# Patent

## Title
Localizing a temperature of a device for testing

## Abstract

Wafers or other structures comprising a plurality of dies or devices are tested at non-ambient temperatures by inducing a first heat flux through a substantial portion of a surface of the structure to modify a temperature of the structure and inducing a second heat flux through a local area of a surface of the structure, proximate the device under test, to modify the temperature the device under test.

## Background
CROSS-REFERENCE TO RELATED APPLICATIONS
This application claims the benefit of U.S. Provisional Application No. 60/579,751, filed Jun. 14, 2004.


BACKGROUND OF THE INVENTION
The present invention relates to probe stations adapted for measuring the performance of integrated circuits and other devices under varying temperature conditions.
Integrated circuits (ICs) are manufactured on semiconductor wafers that can include many individual devices or electronic circuits, known as dies. Individual dies are electrically tested with probes that are connected to test instruments and brought into contact with test pads on the die. This typically occurs at a probe station which includes a stage supporting a wafer chuck having a top surface on which a wafer can be restrained during probing. Typically, a vacuum system is connected to the chuck and selectively connectable through passages or tubes, internal to the chuck, to several openings in the top surface of the chuck. A wafer, resting on the top surface of the chuck and covering the openings, is secured by air pressure when a vacuum source is connected to the openings. The stage supporting the chuck is generally movable to position the wafer under one or more probes that can be brought into contact the test pads on the wafer. The test instrumentation applies predetermined electrical excitation through the probes to certain test points and senses the response of the respective circuit or device to the excitation.
Measuring performance under variable temperature conditions is a substantial component of IC performance testing. An IC may be tested at elevated or depressed temperatures to determine the potential effect on performance of operating the IC at its limits or using or storing an electronic device incorporating the IC in various environments. Typically, a thermal chuck is used to heat or cool the wafer in preparation for probe testing at a non-ambient temperature. The top surface of a thermal chuck typically comprises a thermal plate which is usually cast or fabricated from aluminum, another metal, or a non-metal that exhibits good thermal conductivity and dimensional stability over the range of temperatures at which testing will be performed. The simplest form of thermal chuck incorporates a heater element that heats the surface of the thermal plate supporting the wafer. Heaters can take several forms, such as plate heaters, coil heaters, mica heaters, thin film heaters, or heater rods incorporated into the chuck or cast into the chuck's structure. To cool the wafer to a temperature below the ambient temperature, a thermal chuck may also include passageways for the circulation of a cooled liquid or gas. On the other hand, thermal chucks may incorporate thermoelectric devices that can alternately heat or cool the wafer. The thermoelectric devices are based on the Peltier effect where heat is released or absorbed at a junction of two dissimilar semiconductors when current flows through the junction. Since the direction of heat flow at the junction is determined by the direction of current flow in the junction, by reversing the direction of current flow a single device can be used to, alternatively, heat or cool the chuck.
When a wafer or other structure to be tested is placed on a relatively hotter or colder surface of a thermal chuck, a heat flux is induced over a substantial portion of the contacting surfaces and heat is, respectively, absorbed from or conducted to the chuck. Heat transfer to or from the wafer continues, elevating or depressing the temperature of the wafer, until the temperatures of the contacting surfaces equalize. Once the mass of the wafer has obtained a stable temperature, testing can be performed on the individual circuits making up the wafer. While generalized heating and cooling of the mass of the wafer with a thermal chuck produces the elevated or depressed temperatures desired for various testing regimes, the process is time consuming because the mass of the chuck and the wafer must be heated or cooled to modify the temperature of the individual dies that are to be tested. What is desired, therefore, is a method and apparatus for reducing the time required to test individual dies of a wafer at temperatures above or below the ambient temperature.



BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a partial front view of an exemplary embodiment of a wafer probe station.
FIG. 2A is a top view of the wafer probe station of FIG. 1.
FIG. 2B is a partial top view of the wafer probe station of FIG. 1 with the enclosure door shown partially open.
FIG. 3A is a partially sectional and partially schematic front view of the probe station of FIG. 1.
FIG. 3B is an enlarged sectional view taken along line 3B-3B of FIG. 3.
FIG. 3B is an enlarged sectional view taken along line 3A-3A of FIG. 3A.
FIG. 4 is a top view of the sealing assembly where the motorized positioning mechanism extends through the bottom of the enclosure.
FIG. 5A is an enlarged top detail view taken along line 5A-5A of FIG. 1.
FIG. 5B is an enlarged top sectional view taken along line 5B-5B of FIG. 1.
FIG. 6 is a schematic illustration of an apparatus for probe testing a device proximate a locally heated area of a structure supported on a chuck in a probe station.
FIG. 7 is a schematic illustration of an apparatus for probe testing a device proximate a locally cooled area of a structure supported on a chuck in a probe station.
FIG. 8 is a schematic illustration of the underside of a thermal plate having a plurality of thermal devices for modifying the temperature of a thermal chuck.
FIG. 9 is an electrical schematic of a circuit for selectively energizing individual thermal devices of the thermal plate of FIG. 8.
FIG. 10 is a schematic illustration of a system for controlling localized heating of a wafer.
FIG. 11 is a flow diagram of a method for controlling localized heating of a wafer or other structure.



DETAILED DESCRIPTION OF THE INVENTION
Referring in detail to the drawings where similar parts of the invention are identified by like reference numerals, and referring in particular to FIGS. 1, 2 and 3; an exemplary embodiment of a probe station comprises a base 10 (shown partially) which supports a platen 12 through a number of jacks 14a, 14b, 14c, 14d which selectively raise and lower the platen vertically relative to the base by a small increment (approximately one-tenth of an inch). Also supported by the base 10 of the probe station is a motorized positioner 16 having a rectangular plunger 18 which supports a movable chuck assembly 20 for supporting a wafer or other structure to be tested. The chuck assembly 20 passes freely through a large aperture 22 in the platen 12 which permits the chuck assembly to be moved independently of the platen by the positioner 16 along X, Y and Z axes, i.e. horizontally along two mutually-perpendicular axes X and Y, and vertically along the Z axis. Likewise, the platen 12, when moved vertically by the jacks 14, moves independently of the chuck assembly 20 and the positioner 16.
Mounted atop the platen 12 are multiple individual probe positioners such as 24 (only one of which is shown), each having an extending member 26 to which is mounted a probe holder 28 which in turn supports a respective probe 30 for contacting wafers and other test devices mounted atop the chuck assembly 20. The probe positioner 24 has micrometer adjustments 34, 36 and 38 for adjusting the position of the probe holder 28, and thus the probe 30, along the X, Y and Z axes respectively, relative to the chuck assembly 20. The Z axis is exemplary of what is referred to herein loosely as the “axis of approach” between the probe holder 28 and the chuck assembly 20, although directions of approach which, are neither vertical nor linear, along which the probe tip and wafer or other test device are brought into contact with each other, are also intended to be included within the meaning of the term “axis of approach.” A further micrometer adjustment 40 adjustably tilts the probe holder 28 to adjust planarity of the probe with respect to the wafer or other test device supported by the chuck assembly 20. As many as twelve individual probe positioners 24, each supporting a respective probe, may be arranged on the platen 12 around the chuck assembly 20 so as to converge radially toward the chuck assembly similarly to the spokes of a wheel. With such an arrangement, each individual positioner 24 can independently adjust its respective probe in the X, Y and Z directions, while the jacks 14 can be actuated to raise or lower the platen 12 and thus all of the positioners 24 and their respective probes in unison.
An environment control outer enclosure is composed of an upper box portion 42 rigidly attached to the platen 12, and a lower box portion 44 rigidly attached to the base 10. Both portions are made of steel or other suitable electrically conductive material to provide EMI shielding. To accommodate the small vertical movement between the two box portions 42 and 44 when the jacks 14 are actuated to raise or lower the platen 12, an electrically conductive resilient foam gasket 46, preferably composed of silver or carbon-impregnated silicone, is interposed peripherally at their mating juncture at the front of the enclosure and between the lower portion 44 and the platen 12 so that an EMI, substantially hermetic, and light seal are all maintained despite relative vertical movement between the two box portions 42 and 44. Even though the upper box portion 42 is rigidly attached to the platen 12, a similar gasket 47 is preferably interposed between the portion 42 and the top of the platen to maximize sealing.
With reference to FIGS. 5A and 5B, the top of the upper box portion 42 comprises an octagonal steel box 48 having eight side panels such as 49a and 49b through which the extending members 26 of the respective probe positioners 24 can penetrate movably. Each panel comprises a hollow housing in which a respective sheet 50 of resilient foam, which may be similar to the above-identified gasket material, is placed. Slits such as 52 are partially cut vertically in the foam in alignment with slots 54 formed in the inner and outer surfaces of each panel housing, through which a respective extending member 26 of a respective probe positioner 24 can pass movably. The slitted foam permits X, Y and Z movement of the extending members 26 of each probe positioner, while maintaining the EMI, substantially hermetic, and light seal provided by the enclosure. In four of the panels, to enable a greater range of X and Y movement, the foam sheet 50 is sandwiched between a pair of steel plates 55 having slots 54 therein, such plates being slidable transversely within the panel housing through a range of movement encompassed by larger slots 56 in the inner and outer surfaces of the panel housing.
Atop the octagonal box 48, a circular viewing aperture 58 is provided, having a recessed circular transparent sealing window 60 therein. A bracket 62 holds an apertured sliding shutter 64 to selectively permit or prevent the passage of light through the window. A stereoscope (not shown) connected to a CRT monitor can be placed above the window to provide a magnified display of the wafer or other test device and the probe tip for proper probe placement during set-up or operation. Alternatively, the window 60 can be removed and a microscope lens (not shown) surrounded by a foam gasket can be inserted through the viewing aperture 58 with the foam providing EMI, hermetic and light sealing.
The upper box portion 42 of the environment control enclosure also includes a hinged steel door 68 which pivots outwardly about the pivot axis of a hinge 70 as shown in FIG. 2A. The hinge biases the door downwardly toward the top of the upper box portion 42 so that it forms a tight, overlapping, sliding peripheral seal 68a with the top of the upper box portion. When the door is open, and the chuck assembly 20 is moved by the positioner 16 beneath the door opening as shown in FIG. 2A, the chuck assembly is accessible for loading and unloading.
With reference to FIGS. 3 and 4, the sealing integrity of the enclosure is likewise maintained throughout positioning movements by the motorized positioner 16 due to the provision of a series of four sealing plates 72, 74, 76 and 78 stacked slidably atop one another. The sizes of the plates progress increasingly from the top to the bottom one, as do the respective sizes of the central apertures 72a, 74a, 76a and 78a formed in the respective plates 72, 74, 76 and 78, and the aperture 79a formed in the bottom 44a of the lower box portion 44. The central aperture 72a in the top plate 72 mates closely around the bearing housing 18a of the vertically-movable plunger 18. The next plate in the downward progression, plate 74, has an upwardly-projecting peripheral margin 74b which limits the extent to which the plate 72 can slide across the top of the plate 74. The central aperture 74a in the plate 74 is of a size to permit the positioner 16 to move the plunger 18 and its bearing housing 18a transversely along the X and Y axes until the edge of the top plate 72 abuts against the margin 74b of the plate 74. The size of the aperture 74a is, however, too small to be uncovered by the top plate 72 when such abutment occurs, and therefore a seal is maintained between the plates 72 and 74 regardless of the movement of the plunger 18 and its bearing housing along the X and Y axes. Further movement of the plunger 18 and bearing housing in the direction of abutment of the plate 72 with the margin 74b results in the sliding of the plate 74 toward the peripheral margin 76b of the next underlying plate 76. Again, the central aperture 76a in the plate 76 is large enough to permit abutment of the plate 74 with the margin 76b, but small enough to prevent the plate 74 from uncovering the aperture 76a, thereby likewise maintaining the seal between the plates 74 and 76. Still further movement of the plunger 18 and bearing housing in the same direction causes similar sliding of the plates 76 and 78 relative to their underlying plates into abutment with the margin 78b and the side of the box portion 44, respectively, without the apertures 78a and 79a becoming uncovered. This combination of sliding plates and central apertures of progressively increasing size permits a full range of movement of the plunger 18 along the X and Y axes by the positioner 16, while maintaining the enclosure in a sealed condition despite such positioning movement. The EMI sealing provided by this structure is effective even with respect to the electric motors of the positioner 16, since they are located below the sliding plates.
With particular reference to FIGS. 3 and 6, the chuck assembly 20 is of a modular construction. The plunger 18 supports an adjustment plate 79 which in turn supports first, second, and third chuck assembly elements 80, 81 and 83, respectively, positioned at progressively greater distances from the probe(s) along the axis of approach. The lower chuck assembly element 83 is a conductive rectangular stage or shield 83 which detachably mounts conductive elements 80 and 81 of circular shape. In addition to having a lower surface 160 and a peripheral surface 162, the upper chuck assembly element or thermal plate 80 has a planar upwardly-facing wafer-supporting or upper surface 82 having an array of vertical apertures 84 therein. These apertures communicate with respective chambers separated by O-rings 88, the chambers in turn being connected separately to different vacuum lines 90A, 90B, 90C (FIG. 6) communicating through separately-controlled vacuum valves (not shown) with a source of vacuum. The respective vacuum lines selectively connect the respective chambers and their apertures to the source of vacuum to hold the wafer, or alternatively isolate the apertures from the source of vacuum to release the wafer, in a conventional manner. The separate operability of the respective chambers and their corresponding apertures enables the chuck to hold wafers of different diameters.
In addition to the circular elements 80 and 81, an auxiliary chuck 92 is detachably mounted on the corners of the element 83 by screws (not shown) independently of the elements 80 and 81 for the purpose of supporting contact substrates and calibration substrates while a wafer or other test device is simultaneously supported by the element 80. The auxiliary chuck 92 has its own separate upwardly-facing planar surface 100 in parallel relationship to the surface 82 of the element 80. Vacuum apertures 104 protrude through the surfaces 100 and 102 from communication with respective chambers within the body of each auxiliary chuck. Each of these chambers in turn communicates through a separate vacuum line and a separate independently-actuated vacuum valve (not shown) with a source of vacuum, each such valve selectively connecting or isolating the respective sets of apertures 104 with respect to the source of vacuum independently of the operation of the apertures 84 of the element 80, so as to selectively hold or release a contact substrate or calibration substrate located on the surface 100 independently of the wafer or other test structure. An optional metal shield 106 may protrude upwardly from the edges of the element 83 to surround or skirt the other elements 80, 81 and the auxiliary chuck 92.
All of the chuck assembly elements 80, 81 and 83, as well as the additional chuck assembly element 79, are electrically insulated from one another even though they are constructed of electrically conductive metal and interconnected detachably by metallic screws such as 96. With reference to FIGS. 3 and 3A, the electrical insulation results from the fact that dielectric spacers 85 and dielectric washers 86 are provided. These, coupled with the fact that the screws 96 pass through oversized apertures in the lower one of the two elements which each screw joins together thereby preventing electrical contact between the shank of the screw and the lower element, provide the desired insulation. Preferably the spacers and washers 85 and 86, respectively, are constructed of a material having a low dielectric constant, high dimensional stability, and high volume resistivity. A suitable material for the spacers and washers is glass epoxy, or acetal homopolymer marketed under the trademark Delrin by E. I. DuPont.
Referring to FIG. 6, a semiconductor wafer or other structure 150 comprising a plurality of dies or other devices 152 to be tested is supported on the top surface 82 of the thermal chuck 20 in preparation for probe testing at a non-ambient temperature. A wafer 150 typically includes many individual dies 152 or chips, each comprising an individual integrated circuit or discrete semiconductor device. The performance of an individual die or device under test (DUT) is tested by bringing the probes 30 into contact with test pads that are connected to the circuit or device comprising the die. The probes 30 are connected to instrumentation that applies a known excitation, through the probes, to certain test pads and measures the resulting response of the circuit or device to the excitation. While the probes 30 commonly are used to sense parameters related to electrical output resulting from electrical excitation of the circuitry of a die on wafer, the probes may be used to detect other outputs, such as light emission, and apply non-electrical excitation, such as light or other forms of radiation, to devices 152 or dies of suitable structures and the terms wafer and structure are used interchangeably herein to refer to a structure including one or more individual dies or devices to be tested.
To test the performance of a DUT, for example device 166 at a non-ambient temperature, thermal devices 154 in the chuck 20 are operated to alter the temperature of the top surface 82 of the chuck. The thermal devices 154 may be heat sources, such as plate heaters, coil heaters, mica heaters, thin film heaters or heater rods, supplying heat to elevate the temperature of the upper surface 82 of the chuck 20. On the other hand, the thermal devices 154 may be heat sinks, such as heat pipes or passages for the circulation of cooled liquid or gas, absorbing heat and depressing the temperature of the surface 82 of the chuck 20 to enable testing at temperatures below the ambient temperature. In the exemplary thermal chuck 20, the thermal devices 154 are preferably thermoelectric devices comprising a plurality of electrically connected thermocouples of p- and n-type semiconductor material sandwiched between two plates of electrically insulating, thermally conducting material. When DC power is applied to the semiconductor junctions comprising the thermocouples, heat is transferred from one plate to the other as a result of the Peltier effect. As electrons move from the p-type material to the n-type material through an electrical connection, the electrons jump to a higher energy state, absorbing thermal energy at the cold side plate. Continuing through the material, the electrons flow from the n-type material to the p-type material and drop to a lower energy state releasing energy as heat to the hot side plate. The thermoelectric device functions as a bi-directional heat pump because the direction of heat flow is reversible by reversing the direction of current flow in the semiconductor junctions. Exposing the top surface 82 of chuck 20 to the warmer or cooler plate of the thermoelectric devices 154 will, respectively, heat or cool the upper surface and, thereby, the wafer or other structure 150 supported on the surface.
A difference in temperature between the contacting surfaces of the wafer 150 and the chuck 20 induces a heat flux causing heat to be conducted through a substantial portion of the area of the surface of the wafer in contact with the chuck. If the surface 82 of the chuck 20 is cooler than the surface 156 of the wafer 150, the heat flux is negative or out of the wafer with the chuck sinking heat to cool the wafer. On the other hand, if the surface 82 of the chuck 20 is warmer than the contacting surface 156 of the wafer 150, the chuck is a heat source and the heat flux is positive or into the surface of the wafer increasing the temperature of the wafer's mass. Heat is transferred into or out of the wafer until the temperatures of the contacting surfaces of the wafer 150 and the chuck 20 substantially equalize. Once the temperature of the wafer has stabilized, the probes 30 can be brought into contact with the test pads on the DUT 166 and testing can begin.
While thermal chucks can be used to heat or cool wafers or other structures for testing over a wide range of temperatures, probe testing at elevated or depressed temperatures is a slow process because the mass of the entire wafer must be heated or cooled to the test temperature to stabilize the temperature of the DUT at the desired testing temperature. In addition to reducing the productivity of the probe station, the relatively long time required to bring the temperature of the wafer or other structure to the desired testing temperature prevents testing the DUT under conditions of rapidly changing temperatures. Further, the temperature varies over the surface of the thermal chuck and, since heat from the chuck is transferred through a surface of the structure in contact with the chuck and probing is typically performed on the opposing surface of the structure, it is difficult to accurately determine the testing temperature of the particular DUT being probed. The inventor concluded that the time required to perform probe testing at non-ambient temperatures could be significantly reduced and the accuracy of the testing improved by inducing a heat flux over a relatively small local area of the wafer that includes or is proximate to the device under test.
To heat a local area of a wafer or other structure 150, the probe station includes a laser 160A attached to the corner of the box 42 and an optical fiber 162A to direct the light beam to an area 164 of the wafer proximate the die or other device under test 166. While an optical fiber can be used to direct the laser's beam to the wafer 150, the laser could be focused directly on a local area 164 proximate the DUT 166, or indirectly through a lens system. By selecting an appropriate optical lens, the local area illuminated and heated by the laser's beam can vary from a substantial portion of the surface area of the wafer 150 to approximately the area of a die 152. A CO2 laser can be used to heat semiconductor wafers of silicon. The photons produced by a CO2 laser have a 10.6 micron wavelength and are absorbed by a multi-phonon interaction with silicon, but have insufficient energy to cause electronic transitions in the material. Lasers based on other materials may be also used for localized heating of silicon or other materials comprising the structure to be tested.
Radiation incident on a surface is either transmitted, absorbed, or reflected. The net energy available for local heating from a radiantly illuminated area equals the difference between the rate of heat input and the rate at which is conducted way, or:




  
    
      
        
          
            d
            
              Q
              h
            
          
          
            d
            t
          
        
        =
        
          
            
              d
              
                Q
                a
              
            
            
              d
              t
            
          
          -
          
            
              d
              
                Q
                c
              
            
            
              d
              t
            
          
        
      
    
    
      
        (
        1
        )
      
    
  




where: Qh=net energy available for heating

    
    
        Qa=energy absorbed
        Qc=energy conducted away for the illuminated area

For a time interval Δt:

    
    






  
    
      
        
          
            Δ
            ⁢
            
              
            
            ⁢
            
              Q
              h
            
          
          
            Δ
            ⁢
            
              
            
            ⁢
            t
          
        
        =
        
          mC
          ⁢
          
            
          
          ⁢
          
            
              Δ
              ⁢
              
                
              
              ⁢
              T
            
            
              Δ
              ⁢
              
                
              
              ⁢
              t
            
          
        
      
    
    
      
        (
        2
        )
      
    
  




where: m=mass of the heated area

    
    
        C=the specific heat of the material
        ΔT=temperature rise resulting from net energy input
    
    






  
    
      
        
          
            Δ
            ⁢
            
              
            
            ⁢
            
              Q
              a
            
          
          
            Δ
            ⁢
            
              
            
            ⁢
            t
          
        
        =
        
          α
          ⁢
          
            
          
          ⁢
          π
          ⁢
          
            
          
          ⁢
          
            r
            2
          
          ⁢
          
            
          
          ⁢
          
            
              Δ
              ⁢
              
                
              
              ⁢
              
                E
                i
              
            
            
              Δ
              ⁢
              
                
              
              ⁢
              t
            
          
        
      
    
    
      
        (
        3
        )
      
    
  




where: r=radius of the heated area

    
    
        α=absorption coefficient
        ΔEi=incident energy per unit area in the time interval

Conduction perpendicular to the surface over the interval Δt equals:

    
    






  
    
      
        
          
            Δ
            ⁢
            
              
            
            ⁢
            Qc
          
          
            Δ
            ⁢
            
              
            
            ⁢
            t
          
        
        =
        
          
            -
            
              k
              z
            
          
          ⁢
          
            
          
          ⁢
          π
          ⁢
          
            
          
          ⁢
          
            r
            2
          
          ⁢
          
            
          
          ⁢
          
            
              Δ
              ⁢
              
                
              
              ⁢
              T
            
            
              Δ
              ⁢
              
                
              
              ⁢
              z
            
          
        
      
    
    
      
        (
        4
        )
      
    
  




where: ka=thermal conductivity of the structure in the z direction
For conduction radially away from the illuminated area:




  
    
      
        
          
            Δ
            ⁢
            
              
            
            ⁢
            
              Q
              c
            
          
          
            Δ
            ⁢
            
              
            
            ⁢
            t
          
        
        =
        
          
            -
            2
          
          ⁢
          
            
          
          ⁢
          
            k
            r
          
          ⁢
          
            
          
          ⁢
          π
          ⁢
          
            
          
          ⁢
          rp
          ⁢
          
            
          
          ⁢
          
            
              Δ
              ⁢
              
                
              
              ⁢
              T
            
            
              Δ
              ⁢
              
                
              
              ⁢
              r
            
          
        
      
    
    
      
        (
        5
        )
      
    
  




where: kr=thermal conductivity in the r direction

    
    
        p=penetration depth within which the radiation is absorbed

The temperature increase for a local area of the a silicon wafer can be estimated from equations 1-5. For a 1 mm thick wafer illuminated by a laser pulse having energy of 1 J/cm2, a time duration of 10 μs and producing a temperature rise of 200° K., the conduction vertical to the surface equals:

    
    






  
    
      Δ
      ⁢
      
        
      
      ⁢
      Qc
    
    
      Δ
      ⁢
      
        
      
      ⁢
      t
    
  
  =
  
    
      
        -
        
          k
          z
        
      
      ⁢
      π
      ⁢
      
        
      
      ⁢
      
        r
        2
      
      ⁢
      
        
      
      ⁢
      
        
          Δ
          ⁢
          
            
          
          ⁢
          T
        
        
          Δ
          ⁢
          
            
          
          ⁢
          z
        
      
    
    =
    
      0.0296
      ⁢
      
        
      
      ⁢
      π
      ⁢
      
        
      
      ⁢
      
        r
        2
      
    
  




where: kz=1.48 W/cm ° K.

    
    
        ρ=2.33 g/cm3 
        C=0.71 J/g ° K.
        α=0.2 (estimated)

Conduction radially about the illuminated area is assumed to be much smaller than conduction vertically through the wafer and radial conduction can be neglected. The rate of heat input in the time interval, Δt, equals:

ΔQa=απr2ΔEi=0.2πr2

Since the energy absorbed (ΔQa) is much greater than the energy conducted away from the illuminated area (ΔQc) the conduction loss can be ignored and the net energy available for heat (ΔQh) equated to the rate of heat input (ΔQa). Therefore:

    
    






  
    Δ
    ⁢
    
      
    
    ⁢
    T
  
  =
  
    
      
        Δ
        ⁢
        
          
        
        ⁢
        
          Q
          h
        
      
      mC
    
    =
    
      
        
          Δ
          ⁢
          
            
          
          ⁢
          
            Q
            h
          
        
        
          ρ
          ⁢
          
            
          
          ⁢
          π
          ⁢
          
            
          
          ⁢
          
            r
            2
          
          ⁢
          
            
          
          ⁢
          pC
        
      
      =
      
        
          
            0.2
            ⁢
            
              
            
            ⁢
            π
            ⁢
            
              
            
            ⁢
            
              r
              2
            
          
          
            2.33
            ⁢
            
              
            
            ⁢
            π
            ⁢
            
              
            
            ⁢
            
              
                r
                2
              
              ⁡
              
                (
                0.1
                )
              
            
            ⁢
            
              (
              0.71
              )
            
          
        
        ≈
        
          1.21
          ⁢
          °
          ⁢
          
            
          
          ⁢
          K
        
      
    
  




Since the estimated energy absorbed is directly proportional to the energy output of the laser, increasing the energy of the laser pulse to 100 J/cm2 would be sufficient to increase the temperature of the wafer in the area illuminated by the laser by approximately 120° K. Carbon dioxide lasers with power levels many times this level are available and a laser with modest energy output can rapidly heat a small area of the wafer 150 or other structure. Coordinated pulsing of the laser to heat a local area 164 of the wafer followed by probing of the dies, proximate the heated area, can significantly improve the productivity of the probe station when testing at non-ambient temperatures. Pulsed energy input can also be used to cyclically heat an area for testing under dynamic temperature conditions.
Localized heating of a suitable DUT could be accomplished with a radiant heater, such as a resistance heater or thin film heater that can be positioned adjacent to the DUT, or by a suitably focused electron beam if electrical interference with the operation of the tested device or instrumentation is not an issue.
Determining and controlling the temperature of a DUT heated or cooled by a thermal chuck is difficult. Typically, the temperatures, across the wafer supporting surface, vary from approximately 1° C.-3° C. depending upon the temperature of the chuck. In addition, the temperature of the wafer supporting surface is controlled by varying the output of the thermal devices in the chuck in response to the sensing of a temperature of the chuck's structure. Since the temperature of the wafer is controlled by controlling the temperature of the chuck and since the heat flux is applied or sunk at the lower surface of the wafer, while probing occurs on the upper surface of the wafer, it is difficult to control or determine the temperature of the DUT during testing.
The probe station includes an infrared temperature measurement system to measure the temperature of the area of localized heating or cooling. The infrared temperature measurement system is a non-contact temperature measuring system comprising a sensing head 170, including circuitry to output a digital signal, and a computer 172 to process the signals output by the sensing head. The wafer 150 emits infrared radiation, known as characteristic radiation, with a wavelength ranging from 0.7 to 1000 μm and an intensity that varies according to temperature. The sensing head of the infrared temperature measuring system responds to the intensity of the infrared radiation emitted by a spot or area of a surface that is optically visible to the sensing head. The sensing head 170 is focused on the area of localized heating 164 and outputs a signal to a computer 172 corresponding to the sensed temperature of the local area. Infrared radiation behaves according to known optical principles and can be directed to the sensing head by deflection and focusing with a lens or optical fiber or reflection from reflective surfaces, if the locally heated area is not directly visible, optically, from a convenient location for the sensing head. The computer 172 that processes the signals from the sensing heat 170 of infrared temperature measuring system also controls the laser 160A providing localized heating of the wafer. The computer 172 will pulse the laser at different rates and for different intervals in response to temperature signals generated by the infrared temperature measurement system to control of the temperature of the area of localized heating. Since the infrared temperature measurement system measures the temperature of the surface on which probing is to take place adjacent to the DUT, the temperature of the DUT can be precisely determined and controlled. The computer 172 can also repeatedly energize the laser 160A to enable thermal cycling of the DUT 166.
Referring in particular to FIGS. 10 and 11, the response of a DUT can also be used to control the temperature of the area of localized heating or cooling. The resistance of a semiconductor junction and other circuit elements varies directly with the temperature of the die. If a constant voltage is applied to a semiconductor junction, the current flow through the junction will decrease as the temperature of the junction increases. Likewise, if a constant current is flowing through a junction, the voltage drop through the junction will respond directly to a change in temperature of the junction. By calibrating the response of the circuitry of a DUT to changes in temperature and periodically exciting the circuit with a constant voltage or current, the probing system can determine whether additional heating or cooling is required to bring the local area of the wafer proximate the DUT to a stable test temperature.
A source of a heat flux, for example a laser 302, is focused on a local area of a wafer 150 proximate a DUT 166. A computer 172 controls the operation of the source of heat flux and, therefore, the energy applied to or sunk from the local area of the wafer. A source 304 is connectable to the probes 306, 308 and provides either a constant voltage or a constant current to excite the circuitry of the DUT 166 when the temperature is to be measured 320. The initial response of the DUT 166 to the excitation 322 is determined by the output instrument 310 and input to the computer 172. The computer then energizes the laser 302 to induce a heat flux through the surface of the wafer 150 at the area of localized heating 324. After the laser 302 has been energized, the computer 172 connects the source 304 to the DUT 326 and measures the response of the DUT to the input excitation 328. The arithmetic logic unit of the computer 172 calculates the change in response of the DUT 330 as a result of the temporally successive excitation of the DUT. The computer 172 compares the change in response of the DUT to a table of values calibrating a change in response of a DUT to a change in temperature to determine if additional heat flux should be applied to the wafer. If the temperature has not stabilized at the test temperature, the computer energizes the source of heat flux 324 or signals the thermal chuck control 312 to energize the thermal devices of the thermal chuck 20 to further alter the temperature of the local area 324. If additional heat flux is not required 332, the system waits for a predetermined period 334 before again exciting the DUT 326, and measuring the response of the DUT 328. The computer 172 adjusts the output of source of heat flux to control and stabilize the temperature of the DUT at the testing temperature until the probing is complete 336.
The thermal chuck 20 can be used induce a heat flux through a substantial portion of the surface of the wafer or other structure 150 contacting the chuck to provide generalized temperature modification to the structure to reduce thermal stress arising from localized heating or cooling of the structure. However, since thermal stresses are substantially proportional to temperature differences in the structure 150, it is not necessary to heat or cool the entire mass of the structure to the test temperature to avoid damaging thermal stresses. Since the mass of the structure 150 need not be heated or cooled to test temperature, less heat must be absorbed or emitted by the structure before testing can begin. As a result, the productivity of the probe station is substantially increased by providing two sources of heat flux for the structure being tested; one inducing a heat flux to heat or cool a local area of the structure adjacent to the DUT to elevate or depress the temperature of the particular device or die to the proper testing temperature and the second, a generalized source, modifying the temperature of the mass of the structure to a more moderate temperature than the testing temperature by inducing heating or cooling through a substantial portion of the surface area of the structure in contact with the chuck.
Temperature localization can also be used when testing devices at depressed temperatures. The thermal chuck 20 is equipped with thermal electric devices can be used to cool the wafer or other structure 150 that includes the DUT 166. Reversing the flow of current in the thermoelectric devices will reverse the direction of heat flow in the device cooling the upper surface 82 of the chuck 20 and producing a negative heat flux at the surface 156 of the structure 150 in contact with the chuck. Referring to FIG. 7, a second embodiment of the probe station includes a tube 180, affixed to and penetrating the box 42, that is attached to a valve 182 controlling a flow of refrigerated gas from a source 184. The refrigerated gas is typically compressed air that is cooled by a heat pump which may comprise a plurality of thermoelectric devices. The compressed refrigerated gas flows through the control valve 182 and the tube 180 which is arranged to direct the refrigerated gas at a local area 186 of the wafer 150 or other structure restrained on the surface of the chuck 20. The refrigerated gas impinges on a local area 186 of structure 150 and induces a negative heat flux through the upper surface of the structure to further cool the structure proximate to a particular DUT, for example, die 166. The computer 172 responds to temperature signals from the temperature sensing head 170 and operates the control valve 182 to control the flow of refrigerant and the temperature of the area of localized cooling.
Combining a generalized heat sink for the wafer 150 or other structure and localized heating for the DUT 166, can be used to improve temperature accuracy when testing at low temperatures or to thermally cycle a DUT. Operating the thermal chuck 20 as a heat sink can be used to depress the temperature of the wafer 150 or other structure to a temperature below the test temperature. The local area proximate the DUT 166 can then be heated with the laser 160A or other local heat source to an accurate test temperature that is cooler than the ambient temperature. Cycling the heat flux induced by the local heat source can cause fluctuation in the temperature of the DUT 166, even though the temperature of the DUT remains below the ambient temperature.
A thermal chuck 20 including heating elements can also be used in combination with localized cooling to test thermal effects of cooling a heated die or device.
Heating and cooling a localized area of a wafer or other structure 150 can also be accomplished with a thermal chuck comprising a plurality of individually operable thermal devices. Referring to FIG. 8, the upper element or thermal plate 80 of the chuck 20 includes a plurality of thermal devices 154. Preferably, the thermal devices 154 are thermoelectric devices that can, alternately, cool or heat the top surface 82 of the thermal chuck by reversing the direction of current flow in the device. However, the thermal devices could comprise resistance heaters or other devices. Referring to FIG. 9, resistive thermal devices 254, 256, 258 are individually connectable, through transistors 202, 204; 206, 208; 210, 212, respectively, to one of the power sources 214, 216, represented schematically as batteries of differing voltages. By energizing, the appropriate transistor of each pair of transistors 202, 204; 206, 208; 210, 212, one or more of the thermal devices 254, 256, 258 is operable at a first voltage producing a first heat flux while other thermal devices are operated at another voltage producing a second heat flux. As a result, an area of the top surface 82 of the chuck 20 can be the source of a first heat flux through a substantial portion of the surface 156 of the wafer or other structure 150 in contact with the chuck. A second heat flux, produced by one or more thermal devices 154 operating at a second voltage, can be induced in a local area of the surface 156 of the wafer 150 that is proximate the DUT 166 to produce a temperature in the DUT that is different than the temperature of a substantial portion of the wafer's mass. The size and location of the area subjected to localized heating or cooling can be varied by altering the numbers and locations of the thermal devices connected to each of the respective power sources. By connecting appropriate thermal devices to appropriate power supplies, the percentage of the surface area of the wafer that is subjected to localized heating or cooling may be varied. Between 10% and 75% of the surface area of the chuck can be heated to the local area temperature and, if the DUT occupies a sufficiently large portion of the surface of the wafer or other structure or if the thermal devices are sufficiently small, the local heating area may approximate the area occupied by a single die 152 or device.
The detailed description, above, sets forth numerous specific details to provide a thorough understanding of the present invention. However, those skilled in the art will appreciate that the present invention may be practiced without these specific details. In other instances, well known methods, procedures, components, and circuitry have not been described in detail to avoid obscuring the present invention.
All the references cited herein are incorporated by reference.
The terms and expressions that have been employed in the foregoing specification are used as terms of description and not of limitation, and there is no intention, in the use of such terms and expressions, of excluding equivalents of the features shown and described or portions thereof, it being recognized that the scope of the invention is defined and limited only by the claims that follow.

## Claims

1. A method of testing a device at a target temperature, said device being one of a plurality of devices included on a structure having at least one structure surface with a structure surface area, said method comprising the steps of:
(a) inducing a first heat flux through a structure surface over a substantial portion of said structure surface area;
(b) inducing a second heat flux through a surface of a local area of said structure, said local area being smaller than, and within, said structure surface area and proximate said device to be tested;
(c) sensing the temperature of said local area of said structure while said first heat flux and said second heat flux are induced through said surface;
(d) varying said second heat flux in response to the sensed said temperature of said local area so as to achieve said target temperature at said device to be tested; and
(e) measuring a performance parameter for said device at said target temperature.

2. The method of testing a device of claim 1 wherein said performance parameter is measured by at least one probe contacting said device to be tested.

3. The method of testing a device of claim 2 wherein said second heat flux is induced into said structure.

4. The method of testing a device of claim 2 wherein said second heat flux is induced out of said structure.

5. The method of testing a device of claim 1 wherein said second heat flux is provided by a laser that is pulsed over different intervals in response to the sensed said temperature of said local area.

6. The method of claim 5 wherein said target temperature at said device varies with time.

7. The method of testing a device of claim 6 wherein said target temperature varies cyclically with time.

8. The method of testing a device of claim 1 wherein said local area comprises less than seventy five percent of said structure surface area.

9. The method of testing a device of claim 1 wherein said local area comprises less than fifty percent of said structure surface area.

10. The method of testing a device of claim 1 wherein said local area comprises less than twenty five percent of said structure surface area.

11. The method of testing a device of claim 1 wherein said local area comprises less than ten percent of said structure surface area.

12. The method of testing a device of claim 1 wherein said local area approximates a device area of said device.

13. The method of testing a device of claim 1 further comprising varying said first heat flux in response to the sensed said temperature of said local area so as to achieve said target temperature at said device to be tested.

14. The method of testing a device of claim 1 wherein the step of sensing a temperature of said local area of said structure comprises the steps of:
(a) exciting said device;
(b) measuring a first response of said device to said excitation;
(c) inducing a heat flux through a surface of said local area;
(d) measuring a second response of said device to said excitation following said inducement of said heat flux through said surface of said local area; and
(e) inducing additional heat flux through said surface of said local area if said second response of said device has a predetermined relationship to said first response.

15. The method of testing a device of claim 14 wherein step of exciting said device comprises an application of a constant voltage to said device.

16. The method of testing a device of claim 14 wherein step of exciting said device comprises an application of a constant current to said device.

17. An apparatus for testing a device at a temperature, said device being one of a plurality of devices included on a structure having at least one structure surface with a structure surface area, said apparatus comprising:
(a) a first heat flux origin inducing a first heat flux through a structure surface over a substantial portion of said structure surface area;
(b) a second heat flux origin inducing a second heat flux through a local area of a structure surface, said local area being smaller than said structure surface area and proximate said device to be tested;
(c) a probe for measuring a performance parameter of said device by contacting a test pad on a surface of said device;
(d) a temperature sensor sensing a temperature of said local area wherein said temperature sensor comprises:
(ii) a source of excitation connectable to said device;
(ii) an output instrument to measure a response of said device to excitation by said source;
(iii) an arithmetic device to determine a difference between a first response from said output instrument and a temporally successive second response from said output instrument; and
(iv) a comparator to compare said difference to a value that calibrates a response of said output instrument to a temperature of said device; and

(e) a control responding to said sensed temperature of said local area to vary at least one of said first heat flux and said second heat flux.

18. The apparatus for testing a device of claim 17 wherein said first heat flux origin is a heat source.

19. The apparatus for testing a device of claim 18 wherein said second heat flux origin is a heat source.

20. The apparatus for testing a device of claim 18 wherein said second heat flux origin is a heat sink.

21. The apparatus for testing a device of claim 17 wherein said first heat flux origin is a heat sink.

22. The apparatus for testing a device of claim 21 wherein said second heat flux origin is a heat source.

23. The apparatus for testing a device of claim 21 wherein said second heat flux origin is a heat sink.

24. The apparatus for testing a device of claim 17 wherein said second heat flux origin induces said second heat flux through said local area comprising less than seventy five percent of said structure surface area.

25. The apparatus for testing a device of claim 17 wherein said second heat flux origin induces said second heat flux through said local area comprising less than fifty percent of said structure surface area.

26. The apparatus for testing a device of claim 17 wherein said second heat flux origin induces said second heat flux through said local area comprising less than twenty five percent of said structure surface area.

27. The apparatus for testing a device of claim 17 wherein said second heat flux origin induces said second heat flux through said local area comprising less than ten percent of said structure surface area.

28. The apparatus for testing a device of claim 17 wherein said second heat flux origin induces said second heat flux through said local area approximating a device area of said device.

29. The apparatus for testing a device of claim 17 wherein said first heat flux origin comprises a thermal chuck.

30. The apparatus for testing a device of claim 17 wherein said second heat flux origin comprises an optical source.

31. The apparatus for testing a device of claim 30 wherein said optical source comprises a laser.

32. The apparatus for testing a device of claim 30 where said optical source comprises a carbon dioxide laser.

33. The apparatus for testing a device of claim 17 wherein said control responds to said sensed temperature by varying a pulse produced by said second heat flux origin.

34. The apparatus for testing a device of claim 17 wherein said temperature sensor comprises an infrared radiation sensor.

35. The apparatus for testing a device of claim 17 wherein said source of excitation comprises a voltage source.

36. The apparatus for testing a device of claim 17 wherein said source of excitation comprises a current source.