Draft Emission Factors for Refined 

Semiconductor Manufacturing Process Categories 

U.S. Environmental Protection Agency 

May 2010 
 

Table of Contents

1. Emission Factor Data..........................................................................................................................................................3 

2. Emission Factor Development.......................................................................................................................................4 

3. Measures Taken to Rectify Gaps in Available Information...................................................5 

4. References..........................................................................................................................................................................................7 

Table of Tables

Table 1. Relationship Between Feature Type/Process Descriptor and Film Type 

Used by EPA to Form EFs When Film Type Was Not Provided............................................................4 

Table 2. Draft Default Emission Factors for Refined Process Categories for 

Semiconductor Manufacturing for 150 mm Wafer Size..............................................................................8 

Table 3. Draft Default Emission Factors for Refined Process Categories for 

Semiconductor Manufacturing for 200 mm Wafer Size...........................................................................10 

Table 4. Draft Default Emission Factors for Refined Process Categories for 

Semiconductor Manufacturing for 300 mm Wafer Size...........................................................................12 

Table 5. EF Development Database..............................................................................................................................14
 3

In an April 12, 2010 proposed rule, Mandatory Reporting of Greenhouse 

Gases: Additional Sources of Fluorinated GHGs (75 FR 18652) EPA put 

forth three sets of draft default emission factor (EF) ranges for nine 

distinct refined process categories, one set of EF ranges per 

production technology generation (i.e., 150 mm, 200 mm, and 300 mm 

wafer sizes). Ranges were proposed at that time because EPA had not yet 

received sufficient data to select a specific value within each range. 

EPA stated in the rule that if additional data were received in a 

timely fashion, EPA may develop draft EFs prior to the issuance of a 

final rule. EPA has since received additional data to develop draft 

EFs. These draft factors, which are again distinguished by the three 

wafer sizes, are presented in this report. 

1. Emission Factor Data

To develop the draft EFs presented here, EPA used industry data 

provided in cooperation with Semiconductor Equipment and Materials 

International (SEMI), which redacted identifying company information.1

 

All of the data are compiled in an EF development database. The 

complete database is presented in Table 5. The EF data in Table 5, 

which is identified by process category and wafer technology, includes 

single and multi-gas process chemistries. EF information is provided 

for single and multi-gas utilization and by-product formation rates. 

The table denotes the dominant gas, the mass fraction emitted and the 

by-product formation rates expressed as a mass fraction of the dominant 

gas. The table also denotes the mass-emitted fractions of the other 

gases used when multiple gases are employed in either chamber cleaning 

or film etching emission processes. 

Some providers of data identified a broad emission category (i.e., 

chamber cleaning, etching and wafer cleaning) as well as an emission 

subcategory. For information pertaining to etching subcategories, for 

example, some data-providers identified the film being etched (i.e., 

oxide, nitride, silicon or metal) as well as the feature being etched 

(i.e., high aspect ratio trench, via, contact etch, etc.) along with 

their preference between the two subcategories for purposes of 

estimating emissions. 

Some providers identified only an etch feature, some identified only a 

film type, and some identified both. When only a feature type was 

identified, EPA assigned that EF information to one of the film types. 

Table 1 presents the relationship EPA used to map feature etch category 

into film type category. (See EPA’s proposed definitions of film type 

in the proposed rule, Mandatory Reporting of Greenhouse Gases: 

Additional Sources of Fluorinated GHGs (75 FR 18652)). 

 1 See TECHNICAL SUPPORT DOCUMENT (UPDATED) FOR PROCESS EMISSIONS FROM 

ELECTRONICS MANUFACTURE (e.g., SEMICONDUCTORS, LIQUID CRYSTAL DISPLAYS, 

PHOTOVOLTAICS, AND MICRO-ELECTRO-MECHANICAL SYSTEMS): PROPOSED RULE FOR 

MANDATORY REPORTING OF GREENHOUSE GASES for more information.
 4

Table 1. Relationship Between Feature Type/Process Descriptor and Film Type 

Used by EPA to Form EFs When Film Type Was Not Provided 

Feature type/process 

descriptor 

Film type Comment 

Trench etch1 Oxide Used for FSG, TEOS, 

low k dielectric 

films 

Via etch1 Oxide Used for FSG, TEOS, 

low k dielectric 

films 

Contact etch Oxide 

Pad etch Oxide 

Multi level contact 

etch 

Oxide 

1

 Includes high aspect ratio trench and high aspect ratio via etch. 

When only a film type was provided EPA was unable to assign that EF 

information to a specific feature-etch subcategory. A consequence of 

this omission is that EPA did not receive sufficient information to 

develop draft EFs for both feature-etch and film-etch subcategories. 

Therefore, in this report only the film-etch subcategory EFs are 

provided. 

2. Emission Factor Development

The draft EFs are presented in Tables 2, 3, and 4. The EFs are simple 

(unweighted) averages developed employing an approach similar to that 

used for the 2006 IPCC Guidelines.2 Each entry in the draft table of 

EFs represents an average of the appropriate values in Table 5 with 

each entry given equal weight. Two conventions used in calculating the 

draft EFs merit special mention and are described next, using an 

example. 

For oxide etch for the 300 mm wafer technology, it is evident in Table 

5 that trifluoromethane (CHF3) may be the dominant gas or a second gas 

in multi-gas chemistries. There are five total entries for 1-U (the 

emission rate) when CHF3 is either the dominant gas or the second gas. 

The average draft EF reported by EPA for CHF3 for oxide etch for 300 mm 

(given in Table 4) is the simple average of the five data entries for 

utilization of CHF3. The approach for determining the CHF3 EF was also 

followed for any other gas that was a dominant, second or third gas for 

any emission process category. 

When forming average by-product-formation emission factors, EPA used 

the following procedure. Using CHF3 (oxide etch, 300 mm) again as an 

example and referring to Table 5, it is evident that the by-product 

 2

 For additional information on the 2006 IPCC factor development 

methodology, see Emission Factors for Semiconductor Manufacturing: 

Sources, Methods, and Results (February 2006) available in the docket 

(EPA–HQ–OAR–2009–0927). 
 5

formation factor appears in one instance — when CHF3 is the dominant 

gas for one occurrence. It is also evident that there are five entries 

for CHF3, two when it is the dominant gas and three when it is not the 

dominant gas (when hexafluorobutadiene - C4F6 -is the dominant gas in 

those three instances). The single CF4 by-product (BCF4) value in Table 

5 is divided by five to arrive at the value for BCF4 given in Table 4. 

To do otherwise would overstate CF4 by-product formation when 

estimating its emissions from CHF3 use. 

3. Measures Taken to Rectify Gaps in Available Information

Using the information and rationale described below, EPA has addressed 

gaps for 150 mm EF data and 300 mm wafer cleaning EF data. As evident 

by the “NA” entries in Tables 2, 3, and 4 (NA denotes not applicable 

based on currently available information) and the information presented 

in Table 5, there are still gaps in the EF data that is available to 

EPA. 

150 mm EF Data Gap 

Table 5 includes only one value for F-GHG usage during device 

manufacture on 150 mm wafers. In the absence of additional data for 150 

mm emission process categories, EPA, for the purposes of this NODA, is 

assuming that the EFs for 200 mm technologies apply. EPA bases this 

assumption on the belief that EFs for 150 mm processing technology are 

closer to 200 mm processing technologies than to 300 mm processing 

technologies [see Beu (2005)]. Moreover, EPA understands that a portion 

of the EFs for 200 mm processing in Table 5 were developed on early 200 

mm equipment prior to efforts by device and equipment manufacturers to 

reduce F-GHG usage, which occurred during the latter half of the 200 mm 

wafer era. The average draft EFs in Table 4 reflect emission 

measurements made in the earlier and later portions of the 200 mm wafer 

era.3

 To apply EFs for 300 mm wafer processing equipment to 150 mm 

might result in reported emissions being understated when EFs for 300 

mm are smaller than those for 200 mm [see Beu (2005)]. This concern is 

supported by comparing the chamber cleaning EFs for 200 mm and 300 mm 

technologies. Reports in the 200 mm wafer era indicated that chamber 

cleaning accounted for the majority of F-GHG usage. 

 

Wafer Cleaning EF Data Gap (300 mm) 

Under the wafer clean category, EPA only received data for ashing for 

the 300 mm wafer size. Using the information and rationale described 

below, EPA drew an analogy between the developed 300 mm CF4 EF for 

ashing and 300 mm bevel cleaning CF4 EF. 

 3 In using the term “200 mm era” EPA is referring to the period during which 

the majority of R&D expenditures by device and equipment manufacturers 

were directed to 200 mm wafers. Toward the end a wafer technology era, R&D 

attention shifted to the next generation of wafer technology, 300 mm 

wafers.
 6

Device manufacturers are using bevel cleaning to improve device yields 

by reducing sources of defects caused by particles generated via 

flaking or peeling of polymer materials during wafer handling between 

processing steps. EPA understands manufacturers are inserting bevel 

clean steps into the process flow using a dry (plasma), wet, or 

polishing process. 

To clean etch by-product polymers or dielectric films at the bevel edge 

via a dry (plasma) process, cleaning gas mixtures include O2 and some 

amount of a fluorine-containing gas (<10 percent), such as CF4 or SF6. 

Plasma-induced chemical etching depends on many factors, including the 

nature of the chemical precursor(s) and details of the ionization, 

dissociation and excitation that results in the etching process on the 

wafer. In short, it is the chemical properties of the feed gas(es) and 

physical properties of the reactor design that govern the practice of 

chemical etching via plasma [see G. W. Hills and J. M. Cook (2000)]. 

When the etch tool is designed primarily for isotropic etch, such as 

photoresist ash, considerable efforts go to remove ions, electrons and 

photons from the incident flux on the wafer, leaving only neutrals (F 

atoms, for example) to remove unwanted material(s). This is done to 

ensure that the reactions occurring are chemical, that they are not 

enhanced by the addition of energy in the form of ion-impact or photon 

excitation. [see G. W. Hills and J. M. Cook (2000)] 

Bevel cleaning via plasma is an isotropic etching process, analogous to 

photoresist ash. EPA, by virtue of this analogy, has assigned the draft 

utilization emission factor for CF4 for ashing to the bevel cleaning 

wafer cleaning subcategory. The available patent literature for plasmabased bevel cleaning supports this approach in that CF4 is identified 

as one of two gases for bevel cleaning. [e.g., see Kim et al. (2009)] 

The other gas mentioned for bevel cleaning is SF6. EPA’s EF database 

does not contain gas utilization information for SF6 for ashing or 

chamber cleaning (another isotropic etching process). EPA is filling 

this gap in SF6 data by using a draft value based on the SF6 utilization 

for in situ chamber cleaning provided in the IPCC Good Practice 

Guidance and Uncertainty Management in National Greenhouse Gas 

Inventories (Chapter 3, Table 3.15). [see IPCC (2000)] 
 7

4. References

Beu (2005), “Reduction of Perfluorocompound (PFC) Emissions: 2005 

State-of-the-Technology Report” (Technology Transfer #05104693A-Eng), 

December 2005. 

F. Burkeen, et al (2007), "Visualizing the Wafer's Edge," KLA-Tencor 

YMS Magazine, Winter 2007. 

Hills and J. M. Cook (2000), “Plasma Etching” in Handbook of 

Semiconductor Manufacturing Technology, ed. Y. Nishi and R. 

Doering, Marcel Dekker, Inc., 2000. Available at 

http://books.google.com/books?id=Qi98HiTgLEC&pg=PA655&lpg=PA655&dq=Hills+and+Cook+2000+%E2%80%9CPlasma+Etchin

g%E2%80%9D+Handbook+Semiconductor+Manufacturing+Technology&source=bl&ot

s=4nZOJLibok&sig=78C0NSw3kTpa3xZHtr74A3JVxs&hl=en&ei=qVDpS_HJGIOKlwfX4Y

3tCg&sa=X&oi=book_result&ct=result&resnum=1&ved=0CBcQ6AEwAA#v=onepage&q

&f=false. Accessed May 11, 2010. 

Intergovernmental Panel on Climate Change (IPCC 2000), “IPCC Good 

Practice Guidance and Uncertainty Management in National Greenhouse Gas 

Inventories” (Chapter 3, Table 3.15), 2000.

Kim et al (2009). Patent 20070068900A1, March 29, 2007 and Kim et al. 

Patent 20090272402A1, November 5, 2009.
 8

Table 2. Draft Default Emission Factors for Refined Process Categories 

for Semiconductor Manufacturing for 150 mm Wafer Size 

Refined Process 

Category 

Process Gas i 

CF4 C2F6 CHF3 CH2F2 C3F8 C4F8 NF3 SF6 C4F6 C5F8 C4F8O

PATTERNING/ETCHING 

Oxide etch 

 1-Ui 0.66 0.56 0.30 0.093 NA 0.25 NA 0.20 0.14 NA NA 

 BCF4 NA 0.23 0.030 0.021 NA 0.19 NA NA 0.13 NA NA 

 BC2F6 NA NA NA NA NA 0.11 NA NA 0.12 NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

Nitride etch 

 1-Ui 0.77 NA 0.80 NA NA NA NA NA NA NA NA 

 BCF4 NA NA NA NA NA NA NA NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

Silicon etch 

 1-Ui NA NA NA NA NA NA 0.038 NA NA NA NA 

 BCF4 NA NA NA NA NA NA 0.0040 NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

Metal etch 

 1-Ui NA NA 0.52 NA NA NA NA NA NA NA NA 

 BCF4 NA NA 0.018 NA NA NA NA NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

CHAMBER CLEANING 

In situ plasma cleaning 

 1-Ui 0.91 0.55 NA NA 0.40 0.10 0.18 NA NA NA 0.14 

 BCF4 NA 0.19 NA NA 0.20 0.11 0.011 NA NA NA 0.13 

 BC2F6 NA NA NA NA NA NA NA NA NA NA 0.030 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

Remote plasma cleaning 

 1-Ui NA NA NA NA NA NA 0.029 NA NA NA NA 

 BCF4 NA NA NA NA NA NA 0.0047 NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

In situ thermal cleaning 

 1-Ui NA NA NA NA NA NA NA NA NA NA NA 

 BCF4 NA NA NA NA NA NA NA NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 
 9

Refined Process 

Category 

Process Gas i 

CF4 C2F6 CHF3 CH2F2 C3F8 C4F8 NF3 SF6 C4F6 C5F8 C4F8O

WAFER CLEANING 

Bevel Cleaning 

 1-Ui NA NA NA NA NA NA NA NA NA NA NA 

 BCF4 NA NA NA NA NA NA NA NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

Ashing 

 1-Ui NA NA NA NA NA NA NA NA NA NA NA 

 BCF4 NA NA NA NA NA NA NA NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

Notes: NA denotes not applicable based on currently available information. 
 10

Table 3. Draft Default Emission Factors for Refined Process Categories 

for Semiconductor Manufacturing for 200 mm Wafer Size 

Refined Process 

Category Process Gas i 

CF4 C2F6 CHF3 CH2F2 C3F8 C4F8 NF3 SF6 C4F6 C5F8 C4F8O

PATTERNING/ETCHING 

Oxide etch 

 1-Ui 0.66 0.56 0.30 0.093 NA 0.25 NA 0.20 0.14 NA NA 

 BCF4 NA 0.23 0.030 0.021 NA 0.19 NA NA 0.13 NA NA 

 BC2F6 NA NA NA NA NA 0.11 NA NA 0.12 NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

Nitride etch 

 1-Ui 0.77 NA 0.80 NA NA NA NA NA NA NA NA 

 BCF4 NA NA NA NA NA NA NA NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

Silicon etch 

 1-Ui NA NA NA NA NA NA 0.038 NA NA NA NA 

 BCF4 NA NA NA NA NA NA 0.0040 NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

Metal etch 

 1-Ui NA NA 0.52 NA NA NA NA NA NA NA NA 

 BCF4 NA NA 0.018 NA NA NA NA NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

CHAMBER CLEANING 

In situ plasma cleaning 

 1-Ui 0.91 0.55 NA NA 0.40 0.10 0.18 NA NA NA 0.14 

 BCF4 NA 0.19 NA NA 0.20 0.11 0.011 NA NA NA 0.13 

 BC2F6 NA NA NA NA NA NA NA NA NA NA 0.030 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

Remote plasma cleaning 

 1-Ui NA NA NA NA NA NA 0.029 NA NA NA NA 

 BCF4 NA NA NA NA NA NA 0.0047 NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

In situ thermal cleaning 

 1-Ui NA NA NA NA NA NA NA NA NA NA NA 

 BCF4 NA NA NA NA NA NA NA NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 
 11

Refined Process 

Category 

Process Gas i 

CF4 C2F6 CHF3 CH2F2 C3F8 C4F8 NF3 SF6 C4F6 C5F8 C4F8O

WAFER CLEANING 

Bevel cleaning 

 1-Ui NA NA NA NA NA NA NA NA NA NA NA 

 BCF4 NA NA NA NA NA NA NA NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

Ashing 

 1-Ui NA NA NA NA NA NA NA NA NA NA NA 

 BCF4 NA NA NA NA NA NA NA NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

Notes: NA denotes not applicable based on currently available information. 
 12

Table 4. Draft Default Emission Factors for Refined Process Categories for 

Semiconductor Manufacturing for 300 mm Wafer Size 

Refined Process 

Category 

Process Gas i 

CF4 C2F6 CHF3 CH2F2 C3F8 C4F8 NF3 SF6 C4F6 C5F8 C4F8O 

PATTERNING/ETCHING 

Oxide etch 

 1-Ui 0.67 0.80 0.52 0.086 NA 0.29 NA NA 0.09 NA NA 

 BCF4 NA NA 0.0020 0.0015 NA 0.079 NA NA 0.27 NA NA 

 BC2F6 NA NA 0.0020 NA NA 0.12 NA NA 0.29 NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

Nitride etch 

 1-Ui 0.97 NA 0.50 0.24 NA NA 0.23 NA NA NA NA 

 BCF4 NA NA 0.0030 0.00040 NA NA NA NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

Silicon etch 

 1-Ui 0.87 NA 0.58 NA NA NA 0.42 0.37 NA NA NA 

 BCF4 NA NA NA NA NA NA NA NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

Metal etch 

 1-Ui NA NA 0.16 NA NA NA NA NA NA NA NA 

 BCF4 NA NA NA NA NA NA NA NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

CHAMBER CLEANING 

In situ plasma cleaning 

 1-Ui NA NA NA NA NA NA 0.23 NA NA NA NA 

 BCF4 NA NA NA NA NA NA 0.0046 NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

Remote plasma cleaning 

 1-Ui NA NA NA NA 0.063 NA 0.017 NA NA NA NA 

 BCF4 NA NA NA NA NA NA 0.040 NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

In situ thermal cleaning 

 1-Ui NA NA NA NA NA NA 0.28 NA NA NA NA 

 BCF4 NA NA NA NA NA NA 0.010 NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 
 13

Refined Process 

Category 

Process Gas i 

CF4 C2F6 CHF3 CH2F2 C3F8 C4F8 NF3 SF6 C4F6 C5F8 C4F8O

WAFER CLEANING 

Bevel cleaning 

 1-Ui 0.77 NA NA NA NA NA NA 0.20 NA NA NA 

 BCF4 NA NA NA NA NA NA NA NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

Ashing 

 1-Ui 0.77 NA NA 0.24 NA NA 0.23 NA NA NA NA 

 BCF4 NA NA NA NA NA NA NA NA NA NA NA 

 BC2F6 NA NA NA NA NA NA NA NA NA NA NA 

 BC3F8 NA NA NA NA NA NA NA NA NA NA NA 

Notes: NA denotes not applicable based on currently available information.
Table 5. EF Development Database 

Record 

Number 

Emission 

process 

category 

Wafer 

size, 

mm Wt 

Number 

of FGHGs 

used in 

process 

category 

Dominant 

gas, ID 

Dominant 

gas use 

rate, (1-U) 

Dominant 

gas meas. 

error, σ

CF4 

formation 

rate, B 

BCF4 

meas. 

error, σ

C2F6 

formation 

rate, B 

BC2F6 

meas. 

error, σ

C3F8 

formation 

rate, B 

BC3F8 

meas. 

error, σ

Gas 2, 

ID 

G

r

(

1 

Deposition, N2O 300 1 N2O 0.482 0.0142 

2 

Remote plasma clean 300 2 NF3 0.00417 0.000148 N2O 0

3 Oxide etch 200 2 CF4 0.722 0.029 CHF3 04 

Remote plasma clean 300 1 NF3 0.01 

5 

Remote plasma clean 300 1 NF3 0.01 

6 

In situ plasma clean 200 1 NF3 0.11 

7 

In situ plasma clean 300 1 NF3 0.13 

8 Oxide etch 300 4 9 Oxide etch 200 1 CF4 0.8 0.0251 

10 Oxide etch 200 2 CF4 0.49 0.0574 CHF3 011 

Remote plasma clean 300 2 NF3 0.00902 0.000948 0.788 0.14 N2O 

12 

Deposition, N2O 300 1 N2O 0.153 0.00845 

13 

Remote plasma clean 300 1 NF3 0.0443 0.000416 0.00105 

0.00063

8 

14 

Remote plasma clean 300 1 NF3 0.00881 0.00101 0.0485 0.0139 

15 

Remote plasma clean 200 1 NF3 0.0425 0.0117 0.0115 0.003 
Record 

Number 

Emission 

process 

category 

Wafer 

size, 

mm Wt 

Number 

of FGHGs 

used in 

process 

category 

Dominant 

gas, ID 

Dominant 

gas use 

rate, (1-U) 

Dominant 

gas meas. 

error, σ

CF4 

formation 

rate, B 

BCF4 

meas. 

error, σ

C2F6 

formation 

rate, B 

BC2F6 

meas. 

error, σ

C3F8 

formation 

rate, B 

BC3F8 

meas. 

error, σ

Gas 2, 

ID 

G

r

(

16 

In situ plasma clean 300 1 NF3 0.35 

17 

In situ plasma clean 300 1 NF3 0.21 

18 

Remote plasma clean 300 1 NF3 0.01 

19 

In situ plasma clean 300 1 NF3 0.101 0.00184 

20 

Remote plasma clean 300 1 NF3 0.00902 0.000948 0.788 0.14 

21 

In situ plasma clean 200 1 NF3 0.11 

22 

In situ plasma clean 200 1 NF3 0.14 

23 

Remote plasma clean 200 1 NF3 0.01 

24 

In situ plasma clean 200 1 NF3 0.16 

25 

In situ plasma clean 300 1 NF3 0.24 

26 

Remote plasma clean 300 1 NF3 0.0238 0.0052 0.063 0.00282 

27 

Remote plasma clean 300 2 NF3 0.0134 0.000834 N2O 0

28 Oxide etch 200 1 C2F6 0.555 0.0069 0.0814 0.00057 29 Remote 300 1 NF3 0.00199 0.000057 0.00147 1.65E- 
Record 

Number 

Emission 

process 

category 

Wafer 

size, 

mm Wt 

Number 

of FGHGs 

used in 

process 

category 

Dominant 

gas, ID 

Dominant 

gas use 

rate, (1-U) 

Dominant 

gas meas. 

error, σ

CF4 

formation 

rate, B 

BCF4 

meas. 

error, σ

C2F6 

formation 

rate, B 

BC2F6 

meas. 

error, σ

C3F8 

formation 

rate, B 

BC3F8 

meas. 

error, σ

Gas 2, 

ID 

G

r

(

plasma clean 

8 05

30 Oxide etch 200 1 C4F6 0.119 0.00575 0.0686 0.00514 0.0382 0.00161 31 

Deposition, N2O 200 1 N2O 0.75 

32 

Deposition, N2O 300 1 N2O 0.82 

33 

Remote plasma clean 300 1 NF3 0.004 0.0002 0.0016 0.0004 

34 

In situ thermal chamber clean 300 0.9 1 NF3 0.28 0.014 0.01 0.0025 

35 

In situ plasma clean 300 0.9 1 NF3 0.23 

36 

Nitride etch 300 0.9 1 CHF3 0.252 0.006 

37 

Nitride etch 300 0.9 1 NF3 0.23 

38 

Nitride etch 300 0.9 1 CH2F2 0.24 0.0004 0.002 

39 

Ash wafer 

clean 300 0.9 1 CF4 0.587 NF3 0

40 Oxide etch 300 0.9 1 C4F8 0.17 0.14 0.03 0.023 0.01 0.012 41 Oxide etch 300 0.9 1 CHF3 0.25 0.12 0.01 0.01 42 Oxide etch 300 0.9 1 CH2F2 0.14 0.003 43 Oxide etch 200 1 C4F6 0.0599 0.0113 0.017 0.00079 0.0312 

0.00036

8 

44 Oxide etch 200 1 C4F6 0.0364 0.00181 0.0377 

0.00057

2 0.0576 0.00079 

45 

Nitride etch 200 2 CF4 0.665 0.00557 CHF3 

46 

Remote plasma clean 300 1 NF3 0.05 
Record 

Number 

Emission 

process 

category 

Wafer 

size, 

mm Wt 

Number 

of FGHGs 

used in 

process 

category 

Dominant 

gas, ID 

Dominant 

gas use 

rate, (1-U) 

Dominant 

gas meas. 

error, σ

CF4 

formation 

rate, B 

BCF4 

meas. 

error, σ

C2F6 

formation 

rate, B 

BC2F6 

meas. 

error, σ

C3F8 

formation 

rate, B 

BC3F8 

meas. 

error, σ

Gas 2, 

ID 

G

r

(

47 

In situ plasma clean 200 1 NF3 0.09 

48 

In situ plasma clean 200 1 NF3 0.12 

49 Oxide etch 200 2 C4F6 0.21 0.357 CF4 050 Oxide etch 200 3 C4F6 0.6 0.571 CF4 051 

Nitride etch 200 1 CF4 0.97 

52 Oxide etch 200 2 C4F8 0.12 0.27 0.167 SF6 53 Oxide etch 200 2 C4F8 0.16 0.56 0.167 CHF3 054 Oxide etch 200 1 C4F6 0.162 0.429 0.071 55 Oxide etch 200 1 CHF3 0.3 0.25 56 Oxide etch 200 1 Ch2F2 0.32 0.031 57 Oxide etch 200 1 CF4 0.46 58 Oxide etch 300 3 C4F6 0.032 0.143 CH2F2 059 Oxide etch 300 3 C4F6 0.08 0.66 CHF3 060 

Nitride etch 200 2 CF4 0.66 CHF3 

61 Oxide etch 200 1 C4F6 0.12 0.069 0.038 62 Oxide etch 200 2 C4F6 0.04 0.04 0.056 CH2F2 063 Oxide etch 200 1 C4F6 0.06 0.017 0.056 64 Oxide etch 200 1 C2F6 0.56 0.11 65 Oxide etch 200 1 C4F6 0.0737 0.534 66 

Silicon etch 300 1 NF3 0.418 

67 Oxide etch 200 2 C4F6 0.021 0.257 CH2F2 068 Oxide etch 200 1 C2F6 0.266 0.418 69 

Silicon etch 300 1 CF4 0.911 

70 Metal etch 200 1 CHF3 0.516 0.018 
Record 

Number 

Emission 

process 

category 

Wafer 

size, 

mm Wt 

Number 

of FGHGs 

used in 

process 

category 

Dominant 

gas, ID 

Dominant 

gas use 

rate, (1-U) 

Dominant 

gas meas. 

error, σ

CF4 

formation 

rate, B 

BCF4 

meas. 

error, σ

C2F6 

formation 

rate, B 

BC2F6 

meas. 

error, σ

C3F8 

formation 

rate, B 

BC3F8 

meas. 

error, σ

Gas 2, 

ID 

G

r

(

71 

Silicon etch 200 1 NF3 0.0379 0.004 

72 Oxide etch 300 1 C4F6 0.091 0.32 0.178 73 Oxide etch 300 1 C4F6 0.12 0.325 0.155 74 Oxide etch 300 2 CHF3 0.451 CF4 075 Oxide etch 300 2 C4F6 0.095 0.509 0.305 CHF3 076 Oxide etch 300 2 C4F6 0.11 0.474 0.305 CHF3 077 

Silicon etch 300 1 CF4 0.862 

78 

Silicon etch 300 3 SF6 0.365 CHF3 0

79 Metal etch 300 1 CHF3 0.158 80 Oxide etch 200 3 C4F8 0.381 0.126 CHF3 081 Oxide etch 200 1 C4F8 0.105 0.069 0.011 82 Oxide etch 300 2 C4F8 0.46 0.206 C2F6 083 Oxide etch 300 2 C4F8 0.235 0.338 C2F6 084 

Nitride etch 300 2 CHF3 0.741 CF4 0

85 Oxide etch 200 2 C2F6 0.773 0.547 C4F8 086 Oxide etch 200 3 C4F8 0.431 0.271 CHF3 87 Oxide etch 200 2 C4F8 0.364 0.151 0.377 CHF3 088 Oxide etch 200 2 C4F8 0.128 0.049 CF4 089 Oxide etch 200 2 CHF3 0.2 0.049 CH2F2 090 Oxide etch 200 2 CH2F2 0.025 0.135 CHF3 091 Oxide etch 200 2 C4F8 0.182 0.238 0.031 CH2F2 092 Oxide etch 200 2 CHF3 0.103 0.021 CH2F2 093 Oxide etch 200 2 CHF3 0.1 0.041 CH2F2 094 Oxide etch 200 1 CHF3 0.105 0.035 95 

In situ plasma clean 200 1 CF4 0.95 
Record 

Number 

Emission 

process 

category 

Wafer 

size, 

mm Wt 

Number 

of FGHGs 

used in 

process 

category 

Dominant 

gas, ID 

Dominant 

gas use 

rate, (1-U) 

Dominant 

gas meas. 

error, σ

CF4 

formation 

rate, B 

BCF4 

meas. 

error, σ

C2F6 

formation 

rate, B 

BC2F6 

meas. 

error, σ

C3F8 

formation 

rate, B 

BC3F8 

meas. 

error, σ

Gas 2, 

ID 

G

r

(

96 

Remote plasma clean 200 1 NF3 0.087 

97 

Remote plasma clean 200 1 NF3 0.112 

98 

Remote plasma clean 200 1 NF3 0.172 

99 

Remote plasma clean 300 1 NF3 0.014 

100 

Remote plasma clean 300 1 NF3 0.0196 

101 

Remote plasma clean 300 1 NF3 0.0132 

102 

Remote plasma clean 300 1 NF3 0.0143 

103 

Remote plasma clean 200 1 NF3 0.04 

104 

In situ plasma clean 200 1 C2F6 0.43 0.17 

105 

In situ plasma clean 200 1 C2F6 0.36 0.2076 

106 

In situ plasma clean 200 1 CF4 0.857 

107 

In situ plasma clean 200 1 CF4 0.9346 

108 

In situ plasma 200 1 CF4 0.894 
Record 

Number 

Emission 

process 

category 

Wafer 

size, 

mm Wt 

Number 

of FGHGs 

used in 

process 

category 

Dominant 

gas, ID 

Dominant 

gas use 

rate, (1-U) 

Dominant 

gas meas. 

error, σ

CF4 

formation 

rate, B 

BCF4 

meas. 

error, σ

C2F6 

formation 

rate, B 

BC2F6 

meas. 

error, σ

C3F8 

formation 

rate, B 

BC3F8 

meas. 

error, σ

Gas 2, 

ID 

G

r

(

clean 

109 

Remote plasma clean 200 1 NF3 0.024 

110 

Remote plasma clean 200 1 NF3 0.0226 

111 

Remote plasma clean 200 1 NF3 0.0196 

112 

Remote plasma clean 200 1 NF3 0.013 

113 

Remote plasma clean 200 1 NF3 0.0065 

114 

Remote plasma clean 200 1 NF3 0.0111 

115 

Remote plasma clean 200 1 NF3 0.0111 

116 

Remote plasma clean 200 1 NF3 0.033 

117 

Remote plasma clean 200 1 NF3 0.017 

118 

Remote plasma clean 200 1 NF3 0.01 0.005 

119 

Remote plasma clean 300 1 NF3 0.026 0.036 

120 

Remote plasma clean 300 1 NF3 0.0123 

121 Remote 300 1 NF3 0.01 0.009 
Record 

Number 

Emission 

process 

category 

Wafer 

size, 

mm Wt 

Number 

of FGHGs 

used in 

process 

category 

Dominant 

gas, ID 

Dominant 

gas use 

rate, (1-U) 

Dominant 

gas meas. 

error, σ

CF4 

formation 

rate, B 

BCF4 

meas. 

error, σ

C2F6 

formation 

rate, B 

BC2F6 

meas. 

error, σ

C3F8 

formation 

rate, B 

BC3F8 

meas. 

error, σ

Gas 2, 

ID 

G

r

(

plasma clean 

122 

Remote plasma clean 300 1 NF3 0.01 0.006 

123 

Remote plasma clean 300 1 NF3 0.02 0.005 

124 

Remote plasma clean 200 1 NF3 0.02 

125 

Remote plasma clean 300 1 NF3 0.0082 

126 

Remote plasma clean 300 1 NF3 0.0138 0.002 

127 

Remote plasma clean 300 1 NF3 0.011 0.009 

128 

Remote plasma clean 300 1 NF3 0.0141 

129 

Remote plasma clean 300 1 NF3 0.0041 

130 

Remote plasma clean 300 1 NF3 0.0048 

131 

Remote plasma clean 300 1 C3F8 0.08 

132 

Remote plasma clean 300 1 C3F8 0.04 

133 

Remote plasma clean 300 1 C3F8 0.07 
Record 

Number 

Emission 

process 

category 

Wafer 

size, 

mm Wt 

Number 

of FGHGs 

used in 

process 

category 

Dominant 

gas, ID 

Dominant 

gas use 

rate, (1-U) 

Dominant 

gas meas. 

error, σ

CF4 

formation 

rate, B 

BCF4 

meas. 

error, σ

C2F6 

formation 

rate, B 

BC2F6 

meas. 

error, σ

C3F8 

formation 

rate, B 

BC3F8 

meas. 

error, σ

Gas 2, 

ID 

G

r

(

134 

Remote plasma clean 300 1 NF3 0.006 0.001 

135 

Remote plasma clean 300 1 NF3 0.047 0.036 

136 

Remote plasma clean 200 1 NF3 0.04 

137 

Remote plasma clean 300 1 NF3 0.0137 

138 

Remote plasma clean 300 1 NF3 0.0229 

139 

In situ plasma clean 200 2 C2F6 0.6006 0.15 NF3 0.

140 

Remote plasma clean 200 1 NF3 0.0156 

141 

Remote plasma clean 200 1 NF3 0.02 0.005 

142 

Remote plasma clean 200 1 NF3 0.0059 0.0002 

143 

Remote plasma clean 200 1 NF3 0.037 0.009 

144 

Remote plasma clean 300 1 NF3 0.0138 0.002 

145 

Remote plasma clean 300 1 NF3 0.0058 0.001 

146 

Remote plasma 200 1 NF3 0.0038 0.012 
Record 

Number 

Emission 

process 

category 

Wafer 

size, 

mm Wt 

Number 

of FGHGs 

used in 

process 

category 

Dominant 

gas, ID 

Dominant 

gas use 

rate, (1-U) 

Dominant 

gas meas. 

error, σ

CF4 

formation 

rate, B 

BCF4 

meas. 

error, σ

C2F6 

formation 

rate, B 

BC2F6 

meas. 

error, σ

C3F8 

formation 

rate, B 

BC3F8 

meas. 

error, σ

Gas 2, 

ID 

G

r

(

clean 

147 

Remote plasma clean 200 1 NF3 0.018 0.031 

148 

Remote plasma clean 200 1 NF3 0.0016 0.045 

149 

In situ plasma clean 200 2 C2F6 0.6744 0.15 NF3 0

150 

Remote plasma clean 200 1 NF3 0.0452 0.013 

151 

Remote plasma clean 200 1 NF3 0.0542 0.006 

152 

Remote plasma clean 200 1 NF3 0.0897 0.011 

153 

In situ plasma clean 200 2 C2F6 0.51 0.15 NF3 0

154 

Remote plasma clean 300 1 NF3 0.0032 0.048 

155 

Remote plasma clean 300 1 NF3 0.0038 0.042 

156 

Remote plasma clean 300 1 NF3 0.0048 0.09 

157 

Remote plasma clean 300 1 NF3 0.03 0.005 

158 

Remote plasma clean 300 1 NF3 0.0029 0.006 

159 Remote 300 1 NF3 0.0043 0.094 
Record 

Number 

Emission 

process 

category 

Wafer 

size, 

mm Wt 

Number 

of FGHGs 

used in 

process 

category 

Dominant 

gas, ID 

Dominant 

gas use 

rate, (1-U) 

Dominant 

gas meas. 

error, σ

CF4 

formation 

rate, B 

BCF4 

meas. 

error, σ

C2F6 

formation 

rate, B 

BC2F6 

meas. 

error, σ

C3F8 

formation 

rate, B 

BC3F8 

meas. 

error, σ

Gas 2, 

ID 

G

r

(

plasma clean 

160 

In situ plasma clean 200 1 NF3 0.762 0.019 

161 

Remote plasma clean 200 1 NF3 0.0115 0.005 

162 

Remote plasma clean 300 1 NF3 0.013 0.076 

163 

Remote plasma clean 300 1 NF3 0.007 0.035 

164 

Remote plasma clean 300 1 NF3 0.003 0.002 

165 

Remote plasma clean 200 1 NF3 0.004 0.043 

166 

Remote plasma clean 200 1 NF3 0.008 0.027 

167 

Remote plasma clean 300 1 NF3 0.004 0.014 

168 

Remote plasma clean 200 1 NF3 0.003 

169 

Remote plasma clean 200 1 NF3 0.01 

170 

Remote plasma clean 200 1 NF3 0.033 

171 

Remote plasma clean 200 1 NF3 0.003 
Record 

Number 

Emission 

process 

category 

Wafer 

size, 

mm Wt 

Number 

of FGHGs 

used in 

process 

category 

Dominant 

gas, ID 

Dominant 

gas use 

rate, (1-U) 

Dominant 

gas meas. 

error, σ

CF4 

formation 

rate, B 

BCF4 

meas. 

error, σ

C2F6 

formation 

rate, B 

BC2F6 

meas. 

error, σ

C3F8 

formation 

rate, B 

BC3F8 

meas. 

error, σ

Gas 2, 

ID 

G

r

(

172 

Remote plasma clean 200 1 NF3 0.005 

173 

Remote plasma clean 200 1 NF3 0.003 

174 

Remote plasma clean 200 1 NF3 0.003 

175 

Remote plasma clean 300 1 NF3 0.0076 

176 

Remote plasma clean 300 1 NF3 0.009 

177 

Remote plasma clean 300 1 NF3 0.0071 

178 

Remote plasma clean 200 1 NF3 0.0017 

179 

Remote plasma clean 200 1 NF3 0.04 

180 

Remote plasma clean 200 1 NF3 0.003 

181 

Remote plasma clean 200 1 NF3 0.01 

182 

Remote plasma clean 200 1 NF3 0.002 

183 

Remote plasma clean 200 1 NF3 0.04 

184 

Remote plasma 200 1 NF3 0.0021 
Record 

Number 

Emission 

process 

category 

Wafer 

size, 

mm Wt 

Number 

of FGHGs 

used in 

process 

category 

Dominant 

gas, ID 

Dominant 

gas use 

rate, (1-U) 

Dominant 

gas meas. 

error, σ

CF4 

formation 

rate, B 

BCF4 

meas. 

error, σ

C2F6 

formation 

rate, B 

BC2F6 

meas. 

error, σ

C3F8 

formation 

rate, B 

BC3F8 

meas. 

error, σ

Gas 2, 

ID 

G

r

(

clean 

185 

Remote plasma clean 300 1 NF3 0.032 

186 

Remote plasma clean 200 1 NF3 0.02 0.006 

187 

Remote plasma clean 200 1 NF3 0.01 

188 

Remote plasma clean 300 1 NF3 0.01 0.004 

189 

Remote plasma clean 300 1 NF3 0.006 

190 

Remote plasma clean 200 1 NF3 0.04 0.009 

191 

Remote plasma clean 300 1 NF3 0.013 

192 

Remote plasma clean 300 1 NF3 0.1933 

193 

Remote plasma clean 300 1 NF3 0.002 

194 

Remote plasma clean 200 1 NF3 0.02 

195 

Remote plasma clean 300 1 NF3 0.002 0.001 

196 

In situ plasma clean 200 1 C2F6 0.54 0.15 

197 In situ 200 1 C3F8 0.34 0.17 
Record 

Number 

Emission 

process 

category 

Wafer 

size, 

mm Wt 

Number 

of FGHGs 

used in 

process 

category 

Dominant 

gas, ID 

Dominant 

gas use 

rate, (1-U) 

Dominant 

gas meas. 

error, σ

CF4 

formation 

rate, B 

BCF4 

meas. 

error, σ

C2F6 

formation 

rate, B 

BC2F6 

meas. 

error, σ

C3F8 

formation 

rate, B 

BC3F8 

meas. 

error, σ

Gas 2, 

ID 

G

r

(

plasma clean 

198 

In situ plasma clean 200 1 C4F8 0.1 0.11 

199 

In situ plasma clean 200 1 C2F6 0.64 0.323 

200 

In situ plasma clean 200 1 C3F8 0.43 0.396 

201 

In situ plasma clean 200 1 NF3 0.16 

202 

In situ plasma clean 200 1 C2F6 0.6 0.11 

203 

In situ plasma clean 200 1 C2F6 0.59 0.11 

204 

In situ plasma clean 200 2 C2F6 0.48 0.48 NF3 

205 

In situ plasma clean 200 2 C2F6 0.61 0.35 NF3 

206 

In situ plasma clean 200 1 NF3 0.005 

207 

In situ plasma clean 200 1 C2F6 0.36 

208 

In situ plasma clean 200 1 NF3 0.11 

209 

In situ plasma clean 150 1 CF4 0.95 
Record 

Number 

Emission 

process 

category 

Wafer 

size, 

mm Wt 

Number 

of FGHGs 

used in 

process 

category 

Dominant 

gas, ID 

Dominant 

gas use 

rate, (1-U) 

Dominant 

gas meas. 

error, σ

CF4 

formation 

rate, B 

BCF4 

meas. 

error, σ

C2F6 

formation 

rate, B 

BC2F6 

meas. 

error, σ

C3F8 

formation 

rate, B 

BC3F8 

meas. 

error, σ

Gas 2, 

ID 

G

r

(

210 

Remote plasma clean 200 1 NF3 0.01 

211 

Remote plasma clean 300 1 NF3 0.08 

212 

Remote plasma clean 300 1 NF3 0.01 0.031 

213 

In situ plasma clean 300 1 NF3 0.25 

214 

In situ plasma clean 300 1 NF3 0.29 0.037 

215 

Remote plasma clean 200 1 NF3 0.19 

216 

In situ plasma clean 200 1 NF3 0.01 0.002 

217 

In situ plasma clean 200 1 NF3 0.14 0 

218 

In situ plasma clean 200 1 NF3 0.14 0.18 

219 

In situ plasma clean 200 1 C2F6 0.69 0.11 

220 

In situ plasma clean 200 1 C3F8 0.43 0.13 

221 

In situ plasma clean 200 1 C3F8 0.39 0.11 

222 

In situ plasma 200 1 C4F8O 0.11 0.08 
Record 

Number 

Emission 

process 

category 

Wafer 

size, 

mm Wt 

Number 

of FGHGs 

used in 

process 

category 

Dominant 

gas, ID 

Dominant 

gas use 

rate, (1-U) 

Dominant 

gas meas. 

error, σ

CF4 

formation 

rate, B 

BCF4 

meas. 

error, σ

C2F6 

formation 

rate, B 

BC2F6 

meas. 

error, σ

C3F8 

formation 

rate, B 

BC3F8 

meas. 

error, σ

Gas 2, 

ID 

G

r

(

clean 

223 

In situ plasma clean 200 1 C4F8O 0.15 0.15 0.04 

224 

In situ plasma clean 200 1 C4F8O 0.15 0.15 0.05 

225 

Ash wafer 

clean 300 1 CF4 0.86 

226 

Ash wafer 

clean 300 1 CF4 0.876