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Center for Electronics and

Electrical Engineering

Technical

Progress

Bulletin

Covering Center Programs,

October to December 1987

with 1988 CEEE Events Calendar

June 1988

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899

IC -

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J56

m1988

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INTRODUCTION TO JUNE 1 988 ISSUE OF THE CEEE TECHNICAL PROGRESS BULLETIN

This is the twenty-first issue of a quarterly publication providing information on

the technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. Ihis issue of the CEEE Technical Progress Bulletin covers

the fourth quarter of calendar year 1987.

Organization of Bulletin : Ihis issue contains abstracts for all Center papers re- leased for publication by NBS in the quarter and citations and abstracts for Center

papers published in the quarter. Entries are arranged by technical topic as identified in the table of contents and alphabetically by first author under each subheading within each topic. Unpublished papers appear under the subheading "Released for

Publication". Papers published in the quarter appear under the subheading "Recently

Published". Following each abstract is the name and telephone number of the individual to contact for more information on the topic (usually the first author) . This

issue also includes a calendar of Center conferences and workshops planned for calendar year 1988 and a list of sponsors of the work.

Center for Electronics and Electrical Engineering : Center programs provide national

reference standards, measurement methods, supporting theory and data, and traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U. S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor Technology Program, carried out by the Semiconductor Electronics Division in Gaithersburg, MD, and the Signals and Systems Metrology Program, carried out by the Electrosystems Division in Gaithersburg and the Electromagnetic Fields and Electromagnetic

Technology Divisions in Boulder, CO. Key contacts in the Center are given on the

back cover; readers are encouraged to contact any of these individuals for further

information. To request a subscription or for more information on the Bulletin , write to CEEE Technical Progress Bulletin, National Bureau of Standards, Metrology

Building, Room B-358, Gaithersburg, MD 20899 or call (301) 975-2220.

Center sponsors : The Center Programs are sponsored by the National Bureau of Standards and a number of other organizations, in both the Federal and private sectors;

these are identified on page 35.

Note on Publication Lists : Guides to earlier as well as recent work are the publication lists covering the work of each division. These lists are revised and reissued

on an approximately annual basis and are available from the originating division.

The current set is identified in the Additional Information section, page 34.
CEEE Technical Progress Bulletin - June 1988

TABLE OF CONTENTS

INTRODUCTION

SEMICONDUCTOR TECHNOLOGY PROGRAM

Research Informatiom Center

National Bureau of Standards

Gaithersburg, Maryland 20899

Page 1 0~Uoo

. • , inside front cover

Silicon Materials 2 Gallium Arsenide Materials 2 Analysis Techniques 3 Dimensional Metrology 3 Packaging 4

Integrated Circuit Test Structures 5 Power Devices 7

Device Physics and Modeling 8

Radiation Effects 10

Insulators and Interfaces 11

Photodiodes 11

Other Semiconductor Metrology Topics 11

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 11

Waveform Metrology 11

Cryoelectronic Metrology 14

Antenna Metrology 10

Laser Metrology 18

Noise Metrology 19

Microwave and Mil lime ter-Wave Metrology 19

Optical Fiber Metrology 22

Electro-Qptic Metrology 23

Other Fast Signal Topics 24

ELECTRICAL SYSTEMS 25

Power Systems Metrology 25

Superconductors 26

Magnetic Materials and Measurements ..29

ELECTROMAGNETIC INTERFERENCE 30

Radiated Electromagnetic Interference 30

Conducted Electromagnetic Interference 34

ADDITIONAL INFORMATION 34

1988 CEEE CALENDAR 3 5 SPONSOR LIST 3 5 KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 2 CEEE Technical Progress Bulletin - June 198R

SBtlCONDOCTOR TECHNOLOGY

Silicon Materials

Recently Published

Carver, G.P. , Kang, S.S., Ehrstein,

J.R., and Novotny, D.B., Well-Defined

Contacts Produce Accurate Spreading

Resistance Measurements, Journal of

the Electrochemical Society, Vol. 1 34,

No. 11, pp. 2878-2882 (November 1987).

Values of silicon resistivity calculated

from spreading resistance measurements

agree with values of resistivity determined from four-point probe measurements

over a range of dopant density from 9 x 10^^ to 2 X 10^^ cm” 3 ^ spreading

resistance resistivity values were determined solely using a mathematical

expression based upon a simple geometrical model, without the need for a separate calibration. Ihe measurements were

made using aluminum- silicon contacts

having a well-defined geometry. Arrays

of such contacts were also used to characterize local resistivity variations.

Two-contact spreading resistance mea- surements are shown to underestimate the

amplitude of resistivity variations

compared to one-contact measurements.

[Contact: Gary P. Carver, (301)

975-2091

]

Polak-D ingels, P. , Burdge, G. , Lee, Chi

H., Seabaugh, A.C., Brundage, R.T.,

Bell, M.I., and Albers, J. , An Investigation of Photoconductive Picosecond

Microstripline Switches on SelfImplanted Silicon on SapfAiire (SOS)

,

Picosecond Electronics and Optoelectronics II, F.J. Leonberger, C.H. Lee,

F. Capasso, and H. Morkoc, Eds.

( Springer-Verlag, 1987), pp. 232-236.

[Conference Proceedings of the 2d

Topical Meeting on Picosecond

Electronics and Optoelectronics,

Incline Village, Nevada, January 14-16,

1 987]

Silicon-on-sapphire (SOS) switches,

damaged by implantation with 270-keV Si

ions at fluence levels of 10^2 to 2 x

1 5 cm 2^ have been characterized by

picosecond cross-correlation, Raman, and

resistivity measurements. Response

times as short as 9 ps were measured for

an implant dose of 10^*+. Raman measurements indicate amorphous silicon is not

formed until the dose reaches 2 x 10 ^^ cm”2^ but there is no further decrease

in response time at the higher doses.

Ihe resistivity peaks at the same dose

level at which the minimum response time

is observed, and then decreases for

higher dose. The mobility decreases

monotonically with increasing 'implant

dose. We find the optimum implantation

condition is one that produces heavy

damage in the material without fully

amorphizing the silicon. Amorphization

decreases the on/off ratio of the device

through reduction of both dark resistance and mobility, without increasing

the speed of the device.

[Contact: Michael I. Bell, (301)

975-2044]

Gallium Arsenide Materials

Released for Publication

Lowney, J.R., and Kahn, A.H., ValenceBand Effective Masses of GaAs.

The density of states effective masses

for the heavy-hole, light-hole, and

split-off valence bands of GaAs have

been calculated as a function of energy

in each band. The calculations are

based on the theory of Dresselhaus, Kip,

and Kittel with matrix elements determined by the method of Cardona. The

most recent values for these matrix

elements are used. Provision has been

made for the effect of the split-off

energy on the matrix elements of the

split-off band. The results show

important nonparabolicities which should

be taken into account in modeling the

valence band.

[Contact: Jeremiah R. Lowney, (301)

975-2048]

Recently Published

Forman, R.A., Hill, J.R., Bell, M.I.,
CEEE Technical Progress Bulletin - June 1988 Page 3

Galliiim Arsenide Materials (cont'd.)

White, G.S., Freiman, S.W., and Ford,

W . , Strain Patterns in Gallium Arsenide Wafers: Origins and Effects,

Proceedings of the International

Symposium on Defect Recognition and

Image Processing in III-V Compounds

(DRIP 1987), Monterey, California,

April 27-29, 1987, E.R. Weber, Ed.

(Elsevier vScience Publishers B.V. , Amsterdam, 1987), pp. 63-71.

Using the rapid x-ray topographic system

described earlier (in the Proceedings of

DRIP I), we have examined a large number

of LEC GaAs wafers, both commercial and

research, and have been able to identify

the sources of some of the observed patterns. We have also studied the effects

of the inhomogeneous strain on the fracture properties of the wafers. The high

gradients of strain cause deviations

from expected crack growth behavior in

fracture tests. These deviations

include crack velocity variations and

crack tip deflections. The grown-in

defects cause point-to-point irreproducibility in hardness and toughness values

for this material. Sequential wafers

exhibit closely related topographs and

similar fracture properties. Inclusions

have been identified in indi\m-doped

wafers and produce a characteristic

topographic pattern when the inclusion

lies in the wafer under study. A characteristic strain pattern propagates

away from the inclusion and produces

annular rings in later wafers. The

relaxation of the bow-tie strain pattern

surrounding the inclusion to the annular

ring pattern is likely related to the

thermoelastic stress patterns described

by Jordan et al.

[Contact: James R. Hill, (301)

975-2049]

Analysis Techniques

Released for Publication

Jach, T. , Novotny, D.B., Carver, G.P. , Geist, J. , and Spal, R.D., An X-Ray

Monochr<Miatx>r Crystal Which Detects the

Bragg Condition, to be published in

Nuclear Instrumentation and Methods in

Physics Research.

We have fabricated a (111) silicon x-ray

monochromator crystal with a diode diffused into its surface. Without suffering any apparent degradation in its

rocking-curve width at the Bragg condition, the crystal provides a dc current

which changes dramatically at the diffraction of a monochromatic x-ray beam.

The current change is directly attributable to extinction at the Bragg angle.

It provides a new means to align the two

crystals of a double-crystal x-ray

monochromator using a feedback circuit.

[Contact: Donald B. Novotny, (301)

975-2699]

Recently Published

Bouldin, C.E., Forman, R.A., and Bell,

M.I., Silicon Photodiode for Fluorescence EXAFS , Review of Scientific

Instruments, Vol. 58, No. 10, pp.

1891-1894 (October 1987).

A large-area silicon diode is used as a fluorescence detector for extended x-ray

absorption fine structure (EXAFS) measurements. A direct comparison of this

diode detector relative to a gas ionization fluorescence detector is made.

Advantages of the diode detector

include: higher signal for a given

photon flux (due to higher quantum

efficiency) , vacuum and cryogenic com- patibility, freedom from microphonic

noise, good linearity, extremely wide

dynamic range, operation without high

voltage or gas connections, very simple

electronics, and low cost. A brief

comparison with other detection methods

for fluorescence EXAFS is given. Use of

photodiodes for transmission EXAFS is

discussed.

[Contact: Charles E. Bouldin, (301)

975-2046]

Dimensional Metrology

Recently Published

Galloway, K.F., Diehl, S.E., and Lin-
Page 4 CEEE Technical Progress Bulletin - June 1988

Dimensional Metrology (cont'd.)

holm, L.W., Metrological Challenges

in Semiconductor Technology: Electrical Measurements of Dimensions and

Materials Properties Using Integrated

Circuit Test Structures, Proceedings

of the International Conference on

Semiconductor & Integrated Circuit

Technology, Beijing, China, October

1 9-26, 1 986, W. Xiuying and M,

Vangxian, Eds., pp. 685-687 (World

Scientific Publishers, PTE Ltd.,

Singapore, 1986).

The effective characterization and con- trol of the materials, processes, devices, and circuits for very-large-scale

integration (VLSI) is a major concern

for semiconductor technology development. This paper reviews the types of

metrological requirements associated

with VLSI semiconductor technology and

examines dimensional measurements and

materials characterization at the wafer

or chip level. Integrated circuit test

structures for electrical measurements

of dimensions and material properties

are described.

[Contact: Loren W. Linholm, (301)

975-2052]

Nyyssonen, D. , Computer Software for

the Computation of the Scattered Field

and the Optical Microscope Image of

Line Objects Patterned in Thick

Layers, NBSIR 87-3618 (December

1 987) . This report provides computer software

for calculating optical microscope

images of line objects patterned in

thick layers (>X/4 thick). The

algorithms used are based on a monochromatic, waveguide model which can

predict the images of line objects with

arbitrary edge geometry, including

multilayer structures with sloped,

curved, asymmetric, and undercut edges.

Along with the computer software

listing, the mathematics of the model, a short description of its structure and

use, and test cases for help in

implementation are given.

[Contact: Robert D. Larrabee, (301)

975-2298]

Postek, M.T., Low Accelerating Voltage

Pitch St€uidard Based on the Modification of NBS SRM 484, NBSIR 87-3665

(Oc tober 1 987)

Ihe National Bureau of Standards is

actively developing micrometer and submicrometer standards for the scanning

electron microscope (SEM). This report

summarizes the progress made to extend

the imaging range of the presently

available SRM 484 for use as an interim

standard for low-accelerating- voltage

magnification calibration applications

for the SEM.

[Contact: Michael T. Postek, (301)

975-2299]

Postek, M.T., Resolution and Measurement in the Scanning Electron Microscope, Proceedinqs of the 45th Annual

Meeting of the Electron Microscope

Society of America, G.W. Bailev, E5 . , pp. 534-537 (October 1987).

The terms ultimate resolution or resolving power refer to the very best performance that can be obtained from a scanning electron microscope (SEM) given

the optimum instrumental conditions and

sample. However, as it relates to SEM

users, the conventional definitions of

this figure are ambiguous. The numbers

quoted for the resolution of an instrument are not only theoretically derived,

but are also verified through the direct

measurement of images on micrographs.

However, the samples commonly used for

this purpose are specifically optimized

for the measurement of instrument resolution and are most often not typical of

the sample used in practical applications.

[Contact: Michael T. Postek, (301)

975-2299]

Packaging

Recently Published

Harman, G.G. , Acoustic Eltiission Test
CEEE Technical Progress Bulletin - June 1988 Page S Packaging (cont'd.)

for Microelectxonic Tape Autcxnated

Bonding, Acoustic Bmission Otiermal

Shock Test for Hybrid Microcircuit

Packages, and Designing Microelectronic Welds for Acoustic Bnission

Testability, Parts 4 , 5 , and 9, Sec,

1 1 , Vol. 5, Second Edition, Nondestructive Testing Handbook, P.

Mclntire, Ed., pp. 361 et seq. (American Society for Nondestructive Testing,

1 987) .

In Part 4, an acoustic-emission (AE)

test method for tape automated bonding

(TAB) integrity is presented, consisting

of a precision testing machine that

simultaneously applies a clamping force

on the semiconductor chip and a lifting

force on the electrical interconnecting

leads. Acoustic-emission signals are

transmitted through a waveguide to the

detector. The system also permanently

forms (raises) the leads, which is a normal requirement for TAB devices.

Large acoustic-emission signals occur

when a lead breaks, a bump lifts, or a weld crack propagates. Appropriate AE

signal processing is also discussed.

Part 5 describes an acoustic-emissionmonitored test for hybrid microcircuit

package integrity which consists of a hot stage operating at 400°C, a special

water-cooled acoustic-emission detector

mount, and appropriate signal recording

equipment. In use, the detector is

coupled to the back of a hybrid package

and both are set on the hot stage for

approximately 30 s. Any acoustic-emission signals indicate thermal excursion

damage to the glass-metal seals. The

acoustic-emission signals were correlated with both room- temperature and

1 25°C leak tests of the packages.

Finally, in Part 9, development of tests

to detect poor welds in microelectronic

components is discussed. Failure modes

must be understood, and this is done by

understanding the characteristics of

unacceptable welds,

[Contact: George G. Harman, (301)

975-2097]

Integrated Circuit Test Structures

Released for Publication

Buehler, M.G., Linholm, L.W., Tyree,

V.C., Allen, R.A., Blaes, B.R., Hicks,

K. A., and Jennings, G.A., Proposed

End-of-Fabrication Parametric Test

Structures for the CMOS Process Monitor, to be published as Jet Propulsion Laboratory Report #D-4520.

This document describes a proposed endof-f abrication CMOS Process Monitor for

VHSIC/VLSI Wafer Fabrication Qualification. The discussion of the CMOS

Process Monitor includes a description

of the test structures, test methods,

and data analysis techniques needed to

acquire 26 key electrical parameters

that characterize a CMOS process. This

process monitor has been under

development for a number of years at

JPL's VLSI Technology Group and the

University of Southern California/Information Sciences Institute MOSIS

Project.

[Contact: Loren W. Linholm, (301)

975-2052]

Kim, J.S., Linholm, L.W., Earley, B.L,,

Hanes, M.H. , and Cresswell, M.W., A

Microelectronic Test Structure for

Thickness Determination of Homogeneous

Conducting Thin Films in VLSI Processing, to be published in tbe Proceedings of the 1988 IEEE Conference on Microelectronic Test Structures, Long

Beach, California, February 22-23,

1 988.

This paper describes a new test structure for use in determining the thickness of a uniform conductinq film. The

structure incorporates the van der Pauw

cross method to determine the effective

sheet resistance of a vertical, uniformly doped cross section of a polysilicon

film and a bridge resistor to determine

the thickness of the film. By using a composite structure, which consists of

the vertical cross structure and a conventional planar cross-bridge test

structure, it is possible to obtain the
Page 6 CEEE Technical Progress Bulletin - June 1988

IC Test Structures (cont'd.)

thickness, linewidth, and resistivity of

a conducting line.

[Contact: Jin S. Kim, (301) 975-2238]

Linholm, L.W., Khera, D. , Reeve, C.P. , and Cresswell, M.W., A Developmental

Expert System for Test Structure Data

Evaluation, to be published in the

Proceedings of the 1988 IEEE Conference

on Microelectronic Test Structures,

Long Beach, California, February 22-23,

1 988.

This paper describes a developmental

expert system, rule generation

techniques, a test chip, data handling

methods, and statistical data reduction

techniques for characterizing the

performance of a 1-ym lithography

process. Examples of test results and

an expert system diagnosis are given.

[Contact: Loren W. Linholm, (301)

975-2052]

Schafft, H.A., and Albers, J. , Tfiermal

Interactions Between ElectrcMiiigration

Test Structures, to be published in

the Proceedings of the 1 988 IEEE

Conference on Microelectronic Test

Structures, Long Beach, California,

February 22-23, 1988.

The thermal interaction between electromigration test structures on a test

chip, when subjected to a high currentdensity stress, must be considered when

making median- time-to-failure measurements.

[Contact: Harry A. Schafft, (301)

975-2234]

Suehle, J.S., and Galloway, K.F.,

Switching Time Degradation in

Synchronously Stressed Trcinsmission

Gates.

When subjected to synchronous timing

pulsed stress, the hot-carrier response

of n-channel transistors in CMOS and

NMOS transmission gates is different.

Due to the circuit configuration,

hot-carrier-induced charge builds up at

both the source and the drain regions of

the n-channel transistor. The charge is

asymmetric for the NMOS transmission

gate and nearly symmetric for the CMOS

case. During stress, the growth of the

symmetrical charge distribution in the

CMOS transmission gate becomes

self-limiting and suppresses further

device degradation.

[Contact: John S. Suehle, (301)

975-2247]

Suehle, J. S . , and Galloway, K.F., Test

Circuit Structures for Characterizing

the Effects of Localized Hot-CarrierInduced Charge in VLSI Switching Circuits, to be published in the Proceedings of the 1988 IEEE Conference on

Microelectronic Test Structures, Long

Beach, California, February 22-23,

1 988.

Data are presented that were collected

from test circuit structures that were

hot-carrier stressed under conditions

existing in actual VLSI switching circuits. It is shown that the localized

nature of hot-carrier induced damage to

n-channel MOSFETs must be considered to

accurately model these data by computer

circuit simulations.

[Contact: John S. Suehle, (301)

975-2247]

Recently Published

Galloway, K.F., Diehl, S.E., and Linholm, L.W., Metrological Challenges

in Semiconductor Technology: Electrical Measurements of Dimensions and

Materials Properties Using Integrated

Circuit Test Structures, Proceedings

of the International Conference on Semiconductor & Integrated Circuit

Technology, Beijing, China, October

1 9-26 , 1 986 , W. Xiuying and M.

Vangxian, Eds. (World Scientific

Publishers, PTE Ltd., Singapore, 1986),

pp. 685-687.

The effective characterization and con- trol of the materials, processes, devices, and circuits for very- large- scale

integration (VLSI) is a major concern
CEEE Technical Progress Bulletin - June 1988 Page 7

IC Test Structures (cont'd.)

for semiconductor technology development. This paper reviews the types of

metrological requirements associated

with VLSI semiconductor technology and

examines dimensional measurements and

materials characterization at the wafer

or chip level. Integrated circuit test

structures for electrical measurements

of dimensions and material properties

are described.

[Contact: Loren W. Linholm, (301)

975-2052]

Schafft, H.A., Electromigration Guidelines for ^ Measurements, Final

5 0

Report of the 1986 Workshop on Wafer

Reliability Assessment, O.D. Trapp,

Ed., Lake Tahoe, California, October

1 9-22, 1986, pp. 1 49-161 (1 987).

Guidelines for designing electromigration test structures and test procedures

are proposed. These guidelines are

intended to promote the reproducibility

of electromigration characterizations of

metallizations used in VLSI circuits.

[Contact: Harry A. Schafft, (301)

975-2234]

Suehle, J.S., Russell, T.J. , and Galloway, K. F., Interface Trap Effects on

the Hot-Carrier-Induced Degradation of

MOSFETS During Dynamic Stress, IEEE

Transactions on Nuclear Science, Vol.

NS-34, No. 6, pp. 1 359-1 363 (1 987).

Foundry and hardened n-channel MOSFEIfe

were stressed with dynamic AC pulses and

with static DC voltages. The pre-radiation hot-carrier-induced degradation is

much more severe in the dynamic case

than in the static case for the hardened

devices. The data suggest that the

pre-radiation hot-carrier ' degradation is

strongly influenced by the relative

density of interface traps and by the

pulse structure. Ihe post-radiation

hot-carrier degradation is mainly influenced by the amount of radiation-induced

fixed oxide charge.

[Contact: John S. Suehle, (301)

975-2247]

Power Devices

Released for Publication

Blackburn, D.L. , A Review of Hiermal

Characterization of Power Transistors, to be published in the Proceedings of the IEEE Semiconductor Thermal

and Temperature Measurement (SEMITHERM) Symposium, San Diego, California, February 10-1 2, 1988.

The thermal characteristics of power

transistors and their measurement are discussed. Topic areas addressed

include general methods for measuring

device temperature, control of the

thermal environment, selection of a temperature-sensitive electrical parameter, measurement of temperature-sensitive electrical parameters, reasons for

measuring temperature, and temperature

measurement of integrated power devices.

Procedures for detecting nonthermal

switching transients, extrapolation of

the measured temperature to the instant

of switching, and for measuring the

temperature of Darlington transistors

are included.

[Contact: David L. Blackburn, (301)

975-2068]

Hefner, A.R., and Blackburn, D.L., An

Analytical Model for the Steady-State

and Transient Characteristics of the

Power Insulated Gate Bipolar Transistor.

An analytical model for the power Insulated Gate Bipolar Transistor (IGBT) is

developed. The model predicts the IGBT

steady-state current-voltage characteristics and switching transient current

and voltage waveforms for all practical

loading conditions. The model is based

on the equivalent circuit of a MOSFET

which supplies the base current to a low-gain, high-level injection, bipolar

transistor with its base virtual contact

at the collector end of the base. The

basic element of the model is a detailed

analysis of the bipolar transistor which

uses ambipolar transport theory and does

not assume a quasi-static condition for
Page 8 CEEE Technical Progress Bulletin - June 1 98

Power Devices (cont'd.)

the transient analysis. This analysis

differs from the previous bipolar

transistor theory in that 1 ) the relatively large base current which flows

from the collector end of the base is

properly accounted for, and 2) the com- ponent of current due to the changing

carrier distribution under the condition

of a moving collector-base depletion

edge during anode voltage transitions is

accounted for. Experimental verification of the model using devices with

different base lifetimes is presented

for the on-state current-voltage characteristics, the steady-state saturation

current, and the current and voltage

waveforms for the constant voltage

transient, the inductive load transient,

and the series resistor-inductor load

transient.

[Contact: Allen R. Hefner, (301)

975-2071

]

Hefner, A.R., Blackburn, D.L., and

Galloway, K. F., A Steady-State Model

for the Insulated Gate Bipolar Transistor, to be published in the Proceedings of the Fourth International Workshop on Physics of Semiconductor Devices, Madras, India, December 10-15,

1 987.

The power Insulated Gate Bipolar Transistor (IGBT) is a switching device

designed to overcome the high on-state

loss of the power MOSFET. The IGBT

behaves as a bipolar transistor which is

supplied base current by a MOSFET. The

bipolar transistor of the IGBT has a wide base with the base contact at the

collector edge of the base and is

operated with its base in high-level

injection. The usual bipolar transistor

models are not adequate for the IGBT.

This paper describes a model for the

IGBT developed using eimbipolar transport.

[Contact: Allen R. Hefner, (301)

975-2071]

Device Physics and Modeling

Released for Publication

Hefner, A.R., and Blackburn, D.L. , An

Analytical Model for the Steady-State

and Transient Characteristics of the

Power Insulated Gate Bipolar Tramsistor.

An analytical model for the power Insulated Gate Bipolar Transistor (IGBT) is

developed. The model predicts the IGBT

steady-state current-voltage characteristics and switching transient current

and voltage waveforms for all practical

loading conditions. The model is based

on the equivalent circuit of a MOSFET

which supplies the base current to a low-gain, high-level injection, bipolar

transistor with its base virtual contact

at the collector end of the base. The

basic element of the model is a detailed

analysis of the bipolar transistor which

uses ambipolar transport theory and does

not assume a quasi-static condition for

the transient analysis. This analvsis

differs from the previous bipolar

transistor theory in that 1 ) the relatively large base current which flows

from the collector end of the base is

properly accounted for, and 2) the com- ponent of current due to the changing

carrier distribution under the condition

of a moving collector-base depletion

edge during anode voltage transitions is

accounted for. Experimental verification of the model using devices with

different base lifetimes is presented

for the on-state current-voltage characteristics, the steady-state saturation

current, and the current and voltage

waveforms for the constant voltage

transient, the inductive load transient,

and the series resistor-inductor load

transient.

[Contact: Allen R. Hefner, (301)

975-2071

]

Hefner, A.R., Blackburn, D.L., and

Galloway, K.F., A Steady-State Model

for the Insulated Gate Bipolar Transistor, to be published in the Proceedings of the Fourth International Workshop on Physics of Semiconductor De-
CEEE Technical Progress Bulletin - June 1988 Page 9

Device Physics & Modeling (cont'd.)

vices, Madras, India, December 10-15,

1 987.

The power Insulated Gate Bipolar Transistor (IGBT) is a switching device

designed to overcome the high on- state

loss of the power MOSFET. The IGBT

behaves as a bipolar transistor which is

supplied base current by a MOSFET. The

bipolar transistor of the IGBT has a wide base with the base contact at the

collector edge of the base and is

operated with its base in high-level

injection. The usual bipolar transistor

models are not adequate for the IGBT.

This paper describes a model for the

IGBT developed using ambipolar transport.

[Contact: Allen R. Hefner, (301)

975-2071]

Gaitan, M., and Mayergoyz, I., Numerical Analysis for the Small-Signal

Response of the MOS Capacitor.

The small-signal sinusoidal steady-state

response of the MOS capacitor is simulated by solving the basic semiconductor

equations using time perturbation analysis. The effect of nonuniform doping

profiles, interface traps, and bulk

traps are included. The model uses

Fermi-Dirac statistics and ShockleyRead-Hall recombinations to describe the

traps. This analysis is an improvement

over previous analytical techniques

since it simulates the small-signal

response of the MOS capacitor through

its whole range of operation, including

the frequency-dependent inversion layer

response due to the traps.

[Contact: Michael Gaitan, (301)

975-2070]

Lowney, J.R., and Kahn, A.H., ValenceBand Effective Masses of GaAs.

The density of states effective masses

for the heavy-hole, light-hole, and

split-off valence bands of GaAs have

been calculated as a function of energy

in each band. The calculations are

based on the theory of Dresselhaus, Kip,

and Kittel with matrix elements determined by the method of Cardona. The

most recent values for these matrix

elements are used. Provision has been

made for the effect of the split-off

energy on the matrix elements of the

split-off band. The results show

important nonparabolicities which should

be taken into account in modeling the

valence band.

[Contact: Jeremiah R. Lowney, (301)

975-2048]

Recently Published

Bennett, H.S., Numerical Simulations

on Neutron Effects on Bipolar Transistors, IEEE Transactions on >Taclear

Science, Vol. NS-34, No. 6, pp.

1 372-1 375 (1 987)

A detailed device model that has been

verified by comparisons with experimental measurements on unirradiated, stateof-the-art bipolar devices has been

modified to include the effects of neutron radiation on carrier lifetimes,

concentrations, and mobilities. Numerical experiments on the degradation due

to neutron fluences in the dc common

emitter gains for bipolar transistors

with submicrometer emitter and base

widths are given and compared in general

terms with the few published measurements . [Contact: Herbert S. Bennett, (301)

975-2079]

Bennett, H.S., and Lowney, J. R., Physics for Models of Gallium Arsenide

Devices, Fundamental Research on the

Numerical Modellincr of Semiconductor

Devices and Processes, J.J.H. Miller,

Ed. (Boole, Dublin, 1987), pp. 31-36.

[Proceedings of NUMOS 1 , First International Workshop on the Numerical Modelling of Semiconductors, Los Angeles,

California, December 11-12, 1986.]

Numerically simulating the behavior of

GaAs devices requires a model for the

distorted densities of states, band edge

shifts, AEq and AEy, and effective
Page 1

CEEE Technical Progress Bulletin - June 1988

Device Physics & Modeling (cont'd.)

intrinsic carrier concentrations,

nj^g. The subscripts c and v denote

the conduction and valence bands,

respectively. Klauder's self-energy

methods (third-level and fifth-level)

are applied to calculate the effects of

carrier-dopant ion interactions on the

densities of states for GaAs . The

effects of carrier-carrier interactions

have been calculated according to the

theory of Abram et al. modified for 300

K. These calculations span most of the

range of densities encountered in GaAs

devices. This range is 5 x 10^^ cm“3 to

10^3 cmT^ for n-type GaAs and from 10^®

cm"^ to 10^^ cm”^ for p-type GaAs. We

present in this paper theoretical data

on how AE^, AE^, and n^g vary

with dopant densities. The variations

with dopant and/or carrier densities of

the distorted densities of states, Fermi

energies screening radii, and first Born

shifts will be given in a future publication.

[Contact: Herbert S. Bennett, (301)

975-2081]

Kim, J.S., The Effect of the Gate

Oxide Thickness on the Speed of MOS

Integrated Circuits, NBSIR 87-3668

(December 1 987)

A simple analysis is presented for the

effect of the gate oxide thickness on

the circuit speed in a short-channel

CMOS/inverter delay circuit. The present

analysis is performed within the

first-order theory of the MOS

transistor. The result of the analysis

shows that an optimum value of the gate

oxide thickness exists, beyond which a further scaling of the gate oxide will

not improve but degrade the circuit

speed. The circuit speed corresponding

to this optimum oxide thickness is the

ultimate upper limit theoretically

possible in a given MOS integrated

circuit. The optimum value of the gate

oxide thickness, to a first-order

approximation, is proportional to the

channel width W, but it is independent

of the channel length L. In particular.

for wide channel devices, this optimum

value exceeds the 5-nm to 30-nm ranae,

which is of practical significance in

the design and processing of advanced

VLSI circuits. At the optimum oxide

thickness, the square-root of the net

propagation delay is the sum of two

components: the square-root of a purely

parasitic component and the square-root

of a device-dependent component.

[Contact: Jin S. Kim, (301) 975-2238]

Radiation Effects

Recently Published

Singh, G. , Galloway, K.F., and Russell,

T.J. , Temperature Induced Rebound in

Power MOSFETs , IEEE Transactions on Nuclear Science, Vol. NS-34, No. 6, pp.

1 366-1 369 (1 987).

Enhancement mode n-channel power MOSFETs

were investigated for rebound. Thev

received 300 krad(Si) gamma dose under

positive gate bias with source and drain

grounded. The irradiated transistors

were thermally annealed with all terminals shorted or under positive gate bias

with drain and source shorted, at temperatures from 60°C to 1 50°C. Threshold

voltage rebound was observed for some

transistor types under certain experimental conditions.

[Contact: Thomas J. Russell, (301)

975-2073]

Suehle, J.S., Russell, T.J. , and Galloway, K.F., Interface Trap Effects on

the Hot-Carrier-Induced Degradation of

MOSFEPs During Dynamic Stress, IEEE

Transactions on Nuclear Science, Vol.

NS-34, No. 6, pp. 1 359-1 363 (1 987).

Foundry and hardened n-channel MOSFETs

were stressed with dynamic AC pulses and

with static DC voltages. The pre-radiation hot-carrier-induced degradation is

much more severe in the dynamic case

than in the static case for the hardened

devices. The data suggest that the

pre-radiation hot-carrier degradation is

strongly influenced by the relative

density of interface traps and by the
CEEE Technical Progress Bulletin - June 1988 Page 1

Radiation Effects (cont'd.)

pulse structure. The post-radiation

hot-carrier degradation is mainly influenced by the amount of radiation-induced

fixed oxide charge.

[Contact; John S. Suehle, (301)

975-2247]

Insulators and Interfaces

Recently Published

Baghdadi, A., and Walters, E.J. , Semiconductor Measurement Technology:

Silicon-on-Insulator: A Categorized

Bibliography Including Abstracts, NBS

Special Publication 400-80 (December

1 987) . This bibliography of silicon-on-insulator SOI technology was compiled from a literature search of three data bases;

INSPEC, Engineering Index, and Chemical

Abstracts. The bibliography has been

categorized according to the technique

used to produce the SOI substrate. It

includes the abstracts for most of the

papers. It can either be used to obtain

a quick evaluation of the "state of the

art" in a particular SOI technique, or

as a guide for further in-depth study.

[Contact: Aslan Baghdadi, (301)

975-2062]

Photodiodes

Recently Published

Korde, R., and Geist, J. , Quantum

Efficiency Steibility of Photodiodes,

Applied Optics, Vol. 26, pp. 5284-5290

(1 987) . The stability of the quantum efficiency

of inversion layer, phosphorus-diffused

(n_- conductivity type on p) and borondiffused (^ on _n) photodiodes has been

investigated. Unsatisfactory siliconsilicon dioxide interfaces, latent re- combination centers in the diffused

layers, and moisture absorption by the

device were identified as possible

causes of instability. Diodes were

fabricated using processes in which

these sources of instability were carefully controlled. The resulting diodes

were subjected to various accelerated

aging tests, and the external guantim

efficiency of the diodes was monitored

during the tests. Diodes made by older

procedures, in which some important

parameters affecting stability were not

controlled, were included in the study

for comparison. The major result of

this work is the demonstration that n on

p photodiodes are inherently more stable

than _p on n^ types in the ultraviolet and

blue spectral regions, but that stable p

on _n devices can also be produced with

sufficient care.

[Contact: Jon Geist, (301) 975-2066]

Other Semiconductor Metrology Topics

Recently Published

Sc ace, R.I., ASTM and SEMI Standards

for the Semiconductor Industry,

Emerging Semiconductor Technology, Vol.

ASTM STP-960, D.C. Gupta and P.H.

Danger, Eds., pp. 1 5-1 8 (1 987).

This article, based on an introductory

talk at the symposium, points out the

needs for standards in the semiconductor

industry and briefly describes the

activities of the organizations that

develop them. The direct cooperation

between the several organizations in the

world active in semiconductor standards

development is briefly described.

Readers are invited to join these

development activities.

[Contact; Robert I. Scace, (301)

975-2220]

FAST SIGNAL ACQUISITION, PROCESSING,

AND TRANSMISSION

Waveform Metrology

Released for Publication

Le edy , T. F . , and Be 1 1, B . A . , Concepts

for ATE Systems Calibration: Transport

Standards to Achieve Traceability to

National Standards, to be published
Page 12 CEEE Technical Progress Bulletin - June 1988

Waveform Metrology (cont'd.)

in the Proceedings of the 1 988 Measurement Science Conference, Long Beach,

California, January 28-29, 1988.

Technical objectives are presented for a proposed transport standard to establish

direct traceability of selected lowfrequency electrical quantities between

the National Bureau of Standards and

automatic test systems including the

calibration laboratories that support

these automatic test systems. The

transport standard would consist of

precision ac and dc voltage and frequency sources and could also include more

specialized measurement modules in

future versions. The transport standard

would allow the intercomparison of dc

voltage, ac (root-mean-square) voltage,

total harmonic distortion, phase, and

frequency measurements made using automatic test equipment systems.

[Contact: Thomas F. Leedy, (301)

975-241 0]

Peterson, R.L., and Oldham, N.M.,

Josephson ac Voltmeter.

A technique for accurate measurement of

ac voltages with Josephson junctions is

described. Based on the counting of

pulses generated by a Josephson

junction, the method may be capable of

precision at the ppm level for

frequencies less than 100 kHz.

[Contact: Robert L. Peterson, (303)

497-3750]

Simpson, P.A., Fast-Pulse Generators

and Detectors for Characterizing Laser

Receivers at 1,06 ym, to be published

in the Proceedings of SPIE - The International Society for Optical Engineering, P.O. Box 20, Bellingham, WA 98227

[conference, Los Angeles, California,

January 11-15, 1988].

A detector system is described which is

capable of measuring the waveform of

pulses used to calibrate laser receivers

at 1.06 ym. The risetime of the system

is 0.8 ns. All parts of the system are

available commercially. Also described

is an optical impulse generator at 1.06

ym with a risetime of less than 100 ps.

This impulse generator can be used to

measure the impulse response of the

detector system and of the laser

receiver.

[Contact: Philip A. Simpson, (303)

497-3789]

Turgel, R.S., Mulrow, J.M., and Vecchia,

D.F., NBS Phase Angle Calibration

Services, to be published as NBS

Special Publication 250-26.

The National Bureau of Standards (NBS)

offers a calibration service for audiofrequency phase meters. The calibrations are based on a phase angle standard developed at NBS that generates two

sinusoidal signals displaced relative to

each another by a precisely known phase

angle over a frequency range of 2 Hz to

50 kHz. The signal amplitudes are independently adjustable on each channel

from 0.5 V to 100 V. The angular resolution is better than 0.002° at the low

end of the frequency range and decreases

to 0.005° at the high end. The uncertainty of the phase angle between the

two signals generated by the standard

varies from 0.005° to 0.04°, depending

on frequency and amplitude.

Using the phase angle standard, phase

meter readings are obtained at selected

test points. From the calibration data,

the phase meter response characteristic

is determined and is compared to that of

an ideal meter having a linear characteristic. If the phase meter response

conforms to the linear model, a straight-line calibration curve is

derived from the data and serves to

calculate corrected readings. From the

statistical parameters associated with

the calibration curve, it is possible to

estimate the limits of offset between

the calibrated meter and the calibration

standard. By extension, the uncertainty

of readings of the phase meter in the

user' s laboratory can be estimated.

[Contact: Raymond S. Turgel, (301)

975-2420]
CEEE Technical Progress Bulletin - June 1988 Page 1

Waveform Metrology (cont'd.)

Recently Published

Laug, O.B., A Precision Power Amplifier for Power/Energy Calibration Applications, IEEE Transactions on

Instrument and Measurement, Vol. IM-36,

No. 4, pp. 994-1000 (December 1987).

[Proceedings of the IEEE Instrumentation and Measurement Technology Conference, Boston, Massachusetts, April

27-29, 1987, pp. 129-134.]

A precision power amplifier for use in

power/energy calibration applications is

described. The amplifier was primarily

designed to boost the output amplitude

of a digital generator to provide the

nominal 1 20- or 240-root-mean-square

(rms) voltage component of a "phantom"

calibration power source. The amplifier

has a fixed gain of 40 and can provide a maximum output voltage swing of 970 V

peak-to-peak or 340-V rms at 1 00-mA rms. The bandwidth is from dc to 150 kHz, and

at 60 Hz the observed no-load short-term

amplitude and phase instabilities are ±5

ppm and ±5 jjrad, respectively. The

amplifier design uses high-voltage

n-channel MOSFETs in the output driver

stage together with a unique circuit

topology of opto-isolators between the

low-level input stage and the high-level

output stage.

[Contact: Owen B. Laug, (301) 975-2412]

Nahman, N.S., Software Correction of

Measured Pulse Data, Fast Electrical

and Optical Measurements, Vol. 1, J.E.

Thompson and L.H. Luessen, Eds. (Martinus Nijhoff, Dordrecht, 1986), pp.

351-41 7.

The fundamental concern in the software

correction of measured pulse waveform

data is the solution of an ill-posed

deconvolution problem which arises when

one (or both) of the known waveforms is

(are) corrupted by errors due to interference, noise, instrumentation drift,

etc. The variables concerned are re- lated to each other by the convolution

integral. When one of the integrand

functions is unknown while the other two

functions are known, the convolution

equation becomes an integral equation

for the unknown waveform. Solution of

an ill-posed deconvolution problem is

obtained by signal processing or filtering and at most yields an estimate for

the unknown waveform. The objective of

this discussion is to bring out the

ideas of i 11-posedness and to give examples of applications to pulse measurement problems which require deconvolution, i.e., the removal (correction) of

pulse source effects and/or measurement

system effects as encountered in signal

pulse waveform measurements and system

impulse response measurements.

[Contact: William L. Cans, (303)

497-3538]

Oldham, N.M., Parker, M.E., Young, A.,

and Smith, A.G., A High-Accuracy, 10

Hz-1 MHz AutcMnatic AC Voltage Calibration System, IEEE Transactions on

Instrument and Measurement, Vol. IM-36,

No. 4, pp. 883-887 (December 1987).

[Proceedings of the IEEE Instrumentation and Measurement Technology Conference, Boston, Massachusetts, April

27-29, 1987, pp. 279-281.]

An automatic system for calibrating

high-accuracy ac voltmeters and calibrators is described. The system is based

on traditional coaxial thermal voltage

converters to provide ac voltage measurement uncertainties of 5 to 20 ppm in

the audiofrequency range and 5 to 250

ppm over the full range from 1 0 Hz to 1 MHz at voltages between 0.5 to 600 V.

Lower levels (0.01 to 0.5 V) are

realized using wideband inductive

dividers. Specialized hardware and

measurement techniques make it possible

to achieve these uncertainties in test

periods of approximately 1 min. Random

errors introduced by the measurement

system are typically less than 2 ppm

(one standard deviation)

[Contact: N. Michael Oldham, (301)

975-2408]

Souders, T.M., Schoenwetter, H.K. , and
Page 1

CEEE Technical Progress Bulletin - June 1988

Waveform Metrology (cont'd.

)

Hetrick, P.S., Characterization of a

Sampling Voltage Tracker for Measuring

Fast, Repetitive Signals, IEEE Transactions on Instrumentation and Measurement, Vol. IM-36, No. 4, pp. 956-960

(December 1987). [Proceedings of the

IEEE Instrumentation and Measurement

Technology Conference, Boston, Massachusetts, April 27-29, 1987, pp. 240-

243. ] An equivalent-time sampling and digitizing system is described, together with

test methods for characterizing its

dynamic performance. Time-base errors,

linearity errors, step response parameters, harmonic distortion, and frequency

response are considered, and typical

measurement results are included. The

system is capable of state-of-the-art

measurements for signal frequencies up

to 200 MHz

[Contact: T. Michael Souders, (301)

975-2406]

Stenbakken, G.N., Characterizing

Square and Triangular Waveforms

,

IEEE Transactions on Instrumentation

and Measurement, Vol. IM-36, No. 4, pp.

961-963 (December 1987). [Proceedings

of the IEEE Instrumentation and Measurement Technology Conference, Boston,

Massachusetts, April 27-29, 1987, pp.

9-11.]

A method has been developed for determining the parameters and errors of

square and triangular waveforms relative

to idealized waveforms, even when the

waveforms are highly distorted. The

method is based on measurements obtained

by sampling the waveform. An idealized

waveform is fitted to these sampled data

using a least-squared error algorithm.

The errors in the waveform are defined

as the deviations between the data sam- ples and the ideal waveform. Also, the

parameters of the measured waveform are

defined as the corresponding parameters

of the fitted ideal waveform.

[Contact: Gerard N. Stenbakken, (301)

975-2440]

Turgel, R.S., and Vecchia, D.F., Precision Calibration of Phase Meters,

IEEE Transactions on Instrumentation & Measurement, Vol. IM-36, No. 4, pp.

918-922 (December 1987). [Proceedings

of the IEEE Instrumentation and Measurement Technology Conference, Boston,

Massachusetts, April 27-29, 1987, pp.

1 35-1 37.

]

Using the calibration of a phase meter

with a nominally linear response as an

example, a statistical approach is discussed for predicting worst-case offsets

of the meter response characteristic

from the value of the reference standard. A linear calibration curve is

used to model the meter response, and

statistical tests are described which

test the appropriateness of the model

and whether the calculated calibration

curve differs significantly from the

ideal. Various levels of corrections to

be applied can then be determined on the

basis of these tests, and limits to

offsets are calculated for each of the

levels. By extending this approach, it

is possible to predict limits of uncertainty when using the calibrated meter

to make measurements.

[Contact: Raymond S. Turgel, (301)

975-2420]

Cryoelectronic Metrology

Released for Publication

Lloyd, F.L., Hamilton, C.A., and Kao,

C . , A 10 V Josei^ison Voltage Standard.

In the last several years, large arrays

of 2000 or more Josephson junctions have

been used in many laboratories to

generate reference voltages on the order

of 1 V. These devices can be used to

calibrate standard cells and other reference devices at the 1 -V level without

the use of a voltage divider. This has

resulted in substantial improvements in

accuracy and has greatly simplified the

operation of Josephson voltage standards. A series array of 15,000 to
CEEE Technical Progress Bulletin - June 1988 Page 1

Cryoelectronic Metrology (cont'd.)

20,000 junctions would extend the

inherent simplicity and accuracy of a direct calibration to the 1 0-V level

commonly used in precision zener-diode

reference standards. The first observation of Josephson steps at the 1 0-V

level used an array of 14,184 junctions.

The stability and large microwave power

requirements of this array made its use

as a practical standard marginal. This

paper describes an array with a modified

design which resolves the problems of

stability and power requirement. A

number of the new arrays have been suc- cessfully fabricated and more than 50

calibrations have been performed at the

1 0-V level.

[Contact: Frances L. Lloyd, (303)

497-3254 or 3988]

Peterson, R.L., and Oldham, N.M.,

Jose^ison ac Voltmeter.

A technique for accurate measurement of

ac voltages with Josephson junctions is

described. Based on the counting of

pulses generated by a Josephson

junction, the method may be capable of

precision at the ppm level for

frequencies less than 100 kHz.

[Contact: Robert L. Peterson, (303)

497-3750]

Xizhi, L. , Richards, R.L. , and Lloyd,

F.L., SIS Quasiparticle Mixers with

Bow-Tie Antennas.

We have designed and evaluated planar

lithographed W-band superconductor- insula tor- superconductor mixers with bow-tie

antennas and several different radio

frequency coupling structures. Both

Pb-alloy and Nb-Pb-alloy junctions were

used, each with coRnC >> 1. Single

junctions and series arrays of five

junctions directly attached to bow-tie

antennas with no additional coupling

structure gave poor performance, as expected. Single junctions with inductive microstrips and five- j unction

arrays with parallel wire inductors gave

good coupling over bandwidths of ==5 and

25 percent, respectively. Good agreement is found between design calculations based on a simple equivalent circuit and measurements of the frequency

dependence of the mixer gain. When good

coupling was achieved, typical values of

mixer gain Gj^^(DSB) 0 dB , noise

Tf^(DSB) 1 50 K, and receiver noise

-200 K were observed. These measurements are referred to the cryostat window. When corrected for the estimated

loss between the cryostat window and the

antenna terminals, these values of gain

are comparable to those observed for

W-band waveguide mixers with immediatefrequency matching, but the noise is

significantly higher. There is evidence

that the ~100 K radiation from the heat

shield surrounding the mixer reduces the

gain and increases the noise. No systematic difference is observed between

the performance of Pb( InAu) -Pb( Bi ) junctions and Nb-Pb(InAu) junctions when the

area of the latter is a factor of three

smaller and the current density is a factor of three larger to maintain the

same capacitance and resistance.

[Contact: Frances L. Lloyd, (303)

497-3254]

Recently Published

Kautz, R.L., Activation Energy for

Thermally Induced Escape from a Basin

of Attraction, Physics Letters A,

Vol. 125, No. 6,7, pp. 315-319

(November 23, 1987).

In the limit of low temperature, the

most probable path for escape from a basin of attraction is the path which

minimizes the available thermal noise

energy required for escape. This

minimum energy is the activation energy

of escape.

[Contact: Richard L. Kautz, (303)

497-3391 or -3988]

Kautz, R.L. , and Lloyd, F.L. , Precision of Series-Array Josephson Voltage Standards, Appl. Phys. Lett.

Vol. 51, No. 24, pp. 2043-2045 (December 1 987)
Page 1

CEEE Technical Progress Bulletin - June 198R

Cryoelectronic Metrology (cont'd.

)

Comparison of two series-array Josephson

voltage standards operated at over 1 V

shows that they differ in voltage by

less than two parts in 10^^.

[Contact: Richard L. Kautz, (303)

497-3391 or -3988]

Lloyd, F.L., Hamilton, C.A., Beall,

J.A., Go, D. , Ono, R.H, , and Harris,

R.E., A Josephson Array Voltage

Standard at 10 Volts, IEEE Electron

Device Letters, Vol. EDL-8, No. 10, pp,

449-450 (October 1987).

The technology of Josephson voltage

standards has been extended to an array

of 14,184 junctions which is capable of

generating over 150,000 quantized voltage levels spanning the range from -12

to +12 V. This makes possible the

direct calibration of 1 0-V zener reference standards without the use of a voltage divider.

[Contact: Frances L. Lloyd, (303)

497-3254/3988]

Antenna Metrology

Released for Publication

Lewis, R.L., and Newell, A.C., An

Efficient and Accurate Method for Calculating and Representing Power Density

in the Near Zone of Microwave Antennas.

An efficient and' reliable method has

been developed for computing and exhibiting Fresnel-region fields radiated by

microwave antennas using plane-wave

scattering-matrix analysis. That is, we

calculate near fields by numerically

integrating the complex far-field antenna pattern. The predicted near fields

are exhibited as relative power-density

contours lying in a longitudinal plane

bisecting the antenna' s aperture. With

spatial-coordinate scaling, each set of

contours becomes a function of the relative aperture distribution and the electrical size of the antenna. If the

latter is much larger than any normalized transverse coordinate of interest,

the contour set becomes invariant with

respect to antenna size. Thus, coordinate normalization can produce contours

applicable to any antenna with the sane

relative aperture distribution, regardless of antenna size.

The crux of the analysis consists of

handling a numerical instability which

arises from integrating discrete data.

A criterion is developed for excluding

highly oscillatory regions of the integrand. In turn, this leads to restrictions on the output range over which the

near-field computations are considered

valid. With the numerical instability

problem resolved, the fast Fourier

transform is used for efficient numerical integration. The predicted near

fields have been compared against both

measured and theoretical data, confirming that our near-field computation

algorithm is capable of extremely high

accuracy

[Contact: Richard L. Lewis, (303)

497-5196]

Newell, A.C., Development of NearField Test Procedures for Communication

Satellite Antennas, to be published

as NBSIR 87-3081

Near-field planar scanning measurement

techniques are developed for application

to communication satellite antennas.

Methods are described for determining

sampling criteria, scan limits, precise

beam alignment, and swept-f reguency

near-field data.

[Contact: Allen C. Newell, (303)

497-3743]

Newell, A.C., Error Analysis Techniques for Planar Near-Field Measurements.

The results of an extensive error analysis on antenna near-field polanar scan- ning measurements are described. It

provides ways for estimating the magnitude of each individual source of error

and then combining them to estimate the

total uncertainty in the measurement.

Mathematical analysis, computer simulation, and measurement tests are all used

where appropriate.

[Contact: Allen C. Newell, (303)

497-3743]
CEEE Technical Progress Bulletin - June 1988 Page 1

Antenna Metrology (cont'd.)

Newell, A.C., Improved Polarization

Measurements Using a Modified ThreeAntenna Technique.

An improved three-antenna measurement of

polarization is described that greatly

reduces the uncertainty due to phase

measurement errors.

[Contact; Allen C. Newell, (303)

497-3743]

Newell, A.C., and Stubenrauch, C.E.,

Effect of Randcxn Errors in Planar

Near-Field Measurement.

Expressions are developed which relate

the signal-to-noise ratio in the

near field to the signal-to-noise ratio

in the far field for antenna near-field

planar scanning. The expressions are

then used to predict errors in far-field

patterns obtained from near-field data.

A technique is also given to measure the

noise in the far-field pattern.

[Contact: Allen C. Newell, (303)

497-3743]

Newell, A.C., Ward, R. , and McFarlane,

E . , Gain and Power Parameter Measurements Using Planar Near-Field Techniques . Equations are developed and measurement

techniques described for obtaining gain,

effective radiated power, and saturating

flux density using antenna near-field

planar scanning measurements. These are

compared with conventional far-field

techniques, and a number of parallels

are evident. These give insight to the

theory and help to identify the critical

measurement parameters. Application of

the techniques to the Intelsat VI satellite are described.

[Contact: Allen C. Newell, (303)

497-3743]

Recently Published

Francis, M.H., and Hill, D.A., Out-ofBand Response of Array Antennas,

Proceedings of the 9th Annual Meeting

and Symposium of the Antenna Measurement Technique Association (AMTA)

,

Seattle, Washington, September 28-October 2, 1987, pp. 1 4-19 (1 987).

At the National Bureau of Standards,

we have examined the out-of-band

response of array antennas from both a theoretical and experimental point of

view. Theory shows that the out-of-band

response of an antenna depends primarily

on two factors: the antenna's input

impedance and its directivity. Experiment shows that, for most practical

purposes, the out-of-band response of an

antenna can be estimated from a measurement of the antenna' s input reflection

coefficient alone. If the reflection

coefficient is low, the antenna response

will be good; if the reflection coefficient is high, the antenna response

will be poor.

[Contact: Michael H. Francis, (303)

497-5873]

Hill, D.A., and Francis, M.H., Out-ofBand Response of Antenna Arrays,

Proceedings of the 1987 IEEE International Symposium on Electromagnetic

Compatibility, Symposiim Record, August

25-27, 1987, Atlanta, Georgia, pp.

435-438. [An expanded version appeared

as NBSIR 86-2037 (June 1986).]

The response of antenna arrays to outof-band frequencies has been analyzed

using the effective aperture approach.

An average value of effective aperture

can be obtained by averaging the incidence angle and the polarization of the

incident field. Far-field patterns have

also been calculated by treating the

array element excitations as random

variables. The randomness in the element excitations causes a decrease in

directivity and an increase in sidelobe

level.

[Contact: David A. Hill, (303)

497-3472]

Koepke, G.H. , Hill, D.A., and Ma, M.T.,

Analysis of an Array of Log-Periodic

Dipole Antennas for Generating Test

Fields, NBSIR 87-3068 (June 1987).
Page 1

CEEE Technical Progress Bulletin - June 198R

Antenna Metrology (cont'd.)

[Contact: Michael H. Francis, (303)

497-5873]

Hill, D.A., and Francis, M.H. , Out-ofBand Response of Antenna Arrays,

Proceedings of the 1987 IEEE International Symposium on Electromagnetic

Compatibility, Symposiixn Record, August

25-27, 1987, Atlanta, Georgia, pp.

435-438. [An expanded version appeared

as NBSIR 86-2037 (June 1986).]

The response of antenna arrays to outof-band frequencies has been analyzed

using the effective aperture approach.

An average value of effective aperture

can be obtained by averaging the incidence angle and the polarization of the

incident field. Far-field patterns have

also been calculated by treating the

array element excitations as random

variables. The randomness in the element excitations causes a decrease in

directivity and an increase in sidelobe

level.

[Contact: David A. Hill, (303)

497-3472]

Koepke, G.H., Hill, D.A., and Ma, M.T.,

Analysis of an Array of Log-Periodic

Dipole Antennas for Generating Test

Fields, NBSIR 87-3068 (June 1987).

An analysis of log-periodic dipole

antennas was extended to study their use

in arrays designed for electromagnetic

susceptibility measurements. Parameters

of an array of five log-periodic dipole

antennas were calculated and in some

cases compared to a single log-periodic

dipole antenna. These parameters were

used to evaluate the tradeoffs that

exist in the design of an optimum

transmitting antenna for susceptibility

measurements

[Contact: Galen H. Koepke, (303)

497-5766]

Muth, L.A., Experimental Study of

Interpanel Interactions at 3.3 GHz,

Proceedings of the 9th Annual Meeting

and Symposium of the Antenna Measurement Technique Association (AMTA),

Seattle, Washington, September 28-October 2, 1987, pp. 25-29 (1987).

A general theoretical approach is formulated to describe the complex electromagnetic environment of an N-element

array. The theory reveals the elementto-element interactions and multiple

reflections within the array. To

experimentally verify some features of

the theory, measurements on experimental

array panels in various conf iourations

were made. These array panels consisted

of 256 microstrip radiating elements.

In each of the configurations, both the

near-field and portside signals were

measured to study the interactions

between these panels. In particular,

the effects of open-circuited array

panels on the radiation pattern of a single panel are observed both in the

near field and in the far field. It is

found that internal scattering is the

main mechanism of interaction between

panels, rather than reradiation of signals received from adjacent panels. The

effects of scattering are observable at

the -50 dB level.

[Contact: Lorant A. Muth, (303)

497-3603]

Laser Metrology

Released for Publication

Scott, T.R., NBS Standards for Optical

Power Meter Calibration, to be published in the DOD/ANSI/EIA Fiber Optic

Standardization Proceedings Book,

Arlington, Virginia, December 10-17,

1987.

The measurement of optical power in the

microwatt to milliwatt power range at

the National Bureau of Standards is

based upon a standard reference laser

calorimeter called the C-Series calorimeter. The C-Series calorimeter, which

is used as a national standard for the

measurement of laser power/energv , was designed to be rugged, easy to use, and

capable of measuring a wide range of

laser wavelengths. This standard calo-
CEEE Technical Progress Bulletin - June 1988 Page 1

Laser Metrology (cont'd.)

rime ter, in conjunction with various

laser sources and a calibrated beamsplitter measurement system, is used to

calibrate transfer standards which are,

in turn, used to calibrate other optical

power meters. This paper reviews the

operation and capabilities of this standard calorimeter and associated measurement system and summarizes the uncertainties associated with these energy

calibration measurements.

[Contact: Thomas R. Scott, (303)

497-3651]

Noise Metrology

Recently Published

Daywitt, W.C., Horn Design Equations

for the NBS Horn-Type Noise Standards, NBSIR 87-3073 (August 1987).

Equations are given for calculating the

interior dimensions of the horn pickup

in the NBS mi 1 lime ter-wave noise standards. These dimensions ensure negligible internal horn reflections, resulting

in an accurate calculation of the horn

attenuation. Measurements in the WR1 0

horn show a reflection of magnitude less

than 0.001.

[Contact: William C. Daywitt, (303)

497-3720]

Microwave and Millimeter -Wave Metrology

Recently Published

Clague, F.R., and Larsen, N.T., A

Transient: Response Error in Microwave

Power Meters Using Thermistor Detectors , 28th ARFTG (Automatic RF Techniques Group) Conference Digest, Saint

Petersburg Beach, Florida, December

4-5, 1986, pp. 79-89 (April 1987).

Broadband coaxial thermistor mounts are

commonly used in automated precision

microwave measurement systems such as six-port netwDrks. To reduce the effect

of temperature drift and to decrease the

total measurement time, it is desirable

to measure the dc bias voltage on the

thermistor mount very quickly after

turning the radio frequency on or off.

However, investigation has revealed that

a coaxial mount may take much longer to

settle to a stable dc bias voltage than

the thermistor element time constant or

the associated power meter servo bandwidth would indicate. If the bias voltage is measured before this transient

ends, the error in the calculated rf

power can be very large; as much as 1.4

percent has been observed. This paper

describes these transients and gives

measured durations and maximum error for

a number of different bolometer mounts.

[Contact: Fred B. Clague, (303)

497-5778]

Daywitt, W.C., A Simple Technique for

Determining Joint Losses on a Coeixial

Line frc»i Swept-Frequency Reflection

Data, IEEE Transactions on Instrumentation and Measurement, Vol. IM-36, No.

2, pp. 468-473 (June 1987). [Abbreviated version published in CPEM (Conference on Precision Electromagnetic Measurements) Digest, p. 40 (June 23-27,

1986, NBS Gaithersburg, R.F. Dziuba,

Ed. ) ] A need to separate connector loss from

swept-f requency automatic network ana- lyzer measurements to check an attenuation calculation for a low-loss, coaxial

line has led to a simple graphical technique for determining joint losses.

Measurements show that in addition to

the connector loss, it is also possible

to determine joint losses around center

conductor bead supports on the line

itself. Preliminary results indicate

that losses in the millidecibel range

can be determined to a precision of a few tenths of a millidecibel or better,

even though the data are obscured by

considerable connector loss and calibration error. Results were checked by

independent measurements and show excellent agreement.

[Contact: William C. Daywitt, (303)

497-3720]

Daywitt, W.C., A Simple Technique for
Page 20 CEEE Technical Progress Bulletin - June 1988

Microwave & Millimeter-Wave (cont'd.)

Investigating Defects in Coaxial Connectors, IEEE Transactions on Microwave Theory and Techniques, Vol. MTT35, No. 4, pp. 460-464 (April 1987).

This paper describes a technique that

uses swept-f requency automatic network

analyzer (ANA) data for investigating

electrical defects in coaxial connectors. The technique will be useful to

connector and ANA manufacturers and to

engineers interested in determining

connector characteristics for error

analyses. A simplified theory is presented and the technique illustrated by

applying it to perturbations caused by

the center conductor gap in a 7-mm connector pair.

[Contact: William C. Daywitt, (303)

497-3720]

Engen, G.F., On-Line Accuracy Assessment for the Dual Six-Port ANA: Background cuid Tlieory, IEEE Transactions

on Instrumentation and Measurement,

Vol. IM-36, No. 2, pp. 501-506 (June

1 987) . [Abbreviated version published

in CPEM (Conference on Precision Electrical Measurements) Digest, p. 236

(June 23-27, 1986, NBS Gaithersburg,

R.F. Dziuba, Ed.)]

One of the major challenges confronting

the microwave metrologist today is that

of providing an accuracy assessment for

the automatic network analyzer (ANA)

This paper provides the background and

theory for the recently developed on- line solution now in use with the sixport systems at the National Bureau of

Standards.

[Contact: Cletus A. Hoer, (303)

497-3705]

Hoer, C.A., On-Line Accuracy Assessment for the Dual Six-Port ANA: Treatment of Systematic Errors, IEEE

Transactions on Instrumentation and

Measurement, Vol. IM-36, No. 2, pp.

514-519 (June 1987)

Expressions are derived for calculating

estimates of the systematic errors in

dual six-port or four-port measurements

of reflection coefficient and scattering

parameters due to imperfections in the

transmission-line standard used to calibrate the system. A new mathematical

model for a four-port ref lactometer

makes it easier to visualize and analyze

these errors. In this new model, two of

the three parameters needed to characterize a four-port can be determined

without standards. All imperfections in

the standard perturb only the third

parameter which acts as an impedance

transformer.

[Contact: Cletus A. Hoer, (303)

497-3705]

Hoer, C.A., Some Questions and Answers

Concerning Air Lines as Impedance Standards, 29th ARFTG (Automatic RF Techniques Group) Conference Digest, Las

Vegas, Nevada, June 12-13, 1987, pp.

161-1 73 (1 987) . This paper attempts to answer a number

of questions that arise when using one

or more lengths of precision coaxial

transmission line to calibrate a dual

six-port automatic network analyzer,

questions such as: How important is the

quality of the test port relative to

that of the line? What type connectors

should the line standards have? What

are the advantages of using two lines

instead of one line and a through con- nection when test port imperfections are

considered? How many lines are optimum

from a quality control point of view?

What should the lengths be? The answers

to these questions appear to be: o Ihe quality of the line is much more

important than that of the test port.

A perfect line will calibrate out most

imperfections in the test port. An

example is given where 7 5-f2 test ports

are calibrated with 50-^2 lines, and

then used to measure reflection coefficient relative to 50 with very

little error.

o Greatest accuracy is achieved with

line standards having male connectors,

o Two lines get rid of many test port

imperfections that one line cannot.
CEEE Technical Progress Bulletin - June 1988 Page 21

Microwave & Millimeter -Wave (cont'd.)

Three lines will show up a problem if

one line is bad. Five lines will

identify which line is bad. Five is

probably optimum.

o There may not be an optimum for the

actual lengths of a set of lines, but

there does appear to be an optimum

difference in the lengths.

[Contact: Cletus A. Hoer, (303)

497-3705]

Hoer, C.A., and Engen, G.F., Calibrating a Dual Six-Port or Four-Port for

Measuring Two-Ports with Any Connectors, Proceedings of the lEEE-MTT

Symposium, Baltimore, Maryland, June

2-4, 1986, pp. 665-668 (1 986).

A technique is described for calibrating

a dual six-port or four-port ANA so that

the scattering parameters of two-port

devices having any combination of con- nectors can be measured. The technique

is a generalization of the "thrureflect-line" calibration technique in

which the "thru" is replaced with a second length of precision transmission

line.

[Contact: Cletus A. Hoer, (303)

497-3705]

Hoer, C.A., and Engen, G.F., On-Line

Accuracy Assessment for the Dual SixPort ANA: Extension to Nonmating Connectors, IEEE Transactions on Instrumentation and Measurement, Vol. IM-36,

No. 2, pp. 524-529 (June 1987). [Abbreviated version published in CPEM

(Conference on Precision Electrical

Measurements) Digest, pp. 241-242 (June

23-27, 1986, NBS Gaithersburg, R.F.

Dziuba, Ed. )

]

A technique is described for calibrating

a dual six-port or four-port automatic

network analyzer (ANA) so that the scattering parameters of two-port devices

having any combination of connectors can

be measured. The technique is a generalization of the "thru-reflectline" calibration technique in which the

"thru" is replaced with a second length

of precision transmission line. Expressions for errors associated with the

second line are derived.

[Contact: Cletus A. Hoer, (303)

497-3705]

Judish, R.M., and Engen, G.F., On-Line

Accuracy Assessment: for the Dual SixPort ANA: Statistical Methods for

Random Errors, IEEE Transactions on Instrumentation and Measurement, Vol.

IM-36, No. 2, pp. 507-513 (June 1987).

[Abbreviated version published in CPEM

(Conference on Precision Electrical

Measurements) Digest, p. 237 (June

23-27, 1986, NBS Gaithersbura, R.F.

Dz iuba, Ed . )

]

A basic property of a measurement process is that repeated observations of

the same quantity will not give identical results due to the presence of ran- dom errors. In order to assess the

effects of random errors in our measurement process, we need to build in redundancy. This paper presents a brief

summary of the statistical methods used

to evaluate the random errors in dual

six-port measurements of reflection

coefficient and scattering parameters.

[Contact: Robert M. Judish, (303)

497-3380]

Juroshek, J. R., On-Line Accuracy Assessment for the Dual Six-Port ANA:

Experimental Results, IEEE Transactions on Instrumentation and Measurement, Vol. IM-36, No. 2, pp. 520-523

(June 1987). [Abbreviated version

published in CPEM (Conference on Precision Electrical Measurements) Digest,

p. 240 (June 23-27, 1986, NBS Gaithersburg, R.F. Dziuba, Ed.)]

When a calibration laboratory such as the National Bureau of Standards (NBS)

performs a measurement for a customer,

the accuracy which the laboratory attaches to its measurements is a significant part of the customer' s report. In

some instances, the accuracy statement

may be more important to the customer

than the measurement itself. Modern

automated measurement systems can often
Page 22 CEEE Technical Progress Bulletin - June 1988

Microwave & Millimeter-Wave (cont'd.)

perform hundreds of measurements in a fraction of a second. However, few, if

any, of these systems attempt to assess

the accuracy of those measurements in a real-time or on-line basis.

The accuracy of a modern automatic network analyzer (ANA) is a function of a number of variables. Connector quality,

operator technique, system hardware, and

system calibration are just a few of the

many parameters that affect the day-today accuracy of an automated system.

This paper describes the results of the

current efforts at NBS to implement

on-line accuracy estimates for its dual

six-port network analyzers. Results are

presented showing uncertainty estimates

obtained in quasi-real time during the

measurement of customers' devices.

[Contact: John R. Juroshek, (303)

497-5362]

Juroshek, J.R., A Study Into Measurements of Connector Repeatability Using

Highly Reflecting Loads, IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-35, No. 4, pp. 457-460

(April 1 987)

This paper investigates the repeatability of measurements of the reflection

coefficient F of highly reflecting

devices with changes in the RF connector

joint. The changes in the connector

joint are due to disconnecting and

reconnecting the connector pair. It is

shown that many of the measurement discrepancies observed in practice can be

explained with a simple connector model.

The paper shows that the sensitivity of

measuring RF connector changes can be

increased by using highly reflecting

loads. The changes in F due to changes

in resistance or reactance can be four

times greater for highly reflecting

devices [|r|-lj than for nonreflecting

devices l^|r|-0j. Experiments on two

devices with 1 4-mm connectors are

described in order to compare them with

theory. The basic principles described

in this paper should be beneficial to

connector designers who need to observe

small changes in connector parameters

and to the work of calibration standards

designers, where small connector imperfections are a major part of their measurement uncertainty,

[Contact: John R, Juroshek, (303)

497-5362]

Saulsbery, L.F., and Adair, R.T., ANA

Measurement Results on the ARFTG

Traveling Experiment, 28th ARFTG

(Automatic RF Techniques Group) Conference Digest, Saint Petersburg Reach,

Florida, December 4-5, 1986, pp, 65-78

(April 1 987)

The Automatic RF Techniques Group

(ARFTG) Executive Committee has

assembled two traveling measurement

assessment kits. Each of these kits

consists of: 1 -dB , 20-dB, 40-dB, and

60-dB attenuators; a 50-Q termination; a

1 0-cm air line; 1,2-V standing-wave

ratio and 2,0-V standing-wave ratio

mismatched terminations; and a shortcircuit termination. These devices are

equipped with precision 7-mm coaxial

connectors. The traveling kits are

being circulated among measurement laboratories who wish to assess their ability to measure reflection coefficient,

attenuation, and phase shift from 300

MHz to 17 GHz. The results obtained on

ten different automated measurement

systems are presented,

[Contact: Cletus A. Hoer, (303)

497-3705]

Optical Fiber Metrology

Released for Publication

Danielson, B.L, , Calibration and Steindardization Issues for the Optical

Time-Domain Refleetometer.

We review some of the issues related to

the specification and assurance of optical time-domain ref lactometer (OTDR)

performance. These include selection of

appropriate performance parameters,

definition of terms, test procedures,

measurement difficulties, and use of
CEEE Technical Progress Bulletin - June 1988 Page 23

Optical Fiber Metrology (cont'd.)

standard reference fibers. Some recommendations are given for an OTDR calibration program.

[Contact: Bruce L. Danielson, (303)

497-5620]

Scott, T.R., NBS Standards for Optical

Power Meter Calibration, to be published in the DOD/ANSI/EIA Fiber Optic

Standardization Proceedings Book,

Arlington, Virginia, December 10-17,

1 987.

The measurement of optical power in the

microwatt to milliwatt power range at

the National Bureau of Standards is

based upon a standard reference laser

calorimeter called the C-Series calorimeter. The C-Series calorimeter, which

is used as a national standard for the

measurement of laser power/energy, was designed to be rugged, easy to use, and

capable of measuring a wide range of

laser wavelengths. This standard calorimeter, in conjunction with various

laser sources and a calibrated beamsplitter measurement system, is used to

calibrate transfer standards which are,

in turn, used to calibrate other optical

power meters. This paper reviews the

operation and capabilities of this standard calorimeter and associated measurement system and summarizes the uncertainties associated with these energy

calibration measurements.

[Contact: Thomas R. Scott, (303)

497-3651]

Electro-Optic Metrology

Released for Publication

Danielson, B.L. , and Whittenberg, C.,

Interferometric Dispersion Measurements

on Small Guided-Wave Structures.

We describe a method for obtaining dispersion properties of components in

micro-optic systems. The technique is

based on a Fourier analysis of the re- flective signatures obtained from a coherence-domain reflactometer.

[Contact: Bruce L. Danielson, (303)

497-5620]

Phelan, Jr., R.J. , and Craig, R.M., An

Electrically Calibrated Silicon Bolometer for Low Level Optical Power and

Energy Measurements, to be published

in the Proceedings of SPIE - The International Society for Optical Engineering, P.O. Box 20, Bellingham, WA 98227

[conference, Los Angeles, California,

January 11-15, 1988].

A cryogenically cooled, silicon-onsapphire, electrically calibrated bolometer has been designed and measured to

have a noise equivalent power of 10“^^

watts per root Hertz. Optical power

measurement accuracies of 1 percent have

been demonstrated.

[Contact: Robert J. Phelan, Jr., (303)

497-3696]

Simpson, P.A., Fast-Pulse Generators

and Detectors for Characterizing Laser

Receivers at 1,06 ym, to be published

in the Proceedings of SPIE - The International Society for Optical Engineering, P.O. Box 20, Bellingham, WA 98227

[conference, Los Angeles, California,

January 11-15, 1988].

A detector system is described which is

capable of measuring the waveform of

pulses used to calibrate laser receivers

at 1.06 ym. The risetime of the system

is 0.8 ns. All parts of the system are

available commercially. Also described

is an optical impulse generator at 1.06

ym with a risetime of less than 100 ps.

This impulse generator can be used to

measure the impulse response of the

detector system and of the laser

receiver.

[Contact: Philip A. Simpson, (303)

497-3789]

Recently Published

Polak-Dingels , P. , Burdge, G. , Lee, Chi

H., Seabaugh, A.C., Brundage, R.T.,

Bell, M.I., and Albers, J, , An Investigation of Photoconductive Picosecond

Microstripline Switches on SelfImplanted Silicon on Sapphire (SOS),
Page 24 CEEE Technical Progress Bulletin - June 198R

Electro-Optic Metrology (cont'd.)

Picosecond Electronics and Optoelectronics II, F.J. Leonberger, C.H. Lee,

F. Capasso, and H. Morkoc, Eds.

( Springer-Verlag, 1987), pp. 232-236.

[Conference Proceedings of the 2d Topical Meeting on Picosecond Electronics

and Optoelectronics, Incline Village,

Nevada, January 1 4-1 6, 1987]

Silicon-on-sapphire (SOS) switches,

damaged by implantation with 270-keV Si

ions at fluence levels of 10^2 to 2 x 10^5 cm“2, have been characterized by

picosecond cross-correlation, Raman, and

resistivity measurements. Response

times as short as 9 ps were measured for

an implant dose of 10^^. Raman measurements indicate amorphous silicon is not

formed until the dose reaches 2 x 10^^

cm“2^ but there is no further decrease

in response time at the higher doses.

The resistivity peaks at the same dose

level at which the minimum response time

is observed, and then decreases for

higher dose. The mobility decreases

monotonically with increasing implant

dose. We find the optimum implantation

condition is one that produces heavy

damage in the material without fully

amorphizing the silicon. Amorphization

decreases the on/off ratio of the device

through reduction of both dark resistance and mobility, without increasing

the speed of the device.

[Contact: Michael I. Bell, (301)

975-2044]

Other Fast Signal Topics

Released for Publication

Dulcie, L.L., and Capobianco, T.E.,

New Standard Test Method for Eddy

Current Probes, to be published in

the Proceedings of the 36th Defense

Conference on Nondestructive Testing,

St. Louis, Missouri, October 26-29,

1 987.

Recently, a draft military standard for

the characterization of eddy current

probes was submitted to the U.S. Army

Materials Technology Laboratory by the

National Bureau of Standards. We discuss the development of a standard test

set and our future plans for a roundrobin study for evaluating the draft

standard in a controlled study. The

test set will be used to determine

impedance measurement capability and

consists of two parts: (1 ) a prototype

test block set as specified by the draft

standard and (2) a specially designed

and characterized probe set. A

round-robin survey will be conducted to

determine ease of use, repeatability of

characterization measurements, and

impedance measurement precision when

using the test blocks as specified in

the standard.

Round-robin participants will he military nondestructive evaluation facilities that will perform impedance measurements using the standard test set.

The ability to measure impedance reliably is basic to the implementation of

the standard. This reliabilitv will be

determined by a statistical analysis of

measurement results received from the

round-robin participants.

[Contact: Laura L. Dulcie, (303)

497-51 81

]

Recently Published

Hill, D.A., and Cavcey, K.H., Coupling

Between Two Antennas Separated by a Planar Interface, IEEE Transactions

on Geoscience and Remote Sensing, Vol.

GE-25, No. 4, pp. 422-431 (July 1987).

The plane-wave spectrum technigue is

used to analyze the coupling between a pair of antennas separated by a planar

interface. Multiple reflections between

the antennas or between either antenna

and the interface are included in the

formulation. The formulation is used

for model detection of buried objects,

and a low-f reguency metal detector example is analyzed in detail. For a transmitting loop and a buried oblate spheroid, the plane-wave spectrum technigue

is shown to agree with well-known guasistatic approximations. Some experimen-
CEEE Technical Progress Bulletin - June 1988 Page 25

Other Fast Signal Topics (cont'd.)

tal results from a 3-kHz metal detector

are also shown.

[Contact: David A. Hill, (303)

497-3472]

ELECTRICAL SYSTEMS

Power Systems Metrology

Released for Publication

Martzloff, F.D., Power Quality Measurements: Bringing Order Out of

Chaos, to be published in the Proceedings of the Energy Technology Conference, Washington, D.C., February

1 7-1 9, 1 988.

The quality of the power supplied to

sensitive electronic equipment is an important issue. Quantifying this quality, however, is difficult under the

present state of nonexistent or uncoordinated standards concerning two

related questions: (1 ) what levels of

power quality are required for what

types of loads, and (2) what measurement

techniques are required to determine

reliably the level of disturbances that

reduce quality. Development of standards by the consensus process and

voluntary compliance, although a slow

process, is a mechanism for reaching

technically sound and cost-effective

solutions. Several standards projects

are in progress, but need industry-wide

support to become the generally accepted

basis for valid and useful measurements

of power quality.

[Contact: Francois D. Martzloff, (301)

975-2409]

Recently Published

Kelley, E.F., and Hebner, R.E., Electro-Optic Field Measurement at a Needle

Tip and Streamer Initiation in Nitrobenzene, 1986 Annual Report of the

Conference on Electrical Insulation and

Dielectric Phenomena, Claymont, Delaware, November 2-6, 1986, pp. 272-277

( October 1 987)

Kerr-effect electro-optic observations

of the impulse field are made in the

vicinity of the tip of a needle-sphere

electrode geometry. Distortions from

the Laplacian field indicate charge

injection from the tip along a narrow

channel prior to streamer initiation.

Charge densities estimated to be on the

order of 100 yC/cm^ exist in the channel. An order of magnitude calculation

suggests that sufficient energy is deposited in the channel to cause vaporization of the liquid due to joule heating. The streamer will initiate where

the charge injection channel touches the

electrode.

[Contact: Edward F. Kelley, (301)

975-2424]

Kelley, E.F., Nehmadi, M., Hebner, R.E.,

McKenny, P.J., and Forster, F.O.,

Simultaneous Measurement of Light

Qnission, Current Pulses and Growth of

Prebreakdown Streamers in Hexane,

Proceedings of the 1987 Conference on

Electrical Insulation and Dielectric

Phenomena, Gaithersburg, Maryland,

October 1 9-22, 1987, pp. 1 32-1 37 (October 1 987) . High-speed, image-converter photography

is used to document the growth characteristics of prebreakdown phenomena

emanating from a cathode needle in a needle-sphere electrode system placed in

a liquid. The cathode streamer growth

characteristics are compared to the

pulsed nature of the current feeding the

streamer and light emission from the

streamer. The fact that there is a strong temporal correlation between the

current and light pulses is confirmed.

However, it is found that no strong

correlation exists between this pulselike behavior and the growth of the

prebreakdown event, and that the streamer grows rather uniformly despite the

discrete nature of the current supplied.

This information should contribute to

the development of theoretical modeling

efforts on the generation and development of prebreakdown phenomena in

liquids

[Contact: Edward F. Kelley, (301)

975-2424]
Page 26 CEEE Technical Progress Bulletin - June 1 988

Power Systems (cont'd.)

Me Knight, R.H. , Measurement, of Electric Field and Ion-Related Quantities,

Air Ions: Physical and Biological

Aspects, Chapter 3, J. M. Charry and

R.I. Kavet, Eds., pp. 23-55 (CRC Press,

Inc., Boca Raton, Florida, 1987).

Measurements of various quantities to

describe the electrical characteristics

of the atmosphere have been made for

many decades by atmospheric scientists

using a variety of instruments and measurement techniques. The purpose of

this chapter is to describe those techniques which have application in

present-day ion-related research.

Topics covered include definitions of

terms; measurements of electric field,

space potential, vertical current density, conductivity, net space-charge

density, unipolar ion density, and ion

mobility; species identification; errors

associated with external electric fields

and off-ground operation of instruments;

and applications of measurements (23

figures, 101 literature references).

[Contact: Ronald H. McKnight, (301)

975-2431]

McKnight, R.H., Operation of an Ion

Counter in the Ground Plane Under a Monopolar High-Voltage Line, Proceedings of the Twenty-Third Hanford Life

Sciences Symposium, Interaction of

Biological Systems with Static and ELF

Electric and Magnetic Fields, Richland,

Washington, October 2-4, 1984, pp. 1-7

(1 987)

Studies have been made of the operation

of an ion counter with the inlet located

in the ground plane near a monopolar

high-voltage line. Electric-field

values at the ground plane ranged

between 14.8 kV/m and 29.8 kV/m, while

ion current densities varied from 0.1 to

0.43 yA/m^, An observed variation in

measured ion density with volumetric

flow rate through the counter appears to

be primarily due to losses in the duct

between the ground-plane opening and the

ion-counter inlet.

[Contact: Ronald H. McKnight, (301)

975-2431

]

Van Brunt, R.J. , Herron, J.T., and Fenimore, C., Corona-Induced Decomposition of Dielectric Gases, Gaseous

Dielectrics V, Proceedings of the Fifth

International Symposiim on Gaseous

Dielectrics, Knoxville, Tennessee, May

3-7, 1987 (Pergamon Press, New York,

1 987) , pp. 1 63-1 73.

A three-zone model for chemical decomposition of electronegative gases in negative point-plane corona discharges is

proposed which considers the discharcre

glow, ion-drift, and main gas volumes

respectively as separate regions of

diminishing chemical activity and

increasing relative size. The proposed

model is shown to be useful in predicting discharge by-product yields and the

dependences of these yields on discharge

current and gas mixture composition. As

an example, the model is applied here to

the decomposition of pressurized SF^

containing trace levels of water vapor

and is shown to yield results for oxyfluoride production that are in satisfactory agreement with observations.

[Contact: Richard J. Van Brunt, (301)

975-2425]

Superconductors

Released for Publication

Ekin, J.W., Larson, T.M., Bergren, N.F.,

Nelson, A.J., Swar tzlander , A.B.,

Kazmerski, L.L. , Panson, A.J. , and

Blankenship, B.A., High-T^ Superconductor/Noble-Metal Contacts with

Surface Resistivities in the

Q-cm2 Range

Contact surface resistivities (product

of contact resistance and area) in the

1 0 ^2-cm^ range have been obtained for

both silver and gold contacts to highT(^ superconductors. This is a reduction by about eight orders of macnitude

from the contact resistivity of indiumsolder connections, low enough to be

considered for interconnect applica-
CEEE Technical Progress Bulletin - June 1988 Page 27

Superconductors

tions. The contacts were formed by

sputter depositing either silver or gold

at low temperatures (<100°C) on a clean

surface of Y^Ba^Cu^Oy-g (YBCO) and

later annealing the contacts in oxygen.

Annealing temperature characteristics

show that for bulk-sintered YBCO sam- ples, there is a sharp decrease in con- tact resistivity after annealing

silver/YBCO contacts in oxygen for 1 h

at temperatures above ~500°C and

gold/YBCO contacts for 1 h above ~600°C.

Oxygen annealing for longer times (8 h)

did not reduce the contact resistivity

of silver contacts as much as annealing

for 1 h. Auger microprobe analysis

shows that indium /YBCO contacts contain

a significant concentration of oxygen in

the indium layer adjacent to the YBCO

interface. Silver and gold contacts, on

the other hand, contain almost no oxygen

and have favorable interfacial chemistry

with low oiQ^gen affinity. Silver also

acts as a "switchable" passivation

buffer, alleging oxygen to penetrate to

the YBCO interface at elevated temperatures, but protecting the YBCO surface

at room temperature.

[Contact: John W. Ekin, (303) 497-5448]

Ekin, J.W., Panson, A.J. , and Blankenship, B.A., Effect of Oxygen Annealing on Low-Resistivity Contacts for

High-T^^ Superconductors, to be

published in the Proceedings of the

Materials Research Society Meeting,

Boston, Massachusetts, November 30-

December 4, 1987, M.B. Brodsky, H.L.

Tuller, R.C. Dynes, and K, Kitazawa,

Eds., Vol. 99 (Materials Research Society, Pittsburgh, Pennsylvania) .

A method for making low-resistivity

contacts to high-T^ superconductors

has been developed, consisting of depositing noble metal contact pads (silver

or gold) on a clean superconductor sur- face at low temperatures (<150°C).

After annealing the silver contact pads

in oxygen at intermediate temperatures

(<500°C) for 1 h, contact resistivities

less than 2 x 1 0“^ S^-cm^ at 76 K are

obtained, about six orders of magnitude

less than for indium-solder contacts.

Before annealing, the contact resistivities are still very low, in the 10“^ to

10“^ f^-cm2 range at 76 K, which would be

useful when contacts with low fabrication temperatures are required. The

voltage-current characteristics of the

contacts are strongly nonlinear after

annealing, having a superconducting

transition character. This is ascribed

to the critical current of the superconducting material being exceeded at the

contact interface. External connections

to the contact pads have been made usina

both solder and thermosonic wire-bonding

techniques

[Contact: John W, Ekin, (303) 497-5448]

Ekin, J.W., Panson, A.J. , and Blankenship, B.A., Method for Making LowResistivity Contacts to High-Tc

Ceramic Superconductors at Ambient

Temperatures

A general method for making low-resistivity contacts to high-T^ superconductors at ambient temperatures has been

developed, which has achieved contact

surface resistivities of less than 10

y^^-cm2 at 77 K. The contacts showed

consistently low resistivity and little

degradation when exposed to dry air over

a four-month period and when repeatedly

cycling between room temperature and 77

K. The contact method consists of three

parts: minimizing exposure of the

superconductor surface to air before the

contacts are made; etching the superconductor surface using a sputter technique; and sputter depositing a thin

layer of a conductive material with a low oxygen affinity — silver was used

-- to protect the surface and to serve

as a contact pad. External connections

to the contact pads have been made using

both solder and ribbon-bonding techniques . [Contact: John W, Ekin, (303) 497-5448]

Peterson, R.L., and Ekin, J.w,,
Page 28 CEEE Technical Progress Bulletin - June 1988

Superconduc tors (cont'd.)

Josef^son JunctdLon Model of Critical

Current in Granular Yj^Ba 2Cu 207_g,

We calculate the transport critical

current density in a granular superconductor in magnetic fields below about 5

X 10“3 T, The field dependence in this

region is assumed to be controlled by

intragranular or intergranular Josephson

junctions. Various model calculations

are fit to transport critical current

data on bulk Yj^Ba

2 CU ceramic

superconductors, whose average grain

size is nominally 10 pm. The results

yield an average junction cross-sectional area (thickness x length) of 4 to 6

pm^. If the junctions are at the grain

boundaries, a London penetration depth

of about 200 to 300 nm is inferred,

consistent with other estimates. We

conclude that Josephson junctions at

twinning boundaries, if such junctions

exist, do not limit the transport critical current in these highly twinned

s amples

[Contact: Robert L. Peterson, (303)

497-3750]

Recently Published

Ekin, J.W., Irregularity in Nb-Ti

Filament Area and Electric Field Versus

Current Characteristics, Cryogenics,

Vol. 27, pp. 603-607 (November 1987),

There is a correlation between irregularity in filament area ( "sausaging"

)

and the shape of a superconductor's

electric field (E) versus current (I)

relationship. The shape of the E-I

characteristic is quantified in terms of

the resistive transition parameter, n, defined by E^in, lqw values of n less

than about 20 correlate with a wide

filament diameter distribution, while n values over 50 correspond to a distribution more than 2.5 times smaller. It is

proposed that the low-field (constant)

value of n be used as an index of filament quality in evaluating different

superconductors for practical applications. A model is also suggested to

explain this effect in terms of a locally depressed filament critical current,

which forces current to transfer across

the normal matrix material into neighboring filaments. The relationship

between n and the statistical distribution of filament diameters may be useful

in that it permits an easy method of

estimating the extent of sausaging in

practical multifilamentary Nb-Ti superconductors from measurements of n. [Contact: John W. Ekin, (303) 497-5448]

Fkin, J.W., Trcinsport: Critical Currents in Bulk Sintered Y^^Ba Cu^O^ and

Possibilities for Its Ennancement

,

Advanced Ceramic Materials, Vol, 2,

Special Issue 3B , pp. 586-591 (1987),

Several general processing methods for

increasing the critical current density,

Jq

,

in bulk sintered Y^Ra^Cu^Ox

superconductor are outlined. Data

indicate that the transport J^^ in bulk

polycrystalline specimens is dominated

by a weak-link region between high-J^

grains and that potentially much higher

Jq may be possible. Two possible

causes of such a weak-link phenomenon

are considered: low T^ phases or

impurities localized in the grain

boundary region, and anisotropy of the

superconducting properties. Several

methods for minimizing the weak-link

effects to increase the J^^ are discussed.

[Contact: John W. Ekin, (303) 497-5448]

Ekin, J.W., Braginski, A. I., Panson,

A.J., Janocko, M.A., Capone, D.W.,

Zaluzec, N.J., FI andermeyer , B,,

deLima, O.F., Hong, M,, Kwo, J. , and

Liou, S.H., Evidence for Weak Link

and Anisotropy Limitations on the

Transport Critical Current in Bulk

Polycrystalline Y^Ba Cu^O^, Journal

of Applied Physics, \fel. 62, No. 12,

pp. 4821-4828 (15 December 1987).

Measurements of the transport criticalcurrent (dc)/ magnetization Jq, and

magnetoresistance in a number of bulk
CEEE Technical Progress Bulletin - June 1988 Paae 29

Superconduc tors (cont'd.)

sintered samples of Y Ba^Cu^Ox from

several different laboratories indicate

that the transport is limited by

weak-link regions between high

regions. The weak-link has a Josephson character, decreasing by two

orders of magnitude as the magnetic

field is increased from 0.1 to 1 0 mT at

7 7 K. An examination of the grainboundary region in Y^Ba^Cu^Oj^ shows no observable impurities or second phases

to the scale of the [001] lattice planes

(~12 A). The effect of intrinsic con- duction anisotropy is discussed. A

current-transfer model is proposed in

which weak conduction along the c-axis

plays a role in limiting at grain

boundaries. Orienting the grains in the

powder state during processing may

result in enhanced transport in

bulk conductors.

[Contact: John W. Ekin, (303) 497-5448]

Ekin, J. W., Panson, A.J. , Braginski,

A. I., Janocko, M.A., Hong, M., Kwo, J.

,

Liou, S.H. , Capone, D.W., and Flandermeyer, B., Transport Critical-Current

Characteristics of Y^^Ba Cu^O^/

Proceedings of Symposium S 1987 Spring

Meeting of the Materials Research Society, Anaheim, California, April 23-24,

1 987, D.U. Gubser and M. Schluter,

Eds., pp. 223-226 (1987).

Voltage vs. current (V-I ) characteristics were measured at magnetic fields up

to 24 T at a temperature of 77 K in sev- eral Y^Ba^Cu^Oj^ samples fabricated at

different laboratories. Critical temperatures, Tq, measured by resistivity

were about 93 K. All samples showed

linear V-I characteristics at current

levels much greater than the critical

current, However, the slope was significantly less than the normal

resistance at T^. The slope increased

with magnetic field and reached the

normal resistance value only at fields

greater than 24 T. Values of the transport critical-current density near

zero magnetic field were generally low

and variable (about 1 to 200 A/cm^),

The transport fell sharply when

magnetic field was applied, decreasing

by about an order of magnitude between

1 0"2 T and 1 T. This leads to an effective upper critical field for transport

critical currents, in Y Ea2Cu20x that

is significantly less than the upper

critical field defined by the field at

which the resistance increases to the

normal- state value. The transport

appears to be significantly less than

Jq calculated from magnetization data

on similar samples. These results are

consistent with the transport criticalcurrent in the Y^Ba^Cu 0^ system being

dominated by a "weax-link" region

between high-J^ grains.

[Contact: John W. Ekin, (303) 497-5448]

Goodrich, L.F., Pittman, E.S., and Ekin,

J.W., Studies of NbTi Strands Extracted from Coreless Rutherford

Cables, IEEE Transactions on Ma emetics, Vol. MAG-23, No. 2, pp. 1642-1 645

( March 1987).

The electromechanical properties of NbTi

strands extracted from coreless Rutherford cables were studied to clarify the

relative effects of strand location and

field angle on current degradation that

occurs in cables that have been com- pacted into a keystone shape. Detailed

critical-current measurements were made

on two samples which were fabricated

under controlled conditions. These are

prototype cables for high-energy physics

applications. Specific factors that are

addressed are the nature, location, and

amount of degradation. This information

is intended to lead to methods for re- ducing the amount of critical-current

degradation in cable manufacture.

[Contact: Loren F. Goodrich, (303)

497-3143]

Magnetic Materials and Measurements

Released for Publication

Fickett, F.R., Transverse Magnetoresistance of Oxygen-Free Copper, to be

published in the Proceedings of the
Page 30 CEEE Technical Progress Bulletin - June 1 98

Magnetic Materials (cont'd.)

1 0th International Conference on Magnet

Technology, Boston, Massachusetts,

September 17-25, 1987.

Recent studies on the magnetoresistance

of copper with residual resistance

ratios (RRR) in the range 100 to 1000

using cold work and irradiation as parameters modifying RRR show a large

spread in the appropriate region of the

Kohler plot. This spread is much larger

than that found in our earlier work on

very pure copper in which we used temperature as the main variable. We

report results of 4-K magnetoresistance

measurements on a large number of sam- ples of copper from various sources and

in various states of cold work, strain,

and reanneal. A new look is taken at

the Kohler plot as a method for predicting magnetoresistive behavior.

[Contact: Frederick R. Fickett, (303)

497-3785]

ELECTROMAGNETIC INTERFERENCE

Radiated Electromagnetic Interference

Released for Publication

Adams, J.W., Ondrejka, A.R., and Medley,

H.W., A Time-Domain System for Identification of the Natnral Resonant

Frequencies of Aircraft Relevant to

Electramagnetic Compatibility Testing, to be published as NBSIR

87-3077.

A method of measuring the natural resonant frequencies of a structure is

described. The measurement involves

radiating an aircraft with an impulsive

electromagnetic field and receiving the

echo reflected from this aircraft.

Resonances are identified by using a mathematical algorithm based on Prony's

method to operate on the digitized

reflected signal. The measurement

system consists of special transverse

electromagnetic horns, pulse generators,

a time-domain system, and an implementation of Prony's algorithm. The frequency range covered is 5 to 250 MHz; this

range is determined by antenna and circuit characteristics.

The use of this system is shown, and

measured data from several different

helicopters are presented in different

forms. These different forms are needed

to determine which of the resonant frequencies are real and which are false.

The false frequencies are byproducts of

Prony's algorithm.

[Contact: John W. Adams, (3 03)

497-3328]

Vanzura, E. , and Adams, J.W. , Generating Constant Electromagnetic Fields

Inside a Partially-Loaded Shielded

Room.

This paper describes a computer-controlled feedback system that can maintain field strength levels within

moderate bounds inside a partiallyloaded shielded room. These levels are

relatively uniform over a large enough

volume to allow radiated immunity testing of moderate-sized objects. The

frequency range depends on the characteristics of the transmit antenna; we use 50 to 200 MHz, which is usuallv a difficult range to cover because of

limitations of other electromagnetic

comp atibility/susceptibility test

facilities.

The measurement system consists of a computer, signal generator, amplifier,

biconical antenna, and an isotropic

probe system.

[Contact: Eric Vanzura, (303)

497-5752]

Recently Published

Crawford, M.L. , A TQf Driven Reverberating Chamber: A Single Facility for

Radiated EMS/V Testing, 10 kHz - 18

GHz?, Proceedings of the 1987 International Conference on Electromagnetic

Compatibility (EMC EXPO), San Diego,

California, May 19-21, 1987, pp.

T1 1 . 1 8-T1 1 . 28.
CEEE Technical Progress Bulletin - June 1988 Page 31

Radiated EMI (cont'd.)

This paper discusses the design, operation, and evaluation of a reverberating

chamber, excited by a transverse electromagnetic (TEM) transmission line, for

use in establishing radiated electromagnetic fields for susceptibility/ vulnerability (EMS/V) testing of electronic

equipnent. The potential range of application is from 10 kHz to 18 GHz.

Included are brief descriptions of the

facility, the operation procedures, the

method for determining the test field

amplitude inside the chamber, and the

evaluation of the chamber' s electrical

parameters such as VSWR and E-field

strength as a function of input power.

Also presented are the E-field spatial

uniformity and a summary of measurement

uncertainties and conclusions derived

from the test results.

[Contact: Myron L. Crawford, (3 03)

497-5497]

Crawford, M.L., and Bean, J.L., NSWC

Reverberating Chamber-A High Power

Microwave Exposure Chamber,

Proceedings of the Third National High

Power Microwave Technical Conference,

Kirtland Air Force Base, New Mexico,

December 1-5, 1986, unpaged (1 987).

[An expanded version appeared under the

title "Electromagnetic Radiation Test

Facilities Evaluation of Reverberation

Chambers Located at NSWC, Dahlgren,

Virginia," NBSIR 86-3051 (June 1986).]

This paper describes measurement procedures and results obtained from evaluating the reverberating chamber facility

located at the Naval Surface Weapons

Center (NSWC), Dahlgren, Virginia. The

facility was developed by the NSWC for

use in measuring and analyzing the electromagnetic susceptibility/ vulnerability

(EMS/V) of weapon systems and the

shielding effectiveness of enclosures

and shielding materials. A brief description of the facility is given including the instrumentation used for

performing the evaluation and calibration of the facility and for its use in

performing EMS/V tests. Measurements

described include the chamber's: (1)

insertion loss of coupling efficiency,

(2) tuner( s ) effectiveness, and (3) test

zone E-field uniformity and absolute

amplitude calibration. Advantages and

limitation for use of the reverberating

chamber method are summarized along with

comments on interpreting measurement

results and on conclusions derived from

these studies.

[Contact: Myron L. Crawford, (303)

497-5497]

Crawford, M.L., and Koepke, G.H., Performing EM Susceptibility/Vulnerability

Measurements Using a Reverberation

Chamber, Proceedings of the 7th

International Symposiim and Technical

Exhibition on EMC, Zurich, Switzerland,

March 3-5, 1 987, pp. 1 21-1 26 (1 987).

This paper discusses the design, evaluation, and use of a reverberation chamber

for performing electromagnetic susceptibility (EMS) measurements of electronic

equipment. Included are brief descriptions of the test procedures, application advantages and limitations, some

EMS test results, interpretation of test

results relative to free-space test

methods, and an estimate of measurement

uncertainties

[Contact: Myron L. Crawford, (303)

497-5497]

Francis, M.H. , and Hill, D.A., Out-ofBand Response of Array Antennas,

Proceedings of the 9th Annual Meeting

and Symposium of the Antenna Measurement Technique Association (AMTA),

Seattle, Washington, September 28-October 2, 1987, pp. 1 4-19 (1 987).

At the National Bureau of Standards,

we have examined the out-of-band

response of array antennas from both a theoretical and experimental point of

view. Theory shows that the out-of-band

response of an antenna depends primarily

on two factors: the antenna's input

impedance and its directivity. Experiment shows that, for most practical

purposes, the out-of-band response of an

antenna can be estimated from a measure-
Page 32 CEEE Technical Progress Bulletin - June 1 988

Radiated EMI (cont'd.)

ment of the antenna's input reflection

coefficient alone. If the reflection

coefficient is low, the antenna response

will be good; if the reflection coefficient is high, the antenna response

will be poor.

[Contact: Michael H. Francis, (303)

497-5873]

Hill, D.A., and Cavcey, K.H., Coupling

Between Two Antennas Sepcirated by a

Planar Interface, IEEE Transactions

on Geoscience and Remote Sensing, Vol.

GE-25, No. 4, pp. 422-431 (July 1987).

The plane-wave spectrum technique is

used to analyze the coupling between a pair of antennas separated by a planar

interface. Multiple reflections between

the antennas or between either antenna

and the interface are included in the

formulation. The formulation is used

for model detection of buried objects,

and a low-frequency metal detector

example is analyzed in detail. For a transmitting loop and a buried oblate

spheroid, the plane-wave spectrum

technique is shown to agree with

well-known quasi-static approximations.

Some experimental results from a 3-kHz

metal detector are also shown.

[Contact: David A. Hill, (303)

497-3472]

Hill, D.A., and Francis, M.H., Out-ofBand Response of Antenna Arrays

,

Proceedings of the 1987 IEEE International Symposium on Electromagnetic

Compatibility, Symposium Record, August

25-27, 1987, Atlanta, Georgia, pp.

435-438 (1987). [An expanded version

appeared as NBSIR 86-2037 (June

1 986) . ] The response of antenna arrays to outof-band frequencies has been analyzed

using the effective aperture approach.

An average value of effective aperture

can be obtained by averaging the incidence angle and the polarization of the

incident field. Far-field patterns have

also been calculated by treating the

array element excitations as random

variables. The randomness in the element excitations causes a decrease in

directivity and an increase in sidelobe

level.

[Contact: David A. Hill, (303)

497-3472]

Jesch, R.L., Measurement: of Shielding

Effectiveness of Different Cable and

Shielding Configurations by ModeStirred Techniques, NBSIR 87-3076

(Oc tober 1 987)

The shielding effectiveness of cable

configurations having different shielding arrangements and of shielding con- figurations used to terminate cable

shields for helicopter wiring was measured by mode-stirred techniques. The

mode-stirred measurements were taken at

discrete frequencies between 200 MHz and

6 GHz . In addition, shielding effectiveness data on the shielding configurations were also obtained in a transverse electromagene tic cell down to 1 MHz . A description of the cable and

shielding configurations is given along

with plots of the measured shielding

effectiveness data as a function of

f requency

[Contact: Ramon L. Jesch, (303)

497-3496]

Kanda, M., and Orr, R.D., Near-Field

Gain of a Horn and an Open-Ended Waveguide; Comparison Between Theory and

Experiment, IEEE Transactions on

7\ntennas and Propagation, Vol. AP-35,

No. 1, pp. 33-40 (January 1987). [Also

appeared in Symposium Digest, proceedings of the AP-S International Symposium 1 986, Vol. I, pp. 91-94 (June 8-13,

1986) and in the Proceedings of the

Fifth International Conference on Electromagnetic Compatibility, University

of York, United Kingdom, September

29-October 2, 1986, pp. 137-145.]

Generating a standard electromagnetic

field requires knowledge of the gain of

the transmitting antenna. The theory

and supporting experimental measurements

for the near-field gain of a pyramidal
CEEE Technical Progress Bulletin - June 1988 Page 33

Radiated EMI (cont'd.)

horn and an open-ended waveguide (OEG)

at 450 MHz are given. The empirical

near-field gain for the OEG is derived

from experimental results obtained by a twD-antenna method at about 2 GHz . The

theoretical near-field gain for the rec- tangular pyramidal horn is derived from

SchelJcunof f ' s formula. Two independent

near-field gain measurements of these

antennas are made using a three-antenna

method and a transfer-standard-probe

method. The discrepancy between theoretical and experimental results is

typically less than ±1 dB

[Contact: I4otohisa Kanda, (303)

497-5320]

Koepke, G.H., Hill, D.A., and Ma, M.T.,

Analysis of an Array of Log-Periodic

Dipole Antennas for Generating Test

Fields, NBSIR 87-3068 (June 1987).

An analysis of log-periodic dipole

antennas was extended to study their use

in arrays designed for electromagnetic

susceptibility measurements. Parameters

of an array of five log-periodic dipole

antennas were calculated and in some

cases compared to a single log-periodic

dipole antenna. These parameters were

used to evaluate the tradeoffs that

exist in the design of an optimum

transmitting antenna for susceptibility

measurements

[Contact: Galen H. Koepke, (303)

497-5766]

Ma, M.T., and Bensema, W.D., Aufomafed

TEM Cell for Measuring Unintentional EM

Emissions, Proceedings of the 1987

International Conference on Electromagnetic Compatibility (EMC EXPO) , San

Diego, California, May 19-21, 1987, pp.

T1 1 .

1 -T1 1 . 1 2 (1 987)

This paper summarizes the basic electrical properties of a transverse electromagnetic (TEM) cell, and the underlying

theoretical background, based on which a TEM cell is used to measure accurately

the emission of an unknown, unintentional leakage source. The theory and measurements have been verified by the

results of a simulated example and two

experiments using a spherical dipole

radiator and a small loop antenna.

Recent development of an automated measurement system is also discussed.

[Contact: Mark T. Ma , (303) 497-3800]

Rand a, J.P., and Kanda, M., A New

Approach to Volumes Irradiated by

Unknown Sources, IEEE Transactions on Electromagnetic Compatibility, Vol.

EMC-29, No. 4, pp. 273-281 (November

1 987)

We suggest an approach to the characterization of electromagnetic environments

irradiated by unknown sources. The

approach is based on the numerical solution of Maxwell's equations subject to

the constraints imposed by the measured

values of the field at a small number of

measurement points and by boundary con- ditions. A thorough examination of a method for the numerical solution is

presented. The examples attempted

demonstrate the approach but reveal

deficiencies in the numerical method.

Possible future directions are suggested.

[Contact: James P, Randa, (303)

497-31 50]

Wilson, P.F., and Ma, M.T., Techniques

for Measuring the Shielding Effectiveness of Materials, Proceedings of the

7th International Symposium and Technical Exhibition on EMC, Zurich, Switzerland, March 3-5, 1987, pp. 547-552, [A

more complete version appeared as NBS

Technical Note 1 095 (May 1 986).]

Four methods for measuring the shielding

effectiveness of materials under various

conditions are considered. Coaxial

transmission line holders and a timedomain system are used to simulate

plane-wave shielding performance. The

dual (TEM) cell and an apertured TEM

cell in a reverberating chamber are used

to investigate near-field shielding

capability. Both theoretical and

experimental results are discussed.

[Contact: Perry F, Wilson, (303)

497-3842]
Page 34 CEEE Technical Progress Bulletin - June 1988

Radiated EMI (cont'd.)

Wu, D.I., and Chang, D.C., An Investigation of a Ray-Mode Representation of

the Green's Function in a Rectangular

Cavity, NBS Technical Note 1312 (September 1 987) .

In a rectangular cavity, it is well

known that a point source-excited field

can be represented either in terms of

summation of modes or in terms of rays

produced by the equivalent image

sources. Both representations involve

series that are slowly convergent, so computation of fields inside the cavity

is difficult. To obtain a numerically

efficient scheme, a h^rid ray-mode

representation is developed here using

the finite Poisson summation formula.

The modal representation is modified in

such a way that all the modes near

resonance are retained while the truncated remainder of the mode series is

expressed in terms of a weighted contribution of rays. For a large cavity, the

contribution of rays from far away

images becomes small; therefore, the ray

sum can be approximated by one or two

dominant terms without a loss of numerical accuracy. To illustrate the accuracy and the computational simplification

of this ray-mode representation, numerical examples are included with the conventional mode series (simmed at the

expense of long computation time) serv- ing as a reference.

[Contact: Doris I. Wu, (303) 497-3842]

Conducted Electromagnetic Interference

Released for Publication

Martzloff, F.D., Power Quality Measurements: Bringing Order Out of

Chaos, to be published in the Proceedings of the Energy Technology Conference, Washington, D.C., February

1 7-19, 1 988.

The quality of the power supplied to

sensitive electronic equipment is an important issue. Quantifying this quality, however, is difficult under the

present state of nonexistent or unco- ordinated standards concerning two

related questions: (1) what levels of

power quality are required for what

types of loads, and (2) what measurement

techniques are required to determine

reliably the level of disturbances that

reduce quality. Development of standards by the consensus process and

voluntary compliance, although a slow

process, is a mechanism for reachinq

technically sound and cost-effective

solutions. Several standards .projects

are in progress, but need industry-v^ide

support to become the generally accepted

basis for valid and useful measurements

of power quality.

[Contact: Francois D. Martzloff, (301)

975-2409]

ADDITIONAL INFORMATION

Lists of Publications

Gibson, K.A., Page, J.M., and Miller,

C .K . S . , A Bibliography of the NBS

Electromagnetic Fields Division Publications , NBSIR 85-3040 (February

1 986)

This bibliography lists publications of

the National Bureau of Standards' Electromagnetic Fields Division for the

period from January 1984 through September 1985, with selected earlier publications from the Division' s predecessor

organizations

[Contact: Kathryn A. Gibson, (303)

497-31 32]

Kline, K.E., and DeWeese, M.E., Metrology for Electromagnetic Technology:

A Bibliography of NBS Publications,

NBSIR 87-3074 (June 1987).

This bibliography lists the publications

of the personnel of the Electromagnetic

Technology Division of NBS in the period

from January 1970 through December 1986.

A few earlier references that are directly related to the present work of

the Division are included.

[Contact: Sarabeth Moynihan, (303)

497-3678]
CEEE Technical Progress Bulletin - June 1988 Paqe 35

Lists of Pi±>lications (cont'd.)

Palla, J.C., and Meiselman, B., Electrical and Electronic Metrology: A

Bibliography of NBS Electrosystems

Division Publications, NBS List of

Publications 94 (January 1988).

This bibliography covers publications of

the Electrosystems Division, Center for

Electronics and Electrical Engineering,

NBS, and of its predecessor sections for

the period January 1963 to January 1988.

A brief description of the Division's

technical program is given in the introduction.

[Contact: Jenny C. Palla, (301)

975-2220]

Walters, E.J. , Semiconductor Measurement Technology, NBS List of Publications 72, [a bibliography of NBS

publications for the years 1962-1987]

( March 1 988)

This bibliography contains reports of

work performed at the National Bureau of

Standards in the field of Semiconductor

Measurement Technology in the period

from 1962 through December 1987. An

index by topic area and a list of

authors are provided.

[Contact: E. Jane Walters, (301)

975-2050]

1988 CEEE Calendar

September 12-14, 1988 (San Jose, CA)

VLSI and GaAs Chip Packaging Workshop.

This Workshop is co-sponsored by the

Components, Hybrids, and Manufacturing

Technology Society of IEEE and NBS;

attendees are expected to be knowledgeable in the field and to participate in

discussions. Topic areas include: VLSI

and wafer-scale package design (characterization and implementation, cost and

performance-driven solutions); package

thermal design (characteristics, re- sults, and issues) ; package interconnection options (wire bonding, TAB, flip

chip, or optical) ; GaAs IC packaging

(high-speed packaging considerations);

package electrical issues (reduction of

parasitics, improvements in electrical

performance, reduction in line resistance); integrating package design (from

die to system, including assemblv and

test issues); VLSI package materials

advancements; die-attach solutions for

large chips; and new failure mechanisms

in VLSI packaging. [Contact: George G.

Harman, (301) 975-2097]

Planned

Early summer (Vail, CO)

Combined Short Course on Optical Fiber

and Laser Measurements. [Contact:

Aaron A. Sanders, (303) 497-5341]

Early fall (Boulder, CO)

Fiber Optics Symposium. [Contact:

Aaron A. Sanders, (303) 497-5341]

Late fall (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers (20th Boulder Damage

Symposium). [Contact: Aaron A.

Sanders, (303) 497-5341]

CEEE SPONSORS

National Bureau of Standards

Department of Defense

Defense Nuclear Agency; Defense

Advanced Research Projects

Agency; National Security Agency;

Combined Army/Navy/Air Force

Calibration Coordination Group

U.S. Air Force

Newark Air Force Station; Rome

Air Development Center; Space & Missile Organization; U.S. Air

Force Headquarters;

Wr ight-Pa tterson Air Force Base;

Technical Applications Center;

Kirtland Air Force Base;

Cryptological Support Center

U.S. Army

Fort Belvoir; Fort Monmouth;

Harry Diamond Laboratory;

Materials & Mechanics Research

Center; Redstone Arsenal;
Page 36 CEEE Technical Progress Bulletin - June 1988

CEEE Sponsors (cont'd.)

Strategic Defense Command;

AVRADCOM (Aviation); Fort

Huachuca

U.S. Navy

Naval Ocean Systems Center;

Weapons Support Center/Crane;

Office of Naval Research; Naval

Sea Systems Command; Naval

Postgraduate School; Naval Ship

Research Development Center;

Naval Air Systems Command; Naval

Research Laboratory; Aviation

Logistics Center/Patuxent; Naval

Explosive Ordnance

Department of Commerce

Patent and Trademark Office

Department of Energy

Energy Systems Research; Fusion

Energy; High Energy & Nuclear

Physics; Bonneville Power

Administration

Department of Justice

Law Enforcement Assistance

Administration

National Aeronautics and Space

Administration

Goddard Space Flight Center;

Lewis Research Center

Nuclear Regulatory Commission

Department of Transportation

National Highway Traffic Safety

Administration

Sandia National Laboratories
NBS»114A (REV. 2»8C) U.S. DEPT. OF COMM.

BIBLIOGRAPHIC DATA

1. PUBLICATION OR

REPORT NO.

2. Performing Organ. Report No. 3. Publication Date

SHEET (See instructions) NBSIR 88-3762 June 1988

4. TITLE AND SUBTITLE

Center for Electronics and Electrical Engineering Technical Progress Bulletin Covering

Center Programs, October to December 1987 with 1988 CEEE Events Calendar

5. AUTHOR(S)

E. Jane Walters, compiler

6. PERFORMING ORGANIZATION (If joint or other than NBS, see instructions) 7 . Contract/Grant No. NATIONAL BUREAU OF STANDARDS -

U.S. DEPARTMENT OF COMMERCE

GAITHERSBURG, MD 20899

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City. State. ZIP)

. Type of Report & Period Covered

October-December 1987

10. SUPPLEMENTARY NOTES

All technical information included in this document has been approved for publication

previously.

I I Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bibliography or literature survey, mention it here)

This is the twenty-first issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. This issue of the CEEE Technical Progress Bulletin covers

the fourth quarter of calendar year 1987. Abstracts are provided by technical area

for both published papers and papers approved by NBS for publication.

12. KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolon s) antennas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers; semiconductors; superconductors

13. AVAILABILITY 14. NO. OF

PRINTED PAGES

Unlimited

1 1 For Official Distribution. Do Not Release to NTIS 40

1 1 Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C.

20402. 15. Price

Order From National Technical Information Service (NTIS), Springfield, VA. 22161

$11.95

USCOMM-DC 6043-P80
U.S DEPARTMENT OF COMMERCE

NATIONAL BUREAU OF STANOAROS

GAITHERSBURG. MD 20899

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KEY CONTACTS; Center Headquarters (720) Director, Mr. Judson C. French (301) 975-2220

Deputy Director, Mr. Robert I. Scace (301) 075-2220

Electrosystems Division (722) Chief, Dr. Oskars Petersons (301) 975-2400

Electromagnetic Fields Division (723) Chief, Dr. Ramon C. Baird (303) 497-3131

Electromagnetic Technology Division (724) Chief, Dr. Robert A. Kamper (303) 497-3535

Semiconductor Electronics Division (727) Chief, Mr. Frank F. Oettinger (301) 975-2054

INFORMATION:

For additional Information on the Center for Electronics and Electrical Engineering, write or call:

Center for Electronics and Electrical Engineering

National Bureau of Standards

Metrology Building, Room B-358

Gaithersburg, MD 20899

Telephone (301) 975-2220