# Draft Emission Factors for Refined

**Semiconductor Manufacturing Process Categories**

**U.S. Environmental Protection Agency**

**May 2010**

# Table of Contents

1. Emission Factor Data..........................................................................................................................................................3

2. Emission Factor Development.......................................................................................................................................4

3. Measures Taken to Rectify Gaps in Available Information...................................................5

4. References..........................................................................................................................................................................................7



# Table of Tables

Table 1. Relationship Between Feature Type/Process Descriptor and Film Type

Used by EPA to Form EFs When Film Type Was Not Provided............................................................4

T 

# able 2. Draft Default Emission Factors for Refined Process Categories for

Semiconductor Manufacturing for 150 mm Wafer Size..............................................................................8

Table 3. Draft Default Emission Factors for Refined Process Categories for

Semiconductor Manufacturing for 200 mm Wafer Size...........................................................................10

Table 4. Draft Default Emission Factors for Refined Process Categories for

Semiconductor Manufacturing for 300 mm Wafer Size...........................................................................12

Table 5. EF Development Database..............................................................................................................................14

# 3 In an April 12, 2010 proposed rule, Mandatory Reporting of Greenhouse

Gases: Additional Sources of Fluorinated GHGs (75 FR 18652) EPA put

forth three sets of draft default emission factor (EF) ranges for nine

distinct refined process categories, one set of EF ranges per

production technology generation (i.e., 150 mm, 200 mm, and 300 mm

wafer sizes). Ranges were proposed at that time because EPA had not yet

received sufficient data to select a specific value within each range.

EPA stated in the rule that if additional data were received in a

timely fashion, EPA may develop draft EFs prior to the issuance of a

final rule. EPA has since received additional data to develop draft

EFs. These draft factors, which are again distinguished by the three

wafer sizes, are presented in this report.

1. Emission Factor Data

To develop the draft EFs presented here, EPA used industry data

provided in cooperation with Semiconductor Equipment and Materials

International (SEMI), which redacted identifying company information. 1



# All of the data are compiled in an EF development database. The

complete database is presented in Table 5. The EF data in Table 5,

which is identified by process category and wafer technology, includes

single and multi-gas process chemistries. EF information is provided

for single and multi-gas utilization and by-product formation rates.

The table denotes the dominant gas, the mass fraction emitted and the

by-product formation rates expressed as a mass fraction of the dominant

gas. The table also denotes the mass-emitted fractions of the other

gases used when multiple gases are employed in either chamber cleaning

or film etching emission processes.

Some providers of data identified a broad emission category (i.e.,

chamber cleaning, etching and wafer cleaning) as well as an emission

subcategory. For information pertaining to etching subcategories, for

example, some data-providers identified the film being etched (i.e.,

oxide, nitride, silicon or metal) as well as the feature being etched

(i.e., high aspect ratio trench, via, contact etch, etc.) along with

their preference between the two subcategories for purposes of

estimating emissions.

Some providers identified only an etch feature, some identified only a

film type, and some identified both. When only a feature type was

identified, EPA assigned that EF information to one of the film types.

Table 1 presents the relationship EPA used to map feature etch category

into film type category. (See EPA’s proposed definitions of film type

in the proposed rule, Mandatory Reporting of Greenhouse Gases:

Additional Sources of Fluorinated GHGs (75 FR 18652)).

1 

# See TECHNICAL SUPPORT DOCUMENT (UPDATED) FOR PROCESS EMISSIONS FROM

ELECTRONICS MANUFACTURE (e.g., SEMICONDUCTORS, LIQUID CRYSTAL DISPLAYS,

PHOTOVOLTAICS, AND MICRO-ELECTRO-MECHANICAL SYSTEMS): PROPOSED RULE FOR

MANDATORY REPORTING OF GREENHOUSE GASES for more information.

# 4 **Table 1. Relationship Between Feature Type/Process Descriptor and Film Type**

**Used by EPA to Form EFs When Film Type Was Not Provided**

Feature type/process

descriptor Film type Comment

Trench etch 1 

# Oxide Used for FSG, TEOS,

low k dielectric

films

Via etch 1 

# Oxide Used for FSG, TEOS,

low k dielectric

films

Contact etch Oxide

Pad etch Oxide

Multi level contact

etch Oxide

1 

# Includes high aspect ratio trench and high aspect ratio via etch.



# When only a film type was provided EPA was unable to assign that EF

information to a specific feature-etch subcategory. A consequence of

this omission is that EPA did not receive sufficient information to

develop draft EFs for both feature-etch and film-etch subcategories.

Therefore, in this report only the film-etch subcategory EFs are

provided.

2. Emission Factor Development

The draft EFs are presented in Tables 2, 3, and 4. The EFs are simple

(unweighted) averages developed employing an approach similar to that

used for the 2006 IPCC Guidelines. 2 

# Each entry in the draft table of

EFs represents an average of the appropriate values in Table 5 with

each entry given equal weight. Two conventions used in calculating the

draft EFs merit special mention and are described next, using an

example.

For oxide etch for the 300 mm wafer technology, it is evident in Table

5 that trifluoromethane (CHF 3 

# ) may be the dominant gas or a second gas

in multi-gas chemistries. There are five total entries for 1-U (the

emission rate) when CHF 3 

# is either the dominant gas or the second gas.

The average draft EF reported by EPA for CHF 3 

# for oxide etch for 300 mm

(given in Table 4) is the simple average of the five data entries for

utilization of CHF 3 

# . The approach for determining the CHF 3 

# EF was also

followed for any other gas that was a dominant, second or third gas for

any emission process category.

When forming average by-product-formation emission factors, EPA used

the following procedure. Using CHF 3 

# (oxide etch, 300 mm) again as an

example and referring to Table 5, it is evident that the by-product

2 

# For additional information on the 2006 IPCC factor development

methodology, see Emission Factors for Semiconductor Manufacturing:

Sources, Methods, and Results (February 2006) available in the docket

(EPA–HQ–OAR–2009–0927).

# 5 formation factor appears in one instance — when CHF 3 

# is the dominant

gas for one occurrence. It is also evident that there are five entries

for CHF 3 

# , two when it is the dominant gas and three when it is not the

dominant gas (when hexafluorobutadiene - C 4 

# F 6 

# -is the dominant gas in

those three instances). The single CF 4 

# by-product (BCF 4 

# ) value in Table

5 is divided by five to arrive at the value for BCF 4 

# given in Table 4.

To do otherwise would overstate CF 4 

# by-product formation when

estimating its emissions from CHF 3 

# use.

3. Measures Taken to Rectify Gaps in Available Information

Using the information and rationale described below, EPA has addressed

gaps for 150 mm EF data and 300 mm wafer cleaning EF data. As evident

by the “NA” entries in Tables 2, 3, and 4 (NA denotes not applicable

based on currently available information) and the information presented

in Table 5, there are still gaps in the EF data that is available to

EPA.

150 mm EF Data Gap

Table 5 includes only one value for F-GHG usage during device

manufacture on 150 mm wafers. In the absence of additional data for 150

mm emission process categories, EPA, for the purposes of this NODA, is

assuming that the EFs for 200 mm technologies apply. EPA bases this

assumption on the belief that EFs for 150 mm processing technology are

closer to 200 mm processing technologies than to 300 mm processing

technologies [see Beu (2005)]. Moreover, EPA understands that a portion

of the EFs for 200 mm processing in Table 5 were developed on early 200

mm equipment prior to efforts by device and equipment manufacturers to

reduce F-GHG usage, which occurred during the latter half of the 200 mm

wafer era. The average draft EFs in Table 4 reflect emission

measurements made in the earlier and later portions of the 200 mm wafer

era. 3 

# To apply EFs for 300 mm wafer processing equipment to 150 mm

might result in reported emissions being understated when EFs for 300

mm are smaller than those for 200 mm [see Beu (2005)]. This concern is

supported by comparing the chamber cleaning EFs for 200 mm and 300 mm

technologies. Reports in the 200 mm wafer era indicated that chamber

cleaning accounted for the majority of F-GHG usage.

Wafer Cleaning EF Data Gap (300 mm)

Under the wafer clean category, EPA only received data for ashing for

the 300 mm wafer size. Using the information and rationale described

below, EPA drew an analogy between the developed 300 mm CF 4 

# EF for

ashing and 300 mm bevel cleaning CF 4 

# EF.

3 

# In using the term “200 mm era” EPA is referring to the period during which

the majority of R&D expenditures by device and equipment manufacturers

were directed to 200 mm wafers. Toward the end a wafer technology era, R&D

attention shifted to the next generation of wafer technology, 300 mm

wafers.

# 6 Device manufacturers are using bevel cleaning to improve device yields

by reducing sources of defects caused by particles generated via

flaking or peeling of polymer materials during wafer handling between

processing steps. EPA understands manufacturers are inserting bevel

clean steps into the process flow using a dry (plasma), wet, or

polishing process.

To clean etch by-product polymers or dielectric films at the bevel edge

via a dry (plasma) process, cleaning gas mixtures include O 2 

# and some

amount of a fluorine-containing gas (<10 percent), such as CF 4 

# or SF 6



# .

Plasma-induced chemical etching depends on many factors, including the

nature of the chemical precursor(s) and details of the ionization,

dissociation and excitation that results in the etching process on the

wafer. In short, it is the chemical properties of the feed gas(es) and

physical properties of the reactor design that govern the practice of

chemical etching via plasma [see G. W. Hills and J. M. Cook (2000)].

When the etch tool is designed primarily for isotropic etch, such as

photoresist ash, considerable efforts go to remove ions, electrons and

photons from the incident flux on the wafer, leaving only neutrals (F

atoms, for example) to remove unwanted material(s). This is done to

ensure that the reactions occurring are chemical, that they are not

enhanced by the addition of energy in the form of ion-impact or photon

excitation. [see G. W. Hills and J. M. Cook (2000)]

Bevel cleaning via plasma is an isotropic etching process, analogous to

photoresist ash. EPA, by virtue of this analogy, has assigned the draft

utilization emission factor for CF 4 

# for ashing to the bevel cleaning

wafer cleaning subcategory. The available patent literature for plasmabased bevel cleaning supports this approach in that CF 4 

# is identified

as one of two gases for bevel cleaning. [e.g., see Kim et al. (2009)]

The other gas mentioned for bevel cleaning is SF 6 

# . EPA’s EF database

does not contain gas utilization information for SF 6 

# for ashing or

chamber cleaning (another isotropic etching process). EPA is filling

this gap in SF 6 

# data by using a draft value based on the SF 6 

# utilization

for in situ chamber cleaning provided in the IPCC Good Practice

Guidance and Uncertainty Management in National Greenhouse Gas

Inventories (Chapter 3, Table 3.15). [see IPCC (2000)]

# 7 4. References

Beu (2005), “Reduction of Perfluorocompound (PFC) Emissions: 2005

State-of-the-Technology Report” (Technology Transfer #05104693A-Eng),

December 2005.

F. Burkeen, et al (2007), "Visualizing the Wafer's Edge," KLA-Tencor

YMS Magazine, Winter 2007.

Hills and J. M. Cook (2000), “Plasma Etching” in Handbook of

Semiconductor Manufacturing Technology, ed. Y. Nishi and R.

Doering, Marcel Dekker, Inc., 2000. Available at

http://books.google.com/books?id=Qi98HiTgLEC&pg=PA655&lpg=PA655&dq=Hills+and+Cook+2000+%E2%80%9CPlasma+Etchin

g%E2%80%9D+Handbook+Semiconductor+Manufacturing+Technology&source=bl&ot

s=4nZOJLibok&sig=78C0NSw3kTpa3xZHtr74A3JVxs&hl=en&ei=qVDpS_HJGIOKlwfX4Y

3tCg&sa=X&oi=book_result&ct=result&resnum=1&ved=0CBcQ6AEwAA#v=onepage&q

&f=false. Accessed May 11, 2010.

Intergovernmental Panel on Climate Change (IPCC 2000), “IPCC Good

Practice Guidance and Uncertainty Management in National Greenhouse Gas

Inventories” (Chapter 3, Table 3.15), 2000.

Kim et al (2009). Patent 20070068900A1, March 29, 2007 and Kim et al.

Patent 20090272402A1, November 5, 2009.

# 8 **Table 2. Draft Default Emission Factors for Refined Process Categories**

**for Semiconductor Manufacturing for 150 mm Wafer Size**

**Refined Process**

**Category Process Gas i** 



# CF 4 

# C 2 

# F 6 

# CHF 3 

# CH 2 

# F 2 

# C 3 

# F 8 

# C 4 

# F 8 

# NF 3 

# SF 6 

# C 4 

# F 6 

# C 5 

# F 8 

# C 4 

# F 8 

# O

**PATTERNING/ETCHING**

**Oxide etch**

1-U i 

# 0.66 0.56 0.30 0.093 NA 0.25 NA 0.20 0.14 NA NA

BCF 4 

# NA 0.23 0.030 0.021 NA 0.19 NA NA 0.13 NA NA

BC 2 

# F 6 

# NA NA NA NA NA 0.11 NA NA 0.12 NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**Nitride etch**

1-U i 

# 0.77 NA 0.80 NA NA NA NA NA NA NA NA

BCF 4 

# NA NA NA NA NA NA NA NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**Silicon etch**

1-U i 

# NA NA NA NA NA NA 0.038 NA NA NA NA

BCF 4 

# NA NA NA NA NA NA 0.0040 NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**Metal etch**

1-U i 

# NA NA 0.52 NA NA NA NA NA NA NA NA

BCF 4 

# NA NA 0.018 NA NA NA NA NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**CHAMBER CLEANING**

**In situ plasma cleaning**

1-U i 

# 0.91 0.55 NA NA 0.40 0.10 0.18 NA NA NA 0.14

BCF 4 

# NA 0.19 NA NA 0.20 0.11 0.011 NA NA NA 0.13

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA 0.030

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**Remote plasma cleaning**

1-U i 

# NA NA NA NA NA NA 0.029 NA NA NA NA

BCF 4 

# NA NA NA NA NA NA 0.0047 NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**In situ thermal cleaning**

1-U i 

# NA NA NA NA NA NA NA NA NA NA NA

BCF 4 

# NA NA NA NA NA NA NA NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

# 9 **Refined Process**

**Category Process Gas i** 



# CF 4 

# C 2 

# F 6 

# CHF 3 

# CH 2 

# F 2 

# C 3 

# F 8 

# C 4 

# F 8 

# NF 3 

# SF 6 

# C 4 

# F 6 

# C 5 

# F 8 

# C 4 

# F 8 

# O

**WAFER CLEANING**

**Bevel Cleaning**

1-U i 

# NA NA NA NA NA NA NA NA NA NA NA

BCF 4 

# NA NA NA NA NA NA NA NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**Ashing**

1-U i 

# NA NA NA NA NA NA NA NA NA NA NA

BCF 4 

# NA NA NA NA NA NA NA NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA



# Notes: NA denotes not applicable based on currently available information.

# 10 **Table 3. Draft Default Emission Factors for Refined Process Categories**

**for Semiconductor Manufacturing for 200 mm Wafer Size**

**Refined Process**

**Category Process Gas i** 



# CF 4 

# C 2 

# F 6 

# CHF 3 

# CH 2 

# F 2 

# C 3 

# F 8 

# C 4 

# F 8 

# NF 3 

# SF 6 

# C 4 

# F 6 

# C 5 

# F 8 

# C 4 

# F 8 

# O

**PATTERNING/ETCHING**

**Oxide etch**

1-U i 

# 0.66 0.56 0.30 0.093 NA 0.25 NA 0.20 0.14 NA NA

BCF 4 

# NA 0.23 0.030 0.021 NA 0.19 NA NA 0.13 NA NA

BC 2 

# F 6 

# NA NA NA NA NA 0.11 NA NA 0.12 NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**Nitride etch**

1-U i 

# 0.77 NA 0.80 NA NA NA NA NA NA NA NA

BCF 4 

# NA NA NA NA NA NA NA NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**Silicon etch**

1-U i 

# NA NA NA NA NA NA 0.038 NA NA NA NA

BCF 4 

# NA NA NA NA NA NA 0.0040 NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**Metal etch**

1-U i 

# NA NA 0.52 NA NA NA NA NA NA NA NA

BCF 4 

# NA NA 0.018 NA NA NA NA NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**CHAMBER CLEANING**

**In situ plasma cleaning**

1-U i 

# 0.91 0.55 NA NA 0.40 0.10 0.18 NA NA NA 0.14

BCF 4 

# NA 0.19 NA NA 0.20 0.11 0.011 NA NA NA 0.13

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA 0.030

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**Remote plasma cleaning**

1-U i 

# NA NA NA NA NA NA 0.029 NA NA NA NA

BCF 4 

# NA NA NA NA NA NA 0.0047 NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**In situ thermal cleaning**

1-U i 

# NA NA NA NA NA NA NA NA NA NA NA

BCF 4 

# NA NA NA NA NA NA NA NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

# 11 **Refined Process**

**Category Process Gas i** 



# CF 4 

# C 2 

# F 6 

# CHF 3 

# CH 2 

# F 2 

# C 3 

# F 8 

# C 4 

# F 8 

# NF 3 

# SF 6 

# C 4 

# F 6 

# C 5 

# F 8 

# C 4 

# F 8 

# O

**WAFER CLEANING**

**Bevel cleaning**

1-U i 

# NA NA NA NA NA NA NA NA NA NA NA

BCF 4 

# NA NA NA NA NA NA NA NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**Ashing**

1-U i 

# NA NA NA NA NA NA NA NA NA NA NA

BCF 4 

# NA NA NA NA NA NA NA NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA



# Notes: NA denotes not applicable based on currently available information.

# 12 **Table 4. Draft Default Emission Factors for Refined Process Categories for**

**Semiconductor Manufacturing for 300 mm Wafer Size**

**Refined Process**

**Category Process Gas i** 



# CF 4 

# C 2 

# F 6 

# CHF 3 

# CH 2 

# F 2 

# C 3 

# F 8 

# C 4 

# F 8 

# NF 3 

# SF 6 

# C 4 

# F 6 

# C 5 

# F 8 

# C 4 

# F 8 

# O

**PATTERNING/ETCHING**

**Oxide etch**

1-U i 

# 0.67 0.80 0.52 0.086 NA 0.29 NA NA 0.09 NA NA

BCF 4 

# NA NA 0.0020 0.0015 NA 0.079 NA NA 0.27 NA NA

BC 2 

# F 6 

# NA NA 0.0020 NA NA 0.12 NA NA 0.29 NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**Nitride etch**

1-U i 

# 0.97 NA 0.50 0.24 NA NA 0.23 NA NA NA NA

BCF 4 

# NA NA 0.0030 0.00040 NA NA NA NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**Silicon etch**

1-U i 

# 0.87 NA 0.58 NA NA NA 0.42 0.37 NA NA NA

BCF 4 

# NA NA NA NA NA NA NA NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**Metal etch**

1-U i 

# NA NA 0.16 NA NA NA NA NA NA NA NA

BCF 4 

# NA NA NA NA NA NA NA NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**CHAMBER CLEANING**

**In situ plasma cleaning**

1-U i 

# NA NA NA NA NA NA 0.23 NA NA NA NA

BCF 4 

# NA NA NA NA NA NA 0.0046 NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**Remote plasma cleaning**

1-U i 

# NA NA NA NA 0.063 NA 0.017 NA NA NA NA

BCF 4 

# NA NA NA NA NA NA 0.040 NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**In situ thermal cleaning**

1-U i 

# NA NA NA NA NA NA 0.28 NA NA NA NA

BCF 4 

# NA NA NA NA NA NA 0.010 NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

# 13 **Refined Process**

**Category Process Gas i** 



# CF 4 

# C 2 

# F 6 

# CHF 3 

# CH 2 

# F 2 

# C 3 

# F 8 

# C 4 

# F 8 

# NF 3 

# SF 6 

# C 4 

# F 6 

# C 5 

# F 8 

# C 4 

# F 8 

# O

**WAFER CLEANING**

**Bevel cleaning**

1-U i 

# 0.77 NA NA NA NA NA NA 0.20 NA NA NA

BCF 4 

# NA NA NA NA NA NA NA NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA

**Ashing**

1-U i 

# 0.77 NA NA 0.24 NA NA 0.23 NA NA NA NA

BCF 4 

# NA NA NA NA NA NA NA NA NA NA NA

BC 2 

# F 6 

# NA NA NA NA NA NA NA NA NA NA NA

BC 3 

# F 8 

# NA NA NA NA NA NA NA NA NA NA NA



# Notes: NA denotes not applicable based on currently available information.14**Table 5. EF Development Database**RecordNumberEmissionprocesscategoryWafersize,mmWtNumberof FGHGsused inprocesscategoryDominantgas, IDDominantgas userate, (1-U)Dominantgas meas.error,σCF4formationrate, BBCF4meas.error,σC2F6formationrate, BBC2F6meas.error,σC3F8formationrate, BBC3F8meas.error,σGas 2,IDGas 2userate,(1-U)Gas 2meas.error,σGas 3,IDGas 3userate,(1-U)Gas 3meas.error,σ1Deposition,N2O 300 1 N2O 0.482 0.01422Remoteplasmaclean 300 2 NF3 0.00417 0.000148 N2O 0.811 0.04023 Oxide etch 200 2 CF4 0.722 0.029 CHF3 0.69 0.01484Remoteplasmaclean 300 1 NF3 0.015Remoteplasmaclean 300 1 NF3 0.016In situplasmaclean 200 1 NF3 0.117In situplasmaclean 300 1 NF3 0.138 Oxide etch 300 49 Oxide etch 200 1 CF4 0.8 0.025110 Oxide etch 200 2 CF4 0.49 0.0574 CHF3 0.701 0.0098511Remoteplasmaclean 300 2 NF3 0.00902 0.000948 0.788 0.14 N2O 0.5 0.013612Deposition,N2O 300 1 N2O 0.153 0.0084513Remoteplasmaclean 300 1 NF3 0.0443 0.000416 0.001050.00063814Remoteplasmaclean 300 1 NF3 0.00881 0.00101 0.0485 0.013915Remoteplasmaclean 200 1 NF3 0.0425 0.0117 0.0115 0.00315RecordNumberEmissionprocesscategoryWafersize,mmWtNumberof FGHGsused inprocesscategoryDominantgas, IDDominantgas userate, (1-U)Dominantgas meas.error,σCF4formationrate, BBCF4meas.error,σC2F6formationrate, BBC2F6meas.error,σC3F8formationrate, BBC3F8meas.error,σGas 2,IDGas 2userate,(1-U)Gas 2meas.error,σGas 3,IDGas 3userate,(1-U)Gas 3meas.error,σ16In situplasmaclean 300 1 NF3 0.3517In situplasmaclean 300 1 NF3 0.2118Remoteplasmaclean 300 1 NF3 0.0119In situplasmaclean 300 1 NF3 0.101 0.0018420Remoteplasmaclean 300 1 NF3 0.00902 0.000948 0.788 0.1421In situplasmaclean 200 1 NF3 0.1122In situplasmaclean 200 1 NF3 0.1423Remoteplasmaclean 200 1 NF3 0.0124In situplasmaclean 200 1 NF3 0.1625In situplasmaclean 300 1 NF3 0.2426Remoteplasmaclean 300 1 NF3 0.0238 0.0052 0.063 0.0028227Remoteplasmaclean 300 2 NF3 0.0134 0.000834 N2O 0.753 0.019928 Oxide etch 200 1 C2F6 0.555 0.0069 0.0814 0.0005729 Remote 300 1 NF3 0.00199 0.000057 0.00147 1.65E-16RecordNumberEmissionprocesscategoryWafersize,mmWtNumberof FGHGsused inprocesscategoryDominantgas, IDDominantgas userate, (1-U)Dominantgas meas.error,σCF4formationrate, BBCF4meas.error,σC2F6formationrate, BBC2F6meas.error,σC3F8formationrate, BBC3F8meas.error,σGas 2,IDGas 2userate,(1-U)Gas 2meas.error,σGas 3,IDGas 3userate,(1-U)Gas 3meas.error,σplasmaclean80530 Oxide etch 200 1 C4F6 0.119 0.00575 0.0686 0.00514 0.0382 0.0016131Deposition,N2O 200 1 N2O 0.7532Deposition,N2O 300 1 N2O 0.8233Remoteplasmaclean 300 1 NF3 0.004 0.0002 0.0016 0.000434In situthermalchamberclean 300 0.9 1 NF3 0.28 0.014 0.01 0.002535In situplasmaclean 300 0.9 1 NF3 0.2336Nitrideetch 300 0.9 1 CHF3 0.252 0.00637Nitrideetch 300 0.9 1 NF3 0.2338Nitrideetch 300 0.9 1 CH2F2 0.24 0.0004 0.00239Ash waferclean 300 0.9 1 CF4 0.587 NF3 0.23 CH2F2 0.2440 Oxide etch 300 0.9 1 C4F8 0.17 0.14 0.03 0.023 0.01 0.01241 Oxide etch 300 0.9 1 CHF3 0.25 0.12 0.01 0.0142 Oxide etch 300 0.9 1 CH2F2 0.14 0.00343 Oxide etch 200 1 C4F6 0.0599 0.0113 0.017 0.00079 0.03120.00036844 Oxide etch 200 1 C4F6 0.0364 0.00181 0.03770.000572 0.0576 0.0007945Nitrideetch 200 2 CF4 0.665 0.00557 CHF3 0.8 0.58646Remoteplasmaclean 300 1 NF3 0.0517RecordNumberEmissionprocesscategoryWafersize,mmWtNumberof FGHGsused inprocesscategoryDominantgas, IDDominantgas userate, (1-U)Dominantgas meas.error,σCF4formationrate, BBCF4meas.error,σC2F6formationrate, BBC2F6meas.error,σC3F8formationrate, BBC3F8meas.error,σGas 2,IDGas 2userate,(1-U)Gas 2meas.error,σGas 3,IDGas 3userate,(1-U)Gas 3meas.error,σ47In situplasmaclean 200 1 NF3 0.0948In situplasmaclean 200 1 NF3 0.1249 Oxide etch 200 2 C4F6 0.21 0.357 CF4 0.8350 Oxide etch 200 3 C4F6 0.6 0.571 CF4 0.92 CHF3 0.2551Nitrideetch 200 1 CF4 0.9752 Oxide etch 200 2 C4F8 0.12 0.27 0.167 SF6 0.253 Oxide etch 200 2 C4F8 0.16 0.56 0.167 CHF3 0.3254 Oxide etch 200 1 C4F6 0.162 0.429 0.07155 Oxide etch 200 1 CHF3 0.3 0.2556 Oxide etch 200 1 Ch2F2 0.32 0.03157 Oxide etch 200 1 CF4 0.4658 Oxide etch 300 3 C4F6 0.032 0.143 CH2F2 0.032 CF4 0.57759 Oxide etch 300 3 C4F6 0.08 0.66 CHF3 0.32 CF4 0.5160Nitrideetch 200 2 CF4 0.66 CHF3 0.861 Oxide etch 200 1 C4F6 0.12 0.069 0.03862 Oxide etch 200 2 C4F6 0.04 0.04 0.056 CH2F2 0.0663 Oxide etch 200 1 C4F6 0.06 0.017 0.05664 Oxide etch 200 1 C2F6 0.56 0.1165 Oxide etch 200 1 C4F6 0.0737 0.53466Siliconetch 300 1 NF3 0.41867 Oxide etch 200 2 C4F6 0.021 0.257 CH2F2 0.10868 Oxide etch 200 1 C2F6 0.266 0.41869Siliconetch 300 1 CF4 0.91170 Metal etch 200 1 CHF3 0.516 0.01818RecordNumberEmissionprocesscategoryWafersize,mmWtNumberof FGHGsused inprocesscategoryDominantgas, IDDominantgas userate, (1-U)Dominantgas meas.error,σCF4formationrate, BBCF4meas.error,σC2F6formationrate, BBC2F6meas.error,σC3F8formationrate, BBC3F8meas.error,σGas 2,IDGas 2userate,(1-U)Gas 2meas.error,σGas 3,IDGas 3userate,(1-U)Gas 3meas.error,σ71Siliconetch 200 1 NF3 0.0379 0.00472 Oxide etch 300 1 C4F6 0.091 0.32 0.17873 Oxide etch 300 1 C4F6 0.12 0.325 0.15574 Oxide etch 300 2 CHF3 0.451 CF4 0.9275 Oxide etch 300 2 C4F6 0.095 0.509 0.305 CHF3 0.76976 Oxide etch 300 2 C4F6 0.11 0.474 0.305 CHF3 0.78977Siliconetch 300 1 CF4 0.86278Siliconetch 300 3 SF6 0.365 CHF3 0.575 CF4 0.84579 Metal etch 300 1 CHF3 0.15880 Oxide etch 200 3 C4F8 0.381 0.126 CHF3 0.345 C2F6 0.65981 Oxide etch 200 1 C4F8 0.105 0.069 0.01182 Oxide etch 300 2 C4F8 0.46 0.206 C2F6 0.77983 Oxide etch 300 2 C4F8 0.235 0.338 C2F6 0.81184Nitrideetch 300 2 CHF3 0.741 CF4 0.97485 Oxide etch 200 2 C2F6 0.773 0.547 C4F8 0.36186 Oxide etch 200 3 C4F8 0.431 0.271 CHF3 0.4 CF4 0.87587 Oxide etch 200 2 C4F8 0.364 0.151 0.377 CHF3 0.2588 Oxide etch 200 2 C4F8 0.128 0.049 CF4 0.19289 Oxide etch 200 2 CHF3 0.2 0.049 CH2F2 0.0690 Oxide etch 200 2 CH2F2 0.025 0.135 CHF3 0.1891 Oxide etch 200 2 C4F8 0.182 0.238 0.031 CH2F2 0.06992 Oxide etch 200 2 CHF3 0.103 0.021 CH2F2 0.06293 Oxide etch 200 2 CHF3 0.1 0.041 CH2F2 0.04294 Oxide etch 200 1 CHF3 0.105 0.03595In situplasmaclean 200 1 CF4 0.9519RecordNumberEmissionprocesscategoryWafersize,mmWtNumberof FGHGsused inprocesscategoryDominantgas, IDDominantgas userate, (1-U)Dominantgas meas.error,σCF4formationrate, BBCF4meas.error,σC2F6formationrate, BBC2F6meas.error,σC3F8formationrate, BBC3F8meas.error,σGas 2,IDGas 2userate,(1-U)Gas 2meas.error,σGas 3,IDGas 3userate,(1-U)Gas 3meas.error,σ96Remoteplasmaclean 200 1 NF3 0.08797Remoteplasmaclean 200 1 NF3 0.11298Remoteplasmaclean 200 1 NF3 0.17299Remoteplasmaclean 300 1 NF3 0.014100Remoteplasmaclean 300 1 NF3 0.0196101Remoteplasmaclean 300 1 NF3 0.0132102Remoteplasmaclean 300 1 NF3 0.0143103Remoteplasmaclean 200 1 NF3 0.04104In situplasmaclean 200 1 C2F6 0.43 0.17105In situplasmaclean 200 1 C2F6 0.36 0.2076106In situplasmaclean 200 1 CF4 0.857107In situplasmaclean 200 1 CF4 0.9346108In situplasma 200 1 CF4 0.89420RecordNumberEmissionprocesscategoryWafersize,mmWtNumberof FGHGsused inprocesscategoryDominantgas, IDDominantgas userate, (1-U)Dominantgas meas.error,σCF4formationrate, BBCF4meas.error,σC2F6formationrate, BBC2F6meas.error,σC3F8formationrate, BBC3F8meas.error,σGas 2,IDGas 2userate,(1-U)Gas 2meas.error,σGas 3,IDGas 3userate,(1-U)Gas 3meas.error,σclean109Remoteplasmaclean 200 1 NF3 0.024110Remoteplasmaclean 200 1 NF3 0.0226111Remoteplasmaclean 200 1 NF3 0.0196112Remoteplasmaclean 200 1 NF3 0.013113Remoteplasmaclean 200 1 NF3 0.0065114Remoteplasmaclean 200 1 NF3 0.0111115Remoteplasmaclean 200 1 NF3 0.0111116Remoteplasmaclean 200 1 NF3 0.033117Remoteplasmaclean 200 1 NF3 0.017118Remoteplasmaclean 200 1 NF3 0.01 0.005119Remoteplasmaclean 300 1 NF3 0.026 0.036120Remoteplasmaclean 300 1 NF3 0.0123121 Remote 300 1 NF3 0.01 0.00921RecordNumberEmissionprocesscategoryWafersize,mmWtNumberof FGHGsused inprocesscategoryDominantgas, IDDominantgas userate, (1-U)Dominantgas meas.error,σCF4formationrate, BBCF4meas.error,σC2F6formationrate, BBC2F6meas.error,σC3F8formationrate, BBC3F8meas.error,σGas 2,IDGas 2userate,(1-U)Gas 2meas.error,σGas 3,IDGas 3userate,(1-U)Gas 3meas.error,σplasmaclean122Remoteplasmaclean 300 1 NF3 0.01 0.006123Remoteplasmaclean 300 1 NF3 0.02 0.005124Remoteplasmaclean 200 1 NF3 0.02125Remoteplasmaclean 300 1 NF3 0.0082126Remoteplasmaclean 300 1 NF3 0.0138 0.002127Remoteplasmaclean 300 1 NF3 0.011 0.009128Remoteplasmaclean 300 1 NF3 0.0141129Remoteplasmaclean 300 1 NF3 0.0041130Remoteplasmaclean 300 1 NF3 0.0048131Remoteplasmaclean 300 1 C3F8 0.08132Remoteplasmaclean 300 1 C3F8 0.04133Remoteplasmaclean 300 1 C3F8 0.0722RecordNumberEmissionprocesscategoryWafersize,mmWtNumberof FGHGsused inprocesscategoryDominantgas, IDDominantgas userate, (1-U)Dominantgas meas.error,σCF4formationrate, BBCF4meas.error,σC2F6formationrate, BBC2F6meas.error,σC3F8formationrate, BBC3F8meas.error,σGas 2,IDGas 2userate,(1-U)Gas 2meas.error,σGas 3,IDGas 3userate,(1-U)Gas 3meas.error,σ134Remoteplasmaclean 300 1 NF3 0.006 0.001135Remoteplasmaclean 300 1 NF3 0.047 0.036136Remoteplasmaclean 200 1 NF3 0.04137Remoteplasmaclean 300 1 NF3 0.0137138Remoteplasmaclean 300 1 NF3 0.0229139In situplasmaclean 200 2 C2F6 0.6006 0.15 NF3 0.2851140Remoteplasmaclean 200 1 NF3 0.0156141Remoteplasmaclean 200 1 NF3 0.02 0.005142Remoteplasmaclean 200 1 NF3 0.0059 0.0002143Remoteplasmaclean 200 1 NF3 0.037 0.009144Remoteplasmaclean 300 1 NF3 0.0138 0.002145Remoteplasmaclean 300 1 NF3 0.0058 0.001146Remoteplasma 200 1 NF3 0.0038 0.01223RecordNumberEmissionprocesscategoryWafersize,mmWtNumberof FGHGsused inprocesscategoryDominantgas, IDDominantgas userate, (1-U)Dominantgas meas.error,σCF4formationrate, BBCF4meas.error,σC2F6formationrate, BBC2F6meas.error,σC3F8formationrate, BBC3F8meas.error,σGas 2,IDGas 2userate,(1-U)Gas 2meas.error,σGas 3,IDGas 3userate,(1-U)Gas 3meas.error,σclean147Remoteplasmaclean 200 1 NF3 0.018 0.031148Remoteplasmaclean 200 1 NF3 0.0016 0.045149In situplasmaclean 200 2 C2F6 0.6744 0.15 NF3 0.359150Remoteplasmaclean 200 1 NF3 0.0452 0.013151Remoteplasmaclean 200 1 NF3 0.0542 0.006152Remoteplasmaclean 200 1 NF3 0.0897 0.011153In situplasmaclean 200 2 C2F6 0.51 0.15 NF3 0.38154Remoteplasmaclean 300 1 NF3 0.0032 0.048155Remoteplasmaclean 300 1 NF3 0.0038 0.042156Remoteplasmaclean 300 1 NF3 0.0048 0.09157Remoteplasmaclean 300 1 NF3 0.03 0.005158Remoteplasmaclean 300 1 NF3 0.0029 0.006159 Remote 300 1 NF3 0.0043 0.09424RecordNumberEmissionprocesscategoryWafersize,mmWtNumberof FGHGsused inprocesscategoryDominantgas, IDDominantgas userate, (1-U)Dominantgas meas.error,σCF4formationrate, BBCF4meas.error,σC2F6formationrate, BBC2F6meas.error,σC3F8formationrate, BBC3F8meas.error,σGas 2,IDGas 2userate,(1-U)Gas 2meas.error,σGas 3,IDGas 3userate,(1-U)Gas 3meas.error,σplasmaclean160In situplasmaclean 200 1 NF3 0.762 0.019161Remoteplasmaclean 200 1 NF3 0.0115 0.005162Remoteplasmaclean 300 1 NF3 0.013 0.076163Remoteplasmaclean 300 1 NF3 0.007 0.035164Remoteplasmaclean 300 1 NF3 0.003 0.002165Remoteplasmaclean 200 1 NF3 0.004 0.043166Remoteplasmaclean 200 1 NF3 0.008 0.027167Remoteplasmaclean 300 1 NF3 0.004 0.014168Remoteplasmaclean 200 1 NF3 0.003169Remoteplasmaclean 200 1 NF3 0.01170Remoteplasmaclean 200 1 NF3 0.033171Remoteplasmaclean 200 1 NF3 0.00325RecordNumberEmissionprocesscategoryWafersize,mmWtNumberof FGHGsused inprocesscategoryDominantgas, IDDominantgas userate, (1-U)Dominantgas meas.error,σCF4formationrate, BBCF4meas.error,σC2F6formationrate, BBC2F6meas.error,σC3F8formationrate, BBC3F8meas.error,σGas 2,IDGas 2userate,(1-U)Gas 2meas.error,σGas 3,IDGas 3userate,(1-U)Gas 3meas.error,σ172Remoteplasmaclean 200 1 NF3 0.005173Remoteplasmaclean 200 1 NF3 0.003174Remoteplasmaclean 200 1 NF3 0.003175Remoteplasmaclean 300 1 NF3 0.0076176Remoteplasmaclean 300 1 NF3 0.009177Remoteplasmaclean 300 1 NF3 0.0071178Remoteplasmaclean 200 1 NF3 0.0017179Remoteplasmaclean 200 1 NF3 0.04180Remoteplasmaclean 200 1 NF3 0.003181Remoteplasmaclean 200 1 NF3 0.01182Remoteplasmaclean 200 1 NF3 0.002183Remoteplasmaclean 200 1 NF3 0.04184Remoteplasma 200 1 NF3 0.002126RecordNumberEmissionprocesscategoryWafersize,mmWtNumberof FGHGsused inprocesscategoryDominantgas, IDDominantgas userate, (1-U)Dominantgas meas.error,σCF4formationrate, BBCF4meas.error,σC2F6formationrate, BBC2F6meas.error,σC3F8formationrate, BBC3F8meas.error,σGas 2,IDGas 2userate,(1-U)Gas 2meas.error,σGas 3,IDGas 3userate,(1-U)Gas 3meas.error,σclean185Remoteplasmaclean 300 1 NF3 0.032186Remoteplasmaclean 200 1 NF3 0.02 0.006187Remoteplasmaclean 200 1 NF3 0.01188Remoteplasmaclean 300 1 NF3 0.01 0.004189Remoteplasmaclean 300 1 NF3 0.006190Remoteplasmaclean 200 1 NF3 0.04 0.009191Remoteplasmaclean 300 1 NF3 0.013192Remoteplasmaclean 300 1 NF3 0.1933193Remoteplasmaclean 300 1 NF3 0.002194Remoteplasmaclean 200 1 NF3 0.02195Remoteplasmaclean 300 1 NF3 0.002 0.001196In situplasmaclean 200 1 C2F6 0.54 0.15197 In situ 200 1 C3F8 0.34 0.1727RecordNumberEmissionprocesscategoryWafersize,mmWtNumberof FGHGsused inprocesscategoryDominantgas, IDDominantgas userate, (1-U)Dominantgas meas.error,σCF4formationrate, BBCF4meas.error,σC2F6formationrate, BBC2F6meas.error,σC3F8formationrate, BBC3F8meas.error,σGas 2,IDGas 2userate,(1-U)Gas 2meas.error,σGas 3,IDGas 3userate,(1-U)Gas 3meas.error,σplasmaclean198In situplasmaclean 200 1 C4F8 0.1 0.11199In situplasmaclean 200 1 C2F6 0.64 0.323200In situplasmaclean 200 1 C3F8 0.43 0.396201In situplasmaclean 200 1 NF3 0.16202In situplasmaclean 200 1 C2F6 0.6 0.11203In situplasmaclean 200 1 C2F6 0.59 0.11204In situplasmaclean 200 2 C2F6 0.48 0.48 NF3 0.1205In situplasmaclean 200 2 C2F6 0.61 0.35 NF3 0.1206In situplasmaclean 200 1 NF3 0.005207In situplasmaclean 200 1 C2F6 0.36208In situplasmaclean 200 1 NF3 0.11209In situplasmaclean 150 1 CF4 0.9528RecordNumberEmissionprocesscategoryWafersize,mmWtNumberof FGHGsused inprocesscategoryDominantgas, IDDominantgas userate, (1-U)Dominantgas meas.error,σCF4formationrate, BBCF4meas.error,σC2F6formationrate, BBC2F6meas.error,σC3F8formationrate, BBC3F8meas.error,σGas 2,IDGas 2userate,(1-U)Gas 2meas.error,σGas 3,IDGas 3userate,(1-U)Gas 3meas.error,σ210Remoteplasmaclean 200 1 NF3 0.01211Remoteplasmaclean 300 1 NF3 0.08212Remoteplasmaclean 300 1 NF3 0.01 0.031213In situplasmaclean 300 1 NF3 0.25214In situplasmaclean 300 1 NF3 0.29 0.037215Remoteplasmaclean 200 1 NF3 0.19216In situplasmaclean 200 1 NF3 0.01 0.002217In situplasmaclean 200 1 NF3 0.14 0218In situplasmaclean 200 1 NF3 0.14 0.18219In situplasmaclean 200 1 C2F6 0.69 0.11220In situplasmaclean 200 1 C3F8 0.43 0.13221In situplasmaclean 200 1 C3F8 0.39 0.11222In situplasma 200 1 C4F8O 0.11 0.0829RecordNumberEmissionprocesscategoryWafersize,mmWtNumberof FGHGsused inprocesscategoryDominantgas, IDDominantgas userate, (1-U)Dominantgas meas.error,σCF4formationrate, BBCF4meas.error,σC2F6formationrate, BBC2F6meas.error,σC3F8formationrate, BBC3F8meas.error,σGas 2,IDGas 2userate,(1-U)Gas 2meas.error,σGas 3,IDGas 3userate,(1-U)Gas 3meas.error,σclean223In situplasmaclean 200 1 C4F8O 0.15 0.15 0.04224In situplasmaclean 200 1 C4F8O 0.15 0.15 0.05225Ash waferclean 300 1 CF4 0.86226Ash waferclean 300 1 CF4 0.876