# Patent

## Title
Laser tube with distributed taps for a gas discharge RF-excited laser

## Abstract

A laser device is provided. The laser device includes a laser tube, and power devices distributed uniformly along the length of the laser tube.

## Background
FIELD OF THE INVENTION
The invention is related to a radio-frequency (RF)-excited gas discharge lasers, and in particular but not exclusively, to laser tube power devices distributed uniformly along the length of the laser tube.
BACKGROUND OF THE INVENTION
A radio frequency (RF)-excited gas laser produces laser energy when a gas medium within the laser is excited by the application of RF energy between a pair of electrodes. One example of a gas laser is a carbon dioxide laser. RF-excited gas lasers have found many applications because of their compact size, reliability, and relative ease of manufacture.



BRIEF DESCRIPTION OF THE DRAWINGS
Non-limiting and non-exhaustive embodiments of the present invention are described with reference to the following drawings, in which:
FIG. 1A shows a block diagram of an embodiment of a laser device;
FIG. 1B shows a block diagram of an embodiment of the laser device of FIG. 1A;
FIG. 2A illustrates a block diagram of a portion of an embodiment of the laser device of FIG. 1B;
FIG. 2B shows a block diagram of a portion of an embodiment of the laser device of FIG. 1A or 1B;
FIG. 3 illustrates a block diagram of an embodiment of the portion of FIG. 2B;
FIG. 4 shows a block diagram of a portion of an embodiment of the laser device of FIG. 1A;
FIG. 5 schematically illustrates of an embodiment of the portion of FIG. 4;
FIG. 6A shows a block diagram of an embodiment of the laser device of FIG. 1A or 1B;
FIG. 6B shows a three-dimensional perspective of an embodiment of the laser device; and
FIG. 7 illustrates a block diagram of an embodiment of the laser device of FIG. 6, arranged in accordance with aspects of the present invention.



DETAILED DESCRIPTION
Various embodiments of the present invention will be described in detail with reference to the drawings, where like reference numerals represent like parts and assemblies throughout the several views. Reference to various embodiments does not limit the scope of the invention, which is limited only by the scope of the claims attached hereto. Additionally, any examples set forth in this specification are not intended to be limiting and merely set forth some of the many possible embodiments for the claimed invention.
Throughout the specification and claims, the following terms take at least the meanings explicitly associated herein, unless the context dictates otherwise. The meanings identified below do not necessarily limit the terms, but merely provide illustrative examples for the terms. The meaning of “a,” “an,” and “the” includes plural reference, and the meaning of “in” includes “in” and “on.” The phrase “in one embodiment,” as used herein does not necessarily refer to the same embodiment, although it may. As used herein, the term “or” is an inclusive “or” operator, and is equivalent to the term “and/or,” unless the context clearly dictates otherwise. The term “based, in part, on”, “based, at least in part, on”, or “based on” is not exclusive and allows for being based on additional factors not described, unless the context clearly dictates otherwise. The term “coupled” means at least either a direct electrical connection between the items connected, or an indirect connection through one or more passive or active intermediary devices. The term “circuit” means at least either a single component or a multiplicity of components, either active and/or passive, that are coupled together to provide a desired function. The term “signal” means at least one current, voltage, charge, temperature, data, or other signal. Where either a field effect transistor (FET) or a bipolar junction transistor (BJT) may be employed as an embodiment of a transistor, the scope of the words “gate”, “drain”, and “source” includes “base”, “collector”, and “emitter”, respectively, and vice versa. Further, where an RF power grid tube may be used in place of a transistor, the scope of the words “grid”, “plate”, and “cathode” includes “gate”, “drain”, and “source” respectively, and vice versa.
Briefly stated, the invention is related to a laser device. The laser device includes a laser tube, and power devices distributed uniformly along the length of the laser tube
FIG. 1A shows a block diagram of an embodiment of laser device 101. Laser device 101 includes laser tube 110, and oscillator circuits 160. Laser tube 110 includes internal inductive coils L1.
Laser tube 110 is a radio frequency (RF)-excited gas discharge laser tube. Virtually any RF-excitable gas discharge laser tube may be used for laser tube 110.
It is important to note that the rectangle 110 in FIG. 1A represents the laser tube. Internal inductive coils L1 are distributed along the length of laser tube 101. In one embodiment, internal inductive coils L1 are distributed uniformly along the length of laser tube 101. Each of the internal inductive coils L1 is coupled between a separate corresponding pairs of taps 190. In the embodiment illustrated in FIG. 1A, each of the oscillator circuits 160 is coupled to a separate corresponding pairs of taps 190. Each pair of taps 190 includes a first tap that is coupled to the first electrode E1 (not shown in FIG. 1A) and a second tap that is coupled to the first electrode E2 (not shown in FIG. 1A). Also, in this embodiment, each of the oscillator circuits 160 provides RF power to at least one of the taps that it is coupled to. RF power to the laser tube is substantially increased by have multiple oscillators circuits 160 distributed along the length of laser tube 110, rather than just one. The laser structure is resonant to the operating frequency fo of inductive coils L1.
In some embodiments, one of more of the oscillator circuits 160 may be replaced with RF power amplifiers.
FIG. 1B shows a block diagram of laser device 101B. Laser device 101B is similar to laser device 101 of FIG. 1A, albeit different in some ways. Laser device 101B includes laser tube 110B, oscillator circuits 160B, and reactive components 170.
The internal inductive coils L1 are distributed along the length of laser tube 101. In one embodiment, the internal inductive coils L1 are distributed uniformly along the length of laser tube 110B. In some embodiments, one electrode of the electrode pair E1 and E2 (not shown in FIG. 1B) is coupled to ground and the other is coupled to one of the distributed taps. In other embodiments, one electrode of the electrode pair E1 and E2 is coupled to one of the distributed taps of a pair, and the other electrode is coupled to the other taps of the pair.
Reactive components 170 are mounted external to laser tube 110B. In some embodiments, the reactance of each reactive component 170 may be pre-selected so as to compensate for the net reactance of the each oscillator circuit 160B, at the operating frequency fo of laser tube 110B. In some embodiments, the operating frequency fo of laser tube 110B is equal to the resonant frequency of laser tube 110B. In other embodiments, the operating frequency fo of laser tube 110B is relatively close to but slightly different than the resonant frequency of laser tube 110B.
In some embodiments, each of the oscillator circuits 160B is net inductive. In these embodiments, each reactive component 170 may be an adjustable capacitor. In other embodiments, each of the oscillator circuits 160B is net capacitive. In these embodiments, each of the reactive components 170 may be an inductor.
In some embodiments, one of more of the oscillator circuits 160B may be replaced with RF power amplifiers.
FIG. 2A shows a block diagram of an embodiment of a portion (100) of an embodiment of laser device 101B of FIG. 1B. Portion 200 includes laser tube 210, oscillator circuitry 260, and reactive component 270. The portion of laser tube 210 shown includes electrode E1, electrode E2, discharge region 220, and inductor circuit L1.
Laser tube 210 has a ground input GND, and a first tap Tap1 connected to node N1. In one embodiment, as illustrated in FIG. 2, node N2 is GND. Electrode E1 is connected to node N1, and electrode E2 is connected to node N2. Also, there is a discharge region 220 between electrode E1 and electrode E2. A gas load, such as carbon dioxide or other type of lasing gas, fills discharge region 220 during operation of the laser. When excited by an RF signal provided by oscillator circuitry 260, an electric field develops between electrode E1 and electrode E2, causing plasma breakdown and therefore a discharge in the gas load in discharge region 220. Inductor circuit L1 includes one or more inductive coils that are each in parallel with the discharge region 210.
Oscillator circuitry 260 forms part or all of a power oscillator that provides RF energy to laser tube 210. The laser structure is resonant to the operating frequency fo of the coils (e.g. inductor L1). The resonant circuit is electrically connected to a feedback loop of a power device (not shown in FIG. 2A) that is part of oscillator circuitry 260.
Reactive component 270 is coupled in parallel with discharge region 220. In one embodiment, as illustrated in FIG. 1A, one electrode is coupled to tap Tap1 to receive RF power, and the other tap electrode is coupled to ground.
Laser tube 210 has a capacitance present between node N1 and the housing of the laser tube 210. This capacitance may be, at the very least, parasitic due to insulating structural supports for the electrodes and the free space between the electrodes and the housing. In some embodiments, this capacitance may be deliberately increased to increase the Q-factor of the laser tube. The parallel combination of this capacitance and L1 determines the resonant frequency of laser tube 210.
FIG. 2B shows a block diagram of an embodiment of portion 200B, which may be employed as an embodiment of portion 200 of FIG. 2A. Portion 200B is similar to portion 200, except that laser tube 210B of FIG. 2B has two taps for the electrode pair E1 and E2, and electrode E2 is coupled to second tap Tap2 rather than ground.
Like in portion 200, reactive component 270 is coupled in parallel with discharge region 220. However, in portion 200B, since the electrode E2 is coupled to the second tap, reactive component 270 is coupled between the first tap Tap1 and the second tap Tap2.
FIG. 3 illustrates a block diagram of an embodiment of portion 300, which may be employed as an embodiment of device 200B of FIG. 2A. Portion 300 further includes switching regulator 344, filters 352 and 359, capacitor 346, enclosure 348, and switching regulator 344. In portion 300, the oscillation circuitry includes inductors L2, L4, 332, and 316; capacitors C2, 318, 319, 339, and 349; cable 324; and resistors 326, 328, and 334.
The parallel resonant circuit of FIG. 3 is made up of the capacity to ground of each of the two discharge electrodes and one or more shunt inductances placed across the discharge section, as a lumped constant or transmission line structure. A lasing gas mixture, containing, for example, CO or CO2, is contained within the discharge section.
Cable 324 of FIG. 3 represents a quarter wave impedance transformer made from coaxial cable to transform the base drive impedance of the transistor. This splits about one-tenth of the output power back to the base of transistor Q0 in a feedback mode.
Resistors 26 and 28 provide bias signal Vbias1 for quiescent bias in order to provide the initial gain for the start of oscillations. These can be wire-wound resistances doubling as RF chokes. Capacitor 339, inductor 332, and resistor 334 comprise a damping network which prevents parasitic oscillations at low frequencies by providing strong negative feedback. The network has essentially no effect at the operating frequency. Coil L2 is an RF choke at the operating frequency and applies DC voltage to transistor Q0.
Upon applying VO from switching regulator 344, transistor Q0 operates to provide a relatively large amount of gain at the resonant frequency of the laser. Oscillations start in the oscillator circuit and build up until breakdown of the lasing gas occurs within the discharge section.
In one embodiment, portion 300 includes switching regulator 344, which serves as an AC to DC power converter and can be of the conventional simple series inductance, step-down type. The regulator input and output are not isolated and the entire RF circuit rides on the line voltage. The capacitors C2 and 346 provide grounding for the RF voltage without causing excessive line current ground leakage because of the high operating frequency.
Enclosure 348 for the portion 300 provides RF shielding, with feedthrough filters 359 and 352 providing lead filtering.
Portion 300 is an embodiment of a portion of circuit 200B FIG. 1B in which the oscillator circuitry 160 is an entire oscillator. However, in other embodiments, as illustrated in FIG. 4, the laser tube itself may form the feedback pi-network of the oscillator.
FIG. 4 shows a block diagram of an embodiment of a portion (400) of an embodiment of laser device 100 of FIG. 1A. Portion 400 includes laser tube 410, additional oscillator circuitry, and RF choke 430. In one embodiment, the oscillator circuitry includes capacitor C2, capacitor C3, and transistor M0. In other embodiments, the oscillator circuitry may include more or less components. For example, in some embodiments, additional passive components (not shown in FIG. 4) may be included in series with capacitor C3. Similarly, in some embodiments, additional components, such as an inductor (not shown in FIG. 4), may be included in series with capacitor C2. In another embodiment, capacitor C2 is replaced with an inductor. Transistor M0 may be replaced with a different type of power device. These variations and others are within the scope and spirit of the invention.
Laser tube 410 has a ground input GND, a first tap Tap1 connected to node N1, and a second tap Tap2 connected to node N2. Electrode E1 is connected to node N1, and electrode E2 is connected to node N2. Also, there is a discharge region 420 between electrode E1 and electrode E2. A gas load, such as carbon dioxide or other type of lasing gas, fills discharge region 420 during operation of the laser. When excited by an RF signal provided by portion 400, an electric field develops between electrode E1 and electrode E2, causing plasma breakdown and therefore a discharge in the gas load in discharge region 420.
Capacitance C0 represents the lumped equivalent capacitance at node N1, and capacitance C1 represents the lumped equivalent capacitance at node N2.
Portion 400 is arranged as a classic Colpitts oscillator, except that laser tube 410 is the feedback pi-network of the Colpitts oscillator. Laser tube is accordingly arranged for self-oscillation for RF excitation where laser tube 410 is part of the oscillator.
RF choke 430 provides DC voltage at its output at the operating frequency. RF choke 430 is arranged to allow DC current to flow to the drain of transistor M0 without letting any of the RF current to flow backward into the power supply. Capacitor C2 is a DC blocking capacitor. Capacitor C3 is also a DC blocking capacitor, and capacitor C3 also acts as a feedback circuit. Capacitor C3 provides a feedback signal to the gate of transistor M0 based on output the signal at Tap2, but prevents full power from going to the gate of transistor M0.
Although transistor M0 is used as the active device in one embodiment, in other embodiments, a different type of active device may be employed. For example, instead of a transistor, a tube such as a triode, tetrode, a pentode, or the like may be used.
FIG. 5 schematically illustrates of an embodiment of portion 500, which may be employed as an embodiment of portion 400 of FIG. 4. Portion 500 further includes capacitor C2, capacitor C3, transistor M0, inductor L4, inductor L5, transistor M1, capacitor C4, and capacitor C5, RF chokes 530 and 531, resistors R2-R5, adjustable resistors R6 and R7, and capacitors C10-C12 and C15-C17. In one embodiment, reactive component 570 includes external inductive coil L6. RF choke 530 includes inductor L2. RF choke 531 includes inductor L3. Phase-shifting network 540 includes capacitor C13, capacitor C14, and transmission line TL1. Phase-shifting network 541 includes capacitor C18, capacitor C19, and transmission line TL2. Capacitor C2 includes capacitors C2a-C2c. 
Resistors R2, R4, adjustable resistor R6, and capacitor C11 operate to provide bias voltage Vbias1 from voltage VDC to bias the gate of transistor M0. Similarly, Resistors R3, R5, adjustable resistor R7, and capacitor C17 operate to provide bias voltage Vbias2 from voltage VDC to bias the gate of transistor M1. Bias voltages Vbias1 and Vbias2 are applied to the gate of transistors M0 and M1 respectively at a voltage close to the threshold voltage of the transistor to ensure that oscillation begins.
Capacitance C0 represents the lumped equivalent capacitance at node N1, and capacitance C1 represents the lumped equivalent capacitance at node N2. Oscillator 500 is arranged as a dual Colpitts oscillator, except that laser tube 510 is the feedback pi-network of the dual Colpitts oscillator.
RF chokes 530 and 531 each provide DC voltage at its output at the operating frequency. RF choke 530 is arranged to allow DC current to flow to the drain of transistor M0 without letting any of the RF current to flow backward into the power supply. Capacitors C2 and C4 are DC blocking capacitors. Capacitor C3 and C5 are also DC blocking capacitors, and act as feedback circuits. Capacitor C3 provides a feedback signal to the gate of transistor M0 based on output the signal at Tap2, but prevents full power from going to the gate of transistor M0. Similarly, capacitor C5 provides a feedback signal to the gate of transistor M1 based on output the signal at Tap1, but prevents full power from going to the gate of transistor M1.
Although transistors M0 and M1 are used as the active devices in one embodiment, in other embodiments, a different type of active device may be employed, such as a vacuum tube triode, tetrode, pentode, or the like.
A simple Colpitts oscillator has a phase shift of 180 degrees. To achieve class E operation, a phase of 196 degrees is employed. In portion 500, phase-shifting network 540 includes reactive components for creating an overall phase shift of approximately 196 degrees as measured between the drain and gate of one of the active devices the active device (e.g. transistor M0) of portion 500. Phase-shifting network 541 includes reactive components for creating an overall phase shift of approximately 196 degrees as measured between the drain and gate of the other active device (e.g. transistor M1) of portion 500.
Inductor L6 is mounted external to laser tube 510. Inductor L6 is adjustable while the laser is operating. In one embodiment, L6 is a standard inductor with an inductance that may be adjusted by physically compressing or stretching the coils, thus allowing the inductance to be adjusted by about 5% to 10% from the nominal inductance of the coil. In other embodiments, the inductance is adjustable in other ways.
The inductance value of inductor circuit L1 may vary from part-to-part. However, inductor L1 is inside the laser tube box 510 and is therefore inaccessible after laser tube 510 has been assembled. However, external inductor L6 is accessible outside of the laser tube, and therefore may be used to fine tune the total equivalent inductance between nodes N1 and N2, in order to fine-tune the frequency and the longitudinal RF voltage distribution along the gas discharge length of the laser for optimal laser performance. Taps Tap1 and tap2 may be placed on the laser tube 510 in such a way that, when the inductance between nodes N1 and N2 is properly fine-tuned by adjusting inductor L6, a uniform voltage standing wave occurs in laser tube 510. This results in improved laser performance since the electric field is therefore substantially the same everywhere in laser tube 510.
FIG. 6A shows a block diagram of an embodiment of laser device 600, which may be employed as an embodiment of laser device 101 of FIG. 1. As previously discussed, the laser tube includes additional RF connections (i.e. taps) 690 along the length of the laser tube at positions that correspond to the location of internal inductors. In this embodiment, the oscillators lock together at the one frequency although not necessarily at the same phase. FIG. 6A illustrates an embodiment with a single Colpitts oscillator at each pair of taps 690.
Internal inductive coils L1 are distributed along the length of laser tube 610. In one embodiment, internal inductive coils L1 are distributed uniformly along the length of laser tube 610. Each of the reactive components 670 is coupled between a separate corresponding pairs of taps 690. Each pair of taps 690 includes a first tap that is coupled to the first electrode E1 (not shown in FIG. 6A) and a second tap that is coupled to the first electrode E2 (not shown in FIG. 6A). In the embodiment illustrated in FIG. 6, each of the oscillator circuits 660 is coupled to a separate corresponding pairs of taps. Also, in this embodiment, each of the oscillator circuits 660 provides RF power to at least one of the taps that it is coupled to. RF power to the laser tube is substantially increased by have multiple oscillators circuits 660 distributed along the length of laser tube 610, rather than just one. The laser structure is resonant to the operating frequency fo of inductive coils L1.
In some embodiments, one of more of the oscillator circuits 660 may be replaced with RF power amplifiers.
FIG. 6B shows a three-dimensional perspective of an embodiment of laser device 600.
FIG. 7 illustrates an embodiment of laser device 700, which may be employed as an embodiment of laser device 600 of FIG. 6A. FIG. 7 illustrates an embodiment with a dual Colpitts oscillator at each pair of taps 790.
In one embodiment, the reactance of each of the adjustable reactive devices 770 may be pre-determined according to the following calculations.
In this example, Ltap, is the inductance of each of coil L1 that is placed between the taps of a dual power oscillator on a laser tube to produce a uniform voltage distribution along the length of the tube for RF operating frequency, fo, while compensating for the dual power oscillator circuit capacitances Cosc that are in shunt with each tap. The total capacitance measured at either tap of the laser tube is Ctap. (Each of the lumped capacitances C0 and C1 is Ctap/2; the parallel capacitance of C0 and C1 is measured as Ctap). The resonant frequency of the tube with only the N internal coils and none of the M dual power oscillators installed is ftap. The inductance value of each of the N internal coils is Lcoil. Adding M coils of inductance value, Lcoil, across the taps would raise the resonant frequency to fo if the capacitances, Cosc, were not present. Therefore an additional inductance, Losc, must be added across each of the taps as well to eliminate the power oscillator circuit capacitance. Capacitances Coss and Ciss represent the output and input capacitance, respectively, of each of the power devices. In one embodiment of laser device 700, an oscillator as shown in FIG. 6A is at each of the taps. For example, in FIG. 5, Coss is the capacitance at the drain of transistor M0, Coss is also the capacitance at the drain of transistor M1, Ciss is the capacitance at the gate of transistor M0, and Ciss is also the capacitance at the gate of transistor M1. In one example embodiment, N=4 and M=3.



  
    
      f
      tap
    
    :=
    
      
        f
        o
      
      ·
      
        
          N
          
            N
            +
            M
          
        
      
    
  




  
    
      L
      coil
    
    :=
    
      N
      ·
      
        
          [
          
            
              
                (
                
                  2
                  ·
                  π
                  ·
                  
                    f
                    tap
                  
                
                )
              
              2
            
            ·
            
              
                C
                tap
              
              4
            
          
          ]
        
        
          -
          1
        
      
    
  



As previously discussed, Lcoil is the inductance value of each of the N individual coils. Lcoil is pre-determined by the designer as the having an inductance corresponding to the reactance (at frequency ftap) conjugate to the total equivalent capacitance inside the tube at frequency ftap. The parallel combination of the N coils is resonant with the series combination of C0 and C1 at frequency ftap. The capacitance at C0 and C1 is Ctap/2 each, and the series combination of C0 and C1 is Ctap/4.



  
    
      C
      osc
    
    :=
    
      
        
          
            C
            2
          
          ·
          
            (
            
              
                C
                12
              
              +
              
                C
                oss
              
            
            )
          
        
        
          
            C
            2
          
          +
          
            (
            
              
                C
                12
              
              +
              
                C
                oss
              
            
            )
          
        
      
      +
      
        
          
            C
            29
          
          ·
          
            (
            
              
                C
                17
              
              +
              
                C
                ⁢
                
                  
                
                ⁢
                8
              
              +
              
                C
                iss
              
            
            )
          
        
        
          
            C
            29
          
          +
          
            (
            
              
                C
                ⁢
                
                  
                
                ⁢
                17
              
              +
              
                C
                ⁢
                
                  
                
                ⁢
                18
              
              +
              
                C
                iss
              
            
            )
          
        
      
    
  




  
    
      L
      osc
    
    :=
    
      
        [
        
          
            
              (
              
                2
                ·
                π
                ·
                
                  f
                  o
                
              
              )
            
            2
          
          ·
          
            
              C
              osc
            
            2
          
        
        ]
      
      
        -
        1
      
    
  



Cosc is the total equivalent capacitance of each single oscillator. The total equivalent capacitance of the dual oscillator is Cosc/2. If only a single Colpitts oscillator were used, the total equivalent capacitance of the oscillator would be simply Cosc. The inductance Losc is pre-determined as the inductance corresponding to the reactance conjugate of total equivalent capacitance of the dual oscillator at the operation frequency fo.
In one embodiment of the invention, Losc as given in the above equation is the inductance that is used for inductor L6.
In other embodiments, external inductors L6 may also be used as substitute positions for locations of some of the inductors L1 internal to the laser tube. For example, in the embodiment described above, there are four internal coils and three external inductors. The external inductor values may be selected in such a way that they function in a similar manner to the internal inductors, and also provide compensation for the oscillator circuit. In this way, even though there are only four internal coils, it is as if there are seven internal coils. The four internal coils are evenly spaced within the laser tube. Each pair of taps, with the corresponding external inductor L6, is placed evenly between two adjacent pairs of internal coils, which amounts to seven uniformly distributed coils, each having an inductance of Lcoil.
In this embodiment, the inductance Ltap for each inductor L6 is pre-determined as the parallel combination of Lcoil and Losc.




  
    L
    tap
  
  :=
  
    
      
        L
        osc
      
      ·
      
        L
        coil
      
    
    
      
        L
        osc
      
      +
      
        L
        coil
      
    
  




In this embodiment, the Ltap value calculated above is used as the nominal inductance for each of the inductors L6. During operation of the laser, the inductors L6 are further adjusted to achieve maximum laser output.
The above specification, examples and data provide a description of the manufacture and use of the composition of the invention. Since many embodiments of the invention can be made without departing from the spirit and scope of the invention, the invention also resides in the claims hereinafter appended.

## Claims

1. A device for an RF-excited gas laser, comprising:
a laser tube, including:
a first electrode;
a second electrode;
a discharge region disposed between the first and second electrode;
a plurality of pairs of taps, wherein each pair of the plurality of pairs of taps includes a first tap of the pair that is coupled to the first electrode, and a second tap of the pair that is coupled the second electrode, wherein the plurality of pairs of taps are distributed along a length of the laser tube; and

a plurality of power devices, wherein a first power device of the plurality of power devices is coupled to the first electrode and the second electrode via a first pair of taps of the plurality of taps, the first power device of the plurality of power devices is arranged to provide radio-frequency (RF) power to at least the first tap of the first pair of taps of the plurality of taps, a second power device of the plurality of power devices is coupled to the first electrode and the second electrode via a second pair of taps of the plurality of taps, and wherein the second power device of the plurality of power devices is arranged to provide radio-frequency (RF) power to at least the first tap of the second pair of taps of the plurality of taps.

2. The device of claim 1, wherein the pairs of taps of the plurality of pairs of taps are substantially uniformly distributed along the length of the laser tube.

3. The device of claim 1, wherein
the laser device further includes:
a plurality of internal inductive coils, wherein each internal inductive coil of the plurality of internal inductive coils is coupled between the first electrode and the second electrode.

4. The device of claim 1, further comprising:
a plurality of external inductive coils, wherein each external inductive coil of the external inductive coils is mounted on the laser tube external to the laser tube, and wherein each of the external inductive coils is coupled between the first electrode and the second electrode.

5. The device of claim 1, further comprising a plurality of power oscillators, wherein each power oscillator of the plurality of power oscillators includes at least one of the power devices of the plurality of power devices.

6. The device of claim 5, wherein at least one power device of plurality of power devices is an RF power amplifier.

7. The device of claim 5, wherein each of the power oscillators includes a Colpitts oscillator that includes the laser tube as the feedback pi network of the Colpitts oscillator.

8. The device of claim 5, wherein each of the power oscillators is arranged to operate class E.

9. A method for laser generation, comprising:
generating a laser by providing RF power to each tap of a plurality of pairs of taps of a gas laser tube, wherein the plurality of pairs of taps are distributed along the length of the gas laser tube, and each pair of the plurality of pairs of taps includes a first tap that is coupled to a first electrode, and a second tap that is coupled to a second electrode, wherein providing RF power includes providing RF power via at least a first power device and a second power device coupled to each of the first electrode and the second electrode via corresponding pairs of taps.

10. The method of claim 9, wherein the pairs of taps are distributed substantially uniformly along the length of the gas laser tube.

11. The method of claim 9, further comprising:
while the laser is being generated, at an operating frequency of the laser, adjusting a reactance of each reactive component of a plurality of reactive components that is external to the laser tube, wherein each of the plurality of reactive components is coupled between a separate corresponding pair of the plurality of taps.

12. The method of claim 11, wherein each reactive component of the plurality of reactive components includes an inductive coil, and wherein adjusting the reactance component includes at least one of compressing each of the inductive coils or stretching each of the inductive coils.

13. The method of claim 11, wherein adjusting the reactance includes adjusting the reactance until longitudinal gas discharged uniformity of the gas laser tube is substantially optimized.