Exhibit 4.11

 

Translation

 

SUPPLEMENTARY AGREEMENT NO. 10 TO 
 POLYSILICON SUPPLY AGREEMENT

 

Party A’s Agreement No.: SSC00019

Party B’s Agreement No.: TCZ-A1130-0803-CGC-120-7

 

WHEREAS:

 

I)                                       Jiangsu Zhongneng Polysilicon Technology Development Co., Ltd. (hereinafter referred to as “Zhongneng”) and Changzhou Trina Solar Energy Co., Ltd. (hereinafter referred to as “Trina”) entered into the Polysilicon Supply Agreement (Zhongneng’s Agreement No.: SSC000119, Trina’s Agreement No.: TCZ-A1130-0803-CGC-120-0) on March 29, 2008; the Supplementary Agreement (1) to the Polysilicon Supply Agreement (Trina’s Agreement No.: SSC000119, Trina’s Agreement No.: TCZ-A1130-0803-CGC-120-0, hereinafter referred to as the “Supplementary Agreement (1)”) on August 19, 2008; the Supplementary Agreement (2) to the Polysilicon Supply Agreement (Zhongneng’s Agreement No.: SSC000119, hereinafter referred to as the “Supplementary Agreement (2)”) on August 24, 2008; the Supplementary Agreement (3) to the Polysilicon Supply Agreement (Zhongneng’s Agreement No.: SSC000119, Trina’s Agreement No.: TCZ-A1130-0803-CGC-120-G, hereinafter referred to as the “Supplementary Agreement (3)”) on October 26, 2009; the Supplementary Agreement (4) to the Polysilicon Supply Agreement (Zhongneng’s Agreement No.: SSC000119, Trina’s Agreement No.: TCZ-A1130-0803-CGC-120-0, hereinafter referred to as the “Supplementary Agreement (4)”) on March 26, 2010; and the Memorandum (1) of the Supplementary Agreement (4) to the Polysilicon Supply Agreement (Zhongneng’s Agreement No.: SSC000119, Trina’s Agreement No.: TCZ-A1130-0803-CGC-120-0, hereinafter referred to as the “Memorandum (1)”), the Memorandum (2) of the Supplementary Agreement (4) to the Polysilicon Supply Agreement (Zhongneng’s Agreement No.: SSC000119, Trina’s Agreement No.: TCZ-A1130-0803-CGC-120-2, hereinafter referred to as the “Memorandum (2)”), the Memorandum (3) of the Supplementary Agreement (4) to the Polysilicon Supply Agreement (Zhongneng’s Agreement No.: SSC000119, Trina’s Agreement No.: TCZ-A1130-0803-CGC-120-3, hereinafter referred to as the “Memorandum (3)”) and the Memorandum (4) of the Supplementary Agreement (4) to the Polysilicon Supply Agreement (Zhongneng’s Agreement No.: SSC000119, Trina’s Agreement No.: TCZ-A1130-0803-CGC-120-4, hereinafter referred to as the “Memorandum (4)”) on April 6, 2010, May 14, 2010, August 6, 2010 and August 30, 2010, respectively; and the Supplementary Agreement (5) to the Polysilicon Supply Agreement on September 29, 2010; the Supplementary Agreement (6) to the Polysilicon Supply Agreement on October 4, 2010; the Supplementary Agreement (7) to the Polysilicon Supply Agreement on October 30, 2010; the Supplementary Agreement (8) to the Polysilicon Supply Agreement on December 30, 2010 (all the contracts, agreements and memoranda described above are referred to collectively as the “Original Agreements”).

 

1











 

II)                                  Under Article 2 of the Supplementary Agreement (8), Jiangsu Zhongneng Polysilicon Technology Development Co., Ltd. transferred all of its rights and obligations under the Original Agreements with respect to all silicon wafer businesses (including all sales businesses of solar-grade polycrystalline silicon wafers and solar-grade monocrystalline silicon wafers under the Original Agreements), and designated Changzhou GCL Photovoltaic Technology Co., Ltd. to carry out the sales business of silicon wafters under the Original Agreements and subsequent agreements pursuant to the requirements of the Original Agreements.

 

Changzhou Trina Solar Energy Co., Ltd. and Changzhou GCL Photovoltaic Technology Co., Ltd. have made the following supplements to the Original Agreements and the Supplementary Agreements after they fully negotiated on the basis of the principles of equality and willingness:

 

These Original Agreements and the Supplementary Agreements (hereinafter referred to as “this Agreement”) is made on [December                  ], 2010 in Changzhou, China by and between the following parties (hereinafter the “Parties”):

 

Party A:  Changzhou GCL Photovoltaic Technology Co., Ltd., whose address is at No.1, Xinxi Road, Xinbei District, Changzhou

 

Party B:  Changzhou Trina Solar Energy Co., Ltd., whose address is at No. 2 Tianhe Road, Xinbei District Electronic Industry Park, Changzhou , Jiangsu Province.

 

Article 1                                               Definition

 

Unless otherwise specified herein, the terms used in this Agreement shall have the same meaning as those defined in the Original Agreements:

 

“Silicon Wafers” shall mean and include solar-grade polycrystalline silicon wafers, solar-grade monocrystalline silicon wafers, as well as the solar-grade polycrystalline silicon ingots and monocrystalline silicon rods required for the production of silicon wafers.

 

Article 2                                               Supplementary Requirements

 

2.1                               On the basis of the quantity of supply as agreed in Exhibit (B-3) to the Supplementary Agreement (4) to the Polysilicon Original Agreement and its Supplementary Agreements, Party B confirms that changes need to be done with respect to the quantity of Silicon Wafers to be purchased from Party A starting from (and including) 2011 according to its own production expansion plan (please see Exhibit (C-4) for details), and Party A undertakes that it will supply Silicon Wafers to Party B according to the revised quantity.

 

2.2                               Party B agrees that it will separately accept from Party A Silicon Wafers in the specifications of A grade and 180μm, respectively, on the basis of the specifications of Silicon Wafers as agreed in the Original Agreements and the Supplementary Agreements (please refer to “A-Grade Specification Standards” in Exhibit 2 hereto for the quantity standards of polycrystalline Silicon Wafers, and “180 Specification Standards” in Exhibit 3).

 

2











 

2.3                               The advance payment for Silicon Wafers in 2011 shall be RMB [****]† (in words: Renminbi [****]†).  Party B shall pay to Party A such advance payment by wire transfer in cash no later than June 30, 2011.  The Parties shall separately negotiate the remaining amount of the advance payment.  Before any unanimous agreement is made between the Parties, the non-payment of any outstanding amount since January 1, 2009 shall not be deemed as a breach of contract.

 

2.4                               The Parties undertake that:

 

2.4.1                     the supply of Silicon Wafers shall be continued pursuant to the terms and conditions of the Original Agreements and the Supplementary Agreements.

 

2.4.2                     Party A will satisfy the demand of Party B for Silicon Wafers by way of investment in and construction of additional production and auxiliary facilities for Silicon Wafers.  It will also supply Silicon Wafers to Party B pursuant to the terms and conditions of the Original Agreements and the Supplementary Agreements even if there is shortage of Silicon Wafers in the market.  Save for any reason other than force majeure or any breach of contract by Party B, Party B may require Party A to assume the liabilities for any breach of contract if Party A fails to meet the quantity of supply as agreed in Article 2.1 hereof due to its own fault.

 

2.4.3                     if Party B needs to further purchase any Silicon Wafer other than the quantity of supply as agreed in Article 2.1 above after the execution hereof, Party B shall have the priority right to purchase Silicon Wafers from Party A provided that the same conditions are provided.

 

2.4.4                     Party B undertakes that the quantity of Silicon Wafers purchased from Party A shall not be less than 50% of its total purchases.

 

2.4.5                     Party A undertakes that the average unit price of Silicon Wafer sold to Party B for 2011 shall be less than or equal to Renminbi [****]† a piece (RMB[****]†/pc).

 

2.4.6                     Party A and Party B agree to discuss the price of Silicon Wafers for the second half of 2011 in early May 2011.  If no agreement can be reached in respect thereof, the price mechanism agreed in the Original Agreements and the Supplementary Agreements shall continue to be adopted.

 

2.4.7                     The price adjustment provision of this Supplementary Agreement shall continue to be implemented pursuant to the Supplementary Agreement (4).

 




† This portion of the Supplementary Agreement No. 10 to Polysilicon Supply Agreement has been omitted and filed separately with the Securities and Exchange Commission, pursuant to Rule 24b-2 under the Securities Exchange Act of 1934.

 

3











 

Article 3                                               Miscellaneous

 

3.1                               This Agreement, which is another Supplementary Agreement to the Original Agreements, will only make supplements or changes to those matters stipulated herein.  The other provisions of the Original Agreements and the Supplementary Agreements shall remain to have the original legal effect.  In the event of any conflicts between the Original Agreements, the Supplementary Agreements and this Agreement, the document executed at the later time shall prevail.

 

3.2                               Any matters not covered herein, such as confidentiality, governing law and dispute resolution, shall remain to be dealt with pursuant to the Original Agreements and the Supplementary Agreements.

 

3.3                               This Agreement shall become effective once it is signed by the respective legal representatives or authorized representatives of the Parties.

 

3.4                               This Agreement is executed in four originals with each Party holding two originals.  Each of them shall have the same legal effect.

 

Party A:  Changzhou GCL Photovoltaic Technology Co., Ltd. (Chop)

 

	
Legal   representative or authorized representative (Signature):
    	
 
    


 

[Chop of Changzhou GCL Photovoltaic Technology Co., Ltd. is affixed]

 

/s/                                   January 11, 2011

 

Party B:  Changzhou Trina Solar Energy Co., Ltd. (Chop)

 

	
Legal   representative or authorized representative (Signature):
    	
 
    


 

[Chop of Changzhou Trina Solar Energy Co., Ltd. is affixed]

 

/s/                                   January 11, 2011

 

4











 

	
Exhibit 1
    	
 
    	
List of the Supplementary Agreements
    
	
 
    	
 
    	
 
    
	
1.
    	
 
    	
Supplementary   Agreement (1) to the Polysilicon Original Agreement and the   Supplementary Agreements signed on August 19, 2008
    
	
2.
    	
 
    	
Supplementary   Agreement (2) to the Polysilicon Original Agreement and the Supplementary   Agreements signed on August 24, 2009
    
	
3.
    	
 
    	
Supplementary   Agreement (3) to the Polysilicon Original Agreement and the Supplementary   Agreements signed on October 26, 2009
    
	
4.
    	
 
    	
Supplementary   Agreement (4) to the Polysilicon Original Agreement and the   Supplementary Agreements signed on March 29, 2010
    
	
5.
    	
 
    	
Memorandum   (1) of the Supplementary Agreement (4) to the Polysilicon Supply   Agreement signed on April 6, 2010
    
	
6.
    	
 
    	
Memorandum (2) of   the Supplementary Agreement (4) to the Polysilicon Supply Agreement   signed on May 14, 2010
    
	
7.
    	
 
    	
Memorandum   (3) of the Supplementary Agreement (4) to the Polysilicon Supply   Agreement signed on August 6, 2010
    
	
8.
    	
 
    	
Memorandum   (4) of the Supplementary Agreement (4) to the Polysilicon Supply   Agreement signed on August 30, 2010
    
	
9.
    	
 
    	
Supplementary   Agreement (5) to the Polysilicon Supply Agreement signed on   September 29, 2010
    
	
10.
    	
 
    	
Supplementary   Agreement (6) to the Polysilicon Supply Agreement signed on   October 14, 2010
    
	
11.
    	
 
    	
Supplementary   Agreement (7) to the Polysilicon Supply Agreement signed on   October 30, 2010
    
	
12.
    	
 
    	
Supplementary   Agreement (8) to the Polysilicon Supply Agreement signed on   December 30, 2010
    


 

5




 









 

Exhibit 2: “A-Grade Specification Standards”

 

	
[Logo] GCL 
    	
Product   Specifications
    	
Product   Name
    	
156 x 156   Polycrystalline
   Silicon Wafers
    
	
 
    	
Document   Name
    	
Product   Specification
   Standards for A-Grade
   Polycrystalline Silicon Wafers
    
	
 
    	
Geometry
    	
TTV, Warpage
    	
Saw Mark
    	
Edge Chip
    
	
Materials   properties
    	
 
    
	
Growth   method
    	
DSS
    
	
Donor   type/Dopant
    	
P/Boron
    
	
Oxygen   content
    	
<1.0 x 1018 atoms/cm3
    
	
Carbon   content
    	
<8.0 x 1017 atoms/cm3
    
	
Electrical   properties
    	
 
    
	
Resistivity
    	
0.8 ~ 3 Ω.cm
    
	
Lifetime
    	
>2 μs (silicon chunks)
    
	
Geometry
    	
 
    
	
Width
    	
156 ± 0.5 mm
    	
 
    	
156 ± 0.5   mm
    	
 
    
	
Squareness
    	
90 ± 0.3°
    
	
Diameter
    	
219.2 ± 0.6   mm
    	
 
    	
219.2 ± 0.5   mm
    	
 
    
	
Thickness
    	
180 ± 20 μm,   190 ± 20 μm, 200 ± 20 μm,
    
	
TTV
    	
<40μm
    	
<50μm
    	
<40μm
    	
<40μm
    
	
Saw marks
    	
<25μm
    	
<25μm
    	
<30μm (no color difference)
    	
<25μm
    
	
Edge chip
    	
Width <0.3   mm, length <0.5 mm; Max. 2 /piece; V-shape chip unacceptable
    	
0.3 mm<   width<0.5 mm, 0.5 mm< length<1 mm; Max 2/piece;   V-shape chip unacceptable 
    
	
Warpage
    	
<75μm
    	
<100μm
    	
<75μm
    	
<75μm
    
	
Microcrystal
    	
Single area   < 3 x 3 mm2; total area < 3 x 3 cm2
    
	
Crack, hole
    	
None
    
	
Surface   quality
    	
No damages   on the surface, no stains, no watermark, no spot 
    
	
Package &   Labels
    	
 
    	
 
    	
 
    	
 
    
	
Package
    	
GCL   standard package, 100 pcs/package, 300 pcs/box, chip rate during   transportation < 3%  
    
	
Labels
    	
P.O. No.,   Lot No., No. of wafers, Dimension, etc.
    
							


 

6











 

Exhibit 3: “Specification Standards for Polycrystalline Silicon Wafers”

 

	
Trinasolar
    
	
Changzhou Trina Solar   Energy Co., Ltd.
    
	
 
    	
Product   Name
    	
Multi-Crystalline   Si Wafer
    
	
 
    	
Document   Name
    	
156*156   Multi-Crystalline Wafer
   Specification
    
	
Product Specifications
    	
Document   Number
    	
PS-WX-W-0004
    
	
 
    	
Version   Number
    	
A
    
	
Material properties
    	
 
    	
 
    
	
Property
    	
Specification
    	
Referenced Standard
    	
Random
   Checking
   Proposal
    
	
Crystal Growth Method
    	
DSS
    	
 
    	
 
    
	
Donor Type/Dopant
    	
P/Boron
    	
ASTM F42
    	
 
    
	
Oxygen Content
    	
< 1 x 1018 atoms/cm3 (head   of silicon robs) or pursuant to the specifications of raw materials supplied
    	
ASTM 
   F1188/GB1557-1989
    	
AQL=0.25
    
	
Carbon Content
    	
< 5.0 x 1017 atoms/cm3 (tail   of silicon robs) or pursuant to the specifications of raw materials supplied
    	
ASTM
   F1391/GB1558-1997
    	
 
    
	
Electrical properties
    	
 
    	
 
    	
 
    
	
Resistivity
    	
0.5 – 3   ohm-cm
    	
ASTM F43
    	
 
    
	
Lifetime
    	
>1.0μs, or pursuant to the specifications   of raw materials supplied (inspected and tested by sorting machine)
    	
GB1553-1997
    	
AQL=0.25
    
	
Geometry
    
	
Geometry

 
    	
Square
    	
 
    	
 
    
	
Dimensions (WxW)
    	
156.0 x   156.0 (±0.5) mm
    	
 
    	
 
    
	
Right Angle
    	
90 ± 0.3°
    	
 
    	
 
    
	
 
    	
1)   Hypotenuse 0.5 – 2.0 mm (reference)
    	
 
    	
 
    
	
Chamfer Size
    	
2) Cahtetus   0.35 – 1.42 mm (reference)
    	
 
    	
 
    
	
 
    	
3) Chamfer   angle 45° (reference)
    	
 
    	
 
    
	
Thickness
    	
180/190/200μm   (average value), specification ± 20μm, or pursuant to the specifications of   raw materials supplied 
    	    
ASTM
   F533/GB6618-1995
    

Q/320411   AFY03-2006
    	
 
    
	
Blade wafer
    	
Not   acceptable (a blade wafer is called if the thickness of its edge at 2 mm   exceeds the requirement)
    	
 
    	
 
    
	
TTV
    	
< 40μm
    	
ASTM F533,
   F657/GB6618-
    	
 
    
	
Saw marks
    	
1) Depth <   20μm (the difference between the highest and lowest points of Rt);
    	
 
    	
AQL=1.0
    
	
 
    	
2) Saw   marks of no color difference and saw marks on the edge;
    	
 
    	
 
    
	
Surface quality
    	
Cleaned, no   grease stains, inclusion or pin hole
    	
 
    	
 
    
	
 
    	
1) Width of   edge chip < 0.5 mm, length < 1.0 mm; quantity <   2;
    	
 
    	
 
    
	
Edge Chip
    	
2) No   V-shape chip, crack and corner missing; width < 0.5 mm, length <   1.0 mm; count < 2;
    	
 
    	
 
    
	
Surface Chip
    	
Depth <   0.5 mm, length < 3.0 mm
    	
 
    	
 
    
	
Warpage
    	
< 75μm
    	
ASTM
   F657/GB6619 or 
    	
 
    
					


 

7











 

	
 
    	
 
    	
6620-
    	
 
    
	
 
    	
 
    	
1995;          Q/320411
   AFY03-2006
    	
 
    
	
Microcrystal
    	
Single area   < 3*3 mm2, total area < 3*3 cm2
    	
 
    	
 
    
	
Package &   Labels
    	
 
    	
 
    	
 
    
	
Package
    	
Trina   Standard, 100 pcs/package;
    	
 
    	
 
    
	
Labels
    	
Part No.,   P.O. No., Lot No., No of wafers, Dimension
    	
 
    
	
Additional   Note: In the event of any discrepancy between all the product specifications   and the agreement, the agreement shall prevail.
    
	
Originator
    	
Review
    	
Approval
    
	
Signature:
    	
Date:
    	
Signature:
    	
Date:
    	
Signature:
    	
Date:
    
	
Notes: 1.   Defective rate < 0.3%; 2. Trial production of 2,000 pcs per batch,   defective rate of electric property of battery < 0.5%.  page 1/1
    
								


 

8













 

Exhibit (C-4)

 

Production Expansion Plan

 

	
2011
    	
 
    	
Jan
    	
 
    	
Feb
    	
 
    	
Mar
    	
 
    	
Apr
    	
 
    	
May
    	
 
    	
Jun
    	
 
    	
Jul
    	
 
    	
Aug
    	
 
    	
Sept
    	
 
    	
Oct
    	
 
    	
Nov
    	
 
    	
Dec
    	
 
    	
Sub-
   Total
    	
 
    
	
Polycrystalline Silicon Wafers (Ten Thousand Pieces)
    	
 
    	
850
    	
 
    	
800
    	
 
    	
850
    	
 
    	
900
    	
 
    	
900
    	
 
    	
1,080
    	
 
    	
1,440
    	
 
    	
1,440
    	
 
    	
1,440
    	
 
    	
1,530
    	
 
    	
1,530
    	
 
    	
1,530
    	
 
    	
14,290
    	
 
    
	
Unit Price (Yuan/Piece)
    	
 
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
 
    	
 
    
	
A- Polycrystalline Silicon Wafers (Ten Thousand Pieces)
    	
 
    	
150
    	
 
    	
100
    	
 
    	
150
    	
 
    	
100
    	
 
    	
100
    	
 
    	
120
    	
 
    	
160
    	
 
    	
160
    	
 
    	
160
    	
 
    	
170
    	
 
    	
170
    	
 
    	
170
    	
 
    	
1,710
    	
 
    
	
Unit Price (Yuan/Piece)
    	
 
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
The price   for Q2 will be negotiated in mid- March
    	
 
    	
The price   for the second half of 2011 will be negotiated in mid-May
    	
 
    
	
Quantity (MW)
    	
 
    	
39.2
    	
 
    	
35.28
    	
 
    	
39.2
    	
 
    	
39.2
    	
 
    	
39.2
    	
 
    	
47.04
    	
 
    	
62.72
    	
 
    	
62.72
    	
 
    	
62.72
    	
 
    	
66.64
    	
 
    	
66.64
    	
 
    	
66.64
    	
 
    	
627.2
    	
 
    
	
Total (Ten Thousand Pieces)
    	
 
    	
1,000
    	
 
    	
900
    	
 
    	
1,000
    	
 
    	
1,000
    	
 
    	
1,000
    	
 
    	
1,200
    	
 
    	
1,600
    	
 
    	
1,600
    	
 
    	
1,600
    	
 
    	
1,700
    	
 
    	
1,700
    	
 
    	
1,700
    	
 
    	
16,000
    	
 
    
	
Total (Ten Thousand Yuan)
    	
 
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
N/A
    	
 
    


 




†     This portion of the Supplementary Agreement No. 10 to Polysilicon Supply Agreement has been omitted and filed separately with the Securities and Exchange Commission, pursuant to Rule 24b-2 under the Securities Exchange Act of 1934.

 

9













 

Revised Quantity and Price for Purchase from 2011 to 2015

 

	
Year
    	
 
    	
2011
    	
 
    	
2012
    	
 
    	
2013
    	
 
    	
2014
    	
 
    	
2015
    	
 
    	
Total
    	
 
    
	
Quantity of Polycrystalline Silicon Wafers (MW)
    	
 
    	
627
    	
 
    	
980
    	
 
    	
1,470
    	
 
    	
1,960
    	
 
    	
2,450
    	
 
    	
7,487
    	
 
    
	
Quantity of Polycrystalline Silicon Wafers (Ten Thousand Pieces)
    	
 
    	
16,000
    	
 
    	
25,000
    	
 
    	
37,500
    	
 
    	
50,000
    	
 
    	
62,500
    	
 
    	
191,000
    	
 
    
	
Unit (Yuan/Piece)
    	
 
    	
[****]†
    	
 
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
 
    	
 
    
	
Total Amount (Ten Thousand Yuan)
    	
 
    	
To be   confirmed after the negotiation of price in March and May 2011
    	
 
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
 
    	
 
    


 

Plan for Additional Supply from 2016 to 2020

 

	
Year
    	
 
    	
2016
    	
 
    	
2017
    	
 
    	
2018
    	
 
    	
2019
    	
 
    	
2020
    	
 
    	
Total
    	
 
    
	
Quantity of Polycrystalline Silicon Wafers (MW)
    	
 
    	
2,450
    	
 
    	
2, 450
    	
 
    	
2,450
    	
 
    	
2, 450
    	
 
    	
2,450
    	
 
    	
12,250
    	
 
    
	
Quantity of Polycrystalline Silicon Wafers (Ten Thousand Pieces)
    	
 
    	
62,500
    	
 
    	
62,500
    	
 
    	
62,500
    	
 
    	
62,500
    	
 
    	
62,500
    	
 
    	
312,500
    	
 
    
	
Unit (Yuan/Piece)
    	
 
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
 
    	
 
    
	
Total Amount (Ten Thousand Yuan)
    	
 
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    	
[****
    	
]†
    


 




†     This portion of the Supplementary Agreement No. 10 to Polysilicon Supply Agreement has been omitted and filed separately with the Securities and Exchange Commission, pursuant to Rule 24b-2 under the Securities Exchange Act of 1934.

 

10