# Patent

## Title
Magnetic shield for magnetic recording head

## Abstract

A magnetic shield for a magnetic recording head includes a plurality of ferromagnetic layers, a spacer layer, and a buffer layer, wherein the buffer layer includes Co, Fe, B, or a combination thereof and effectively reduces irregular grain growth within the ferromagnetic layers, the spacer layer includes Ru, and the ferromagnetic layers magnetically couple through each of the buffer layer and the spacer layer.

## Background
TECHNICAL FIELD
The present disclosure relates to magnetic recording technology, and in particular, to a magnetic shield for a magnetic recording head that is stable and exhibits efficient antiparallel coupling performance.
BACKGROUND
Data storage media density has significantly increased over the last several decades. Thin film recording head technology has advanced to keep up with increasing data storage media density through the advent of technologies such as giant magnetoresistive (GMR), tunneling magnetoresistive (TMR), or perpendicular magnetic recording (PMR). Each of these magnetic recording technologies may incorporate a magnetic shield as a component of the completed magnetic recording head system. As the various recording head technologies target smaller and smaller bit sizes, increased magnetic shield domain stabilization is required to reduce magnetic noise. One method of managing magnetic shield domain stability is to incorporate an anti-ferromagnetic material to bias the shield into a desired magnetic orientation, creating an antiparallel composite shield configuration. In such a configuration, the thin film recording sensor is surrounded by a soft bias material, and a pair of ferromagnetic layers separated by a spacer layer are deposited thereon, such that the upper ferromagnetic layer is magnetically pinned to the lower ferromagnetic layer, but separated by the spacer. In this shield configuration, as the spacer layer thickness is increased, magnetic coupling performance decreases, effectively limiting the spacer thickness. However, at very thin spacer thicknesses, shield stability decreases due to irregular grain growth in the ferromagnetic layers surrounding the spacer. The irregular growth increases with multiple anneals of the shield, and thus shield stability decreases with multiple anneals. This constraint requiring the spacer to be thicker to avoid shield instability, but thinner to maintain a strong antiparallel coupling performance, effectively limits the effectiveness of the currently available magnetic shields.



BRIEF DESCRIPTION OF THE DRAWINGS
Various embodiments are illustrated by way of example, and not limitation, in the figures of the accompanying drawings in which:
FIG. 1 illustrates a cross-section of a magnetic shield for a magnetic recording head without a buffer layer;
FIG. 2 illustrates a cross-section of a magnetic shield for a magnetic recording head with a buffer layer consistent with embodiments disclosed herein;
FIG. 3 is a graph showing increasing soft bias (SB) stability corresponding to increasing antiparallel coupling strength;
FIG. 4A is a graph illustrating magnetic coupling strength in relation to Ru layer thickness for example magnetic shields that incorporate a buffer layer consistent with embodiments disclosed herein;
FIG. 4B is a graph illustrating magnetic coupling strength in relation to Ru layer thickness for magnetic shields that do not incorporate a buffer layer;
FIG. 5A is a Magneto-Optical Kerr Effect (MOKE) graph comparing the magnetic alignment in response to an external magnetic field between a magnetic shield with a buffer layer and a magnetic shield without a buffer layer prior to exposure to an anneal process;
FIG. 5B is a MOKE graph comparing the magnetic alignment in response to an external magnetic field between a magnetic shield with a buffer layer and a magnetic shield without a buffer layer following exposure to an anneal process;
FIG. 6 is a process flow chart illustrating a method for forming a magnetic shield with a buffer layer consistent with embodiments disclosed herein.



The figures are not intended to be exhaustive or to limit the invention to the precise form disclosed. It should be understood that the invention can be practiced with modification and alteration, and that the disclosed technology be limited only by the claims and the equivalents thereof.
DETAILED DESCRIPTION
In the following description, numerous specific details are set forth to provide a thorough understanding of various embodiment of the present disclosure. It will be apparent to one skilled in the art, however, that these specific details need not be employed to practice various embodiments of the present disclosure. In other instances, well known components or methods have not been described in detail to avoid unnecessarily obscuring various embodiments of the present disclosure.
As disclosed herein, a magnetic shield for a magnetic recording head may include a plurality of ferromagnetic layers, a buffer layer; and a spacer layer. For example, the ferromagnetic layers may be NiFe, the buffer layer may be CoFeB, and the spacer layer may be Ru. In some examples, the buffer layer is between 5 Angstroms and 50 Angstroms thick. In one example, the spacer layer is not more than 10 Angstroms thick
Some embodiments of the disclosure provide a process for manufacturing a magnetic shield wherein the process includes depositing a plurality of ferromagnetic layers, depositing a buffer layer, and depositing a spacer layer. For example, a first ferromagnetic layer may be deposited on a magnetic sensor and soft bias layers, a buffer layer may be deposited on the first ferromagnetic layer, a second ferromagnetic layer may be deposited on the buffer layer, a spacer layer may be deposited on the second ferromagnetic layer, and a third ferromagnetic layer may be deposited on the spacer layer. In some examples, the ferromagnetic layers are NiFe. In some examples, the buffer layer is an amorphous CoFeB and the spacer layer is Ru. For example, the ferromagnetic layers may magnetically couple through the buffer layer and the spacer layer. In some embodiments, one or more antiferromagnetic layers are deposited on top of the magnetic shield.
FIG. 1 shows a cross-section of a magnetic shield for a magnetic recording head without a buffer layer. As shown, a magnetic shield without a buffer layer may include ferromagnetic layers 130 and 150 and a spacer layer 140. For example, a thin film recording sensor 110 may be formed on substrate or on another magnetic shield 100, along with soft bias layer 120. A first ferromagnetic layer 130 may be deposited on the magnetic recording sensor 110, spacer 140 may be deposited on first ferromagnetic layer 130, and second ferromagnetic layer 150 may be deposited on spacer 140. In some examples, antiferromagnetic layer 160 may be deposited on second ferromagnetic layer 150, and cap 170 may be deposited on antiferromagnetic layer 160.
Magnetic recording sensor 110 may be either a giant magnetoresistive (GMR), tunneling magnetoresistive (TMR), or perpendicular magnetic recording (PMR) sensor, or other magnetic recording sensor as would be known in the art. The magnetic recording head may be a read head or a write head. In some examples, the magnetic shield may also be formed on both sides of the magnetic recording head. In other examples, the magnetic shield may be formed on a magnetic write head. The magnetic shield technology disclosed herein is not dependent on the method or form of the magnetic read or write head.
Still referring to FIG. 1, in some embodiments, the ferromagnetic layers 130 and/or 150 may be Fe, Ni, or NiFe. Other ferromagnetic alloys may be used as would be known in the art. Spacer 140 may include Ru. Antiferromagnetic layer 160 may include antiferromagnetic materials such as FeMn, IrMn, RuMn, NiO, PtMn, PtPdMn, NiMn, or other antiferromagnetic materials as would be known in the art.
FIG. 2 illustrates a cross-section of a magnetic shield for a magnetic recording head with a buffer layer. An example magnetic shield with a buffer layer may include a plurality of ferromagnetic layers 130A, 130B, and 150, a buffer layer 135, and a spacer layer 140. For example, each ferromagnetic layer may include NiFe, CoFe, or other ferromagnetic material as would be known in the art. The buffer layer 135 may include Co, B, Fe, or an alloy that comprises any of Co, B, or Fe. The spacer layer 140 may include Ru.
In some example magnetic shields, the buffer layer 135 may comprise Co, Fe, and B in varying ratios to increase magnetic coupling efficiency through the ferromagnetic layers. For example, the buffer layer 135 may comprise CoxFeyB, where x, y, and z represent an atomic percent of the total number of atoms in the buffer layer such that, for a total of 100 atomic percent, z=100−x−y and z<35 atomic percent. In several embodiments, buffer layer 135 may be amorphous (e.g. an amorphous CoFeB layer).
Some example buffer layers may comprise at least 70 atomic percent of Co, not more than 10 atomic percent of Fe, and not more than 20 atomic percent of B. Other example buffer layers may comprise between 35 atomic percent and 45 atomic percent Co, between 35 atomic percent and 45 atomic percent Fe, and between 15 atomic percent and 25 atomic percent B. Other example buffer layers may comprise between 0 atomic percent and 50 atomic percent Fe, between 10 atomic percent and 30 atomic percent B, and Co. In other examples, the buffer layer 135 may comprise Co and B, but without any, or only trace amounts of Fe.
In some embodiments of the disclosure, a buffer layer 135 as thin as 3 Angstroms provides sufficient magnetic coupling of the ferromagnetic layers with sufficient reduction of NiFe grain growth. In other embodiments, a buffer layer 135 as thick as 50 Angstroms provides sufficient magnetic coupling of the ferromagnetic layers with sufficient reduction of NiFe grain growth. Other buffer layer thicknesses may be used, as would be known to one of skill in the art, to provide sufficient magnetic and thermal stability by reducing NiFe grain growth while still providing sufficient magnetic coupling of the ferromagnetic layers.
Still referring to FIG. 2, spacer layer 140 may comprise Ru. In some examples, the spacer layer 140 may be between 2 Angstroms and 15 Angstroms thick in order to provide sufficient antiparallel (AP) coupling through the spacer layer. Other spacer thicknesses are possible, as would be known to one of skill in the art, to provide sufficient AP coupling through the spacer layer.
FIG. 3 is a graph showing increasing soft bias (SB) stability with Ru layer thickness corresponding to a peak antiparallel coupling strength. In particular, the graph is a phase diagram showing the coercivity (Hc) of the magnetic shield on the y-axis and the magnetic pin field strength on on the x-axis. The stability line demonstrates that SB stability exists when Hc<Hpin. The data points shown on the right of the stability line (points 360 and 370) demonstrate magnetic shield stability that accomplished with higher magnetic coupling strength (jRu) and with a buffer layer, as disclosed with respect to FIG. 2 above, is incorporated into the magnetic shield. Data points 310, 320, 330, 340, and 350 demonstrate a lower SB stability achieved with smaller magnetic coupling strength and without incorporating a buffer layer.
FIG. 4A is a graph illustrating saturation field level in relation to Ru layer thickness when a buffer layer, as disclosed herein with respect to FIG. 2, is incorporated in the magnetic shield. As illustrated, AP coupling strength is efficient and presents peaks for Ru spacer thicknesses of between 3 Angstroms and 4 Angstroms (the first peak), and again for thicknesses between 7 Angstroms and 8 Angstroms (the second peak). Other peaks may exist for other spacer thicknesses outside of the scale shown in FIG. 4A. The dashed curve in FIG. 4A shows changes in magnetic coupling strength with increasing spacer layer thickness for newly grown ferromagnetic layers. The solid line in FIG. 4A shows changes in magnetic coupling strength with increasing spacer layer thickness for a magnetic shield after a first anneal process. As demonstrated by comparing the two curve lines in FIG. 4A, when a buffer layer is present, there is minimal change to the magnetic coupling strength properties of the magnetic shield layers following an anneal process.
FIG. 4B is a graph illustrating saturation field level in relation to Ru layer thickness when no buffer layer is incorporated in the magnetic shield. As illustrated by FIG. 4B, as spacer thickness increases, AP coupling strength still presents a first peak between 3 Angstroms and 4 Angstroms and a second peak between 7 Angstroms and 8 Angstroms. Similar to the graph in FIG. 4A, the dashed curve in FIG. 4B shows changes in magnetic coupling strength with increasing spacer layer thickness for newly grown ferromagnetic layers. The solid line in FIG. 4B shows changes in magnetic coupling strength with increasing spacer layer thickness for a magnetic shield after a first anneal process. As demonstrated by comparing the two curve lines in FIG. 4B, when no buffer layer is present, there is an increased degradation in magnetic coupling strength with each anneal of the magnetic shield.
FIG. 5A is a graph comparing MOKE curves that demonstrate magnetic coupling performance within a magnetic shield as grown (before an anneal process). A MOKE curve illustrates magnetic alignment in response to an external magnetic field at the surface of a magnetic material by reflecting polarized light off of the service while rotating the plane of polarization. The MOKE instrument detects changes in the returned light that depend on the properties of the magnetic field at the material's surface. As illustrated by FIG. 5A, the magnetic properties at the surface of a magnetic shield, before any anneal process, are similar for magnetic shields with a buffer layer and magnetic shields without a buffer layer.
FIG. 5B is a graph comparing MOKE curves that demonstrate magnetic coupling performance within a magnetic shield following an anneal process. As illustrated by FIG. 5B, the magnetic properties at the surface of the magnetic shield with a buffer layer remain relatively uniform after an anneal process. However, the magnetic properties at the surface of a magnetic shield without a buffer layer show large variance after exposure to an anneal process. Accordingly, the buffer layer increases the magnetic shields magnetic coupling strength stability, even after exposure to an anneal process.
FIG. 6 is a process flow chart illustrating a method for forming a magnetic shield with a buffer layer consistent with embodiments disclosed herein. A method for forming a magnetic shield with a buffer layer may include forming a first ferromagnetic at step 620, forming an amorphous buffer layer with Co and B at step 630, and forming a second ferromagnetic layer at step 640. The method may also include forming spacer layer of Ru at step 650 and a third ferromagnetic layer at step 660. The method may also include forming an anti-ferromagnetic layer at step 670.
Still referring to FIG. 6, the forming of ferromagnetic layers at steps 620, 640, and 660 may include depositing CoFe or NiFe. In some examples, the first ferromagnetic layer of step 620 and third ferromagnetic layer of step 660 comprise CoFe, and the second ferromagnetic layer of step 640 comprises NiFe. In other examples, all three ferromagnetic layers comprise NiFe. The CoFe and NiFe layers may be layered in alternate orders, or incorporate other ferromagnetic materials as would be known to one of skill in the art. For example, the film stack may be layered with NiFe—CoFe—Ru—CoFe—NiFe, or NiFe—CoFe-AFM, or in other alternating fashion so long as it includes multiple ferromagnetic layers with a spacer layer and a buffer layer sandwiched therebetween.
Still referring to FIG. 6, the forming of antiferromagnetic layer at step 670 may include depositing FeMn, IrMn, RuMn, NiO, PtMn, PtPdMn, NiMn, or other antiferromagnetic materials as would be known in the art. In some examples, the first ferromagnetic layer of step 620 may be deposited underneath (on the alternate side) of the thin film magnetic recording sensor and soft-bias layer formed at step 610. This configuration may be referred to as a “bottom shield” film stack configuration as opposed to a “top shield” configuration as shown in FIG. 2.
Still referring to FIG. 6, in some examples, the Ru spacer layer formed in step 650 may be formed to a thickness corresponding to the first peak as disclosed with respect to FIG. 4A. For example, the Ru layer thickness may be between 3 Angstroms and 4 Angstroms. In other examples, the Ru spacer layer formed in step 650 may be formed to a thickness corresponding to the second peak as disclosed with respect to FIG. 4A. For example, the Ru layer thickness may be between 7 Angstroms and 8 Angstroms. Other spacer layer thicknesses may be used to optimize AP coupling and field saturation strength. Similar to the magnetic shield disclosed in FIG. 2, the buffer layer of step 630 may be deposited as thin as 3 Angstroms, but because the disclosed buffer layer exhibits magnetic properties, it may also be formed to thicknesses upwards of 50 Angstroms or more without overly degrading AP coupling performance and shield stability. Accordingly, thicker buffer layers may be deposited if necessary to reduce irregular grain growth in the ferromagnetic layers around the spacer layer.
Although described above in terms of various exemplary embodiments and implementations, it should be understood that the various features, aspects and functionality described in one or more of the individual embodiments are not limited in their applicability to the particular embodiment with which they are described, but instead can be applied, alone or in various combinations, to one or more of the other embodiments of the application, whether or not such embodiments are described and whether or not such features are presented as being a part of a described embodiment. Thus, the breadth and scope of the present application should not be limited by any of the above-described exemplary embodiments.
The terms “over,” “under,” “between,” and “on” as used herein refer to a relative position of one media layer with respect to other layers. As such, for example, one layer disposed over or under another layer may be directly in contact with the other layer or may have one or more intervening layers. Moreover, one layer disposed between two layers may be directly in contact with the two layers or may have one or more intervening layers. In contrast, a first layer “on” a second layer is in contact with that second layer. Additionally, the relative position of one layer with respect to other layers is provided assuming operations are performed relative to a substrate without consideration of the absolute orientation of the substrate.
Terms and phrases used in this document, and variations thereof, unless otherwise expressly stated, should be construed as open ended as opposed to limiting. As examples of the foregoing: the term “including” should be read as meaning “including, without limitation” or the like; the term “example” is used to provide exemplary instances of the item in discussion, not an exhaustive or limiting list thereof; the terms “a” or “an” should be read as meaning “at least one,” “one or more” or the like; and adjectives such as “conventional,” “traditional,” “normal,” “standard,” “known” and terms of similar meaning should not be construed as limiting the item described to a given time period or to an item available as of a given time, but instead should be read to encompass conventional, traditional, normal, or standard technologies that may be available or known now or at any time in the future. Likewise, where this document refers to technologies that would be apparent or known to one of ordinary skill in the art, such technologies encompass those apparent or known to the skilled artisan now or at any time in the future.
The presence of broadening words and phrases such as “one or more,” “at least,” “but not limited to” or other like phrases in some instances shall not be read to mean that the narrower case is intended or required in instances where such broadening phrases may be absent. The use of the term “module” does not imply that the components or functionality described or claimed as part of the module are all configured in a common package. Indeed, any or all of the various components of a module, whether control logic or other components, can be combined in a single package or separately maintained and can further be distributed in multiple groupings or packages or across multiple locations.
Additionally, the various embodiments set forth herein are described in terms of exemplary block diagrams, flow charts and other illustrations. As will become apparent to one of ordinary skill in the art after reading this document, the illustrated embodiments and their various alternatives can be implemented without confinement to the illustrated examples. For example, block diagrams and their accompanying description should not be construed as mandating a particular architecture or configuration.

## Claims

1. A magnetic shield for a magnetic recording head, the magnetic shield comprising:
a plurality of ferromagnetic layers;
a buffer layer comprising Co and B; and
a spacer layer located between two of the ferromagnetic layers;
wherein the buffer layer comprises between 35 atomic percent and 45 atomic percent Co, between 35 atomic percent and 45 atomic percent Fe, and between 15 atomic percent and 25 atomic percent B; and
the spacer layer is not more than 10 Angstroms thick.

2. The magnetic shield of claim 1, wherein the buffer layer is at least 5 Angstroms and not more than 50 Angstroms thick.

3. A magnetic shield for a magnetic recording head, the magnetic shield comprising:
a first ferromagnetic layer comprising Ni and Fe;
a second ferromagnetic layer comprising Ni and Fe;
a third ferromagnetic layer comprising Ni and Fe;
a buffer layer comprising Co and B; and
a spacer layer comprising Ru;
wherein the buffer layer comprises between 35 atomic percent and 45 atomic percent Co, between 35 atomic percent and 45 atomic percent Fe, and between 15 atomic percent and 25 atomic percent B;
the spacer layer is not more than 10 Angstroms thick;
the first ferromagnetic layer is located above a magnetic sensor, the buffer layer is above the first ferromagnetic layer, the second ferromagnetic layer is above the buffer layer, the spacer layer is above the second ferromagnetic layer, and the third ferromagnetic layer is above the spacer layer; and
the first ferromagnetic layer magnetically couples through the buffer layer to the second ferromagnetic layer.