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| 12.4.2019 | EN | Official Journal of the European Union | L 103/60 |

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Corrigendum to Commission Delegated Regulation (EU) 2018/1922 of 10 October 2018 amending Council Regulation (EC) No 428/2009 setting up a Community regime for the control of exports, transfer, brokering and transit of dual-use items

(
[Official Journal of the European Union L 319 of 14 December 2018](http://publications.europa.eu/resource/oj/JOL_2018_319_R_TOC)
)

On page 129, under item 3B001.f, points 3 and 4, the alignment of points is corrected:

for:

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| ‘3. | Equipment specially designed for mask making having all of the following: | | | | --- | --- | | a. | A deflected focussed electron beam, ion beam or “laser” beam; and | | | | | | | | | | | | | | | | | | | | | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | | b. | Having any of the following: | | | | --- | --- | | 1. | A full-width half-maximum (FWHM) spot size smaller than 65 nm and an image placement less than 17 nm (mean + 3 sigma); or | | | | | --- | --- | | 2. | Not used; | | | | | --- | --- | | 3. | A second-layer overlay error of less than 23 nm (mean + 3 sigma) on the mask; | | | | | | | | | | | | | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | | 4. | Equipment designed for device processing using direct writing methods, having all of the following: | | | | --- | --- | | a. | A deflected focused electron beam; and | | | | | | | | | --- | --- | --- | --- | --- | --- | | b. | Having any of the following: | | | | --- | --- | | 1. | A minimum beam size equal to or smaller than 15 nm; or | | | | | --- | --- | | 2. | An overlay error less than 27 nm (mean + 3 sigma);’, | | | | |

read:

| | | | | | | | | | | | | | | | | | | | | | |
| --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- |
| ‘3. | Equipment specially designed for mask making having all of the following: | | | | --- | --- | | a. | A deflected focussed electron beam, ion beam or “laser” beam; and | | | | | | | | | | | | | | | | | | | | | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | | b. | Having any of the following: | | | | --- | --- | | 1. | A full-width half-maximum (FWHM) spot size smaller than 65 nm and an image placement less than 17 nm (mean + 3 sigma); or | | | | | --- | --- | | 2. | Not used; | | | | | --- | --- | | 3. | A second-layer overlay error of less than 23 nm (mean + 3 sigma) on the mask; | | | | | | | | | | | | | --- | --- | --- | --- | --- | --- | --- | --- | --- | --- | | 4. | Equipment designed for device processing using direct writing methods, having all of the following: | | | | --- | --- | | a. | A deflected focused electron beam; and | | | | | | | | | --- | --- | --- | --- | --- | --- | | b. | Having any of the following: | | | | --- | --- | | 1. | A minimum beam size equal to or smaller than 15 nm; or | | | | | --- | --- | | 2. | An overlay error less than 27 nm (mean + 3 sigma);’. | | | | |

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