I ISTIR 88-3866

Center for Electronics and

Electrical Engineering

Technical

Progress

Bulletin

Covering Center Programs,

Vpril 1 to June 1988,

vith 1988 CEEE Events Calendar 88-2

)ctober 1 988

.S. Department of Commerce

ational Institute of Standards and Technology

ational Engineering Laboratory

aithersburg, Maryland 20899 Stimulating America s Progress 1913-1988

BCE
INTRODUCTION TO OCTOBER 1988 ISSUE OF THE CEEE TECHNICAL PROGRESS BULLETIN

This is the twenty- third issue of a quarterly publication providing information o the technical work of the National Institute of Standards and Technology (formerly tb

National Bureau of Standards) Center for Electronics and Electrical Engineering. Thi

issue of the CEEE Technical Progress Bulletin covers the second quarter of calenda

year 1988.

I Organization of Bulletin: This issue contains abstracts for all Center papei

released for publication by NIST in the quarter and citations and abstracts for Cente

papers published in the quarter. Entries are arranged by technical topic z identified in the table of contents and alphabetically by first author under eac subheading within each topic. Unpublished papers appear under the subheadir

"Released for Publication". Papers published in the quarter appear under tl

subheading "Recently Published" . Following each abstract is the name and telephor

number of the individual to contact for more information on the topic (usually tt first author). This issue also includes a calendar of Center conferences ai

workshops planned for calendar year 1988 and a list of sponsors of the work.

Center for Electronics and Electrical Engineering: Center programs provide nation,

reference standards, measurement methods, supporting theory and data, and traceabi.

ity to national standards.

The metrological products of these programs aid economic growth by promoting equiiand efficiency in the marketplace, by removing metrological barriers to improve

productivity and innovation, by increasing U. S. competitiveness in internation.

markets through facilitation of compliance with international agreements, and 1i providing technical bases for the development of voluntary standards for domestic ai

international trade. These metrological products also aid in the development

rational regulatory policy and promote efficient functioning of technical programs \'L the Government

The work of the Center is divided into two major programs: the Semiconductor Tec

nology Program, carried out by the Semiconductor Electronics Division in Gaither

burg, MD, and the Signals and Systems Metrology Program, carried out by the Electr

systems Division in Gaithersburg and the Electromagnetic Fields and Electromagnet

Technology Divisions in Boulder, CO. Key contacts in the Center are given on t

back cover; readers are encouraged to contact any of these individuals for furth

information. To request a subscription or for more information on the Bulleti

write to CEEE Technical Progress Bulletin, National Institute of Standards a Technology, Metrology Building, Room B-358, Gaithersburg, MD 20899 or call (30

975-2220. iJ

Center sponsors: The Center Programs are sponsored by the National Institute of Sta-C

dards and Technology and a number of other organizations, in both the Federal ai

private sectors; these are identified on page 24. P

; 1

: P01 Note on Publication Lists: Guides to earlier as well as recent work are the public

tion lists covering the work of each division. These lists are revised and rei.sst'rf

on an approximately annual basis and are available from the originating division.

current set is identified in the Additional Information section, page 22.
IEEE Technical Progress Bulletin - October 1988 Page 1

TABLE OF CONTENTS

NTRODUCTION inside front cover

! EMI CONDUCTOR TECHNOLOGY PROGRAM 2

Silicon Materials 2

Analysis Techniques 2

Dimensional Metrology 3

Photodetectors .... 3

Power Devices 4

Device Physics and Modeling 4

Insulators and Interfaces 5

AST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 6

Waveform Metrology 6

Cryoelectronic Metrology 6

Antenna Metrology 7

Noise Metrology 8

Microwave and Millimeter-Wave Metrology 8

Optical Fiber Metrology 8

Electro-Optic Metrology 9

Complex Testing 11

Other Fast Signal Topics 11

LECTRICAL SYSTEMS 11

Power Systems Metrology 11

Superconductors 13

Magnetic Materials & Measurements 16

Other Electrical Systems Topics 17

LECTROMAGNETIC INTERFERENCE 17

Radiated Electromagnetic Interference 17

Conducted Electromagnetic Interference 21

DDITIONAL INFORMATION 22

ECENTLY ISSUED STANDARD REFERENCE MATERIALS 22

988 CEEE CALENDAR 23

PONSOR LIST 24

EY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 2 CEEE Technical Progress Bulletin - October 19{

SEMICONDUCTOR TECHNOLOGY

Silicon Materials

Released for Publication

Roitman, P. , and Davis, G.E., Selected

Area Channeling Pattern and Defect Etch

Study of Silicon Implanted with Oxygen,

to be published in the Proceedings of

the Materials Analysis Society, Milwaukee, Wisconsin, August 8-12, 1988.

Silicon films on buried oxide layers

formed by oxygen implantation have been

studied using selected area channeling

patterns and chemical etching. Neither

technique provides the detailed

information on defect morphology

available from cross-sectional TEM, but

both techniques appear capable of

providing useful information on defect

densities. Sample preparation is

certainly easier for both than for TEM,

and the channeling pattern approach is

nondestructive. There is some promise

that they can be extended in the case of

lower defect densities, although it is

not clear how far. The analysis of the

channeling pattern data and the

correlation of that analysis with film

quality needs to be more firmly

established.

[Contact: Peter Roitman, (301) 975-

2077]

Analysis Techniques

Released for Publication

Baghdadi, A., Bullis, W.M.

Croarkin,

M.C., Yue-zhen, L. , Scace, R.I.,

Series, R.W.

Stallhofer, P. , and

Watanabe , M. , Interlaboratory Determination of the Calibration Factor for

the Measurement of the Interstitial

Oxygen Content of Silicon by Infrared

Absorption.

We report a world-wide interlaboratory

experiment to determine the calibration

factor used to calculate the interstitial oxygen content of silicon from

room- temperature infrared absorption

measurements . We conducted a roun

robin for both the infrared and th

absolute measurements on the same o equivalent specimens. The conversio

coefficient for computing the oxyge

content of silicon in parts per millio

atomic (ppma) from a room- temperatur

measurement of the absorption coeffi

cient at 1107 cm'^ was determined to b

6.28 ± 0.18 ppma/cm”l.

[Contact: Aslan Baghdadi, (301) 975

2062]

Gladden, W.K.Baghdadi, A., Slaughter

S., and Duncan, W. , Semiconductc

Measurement Technology: Automat!

Determination of the Interstitis

Oxygen Content of Silicon Wafer

Polished on Both Sides, to be publishe

as NIST Special Publication 400-81.

This Special Publication contains

FORTRAN and a PASCAL computer progrf,

which implement an ASTM test method fc

the automatic determination of tl

interstitial oxygen content of silicoi

The programs are to be used as illustrfi

tive examples by programmers wishing 1? implement the ASTM algorithm on the:!

computers. The publication all

includes sample data that can be used i test the computer programs. The samp!

data are included in two forms: :jr print, and on an MS-DOS floppy disk.

[Contact: Aslan Baghdadi, (301) 97!

2062]

|| Roitman, P. , and Davis, G.E., Select!

Area Channeling Pattern and Defect Eta

Study of Silicon Implanted with Oxyge:

to be published in the Proceedings |

the Materials Analysis Society, Milwa

kee, Wisconsin, August 8-12, 1988.

I Silicon films on buried oxide laye s formed by oxygen implantation have be i studied using selected area channeli \ patterns and chemical etching. Neith:

technique provides the detail 1 information on defect morpholof

available from cross-sectional TEM, b:

both techniques appear capable

providing useful information on defet

densities. Sample preparation
IEEE Technical Progress Bulletin - October 1988 Page 3

-lalvsts Techniques (cont'd.)

jrtainly easier for both than for TEM,

id the channeling pattern approach is

indestructive . There is some promise

lat they can be extended in the case of

>wer defect densities, although it is

it clear how far. The analysis of the

lanneling pattern data and the

irrelation of that analysis with film

lality needs to be more firmly

jtablished.

Contact: Peter Roitman, (301) 975-

>77]

.mensional Metrology

|

Released for Publication

ryssonen, D. , Narrow-Angle Laser

Scanning Microscope System for

-inewidth Measurements on Wafers, to be

published as NISTIR 88-3808.

le integrated-circuit industry in its

ish to finer and finer line geometries

•proaching submicrometer dimensions has

eated a need for ever more accurate

id precise feature-size measurements to

tablish tighter control of fabrication

ocesses. In conjunction with the NBS

miconductor Linewidth Metrology

ogram, a unique narrow- angle laser

asurement system was developed. This

port describes the theory, optical

sign, and operation of this system and

eludes computer software useful for

aracterizing the pertinent optical

rameters and images for patterned thin

yers . For thick layers, the physics

more complex, and only elements of

e theory are included here. For more

tail, the reader is referred to

veral related reports listed in the

ferences

ontact: Robert D. Larrabee, (301)

5-2398]

Recently Published

stek, M.T.

Keery, W.J., and Larrabee,

. D. , The Relationship Between Acelerating Voltage and Electron

etection Modes to Linewidth Measurement in an SEM, Journal of Scanning

Microscopy, Vol. 10, pp. 10-18 (1988).

The basic premise underlying the use of

the scanning electron microscope (SEM)

for linewidth metrology in semiconductor

research and production applications is

that the video image acquired, displayed, analyzed, and ultimately

measured accurately reflects the

structure of interest. However, it has

been clearly demonstrated that image

distortions can be caused by the

detected secondary electrons not

originating at the point of impact of

the primary electron beam and by the

type and location of the secondary

electron detector. These effects and

their contributions to the actual image

or linewidth measurement have not been

fully evaluated. Effects due to

uncertainties in the actual location of

electron origination do not affect pitch

(line center- to-center or similar-edgelocation-to-similar-edge- location

spacing) measurements as long as the

lines have the same edge geometries and

similar profiles of their images in the

SEM. However, in linewidth measurement

applications, the effects of edge

location uncertainty are additive and

thus give twice the edge detection error

to the measured width. The basic intent

of this work is to demonstrate the

magnitude of the errors introduced by

beam/specimen interactions and the mode

of signal detection at a variety of

beam acceleration voltages and to

discuss their relationship to precise

and accurate metrology.

[Contact: Michael T. Postek, (301) 975-

2299]

Photodetectors

Released for Publication

Geist, J., Blocked Impurity Band and

Superlattice Detectors: Prospects for

Radiometry, to be published in the

Proceedings of New Developments and

Applications in Optical Radiometry,

NPL, Teddington, United Kingdom, April

12-13, 1988.
Page 4

Photodetectors (cont'd.)

CEEE Technical Progress Bulletin - October 19 i

Blocked Impurity Band (BIB) detectors

and photomultipliers, which have been

described by Petroff and Stapelbroek,

may be suitable for use as high-accuracy

standards for low background optical

radiation measurements extending from

the near ultraviolet to beyond 25 /im in

the infrared. The current status of

their development from the point of view

of standards applications is reviewed.

Superlattice technology offers new

materials properties, new degrees of

freedom, and new possibilities for

optical radiation detectors displaying a

large range of tailorability and

tunability. GaAs/AlGaAs superlattices

are used to illustrate new properties,

HgTe/CdTe superlattices are used to

illustrate new degrees of freedom, and

GaAs-doping superlattices are used to

illustrate tailorability and tunability.

[Contact: Jon Geist, (301) 975-2066]

Power Devices

Released for Publication

Hefner, A.R. , Analytical Modeling of

Device-Circuit Interactions for the

Power Insulated Gate Bipolar Transistor

(IGBT) , to be published in the Conference Record of the IEEE Industry

Applications Society Annual Meeting,

Pittsburgh, Pennsylvania, October 2-7,

1988.

The device-circuit interactions of the

power Insulated Gate Bipolar Transistor

(IGBT) for a series resistor- inductor

load, both snubbered and unsnubbered,

are simulated. An analytical model for

the transient operation of the IGBT,

previously developed, is used in

conjunction with the load circuit state

equations for simulations. The

simulated results are compared with

experimental results for all conditions.

Devices with a variety of base lifetimes

are studied.

For the fastest devices studied (base

volta i a larg c the

and

be switch

(e.g., 80 \

lifetime = 0.3 /us) , the volta

overshoot of the series resisto

induction load circuit approaches t>

device voltage rating (500 V) for lol

inductances greater than 1 /iH. F:

slower devices, though,

overshoot is much less,

inductance can therefore

without a snubber circuit

for a 7-/is device). In this study, tj

simulations are used to determine ti

conditions for which the differet

devices can be switched safely without!

snubber protection circuit. Simulatios

are also used to determine the requiri

values and ratings for protectin

circuit components when protectin

circuits are necessary.

[Contact: Allen R. Hefner, (301) 97-

2071]

Recently Published

Hefner, A.R. , Blackburn, D.L. , a'd Galloway, K.F., A Steady-State Mocl

for the Insulated Gate Bipol'r

Transistor, Physics of Semiconduct r Devices (Proceedings of the Fourh

International Workshop, Madras, Indi , December 10-15, 1987), S.C. Jain and . Radhakrishna, Eds. (World Scientifj

Singapore, 1988), pp. 22-38.

The power Insulated Gate BipoJr

Transistor (IGBT) is a switching devie

designed to overcome the high on-st£e

loss of the power MOSFET. The ICT

behaves as a bipolar transistor which s supplied base current by a MOSFET. le

bipolar transistor of the IGBT has a wide base with the base contact at 1 e collector edge of the base and s : operated with its base in high-levl

injection. The usual bipolar transisir

models are not adequate for the IG] . This paper describes a model for i e IGBT developed using ambipolar trai - port.

[Contact:

2071]

Allen R. Hefner, (301) 9‘ 4

Device Physics and Modeling

Released for Publication
CEEE Technical Progress Bulletin - October 1988 Page 5

Device Physics and Modeling (cont'd.)

Lowney, J.R., Application of Multiscattering Theory to Impurity Bands in

Si:As.

Impurity bands in arsenic-doped silicon

have been calculated for doping

densities of 3.3 x 10^, 1.2 x 10^®, and

8.0 x 10^® cm~3. A multi-scattering

approach is used with a model potential

which provides both electronic screening

and the proper bound- state energy for

the isolated center. The results are in

good agreement with previous calculations based on electron hopping among

hydrogenic centers . An advantage of the

multi-scattering approach is that it

treats the conduction-band states as

well, and shows the loss of these states

to the formation of the impurity band.

Calculations are also performed for the

states associated with the binding of an

extra electron to un- ionized arsenic

centers, the so-called D" band. The

overall results are in good agreement

with the observed Mott transition in

Si : As

[Contact: Jeremiah R. Lowney, (301)

975-2048]

Lowney, J.R., The Effect of High

Injection on the Density of States of

Silicon, to be published in the

Proceedings of the IEEE Bipolar

Circuits and Technology Meeting,

Minneapolis, Minnesota, September 12-

13, 1988.

The density of states of the conduction

and valence bands of silicon has been

calculated at 300 K for the case of an

electron-hole plasma which occurs at

high injection levels in bipolar

devices

[Contact: Jeremiah R. Lowney, (301)

975-2048]

Mayo, S., and Lowney, J.R., Lattice

Relaxation in Silicon Doped with 4dand 5d-Transition Metals.

Photoionization cross-section spectra

from deep centers in silicon doped with

technologically important 4d- and 5dtransition elements were analyzed by the

Ridley and Amato lattice coupling model

to determine threshold energy and

lattice relaxation parameters corresponding to optically induced

transitions involving either band. The

average optic phonon energy is 50 meV.

Electron transitions to the conduction

band from the silver, platinum, and gold

acceptor centers have, respectively,

threshold energies (in meV) E-^q = 550,

226, and 570. For silver and gold, the

Huang-Rhys parameter S could not be

determined because of a mixture of both

allowed and forbidden transitions; for

platinum, S = 0.3. Hole transitions

from the valence band to the same

centers are, respectively, E^q = 580,

905, 590, and S = 1.3, 0.5, 0.8. Hole

transitions from the valence band to the

donor centers of these elements are,

respectively, E-p 0 = 340, 320, 335, and S = 1.2, 1.4, 0.4. E-p 0 and S values are

uncertain to within ±5 meV and ±0.05,

respectively. Electron transition data

from the donor centers of these elements

to the conduction band are not available

or insufficient to allow analysis of the

threshold region.

[Contact: Santos Mayo, (301) 975-

2045]

Insulators and Interfaces

Recently Published

Carver, G.P., Kopanski , J.J., Novotny,

D.B. , and Forman, R.A.

Specific

Contact Resistivity of Metal-Semiconductor Contacts -- A New, Accurate

Method Linked to Spreading Resistance,

IEEE Transactions on Electron Devices,

Vol. 35, No. 4, pp. 489-497 (April

1988)

A new method to deduce the specific

contact resistivity of metal-semiconductor contacts has been developed that

allows separation of the components

contributing to the total series

resistance between two contacts. The

principle of the method is the subtraction of the semiconductor spreading
Page 6 CEEE Technical Progress Bulletin - October 198?

Insulators and Interfaces (cont'd.)

resistance, deduced from a four-contact

resistivity measurement, from the total

two-contact resistance. This procedure

requires geometrically well-defined

small contacts that are accurately

fabricated by lithographic methods.

Using the method, accurate values were

obtained for the specific contact

resistivity of an aluminum- 1 . 5% silicon

alloy to p-type silicon wafers having

dopant densities from 5 x 10^ to 2 x

1020 cm‘^. The specific contact

resistivity values are lower than

previously published values obtained

using earlier methods In which parasitic

and nonideal effects could not be

quantified or eliminated. The lower

values indicate that contact resistance

has a less limiting effect on the

performance of integrated circuits than

presently believed.

[Contact: Joseph J. Kopanski, (301)

975-2089]

FAST SIGNAL ACQUISITION, PROCESSING, AND

TRANSMISSION

Waveform Metrology

Released for Publication

Oldham, N.M.Hetrick, P.S., and

Xiangren, Z. , A Calculable, Transportable Audio -Frequency ac Frequency

Standard, to be published in the

Conference Digest of CPEM-88 , Tsukuba

Science City, Japan, June 7-10, 1988.

A transportable ac voltage source is

described, in which sinusoidal signals

are digitally synthesized in the audiofrequency range . The rms value of the

output waveform may be calculated by

measuring the dc level of the individual

steps used to generate the waveform.

The uncertainty of this calculation at

the 7-V level is typically less than ±5

ppm from 60 Hz to 2 kHz and less than

±10 ppm from 30 Hz to 15 kHz.

[Contact: Nile M. Oldham, (301) 975-

2408]

Recently Published

Lawton, R.A.

and Anderson, W.T., TwoLayer Dielectric Microstrip Line

Structure: Si02 on Si and GaAs on Si:

Modeling and Measurement, IEEE Transac

tions on Microwave Theory and Tech

niques, Vol. 36, No. 4, pp. 785-78 ( (April 1988).

Further development of the modeling o: the two- layer dielectric striplim

structure is reported by computing th<

scattering parameter S 21 derived froi

the model and comparing the compute

value with the measured value over th

frequency range from 45 MHz to 25 GHz

The sensitivity of S 21 to variou

parameters of the structure is als

discussed. Examples of measurement an

modeling of the silicon dioxide o silicon system and modeling of th:

gallium arsenide on silicon system ar: given.

[Contact: William L. Gans , (303) 497

3538]

Crvoelectronic Metrology

Released for Publication

Sauvageau, J.E., and McDonald, D.G.

Progress on a Superconducting Indue

tance Bolometer with Potential Photor

Counting Sensitivity. I

Progress towards the development of ! bolometer based on the temperatui

dependence of the inductance of

superconducting microstrip line j presented. Since the device i Hi superconducting, it has no Johns< ii noise; it can be impedance matched to <|»t optimized SQUID preamplifier, tlja

quietest of all amplifiers; and its bi. it current is relatively unrestricted 1 j self -heating. Thus, it is a bolometer

theoretically limited only by phonnit

noise. If the phonon noise can be madioi

negligible, then analysis suggests th e; a bolometer with an electrical no i

equivalent power of about 7 x 10” ; W/(Hz )^/2 may be feasible. Since o‘!t optical photon per second is about 7 4
CEEE Technical Progress Bulletin - October 1988 Page 7

Jrvoelectronic Metrology (cont'd.)

L0“^ W, the device has the potential

for counting photons

[Contact: Donald G. McDonald, (303)

*97-5113]

Recently Published

Jo, D. , Hamilton, D., Lloyd, F.L.

Dilorio, M.S., and Withers, R.S., A

Superconducting Analog Track- and-Hold

Circuit, IEEE Transactions on Electron

Devices, Vol. 35, No. 4, pp. 498-501

(April 1988).

* superconducting analog track-and-hold

tircuit has been designed, fabricated,

md tested. Experimental results

lemonstrate a 1.2-GHz bandwidth and a

!5-dB dynamic range. Model calculations

.ndicate that an optimized circuit with

i critical current density of 10,000

,/cm^ can achieve a 4 -GHz bandwidth and

i 35 -dB dynamic range.

Contact: Diane Go, (303) 497-3770]

ntenna Metrology

Released for Publication

rancis, M.H.

Repjar, A.G., and Kremer,

D.P., Antenna Measurements for Millimeter Waves at the National Bureau of

Standards, to be published in the

Proceedings of the Antenna Measurement

Techniques Association Meeting,

Atlanta, Georgia, September 12-16,

1988.

or the past two years, the National

ureau of Standards (NBS) has been

eveloping the capability to perform onxis gain and polarization measurements

t mil lime ter -wave frequencies from 33

o 65 GHz. This paper discusses the

rror analysis of antenna measurements

t these frequencies. The largest

ource of error is insertion loss

easurements . In order to make accurate

risertion loss measurements, flanges on

ntennas need to be flat and perpenicular to the waveguide axis to within

pproximately 0.001 cm (0.0005 in.). In

addition, waveguide screws need to be

tightened with a device that supplies

constant torque. For antennas with

gains less than about 25 to 30 dB

(probes)

NBS can measure on-axis gains

to within an uncertainty of 0.14 dB in

the 33- to 50-GHz frequency band and

within 0.16 dB in the 55- to 65 -GHz

frequency band using the three -antenna

technique on the extrapolation range.

For antennas with larger gains , NBS can

measure on- axis gains to within an

uncertainty of 0.21 dB in the 33- to 50-

GHz frequency band and within 0.24 dB in

the 55- to 65 -GHz band using the planar

near-field technique. NBS is continuing

development of its measurement capabilities, including measuring probe

correction coefficients required in

planar near-field processing, in order

to provide accurate pattern measurements

at these frequencies.

[Contact: Michael H. Francis, (303)

497-5873]

Recently Published

Muth, L.A.

Displacement Errors in

Antenna Near-Fie Id Measurements and

Their Effect on the Far Field, IEEE

Transactions on Antennas and Propagation, Vol. 36, No. 5, pp. 581-591 (May

1988)

The effects of probe displacement errors

in the near- field measurement procedure

on the far-field spectrum are studied.

Expressions are derived for the

displacement error functions that

maximize the fractional error in the

spectrum both for the on-axis and offaxis directions. The x-y and z- displacement errors in planar scanning

are studied first, and the results are

then generalized to errors in spherical

scanning. Some simple near-field models

are used to obtain order-of-magnitude

estimates for the fractional error as a function of relevant scale lengths of

the near field, defined as the lengths

over which significant variations occur.

[Contact: Lorant A. Muth, (303) 497-

3603]
Page.8 CEEE Technical Progress Bulletin - October 1981

Noise Metrology

Recently Published

Wait, D.F., Daywitt, W.C., and Counas

G. , Intercomparison of NBS Noise

Calibration Services, Digest of the

1988 Conference on Precision Electromagnetic Measurements, Tsukuba, Japan,

June 7-10, 1988, p. 209.

New, less restrictive thermal noise

calibration services recently established in the frequency range of 2

to 12.4 GHz overlap prior NBS services

and provide an opportunity for intercomparison. The agreement between old and

new calibration systems is better than

0.4 percent.

[Contact: David F. Wait, (303) 497-

3610]

Microwave & Millimeter-Wave Metrology

Released for Publication

Counas, G.J., and Yates, B.C., Measurement of Adapter Loss, Mismatch, and

Efficiency Using the Dual Six-Port to

be published as NISTXR 88-3096.

A noise measurement system is being

developed for the Air Force which uses

coaxial cryogenic and ambient noise

temperature standards to determine the

noise temperature of the device under

test. When the device under test has a

different connector than those on the

noise standards, an adapter has to be

used. Adapter loss and complex

reflection coefficient must be compensated for, or noise measurement accuracy

is affected. A technique has been

developed which uses a dual six-port

measurement system to determine the

mismatch, loss, and ultimately the

efficiency of the adapter used. This

enables correction of measurement

results and allows measurements to be

made with an adapter with no degradation

of accuracy. The method of evaluating

adapters is described, and instructions

for its use are provided.

[Contact: George J. Counas, (303)

4973664]

Recently Published

Hoer, C.A., An Equivalent Circuit for

Imperfect Transmission Line Connectors,

Digest of the 1988 Conference on

Precision Electromagnetic Measurements,

Tsukuba, Japan, June 7-10, 1988, pp

264-265.

An exact equivalent circuit for a pair

of transmission line connectors is

developed. New reference planes are

chosen in such a way that all imperfections in the connector pair can be

lumped into one connector or the other.

This makes it possible to compensate for

imperfections in test port connectors

when calibrating network analyzers.

[Contact: Cletus A. Hoer, (303) 497-

3705]

Holt, D.R. , Determination of Scattering

Parameters from Precision Coaxial AirLine Standards, Digest of the 1988

Conference on Precision Electromagnetic

Measurements, Tsukuba, Japan, June 7-

10, 1988, p. 263.

Scattering parameter expressions are

developed for the principal mode of a coaxial air line. Dimensional variations in the inner and outer conductors

and skin effect are included in the

model. An error analysis reveals that

accuracy of the scattering parameters is

primarily dependent on the precision of

the measurements of conductor radii.

[Contact: Donald R. Holt, (303) 497-

3574] I

Optical Fiber Metrology

Released for Publication

Drapela, T.J., Interlaboratory Comparison of Far-Field Methods foil

Determining Mode Field Diameter Usinf

Both Gaussian and Petermann Definitions, to be published as an NIST

Special Publication.
CEEE Technical Progress Bulletin - October 1988 Page 9

ptical Fiber Metrology (cont'd.)

n interlaboratory comparison of

easurement methods for mode field

iameter (MFD) was conducted, using both

he Gaussian and Petermann definitions

f MFD. Both dispersion-shifted and

nshifted single-mode optical fibers

ere measured at wavelengths of 1300 run nd 1550 run. Petermann results gave

ignificantly better agreement between

easurement methods than Gaussian,

ithout exception.

Contact: Timothy J. Drapela, (303)

97-5858]

ranzen, D.L. , Young, M. , Cher in, A. , Head, E. , Hackert, M. , Raine , K. , and

Baines , J . , Numerical Aperture of

Multimode Fibers by Several Methods:

Resolving Differences

in industry-wide study among members of

he Electronic Industries Association

as conducted to document differences

etween three numerical aperture

easurement methods. Results on twelve

ultimode graded index fibers indicate

hat systematic differences exist among

ommonly used far -fie Id and index

rofile techniques. Differences can be

xplained by a wave length -dependent

actor and choice of definitions,

onversion factors may be used to relate

he various methods.

Contact: Douglas L. Franzen, (303)

97-3346/-5342]

ose, A.H. , Day, G.W. , Lee, K.S., Tang,

D. , Vesser, L.R.

Paptheofanis , B.J.,

and Whitesel, H.K.

Optical Fiber

Sensors for the Measurement of Electromagnetic Quantities, to be published in

the Sensors, The Journal of Machine

Perception (Proceedings of the Sensors

Expo 1988), Chicago, Illinois,

September 12-16, 1988.

ensors used for the measurement of both

ulsed and ac current, voltage, and

agnetic field are described. Design

onsiderations , including the choice of

omponents and configurations, and

erformance achievements are discussed.

In this paper, several sensor configurations are described which are presently

being used to measure current, voltage,

and magnetic fields in environments

where electromagnetic interference is a

problem. The current and magnetic-field

sensors are based on the Faraday effect

either in single-mode optical fiber or

in bulk glass or polycrystalline

materials. The voltage sensors are

based on the linear electro-optic

(Pockels) effect in cubic crystalline

materials

[Contact: Allen H. Rose, (303) 497-

5599]

Tang, D. , and Day, G.W., Progress in the

Development of Miniature Optical Fiber

Current Sensors, to be published in the

Proceedings of the IEEE Lasers and

Electro-Optic Society Annual Meeting,

Santa Clara, California, November 2-4,

1988.

Recent improvements in fiber annealing

technology has allowed the substantial

reduction of size and increase in the

number of turns of fiber current- sensing

coils. Coils as small as 7-mm diameter

have been successfully annealed. Coils

with more than 100 turns and diameters

of 1 or 3 cm are routinely produced.

The linear birefringence of such coils

is small enough that Faraday rotation is

not measurably diminished. Increased

loss as a result of annealing is

minimal

[Contact: Gordon W. Day, (303) 497-

5204]

Electro-Optic Metrology

Released for Publication

Gallawa, R.L. , and Tu, Y. , Analysis of

Circular Bends in Planar Optical

Waveguides

Waveguides with circular bends are

analyzed using a conformal transformation in conjunction with the WKB method

of dealing with the nonuniform refractive index that results from the

transformation. The result is a
Page 10 CEEE Technical Progress Bulletin - October 1981

Electro-Optic Metrology (cont'd.)

prediction of the operational parameters

of the bent guide, including the loss.

The transformation allows an intuitive

understanding of the cause of the loss.

[Contact: Robert L. Gallawa, (303) 497-

3761]

Hale, P.D. , and Day, G.W., Stability of

Birefringent Linear Retarders (Waveplates)

The effects of changes in temperature,

wavelength, and direction of propagation

(angle of incidence) on the retardance

of zero-order, multiple-order, compound

"zero-order", and temperature-compensated waveplates are described in

detail. A disagreement in the literature regarding the properties of a

compound "zero-order" waveplate is

resolved by showing that with respect to

temperature and wavelength, it behaves

like a true zero-order waveplate, but

with respect to angle of incidence, it

behaves like a multi-order waveplate. A

previously proposed temperaturecompensated design is shown to suffer

from the same directional limitations.

A new design for a retarder consisting

of one element of a positive uniaxial

crystal and one element of a negative

uniaxial crystal is proposed. The

retardance of such a waveplate would be

much less sensitive to the direction of

propagation, but somewhat more sensitive

to temperature, than a typical compound

zero-order waveplate.

[Contact: Gordon W. Day, (303) 497-

5204]

Hickernell, R.K.

Larson, D.R.

and

Phelan, R.J., Electrically Calibrated

Photothermal Deflection Measurement for

Separating Channel Waveguide Loss

Mechanisms, to be published as an NIST

Special Publication.

Electrical calibration of the photothermal deflection effect permits us to

distinguish absorption from scattering

contributions to total propagation loss

in channel waveguides. In the calibration technique, the resistive heating of

a thin-film metal strip deposited on the

substrate mimics the absorption of

guided light. The technique is

illustrated by experimental results from

ion-exchanged glass waveguides.

[Contact: Robert K. Hickernell, (303)

497-3455]

Larson, L.E., Larson, D.R.

and Phelan,

R . J . , System for Measuring Optical

Waveguide Intensity Profiles, to be

published as NISTIR 88-3092.

A computer-controlled system to measure

the intensity profile of optical

waveguides has been developed.

Knowledge of the intensity profile

provides an indication of the shape of

the waveguide and, therefore, the degree

to which light can be coupled to the

guide from an optical fiber. This

report describes the construction and

operation of this system.

[Contact: Donald R. Larson, (303) 497-

3440]

Lee, K.S., Electromagnetic Wave

Propagation Through Anisotropic Crystals

Possessing Multiple Birefringences, and

Compensation Techniques for Bulk-Type

Optical Sensors with Multiple Birefringences .

The expression for the dielectric tensor

of an anisotropic crystal with multiple

perturbation is derived. Starting from

Maxwell's equations and the expression

for the dielectric tensor, electromagnetic wave propagation through anisotropic crystals possessing multiple

birefringences is studied using both

normal-mode formalism and coupled-mode

theory. A 2 -by

transmission matrix

formalism is extended to anisotropic

crystals possessing multiple birefringences in order to find compensation

schemes for optical sensors employing

the crystal. It is shown that compensation techniques utilizing two analyzers

can eliminate the effects of both

unwanted linear birefringences and

unwanted circular birefringences on the

stability of the ac bulk- type optical
IEEE Technical Progress Bulletin - October 1988 Page 11

jllectro-Qptic Metrology (cont'd.)

sensor. The condition (here referred to

is the quenching condition) , under which

:he compensation methods become

Important, is derived for both the

voltage sensor and the current sensor.

Qso, from coupled-mode theory applied

:o wave propagation in anisotropic

:rystals possessing multiple birefringences, the complex coupling constants

ire obtained.

[Contact: Kyung S. Lee, (303) 497-5170]

Complex Testing

Released for Publication

Jtenbakken, G.N., and Starzyk, J.A.,

Diakoptic and Large Change Sensitivity

Analysis

This paper presents an approach for the

inalysis of large circuits based on the

ise of the large change sensitivity

cechnique applied to decomposed

networks . As a result of this approach,

i simple, compact notation for the

lolution vector is derived. The method

.s applicable to nonlinear analog

networks with hierarchical decomposition

iimulated by inserted ideal switches. A

simple illustrative example is given.

Contact: Gerard N. Stenbakken, (301)

75-2440]

ther Fast Signal Topics

Released for Publication

eyer, R.G. , Dielectric Mixing Rules for

Background Test Soils, to be published

as NISTIR 88-3095.

he bulk or effective dielectric

onstant of any background test medium

whether naturally occurring or

ynthetic) determines the electromagetic visibility of buried objects,

euristic mixing rules are considered

hat allow the prediction of complex

iiielectric behavior in linear, homogenei us , isotropic, and lossy multi-phase

boil mixtures. Measurement results in

bio-electromagnetic and microwave remote

sensing suggest a refractive mixing

model as that being most suited for dry

soils or soil-water mixtures.

[Contact: Richard G. Geyer, (303) 497-

5852]

Hill, D.A. , Near-Field Detection of

Buried Dielectric Objects.

The plane-wave, scattering-matrix method

is used to compute the response of a

detector to a buried dielectric

scatterer. Specific numerical results

are generated for a UHF dipole detector

swept over a buried dielectric cube.

The maximum response is obtained when

the detector is located at the air-earth

interface, and the response decays

rapidly with detector height. The sweep

curves are symmetrical in the horizontal

direction and have a null for the

detector directly over the object. An

experimental curve for a free -space

environment has the same qualitative

features

[Contact: David A. Hill, (303) 497-

3472]

Vanzura, E.J., Creating CSUBs Written in

FORTRAN That Run in BASIC, to be

published in the Proceedings of the

INTEREX Technical Computer Users

Conference, Orlando, Florida, August 7-

12, 1988.

CSUBs are compiled subprograms created

using the Pascal operating system which

run in the BASIC environment. A new

technique is described in which programs

written in FORTRAN can be turned into

CSUBs. Thus, powerful, well -documented

FORTRAN routines become accessible to

the BASIC- language programmer. I/O and

variable interfacing are discussed, and

a comprehensive example is provided.

[Contact: Eric J. Vanzura, (303) 497-

5752]

ELECTRICAL SYSTEMS

Power Systems Metrology

Released for Publication
Page 12 CEEE Technical Progress Bulletin - October 19*

Power Systems Metrology (cont'd.)

Misakian, M. , Characterizing Electrical

Parameters Near ac and dc Power Lines,

to be published in the Proceedings of

the U.S. -Japan Seminar on Electrical

Engineering (National Science Foundation) , Honolulu, Hawaii, August 1-4,

1988.

During the early 1970s, reports appeared

in the literature which raised questions

regarding possible biological effects

from exposure to power frequency lines

and in substations. In response to the

concerns generated by these reports,

numerous bioeffects studies were

initiated in the United States by

government and private agencies; the

studies continue to this day. In the

mid-1970s, there were no standards which

provided guidance for the measurement of

fields near power lines or for the

calibration of instrumentation used for

such measurements. Today, an ANSI/IEEE

standard exists for measurements of

electric and magnetic fields near ac

power lines, and an IEC standard exists

for measuring power frequency electric

fields. In addition, an IEEE standard

is currently being prepared for the

measurement of dc electric fields and

ion- related parameters near dc power

lines. This paper briefly surveys the

instrumentation currently in use for

characterizing fields near ac power

lines, and the electric field, ion

current density, and monopolar charge

density near dc power lines.

[Contact: Martin Misakian, (301) 975-

2416]

Olthoff, J.K., Van Brunt, R.J., Wang,

Y. , Champion, R.L.and Doverspike,

L.D. , Collisional Electron Detachment

Cross Sections for SFg, SF5, and F~ in

SFg: Implication for Interpretations

of Existing Ion Transport and Breakdown

Probability Data.

Collisional electron-detachment cross

sections for SFg , SF5 , and F" on SF5

target gas have been measured for

relative (center-of-mass) energies in

the range of 3 to 250 eV. Apparent

thresholds for direct detachment are

observed at 90 eV for SF5 and SF5 , anc

at 8 eV for F" . Cross sections for ionconversion processes that compete witl

detachment are reported and indicate the

necessity to re-examine ion-conversioi

rates determined in SFg from drift- tube

data. The measured cross sections are used in a theoretical model whict

invokes detachment from long-lived,

energetically unstable states ol

collisionally excited SFg to explain the

pressure dependence of previously

measured detachment coefficients and the

high detachment thresholds implied by

analysis of breakdown-probability date

for SFg. The model indicates that at

high pressure, measured detachment

coefficients appear to depend primarily

upon ion- conversion and direct detachment rates for processes involving F*

[Contact: James K. Olthoff, (301) 975-

2427]

Phelps, A.V.

and Van Brunt, R.J.

Electron Transport, Ionization

Attachment, and Dissociation Coeffi

cients in SFg and Its Mixtures.

An improved set of electron collisioi

cross sections is derived for SF5 am

used to calculate transport, ionization

attachment, and dissociation coeffi

cients for pure SFg and mixtures of SF( with N2 , O2 , and Ne

These SFg cross sections differ from th

previously published set primarily a very low and at high electron energies

At energies below 0.03 eV, the attach

ment cross section is adjusted to fi

recent electron swarm experiments

while the elastic momentum transfe

cross section is increased to th

theoretical limit. At high energies, a allowance is made for the excitation 0

highly excited levels as observed i

electron-beam experiments. The cross

section sets used for the admixed gase

have previously been published

Electron kinetic energy distribution

computed from numerical solutions of tl

electron- transport (Boltzmann) equatic
IF.EE Technical Progress Bulletin - October 1988 Page 13

Power Systems Metrology (cont'd.)

using the two -term, spherical harmonic

expansion approximation are used to

obtain electron transport and reaction

coefficients as functions of E/N and the

fractional concentration of SFg. Here E

is the electric field strength, and N is

the gas number density. Attachment rate

data for low concentrations of SFg in N2

are used to test the attachment cross

sections . Particular attention is given

to the calculation of transport and

reaction coefficients at the critical

E/N = (E/N) c at which the ionization and

attachment rates are equal.

[Contact: Richard J. Van Brunt, (301)

975-2425]

Zhang, Y. , McKnight, R.H.

and Hebner,

R.E.

Interactions Between Two Dividers

Used in Simultaneous Comparison

Measurements

A revised international standard for the

measurement of lightning and frontchopped lightning impulses is presently

under consideration. This standard

states that the accuracy of the

measuring systems used is to be

determined by comparison to reference

systems maintained by appropriate

national laboratories. Investigations

have been made of the interactions

.Detween two systems configured for

simultaneous measurements and of methods

for minimizing these interactions. Unit

step responses were measured for

different configurations, and a model

ieveloped to predict divider response,

simultaneous measurements were made of

full and chopped lightning impulses

ising different divider systems to

letermine the effects of divider

Interactions on measurements

Contact: Robert E. Hebner, (301) 975-

1403 ]

Recently Published

'an Brunt, R.J., and Kulkarni, S.V., New

Method for Measuring the Stochastic

Properties of Corona and Partial

Discharge Pulses, Conference Record of

the 1988 IEEE International Symposium

on Electrical Insulation, Boston, Massachusetts, June 7, 1988, pp . 233-237.

A new computer-based method for

measuring the statistical characteristics of corona or partial discharge

pulses is described. The method allows

direct measurement of a set of conditional probability distributions that

reveal correlations among successive

pulse amplitudes, pulse time intervals,

and between pulse amplitudes and time

intervals. Application of the method to

an investigation of ultraviolet

sustained negative corona (Trichel)

pulses in air has shown the existence of

strong correlations between pulse

amplitude and time interval as well as

between amplitudes of successive pulses.

The observed correlations appear to be

consistent with existing models for

Trichel pulse formation.

[Contact: Richard J. Van Brunt, (301)

975-2425]

Superconductors

Released for Publication

Bray, S.L., Goodrich, L.F., and Dube,

W.P., Battery Powered Current Supply

for Superconductor Measurements

In order to measure the critical current

of superconductors, a high output

current supply is required. In addition

to high current capability, the supply

should be designed to reduce ground loop

problems, respond linearly to an input

control signal, and minimize output

noise. A current supply having these

qualifications has been constructed and

tested. Although the supply was

originally designed for testing

conventional superconductors, it has

been successfully used in measurements

on the high-critical- temperature ceramic

superconductors as well. The supply can

produce 1000-A output current with a noise level of approximately 0.05 A

peak- to-peak. In addition to its normal

operation as a controllable dc current

source, two other specialized modes of
Page 14 CEEE Technical Progress Bulletin - October 198

Superconductors (cont'd.)

operation have been developed and

tested. In one mode, the supply is used

as a source of dc-biased ac currents for

testing the effect of dc -power- supply

ripple on critical-current measurements.

In the other mode, the supply is used in

conjunction with a larger and noisier

current source to form a hybrid supply.

In the hybrid system, the smaller supply

is used to increase the current output

while greatly reducing the noise output

of the larger supply. The specifics of

all designs, modes of operation, and

performance results are given.

[Contact: Loren F. Goodrich, (303) 497-

3143]

Ekin, J.W., Peterson, R.L., and Bray,

S.L., Effect of Small Coherence Length

on the Critical Current of High-Tc

Superconductors: Pinning, Weak Links,

Conduction Anisotropy, and Contact

Resistivities, to be published in the

Proceedings of the Materials Research

Society International Meeting on

Advanced Materials, Tokyo, Japan, 1989.

The coherence length £ of high-Tc superconductors is about an order of

magnitude smaller than for conventional

superconductors. This intrinsic

difference has profound consequences for

the transport properties of high-Tc superconductors. Because the pinning

effectiveness of defects of average size

<D> is greatest for <D>/£ = 1 and

decreases rapidly for <D>/£ < 1 , atomic

scale defects are ineffective as pinning

sites in conventional superconductors,

but play an important role in high-Tc superconductors. Unfortunately, the

small coherence length also makes atomic

scale defects effective tunneling

barriers in high-Tc superconductors.

Thus, from the practical standpoint of

producing high transport critical

current J c in high-Tc superconductors,

the conventional problem of pinning

force enhancement is replaced by weaklink minimization. The transport J c is

nearly independent of the angle between

the applied magnetic field and the

average transport current direction,

indicating highly convoluted percolation

paths in these materials. Conduction

anisotropy is a secondary factor, but

emerges as a prime determinant of

transport J c in the absence of weak link

effects. The effect of conduction

anisotropy on transport J c is described

in terms of a current- transfer model. A

method used to achieve contact resistivities in the 10"

^

o-cm^ range is

summarized.

[Contact: John W. Ekin, (303) 497-5448]

Goldfarb, R.B., Ried, D.L.

Kreilick,

T.S., and Gregory, E. , Magnetic

Evaluation of Cu-Mn Matrix Material for

Fine-Filament Nb-Ti Superconductors.

Copper -manganese alloys have been

proposed as matrix material for the

reduction of coupling losses in finefilament Nb-Ti superconductor wires.

Magnetization and susceptibility

measurements show that adverse magnetic

effects arising from the spin-glass

properties of this matrix are minimal

for concentrations of Mn up to at least

4 percent.

[Contact: Ronald B. Goldfarb, (303)

497-3650]

Katayama-Yoshida, H. , Hirooka, T.

Oyamada, A., Okabe, Y. , Takahashi, T.

Sasaki, T. , Ochiai, A., Suzuki, T.,

Mascarenhas, A.J., Pankove, J.I.,

Ciszek, T. , Deb, S.K., Goldfarb, R.B.,

and Li, Y. , Oxygen Isotope Effect in

the Superconducting Bi-Sr-Ca-Cu-0

System.

An oxygen isotope effect is observed in

mixed-phase Bi-Sr-Ca-Cu-0 superconductors when is substituted for ^0.

The isotope substitution is confirmed by

Raman scattering. The superconducting

transition temperature Tc , measured by

electrical resistivity and magnetic

susceptibility, is lowered by 0.34 i

0.03 K for the higher Tc (approximately

110-K) phase and by 0.33 ± 0.04 K for

the lower Tc (approximately 75 -K) phase.

The results suggest a measurable

contribution to the superconductivity
EEE Technical Progress Bulletin - October 1988 Page 15

perconductors (cont'd.)

om phonons in the two-dimensional Cu02

anes

ontact: Ronald B. Goldfarb, (303)

7-3650]

reland, J., Goodrich, L.F., Ekin,

.W. , Capobianco, T.E., and Clark,

.F., Break Junctions I, to be

blished as NISTIR 88-3090.

asurements of the tunneling current

ltage characteristics of break

notions in conventional superconducrs can be used to determine their

perconducting energy gap as a function

energy. These results agree with

se previously obtained using

aditional oxide tunneling barriers,

eak junctions in some exotic superconctors, on the other hand, have

omalous current-voltage characterises compared to BCS theory predicons . Energy gaps and the Josephson

feet measurement for the new high Tc terials YBaCuO (Tc = 93 K) and

SrCuO (Tc = 36 K) indicate that the

nples are inhomogeneous with varying

p functions depending on the location

the tunneling contact within the

sak junction fracture. Break junction

ta for these materials are within the

rong coupling limits of BCS theory,

intact: John Moreland, (303) 497-

U]

o, R. , Beall, J.A., Ekin, J.W.,

ilson, A.J., Kazmerski, L.L., Mason,

|LR. , Swartzland, A.B., and McConnell,

j.D. , Surface Analysis of Interfacial

roperties for Thin Film and Bulk

ia2Cu30y , to be published in the

roceedings of the Second Conference on

iperconductivity and Applications,

iffalo, New York, April 18-20, 1988.

£er electron spectroscopy (AES) has

1 ‘-n used to characterize the surface

l grain boundary chemistry of thin-

.m YBa2 Cu307 and the interface

ministry between In and Ag contacts to

ij.k YBa2 Cu307 before and after the

i indard post-deposition annealing.

Compositional variations at grain

boundaries as well as substrate effects

have been related to the observed

nonlinear tailing in the resistivity vs.

temperature curves. In addition, AES

analysis of the contact/YBa2 Cu30 y

interfacial chemistry is used to explain

the large variations in contact resistances observed for these technologically important materials

[Contact: Ronald H. Ono, (303) 497-

3762]

Peterson, R.L.

Bean Model Extended to

Magnetization Jumps.

The Bean model of magnetization in hard

superconductors is extended to include

the trains of magnetization jumps seen

at low temperature in moderate- to -high

magnetic fields. As in the original

Bean model, no particular mechanisms for

flux pinning or dynamics are invoked.

The model correctly accounts for the

general dependence of the size of the

magnetization jumps on sample size and

critical current density. The data

together with the model show that the

shielding fields are approximately equal

after each jump.

[Contact: Robert L. Peterson, (303)

497-3750/-3227

Recently Published

Ekin, J.W., Panson, A.J., and Blankenship, B.A. , Effect of Oxygen Annealing

on Low-Resistivity Contact for High-Tc Superconductors, Proceedings of the

Materials Research Society 1988 Spring

Meeting, Symposium K, Reno, Nevada,

April 5-8, 1988, Vol. 99, pp. 283-286.

A method for making low- resistivity

contacts to high-Tc superconductors has

been developed, consisting of depositing

noble metal contact pads (silver or

gold) on a clean superconductor surface

at low temperatures (<150°C) . After

annealing the silver contact pads in

oxygen at intermediate temperatures

(<500°C) for 1 h, contact resistivities

less than 2 x 10”® Q-cm^ at 76 K are

obtained, about six orders of magnitude
Page 16 CEEE Technical Progress Bulletin - October 198

Superconductors (cont'd.)

less than for indium- solder contacts.

Before annealing, the contact resistivities are still very low, in the 10"^

to 10“-* fl-cm^ range at 76 K, which

would be useful when contacts with low

fabrication temperatures are required.

The voltage -current characteristics of

the contacts are strongly nonlinear

after annealing, having a superconducting transition character. This is

ascribed to the critical current of the

superconducting material being exceeded

at the contact interface. External

connections to the contact pads have

been made using both solder and

thermosonic wire-bonding techniques.

[Contact: John W. Ekin, (303) 497-5448]

Goodrich, L.F., Development of Standards

for Superconductors, NBSIR 88-3088

(February 1988)

A cooperative program with the Department of Energy, the National Bureau of

Standards, other national laboratories,

and private industry is in progress to

develop standard measurement practices

for use in large-scale applications of

superconductivity. Research for the

period January 1986 through December

1987 is described. This report contains

the results of critical-current studies

on the effect of power supply current

ripple, measurements on single strands

extracted from cables, a round robin on

a large NbTi monolithic conductor, and

a Nb 3 Sn round robin. Several useful

current supply circuits have been

developed. The reduction coupling

losses in multifilamentary NbTi

conductors have been addressed by a

study of the magnetic properties of

matrix material consisting of dilute

alloys of Mn in Cu. In addition, the

technique of vibrating- sample magnetome try is shown to be adaptable to

the measurement of coupling losses in

addition to hysteresis losses in

multifilamentary conductors.

[Contact: Loren F. Goodrich, (303) 497-

3143]

Goodrich, L.F. , Bray, S.L., and Clarl

A.F., Current-Ripple Effect c Superconductive dc Critical -Currei

Measurements, Advances in Cryogeni

Engineering Materials, Vol. 34, pj

1019-1026 (1988).

The effect of current ripple or noise c dc critical-current measurements w

systematically studied. Measurement

were made on multifilamentary Nbl

superconductors. A low-noise, batter]

powered current supply was required i this study in order to make the pure < critical-current measurements. Also, j electronic circuit that simulates

superconductor's general current-voltaj

characteristic was developed and used < an analysis tool. In order to mal

critical-current measurements in whi<

current ripple was present, the battel

supply was modified to allow tl

introduction of controlled amounts of * ripple. In general, ripple in a currei

supply becomes more significant abo1

' 500 A, because effective filtering

difficult. The effect of current ripp!

is a reduction in the measured < critical current; however, ripple < sufficient amplitude can result i arbitrary measurement results. T1

results of this work are general ai

quantitatively applicable to tt evaluation of critical -current data ai

measurement systems. A theoretic*

model was developed to further suppoi

and explain the ripple effect. / unexpected benefit of this work was th*

it led to a more precise method fc

general critical-current data acquisj

tion. Problems common to all large

conductor critical-current measurement

are discussed.

[Contact: Loren F. Goodrich, (303) 491 3143]

Magnetic Materials & Measurements

Recently Published

Fickett, F.R. , Transverse Magnetoresii

tance of Oxygen- Free Copper, IEi

Transactions on Magnetics, Vol. 24, N< 2, pp. 1156-1158 (March 1988).
!EE Technical Progress Bulletin - October 1988 Page 17

gnetic Materials (cont'd.)

cent studies on the magnetoresistance

copper with residual resistance

tios (RRR) in the range 100 to 1000

ing cold work and irradiation as

rameters modifying RRR show a large

read in the appropriate region of the

hler plot. This spread is much larger

an that found in our earlier work on

ry pure copper in which we used

mperature as the main variable. We

port results of 4-K magnetoresistance

asurements on a large number of

mples of copper from various sources

d in various states of cold work,

rain, and reanneal. A new look is

ken at the Kohler plot as a method for

edicting magnetoresistive behavior,

ontact: Frederick R. Fickett, (303)

7-3785]

her Electrical Systems Topics

Recently Published

psik, F.I., Kelley, E.F., and MartzDff , F.D. , A Review of Candidate

ethods for Detecting Incipient Defects

ie to Aging of Installed Cables in

liclear Power Plants, NBSIR 88-3774

May 1988).

/eral types of test methods have been

>posed for detecting incipient

cects due to aging in cable insulation

;tems, none offering certainty of

cecting all possible types of defects,

ae methods constitute direct detection

a defect in the cable; other methods

icect changes in electrical or non-

(ftctrical parameters from which

icerences can be drawn on the integrity

the cable. The paper summarizes the

st year of a program conducted at the

< ional Bureau of Standards to assess

potential of success for in-situ

i ection of incipient defects by the

k t promising of these methods.

Intact: Francois D. Martzloff, (301)

.j -2409]

3 CTROMAGNETIC INTERFERENCE

Radiated Electromagnetic Interference

Released for Publication

Crawford, M.L. , and Ladbury, J.M.,

Shielding Effectiveness Measurements of

Cables and Connectors Using a ModeStirred Chamber, to be published in the

Proceedings of the 1988 IEEE EMC

International Symposium, Seattle,

Washington, August 1-5, 1988.

The mode-stirred method for measuring

the shielding effectiveness (SE) of

cables and connectors as specified in

MIL-STD-1344A Method 3008 is examined.

Problems encountered in applying the

method are identified and recommendations are provided to improve the

measurement results. These include

chamber design, type and placement of

transmitting and reference receiving

antenna, determination and correction

for VSWR of the reference antenna and

equipment under test, and the measurement approach to use at specified test

frequencies. Design and measurement

setups for a small mode-stirred chamber

suitable for performing SE measurements

in the frequency range from 1 to 18 GHz

with dynamic ranges up to 130 dB are

given along with SE measurement results

of some sample equipment.

[Contact: Myron L. Crawford, (303) 497-

5497]

Cruz, J.E., and Larsen, E.B., Alternative Techniques for Some Typical MILSTD-461/462 Types of Measurements, to

be published as NIST Technical Note

1320.

Most testing for MIL-STD-461/462 is

performed in a shielded enclosure

(screenroom) which leads to uncertainty

in the measurement of emissions from

electronic equipment, or the susceptibility of equipment to electromagnetic

radiation. Possible alternative

techniques for improved measurements in

a screenroom have been developed by the

National Bureau of Standards. These

techniques are covered in this report.
Page 18 CEEE Technical Progress Bulletin - October 19

Radiated EMI (cont'd.)

This report presents antenna factors

determined in a screenroom which was

partially loaded with radio -frequency

absorbing material, using the twoantenna insertion- loss technique. These

antenna factors are compared with the

antenna factors obtained in an unloaded

screenroom, a fully loaded screenroom

(anechoic chamber) , and at an open-field

site. In addition, measurements at the

eight corners of a cube were made in the

partially loaded and fully loaded

screenrooms to determine the field

deviation at the eight corners of the

cube with respect to its center. Also,

measurement improvements are quantified

for the electric-field strength beneath

a single-wire transmission line, in a

partially loaded screenroom. Finally,

electric-field measurements were made on

top of the grounded table in a partially

loaded screenroom to determine the field

strength variation above the table.

[Contact: Jose E. Cruz, (303) 497-3763]

Kanda , M . , and Orr , R . D . , Generation of

Standard Electromagnetic Fields in a

TEM Cell, to be published as NIST

Technical Note 1319.

This paper documents the facilities and

procedures employed by the National

Bureau of Standards to calibrate radiofrequency electric-field probes using a

transverse electromagnetic (TEM) cell.

The advantages, limitations, and

physical characteristics of TEM cells

are presented. Impedance, field

uniformity, and mode structure, critical

aspects of a cell as a standard field

enclosure, are discussed. The paper

concludes with sections on setup and

measurement procedures for users

uncertainty in the standard field, and

statistical control of the calibration

system. Copies of key references are

included to provide ready access to the

details of topics summarized in the

text

[Contact: Motohisa Kanda, (303) 497-

5320]

Koepke , G.H. , Ma, M.T., and Bensem*

W.D. , Theory and Measurements < Radiated Emissions Using a TEM Cell.

The transverse electromagnetic cel

(TEM) is widely used to evaluate tl

electromagnetic characteristics < electrically small devices. This pap<

reviews the theoretical basis for

technique to quantify the radiat<

emissions from any such device in tl

cell. The technique is well suited i an automated test system, provided tl mechanical motions required can 1 controlled by a computer. The difficu!

ties associated with these mechanic,

motions are discussed and possib!

solutions are proposed. The measuremei

technique is also expanded to inclu<

multiple-frequency sources in additi<

to single- frequency sources.

[Contact: Galen H. Koepke, (303) 49

5766]

Recently Published

Hill, D.A. , A Circular Array for Plan*

Wave Synthesis, IEEE Transactions < Electromagnetic Compatibility, Vol. 31 No. 1, pp. 3-8 (February 1988).

We analyze a circular array of electr:

line sources for generating a unifo:

plane wave in the interior region of tl array. Identical results for tl synthesized element weightings a: obtained using matrix inversion or

Fourier series technique. A physic;

optics approximation for the elemei

weightings is also presented, but

yields a much poorer result for tl synthesized field. The angle of arriv;

of the plane wave can be scanned 1 recalculating the element weighting;

and the quality of the field

maintained. Frequency scanning is al;

possible, but the number of arr;

elements limits the maximum frequency.

[Contact: David A. Hill, (303) 49'

3472]

Kanda, M. , and Driver, L.D., An Opt:

cally Linked Electric and Magnet:

Field Sensor for Poynting Vect<
1EE Technical Progress Bulletin - October 1988 Page 19

iiated EMI (cont'd.)

sasurements in the Near Field of

adiating Sources, Digest of the 1988

inference on Precision Electromagnetic

sasurements, Tsukuba, Japan, June 7-

D, 1988, pp. 32-33.

improved, single -element antenna

ising technique is described which can

nultaneously measure the electric (E)

Bid, magnetic (H) field, and timependent Poynting vector of electromagtic (EM) fields. Two radio -frequency

Ltages are produced which, along with

Lative phase and frequency informant are transmitted to a remotely

:ated vector analyzer by a pair of

:ched fiber optic downlinks,

rntact: Motohisa Kanda, (303) 497-

> 0 ]

M.T. , Theory and Measurements of

lintentional Radiators, Digest of the

>88 Conference on Precision Electroignetic Measurements, Tsukuba, Japan,

me 7-10, 1988, pp. 30-31.

characterizing an unknown emitter

th equivalent vector electric- and

r,ne tic -dipole moments, we formulate a

iioretical basis to express the

liation properties of such an emitter

terms of these unknown dipole

(tents. Power and relative phase

inurements from appropriate ports of a

nsverse electromagnetic cell, when

emitter is placed at the cell's

ter, are proven to be sufficient to

ermine quantitatively the unknowns

,, therefore, the radiation characistics

ntact : Mark T. Ma, (303) 497-3800]

•da, J.P., Kanda, M. , Melquist, D.G. , :ga, R.M. , and Norgard, J.D., High

I equency Electric-Field Probe Developint, Proceedings of the International

inference on Electromagnetic Com-

; tibility (EMC EXPO' 88), Washington,

PC., May 10-12, 1988, pp. T15.31-

1)5.37.

Eious designs have been considered for

electric-field probes for the frequency

range 26 to 110 GHz. A fiber optic

temperature sensor to detect the

heating of a resistive strip was

designed, built, and tested. With

increased sensitivity, this design may

be capable of operating to above 100

GHz.

[Contact: James P. Randa, (303) 497-

3150]

Vanzura, E.J., Automated system for

Electromagnetic Field Generation and

Immunity Testing, Proceedings of the

1988 IEEE Instrumentation/Measurement

Technology Conference, San Diego,

California, April 19-22, 1988, pp. 3-

10 .

An interactive computer-controlled

system has been constructed for radiated

immunity measurements. It can set up a desired unperturbed field strength at a

point in space and simultaneously

measure field strengths and polarizations at up to ten different positions.

Field mapping experiments have been

performed with the system in an anechoic

chamber, a partially loaded shielded

room, and an unloaded shielded room.

Results confirm dramatic improvement in

spatial field uniformity as more

absorber is used. If the unperturbed

fields in a specified test volume do not

deviate more than a desired amount for

any frequency of interest, meaningful

immunity tests can be performed. An

equipment under test is placed into the

test volume and its response to

radiation is measured using current

probes and a spectrum analyzer. Such an

experiment requires many mid- experiment

calculations , making automation highly

desirable because of significant time

savings

Our frequency range of interest is 50 to

200 MHz because this is a particularly

difficult frequency band in which to

perform reliable immunity tests. By

measuring the field variations in a test

zone, systematic uncertainty limits due

to spatial field deviations can be

estimated more accurately. This allows
Page 20 CEEE Technical Progress Bulletin - October 191

Radiated EMI ( cont ' d .

)

testing in an anechoic chamber below

what is normally considered its lowest

usable frequency. If an anechoic

chamber is not available, a partially

loaded shielded room can be used, with

the necessary requirement that specifications on spatial field uniformity be

relaxed.

This measurement system can be used in

conjunction with many other facilities,

such as a tranverse electromagnetic

cell, an open-field site (ground screen)

or a reverberating chamber, and can be

used to test at frequencies from the low

kilohertz up to 2 GHz.

[Contact: Eric J. Vanzura, (303) 497-

5752]

Vanzura, E.J., and Adams, J.W., Electromagnetic Fields in Loaded Shielded

Rooms, Test and Measurement World, pp

72ff (November 1987)

This paper describes a computercontrolled feedback system that can

maintain field strength levels within

moderate bounds inside a partially

loaded shielded room. These levels are

relatively uniform over a large enough

volume to allow radiated immunity

testing of moderate-sized objects. The

frequency range depends on the characteristics of the transmit antenna; we

used 50 to 200 MHz, which is a difficult

range to cover because of limitations of

other EMC susceptibility test facilities .

The measurement system consists of a

computer, signal generator, amplifier,

biconical antenna, and an isotropic

probe system.

[Contact: Eric J. Vanzura, (303) 497-

5752]

Wilson, P.F., A Comparison Between NearField Shielding-Effectiveness Measurements Based on Coaxial Dipoles and on

Electrically Small Apertures, IEEE

Transactions on Electromagnetic

Compatibility, Vol. 30, No. 1, pp . 23-

28 (February 1988).

The near-field shielding effectivenes

of a material may be measured by placir

it between two closely spaced dipole

(electric or magnetic) and noting th

resulting insertion loss. An alterna

tive approach is to cover an electrical

ly small aperture with the test materia

and to measure the resulting loade

aperture polarizability (electric c magnetic) , as is done in a dual TE

cell. Expressions are developed here!

which relate these two configurations.

[Contact: Perry F. Wilson, (303) 497

3842]

Wu, D.I., and Chang, D.C., The Effect c a Large Rotating Scatterer in

Rectangular Cavity, NBS Technical Not

1317 (March 1988).

In a mode-stirred chamber, the field j the cavity is perturbed with a stirrei

i.e., a rotating scatterer, in such

way that it is uniformly random. ] this report, we investigate the ke

factor which governs the effectivenes

of a stirrer. By examining th

fundamental properties associated with

perturbing body in a cavity, we fir

that the key to effective fiel

perturbation lies in the shifting c eigenmode frequencies. When the size c the perturbing body becomes large, th

shifting may be large enough that th

new perturbed modes no longer resembl

the original unperturbed modes . 1 effect, as this body rotates, differer

perturbed modes may be excited, thu

introducing randomness into the systen

We illustrate this phenomenon t examining a 2D cavity with a 1 perturbing body. Using the transmis

sion- line-matrix method, the shifting c eigenfrequencies and the variation c the magnitude of the fields fc

different stirrer sizes are computed

From this analysis, useful insights ai

drawn which include an analogy betwee

the action of a large stirrer and

frequency modulator.

[Contact: Doris Wu, (303) 497-3214]
EEE Technical Progress Bulletin - October 1988 Page 21

nducted Electromagnetic Interference

Released for Publication

rtzloff, F.D., Coupling, Propagation,

nd Side Effects of Surges in an

ndustrial Building, to be published in

he Proceedings of the IEEE/IAS Annual

eeting, Pittsburgh, Pennsylvania,

ctober 3-6, 1988.

asurements were made in an industrial

ilding to determine the propagation

aracteristics of surges in the ac

wer wiring of the facility. The

rges , of the unidirectional or the

ng-wave types described in ANSI/IEEE

2.41-1980, were injected at one point

the system, and the resulting surges

riving at the other points were

asured. The results show how

idirectional surges couple through

ansformers and produce a ring-wave

mponent in the response of the system,

unexpected side effect of the surges,

plied to the power lines only, was

parent damage suffered by the data

pe input components of some computeriiven printers in the building,

lontact: Francois D. Martzloff, (301)

5-2409]

rtzloff, F.D., Surge Testing: Don't

id Yourself, Don't Kill Yourself, to

2 published in the EMC Technology and

interference Control News (August

988) .

creasing awareness of the sensitivity

electronics to surge effects has led

a proliferation of surge suppressors

the market. Confronted with a

Eficult choice, some users are

iluating the performance of these

/ices by surge testing. However, the

fihniques involved in these tests are

iferent from typical electromagnetic

npatibility (EMC) testing because of

i single -shot nature of the event and

( :ause of the potential personal

:ards involved in surge testing. This

:icle presents a brief overview of

:ge testing, focusing on the techlues required in performing valid

tests under safe conditions.

[Contact: Francois D. Martzloff, (301)

975-2409]

Martzloff, F.D.

and Leedy, T.F.,

Electrical Fast Transient Tests:

Applications and Limitations , to be

published in the Proceedings of the

IEEE Conference, Dallas, Texas,

September 12, 1988 (Petroleum and

Chemical Industry Committee)

The Technical Committee TC 65 of the

International Electrotechnical Commission (IEC) has promulgated a new

document (IEC 801-4) requiring demonstration of the immunity of industrial

process control equipment to fast

transients occurring in power and data

lines. These fast transients contain

high-frequency components, intuitively

expected to suffer greater attenuation

than the lower -frequency components as

they propagate along the lines.

Quantifying this intuitive expectation

provides a perspective on the severity

of the situation and helps in defining

realistic test requirements. To that

end, this paper describes specific

measurements conducted for typical lowvoltage power line configurations;

modeling of the attenuation provides a

tool for understanding the significance

of the line parameters and extends the

usefulness of results to general cases.

[Contact: Francois D. Martzloff, (301)

975-2409]

Recently Published

Martzloff, F.D., and Levinson, L.M.

Surge-Protective Devices [original

title . . . and Zinc Varistor Technology] , in Electronic Ceramics--

Properties, Devices, and Applications,

L.M. Levinson, Ed. , Chapter 5 (Marcel

Dekker, Inc., New York, 1988), pp. 275-

305.

A tutorial description of surgeprotective devices and their applications and requirements is given,

comparing the three basic technologies:

crowbars, varistors, and avalanche
Page 22 CEEE Technical Progress Bulletin - October 198

Conducted EMI (cont'd.)

diodes. The varistor material is

described in detail from the electronic

ceramics point of view. Thirty

references are given.

[Contact: Francois D. Martzloff, (301)

975-2409]

ADDITIONAL INFORMATION

Lists of Publications

Gibson, K.A. , Page, J.M., and Miller,

C.K.S., A Bibliography of the NBS

Electromagnetic Fields Division

Publications, NBSIR 85-3040 (February

1986)

This bibliography lists publications of

the National Bureau of Standards'

Electromagnetic Fields Division for the

period from January 1984 through

September 1985, with selected earlier

publications from the Division's

predecessor organizations.

[Contact: Kathryn A. Gibson, (303) 497-

3132]

Kline, K.E., and DeWeese, M.E.,

Metrology for Electromagnetic Technology: A Bibliography of NBS Publications, NBSIR 87-3074 (June 1987).

This bibliography lists the publications

of the personnel of the Electromagnetic

Technology Division of NBS in the period

from January 1970 through December 1986.

A few earlier references that are

directly related to the present work of

the Division are included.

[Contact: Sarabeth Moynihan, (303) 497-

3678]

Palla, J.C., and Meiselman, B. , Electrical and Electronic Metrology: A

Bibliography of NBS Electrosystems

Division Publications, NBS List of

Publications 94 (January 1988)

This bibliography covers publications of

the Electrosystems Division, Center for

Electronics and Electrical Engineering,

NBS, and of its predecessor sections for

the period January 1963 to January 1988.

A brief description of the Division's

technical program is given in the

introduction.

[Contact: Jenny C. Palla, (301) 975-

2220 ]

Walters, E.J., Semiconductor Measurement

Technology, NBS List of Publications 72

[a bibliography of NBS publications

concerning semiconductor measurement

technology for the years 1962-1987]

(March 1988).

This bibliography contains reports of

work performed at the National Bureau of

Standards in the field of Semiconductor

Measurement Technology in the period

from 1962 through December 1987. An

index by topic area and a list of

authors are provided.

[Contact: E. Jane Walters, (301) 975-

2050]

RECENTLY ISSUED

STANDARD REFERENCE MATERIALS

The Semiconductor Electronics Division

announces the release of a new Standard

Reference Material (SRM) for ellipsometrically derived thickness and

refractive index of a silicon dioxide

film on silicon. Available for sale to

the public through the NIST Office of

Standard Reference Materials [for

orders, (301) 975-6776], SRM 2530 is

separately available for three oxide

thicknesses: 50 nm (2530-1), 100 nm

(2530-2), and 200 nm (2530-3).

This SRM was developed to respond to

industry needs to evaluate the accuracy

of ellipsometers , but may also be usedt

as aid in the calibration of variousJ

other optical and mechanical thickness i monitoring instruments. j

l Each SRM consists of a 76-mm (3-in.)i

diameter silicon wafer on which a uniform silicon dioxide layer was grown,!

patterned, and partially covered witbil

chromium. The certified values wereei

determined from measurements made using!

the highly accurate ellipsometerlt
:EEE Technical Progress Bulletin - October 1986 Page 23

Recently Issued SRMs (cont'd.)

developed in the Division and are the

ellipsometric parameters delta, A, and

psi, if>, at a wavelength of X — 632.8 nm.

The SRMs are also certified for the

derived values of thickness and refractive index of its silicon dioxide layer

determined by using a two- layer model

consisting of a silicon dioxide layer on

a thin silicon-rich oxide interlayer.

[Contact: George A. Candela, (301) 975-

2086]

1988 CEEE CALENDAR

October 26-28, 1988 (Boulder, CO)

Twentieth Symposium on Optical Materials

for High Power Lasers (Boulder Damage

Symposium). In addition to the NIST,

this symposium is sponsored by the

American Society for Testing and

Materials, the Air Force Office of

iScientific Research, the Office of Naval

Research, the Defense Advanced Research

^Projects Agency, and the Department of

Energy. It serves as the principal

forum for the exchange of information on

the physics and technology of materials

for high-power lasers. Topics to be

discussed include new materials, bulk

damage phenomena, surface and thin- film

damage, design considerations for highpower systems, and fundamental mechanisms of laser- induced damage.

[Contact: Aaron A. Sanders,. (303) 497-

3341 ]

February 7-9, 1989 (San Diego, CA)

I

lEEE Semiconductor Thermal and Temperature Measurements Symposium. This

fifth annual SEMI-THERM symposium is

[sponsored by the Components, Hybrids,

md Manufacturing Technology Society of

REE in cooperation with NIST and

constitutes an international forum for

j:he presentation of new developments

'elating to generation and removal of

fieat within semiconductor devices

aeasurement of device temperatures , and

he simulation of device and system

hermal behavior. Major SEMI -THERM

topic areas include: thermal measurements; simulation, computation, and

software; thermal characterization; and

applications

The program includes keynote speakers,

technical presentations, tutorial

sessions, workshops, and an exhibit. In

addition, the Semiconductor Equipment

and Materials Institute (SEMI) and the

Joint Electron Devices Engineering

Council (JEDEC) have scheduled in

conjunction with SEMI -THERM several

Standards Committee Task Force meetings,

to which attendees are invited.

[Contact: Frank F. Oettinger, (301)

975-2054]

June 12-15, 1989 (Gaithersburg, MD)

International Conference on Narrow Gap

Semiconductors and Related Materials.

Jointly sponsored by the National

Institute of Standards and Technology

along with the U.S. Air Force Office of

Scientific Research, the American

Physical Society, the U.S. Office of

Naval Research, Texas Instruments, and

the University of North Texas, this

conference is the first in the narrow

gap field since 1981. The scope of the

conference includes such topics as

crystal growth and new materials; twodimensional physics; surfaces and

interfaces; superlattices and heterostructures; transport; impurities and

defects; optical properties; nonlinear

optical effects; device physics; lattice

properties; and hot or nonequilibrium

carrier effects.

[Contact: David G. Seiler, (301) 975-

2081]

September 11-13, 1989 (GarmischPartenkirchen, FDR)

VLSI and GaAs Chip Packaging Workshop.

The IEEE CHMT Society and the National

Institute of Standards and Technology

are co-sponsoring the Eighth VLSI

Packaging Workshop. Topics to be

discussed include VLSI package design;

integrated package design; multichip

module design; WSI packaging; package
Page 24 CEEE Technical Progress Bulletin - October 198i

CEEE Calendar (cont'd.)

thermal design; package electrical

design; GaAs IC packaging; VLSI package

interconnection options; VLSI package

materials and die-attach solutions; and

failure mechanism and quality of VLSI

packages. All attendees are expected to

be specialists working in the field and

to participate in discussions.

[Contact: George G. Harman, (301) 975-

2097]

December 7-8, 1989 (Gaithersburg, MD)

Power Semiconductor Devices Workshop.

[Contact: David L. Blackburn, (301)

975-2068]

CEEE SPONSORS

National Institute of Standards and

Technology

U.S. Air Force

Newark Air Force Station; Rome Air

Development Center; Space & Missile

Organization; U.S. Air Force

Headquarters; Wright- Patterson AFB;

Technical Applications Center

(Patrick); Kirtland AFB; Electronics

Security Command

U.S. Army

Fort Belvoir; Fort Monmouth; Fort

Huachuca; Harry Diamond Laboratory;

Materials & Mechanics Research Center;

Redstone Arsenal; Strategic Defense

Command; AVRADCOM (Aviation)

Department of Commerce

Patent and Trademark Office

Department of Defense

Defense Nuclear Agency; Defense

Advanced Research Projects Agency;

National Security Agency; Combined

Army/Navy/Air Force Calibration

Coordination Group

Department of Energy

Energy Systems Research; Fusion Energy

High Energy & Nuclear Physics;

Bonneville Power Administration

Department of Justice

Law Enforcement Assistance

Administration

U.S. Navy

Naval Ocean Systems Center; Weapons

Support Center/Crane; Naval Weapons

Station; Office of Naval Research;

Naval Sea Systems Command; Naval

Postgraduate School; Naval Ship

Research Development Center; Naval Air

Systems Command; Naval Research

Laboratory; Aviation Logistics

Center/Patuxent; Naval Explosive

Ordnance

National Aeronautics & Space

Administration

Goddard Space Flight Center; Lewis

Research Center

Nuclear Regulatory Commission

Department of Transportation

National Highway Traffic Safety

Administration

Sandia National Laboratories
I 4 A (RE V- 2-80

1. PUBLICATION OR

REPORT NO.

2. Performing Organ. Report No. 3. Publication Date

NISTIR 88-3866 October 1988

J.S. DEPT. OF COMM.

BLIOGRAPHIC DATA

EET (See instruction s) TLE AND SUBTITLE

snter for Electronics and Electrical Engineering Technical Progress Bulletin Covering

snter Programs, April to June 1988, with 1988 CEEE Events Calendar

)THOR(S)

. Jane Walters, compiler

1RF0RMING ORGANIZATION (If joint or other than NBS. see in stru ction s)

ATIONAL BUREAU OF STANDARDS

.S. DEPARTMENT OF COMMERCE

AITHERSBURG, MD 20899

7. Contract/Grant No.

8 . Type of Report & Period Covered

April-June 1988

ONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City. State, ZIP)

J PPLEMENTARY NOTES

.1 technical information included in this document has been approved for publication

reviously

p Document describes a computer program; SF-185, FIPS Software Summary, is attached.

3STRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bl iography or literature survey, mention it here)

'.is is the twenty-third issue of a quarterly publication providing information on

-e technical work of the National Institute of Standards and Technology (formerly

tional Bureau of Standards) Center for Electronics and Electrical Engineering,

is issue of the CEEE Technical Progress Bulletin covers the second quarter of

lendar year 1988. Abstracts are provided by technical area for both published

pers and papers approved by NIST for publication.

Y WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolon s) fennas; electrical engineering; electrical power; electromagnetic interference;

sctronics; instrumentation; laser; magnetics; microwave; optical fibers; semiconctors; superconductors

AILABILITY 14. NO. OF

PRINTED PAGES

Uni i mi ted

For Official Distribution. Do Not Release to NTIS 28

Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C.

20402. 15. Price

Order From National Technical Information Service (NTIS), Springfield, VA. 22161 $11.95

U SCOMM-DC 6043-P80
U.S. DEPARTMENT OF COMMERCE

NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY

GAITHERSBURG, MD 20899

RETURN POSTAGE GUARANTEED

OFFICIAL BUSINESS

PENALTY FOR PRIVATE USE, $300

BULK RATE

POSTAGE & FEES PAID NIST

PERMIT No. G195

KEY CONTACTS:

i ij-.-1-aLi ,

. .i 'j Center Headquarters (720) Director, Mr. Judson C. French (301) 975-2220

Deputy Director, Mr. Robert I. Scace (301) 975-2220

Electrosystems Division (722) Chief, Dr. Oskars Petersons (301) 975-2400

Electromagnetic Fields Division (723) Chief, Dr. Ramon C. Baird (303) 497-3131

Electromagnetic Technology Division (724) Chief, Dr. Robert A. Kamper (303) 497-3535

Semiconductor Electronics Division (727) Chief, Mr. Frank F. Oettinger (301) 975-2054

INFORMATION:

For additional Information on the Center for Electronics and Electrical Engineering, write or call:

Center for Electronics and Electrical Engineering

National Institute of Standards and Technology

Metrology Building, Room B-358

Gaithersburg, MD 20899

Telephone (301) 975-2220