# Patent

## Title
Apparatus and method for temperature control of a semiconductor substrate support

## Abstract

A recirculation system of a substrate support on which a semiconductor substrate is subjected to a multistep process in a vacuum chamber, the system comprising a substrate support having at least one liquid flow passage in a base plate thereof, an inlet and an outlet in fluid communication with the flow passage, a supply line in fluid communication with the inlet, and a return line in fluid communication with the outlet; a first recirculator providing liquid at temperature T1 in fluid communication with the supply line and the return line; a second recirculator providing liquid at temperature T2 in fluid communication with the supply line and the return line, temperature T2 being at least 10° C. above temperature T1; a pre-cooling unit providing liquid at temperature Tpc connected to the inlet and the outlet, temperature Tpc being at least 10° C. below T1; a pre-heating unit providing liquid at temperature Tph connected to the inlet and the outlet, temperature Tph being at least 10° C. above T2; a controller operable to selectively operate valves of the recirculation system to recirculate liquid between the flow passage and the first recirculator, the second recirculator, the pre-cooling unit or the pre-heating unit.

## Background
BACKGROUND
With each successive semiconductor technology generation, wafer diameters tend to increase and transistor sizes decrease, resulting in the need for an ever higher degree of accuracy and repeatability in wafer processing. Semiconductor substrate materials, such as silicon wafers, are processed by techniques which include the use of vacuum chambers. These techniques include non plasma applications such as electron beam evaporation, as well as plasma applications, such as sputter deposition, plasma-enhanced chemical vapor deposition (PECVD), resist strip, and plasma etch.
Success metrics for a plasma processing system include throughput and substrate temperature stability. Substrate temperature affects critical dimensions of devices fabricated on a substrate and thus must not significantly drift when stable substrate temperature is required, e.g. within a step in a processing recipe. On the other hand, optimum substrate temperature can be significantly different for different process steps within a process recipe. The rate of change in substrate temperature directly impacts the throughput. Therefore, a capability of quickly changing substrate temperature between process steps while maintaining stable substrate temperature within a process step is desirable. Electrically-based heating approaches are complicated by the need for compatibility with radio frequency energy used in a plasma processing system, requiring custom filtering to protect power and control systems for electrical heaters. Design and implementation challenges also exist regarding power connections. In addition, challenges involving heater layout to optimize thermal uniformity can be significant.
SUMMARY
A recirculation system of a substrate support on which a semiconductor substrate is subjected to a multistep process in a vacuum chamber, the system comprising: a substrate support having at least one liquid flow passage in a base plate thereof, an inlet and an outlet in fluid communication with the flow passage, a supply line in fluid communication with the inlet, and a return line in fluid communication with the outlet; a first recirculator providing liquid at temperature T1 to the supply line and the return line, the first recirculator being in fluid communication with the supply line and the return line; a second recirculator providing liquid at temperature T2 to the supply line and the return line, the second recirculator in fluid communication with the supply line and the return line, temperature T2 being at least 10° C. above temperature T1; a pre-cooling unit providing liquid at temperature Tpc to the supply line and the return line, temperature Tpc being at least 10° C. below T1; a pre-heating unit providing liquid at temperature Tph to the supply line and the return line, temperature Tph being at least 10° C. above T2; a controller operable to selectively operate valves of the recirculation system to direct liquids at T1, T2, Tpc or Tph provided by the first recirculator, the second recirculator, the pre-cooling unit or the pre-heating unit through the supply line and the return line.
A method of operating a recirculation system of a substrate support on which a semiconductor substrate is subjected to a multistep process in a vacuum chamber, the method comprising: circulating liquid in a substrate support having at least one liquid flow passage in a base plate thereof, an inlet and an outlet in fluid communication with the flow passage, a supply line in fluid communication with the inlet, and a return line in fluid communication with the outlet, wherein the method includes: supplying liquid at temperature T1 to the flow passage, the liquid at temperature T1 being supplied by a first recirculator in fluid communication with the supply line and the return line; supplying liquid at temperature T2 to the flow passage, the liquid at temperature T2 being supplied by a second recirculator in fluid communication with the supply line and the return line, temperature T2 being at least 10° C. above temperature T1; supplying liquid at temperature Tpc to the flow passage, temperature Tpc being at least 10° C. below T1; supplying liquid at temperature Tph to the flow passage, temperature Tph being at least 10° C. above T2; the liquid at temperature Tpc being supplied immediately prior to supplying the liquid at temperature T1; the liquid at temperature Tph being supplied immediately prior to supplying the liquid at temperature T2.



BRIEF DESCRIPTION OF FIGURES
FIG. 1 shows a diagram of a prior art temperature control system.
FIG. 2 shows a diagram of another prior art temperature control system.
FIG. 3 is a graph of temperature versus time for the substrate support and the temperature control system shown in FIG. 2.
FIG. 4 is a graph of temperature versus time for a substrate support and a temperature control system according to embodiments described herein.
FIG. 5A is a diagram showing fluid connections between four temperature controlled fluid sources supplying fluid at different temperatures and a substrate support in a temperature control system according to embodiments described herein.
FIG. 5B shows a temperature control system according to an embodiment.
FIG. 5C shows a temperature control system according to an embodiment.
FIG. 6A is a diagram showing fluid connections between four temperature controlled fluid sources supplying fluid at different temperatures and a substrate support in a temperature control system according to embodiments described herein.
FIG. 6B shows a temperature control system according to an embodiment.
FIG. 6C shows a temperature control system according to an embodiment.
FIG. 6D shows a temperature control system according to an embodiment.
FIG. 6E shows a temperature control system according to an embodiment.
FIG. 6F shows a temperature control system according to an embodiment.
FIGS. 7A and 7B show schematics of two states of a four-way cross-over valve, respectively.
FIGS. 7C and 7D show schematics of two states of a three-way switching valve, respectively.
FIGS. 7E and 7F show schematics of two states of a two-way valve, respectively.
FIG. 8 shows a temperature control system according to an embodiment.
FIG. 9 shows actual test data on an exemplary multistep process.



DETAILED DESCRIPTION
Disclosed herein is a recirculation system which can rapidly change substrate temperature in a plasma processing system by circulating a temperature controlled liquid (e.g. FluorinertTM dielectric fluid) through one or more flow passages embedded in a substrate support, on which a substrate is processed in a plasma chamber. The flow passage(s) can be arranged to provide single or multiple zone temperature control, e.g. the flow passage can effect temperature control of an entire substrate support surface of the substrate support or a single zone (thermal zone) such as a center zone or outer annular zone of the substrate support surface of the substrate support 100. Preferably, temperature of the substrate is controlled solely by the liquid circulating in the flow passage(s), i.e. the substrate support preferably does not have an electrical heater so as to avoid issues associated therewith, such as coupling of radio-frequency (RF) power control circuitry of the electrical heater. The substrate support preferably includes an arrangement to supply a heat transfer gas such as helium under the substrate to improve thermal conduction between the substrate and the substrate support and the substrate support can be a grounded or powered electrode supplied radiofrequency current (RF) to provide an RF bias on the substrate or generate plasma in the chamber.
FIG. 1 shows a prior art system wherein the liquid is circulated between the substrate support 100 and a temperature control unit such as a recirculator 110 with a large fluid reservoir maintained at a constant temperature. A typical flow rate from the recirculator 110 is about 4 gallons/minute. Large thermal capacitance of the large fluid reservoir renders this approach very effective in maintaining a stable fluid temperature, but is undesirably slow in changing the fluid temperature during a multistep process wherein rapid changes in substrate temperatures are desired such as during plasma etching.
As shown in FIG. 2, a conventional approach to maintain two different substrate temperatures during two different process steps and switching therebetween includes connecting two temperature control units, such as recirculators 210 and 220 to the substrate support 100. Each of the recirculators maintains a large fluid (liquid) reservoir at a temperature required in one of the process steps. Two valves 261 and 262 are configured to cooperatively switch the fluid flowing through the substrate support 100 between the two recirculators 210 and 220. Difference in fluid levels in the recirculators 210 and 220 can occur over time and equalization thereof can become necessary.
For a plasma processing system wherein a temperature gradient within the substrate support is small and response of the substrate support to heat transfer is quite uniform, the substrate support can be described using the lumped thermal capacity model. In this model, the substrate support can be described as a thermal capacitance and thermal resistance in parallel connected to a temperature source, which can be the fluid circulating through the substrate support. The temperature of the substrate support (Tsub) is given by a differential equation:




  
    
      
        
          
            d
            
              T
              sub
            
          
          
            d
            t
          
        
        =
        
          -
          
            
              (
              
                
                  T
                  sub
                
                -
                
                  T
                  0
                
              
              )
            
            
              R
              ⁢
              
                
              
              ⁢
              C
            
          
        
      
    
    
      
        (
        
          Eq
          .
          
            
          
          ⁢
          1
        
        )
      
    
  




wherein t is time; C is the thermal capacity of the substrate support; R is the thermal resistance between the temperature source (e.g. the circulating fluid) and the substrate support; T0 is the temperature of the temperature controlled fluid source. The thermal resistance R=1/hA, wherein h is the heat transfer coefficient and A is the heat transfer surface area, between the temperature source and the substrate support. The thermal capacity of the substrate support C=ρcV, wherein ρ is the density, c is the specific heat and V is the volume, of the substrate support.

FIG. 2 shows a prior art system with two (e.g., cold and hot) recirculators and FIG. 3 shows representational temperature profiles of the substrate support and liquid circulating in the substrate support. However, FIG. 3 does not take into account plasma heating of the wafer, e.g., during plasma etching the wafer may be 50 to 80° C. hotter than the substrate support temperature. A trace 320 shows the fluid temperature T0 flowing in the substrate support 100 as a function of time; a trace 310 shows Tsub as a function of time in response to the fluid temperature. Prior to time t1, the valves 261 and 262 direct fluid from the cold recirculator 210 through the substrate support 100. The recirculator 210 maintains a reservoir temperature at T1. At time t1, the valves 261 and 262 cut off fluid flow from the recirculator 210 and direct fluid at temperature T2 from the hot recirculator 220 through the substrate support 100. The recirculator 220 maintains a reservoir temperature T2 which is higher than T1. At time t2, the valves 261 and 262 cut off fluid flow from the recirculator 220 and again direct fluid from the recirculator 210 through the substrate support 100. T1 is a substrate support temperature required by a process step before time t1 and after time t2. T2 is a substrate support temperature required by a process step between times t1 and t2.
For simplicity, Tsub before time t1 is assumed to be T1. Tsub as a function of time is deduced from Eq. 1 and plotted as the trace 310. Upon abrupt switching of the fluid between the recirculators 210 and 220 at times t1 and t2, Tsub shows an exponential change, with a time constant τ1=RC. The time constant τ1 is a measure of how fast Tsub changes in response to an abrupt fluid temperature change. The time constant τ1 affects the throughput of the plasma processing system, because substrate support temperature must be stabilized before a process step can begin. The effect of the time constant τ1 on the throughput becomes pronounced as the time constant τ1 becomes comparable with a typical time duration of a process step. Therefore, it is desirable to minimize the time constant τ1.
The recirculation system and the method of using the recirculation system as described herein decrease the time constants by accelerating heat transfer to or from the substrate support 100 by transiently flowing fluids above or below the required substrate support temperatures through the substrate support 100. A trace 420 in FIG. 4 shows the fluid temperature flowing in the substrate support 100 as a function of time wherein a trace 410 shows Tsub as a function of time. Before time t3, a first fluid at temperature T1 is flowed through the substrate support 100. At time t3, the first fluid is cut off and a pre-heated fluid at temperature Tph is flowed through the substrate support 100, wherein Tph is higher than T2. At time t4 when Tsub is within a predefined tolerance to T2 (e.g. within 2° C., preferably within 1° C., more preferably within 0.5° C.), the pre-heated fluid is cut off and a second fluid at temperature T2 is flowed through the substrate support 100. Similarly, at time t5, the second fluid is cut off and a pre-cooled fluid at temperature Tpc is flowed through the substrate support 100, wherein Tpc is lower than T1. At time t6 when the temperature of the substrate 100 is within a predefined tolerance to T1 (e.g. within 2° C., preferably within 1° C., more preferably within 0.5° C.), the pre-cooled fluid is cut off and the first fluid is again flowed through the substrate support 100. T1 is a substrate support temperature required by a process step before time t3 and after time t6. T2 is a substrate support temperature required by a process step between times t4 and t5. One advantage of the recirculation system and the method of using the recirculation system is that Tsub reaches a target substrate support temperatures faster without significant overshooting.
For simplicity, Tsub before time t3 is assumed to be T1. Tsub as a function of time is deduced from Eq. 1 and plotted as the trace 410. Similar to the trace 310 in FIG. 3, Tsub shows an exponential change after times t3 and t5, with a time constant τ2 wherein τ2 is less than τ1. This shortened time constant increases throughput in the plasma processing system. Tph is preferably higher than T2 by at least 10° C., more preferably at least 30° C. is preferably lower than T1 by at least 10° C., more preferably at least 30° C. The difference between t4 and t3 (Δtph) is a fraction of a time period between t4 and t5 (Δth). For example, Δth can be from 50 to 200 seconds, and Δtph can be up to 50%, 30% or 10% of Δth. Δtph is preferably no greater than 60 seconds, e.g., up to 40 seconds, up to 20 seconds, up to 10 seconds, or up to 5 seconds. The difference between t6 and t5 (Δtpc) is a fraction of a time period (Δtc) between t6 and a next time point when pre-heated fluid begins flowing through the substrate support 100. For example, Δtc can be from 50 to 200 seconds, and Δtpc can be less than 50%, 30% or 10% of Δth. Δtc is preferably no greater than 60 seconds, e.g., less than 40 seconds, up to 20 seconds, up to 10 seconds or up to 5 seconds. T1 is preferably from −10° C. to 50° C., more preferably from 10° C. to 50° C. T2 is preferably from 30° C. to 110° C., more preferably from 70° C. to 110° C. T2 is preferably at least 10° C. higher than T1, e.g., at least 20° C., at least 30° C., at least 40° C., or at least 50° C. higher than T1. The rate of change in Tsub during τ2 is preferably at least 1° C./second. In an exemplary process wherein Tsub is to be maintained in alternate steps at T1 and T2 for up to 50 seconds in each step, and τ1 is up to 50 seconds and τ2 is up to 25 seconds, a recirculation system according to an embodiment herein can enhance the throughput by about 33%.
Flow rates of the pre-heated liquid, the pre-cooled liquid, the first liquid and the second liquid can be constant or varied, e.g., the same or different flow rates. An exemplary flow rate is up to 30 liters per minute, e.g., about 18 liters per minute.
Described hereinbelow are implementations of the approach shown in FIG. 4, wherein a separate temperature control unit (pre-charge heating unit or PREH) and another separate temperature control unit (pre-charge cooling unit or PREC) are employed.
In a first embodiment, a recirculator is used as PREH and another recirculator is used as PREC, whereby, in conjunction with main recirculators, fluid can be circulated at any one of four temperatures (T1, T2, Tpc, Tph). As shown in FIG. 5A, 510 is a main recirculator with a reservoir temperature of T1; 530 is the PREC with a reservoir temperature of Tpc; 520 is a main recirculator with a reservoir temperature of T2 which is greater than T1 by at least 10° C., at least 20° C., at least 30° C., at least 40° C., at least 50° C., at least 60° C., or more; and 540 is the PREH with a reservoir temperature of Tph. Valve arrangements 561 and 562 are automatically operated to cooperatively direct fluid from one of the recirculators into the substrate support 100. FIG. 5A is a simplified diagram showing logic connections between a controller 590 and the valve arrangements 561 and 562, which connect the recirculators 510-540 to the substrate support 100, without showing details of implementation. The PREC preferably cools fluid (liquid) at temperature Tpc of at least 10° C., at least 20° C., at least 30° C., at least 40° C., at least 50° C., at least 60° C., or more below the temperature T1 of the fluid circulated by recirculator 510. The PREH preferably heats fluid at temperature Tph of at least 10° C., at least 20° C., at least 30° C., at least 40° C., at least 50° C., at least 60° C., or more above the temperature T2 of the fluid circulated by recirculator 520.
In the FIG. 5A implementation, fluid at Tpc flows from recirculator 530 through line 511, valve 561, line 512, substrate support 100, line 513, valve 562, line 514 and back to recirculator 530. To switch over to fluid at T1 from recirculator 510, valves 561, 562 are connected to lines 515, 516 so that fluid flows from recirculator 510, through line 515, valve 561, line 512, through substrate support 100, line 513, valve 562, line 516 and back to recirculator 510. To switch over to fluid at Tph, valves 561, 562 are connected to lines 517, 518 so that fluid flows from recirculator 540, through line 517, valve 561, line 512, substrate support 100, line 513, valve 562, line 518 and back to recirculator 540. To circulate fluid at T2, valves 561, 562 are connected to lines 518a, 519 and fluid from recirculator 520 passes through line 518a, valve 561, line 512, substrate support 100, line 513, valve 562, line 519 and back to recirculator 520. A controller 590 actuates the valves 561 and 562.
FIG. 5B shows one implementation of the first embodiment wherein a plurality of three-way switching valves 571-576 cooperatively direct fluid from one of the recirculators into the substrate support 100. As shown in FIGS. 7C and 7D, a three-way switching valve 730 has a common path 735, a first branching path 731 and a second branching path 732. The three-way switching valve 730 is operable to establish fluidic communication between the common path 735 and the first branching path 731, or between the common path 735 and the second branching path 732. Three-way switching valves which can be used include Swagelok 40 series and 40G series valves. The three-way switching valve 730 can be electronically actuated.
Referring to FIG. 4 and FIG. 5B, before time t3, fluid at T1 flows from the recirculator 510, sequentially through line 521, valve 575, line 522, valve 571, line 523, substrate support 100, line 524, valve 572, line 525, valve 573, line 526, and back to the recirculator 510. Between times t3 and t4, fluid at Tph flows from the recirculator 540, sequentially through line 541, valve 576, line 542, valve 571, line 523, substrate support 100, line 524, valve 572, line 543, valve 574, line 544, and back to the recirculator 540. Between times t4 and t5, fluid at T2 flows from the recirculator 520, sequentially through line 545, valve 576, line 542, valve 571, line 523, substrate support 100, line 524, valve 572, line 543, valve 574, line 546, and back to the recirculator 520. Between times t5 and t6, fluid at Tpc flows from the recirculator 530, sequentially through line 547, valve 575, line 522, valve 571, line 523, substrate support 100, line 524, valve 572, line 525, valve 573, line 548, and back to the recirculator 530. After time t6, the flow pattern is the same as that before time t3. Two-way valves 577, 579, 578 and 580 are connected between the branch lines leading to the inlets and the outlets of the recirculators 530, 510, 540 and 520, respectively. A controller 591 actuates the valves 571-580.
As shown in FIGS. 7E and 7F, a two-way valve 720 has two flow paths 721 and 722 and is operable to establish or eliminate fluidic communication between the two paths 721 and 722. Details of an exemplary two-way valve can be found in Swagelok 40 series and 40G series catalog. The three-way switching valve 720 can be electronically actuated. The two-way valves are operable to open and allow fluid in their respective recirculators to circulate only when fluid is not flowing from their respective recirculators into the substrate support 100.
FIG. 5C shows another arrangement of the first embodiment, wherein a plurality of four-way crossover valves 581-586 cooperatively direct fluid from one of the recirculators into the substrate support 100. As shown in FIGS. 7A and 7B, a four-way crossover valve 740 has a first path 741, a second path 742, a third path 743 and a fourth path 744. The four-way crossover valve 740 is operable to establish fluidic communication between the first and second paths 741 and 742 and between the third and fourth paths 743 and 744, as shown in FIG. 7B, or between the first and fourth paths 741 and 744 and between the second and third paths 742 and 743, as shown in FIG. 7A. Details of an exemplary four-way crossover valve can be found in Swagelok 40 series and 40G series catalog. The four-way crossover valve 740 can be electronically actuated.
Referring FIG. 4 and FIG. 5C, before time t3, fluid at T1 flows from the recirculator 510, sequentially through line 551, valve 583, line 552, valve 581, line 553, substrate support 100, line 554, valve 582, line 568, valve 581, line 555, valve 585, line 556, and back to the recirculator 510. At the same time, the other recirculators can be maintained in standby mode such that fluid from the recirculator 530 circulates through line 557, the valve 583, line 558, valve 585 and line 559 back to the recirculator 530; fluid from the recirculator 540 circulates through line 561, the valve 586, line 562, valve 582, line 563, valve 584, line 564 and back to recirculator 540; fluid from the recirculator 520 circulates through line 565, the valve 586, line 566, valve 584 and line 567 back to recirculator 540.
Between times t3 and t4, fluid at Tph flows from the recirculator 540, sequentially through line 561, valve 586, line 562, valve 582, line 568, valve 581, line 553, substrate support 100, line 554, valve 582, line 563, valve 584, line 564, and back to the recirculator 540. At the same time, fluid from the recirculator 530 circulates through line 557, valve 583, line 552, valve 581, line 555, valve 585, line 559 back to recirculator 530; fluid from the recirculator 510 circulates through line 551, valve 583, line 558, valve 585, line 556 back to recirculator 510; and fluid from the recirculator 520 circulates through line 565, valve 586, line 566, valve 584, line 567 back to recirculator 520.
Between times t4 and t5, fluid at T2 flows from the recirculator 520, sequentially through line 565, valve 586, line 562, valve 582, line 568, valve 581, line 553, substrate support 100, line 554, valve 582, line 563, valve 584, line 567, and back to the recirculator 520. At the same time, fluid from the recirculator 530 circulates through lines 557, 558, 559 and valves 583 and 585; fluid from the recirculator 510 circulates through lines 551, 552, 555, 556 and valves 583, 581 and 585; and fluid from the recirculator 540 circulates through line 561, valve 586, line 566, valve 584, line 564 back to recirculator 540.
Between times t5 and t6, fluid at Tpc flows from the recirculator 530, sequentially through line 557, valve 583, line 552, valve 581, line 553, substrate support 100, line 554, valve 582, line 568, valve 581, line 555, valve 585, line 559, and back to the recirculator 530. At the same time, fluid from the recirculator 510 circulates through line 551, valve 583, line 558, valve 585 and line 556 back to recirculator 510; fluid from the recirculator 540 circulates through line 561, valve 586, line 562, valve 582, line 563, valve 584, line 564 and back to recirculator 540; and fluid from the recirculator 520 circulates through line 565, valve 586, line 566, valve 584, line 567 and back to recirculator 520. After time t6, the flow pattern is the same as that before time t3. A controller 592 actuates the valves 581-586.
The embodiment shown in FIG. 5C has an advantage in that fluid in the entire circulation system flows at all times (i.e. without dead volume) and fluid at any one of the four temperatures T1, T2, Tpc, Tph can be readily supplied to the substrate support.
A second embodiment uses two online heating and cooling units as PREH and PREC. Online units have small internal volumes and can be described as simple thermal masses supported by independent energy sources. Inherent heat capacity of an online unit is sufficiently large to change fluid temperature between T1, T2, Tpc, and Tph as fluid passes through the online unit. An online unit can be a Noah Precision POU 3300/3500, a Komatsu FRV-6000 or any suitable equivalent. As shown in FIG. 6A, 610 is a main recirculator with a low reservoir temperature of T1; an online cooling unit 630 functions as the PREC by cooling fluid flowing from the main recirculator 610 through the online unit 630 to a temperature of Tpc; 620 is a main recirculator with a high reservoir temperature of T2; and an online heating unit 640 functions as the PREH by heating fluid flowing from the main recirculator 620 through the online unit 640 to a temperature of Tph. A valve 663 is operable to direct fluid passing through line 611 from the main recirculator 610 so as to bypass or pass through the online unit 630, through line 612, valve 661, line 613, substrate support 100, line 614, valve 662, line 615 and back to recirculator 610. A valve 664 is operable to direct fluid passing through line 616 from the main recirculator 620 so as to bypass or pass through the online unit 640 through line 617, valve 661, line 613, substrate support 100, line 614, valve 662, line 618 and back to recirculator 620. Valves 661 and 662 cooperatively direct fluid from one of the recirculators 610 and 620, or one of the online units 630 and 640, into the substrate support 100. FIG. 6A is a simplified diagram showing logic connections between the recirculators, online units and the substrate support 100, without showing all details of implementation. A controller 695 actuates valves 661-664.
FIG. 6B shows an implementation of the second embodiment, wherein a plurality of three-way switching valves 671-674 and two-way valves 675-676 cooperatively direct fluid from one of the recirculators or one of the online units into the substrate support 100. Referring to FIG. 4 and FIG. 6B, before time t3, fluid at T1 flows through line 621 from the recirculator 610, sequentially through valve 673, line 622, valve 671, line 623, substrate support 100, line 624, valve 672, line 625, and back to the recirculator 610. Between times t3 and t4, fluid at Tph flows through line 626 from the recirculator 620, sequentially through valve 676, online unit 640, line 627, valve 674, line 628, valve 671, line 623, substrate support 100, line 624, valve 672, line 629, and back to the recirculator 620. Between times t4 and t5, fluid at T2 flows from the recirculator 620, sequentially through line 631, valve 674, line 628, valve 671, line 623, substrate support 100, line 624, valve 672, line 629 and back to the recirculator 620. Between times t5 and t6, fluid at Tpc flows from the recirculator 610, sequentially through line 632, valve 675, line 636, online unit 630, line 633, valve 673, line 622, valve 671, line 623, substrate support 100, line 624, valve 672, line 625, and back to the recirculator 610. After time t6, the flow pattern is the same as that before time t3.
A two-way valve 677 is located along branch line 634 extending between lines 621 and 625 to the inlet and outlet of the recirculator 610. A two-way valve 678 is located along branch line 635 extending between lines 631 and 629 to the inlet and outlet of the recirculator 620. The two-way valves 677 and 678 are operable to open and allow fluid in their respective recirculators to locally circulate only when their respective recirculators are not feeding fluid into the substrate support 100, either directly or through an online unit. The two-way valve 675 and the valve 673 cooperatively direct fluid from the recirculator 610 so as to pass through or bypass the online unit 630. The two-way valve 676 and the valve 674 cooperatively direct fluid from the recirculator 620 so as to pass through or bypass the online unit 640. A controller 696 actuates valves 671-678.
FIG. 6C shows another implementation of the second embodiment, wherein a plurality of three-way switching valves 681-684 and 687-688 cooperatively direct fluid from one of the recirculators or one of the online units into the substrate support 100. Referring to FIG. 4 and FIG. 6C, before time t3, fluid at T1 flows from the recirculator 610, sequentially through line 641, valve 687, line 642, valve 683, line 643, valve 681, line 644, substrate support 100, line 645, valve 682, line 646, and back to the recirculator 610. Between times t3 and t4, fluid at Tph flows from the recirculator 620, sequentially through line 651, valve 688, line 652, online unit 640, line 653, valve 684, line 654, valve 681, line 644, substrate support 100, line 645, valve 682, line 655, and back to the recirculator 620. Between times t4 and t5, fluid at T2 flows from the recirculator 620, sequentially through line 651, valve 688, line 656, valve 684, line 654, valve 681, line 644, substrate support 100, line 645, valve 682, line 655, and back to the recirculator 620. Between times t5 and t6, fluid flows from the recirculator 610, sequentially through line 641, valve 687, line 647, online unit 630, line 648, valve 683, line 643, valve 681, line 644, substrate support 100, line 645, valve 682, line 646, and back to the recirculator 610. After time t6, the flow pattern is the same as that before time t3.
Two-way valves 685, 686, 689 and 690 located along branch lines 649, 657, 658, 659 which are connected between inlets and outlets of the online units 630 and 640 and the recirculators 610 and 620, respectively. The two-way valves 689 and 690 are operable to open and allow fluid in the recirculators 620 to locally recirculate while fluid is fed to the substrate support 100 via recirculator 610 either directly or through online unit 630 or fluid is recirculated locally through branch line 658 to recirculator 610 while recirculator 620 supplies fluid to the substrate support 100. The two-way valves 685 and 686 are operable to open and allow fluid in their respective online units to locally recirculate when the online units are not feeding fluid into the substrate support 100. With this arrangement, valves 687 and 683 can cooperatively direct fluid from the recirculator 610 so as to pass through or bypass the online unit 630. Likewise, valves 688 and 684 can cooperatively direct fluid from the recirculator 620 so as to pass through or bypass the online unit 640. A controller 697 actuates valves 681-690.
FIG. 6D shows another implementation of the second embodiment, identical to the embodiment in FIG. 6C except that the two-way valves 685 and 686 are omitted. A controller 698 actuates valves 681-684 and 687-690.
FIG. 6E shows another implementation of the second embodiment, wherein a plurality of four-way crossover valves 691-694 cooperatively direct fluid from one of the recirculators or the online units into the substrate support 100. A controller 699 actuates valves 691-694.
Referring FIG. 4 and FIG. 6E, before time t3, fluid at T1 flows through line 661 from the recirculator 610, sequentially through valve 693, line 662, valve 691, line 663, substrate support 100, line 664, valve 692, line 665, valve 691, line 666, and back to the recirculator 610. At the same time, fluid from the online unit 630 circulates through lines 667, 668 and valve 693; fluid from the online unit 640 circulates through lines 671, 672 and valve 694; and fluid from the recirculator 620 circulates through lines 673, 674, 675 and the valves 694 and 692.
Between times t3 and t4, fluid at Tph flows from the recirculator 620, sequentially through line 673, valve 694, line 672, online unit 640, line 671, valve 694, line 674, valve 692, line 665, valve 691, line 663, substrate support 100, line 664, valve 692, line 675, and back to the recirculator 620. At the same time, fluid from the online unit 630 circulates through lines 667, 668 and valve 693; and fluid from the recirculator 610 circulates through lines 661, 662, 666 and valves 693 and 691.
Between times t4 and t5, fluid at T2 flows from the recirculator 620, sequentially through line 673, valve 694, line 674, valve 692, line 665, valve 691, line 663, substrate support 100, line 664, valve 692, line 675, and back to the recirculator 620. At the same time, fluid from the online unit 630 circulates through lines 667, 668 and valve 693; fluid from the recirculator 610 circulates through lines 661, 662, 666 and valves 693 and 691; and fluid from the online unit 640 circulates through lines 671, 672 and valve 694.
Between times t5 and t6, fluid at Tpc flows from the recirculator 610, sequentially through line 661, valve 693, line 668, online unit 630, line 667, valve 693, line 662, valve 691, line 663, substrate support 100, line 664, valve 692, line 665, valve 691, line 666, and back to the recirculator 610. At the same time, fluid from the recirculator 620 circulates through lines 673, 674, 675 and valves 694 and 692; and fluid from the online unit 640 circulates through lines 671, 672 and valve 694. After time t6, the flow pattern is the same as that before time t3.
The embodiment shown in FIG. 6E has an advantage in that fluid in the entire circulation system flows at all times (i.e. without dead volume) and its temperatures can be individually regulated by the recirculators 610, 620 and online units 630, 640.
FIG. 6F shows an implementation wherein one online unit 6630 is used to provide fluid at T1 or Tpc another online unit 6640 is used to provide fluid at T2 or Tph. Circulation pumps 6610 and 6620 drive fluid through the substrate support 100 and the online units 6630 and 6640. A controller 6690 actuates valves 6661 and 6662 to direct fluid from the online units 6630 and 6640 through the substrate support 100, set fluid temperature from the online unit 6630 to T1 or Tpc, and set fluid temperature from the online unit 6640 to T2 or Tph. The valve 6661 is operable to direct fluid passing through line 6611 from the circulation pump 6610 to pass through the online unit 6630, through line 6612, valve 6661, line 6613, substrate support 100, line 6614, valve 6662, line 6615 and back to circulation pump 6610. The valve 6662 is operable to direct fluid passing through line 6616 from the circulation pump 6620 to pass through the online unit 6640 through line 6617, valve 6661, line 6613, substrate support 100, line 6614, valve 6662, line 6618 and back to circulation pump 6620. Valves 6661 and 6662 cooperatively direct fluid from one of the online units 6630 and 6640, into the substrate support 100. FIG. 6F is a simplified diagram showing logic connections between the circulation pump, online units and the substrate support 100, without showing all details of implementation.
FIG. 8 shows an embodiment wherein two three-way switching valves 971-972 cooperatively direct fluid from one of recirculators 910 and 920 into the substrate support 100 and two three-way switching valves 973 and 974 set temperature of the fluid from the recirculators 910 and 920.
Referring to FIG. 4 and FIG. 8, before time t3, fluid at T1 flows from the recirculator 910, sequentially through line 921, thermal mass 950, line 922, valve 971, line 923, substrate support 100, line 924, valve 972, line 925, and back to the recirculator 910; at the same time, fluid at Tpc flows from a pre-cooling unit 930, sequentially through line 951, valve 973, line 957 and back to the pre-cooling unit 930 so as to bypass thermal mass 950; the fluid from the recirculator 910 passing through thermal mass 950 is not heated or cooled but instead remains at T1; fluid at Tph flows from the pre-heating unit 940, sequentially through line 952, valve 974, line 954, thermal mass 960, line 956 and back to the pre-heating unit 940; the fluid from the pre-heating unit 940 and the thermal mass 960 are in thermal equilibrium at Tph; fluid at T2 flows from the recirculator 920, sequentially through line 931, line 935, valve 978, line 929 and back to the recirculator 920 to bypass the thermal mass 960.
Between times t3 and t4, fluid at T1 flows from the recirculator 910, sequentially through line 921, line 934, valve 977, line 925, and back to the recirculator 910; at the same time, fluid at Tpc flows from a pre-cooling unit 930, sequentially through line 951, valve 973, line 953, thermal mass 950, line 955 and back to the pre-cooling unit 930; the thermal mass 950 reaches thermal equilibrium with the fluid from the pre-cooling unit 930 at Tpc before t5; fluid at Tph flows from the pre-heating unit 940, sequentially through line 952, valve 974, line 954, thermal mass 960, line 956 and back to the pre-heating unit 940; the fluid from the pre-heating unit 940 and the thermal mass 960 are in thermal equilibrium at Tph; fluid at T2 flows from the recirculator 920, sequentially through line 931, thermal mass 960 such that the fluid from the recirculator 920 is heated from T2 to Tph, line 971, valve 971, line 923, substrate support 100, line 924, valve 972, line 929, and back to the recirculator 920.
Between times t4 and t5, fluid at T1 flows from the recirculator 910, sequentially through line 921, line 934, valve 977, line 925, and back to the recirculator 910; fluid at Tpc flows from the pre-cooling unit 930, sequentially through line 951, valve 973, line 953, thermal mass 950, line 955 and back to the pre-cooling unit 930; the thermal mass 950 reaches thermal equilibrium with the fluid from the pre-cooling unit 930 at Tpc before t5; at the same time, fluid at Tph flows from the pre-heating unit 940, sequentially through line 952, valve 974, line 958, and back to the pre-heating unit 940; fluid at T2 flows from the recirculator 920, sequentially through line 931, thermal mass 960, line 971, valve 971, line 923, substrate support 100, line 924, valve 972, line 929, and back to the recirculator 920; the fluid from the recirculator 920 and the thermal mass 960 are in thermal equilibrium at T2.
Between times t5 and t6, fluid at T1 flows from the recirculator 910, sequentially through line 921, thermal mass 950 such that the fluid from the recirculator 910 is cooled from T1 to Tpc, line 922, valve 971, line 923, substrate support 100, line 924, valve 972, line 925, and back to the recirculator 910; at the same time, fluid at Tpc flows from a pre-cooling unit 930, sequentially through line 951, valve 973, line 953, thermal mass 950, line 955 and back to the pre-cooling unit 930; the fluid from a pre-cooling unit 930 and the thermal mass 950 are in thermal equilibrium at Tpc; fluid at Tph flows from the pre-heating unit 940, sequentially through line 952, valve 974, line 954, thermal mass 960, line 956 and back to the pre-heating unit 940; the thermal mass 960 reaches thermal equilibrium with the fluid from the pre-heating unit 940 at Tph before the substrate support 100 is heated; fluid at T2 flows from the recirculator 920, sequentially through line 931, line 935, valve 978, line 929, and back to the recirculator 920.
After time t6, the flow pattern is the same as that before time t3.
Two-way valves 977 and 978 located along branch lines 934 and 935 which are connected between inlets and outlets of the recirculators 910 and 920, respectively. A controller 996 actuates valves 971-974 and 977-978. The liquid from the pre-cooling unit 930 does not intermix with the liquid from the recirculator 910; the liquid from the recirculator 940 does not intermix with the liquid from the recirculator 920.
The circulation system can be used to direct liquids through a flow passage covering the entire substrate support or through a flow passage covering a zone of the substrate support.
The circulation system comprising the valves and flow lines can further comprise a suitable logic control unit and suitable actuation mechanisms for automatically controlling and actuating the valves according to preprogrammed process recipes and/or in response to process monitoring systems.
The circulation system described herein can be used with any semiconductor processing apparatuses wherein it is desired to effect rapid temperature of a substrate support needs rapid switching, e.g. a plasma etcher or a chemical vapor deposition system. Examples of such apparatuses and processes can be found in commonly assigned U.S. Pat. Nos. 7,274,004, 6,847,014, 6,770,852, the disclosures of which is incorporated by reference in their entirety.
An exemplary circulation system according to an embodiment has a cooling capacity of 4000 W with recirculators capable of providing liquids from −10 to 90° C. at 18 L/min at a pressure up to 100 psi. In an exemplary process, T2 is greater than T1 by at least 50° C. T1 and T2 are from 10 to 75° C. The substrate support can have a heat capacity of 5000 J/° C. and Δth and Δtc can be at least four times the difference between T1 and T2 in ° C. FIG. 9 shows representative temperature data for an exemplary multistep process. An exemplary multistep process can comprise applying an RF bias to a semiconductor substrate by supplying radio frequency power to the substrate support, energizing process gas into a plasma state and plasma etching openings into a layer of material on the semiconductor substrate, the opening being etched for a first time period Δtc while supplying liquid at T1 to the flow passage and for a second timer period Δth while supplying liquid at T2 to the flow passage.
While the temperature control system for a substrate support has been described in detail with reference to specific embodiments thereof, it will be apparent to those skilled in the art that various changes and modifications can be made, and equivalents employed, without departing from the scope of the appended claims. The temperature control system described herein is not limited to plasma processing systems, but can be used in any suitable apparatus wherein a substrate support is incorporated.

## Claims

1. A plasma processing system including a recirculation system useful for supplying temperature controlled liquid to a substrate support on which a semiconductor substrate subject to a multistep process is supported during processing in a semiconductor processing chamber, the system comprising:
a supply line adapted to deliver liquid to an inlet of the substrate support, the substrate support including a flow passage through which the liquid is circulated for purposes of maintaining a thermal zone on a surface of the substrate support at a desired temperature;
a return line adapted to return liquid from an outlet of the substrate support after the liquid is circulated through the flow passage;
a first recirculator operable to supply liquid at temperature T1 to the supply line and receive liquid from the return line, the first recirculator being in fluid communication with the supply line and the return line;
a second recirculator operable to supply liquid at temperature T2 to the supply line and receive liquid from the return line, the second recirculator in fluid communication with the supply line and the return line, wherein temperature T2 is at least 10° C. above temperature T1;
a pre-cooling unit operable to supply liquid at temperature Tpc to the supply line, wherein temperature Tpc is at least 10° C. below T1;
a pre-heating unit operable to supply liquid at temperature Tph to the supply line, wherein temperature Tph is at least 10° C. above T2;
electronically actuated valves operable to supply liquid at T1, T2, Tpc or Tph to the supply line by connecting the first recirculator or the second recirculator to the supply and return lines or circulating liquid in or through the pre-cooling unit and the pre-heating unit.

2. The system of claim 1, further comprising a controller operable to direct liquid at Tpc for a time period Δtpc through the supply line and the return line, immediately prior to directing liquid at T1 for a time period Δtc through the supply line and the return line, so as to maintain a thermal zone of the substrate support at temperature T1 for the time period Δtc during a portion of the multistep process, wherein Δtpc is a fraction of Δtc.

3. The system of claim 2, wherein the controller is operable to direct liquid at Tph for a time period Δtph through the supply line and the return line, immediately prior to directing liquid at T2 for a time period Δth through the supply line and the return line, so as to maintain the thermal zone of the substrate support at temperature T2 for the time period Δth during a portion of the multistep process, wherein Δtph is a fraction of Δth.

4. The system of claim 3, wherein:
the supply line is connected to a first valve;
the return line is connected to a second valve;
the first valve is in fluid communication with an outlet of the first recirculator, an outlet of the pre-cooling unit, an outlet of the second recirculator, and an outlet of the pre-heating unit;
the second valve is in fluid communication with an inlet of the first recirculator, an inlet of the pre-cooling unit, an inlet of the second recirculator, and an inlet of the pre-heating unit;
the controller is operable to selectively operate the first and second valves to direct liquid at temperature T1, T2, Tpc or Tph through the supply line and the return line.

5. The system of claim 4, wherein:
the first valve is connected to the inlet of the first recirculator, the inlet of the second recirculator, the inlet of the pre-heating unit and the inlet of the pre-cooling unit;
the second valve is connected to the outlet of the first recirculator, the outlet of the second recirculator, the outlet of the pre-heating unit and the outlet of the pre-cooling unit.

6. The system of claim 4, wherein:
the first valve is a first three-way switching valve;
the second valve is a second three-way switching valve;
the first three-way switching valve is connected to a third three-way switching valve and a fourth three-way switching valve;
the second three-way switching valve is connected to a fifth three-way switching valve and a six three-way switching valve;
the third three-way switching valve is connected to the outlet of the pre-cooling unit, and the outlet of the first recirculator;
the fifth three-way switching valve is connected to the inlet of the pre-cooling unit, and the inlet of the first recirculator;
the fourth three-way switching valve is connected to the outlet of the pre-heating unit, and the outlet of the second recirculator;
the sixth three-way switching valve is connected to the inlet of the pre-heating unit, and the inlet of the second recirculator;
a first valved branch line is connected to the outlet and the inlet of the pre-cooling unit;
a second valved branch line is connected to the outlet and the inlet of the pre-heating unit;
a third valved branch line is connected to the outlet and the inlet of the first recirculator;
a fourth valved branch line is connected to the outlet and the inlet of the second recirculator;
the controller is operable to selectively operate valves of the first, second, third and fourth valved branch lines and the first, second, third, fourth, fifth and sixth three-way switching valves to direct liquid at temperature T1, T2, Tpc or Tph through the supply line and the return line.

7. The system of claim 4, wherein:
the first valve is a first four-way crossover valve;
the second valve is a second four-way crossover valve;
the first four-way crossover valve is connected to the second four-way crossover valve, a third four-way crossover valve, and a fifth four-way crossover valve;
the second four-way crossover valve is connected to a fourth four-way crossover valve, and a sixth four-way crossover valve;
the third four-way crossover valve is connected to the fifth four-way crossover valve, the outlet of the pre-cooling unit and the outlet of the first recirculator;
the fifth four-way crossover valve is connected to the inlet of the pre-cooling unit and the inlet of the second recirculator;
the fourth four-way crossover valve is connected to the sixth four-way crossover valve, the inlet of the pre-heating unit and the inlet of the second recirculator;
the sixth four-way crossover valve is connected to the outlet of the pre-heating unit and the outlet of the second recirculator;
the controller is operable to selectively operate the first, second, third, fourth, fifth and sixth four-way crossover valves to direct liquid at temperature T1, T2, Tpc or Tph through the supply line and the return line.

8. The system of claim 4, wherein:
the first valve is a first three-way switching valve;
the second valve is a second three-way switching valve;
the first three-way switching valve is connected to the outlet of the pre-cooling unit, a third three-way switching valve, the outlet of the pre-heating unit and a fourth three-way switching valve;
the second three-way switching valve is connected to the inlet of the first recirculator and the inlet of the second recirculator;
the third three-way switching valve is connected to the inlet and outlet of the pre-cooling unit and the outlet of the first recirculator;
the fourth three-way switching valve is connected to the inlet and outlet of the pre-heating unit and the outlet of the second recirculator;
the controller is operable to selectively operate the first, second, third, and fourth three-way switching valves to direct liquid at temperature T1, T2, Tpc or Tph through the supply line and the return line.

9. The system of claim 4, wherein:
the first valve is a first three-way switching valve;
the second valve is a second three-way switching valve;
the first three-way switching valve is connected to a third three-way switching valve and a fourth three-way switching valve;
the second three-way switching valve is connected to the inlet of the first recirculator and the inlet of the second recirculator;
the third three-way switching valve is connected to the outlet of the pre-cooling unit and the outlet of the first recirculator;
the fourth three-way switching valve is connected to the outlet of the pre-heating unit and the outlet of the second recirculator;
a first two-way valve is connected to the inlet of the pre-cooling unit and the outlet of the first recirculator;
a second two-way valve is connected to the inlet of the pre-heating unit and the outlet of the second recirculator;
a first valved branch line is connected to the outlet and the inlet of the first recirculator;
a second valved branch line is connected to the outlet and the inlet of the second recirculator;
the controller is operable to selectively operate the first, second, third, and fourth three-way switching valves, the first and second two-way valves and the valves of the first and second valved branch lines to direct liquid at temperature T1, T2, Tpc or Tph through the supply line and the return line.

10. The system of claim 4, wherein:
the first valve is a first three-way switching valve;
the second valve is a second three-way switching valve;
the first three-way switching valve is connected to a third three-way switching valve, and a fourth three-way switching valve;
the second three-way switching valve is connected to the inlet of the first recirculator and the inlet of the second recirculator;
the third three-way switching valve is connected to the outlet of the pre-cooling unit and a fifth three-way switching valve;
the fifth three-way switching valve is connected to the inlet of the pre-cooling unit and the outlet of the first recirculator;
the fourth three-way switching valve is connected to the outlet of the pre-heating unit and a sixth three-way switching valve;
the sixth three-way switching valve is connected to the inlet of the pre-heating unit and the outlet of the second recirculator;
an optional first valved branch line is connected to the outlet and the inlet of the pre-cooling unit;
an optional valved branch line is connected to the outlet and the inlet of the pre-heating unit;
a third valved branch line is connected to the outlet and the inlet of the first recirculator;
a fourth valved branch line is connected to the outlet and the inlet of the second recirculator;
the controller is operable to selectively operate the first, second, third, fourth, fifth and sixth three-way switching valves, and the valves of the valved branch lines to direct liquid at temperature T1, T2, Tpc or Tph through the supply line and the return line.

11. The system of claim 4, wherein:
the first valve is a first four-way crossover valve;
the second valve is a second four-way crossover valve;
the first four-way crossover valve is connected to the second four-way crossover valve, a third four-way crossover valve, and the inlet of the first recirculator;
the second four-way crossover valve is connected to a fourth four-way crossover valve, and the inlet of the second recirculator;
the third four-way crossover valve is connected to the inlet and the outlet of the pre-cooling unit and the outlet of the first recirculator;
the fourth four-way crossover valve is connected to the inlet and outlet of the pre-heating unit and the outlet of the second recirculator;
the controller is operable to selectively operate the first, second, third, and fourth four-way crossover valves to direct liquid at temperature T1, T2, Tpc or Tph through the supply line and the return line.

12. The system of claim 3, wherein:
the supply line is connected to a first valve;
the return line is connected to a second valve;
the first valve is in fluid communication with an outlet of the first recirculator and an outlet of the second recirculator; the first valve is not in fluid communication with the pre-heating unit or the pre-cooling unit;
the second valve is in fluid communication with an inlet of the first recirculator and an inlet of the second recirculator; the second valve is not in fluid communication with the pre-heating unit or the pre-cooling unit;
the pre-cooling unit provides liquid at temperature Tpc by passing a liquid at temperature Tpc through a first thermal mass which cools the liquid at temperature T1 provided by the first recirculator to Tpc when the liquid at temperature T1 flows through the first thermal mass; the liquid at temperature Tpc from the pre-cooling unit and the liquid at temperature T1 from the first recirculator do not intermix;
the pre-heating unit provides liquid at temperature Tph by passing a liquid at temperature Tph through a second thermal mass which heats the liquid at temperature T2 provided by the second recirculator to Tph when the liquid at temperature T2 flows through the second thermal mass; the liquid at temperature Tph from the pre-heating unit and the liquid at temperature T2 from the second recirculator do not intermix;
the controller is operable to selectively operate the first and second valves to direct liquid at temperature T1 T2, Tpc or Tph through the supply line and the return line.

13. The system of claim 1, wherein the substrate support does not include a heater,
a controller is operable to actuate valves of the recirculation system such that during a multistep process in the chamber the substrate support is maintained at temperature T1 for a time period Δtc during one step and at temperature T2 for a time period Δth during another step of the multistep process,
the controller being further operable to actuate valves of the recirculation system such that liquid at Tph is supplied to the flow passage immediately prior to supplying liquid at T2 and liquid at Tpc is supplied to the flow passage immediately prior to supplying liquid at T1 to the flow passage.

14. A method of operating a recirculation system to control temperature of a substrate support on which a semiconductor substrate is subjected to a multistep process in a semiconductor processing chamber, the method comprising;
supporting a semiconductor substrate on the substrate support wherein temperature of a thermal zone on the substrate support is controlled by circulating liquid in a flow passage in the substrate support, the substrate support including an inlet and an outlet in fluid communication with the flow passage, a supply line in fluid communication with the inlet, and a return line in fluid communication with the outlet;
supplying liquid at temperature T1 to the flow passage, the liquid at temperature T1 being supplied by a first recirculator in fluid communication with the supply line and the return line;
supplying liquid at temperature T2 to the flow passage, the liquid at temperature T2 being supplied by a second recirculator in fluid communication with the supply line and the return line, temperature T2 being at least 10° C. above temperature T1;
supplying liquid at temperature Tpc to the flow passage, temperature Tpc being at least 10° C. below T1;
supplying liquid at temperature Tph to the flow passage, temperature Tph being at least 10° C. above T2;
the liquid at temperature Tpc being supplied immediately prior to supplying the liquid at temperature T1;
the liquid at temperature Tph being supplied immediately prior to supplying the liquid at temperature T2.

15. The method of claim 14, wherein liquid at Tpc or liquid at temperature Tph is circulated such that temperature of the thermal zone of the substrate support changes at an initial rate of at least 1° C./s while liquid at temperature Tpc or liquid at temperature Tph is supplied to the flow passage.

16. The method of claim 14, wherein liquid at Tpc or liquid at temperature Tph is circulated such that temperature of the thermal zone does not overshoot temperature T1 or temperature T2.

17. The method of claim 14, wherein a controller operates valves in the recirculation system to supply liquid at Tpc for a time period Δtpc, immediately prior to supplying liquid at T1, so as to rapidly effect temperature change and maintain the thermal zone at temperature T1 for the time period Δtc during a portion of the multistep process; and/or the controller operates valves in the recirculation system to supply liquid at Tph for a time period Δtph, immediately prior to supplying liquid at T2, so as to rapidly effect temperature change and maintain the thermal zone at temperature T2 for the time period Δth during a portion of the multistep process; wherein Δtpc is a fraction of Δtc and Δtph is a fraction of Δth.

18. The method of claim 16, wherein the controller operates the valves to switch from supplying liquid at Tpc to supplying liquid at T1, when the temperature of the thermal zone is within 2° C. to T1; and/or the controller operates the valves to switch from supplying liquid at Tph to supplying liquid at T2, when the temperature of the thermal zone is within 2° C. to T2.

19. The method of claim 17, wherein:
the supply line is connected to a first valve;
the return line is connected to a second valve;
the first valve is in fluid communication with an outlet of the first recirculator, an outlet of a pre-cooling unit providing liquid at temperature Tpc, an outlet of the second recirculator, and an outlet of a pre-heating unit providing liquid at temperature Tph;
the second valve is in fluid communication with an inlet of the first recirculator, an inlet of the pre-cooling unit, an inlet of the second recirculator, and an inlet of the pre-heating unit;
the method including selectively operating the first and second valves to direct liquid at temperature T1, T2, Tpc or Tph to the flow passage.

20. The method of claim 14, wherein:
the supply line is connected to a first valve;
the return line is connected to a second valve;
the first valve is in fluid communication with an outlet of the first recirculator and an outlet of the second recirculator; the first valve is not in fluid communication with a pre-cooling unit;
the second valve is in fluid communication with an inlet of the first recirculator and an inlet of the second recirculator; the second valve is not in fluid communication with a pre-heating unit;
the pre-cooling unit provides liquid at temperature Tpc by passing a liquid at temperature Tpc through a first thermal mass which cools the liquid at temperature T1 provided by the first recirculator to Tpc when the liquid at temperature T1 flows through the first thermal mass; the liquid at temperature Tpc from the pre-cooling unit and the liquid at temperature T1 from the first recirculator do not intermix;
the pre-heating unit provides liquid at temperature Tph by passing a liquid at temperature Tph through a second thermal mass which heats the liquid at temperature T2 provided by the second recirculator to Tph when the liquid at temperature T2 flows through the second thermal mass; the liquid at temperature Tph from the pre-heating unit and the liquid at temperature T2 from the second recirculator do not intermix;
the method including selectively operate the first and second valves to direct liquid at temperature T1, T2, Tpc or Tph to the flow passage.

21. The method of claim 14, wherein:
the supply line is connected to a first valve;
the return line is connected to a second valve;
the first valve is in fluid communication with an outlet of the first recirculator and an outlet of the second recirculator; the first valve is not in fluid communication with a pre-cooling unit;
the second valve is in fluid communication with an inlet of the first recirculator and an inlet of the second recirculator; the second valve is not in fluid communication with a pre-heating unit;
the pre-cooling unit provides liquid at temperature Tpc by passing a liquid at temperature Tpc through a first thermal mass which cools the liquid at temperature T1 provided by the first recirculator to Tpc when the liquid at temperature T1 flows through the first thermal mass; the liquid at temperature Tpc from the pre-cooling unit and the liquid at temperature T1 from the first recirculator do not intermix;
the pre-heating unit provides liquid at temperature Tph by passing a liquid at temperature Tph through a second thermal mass which heats the liquid at temperature T2 provided by the second recirculator to Tph when the liquid at temperature T2 flows through the second thermal mass; the liquid at temperature Tph from the pre-heating unit and the liquid at temperature T2 from the second recirculator do not intermix;
the method including selectively operating the first and second valves to direct liquid at temperature T1, T2, Tpc or Tph to the flow passage.

22. The method of claim 14, further comprising applying an RF bias to the semiconductor substrate by supplying radio frequency power to the substrate support, energizing process gas into a plasma state and plasma etching openings into a layer of material on the semiconductor substrate, the openings being etched for a first time period Δtc while supplying liquid at T1 to the flow passage and for a second time period Δth while supplying liquid at T2 to the flow passage.

23. The method of claim 14, wherein the substrate support does not include an electrical heater; Δth is from 50 to 200 seconds; Δtc is from 50 to 200 seconds; T1 is from −10° C. to 50° C.; and T2 is from 30° C. to 110° C.

24. The method of claim 21, wherein the substrate support does not include an electrical heater and the substrate support applies an RF bias to the semiconductor substrate; Δth is 50 to 200 seconds, Δtc is from 50 to 200 seconds; T1 is from −10° C. to 50° C.; and T2 is from 30° C. to 110° C.