TRW Space &

Technology Group

One Space Park

Redondo Beach, CA 90278

JPL NO. 9950- /°

Power Electronics Hardware Laboratory

Power Sources Engineering Department

Automated Assembly of Gallium

Arsenide and Fifty-Micron Thick

Silicon Solar Cell Modules

Final Test Report

December 1984

JPL Contract 956042,

"Development of Technologies for Welding Interconnects to

Fifty-Micron Thick Silicon Solar Cells."

Document No. 38512-6002-UT-OO

Prepared by

H. G.Mesch

Prepared for This work was performed for

Jet Propulsion Laboratory Jet Propulsion Laboratory,

4800 Oak Grove Drive California Institute of Technology,

Pasadena, CA 91103 under NASA Contract NAS 7-918
TRW Space &

Technology Group

One Space Park

Redondo Beach, CA 90278

Power Electronics Hardware Laboratory

Power Sources Engineering Department

Automated Assembly of Gallium

Arsenide and Fifty-Micron Thick

Silicon Solar Cell Modules

Final Test Report

December 1984

JPL Contract 956042,

"Development of Technologies for Welding Interconnects to

Fifty-Micron Thick Silicon Solar Cells."

Document No. 38512-6002-UT-OO

Prepared by

H.G.Mesch

Prepared for This work was performed for

Jet Propulsion Laboratory Jet Propulsion Laboratory,

4800 Oak Grove Drive California Institute of Technology,

Pasadena, CA 91103 under NASA Contract NAS 7-918
AUTOMATED ASSEMBLY OF GALLIUM ARSENIDE AND

FIFTY-MICRON THICK SILICON SOLAR CELL MODULES

SECTION PAGE

1.0 ABSTRACT 1

2.0 INTRODUCTION 2

3.0 TECHNICAL DISCUSSION 3

3.1 Component Description 3

3.2 Front Contact Welding 4

3.3 Cell Glassing 5

3.4 Rear Contact Welding 6

3.5 Module Assembly 6

3.6 Module Performance 6

4.0 CONCLUSIONS 8
1.0 ABSTRACT

The TRW automated solar array assembly equipment was used for the

module assembly of 300 GaAs solar cells and 300 50-ym thick silicon solar

cells (2 x 4 cm in size). These cells were interconnected with silver

plated Invar tabs by means of welding.

The GaAs cells were bonded to Kapton graphite-aluminum honeycomb-graphite substrates and the thin silicon cells were bonded to 0.002 inch thick

single layer Kapton substrates.

The GaAs solar cell module assembly resulted in a yield of 86% and

the thin cell assembly produced a yield of 46% due to intermittent sticking

of weld electrodes during the front cell contact welding operation. (Previously assembled thin cell solar modules produced an overall assembly yield

of >80%).
2.0 INTRODUCTION

This report covers work performed under JPL contract 956042 with the

objective of using TRW's automated assembly equipment for the assembly of

solar cell stacks and manual assembly of solar cell modules for (a) 300 GaAs

solar cells and (b) 300 50-ym thick silicon solar cells, supplied by JPL.

This report describes the successful assembly of four 52-cell GaAs solar

cell modules and four 27-cell 50-ym thick silicon solar cell modules, using

a fully automatic welded interconnector attachment station and a fully automated glassing station. This program demonstrated the feasibility of automated welding and glassing of GaAs and 50-ym thick silicon cell assemblies

using proven techniques that lend themselves to high volume low cost automated

production. After hand loading the solar cells and the cover glass into

magazines, the cells were not touched until the interconnected and glassed

cell stack left the glassing station.
3.0 TECHNICAL DISCUSSION

3.1 Component Description

JPL furnished a total of 300 GaAs solar cells (350-ym thick and

2 x 4 cm in size), and 300 silicon solar cells (50-ym thick and 2 x 4 cm

in size). The GaAs cells consisted of GaAs blanks without a junction, but

had all standard metallization layers with silver being the last contact

metal to which the weld joints were made. The silicon cells were electrically active having an average performance of about 135 mW/cell, at one Sun

AMD and 28°C. The silicon cells were supplied with silver evaporated contacts. The GaAs cells had very smooth cell contacts in comparison to the

silicon cells. Due to the etching process that is required to bring the

silicon cell thickness down to 50-ym the contact waviness is approaching

conditions where actual weld joints are made predominately on the high spots

of the cell contacts. Table 1 shows the front- and rear-cell contact waviness

data for four cells. Cell bowing of the 50-ym thick silicon cells was eliminated by the cell vendor by omitting the standard rear cell full contact

evaporation and replacing it with a grid pattern and back contact pads. This

concept worked out very well and made the cells compatible with automated

O

assembly magazines. The vendor evaporated a thin aluminum layer, 700 A thick,

to produce a back surface reflector. Another 100 of the silicon cells, showing

o

a blue back surface, were coated with a 3000 to 5000 A thick SiO dielectric

insulation, and finally the last 100 silicon cells were without coating giving

a typical gray appearance of bare silicon. Welding to the rear cell contacts

was not affected by these coatings; the weld schedule turned out to be the

same for all thin cells.
CELL TYPE

GaAs

Silicon

SUBSTRATES

Graphite-Aluminum Honeycomb-graphite with

Kapton insulation sheet

2 mil thick Kapton sheet

3.2 Front Contact Welding

All front cell contact welding was performed on the Automatic Interconnector Attachment station. This machine consists of 12 rotating fixtures

surrounded by eight work stations. The station is magazine fed and the completed cell assembly is returned into a second empty magazine. The interconnectors are spool fed and automatically cut and placed onto each cell

assembly prior to the weld operation (four weld joints/cell). An improved

parallel gap weld head positioning system was designed, fabricated and installed over one of the machine positions. A constant voltage power unit

(MCW-550) made by Hughes Aircraft Company supplied the weld pulse to the weld

head. The Moly electrode dimensions for front and rear cell contact welding

were 0.025 by 0.045 inch, (0.64 by 1.14 mm).

3.2.1 GaAs Cells

In the process of developing a weld schedule for GaAs cells, excessive

cell microcracking was experienced, presumably because the welds were made

too close to the cell edge. Weld schedule changes did not solve that problem.

The weld fixtures (12) were reworked in order to relocate the interconnector

and a smoother fixture surface was provided which resulted in the elimination

of micro-cracks in the GaAs. Pull strength (zero degree) values ranged from

0.1 to 1.3 kg (average = 0.73 kg). The front contact weld schedule is shown

in Table II.

3.2.2 50-ym Thick Silicon Cells

The weld schedule for the silicon cells was determined on the Automatic

Interconnector Attachment Station. Pull strength (zero degree) values ranged

from 0.2 to 2.5 kg (average = 1.15 kg). Table II shows the weld schedule.
Initial welding went without problems, however, toward the end of the

run the weld electrodes started to become sticky which caused cell breakage

during the electrode upstroke (cells held to the fixture using vacuum),

reducing the assembly yield at this station to 62%. Cells of conventional

thickness may experience the same sticking; however, excessive breakage has

not been noticed. Sticking can be eliminated in the future by weld equipment

modification.

3.3 Cell Glassing

The solar cell glassing operation was performed on the Automatic Glassing

Station, which consists of:

1. Automatic loading of glassing fixtures.

2. Placement of cells onto the glassing fixtures from the cell

magazine.

3. Dispensing of adhesive (DC93-500) onto solar cell.

4. Dispensing of cover glass from the cover magazine and placement

onto the solar cell.

5. Shifting of loaded glassing fixtures from the vertical conveyor belt

onto the horizontal belt where the adhesive precure cycle is performed.

In order to process the thin silicon cells the following modifications

were necessary: (a) modification of glassing fixtures, (b) minor modification

at cell ejector, and (c) minor changes at the final positioning mechanism for

cell and cover glass.

A major problem was encountered during the dispensing of the thin glass

out of the cover glass magazine, because the cover glass was bowed downwards.

During the dispensing cycle two covers were pushed out. This problem was overcome by turning the covers over (with JPL's permission) and loading them into

a magazine that had a larger spacing between covers. Additional cover development work is required to eliminate bowing on thin covers. The GaAs cells

and covers went through the glassing station like conventional silicon cells.

The glassing yields, which include adhesive removal and inspection after

glassing, were 93% for the GaAs cells and 81% for the 50-ym thick silicon

cells, as shown in Table III.
Excess adhesive was removed from the glassed cells using a non-automated

process.

3.4 Rear Contact Welding

The 50-um thick silicon cells were characterized under the X-25 solar

simulator after glassing in order to match the cells for optimum module performance. The GaAs cells were picked at random for the module assembly since

they had no electrical output.

Welding of the rear contacts was accomplished on the Lab-Welder which

has a small area x-y coordinate system; in principal this is the same system

as the large x-y tables with tape control that are used on the production

floor. The weld schedules were determined by using glassed cell assemblies.

No abnormalities were encountered during this operation. The weld schedules

for the rear cell contacts are presented in Table II.

The assembly yield for rear contact welding were 99% for the GaAs cells

and 99% for the thin cells.

3.5 Module Assembly

The actual module string bonding to the various substrate materials

went without difficulty. Single 50-ym thick silicon cell 'replacement took

a little longer than replacing conventional cell assemblies, but other than

that no problems were encountered.

The completed modules are shown in Figures 1 and 2 for the GaAs cells

on graphite-honeycomb-graphite substrates having 1-mil Kapton sheets as an

insulator and the thin cells on 2-mil Kapton, respectively. Figure 3 shows

a rear view of the thin cell modules as seen through the Kapton sheet. Figures

4 and 5 show a front view close-up of the GaAs and the silicon solar cells,

respectively. Figure 6 shows a close-up view of the gridded contact thin

cell assemblies as seen through the transparent Kapton substrate material.

The overall assembly yields have been summarized in Table III.

3.6 Module Performance

The electrical performance of the 50-ym thick silicon cell modules was 2

measured with the Large Area Solar Simulator (LAPSS) at 135.3 mW/cm at 28°C.
The typical I-V characteristics of these four modules are shown in Figures

7 through 10. All modules, with the exception of module serial number 004,

were electrically matched for parallel interconnected cells. Single cell

o

measurements could not be performed on the cells with the 3000 to 5000 A

SiO dielectric backside coating. Therefore module serial number 004 which

contains these cells does not have a predicted output point.
4.0 CONCULSION

Although this was a limited test program, the results have been very

encouraging and clearly demonstrate that the existing assembly equipment can

handle both, the welded GaAs solar cell and the welded or soldered 50 micron

thick silicon cell with only minor modification required to the existing

assembly equipment.

The primary advantage of this approach is that the fragile solar cell

and cover glass assemblies are handled by the machines exclusively until they

are joined together and then are a much less fragile cell stack assembly that

will be more forgiving in the assembly steps that follow.

The weld schedules developed have produced pull strength values comparable to those for previous welded thermal cycle test specimens which have

withstood thousands of thermal cycles.

Weld electrode sticking can be overcome either by vibratory means prior

to the upstroke, or other mechanical methods.

8
Table I. Surface Roughness

FRONT CELL CONTACT

H

CELL ^

NO. £

1 A

B

2 A

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3 A

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4 A

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(y INCH)

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95

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50

140

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155

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235
Table II. Weld Schedule

FRONT CELL CONTACT

WELD

PARAMETER

PRESSURE

TIME

VOLTAGE

ELECTRODE SIZE

TEST VOLTAGE

VOP

Ga As CELL

1.5 LB

50 ms

.64 V

.025 x .045 INCH

-

THIN CELL

2.2 LB

100 ms

.60 V

.025 x .045 INCH

0.460 V

REAR CELL CONTACT

WELD

PARAMETER Ga As CELL THIN CELL

PRESSURE

TIME

VOLTAGE

ELECTRODE SIZE

1.0 LB

50 ms

0.58 V

.025 x .045 INCH

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100 ms

0.55 V

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15
Figure 5. Front View Close-Up of Silicon Thin Cell Module

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Figure 6. Rear View Close-Up of Silicon Thin Cell Module

(Showing Gridded Back Surface)

17
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21