# Patent

## Title
In-situ photoresist strip during plasma etching of active hard mask

## Abstract

A method for etching features in a silicon layer is provided. A hard mask layer is formed over the silicon layer. A photoresist layer is formed over the hard mask layer. The hard mask layer is opened. The photoresist layer is stripped by providing a stripping gas; forming a plasma with the stripping gas by providing a high frequency RF power and a low frequency RF power, wherein the low frequency RF power has a power less than 50 watts; and stopping the stripping gas when the photoresist layer is stripped. The opening the hard mask layer and the stripping the photoresist layer are performed in a same chamber.

## Background
BACKGROUND OF THE INVENTION
The present invention relates to etching a silicon layer through a hard mask during the production of a semiconductor device. More specifically, the present invention relates to in-situ stripping of the photoresist after opening the hard mask.
During semiconductor wafer processing, features of the semiconductor device may be defined by a patterned hard mask. The semiconductor device features may be transferred into the hard mask using a photoresist and by plasma etching of the hard mask. After the features are transferred into the hard mask, the remaining photoresist on the hard mask may be removed.
Traditionally, separate equipments are used to open the hard mask and remove the photoresist. After the opening of the hard mask, wafers are removed from the plasma reactor and placed into a separate ashing equipment for stripping the remaining photoresist. In this case, another expensive equipment is needed solely for the stripping of the photoresist, which requires additional fabrication space and wafer processing time. Removing the wafers from the plasma chamber may cause wafers to come in contact with the environment, which may lead to modification of the etched surfaces and cause inconsistent wafer surface conditions before the stripping process.
SUMMARY OF THE INVENTION
To achieve the foregoing and in accordance with the purpose of the present invention a method for etching features in a silicon layer is provided. A hard mask layer is formed over the silicon layer. A photoresist layer is formed over the hard mask layer. The hard mask layer is opened. The photoresist layer is stripped by providing a stripping gas; forming a plasma with the stripping gas by providing a high frequency RF power and a low frequency RF power, wherein the low frequency RF power has a power less than 50 watts; and stopping the stripping gas when the photoresist layer is stripped.
In another embodiment of the invention, a method for etching features in a silicon layer is provided. A hard mask layer is formed over the silicon layer. A bottom anti-reflection coating layer is formed over the hard mask layer. A photoresist layer is formed over the bottom anti-reflection coating layer. The bottom anti-reflection coating layer is opened. The hard mask layer is opened. The bottom anti-reflection coating layer and the photoresist layer are stripped by providing a stripping gas; forming a plasma with the stripping gas by providing a high frequency RF power and a low frequency RF power, wherein the low frequency RF power has a power less than 50 watts; and stopping the stripping gas when the photoresist layer is stripped.
In yet another embodiment of the invention, an apparatus for etching features in a silicon layer, wherein the silicon layer is under a hard mask layer, which in turn is under a photoresist layer, is provided. The apparatus comprises a plasma processing chamber, a gas source, and a controller.
The plasma processing chamber comprises a chamber wall forming a plasma processing chamber enclosure; a substrate support for supporting a substrate within the plasma processing chamber enclosure; a pressure regulator for regulating the pressure in the plasma processing chamber enclosure; at least one electrode for providing power to the plasma processing chamber enclosure for sustaining a plasma; at least one RF power source electrically connected to the at least one electrode; a gas inlet for providing gas into the plasma processing chamber enclosure; and a gas outlet for exhausting gas from the plasma processing chamber enclosure.
The gas source is in fluid connection with the gas inlet of the plasma processing chamber, and comprises an opening gas source; and a stripping gas source.
The controller is controllably connected to the gas source and the at least one RF power source of the plasma processing chamber, and comprises at least one processor; and computer readable media, which comprises computer readable code for opening the hard mask layer; and computer readable code for stripping the photoresist layer, which comprises computer readable code for providing a stripping gas; computer readable code for forming a plasma with the stripping gas by providing a high frequency RF power and a low frequency RF power, wherein the low frequency RF power has a power less than 50 watts; and computer readable code for stopping the stripping gas when the photoresist layer is stripped.
These and other features of the present invention will be described in more detail below in the detailed description of the invention and in conjunction with the following figures.



BRIEF DESCRIPTION OF THE DRAWINGS
The present invention is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to similar elements and in which:
FIG. 1 is a high level flow chart of an embodiment of the invention.
FIG. 2 is a schematic view of a plasma processing chamber that may be used for etching.
FIGS. 3A-B illustrate a computer system, which is suitable for implementing a controller used in embodiments of the present invention.
FIGS. 4A-H are schematic views of a stack processed according to an embodiment of the invention.



DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
The present invention will now be described in detail with reference to a few preferred embodiments thereof as illustrated in the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without some or all of these specific details. In other instances, well known process steps and/or structures have not been described in detail in order to not unnecessarily obscure the present invention.
To facilitate understanding, FIG. 1 is a high level flow chart of a process used in an embodiment of the invention. A hard mask layer is formed over a silicon layer (step 100). The silicon layer may be polysilicon, crystalline silicon, such as a silicon wafer, amorphous silicon, or any other types of silicon. The silicon layer is generally a pure silicon, which may have a dopant.
A bottom anti-reflection coating (BARC) layer is formed over the hard mask layer (step 110). The bottom anti-reflection coating layer is optional. In another embodiment, the bottom anti-reflection coating layer may not be used. A photoresist layer is formed over the bottom anti-reflection coating layer (step 120). The photoresist layer consists of features, which will eventually be etched into the silicon layer.
The stack that includes the silicon layer, the hard mask layer, the bottom anti-reflection coating layer, and the photoresist layer is placed in a processing chamber (step 130). The bottom anti-reflection coating layer is opened using an opening gas (step 140). This process involves plasma etching the bottom anti-reflection coating layer to transfer the features defined in the photoresist layer into the bottom anti-reflection coating layer. The hard mask layer is then opened using an opening gas (step 150). This process involves plasma etching the hard mask layer to transfer the features defined in the photoresist layer into the hard mask layer.
The remaining photoresist layer and bottom anti-reflection coating layer are removed or stripped (step 140). In one embodiment, a low bias power process with oxidation chemistry is used to strip the remaining photoresist and bottom anti-reflection coating layers immediately or shortly after the opening of the hard mask. The stripping gas may comprise O2, N2, or H2, and may have a halogen addition.
The opening of the bottom anti-reflection coating layer and the hard mask layer (steps 140 and 150) and the stripping of the photoresist layer and the bottom anti-reflection coating layer (step 160) are performed in-situ, in the same plasma chamber. Thereafter, the stack with the silicon layer and the opened hard mask layer are removed from the chamber (step 170). Now the silicon layer is ready to be patterned using the hard mask layer. In one embodiment, the stack with the silicon layer and the opened hard mask layer is placed in another plasma processing chamber. The features are then etched into the silicon layer to define active areas (step 180). The hard mask is then completely removed (step 190).
FIG. 2 is a schematic view of a plasma reactor that may be used in practicing the invention. In one or more embodiments of the invention, a plasma reactor 200 comprises a top central electrode 206, top outer electrode 204, bottom central electrode 208, and a bottom outer electrode 210, within a chamber wall 250. A top insulator ring 207 insulates the top central electrode 206 from the top outer electrode 204. A bottom insulator ring 212 insulates the bottom central electrode 208 from the bottom outer electrode 210. Also within the plasma reactor 200, a substrate 280 is positioned on top of the bottom central electrode 208. Optionally, the bottom central electrode 208 incorporates a suitable substrate chucking mechanism (e.g., electrostatic, mechanical clamping, or the like) for holding the substrate 280.
A gas source 224 is connected to the plasma reactor 200 and supplies opening and stripping gas into a plasma region 240 of the plasma reactor 200. In this example, the gas source 224 comprises an opening gas source 264 and a stripping gas source 268. The opening gas source 264 supplies gas for opening the hard mask layer. The stripping gas source 268 supplies gas for stripping or removing the remaining photoresist layer on the hard mask layer after the hard mask is opened.
A high frequency RF source 252 and a low frequency RF source 254 are electrically connected to the plasma reactor 200 through a controller 235 to provide power to the electrodes 204, 206, 208, and 210. The high frequency RF source 252 generates high frequency RF power and supplies the high frequency RF power to the plasma reactor 200. Preferably, the high frequency RF power has a frequency greater than or equal to 20 mega Hertz (MHz). More preferably, the high frequency RF power has a frequency greater than or equal to 27 MHz. Even more preferably, the high frequency RF power has a frequency greater than or equal to 60 MHz.
The low frequency RF source 254 generates low frequency RF power and supplies the low frequency RF power to the plasma reactor 200. Preferably, the low frequency RF power has a frequency less than or equal to 20 mega Hertz (MHz). More preferably, the low frequency RF power has a frequency less than or equal to 10 MHz. Even more preferably, the low frequency RF power has a frequency less than or equal to 2 MHz.
The controller 235 is connected to the gas source 224, the high frequency RF source 252, and the low frequency RF source 254. The controller 235 controls the flow of the opening and stripping gas into the plasma reactor 200, as well as the generation of the RF power from the high frequency RF source 252, the low frequency RF source 254, the electrodes 204, 206, 208, and 210, and the exhaust pump 220.
In this example, confinement rings 202 are provided to provide confinement of the plasma and gas, which pass between the confinement rings and are exhausted by the exhaust pump 220.
FIGS. 3A and 3B illustrate a computer system, which is suitable for implementing the controller 235 used in one or more embodiments of the present invention. FIG. 3A shows one possible physical form of the computer system 300. Of course, the computer system may have many physical forms ranging from an integrated circuit, a printed circuit board, and a small handheld device up to a huge super computer. Computer system 300 includes a monitor 302, a display 304, a housing 306, a disk drive 308, a keyboard 310, and a mouse 312. Disk 314 is a computer-readable medium used to transfer data to and from computer system 300.
FIG. 3B is an example of a block diagram for computer system 300. Attached to system bus 320 is a wide variety of subsystems. Processor(s) 322 (also referred to as central processing units, or CPUs) are coupled to storage devices, including memory 324. Memory 324 includes random access memory (RAM) and read-only memory (ROM). As is well known in the art, ROM acts to transfer data and instructions uni-directionally to the CPU and RAM is used typically to transfer data and instructions in a bi-directional manner. Both of these types of memories may include any suitable of the computer-readable media described below. A fixed disk 326 is also coupled bi-directionally to CPU 322; it provides additional data storage capacity and may also include any of the computer-readable media described below. Fixed disk 326 may be used to store programs, data, and the like and is typically a secondary storage medium (such as a hard disk) that is slower than primary storage. It will be appreciated that the information retained within fixed disk 326 may, in appropriate cases, be incorporated in standard fashion as virtual memory in memory 324. Removable disk 314 may take the form of any of the computer-readable media described below.
CPU 322 is also coupled to a variety of input/output devices, such as display 304, keyboard 310, mouse 312, and speakers 330. In general, an input/output device may be any of: video displays, track balls, mice, keyboards, microphones, touch-sensitive displays, transducer card readers, magnetic or paper tape readers, tablets, styluses, voice or handwriting recognizers, biometrics readers, or other computers. CPU 322 optionally may be coupled to another computer or telecommunications network using network interface 340. With such a network interface, it is contemplated that the CPU might receive information from the network, or might output information to the network in the course of performing the above-described method steps. Furthermore, method embodiments of the present invention may execute solely upon CPU 322 or may execute over a network such as the Internet in conjunction with a remote CPU that shares a portion of the processing.
In addition, embodiments of the present invention further relate to computer storage products with a computer-readable medium that have computer code thereon for performing various computer-implemented operations. The media and computer code may be those specially designed and constructed for the purposes of the present invention, or they may be of the kind well known and available to those having skill in the computer software arts. Examples of computer-readable media include, but are not limited to: magnetic media such as hard disks, floppy disks, and magnetic tape; optical media such as CD-ROMs and holographic devices; magneto-optical media such as floptical disks; and hardware devices that are specially configured to store and execute program code, such as application-specific integrated circuits (ASICs), programmable logic devices (PLDs) and ROM and RAM devices. Examples of computer code include machine code, such as produced by a compiler, and files containing higher level of code that are executed by a computer using an interpreter. Computer readable media may also be computer code transmitted by a computer data signal embodied in a carrier wave and representing a sequence of instructions that are executable by a processor.
To facilitate understanding of the invention, FIG. 4A is a schematic cross-sectional illustration of a stack 400 with a silicon layer 410. Eventually, features will be etched into this silicon layer to define active areas. The silicon layer 410 is generally pure silicon, not silicon oxide or silicon nitride. In this example, the silicon layer 410 is a silicon wafer or silicon substrate. A hard mask layer 420 is formed over the silicon substrate 410 (step 100). In this embodiment, the hard mask layer 420 may be silicon-based. For example, the hard mask layer 420 may be dielectric materials, such as SiO2, SiON, or Si3N4. The hard mask layer 420 may comprise a single layer of a particular material or multiple layers of different materials and has a thickness. For example, in the embodiment shown in FIG. 4A, the hard mask layer 420 comprises a layer of SiO2 422 of approximately 1000 Angstrom in thickness over a layer of Si3N4 421 of approximately 1000 Angstrom in thickness.
A bottom anti-reflection coating layer 430 is formed over the hard mask layer 420 (step 110), as shown in FIG. 4B. Typically, a bottom anti-reflection coating layer 430 is formed between a material layer (in this case, the hard mask layer 420) that is to be patterned on a semiconductor structure using photolithography and an overlying photoresist layer (see step 120 and FIG. 4C below) in order to suppress the reflections from the material layer surface into the photoresist layer that may degrade the patterning. The bottom anti-reflection coating layer 430 is optional. In another embodiment, the bottom anti-reflection coating may not be used. The bottom anti-reflection coating layer 430, is present, has a thickness. For example, in the embodiment shown in FIG. 4B, the bottom anti-reflection coating layer 430 has a thickness of approximately 900 Angstrom.
A photoresist layer 440 with features is formed over the bottom anti-reflection coating layer 430 (step 120), as shown in FIG. 4C. Photoresist is a light-sensitive material. Features or patterns are transferred to the photoresist from a photomask using light. In one embodiment, the photoresist is a polymeric material.
The stack 400 that includes the silicon substrate 410, the hard mask layer 420, the bottom anti-reflection coating layer 430, and the photoresist layer 440 is placed in the plasma reactor 200 (step 130). First, the bottom anti-reflection coating layer 430 is opened (step 140), as shown in FIG. 4D. The features or patterns defined in the photoresist layer 440 are transferred to the bottom anti-reflection coating layer 430. In the embodiment shown in FIG. 4D, after the bottom anti-reflection coating layer 430 is opened, slight recesses 423 are formed into the SiO2 underlying layer 422, which is a part of the hard mask layer 420, at the bottom of the features. Next, the hard mask layer 420 is opened (step 150), as shown in FIG. 4E. The features defined in the photoresist layer 440 are continued to be transferred to the hard mask layer 420. If the hard mask layer 420 comprises multiple layers 421, 422 of different materials, as in the embodiment shown in FIG. 4E, then the features are transferred to all layers 421, 422 of the hard mask layer 420.
In this embodiment, to open the hard mask layer 420 (step 150), an opening gas is flowed into the plasma reactor 200. The opening gas may comprise CF4, CHF3, O2, or Ar. A high frequency RF source 252 supplies RF power to the plasma reactor 200 at a frequency greater than or equal to 20 MHz. Preferably, the high frequency RF power has a frequency greater than or equal to 27 MHz. Preferably, the high frequency RF power supplies RF power between approximately 150 watts and 800 watts. A low frequency RF source 254 supplies RF power to the plasma reactor 200 at a frequency less than or equal to 20 MHz. Preferably, the low frequency RF power has a frequency of approximately 2 MHz. Preferably, the low frequency RF power supplies RF power between approximately 300 watts and 1200 watts. The opening gas is formed into a plasma. The plasma is used to open the hard mask 430. Once the features are opened in the hard mask layer 430, the flow of the opening gas is stopped.
For example, the following is a specific recipe that may be used for the opening of the hard mask layer 420 (step 150) in the embodiment shown in FIG. 4E: pressure at 120 miliTorr; the high frequency RF power source 252 supplying 150 watts of RF power at 27 MHz frequency; the low frequency RF power source 254 supplying 750 watts of RF power at 2 MHz frequency; and the opening gas flow comprises 600 sccm of Ar, 110 sccm of CF4, 20 sccm of CHF3, and 16 sccm of O2.
The remaining photoresist layer 440 and bottom anti-reflection coating layer 430 over the hard mask layer 420 are stripped (step 160). FIG. 4F is a schematic cross sectional view of the stack 400 after the photoresist layer 440 and the bottom anti-reflection coating layer 430 are removed. Thus, only the silicon substrate 410 and the hard mask layer 420 remain. In this embodiment, a stripping gas is flowed into the plasma reactor 200. In one embodiment, the stripping gas comprises at least O2, N2, or H2. For example, the stripping may gas comprise at least NH3, O2, and CO or CO2. A high frequency RF source 252 supplies high frequency RF power to the plasma reactor 200. Preferably, the high frequency RF power has a frequency greater than or equal to 20 MHz. More preferably, the high frequency RF power has a frequency greater than or equal to 27 MHz. Even more preferably, the high frequency RF power has a frequency greater than or equal to 60 MHz. Preferably, the high frequency RF power supplies RF power between approximately 200 watts and 800 watts. More preferably, the high frequency RF power supplies RF power at approximately 300 watts. A low frequency RF source 254 supplies low frequency RF power to the plasma reactor 200. Preferably, the low frequency RF power supplies RF power between 0 to 600 watts. More preferably, only a small amount, such as less than or equal to 50 watts, of low frequency RF power is supplied to the plasma reactor 200. More preferably, no low frequency RF power is supplied to the plasma reactor 200.
The stripping gas is formed into a plasma, which is used to strip away the remaining photoresist layer 440 and bottom anti-reflection coating layer 430. The stripping of the photoresist layer 440 and the bottom anti-reflection coating layer 430 is done in-situ. The photoresist layer 440 and the bottom anti-reflection coating layer 430 are stripped away while the wafer remains in the same plasma chamber where the bottom anti-reflection coating layer 430 and the hard mask layer 420 are opened and shortly after the hard mask layer 420 is opened. Once the photoresist layer 440 and bottom anti-reflection coating layer 430 are completely removed, the flow of the stripping gas is stopped.
For example, the following is a specific recipe that may be used for the stripping of the photoresist layer 440 and the bottom anti-reflection coating layer 430 (step 160) in the embodiment shown in FIG. 4F: pressure at 300 miliTorr; the high frequency RF power source 252 supplying 300 watts of RF power at 27 MHz frequency; and the stripping gas flow comprises 1000 sccm of O2 and 50% center weighting of gas feeding (gases are normally fed into the processing chamber via two different paths: center and edge).
The stack 400 that includes the silicon substrate 410 and the opened hard mask layer 420 is removed from the plasma reactor 200 (step 170). Features 411 are etched into the silicon substrate 410 through the opened hard mask layer 420 (step 180). The recipe used for etching depends on the type of material that has to be etched. In this embodiment, because the substrate 410 is silicon, an appropriate recipe suitable for etching silicon material should be chosen. An etch gas is flowed into the etch chamber and one or more types of RF powers are supplied to the etch chamber to form the etch gas into a plasma, which is used to etch the silicon substrate 410. Once the etching is complete, the flow of the etch gas is stopped. FIG. 4G is a schematic cross-sectional view of the stack 400 after the features 411 have been etched into the silicon substrate 410 to define active areas.
The remaining hard mask layer 420 is removed (step 190). A normal organic layer stripping process, such as phosphoric acid (H3PO4) may be used. FIG. 4H is a schematic cross-sectional view of the stack 400 after the hard mask layer 420 has been stripped. Only the silicon substrate 410 with features remains.
In the above example, the opening of the bottom anti-reflection coating layer 430 and the hard mask layer 420 and the stripping of the photoresist layer 440 and the bottom anti-reflection coating layer 430 after the hard mask layer 420 is opened are performed in-situ, i.e., in the same plasma processing chamber. The etching of the silicon substrate 410 and the stripping of the hard mask layer 420 after the silicon substrate 410 is etched are performed elsewhere in separate equipments. Alternatively, in another example, all five steps, the opening of the bottom anti-reflection coating layer 430 (step 140), the opening of the hard mask layer 420 (step 150), the stripping of the remaining photoresist layer 440 and bottom anti-reflection coating layer 430 (step 160), the etching of the silicon substrate 410 (step 180), and the stripping of the hard mask layer 420 (step 190), may be done in-situ.
The present invention applies to various types of etching processes, such as via etching and trench etching. The present invention has many benefits. For example, it has been found that not using a low frequency RF power or using only a small amount of the low frequency RF power during the stripping of the photoresist layer after opening the hard mask prevents the hard mask from top corner rounding or faceting. The reduction of faceting of the hard mask has been found to reduce faceting of the etched features. Higher frequency RF plasma ashing provides higher efficiency in removing polymer deposits from the sidewall of the etched features in the hard mask layer.
It has also been found that this example extends mean time between cleanings. After each hard mask open process, waferless cleaning of chamber with oxidation chemistry is performed to keep the inside of reactor clean. During the cleaning, fluorine-containing polymer deposits accumulated on reactor wall after HMO processes are removed. Although waferless cleaning is performed after every wafer, wet cleaning is required periodically by dissembling the reactor parts and scrubbing the contaminants from the surfaces of reactor parts using liquid solvents. In-situ stripping of the photoresist layer extends the mean time between wet cleaning because both stripping and cleaning use the same oxidation chemistry. Consequently, the possibility of particle issues caused by polymer flakes peeled off from reactor wall surfaces is reduced.
While this invention has been described in terms of several preferred embodiments, there are alterations, permutations. modifications, and various substitute equivalents, which fall within the scope of this invention. It should also be noted that there are many alternative ways of implementing the methods and apparatuses of the present invention. It is therefore intended that the following appended claims be interpreted as including all such alterations, permutations, and various substitute equivalents as fall within the true spirit and scope of the present invention.

## Claims

1. A method for etching features in a silicon layer, comprising
forming a hard mask layer over the silicon layer, wherein the hard mask layer is silicon-based, wherein the forming the hard mask layer comprises:
forming a first layer over the silicon layer, wherein the first layer is Si3N4; and
forming a second layer over the first layer, wherein the second layer is SiO2;

forming a photoresist layer over the hard mask layer;
opening the hard mask layer; and
stripping the photoresist layer, comprising
providing a stripping gas;
forming a plasma with the stripping gas by providing a high frequency RF power with a frequency greater than or equal to 27 MHz and a low frequency RF power with a frequency less than 20 MHz, wherein the low frequency RF power has a power less than 50 watts; and
stopping the stripping gas when the photoresist layer is stripped.

2. The method, as recited in claim 1, wherein the opening the hard mask layer and the stripping the photoresist layer are performed in a same chamber.

3. The method, as recited in claim 2, wherein the low frequency RF power has a power of 0 watt.

4. The method, as recited in claim 3, wherein the high frequency RF power has a power between approximately 200 watts and 800 watts.

5. The method, as recited in claim 4, wherein the opening the hard mask layer comprises
providing an opening gas;
forming a plasma with the opening gas by providing a high frequency RF power and a low frequency RF power; and
stopping the opening gas when the hard mask layer is opened.

6. The method, as recited in claim 5, further comprising:
forming a bottom anti-reflection coating layer over the hard mask layer and under the photoresist layer;
opening the bottom anti-reflection coating layer; and
stripping the bottom anti-reflection coating layer.

7. The method, as recited in claim 6, wherein the opening the bottom anti-reflection coating layer, the opening the hard mask layer, the stripping the bottom anti-reflection coating layer, and the stripping the photoresist layer are performed in a same chamber.

8. The method, as recited in claim 6, wherein the stripping the bottom anti-reflection coating layer comprises:
providing a stripping gas;
forming a plasma with the stripping gas by providing a high frequency RF power and a low frequency RF power, wherein the low frequency RF power has a power less than 50 watts; and
stopping the stripping gas when the bottom anti-reflection coating layer is stripped.

9. The method, as recited in claim 5, further comprising:
etching the silicon layer; and
stripping the hard mask layer.

10. The method, as recited in claim 5, wherein the forming a plasma with the opening gas for opening the hard mask layer comprises providing a high frequency RF power between 150 and 800 watts and providing a low frequency RF power between 300and 1200 watts.

11. The method, as recited in claim 3, wherein the high frequency RF power has a power of approximately 300 watts.

12. The method, as recited in claim 1, wherein the stripping gas comprises at least one gas selected from the group consisting of O2, N2, and H2.

13. The method, as recited in claim 12, wherein the stripping gas further comprises halogen.

14. The method, as recited in claim 1, wherein the silicon layer is a silicon wafer.

15. A method for etching features in a silicon layer, comprising
forming a hard mask layer over the silicon layer;
forming a bottom anti-reflection coating layer over the hard mask layer;
forming a photoresist layer over the bottom anti-reflection coating layer;
opening the bottom anti-reflection coating layer;
opening the hard mask layer;
stripping the bottom anti-reflection coating layer comprising; and
providing a stripping gas;
forming a plasma with the stripping gas by providing a high frequency RF power with a frequency greater than or equal to 27 MHz and a low frequency RF power with a frequency less than 20 MHz, wherein the low frequency RF power has a power less than 50 watts; and
stopping the stripping gas when the photoresist layer is stripped;

stripping the photoresist layer, comprising
providing a stripping gas;
forming a plasma with the stripping gas by providing a high frequency RF power with a frequency greater than or equal to 27 MHz and a low frequency RF power with a frequency less than 20 MHz, wherein the low frequency RF power has a power less than 50 watts; and
stopping the stripping gas when the photoresist layer is stripped.

16. The method, as recited in claim 15, wherein the opening the bottom anti-reflection coating layer, the opening the hard mask layer, the stripping the bottom anti-reflection coating layer, and the stripping the photoresist layer are performed in a first chamber.

17. The method, as recited in claim 16, further comprising
etching the silicon layer; and
stripping the hard mask layer,
wherein the etching the silicon layer and the stripping the hard mask layer are preformed in a second chamber.

18. The method, as recited in claim 15, wherein the low frequency RF power has a power of 0 watt.