# Patent

## Title
Organic electronic memory component, memory component arrangement and method for operating an organic electronic memory component

## Abstract

The invention relates to an organic electronic memory component having an electrode and a counterelectrode and an organic layer arrangement formed between said electrode and counterelectrode and in electrical contact herewith, wherein the organic layer arrangement comprises the following organic layers: an electrode-specific charge carrier transport layer and a counterelectrode-specific charge carrier-blocking layer and disposed between said electrode-specific charge carrier transport layer and counterelectrode-specific charge carrier-blocking layer a memory layer region having a charge carrier-storing layer and a further charge carrier-storing layer between which charge carrier-storing layer and a further charge carrier-storing layer is disposed a charge carrier barrier layer. Furthermore the invention relates to a method for the operating of an organic electronic memory component.

## Background
CROSS-REFERENCE TO RELATED APPLICATION
This is a submission pursuant to 35 U.S.C. 154(d)(4) to enter the national stage under 35 U.S.C. 371 for PCT/DE2008/000638 filed Apr. 17, 2008. Priority is claimed under 35 U.S.C. 119(a) and 35 U.S.C. 365(b) to German Patent Application Number 10 2007 019 260.8 filed Apr. 17, 2007. The subject matters of PCT/DE2008/000638 and German Patent Application Number 10 2007 019 260.8 are hereby expressly incorporated herein by reference in their entirety.
The invention relates to an organic electronic memory component, a memory component arrangement and a method for the operating of an organic electronic memory component.
BACKGROUND OF INVENTION
The conventional production of memory components in silicon technology depends on complex. circuits made of transistors, capacitors and resistors. There is a series of prior art memory principles both for volatile (for example DRAM—“Dynamic Random Access Memory”) as well as non-volatile (for example so-called. flash memories). The storing of charges in the silicon-based technology however will reach its scaling limits in the foreseeable future. Furthermore the currently-used memory principles generally require expensive high-temperature processes and are less suitable for three-dimensional integration. There is therefore an intensive search underway worldwide for alternative methods and materials for the permanent storage of information.
Organic electronics has proved very promising as an alternative to silicon-based electronics. The benefits are the comparably simple processes such as printing or vaporising and allowing to condense at low temperatures, the opportunity to work on flexible substrates and the large variety of molecular materials.
There are various prior art memory components with one or more active organic layers. Potember et al.: Applied Physics Letters, Vol. 34, 1979, pages 405-407 “Electrical switching and. memory phenomena in Cu-TCNQ thin films” describe a memory element comprising a copper contact, the active organic material Cu-TCNQ and an aluminium top contact. This memory cell can be reversibly switched by deliberately applying an electrical field between a high resistance (2 MOhm) and a low resistance (200 Ohm). The switching behaviour is caused by a charge transfer complex or a volume effect in the Cu-TCNQ. Adversely in this case is the required thickness of the Cu-TCNQ layer is 10 μm*.
Yang et al.: “Applied Physics Letters, Vol. 80, 2002, pages 2997-2999 “Organic electrical bistable devices and rewritable memory cells” describe a memory cell with an organic active material 2-amino-4,5-imidazole dicarbonitrile (AIDCN). The memory cell comprises several organic layers made of (AIDCN) which enclose a thin aluminium layer. For the switching process this system requires a thin aluminium layer which is embedded between the organic layers and aluminium as the electrode material. A disadvantage of this structure is the need to use aluminium electrodes and the embedded thin aluminium layer, which makes the manufacture more expensive and particularly the ultimately un-clarified switch mechanism which hinders a systematic further development of the system.
A further memory cell with an active organic material which exhibits a switchable behaviour is described in Bandyopadhyay et al.: Applied Physics Letters, Vol. 82, 2003, pages 1215-1217 “Large conductance switching and memory effects in organic molecules for data-storage applications”. The manufacture of the active organic layer described therein by Rose Bengal is extremely circuitous and requires several hours of baking in a vacuum, which effectively prevents manufacture.
Memory elements which contain different organic materials are also described by Cölle et al.: Organic Electronics, Vol. 7, 2006. pages 305-312 “Switching and filamentary conduction in non-volatile organic memories”. Various metal/organic/metal structures are investigated here. The memory behaviour is caused by a thin oxide layer on the electrodes and the transport of the electrons via filaments. This work also shows that the reproducibility and reliability of the switching performance, the switch voltage and the memory element are very difficult in themselves and depend on many different uncontrollable. causes. Also the underlying switching mechanisms are ultimately unclear which impedes further optimisation of this memory.
Krieger et. al. in “Synthetic Metals. Vol. 122, 2001, pages 199-202 “Molecular analogue memory cell based on electrical switching and memory in molecular thin films” disclose a test structure comprising an array of 8×8 cells of a size 100 μm×100 μm. Between two metal electrodes is a polymer film (polyphenylacetylene) of thickness 100 to 500 nm mixed with 5-7% NaCl. By slowly increasing the voltage to the electrodes the NaCl is separated into Na+−and CL−−ions. These travel towards the electrodes and cause the resistance to change. This can now be exploited to create a memory cell. This structure has the disadvantage that a strong electrical field must he applied to the electrodes for a long time to trigger the diffusion of the ions, i.e. rapid switching is fairly improbable. Furthermore this structure is a volatile storage cell since the electrical field is switched off the ions travel away from the electrodes through their concentration gradients in the layer and thereby the status cannot be retained.
The cited works all have in common the fact that the switching effects are not clearly defined and for example depend on the forming of metallic filaments, the diffusion of ions or metal atoms, or on substances shifting onto contacts.
The company Thin Film Electronics (www.thinfilm.se) together with the company Xaar has developed an organic Ferro-electrical polymer which can act as a non-volatile memory. This approach exploits the ferro-electrical properties of a polymer which can be expected to be more stable in comparison to the aforementioned effects. Typical for components of polymer electronics is their composition of one or two (seldom several) polymer layers due to the problem when precipitating of polymer heterostructures that already-precipitated layers must not be detached again, however there are only two main groups of polymer solvents, namely hydrophilic and hydrophobic. It is therefore hard to produce complicated layer stacks from polymers.
The memory mechanisms cited above can be linked to form memory modules which are based on different technologies. The simplest is the arrangement in a matrix of crossed metallic conducting contacts, as used for example by Krieger et. al.: Synthetic Metals, Vol. 122, 2001, pages 199-202 “Molecular analogue memory cell based on electrical switching and memory in molecular thin films”. This arrangement can be used to produce high memory densities. It is sufficient with respect to the structuring of the memory cells to structure the contact tracks while the intermediately disposed organic(n) layer(s) can be applied over large surfaces whereby the technologically difficult lateral structuring of organic materials can be avoided.
SUMMARY OF THE INVENTION
The object of the invention is to create an improved organic electronic memory component, a memory component arrangement and an improved process for the operating of an organic electronic memory component which exhibit a stable and reproducible memory behaviour.
The object is achieved by an organic electronic memory component according to the independent claim 1 and a memory component arrangement according to the independent claim 14 and a process for its operating according to the independent claim 16. Beneficial embodiments of the invention are the subject of dependant sub-claims.
The invention comprises the concept of an organic electronic memory component having an electrode and a counterelectrode and an organic layer arrangement formed between said electrode and counterelectrode and in electrical contact herewith, wherein the organic layer arrangement comprises the following organic layers: an electrode-specific charge carrier transport layer and a counterelectrode-specific charge carrier-blocking layer and disposed between the two a memory layer region with a charge carrier-storing layer and a further charge carrier-storing layer between which a charge carrier barrier layer is disposed.
Benefits of the invention with respect to the state of the art exist particularly in that such a memory component can be produced cost-effectively with the aid of standard manufacturing processes. Unlike the difficult-to-control mechanisms in the case of memory modules which use a formation of metallic filaments or the diffusion of ions or metal atoms or even the process of shifting onto contacts, the invention permits a controlled, stable and reproducible storage of electronic information. By applying an electrical voltage charge carriers, in other words electrons or holes (defective electrons), are injected into the organic layer arrangement and once there are transported to the charge carrier-storing layer where they are stored. An erasing of the memory state thus produced takes place wherein the polarity of the electrical voltage applied for the storage is reversed.
The electrode and the counterelectrode are preferably made of a highly-conducting material, for example metal. Non-metallic electrode materials can be used also provided these exhibit an electric conductivity of at least 100 S/cm. Such non-metallic electrode materials include for example electrically highly conducting oxides, nitrides and polymers.
A preferred further development of the invention provides that the electrode-specific charge-carrying transport layer is electrically doped. In this case the difference is that the counterelectrode-specific charge carrier-blocking layer is not usually electrically doped. The electrode-specific charge-carrying transport layer acts to inject charge carriers in form of electrons or holes(defective electrons) effectively into the organic layer arrangement and to transport them there without significant electrical loss.
The electrical doping of organic materials is as such known in different embodiments. The organic materials can be provided with n-doping or p-doping. N-dopants are generally molecules or neutral radicals which exhibit a HOMO level (HOMO—“Highest Occupied Molecular Orbital”) of less than 4.5 eV, preferably less than around 2.8 eV and further preferably less than around 2.6 eV. The HOMO level of the doping material can be determined from cyclovoltammetric measurements of the oxidation potential. Alternatively the reduction potential of the donator cation can be determined in a salt of the donator. The donator should exhibit an oxidation potential which is less than or equal to −1.5V, preferably less than or equal to around −2.0V and further preferably less than or equal to around −2.2V with respect to the Fc/Fe+(ferrocene/ferrocenium redox pair). The molar mass of the n-doping material preferably amounts to between around 100 and around 2000 g/mol and further preferably to between around 200 and 1000 g/mol. A molar doping concentration for electric n-doping amounts in a preferred embodiment to between 1:1000 (acceptor molecule:matrix molecule) and 1:2, preferably to between 1:100 and 1:5 and further preferably to between 1:100 and 1:10. The specified embodiments respectively improve the stability of the dopants, the smaller the oxidation potential, the less they are stable in air.
It can be provided that the donator first farms from a precursor during the manufacture of the organic layers or a subsequent layer-manufacturing process as described in the document DE 103 07 125. The formerly specified values for the HOMO level of the donator then relate to the species hereby arising. Alternatively the doping of the organic material may be manufactured in a different manner and method. These include for example a co-vaporisation of the organic material with a metal of a lesser work function. Lithium and Caesium are suitable for a n-doping for example.
P-dopants are generally molecules or neutral radicals in which the LUMO level (LUMO—“Lowest Unoccupied Molecular Orbital”) is energetically higher than 4.5 eV, preferably higher than 4.8 eV and further preferably higher than 5.04 eV. The LUMO level of the acceptor for p-doping can be determined with the aid of cyclovoltammetric measurements of the reduction potential. The acceptor preferably exhibits a reduction potential with respect to Fc+ of at least −0.3V, further preferably of at least 0.0V and further preferably of at least around 0.24V. Preferably used are acceptors with a molar mass of around 100 to 2000 g/mol, preferably with a molar mass of between around 200 and 1000 g/mol and further preferably with a molar mass of between around 300 g/mol and 2000 g/mol. The molar doping concentration for p-doping in an expedient embodiment lies between 1:1000 (acceptor molecule: matrix molecule) and 1:2, preferably between 1:100 and 1:5 and further preferably between 1:100 and 1:10. The acceptor may first form from a precursor during the layer-manufacturing process or the subsequent layer-manufacturing process. The above-specified LUMO level of the acceptor then relates to the arising species.
In an convenient embodiment of the invention it may be provided that a charge carrier injection layer is formed between the electrode and the electrode-specific charge-carrying transport layer. In this case particularly salts of lithium and of caesium but also of rubidium, potassium and sodium can be used to manufacture the charge carrier injection layer. The layer thickness lies preferably in the region of a few angstroms to a few nanometers.
A advantageous embodiment of the invention provides an electron-based memory embodiment wherein the electrode is embodied as a cathode and the counterelectrode as an anode and the electrode-specific charge-carrying transport layer is a cathode-specific electron transport layer, the counterelectrode-specific charge carrier-blocking layer is an anode-specific electron-blocking layer, the charge carrier-storing layer is an electron-storing layer, the further charge carrier-storing layer is a further electron-storing layer and the charge carrier barrier layer is an electron barrier layer.
Preferably a further embodiment of the invention provides that the following energetic relationships apply: the LUMO level of the cathode-specific electron transport layer lies energetically higher than the LUMO level of the electron-storing layer, which electron-storing layer is disposed adjacently with respect to the cathode-specific electron transport layer. the LUMO level of the anode-specific electron-blocking layer lies energetically higher than the LUMO level of the further electron-storing layer, which further electron-storing layer is disposed adjacently with respect to the anode-specific electron-blocking layer and the LUMO levels of the electron-storing layer and the further electron-storing layer lie energetically lower than the LUMO level of the electron barrier layer. In this way so-called potential wells are formed in the region of the electron-storing and the further electron-storing layer in which potential wells the electrons are stored in that they “are trapped” there.
In an advantageous embodiment of the invention it may be provided that the LUMO level of the anode-specific electron-blocking layer lies energetically higher than the respective LUMO level of the following layers: electron-storing layer, further electron-storing layer and cathode-specific electron transport layer.
A further embodiment of the invention can provide that for the electron-storing layer and the further electron-storing layer at least the LUMO level of the electron-storing layer or at least the LUMO level of the further electron-storing layer is energetically lower by around 0.1 eV to around 3.0 eV than the LUMO level of the anode-specific electron-blocking layer.
A preferred further embodiment of the invention provides a hole-based memory embodiment wherein the electrode is embodied as an anode and the counterelectrode as a cathode and the electrode-specific charge-carrying transport layer is an anode-specific hole transport layer, the counterelectrode-specific charge carrier-blocking layer is a cathode-specific hole-blocking layer, the charge carrier-storing layer is a hole-storing layer and the further charge carrier-storing layer and a further hole-storing layer and the charge carrier barrier layer are a hole barrier layer.
In an convenient embodiment of the invention it can be provided that the following energetic relationships apply: the HOMO level of the anode-specific hole transport layer is energetically higher than the HOMO level of the hole-storing layer, which hole-storing layer is disposed adjacently with respect to the anode-specific hole transport layer, the HOMO level of the cathode-specific hole-blocking layer is energetically higher than the HOMO level of the further hole-storing layer, which hole-storing layer is disposed adjacently with respect to the cathode-specific hole-blocking layer and the HOMO level of the hole-storing layer and the further hole-storing layer are energetically higher than the HOMO level of the hole barrier layer. In this way so-called potential wells are formed in the region of the hole-storing layer and the further hole-storing layer in which potential wells holes can be stored wherein they “are trapped” there.
An advantageous embodiment of the invention provides that the HOMO level of the cathode-specific hole-blocking layer is energetically higher than the respective HOMO level of the following layers: hole-storing layer, further hole-storing layer and anode-specific hole transport layer.
A further embodiment of the invention preferably provides that for the hole-storing layer and the further hole-storing layer at least the HOMO level of the hole-storing layer or at least the HOMO level of the further hole-storing layer lies energetically around 0.1 eV to around 3.0 eV lower than the HOMO level of the cathode-specific hole-blocking layer.
In an advantageous embodiment of the invention it may be provided that an electrical resistance via the electrode, the counterelectrode and the organic layer arrangement in an on-status and an off-status respectively lies in a range of around 1 Ohm to around 100 MOhm, preferably within a range of around 0.1 kOhm to around 100 kOhm. Generally in this case a status with the greater resistance is designated as an off-status and a status with a comparatively smaller resistance as an on-status.
A further development of the invention can provide that the ratio of the electrical resistances via the electrode, the counterelectrode and the organic layer arrangement in the on-status and the electrical resistance in the off-status shall be greater than 1:1.5.
In the case of the method for operating the organic electronic memory component it may be provided that a further storage procedure is carried out wherein an electrical current having the polarity and a further voltage value is applied to the electrode and the counterelectrode which voltage value is different to a previously applied voltage value. By this means it is possible to store more than one memory state in a non-volatile manner. The different voltages used for the write process produce a different charge transfer in the organic layer stack such that different resistance values are set for the component.



DESCRIPTION OF THE EMBODIMENTS OF THE INVENTION
The invention is hereinafter described in further detail on the basis of an exemplified embodiment with reference to drawings. The drawings show
FIG. 1: a schematic illustration of a sequence of layers for an organic electronic memory component.
FIG. 2: a schematic illustration of energy levels for an electron-based memory component.
FIG. 3: a schematic illustration of a sequence of layers for the memory component from FIG. 2,
FIG. 4: a schematic illustration of energy levels for an electron-based memory component,
FIG. 5: a schematic illustration of a sequence of layers for the memory component from FIG. 4,
FIG. 6: a current-voltage curve for an organic electronic memory component according to FIGS. 2 and 3,
FIG. 7: a schematic time-controlled illustration for an on- and a off-status for an organic electronic memory component according to FIGS. 2 and 3.
FIG. 8: an illustration of voltage and current for 100 cycles of sample according to exemplified embodiment 1.
FIG. 9: a schematic illustration of an electronic organic memory component, in the case of which electrode strips are formed on both sides of an organic layer arrangement in the design according to FIG. 3 or FIG. 5,
FIG. 10: a schematic illustration of a 3D-integration of several memory components according to FIG. 9,
FIG. 11: structural formulae of organic materials and
FIG. 12A-12F: various distinct hystereses for different voltages.



FIG. 1 shows a schematic illustration of a sequence of layers for an organic electronic memory component. Between an electrode 1 and a counterelectrode 2 are formed an electrode-specific charge-carrying transport layer 3, a counterelectrode-specific charge carrier-blocking layer 4 and disposed between said electrode-specific charge-carrying transport layer 3 and counterelectrode-specific charge carrier-blocking layer 4 a memory layer region 5 having a charge carrier-storing layer 6 and a further charge carrier-storing layer 7, between which charge carrier-storing layer 6 and further charge carrier-storing layer 7 is disposed a charge carrier barrier layer 8.
FIG. 2 shows a schematic illustration of energy levels for an electron-based memory component. FIG. 3 shows a schematic illustration of a sequence of layers for the memory component from FIG. 2.
An anode-specific electron blocking layer 12 is formed adjacently with respect to an anode 11. Following hereafter are an electron-storing layer 13, an electron barrier layer 14, a further electron-storing layer 15 and a doped cathode-specific electron transport layer 16 which abuts against a cathode 17. The electron-storing layers 13, 15 form potential wells using their respectively energetically lower LUMO levels. Where electrons find themselves in these wells it is difficult for said electrons to leave the potential wells again because they must first overcome the barrier formed by the electron-blocking layer 12 and electron barrier layer 14.
For an effective action of the memory component it is beneficial to use all organic materials in a highly pure form as can he achieved for example using gradient sublimation in a vacuum. This will avoid leakage currents which can occur through so-called trap-states. Sublimation-purified organic materials are beneficial for long-term storage of charges in the component.
The following structure has been chosen as a first exemplified embodiment:

    
    
        (11.1) Anode: indium-tin-oxide (ITO)
        (12.1) Blocking layer for electrons: 30 nm: NHT5
        (13.1) Storage layer for electrons: 60 nm C60 
        (14.1) Barrier layer for electrons: 10 nm: NHT5
        (15.1) Further storage layer for electrons: 50 nm C60 
        (16.1) Transport layer: 30 nm BPhen doped with caesium
        (17.1) Cathode: 100 nm aluminium
    
    


All layers are manufactured in a vaporisation process in a vacuum. In principle such layers can be produced by other methods also such as for example spin coating, blade coating or self-assembly.
The energy levels of the HOMO and LUMO levels are

    
    
        (11.1) ITO work function EA ̃−4.8 eV
        (12.1) NHT5:EvB1=−5.3 eV, ECB1 ̃−1.9 eV
        (13.1) C60: EVS1=−6.0 eV, ECS1 ̃−3.8 eV
        (14.1) NHT5:EvB2=−5.3 eV, ECB2 ̃−1.9 eV
        (15.1) C60: EVS2=−6.0 eV, ECS2 ̃−3.8 eV
        (16.1) BPhen: EVT1=−6.7 eV, ECT1 ̃−3.0 eV
        (17.1) Al: Ek=−4.3 eV
    
    


In the case of this arrangement the requirements ECB1>ECS1, ECB2>ECS1 and ECB2>ECS2 are met.
FIG. 6 shows a current-voltage curve for an organic electronic memory component according to FIGS. 2 and 3. A clear hysteresis behaviour is exhibited. The upper and the lower current-voltage curves represent a scan of −3V to 3V in 0.2V-steps and a reverse scan of 3V to −3V. If a read voltage of 0.8V is applied one obtains two different currents for the same voltage. An organic memory element based on two different statuses is thus realised.
FIG. 7 shows a schematic time-controlled illustration for an on- and a off-status for an organic electronic memory component according to FIGS. 2 and 3. These statuses are non-volatile. The on- and the off-statuses are also stable without an external electrical field.
FIG. 8 shows an illustration of 100 voltage and current cycles for an organic electronic memory component according to FIGS. 2 and 3 in the embodiment according to the formerly described exemplified embodiment. A write-voltage amounts to 5V, an erase-voltage 5V and a read-voltage 0.6V. A non-volatile re-definable memory component can he constructed therefore using this component.
The following materials which exhibit comparable properties can be used in place of the material NHT5 used in the preceding exemplified embodiment: MeO-TPD: N,N,N′,N′-tetrakis(4-methoxy-phenyl) benzidine, m-MTDATA: 4.4′0.4′′-tri(N-3-methylphenyl-N-phenyl-amino) triphenylamine or pentacene.
In a second exemplified embodiment for an electron-based memory component according to the FIGS. 2 and 3 the following construction is provided:

    
    
        (11.2) Anode: indium-tin-oxide (ITO)
        (12.2) Blocking layer for electrons: 30 nm: NHT5
        (13.2) Storage layer for electrons: 50 nm C60
        (14.2) Barrier layer for electrons: 10 nm: NHT5
        (15.2) Further storage layer for electrons: 30 nm C60
        (16.2) Transport layer: 30 nm: NET5 doped with NDN1(8%)
        (17.2) Cathode: 100 nm Aluminium
    
    


The cathode-specific electron transport layer 16 is made of NET5 (Novaled AG, Dresden). NDN1 (Novaled AG, Dresden) is used as a molecular dopant. In place of the material combination. NET5/NDN1 used in the previous exemplified embodiment the following materials can be used which exhibit comparable characteristics: Bphen (4,7-diphenyl-1,10-phenanthrolin) doped with Cs (see also first exemplified embodiment above), C60 doped with “Acridine Orange Base” or zinc phialocyanin doped with Ru(terpy)2.
In a third exemplified embodiment for an electron-based memory component according to the FIGS. 2 and 3 the following construction is provided:

    
    
        (11.3) Anode: indium-tin-oxide (ITO)
        (12.3) Blocking layer for electrons: 30 nm: NHT5
        (13.3) Storage layer for electrons: 80 nm C60
        (14.3) Barrier layer for electrons: 10 nm: NHT5
        (15.3) Further storage layer for electrons: 50 nm C60
        (16.3) Transport layer: 30 nm: BPhen doped with caesium
        (17.3) Cathode: 100 nm Aluminium
    
    


All layers are manufactured in a vaporisation process in a vacuum. In principle such layers can be produced by other methods also such as for example spin coating, blade coating or self-assembly. The energy levels of the HOMO and LUMO levels are

    
    
        (11.3) ITO work function EA ̃−4.8 eV
        (12.3) NHT5:E vB1=−5.3 eV, E CB1 ̃−1.9 eV
        (13.3) C60: EVS1=−6.0 eV, ECS1 ̃−3.8 eV
        (14.3) NHT5:EvB2=−5.3 eV, ECB2 ̃−1.9 eV
        (15.3) C60: EVS2=−6.0 eV, ECS2 ̃−3.8 eV
        (16.3) BPhen: EVT1=−6.7 eV, ECT1 ̃−3.0 eV
        (17.3) Al: Ek=−4.3 eV
    
    


This exemplified embodiment relates to a memory component which is constructed similarly to the component described in the first exemplified embodiment, wherein however in this case more than two memory statuses can be used. If the erase- and the write-voltages are reduced or enlarged there is no visible hysteresis behaviour between voltage changes from −1V to +1V and back. If the voltage is now changed from −5V to 5V and back, a clear hysteresis behaviour becomes evident (see also FIG. 12A to 12F). In this case the lower portion of the hysteresis curve shifts significantly. Different currents therefore ensue and thus different conductivity values for a particular read-voltage which is below the write- or erase-voltage. This can be exploited to store several statuses in this component. In this exemplified embodiment the different conductivity value statuses are also maintained without an external electrical field being applied such that a non-volatile memory performance is obtained.
In a fourth exemplified embodiment for an electron-based memory component according to the FIGS. 2 and 3 the following construction is provided:

    
    
        (11.4) Anode: indium-tin-oxide (ITO)
        (12.4) Blocking layer for electrons: 30 nm: NHT5
        (13.4) Storage layer for electrons: 60 nm C60 
        (14.4) Barrier layer for electrons: 10 nm: NHT5
        (15.4) Further storage layer for electrons: 50 nm C60 
        (16.4) Transport layer: 30 nm BPhen
        (17.4) Cathode: 100 nm Aluminium
    
    


This exemplified embodiment relates to a component which is constructed identically with respect to the construction described in the first exemplified embodiment, wherein however the electron transport layer 16 is not electrically doped. Such transport layers as such are prior art for holes and also for electrons, particularly from the field of organic LEDs. An electron injection layer made of linen is provided, electron injection layer which is disposed between the further storage layer (15.4) and the cathode (17.4).
The memory component according to the fourth exemplified embodiment is electron-based. Such a charge carrier injection can be provided also for hole-based memory components (see also explanations with respect to the FIGS. 4 and 5 below), for example using a substrate with high work function (between 4.5 and 6.0 eV). Alternatively in the case or the hole based memory component the charge-carrying transport layer may also comprise a good hole-conducting polymer, for example made of PEDOT, PEDOT:PSS or polyaniline.
In a fifth exemplified embodiment for an electron-based memory component according to the FIGS. 2 and 3 the following construction is provided:

    
    
        (11.5) Anode: indium-tin-oxide (ITO)
        (12.5) Blocking layer for electrons: 30 nm: NHT5
        (13.5) Storage layer for electrons: 60 nm C60 
        (14.5) Barrier layer for electrons: 10 nm: NHT5
        (15.5) Storage layer for electrons: 50 nm C60 
        (16.5-1) Transport layer: 30 nm Alq3 
        (16.5-2) Injection layer: 1 nm LiF
        (17.5) Cathode: 100 nm Aluminium
    
    


This exemplified embodiment relates to a memory component which differs from the preceding exemplified embodiment to the effect that the electron injection takes place using a thin electron injection layer (16.5-2) which thin electron injection layer (16.5-2) is disposed between the cathode and electron transport layer (16.5-1). Such transport layers as such are prior art for holes and also for electrons, for example from the field of organic LEDs. A layer of lithium-fluoride (LiF) of a few angstroms thickness is used in the preceding exemplified embodiment, which layer of lithium-fluoride (LiF) is followed by the electron transport layer of Alq3.
The memory component according to the fifth embodiment is electron-based. Such a charge carrier injection is also possible for hole-based components, for example using the ITO layer sequence (anode)/WO3/hole transport layer . . . , wherein in this case WO3 acts as the injection layer. Also other hole injection materials can be used, tor example conductive polymers PEDOT:PSS.
FIG. 4 shows a schematic illustration of energy levels for a hole-based memory component. FIG. 5 shows a schematic illustration of a sequence of layers for the memory component from FIG. 4.
An anode-specific, electrically-doped hole transport layer 22 is formed on an anode 21. This is followed by a hole-storing layer 23, a hole barrier layer 24, a further hole-storing layer 25 and a hole-blocking layer 26, which hole-blocking layer 26 abuts against a cathode 27. The two hole-storing layers 23, 25 use their respectively energetically higher HOMO levels to form potential wells for holes. If holes find themselves in these wells it is difficult for said holes to escape from the wells since first they need to overcome a barrier. A combination of MeO-TPD:F4-TCNQ, whose use as layer material as such is prior art from the field of organic LEDs, can be used for example as a doped hole transport layer.
FIG. 9 shows a schematic illustration of an electronic organic memory component in the case of which electrode strips 91 are formed on both sides, specifically on the top and underneath, of an organic layer arrangement 90 in the embodiment according to FIG. 3 or FIG. 5.
FIG. 10 shows a schematic illustration of a 3D-integration of a plurality of memory components according to FIG. 9 to form a memory component arrangement.
The features of the invention disclosed in the present description, the claims and drawings can be of significance both individually and in any combination in their different embodiments for the realisation of the invention.

## Claims

1. An organic electronic memory component comprising an electrode and a counterelectrode, and an organic layer arrangement disposed between said electrode and counterelectrode and in electrical contact therewith, wherein the organic layer arrangement comprises the following organic layers: an electrode side charge carrier transport layer and a counterelectrode side charge carrier-blocking layer and disposed between said electrode side charge carrier transport layer and counterelectrode-side charge carrier-blocking layer a memory layer region comprising a first charge carrier-storing layer and a second charge carrier-storing layer between which first charge carrier-storing layer and a second charge carrier-storing layer is disposed a charge carrier barrier layer, wherein the electrode is a cathode and the counterelectrode is an anode, the electrode-side charge-carrying transport layer is a cathode-side electron transport layer, the counterelectrode-side charge carrier-blocking layer is an anode-side electron-blocking laver, the first charge carrier-storing layer is an electron-storing layer, the second charge carrier-storing layer is a second electron-storing layer, and the charge carrier barrier layer is an electron barrier layer, and wherein
the LUMO level of the cathode-side electron transport layer lies energetically higher than the LUMO level of the first electron-storing layer, which first electron-storing layer is disposed adjacently to the cathode-side electron transport layer;
the LUMO level of the anode-side electron-blocking layer lies energetically higher than the LUMO level of the second electron-storing layer, which second electron-storing layer is disposed adjacently to the anode-side electron-blocking layer; and
the LUMO level of the first electron-storing layer and the second electron-storing layer lies energetically lower than the LUMO level of the electron barrier layer.

2. A memory component according to claim 1, wherein the electrode side charge-carrying transport layer is electrically doped.

3. The memory component according to claim 1, wherein a charge carrier injection layer is disposed between the electrode and the electrode side charge-carrying transport layer.

4. The memory component according to claim 1, wherein the LUMO level of the anode side electron-blocking layer lies energetically higher than the respective LUMO level of the following layers: the first electron-storing layer, the second electron-storing layer, and the cathode side electron transport layer.

5. The memory component according to claim 1, wherein the LUMO level of the first electron-storing layer or the LUMO level of the second electron-storing layer lies energetically around 0.1 eV to around 3.0 eV lower than the LUMO level of the anode-side electron-blocking layer.

6. An organic electronic memory component comprising an electrode and a counterelectrode, and an organic layer arrangement disposed between said electrode and counterelectrode and in electrical contact therewith, wherein the organic layer arrangement comprises the following organic layers: an electrode-side charge carrier transport layer and a counterelectrode-side charge carrier-blocking layer and disposed between said electrode-side charge carrier transport layer and counterelectrode-side charge carrier-blocking layer a memory layer region comprising a first charge carrier-storing layer and a second charge carrier-storing layer between which first charge carrier-storing layer and a second charge carrier-storing layer is disposed a charge carrier barrier layer, wherein the electrode is embodied as an anode, the counterelectrode is embodied as a cathode, and the electrode-side charge carrier transport layer is an anode-side hole transport layer, the counterelectrode-side charge carrier-blocking layer is a cathode-side hole-blocking layer, the first charge carrier-storing layer is a hole-storing layer, the second charge carrier-storing layer is a second hole-storing layer and the charge carrier barrier layer is a hole-barrier layer, and wherein
the HOMO level of the anode side hole transport layer lies energetically higher than the HOMO level of the first hole-storing layer, which first hole-storing layer is disposed adjacently to the anode side hole transport layer;
the HOMO level of the cathode side hole-blocking layer lies energetically higher than the HOMO level of the second hole-storing layer, which second hole-storing layer is disposed adjacently with respect to the cathode side hole-blocking layer; and
the HOMO level of the first hole-storing layer and second hole storing layer lies energetically higher than the HOMO level of the hole barrier layer.

7. The memory component according to claim 6, wherein the HOMO level of the cathode side hole-blocking layer lies energetically higher than the respective HOMO levels of the following layers: the first hole-storing layer, the second hole-storing layer and, the anode side hole transport layer.

8. The memory component according to claim 6, wherein the HOMO level of the first hole-storing layer or the HOMO level of the second hole-storing layer lies energetically around 0.1 eV to around 3.0 eV lower than the HOMO level of the cathode side hole-blocking layer.

9. The memory component according claim 1, wherein an electrical resistance via the electrode, the counterelectrode, and the organic layer arrangement in an on-status and an off-status respectively lies in a range between around 1Ohm to around 100 MOhm.

10. The memory component according to claim 1, wherein the ratio of the electrical resistance via the electrode, the counterelectrode and the organic layer arrangement in the on-status with respect to the electrical resistance in the off-status is greater than 1:1.5.

11. A memory component arrangement comprising several organic memory components according to claim 1 disposed in a stack, wherein a common intermediate electrode is disposed between mutually oppositely disposed memory components, wherein the common intermediate electrodes comprise electrode strips.

12. The memory component arrangement according to claim 11, wherein the external electrodes of the stack comprise electrode strips.

13. The memory component according claim 9, wherein an electrical resistance via the electrode, the counterelectrode, and the organic layer arrangement in an on-status and an off-status respectively lies in a range between around 0.1 kOhm to around 100 kOhm.