# Patent

## Title
Touch sensor mechanism and manufacturing method thereof

## Abstract

A touch sensor mechanism for a touch display device, includes a cover lens made by a transparent material having a dielectric constant greater than 4.5 and a compression strength greater than 700 MPa for generating a finger's touching capacitance (CF) while a user's finger of a user touch thereon; and a sensor device module including a plurality of sensor devices having a sensor parasitic capacitance (CP). The cover lens and the sensor device module are disposed in the touch display device in such a manner that a ratio of a standard deviation value (σU) of the finger's touching capacitance (CF) of the cover lens to the sensor parasitic capacitance (CP) of the sensor device module is a signal-to-noise ratio (SNR). The SNR is adjusted along with the finger's touching capacitance (CF) by reducing the thickness of the cover lens.

## Background
CROSS-REFERENCES TO RELATED APPLICATIONS
This application claims the priority of Taiwanese patent application No. 101146179, filed on Dec. 7, 2012, which is incorporated herewith by reference.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention generally relates to a touch sensor mechanism and the manufacturing method thereof, more specifically to a touch sensor mechanism and the manufacturing method thereof applied in a touch display device, in which, a transparent material with higher dielectric constant and mechanic strength is implemented as a cover lens for touching thereon. The thickness of the cover lens can be reduced in order to enhance the signal-to-noise ratio (SNR).
2. The Prior Arts
Well-known technology of capacitive touch device using touch sensors has already been applied in touch electronic devices/products for years. In general, a solution in transitional capacitive touch sensors uses a cover lens with thickness less than 3 mm. In other words, the touch signal sensing is difficult or distorted due to the thick glass and it results in the judgment mistakes of the touch electronic devices/products. Therefore, reducing the thickness of the cover lens is necessary. However, reducing the thickness of the cover lens also reduces the mechanic strength of the touch electronic devices/products.
In general, capacitance is calculated by the formula C=(∈r∈0*A)/d, wherein ∈r is dielectric constant, ∈0 is free space permittivity, A is area of finger and sensor pad overlap, and d is distance between conducting materials. Therefore, the higher of dielectric constant of the cover lens, the higher of finger's touching capacitance CF. As the calculation of formula, the lower the thickness of the cover lens, the higher the finger's touching capacitance CF. Therefore, lower thicknesses and higher mechanic strength of material are required. In the view point of crosstalk noise from a sensor device to another sensor device, the lower thickness is better for reducing the transmitting distance, and the higher dielectric constant of cover lens, the longer distance between the sensor devices, and the lower current of driving circuit are better for preventing the interaction from the electromagnetic field.
In the touch display device, the signal-to-noise ratio (SNR) is measured according to the count value at the output terminal of sensors. For example, when the finger does not touch the sensors, the unpressed average value is μU, and unpressed standard deviation value is σU; when the finger touches the sensors, the pressed average value is μP, and pressed standard deviation value is σP, in general, the signal-to-noise ratio (SNR) is (μU−μP)/σU. According to the touch sensing theory, CTotal=CF+CP, wherein, CTotal is the total capacitance and CP is a sensor parasitic capacitance which is the capacitance of sensor device itself, and CF is capacitance generated by the finger touching, also called finger's touching capacitance. Signal-to-noise ratio (SNR) is related to the ratio of (CTotal−CP)/CP, that is (CF/CP), and signal-to-noise ratio (SNR) is better in a suitable value, such that the sensitivity will not too high or too low. Therefore, the higher tolerance of crosstalk noise is requested in design specification, the finger's touching capacitance CF related to signal-to-noise ratio (SNR) should be higher.
Recently, because Apple Inc. uses projection-typed capacitive touch devices in their products, projection-typed capacitive touch devices become popular due to advantages of simple structure, high reliability, long lifetime, acceptable sensitivity, acceptable precision, acceptable light transmittance, and multi-touch implementation.
However, this touch sensor technology is not perfect. For example, the capacitance of this touch sensor technology is easily influenced by the electromagnetic field effect of the circuit and the effective size of touch panel using this technology is limited to a mid-small size which is equal to or smaller than 17 inches. Larger size (17 ̃30 inches) of the touch panel using this technology is only in the experiment or test stages. Many companies are developing and improving the technology for increasing the applicable range of projection-typed capacitive touch displays.
Furthermore, the touch sensor technology is developing from one glass solution/touch on lens (OGS/TOL) to on-cell, on-cell/in-cell hybrid and in-cell, and it will increase the distance between sensor and cover lens, and would cause the assembly/attaching gap such that the finger's touching capacitance CF is decreased and the touch sensitivity is reduced. Moreover, the larger size and the higher density of sensor will cause the much serious influence by the electromagnetic effect.
Therefore, it is necessary to develop a touch sensor technology applied in a touch display device, which can eliminate the problems such as reducing the thickness of the cover lens (for example, the thickness lower than 1 mm) without affecting the mechanic strength of touch electronic devices/products due to the higher mechanic strength (for example, the compressive strength higher than 700 MPa) of cover lens; and reducing the thickness of the cover lens which can increase the finger's touching capacitance CF and the signal-to-noise ratio (SNR) related to the ratio CF/CP for real applications in order to eliminate the problem of reducing touch sensitivity by using the cover lens with higher dielectric constant (for example, the dielectric constant higher than 4.5), such that the tolerance of noise caused by crosstalk can be improved by increasing the finger's touching capacitance CF and serious electromagnetic effect due to the large size touch panel of a touch display device can be also eliminated.
SUMMARY OF THE INVENTION
An objective of the present invention is to provide a touch sensor mechanism and the manufacturing method thereof applied in a touch display device, which uses a transparent material with high (>4.5) dielectric constant and high (>700 MPa) mechanic strength as a cover lens which can reduce the thickness. With the higher dielectric constant, and the finger's touching capacitance (CF) the signal-to-noise ratio (SNR) can be adjusted to a suitable value to prevent the sensitivity from being too high or too low, and the problem of sensitivity could be solved.
Another objective of the present invention is to provide a touch sensor mechanism and the manufacturing method thereof applied in a touch display device. Since the finger's touching capacitance (CF) can be greatly improved, the signal-to-noise ratio (SNR) is also improved. The tolerance of noise caused by crosstalk between sensor to sensor could be increased and serious electromagnetic interaction due to the large size touch panel of a touch display device can be also solved to provide more tolerance in circuit design.
According the objectives above, the touch sensor mechanism of the present invention includes a cover lens and a sensor device module, and the touch sensor mechanism is applied in a touch display device, such as out-cell LCD touch display device, in-cell LCD touch display device, on-cell LCD touch display device, in-cell/on-cell hybrid LCD touch display device, out-cell OLED touch display device, on-cell OLED touch display device, and in-cell OLED touch display device.
Regarding the cover lens, the cover lens is a transparent material with a high dielectric constant (>4.5) and high mechanic strength (>700 MPa) for touch. The finger's touching capacitance (CF) is greatly improved by reducing the thickness and increasing the dielectric constant, such that the signal-to-noise ratio (SNR) can also be improved. The signal-to-noise ratio (SNR) can be adjusted to a suitable value to prevent the sensitivity from being too high or too low, and the tolerance of crosstalk noise between sensor to sensor can be improved and serious electromagnetic effect due to the large size touch panel of touch display device can be also eliminated to provide more tolerance in circuit design.
Herein, sapphire (Al2O3) in varied axis (such as a-axis, c-axis, m-axis, and r-axis) is selected as the material of cover lens. The compression strength in each axis of sapphire is higher than 2000 MPa, and the dielectric constant (∈r) is 11.5 in a-axis, 9.3 in c-axis and 11.5 in m-axis. Since sapphire in varied axis can be applied, and sapphire can be a single crystal in one of a-axis, c-axis, m-axis, and r-axis, wherein the crystal direction in c-axis is (0001); crystal direction in a-axis includes (1 210), (11 20), (2 110), ( 1120), ( 2110) and ( 12 10); crystal direction in m-axis includes ( 1010), ( 1100), (01 10), (10 10), (1 100), and (0 110); and crystal direction in r-axis includes (10 11), ( 101 1), (01 11), (0 111), (1 10 1) and ( 1101). The material of cover lens is also an aluminum oxynitride glass (Al(64+x)/3O(32-x)Nx, 2.75≦x≦5) with compression strength higher than 2677 MPa and the dielectric constant (∈r) 9.19. The material is selected according to the real condition.
In the touch display device, the signal-to-noise ratio (SNR) is measured according to the count value at the output terminal of sensors. For example, when the finger does not touch the sensors, the unpressed average value is μU, and unpressed standard deviation value is μU; when the finger touches the sensor, the pressed average value is μP, and pressed standard deviation value is μP, in general, the signal-to-noise ratio (SNR) is (μU−μP)/σU.
Reducing the thickness of cover lens and increasing the dielectric constant of cover lens, the finger's touching capacitance (CF) can be greatly increased to increase the ratio of (CTotal−CP)/CP, that is (CF/CP), such that the signal-to-noise ratio (SNR) can be adjusted to satisfy the real applied request real requirement, wherein CTotal=CF+CP, CF is finger's touching capacitance, and CP is the sensor parasitic capacitance of sensor device. Take well-known out-cell touch device which has a cover lens with a thickness of 0.7 mm and a dielectric constant 4.5 as an example, if the cover lens is replaced by a c-axis sapphire glass, the thickness could be reduced to 0.245 mm under touch in same compression strength, and the finger's touching capacitance CF becomes 5.9 times, and if the cover lens is replaced by an a-axis or m-axis sapphire glass, the thickness could be reduced to 0.245 mm under touch in same compression strength, and the finger's touching capacitance CF becomes 7.3 times, and moreover, if the cover lens is replaced by an aluminum oxynitride glass, the thickness could be reduced to 0.183 mm under touch in same compression strength, and the finger's touching capacitance CF becomes 7.81 times.
Regarding the sensor device module, the sensor device module has at least two sensor devices. In the view point of tolerance of crosstalk noise of sensor to sensor between any two sensor devices, the lower thickness is better for reducing the transmitting distance, the higher dielectric constant of cover lens, the longer distance between sensor devices, and the lower current of driving circuit are better for preventing the interaction from the electromagnetic effect.
Moreover, the sensor device module at least includes a first electrode layer of y-axis circuit net, an insulated layer and a second electrode layer of an x-axis circuit net in some embodiments, wherein the first electrode layer is a sensing circuit, and the second electrode layer is a driving circuit. It is only one implementation type, and the function of x-axis and y-axis circuit nets can be exchanged. In the other embodiments, sensor device module is combined with the liquid crystal module and disposed in the liquid crystal module to form an in-cell type. The implementation types are selected to satisfy the real application.
The process of the manufacturing method of the touch sensor mechanism includes preparing a touch display device having the sensor device module firstly, and covering a cover lens of the touch sensor mechanism on the top of the touch display device after finishing the process for manufacturing the touch display device.
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.



BRIEF DESCRIPTION OF THE DRAWINGS
The present invention can be understood in more detail by reading the subsequent detailed description in conjunction with the examples and references made to the accompanying drawings, wherein:
FIG. 1 is a schematic drawing for illustrating the structure and operation of die touch sensor mechanism of the present invention;
FIG. 2 is a flow chart illustrating the steps of the manufacturing method of touch sensor mechanism as the embodiment shown in FIG. 1;
FIG. 3 is a schematic drawing illustrating the structure and operation of an embodiment of the touch sensor mechanism of the present invention;
FIG. 4 is a flow chart illustrating the steps of the manufacturing method of touch sensor mechanism as the embodiment shown in FIG. 3;
FIG. 5 is a flow chart illustrating the detail steps of preparing a touch display module having the sensor device module of the manufacturing method the touch sensor mechanism shown in FIG. 4;
FIG. 6 is a flow chart illustrating the detail steps of covering a cover lens on the touch display module in the manufacturing method for the touch sensor mechanism shown in FIG. 4;
FIG. 7 is a schematic drawing illustrating the structure and operation of another embodiment of the touch sensor mechanism of the present invention;
FIG. 8 is a flow chart illustrating the steps of the manufacturing method of touch sensor mechanism as the embodiment shown in FIG. 7;
FIG. 9 is a flow chart illustrating the detail steps of preparing a touch display module having the sensor device module in the manufacturing method for the touch sensor mechanism shown in FIG. 8;
FIG. 10 is a flow chart illustrating the detail steps of covering a cover lens on the touch display module in the manufacturing method of the touch sensor mechanism shown in FIG. 8;
FIG. 11 is a schematic drawing illustrating the structure and operation of yet another embodiment of the touch sensor mechanism of the present invention;
FIG. 12 is a flow chart illustrating the steps of the manufacturing method of the touch sensor mechanism as the embodiment shown in FIG. 11;
FIG. 13 is a flow chart illustrating the detail steps of forming sensor device module of the manufacturing method in the touch sensor mechanism shown in FIG. 12;
FIG. 14 is a flow chart illustrating the detail steps of forming the sensor device module of the manufacturing method the touch sensor mechanism shown in FIG. 12;
FIG. 15 is a schematic drawing illustrating the structure and operation of yet another embodiment of touch sensor mechanism of the present invention;
FIG. 16 is a flow chart illustrating the steps of the manufacturing method of touch sensor mechanism as the embodiment shown in FIG. 15;
FIG. 17 is a flow chart illustrating the detail steps of forming a sensor device module of the manufacturing method of touch sensor mechanism shown in FIG. 16;
FIG. 18 is a flow chart illustrating the detail steps of performing the assembly operation to manufacture the touch display device of the manufacturing method the touch sensor mechanism.
FIG. 19 is a schematic drawing for illustrating the structure and operation of further another embodiment of touch sensor mechanism of the present invention;
FIG. 20 is a flow chart illustrating the steps of the manufacturing method of touch sensor mechanism as the embodiment shown in FIG. 19;
FIG. 21 is a flow chart illustrating the detail steps of forming a sensor device module of the manufacturing method of touch sensor mechanism shown in FIG. 20; and
FIG. 22 is a flow chart illustrating the detail steps of performing the assembly operation to manufacture the touch display device of the manufacturing method the touch sensor mechanism shown in FIG. 20.



DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
FIG. 1 is a schematic drawing for illustrating the structure and operation of the touch sensor mechanism of the present invention. As shown in FIG. 1, the touch sensor mechanism 1 of the present invention includes a cover lens 2 and a sensor device module 3. Herein, the touch sensor mechanism 1 can be applied in a touch display device, such as an out-cell LCD touch display device, in-cell LCD touch display device, on-cell LCD touch display device, in-cell/on-cell hybrid LCD touch display device, out-cell OLED touch display device, on-cell OLED touch display device, and in-cell OLED touch display device depending on the real application request.
Regarding the cover lens 2, the cover lens 2 is a transparent material with a reduced thickness, a high dielectric constant (>4.5) and a high mechanic strength (>700 MPa) for touch. The finger's touching capacitance (CF) can be greatly improved by reducing the thickness and increasing the dielectric constant, and the ratio (CF/CP) of the finger's touching capacitance (CF) to the sensor parasitic capacitance of sensor device (CP) of the sensor device module 3 is also greatly improved. Therefore, the signal-to-noise ratio (SNR) can be adjusted to a suitable value to prevent the sensitivity from being too high or too low. The tolerance of crosstalk noise between sensors of the sensor device module 3 can be improved, and serious electromagnetic interaction due to the large size touch display device can be eliminated to provide more tolerance in circuit design.
Herein, sapphire (Al2O3) in varied axis (such as a-axis, c-axis, m-axis, and r-axis) is selected as the material of cover lens. The compression strength in each axis of sapphire is higher than 2000 MPa, and the dielectric constant (∈r) is 11.5 in a-axis, 9.3 in c-axis and 11.5 in m-axis. Since sapphire in varied axis can be applied and sapphire can be a single crystal in one of a-axis, c-axis, m-axis, and r-axis. An aluminum oxynitride glass (Al(64+x)/3O(32-x)Nx, 2.75≦x≦5) can also be selected as the material of cover lens, the aluminum oxynitride glass has a compression strength higher than 2677 MPa and the dielectric constant (∈r) 9.19. The material is selected according to the real condition.
By reducing the thickness of cover lens and increasing the dielectric constant of cover lens, the finger's touching capacitance (CF) can be greatly increased, and the signal-to-noise ratio (SNR) can be also improved. Take well-known out-cell touch device which has a cover lens with a thickness of 0.7 mm and a dielectric constant 4.5 as an example, if the cover lens is replaced by a c-axis sapphire glass, the thickness could be reduced to 0.245 mm under touch in same compression strength, and the finger's touching capacitance CF becomes 5.9 times, and if the cover lens is replaced by an a-axis or m-axis sapphire glass, the thickness could be reduced to 0.245 mm under touch in same compression strength, and the finger's touching capacitance CF becomes 7.3 times, and moreover, if the cover lens is replaced by an aluminum oxynitride glass, the thickness could be reduced to 0.183 mm under touch in same compression strength, and the finger's touching capacitance CF becomes 7.81 times.
Regarding the sensor device module 3, the sensor device module 3 has at least two sensor devices. In the view point of tolerance of crosstalk noise between any two sensor devices, it is desirable to have lower thickness of the cover lens 2 to reduce the capacitance transmitting distance, and higher dielectric constant of the cover lens 2, larger distance between sensor devices, and lower current for driving circuit to reduce the interaction of electromagnetic effect.
Moreover, the sensor device module 3 at least includes a first electrode layer of a y-axis circuit net, an insulated layer and a second electrode layer of an x-axis circuit net in some embodiments, wherein the first electrode layer, the insulated layer and the second electrode layer consist of a sensor device. In the other embodiments, sensor device module 3 is combined with the liquid crystal module and disposed in the liquid crystal module to form an in-cell type. The implementation types are selected to satisfy the real application.
FIG. 2 is a flow chart illustrating the steps of the manufacturing method of touch sensor mechanism as the embodiment shown in FIG. 1. As shown in FIG. 2, firstly, the method includes forming a sensor device module 3 in step 11, herein the steps 11 can be preparing a touch display device having the sensor device module 3 of the touch sensor mechanism 1 or forming the sensor device module 3 on the cover lens 2. The implementation types are selected to satisfy the real application. Then, the method enters the step 12.
In the step 12, the manufacturing method includes performing the assembly operation to manufacture the touch display device having touch function, wherein the step 12 can be covering the cover lens 2 of the touch sensor mechanism 1 on the top of touch display module to form a touch display device having the cover lens and having touch function after finishing the processes of the touch display module in sequence, or combining a structure having the cover lens 2 and the sensor device module 3 with the touch display module to form a touch display device having touch function. The implementation types are selected to satisfy the real application.
FIG. 3 is a schematic drawing illustrating the structure and operation of an embodiment of the touch sensor mechanism of the present invention. As shown in FIG. 3, the touch sensor mechanism 1 of the present invention includes a cover lens 2 and a sensor device module 3. Herein, the touch sensor mechanism 1 can be applied in an out-cell LCD touch display device 4, wherein the out-cell LCD touch display device 4 includes the cover lens 2, a decoration 102, the sensor device module 3, a top polarizer 106, a color filter glass 107, a color filter module 108, a liquid crystal module 109, a thin film transistor (TFT) 110, and a thin film transistor array glass 111. The total thickness d of the cover lens 2, the decoration 102, and the sensor device module 3 is 0.7 mm. The top polarizer 106, the color filter glass 107, the color filter module 108, the liquid crystal module 109, the thin film transistor (TFT) 110, and the thin film transistor array glass 111 consist of form the touch display module 401, and the cover lens 2, the decoration 102, and the sensor device module 3 form a structure 30.
Regarding the cover lens 2, the cover lens 2 is a transparent material with a reduced thickness, a high dielectric constant (>4.5) and a high mechanic strength (>700 MPa) for touch. The finger's touching capacitance (CF) can be greatly improved by reducing the thickness and increasing dielectric constant, and ratio (CF/CP) of the finger's touching capacitance (CF) to the sensor parasitic capacitance of sensor device (CP) of the sensor device module 3 is also greatly improved. Therefore, the signal-to-noise ratio (SNR) can be adjusted to a suitable value to prevent the sensitivity from being too high or too low. Because of the increasing of the finger's touching capacitance (CF), the tolerance of crosstalk noise between sensors of the sensor device module 3 can be improved, and serious electromagnetic interaction due to the large size touch display device 4 can be eliminated to provide more tolerance in capacitance device design.
According to the prior art, the compression strength of general reinforced glass is 700 MPa, the dielectric constant ∈r of the general reinforced glass is 4.5, and the thickness of the general reinforced glass is 0.7 mm. The signal-to-noise ratio (SNR) is (μU−μP)/σU, wherein (μU−μP) is 135, σU is 27, so the signal-to-noise ratio (SNR)=(135/27)=5. However, sapphire (Al2O3) in varied axis (such as a-axis, c-axis, m-axis, and r-axis) can be selected as the material of the cover lens 2 in this embodiment. Herein, for example, the material of cover lens 2 is sapphire in c-axis, the compression strength ≧2000 MPa, and the dielectric constant ∈r is 9.3, under a condition of the same compression strength requirement with Chemically Strengthened Glass, the thickness can reduce to 0.35 d (0.245 mm). The signal-to-noise ratio (SNR) is (μU−μP)/σU, wherein (μU−μP)=135×(11.5/4.5)×(0.7/0.245)=797 and σU=27, such that the signal-to-noise ratio (SNR) is (797/27)=29.5, which is much greater than signal-to-noise ratio in prior art (SNR=5). For another example, the material of cover lens 2 is sapphire in a-axis, the compression strength ≧2000 MPa, and the dielectric constant ∈r is 11.5, under a condition of the same compression strength requirement with Chemically Strengthened Glass, the thickness can reduce to 0.35 d. The signal-to-noise ratio (SNR) is (μU−μP)/σU, wherein (μU−μP)=985.7, and σU=27, such that the signal-to-noise ratio (SNR) is (985.7/27)=36.5, which is much greater than signal-to-noise ratio in prior art (SNR=5).
Since sapphire in varied axis can be applied, sapphire can be a single crystal in one of a-axis, c-axis, m-axis, and r-axis, wherein the crystal direction in c-axis is (0001); crystal direction in a-axis includes (1 210), (11 20), (2 110), ( 1120), ( 2110) and ( 12 10); crystal direction in m-axis includes ( 1010), ( 1100), (01 10), (10 10), (1 100), and (0 110); and crystal direction in r-axis includes (10 11), ( 101 1), (01 11), (0 111), (1 10 1) and ( 1101).
In addition, the material of cover lens can be an aluminum oxynitride glass (Al(64+x)/3O(32-x)Nx, 2.75≦x≦5) with compression strength higher than 2677 MPa and the dielectric constant (∈r) 9.19, under a condition of the same compression strength requirement with Chemically Strengthened Glass, the thickness can reduce to 0.262 d (0.183 mm). In other words, the signal-to-noise ratio (SNR) is (μU−μP)/σU, wherein (μU−μP)=1052.3, and σU=27, such that the signal-to-noise ratio (SNR) is (1052.3/27)=39, which is greatly much greater than signal-to-noise ratio in prior art (SNR=5).
Regarding the sensor device module 3, the sensor device module 3 at least includes a first sensor layer 31 of a y-axis sensor circuit net 301, an insulated layer 32 and a second sensor layer 33 of an x-axis sensor circuit net 302, such that the sensor device module 3 includes at least two sensor devices. In the view point of tolerance of crosstalk noise between any two sensor devices, it is desirable to have lower thickness of the cover lens 2, higher dielectric constant of the cover lens 2, larger distance between sensor devices, and lower current for driving circuit.
Herein, although the touch sensor mechanism 1 of this embodiment is applied in the out-cell LCD touch display device 4, the operation principle of the out-cell LCD touch display device and out-cell OLED touch display device is the same. So the description of the device using similar principle will be omitted.
FIG. 4 is a flow chart illustrating the steps of the manufacturing method of touch sensor mechanism as the embodiment shown in FIG. 3. As shown in FIG. 4, firstly, the method includes forming a sensor device module 3 in step 21, herein the step 21 is forming the sensor device module 3 on the cover lens 2. Then, the method enters the step 22.
In the step 22, the manufacturing method includes performing the assembly operation to manufacture the touch display device having touch function, wherein the step 22 is combining a structure having the cover lens 2 and the sensor device module 3 with the touch display module 401 to form a touch display device having touch function.
FIG. 5 is a flow chart illustrating the detail steps of preparing a touch display module having the sensor device module of the manufacturing method of the touch sensor mechanism shown in FIG. 4. As shown in FIG. 5, the method includes manufacturing a decoration 102 on the cover lens 2 in step 211, and then entering the step 212.
In step 212, the manufacturing method includes disposing the touch sensor module 3 on the decoration 102.
FIG. 6 is a flow chart illustrating the detail steps of covering a cover lens on the touch display module in the manufacturing method for the touch sensor mechanism shown in FIG. 4. As shown in FIG. 6, the manufacturing method includes performing LCD display module processes in step 221 to form a touch display module 401 having a top polarizer 106, a color filter glass 107, a color filter module 108, a liquid crystal module 109, a thin film transistor 110, and a thin film transistor array glass 111, and then entering the step 222.
In step 222, the manufacturing method includes attaching a structure 30 having the cover lens 2, the decoration 102 and the touch sensor module 3 to the touch display module 401.
FIG. 7 is a schematic drawing illustrating the structure and operation of another embodiment of the touch sensor mechanism of the present invention. As shown in FIG. 7, the touch sensor mechanism 1 of the present invention includes a cover lens 2 and a sensor device module 3. Herein, the touch sensor mechanism 1 can be applied in an on-cell LCD touch display device 5, wherein the on-cell LCD touch display device 5 includes the cover lens 2, a decoration 502, a top polarizer 503, the sensor device module 3, a color filter glass 507, a color filter module 508, a liquid crystal module 509, a thin film transistor 510, and a thin film transistor array glass 511, wherein the top polarizer 503, the sensor device module 3, the color filter glass 507, the color filter module 508, the liquid crystal module 509, the thin film transistor 510, and the thin film transistor array glass 511 form the touch display module 50.
Regarding the cover lens 2, the cover lens 2 is a transparent material with a reduced thickness, a high dielectric constant (>4.5) and a high mechanic strength (>700 MPa) for touch. The finger's touching capacitance (CF) can be greatly improved by reducing the thickness and increasing the dielectric constant, and the ratio (CF/CP) of the finger's touching capacitance (CF) to the sensor parasitic capacitance of sensor device (CP) of the sensor device module 3 is also greatly improved. Therefore, the signal-to-noise ratio (SNR) can be adjusted to a suitable value to prevent the sensitivity from being too high or too low. Because of the increasing of the finger's touching capacitance (CF), the tolerance of crosstalk noise between sensors of the sensor device module 3 can be improved, and serious electromagnetic interaction due to the large size touch display device 5 can be eliminated to provide more tolerance in capacitance device design.
Herein, since the sensors of the sensor device module 3 is the same as the description of sensors in the out-cell LCD touch display device shown in FIG. 3, and the distance between the user's finger and the sensors is the thickness of the cover lens 2, the influence to the signal-to-noise ratio (SNR) is the same.
In other words, sapphire (Al2O3) in varied axis (such as a-axis, c-axis, m-axis, and r-axis) can be selected as the material of the cover lens 2 in this embodiment. Herein, for example, the material of cover lens 2 is sapphire in c-axis, the compression strength ≧2000 MPa, and the dielectric constant ∈r is 9.3, under a condition of the same compression strength requirement with Chemically Strengthened Glass, the thickness can reduce to 0.35 d. The signal-to-noise ratio (SNR) is (μU−μP)/σU, wherein (μU−μP)=135×(11.5/4.5)×(0.7/0.245)=797 and σU=27, such that the signal-to-noise ratio (SNR) is (797/27)=29.5, which is much greater than the signal-to-noise ratio in prior art (SNR=5). For another example, the material of cover lens 2 is sapphire in a-axis, the compression strength ≧2000 MPa, and the dielectric constant ∈r is 11.5, under a condition of the same compression strength requirement with Chemically Strengthened Glass, the thickness can reduce to 0.35 d. The signal-to-noise ratio (SNR) is (μU−μP)/σU, wherein (μU−μP)=985.7, and σU=27, such that the signal-to-noise ratio (SNR) is (985.7/27)=36.5, which is greatly much greater than the signal-to-noise ratio in prior art (SNR=5).
Moreover, the material of cover lens can be an aluminum oxynitride glass (Al(64+x)/3O(32-x)Nx, 2.75≦x≦5) with compression strength higher than 2677 MPa and the dielectric constant (∈r) 9.19, under a condition of the same compression strength requirement with Chemically Strengthened Glass, the thickness can reduce to 0.262 d (0.183 mm). In other words, the signal-to-noise ratio (SNR) is (μU−μP)/σU, wherein (μU−μP)=1052.3, and σU=27, such that the signal-to-noise ratio (SNR) is (1052.3/27)=39, which is greatly much greater than the signal-to-noise ratio in prior art (SNR=5).
Regarding the sensor device module 3, the sensor device module 3 at least includes a first sensor layer 31 of a y-axis sensor circuit net 301, an insulated layer 32 and a second sensor layer 33 of an x-axis sensor circuit net 302, such that the sensor device module 3 includes at least two sensor devices. In the view point of tolerance of crosstalk noise between any two sensor devices, it is desirable to have lower thickness of the cover lens 2, higher dielectric constant of the cover lens 2, larger distance between sensor devices, and lower current for driving circuit.
Herein, although the touch sensor mechanism 1 of this embodiment is applied in the on-cell LCD touch display device 5, the operation principle of the on-cell LCD touch display device and on-cell OLED touch display device is the same. So the description of the device using similar principle will be omitted.
FIG. 8 is a flow chart illustrating the steps of the manufacturing method of touch sensor mechanism as the embodiment shown in FIG. 7. As shown in FIG. 8, firstly, the method includes forming a sensor device module 3 in step 41, herein the step 41 includes preparing a touch display device 50 having the sensor device module 3 of the touch sensor mechanism 1, and then, entering the step 42.
In the step 42, the manufacturing method includes performing the assembly operation to manufacture the touch display device having touch function, wherein the step 42 includes covering the cover lens 2 of the touch sensor mechanism 1 on the top of touch display module to form a touch display device 5 having the cover lens and having touch function after finishing the processes of the touch display module in sequence.
FIG. 9 is a flow chart illustrating the detail steps of preparing a touch display module having the sensor device module in the manufacturing method for the touch sensor mechanism shown in FIG. 8. As shown in FIG. 9, the method includes first disposing the sensor device module 3 on the color filter glass in step 411, and then entering the step 412.
In step 412, the manufacturing method includes performing LCD display device processes of the touch display device 5 to make the touch display device 5 have touch display function.
FIG. 10 is a flow chart illustrating the detail steps of covering a cover lens on the touch display module in the manufacturing method of the touch sensor mechanism shown in FIG. 8. As shown in FIG. 10, firstly, the method includes manufacturing a decoration 502 on the cover lens 2 in step 421, and then entering the step 422.
In step 422, the manufacturing method includes attaching the cover lens 2 to the touch display module 50 having the touch sensor module 3.
FIG. 11 is a schematic drawing illustrating the structure and operation of yet another embodiment of the touch sensor mechanism of the present invention. As shown in FIG. 11, the touch sensor mechanism 1 of the present invention includes a cover lens 2 and a sensor device module 3. Herein, the touch sensor mechanism 1 can be applied in an on-cell P under OLED touch display device 9, wherein the on-cell P under OLED touch display device 9 includes the cover lens 2, a decoration 902, the sensor device module 3, a polarizer 903, an OLED module 909, an OLED switching thin film transistor 910, and a thin film transistor array glass 911, wherein a structure 34 consists of at least the cover lens 2, the decoration 902, and the sensor device module 3.
Regarding the cover lens 2, the cover lens 2 is a transparent material with high dielectric constant (>4.5) and high mechanic strength (>700 MPa) selected for touch. The finger's touching capacitance (CF) is greatly improved by reducing the thickness and increasing the dielectric constant, such that ratio of the finger's touching capacitance (CF) to the sensor parasitic capacitance of the sensor (CP) (not visible) in the sensor device module 3, that is (CF/CP), is also improved. The signal-to-noise ratio (SNR) related to the ratio (CF/CP) can be adjusted to a suitable value to prevent the sensitivity from being too high or too low. The tolerance of crosstalk noise between sensor to sensor of the sensor device module 3 is improved due to the improvement of finger's touching capacitance (CF), such that the electromagnetic effect due to the large size touch panel of a touch display device 9 is also eliminated to provide more tolerance in circuit design.
Herein, since the sensors of the sensor device module 3 is the same as the sensors in the out-cell LCD touch display device shown in FIG. 3, and the distance between the finger and the sensors is the thickness of the cover lens 2, the influence to the signal-to-noise ratio (SNR) is the same.
In this embodiment, although the touch display device is an on-cell P-under OLED, the operation principle of on-cell P-under OLED and on-cell P-cap OLED is the same. So the description of the device using similar principle will be omitted.
FIG. 12 is a flow chart illustrating the steps of the manufacturing method of touch sensor mechanism as the embodiment shown in FIG. 11.
In the step 92, the manufacturing method includes performing the assembly operation to manufacture the touch display device 9 having touch function, wherein the step 92 at least includes combining the cover lens 2 and the structure 34 of the sensor device module 3 with the OLED module 909 to manufacture the touch display device 9 having the touch function.
FIG. 13 is a flow chart illustrating the detail steps of forming the sensor device module of the manufacturing method of the touch sensor mechanism shown in FIG. 12. As shown in FIG. 13, the method firstly performs a process for forming a decoration 902 in step 921, and then enters the step 922.
In step 922, the method includes disposing the sensor device module 3 on the decoration 902, and attaching a polarizer 903 thereon.
FIG. 14 is a flow chart illustrating the detail steps of performing the assembly operation to manufacture the touch display device of the manufacturing method of the touch sensor mechanism shown in FIG. 12. As shown in FIG. 14, the method includes manufacturing OLED device in the step 931 firstly, and then entering step 932.
In step 932, the method includes assembling and packaging the OLED device and the cover lens 2 of the sensor device module 3 together.
FIG. 15 is a schematic drawing for illustrating the structure and operation of yet another embodiment of the touch sensor mechanism of the present invention. As shown in FIG. 15, the touch sensor mechanism 1 of the present invention includes a cover lens 2 and a sensor device module 3, wherein the touch sensor mechanism 1 is applied in an in-cell LCD touch display device 6. The in-cell LCD touch display device 6 includes the cover lens 2, a decoration 602, a top polarizer 603, the sensor device module 3, a color filter glass 604, a color filter 605, a liquid crystal module 606, a liquid switch thin film transistor 607, a capacitance sensing thin film transistor 608, and a thin film transistor glass 609, wherein the sensor device module 3 is disposed in the capacitance sensing thin film transistor 608 to form the in-cell type, and a touch display module 60 consists of the color filter glass 604, the color filter 605, the liquid crystal module 606, the liquid switch thin film transistor 607, the capacitance sensing thin film transistor 608, and the thin film transistor glass 609.
Regarding the cover lens 2, the cover lens 2 is a transparent material with a reduced thickness, a high dielectric constant (>4.5) and a high mechanic strength (>700 MPa) for touch. The finger's touching capacitance (CF) can be greatly improved by reducing the thickness and increasing the dielectric constant, and ratio (CF/CP) of the finger's touching capacitance (CF) to the sensor parasitic capacitance of sensor device (Cp) of the sensor device module 3 is also greatly improved. Therefore, the signal-to-noise ratio (SNR) can be adjusted to a suitable value to prevent the sensitivity from being too high or too low. Because of the increasing of the finger's touching capacitance (CF), the tolerance of crosstalk noise between sensors of the sensor device module 3 to the thin film transistor (TFT) driver of liquid crystal display module 60 can be improved, and serious electromagnetic interaction due to the large size touch display device can be eliminated to provide more tolerance in circuit design.
According to the prior art, the compression strength of general reinforced glass is 700 MPa, the dielectric constant ∈r of the general reinforced glass is 4.5, and the thickness of the general reinforced glass is 0.7 mm. The signal-to-noise ratio (SNR) is (μU−μP)/σU, wherein (μU-μp) is 135, σU is 27, so the signal-to-noise ratio (SNR)=(135/27)=5. However, sapphire (Al2O3) in varied axis (such as a-axis, c-axis, m-axis, and r-axis) can be selected as the material of the cover lens 2 in this embodiment.
Herein, for example, the material of cover lens 2 is sapphire in a-axis, the compression strength ≧2000 MPa, and the dielectric constant ∈r is 11.5, under a condition of the same compression strength requirement with Chemically Strengthened Glass, the thickness can reduce to 0.245 mm. The signal-to-noise ratio (SNR) is (μU−μP)/σU, wherein (μU−μP)=(135×7/12)+(135×5/12×(11.5/4.5)×(0.7/0.245))=489.46, and σU=27, such that the signal-to-noise ratio (SNR) is (489.46/27)=18.13. The signal-to-noise ratio (SNR) is raised to 3.626 times (18.13/5=3.626) comparing with the signal-to-noise ratio of the prior art (SNR=5). If the thickness of the cover lens 2 is 0.3 under a same process yield condition, the (μU−μP)=(135×7/12)+(135×5/12×(11.5/4.5)×(0.7/0.3))=414.15, and σU=27, so that the signal-to-noise ratio (SNR) is (μU−μP)/σU=(414.15/27)=15.34. The signal-to-noise ratio (SNR) is raised to 3.068 times (15.34/5=3.068) comparing with the signal-to-noise ratio of the prior art (SNR=5). If the thickness of the cover lens 2 is 0.4 mm under a same process yield condition, the (μU−μP)=(135×7/12)+(135×5/12×(11.5/4.5)×(0.7/0.4))=330.31, and σU=27, so that the signal-to-noise ratio (SNR) is (μU−μP)/σU=(330.31/27)=12.23. The signal-to-noise ratio (SNR) is raised to 2.446 times comparing with the signal-to-noise ratio of the prior art (SNR=5). Therefore, it is obvious that the tolerance of the signal-to-noise is increased while reducing the thickness of the cover lens.
For another example, if the material of cover lens 2 is sapphire in c-axis, which has the compression strength ≧2000 MPa, and the dielectric constant ∈r is 9.3, and a thickness 0.35 d (0.245 mm), the (μU−μP)=(135×7/12)+(135×5/12×(9.3/4.5)/(0.7/0.245))=410.89, and σU=27, such that the signal-to-noise ratio (SNR) is (μU−μP)/σU=(410.89/27)=15.22. The signal-to-noise ratio (SNR) is raised to 3.044 (15.22/5=3.044) times comparing with the signal-to-noise ratio of the prior art (SNR=5).
For yet another example, if the cover lens 2 uses an aluminum oxynitride glass (Al(64+x)/3O(32-x)Nx, 2.75≦x≦5), which has the compression strength ≧2677 MPa, and the dielectric constant ∈r is 9.19, and a thickness 0.262 d (0.1.83 mm), the (μU−μP)=(135×7/12)+(135×5/12×(9.3/4.5)/(0.7/0.183))=518.16, and σU=27, such that the signal-to-noise ratio (SNR) is (μU−μP)/σU=(518.16/27)=19.19. The signal-to-noise ratio (SNR) is raised to 3.838 times comparing with the signal-to-noise ratio of prior art (SNR=5).
Regarding the sensor device module 3, the sensor device module 3 has at least two sensor devices. In the view point of tolerance of crosstalk noise between any two sensor devices, it is desirable to have lower thickness of the cover lens 2, higher dielectric constant of the cover lens 2, larger distance between sensor devices, and lower current for driving circuit.
In this embodiment, the sensor device module 3 is disposed in the capacitance sensing thin film transistor 608 to form the in-cell type.
In this embodiment, although the touch display device is an in-cell LCD, the operation principle of in-cell LCD and in-cell color conversion OLED is the same. So the description of the device using similar principle will be omitted.
FIG. 16 is a flow chart illustrating the steps of the manufacturing method of touch sensor mechanism as the embodiment shown in of FIG. 15. As shown in FIG. 16, in step 51, the method includes forming a sensor device module 3 firstly, herein, a touch display module 60 is prepared to have the sensor device module 3 of a touch sensor mechanism 1; and then entering the step 52.
In the step 52, the manufacturing method includes performing the assembly operation to manufacture the touch display device 6 having touch function, wherein a cover lens 2 of the touch sensor mechanism 1 is covered on the top of the touch display device 6 having the touch function. After finishing the processes for manufacturing the touch display device 60, the touch display device 6 is covered by the cover lens 2 and has the touch function.
FIG. 17 is a flow chart illustrating the detail steps of forming a sensor device module of the manufacturing method of touch sensor mechanism shown in FIG. 16. As shown in FIG. 17, in step 512, the method includes firstly forming the capacitance sensing thin film transistor 608 having the sensor device module 3 and the liquid switch thin film transistor 607 on the thin film transistor glass 609, and then entering the step 513.
In the step 513, the manufacturing method includes performing the processes of LCD display device in order to form the LCD display device having the touch function.
FIG. 18 is a flow chart illustrating the detail steps of performing the assembly operation to manufacture the touch display device of the manufacturing method of the touch sensor mechanism shown in FIG. 16. As shown in FIG. 18, in step 521, the method includes firstly performing a process for forming a decoration 602, and then entering the step 522.
In step 522, the manufacturing method includes attaching the decoration 602 with the touch display module 60 having sensor device module 3. FIG. 19 is a schematic drawing for illustrating the structure and operation of another embodiment of touch sensor mechanism of the present invention. As shown in FIG. 19, the touch sensor mechanism 1 of the present invention includes a cover lens 2 and a sensor device module 3, wherein the touch sensor mechanism 1 is applied in an in-cell OLED touch display device 7. The in-cell OLED touch display device 7 includes the cover lens 2, a decoration 702, a top polarizer 703, an OLED module 704, an OLED switch thin film transistor 705, the sensor device module 3, a capacitance sensing thin film transistor 706, and a glass substrate 707, wherein the sensor device module 3 is disposed in the capacitance sensing thin film transistor 706 to form the in-cell type.
Regarding the cover lens 2, the cover lens 2 is selected as a transparent material with a reduced thickness, a high dielectric constant (>4.5) and a high mechanic strength (>700 MPa) for touch. The finger's touching capacitance (CF) is greatly improved by reducing the thickness and increasing the dielectric constant, and ratio (CF/CP) of the finger's touching capacitance (CF) to the sensor parasitic capacitance of sensor (CP) of the sensor (not visible) of the sensor device module 3 is also greatly improved. Therefore, the signal-to-noise ratio (SNR) can be adjusted to a suitable value to prevent the sensitivity from being too high or too low. Because of the increasing of the finger's touching capacitance (CF), the tolerance of crosstalk noise between sensors of the sensor device module 3 and switch TFT device of OLED display module can be improved, and serious electromagnetic interaction due to the large size touch panel of a touch display device 6 can be eliminated to provide more tolerance in circuit design.
In this embodiment, the sensor device module 3 is disposed in the capacitance sensing thin film transistor 706 to form the in-cell type.
FIG. 20 is a flow chart illustrating the steps of the manufacturing method of touch sensor mechanism as the embodiment shown in FIG. 19. As shown in FIG. 20, in step 400, the method includes forming a sensor device module 3 firstly, herein, a touch display module 60 is prepared to have the sensor device module 3 of a touch sensor mechanism 1; and then entering the step 500.
In the step 500, the manufacturing method includes performing the assembly operation to manufacture the touch display device 6 having touch function, wherein a cover lens 2 of the touch sensor mechanism 1 is disposed to cover the top of the touch display device 7 having the touch function. After finishing the processes for manufacturing the touch display device, the touch display device 7 is covered by the cover lens 2 and has the touch function.
FIG. 21 is a flow chart illustrating the detail steps of forming a sensor device module of the manufacturing method of touch sensor mechanism shown in FIG. 20. As shown in FIG. 21, in step 4001, the method includes firstly performing the capacitance sensing thin film transistor 706 having the sensor device module 3 and the OLED switch thin film transistor 705 on the glass substrate 707, and then entering the step 4002.
In step 4002, the manufacturing method includes performing the processes of OLED display device 7 to form the OLED display device having the touch function.
FIG. 22 is a flow chart illustrating the detail steps of performing the assembly operation to manufacture the touch display device of the manufacturing method of the touch sensor mechanism shown in FIG. 20. As shown in FIG. 22, in step 5001, the method includes firstly performing a process for forming a decoration 702 and disposing a polarizer on a surface of the decoration 702, and then entering the step 5002.
In step 5002, the method includes attaching the decoration 602 with the touch display module 70 having sensor device module 3.
According to the embodiments described above, the advantages of using the sapphire and the aluminum oxynitrid glass with high compression strength and high dielectric constant are: 1. the thickness of the cover lens can be greatly reduced under the same compression strength; 2. for the out-cell type design, the signal-to-noise ratio SNR is raised to several times due to the synergy effect of the reduced thickness and high dielectric constant, and it provides more tolerance for designing the capacitance sensing device design; 3. for the on-cell type design, the signal-to-noise ratio SNR is raised to several times due to the synergy effect of the reduced thickness and high dielectric constant, and it provides more tolerance for designing the capacitance sensing device design; 4. for the in-cell type design, if it is used for LCD, the signal-to-noise ratio SNR is not raised as high as the out-cell type and the on-cell type due to the gap of color filter glass, and if it is used for OLED, the raising effect of signal-to-noise ratio SNR is as high as the out-cell type and the on-cell type due to color filter glass is not necessary in the OLED device; 5. the sensing area can be reduced, the distance between sensors can be increased and the level of noise can be reduced due to the synergy effect of the reduced thickness and high dielectric constant under the same signal to noise SNR.
According to the embodiments described above, a touch sensor mechanism and the manufacturing method thereof applied in a touch display device can be obtained. A transparent material with high dielectric constant (>4.5) and high mechanic strength (>700 MPa) is selected to serve as the cover lens for touch, such that the thickness is reduced, the dielectric constant is increased, and finger's touching capacitance (CF) is improved. Moreover, the ratio (CF/CP) of the finger's touching capacitance (CF) to the sensor parasitic capacitance of sensor (CP) of the sensor (not visible) of the sensor device module is also greatly improved and the signal-to-noise ratio (SNR) related to the ratio (CF/CP) can be adjusted to a suitable value to prevent the sensitivity from being too high or too low. The tolerance of crosstalk noise between sensor to sensor can be improved because of the improved signal-to-noise ratio (SNR), such that serious electromagnetic interaction due to the large size touch panel of a touch display device and centralization of the touch device can be also eliminated to provide more tolerance in circuit design.
Although the present invention has been described with reference to the preferred embodiments, it will be understood that the invention is not limited to the details described thereof. Various substitutions and modifications have been suggested in the foregoing description, and others will occur to those of ordinary skill in the art. Therefore, all such substitutions and modifications are intended to be embraced within the scope of the invention as defined in the appended claims.

## Claims

1. A touch sensor mechanism for a touch display device, comprising:
a cover lens made by a transparent material having a dielectric constant greater than 4.5 and a compression strength greater than 700 MPa for generating a finger's touching capacitance (CF) while a finger of a user touches thereon; and
a sensor device module including a plurality of sensor devices having a sensor parasitic capacitance (CP);
wherein the cover lens and the sensor device module are disposed in the touch display device in such a manner that a ratio of a standard deviation value (σU) of the finger's touching capacitance (CF) of the cover lens to the sensor parasitic capacitance (CP) of the sensor device module defines a signal-to-noise ratio (SNR), and the signal-to-noise ratio (SNR) is adjusted along with the finger's touching capacitance (CF) by reducing thickness of the cover lens.

2. The touch sensor mechanism as claimed in claim 1, wherein the touch display device is selected from a group consisting of an out-cell LCD touch display device, an in-cell LCD touch display device, an on-cell LCD touch display device, an in-cell/on-cell hybrid LCD touch display device, an out-cell OLED touch display device, an on-cell OLED touch display device, and an in-cell OLED touch display device.

3. The touch sensor mechanism as claimed in claim 2, wherein the transparent material of the cover lens is a sapphire or an aluminum oxynitrid glass.

4. The touch sensor mechanism as claimed in claim 2, wherein the sensor device module includes a first electrode layer having a y-axis circuit net, an insulated layer and a second electrode layer having an x-axis circuit net and the first electrode layer is a sensing electrode, and the second electrode layer is a driving electrode.

5. The touch sensor mechanism as claimed in claim 3, wherein a composition of the aluminum oxynitrid glass is Al(64+x)/3O(32-x)Nx, and 2.75≦x≦5.

6. A manufacturing method of a touch sensor mechanism for a touch display device, comprising the steps:
preparing a cover lens made by a transparent material having a dielectric constant greater than 4.5 and a compression strength greater than 700 MPa for generating a finger's touching capacitance (CF) while a finger of a user touches thereon;
forming a sensor device module including a plurality of sensor devices having a sensor parasitic capacitance (CP); and
assembling the cover lens, the sensor device module and a touch display module with the cover lens covering the sensor device module to form the touch display device;
wherein the cover lens and the sensor device module are disposed in the touch display device in such a manner that a ratio of a standard deviation value (σU) of the finger's touching capacitance (CF) of the cover lens to the sensor parasitic capacitance (CP) of the sensor device module defines a signal-to-noise ratio (SNR), and the signal-to-noise ratio (SNR) is adjusted along with the finger's touching capacitance (CF) by reducing thickness of the cover lens.

7. The manufacturing method as claimed in claim 6, wherein the touch display module is formed with the sensor device module and the step of assembling the cover lens, the sensor device module and the touch display module is accomplished by covering the touch display module with the cover lens.

8. The manufacturing method as claimed in claim 7, wherein the touch display device is selected from a group consisting of an out-cell LCD touch display device, an in-cell LCD touch display device, an on-cell LCD touch display device, an in-cell/on-cell hybrid LCD touch display device, an out-cell OLED touch display device, an on-cell OLED touch display device, and an in-cell OLED touch display device.

9. The manufacturing method as claimed in claim 6, wherein the sensor device module is formed on the cover lens, and the step of assembling the cover lens, the sensor device module and the touch display module is accomplished by combining the cover lens with the touch display module.

10. The manufacturing method as claimed in claim 8, wherein the touch display device is an out-cell LCD touch display device.