##### 








---



##### 



ITEM NO
    
    SUPPLIES/SERVICES
    
    QUANTITY
    
    UNIT
    
    UNIT PRICE
    
    
    AMOUNT0001
    
    
    
    1
    
    Lot
    
    $
    3,095,000.00
    
    
    $
    3,095,000.00SUPPLIES OR SERVICESFFPAdvanced Manufacturing of X-Ray proximity masks for sub-90nm
DOD Devices.
The technology, material, and services are in
accordance with the Attachment (1)
Statement of Work (2)Milestone Payment Schedule, and Attachment (3)
Performance Questionaire. DMEA: ME6Z3R66F016MPFOB: DestinationNET AMT
    
    $
    3,095,000.00
 ITEM NO
    
    SUPPLIES/SERVICES
    
    QUANTITY
    
    UNIT
    
    UNIT PRICE
    
    
    AMOUNT000101
    
    
    
    
    
    LotFunding in support of CLIN 0001FFPAdvanced Manufacturing of X-Ray proximity masks for sub-90nm
DOD Devices.
As specified in the Statement of Work. DMEA: ME6Z3R66F016MPFOB: DestinationPURCHASE REQUEST NUMBER: 0010180381NET AMT
    
    $
    0.00ACRN AA
    
    
    
    
    
    
    
    $
    3,095,000.00CIN: 001018038100001




---



##### 



ITEM NO
    
    SUPPLIES/SERVICES
    
    QUANTITY
    
    UNIT
    
    UNIT PRICE
    
    
    AMOUNT0002
    
    
    
    
    
    Lot
    
    
    
    
    
    NSPSUPPLIES OR SERVICESFFPScientific and Technical data for Item 0001 in accordance
with Exhibit A
Contract Data Requirments list DD Form 1423FOB: DestinationNET AMT
 ITEM NO
    
    SUPPLIES/SERVICES
    
    QUANTITY
    
    UNIT
    
    UNIT PRICE
    
    
    AMOUNT0003
    
    
    
    
    
    Lot
    
    
    
    
    
    NSPSUPPLIES OR SERVICESFFPAdministrative and Financial Data for Item 0001 in
accordance iwth Exhibit B
Contract Data Requirements List DD Form 1423FOB: DestinationNET AMT




---



##### 



SECTION C




---



##### 



CLIN
    
    INSPECT AT
    
    INSPECT BY
    
    ACCEPT AT
    
    ACCEPT BY0001
    
    N/A
    
    N/A
    
    N/A
    
    Government000101
    
    N/A
    
    N/A
    
    N/A
    


    N/A0002
    
    N/A
    
    N/A
    
    N/A
    
    Government0003
    
    N/A
    
    N/A
    
    N/A
    
    Government




---



##### 



DELIVERIES OR PERFORMANCE
   CLIN
    
    DELIVERY DATE
    
    QUANTITY
    
    SHIP TO ADDRESS
    
    UIC0001
    
    POP04-AUG-2006 TO
    
    N/A
    
    N/A03-AUG-2007
    
    
    
    FOB: Destination000101
    
    N/A
    
    N/A
    
    N/A
    
    N/A0002
    
    POP04-AUG-2006 TO
    
    N/A
    
    N/A03-AUG-2007
    
    
    
    FOB: Destination0003
    
    POP04-AUG-2006 TO
    
    N/A
    
    N/A03-AUG-2007
    
    
    
    FOB: Destination




---



##### 



252.232-7003 ELECTRONIC SUBMISSION OF PAYMENT REQUESTS (MAY 2006)
      https://wawf.eb.mil.
 https://ecweb.dfas.mil.
  http://www.X12.org.
     252.246-7000 MATERIAL INSPECTION AND RECEIVING REPORT (MAR 2003)




---



##### 



5252.232-9513 INVOICING INSTRUCTIONS AND PAYMENT (WAWF INSTRUCTIONS) (MAR 2006)
  https://wawf.eb.mil http://www.wawftraining.com
 http://www.acquisition.navy.mil/navyaos/content/view/full/3521
   WAWF Invoice Type:
    
    Access the following web site for
information on invoice types:http://www.wawftraining.com/courses/_content
_package/content_files/menuTree.
htmlClick on Vendor, then Determine Type
of Document to Create.Issuing Office DODAAC
    
    Enter DODAAC of the activity issuing
the contract.Admin Office DODAAC:
    
    Enter Admin Office DODAACInspector DODAAC (if applicable):
    
    Enter Inspector DODAAC, or leave blankShip To DODAAC (for Combo), 
Service Acceptor DODAAC (for 2 in 1), 
Service Approver DODAAC (for Final Cost 
Voucher) (if applicable)
    
    Enter DODAACAcceptor DODAAC (if applicable):
    
    Enter Acceptor DODAAC **Organization
that Government Acceptor Works forLocal Processing Office (LPO if applicable):
    
    Enter LPO DODAAC (Local Admin), or
leave blank (DCMA Admin)DCAA Office DODAAC (Cost Voucher Approver 
if applicable):
    
    Enter DCAA Office DODAACPaying Office DODAAC:
    
    Enter Paying Office DODAAC Located on
Contract
    Name
    
    Email
    
    Phone
    
    RoleGlenn Marshall
    
    Glenn.marshall@navy.mil
    
    301-342-0060
    
    Technical Point of ContactCharles Caposell
    
    charles.caposell@navy.mil
    
    301-904-3502
    
    COR




---



##### 



LIST OF DOCUMENTS, EXHIBITS
 Document Type
    
    Description
    
    PagesAttachment 1
    
    Statement of Work
    
    8Attachment 2
    
    Payment Milestones
    
    1Attachment 3
    
    Performance Measurement Survey
    
    2




---



##### 



STATEMENT OF WORK  Delivery Order 5
 ADVANCED MANUFACTURING OF X-RAY PROXIMITY MASKS FOR SUB-100nm DEVICES
 JUNE 12, 2006
 1 INTRODUCTION/BACKGROUND
 1.1
    
    The effectiveness of our 21st Century warfighting capability is predicated
on a combination sensor and communications networks that enable the timely flow of the
right information to all echelons of warfighters engaged in military operations. Such
technology is necessary to provide warfighters the Single Integrated Picture (SIP) /Common
Operational Picture (COP) required toengage an enemy. These technologies can also be used
for humanitarian applications as well as for evaluation of the real and/or synthetic
systems. At the heart of these military and homeland defense systems are advanced
technology components (e.g., processors, rf sub-systems, photonics, MEMs, system-on-a-chip
(SOC), etc.), which provide the US substantial advantage over any adversary. The
performance of these enabling technologies has continued to advance at an amazing rate 
this rate is referred to as Moores Law. One of the major factors contributing to this
growth in computational performance, efficiency, spectrum of performance, bandwidth, etc.
is the ability to manufacture these products with ever decreasing geometries using advanced
lithographic tools, including X-ray lithography. Both the Government and industry have
invested in X-ray lithography technology development and demonstration since the 1980s at
a level approaching a billion dollars. Such tools now exist in small numbers and are being
used for defense products on a limited basis. X-ray lithography is not yet an accepted
technology for commercial device manufacturing. Because of the importance of the X-ray
Program and technology to the U.S. Defense community, this effort to advance the mask
technology and bridge the gap between limited defense applications and self-sustaining
commercial responsibility is established with this contract. Hence, work under this
contract shall give preference to defense applications but will also seek commercial
business in order to eventually establish a self-sustaining business capability.1.2
    
    One of the most critical parameters of masks fabricated for advanced lithography is
image placement error. This is particularly important for membrane masks such as those
required for x-ray and electron-beam projection lithography (EPL). These membrane masks
must be robust, resistant to thermal distortions, and strong enough to minimize any
in-plane distorting forces that occur as a result of processing. A key measure of material
stiffness is the Youngs modulus of elasticity. Typical membrane materials, such as
doped-silicon and silicon nitride (SiN) have a Youngs modulus in the 160GPa range. The
current x-ray mask membrane material is SiC, which has a relatively high Youngs modulus of
480 GPa, might possibly be improved through




---



##### 



better polishing to improve surface roughness, reduced defect levels, and/or better
stress uniformity (within wafer). Diamond films possess a high degree of mechanical
stiffness, with a Youngs modulus of greater than 900GPa. This would allow the
possibility of thinner membranes, which would increase the contrast of the mask. In
addition, the superior thermal properties of diamond would make it more resistant to
distortions from mask heating during electron beam scanning. Considerable progress has
been made in developing diamond films for x-ray mask membranes, but the effort is not
yet sufficient to lead to production worthy substrates.1.3
    
    The centerpieces of this project are the development of additional X-ray mask sources
and the JMAR/ BAES ability to expose these masks for DOD and commercially related programs.
To help accomplish these goals, JMAR will award a subcontract to BAE Systems, Nashua, NH to
support development of an Air Force Research Laboratory (AFRL) program that will
demonstrate the fabrication of devices for use in space and other applications using masks
obtained under this program. BAE Systems Nashua and Manassas together with JMAR propose to
support fabrication of CRAM with 35-50 nm contact holes enabling 4 Mb and higher densities.
The demonstration involves fabrication of CRAM wafers utilizing chalcogenide at the
Manassas Foundry up to the chalcogenide via hole level. Via-hole lithography will be
performed utilizing current X-ray lithography tools such as DPF system at Nashua and CPL
system at Burlington. The wafers will then be completed and evaluated at Manassas. The
proposed program includes two reduction printing approaches. This demonstration will
enable future production of high-density CRAM using X-ray lithography for high-priority,
military and space applications. Chalcogenide-based memories, when combined with a Rad-Hard
CMOS base technology, provide an attractive solution meeting the needs of space-based
applications for non-volatile memory. The memory stores information in the phase of the
material and is not susceptible to charge induced upset. It is a high density, low power,
and comparatively fast technology that BAE SYTEMS has licensed from Ovonyx, Inc., for
insertion into the Manassas, VA, 0.25μm Rad-Hard technology. These devices are needed in
quantities exceeding 10,000 parts and will have to become 4 times denser over several
generations. At this time, there is no other way to produce these devices and they are
critical to Air Force and National capabilities BAE SYSTEMS (Manassas) is currently under
contract to the Air Force Research Lab, Kirtland AFB, NM, to design and produce a 4 Mb
non-volatile random access memory. It is for this reason that JMAR will be preparing the
system in Vermont for demonstration and capability of this task for a future relocation of
the system to BAE Systems in Nashua in preparation for meeting the forecasted needs of the
program. JMAR will also work cooperatively with Science Research Laboratories in
Massachusetts in the exploration and design of an improved anode which will enable the
presently installed system to achieve greater reliability and throughput. This program
will supply proof of capability lithography for RAM densities up to 64Mb by June 2007. The
current state-of-the-art produces a 100nm diameter via for the chalcogenide element by
printing a 350nm photolithographic feature and then reducing the interior dimension of the
etched feature. However, densities greater than 16 Mb on a single chip are not




---



##### 



practical
using the current
photolithographic tools. Proximity x-ray lithography combined with reduction printing
techniques presents capability to produce sub-50 nm contact holes. A sub-50 nm contact
hole will enable increases in density for future space-based memory applications.
Additional planned applications include embedded non-volatile memory cores for use in
ASICs and microprocessors (SUROM, post-event recovery) as well as a reconfigurable,
non-volatile FPGA product. This type of memory also has commercial applications. Intel,
ST Microelectronics and others have licensed this technology as a replacement for FLASH
memory. Recent announcements by Intel (IEDM 2003, 8-10 Dec., Washington, DC) indicate
that they expect the cost/performance trade-off between FLASH and CRAM to balance
somewhere around the 90nm technology node. Unlike radiation tolerant space-based
applications, high density and low cost-per-bit requirements drive the commercial
marketplace. They would also benefit from the proposed demonstration because X-ray
lithography will lead to higher density devices. A successful initial CRAM program and
completion of the proposed CPL system upgrades, shall culminate in the transfer of the
CPL system developed in Burlington to BAES, Nashua, NH when funding is available to
replace the current DPF system and continue to support AFRL and other DOD customers in
producing MMIC and CRAM devices. JMAR Systems shall continue collaborative work on the
AFRL CRAM program
 2 SCOPE
 2.1
    
    The Contractor will continue to strengthen the mask supply chain through the
development of an Advanced X-ray mask Inspection System, (AXIS) for defect inspection
of 1x mask and wafers. JMAR shall build upon the capabilities of the AMRAY 2040 mask
critical dimension metrology tool installed in JMAR Systems location in South
Burlington, VT to increase the speed and reliability of inspections.2.2
    
    JMAR shall incorporate the improvements for the CPL System delivered under the
year 4 tasks. These improvements shall include advanced Stage controls within the
stepper and integration with the newly constructed X-ray Source.2.3
    
    JMAR will design and construct an Alpha tool for the purpose of applying
nano-particle coatings upon wafer and mask substrates. The system shall be constructed
using the basic principle operation of the Nanometrix coating system. Patents and
science usage will be granted under a no cost usage license from Nanometrix for use at
JMAR for the purposes of commercial or government demonstrations or tests.2.4
    
    JMAR shall collaborate with University Engineering departments to model and
fabricate various membrane materials for use in mask membranes, Zone Plates, X-Ray
chamber vacuum windows as well as protective pellicles. The initial work shall be done
as a modeling study, with verification and testing on




---



##### 



supplied samples from suppliers
as well as samples provided by the University
Engineering Department (using YSZ grown compounds). Concurrently, JMAR will work
the University in development of high precision stages, which will compliment the
prior years activity as well as provide large stage solutions and refinements to
the X-Ray stepper in an effort to match the present day lithographic and
inspection challenges. University collaboration is planned but not limited to
working with the University of Vermont, (Mechanical and Electrical Engineering
departments), University of Wisconsin, University of Colorado, and the University
of Montreal.2.5
    
    As the program progresses, it may be necessary for the contractor to lease or
purchase appropriate tools or technology to enable the operation of a mask prototype
manufacturing facility. This is considered to be within the scope of the overall
effort, but not deemed necessary under this delivery order. Recommendations for future
leases/purchases will be described in CDRL Item A004, the detailed program plan.2.6
    
    AssumptionsRight-to-use licenses for any Contractor-proprietary designs or software shall be
provided for the duration of the initial funded contract period of performance.2.7
    
    ConstraintsRight-to-use licenses do not imply transfer of ownership or rights to proprietary
development.
 3 REQUIREMENTS
 3.1
    
    The contractor shall continue the development of XRL/ CPL mask technology and
will deliver five (5) advanced masks, zone plates, and advanced membrane material sets.
Included in the five masks, the contractor shall provide masks required for the CRAM
demonstration. Requirements for this year will be aimed at the 70nm node to improve
upon prior achievements at the 80nm node.3.2
    
    The contractor shall demonstrate the exposure capability of these masks to make
devices. The contractor shall support the build of 4MB CRAM devices in conjunction with
on-going DoD program(s), and help design 16MB CRAM devices for use in programs managed
by the Department of Defense by completing representative exposures made with test
masks obtained under this and prior contract years.3.3
    
    The contractor shall improve the capabilities of the CPL System to match the
80nm requirements through Stepper stage modifications for increased




---



##### 



resolution, and
Point Source target chamber redesign and Laser path controls for greater
power and uniformity. Delivery Order 5 CPL system improvement tasks will focus on
the integration of the point source improvements as well as critical motion
control within the stepper wafer stage. Laser Produced Plasma (LPP) Point source
improvements made under delivery order 4 will be demonstrated upon conclusion of
the stepper stage upgrades.3.4
    
    The Contractor shall design and construct a thin film coating system based upon
the principle operating strategy of the Nanometrix proof of concept coating system. The
system must be capable of performing a variety of coating materials including rigid
substrates with flexibility in coating strategy by building in the ability to vary
process conditions for coating speed, compression, angle of coating and sequence of
coating.3.5
    
    The contractor shall further the supply chain rebuild by working with industry
partners in a collaboration to adapt inspection routines to improve upon the algorithms
developed under delivery order 4 on the AMRAY SEM. The contractor shall demonstrate
improved defect inspection routines which produce faster more reliable identification
and classification of defects within x-ray masks. Improvements will be achieved
through the further development of the system upgraded under delivery order 4.3.6
    
    The Contractor shall collaborate with SRL to fabricate a new water-cooled anode
with the goal being to decrease its amplitude near the foil surface. Through an iterave
process, design improvements shall be made to the pilot anode cumulating in a design
whose objective is to increase system reliability.3.7
    
    Using X-ray lithography, contact holes will be exposed in the development of 4
and 16MB CRAM devices. Demonstration wafers will be produced by BAE Systems during the
DPF source upgrade being developed in collaboration with SRL and BAE Systems3.8
    
    The contractor shall continue the support of work initiated by CNTech
(University of Wisconsin) under previous DARPA programs. Using the proven Butte mask
technology, JMAR shall work with CNTech to produce an x-ray mask set to demonstrate the
commercial viability of x-ray lithography for high aspect ratio magnetic memory
devices-
 3.8.1
    
    X-Ray Mask fabrication of high density magnetic RAM features.3.8.2
    
    Evaluation of overlay capabilities with the JMAR model 5C x-ray
stepper system installed in Wisconsin, demonstrating the capabilities of the
system to accomplish the lithographic requirements of magnetic RAM.




---



##### 



3.8.3
    
    Perform the necessary process steps to complete the critical steps
associated with the x-ray lithography portion of the magnetic RAM.
 3.9
    
    The contractor shall initiate the build of a Super High Gain concentrator
(x10) for the XRL point source. They will also pursue the adaptation of the High Gain
concentrator (x4) developed previously under related projects.3.10
    
    The contractor shall collaborate with a University Electrical Engineering
Department team who will fabricate YSZ (Yttrium Stabilized Zirconia) materials for
testing as advanced X-ray window and membrane materials. This research shall be
broken down into three sub-tasks:
 3.10.1
    
    Develop a multilayer process to obtain high quality, stable and robust free
standing membranes;3.10.2
    
    Expand the usable membrane size to dimensions suitable for use in the XRL point
source and with broad application to fuel cell technology;3.10.3
    
    Characterization of resultant microstructures;
 3.11
    
    The contractor shall collaborate with a University Mechanical Engineering
Department team who will (a) model the membranes developed by the Electrical
Engineering team (above), (b) assist in stage applications for advanced control and
manipulation of micro samples. (c) The ME Department team will numerically and
experimentally analyze the following aspects of the X-ray point source and lithography
station:
 
 3.12
    
    The contractor shall manage the manufacture and delivery of the deliverable
XRL/ CPL mask (sets) during the contract timeframe. A total of 5 masks, zone plates,
and membrane sets shall be delivered under this delivery order. The mix and quantities
of masks may be periodically reviewed with team members and the government and may be
adjusted to meet program needs. JMAR Systems shall give preference to the U.S.
suppliers according to demonstrated quality, cost and delivery. JMAR systems shall
notify NAVAIR contracts, in writing, before any changes are made to the type or
quantity of masks to be delivered.3.13
    
    Prior to shipment, Mask/Zone Plate suppliers will measure all products to
determine conformance with the Product Performance Specifications. JMAR will in turn
receive, verify specifications and inspect each mask prior to actual




---



##### 



exposure testing following delivery and acceptance by JMAR Systems. The quality of
the masks and exposures will be reported on in the Monthly Program Status Report
(MPSR).3.14
    
    JMAR Systems shall provide Program Management of all tasks in the SOW.3.15
    
    Performance Measurement
 3.15.1
    
    The Contractor shall participate in an evaluation of no less than every six
months using the survey found in Attachment (1) entitled Performance
Measurement Survey. The TPOC is responsible for facilitating the collection
process and ensuring that performance metrics are obtained in accordance with
said schedule.3.15.2
    
    Results of this survey will be used to determine future Task Order awards
and/or continuation of current Task Order awards under this IDIQ Contract.
Less than favorable responses may adversely impact continuation of performance
on respective Delivery/Task Orders.3.15.3
    
    The PCO and the TPOC will review the assessed metrics within two weeks of
submission by the contractor. Performance metrics will be shared with the
contractor at the end of each collection and assessment period.




---



##### 



4 DELIVERABLES
 4.1
    
    The contractor shall provide Five (5) mask, zone plate or membrane sets as
deliverables. JMAR shall furnish a proposed schedule of materials with quotation.4.2
    
    The contractor shall submit a monthly progress/status/milestone report in
accordance with CDRL Item A002 contained in the basic contract award consistent with the
reporting format used in year 1 through 3 of the contract.4.3
    
    The contractor shall submit a funds expenditure report along with the milestone
delivery invoices in accordance with CDRL Item B001 contained in the basic contract award
for the Period of Performance.4.4
    
    The contractor shall submit agenda, presentation material and minutes at all
planning or technical interchange meetings in accordance with CDRL Items A003, A007 and
A008. Contractor shall distribute minutes of all reviews and TIMS within ten (10)
working days of completion of the review/meeting.4.5
    
    The contractor shall submit a detailed program plan in accordance with CDRL Item
A004 contained in the basic contract award.4.6
    
    The contractor shall submit a Delivery Order Summary Report in accordance with CDRL
Item A005 contained in the basic contract award.4.7
    
    The contractor shall submit a Final Report in accordance with CDRL Item A009
contained in the basic contract award.4.8
    
    The contractor shall submit a Data Accession List/Internal Data in accordance with
CDRL Item A010 contained in the basic contract award.




---



##### 



PERFORMANCE MEASUREMENT SURVEY
 Understanding of the Technology
 Poor
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    Excellent1
    
    
    2
    
    
    3
    
    
    4
    
    
    5
    
    
    6
    
    
    7
    
    
    8
    
    
    9
    
    
    10
 Rating Based Upon
 q  q  q  q
 
 
 Ability to Incorporate Technology Into Relevant Priority Programs/Systems
 Poor
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    Excellent1
    
    
    
    2
    
    
    
    
    3
    
    
    
    
    4
    
    
    
    
    5
    
    
    
    
    6
    
    
    
    
    7
    
    
    
    
    8
    
    
    
    
    9
    
    
    
    
    10
 Rating Based Upon:
 q  q  q  q  q  q
 
 
 Ability to Plan, Coordinate and Manage a Development Effort
 Poor
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    Excellent1
    
    
    
    2
    
    
    
    
    3
    
    
    
    
    4
    
    
    
    
    5
    
    
    
    
    6
    
    
    
    
    7
    
    
    
    
    8
    
    
    
    
    9
    
    
    
    
    10
 Rating Based Upon:
 q
 q  q  q  q  q




---



##### 



Understanding of Applicable Procedures
 Poor
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    
    Excellent1
    
    
    
    2
    
    
    
    
    3
    
    
    
    
    4
    
    
    
    
    5
    
    
    
    
    6
    
    
    
    
    7
    
    
    
    
    8
    
    
    
    
    9
    
    
    
    
    10
 Rating Based Upon:
 q  q  q  q  q  q  q  q  q




---



##### 



PAYMENT MILESTONES
 Payment Milestones
 EventTypeEvent
    
    See
    
    
    
    Accomplishment
    
    Verification
    
    % of
    
    EventCLIN
    
    #
    
    Note 1
    
    Description
    
    expected
    
    method
    
    payment
    
    value
    
    Target date1
    
    
    1
    
    
    S
    
    Quarter 1 (July -
Sept 06) Mask
Program with JMAR
Systems
    
    Labor, SRL / BAE
Systems Anode
Program and
Subcontract Awards
IAW attached Gantt
Chart
    
    Certification by
Contractor
    
    
    26
    %
    
    $
    819,435
    
    
    28-Jul-061
    
    
    2
    
    
    C
    
    Quarter 2 (Oct -
Dec 06) Mask
Program with JMAR
Systems
    
    (2) Masks, Labor,
YSZ Phase 1, UVM
Stage 1, SRL / BAE
Systems Anode
Program status
reports IAW
attached Gantt
Chart
    
    Certification by
Contractor
    
    
    23
    %
    
    $
    718,221
    
    
    27-Oct-061
    
    
    3
    
    
    C
    
    Quarter 3 (Jan -
Mar 07) Mask
Program with JMAR
Systems
    
    (2 add) Masks,
Labor, Stage
upgrade interim
report, YSZ Phase
2, SRL / BAE
Systems Anode
Program status
reports and
Subcontract Awards
IAW attached Gantt
Chart
    
    Certification by
Contractor
    
    
    25
    %
    
    $
    782,417
    
    
    29-Dec-061
    
    
    4
    
    
    C
    
    Quarter 4 (Apr -
Jun 07) Mask
Program with JMAR
Systems
    
    (1 add) Masks,
MXRAM wafer demo,
SRL / BAE Systems
Anode Program
status reports,
Labor, UVM Stage
2, YSZ Phase 3,
IAW attached Gantt
Chart
    
    Certification by
Contractor
    
    
    15
    %
    
    $
    465,427
    
    
    27-Apr-071
    
    
    5
    
    
    C
    
    Final Payment for
Year 5 Mask Program
with JMAR Systems
    
    Final Acceptance of
all products &
Reports produced
during Mask
Contract. Delivery
of 5 masks.
    
    DD-250 signed-off
by the Governments
TPOC
    
    
    10
    %
    
    $
    309,500
    
    
    29-Jun-07100
    %
    
    $
    3,095,000
    
    
    Total
 Note 1: Event type: Severable (S) or Cumulative (C)




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#####