Chapter 6: Electronics Industry Emissions

2006 IPCC Guidelines for National Greenhouse Gas Inventories 6.1 

# CHAPTER 6

ELECTRONICS INDUSTRY EMISSIONSVolume 3: Industrial Processes and Product Use

6.2 2006 IPCC Guidelines for National Greenhouse Gas Inventories 

### Authors
Scott Bartos (USA) Laurie S. Beu (USA), C. Shepherd Burton (USA), Charle s L. Fraust (USA), Francesca Illuzzi (Italy), Michael T. Mocella (USA) and Sebastien Raoux (France/USA)



### Contributing Authors
Guido Agostinelli (Italy), Erik Alsema (Netherlands), Seung-Ki Chae (Republic of Korea), Vasilis M. Fthenakis (USA) , Joseph Van Gompel (USA) , Hideki Nishida (Jap an), Takayuki Oogoshi (Japan) and Kurt T. Werner (USA)Chapter 6: Electronics Industry Emissions

2006 IPCC Guidelines for National Greenhouse Gas Inventories 6.3 

# Contents

6 Electronics Indust ry Emissions ................................................................................................. ....................6.5

6.1 Introduc tion................................................................................................................... ........................6.5

6.2 Methodologica l issu es.......................................................................................................... .................6.6

6.2.1 Choice of method ............................................................................................................... ...........6.6

6.2.1.1 Etching and CVD cleaning for semiconductors, liq uid crystal displays, and photovoltaics....6.6

6.2.1.2 Heat transfer fluids ........................................................................................................... .....6.13

6.2.2 Choice of emissi on factors ..................................................................................................... .....6.15

6.2.2.1 Etching and CVD cleaning for semiconductors, liquid crystal displays, and photovoltaics..6.15

6.2.2.2 Heat transfer fluids ........................................................................................................... .....6.22

6.2.3 Choice of ac tivity data........................................................................................................ .........6.22

6.2.4 Completeness ................................................................................................................... ...........6.24

6.2.5 Developing a consis tent time series............................................................................................ .6.25

6.3 Uncertainty assessment ......................................................................................................... ..............6.25

6.3.1 Emission factor uncertainties .................................................................................................. ....6.25

6.3.2 Activity data uncertainties.................................................................................................... .......6.26

6.4 Quality Assurance/Quality Control (QA/QC ), Reporting and Documentation ...................................6.29

6.4.1 Quality Assurance/Quality Control ( QA/QC) .............................................................................6.29

6.4.2 Reporting and Do cumentation.................................................................................................... .6.29

References .................................................................................................................... .................................6.31



# Equations

Equation 6.1 Tier 1 method for estimati on of the set of FC emissions.......................................................6.9 Equation 6.2 Tier 2a method fo r estimation of FC emissions...................................................................6. 10 Equation 6.3 By-product emissions of CF 4 ...............................................................................................6.10 Equation 6.4 By-product emissions of C 2 F 6 .............................................................................................6.10 Equation 6.5 By-product emissions of chf 3 ...............................................................................................6.10 Equation 6.6 By-product emissions of C 3 F 8 .............................................................................................6.10 Equation 6.7 Tier 2b method for estimation of FC emissions ..................................................................6.1 1 Equation 6.8 By-product emissions of CF 4 ...............................................................................................6.12 Equation 6.9 By-product emissions of C 2 F 6 .............................................................................................6.12 Equation 6.10 By-product emissions of CHF 3 ............................................................................................6.12 Equation 6.11 By-product emissions of C 3 F 8 .............................................................................................6.12 Equation 6.12 Tier 1 method for estimation of total FC emissions from heat transfer fluids.....................6.14 Equation 6.13 Tier 2 method for estimation of FC emissions from heat transfer fluids.............................6.14Volume 3: Industrial Processes and Product Use

6.4 2006 IPCC Guidelines for National Greenhouse Gas Inventories 

# Figures

Figure 6.1 Decision tree for estimation of FC emissi ons from electronics manufacturing.....................6.8 Figure 6.2 Decision tree for estimation of FC emissi ons from HT fluid loss from electronics manufacturing.................................................................................................................. ....6.15



# Tables

Table 6.1 Information sources necessary for completing the tiered emission estimating methods for electronics ma nufactur ing...................................................................................................... 6.7 Table 6.2 Tier 1 Gas-specific emission factors for FC emissions from electroni cs manufacturing ....6.16

Table 6.3 Tier 2 Default emission factors for FC emissions from semiconductor manufacturing ......6.17

Table 6.4 Tier 2 Default emission factors fo r FC emissions from LCD manufacturing......................6.18

Table 6.5 Tier 2 Default emission factors for FC emissions from PV manufacturing ........................6.19

Table 6.6 Tier 2 a & 2 b Default efficiency parameters for elect ronics industry FC emission reduction technolo gies................................................................................................................... ......6.20 Table 6.7 Country total silicon (Si) and glass design capacities (Mm 2 ) for 2003, 2004 and 2005......6.23 Table 6.8 Country total PV production capacity a for 2003, Mm 2 ........................................................6.24

Table 6.9 Tier 2 default estimates of relative erro rs (%) for emission factor for FC emissions from semiconductor manufacturing, 95 pe rcent confidence intervals..........................................6.27 Table 6.10 Tier 2 default estimates of relative errors (%) for emission factor for FC emissions from LCD manufacturing, 95 percent confidence intervals ..................................................................6.28 Table 6.11 Information necessary for full transpar ency of estimates of emissions from electronics manufacturing.................................................................................................................. ....6.30



# Box

Box 6.1 Example for semic onductor manufacture............................................................................6.13Chapter 6: Electronics Industry Emissions

2006 IPCC Guidelines for National Greenhouse Gas Inventories 6.5 

# 6 ELECTRONICS INDUSTRY EMISSIONS

6.1 INTRODUCTION

Several advanced electronics manufacturing processes u tilise fluorinated compounds (FCs) for plasma etching intricate patterns, cleaning reactor chambers, and temper ature control. The specific electronic industry sectors discussed in this chapter include semiconductor, thin -film-transistor flat panel display (TFT-FPD), and photovoltaic (PV) manufacturing (collec tively termed ‘electronics industry’). 1
The electronics industry curr ently emits both FCs that are gases at room temperature and FCs that are liquids at room temperature. The gases include CF 4 , C 2 F 6 , C 3 F 8 , c-C 4 F 8 , c-C 4 F 8 O, C 4 F 6 , C 5 F 8 , CHF 3 , CH 2 F 2 , nitrogen trifluoride (NF 3 ), and sulfur hexafluoride (SF 6 ), and are used in two important steps of electronics manufacturing: (i) plasma etching silicon containing materials and (ii) cleaning chemical vapour deposition (CVD) tool chamber-walls where silicon has deposited. 2 The majority of FC emissions results from limited utilisation efficiency (i.e., consumption) of th e FC precursors during the etching or the cleaning process. In addition, a fraction of the fluorinated compounds used in the production process can be converted into by-product CF 4 and in some instances into C 2 F 6 , CHF 3 and C 3 F 8 . 3 Also, formation of CF 4 as a by-product of etching or cleaning carbon-containing low dielectric constant (low k) materials (or carbide) must be taken into account. 4 In addition, F 2 , COF 2 , and ClF 3 use may increase. These gases, although not in themselves contributors to global warming may lead to CF 4 formation under some conditions.

Electronics manufacturers use FCs for te mperature control during certain processes. Also known as heat transfer fluids, these FCs are liquids at room temperature and have appreciable vapour pressures. Evaporative losses contribute to the total FC emissions. These evaporative lo sses occur during cooling of certain process equipment, during testing of packaged semiconductor devices and during vapour phase reflow soldering of electronic components to circuit boards. Evaporative losses do not appear to occur when liquid FCs are used to cool electronic components or systems during operation. In th is application, the liquid FC s are contained in closed systems throughout the life of the product or system. More than 20 different liquid FCs are marketed, often as mixtures of fully fluorinated compounds, to the electronic sector. 5 Because the CO 2 equivalents of each liquid differ, each should be tracked and reported separate ly. The precise value of this conversion will be determined by the specific applicable reporting requirements. 6 , 7 In addition, liquid FCs are occasionally used to clean TFTFPD panels during manufacture.

1 Recent comprehensive surveys of European and US PV manufacturers indicate that 40 to 50 percent of PV-manufacturers

use relatively small quantities of FCs (predominantly CF 4 during etching of crystalline silicon wafers and C 2 F 6 during chamber cleaning after deposition of SiNx films). Global usage, according to these surveys for 2004, was approximately 30 Mtonnes CF 4 . While global FC use appears low in 2004, credible gr owth-forecasts of the PV industry are approximately 30 percent per year (and higher) for the foreseeable future. Morevoer, several reports extol the virt ues of FC use as a means to increase manufacturing productivity and lower costs for silicon-based technologies (Shah et al ., 2004; Maycock, 2005; Agostinelli et al ., 2004 and Rentsch et al ., 2005), Such expected growth rates and prospects for increase FC use motivate inclusion of FC emissions from PV manufacture in this chapter.

2 Although C 5 F 8 does not currently have a global warming potential (GWP) recognized by the IPCC, C 5 F 8 emissions are

discussed in this chapter. C 5 F 8 is a direct greenhouse gas and emissions can be estimated using met hods and data described in this chapter. C 5 F 8 ’s atmospheric lifetime is approximately 1 year, resulting in a relatively low GWP (Sekiya, 2003).

3 Emissions of C 2 F 6 by-products have been observed from the decomposition of C 4 F 6 molecules and may occur for other FC

molecules with greater than two carbon atoms. Note that for most FC precursors, C 2 F 6 formation as a by-product has not been observed. CHF 3 formation has been reported when c-C 4 F 8 is used as an etchant in TFT-FPD manufacture and C 3 F 8 by-product emissions have been reported when C 4 F 8 O is used in chamber cleaning.

4 Low dielectric constant (low k) material s were first used as insulators for the interconnect structure of semiconductor chips

at the 0.25 μ m node and below. Many lo w k materials contain carbon that may be removed as CF 4 during etching of thin films or the cleaning of the CVD re actors used for low k deposition. CF 4 may also be formed during cleaning of CVD reactors used for carbide deposition.

5 A relatively recent review summarises the uses of liquid FC s (heat transfer fluids), their chemical composition, GWPs,

among other things. See Burton (2004a).

6 These materials are marketed under the trade names Fluorinert TM and Galden ® . The Fluorinert TM materials are selected from

fully fluorinated alkanes, ethers , tertiary amines and aminoethers and mixtures thereof to obtain the desired properties. The Galden ® fluids span a range of fully fluorin ated polyethers, called perfluoropolyethe rs (PFPEs), also selected for the desired properties.Volume 3: Industrial Processes and Product Use

6.6 2006 IPCC Guidelines for National Greenhouse Gas Inventories 

# 6.2 METHODOLOGICAL ISSUES

6.2.1 Choice of method

6.2.1.1 E TCHING AND 

## CVD CLEANING FOR SEMICONDUCTORS 

## , LIQUID CRYSTAL DISPLAYS 

## , AND PHOTOVOLTAICS

Emissions vary according to the gases used in manufacturing different type s of electronic devices, the process used (or more roughly, process type (e.g., CVD or etch)), the brand of process tool used, and the implementation of emission reduction technology. The choice of methods will depend on data availability an d is outlined in the decision tree, see Figure 6.1, Decision Tree for Estimation of FC Emissions from Electronics Manufacturing. Emissions from liquid FCs are estimated using Tier 1, 2 and 3 approaches and are described separately in this section. 8
Continuous (in-situ) emissions monitoring is currently considered a technically and economically unviable means to estimate emissions from this industry. FC em issions are periodically m easured, however, during the development of new processes and tools, and after th e establishment of commercial-ready process conditions (also known as centreline process conditions). 9 The industry seeks, prior to the introduction of high-volume manufacturing, centreline process designs that minimize FC emissions. However, it must be noted that FC emissions can be affected by change s in process variables (e.g., pressure, temperature, plasma power, FC gas flow, processing time). Thus, the accuracy of the methods used for estimating emissions will be affected by eventual differences between the process used in production and the refe rence centreline proces s. In addition, the efficacy of FC emission control equi pment depends on operating and mainta ining the equipmen t according to the manufacturer’s specifications: Increased gas flows, im proper temperature settings, and failure to perform required maintenance will individually and co llectively negatively impact performance. The accuracy of estimated emissions depends on the method used. The Tier 1 method uses default values for all parameters and does not account for th e use of emission control technology. The Tier 2a method uses companyspecific data on the proportion of gas used in processes with and without emission control technology, but does not distinguish between etching and cleaning, and uses default values for the other parameters. The Tier 2b method uses company-specific data on the proportion of gas used in etching versus cleaning and the proportion of gas used in processes with emission control technology, but relies on default values for some or all of the other parameters. The most rigorous method, Tier 3 method, requires a complete set of process-specific values rather than defaults. Table 6.1 summarises the data requirements for the tiered emissions estimating methods for electronics manufacturing.

7 Where a commercial mixture is used inve ntory compilers will need to ensure that the conversion of the mass of the mixture to CO 2 equivalents uses the appr opriate conversion factors.

8 The logic depicted in Figure 6.1 does not show the possibility of combining tier s to improve estimates of emissions. For example, improved estimates of emissions might be achieved by using Tier 3 fo r a specific gas and process and Tier 2b for other gases and processes instead of us ing only the Tier 2b method. Similarly, the Tier 2a and 2b methods might be combined to produce an improved estimate compared to using only Tier 2a. However, the Tier 1 method should not be combined with any other method.

9 Centreline conditions refer to the c onditions under which equipment manufacturer s standardise their equipment for sale.

These are nominal specifications for gas flows, chamber pre ssure, processing time, plasma power, etc. It is common for semiconductor manufacturers to modify these co nditions to optimise fo r particular needs.Chapter 6: Electronics Industry Emissions

2006 IPCC Guidelines for National Greenhouse Gas Inventories 6.7 T ABLE 6.1 I NFORMATION SOURCES NECESSARY FOR COMPLETING TH E TIERED EMISSION ESTIMATING METHODS FOR
ELECTRONICS MANUFACTURING

Data Tier 1 Tier 2a Tier 2b Tier 3

FC i,p = kg of gas i fed into specific process
p or small set of common process tools (e.g., silicon nitride etch). M

FC i,p = kg of gas i fed into broad process category (e.g., etching or CVD chamber cleaning). M M(etch) & M(CVD)Process Gas EnteringTool

h = Fraction of gas remaining in shipping container after use (heel). D D M

U i,p = Use rate (fraction destroyed or transformed) for each gas i and process p

. D D(etch) & D(CVD) a MProcess GasReactions andDestruction inTool B CF4,i,p , B C2F6,i,p , B CHF3,i,p and B C3F8,i,p = Emission factor for by-product emissions of CF 4 , C 2 F 6 , CHF 3 and C 3 F 8 respectively for gas i for each process. D D(etch) & D(CVD) a M

a i,p = Fraction of gas i volume fed into processes with certified FC emission control technologies. M M M

d i,p = Fraction of gas i destroyed by the emission control technology. D D a MDownstream FC EmissionControl

d CF4,p , d C2F6,p , d CHF3,p and d C3F8,p = Fraction of CF 4 , C 2 F 6 , CHF 3 and C 3 F 8 by-products respectively destroyed by the emission control technology. b M

C d

= Annual manufacturing design capacity in surface area of substrate processed (e.g., silicon, glass). MAnnualProductionCapacity

C u = Fraction of annual capacity utilisation D/M
M = measure or acquire these values. D = Use default factors from guidance.

a When available and supportable, M values may be substituted fo r D values for Tier 2a and 2b. See conditions in Table 6.6.

b There are no default values for Tier 2a and Tier 2b because the effect of by-products has been incorporated into the D-values for

d i,p for gas i

.Volume 3: Industrial Processes and Product Use

6.8 2006 IPCC Guidelines for National Greenhouse Gas Inventories Figure 6.1 Decision tree for estimation of FC emissions from electronics manufacturing

Start

Are FC activity data available

from electronics

companies?

No

Is Electronics Industry a key category 1 and is this subcategory sinificant? Estimate emissions using the Tier 2b method.

Box 3: Tier 2b

Estimate emissions

using the Tier 1 method.

Box 1: Tier 1 Yes

Note: 1. See Volume 1 Chapter 4, Methodological Choice and Identification of Key Categories (noting Section 4.1.2 on limited resource s), for discussion of key categories and use of decision trees. Collect activity and emissions data from electronics companies.

Are national data available on annual electronics production

capacities by substrate area (e.g., silicon or glass)? Yes

No Yes Do reporting companies track FC gas usage by process type (i.e., CVD clean and etch)? Do companies that report use process-specific emission factors?

Develop or obtain

data on annual production capacity by substrate area for each sector. Estimate emissions using the Tier 2a method. Estimate emissions

using the Tier 3 method.

Box 2: Tier 2a Box 4: Tier 3 Yes

No

Yes

No No



### TIER 1 METHOD – DEFAULT

The Tier 1 method is the least accura te estimation method and should be used only in cases where companyspecific data are not available. The Tier 1 method, unlike the Tier 2 or 3 methods, is designed to give an aggregated estimate of FC emissions although its methodology appears to produce gas-specific emissions. Estimates are made simultaneously for all gases as listed in Table 6.2 and can only be used if reported as a complete set. The calculation of emissions relies on a fixed set of gene ric emissions factors. The members of the set differ depending on the sector (or class) of electronic products being manufactur ed (semiconductors, TFT-FPDs or PVcells). Each member of a set, which is a gas-specific em ission factor, expresses an average emissions per unit of substrate area (e.g., silicon, TFT-FPD panel or PV- cell) consumed during manufacture. For any class of electronic products, the factors (members of the set) are multiplied by the annual capacity utilisation (C u , a fraction) and the annual manufacturing design capacity (C d , in units of giga square meters (Gm 2 )) of substrate processes. The product (C u • C d ) is an estimate of the quantity of substrate consumed during electronics manufacture. The result is a set of annual emissions expre ssed in kg of the gases that comprise the set for each class of electronic products. Because the use of FCs varies widely during PV manufacture, a third factor toChapter 6: Electronics Industry Emissions

2006 IPCC Guidelines for National Greenhouse Gas Inventories 6.9 account for the proportion of PV manufact ure that employs FC is needed to estimate FC emissions from the PV cells manufacturing. The Tier 1 formula is shown in Equation 6.1.

E QUATION 6.1 T IER 1 METHOD FOR ESTIMATION OF THE SET OF FC EMISSIONS



## { } ( ) 

## [ ] { } ( ) n i C C C EF FC PV d u i i , , 1 1

K = − + • • • • = n n δ δ

Where: { FC i } n = emissions of FC gas i , mass of gas i Note: { } n denotes the set for each class of products (semiconductors, TFT- FPD or PV-cells) and n denotes the number of gases in cluded in each set (six for se miconductors, three for TFT-FPD manufacture and two for PV-cells. See Table 6.2.). The estimates are only valid if made and reported for all members of the set using this Tier 1 methodology.

EF i = FC emission factor for gas i expressed as annual mass of emissions per square meters of substrate surface area for the product class, (mass of gas i)/m 2

C u = fraction of annual plant production capacity utilisation, fraction

C d

= annual manufacturing design capacity, Gm 2 of substrate processed, except for PV manufacturing

which is Mm 2

C PV = fraction of PV manufacture that uses FCs, fraction

δ = 1 when Equation 6.1 is applied to PV industry and zero when Equation 6.1 is applied to either semiconductor or TFT-FPD industries, dimensionless This method does not account for differences among pr ocess types (etching vers us cleaning), individual processes, or tools. It also does not account for the possible use of atmospheric emission-control devices. In using Tier 1, inventory compilers should not modify, in any way, the set of the FCs assumed in Table 6.2. Inventory compilers should not combine emissions estimated using Tier 1 method with emissions estimated using the Tier 2 or 3 methods. Neither may inventory compilers use, for example, the Tier 1 factor for CF 4 to estimate the emissions of CF 4 from semiconductors and combine it with the results of other FC gases from a Tier 2 or Tier 3 method. (See also Section 6.2.2.1.)



### TIER 2a METHOD – PROCESS GAS-SPECIFIC PARAMETERS This method calculates emissions for each FC used on the basis of company-specific data on gas consumption and on emission control technologies. It uses industry -wide default values for th e ‘heel’ or fraction of the purchased gas remaining in the shipping container after use (h), the fraction of the gas ‘used’ (destroyed or transformed) in the semiconductor or TFT-FPD manufacturing process, and the fraction of the gas converted into CF 4 or C 2 F 6 during the process. To use the Tier 2a method inventory compilers must have direct communication with industry (e.g., annual emissions reporting) to gather data and ensure that emission control technologies are installed and in use. Total emissions are equal to the sum of emissions from the gas FC i used in the production process plus the emissions of by-product CF 4 , C 2 F 6 , CHF 3 and C 3 F 8 resulting from use of the gas FC i. , as shown in Equations 6.2, 6.3, 6.4, 6.5 and 6.6. Unlike the Tier 3 and 2b methods that are explained later in this section, the Tier 2a method does not distinguish between processes or process types (etching versus cleaning), individual processes or tools. The default emission factors represent weighted averages (based on expert judgments of weights), formed separately for each gas, over all etch and CVD processes. As discussed below in the section on emission factors, the Tier 2a method uses the emission factor for the process type (CVD or etch) in which the individual FC is most frequently used in the particular electronics sector. This method reflects a current trend where individual FCs tend to be used predominantly in particular process types (CVD or etch) throughout each i ndustry. However, in countries with companies or plants that depart significantly from the industry-wide pattern of usage (e .g., by using a gas primarily in etch while others primarily use it in CVD), inventory compilers should evaluate the potential to introduce error by using the Tier 2a method rather than the Tier 2b method.Volume 3: Industrial Processes and Product Use

6.10 2006 IPCC Guidelines for National Greenhouse Gas Inventories E QUATION 6.2 T IER 2a METHOD FOR ESTIMATION OF FC EMISSIONS 

## ( ) ( ) ( ) i i i i i d a U FC h E •

− •

− • •

− = 1 1 1

Where:

E i = emissions of gas i , kg

FC i = consumption of gas i, (e.g., CF 4 , C 2 F 6 , C 3 F 8 , c-C 4 F 8 , c-C 4 F 8 O, C 4 F 6 , C 5 F 8 , CHF 3 , CH 2 F 2 , NF 3 , SF 6 ), kg h = fraction of gas remaining in shipping container (heel) after use, fraction

U i = use rate of gas i (fraction destroyed or transformed in process), fraction

a i = fraction of gas i volume used in processes with emission control technologies (company- or plantspecific), fraction

d i = fraction of gas i destroyed by the emission control technology, fraction

E QUATION 6.3 B Y

- PRODUCT EMISSIONS OF CF 4 

## ( ) ( ) 4
, 4
, 4 1 1 CF i i i CF i CF d a FC B h BPE •

− • • •

− =

Where:

BPE CF4,i = by-product emissions of CF 4 from the gas i used, kg

B CF4,i = emission factor, kg CF 4 created/kg gas i used

d CF4 = fraction of CF 4 by-product destroyed by the emission control technology, fraction

E QUATION 6.4 B Y

- PRODUCT EMISSIONS OF C 2 F 6 

## ( ) ( ) 6 2
, 6 2
, 6 2 1 1 F C i i i F C i F C d a FC B h BPE •

− • • •

− =

Where:

BPE C2F6,i = by-product emissions of C 2 F 6 from the gas i used, kg

B C2F6,i = emission factor, kg C 2 F 6 created/kg gas i used

d C2F6 = fraction of C 2 F 6 by-product destroyed by the emission control technology, fraction

E QUATION 6.5 B Y

- PRODUCT EMISSIONS OF CHF 3 

## ( ) ( ) 3
, 3
, 3 1 1 CHF i i i CHF i CHF d a FC B h BPE •

− • • •

− =

Where:

BPE CHF3,i = by-product emissions of CHF 3 from the gas i used, kg

B CHF3,i = emission factor, kg CHF 3 created/kg gas i used

d CHF3 = fraction of CHF 3 by-product destroyed by the emission control technology, fraction

E QUATION 6.6 B Y

- PRODUCT EMISSIONS OF C 3 F 8 

## ( ) ( ) 8 3
, 8 3
, 8 3 1 1 F C i i i F C i F C d a FC B h BPE •

− • • •

− =

Where:Chapter 6: Electronics Industry Emissions

2006 IPCC Guidelines for National Greenhouse Gas Inventories 6.11 BPE C3F8,i = by-product emissions of C 3 F 8 from the gas i used, kg

B C3F8,i = emission factor, kg C 3 F 8 created/kg gas i used

d C3F8 = fraction of C 3 F 8 by-product destroyed by the emission control technology, fraction After estimating the emission of gas i (E i ) and the CF 4 , C 2 F 6 , CHF 3 and C 3 F 8 by-product emissions for each gas (BPE CF4,i , BPE C2F6,i , BPE CHF3,i and BPE C3F8,i ), inventory compilers or compan ies should sum these emissions across all gases to estimat e the total aggregate FC emissions.



### TIER 2b METHOD – PROCES S TYPE-SPECIFIC PARAMETERS The Tier 2b method requires data on the aggregate quan tities of each gas fed into a ll etching processes and all cleaning processes (FC i,p ). Thus, it distinguishes only between broad process types (etching vs. CVD chamber cleaning), but it does not dis tinguish among the many possible individua l processes or small sets of processes. Industry-wide default values can be used for any or all of the following:

• the fraction of the gas remain ing in the shipping container after use termed the ‘heel’ (h);

• the fraction of the gas ‘used’ (destroyed or transformed) per process type (U i,p );

• the emission factor for CF 4 by-product emissions in the process type (B CF4,i,p );

• the emission factor for C 2 F 6 by-product emissions in the process type (B C2F6,i,p );

• the emission factor for CHF 3 by-product emissions in the process type (B CHF3,i,p) ); and

• the emission factor for C 3 F 8 by-product emissions in the process type (B C3F8,i,p ). Defaults are also presented (see Table 6.6) for the fr action of the gas destroyed by the emissions control technology by process type (d i,p , d CF4,p , d C2F6,p , d CHF3,p and d C3F8,p ). Unless emission control technologies are installed, the default value for a i , p , the fraction of gas volume fed into processes with emission control technologies, is zero. Th e default values for U i,p , B CF4,i,p , B C2F6,i,p , B CHF3,i,p and B C3F8,i,p represent simple unweighted averages , formed separately for each gas, over all etch processes and over all CVD processes. Company or plant-specific emission fact ors may be substituted for default valu es when available. The equations account for the plant-specific use of emission-contr ol devices, but do not account for differences among individual processes or tools or among manufacturing plants in their mix of processes and tools. Thus, Tier 2b estimates will be less accurate than Tier 3 estimates. Al so, note that the Tier 2b method is applicable to semiconductor and TFT-FPD manufacture. Emissions resulting from the use of a specific FC (FC i ) consist of emissions of FC i itself plus emissions of CF 4 , C 2 F 6 , CHF 3 and C 3 F 8 created as by-products during use of FC i . The following calculation should be repeated for each gas for each process type:

E QUATION 6.7 T IER 2b METHOD FOR ESTIMATION OF FC EMISSIONS 

## ( ) 

# ( )( ) 

# [ ] ∑ •

− •

− • •

− =
p p i p i p i p i i 

### d a U FC h E

, , , , 

### 1 1 1

Where:

E i = emissions of gas i , kg p = process type (etching vs. CVD chamber cleaning)

FC i,p = mass of gas i fed into process type p (e.g., CF 4 , C 2 F 6 , C 3 F 8 , c-C 4 F 8 , c-C 4 F 8 O, C 4 F 6 , C 5 F 8 , CHF 3 , CH 2 F 2 , NF 3 , SF 6 ), kg h = fraction of gas remaining in shipping container (heel) after use, fraction

U i,p = use rate for each gas i and process type p (fraction destroyed or transformed), fraction

a i,p = fraction of gas i volume fed into process type p with emission control technologies (company-or plant-specific), fraction

d i,p = fraction of gas i destroyed by the emission control technology used in process type p (If more than one emission control technology is used in process type p , this is the average of the fraction destroyed by those emission control technologies, where each fraction is weighted by the quantity of gas fed into tools using th at technology), fractionVolume 3: Industrial Processes and Product Use

6.12 2006 IPCC Guidelines for National Greenhouse Gas Inventories E QUATION 6.8 B Y

- PRODUCT EMISSIONS OF CF 4 

## ( ) 

# ( ) 

# [ ] ∑ •

− • • •

− =
p p CF p i p i p i CF i CF d a FC B h BPE

, 4
, , , , 4
, 4 1 1

Where:

BPE CF4,i = by-product emissions of CF 4 converted from the gas i used, kg

B CF4,i,p = emission factor for by-product emissions of CF 4 converted from gas i in process type p , kg CF 4 created/kg gas i used

d CF4,p = fraction of CF 4 by-product destroyed by the emission control technology used in process type p (e.g., control technology type listed in Table 6.6), fraction

E QUATION 6.9 B Y

- PRODUCT EMISSIONS OF C 2 F 6 

## ( ) 

# ( ) 

# [ ] ∑ •

− • • •

− =
p p F C p i p i p i F C i F C d a FC B h BPE

, 6 2
, , , , 6 2
, 6 2 1 1

Where:

BPE C2F6,i = by-product emissions of C 2 F 6 converted from the gas i used, kg

B C2F6,i,p = emission factor for by-product emissions of C 2 F 6 converted from gas i in process type p , kg C 2 F 6 created/kg gas i used

d C2F6,p = fraction of C 2 F 6 by-product destroyed by the emission control technology used in process type p (e.g., control technology type listed in Table 6.6), fraction

E QUATION 6.10 B Y

- PRODUCT EMISSIONS OF CHF 3 

## ( ) 

# ( ) 

# [ ] ∑ •

− • • •

− =
p p CHF p i p i p i CHF i CHF d a FC B h BPE

, 3
, , , , 3
, 3 1 1

Where:

BPE CHF3,i = by-product emissions of CHF 3 converted from the gas i used, kg

B CHF3,i,p = emission factor for by-product emissions of CHF 3 converted from gas i in process type p , kg CHF 3 created/kg gas i used

d CHF3,p = fraction of CHF 3 by-product destroyed by the emission control technology used in process type p (e.g., control technology type listed in Table 6.6), fraction

E QUATION 6.11 B Y

- PRODUCT EMISSIONS OF C 3 F 8 

## ( ) 

# ( ) 

# [ ] ∑ •

− • • •

− =
p p F C p i p i p i F C i F C d a FC B h BPE

, 8 3
, , , , 8 3
, 8 3 1 1

Where:

BPE C3F8,i = by-product emissions of C 3 F 8 from the gas i used, kg

B C3F8,i,p = emission factor for by-product emissions of C 3 F 8 converted from gas i in process type p , kg C 3 F 8 created/kg gas i used

d C3F8,p = fraction of C 3 F 8 by-product destroyed by the emission control technology used in process type p (e.g., control technology type listed in Table 6.6), fractionChapter 6: Electronics Industry Emissions

2006 IPCC Guidelines for National Greenhouse Gas Inventories 6.13 Note that in certain etching or cleaning recipes, multip le FC precursors can be used concurrently and emissions of CF 4 , C 2 F 6 , CHF 3 or C 3 F 8 as by-products may originate from each of the individual FC precursor decomposition. In such cases, emissions of CF 4 , C 2 F 6 , CHF 3 or C 3 F 8 by-products should be reported as originating from the FC gas with the largest mass flow.



### TIER 3 METHOD – PROCESS-SPECIFIC PARAMETERS The Tier 3 method also uses Equations 6.7, 6.8, 6.9, 6.10 and 6.11. However, this method requires companyspecific or plant-specific values for all the parameters us ed in these equations for each individual process or for each of small sets of processes (e.g ., silicon nitride etching or plasma enhanced chemical vapour deposition (PECVD) tool chamber cleaning). Therefore, when using Equations 6.7, 6.8, 6.9, 6.10 and 6.11, inventory compilers need to interpret ‘p’ in these equations as a sp ecific ‘Process’ (e.g., silicon nitride etching or plasma enhanced chemical vapour deposition (PECVD) tool chamber cleaning), not as ‘Process type’. For purposes of transparency and comparability, the valu es used for these emission parameters should be well documented (see Section 6.2.2).



### CF 4 

### formation from C-containing films during semiconductor manufacturing The Tier 2a, Tier 2b and Tier 3 methods account for CF 4 emissions formed during removal via etching of carbon-containing low dielectric constant (k) materials or cleaning CVD r eactors containing low k or carbide films during semiconductor manufacture. CF 4 may be formed even if the FC precursor does not contain carbon or if the FC precursor is not a greenhouse gas. For example, cleaning low k CVD reactors with NF 3 will produce CF 4 as a by-product. In these cases, Equation 6.7 should be used to report NF 3 emissions and the result of Equation 6.8 should be used to reflect emissions of CF 4 from the process. In those situations where F 2 , COF 2 , or ClF 3 is used in chamber cleaning, CF 4 may also be formed. In this case, CF 4 emissions are estimated using Equation 6.8 and the results added to the total CF 4 emissions obtained from Equation 6.7. In both cases, B CF4,i,p should be measured as the fraction of the mass of CF 4 produced over the mass of clean or etch gas introduced in the reactor. After estimating emissions of each FC gas and emissions of CF 4 , C 2 F 6 , CHF 3 and C 3 F 8 as by-products, inventory compilers or companies should sum these emissions across all gases to arrive at an estimate of aggregate FC emissions from a particular process.

B OX 6.1 E XAMPLE FOR SEMICONDUCTOR MANUFACTURE For example, if a source used NF 3 (for chamber cleaning and etch), CHF 3 (etch) and CF 4 (etch), the total emissions, if low k films were used, are estimated using Equation 6.7 for NF 3 , CHF 3 and CF 4 and Equation 6.8 for the formation of CF 4 formed when removing low k films with NF 3 . In equation form, the total is:

Total FC emissions = E NF3 + E CHF3 + E CF4 + BPE CF4,NF3



## 6.2.1.2 H EAT TRANSFER FLUIDS

There are two methods for estimating emissions from the us e of heat transfer fluids. The choice of methods will depend on the availability of activity data on the use of he at transfer fluids, and is outlined in the decision tree (see Figure 6.2, Decision Tree for Estimation of FC Emissions from Heat Transfer Fluids, and see Section 1.5 of Chapter 1, Choosing between the Mass-Ba lance and Emission-Factor Approach).


### TIER 1 – HEAT TRANSFER FLUIDS Tier 1 is appropriate when company-specific data are not av ailable on heat transfer fluids. It is the less accurate of the two methods for estimating emissions from losses of heat transfer fluids. The method, unlike the Tier 2 method, gives an estimate of aggregate emissions - a weighted average emission across all liquid FCs that is expressed as the mass of C 6 F 14 10 . The calculation relies on a generic emissi on factor that expresses the average

10 In the absence of GWP estimates, the appropriate GWP for C 6 F 14 has been used as a proxy (to derive the default emission

factor). (See the Inventory of U.S. Greenhouse Gas and Sinks: 1990-2003, the footnot e to Table 4-58, page 166. (U.S. EPA, 2005))Volume 3: Industrial Processes and Product Use

6.14 2006 IPCC Guidelines for National Greenhouse Gas Inventories aggregate emissions per unit of silicon consumed during semiconductor manufacturing. The formula is shown in Equation 6.12.

E QUATION 6.12 T IER 1 METHOD FOR ESTIMATION OF TOTAL FC EMISSIONS FROM HE AT TRANSFER FLUIDS

d u l total liquid C C EF FC • • =

,
Where:

FC liquid, total = total FC emissions as expressed as the mass of C 6 F 14 , Mt C 6 F 14
EF l = emission factor (aggregate FC emissions per Gm 2 of silicon consumed during the period expressed as the mass of C 6 F 14 (See Table 6.2.)), Mt C 6 F 14 /Gm 2

C u = average capacity utilisation for all semiconductor manufacturing facilities in the country during the period, fraction

C d

= design capacity of semiconductor manufacturing facilities in the country, Gm 2



### TIER 2 METHOD – HEAT TRANSFER FLUIDS

There is one Tier 2 method for estimat ing actual emissions from the use of each FC fluid. This method is a massbalance approach that accounts for liquid FC usage overan annual period. It is appropriate when companyspecific data are available. Over the course of a year, liquid FCs are used to fill newly purchased equipment and to replace FC fluid loss from equipment operation through evaporation. The Tier 2 method neglects fluid losses during filling new or existing equipment or when decommissioning old equipment (which is reasonable for these costly fluids). 11 Inventory compilers should obtain from companies the chemical composition of the fluid(s) for which emissions are estimated. The method is expressed in Equation 6.13.

E QUATION 6.13 T IER 2 METHOD FOR ESTIMATION OF FC EMISSIONS FROM HEAT TRANSFER FLUIDS 

## ( ) ( ) ( ) ( ) ( ) ( ) 

# [ ] l D l I l R l N l P l I FC t i t i t i t i t i t i i i
, , , , , 1
, − − +

− + • =

−

ρ

Where:

FC i = emissions of FC i , kg

i ρ = density of liquid FC i , kg/litre

I i,t-1 (l) = the inventory of liquid FC i at the end of the previous period, litres

P i,t (l) = net purchases of liquid FC i during the period (net of purchases and any returns), litres

N i,t (l) = total charge (or nameplate capacity) of new installed, litres

R i,t (l) = total charge (or nameplate capacity) of retired or sold equipment, litres

I i,t (l) = inventory of liquid FC i at end of the period, litres

D i,t (l) = amount of FC i recovered and sent offsite from retir ed equipment during the period, litres

11 Prices for heat transfer fluids vary from $55 – 130/litre. 3M, a manufacturer of a popular heat transfer fluid estimates that a

vintage 2 000 manufacturing plant may loos e 1 900 litres/year via evaporation. Manuf actures of testing equipment that use heat transfer fluids report loss rates of approximately 30 litres/year/system for ne wer designs that reduce evaporative losses and 50 litres/year/system for older designs.Chapter 6: Electronics Industry Emissions

2006 IPCC Guidelines for National Greenhouse Gas Inventories 6.15 Figure 6.2 Decision tree for estimation of FC emissions from HT fluid loss from electronics manufacturing

Are heat transfer fluid loss data available from electronics manufacturing companies? Start

Estimate emissions using the Tier 2 method.

Box 2: Tier 2 Yes

Is Electronics Industry a key category and is this subcategory

significant? 1 No

Collect liquid FC use data from companies. Yes

Estimate emissions using the Tier 1 method. No

Box 1: Tier 1

Note: 1. See Volume 1 Chapter 4, Methodologi cal Choice and Identification of Key Cate gories (noting Section 4.1.2 on limited resources), for discussion of key categories and use of decision trees



# 6.2.2 Choice of emission factors 12



## 6.2.2.1 E TCHING AND 

## CVD CLEANING FOR SEMICONDUCTORS 

## , LIQUID CRYSTAL DISPLAYS 

## , AND PHOTOVOLTAICS

TIER 1 The default emission factors for the Tier 1 method is presented in Table 6.2 below. In using Tier 1, it is not good practice to modify, in any way, the set of the FCs or the values of the emission factors assumed in Table 6.2. Inventory compilers should not combine emissions estimated using Tier 1 method with emissions estimated using the Tier 2 or 3 methods. For example, inventory compilers may not use the Tier 1 factor for CF 4 to estimate the emissions of CF 4 from semiconductors and combine it with the results of other FC gases from a Tier 2 or Tier 3 method. It should be also noted that the Tier 1 FC emission factors presented in Table 6.2 should not be used for any purpose other than estimating annual FC-aggregate emissions from semiconductor, TFT-FPD or PV manufacturing for compilation of the national greenhouse gas inventory.

12 Sources and methods for developing emissi ons factors, if not explicitly provided in Chapter 6, can be found in Burton

(2006).Volume 3: Industrial Processes and Product Use

6.16 2006 IPCC Guidelines for National Greenhouse Gas Inventories T ABLE 6.2 T IER 1 G AS

- SPECIFIC EMISSION FACTORS FOR FC EMISSIONS FROM ELECTRONICS MANUFACTURING
Emission Factor (EF) (Mass per Unit Area of Substrate Processed) Electronics Industry Sector CF 4 C 2 F 6 CHF 3 C 3 F 8 NF 3 SF 6 C 6 F 14 Semiconductors, kg/m 2 0.9 1. 0.04 0.05 0.04 0.2 NA
TFT-FPDs, g/m 2 0.5 NA NA NA 0.9 4. NA

PV-cells a , g/m 2 5 0.2 NA NA NA NA NA

Heat Transfer Fluids b , kg/m 2 NA NA NA NA NA NA 0.3

a EFs adapted from unpublished work of Fthena kis, Alsema and Agostinelli. (Fthenakis , 2005) Note that factor is applicable only to

silicon-specific technologies and is applied for abatement.

b EF assumes HTFs have the same GWP and C 6 F 14 represents a suitable proxy. The origin of this factor is described in Burton, 2004,

and is based in part on the work of Tuma and Tousignant (2001).



### TIER 2 As discussed above, emissions factors based on simple electronics production variables are not adequate to account for all of the factors that influence emissions. Data for each of the following parameters are necessary to prepare a reliable estimate:

• The gases used;

• The process type (CVD or etch) used;

• The brand of process tool used;

• Emission reduction technology. Default values have been developed for the parameters used in Tier 2a and 2b methods (See Figure 6.1) on the basis of direct measurements, literature, and expert j udgement (see Tables 6.3, 6.4, and 6.5 Tier 2 Default Emission Factors for FCs Emissions from Semiconductor 12 , TFT-FPD 13 , and PV 12 Manufacturing respectively). Given the difficulty in representing the diverse production conditions within the electronics industry, default emission parameters are inherently uncer tain. While accuracy can be improved w ith larger sets of measured data and where factors are applied to similar processes using si milar or identical chemical recipes, developing default factors necessarily involves some form of averaging across all of the data. Electronics industry specialists expect that rapid tech nical innovation by chemical and equipment suppliers and electronics manufacturers will result in major emission reductions in the future (i.e., 2006 onwards). As a result, emission factors for these categories should evolve to reflect these changes. The semiconductor and TFT-FPD industries have established mechanisms through the World Semiconductor Council and the World LCD Industry Cooperation Committee, respectively, to evaluate global emission factors. The PV industry may be considering establishing a mechanism for tracking its PFC emi ssions during PV manufacture. (Fthenakis, 2006) FC-use during PV manufacture may or may not increase. Existing evidence suggests that, should FC-use in this industry grow, efforts will be made to control their emissions (Agostinelli et al ., 2004; Rentsch et al ., 2005). Inventory compilers may wish to periodically consult with the industry to better understand global and national circumstances.

Tables 6.3 and 6.4 include two entries for NF 3 : Remote-NF 3 and NF 3 . The first refers to a cleaning method in which the film cleaning-agents formed from NF 3 (F-atoms) are produced in a plasma upstream (remote) from the chamber being cleaned. The last, denoted as simply NF 3 , refers to an in-situ NF 3 cleaning process that is analogous to the process fo r other cleaning gases like C 2 F 6 and C 3 F 8 . The default value for the fraction of gas remaining in the shipping container (heel) is 0.10.

13 The emissions factors (EFs) for TFT-FPD manufacturing are simple (unweighted) averages developed from gas- and

process-specific values published by Nishida et al . (2005).Chapter 6: Electronics Industry Emissions2006 IPCC Guidelines for National Greenhouse Gas Inventories6.17TABLE6.3TIER2DEFAULT EMISSION FACTORS FORFCEMISSIONS FROM SEMICONDUCTOR MANUFACTURINGGreenhouse Gases with TAR GWP Greenhouse Gaseswithout TAR GWPNon-GHGsProducing FCBy-products‡Process Gas(i)CF4C2F6CHF3CH2F2C3F8c-C4F8NF3RemoteNF3SF6C4F6C5F8C4F8O F2COF2Tier 2a1-Ui0.9 0.6 0.4 0.1 0.4 0.1 0.02 0.2 0.2 0.1 0.1 0.1 NA NABCF4NA 0.2 0.07 0.08 0.1 0.1 0.02†0.09 NA 0.3 0.1 0.1 0.02†0.02†BC2F6NA NA NA NA NA 0.1 NA NA NA 0.2 0.04 NA NA NABC3F8NA NA NA NA NA NA NA NA NA NA NA 0.04 NA NATier 2bEtch 1-Ui0.7*0.4*0.4*0.06*NA 0.2*NA 0.2 0.2 0.1 0.2 NA NA NACVD 1-Ui0.9 0.6 NA NA 0.4 0.1 0.02 0.2 NA NA 0.1 0.1 NA NAEtch BCF4NA 0.4*0.07*0.08*NA 0.2 NA NA NA 0.3*0.2 NA NA NAEtch BC2F6NA NA NA NA NA 0.2 NA NA NA 0.2*0.2 NA NA NACVD BCF4NA 0.1 NA NA 0.1 0.1 0.02†0.1†NA NA 0.1 0.1 0.02†0.02†CVD BC2F6NA NA NA NA NA NA NA NA NA NA NA NA NA NACVD BC3F8NA NA NA NA NA NA NA NA NA NA NA 0.04 NA NANotes: NA denotes not applicable based on currently available information‡The default emission factors for F2and COF2may be applied to cleaning low-k CVD reactors with ClF3.*Estimate includes multi-gas etch processes†Estimate reflects presence of low-k, carbide and multi-gas etch processes thatmay contain a C-containing FC additiveVolume 3: Industrial Processes and Product Use2006 IPCC Guidelines for National Greenhouse Gas Inventories6.18TABLE6.4TIER2DEFAULT EMISSION FACTORS FORFCEMISSIONS FROMLCDMANUFACTURINGGreenhouse Gases with TAR GWP Greenhouse Gaseswithout TAR GWPNon-GHGsProducing FCBy-productsProcess Gas(i)CF4C2F6CHF3CH2F2C3F8c-C4F8NF3RemoteNF3SF6C4F6C5F8C4F8O F2COF2Tier 2a1-Ui0.6 NA 0.2 NA NA 0.1 0.03 0.3 0.6 NA NA NA NA NABCF4NA NA 0.07 NA NA 0.009 NA NA NA NA NA NA NA NABCHF3NA NA NA NA NA 0.02 NA NA NA NA NA NA NA NABC2F6NA NA 0.05 NA NA NA NA NA NA NA NA NA NA NABC3F8NA NA NA NA NA NA NA NA NA NA NA NA NA NATier 2bEtch 1-Ui0.6 NA 0.2 NA NA 0.1 NA NA 0.3 NA NA NA NA NACVD 1-UiNA NA NA NA NA NA 0.03 0.3 0.9 NA NA NA NA NAEtch BCF4NA NA 0.07 NA NA 0.009 NA NA NA NA NA NA NA NAEtch BCHF3NA NA NA NA NA 0.02 NA NA NA NA NA NA NA NAEtch BC2F6NA NA 0.05 NA NA NA NA NA NA NA NA NA NA NACVD BCF4NA NA NA NA NA NA NA NA NA NA NA NA NA NACVD BC2F6NA NA NA NA NA NA NA NA NA NA NA NA NA NACVD BC3F8NA NA NA NA NA NA NA NA NA NA NA NA NA NANotes: NA denotes not applicable based on currently available informationChapter 6: Electronics Industry Emissions2006 IPCC Guidelines for National Greenhouse Gas Inventories6.19TABLE6.5TIER2DEFAULT EMISSION FACTORS FORFCEMISSIONS FROMPVMANUFACTURINGGreenhouse Gases with TAR GWP Greenhouse Gases withoutTAR GWPNon-GHGsProducing FCBy-productsProcessGas (i)CF4C2F6CHF3CH2F2C3F8c-C4F8NF3RemoteNF3SF6C4F6C5F8C4F8O F2COF2Tier 2a1-Ui0.7 0.6 0.4 NA 0.4 0.2NA 0.2 0.4 NA NA NA NA NABCF4NA 0.2 NA NA 0.2 0.1 NA 0.05 NA NA NA NA NA NABC2F6NA NA NA NA NA 0.1 NA NA NA NA NA NA NA NABC3F8NA NA NA NA NA NA NA NA NA NA NA NA NA NATier 2bEtch 1-Ui0.7 0.4 0.4 NA NA 0.2 NA NA 0.4 NA NA NA NA NACVD 1-UiNA 0.6 NA NA 0.1 0.1 NA 0.3 0.4 NA NA NA NA NAEtch BCF4NA 0.2 NA NA NA 0.1 NA NA NA NA NA NA NA NAEtch BC2F6NA NA NA NA NA 0.1 NA NA NA NA NA NA NA NACVD BCF4NA 0.2 NA NA 0.2 0.1 NA NA NA NA NA NA NA NACVD BC2F6NA NA NA NA NA NA NA NA NA NA NA NA NA NACVD BC3F8NA NA NA NA NA NA NA NA NA NA NA NA NA NANotes: NA denotes not applicable based on currently available informationVolume 3: Industrial Processes and Product Use

6.20 2006 IPCC Guidelines for National Greenhouse Gas Inventories T ABLE 6.6 T IER 2a & 2b D EFAULT EFFICIENCY PARAMETERS FOR ELECTRONICS INDUSTRY FC EMISSION REDUCTION
TECHNOLOGIES a,b,e

Emission Control Technology CF 4 C 2 F 6 CHF 3 C 3 F 8 c-C 4 F 8 NF 3 f SF 6
Destruction c 0.9 0.9 0.9 0.9 0.9 0.95 0.9
Capture/Recovery d 0.75 0.9 0.9 NT NT NT 0.9

a Values are simple (unweighted) averages of destruction efficiencies for all ab atement technologies. Emission factors do not apply to emission control technologi es which cannot abate CF 4 at destruction or re moval efficiency (DRE) ≥ 85 percent when CF 4 is present as an input gas or by-product and all other FC gases at DRE ≥ 90 percent. If manufacturers use an y other type of emission control technology, its destruction efficiency is 0 percent when using the Tier 2 methods.

b Tier 2 emission control technology factors ar e applicable only to electrically heated , fuelled-combustion, plasma, and catalyti c devices

that

• are specifically designed to abate FCs,

• are used within the manufacturer’s specified process window and in accordance with specifi ed maintenance schedules and

• have been measured and has been c onfirmed under actual process conditions, us ing a technically sound protocol, which accounts for known measurement errors including, for example, CF 4 by-product formation during C 2 F 6 as well as the effect of dilution, the use of oxygen or both in combustion abatement systems

c Average values for fuelled combustion, pl asma, and catalytic abatement technologies.

d Average values for cryogenic and membra ne capture and recovery technologies.

e Vendor data verified by semiconductor manuf acturers. Factors should only be used when an emission control technology is being utilised and maintained in accordance with abatement manufacturer specifications.

f Use of NF 3 in the etch process is typically small comp ared to CVD. The aggregate emissions of NF 3 from etch and CVD under Tier 2b will usually not be greater than estimates made with Tier 2a or Tier 1 methods. NT = not tested.



### Process tool emission factors The procedures for calculating process tool emission factors for Tier 2a and Tier 2b methods are identical. Process tool emission factors are defined as the amount of greenhouse gas emitted divided by the amount of greenhouse gas used in the process. The em ission factors correspond to the ‘(1 – U i )’ term in the Tier 2 formulas. For example, the emission factor of 0.9 for CF 4 (see Table 6.3 above, Tier 2a va lue) means that 90 percent of the CF 4 used in the process is emitted as CF 4 . By-product emission factors were also calculated. The major by-product emission of significance is CF 4 . While it is generally held that the only gases that emit significant amounts of CF 4 as a by-product are C 2 F 6 and C 3 F 8 , the data provided by tool manufacturers and chemical suppliers showed that CF 4 is also formed from mixtures of gases (e.g., that contain CHF 3 or CH 2 F 2 ) and c-C 4 F 8 . As a result of this discussion, CF 4 by-product emission factors were calculated for CHF 3 , CH 2 F 2 , C 2 F 6 , C 3 F 8 , c-C 4 F 8 and C 4 F 8 O. For example, a value of 0.1for C 3 F 8 (taken from Table 6.3 above, Tier 2a value) means that 10 percent of the C 3 F 8 used is converted into CF 4 . However, C 2 F 6 may also be emitted from the decomposition of molecules such as C 4 F 6 . As described previously, CF 4 may also be formed when etching or cleaning ch ambers where carbon-containing films are present. In order to calculate the Tier 2b pr ocess tool emission factors, data were collected from process equipment and gas manufacturers. The data were collected according to process type (either Chemical Vapour Deposition (CVD) or etch) and also by type of gas (e.g. C 2 F 6 , CF 4 ). The methods used to conduct the emissions testing were real time Quadrupole Mass Spectrometry (QMS) and Fourier Transform Infrared Spectroscopy (FTIR), the best known methods for measuring process tool emissions. Calibration standards (usually 1 percent mixtures with a balance of N 2 ) were used to quantify the results. The measurement protocol and quality control requirements that were followed are outlined in the ‘Guidelines for Enviro nmental Characterisation of Semiconductor Equipment.’ (Meyers et al ., 2001) 14 The emission factors for Tier 2b (see Tables 6.3 and 6.4 above) are the simple (unweighted) average of the data co llected for each gas for etch and CVD, rounded to one significant figure. 12, 16
In order to determine the Tier 2a process tool emission factors, knowledge of the amounts of gas used in typical semiconductor manufacturing processes is required. The Tier 2a emission factors were obtained using weights provided by industry experts for the proportion of each gas used in etching and cleaning processes. For example, the Tier 2b emission factors for C 2 F 6 (Table 6.3) are 0.5 (etch) and 0.6 (CVD). The distribution of C 2 F 6 usage between etching and CVD chamber cleaning processes during semiconductor manufacture is 20:80. Applying these weights to each of the emission factors gives 0.6 for the Tier 2a factor for C 2 F 6 to one significant figure.

14 These guidelines have also been adop ted by flat panel display manufacturers fo r measuring FC-emissions during flat panel

device manufacture.Chapter 6: Electronics Industry Emissions

2006 IPCC Guidelines for National Greenhouse Gas Inventories 6.21 The corresponding distribution of SF 6 usage in TFT-FPD manufacture is 50:50, which gives 0.6 for corresponding Tier 2a emi ssion factor (Table 6.4). 15
For Tier 3 emission factors, semiconductor manufacturers us e company or plant-specific values rather than using default values as listed in Table 6.1 above. In order to assure the quality of emission factors, emission testing should be conducted in accor dance with accredited methods. 16 If a third-party supplier conducts the emissions testing, the semiconductor manufacturer should make sure that the third-party supplier is capable of meeting all of the requirements outlined in Revision 3.0 of the E quipment Environmental Characterisation Guidelines (SIA, 2000). Semiconductor manufacturers who use emission factors provided by the process tool equipment supplier should make sure that the emission factors are applicable to their speci fic manufacturing process. Manufacturing methods with process parameters (e.g ., pressure, flow rate) that deviat e from centreline conditions may have different emission factors than those provided by the tool manufacturer. 

### Emission control technology factors for Tier 2 methods Emissions control technologies are developing at a rapid pace along with electronics manufacturing technology. Default control technology emission factors in Table 6.6 are based on tests of control devices that have been optimised for specific processes and tool s. Results are expected to vary acro ss tools and gas fl ow rates. Emission factors are not applicable to all tools or processes in semiconductor, liquid crystal display, or photovoltaic manufacturing facilities. The Tier 2 default destruction ef ficiency parameters presented in Table 6.6 are only applicable when the inventory compiler can demonstr ate through communication w ith facility managers and subsequent documentation that emissions control technol ogies are operated and main tained in accordance with manufacturer specifications. If companie s use any other type of abatement de vice, they should assume that its destruction efficiency is 0 percent under the Tier 2 a and b methods. Assumptions for the emissions control technology emission factors for the Tier 2 (a & b) methods include: (i) Specific emissions control technologies are not listed; emission factors for each chemical were established based on results achieved during testing of emissions control technologies in semiconductor manufacturing applications; (ii) Emission factors should only be used when abatement is applied to emissions that fall within the operating range specified by the abat ement manufacturer to meet or exce ed the factors listed in Table 6.6; (iii) Emission factors apply only to that portion of emissions that pass through a properly operating and maintained control device; emission factors should not be applied when control device is bypassed, not operating according to manufacturer specificatio ns, or not maintained in accordance with specifications. (iv) Emission factors do not apply to emission control tech nologies which cannot abate CF 4 at a destruction removal efficiency (DRE) ≥ 85 percent when CF 4 is present as an input gas or by-product and all other FC gases at DRE ≥ 90 percent. If manufacturers use any other type of emission control technology, its destruction efficiency is 0 percent when using the Tier 2 methods. The default Tier 2 emission control factors in Table 6.6, Default Efficiency Parameters for Electronics Industry FC Emission Reduction Technologies were calculated from data received from equipment suppliers, abatement technology suppliers and electronic device manufacturers. It should be noted that only data from abatement devices that were specifically designed to abate FCs we re used in the calculation. Data were received from combustion abatement devices (all of which used some ty pe of fuel), plasma abatement devices, electrically heated abatement devices, and catalytic abatement devices. The values presented in Table 6.6, Default Efficiency Parameters fo r Electronics Industry FC Emission Reduction Technologies, are the results of all of the data received for optimized tec hnologies and for each input gas, rounded down to the next 5 percent (e.g., an average of 98 percent would be rounded down to 0.95). The averages were rounded down to reflect that (i) emissions control devices vary in their efficacy depending upon what gas they are optimised to destro y, and (ii) the efficacy of emission control devices depends on the type of tool they are installed on (150, 200 or 300mm wafers) and the amount of FC gas flown through that particular tool, and total exhaust flow through the emissions control device. An emission control device that can destroy 99 percent of a FC when it is optimised to destroy that FC on a certain tool may destroy less than 95 percent of that FC when it is optimised to destroy something else or when it is used on a tool for which it was not designed, or if the FC or total exhaust flow exceeds a certain limit. El ectronics manufacturers and abatement tool manufacturers

15 The 50:50 SF 6 usage rates represent an average for the leading TFT-FPD manufacturing regions of Japan, Republic of

Korea and Taiwan. That proportion was provided by Nishida (2006) and Kim (2006).

16 One example of an internationally accredited testing method is Meyers et al . (2001).Volume 3: Industrial Processes and Product Use

6.22 2006 IPCC Guidelines for National Greenhouse Gas Inventories should ensure that the abatement system installed is pr operly sized and maintained and that the emission control device can meet or exceed the default emission factor highlighted in Table 6.6.



## 6.2.2.2 H EAT TRANSFER FLUIDS

The emission factor for the Tier 1 method is presented in Table 6.2. There is no emission factor for the Tier 2 method for estimating emissions from evaporation of heat transfer fluids.



# 6.2.3 Choice of activity data

Activity data for the electronics industry consists of da ta on gas sales and use or the annual amount of electronics substrate processed (e.g., m 2 of silicon processed for semiconductors ). For the more data-intensive Tier 2 methods, gas purchase data at the company or plant-level are necessary. For the Tier 1 methods, inventory compilers will need to determine the total surface area of electronic substrat es processed for a given year. Silicon consumption may be estimated using an appropriate edition of the World Fab Watch (WFW) database, published quarterly by Semiconductor Equipment & Materials International (SEMI) 17 . The database contains a list of plants (production as well as R&D, pilot plants, etc. ) worldwide, with information about location, design capacity, wafer size and much more. Similarly, SEMI’s ‘F lat Panel Display Fabs on Disk’ database provides an estimate of glass consumption for global TFT-FPD manufacturing. The activity data in Table 6.7 reflect design capacity figures. Semiconductor and TFT-FPD manufacturing plants are not operated at design capacities for sustained period s, such as a full year. Instead, the capacity fluctuates depending on product demand. For semiconductor manufacturing, publicly available industry statistics show that the global annual average capacity utilisation during the period 1991 – 2000 varied between 76 and 91 percent, with an average value of 82 percent and most probable value of 80 percent. When country-specific capacity utilisation data are not available, the suggested capaci ty utilisation for semiconductor manufacturing is 80 percent. This should be used consistently for a time series of estimates. For TFT- FPD manufacturing, publicly available capacity utilisation data are not available. The TFT-FPD manufacturing industry, like the semiconductor manufacturing industry, lowers product prices to maintain the highest practical plant capacity utilisation. By analogy, therefore, it is suggested to use 80 percent to estimate substrate glass consumption using the design capacities provided in Table 6.7 for co untry TFT-FPD manufacturers. For PV manufacturing, published capacity utilisation data ranges between 77 – 92 percent, with the average for the years 2003 and 2004 of 86 percent. Therefore, 86 percent is the recommended default figure for C u (see Equation 6.1) to use. When estimating emissions during PV manufacture, one should account for the fraction of the industry that actually employs FCs (C PV in Equation 6.1). Because recent surveys indi cate that between 40 – 50 percent of PV manufacture actually uses FC, and the usage trend may be increasing, the recommended default value for C PV is 0.5. Table 6.7 summarises the capacity for 2003, 2004 and 2005 fo r countries, which in total, account for more than 90 percent of world capacity in 2003.

17 The term ‘fab’ is synonymous with clean room/manufacturing f acility. Semiconductor and flat panel display manufacturing plants are often called fabrication plants , from which the abbreviation ‘fab’ follows.Chapter 6: Electronics Industry Emissions

2006 IPCC Guidelines for National Greenhouse Gas Inventories 6.23 T ABLE 6.7 C OUNTRY TOTAL SILICON (Si) AND GLASS DESIGN CAPACITIES (Mm 2 ) FOR 2003, 2004 AND 2005
Annual Si design capacities, Mm 2 Annual Glass design capacities, Mm 2
Country Totals 2003 1 2004 2 2005 2 2003 1 2004 2 2005 2

Australia 0.0008 0.0008 0.0008 NA NA NA

Austria 0.0201 0.0201 0.0201 NA NA NA
Belgium 0.0040 0.0040 0.0040 NA NA NA

Canada 0.0041 0.0041 0.0041 NA NA NA

China 0.1436 0.1982 0.3243 0.0432 0.0432 0.8154
Czech Republic 0.0057 0.0057 0.0057 NA NA NA

France 0.0653 0.0674 0.0674 NA NA NA
Germany 0.1622 0.1622 0.1622 NA NA NA
China, Hong Kong 0.0059 0.0059 0.0059 NA NA NA
Hungary 0.0006 0.0006 0.0006 NA NA NA

India 0.0128 0.0128 0.0128 NA NA NA

Ireland 0.0175 0.0430 0.0430 NA NA NA

Israel 0.0310 0.0310 0.0564 NA NA NA
Italy 0.0431 0.0431 0.0609 NA NA NA
Japan 0.9091 0.9235 0.9639 4.5746 5.3256 6.9201

Latvia 0.0019 0.0019 0.0019 NA NA NA
Malaysia 0.0284 0.0284 0.0284 NA NA NA

Netherlands 0.0301 0. 0301 0.0301 0.0209 0.0209 0.0209
Republic of Belarus 0.0077 0.0077 0.0077 NA NA NA

Russia 0.0250 0.0250 0.0325 NA NA NA

South Korea 0.3589 0. 3742 0.3937 5.8789 9.4679 12.4857
Singapore 0.1730 0.1730 0.1985 0.2821 0.2821 0.2821

Slovakia 0.0043 0.0043 0.0043 NA NA NA

South Africa 0.0021 0.0021 0.0021 NA NA NA

Sweden 0.0019 0.0019 0.0019 NA NA NA

Switzerland 0.0098 0.0098 0.0098 NA NA NA

Thailand 0.0000 0.0000 0.0094 NA NA NA
Turkey 0.0000 0.0000 0.0000 NA NA NA
United Kingdom 0.0597 0.0597 0.0936 NA NA NA

United States of America 0.6732 0.6921 0.7190 0.0000 0.0000 0.0000

Vietnam 0.0000 0.0000 0.0000 NA NA NA

Global Total 3.3206 3.4972 3.8849 15.0572 23.9959 33.7459

1 Country totals include fab in production

2 Country totals include fabs un der construction and announced. NA = not applicable.
Sources: Extractions from World Fab Wa tch Database, January 2004 Edition for Semi conductor Manufacturing and Flat Panel Display Fabs on Disk Database (Strategic Marketing Asso ciates, 2004a), October 2004 Edition for TFT-FPD Manufacturing (Strategic Marketing Associates, 2004b).Volume 3: Industrial Processes and Product Use

6.24 2006 IPCC Guidelines for National Greenhouse Gas Inventories T ABLE 6.8 C OUNTRY TOTAL PV PRODUCTION CAPACITY a FOR 2003, Mm 2

Australia 0.135

Austria 0.0307

Canada 0.0154

Denmark 0.00254

France 0.162
Germany 0.817
Italy 0.100
Japan 3.72
Norway 0.0138
Portugal 0.115

S. Korea 0.462
Spain 0.715

Sweden 0.377

Switzerland 0.00238
United Kingdom 0.0269

United States 1.02

a Capacities for all PV manufacturing technologies, includes those that may not use FCs during PV manufacture; World average capacity utilisation for 2003 = 86%. Source: IEA, 2004. PV participating survey countries.



# 6.2.4 Completeness

Complete accounting of emissions from the semiconductor industry should be achievable in most countries because there are a limited number of companies and plants. There are four issues related to completeness that should be addressed:

• Other by-products: A number of transformation by-products are generated as a result of FC use for chamber cleaning and etching. As hi ghlighted above, formation of CF 4 and C 2 F 6 can result from the decomposition of other FC gases. Also, CF 4 formation has been observed in the cleaning of low k CVD chambers. In this case, the Tier 3 method shoul d be used to accurately estimate emissions.

• New chemicals: Completeness will be an issue in the future as the industry evaluates and adopts new chemical processes to improve its products. Indust ry-wide efforts to reduce FC emissions are also accelerating the review of ne w chemicals. Consequently, good practice for this industry is to incorporate a mechanism that accounts for greenh ouse gases not listed in the IPCC Third Assessment Report (e.g., C 4 F 6 , C 5 F 8 , Fluorinerts TM , and Galdens ® ). These new FC materials have high GWPs or may produce high GWP byproduct emissions.

• Other sources: A small amount of FCs may be released during gas handling (e.g. distribution) and by sources such as research and development (e.g. university) scale plants and tool suppliers. These emissions are not believed to be significant (e.g., less than 1 percent of this industry’s total emissions).

• Other products or processes: FC use has been identified in the electronics industry in emissive applications including: micro-el ectro-mechanical systems (MEMS), 18 hard disk drive manufacturing, device testing (FC liquids), vapour phase reflow soldering, 19 and precision cleaning. 20

18 Emissions from micro-electro- mechanical systems (M EMS) manufacturing may be estim ated using methods similar to

those used for the other electronic sub sectors. Company-specific emission and abatement factors are required. Very small amounts of FCs are also used in and resear ch and development la boratories/facilities.Chapter 6: Electronics Industry Emissions

2006 IPCC Guidelines for National Greenhouse Gas Inventories 6.25 

# 6.2.5 Developing a consistent time series

Use of FCs by the semiconductor industry began in the la te 1970s and accelerated sign ificantly beginning in the early 1990s. Determining a base year emissions level ma y present difficulties because few data are available for emissions occurring before 1995. If historical emissions estimates were based on simple assumptions (e.g., use equals emissions), then these estimates could be improved by applying the methods described above. If historical data are not available to permit use of a Tier 3 or 2 method, then the Tier 1 method using default emission parameters can be used retrospectively. Both Tier 1 and Tier 2 could then be applied simultaneously for the years in which more data become available to provide a comparison or benchmark. This should be done according to the guidance provided in Volume 1, Chapter 5.

In order to ensure a consistent em issions record over time, an invent ory compiler should recalculate FC emissions for all years reported whenever emissions calculation procedures are changed (e.g., if an inventory compiler changes from the use of default values to actual values determined at the plant level). If plant-specific data are not available for all years in the time series, the inventory compiler will need to consider how current plant data can be used to recalculate emissions for these years. It may be possible to apply current plant-specific emission parameters to sales data from previous years, provided that plant operations have not changed substantially. Such a recalculation is re quired to ensure that any changes in emission trends are real and not an artefact of changes in procedure.


# 6.3 UNCERTAINTY ASSESSMENT

Use of the Tier 3 method will result in the least uncertain inventory. Given the limited number of plants and the close monitoring of production processes at the plant level, collection of data for use in Tier 2b or Tier 3 methods should be technically feasible. Inventory compilers should seek the advice of the industry on uncertainties, using the approaches to obtaining expert judgement outlined in Volume 1, Chapter 3.
Of all the methods, Tier 1 is the mo st uncertain. Using a single factor to account for the FC emissions from the diversity of semiconductor products is a glaring simplification. The factors presented in Table 6.2 are heavily weighted toward the manufacture of advanced vintage-late-1990s memory and logic products, having 3 to 5 layers, respectively, manufactured on the silicon wafe r. The factors for countries that are currently manufacturing products at the leading-edge of technology (and are not using measures to reduce FC emissions) would be larger, while countries that manufacture products that use older technologies or manufacture simpler devices would use the same or an even smaller factor.

The Tier 1 emissions factors for TFT-FPD manufacturin g represents a weighted average of the estimated aggregate PFC emissions per unit area of substrate gl ass consumed during TFT-FPD manufacture for the area where data were available (Burton, 2004b). The estimated emissions reported for Japan used Tier 2b factors for semiconductor manufacturing from Good Practice Guidance and Uncertainty Management in National Greenhouse Gas Inventories (IPCC, 2000) in semiconductor manufacturing (Nishida et al ., 2004). For emissions from Taiwan’s TFT-FPD manufacturers, the method for estimating emissions was not reported (Leu et al ., 2004). However, subsequently Leu (2004) reported an aggregate emission factor having a similar magnitude to that developed by Burton (2004b). The uncertainty in the Tier 1 emissions factor for TFT-FPD manufacture is probably large, but not known at this time. When using Tier 3 method for semiconductor and TFT-FPD manufacturing, the resultin g estimates of emissions will be more accurate than the Tier 2a, 2b or Tier 1 methods, on the order of ± 30 percent (95 percent confidence interval). Uncertainty in the efficacy of emission control technology app ears to contribute most to this uncertainty, especially the variability in the uptime of emission control devices and in flow rates to emission control devices that may exceed device design limits.

Estimates of emissions from us ing heat transfer fluids using the Tier 2 method will be more accurate than Tier 1 method, of the order of ± 20 percent (95 percen t confidence interval).



# 6.3.1 Emission factor uncertainties

The uncertainties in the emission factors suggested for the Tier 2b and 2a methods are shown in Table 6.9 for semiconductor manufacturing and Table 6.10 for TFT-FPD manufacturing. The factors were developed

19 Emissions from vapour phase reflow solder ing may be estimated to equal annual net FC purchases for maintaining vapour

phase reflow soldering equipment.

20 Emissions from precision cleaning are to be accounte d for in Section 7.2 (Sol vents) of this Volume.Volume 3: Industrial Processes and Product Use

6.26 2006 IPCC Guidelines for National Greenhouse Gas Inventories specifically for this guidance. For Tier 2b, relative errors for each entry (process and ga s in the case of Tier 2b) were estimated as the standard deviation of the factors pr ovided by an expert group, normalised to the simple (unweighted) average, rounde d to one significant figure. 12 The estimate for each value was then doubled to estimate the 95 percent co nfidence interval. The same procedure was used to estim ate the relative errors for product-formation factors (B). The corresponding estimates for the Tier 2a method were derived for the Tier 2b estimates, using the estimates of gas usage employed in development of the emission factors (see Section 6.2.2 Tier 2). Tier 1 emission factors will have an uncertainty range th at is skewed towards values close to zero extending up to 200 percent (95 percent confidence interval for semiconductor and TFT-FPD manufacture). Uncertainty estimates for PV manufacturing are not available.



# 6.3.2 Activity data uncertainties

Gas consumption constitutes the unit of activity to esti mate emissions during semic onductor, TFT-FPD and PV manufacture for the Tier 2a and 2b methods. Gas consumption can be either measured or estimated from data on gas purchases, and requires knowledge of h, the unused gas returned to gas suppliers in the shipping containers. The uncertainties (95 percent confidence interval) in gas consumption and h, whether measured or estimated using expert judgment are shown in Table 6.10, Relativ e Errors (95 percent confid ence interval) for Activity Data for Tier 2a and 2b Methods for Semiconductor and TFT-FPD Manufacture. For Tier 1 method, the unit of activity is substrate consumption. Uncertainties in the Tier 1 activity data are attributed principally to missing data entries in the WF W and FPD databases. An estimate of the reliability of entries derived from the WFW in Table 6.7 is ± 10 percent (95 percent confidence interval), which reflects errors due to missing and incorrect entries in the database. The 95 percent confidence interval in capacity utilisation over the 1991-2000 period is ± 12 percentage points (i.e., from 70 percent utilisation to 94 percent utilisation). The corresponding entries for TFT-FPD and PV manufacture are assumed to be similar to those for semiconductor manufacturing.Chapter 6: Electronics Industry Emissions2006 IPCC Guidelines for National Greenhouse Gas Inventories6.27TABLE6.9TIER2DEFAULT ESTIMATES OF RELATIVE ERRORS(%)FOR EMISSION FACTOR FORFCEMISSIONS FROM SEMICONDUCTOR MANUFACTURING,95PERCENT CONFIDENCE INTERVALS*Greenhouse Gases with TAR GWP Greenhouse Gaseswithout TAR GWPNon-GHGsProducing FCBy-productsProcess Gas (i) CF4C2F6CHF3CH2F2C3F8c-C4F8NF3RemoteNF3SF6C4F6C5F8C4F8O F2COF2Tier 2a1-Ui15 30 100 400 20 80 400 70 300 30080†40 NA NABCF4NA 90 300 200 60 100 200 200 NA 200100†80 200 200BC2F6NA NA NA NA NA 200 NA NA NA 200 200 NA NA NABC3F8NA NA NA NA NA NA NA NA NA NA NA 40 NA NATier 2bEtch 1-Ui60100100700NA 200 NA 300 300 300200†NA NA NACVD 1-Ui10 30 NA NA 0.4 30 400 70 NA NA30†40 NA NAEtch BCF4NA 200 300200NA 200 NA NA NA 200200†NA NA NAEtch BC2F6NA NA NA NA NA 200 NA NA NA 200200†NA NA NACVD BCF4NA 80 NA NA 60 60 200200 NA NA60†80 200 200CVD BC2F6NA NA NA NA NA NA NA NA NA NA NA NA NA NACVD BC3F8NA NA NA NA NA NA NA NA NA NA NA 40 NA NANotes: NA denotes not applicable based on currently available information*Values that exceed 100% implya distribution that is skewed towards valuesclose to zero extending up to the value given.†Estimate relies on an analogy to c-C4F8as the data for C5F8were insufficient to estimate a confidence interval.Volume 3: Industrial Processes and Product Use2006 IPCC Guidelines for National Greenhouse Gas Inventories6.28TABLE6.10TIER2DEFAULT ESTIMATES OF RELATIVE ERRORS(%)FOR EMISSION FACTOR FORFCEMISSIONS FROMLCDMANUFACTURING,95PERCENT CONFIDENCE INTERVALSGreenhouse Gases with TAR GWP Greenhouse Gaseswithout TAR GWPNon-GHGsProducing FCBy-productsProcess Gas (i) CF4C2F6CHF3CH2F2C3F8c-C4F8NF3RemoteNF3SF6C4F6C5F8C4F8O F2COF2Tier 2a1-Ui50 NA 8 NA NA 5 70 20 20 NA NANA NA NABCF4NA NA 30 NA NA 40 NA NA NA NA NA NA NA NABCHF3NA NA NA NA NA 20 NA NA NA NA NA NA NA NABC2F6NA NA 40 NA NA NA NA NA NA NA NA NA NA NATier 2bEtch 1-Ui501008NANA 5 NA 60 NA NA NA NA NA NACVD 1-UiNA NA NA NA NA NA 70 20 6 NA NA NA NA NAEtch BCF4NA NA 30NANA 40 NA NA NA NANA NA NA NAEtch BCHF3NA NA NA NA NA 20 NA NA NA NA NA NA NA NAEtch BC2F6NA NA 40 NA NA NA NA NA NA NANA NA NA NACVD BCF4NA NA NA NA NA NA NANA NA NA NA NA NA NACVD BC2F6NA NA NA NA NA NA NA NA NA NA NA NA NA NACVD BC3F8NA NA NA NA NA NA NA NA NA NA NA NA NA NANotes: NA denotes not applicable based on currently available informationChapter 6: Electronics Industry Emissions

2006 IPCC Guidelines for National Greenhouse Gas Inventories 6.29 

# 6.4 QUALITY ASSURANCE/QUALITY CONTROL (QA/QC), REPORTING AND DOCUMENTATION

6.4.1 Quality Assurance/Quality Control (QA/QC)

It is good practice to conduct quality control checks as outlined in Volume 1, Chapter 6, and an expert review of the emissions estimates. Additional quality control checks as outlined in Volume 1 and quality assurance procedures may also be applicable, particularly if higher tier methods are used to determine emissions from this source category. Inventory compilers are encouraged to use higher tier QA/QC for key categories as identified in Volume 1, Chapter 4. Additional general guidance for higher tier QA/QC procedures is also included in Volume 1, Chapter 6. Due to the highly competitive nature of the semiconductor industry, provisions for handling confidential business information should be incorporated into the verification process. Methods used should be documented, and a periodic audit of the measurement and calculation of data should be considered. A QA audit of the processes and procedures should also be considered.



# 6.4.2 Reporting and Documentation

Care should be taken not to include emissions of HFCs used as ODS substitutes with those used in semiconductor manufacturing. It is good practice to document and archive all information required to produce the national emissions inventory estimates as outlined in Volume 1, Section 6.11. It is not practical to include all documentation in the national inventory report. However, the inventory should include summaries of methods used and references to source data such that the report ed emissions estimates are transparent and steps in their calculation may be retraced. Explicit reporting on emissions in this industry would improve the transparency and comparability of emissions. As a number of FCs gases are emitted by this industry, reporting by individual gas species rather than by chemical type would also improve the transparency and usefulness of this da ta. Efforts to increase transparencyshould take into account the protection of confidential business information related to specific gas use. Countrylevel aggregation of gas-specific emissi ons data should protect this information in countries with three or more manufacturers. Table 6.11, Information Necessary for Full Transparency of Estimates of Emissions from Semiconductor Manufacturing, shows the supporting information necessary for full transparency in reported emissions estimates. Good practice for Tier 3 is to document the development of company-specific emission factors, and to explain the deviation from the generic default values. Given confidentiality concerns, inventory compilers may wish to aggregate this information across ma nufacturers. In cases where manufact urers in a country have reported different emission or conversion factors for a given FC and process or process type, inventory compilers may provide the range of fact ors reported and used.Volume 3: Industrial Processes and Product Use

6.30 2006 IPCC Guidelines for National Greenhouse Gas Inventories T ABLE 6.11 I NFORMATION NECESSARY FOR FULL TRANSPARENCY OF ESTIMATES OF EMISSIONS FROM
ELECTRONICS MANUFACTURING

Data Tier 1 Tier 2a Tier 2b Tier 3 Total surface area of electronics substrate processed (e.g., m 2 silicon,

m 2 glass) X

Capacity utilisation for semi conductor, TFT-FPD and PV manufacturing X

Fraction of PV manufacturing capaci ty that uses FC gases X
Emissions of each FC (rather than aggregated for all FCs) X X X
Sales/purchases of each FC X Mass of each FC used in each process or process type X X
Fraction of each FC used in processes with emission control technologies X X X

Use rate for each FC for each process or process type (This and following information is necessary only if default value is not used) X

Fraction of each FC transformed into CF 4 for each process or process type X

Fraction of gas remaining in shipping container X
Fraction of each FC destroyed by emission control technology X

Fraction of CF 4 by-product destroyed by emission control technology XChapter 6: Electronics Industry Emissions

2006 IPCC Guidelines for National Greenhouse Gas Inventories 6.31 

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