Zinc Oxide (ZnO) Nanobridge-based Sensor Platform and 

Functionalization for Explosive Sensing

by Ashley D. Mason and Brett H. Piekarski

ARL-TR-5462 March 2011

Approved for public release; distribution unlimited. 
NOTICES

Disclaimers

The findings in this report are not to be construed as an official Department of the Army position 

unless so designated by other authorized documents.

Citation of manufacturer’s or trade names does not constitute an official endorsement or 

approval of the use thereof.

Destroy this report when it is no longer needed. Do not return it to the originator.
Army Research Laboratory

Adelphi, MD 20783-1197

ARL-TR-5462 March 2011

Zinc Oxide (ZnO) Nanobridge-based Sensor Platform and 

Functionalization for Explosive Sensing

Ashley D. Mason and Brett H. Piekarski

Sensors and Electron Devices Directorate, ARL

Approved for public release; distribution unlimited. 
ii

REPORT DOCUMENTATION PAGE Form Approved

OMB No. 0704-0188

Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the 

data needed, and completing and reviewing the collection information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the 

burden, to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. 

Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently 

valid OMB control number.

PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS.

1. REPORT DATE (DD-MM-YYYY)

March 2011

2. REPORT TYPE

Progress

3. DATES COVERED (From - To)

June to September 2010

4. TITLE AND SUBTITLE

Zinc Oxide (ZnO) Nanobridge-based Sensor Platform and Functionalization for 

Explosive Sensing

5a. CONTRACT NUMBER

5b. GRANT NUMBER

5c. PROGRAM ELEMENT NUMBER

6. AUTHOR(S)

Ashley D. Mason and Brett H. Piekarski

5d. PROJECT NUMBER

5e. TASK NUMBER

5f. WORK UNIT NUMBER

7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES)

U.S. Army Research Laboratory

ATTN: RDRL-SER-L

2800 Powder Mill Road

Adelphi, MD 20783-1197

8. PERFORMING ORGANIZATION

 REPORT NUMBER

ARL-TR-5462

9. SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR'S ACRONYM(S)

11. SPONSOR/MONITOR'S REPORT

 NUMBER(S)

12. DISTRIBUTION/AVAILABILITY STATEMENT

Approved for public release; distribution unlimited.

13. SUPPLEMENTARY NOTES

14. ABSTRACT

Nanowire (NW)-based sensors present an alternative to thin films for improved gas sensing because of their inherently high 

surface-to-volume ratio. Zinc oxide (ZnO) NWs have a well-developed vapor-phase growth method and can be seeded on 

carbonized photoresist (C-PR). The C-PR also acts as an electrical contact; however, a molybdenum (Mo) layer decreases 

contact resistance and masks C-PR areas where growth is not desired. The selectivity of the device is refined using chemical 

functionalization, starting with a parylene-A activation layer applied via chemical vapor deposition (CVD). We present 

images of the C-PR, Mo, and NW interfaces taken with a microscope and a scanning electron microscope (SEM), as well as 

atomic force microscopy (AFM) roughness data for the parylene-A coatings. Using the functionalization described here, an 

array of devices could be created using the same process with only the final layer of functionalization (end-node species) 

changing. The results gleaned from these experiments can aid in the search for a chemical-based sensor array.

15. SUBJECT TERMS

ZnO, sensors, functionalization, nanowire, zinc oxide

16. SECURITY CLASSIFICATION OF:

17. LIMITATION

 OF 

 ABSTRACT

UU

18. NUMBER

OF 

 PAGES

22

19a. NAME OF RESPONSIBLE PERSON

Ashley D. Mason

a. REPORT

Unclassified

b. ABSTRACT

Unclassified

c. THIS PAGE

Unclassified

19b. TELEPHONE NUMBER (Include area code)

(301) 394-1163

Standard Form 298 (Rev. 8/98)

Prescribed by ANSI Std. Z39.18
iii

Contents

List of Figures iv

Acknowledgments v

1. Introduction/Background 1

2. Experiment 3

2.1 Base Device Structure .....................................................................................................3

2.1.1 Molybdenum Sputtering Recipe Development ..................................................4

2.2 Parylene-A Coating .........................................................................................................4

3. Results and Discussion 6

3.1 Protection of ZnO NWs...................................................................................................6

3.2 Electrical Measurements .................................................................................................7

4. Conclusions 8

5. References 9

List of Symbols, Abbreviations, and Acronyms 12

Distribution List 13
iv

List of Figures

Figure 1. Formation of Si NBs using an Au seed layer (11, 12).....................................................1

Figure 2. ZnO NWs seeded on a ZnO thin film (13, 14)................................................................2

Figure 3. Selective growth of ZnO NWs on C-PR (15)..................................................................2

Figure 4. Various types of parylene (N, C, and A). ........................................................................3

Figure 5. Process flow for fabrication of base device.....................................................................3

Figure 6. Experimental setup and resulting vapor-solid NW growth. ............................................4

Figure 7. Film cracking when initial recipe was used on C-PR layer (left) and successful Mo 

deposition on C-PR (right).........................................................................................................4

Figure 8. Parylene-A coating procedure. ........................................................................................5

Figure 9. Parylene-A film root-mean-square (rms) roughness and three-dimensional (3-D) 

plot. ............................................................................................................................................6

Figure 10. Visual differentiation between uncoated and coated sample regions: the left-hand 

side is uncoated (silver), the right-hand side is coated. .............................................................6

Figure 11. (a) Uncoated ZnO NWs (b) NWs protected with parylene-A coating. .........................7

Figure 12. I-V and UV measurements for a bare and parylene-A coated NBs (26).......................7
v

Acknowledgments

Ashley Mason would like to thank all of her collaborators in Electrical & Computer Engineering 

(ECE) and Chemistry at Oregon State University (OSU) and the Oregon Nanoscience and 

Microtechnologies Institute (ONAMI) for their dedication, support, and mentorship (Chien-Chih 

Huang, John Conley, Myra Koesdjojo, Vincent Remcho, and Jack Rundel). She would also like 

to thank her coworkers at the U.S. Army Research Laboratory (ARL) for help with the atomic 

force microscopy (AFM) measurements, the CVC 610 sputter system, the CHA e-beam 

evaporator, and development of the photolithography recipes (Timothy Marr, Matthew Chin, and

Richard Fu).
vi

INTENTIONALLY LEFT BLANK.
1

1. Introduction/Background

The enhanced surface-to-volume ratio of nanowires (NWs) allows higher sensitivity than thinfilm-based alternatives (1). The role of surface states is amplified, which facilitates gas sensing

(2–5). Specifically, metal-oxide NWs have been used to detect a number of gases (5–8) and can 

be fabricated using a relatively easy vapor-solid growth method (9, 10). Although NW-based 

devices are a highly sensitive platform, the development of wafer-scale integrated selective 

sensors still remains a challenge. 

NW nanobridge (NB) devices can be grown from one electrode and terminate on an opposing 

electrode, so no additional processing steps are needed to make electrical contact. Figure 1 

shows images of the earliest reported NB device. Silicon (Si) NWs were grown on a silicon-oninsulator (SOI) substrate using a patterned gold (Au) catalyst (11, 12). The difficulty of 

patterning Au, metal contamination, and the need for an SOI substrate are some of the drawbacks 

of this method. Alternatively, as shown in figure 2, zinc oxide (ZnO) NB devices have been 

created using a patterned ZnO seed layer (13, 14). Although the use of a metal catalyst is 

avoided, this method still requires a SOI substrate, and reactive ion etching is required for trench 

formation, deposition, and patterning of the seed.

Figure 1. Formation of Si NBs using an Au seed layer (11, 12).
2

Figure 2. ZnO NWs seeded on a ZnO thin film (13, 14).

Recently, carbonized photoresist (C-PR) has been demonstrated as a nucleation layer for 

selective and oriented growth of ZnO NWs from evaporated ZnO powder, as shown in figure 3

(15). The advantages of the C-PR nanobridge approach are (1) the NWs can be seeded without 

the introduction of metal contamination and (2) there are more options for a base substrate, an 

SOI substrate is not required. Traditional lithography is used to pattern the growth area, which 

greatly reduces to complication of fabrication. 

Figure 3. Selective growth of ZnO NWs on C-PR (15).

Preliminary reports of electrical measurements on C-PR based NBs have been reported (16, 17).

As a proof of concept, our initial selective sensing demonstrations were based on the exploitation 

of bonding between biotin and streptavidin. Since ZnO is known to dissolve in deionized (DI) 

water and all the processes used to attach biotin to the surface require DI water (18), the focus of 

this work was to investigate potential ways to protect the ZnO NWs.

Parylene or [2,2] paracyclophane was originally manufactured as a dimer and is commonly used 

as a moisture barrier and an activation layer. There are many different variations of parylene; the 

monomers of a few examples are shown in figure 4. Parylene-N (no functional group) and 

parylene-C (chlorine group) have been the most widely used previously. We are developing a 

chemical vapor deposition (CVD) coating process for amino-[2,2] paracyclophane (19, 20) or 

parylene-A. The amine group is more useful than the other functional groups for anchoring 

aptamers, which can be used to selectively sense a target species (21).
3

Figure 4. Various types of parylene (N, C, and A).

2. Experiment

2.1 Base Device Structure

The base device structure process flow is shown in figure 5. Wet oxidation was used to grow a 

200–300 nm oxide on a Si wafer. Lithography was used to define the device area, then 

photoresist was carbonized for 60 min at 900 °C and 5 Torr in a reducing atmosphere (95% 

argon [Ar], 5% hydrogen [H2]), as in reference 22. Molybdenum (Mo) was sputtered and 

patterned using a lift-off process. This film was added to reduce contact resistance and reduce the 

impact of bulk effects by limiting the growth of ZnO NWs to only the bridging area. A burn-in 

time of 3 min was included prior to each Mo deposition. A ramp time of 1 min was used to 

reach the full power of 1 kW. A 300-nm film was sputtered using a pressure of 1.1x10–6 Torr Ar

and a deposition time of 30 min. This initial recipe was successful on silicon dioxide (SiO2) but 

not on C-PR (see section 2.1.1); the process was adjusted to fix the initial incompatibility 

with C-PR. 

Figure 5. Process flow for fabrication of base device.

NWs were grown on the C-PR and Mo structure via carbothermal reduction of ZnO using pure 

ZnO (99.99%, Sigma-Aldrich) and graphite powders (99.9995%, Alpha Aesar) mixed in a 1:1 

ratio (23). The precursors were placed in a tube furnace at 920 °C. Nitrogen (N2) was used 

(150 sccm) to carry the mixture down to the growth substrate (held at 720 °C). We introduced 

1–2 sccm of oxygen (O2) 2.5 cm from the samples to aid in NW growth (shown in figure 6 along 

with resulting growth). 
4

Figure 6. Experimental setup and resulting vapor-solid NW growth.

2.1.1 Molybdenum Sputtering Recipe Development

The initial Mo recipe is listed in section 2.1. This recipe was successful for Mo deposition on Si 

with a native oxide; however, when the Mo deposition was attempted on the C-PR surface, the 

films were no longer uniform or smooth, but instead were cracked across the sample. As shown 

in figure 7, this prevented the complete fabrication of devices. The C-PR films were imaged and 

appeared smooth so an O2 plasma clean was included before the next sputter attempt (using the 

same initial recipe). The films were still cracking so the power was reduced to 300 W to decrease 

the deposition rate and the resulting film stresses that led to cracking. The successful deposition 

of Mo on C-PR is shown on the right in figure 7. NWs devices were made using these structures 

and electrical measurements are presented in section 3.2.

Figure 7. Film cracking when initial recipe was used on C-PR layer (left) and successful Mo deposition on 

C-PR (right).

2.2 Parylene-A Coating

The parylene-A dimer (dix-A, Kisco) was vaporized at 150 °C, pyrolized at 690 °C, and 

deposited on a ZnO thin film at room temperature, as shown in figure 8. Samples were placed at 

different locations in the tube to optimize the position for depositing a conformal film over the 

entire sample area. For characterization purposes, a poly(dimethylsiloxane) (PDMS) mask was 

applied to part of the sample to compare the uncoated and coated area. 
5

Figure 8. Parylene-A coating procedure.

Uniform films were deposited with 1–10 nm roughness between samples with most of the 

samples falling between 1–5 nm. The roughness of the deposited film was measured using a 

Veeco NanoScope V atomic force microscope (AFM) in tapping mode. A 1-μm scan size at

512 samples/line was used. These samples show a significant improvement over the original 

samples, which were only depositing parylene-A islands rather than a conformal film. By 

decreasing the pressure (originally 600 mTorr, now below 100 mTorr), nucleation in the gas 

phase was decreased and prevented island-like deposition (24). Representative AFM data for the 

conformal films are shown in figure 9. The thickness of the coating was too large to measure a

step height. The recipe was altered to obtain a thinner layer prior to electrical measurements. The 

final substrate position for our system was 29 in away from the parylene-A precursor.
6

Figure 9. Parylene-A film root-mean-square (rms) roughness and three-dimensional (3-D) plot.

3. Results and Discussion

3.1 Protection of ZnO NWs

Samples with a 20-nm blanket ZnO film were coated with parylene-A. From visual inspection, 

one can see a difference in color between the coated and uncoated region (figure 10). 

Figure 10. Visual differentiation between 

uncoated and coated sample regions: 

the left-hand side is uncoated (silver), 

the right-hand side is coated.

After developing the recipe for uniform parylene-A films, the next step was to prove that the 

coating preserved ZnO NWs when they were exposed to DI water. ZnO NWs with and without 

the parylene-A coating were soaked in DI water for 24 h (figure 11). Uncoated NWs dissolved

completely within 24 h and some dissolution was visible after only 20 min. After coating ZnO 

NWs with parylene-A, they remain unharmed for at least 24 h. The parylene-A surface can then 

be biotinylated to demonstrate selective sensing utilizing biotin/streptavidin bonding.
7

Figure 11. (a) Uncoated ZnO NWs (b) NWs protected with parylene-A coating.

3.2 Electrical Measurements

The current-voltage (I-V) characteristics and ultraviolet (UV) response of bare and parylene-A

coated devices were measured using an Agilent 4155C. A Mineralight 254-nm, 18.4-W lamp 

was used for UV excitation. Id-Vds characteristics are presented in figure 12 for the same device 

before and after parylene-A coating. Measurements were taken with and without UV excitation. 

Another mechanism for the NB UV response, other than just photocarrier generation, is oxygen 

adsorption and desorption on the surface. When the device is not exposed to UV, the 

chemisorbed O2 molecules on the NW surface form a depletion region, decreasing the NW 

conductivity. The higher dark current for the parylene coated devices (compared to the dark 

current for bare NWs) could be attributed to the displacement of surface oxygen or the reduction 

in available O2 adsorption sites because of the coating. UV exposure generates electron-hole 

pairs within the NWs, the newly created holes discharge O2

-

chemisorbed on the surface. This 

reduces the surface depletion region and the conductivity within the wire is increased (25, 26).

 

Figure 12. I-V and UV measurements for a bare and parylene-A coated NBs (26).
8

For the same device (before and after parylene-A coating), Id versus time is also shown in figure 

12. The measurements were made with Vds = 3 V and a floating gate. Devices were exposed to 

30-s pulses of UV light at room temperature in air. Id of the bare NBs increases up to 100 times

when exposed to UV. Although the parylene-A coated NBs exhibit a higher on current, the dark 

current is also higher, so the increase in Id is only 45 times. Both the average rise time (the time 

it takes Id to reach 90% of its maximum) and, to a larger extent, the average decay time (the time 

it takes for Id to decrease to 10% of its maximum) are increased when the NB is coated. This 

shows that a parylene-A coating can be used to attenuate the UV response.

4. Conclusions 

In this work, ZnO NWs were seeded on C-PR and an electrical connection was made 

simultaneously during the growth process. This method for fabricating NBs takes advantage of 

traditional lithography rather than more complicated etching techniques. Previous methods 

required the use of an SOI substrate whereas the C-PR method can be used on any insulating 

substrate. To protect ZnO NWs from dissolving in DI water, a parylene-A activation layer was 

applied via CVD. During the development process, parylene-A was deposited on 20-nm ZnO 

thick seed layers on Si substrates. Originally, the parylene-A was only deposited in islands on 

the ZnO film. By changing the sample position and decreasing the pressure (<100 mTorr), 

blanket films with rms roughness 1–10 nm were obtained. Electrical measurements were 

performed on a NB device before and after coating. I-V and UV measurements were used to 

show the impact of the parylene-A on device performance. The parylene-A coating decreased 

the UV sensitivity of the devices and could potentially be used to modulate environmental 

sensitivity when used in a vapor-phase selective sensing platform. The methods for further 

functionalizing and characterizing the parylene-A films will be continued at OSU. 
9

5. References

1. Lee, Q. H.; Gao, T.; Wang, Y. G.; Wang, T. H. Adsorption and Desorption of Oxygen 

Probed from ZnO Nanowire Films by Photocurrent Measurements. Appl Phys Lett 2005, 86,

123117.

2. Kar, A.; Strocio, M. A.; Dutta, M.; Kumari, J.; Meyyappan, M. Growth and Properties of 

Tin Oxide Nanowires and the Effect of Annealing Conditions. Semicond Sci Technol 2010, 

25, 024012.

3. Wright, J. S.; Lim, W.; Norton, D. P.; Pearton, S. J.; Ren, F.; Johnson, J. L.; Ural, A. Nitride 

and Oxide Semiconductor Nanostructured Hydrogen Gas Sensors. Semicond Sci Technol

2010, 25, 024002.

4. Sberveglieri, G.; Baratto, C.; Comini, E.; Faglia, G.; Ferroni, M.; Ponzoni, A.; Vomiero, A. 

Synthesis and Characterization of Semiconducting Nanowires for Gas Sensing. Sensors and 

Actuators B: Chemical 2007, 121, 208.

5. Offermans, P.; Crego-Calama, M.; Brongersma, S. H. Gas Detection with Vertical InAs 

Nanowire Arrays. Nano Letters 2010, 10, 2412.

6. Law, J.B.K.; Thong, J.T.L. Improving the NH3 Gas Sensitivity of ZnO Nanowire Sensors by 

Reducing the Carrier Concentration. Nanotechnology 2005, 19, 205502.

7. Choi, Y.-J.; Hwang, I.-S.; Park, J.-G.; Choi, K. J.; Park, J.-H.; Lee, J.-H. Novel Fabrication 

of an SnO2 Nanowire Gas Sensor with High Sensitivity. Nanotechnology 2005, 19, 095508.

8. Wang, Z. L. Zinc Oxide Nanostructures: Growth, Properties and Applications. Journal of 

Physics: Condensed Matter 2004, 16, R829.

9. Yao, B. D.; Chan, Y. F.; Wang, N. Formation of ZnO Nanostructures by a Simple Way of 

Thermal Evaporation. Appl Phys Lett 2002, 81, 757.

10. Lv, H.; Sang, D. D.; Li, H. D.; Du, X. B.; Li, D. M.; Zou, G. T. Thermal Evaporation 

Synthesis and Properties of ZnO Nano/Microstructures Using Carbon Group Elements as 

Reducing Agents. Nanoscale Res Lett 2010, 5, 624. 

11. Islam, M. S.; Sharma, S.; Kamins, T. U.; Williams, R. S. A Novel Interconnection 

Technique for Manufacturing Nanowire Devices. Appl Phys A 2005, 80, 1133.

12. Chaudhry, A.; Ramamurthi, V.; Fong, E.; Islam, M. S. Ultra-Low Contact Resistance of 

Epitaxially Interfaced Bridged Silicon Nanowires. Nano Letters 2007, 7, 1536.
10

13. Conley, J. F.; Stecker, L.; Ono, Y. Directed Integration of ZnO Nanobridge Devices on a Si 

Substrate. Appl Phys Lett 2005, 87, 223114.

14. Conley, J. F.; Stecker, L.; Ono, Y. Directed Assembly of ZnO Nanowires on a Si Substrate

Without a Metal Catalyst Using a Patterned ZnO Seed Layer. Nanotechnology 2005, 16,

292.

15. Cheng, C.; Lei, M.; Feng, L.; Wong, T. L.; Ho, K. M.; Fung, K. K.; Loy, M.M.T.; Yu, D.;

Wang, N. High-Quality ZnO Nanowire Arrays Directly Fabricated from Photoresists. ACS 

Nano 2009, 3, 53.

16. Huang, C.-C.; Pelatt, B. D.; Conley, Jr., J. F. Directed Integration of ZnO Nanobridge 

Sensors using Photolithographically Patterned Carbonized Photoresist. Nanotechnology

2010, 21, 195307.

17. Pelatt, B. D.; Huang, C.-C.; Conley, Jr., J. F. ZnO Nanobridge Devices Fabricated using 

Carbonized Photoresist. Solid State Electronics 2010, 54, 1143.

18. Zhou, J.; Xu, N.; Wang, Z. L. Dissolving Behavior and Stability of ZnO Wires in Biofluids: 

A Study on Biodegradability and Biocompatibility of ZnO Nanostructures. Adv Mater 2006, 

18, 2432.

19. Miwa, J.; Suzuki, Y.; Kasagi, N. Adhesion-based Cell Sorter with Antibody-immobilized 

Functionalized-parylene Surface. MEMS 2007, Kobe, Japan, 2007, 27.

20. Jeon, B.-J.; Kim, M.-H.; Pyun, J.-C. Application of a Functionalized Parylene Film as a 

Linker Layer of SPR Biosensor. Sensor Actuat B-Chem, Article in Press.

21. Clark, S. L.; Remcho, V. T. Electrochromatographic Retention Studies on a Flavin-binding 

RNA Aptamer Sorbent. Anal chem 2003, 75, 5692.

22. Park, B. Y.; Taherabadi, L.; Wang, C. L.; Zoval, J.; Madou, M. J. Electrical Properties and 

Shrinkage of Carbonized Photoresist Films and the Implications for Carbon 

Microelectromechanical System Devices in Conductive Media. J Electrochem Soc 2005, 

152, J136.

23. Huang, M. H.; Wu, Y. Y.; Feick, H.; Tran, N.; Weber, E.; Yang, P. D. Catalytic Growth of 

Zinc Oxide Nanowires by Vapor Transport. Adv Mater 2001, 13, 113.

24. Gill, W. N.; Rogojevic, S.; Lu, T. Vapor Deposition of Low-k Polymeric Dielectrics. in Low 

Dielectric Constant Materials for IC Applications, P. S. Ho, J. Leu, W. W. Lee, Ed. New 

York: Springer-Verlag Berlin Heidelberg, 2003, pp. 98–100.

25. Li, Y. B.; Paulsen, A.; Yamada, I.; Koide, Y.; Delaunay, J. J. Bascule Nanobridges Selfassembled with ZnO nanowires as Double Schottky Barrier UV Switches. Nanotechnology

2010, 21, 295502.
11

26. Mason, A. D.; Huang, C.-C.; Kondo, S.; Koesdjojo, M. T.; Tennico, Y. H.; Remcho, V. T.;

Conley, Jr., J. F. Synthesis, Functionalization, and Environmental Stabilization of ZnO 

Nanobridge Transducers for Gas and Liquid-phase Sensing. Sensor Actuat B-Chem,

Accepted for publication.

27. Pelatt, B. D. A Novel Method for Zinc Oxide Nanowire Sensor Fabrication; Oregon State 

University Master’s Thesis, 2009. 
12

List of Symbols, Abbreviations, and Acronyms

3-D three-dimensional 

AFM atomic force microscopy

Ar argon

ARL U.S. Army Research Laboratory 

Au gold

C-PR carbonized photoresist

CVD chemical vapor deposition

DI deionized 

ECE Electrical & Computer Engineering 

H2 hydrogen

I-V current-voltage

Mo molybdenum

N2 nitrogen

NB nanobridge

NW nanowire

O2 oxygen

ONAMI Oregon Nanoscience and Microtechnologies Institute 

OSU Oregon State University

PDMS poly(dimethylsiloxane)

rms root-mean-square

SEM scanning electron microscope

Si silicon

SiO2 silicon dioxide

SOI silicon-on-insulator

UV ultraviolet

ZnO zinc oxide
13

NO. OF

COPIES ORGANIZATION

1 ADMNSTR 

ELECT DEFNS TECHL INFO CTR 

ATTN DTIC OCP 

8725 JOHN J KINGMAN RD 

STE 0944

FT BELVOIR VA 22060-6218

1 CD OFC OF THE SECY OF DEFNS 

ATTN ODDRE (R&AT) 

THE PENTAGON

WASHINGTON DC 20301-3080

1 US ARMY RSRCH DEV AND ENGRG

CMND 

ARMAMENT RSRCH DEV & ENGRG

CTR 

ARMAMENT ENGRG & TECHNLGY 

CTR

ATTN AMSRD AAR AEF T J MATTS 

BLDG 305

ABERDEEN PROVING GROUND MD 

21005-5001

1 PM TIMS, PROFILER (MMS-P) 

AN/TMQ-52 

ATTN B GRIFFIES 

BUILDING 563

FT MONMOUTH NJ 07703

1 US ARMY INFO SYS ENGRG CMND

ATTN AMSEL IE TD A RIVERA 

FT HUACHUCA AZ 85613-5300

1 COMMANDER

US ARMY RDECOM 

ATTN AMSRD AMR W C MCCORKLE

5400 FOWLER RD

REDSTONE ARSENAL AL 35898-5000

1 US GOVERNMENT PRINT OFF 

DEPOSITORY RECEIVING 

SECTION

ATTN MAIL STOP 

IDAD J TATE 

732 NORTH CAPITOL ST NW

WASHINGTON DC 20402

1 US ARMY RSRCH LAB 

ATTN RDRL CIM G T LANDFRIED

BLDG 4600

ABERDEEN PROVING GROUND MD

21005-5066

NO. OF

COPIES ORGANIZATION

18 US ARMY RSRCH LAB 

ATTN IMNE ALC HRR MAIL &

RECORDS MGMT

ATTN RDRL SER L O NAYFEH 

ATTN RDRL CIM L TECHL LIB 

ATTN RDRL CIM P TECHL PUB 

ATTN RDRL SE J PELLEGRINO

ATTN RDRL SER E 

R DEL ROSARIO

ATTN RDRL SER L B NICHOLS 

ATTN RDRL SER L B PIEKARSKI

ATTN RDRL SER L E ZAKAR 

ATTN RDRL SER L M CHIN

ATTN RDRL SER L M DUBEY

ATTN RDRL SER L M ERVIN

ATTN RDRL SER L 

S KILPATRICK

ATTN RDRL SER 

L W NOTHWANG 

ATTN RDRL SER M E ADLER

ATTN RDRL SER 

P AMIRTHARAJ 

ATTN RDRL SER T KIPP

ATTN RDRL SER U K KAPPRA

ADELPHI MD 20783-1197

TOTAL: 26 (24 HCS, 1 CD, 1 ELECT)
14

INTENTIONALLY LEFT BLANK.