Survey of FY 2001 Nanotechnology

Related Research at the National

Institute of Standards and Technology

Edited by: 

Chad R. Snyder

J. Patrick Looney

Michael P. Casassa

U.S. DEPARTMENT OF COMMERCE

Technology Administration

National Institute of Standards

 and Technology

Gaithersburg, MD 20899

NISTIR 6864
NISTIR6864

U.S.DepartmentofCommerce

DonaldL.Evans,Secretary

TechnologyAdministration

PhillipJ.Bond,UnderSecretaryforTechnology

NationalInstituteofStandardsandTechnology

ArdenL.Bement,Jr.,Director

SurveyofFY2001NanotechnologyRelatedResearchattheNational

InstituteofStandardsandTechnology

ChadR.Snyder

J.PatrickLooney

MichaelP.Casassa

(editors)

OfficeoftheDirector

February2002

iii

TABLEOFCONTENTS

INTRODUCTION

TheU.S.GovernmentandNanotechnology .........................................................................................................v

NISTandNanotechnology ..................................................................................................................................vi

AdditionalRemarks...........................................................................................................................................viii

ELECTRONICSANDELECTRICALENGINEERINGLABORATORY(EEEL)

ThinFilmProcessMetrology ...............................................................................................................................1

SingleMoleculeManipulationandMeasurement.................................................................................................2

AdvancedGateDielectricReliabilityMetrology..................................................................................................3

ScanningProbeMicroscopeMetrology................................................................................................................4

LinewidthandOverlayStandardsforNanometerMetrology...............................................................................5

NanostructureFabricationandMetrology............................................................................................................6

SemiconductorNanostructureArrays...................................................................................................................7

SemiconductorNanoscaleImagingandAnalysis.................................................................................................8

NanoscopicNonlinearOpticalandSpectroscopicMetrologiesinWide-BandgapSemiconductors....................9

NanoscaleQuantumStandards:CapacitanceandCurrentStandardsBasedOnCountingElectrons .................10

NanoscaleQuantumStandards:ArbitraryWaveformGeneratorsforStandards,Communications,andRadar.11

NanoscaleQuantumStandards:RadiometryStandardBasedonCountingPhotons ..........................................12

NanoscaleQuantumStandards:QuantumTimeStandardsandComputing(Fabrication)..................................13

X-rayMicroanalysisofNanometerScaleParticlesandFilms............................................................................14

ElectricalMeasurementsofSingleMolecularRotors.........................................................................................15

RectificationofLightasanElectricalPowerSource..........................................................................................16

Nanomagnetodynamics:MaterialsMetrologyforDataStorage.........................................................................17

SingleMoleculeManipulationandMeasurement(SM3

)....................................................................................18

CoherentSpinElectronicsforMicrowaveandTerahertzCommunicationandSignalProcessing.....................19

NanoprobeImaging ............................................................................................................................................20

EmergingApplicationsofNanoscaleMagnetoresistiveSensors:Forensics,Non-destructiveFailureAnalysis,

Surveillance,BiologicalMonitoring...................................................................................................................21

MANUFACTURINGENGINEERINGLABORATORY(MEL)

Atom-scaleLengthMeasurement,StandardsFabrication,andNanomanufacturing...........................................22

OpticalManipulationforTestingandAssemblyofMicro/NanoscaleDevices..................................................23

ScanningElectronMicroscope(SEM)LengthMetrologyofNanometerStructures..........................................24

OpticalOverlayandLinewidthMeasurementMethodsandNanometer-scaleStandards ..................................25

ScannedProbeMicroscopeDimensionalMetrology..........................................................................................26

FabricationandCharacterizationofNanostructuresforStandards.....................................................................27

Atomic-scaleMotionControlforNanometrologyandNanomanufacturing.......................................................28

ModelingforNanometer-ScaleLengthMetrology.............................................................................................29

MicroforceRealizationandMeasurement..........................................................................................................30

CHEMICALSCIENCEANDTECHNOLOGYLABORATORY(CSTL)

LargeScaleSurfaceMetrologywithSub-NanometerUncertainty.....................................................................31

MolecularElectronics.........................................................................................................................................32

Self-AssembledMonolayers(SAMs)forChemicalandBiochemicalMeasurements........................................33

CombinatorialMethods ......................................................................................................................................34

ChemicalNanoanalysis.......................................................................................................................................35

MolecularScaleCharacterization.......................................................................................................................36

NearfieldMethodsforChemicalAnalysis..........................................................................................................37
iv

PHYSICSLABORATORY(PL)

NanoscalePhysicsResearch...............................................................................................................................38

NanoelectronicsandAutonomousAtomAssembly............................................................................................39

LaserTrappingandCooling...............................................................................................................................40

AtomicRadiationandPlasma.............................................................................................................................41

QuantumInformationCompetence.....................................................................................................................42

BoseCondensationExperiments ........................................................................................................................43

MATERIALSSCIENCEANDENGINEERINGLABORATORY(MSEL)

Nanotribology.....................................................................................................................................................44

ElectromigrationinInterconnects.......................................................................................................................45

AtomicForceAcousticMicroscopy(AFAM) ....................................................................................................46

MechanicalBehaviorofThinFilms ...................................................................................................................47

PackagingReliability..........................................................................................................................................48

BrillouinLightScatteringforThinFilmAnalysis..............................................................................................49

MechanicalPropertiesofThinFilmsusingAcousticWaves .............................................................................50

CharacterizationofPorousLow-kDielectricConstantThinFilms....................................................................51

FluorescentSub-MicronProbeMoleculeswithStarlikeArchitecture................................................................52

FundamentalStudiesfortheDevelopmentofPhotoresistsforNext-generationPhotolithography:ThinFilm

ChainConformationandPolymerDynamics......................................................................................................53

CombinatorialMethodsforPolymerNanocompositeFilmProperties...............................................................54

PolymerNanocomposites ...................................................................................................................................55

GiantMagnetoresistanceMaterials.....................................................................................................................56

MagneticPropertiesofNanostructuredMaterials ..............................................................................................57

MagneticDomainMotioninNanostructuredMaterials .....................................................................................58

NanoscaleMagneticSRMsandCharacterizationTechniques............................................................................59

MagneticDynamicsandMicromagneticsofThinFilm......................................................................................60

NeutronMethodsforNanotechnology ...............................................................................................................61

NeutronStudiesofNanoscaleFilmsandMultilayers.........................................................................................62

NeutronScatteringInvestigationsofNanocomposites,NanotubesandSelfAssembledStructures...................63

BUILDINGANDFIRERESEARCHLABORATORY(BFRL)

CharacterizationofPolymerSurfaces.................................................................................................................64

High-PerformancePolymericBuildingMaterials:Polymer-MetalOxideNanocompositeSystems ..................65

MeasurementScienceforOpticalReflectanceScattering ..................................................................................66

NewFlameRetardantPrinciples: .......................................................................................................................67

ParticleMeasurementsinSupportoftheSemiconductorIndustry.....................................................................68

ANISTKineticDataBaseforPAHReactionsandSootParticleInceptionDuringCombustion......................69

References................................................................................................................................... 70
v

INTRODUCTION

TheU.S.GovernmentandNanotechnology

Nanotechnologyholdspromisetodramaticallychangemanyaspectsoftheworldinwhichwe

live.Therangeandscopeofthepotentialeconomicandsocietalbenefitsfromnanotechnologies

issostaggeringithasbeencalledthe“NextIndustrialRevolution”.[1]Recognizingthelarge

potentialfornanotechnologies,theFY2001FederalBudgetincludedsupportforamajornew

initiativeonnanotechnology.TheNationalNanotechnologyInitiative(NNI)wasestablishedby

theU.S.Governmenttopromotelong-termnanoscaleresearchanddevelopmentleadingto

potentialbreakthroughsinareasrangingfrommaterialsandmanufacturingtobiotechnologyand

agriculturetonationalsecurityandDefense,andmanyothers.TheNNIcreatesaresearch

infrastructurebycoordinatingactivitiessuchasfundamentalresearch,GrandChallenges(which

willbedescribedlater),andcentersandnetworksofexcellence,activitiesthatareallpotentially

highpayoffandbroadlyenabling.TheNNIevolvedfrompublicationsauthoredbythe

InteragencyWorkingGrouponNanoscience,EngineeringandTechnology(IWGN),[2]andis

currentlysupportedandmonitoredbytheIWGN'ssuccessor,theSubcommitteeonNanoscale

Science,Engineering,andTechnology(NSET).[3]InFY2001,thetotalinvestmentbytheNSET

agenciesinnanotechnologywasestimatedtobe$422million,ofwhichNISThasinvested

approximately$13.5million.

TheNNIexemplifiesthegovernment'scriticalroleinpromotingthedevelopmentofnewscience

andtechnology.Forclarity'ssake,weshouldfirstconsiderwhattypesofthingswedefineas

nanotechnology.Askanyscientist,engineer,orlaypersonforadefinitionofnanotechnology,and

youwillmostlikelyreceiveaverydifferentanswer.Inmanycases,itisconsideredhardto

define;likegoodart,mostpeople"knowitwhentheyseeit"buthavedifficultyexplainingitin

general.Thus,weusethedefinitionofnanotechnologygivenbytheNSET:

Nanotechnologyisdefinedastheabilitytoworkattheatomic,molecularor

macromolecularlevels,inthelengthscaleofapproximately1-100nmrange,inorder

tocreate,manipulateandusestructures,devicesandsystemsthathavenovel

propertiesandfunctionsbecauseofthesmallsize.Thenovelanddifferentiating

propertiesandfunctionsaredevelopedatacriticallengthscaleofmattertypically

under100nm.Nanotechnologyincludesintegrationofnanoscalestructuresinto

largermaterialcomponents,systemsandarchitecturesthatareusedinmost

industries,healthcaresystems,environmentandnationalsecurity.Withintheselarger

scaledevices,thecontrolandconstructionofthedevicesremainsatthenanoscale.In

someparticularcases,thecriticallengthscalefornovelpropertiesandphenomena

maybeunder1nm(e.g.,manipulationofatomsat~0.1nm)orbelargerthan100nm

(e.g.,nanoparticlereinforcedpolymershavetheuniquefeatureat~200-300nmasa

functionofthelocalbridgesorbondsbetweenthenanoparticlesandthepolymer).[3]

ItiscriticalthattheFederalgovernmentisinvolvedatthisstageinthedevelopmentof

nanotechnology,since"thenecessaryfundamentalnanotechnologyresearchanddevelopmentis

toobroad,complex,expensive,long-term,andriskyforindustrytoundertake."[3] Industryis

unabletofundorisunder-fundingcriticalareasoflong-termfundamentalresearchand
vi

developmentandisnotdevelopingthenecessarynanoscienceinfratechnologiesneededtorealize

nanotechnology’spotential.

InsupportingtheNNI,theparticipatingagenciesfundtheNNIrecommendedR&Dprioritiesasa

functionoftheirmission,contingentonavailableresources.ThestatedgoalsoftheNSET

involvedevelopinga...

...coherentapproachforfundingthecriticalareasofnanoscienceandengineering,

establishingabalancedandflexibleinfrastructure,educatingandtrainingthe

necessaryworkforce,andpromotingpartnershipstoensurethatthesecollective

researchactivitiesprovideasoundandbalancednationalresearchportfolio.By

facilitatingcoordinationandcollaborationamongagencies,theNNIwillmaximize

theproductivityandutilityoftheFederalgovernment’sinvestmentinnanotechnology

andavoidunnecessaryduplicationofefforts.[3]

NISTandNanotechnology

ThisreportcatalogstheeffortsoftheNationalInstituteofStandardsandTechnology(NIST)in

nanotechnologyduringFY2001.Thepurposeofthisreportistoprovideasnapshotofcurrent

effortsinnanotechnologyatNISTandindoingsoallowonetoviewtheroleofNISTresearchin

contextofthetotalfederalresearchnanotechnologyeffortandtounderstandNISTactivitiesin

thecontextofexpecteddemandsandstrategicthrusts.ThereasonforNIST’sbroadinterestin

nanotechnologyandparticipationintheNNIcanbereadilyunderstoodintermsofNIST'slong

standingpresenceinthemeasurementsandstandardsarenaandinNIST'sroleinpromotinghighrisktechnologyresearchinindustry.

Toensurethecommercialviabilityofnanotechnology-relatedproducts,nanoscalemeasurements

anddatawillbecomecriticaltobothprocesscontrolandqualitycontrol.Additionally,

measurementsanddataarealsocriticaltodevelopingacompleteunderstandingofnew

phenomena.Forthesemethodstosucceed,severalthingsneedtobedevelopedwhichcanbe

groupedundertheheadings:metrologyandinfrastructure.Formetrology,newapproachesto

analyticaltoolsneedtobedevelopedandimprovementsmustbemadeinthephysical

understandingofcurrentinstruments.Issuesthatariseinthiscategoryinvolvetheuncertaintyin

interpretingmeasurementsonmolecularmaterialsandtheproductionofartifactsduetothe

measurementtechniquesthemselves.Underthecategoryofinfrastructure,newmeasurements,

standards,anddata,areneededtobridgethegapbetweenfundamentalnanoscalescience,

engineering,andtechnologydiscoveriesintonewcommercialproductsandservicesandtomeet

traceabilityrequirementsthatmayariseforinternationaltrade.

NIST’smissionformeasurementsandstandardsforindustryandotherscientificinterestsgoes

backtoitsformationin1901bytheOrganicAct(PublicLaw177-56Congress).NIST's

LaboratoriesmaintaintheU.S.nationalstandardsforallfundamentalmeasurements,including

length,time,mass,electriccurrent,temperature,etc.,andfordozensofderivedmeasurements.It

isthereforenotsurprisingthatNISTshouldplayakeyroleinenablingadvancesinnanoscale

science,engineering,andtechnologyatalllevels.NISTisthereforetakingtheinitiativeto
vii

guaranteetheaccuracyandprecisionofnanoscalecharacterizationequipmentthroughscientific

development(metrology),standards,andcalibrationsources.

NIST'sroleinnanotechnologyisnotlimitedtotheresearchinitslaboratories.NIST'sAdvanced

TechnologyProgram(ATP),hasfundedaseriesofnanotechnology-relatedprojectsinlinewith

itmissiontoacceleratethedevelopmentofinnovativetechnologiesforbroadnationalbenefit

throughpartnershipswiththeprivatesector.TheATPco-fundshigh-riskresearchprograms

proposedandcarriedoutbyindustry.Theseactivitiesarecatalogedinthisreportaswell.

ToplacetheNISTeffortsinthecontextofthelargereffortsofnanotechnologieswithintheUS,

wehaveaddedamatrixaftereachproject/programlistedinthisreport.Thematrixisusedto

identifywhichofthe“GrandChallenges”ofnanotechnology,asdefinedbyNSET[3,4],thata

particularprojectorprogramaddresses.

Currently,thesetofGrandChallengesofNanotechnology,asdefinedbyNSET,is:

GrandChallenge Symbol

nanostructuredmaterials"bydesign" MAT

nanoelectronics,optoelectronicsandmagnetics ELEC

advancedhealthcare,therapeuticsanddiagnostics HEALTH

nanoscaleprocessesforenvironmentalimprovement ENV

efficientenergyconversionandstorage ENER

microspacecraftexplorationandindustrialization SPACE

bio-nanosensorsforcommunicablediseaseandbiologicalthreatdetection BIOSEN

economicalandsafetransportation TRANS

nationalsecurity SECUR

nanoscaleexperimentaltools MET

manufacturingatthenanoscale MAN

Heretheentriesinthe“Symbol”columnareabbreviationsusedtohelpmapNISTcurrent

programsontotheNSETGrandChallengesandareusedinthematrixaftereach

project/program,i.e.,

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

       

Bylookingatthematrixaftereachoftheprogramwrite-upstherelationofeachoftheNIST

programstotheNSETGrandChallengescanbereadilyunderstood.
viii

AdditionalRemarks

Theeditorsofthisreportassembledthissurvey,nottobecomprehensive,buttogiveaflavorof

thebreadthofongoingeffortsatNISTinthenanotechnologyarena.Thereareundoubtedly

effortsatNISTthatcouldbeassociatedwithnanotechnology,orwillbenefitnanotechnologyin

someway,whichhavenotbeenlistedinthisreport.

Theeditorswouldliketothankeveryonewhoprovidedtheinformationcontainedinthisreport

andhopethattheinformationcontainedwithinwillbeusefultothereader.

 ChadR.Snyder

 J.PatrickLooney

 MichaelP.Casassa

NISTRepresentativestotheNSET

February2002
ElectronicsandElectricalEngineeringLaboratory

 1

ThinFilmProcessMetrology

ProjectLeader/contact:

 JamesEhrstein,301-975-2060,j.ehrstein@nist.gov

SemiconductorElectronicsDivision,EEEL,Gaithersburg

Approximatestaffing:

 5FTE

Fundingsources

NIST(100%)

Objective:

Developimprovementsinopticalandelectricalmeasurementsnecessaryforaccuratecharacterizationand

processcontrolofcriticaldielectricthinfilmsforsemiconductortechnology,particularadvancedgate

dielectricfilms.

Constituency:

Semiconductorelectronicsindustry

Principalcurrenttasks:

• Developimprovedfilmthicknessmetrologyforthemanufacturingenvironment

• Developbetterunderstandingofthephysicsandfunctionalmodelsforoptical-,electrical-andphysical-

thicknessmodels

• Developdatabasesforthedielectricfunctionsofadvancedmetal-oxideandmetal-silicatefilms

• Developmeansforrapididentificationofprocess-inducedchangesinfilmcompositionorstructure

• DevelopmechanismsforthetraceabilityofthinfilmmeasurementsbyindustrytoNIST.

Additionalinformation:

Thesefilmsaretypicallyonlyseveralnanometersthick.Theworkfocusesondeveloping;a)improvedfilm

thicknessmetrologyforthemanufacturingenvironment,b)betterunderstandingofthephysicsandfunctionalmodels

foroptical-,electrical-andphysical-thicknessmodels,c)databasesforthedielectricfunctionsofadvancedmetaloxideandmetal-silicatefilms,andd)meansforrapididentificationofprocess-inducedchangesinfilmcomposition

orstructure.Finally,weseektodevelopmechanismsforthetraceabilityofthinfilmmeasurementsbyindustryto

NIST.

Selectedpublications:

1. Diebold,A.,Canterbury,J.,Chism,W.,Richter,C.A.,Nguyen,N.V.,Ehrstein,J.R.,andWeintraub,C.,

CharacterizationandProductionMetrologyofGateDielectricFilms:OpticalModelsforOxynitridesandHigh

DielectricConstantFilms,MaterialsScienceinSemiconductorProcessing,vol.4.,pp.3-8,2001.

2. Richter,C.A.,Nguyen,N.V.,Gusev,E.P.,Zabel,T.H.,andAlers,G.B.,OpticalandElectricalThickness

MeasurementsofAlternateGateDielectrics:aFundamentalDifference,CharacterizationandMetrologyfor

ULSITechnology:2000,D.G.Seiler,A.C.Diebold,T.J.Shaffner,R.McDonald,W.M.Bullis,P.J.Smith,

andE.M.Secula,Eds.(AIP,NewYork,2001),pp.134-139.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

X X        X X
ElectronicsandElectricalEngineeringLaboratory

 2

SingleMoleculeManipulationandMeasurement

ProjectLeader/contact:

 MichaelGaitan,301-975-2070,michael.gaitan@nist.gov

SemiconductorElectronicsDivision,EEEL,Gaithersburg

Approximatestaffing:

 3FTE

Fundingsources

NIST

Objective:

Theobjectiveistodevelopsingle-moleculetechnologiestoaddresssignificantinaccuraciesinthebase-pair

orderinginferredbypresentgene-sequencingtools,affectingsuchwell-publicizedeffortsastheHuman

GenomeProject.

Constituency:

Biotechnologyindustries

Principalcurrenttasks:

• Developmeasurementmethodsforstructuralpropertiesofdeoxyribonucleicacid(DNA)usingpores

• Developtheabilitytointerpretfluorescenceresonanceenergytransfer(FRET)dataunambiguouslyon

singlemoleculesandmethodstomeasurethestructureanddynamicsofribonucleicacid(RNA)standards

andhairpinsystems

• Developtheabilitytomeasuresinglemoleculesspectroscopically,usingsurfaceenhancedRaman

spectroscopy(SERS)andoptically,usingtwo-photonandUVexcitationwithsimultaneousforce

measurements

• Developfabricationmethodsfornanometer-scaleelementsandfluidicsystemsthatwilltransportsingle

molecules

Additionalinformation:

ThisispartofaNIST-widemulti-LaboratoryeffortincludingCSTL,PL,andITLinadditiontoEEEL.The

objectiveistodevelopsingle-moleculetechnologiestoaddresssignificantinaccuraciesinthebase-pairordering

inferredbypresentgene-sequencingtools,affectingsuchwell-publicizedeffortsastheHumanGenomeProject.

Theprogramwillensuretheintegrityofsuchbio-informaticdatabasesthroughthedevelopmentandutilizationofa

high-throughput,singlemoleculemanipulationandmeasurement(SM3

)platformtodirectlymanipulateandmeasure

thestructureanddynamicsofsingleRNAorDNAmolecules.Withinthefive-yeartimespanofthiseffort,the

followingwillbedeveloped:Aplatformwillbeproducedthatwillcombinethesecapabilitiestomakeasingle

biomoleculemeasurementworkbench.

Selectedpublications:

1. Herman,D.,Gaitan,M.,andDeVoe,D.,MEMSTestStructuresforMechanicalCharacterizationofVLSIThin

Films,Proc.SEMConference,Portland,Oregon,Jun.4-6,2001,5p.

2. Rasmussen,A.,Gaitan,M.,Locascio,L.,andZaghloul,M.,FabricationTechniquestoRealizeCMOScompatibleMicrofluidicMicrochannels,JMEMS,10:(2)286-297,June2001.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

  X       X 
ElectronicsandElectricalEngineeringLaboratory

 3

AdvancedGateDielectricReliabilityMetrology

ProjectLeader/contact:

 JohnS.Suehle,301-975-2247,john.suehle@nist.gov

 SemiconductorElectronicsDivision,EEEL,Gaithersburg

Approximatestaffing:

 3FTE

Fundingsources

NIST(100%)

Objective:

Theobjectivesofthisresearcharetodevelopmeasurementmethodsfordeterminingthereliabilityofultrathin

gatedielectricmaterials,includingSiO2andcandidatehigh-kmaterials.Thesemeasurementmethodsandthe

understandingdevelopedaboutthereliabilityofgatedielectricsaretransferredtothesemiconductorindustry

throughvoluntarystandardsgroups,collaborations,andpublications.

Constituency:

Semiconductorelectronicsindustry

Principalcurrenttasks:

• Developmeasurementmethodsfordeterminingthereliabilityofultrathingatedielectricmaterials

Additionalinformation:

Developingandmanufacturingscaled,ultrathingatedielectricsforfuturemicroelectronicdevicesisregardedasone

ofthemostdifficultchallengesbytheSemiconductorIndustryAssociation(SIA)InternationalTechnologyRoadmap

forSemiconductors(ITRS).Asthesemiconductorindustryscalesdevicechannellengthstobelow180nm,gate

dielectricsmustbescaledtohaveanequivalentoxidethicknessbelow2nm.Ultra-thinSiO2(thegatedielectricthat

isusedinpresentdevices)exhibitslargetunnelingcurrentsandtheimpactondevicereliabilityisnotwell

understood.Analternative,high-dielectricconstant(highk)gatedielectricsystemwillberequiredasdevicesare

scaledfurtherduetotheexcessivetunnelingcurrentsexhibitedbysub-2nmSiO2.Theobjectivesofthisresearchare

todevelopmeasurementmethodsfordeterminingthereliabilityofultrathingatedielectricmaterials,includingSiO2

andcandidatehigh-kmaterials.Thesemeasurementmethodsandtheunderstandingdevelopedaboutthereliabilityof

gatedielectricsaretransferredtothesemiconductorindustrythroughvoluntarystandardsgroups,collaborations,and

publications.

Selectedpublications:

1. Vogel,E.M.,andMisra,V.,MOSDeviceCharacterization,inHandbookofSiliconSemiconductors

Metrology,A.C.Diebold,Ed.(MarcelDekker,Inc.,NewYork-Basel,2001),pp.59-95.

2. Vogel,E.M.,Edelstein,M.D.,andSuehle,J.S.,DefectGenerationandBreakdownofUltra-ThinSilicon

DioxideInducedbySubstrateHotHoleInjection,JournalofAppliedPhysics,vol.90,no.5,Sept.1,2001,pp.

2338-2347.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

 X        X 
ElectronicsandElectricalEngineeringLaboratory

 4

ScanningProbeMicroscopeMetrology

ProjectLeader/contact:

 JosephKopanski,301-975-2089,joseph.kopanski@nist.gov

 SemiconductorElectronicsDivision,EEEL,Gaithersburg

Approximatestaffing:

 4FTE

Fundingsources

NIST(100%)

Objective:

Providesiliconandcompoundsemiconductormanufacturerswithadvancedscanning-probeelectrical

metrologytechniquesandmodelstoimprovedeviceperformanceandreliability.

Constituency:

Semiconductorelectronicsindustry

Principalcurrenttasks:

• Providethetechnologycomputer-aideddesign(TCAD)communitywithquantitativetwo-dimensional

dopantprofilestocalibrateandenhancethepredictivityofprocesssimulators

• Developmetrologytechniquesanddatainterpretationmodelsforthescanningcapacitancemicroscope

(SCM)

Additionalinformation:

Becausescanningprobemicroscopescanmakemeasurementswithlessthanonenanometerspatialresolution,

theyareoneofaveryfewtechniqueswhichcanactuallyprobewithintheinternalstructureofstate-of-the-art

transistors.Thegoalofthisprojectistoprovidesiliconandcompoundsemiconductormanufacturerswith

advancedscanning-probeelectricalmetrologytechniquesandmodelstoimprovedeviceperformanceand

reliability.

Selectedpublications:

1. Marchiando,J.F.,Kopanski,J.J.,andAlbers,J.,LimitationsoftheCalibrationCurveMethodforDetermining

DopantProfilesfromScanningCapacitanceMicroscopeMeasurements,J.Vac.Sci.Technol.B18(1),

Jan/Feb2000,pp.414-417.

2. Kopanski,J.J.,Marchiando,J.F.,andRennex,B.G.,ScanningCapacitanceMicroscopyforMeasuring

DeviceCarrierProfilesBeyondthe100nmGeneration,DigestofPapersofthe2000International

MicroprocessesandNanotechnologyConference,atTheUniversityofTokyo,Tokyo,Japan,July11-13,2000,

pp.250-251.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

 X        X 
ElectronicsandElectricalEngineeringLaboratory

 5

LinewidthandOverlayStandardsforNanometerMetrology

ProjectLeader/contact

 MichaelW.Cresswell,301-975-2072,michael.cresswell@nist.gov

 SemiconductorElectronicsDivision,EEEL,Gaithersburg

Approximatestaffing:

 5FTE

Fundingsources:

 NIST(100%)

Objective:

Developtest-structure-basedelectricalmetrologymethodsandrelatedreferencematerialswithprimary

emphasisonlinewidthmetrologyandcalibration;contributetostandardsorganizationssupportingthe

developmentofmetrologystandardsforthesemiconductortoolindustry.

Constituency:

Semiconductorelectronicsindustry

Principalcurrenttasks:

• Developprototypecriticaldimension(CD)referencematerialsforcalibratinglinewidthmetrology

instruments

Additionalinformation:

Thetechnicalapproachdevelopedforfabricatingtheprototypelinewidthmaterialsemployspatterningwithlatticeplaneselectiveetchesofthekindusedinsiliconmicromachining.Thisresultsinreferencefeatureswithatomically

planarsidewalls.Siliconwaferscontainingtestchipswiththesefeatureswerethenmeasuredusinglow-cost,but

veryaccurateandreproducible,electricalmeasurements.SincetheaccuracyoftheseelectricalCDmeasurements

wasnotknownapriori,aselectionoffeaturesweremeasuredusingHighResolutionTransmissionElectron

Microscopy(HRTEM)toresolvethesiliconlattice.HRTEMprovidesnanometer-levelaccuracy,butissampledestructiveandisprohibitivelycostlytoimplementforroutineinspection.Thelatticeplanesprovideabuilt-inruler

(theseparationsofthesiliconlatticeplanesareveryaccuratelyknown)thatisusedtocalibratetheelectrical

measurements.Typicalreferencefeaturesareseveral-hundredlatticeplaneswide.Theprototypematerialsthathave

beendeliveredtoISMThavelinewidthsof80nm-140nmandareintendedforusewithadvancedcircuitsthatwill

beintroducedaroundtheyears2003-2005.

Selectedpublications:

1. Cresswell,M.W.,andAllen,R.A.,ElectricalCDMetrologyandRelatedReferenceMaterials,inHandbookof

SiliconSemiconductorsMetrology,A.C.Diebold,Ed.(MarcelDekker,Inc.,NewYork-Basel,2001),pp.

377-409.

2. Cresswell,M.W.,Arora,N.,Allen,R.A.,Murabito,C.E.,Richter,C.A.,Gupta,A.,Linholm,L.W.,Pachura,

D.,andBendix,P.,TestChipforElectricalLinewidthofCopper-InterconnectionFeaturesandRelated

Parameters,Proceedingsofthe2001IEEEInternationalConferenceonMicroelectronicTestStructures,Kobe,

Japan,Mar.19-22,2001,vol.14,pp.183-188.

3. Cresswell,M.W.,Bonevich,J.E.,Allen,R.A.,Guillaume,N.M.P.,Giannuzzi,L.A.,Everist,S.C.,

Murabito,C.E.,Shea,P.J.,andLinholm,L.W.,ElectricalLinewidthTestStructuresPatternedin(100)

Silicon-on-InsulatorforUseasCDStandards,IEEETransactionsonSemiconductorManufacturing,vol.14,

no.4,2001,p9.

AlignmentwithNSETGrandChallenges

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

 X        X 
ElectronicsandElectricalEngineeringLaboratory

 6

NanostructureFabricationandMetrology

ProjectLeader/contact:

 RichMirin,303-497-7955,mirin@boulder.nist.gov

 OptoelectronicsDivision,EEEL,Boulder

Approximatestaffing:

6.2FTE

Fundingsources:

 NIST(100%)

Objective:

Developmeasurementtechnologyandmethodsbasedonepitaxialsemiconductornanostructures.Developnew

techniquestofabricate,characterizeandmodelnanostructures.

Constituency:

Optoelectronicsindustry,nanoscalemetrologyequipmentdevelopers,andmeasurementinstrumentation

manufacturers

Principalcurrenttasks:

• Generatesinglephotonsondemand(singlephotonturnstile)

• Capacitancespectroscopyofensemblesofquantumdotsandindividualquantumdots

• Singlephotondetectorsbasedonquantumdots

• Singlequantumdotabsorptionmeasurements

• Etch2Dand3Dphotoniccrystalsusingchemically-assistedionbeametching

• Modelphotoniccrystals

• Measureandmodelquantumdot,semiconductoropticalamplifiers

• Molecularbeamepitaxyofself-assembledquantumdots

Additionalinformation:

NISTisdevelopingthefabricationandmetrologyofcompoundsemiconductornanostructurestosupportthe

optoelectronicsindustryinthisarea.Controlandmeasurementofthesize,location,andopticalpropertiesof

nanostructuresarefundamentaltotheirapplications.Forexample,theresonantabsorptioncross-sectionsandthe

homogeneouslinewidthsofquantumdotshavenotyetbeenmeasured.Singlephotongenerationanddetectionbased

onsinglequantumdotsisbeingpursued.Theultrafastpropertiesofquantumdotsinawaveguidearebeingstudied

fortherealizationofthenext-generationofopticaldevicessuchaslaserdiodes,photodetectors,andoptical

amplifiers.Photoniccrystalsforcontrolofthesinglephotonsarebeinginvestigated.

Selectedpublications:

1. R.P.Mirin,K.L.Silverman,D.H.Christensen,andA.Roshko,"NarrowPhotoluminescenceLinewidthsFrom

EnsemblesofSelf-AssembledInGaAsQuantumDots",JournalofVacuumScienceandTechnology.B 18(3),

1510-1513(2000).

2. R.P.Mirin,A.C.Gossard,andJ.E.Bowers,"CharacterizationofInGaAsquantumdotlaserswithasingle

quantumdotlayerasanactiveregion",PhysicaE 2(1-4),738-742(1998).

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

X X        X 
ElectronicsandElectricalEngineeringLaboratory

 7

SemiconductorNanostructureArrays

ProjectLeader/contact:

 KrisBertness,303-497-5069,bertness@boulder.nist.gov

 OptoelectronicsDivision,EEEL,Boulder

Approximatestaffing:

0.7FTE

Fundingsources:

 NIST(20%),OtherAgency(80%)

Objective:

Developmethodstogrowandcharacterizequantumdotsonnanopatternedsubstrates.

Constituency:

Optoelectronicsindustry,epitaxialcrystalgrowthindustry

Principalcurrenttasks:

• OptimizesurfacepreparationandcleaningforsiliconandGaPsurfacesthatpreservesubstratenanopatterns.

• DevelopRHEEDassessmentofsurfacepreparationandquantumdotformation.

• Developgrowthproceduresforregulararrayformationonnanopatternedsubstrates.

Additionalinformation:

NISTiscollaboratingthroughacooperativeresearchanddevelopmentagreement(CRADA)withSystine,Inc.,

Pasadena,CA,todevelopmethodsforthefabricationofhigh-quality,high-densityarraysofsemiconductorquantum

dots.Thisresearch,ifsuccessful,willbeapplicabletoamyriadofoptoelectronicapplications,includinginfrared

detectionandvisiblelightdisplays.Thetechnologymakesuseofbiologicallygeneratedpatternsandapatented

low-energyelectron-enhancedetchingtechnique.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

X X        X 
ElectronicsandElectricalEngineeringLaboratory

 8

SemiconductorNanoscaleImagingandAnalysis

ProjectLeader/contact:

• AlexanaRoshko,303-497-5420,roshko@boulder.nist.gov

OptoelectronicsDivision,EEEL,Boulder

• RobertKeller,303-497-7651,keller@boulder.nist.gov

MaterialsReliabilityDivision,MSEL,Boulder

• JohnE.Bonevich,301-975-5428,john.bonevich@nist.gov

MetallurgyDivision,MSEL,Gaithersburg

Approximatestaffing:

 2.9FTE

Fundingsources:

 NIST(100%)

Objective:

Developmethodstoimageandcharacterizecompoundsemiconductorsonananometerlengthscale.

Constituency:

Optoelectronicsindustry.

Principalcurrenttasks:

• Atomicforcemicroscopy(AFM)andtransmissionelectronmicroscopy(TEM)imagingofnanoscale

structures,suchasquantumdotdimensionsanddistributions.

• Developconvergentbeamelectrondiffraction(CBED)imagingandanalysisformeasurementofstrainin

compoundsemiconductors.

• Analyzestrainadjacentthinburiednativeoxidelayers;evaluatemethodsofstrainminimization.

• Determinerelationshipsbetweenstrainandquantumdotmorphology.

Additionalinformation:

Theabilitiestoimagenanoscalefeaturesandtomapstraininnanoscalestructuresarecrucialtooptoelectronic

devicedevelopmentwherestructuresontheorderof2nmto100nmindimensionarecommonplace.AFMand

TEMimagingarebeingusedintandemtomeasurethesize,shapeanddistributionofquantum-scalestructures.This

informationisthencorrelatedwithCBEDmeasurementsofstraininthesematerialstopredictoptimalgrowth

conditionsforobtainingdesiredmorphologies.Currentlyunderinvestigationareself-assembledquantumdotsand

nativeoxidelayersformedbywet-thermaloxidationofAlGaAs.ThenativeoxideworkforVCSELapplicationsis

partofacollaborationwithamajoroptoelectronicsmanufacturerandanationallaboratory.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

X X        X X
ElectronicsandElectricalEngineeringLaboratory

 9

NanoscopicNonlinearOpticalandSpectroscopicMetrologiesinWide-Bandgap

Semiconductors

ProjectLeader/contact:

 NormanA.Sanford,303-497-5239,sanford@boulder.nist.gov

 OptoelectronicsDivision,EEEL,Boulder

Approximatestaffing:

1.8FTE(pluscoordinatedeffortswithMSELandCSTL)

Fundingsources:

 NIST(100%)

Objective:

Developcorrelatednanoscopicnonlinearopticalandspectroscopicmethodstoexaminetheoptical,structural,

andelectronicpropertiesofdefectsinwide-bandgapIII-nitridesemiconductors.

Constituency:

Optoelectronicsindustry,high-powerelectronicsindustry

Principalcurrenttasks:

• Developblue/uv,collection-mode,near-fieldspectroscopywith50nmspatialresolution

• Developcollection-mode,near-field,nonlinearopticsintheblue/uvspectralrange

• InvestigatethestructuralandelectronicpropertiesofdefectsinIII-nitridesemiconductors

• Examinetheelectronicpropertiesofdefectsinthevicinityofohmiccontacts

Additionalinformation:

Thewide-bandgapIII-nitridesemiconductorsareimportantemergingmaterialsforthedevelopmentofsolid-state

lighting,blue/greenlasersforopticaldatastorage,andhigh-power,high-temperatureelectronicdevices.The

potentialmarketrepresentedbyworldwideadoptionofLED-basedsolid-statelightingisprojectedtobe$50billion

dollarsperyearoverthenextfewdecades.Nevertheless,allofthetechnologiesenabledbythewide-bandgapIIInitridesareimpededintheirdevelopmentduetopoorfundamentalunderstandingoftheroleofdefectsintheoptical,

structural,andelectronicpropertiesofthesematerials.Thedevelopmentofnew,correlated,nanoscalemetrologies

thataddresstheseissuesiscriticalforprogressinthematerialsystem.ThiseffortishighlycollaborativewithNIST

staffinMSELandCSTLwhobringexpertiseinx-ray,TEM,SEM,cathodoluminescence,metallurgy,andvarious

analyticalmethods.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

X X        X 
ElectronicsandElectricalEngineeringLaboratory

 10

NanoscaleQuantumStandards:

CapacitanceandCurrentStandardsBasedOnCountingElectrons

ProjectLeader/contact:

• MarkKeller,303-497-430,mark.keller@boulder.nist.gov

ElectromagneticTechnologyDivision,EEEL,Boulder

• NeilZimmerman,301-975-5887,neil.zimmerman@nist.gov

ElectricityDivision,EEEL,Gaithersburg

Approximatestaffing:

 3.5FTE

Fundingsources

NIST(80%),OtherAgencies(20%)

Objective:

Todevelopnewfundamentalstandardsofcapacitanceandcurrentbasedonafundamentalpropertyofnature,

theelectroncharge,byexploitingtheabilityofsingle-electrontunneling(SET)devicestomanipulate

individualelectronsatMHzfrequenciesthroughnanoscaletunneljunctions.

Constituency:

ThisprojectisaimedatprovidingimprovedcapacitancecalibrationservicestoNISTcustomersinindustryand

atofferinganewbasisforstandardsofcapacitanceandcurrenttothecommunityofmetrologistsinterestedin

electricalmetrologyandfundamentalconstantsexperiments.

Principalcurrenttasks:

• ComparetheexistingprototypeelectroncountingcapacitancestandardwithNIST'sestablishedprimary

standardtodeterminethelevelofagreementbetweenthetwo.

• Developacurrentstandardthatdeliversoforder100pAtoenableanexperimentknownasthequantum

metrologytrianglethatwillcontributetoourunderstandingofthethreeexistingquantumelectrical

standardsforcurrent,voltage,andresistance.

Additionalinformation:

Single-electrontunnelingdevicescontainingnanoscaletunneljunctionsallowelectronstobemovedoneatatimein

responsetoappliedgatevoltages.Thecapacitanceandcurrentstandardsuseadeviceknownasanelectronpump

thatcanpasslargenumbersofelectronswithanuncertaintyapproaching1partperbillion.Thecurrentstandardis

createdbysimplydrivingthegatevoltagesatafrequencylockedtoanatomicclockorotheraccuratefrequency

standard.Thecurrentproducedbythepresentelectronpumpislimitedtoabout1pA,butweareexploringother

SETtechnologiestopushtowardmuchlargercurrents.Thecapacitancestandardoperatesbyplacingaknown

numberofelectronsontoacapacitorandmeasuringtheresultingvoltage,andthecapacitanceissimplytheratioof

chargetovoltage.Aprototypecapacitancestandardbasedoncountingelectronshasbeendemonstratedtohavean

uncertaintyoflessthan1ppm.

Selectedpublications:

1. M.W.Keller,A.L.Eichenberger,J.M.Martinis,andN.M.Zimmerman,"ACapacitanceStandardBasedon

CountingElectrons,"Science285,1706(1999).

2. M.W.Keller,"StandardsofCurrentandCapacitanceBasedonSingle-ElectronTunnelingDevices,"toappear

inproceedingsofFermiSchoolCXLVI:"RecentAdvancesinMetrologyandFundamentalConstants,"2001.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

 X       X X X
ElectronicsandElectricalEngineeringLaboratory

 11

NanoscaleQuantumStandards:

ArbitraryWaveformGeneratorsforStandards,Communications,andRadar

ProjectLeader/contact:

SamBenz,301-497-5258,benz@boulder.nist.gov

ElectromagneticTechnologyDivision,EEEL,Boulder

Approximatestaffing:

 2.0FTE

Fundingsources

NIST(40%),OtherAgencies(60%)

Objective:

Todevelophighperformancesuperconductingintegratedcircuitsandsystemsforhighprecisionvoltage

metrologyatNISTandtheelectronicsandcommunicationsindustriesandforlow-phase-noiseradar.

Constituency:

ThisprojectaddressesvoltagemetrologyneedsforNISTandtheelectronicinstrumentationand

communicationsindustriesaswellasdefensedepartmentinterestsindevelopingthenextgenerationof

advanceddigitalradarandcommunicationsystems.

Principalcurrenttasks:

• DevelopnanoscalejunctionfabricationtechniquesforlumpedarraysofJosephsonjunctionswithspacing

betweenjunctionsof10nmto100nm.

Additionalinformation:

OurjointinventionwithNorthropGrummanforaJosephsonarbitrarywaveformsynthesizerisapplicabletoradar,

communicationsandmetrologyapplications.OnlysuperconductingJosephsonjunctionscanprovidetheperfect

quantizationnecessaryforproducingtheprecisevoltageamplitudes,lowphasenoise,andhighspur-freedynamic

rangeofanidealdigitallysynthesizedwaveform.Becauseofthesmallvoltagesproducedbysinglejunctions,full

realizationofthesefeaturesforpracticalsystemshingesonthedevelopmentoflumpedarrays.Anarrayis

consideredlumpedwhenallofthejunctionsactinunisonasasingleelementofamicrowavecircuit.Thisis

accomplishedonlywhenthetotalarraylengthwithapproximately15,000junctionsisasmallfraction(typically1

mm)ofthewavelengthofthehighestmicrowavedrivefrequency.PresentJosephsonjunctionfabricationtechniques

arecapableofjunctionspacingof5μmto10μm.Inordertoachievethe100-to1000-folddecreaseinjunction

spacing,novelfabricationmethodsarenecessary.Wearepresentlyinvestigatinganumberoftechniquesfor

fabricatingnanoscalejunctionsthatrequirethree-dimensionalnanoscalecontrolofthejunctionandarray

dimensions.

Selectedpublications:

1. S.P.Benz,P.D.Dresselhaus,andC.J.Burroughs,NanotechnologyfornextgenerationJosephsonvoltage

standards,ProceedingsoftheSymposiumonMicrotechnologyinMetrologyandMetrologyinMicrosystems,

31August-1September2000,DelftUniversityofTechnology,Delft,TheNetherlands,pp.127-132.

2. S.P.Benz,C.J.Burroughs,andP.D.Dresselhaus,LowharmonicdistortioninaJosephsonarbitrarywaveform

synthesizer,AppliedPhysicsLettersVol.77,No.7,pp.1014-1016(14August2000).

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

 X       X X X
ElectronicsandElectricalEngineeringLaboratory

 12

NanoscaleQuantumStandards:

RadiometryStandardBasedonCountingPhotons

ProjectLeader/contact:

• RichardMirin,303-497-7955,mirin@boulder.nist.gov

OptoelectronicsDivision,EEEL,Boulder

• MarkKeller,303-497-5430,mark.keller@boulder.nist.gov

ElectromagneticTechnologyDivision,EEEL,Boulder

Approximatestaffing:

 2.5FTE

Fundingsources

NIST(100%),

Objective:

Todevelopasourceofindividualphotonscontrolledwithanappliedvoltagebyexploitingtheuniqueoptical

andelectricalpropertiesofnanoscalesemiconductorquantumdots.

Constituency:

Thisprojectisaimedatprovidinganewquantumstandardofopticalintensitynearthecommerciallyimportant

wavelengthof1.5μm,soitisexpectedtobenefitfundamentalopticalmetrologyaswellasusersofNIST's

opticalcalibrationservicesinindustry.

Principalcurrenttasks:

• Demonstrateasingle-photonturnstilebasedonasinglequantumdotembeddedinanappropriate

semiconductorstructure.

Additionalinformation:

Afundamentalpropertyoflightisthatitisquantizedinphotons,andaconceptuallysimplestandardforoptical

intensityisadevicethatgeneratesindividualphotonsataknownrate.Thefirstrealizationofthissimplescheme

withmetrologicalaccuracyistheobjectofthisproject.Asemiconductorquantumdotcanbemadesosmall(onthe

scaleof20nm)thatindividualelectronandholestatesinthedotcanbeaddressedseparately.Whenaquantumdot

isloadedwithoneelectronandonehole,thetworecombineandproduceaphoton.Inasingle-photonturnstile,the

injectionofelectronsandholesintoaquantumdot,andthustheproductionofindividualphotons,iscontrolledbyan

appliedvoltage.Combiningexpertiseinnanoscalequantumdotgrowthwithexpertiseinmanipulatingindividual

electrons,thisprojectisworkingtowardagoalofmakingasingle-photonturnstilethathasarepetitionrateoforder

1GHzandanerrorrateoflessthan1permillioncycles.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

X X       X X 
ElectronicsandElectricalEngineeringLaboratory

 13

NanoscaleQuantumStandards:

QuantumTimeStandardsandComputing(Fabrication)

ProjectLeader/contact:

• JimBeall,303-497-5989,james.beall@boulder.nist.gov

ElectromagneticTechnologyDivision,EEEL,Boulder

• DavidWineland,303-497-5286,david.wineland@boulder.nist.gov

TimeandFrequencyDivision,PhysicsLaboratory,Boulder

Approximatestaffing:

 1.0FTE

Fundingsources

NIST(100%)

Objective:

Developmicrofabricatediontrapstructuresforuseinexperimentsintimekeeping,quantumlogic,quantum

decoherence,andquantummeasurementtheory.

Constituency:

Thisworkpromisestoimprovetimekeepinganditsmyriadimportantapplications,suchastheglobal

positioningsystem,andtodeterminethefeasibilityofquantumcomputing.

Principalcurrenttasks:

• Fabricationofmicromachinediontraps,andarraysofthem,incollaborationwiththeTimeandFrequency

Division.

Additionalinformation:

AcollaborativeprogrambetweenEEELandPLtodevelopmicrofabricationtechniquesforionconfinement

structuresthatallowtightconfinement,opticalaccessforlasercoolingandprobing,andadvancedelectrode

configurationsformultipleionmanipulation.

Selectedpublications:

C.A.Sackett,D.Kielpinski,B.E.King,C.Langer,V.Meyer,C.J.Myatt,M.Rowe,Q.A.Turchette,W.M.

Itano,D.J.Wineland,andC.Monroe,"Experimentalentanglementoffourparticles,"Nature 404,256(2000).

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

 X       X X 
ElectronicsandElectricalEngineeringLaboratory

 14

X-rayMicroanalysisofNanometerScaleParticlesandFilms

ProjectLeader/contact:

KentIrwin,303-497-5911,kent.irwin@boulder.nist.gov

ElectromagneticTechnologyDivision,EEEL,Boulder

Approximatestaffing:

 6.0FTE

Fundingsources

NIST(40%),OtherAgencies(60%)

Objective:

Todevelopanewclassofx-raydetectorscapableofdetectingphotonswithhigh-energyresolutionandnearunityquantumefficiencythatwillenablenewgenerationsofspectroscopictoolstobecreated.

Constituency:

Thisprojectisaimedatprovidingx-raymicroanalysistoolsneededtoevaluatenanometer-scalestructuresin

anymaterialsintensiveindustry.Akeyinitialadopterwillbethesemiconductormanufacturingindustry,

whereidentificationofnanometer-sizedparticlesandthinfilmstructuresiscritical.

Principalcurrenttasks:

• Continuethedevelopmentofthesinglepixelx-raydetectorsystemsfortransfertoCSTLinNISTandto

theU.S.industrylicenseesofthetechnology.

• Developarraysofdetectorsandassociatedreadoutelectronicstodramaticallyincreasethecollectionarea

andcountrateofthespectrometer.

Additionalinformation:

Theabilitytoanalyzethechemicalcompositionofnanometersizeparticlesandnanometerthickthinfilmsiscritical

toavarietyofmaterialsintensiveindustries,includingthesemiconductormanufacturingindustry.Thedevelopment

ofcryogenicmicrocalorimeterdetectorshasproducedanewclassofenergydispersivex-rayspectrometersthat

allowthistypeofanalysistobeperformedquicklyandreliablyforthefirsttime.Introducingaradicallynew

technologysuchascryogenicmicrocalorimeterstoalargecommunityrequirescreatinganddemonstratinganentire

measurementinstrument,notjustthedetector.Inadditiontodevelopingrevolutionaryx-raydetectors,wehave

developedsuperconductingelectronicstoreadthedetectors,compactadiabaticdemagnetizationrefrigeratorsto

simplifycoolingthedetectorstomillikelvinoperatingtemperatures,androom-temperatureelectronicstoprocessthe

outputsignals.

Selectedpublications:

1. Geer,R.E.;Wu,D.;Wollman,D.A.,“High-resolutionEDSAnalysisofUltra-ThinTaSiNDiffusionBarriers

forCuMetallizationUsingMicrocalorimetry”,Proc.IEEE2001Int'lInterconnectTech.Conf.,192-194

(2001).

2. Wollman,D.A.;Nam,S.W.;Hilton,G.C.;Irwin,K.D.;Bergren,N.F.;Rudman,D.A.;Martinis,J.M.;

Newbury,D.E.,"MicrocalorimeterEnergy-DispersiveSpectrometryUsingaLowVoltageScanningElectron

Microscope,"J.Microscopy 199,37-44(2000).

3. C.K.Stahle,D.McCammon,K.D.Irwin,"QuantumCalorimetry,"PhysicsToday 52,32(1999).

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

 X        X X
ElectronicsandElectricalEngineeringLaboratory

 15

ElectricalMeasurementsofSingleMolecularRotors

ProjectLeader/contact:

MarkKeller,303-497-5430,mark.keller@boulder.nist.gov

ElectromagneticTechnologyDivision,EEEL,Boulder

Approximatestaffing:

 0.5FTE

Fundingsources

NIST(100%)

Objective:

Todevelopanewprobeofsinglemoleculesbyexploitingthesensitivityofsingle-electrontunnelingtransistors

toelectricalcharge.

Constituency:

Thisprojectisaimedatprovidinganewtoolforcharacterizingchargemotioninsinglemoleculesandis

expectedtohaveimpactacrossmuchofthefieldofmolecular(orothernanoscale)electronics.

Principalcurrenttasks:

• Useasingle-electrontunnelingtransistortodetectchangesinpolarizationcausedbytherotationof

moleculeshavingapermanentelectricdipole.

Additionalinformation:

Thereisaclassofmoleculesknownasrotorsthatconsistofashaftattachedtoasubstrateandarotatingpartthatis

permanentlychargedwithoppositepolarityonitstwoends.Thedetailsofhowthesemoleculesrotateandhow

ensemblesofmoleculesinteractarecurrentlynotwellunderstood.Asingle-electrontunnelingtransistorcontaining

nanoscaletunneljunctionscandetectachargeassmallasonethousandthofanelectroncharge,makingitsuitable

forstudyingthemotionoftheserotormoleculeseithersinglyorinensembles.Thisnewtoolwillfindusesina

varietyofwaysthatwillbenefittheoveralldevelopmentofelectronicsbasedonmoleculesorothernanoscale

objects.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

X X X    X   X X
ElectronicsandElectricalEngineeringLaboratory

 16

RectificationofLightasanElectricalPowerSource

ProjectLeader/contact:

ErichGrossman,303-497-5102,erich.grossman@boulder.nist.gov

ElectromagneticTechnologyDivision,EEEL,Boulder

Approximatestaffing:

 1.0FTE

Fundingsources

NIST(100%)

Objective:

Todemonstratedirectrectificationofnear-IRradiationtoDCinanantenna-couplednanodiode,andtoanalyze

theperformanceofnanodiodesforelectricalpowergenerationfromsolarradiationor“waste”thermal

radiation.

Constituency:

Thisprojectaddressesthelong-termnationalneedforalternativeelectricalpowersources.

Principalcurrenttasks:

• Demonstratephoton-assistedtunneling(atroomtemperature)inananodiodeilluminatedbynear-IR

radiation.

Additionalinformation:

Theabilitytoanalyzethechemicalcompositionofnanometersizeparticlesandnanometerthickthinfilmsiscritical

toavarietyofmaterialsintensiveindustries,includingthesemiconductormanufacturingindustry.Thedevelopment

ofcryogenicmicrocalorimeterdetectorshasproducedanewclassofenergydispersivex-rayspectrometersthat

allowthistypeofanalysistobeperformedquicklyandreliablyforthefirsttime.Introducingaradicallynew

technologysuchascryogenicmicrocalorimeterstoalargecommunityrequirescreatinganddemonstratinganentire

measurementinstrument,notjustthedetector.Inadditiontodevelopingrevolutionaryx-raydetectors,wehave

developedsuperconductingelectronicstoreadthedetectors,compactadiabaticdemagnetizationrefrigeratorsto

simplifycoolingthedetectorstomillikelvinoperatingtemperatures,androom-temperatureelectronicstoprocessthe

outputsignals.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

 X   X      
ElectronicsandElectricalEngineeringLaboratory

 17

Nanomagnetodynamics:MaterialsMetrologyforDataStorage

ProjectLeader/contact:

• TomSilva,303-497-7826,silva@boulder.nist.gov

MagneticTechnologyDivision,EEEL,Boulder

• BobMcMichael,301-975-5121,robert.mcmichael@nist.gov

MetallurgyDivision,MSEL,Gaithersburg

• DonnaHurley,303-497-3081,hurley@boulder.nist.gov

MaterialsReliabilityDivision,MSEL,Boulder

Approximatestaffing:

 2.5FTE(Div816)

Fundingsources:

 NIST(77%),OtherAgencies(23%)

Objective:

Developtoolstopermitdatatobestoredatspeedsapproachingthefundamentalgyromagneticquantumlimit

andatdensitiesofalmostoneterabitpersquareinch(1bitat25nmby25nm).

Constituency:

 Magneticdatastorageindustry,universityresearch

Principalcurrenttasks

• Developaferromagneticresonance(FMR)spectrometerwithsensitivityatthelevelof10,000Bohrmagnetons

basedonmicro-electromechanicalsystems(MEMS)

• Developafrequency-swept(4GHz–10GHz)ferromagneticresonancespectrometer

• Developandapplyabroadband(2GHz–4GHz)Michelsoninterferometerforthedetectionofmagnon-phonon

scatteringprocesses

• Developascannedgiant-magnetoresistance(GMR)probemicroscopewith10nmspatialresolutionand50ps

timeresolution.

Additionalinformation:

Thereisaneedtounderstandandcontroltheatomic-scaleprocessesthatdissipatespinexcitationsinferromagnetic

systems.Thisdissipationprocess,ordamping,governstheswitchingspeedofmagneticmemoryelementby

couplingtheintrinsicangularmomentumofthemagneticspinstothecrystallattice.Dataratesforcommercialdisk

drivesmustincreasetoaccountfortheever-increasinglinearbitdensities.Lineardensitiesarecurrentlyat100nm

perbit.Intwoyears,thiswillshrinkto50nm.Suchdensitieswillrequireoperationalbandwidthsinexcessof1.4

GHzinthenearfuture.Researchersinthemagneticdatastorageindustryurgentlyneedpre-competitiveassistanceto

comprehenddampingasbandwidthsapproach1GHz.Theemergentmagneticrandomaccessmemory(MRAM)

industryisalsoinneedoftoolsforthecontrolofmagneticdamping.Tobecompetitivewithsemiconductorstatic

randomaccessmemory(SRAM),MRAMdataratesmustbeinexcessof1gigabitpersecond.

AlignmentwithNSETGrandChallenges

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

X X        X 
ElectronicsandElectricalEngineeringLaboratory

 18

SingleMoleculeManipulationandMeasurement(SM3

)

ProjectLeader/contact:

• JohnMoreland,303-497-3641,moreland@boulder.nist.gov

MagneticTechnologyDivision,EEEL,Boulder

• JohnKasianowicz,301-975-5853,john.kasianowicz@nist.gov

BiotechnologyDivision,CSTL,Gaithersburg

• AngelaHightWalker,301-975-2155,angela.hightwalker@nist.gov

OpticalTechnologyDivision,PL,Gaithersburg

Approximatestaffing:

 0.33FTE(Div816only)

Fundingsources:

 NIST(100%)

Objective:

Developsingle-moleculetechnologiestoaddresssignificantinaccuraciesinthebase-pairorderinginferredby

presentgene-sequencingtools,affectingsuchwell-publicizedeffortsastheHumanGenomeProject.

Constituency:

Healthcareindustries,advancedmaterialsindustries,universityresearch

Principalcurrenttasks:

• Developfabricationmethodsfornanometer-scaleelementsandfluidicsystemsthatwilltransportsingle

molecules

• Developmeasurementmethodsforstructuralpropertiesofdeoxyribonucleicacid(DNA)usingpores

• Developtheabilitytointerpretfluorescenceresonanceenergytransfer(FRET)dataunambiguouslyon

singlemoleculesandmethodstomeasurethestructureanddynamicsofribonucleic(RNA)standardsand

hairpinsystems

• Developtheabilitytomeasuresinglemoleculesspectroscopically,usingsurfaceenhancedRaman

spectroscopy(SERS)andoptically,usingtwo-photonandUVexcitationwithsimultaneousforce

measurements

Additionalinformation:

Theprogramwillensuretheintegrityofsuchbio-informaticdatabasesthroughthedevelopmentandutilizationofa

high-throughput,singlemoleculemanipulationandmeasurement(SM3

)platformtodirectlymanipulateandmeasure

thestructureanddynamicsofsingleRNAorDNAmolecules.Withinthefive-yeartimespanofthiseffort,the

followingwillbedeveloped:Aplatformwillbeproducedthatwillcombinethesecapabilitiestomakeasingle

biomoleculemeasurementworkbench.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

X  X       X 
ElectronicsandElectricalEngineeringLaboratory

 19

CoherentSpinElectronicsforMicrowaveandTerahertzCommunicationandSignal

Processing

ProjectLeader/contact:

 StephenRussek,303-497-5097,russek@boulder.nist.gov

 MagneticTechnologyDivision,EEEL,Boulder

Approximatestaffing:

 3FTE

Fundingsources:

 NIST(85%),OtherAgencies(15%)

Objective:

Metrologyandunderstandingofhighfrequencydynamicsinmagneticmaterials.

Constituency:

Telecommunicationindustries,magneticstorageindustries,universityresearch

Principalcurrenttasks:

• Measurehigh-frequencyspinprecessionandresonanceinatwo-dimensionaldegenerateelectrongas

(2DEG)

• Examinetheinteractionoftheelectronspinsinaferromagneticlayerwithspinsinasemiconductor

substrateunderdifferentelectricalexcitationsandtransportconditionsinordertounderstandthe

depolarizationprocess

Additionalinformation:

Devicesemployingelectricallyexcitedcoherentspinprecession(1GHzto1THz)willbedeveloped.Thekey

innovationwillbetheuseoftherecentlydiscoveredspin-momentum-transfer(SMT)effecttoenableelectrical

manipulationofspinsinnanoscaledevices,ratherthantheuseofappliedmagneticfieldsorpolarizedlightpulses.

TheworkisincollaborationwithCornellUniversityandMotorolaResearchLabs.NISTwillconcentrateonthe

metrologyandunderstandingofhighfrequencydynamicsinmagneticmaterials.IntheSMTphenomenon,adcspinpolarizedelectroncurrentincidentonamagneticelementprovidesadirecttransferofspinangularmomentuminthe

processofscattering,therebyimpartingatorqueonthemagnetizationoftheactiveelement.Atsufficientlylarge

currents,stimulatedemissionensues,resultinginuniformspinprecessionwithintheferromagnetandthepotential

fordiffusionofcoherentspinsintoadjacentcontacts.Thiseffectwillbeappliedtodevelopspin-coherentdevices

usinghybridferromagnet/semiconductorheterostructuresinwhichtheprecessionaldynamicsofexcitedspinsare

exploitedforapplicationsinhigh-speedcommunicationsandsignalprocessing.

AlignmentwithNSETGrandChallenges

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

 X        X 
ElectronicsandElectricalEngineeringLaboratory

 20

NanoprobeImaging

ProjectLeader/contact:

 JohnMoreland,303-497-3641,moreland@boulder.nist.gov

 MagneticTechnologyDivision,EEEL,Boulder

Approximatestaffing:

 0.5FTE

Fundingsources:

 NIST(100%)

Objective:

Developmentofscanned-probemicroscopy(SPM)andmicro-electromechanicalsystems(MEMS)for

nanometer-scalemagneticmeasurementsinsupportofthemagneticdatastorageindustry.

Constituency:

MagneticStorageIndustry

Principalcurrenttasks:

• Developmentofa“magneticresonancespectrometeronachip”toachievemagnetic-resonanceimaging

resolutionof1nmonferromagneticthinfilms.

Additionalinformation:

ProjectmembersperformresearchtounderstandandrelateSPMimagesandMEMSmagnetometermeasurementsto

theperformanceofmagneticmaterialsanddevicesforfuturerecordingtechnologies.Theprojectiscurrently

focusingonultra-smallmagnetic-forcemicroscopytipsforimagingrecordingheadsandmediaataresolutionof

20nm.Quantitativefieldmappingofheadsandmediaisbasedonelectromechanicaldetectionofmagnetic

resonance.MEMSmagnetometerswithintegratedspecimensandhighsensitivityarebeingdeveloped.Overthenext

fewyears,theprojectwillworkona“magneticresonancespectrometeronachip”toachievemagnetic-resonance

imagingresolutionof1nmonferromagneticthinfilms.Recentresearchincludesthedevelopmentofnew

ferromagneticresonance(FMR)spectrometersbasedoncalorimetry,torque,andtransferofspinangularmomentum.

Suchsensorscanbeintegratedwithatomic-forcemicroscopesforimagingoflocaldcandrfmagneticfields.

Selectedpublications:

1. MarkusLohndorf,JohnMoreland,PavelKabos,andNickRizzo,“Microcantilevertorquemagnetometryof

thinmagneticfilms,”J.Appl.Phys.87,pp.5995-5997(2000).

2. JohnMoreland,MarkusLohndorf,PavelKabos,andR.D.McMichael,“Ferromagneticresonance

spectroscopywithamicromechanicalcalorimetersensor,”Rev.Sci.Instrum.8,3099(2000).

3. AlbrechtJander,JohnMoreland,andPavelKabos,“MicromechanicalDetectorsforLocalFieldMeasurements

BasedonFerromagneticResonance,”J.Appl.Phys.89,7086(2001)

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

 X        X 
ElectronicsandElectricalEngineeringLaboratory

 21

EmergingApplicationsofNanoscaleMagnetoresistiveSensors:

Forensics,Non-destructiveFailureAnalysis,Surveillance,BiologicalMonitoring

ProjectLeader/contact:

• DavidP.Pappas,303-497-3374,david.pappas@nist.gov

MagneticTechnologyDivision,EEEL,Boulder

Approximatestaffing:

1.5FTE

Fundingsources:

 NIST(83%),OtherAgencies(17%)

Objective:

Mapoutmagneticfieldswithhighsensitivityusingroomtemperaturemagnetoresistivearrays.Thetarget

sensitivityisdifferentforthevariousapplicationssuchasforensicsanalysisandbio-magneticfieldsensors.In

general,wewillbeadvancingtheareaofmagneticfieldmetrologybyleveragingoffoftherapiddevelopment

ofmagneticsensorsseeninthedatastorageindustry.

Constituency:

Forensicsanalysts,security(detectionoflowlevelsofferrousmaterials),bio-magnetism(electrocardiograph,

ECG,andpossiblyelectroencephalograph,EEG,monitoring),sensorsformonitoringpersonnelandequipment

movementinmilitarysettings,sensorsforsatellitemagneticfieldmeasurements,VLSI(verylargescale

integration)deviceandpackagingfailureanalysis.

Principalcurrenttasks:

• Developareal-timeimagingsystemforanalogstoragemediaanalysis.

• Extractvaluableinformationfromdamaged/modifieddigitalmagneticdatastoragemedia.

• MapoutfieldsandinvertMaxwell’sequationstoidentifysourcesofleakagecurrentsinVLSIchipsfor

failureanalysis.

Additionalinformation:

Highsensitivitymagneticfieldmeasurementisimportantinawiderangeofactivities.Wehavebeendeveloping

scanningelementsandarraysofelementstomapoutthespatialvariationsofmagneticfieldswithhighresolution.As

wedevelophighersensitivitiesandspatialresolution,wefindmoreandmoreapplicationsofthesedevices.Forlow

fieldmeasurements,thepresenttechnologyusessuper-conductingdevicesthatmustbeheldatlowtemperature.We

arefindingthatastheunderstandingofmagnetoresistivematerialsevolvesandthedevelopmentofmagneticflux

concentratorsisincorporated,devicesthatbringthesetechnologiestogethercancompetewiththelowtemperature

sensors.

Selectedpublications:

D.P.Pappas,etal.“SecondHarmonicMagneto-ResistiveImagingtoAuthenticateandRecoverDatafrom

MagneticStorageMedia”ProceedingsofSPIEConferenceonTechnologiesforLawEnforcement,Boston,

MA,inpress,Nov.2000.

AlignmentwithNSETGrandChallenges

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

X X X   X X  X X 
ManufacturingEngineeringLaboratory

 22

Atom-scaleLengthMeasurement,StandardsFabrication,andNanomanufacturing

ProjectLeader/contact:

RickSilver,301-975-5609,richard.silver@nist.gov

PrecisionEngineeringDivision,MEL,Gaithersburg

Approximatestaffing:

 4.0FTE

Fundingsources

NIST(95%),InternationalSEMATECH(5%)

Objective:

Tocalibrateatomically-defined,three-dimensionallengthstandardsfornanomanufacturingandrelated

industries.

Constituency:

Semiconductorelectronics,magneticstorage,microelectromechanicalsystems(MEMS),andemerging

nanotechnologyindustries

Principalcurrenttasks:

• Currentlywritingfeaturesinsiliconwithcriticaldimensionsassmallas10nm.Improvethefabrication

robustnesstoenabletheregularprocessingoffeaturesthissizeandsmaller.

• Usethefieldionmicroscope(FIM)foratomicresolutionimagingofscanningtunnelingmicroscopy(STM)

tips.Workwiththescanningelectronmicroscopy(SEM)metrologyprojectforthedevelopmentofnanotips

asSEMfieldemitters.

• WorkwithSEMATECHforthedevelopmentofphotolithographicallypatternedthree-dimensionaldoubleetchedstructuresinsilicon.

• Developmethodsforthedirectinterferometrymeasurementsofsurfaceatomspacingswithanunbroken

uncertaintychain.

• RoomtemperaturechemicalpreparationofatomicallyorderedSisurfacesforatomcountingand

nanofabrication.

Additionalinformation:

Theprojectobjectiveistomeetthefuturemeasurementandstandardsneedsoftheevolvingnanomanufacturing

industry.Thisindustrywillbecomepervasivewithverydifficultbutessentialstandardsandinteroperability

requirements.Whethertoolinganewmanufacturingfacilityormakingprocurementcomparisons,accuratetool

measures,calibratedstandards,andperformanceevaluationmethodswillbeneeded.OnechallengefacingNISTis

thenon-availabilityofstandardartifactsorthemeanstocommerciallyproducethem.Wearedeveloping,therefore,a

parallelefforttofabricatetheseartifactsandenabletheirtransfertoothermetrologytools.

Selectedpublications

1. H.Zhou,J.Fu,S.GondaandR.M.Silver“EffectsofEtchingTimeandWaferMiscutontheMorphologyof

EtchedSi(111)Surfaces,”SPIENanotechnologyProc.,2001(inprint).

2. S.Gonda,H.Zhou,J.FuandR.M.Silver,“AnewdesignanduncertaintyconsiderationofametrologyUHVSTMfordirectmeasurementsofatomspacings,”SPIENanotechnologyWorkshopProc.,2001(inprint).

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

 X        X 
ManufacturingEngineeringLaboratory

 23

OpticalManipulationforTestingandAssemblyofMicro/NanoscaleDevices

ProjectLeader/contact:

ThomasLeBrun,301-975-4256,thomas.lebrun@nist.gov

PrecisionEngineeringDivision,MEL,Gaithersburg

Approximatestaffing:

 3.7FTE

Fundingsources

NIST(100%)

Objective:

Tousefocusedlaserbeamstomanipulatenanometerandμm-scalecomponentsbothinairandinaqueous

environmentssuitableforbio-devices.Inthiswaytestnanodevices,assemblethem,andmeasureforcesof

interactionbetweencomponentstoidentifyandaddressthefundamentalmeasurementandstandardsissues

relatedtofabricationofmicro/nanoscaledevices.Ultimatelythesetoolswillenabletestingandassemblyof

nanodevices,operatinginparallelandwithnoninterferingprobes.

Constituency:

Biotechnologyindustry,nanomanufacturingindustry,andinstrumentmanufacturers.

Principalcurrenttasks:

• Ditheropticaltraptocreatetrappotentialsshapedtograspcomplexcomponents

• Interfacetraptovirtualrealityenvironmentforheuristicmanipulationoftrappedcomponents

Additionalinformation:

Oneofthemostpressingrequirementsforthedevelopmentofnanotechnologyisnoveltoolstomeasureand

manipulatespecimensatthenanometertomicrometerscale—akeypointthathasbeenmaderepeatedlyinreports

andworkshopsoftheNationalNanotechnologyInitiative.Thisprojectwillcreatenewtoolstomeasurethe

performanceofnanodevices,manipulatenanocomponentsandprovidetraceabilityforforcemeasurementsusing

opticaltweezers.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

  X    X   X X
ManufacturingEngineeringLaboratory

 24

ScanningElectronMicroscope(SEM)LengthMetrologyofNanometerStructures

ProjectLeader/contact:

• Dr.AndrasE.Vladar,301-975-2399,andras@nist.gov

• Dr.MichaelT.Postek,301-975-2299,postek@nist.gov

PrecisionEngineeringDivision,MEL,Gaithersburg

Approximatestaffing:

3.0FTE

FundingSources:

NIST(75%),OtherAgencies(5%),ISMT(20%)

Objective:

Developmentoftraceablestandardartifacts,infrastructuralmethodologyfordimensionalandinstrument

performancemeasurements,andcalibrationprocedures.

Constituency:

Themicroelectronicsindustry,includingsemiconductorintegratedcircuits(ISMT),magneticstorage,MEMS

andemergingnanotechnologyindustries.

Principalcurrenttasks:

• Development,certificationandissuanceofRM8090andSRM2090,SEMlowandhighaccelerating

voltagemagnificationcalibrationstandards.

• DevelopmentcertificationandissuanceofRM8120andSRM2120,waferlevel,production-relevant

linewidthstandards.

• Infrastructuraldevelopmentofnewmetrologytechniquesfornanometerscaledevices.

• DevelopmentofperformancemetricsforSEMinstrumentation.

• NIST-widesupportinhigh-resolutionimaging.

Additionalinformation:

SEMsareusedinmanytypesofresearch,developmentandmanufacturing.Beyondtheextensiveuseinthe

microelectronicsindustry,whichhasalreadydimensionalmetrologyneedswithaccuraciesofafewnanometers,

SEMscanbeusedforimaging,measurementandmanufacturingofstructureswithfeaturesizesdowntoafew

nanometers.Itisessentialtodevelopstandardartifactsandmethodsfordimensionalmeasurements,including

calibrationproceduresandinstrumentperformancemeasurements.Athoroughknowledgeoftheprinciplesofsignal

generationandformationintheSEM,3-dimensionalmodelingofelectronbeam-sampleinteraction,andmetrology

instrumentationforcorrectsizingandshapemeasurementareneededforemergingnanotechnologyapplications.

Selectedpublications:

1. Vladar,A.E.,Postek,M.T.,Zhang,N-F,LarrabeeR.D.,andJones,S.N.,"ReferenceMaterial8091:new

scanningelectronmicroscopesharpnessstandard,"SPIE 4344,827-834,2001.

2. Postek,M.T.,Vladár,A.E.,Wells,O.C.,andLowney,J.L.,"ApplicationoftheLow-LossScanningElectron

Microscope(SEM)ImagetoIntegratedCircuitTechnology;Part1,ApplicationstoAccurateDimension

Measurements,"SCANNING,p.289-304,2001.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

X X        X 
ManufacturingEngineeringLaboratory

 25

OpticalOverlayandLinewidthMeasurementMethodsandNanometer-scaleStandards

ProjectLeader/contact:

RickSilver,301-975-5609,richard.silver@nist.gov

PrecisionEngineeringDivision,MEL,Gaithersburg

Approximatestaffing:

 6.0FTE

Fundingsources

NIST(90%),InternationalSEMATECH(10%)

Objective:

Providetechnologicalleadershiptotheemergingnanotechnologyandrelatedmanufacturingindustriesby

developingandevaluatingthemethods,tools,andartifactsneededtoapplyopticaltechniquestothemetrology

needsoftheseindustries.

Constituency:

Semiconductorelectronics,magneticstorage,MEMS,andemergingnanotechnologyindustries.

Principalcurrenttasks:

• ContinuousdevelopmentoftheNISToverlaymetrologytool,measurementmethodstoobtainuncertainties

comparableorbetterthanthebestindustryoverlaytools,andstandardstosupportandcalibratethesetools.

• CalibrationofNISTPhotomaskLinewidthStandardSRM2059,andthedevelopmentofcalibration

methodstoobtainopticaltransmissionlinewidthmeasurementuncertaintiesadequatetomeetindustry

needs.

• Developmentoftwo-dimensionalgridcalibrationstandards,high-accuracyplacementstandards,and

associatedmeasurementtechniques,includingself-calibrationandadvancedtoolmappingasusedby

industry.

• Developmentofleadingedgecorrelationandhardwarecontrolalgorithmsfornanometerscaleoptical

measurements.

Additionalinformation:

Opticalmethodsareusedwidelyinthemanufacturingofsemiconductor,flatpanel,photonic,andstoragedevices.

Theseindustriescanbeviewedasprecursorstotheevolvingnanomanufacturingindustrysincetheyfabricatevery

smallcriticaldimensionstructuresandhavehistoricallypushedmetrologytoitslimit.Inthistypeofleadingedge

manufacturing,procurementcomparisons,accuratetoolmeasuresandcalibrationstandardsareessentialfor

productivity.Thetightertolerancesencounteredinthemanufactureofnanometer-scaledevicesplaceincreasing

demandsonfeaturelinewidthaccuracyandonoverlaytolerances.Sincetheparallelnatureofhighspeed,nondestructiveopticalmetrologymakesitthetoolofchoicewhenapplicable,NISThasacomprehensiveprogramto

bothsupportandadvancetheopticaltechniquesneededtomaketheseoverlay,pitch,andcriticaldimension

measurements.

Selectedpublications:

R.M.Silver,J.Jun,S.Fox,andE.Kornegay,“RecentadvancesinOverlayMetrology,”FutureFabIntl. 11,

2001.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

 X        X 
ManufacturingEngineeringLaboratory

 26

ScannedProbeMicroscopeDimensionalMetrology

Projectleader/contact:

• Dr.JohnKramar,301-975-3447,john.kramar@nist.gov

• Dr.TedVorburger,301-975-3493,theodore.vorburger@nist.gov

PrecisionEngineeringDivision,MEL,Gaithersburg

Approximatestaffing:

 4.0FTE

Fundingsources:

 NIST(100%)

Objective:

Toprovidecalibrationartifactsandmeasurementservicesthatsupportscannedprobemicroscopy,surface

metrology,anddimensionalmetrologyneedsoftheemergingnanotechnologyindustry.

Constituency:

Scannedprobemicroscopeusersandnanotechnologyindustries.

Principalcurrenttasks:

• Providecalibrationsandservicesthatsupportscannedprobemicroscopyandsurfacemetrology

• Developmetrologyinstrumentsfortheprovisionofthesemeasurementcapabilities

• Developartifactsforthedisseminationofsub-micrometerstepheightandpitchtraceability

• Supportindustry’seffortstodevelopnationalandinternationaldocumentarystandardsinscannedprobe

microscopyandsurfacemetrology

Additionalinformation:

Thesemeasurementcapabilitiesandservicesarebecomingincreasinglyimportantbothforthedevelopmentofnew

nano-scalemanufacturingprocessesandforthecontinuedscale-downofconventionaltechnology.Severalartifacts

haverecentlybeenmeasuredforindustrycustomers.Theseincludemeasurementsofaveragepitchofstandard

gratingsfortheChandraX-rayObservatory(200.01nm±10pm),measurementsofpitchstandardsrangingfrom

200nmto2μm,andmeasurementsofstepheightstandardsupto90nminheight.

SelectedPublications:

1. R.Dixson,etal.,"SiliconSingleAtomStepsasAFMHeightStandards,"Proc.SPIE.4344,157(2001).

2. R.Dixson,etal.,"AccurateDimensionalMetrologywithAtomicForceMicroscopy,"Proc.SPIE3998,362

(2000).

3. J.A.Kramar,etal.,"GratingPitchMeasurementswiththeMolecularMeasuringMachine,"Proc.SPIE 3806,

46(1999).

4. T.V.Vorburger,etal.,"CharacterizationofSurfaceTopography,"BeamEffects,SurfaceTopography,and

DepthProfilinginSurfaceAnalysis,A.Czandernaetal.eds.(PlenumPress,NewYork,1998),p.275.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

 X        X X
ManufacturingEngineeringLaboratory

 27

FabricationandCharacterizationofNanostructuresforStandards

ProjectLeader/contact:

JohnDagata,301-975-3597,john.dagata@nist.gov

ThomasLeBrun,301-975-4256,thomas.lebrun@nist.gov

PrecisionEngineeringDivision,MEL,Gaithersburg

Approximatestaffing:

 2.4FTE

Fundingsources

NIST(100%)

Objective:

Todevelopdiversefabricationtechniquesforrapidprototypingoffunctionalnanostructures,andapplythese

techniquestofabricatedimensionalandsurfacetexturestandards.Fabricationofsuchstandardsisbeing

consideredinthecontextofnovelself-organizingchemicalandbiochemicalprocessesthatdemandchemical

functionalityaswellasstructurescomposedofmoretraditionalmetallicandsemiconductormaterials.Current

techniquesincludescanningprobeoxidation,electron-beamlithography,masklessopticallithography,andsoft

lithography.

Constituency:

Semiconductorelectronicsindustryandnanoscalemanufacturingindustry.

Principalcurrenttasks:

• Applyscannedprobeoxidation(SPO)intappingmodetofabricateregulararraysofnanostructureswith

widthsof30nmorless.

• CombineSPOwithmasklessphotolithographytopatternlargeareaswithnano-scalefeatures

Additionalinformation:

Fewtechniquesexistforthefabricationofdeliberatelypatternedstructuresofarbitrarychemicalcompositionthat

aresmallerthan100nanometers,butsuchnanoscalestructureswillbeessentialformetrologicalaspectsof

nanotechnology.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

         X X
ManufacturingEngineeringLaboratory

 28

Atomic-scaleMotionControlforNanometrologyandNanomanufacturing

ProjectLeader/contact:

ThomasLeBrun,301-975-4256,thomas.lebrun@nist.gov

PrecisionEngineeringDivision,MEL,Gaithersburg

Approximatestaffing:

 1.9FTE

Fundingsources

NIST(100%)

Objective:

Createstageswithsubnanometerpositioningaccuracyinmultipledegreesoffreedombycombiningatomicscalemotionwithpicometerinterferometry,andreal-timeservocontrol.Pairthesestageswithlong-range

positioningsystemstoallowatomic-scalepositioningoverrangesofcm.Usethistechnologytoprovidelength

measurementserviceswithuncertaintiesatorbelowonenanometer.

Constituency:

Microelectronics,opticalencodermanufacturers,andnanoscalemanufacturers.

Principalcurrenttasks:

• Constructandtestsecond-generationfinestagewithsubnanometerpositioningaccuracy

• Testprototypelinescaleinterferometer

Additionalinformation:

Theevolutionofnanotechnologyisrapidlypushingthelimitsofourabilitytomeasurelength.Newtoolsarealso

crucialtoenablethedevelopmentofnanotechnology,andfornanomanufacturingthiswillmeanpositioningwith

atomic-scaleaccuracyoverwiderrangesthaniscurrentlypossible.Thisprojectiscreatingstagestoprovide

positioningandmotionwithsubnanometeraccuracytoallownanometrologyandnanomanufacturingonmacroscopic

artifacts(i.e.,overrangesofcentimeters).ThistechnologyisalsobeingappliedwithinNISTtodevelopanew

generationoflengthmeasurementservicestomeettheneedsofhigh-techindustry(microelectronics,opticalencoder

manufacturers),aswellastheneedsofthenascentnanotechnologyindustry.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

         X X
ManufacturingEngineeringLaboratory

 29

ModelingforNanometer-ScaleLengthMetrology

ProjectLeader/contact:

JohnVillarrubia,301-975-3958,john.villarrubia@nist.gov

PrecisionEngineeringDivision,MEL,Gaithersburg

Approximatestaffing:

2.2FTE

Fundingsources

NIST(75%),Other(25%)

Objective:

Developmentandimprovementofcomputationalmodelstosimulatethegeometricalartifactsintroducedby

measuringinstruments,validationofmodelsbyappropriateexperiments,andinversionofthesemodels(tothe

extentpossible)todeducethesamplegeometrythatproducedameasuredimage,therebyenablingdimensional

metrologywithnanometer-scaleaccuraciesandrepeatabilities.

Constituency:

Semiconductorelectronics,magneticstorage,MEMS,andemergingnanotechnologyindustries

Principalcurrenttasks:

• Developmentofamodel-basedlinewidthandlineshapemeasurementsystemforthescanningelectron

microscope(SEM).

• ModelpredictionsofdependenceofSEMlinewidthmeasurementrepeatabilityuponmeasurement

conditionssuchassignaltonoiseratio,depthoffield,samplegeometry,etc.

• Comparisonsbetweenexperimentandtwomodelcodesformeasurementoflinewidthinoptical

microscopes.

• Thicklayeropticalmodelingforlinewidthandoverlaymetrology.

Additionalinformation:

Economicallysignificantexistingindustries(e.g.,semiconductorelectronics)alreadyneeddimensionalmetrology

withuncertaintiesofnanometers(see,e.g.,theInternationalTechnologyRoadmapforSemiconductors),andthe

needisexpectedtobestillmoreacuteforemergingnanotechnologyindustries,whichwillproduceevensmaller

structureswithmorecomplexgeometries.NeitherNISTnorindustrycanperformwidthorshapemeasurementsto

thisaccuracywithoutmodelingthemeasurementsbecauseinteractionbetweenthemeasuringinstrumentandthe

sampleproducesimagedistortionsonascaledeterminedbythecharacteristicsizeoftheprobe-sampleinteraction

volume.Theseprobingerrorsaregenerallyonthescaleofsometensofnanometersorlarger.Unlessunderstoodand

corrected,theythereforeposeaninherentproblemformeasurementsrequiringnanometer-scaleaccuracy.

Selectedpublications:

1. J.S.Villarrubia,A.E.Vladár,J.R.LowneyandM.T.Postek,“EdgeDeterminationforPolycrystalline

SiliconLinesonGateOxide,”Proc.SPIE 4344,147-156(2001).

2. J.Potzick,"Theproblemwithsubmicrometerlinewidthstandards,andaproposedsolution,"Proc.SPIE

4344,139-146(2001).

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

 X        X 
ManufacturingEngineeringLaboratory

 30

MicroforceRealizationandMeasurement

ProjectLeader/contact:

JonPratt,301-975-5470,jon.pratt@nist.gov

ManufacturingMetrologyDivision,MEL,Gaithersburg

Approximatestaffing:

2.5FTE

FundingSources:

NIST(100%)

Objective:

Toestablishametrologicalbasisforsmallforcemeasurementbydevelopinganelectronicrealizationofforce

traceabletotheSIintheregimebetween10-8Nand10-4N.

Constituency:

Manufacturersandusersofinstrumentedindentationequipment,manufacturersandusersofscannedprobe

microscopesthatareemployedinforcecharacterization,andnationalmeasurementinstitutes(NMI’s).

Principalcurrenttasks:

• Developingaprimaryforcebalancetocompareelectronicandgravitationallyderivedforceswiththe

potentialtoexamineatomicandquantumderivedforces

• Exploringvarioussmallforcemeasurementdevicesforuseastransferartifacts

• Buildingalaboratorytohousetheprimarybalance

Additionalinformation:

Themeasurementofsmallforceisemployedtocharacterizetheperformanceofavarietyofindustrialproducts

rangingfromthinfilmcoatings,suchaspaintsandlacquers,tolowthrustpropulsionsystemsforspacecraft,suchas

fieldemissionelectricpropulsion.Agreatdealofscientificinterestexistswithinthebiologicalsciences,where

researchersareusingsmallforcemeasurementstounravelthemysteriesofproteinfolding,tissuemechanics,and

cellularfunction.Thereisalsomuchactivitywithinthephysicalsciences,whereresearchersareusingsmallforce

measurementtoconfirmthetheoreticalpredictionsofquantummechanicsandtoprobethephysicsoftheatom.A

directandaccuratelinktotheSIisdifficulttoachieveforforceslessthan10μN,owingtodifficultiesinobtaining

andhandlingsmallmassartifacts.Recognizingthis,weseektodemonstratetheviabilityofrealizingsmallforce

usinglessdirectmethodsbasedonelectronicmeans.Ultimately,weseekaforcebalancewithadynamicrangethat

encompassesandcanaccommodatethesmallestavailabledeadweightartifacts,yetiscapableofresolvingforceson

anatomicscalebyappealingtotheoutputofawelldefined,andmetrologicallyaccurateelectrostaticforce

generator.

Selectedpublications:

1. D.B.Newell,J.R.Pratt,J.A.Kramar,D.T.Smith,L.A.Feeney,andE.Williams,2001,“SITraceabilityof

ForceattheNanonewtonLevel,”Proceedingsofthe2001NCSLInternationalWorkshopandSymposium,

WashingtonDC.

2. J.R.Pratt,D.B.Newell,E.R.Williams,D.T.Smith,andJohnKramar,2001,“TowardsaTraceable

NanoscaleForceStandard”,Proceedingsofthe2ndEUSPENInternationalConference,Turin,Italy,p.470-

473.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

         X X
ManufacturingEngineeringLaboratory

 31

LargeScaleSurfaceMetrologywithSub-NanometerUncertainty

ProjectLeader/contact:

• Dr.UlfGriesmann,301-975-4929,ulf.griesmann@nist.gov

• Dr.TonySchmitz,301-975-8346,tony.schmitz@nist.gov

ManufacturingMetrologyDivision,MEL,Gaithersburg

Approximatestaffing:

2.0FTE

Fundingsources:

NIST(100%)

Objective:

Improvementanddevelopmentofleading-edgeopticalinterferometryofthemeasurementofsurfacefiguresof

flat,spheric,conic,andasphericsurfaceswiththegoalofachievingatomicleveluncertaintiesof0.25nmrms

tomeettheneedsofopticallithographybasedindustries.

Constituency:

Opticsindustry,lithographytoolindustry,semiconductormanufacturingindustry,semiconductormaterial

industry.

Principalcurrenttasks:

• CommissiontheNISTX-rayopticsCALIBrationInteRferometer(XCALIBIR)

• Developaflatnessstandardtomeettheneedofindustryforflatnessmeasurementservicesandflatness

standards.

AdditionalInformation:

Inthefuture,themanufactureofnanoscaleobjectswithopticallithographywillrequirebothadvancedopticstools

andmaterialscapableofatomiclevelshapetolerances.XCALIBIRgivesustheabilitytomakethese

characterizationsandthustoprovidestandardstoindustry.Establishedlithographybasedapproachesfor

manufacturingnanometerscaleobjects(inchipmanufacturing,microelectromechanicalsystems-MEMS,etc.)have

theadvantageofmassiveparallelismovernovel“assembler”typeapproaches.Thisparallelismisthekeytothe

economicproductionofnanoscaledevicesand,therefore,weexpectlithographybasedmanufacturingmethodsto

remaincriticallyimportant.

AlignmentwithNSETGrandChallenges:

MAT ELEC HEALTH ENV ENER SPACE BIOSEN TRANS SECUR MET MAN

 X        X X
ChemicalScienceandTechnologyLaboratory

 32

MolecularElectronics

ProjectLeader/contact:

• RogerD.vanZee,301-975-2363,roger.vanzee@nist.gov

ProcessMeasurementsDivision,CSTL,Gaithersburg

• CurtA.Richter,301-975-2082,curt.richter@nist.gov

SemiconductorElectronicsDivision,EEEL,Gaithersburg

Approximatestaffing:

 3.25FTE(CSTL)

Fundingsources:

 NIST(100%)

Objective:

Tocharacterizethestructuralpropertiesandconductionmechanismthroughmoleculesandtodevelopmethods

toreliablyandreproduciblymeasuretheelectricalpropertiesofsmallensemblesofmolecules.

Constituency:

 Microelectronicsindustry

Principalcurrenttasks:

• DevelopaNISTstandardsuiteofmolecularteststructures(MTS).

• Developafundamentalunderstandingofchargetransportthroughmoleculesandmolecularensembles.

Additionalinformation:

Thistaskispartofacross-disciplinary,inter-laboratoryeffortatNIST(EEELandCSTL)withanoverallgoalof

developingthemeasurementsciencethatwillenablemolecularelectronics(ME)toblossomintoaviableindustry.

WithinEEEL,wearedevelopingtest-structuresbaseduponnanofabricationandMEMS(Micro-Electro-Mechanical

Systems)processingtechniquesforassessingtheelectricalpropertiesandreliabilityofmoletronicmolecules.In

additiontothecomplexityofthenanofabricationofteststructures,thechallengesassociatedwithmeasuringthe

electricalpropertiesofthesesmallmolecularensemblesaredaunting.WithinCSTL,wearestudyingthestructureof

themolecularensemblesinsideMEdevicesandinvestigatingchargetransportthroughthesemolecules.These

experimentsarecarriedoutusingsophisticatedopticalspectroscopiesandscanned-probeinstruments.These

molecularsystemsarebeingmodeled,toprovidetheoreticalinsightsintothemeasuredtransportpropertiesandto

validatepredictivemodels.

AlignmentwithNSETGrandChallenges:

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ChemicalScienceandTechnologyLaboratory

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Self-AssembledMonolayers(SAMs)forChemicalandBiochemicalMeasurements

ProjectLeader/contact:

MichaelJ.Tarlov(CSTL),301-975-2058,mtarlov@nist.gov

ProcessMeasurementsDivision,CSTL,Gaithersburg

Approximatestaffing:

 2.5FTE

Fundingsources:

 NIST(100%)

Objective:

Establishingafundamentalunderstandingofthemolecularself-assemblyprocessesthatgoverntheformation

ofmonolayersandmulti-layerswithusefulmolecularrecognitionproperties.

Constituency:

 Biosensingandbiotechnologyindustries

Principalcurrenttasks:

• DNA-functionalizedSAMsarebeingstudiedasstructuralelementsandmolecular-scale“zip-codes”forthe

assemblyofhybridnano-structures

Additionalinformation:

MeasurementmethodsthatprovidestructuralinformationconcerningSAMsystemsaredevelopedandappliedto

novelSAMsystemstocorrelatemolecularscalestructurewithsensinganddiagnosticbehavior.Effortsare

primarilyconcentratedonelucidatingthestructureofnucleicacidSAMsofthetypethatarefoundinDNAchips

usedforgeneticanalysis.

AlignmentwithNSETGrandChallenges:

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  X X   X   X 
ChemicalScienceandTechnologyLaboratory

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CombinatorialMethods

ProjectLeader/contact:

StevenA.Buntin,301-975-2989,steven.buntin@nist.gov

SurfaceandMicroanalysisScienceDivision,CSTL,Gaithersburg

Approximatestaffing:

 2.0FTE

Fundingsources:

 NIST(100%)

Objective:

Todevelopmeasurementmethodsthatcanevaluatesmallerandsmallersamples,extractmeaningfuldataon

nanoscaleproperties,andprovidesamplearrayplatformsthatcanbeindependentlyheatedandaddressed.

Constituency:

 Laboratoryinstrumentationsector,materialsperformancecharacterizationlaboratories

Principalcurrenttasks:

• Developsurfaceandmicroanalysismethodsthatwillallowhyperspectraldatacollectiononamultiplexed

measurementplatform.

• AssessadhesionofpolymerblendlibrariesbyhighthroughputmethodsusingRamanimaging

instrumentation.

• Developanon-contact,hyperspectralscannedprobecapableofsimultaneousmeasurementofsample

propertiesusingmicrowave,infrared,visible,andultravioletspectroscopies.

AlignmentwithNSETGrandChallenges:

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ChemicalScienceandTechnologyLaboratory

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ChemicalNanoanalysis

ProjectLeader/contact:

EricB.Steel,301-975-3902,eric.steel@nist.gov

SurfaceandMicroanalysisScienceDivision,CSTL,Gaithersburg

Approximatestaffing:

 2.0FTE

Fundingsources:

 NIST(50%),OtherAgencies(50%)

Objective:

Toestablishnanometer-scalechemicalmeasurementsandstandards.

Constituency:

 Electronicsindustry,powdertechnologies,thinfilmcoatings,environmental

Principalcurrenttasks:

• Developelectronandx-rayspectroscopicmeasurementmethodsonelectronbeamandsynchrotron

instrumentstoallowhighspatialresolutionanalysis

• Developandanalyzethinfilmandnanoparticletestmaterialsarebeingtodeterminethebestchemical

nanoanalysisapproaches

AlignmentwithNSETGrandChallenges:

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ChemicalScienceandTechnologyLaboratory

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MolecularScaleCharacterization

ProjectLeader/contact:

 LeeJ.Richter,301-975-4152,lee.richter@nist.gov

 SurfaceandMicroanalysisScienceDivision,CSTL,Gaithersburg

Approximatestaffing:

 3.5FTE

Fundingsources:

 NIST(100%)

Objective:

TodevelopnonlinearopticmethodsandSecondaryIonMassSpectrometry(SIMS)toprobeinterfacestructure

anddynamicsatthemolecularlevel.

Constituency:

 Electronicsindustry,coatingsindustry

Additionalinformation:

NonlinearopticmethodsandSecondaryIonMassSpectrometry(SIMS)arebeingdevelopedtoprobeinterface

structureanddynamicsatthemolecularlevel.Thetechniqueofvibrationally-resonantsumfrequencygeneration

uniquelyprovidesinformationconcerningmolecularbondingspecificallyattheinterfacebetweentwomedia(e.g.,

solid/solid,solid/liquid,etc.).Methodologieshavebeendevelopedthatledtothecharacterizationofthedetailed

structureofpolystyrene/glassinterfaces,includingthedeterminationofthealignmentofmoleculargroupsalongthe

polymerbackbone.ClusterionsourceadvancesinSIMSarebeingpursuedtoincreasethesensitivityandreducethe

degreeofsurfacedamagetoallowsub-monolayersensitivitytomolecularspecies.Clustersourcemethodsare

currentlybeingappliedtoseveralpolymerfilmstoassessthegeneralapplicabilityofthemethod.

AlignmentwithNSETGrandChallenges:

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ChemicalScienceandTechnologyLaboratory

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NearfieldMethodsforChemicalAnalysis

ProjectLeader/contact:

 StephanJ.Stranick,301-975-2348

 SurfaceandMicroanalysisScienceDivision,CSTL,Gaithersburg

Approximatestaffing:

 1.0FTE

Fundingsources:

 NIST(100%)

Objective:

Tousenear-fieldopticalmethodstocombinethespatialresolutionofscannedprobeswiththespectral

informationofopticalmethods.

Constituency:

 Industriesutilizingcharacterizationofchemicalnanostructures(fromcatalyststomicroelectronics)

Principalcurrenttasks:

• Toextendnear-fieldmethodstoincorporateRamanscatteringandinfraredabsorptiontodevelop

measurementmethodscapableoffollowingchemicalchangesonthenanoscale.

Additionalinformation:

RecenteffortshavefocusedonaccuratelyassessingsensitivityandresolutionforNSOM-basedinfraredabsorption

usingabroadbandfemtosecondlaserbasedsource,andapplyingthisnanoscale,hyperspectralimaging

instrumentationtopolymerblendsystems.

AlignmentwithNSETGrandChallenges:

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PhysicsLaboratory

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NanoscalePhysicsResearch

ProjectLeader/contact:

 RobertCelotta,301-975-3710,robert.celotta@nist.gov

 ElectronandOpticalPhysicsDivision,PL,Gaithersburg

Approximatestaffing:

 8FTE

Fundingsources:

 NIST(91%),OtherAgencies(9%)

Objective:

Toperformresearchinnanostructuremeasurementscience,includingelectron-surfaceinteractions,surfaceand

multilayermagnetism,laser-focusedatomdeposition,electroninteractiontheory,electronspinpolarization

phenomena,andelectronopticsandinstrumentation.

Constituency:

 Magneticsindustry,particularlymagneticstorageininformationtechnology;electronicsindustry;information

technology,quantumcomputing;materialsindustry

Principalcurrenttasks:

• Magneticimagingofmagneticnanostructuresusinganewscanningelectronmicroscope(SEM)with

polarizationanalysis(SEMPA)

• Developmentofspinpolarizedscanningtunnelingmicroscopy(STM)

• Singleatommanipulationunderopticalcontrol

Additionalinformation:

TheimmediategoaloftheSEMPAworkistoachieveaspatialresolutionof≈10nmformagneticimaging.The

STMeffortisdirectedtowardusingpolarizedphotonsfromaGaAstiptodeterminethedomainstructureofa

magneticnanostructureinanSTMwithveryhighspatialresolution.Finally,theatommanipulationworkhasthe

immediategoalofproducingsingleatomsondemand.

Selectedpublications:

http://physics.nist.gov/Divisions/Div841/Gp3/epg_files/pub.html

AlignmentwithNSETGrandChallenges:

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PhysicsLaboratory

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NanoelectronicsandAutonomousAtomAssembly

ProjectLeader/contact:

 RobertCelotta,301-975-3710,robert.celotta@nist.gov

 ElectronandOpticalPhysicsDivision,PL,Gaithersburg

Approximatestaffing:

 4FTE

Fundingsources:

 NIST(84%),OtherAgencies(16%)

Objective:

Toestablishthefundamentalphysicalprinciplesofimportanceinelectronicnanostructuresthroughtheatomic

scaleinvestigationofquantumelectronics.

Constituency:

 Electronics,magnetics,andmaterialsindustries

Principalcurrenttasks:

• Tofabricateelectronicandmagneticnanostructuresandmeasuretheirphysicalpropertieswithatomic

scaleresolution

Additionalinformation:

Thelaboratorycameon-linewiththesuccessfuloperationofthemainmeasurementsystem,ascanningtunneling

microscope(STM)operatingatcryogenictemperaturesinanintensemagneticfield.ThecryogenicSTMwas

designedandbuiltatNIST.Novelfeaturesofthemicroscopeincludeasolidmolybdenumbodydesign(made

possiblebythehigh-speedmachiningcapabilitiesatNIST),anintegral3-axespositioningsystemofthesampleand

tipwithpicometerprecision,opticalaccesstothesample/tipjunction,andnon-magneticconstruction.The

microscopeisacompletelyself-containedunitthatcanbetranslatedbetweenaroomtemperaturesystemandaliquid

Hecryostat.Themicroscopewasdesignedtohaveaveryhighspatialandenergyresolution.Itcanmeasure

displacementsbelow1pmandresolveelectronenergylevelsseparatedby600μV.Operatinginacryogenic,high

magneticfieldandultra-highvacuumenvironmentsthemicroscopemeasureselectronicandmagneticpropertiesof

nanostructuresonanatom-by-atombasis.Themicroscopehasachievedatomicresolutionmeasurementsonthe

surfaceofCu(111)at2.3Kandinmagneticfieldsupto10T.Thestabilityofthemicroscopeallowsatomic

resolutionmeasurementstoremaininregistrywhilethemagneticfieldisswept.Thelaboratorycontainsfacilitiesfor

thefabricationofsamples,tips,andnanostructures.Thefacilitiesincludetraditionalmolecular-beamepitaxyofIII-V

semiconductors,superconductors,andmagneticmaterials,aswellasbottom-upnanofabricationusingautonomous

atomassembly.

Selectedpublications:

 http://physics.nist.gov/Divisions/Div841/Gp3/epg_files/pub.html

AlignmentwithNSETGrandChallenges:

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PhysicsLaboratory

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LaserTrappingandCooling

ProjectLeader/contact:

BillPhillips,301-975-6554,william.phillips@nist.gov

AtomicPhysicsDivision,PL,Gaithersburg

Approximatestaffing:

 4FTE

Fundingsources:

 NIST(100%)

Objective:

Tostudythephysicsoflasercooling,electromagnetictrapping,andotherradiativemanipulationofneutral

atomsanddielectricparticles.

Constituency:

Biotechnologyandmicroelectronicsindustries.

Principalcurrenttasks:

• Todeveloptechniquesusingopticaltweezers,e.g.,tomeasurestochastically-drivenonandoffratesof

adhesiontobiomoleculesimmobilizedonsurfaces.

• Toperformresearchincoherentatomoptics--atomsreleasedfromaBose-EinsteinCondensate.

Additionalinformation:

Thesefundamentalstudiesareusedtodevelopapplicationstonewkindsofphysicsmeasurementsandprocesses

suchashighresolutionspectroscopy,atomicclocks,atomiccollisions,atomoptics,bio-molecularinteractions,and

atomic-scaleandnano-scalefabrication.ThegroupisleadbyBillPhillips(NobelPrizeinPhysics1997).

Wehavemeasuredthedistributionoftimesforformationanddissociationofantigen-antibodybondsandinitiated

theoreticalmodelingoftheexperimentalresults.Wehaveconstructedanewapparatusincorporatingbothoptical

tweezersandan"opticalscalpel"tocutintobiologicalobjects.Wehaveinitiatedstudiesofliposomemanipulation

usingboththeopticaltweezersandscalpel.

Usingcoherentatomoptics,wehavedemonstratednon-lineareffectswiththesenanoscalebeams,suchasfour-wave

mixing,whichincreasesthepotentialforeventualapplicationofthesebeamsinthecontrolofatomicdepositionon

thenanometerscale.

Selectedpublications:

 http://physics.nist.gov/Divisions/Div842/Gp4/group4.html

AlignmentwithNSETGrandChallenges:

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X  X       X X
PhysicsLaboratory

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AtomicRadiationandPlasma

ProjectLeader/contact:

WolfgangWiese,301-975-3201,wolfgang.wiese@nist.gov

AtomicPhysicsDivision,PL,Gaithersburg

Approximatestaffing:

 1.7FTE

Fundingsources:

 NIST(100%)

Objective:

Toperformexperimentalandtheoreticalresearchonquantumprocessesinatomic,molecular,andnanoscale

systems,includingexplorationofatomicinteractionsinplasmasandwithsurfaces.

Constituency:

Microelectronicsindustryandquantumcomputing

Principalcurrenttasks:

• TheNISTelectronbeamiontrap(EBIT)

• Fundamentalmeasurementsonreferenceplasmastoassistindustryindiagnosingindustrially-important

plasmas,suchasthoseusedinmicro-andnano-scaleetchingprocesses

Additionalinformation:

TheEBITisusedtomakeexotic,highlychargedionsthatcarrylargeamountsofpotentialenergy.Theionsinthese

beamsinteractwithsurfacestocreatenanoscalefeaturesthatarestudiedusingscanningtunnelingmicroscopy

(STM)andatomicforcemicroscopy(AFM)techniques.

Thisprojectalsoincludestheprecisionmeasurementoftheopticalpropertiesofmaterialsproposedforinclusionin

193nmand157nmopticallithographysystems.Thesedevelopmentalactivitiessupporttheintegratedcircuit

(semiconductor)industryintheirtargetofachievingfeaturesizesontheorderof70nm.NISTrecentlymadethe

significantdiscoverythatcalciumfluoride,oneofthefewmaterialsthataretransparentat157nm,isinherently

birefringentinthedeepultraviolet.Thepracticalimportforopticalengineersisthatacalciumfluoridelenswillnot

focusproperlywithout,attheveryleast,morecarefulcontrolofpolarizationthanhasbeenpreviouslyrequired.This

isadifficultproblemgiventhatthereareabout20lenselementsinatypicalwaferstepper.NISTresearchersarealso

pursuingpotentialsolutionstotheprobleminvolvingmixedcrystalstocompensateforthebirefringenceeffect.

Selectedpublications:

 http://physics.nist.gov/Divisions/Div842/Gp3/group3.html

AlignmentwithNSETGrandChallenges:

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X X        X X
PhysicsLaboratory

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QuantumInformationCompetence

ProjectLeader/contact:

 CarlWilliams,301-975-3531,carl.williams@nist.gov

 AtomicPhysicsDivision,PL,Gaithersburg

Approximatestaffing:

 10.6FTE

Fundingsources:

 NIST(58%),OtherAgencies(42%)

Objective:

 TodevelopqubitsystemsbasedonnanoscalesystemsofatomsandionsforQuantumInformation.

Constituency:

Quantumcomputing,dataencryption

Principalcurrenttasks:

• Toeliminateand/orovercometheeffectsofmotionalheating(whichdegradesthefidelityofthedata-bus

qubit)

• Tomultiplexion-trapsystemsbytransferringions(i.e.,quantuminformation)betweenprocessorarrays

• Testspossibleimplementationsofquantumlogicoperationsinopticallyconfinedsystems

• Uniformloadingofopticallatticesiteswithapredeterminednumberofatoms

• Addressingoftheindividualqubitsinanopticallattice

• Entanglementofatomsatlatticesites

• Providingdetailedmodelingofcurrentexperimentalsystems,onidentifyingfundamentallimitationsdueto

effectsofnoiseanddecoherence

• Evaluatingalternativeapproachesforimplementingquantumlogicintrapped-atomsystems

Additionalinformation:

QuantumInformationtouchessomethemostfundamentalquestionsofmodernphysics,andtherearelong-term

benefitstoNISTasthesubjectbearsonfundamentalquestionsofmetrologyandtimekeeping.Butitalsohas

practicalapplicationsofinterestincommunications,cryptography,andcomplexitytheory.NISThasthemost

capableprogramsinthemostpromisingapproachestoQuantumInformation,whichinvolvenanoscalesystemsof

atomsandions.

Selectedpublications:

 http://qubit.nist.gov/index.html

AlignmentwithNSETGrandChallenges:

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PhysicsLaboratory

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BoseCondensationExperiments

ProjectLeader/contact:

EricCornell,303-492-6281,cornell@jila.colorado.edu

QuantumPhysicsDivision,PL,Boulder

Approximatestaffing:

 0.9FTE

Fundingsources:

 NIST(100%)

Objective:

Exploreandexploittheultimatelimitsinlow-temperaturegases–includingbothfermionsandbosons.

Constituency:

Quantumcomputing.

Principalcurrenttasks:

o Probethedecayofso-called"internal"coherenceoftheBosecondensate,therelativequantumphase

betweenthenuclearspin-statesofthecomponentatoms

o PerformexperimentsonBosenovastogaininsightintothenatureofshockwavesinthesesystems

Additionalinformation:

In1995,NISTphysicistsachievedatemperaturefarlowerthanhaseverbeenproducedbeforeandcreatedan

entirelynewstateofmatterpredicteddecadesagobyAlbertEinsteinandIndianphysicistSatyendraNathBose--

calledaBose-Einsteincondensate(BEC).InaBEC,thequantummechanicalprofilesoftheatomsspreadoutand

overlap,causingtheindividualatomstocondenseintoa"superatom"behavingasasingleentity.

Today,thisprojectexploresandexploitstheultimatelimitsinlow-temperaturegases.Thetwobasicspeciesof

atoms--fermionsandbosons--behaveverydifferentlyatultra-lowtemperatures.Eachoffersopportunitiesin

precisionsensingandmetrology,andineachcasetheeffectsofquantummechanics,ordinarilymaskedbyrandom

thermalbehavior,aredominant.

Selectedpublications:

 http://www.bec.nist.gov

AlignmentwithNSETGrandChallenges

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MaterialsScienceandEngineeringLaboratory

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Nanotribology

ProjectLeader/contact:

StephenM.Hsu,301-975-6120,stephen.hsu@nist.gov

CeramicsDivision,MSEL,Gaithersburg

Approximatestaffing:

 5.0FTE

Fundingsources:

 NIST(80%),OtherAgencies(20%)

Objective:

Toprovidemeasurementmethods,instrumentation,andcriticaldataonfriction,stiction,andadhesionon

relevantmaterialstotheusercommunitythroughworkshops,publications,presentations,andcollaborative

researchnetworks.

Constituency:

Manufacturersandusersofmagneticharddisks,sensors,actuators,microelectromechanicalsystems(MEMS),

biomedicaldevices,andintegratedmicrosystems.

Principalcurrenttasks:

• Monomolecularfilmstocontrolthesurfacepropertiesofdevicematerials

• Designofmolecularassemblytocontrolthesurfacepropertiesofmaterials

• Scalinglawsrelatingnmmaterialpropertiesmeasurementstommmeasurements

• Accuratefrictionmeasurementonengineeringsurfaces

• Testmethoddevelopmenttomeasuredurabilityofcarbonovercoatsandlubricantcombinationunderahigh

speedimpactconditiononmagneticharddisks

Additionalinformation:

Smallscalecomponentsfailduetofrictionandadhesion.DurabilityisachiefindustrialconcernforMEMs,

actuators,andmicrosystems.Atthenano-scale,surfaceforces,electrostaticforces,andlongrangeforcesbecome

significantinadditiontomechanicalforces.Nano-frictionisthesumoffriction+adhesion(afunctionofcontact

area).Overcomingandcontrollingfrictionatthenanoscalewillenhancesense-compute-actuateprocessesinreal

time;enablenewdevicesthatrequirecontactmotiontooperate;andprovidelongtermdurabilitycriteriaforsuch

devices

Selectedpublications:

1. “ScalingIssuesintheMeasurementofMonolayerFilms,”S.M.Hsu,P.M.McGuiggan,J.Zhang,Y.Wang,F.

Yin,Y.P.Yeh,andR.S.Gates,in‘Micro-Nano-Tribology’NATOASIseries,editedbyBharatBhushan,

KluwerAcademicPublishers,Netherlands,p.691-710,2001

2. “FrictionMeasurementsofUltra-ThinCarbonOvercoatsinAir,”P.M.McGuiggan,S.M.Hsu,W.Fong,D.

Bogy,andC.S.Bhatia,J.ofTribology,vol.123,1-6,2001.

AlignmentwithNSETGrandChallenges:

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MaterialsScienceandEngineeringLaboratory

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ElectromigrationinInterconnects

ProjectLeader/contact:

RobertKeller,303-497-3853,keller@boulder.nist.gov

MaterialsReliabilityDivision,MSEL,Boulder

Approximatestaffing:

 1.5FTE

Fundingsources:

 NIST(100%)

Objective:

Thisprojectaddressesthemechanismsthatcontrolreliabilityinchip-levelinterconnections.Specificactivities

includestudiesoftime-varyingreliabilitydegradationphenomena,localizedstressmeasurement,and

understandingtheroleoflocalvariationsinmicrostructureinelectromigrationandthermalstress-induced

failure.

Constituency:

 Semiconductorelectronicsindustry

Principalcurrenttasks:

• Investigatenewreliability-limitingphenomenainnanometer-scaleinterconnections

• Developthemeasurementmethodsrequiredtounderstandindetailtheentiredistributionofmicrostructure

Additionalinformation:

Theprojectaddressesreliability-controllingmechanismsandtheresultingpropertieswhich,inturn,willallow

constructionofaccuratedesignmodelsfornewgenerationsofmicroelectronicandoptoelectronicstructures.This

workhasidentifiedanewfailuremechanismforthinfilmmetallicinterconnectsinmicroelectronicdevices.Division

staff,incollaborationwiththeMax-Planck-InstituteforMetalsResearch,haveidentifiedthepresenceofsurface

damageinaluminumalloyandcopperinterconnectsthatwerestressedbyapplicationofanACelectricalcurrent.

Thedamageisconsistentwiththatobservedduetofatigueinbulkstructuralmetals.Cyclicdeformationofsuch

interconnectscanoccurduringnormaluseandpresentsapotentiallyseriousreliabilitythreattoperformanceof

devicesincorporatingsoftpolymericdielectriclayers.

Selectedpublications:

Keller,R.R.,Mönig,R.,Volkert,C.A.,Arzt,E.,Schwaiger,R.,andKraft,O.,“InterconnectFailuredueto

CyclicLoading,”inStress-InducedPhenomenainMetallizations:SixthInternationalWorkshop,American

InstituteofPhysics,inpress(2002).

AlignmentwithNSETGrandChallenges:

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MaterialsScienceandEngineeringLaboratory

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AtomicForceAcousticMicroscopy(AFAM)

ProjectLeader/contact:

DonnaHurley,303-497-3081,hurley@boulder.nist.gov

MaterialsReliabilityDivision,MSEL,Boulder

Approximatestaffing:

 1.0FTE

Fundingsources:

 NIST(100%)

Objective:

Developin-situ,nondestructivemeasurementtechniquestoprobemechanicalpropertiesonthenanoscale.

Constituency:

Microelectronicsindustry,nanoscalemanufacturers,optoelectronicsindustry,magneticrecordingindustry,

biomedicalindustry.

Principalcurrenttasks:

• Adaptexperimentalandanalysistechniquesforimprovedmeasurements(softermaterials,different

cantilevers,etc.)

• Improvesoftwareforrapid,quantitativeimagesandapplytosampleswithmechanicalinhomogeneity

Additionalinformation:

Tocopewithever-decreasinglengthscales,developmentofnewmaterialsmeasurementtoolsiscritical.Onesuch

needisamethodtodeterminemechanicalpropertieswithsubmicrometerresolution.Methodsmustbeableto

provideinformationinimageformtobetterunderstandcomplexstructures,aswellasprovidequantitativeresultson

materialsrangingfromsofttissueorpolymerstohardmetalsorsilicon.AFAMinvolvesacousticallydrivingthe

atomicforcemicroscopy(AFM)cantilevertoexciteitsmechanicalresonanceswhenitisincontactwithasample.

AFAMcouldproveusefulfornondestructivelyevaluatingmaterialsorfabricatedstructureswithvariationsin

mechanicalpropertiesonthenanoscale.Qualitativeimagesofrelativeelasticityhavebeenobtainedbymeasuringthe

cantilever’svibrationamplitudeasthetipwasscannedacrossthesampleatafixedexcitationfrequency.

QuantitativeAFAMinformationhasbeenobtainedbyanalyzingshiftsintheresonantfrequencies.Finiteelement

modelsarebeingdevelopedthroughauniversitycollaborationtoquantifytheAFAMresponseofcantileverswith

nonuniformshapeandtoprobethecomplextip-sampleinteraction.

Selectedpublications:

D.C.Hurley,J.S.Wiehn,J.A.Turner,andP.S.Rice,“Quantitativeelastic-propertyinformationwithacoustic

AFM:measurementsandmodeling,”conferenceproceedingsoftheSPIESymposiumonNDEandReliability

ofMicro-andNanosystems(17-20March2002,SanDiego,CA).

AlignmentwithNSETGrandChallenges:

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MaterialsScienceandEngineeringLaboratory

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MechanicalBehaviorofThinFilms

ProjectLeader/contact:

DaveRead,303-497-3853,read@boulder.nist.gov

MaterialsReliabilityDivision,MSEL,Boulder

Approximatestaffing:

 2.0FTE

Fundingsources:

 NIST(100%)

Objective:

Developmeasurementtechniquesformechanicalbehaviorofmicro-andnanoscalethinfilms.

Constituency:

 Semiconductorelectronicsindustry,microelectronicspackagingindustry

Principalcurrenttasks:

• Extendtesttechniquesfromtheirpresentlevel(1μmthick,10μmwide)tosmallerspecimensthatare

similarinsizetotheconductivetracesusedincontemporaryVLSI(verylargescaleintegration)circuits

(widthsof0.1μmto1μm).

Additionalinformation:

Thinfilms,ubiquitousinmicroelectronicsandphotonics,areformedbyawidevarietyofadvancedfabrication

techniques.Theirmicrostructuresandmechanicalpropertiesaredifferentfromthoseofthebulkmaterial,ifindeed

thematerialactuallyexistsinbulkform.Thegeneralprinciplesofconventionalmechanicaltestingareapplicableto

thinfilms,butspecialequipmentandtechniquesarerequired.Furthermore,inordertoutilizesophisticated

mechanicaldesignapproachesfornewmicro-andnanoscalestructuresanddevices,measurementtechniques

suitableforthematerialsthattakeproperaccountoftheirsizeandconnectivitytotheoverallstructures,areneeded.

Thisyearwesuccessfullyappliedthetechniquetomeasuretwonewtypesofmaterials:aluminuminterconnectlayers

madeinacommercialCMOS(complementarymetaloxidesilicon)fabricationfacility,obtainedthroughtheMOSIS

service,andpolycrystallinesiliconmadeatSandiaNationalLaboratories.

Selectedpublications:

Read,D.T.,Cheng,Y.-W.,Keller,R.R.,andMcColskey,J.D.,“TensilePropertiesofFree-StandingAluminum

ThinFilms,”ScriptaMater.45,583(2001).

AlignmentwithNSETGrandChallenges:

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MaterialsScienceandEngineeringLaboratory

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PackagingReliability

ProjectLeader/contact:

AndrewSlifka,303-497-3744,slifka@boulder.nist.gov

MaterialsReliabilityDivision,MSEL,Boulder

Approximatestaffing:

 1.9FTE

Fundingsources:

 NIST(100%)

Objective:

Developmethodstoexaminematerialsandinterfacesinelectronicpackagingandelucidatedamage

mechanisms.

Constituency:

 Microelectronicspackagingindustry

Principalcurrenttasks:

• Measuremechanicalstraininadvancedpackagingstructuresandembeddedpassivematerialsusing

electron-beammoiré.

• Measureheatflowandthermalpropertiesonincreasinglysmallersizescalesusingthermalinfraredand

atomicforcemicroscopy(AFM)-nanoprobemicroscopy.

Additionalinformation:

Increasedpackagingdensitiesinthemicroelectronicsandothernanotechnology-relatedindustriescanleadto

increasedthermomechanicalfailures.Thenecessarymeasurementmethodsforthermaltransportthroughpackage

structuresandforinterfacialstrainandresultingfailureonthenanoscalearebeingdevelopedinthisproject.Inthe

shortterm,industrywillbeprovidedwithdesignverificationmeasurementsandinthelongtermwithmeasurement

systems.

Selectedpublications:

Drexler,E.S.,“PlasticStraininThermallyCycledFlip-ChipPBGASolderBump,”IEEETrans.Adv.

Packaging23,646(2000).

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BrillouinLightScatteringforThinFilmAnalysis

ProjectLeader/contact:

WardJohnson,303-497-5805,wjohnson@boulder.nist.gov

MaterialsReliabilityDivision,MSEL,Boulder

Approximatestaffing:

 0.8FTE

Fundingsources:

 NIST(100%)

Objective:

Developandapplymethodsformeasuringthedynamicelasticandmagneticpropertiesofthinfilmsatgigahertz

frequencieswithmicron-scaleresolutionlateralresolution,enablingthedeterminationofelasticanddynamic

magneticpropertiesoffilmsasthinasafewnanometers.

Constituency:

Magneticrecording,optoelectronics,andmicroelectronicsindustries.

Principalcurrenttasks:

• ConstructtheBrillouinlightscatteringapparatus.

Additionalinformation:

Brillouinlightscatteringisatechniquetocharacterizebothphononsandmagnonsinthin-filmmaterials.Becauseof

thisdualcapability,itcanprovideuniqueinformationondynamicmagnetoacousticcoupling,whichiscriticaltothe

performanceofmagneticrecordingdevices.Thesensitivitytomid-gigahertzmodes,combinedwiththefactthat

lateralexcitationareasarelimitedonlybythelaserspotsize,providesspatialresolutionsthatareunmatchedby

conventionalultrasonicmethodsandpresentsnumerouspossibilitiesformeasurementsrelatingtotheperformance

andreliabilityofoptoelectronicandmicroelectronicthin-filmdevices.Thehighfrequenciesenablethe

characterizationofspatialvariationsofpropertieswithinathinfilmand,thus,canprovideinformationrelatingto

adhesion,mechanicalsurfacedamage,andchemicalsurfacecontamination.Theshortwavelengthsalsopresentthe

possibilityofobtainingdetailedinformationonperformance-limitinginteractionswithinpatternedthin-film

structures,suchasmagneticandquantumdots.

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MechanicalPropertiesofThinFilmsusingAcousticWaves

ProjectLeader/contact:

VinodTewary,303-497-5753,tewary@boulder.nist.gov

MaterialsReliabilityDivision,MSEL,Boulder

Approximatestaffing:

 1.5FTE

Fundingsources:

 NIST(100%)

Objective:

Developandapplytheoreticalandexperimentalacousticmethodstodeterminetheelasticpropertiesof

advancedanisotropicmaterials.

Constituency:

Semiconductorelectronicsindustry,wearandhardnesscoatingmanufacturers,advancedmaterials

manufacturers

Principalcurrenttasks:

• Applymethodstonewmaterialsystems(e.g.,ultra-low-kdielectrics,nanocomposites).

• CompleteelastodynamicGreen’sfunctionmodelfortwothinanisotropicfilmsonasemiconductorsingle

crystalsubstrate.Applytosurfaceacousticwave(SAW)measurementtoobtainfilmproperties.

• Calculateelastostaticandlattice-staticGreen’sfunctions,includingstressesandstrainsfromastaticpoint

loadormultiscalemodelingofpointdefectsinfilmsorfilm-substrateinterfaces.

• ParticipateinaninternationalcomparisonbetweenSAWandinstrumentedindentationtesting(IIT)data.

Additionalinformation:

Acousticwavepropagationisapowerfultoolfornondestructivelycharacterizingthinfilmscriticaltosuch

applicationsassolid-statedevices,hardnesscoatings,ordiffusionbarriers.Withthismethod,informationabout

propertieslikeYoung’smoduluscanbeobtainedonas-depositedfilmstoprovideprocessinformationor

performancefeedback.Theexperimentalapproachisbasedontheopticalgenerationanddetectionofhighfrequencysurfaceacousticwaves.Akeycomponentisthedevelopmentofanalyticalmodelsbasedonthe

elastodynamicGreen’sfunctionstomodelthepropagationofthewavesinanisotropicfilms.Thisprojectalsohasan

extensiveoutreacheffortinwhichthemodelsaremadeavailablethroughaweb-basedprojectinvolvingeducation

institutionsandindustrialmodelinglaboratories.

Selectedpublications:

1. V.K.Tewary,“Elasticwavepropagationinananisotropicfilmonananisotropicsubstrate:Theoryand

applicationtotitaniumnitridefilmsonsingle-crystalsilicon,”submittedtoJ.Acoust.Soc.Am.(2001).

2. D.C.Hurley,V.K.Tewary,andA.J.Richards,“Surfaceacousticwavemethodstodeterminetheanisotropic

elasticpropertiesofthinfilms,”Meas.Sci.Technol.12,1486(2001).

3. J.R.BergerandV.K.Tewary,“Green’sfunctionsforboundaryelementanalysisofanisotropicbimaterials,”

EngineeringAnalysiswithBoundaryElements25,279(2001).

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CharacterizationofPorousLow-kDielectricConstantThinFilms

ProjectLeader/contact:

 BarryJ.Bauer,301-975-6849,barry.bauer@nist.gov

 PolymersDivision,MSEL,Gaithersburg

Approximatestaffing:

 3.3FTE

Fundingsources:

 NIST(64%),Other(36%)

Objective:

Todevelopalab-basedmetrologyformeasuringthinfilmporesizedistributions.Providestructureand

propertyinformation(composition,porosity,coefficientofthermalexpansion-CTE,averageporesize,

moistureuptake,poreconnectivity)ofnanoporouslow-kthinfilmstoInternationalSematech,material

suppliersandothermicroelectroniccompanies.

Constituency:

 Semiconductorelectronicsindustry,nanoscalemanufacturers

Principalcurrenttasks:

• CharacterizationofcurrentindustriallyrelevantmaterialssubmittedbyInternationalSEMATECH

• Developingadvancedmeasurementmethodsformorethoroughandaccuratefilmcharacterization

Additionalinformation:

Themethodologyutilizingseveralcomplementaryexperimentaltechniquestomeasuretheaverageporeandmatrix

morphologyhasbeenexpandedtoincludeporesizedistributions.Newmethodshavebeendevelopedtomeasure

poreandmatrixmorphologyinfilmshavingcomplexstructureswithanymorphologicaltype.

Selectedpublications:

“Propertiesofnanoporoussilicathinfilmsdeterminedbyhigh-resolutionx-rayreflectivityandsmall-angle

neutronscattering”W.L.Wu,W.E.Wallace,E.K.Lin,G.W.Lynn,C.J.Glinka,E.T.RyanandH.M.Ho,

J.Appl.Phys.,87,1193(2000).

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FluorescentSub-MicronProbeMoleculeswithStarlikeArchitecture

ProjectLeader/contact:

 BarryJ.Bauer,301-975-6849,barry.bauer@nist.gov

 PolymersDivision,MSEL,Gaithersburg

Approximatestaffing:

 1.0FTE

Fundingsources:

 NIST(100%)

Objective:

Todevelopfluorescentpolymericmarkersforuseasprobesofsub-micronfeaturesinmembranes,polymer

blends,andbiomaterials.

Constituency:

 Biomaterialsindustry,polymerprocessingindustry

Principalcurrenttasks:

• Testingfluorescentstarpolymersasprobes

• Developingaseriesoffluorescentstarswithwell-definedsizesandindependentemissionspectra

• Observingthebehaviorofthestarsinimmisciblepolymerblendsusingadvancedopticalmicroscopy

techniques

• Determinewhetherthestarsmigratetophaseboundariestohelpexplainhowhighlybranchedpolymers

affectthepropertiesofimmiscibleblends.

Additionalinformation:

Fluorescentsub-micronprobemoleculesareneededtocharacterizestructuresandtransportpropertiesof

membranes,polymerblends,andbiomaterials.Anidealfluorescentprobewouldexhibitmonodispersesize,versatile

solubility,highluminescence,minimalphotobleaching,andstabilityunderconditionsofvaryingtemperature,

solvent,andpH.Takentogether,thesecriteriaareratherdemanding,makingthedevelopmentofmodelprobesa

challenge.

Selectedpublications:

Hedden,R.;Amis,E.J.;Gröhn,F;Bauer,B.J;"NovelFluorescent'Probe'Molecules:Dendrimer-StarPolymers

ContainingCadmiumSulfideNanoparticles",submittedtoMacromolecules.

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FundamentalStudiesfortheDevelopmentofPhotoresistsforNext-generation

Photolithography:ThinFilmChainConformationandPolymerDynamics

ProjectLeader/contact:

 EricLin,301-975-6743,eric.lin@nist.gov

 PolymersDivision,MSEL,Gaithersburg

Approximatestaffing:

 6.4FTE

Fundingsources:

 NIST(60%),OtherAgencies(30%),Other(10%)

Objective:

Establishanewmethodologytomeasurequantitativelylineedgeandsidewallroughnessoflithographically

producedpatternswithdeepsub-micrometerfeaturesizes.Developandapplyhighspatialresolution

measurementstoobtainuniquedataneededtoenablethedevelopmentofnext-generationphotoresists.

Determinerelativecontributionofmaterialandinterfacialfactorsinphotoresistandanti-reflectivecoating

formulationsonprofilecontrol,criticaldimension,androughness.

Constituency:

 Semiconductorelectronicsindustryandnanoscalemanufacturers

Principalcurrenttasks:

• Small-angleneutronscattering(SANS)measurementsofchainconformationofmodelphotoresistpolymers

• BenchmarkSANSmetrologyofcriticaldimensionandroughnessofpatternedstructures

• Identifycontributingfactorstophotoresistperformanceonbottomanti-reflectivecoatings(BARCs)

• Completemeasurementofdeprotectionreactionwithstandingwaveexposure

• Determinefeasibilityofmodulusmeasurementofpatternedstructures

Additionalinformation:

Photolithographyremainsthedrivingtechnologyinthesemiconductorindustrytofabricateintegratedcircuitswith

everdecreasingfeaturesizes.Today,mostfabricationfacilitiesusechemically-amplified(CA)photoresists,complex

andhighlytunedformulationsofapolymerfilmloadedwithphotoacidgenerators(PAGs)andotheradditives.Upon

exposureofthephotoresistfilmthroughamask,thePAGreleasesacidicprotons.Apost-exposurebakeisthen

appliedandtheacidprotonsdiffuseandcatalyzeadeprotectionreactiononthepolymerthataltersitssolubilityinan

aqueousbasedevelopersolution.Thesereactiveanddiffusiveprocessesmustbeunderstoodandcontrolledatthe

nanometerlengthscaletoeffectivelyfabricateintegratedcircuits.

Selectedpublications:

Wu,W.L.,Lin,E.K.,Lin,Q.H.,Angelopoulos,M.“SmallAngleNeutronScatteringMeasurementsof

NanoscaleLithographicFeatures,”J.Appl.Phys. 88,7298(2000).

AlignmentwithNSETGrandChallenges:

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MaterialsScienceandEngineeringLaboratory

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CombinatorialMethodsforPolymerNanocompositeFilmProperties

ProjectLeader/contact:

 AlamgirKarim,301-975-6588,alamgir.karim@nist.gov

 PolymersDivision,MSEL,Gaithersburg

Approximatestaffing:

1.2FTE

Fundingsources:

 NIST(70%),OtherAgency(30%)

Objective:

Developcombinatorialtechniquestofabricateandcharacterizephasebehaviorofnanocompositepolymer

blendfilms.

Developcombinatorialmethodstomeasurebarrierpropertiesofnanocompositepolymerfilms.

Constituency:

Automotiveindustry,nanoscalesensorsandinstrumentation,nanocompositecompounders

Principalcurrenttasks:

• Phasebehaviordetermination

• Morphologymapping

• Gasandvaporbarrierpropertiesmeasurements

Additionalinformation:

Polymermaterialsareoftenmixedwithinorganicmaterialsinthebulktoenhancepropertiesincludingmechanical,

electrical,thermal,andphysical.Suchpropertyenhancementsareinducednotonlybythephysicalpresenceofthe

fillerbutalsosignificantlybytheinteractionofthepolymerwiththefillerviaalteringthelocalpropertiesofthe

polymermaterial.Inthisregard,recentlylayeredsilicatenanocompositeshavebeenshowntobeeffectivein

modifyingthepolymerpropertiesduetotheirhighsurfaceareaofcontactbetweenthepolymerandthehighaspect

rationanoparticle.Potentialpropertyenhancementsshouldalsooccurinpolymernanocompositethinfilmsdueto

nanoparticleorientationfromfilmconfinementeffects.Weinvestigatetheeffectoflayeredsilicatenanoparticleson

thephasebehaviorofaclassicpolymerblendsystemusinghighthroughputcombinatorialmethods.Methodsto

combinatoriallymeasureoxygenandwatervaporbarrierpropertiesarealsobeingdeveloped.

Selectedpublications:

1. A.Karim*,K.Yurekli,C.Meredith,andE.J.Amis,"CombinatorialMethodsforPolymerMaterialsScience:

PhaseBehaviorofNanocompositeBlendFilms",PolymerEngineering&Science,InPress.

2. V.Ferreiro,G.Schmidt,C.C.Han,A.Karim*,“DispersionandNucleatingEffectsofClayFillersin

NanocompositePolymerFilms”,AmericanChemicalSociety,Symp.Proc.,Vol804,2001.

3. K.A.Barnes,A.Karim*,J.F.Douglas,A.I.Nakatani,H.Gruell,E.J.Amis,“SuppressionofDewettingin

Nanoparticle-FilledPolymerFilms”,Macromolecules,33,4177(2000).

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PolymerNanocomposites

ProjectLeader/contact:

 Dr.ErikHobbie,301-975-6774,erik.hobbie@nist.gov

 PolymersDivision,MSEL,Gaithersburg

Approximatestaffing:

 5.1FTE

Fundingsources:

 NIST(100%)

Objective:

Developcharacterizationmethods,includingmicrostructuremeasurementsandmodelingtools,toconnectthe

structureandalignmentofnanocompositesconsistingofpolymersandnanofillerswiththeprocessing

conditions,andrelatethismicrostructuretobulkmechanicalanddielectricproperties.

Constituency:

 Automotivepartsindustry,polyolefinmaterialsproducers,nanocompositesindustry

Principalcurrenttasks:

• Quantifydispersion,alignment,andstructureviasmallanglescatteringandelectronmicroscopy

• Establishon-linemetrologyforbulkdielectricandmechanicalmeasurements

• Establishatheoreticalandempiricalquantitativelinkbetweennano-structureandbulkpropertiesthatpoints

towardefficientin-line“bulk”measurementsofnano-structure.

• Establishmethodsforrelatingtheconditionsmeasuredandcontrolledduringmaterialprocessingtothe

finalpropertiesofinterestfornanocomposites.

Additionalinformation:

Inorganicfillersfrequentlyareusedtoenhancepolymerproperties.Newattributesmaybeachievedwith

nanoparticulatesprovidedthattheunderlyingscienceisdeveloped.Polymernanocompositesareimportantinmany

diverseindustrialprocesses.Potentialapplicationsderivedfromsynergisticbehaviorsandhybridpropertiesof

polymer-nanoparticlecompositesincludedatastorageandopticalandelectro-rheologicalmaterialsfordisplay

devices.

Selectedpublications:

1. M.M.McBrearty,A.J.Bur,S.C.Roth,“VariationofElectricalPropertieswithExfoliationConditionin

Nanocomposites”ANTEC2002

2. G.Schmidt,A.I.Nakatani,P.D.Butler,andC.C.Han, “ShearOrientationofViscoelasticPolymer-Clay

SolutionsProbedbyFlowBirefringenceandSANS”,Macromolecules,33,7219(2000).

3. C.C.Han,G.Schmidt,A.I.Nakatani,andP.Butler,“ASmallAngleNeutronScatteringStudyonPolymer

ClaySolutions”,ACSPMSE,85,219,Chicago,Sept.(2001).

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GiantMagnetoresistanceMaterials

ProjectLeader/contact:

 WilliamF.Egelhoff,Jr.,301-975-2542,william.egelhoff@nist.gov

 MetallurgyDivision,MSEL,Gaithersburg

Approximatestaffing:

 5.0FTE

Fundingsources:

 NIST(88%),OtherAgencies(12%)

Objective:

Synthesizeandcharacterizenewmagnetoresistivematerialsandstructuresofreduceddimensionalitythrough

theprecisecontrolprovidedbyelectrochemicalandphysicalvapordeposition.

Constituency:

Theultrahighdensitydatastorageindustry,whichneedsimprovedmagnetoresistivematerialsforuseinharddiskdrivesandinmagnetoresistiverandomaccessmemorychips(IBM,Motorola,Honeywell,Seagate,

Maxtor,etc.)

Principalcurrenttasks:

• Optimizingthefabricationofgiantmagnetoresistive(GMR)materialsandmagnetoresistivenanocontacts.

Additionalinformation:

GMRmaterialsarealreadywidelyusedincomputerhard-diskdrives,andemergingmarketsincludenonvolatile

memorychips,magneticfieldsensors,andultrahighspeedisolators.However,continuedprogressrequiresimproved

magnetoresistivematerials.WehelpthesecompanieslearnhowtoproduceimprovedGMRmaterials,andweare

investigatingnoveladvancedconceptsinmagnetoresistivenanocontactsthatmaysomedayreplaceGMRmaterials.

OurworkprovidesU.S.companieswithsignificantcompetitivehelpbyinvestigatingthescienceunderlyingthe

manufacturingprocess.Advancesinthefieldmaymakepossiblenewgenerationsofsmall,rugged,inexpensive

magneticsensorsforawiderangeofapplicationsasdiverseaspositionsensinginautomatedmanufacturingand

magneto-encephlography.Asaresult,withinafewyearswearelikelytobesurroundedinourdailylivesby

productsthatmakeuseofnewmagnetoresistivematerials.

Selectedpublications:

"OxygenasaSurfactantintheGrowthofGMRSpinValves,"W.F.Egelhoff,Jr.,P.J.Chen,C.J.Powell,M.

D.Stiles,R.D.McMichael,J.H.Judy,K.Takano,andA.E.Berkowitz,J.Appl.Phys.,82,6142(1997)

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MagneticPropertiesofNanostructuredMaterials

ProjectLeader/contact:

 RobertD.Shull,301-975-6035,robert.shull@nist.gov

 MetallurgyDivision,MSEL,Gaithersburg

Approximatestaffing:

 2.0FTE

Fundingsources:

 NIST(75%),OtherAgencies(25%)

Objective:

Thisprojectisdirectedtowardunderstandingthemagneticcharacterofmaterialspossessingsomecritical

dimensionatthenanometerlevel.

Constituency:

Magneticdatarecordingindustry,theftcontrolandhealthindustries,refrigerationindustry,andremotelycontrolledsmart-materialsindustry.

Principalcurrenttasks:

• Tomeasurethemagnetocaloriceffectsindysprosium-andholmium-substitutedmagneticgarnet

nanocompositescontainingFe,Co,andNi

• TomeasurethemagneticpropertiesofdifferentcompositionC60/FeandC60/Nithinfilms.

• Tomeasurethemagneticcharacteristicsofnanometer-sizedFe-,Ni-,andCo-encapsulatedparticlesin

polyamidoamine(PAMAM)dendrimerhosts,embeddedinapolystyrenematrix.

• Tomeasurethecompositionanddilutiondependenceofmagneticnanoparticlesincarboxylicacid,water,

andalkylnaphthalene.

Additionalinformation:

Magneticnanocompositespossesscharacteristiclengthscalescomparabletocriticalmagneticlengths,andtherefore

maybeexpectedtopossessmuchdifferentmagneticcharacterthanconventionallarge-lengthscalematerials.

Improvementsinefficiency,magneticcapabilities,andpropertycombinationsareexpected.Inorderforindustryto

utilizethesematerialsinmagneticrecording,cooling,drugdelivery,andnano-electro-mechanicalsystems(NEMS),

theircharacterneedstobeunderstood.Wehave15yearsofexpertiseintheareaofmagneticnanocomposites.

Selectedpublications:

1. “FormationofNanomagneticThinFilmsbyDispersedFullerenes,”L.A.Zheng,B.M.Lairson,E.V.Barrera,

andR.D.Shull,Appl.PhysicsLetters 77,No.20,3242(2000).

2. "MagnetocaloricEffectofFerromagneticParticles,"R.D.Shull,IEEETrans.onMagnetics 29,No.6,2614

(1993).

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MagneticDomainMotioninNanostructuredMaterials

ProjectLeader/contact:

 RobertD.Shull,301-975-6035,robert.shull@nist.gov

 MetallurgyDivision,MSEL,Gaithersburg

Approximatestaffing:

 2.25FTE

FundingSources:

 NIST(100%)

Objective:

Todemonstratetheutilityofaninexpensivemagneto-opticaltoolforobservingmagneticdomains,andtheir

dynamics,innanostructuredmaterialsinordertodeterminethemechanismwherebyamaterialreversesits

magnetizationvectorupontheapplicationofareversedexternalmagneticfield.Suchinformationiscrucialto

understandingthematerial’smagnetichysteresisloop,apropertythatcontrolsapplicationofthematerial.

Constituency:

Magneticrecordingindustry,magneticsensorcompanies,permanentmagnetmanufacturers

Principalcurrenttasks:

• ObservationoftheremagnetizationinanFeMn/NiFeantiferromagnet/ferromagnetexchange-biasedcouple

ac-demagnetizedathightemperatureinordertoobservedomaineffectsintheantiferromagnet.

• ObservationoftheremagnetizationmechanisminaSmCo/Fehard/softferromagnetcoupleinorderto

verifyacoherentrotationmodelproposed10yearsago,butasyetunverified.

• Observationoftheeffectsofpinholesinthenanometer-thickRulayerseparatingtwoNiFeferromagnetic

layers,amultiplayerstructurenowbeingproposedbyIBMforthenextgenerationrecordingmedia.

AdditionalInformation:

Observationofthedynamicsofmagneticdomainsisverydifficult,andfewtechniquesallowonetodoit.The

Magneto-OpticalIndicatorFilm(MOIF)techniqueisaninexpensivemethodforstudyingdomaindynamicsthatwas

developedbyresearchersfromtheRussianAcademyofSciencesandNIST.Itiswellsuitedforinvestigatingthe

newnanostructuredmagneticmaterialsbeingdevelopedfornumerousapplications,includingmagneticrecording

mediaandsensors.

SelectedPublications:

1. “SpinSpringBehaviorinExchangeCoupledSoftandHigh-CoercivityHardFerromagnets,”R.D.Shull,A.J.

Shapiro,V.S.Gornakov,V.I.Nikitenko,J.S.Jiang,H.Kaper,G.Leaf,andS.D.Bader,IEEETransactionson

Magnetics37,No.4,2576(2001).

2. “Anisotropy-DependentMacroscopicDomainStructureinWedged-Permalloy/Uniform-FeMnBilayers,”Kai

Liu,S.M.Zhou,C.L.Chien,V.I.Nikitenko,V.S.Gornakov,A.J.Shapiro,andR.D.Shull,J.Appl.Phys.87

(9),5052(2000).

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NanoscaleMagneticSRMsandCharacterizationTechniques

ProjectLeader/contact:

• RobertD.Shull,301-975-6035,robert.shull@nist.gov

MetallurgyDivision,MSEL,Gaithersburg

• DavidP.Pappas,303-497-3374,pappas@boulder.nist.gov

MagneticTechnologyDivision,EEEL,Boulder

Approximatestaffing:

2.0FTE

FundingSources:

 NIST(100%)

Objective:

Thisprojectinvolvesmeasurementandcharacterizationofnanoscalemagneticmaterials.Thisactivityincludes

thepreparationofstandardreferencematerials,whereappropriate,inordertoacceleratethedevelopmentand

applicationofthisclassofadvancedmaterials.

Constituency:

Magneticrecordingindustry,magneticsensorcompanies,permanentmagnetmanufacturers,magnetic

measuringequipmentmanufacturers

Principalcurrenttasks:

• Investigatingfeasibilityofmakingathinfilmmagneticstandard.

• Evaluationofathinfilmsuperconductingcoilmagneticinductancestandard.

• MeasurementofmagneticaftereffectandtimedependenceinnanoparticulateFeontapemagneticrecording

media.

• Preisachmodelingofhysteresisloopsofnanoparticulaterecordingmedia.

AdditionalInformation:

Magneticmaterialsarewidelyusedintransformers,motors,andrecordingdevices.Thisgrouphas15yearsof

expertiseinthemeasurementandcharacterizationofnanoscalemagneticmaterials,andhasdevelopedand

constructedanovelmagnetometertomeasureamaterial’s“AbsoluteMagneticMoment.”Inaddition,thisgrouphas

anexpertiseincorrelatingmaterialstructureandproperties.

SelectedPublications:

“AbsoluteMagneticMomentMeasurementsofNickelSpheres,”R.D.Shull,R.D.McMichael,L.J.

Swartzendruber,andS.D.Leigh,J.Appl.Phys.87,No.9,5992(2000).

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MagneticDynamicsandMicromagneticsofThinFilm

ProjectLeader/contact:

 RobertD.McMichael,301-975-5121,robert.mcmichael@nist.gov

 MetallurgyDivision,MSEL,Gaithersburg

Approximatestaffing:

 2.0FTE

Fundingsources:

 NIST(100%)

Objective:

Toprovidemodelsofmagnetizationdamping,dynamicmeasurementmethods,materialsdata,and

micromagneticmodelingtoolsandbenchmarks

Constituency:

Magneticdatastorageindustry

Principalcurrenttasks:

o Toidentifyanddescribethephysicalmechanismsthatgovernmagnetizationdampingandtodevelopways

tomeasureandcontrolthem.

Additionalinformation:

Formanydeviceapplicationsofmagneticthinfilms,itisbecomingincreasinglyimportanttocontrolthe

magnetizationonsub-micronandsub-nanosecondtimescales.Thedampingpropertiesofthemagnetizationare

especiallyimportantforhighdatarateapplications,andthedynamicbehaviorofsubmicronmagneticparticlesare

importantforhighdensitydatastorage.Thedampingmechanismsthatcouplethemagnetizationtothethermalbath

alsocausemagnetizationfluctuationsthatarebecominganimportantsourceofnoiseinnext-generationreadheads

andamechanismfordatalossinmedia.

Selectedpublications:

1. http://www.ctcms.nist.gov/~rdm/mumag.html.

2. R.D.McMichael,M.J.Donahue,D.G.PorterandJ.Eicke,“Switchingdynamicsandcriticalbehaviorof

standardproblemNo.4,”J.Appl.Phys.,89,7603(2001).

3. R.D.McMichael,M.D.Stiles,P.J.ChenandW.F.Egelhoff,Jr.,“Ferromagneticresonancelinewidthinthin

filmscoupledtoNiO”J.Appl.Phys.,83,7037(1998).

4. R.D.McMichaelandAndrewKunz,“Calculationofdampingratesinthininhomogeneousferromagneticfilms

duetocouplingtolatticevibrations,”J.Appl.Phys.,tobepublished(2002).

5. R.D.McMichael,D.J.Twisselmann,J.E.Bonevich,P.J.Chen,W.F.Egelhoff,Jr.,andS.E.Russek,

“Ferromagneticresonancemodeinteractionsinperiodicallyperturbedfilms,”J.Appl.Phys.,tobepublished

(2002).

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NeutronMethodsforNanotechnology

ProjectLeader/contact:

• JohnJ.Rush,301-975-6231,john.rush@nist.gov

• PatrickGallagher,301-975-4191,patrick.gallagher@nist.gov

NISTCenterforNeutronResearch(NCNR),NIST,Gaithersburg

Approximatestaffing:

 6.0FTE

Fundingsources:

 NIST(67%),OtherAgencies(33%)

Objective:

Provideuniquenationalcapabilitiesandinstrumentationforneutronresearchonnanoscalestructure

(1nm–100nm)anddynamics,whichcontrolpropertiesandnanotechnologyapplicationsof

materialsandmacromolecules.

Constituency:

Over40ofU.S.universitiesandindustriesandthreeNISTlaboratoriespursuingnanoscalescience

andtechnologyresearchatNCNR

Principalcurrenttasks

• Over100NISTandoutsideU.S.researchersareengagedinresearchaimedatprobing

nanostructureinnewmaterialsandassemblageswhicharekeytonewdevelopment,e.g.in

magneticstoragemediaandspinelectronics,nanocompositesforautomotiveports,thinfilm

insulatorsfornanoscaleintegratedcircuits,biomimeticmembranesforbiosensorapplications,

tailoredmolecularstructuresformolecularsieves,catalystsandfueladditivesandnanoscopic

molecularassembliesfordrugdelivery.

• NCNRisworkingtodevelopnewmethodsanddevicestoimprovesensitivityofneutronprobes

fornanostructuremeasurementbyanorderofmagnitude.

Additionalinformation:

DevelopmentsattheNCNRoverthepastdecadeprovideU.S.nanoscalescienceandtechnologywith

timelyaccesstostate-of-the-artneutronresearchcapabilities.Moreopportunitiestomeetrapidlyemerging

nanomeasurementopportunitiesarebeingexplored.

Selectedpublications:

Over50publicationsinlast2years

AlignmentwithNSETGrandChallenges:

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MaterialsScienceandEngineeringLaboratory

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NeutronStudiesofNanoscaleFilmsandMultilayers

ProjectLeader/contact:

ChuckMajkrzak,301-975-5251,charles.majkrzak@nist.gov

NISTCenterforNeutronResearch(NCNR),NIST,Gaithersburg

Approximatestaffing:

 5.0FTE

Fundingsources:

 NIST(90%),OtherAgencies(10%)

Objective:

Measurekeynanoscalemagneticandmacromolecularstructuresinthinfilmsandmultilayerstosupporttheir

tailoringanddevelopment,e.g.foradvancedmagneticstorage,microelectronic,andbiosensorapplications.

Constituency:

Communications,electronics,andbiotechnologyindustries,anduniversities

Principalcurrenttasks

• Extendmagneticthinfilmsstudiestonextgenerationmagneticsemiconductorstorevealtheroleof

magneticinteractions,whichwillcontrolthespindependentpropertiesoffuturespintronicdevices.

• Measurementofpolymerinterdiffusionaggregationandgrowthofmetalnanoparticlesinthinfilmsfor

microelectronicandcoatingapplications.

• Developtheoreticalandexperimentalmethodstoprovidedirectinversionofphasesensitivereflectivity

measurementsforaccuratenanoscalestructuredetermination.

Additionalinformation:

NCNRscientistshavedevelopedpowerfulneutronreflectometryprobesthatprovideessentialnanoscalestructure

informationthatcannotbemeasuredanyotherway.

Selectedpublications:

1. H.Yim,M.Kent,R.Ivkov,S.Satija,J.Majewski,“StructureWithinThinEpoxyFilmsRevealedbySolvent

Swelling:ANeutronReflectivityStudy”,Macromolecules 34,7932(2000).

2. C.F.Majkrzak,N.F.Berk,S.Krueger,J.A.Dura,M.Tarek,D.Tobias,V.Silin,C.W.Meuse,J.Woodward,

A.L.Plant,“First-PrinciplesDeterminationofHybridBilayerMembraneStructurebyPhase-SensitiveNeutron

Reflectometry”,Biophys.J. 79,3330(2000).

3. Borchers,J.A.,Ijiri,Y.,Lind,D.M.,Ivanov,P.G.,Erwin,R.W.,Qasba,A.,Lee,S.-H.,O’Donovan,K.V.,

Dender,D.C.,“DetectionofField-DependentAntiferromagneticDomainsinExchange-BiasedFe3O4/NiO

Superlattices”,Appl.Phys.Lett. 77(25),4187(2000).

AlignmentwithNSETGrandChallenges:

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MaterialsScienceandEngineeringLaboratory

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NeutronScatteringInvestigationsofNanocomposites,NanotubesandSelfAssembled

Structures

ProjectLeader/contact:

JohnJ.Rush,301-975-6231,john.rush@nist.gov

NISTCenterforNeutronResearch(NCNR),NIST,Gaithersburg

Approximatestaffing:

 2.5FTE

Fundingsources:

 NIST(100%)

Objective:

Providecriticalinformationbysmall-angleneutronscattering(SANS)anddiffractionmethodson

nanostructuresinbulknanocompositesfornextgenerationstructuralmaterials,carbonnanotubesformolecular

electronics,andnewself-assembledmacromoleculesstructuresforenvironmentalcleanup.Firstprinciples

computationalmethodsareakeytoprogressinpredictingandtailoringnanotubeproperties.

Constituency:

Chemical,transportationandmicroelectronicssectors

Principalcurrenttasks

• Useultra-highresolutionsmall-angleneutronscattering(USANS)toverifyandcalibratetherelationship

betweenthecoloroforganicallymodifiedclaysdispersedinpolymermatricesandthedegreeof

exfoliationoftheclayparticles,whichisstronglycorrelatedwithimprovedmechanicalandfireretardant

properties.

• Combinetransmissionelectronmicroscopy(TEM),SANS,anddynamicrheologytodevelopadetailed

structuralandmechanicalmodelofapolymerizedgel.Characterizingthepropertiesofthisnewmicellar

gelmaterialwillfosteritscommercialapplications,e.g.inwastewatercleanup.

• Explorenewroutestosynthesizeandcharacterizefunctionalizedderivativesofcarbonnanotubes,suchas

hydrogenandmetal-coatedtubes.

Additionalinformation:

TheNIST/NCNRsmallanglescatteringinstrumentscoverarangefrom1nmto1000nmandthuscanuniquely

probemanykeyfeaturesinmolecularandparticulatenanostructures.

Selectedpublications:

1. T.Yildirim,O.Gulseren,C.Kilic,S.Ciraci,“Pressure-InducedInterlinkingofCarbonNanotubes”,Phys.Rev.

B 62,12648(2000).

2. D.L.Ho,R.M.Briber,C.J.Glinka,“CharacterizationofOrganicallyModifiedClaysUsingScatteringand

MicroscopyTechniques”,Chem.Mater. 13(5),1923(2001).

3. S.R.Kline,“StructuralEvolutionDuringMicellePolymerization”,J.Appl.Crystallogr. 33(1),618(2000).

AlignmentwithNSETGrandChallenges:

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BuildingandFireResearchLaboratory

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CharacterizationofPolymerSurfaces

ProjectLeader/contact:

MarkVanLandingham,301-975-4686,mark.vanlandingham@nist.gov

BuildingMaterialsDivision,BFRL,Gaithersburg

Approximatestaffing:

1.2FTE

Fundingsources:

 NIST(92%),Other(8%)

Objective:

Todevelopadvancedmeasurementtechniquesforevaluatingsurfacemechanicalpropertiesofpolymeric

materialsasafunctionoftimeandloadingrate,torelatematerialspropertiestodeformationbehaviorunder

complexstressstates,andtoassesstheimpactofsurfacedeformationonappearance.

Constituency:

Thisprojectaddressesissuesofmicromechanicalandnanomechanicalbehaviorofpolymersthatareapplicable

toanumberofindustries,includingbuildingandconstruction,automotive,bulkplastics,andmicroelectronics.

Principalcurrenttasks

• Developtechniquesusingnanoindentationtomeasureelastic,viscoelastic,andviscoplasticresponsesof

amorphousandsemicrystallinehomopolymersystems.

Additionalinformation:

ThisprojecthasbecometheBFRL-ledportionoftheInterfaces/InterphasesConsortiumthatwasestablishedin

December2000.IntheConsortium,BFRLpartnerswithMSELandCSTL,andthreeprivatecompanies.Results

haveshownthefeasibilityofmechanicalpropertymeasurementsonpolymericmaterialsusingatomicforce

microscopyanddepth-sensinginstrumentation.Informationhasalsobeenobtainedontheeffectsofprobetipshape

anditsimportancetothequantitativedeterminationofmechanicalpropertiesfromnanoscaleindentation

measurements.Modelsofopticalscatteringhavebeendevelopedforclearcoatingswithvaryingsurfacetopography

thatcorrelatewellwithexperimentalmeasurements.Areviewoftheliteratureonmarringofsurfaceshasbeen

completed,butpublicationisdelayedforsixmonthsinaccordwithrequirementsoftheConsortium.

Selectedpublications:

M.R.VanLandingham,J.S.Villarrubia,W.F.Guthrie,G.F.Meyers,"NanoindentationofPolymers:An

Overview,"inMacromolecularSymposia 167:AdvancesinScanningProbeMicroscopyofPolymers,V.V.

TsukrukandN.D.Spencer,eds.(2001)15-44.

AlignmentwithNSETGrandChallenges

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High-PerformancePolymericBuildingMaterials:

Polymer-MetalOxideNanocompositeSystems

ProjectLeader/contact:

JonathanMartin,301-975-6717,jonathan.martin@nist.gov

BuildingMaterialsDivision,BFRL,Gaithersburg

Approximatestaffing:

3.8FTE

Fundingsources:

 NIST(68%),OtherAgencies(32%)

Objective:

Todevelopmeasurementtechnologyrelatedtotheuseofmetaloxidenanoparticles(TiO2,ZnO)inpolymeric

buildingmaterials;todevelopdispersionmeasurementmethodsusingacombinationoflightandneutron

scatteringmetrologies;toinvestigaterelationshipsbetweendispersionandbulkandnanoscalemechanicaland

opticalproperties;todevelopmethodstomeasurepropertiesrelatedtothephotoreactivityofthenanoparticles.

Constituency:

Thisprojectaddressesissuesrelevanttobuildingandconstructionmaterials,automotivecoatings,andbulk

plastics,withpotentialimpactstothehealthcareindustry.

Principalcurrenttasks

• Investigatetechniquestodispersepigmentaryandnanosizeparticlesinpolymericbinders;developand

evaluatescatteringmethodsforquantitativecharacterizationofdispersion.

Additionalinformation:

Thisisanewresearchprojectasoffiscalyear2002.

AlignmentwithNSETGrandChallenges

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MeasurementScienceforOpticalReflectanceScattering

ProjectLeader/contact:

 MaryMcKnight,301-975-6714,mary.mcknight@nist.gov

 BuildingMaterialsDivision,BFRL,Gaithersburg

Approximatestaffing:

0.7FTE

Fundingsources:

 NIST(100%)

Objective:

Todevelopimprovedmeasurementmethodsandmodelsfordescribingandpredictingtheopticalreflectance

andlightscatteringofmaterials.

Constituency:

Automotive,coatings,plastics,buildingandconstruction,andcomputergraphicsindustries.

Principalcurrenttasks

• Completecharacterizationofthemicrostructureofmetallic-flakedcoatingsjointlywithMEL

• Developlightscatteringlaboratoryforcharacterizingmicrostructureofclearandpigmentedcoatings

• Accuratelyrendertheappearanceofobjectscoatedwithametallic-flakepaint.

Additionalinformation:

ThemaincontributiontonanotechnologyhasbeentherecentlybegunuseoftheNISTreactortostudythedegreeof

dispersionofsubmicrometerparticlesincoatings.

Selectedpublications:

L.Sung,M.E.Nadal,M.E.McKnight,E.Marx,andB.Laurenti,“OpticalReflectanceofMetallicCoatings:

EffectofAluminumFlakeOrientation,”submittedtoJCT:JournalofCoatingsTechnology(2001).

AlignmentwithNSETGrandChallenges:

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NewFlameRetardantPrinciples:

CondensedPhaseProcesses

DemonstrationandProductsTransfer

Pre-FlamingBehaviorofSolidMaterials

ProjectLeader/contact:

 JeffGilman,301-975-6573,jeffrey.gilman@nist.gov

 FireResearchDivision,BFRL,Gaithersburg

Approximatestaffing:

 6.5FTE

Fundingsources:

 NIST(70%),OtherAgencies(20%),Other(10%)

Objective:

Toreducetheflammabilityofcommoditypolymerswhilesimultaneouslyimprovingtheirphysicalproperties.

Constituency:

Plasticsandflameretardantproductproducers

Principalcurrenttasks

• Developseveralstructure-propertyrelationshipsforflameretardantpolymernanocomposites

• Develophighthroughput(HT)methodstoacceleratethepaceofresearchinthisprogram

Additionalinformation:

InFY2001,workwascompletedwithinourNIST-IndustryNanocompositesConsortiuminwhichthecharforming

propertiesofnano-claysinpolystyrenewerecharacterized.IncooperationwiththePolymersDivision,wealso

developednewquantitativeNMRmethodstocharacterizenano-scalemixingandprocessingdegradationof

nanocomposites.WorkingwiththeNavalResearchLab,wedevelopednewclaytreatmentswithgreaterthermal

stabilitythanotherconventionaltreatments.AspartoftheNISTCombinatorialMethodsCenter,wearedeveloping

newhighthroughputmethodsforcharacterizingtheflammabilityandphysicalpropertiesofpolymers.

Selectedpublications:

1. D.L.VanderHart,A.Asano,andJ.W.Gilman,Macromolecules,34,3819,(2001).

2. J.W.Gilman,T.Kashiwagi,A.B.Morgan,R.Harris,Jr.,L.Brassell,M.VanLandingham,andC.L.Jackson,

NISTIR6531,July2000.

3. J.W.Gilman,T.Kashiwagi,“Polymer-LayeredSilicateNanocompositeswithConventionalFlameRetardants”

inPolymer-ClayNanocomposites,eds.:T.Pinnavaia,G.Beall,WileyandSonsLtd,WestSussex,2000.

AlignmentwithNSETGrandChallenges:

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BuildingandFireResearchLaboratory

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ParticleMeasurementsinSupportoftheSemiconductorIndustry

ProjectLeader/contact:

GeorgeMulholland-301-975-6695,george.mulholland@nist.gov

FireResearchDivision,BFRL,Gaithersburg

Approximatestaffing:

0.8FTE

Fundingsources:

 NIST(92%),Other(8%)

Objective:

Developfacilitiestoaccuratelymeasureparticlesizeandtodepositmonosizeparticlesoncalibrationartifacts

toreducetheuncertaintyinthesizesofparticlesusedbythesemiconductorindustrytocalibratescanning

surfaceinspectionsystems(SSIS).

Constituency:

Semiconductorelectronicsindustry

Principalcurrenttasks

Developparticlesizingandgenerationcapabilitiesforparticlesassmallas10nmusingdifferentialelectrical

mobilityanalysisforsizingandelectrosprayforaerosolgeneration.

Additionalinformation:

TheInternationalTechnologyRoadmapforSemiconductors(ITRS)identifiesthedetectionandcharacterizationof

defectsandparticlesonwaferstobeapotentiallyshow-stoppingbarriertodeviceminiaturization.Theroadmap

specifiesthatby2005and30nmparticlesmustbedetectableonbaresilicon.ThemanufacturersoftheSSISrequire

lowuncertaintycalibrationparticlesforuseincalibratingsurfacescanners.

Amajorfocushasbeendevelopmentofthedifferentialmobilityanalysis(DMA)methodforaccuratelysizing

monosizepolystyrenespheres.ThisworktogetherwithaSSISroundrobinhasprovidedevidencethatcurrentSSIS

measurementshaveanunacceptablylargeuncertaintyforparticlesizesinthe90nmto100nmsizerange.In

addition,aspraypyrolysismethodforgeneratingpurecoppersphereswithdiametersrangingfrom100nmto

200nmhasbeendevelopedincollaborationwiththeUniversityofMinnesota.Thesesphereswillbeusedto

validatetheparticlescatteringtheoryforparticlesonasiliconsurface.

SelectedPublications:

G.W.MulhollandandB.Bauer,“NanometerCalibrationParticles:WhatisAvailableandWhatisNeeded?,”

J.NanoparticleResearch 2,5–15(2000).

AlignmentwithNSETGrandChallenges:

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BuildingandFireResearchLaboratory

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ANISTKineticDataBaseforPAHReactionsandSootParticleInceptionDuring

Combustion

ProjectLeader/contact:

GeorgeMulholland-301-975-6695,george.mulholland@nist.gov

FireResearchDivision,BFRL,Gaithersburg

Approximatestaffing:

3.5FTE(including0.25fromSandia,0.5fromAFRL,and0.75contractor)

Fundingsources:

 NIST(20%),OtherAgencies(80%)

Objective:

Todevelopacriticallyevaluated,archivalgasphasechemicalkineticdatabasedescribingthetransformationof

fuelmoleculestoPAH(polycyclicaromatichydrocarbons)andthefirstquantitativesootparticleinception

modelbasedonexperiments.

Constituency:

Gasturbineanddieselenginemanufacturers

Principalcurrenttasks

• Fabricateawell-stirredreactor,developopticaldiagnosticforsootinception,assembleheptanepyrolysis

andPAHgrowthkineticdatabases,developsoot/PAHsamplingmethods,andmeasurePAHratesinshock

tube.

Additionalinformation:

Militarygasturbineanddieselengines=>emitsootandPAH.Engineparticulatemitigationstrategiesneedsootand

PAHmodelsforinclusionincomputer-basedenginedesignandforfueladditivedevelopment.

NISTisprovidinganewapproachtounderstandingsootinceptionbyfocusinggasphaseexpertiseandparticle

phaseexpertiseonthenucleationofacondensedphase(particle)fromlargePAHmolecules.Thestaffwillbe

makinguseofnewexperimentalfacilitiesfordetectingandsizingnanometersizeparticles,formeasuringPAH/soot

kineticsusingimprovedwell-stirred-reactordesignwithadditiveinjectioncapabilities,andnewcomputationaltools

forthermodynamicandkineticparametersforcombustionspeciesincludingradicalsandPAHs.

SelectedPublications:

Blevins,L.G.,Mulholland,G.W.,Benner,B.A.,Jr.,Fletcher, R.A.,andSteel,E.B.,“CompositionandShape

ofEarlySoot CollectedfromInverseFlames,”Fall TechnicalMeeting,WesternStatesSection,The

CombustionInstitute, SaltLakeCity,UT,October2001.

AlignmentwithNSETGrandChallenges:

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References



[1]NationalNanotechnologyInitiative:LeadingtotheNextIndustrialRevolution,NSTCCommitteeon

Technology,SubcommitteeonNanoscaleScience,EngineeringandTechnology,February2000.

[2]NanotechnologyResearchDirections:IWGNWorkshopReport:VisionforNanotechnologyR&Din

theNextDecade,NSTCCommitteeonTechnology,InteragencyWorkingGrouponNanoscience,

EngineeringandTechnology(IWGN),InternationalTechnologyResearchInstitute,WorldTechnology

(WTEC)Division,LoyolaCollege,September1999.

[3]NationalNanotechnologyInitiative:TheInitiativeandItsImplementationPlan,NSTCCommitteeon

Technology,SubcommitteeonNanoscaleScience,EngineeringandTechnology,July2000,pp.19-20.

[4]SeetheNNIwebsiteathttp://www.nano.gov