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| 31.1.2022 | EN | Official Journal of the European Union | L 20/282 |

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Corrigendum to Commission Delegated Regulation (EU) 2022/1 of 20 October 2021 amending Regulation (EU) 2021/821 of the European Parliament and of the Council as regards the list of dual-use items

(
[Official Journal of the European Union L 3 of 6 January 2022](http://publications.europa.eu/resource/oj/JOL_2022_003_R_TOC)
)

On page 142, in the Annex, point 3B001.f is replaced as follows:

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| ‘f. | Lithography equipment as follows: | | | | | | | | --- | --- | --- | --- | --- | --- | | 1. | Align and expose step and repeat (direct step on wafer) or step and scan (scanner) equipment for wafer processing using photo-optical or X-ray methods and having any of the following: | | | | --- | --- | | a. | A light source wavelength shorter than 193 nm; or | | | | | --- | --- | | b. | Capable of producing a pattern with a 'Minimum Resolvable Feature size' (MRF) of 45 nm or less; Technical Note: The 'Minimum Resolvable Feature size' (MRF) is calculated by the following formula: Image 1 where the K factor = 0,35 | | | | | | | | | | | | | | | | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | | 2. | Imprint lithography equipment capable of producing features of 45 nm or less; | | | | | | | | | | | | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | | Note: | 3B001.f.2. includes: | | | | --- | --- | | — | Micro contact printing tools | | | | | --- | --- | | — | Hot embossing tools | | | | | --- | --- | | — | Nano-imprint lithography tools | | | | | --- | --- | | — | Step and flash imprint lithography (S-FIL) tools | | | | | | | | | | | | | | | | | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | | 3. | Equipment specially designed for mask making having all of the following: | | | | --- | --- | | a. | A deflected focussed electron beam, ion beam or "laser" beam; and | | | | | | | | | | | --- | --- | --- | --- | --- | --- | --- | --- | | b. | Having any of the following: | | | | --- | --- | | 1. | A full-width half-maximum (FWHM) spot size smaller than 65 nm and an image placement less than 17 nm (mean + 3 sigma); or | | | | | --- | --- | | 2. | Not used; | | | | | --- | --- | | 3. | A second-layer overlay error of less than 23 nm (mean + 3 sigma) on the mask; | | | | | | | | | | | | | | | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | | 4. | Equipment designed for device processing using direct writing methods, having all of the following: | | | | --- | --- | | a. | A deflected focused electron beam; and | | | | | | | | | --- | --- | --- | --- | --- | --- | | b. | Having any of the following: | | | | --- | --- | | 1. | A minimum beam size equal to or smaller than 15 nm; or | | | | | --- | --- | | 2. | An overlay error less than 27 nm (mean + 3 sigma);’. | | | |

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