# Patent

## Title
Wafer-scale cluster image sensor chip and method with replicated gapless pixel line and signal readout circuit segments

## Abstract

A multi-pixel row wafer-scale cluster image sensor chip (WCISC) is proposed. Expressed in X-Y-Z coordinates with its pixel rows along X-axis, the WCISC converts areal image frame (IMFM) into areal image frame signal (AIFS). The WCISC includes multiple imaging pixel rows PXRW1, . . . , PXRWM. Each PXRWi has photoelectrical sensing elements spanning pixel row width PRWi and producing a pixel row image signal PRISi. Each PXRWi is offset from PXRW1 by distance XOFSTi and spaced from PXRWi−1 by distance SPi−1,I such that X- and Y-extremities of (PXRW1, . . . , PXRWM) define IMFM. The WCISC is so configured that any image pixel sweeping through IMFM will be sensed by at least one imaging pixel row. In the presence of Y-directional relative motion between WCISC and IMFM and an external electronic imaging controller (EEIC) interfacing with the WCISC, the EEIC can extract all PRISi from WCISC and reconstruct the AIFS.

## Background
CROSS REFERENCE TO RELATED APPLICATION
This invention is related to the following previously filed US patent application:

    
    
        Title: “Wafer-scale Linear Image Sensor Chip and Method with Replicated Gapless Pixel Line and Signal Readout Circuit Segments” by Weng-Lyang Wang, Shengmin Lin, Chi-Pin Lin, Feng-Ke Hsiao with U.S. patent application Ser. No. 12/506,254 and hereinafter referred to as U.S. Ser. No. 12/506,254

whose contents are incorporated herein by reference for any and all purposes.

    
    


BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to electronic imaging. More particularly, the present invention is related to the structural design of a wafer-scale cluster image sensor chip and method of making.
2. Related Background Art
An important trend of electronic imaging with an areal image sensor chip is the increase of total imaging field size while preserving high pixel-pixel registration accuracy within the chip, ideally absent of any anomalous inter-pixel gaps. Other than a fundamental limitation imposed upon the total imaging field size by the semiconductor wafer size, another potential indirect limitation on the total imaging field size comes from a maximum allowable imaging field size (MIFS) of a wafer processing foundry fabricating the semiconductor wafer and this was already illustrated in U.S. Ser. No. 12/506,254. More specifically, the MIFS is the maximum allowable single imaging field size of a precision step-and-repeat photolithographic imaging equipment defining the specific integrated circuit pattern to be created out of the wafer. Here, a specific MIFS is characterized by a maximum allowable imaging field size MIFSX along the X-direction and a maximum allowable imaging field size MIFS along the Y-direction. Similar to U.S. Ser. No. 12/506,254 however further extended to areal imaging, the primary object of the present invention to provide an areal cluster image sensor chip for a large imaging field size exceeding the MIFS without anomalous inter-pixel gaps while avoiding the problem of low wafer imaging throughput associated with wafer stitching technology.
SUMMARY OF THE INVENTION
A multi-pixel row wafer-scale cluster image sensor chip (WCISC) is proposed. Expressed in an X-Y-Z Cartesian coordinate system with pixel rows of the WCISC oriented along X-axis and its principal chip surface lying in X-Y plane, the WCISC photoelectrically converts an areal image frame (IMFM) of width IFW and height IFH in X-Y plane into an areal image frame signal (AIFS). The WCISC includes:
A number of imaging pixel rows PXRW1, PXRW2, . . . , PXRWi, . . . , PXRWM. Each pixel row PXRWi has numerous photoelectrical sensing elements (PESE) spanning a pixel row width PRWi and producing a corresponding pixel row image signal PRISi. Each PXRWi is:


    
    
        a) Offset from PXRW1 along X-direction by a distance XOFSTi.
        b) Spaced from PXRWi−1 along Y-direction by a distance SPi−1,i.

Such that the X- and Y-extremities of (PXRW1, . . . , PXRWM) define the IMFM. The widths PRWi and distances XOFSTi are also chosen such that any image pixel sweeping through the IMFM along Y-direction will cross hence will be photoelectrically sensed by at least one imaging pixel row. As a result:

        1. In the presence of a Y-directional relative motion between WCISC and IMFM and an external electronic imaging controller (EEIC) interfacing with the WCISC, the EEIC can extract all the PRISi from the WCISC and reconstruct the AIFS.
        2. Owing to its configurational flexibility, the WCISC can be made with correspondingly higher wafer level yield thus lower cost.
    
    


Under a more specific class of embodiments (PRW1=PRW2= . . . =PRWM) and (XOFST2=XOFST3= . . . =XOFSTM=0). Each PXRWi photoelectrically converts a pixel line image (PLI) of width PRWi into the PRISi. Importantly, each PXRWi is made of an X-direction linear array of contiguous sensor segments SS1, SS2, . . . , SSj, . . . , SSN (N>1) spaced at a scribe pitch (SCP). Each SSj further includes:

    
    
        c) A gapless local pixel line segment (LPLSj) of PESEj1, PESEj2, . . . , PESEjk, . . . , PESEjP (P>=1) spaced at a sensor element pitch (SEP) for:
        
            c1) Converting a corresponding local segment of the PRISi into a raw image segment signal set (RISSj).
            c2) Forming a gapless global pixel line (GPL) corresponding to the PRISi.
        
        
        d) A readout circuit segment (RCSj) coupled to the LPLSj for processing the RISSj into a readout image segment signal set (ROSSj). The RCSj further includes a set of contact pads (CTPj) for off-chip signal interconnection.

Each SSj has the same structure in that each LPLSj and each RCSj are replicated across SS1, SS2, . . . , SSN. Thus, upon a pre-determined configuration of off-chip interconnection of the contact pad set (CTP1, . . . , CTPN) so as to compose the (ROSS1, . . . , ROSSN) into the PRISi, each PXRWi functions as a key imaging portion of the WCISC.

    
    


In a more detailed embodiment, each PXRWi further includes two dicing margins DCM1 and DCMN located respectively contiguous to SS1 and SSN.
To maintain a good lithographic mask imaging throughput during its wafer manufacturing process, each SSj is sized to be within a maximum allowable imaging field size of a step-and-imaging equipment while the range of X-extremities of (PXRW1, . . . , PXRWM) is allowed to exceed the maximum allowable imaging field size. Likewise, PXRW1, . . . , PXRWM are also configured such that the range of Y-extremities of (PXRW1, . . . , PXRWM) is less than a maximum allowable imaging field size of a step-and-imaging equipment.
In a more detailed embodiment, each RCSj further includes P pixel readout circuits PRCjk (k=1, 2, . . . , P) each respectively coupled to a corresponding PESEjk. At least one pair of neighboring pixel readout circuits PRCjk, PRCjk+1 are, referencing the Y-direction, placed at the opposite side of the LPLSj so as to relieve an X-direction circuit integration density of the RCSj.
In a more detailed embodiment, each PESEjk is a photodiode and each PRCjk further includes a transfer control switch and a feedback-loop operational amplifier both coupled to the photodiode plus an in-pixel correlated double sampling (CDS) circuit.
In a more specific embodiment, the EEIC is configured to extract all the PRISi from the WCISC in parallel so as to reconstruct the AIFS with a correspondingly higher imaging throughput.
In another more specific embodiment, the WCISC further includes a set of row-specific color filters atop the PXRW1, PXRW2, . . . , PXRWi, . . . , PXRWM so as to make the EEIC a color IMFM imager.
Under an even more specific embodiment, the number of imaging pixel rows M is from about 3 to about 10. The SEP ranges from about 5 micron to about 100 micron. The number of photoelectrical sensing elements P ranges from about 100 to about 1000000.
These aspects of the present invention and their numerous embodiments are further made apparent, in the remainder of the present description, to those of ordinary skill in the art.



BRIEF DESCRIPTION OF THE DRAWINGS
In order to more fully describe numerous embodiments of the present invention, reference is made to the accompanying drawings. However, these drawings are not to be considered limitations in the scope of the invention, but are merely illustrative:
FIG. 1 illustrates an example of the present invention multi-pixel row wafer-scale cluster image sensor chip;
FIG. 2 is a top level system block diagram illustrating electronic areal imaging using the present invention multi-pixel row wafer-scale cluster image sensor chip;
FIG. 3 illustrates an areal image frame to be scanned using the example of the present invention multi-pixel row wafer-scale cluster image sensor chip;
FIG. 4A through FIG. 4E illustrate an excerpted sequence of scanning the areal image frame till completion using the example of the present invention multi-pixel row wafer-scale cluster image sensor chip;
FIG. 5A through FIG. 5C are some key figures excerpted from U.S. Ser. No. 12/506,254 closely related to the present invention;
FIG. 6A illustrates another specific embodiment of the present invention multi-pixel row wafer-scale cluster image sensor chip; and
FIG. 6B illustrates a third embodiment of the present invention multi-pixel row wafer-scale cluster image sensor chip in a two-dimensional layout at the wafer level.



DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
The description above and below plus the drawings contained herein merely focus on one or more currently preferred embodiments of the present invention and also describe some exemplary optional features and/or alternative embodiments. The description and drawings are presented for the purpose of illustration and, as such, are not limitations of the present invention. Thus, those of ordinary skill in the art would readily recognize variations, modifications, and alternatives. Such variations, modifications and alternatives should be understood to be also within the scope of the present invention.
FIG. 1 illustrates an example of the present invention multi-pixel row wafer-scale cluster image sensor chip. The example 4-pixel row wafer-scale cluster image sensor chip (WCISC) 10 has its four pixel rows oriented along X-axis and its principal chip surface lying in X-Y plane. It is important to point out that the 4-pixel row WCISC 10 is processed, selected then separated from, after a successful wafer level functionality verification, a base wafer 1. As a remark, the chip separation can be effected through mechanical dicing or laser cutting. The 4-pixel row WCISC 10 photoelectrically converts an areal image frame (IMFM) of width IFW and height IFH in X-Y plane into an areal image frame signal (AIFS). The 4-pixel row WCISC 10 includes four imaging pixel rows PXRW1 11, PXRW2 12, PXRW3 13 and PXRW4 14. As will be presently described in more detail, each pixel row PXRWi contains numerous photoelectrical sensing elements (PESE) spanning a pixel row width PRWi and producing a corresponding pixel row image signal PRISi. In this example:

    
    
        The imaging pixel rows PXRW1 11, PXRW2 12, PXRW3 13 and PXRW4 14 have respective pixel row widths PRW1, PRW2, PRW3, PRW4.
        The imaging pixel rows PXRW2 12, PXRW3 13 and PXRW4 14 are respectively offset from the imaging pixel row PXRW1 11 along X-direction by distances XOFST2, XOFST3, XOFST4.
        Along the Y-direction, the neighboring imaging pixel rows are respectively spaced from each other by distances SP2, SP3, SP4.

Thus, the Y-extremities of PXRW1 11 and PXRW4 14 define the IFH while the X-extremities of PXRW1 11 and PXRW3 13 define the IFW. While the edges of the 4-pixel row WCISC 10 are rectangular in shape, its functionality verified imaging pixel rows PXRW1 11, PXRW2 12, PXRW3 13 and PXRW4 14 can be configurationally quite irregular as demonstrated in this example. To those skilled in the art, owing to its configurational flexibility the 4-pixel row WCISC 10 can therefore be made with correspondingly higher wafer level yield thus lower cost. Notwithstanding this advantage, the above pixel row widths PRW1, PRW2, PRW3, PRW4 and offset distances XOFST2, XOFST3, XOFST4 should still be chosen such that any image pixel sweeping through the IMFM along Y-direction will cross hence will be photoelectrically sensed by at least one imaging pixel row. for example, while a sweeping image pixel 22 will cross imaging pixel rows PXRW2 12, PXRW3 13, PXRW4 14, another sweeping image pixel 21 will only cross a single imaging pixel row PXRW3 13. Consequently, in the presence of a Y-directional relative motion between the 4-pixel row WCISC 10 and IMFM and an external electronic imaging controller (EEIC) interfacing with the 4-pixel row WCISC 10, the EEIC can extract all the PRISi from the 4-pixel row WCISC 10 and reconstruct the AIFS with a single Y-scan.

    
    


FIG. 2 is a top level system block diagram illustrating electronic imaging of an IMFM 40 using the example 4-pixel row WCISC 10 under the present invention. An external electronic imaging controller (EEIC) 30 is provided that interfaces with the 4-pixel row WCISC 10. Additionally, an image data buffer 32 and an image data readout 34 are also provided to receive the pixel row image signals PRIS1, PRIS2, PRIS3, PRIS4 from the 4-pixel row WCISC 10, reconstruct and read out the AIFS under the control of the external electronic imaging controller (EEIC) 30.
FIG. 3 is a side-by-side illustration of the IMFM 40 to be scanned together with the 4-pixel row WCISC 10. The specific image of the IMFM 40 is a large capital letter “A”. FIG. 4A through FIG. 4E illustrate an excerpted sequence of scanning the areal IMFM 40 of large capital letter “A” till completion using the example 4-pixel row WCISC 10 together with the other elements of the top level system block diagram depicted in FIG. 2. In FIG. 4A the 4-pixel row WCISC 10 has moved to a scan position YA along the Y-axis with respect to the IMFM 40 with the pixel row image signals (PRIS3, PRIS4) from imaging pixel rows (PXRW3 13, PXRW4 14) forming a composite pixel row image signal CPRISA to the image data buffer 32 having a cumulative buffered image data CBIDA. In FIG. 4B the 4-pixel row WCISC 10 has moved to a scan position YB along the Y-axis with respect to the IMFM 40 with the pixel row image signals (PRIS2, PRIS3, PRIS4) from imaging pixel rows (PXRW2 12, PXRW3 13, PXRW4 14) forming a composite pixel row image signal CPRISB to the image data buffer 32 now having a cumulative buffered image data CBIDB. In FIG. 4C the 4-pixel row WCISC 10 has moved to a scan position YC along the Y-axis with respect to the IMFM 40 with the pixel row image signals (PRIS2, PRIS3, PRIS4) from imaging pixel rows (PXRW2 12, PXRW3 13, PXRW4 14) forming a composite pixel row image signal CPRISC to the image data buffer 32 now having a cumulative buffered image data CBIDC. In FIG. 4D the 4-pixel row WCISC 10 has moved to a scan position YD along the Y-axis with respect to the IMFM 40 with the pixel row image signal (PRIS1) from imaging pixel row (PXRW1 11) forming a composite pixel row image signal CPRISD to the image data buffer 32 now having a cumulative buffered image data CBIDD. FIG. 4E illustrates the completion of scanning the areal IMFM 40 of large capital letter “A” with a composition of all the composite pixel row image signals (CPRISA, CPRISB, CPRISC, CPRISD) and the now completed cumulative buffered image data CBIDD to be read by the image data readout 34.
FIG. 5A through FIG. 5C are some key figures excerpted and renumbered from FIG. 1 through FIG. 3 of U.S. Ser. No. 12/506,254 forming another key aspect of the present invention. In fact, for brevity of description of the present invention, all contents of U.S. Ser. No. 12/506,254 are incorporated herein by reference. In essence, each row (row-1, row-2, row-3 or row-4) of the 4-pixel row WCISC 10 itself is a linear image sensor with gapless pixel line and signal readout circuit segments. The linear image sensor converts a pixel line image (PLI) of length LPL into line image signal (LIS). The linear image sensor includes a linear array of sensor segments. Each sensor segment includes a gapless local pixel line segment (LPLSj) of sensing elements. The LPLSj converts portion of the PLI into a raw image segment signal set (RISSj). The LPLSj set forms a gapless global pixel line (GPL) corresponding to PLI. The sensor segment also includes readout circuit segment (RCSj) coupled to LPLSj for processing RISSj into a readout image segment signal set (ROSSj). The RCSj has a set of contact pads (CTPj) for off-chip interconnection. Upon off-chip interconnection of the CTPj set thus composing the ROSSj set into LIS, the linear image sensor functions as a key part of the 4-pixel row WCISC 10. At this point it is also important to point out that, for example, the imaging pixel row PXRW2 12 is a selected portion, following a wafer level functionality verification, of the linear image sensor row-2, etc.
FIG. 6A illustrates a 5-pixel row WCISC 120 that is another specific embodiment of the present invention multi-pixel row wafer-scale cluster image sensor chip. Here, the functionally verified imaging pixel rows are PXRW1 121, PXRW2 122, PXRW3 123, PXRW4 124 and PXRW5 125 spaced uniformly along the Y-direction. The five (5) imaging pixel rows are of equal pixel row width with no X-direction offset from one another. The PXRW1 121 has a gapless global pixel line (GPL) 121a. The PXRW2 122 has a GPL 122a. The PXRW3 123 has a GPL 123a. The PXRW4 124 has a GPL 124a. The PXRW5 125 has a GPL 125a. The following are some examples of off-chip signal interconnection:

    
    
        Off-chip signal interconnect 121b for PXRW1 121.
        Off-chip signal interconnect 124b for PXRW4 124.
        Off-chip signal interconnect 125b for PXRW5 125.

As another more specific embodiment of the present invention, the 5-pixel row WCISC 120 can include a set of row-specific color filters atop the GPL 121a, GPL 122a, GPL 123a, GPL 124a and GPL 125a so as to make the 5-pixel row WCISC 120 a key component of a color IMFM imager system.

    
    


FIG. 6B briefly illustrates another embodiment of the present invention multi-pixel row wafer-scale cluster image sensor chip in a two-dimensional layout at the wafer level. Here, a wafer 140 is mapped into numerous two-dimensionally contiguous mask imaging fields, for example 142. Each mask imaging field contains a photoelectrical sensing area (example 144) and peripheral off-chip signal interconnect pads (example 146). To maintain a good lithographic mask imaging throughput during its wafer manufacturing process, each mask imaging field is sized to be within a maximum allowable imaging field size of a step-and-imaging equipment while the collective size of multiple mask imaging fields is allowed to exceed the maximum allowable imaging field size.
A multi-pixel row wafer-scale cluster image sensor chip is proposed with each pixel row having a gapless pixel line and multiple signal readout circuit segments for high quality and color electronic imaging. Throughout the description and drawings, numerous exemplary embodiments were given with reference to specific configurations. It will be appreciated by those of ordinary skill in the art that the present invention can be embodied in numerous other specific forms and those of ordinary skill in the art would be able to practice such other embodiments without undue experimentation. The scope of the present invention, for the purpose of the present patent document, is hence not limited merely to the specific exemplary embodiments of the foregoing description, but rather is indicated by the following claims. Any and all modifications that come within the meaning and range of equivalents within the claims are intended to be considered as being embraced within the spirit and scope of the present invention.

## Claims

1. A multi-pixel row wafer-scale cluster image sensor chip (WCISC) for, expressed in an X-Y-Z Cartesian coordinate system with pixel rows of the WCISC oriented along X-axis and its principal chip surface lying in X-Y plane, photoelectrically converting an areal image frame (IMFM), of width IFW and height IFH in X-Y plane, into a corresponding areal image frame signal (AIFS), the WCISC comprises:
a plurality of imaging pixel rows PXRW1, PXRW2, . . . , PXRWi, . . . , PXRWM where M>1 with each pixel row PXRWi having numerous photoelectrical sensing elements (PESE) spanning a pixel row width PRWi and producing a corresponding pixel row image signal PRISi, each PXRWi being further offset from PXRW1 along X-direction by a distance XOFSTi; and
b) spaced from PXRWid along Y-direction by a distance SPid,i such that the X- and Y-extremities of each pixel row PXRW1, . . . , PXRWM define the IMFM; and

the widths PRWi and distances XOFSTi being chosen such that any image pixel sweeping through the IMFM along Y-direction will cross hence will be photoelectrically sensed by at least one imaging pixel row whereby:
owing to its configurationally flexibility, the WCISC can be made with correspondingly higher wafer level yield thus lower cost; and
in the presence of a Y-directional relative motion between WCISC and IMFM and an external electronic imaging controller (EEIC) interfacing with the WCISC, the EEIC can extract all the PRISi from the WCISC and reconstruct the AIFS
wherein a plurality of imaging pixel rows PXRW1, PXRW2, . . . , PXRWi, . . . , PXRWM where M>1, the imaging pixel rows are offset along X-direction by distances XOFST2=XOFST3 . . . XOFSTM=0 and each PXRWi photoelectrically converts a pixel line image (PLI) of width PRWi into the PRISi, said each PXRWi further comprises an X-direction linear array of contiguous sensor segments SS ̃, SS2, . . . , SS3, . . . , SSN (N>1) spaced at a scribe pitch (SCP) wherein each SS3 further comprises:
c) a gapless local pixel line segment (LPLSj) of photoelectrical sensing elements PESEj, PESEj2, . . . , PESEjk, . . . , PESEjp (P>=I) spaced at a sensor element pitch (SEP) for:
c1) converting a corresponding local segment of said PRISi into a raw image segment signal set (RISSj); and
c2) forming a gapless global pixel line (GPL) corresponding to the PRISi; and
d) a readout circuit segment (RCSj) coupled to the LPLSj for processing the RISSj into a readout image segment signal set (ROSSj), said RCSj further comprises a set of contact pads (CTPj) for off-chip signal interconnection; upon a pre-determined configuration of off-chip interconnection of the contact pad set (CTP, . . . , CTPN) so as to compose the a readout image segment signal set ROSS1, . . . , ROSSN into the PRISi, said each PXRWi functions as a key imaging portion of the WCISC.

2. The WCISC of claim 1 wherein said each PXRWi further comprises two dicing margins DCM1 and DCMN located respectively contiguous to SS1 and SSN.

3. The WCISC of claim 2 wherein each SSj has the same structure in that each LPLSj and each RCSj are replicated across SS1, SS2, . . . , SSN.

4. The WCISC of claim 3 wherein, to maintain a good lithographic mask imaging throughput during its wafer manufacturing process, each SSj is sized to be within a maximum allowable imaging field size of a step-and-imaging equipment while the range of X-extremities of (PXRW1, . . . , PXRWM) is allowed to exceed the maximum allowable imaging field size.

5. The WCISC of claim 1 wherein P>1, said RCSj further comprises P pixel readout circuits PRCjk (k=1,2, . . . , P) each respectively coupled to a corresponding PESEjk and at least one pair of neighboring pixel readout circuits PRCjk, PRCjk+1 are, referencing the Y-direction, placed at the opposite side of the LPLSj whereby relieve an X-direction circuit integration density of the RCSj.

6. The WCISC of claim 5 wherein each PESEjk is a photodiode and each PRCjk further comprises a transfer control switch and a feedback-loop operational amplifier both coupled to the photodiode plus an in-pixel correlated double sampling (CDS) circuit.

7. The WCISC of claim 1 wherein said SEP ranges from about 5 micron to about 100 micron.

8. The WCISC of claim 1 wherein the number of photoelectrical sensing elements P ranges from about 100 to about 1000000.

9. A multi-pixel row wafer-scale cluster image sensor chip (WCISC) for, expressed in an X-Y-Z Cartesian coordinate system with pixel rows of the WCISC oriented along X-axis and its principal chip surface lying in X-Y plane, photoelectrically converting an areal image frame (IMFM), of width IFW and height IFH in X-Y plane, into a corresponding areal image frame signal (AIFS), the WCISC comprises:
a plurality of imaging pixel rows PXRW1, PXRW2, . . . , PXRWi, . . . , PXRWM where M>1 with each pixel row PXRWi having numerous photoelectrical sensing elements (PESE) spanning a pixel row width PRWi and producing a corresponding pixel row image signal PRISi, each PXRWi being further offset from PXRW1 along X-direction by a distance XOFSTi; and
b) spaced from PXRWid along Y-direction by a distance SPid,i such that the X- and Y-extremities of each pixel row PXRW1, . . . , PXRWM define the IMFM; and
the widths PRWi and distances XOFSTi being chosen such that any image pixel sweeping through the IMFM along Y-direction will cross hence will be photoelectrically sensed by at least one imaging pixel row whereby:
owing to its configurationally flexibility, the WCISC can be made with correspondingly higher wafer level yield thus lower cost; and

wherein, to maintain a good lithographic mask imaging throughput during its wafer manufacturing process while the range of Y-extremities of a plurality of imaging pixel rows PXRW1, PXRW2, . . . , PXRWi, . . . , PXRWM where M>1 exceeds a maximum allowable imaging field size of a step-and-imaging equipment, said PXRW, . . . , PXRWM are configured and partitioned, along the Y-direction, into a number of contiguous and structurally identical row units each sized to be less than the maximum allowable imaging field size of a step-and-imaging equipment.

10. The WCISC of claim 9 wherein said EEIC is configured to extract all the PRISi from the WCISC in parallel so as to reconstruct the AIFS with a correspondingly higher imaging throughput.

11. The WCISC of claim 9 further comprises a set of row-specific color filters atop the PXRW1, PXRW2, . . . , PXRWi, . . . , PXRWM so as to make the EEIC a color IMFM imager.

12. The WCISC of claim 9 wherein the number of imaging pixel rows M is from about 3 to about 10.

13. A method of, as expressed in an X-Y-Z Cartesian coordinate system, photoelectrically converting an areal image frame (IMFM) of width IFW and height IFH in the X-Y plane, into a corresponding areal image frame signal (AIFS), the method comprises:
a) providing a multi-pixel row wafer-scale cluster image sensor chip (WCISC) with:
a1) its pixel rows oriented along X-axis and its principal chip surface lying in X-Y plane; and
a2) a plurality of imaging pixel rows PXRWi, PXRW2, . . . , PXRWi, . . . , PXRWM where M>1 with each pixel row PXRWi having numerous photoelectrical sensing elements (PESE) spanning a pixel row width PRWi and producing a corresponding pixel row image signal PRISi, each PXRWi being further:
a21) offset from PXRWi along X-direction by a distance XOFSTi; and
a22) spaced from PXRWi−1 along Y-direction by a distance SPi−1,i such that the X- and Y-extremities of a plurality of imaging pixel rows PXRWi, . . . , PXRWM define the IMFM; and
the widths PRWi and distances XOFSTi being chosen such that any image pixel sweeping through the IMFM along Y-direction will cross hence will be photoelectrically sensed by at least one imaging pixel row;
b) causing a Y-directional relative motion between WCISC and IMFM; and
c) providing an external electronic imaging controller (EEIC) interfacing with the WCISC whereby the EEIC extracts all the PRISi from the WCISC and reconstructs the AIFS;
setting a plurality of imaging pixel rows PXRW1=PXRW2− . . . =PRWM and the imaging pixel rows are offset along X-direction by distances XOFST2=XOFST3 . . . XOFSTM=0 with each PXRWi photoelectrically converting a pixel line image (PLI) of width PRWi into the PRISi;
partitioning each PXRWi along X-direction into a linear array of structurally identical contiguous sensor segments SS1, SS2, . . . , SSj, . . . , SSN (N>1) spaced at a scribe pitch (SCP) wherein each SSj further comprises:
d) a gapless local pixel line segment (LPLSj) of photoelectrical sensing elements PESEj1, PESEj2, . . . , PESEjk, . . . , PESEjp (P>=1) spaced at a sensor element pitch (SEP) for: d1) converting a corresponding local segment of said PRISi into a raw image segment signal set (RISSj); and
d2) forming a gapless global pixel line (GPL) corresponding to the PRISi; and
e) a readout circuit segment (RCSj) coupled to the LPLSj for processing the RISSj into a readout image segment signal set (ROSSj), said RCSj further comprises a set of contact pads (CTPj) for off-chip signal interconnection; and with a pre-determined off-chip configuration, interconnecting the contact pad set (CTPj, . . . , CTPN) so as to compose the a readout image segment signal set ROSS1, . . . , ROSSN into the PRISi.

14. The method of claim 13 wherein partitioning each PXRWi along X-direction further comprises, during the WCISC manufacturing process, dicing the WCISC off from a processed wafer with two dicing margins DCM1 and DCMN located respectively contiguous to the SS1 and the SSN.

15. The method of claim 14 wherein, to maintain a good lithographic mask imaging throughput during the WCISC wafer manufacturing process, sizing each SSj to be within a maximum allowable imaging field size of a step-and-imaging equipment while allowing the range of X-extremities of (PXRW1, . . . , PXRWM) to exceed the maximum allowable imaging field size.

16. A multi-pixel row wafer-scale cluster image sensor chip (WCISC) for, expressed in an X-Y-Z Cartesian coordinate system with pixel rows of the WCISC oriented along X-axis and its principal chip surface lying in X-Y plane, photoelectrically converting an areal image frame (IMFM), of width IFW and height IFH in X-Y plane, into a corresponding areal image frame signal (AIFS), the WCISC comprises:
a plurality of imaging pixel rows PXRW1, PXRW2, . . . , PXRWi, . . . , PXRWM where M>1 with each pixel row PXRWi having numerous photoelectrical sensing elements (PESE) spanning a pixel row width PRWi and producing a corresponding pixel row image signal PRISi, each PXRWi being further offset from PXRW1 along X-direction by a distance XOFSTi; and
b) spaced from PXRWid along Y-direction by a distance SPid,i such that the X- and Y-extremities of each pixel row PXRW1, . . . , PXRWM define the IMFM; and
the widths PRWi and distances XOFSTi being chosen such that any image pixel sweeping through the IMFM along Y-direction will cross hence will be photoelectrically sensed by at least one imaging pixel row whereby:
owing to its configurationally flexibility, the WCISC can be made with correspondingly higher wafer level yield thus lower cost; and
wherein, to maintain a good lithographic mask imaging throughput during its wafer manufacturing process while the range of Y-extremities of a plurality of imaging pixel rows PXRW1, PXRW2, . . . , PXRWi, . . . ,PXRWM where M>1 exceeds a maximum allowable imaging field size of a step-and-imaging equipment, said PXRW, . . . , PXRWM are configured and partitioned, along the Y-direction, into a number of contiguous and structurally identical row units each sized to be less than the maximum allowable imaging field size.

17. A method of, as expressed in an X-Y-Z Cartesian coordinate system, photoelectrically converting an areal image frame (IMFM) of width IFW and height IFH in the X-Y plane, into a corresponding areal image frame signal (AIFS), the method comprises:
a) providing a multi-pixel row wafer-scale cluster image sensor chip (WCISC) with:
a1) its pixel rows oriented along X-axis and its principal chip surface lying in X-Y plane; and
a2) a plurality of imaging pixel rows PXRW1, PXRW2, . . . , PXRWi, . . . , PXRWM where M>1 with each pixel row PXRWi having numerous photoelectrical sensing elements (PESE) spanning a pixel row width PRWi and producing a corresponding pixel row image signal PRISi, each PXRWi being further:
a21) offset from PXRWi along X-direction by a distance XOFSTi; and
a22) spaced from PXRWi−1 along Y-direction by a distance SPi−1,i such that the X- and Y-extremities of a plurality of imaging pixel rows PXRW1=PXRW2− . . . =PRWM define the IMFM; and
the widths PRWi and distances XOFSTi being chosen such that any image pixel sweeping through the IMFM along Y-direction will cross hence will be photoelectrically sensed by at least one imaging pixel row;
b) causing a Y-directional relative motion between WCISC and IMFM; and
c) providing an external electronic imaging controller (EEIC) interfacing with the WCISC whereby the EEIC extracts all the PRISi from the WCISC and reconstructs the AIFS;
wherein, to maintain a good lithographic mask imaging throughput during the WCISC wafer manufacturing process, configuring said PXRW1, . . . , PXRWM such that the range of Y-extremities of a plurality of imaging pixel rows PXRW1=PXRW2− . . . =PRWM is less than a maximum allowable imaging field size of a step-and-imaging equipment.

18. A method of, as expressed in an X-Y-Z Cartesian coordinate system, photoelectrically converting an areal image frame (IMFM) of width IFW and height IFH in the X-Y plane, into a corresponding areal image frame signal (AIFS), the method comprises:
a) providing a multi-pixel row wafer-scale cluster image sensor chip (WCISC) with:
a1) its pixel rows oriented along X-axis and its principal chip surface lying in X-Y plane; and
a2) a plurality of imaging pixel rows PXRW1, PXRW2, . . . , PXRWi, . . . , PXRWM where M>1 with each pixel row PXRWi having numerous photoelectrical sensing elements (PESE) spanning a pixel row width PRWi and producing a corresponding pixel row image signal PRISi, each PXRWi being further:
a21) offset from PXRWi along X-direction by a distance XOFSTi; and
a22) spaced from PXRWi−1 along Y-direction by a distance SPi−1,i such that the X- and Y-extremities of a plurality of imaging pixel rows PXRW1=PXRW2− . . . =PRWM define the IMFM; and
the widths PRWi and distances XOFSTi being chosen such that any image pixel sweeping through the IMFM along Y-direction will cross hence will be photoelectrically sensed by at least one imaging pixel row;
b) causing a Y-directional relative motion between WCISC and IMFM; and
c) providing an external electronic imaging controller (EEIC) interfacing with the WCISC whereby the EEIC extracts all the PRISi from the WCISC and reconstructs the AIFS;
wherein, to maintain a good lithographic mask imaging throughput during the WCISC wafer manufacturing process while the range of Y-extremities of a plurality of imaging pixel rows PXRW1=PXRW2− . . . =PRWM exceeds a maximum allowable imaging field size of a step-and-imaging equipment, configuring and partitioning said PXRW1, . . . , PXRWM, along the Y-direction, into a number of contiguous and structurally identical row units each sized to be less than the maximum allowable imaging field size.