EXHIBIT 6 

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EXHIBIT 1 

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IN THE UNITED STATES DISTRICT COURT 

FOR THE WESTERN DISTRICT OF TEXAS 

WACO DIVISION 

STC.UNM, 

Plaintiff, 

v. 

SAMSUNG ELECTRONICS CO., LTD., 

SAMSUNG ELECTRONICS AMERICA, 

INC., SAMSUNG SEMICONDUCTOR, INC., 

and SAMSUNG AUSTIN 

SEMICONDUCTOR, LLC, 

Defendants. 

Case No. 6:19-cv-329-ADA 

DECLARATION OF JEFFREY BOKOR, PH.D. 

IN SUPPORT OF 

SAMSUNG’S OPENING CLAIM CONSTRUCTION BRIEF 

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I, Jeffrey Bokor, hereby declare, affirm and state the following: 

1. The facts set forth below are known to me personally and I have firsthand 

knowledge of them. 

2. I make this Declaration in support of Samsung’s Opening Claim Construction 

Brief in this action. 

3. A copy of my CV as well as a listing of cases in which I have testified as an expert 

at trial or by deposition in the last four years is attached as Exhibit A to this Declaration. 

4. I am being compensated at the rate of $600 per hour for my work in connection 

with this action. My compensation in this action is not dependent in any way on the contents of 

this Declaration, the substance of any further opinions or testimony that I may provide, or the 

ultimate outcome of this action. 

5. I received a B.S. degree in Electrical Engineering from the Massachusetts Institute 

of Technology in 1975, an M.S. degree in Electrical Engineering from Stanford University in 1976, 

and a Ph.D. degree in Electrical Engineering from Stanford University in 1980. 

6. From 1980 until 1992, I was employed at AT&T Bell Laboratories, where I worked 

on laser physics, optoelectronics, semiconductor physics, and integrated circuit technology, among 

other topics. In particular, I worked on semiconductor surface and interface physics, advanced 

lithography for integrated circuits, and silicon metal-oxide-semiconductor field-effect transistor 

(MOSFET) device design and fabrication technology. 

7. In 1992, I joined the faculty of the department of Electrical Engineering and 

Computer Sciences (EECS) at the University of California at Berkeley (UCB) as a Professor, with 

a joint appointment as a Faculty Scientist at the Lawrence Berkeley National Laboratory (LBNL). 

In 2008, I was appointed as a Senior Faculty Scientist at LBNL, and I continue to hold that title. I 

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also currently hold the Paul Gray Distinguished Professorship (an endowed Chair) in Engineering 

at UCB. From 2012-2017, I served as Associate Dean for Research in the College of Engineering 

at UCB. In 2017, I was appointed as Chair of the Electrical Engineering Division in the EECS 

Department at UCB, and Associate Chair of the Department. In July 2019, I was appointed as 

Chair of the EECS Department, and I continue to serve in this capacity. 

8. Since joining the EECS Department at UCB, I have continued to do research on 

silicon integrated circuit technologies, including MOSFET transistor design, and complementary 

metal-oxide-semiconductor (CMOS) fabrication process technology. In particular, during the late 

1990’s and early 2000’s I worked and published extensively on FinFET technology. 

9. At UCB, I have taught classes at both the undergraduate and graduate level in 

optics, lasers, semiconductor physics and devices, and semiconductor process technology. 

10. I have been elected Fellow of the Institute for Electrical and Electronic Engineers 

(IEEE), the American Physical Society (APS), and the Optical Society of America (OSA). During 

my career, I have served on numerous Program Committees, Scientific Advisory Committees, and 

Technical Advisory Boards. I have served as Chair or Co-Chair of numerous technical 

conferences. I have published over 330 articles in the scientific and technical literature and have 

been awarded 12 patents in the areas of electronic devices and nanofabrication technologies. 

11. In all, I have over 30 years of experience working and teaching in the field of 

semiconductor device design and engineering, micro- and nano-fabrication, and CMOS process 

technology. 

12. I have reviewed the U.S. Patent No. 9,142,400 (“the ’400 patent”) and its file 

history. 

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13. I have been informed and understand that the plain and ordinary meaning, if any, 

for a claim term in a patent is the meaning that the term would have to a person of ordinary skill 

in the art in question at the time of the invention. 

14. I am informed and understand that the relevant period for the ’400 patent may range 

from around the provisional filing date of July 17, 2012 to around the non-provisional filing date 

of July 17, 2013 

15. It is my opinion based upon a review of the patent file histories that a person of 

ordinary skill in the art (“POSITA”) during this period would have had a master’s degree or higher 

in material science, physics, electrical engineering, or related disciplines, and three to four years 

of experience in the design and fabrication of field effect transistors (FETs). More education can 

supplement practical experience and vice versa. I was one of at least ordinary skill in the art during 

this period. 

16. I have been asked for my opinion regarding the meaning of certain claim terms 

appearing in the claims of the ’400 patent. My opinion is based on my experience as one of at least 

ordinary skill in the field of the ’400 patent during the relevant period, my experience interacting 

with others of ordinary skill in the art during this time, as well as contemporaneous literature during 

this time. 

“heteroepitaxial layer” 

17. I am informed and understand that Samsung proposes the proper construction for 

the term “heteroepitaxial layer” is “an epitaxially grown crystalline layer of material different from 

the crystalline material on which it is grown.” STC’s proposed construction is “the layer of 

material, different from the material of the seed area, that has been grown such that its atoms line 

up as if they are a continuation of the starting crystal structure of the seed area material.” For the 

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reasons set forth below, it is my opinion that Samsung’s proposed construction is consistent with 

how a POSITA would understand this term, whereas STC’s proposed construction would be 

unduly narrow and inconsistent with its customary meaning to a POSITA. 

18. Heteroepitaxial layer is a term of art within the field of material science, physics, 

electrical engineering, and other related disciplines related to the fabrication of semiconductor 

devices. The Web of Science database of scientific journal publications from the year 2012 or 

earlier shows over 310 publications with the terms “heteroepitaxy” or “heteroepitaxial” in the title 

and over 800 publications with one or both of those terms appearing somewhere within the text of 

the publication. 

19. Heteroepitaxial growth is one form of epitaxial growth, with homoepitaxial growth 

being another. The two forms share many similarities, with one key difference being that 

heteroepitaxial growth refers to the growth of a layer of one crystalline material (the epitaxial 

layer) that is a different material than the underlying crystalline material (e.g., the substrate) on 

which it is grown (indicated by the prefix “hetero”), while homoepitaxial growth refers to the 

growth of the same crystalline material (indicated by the prefix “homo”). See e.g., Exhibit 2, 

US2008/0303033, at para 24 (“When the crystals grown are the same of [sic] those of the substrate, 

the growth is ‘homoepitaxial’ and when the crystals grown are different from those of the substrate, 

the growth is ‘heteroepitaxial.’”). 

20. The crystalline property of the materials is important for epitaxial growth, because 

there is a distinct relationship between the crystalline structures of the two materials in epitaxial 

growth. This is in contrast to a more general process of depositing a layer of one material on 

another, where the deposited material may be non-crystalline (or amorphous), or otherwise lack 

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such a relationship between the respective crystal structures. A POSITA would not consider 

growing a non-crystalline layer of material to be heteroepitaxial growth. 

21. One way to conceptualize why there is a relationship between the crystalline 

structures is to consider the atoms at the surface of the substrate material. Unlike the atoms within 

the interior where each atom is bonded to neighboring atoms on all sides (in accordance with the 

atomic structure of the element), the surface atoms have “dangling bonds” that effectively serve 

as bonding sites that attract the next layer of atoms. Materials grown by epitaxy are guided by this 

“template” at the exposed surface of the material, and the new material must have a crystal 

structure that is compatible with the template. Growing an incompatible material on the template 

is possible, but it will produce a layer that lacks the relationship between the respective crystal 

structures, and would ordinarily not be considered an epitaxially grown layer of material by a 

POSITA. 

22. Whether or not the deposited layer can be epitaxially grown on the substrate 

depends on the material properties of the two respective materials, including the respective crystal 

structures. For a homoepitaxial layer, because the growth material is the same as the underlying 

material, all the material properties (including the crystal structures) of the two are likewise the 

same. Therefore, in homoepitaxial growth, the new atoms can “line up as if they are a continuation 

of the starting crystal structure of the seed area material” with the new layer taking on the same 

crystal structure, preserving the same symmetry properties of the original crystal structure. 

23. For heteroepitaxial growth, because the layers of material are different, this 

“continuation of the starting crystal structure” may not necessarily be true, and depends on the 

crystal structure of the two respective materials. For example, if germanium (having a diamond 

cubic crystal structure) is epitaxially grown on silicon (also having a diamond cubic crystal 

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structure), the resulting heteroepitaxial layer of germanium would have atoms that “line up as if 

they are a continuation of the starting crystal structure of the seed area material.” In this case, the 

same crystal structure is preserved (i.e., continued), and the epitaxially grown germanium atoms 

will be aligned in accordance with the diamond cubic crystal structure (i.e., the same crystal 

structure as in the silicon). Such a heteroepitaxial layer with the same crystal structure is an 

example of what the ’400 patent refers to as a grown film that has the same symmetry as the seed 

area material. ’400 patent at 6:19-25. As is known in the art, a given crystal structure can be 

defined by the set of symmetry properties (or “symmetry group”), and therefore, two identical 

crystal structures necessarily share the same symmetry group. 

24. On the other hand, it is possible for heteroepitaxial growth to occur where the 

grown atoms do not “line up as if they are a continuation of the starting crystal structure of the 

seed area material.” This would occur if the two different layers of material have different crystal 

structures. In this case, the original crystal symmetry is broken at the interface where the new 

material is grown, where there is an abrupt change to the crystal structure and where the atoms are 

located in space. Therefore, the atoms do not “line up as if they are a continuation of the starting 

crystal structure of the seed area material.” 

25. Well-known examples of such heteroepitaxial layers in the art include materials 

with hexagonal crystal structure epitaxially grown on materials with cubic crystal structures and 

vice versa. See e.g.,

 Exhibit 3, US 6,083,812 at 4:4-8 (disclosing “heteroepitaxy of (001) Si on the 

rhombahedral [sic] plane of sapphire in which a cubic semiconductor 

heteroepitaxially grows on a hexagonal substrate”) (emphasis added). Here, 

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silicon (“Si”) has a diamond cubic crystal structure, and sapphire has a hexagonal 

crystal structure. 

 Exhibit 4, US 8,324,660 at 15:3-9 (disclosing growth of “hexagonal 

semiconductors such as III-nitrides on Si ... [where] Si is a cubic crystal); 15:31-

58 (describing the growth of hexagonal materials on the (111) surface of a cubic 

silicon substrate, and referring to the region of such growth as “heteroepitaxial 

region,” noting that “if small areas of hexagonal semiconductor material are 

desired for device active areas, the heteroepitaxial overgrowth regions expanding 

from the individual openings can be planarized”); see also id. at Figs. 5A and 5B 

showing heteroepitaxial growth of hexagonal crystalline material on the silicon 

(cubic) substrate. 

 Exhibit 5, US 2011/0147791 at para 0046 (“Heteroepitaxy is a kind of epitaxy 

performed with materials that are different from each other”) (emphases added); 

para 0065 (disclosing “a hexagonal crystal semiconductor layer may be grown on 

the {111} plane of a face centered cubic substrate”) (emphases added); para 

0102 (disclosing “growing {0001} wurtzite [a form of hexagonal crystal 

structure] InGaN alloys ... on the {111} plane of a cubic crystal...”). 

26. In these examples, the heteroepitaxial layers have a new and different crystal 

structure than the material on which it is grown (e.g., the substrate). Importantly, this means that 

the crystal structure symmetry is different between the deposited material and the substrate 

material, and the relative position of the atoms within the crystal structure are likewise different. 

This is illustrated in the three-dimensional perspective views of exemplary cubic and hexagonal 

crystal structures below. 

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27. The left side of the figures above show the respective “unit cells” of a simple cubic 

crystal structure (top) and a hexagonal crystal structure (bottom). A unit cell is the smallest 

structure that has the same symmetry properties as the full crystal, and the unit cell is repeated 

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throughout the crystal structure. The repeating of the unit cell means the atoms “line up” at 

positions in space consistent with the repeating unit cell (as depicted in the right side of the figures). 

Therefore, a material with a cubic crystal structure has a unit cell in the shape of a cube, and that 

cubic unit cell is repeated in all directions to fill up the available space (as depicted on the right 

side of the top figure). On the other hand, a material with a hexagonal crystal structure has a unit 

cell in the shape of a hexagonal prism which is repeated in all directions to fill up the available 

space (as depicted on the right side of the bottom figure). Therefore, atoms in a hexagonal crystal 

structure “line up” at positions in space consistent with the repeating hexagonal unit cell, which is 

different from how atoms line up for the cubic unit cell, as shown above. 

28. Accordingly, in these examples of heteroepitaxy cited in paragraph 25 above where 

a material with a hexagonal crystal structure is epitaxially grown on a material with a cubic crystal 

structure (or vice versa), a POSITA would understand that the grown layer is a heteroepitaxial 

layer, even though the newly grown atoms do not “line up” as if they are a “continuation” of the 

original crystal structure. A POSITA would understand that if the atoms line up as a continuation 

of the original crystal structure, they would have the same crystal structure. Instead, the newly 

deposited atoms conform to a different crystal structure with lattice sites that differ from the sites 

of the original crystal structure if it had “continued.” 

29. Based on these examples of heteroepitaxial layers described in the art where the 

new material is grown on a material with a different crystal structure, it is clear that STC’s 

proposed construction is incorrect. STC’s construction adds a requirement that the “atoms line up 

as if they are a continuation of the starting crystal structure of the seed area material” which would 

exclude these layers of material that a POSITA would understand to be a heteroepitaxial layer. 

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30. Further, based on my review of the ’400 patent, it is my opinion that the term 

“heteroepitaxial layer” is also used broadly consistently within the ’400 patent specification, 

consistent with the ordinary meaning within the art. In particular, the ’400 patent expressly states 

that “[i]n any of the embodiments of FIGS. 5 to 9, the seed areas can comprise any of the 

semiconductor materials described for seed areas in the present disclosure; and the materials 

subsequently grown thereon can comprise any of the heteroepitaxial grown semiconductors

described herein.” ’400 patent at 8:24-29. One such material disclosed for the seed area is 

sapphire. Id. at 5:6-13 (“The Nanostructured pedestals 12 are comprised of any suitable material 

capable of acting as a seed layer for subsequent epitaxial growth... Other suitable materials include 

... sapphire.”). A heteroepitaxial layer material disclosed is germanium. Id. at 6:7-17 (“In an 

embodiment, the heteroepitaxial layer comprises a Group III-V semiconductor material... The 

techniques described also apply to semiconductor materials other than III-V materials, such as 

Ge.”). 

31. Therefore, the ’400 patent uses the term heteroepitaxial layer to include an 

epitaxially grown layer of germanium (having a diamond cubic crystal structure) on sapphire 

(having a hexagonal crystal structure), even though the germanium atoms do not copy the 

underlying sapphire crystal structure, or otherwise line up as if they are a continuation of the 

starting crystal structure, as explained above. 

I hereby declare under penalty of perjury that the foregoing is true and accurate to the 

best of my knowledge. 

Executed on December 12, 2019 in Berkeley, California. 

Jeffrey Bokor, Ph. D. 

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EXHIBIT A 

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 Updated December 9, 2019 

Jeffrey Bokor, Ph.D. 

Paul R. Gray Distinguished Professor Phone: (510)642-4134 

Chair, EE Division 

Associate Chair, EECS Department 

jbokor@eecs.berkeley.edu 

University of California www.eecs.berkeley.edu/~jbokor 

Berkeley, CA 94720 

Expertise 

 Electronics 

 Nanofabrication 

 Nanotechnology 

 Device Physics 

 Nanomagnetics and Spintronics 

 Optics and Optoelectronics 

 Laser Technology 

 Semiconductor Physics 

 Semiconductor Process 

 VLSI Technology 

Professional Summary 

Education 

Year College/University Degree 

1980 Stanford University Ph.D., Electrical Engineering 

1976 Stanford University MS, Electrical Engineering 

1975 Massachusetts Institute of Technology BS, Electrical Engineering 

Employment History 

From: 1993 University of California, Department of Electrical Engineering and 

Computer Science 

To: Present Berkeley, CA 

 Position: Professor 

 Department Chair, Department of Electrical Engineering and 

Computer Sciences, 2019-present 

 Chair, EE Division, Associate Department Chair, Department of 

Electrical Engineering and Computer Sciencse, 2017-2019 

 Associate Dean for Research, College of Engineering, 2012-

2017 

 Joint Appointment: 2008-present , Faculty Senior Scientist, 

Lawrence Berkeley National Laboratory 

 Joint Appointment: 2004-2012, Deputy Director for Science, 

The Molecular Foundry, Lawrence Berkeley National 

Laboratory 

 Joint Appointment: 1993-2004, Group Leader for Advanced 

Lithography, Center for X-ray Optics, Lawrence Berkeley 

National Laboratory 

Current research interests: 

 Nanomagnetics and spintronics 

 Ultrafast laser studies of materials 

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Curriculum Vitae - Jeffrey Bokor 

Resume of Jeffrey Bokor, Ph.D. 2 

 Carbon electronics 

 Nanophotonics 

Classroom teaching: 

 Undergraduate and graduate courses in semiconductor physics 

and technology 

 Undergraduate and graduate courses in optical physics and 

engineering 

 Freshman seminar introduction to electrical engineering 

From: 1980 AT&T, Bell Laboratories 

To: 1993 Holmdel and Murray Hill, NJ 

 Position: 

 1990-93 

1987-90 

1980-87 

Ultra-Large Scale Integrated Circuits (ULSI) Technology Research 

Department. Department Head. Murray Hill, NJ Leader of group of 

15 Ph.D. scientists, 35 total technical personnel. Responsible for 

directing research to create technologies relevant to silicon IC 

manufacturing in the year 2000. Also responsible for continuing 

improvement and operation of 20,000 sq. ft. Class 100 research 

cleanroom facility. Experience included: 

 ULSI Process integration 

 Deep sub-micron silicon MOSFET device physics 

 Device and circuit design 

 Advanced process and device modeling software 

 Advanced lithography 

Laser Science Research Department. Department Head, Holmdel, 

NJ. Leader of group of 10 Ph.D. scientists, 20 total technical 

personnel. Managed diverse program of basic research in optical 

physics. Conducted high visibility research program, including: 

 X-ray lithography 

 Nonlinear optics 

 Picosecond optoelectronics 

 Femtosecond phenomena in electronic materials 

 Fiber optics 

 Atomic physics 

Quantum Electronics Research Department. Member of Technical 

Staff, Holmdel, NJ. Independently directed basic research, 

including: 

 Nonlinear optics 

 Picosecond optoelectronics 

 Semiconductor device physics 

 Ultraviolet laser technology 

Major Research Accomplishments (1980-Present) 

 Demonstration of spin-transfer-torque magnetic recording (2019) 

 Demonstration of 7 nm magnetic memory using scanned probe magnetic tunnel 

junction readout (2018) 

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Curriculum Vitae - Jeffrey Bokor 

Resume of Jeffrey Bokor, Ph.D. 3 

 Experimental demonstration of ultrafast (<10 psec) magnetic switching by pure 

charge current pulses (2017) 

 High performance bottom-up chemically synthesized graphene nanoribbon transistors 

(2017) 

 Experimental demonstration of the ultimate lowest switching energy set by 

fundamental physics (Landauer’s principle) in single-bit operations on nanomagnetic 

memory bits (2016) 

 Demonstration of spin transfer torque switching in sub-10 nm size magnetic tunnel 

junctions (2016) 

 Demonstration of fluid-suspended magnetic particle manipulation using multiferroic 

magnetic actuation (2015) 

 Direct optical detection of current induced spin accumulation in non-magnetic metals 

(2015) 

 Demonstration of sub-nsec signal propagation in nanomagnetic logic (2015) 

 Electric field control of magnetic domain walls for manipulation of magnetic particles 

in microfluidics (2014) 

 High performance nanoscale solution processed carbon nanotube transistors (2013) 

 Bottom-up chemically synthesized graphene nanoribbon transistors (2013) 

 Nanoscale hyperspectral imaging with tapered plasmonic “Campanile” tip (2012) 

 Demonstration of nanomagnetic logic signal propagation (2012) 

 Demonstration of fundamental thermodynamic limit of energy dissipation in 

magnetic memory and logic (2011) 

 Demonstration of bandgap and sub-band formation in graphene nanomesh 

superlattice transistors (2010) 

 Self-assembly of gold nanoparticle chain structures for nanophotonics using DNA 

origami (2010) 

 Measurement of Schottky contact junction capacitance, doping profiles and carrier 

mobility in single semiconductor nanowire and carbon nanotube transistors using 

ultrasensitive C-V measurements (2009) 

 Label-free DNA biosensors using functionalized carbon nanotube transistors (2009) 

 Directed assembly of nanophotonic device structure using DNA nanotechnology 

(2009) 

 Theory of spin-dependent scattering in silicon MOSFET transistors (2009) 

 Proposed new concepts for nanomagnetic logic technology (2008) 

 Study of spin-dependent scattering from impurity donors in silicon MOSFETs for use 

in quantum computing (2007) 

 Measurement of spin coherence of antimony donors in silicon near silicon dioxide 

interfaces (2006) 

 First observation of Stark tuning of donor electron spins in silicon, a key step towards 

implementation of quantum logic in silicon technology (2006) 

 First monolithic integrated circuit with both carbon nanotube and silicon MOS 

transistors (2004) 

 Development of a monolithic inkjet printhead array capable of sub-3 m droplet 

generation (2004) 

 Study of surface and bulk acoustic phonon excitations in superlattices using 

picosecond ultrasonics (2003) 

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Curriculum Vitae - Jeffrey Bokor 

Resume of Jeffrey Bokor, Ph.D. 4 

 Invention and demonstration of “spacer lithography”, a sub-10 nm patterning 

technology for nano-catalysts and DNA label-free hybridization detection (2003) 

 Development of 10 nm gate-length MOSFET devices (2002) 

 Demonstration of extreme ultraviolet lensless Fourier transform holography (2001) 

 Demonstration of 30 nm lithography using extreme ultraviolet radiation (2001) 

 Demonstration of aberration testing and alignment optimization of a commercial 

prototype four-mirror ring field extreme ultraviolet optical system using atwavelength interferometry (2000) 

 Development of complementary silicide source/drain technology for sub-20 nm 

MOSFET devices (2000) 

 Development of picosecond ultrasonic characterization of Mo/Si extreme ultraviolet 

multilayer reflectors (1999) 

 Development of 17 nm gate-length FinFET devices (1999) 

 First demonstration of the “FinFET”, a manufacturable double-gate MOSFET with 25 

nm gate-length (1998) 

 Development of at-wavelength defect detection metrology for extreme ultraviolet 

lithography (1998) 

 Co-invention and demonstration of the phase-shifting, point diffraction 

interferometer, and application to high-accuracy wavefront metrology of extreme 

ultraviolet lithography optics (1996) 

 First demonstration of working MOS devices fabricated with extreme ultraviolet 

lithography (1996) 

 Direct, quantitative measurement of saturation velocity and overshoot velocity in 

MOS inversion layers (1994) 

 Demonstration of interferometry at extreme ultraviolet wavelengths for 

characterization of lithography optics (1994) 

 First direct observation of non-thermal energy distributions and thermalization 

dynamics in laser-excited metal films (1992) 

 Development of 89 GHz f T Si MOSFET transistors with 0.15 mm channel length 

(1992) 

 First feasibility demonstration of diffraction-limited extreme ultraviolet projection 

lithography (1990) 

 First direct observation of surface state kinetics during semiconductor surface 

recombination (1989) 

 Invention and demonstration of the coplanar vacuum photodiode, an ultrafast, high 

sensitivity photodetector for the visible and ultraviolet (1987) 

 First demonstration of time-resolved photoemission for measurement of picosecond 

electronic signals in integrated circuits (1986) 

 First direct detection of band-gap states at GaAs Schottky barrier interfaces (1986) 

 Application of time-resolved photoemission to the first measurement of picosecond 

electron dynamics on InP, GaAs, and Si surfaces (1985) 

 Invention and demonstration of picosecond time-resolved ultraviolet photoemission 

spectroscopy for the study of electron dynamics at semiconductor surfaces (1985) 

 Development of a source of 35.5 nm coherent radiation by seventh harmonic 

generation in a pulsed jet. At the time, this was the shortest wavelength source of 

coherent radiation yet demonstrated (1983) 

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Curriculum Vitae - Jeffrey Bokor 

Resume of Jeffrey Bokor, Ph.D. 5 

 Invention of the pulsed jet harmonic generator for the production of extreme 

ultraviolet coherent radiation (1983) 

 First picosecond pulse krypton-fluoride excimer laser (1982) 

 First demonstration of an autoionization pumped laser (1982) 

 First third harmonic generation using an excimer laser (1980) 

 Development of the first tunable, single-mode excimer laser system (1980) 

Technical Consulting 

From: 2001 Rodel, Inc. 

To: 2002 Newark, DE 

 Position: Technical advisory board member for extreme ultraviolet 

lithography 

From: 2002 Alpha Golf, Inc. 

To: 2002 Kensington, CA 

 Position: Technical consultant 

From: 2002 University Technology Ventures, Inc. 

To: present Pleasanton, CA 

 Position: Technical consultant 

From: 2002 Veeco Metrology Group 

To: 2006 Santa Barbara, CA 

 Position: Technical advisory board member 

Litigation Support 

Consulting and expert witness on patent validity and infringement in 30+ cases since 

1998. Equipment inspections. Testimonial experience at deposition and trial. Full list 

available on request. 

Patents 

1. Yang Yang, Jon Gorchon, Richard Wilson, Charles-Henri Lambert, Sayeef 

Salahuddin, Jeffrey Bokor, “Writing of a magnetic memory with electric pulses,” US 

10,388,349 B2, August 2019. 

2. Thomas Schenkel, Cheuk Chi LO, Christoph Weis, Stephen Lyon, Alexei Tyryshkin, 

Jeffrey Bokor, “Scalable quantum computer architecture with coupled donor-quantum 

dot qubits,” US 8,816,325 B2, August 2014 

3. Brian Lambson, Zheng Gu, David Carlton, Jeffrey Bokor, “Concave nanomagnets 

with widely tunable anisotropy,” US 8,766,754 B2, July 2014 

4. Ji Zhu, Jeff Grunes, Yang-Kyu Choi, Jeffrey Bokor, Gabor Somorjai, “Methods for 

Fabrication of Positional and Compositionally Controlled Nanostructures on 

Substrate,” US 8,486,287 B2, July 2013 

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5. Jeffrey Bokor, Nathan C. Emley, David Carlton, “Nanomagnetic signal propagation 

and logic gates,” US 8,134,441 B1, March, 2012 

6. David Carlton, Nathan C. Emley, Jeffrey Bokor, “Nanomagnetic Register,” US 

8,138,874 B1, March, 2012 

7. Jeffrey Bokor, Patrick Naulleau, “System For Interferometric Distortion 

Measurements That Define An Optical Path,” US 6,559,952 B1, May, 2003 

8. Jeffrey Bokor, Yun Lin, “Method And Apparatus For Inspecting Reflection Masks 

For Defects,” US 6,555,828 B1, April, 2003 

9. Jeffrey Bokor, Seongtae Jeong, “Multi-Level Scanning Method for Defect 

Inspection,” US 6,484,306 B1, November 2002 

10. Chenming Hu, Tsu-Jae King, Vivek Subramanian, Leland Chang, Xuejue Huang, 

Yang-Kyu Choi, Jakub Tadeusz Kedzierski, Nick Lindert, Jeffrey Bokor, Wen-Chin 

Lee, “FINFET Transistor Structures having a Double Gate Channel Extending 

Vertically From a Substrate and Methods of Manufacture,” US 6,413,802 B1, July 

2002 

11. Jeffrey Bokor, Anthony M. Johnson, “High Speed Photodetector Having Dual 

Transmission Line Geometry,” US 4,933,542 A, June 1990 

12. Jeffrey Bokor, Anthony M. Johnson, Ralph H. Storz, “High Speed Circuit 

Measurements Using Photoemission Sampling,” US 4,721,910 A, January, 1988 

Professional Associations, Service, and Awards 

 Fellow, Optical Society of America 

 Fellow, American Physical Society 

 Fellow, Institute of Electronics and Electrical Engineers 

 Senior Scientist, Lawrence Berkeley National Laboratory 

 American Association for the Advancement of Science 

 Paul R. Gray Distinguished Professorship in Electrical Engineering and Computer 

Sciences, 2015-present 

 National Semiconductor Distinguished Professorship in Engineering, University of 

California, 2007-2015 

 Deputy Director, Center for Energy Efficient Electronic Science, an NSF Science and 

Technology Center headquartered at Berkeley, 2010-present. 

 Co-Chair, 5th Berkeley Symposium on Energy Efficient Electronic Systems, 2017 

 Co-Chair, 4th Berkeley Symposium on Energy Efficient Electronic Systems, 2015 

 Co-Chair, 3rd Berkeley Symposium on Energy Efficient Electronic Systems, 2013 

 Co-Chair, 2nd Berkeley Symposium on Energy Efficient Electronic Systems, 2011 

 Co-Chair, 1st Berkeley Symposium on Energy Efficient Electronic Systems, 2009 

 Scientific Advisory Board, Catalan Institute for Nanoscience (ICN), Autonomous 

University of Barcelona, 2007-present 

 Scientific Advisory Committee, Advanced Light Source, Lawrence Berkeley National 

Laboratory, 2006-2010 

 IEEE Paul Rappaport Award for best paper of the year published in Electron Device 

Society journals, 2002 

 DARPA Most Significant Technical Accomplishment Award, 2000 

 Program Committee, CMOS devices, International Electron Devices Meeting, 1999-

2000 

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 Scientific Advisory Committee, Advanced Light Source, Lawrence Berkeley National 

Laboratory, 1998-2002 

 Technical Advisory Committee, Laser Science and Technology Program, Lawrence 

Livermore National Laboratory, 1996-1997 

 General Co-chair, Quantum Electronics and Laser Science Conference, Baltimore, 

MD, 1997 

 Program Committee, Topical Meeting on Extreme Ultraviolet Lithography, Boston, 

MA, 1996 

 Users Executive Committee, Advanced Light Source, Lawrence Berkeley National 

Laboratory, 1994-1998 

 Program Co-chair, Quantum Electronics and Laser Science Conference, Baltimore, 

MD, 1995 

 Technical Council, Optical Society of America, 1991-1994 

 Chairman, Technical Group on X-ray and XUV Physics, Optical Society of America, 

1991-1994 

 Program Committee, Topical Meeting on Soft X-ray Projection Lithography, 

Monterey, CA, April, 1992 

 Cochairman, Topical Meeting on Soft X-ray Projection Lithography, Monterey, CA, 

April, 1991 

 Cochairman, Topical Meeting on Short Wavelength Coherent Radiation, Generation 

and Applications, Monterey, CA, March, 1986 

 Program Committee, Conference on Lasers and Electro-Optics (CLEO) ‘84, 

Anaheim, CA, June, 1984 

 Program Committee, Topical Meeting on Laser Techniques in the Extreme 

Ultraviolet, Boulder, CO, March, 1984 

 Program Committee, Topical Meeting on Excimer Lasers, Lake Tahoe, NV, January, 

1983 

 Program Committee, Topical Meeting on Laser Techniques for Extreme Ultraviolet 

Spectroscopy, Boulder, CO, March 1982 

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Publications 

1. J. Hong, X. Li, O. Lee, W. Tian, S. Khizroev, J. Bokor, and L. You, 

"Demonstration of spin transfer torque (STT) magnetic recording," Appl. Phys. 

Lett., vol. 114, p. 243101, 2019. 

2. B. Navarrete, M. Stone, P. Wang, R. Guduru, K. Luongo, A. Hadjikhani, D. Toledo, 

Y. Emirov, B. Arkook, P. Liang, J. Hong, J. Bokor, and S. Khizroev, 

"Nanomagnetic Particle-Based Information Processing," IEEE Trans. Nanotechnol., 

vol. 18, pp. 983-988, 2019. 

3. G. Pitner, G. Hills, J. P. Llinas, K. M. Persson, R. Park, J. Bokor, S. Mitra, and H. 

P. Wong, "Low-Temperature Side Contact to Carbon Nanotube Transistors: 

Resistance Distributions Down to 10 nm Contact Length," Nano Lett, vol. 19, no. 2, 

pp. 1083-1089, Feb 13 2019. 

4. J. Hong, T. Yang, A. N’Diaye, J. Bokor, and L. You, "Effects of Interface Induced 

Natural Strains on Magnetic Properties of FeRh," Nanomaterials, vol. 9, no. 4, p. 

574, 2019. 

5. A. El-Ghazaly, B. Tran, A. Ceballos, C.-H. Lambert, A. Pattabi, S. Salahuddin, F. 

Hellman, and J. Bokor, "Ultrafast magnetization switching in nanoscale magnetic 

dots," Applied Physics Letters, vol. 114, no. 23, p. 232407, 2019. 

6. Z. Xiao, R. Lo Conte, C. Chen, C. Y. Liang, A. Sepulveda, J. Bokor, G. P. Carman, 

and R. N. Candler, "Bi-directional coupling in strain-mediated multiferroic 

heterostructures with magnetic domains and domain wall motion," Scientific 

Reports, vol. 8, p. 5207, Mar 26 2018. 

7. Z. Xiao, R. Khojah, M. Chooljian, R. L. Conte, J. D. Schneider, K. Fitzell, R. V. 

Chopdekar, Y. Wang, A. Scholl, J. Chang, G. P. Carman, J. Bokor, D. Di Carlo, and 

R. N. Candler, "Cytocompatible magnetostrictive microstructures for nano- and 

microparticle manipulation on linear strain response piezoelectrics," 

Multifunctional Materials, vol. 1, p. 014004, 2018. 

8. S. Smith, J. P. Llinás, J. Bokor, and S. Salahuddin, "Negative Differential 

Resistance and Steep Switching in Chevron Graphene Nanoribbon Field-Effect 

Transistors," IEEE Electron Device Letters, vol. 39, pp. 143-146, 2018. 

9. J. Hong, K. Dong, J. Bokor, and L. You, "Self-assembled single-digit nanometer 

memory cells," Applied Physics Letters, vol. 113, p. 062404, 2018. 

10. Z. Xiao, K. P. Mohanchandra, R. Lo Conte, C. Ty Karaba, J. D. Schneider, A. 

Chavez, S. Tiwari, H. Sohn, M. E. Nowakowski, A. Scholl, S. H. Tolbert, J. Bokor, 

G. P. Carman, and R. N. Candler, "Enhanced magnetoelectric coupling in a 

composite multiferroic system via interposing a thin film polymer," AIP Advances, 

vol. 8, 055907, 2018. 

11. R. Lo Conte, Z. Xiao, C. Chen, C. V. Stan, J. Gorchon, A. El-Ghazaly, M. E. 

Nowakowski, H. Sohn, A. Pattabi, A. Scholl, N. Tamura, A. Sepulveda, G. P. 

Carman, R. N. Candler, and J. Bokor, "Influence of Nonuniform Micron-Scale 

Strain Distributions on the Electrical Reorientation of Magnetic Microstructures in 

a Composite Multiferroic Heterostructure," Nano Lett, vol. 18, pp. 1952-1961, Mar 

14 2018. 

12. R. Lo Conte, J. Gorchon, A. Mougin, C. H. A. Lambert, A. El-Ghazaly, A. Scholl, 

S. Salahuddin, and J. Bokor, "Electrically controlled switching of the magnetization 

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state in multiferroic BaTiO3/CoFe submicrometer structures," Physical Review 

Materials, vol. 2, 2018. 

13. J. Hong, M. Stone, B. Navarrete, K. Luongo, Q. Zheng, Z. Yuan, K. Xia, N. Xu, J. 

Bokor, L. You, and S. Khizroev, "3D multilevel spin transfer torque devices," 

Applied Physics Letters, vol. 112, p. 112402, 2018. 

14. Y. Yang, R. B. Wilson, J. Gorchon, C.-H. Lambert, S. Salahuddin, and J. Bokor, 

"Ultrafast magnetization reversal by picosecond electrical pulses," Science 

Advances, vol. 3, p. E1603117, 2017. 

15. R. B. Wilson, J. Gorchon, Y. Yang, C.-H. Lambert, S. Salahuddin, and J. Bokor, 

"Ultrafast magnetic switching of GdFeCo with electronic heat currents," Physical 

Review B, vol. 95, 2017. 

16. R. B. Wilson, Y. Yang, J. Gorchon, C. H. Lambert, S. Salahuddin, and J. Bokor, 

"Electric current induced ultrafast demagnetization," Physical Review B, vol. 96, 

2017. 

17. H. Sohn, C.-y. Liang, M. E. Nowakowski, Y. Hwang, S. Han, J. Bokor, G. P. 

Carman, and R. N. Candler, "Deterministic multi-step rotation of magnetic singledomain state in Nickel nanodisks using multiferroic magnetoelastic coupling," J. 

Magn. Magn. Mater., vol. 439, pp. 196-202, 2017. 

18. J. P. Llinas, A. Fairbrother, G. Borin Barin, W. Shi, K. Lee, S. Wu, B. Yong Choi, 

R. Braganza, J. Lear, N. Kau, W. Choi, C. Chen, Z. Pedramrazi, T. Dumslaff, A. 

Narita, X. Feng, K. Mullen, F. Fischer, A. Zettl, P. Ruffieux, E. Yablonovitch, M. 

Crommie, R. Fasel, and J. Bokor, "Short-channel field-effect transistors with 9-

atom and 13-atom wide graphene nanoribbons," Nat Commun, vol. 8, p. 633, Sep 

21 2017. 

19. D. Chen, Z. Chen, Q. He, J. D. Clarkson, C. R. Serrao, A. K. Yadav, M. E. 

Nowakowski, Z. Fan, L. You, X. Gao, D. Zeng, L. Chen, A. Y. Borisevich, S. 

Salahuddin, J.-M. Liu, and J. Bokor, "Interface Engineering of Domain Structures 

in BiFeO3 Thin Films," Nano Letters, vol. 17, pp. 486-493, 2017/01/11 2017. 

20. J. Gorchon, Y. Yang, and J. Bokor, "Model for multishot all-thermal all-optical 

switching in ferromagnets," Physical Review B, vol. 94, p. 020409, 2016. 

21. J. Gorchon, R. B. Wilson, Y. Yang, A. Pattabi, J. Y. Chen, L. He, J. P. Wang, M. 

Li, and J. Bokor, "Role of electron and phonon temperatures in the helicityindependent all-optical switching of GdFeCo," Physical Review B, vol. 94, 2016. 

22. Y. Kang, J. Bokor, and V. Stojanovic, "Design Requirements for a Spintronic MTJ 

Logic Device for Pipelined Logic Applications," IEEE Transactions on Electron 

Devices, vol. 63, pp. 1754-1761, 2016. 

23. J. Hong, B. Lambson, S. Dhuey, and J. Bokor, "Experimental test of Landauer’s 

principle in single-bit operations on nanomagnetic memory bits," Science 

Advances, vol. 2, e1501492, 2016. 

24. J. Hong, A. Hadjikhani, M. Stone, P. Liang, F. Allen, V. Safonov, J. Bokor, and S. 

Khizroev, "The Physics of Spin-transfer Torque Switching in Magnetic Tunneling 

Junctions in Sub-10-nm Size Range," IEEE Transactions on Magnetics, vol. PP, pp. 

1-1, 2016. 

25. S. B. Desai, S. R. Madhvapathy, A. B. Sachid, J. P. Llinas, Q. Wang, G. H. Ahn, G. 

Pitner, M. J. Kim, J. Bokor, C. Hu, H.-S. P. Wong, and A. Javey, "MoS2 transistors 

with 1-nanometer gate lengths," Science, vol. 354, pp. 99-102, 2016. 

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26. L. You, O. Lee, D. Bhowmik, D. Labanowski, J. Hong, J. Bokor, and S. 

Salahuddin, "Switching of perpendicularly polarized nanomagnets with spin orbit 

torque without an external magnetic field by engineering a tilted anisotropy," 

Proceedings of the National Academy of Sciences, vol. 112, pp. 10310-10315, 

August 18, 2015 2015. 

27. D. Bhowmik, M. E. Nowakowski, L. You, O. Lee, D. Keating, M. Wong, J. Bokor, 

and S. Salahuddin, "Deterministic Domain Wall Motion Orthogonal To Current 

Flow Due To Spin Orbit Torque," Scientific reports, vol. 5, p. 11823, 2015. 

28. A. Pattabi, Z. Gu, J. Gorchon, Y. Yang, J. Finley, O. J. Lee, H. A. Raziq, S. 

Salahuddin, and J. Bokor, "Direct optical detection of current induced spin 

accumulation in metals by magnetization-induced second harmonic generation," 

Applied Physics Letters, vol. 107, p. 152404, 2015. 

29. Y. Lee, Z. Q. Liu, J. T. Heron, J. D. Clarkson, J. Hong, C. Ko, M. D. Biegalski, U. 

Aschauer, S. L. Hsu, M. E. Nowakowski, J. Wu, H. M. Christen, S. Salahuddin, J. 

B. Bokor, N. A. Spaldin, D. G. Schlom, and R. Ramesh, "Large resistivity 

modulation in mixed-phase metallic systems," Nat Commun, vol. 6, 01/07/online 

2015. 

30. M. M. Sabry Aly, M. Gao, G. Hills, C.-S. Lee, G. Pitner, M. M. Shulaker, T. F. Wu, 

M. Asheghi, J. Bokor, F. Franchetti, K. E. Goodson, C. Kozyrakis, I. Markov, K. 

Olukotun, L. Pileggi, E. Pop, J. Rabaey, C. Re, H. S. P. Wong, and S. Mitra, 

"Energy-Efficient Abundant-Data Computing: The N3XT 1,000x," Computer, vol. 

48, pp. 24-33, 2015. 

31. Z. Gu, R. Storz, M. Marcus, A. Doran, A. Young, A. Scholl, W. Chao, D. Carlton, 

B. Lambson, M. Nowakowski, and J. Bokor, "Time-Resolved Photo-Emission 

Electron Microscopy of Nanomagnetic Logic Chains," in Ultrafast Magnetism I. 

vol. 159, J. Y. Bigot, W. Hubner, T. Rasing, and R. Chantrell, Eds., Cham: 

Springer Int Publishing Ag, 2015, pp. 281-283. 

32. Z. Gu, M. E. Nowakowski, D. B. Carlton, R. Storz, M.-Y. Im, J. Hong, W. Chao, B. 

Lambson, P. Bennett, M. T. Alam, M. A. Marcus, A. Doran, A. Young, A. Scholl, 

P. Fischer, and J. Bokor, "Sub-nanosecond signal propagation in anisotropyengineered nanomagnetic logic chains," Nat Commun, vol. 6, 03/16/online 2015. 

33. S.-J. Choi, P. Bennett, D. Lee, and J. Bokor, "Highly uniform carbon nanotube 

nanomesh network transistors," Nano Research, vol. 8, pp. 1320-1326, 2015/04/01 

2015. 

34. H. Sohn, M. E. Nowakowski, C.-Y. Liang, J. L. Hockel, K. Wetzlar, S. Keller, B. 

M. McLellan, M. A. Marcus, A. Doran, A. Young, M. Kläui, G. P. Carman, J. 

Bokor, and R. N. Candler, "Electrically Driven Magnetic Domain Wall Rotation in 

Multiferroic Heterostructures to Manipulate Suspended On-Chip Magnetic 

Particles," ACS Nano, vol. 9, pp. 4814-4826, 2015. 

35. Y. Lee, Z. Q. Liu, J. T. Heron, J. D. Clarkson, J. Hong, C. Ko, M. D. Biegalski, U. 

Aschauer, S. L. Hsu, M. E. Nowakowski, J. Wu, H. M. Christen, S. Salahuddin, J. 

B. Bokor, N. A. Spaldin, D. G. Schlom, and R. Ramesh, "Large resistivity 

modulation in mixed-phase metallic systems," Nat Commun, vol. 6, 01/07/online 

2015. 

36. Z. Gu, R. Storz, M. Marcus, A. Doran, A. Young, A. Scholl, W. Chao, D. Carlton, 

B. Lambson, and M. Nowakowski, "Time-Resolved Photo-Emission Electron 

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Microscopy of Nanomagnetic Logic Chains," in Ultrafast Magnetism I: Springer, 

2015, pp. 281-283. 

37. Z. Gu, M. E. Nowakowski, D. B. Carlton, R. Storz, M.-Y. Im, J. Hong, W. Chao, B. 

Lambson, P. Bennett, M. T. Alam, M. A. Marcus, A. Doran, A. Young, A. Scholl, 

P. Fischer, and J. Bokor, "Sub-nanosecond signal propagation in anisotropyengineered nanomagnetic logic chains," Nat Commun, vol. 6, 03/16/online 2015. 

38. A. R. Schmidt, E. Henry, C. C. Lo, Y. T. Wang, H. Li, L. Greenman, O. Namaan, 

T. Schenkel, K. B. Whaley, J. Bokor, E. Yablonovitch, and I. Siddiqi, "A prototype 

silicon double quantum dot with dispersive microwave readout," Journal of Applied 

Physics, vol. 116, p. 044503, Jul 2014. 

39. C. C. Lo, S. Simmons, R. Lo Nardo, C. D. Weis, A. M. Tyryshkin, J. Meijer, D. 

Rogalla, S. A. Lyon, J. Bokor, T. Schenkel, and J. J. L. Morton, "Stark shift and 

field ionization of arsenic donors in Si-28-silicon-on-insulator structures," Applied 

Physics Letters, vol. 104, p. 193502, May 2014. 

40. D. Lee, M. L. Seol, D. I. Moon, P. Bennett, N. Yoder, J. Humes, J. Bokor, Y. K. 

Choi, and S. J. Choi, "High-performance thin-film transistors produced from highly 

separated solution-processed carbon nanotubes," Applied Physics Letters, vol. 104, 

p.143508, Apr 2014. 

41. T. Schenkel, C. C. Lo, C. D. Weis, J. Bokor, A. M. Tyryshkin, and S. A. Lyon, "A 

Spin Quantum Bit Architecture with Coupled Donors and Quantum Dots in 

Silicon," in Single-Atom Nanoelectronics, E. Prati and T. Shinada, Eds., 2013, pp. 

255-279. 

42. C. C. Lo, C. D. Weis, J. van Tol, J. Bokor, and T. Schenkel, "All-Electrical Nuclear 

Spin Polarization of Donors in Silicon," Physical Review Letters, vol. 110, p. 

57601, Jan 2013. 

43. B. Lambson, Z. Gu, M. Monroe, S. Dhuey, A. Scholl, and J. Bokor, "Concave 

nanomagnets: investigation of anisotropy properties and applications to 

nanomagnetic logic," Applied Physics a-Materials Science & Processing, vol. 111, 

pp. 413-421, May 2013. 

44. S. J. Choi, P. Bennett, K. Takei, C. Wang, C. C. Lo, A. Javey, and J. Bokor, "ShortChannel Transistors Constructed with Solution-Processed Carbon Nanotubes," ACS 

Nano, vol. 7, pp. 798-803, Jan 2013. 

45. P. B. Bennett, Z. Pedramrazi, A. Madani, Y.-C. Chen, D. G. de Oteyza, C. Chen, F. 

R. Fischer, M. F. Crommie, and J. Bokor, "Bottom-up graphene nanoribbon field 

effect transistors," Applied Physics Letters, vol. 103, 253114, 2013. 

46. W. Bao, M. Staffaroni, J. Bokor, M. B. Salmeron, E. Yablonovitch, S. Cabrini, A. 

Weber-Bargioni, and P. J. Schuck, "Plasmonic near-field probes: a comparison of 

the campanile geometry with other sharp tips," Optics Express, vol. 21, pp. 8166-

8176, Apr 2013. 

47. A. T. Zayak, H. Choo, Y. S. Hu, D. J. Gargas, S. Cabrini, J. Bokor, P. J. Schuck, 

and J. B. Neaton, "Harnessing Chemical Raman Enhancement for Understanding 

Organic Adsorbate Binding on Metal Surfaces," Journal of Physical Chemistry 

Letters, vol. 3, pp. 1357-1362, May 2012. 

48. W. Bao, M. Melli, N. Caselli, F. Riboli, D. S. Wiersma, M. Staffaroni, H. Choo, D. 

F. Ogletree, S. Aloni, J. Bokor, S. Cabrini, F. Intonti, M. B. Salmeron, E. 

Yablonovitch, P. J. Schuck, and A. Weber-Bargioni, "Mapping Local Charge 

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Recombination Heterogeneity by Multidimensional Nanospectroscopic Imaging," 

Science, vol. 338, pp. 1317-1321, Dec 2012. 

49. D. Carlton, B. Lambson, A. Scholl, A. Young, P. Ashby, S. Dhuey, and J. Bokor, 

"Investigation of Defects and Errors in Nanomagnetic Logic Circuits," IEEE 

Transactions on Nanotechnology, vol. 11, pp. 760-762, Jul 2012. 

50. S. J. Choi, C. Wang, C. C. Lo, P. Bennett, A. Javey, and J. Bokor, "Comparative 

study of solution-processed carbon nanotube network transistors," Applied Physics 

Letters, vol. 101, Sep 2012. 

51. H. Choo, M. K. Kim, M. Staffaroni, T. J. Seok, J. Bokor, S. Cabrini, P. J. Schuck, 

M. C. Wu, and E. Yablonovitch, "Nanofocusing in a metal-insulator-metal gap 

plasmon waveguide with a three-dimensional linear taper," Nature Photonics, vol. 

6, pp. 837-843, Dec 2012. 

52. M. Ilg, C. D. Weis, J. Schwartz, A. Persaud, Q. Ji, C. C. Lo, J. Bokor, A. Hegyi, E. 

Guliyev, I. W. Rangelow, and T. Schenkel, "Improved single ion implantation with 

scanning probe alignment," Journal of Vacuum Science & Technology B, vol. 30, 

Nov 2012. 

53. B. Lambson, Z. Gu, D. Carlton, S. Dhuey, A. Scholl, A. Doran, A. Young, and J. 

Bokor, "Cascade-like signal propagation in chains of concave nanomagnets," 

Applied Physics Letters, vol. 100, p. 152406, Apr 2012. 

54. C. C. Lo, F. R. Bradbury, A. M. Tyryshkin, C. D. Weis, J. Bokor, T. Schenkel, and 

S. A. Lyon, "Suppression of microwave rectification effects in electrically detected 

magnetic resonance measurements," Applied Physics Letters, vol. 100, p. 63510, 

Feb 2012. 

55. M. T. Martinez, Y. C. Tseng, M. Gonzalez, and J. Bokor, "Streptavidin as CNTs 

and DNA Linker for the Specific Electronic and Optical Detection of DNA 

Hybridization," Journal of Physical Chemistry C, vol. 116, pp. 22579-22586, Oct 

2012. 

56. C. D. Weis, C. C. Lo, V. Lang, A. M. Tyryshkin, R. E. George, K. M. Yu, J. Bokor, 

S. A. Lyon, J. J. L. Morton, and T. Schenkel, "Electrical activation and electron 

spin resonance measurements of implanted bismuth in isotopically enriched silicon28," Applied Physics Letters, vol. 100, p. 172104, Apr 2012. 

57. A. T. Zayak, Y. S. Hu, H. Choo, J. Bokor, S. Cabrini, P. J. Schuck, and J. B. 

Neaton, "Chemical Raman Enhancement of Organic Adsorbates on Metal 

Surfaces," Physical Review Letters, vol. 106, p. 083003, Feb 2011. 

58. J. W. J. Wu, D. Carlton, J. S. Park, Y. Meng, E. Arenholz, A. Doran, A. T. Young, 

A. Scholl, C. Hwang, H. W. Zhao, J. Bokor, and Z. Q. Qiu, "Direct observation of 

imprinted antiferromagnetic vortex states in CoO/Fe/Ag(001) discs," Nature 

Physics, vol. 7, pp. 303-306, Apr 2011. 

59. A. Weber-Bargioni, A. Schwartzberg, M. Cornaglia, A. Ismach, J. J. Urban, Y. J. 

Pang, R. Gordon, J. Bokor, M. B. Salmeron, D. F. Ogletree, P. Ashby, S. Cabrini, 

and P. J. Schuck, "Hyperspectral Nanoscale Imaging on Dielectric Substrates with 

Coaxial Optical Antenna Scan Probes," Nano Letters, vol. 11, pp. 1201-1207, Mar 

2011. 

60. Z. Liu, R. Brandt, Y. Yahagi, B. Hansen, B. Harteneck, J. Bokor, A. R. Hawkins, 

and H. Schmidt, "Detecting single nanomagnet dynamics beyond the diffraction 

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limit in varying magnetostatic environments," Applied Physics Letters, vol. 98, Jan 

2011. 

61. V. L. V. Lang, C. C. Lo, R. E. George, S. A. Lyon, J. Bokor, T. Schenkel, A. 

Ardavan, and J. J. L. Morton, "Electrically detected magnetic resonance in a Wband microwave cavity," Review of Scientific Instruments, vol. 82, p. 034704, Mar 

2011. 

62. B. Lambson, D. Carlton, and J. Bokor, "Exploring the Thermodynamic Limits of 

Computation in Integrated Systems: Magnetic Memory, Nanomagnetic Logic, and 

the Landauer Limit," Physical Review Letters, vol. 107, p. 010604, Jul 2011. 

63. J. Wu, D. Carlton, E. Oelker, J. S. Park, E. Jin, E. Arenholz, A. Scholl, H. 

Chanyong, J. Bokor, and Z. Q. Qiu, "Switching a magnetic vortex by interlayer 

coupling in epitaxially grown Co/Cu/Py/Cu(001) trilayer disks," J. Phys., Condens. 

Matter., vol. 22, pp. 342001 (4 pp.)-342001 (4 pp.), 1 September 2010. 

64. Y. C. Tseng and J. Bokor, "Characterization of the junction capacitance of metalsemiconductor carbon nanotube Schottky contacts," Applied Physics Letters, vol. 

96, p. 013103, Jan 2010. 

65. M. T. Martinez, Y. C. Tseng, J. P. Salvador, M. P. Marco, N. Ormategui, I. Loinaz, 

and J. Bokor, "Electronic Anabolic Steroid Recognition with Carbon Nanotube 

Field-Effect Transistors," Acs Nano, vol. 4, pp. 1473-1480, Mar 2010. 

66. X. Liang, Y.-S. Jung, S. Wu, A. Ismach, D. L. Olynick, S. Cabrini, and J. Bokor, 

"Formation of Bandgap and Subbands in Graphene Nanomeshes with Sub-10 nm 

Ribbon Width Fabricated via Nanoimprint Lithography," Nano Letters, vol. 10, pp. 

2454-2460, 2010. 

67. Ismach, C. Druzgalski, S. Penwell, A. Schwartzberg, M. Zheng, A. Javey, J. Bokor, 

and Y. G. Zhang, "Direct Chemical Vapor Deposition of Graphene on Dielectric 

Surfaces," Nano Letters, vol. 10, pp. 1542-1548, May 2010. 

68. Q. Ding, Z. T. Deng, H. Yan, S. Cabrini, R. N. Zuckermann, and J. Bokor, "Gold 

Nanoparticle Self-Similar Chain Structure Organized by DNA Origami," Journal of 

the American Chemical Society, vol. 132, pp. 3248-+, Mar 2010. 

69. D. Weis, A. Schuh, A. Batra, A. Persaud, I. W. Rangelow, J. Bokor, C. C. Lo, S. 

Cabrini, D. Olynick, S. Duhey, and T. Schenkel, "Mapping of ion beam induced 

current changes in FinFETs," Nuclear Instruments & Methods in Physics Research, 

Section B-Beam Interactions with Materials and Atoms, vol. 267, pp. 1222-1225, 

2009. 

70. T. Schenkel, C. C. Lo, C. D. Weis, A. Schuh, A. Persaud, and J. Bokor, "Critical 

issues in the formation of quantum computer test structures by ion implantation," 

Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions 

with Materials and Atoms, vol. 267, pp. 2563-2566, Aug 2009. 

71. M. T. Martinez, Y. C. Tseng, N. Ormategui, I. Loinaz, R. Eritja, and J. Bokor, 

"Label-Free DNA Biosensors Based on Functionalized Carbon Nanotube Field 

Effect Transistors," Nano Letters, vol. 9, pp. 530-536, Feb 2009. 

72. C. Lo, A. Persaud, S. Dhuey, D. Olynick, F. Borondics, M. C. Martin, H. A. 

Bechtel, J. Bokor, and T. Schenkel, "Device fabrication and transport measurements 

of FinFETs built with Si-28 SOI wafers toward donor qubits in silicon," 

Semiconductor Science and Technology, vol. 24, p. 105022, Oct 2009. 

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73. C. Garnett, Y. C. Tseng, D. R. Khanal, J. Q. Wu, J. Bokor, and P. D. Yang, "Dopant 

profiling and surface analysis of silicon nanowires using capacitance-voltage 

measurements," Nat. Nanotechnol., vol. 4, pp. 311-314, May 2009. 

74. C. Ford, J. C. Ho, Y. L. Chueh, Y. C. Tseng, Z. Y. Fan, J. Guo, J. Bokor, and A. 

Javey, "Diameter-Dependent Electron Mobility of InAs Nanowires," Nano Letters, 

vol. 9, pp. 360-365, Jan 2009. 

75. Ding, S. Cabrini, R. N. Zuckermann, and J. Bokor, "DNA directed assembly of 

nanoparticle linear structure for nanophotonics," Journal of Vacuum Science & 

Technology B: Microelectronics and Nanometer Structures, vol. 27, pp. 184-187, 

2009. 

76. R. de Sousa, C. C. Lo, and J. Bokor, "Spin-dependent scattering in a silicon 

transistor," Physical Review B, vol. 80, p. 9, Jul 2009. 

77. D. Weis, A. Schuh, A. Batra, A. Persaud, I. W. Rangelow, J. Bokor, C. C. Lo, S. 

Cabrini, E. Sideras-Haddad, G. D. Fuchs, R. Hanson, D. D. Awschalom, and T. 

Schenkel, "Single atom doping for quantum device development in diamond and 

silicon," J. Vac. Sci. Technol., vol. 26, pp. 2596-2600, 2008. 

78. B. Carlton, N. C. Emley, E. Tuchfeld, and J. Bokor, "Simulation Studies of 

Nanomagnet-Based Logic Architecture," Nano Letters, vol. 8, pp. 4173-4178, Dec 

2008. 

79. Y. Wang and J. Bokor, "Ultra-high-resolution monolithic thermal bubble inkjet 

print head," Journal of Micro/Nanolithography, MEMS and MOEMS, vol. 6, pp. 

043009-10, 2007. 

80. S. Wang, A. Barman, H. Schmidt, J. D. Maas, A. R. Hawkins, S. Kwon, B. 

Harteneck, S. Cabrini, and J. Bokor, "Optimization of nano-magneto-optic 

sensitivity using dual dielectric layer enhancement," Applied Physics Letters, vol. 

90, p. 252504, Jun 2007. 

81. San Paulo, E. Quevy, J. Black, R. T. Howe, R. White, and J. Bokor, "Mode shape 

imaging of out-of-plane and in-plane vibrating RF micromechanical resonators by 

atomic force microscopy," Microelectronic Engineering, vol. 84, pp. 1354-1357, 

May-Aug 2007. 

82. San Paulo, N. Arellano, J. A. Plaza, R. R. He, C. Carraro, R. Maboudian, R. T. 

Howe, J. Bokor, and P. D. Yang, "Suspended mechanical structures based on elastic 

silicon nanowire arrays," Nano Letters, vol. 7, pp. 1100-1104, Apr 2007. 

83. S. Paulo, J. P. Black, R. M. White, and J. Bokor, "Detection of nanomechanical 

vibrations by dynamic force microscopy in higher cantilever eigenmodes," Applied 

Physics Letters, vol. 91, p. 053116, Jul 2007. 

84. C. Lo, J. Bokor, T. Schenkel, A. M. Tyryshkin, and S. A. Lyon, "Spin-dependent 

scattering off neutral antimony donors in Si-28 field-effect transistors," Applied 

Physics Letters, vol. 91, p. 242106, Dec 2007. 

85. Batra, C. D. Weis, J. Reijonen, A. Persaud, T. Schenkel, S. Cabrini, C. C. Lo, and J. 

Bokor, "Detection of low energy single ion impacts in micron scale transistors at 

room temperature," Applied Physics Letters, vol. 91, p. 193502, 2007. 

86. Barman, S. Wang, J. Maas, A. R. Hawkins, S. Kwon, J. Bokor, A. Liddle, and H. 

Schmidt, "Size dependent damping in picosecond dynamics of single 

nanomagnets," Applied Physics Letters, vol. 90, pp. 202504-1-3, 2007. 

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87. M. Tyryshkin, S. A. Lyon, T. Schenkel, J. Bokor, J. Chu, W. Jantsch, F. Schaffler, 

J. L. Truitt, S. N. Coppersmith, and M. A. Eriksson, "Electron spin coherence in 

Si," Physica E-Low-Dimensional Systems & Nanostructures, vol. 35, pp. 257-263, 

Dec 2006. 

88. Y. C. Tseng, K. Phoa, D. Carlton, and J. Bokor, "Effect of diameter variation in a 

large set of carbon nanotube transistors," Nano Letters, vol. 6, pp. 1364-1368, Jul 

2006. 

89. T. Schenkel, J. A. Liddle, A. Persaud, A. M. Tyryshkin, S. A. Lyon, R. de Sousa, K. 

B. Whaley, J. Bokor, J. Shangkuan, and I. Chakarov, "Electrical activation and 

electron spin coherence of ultralow dose antimony implants in silicon," Applied 

Physics Letters, vol. 88, p. 112101, Mar 2006. 

90. T. Schenkel, J. A. Liddle, J. Bokor, A. Persaud, S. J. Park, J. Shangkuan, C. C. Lo, 

S. Kwon, S. A. Lyon, A. M. Tyryshkin, I. W. Rangelow, Y. Sarov, D. H. Schneider, 

J. Ager, and R. de Sousa, "Strategies for integration of donor electron spin qubits in 

silicon," Microelectronic Engineering, vol. 83, pp. 1814-1817, Apr-Sep 2006. 

91. M. Contreras, X. M. Yan, S. Kwon, J. Bokor, and G. A. Somorjai, "Catalytic CO 

oxidation reaction studies on lithographically fabricated platinum nanowire arrays 

with different oxide supports," Catalysis Letters, vol. 111, pp. 5-13, Oct 2006. 

92. R. Bradbury, A. M. Tyryshkin, G. Sabouret, J. Bokor, T. Schenkel, and S. A. Lyon, 

"Stark tuning of donor electron spins in silicon," Physical Review Letters, vol. 97, 

p. 176404, Oct 2006. 

93. Barman, S. Q. Wang, J. D. Maas, A. R. Hawkins, S. Kwon, A. Liddle, J. Bokor, and 

H. Schmidt, "Magneto-optical observation of picosecond dynamics of single 

nanomagnets," Nano Letters, vol. 6, pp. 2939-2944, Dec 2006. 

94. X. M. Yan, S. Kwon, A. M. Contreras, M. M. Koebel, J. Bokor, and G. A. 

Somorjai, "Fabrication of dense arrays of platinum nanowires on silica, alumina, 

zirconia and ceria surfaces as 2-D model catalysts," Catalysis Letters, vol. 105, pp. 

127-132, Dec 2005. 

95. X. M. Yan, S. Kwon, A. M. Contreras, J. Bokor, and G. A. Somorjai, "Fabrication 

of large number density platinum nanowire arrays by size reduction lithography and 

nanoimprint lithography," Nano Letters, vol. 5, pp. 745-748, Apr 2005. 

96. S. Y. Xiong, T. J. King, and J. Bokor, "Study of the extrinsic parasitics in nanoscale transistors," Semiconductor Science and Technology, vol. 20, pp. 652-657, Jun 

2005. 

97. S. Y. Xiong, T. J. King, and J. Bokor, "A comparison study of symmetric ultrathinbody double-gate devices with metal source/drain and doped source/drain," Ieee 

Transactions on Electron Devices, vol. 52, pp. 1859-1867, Aug 2005. 

98. S. Y. Xiong and J. Bokor, "Structural optimization of SUTBDG devices for lowpower applications," Ieee Transactions on Electron Devices, vol. 52, pp. 360-366, 

Mar 2005. 

99. M. D. Shumway, P. Naulleau, K. A. Goldberg, and J. R. Bokor, "Measuring line 

roughness through aerial image contrast variation using coherent extreme ultraviolet 

spatial filtering technique," Journal of Vacuum Science & Technology B, vol. 23, 

pp. 2844-2847, Nov-Dec 2005. 

100. San Paulo, J. Bokor, R. T. Howe, R. He, P. Yang, D. Gao, C. Carraro, and R. 

Maboudian, "Mechanical elasticity of single and double clamped silicon nanobeams 

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fabricated by the vapor-liquid-solid method," Applied Physics Letters, vol. 87, p. 

053111, Aug 2005. 

101. San Paulo and J. Bokor, "Scanning acoustic force microscopy characterization of 

thermal expansion effects on the electromechanical properties of film bulk acoustic 

resonators," Applied Physics Letters, vol. 86, p. 084102, Feb 2005. 

102. N. Qureshi, S. Q. Wang, M. A. Lowther, A. R. Hawkins, S. Kwon, A. Liddle, J. 

Bokor, and H. Schmidt, "Cavity-enhanced magnetooptical observation of 

magnetization reversal in individual single-domain nanomagnets," Nano Letters, 

vol. 5, pp. 1413-1417, Jul 2005. 

103. Persaud, S. J. Park, J. A. Liddle, T. Schenkel, J. Bokor, and I. W. Rangelow, 

"Integration of scanning probes and ion beams," Nano Letters, vol. 5, pp. 1087-

1091, Jun 2005. 

104. Persaud, J. A. Liddle, T. Schenkel, J. Bokor, T. Ivanov, and I. W. Rangelow, "Ion 

implantation with scanning probe alignment," Journal of Vacuum Science & 

Technology B, vol. 23, pp. 2798-2800, Nov-Dec 2005. 

105. J. Lin, P. Xuan, and J. Bokor, "Characterization of chemical vapor deposition 

growth yields of carbon nanotube transistors," Japanese Journal of Applied Physics 

Part 1-Regular Papers Brief Communications & Review Papers, vol. 44, pp. 6859-

6861, Sep 2005. 

106. S. Kwon, X. M. Yan, A. M. Contreras, J. A. Liddle, G. A. Somorjai, and J. Bokor, 

"Fabrication of metallic nanodots in large-area arrays by mold-to-mold cross 

imprinting (MTMCI)," Nano Letters, vol. 5, pp. 2557-2562, Dec 2005. 

107. Yagishita, T. J. King, and J. Bokor, "Schottky barrier height reduction and drive 

current improvement in metal source/drain MOSFET with strained-Si channel," 

Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review 

Papers, vol. 43, pp. 1713-1716, Apr 2004. 

108. S. Y. Xiong, J. Bokor, Q. Xiang, P. Fisher, I. Dudley, P. Rao, H. H. Wang, and B. 

En, "Is gate line edge roughness a first-order issue in affecting the performance of 

deep sub-micro bulk MOSFET devices?," Ieee Transactions on Semiconductor 

Manufacturing, vol. 17, pp. 357-361, Aug 2004. 

109. S. Y. Xiong and J. Bokor, "A simulation study of gate line edge roughness. Effects 

on doping profiles of short-channel MOSFET devices," Ieee Transactions on 

Electron Devices, vol. 51, pp. 228-232, Feb 2004. 

110. Wang, J. Bokor, and A. Lee, "Maskless lithography using drop-on-demand inkjet 

printing method," SPIE-Int. Soc. Opt. Eng. Proceedings of the SPIE, vol. 5374, pp. 

628-36, 2004. 

111. C. Tseng, P. Q. Xuan, A. Javey, R. Malloy, Q. Wang, J. Bokor, and H. J. Dai, 

"Monolithic integration of carbon nanotube devices with silicon MOS technology," 

Nano Letters, vol. 4, pp. 123-127, Jan 2004. 

112. M. D. Shumway, E. L. Snow, K. A. Goldberg, P. Naulleau, H. Cao, M. Chandhok, 

J. A. Liddle, E. H. Anderson, and J. Bokor, "EUV resist imaging below 50 nm 

using coherent spatial filtering techniques," Proceedings of the SPIE, vol. 5374, pp. 

454-9, 2004. 

113. T. Schenkel, I. W. Rangelow, R. Keller, S. J. Park, J. Nilsson, A. Persaud, V. R. 

Radmilovic, P. Grabiec, D. H. Schneider, J. A. Liddle, and J. Bokor, "Open 

questions in electronic sputtering of solids by slow highly charged ions with respect 

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to applications in single ion implantation," Nuclear Instruments & Methods in 

Physics Research Section B-Beam Interactions with Materials and Atoms, vol. 219-

20, pp. 200-205, Jun 2004. 

114. N. W. Pu, E. Y. Pan, and J. Bokor, "Sensitive detection of laser damage to Mo/Si 

multilayers by picosecond ultrasonics," Applied Physics B-Lasers and Optics, vol. 

79, pp. 107-112, Jul 2004. 

115. Persaud, F. I. Allen, F. Giccluel, S. J. Park, J. A. Liddle, T. Schenkel, T. Ivanov, K. 

Ivanova, I. W. Rangelow, and J. Bokor, "Single ion implantation with scanning 

probe alignment," Journal of Vacuum Science & Technology B, vol. 22, pp. 2992-

2994, Nov-Dec 2004. 

116. S. J. Park, A. Persaud, J. A. Liddle, J. Nilsson, J. Bokor, D. H. Schneider, I. W. 

Rangelow, and T. Schenkel, "Processing issues in top-down approaches to quantum 

computer development in silicon," Microelectronic Engineering, vol. 73-74, pp. 

695-700, Jun 2004. 

117. S. J. Park, J. A. Liddle, A. Persaud, F. I. Allen, T. Schenkel, and J. Bokor, 

"Formation of 15 nm scale Coulomb blockade structures in silicon by electron beam 

lithography with a bilayer resist process," Journal of Vacuum Science & 

Technology B, vol. 22, pp. 3115-3118, Nov-Dec 2004. 

118. H. T. Liu, J. K. O. Sin, P. Q. Xuan, and J. Bokor, "Characterization of the ultrathin 

vertical channel CMOS technology," Ieee Transactions on Electron Devices, vol. 

51, pp. 106-112, Jan 2004. 

119. Yang-Kyu, J. Grunes, L. Joon Sung, Z. Ji, G. A. Somorjai, L. P. Lee, and J. Bokor, 

"Sub-lithographic patterning technology for nanowire model catalysts and DNA 

label-free hybridization detection," Proceedings of the SPIE - The International 

Society for Optical Engineering, vol. 5220, pp. 10-19, 2003. 

120. P. Q. Xuan and J. Bokor, "Investigation of NiSi and TiSi as CMOS gate materials," 

Ieee Electron Device Letters, vol. 24, pp. 634-636, Oct 2003. 

121. S. Y. Xiong and J. Bokor, "Sensitivity of double-gate and FinFET devices to 

process variations," Ieee Transactions on Electron Devices, vol. 50, pp. 2255-2261, 

Nov 2003. 

122. M. D. Shumway, P. Naulleau, K. A. Goldberg, E. L. Snow, and J. Bokor, "Resist 

evaluation at 50 nm in the EUV using interferometric spatial-frequency-doubled 

imaging," Proceedings of the SPIE, vol. 5037, pp. 910-16, 2003. 

123. T. Schenkel, A. Persaud, S. J. Park, J. Nilsson, J. Bokor, J. A. Liddle, R. Keller, D. 

H. Schneider, D. W. Cheng, and D. E. Humphries, "Solid state quantum computer 

development in silicon with single ion implantation," Journal of Applied Physics, 

vol. 94, pp. 7017-7024, Dec 2003. 

124. N. W. Pu and J. Bokor, "Study of surface and bulk acoustic phonon excitations in 

superlattices using picosecond ultrasonics," Physical Review Letters, vol. 91, p. 

76101, Aug 2003. 

125. P. P. Naulleau, K. A. Goldberg, P. Batson, J. Bokor, P. Denham, and S. Rekawa, 

"Fourier-synthesis custom-coherence illuminator for extreme ultraviolet microfield 

lithography," Applied Optics, vol. 42, pp. 820-826, Feb 2003. 

126. P. P. Naulleau, K. A. Goldberg, E. H. Anderson, J. Bokor, B. D. Harteneck, K. H. 

Jackson, D. L. Olynick, F. Salmassi, S. L. Baker, P. B. Mirkarimi, E. A. Spiller, C. 

C. Walton, D. J. O'Connell, Y. Pei-Yang, and Z. Guojing, "Static EUV microCase 6:19-cv-00329-ADA Document 43-1 Filed 12/13/19 Page 30 of 46 Case 6:20-cv-00243-ADA Document 40-2 Filed 09/25/20 Page 31 of 47
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exposures using the ETS Set-2 optics," Proceedings of the SPIE, vol. 5037, pp. 36-

46, 2003. 

127. P. Naulleau, K. A. Goldberg, E. H. Anderson, J. Bokor, B. Harteneck, K. Jackson, 

D. Olynick, F. Salmassi, S. Baker, P. Mirkarimi, E. Spiller, C. Walton, D. 

O'Connell, P. Y. Yan, and G. J. Zhang, "Printing-based performance analysis of the 

engineering test stand set-2 optic using a synchrotron exposure station with variable 

sigma," Journal of Vacuum Science & Technology B, vol. 21, pp. 2697-2700, NovDec 2003. 

128. P. Naulleau, K. A. Goldberg, E. H. Anderson, J. Bokor, E. Gullikson, B. Harteneck, 

K. Jackson, D. Olynick, F. Salmassi, S. Baker, P. Mirkarimi, E. Spiller, C. Walton, 

and G. J. Zhang, "Lithographic characterization of the printability of programmed 

extreme ultraviolet substrate defects," Journal of Vacuum Science & Technology B, 

vol. 21, pp. 1286-1290, Jul-Aug 2003. 

129. J. S. Lee, D. W. Ha, Y. K. Choi, T. J. King, and J. Bokor, "Low-frequency noise 

characteristics of ultrathin body p-MOSFETs with molybdenum gate," Ieee 

Electron Device Letters, vol. 24, pp. 31-33, Jan 2003. 

130. J. S. Lee, Y. K. Choi, D. W. Ha, S. Balasubramanian, T. J. King, and J. Bokor, 

"Hydrogen annealing effect on DC and low-frequency noise characteristics in 

CMOS FinFETs," Ieee Electron Device Letters, vol. 24, pp. 186-188, Mar 2003. 

131. K. A. Goldberg, P. P. Naulleau, P. Denham, S. B. Rekawa, K. H. Jackson, E. H. 

Anderson, J. A. Liddle, and J. Bokor, "EUV interferometry of the 0.3-NA MET 

optic," Proceedings of the SPIE, vol. 5037, pp. 69-74, 2003. 

132. Y. K. Choi, J. Zhu, J. Grunes, J. Bokor, and G. A. Somorjai, "Fabrication of sub-10-

nm silicon nanowire arrays by size reduction lithography," Journal of Physical 

Chemistry B, vol. 107, pp. 3340-3343, Apr 2003. 

133. Y. K. Choi, J. S. Lee, J. Zhu, G. A. Somorjai, L. P. Lee, and J. Bokor, 

"Sublithographic nanofabrication technology for nanocatalysts and DNA chips," 

Journal of Vacuum Science & Technology B, vol. 21, pp. 2951-2955, Nov-Dec 

2003. 

134. Y. K. Choi, D. Ha, T. J. King, and J. Bokor, "Investigation of gate-induced drain 

leakage (GIDL) current in thin body devices: Single-gate ultra-thin body, 

symmetrical double-gate, and asymmetrical double-gate MOSFETs," Japanese 

Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 

vol. 42, pp. 2073-2076, Apr 2003. 

135. L. L. Chang, Y. K. Choi, J. Kedzierski, N. Lindert, P. Q. Xuan, J. Bokor, C. M. Hu, 

and T. J. King, "Moore's law lives on - Ultra-thin body SOI and FinFET CMOS 

transistors look to continue Moore's law for many years to come," Ieee Circuits & 

Devices, vol. 19, pp. 35-42, Jan 2003. 

136. L. L. Chang, Y. K. Choi, D. W. Ha, P. Ranade, S. Y. Xiong, J. Bokor, C. M. Hu, 

and T. J. King, "Extremely scaled silicon nano-CMOS devices," Proceedings of the 

Ieee, vol. 91, pp. 1860-1873, Nov 2003. 

137. M. Yi, T. Haga, C. Walton, C. Larson, and J. Bokor, ""Actinic-only" defects in 

extreme ultraviolet lithography mask blanks - Native defects at the detection limit 

of visible-light inspection tools," Japanese Journal of Applied Physics Part 1-

Regular Papers Short Notes & Review Papers, vol. 41, pp. 4101-4104, Jun 2002. 

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138. Y. C. Yeo, V. Subramanian, J. Kedzierski, P. Q. Xuan, T. J. King, J. Bokor, and C. 

M. Hu, "Design and fabrication of 50-nm thin-body p-MOSFETs with a SiGe 

heterostructure channel," Ieee Transactions on Electron Devices, vol. 49, pp. 279-

286, Feb 2002. 

139. X. Shiying, J. Bokor, X. Qi, P. Fisher, I. M. Dudley, and P. Rao, "Gate line edge 

roughness effects in 50 nm bulk MOSFET devices," Proceedings of the SPIE, vol. 

4689, pp. 733-41, 2002. 

140. T. Schenkel, A. Persaud, S. J. Park, J. Meijer, J. R. Kingsley, J. W. McDonald, J. P. 

Holder, J. Bokor, and D. H. Schneider, "Single ion implantation for solid state 

quantum computer development," Journal of Vacuum Science & Technology B, vol. 

20, pp. 2819-2823, Nov-Dec 2002. 

141. M. Park, M. Yi, P. Mirkarimi, C. Larson, and J. Bokor, "Characterization of 

extreme ultraviolet lithography mask defects by actinic inspection with broadband 

extreme ultraviolet illumination," Journal of Vacuum Science & Technology B, vol. 

20, pp. 3000-3005, Nov-Dec 2002. 

142. P. P. Naulleau, K. A. Goldberg, E. H. Anderson, D. T. Attwood, P. J. Batson, J. 

Bokor, P. Denham, E. M. Gullikson, B. D. Harteneck, B. Hoef, K. H. Jackson, D. L. 

Olynick, S. Rekawa, F. Salmassi, K. L. Blaedel, H. N. Chapman, L. C. Hale, R. 

Soufli, E. A. Spiller, D. W. Sweeney, J. R. Taylor, C. C. Walton, A. RayChaudhuri, D. O'Connell, R. Stulen, D. Tichenor, C. W. Gwyn, Y. Pei-Yang, and Z. 

Guojing, "Static microfield printing at the Advanced Light Source with the ETS 

Set-2 optic," Proceedings of the SPIE, vol. 4688, pp. 64-71, 2002. 

143. P. Naulleau, K. A. Goldberg, E. H. Anderson, D. Attwood, P. Batson, J. Bokor, P. 

Denham, E. Gullikson, B. Harteneck, B. Hoef, K. Jackson, D. Olynick, S. Rekawa, 

F. Salmassi, K. Blaedel, H. Chapman, L. Hale, P. Mirkarimi, R. Soufli, E. Spiller, 

D. Sweeney, J. Taylor, C. Walton, D. O'Connell, D. Tichenor, C. W. Gwyn, P. Y. 

Yan, and G. J. Zhang, "Sub-70 nm extreme ultraviolet lithography at the Advanced 

Light Source static microfield exposure station using the engineering test stand set2 optic," Journal of Vacuum Science & Technology B, vol. 20, pp. 2829-2833, NovDec 2002. 

144. Y. Moonsuk, P. Mincheol, P. B. Mirkarimi, C. C. Larson, and J. Bokor, "Atwavelength inspection of defect smoothing in EUVL masks," Proceedings of the 

SPIE, vol. 4688, pp. 395-400, 2002. 

145. J. S. Lee, Y. K. Choi, D. Ha, T. J. King, and J. Bokor, "Low-frequency noise 

characteristics in p-channel FinFETs," Ieee Electron Device Letters, vol. 23, pp. 

722-724, Dec 2002. 

146. K. A. Goldberg, P. Naulleau, J. Bokor, H. N. Chapman, and A. Barty, "Testing 

extreme ultraviolet optics with visible-light and extreme ultraviolet interferometry," 

Journal of Vacuum Science & Technology B, vol. 20, pp. 2834-2839, Nov-Dec 

2002. 

147. K. A. Goldberg, P. Naulleau, J. Bokor, and H. N. Chapman, "Honing the accuracy 

of extreme-ultraviolet optical system testing: at-wavelength and visible-light 

measurements of the ETS Set-2 projection optic," Proceedings of the SPIE, vol. 

4688, pp. 329-37, 2002. 

148. K. A. Goldberg, P. Naulleau, and J. Bokor, "Fourier transform interferometer 

alignment method," Applied Optics, vol. 41, pp. 4477-4483, Aug 2002. 

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149. M. S. Yi, T. Haga, C. Walton, and J. Bokor, "High sensitivity actinic detection of 

native defects on extreme ultraviolet lithography mask blanks," Journal of Vacuum 

Science & Technology B, vol. 19, pp. 2401-2405, Nov-Dec 2001. 

150. M. D. Shumway, L. Sang Hun, C. Chang Hyun, P. Naulleau, K. A. Goldberg, and J. 

Bokor, "Extremely fine-pitch printing with a 10× Schwarzschild optic at 

extreme ultraviolet wavelengths," Proceedings of the SPIE, vol. 4343, pp. 357-62, 

2001. 

151. P. P. Naulleau, E. H. Anderson, E. M. Gullikson, and J. Bokor, "Fabrication of 

high-efficiency multilayer-coated binary blazed gratings in the EUV regime," 

Optics Communications, vol. 200, pp. 27-34, Dec 2001. 

152. P. Naulleau, K. A. Goldberg, E. H. Anderson, P. Batson, P. E. Denham, K. H. 

Jackson, E. M. Gullikson, S. Rekawa, and J. Bokor, "At-wavelength 

characterization of the extreme ultraviolet Engineering Test Stand Set-2 optic," 

Journal of Vacuum Science & Technology B, vol. 19, pp. 2396-2400, Nov-Dec 

2001. 

153. N. Lindert, L. L. Chang, Y. K. Choi, E. H. Anderson, W. C. Lee, T. J. King, J. 

Bokor, and C. M. Hu, "Sub-60-nm quasi-planar FinFETs fabricated using a 

simplified process," Ieee Electron Device Letters, vol. 22, pp. 487-489, Oct 2001. 

154. S. H. Lee, P. Naulleau, K. A. Goldberg, C. H. Cho, S. Jeong, and J. Bokor, 

"Extreme-ultraviolet lensless Fourier-transform holography," Applied Optics, vol. 

40, pp. 2655-2661, Jun 2001. 

155. X. J. Huang, W. C. Lee, C. Kuo, D. Hisamoto, L. L. Chang, J. Kedzierski, E. 

Anderson, H. Takeuchi, Y. K. Choi, K. Asano, V. Subramanian, T. J. King, J. 

Bokor, and C. M. Hu, "Sub-50 nm p-channel FinFET," Ieee Transactions on 

Electron Devices, vol. 48, pp. 880-886, May 2001. 

156. K. A. Goldberg and J. Bokor, "Fourier-transform method of phase-shift 

determination," Applied Optics, vol. 40, pp. 2886-2894, Jun 2001. 

157. H. N. Chapman, A. K. Ray-Chaudhuri, D. A. Tichenor, W. C. Replogle, R. H. 

Stulen, G. D. Kubiak, P. D. Rockett, L. E. Klebanoff, D. O'Connell, A. H. Leung, 

K. L. Jefferson, J. B. Wronosky, J. S. Taylor, L. C. Hale, K. Blaedel, E. A. Spiller, 

G. E. Sommargren, J. A. Folta, D. W. Sweeney, E. M. Gullikson, P. Naulleau, K. A. 

Goldberg, J. Bokor, D. T. Attwood, U. Mickan, R. Hanzen, E. Panning, P. Y. Yan, 

C. W. Gwyn, and S. H. Lee, "First lithographic results from the extreme ultraviolet 

Engineering Test Stand," Journal of Vacuum Science & Technology B, vol. 19, pp. 

2389-2395, Nov-Dec 2001. 

158. M. Yi, S. Jeong, S. Rekawa, and J. Bokor, "Characterization of extreme ultraviolet 

lithography mask defects from extreme ultraviolet far-field scattering patterns," 

Journal of Vacuum Science & Technology B, vol. 18, pp. 2930-2934, Nov-Dec 

2000. 

159. Y. C. Yeo, V. Subramanian, J. Kedzierski, T. J. King, J. Bokor, C. M. Hu, and P. Q. 

Xuan, "Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si 

heterostructure channel," Ieee Electron Device Letters, vol. 21, pp. 161-163, Apr 

2000. 

160. J. Seongtae, L. Chih-Wei, S. Rekawa, C. C. Walton, and J. Bokor, "Actinic defect 

counting statistics over 1 cm<sup>2</sup> area of EUVL mask blank," 

Proceedings of the SPIE, vol. 3997, pp. 431-40, 2000. 

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161. L. Sang Hun, F. Piao, P. Naulleau, K. A. Goldberg, W. Oldham, and J. Bokor, "Atwavelength characterization of DUV-radiation-induced damage in fused silica," 

Proceedings of the SPIE, vol. 3998, pp. 724-31, 2000. 

162. L. Sang Hun, P. Naulleau, K. A. Goldberg, C. Chang Hyun, and J. Bokor, "EUV 

holographic aerial image recording," Proceedings of the SPIE, vol. 3997, pp. 823-

8., 2000. 

163. P. P. Naulleau, C. H. Cho, E. M. Gullikson, and J. Bokor, "Transmission phase 

gratings for EUV interferometry," Journal of Synchrotron Radiation, vol. 7, pp. 

405-410, Nov 2000. 

164. P. Naulleau, K. A. Goldberg, E. M. Gullikson, and J. Bokor, "At-wavelength, 

system-level flare characterization of extreme-ultraviolet optical systems," Applied 

Optics, vol. 39, pp. 2941-2947, Jun 2000. 

165. P. P. Naulieau, K. A. Goldberg, and J. Bokor, "Extreme ultraviolet carrierfrequency shearing interferometry of a lithographic four-mirror optical system," 

Journal of Vacuum Science & Technology B, vol. 18, pp. 2939-2943, Nov-Dec 

2000. 

166. S. H. Lee, J. Bokor, P. Naulleau, S. T. Jeong, and K. A. Goldberg, "Extreme 

ultraviolet holographic microscopy and its application to extreme ultraviolet maskblank defect characterization," Journal of Vacuum Science & Technology B, vol. 

18, pp. 2935-2938, Nov-Dec 2000. 

167. J. Kedzierski, P. Q. Xuan, V. Subramanian, J. Bokor, T. J. King, C. M. Hu, and E. 

Anderson, "A 20 nm gate-length ultra-thin body p-MOSFET with silicide 

source/drain," Superlattices and Microstructures, vol. 28, pp. 445-452, Nov-Dec 

2000. 

168. J. Kedzierski, X. Peiqi, V. Subramanian, J. Bokor, K. Tsu-Jae, H. Chenming, and E. 

Anderson, "A 20 nm gate-length ultra-thin body p-MOSFET with silicide 

source/drain," Superlattices and Microstructures, vol. 28, pp. 445-52, 2000. 

169. J. Kedzierski, E. Anderson, and J. Bokor, "Calixarene G-line double resist process 

with 15 nm resolution aid large area exposure capability," Journal of Vacuum 

Science & Technology B, vol. 18, pp. 3428-3430, Nov-Dec 2000. 

170. Hisamoto, W. C. Lee, J. Kedzierski, H. Takeuchi, K. Asano, C. Kuo, E. Anderson, 

T. J. King, J. Bokor, and C. M. Hu, "FinFET - A self-aligned double-gate MOSFET 

scalable to 20 nm," Ieee Transactions on Electron Devices, vol. 47, pp. 2320-2325, 

Dec 2000. 

171. K. A. Goldberg, P. Naulleau, P. Batson, P. Denham, E. H. Anderson, H. Chapman, 

and J. Bokor, "Extreme ultraviolet alignment and testing of a four-mirror ring field 

extreme ultraviolet optical system," Journal of Vacuum Science & Technology B, 

vol. 18, pp. 2911-2915, Nov-Dec 2000. 

172. K. A. Golberg, P. Naulleau, P. J. Batson, P. Denham, E. H. Anderson, J. Bokor, and 

H. N. Chapman, "EUV interferometry of a four-mirror ring field," Proceedings of 

the SPIE, vol. 3997, pp. 867-73, 2000. 

173. Y. K. Choi, K. Asano, N. Lindert, V. Subramanian, T. J. King, J. Bokor, and C. M. 

Hu, "Ultrathin-body SOI MOSFET for deep-sub-tenth micron era," Ieee Electron 

Device Letters, vol. 21, pp. 254-255, May 2000. 

174. N. W. Pu, J. Bokor, S. T. Jeong, and R. A. Zhao, "Nondestructive picosecondultrasonic characterization of Mo/Si extreme ultraviolet multilayer reflection 

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coatings," Journal of Vacuum Science & Technology B, vol. 17, pp. 3014-3018, 

Nov-Dec 1999. 

175. N. W. Pu, J. Bokor, S. Jeong, and R. A. Zhao, "Picosecond ultrasonic study of 

Mo/Si multilayer structures using an alternating-pump technique," Applied Physics 

Letters, vol. 74, pp. 320-322, Jan 1999. 

176. P. Nen-Wen, J. Seongtae, Z. Ri-An, and J. Bokor, "Picosecond ultrasonic 

characterization of Mo/Si multilayers for extreme ultraviolet lithography," 

Proceedings of the SPIE, vol. 3676, pp. 627-34, 1999. 

177. P. Nen-Wen, J. Seongtae, Z. Ri-An, and J. Bokor, "Nondestructive picosecond 

ultrasonic characterization of Mo/Si multilayers using a novel pump-probe 

scheme," Proceedings of the SPIE, vol. 3749, pp. 196-7, 1999. 

178. P. P. Naulleau, K. A. Goldberg, S. H. Lee, C. Chang, D. Attwood, and J. Bokor, 

"Extreme-ultraviolet phase-shifting point-diffraction interferometer: a wave-front 

metrology tool with subangstrom reference-wave accuracy," Applied Optics, vol. 

38, pp. 7252-7263, Dec 1999. 

179. P. Naulleau, K. A. Goldberg, S. H. Lee, C. Chang, P. Batson, D. Attwood, and J. 

Bokor, "Recent advances in EUV phase-shifting point diffraction interferometry," 

Proceedings of the SPIE, vol. 3767, pp. 154-63, 1999. 

180. P. Naulleau, K. A. Goldberg, E. M. Gullikson, and J. Bokor, "Interferometric atwavelength flare characterization of extreme ultraviolet optical systems," Journal of 

Vacuum Science & Technology B, vol. 17, pp. 2987-2991, Nov-Dec 1999. 

181. J. Kedzierski, J. Bokor, and E. Anderson, "Novel method for silicon quantum wire 

transistor fabrication," Journal of Vacuum Science & Technology B, vol. 17, pp. 

3244-3247, Nov-Dec 1999. 

182. S. T. Jeong, L. Johnson, S. Rekawa, C. C. Walton, S. T. Prisbrey, E. Tejnil, J. H. 

Underwood, and J. Bokor, "Actinic detection of sub-100 nm defects on extreme 

ultraviolet lithography mask blanks," Journal of Vacuum Science & Technology B, 

vol. 17, pp. 3009-3013, Nov-Dec 1999. 

183. S. Jeong, C. W. Lai, S. Rekawa, C. C. Walton, S. T. Prisbrey, and J. Bokor, "Cross 

correlation between actinic and visible defect inspection tool for extreme ultraviolet 

lithography," Proceedings of the SPIE, vol. 3873, pp. 814-21, 1999. 

184. S. Jeong, L. Johnson, L. Yun, S. Rekawa, Y. Pei-Yang, P. A. Kearney, E. Tejnil, J. 

H. Underwood, and J. Bokor, "Actinic EUVL mask blank defect inspection 

system," Proceedings of the SPIE, vol. 3676, pp. 298-308, 1999. 

185. S. Jeong and J. Bokor, "Ultrafast carrier dynamics near the Si(100)2x1 surface," 

Physical Review B, vol. 59, pp. 4943-4951, Feb 1999. 

186. M. Gullikson, S. Baker, J. E. Bjorkholm, J. Bokor, K. A. Goldberg, J. E. M. 

Goldsmith, C. Montcalm, P. Naulleau, E. Spiller, D. G. Stearns, J. S. Taylor, and J. 

H. Underwood, "EUV scattering and flare of 10x projection cameras," Proceedings 

of the SPIE, vol. 3676, pp. 717-23, 1999. 

187. K. A. Goldberg, P. Naulleau, L. SangHun, C. Chang, C. Bresloff, R. Gaughan, H. 

N. Chapman, J. Goldsmith, and J. Bokor, "Direct comparison of EUV and visiblelight interferometries," Proceedings of the SPIE, vol. 3676, pp. 635-42, 1999. 

188. K. A. Goldberg, P. Naulleau, and J. Bokor, "Extreme ultraviolet interferometric 

measurements of diffraction-limited optics," Journal of Vacuum Science & 

Technology B, vol. 17, pp. 2982-2986, Nov-Dec 1999. 

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189. T. Attwood, P. Naulleau, K. A. Goldberg, E. Tejnil, C. Chang, R. Beguiristain, P. 

Batson, J. Bokor, E. M. Gullikson, M. Koike, H. Medecki, and J. H. Underwood, 

"Tunable coherent radiation in the soft X-ray and extreme ultraviolet spectral 

regions," Ieee Journal of Quantum Electronics, vol. 35, pp. 709-720, May 1999. 

190. Tejnil, K. A. Goldberg, and J. Bokor, "Phase effects owing to multilayer coatings in 

a two-mirror extreme-ultraviolet Schwarzschild objective," Applied Optics, vol. 37, 

pp. 8021-8029, Dec 1998. 

191. J. Seongtae, M. Idir, L. Johnson, L. Yun, P. Batson, R. Levesque, P. Kearney, Y. 

Pei-Yang, E. Gullikson, J. H. Underwood, and J. Bokor, "Actinic detection of 

EUVL mask blank defects," Proceedings of the SPIE, vol. 3546, pp. 524-30, 1998. 

192. S. T. Jeong, M. Idir, Y. Lin, L. Johnson, S. Rekawa, M. Jones, P. Denham, P. 

Batson, R. Levesque, P. Kearney, P. Y. Yan, E. Gullikson, J. H. Underwood, and J. 

Bokor, "At-wavelength detection of extreme ultraviolet lithography mask blank 

defects," Journal of Vacuum Science & Technology B, vol. 16, pp. 3430-3434, NovDec 1998. 

193. K. A. Goldberg, P. Naulleau, S. Lee, C. Bresloff, C. Henderson, D. Attwood, and J. 

Bokor, "High-accuracy interferometry of extreme ultraviolet lithographic optical 

systems," Journal of Vacuum Science & Technology B, vol. 16, pp. 3435-3439, 

Nov-Dec 1998. 

194. Budiarto, N. W. Pu, S. Jeong, and J. Bokor, "Near-field propagation of terahertz 

pulses from a large-aperture antenna," Optics Letters, vol. 23, pp. 213-215, Feb 

1998. 

195. Tejnil, K. A. Goldberg, S. H. Lee, H. Medecki, P. J. Batson, P. E. Denham, A. A. 

MacDowell, J. Bokor, and D. Attwood, "At-wavelength interferometry for extreme 

ultraviolet lithography," Journal of Vacuum Science & Technology B, vol. 15, pp. 

2455-2461, Nov-Dec 1997. 

196. Sinitsky, R. Tu, C. L. Liang, M. S. Chan, J. Bokor, and C. M. Hu, "AC output 

conductance of SOI MOSFET's and impact on analog applications," Ieee Electron 

Device Letters, vol. 18, pp. 36-38, Feb 1997. 

197. Sinitsky, F. Assaderaghi, M. Orshansky, J. Bokor, and C. Hu, "Velocity overshoot 

of electrons and holes in Si inversion layers," Solid-State Electronics, vol. 41, pp. 

1119-1125, Aug 1997. 

198. Sinitsky, F. Assaderaghi, C. M. Hu, and J. Bokor, "High field hole velocity and 

velocity overshoot in silicon inversion layers," Ieee Electron Device Letters, vol. 

18, pp. 54-56, Feb 1997. 

199. J. Orenstein, J. Bokor, E. Budiarto, J. Corson, R. Mallozzi, I. Bozovic, and J. N. 

Eckstein, "Nonlinear electrodynamics in cuprate superconductors," Physica C, vol. 

282, pp. 252-255, Aug 1997. 

200. Y. Lin and J. Bokor, "Minimum critical defects in extreme-ultraviolet lithography 

masks," Journal of Vacuum Science & Technology B, vol. 15, pp. 2467-2470, NovDec 1997. 

201. J. Kedzierski, J. Bokor, and C. Kisielowski, "Fabrication of planar silicon 

nanowires on silicon-on-insulator using stress limited oxidation," Journal of 

Vacuum Science & Technology B, vol. 15, pp. 2825-2828, Nov-Dec 1997. 

202. K. A. Goldberg, E. Tejnil, L. Sang Hun, H. Medecki, D. T. Attwood, K. H. Jackson, 

and J. Bokor, "Characterization of an EUV Schwarzschild objective using phaseCase 6:19-cv-00329-ADA Document 43-1 Filed 12/13/19 Page 36 of 46 Case 6:20-cv-00243-ADA Document 40-2 Filed 09/25/20 Page 37 of 47
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shifting point diffraction interferometry," Proceedings of the SPIE, vol. 3048, pp. 

264-70, 1997. 

203. Assaderaghi, D. Sinitsky, S. A. Parke, J. Bokor, P. K. Ko, and C. M. Hu, "Dynamic 

threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI," Ieee 

Transactions on Electron Devices, vol. 44, pp. 414-422, Mar 1997. 

204. Assaderaghi, D. Sinitsky, J. Bokor, P. K. Ko, H. Gaw, and C. M. Hu, "High-field 

transport of inversion-layer electrons and holes including velocity overshoot," Ieee 

Transactions on Electron Devices, vol. 44, pp. 664-671, Apr 1997. 

205. N. C. Tien, S. Jeong, L. M. Phinney, K. Fushinobu, and J. Bokor, "Surface adhesion 

reduction in silicon microstructures using femtosecond laser pulses," Applied 

Physics Letters, vol. 68, pp. 197-199, Jan 1996. 

206. J. H. Son, S. T. Jeong, and J. Bokor, "Noncontact probing of metal-oxidesemiconductor inversion layer mobility," Applied Physics Letters, vol. 69, pp. 1779-

1780, Sep 1996. 

207. K. B. Nguyen, G. F. Cardinale, D. A. Tichenor, G. D. Kubiak, K. Berger, A. K. 

RayChaudhuri, Y. Perras, S. J. Haney, R. Nissen, K. Krenz, R. H. Stulen, H. 

Fujioka, C. Hu, J. Bokor, D. M. Tennant, and L. A. Fetter, "Fabrication of metaloxide-semiconductor devices with extreme ultraviolet lithography," Journal of 

Vacuum Science & Technology B, vol. 14, pp. 4188-4192, Nov-Dec 1996. 

208. Medecki, E. Tejnil, K. A. Goldberg, and J. Bokor, "Phase-shifting point diffraction 

interferometer," Optics Letters, vol. 21, pp. 1526-1528, Oct 1996. 

209. S. Jeong, H. Zacharias, and J. Bokor, "Ultrafast carrier dynamics on the Si(100)2x1 

surface," Physical Review B, vol. 54, pp. 17300-17303, Dec 1996. 

210. E. Budiarto, J. Margolies, S. Jeong, J. Son, and J. Bokor, "High-intensity terahertz 

pulses at 1-kHz repetition rate," Ieee Journal of Quantum Electronics, vol. 32, pp. 

1839-1846, Oct 1996. 

211. Bokor, A. R. Neureuther, and W. G. Oldham, "Advanced lithography for ULSI," 

Ieee Circuits and Devices Magazine, vol. 12, pp. 11-15, Jan 1996. 

212. R. Beguiristain, K. A. Goldberg, E. Tejnil, J. Bokor, H. Medecki, D. T. Attwood, 

and K. Jackson, "Interferometry using undulator sources," Review of Scientific 

Instruments, vol. 67, p. 1, 1996. 

213. A. Goldberg, R. Beguiristain, J. Bokor, H. Medecki, K. Jackson, D. T. Attwood, G. 

E. Sommargren, J. P. Spallas, and R. Hostetler, "At-wavelength testing of optics for 

EUV," Proceedings of the SPIE, vol. 2437, pp. 347-54, 1995. 

214. A. Goldberg, R. Beguiristain, J. Bokor, H. Medecki, D. T. Attwood, K. Jackson, E. 

Tejnil, and G. E. Sommargren, "Progress towards lambda/20 extreme ultraviolet 

interferometry," Journal of Vacuum Science & Technology B, vol. 13, pp. 2923-

2927, Nov-Dec 1995. 

215. G. Park, C. A. King, D. J. Eaglesham, T. W. Sorsch, B. Weir, H. S. Luftman, J. 

Bokor, and Y. O. Kim, "Ultrashallow p<sup>+</sup>-n junctions formed by 

diffusion from an RTCVD-deposited B:Ge layer," Proceedings of the SPIE, vol. 

2091, pp. 122-31, 1994. 

216. Assaderaghi, S. Parke, D. Sinitsky, J. Bokor, P. K. Ko, and C. M. Hu, "A Dynamic 

Threshold Voltage Mosfet (Dtmos) for Very-Low Voltage Operation," Ieee 

Electron Device Letters, vol. 15, pp. 510-512, Dec 1994. 

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217. A. Tichenor, G. D. Kubiak, M. E. Malinowski, R. H. Stulen, S. J. Haney, K. W. 

Berger, L. A. Brown, W. C. Sweatt, J. E. Bjorkholm, R. R. Freeman, M. D. Himel, 

A. A. Macdowell, D. M. Tennant, O. R. Wood, J. Bokor, T. E. Jewell, W. M. 

Mansfield, W. K. Waskiewicz, D. L. White, and D. L. Windt, "Soft-X-Ray 

Projection Lithography Experiments Using Schwarzschild Imaging Optics," 

Applied Optics, vol. 32, pp. 7068-7071, Dec 1993. 

218. H. Sher, U. Mohideen, H. W. K. Tom, O. R. Wood, II, G. D. Aumiller, T. J. 

McIlrath, J. Bokor, R. R. Freeman, and J. Sugar, "Soft X-ray pulse length 

measurement by pump-probe absorption spectroscopy," Proceedings of the SPIE, 

vol. vol.1860, pp. 112-22, 1993. 

219. M. Murnane, H. C. Kapteyn, S. P. Gordon, J. Bokor, E. N. Glytsis, and R. W. 

Falcone, "Efficient Coupling of High-Intensity Subpicosecond Laser-Pulses into 

Solids," Applied Physics Letters, vol. 62, pp. 1068-1070, Mar 1993. 

220. U. Mohideen, M. H. Sher, H. W. K. Tom, G. D. Aumiller, O. R. Wood, R. R. 

Freeman, J. Bokor, and P. H. Bucksbaum, "High-Intensity above-Threshold 

Ionization of He," Physical Review Letters, vol. 71, pp. 509-512, Jul 1993. 

221. A. Macdowell, J. E. Bjorkholm, K. Early, R. R. Freeman, M. D. Himel, P. P. 

Mulgrew, L. H. Szeto, D. W. Taylor, D. M. Tennant, O. R. Wood, J. Bokor, L. 

Eichner, T. E. Jewell, W. K. Waskiewicz, D. L. White, D. L. Windt, R. M. Dsouza, 

W. T. Silfvast, and F. Zernike, "Soft-X-Ray Projection Imaging with a 1/1 RingField Optic," Applied Optics, vol. 32, pp. 7072-7078, Dec 1993. 

222. W. S. Fann, R. Storz, H. W. K. Tom, and J. Bokor, "Direct Measurement of 

Nonequilibrium Electron-Energy Distributions in Subpicosecond Laser-Heated 

Gold-Films," Surface Science, vol. 283, pp. 221-225, Mar 1993. 

223. Attwood, G. Sommargren, R. Beguiristain, K. Nguyen, J. Bokor, N. Ceglio, K. 

Jackson, M. Koike, and J. Underwood, "Undulator Radiation for at-Wavelength 

Interferometry of Optics for Extreme-Ultraviolet Lithography," Applied Optics, vol. 

32, pp. 7022-7031, Dec 1993. 

224. R. H. Yan, K. F. Lee, D. Y. Jeon, Y. O. Kim, B. G. Park, M. R. Pinto, C. S. 

Rafferty, D. M. Tennant, E. H. Westerwick, G. M. Chin, M. D. Morris, K. Early, P. 

Mulgrew, W. M. Mansfield, R. K. Watts, A. M. Voshchenkov, J. Bokor, R. G. 

Swartz, and A. Ourmazd, "89-Ghzft Room-Temperature Silicon Mosfets," Ieee 

Electron Device Letters, vol. 13, pp. 256-258, May 1992. 

225. G. Park, J. Bokor, H. S. Luftman, C. S. Rafferty, and M. R. Pinto, "Ultrashallow 

Junctions for Ulsi Using as-2+ Implantation and Rapid Thermal Anneal," Ieee 

Electron Device Letters, vol. 13, pp. 507-509, Oct 1992. 

226. U. Mohideen, H. W. K. Tom, R. R. Freeman, J. Bokor, and P. H. Bucksbaum, 

"Interaction of Free-Electrons with an Intense Focused Laser-Pulse in Gaussian and 

Conical Axicon Geometries," Journal of the Optical Society of America B-Optical 

Physics, vol. 9, pp. 2190-2195, Dec 1992. 

227. A. Macdowell, J. E. Bjorkholm, J. Bokor, L. Eichner, R. R. Freeman, J. Z. Pastalan, 

L. H. Szeto, D. M. Tennant, O. R. Wood, T. E. Jewell, W. M. Mansfield, W. K. 

Waskiewicz, D. L. White, and D. L. Windt, "Reduction Imaging with Soft X-Rays 

for Projection Lithography," Review of Scientific Instruments, vol. 63, pp. 737-740, 

Jan 1992. 

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228. W. S. Fann, R. Storz, H. W. K. Tom, and J. Bokor, "Direct Measurement of 

Nonequilibrium Electron-Energy Distributions in Subpicosecond Laser-Heated 

Gold-Films," Physical Review Letters, vol. 68, pp. 2834-2837, May 1992. 

229. W. S. Fann, R. Storz, H. W. K. Tom, and J. Bokor, "Electron Thermalization in 

Gold," Physical Review B, vol. 46, pp. 13592-13595, Nov 1992. 

230. L. White, J. E. Bjorkholm, J. Bokor, L. Eichner, R. R. Freeman, T. E. Jewell, W. M. 

Mansfield, A. A. Macdowell, L. H. Szeto, D. W. Taylor, D. M. Tennant, W. K. 

Waskiewicz, D. L. Windt, and O. R. Wood, "Soft-X-Ray Projection Lithography," 

Solid State Technology, vol. 34, pp. 37-42, Jul 1991. 

231. A. Tichenor, G. D. Kubiak, M. E. Malinowski, R. H. Stulen, S. J. Haney, K. W. 

Berger, L. A. Brown, R. R. Freeman, W. M. Mansfield, O. R. Wood, D. M. 

Tennant, J. E. Bjorkholm, A. A. Macdowell, J. Bokor, T. E. Jewell, D. L. White, D. 

L. Windt, and W. K. Waskiewicz, "Diffraction-Limited Soft-X-Ray Projection 

Imaging Using a Laser Plasma Source," Optics Letters, vol. 16, pp. 1557-1559, Oct 

1991. 

232. A. Macdowell, J. E. Bjorkholm, J. Bokor, L. Eichner, R. R. Freeman, W. M. 

Mansfield, J. Pastalan, L. H. Szeto, D. M. Tennant, O. R. Wood, T. E. Jewell, W. K. 

Waskiewicz, D. L. White, D. L. Windt, W. T. Silfvast, and F. Zernike, "Soft-X-Ray 

Projection Lithography Using a 1-1 Ring Field Optical-System," Journal of 

Vacuum Science & Technology B, vol. 9, pp. 3193-3197, Nov-Dec 1991. 

233. D. Kubiak, D. A. Tichenor, M. E. Malinowski, R. H. Stulen, S. J. Haney, K. W. 

Berger, L. A. Brown, J. E. Bjorkholm, R. R. Freeman, W. M. Mansfield, D. M. 

Tennant, O. R. Wood, J. Bokor, T. E. Jewell, D. L. White, D. L. Windt, and W. K. 

Waskiewicz, "Diffraction-Limited Soft-X-Ray Projection Lithography with a Laser 

Plasma Source," Journal of Vacuum Science & Technology B, vol. 9, pp. 3184-

3188, Nov-Dec 1991. 

234. W. S. Fann, R. Storz, and J. Bokor, "Observation of above-Threshold Multiphoton 

Photoelectric-Emission from Image-Potential Surface-States," Physical Review B, 

vol. 44, pp. 10980-10982, Nov 1991. 

235. E. Bjorkholm, J. Bokor, L. Eichner, R. R. Freeman, W. M. Mansfield, L. Szeto, D. 

W. Taylor, D. M. Tennant, O. R. Wood, T. E. Jewell, D. L. White, W. K. 

Waskiewicz, D. L. Windt, and A. A. MacDowell, "Soft X-ray projection 

lithography," Optics & Photonics News, vol. 2, pp. 27-30, 1991. 

236. E. Bjorkholm, J. Bokor, L. Eichner, R. R. Freeman, J. Gregus, T. E. Jewell, W. M. 

Mansfield, A. A. Macdowell, M. L. Omalley, E. L. Raab, W. T. Silfvast, L. H. 

Szeto, D. M. Tennant, W. K. Waskiewicz, D. L. White, D. L. Windt, and O. R. 

Wood, "Experiments in Projection Lithography Using Soft X-Rays," 

Microelectronic Engineering, vol. 13, pp. 243-250, Mar 1991. 

237. T. E. Jewell, M. M. Becker, J. E. Bjorkholm, J. Bokor, L. Eichner, R. R. Freeman, 

W. M. Mansfield, A. A. MacDowell, M. L. O'Malley, E. L. Raab, W. T. Silfvast, L. 

H. Szeto, D. M. Tennant, W. K. Waskiewicz, D. L. White, D. L. Windt, O. R. 

Wood, II, and J. H. Bruning, "20:1 projection soft X-ray lithography using tri-level 

resist," Proceedings of the SPIE, vol. vol.1263, pp. 90-8, 1990. 

238. E. Bjorkholm, J. Bokor, L. Eichner, R. R. Freeman, J. Gregus, T. E. Jewell, W. M. 

Mansfield, A. A. Macdowell, E. L. Raab, W. T. Silfvast, L. H. Szeto, D. M. 

Tennant, W. K. Waskiewicz, D. L. White, D. L. Windt, O. R. Wood, and J. H. 

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Bruning, "Reduction Imaging at 14 Nm Using Multilayer-Coated Optics - Printing 

of Features Smaller Than 0.1-Mu-M," Journal of Vacuum Science & Technology B, 

vol. 8, pp. 1509-1513, Nov-Dec 1990. 

239. J. Halas and J. Bokor, "Surface Recombination on the Si(111)2x1 Surface," 

Physical Review Letters, vol. 62, pp. 1679-1682, Apr 1989. 

240. J. Bokor and N. J. Halas, "Time-Resolved Study of Silicon Surface 

Recombination," Ieee Journal of Quantum Electronics, vol. 25, pp. 2550-2555, Dec 

1989. 

241. J. Bokor, "Ultrafast Dynamics at Semiconductor and Metal-Surfaces," Science, vol. 

246, pp. 1130-1134, Dec 1989. 

242. S. L. Tang, J. Bokor, and R. H. Storz, "Direct Force Measurement in Scanning 

Tunneling Microscopy," Applied Physics Letters, vol. 52, pp. 188-190, Jan 1988. 

243. J. Bokor, A. M. Johnson, W. M. Simpson, R. H. Storz, and P. R. Smith, "Coplanar 

Vacuum Photodiode for Measurement of Short-Wavelength Picosecond Pulses," 

Applied Physics Letters, vol. 53, pp. 2599-2601, Dec 1988. 

244. R. Haight, J. Bokor, R. R. Freeman, and P. H. Bucksbaum, "Time and Angle 

Resolved Ultraviolet Photoemission Spectroscopy Studies of Single-Crystal Surface 

and Interfaces," Journal of Vacuum Science & Technology a-Vacuum Surfaces and 

Films, vol. 4, pp. 1481-1486, May-Jun 1986. 

245. R. Haight and J. Bokor, "Direct Observation of Adsorbate-Induced Band-Gap 

States on Gaas(110)," Physical Review Letters, vol. 56, pp. 2846-2849, Jun 1986. 

246. J. Bokor, R. Storz, R. R. Freeman, and P. H. Bucksbaum, "Picosecond Surface 

Electron Dynamics on Photoexcited Si(111) (2x1) Surfaces," Physical Review 

Letters, vol. 57, pp. 881-884, Aug 1986. 

247. J. Bokor, A. M. Johnson, R. H. Storz, and W. M. Simpson, "High-Speed Circuit 

Measurements Using Photoemission Sampling," Applied Physics Letters, vol. 49, 

pp. 226-228, Jul 1986. 

248. J. Bokor, R. R. Freeman, P. H. Bucksbaum, and R. Haight, "Time-Resolved 

Photoemission from Semiconductor Surfaces and Interfaces," Journal of the Optical 

Society of America B-Optical Physics, vol. 3, pp. P58-P58, Aug 1986. 

249. Attwood and J. Bokor, "Coherent Shortwave Sources and Optics Advance toward 

Exciting Applications," Laser Focus-Electro-Optics, vol. 22, pp. 22-&, Jul 1986. 

250. R. Haight, J. Bokor, J. Stark, R. H. Storz, R. R. Freeman, and P. H. Bucksbaum, 

"Picosecond Time-Resolved Photoemission-Study of the Inp(110) Surface," 

Physical Review Letters, vol. 54, pp. 1302-1305, 1985. 

251. W. E. Cooke, L. A. Bloomfield, R. R. Freeman, and J. Bokor, "Planetary Atoms," 

Lecture Notes in Physics, vol. 229, pp. 187-198, 1985. 

252. J. Bokor, R. Haight, R. H. Storz, J. Stark, R. R. Freeman, and P. H. Bucksbaum, 

"Time-Resolved and Angle-Resolved Photoemission-Study of Inp(110)," Physical 

Review B, vol. 32, pp. 3669-3675, 1985. 

253. J. Bokor, "Review of Coherent Xuv Sources - Lasers and Nonlinear Optics," 

Journal of the Optical Society of America a-Optics Image Science and Vision, vol. 

2, pp. P28-P28, 1985. 

254. R. M. Jopson, R. R. Freeman, W. E. Cooke, and J. Bokor, "2-Photon Spectroscopy 

of 7sn'd Autoionizing States of Barium," Physical Review A, vol. 29, pp. 3154-

3158, 1984. 

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255. R. Haight, J. Bokor, R. H. Storz, J. B. Stark, P. H. Bucksbaum, and R. R. Freeman, 

"Photoemission Apparatus Using Xuv Harmonics of a Picosecond Krf Laser," 

Proceedings of the Society of Photo-Optical Instrumentation Engineers, vol. 476, 

pp. 61-64, 1984. 

256. W. E. Cooke, R. M. Jopson, L. A. Bloomfield, R. R. Freeman, and J. Bokor, 

"Correlations in Highly Excited 2-Electron Atoms - Planetary Behavior," Aip 

Conference Proceedings, pp. 91-100, 1984. 

257. H. Bucksbaum and J. Bokor, "Rapid melting and regrowth velocities in silicon 

heated by ultraviolet picosecond laser pulses," Physical Review Letters, vol. 53, pp. 

182-5, 1984. 

258. J. Bokor, R. Haight, R. H. Storz, J. Stark, R. R. Freeman, and P. H. Bucksbaum, 

"Photoemission-Studies of Surfaces Using Picosecond Pulses of Coherent ExtremeUltraviolet Radiation," Journal of the Optical Society of America B-Optical 

Physics, vol. 1, pp. 529-529, 1984. 

259. A. Bloomfield, R. R. Freeman, W. E. Cooke, and J. Bokor, "Angular-Momentum 

Dependence of Autoionization Rates in Doubly Excited Rydberg States of Ba," 

Physical Review Letters, vol. 53, pp. 2234-2237, 1984. 

260. R. M. Jopson, R. R. Freeman, W. E. Cooke, and J. Bokor, "Electron Shake-up in 2-

Photon Excitation of Core Electrons to Rydberg Autoionizing States," Physical 

Review Letters, vol. 51, pp. 1640-1643, 1983. 

261. R. M. Jopson, S. Darack, R. R. Freeman, and J. Bokor, "Laser-Plasma-Induced 

Extreme-Ultraviolet Radiation from Liquid Mercury," Optics Letters, vol. 8, pp. 

265-267, 1983. 

262. R. W. Falcone and J. Bokor, "Dichroic Beam Splitter for Extreme-Ultraviolet and 

Visible Radiation," Optics Letters, vol. 8, pp. 21-23, 1983. 

263. H. Bucksbaum and J. Bokor, "Measurement of fast melting and regrowth velocities 

in picosecond laser heated silicon," in Laser-Solid Interactions and Transient 

Thermal Processing of Materials: Elsevier, New York, NY, USA., 1983, pp. 51-6. 

264. H. Bucksbaum and J. Bokor, "Time Resolved Amorphous-Silicon Formation from 

Laser Melted Liquid Silicon Films," Aip Conference Proceedings, pp. 279-287, 

1983. 

265. J. Bokor, L. Eichner, R. H. Storz, P. H. Bucksbaum, and R. R. Freeman, 

"Wavelength Conversion with Excimer Lasers," Aip Conference Proceedings, pp. 

143-150, 1983. 

266. J. Bokor, P. H. Bucksbaum, and R. R. Freeman, "Generation of 35.5-Nm Coherent 

Radiation," Optics Letters, vol. 8, pp. 217-219, 1983. 

267. J. Bokor, P. H. Bucksbaum, and D. H. Auston, "Measurement of Picosecond 

Ultraviolet-Laser Pulse-Widths Using an Electrical Auto-Correlator," Applied 

Physics Letters, vol. 42, pp. 342-344, 1983. 

268. J. C. White, J. Bokor, and D. Henderson, "Optically Pumped Atomic Thulium 

Lasers," Ieee Journal of Quantum Electronics, vol. 18, pp. 320-322, 1982. 

269. M. Jopson, R. R. Freeman, J. Bokor, and W. E. Cooke, "Planetary Atoms," Journal 

of the Optical Society of America, vol. 72, pp. 1835-1836, 1982. 

270. M. Jopson, R. R. Freeman, and J. Bokor, "4-Wave Sum Frequency Generation 

Below 100 Nm Hg Vapor," Applied Physics B-Photophysics and Laser Chemistry, 

vol. 28, pp. 203-203, 1982. 

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271. R. M. Jopson, R. R. Freeman, and J. Bokor, "Laser-Produced Plasmas in Hg - a 

Source of Pulsed Xuv Radiation," Aip Conference Proceedings, pp. 303-304, 1982. 

272. Heaven, T. A. Miller, R. R. Freeman, J. C. White, and J. Bokor, "2-Photon 

Absorption, Laser-Induced Fluorescence Detection of C1 Atoms," Chemical 

Physics Letters, vol. 86, pp. 458-462, 1982. 

273. R. R. Freeman, R. M. Jopson, J. Bokor, and P. Bucksbaum, "Laser Generation of 

Light in the Extreme Ultraviolet and Soft-X-Ray Regime," Aip Conference 

Proceedings, pp. 491-494, 1982. 

274. R. R. Freeman, R. M. Jopson, and J. Bokor, "Generation of Light Below 100nm in 

Hg Vapor," Aip Conference Proceedings, pp. 422-430, 1982. 

275. R. R. Freeman, J. Bokor, and W. E. Cooke, "Four-wave parametric mixing in 

optically inverted barium ions," Physical Review A (General Physics), vol. 26, pp. 

3029-30, 1982. 

276. R. R. Freeman, J. Bokor, and W. E. Cooke, "4-Wave Parametric Mixing in 

Optically Inverted Barium Ions," Physical Review A, vol. 26, pp. 3029-3030, 1982. 

277. P. H. Bucksbaum, J. Bokor, J. C. White, and R. H. Storz, "A Picosecond, Tunable 

Krf-Star Excimer Laser Source," Applied Physics B-Photophysics and Laser 

Chemistry, vol. 28, pp. 128-128, 1982. 

278. J. Bokor, R. R. Freeman, and W. E. Cooke, "Autoionization-pumped laser," 

Physical Review Letters, vol. 48, pp. 1242-5, 1982. 

279. J. Bokor, R. R. Freeman, and W. E. Cooke, "Selective Autoionization - a New 

Method for Producing Population-Inversion in Atomic Ions," Applied Physics BPhotophysics and Laser Chemistry, vol. 28, pp. 200-200, 1982. 

280. J. Bokor, R. R. Freeman, and W. E. Cooke, "Photo-Autoionization Pumped Ba Ion 

Laser," Aip Conference Proceedings, pp. 153-162, 1982. 

281. J. C. White, J. Bokor, R. R. Freeman, and D. Henderson, "Tunable Arf ExcimerLaser Source," Optics Letters, vol. 6, pp. 293-294, 1981. 

282. J. C. White, J. Bokor, and R. R. Freeman, "Narrow-Linewidth Tunable Arfstar 

Excimer-Laser Source," Ieee Journal of Quantum Electronics, vol. 17, pp. 80-80, 

1981. 

283. Rothschild, H. Egger, R. T. Hawkins, J. Bokor, H. Pummer, and C. K. Rhodes, 

"High-Resolution Spectroscopy of Molecular-Hydrogen in the Extreme Ultraviolet 

Region," Physical Review A, vol. 23, pp. 206-213, 1981. 

284. J. Bokor, R. R. Freeman, J. C. White, and R. H. Storz, "2-Photon Excitation of the 

N=3 Level in H and D Atoms," Ieee Journal of Quantum Electronics, vol. 17, pp. 

223-223, 1981. 

285. J. Bokor, R. R. Freeman, and J. C. White, "Generation of Microjoule-Level Outputs 

in the Vuv through 4-Wave Parametric Interactions in Mercury," Journal of the 

Optical Society of America, vol. 71, pp. 368-368, 1981. 

286. J. Bokor, R. R. Freeman, R. L. Panock, and J. C. White, "Generation of HighBrightness Coherent Radiation in the Vacuum Ultraviolet by 4-Wave Parametric 

Oscillation in Mercury-Vapor," Optics Letters, vol. 6, pp. 182-184, 1981. 

287. J. Bokor, R. R. Freeman, R. L. Panock, and J. C. White, "Generation of High 

Brightness Coherent Radiation in the Vuv Via 4-Wave Parametric Oscillation in 

Mercury-Vapor," Ieee Journal of Quantum Electronics, vol. 17, pp. 10-12, 1981. 

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288. J. Kligler, J. Bokor, and C. K. Rhodes, "Collisional and Radiative Properties of the 

H-2e,F1-Sigma-G+ State," Physical Review A, vol. 21, pp. 607-617, 1980. 

289. R. T. Hawkins, H. Egger, J. Bokor, and C. K. Rhodes, "A Tunable, Ultrahigh 

Spectral Brightness Krfstar Excimer Laser Source," Applied Physics Letters, vol. 

36, pp. 391-392, 1980. 

290. Egger, R. T. Hawkins, J. Bokor, H. Pummer, M. Rothschild, and C. K. Rhodes, 

"Tunable, Narrow Bandwidth 83-Nm Light-Source," Journal of the Optical Society 

of America, vol. 70, pp. 648-649, 1980. 

291. Egger, R. T. Hawkins, J. Bokor, H. Pummer, M. Rothschild, and C. K. Rhodes, 

"Generation of High-Spectral-Brightness Tunable Xuv Radiation at 83 Nm," Optics 

Letters, vol. 5, pp. 282-284, 1980. 

292. Bokor, J. Y. Zavelovich, and C. K. Rhodes, "Multi-Photon Ultraviolet Spectroscopy 

of Some 6p Levels in Krypton," Physical Review A, vol. 21, pp. 1453-1459, 1980. 

293. Bokor, J. Zavelovich, and C. K. Rhodes, "Isotope Effect in Multi-Photon 

Ultraviolet Photolysis of Co," Journal of Chemical Physics, vol. 72, pp. 965-971, 

1980. 

294. Bokor and C. K. Rhodes, "Energy Splitting between the B-State and C-State of 

Xenon Chloride," Journal of Chemical Physics, vol. 73, pp. 2626-2628, 1980. 

295. R. T. Hawkins, H. Egger, J. Bokor, and C. K. Rhodes, "Ultra-Narrow Linewidth 

Excimer Laser Sources," Journal of the Optical Society of America, vol. 69, pp. 

1449-1449, 1979. 

296. J. Eggleston, J. Dallarosa, W. K. Bischel, J. Bokor, and C. K. Rhodes, "Generation 

of 16-Mu-M Radiation in (Nh3)-N-14 by 2-Quantum Excitation of the 2-Nu-2-(7,5) 

State," Journal of Applied Physics, vol. 50, pp. 3867-3870, 1979. 

297. J. Bokor, W. K. Bischel, and C. K. Rhodes, "Doppler-Free Spectroscopy of the Nu2-Band in Nh3-N-14 - Application to 16-Mu-M Generation," Journal of Applied 

Physics, vol. 50, pp. 4541-4544, 1979. 

298. W. K. Bischel, J. Bokor, D. J. Kligler, and C. K. Rhodes, "Non-Linear Optical 

Processes in Atoms and Molecules Using Rare-Gas Halide Lasers," Ieee Journal of 

Quantum Electronics, vol. 15, pp. 380-392, 1979. 

299. W. K. Bischel, J. Bokor, J. Dallarosa, and C. K. Rhodes, "Arf Laser Photolysis of 

Ocse .2. Effect of Vibrational-Excitation on Se(1s) Quantum Yields," Journal of 

Chemical Physics, vol. 70, pp. 5593-5597, 1979. 

300. J. Bokor, W. K. Bischel, and C. K. Rhodes, "Optical Down Conversion of 10 Mu-M 

Radiation to 16 Mu-M Range," Journal of the Optical Society of America, vol. 68, 

pp. 671-672, 1978. 

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Refereed Conference Papers

1. T. Schenkel, C. D. Weis, C. C. Lo, A. Persaud, I. Chakarov, D. H. Schneider, J. 

Bokor, A. Lapierre, S. Schwarz, and T. Baumann, "Deterministic Doping and the 

Exploration of Spin Qubits," in Proceedings of the Xii International Symposium on 

Electron Beam Ion Sources and Traps. vol. 1640, pp. 124-128, 2015. 

2. B. Lambson, Z. Gu, J. Bokor, D. Carlton, S. Dhuey, A. Scholl, "Error immunity 

techniques for nanomagnetic logic," in 2012 IEEE International Electron Devices 

Meeting (IEDM), 2012, p. 4. 

3. B. Lambson, J. Bokor, "Temperature dependence of heat dissipation during 

Landauer erasure of nanomagnets," 2012 12th IEEE Conference on Nanotechnology, 

p. 3, 2012. 

4. J. Bokor, B. Lambson, D. Carlton, Z. Gu, and J. Hong, "Exploring the 

thermodynamic limits of computation using nanomagnetic logic," in Nanoenergy 

Letters (http://www.nanoenergyletters.com/node/189), 2013, p. 23. 

5. J. Bokor, "Prospects for emerging nanoelectronics in mainstream information 

processing systems," in IEEE/ACM International Conference on Computer Aided 

Design - Digest of Technical Papers. San Jose, CA, 2006. 

6. X. Liu, A. San Paulo, M. Park, and J. Bokor, "Characterization of acoustic vibration 

modes at GHz frequencies in bulk acoustic wave resonators by combination of 

scanning laser interferometry and scanning acoustic force microscopy," MEMS 2005 

Technical Digest, pp. 175-8., 2005. 

7. Yang-Kyu Choi, Daewon Ha, E. Snow, J. Bokor, and Tsu-Jae King, "Reliability 

study of CMOS FinFETs," in International Electron Devices Meeting 2003, pp. 

7.6.1-4. 

8. X. Peiqi, S. Min, B. Harteneck, A. Liddle, J. Bokor, and T. J. King, "FinFET 

SONOS flash memory for embedded applications," in IEEE International Electron 

Devices Meeting 2003, pp. 26.4.1-4. 

9. C. Yang-Kyu, C. Leland, P. Ranade, L. Jeong-Soo, H. Daewon, S. Balasubramanian, 

A. Agarwal, M. Ameen, K. Tsu-Jae, and J. Bokor, "FinFET process refinements for 

improved mobility and gate work function engineering," in International Electron 

Devices Meeting. Technical Digest, 2002, pp. 259-62. 

10. C. Yang-Kyu, N. Lindert, X. Peiqi, S. Tang, H. Daewon, E. Anderson, K. Tsu-Jae, J. 

Bokor, and H. Chenming, "Sub-20 nm CMOS FinFET technologies," in 

International Electron Devices Meeting. Technical Digest, 2001, pp. 19.1.1-4. 

11. S. H. Tang, L. Chang, N. Lindert, C. Yang-Kyu, L. Wen-Chin, H. Xuejue, V. 

Subramanian, J. Bokor, K. Tsu-Jae, and H. Chenming, "FinFET-a quasi-planar 

double-gate MOSFET," in 2001 IEEE International Solid-State Circuits Conference. 

Digest of Technical Papers, 2001, pp. 118-19. 

12. Y. Moonsuk, T. Haga, C. Walton, and J. Bokor, ""Actinic-only" defects in EUVL 

mask blanks-native defects, barely detectable by visible-light inspection," in 2001 

International Microprocesses and Nanotechnology Conference, 2001, pp. 88-9. 

13. N. Lindert, C. Yang-Kyu, C. Leland, E. Anderson, L. Wenchin, K. Tsu-Jae, J. 

Bokor, and H. Chenming, "Quasi-planar NMOS FinFETs with sub-100 nm gate 

lengths," in Device Research Conference, 2001, pp. 26-7. 

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14. N. Lindert, Y. K. Choi, L. Chang, E. Anderson, W. C. Lee, T. J. King, J. Bokor, and 

C. Hu, "Quasi-planar FinFETs with selectively grown germanium raised 

source/drain," in IEEE International SOI Conference, 2001, pp. 111-12. 

15. J. Kedzierski, I. MeiKei, X. Peiqi, J. Bokor, K. Tsu-Jae, and H. Chenming, "Design 

analysis of thin-body silicide source/drain devices," in IEEE International SOI 

Conference, 2001, pp. 21-2. 

16. S. H. Tang, X. Peiqi, J. Bokor, and H. Chenming, "Comparison of short-channel 

effect and offstate leakage in symmetric vs. asymmetric double gate MOSFETs," in 

IEEE International SOI Conference, 2000, pp. 120-1. 

17. X. Peiqi, J. Kedzierski, V. Subranmanian, J. Bokor, K. Tsu-Jae, and H. Chenming, 

"60 nm planarized ultra-thin body solid phase epitaxy MOSFETs," in 58th DRC. 

Device Research Conference, 2000, pp. 67-8. 

18. J. Kedzierski, P. Xuan, E. H. Anderson, J. Bokor, K. Tsu-Jae, and H. Chenming, 

"Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate 

length regime," in International Electron Devices Meeting, 2000, pp. 57-60. 

19. Y. -K. Choi, J. Yoo-Chan, P. Ranade, H. Takenuchi, Tsu-Jae King, J. Bokor, and H. 

C. Hu, "30 nm ultra-thin-body SOI MOSFET with selectively deposited Ge raised 

S/D," in 58th DRC. Device Research Conference, 2000, pp. 23-4. 

20. L. Chang, S. Tang, Tsu-JaeKing,, J. Bokor, and C. Hu, "Gate length scaling and 

threshold voltage control of double-gate MOSFETs," in International Electron 

Devices Meeting, 2000, pp. 719-22. 

21. Yang-Kyu Choi, K. Asano, N. Lindert, V. Subramanian, Tsu-Jae King, J. Bokor, and 

C. Hu, "Ultra-thin body SOI MOSFET for deep-sub-tenth micron era," in 

International Electron Devices Meeting 1999, pp. 919-21. 

22. Xuejue Huang, Wen-Chin Lee, Charles Kuo, D. Hisamoto, Leland Chang, J. 

Kedzierski, E. Anderson, H. Takeuchi, Yang-Kyu Choi, K. Asano, V. Subramanian, 

Tsu-Jae King, J. Bokor, and C. Hu, "Sub 50-nm FinFET: PMOS," in International 

Electron Devices Meeting, 1999, pp. 67-70. 

23. V. Subramanian, J. Kedzierski, N. Lindert, H. Tam, Y. Su, J. McHale, K. Cao, T. J. 

King, J. Bokor, and C. Hu, "A bulk-Si-compatible ultrathin-body SOI technology for 

sub-100 nm MOSFETs," in 57th Annual Device Research Conference, 1999, pp. 28-

9. 

24. M. S. Krishnan, L. Chang, K. Tsu-Jae, J. Bokor, and C. Hu, "MOSFETs with 9 to 13 

A thick gate oxides," in International Electron Devices Meeting, 1999, pp. 241-4. 

25. M. Orshansky, D. Sinitsky, P. Scrobahaci, J. Bokor, and C. Hu, "Impact of velocity 

overshoot, polysilicon depletion, and inversion layer quantization on NMOSFET 

scaling," in 56th Annual Device Research Conference, 1998, pp. 18-19. 

26. M. S. Krishnan, Yee Chia Yeo, Qiang Lu, Tsu-Jae King, J. Bokor, and C. Hu, 

"Remote charge scattering in MOSFETs with ultra-thin gate dielectrics," in 

International Electron Devices Meeting, 1998, pp. 571-4. 

27. D. Sinitsky, F. Assaderaghi, M. Orshansky, J. Bokor, and C. Hu, "An extension of 

BSIM3 model incorporating velocity overshoot," in International Symposium on 

VLSI Technology, Systems, and Applications, 1997, pp. 307-10. 

28. H. C. Wann, C. Hu, K. Noda, D. Sinitsky, F. Assaderaghi, and J. Bokor, "Channel 

doping engineering of MOSFET with adaptable threshold voltage using body effect 

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Curriculum Vitae - Jeffrey Bokor 

Resume of Jeffrey Bokor, Ph.D. 33 

for low voltage and low power applications," in International Symposium on VLSI 

Technology, Systems, and Applications, 1995, pp. 159-63. 

29. F. Assaderaghi, D. Sinitsky, S. Parke, J. Bokor, P. K. Ko, and C. Hu, "A dynamic 

threshold voltage MOSFET (DTMOS) for ultra-low voltage operation," in 

International Electron Devices Meeting, 1994, pp. 809-12. 

30. F. Assaderaghi, D. Sinitsky, H. Gaw, J. Bokor, P. K. Ko, and C. Hu, "Saturation 

velocity and velocity overshoot of inversion layer electrons and holes," in 

International Electron Devices Meeting, 1994, pp. 479-82. 

31. R. H. Yan, K. F. Lee, D. Y. Jeon, Y. O. Kim, B. G. Park, M. R. Pinto, C. S. Rafferty, 

D. M. Tennant, E. H. Westerwick, G. M. Chin, M. D. Morris, K. Early, P. Mulgrew, 

W. M. Mansfield, R. K. Watts, A. M. Voshchenkov, J. Bokor, R. G. Swartz, and A. 

Ourmazd, "High performance 0.1-μm room temperature Si MOSFETs," in 1992 

Symposium on VLSI Technology., 1992, pp. 86-7. 

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