V file copy

DO NOT REM'

NBSIR 77-1231 ~ Measurement of Transistor

Collector- Emitter

Saturation Voltage

K. O. Leedy

Electronic Technology Division

Institute for Applied Technology

National Bureau of Standards

Washington, D.C. 20234

June 1977

Final

Prepared for Defense Nuclear Agency

Washington, D.C. 20305

V

«N

NBSIR 77-1231

MEASUREMENT OF TRANSISTOR

COLLECTOR-EMITTER

SATURATION VOLTAGE

K. 0. Leedy

Electronic Technology Division

Institute for Applied Technology

National Bureau of Standards

Washington, D.C. 20234

June 1977

Final

Prepared for Defense Nuclear Agency

Washington, D.C. 20305

U S. DEPARTMENT OF COMMERCE, Juanita M. Kreps, Secretary

Dr. Sidney Harman, Under Secretary

Jordan J. Baruch, Assistant Secretary for Science and Technology

NATIONAL BUREAU OF STANDARDS, Ernest Ambler, Acting Director

TABLE OF CONTENTS

Page

Abstract . 1

Introduction 1

Definition of Saturation . 3

Measurement Method ... 4

Temperature Effects 5

Current Effects 10

Other Important Parameters 22

Summary 27

Acknowledgment ..... 28

References 28

Appendix 29

Distribution 43

LIST OF FIGURES

Page

1. Illustration of the three transistor operating regions:

cut-off, active, and saturation 2 2a. Collector-emitter voltage as a function of temperature for

each of the three 2N2222 transistors 6

2b. Collector-emitter voltage as a function of temperature for

each of the three 2N3055 transistors 7 2c. Collector-emitter voltage as a function of temperature for

each of the three 2N5840 transistors 8

3. Typical change in collector-emitter voltage as a function

of temperature for the three device types with the data

averaged for the three samples of each type 9

4a. Collector-emitter voltage as a function of duty cycle for

each of the three 2N5840 transistors 11

iii
List of Figures (continued)

Page

4b. Typical change in collector-emitter voltage as a function

of duty cycle averaged for the three 2N5840 transistors .... 12

5a. Collector-emitter voltage as a function of collector current

with a fixed base current of 15 mA for each of the three

2N2222 transistors 14

5b. Collector-emitter voltage as a function of collector current

with a fixed base current of 400 mA for each of the three

2N3055 transistors 15

5c. Collector-emitter voltage as a function of collector current

with a fixed base current of 200 mA for each of the three

2N5840 transistors 16

6. Typical change in collector-emitter voltage as a function

of change in collector current 17

7a. Collector-emitter voltage as a function of base current

with a fixed collector current of 150 mA for each of the

three 2N2222 transistors 18

7b. Collector-emitter voltage as a function of base current

with a fixed collector current of 4 A for each of the three

2N3055 transistors 19

7c. Collector-emitter voltage as a function of base current

with a fixed collector current of 2 A for each of the three

2N5840 transistors 20

8. Typical change in collector-emitter voltage as a function of

change in base current 21

9a. Collector-emitter voltage as a function of collector current

for different values of forced 8 for a 2N2222 transistor ... 23

9b. Collector-emitter voltage as a function of collector current

for different values of forced 8 for a 2N3055 transistor ... 24

9c. Collector-emitter voltage as a function of collector current

for different values of forced 8 for a 2N5840 transistor ... 25

10. Illustration of Kelvin connections 26

iv
Measurement of Transistor

Collector-Emitter Saturation Voltage

K. 0. Leedy

Institute for Applied Technology

National Bureau of Standards

Washington, D. C. 20234

ABSTRACT

This report presents a detailed method for the measurement

of collector-emitter saturation voltage. The method which is

included in the Appendix is proposed for standardization. The

report also contains a description of the laboratory confirmation of the method and a discussion of the precautions to be

taken to assure repeatability of the measurement. Emphasized

is the necessity to determine that the conditions for saturation are met during the measurement.

INTRODUCTION

There are three regions of transistor operation: cut-off, active,

and saturation. These are illustrated in figure 1 which shows curves of

collector current versus collector-emitter voltage for different values

of base current. For transistors used in switching applications the cut

off and saturation regions are most important. In saturation, or in the

"on" state, an ideal transistor switch should have a very low resistance

approaching that of a short circuit so that the voltage drop across the

collector-emitter terminals approaches zero. This voltage drop is called the collector-emitter saturation voltage and is usually represented

in specification literature by the symbol ^CE(SAT) *

The saturation voltage is an important parameter because it can be

used to predict the performance of a transistor used in switching apparatus such as in d-c to a-c power inverters, chopping circuits, or logic

circuits. It represents the "zero" logic level in many types of digital

circuits. It is important to know how low the collector-emitter voltage

becomes in saturation because during saturation the transistor passes

the most current for the longest periods of time, and power dissipation

at the collector can become excessive. When a system design is to be

used in a radiation environment, it is important to know the change in

saturation voltage as a result of radiation dose so that the design can accommodate the changed value.

In the application of a transistor in circuit, it is not always nec essary to know the actual Vce(sAT)> that is, the collector-emitter voltage of a transistor operating in the saturation region. Instead, it is

important to know that for the bias conditions of interest, the

collector-emitter voltage is less than a specified value. The circuit

designer would have assumed this value, probably from knowledge of

1
Ic

Figure 1. Illustration of the three transistor operating regions:

cut-off, active, and saturation.

2
Vce(SAT) f°r that transistor type. The measurement method attached < a be used to determine if a particular transistor will meet the requirement if the test for saturation is omitted.

From the diagram in figure 1, it is apparent that saturation is a region and that Ve e(SAT) is not a single point but rather a line. Its

value depends on the collector current and base current among other variables. The purpose of the measurement presented here is to adequately

define all variables so that a repeatable measurement of is possible. The method itself is given in the Appendix. It can be used for

any Vce(SAT) measurement but it is most useful when a measurement of a change in Vqe(SAT) is required. Normally, when Vqe(sAT) i s measured, it

is for the purpose of assuring that it be less than a maximum voltage in

a specification. This implies that better devices have lower values of

Vce(sAT)’ Therefore, it is to the advantage of the manufacturer to re- port a low value. To perform his measurement, he then need only control

his parameters to the extent that he obtains a measured value of Vqe(SAT)

low enough to meet the specification. To measure a change in V^^g^T) » however, it is necessary to make the measurement twice with all important independent variables specified and carefully controlled.

DEFINITION OF SATURATION

By definition, 1 a transistor is operating in the saturation region

when both the emitter-base and the collector-base junctions are forwardbiased. The collector-emitter voltage in this condition has two components: the junction saturation voltage, defined below, and the voltages

due to the collector saturation current in the collector series resistance and due to the emitter current in the emitter series resistance.

The base series resistance can be neglected.

The junction saturation voltage is the difference between the

forward-biased junction voltages of the collector-base and the emitterbase junctions. It is given by the Ebers and Moll 2 expression as:

1 -

AV.

J

kT

In

T c1 - °N

h

aN .

1 + - a - V

where

AV = junction saturation voltage, V

J T = absolute temperature, K

a = common base large signal d-c current gain with the emitter

N functioning as an emitter and the collector functioning as a collector

3
= common base large signal d-c current gain with the emitter

functioning as a collector and the collector functioning as an emitter

I = collector current, A

I = base current, A

B

k = Boltzman's constant (1.381 x 10 23 J/K)

q = charge on electron (1.602 x 10 -19 C)

.

The saturation voltage is then given by

VCE(SAT)

where

r C = collector series resistance, f2

r^ = emitter series resistance, fi.

The junction saturation voltage is normally small and rather insensitive to variations in collector or base current because of the logarithmic relation. Of more significance, particularly for power transistors, is the saturation voltage due to the resistive component. The

collector region of many power transistors is lightly doped to obtain

high breakdown voltages and the transistor is usually operated at high

currents in saturation. Under conditions which affect Vce(SAT) , such as an increase in temperature or an exposure to radiation, the effect on

the collector resistance can produce a major change in Vce(SAT)

as can

the effects of variations in transistor gain.

The method for measuring Vce(SAT) as outlined in the Appendix re- quires that the following measurement conditions be specified:

3) ambient temperature

4) selection of a pulsed or d-c method, and

5) the pulse width and duty cycle (if other than 300 ys and 2%,

respectively)

.

This information must be included in the specification for V^e(sat)

for the particular device to be tested, such as in the detailed specifiMEASUREMENT METHOD

1) I - the collector current

2) I B the base current

4
cation in the appropriate military standard, if the specification is to

be meaningful. The method instructs the user how to determine all circuit values. It describes all necessary apparatus, procedural steps to

be performed, data to be taken, and cautions to be observed.

Using this method, several experiments were performed to determine

the sensitivity of the measured Vce(SAT) to several variables. Three

transistor types were chosen for these experiments: a small-signal tran

sistor (2N2222) , a single-diffused power transistor (2N3055) , and a triple-diffused power transistor (2N5840) . These devices are found in

military systems and each is available in a military version. These device types were selected to provide a wide variation in measured results

for variations in the measurement parameters. Three devices of each

type were used for each experiment. All were off-the-shelf commercial

transistors. Though the number of devices used is small, the data indicate the trends in the effects of the variables and, as such, indicate

which parameters are necessary to control carefully and which are not.

TEMPERATURE EFFECTS

The value of V^E^g^) is dependent on temperature in at least two

ways: first, temperature appears in the expression for the junction

saturation voltage, and second, the collector series resistance is a function of temperature. The method specifies that the measurement be

made at a nominal temperature of 20° C and that the power levels used do

not give rise to significant heating of the junction. To investigate

the effects of elevated temperature on the value of Vqe(SAT) > the follow

ing experiments were performed.

To simulate a rise in the ambient temperature, the transistors were

placed in a heated oil bath whose temperature was controlled at approximately 10°C intervals from room temperature to 100°C during measurement

of Vce(SAT)- Sufficient time was allowed for the transistor to reach a steady-state temperature between measurements.

Figure 2 shows the measured value of Vc E (gAT) versus temperature

for the three transistor types studied. In each case the base current was pulsed with a 2% duty cycle and a pulse width of 300 ys. Both the

2N2222, figure 2a, and 2N3055, figure 2b, show a small increase in

VcE(SAT) with temperature while the 2N5840, figure 2c, shows a much

greater increase. It is to be expected that the 2N5840 would be much

more sensitive to temperature since it is designed to have a very high

breakdown voltage. In order to have a high breakdown voltage, the collector region has a very low doping level which provides a high collector series resistance with a high temperature coefficient. To compare

the performance of the three transistor types, the data in figure 2 was plotted in figure 3 as percentage change in Vcjr(gAT) f rom its value at

room temperature as a function of temperature. In this case the percent

change in VCE ( SAT ) is

5
COLLECTOR

— EM

UTER

VOLTAGE

(V)

.13

0.14

0.15

0-16

0.17

0-18

0-19

0-20

0-21

I - 150 mA

l B = 15 mA

20.00 40.00 60.00 80.00 100-00 120.00

TEMPERATURE (DEGREES C)

Figure 2a. Collector-emitter voltage as a function of temperature for

each of the three 2N2222 transistors.

6
COLLECTOR-EMITTER

VOLTAGE

(V)

0.55

0-60

0.65

0-70

0-75

0.80

0-85

0-90

0-95

'c - * A

Ig = 4 00 mA

20-00 40-00 60-00 80-00 100-00 120-00

TEMPERATURE (DEGREES C)

Figure 2b. Collector-emitter voltage as a function of temperature for

each of the three 2N3055 transistors.

7
COLLECT0R-EM

I

TTER

V0LTAGE

(V)

0.50

1.00

1.50

2.00

2.50

3-00

3-50

4-00

4-50

20.00 40.00 60.00 80.00 100.00 120.00

TEMPERATURE (DEGREES C)

Figure 2c. Collector-emitter voltage as a function of temperature for

each of the three 2N5840 transistors.

8
Figure 3. Typical change in collector-emitter voltage as a function of

temperature for the three device types with the data averaged

for the three samples of each type.

9
VCE(SAT) (Elevated TemP~> - V

CE(SAT) (R°°"»Temp.)

V

CE(SAT) ( R°°mTe»P-)

These curves show that for practical measurement conditions, normal labo

ratory temperature conditions are adequate as deviations of less than

10°C result in changes in of less than 5%. However, with some transistor types when a very precise measurement is required, ambient

temperature changes can be significant. For this reason, the method re- quires that the ambient temperature be measured and recorded.

Examination of the manufacturer’s specified value of thermal resistance for these devices would indicate that a temperature rise of two or three degrees Celsius at most would result from junction heating at

the low power levels of the saturation region if the transistor is properly mounted with a heat-sink. According to the previous measurements,

this would yield very little change in ^CE(SAI)

However, since the

measurement could be made in a condition where the transistor was not

properly mounted on a heat-sink, it was decided to determine the effect

of junction heating. Also examined was the effect on the measurement of

VCE(SAT) of errors in the setting of the duty cycle, from the normal val

ue of 2% to 25%. The duty cycle is the fraction of the cycle in which

the pulse is on. It is given by the pulse width divided by the period

of the cycle and is usually expressed as a percentage. Since the duty

cycle is dependent on both the pulse width and the pulse repetition rate errors in either can be expressed as an error in the duty cycle. The

measurement of Vgg(g^'p) versus duty cycle was made only on the 2N5840

since it was the most sensitive to temperature variation.

The results of the measurements are shown in figure 4. Figure 4a

shows VQE(gAi') as a function of duty cycle with a fixed pulse width of

300 ys for each of the three devices measured. Figure 4b shows average

percentage change in Vgg^g^-j^ for the three devices as a function of

duty cycle. It is apparent that the duty cycle can be increased from 2 to 20 percent with the measured value of Vcg(sAT) changing only by 5%.

Errors in setting the duty cycle or pulse width for small deviations

from the nominal 2% duty cycle and 300-ys pulse width would not be significant. However, the method allows that other values be used if re- quired by the specification. If other values of duty cycle and pulse

width are to be used, the possible effect of temperature should be considered.

CURRENT EFFECTS

The effect of both the base and the collector currents on the measured value of Vcg(gAg) was investigated. Variations in these currents

affect the measurement in two ways. First, a change in collector current will alter the term of the saturation voltage. This can produce a change in the measured value of V^E^g^T) approximately proportion

al to the change in collector current. Second, changing either current

can cause the transistor to operate in the active region instead of the

saturation region. This will increase the measured value of Vqe by sev10
COLLECTOR-EMITTER

VOLTAGE

(V)

0-60

1.00

1.20

1.40

1.60

1.00

2.00

2.20

2-40

l c = 2 A

l„ = 200 mA

D

*

5.00 10.00 15.00 20.00 25.00 30.00

DUTY CYCLE (PERCENT)

Figure 4a. Collector-emitter voltage as a function of duty cycle for

each of the three 2N5840 transistors.

11
Figure 4b. Typical change in collector-emitter voltage as a function of

duty cycle averaged for the three 2N5840 transistors.

12
eral hundred percent for changes in Ig of only tens of percent. Obviously, this value of collector-emitter voltage is not Vq^(sAT)* Assuring that the transistor is indeed operating in the saturation region during the measurement of Vce(sAT) is of utmost importance.

As was indicated earlier, the definition of saturation is when both

the collector-base and the emitter-base junctions are forward-biased.

In practice the bias conditions to assure saturation are difficult to

determine. It is more convenient to observe the gain to determine saturation. The d-c common emitter current gain, 8, is the ratio of Iq to

Ig. When the transistor is operating in the saturation region, this ratio is referred to as the forced gain, since both Ig and Ig are set in

order to force the transistor to operate in saturation. It is convenient to consider a transistor to be in saturation if

e r , « 8 . forced active

Measurements were made of Vqe as a function of base and collector

currents for the three transistor types. The base and collector currents were sensed with a current transformer, the output of which was viewed on an oscilloscope. As outlined in the method, the current could

have been measured by using an oscilloscope with a differential input to

measure voltage across resistors in series with the base and the collector.

The results of varying Iq with Ig fixed are shown for the 2N2222 in

figure 5a, for the 2N3055 in figure 5b, and the 2N5840 in figure 5c. In

each case the value chosen for Ig was the value required in the detailed

military specification. The value required for Ig in that specification

is indicated by an arrow in each case. The data are combined in figure

6 which shows the percentage change in Vqe versus percentage change in

I q for the three transistor types. Each data point represents the average value for the three devices sampled. Similar curves of V^g versus

Ig, with Ic constant, are shown in figure 7. Figure 8 shows the results

combined. Again, in each case, the value which was fixed for Ig is from

the detailed military specification and the Ig value required in that

specification is noted.

The results show that Vce is sensitive to both Ig and Ig in most

cases. Errors in measuring these currents can result in significant er- rors in the measured value of Vce(sAT) . For this reason the method

stresses the necessity of making accurate measurements of these currents.

The portion of the curves where the slope is very steep represents operation of the transistor in or very near the active region. A measurement

of Vce here is not of Vce(SAT) • When Ig and Ig (or the forced 8) are selected in the specification for this method, care should be taken so that this measurement is made well within the saturation region so that errors in setting the currents will not cause the measurement to be made

in the active region. For the three transistor types used in this report, the value of forced 8 given in the detailed specification of the

military standard is 10 in each case. That is, the Vce(sat) measurement is made with an Ig to Ig ratio of 10. This is the same value chosen for

13
COLLECTOR-EMITTER

V0LTRGE

(V)

0.20

0.25

0.30

0.35

0.40

0.45

0.50

Figure 5a. Collector-emitter voltage as a function of collector current with a fixed base current of 15 mA for each of th6

three 2N2222 transistors.

14
COLLECTOR-EMITTER

VOLTAGE

(V)

•30

0.40

0.50

0.60

0.70

0.80

0.90

1.00

1.10

COLLECTOR CURRENT (A)

Figure 5b. Collector-emitter voltage as a function of collector cur- rent with a fixed base current of 400 mA for each of the

three 2N3055 transistors.

15
COLLECTOR-EMITTER

VOLTAGE

(V)

.50

1.00

1.50

2-00

2.50

3.00

3-50

4.00

4.50

o'. 50 I'.OO I'.SO 2

'.00 2

'.50 3*. 00

COLLECTOR CURRENT (A)

Figure 5c. Collector-emitter voltage as a function of collector cur- rent with a fixed base current of 200 mA for each of the

three 2N5840 transistors.

16
CHANGE

IN

COLLECTOR-EMITTER

VOLTAGE

(PERCENT)

-50.00

0.00

50.00

100.00

150.00

200.00

250.00

300.00

350.00

2N5840

2N2222

-100.00 -50.00 0V00 50.00 100.00 150.00

CHANGE IN COLLECTOR CURRENT (PERCENT)

Figure 6. Typical change in collector-emitter voltage as a function of

change in collector current.

17
COLLECTOR-EMITTER

VOLTAGE

(V)

.15

0.16

0.17

0.18

0.19

0.20

0.21

0.22

I+

10.00 20.00 30.00 40.00 50.00 60.00

BASE CURRENT (mfl

)

Figure 7a. Collector-emitter voltage as a function of base current

with a fixed collector current of 150 mA for each of the

three 2N2222 transistors.

18
COLLECTOR

— EMI

TTER

VOLTAGE

(V)

.00

2.00

3.00

4.00

5-00

6-00

7.00

8-00

9.00

0.10 0.20 0.30 0.40 0.50 0.60

BASE CURRENT (A)

Figure 7b. Collector-emitter voltage as a function of base current

with a fixed collector current of 4 A for each of the

three 2N3055 transistors.

19
COLLECTOR-EMITTER

VOLTAGE

(V)

.00

2.00

3.00

4.00

5-00

6.00

7-00

8-00

9-00

BASE CURRENT (A)

Figure 7c. Collector-emitter voltage as a function of base current

with a fixed collector current of 2 A for each of the

three 2N5840 transistors.

20
CHANGE

IN

COLLECTOR-EMITTER

VOLTAGE

(PERCENT)

0-00

50.00

100-00

150.00

200-00

250-00

300-00

350-00

400-00

2N584Q

- 100.00 - 50.00

CHANGE IN

0.00 50.00

BASE CURRENT

100.00 150.00

(PERCENT)

Figure 8. Typical change in collector-emitter voltage as a function of

change in base current.

21
nearly every transistor for which there is a detailed military specification. It is also the ratio commonly given on manufacturer's specification sheets. In our case, for the 2N2222 which has a 3 in the active

region in excess of 100, the condition for saturation is easily met with

a forced 3 of 10. Also, for the 2N3055, which has a normal 3 of about

50, the condition is satisfied over a wide range of currents. For the

2N5840, however, which has a minimum specified gain of only 10, using a forced 3 of 10 is operating very near the active region.

To illustrate the effect of forced 3 on the measurement of Vqe(SAT)

an investigation was made into the effect of varying this factor. Figure 9 shows Vce as a function of Iq for different values of forced 3-

It can be seen that as the forced 3 approaches the normal 3 of the transistor, small variations in 1^ give increasingly larger variations in

Vcjt. If the measurement point is on one of these steep curves, precise

measurement of V^e is difficult and it is doubtful whether the results

represent Vce(SAT)* It is not the intent of the method to describe how

to choose the forced 3 of the specification. Since it is very important

the method gives guidelines for its selection and outlines a test which

can be made to determine if the selection provides operation in the satu

ration region.

OTHER IMPORTANT PARAMETERS

There are other practical considerations for measuring Vqe(SAT) par

ticularly in power transistors where the collector currents used can be

many amperes so that even a small series resistance in the voltage measuring circuit can be a serious source of error. The use of Kelvin con- nections, such as illustrated in figure 10 for a transistor in a TO-3

package, can eliminate most of these series resistance problems. With

Kelvin connections the voltage measuring circuit is separated from the

current driving circuit. The voltage measurement is made with a very

high impedance instrument so that there is a negligible amount of current in that portion of the circuit. There is a separate set of leads

to which the current driving circuit is attached. If there is an extraneous resistance in the voltage measuring circuit, the voltage drop across it is negligible. If there is an extraneous resistance in the

current driving circuit, the voltage drop across it is not involved in

the voltage measurement and therefore will not lead to an error in measuring v

CE ( SAT ).

Note in figure 10 that Kelvin connections are made only to the

emitter and collector leads. No voltage measurement is made in the base

circuit so that Kelvin connections are not required.

The method requires Kelvin connections to be made on the collector

and emitter leads for all types of transistors tested. There are perhaps transistor types which have a high Vce(sAT) at a low collector current for which Kelvin connections are not essential. It is difficult to

incorporate into the method a means of judging when to use Kelvin connec

tions since the possible size of an extraneous resistance is not known.

Since the majority of transistor types require Kelvin connections in any

22
COLLECTOR

-EMITTER

VOLTAGE

(V)

•10

0.15

0.20

0.25

0.30

0.35

0-40

0.45

0.50

Figure 9a. Collector-emitter voltage as a function of collector current

for different values of forced 3 for a 2N2222 transistor.

23
COLLECTOR-EMITTER

VOLTAGE

(V)

0.20

0.40

0.60

0.80

1-00

1.20

1.40

1-60

1-80 ©

l ‘.00 2

'.00 s

'. 00 4*. 00 00 6

'.00 COLLECTOR CURRENT (A)

Figure 9b. Collector-emitter voltage as a function of collector current

for different values of forced B for a 2N3055 transistor.

24
Figure 9c. Collector-emitter voltage as a function of collector current

for different values of forced 3 for a 2N5840 transistor.

25
26

Figure

10.

Illustration

of

Kelvin

connections.
case, it is more appropriate to require their use on all transistor

types.

The effect of another type of extraneous resistance is not correctable by the use of Kelvin connections. These are series resistances

that occur in the circuit between the transistor and the point where the

voltage sensing connection is made. The current provided by the current

driving circuit will cause a voltage drop across such a resistance which

will be measured by the voltage measuring circuit as part of Vcg(gAT)

An example of such a resistance is the resistance of the leads of the

transistor. For this reason, the method requires that contact be made

reproducibly to the transistor within 3 mm of the transistor case. Another source of resistance is contact resistance due to poor or dirty

contacts. The method requires that the transistor holder have good qual

ity contacts and that they be kept clean.

Another source of error in the measurement of Vce(SAT) is variations in the measurement circuit itself. The current levels used, particularly for power transistors, require considerable power dissipation

in the resistors in the collector circuit. Care should be taken to select resistors that are capable of handling this power without changing

resistance. In the pulsed method, a temperature drift in the resistors

Rg and Rg could cause serious error in the measurement of Vce(SAT) because the measurement would be made at the wrong values of Ig and Iq.

When the pulsed method is used, the voltage measurement of

must be made with an instrument capable of measuring the voltage of one portion of a pulse with respect to the ground potential. See figure 3

in the method. This measurement can be made with an oscilloscope if it

is capable of accurately following the pulse from the high level which

occurs when the current pulse is off to the low level of Vce(SAT) when

the current pulse is on. If, however, the amplifiers in the oscilloscope saturate, an erroneous measurement of Vgg(gAT) will be made. One

way to avoid this is by application of a clamping circuit at the input

of the oscilloscope. The effect of this circuit is to lower the voltage

during the time the current pulse is off so that it is similar in magnitude to the value of Vqe(SA.T) when the current pulse is on. An oscilloscope can easily follow the new pulse shape without saturating. An ex- ample of such a circuit is shown in Appendix X2 of the method.

A clamping circuit similar to that shown was used in the Vcg(sAT)

measurements described. In order to determine if the addition of the

clamping circuit caused error in the measured value of Vce(SAT) > the cur rent was measured in the 1000-fi resistor. It was found to be less than

1 yA during the time the base current pulse was on and the V^g^g^^ measurement was being made. Therefore, the clamping circuit did not cause

a measurable extraneous voltage drop to occur as part of Vgg(gAT).

SUMMARY

A method for the measurement of Vgg(gAT) has been outlined and discussed. It Was found that the most important factor in the measurement

27
of VCE(SAT) was t ^ie se lection of the forced 3. Precise measurement of

base and collector currents is necessary. Small temperature changes are usually not important. The use of Kelvin connections to eliminate errors

due to extraneous resistances is very important. Short lead lengths on the test transistors and good quality connections and contacts should be

maintained. Good quality circuit components with adequate power rating

should be used.

ACKNOWLEDGMENT

D. L. Blackburn, G. J. Rogers, and T. F. Leedy have provided useful

comments and suggestions in the preparation of this report.

REFERENCES

1. JEDEC Recommendations for Letter Symbols, Abbreviations, Terms, and

Definitions for Semiconductor Device Data Sheets and Specifications,

JEDEC Publication No. 77A, p. Dl (March 1974).

2. Ebers, J. J., and Moll, J. L., Large-Signal Behavior of Junction

Transistors, PPoo. IRE 4^2, 1761-1772 (1954).

28
APPENDIX

METHODS TO MEASURE TRANSISTOR

COLLECTOR-EMITTER SATURATION VOLTAGE

Document No .

Draft No . : 1

Date: June 1, 1977

Prepared by: K. 0. Leedy

(301) 921-3625

29
1 . Scope

1.1 These methods cover tests to determine transistor collectoremitter saturation voltage under specified conditions.

1.2 The d-c method is applicable at currents low enough to produce negligible heating in the junction.

1.3 The pulse method is applicable at high currents which would

cause significant heating in the junction if not pulsed.

1.4 Before this test method can be implemented, test conditions

which are appropriate for the transistor type to be measured must be

selected and agreed upon by the parties to the test. Conditions will

vary from one transistor type to another, and are determined in part by

the intended application of the transistor. The d-c condition chosen

should permit continuous operation of the device under test. The pulsed

method should permit repetitive operation of the device under test. The

following test conditions must be specified:

1.4.1 Choice of either d-c or pulse method,

1.4.2 Permissible range of ambient temperature if other than nominally 20°C,

1.4.3 Collector current I at which the measurement is to be made,

1.4.4 Base current I at which the measurement is to be made, and

B 1.4.5 Pulse duration and duty cycle of current pulse if other than

300 ys and 2%.

2 . Summary of Methods

2.1 The base and collector currents of the transistor under test are each in turn adjusted to be at a specified value. The collectoremitter voltage is then measured.

3 . Significance and Use

3.1 The collector-emitter saturation voltage of a transistor is

a basic parameter of a transistor included in purchase specifications.

The saturation voltage can be used for design purposes to predict the

performance of a transistor used in saturated switching applications,

such as in d-c to a-c power inverters, chopping circuits, and logic circuits as well as other circuits. Differences in before and afCE(SAT)

ter irradiation are a measure of radiation damage in the transistor.

30
4 . Description of Terms

4.1 collector-emitter saturation voltage - of a transistor, the

voltage developed between the collector and emitter when the transistor

is operated in the saturation region.

4.2 saturation region - a base-current and a collector-current

condition resulting in both the emitter-base and the collector-base

junction being forward biased.

5 . Interferences

5.1 During the test, care must be taken to maintain the ambient

temperature within the specified range. Deviations may invalidate test

results.

5.2 Care must be taken in the selection of I and I for the

C B test to assure that the transistor is operating in the saturation region.

Generally, when in saturation the ratio I to I is less than one tenth

C B

the gain of the transistor in the active region for the same base current. If a suitable ratio is not maintained, the test results may be

invalid. A method for determining if a transistor is in saturation is

given in Appendix XI.

d-c Method

6. Apparatus

6.1 Transistor Test Fixture - fixture to attach the transistor

to be tested to the test circuit. Contacts shall be clean and of good

quality. Kelvin connections shall be made to the collector and emitter

leads. Electrical contact of the voltage measuring leads to collector

and emitter leads shall be made to the transistor leads within 3 mm of

the transistor case.

6.2 Voltmeter - voltmeter with an input impedance greater

V

CE(SAT)

than 100 capable of measuring d-c voltage in the range of the

x c anticipated V

CE ( SAT ) with a full scale accuracy of ±0.5% or better.

6.3

Ammeter A^ - d-c ammeter capable of measuring current in the

range of the specified base current with a full scale accuracy of ±0.5%

or better.

31
6.4 Ammeter - ammeter capable of measuring current in the

range of the specified collector current with a full scale accuracy of

±0.5% or better.

6.5 Voltage Sources - d-c voltage sources (sources 1 and 2, Fig.

1) meeting the following specifications:

6.5.1 Stable to within ±0.25% of the set voltage,

6.5.2 Noise and ripple less than 0.5% of the output voltage, and

6.5.3 Adjustable over a nominal range of zero to 30 volts.

6.6 Resistors - resistors (R^ and R^) which meet the following

requirements

20

6.6.1

R^ shall have a resistance of approximately R^ = ft where

B

I is the specified base current in amperes. The resistance shall be

B

known to within 1%. It shall be capable of dissipating at least I^ 2 R^

watts. It shall have a temperature coefficient of resistance less than

0.1%/°C.

20

6.6.2

R shall have a resistance of approximately R = —— ft where

C C I c

I is the specified collector current in amperes. The resistance shall

L» be known to within 1%. It shall be capable of dissipating at least

I

2 R watts. It shall have a temperature coefficient of resistance less

than 0.1%/°C.

6.7

Temperature Measuring Instrument - instrument to measure the

ambient temperature with an accuracy of ±2% in the range of the specified ambient temperature.

7 . Sampling

This method determines the properties of a single specimen. If

sampling procedures are used to select devices for test, they must be

agreed upon in advance by the parties to the test.

8 . Procedure

8.1 Assemble the circuit shown in Fig. 1.

8.2 Set both voltage sources at zero volts and insert transistor

to be tested into transistor test fixture.

8.3 Measure and record the ambient temperature in the vicinity

of the test fixture.

32
33

Figure

1.

Test

circuit

for

use

with

the

d-c

method.
8.4 Adjust voltage source 1 until the base current equals the

specified value as measured on ammeter A^.

8.5 Adjust voltage source 2 until the collector current equals

the specified value as measured on ammeter A^

8.6 Check ammeter A^ to see if it still reads the specified

value and, if not, readjust voltage source 1 to obtain the specified

value

.

8.7 Check ammeter A^ to see if it still reads the specified

value and, if not, readjust voltage source 2 to obtain the specified

value

.

8.8 Repeat 8.6 and 8.7 until no further readjustments are re- quired

.

8.9

V

CE(SAT)

Measure and record the voltage on voltmeter V^. This is

Pulse Method

9 . Apparatus

9.1 In addition to items 6.1, 6.b, 6.7 and voltage source 2 described in 6.5, the following apparatus is required.

9.1.1 Pulsed Voltage Source - Pulsed voltage source which meets

the following requirements:

9. 1.1.1 Adjustable output which is sufficient to provide I reD

quired

,

9. 1.1. 2 Polarity selectable as either positive or negative,

9. 1.1. 3 Rise and fall times of less than 0.1 times the pulse width

used

,

9. 1.1. 4 Droop of less than 5%, and

9. 1.1. 5 Capable of producing the pulse width of 300 ys with a duty

cycle of 2% or other pulse width and duty cycle if specified.

9.1.2 Current Measuring Equipment - equipment for measuring base

current and collector current described in 9. 1.2.1 and 9. 1.2. 2 or

9. 1.2. 3.

9. 1.2.1 Current probe and an amplifier which used together meet

the following requirements:

9. 1.2. 1.1 Rise time less than or equal to 0.1 times the pulse

width used,

34
9. 1.2. 1.2 Accuracy ±3% or better,

9. 1.2. 1.3 Sensitivity of 0.1 V/A or better,

9.1. 2.1.4 Core saturation rating exceeding the product of the current to be measured and its pulse width, and

9. 1.2. 1.5 Low-frequency response such that a square pulse of the

width used in the test results in a negative tilt of less than 3% in the

pulse interval.

9. 1.2.

2

Oscilloscope 1 - general-purpose laboratory oscilloscope

meeting the following specification:

9. 1.2. 2.1 Bandwidth of d-c to 10 MHz minimum,

9. 1.2. 2. 2 Input resistance greater than or equal to 100 times the

resistance across which it is measuring,

9. 1.2. 2. 3 Deflection factors covering at least the range from

5 mV/div to 1 V/div.

9. 1.2. 3 Oscilloscope 2 - general-purpose laboratory oscilloscope

as described in 9. 1.2. 2 with the following additional requirements:

9. 1.2. 3.1 Capability of differential measurements with both inputs

isolated from test circuit common, and

9. 1.2. 3. 2 Common mode rejection ratio of 20 dB minimum.

9.1.3 Voltage Measuring Means - instrument for measuring and displaying the voltage waveform of nominally square pulses having the specified pulse width and duty cycle (see 9. 1.1. 5) and with a voltage range

of zero to 20 V.

10 . Sampling

10.1 This method determines the properties of a single specimen.

If sampling procedures are used to select devices for test, they must be

agreed upon in advance by the parties to the test.

11. Procedure

11.1 With voltage source 2 set at zero volts, assemble the circuit shown in Fig. 2. Set the pulsed voltage source to have a pulse

width of 300 ps and a duty cycle of 2% unless otherwise specified.

11.2 Insert transistor to be tested into transistor test fixture.

11.3 Measure and record the ambient temperature in the vicinity

of the test fixture.

11.4 Set the base and collector currents equal to the specified

35
36

Figure

2.

Test

circuit

for

use

with

the

pulsed

method.
values using either 11.4.1 or 11.4.2.

11.4.1 Use a current transformer to set the base and collector cur- rents as follows:

11.4.1.1 Attach the current probe and amplifier combination to os- cilloscope 1 and position the current probe to monitor the current in R . 11.4.1.2 Adjust the pulsed voltage source to obtain the specified

I B

* 11.4.1.3 Position the current probe to monitor the current in R . 11.4.1.4 Adjust the voltage source 2 to obtain the specified I . 11.4.1.5 Remeasure the current in Rg . If other than specified 1^,

readjust the pulsed voltage source to obtain specified I . B 11.4.1.6 Remeasure the current in R . If other than specified I , readjust voltage source 2 to obtain specified I . 11.4.1.7 Repeat 11.4.1.5 and 11.4.1.6 until no further readjustment

is necessary.

11.4.2

Use oscilloscope 2 to set the base and collector currents

as follows:

11.4.2.1 Calculate and record V = I R where I is the required

B B B B

base current.

11.4.2.2 Adjust the pulsed voltage source to obtain the required

V-r, as measured with oscilloscope 2 connected differentially across points

B

1 and 2

.

11.4.2.3 Calculate and record = I C

R

C where I c is the required

collector current.

11.4.2.4 Adjust voltage source 2 to obtain the required V as measured with oscilloscope 2 connected differentially across points 3 and 4.

11.4.2.5 Remeasure the voltage across points 1 and 2. If this is

other than V , readjust the pulsed voltage source to obtain V . 11.4.2.6 Remeasure the voltage across points 3 and 4. If this is

other than V^, readjust voltage source 2 to obtain V^.

11.4.2.7 Repeat 11.4.2.5 and 11.4.2.6 until no further readjustment

is necessary.

11.5 With the voltage measuring means described in 9.1.3 con- nected across points 5 and 6, observe the voltage waveform which is similar to that shown in Fig. 3. Measure and record the voltage difference,

37
GO

38

Figure

3.

Voltage

waveform

as

observed

with

an

oscilloscope

in

the

pulsed

method.
V, indicated as V

CE ( SAT ) the figure.

Note 1 - Since the voltage difference to be measured is small com- pared to the pulse height, some difficulty may be encountered in making

the measurement of depending on the detailed performance characteristics of the equipment used. Appendix X2 describes a clamping cir

cuit which lowers the V pulse height and details a procedure found sat

isfactory for its use.

12. Report

12.1 The report for d-c Method shall contain the following:

12.1.1 Name of person performing the test,

12.1.2 Date of the test,

12.1.3 Device type and identification of the transistor tested,

12.1.4 Ambient temperature,

12.1.5 Resistance of resistors R and R , D L

12.1.6 Base and collector currents used in the test, and,

12.1.7 Measured value of the collector-emitter saturation voltage.

12.2 The report for Pulse Method shall contain the following in

addition to items 12.1.1 to 12.1.7:

12.2.1 Pulse width, ys, and duty cycle, percent, and

12.2.2 Measured values of V and V . D L. 13 . Precision

No interlaboratory precision data is available at this time.

39
APPENDIX XI

XI. 1 In some applications it is the intention to measure the transistor

collector-emitter voltage for a given bias regardless of whether the

transistor is operating in the saturation region or not. However, if a measurement of the actual is required, one technique that may

be used to assure that, with the specified values of I and I , the tranD G

sistor is operating in the saturation region is to first measure V . N as indicated. Then repeat the measurement with a base current equal to

21^. If the measured value of changes by more than 25%, the

transistor was not in saturation. In order to determine values of I and

D

1^ such that the transistor is operating in the saturation region, it is

necessary to plot V as a function of I /I with I or I fixed. SuitGE G d d G

able current values can then be chosen by looking for the flat portion of

this curve.

40
APPENDIX X2

X2.1 One technique that may be used to assist in measuring V , . GL v LAr ) (see Note 1) is the use of a clamping circuit shown connected to the measuring circuit in Fig. X2.1. This clamping circuit acts to maintain the

voltage across near the anticipated level of the V

CE ( SAT ) of the transistor under test. When the base-current pulse occurs, transistor

turns on which then turns off transistor C^. The resistor values shown

are nominal. Transistors and can be any transistors whose

is in the range of the of the translator to be tested. It is

convenient to use transistors of the same type as is being tested. With

the clamping circuit connected as shown in Fig. X2.1, use the oscilloscope to measure

^ SAT ) anc^ recor<^ the measured value.

41
42

Figure

X2.1.

Measuring

circuit

with

clamping

circuit

attached.
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Hb.,-. L* (REV. 7-73)

U.S. DEPT. OF COMM.

BIBLIOGRAPHIC DATA

SHEET

1. PUBLICATION OR REPORT NO.

NBSIR 77-1231

2. Gov’t Accession

No.

1. title and subtitle

Measurement of Transistor Collector-Emitter Saturation

Voltage

3. Recipient’s Accession No.

5. Publication Date June 1977

6. Performing Organization Code

7. AUTHOR(S)

Kathryn Leedy

8 . Performing Organ. Report No. NBSIR-1231

9. PERFORMING ORGANIZATION NAME AND ADDRESS

NATIONAL BUREAU OF STANDARDS

DEPARTMENT OF COMMERCE

WASHINGTON, D.C. 20234

10. Project/Task/Work Unit No. Z99QAXTD072 W.U.66

11. Contract/Grant No. DNA IACRO 77-809

12. Sponsoring Organization Name and Complete Address (Street, City, State, ZIP)

Defense Nuclear Agency

Washington, DC 20305

13. Type of Report & Period

Covered _ . , Final

July 1976 to Jan. 1977

14. Sponsoring Agency Code

15. SUPPLEMENTARY NOTES

16. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bibliography or literature survey, mention it here.)

This report presents a detailed method for the measurement of collector-emitter

saturation voltage. The method which is included in the Appendix is proposed for

standardization. The report also contains a description of the laboratory confirmation of the method and a discussion of the precautions to be taken to assure re- peatability of the measurement. Emphasized is the necessity to determine that the

conditions for saturation are met during the measurement.

17. KEY WORDS (six to twelve entries; alphabetical order; capitalize only the first letter of the first key word unless a proper name; separated by semicolons

)

18. AVAILABILITY [~y1 Unlimited

For Official Distribution. Do Not Release to NTIS

| Order From Sup. of Doc., U.S. Government Printing Office Washington, D.C. 20402, SD Cat. No. Cl 3 K j Order From National Technical Information Service (NTIS)

Springfield, Virginia 22151

19. SECURITY CLASS 21. NO. OF PAGES

(THIS REPORT)

54

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20. SECURITY CLASS 22. Price

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