# Patent

## Title
Systems and methods for driving high power states using lower voltage processes

## Abstract

A battery assisted level shifter comprises a pull up transistor pulling up an output when a received input signal is high, a pull down transistor pulling down the output when the received input signal is low, and a battery element to provide voltage offsets. The battery element can be implemented using one or more pull-up transistors for assisting with pulling up the output. The level shifter can be used in class-D amplifiers, DC-DC power converters and interfaces between circuits having different reference voltages.

## Background
RELATED APPLICATIONS
This application is a continuation-in-part of and claims priority to U.S. application Ser. No. 12/390,333, filed Feb. 20, 2009, which is hereby incorporated by reference for all purposes.


FIELD OF THE INVENTION
The disclosure relates generally to semiconductor circuits and specifically to systems and methods for driving high power states using lower voltage processes.
BACKGROUND OF THE INVENTION
Level shifters receive a signal relative to a low supply voltage and a high supply voltage and produces an output signal similar to the received signal except that the output signal is relative to a second low supply voltage and a second high supply voltage. For example, a level shifter can receive a digital signal which swings between 0V and 3.3V and produce a digital output signal with the same high and low values except that the high value is 5V and the low value is 1.7V.
Level shifters can be employed in a wide variety of applications. They are used in class-D amplifier by amplifying the swing of a square wave form. They can be used in DC-DC power converters. Also, they can be used in interface circuits between different circuits which use different high or low reference voltages.
SUMMARY OF THE INVENTION
A battery assisted level shifter circuit comprising a pull-up transistor (for example a p-type field effect transistor (PFET)) coupled to a pull-down transistor (for example an n-type field effect transistor (NFET)) and a battery element which maintains the voltage substantially equal to the difference between the high supply voltage and the low supply voltage plus a target swing voltage.
In one exemplary embodiment, the battery element can be inserted between the low supply rail and the pull-down transistor resulting in an output swing between the high supply voltage and the high supply voltage minus the target swing voltage. In this embodiment, the battery element can comprise a battery transistor such as an NFET, a bias network operable to bias the battery transistor and a clamping transistor such as an NFET which insures the positive terminal of the battery element does not fall below the battery voltage plus the low supply voltage, or other suitable battery elements. For example, the clamping voltage supplied to the clamping transistor can be set to the high supply voltage minus the target swing voltage plus the threshold voltage of the clamping transistor, or other suitable configurations can be used.
In another exemplary embodiment, the battery element can be inserted between the high supply rail and the pull-up transistor resulting in an output swing between the low supply voltage and the low supply voltage plus the target swing voltage. In this embodiment, the battery element can comprise a battery transistor such as an NEST, a bias network operable to bias the battery transistor and a clamping transistor such as a PFET which insures the negative terminal of the battery element does not rise above the difference between the high supply voltage and the battery voltage, or other suitable battery elements. For example, the clamping voltage supplied to the clamping transistor can be set to the low supply voltage plus the target swing voltage minus the threshold voltage of the clamping transistor, or other suitable configurations can be used.
In the previously mentioned embodiments, the bias network can comprise an RC circuit, a current source transistor (such as an NFET), a bias resistor coupled to the current source transistor and the low supply rail and a voltage supply coupled to the high supply rail where the voltage supply maintains the swing voltage and coupled to the current source transistor, or other suitable circuits or devices. The bias network causes the battery transistor to maintain a voltage equal to the sum of the target swing voltage and the difference between the high supply voltage and the low supply voltage.
An exemplary method includes driving an output based on an input signal by pulling up the output to a high supply rail when the input signal is high and pulling down the output to a positive terminal of a battery element when the input signal is low, such as where the positive terminal has a voltage substantially equal to a battery voltage plus a low supply voltage. The battery voltage across the battery element is maintained at a value that is substantially equal to the high supply voltage minus the low supply voltage and a target swing voltage. In one exemplary embodiment, the battery voltage is maintained by biasing a battery transistor, and clamping a positive terminal of the battery element to a voltage substantially equal to the high supply voltage minus the target swing voltage when the input signal goes low.
Another exemplary method includes driving an output based on an input signal by pulling down the output to a low supply rail when the input signal is law and pulling up the output to a negative terminal of a battery element when the input signal is low, such as where the negative terminal has a voltage substantially equal to a high supply voltage minus a battery voltage. The battery voltage across the battery element is maintained at a value that is substantially equal to the high supply voltage minus the low supply voltage and a target swing voltage. In one exemplary embodiment, the battery voltage is maintained by performed by biasing a battery transistor and clamping the negative terminal of the battery element to a voltage substantially equal the low supply voltage plus the target swing voltage to when the input signal goes high.
Other systems, methods, features, and advantages of the present disclosure will be or become apparent to one with skill in the art upon examination of the following drawings and detailed description. It is intended that all such additional systems, methods, features, and advantages be included within this description, be within the scope of the present disclosure, and be protected by the accompanying claims.



BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS
Many aspects of the disclosure can be better understood with reference to the following drawings. The components in the drawings are not necessarily to scale, emphasis instead being placed upon clearly illustrating the principles of the present disclosure. Moreover, in the drawings, like reference numerals designate corresponding parts throughout the several views.
FIG. 1 is a block diagram showing a system comprising an exemplary embodiment of a battery-assisted level shifter;
FIG. 2 is a block diagram showing a system comprising another exemplary embodiment of a battery-assisted level shifter;
FIG. 3 is a block diagram of an exemplary embodiment of a class-D amplifier utilizing a battery-assisted level shifter;
FIG. 4 illustrates an output stage of an exemplary power driver;
FIG. 5 is a circuit diagram of an exemplary embodiment of a battery assisted level-shifter;
FIG. 6 is a circuit diagram of an exemplary embodiment of a battery assisted level shifter with an embodiment of a battery element shown in greater detail;
FIG. 7 is a circuit diagram of an exemplary embodiment of a bias network;
FIG. 8 is a circuit diagram of another exemplary embodiment of a battery assisted level-shifter;
FIG. 9 is a circuit diagram of an exemplary embodiment of a battery assisted level shifter with an exemplary embodiment of battery element shown in greater detail;
FIG. 10 shows an exemplary embodiment of a battery assisted level shifter;
FIG. 11 shows another exemplary embodiment of a battery assisted level shifter;
FIG. 12 shows yet another exemplary embodiment of a battery assisted level shifter;
FIG. 13 shows still another exemplary embodiment of a battery assisted level shifter; and
FIG. 14 is a diagram illustrating exemplary signaling used in controlling a battery assisted level shifter.



DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
In the description that follows, like parts are marked throughout the specification and drawings with the same reference numerals, respectively. The drawing figures might not be to scale and certain components can be shown in generalized or schematic form and identified by commercial designations in the interest of clarity and conciseness.
A detailed description of embodiments of the present disclosure is presented below. While the disclosure will be described in connection with these drawings, there is no intent to limit it to the embodiment or embodiments disclosed herein. On the contrary, the intent is to cover all alternatives, modifications and equivalents included within the spirit and scope of the disclosure as defined by the appended claims.
Battery assisted level shifters can be used in a wide variety of applications, including class-D amplifiers, DC-DC power conversion and interfacing between circuits using different voltage tolerances or different reference voltages.
FIG. 1 is a block diagram showing a system comprising an exemplary embodiment of a battery-assisted level shifter of a first type. Battery assisted level shifter 102 receives a first signal from circuit 104 that swings from VSS to VDD. Battery assisted level shifter 102 generates a second signal that is provided to circuit 106, where the second signal is essentially the same as the input signal except that an offset of Voffset is added to the output signal. The result is an output signal which swings from VSS+Voffset to VDD+Voffset.
FIG. 2 is a block diagram showing a system comprising an exemplary embodiment of a battery assisted level shifter of a second type. Battery assisted level shifter 202 receives a first signal from circuit 204 that swings from VSS1 to VDD1. Battery assisted level shifter 202 generates a second signal that is provided to circuit 206, where the second signal is essentially the same as the first signal except the output signal swings from VSS2 to VDD2. Though VDD1 and VDD2 can be different values, quite often VSS1 and VSS2 are the same and tied to ground. In such a circumstance, battery assisted level shifter 202 amplifies or attenuates the voltage of the input signal by a fixed factor. As illustrated in the following examples, level shifters of the first type can be used to construct a level shifter of the second type.
FIG. 3 is a block diagram of an exemplary embodiment of a class-D amplifier that utilizes a battery-assisted level shifter. Optionally, class D-amplifier 300 receives an analog input signal that is converted to pulses using modulator 302. Most commonly in analog operations, modulator 302 is either a pulse width modulator or a pulse density modulator. A common implementation of a pulse width modulator uses a high speed comparator to compare the input signal against a triangle wave. In digital audio applications, a digital audio signal is received and is converted into a pulse width signal or a pulse density signal by a digital signal processor, thus avoiding the need for analog circuitry prior to amplification.
The modulated signal is then amplified by battery assisted level shifter 304 and finally demodulated by low pass filter 306. The demodulated signal can then be used, for example, by speaker 308. In particular, battery assisted level shifter 304 can be implemented with a battery assisted level shifter such as battery assisted level shifter 202.
FIG. 4 illustrates an output stage of an exemplary power driver 400, as previously disclosed in U.S. patent application Ser. No. 12/390,333, entitled “Systems and Methods for Driving High Power Stages Using Lower Voltage Processes,” filed on Feb. 20, 2009 which is incorporated by reference herein for all purposes. FIG. 4 illustrates an output stage of a power driver. Integrated power drivers such as Class-D amplifiers as described above and DC-DC converters are the output stages which typically use a complementary MOS structure. Output stage 400 comprises a high-side switch (shown as p-type field effect transistor (PFET) 402), a low-side switch (shown as n-type field effect transistor (NFET) 404) and battery assisted level shifter 406. When high-side switch 402 is in the ON state and NFET 404 is in the OFF state, the output voltage is pulled up to the VDDH level. When high-side switch 402 is in the OFF state and the NFET 404 is in the ON state, the output voltage is pulled down to the VSSH level. As is typical with PFET switches, the PFET is in the ON state when the gate voltage is at least one PFET threshold below its source and is OFF when the gate-to-source voltage is zero. Similarly, as is typically the case with NFET switches, the NFET is in the ON state when the gate voltage is at least one NFET threshold above its source and is OFF when the gate-to-source voltage is zero.
The output voltage swing produced by a class-D amplifier depends on the requirements imposed by the end product. For example, in PC audio applications speaker drivers are rated to produce an average power of 2.5 W on a 4-Ω speaker, a 5V swing can be used to allow the class-D amplifier to generate 2.5 W. Alternatively, many advanced integration technologies use 0.35 μm or smaller geometries, which constrains the voltage withstand of the FET devices to 3.3V. In order to meet this voltage withstand level when the source of high-side switch 402 is tied to the power rail VDDH, the control signal supplied to the gate of high-side switch 402 can only be allowed to drop 3.3V below VDDH. For the case where VDDH is set to 5V, the gate cannot go below 1.7V. Similarly, the control signal supplied to the gate of low-side switch 404 can only be allowed to go 3.3V above VSSH for the case where VSSH is set to ground (0V).
In FIG. 4, battery assisted level shifter 406 is used to shift a modulated signal so that the swing between the power supply voltage VDDH and the gate of high-side switch 402 never exceeds 3.3V. Additionally, battery assisted level shifter 406 can also be used to supply the gate voltage to low-side switch 404 such that the swing between the gate and power supply voltage VSSH never exceeds 3.3V. However, the original modulated signal can also be supplied directly to low-side switch 404.
FIG. 5 is a circuit diagram of an exemplary embodiment of a battery assisted level-shifter. Battery assisted level shifter 500 comprises a pull-up transistor (shown as PFET 502), a pull-down transistor (shown as NFET 506) and battery element 504. The source of PFET 502 is coupled to the drain of NFET 506, and the gates of PFET 502 and NFET 506 are coupled together. Battery element 504 has a positive terminal coupled to the source of NFET 506 and a negative terminal coupled to the low supply rail. A single gate signal can be provided to PFET 502 and NFET 506 to allow PFET 502 and NFET 506 to alternate on/off states.
When PFET 502 is switched ON and NFET 506 is switched OFF, output voltage VOUT is pulled up to the voltage supplied by the high supply rail, which has a high supply voltage denoted by VDDH. When NFET 506 is switched ON and PFET 502 is switched OFF, output voltage VOUT pulled down to the voltage supplied by the low supply rail plus the voltage across battery element 504, denoted by VBAT. Here, the low supply voltage is denoted by VSSH and is sometimes set to the ground potential. Battery element 504 maintains its voltage VBAT across its two terminals regardless of the current that is drawn through it under design operating conditions. If battery assisted level shifter 500 is used in output stage 400 described above, the voltage across battery element 504 can be selected to maximize the swing of the output VOUT. The voltage VOUT is supplied to high-side switch 402, which swings between VDDH and VSSH+VBAT. A nominal choice of 1.7V for VBAT optimizes the voltage swing across high side switch 402 switches to 3.3V for the case of VDDH=5.0V and VSSH=0.0V.
FIG. 6 is a circuit diagram of an exemplary embodiment of battery assisted level shifter 500 with an embodiment of battery element 504 shown in greater detail. In this embodiment, battery element 504 comprises a battery transistor (shown as NFET 602), bias network 604 and a clamping transistor (shown as NFET 606). Bias network 604 provides a voltage of VBAT−Vthn between the drain and gate of NFET 602, where Vthn is the threshold of NFET 602. When NFET 602 has a drain-to-source voltage greater than VBAT, NFET 602 turns ON. When NFET 602 has a drain-to-source voltage less than VBAT, NFET 602 turns OFF. These two factors cause NFET 602 to maintain a drain-to-source voltage of VBAT.
Clamping NFET 606 is connected between VDDH and Vgn and is designed to turn on when Vgn drops below the target voltage VDDH−Vswing, and thus prevents VBAT from dropping further below the target voltage. This operation is achieved by setting clamping voltage Vclamp-N=VDDH−Vswing+Vthn.
When the control signal received by NFET 506 and PFET 502 transitions from low to high, NFET 506 turns ON and at the same time PFET 502 turns OFF. NFET 506 pulls down the voltage VOUT towards VBAT. This initially causes the voltage across NFET 602 to exceed VBAT, so NFET 602 turns ON and pulls down the voltage Vgn. Similarly, when the control signal received by NFET 506 and PFET 502 transitions from high to low, NFET 506 turns OFF and at the same time PFET 502 turns ON. PFET 502 pulls up the voltage VOUT towards VDDH.
FIG. 7 is a circuit diagram of an exemplary embodiment of a bias network. In this example, bias network 604 comprises bias resistor 702, a current source transistor (shown as NFET 706), voltage source 704, and an RC circuit comprising resistor 708 and capacitor 710. The gate voltage for NFET 706 is VDDH−Vswing, so the source voltage of NFET 706 is VDDH−Vswing−Vthn, leaving a net voltage across resistor 702 of VDDH−Vswing−Vthn−VSSH. Bias resistor 702 and resistor 708 have the same resistance Rb and since the same current Ib is drawn through both resistors, resistor 708 also has a net voltage of VDDH−Vswing−Vthn−VSSH across it. This insures that NFET 602 only switches ON when the drain to source voltage exceeds VDDH−Vswing−VSSH, the desired VBAT voltage. Capacitor 710 is added to maintain a constant voltage on resistor 708 during signal transitions.
Bias network 604 as shown in FIG. 7 maintains a gate voltage of VDDH−Vswing−Vthn−VSSH to NFET 602, causing NFET 602 to maintain a voltage of VBAT=VDDH−Vswing−VSSH. When the control signal is high, VOUT is VDDH, and when the control signal is low, VOUT is VDDH−Vswing. Therefore, the net swing of VOUT is equal to the target swing voltage Vswing, even if the supply voltages vary as a result of process, voltage and temperature (PVT) variations. In this way, battery assisted level shifter 500 can be configured with a target swing voltage which does not vary as a result of PVT variations.
FIG. 8 is a circuit diagram of another exemplary embodiment of a battery assisted level shifter. Battery assisted level shifter 800 comprises a pull-up transistor (shown as PFET 802), a pull-down transistor (shown as NFET 806) and battery element 804. Battery element 804 has a negative terminal coupled to PFET 802 and a positive terminal coupled to the high supply rail. When PFET 802 is switched on, it pulls output voltage VOUT up to the voltage supplied by the high supply rail, minus the voltage across battery element 804 (denoted by VBAT). The high supply voltage is denoted by VDDH. When NFET 806 is switched on, it pulls output voltage VOUT down to the voltage supplied by the low supply rail (denoted by VSSH), which can be set to the ground potential or other suitable values. Battery element 804 maintains the voltage VBAT across its two terminals regardless of the current that is drawn through it under design operating conditions. Battery assisted level shifter 800 is a complementary circuit to battery assisted level shifter 500. If the input signals which are used as the control signal to NFET 806 and PFET 802 swing from VSSI to VDDI, battery assisted level shifter 800 converts that signal to an output signal that swings from VDDH−VBAT to VSSH. If VBAT is configured to equal VDDH−Vswing−VSSH, then the output of battery assisted level shifter 800 swings from VSSH to VSSH+Vswing. Therefore, battery assisted level shifter 800 can be configured with a target swing voltage Vswing which is not sensitive to variations in the supply voltages. Battery element 804 differs from battery element 504 as shown.
FIG. 9 is a circuit diagram of the embodiment of battery assisted level shifter 800 with an embodiment of battery element 804 shown in greater detail. In this embodiment, battery element 804 comprises a battery transistor (shown as NFET 902), bias network 604 and a clamping transistor (shown as NFET 904). Bias network 604 provides a voltage of VBAT−Vthn between the drain and gate of NFET 902, where Vthn is the threshold of NFET 902. When NFET 902 has a drain-to-source voltage greater than VBAT, NFET 902 turns ON. When NFET 902 has a drain-to-source voltage less than VBAT, NFET 902 turns OFF. These two factors cause NFET 902 to maintain a drain-to-source voltage of VBAT. Bias network 604 functions as described above.
Clamping NFET 904 is connected between VSSH and Vgp and is designed to turn on when Vgp rises above its target voltage, VSSH+Vswing, to prevent VBAT from dropping below the target voltage. This state is achieved by setting clamping voltage Vclamp-P=VSSH+Vswing−Vthp, where Vthp is the threshold voltage of PFET 902. Because bias network 604 can maintain a battery voltage of VDDH−Vswing−VSSH, the output to battery assisted level shifter 800 can have a target swing voltage of Vswing even under variations in the power supply voltages attributable to PVT variations.
FIG. 10 shows an exemplary embodiment of a battery assisted level shifter. Battery assisted level shifter 1000 comprises pull down transistors 1002 and 1004 (shown as NFETs), inverter 1006 and pull up transistors 1012 and 1014 (shown as PFETs). The input signal IN operates between 0 and VDD1 and the resultant output signal OUT operates between 0 and VDD2. The voltage at the drain of pull down NFET 1204 supplies the output signal OUT while the voltage at the drain of pull down NFET 1202 supplies the complementary output signal OUT.
When the input signal is high, the gate voltage of NFET 1002 is high and the gate voltage of NFET 1004 is low. This state turns on NFET 1002 and turns off NFET 1004. Because NFET 1002 is turned on, the drain voltage of NFET 1002 is pulled to VSS and consequently, the gate voltage of PFET 1014 is low, turning on PFET 1014. PFET 1014 can pull up signal OUT because NFET 1004 is turned off. At the same time, because PFET 1014 pulls up OUT, which is also the gate voltage of PFET 1012, PFET 1012 is turned off, enabling NFET 1002 to pull down signal OUT.
When the input signal is low, the gate voltage of NFET 1002 is low and the gate voltage of NFET 1004 is high, turning NFET 1002 off and NFET 1004 on. Because NFET 1004 is turned on, the drain voltage of NFET 1004 is pulled to VSS and consequently the gate voltage of PFET 1012 is low, turning on PFET 1012. PFET 1012 pulls up signal OUT because NFET 1002 is turned off. At the same time, because PFET 1012 pulls up OUT (which is also the gate voltage of PFET 1014), PFET 1014 is turned off, enabling NFET 1004 to pull down signal OUT.
Each time one of the NFETs turns on, it also pulls down on the source of a PFET. However, to do this quickly, the NFET would have to draw a great amount of current (sometimes referred to as shoot-through current) during the high to low transition. The amount of current is dependent on the impedance of the PFET when turned off. If the impedance is high, the NFET would need less current. However, even though a small PFET has high impedance, it would have more difficulty pulling up the voltage in the low to high transition.
FIG. 11 shows another exemplary embodiment of a battery assisted level shifter. Like battery assisted level shifter 1000, battery assisted level shifter 1100 comprises pull down NFETs 1002 and 1004, inverter 1006 and pull up PFETs 1012 and 1014. Battery assisted level shifter 1100 further comprises “strong” pull up transistors (shown as PFETs 1106 and 1108) and switches 1102 and 1104. When the input signal is high, the gate voltage to PFET 1014 is high, turning on PFET 1014 at approximately the same time control signal ctrl1 goes high, causing switch 1104 to close and activating PFET 1108. This state allows PFET 1108 to aid PFET 1014 in pulling up OUT. Similarly when the input signal is low, the gate voltage to PFET 1012 is high, turning on PFET 1012 at approximately the same time control signal ctrl2 goes high, causing switch 1102 to close activating PEET 1106. This state allows PFET 1106 to aid PFET 1012 in pulling up OUT. Strong PFETs 1106 and 1108 are often larger than their counterparts PFET 1012 and PFET 1014, in order to provide lower impedance and faster pull up capabilities. While strong pull up PFETs 1106 and 1108 can assist PFETs 1012 and 1014 in pulling up voltages OUT and OUT, respectively, because of their lower impedance, current is still drawn through them even when they are not activated.
FIG. 12 shows yet another exemplary embodiment of a battery assisted level shifter. Like battery assisted level shifter 1100, battery assisted level shifter 1200 comprises pull down NFETs 1002 and 1004, inverter 1006, pull up PFETs 1012 and 1014, strong pull up PFETs 1106 and 1108 and switches 1102 and 1104. Battery assisted level shifter 1200 further comprises switches 1202 and 1204. When the input signal is high, the gate voltage to PFET 1014 is high, turning on PFET 1014. At approximately the same time, control signal ctrl1 goes high and causes switch 1104 to close, activating PFET 1108. This state allows PEET 1108 to aid PFET 1014 in pulling up OUT. Meanwhile, NFET 1002 is pulling down OUT, but it only has to pull down against the impedance of PFET 1012 because control signal ctrl2 as received by switch 1202 is high. This state ties the gate and drain of PEET 1106 together, forcing PEET 1106 into a high impedance state. When the input signal is low, the gate voltage to PFET 1012 is high turning on PFET 1012. At approximately the same time, control signal ctrl2 causes switch 1102 to close and activate PFET 1106. This state allows PFET 1106 to aid PFET 1012 in pulling up OUT. Meanwhile, NFET 1004 pulls down OUT but only has to pull down against the impedance of PFET 1014, because control signal ctrl1 as received by switch 1204 is high. This state ties the gate and drain of PFET 1108 together, forcing PFET 1108 into a high impedance state.
FIG. 13 shows yet another exemplary embodiment of a battery assisted level shifter. Like battery assisted level shifter 1100, battery assisted level shifter 1300 comprises pull down NFETs 1002 and 1004, inverter 1006, pull up PFETs 1012 and 1014, strong pull up PFETs 1106 and 1108 and switches 1102 and 1104. Battery assisted level shifter 1300 further comprises switches 1302 and 1304. When the input signal is high, the gate voltage to PFET 1014 is high, turning on PFET 1014. At approximately the same time, control signal ctrl1 goes high, causing switch 1104 and switch 1304 to close, activating PFET 1108 and connecting the source of PFET 1108 to OUT. This state allows PFET 1108 to aid PFET 1014 in pulling up OUT. Meanwhile, NFET 1002 is pulling down OUT, but it only has to pull down against the impedance of PFET 1012 because control signal ctrl2 received by switch 1302 and by switch 1102 is low, thereby disconnecting PFET 1106 from the level shifter circuit. When the input signal is low, the gate voltage to PFET 1012 is high, turning on PFET 1012. At approximately the same time, control signal ctrl2 causes switch 1102 and switch 1302 to close, activating PFET 1106 and connecting the source of PFET 1106. This state allows PFET 1106 to aid PFET 1012 in pulling up OUT. Meanwhile, NFET 1004 pulls down OUT, but it only has to pull down against the impedance of PFET 1014 because control signal ctrl1 as received by switch 1104 and switch 1304 is low, thereby disconnecting PFET 1108 from the level shifter circuit.
Control signal ctrl1 should go high approximately when the input signal goes high, and control signal ctrl2 should go high approximately when the input signal goes low. The input signal IN can be used for control signal ctrl1 and its complement IN can be used for control signal ctrl2. A control signal which transitions prior to the transition of the input signal will cause the strong PFETs to assist in switching the level shifter. The strong PFETs will draw current before it is needed when that occurs, so it is desirable not to have the control signal transition before the transition in the input signal. A transition in the control signal after the transition in the input signal can benefit the level shifter by having the appropriate strong PFET assist the transition in the level shifter without unduly drawing current prematurely.
FIG. 14 is a diagram illustrating exemplary signaling that can be used with battery assisted level shifter 1200 or 1300. Signal 1402 is the input signal to the level shifter. Signal 1412 illustrates an embodiment of control signal ctrl1 and signal 1414 illustrates an embodiment of control signal ctrl2. In this example, control signal ctrl1 and ctrl2 are complementary. Control signal ctrl1 is a version of the input signal delayed by a predetermined delay, but can also be the input signal, i.e., a delay of zero. Because the assistance from the strong PFETs is used only for the transition, they only need to be activated around the time of transitions in the input signal.
Signal 1422 illustrates an alternate embodiment of control signal ctrl1 and signal 1424 illustrates an alternate embodiment of control signal ctrl2. In this example, the respective control signals remain high only for a short predetermined period around transitions from high to low and from low to high. The period of time for each signal to remain high should be approximately long enough for the level shifter to make the transition to the output signal. However, even if the control signal is too short, it still enables the appropriate strong PFET to assist in the transitions in the level shifter.
Signal 1432 is the output signal of the level shifter. In another embodiment, control signal ctrl1 can be OUT and control signal ctrl2 can be OUT. By tying the control signal to the output signal, the control signal is naturally delayed because the appropriate pull-up PFET has to pull the voltage up enough to enable the switches that activate the strong PFET to assist. The control signal is chosen as a function of simplicity of circuit design, power consumption and other circuit design parameters and objectives.
It should be emphasized that the above-described embodiments are merely examples of possible implementations. Many variations and modifications may be made to the above-described embodiments without departing from the principles of the present disclosure. For example, the bias network could be based on switched-capacitor techniques. Additionally, pull up transistors are represented by PFETs and pull down transistors by NFETs, but other transistor types can be used as well. All such modifications and variations are intended to be included herein within the scope of this disclosure and protected by the following claims.

## Claims

1. A circuit comprising:
a pull-up transistor coupled to an output and operable to receive a control signal;
a pull-down transistor coupled to the pull-up transistor and the output and operable to receive the control signal;
a battery element coupled between either of 1) a high supply rail having a high supply voltage or a low supply rail having a low supply voltage and 2) the pull-up transistor or the pull-down transistor, respectively, wherein the battery element maintains a voltage substantially equal to the high supply voltage minus the low supply voltage and a target swing voltage.

2. The circuit of claim 1, wherein the pull-up transistor is a p-type field effect transistor (PFET).

3. The circuit of claim 1, wherein the pull-down transistor is an n-type field effect transistor (NFET).

4. The circuit of claim 1, wherein the battery element is coupled to the low supply rail and the pull-down transistor.

5. The circuit of claim 4, wherein the battery element comprises:
a transistor having an input and terminals, said terminals coupled to the low supply rail and the pull down transistor;
a bias network coupled to the input of the battery element transistor; and
a clamping transistor coupled to the high supply rail, the battery element transistor, and a clamping voltage.

6. The circuit of claim 5 wherein the clamping transistor has a threshold voltage and the clamping voltage is substantially equal to the high supply voltage minus the target swing voltage plus the threshold voltage.

7. The circuit of claim 5 wherein the bias network comprises:
an RC circuit;
a transistor coupled to the RC circuit;
a bias resistor coupled to the bias network transistor and the low supply rail; and
a voltage supply coupled to the high supply rail that maintains the swing voltage and coupled to the bias network transistor.

8. The circuit of claim 1, wherein the battery element is coupled to the high supply rail and the pull-up transistor.

9. The circuit of claim 8, wherein the battery element comprises:
a first transistor having an input and terminals, said terminals coupled to the high supply rail and the pull up transistor;
a bias network coupled to the input of the battery element transistor; and
a second transistor coupled to the low supply rail, the first transistor, and a clamping voltage.

10. The circuit of claim 9 wherein the first transistor has a threshold voltage and the clamping voltage is substantially equal to the low supply voltage plus the target swing voltage minus the threshold voltage.

11. The circuit of claim 9 wherein the bias network comprises:
an RC circuit;
a transistor coupled to the RC circuit;
a bias resistor coupled to the bias network transistor and the low supply rail; and
a voltage supply coupled to the high supply rail that maintains the swing voltage and coupled to the bias network transistor.

12. The circuit of claim 1 wherein a gate of the pull-up transistor is coupled to a gate of the pull-down transistor.

13. A method for generating a signal comprising:
pulling up an output to a high supply rail having a high supply voltage when an input signal is high;
pulling down the output to a positive terminal of a battery element when the input signal is low, the positive terminal having a voltage substantially equal to a battery voltage plus a low supply voltage; and
maintaining the battery voltage across the battery element at a value that is substantially equal to the high supply voltage minus 1) the low supply voltage and 2) a target swing voltage.

14. The method of claim 13, wherein maintaining the battery voltage comprises:
biasing a battery transistor to maintain a voltage equal to a sum of 1) the target swing voltage and 2) a difference between the high supply voltage and the low supply voltage; and
clamping a positive terminal of the battery element to a voltage substantially equal to the high supply voltage minus the target swing voltage when the input signal goes low.

15. A method for generating a signal comprising:
pulling down an output to a low supply rail having a low supply voltage when an input signal is low;
pulling up the output to a negative terminal of a battery element when the input signal is low, the negative terminal having a voltage substantially equal to a high supply voltage minus a battery voltage; and
maintaining the battery voltage across the battery element substantially equal to the high supply voltage minus the low supply voltage and a target swing voltage.

16. The method of claim 15, wherein maintaining the battery voltage comprises:
biasing a transistor to maintain a voltage equal to a sum of 1) the target swing voltage and 2) the difference between the high supply voltage and the low supply voltage; and
clamping the negative terminal of the battery element to a voltage substantially equal the low supply voltage plus the target swing voltage to when the input signal goes high.

17. A circuit comprising:
a pull-up transistor coupled to an output and operable to receive a control signal;
a pull-down transistor coupled to the pull-up transistor and the output and operable to receive the control signal; and
means for maintaining a voltage substantially equal to the high supply voltage minus the low supply voltage and a target swing voltage.

18. The circuit of claim 17, wherein the pull-up transistor is a p-type field effect transistor (PFET).

19. The circuit of claim 17, wherein the pull-down transistor is an n-type field effect transistor (NFET).

20. The circuit of claim 17 wherein a gate of the pull-up transistor is coupled to a gate of the pull-down transistor.