NBSIR 88-3713

Center for Electronics and

Electrical Engineering

Technical

Progress

Bulletin

Covering Center Programs,

July to September 1987,

with 1988 CEEE Events Calendar

February 1988

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899

Research Information Centey

National Enreau of Standards

Gaithersburg, Maryland 20899

87-3

Stimulating America s Progress 1913-1988
INTRODUCTION TO FEBRUARY 1988 ISSUE OF THE CEEE TECHNICAL PROGRESS BULLETIN

This is the twentieth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and Electrical Engineering. This issue of the CEEE Technical Progress Bulletin covers the

third quarter of calendar year 1987.

Organization of Bulletin ; This issue contains abstracts for all Center papers released for publication by NBS in the quarter and citations and abstracts for Center

papers published in the quarter. Entries are arranged by technical topic as identified in the table of contents and alphabetically by first author under each subheading within each topic. Unpublished papers appear under the subheading "Released for

Publication" . Papers published in the quarter appear under the subheading "Recently

Published". Following each abstract is the name and telephone number of the individual to contact for more information on the topic (usually the first author) . This

issue also includes a calendar of Center conferences and workshops planned for calendar year 1988 and a list of sponsors of the work.

Center for Electronics and Electrical Engineering ; Center programs provide national

reference standards, measurement methods, supporting theory and data, and traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U. S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the develojxnent of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor Technology Program, carried out by the Semiconductor Electronics Division in Gaithersburg, MD, and the Signals and Systems Metrology Program, carried out by the Electrosystems Division in Gaithersburg and the Electromagnetic Fields and Electromagnetic

Technology Divisions in Boulder, CO. Key contacts in the Center are given on the

back cover; readers are encouraged to contact any of these individuals for further

i nforraa tion. To request a subscription or for more information on the Bulletin , write to CEEE Technical Progress Bulletin, National Bureau of Standards, Metrology

Building, Room B-358, Gaithersburg, MD 20899 or call (301) 975-2220.

Center sponsors : The Center Programs are sponsored by the National Bureau of Standards and a number of other organizations, in both the Federal and private sectors;

these are identified on page 33.

Note on Publication Lists : Guides to earlier as well as recent work are the publication lists covering the work of each division. Ihese lists are revised and reissued

on an approximately annual basis and are available from the originating division.

The current set is identified in the Additional Information section, page 31 .
;EEE Technical Progress Bulletin - February 1988 Page 1

TABLE OF CONTENTS

INTRODUCTION inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM

Silicon Materials .... ..... 2

Analysis Techniques 2

Dimensional Metrology 2

Packaging 4

Integrated Circuit Test Structures . 4

Device Physics and Modeling 5

Radiation Effects 7

Insulators and Interfaces 8

Other Semiconductor Metrology Topics 8

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION ... 9

Waveform Metrology 9

Cryoelectronic Metrology 11

Antenna Metrology 13

Noise Metrology 15

Microwave and Mil lime ter-Wave Metrology 1 5

Optical Fiber Metrology 16

Electro-Optic Metrology .......... 17

Complex Testing 20

Other Fast Signal Topics 20

ELECTRICAL SYSTEMS 20

Power Systems Metrology 20

Superconductors 24

Magnetic Materials and Measurements . 27

ELECTROMAGNETIC INTERFERENCE 28

Radiated Electromagnetic Interference 28

Conducted Electromagnetic Interference 30

ADDITIONAL INFORMATION 31

1988 CEEE CALENDAR 3 2

SPONSOR LIST 3 3

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 2 CEEE Technical Progress Bulletin - February 198

8

SEMICONDUCTOR TECHNOLOGY

Silicon Materials

Released for Publication

Thurber, VJ.R., and Lowney, J.R., Methods for Accurate Determination of Emission Rate and Trap Concentration with

Application to Platinum-Doped Silicon, Journal of Applied Physics, Vol.

6 2, No, 2, pp. 534-540 (July 15,

1 987) .

A detailed analysis of junction capacitance was developed which allows one to

extract accurate values of emission rate

and trap concentration from isothermal

transient capacitance measurements.

Experiments were performed on silicon

diodes doped with platinum. The capacitance-ratio method of determining the

emission rate was used to remove the

nonexponentiali ty due to large trap

concentration from the capacitance

transients, Arrhenius plots of scaled

emission rate gave E/^ = 0,2271 ± 0.0002 eV for the platinum acceptor

level in n-type silicon, and E/^ = 0.3215 ± 0.0012 eV for the platinum

donor level in p-type silicon, A new

method for determining the trap concentration is derived and verified by use

of simulations and data. This method

involves the subtraction of capacitance

values obtained from two transients with

the same fill voltage, but different

reverse voltages. It is much simpler

than methods which require iterative

solutions of Poisson' s equation and a priori knowledge of the trap energy.

[Contact: W. Robert Thurber, (301)

975-2067

]

CEEf

1)1BS

has

opt

int

yea

A methodology is presented which was

used to examine the quality of a silicon

epitaxial layer based on its suitability

for use as a substrate for MOS devices.

Transistor and capacitor measurements

were used to derive the MOS characteristics of mobility, threshold voltage,

surface state density, effective generation lifetime, and doping concentration.

Basic material parameters may be

inferred from these data. This method-|o''

ology was used to characterize a sili-|o£

con-on-boron phosphide process having

0.2- and 0.4-ym BP films covered by 1-. to 5-jjm silicon epitaxial layer on which:

enhancement-mode PMOS devices were fab-l

ricated. Impurity concentrations on 1-’ and 2-jjm silicon layers were as high as

3 X 10^^ cm” 3 due to auto doping from

the BP layer. MOS transistors manufactured on these layers did not work properly. Device characteristics improved

on thicker silicon layers. The impurity

concentration was as low as 10^^ cm” ^ on the 5-|jm silicon layers. Surface state

densities were found to be as low as 5 x 10^^ states/cm2 with subthreshold currents as low as 10”^^ amperes. On all

wafers, the subthreshold slope varied

from 90 to 100 mV/dec with little variation due to silicon thickness. It was: shown that silicon layers thicker than 3'

jjm were necessary to fabricate working

devices due to high background doping

concentrations. Characteristics of: devices fabricated on 5-]jm silicon layers were comparable to those of devices

fabricated on bulk silicon processed at

the same time indicating high-quality

silicon growth.

[Contact: Gary P. Carver, (301)

975-2091

]

Dimensional Metrology

Analysis Techniques

Released for Publication

Robertson, P.J., Dumin, D.J., Carver,

G.P., and Novotny, D.B., Methodology

to Determine the Crystal Quality of

Thin Silicon Films Using MOS Device

Parameters

.

Recently Pi±)lished

Larrabee, R.D., Submicrometer Optical

Linewidth Metrology, Proceedings of ' the SPIE (The International Society foi l Optical Engineering, P.O. Box 20, ( Bellingham, WA 98227), Vol. 775, Integrated Circuit Metrology, Inspection, , and Process Control, pp. 46-50 (1987).
::eee Technical Progress Bulletin - February 1988

Dimensional Metrology (cont'd.)

[Conference, Santa Clara, California,

March 1-6, 1 987] .

.The National Bureau of Standards (NBS)

has had a continuing program to develop

(optical linewidth standards for the

;integrated circuit industry for over 10

-years. The past work has concentrated

ii'ion the development and the certification

-of photomask linewidth and pitch stanifdards. Ihe recent work is directed at

‘extending the feature sizes on these

|‘ standards to cover the range from 0.5 to

30 ym, and at doubling the certification

accuracy to 0.025 ym. Features with

heights larger than approximately 1/4

the wavelength of the illuminating light

cannot be modeled as zero- thickness

I layers as is done for photomasks. The

development of models to handle this

thick-layer case and to develop practical edge-detection criteria are currently under way at NBS. However, at the

present time, it is generally not possible to interpret the image profiles of

thick features and thereby measure an

accurate linewidth. The basic obstacles

that must be overcome to achieve accurate submicron feature size measurements

for these features are reviewed, and the

prospects for future NBS optical standards for features such as photoresist

lines on silicon wafers are assessed.

Some suggestions about what to do until

these standards become available are

given.

[Contact: Robert D. Larrabee, (301)

975-2298]

Nyyssonen, D. , Metrology In Microlithography, in VLSI Electronics Microstructure Science, Microlithography for

VLSI, N. G. Einspruch, ed. , Chapter 7,

Vol. 16, pp. 265-317 (Academic Press,

1 987) .

The advent of very-large-scale and veryhigh-speed integrated-circuit technologies has had enormous impact on the

requirements for accuracy and precision

of dimensional metrology. Accurate and

precise measurements are needed to imPage 3

prove yield, to ensure that lithographic

and critical dimension measurement systems meet specifications, to establish

control of fabrication processes, and to

relate measurements to theory or to

serve as input data to modeling or simulation programs. The push to micrometer

and submicrometer feature sizes on

larger and larger wafers requires dimensional measurement systems with

precision and accuracy which can take up

only a small fraction of the error budget of 10% or less allowed in process

control. By the gauge maker' s rule, the

measurement system tolerance must be

three to ten times less than the tolerance on the part being manufactured.

This book chapter discusses some of the

unique requirements which metrology

places on optical and scanning electron

microscope measurement systems and provides a framework for realistically

evaluating the capabilities of a given

dimensional-measuring system in the

context of the purpose for which the

measurement system is to be used.

[Contact: Robert D. Larrabee, (301)

975-2298]

Nyyssonen, D. , and Larrabee, R.D.,

Submicrometer Linewidth Metrology in

the Optical Microscope, NBS Journal

of Research, Vol. 92, No. 3, pp. 187-

204 (May-June 1987).

The recent impetus of the semiconductor

industry toward submicron feature sizes

on integrated circuits has generated an

immediate need for measurement tools and

standards suitable for these features.

Optical techniques have the advantages

of being nondestructive and of having

high throughput, but the disadvantage of

using wavelengths comparable to feature

size, which results in complex scattered

fields and image structures that are

difficult to interpret. Although submicron optical linewidth measurement is

possible for 0.3-ym feature sizes, current instrumentation and linewidth standards, particularly for wafers, will

have to improve radically in accuracy,

as well as in precision, to meet the

anticipated needs of the IC industry for
Page 4 CEEE Technical Progress Bulletin - February 198 8 I Dimensional Metrology (cont'd.)

submicron dimensional metrology. This

paper discusses the effects of inadequate precision and accuracy'‘bn process

control in IC fabrication and suggests

some ways of circumventing these limitations until better instrumentation and

standards become available.

[Contact: Robert D. Larrabee, (301)

975-2298]

Postek, M.T., Submicrometer Dimensional Metrology in the Scanning Electron

Microscope, Proceedings of the SPIE

(The International Society for Optical

Engineering, p.o. Box 20, Bellingham,

WA 98227) , Vol. 775, Integrated Circuit Metrology, Inspection, and Process

Control, pp. 166-171 (1987). [Conference, Santa Clara, California, March

1 -6, 1987]

.

The National Bureau of Standards has

initiated a program to develop scanning

electron microscope linewidth measurement standards for the integratedcircuit community. This program involves the development of: a scanning

electron microscope-based linewidth

measurement and standard reference material certification instrument, the

necessary electron beam/sample interaction modeling, and the appropriate

micrometer and submicrometer artifacts.

The basic problems that must be overcome

to achieve accurate submicrometer feature size measurements in the scanning

electron microscope for these artifacts

are reviewed and some suggestions are

given of what can be done to "bridgethe-gap" until such standards become

available.

[Contact: Michael T. Postek, (301)

975-2299]

Packaging

Recently Published

Kane, D. , Moore, B.A., and Walters,

E . J . , RADC/NBS International Workshop

on Moisture Measurement and Control for

Microelectronics (IV), NBSIR 87-3588

( June 1987). I

This fourth Workshop on Moisture Mea- ' surement and Control for Microelectron- ' ics served as a forum on moisture and/or'i

materials reliability problems and on

ways to control them or measure their

extent. Twenty-two presentations are

included which contain detailed informa- i tion on hermeticity measurement and

j

definition; development of standard ^ packages for mass spectrome trie calibraI

tions; moisture interaction with various

materials; and techniques that can bej

used to measure moisture in microelectronic packages. It was clear fromjj

several presentations in this workshop

i

that a very systematic approach is!

needed when organic materials are;

involved; all the variables must be

identified and studied one at a time. !ii This is the key to lot-to-lot reproducibility, materials selection, and control; hence a better reliability at the

design phase will decrease the need for

testing, hence the cost, thus resulting

in a greater satisfaction to the cus- | tomer. j [Contact: E. Jane Walters, (301)

975-2050] ^

Integrated Circuit Test Structures

Recently Published

Cresswell, M.W., Pessell, N. , Betsch, i R.J., Linholm, L.W., and Radack, D. J.

,

Sub-Micron Lithography Characterization

Using an Expert System, Proceedings

i

of the SPIE (The International Society

for Optical Engineering, P.O. Box 20,

!

Bellingham, WA 98227) , Vol. 775, Integrated Circuit Metrology, Inspection,

and Process Control, pp. 304-311

(1987). [Conference, Santa Clara,

California, March 1-6, 1987].

This paper describes a test chip, test

results, rule-generation techniques, and || an expert system for characterizing the

performance of a sub-micron lithography

process. Examples of test results, data

reduction techniques, and expert system:

output are given. The objective of this!

1
CEEE Technical Progress Bulletin - February 1988 Page 5

IC Test Structures (cont'd.)

work is to develop a system for automatic process diagnosis.

[Contact: Loren W. Linholm, (301)

975-2052]

Radack, D.J., and Linholm, L.W., OnChip propagation Delay Measorement,

Proceedings of the IEEE 1987 Custom

Integrated Circuits Conference, Portland, Oregon, May 4-7, 1987, pp. 579-

581 .

The accurate measurement of gate propagation delay is needed for increasing

the accuracy of simulators and for comparing device designs and evaluating

fabrication technologies. A digital

circuit is presented which can be used

to determine propagation delay of any

unclocked circuit element. Ihe circuit

contains on-chip logic which allows

propagation delay measurement using a low-frequency parametric test system.

[Contact: Loren W. Linholm, (301)

975-2052]

Radack, D.J. , Swartz, T.C., Linholm,

L.W., and Cres swell, M.W., A Comprehensive Test Chip for the Characterization of Multi-Level Interconnect Processes, Proceedings of the 1987 IEEE

VLSI Multilevel Interconnect Conference, Santa Clara, California, June

14-17, 1987, pp. 238-244 (1987).

A test chip for the evaluation and characterization of multi-level interconnect

processes has been developed. The test

chip contains test structures which

allow a process engineer to make comparative, quantitative measurements for

evaluating the performance of selected

processes and equipment. This paper

describes the design and testing of

selected test structures and presents

initial test results.

[Contact: Loren W. Linholm, (301)

975-2052]

Schafft, H.A., Thermal Analysis of

Electromigration Test Structures,

IEEE Transactions on Electron Devices,

Vol. ED-34, No. 3, pp. 664-672 (March

1 987)

.

A thermal analysis of a straight-line

resistor test structure is used to show

how test structure design and test conditions can affect the accuracy of electromigration characterizations of metallizations. Recommendations for the

design and use of electromigration test

structures are given.

[Contact: Harry A. Schafft, (301)

975-2234]

Schafft, H.A., Staton, T. , Mandel, J. , and Shott, J. , Reproducibility of

Electromigration Measurements, IEEE

Transactions on Electron Devices, Vol.

ED-34, No. 3, pp. 673-681 (March

1987)

.

The reproducibility of median- time-tofailure (^^g) measurements was determined in an inter laboratory experiment

in which 1 1 laboratories and a reference

laboratory took part. Each laboratory

used a method of its choosing to test

equivalent samples under the same conditions of current density and oven temperature. The between-laboratory reproducibility of t^

g measurements normalized to one metallization temperature

was dependent on current-density stress:

at 1.0 MA/cm2 it was within 15%, while

at 2.5 MA/cm2 it was generally within

50%. Ihe primary source for variability

is in estimating the temperature rise of

the test metallization due to joule

heating. Recommendations are given for

the design and test of electromigration

test structures to improve the reproducibility of t^

g measurements.

[Contact: Harry A. Schafft, (301)

975-2234]

Device Physics and Modeling

Recently Published

Albers, J. , Semiconductor Measurement

Technology: Results of the Monte Carlo

Calculation of One- and Two-Dimensional

Distributions of Particles and Damage:

Ion Implanted Dopants in Silicon, NBS
Page 6 CEEE Technical Progress Bulletin - February 1988 £

Device Physics and Modeling (cont'd.)

Special Publication 400-79 (September

1 987)

.

The TRansport of Ions in Matter (TRIM)

Monte Carlo code was used to calculate

the two-dimensional distributions of

particles, primary damage, and electronic and nuclear energy loss for implantation of a line beam source into silicon

targets. Approximate two-dimensional

distributions of the Frenkel pairs

(vacancy-interstitial) created by the

primary displacement damage of the target atoms were calculated by means of

the Kinchin-Pease equation. These particle, damage, and energy loss distributions allowed for the calculation of the

one-dimensional distributions of these

quantities for implantation into unmasked targets. A superposition technique was used to construct the twodimensional particle and approximate

Frenkel pairs distributions for implantation past a mask edge. The energetic

ions used in the calculations were in

two groups: those used as intentional

dopants in silicon device fabrication

and those which either limited lifetime

or acted as gettering sites. The particle distributions were parameterized by

means of standard polynomial fitting

techniques

.

[Contact: John Albers, (301) 975-2075]

Bennett, H.S., Fundamental Principles

for Gallium Arsenide Devices , Proceedings of the International Symposium

on Circuits and Systems, Philadelphia,

Pennsylvania, May 4-7, 1987, pp. 12-14

( 1 987)

.

Recent advances in physics for submicrometer silicon devices suggest lessons or

principles that are valid when numerically simulating the behavior of GaAs

devices. These lessons from physics for

silicon devices are summarized and their

implications for GaAs devices are

given.

[Contact: Herbert S. Bennett, (301)

975-2079]

Submicron Device

Physics for Numerical Simulations,

Proceedings of the SPIE (International

Society of Optical Engineering, P.O.

Box 10, Bellingham, WA 98227-0010),

Vol. 763, Physics of Amorphous Semiconductor Devices, pp. 134-140 (1987).

[Conference, Los Angeles, California,

January 15-17, 1987]

r

f

‘ t

c

0

il

i5

: ( Recent advances in physics for submicron, bipolar-crystalline devices suggest principles that are valid when

modeling bipolar devices with noncrystalline regions such as those with polysilicon, polycrystalline silicon, and

hydrogenated amorphous silicon emitters.

These principles from crystalline device

physics are summarized, and their implications for the noncrystalline regions

of bipolar devices are given.

[Contact: Herbert S. Bennett, (301)

975-2079

]

Bennett, H.S., and Lowney, J.R., Models for Heavy Doping Effects in Gallium

Arsenide, Journal of Applied Physics,

Vol. 62, No. 2, pp. 521-527 (July 15,

1 987)

.

Knowledge of the parameters thatl

describe how the band edges, densities

of states, and the effective intrinsic

carrier concentrations vary with dopant;

and carrier densities are essential for

reliable predictions from numerical

simulations of GaAs/AlGaAs devices and'

for interpreting optical measurements.

Klauder' s self-energy method, which is

self-consistent, is used to calculate

the effects due to the interactions

between carriers and dopant ions in GaAs

;

at 300 K. The many-body effects due to.

the interactions among the carriers

themselves, exchange, and correlation

are estimated by evaluating expressions

similar to those of Abram et al. at 300

K. When densities exceed about 5 x 10^^;

cm~ ^ in n-type GaAs and 10^® cm”® in

p-type GaAs, carrier-dopant ion interactions and carrier-carrier interactions

become significant and should be included in calculations of hand structure

changes and of properties which depend

Bennett H . S • f on the density of states such as carrier
(CEEE Technical Progress Bulletin - February 1988 Page 7

I Device Physics and Modeling (cont'd.)

transport, effective intrinsic carrier

concentrations, and coefficients for

optical absorption.

[Contact: Herbert S. Bennett, (301)

97b-2079]

Gaitan, M., and Mayergoyz, I.D., Time

Perturbation Analysis for the MOS System, in Fundamental Research on the

Numerical Modelling of Semiconductor

Devices and Processes, J.J.H. Miller,

Ed,, pp. 77-83 (Boole, Ireland, 1987)

[Proceedings of the First International

Workshop on the Numerical Modelling of

Semiconductors, Los Angeles, California, December 11-12, 1986]. [Paper

also appeared in COMPEL, Vol. 6, No.

22, pp. 77-83 (1987) .]

The development of a numerical implementation of the small-signal response of

MOS (metal oxide-semiconductor) capacitors, using time perturbation analysis

is discussed. The effects of nonconstant doping profiles and interface and

bulk traps are included. The model uses

Fermi-Dirac statistics to describe the

occupancy of the interface and bulk

traps. The oxide region is considered

to have no mobile carriers, and any

fixed oxide charge distribution is

modeled as a charge sheet at the Si-Si 02

interface. This technique can be used

to find the small signal response of a device from the static solution.

[Contact: Michael Gaitan, (301)

975-2070]

Hefner, A.R., and Blackburn, D.L. , A

Performance Trade-Off for the Insulated

Gate Bipolar Trainsistor: Buffer Layer

Versus Base Lifetime Reduction, IEEE

Transactions on Power Electronics, Vol.

PE-2, No. 3, 194-207 (1987). [identical paper appeared in PESC '86, Proceedings of the 17th Annual IEEE Power

Electronics Specialists Conference, pp.

27-38 (1 986) .]

A one-dimensional analytic model for the

insulated gate bipolar transistor

( IGBT) , which includes a high-doped

buffer layer in the low-doped bipolar

transistor base, is developed. The

model is used to perform a theoretical

trade-off study between IGBTs with and

without the buffer layer. The study is

performed for devices of equal breakdown

voltages, and the critical parameters

chosen to "trade-off" are turn-off

switching energy loss (related to turnoff time) and on-state voltage, both at

a given current. In this model, as in

reality, the two critical parameters are

varied by 1) adjusting the doping concentration and thickness of a buffer

layer included as part of the bipolar

transistor base, 2) adjusting the lifetime in the lowly doped bipolar transistor base with no buffer layer included,

or by 3) a combination of 1) and 2) . The results of the model predict that

for equal breakdown voltages an optimized device with a buffer layer has

less switching energy loss for a given

on-state voltage than an optimized

device with no buffer layer.

[Contact: Allen R. Hefner, (301)

975-2071

]

Lowney, J.R., and Bennett, H.S., Limitations of Isotropic Theory of Band-Gap

Narrowing in Si and GaAs Devices,

Proceedings of the 1987 IEEE Bipolar

Circuits and Technology Meeting, Minneapolis, Minnesota, September 21-22,

1 987, pp. 1 57-1 59 ( 1 987)

.

The theory of band-gap narrowing based

on uniform material is shown to be invalid for devices with very large doping

gradients. Calculations also show that

enhanced narrowing results from the

built-in field.

[Contact: Jeremiah R. Lowney, (301)

975-2048]

Radiation Effects

Released for Publication

Singh, G. , Galloway, K.F., and Russell,

T . J , , Temperature Induced Rebound in

Power MOSFETs.

Enhancement mode n-channel power MOSFETs
Page 8 CEEE Technical Progress Bulletin - February 1988

'

Radiation Effects (cont'd.)

were investigated for rebound. They

received 300 krad{ Si ) gamma dose under

positive gate bias with source and drain

grounded. The irradiated transistors

were thermally annealed with all terminals shorted or under positive gate bias

with drain and source shorted, at temperatures from 60°C to 150°C, Threshold

voltage rebound was observed for some

transistor types under certain experimental conditions,

[Contact: Thomas J, Russell, (301)

975-2073]

Suehle, J,S,, Russell, T,J, , and Galloway, K,F,, Interface Trap Effects on

the Hot-Carrier-Induced Degradation of

MOSFETs During Dynamic Stress,

Foundry and hardened n-channel MOSFETs

were stressed with dynamic AC pulses and

with static DC voltages. The pre-radiation hot-carrier-induced degradation is

much more severe in the dynamic case

than in the static case for the hardened

devices. The data suggest that the

pre-radiation hot-carrier degradation is

strongly influenced by the relative

density of interface traps and by the

pulse structure. The post-radiation

hot-carrier degradation is mainly influenced by the amount of radiation-induced

fixed oxide charge,

[Contact: John S, Suehle, (301)

975-2247]

Insulators and Interfaces

Recently Published

Carver, G,P,, Novotny, D,B,, and Kopanski, J,J,, An Innovative Measurement

of Specific Contact Resistivity Confirms Lower Aluminum-Silicon Contact

Resistance, Proceedings of the 1987

IEEE VLSI Multilevel Interconnect Conference, Santa Clara, California, June

14-17, 1987, pp, 337-343 (1987),

New accurate data prove that the value

of the aluminum- silicon specific contact

resistivity is much smaller than the

value determined previously by two-level

planar contact resistor structures. The'

new data were obtained using an innovaJ

tive method based upon small, geometric- 1

ally well-defined contacts, for which 1 the silicon spreading resistance can be

calculated self -consistently , In this)

method, the total series resistance is ! measured at a contact window in an oxide!

layer to a silicon wafer. Unlike two- |3

level planar structures, lateral and!

vertical current crowding effects in the

i

metal layer are measured separately and

are not involved directly in modeling

the contact resistance. Using this new

method, values of the specific contact

resistivity between an aluminum alloy

containing 1,5% silicon and silicon;

wafers were measured for p-type silicon

resistivities in the range from 0,006 to

25 ohm-cm and for n-type silicon resistivities in the range from 0,0014 to

j 0,0026 ohm-cm. The specific contact

|

resistivity values we obtained are about

five times smaller than values reported!

from two-level planar structures, suggesting that aluminum may be useful for

contact dimensions as small as 0,5 ym on

a side. With the new results, multilevel conductor systems can be designed

for optimal performance,

[Contact: Gary P, Carver, (301)

975-2091

]

Other Semiconductor Metrology Topics

Released for Publication

Novotny, D,B,, Bnission Spectra of

Diazide Photoresist Initiator and Expoi

sure Reciprocity,

The emission spectra of an initiator ! typical of those used in negative photo- < resists, namely, 2,6 bis-(p-azidobensilidene) -4-e thylcyc lohexanone, were investigated, It is shown that the assumption that the large absorption band in

negative photoresist is due to a single

transition state is not valid. It is

composed of narrow states which, in

turn, implies that reciprocity failure

and loss of sensitivity would occur at

lower intensities than predicted. It is

|
CEEE Technical Progress Bulletin - February 1988 Page 9

. Other Semiconductor Topics (cont'd.)

concluded that rapid quenching from the

i excited states is occurring.

[Contact; Donald B. Novotny, (301)

975-2699]

Recently Published

Bouldin, C.E., Forman, R.A., Bell, M.I.,

Donovan, E.P., and Hubler, G.K.,

EXAFS Measurements of Ion and Implanted

Amorphous Surface Layers, Proceedings

of the SPIE (International Society of

Optical Engineering, P.O. Box 10,

Bellingham, WA 98227-0010), Vol, 690,

Optoelectronic Applied Sciences and

Engineering, pp. 45-51 (1986). [Conference, San Diego, California, August

1 7, 1986]

EXAFS measurements of ion-damaged amorphous Ge (a-Ge) show that low-temperature annealing causes a structural

relaxation in the as-implanted a-Ge. It

is found that there is a sharpening of

the first shell in the radial distribution but no change occurs in the firstshell distance or coordination number.

No higher shells in the radial distribution are observed either before or after

annealing, indicating that these shells

remain highly disordered. The observed

structural relaxation is an amorphousamorphous transition; no nucleation of

microcrystals takes place. EXAFS measurements are made using conversion

electron detection (CEEXAFS) , which is

essentially total electron yield detection in ambient conditions, allowing the

EXAFS measurements to be near-surface

sensitive with a sampling depth of 600

to 800 A.

[Contact; Charles E. Bouldin, (301)

975-2946]

Zaghloul, M.E., An Overview of Testability Measures in the Design of Digital Integrated Circuits, Semi custom

Design Guide, pp. 98-108 (1987).

This paper is an overview of testability

measures in the design of digital integrated circuits. Commercial testability

algorithms are described and compared.

Recent developments on testability measures which enhance the role of testability are discussed.

[Contact; Loren W. Linholm, (301) 975-

2052]

FAST SIGNAL ACQUISITION, PROCESSING,

AND TRANSMISSION

Waveform Metrology

Released for Publication

Turgel, R.S., Phase Meter Calibration

at NBS.

To provide a phase meter calibration

service, a phase angle calibration standard has been developed at NBS. This

standard is a signal generator with two

sinusoidal outputs and uses direct digital synthesis to generate the signals.

The phase angle between the two sinusoids is determined by the input parameters in the calculation of the sets of

digital values from which the analog

output is synthesized. An auto-zero

compensation mode corrects for residual

phase differences in the two output

channels. The phase resolution is better than 0.002 deg over a frequency

range from 2 Hz to 5 kHz and 0.005 deg

from 5 kHz to 50 kHz.

Phase meter calibration data are fitted

to a linear model from which appropriate

corrections for the phase meter readings

can be derived. Statistical treatment

of the data provides an estimate of the

uncertainty of the corrected phase meter

readings relative to the phase angle

calibration standard.

[Contact; Raymond S. Turgel, (301)

975-2420]

Recently Published

Bell, B.A., A Report on the NBS/CEEE

Survey of Electronic Measurement Needs

Below 10 MHz, Proceedings of the

National Conference of Standards Laboratories, 1987 Workshop and Symposium,

Denver, Colorado, July 12-16, 1987, pp.
Page 1

0

CEEE Technical Progress Bulletin

Waveform Metrology (cont'd.)

75-1 - 75-14.

This paper describes the results of a recent survey conducted by the Electrosystems Division of the Center for Electronics and Electrical Engineering

(CEEE) at the National Bureau of Standards (NBS) . A summary analysis is

provided of the data obtained on questions concerning (1) critical electrical

quantities and associated instrumentation and devices, (2) automatic test

equipment ( ATE ) /c ompl ex measurement

systems, and (3) conducted electromagnetic interference.

[Contact: Barry A. Bell, (301)

975-2402]

Lawton, R.A., and Meyer, K. , Waveform

Standards for Electrooptics: A Pulse

Duration Comparison, IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-35, No. 4, pp. 450-453

( April 1 987)

.

A transfer standard has been developed

for use in comparing the measurement

capability of the Automatic Pulse Measurement System (APMS) at the National

Bureau of Standards to that of recently

developed electrooptic samplers. This

transfer standard is a comb generator

driven by a 90-MHz sine wave. Using

this standard, measurements were made of

the pulse waveform of a comb generator

output with both the APMS and an electro-optic sampler. A comparison was

then made of the pulse duration (full

width at half maximum) obtained in the

two waveform measurements. The result

was a duration of 102 ps as measured by

the APMS and 112 ps as measured by the

electro-optic sampler. The signal- tonoise ratio at the comb generator input

was improved over that of previous measurements, and a correction for pulse

broadening was made to achieve this

result. Ihe pulse broadening was caused

by the impedance mismatch between the

sampler and the transmission system (50

i2) . [Contact: Robert A. Lawton, (303)

497-3339]

- February 1988 |iC

Oldham, N.M., AC Voltage and Current i|j Measurements, MAPAN, Journal of

Metrology Society of India, Vol. 1, No.jO

3, pp. 17-18 (1986) . Definitions and various measurementi

techniques for the measurement of ac|

voltage and current are given. 1 [Contact: N. Michael Oldham, (301) I 975-2408]

Oldham, N.M., Laug, O.B., and Waltrip, | B.C., Digitally-Synthesized PowerJ

Calibration Source, IEEE Transactions!

on Instrumentation and Measurement,

Vol. IM-36, No. 2, pp. 341-346 (June'

1987) [CPEM 86 Proceedings issue]

.

A digitally synthesized source of "phantom" power for calibrating electrical;

power and energy meters is described.

,

Independent sources of voltage, current,

and phase angle are programmable between

0 and 240 V, 0 and 5 A, and 0 and 360;

deg, respectively. The accuracy of the'

active and reactive power is estimated

to be within ±100 ppm of the full scale

j

apparent power (volt-amperes)

.

[Contact: N. Michael Oldham, (301)

975-2408]

Oldham, N.M., and Parker, M.E., NBS

Calibration System for AC Voltage,

Proceedings of the 1987 National Conference of Standards Laboratories, 1987'

Workshop and Symposium, Denver, Colorado, July 12-16, 1987, pp. 47-1 -j

47-6.

An automatic system for calibrating high

accuracy ac voltmeters and calibrators;

is described. The system relies on!

measurements using coaxial thermal volt-

,

age converters to achieve ac-voltage

;

uncertainties of 5 to 150 ppm from 0.01-

600 volts over the frequency range of 10

Hz to 1 MHz . Specialized hardware and

measurement techniques make it possible

to achieve these uncertainties in test

periods of approximately one minute.

Random errors introduced by the system

are typically less than 2 ppm (one standard deviation) . [Contact: N. Michael Oldham, (301)

975-2408]
j CEEE Technical Progress Bulletin - February 1988 Page 1

1

Waveform Metrology (cont'd.)

Oldham, N.M., Parker, M.E., Young, A.,

and Smith, A.G., A High Accuracy, 10

Hz - 1 MHz Autcsnatic AC Voltage Calibration System, Proceedings of the

IEEE Instrumentation and Measurement

Technology Conference, Boston, Massachusetts, April 27-29, 1987, pp. 279-

281 (April 1 987) .

An automatic system for calibrating

high-accuracy ac voltmeters and calibrators is described. The system is based

on traditional coaxial thermal voltage

converters to provide measurement uncertainties of 5 to 20 ppm in the audio

frequency range and 5 to 150 ppnn over

the full range from 1 0 Hz to 1 MHz.

Specialized hardware and measurement

techniques make it possible to achieve

these uncertainties in test periods of

approximately one minute. Random errors

introduced by the system are typically

less than 2 ppn (one standard deviation) . [Contact; N. Michael Oldham, (301)

975-2408]

Schoenwetter, H.K., Design and Characterization of a Programmable Step Generator with Very Fast Settling Performance, IEEE Transactions on Instrumentation and Measurement, Vol. IM-36,

No. 2, pp. 428-432 (June 1987) [CPEM 86

Proceedings issue]

.

A pulse generator for testing the step

response of waveform recorders is described. The initial and final levels

of voltage steps are each programmable

within the range of ±1 V for a 50-i^

termination. Voltage steps within this

range settle to within ±0.2 and ±0.1

percent of full-scale range in approximately 4 and 6 ns, respectively. The

1 0-90 percent transition duration is

approximately 1.7 ns. [Contact: Howard K. Schoenwetter, (301)

975-2414]

Souders, T.M., and Flach, D.R., Accurate Frequency Response Determinations

from Discrete Step-Response Data,

IEEE Transactions on Instrumentation

and Measurement, Vol. IM-36, No. 2, pp.

433-439 (June 1987) [CPEM 86 Proceedings issue]

.

An approach is presented for quickly

obtaining the complex frequency response

of a system from sampled step-response

data. Digital signal processing techniques are used extensively. An analysis of errors resulting from sampling,

quantization, first differencing, and

record length is included.

[Contact: T. Michael Souders, (301)

975-2406]

Cryoelec tronic Metrology

Released for Publication

Kautz , R.L., and Lloyd, F.L., Precision of Series-Array Josephson Voltage Standards

.

Comparison of two series-array Josephson

voltage standards operated at over 1 V

shows that they differ in voltage by

less than two parts in 10^^.

[Contact; Richard L. Kautz, (303)

497-3391 or -3988]

McGrath, W.R., Richards, P.L., Face,

D.W., Prober, D.E., and Lloyd, F.L.,

Accurate Experimental and Theoretical

Comparisons Between SIS Mixers Showing

Weak and Strong Quantum Effects.

We have made a systematic study of the

gain and noise in superconductor-insulator-superconductor (SIS) mixers

employing a Ta-based, Nb-based and Pballoy-based tunnel junctions. These

junctions displayed both weak and strong

quantum effects at a signal frequency of

3 3 GHz. The effects of energy gap

sharpness and sub-gap current were

investigated and are quantitatively

related to mixer performance. Detailed

comparisons are made of the mixing

results with the predictions of the

Tucker theory. We have measured mixer

performance with a novel test apparatus

which is accurate enough to allow for

the first detailed tests of theoretical
Page 1

2

CEEE Technical Progress Bulletin - February 1988 c:

Cr yoelectronic Metrology (cont'd.)

noise predictions. We find that the

Tucker theory underestimates the mixer

noise temperature by a factor of about 2

for all of our mixers. In addition,

predicted values of available mixer gain

are in reasonable agreement with experiment when quantum effects are weak.

However, as quantum effects become

strong, the predicted gain diverges to

infinity which is in sharp contrast to

the experimental results. Predictions

of coupled gain do not always show such

divergences.

[Contact: Frances L. Lloyd, (303)

497-3254 or -3988]

Zimmerman, J.E., Beall, J.A., Cromar,

M.W., and Ono, R.H., Equivalent Flux

Noise in a YBa-Cu^Ox rf SQUID, to

be published in the Proceedings of the

1 8th International Conference on Low

Temperature Physics, Kyoto, Japan,

August 20-26, 1987.

We have measured the noise in fluxlocked radiofrequency SQUIDs made of

bulk YBa^Cu^Oj^ both -in a He-cooled

cryostat and in liquid nitrogen (LN^).

Our best results at 75 K show a spectral

density of the equivalent flux noise

equal to 4.5 s 10“'+ There is

considerable variation in the performance of SQUIDs made from nominally

similar material.

[Contact: James E. Zimmerman, (303)

497-5102]

Recently Published

Hamilton, C.A., Kautz, R.L. , Lloyd,

F.L., Steiner, R.L., and Field, B.F,,

The NBS Josephson Array voltage Standard, IEEE Transactions on Instrumentation and Measurement, Vol, IM-36, No,

2, pp, 258-261 (June 1987).

A Josephson voltage standard based on a series array of 2076 junctions is described, When irradiated with a 1 5-mW

signal at a frequency of 96 GHz, the

array produces 15,000 quantized levels

between -1.5 and 1,5 V, Initial results

on high-precision comparisons with a c Zener reference standard are given,

[Contact: Clark A. Hamilton, (303) j 497-3740 or -3988] ^

i Kautz, R.L., Global Stability of Phase [ Lock Near Chaotic Crisis in the RF- q

Biased Josephson Junction, Journal of

Applied Physics, Vol, 62, No. 1, pp. q

1 98-21 1 (July 1 , 1 987) .

!

The global stability of phase lock in

the radiofrequency-biased Josephson

junction is studied through digital

simulations. Global stability is determined by calculating the lifetime of the | phase-locked state in the presence of I thermal noise. This lifetime, the mean > time required for thermal noise to in- ' duce a 2tt phase slip, increases exponentially with inverse temperature in the ; limit of low temperatures, and the lowtemperature asymptote can be parameterized in terms of an activation energy e

i

and an attempt time Tq* The activa- I tion energy is a useful measure of

global stability for both periodic and

chaotic phase-locked states. The

behavior of e and Tq is studied over a range of critical current densities

which take the system from a region of

harmonic motion through a period-doubling cascade and into a region of phaselocked chaotic behavior which is ended

by a chaotic crisis. At the crisis

point, the activation energy goes to

zero and the attempt time goes to infini

ity. The results are used to determine

the optimum critical current density for

series-array voltage standards.

[Contact: Richard L. Kautz, (303)

497-3391 or -3988]

Kautz, R.L., Hamilton, C.A., and Lloyd,

F ,L , , Series-Array Josephson Voltage

Standards, IEEE Transactions on Magnetics, Vol, MAG-23, No. 2, pp. 883-890

( March 1987)

.

Series arrays typically including 1500

Josephson junctions driven at 90 GHz

have been used to generate quantized I reference voltages in excess of 1 V.

Such standards simplify the procedure
Page 1

3

CEEE Technical Progress Bulletin - February 1988

Cr yoelectronic Metrology (cont'd.)

and reduce the measurement uncertainties

in the calibration of electrochemical

cells

.

[Contact: Richard L. Kautz, (303)

497-3391 or -3988]

Ono, R.H., Cromar, M.W., Kautz, R.L.,

Soulen, R.J., Colwell, J.H. , and Fogle,

W.E., Current-Voltage Characteristics

of Nanoampere Josephson Junctions,

IEEE Transactions on [Magnetics, Vol.

MAG-23, No. 2, pp. 1670-1 673 (March

1987) [Proceedings of the 1986 Applied

Superconductivity Conference, Baltimore, Maryland, Sept. 28-Oct. 3, 1986].

We have studied the current-voltage

( I-V) characteristics of small-area

tunnel junctions at temperatures below

1 K. Ihe junctions were made in an edge

geometry with an Nb base electrode and

had areas less than 0.05 ym^ and critical currents in the nanoampere range.

Although the measured I-V characteristics resemble those of ordinary hysteretic junctions, the supposed zero-voltage

portion of the curve proved to have a finite slope and to deviate from zero

voltage. For these junctions, it is

apparently possible for occasional 2tt phase slips to occur without switching

to the usual voltage state. This behavior can be explained either by macroscopic quantum tunneling or by a model

in which the effective shunt conductance

of the junction is frequency-dependent,

[Contact; Michael W. Cromar, (303) 497-

5375]

Peterson, R.L., Sinusoidal Response of

dc SQUIDS for rf Power Measurements,

NBS Journal of Research, Vol. 92, No.

4, pp. 253-259 (July-August 1987),

Current, power, and attenuation measurements with radiofrequency Superconduc ting Quantum Interface Devices (SQUIDs)

are based on the fact that the voltage

from the microwave readout circuit can

be made a nearly sinusoidal function of

the magnetic flux threading the SQUID.

We point out here that an asymmetric dc

SQUID with sufficiently low inductance

can achieve a very sinusoidal output

voltage with good modulation depth. The

spectral purity of the sinusoid can be

substantially better than that obtained

V7ith rf SQUID systems. The purity

improves with increasing asymmetry of

the junction critical currents, and

decreasing values of the LI^ product,

where L is the SQUID inductance and I(- is the smaller of the critical currents.

Results of several calculations are

presented. Substantial improvement in

SQUID methods of rf current, power, or

attenuation measurement may thus be

possible with use of such dc SQUIDs.

[Contact: Robert L. Peterson, (303)

497-3750 or -3227]

Zimmerman, J.E., Beall, J.A,, Cromar,

M.W., and Ono, R.H., Operation of a

Y-Ba-Cu-0 rf-SQUID at 81 K, Applied

Physics Letters, Vol. 51, No. 8, pp.

617-618 (August 24, 1987).

An rf superconducting quantum interference device (SQUID) has been made from

bulk Y-Ba-Cu-0. The device displays

quantum interference effects and operates with useful signal levels up to 81

K. The SQUID is formed from a ring of

Y-Ba-Cu-0 which is broken in the cryogenic environment and then recontacted.

Estimates of the SQUID noise performance

are given.

[Contact: James A. Beall, (303)

497-5989 ]

Antenna Metrology

Released for Publication

FitzGerrell, R.G., and Treado, M.J.,

Mobile Antennas.

This document establishes minimum performance requirements and methods of

test for mobile antennas mounted on

vehicles used by law enforcement agencies, and deals with antenna characteristics that determine the suitability

and effectiveness of antennas for law

enforcement use. The following four law
Page 1 CEEE Technical Progress Bulletin - February 1988

4

Antenna Metrology (cont'd.)

enforcement frequency bands are considered: 25 to 60 MHz, 150 to 174 MHz, 400

to 512 MHz, and 806 to 866 MHz. This

standard supersedes NILECJ-STD-0205.00,

Mobile Antennas dated May 1974.

[Contact: Richard G. FitzGerrell, (303)

497-3737]

Francis, M.H., and Hill, D.A., Out-ofBand Response of Array Antennas.

The National Bureau of Standards has

examined the out-of-band response of

array antennas from both a theoretical

and experimental point of view. From

theory, the out-of-band response of an

antenna is found to depend primarily on

two factors: the antenna input impedance and the antenna directivity. From

experiment, it is found that for most

practical purposes the out-of-band

response of an antenna can be estimated

from a measurement of the antenna input

reflection coefficient alone. If the

reflection coefficient is low, the

antenna response will be good; if the

reflection coefficient is high, the

antenna response will be poor,

[Contact: Michael H. Francis, (303)

497-5873]

Kanda, M., A Microstxip Patch Antenna

as a Standard Transmitting and Receiving Antenna.

This paper discusses the possibility of

employing a microstrip patch antenna as

a standard transmitting antenna. The

intrinsic properties of the substrate

used for the antenna are determined by

careful impedance measurements. The

experimental results indicate that the

transmitting characteristics of a microstrip antenna can be theoretically determined from its geometry. The microstrip patch antenna discussed here is

physically small (20 cm^ for 450 MHz)

and can be well matched to a power

delivery system ( SWR = 1.17).

[Contact: Motohisa Kanda, (303)

497-5320]

. , Experimental Study of

Interpanel Interactions at 3.3 GHz, ^ to be published in the Proceedings of

the 9th Annual Meeting and Symposium of P the Antenna Measurement Technique As so- ^ ciation (AMTA), Seattle, Washington, P September 28-October 2, 1987. ®

I The results of measurements on experi- ^ mental array panels in various configu- ^ rations are reported. In each of the ‘ configurations, both the near-field and

portside signals are measured to study

the interaction between array panels.

| These array panels consisted of 256 j microstrip radiating elements. In particular, the effects of open-circuited ! array panels on the radiation pattern of

a single panel are observed both in the j near field and in the far field. It is ? found that interpanel scattering is the

main mechanism of interaction between |; panels, rather than reradiation of signals received from adjacent panels. The |, effects of scattering are observable at i the -50 dB level. I [Contact: Lorant A. Muth, (303)

497-3603] |l

Repjar, A.G., Newell, A.C., and Francis, I M.H., Accurate Determination of i Planar Near-Field Correction Parcimeters

for Linearly Polarized Probes.

The receiving patterns of two probes,

for both amplitude and phase, must be

known and utilized to determine accurately the complete far field of an

antenna from near-field measurements. ! The process of incorporating the probe | characteristics in the far-field compu- I tation is referred to as "probe correction." When the antenna to be measured

is nominally linearly polarized, the l measurements are more accurate and efficient if nominally linearly polarized

probes are used. Further efficiency is

obtained if only one dual- polarized

probe is used to allow simultaneous

measurements of both components. It

should be noted, however, that a singleport probe can be rotated by 90 deg to

obtain the second component. A proce- ! dure used by the National Bureau of i; Muth, L. A Standards for accurately determining the
! CEEE Technical Progress Bulletin - February

j.

i Antenna Metrology (cont'd.)

plane-wave receiving parameters of both

single- and dual-port linearly polarized

probes is described. Examples are presented and the effect of these probereceiving characteristics in the calculation of the parameters for the antenna

being measured under test is demonstrated using appropriate planar nearfield theory.

[Contact: Andrew G. Repjar, (303)

497-5703]

Repjar, A,G., Newell, A.C., and Tamura,

D . T .

,

Extrapolation Range Measurements for Determining Antenna Gain and

Polarization, to be published as NBS

Technical Note 1311.

The extrapolation range measurement

technique for determining the power gain

and polarization of antennas at reduced

range distances is described. It is

based on a generalized three-antenna

approach and does not require quantitative a priori knowledge of the antennas.

During the past decade, it has been

extensively used by the National Bureau

of Standards [Boulder, Colorado] to

calibrate antenna gain standards for

industry and other agencies within ±0.1

dB . To help one understand how calibrations of this accuracy are achieved, the

extrapolation range description includes

discussions on the required theory, the

measurement procedures, the range configuration and instrumentation, the

errors, and some measurement examples.

Recent extensions of the extrapolation

method required for swept/stepped frequency gain calibrations and for corrections to reduce ground reflection

effects are also presented.

[Contact: Andrew G. Repjar, (303)

497-5703]

Wittmann, R.C., Spherical Wave Operators and the Translation Formulas.

Translation formulas for both scalar and

vector spherical wave solutions of the

Helmholtz equation are developed, in a straightforward and relatively uncomplicated manner, emphasizing powerful dif1 988 Page 1 5

ferential operator techniques. Additionally, the expansion coefficients are

given in compact integral or differential operator forms useful for analytic

investigation.

[Contact: Ronald C. Wittmann, ( 303)

497-3326]

Recently Published

Newell, A.C., The Effect of Random

Errors in Planar Near-Field Measurements, Proceedings of the 1986 IEEE

Antenna and Propagation Society Symposium, Philadelphia, Pennsylvania, June

8-13, 1986, pp. 196-198 (1987).

Equations have previously been derived

to predict the effect of systematic

errors in planar near-field measurements. Similar expressions for random

errors have not been generally available, although computer simulation has

been used to study some specific cases.

In this report, simple general expressions are derived to predict the effect

of random errors that require only minimal information about the antenna and

the error distributions.

[Contact: Allen C. Newell, ( 303)

497-3743]

Noise Metrology

Released for Publication

Daywitt, W.C., Horn Design Equations

for the NBS Horn-Type Noise Standards,

to be published as NBSIR 87-3073.

Equations are given for calculatinq the

interior dimensions of the horn pickup

in the NBS mi 1 lime ter- wave noise standards. The equations are used to design

the horn for negligible internal horn

reflections, resulting in an accurate

calculation of the horn attenuation.

[Contact: William C. Daywitt, (303)

497-3720 ]

Microwave & Millimeter-Wave Metrology

Released for Publication

Hoer, C.A.

,

Some Questions and Answers
Page 1 6 CEEE Technical Progress Bulletin - February 1 988

Microwave & Millimeter-Wave (cont'd.)

Concerning Air Lines as Impedance Standards .

This paper attempts to answer a number

of questions that arise when using one

or more lengths of precision transmission line to calibrate a dual six-port

ANA, questions such as: 1) How important is the quality of the test port

relative to that of the line? 2) What

type connectors should the line standards have? 3) What are the advantages

of using two lines instead of one line

and a through connection when test port

imperfections are considered? 4) How

many lines are optimum from a quality

control point of view? 5) What should

the lengths be?

The answers to these questions appear to

be: 1) The quality of the line is much

more important than that of the test

port, A perfect line will calibrate

out most imperfections in the test port.

An example is given where 75- 0, test

ports are calibrated with 50-$^ lines,

and then used to measure F relative to

50 0 with very little error, 2) Greatest accuracy is achieved with line standards having male connectors. 3) Two

lines get rid of many test port imperfections that one line cannot. 4) Three

lines will show up a problem if one line

is bad. Five lines will identify which

line IS bad. Five is probably optimum.

5) There may not be an optimum for the

actual lengths of a set of lines, but

there does appear to be an optimum dif- ference in the lengths,

[Contact: Cletus A. Hoer, (303)

497-3705J

Recently Published

Daywitt, W.C., Complex Admit:taiice of a

Lossy Coaxial Open Circuit with a Hollow Center Conductor, Metrologia,

Vol. 24, pp. 13-22 (1987).

The reflection coefficient and complex

discontinuity admittance of a coaxial

open circuit with a hollow center conductor are derived from fields correct

to first order in the skin depth. Results show an admittance terminating the

line at the plane of the discontinuity

and consisting of a resistance in parallel with a capacitive reactance. The i first-order fields are also used to

derive equations for the characteristic

admittance, series impedanc and shunt

admittance of the line. These equations

include terms neglected in the wellknown expressions used to calculate the

line parameters, enabling error limits

to be assigned to the latter,

[Contact: William C. Daywitt, (303)

497-3720] 1

Larsen, N.T., Microwave Power Stan-

| dards , Proceedings of the National | Conference of Standards Laboratories, ! 1987 Workshop and Symposium, Denver,

Colorado, July 12-16, 1987, pp, 34-1 - 34-7.

A general review of the history and

present status of the microwave power j standards in use at the National Bureau

of Standards (NBS) is presented. The | standards are calorimeters, and the ! quantity measured is "effective

efficiency." The calibration services i are based on these standards. The , design and evaluation of these standards

are discussed,

[Contact: Neil T. Larsen, (303)

497-3711]

Optical Fiber Metrology |

i

I

I Released for Publication I

L.i , X., and Gallawa, R.L., Calibrated

Optical Fiber Power Meters: Errors due

to Variations in Connectors.

We discuss the potential for errors in i the measurement of optical fiber power i using a calibrated power meter with

connectors of various types and from

different vendors. Data are given on

the error and standard deviation due to

biconic connectors from a limited number

of vendors. We speculate that the error

is due to reflecting surfaces on the
CEEE Technical Progress Bulletin - February 1988 Page 1

7

Optical Fiber Metrology (cont'd.)

connector end. To confirm the hypothesis, we tested two connectors whose

reflective ends have noticeable differences, The data illustrate the differences seen among connectors. Our data

indicate that a user should expect measurement error in most cases. We issue

a call for caution based on the results.

[Contact: Robert L, Gallawa, (303)

497-3830]

Li, X,, and Gallawa, R,L,, Potential

Errors in the Use of Optical Fiber

Power Meters,

We discuss the potential for errors

associated with the measurement of

optical power in a field environment.

Errors can arise because field use is

often inconsistent with the calibration

method. Errors may be due to the use of

connectors of different types and due to

variation amongst vendors for a given

connector type. We consider two of the

most popular connector types and discuss

their effect on power measurements,

[Contact: Robert L, Gallawa, (303)

497-3761

]

Recently Published

Danielson, B,L,, and Whittenberg, C ,D , , Guided-Wave ReflectcMnetry with Micrometer Resolution [Original title: A

New Method for High Resolution Reflectometry] , Applied Optics, Vol, 26, No,

14, pp, 2836-2842 (July 15, 1987),

We describe a new type of optical

reflectome try which is usefiiL in testing

single-mode lightguide systems. This

technique uses a scanning Michelson

interferometer in conjunction with a broadband illuminating source and crosscorrelation detection. High resolution

is achieved through the limited coherence of the backscattered radiation.

With this approach it is possible to

distinguish scattering centers separated

by only a few micrcxne ters. In some

cases loss may be estimated for components in the transmission path of a test

lightguide. The basic principles of

this diagnostic technique, along with

some performance characteristics, are

illustrated for an all-fiber reflectometer. We also discuss several laboratory

applications which serve to demonstrate

the resolution capabilities of this

measurement concept,

[Contact: Bruce L, Danielson, (303)

497-5620]

Electro-Optic Metrology

Released for Publication

Day, G,W,, Materials and Configurations for Faraday Effect Electric Current and Magnetic Field Sensors, to

be published in the Proceedings of the

International Conference on Optical

Fiber Sensors (OFS88) , New Orleans,

Louisiana, January 1988,

Materials and design techniques applicable to a wide range of Faraday rotation

sensor requirements, many of which could

not be solved with all-fiber designs,

are described,

[Contact: Gordon W, Day, (303)

497-5204]

Korde, R,, and Geist, J, , Quantum

Efficiency Stability of Photodiodes,

Applied Optics,

The stability of the quantum efficiency

of inversion layer, phosphorus diffused

(n-conductivi ty type on p) and boron

diffused (p on n) photodiodes has been

investigated. Unsatisfactory siliconsilicon dioxide interfaces, latent recombination centers in the diffused

layers, and moisture absorption by the

device were identified as possible

causes of instability. Diodes were

fabricated using processes in which

these sources of instability were carefully controlled. The resulting diodes

were subjected to long periods of

intense ultraviolet irradiation, baking

at 110°C, and baking at 100°F in a 100%

relative humidity environment in an

attempt to accelerate any instabilities
Page 1

8

CEEE Technical Progress Bulletin - February 1988 C

Electro-Optic Metrology (cont'd.)

that might be brought on by normal use

and handling. The external quantum

efficiency of the diodes was measured

before, and at intervals during, their

environmental stressing. Diodes made by

older procedures, in which some important parameters affecting stability were

not controlled, were included in the

study for comparison. The major result

of this work is the demonstration that n on p photodiodes are inherently more

stable than p on n types in the ultraviolet and blue spectral regions, but

that stable p on n devices can also be

produced with sufficient care.

[Contact: Jon Geist, (301) 975-2066]

Larson, D.R., and Phelan, Jr., R.J., A

Fast Optical Detector Deposited on

Dielectric Channel Waveguides.

VJe have fabricated a thin-film optical

detector for detecting short optical

pulses propagating in channel waveguides. The detectors show response

times of 200 ps full-width-at-halfmaximum amplitude when illuminated by

guided, subpicosecond optical pulses.

The detectors are formed by depositing

hydrogenated amorphous silicon (a-Si:H)

directly on the dielectric channel waveguides. Back-to-back Schottky photodiodes are then formed when interdigi tated

chromium-gold metal contacts are deposited on the a-Si:H.

[Contact; Donald R. Larson, (303)

497-3440]

Larson, D.R. and Phelan, Jr., R.J.,

Picosecond Pulse Response from

Hydrogenated Amorphous Silicon (a-Si:H)

Optical Detectors on Channel Waveguides, to be published in the Proceedings of the SPIE, Integrated Optical Circuit Engineering, Vol. 835.

We have fabricated high-speed optical

detectors on channel waveguides formed

by both potassium ion-exchange in glass

and titanium diffusion in lithium niobate. These new waveguide detectors

show response times of 200 picoseconds \ f ul 1-width-at-half-maximum amplitude

when illuminated with subpicosecond < optical pulses. The detectors consist

of back-to-back Schottky photodiodes

formed by chromium-gold metal contacts

on hydrogenated amorphous silicon

(a-Si:H). Using interdigi tated metal

contacts with the contact separation and

semiconductor film thickness dimensions

close to a micrometer results in detectors that are both fast and efficient.

[Contact: Donald R. Larson, (303)

497-3440]

Recently Published

Day, G.W., Hale, P.D., Deeter, M., Milner, T.E., Conrad, D. , and Etzel, S.M.,

Limits to the Precision of ElectroOptic and Magneto-Optic Sensors,

Optical Power Line Voltage and Current

Measurement Systems, Electric Power

Research Institute Report EPRI EL-5431,

Vol. 1 (September 1987) . [Also appeared with the same title, introduction, and short abstract as NBS Technical Note 1307 (March 1987).]

Ihis study began with a central question, "What precision can be achieved

with an electro-optic voltage sensor or

a magneto-optic current sensor?" The

answer has been pursued in numerous

ways, through an investigation of the

basic properties of materials and components, both as reported in the literature and new data generated in our laboratory; through attempts to demonstrate

the feasibility of overcoming certain

limitations in the properties of components; through analysis of some fundamental limitations, through the proposal

of new or refined designs, and through

discussions with numerous other investigators.

It was concluded that ease of obtaining

high precision (in a power systems context) is not included among the advantages of using optical sensors for measurement of electromagnetic quantities.

The principal difficulty was that sensors have to maintain their calibration
CEEE Technical Progress Bulletin - February 1988 Page 1

9

Electro-Optic Metrology (cont'd.)

over Proad temperature ranges (at least

1 00 C) without the possibility of temperature stabilization. Specifically,

using relatively standard approaches and

an appropriate definition of precision,

a precision not better than about ±1

percent can be expected. Achieving that

level will require wise choices of materials, components, and design, and numerous suggestions are offered.

Judgments about the commercial viability

of such devices are left to those more

expert in that subject. However, worstcase situations are encountered infrequently, and therefore represent pessimistic assessments of performance in

real applications. Also, the other

advantages of optical sensors may in

some applications be dominant considerations. Safety is one example.

Using passive temperature compensation

techniques may improve the precision of

optical sensors by a desired order of

magnitude. Several have been examined

analytically, and the authors suggest

that they be investigated further.

Other approaches, including temperature

compensation by measurement and adjustment, could be considered, but are not

discussed here. The developnent of

all-fiber or nearly all-fiber sensors

could provide very simple, low-cost

measurements, even if the highest precision is not achieved, and further work

in this area is suggested.

[Contact: Gordon W. Day, (303)

497-5204]

Geist, j. , Photxxiiode Quantum Efficiency and Spectral Responsivity SelfCalibration, proceedings of the IEEE

Instrumentation and Measurement Technology Conference, Boston, Massachusetts, April 27-29, 1987, pp. 75-79.

High-quality silicon photodiodes can be

used as primary radiometric standards in

the visible portion of the radiometric

spectrum. The physical basis for their

use as standards, and their performance

in areas pertinent to their use as standards, is reviewed.

[Contact: Jon Geist, (301) 975-2066]

Geist, J. , Recent Improvements in

RadicMnetric Accuracy Based on New Detector Technology, Remote Sensing of

Environment, Vol. 22, pp. 127-129

(1987) .

Until recently, the best accuracy

achievable in the measurement of radiometric properties was limited by the

accuracy of the ultimate radiometric

standard to which the measurement could

be traced. Since about 1980, however,

there have been such dramatic improvements in the accuracy of detector-based

standards that this is no longer the

case. These new radiometric standards

are briefly reviewed in this paper, with

emphasis on the intercomparisons that

demonstrate their accuracy.

[Contact: Jon Geist, (301) 975-2066]

Korde, R. , and Geist, J. , Staible, High

Qucuitxim Efficiency, UV-Enhanced Silicon

Photodiodes by Arsenic Diffusion,

Solid-State Electronics, Vol. 30, No.

1 , pp. 89-92 ( 1 987) .

Very high quantum efficiency, UV-enhanced silicon photodiodes have been

developed by arsenic diffusion into

p-type silicon as an alternative to the

inversion layer photodiodes commonly

used in precise radiometric and spectroscopic measurements. The fabricated

diodes had an unbiased internal quantum

efficiency that was 100% from 350 to 550

nm, and that exceeded 1 00% at shorter

wavelengths. A typical responsivity at

200 nm was 0.1 A/W . No degradation in

responsivity was detected anywhere in

the 200- to 1 1 00-nm range when these

devices were exposed to 20 mW/cm^ of

254-nm radiation for 60 days. Thus the

theoretical maximum value of internal

quantum efficiency for a diffused photodiode appears to have been achieved in

the UV and short wavelength visible,

without compromising the diode's longterm stability. Ihis is marked contrast

to older types of diffused photodiodes.
Page 20 CEEE Technical Progress Bulletin - February 1988

Electro-Optic Metrology (cont'd.)

exhibited a spectral response vs. flux

characteristic that changed considerably

with UV exposure.

[Contact: Jon Geist, (301) 975-2066]

Peterson, R.L., Numerical Study of

Currents and Fields in a Photoconductive Detector [previously titled

"Numerical Study of Currents and Fields

in a Semiconducting Optical Detector"] , IEEE Journal of Quantum Electronics,

Vol. QE-23, No. 7, pp. 1185-1192 (July

1 987) . A numerical study of the current, field,

and carrier density distributions within

a photoconduc tive detector is presented.

The photodetector, an interdigi tated

Schottky barrier diode, is made with

metallic fingers of alternating voltage

bias on a thin semiconductor layer grown

on a transparent dielectric substrate.

The Poisson and continuity equations for

electrons and holes are treated in two

dimensions. A modified successive line

overrelaxation method, faster than the

capacitance matrix method, is developed

as the Poisson solver. A simple alternative to the Scharfetter-Gumme 1 treatment of current density is also introduced. We investigated steady-state

cases with and without optical illumination, and transient responses to picosecond optical pulses. The steady-state

current shows near saturation with

increasing voltage, as observed experimentally. The calculated typical

response of the silicon detector to a picosecond optical pulse is a current

pulse lasting on the order of 10 ps.

[Contact: Robert L. Peterson, (303)

497-3750 or -3227]

Complex Testing

Recently Published

Stenbakken, G.N., and Souders, T.M.,

Test Point Selection and Testability

Measures via QR Factorization of Linear

Models, IEEE Transactions on Instrumentation and Measurement, Vol. IM-36,

No. 2, pp. 406-410 (June 1987). [Paper

given at the 29th Midwest Symposium on

Circuits and Systems, Lincoln, Nebraska, August 10-12, 1986].

An efficient algorithm is presented for

selecting test points for use in applications such as calibration and fault

diagnosis of electronic networks. The

algorithm, based on QR factorization of

the circuit sensitivity matrix, minimizes the prediction or estimation errors which result from random measurement error. A definition of testability

based on the concept of minimum estimation error is also introduced. Practical examples are given.

[Contact: Gerard N. Stenbakken, (301)

975-2440]

Other Fast Signal Topics

Recently Published

Oates, C.W., and Young, M., Microscope

Objectives, Cover Slips, and Spherical

Aberration, Applied Optics, Vol. 26,

No. 11, p. 2043 (June 1, 1987).

Microscope objectives with powers of 20X

and higher will display significant

spherical aberration when used to

examine an optical fiber without a cover

slip.

[Contact: Matt Young, (303) 497-3223 or

-5342]

ELECTRICAL SYSTEMS !

Power Systems Metrology

j

! Released for Publication

Anderson, W.E., A Calibration Service j for Voltage Transformers and High-Volt- | age Capacitors, to be published as a NBS Technical Note.

I The National Bureau of Standards call- ! bration service for voltage transformers j and high-voltage capacitors is j described. The service for voltage | transformers supports the measurement of i ratio correction factors and phase j angles at primary voltages up to 170 kV j and secondary voltages as low as 10

V at 60 Hz. Calibrations at frequencies

from 50 to 400 Hz are available over a more limited voltage range. The service
CEEE Technical Progress Bulletin - February 1988 Page 21

Power Systems Metrology (cont'd.)

for high-voltage capacitors supports the

measurement of capacitances and dissipation factors at applied voltages ranging

from 1 00 V to 170 kV at 60 Hz depending

on the nominal capacitance. Calibrations over a reduced voltage range at

other frequencies are also available.

As in the case with voltage transformers, these voltage constraints are

determined by the facilities at the

National Bureau of Standards,

[Contact: William E, Anderson, (301)

975-2423]

Kelley, E,F,, Nehmadi, M,, Hebner, R,E,,

McKenny, P,J,, and Forster, E,0,,

Simultaneous Measurement of Light

Emission, Current Pulses and Growth of

Prebreakdown Strecimers in Hexane, to

be published in the Proceedings of the

1 987 Conference on Electrical Insulation and Dielectric Phenomena,

Gaithersburg, Maryland, October 19-22,

1 987,

High-speed, image- converter photography

is used to document the growth characteristics of prebreakdown phenomena

emanating from a cathode needle in a needle-sphere electrode system placed in

a liquid, Ihe cathode streamer growth

characteristics are compared to the

pulsed nature of the current feeding the

streamer and light emission from the

streamer. The fact that there is a strong temporal correlation between the

current and light pulses is confirmed.

However, it is found that no strong

correlation exists between this pulselike behavior and the growth of the

prebreakoown event, but that the streamer is found to grow rather uniformly

despite the discreet nature of the current supplied. This information should

contribute to the development of theoretical modeling efforts on the generation and deve lopi:ient of prebreakdown

phenomena in liquids,

[Contact: Edward F, Kelley, (301)

975-2424]

Misakian, M,, and Anderson, W,E,, The

NBS Electxic Fields Project: 1987

Update,

The objectives of the NBS Electric

Fields Project include the evaluation of

instrumentation and measurement techniques which are used to characterize

the electrical parameters in the vicinity of high-voltage transmission lines

and in laboratory apparatus designed to

simulate the transmission line environment, During the past year, work has

continued on developing instrumentation

for measuring the mobility distribution

of atmospheric ions produced by corona

in air. The mobility K of an ion as it

moves through a gas under the influence

of a weak electric field is defined as

the average ion drift velocity divided

by the electric field strength. Measurement of this ion parameter provides

useful information regarding ion-molecule reactions in such areas as gaseous

electronics and plasma chromatography.

Knowledge of the ion mobility, in the

high-voltage dc transmission line context, permits an experimental determination of charge density, p, using the

relation J=pKE, where J and E are measured values of the ion current density

and electric field strength, respectively, In addition, an estimate of the ion

mass may be possible under certain conditions, The latter application would

be useful for characterizing exposure

conditions during bioeffects studies

with dc electric fields and ions. While

a complete characterization of the electrical environment in an exposure system

would include identification of the

ions, existing measurement systems require considerable expertise and are not

normally available for routine use. The

simpler mobility measurement, while not

as informative, could indicate changes

in ion composition.

At last year' s review, preliminary measurements of ion mobilities made using

ac time of flight techniques and a prototype parallel plate drift tube were

described. Since then two cylindrical

drift tubes employing guard rings have

been fabricated and are being tested;
Page 22 CEEE Technical Progress Bulletin - February 1988

Power Systems (cont'd.)

one drift tube functions as an ac timeof-flight device and the other as a pulsed time-of-f light device. A

description of the instrumentation and

examples of time-of-flight spectra for

ions produced by corona in air are presented. The mobility spectra obtained

in untreated room air shew considerable

structure and week-to-week variation

which suggests the need for some control

of air composition in exposure systems

during biological investigations. Data

have also been obtained which show that

double-mesh electrical shutters can act

as mobility filters and thus affect the

relative numbers of ions of different

mobility observed in a time-of-f light

spectrum. Other sources of measurement

error using the two measurement approaches are described. The drift tubes

differ in design from those normally

employing guard rings. Instead of generating a nearly uniform drift electric

field region with metal guard rings

stacked in a vertical configuration with

insulating spacers, the guard rings

consist of coated conductive rings on

the inside wall of a cylindrical insulating tube. Efforts to fabricate a drift tube with a uniform resistive

coating on the inside wall of a cylindrical tube have been, to date, unsuccessful. The NBS Electric Fields Project is supported by the Office of Energy

Storage and Distribution of the Department of Energy

.

[Contact; Martin Misakian, (301)

975-2426]

Aschwanden, T. , Van Brunt, R.J., and

Bieber, M.E., Analysis of Dielectric

Strength Data for Binary Electronegative Gas Mixtures, Proceedings of the

XVIII International Conference on Phenomena in Ionized Gases, University of

Wales, Swansea, United Kingdom, July

1 2-1 6, 1 987, pp. 1 02-1 03.

The consistency among dielectric

strength, electron swarm, and collision

cross-section data for ionization,

attachment, and momentum transfer have

been determined for the binary gas mixtures SFg/He, SFg/Ne, SF^/Ar, and

SFg/CO using a theoretical approach

recently developed by Van Brunt. Dielectric strength data for SF^/Ar and

D SF^/CO measured by Aschwanden can be

accurately described by the model calculation and exhibit a high degree of

consistency with swarm and cross-section

data. The model also appears to successfully describe preliminary electrical breakdown data for SF /Ne mixtures.

The theoretical model fails for SF^/He

because it does not allow for the important effect of Penning ionization which

is possible in this case.

[Contact: Richard J. Van Brunt, (301)

975-2425]

Fitzpatrick, G.J. , Forster, E.O., Hebner, Jr., R.E., and Kelley, E.F.,

Prebreakdown Cathode Processes in

Liquid Hydrocarbons, IEEE Transactions on Electrical Insulation, Vol.

EI-22, No. 4, pp. 453-458 (August

1987)

.

Measurements are presented of the initiation of prebreakdown streamers at a point cathode in liquid hydrocarbons.

Using a computer implementation of the

method of images, the electric field is

computed for selected geometries to

confirm that the field strengths in the

vicinity of these streamers are probably

high enough so that electron multiplication processes can occur. High-magnification photographs of streamer initiation show that the initial streamer

velocity is (2.8 ± 0.4) x 10^ cm/s in

toluene.

[Contact: Robert E. Hebner, Jr., (301)

975-2403]

Hebner, Jr., R.E., Research for Electric Energy Systems - An Annual Report, NBSIR 87-3643 (September

1987)

.

This report documents the technical

progress in the five investigations

which make up the project "Support of

Research Projects for Electrical Energy

Systems," funded by the U.S. Department
CEEE Technical Progress Bulletin - February 1988 Page 23

Power Systems (cont'd.)

of Energy. To support the measurement

of ions in the do transmission line

environment, techniques to measure ion

mobility were evaluated. In addition,

techniques were developed to determine

the sensitivity of an AM radio to detect

partial discharges in a biological exposure facility. Within the project to

develop measurement techniques and obtain basic data for gaseous dielectrics,

a theoretical method was developed to

evaluate the consistency among electron

collision, transport, and dielectric

strength data for binary gas mixtures;

the gas phase hydrolysis rates for SOF

2

and SOF^ were measured; the corona discharge oxidation mechanisms were identified and the role of negative ions on

the SOF^ yield was determined. Progress

in interfacial measurements included the

optical measurement of the electric

field distribution as a streamer initiates. Progress in developing measurements for nanosecond dielectrics was in

the characterization of the errors in

the measurement of voltage pulses using

E-dot probes and the identification of

the reducation of breakdown voltage in

oil for faster pulses.

[Contact; Ronald H. McKnight, (301)

975-2403]

Hebner, R.E., Kelley, E.F., FitzPatrick,

G.J., and Forster, E.O. , The Effect

of Pressure on Streamer Inception and

Propagation in Liquid Hydrocarbons,

Proceedings of the Ninth International

Conference on Conduction and Breakdown

in Dielectric Liquids, Salford, United

Kingdom, July 27-31, 1987, unpaged

(July 1987)

.

This paper shows that for pressures

between 0.1 and 5.0 MPa, the structure

of a streamer originating from a cathode

is significantly modified while that

initiating fromi an anode is relatively

unchanged, in toluene and hexane. For

cathode streamers, the inception voltage

increased from 40 ± 6 kV at 0.1 MPa to

99 ± 22 kV at 5.0 MPa. For anode

streamers, the inception voltage

increased from 53 ± 6 kV at 0.1 MPa to

123 ± 55 kV at 5.0 MPa.

[Contact: Edward F. Kelley, (301)

975-2424]

Hillhouse, D.L., Assessment of Future

Optical Measurements of Voltage and

Current in Electric Power Systems

,

Optical Power Line Voltage and Current

Measurement Systems; Electric Power

Research Institute Report EPRI EL-5431,

Vol. 2 (September 1987).

This report summarizes the results of an

investigation into the technical and

economic justifications for improving

power system voltage and current measurements, with special emphasis on the

prospects for doing this using optical

technology. The investigation consisted

of gathering, analyzing, and summarizing

information obtained specialists in over

a dozen representative major utilities,

and from nearly twenty equipnent manufacturers. From this and other information, an assessment of measurement needs

and of the availability of the requisite

technology was developed.

The report concludes that although the

technical and economic arguments either

for or against optical technology for

power system measurements are inconclusive, there is a widespread consensus

that optical technology will become

incorporated into the power grid. The

consensus is based on such factors as

the need for more accurate metering and

the increasing automation of the power

grid.

[Contact: Ronald H. McKnight, (301)

975-2403]

Oldham, N.M., Laug, O.B., and Waltrip,

B.C., Digitally-Synthesized Power

Calibration Source, IEEE Transactions

on Instrumentation and Measurement,

Vol. IM-36, No. 2, pp. 341-346 (June

1987) [CPEM 86 Proceedings issue]

.

A digitally synthesized source of "phantom" power for calibrating electrical

power and energy meters is described.

Independent sources of voltage, current.
Page 24 CEEE Technical Progress Bulletin - February 1988

Power Systems (cont'd.) Superconductors

and phase angle are programmable between

0 and 240 V, 0 and 5 A, and 0 and 360

deg, respectively. The accuracy of the

active and reactive power is estimated

to be within ±100 ppn of the full scale

apparent power (volt-amperes) . [Contact: N, Michael Oldham, (301)

975-2408]

Petersons, O. , and Mehta, S.P«, An

Active High Voltage Divider and Phase

Shifter, IEEE Transactions on

Instrumentation and Measurement, Vol.

IM-36, No. 2, pp. 362-368 (June 1987)

[CP EM 86 Proceedings issue] .

An instrument combining the functions

of an active high voltage divider and a phase shifter designed to yield small

phase-angle uncertainties within 20

yrad IS described. It is based on a circuit employing a feedback amplifier

and a controlled source. The presence

of the controlled source greatly reduces

the potential of dynamic instabilities

of the feedback loop and effectively

eliminates the errors associated with

the finite gain of the amplifier.

Design and construction details and the

results of the accuracy evaluation are

presented,

[Contact: Oskars Petersons, (301)

975-2400]

Released for Publication

Chen, D.-X. , Goldfarb, R,B., Nogues, J. , and Rao, K.V. , Susceptibility Measurements of a Sintered and Powdered

Y-Ba-Cu-0 Superconductor.

The real and imaginary parts of magnetic

ac susceptibility of a sintered

Y-Ba-Cu-0 superconductor were measured

as functions of temperature. The susceptibility may be separated into two

contributions, one sensitive and the

other relatively insensitive to the

magnitude of the measuring field. The

former is partially suppressed upon

coarsely crushing the sample. It is

completely suppressed after finely powdering, whereupon the susceptibility

curves become insensitive to the magnitude of the measuring field. Several

models might be consistent with the

results,

[Contact: Ronald B. Goldfarb, (303)

497-3650]

Ekin, J.W., Capone, D.W,, Zaluzec, N. , Flandermeyer, B., deLima, O.F., Braginski, A. I., Panson, A.J. , Janocko, M.A.,

Hong, M., Kwo, J. , and Liou, S.H.,

Evidence for Anisotropy Limitation on

the Transport Critical-Current in Polycrystalline YiBaaCUjO*.

Sleek, L.W., and Van Brunt, R.J.,

Transfer of F“ in Collisions of

with Fluorinated Gases and SO at

Thermal Energies, Proceedings or the

Fifteenth International Conference on

the Physics of Electronic and Atomic

Collisions, Brighton, United Kingdom,

July 22-28, 1987, p. 710.

Measured temperature dependences of F“

transfer rates for collisions of SF,

with SOF^, , SOF. , SO.

SiF^ are reported.

6

Ihe results are used

to interpret the complex anionic chemistry that occurs during electrical discharges in SFg.

[Contact: Richard J. Van Brunt, (301)

975-2425]

Measurements of the transport criticalcurrent (Jc^ / magnetization J^., and

magnetoresistance in a number of bulk

sintered samples of Y^Ba^Cu^O^ from

several different laboratories are dominated by "weak-link" regions between

high-J^ regions. The weak-link J^^ has a tunneling character, decreasing by

two orders of magnitude as the magnetic

field is increased from 0.1 mT to 10 mT,

at 77 K. An examination of the grain

boundary region in Y ^Ba ^Cu shows no

impurities or nonstoichiome trie regions

on a scale of 5 A. These microscopy

data and recent reports of intrinsic

anisotropy of Jq in single crystals

are consistent with a significant part

of the weak-link phenomena in polycrys-
CEEE Technical Progress Bulletin - February 1988 Page 25

Superconductors (cont'd.)

tailine bulk Y,Ba„Cu_Ov being caused

by grains oriented with their weak-conduction axis in the direction of current

flow. Orienting the grains in the powder state during processing may result

in high in bulk Y^Ba

2 Cu 20x« [Contact; John W. Ekin, (303) 497-5448]

Kamper, R.A., and Clark, A.F., Superconductivity: Challenge for the

Future, to be published in the Proceedings of the Federal Conference on

Commercial Applications of Superconductivity, Washington, DC, July 28-29,

1 987.

This is a brief report on the Federal

Conference on Commercial Applications of

Superconductivity, Washington, DC, July

28-29, 1987.

[Contact: Robert A. Kamper, (303)

497-3535]

Moreland, J.M., Goodrich, L.F., Ekin,

J.W., Capobianco, T.E., and Clark,

A.F., Anomalous Behavior of Tunneling

Contacts in Superconducting Perovskite

Structures, to be published in Advances in Cryogenic Engineering (Materials) , Vol. 34.

Our break junction results for electron

tunneling spectroscopy of the perovskite

superconductors La-Sr-Cu-0 and Y-Ba-Cu-0

are similar to those obtained using

thin-fiim, scanning tunneling microscopy, and point-contact methods. Energy

gap structures are sometimes observed in

the measured current-voltage characteristics. More often, however, the characteristics are anomalous when compared

to previous tunneling studies of BCS

superconductors. The anomalies include

linearly increasing conductance with

voltage, large deviations in junction

conductance above the gap edge, and

junction diode action. VJe discuss some

possible explanations for these observations . [Contact; John M. Moreland, (303)

497-3641]

Recently Published

Goldfarb, R.B., Clark, A.F., Braginski,

A.I., and Panson, A.J., Evidence for

Two Superconducting Components in Oxygen-Annealed Single-Phase Y-Ba-Cu-0,

Cryogenics, Vol. 27, pp. 475-480 (September 1 987)

.

The complex susceptibility of a sintered

Y-Ba-Cu-0 superconductor is strongly

dependent on ac field amplitude, H.

Very small values of H must be used

for the real part of susceptibility, y' , to reach a value corresponding to bulk

diamagnetism just below the critical

temperature, T^ , The imaginary part,

x", represents hysteresis loss in the

sample. Thus, y" versus temperature

becomes positive when H exceeds the

lower critical field, ^cl/ the

superconductor.

Annealing the material in oxygen gives

rise to two distinct components, a relatively high-Tc' high-Hcl superconductor (denoted as 'G' or 'good' ) and

a relatively low-T^i , low-H^^,

superconductor (denoted as 'B' or

'bad' ) . Curves of susceptibility versus

increasing temperature reflect the dual

nature of the annealed sample; y' has

an inflection at the T^ of the B component and approaches zero at the T^^ of the G component, while y" has a peak

at each T^ . Both critical temperatures decrease linearly with increasing

H, though at very different rates.

of the G component is considerably greater than 1 of the B component. The lower critical fields are

linearly decreasing functions of temperature.

Two models might explain the susceptibility data. In the grain model, the G

component consists of superconducting

grains, and the B component is either

intergranular material, unfavourably

orientated anisotropic grains, or oxygen-depleted grain boundaries. In the

surface model, the G component is in the

interior of the sample, and the B com-
Page 26 CEEE Technical Progress Bulletin - February 1988

Superconductors (cont'd.)

ponent is at the sample's surface. This

condition could arise if there was oxygen depletion at the surface subsequent

to total enrichment during annealing.

[Contact: Ronald B. Goldfarb, (303)

497-3650]

Goldfarb, R.B., Clark, A.F., Panson,

A . J . , and Braginski, A. I., AC Susceptibility Measurements Near the Critical

Temperature of a Y-Ba-Cu-0 Superconductor, Proceedings of Symposium S, 1987

Materials Research Society Meeting,

Anaheim, California, April 23-24,

1987, pp. 261-263.

The loss component of complex susceptibility of a Y-Ba-Cu-0 superconductor

near its critical temperature is strongly dependent on ac field amplitude but

virtually independent of frequency.

This implies that magnetic hysteresis is

the major loss mechanism in these materials. The temperature at which the

loss first becomes positive upon warming

corresponds to an equivalence between

the amplitude of the ac field and the

lower critical field of the superconductor.

[Contact: Ronald B. Goldfarb, (303)

497-3650]

Moreland, J.M., Squeezable Junctions

for Electron Tunneling and Surface

Electric Field Experiment, The Physics Teacher, pp. 405-411 (October

1 986)

.

Mechanically adjusted junctions can be

used for electron tunneling or surface

electric field measurements. This article conceptualized their application to

semiconductors, superconductors, and

surface physics of conducting materials.

[Contact: John M. Moreland, (303)

497-3641

]

Moreland, J.M., Clark, A.F., Ku , H.C.,

and Shelton, R.N*, Electron Tunneling

Measurement of the Energy Gap in a

La-Sr-Cu-0 Superconductor, Cryogenics, Vol. 27, pp. 227-228 (May 1987).

We have used the break-junction technique to determine the energy gap of

lanthanum-strontium-copper-oxide, one of

the new high-critical- temperature superconductors. The current-voltage characteristics demonstrated a variety of

tunneling behaviours. The best characteristic indicating quasiparticle tunneling between superconducting electrodes implied an energy gap of 7.0 ± 0.1 meV. Derivatives of other characteristics showed weak structure indicating possible energy gaps up to 9 meV.

[Contact: John M. Moreland, (303)

497-3641

]

Moreland, J.M., Ekin, J.W., Goodrich,

L.F., Capobianco, T.E., Clark, A.F.,

Kwo, J. , Hong, M., and Liou, S.H.,

Break-Junction Tunneling Measurements

of the High-T^, Superconductor

Y ^Ba

2CU jO g_ 5

, Physical Review B,

Vol. 35, No. 16, pp. 8856-8857 (June 1,

1987)

.

Current-voltage tunneling characteristics in a high-critical- temperature

superconducting material containing

predominately Y j Ba 2CU ^0 g~ <5 have been

measured using the break-junction technique. Sharp gap structure was

observed, with the largest superconductive energy gap measured to be A = 19.5

± 1 meV, assuming a superconductorinsulator-superconductor junction. This

energy gap corresponds to 2 A/kgTc = 4.8 at T = 4 K, for a critical temperature of 93 K (midpoint of the resistive

transition)

.

[Contact: John M. Moreland, (303)

497-3641]

Moreland, J.M., Clark, A.F., Goodrich,

L.F., Ku, H.C., and Shelton, R.N.,

Tunneling Spectroscopy of a La-Sr-Cu-0

Break Junction: Evidence for StrongCoupling Superconductivity, Physical

Review B, Vol. 35, No. 16, pp. 8711-

8713 (June 1 , 1987) .

Detailed structure in the quasiparticle

tunneling has been observed in

La-Sr-Cu-0 superconductive tunneling

junctions using the break-junction tech-
CEEE Technical Progress Bulletin - February 1988 Page 27

Superconduc tors (cont'd.)

nique. Variability in the energy gap

and associated structure in the currentvoltage curves are observed indicating

significant inhomogeneity in the superconducting properties. Large energy

gaps (7.0 meV) and deep structure in the

conductance derivative are evidence for

a strong- coupling mechanism.

[Contact: John M. Moreland, (3 03)

497-3641

]

Moreland, J.M., Goodrich, L.F., Ekin,

J.V^., Capobianco, T.E., and Clark,

A.F., Electron Tunneling Measurements

of High Tq Compounds Using Break

Junctions, Japanese Journal of Applied Physics, Vol. 26, Supplement, No,

26-3, pp. 999-1000 (August 1987).

[Proceedings of the 18th International

Conference on Low Temperature Physics,

Kyoto, Japan, August 10-16, 1987.]

We report on the break junction technique and its application to the high

superconductors LaSrCuO and YBaCuO.

In this technique, bulk samples are

fractured and the freshly fractured

surfaces adjusted to form a tunneling

junction with vacuiom or liquid helium as

the insulating barrier. Precise mechanical adjustment permits the study of

electron tunneling phenomena between

pieces of a bulk superconductor. The

current-voltage characteristics of these

break junctions are variable, indicating

sample inhomogeneity. However, some

junction settings result in the more

familiar quasi-particle signatures in

the current-voltage characteristics.

Low-leakage junctions indicate the

presence of a sharp superconductive

energy gap as well as large variations

in junction conductance above the gap

edge in both materials,

[Contact: John M. Moreland, (303)

497-3641]

Moreland, J.M., Goodrich, L.F., Ekin,

J.W., Capobianco, T.E., Clark, A.F.,

Braginski, A.I., and Panson, A.J.,

Josephson Effect Above 77 K in a YBaCuO

Break Junction, Applied Physics Letters, Vol. 51, No, 7, pp. 540-541

( August 17, 1987),

We have observed the Josephson effect in

a YBaCuO break junction. Critical currents as high as 1 0 mA were measured at

4 K for break junctions with a point

contact within the fracture of a sample.

The junction was susceptible to microwave radiation showing Shapiro steps

with the ratio of V/f of 2.04 ± 0.05

yV/Ghz compared to the pair tunneling

value of h/2e = 2.068 yV/GHz. These

steps were clearly visible in the

cur rent- vol tage characteristics at

temperatures up to 85 K.

[Contact: John M, Moreland, (3 03)

497-3641]

Magnetic Materials & Measurements

Released for Publication

Capobianco, T.E. and Vecchia, D.F.,

Coil Parameter Influence on Eddy

Current Probe Sensitivity, to be

published in the Proceedings of the

Review of Progress in Quantitative

Non-Destructive Evaluation,

Results of a study undertaken to quantify causes of sensitivity variations

found in commercial eddy current probes

are reported. Electrical parameter

measurements made on a number of commercially produced coils indicate that coil

reproducibility is not a major problem

in the probe construction process. On

the other hand, commercial probes

designed for a particular inspection can

have sensitivities differing by almost

an order of magnitude. It appears that

while individual probe manufacturers can

produce many identical probes, the

choice of coil design parameters can

lead to flaw-detectability variations in

eddy current probes obtained from different sources.

This study evaluates the effects on

sensitivity of changes in the physical

parameters of small ferrite core coils.

Among the parameters studied were wire

gauge, number of wire turns, coil aspect
Page 28 CEEE Technical Progress Bulletin - February 1988

Magnetic Materials, etc, (cont'd.)

ratio, ferrite permeability, and operating frequency. The criteria used to

gauge probe sensitivity are the

impedance changes observed on applying

the coils to four semi-elliptical electrical-discharge-machined notches in

aluminum and to aluminum and titanium

test blocks. The results indicate that

coils with similar electrical characteristics but different physical parameters

can have significant differences in

s ensitivi ty

.

[Contact: Thomas E. Capobianco, (303)

497-3141]

Recently Published

done on a draft military standard for

characterizing commercial eddy current

probes are reported. We discuss measurement techniques that have been evaluated for suitability as a characterization test method, such as field mapping

and various electrical parameter measurements, and the reasons for selecting

the method which has been incorporated

in the present draft. Our conclusion is

that the measurement of impedance change

of a probe over a range of frequencies

on two metals of different conductivities offers the best indicator of eddy

current probe sensitivity and proper

operating range.

[Contact: Thomas E. Capobianco, (303)

497-3141 ]

Capobianco, T.E., A Review of Eddy

Current Research at the National Bureau

of Standards in Boulder, Colorado,

Proceedings of the DoD Conference on

Nondestructive Evaluation, Charleston,

South Carolina, October 29-31, 1985,

pp. 164-173 (August 1987).

On-going research in eddy current nondestructive evaluation at the National

Bureau of Standards in Boulder, Colorado, is reviewed. The most recent

results and publications of experimental

and theoretical studies are presented.

This induces the areas of eddy current

coil characterization and field mapping,

experimental verification of eddy

current-fatigue crack interaction, uniform field probe calibration, artifact

standards, fatigue crack growth monitoring, and differential eddy current probe

s tudies

.

[Contact: Thomas E. Capobianco, (303)

497-3141]

Capobianco, T.E., and Fickett, F.R., A

Proposed Military Standard for Commercial Eddy Current Probes Based on Performance Characterization, Proceedings of the 35th Defense Conference on

Nondestructive Testing, Hill Air Force

Base, Utah, October 28-30, 1986, pp.

135-141 (October 1 986)

.

The latest results of the work being

ELECTROMAGNETIC INTERFERENCE

Radiated Electromagnetic Interference

Released for Publication

FitzGerrell, R.G., and Treado, M.J. , Monopole Impedance and Gain Measurements of Finite Ground Planes, to be

published as National Institute of

Justice Report 200-87.

The purpose of the work described in

this report is to determine if it is

possible to make acceptably accurate

input impedance and gain measurements of

monopoles on a reduced size ground

plane. Ideally, monopoles are measured

with the antenna located on an infinite,

perfectly conducting, ground plane.

Practically, measurements are usually

made on a test site with a highly conducting ground plane whose radius is at

least 2X, where X is the wavelength. At

25 MHz, the lowest frequency considered

in this report, such a ground plane

would require a space at least 48 m (157

ft.) in diameter. Model impedance measurements and calculations presented in

this report imply that a space on the

order of 10 by 11 m (3 3 by 36 ft.) may

be sufficient if the researcher uses 16

resistively loaded wire radials to extend a 3.66 by 4.88 m (12 by 16 ft.)

solid metal ground plane. Measured and

i
CEEE Technical Progress Bulletin - February 1988 Page 29

Radiated EMI (cont'd.)

solid metal ground plane. Measured and

calculated monopole SWR and insertion

loss on a full-scale ground plane verify

the results of the model measurements.

[Contact: Richard G. FitzGerrell, (303)

497-3737J

Koepke, G.H., Hill/ D.A., and Ma, M.T.

Analysis of an Array of Log-Periodic

Dipole Antennas for Generating Test

Fields, to be published as NBSIR

87-3068.

An analysis of log-periodic dipole

antennas was extended to study their use

in arrays designed for electromagnetic

susceptibility measurements. Parameters

of an array of five log-periodic dipole

antennas were calculated and in some

cases compared to a single log-periodic

dipole antenna. These parameters were

used to evaluate the tradeoffs that

exist in the design of an optimum transmitting antenna for susceptibility measurements.

[Contact: Galen H. Koepke, (303)

497-5766]

Ma, M.T./ Understanding Reverberating

Chambers as an Alternative Facility for

EMC Testing.

A relatively new facility called a reverberating chamber designed for electromagnetic compatibility (EMC) testing

is described. The purpose is to create

a statistically uniform electric field

inside a metal enclosure for testing

radiated susceptibility or immunity of

equipnent. Design criteria in terms of

the number of cavity modes, mode density, and composite quality factor are

presented in detail in order to understand the physical insight and to

enhance interpretations of measurement

results. Recent experimental data are

included to illustrate the underlying

principle.

[Contact: Mark T. Ma, (303) 497-3800]

Wu, D.I., and Chang, D.C., An Investigation of a Ray-Mode Representation of

the Green' s Function in a Rectangular

Cavity, to be published as NBS Technical Note 1312.

In a rectangular cavity, it is well

known that a point source-excited field

can be represented either in terms of

summation of modes or in terms of rays

produced by the equivalent image

sources. Both representations involve

series that are slowly convergent, so

computation of fields inside the cavity

is difficult. To obtain a numerically

efficient scheme, a hybrid ray-mode

representation is developed here using

the finite Poisson summation formula.

The modal representation is modified in

such a way that all the modes near

resonance are retained while the truncated remainder of the mode series is

expressed in terms of a weighted contribution of rays. For a large cavity, the

contribution of rays from far away

images becomes small, therefore the ray

sum can be approximated by one or two

dominant terms without a loss of numerical accuracy. To illustrate the accuracy and the computational simplification

of this ray-mode representation, numerical examples are included with the conventional mode series (summed at the

expense of long computation time) serving as a reference.

[Contact: Doris I. Wu, (303) 497-3214]

Recently Published

Camell, D.G., Larson, E.B., and Cruz,

J.E., NBS Calibration Procedures for

Horizontal Dipole Antennas (25 to 1000

MHz), NBS Technical Note 1 309 (April

1987)

.

This publication describes the theoretical basis and test procedures for horizontally polarized dipole calibrations

at the National Bureau of Standards.

Two different techniques and two

different test sites are used. The

standard antenna method uses the

calculation of a field strength level,

from the response of a simple half-wave

dipole, to calibrate an antenna. This

method is used at an open field site in
Page 30 CEEE Technical Progress Bulletin - February 1988

Radiated EMI (cont'd.)

of 200 MHz to 1 000 MHz . Procedures for

both techniques are explained and

measurement setups are illustrated.

Measurement uncertainties are discussed.

Sample reports are included for both

methods

,

[Contact: Dennis G, Camell, (303)

497-321 4]

FitzGerrell, R,G,, Standard Linear

Antennas, 30 MHz to 1000 MHz, IEEE

Transactions on Antennas and Propagation, Vol, AP-34, No, 12, pp, 1425-1429

(December 1986), [Proceedings of the

Conference on Electromagnetic Compatibility, University of York, United

Kingdom, September 28-October 2, 1986,

pp, 1 47-1 53] ,

It is demonstrated that the insertion

loss between pairs of thin, linear

antennas may be calculated using fairly

simple equations that are generally

considered to be good engineering

approximations. Although the insertion

loss calculation does not involve antenna gain directly (some measurements are

actually made in the near-field where

gain is not defined) , the result is

precisely the quantity obtained using

the antenna gains in Friis' s transmission formula, assuming the mismatch

loses are zero. Therefore, the antenna

gain product is implicit in the more

general insertion loss equations. The

particular measurement of insertion loss

used here yields a quantity called site

attenuation by electromagnetic compatibility engineers, A close agreement

between measured and calculated data

provides confidence in the site attenuation calculations when the site is

essentially perfect, and provides confidence in the gain product of the

antenna pair calculated using basically

the same equations as those used for

insertion loss. It is assumed that

one-half of the mean value of the difference between the calculated and measured data is a good estimate of individual antenna performance. For the

antennas described here, this measure of

performance is typically <0,05 dB and on

the outside, <0,42 dB,

[Contact: Richard G, FitzGerrell, (303)

497-3737]

Hill, D,A,, Effect of a lliin Conduct- j ing Sheet on the Fields of a Buried

Magnetic Dipole, Electromagnetics,

Volume 7, pp, 71-79 (1987),

The effect of a thin conducting sheet on

| the fields of a subsurface vertical

magnetic dipole has been analyzed. The

integral representation of the fields

has been evaluated numerically, and

numerical results for the vertical magnetic field above the source at the

surface are presented in parametric

form. It is found that the predicted

fields give better agreement with previous transmission measurements than do

the fields of a homogeneous half-space

model,

[Contact: David A, Hill, (303)

497-3472]

Conducted Electromagnetic Interference

Released for Publication

Kanda, M,, A Microstxip Patch Antenna

as a Stcindard Transmitting and Receiving Antenna,

This paper discusses the possibility of

employing a microstrip patch antenna as

a standard transmitting antenna. The

intrinsic properties of the substrate

used for the antenna are determined by

careful impedance measurements. The

experimental results indicate that the

transmitting characteristics of a microstrip antenna can be theoretically determined from its geometry. The microstrip patch antenna discussed here is

physically small (20 cm^ for 450 MHz)

and can be well matched to a power

delivery system ( SWR = 1,17),

[Contact: Motohisa Kanda, (303)

497-5320]

Recently Published

Bell, B,A, A Report on the NBS/CEEE
i: CEEE Technical Progress Bulletin - February 1988 Page 3

1

Conducted EMI (cont'd.)

Survey of Electronic Measurement Needs

Below 10 MHz, Proceedings of the

National Conference of Standards Laboratories, 1987 Workshop and Symposium,

Denver, Colorado, July 12-16, 1987, pp.

75-1 - 75-1 4.

This paper describes the results of a recent survey conducted by the Electrosystems Division of the Center for Electronics and Electrical Engineering

(CEEE) at the National Bureau of Standards (NBS) . A summary analysis is

provided of the data obtained on questions concerning (1) critical electrical

quantities and associated instrumentation and devices, (2) automatic test

equipment ( ATE) /c omplex measurement

systems, and (3) conducted electromagnetic interference.

[Contact: Barry A.

975-2402]

Bell, (301

)

Martzloff, F .D . , and Wilson

Fast Transient Tests - Trivial or

Terminal Pursuit?, Proceedings of the

Electromagnetic Compatibility 1987,

Zurich, Switzerland, March 3-5, 1987,

pp. 283-288 (March 1987).

Measurements, augmented by theoretical

simulation techniques, have been performed to determine the attenuation of

fast transients propagating in typical

indoor (conduit-enclosed) power lines.

The rise time of the applied pulses

ranges from 0.7 to 50 ns, including the

International Electrotechnical Commission (lEC) 5/50 ns pulse recently recommended for fast transient tests. Theory and measurements confirm that pulse

amplitude attenuation increases significantly for shorter pulses. For comparison and validation of the theoretical

model, the lEC pulse was also applied to

a conventional coaxial cable.

[Contact: Francois D. Martzloff, (301)

975-2409]

ADDITIONAL INFORMATION

Lists of Publications

and Miller,

C .K . S . , A Bibliography of the NBS

Electromagnetic Fields Division Publications, NBSIR 85-3040 (February

1986)

.

This bibliography lists publications of

the National Bureau of Standards' Electromagnetic Fields Division for the

period from January 1984 through September 1985, with selected earlier publications from the Division's predecessor

organizations.

[Contact: Kathryn A. Gibson, (303)

497-31 32]

Kline, K.E., and DeWeese, M.E., Metrology for Electromagnetic Technology:

A Bibliography of NBS Publications,

NBSIR 87-3074 (June 1987).

This bibliography lists the publications

of the personnel of the Electromagnetic

Technology Division of NBS in the period

from January 1970 through December 1986.

A few earlier references that are directly related to the present work of

the Division are included.

[Contact: Kathryn E. Kline, (303)

497-3678]

Palla, J.C., and Meiselman, B., Electrical and Electronic Metrology: A

Bibliography of NBS Electrosystems

Division Publications, NBS List of

Publications 94 (January 1988).

This bibliography covers publications of

the Electrosystems Division, Center for

Electronics and Electrical Engineering,

NBS, and of its predecessor sections for

the period January 1963 to January 1988.

A brief description of the Division's

technical program is given in the introduc tion.

[Contact: Jenny C. Palla, (301)

975-2220]

Walters, E.J., Semiconductor Measurement Technology, NBS List of Publications 72, [a bibliography of NBS

publications for the years 1962-1987]

( March 1 988)

.

Gibson, K.A., Page, J.M., This bibliography contains reports of
Page 32 CEEE Technical Progress Bulletin - February 1988

Lists of Publications (cont'd.)

work performed at the National Bureau of

Standards in the field of Semiconductor

Measurement Technology in the period

from 1962 through December 1987. An

index by topic area and a list of

authors are provided.

[Contact: E. Jane Walters, (301)

975-2050]

1988 CEEE Calendar

February 10-12 (San Diego, CA)

IEEE Semiconductor Thermal and Temperature Measurement Symposium. This

fourth annual SEMI-THERM symposium

is sponsored by the Components, Hybrids,

and Manufacturing Technology Society of

IEEE in cooperation with NBS and constitutes an international forum for the

presentation of new developnents in, and

applications relating to, generation and

removal of heat within semiconductor

devices and measurement of junction

temperatures experienced in various

applications and environments. Major

SEMI-THERM topic areas include thermal

measurements, thermal characterization,

applications, and computation and software .

The program includes keynote speakers,

technical presentations, tutorial sessions, workshops, and an exhibit. In

addition, the Semiconductor Bquipnent

and Materials Institute has scheduled in

conjunction with SEMI-THERM a meeting of

its Thermal Measurements Task Force, to

which attendees are invited. [Contact:

Frank F. Oettinger, (301) 975-2054]

May 11-13 (Los Angeles, CA)

Intersociety Conference on Thermal

PhencMnena in Fabrication and Operation

of Electronic Components. This Conference is sponsored by the Components,

Hybrids, and [Manufacturing Technology

Society of the IEEE, in cooperation with

ASME Committee K-16 on Heat Transfer and

NBS. It is intended to provide an

interdisciplinary forum for exploring

the progress made in understanding,

analyzing, and modeling thermal transport processes and thermally induced

failures in the fabrication, assembly,

and use of logic, memory, and datastorage systems. Major topic areas

covered are 1 ) processing and fabrication, including state-of-the-art semiconductor crystal growing techniques;

thermal stress in wafers, chips, substrates, PC boards, and joints; and

encapsulant behavior with respect to

solidification, outgassing, mechanical

properties, and water vapor diffusion

and absorption; 2) packaging technology,

including means for cooling components

from cryogenic to high temperatures and

reliability as affected by failure

mechanisms such as dopant migration and

interme tallic growth; and 3) peripheral

equipment, including data storage in

both magnetic and optical media and

thermal issues in dot-matrix and thermal

printer heads. The conference is being

held in conjunction with the Electronics

Components Conference (May 9-11) at the

same site. [Contact: Frank F. Oettinger, (301) 975-2054]

September 1 2-14, 1988 (San Jose, CA)

VLSI and GaAs Chip Packaging Workshop.

This Workshop is co-sponsored by the

Components, Hybrids, and Manufacturing

Technology Society of IEEE and NBS;

attendees are expected to be knowledgeable in the field and to participate in

discussions. Topic areas include: VLSI

and wafer-scale package design (characterization and implementation, cost and

performance-driven solutions) ; package

thermal design (characteristics, results, and issues); package interconnection options (wire bonding, TAB, flip

chip, or optical) ; GaAs IC packaging

(high-speed packaging considerations);

package electrical issues (reduction of

parasitics, improvements in electrical
CEEE Technical Progress Bulletin - February 1988 Page 33

1988 CEEE Calendar (cont'd.)

performance, reduction in line resistance) ; integrating package design (from

die to system, including assembly and

test issues) ; VLSI package materials

advancements; die-attach solutions for

large chips; and new failure mechanisms

in VLSI packaging. [Contact: George G.

Harman, (301) 975-2097]

Planned

Early summer (Vail, CO)

Combined Short Course on Optical Fiber

and Laser Measurements. [Contact:

Aaron A. Sanders, (303) 497-5341]

Early fall (Boulder, CO)

Fiber Optics Symposium. [Contact:

Aaron A. Sanders, (303) 497-5341]

Late tall (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers (20th Boulder Damage

Symposium). [Contact: Aaron A.

Sanders, (303) 497-5341]

CEEE SPONSORS

National Bureau of Standards

Department of Defense

Defense Nuclear Agency; Defense

Advanced Research Projects

Agency; National Security

Agency; Combined Army/Navy/ Ai

r

Force Calibration Coordination

Group

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Newark Air Force Station; Rome

Air Developnent; Space & Missile

Organization; Hanscom Air Force

Base; U.S. Air Force

Headquarters; VJr igh t-Patterson

Air Force Base

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Aviation System Command; Fort

Belvoir; Fort Monmouth; Harry

Diamond Laboratory; Materials &

Mechanics Research Center;

Redstone Arsenal; Strategic

Defense Command; AVRADCOM

(Aviation)

U.S. Navy

Naval Surface Weapons Center;

Naval Ocean Systems Center; Naval

Ordnance Systems Command; Naval

Air Test Center; Ordnance

Disposal Technology Center;

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Office of Naval Research; Naval

Air Engineering Center; Naval Sea

Systems Command; Naval Weapons

Station; Naval Postgraduate School;

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Energy Systems Research; Fusion

Energy; High Energy & Nuclear

Physics; Bonneville Power

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NBS-114A (REV. 2»8C) U.S. DEPT. OF COMM.

BIBLIOGRAPHIC DATA

SHEET (See instructions)

1. PUBLICATION OR

REPORT NO.

NBSIR 88-3713

2. Performing Organ. Report No. 3. Publication Date

February 1988

4. TITLE AND SUBTITLE

Center for Electronics and Electrical Engineering Technical Progress Bulletin

Covering Center Programs, July to September 1987, with 1988 CEEE Events Calendar

5. AUTHOR(S)

E. Jane Walters, compiler

6. PERFORMING ORGANIZATION (If joint or other than NBS, see instructions)

NATIONAL BUREAU OF STANDARDS

U.S. DEPARTMENT OF COMMERCE

GAITHERSBURG, MD 20899

7. Contract/Grant No.

8. Type of Report & Period Covered

July-September 1987

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street, City. State, ZIP)

10.

SUPPLEMENTARY NOTES

All technical information included in this document has been approved for publication previously.

I I Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11.

ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bi bliography or literature survey, mention it here)

This is the twentieth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. This issue of the CEEE Technical Progress Bulletin covers

the third quarter of calendar year 1987. Abstracts are provided by technical area

for both published papers and papers approved by NBS for publication.

12.

KEY WORDS (S/x to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolon s) antennas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers; semiconductors; superconductors

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Center Headquarters (720) Director, Mr. Judson C. French (301) 975-2220

Deputy Director, Mr. Robert I. Scace (301) 075-2220

Electrosystems Division (722) Chief, Dr. Oskars Petersons (301) 975-2400

Electromagnetic Fields Division (723) Chief, Dr. Ramon C. Baird (303) 497-3131

Electromagnetic Technology Division (724) Chief, Dr. Robert A. Kamper (303) 497-3535

Semiconductor Electronics Division (727) Chief, Mr. Frank F. Oettinger (301) 975-2054

INFORMATION:

For additional Information on the Center for Electronics and Electrical Engineering, write or call:

Center for Electronics and Electrical Engineering

National Bureau of Standards

Metrology Building, Room B-358

Gaithersburg, MD 20899

Telephone (301) 975-2220 ^