# Patent

## Title
Phase change memory device and manufacturing method

## Abstract

A phase change memory device comprises a photolithographically formed phase change memory cell having first and second electrodes and a phase change element positioned between and electrically coupling the opposed contact elements of the electrodes to one another. The phase change element has a width, a length and a thickness. The length, the thickness and the width are less than a minimum photolithographic feature size of the process used to form the phase change memory cell. The size of the photoresist masks used in forming the memory cell may be reduced so that the length and the width of the phase change element are each less than the minimum photolithographic feature size.

## Background
CROSS REFERENCE TO RELATED APPLICATIONS
This application claims the benefit of U.S. provisional patent application No. 60/758,784, filed 13 Jan. 2006, titled Phase Change Memory Device And Manufacturing Method. This application is a continuation in part of U.S. patent application Ser. No. 11/459,106, filed 21 Jul. 2006, which application claims the benefit of provisional patent application No. 60/736,722 filed 15 Nov. 2005, titled Phase Change Memory Device And Manufacturing Method.


BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to high density memory devices based on phase change based memory materials, including chalcogenide based materials and other materials, and to methods for manufacturing such devices.
2. Description of Related Art
Phase change based memory materials are widely used in read-write optical disks. These materials have at least two solid phases, including for example a generally amorphous solid phase and a generally crystalline solid phase. Laser pulses are used in read-write optical disks to switch between phases and to read the optical properties of the material after the phase change.
Phase change based memory materials, like chalcogenide based materials and similar materials, also can be caused to change phase by application of electrical current at levels suitable for implementation in integrated circuits. The generally amorphous state is characterized by higher resistivity than the generally crystalline state, which can be readily sensed to indicate data. These properties have generated interest in using programmable resistive material to form nonvolatile memory circuits, which can be read and written with random access.
The change from the amorphous to the crystalline state is generally a lower current operation. The change from crystalline to amorphous, referred to as reset herein, is generally a higher current operation, which includes a short high current density pulse to melt or break down the crystalline structure, after which the phase change material cools quickly, quenching the phase change process, allowing at least a portion of the phase change structure to stabilize in the amorphous state. It is desirable to minimize the magnitude of the reset current used to cause transition of phase change material from crystalline state to amorphous state. The magnitude of the reset current needed for reset can be reduced by reducing the size of the phase change material element in the cell and of the contact area between electrodes and the phase change material, so that higher current densities are achieved with small absolute current values through the phase change material element.
One direction of development has been toward forming small pores in an integrated circuit structure, and using small quantities of programmable resistive material to fill the small pores. Patents illustrating development toward small pores include: Ovshinsky, “Multibit Single Cell Memory Element Having Tapered Contact,” U.S. Pat. No. 5,687,112, issued Nov. 11, 1997; Zahorik et al., “Method of Making Chalogenide [sic] Memory Device,” U.S. Pat. No. 5,789,277, issued Aug. 4, 1998; Doan et al., “Controllable Ovonic Phase-Change Semiconductor Memory Device and Methods of Fabricating the Same,” U.S. Pat. No. 6,150,253, issued Nov. 21, 2000.
Problems have arisen in manufacturing such devices with very small dimensions, and with variations in process that meet tight specifications needed for large-scale memory devices. It is desirable therefore to provide a memory cell structure having small dimensions and low reset currents, and a method for manufacturing such structure.
SUMMARY OF THE INVENTION
A first aspect of the invention is directed to a phase change memory device comprising a memory cell access layer and a memory cell layer, operably coupled to the memory cell access layer, comprising a lithographically formed phase change memory cell. The memory cell comprises first and second electrodes, having first and second opposed, spaced apart contact elements, and a phase change element positioned between the first and second contact elements and electrically coupling the first and second contact elements to one another. The phase change element has a width, a length and a thickness, the length measured between the first and second contact elements and the width measured perpendicular to the length. The length, the thickness and the width are less than a minimum photolithographic feature size of the process used to form the phase change memory cell. In some embodiments the minimum lithographic feature size is about 200 nm, the length is about 10 to 100 nm, the width is about 10 to 50 nm, and the thickness is about 10 to 50 nm.
A second aspect of the invention is directed to a method for making a phase change memory device. A memory cell access layer is formed on a substrate, the memory cell access layer comprising an access device and a top surface. A memory cell layer is formed and is operably coupled to the memory cell access layer, the memory cell layer comprising a lithographically formed phase change memory cell. The memory cell comprises first and second electrodes, having first and second opposed, spaced apart contact elements, and a phase change element positioned between the first and second contact elements and electrically coupling the first and second contact elements to one another. The phase change element has a width, a length and a thickness. The memory layer forming step comprises reducing the size of photoresist masks used in the memory layer forming step so that the length and the width of the phase change element are each less than a minimum lithographic feature size of the process used to form the phase change memory cell.
The method described herein for formation of the phase change element, for use in a memory cell in a phase change read only memory (PCRAM) device, can be used to make small phase change gates, bridges or similar structures for other devices.
Various features and advantages of the invention will appear from the following description in which the preferred embodiments have been set forth in detail in conjunction with the accompanying drawings.



BRIEF DESCRIPTION OF THE DRAWINGS
FIGS. 1 and 2 are a simplified isometric view and a simplified cross-sectional view of the components of a phase change memory device made according to the invention;
FIGS. 3-25 illustrate a method for making phase change memory devices, such as the device of FIGS. 1 and 2;
FIGS. 3 and 4 illustrate the final stages for making the memory cell access layer of FIG. 2;
FIG. 4A illustrates an alternative embodiment of the memory cell access layer of FIG. 4;
FIG. 5 illustrates the deposition of a phase change material layer and a first barrier layer on top of the memory cell access layer of FIG. 4;
FIGS. 6 and 7 are side and top views showing a first photoresist mask on the first barrier layer;
FIGS. 8 and 9 illustrate the result of trimming the mask of FIGS. 6 and 7;
FIGS. 10 and 11 show the result of etching the first barrier layer of FIG. 8 followed by the removal of the mask of FIG. 8;
FIG. 12 shows the structure of FIG. 10 following etching of the phase change material layer;
FIG. 13 is a cross-sectional view taken a long line 13-13 of FIG. 12;
FIG. 13A is a cross-sectional view similar to that of FIG. 13 of alternative embodiment after sidewall etching of the phase change element;
FIG. 13B shows the structure of FIG. 13A after deposition of a barrier layer forming voids adjacent to the phase change element;
FIGS. 14 and 15 illustrates a result of several processing steps to create three open regions defined by a second photoresist mask;
FIG. 16 illustrates the result of an oxide etching step through the open regions;
FIG. 17 illustrates the structure of FIG. 16 following removal of the mask;
FIGS. 18 and 19 show the result of a sidewall trimming step;
FIG. 20 shows the result of etching through the phase change element structure of FIG. 18;
FIG. 21 shows the structure of FIG. 20 after deposition of an electrical contact enhancement layer followed by deposition of an electrical conductor;
FIGS. 22 and 22A show the structure of FIG. 1 after a chemical mechanical polishing step;
FIGS. 22B and 22C show alternative embodiments of the structure of FIG. 22 in which a layer of phase change material is used to help thermally isolate the phase change elements from the electrodes;
FIG. 23 illustrates a second separation layer applied onto the structure of FIG. 22;
FIGS. 24 and 25 are side and top views showing a plug passing through a via within the second separation layer;
FIGS. 26-38 illustrates the steps used in making an alternative embodiment of the invention with FIG. 26 showing structure similar to that of FIG. 5 but including separation layers above and below the phase change material layer;
FIG. 27 shows a mask deposited on the structure of FIG. 26;
FIG. 28 shows the mask of FIG. 27 trimmed;
FIG. 29 is similar to FIG. 10 and shows a result of etching followed by the removal of the mask of FIG. 28;
FIG. 30 shows the result of another etching step followed by the removal of the etched barrier layer of FIG. 29;
FIG. 31 shows the deposition of a barrier layer over the structure of FIG. 30;
FIG. 32 shows the formation of a mask on the structure of FIG. 31;
FIG. 33 shows the result of etching followed by the removal of the mask of FIG. 32;
FIG. 34 shows result of stacked etching the material below the open regions of FIG. 33 down to the top surface of the memory cell access layer;
FIG. 35 illustrates result of the deposition of an electrical contact enhancement layer onto the structure of FIG. 34;
FIG. 36 shows the structure of FIG. 35 after a chemical mechanical polishing step;
FIG. 37 shows the deposition of a separation layer onto the structure of FIG. 36; and
FIG. 38 shows the result of creating a via down to the electrical contact enhancement layer, filling the via with an electrically conductive material, and covering the structure with a metal layer to create an alternative embodiment of the phase change memory device of FIGS. 1 and 2.



DETAILED DESCRIPTION
The following description of the invention will typically be with reference to specific structural embodiments and methods. It is to be understood that there is no intention to limit the invention to the specifically disclosed embodiments but that the invention may be practiced using other features, elements, methods and embodiments. Like elements in various embodiments are commonly referred to with like reference numerals.
FIGS. 1 and 2 are two views of a phase change memory device 10 made according to one embodiment of the invention. Device 10 comprises broadly a memory cell access layer 12 formed on a substrate 14 and a memory cell layer 16 formed on top of access layer 12. In this embodiment, access layer 12 comprises first and second access transistors 18, 20 formed at doped layer 21. Access transistors 18, 20 comprise first and second drains 22, 24, first and second sources 26, 28, first and second polysilicon word lines acting as first and second gates 30, 32, and a common source line 34. Common source line 34 contacts first and second sources 26, 28. If desired, a separate source line for each of first and second sources 26, 28 could be provided. Access transistors 18, 20 are generally conventional but need not be so. Also, access layer 12 could include access devices other than access transistors. First and second plugs 35, 36 extend from the top surface 38 of memory cell access layer 12, through a dielectric film layer 40 and to doped layer 21.
Memory cell layer 16 comprises a first electrode 42 contacting top surface 38 and first plug 35, a second electrode 44 contacting top surface 38, and a third electrode 46 contacting top surface 38 and second plug 36. First and second electrodes 42, 44 are separated by a gap 48 while second and third electrodes 44, 46 are separated by a gap 50. First and second phase change elements 52, 54 are formed within first and second gaps 48, 50 between and in contact with top surface 38 and in contact with the side walls 55 defining electrodes 42, 44, 46. As shown in FIG. 2, first and second phase change elements 52, 54 have a length 56 and a thickness 58. As shown in FIG. 1, each of first and second phase change elements 52, 54 have a width 60. Length 56, thickness 58 and width 60 are typically the same for both phase change elements, but need not be so. As discussed in more detail below, the size of phase change elements 52, 54 is minimized to reduce the current needed to cause a change between a lower resistivity, generally crystalline state and a higher resistivity, generally amorphous state.
Memory cell layer 16 also includes a conductive bit line 62 separated from electrode 42, 44 and 46 by a separation layer 64, typically made of a dielectric material such as silicon dioxide. An electrically conductive plug 67 extends through a via 66 formed through second separation layer 64 to electrically connect bit line 62 and second electrode 44.
Memory device 10 is substantially similar to the memory device showing FIGS. 1 and 2 of U.S. provisional patent application No. 60/736,722 with the following exception. Electrodes 42, 44, 46 of the present invention each comprise a main body portion 65 surround by an electrical contact enhancement material 69. Material 69 acts as a contact element for contact with phase change elements 54, 56 to enhance the electrical contact between electrode 42, 44 and 46 and the phase change elements. Main body portion 65 is typically tungsten while electrical contact enhancement material 69 is typically TiN, although other electrical contact enhancement materials such as TaAlN, WAlN or TiAlN may also be used.
A method for making phase change memory devices will now be discussed with reference to FIG. 3-25. Memory cell access layer 12 is typically made by conventional techniques. FIGS. 3 and 4 illustrate the final stages of making memory cell access layer 12. A source plug 68 is formed from top surface 38 to doped layer 21 between first and second gates 30, 32. A portion of source plug 68 adjacent to top surface 38 is removed, typically by etching, and the etched region is filled in with a dielectric material 70. Thereafter top surface 38 is subjected to chemical mechanical polishing to make the top surface suitable for deposition of memory cell layer 16.
FIG. 4A illustrates an alternative embodiment of memory cell access layer 12 which replaces etching a portion of source plug 68 and substitutes depositing another dielectric filler layer 40A and then forming extensions 35A, 36A of plugs 35, 36 through the dialectic filler layer 40A. FIG. 5 shows the memory cell access layer 12 of FIG. 4 after deposition of a phase change material layer 70 on top surface 38 and deposition of a first barrier layer 72, also called a cap layer, layer 72 typically an SiN oxygen barrier layer. Phase change material layer 70 has a thickness 73 corresponding to thickness 58 of FIG. 1. Layer 70 is preferably as thin as it can be made while maintaining appropriate functional characteristics for phase change bridges 52, 54. In this embodiment both layers 70, 72 are about 20 nm thick. Thickness 73 is preferably about 10 to 50 nm and more preferably no more than about 20 nm thick when made of, for example, conventional phase change materials described below, well below the minimum photolithographic feature size used to create mask 74 (discussed below), typically about 200 nm.
FIGS. 6 and 7 illustrate the result of forming a first photoresist mask 74 on first barrier layer 72. Mask 74 is typically made by lithography, typically photolithography, and is the first mask that will be used in creating phase change elements 52, 54. FIGS. 8 and 9 illustrate the result of a photoresist oxygen plasma trimming step to create a reduced size mask 76 having a first dimension 78, the first dimension corresponding to width 60 of FIG. 1. First dimension 78 is, in this embodiment, about 40 nm, well below the minimum photolithographic feature size used to create mask 74, typically about 200 nm. First dimension 78 is preferably about 10 to 50 nm and more preferably no more than about 40 nm thick.
FIGS. 10 and 11 illustrate the result of etching layer 72 except where covered by reduced size mask 76 followed by the removal of mask 76. FIG. 12 shows a result of etching phase change material layer 70. These steps and optional sidewall itching step to reduce the sidewall dimension result in a first phase change element structure 80 and a first barrier layer structure 82 having the same shape as reduced size mask 76 illustrated in FIG. 11.
FIG. 13 is a simplified cross-sectional view taken along line 13-13 of FIG. 12. FIG. 13A shows the structure of FIG. 13 after an optional step of sidewall etching of first phase change element structure 80 to create a sidewall etched structure 80A having a lateral dimension 81 that is less than the lateral dimension of structure 82, the lateral dimension of structure 82 typically being about 40 nm. FIG. 13B shows the structure of FIG. 13A after the deposition of a barrier layer 84B to create voids 85. Voids 85 enhance the thermal isolation of phase change element structure 80A thus helping to reduce the transition current required thus improving performance.
FIGS. 14 and 15 illustrate the result of several processing steps. A second barrier layer 84, typically made of SiN, is deposited on structures 82, 80 as well as exposed portions of top surface 38. A first separation layer 86, typically made of an oxide such as silicon oxide, is deposited on second barrier layer 84, layer 86 being about 300 nm thick in this embodiment. A second photoresist mask 88, typically made by photolithography, is formed on first separation layer 86. Mask 88 has first, second and third open regions 90, 92, 94 extending down to first separation layer 86.
FIG. 16 illustrates the results of an oxide etching step in which portions of first separation layer 86 has been removed to extend open regions 90, 92 and 94 down to second barrier layer 84 leading etched first separation layer 87. FIG. 17 shows result of removing mask 88.
FIGS. 18 and 19 show the structure of FIG. 17 after an appropriate sidewall trimming step to reduce the sidewall dimension of etched first separation layer 87. Doing so creates a thinned and etched first separation layer, identified by reference numerals 89 and 95, having a reduced thickness substantially less than the minimum lithographic feature size, preferably about 20 to 150 nm, and more preferably about 60 nm. Such procedures may include a HF dip or a photoresist trimming procedure. The reduced thickness corresponds to length 56 of phase change elements 52, 54.
FIG. 20 shows result of etching second barrier layer 84, first barrier layer structure 82 and first phase change element structure 80 using appropriate etching techniques for the compositions of the various layers. In this case thinned and etched first separation layer 89 acts as a mask for the etching of layers 843 82 and 80. This results in the creation of first ad second phase change elements 52, 54.
FIG. 21 illustrates the structure of FIG. 20 after the deposition of an electrical contact enhancement layer 102, typically TiN, followed by deposition of an electrical conductor 104, typically tungsten. Layer 102 is used to enhance the electrical contact between electrodes 42, 44, 46 and phase change elements 52, 54. A chemical mechanical polishing step is then used to create the structure shown in FIGS. 22 and 22A, including surface 105 and electrodes 42, 44, 46. Each electrode 42, 44, 46 includes a metal conductor element 106 from electrical conductor 104 and an electrical contact enhancement element 108 from electric contact enhancement layer 102.
FIG. 22B shows an alternative environment in which a layer 110 of a phase change material is deposited on the sidewall 112 of the etched structure from element 89 to surface 38, see FIG. 20. Thereafter electrical contact enhancement layer 102 and electrical conductor 104 are deposited within open regions 90, 92 and 94 as discussed above with regard to FIGS. 21 and 22. The embodiment of FIG. 22C is similar to the embodiment of FIG. 22B but layer 110 also covers surface 38. In both embodiments layer 110 helps to improve the thermal isolation of phase change elements 52, 54 from the electrodes. This helps to decrease the current required to transition elements 52, 54 thus improving performance.
As shown in FIG. 23, second separation layer 64 is applied to surface 105 and via 66 is formed through layer 64 to contact second electrode 44. A second electrically conductive material is then applied onto layer 64 to create bit line 62 over layer 64. The resulting phase change memory device 10 is illustrated in FIGS. 1 and 2.
Plugs 35, 36, 67 are typically made of tungsten while common source line 34 and bit line 62 are typically created by copper metallization; other types of metallization, including aluminum, titanium nitride, and tungsten based materials, can be used as well.
A further alternative embodiment will be discussed with reference to FIGS. 26-38. The initial manufacturing steps for this embodiment are the same as those disclosed in FIGS. 1-4. FIG. 26 illustrates a structure similar to that of FIG. 5 but also includes an underlying separation layer 112, between surface 38 and phase change material layer 70, and an overlying separation layer 114, between layer 70 and layer 72. Both of separation layers 112 and 114 are typically silicon dioxide. Other materials, such as SiN may also be used for one or both of separation layers 112, 114. FIG. 27 is similar to FIG. 6 and includes mask 74 deposited on layer 72. The top view of FIG. 27 is the same as FIG. 7. FIG. 28, similar to FIG. 8, illustrates trimming of mask 74 to obtain reduced size mask 76 with the top view the same as FIG. 9. FIG. 29, similar to FIG. 10, shows the result of etching of barrier layer 72 to create an etched why I need a barrier layer 71 and the removal of mask 76. The top view of FIG. 29 is the same as in FIG. 11. FIG. 30 is similar to FIG. 12 and shows the result of etching separation layer 114 and phase change material layer 70 and then the removal of etched barrier layer 71. Doing so results in etched overlying separation layer 116 and first phase change element structure 80.
FIG. 31 shows the deposition of second barrier layer 84, typically SiN, over layer 116, structure 80 and layer 112. Thereafter, as shown in FIG. 32, mask 88, typically of SiN, is formed on layer 84 with open regions 90, 92 and 94 formed therein. The top view is the same as FIG. 15. As shown in FIG. 33, portions of layer 84 and layer 116 below open regions 90, 92 and 94 are etched and then mask 88 is removed leaving an etched barrier layer 118 and a further etched overlying separation layer 120. FIG. 34 shows the results of stack etching of material below open regions 90, 92 and 94, through underlying separation layer 112 and down to surface 38 of layer 40. This creates an etched underlying separation layer 124 with phase change elements 52, 54 spaced apart above surface 38 and thus spaced apart above memory cell access layer 12. The portions of barrier layer 118 above phase change elements 52, 54 act as a protective cap during the etching of underlying separation layer of 112.
FIG. 35 illustrates the result of deposition of an electrical contact enhancement layer 126, typically TiN, on top surface 128, sidewalls 130 and surface 38 of the structure of FIG. 34. FIG. 36 illustrates results of deposition of an oxide 132, such as SiO2, followed by chemical mechanical polishing to create surface 134. Thereafter an oxide or other separation layer 136 is deposited on surface 134, see FIG. 37. A via 138 is formed through oxide layer 136 and oxide 132 followed by metallization, typically creating a tungsten plug 140 within via 138 and a metal layer 142. Metal layer 142 covers oxide layer 136 and contacts plug 140. The resulting phase change memory device 10 is shown in FIG. 38.
Embodiments of the memory cell include phase change based memory materials, including chalcogenide based materials and other materials, for phase change elements 52, 54. Chalcogens include any of the four elements oxygen (O), sulfur (S), selenium (Se), and tellurium (Te), forming part of group VI of the periodic table. Chalcogenides comprise compounds of a chalcogen with a more electropositive element or radical. Chalcogenide alloys comprise combinations of chalcogenides with other materials such as transition metals. A chalcogenide alloy usually contains one or more elements from group IV of the periodic table of elements, such as germanium (Ge) and tin (Sn). Often, chalcogenide alloys include combinations including one or more of antimony (Sb), gallium (Ga), indium (In), and silver (Ag). Many phase change based memory materials have been described in technical literature, including alloys of: Ga/Sb, In/Sb, In/Se, Sb/Te, Ge/Te, Ge/Sb/Te, In/Sb/Te, Ga/Se/Te, Sn/Sb/Te, In/Sb/Ge, Ag/In/Sb/Te, Ge/Sn/Sb/Te, Ge/Sb/Se/Te and Te/Ge/Sb/S. In the family of Ge/Sb/Te alloys, a wide range of alloy compositions may be workable. The compositions can be characterized as TeaGebSb100-(a+b).
One researcher has described the most useful alloys as having an average concentration of Te in the deposited materials well below 70%, typically below about 60% and ranged in general from as low as about 23% up to about 58% Te and most preferably about 48% to 58% Te. Concentrations of Ge were above about 5% and ranged from a low of about 8% to about 30% average in the material, remaining generally below 50%. Most preferably, concentrations of Ge ranged from about 8% to about 40%. The remainder of the principal constituent elements in this composition was Sb. These percentages are atomic percentages that total 100% of the atoms of the constituent elements. (Ovshinsky '112 patent, cols 10-11.) Particular alloys evaluated by another researcher include Ge2Sb2Te5, GeSb2Te4 and GeSb4Te7 (Noboru Yamada, “Potential of Ge—Sb—Te Phase-Change Optical Disks for High-Data-Rate Recording”, SPIE v. 3109, pp. 28-37 (1997).) More generally, a transition metal such as chromium (Cr), iron (Fe), nickel (Ni), niobium (Nb), palladium (Pd), platinum (Pt) and mixtures or alloys thereof may be combined with Ge/Sb/Te to form a phase change alloy that has programmable resistive properties. Specific examples of memory materials that may be useful are given in Ovshinsky '112 at columns 11-13, which examples are hereby incorporated by reference.
Phase change alloys are capable of being switched between a first structural state in which the material is in a generally amorphous solid phase, and a second structural state in which the material is in a generally crystalline solid phase in its local order in the active channel region of the cell. These alloys are at least bistable. The term amorphous is used to refer to a relatively less ordered structure, more disordered than a single crystal, which has the detectable characteristics such as higher electrical resistivity than the crystalline phase. The term crystalline is used to refer to a relatively more ordered structure, more ordered than in an amorphous structure, which has detectable characteristics such as lower electrical resistivity than the amorphous phase. Typically, phase change materials may be electrically switched between different detectable states of local order across the spectrum between completely amorphous and completely crystalline states. Other material characteristics affected by the change between amorphous and crystalline phases include atomic order, free electron density and activation energy. The material may be switched either into different solid phases or into mixtures of two or more solid phases, providing a gray scale between completely amorphous and completely crystalline states. The electrical properties in the material may vary accordingly.
Phase change alloys can be changed from one phase state to another by application of electrical pulses. It has been observed that a shorter, higher amplitude pulse tends to change the phase change material to a generally amorphous state. A longer, lower amplitude pulse tends to change the phase change material to a generally crystalline state. The energy in a shorter, higher amplitude pulse is high enough to allow for bonds of the crystalline structure to be broken and short enough to prevent the atoms from realigning into a crystalline state. Appropriate profiles for pulses can be determined, without undue experimentation, specifically adapted to a particular phase change alloy. A material useful for implementation of a PCRAM described herein is Ge2Sb2Te5. Other types of phase change materials can also be used.
The invention has been described with reference to phase change materials. However, other memory materials, also sometimes referred to as programmable materials, can also be used. As used in this application, memory materials are those materials having electrical properties, such as resistance, that can be changed by the application of energy; the change can be a stepwise change or a continuous change or a combination thereof. Other programmable resistive memory materials may be used in other embodiments of the invention, including N2 doped GST, GexSby, or other material that uses different crystal phase changes to determine resistance; PrxCayMnO3, PrSrMnO, ZrOx, or other material that uses an electrical pulse to change the resistance state; TCNQ, PCBM, TCNQ-PCBM, Cu-TCNQ, Ag-TCNQ, C60-TCNQ, TCNQ doped with other metal, or any other polymer material that has bistable or multi-stable resistance state controlled by an electrical pulse. Further examples of programmable resistive memory materials include GeSbTe, GeSb, NiO, Nb—SrTiO3, Ag—CeTe, PrCaMnO, ZnO, Nb2O5, Cr—SrTiO3.
For additional information on the manufacture, component materials, use and operation of phase change random access memory devices, see U.S. patent application Ser. No. 11/155,067, filed 17 Jun. 2005, entitled Thin Film Fuse Phase Change Ram And Manufacturing Method.
Advantages of an embodiment described herein include better electrical contact between the electrodes and the phase change elements. In addition, the use of a thermal insulation material between the electrodes and the phase change element enhances the thermal insulation between the electrodes and the phase change element. The provision that the length, width and thickness of the phase change element ensures that the volume of the phase change element is less than the cube of the minimum lithographic feature size used to form the phase change memory cell. Therefore, the current used in reset and programming is confined in a small volume allowing high current density and resultant local heating at lower reset current levels and lower reset power levels.
While the present invention is disclosed by reference to the preferred embodiments and examples detailed above, it is to be understood that these examples are intended in an illustrative rather than in a limiting sense. It is contemplated that modifications and combinations will occur to those skilled in the art, which modifications and combinations will be within the spirit of the invention and the scope of the following claims.
Any and all patents, patent applications and printed publications referred to above are hereby incorporated by reference.

## Claims

1. A phase change memory device comprising:
a memory cell access layer; and
a memory cell layer, operably coupled to the memory cell access layer, comprising a phase change memory cell, said memory cell comprising:
first and second opposed, spaced apart contact elements, respectively;
a phase change element positioned between the first and second contact elements and electrically coupling the first and second contact elements to one another;
the phase change element having a width, a length and a thickness, the length measured between the first and second contact elements and the width measured perpendicular to the length;
each of the length, the thickness and the width being less than a minimum lithographic feature size used to form the phase change memory cell; and
the first and second contact elements and the phase change element therebetween defining a memory cell arrangement extending generally parallel to the memory cell access layer.

2. The device of claim 1, wherein:
a first electrode comprises said first contact element;
a second electrode comprises said second contact element; and
the second electrode comprises a metal plug element connected to and spaced apart from the second contact element, the metal plug element extending generally perpendicular to the memory cell arrangement.

3. The device of claim 2, wherein the second contact element comprises a layer of TiN extending between the phase change element and the metal plug element.

4. The device of claim 1, wherein the memory cell access layer comprises a dielectric filler layer, and the phase change element is positioned directly opposite and adjacent to the dielectric filler layer.

5. The device of claim 1, wherein the phase change element is separated from the memory cell access layer by a dielectric material-filled region so the phase change element is completely and directly separated from the memory cell access layer by dielectric material.

6. The device of claim 5, wherein the phase change element is positioned spaced apart from the memory cell access layer by an oxide.

7. The device of claim 1, wherein the memory cell layer comprises an electrical contact enhancement material between the contact elements and the phase change element to enhance electrical contact between the contact elements and the phase change element.

8. The device of claim 7, wherein the contact enhancement material comprises TiN.

9. The device of claim 1, wherein the memory cell layer comprises a thermal insulation material between the contact elements and the phase change element to enhance thermal insulation between the contact elements and the phase change element.

10. The device of claim 1 wherein the memory cell layer comprises an electrical contact enhancement material and a thermal insulation material between the contact elements to enhance both thermal insulation and electrical contact between the contact elements and the phase change element.

11. The device of claim 1, wherein the phase change element has two solid phases that are reversibly inducible by a current.

12. The device of claim 1, wherein the phase change element has two solid phases that are reversibly inducible by a voltage applied across one or more of the contact elements.

13. The device of claim 1, wherein the phase change element has at least two solid phases that include a generally amorphous phase and a generally crystalline phase.

14. The device of claim 1, wherein the phase change element comprises memory material comprising an alloy including a combination of Ge, Sb, and Te.

15. The device of claim 1, wherein the phase change element comprises memory material comprising an alloy including a combination of two or more materials from the group of Ge, Sb, Te, Se, In, Ti, Ga, Bi, Sn, Cu, Pd, Pb, Ag, S, and Au.

16. The device of claim 1, wherein the first and second contact elements comprise an element selected from a group consisting of Ti, W, Mo, Al, Ta, Cu, Pt, Ir, La, Ni, and Ru and alloys thereof

17. The device of claim 1, wherein the minimum lithographic feature size is about 200 nm.

18. The device of claim 1, wherein the length is about 10 to 100 nm.

19. The device of claim 1, wherein the length is no more than about 60 nm.

20. The device of claim 1, wherein the width is about 10 to 50 nm.

21. The device of claim 1, wherein the width is no more than about 40 nm.

22. The device of claim 1, wherein the thickness is about 10 to 50 nm.

23. The device of claim 1, wherein the thickness is no more than about 20 nm thick.