PUBLICATIONS

NBSIR 87-3697

A 11 ID 2 7 5 3 1 flfl Center for Electronics and

Electrical Engineering

Technical

Publication

Announcements

Covering Center Programs,

April to June 1987, 13

with 1988 CEEE Events Calendar

December 1987

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899
INTRODUCTION TO THE CEEE TECHNICAL PUBLICATION ANNOUNCEMENTS

This is the thirteenth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and Electrical Engineering. This issue of the CEEE Technical Publication Announcements

covers the second quarter of calendar year 1987.

Organization of Bulletin : This issue contains citations and abstracts for Center

papers published in the quarter. Entries are arranged by technical topic as identified in the table of contents and alphabetically by first author within each topic.

Following each abstract is the name and telephone number of the individual to contact

for more information on the topic (usually the first author). This issue also includes a calendar of Center conferences and workshops planned for calendar year 1987,

some preliminary events for 1988, and a list of sponsors of the work.

Center for Electronics and Electrical Engineering : Center programs provide national

reference standards, measurement methods, supporting theory and data, and traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U.S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor Technology Program, carried out by the Semiconductor Electronics Division in Gaithersburg, MD, and the Signals and Systems Metrology Program, carried out by the Electrosystems Division in Gaithersburg and the Electromagnetic Fields and Electromagnetic

Technology Divisions in Boulder, CO. See the table of contents on the opposite page

for identification of the topics covered by each program, as represented in this

issue. Key contacts in the Center are given on the back cover; readers are

encouraged to contact any of these individuals for further information.

Center sponsors : The Center Programs are sponsored by the National Bureau of Standards and a number of other organizations, in both the Federal and private sectors;

these are identified on page 20.

Note on Publication Lists : Guides to earlier as well as recent work are the publication lists covering the work of each division. These lists are revised and reissued

on an approximately annual basis and are available from the originating division.

The current set is identified in the Additional Information section, page 18.
National Bureau of Standards

Gaithersburg, Maryland 20899

CEEE Technical Publication Announcements - December 1987

no

TABLE OF CONTENTS

Page 1

INTRODUCTION inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM

Silicon Materials 2

Dimensional Metrology ... 2

Integrated Circuit Test Structures ..... 3

Power Devices ..... 3

Insulators and Interfaces 4

FAST SIGNAL ACQUISITION/ PROCESSING/ & TRANSMISSION 5

Waveform Metrology 5

Cryoelectronic Metrology . 6

Antenna Metrology 8

Laser Metrology 9

Microwave and Mil lime ter-Wave Metrology 9

Optical Fiber Metrology ............ 10

Electro-Optic Metrology .....11

Complex Testing ..12

Other Fast Signal Topics 13

ELECTRICAL SYSTEMS 13

Power Systems Metrology 13

Superconductors 14

Magnetic Materials and Measurements 14

ELECTROMAGNETIC INTERFERENCE 15

Radiated Electromagnetic Interference 15

Conducted Electromagnetic Interference ...17

ADDITIONAL INFORMATION 18

1988 CEEE CALENDAR 19

SPONSOR LIST 2 0

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 2 CEEE Technical Publication Announcements - December 87

SEMICONDUCTOR TECHNOLOGY

Silicon Materials

Hyland, S.L., Ast, P.G. , and Baghdadi,

A . , Oxygen Measurements in Thin Ribbon Silicon, Journal of Crystal

Growth (Proceedings of the First International Symposium on Shaped Crystal

Growth, Budapest, Hungary, July 22-25,

1 986), Vol. 82, Nos. (1/2), pp. 191-196

(North Holland, Amsterdam, 1987).

The oxygen content of thin silicon ribbons grown by the dendritic web technique was measured using a modification

of the ASTM method based on Fourier

transform infrared spectroscopy. Web

silicon was found to have a high oxygen

content, ranging from 13 to 19 ppma,

calculated using the new ASTM conversion

coefficient. The oxygen concentration

changed by about 10% along the growth

direction of the ribbon. In some samples, a shoulder was detected on the

absorption peak associated with interstitial oxygen. A similar shoulder in

C zochralski-grown material has been

variously interpreted in the literature

as due to a complex of silicon, oxygen,

and vacancies, or to a phase of SiC>

2

developed along dislocations in the

material. In the case of web silicon,

it is not clear which is the correct

interpretation of this peak.

[Contact: Aslan Baghdadi, (301)

975-2062]

Mayo, S., and Lowney, J.R., Photoionization Cross-Section Studies of the

Platinum-Donor Center in Silicon,

Journal of Applied Physics, Vol. 61,

No. 7, pp. 2626-2632 (1 April 1987).

The relative photoionization cross section of the platinum donor center in

silicon was measured over the wavelength

range of 2.4 to 3.9 pm by electrical

deep-level optical spectroscopy (DLOS)

on an n

+ p junction at 80 K. The data

were analyzed in terms of the latticecoupling model proposed by Ridley and

Amato, which was modified for valence

band nonparabolicity . Good agreement

was obtained between the experimental

results and the model calculations of

the cross section with the energy level

of the donor at 0.320 ± 0.005 eV above

the valence band edge and a Huang- Rhys

factor S of approximately 1.4. This Svalue corresponds to a Franck-Condon

energy shift of 70 meV with a phonon

energy of 50 meV. Previously reported

photoionization data of the gold donor

were also fit by the same model yielding

S - 0.4, a surprisingly small value.

Estimates were made of the majority

carrier capture cross section for these

two levels and for the platinum acceptor

center in silicon which was measured

previously. These estimates, based on

Ridley's quantum defect model and our

measured S- values, are several orders of

magnitude smaller than the corresponding

measured values, indicative of the complex nature of these 5d-transition elements in silicon. More elaborate models, perhaps including anharmonicity of

the defect vibrations, are required to

understand these large capture cross

sections.

[Contact: Santos Mayo, (301) 975-2045]

Dimensional Metrology

Postek, M.T., Non-Destructive Submicron Dimensional Metrology Using the

Scanning Electron Microscope, Review

of Progress in NDE, Vol. 6B, D.O.

Thompson and D.E. Chimenti, eds

.

(Plenum Publishing Corporation, 1987),

pp. 1327-1338.

The increasing evolution of microelectronics into the submicron region necessitates non-destructive examination of

these structures both for linewidth

measurement and defect inspection by

systems other than the optical microscope. The scanning electron microscope

operated in the low beam-voltage mode

has been recently employed in this work

due to its potentially high spatial

resolution and depth of field. This

paper discusses realistic applications

of the scanning electron microscope to

non-destructive microelectronics inspection and metrology in light of the pres-
CEEE Technical Publication Announcements - December 87 Page 3

Dimensional Metrology (cont'd.)

ent instrument specifications and capabilities and relates them to the processing controls required for submicron

metrology

.

[Contact: Michael T. Postek, (301)

975-2299]

Postek, M.T., and Joy, D.C., Submicrometer Microelectronics Dimensional

Metrology: Scanning Electron Microscopy, MbS Journal of Research, Vol.

92, No. 3, pp. 205-228 (May-June

1 987) .

The increasing integration of microelectronics into the submicron region for

VHSIC and VLSI applications necessitates

the examination of these structures both

for linewidth measurement and defect

inspection by systems other than the

optical microscope. The low beam-voltage scanning electron microscope has

been recently employed in this work due

to its potentially high spatial resolution and large depth of field. This

paper discusses applications of the

scanning electron microscope to microelectronics inspection and metrology in

light of the present instrument specifications and capabilities, and relates

them to the processing controls required

for submicron processing.

[Contact: Michael T. Postek, (301)

975-2299]

Integrated Circuit Test Structures

Linholpi, L.W., Radack, D.J., Reeve,

C.P., Cresswell, M.W., Lowry, L.R., and

Pessall, N., Test Structures and

Expert Systems for Process Control,

Proceedings of SEMICON/West ! 87, San

Mateo, California, May 19-21, 1987, pp.

54-64.

This paper describes the test structures, test results, data analysis algorithms, and a developmental expert system which can be used as a means of

improving selected aspects of process

control. A prototype ejqpert system has

been developed to allow rapid evaluation

of selected portions of a 1-ym fabrication process. Test results from custom

designed test chips containing a variety

of structures comprise the input to the

expert system. The output is an

English-language process diagnosis.

Examples of a diagnosis provided by the

expert system for selected portions of a VLSI process are presented.

[Contact: Loren W. Linholm, (301)

975-2052]

Schafft, H.A., STATUS: Interlaboratory Electromigration Experiment,

Proceedings of the 1985 Wafer Reliability Assessment Workshop, Lake Tahoe,

California, October 21-23, 1985, O.D.

Trapp, ed. , pp. 213-216 (1986).

An update is presented of an interlaboratory electromigration experiment now

underway. The purpose of the experiment

is to assess the reproducibility of

electromigration characterizations and

to develop guidelines for the design of

test structures, for methods to measure

t 5Q , and for reporting characterization

results. Fourteen laboratories, including two universities, are participating

in the experiment.

[Contact: Harry A. Schafft, (301)

975-2234]

Power Devices

Blackburn, D.L., Turn-Off Failure of

Power MOSFET’s, IEEE Transactions on

Power Electronics, Vol. PE-2, No. 2,

pp. 136-142 (April 1987). [Identical

paper appeared in PESC '85, Proceedings

of the Power Electronics Specialists

Conference, Toulouse, France, June

24-28, 1985, pp. 429-435.]

Experimental results of the failure of

power MOSFET's during inductive turn-off

are discussed. The electrical characteristics of these devices during failure are shown to be identical to those

of a bipolar transistor undergoing

second breakdown. Other comparisons of

the power MOSFET failure and bipolar

second breakdown are made. A nondestructive measurement system is used
Page 4 CEEE Technical Publication Announcements - December 87

Power Devices (cont'd.)

that allows repeated measurements of the

failure characteristics as a function of

various parameters to be made on a single device. It is shown that commercially available power MOSFETs do not

fail as a result of dV/dt currents.

Drain voltage slew rates up to 22 V/ns

were studied. Other measurements show

that the drain voltage at which failure

occurs increases with temperature, the

critical current above which failure

occurs decreases with temperature, and

the magnitude of the load inductance has

no effect on the failure. The results

of this study are consistent with the

theory that activation of the parasitic

bipolar transistor initiates the power

MOSFET failure during turn-off.

[Contact: David L. Blackburn, (301)

975-2053]

Insulators and Interfaces

Carver, G.P., Novotny, D.B., Hershey,

R., and Luther, J.E., Double-Level

Metallization: Annual Report for

October 1, 1985 to September 30,

1986, NBSIR 87-3579 (June 1987).

An outline for a double-level metal

process for the fabrication of circuits

having a minimum linewidth of 3 ym is

described. The process is designed to

be implemented in the Microelectronics

Processing Facility at Fort Meade, Maryland, where single-level metallization

circuits are already in production. A

summary is included of the related

research performed in the Semiconductor

Processing Research Laboratory at the

National Bureau of Standards.

[Contact: Gary P. Carver, (301)

975-2091]

Chandler-Horowi tz , D. , and Candela,

G.A., Ellipsometric Instrumentation

for Optical Metrology in Thin Films,

Proceedings of SEMICON/West '87, San

Mateo, California, May 19-21, 1987, pp.

1 26-1 32.

Nondestructive optical characterization

of thin-film structures on substrates by

ellipsometry is a precise measurement

technique which may lead to accurate

metrology. In order to study problems

important to semiconductor technology,

we have built a spectroscopic, multiangle of incidence, rotating-analyzer

ellipsome ter. The primary metrological

requirement for accuracy is to obtain

the uncertainties in the instrumental

data for a particular sample surface.

These data are the ellipsometric values

for A, 1

1>, the angle of incidence <[>, and

the wavelength X. Then a mathematical

analysis involving surface modeling is

performed to find both the best values

of the film parameters and their uncertainties. In practice there are conditions which can optimize both the uncertainties in A and i|>, and the resulting

uncertainties in the film parameters.

Both the angles of incidence and of the

polarizer can be adjusted for optimum

accuracy in determining the values for A

and ^ when the instrument is used in the

rotating-analyzer mode. The ability of

this instrument with its increased accuracy can lead to a better understanding

of complex multilayered samples, such as

proposed semiconductor device starting

materials, e.g., SIMOX.

[Contact: Deane Chandler-Horowi tz

(301) 975-2084]

Mountain, D.J. , Galloway, K.F., and

Russell, T.J., The Effect ©£ PostOxidation Anneal on the Electrical

Characteristics of Thin Oxides,

Journal of the Electrochemical Society,

Vol. 134, No. 3, pp. 747-479 (March

1987)

In this study, the effects of pre- and

post-oxidation treatments on thin

(~20-nm) gate oxide properties have been

evaluated. Pre-oxidation cleans and

post-oxidation anneal (POA) times and

ambients were compared. Flatband

voltage, oxide field breakdown, and

average density of interface trap

measurements were used to evaluate the

different sequences. The data indicate

that an optimum oxidation sequence for

thin gate oxides can be designed. A
CEEE Technical Publication Announcements - December 87 Page 5

Insulators and Interfaces (cont'd.

)

sacrificial oxidation cleaning procedure

and a long (1 20-min) POA in nitrogen

gave the oxide with the best electrical

characteristics.

[Contact: Thomas J. Russell, (301)

9 75-2073]

FAST SIGNAL ACQUISITION, PROCESSING,

AND TRANSMISSION

Waveform Metrology

Sorrells, J.R., A Survey of Electronic

Measurement Needs Below 10 MHz, NBSIR

87-3549 (June 1987).

The results of a survey to assess the

electronic measurement needs from dc to

1 0 MHz are presented. The questionnaire

used in the survey covered three broad

areas of measurement need: 1) basic

electrical quantities and related precision instruments, 2) automatic test

equipment and other complex measurement

systems, and 3) conducted electromagnetic interference. The data provided

by 527 respondents are summarized, and

the results of various analyses are

described. Several conclusions, suggested by the analyses, are also discussed.

[Contact: Barry A. Bell, (301)

975-2402]

Souders, T.M., Schoenwe tter, H.K. , and

Hetrick, P.S., Characterization of a

Sampling Voltage Tracker for Measuring

Fast, Repetitive Signals, Proceedings

of the IEEE Instrumentation and Measurement Technology Conference,

IMTC/87, Boston, Massachusetts, April

27-29, 1987, pp. 240-243.

An equivalent time-sampling and digitizing system is described, together with

test methods for characterizing its

dynamic performance. Time-base errors,

linearity errors, step-response parameters, and frequency response are considered, and typical measurement results

are included. The system is capable of

state-of-the-art measurements at rf

frequencies.

[Contact: T. Michael Souders, (301)

975-2406]

Stenbakken, G.N., Characterizing

Square and Triangular Waveforms,

Proceedings of the IEEE Instrumentation

and Measurement Technology Conference,

IMTC/87, Boston, Massachusetts, April

27-29, 1987, pp. 9-11.

A method has been developed for determining the parameters and errors of

square and triangular waveforms relative

to idealized waveforms, even when the

waveforms to be characterized are highly

distorted. The method is based on measurements obtained by sampling the waveform. Then, an idealized waveform is

fitted to the sampled data using a least-squared-error algorithm. The

errors in the waveform are defined as

the deviations between the data samples

and the ideal waveform. Also, the

parameters of the measured waveform are

defined as the corresponding parameters

of the fitted ideal waveform.

[Contact: Gerard N. Stenbakken, (301)

975-2440]

Stenbakken, G.N., Laug, O.B., Kibalo,

T.H., Bell, B.A., and Perrey, A.G. , NBS Wideband Sampling Wattmeter, NBS

Technical Note 1221 (May 1987).

The design and operation of a wideband

sampling wattmeter capable of measuring

distorted power signals with fundamental

frequencies from 1 Hz to 1 0 kHz and

harmonics up to 100 kHz is described.

The mi crocorrputer-con trolled wattmeter

uses asynchronous sampling of the voltage and current signals. The errors

associated with this type of operation

are described, as are various methods of

correcting some of these errors. A

hardware multiplier-accumulator allows

a large number of power signal samples

to be integrated for each measurement.

Sampling rates are variable up to a maximum of 300 kHz. A direct-memoryaccess unit is used to capture 4096

samples of both the voltage and current

signals. These data are used to calcu-
Page 6 CEEE Technical Publication Announcements - December 87

Wavetorm Metrology (cont'd.

late the average and rms values of these

signals.

A special feature of the sampling wattmeter is the use of programmable time

delay circuits to compensate for differential time delays between the two input

channels. Performance tests of the

wattmeter show that it has a measurement

uncertainty of less than ±0.1 percent of

full-scale amplitude over the abovedescribed frequency range.

This technical note gives schematic

diagrams of the circuits used in this

wattmeter and describes their operation.

The software is also described, and flow

charts and selected program listings are

provided tor the programs written in

PASCAL. The results of calibration of

the instrument over the past year are

also presented.

[Contact: Gerald N. Stenbakken, (301)

975-2440]

Turgel, R.S., and Vecchia, D.F., Precision Calibration of Phase Meters,

Proceedings of the IEEE Instrumentation

and Measurement Technology Conference,

IMTC/87, Boston, Massachusetts, April

27-29, 1987, pp. 135-1 37.

A procedure and statistical analysis for

the calibration of precision phase

meters has been aeve loped. The method

can be applied equally to the calibration of any instrument that has a nominally . linear response characteristic.

Using statistical tests, the method

checks whether the calibration data fit

a linear model and then determines the

linear equation from which the corrected

calibration values are computed. Because random fluctuations tend to mask

the limiting mean of the instrument

response, the corrections are based on

the values computed from the calibration

curve, rather than on the actual calibration data.

To obtain the data, test points are

chosen to cover the range to be calibrated, and several sets of calibration

readings are taken by comparing the

instrument under test to a standard.

The replication of the data at the

selected test points serves to characterize the repeatability and to decide

whether the linear model is appropriate.

If the assumption of a linear model is

correct, the data are fitted to a straight line (calibration curve), and

statistical tests are used to determine

if the slope and intercept of the calibration curve are significantly different from their ideal values.

As a next step, the error limits of the

readings from the instrument under test

are computed for three conditions: no

corrections applied, only a constant

correction applied, and the full calibration curve used for the corrections.

The three error limits are then compared

to the instrument specifications to

determine which type of calibration

correction, if any, is needed.

[Contact: Raymond S. Turgel, (301)

975-2420]

Cryoelectronic Metrology

Cirillo, M., and Lloyd, F.L., Phase

Lock of a Long Josephson Junction to an

External Microwave Source, Journal

of Applied Physics, Vol. 61, No. 7, pp.

2581-2585 (April 1987).

A long Josephson junction dc biased on a zero-field singularity and emitting

radiation at microwave frequencies is

irradiated with external microwave

power. This power can be supplied

either by a room- temperature oscillator

or by another long junction. We find

that the oscillations of the junction

can lock coherently to the external

signal for frequency intervals ranging

from 500 kHz to 50 MHz. The dependence

of the width of these intervals of

coherence on the external microwave

power is measured for the case in which

the power is generated by a room- temperature oscillator.

[Contact: Frances L. Lloyd, (303)

497-3254 or 3988]
CEEE Technical Publication Announcements - December 87 Page 7

Cryoelectronic Metrology (cont'd.)

Crete, D.G., McGrath, W.R., Richards,

P.L., and Lloyd, F.L., Performance of

Arrays of SIS Junctions in Heterodyne

Mixers, IEEE Transactions on Microwave Theory and Techniques, Vol. MTT35, No. 4, pp. 435-440 (April 1987).

We have made a systematic experimental

study of the performance of millimeterwave quasiparticle heterodyne mixers

which use arrays of superconduct or- insulator-superconductor (SIS) tunnel junctions. Sets of arrays with N = 1, 5,

10, 25, and 50 junctions in series were

fabricated by photolithography. All of

the arrays in a given set were made on a single wafer so that their response time

parameters ^S R

N

C were the same ( u)s = signal frequency; RN = junction

normal-state resistance; C = junction

capacitance). Junction areas were

scaled so that the total impedance was

the same for each array in a set. Sets

of arrays from four wafers with values

of u) s R

nC ranging from 2.6 to 13 were

evaluated in mixers at 33 and 36 GHz.

These measurements showed that the

signal power required to saturate the

mixers varies as N

2

, and the conversion

efficiency is nearly independent of N

for all values of a)gRN

C. The mixer

noise temperature is independent of N

for large values of wgR^C. Therefore, the dynamic range of an SIS quasiparticle mixer can increase in proportion to N

2 . For small values of

cogR^C, however, the mixer noise

increases systematically with N. This

correlation suggests that the junction

capacitance affects the coupling between

junctions that can contribute to the

noise.

[Contact: Frances L. Lloyd, (303) 497-

3254]

McDonald, D.G., Novel Superconducting

Thermometer for Bolometric Applications, Applied Physics Letters, Vol.

50, No. 12, pp. 775-777 (March 23,

1 987)

.

The temperature dependence of the magnetic penetration depth in a superconductor is proposed as a basis for a sensitive thermometer. This depth is

monitored through the inductance of a microstrip transmission line, which is

incorporated into an impedance measuring

bridge. The bridge is envisioned as an

integrated circuit with all critical

components at low temperature. It is

estimated that the contribution to the

noise equivalent power by the sum of the

Josephson noise and the preamplifier

noise can be reduced to about 7 x 10“ 2 ^ watt per root hertz, which is approximately four orders of magnitude below

currently realized values. Performance

of this device as a bolometer is limited

by noise from the thermal conductance of

the bolometer mount with the present

state of the art.

[Contact: Donald G. McDonald, (303)

497-5113]

Raisanen, A.V., Crete, D.G., Richards,

P.L., and Lloyd, F.L., Low Noise SIS

Mixer with Gain for 80-115 GHz, Proceedings of the ESA Workshop on a Space- Borne Sub-Millimetre Astronomy

Mission, Segovia, Spain, June 4-7,

1986, pp. 255-258 (European Space

Agency, Paris, France, 1986). [See

also a more extensive paper by the same

authors published in the International

Journal of Infrared and Millimeter

Waves, Vol. 7, No. 12, pp. 1835-1852

(1986) .]

Several superconductor-insulatorsuperconduc tor (SIS) quasiparticle mixers have been designed and tested for

the frequency range from 80 to 115 GHz.

The sliding backshort is the only adjustable radiofrequency (RF) tuning element. The RF-filter reactance is used

as a fixed RF-matching element. A mixer

which uses a single 2x2 ym 2 Pb-alloy

junction in a 1 /4-height waveguide mount

has a coupled conversion gain of

GM (double sideband [DSB] ) = 2.6 ± 0.5

dB with an associated noise temperature

of Tm(DSB) = 16.4 ± 1 .8 K at the best

DSB operation point. The receiver noise

temperature Tr (DSB) is 27.5 ± 0.8 K.

This mixer provides a single-sideband
Page 8 CEEE Technical Publication Announcements - December 87

Cryoelectronic Metrology (cont'd.

( SSB) receiver noise temperature below

50 K over the frequency range from 91 to

96 GHz , the minimum being TR (SSB) = 44

± 4 K.

[Contact: Frances L. Lloyd, (303)

497-3254 or -3988]

Raisanen, A.V., Crete, D.G. , Richards,

P.L., and Lloyd, F.L., Hide-Band Low

Noise MM-Wave SIS Mixers With a Single

Tuning Element, International Journal

of Infrared and Millimeter Waves, Vol.

7, No. 12, pp. 1835-1852 (1 986).

Several superconductor-insulatorsuperconductor (SIS) quasi-particle

mixers have been designed and tested for

the frequency range from 80 to 115 GHz.

The sliding backshort is the only adjustable radiofrequency (RF) tuning element. The RF filter reactance is used

as a fixed RF matching element. A mixer

which uses a single 2x2 urn 2 Pb-alloy

junction in a quarter-height waveguide

mount has a coupled conversion gain of

GM(double sideband [DSB] ) = 2.6 - 0.5

dB with an associated noise temperature

of Tm (dSB) = 16.4 ± 1.8 K at the best

DSB operation point. The receiver noise

temperature Tr(DSB) is 27.5 ± 0.8 K

for the mixer test apparatus. This

mixer provides a single-sideband (SSB)

receiver noise temperature below 50 K

over the frequency range from 91 to 96

GHz, the minimum being TR (SSB) = 44 ± 4 K. Another mixer with an array of

five 5x5 pm2 junctions in series in a full-height-waveguide mount has much

lower noise temperature TM (DSB) = 6.6

± 1.6 K, but less gain G^(DSB) = -5.1

±0.5 dB.

[Contact: Frances L. Lloyd, (303)

497-3254 or -3988]

Antenna Metrology

FitzGerrell, R.G., Standard Linear

Antennas, 30 MHz to 1000 MHz, Proceedings of the Fifth International

Conference on Electromagnetic Compatibility, University of York, England,

September 29-October 2, 1986 (Sponsored

by the Institution of Electronic &

Radio Engineers, London, England), pp.

1 47-153.

Simple linear antennas are described

that are designed to operate in the 30-

MHz to 1 000-MHz frequency range. Commercial coaxial hybrid junctions are

used as balanced- to-unbalanced transmission line transformers (baluns) for the

dipole antennas. The monopoles are fed

unbalanced against a large ground

screen. Calculated site attenuation

(insertion loss) between pairs of these

antennas over an assumed perfectly conducting plane ground is compared to

insertion loss data measured using the

30 m by 60 m NBS ground screen. It is

assumed that one-half of the mean value

of the difference between the calculated

and measured insertion loss data,

expressed in decibels, is a good estimate of individual antenna performance.

For the antennas described here, this

measure of performance is typically

<0.05 dB and on the outside, <0.42 dB.

[Contact: Richard G. FitzGerrell, (303)

497-3737]

Muth, L.A., Displacement Errors in

Antenna Near-Field Measurements and

Their Effect on the Far Field, NBS

Technical Note 1306 (October 1986)

[also accepted for publication in IEEE

Transactions on Antennas and Propagation] •

The effects of probe-displacement errors

in the near-field measurement procedure

on the far-field spectrum are studied.

Expressions are derived for the displacement error functions that maximize

the fractional error in the spectrum

both for the on-axis and off-axis directions. Planar x-y and z-displacement

errors are studied first, and the

results generalized to position errors

in cylindrical and spherical scanning.

Near-field models are used to obtain

order-of-magnitude estimates for the

fractional error as a function of relevant scale lengths of the near field,

defined as the lengths over which significant variations occur.
CEEE Technical Publication Announcements - December 87 Page 9

Antenna Metrology (cont'd.

)

[Contact: Lorant A. Muth, (303)

497-3603]

Laser Metrology

Bennett, H.E., Guenther, A.H., Milam,

D., and Newnam, B.E., Laser Induced

Damage in Optical Materials: 1984,

MBS Special Publication 727 (October

1 98b)

.

The Sixteenth Annual Symposium on Optical Materials for High Power Lasers

(Boulder Damage Symposium) was held at

the National Bureau of Standards in

Boulder, Colorado, October 1 5-17, 1984.

The Symposium was held under the auspices of ASTM Committee F-1 , Subcommittee on Laser Standards, with the joint

sponsorship of NBS, the Defense Advanced

Research Projects Agency, the Department

of Energy, the Office of Naval Research,

and the Air Force Office of Scientific

Research. Approximately 200 scientists

attended tne Symposium, including representatives of the United Kingdom,

France, West Germany, and the Netherlands. The Symposium was divided into

sessions concerning Materials and Measurements, Mirrors and Surfaces, Thin

Films, and Fundamental Mechanisms. As

in previous years, the emphasis of the

papers presented at the Symposium was

directed toward new frontiers and new

developments. Particular emphasis was

given to materials for high power apparatus. The wavelength range of prime

interest was from 10.6 ym to the uv

region-. Highlights included surface

characterization, thin-f ilm- subs trate

boundaries, and advances in fundamental

laser-matter threshold interactions and

damage mechanisms. Harold E. Bennett of

the Naval Weapons Center, Arthur H.

Guenther of the Air Force Weapons Laboratory, David Milam of the Lawrence

Livermore National Laboratory, and Brian

E. Newnam of the Los Alamos National

Laboratory were co-chairmen of the Symposium. The Seventeenth Annual Symposium was scheduled for October 28-30, 1985

at the National Bureau of Standards,

Boulder.

[Contact: Aaron A. Sanders, (303)

497-5341]

Microwave and Millimeter-Wave Metrology

Adair, R., Reeve, G. , and Gatterer,

L.E., The Expanding Need for Microwave and Millimeter Wave Calibration

Services, National Conference of

Standards Laboratories Newsletter, Vol.

27, No. 1, pp. 21-31 (January 1987).

Several technology surveys concerning

microwave- and mi 1 lime ter-wave measurement needs and capabilities have recently been conducted by the National Bureau

of Standards Boulder Laboratories, and

other organizations. The results of

some of these studies which covered the

frequency range from 1 GHz to above 200

GHz are summarized. Current microwaveand mi 1 lime ter-wave standards and calibration capabilities at the National

Bureau of Standards are reviewed and

compared with national needs. The lack

of national standards in certain frequency bands may lead to problems with

the specification, acceptance testing,

calibration, and critical use of some

components and systems. Plans to fulfill unmet needs in the frequency range

are also presented.

[Contact: Gerome R. Reeve, (303)

497-3557]

Daywitt, W.C., A Simple Technique for

Determining Joint Losses on a Coaxial

Line from Swept-Frequency Reflectometer

Data, CP EM 86 Digest, 1986 Conference

on Precision Electromagnetic

Measurements, R.F. Dziuba, Editor,

National Bureau of Standards,

Gaithersburg, Maryland, June 23-27,

1986, p. 40.

A need to separate connector loss from

swept-f requency automatic network analyzer measurements to check an attenuation calculation for a low-loss, coaxial

line has led to a simple graphical technique for determining the connector

loss. It is also possible to determine

joint losses around center conductor
Page 1

CEEE Technical Publication Announcements - December 87

Microwave & Millimeter-Wave (cont'd.

bead supports on the line itself. Preliminary results indicate that losses in

the mi lli-decibel range can be determined to a precision of a few tenths of

a milli-decibel or better, even though

the data are obscured by considerable

connector loss and calibration error.

Results were checked by independent

measurements and show excellent agreement.

[Contact: William C. Daywitt, (303)

497-3720]

Engen, G.F., In Search of a More

Realistic Accuracy Statement for Microwave Metrology, 27th ARFTG (Automatic

RF Techniques Group) Conference Digest,

Baltimore, Maryland, June 5-6, 1986,

pp. 181-183 (August 1986).

The concept of "measurement accuracy" is

fundamental to all of metrology. Given

two different techniques for measuring

the same parameter, an evaluation of

their respective accuracies typically

plays a major role in an assessment of

their relative merit.

Historically, the accuracy achieved by

the microwave metrologist has been

limited by detector performance, hardware imperfections, and connector

problems. Today, the effect of hardware

imperfections has been largely eliminated oy more complete modeling. Moreover, the performance of the detection

systems has been improved to the point

where in many cases the non-ideal connector behavior is the major error

source. Although important refinements

in the connectors have also been

realized, it is quite possible that

these have not kept pace with the other

developments.

In any case, it is useful to pose the

following question: Assume a measurement system which, apart from being

fitted with connectors typical of those

in general use, is otherwise perfect.

How much measurement accuracy can one

realistically claim for it?

[Contact: William E. Little, (303)

497-5479]

McDonald, D.G. , Novel Superconducting

Thermometer for Bolometric Applications, Applied Physics Letters, Vol.

50, No. 12, pp. 775-777 (March 23,

1987) .

The temperature dependence of the magnetic penetration depth in a superconductor is proposed as a basis for a sensitive thermometer. This depth is

monitored through the inductance of a microstrip transmission line, which is

incorporated into an impedance measuring

bridge. The bridge is envisioned as an

integrated circuit with all critical

components at low temperature. It is

estimated that the contribution to the

noise equivalent power by the sum of the

Josephson noise and the preamplifier

noise can be reduced to about 7 x 10_2 ° watt per root hertz, which is approximately four orders of magnitude below

currently realized values. Performance

of this device as a bolometer is limited

by noise from the thermal conductance of

the bolometer mount with the present

state of the art.

[Contact: Donald G. McDonald, (303)

497-5113]

Optical Fiber Metrology

Day, G. W., Compact Fiber Sensors for

the Measurement of Low Level Electric

Currents, Proceedings of the 4th

International Conference on Optical

Fiber Sensors, Tokyo, Japan, October

7-9, 1986, pp. 81-84.

Recent progress in the development of

fiber current sensors includes the

fabrication of low-loss, lowbirefringence, 3-cm diameter coils by

annealing, and the demonstration of a noise equivalent current of 180

microamperes per root Hertz.

[Contact: Gordon W. Day, (303)

497-5204]

Engelsrath, A., Danielson, B.L., and

Franzen, D.L. , Attenuation Measure-
CEEE Technical Publication Announcements - December 87 Page 1

1

Optical Fiber Metrology (cont'd.

)

meats on Deformed Optical Fibers,

NBSIR 86-3052 (July 1986).

Attenuation measurements were made on

several different optical fibers subjected to bending, tension, twisting,

and overlapping. The measurements were

performed with an optical time-domain

r ef lectometer which gives a partial

separation between the various contributions to the measured deformation loss.

The graded- and step-index multimode

fibers had a variety of different dimensions and coatings. The results of

bending attenuation are compared with

models and other reported experimental

loss data. Based on the results of the

present experiments, an empirical model

has been derived which permits a prediction of the smallest bend radius consistent with a given allowed attenuation.

[Contact: Bruce L. Danielson, (303)

497-5620]

Franzen, D.L. , Standard Measurement

Procedures for Characterizing SingleMode Fiber, Conference Digest, Test &

Measurement World Expo, San Jose,

California, April 8-10, 1986, pp.

70-77 (October 1986).

Parameters used to describe single-mode

fiber include attenuation, cut-off wavelength, mode-field diameter, and dispersion. Some measurement results depend

on test-fiber condition and testing

me thods • [Contact: Douglas L. Franzen, (303)

497-3346 or -5342]

Gallawa, R.L., and Li, X., Calibration

of Optical Fiber Power Meters: The

Effect of Connectors, Applied Optics,

Vol. 26, Mo. 7, pp. 1170-1174 (April

1 987) .

This paper addresses the question of

accurate measurement of optical power at

the wavelengths and power levels of

interest to the telecommunications community. In particular, we examine the

calibration of power meters that are

destined for use in a field environment.

Connectors and adapters are shown to

skew the measurements, leading to errors

attributable to reflections from the

connector or to angular dependence of

detector response. Calibration data are

taken using two popular connector types:

a biconic and an SMA type. The data are

sufficient to illustrate the problem but

definitive conclusions cannot be drawn

regarding variability of performance

with connector or connector type,

because of the limited data.

[Contact: Robert L. Gallawa, (303)

497-3761]

Maisonneuve, J. , and Gallawa, R.L.,

The Use of Power Transfer Matrices in

Predicting System Loss: Theory and

Experiment, Fiber and Integrated

Optics, Vol. 6, No. 1, pp. 11-26

(1 985) .

The phase space diagram for parabolic

and step-index fibers leads to a graphic

representation of the bound, leaky, and

refracted rays of ray theory. This

concept is used to predict the attenuation of typical components of local area

networks. The technique uses power

transfer matrices to track the evolution

of power distribution in ray packets.

In particular, we predict and then measure the power transfer of two ray

packets for a step-index fiber. The

comparison is encouraging.

[Contact: Robert L. Gallawa, (303)

497-3761]

Electro-Optic Metrology

Day, G.W., Hale, P.D., Deeter, M., Milner, T.E. , Conrad, D. , and Etzel, S.M.,

Limits to the Precision of ElectroOptic and Magneto-Optic Sensors, NBS

Technical Note 1307 (March 1987).

[Original title: High-Precision

Electro-Optic and Magneto-Optic Sensors

for Power System Applications: Technical Feasibility]

.

The principles of electro-optic and

magneto-optic sensors suitable for use

in power system applications are
Page 1 2 CEEE Technical Publication Announcements - December 87

Electro-Optic Metrology (cont'd.

reviewed with particular attention to

the properties of materials and components that limit the precision of such

sensors. Section topics include precision and accuracy in electro-optic and

magneto-optic sensors; electro-optic and

magneto-optic sensor configurations

suitable for current and voltage measurements; critical evaluation of

electro-optic sensor technology; critical evaluation of magneto-optic sensor

technology; and suggested approaches to

the development of high-precision optical current and voltage sensors. Data

on a number of materials are collected

and presented. For high-precision

electro-optic sensors, it is recommended

that crystals of the polar class having

point symmetry 43 m be used. For highprecision magneto-optic sensors, a lead

glass with a low stress-optic coefficient is recommended. Choices for

other components are also suggested.

For both types of sensors, a precision

of roughly ±1% over a 100°C temperature

range should be attainable. To achieve

a precision better than that, it will be

necessary to use temperature compensation techniques, several of which are

proposed and discussed.

[Contact: Gordon W . Day, (303)

497-5204]

Franzen, D.L. , Yamabayashi, Y. , and

Kanada, T . , Optical Sampling with

Gain-Switched* Pulse-Compressed Distributed-Feedback Laser Diodes, Electronics Letters, Vol. 23, No. 6, pp.

289-290 (March 1987).

Chirped pulses from gain-switched, distributed feedback laser diodes at a

wavelength of 1.3 ym are compressed to

8.7 ps full width at half maximum by the

linear dispersion properties of singlemode fiber. These pulses are used to

optically sample fast waveforms from

other 1.3-ym laser diodes. The high

time resolution sampling system uses a fibre coupler to combine beams; this

eliminates critical alignment and

results in a practical design.

[Contact: Douglas L. Franzen, (303)

497-3346 or -5342]

Young, M., and Weppner, M., Hybrid

Computer-Optical Processing With

Inexpensive Liquid Crystal

Television, Proceedings of the 1 986

International Optical Computing

Conference, Jerusalem, Israel, July

6-1 1, 1986, pp. 146-153 [SPIE - The

International Society for Optical

Engineering, P.0. Box 20, Bellingham,

WA 98227].

We describe a computer-optical

processing system that uses an

inexpensive liquid crystal television

monitor and a selective holographic

filter for coherent pattern recognition.

Specifically, we use a digital computer

to generate an edge-enhanced image of an

object, expose a Fourier transform

hologram of this image, and use the

hologram as a sort of matched filter for

recognizing the original object in real

time.

[Contact: Matt Young, (303) 497-3223 or

-5342]

Complex Testing

Leedy, T.F., A View of Metrology Support for ATE Systems, The Reflector,

Vol. 35, No. 9, p. 20 (May 1, 1987).

Several approaches are used to assure

that automatic test equipment (ATE)

performs properly. The traditional

approach is the calibration and adjustment of critical instruments contained

in the automatic test system by a calibration laboratory where the performance

of the instrumentation is evaluated and

any necessary adjustments are made.

However, the normal operating environment experienced by the equipment in the

ATE system may be quite different than

that encountered in the calibration

laboratory where such effects as elevated temperature and the presence of

high-frequency interfering signals (possibly produced by other instrumentation

and computers in the ATE system) may

degrade the performance of precision
CEEE Technical Publication Announcements - December 87 Page 1

3

Complex Testing (cont'd.)

measurement equipment. Thus, the user

of an ATE system, which has had instruments removed and calibrated in a laboratory, may have greater confidence in

the equipment performance than is warranted.

Another calibration approach employed

with ATE systems is the use of various

types of built-in test or self-testing

schemes. If properly implemented, such

schemes may be valuable towards assuring

that measurements made by an ATE system

are consistent. However, such techniques alone cannot perform a calibration function to determine the difference between values of physical quantities, such as voltage and frequency,

measured by the ATE system and those

measured quantities that have traceability to national standards. For successful calibration of a test system, a combination of traditional laboratory

calibration techniques and built-in test

techniques is usually desirable.

[Contact: Thomas F. Leedy, (301)

975-2410]

Other Fast Signal Topics

Sorrells, J.R., A Survey of Electronic

Measurement Needs Below 10 MHz, NBSIR

87-3549 (June 1987)

.

The results of a survey to assess the

electronic measurement needs from dc to

1 0 MHz are presented. The questionnaire

used in the survey covered three broad

areas, of measurement need: 1) basic

electrical quantities and related precision instruments, 2) automatic test

equipment and other complex measurement

systems, and 3) conducted electromagnetic interference. The data provided

by 527 respondents are summarized, and

the results of various analyses are

described. Several conclusions, suggested by the analyses, are also discussed.

[Contact: Barry A. Bell, (301)

975-2402]

Weppner, M., and Young, M., Image

Processing for Optical Engineering

Applications, NBSIR 87-3065 (April

1987)

.

This report describes the development

and testing of image processing software

designed for optical engineering applications. Image processing functions in

this software include two-dimensional

Fourier transforms, convolution, noise

reduction, multiple image resolutions,

and low-level image processing functions. The software also contains image

information display tools including

Gaussian beam and g-profile characterization for optical fiber measurements.

The necessary image file input/output

routines are presented in the software

and are used to read and store images in

conjunction with other image processing

software, digitizing cameras, and output

display devices.

[Contact: Matthew Weppner, (303)

497-3223]

ELECTRICAL SYSTEMS

Power Systems Metrology

Laug, O.B., A Precision Power Amplifier for Power/Energy Calibration

Applications, Proceedings of the

IEEE Instrumentation and Measurement

Technology Conference, IMTC/87, Boston,

Massachusetts, April 27-29, 1987, pp.

1 29-1 34.

A precision power amplifier for use in

power/energy calibration applications is

described. The amplifier was primarily

designed to boost the output amplitude

of a dual-channel digital generator to

provide the nominal 120 or 240 rms voltage component of a "phantom" calibration

power source. The amplifier has a fixed

gain of 40 and can provide a maximum

output voltage swing of 970 V peak-topeak or 340 V rms at 100 mA rms. The

bandwidth is from dc to 150 kHz, and at

60 Hz the observed no-load, short-term

amplitude and phase instabilities are i5

ppm and ±5 microradians, respectively.

The amplifier design uses high-voltage

N-channel MOSFETs in the output driver
Page 14 CEEE Technical Publication Announcements - December 87

(cont'de )

stage together with a unique circuit

topology of opto-isolators between the

low-level input stage and the high-level

output stage.

[Contact: Owen B. Laug, (301)

975-241 2]

Misakian, M., McKnight, R.H., and Fenimore, C . , Calibration of AspiratorType Ion Counters and Measurement of

Unipolar Charge Densities, Journal of

Applied Physics, Vol. 61, No. 4, pp.

1 276-1287 (February 15, 1987). [A more

extended treatment of this topic is

given in NBS Technical Note 1223 (May

1 986) . ]

The characterization of a parallel plate

apparatus which can produce a unipolar

charge density that is suitable for

calibrating aspirator-type ion counters

operating in the ground plane is described. Influences of a dc electric

field, air motion, Coulomb repulsion,

and diffusion on the transport of ions

into the ion counter are examined to

determine their effects on instrument

calibration and measurements in the

vicinity of high-voltage dc transmission

lines. A charge density which is known

with an uncertainty of less than ±9% is

used to check the performance of an ion

counter with and without a duct at its

entrance.

[Contact: Martin Misakian, (301)

975-2426]

Van Brunt, R.J., Common Parameterization^ of Electron Transport, Collision

Cross Section, and Dielectric Strength

Data for Binary Gas Mixtures, Journal

of Applied Physics, Vol. 61, No. 5, pp.

1773-1787 (March 1, 1987).

principal assumption that the electron

kinetic energy distributions in the gas

are Maxwellian. The method provides

physical insight into such behavior as

pressure-dependent or pressure-independent synergisms, and is useful in checking the consistency between dielectric

strength data and available information

on electron transport and ionization,

attachment, and momentum transfer collision cross sections. The method is

applied here to the mixtures SF^/Nj,

CC^2F2/N 2

/ and SFg/CC£2 F2

* [Contact: Richard J. Van Brunt, (301)

975-2425]

Superconductors

Goodrich, L.F., Bray, S.L., Dube, W.P.

Pittman, E.S., and Clark, A.F.,

Development of Standards for Superconductors, Interim Report, January - December 1985, NBSIR 87-3066 (April

1987) .

A cooperative program with the Department of Energy, the National Bureau of

Standards, and private industry is in

progress to develop standard measurement

practices for use in large-scale applications of superconductivity. The goal

is the adoption of voluntary standards

for the critical parameters and other

characterizations of practical superconductors. Progress for the period January through December 1985 is reported.

The major effort was the measurement of

large conductor critical current. Other

work reported here includes stability

and a discussion of possible future

Standard Reference Materials.

[Contact: Loren F. Goodrich, (303)

497-3143]

Magnetic Materials and Measurements

Previously used parame terizations of

dielectric strengths (electrical breakdown data) for gas mixtures in terms of

electron collision and transport parameters are reviewed. A new method of

fitting experimental data on dielectric

strengths for binary electronegative gas

mixtures is proposed based upon the

Goldfarb, R.B., and Bussey, H.E.,

Method for Measuring Complex Permeability at Radio Frequencies, Review

of Scientific Instruments, Vol. 58, No.

4, pp. 624-627 (April 1987).

An established method for measuring

complex rf magnetic permeability is
CEEE Technical Publication Announcements - December 87 Page 1

5

Magnetic Materials/ etc, (cont'd.

)

based on the change in inductance and

resistance of a coaxial transmission

line upon insertion of a sample toroid.

It is not necessary to wind coils on the

toroid or to correct for geometric demagnetization factors. The use of

modern commercial impedance analyzers,

as described in this paper, makes measurements from 1 kHz to 1 GHz particularly easy, fast, and accurate.

[Contact: Ronald B. Goldfarb, (303)

4 97-3650]

Moulder, J.C., and Capobianco, T.E.,

Detection and Sizing of Surface Flaws

With a SQUID-Based Eddy Current Probe,

Journal of Research of the National

Bureau of Standards, Vol. 92, No. 1,

pp. 27-33 ( January-February 1987).

In a new approach to eddy current detection and sizing of surface-breaking

flaws, we have coupled a conventional

reflection probe to a superconducting

quantum interference device (SQUID) to

produce an eddy current probe with

increased sensitivity and signal-tonoise ratio. The reflection probe consists of an air-core excitation coil

surrounding two counterwound ferritecore pickup coils connected in series.

A room- temperature probe is inductively

coupled to a SQUID, which operates in a liquid helium bath. The new probe was

used to obtain flaw signals from a number of electrical-discharge machined

(EDM) slots in aluminum alloy 6061.

Results indicated that by scanning the

probe along the length of the flaw, the

length could be determined from the

extent of the flaw signal. The peak

arrplitude of the flaw signal was found

to be proportional to the cross-sectional area of the flaw. Empirical calibration curves relating these quantities

were used to invert successfully the

experimental data obtained for the EDM

s lots

.

[Contact: Thomas E. Capobianco, (3 03)

497-31 41

J

ELECTROMAGNETIC INTERFERENCE

Radiated Electromagnetic Interference

Crawford, M.L., and Koepke, G.H., Preliminary Evaluation of Reverberation

Chamber Method for Pulsed RF Immunity

Testing, Proceedings of the IEEE

International Symposium on Electromagnetic Compatibility, San Diego, California, September 16-18, 1986, pp.

270-278.

This paper describes the evaluation of

the performance characteristics of a reverberation chamber excited by pulsed

rf (1.0 ps to 10 us, 0.001 duty cycle)

in the frequency range, 0.9 GHz to 10

GHz . The purpose of this work was to

investigate the potential use of a reverberation chamber for pulsed rf immunity testing of electronic equipment.

Information given includes a description

of the reverberation chamber evaluated,

the instrumentation used for performing

the measurements, and results obtained

showing the pulse dispersion characteristics of the chamber.

[Contact: Myron L. Crawford, (303)

497-5497]

Hill, D.A., An Error Bound for NearField Array Synthesis, IEEE Transactions on Electromagnetic Compatibility,

Vol. EMC- 28 , No. 4, pp. 273-276

(November 1986).

An expression for the upper bound of any

component of the electric or magnetic

field at any point in a region is derived in terms of a product of two surface field integrals. The result is

most useful for bounding errors in nearfield array synthesis, but might have

other applications where upper bounds on

field magnitudes are desired.

[Contact: David A. Hill, (303)

497-3472]

Hill, D.A., Radio-Wave Propagation

From a Forest to a Clearing, Electromagnetics, No. 6, pp. 217-228 (1986).

Kirchhoff integration over a vertical

aperture is used to obtain a simple

expression for radio-wave propagation
Page 1b CEEE Technical Publication Announcements - December 87

Radiated EMI (cont'd.

from a torest to a clearing. Numerical

results are presented for a frequency of

10 MHz, and the classical recovery effect is observed. Numerical comparisons

are made with a previous integral equation solution, and the agreement is

good.

[Contact: David A. Hill, (303)

497-3472]

Hill, D.A., and Koepke, G.H., A NearField Array of Yagi-Uda Antennas for

Electromagnetic Susceptibility Testing, IEEE Transactions on Electromagnetic Compatibility, Vol. EMC-28, No.

4, pp. 1 70-178 (November 1986) [condensed version of NBS Technical Note

1 082, July 1985].

In electromagnetic-susceptibility testing of electronic equipment, the ideal

incident field is a plane wave. To

approximate this condition, a sevenelement array of Yagi-Uda antennas has

been constructed and tested at a frequency of 500 MHz. The element weightings are determined by a near-field

synthesis technique, which optimizes the

uniformity of the field throughout a rectangular test volume in the near

field of the array. The amplitude and

phase of the electric field have been

measured throughout the test volume with

a short-dipole probe, and the agreement

with theory is excellent.

[Contact: David A. Hill, (303)

497-3472]

Kanda, M. , and Driver, L. , An Isotropic Electric-Field Probe With Tapered

Resistive Dipoles for Broadband Use,

100 kHz-18 GHz, IEEE Transactions on

Microwave Theory and Techniques, Vol.

MTT-35, No. 2, pp. 124-130 (February

1 987) [also appeared in the Proceedings

of the IEEE International Symposium on

Electromagnetic Compatibility, San

Diego, California, September 16-18,

1 986, pp. 256-261].

A new broadband electric-field probe,

capable of accurately characterizing and

quantifying electromagnetic (EM) fields,

has been developed at the National

Bureau of Standards. The probe's 8-TMm

resistively tapered dipole elements

allow measurement of electric fields

between 1 and 1 600 V/m from 1 MHz to 15

GHz, with a flatness of ±2 dB . The

mutually orthogonal dipole configuration

provides an overall standard deviation

in isotropic response, with respect to

angle, that is within ±0.3 dB. Both the

theoretical and developmental aspects of

this prototype electric-field probe are

discussed in this paper.

[Contact: Motohisa Kanda, (303)

497-5320]

Kanda, M., and Orr, R.D., Near-Field

Gain of a Horn and an Open-Ended Waveguide: Comparison Between Theory and

Experiment, Proceedings of the Fifth

International Conference on Electromagnetic Compatibility, University of

York, September 29-October 2, 1986

(sponsored by the Institution of Electronic and Radio Engineers, London,

England), pp. 1 37-145.

This paper gives the theory and supporting experimental measurements for the

near-field gain of a rectangular pyramidal horn and an open-ended waveguide

(OEG) at 450 MHz . The empirical nearfield gain for the OEG is derived from

experimental results obtained by a twoantenna method at about 2 GHz . The

theoretical near-field gain for the rectangular pyramidal horn is derived from

Schelkunof f' s formula. Two independent

near-field gain measurements of these

antennas are made using a three-antenna

method and a transfer-standard-probe

method. The discrepancy between theoretical and experimental results is

typically less than ±1 dB.

[Contact: Motohisa Kanda, (303)

497-5320]

Randa, J.P. , and Kanda, M., A Lattice

Approach to Complex Electromagnetic

Environments, Proceedings of the IEEE

International Symposium on Electromagnetic Compatibility, San Diego, California, September 16-18, 1986, pp.
CEEE Technical Publication Announcements - December 87 Page 1

7

Radiated EMI (cont'd.

)

329-331.

We outline an approach to the characterization of complicated electromagnetic

environments based on a lattice (finitedifference) approximation to Maxwell's

equations. Approximate solutions to the

equations are found numerically, subject

to constraints imposed by boundary conditions and by measurements of the field

at some number of points. The technique

is illustrated by simple two- and threedimensional examples.

[Contact: James P. Randa, (303)

497-31 50]

Reeve, G.R., Alternate EMI Measurement

Techniques for Microelectronic Circuits, Symposium Record, EMC EXPO 86

International Conference on Electromagnetic Compatibility, Washington, D.C.,

June 1 6-19, 1986, pp. T26.1-T26.4.

The purpose of this paper, which was

orginally presented as an unpublished

talk at a seminar held in March 1985 at

the National Bureau of Standards in

Gaithersburg, Maryland, is to suggest

some new possibilities in metrology for

evaluating the effects of electromagnetic interference on microelectronics

and integrated circuits in particular.

With increasingly complex integrated

circuits being designed for the VeryLarge-Scale Integrated Circuit (VLSI)

programs, and the Very High Speed Integrated Circuit (VHSIC) programs, utilizing larger chip areas and smaller

device geometries, there is some concern

that these units, either by themselves

or in application circuits will prove

more susceptible to the effects of

electromagnetic interference (EMI).

Existing techniques using pin voltage

upset measurements may not be sufficient

to properly characterize the behavior of

these integrated circuits in the presence of EMI. Some possible adaptations

of EMI measurement techniques presently

in use or being developed at the National Bureau of Standards and other laboratories are presented for consideration.

[Contact: George R. Reeve, (3 03)

497-3557]

Wilson, P.F., and Ma, M.T., Shielding

Effectiveness Measurements Using an

Apertured TEM Cell in a Reverberation

Chamber, Proceedings of the IEEE

International Symposium on Electromagnetic Compatibility, San Diego, California, September 16-18, 1986, pp.

265-269.

Measurements of near-field shielding

effectiveness are performed in a reverberation chamber using an apertured

transverse electromagnetic cell as the

receiver. This configuration allows one

to investigate the electric- and

magnetic-field shielding properties of a material simultaneously. Coupling to

the cell is modeled using small-aperture

theory, and predicted results agree well

with measured data.

[Contact: Perry F. Wilson, (303)

497-3842]

Conducted Electromagnetic Interference

Martzloff, F.D., and Gruzs, T.M.,

Power Quality Site Surveys Fact,

Fiction and Fallacies, Conference

Record, Industrial & Commercial Power

Systems Technical Conference, Nashville, Tennessee, May 4-7, 1987, pp.

21-33 [also to appear in IEEE Transactions on Industry Applications] •

The quality of the power supplied to

sensitive electronic equipment is an

important issue. Monitoring disturbances of the power supply has been the

objective of various site surveys, but

results often appear to be instrumentor site-dependent, making comparisons

difficult. After a review of the origins and types of disturbances, the

types of monitoring instruments are

described; a summary of nine published

surveys reported in the last 20 years is

presented. A close examination of

underlying assumptions allows meaningful

comparisons which can reconcile some of

the differences. Finally, the paper
Page 18 CEEE Technical Publication Announcements - December 87

Conduc ted EMI (cont'd.

makes an appeal for improved definitions

and applications in the use of monitoring instruments.

[Contact: Francois D. Martzloff, (301)

975-2409]

Reeve, G.R., Alternate EMI Measurement.

Techniques for Microelectronic Circuits, Symposium Record, EMC EXPO 86

International Conference on Electromagnetic Compatibility, Washington, D.C.,

June lb-19, 1986, pp. T2 6.1-T2 6.4.

The purpose of this paper, which was

orginally presented as an unpublished

talk at a seminar held in March 1985 at

the National Bureau of Standards in

Gaithersburg, Maryland, is to suggest

some new possibilities in metrology for

evaluating the effects of electromagnetic interference on microelectronics

and integrated circuits in particular.

With increasingly complex integrated

circuits being designed for the VeryLarge-Scale Integrated Circuit (VLSI)

programs, and the Very High Speed Integrated Circuit ( VHSIC ) programs, utilizing larger chip areas and smaller

device geometries, there is some concern

that these units, either by themselves

or in application circuits will prove

more susceptible to the effects of

electromagnetic interference (EMI).

Existing techniques using pin voltage

upset measurements may not be sufficient

to properly characterize the behavior of

these integrated circuits in the presence of EMI. Some possible adaptations

of EMI measurement techniques presently

in use or being developed at the National Bureau of Standards and other laboratories are presented tor consideration.

[Contact: George R. Reeve, (303)

497-3557]

ADDITIONAL INFORMATION

Lists of Publications

Gibson, K. A., Page, J.M., and Miller,

C.k.S., A Bibliography of the NBS

Electromagnetic Fields Division Publications, NBS IR 85-3040 (February

1 986)

This bibliography lists publications of

the National Bureau of Standards' Electromagnetic Fields Division for the

period from January 1984 through September 1985, with selected earlier publications from the Division's predecessor

organizations.

[Contact: Kathryn A. Gibson, (303)

497-31 32]

Kline, K.E., and DeWeese, M.E., Metrology for Electromagnetic Technology:

A Bibliography of NBS Publications,

NBSIR 86-3048 (June 1986).

This bibliography lists the publications

of the personnel of the Electromagnetic

Technology Division of NBS in the period

from January 1970 through December 1985.

A few earlier references that are directly related to the present work of

the Division are included.

[Contact: Kathryn E. Kline, (303)

497-3678]

Pa 11a, J.C., and Meiselman, B., Electrical and Electronic Metrology: A

Bibliography of NBS Electrosystems

Division Publications, NBS List of

Publications 94 (January 1987).

This bibliography covers publications of

the Electrosystems Division, Center for

Electronics and Electrical Engineering,

NBS, and of its predecessor sections for

the period January 1963 to January 1987.

A brief description of the Division's

technical program is given in the introduction.

[Contact: Jenny C. Pa 11a, (301)

975-2220]

Walters, E.J. , Semiconductor Measurement Technology: A Bibliography of NBS

Publications for the Years 1962-1986,

NBSIR 87-3522 (February 1987).

This bibliography contains reports of

work performed at the National Bureau of

Standards in the field of Semiconductor
CEEE Technical Publication Announcements - December 87 Page 1

9

Lists of Publications (cont'd.

)

Measurement Technology in the period

from 1862 through December 1986. An

index by topic area and a list of

authors are provided.

[Contact: E. Jane Walters, (301)

975-2050]

1988 CEEE CALENDAR

February 10-12 (San Diego, CA)

IEEE Semiconductor Thermal and Temperature Measurement Symposium. This

fourth annual SEMI-THERM symposium

is sponsored by the Components, Hybrids,

and Manufacturing Technology Society of

IEEE in cooperation with NBS and constitutes an international forum for the

presentation of new developments in, and

applications relating to, generation and

removal of heat within semiconductor

devices ana measurement of junction

temperatures experienced in various

applications and environments. Major

SEMI-THERM topic areas include thermal

measurements, thermal characterization,

applications, and computation and software.

The program includes keynote speakers,

technical presentations, tutorial sessions, workshops, and an exhibit. In

audition, the Semiconductor Equipment

and Materials Institute has scheduled in

conjunction with SEMI-THERM a meeting of

its Thermal Measurements Task Force, to

which attendees are invited. [Contact:

Frank F. Oettinger, (301) 975-2054]

May 11-13 (Los Angeles, CA)

Intersociety Conference on Thermal

Phenomena in Fabrication and Operation

of Electronic Components. This Conference is sponsored by the Components,

Hybrids, and Manufacturing Technology

Society of the IEEE, in cooperation with

ASME Committee K-1 6 on Heat Transfer and

NBS. It is intended to provide an

interdisciplinary forum for exploring

the progress made in understanding,

analyzing, and modeling thermal transport processes and thermally induced

failures in the fabrication, assembly,

and use of logic, memory, and datastorage systems. Major topic areas

covered are 1) processing and fabrication, including state-of-the-art semiconductor crystal growing techniques;

thermal stress in wafers, chips, substrates, PC boards, and joints; and

encapsulant behavior with respect to

solidification, outgassing, mechanical

properties, and water vapor diffusion

and absorption; 2) packaging technology,

including means for cooling components

from cryogenic to high temperatures and

reliability as affected by failure

mechanisms such as dopant migration and

intermetallic growth; and 3) peripheral

equipment, including data storage in

both magnetic and optical media and

thermal issues in dot-matrix and thermal

printer heads. The conference is being

held in conjunction with the Electronics

Components Conference (May 9-11) at the

same site. [Contact: Frank F. Oettinger, (301) 975-2054]

Planned

Early summer (Vail, CO)

Combined Short: Course on Optical Fiber

and Laser Measurements. [Contact:

Aaron A. Sanders, (303) 497-5341]

Early fall (Boulder, CO)

Fiber Optics Symposium. [Contact:

Aaron A. Sanders, (303) 497-5341]

Late fall (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers (20th Boulder Damage

Symposium). [Contact: Aaron A.

Sanders, (303) 497-5341]
Page 20 CEEE Technical Publication Announcements - December 87

CEEE SPONSORS

National Bureau of Standards

Department of Defense

Defense Nuclear Agency; Defense

Advanced Research Projects

Agency; National Security

Agency; Combined Army/Navy/Air

Force Calibration Coordination

Group

U.S. Air Force

Newark Air Force Station; Rome

Air Development; Space & Missile

Organization; Hanscom Air Force

Base; U.S. Air Force

Headquarters; Wr ight-Patterson

Air Force Base

U.S. Army

Aviation System Command; Fort

Belvoir; Fort Monmouth; Harry

Diamond Laboratory; Materials &

Mechanics Research; Redstone

Arsenal; Strategic Defense

Command

U.S. Navy

Naval Surface Weapons Center;

Naval Ocean Systems Center; Naval

Ordnance Systems Command; Naval

Air Test Center; Ordnance

Disposal Technology Center;

Weapons Support Center/Crane;

Office of Naval Research; Naval

Air Engineering Center

Department of Energy

Energy Systems Research; Fusion

Energy; High Energy & Nuclear

Physics; Bonneville Power

Administration

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Administration

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Department of Transportation

National Highway Traffic Safety

The Charles Stark Draper Laboratory

International Copper Research

As sociation

Massachusetts Institute of Technology

Sandia National Laboratories

University of California

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University of Wyoming
NBS-114A (REV. 2-80

U.S. DEPT. OF COMM.

BIBLIOGRAPHIC DATA

SHEET (See instructions)

4. TITLE AND SUBTITLE

PUBLICATION OR

REPORT NO.

NBSIR 87-3697

2. Performing Organ. Report No. 3. Publication Date

Depember 1987

Center for Electronics and Electrical Engineering Technical Publication Announcements

Covering Center Programs, April to June 1987, with 1988 CEEE Events Calendar

5. AUTHOR(S)

E. Jane Walters, compiler

6. PERFORMING ORGANIZATION (If joint or other than NBS. see instruction s) 7 . Contract/Grant No.

NATIONAL BUREAU OF STANDARDS

U.S. DEPARTMENT OF COMMERCE

GAITHERSBURG, MD 20899

8. Type of Report & Period Covered

April-June 1987

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City. State. ZIP)

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

10. SUPPLEMENTARY NOTES

All technical information included in this document has been previously approved for

publication.

| | Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11.

ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bibliography or literature survey, mention it here)

This is the thirteenth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. This issue of the Center for Electronics and Electrical

Engineering Technical Publication Announcements covers the second quarter of

calendar year 1987. Abstracts are provided by technical area for papers published

this quarter.

12. KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolon s) antennas; electrical engineering; electrical power; electromagnetic interference; o electronics; instrumentation; laser; magnetics; microwave; optical fibers; semiconductors; superconductors

13. AVAILABILITY 14. NO. OF

PRINTED PAGES

IxXUnlimited

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KEY CONTACTS:

Center Headquarters (720) Director, Mr. Judson C. French (301) 976-2220

Deputy Director, Mr. Robert I. Scace (301) 975-2220

Electrosystems Division (722) Chief, Dr. Otkare Petersons (301) 975-2400

Electromagnetic Fields Division (723) Chief, Dr. Ramon C. Baird (303) 497-3131

Electromagnetic Technology Division (724) Chief, Dr. Robert A. Kamper (303) 497-3535

Semiconductor Electronics Division (727) Chief, Mr. Frank F. Oettinger (301) 975-2054

INFORMATION:

For additional information on the Center for Electronics and Electrical Engineering, write or call:

Center for Electronics and Electrical Engineering

National Bureau of Standards

Metrology Building, Room B-358

Gaithersburg, MD 20899

Telephone (301) 975-2220