GSFC PREFERRED PARTS LIST

PPL-17

SEPTEMBER 1984

INASA-TM-8876S) GSFC PBEFEBEED PABTS.LISTS N86-28264

PPL-17 (NASA ) .94 p HC. A05/HF A01 CSCL. 13B

v :..._:

Duclas

G3/31 43396

GODDARD SPACE FLIGHT CENTER

This document was prepared by the Parts Branch of the Goddard Space Flight Center and the

Preferred Parts Mission of the Sperry Corp.

Edited & Approved by: _i=si

Bruno P. Baldini

Parts Branch

Approved ^v-^r* , x r ^

/

Perny R. Mason, Jr., Head

Parts Branch

Information Contained Herein Shall Not Be Used For Advertising or Publicity Purposes
PREFACE

PURPOSE

This document contains a listing of preferred parts, part upgrading procedures, part derating

guidelines, and part screening procedures to be used in the selection, procurement, and application

of parts for GSFC space systems and ground support equipment.

AUTHORITY

The GSFC PPL is authorized and invoked by Goddard Management Instructions (GMI)

5330.6, Implementation of the Goddard Space Flight Center Parts Program.

STANDARDIZATION

MIL-STD-975, the NASA Standard (EEE) Parts List (NSPL), is the prime reference

document for preferred electronic parts for NASA. The GSFC Preferred Parts List (PPL-17),

complements MIL-STD-975 by listing additional part types and part categories not included in

MIL-STD-975. Parts or styles listed in MIL-STD-975 are identified in PPL-17 as a convenience to

users. Several part types listed in MIL-STD-975 are not identified in PPL-17. They are considered

to be nonstandard, and are so noted in the PPL. Where conflicts exist between the NSPL and

PPL-17, PPL-17 takes precedence.

All parts not specifically identified in the current issues of MIL-STD-975 or the GSFC PPL

or which are not procured to the specification given in MIL-STD 975 or PPL are non-standard.

These parts shall be used only, with the approval of the GSFC Project Office, if needs cannot be

satisfied with a standard part.

QUALITY LEVELS

Consistent with MIL-STD-975, PPL-17 specifies two levels of quality. Grade 1 parts are higher

quality, government-specification-controlled parts intended for critical applications. Grade 2 parts

are high quality government-specification-controlled parts for use in applications where grade 1

parts are not required.

The parts listed in this document meet the requirements of a Military or NASA specification.

When a PPL listed part is purchased, the specification listed for the part and the recommended

manufacturer(s) or the manufacturers on the QPL for the part must be referenced in the

procurement request.

All specifications listed in the PPL are maintained on file in the Parts Branch for reference

purposes. GSFC personnel can obtain copies of specifications through their division offices from

the Parts Branch Library, code 310.1, telephone (301) 344-7240. Contractors, approved domestic

and foreign experimenters, and international cooperative project working groups can obtain copies

111

PRECEDING P&GE BLANK WV FILLED
of the PPL and copies of referenced documents, except MIL specifications, by a written request

via the cognizant project office. All others may obtain copies of the PPL through the National

Technical Information Service (NTIS), Springfield, VA 22161 or the GIDEP data bank. Requests

for Military Specifications should be directed to:

Commanding Officer

Naval Publications and Forms Center, Code 3015

5801 Tabor Avenue

Philadelphia, PA 19120

REVISIONS

The PPL will be reissued during 1986. Portions may be changed and updated prior to that

date, as required. Parts not now listed, for which a substantial or critical usage is anticipated,

should be brought to the attention of the Parts Branch so that those parts may be considered as

candidates for evaluation and possible future listing in MIL-STD-975 or the GSFC PPL. Call

(301) 344-8923 or (301) 344-6485.

PART CHARACTERISTICS

Electrical characteristics are specified at 25°C ambient, unless otherwise noted.

CRITERIA FOR LISTING PARTS

Parts are listed in the PPL based on the following criteria:

(1) they can be procured to a high reliability military or NASA specification;

(2) they have complied with an approved series of qualifying criteria;

(3) they are judged by the GSFC Parts Branch to be available and not redundant to other

parts in the GSFC PPL or MIL-STD-975.

USER RESPONSIBILITY

MIL-STD-975 and the PPL serve the Center covering both Flight and Ground Support

Equipment applications and needs. It is the responsibility of the user, the product assurance

engineer, and flight assurance manager to insure that the proper grade level parts are selected

from MIL-STD-975 and the PPL commensurate with the criticality of the application.

IV
PARTS APPLICATIONS

MIL-HDBK-978, NASA Parts Application Handbook, is intended to maintain a parts

technology baseline for NASA centers and NASA contractors and to maximize standard parts

usage. It is an integral part of the NASA standard parts program.

Those part categories covered in MIL-HDBK-978 that are also found in PPL-17 are:

Microcircuits (Microelectronic Devices), Transistors, Diodes, Capacitors, Resistors, Connectors,

Filters, Protective Devices, Relays, Transformers and Inductors. Some other features found in the

handbook are: Cost Factors, Definitions, Construction Details, Operating Characteristics, Failure

Mechanisms, Screening Techniques, Environmental Considerations, Selection Criteria, Circuit

Application, Failure Rates and Radiation Effects.

PARTS UPGRADING

For some types of parts listed in MIL-STD-975 and the PPL, Grade 1 parts are not listed.

Appendix A gives guidelines for upgrading a Grade 2 part for use in a Grade 1 application. In all

cases, upgrading must be approved by submission of a non-standard part approval rquest. This

additional testing does not provide a part that is equivalent to the Grade 1 part. Subsequent

testing never can duplicate design and processing controls that are imposed during manufacturing.

PARTS DERATING

Conservative application stresses are an important design tool for decreasing part degradation, improving failure rates, and prolonging the useful life of parts. For guidance, recommended

part derating factors are tabulated in Appendix B.

PARTS SCREENING

Screening is designed to eliminate quality defects that will prevent a part from meeting its

intended performance requirements. Screening is not a substitute for the design and processing

controls that can be applied to a part during manufacturing to improve its reliability. Appendix C

gives screening guidelines that should be used when a nonstandard part must be procured because

no standard part is available.

PARTS RADIATION EFFECTS

Space radiation can present a hazard to electronic parts on space missions. Appendix D gives

information on radiation effects on electronic parts.

REFERENCED SPECIFICATIONS

Unless noted otherwise, all specifications referenced in the PPL are the issue in effect on the

date of PPL issue.
PARTS INFORMATION DIRECTORY

Assistance in the selection of parts, parts specifications, manufacturers surveys, incoming

inspection, screening evaluation tests and failure analysis services for all parts are available from the

Parts Branch of the Product Assurance Division.

For assistance on electronic parts problems and questions in direct support of specific projects,

users should contact the cognizant parts specialist assigned to the respective project. If unknown,

the identity can be determined by contacting the project office.

For general evaluation information of electronic parts, part specifications, and part qualifications, users may contact a specialist in the particular part category, as listed below:

PART CATEGORY SPECIALIST . TELEPHONE

(301) 344-

Capacitors P. Jones 5910

Connectors J. Lawrence 5640

Crystals V. Patel 6382

Diodes M. Robertson 5910

Electro Optics L. Milliard 5987

Filters V. Patel 6382

Fuses J. Henegar 5345

Inductors F. Kreis 7339

Microcircuits S. Bryant 7437

PC Boards j H. Chernikoff 5984

|F. Kreis 7339

Relays J. Lawrence 5640

Resistors F. Kreis 7339

Thermistors J. Henegar 5345

Transformers F. Kreis 7339

Transistors M. Robertson 5910

Wire and Cable J. Lawrence 5640

All Preferred Parts J6588

J6220

Additional services in support of the GSFC parts program are:

FUNCTION CONTACT TELEPHONE

(301) 344-

Electronic Parts Qualification 1 _ _ ... . „_,„

T ,. ., . , - ,. nnT B. Baldim 8923

Testing, Maintenance of the PPL)

Electronic Parts Incoming Test,) w Owens 6134

Inspection, and Screening I

Data Systems G. Ritter 7635

Failure Analysis

n . .. TO. , A , • i B. Baldini 8923 Destructive Physical Analysis)

VI
FUNCTION CONTACT TELEPHONE

(301)344-

„ . . D c • r * IH- Chernikoff 5984

Packaging Process Specialist <p .

D ,. .. crp . (J. Adolphsen 8896

Radiation Effects J „. _.

 F

. , _ .,_

D. Cleveland 7437

vn
CONTENTS

Page

PREFACE iii

PARTS INFORMATION DIRECTORY vii

SECTION

01 CAPACITORS

Index of Preferred Capacitors 01-1

Glass, Fixed 01-2

02 CONNECTORS

Index of Preferred Connectors 02-1

Rack and Panel, Subminiature, Solder Contacts 02-2

Rack and Panel, Subminiature Crimp Removable Contacts 02-3

Rack and Panel, Subminiature High Density,

Crimp Removable Contacts 02-4

03 FILTERS

Index of Preferred Filters 03-1

04 FUSE

Index of Preferred Fuses 04-1

Subminiature (Axial Leads) , 04-2

05 INDUCTORS

Index of Preferred Inductors 05-1

06 RELAYS

Index of Preferred Relays 06-1

Non-Latching 06-2

Latching 06-3

07 RESISTORS

Index of Preferred Resistors 07-1

08 DIODES

Index of Preferred Diodes . 08-1

Switching, Silicon 08-3

Voltage Reference, Silicon 08-4

Voltage Regulator, Silicon 08-5

Power Rectifiers, Fast Switching Silicon 08-7

Power, Silicon 08-8

Voltage Variable Capacitor, Silicon 08-8

Switching, Silicon, Arrays 08-9

09 TRANSISTORS

Index of Preferred Transistors 09-1

Low Power, Silicon, NPN 09-2

viii
SECTION

CONTENTS (cont.)

Page

09 (cont.)

Low Power, Silicon, PNP 09-2

Medium Power, Silicon, PNP 09-2

Medium Power, Silicon, NPN 09-3

Chopper, Low Power, Silicon, PNP 09-3

High Power, Silicon, NPN 09-4

High Power, Silicon, PNP 09-4

Field Effect, N—Channel, Junction, Silicon 09-5

10 MICROCIRCUITS

Index to Preferred Microcircuits 10-1

Microcircuit Information 10-3

Digital, MIL-M-38510 Advanced Low Power Schott Ky TTL 10-4

Digital, MIL-M--38510 CMOS 10-5

14 THERMISTORS

Index of Preferred Thermistors 14-1

Negative Temperature Coefficient 14-2

15 TRANSFORMERS

Index of Preferred Transformers 15-1

16 WIRE AND CABLE

Index of Preferred Wire and Cable 16-1

Electrical, Insulated, High Temperature 16-2

Electrical, Insulated, Lightweight 16-3

Electrical, Insulated -. 16-6

Color Code Designators for Wire According to MIL-STD-681 16-7

APPENDIX A - Upgrading Grade 2 Devices for Use in

Grade 1 Applications A-l

— Upgrading Guidelines A-2

APPENDIX B — Parts Derating Factors B-l

APPENDIX C — Screening of Non-Standard Parts C-l

APPENDIX D — Radiation Effects D-l

APPENDIX E — Screening Verification E-l

IX
Index of Preferred Capacitors

Style

CCR

CDR

CKR2

CLR3. i

CRH

CSR5.6

CWR

CYR

Description

Ceramic, Temperature-compensating, Fixed

Ceramic, Chip, Multiple-layered, Fixed

Styles CDR01, 03, 04, 05, 06

Ceramic, Fixed

Tantalum (non-solid) electrolytic. Fixed

Plastic (metalized), Fixed

Tantalum (solid) electrolytic, Fixed

Tantalum Chip, Fixed

Glass, Fixed

Styles CYR 10, 15, 20, 30

Styles CYR13, 41, 42, 43, 51, 52, 53

Specification

MIL-C-20

MIL-C-55681

MIL-C-39014

MIL-C-39006

MIL-C-83421

MIL-C-39003

MIL-C-55365

MIL-C-23269

Refer To

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

Pages 01-2 to 01-7

NOTES:

1. CKR styles are to be limited to maximum capacitance values as follows:

CKR05- 33,000 pf CKR11- 4,700 pf CKR14- 47,000 pf

CKR06-333,000 pf CKR12- 10,000 pf CKR15- 180,000 pf

CKR styles shall be purchased to revision C of MIL-C-39014.

2. CLR styles with ratings above 100 volts are not to be used for Grade I applications.

3. A non-standard parts approval is needed if the requirements of notes 1 and 2 are to be waived.

4. The CLR79 style wet slug tantalum capacitors shall be subjected to an acid indicator leak test in accordance with

paragraphs III and IV of GSFC screening procedure SP01.23.

5. EFFECTIVE SERIES RESISTANCE SEEN BY CSR STYLE CAPACITORS SHOULD BE EQUAL TO OR GREATER

THAN ONE OHM/VOLT. AS NOTED IN MIL-STD-975, THE CSR STYLE OF CAPACITOR IS NOT

RECOMMENDED FOR USE IN APPLICATIONS OF LESS THAN ONE OHM/VOLT, AS IN POWER SUPPLY FILTERS.

6. Surge current testing shall be performed on CSR style capacitors for all Grade 1 applications per MIL-STD-975.

01-1 PPL 17

September, 1984
MIL-C-23269, CAPACITORS

Fixed, Glass Dielectric, Established Reliability

Part Number example:

Parr

Number

M23269/05

M23269/09

Style

CYR13

CYR41

CYR42

CYR43

M23269 /XX XXXX

M-Number - identifies "CYR" fixed, glass /XX - identifies the appropriate military specification XXXX - uniquely specifies the nominal capacitance

dielectric, established reliability capacitors sheet that uniquely specifies the capacitor family. value, capacitance tolerance, rated dc voltage, and

conforming to MIL-C-23269. failure rate level (%/1000 hours).

See

Page

01-

3,4

5

6

7

Capacitance

Range

(pF)

0.5-300

0.5-1000

0.5-300

330-1200

Maximum

Dissipation

Factor

(%)

07030 1

0.1

Rated

Voltage

(volts, dc)

300, 500

100

50-500

50-300

Temperature

Range

°C

-55° C

to

+125°C

Coefficient

(ppm/°C)

105 ±25

0±25

Minimum

Insulation

Resistance

(megohms)

500 K

@25°C

Configuration

Case

Type

Rectangular,

hermetic

Lead

Type

Axial or

Radial

Radial

Axial

Axial

Grade 1

FRL

R

(Note 1)

Grade 2

FRL

P

P

Manufacturer

QPL-23269

NOTES:

1. No Grade 1 parts are available at the present time.

01-2 PPL 17

September, 1984
M23269/05, STYLE CYR13

Fixed, Glass Dielectric, Established Reliability

Capacitance

Value

(pF)

0.5

1 .0

1.5

2.2

2.7

3.0

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

10

11

Tolerance

(±)

0.25pF

0.25pF

0.25pF

0.25pF

O.SOpF

0.25pF

0.25pF

O.SOpF

0.25pF

0.25pF

O.SOpF

0.25pF

0.25pF

O.SOpF

0.25pF

0.25pF

0.25pF

5%

0.25pF

5%

0.25pF

5%

0.25PF

5%

0.25pF

5%

0.25pF

5%

0.25pF

5%

0.25pF

5%

Dissipation

Factor

(%)

0.7

0.3

Rated

Voltage

(volts, dc)

500

Part Number M23269/05-

Grade 1

FRL=R(0.01)

5001

5002

5003

5004

5005

5006

5007

5008

5009

5010

5011

5012

5013

5014

5015

5016

5017

5018

5019

5020

5021

5022

5023

5024

5025

5026

5027

5028

5029

5030

5031

5032

Grade 2

FRL = P(0.1)

4001

4002

4003

4004

4005

4006

4007

4008

4009

4010

4011

4012

4013

4014

4015

4016

4017

4018

4019

4020

4021

4022

4023

4024

4025

4026

4027

4028

4029

4030

4031

4032

Capacitance

Value

(pF)

12

13

15

16

18

20

22

24

27

30

33

36

39

43

Tolerance

(±)

0.25pF

5%

2%

5%

2%

5%

2%

5%

2%

5%

2%

5%

2%

5%

2%

5%

1%

2%

5%

1%

2%

5%

1%

2%

5%

1%

2%

5%

1%

2%

5%

1%

Dissipation

Factor

(%)

0.3

0.1

Rated

Voltage

(volts, dc)

500

Part Number M23269/05-

Grade 1

FRL = R(0.01)

5033

5034

5035

5036

5037

5038

5039

5040

5041

5042

5043

5044

5045

5046

5047

5048

5049

5050

5051

5052

5053

5054

5055

5056

5057

5058

5059

5060

5061

5062

5063

5064

Grade 2

FRL = P(0.1)

4033

4034

4035

4036

4037

4038

4039

4040

4041

4042

4043

4044

4045

4046

4047

4048

4049

4050

4051

4052

4053

4054

4055

4056

4057

4058

4059

4060

4061

4062

4063

4064

01-3 PPL 17

September, 1984
M23269/05, STYLE CYR13 (continued)

Fixed, Glass Dielectric, Established Reliability

Capacitance

Value

(PF)

43

47

51

56

62

68

75

82

91

100

110

Tolerance

(± %)

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

Dissipation

Factor

(%)

0.1

Rated

Voltage

(volts, dc)

500

Part Number M23269/05-

Grade 1

FRL= R(0.01)

5065

5066

5067

5068

5069

5070

5071

5072

5073

5074

5075

5076

5077

5078

5079

5080

5081

5082

5083

5084

5085

5086

5087

5088

5089

5090

5091

5092

5093

5094

5095

1 Grade 2

FRL = P(0.l)

4065

4066

4067

4068

4069

4070

4071

4072

4073

4074

4075

4076

4077

4078

4079

4080

4081

4082

4083

4084

4085

4086

4087

4088

4089

4090

4091

4092

4093

4094

4095

Capacitance

Value

(pF)

110

120

130

150

160

180

200

220

240

270

300

Tolerance

(± %)

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

Dissipation

Factor

(%)

0.1

Rated

Voltage

(volts, dc)

500

300

Part Number M23269/05-

Grade 1

FRL = R(0.01)

5096

5097

5098

5099

5100

5101

5102

5103

5104

5105

5106

5107

5108

5109

5110

5111

5112

5113

5114

5115

5116

5117

5118

5119

5120

5121

5122

5123

5124

5125

5126

Grade 2

FRL=P(0.l)

4096

4097

4098

4099

4100

4101

4102

4103

4104

4105

4106

4107

4108

4109

4110

4111

4112

4113

4114

4115

4116

4117

4118

4119

4120

4121

4122

4123

4124

4125

4126

01-4 PPL 17

September, 1984
M23269/09, STYLE CYR41

Fixed, Glass Dielectric, Established Reliability

Capacitance

Value

(pF)

0.5

1.5

2.7

3.3

3.9

4.7

5.6

6.8

8.2

10

12

15

18

22

27

33

39

47

56

68

Tolerance

(±)

r

 0.25pF

0.25pF

0.25pF

0.25Pf

0.25pF

0.25pF

0.25pF

0.25Pf

5%

0.25pF

5%

0.25pF

5%

0.25pF

5%

0.25pF

2%

5%

0.25pF

2%

5%

0.25pF

2%

I 5%

1%

2%

5%

1%

2%

5%

1%

2%

5%

1%

2%

5%

1%

2%

5%

1%

2%

5%

Dissipation

Factor

(%)

0.5

0.3

0.1

Rated

Voltage

(volts, dc)

100

Part Number M23269/09-

Grade 2

FRL=P(0.1)

4001

4002

4003

4004

4005

4006

4007

4008

4009

4010

4011

4012

4013

4014

4015

4016

4017

4018

4019

4020

4021

4022

4023

4024

4025

4026

4027

4028

4029

4030

4031

4032

4033

4034

4035

4036

4037

4038

4039

4040

4041

4042

Capacitance

Value

(pF)

82

100

120

150

180

220

270

330

390

470

560

680

820

1000

Tolerance

(± %)

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

Dissipation

Factor

(%)

0.1

Rated

Voltage

(volts, dc)

100

Part Number M23269/09-

Grade 2

FRL=P(0.1)

4043

4044

4045

4046

4047

4048

4049

4050

4051

4052

4053

4054

4055

4056

4057

4058

4059

4060

4061

4062

4063

4064

4065

4066

4067

4068

4069

4070

4071

4072

4073

4074

4075

4076

4077

4078

4079

4080

4081

4082

4083

4084

01-5 PPL 17

September, 1984
M23269/09, STYLE CYR42

Fixed, Glass Dielectric, Established Reliability

Capacitance

Value

(PF)

0.5

I .5

2.7

3.3

3.9

4.7

5.6

6.8

8.2

10

12

15

18

22

27

33

39

Tolerance

(±)

u_ u_ u_ u_ u_ LL.

Q_ Q_ Q_ Q_ Q_ a

IT) IT) UO IO U"> IOCM CM CM CM CM CMO O 0 0 O 0

0.25pF

0.25pF

5%

0.25pF

5%

0.25pF

5%

0.25pF

5%

0.25pF

2%

5%

0.25pF

2%

5%

0.25pF

2%

5%

1%

2%

5%

1%

2%

5%

1%

2%

5%

Dissipation

Factor

(%)

0.7

0.3

/

0.1

Rated

Voltage

(volts, dc)

500

Part Number M23269/09-

Grade 2

FRL=P(0.1)

4101

4102

4103

4104

4105

4106

4107

4108

4109

4110

4111

4112

4113

4114

4115

4116

4117

4118

4119

4120

4121

4122

4123

4124

4125

4126

4127

4128

4129

4130

4131

4132

4133

Capacitance

Value

(PF)

47

56

68

82

100

120

150

180

220

270

300

Tolerance

(± %)

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

1

2

5

Dissipation

Factor

(%)

0.1

Rated

Voltage

(volts, dc)

500

300

100

50

Part Number M23269/09-

Grade 2

FRL=P(0.1)

4134

4135

4136

4137

4138

4139

4140

4141

4142

4143

4144

4145

4146

4147

4148

4149

4150

4151

4152

4153

4154

4155

4156

4157

4158

4159

4160

4161

4162

4163

4164

4165

4166

01-6 PPL 17

September, 1984
M23269/09, STYLE CYR431

Fixed, Glass Dielectric, Established Reliability

Capacitance

Value

(PF)

330

390

470

560

680

Tolerance

(± %)

I

2

5

1

2

5

1

2

5

1

2

5

1

2

5

Rated

Voltage

(volts, dc)

100

Part Number M23269/09-

Grade 2

FRL=P(0.1)

4301

4302

4303

4304

4305

4306

4307

4308

4309

4310

4311

4312

4313

4314

4315

Capacitance

Value

(PF)

820

1000

1200

Tolerance

(± %)

1

2

5

1

2

5

1

2

5

Rated

Voltage

(volts, dc)

50

Part Number M23269/09-

Grade 2

FRL=P(0.1)

4316

4317

4318

4319

4320

4321

4322

4323

4324

NOTE:

1. Dissipation factor 0.1%

01-7 PPL 17

September, 1984
Index of Preferred Connectors

Style

G311P10

311P409

311P407

NLS

NB

NBS

Description

Power Connectors, Solder Contacts (sub-miniature)

Power Connectors, Crimp Removable Contacts (sub-miniature)

Power connectors, Crimp Removable Contacts

(sub-miniature High Density)

High Density, Miniature

Miniature (200°C)

Electrical, Miniature, Circular (200°C)

Specification

GSFC S-311-P-10

GSFC S-311-P-4/9

GSFCS311P-4/7

MSFC 40 M38277

MSFC40 M39569

MSFC 40 M38298

Refer To

Page 02-2

Page 02-3

Page 02-4

MIL-STD-975

MIL-STD-975

MIL-STD-975

NOTES:

1. OTHER PARTS ARE LISTED IN MIL-STD-975, BUT GSFC CONSIDERS ONLY THE ONES LISTED ABOVE AS

STANDARD PARTS.

02-1 PPL 17

September, 1984
Rack

POWER CONNECTORS

and Panel, Sub-Miniature, Solder Contacts

Construction

Receptacle,

Rectangular

Plug,

Rectangular

Contacts

Qty.

9

15

25

37

50

9

15

25

37

50

Type

Socket

Socket

Socket

Socket

Socket

Pin

Pin

Pin

Pin

Pin

For Use With

Wire Size

AWr\il\GJ #2 £.\J0 II1U maAx •

Grade 1 & Grade 2

GSFC Type1

G311P10B-1S-C-15

G311P10B-2S-C-15

G311P10B-3S-C-15

G311P10B-4S-C-15

G311P10B-5S-C-15

G311P10-1P-C-15

G311P10-2P-C-15

G311P10-3P-C-15

G311P10-4P-C-15

G311P10-5P-C-15

Specification

GSFC

S-31 i-p-io

Manufacturer

ITT Cannon

Electric

TRW Cinch

Connectors

Remarks

All GSFC type connectors:

"-15" in type indicates 0.154 inch

(0.39 mm) dia. mounting hole,

0.120 inch (0.31 mm) dia. is

available; indicated by "-12."

NOTES:

1. C = 20 gamma residual magnetism level; other levels B = 200 and 0 = 2 gamma are available.

02-2 PPL 17

September, 1984
POWER CONNECTORS

Rack and Panel, Sub-Miniature, Crimp Removable Contacts

Construction

Receptacle,

Rectangular

Plug,

Rectangular

Contacts

Qry.

9

15

25

37

50

9

15

25

37

50

Type

Socket

Pin

For

Use

With

Wire

<;;•».=

AWG #

20-

22-

94

Grade 1 & Grade 2

Shell

GSFC Type1

311P409

•1S-B-15

-2S-B-15

-3S-B-15

-4S-B-15

-5S-B-15

-1P-B-15

-2P-B-15

-3P-B-15

-4P-B-15

-5P-B-15

GSFC

Specification

S-311-P-4/9

Contact

GSFC

Type

G10S1

G10P1

GSFC

Specification

S-311-P-4/10

Manufacturer

AMP, Inc.

ITT Cannon

Electric

TRW Cinch

Connectors

Remarks

All GSFC type connectors:

"-15" type indicates 0.154 inch

(0.39 mm) dia. mounting hole,

0.120 inch (0.31 mm) dia. is

available; indicated by "-12."

NOTES:

1. 8 - 200gamma residual magnetism level. Other levels are available; if required, consult the parts specialist.

02-3 PPL 17

September, 1984
POWER CONNECTORS

Rack and Panel, Sub-Miniature, High Density, Crimp Removable Contacts

Construction

Receptacle,

Rectangular

Plug,

Rectangular

Contacts

Qty.

15

26

44

62

78

104

15

26

44

62

78

104

Type

Socket

Pin

For

Use

With

Wire

c;7e

AWG

 #

22-

24-

26-

28

Grade 1 & Grade 2

Shell

GSFC Type'1

311P407

-1S-B-15

-2S-B-15

-3S-B-15

-4S-B-15

-5S-B-15

-6S-B-15

-1P-B-15

-2P-B-15

-3P-B-15

-4P-B-15

-5P-B-15

-6P-B-15

Specification

GSFC

S-3H-P-4/7

Contact

GSFC

Type

G08S1

G08P1

Specification

GSFC

S-3H-P-4/8

Manufacturer

Amp, Inc.

Remarks

All GSFC type connectors:

"-15" type indicates 0.154 inch

(0.39 mm) dia. mounting hole,

0.120 inch (0.31 mm) dia. is

available; indicated by "-12."

NOTES:

1. B = 200 gamma residual magnetism level. No other residual magnetism levels are available for this type of connector.

02-4 PPL 17

September, 1984
Index of Preferred Filters1

-

 2

-

 3

Style

FS11

FS50

Description

Electromagnetic Interference Suppression

Electromagnetic Interference Suppression

Specification

MIL-F-28861/1

MIL-F-28861/5

Refer To

MIL-STD-975

MIL-STD-975

NOTES:

1. MIL-STD-975 LISTS THE MIL-F-18327 BAND PASS FILTER. GSFC CONSIDERS ONLY THE ONES LISTED ABOVE AS STANDARD PARTS.

2. Presently, there are no Grade 1 filters. Non-standard part approval and up-grading are required for intended use of the Grade 2 devices in a

Grade 1 program. See Appendix A for recommended up-grading procedures.

3. a. THE TORQUE USED IN MOUNTING THESE FILTERS IS CRITICAL. EXCESSIVE TORQUE CAN DAMAGE THE INTERNAL CAPACITOR.

USE THE MINIMUM TORQUE NECESSARY FOR THE MECHANICAL CONNECTION TO CREATE A GOOD ELECTRICAL CONNECTION

TO GROUND. IN NO CASE SHOULD THE TORQUE EXCEED THE LIMIT GIVEN IN THE DETAIL SPECIFICATION. FOR MORE

INFORMATION, CONSULT THE PARTS SPECIALIST.

b. THE FILTERS MUST BE TREATED AS BEING HEAT SENSITIVE. HEAT SINK THE DEVICE WHEN SOLDERING TO THE FILTER.

03-1 PPL 17

September, 1984
Index Of Preferred Fuses

Style Description Specification Refer To

FM04A

FM08A

Fuse, Subminiature

Fuse, Subminiature

MIL-F-23419

MIL-F-23419

Page04-2

Page 04-2

04-1 PPL 17

September, 1984
FUSE

Subminiature7

(Axial Leads)

Current

Rating3'

6

(Amperes)

1/8

1/4

3/8

1/2

3/4

1

1-1/2

2

2-1/2

3

4

5

7

10

15

/VIQXI •"

mum

Rated

Voltage

(Volts)

125

32

Maximum

O^hrtrt[ IUI L

Circuit

Interrupt

Current

@ Rated

VDC

(Amperes)

300

Grade 11-

4

Voltage

Drop

@ Rated

Current

(Min-Max)

(Volts)

.55-7.75

.530-. 800

.527-713

.488 -.660

.145-. 197

.157-. 21 3

.153-. 207

.144-. 196

.125-. 169

.139-. 187

.110-. 150

.087-. 118

.087-.118

.073-.099

.065-.087

Maximum

Cold

Resistance

(ohms)

2.31

.781

.462

.308

.187

.138

.088

.0605

.0462

.0388

.0253

.0154

.0110

.0066

.0044

Mil Part Number

FM08A 125V 1/8A

FM08A 125V 1/4A

FM08A 125V 3/8A

FM08A 125V 1/2A

FM08A125V 3/4A

FM08A125V 1A

FM08A125V 1-1/2A

FM08A125V 2A

FM08A125V 2-1/2A

FM08A125V 3A

FM08A125V 4A

FM08A125V 5A

FM08A125V 7A

FM08A125V IDA

FM08A32V 15A

Specification

Note 6

MIL-F-23419/8

Manufacturer

QPL-23419

Grade 22

Voltage

Drop

@ Rated

Current

(Min-Max)

(Volts)

.85-1.15

.544-.73B

.527 -.7 13

.510-.690

.134-. 182

.157-. 213

.153-. 207

.144-. 196

-

.128-. 173

.110-. 150

.087-. 118

Maximum

Cold

Resistance

(ohms)

2.70

.960

.560

.365

.215

.165

.105

.072

-

.047

.029

.019

Mil Part Number

FM04A 125V 1/8A

FM04A 125V 1/4A

FM04A 125V 3/8A

FM04A 125V 1/2A

FM04A125V 3/4A

FM04A125V 1A

FM04A125V 1-1/2A

FM04A125V 2A

Note 5

FM04A125V 3A

FM04A125V 4A

FM04A125V 5A

Specification

Note 6

Ml L-F -234 19/4

Manufacturer

QPL-23419

Note 5

NOTES:

1. GSFC requires additional screening for Grade 1 applications per Appendix C, Table 04.

2. GSFC requires additional screening for Grade 2 applications per Appendix C, Table 04.

3. Refer to Appendix B, Table 04 for Fuse Derating outline for all applications.

4. GSFC recommends the use of redundant circuits for critical flight applications.

5. No Grade 2 part exists at the present time. Use the listed Grade 1 part.

6. THE FLIGHT USE OF FUSES RATED 54 AMPERE AND LESS REQUIRES APPLICATION

APPROVAL BY THE APPLICABLE GSFC PROJECT OFFICE. EVIDENCE OF ACTUAL

CURRENT LEVELS (INCLUDING STEADY-STATE, REPETITIVE PULSES AND TRANSIENTS)

MUST BE SUBMITTED WITH THE APPROVAL REQUEST.

7. Subminiature fuses are not mechanically rugged and are susceptible to handling and assembly

damage. Use special handling and soldering for these heat sensitive parts.

04-2 PPL 17

September, 1984
Index ol Preferred Inductors

Style

MIL-T-27/146

MS213671

MS213681

MS213691

MS905381

MS905391

MIL-C-39010/01

MIL-C-39010/02

MIL-C-39010/03

MIL-C-39010/06

MIL-C-39010/07

Description

Audio Frequency, High Q

Coil, Fixed, Radio Frequency, Micro Miniature, Shielded, Iron Core

Coil, Fixed, Radio Frequency, Micro Miniature, Shielded, Iron Core

Coil, Fixed, Radio Frequency, Micro Miniature, Shielded, Iron Core

Coil, Fixed, Radio Frequency, Subminiature, Iron Core

Coil, Fixed, Radio Frequency, Subminiature, Iron Core

Coil, Fixed, Radio Frequency, Micro Miniature, Shielded, Phenolic Core

Coil, Fixed, Radio Frequency, Micro Miniature, Shielded, Iron Core

Coil, Fixed, Radio Frequency, Micro Miniature, Shielded, Ferrite Core

Coil, Fixed, Radio Frequency, Micro Miniature, Phenolic Core

Coil, Fixed, Radio Frequency, Micro Miniature, Powdered Iron Core

Specification

MIL-T-27

MIL-C-15305

MIL-C- 15305

MIL-C-15305

MIL-C-15305

MIL-C-15305

MIL-C-39010

MIL-C-39010

MIL-C-39010

MIL-C-39010

MIL-C-39010

Refer To

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

NOTES:

1. MIL-C-15305 PARTS ARE NOT SCREENED AND ARE CONSIDERED TO BE NON-STANDARD PARTS. FOR

SPACE FLIGHT USE THEY MUST BE SCREENED AS OUTLINED IN APPENDIX C, TABLE 05

05-1 PPL 17

September, 1984
Index of Preferred Relays (Grade 1 and Grade 2)

Style

P2/33

P2/37

P2/39

P2/42

P2/47

P2/48

P2/50

P2(06)/19

P2(06)/23

P2(06)/27

P2(06)/35

M39016/6

M39016/9

M39016/11

M39016/12

M39016/13

M39016/14

M39016/15

M39016/20

M39016/21

M39016/29

M39016/30

M39016/31

M39016/38

MS27400

MS27401

MS27742

Description

Latching

Latching

Nonlatching

Nonlatching

Nonlatching

Nonlatching

Latching

Nonlatching

Nonlatching

Latching

Latching

Nonlatching

Nonlatching

Nonlatching

Latching

Nonlatching

Nonlatching

Nonlatching

Nonlatching

Nonlatching

Latching

Latching .

Latching

Nonlatching

Nonlatching

Nonlatching

Latching

Specification

GSFC S311 P2(06)/33

GSF.CS311 P2(06)/37

GSFC S311 P2(06)/39

GSFCS311 P2(06)/42

GSFC S311 P2(06)/47

GSFC S311 P2(06)/48

GSFC S311 P2(06)/50

GSFCS311 P2(06)/19

GSFCS311 P2(06)/23

GSFCS311 P2(06)/27

GSFC S311 P2(06)/35

MIL-R-39016/6

MIL-R-39016/9

MIL-R-39016/11

MIL-R-39016/12

MIL-R-39016/13

MIL-R-39016/14

MIL-R-39016/15

MIL-R-39016/20

MIL-R-39016/21

MIL-R-39016/29

MIL-R-39016/30

MIL-R-39016/31

MIL-R-39016/38

MIL-R-6106

MIL-R-6106

MIL-R-6106

Refer To

Page 06-3

Page 06-3

Page 06-2

Page 06-2

Page 06-2

Page 06-2

Page 06-3

Page 06-2

Page 06-2

Page 06-3

Page 06-3

MIL-STD-9752.

3

Page 06-2'.

 3

MIL-STD-9752.

 3

Page 06-3'.

 3

Page 06-2'.

 3

Page 06-2'.

 3

Page 06-2'.

 3

MIL-STD-9752. 3

MIL-STD-9752'

3

Page 06-3'.

 3

MIL-STD-9752.

3

Page 06-3'.

 3

MIL-STD-9752.

 3

Page 06-2'. 3

Page 06-2'-

 3

Page 06-3'.

 3

NOTES:

1. These military styles are limited to Grade 2 applications. For Grade 1 applications, use equivalent GSFC part

numbers (refer to pages 06-2 and 06-3).

2. These styles listed in MIL-STD-975 are limited to Grade 2 applications. No equivalent Grade 1 parts are currently

available.

3. FOR ALL GRADE 2 PARTS LISTED HERE OR IN MIL-STD-975, THE FOLLOWING SHALL APPLY:

A. THE PURCHASE ORDER SHALL SPECIFY THAT THE PARTS SHALL BE SUPPLIED WITH UNPAINTED

ENCLOSURES, AND NO CADMIUM OR ZINC PLATING (INTERNAL OR EXTERNAL) SHALL BE USED.

B. A DPA SHALL BE PERFORMED PER GSFC S-311-70 (REFER TO APPENDIX A, PAGE A-1 FOR SAMPLING

PLAN).

06-1 PPL 17

September, 1984
Relays, Nonlatching

Electrical Data

Contact

Rating

at 28 vdc

Resistive2

(amps)

1.0"

1.0"

1.0"

2.0"

10.0

10.0

Coil Voltage

Nominal

(vdc)

26.5

18.0

12.0

9.0

6.0

26.5

18.0

12.0

9.0

6.0

26.5

12.0

6.0

26.5

12.0

6.0

28.0

28.0

Pick-up

(max)

(vdc)

18.0

13.5

9.0

6.8

4.5

18.0

13.5

9.0

6.8

4.5

13.5

5.4

2.7

13.5

5.4

2.7

18.0

18.0

Nominal

dc

Coil

Resistance

(ohms)

1560

880

390

220

98

1560

880

390

220

98

720

115

28

1350

210

56

320

290

Mechanical Data

Contact

Form3

2 Form C

(2PDT)

2 Form C

(2PDT)

(4PDT)

2 Form C

(2PDT)

2 Form C

(2PDT)

4 Form C

Package

Type

TO-5

Can

TO-5

Can

Low^

Profile

1/2

Crystal

Can

Crystal

Can

One

Inch

Terminal

Type

Wire

Leads

Wire

Leads

Pins

Solder

Lugs

Solder

Lugs

Pins

Solder

Lugs

Pins

Grade 1

GSFC

Part Number'

P2/39-01

P2/39-02

P2/39-03

P2/39-04

P2/39-05

P-2/48-01

P-2/48-02

P-2/48-03

P-2/48-04

P-2/48-05

P-2/42-03

P-2/42-02

P-2/42-01

P-2/47-01

P-2/47-02

P-2/47-03

P-2(06)/23-01

P-2(06)/23-02

P-2(06)/19-01

P-2(06)/19-02

GSFC

Specification

S-311-P-2I06)

/39

/48

/42

/47

/23

/1 9

Mfr.

Teledyne

Teledyne

Genicom

Genicom

Leach

Leach

Grade 26

MIL

Part Number1

M39016/9-062P

M3901 6/9-061 P

M39016/9-080P

M39016/9-059P

M39016/9-058P

M39016/15-081P

M39016/15-080P

M39016/15-079P

M39016/15-078P

M39016/15-077P

M39016/14-002M

M39016/14-007M

M39016/14-005M

M39016/13-060P

M39016/13-065P

M39016/13-064P

MS27401-13

MS27401-14

MS27400-9

MS27400-10

Specification

MIL-R-39016/9

MIL-R-39016/15

MIL-R-39016/14

MIL-R-39016/13

Mil R filfifi

Mfr.

QPL-39016

OPI fiinfi

Remarks

Coil

Transient

Suppression

NOTES:

1. GSFC part number is for 1.500 inch min. lead/length, whereas the corresponding MIL part number is for 0.500

inch min. lead length.

2. For contact rating for other types of loads (inductive, capacitive, lamp, motor), contact parts specialist.

3. Refer to NARM Engineers' Relay Handbook for definition of forms (example: form C = single pole, double

throw, break before make).

4. Contacts also suitable for low level applications.

5. 15.5 mm x 15.5 mm x 8.1 mm high (.610" x .610" x .320").

6. For Grade 2 parts, see requirements on page 06-1.

06-2 PPL 17

September, 1984
Relays, Latching

Electrical Data

Contact

Rating

at 28 vdc

Resistive2

(amps)

1.0"

1.0"

2.0"

2.04

25.0

Coil Voltage

Nominal

(vdc)

26.5

18.0

12.0

9.0

6.0

26.5

18.0

12.0

9.0

6.0

24.0

12.0

24.0

12.0

24.0

12.0

26.5

28.0

Pick-up

(max)

(vdc)

18.0

13.5

9.0

6.8

4.5

18.0

13.5

9.0

6.8

4.5

18.0

6.8

18.0

6.8

18.0

6.8

13.5

18.0

Nominal

Coil

Resistance

(ohms)

2000

1130

500

280

120

2000

1130

500

280

120

1000

250

1000

250

1000

250

975

450

Mechanical Data

Contact

Form3

2 Form C

(2PDT)

2 Form C

(2PDT)

2 Form C

(2PDT)

4 Form C

(4PDT)

3 Form C

(3PDT)

Package

Type

TO-5

Can

TO-5

Can

1/2

Crystal

Can

Low5

Profile

One

Inch

(~..U~

Terminal

Type

Wire

Leads

Wire

Leads

Solder

Hook

Pins

Solder

Lugs

Pins

Grade 1

GSFC

Part Number1

P2/33-01

P2/33-02

P2/33-03

P2/33-04

P2/33-05

P2/37-01

P-2/37-02

P-2/37-03

P-2/37-04

P-2/37-05

P2/50-01

P2/50-02

P2/50-03

P2/50-04

P2/50-05

P2/50-06 .

P-2(06)/27-01

P-2(06)/35-01

P-2(06)/35-02

oorC

Specification

S-311-P-2I06)

/33

/37

/so

/27

/35

Mfr.

Teledyne

Teledyne

Potter

Brumfield

(AMF)

Genicom

Leach

Grade V

MIL

Part Number1

M39016/12-060P

M39016/12-050P

M39016/12-058P

M39016/12-057P

M39016/12-056P

M39016/29-060P

M39016/29-059P

M39016/29-058P

M39016/29-057P

M39016/29-056P

Note 6

P-2(06)/27-01

MS27742-1

MS27742-2

Specification

MIL-R-39016/12

MIL-R-39016/29

M1L-R-39016/31

MIL-R-6106

Mfr.

QPL-39016

QPL-6106

Coil

Transient

Suppression

NOTES:

1. See Note 1 on Page 06-2.

2. See Note 2 on Page 06-2.

3. See Note 3 on Page 06-2.

4. See Note 4 on Page 06-2.

5. See Note 5 on Page 06-2.

6. Use Grade 1 parts.

7. FOR GRADE 2 PARTS, SEE REQUIREMENTS ON PAGE 06-1.

06-3 PPL 17

September, 1984
Index of Preferred Resistors

Style

RBR

RWR

RCR1

RER

RLR

RTR

RJR

RN(X)2

RZO3

Description

Wire wound, Accurate

Wire wound. Power

Composition

Wire wound, Power, Chassis Mounted Non-inductive and

Inductive winding

Film, General Purpose

Wire wound, Variable

Non-wire wound, variable

Film, High Stability

Fixed Film Networks

Specification

MIL-R-39005

MIL-R-39007

MIL-R -39008

MIL-R-39009

MIL-R-39017

MIL-R-39015

MIL-R -39035

MIL-R-55182

MIL-R-83401

Refer To

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

NOTES:

1. GSFC considers RCR styles at the "S" failure rate suitable for both Grade 1 and Grade 2 applications.

2. GSFC does not consider type "C" terminal material to be readily weldable, and recommends using type "N" in

welding applications. Type "C" and "R" may be used in soldering applications. Styles 75 and 90 are available

only with type "C" terminal material.

3. GSFC considers RZO styles listed in MIL-STD-975 acceptable for use in Grade 2 applications. For Grade 1

applications, consult the Parts Specialist.

07-1 PPL 17

September, 1984
Index of Preferred Diodes1

-

3

Grade 1'

Type

Designation

JANS

Grade 22

Type

Designation

JANTXV

Type No.

IN754A-1

thru

IN759A-1

IN962B-1

thru

IN973B-1

IN645-1

IN647-1

IN649-1

IN746A-1

thru

IN759A-1

IN821-1

IN823-1

IN825-1

IN827-1

IN829-1

IN935B

IN937B

thru

IN940B

IN941B

IN943B

IN944B

IN945B

IN962B

thru

IN992B

IN962B-1

thru

IN973B-1

IN1202A

IN2970B

thru

IN3051B

IN3595

IN3600

IN3821A

thru

IN3828A

IN3891

IN3893

IN4099

thru

IN4135

Description

Small Signal

Zener Voltage Regulator

Voltage Reference

Zener Voltage Reference

Voltage Reference

Zener Voltage Regulator

High Power

Zener Voltage Regulator

Switching

Voltage Regulator

Fast Switching

Power Rectifier

Voltage Regulator

Refer To

MIL-STD-975

MIL-STD-975

Page 08-3

MIL-STD-975

Page 08-2

MIL-STD-975

Page 08-4

Grade 11

Type

Designation

JANS

Grade 22

Type

Designation

JANTXV

Type No.

IN4148-1 IN4148-1

IN4150-1

IN4153-1

IN4245

IN4247

IN4249

IN4306

IN4307

IN4370A-1

thru

IN4372A-1

IN4454-1

IN4460

thru

IN4496

IN4531

IN4565A

thru

IN4569A

IN4570A

thru

IN4574A

IN4614

thru

IN4627

IN4942

IN4944

IN4946

IN4947

IN4948

IN4954

thru

IN4995

Description

Small Signal

Switching

Power

Switching

Voltage Regulator

Switching

Zener Voltage Regulator

Switching

Voltage Reference

Zener Voltage Reference

Voltage Regulator

Fast Switching

Power Rectifier

Voltage Regulator

Refer To

MIL-STD-975

Page 08-7

Page 08-2

MIL-STD-975

Page 08-2

MIL-STD-975

Page 08-2

MIL-STD-975

Page 08-6

MIL-STD-975

NOTES:

1. When no JANS diode is listed on the QPL, a Grade 2 diode may be upgraded for use in Grade 1 applications in

accordance with Appendix A. A non-standard part approval is required.

2. JANTXV diodes must be subjected to the screening verification tests of Appendix E.

3. Refer to Appendix D for information on radiation effects. 08-1 PPL 17

September, 1984
Index of Preferred Diodes'1

-

3

 (continued)

Grade 11

Type

Designation

JANS

Grade 22

Type

Designation

JANTXV

Type No.

IN5139A

thru

IN5148A

IN5285

thru

IN5314

IN5415

thru

IN5420

IN5550

thru

IN5554

IN5611

IN5614

IN5615

IN5616

IN5617

IN5618

IN5619

IN5620

IN5621

IN5622

IN5623

IN5629A

thru

IN5665A

Description

Voltage Variable

Capacitor

Current Regulator

Fast Switching

Power Rectifier

Power Rectifier

Voltage Suppressor

Power Rectifier

Fast Switching

Power Rectifier

Power Rectifier

Fast Switching

Power Rectifier

Power Rectifier

Fast Switching

Power Rectifier

Power Rectifier

Fast Switching

Power Rectifier

Power Rectifier

Fast Switching

Power Rectifier

Zener Voltage

Suppressor

Refer To

Page 08-7

MIL-STD-975

Grade 11

Type

Designation

JANS

Grade 22

Type

Designation

JANTXV

Type No.

IN5711

IN5712

IN5768

IN5770

IN5772

IN5774

IN5804

IN5806

IN5809

IN5811

IN5814

IN5816

IN5907

IN6073

thru

IN6081

IN6100

IN6108

IN6102A

thru

IN6173A

IN6320

thru

IN6336

2N2323A

2N2324A

2N2326A

2N2328A

Description

Schottky

Barrier Switching

Array

High Power

Power Rectifier

Zener Voltage

Suppressor

Fast Switching

Power Rectifier

Array

Transient Voltage

Suppressor

Voltage Regulator

SCR

Refer To

MIL-STD-975

Page 08-6

MIL-STD-975

Page 08-8

MIL-STD-975

Page 08-5

MIL-STD-975

08-2 PPL 17

September, 1984
DIODES

Switching, Silicon1

Grade 1 2

Type

Designation

JANS

Grade 23

Type

Designation

JANTXV

1N3595

1N3600

1IM4306

1N4307

1N4454-1

1N4531

Specification

MIL-S-19500

/241

/231

/278

/284

/1 44

/1 16

Manufacturer

QPL- 19500

Maximum ,- ,

Forward ~

 F°rward

Voltage

 @ ^rrent

(Vdc)

 (mAdc>

0.88

0.86

0.81

0.81

1.0

1.0

50

50

10

10

10

10

Maximum D

n Keverse Reverse ^ ,, ..

Current ©Voltage

(Mdc)

 (Vdc)

0.001

0.10

5.0

5.0

0.1

5.0

125

50

75

75

50

75

Reverse

Recovery

Time (trr)

(nsec)

3000

4

4

5

Capacitance

(pF)

8.0

2.5

2.0

2.0

2.0

4.0

Case

Dwg.

Note 4

4 lead

flat pack

5

8 lead

flat pack

Note 6

DO35

Note 4

Remarks

Two matched discrete hermetically sealed diodes are

encapsulated in a plastic

module .

Four matched discrete

hermetically sealed diodes

are encapsulated in a

plastic module.

NOTES:

1. See MIL-STD-975 for additional types.

2. See Note 1 on Page 08-1.

3. See Note 2 on Page 08-1.

4. This case does not meet the dimensional criteria for any JEDEC outline. See MIL-S-19500 detail specification for case outline dimensions.

5. 11.30mm x 4.37mm x 7.62mm.

6. 11.30 mm x 4.37 mm x 12.45 mm.

08-3 PPL 17

September, 1984
DIODES

Voltage Reference, Silicon

Grade I2

Type

Designation

JANS

Grade 23

Type

Designation

. JANTXV

1N944B

1N945B

Specification

MIL-S-19500

/157

Manufacturer

QPL- 19500

Reference _

Voltage ^ Zener

f

(min/max)

 @ Curren

(Vdc)

 (mAdc>

11.12/12.28 7.5

Voltage ° T Change

 v Temperature

(Vdc)

 e Range

0.024

0.012

-55°C - 150°C

Impedance „ _

Zenet\

^

 @ t;edc;

30 7.5

Case

Dwg.

D07

NOTES:

1. See MIL-STD-975 for additional types.

2. See Note 1 on Page 08-1.

3. See Note 2 on Page 08-1.

08-4 PPL 17

September, 1984
DIODES (Page 1 of 2)

Voltage Regulator, Silicon1

Grade 12

Type

Designation

JANS

Grade 23

Type

Designation

JANTXV3

1N4099

1N4100

1N4101

1N4102

1N4103

1N4104

1N4105

1N4106

1N4107

1N4108

1N4109

1N4110

1N4111

1N4112

1N4113

1N4114

1N4115

1N4116

1N4117

1N4118

1N4119

1N4120

1N4121

1N4122

1N4123

1N4124

1N4125

1N4126

1N4127

1N4128

1N4129

1N4130

1N4131

1N4132

1N4133

1N4134

1N4135

Specification

MIL-S-19500

/435

Manufacturer

QPL- 19500

Nominal

Reference Voltage

Vz (V) @ lz (mA)

6.8

7.5

8.2

8.7

9.1

10.0

11.0

12.0

13.0

14.0

15.0

16.0

17.0

18.0

19.0

20.0

22.0

24.0

25.0

27.0

28.0

30.0

33.0

36.0

39.0

43.0

47.0

51.0

56.0

60.0

62.0

68.0

75.0

82.0

87.0

91.0

100.0

56

51

46

44

42

38

35

32

29

27

25

24

22

21

20

19

17

16

15

14

14

13

12

11

9.8

8.9

8.1

7.5

6.7

6.4

6.1

5.6

5.1

4.6

4.4

4.2

3.8

Max.

Impedance

Z2 (Ohms)

200

100

150

200

250

300

400

500

700

800

1000

1200

1500

Max. Diss.

TA = 25° C

(W)

0.40

Voltage Temp.

Coefficient

(%/°C)

+0.060

+0.065

+0.070

+0.075

+0.080

+0.085

+0.090

+0.095

+0.100

Max.

Storage

Temp.

<°C)

175°C

Case

Dwg.

0014

Remarks

Low Noise Devices

NOTES:

1. See MIL-STD-975 for additional types.

2. See Note 1 on Page 08-1.

3. See Note 2 on Page 08-1.

08-5 PPL 17

September, 1984
DIODES (Page 2 of 2)

Voltage Regulator, Silicon1

Grade 12

Type

Designation

JANS

Grade 23

Type

Designation

JANTXV

IN6320

IN6321

IN6322

IN6323

IN6324

IN6325

IN6326

IN6327

IN6328

IN6329

IN6330

IN6331

IN6332

IN6333

IN6334

IN6335

IN6336

Specification

MIL-S-19500

/533

Manufacturer

QPL- 19500

Nominal

Reference Voltage

Vz (V) @ lz (mA)

6.8 20

7.5 20

8.2 20

9.1 20

10 20

11 20

12 20

13 9.5

15 8.5

16 7.8

18 7.0

20 6.2

22 5.6

24 5.2

27 4.6

30 4.2

33 3.8

Max.

Impedance

Zz (Ohms)

3.0

4.0

5.0

6.0

6.0

7.0

7.0

8.0

10

12

14

18

20

24

27

32

40

Max Diss.

TL - 75°C

(W)

Note 5

0.500

Voltage Temp.

Coefficient

(%/°C)

.062

.068

.075

.076

.079

.082

.083

.079

.082

.083

.085

.086

.087

.088

.090

.091

.092

Max.

Storage

Temp.

(°C)

200

Case

Dwg.

Note 4

Remarks

Low Power

NOTES:

1. See MIL-STD-975 (or additional types.

2. See Note 1 on Page 08-1.

3. See Note 2 on Page 08-1.

4. Microminiature, solid glass, non-cavity construction with dimensions 2.3mm ODX 5mm long.

5. Lead temperature (TL) at 3/8 inch from diode case.

08-6 PPL 17

September, 1984
DIODES

Power Rectifiers, Fast Switching, Silicon1

Grade 12

Type

Designation

JANS

Grade 23

Type

Designation

JANTXV

1 N4942

1 N4944

1N4946

1 N4947

1 N4948

1 N6073

1 N6074

1N6075

1 N6076

1N6077

1 N6078

1 N6079

1 N6080

1N6081

Specification

MlL-S-19500

/359

/503

Manufacturer

QPL- 19500

io

(Adc)

1.0

0.85

1.3

2.0

@TA = 55° C

@TA = 55° C

VRM (wkg)

[V (pk)]

200

400

600

800

1000

50

100

150

50

100

150

50

100

150

Reverse

Recovery

Time

(trr)

(nsec)

150

150

150

250

500

30

Maximum D

S-w

1.0

1.0

5.0

10.0

200

400

600

800

1000

50

100

150

50

100

150

50

100

150

IFSM

(1/1 20 sec)

(Apk)

10

15

10

35

75

175

Case

Dwg.

DO15

Note 4

NOTES:

1. See MIL-STD-975 for additional types.

2. See Note Ion Page 08-1.

3. See Note 2 on Page 08-1.

4. This case does not meet the dimensional criteria for any JEDEC outline. See MIL-S-19500 detail specification for case outline dimensions.

08-7 PPL 17

September, 1984
DIODES

Power, Silicon1

Grade 12

Type

Designation

JANS

Grade 23

Type

Designation

JANTXV

1N4245

1 N4247

1 N4249

Specification

MIL-S- 19500

7286

Manufacturer

QPL- 19500

Maximum

Forward

Voltage

[V (pk)]

1.3

Forward

Current

[A(pk|]

3.0

Maximum Reverse Current

25°C n 150°C "ef

rse

(MAdc)

 @ (mAdc) ® V

(°jge

1.0 .15

200

600

1000

Reverse

Recovery

Time trr

(Msec)

5

Case

Dwg.

D015

DIODES

Voltage Variable Capacitor, Silicon

Grade 12

Type

Designation

JANS

Grade 23

Type

Designation

JANTXV

1N5139A

1N5140A

1N5141A

1N5142A

1N5143A

1N5144A

1N5145A

1N5146A

1N5147A

1N5148A

Specification

MIL-S- 19500

/383

Manufacturer

QPL- 19500

Nominal Cap.

@VR = 4Vdc

(pF)

6.8

10

12

15

18

22

27

33

39

47

Cap. Ratio

VR =4v to 60v

(times)

2.7

2.8

3.2

Max. Cont.

Work. Volts

VR (volts)

60

Min. Q

@f = 50MHz

VR = 4vdc

350

300

250

200

Max.

Diss.

(W)

TA = 25°C

0.4

Max.

Temp.

(°C)

175°C

Case

Dwg.

DO 7

NOTES: 1. See MIL-STD-975 for additional types.

2. See Note 1 on Page 08-1.

3. See Note 2 on Page 08-1.

08-8 PPL 17

September, 1984
DIODES

Switching, Silicon1, Arrays

Garde 12

Type

Designation

JANS

Grade 23

Type

Designation

JANTXV

1N6101

Specification

MIL-S-19500

/517

Manufacturer

QPL-19500

Maximum _ . Forward

Forward <g>

Voltage (mAd )

(Vdc)

1.0 100

Maximum

Reverse ,

Current

(ijAdc)

25

Reverse

v Voltage

(Vdc)

20

Reverse

Recovery

Time (trr)

(nsec)

5

Capacitance

(pF)

3

Case

Dwg.

Note 4

Remarks

Monolithic

NOTES:

1. See MIL-STD-975 for additional types.

2. See Note 1 on Page 08-1.

3. See Note 2 on Page 08-1.

4. PLackage is 16-pin ceramic dual in-line package (DIP).

08-9 PPL 17

September, 1984
Index of Preferred Transistors'. 3

Grade 1'

Type

Designation

JANS

2N918

2N2219AL

2N2222A

2N2369A

2N2905AL

2N2907A

Grade 22

Type

Designation

JANTXV

2N718A

2N918

2N1613

2N2060

2N2219A

2N2222A

2N2369A

2N2432A

2N2484

2N2605

2N2857

2N2880

2N2905A

2N2907A

2N2920

2N2944A

2N2945A

2N2946A

2N3019

2N3251A

2N3375

2N3468

2N3501

2N3553

2N3637

2N3700

2N3716

2N3741

Description

Low Power— NPN

RF-NPN

Medium Power— NPN

Dual- NPN

Medium Power— NPN

Lower Power— NPN

Chopper- NPN

Low Power— NPN

Low Power- PNP

RF-NPN

High Power- NPN

Medium Power— PNP

Low Power— PNP

Dual-NPN

Chopper— PNP

Chopper- PNP

Chopper— PNP

Medium Power— NPN

Low Power— PNP

RF-NPN

Low Power- PNP

Low Power— NPN

RF-NPN

Medium Power-PNP

Low Power— NPN

Low Power— NPN

High Power-PNP

Refer To

Page 09-2

MIL-STD-975

Page 09-3

MIL-STD-975

Page 09-4

MIL-STD-975

Page 09-3

MIL-STD-975

Page 09-3

MIL-STD-975

Grade I1

Type

Designation

JANS

Grade 22

Type

Designation

JANTXV

2N3743

2N3749

2N3763

2N3765

2N3792

2N3810

2N3811

2N3821

2N3822

2N3823

2N3866

2N3868

2N3996

2N4150

2N4399

2N4416A

2N4856

2N4857

2N4858

2N4931

2N4957

2N5038

2N5114

2N5115

2N5116

Description

Low Power— PNP

High Power- NPN

Medium Power— PNP

Low Power— PNP

High Power-PNP

Dual- PNP

Dual-PNP

J-FET(N-CH)

J-FET (N-CH)

J-FET(N-CH)

RF-NPN

Medium Power— PNP

High Power— NPN

Medium Power— NPN

High Power-PNP

J-FET (N-CH)

J-FET (N-CH)

J-FET (N-CH)

J-FET (N-CH)

Medium Power— PNP

RF-PNP

High Power- NPN

J-FET (P-CH)

J-FET (P-CH)

J-FET (P-CH)

Refer To

Page 09-3

MIL-STD-995

Page 09-2

MIL-STD-975

Page 09-2

MIL-STD-975

Gtade 1'

Type

Designation

JANS

Grade 22

Type

Designation

JANTXV

2N5250

2N5415S

2N5416

2N5660

2N5662

2N5664

2N5665

2N5666

2N5667

2N5672

2N5745

2N6308

2N6546

4N23

4N23A

4N24

4N24A

4N47

4N48

4N49

Description

High Power- NPN

Low Power— PNP

Low Power— PNP

High Power- NPN

Medium Power— NPN

High Power- NPN

High Power- NPN

High Power- NPN

High Power- NPN

High Power- NPN

High Power-PNP

High Power- NPN

High Power- NPN

Photocoupler

Refer To

Page 09-4

Page 09-2

MIL-STD-975

Page 09-4

Page 09-3

MIL-STD-975

Page 09-4

MIL-STD-975

NOTES:

1. When no JANS transistor is listed on the QPL, a Grade 2 transistor may be upgraded for use in Grade 1

applications in accordance with Appendix A. A non-standard part approval is required.

2. JANTXV transistors must be subjected to the screening verification of Appendix E.

3. Refer to Appendix D for information on radiation effects.

09-1 PPL 17

September, 1984
TRANSISTORS

NPN, Silicon, Low Power1

Grade 12

Type

Designation

JANS

Grade 23

Type

Designation

JANTXV

2N718A

Specification

MIL-S- 19500

7181

Manufacturer

QPL- 19500

hFE

(min/max)

40/120

@

ic

(mAdc)

150

VCE

(Vdc)

10

ICBO

(nAdc) <3

10

VCB

> (Vdc)

60

VCE(SAT)

(Vdc)

1.5

@

ic

(mAdc)

150

IB

(mAdc)

15

BVcBO

(Vdc)

75

PT

<S>TA - 9^°r

(mW)

500

Case

Dwg.

TO18

TRANSISTORS

PNP, Silicon, Low Power1

Grade 12

Type

Designation

JANS

Grade 23

Type

Designation

JANTXV

2N3251A

2N3765

2N5415S

Specification

MIL-S- 19500

/323

7396

/485

Manufacturer

QPL- 19500

hFE

(min/max)

100/300

40/140

30/120

@

ic VCE

(mAdc) (Vdc)

-10

-500

-50

-1

-1

-10

ICBO ,5,

 VCB

(nAdc) ® (Vdc)

-20

-100

500^A

-40

-30

200

VCE (SAT)

(Vdc)

-0.25

-0.5

-2.0

@

ic IB

(mAdc) (mAdc)

-10

-500

-50

-1

-50

-5

BVcBO

(Vdc)

-60

350

PT

@TA = 25°C

(mW)

360

500

750

Switching Time

ton

(nsec)

70

43

1000

toff

(nsec)

250

115

140

Case

Dwg.

T018

TO46

T05

TRANSISTORS

PNP, Silicon, Medium Power1

Grade 12

Type

Designation

JANS

Grade 23

Type

Designation

JANTXV

2N3763

2N3868

2N4931

2N3743

Specification

MIL-S- 19500

/396

/350

/397

Manufacturer

QPL-19500

hFE

(min/max)

40/140

30/150

50/200

50/200

@

ic VCE

(mAdc) (Vdc)

-500

-1500

-30

-30

-1

-2

-10

-10

ICBO ^ VCE

(nAdc)

 @ (Vdc)

-100

-

C

I

EOXOO=

-500

-500

-30

VCE = -eovdc

-200

-300

VCE (SAT)

(Vdc)

-0.5

-1.2

-1.2

@

ic IB

(mAdc) (mAdc)

-500

-30

-30

-50

-3

-3

BVCBO

(Vdc)

-60

-250

-300

PT

@TA = 25°c

(mW)

1.0

Switching Time

ton

(nsec)

43

100

toff

(nsec)

115

600

not specified

Not specified

Case

Dwg.

TO 5

T039

T039

NOTES:

1. See Ml L-STD-975 for additional types.

2. See Note 1 on Page 09-1.

3. See Note 2 on Page 09-1.

09-2 PPL 17

September, 1984
TRANSISTORS

NPN, Silicon, Medium Power1

Grade 12

Type

Designation

JANS

Grade 23

Type

Designation

JANTXV

2N1613

2N3019

2N5662

Specification

MIL-S- 19500

/181

/391

/454

Manufacturer

QPL- 19500

hFE

(min/max)

40/120

100/300

40/120

<a

lc VCE

(mAdc) (Vdc)

150

150

500

10

10

5

'CBO _

 VCB

(nAdc)@(Vdc)

10

ICES

 =

10nAdc

100

60

VCE =

90Vdc

200

VCE (SAT)

(Vdc)

1.5

0.2

0.4

@

lc IB

(mAdc) (mAdc)

150

150

1000

15

15

100

BVCBO

(Vdc)

75

140

250

PT

@TA =25°C

(mW)

800

1200

Switching Time

ton

(nsec)

toff

(nsec)

not specified

250 850

Case

Dwg.

T05

TRANSISTORS

PNP, Chopper, Low Power, Silicon1

Grade 12

Type

Designation

JANS

Grade 23

Type

Designation

JANTXV

2N2944A

2N2946A

MIL-S- 19500

/•3OO

Manufacture

DPI iQ^nn

her

(min)

100

50

@

lc

(mAdc)

VCE

(Vdc)

n c.

(max)

(Ohms)

4

8

f = 1kHz

i_ — n IE u

@> and

IB U

(mAdc) (M A)

1 inn

(max)

(Vdc)

-0.6

-2.0

<£

IE

(mAdc)

o

IB

(mAdc)

i

BVnorv

(Vdc)

-15

-40

p<t-

"T

@TA = 25°c

(mW)

4nn

Case

Dwg.

TOdfi

NOTES:

1. See MIL-STD-975 for additional types.

2. See Note 2 on Page 09-1.

3. See Note 3 on Page 09-1.

09-3 PPL 17

September, 1984
TRANSISTORS

NPN, Silicon, High Power1 3

Grade 12

Type

Designation

JANS

Grade 23

Type

Designation

JANTXV

2N2880

2N5250

2N5660

2N6546

Specification

MIL-S-19500

/315

7380

/454

/525

Manufacturer

QPL- 19500

hFE

(min/max)

40/120

30/90

40/120

16/30

<°>

ic VCE

(Adc) (Vdc)

1

20

0.5

10

5

5

5

2

ICBO a -VCB

(mAdc) ® (Vdc)

0.0004

ICES =

0.1 mAdc

0.0001

1

80

VCE =

125 Vdc

200

600

VCE (SAT)

(Vdc)

0.25

1.0

0.4

1.5

<5>

lc IB

(Adc) (Adc)

1

40

1

10

0.1

4

0.1

2

BVcBO

(Vdc)

110

125

250

300

@TC =

T

25°C

(Watts)

30@

TC=125°C

350

20@

TC = 125°C

175

Case

Dwg.

Note 4

Note 4

T066

T03

TRANSISTORS

PNP, Silicon, High Power1

Grade 12

Type

Designation

JANS

Grade 23

Type

Designation

JANTXV

2N3741

2N3792

2N5745

Specification

MIL-S-19500

/441

/379

/433

Manufacturer

QPL- 19500

hFE

(min/max)

30/100

50/150

15/60

@

ic VCE

(Adc) (Vdc)

-0.250

-1

-10

-1

-2

-2

ICBO @ VCB

(mAdc)

 L (Vdc)

-0.0001

ICES =

-1mAdc

-1

-80

VCE =

-70Vdc

-80

VCE(SAT)

(Vdc)

-0.6

-1

-1

<a

ic IB

(Adc) (Adc)

-1

-5

-10

-0.125

-0.5

-1

BVcBO

(Vdc)

-80

• PT

@TC = 25°C

(Watts)

25

150

200

Switching Time

ton

(/u sec)

0.4

1.5

1.0

toff

(AI sec)

1.0

2.0

3.0

Case

Dwg.

T066

T03

NOTES:

1. See MIL-STD-975 'or additional types.

2. See Note i on Page 09-1.

3. See Note 2 on Page 09-1.

4. This case does not meet the dimensional criteria for any JEDEC outline. See MIL-S-19500 detail specification for case outline dimensions.

09-4 PPL 17

September, 1984
TRANSISTORS

Field-Effect, N-Channel, Junction, Silicon^

Grade 12

Type

Designation

JANS

Grade 23"

Type

Designation

JANTXV

2N3821

2N3822

2N4857

2N4858

Specification

MIL-S-19500

/375

/385

Manufacturer

QPL-19500

VDG and VDS

(max)

(Vdc)

50

40

VGS

(max)

(Vdc)

-50

-40

IG

(mA)

10

50

VGs(off)

max.

(Vdc)

-4

-6

-4

@

VDS ID

(Vdc) (nA)

15 0.5

IDSS

(min/max)

(mA)

0.5/2.5

2/10

20/100

8/80

@

VDS VGS

(Vdc) (Vdc)

15 0

PT

(mW)

300

360

Case

Dwg.

T072

T018

NOTES:

1. See MIL-STD-975 for additional types.

2. See Note 1 on Page 09-1.

3. See Note 2on Page 09-1.

09-5 PPL 17

September, 1984
INDEX TO PREFERRED MICROCIRCUITSi 2,3.4

DIGITAL

(Generic Part Numbers Shown)

Low Power Schottky.TTL

54LSOO 54LS51 54LS139 54LS241 54LS395

54LS02 54LS54 54LS148 54LS244 54LS490

54LS03 54LS73 54LS151 54LS245 54LS670

54LS04 54LS74 54LS153 54LS251

54LS05 54LS75 54LS156 54LS253

54LS08 54LS76 54LS157 54LS257

54LS10 54LS83A 54LS158 54LS258

54LS11 54LS85 54LS160 54LS259

54LS12 54LS86 54LS161 54LS266

54LS13 54LS90 54LS162 54LS273

54LS14 54LS92 54LS163 54LS279

.54LS15 54LS93 54LS164 54LS283

54LS20 54LS95 54LS165 54LS290 '

54LS21 54LS96 54LS166 54LS293

54LS22 54LS107 54LS174 54LS295

54LS26 54LS109 54LS175 54LS298

54LS27 54LS112 54LS190 54LS348

54LS28 54LS113 54LS191 54LS365

54LS30 54LS114 54LS192 54LS366

54LS32 54LS122 54LS193 54LS367

54LS37 54LS123 54LS194 54LS368

54LS38 54LS126 54LS195 54LS375

54LS42 54LS132 54LS197 54LS390

54LS47 54LS138 54LS240 54LS393

Advanced Low Power Schottky, TTL (Refer to page 10-4)

54ALSOO 54ALS08 54ALS20 54ALS133

54ALS02 54ALS10 54ALS27 54ALS138

54ALS04 54ALS11 54ALS30 54ALS200A

54ALS244A

5401 5423 5470 54121 54163

5406 5425 5472 54145 54180A ' "

5407 5450 5477 54150

5416 5453 5482 54154

CMOS/Bulk

4000A 4019A 4069UB"

4002A 4020A 4070B

4006A 4021 A 4071 B

4007A 4022A 4072B

4008A 4023A 4073B

4009A 4024A. 4075B" .

4010A 4025A 4077B"

4011 A 4027A 4081 BR

401 3A 4031 A 4082BR

401 4A 4043A 4085BR

401 5A 4049A 4086B"

401 6A 4050A 4098B"

4018A 4066A 4099BR

4502BR

(Refer to page 10-5)

4001 B 401 2BR 40308"."

4017B" 4020B"

Memory

• Prom, Schottky TTL

82S126 82S131 82S181

82S129 82S136 82S185

82S130 82S137 82S191

82S2708

• Ram, Schottky TTL

QQI /I09 Q*3I A99A Q*3I A'jf*

yj \J\££. JoLH^lH 3OL*i£D

...._„ 93L415

• Ram, NMOS

MK2164

Microprocessor, NMOS

8080A 8086 Z80A Z8002

Microprocessor, I2L

9989

Hybrid

(Refer to page 10-3)

NOTES:

1. All parts are listed in MIL-STD-975 except as referenced otherwise. The parts must be purchased to the part

numbers specified in MIL-M-38510.

2. When no Grade 1 microcircuit is listed, a Grade 2 microcircuit may be upgraded for use in Grade 1 applications

in accordance with Appendix A. A non-standard part approval is required.

3. Refer to Appendix D for information on radiation effects.

4. The part types marked with superscripts R and H can be procured as radiation hard parts, hardened to 1 x 105 rads

and 1 x 106 rads, respectively.

10-1 PPL 17

September, 1984
INDEX TO PREFERRED MICROCIRCUITSi-2,3,4 (Continued)

LINEAR

BIPOLAR AND BI-FeT

Operational Amplifiers

HA2600 LM101A

HA2101A LM108A

HA2500 LM118

HA2510 LM124

HA2520 LM148

LF155 LM741

LF156 LM747A

LF156A LM1558

LF157A LH2101A

Line Drivers

9614

55113

Voltage Regulators

LM109 LM120K-15

LM723 LM140H-12

LM120H-05 LM140H-15

LM120H-12 LM140K-05

LM120H-15 LM140K-12

LM120K-05 LM140K-15

LM120K-12

Line Receivers Precision Timers

9615 555

55107 556

55108

Voltage Comparators

LM111

LM139

LM710

DAC Switches

08 155 A

08A 200

201

10-2 PPL 17

September, 1984
HYBRID MICROCIRCUITS

Hybrid microcircuits are defined as microcircuits in which the circuits elements are contained on more than one

die or chip, as compared to a monolithic microcircuit where all the circuit elements are contained on a single

die. A hybrid microcircuit generally contains an insulating substrate or substrates on which are deposited a

conductor network and sometimes thick film resistors. Semiconductor dice and sometimes passive elements

are attached to the substrate. Additional connections are made between the active and passive elements, the

substrate, and the package leads using interconnection wires. Hybrid microcircuits are normally low volume

non-standard parts. A non-standard part approval is required for all non-standard types. General requirements

for hybrid microcircuits are presented in GSFC specification S-311-200.

10-3 PPL 17

September, 1984
MICROCIRCUITS

Digital, MIL-M-38510 Advanced Low Power Schottky TTL

Commercial

Part Number'

54ALSOO

54ALS02

54ALS04

54ALS08

54ALS10

54ALS11

54ALS20

54ALS27

54ALS30

54ALS133

54ALS240A

54ALS244A

54ALS138

Function

Gates

Buffers

Decoders

NAND, quad 2-input

NOR, quad 2-input

Hex Inverter

And, quad 2-input

NAND, Triple 3-input

AND, Triple 3-input

NAND, dual 4-input

NOR, Triple 3-input

NAND, 8-input

NAND, 13-input

Octal, inverting buffer

Octal, noninverting buffer

Single 3 to 8 line decoder

Grade 1

Part No. ManuJANM38510 facturer

Note 3

Grade 2

Part No.2

JANM38510

/37001BXX

/37301BXX

/37006BXX

/37401 BXX

/37002BXX

/37402BXX

/37003BXX

/373002BXX

/37004BXX

/37005BXX

/38301BXX

/38303BXX

/37701BXX

Manufacturer

Per

QPL-38510

NOTES:

1. Use the JANM38510 part number for ordering, not the commercial part number.

2. The "XX's" are for choice of case outline and lead finish respectively. Refer to QPL-38510 for specific choices

available.

3. No Grade 1 version of this part is presently being supplied by any manufacturer. The Grade 2 part may be used

for Grade 1 applications by upgrading in accordance with Appendix A. A non-standard part approval is required.

10-4 PPL 17

September, 1984
MICROCIRCUITS

Digital, MIL-M-38510 CMOS'*

Commercial

Part Number'

4001 B

4012B"

4030B".

 H

4017BR

4020B"

Function

Gates

Counter/

Dividers

NOR, quad, 2-input

NAND, dual, 4-input

Exclusive-OR Gate Quad

Decade Counter/ Divider

14-stage ripple-carry binary

Grade 1

Part No.

JANM38510

Note 3

Manufacturer

Per

QPL-38510

Grade 2

Part No.2

JANM38510

/05252BXX

/05052BXX

/05353BXX

/05651BXX

/05653BXX

Manufacturer

Per

QPL-38510

NOTES:

1. Use the JANM38510 part number for ordering, not the commercial part number.

2. The "XX's" are for choice of case outline and lead finish respectively. Refer to QPL-38510 for specific choices

available.

3. No Grade 1 version of this part is presently being supplied by any manufacturer. The Grade 2 part may be used for

Grade 1 applications by upgrading in accordance with Appendix A. A non-standard part approval is required.

4. The part types marked with superscripts R and H can be procured as radiation hard parts, hardened to 1 x 105

rads and 1 x 106 rads, respectively. See QPL for additional information.

10-5 PPL 17

September, 1984
Index of Preferred Thermistors

Style

311P18

RTH

Description

Thermistor, Insulated, Negative Temp. Coeff.

Thermistor, Insulated, Positive Temp. Coeff.

Specification

GSFC S311-P-18

MIL-T-23648

Refer To

Page 14-2

MIL-STD-975

14-1 PPL 17

September, 1984
THERMISTORS1

Temp.

Coeff.

Neg.

Resistance

(ohms)

2252

2252

3000

3000

5000

5000

10000

10000

30000

30000

Tolerance

at 25°C

(±%)

1

0.5

1

0.5

1

0.5

1

0.5

1

0.5

Operating

Temperature

Range

<°C)

-55 to 90

-55 to 70

-55 to 90

-55 to 70

-55 to 90

-55 to 70

-55 to 90

-55 to 70

-55 to 90

-55 to 70

Resistance

Ratio

R

25°C/RMAX

10.93

5.71

10.91

5.71

10.91

5.71

9.23

5.03

10.72

5.60

Grade 1 and Grade 2

Part Number2

311P18-01LXXX

311P18-02LXXX

311P18-03LXXX

311P18-04LXXX

311P18-05LXXX

311P18-06LXXX

311P18-07LXXX

311P18-08LXXX

311P18-09LXXX

311P18-10LXXX

Specification

GSFC

S-311-P-18

Manufacturer

Yellow

Springs

Instrument

NOTES:

1. WARNING: Use heat sinks when soldering or welding to thermistor leads.

2. The complete part number is 311P18- AA L XXX

DASH NUMBER LEAD STYLE:

(01,02, etc.) S= 32 AWG, Type C per MIL-STD-1276

T= 28 AWG, Type ET per MIL-W-1687-16878

N= 32 AWG, Type N-2 per MIL-STD-1276

E = Insulated lead (TFE), 32 AWG per

MIL-1-22129; Bare lead, Style S; Tubing

(FEP),M23053/11-105c.

LEAD LENGTH:

Specify length in centimeters.

1RO = 1.0, 10R = 10, 101 = 100.

Minimum length is 7.6cm.

14-2 PPL 17

September, 1984
Index of Preferred Transformers

Style1

M27/103

M27/165

M27/166

M27/197

M21 038/9-005

Description

Audio Frequency

Audio Frequency

Audio Frequency

Audio Frequency

Pulse, Low Power

Specification

MIL-T-27

MIL-T-27

MIL-T-27

MIL-T-27

MIL-T-21038

Refer To

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

NOTES:

1. The purchase order must specify that 100% screening is required. Otherwise, when unscreened parts are purchased,

they shall be subjected to screening tests, as outlined in Table 15 of Appendix C prior to use.

15-1 PPL 17

September, 1984
Index of Preferred Wire/Cable^

Style

M22759/9

M22759/18

M22759/32/33/34/35

S311P13

M22759/3/11/

12/22/23

M22759/16

M81381

M 16878

M5086

M17

M27500-

Description

Wire, High temperature

Wire, Light weight, ETFE

Wire, Lightweight, crosslinked ETFE

Wire, High voltage

Wire, Extruded TFE

Wire, ETFE

Wire, Fluorocarbon-Polyimide

Wire, High Temperature

Wire, PVC insulated

Cable, RF, Flexible, Coaxial

Cable, Electrical, Shielded and Unshielded

Specification

MIL-W-22759

MIL-W-22759

MIL-W-22759

GSFC S-311-P-13

MIL-W-22759

MIL-W-22759

MIL-W-81381

MIL-W-16878

MIL-W-5086

MIL-C-17

MIL-C-27500

Refer To

Page 16-2

Page 16-3

Pages 16-3, 4, 5

Page 16-

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

MIL-STD-975

NOTES:

1. GSFC WAIVES THE RESTRICTIONS AND REQUIREMENTS OF MIL-STD-975 ON THE USE OF SILVER

COATED COPPER CONDUCTOR WIRE AND CABLE.

2. Flammability properties of these wires are controlled by the applicable specifications. However, applications in

Space Transportation System (STS) payloads may require that the specific STS flammability hazards be addressed.

Users are advised to consult the appropriate project systems safety officer.

16-1 PPL 17

September, 1984
WIRE

Electrical, Insulated, High Temperature

Style1

M22759/9-22-X

M22759/9-20-X

M22759/9-18-X

M22759/9-16-X

Strands

No. x AWG

 #

19x3 4

19x3 2

19x3 0

19x2 9

Diameter over

Insulation, mm

Minimum

1.47

1.68

1.93

2.11

Maximum

1.57

1.78

2.03

2.21

Voltage Rating,

Maximum

(volts/RMS)

1000

Specification

MIL-W-22759

/9

Grade 1 Grade 2

Manufacturer

QPL-22759/9

Remarks

NOTES:

1. For the "X" suffix, substitute the appropriate color code designator from MIL-STD-681 (listed on page 16-7).

PPL 17

fctember, 1984
WIRE

Electrical, Insulated, Lightweight (Page 1 of 3)

Style'

M22759/18-26-X

M22759/18-24-X

M22759/18-22-X

M22759/18-20-X

M22759/18-18-X

M22759/18-16-X

M22759/18-14-X

M22759/18-12-X

M22759/18-10-X

Strands

No. x AWG

 #

19x38

19 x 36

19 x 34

19 x 32

19 x 30

19x29

19x2 7

37x28

37x26

Diameter over

Insulation, mm

Minimum

.762

.864

1.04

1.24

1.50

1.65

2.01

2.57

3.15

Maximum

.864

.965

1.14

1.35

1.60

1.75

2.11

2.67

3.25

Voltage Rating,

Maximum

(volts/RMS)

600

Specification

MIL-W-22759

/1 8

Grade 1 Grade 2

Manufacturer

QPL-22759/18

Remarks

Tin-coated

copper conductor

Insulated with

extruded ETFE

Maximum temperature 1 50°C;

suitable for use

as hookup wire. .

NOTES:

1. For the "X" suffix, substitute the appropriate color code designator from MIL-STD-681 (listed on Page 16-7).

16-3 PPL 17

September, 1984
WIRE

Electrical, Insulated, Lightweight (Page 2 of 3)

Style1

M22759/32-30-X

M22759/32-28-X

M22759/32-26-X

M22759/32-24-X

M22759/32-22-X

M22759/32-20-X

M22759/32-18-X

M22759/32-16-X

M22759/32-14-X

M22759/32-12-X

M22759/33-30-X

M22759/33-28-X

M22759/33-26-X

M22759/33-24-X

M22759/33-22-X

M22759/33-20-X

Strands

MIMUn. v A AAVVVJf AWfi*r

7x3 8

7x3 6

19x38

19 x36

19 x34

19x32

19x30

19x29

19x27

37 x28

7x38

7x3 6

19x38

19x36

19x34

19x32

Diameter over

Insulation, MM

Minimum

.559

.635

.762

.889

1.04

1.22

1.47

1.68

2.08

2.54

.559

.635

.762

.889

1.04

1.22

Maximum

.660

.737

.864

.991

1.14

1.37

1.63

1.83

2.29

2.74

.660

.737

.864

.991

1.14

1.37

Voltage Rating,

Maximum

(volts, RMS)

600

600

Specification

|\/1 1 1 \ A/ O9~7CQ

iviiL-vv-zz/Dy

/32

/33

Grade 1 Grade 2

Manufacturer

QPL-22759

QPL-22759

Remarks

Tin-coated

copper conductor,

insulated with

crosslined ETFE

Maximum temperature

150°C

Silver coated

high strength copper

alloy, Insulated with

crosslinked ETFE

Maximum temperature

150°C

NOTES:

1. For the "X" suffix, substitute the appropriate color code designator from MIL-STD-681 (Listed on Page 16-7).

16-4 PPL 17

September, 1984
WIRE

Electrical, Insulated, Lightweight (Page 3 of 3)

Style'

M22759/34-24-X

M22759/34-22-X

M22759/34-20-X

M22759/34-18-X

M22759/34-16-X

M22759/34-14-X

M22759/34-12-X

M22759/34-10-X

M22759/34-8-X

M22759/34-6-X

M22759/34-4-X

M22759/34-2-X

M22759/34-1-X

M22759/34-0-X

M22759/34-00-X

M22759/35-26-X

M22759/35-24-X

M22759/35-22-X .

M22759/35-20-X

Strands

Mn v A\A/rc# tMU. A /AVVOrr

19x36

19 x34

19x32

19x30

19x29

19x27

37 x28

37x26

133x29

133x27

133 x 25

665 x 30

817 x 30

1045 x 30

1330 x 36

19 x38

19x36

19x34

19x32

Diameter over

Insulation, mm

Minimum

1.09

1.12

1.42

1.70

1.88

2.31

2.74

3.30

4.75

5.87

7.62

9.88

10.90

11.91

13.39

.965

1.09

1.22

1.42

Maximum

1.19

1.37

1.57

1.85

2.08

2.51

2.95

3.61

5.16

6.38

8.13

10.70

11.71

12.73

14.30

1.07

1.19

1.37

1.52

Voltage Ratings

Maximum

(Volts/RMS)

600

600

Specification

•MIL-W-Zii/b yi|| %»/ OOTCQ

a

/34

/35

Grade 1 Grade 2

Manufacturer

QPL-22759

QPL-22759

Remarks

Tin-coated

copper conductor

Insulated with

crosslinked ETFE.

Maximum temperature

150°C

Silver-coated High

Strength Copper Alloy

Insulated with

crosslinked ETFE.

Maximum temperature,

200 °C.

NOTES:

1. For the "X" suffix, substitute the appropriate color code designator from MIL-STD-681 (listed on page 16-7)

except that for sizes 2 and larger the braid color shall be dark green and the designator shall be 5D.

16-5 PPL 17

September, 1984
WIRE

Electrical, Insulated

Stylet

S311P13-XX-30-Z

S311P13-XX-28-Z

S311P13-XX-26-Z

S311P13-XX-24-Z

S311P13-XX-22-Z

S311P13-XX-20-Z

S311P13-XX-18-Z

S311P13-XX-16-Z

S311P13-XX-14-Z

S311P13-XX-12-Z

S311P13-XX-10-Z

S311P13-XX-8-Z

S311P13-XX-6-Z

S311P13-XX-4-Z

S311P13-XX-2-Z

S311P13-XX-0-Z

S311P13-XX-00-Z

600 Volt

Strands

No . x AWG *

7 x38

7x3 6

7 x34

19x3 6

19x3 4

19x3 2

19x3 0

19x2 9

19 x 27

37x2 8

—

—

_

—

—

—

—

Diameter over

Insulation, mm .

Max.

.71

.79

.89

1.04

1.22

1.42

1.68

1 .88

2.29

2.84

—

— •

—

—

—

—

^

1000 Volt

Strands

No . x AWG

 #

_,_

7 x36

7x3 4

19x3 6

19x3 4

19x32

19x30

19x2 9

19x2 7

19x2 5

37 x 26

133 x 29

_

_

—

—

—

Diameter over

Insulation, mm.

Max.

.86

1.04

1 .17

1.35

1.55

1 .88

2.08

2.49

3.23

3.61

5.28

—

—

—

—

—

2500 Volt

Strands

No . x AWG

 #

—

—

19x3 6

19x3 4

19x32

19 x30

19x2 9

19 x 27

19x2 5

37x2 6

133 x 29

133 x27

133 x 25

665 x 30

1045 x30

1330x30

Diameter over

Insulation, mm .

Max .

—

—

1.50

1.80

2.03

2.29

2.54

3.00

3.71

4.19

5.79

7.06

8.53

10.1

12.4

14.2

Specification

c;<;Fr \J jr v*.

S-311-P-13

Grade 1 Grade 2

Manufacturer

Raychem Corp.

Remarks

Tin-coated,

copper conductor .

Insulated with

crosslinked

polyalkene .

Max. Temp. 135°C

Suitable for use in

wire harnesses .

NOTES:

l/ The.complete part number is S311P13-XX-YY-Z

VOLTAGE RATING

01 =600 volts

02 = 1000 volts

03 = 2500 volts

WIRE SIZE

AWG#

COLOR CODE

See page 16-7

16-6 PPL 17

September, 1984
Color Code Designators

for Wire According to MIL-STD-681

Base

Color

Block

Brown

Red

Orange

Yellow

Green

Blue

Violet

Gray

White

White

White

White

White

White

White

White

White

White

1st

Stripe

Black

Brown

Red

Orange

Yellow

Green

Blue

Violet

Gray

2nd

Stripe

Designator

0

1

2

3

4

5

6

7

8

9

90

91

92

93

94

95

96

97

98

Base

Color

White

White

White

White

White

White

White

White

White

White

White

White

White

White

White

White

White

White

White

White

White

1st

Stripe

Black

Black

Black

Black

Black

Black

Black

Black

Brown

Brown

Brown

Brown

Brown

Brown

Brown

Red

Red

Red

Red

Red

Red

2nd

Stripe

Brown

Red

Orange

Yellow

Green

Blue

Violet

Gray

Red

Orange

Yellow

Green

Blue

Violet

Gray

Orange

Yellow

Green

Blue

Violet

Gray

Designator

901

902

903

904

905

906

907

908

912

913

914

915

916

917

918

923

924

925

926

927

928

Base

Color

White

White

White

White

White

White

White

White

White

White

White

White

White

White

1st

Stripe

Orange

Orange

Orange

Orange

Orange

Yellow

Yellow

Yellow

Yellow

Green

Green

Green

Blue

Blue

2nd

Stripe

Yellow

Green

Blue

Violet

Gray

Green

Blue

Violet

Gray

Blue

Violet

Gray

Violet

Gray

Designator

934

935

936

937

938

945

946

947

948

956

957

958

967

968

16-7 PL 17

September, 1984
APPENDIX A

Upgrading Grade 2 Devices

for Use in Grade 1 Applications

Both PPL-17 and MIL-STD-975 have sections in which no Grade 1 part is listed. This Appendix lists what is recommended by GSFC to upgrade a Grade 2 part for use in a Grade 1 application. In most cases, GSFC guidelines are the same as those in MIL-STD-975. Where differences exist, they are defined in the appropriate paragraphs. In addition, the PPL provides

upgrading alternatives to those described in MIL-STD-975 for semiconductor devices. Upgraded

parts should be identified by a special marking on each piece or on the package. Where package

marking is used, parts control procedures must be instituted so that the identity of upgraded parts

is not lost. In all cases, the upgrading of a Grade 2 part for use in a Grade 1 application requires

a non-standard part approval request.

For the upgrading of diodes, transistors, microcircuits and filters, GSFC requires the sampling plan for destructive physical analysis (DPA) to be based on a "lot". A lot is defined as all

parts with identical part numbers and lot-date codes.

The sampling plan for DPA, used in this Appendix, is taken from GSFC S-311-70. The sample sizes shown below apply to all methods of upgrading of semiconductor devices given in this

Appendix.

Lot Size No. Samples

<T~ I

5-15 2

16-50 3

>50 5

A-1 PPL 17

September, 1984
UPGRADING GUIDELINES

Section 1 — CAPACITORS

For styles listed in MIL-STD-975, see Appendix B of that document. For styles listed in

PPL-17, where the appropriate Failure Rate is not available, a non-standard part approval is required to use a part with the next higher failure rate.

Section 3 — FILTERS

Grade 2 filters listed in PPL-17 and MIL-STD-975 may be upgraded for use in Grade 1 applications by performing the following additional sequence of tests and examinations:

(a) Visually examine the filters externally, for any damage or evidence of poor workmanship

in accordance with 4.6.1.1 of MIL-F-28861.

(b) Radiographic examination in accordance with 4.6.8 of MIL-F-28861.

(c) Thermal shock test in accordance with 4.6.2.1 of MIL-F-28861. The filters shall be

mounted in accordance with 4.6.2.1b, therein. Following the test and measurements, the

filters shall be maintained in their torqued and mounted configuration for the subsequent

voltage conditioning tests.

(d) Voltage condition the filters for 168 hours in accordance with 4.6.2.2.2 of MIL-F-28861.

In addition to the electrical measurements required after the conditioning, visually examine the filters for any damage or evidence of physical degradation.

(e) Hermeticity tests on hermetically sealed filters in accordance with 4.6.9b of MIL-F-28861.

The fine leak rate shall not exceed 1 x 10~7 atm cc/sec, and there shall be no continuous

stream of bubbles emanating from the filter during gross leak tests.

(f) Destructive physical analysis in accordance with Appendix D of MIL-F-28861, except that

the sample size shall be as shown on page A-l of this Appendix.

Section 4 — FUSES

GSFC considers the fuses in Section 4 of PPL-17 to be suitable for Grade 1 use when they

are screened according to Table 04 in Appendix C.

A-2 PPL 17

September, 1984
Section 5 — INDUCTORS

For styles listed in MIL-STD-975, see Appendix B of that document.

Section 6 — RELAYS

If it is not possible to use one of the S-311-P-2(06) relays listed in PPL-17, then consult the

parts specialist for advice in selection of a suitable relay.

Section 7 — RESISTORS

(a) When the appropriate Failure Rate is not available, a non-standard part approval is required to use the next higher available rate.

(b) For resistor networks listed in MIL-STD-975, see Appendix B of that document, except

that a DPA shall be performed on a sample prior to the upgrading tests. See page A-l of

this Appendix for the DPA sample size.

Section 8 — DIODES

Grade 2 JANTXV diodes listed in PPL-17 and MIL-STD-975 may be upgraded for use in

Grade 1 applications by two methods:

(a) In accordance with Appendix B of MIL-STD-975.

(b) When a procurement consists of not more than 200 parts, perform destructive physical

analysis on samples in accordance with GSFC S-311-70. Rescreen the JTXV diodes to the

JANS screening requirements (except for internal visual inspection and stability tests).

Power burn-in test on all parts in the lot should be extended to 360 hours with a P.O.A.

of 10 percent. Measurements of electrical parameters for which delta limits are prescribed

shall be made before and after the burn-in. All other electrical measurements should be

made only at the completion of the burn-in with limits as specified in the detail specification.

Referring to note 1, MIL-STD-975, Page B.4, diodes can be upgraded for Grade 1 use

without first rescreening them to Grade 2 level. If they have been subjected to screening verification tests (Appendix E), then tests already completed do not have to be repeated in upgrading the

parts to Grade 1.

A-3 PPL 17

September, 1984
Section 9 — TRANSISTORS

Grade 2 JANTXV transistors listed in PPL-17 and MIL-STD-975 may be upgraded for use in

Grade 1 applications by two methods:

(a) In accordance with Appendix B of MIL-STD-975.

(b) When a procurement consists of not more than 200 parts, perform destructive physical

analysis on samples in accordance with GSFC S-311-70. Rescreen the JTXV transistors to

the JANS screening requirements (except for internal visual inspection and stability tests).

Power burn-in test on all parts in the lot should be extended to 360 hours with a P.O.A.

of 10 percent. Measurements of electrical parameters for which delta limits are prescribed

shall be made before and after the burn-in. All other electrical measurements should be

made only at the completion of the burn-in with limits as specified in the detail specification.

Referring to note 1, MIL-STD-975, Page B.4, transistors can be upgraded for Grade 1 use

without first rescreening them to Grade 2 level. If they have been subjected to screening verification tests (Appendix E), then tests already completed do not have to be repeated in upgrading the

parts to Grade 1.

Section 10 — MICROCIRCUITS

Grade 2 microcircuits may be upgraded for use in Grade 1 applications by two methods:

(a) In accordance with Appendix B of MIL-STD-975.

(b) When a procurement consists of not more than 200 parts, the upgrading requirements

given in Table 3.2 of Appendix B of MIL-STD-975 shall be used except that the DPA, :

therein, shall be replaced with a DPA in accordance with GSFC S-311-70 and the Group

B tests of Appendix B eliminated.

Section 14 — THERMISTORS

For styles listed in MIL-STD-975, consult the parts specialist.

Section 15 — TRANSFORMERS

For styles listed in MIL-STD-975, see Appendix B of that document.

Section 16 — WIRE and CABLE

For styles listed in MIL-STD-975, consult the parts specialist.

MISCELLANEOUS

For device types listed in MIL-STD-975 but not in PPL-17, consult the parts specialist.

A-4 PPL 17

September 1984
APPENDIX B

Parts Derating Factors

This Appendix tabulates GSFC's guidelines for the derating of the parts and device types

listed in MIL-STD-975 and PPL-17. Many of these derating guidelines are identical to those given

in MIL-STD-975. However, where differences occur, the GSFC derating factors shall have

precedence. If a derating factor is not provided here for a specific part type, consult the Parts

Specialist.

B-1 PPL 17

September, 1984
Table 01.

Derating Outline for Capacitors

Dielectric Class

Ceramic (CKR), (CDR), (CCR)

Plastic Film (CRH) (Note 1)

Glass or Porcelain (CYR)

Tantalum (Solid Electrolyte) (CSR)

> 1 ohm/volt effective circuit

impedance (Note 2)

Tantalum (Wet Electrolyte) (CLR)

Tantalum Foil (CLR)

Maximum Ambient

Operating

Temperature °C

85

70

70

Derate to Following Percentage (%)

Rated Voltage

60

60

50

60

60

50

Ripple Voltage

N/A

75

NOTES:

1. CRH styles are not approved for use in circuits where the energy is less than 250 jj joultes.

2. For applications where the effective circuit resistance is less than one ohm per volt, contact the Parts

Specialist.

B-2 PPL 17

September, 1984
Table 02. Derating Outline for Connectors

Number of Contacts

Used in Connector

1 to 4

1 to 4

1 to 4

5 to 14

5 to 14

5 to 14

15 or more

15 or more

15 or more

Contact Size

16

20

22

16

20

22

16

20

22

Maximum Current Per Contact1 (Amperes)

Wire Size (AWG)

16

13.0

9.0

6.5

18

9.2

7.0

5.0

20

6.5

6.0

5.0

5.0

3.7

3.7

22

4.5

4.5

3.5

3.5

2.5

2.5

24

3.3

3.3

2.7

2.7

2.0

2.0

26

2.5

1.9

1.4

28

1.8

1.4

1.0

Maximum Operating Voltage

25% of rated Dielectric

Withstanding Voltage

NOTE:

1. Maximum current may be carried by only 10% of the contacts at one time. At such time, other contacts should be limited to 100mA.

Table 03. Derating Outline for EMI Filters

Class

All Filters

Derate To

50% rated feed through current and

50% rated DC working voltage

Maximum Ambient Temperature

85° C

B-3 PPL 17

September, 1984
Table 04. Derating Outline for Fuses

Subminiature1'

2

-

3

'

4

Fuse Current Rating

(Amperes)

15, 10,7, 5

4,3,214,2

r/2, 1

%

1/2

3/8

1/4

1/8

Derate to the Following

(%) of Rated Current

50%

45%

40%

40%

35%

30%

25%

Remarks

THE FLIGHT USE OF FUSES RATED V4 AMPERE AND

LESS REQUIRES APPLICATION APPROVAL BY THE

APPLICABLE GSFC PROJECT OFFICE.

NOTES:

1. Derating factors are based on data from fuses mounted on printed circuit boards and conformally coated. For other type mountings, consult the parts specialist for recommendations.

2. Derating of fuses also allows for possible loss of internal gases in a space environment, which lowers the blow current

rating and allows for a decrease of current capability with time.

3. Fuse current ratings are based on a measured blow current of 200% rated current for a maximum of 5 seconds to blow the fuse and

a minimum ratio of 4/1 of blow to operating current. The minimum of 4/1 of blow to operating currents corresponds to the 50%

derating factor. An 8/1 ratio of blow to operating currents corresponds to the 25% derating factor for the 1/8 ampere fuse. For

maximum life in critical space applications, GSFC recommends an 8/1 ratio.

B-4 PPL 17

September, 1984
Table 05.

Derating Outline for Inductors/Coils1

Class

Per MIL-C-39010

-

A

B

• Class

Per MIL-C- 15305

O

A

B

Maximum Operating

Temperature

65° C

85° C

105°C

Derate To

50% of Maximum rated voltage .

NOTES:

1. a) Maximum operating temperature equals ambient temperature + temperature rise 4- 10°C (allowance for hot spot).

Compute temperature rise as follows:

Temperature rise (°C) = — (T + 234.5) - (T-t)

b)

Where R = Winding resistance under load

r = No load winding resistance at ambient temperature T(°C).

The insulation classes of MIL style inductive parts have maximum operating temperature ratings which are generally based upon

a life expectancy of at least 10,000 hrs. The maximum operating temperatures in this table are selected to extend the life

expectancy to 50,000 hrs.

Custom made inductive devices shall be evaluated on a materials basis and stressed at levels below the maximum rated operating

temperature for the materials used. Devices having a maximum rated operating temperature in the range of 85° C to 130°C, shall

be derated to: Maximum Operating Temperature (°C) = .75 x Maximum Rated Operating Temperature (°C). For devices with

maximum rated temperatures outside this temperature interval consult the parts specialist for temperature derating recommendations.

B-5 PPL 17

September, 1984
Table 06.

Derating Outline for Relays1

Class

All Relays

Derate To

50% of rated contact current

Remarks

Users are cautioned not to derate coil current or voltage,

can result in non-operation of the device.

as this

NOTES:

1. For additional derating guidelines, see MIL-STD-975, Appendix A.

Table 07.

Derating Outline for Resistors

Type

Carbon composition, Style RCR

Film, General Purpose, Style RLR

Wirewound, Accurate, Style RBR

1 % Tolerance

0.5% Tolerance

0.1% Tolerance, or less

Wirewound, Power, .Chassis Mount, Style RER

Wirewound, Power, Style RWR

Variable Trimmers, Styles RTR & RJR

Film, High Stability, Style RNC

Film, Fixed, Networks, Style R20

Derate To

60% of Rated Power

60% of Rated Power

60% of Rated Power

35% of Rated Power

25% of Rated Power

60% of Rated Power

60% of Rated Power

70% of Rated Current

60% of Rated Power

60% of Rated Power

Remarks

All resistors:

(a) Maximum voltage shall not exceed 80% of the

maximum rated voltage on any resistor.

(b) Resistors with weldable nickel leads shall be

derated by an additional factor of 0.5

B-6 PPL 16

September, 1984
Table 08.

Derating Outline for Diodes

Class

Diodes, Silicon

Rectifiers'

Diodes, Silicon

Small Signal Switching

Diodes, Silicon

Voltage Reference, Voltage Regulator, Current

Regulator, Variable Capacitor

Diodes, Other

Derate to the Following Percentage

Peak Inverse Voltage

75

Junction Temperature

60'.

 2

. 3

Consult project parts engineer for identification of parameters to be derated and recommended derating factors. Derating will

be determined on an individual part type basis.

NOTE 1: All Devices

Derate junction temperature as follows:

Tj(derated) = Derating Factor X (Tj(max)-25°C]+25°C. = Maximum allowable operating junction temperature.

Tj(max) = Manufacturer's specified maximum junction temperature.

NOTE 2: Derate average forward current (lo) to satisfy junction temperature derating calculated in note 1, as follows:

Devices Operated Without Heat Sink (Figure 1 )

loiallowed) ° Derating Factor X lo(max).

 TA < 25°C

lo(allowed) = Derating Factor X lo(max) l-= -

I Tjtde

'o(max)

 = Manufacturer's absolute maximum current rating.

TA • Ambient temperature.

- - zrs^ ,

erated) - 25 CJ

TA > 25°C

Figure 1. Derating curve from MIL-HDBK-217 modified to

show operating region for devices operated without heat sinks

and a Derating Factor of 0.6.

NOTES:

3. In no event shall the junction temperature exceed 125°C.

Devices Operated With Heat Sink (Figure 2)

loiallowedl = Derating Factor X lo(max|. Tease < TD

o o

•n a

loisllowed) = Derating Factor X lo(max) ITcase ' TD 1

Tjlderated) - TDJ

-TCase>TD

TD = Tj(deratedl - Derating Factor (Tj(rnax> - TM)

TO = Case temperature above which IQ must be further derated to satisfy derated junction temperature.

TM = Maximum case temperature at which manufacturer permits full rated current, (lomax).'

loimax)

 = Manufacturer's absolute maximum average forward current.

TCASE —"

Figure 2. Derating curve from MIL-HDBK-217 modified to

show operating region for devices operated with heat sinks

and a Derating Factor of 0.6.

B-7 PPL 17

September, 1984
Table 09.

Derating Outline for Transistors

Class

Silicon NPN, PNP

Low power, Med. power, High power, Switching,

Dual, Complimentary, Chopper, Unijunction.

J-FET, MOSFET, N-Channel, P-Channel, Silicon

General Purpose, Med. Power, High Power,

High Speed Switching

RFNPN,

Other

Derate to the Following Percentage

Voltage

75

Current

75

Power

60

Junction Temperature

60'. 2. 3

Consult project parts engineer for identification of parameters to be derated and recommended derating factors. Derating will

be determined on an individual part type basis.

NOTE 1: All devices:

Derate junction temperature as follows:

Tj(derated) = Derating Factor X [Tj(max)-25°C]+25°C = Maximum recommended operating junction temperature.

Tjmax = Manufacturer's specified maximum junction temperature.

NOTE 2: Derate power dissipation to satisfy the junction temperature derating calculated in Note 1,

Devices operated without heat sink (Figure 1 )

PD (allowed) = Derating Factor X PD (max), TA < 25°C

.

R0J-A

Pnmax = Mfr's absolute maximum power rating.

R0j_A - Junction to ambient thermal resistance from mfr's data sheet ( C/watt).

TA = Ambient temperature.

Slope =

R0JA

Figure 1. Derating curve from MIL-HDBK-217 modified to

show operating region for devices operated without heat sinks

and a Derating Factor of 0.6.

NOTE 3: In no event shall the junction temperature exceed 125°C.

as follows:

Devices operated with heat sink (Figure 2)

PD (allowed) = Derating Factor X Pc(max), Tca.

PD(allowed) . ^(derated)-Tcase > '

R0jc

TD = Tj(derated) - Rflj-c(Derating Factor X Pomax).

TD = Case temperature above which power must be further reduced to satisfy junction temperature requirements.

Pomax = Mfr's specified absolute maximum power rating.

RfiJC

 = Junction to case thermal resistance specified in mfr's data sheet (°C/watt).

Slope •

ROJC

Tjlderated} Tj(max)

Figure 2. Derating curve from MIL-HDBK-217 modified to

show operating region for devices operated with heat sinks

and a Derating Factor of 0.6.

B-8 PPL 17

September, 1984
Table 10

Derating, Outline for Microcircuits1

Microcircuits

Parameters

1. Supply Voltages

2. Supply Current

3. Power Dissipation1

(percent of rated

power at case

temperature)

4. Frequency

(percent of

maximum rating)

5. Output Current

(percent of

rated current)

6. Input Voltage

Digital

BIPOLAR

±5% of

nominal

80%

90%

80%

CMOS

4000

Series

90% of

rated

80%

90%

80%

Interface

A/D

Converters

±5% of

nominal

80%

90%

D/A

Converters

±5% of

nominal

80%

90%

Line

Receivers

±5% of

nominal

80%

90%

80%

Line

Drivers

+ 5% of

nominal

80%

90%

80%

Analog

Switches

90% of

rated

80%

90%

Linear

Opera'l.

Anpl.

80%

of rated

75%

90%

80%

70%

Voltage

Compara

tors

90% of

rated

75%

80%

Voltage

Req.

75%

80%

90%

Analog

Switches

90%

of rated

75%

90%

80%

Processors, Peripherals

and Memories

CMOS

± 5% of

nominal

75%

90%

TTL

±5% of

nominal

75%

90%

NMOS

±5% of

nominal

75%

90%

|2L

± 3% of

nominal

75%

90%

NOTES:

1. The maximum case temperature is 85°C for all microcircuits.

B-9 PPL 17

September, 1984
Table 14.

Derating Outline for Thermistors

(Temperature Sensitive Resistor]

Class

All Thermistors

Derate To

50% of rated power

Table 15.

Derating Outline for Transformers

Class

Per MIL-T-27

Q

R

. .s

Class

Per MIL-T-21038

Q

R

S

Maximum Operating

Temperature^

65° C

85°C

105°C

Derate To

50% of Maximum rated voltage .

NOTES:

1. a) Maximum operating temperature equals ambient temperature + temperature rise + 10°C (allowance for hot spot).

Compute temperature rise as follows: p

Temperature rise (°C) = ^ (T + 234.5) • (T -1)

Where R = Winding resistance under load.

r = No load winding resistance at ambient temperature T(°C).

t = Initial ambient temperature (°C).

T = Ambient temperature at power shutoff. T shall not differ from t by more than 5°C.

b) The insulation classes of MIL style inductive parts have maximum operating temperature ratings which are generally based upon

a life expectancy of at least 10,000 hrs. The maximum operating temperatures in this table are selected to extend the life

expectancy to 50,000 hrs.

c) Custom made inductive devices shall be evaluated on a materials basis and stressed at levels below the maximum rated

operating temperature for the materials used. Devices having a maximum rated operating temperature in the range of 85°C

to 130°C, shall be derated to: Maximum Operating Temperature (°C) = .75 x Maximum Rated Operating Temperature (°C).

For devices with maximum rated temperatures outside this temperature interval consult the parts specialist for temperature

derating recommedations.

B-10 PPL 17

September, 1984
Table 16.

Derating Outline for Wire and Cable

Wire Size

30

28

26

24

22

20

18

16

14

12

10

8

6

4

2

0

00

Derate To - Amperes Maximum

Bundle or Cable

0.7

1.0

1.4

2.0

2.5

3.7

5.0

6.5

8.5

11.5

16.5

23.0

30.0

40.0

50.0

75.0

87.5

Single

1.3

1.8

2.5

3.3

4.5

6.5

9.2

13.0

19.0

25.0

33.0

44.0

60.0

81.0

108.0

147.0

169.0

Remarks

1. Current ratings for bundles or cables are

based on bundles of 15 or more wires at

70°C in a hard vacuum. For smaller

bundles the allowable current may be

proportionally increased as the bundle

approaches a single wire.

2. Deratings listed are for Teflon insulated

wire (TYPE TFE) rated for 200°C.

a.) For 150°C wire, use 80% of value

shown in table.

b.) For 135 °C wire, use 70% of value

shown in table.

c.) For 105 °C wire, use 50% of value

shown in table.

B-11 PPL 17

September, 1984
APPENDIX C

Screening of Non-standard Parts

This PPL is intended to serve as a selection source for standard parts that are properly processed and screened for use in high-reliability space flight applications. Where non-standard parts

are selected for use, proper processing and screening of those parts must be determined and applied. Such determinations are the responsibility of the user, with parts engineering assistance, and

must consider the type of part, its function, its design, construction, and manufacturing, as well as

its significant failure modes and sensitivities. Such a screening program must be developed with the

knowledge of the part's response to use, and to qualification and evaluation testing exercises.

This appendix tabulates a series of recommended screening tests for various types of parts. It

is not the intent to delineate an exacting or all-inclusive set of detailed test procedures and requirements for each of a myriad of possible non-standard part selections. Rather, it is intended to

stimulate the design of a detailed screening regimen to be incorporated in the part procurement

document or screening specification. It brings to bear the combined experiences and knowledge of

GSFC and GSFC contractor parts engineers to act as a guide in developing screening for specific

parts. It is not intended to be a "cookbook" to be applied without careful consideration of the

part to be screened. Furthermore, since there is generally a smaller data base for non-standard

parts than preferred parts, the user must assure himself that the specified screens are nondestructive, appropriate parameters and limits are prescribed, and a lot "Percent Defective

Allowable" (PDA) is included.

Other techniques, such as Destructive Physical Analysis (DPA), Residual Gas Analysis

(RGA), Lot Acceptance Inspections, etc. should be applied where appropriate.

C-1 PPL 17

September, 1984
Table 01.

Screening Outline for Capacitors

^^^^ Test Sequence

Category • ^^^^

(a) Air or Glass, Variable

(b) Ceramic

(c) Glass & Porcelain

(d) Mica

(e) Paper and/or

plastic film

(f) Polycarbonate,

metallized film

(g) Tantalum Electrolytic,

Wet Slug

Foil

(h) Tantalum Electrolytic,

Solid

UiHermetically sealed

(2INon-hermetically sealed

(i) High Voltage Ceramic

(Note 7)

12,3

Initial Examinations

and Electrical Tests

Visual &

C, Q, DWV

IR, Driving Torque

Visual &

C, DF, DWV, IR

Visual &

C, DF

DC Leakage

Visual &

C, DF, IR, DWV,

Corona

2

Thermal Shock

MIL-STD-202,

Method 107

Test Condition A,

except step 3

shall be @ max.

rated temperature

Test Condition B,

except step 1

shall be @ - 55°C

Test Condition A,

except step 3

shall be @ max.

rated temperature

Test Condition A,

except step 3

shall be @ 100°C.

Test

Condition

A

Test Condition

A

38

Seal Leak Tests

MIL-STD-202,

Method 112

N/A

Test Condition D

Test Conditions

C, D

Acid Indicator

test per GSFC

SP 01 .23

Test Conditions

D

Test Condition D

N/A

N/A

4

Radiographic

MIL-STD-202,

Method 209

N/A

In accordance with

MIL-C-39014.

N/A to chip

styles

N/A

In accordance with

MIL-C-19978

N/A

In accordance with

MIL-C-39003

N/A

5 .

Conditioning

N/A

2 x rated voltage @

max. rated temperature for 96 hours

(Note 4)

2 x rated voltage @

125°C for 96 hours

2 x rated voltage @

max. rated temperature for 96 hours

1.4 x rated voltage@

rated temperature

for 96 hours

1 .4 x rated voltage @

100°C for 96 hours

Rated voltage (3>

85° C for 168 hours

Rated voltage

. @ 85°C

(Note 5)

Rated Voltage @ 85°C

and

Surge Current Test

Per MIL-C-39003/6

(Note 6)

Rated Voltage

rated Temperature

100 hours

69

Final Examination

Repeat

Initial

Examination

and

Electrical

Measurements

Reference

Documents

MIL-STD-202

Ml L-C- 14409

MIL-C-20

MIL-C-39014

MIL-C-55681

MIL-C-23269

MIL-C-39001

MIL-C-19978

MIL-C-83421

MIL-C-39006

GSFC

SP 01 .23

MIL-C-39003

GSFC

S-311-P-17(01)

GSFC

S-311-P-15(01)

O Q

§g50 !-•

o 3

c >>

r~ rn

3a

(I/ i ny •

NOTES: i.

2.

3.

4.

5.

6.

7.

8.

C-2 PPL 17

September, 1984

Test procedures and requirements in accordance with those in the applicable Military or NASA referenced document. For additional information see the referenced document.

Legend: C = Capacitance, DF = Dissipation Factor, DWV = Dielectric Withstanding Voltage, IR = Insulation Resistance, Q = Quality Factor (initial electrical tests are optional).

Insulation resistance measurements are normally performed at +25°C, but the option is made to perform this measurement at maximum rated temperature as well.

Voltage conditioning shall be performed using procedures and requirements of MIL-C-39014 Rev. C or later.

Voltage conditioning shall be conducted for 168 hours for polarized styles. For non-polarized styles, voltage conditioning shall be conducted for 192 hours with the voltage polarity reversed after 96 hours.

Surge current testing shall be performed on CSR style capacitors for all Grade 1 applications. Where the effective series resistance is < one ohm/volt, consult Part Specialist.

Testing at high voltage (DWV, corona) shall be limited to the rated voltage.

Seal leak tests apply only to hermetically sealed, unsleeved styles; however, the acid indicator test is required

on all tantalum wet slug styles.

Final IR measurements to be made at both +25°C and at max. rated temperature.
Table 03.

Screening Outline for EMI Suppression Filters2

\ Test

\Sequence

Category^V

Filters, EMI

Suppression

(with Ceramic

Capacitor

Elements)

For Both

Grade 1/

Grade 2 parts

1

Initial Measurements

and examination

1. Visual

2. Dielectric Withstanding

Voltage (DWV)

3. Capacitance (when

applicable)

4. Dissipation Factor

(DF) (when applicable)

5. Insulation Resistance

(IR) at + 25°Cand optional at max. rated

temperature.

6. D.C. Resistance

7. Radiographic examination, Grade 1 only.

2

Thermal Shock3'

4

As per MIL-STD-202,

Method 107 Test Condition

Condition A; except

that in step 3, sample

units shall be tested at

125°C, or max. rated

temperature.

3

Seal Leak Test

Fine and Gross Leak

tests (applicable to

hermetically sealed

devices only).

4

Voltage

Conditioning^

 6

As per MILSTD-202, Method

108 at test

temperature

+ 125°C, or max.

rated temperature,

±3°C. DC rated

filter is 2X rated

voltage for 164 ± 4

hours. AC rated

filter is 1 .2X rated

voltage for 164 ± 4

hours.

5

Final Measurements

and examination

Repeat initial

examinations and

measurements.

except radiographic

examinations. Final

measurements to be

made at both + 25°C'

and at max. rated

temperature.

Reference

Documents

MIL-F-28861

MIL-STD-202

NOTES:

1. Performance of initial electrical tests is optional.

2. Consult the parts specialist for assistance in screening other types of filters.

3. Filters shall be mounted in a thru-hole and torqued in place on a rigid metal plate to the specified value. Not

applicable to solder-in types.

4. At completion of or during the final cycle and before the filter is removed from the plate, measure and record

insulation resistance at + 125°C, or maximum rated temperature.

5. For voltage conditioning, use the test circuit described in MIL-F-28861, par. 4.6.2.2.2d.

6. After completion of voltage conditioning and while still at + 125°C, or maximum rated temperature, the insulation

resistance shall be measured per MIL-F-28861, par. 4.6.13.

C-3 PPL 17

September, 1984
Table 04.

Screening Outline for Subminiature Fuses'1-

 3

^^-^^ Test

^^ Sequence

Category ^^\^^

Fuses, Subminiature

FM04

1

Initial Measurements2

Perform visual and mechanical inspections per

paragraph 3.5 of MIL-F-23419.

Measure cold resistance at 10% or less of

rated current.

Subject fuses to 100% rated current for not

less than 5 minutes. Maintain current at

this level and measure the voltage drop

within the next 5 minutes. Calculate

 RHOT,,

(voltage drop/rated current).

2

Thermal

Shock

MIL-STD-202

method 107,

condition B

3

Final

Measurements

Repeat Initial

inspection and

measurements

Calculate =

 RHOT2

4

Acceptance Criteria

GSFC recommends using

fuses in lower half of the

voltage drop range

and those where

 RHOT1

and

 RHOT2 differ by less

than 3%

Reference

Documents

MIL-F-23419

MIL-F-23419/4

MIL-F-23419/8

NOTES:

1. Tests shall be designed to minimize the time in excess of 5 minutes that the fuses are subjected to full rated

currents. These fuses should not be operated at rated currents for more than 30 minutes or parts may be degraded

so that fuse life is reduced. MIL-F-23419 specifies minimum life at 110% of Rated Current to be 1.5 hours according

to lot sampling tests. Rated current according to MIL-F-23419 is "the amount of current the fuse will carry

indefinitely without interruption."

2

- Initial electrical tests are optional.

3. For fuses rated Vi ampere and less, time at rated current should be further minimized by measuring parameters at

earliest stable reading.

C-4 PPL 17

September, 1984
Table 05.

Screening Outline for Inductors/Coils

^\^ Test

^^^Sequence

Category v^^

Coils, Fixed,

Molded, RF

Coils, Audio

and Power

1

Initial Measurements

1 . Visual Inspection

2. D . C . Resistance

3. Insulation Resistance (IR)

4. Dielectric Withstanding Voltage (DWV)

5. Inductance (L)

6. Q

7. Self Resonant Frequency (SRF)

1. Visual Inspection

2. D.C. Resistance

3. Insulation Resistance (IR)

4. Dielectric Withstanding Voltage (DWV)

5. Inductance (L)

6. Q

7. Self Resonant Frequency (SRF)

2

Thermal Shock

MIL-STD-202 Method

107, Condition A-l ,

use maximum operating

temperature of coil .

MIL-STD-202 Method 107,

Condition A-1, Use

maximum operating

temperature of coil.

3

Burn-In

MIL-STD-981

Par. 30.1.2.2

MIL-STD-981

Par. 30.1.2.1.2

4

Final Measurements

and Delta

Reject Criteria

Visual Inspection

Repeat initial

measurements .

Reject

AR>±5%

AL>±5%

Visual Inspection.

Repeat initial

measurements.

Reject:

AR>±5%

AL> ±5%

Reference

Document

MIL-C-39010

MIL-STD-981

MIL-T-27

MIL-STD-981

C-5 PPL 17

September, 1984
Table 06.

General Screening Outline for Relays1 6

Test Sequence

Category

Relays - Latching

and Non-Latching

1

Initial

Visual

Examination

a. External

Visual a

b. Pre-Cap

Visual

2

Initial

Seal Leak

Tests

MIL-STD-202

Method 112

Fine leaks

Test Cond. C

Gross leak

Test Cond. D

3

Initial

Electrical

Measurements3

Coil

Resistance

Pull In and

Drop Out

Voltage5

Contact

Resistance

Contact

Transfer

Characteristics

Insulation

Resistance

Dielectric

Strength

4

Sinusodial

Vibration4

10-2000 Hz

30 g peak

5

High Temp

Soak Test

8 hrs. soak

at 125°C

6

Low Temp

Miss Test

1000

operation

miss test

at -65°C

7

Room Temp

Miss Test

5000

operation

miss test

at 25°C

8

Final

Seal Leak

Test

Repeat test

sequence

no. 2

9

Final

Electrical

Measurements

Repeat test

sequence

no . 3

10

Final

Visual

Examination

External

Visual

NOTES:

1. These screening tests are to be performed per GSFC S-311-P2I06) in the sequence shown. When the screening is

performed by the relay manufacturer, the initial external visual (1), seal leak (2) and electrical measurements (3) are

optional. For additional information, consult the Parts Specialist.

2. Pre-cap visuals are applicable only to parts procured to specification, e.g. a source control drawing (SCO), which

includes pre-cap visual accept/reject criteria.

3. The test sequence of electrical measurements is optional; also, the performance of initial electrical measurements is optional.

4. For relays rated at higher than 30g, consult the Parts Specialist for screening g-level.

5. Drop out voltage is not applicable to latching relays.

6. A DESTRUCTIVE PHYSICAL ANALYSIS (DPA) SHALL BE PERFORMED PER GSFC-S-311-70 IF PRE CAP

VISUAL IS NOT PERFORMED.

C-6 PPL 17

September, 1984
Table 07. (Page 1 of 2)

Screening Outline for Resistors

^^-^^ Test

^^•^^^ Sequence

Category -^^^

Resistors, Fixed, Carbon

Comp.

Resistors, Fixed, Film,

General Purpose

Resistors, Fixed, Film,

High Stability

Resistors, Fixed, Wirewound,

Power

Resistors, Fixed,

Wirewound, Power,

Resistors, Fixed,

Wirewound, Power, Chassis

Mount

1

Initial

Measurements

Visual Inspection

Resistance

Visual Inspection

Resistance

Visual Inspection

Resistance

Visual Inspection

Resistance

Visual Inspection

Resistance

Visual Inspection

Resistance

2

Thermal Shock

—

-

MIL-STD-202

Method 107

Cond . F

—

—

-

3

Conditioning

-

1 .5 x rated power at room temperature

for 24 hours .

Mil. equivalent styles:

Style 50, 55, 60: 5 x rated power at

room temperature for 1 hour.

Style 65: 4 x rated power at room

temperature for 1 hour.

Style 70 and 75: 2.25 x rated power

at room temperature for 1 hour.

Style 90: 6.25 x rated power for 5

seconds at room temperature.

1 .0 x rated power for 1 .5 hours on,

0.5 hour off for 100 hours at 25°C.

1 .0 x rated power for 1 .5 hours on,

0.5 hour off for 100 hours at 25°C .

1 .0 x rated "free air" power for 1 .5

hours on, 0.5 hour off for 96 hours

at 25° C .

4

Seal Leak Test1

—

-

MIL-STD-883

Method 1014

Cond. D

(For hermetically

sealed units)

-

-

—

5

Final Measurements and

Delta Reject Criteria

-

Visual Inspection

Resistance

Reject; AR>±0.5%

Visual Inspection

Resistance

Reject: AR>±0.2%

Style 90: AR>±0.05%

Visual Inspection

Resistance

Reject: AR>±0.01%

Visual Inspection

Resistance

Reject: AR>±0.2%

Visual Inspection

Resistance

Reject: AR>±0.2%

Reference

Document

MIL-R-39008

MIL-R-39017

MIL-R-55182

MIL-R-39005

MIL-R-39007

MIL-R-39009

NOTES:

1. For resistors with nontransparent envelopes, perform the dye penetrant leak test of MIL-STD-883, Method 1014,

Cond. D, except substitute the following post exposure inspection procedure:

(a) thoroughly cleanse the resistors to remove external dye;

(b) at a minimum temperature of 80°C rotate the resistors about their longitudinal axes (maintain the longitudinal

axes horizontal) for a minimum of 2 minutes;

(c) Inspect for evidence of dye leakage.

C-7 PPL 17

September, 1984
Table 07. (Page 2 of 2)

Screening Outline for Resistors

^^•^^ Test

^^^.^ Sequence

Category ^^^-^^

Resistors, Variable, Wirewound,

Low Power

Resistors, Variable, NonWirebound, Low Power

Resistors, Fixed

Networks

1

Initial

Measurements

Visual Inspection

Resistance

Visual Inspection

Resistance

Visual Inspection

Resistance

2

Thermal Shock

-

-

MIL-STD-202

Method 107

Cond. B

3

Conditioning

1 watt power for 1.5 hours on, 0.5

hour off for 50 hours at 25°C.

1.5 x rated power for 1.5 hours on,

0.5 hour off for 50 hours at 25°C.

1.0 x rated power for 1.5 hours on,

0.5 hour off for 100 hours at 25°C.

4

Seal Leak Test2

-

-

MIL-STD-202

Method 112

Cond. C

(For hermetically

sealed units)

5

Final Measurements

and Delta Reject Criteria

Visual Inspection, Resistance, Peak

Noise, Continuity, End Resistance,

Torque Reject: AR> ±0.5%

Visual Inspection, Resistance,

Contact Resistance, End Resistance

Torque

Reject: AR> ±2% (char. C)

AR> ±1.5% (char. F)

AR>±1% (char. H)

Visual Inspection, Resistance,

Reject: AR> ±0.25% (char. C)

AR> ±0.50% (char. H)

AR>±2.0% (char. M)

Reference

Document

MIL-R-39015

MIL-R-39035'

MIL-R-83401

C-8 PPL 17

September, 1984
Table 08. (page 1 of 4)

Screening Outline for Diodes1

N. jest

>v Sequence

Part >s.

Cetegory ^v

a. Diodes,

Small Signal,

Silicon

b. Diodes,

Switching,

c. Diodes,

Voltage

Reference,

Silicon

d. Diodes,

Voltage

Regulator,

Silicon

.

Rectifier,

Silicon, (Fast

Recovery or

Gen. Purpose)

1

Internal

Visual

(Precap)

I nspection

MIL-STD750 Method

2074. This

test can only

be performed

by the manufacturer,

when

specified in

procurement

2

Initial Insp.

& Electrical

Parameter

Measurements

1. Visual Insp.

per MILSTD-750

Method 2071.

3X min

2 Electrical

parameter

measurements

(Note 1.)

3

High Temperature

Storage

MIL-STD-750

Method 1032

Store for

48hrs.

(Note 2.)

4

Thermal Shock

(Temperature Cycling)

MIL-STD-202 Method 107

Test Condition C, except 10

cycles; except the maximum

temperature shall be 125°C

(Note 3.)

5

Acceleration

MIL-STD-750

Method 2006,

shall be

20,000 G in

YI orientation

only, one time

above

except

5000G

6

PIND>2

MIL-STD-750

Method 2052

O I for Trade

1 screening.

(Note 4.)

7

Seal Leak Tests

MIL-STD-750

Method 1071.1.

Condition G or

H. Gross Leak:

Test Condition

C.

(Note 5.)

8

Pre-Power and

Reverse Bias BurnIn Electrical

Measurements

Read and

record

VFand IR.

Read and

record

BV and 2.

Read and

record

BV, IR and 2.

Read and

record V, and

IR9

Reverse Bias Burn-In

(Notes 2, 6)

MIL-STD-750 Method

1038 Test Cond. V 72

hrs

Same as above except 96

hrs

\z<* rated value.

Same as above except 96

hrs

U

B

 maximum rated

value.

o o

•n 30

O 2

O >

•JO rO TJ

C >,

> to

r- m

NOTES:

1. Performance of electrical measurements at sequence 2 is optional. Measurements at high and low temperatures are also optional at this point,

however, if performed here they need not be performed in sequence 13. For Grade 1 applications, high and low temperature measurements

shall be made on all parts; whereas LTPD sampling is permissible for Grade 2 applications.

2. Tests shall be conducted at the maximum operating temperature. If parts have leads that are not gold-plated, they may be subject to tarnishing

at temperatures greater than 125°C. Therefore, such parts must be tested in an inert atmosphere. After test, leads should be inspected for

tarnishing, and refinished if necessary.

3. For axial lead glass body diodes, 10 cycles of thermal shock (glass strain) in accordance with MIL-STD-750, method 1056, test condition A,

over the temperature range 0° to + 100°C shall be substituted for this test.

4. Particle Impact Noise Detection (PIND) shall be performed only on parts with internal package cavities.

5. For Grade 2 applications, the seal leak tests may be performed at either test sequence 7 or 14. For Grade 1 applications, the tests must be performed

in test sequence 14; in addition the test may be performed in test sequence 7, as well.

6. Reverse bias remains applied at the end of burn-in until TA reaches 30°C.

C-9 PPL 17

September, 1984
Table OB. (page 2 of 4)

Screening Outline for Diodes

\^ Test

^v. Sequence

Part ^~\^

Category x^

a. Diodes,

Small Signal

Silicon

b. Diodes,

Switching

Silicon

c. Diodes,

Voltage

Reference,

Silicon

d. Diodes,

Voltage

Silicon

e. Diodes, Power

Rectifiers,

Silicon (Fast

Recovery or

Purpose)

10

Post Reverse Bias

Burn-In Electrical

Measurements

Read and record VF and IR.

Read and record BV and Z and calculate

deltas.

Read and record 8V, FR and Z and calculate

deltas.

11

Power Burn-In

MIL-STD-750 Method 1038 Test

specified vr and lo with f =

60 Hz.

TA = 25°C

Same as (a.) above except ltc =

100°C For stud mfg) with 60 Hz

waveform applied to diode.

During the half cycle when the

diode is fwd biased, 10 - max

rated value. During reversed bias

half cycle, vr = max rated value.

12

Post Power Burn-In

Electrical Measurements

Read and record VF and IR and

calculate deltas.

Read and record VF and IR and

calculate deltas.

13

Final Electrical

Parameter Measurements

1.) Measure 25°C electrical

parameters except those

measured in sequence 12

2.) Electrical parameters at

maximum operating

•temperature extremes.

(Note 1)

14

Seal Leak Tests

MIL-STD-750

Method 1071.1.

Fine Leak: Test

Test Condition

C.

(Note 5)

15

Radiography

MIL-STD-750

Method 2076

required for

Grade 1, Optional

16

External

Visual

Examination

MIL-STD-750

Method 2071;

3X min

C-10 PPL 17

September, 1984
Table 08. (page 3 of 4)

Screening Outline for Diodes1

^^ Test

^s. Sequence

Category ^v

f. Diodes,

VoltageVariable

Capacitor,

Silicon

g. Thyristors,

(Silicon

Controlled

Rectifiers)

h. Diodes,

Current

Regulator,

Silicon

i. Diodes,

Switching,

Schottky

Barrier,

Silicon

j. Diodes,

Switching,

PIN

k. Diodes,

Light

Emitting

1

Internal

Visual

(PrecapJ

Inspection

MIL-STD750 Method

2074.

This test

can only be

performed

by manufacturer

when specified

in procurement

document.

2

Initial Insp.

& Electrical

Parameter

Measurements

1.)

Visual Insp.

per MIL-STD750 Method

2071.3Xmin.

2.)

Electrical

parameter

measurements

(Note 1}

3

High Temperature

Storage

MIL-STD-750

Method 1032

Store for 48

hrs.

(Note 2)

4

Thermal Shock

(Temperature Cycling)

MIL-STD-202 Method 107

Test Condition C, except

10 cycles, except

the maximum

temperature

shall be 125°C.

{Note 3)

5

Acceleration

MIL-STD-750

Method 2006

except test

shall be 20,000g

in Y.J orientation

only, one time

only.

Same as

above except

acceleration

in 2,

direction.

6

PIND2

MIL-STD-750

Method 2052

Only for Grade

1 screening

(Note 4)

7

Seal Leak Tests

MIL-STD-750,

Method 1071.1.

Fine Leak: Test

Condition G or

H. Gross Leak:

Test Condition

C.

(Note 5)

MIL-STD-750

Method 1071

Fine Leak: Test

Condition H.

Gross Leak:

Test Condition

E.

(Note 5)

8

Pre-Power and

Reverse Bias BurnIn Electrical

Measurements

Read and

record IR

Read and

record

'RBXM.'FBXM,

VF,VGT,and

'GTRead and

record

Ip

Read and

record

ln and VB

Read and

record

IR and VB.

Read and

record

VF and P0.

9

Reverse Bias Burn-In

I Notes 2, 6)

MIL-STD-750 Method

1038 Test Cond. A. 72

hrs

Same os obove except

96 hrs at TA = 125 C

with ROR and VFBXM

at rated values. Note:

Thyristors which turn

on during this burn-in

shall be rejected.

00

•n »

TJS

o -z.

ss

>r- m &

C-11 PPL 17

September, 1984
Table 08. (page 4 of 4 )

Screening Outline for Diodes

^X. Test

^•^ Sequence

Part ^s*\

Category ^x.

f. Diodes,

VoltageVariable

Capacitor,

Silicon

g. Thyristors,

(Silicon

Controlled

Rectifiers)

h. Diodes,

Current

Regulator,

Silicon

i. Diodes,

Switching,

Schottky

Barrier,

Silicon

j. Diodes

Switching,

PIN

k. Diode,

Light

Emitting

10

Post Reverse Bias

Burn-In Electrical

Measurements

Read and record IR and calculate

delta.

Read and record IHBXM, IFBXM, VGT

and IGT and calculate deltas.

11

Power Burn-In

MIL-STD-750 Method 1038

168 hours at TA - 25°C and PQV

(Peak Operating Voltage) = maximum rated value.

Same as above except

Test Condition B. 168 hours at

TA = 25°C at specified Vr and

10 withf • 60 Hz,

Same as above except

168 hours at:

TA (orTcl =25 C

Ip = 80% of maximum rated

continuous forward current.

12

Post Power Burn-In

Electrical Measurements

Read and record lp-and calculate

delta.

Read and record VB and IR and

calculate deltas.

Read and record VF and IR and

calculate deltas.

Read and record VF and P0 and

calculate deltas.

13

Final

Electrical

Parameter

Measurements

1.) Measure 25°C

electrical

parameters except

those measured in

sequence 12.

2. (Electrical

parameters at

maximum

operating

temperature

extremes. (Note 1)

14

Seal Leak Tests

MIL-STD-750,

Method 1071.1

Fine Leak: Test

Condition G or H.

Condition C.

(Note 5}

MIL-STD-750

Method 1071

Fine Leak: Test

Condition H.

Gross Leak: Test

Condition E

(Note 5)

15

Radiograph

MIL-STD-750

Method 2076

required for' Grade

1 screening

Optional for Grade

2

16

External

Visual

Examination

MIL-STD-750

Method 2071

3X min.

C-12 PPL 17

September, 1984
Table 09. (page 1 of 4)

Screening Outline for Transistors1

\^ Test

^\^ Sequence

Part ^^^

Category ^-^

a. Transistors,

Silicon, NPN,

Low, Medium Power,

Switching or

General Purpose

b. Transistors,

Silicon, PNP,

Low, Medium

Power,

Switching or

General Purpose

c. Transistors,

Silicon, PNP,

High Power

d. Transistors,

Silicon, NPN,

High Power

e. Transistors,

Fie Id -Effect,

Junction,

N -Channel,

Silicon

f. Transistors,

Field-Effect,

Junction,

PrChannel,

Silicon

1

Internal Visual

(Precap) Inspection

MIL-STD-750 Method

2072. (This test can

only be performed by

the manufacturer,

when specified in

procurement

document.)

2

Initial Inspection &

Electrical Parameter

Measurements

1. Visual Inspection

per MIL-STD-750,

Method 2071. 3X

min.

2. Electrical

parameter

measurements (Note

1)

3

High Temperature

Storage

MIL-STD-750

Method 1032

Store for 48 hours

(Note 2}

4

Thermal Shock

(Temperature Cycling)

MIL-STD-202 Method

107

Test Condition C,

except 10 cycles,

except the maximum

temperature shall be

125°C

5

Acceleration

MIL-STD-750 Method

2006 except that test

shall be 20,000 g in Y^

orientation, one

time only. The 1 min

hold-time requirement

shall not apply.

Same as above except

5,000 g.

Same as above except

20,000 g.

6

PIND2

MIL-STD-750

Method 2052

Only for Grade

1 screening

(Note 3}

7

Seal Leak Tests

MIL-STD-750 Method

1071. Fine Leak. Test

Condition G or H. Gross

Leak: Test Condition C.

Only for Grade 2

screening

(Note 4)

Same as above except

fine leak rejection

value of 5 x 10 atm

cc/sec. Only for Grade 2

screening

MIL-STD-750 Method

1071.1 Fine Leak: Test

Condition G or H Gross

Leak: Test Condition C.

Only for Grade 2

screening

NOTES:

1. Performance of electrical measurements at sequence 2 is optional. Measurements at high and low temperatures are also optional at this point;

however, if performed here they need not be performed at sequence 12. For Grade 1 applications, high and low temperature measurements

shall be made on all parts; whereas, LPTD sampling is permissible for Grade 2 applications.

2. Tests shall be conducted at the maximum operating temperature. If parts have leads that are not gold-plated they may be subject to

tarnishing at temperature greater than 125°C. Therefore, such parts must be tested in an inert atmosphere. After test, leads should be

inspected for tarnishing, and refinished if necessary.

3. Particle Impact Noise Detection (PIND) shall be performed only on parts with internal package cavities.

4. For Grade 2 applications, the seal leak tests may be performed at either test sequence 7 or 14. For Grade 1 applications, the tests must be

performed in test sequence 14; in addition, the test may be performed in test sequence 7.

5. Reverse bias remains applied at the end of burn-in until TA reaches 30°C in test sequence 8.

C-13 PPL 17

September, 1984
Table 09. (page 2 of 4)

Screening Outline for Transistors

^X. Test

^•xSequence

Part ^\.

Category ^X.

a. Transistors,

Silicon, NPN,

Low, Medium

Power, Switching

or General

Purpose

b. Transistors,

Silicon, PNP,

Low, Medium

Power, Switching

or General Purpose

Purpose

Silicon, PNP,

High Power

d. Transistors,

Silicon, NPN,

High Power

e. Transistors,

Field-Effect,

Junction,

N-Channel.

Silicon

f. Transistors,

Field-Effect,

-Junction,

P-Channel,

Silicon

8

Reverse Bias Burn-in

(Notes 2, 5)

MIL-STD-750

Method 1039

48 Hours at:

Vpo = 80% of Vpon

I E -0

9

Pre-Burn-ln

Electrical

Measurements

Read and record

ICBO (or ICES

and hFE.

Read and record

IGSS- 'DSS

and IYf»l.

10

Burn-in

(Notes 2, 5)

MIL-STD-750

Method 1039

168 hrs at specified

VCB (or VCE)

and PT (max.

rated power dissipation

at TA).

Same as above except Pj at case

temperature

specified.

Same as above except

at specified V^g and

VDS11

Post Burn-In Tests

Measurements

Read and record ICBO and

hFE and calculate

deltas.

Read and record IGSS, |DSS and IY,SL

and calculate deltas.

12

Final

Electrical Parameter

Measurements

1.) Measure 25°C

electrical

parameters except

those measured in

sequence 11 .

2.) Electrical

parameters at

maximum

operating

temperature

extremes.

(Note 1)

13

Seal Leak Tests

(Note 4}

MIL-STD-750

Method 1071.1. Fine

Leak: Test Condition

G orH Gross Leak:

Test Condition C.

Only for Grade 1

screening

Same as above except

fine teak rejection

value 5 x 10 atm

cc/sec. Only for

Grade 1 screening

Same as above

except Fine Leak: Test

Condition G or H

Gross Leak: Test Condition C.

14

Radiography

MIL— STD— 750

Method 2026

Optional for

Grade 2,

Required for

Grade 1

15

External

Visual

Examination

MIL— STD— 750

Method 2072

3X min.

C-14 PPL 17

September, 1984
Table 09. (page 3 of 4)

Screening Outline for Transistors1

^^^ Test

^x. Sequence

Category ^s.

g. Transistors,

Silicon,

Unijunction

h. Transistors,

Silicon,

Chopper

i. Phototransistor

j. Optically

Coupled

Isolator

1

Internal Visual

(Precap) Inspection

MIL-STD-750 Method

2072. This test can

only be performed

by the manufacturer.

when specified in

procurement document.)

2

Initial Inspection &

Electrical Parameter

Measurements

1. Visual Inspection

per MIL-STD-750

Method 2071.

3X mm.

2. Electrical

parameter

measurements

(Note 1)

3

High Temperature

Storage

(Note 2)

MIL-STD-750

Method 1032

Store for 48 hours.

(Note 2)

4

Thermal Shock

(Temperature Cycling)

MIL-STD-202 Method

107 details.) Test

Conditions C, except

10 cycles, except the

maximum temperature

5

Acceleration

MIL-STD-750 Method

2006 except that test

shall be 20,000 g in YT

orientation, one time

only. The 1 min. holdtime requirement shall

not apply.

6

FIND2

MIL-STD-750

Method 2052

Only for Grade 1

screening

7

Seal Leak Tests

(Note 4)

MIL-STD-750 Method

1071.1. Fine Leak:

Test Condition G or H

Gross Leak: Test

Condition C. Only for

Grade 2 screening.

MIL-STD-750 Method

1071. Fine Leak: Test

Condition H. Gross Leak:

Test Condition C. Only

for Grade 2 Screening

MIL-STD-750 Method

1071.1. Fine Leak: Test

Condition G or H Gross

Leak: Test Condition C.

Only for Grade 2 Screening

o•n 5 20

13 Q

O 2

iP

m

C-15 PPL 17

September, 1984
Table 09. (page 4 of 4)

Screening Outline for Transistors

^•s. Tesl

^•s. Sequence

Part ^x^

Category ^x.

gl Transistors,

Silicon,

Unijunction

h. Transistors;

Silicon,

Chopper

, .

j. Optically

Coupled

Isolator

8

Reverse Bias Burn-in

(Notes 2, 5)

MIL-STD-750 Method

1039 48 Hours at: VCB =

80% of VCBO U = 0

Same as above except

48 hrs at:

V C E =80%ofV C E O

Ee (Incident Radiant

Energy = 0)

Same as above except

Test Condition A.

V C E =80%ofV C E O

g

Pre Burn-tn

Electrical

Measurements

Read and record ltBTO

RBBOandri.

Read and record I ceo

and hFE (inverted).

Rad and record

IQ and 1 1 .

Read and record

Phototransistor

I C (OFF)

1C(ON)

n

FE

LED

'R

10

Burn-in

(Note 2}

MIL-STD-750 Method

1039

168 hrs

at specified Vg2gi

and lg-|. (Maximum

rated power.)

Same as above except

at specified Vpp (or

VCE) andPj. (Max

rated power dissipation at T A ) .

at specified

VQE. Adjust Ee (incident radiant energy)

for PT = 80% of

device dissipation

Same as above

except at

max. rated VCE.

PT = 80% of maximum continous

device dissipation

11

Post-Burn-In

Electrical Measurements

Read and record 1EB20 RBBQ and n

and calculate deltas.

Read and record ICBO and hFE (inverted) and calculate

deltas.

Read and record In and li and calculate deltas

Read Vlc (OFF), IC(ON), hFE, and IR and record and

calculate deltas.

12

Final

Electrical Parameter

Measurements

1.) Measure 25°C

electrical parameters

except those

measured in

sequence 11,

2.) Electrical

parameters of

maximum operating

temperature

extremes. (Note 11

13

Seal Leak Tests

(Note 4)

MIL-STD-750

Method 1071.1.

Fine Leak: Test

Condition G or

H. Gross Leak:

Test Condition C.

MIL— STD 750

Method 1071

Fine Leak: Test

Condition H.

Gross Leak:

C.

MIL-STD-750

Method 1071.1

Fine Leak: Test

Condition G or H

Gross Leak: Test

Condition C.

14

Radiography

MIL-STD-750

Method 2026

Required for

Grade 1

Optional for

Grade2

15

External

Visual

Examination

MIL-STD-750

Method 2072 3X

min.

C-16 PPL 17

September, 1984
Table 10.

Screening Outline For Microcircuits

\ Screening

\

Grade \

\

1

9

\ Screening

\Sequence

Grade \^

1

2

1

Internal Visual

(Precap)

Can only be performed by mfr.

Specify

requirement

MIL-STD-883

Method 2010

Condition A

Same as Grade 1

condition B

2

Electrical

Measurements

(Note 1)

Same as

Grade 1

y

Burn-In

MIL-STD-883

Method 1015

240hrs @ 125°C

(Dynamic) Specify test

cond. and burn-in circuitry

Same as Grade 1 except

160 hrs.

32

Stabilization

Bake

MIL-STD-883

Method 1008

condition C

Same as

Grade 1

10

Interim Electrical

Parameter

Measurements

Remeasure parameters

specified in step 8.

Calculate delta and percent defective.

CMOS only

4

Temperature

Cycling

MIL-STD-883

Method 1010

condition C,

except the maximum temperature

shall be 125°C.

Same as

Grade 1

116.7

Reverse Bias

Burn-In

MIL-STD 883

Method 1015

Condition A

Same as Grade 1

53

Constant

Acceleration

MIL-STD-883

Method 2001

condition E.

Y Orientation only.

Same as

Grade 1

125.8

Final Electrical

Measurements

Measure DC, AC and

delta parameters @

25 °C. Measure DC

parameters @ min. and

max. operating

temperatures.

Same as Grade 1

6

Particle

Impact Noise

Detection

(PIND)

MIL-STD-883

Method 2020

Condition A.

Lot acceptance per

method 2020

Same as

Grade 1

13"

Radiographic

MIL-STD-883

Method 2012

Not required

7"

Seal

MIL-STD-883

Method 1014

Fine Leak: cond. A

or B.

Gross Leak: Cond.

C.

Same as

Grade 1

14

External

Visual

MIL-STD-883

Method 2009

Same as Grade 1

85

Interim

Electrical

Parameter

Measurements

Measure +25°C

DC & AC

parameters and

record parameters

requiring delta

calculations

Same as

Grade 1

NOTES:

1. Performance of electrical measurements at this point is optional. However, if high and low measurements are

performed here, they need not be repeated in sequence 12. High and low temperature DC parameter measurements

shall be made on all parts. AC parameter measurements are only required at +25°C.

2. If parts have leads that are not gold-plated, they may be subject to tarnishing at temperatures greater than 125°C.

Therefore, such parts must be tested in an inert atmosphere. After test, leads should be inspected for tarnishing,

and refinished if necessary.

3. For microcircuit packages having an inner seal or cavity perimeter greater than 2 inches, or a mass greater than 5

grams, refer to MIL-STD-883B, Method 5004, paragraph 3.2 for acceleration instructions.

4. Seal and radiographic tests may be performed in any sequence after PIND test.

5. The parameter measurements and delta calculations required for both grade 1 & grade 2 screening shall include

those parameters and deltas (including measurements for each test condition for each parameter) specified in the

MIL-M-38510 slash sheet for the selected part. If no slash sheet is available for the selected part, model the

parameter and delta requirements from a slash sheet for a similar part type. If no slash sheet is available for

selected or similar part types, consult the Parts Specialist for recommendations.

6. Screening sequence 11 not required except for CMOS parts. Also, for CMOS parts, a Static I and Static II burn-in

is required per MIL-M-38510 for class S devices.

7. The order of the burn-ins for steps 9 and 11 is optional.

8. Min. and Max. operating temperature parameter measurements are optional here if performed in sequence 2. C-17 PPL 17

September, 1984
Table 14.

Screening Outline for Thermistors

"^X. Test

^^•v. Sequence

Category ^\N^

(a) Thermistors,

(Thermally

Sensitive

Register)

(Negative

Temp. Coef.)

(b) Thermistors,

Fixed Silicon

(Positive

Temp. Coef.)

1

External

Visual

Examination

MIL-T-23648

Paragraph

4.6.1

2

Initial

Measurements

Zero-Power

Resistance at

25°C and IR

Zero-Power

Resistance

at 25° C

3

Bake

1 00 hrs at

Maximum

Specified

Operating

Temperature

Not

Required

4

Temperature

Cycle

MIL-STD-202

Method 107

Cond. B

5

Burn-In

Not

Required

1.5 x rated pwr. for 96 hrs at 25°C

6

Final

Measurements

and Tests

Zero-Power

Resistance

at 25° C

7

External

Visual

Examination

MIL-T-23648

Paragraph

4.6.1

C-18 PPL 17

September, 1984
Table 15.

Screening Outline for Transformers1

^\ Test

^x^^ C

Category ^^^^

Transformers, Audio

and Power

Transformers, Pulse,

Low Power

1

Initial Measurements

1 . Visual Examination

2. Dielectric Withstanding

Voltage (DWV)

3. Induced Voltage

4. Insulation Resistance (IR)

5. D.C. Resistance (OCR)

of each winding

6. Primary Inductance (L)

1 . Visual Examination

2. Dielectric Withstanding

Voltage (DWV)

3. Induced Voltage

4. Insulation Resistance (IR)

5. DC Resistance (OCR)

6. Open Circuit Inductance

(OCL)

7. Leakage Inductance

8. Turns Ratio

2

Thermal Shock

MIL-STD-202, Method

107, Test Condition A-l .

Use maximum temperature

specified for transformer

as maximum temperature.

Not

Required

3

Burn-In

MIL-STD-981

Par. 30.1.2.1.

MIL-T-21038

Para. 4.7.4

4

Seal Leak Test

Do not perform these

tests on encapsulated

units. MIL-STD-202,

Method 112. Test

Condition C for Fine

Leak. Test Condition

D for Gross Leak . Use

maximum temperature

specified for transformer

as bath temperature .

MIL-T-21038

Para. 4.7.7

(Gross Leak Test)

5

Final Measurements

and Delta Reject Criteria

Repeat initial examinations

and measurements.

Reject;

AL>±5%

ADCR> ±5%

Repeat initial measurements

and examinations .

Reject;

ADCR> ±5%

D C

Documents

MIL-T-27

MIL-STD-202

MIL-STD-981

MIL-T-21038

C-19 PPL 17

September, 1984
APPENDIX D

Radiation Effects

The charged particles in the natural space environment pose a radiation risk to some electronic parts, because when these particles pass through them, they can significantly degrade their:

performance. Ground radiation tests on different electronic part types have indicated that while

parts like resistors and capacitors show no noticeable degradation, many microcircuits are very

sensitive to ionizing radiation. In comparison with microcircuits, most discrete semiconductor

devices — with some exceptions such as microwave and MOS transistors — show much less

degradation. However, some transistors, particularly small signal types, are very susceptible to

radiation induced failures when operated at low collector currents. Further, the radiation environment seen by a device differs from one application to another depending upon the orbit

parameters and upon location within the spacecraft, i.e., the equivalent shielding between it and

the outside environment. Therefore, while selecting electronic parts, it is necessary not only to consider the device hardness, but also the application and the projected radiation environment for the

application.

In dealing with the natural space environment, designers have to be concerned with two types

of radiation damage, namely total dose effect and single event phenomena. The total dose effect

is due to the cumulative ionization caused by the passage of all the ionizing particles through the

device and is uniform over the device. This effect causes shifts in the threshold voltages of MOS

transistors and can also decrease the carrier mobility in channels resulting in increased propagation

delay times. In bipolar devices, current gain and junction leakage currents are adversely affected.

The extent of total dose damage depends not only on the total absorbed dose but also on the dose

rate and annealing characteristic of the device.

In contrast to the total dose effect, the single event upset is a localized effect which occurs

when a single heavy ion or proton of high energy causes logic upset in semiconductor devices containing memory cells. This type of error is called a "soft error" as it causes no permanent damage

and the device can be reprogrammed for correct functioning. However, single heavy ions can also

cause latch-up, or hard errors, in devices with technologies where four layer SCR action is possible. Once latch-up is initiated in a device, control and functionality are lost. Device destruction

may also result unless current is limited or power is turned off and on again.

The available radiation test data indicates that the radiation hardness of microcircuits can be

expected to vary not only with the device type and technology, but also with subtle process variations continually being made by the manufacturers, i.e., with different manufacturing lots. Also,

the radiation test results are strongly dependent upon the bias conditions and other details of

radiation testing, such as the dose rate and the nature of irradiating source. Furthermore, the same

device type can be hard with respect to single event upsets while being soft to total dose effects or

vice versa. All these factors make it very difficult to specify the hardness levels for a particular

part type and/or technology. However, in recent years a data base on the relative hardness of different technologies to total dose and single event upsets has emerged from the radiation tests performed by different experimenters. Table 1 gives a comparison of the susceptibilities of different

technologies to the two types of natural radiation effects discussed above.

D-1 PPL 17

September, 1984
Table 1. Comparison of Radiation Susceptibility for

Microcircuits of Different Technologies. 1

Technology

Total Dose2

Hardness Level

Rads (Si) Soft Error

Relative Susceptibility3 To:

Latch-Up

DIGITAL

NMOS

CMOS/Bulk (unhardened)

CMOS/Bulk (hardened)

CMOS/SOS

TTL, Low Power TTL

Schottky TTL, Low Power

Schottky TTL

Advanced Low Power

Schottky TTL

5x102 - 104 High Immune

103 - 105 Moderate to high Moderate

2x103 _ 1Q6 Low Low

103 - 105 Very low Immune

105 - 107 Low to High Low

105 - 107 Low to High None to Low

2x104 - 106 — No Data Available —

I2L

ECL

LINEAR

CMOS

Bipolar, BI-FeT

2x104 _ 106

£5x106

103 _ 2x107

6x103'- 107

Moderate None too Low

Low None to Low

— No Data Available —

— No Data Available —

NOTES:

1. Refer to pages 10-1 and 10-2 for the technologies of different microcircuits listed in this PPL.

2. These figures define process averages. However, some devices may not meet these levels while

others may exceed them, e.g. some Schottky TTL RAM's fail much below the lower limit

listed in the Table while most other devices with this technology fall within the range shown.

3. The single event susceptibility "ratings" listed here are relative to each other. However, a

"moderate" error rate in a specific application may be unacceptably high if the application is

critical.

D-2 PPL 17

September, 1984
Table 1 provides only a qualitative guideline of radiation sensitivity of microcircuits and is

derived from published radiation test data.'.

 2 This often may not be sufficient as the rapid

changes which have been occuring in microcircuit technology have been accompanied by changes

in the radiation hardness of the parts. In general, lot sample testing may be necessary to determine

the hardness levels of a procured lot of devices prior to their usage in a particular application.

However, it may be noted that a number of vendors are making efforts to qualify their parts to

four standard radiation levels: namely 2.5 K, 10 K, 100 K and 1 M rads. The parts qualified to

these levels are identified in MIL-specifications by the symbols, M, D, R and H respectively, inserted in place of the slash mark in part markings. For more information and guidelines, consult

the radiation effects specialists listed in this PPL.

BIBLIOGRAPHY

1. "Microcircuit Radiation Data Bank", NTIS, Access # N83-27903.

2. Proceedings of IEEE Annual Conference on Nuclear and Space Radiation Effects, from 1977

through 1983, published in the December issue of IEEE Transaction on Nuclear Science, vol.

24 through Vol. 30.

D-3 PPL 17

September, 1984
APPENDIX E

SCREENING VERIFICATION

All JANTXV semiconductors purchased to the requirements of MIL-S-19500 shall be

subjected to the following 100% screening verification tests before use as Grade 2 parts. This

requirement shall not apply to JANS semiconductors. These tests may be used in lieu of the

JANTXV rescreening requirements specified in MIL-STD-975. Screening verification shall also

be performed on nonstandard JANTX and JANTXV parts.

1. External Visual

2. PIND

3. Fine Leak

4. Gross Leak

5. Initial Electrical

6. Power Burn-In or

Burn-In per slash sheet

7. Post Burn-In Electrical

8. Delta Calculation

9. PDA

MIL-S-19500

Requirement Paragraph

4.6.4.2

MIL-STD-750

Test Method

2071

2052 (Condition A or B)

1071 Test Condition G, H

1071 Test Condition, A, C, E, F

as specified (25 °C only)

1039 (Transistors)

1038 (Diodes)

as specified (25 °C only)

as specified

4.6.1

E-1 PPL 17

September, 1984