NBSIR 87-3577

Center for Electronics and

Electrical Engineering

Technical

Progress

Bulletin

Covering Center Programs,

October to December 1986

with 1987 CEEE Events Calendar

July 1987

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899

QC

100

0f cc

• U56 ht. #87-3577

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1987 vu o» c.2
INTRODUCTION TO JUNE 1987 ISSUE OF THE CEEE TECHNICAL PROGRESS BULLETIN

This is the seventeenth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and Electrical Engineering. This issue of the CEEE Technical Progress Bulletin covers the

fourth quarter of calendar year 1 986.

Organization of Bulletin : This issue contains abstracts for all Center papers re- leased for publication by NBS in the quarter and citations and abstracts for Center

papers published in the quarter. Entries are arranged by technical topic as identified in the table of contents and alphabetically by first author under each subheading within each topic. Unpublished papers appear under the subheading "Released for

Publication". Papers published in the quarter appear under the subheading "Recently

Published". Following each abstract is the name and telephone number of the individual to contact for more information on the topic (usually the first author) . This

issue also includes a calendar of Center conferences and workshops planned for calendar year 1987 and a list of sponsors of the work.

Center for Electronics and Electrical Engineering : Center programs provide national

reference standards, measurement methods, supporting theory and data, and traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U. S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor Technology Program, carried out by the Semiconductor Electronics Division in Gaithersburg,

MD, and the Signals and Systems Metrology Program, carried out by the Electrosystems

Division in Gaithersburg and the Electromagnetic Fields and Electromagnetic

Technology Divisions in Boulder, CO. Key contacts in the Center are given on the

back cover; readers are encouraged to contact any of these individuals for further

information. To request a subscription or for more information on the Bulletin , write to CEEE Technical Progress Bulletin, National Bureau of Standards, Metrology

Building, Room B-358, Gaithersburg, MD 20899 or call (301) 975-2220.

Center sponsors : The Center Programs are sponsored by the National Bureau of Standards and a number of other organizations, in both the Federal and private sectors;

these are identified on page 25.

Note on Publication Lists : Guides to earlier as well as recent work are the publication lists covering the work of each division. These lists are revised and reissued

on an approximately annual basis and are available from the originating division.

The current set is identified in the Additional Information section, page 22.
CEEE Technical Progress Bulletin - June 1987

TABLE OF CONTENTS

INTRODUCTION

Aaaonai bureau of Standards

Gaithersburg, Maryland 2£899

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&C IOO Page 1 *1Tifu

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SEMICONDUCTOR TECHNOLOGY PROGRAM 2 Silicon Materials 2 Dimensional Metrology 2 Packaging 4

Integrated Circuit Test Structures 5

Device Physics and Modeling 5

Radiation Effects . 7

Insulators and Interfaces ... 8

Other Semiconductor Topics 8

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 10

Waveform Metrology 10

Cryoelectronic Metrology 11

Antenna Metrology 13

Laser Metrology 14

Microwave and Millimeter-Wave Metrology 14

Optical Fiber Metrology 15

Electro-Optic Metrology ...16

Other Fast Signal Topics 17

ELECTRICAL SYSTEMS 17

Power Systems Metrology 17

Superconductors 18

Magnetic Materials and Measurements 20

ELECTROMAGNETIC INTERFERENCE 20

Radiated Electromagnetic Interference 20

Conducted Electromagnetic Interference 22

ADDITIONAL INFORMATION 22

1987 CEEE CALENDAR 2 3

SPONSOR LIST 2 5

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 2 CEEE Technical Progress Bulletin - June 1987

SEMICONDUCTOR TECHNOLOGY

Silicon Materials

Released for Publication

Bennett, H.S., Indirect Energy Gap of

Si , Doping Dependence

.

The doping dependence of the indirect

energy gap of silicon is reviewed for

the Electronic Materials Information

Service of IEE (London) . This review is

a guide with commentary to assist readers in selecting which values are best

for their applications. Our state of

knowledge in this area is such that in

many cases the intended application for

the data on bandgap changes determines

the appropriate values to use. Data

from interpreting both electrical and

optical measurements are given.

[Contact: Herbert S. Bennett, (301)

975-2079]

Carver, G.P. , Kang, S.S., Ehrstein,

J.R., and Novotny, D.B., Well-Defined

Contacts Produce Accurate Spreading

Resistance Measurements.

Values of silicon resistivity calculated

from spreading resistance measurements

agree with values of resistivity determined from four-point probe measurements

over a range of dopant density from 9 x 10 lLf to 2 x 10 17 cm- 3. Th e spreading

resistance resistivity values were determined solely using a mathematical

expression based upon a simple geometrical model, without the need for a separate calibration. The measurements were

made using aluminum-silicon contacts

having a well-defined geometry. Arrays

of such contacts were also used to characterize local resistivity variations.

Two-contact spreading resistance measurements are shown to underestimate the

amplitude of resistivity variations

compared to one-contact measurements.

[Contact: Gary P. Carver, (301)

975-2091

]

Dimensional Metrology

Released for Publication

Larrabee, R.D., Submicrometer Optical

and SEM Linewidth Metrology, to be

published in the Proceedings of the

1 987 Measurement Science Conference,

Irvine, California, January 29-30,

1 987.

The feature sizes on modern integrated

circuits are presently taxing the ability of visible-light optical systems to

perform the necessary dimensional measurements required during their production. With the shrinking of feature

dimensions to the micrometer and submicrometer level, diffraction and. finite

wavelength become the limitations of

existing optical systems. In an effort

to overcome these limitations, metrology

systems based on the scanning electron

microscope (SEM) have appeared and are

often assumed to be the panacea of all

the problems and the limitations of

existing optical systems. In response

to the application of the SEM to these

problems, new optical systems have appeared including ultraviolet and laser

scanning systems. This paper takes a critical look at the basic optical and

SEM metrologies, outlines the program at

the National Bureau of Standards to

provide micrometer and submicrometer

feature-size standards for both technologies, and discusses what can be done in

practice until suitable standards become

available.

[Contact: Robert D. Larrabee, (301)

975-2298]

Nyyssonen, D. , Metrology In Microlithography, to be published as a book

chapter in VLSI Electronics Microstructure Science, Microlithography for

VLSI, N.G. Einspruch, ed. (Academic

Press)

.

The advent of very-large-scale and veryhigh-speed integrated-circuit technologies has had enormous impact on the

requirements for accuracy and precision

of dimensional metrology. Accurate and

precise measurements are needed to improve yield, to ensure that lithographic

and critical dimension measurement systems meet specifications, to establish
CEEE Technical Progress Bulletin - June 1987 Page 3

Dimensional Metrology , cont'd.

control of fabrication processes, and to

relate measurements to theory or to

serve as input data to modeling or simulation programs. The push to micrometer

and submicrometer feature sizes on

larger and larger wafers requires dimensional measurement systems with

precision and accuracy which can take up

only a small fraction of the error budget of 10% or less allowed in process

control. By the gauge maker's rule, the

measurement system tolerance must be

three to ten times less than the tolerance on the part being manufactured.

This book chapter discusses some of the

unique requirements which metrology

places on optical and scanning electron

microscope measurement systems and provides a framework for realistically

evaluating the capabilities of a given

dimensional-measuring system in the

context of the purpose for which the

measurement system is to be used.

[Contact: Robert D. Larrabee, (301)

975-2298]

Nyyssonen, D. , A Practical Method for

Edge Detection and Focusing for Linewidth Measurements on Wafers, to be

published in Optical Engineering.

Lack of precision and accuracy of inprocess critical dimension (CD) measurements of linewidth continues to be a serious problem at micrometer and submicrometer dimensions. Even with highly

repeatable optical linewidth measurement

systems, variable "offsets" or errors

have been shown to occur with changes in

process variables such as thickness of

the patterned layer and sublayers and

changes in the indices of refraction of

the materials. All of these variations

result in a change in the optical phase

difference that occurs on reflection at

the line edge and, therefore, result in

changes in the structure of the optical

image. Although an accurate coherent

optical edge-detection method has been

developed, it requires accurate knowledge of this phase difference, which is

not always possible in CD measurements.

This paper proposes a new dual- threshold

method for edge detection and focusing,

based on image theory, which can be

adapted to most optical microscope based

measurement systems. It does not re- quire knowledge of the phase discontinuity at the line edge. The accuracy of

this criterion is compared to two more

widely used criteria, 1 ) the minimum and

2) 50% threshold, and it is concluded

that, when the phase difference is

unknown and varies with normal processing, the new dual- threshold method

is the superior method.

[Contact: Robert D. Larrabee, (301)

975-2298]

Nyyssonen, D. , and Kirk, C., Modeling

of the Optical Microscope Imaging of

Lines Patterned in Wiick Layers with

Variable Edge Geometry

.

A monochromatic, waveguide model is

presented which can predict the optical

microscope images of line objects with

arbitrary edge geometry, patterned in

thick layers, including multilayer

structures with sloping, curved, and

undercut edges, granular structures such

as lines patterned in polysilicon, as well as asymmetric objects. The model

is used to illustrate the effects of

line edge structure on the optical

image. Qualitative agreement with

experimentally obtained optical image

profiles is demonstrated. Application

of the model to study the effects of

variations in layer thickness and edge

geometry on linewidth measurements made

at different stages of manufacturing

integrated circuit devices is discussed.

[Contact: Robert D. Larrabee, (301)

975-2298]

Nyyssonen, D. , and Larrabee, R.D.,

Submicrometer Metrology in the Optical

Microscope, to be published in the

NBS Journal of Research.

The recent impetus of the semiconductor

industry toward submicron feature sizes

on integrated circuits has generated an immediate need for measurement tools and
Page 4 CEEE Technical Progress Bulletin - June 1987

Dimensional Metrology , cont'd.

standards suitable for these features.

Optical techniques have the advantages

of being nondestructive and of having

high throughput, but the disadvantage of

using wavelengths comparable to feature

size which results in complex scattered

fields and image structures that are

difficult to interpret. Although submicron optical linewidth measurement is

possible for 0.3-ym feature sizes, cur- rent instrumentation and linewidth standards, particularly for wafers, will

have to improve radically in accuracy,

as well as in precision, to meet the

anticipated needs of the IC industry for

submicron dimensional metrology. This

paper discusses the effects of inadequate precision and accuracy on process

control in IC fabrication and suggests

some ways of circumventing these limitations until better instrumentation and

standards become available.

[Contact: Robert D. Larrabee, (301)

975-2298]

Postek, M.T., Non-Destructive Submicron Dimensional Metrology Using the

Scanning Electron Microscope, to be

published in Review of Progress in

NDE.

The increasing evolution of microelectronics into the submicron region necessitates non-destructive examination of

these structures both for linewidth

measurement and defect inspection by

systems other than the optical microscope. The scanning electron microscope

operated in the low beam-voltage mode

has been recently employed in this work

due to its potentially high spatial

resolution and depth of field. This

paper discusses realistic applications

of the scanning electron microscope to

non-destructive microelectronics inspection and metrology in light of the present instrument specifications and capabilities and relates them to the processing controls required for submicron

metrology

.

[Contact: Michael T. Postek, (301)

975-2299]

Recently Published

Postek, M.T., and Joy, D.C., Microelectronics Dimensional Metrology in

the Scanning Electron Microscope, Part

I, Solid State Technology, Vol. 29,

No. 11, pp. 145-150 (November 1986);

Part II, Solid State Technology,

Vol. 29, No. 12, pp. 77-85 (December

1986) [also to appear in NBS Journal of

Research] .

The increasing integration of microelectronics into the submicrometer region

for very-large-scale and very-high-speed

integrated-circuit applications necessitates the examination of these structures both for linewidth measurement and

for defect inspection by systems other

than the optical microscope. The low

beam-voltage scanning electron microscope (SEM) has been employed recently

in this work due to its potentially high

spatial resolution and to its large

depth of field. The applications of the

scanning electron microscope to microelectronics inspection and metrology are

discussed in light of the present instrument specifications and capabilities, and the processing controls re- quired for submicrometer processing are

examined. The discussion includes effects of the electron beam/sample interaction and its modeling with the Monte

Carlo technique. Various sources of

error in SEM metrology are also ex- amined. In conclusion, the prospect of

automated wafer inspection and progress

in establishing SEM measurement standards are outlined.

[Contact: Michael T. Postek, (301)

975-2299]

Packaging

Recently Published

Oe ttinger, F.F., Thermal Characterization of Integrated Circuits — A Tutorial, Proceedings of Semiconductor

Thermal and Temperature Measurement

Symposium, Scottsdale, Arizona, December 9-1 1 , 1986, pp. T2-1 to T2- 4

(1 986) .
CEEE Technical Progress Bulletin - June 1987 Page 5

Packaging , cont'd.

This tutorial deals with the practicalities of the thermal characterization of

integrated circuit devices and packages,

utilizing both computational and experimental techniques.

[Contact: Frank F. Oettinger, (301)

975-2054]

Integrated Circuit Test Structures

Released for Publication

Schafft, H • A • , Thermal Analysis of

Electromigration Test Structures, to

be published in IEEE Transactions on

Electron Devices (special issue on Interconnections and Contacts for

VLSI)

.

A thermal analysis of a straight-line

resistor test structure is used to show

how test structure design and test conditions can affect the accuracy of electromigration characterizations of metallizations. Recommendations for the

design and use of electromigration test

structures are given.

[Contact: Harry A. Schafft, (301)

975-2234]

Schafft, H.A., Staton, T. , Mandel, J. , and Shott, J. , Reproducibility of

Electromigration Measurements, to be

published in the IEEE Transactions on

Electron Devices (special issue on Interconnections and Contacts for

VLSI)

.

The reproducibility of median- time- tofailure (t cri ) measurements was determined in an inter laboratory experiment

in which 1 1 laboratories and a reference

laboratory took part. Each laboratory

used a method of its choosing to test

equivalent samples under the same conditions of current density and oven temperature. Ihe be tween-laboratory reproducibility of t,- g measurements normalized to one metallization temperature

was dependent on current-density stress:

at 1.0 MA/cm2 it was within 15%, while

at 2.5 MA/cm2 it was generally within

50%. The primary source for variability

is in estimating the temperature rise of

the test metallization due to joule

heating. Recommendations are given for

the design and test of electromigration

test structures to improve the reproducibility of t

5

0

measurements.

[Contact: Harry A. Schafft, (301

)

975-2234]

Device Physics and Modeling

Released for Publication

Bennett, H.S., Fundamental Principles

for Gallium Arsenide Devices, to be

published in the Proceedings of the

International Symposium on Circuits and

Systems, Philadelphia, Pennsylvania,

May 4-7, 1987.

Recent advances in physics for

submicron silicon devices suggest

lessons or principles that are valid

when numerically simulating the behavior

of GaAs devices. These lessons from

physics for silicon devices are

summarized and their implications for

GaAs devices are given.

[Contact: Herbert S. Bennett, (301 ) 975-2079]

Bennett, H.S., Indirect Energy Gap of

Si, Doping Dependence.

The doping dependence of the indirect

energy gap of silicon is reviewed for

the Electronic Materials Information

Service of IEE (London) . This review is

a guide with commentary to assist readers in selecting which values are best

for their applications. Our state of

knowledge in this area is such that in

many cases the intended application for

the data on bandgap changes determines

the appropriate values to use. Data

from interpreting both electrical and

optical measurements are given.

[Contact: Herbert S. Bennett, (301)

975-2079]

Bennett, H.S., and Lowney, J.R., Models for Heavy Doping Effects in Gallium

Arsenide.
Page 6 CEEE Technical Progress Bulletin - June 1987

Device Physics and Modeling , cont'd.

Knowledge of the parameters that

describe how the band edges, densities

of states, and the effective intrinsic

carrier concentrations vary with dopant

and carrier densities is essential for

reliable predictions from numerical

simulations of GaAs/AlGaAs devices and

for interpreting optical measurements.

Klauder' s self-energy method, which is

self-consistent, is used to calculate

the effects due to the interactions

between carriers and dopant ions in GaAs

at 300 K. The many-body effects due to

the interactions among the carriers

themselves, exchange and correlation,

are estimated by evaluating expressions

similar to those of Abram et al. at 300

K. When densities exceed about 5 x 10 16 cm- 3 in n-type GaAs and 10 18 cm3

in

p-type GaAs, carrier-dopant ion interactions and carrier-carrier interactions

become significant and should be included in calculations of band structure

changes and of properties which depend

on the density of states such as carrier

transport, effective intrinsic carrier

concentrations, and coefficients for

optical absorption.

[Contact: Herbert S. Bennett, (301)

975-2079]

Bennett, H.S., Submicron Device

Physics for Numerical Simulations.

Recent advances in physics for submicron, bipolar-crystalline devices suggest principles that are valid when

modeling bipolar devices with noncrystalline regions such as those with polysilicon, polycrystalline silicon, and

hydrogenated amorphous silicon emitters.

These principles from crystalline device

physics are summarized, and their implications for the noncrystalline regions

of bipolar devices are given.

[Contact: Herbert S. Bennett, (301)

975-2079]

Gaitan, M., and Mayergoyz, I.D., Time

Perturbation Analysis for the MOS System.

The development of a numerical implementation of the small-signal response of

MOS (metal oxide-semiconductor) capacitors, using time perturbation analysis

is discussed. The effects of nonconstant doping profiles and interface and

bulk traps are included. The model uses

Fermi-Dirac statistics to describe the

occupancy of the interface and bulk

traps. The oxide region is considered

to have no mobile carriers and any fixed

oxide charge distribution is modeled as

a charge sheet at the Si-SiO^ interface.

This technique can be used to find the

small signal response of a device from

the static solution.

[Contact: Michael Gaitan, (301)

975-2070]

Recently Published

Bennett, H.S., High Dopant and Carrier

Concentration Effects in Gallium Arsenide: Band Structure & Effective

Intrinsic Carrier Concentrations,

Journal of Applied Physics, Vol. 60,

No. 8, pp. 2866-2874 (1 5 October

1 986)

.

The quality and reliability of predictions from numerical simulations of

GaAs/AlGaAs devices, such as heterojunction bipolar transistors, depend on

input parameters. These parameters

include the variations with doping and

carrier concentrations of the valence

and conduction band edges and of the

effective intrinsic carrier concentrations for heavily doped p-type and

n-type gallium arsenide. The Klauder

self-energy method is used to calculate

the effects of the one-body interactions

among the dopant ions and the carriers

in heavily doped gallium arsenide at 300

K. The many-body interactions of ex- change and correlation are estimated by

interpreting optical absorption measurements and by calculations based on degenerate theory. When densities

exceed 1 0

1 3 cm3

in p-type and 10 17 cm3

in n-type GaAs, one-body and many-body

terms become of the same order of magnitude and should be included in calcula-
CEEE Technical Progress Bulletin - June 1987 Page 7

Device Physics and Modeling , cont'd.

tions of band structure changes and of

properties which depend on the density

of states, such as carrier transport and

effective intrinsic carrier concentrations.

[Contact: Herbert S. Bennett, (301)

975-2079]

Bennett, H.S., Modeling Silicon Emitters for VLSI Transistors, Proceedings of the Workshop on New Developments in the Physics of Homojunctions

and He terojunc tions, Leuven, Belgium,

May 28-29, 1986, unpaged (December

1 986)

.

The accuracy and reliability of predictions from numerical simulations of

advanced bipolar transistors for verylarge-scale integration (VLSI) applications depend on model parameters. These

parameters include the variations with

doping and carrier concentrations in

both n-type and p-type silicon of 1 ) the

valence and conduction band edges, 2)

the effective intrinsic carrier concentrations, 3) the minority carrier mobilities, and 4) the minority carrier lifetimes. This paper reviews recent advances in device physics for modeling

the emitters of bipolar transistors with

submicrometer dimensions and high con- centrations of dopant ions and car- riers.

[Contact: Herbert S. Bennett, (301)

975-2079]

Lowney, J.R., Impurity Bands and Band

Tailing in n-Type GaAs , Journal of

Applied Physics, Vol. 60, No. 8, pp.

2854-2859 (15 October 1986).

The densities of states of the valence

and conduction bands of n-type GaAs have

been calculated for a donor density of

1017 cm-3 at 300 K and 20 K. Both the

donor-carrier and carrier-carrier interactions have been included. Band tails

appear on both bands and the energy gap

is narrowed. Calculations were also

performed for a donor density of 10^ 3 cm-3 . The results show the formation of

an impurity band at 20 K, whereas a band

tail exists at 300 K.

[Contact: Jeremiah R. Lowney, (301

)

975-2048]

Radiation Effects

Recently Published

Hefner, A.R., Blackburn, D.L., and Galloway, K. F., The Effect of Neutrons

on the Characteristics of the Insulated

Gate Bipolar Transistor ( IGBT) , IEEE

Transactions on Nuclear Science, Vol.

NS-33, No. 6, pp. 1428-1434 (December

1986) . The effects of neutrons on the operating

characteristics of Insulated Gate Bipolar Transistors (IGBT) are described.

Experimental results are presented for

devices that have been irradiated up to

a fluence of 10 13 neutrons/cm 2

, and an

analytical model is presented which

explains the observed effects. It is

found that with increasing neutron fluence, the on-state voltage increases,

the switching time decreases, and the

saturation current decreases. For the

range of fluences studied, the observed

effects result from a reduction in

minority carrier lifetime in the IGBT

and not from changes in the effective

dopant density. The effects of neutrons

on the IGBT are compared with their

known effects on power metal oxide-semiconductor field-effect transistors (MOSFETs ) , and it is shown that the IGBT

characteristics begin to degrade at a fluence that is an order of magnitude

less than the fluence at which the power

MOSFET begins to degrade. At high

fluences, the IGBT takes on the characteristics of a power MOSFET.

[Contact: Allen R. Hefner, (301)

975-2071

]

Pugh, R.D., Johnston, A.H., and Galloway, K.F., Characteristics of the

Breakdown Voltage of Power MOSFETs

After Total Dose Irradiation, IEEE

Transactions on Nuclear Science, Vol.

NS-33, No. 6, pp. 1460-1464 (December

1 986) . The effects of total dose irradiation on
Page 8 CEEE Technical Progress Bulletin - June 1987

Radiation Effects / cont'd.

the breakdown voltage of p-channel power

metal oxide-semiconductor field-effect

transistors (MOSFETs) are examined.

Although breakdown voltage for p-channel

devices increased at higher dose levels,

as expected, some devices exhibited an

initial decrease in breakdown at very

low levels of total dose. The interaction of ionizing radiation effects with

the junction termination methods designed to increase the voltage at which

breakdown occurs is analyzed.

[Contact: Thomas J. Russell, (301)

975-2973]

Russell, T.J. , Bennett, H.S., Gaitan,

M., Suehle, J. S., and Roitman, P. , Correlation Between CMOS Transistor and

Capacitor Measurements of Interface

Trap Spectra, IEEE Transactions on

Nuclear Science, Vol. NS-33, No. 6, pp.

1228-1233 (December 1986).

The radiation-induced change in the

energy spectra of Si0

2 ~Si interface

traps as determined using 1 ) the chargepumping and weak-inversion techniques on

compound metal oxide-semiconductor

(CMOS) transistors and 2) using the

quasi-static capacitance voltage and

detailed model techniques on CMOS ca- pacitors are compared. The interface

trap spectra determined from these measurements are in good quantitative

agreement over most of the band gap for

the range of densities of traps approximately lOlO to 10 12 cm-1 eV-1 . [Contact: Thomas J. Russell, (301)

975-2073]

Singh, G. , Galloway, K.F., and Russell,

T.J., Radiation-Induced Interface

Traps in Power MOSFETS, IEEE Transactions on Nuclear Science, Vol. NS-33,

No. 6, pp. 1454-1459 (December 1986).

Methods for estimating values of radiation-induced interface trapped charge

from the current-voltage (I-V) characteristics of metal oxide-semiconductor

field-effect transistors (MOSFETS) are

described and applied to commercially

available power MOSFETs. The power

MOSFETS show severe degradation on radiation exposure with the effects of positive oxide trapped charge dominating;

however, interface trap buildup is significant. The results are compared to

experimental measurements available on

other technologies.

[Contact: Thomas J. Russell, (301)

975-2073]

Insulators and Interfaces

Released for Publication

Mountain, D. J. , Galloway, K. F., and

Russell, T.J. , The Effect of PostOxidation Anneal on the Electrical

Characteristics of Thin Oxides.

In this study, the effects of pre- and

post-oxidation treatments on thin

(~20-nm) gate oxide properties have been

made. Pre-oxidation cleans and postoxidation anneal (POA) times and ambients were compared. Flatband voltage,

oxide field breakdown, and average density of interface trap measurements were

used to evaluate the different sequences. The data indicate that an

optimum oxidation sequence for thin gate

oxides can be designed. A sacrificial

oxidation cleaning procedure and a long

(120-min) POA in nitrogen gave the oxide

with the best electrical characteristics.

[Contact: Thomas J. Russell, (301)

975-2073]

Other Semiconductor Topics

Recently Published

Larrabee, R.D., and Bell, M.I., Nondestructive Evaluation Activities in

t~tw* Semiconductor Materials and Processes

c ember

Division,

1 986)

.

NBSIR 86-3495 (DeThis is the first of an anticipated

yearly report of the nondestruc tive

evaluation and measurement development

activities currently in progress in the

Semiconductor Materials and Processes
CEEE Technical Progress Bulletin - June 1987 Page 9

Other Semiconductor Topics , cont'd.

Division of the National Bureau of Standards. Present activities include production and certification of standard

reference materials for resistivity and

optical measurement of linewidths on

transparent photomasks; orchestrating

round robins for ellipsometric layer

thickness, deep-level characterization,

and spreading resistance; developing new

techniques tor optical deep-level spectroscopy, profiling resistivity, and

recombination lifetime in ingots of very

high resistivity silicon; for measuring

oxygen in silicon by infrared absorption; for characterizing compound semiconductor wafers by optical and x-ray

techniques; and for extending the photomask linewidth work to thicker lines on

silicon substrates.

[Contact; Robert D. Larrabee, (301)

975-2298]

Novotny, D.B., Measurement of the

Separation Distance in Contact and

Proximity Lithography, Journal of the

Electrochemical Society, Vol. 133, pp.

2600-2605 (December 1986).

A method is presented for measuring the

separation distance between the substrate surface and the mask surface in

contact and proximity optical lithography. This method utilizes the analysis of the Fresnel diffraction pattern

produced by a slit aperture in the mask

and physically replicated in the photoresist. From the analysis, the image

distance producing the observed Fresnel

diffraction pattern is obtained and is

used to calculate the separation distance. The conditions for the application of this method are presented and an

easy method for computer-generation of

the Fresnel diffraction patterns is

described. A simplified method for

estimating the separation distance from

the number of diffraction pattern peaks

and valleys is also given. Results are

presented showing that a finite separation distance may exist in hard "contact" lithography and that this measurement method is applicable from distances

from near zero to 20 or more micrometers.

[Contact; Donald B. Novotny, (301)

975-2699]

Stern, E.A., Ma, Y. and Bouldin, C.E.

Answer to Comment by M.A« Marcus

Concerning "Local Structure at Mn Sites

in Icosahedral Mn-Al Quasicrystals"

,

Physical Review Letters, Vol. 57, No.

13, p. 1659 (September 29, 1986).

A response is given to M.A. Marcus who

raised questions about the data analysis

leading to conclusions that EXAFS data

of Stern et al. support a model involving two Mn sites, one of which is like

that in a-Al Mn. The response showed

that the results are consistent with the

data and analysis presented in the

paper.

[Contact; Charles E. Bouldin, (301

)

975-2046]

Wunder, S.L., Bell, M.I., and Zerbi, G.

,

Band Broadening of CH2 vibrations in

the Raman Spectra of Polymethylene

Chains, Journal of Chemical Physics,

Vol. 85, No. 7, pp. 3827-3839 (1 October 1 986)

.

The isotropic and anisotropic linewidths

of methylene vibrations in a homologous

series of alkanes of increasing chain

length have been measured in the liquid

state as a function of temperature. The

bandwidths of the CH 2 symmetric

stretching modes, which are in Fermi

resonance with overtones of the CH2 bending vibrations, are temperature

insensitive over a 200-K interval, ex- plained in terms of a vibrational dephasing mechanism (inhomogeneous broadening) for these modes. In contrast,

for the bending and antisymmetric vibrations, significant band broadening oc- curs over this same temperature interval. In addition, for these modes, both

the absolute value of the bandwidth and

the relative rate of increase of the

bandwidth with increasing temperature

decrease with increasing chain length.

These observations are consistent with a reorientational broadening mechanism as
Page 1 0 CEEE Technical Progress Bulletin - June 1987

Other Semiconductor Topics , cont'd.

the principal bandwidth contribution for

these vibrations. Hindered end-over-end

rotation of the molecules, which con- tributes to the band broadening for very

low molecular weight alkanes, rapidly

becomes too slow to be observable on the

time scale of the Raman experiment for

the higher molecular weight alkanes and

polyethylene. For longer chain lengths,

torsional backbone motions coupled to

the high frequency antisymmetric

stretching modes can account for the

breadth of the bands.

[Contact: Michael I. Bell, (301) 975-

2081]

FAST SIGNAL ACQUISITION, PROCESSING,

AND TRANSMISSION

Waveform Metrology

Released for Publication

Sc hoenwe tter , H.K., Flach, D.R.,

Souders, T.M., and Bell, B.A., A

Precision Programmable Step Generator

for Use in Automated Test Systems, to

be published as NBS Technical Note

1 230.

A precision voltage step generator has

been designed for use in automated systems to test the dynamic response of

waveform recorders and other instruments. The programmable pulse parameters include transition polarity, pulse

length, and repetition rate. The

initial and final levels of voltage

steps are each programmable within the

range of ±1 V for a 50-ft termination and

within ±5 V for a high impedance load.

Voltage steps within these ranges settle

to within ±0.02% of full scale range in

less than 22 and 26 ns, respectively,

for small load capacitance. The corresponding transition durations are approximately 6 and 7 ns. [Contact: Howard K. Sc hoenwe tter, (301)

975-241 4]

Turgel, R.S., and Vecchia, D. F., Precision Calibration of Phase Meters,

to be published in the IMTC/87 Conference Record of the IEEE Instrumentation/Measurement Technology Conference,

Boston, Massachusetts, April 27-29,

1 987.

A procedure and statistical analysis for

the calibration of precision phase

meters has been developed. The method

can be applied equally to the calibration of any instrument that has a nominally linear response characteristic.

Using statistical tests, the method

checks whether the calibration data fits

a linear model and then determines the

linear equation from which the corrected

calibration values are computed. Because random fluctuations tend to mask

the limiting mean of the instrument

response, the corrections are based on the values computed from the calibration

curve, rather than on the actual calibration data.

To obtain the data, test points are

chosen to cover the range to be calibrated, and several sets of calibration

readings are taken by comparing the

instrument under test to a standard.

The replication of the data at the

selected test points serves to characterize the repeatability and to decide

whether the linear model is appropriate.

If the assumption of a linear model is

correct, the data are fitted to a straight line (calibration curve) , and

statistical tests are used to determine

if the slope and intercept of the calibration curve are significantly different from their ideal values.

As a next step, the error limits of the

readings from the instrument under test

are computed for three conditions: no

corrections applied, only a constant

correction applied, and the full calibration curve used for the corrections.

The three error limits are then compared

to the instrument specifications to

determine which type of calibration

correction, if any, is needed.

[Contact: Raymond S. Turgel, (301)

975-2420]
CEEE Technical Progress Bulletin - June 1987 Page 1

1

Waveform Metrology / cont'd.

Recently Published

Kanada, T. , and Franzen, D.L. , Optical

Waveform Measurement by Optical Sampling with a Mode-Locked Laser Diode,

Optics Letters, Vol. 11, No. 1, pp.

4-6 (January 1986).

Optical pulses from a GaAlAs laser diode

directly modulated at a frequency f Q (971 MHz) are mixed in a LiI03 crystal

with optical sampling pulses at a frequency of f

q - 1 0 Hz from a mode-locked

GaAlAs laser diode. The optical signal

obtained by sum-frequency mixing in the

crystal is observed with a photomultiplier and an oscilloscope. The original

pulse waveform is reproduced clearly

with a temporal resolution equal to the

mode-locked laser-diode pulse width and

at a repetition frequency of 10 Hz.

Similar results are obtained with

InGaAsP laser diodes at a wavelength of

1.3 ym.

[Contact: Douglas L. Franzen, (303)

497-3346 or -5342]

Cryoelectronic Metrology

Released for Publication

Cirillo, M. , and Lloyd, F.L. , Phase

Lock of a Long Josephson Junction to an

External Microwave Source.

A long Josephson junction dc biased on a zero-field singularity and emitting

radiation at microwave frequencies is

irradiated with external microwave

power. This power can be supplied

either by a room- temperature oscillator

or by another long junction. We find

that the oscillations of the junction

can lock coherently to the external

signal for frequency intervals ranging

from 500 kHz to 50 MHz. The dependence

of the width of these intervals of

coherence on the external microwave

power is measured for the case in which

the power is generated by a room- temperature oscillator.

[Contact: Frances L. Lloyd, (303)

497-3254 or 3988]

Hamilton, C.A., Kautz, R.L. , Lloyd,

F.L., Steiner, R.L., and Field, B.F.,

The NBS Josephson Array Voltage Standard.

A Josephson voltage standard based on a series array of 2076 junctions is described. With a 15-mW input at 96 GHz,

the array produces 15,000 quantized

levels between -1.5 and 1.5 V. Initial

results on high-precision comparisons

with a Zener reference standard are

given.

[Contact: Clark A. Hamilton, (303)

497-3740 or -3988]

Kautz, R.L. , Global Stability of the

Chaotic State Near an Interior Crisis,

to be published in the Proceedings of

the Workshop on Structure, Coherence,

and Chaos in Dynamical Systems, Copenhagen, Denmark, July 1 2-16, 1986.

In dissipative systems, chaotic trajectories are locally unstable in that they

show a sensitive dependence on initial

conditions, but globally stable in that

they are represented by attractors.

Using the radio-f requency-biased Josephson junction as an example, global stability of the chaotic state is explored

in the neighborhood of an interior

crisis. A measure of global stability

is developed by considering the response

of the system to thermal noise. In the

presence of noise, the system occasionally escapes from the region of state

space containing the attractor, and the

temperature dependence of the average

escape time is characterized by an activation energy. This activation energy

is a useful measure of the global stability of the chaotic state, being

analogous to the barrier height for a particle in a potential well.

[Contact: Richard L. Kautz, (303)

497-3391 or -3988]

Kautz, R.L., Hamilton, C.A., and Lloyd,

F.L. , Series-Array Josephson Voltage

Standards

.

Series arrays typically including 1500

Josephson junctions driven at 90 GHz
Page 1

2

CEEE Technical Progress Bulletin - June 1987

Cryoelectronic Metrology , cont'd.

have been used to generate quantized

reference voltages in excess of 1 V.

Such standards simplify the procedure

and reduce the measurement uncertainties

in the calibration of electrochemical

cells.

[Contact: Richard L. Kautz, (303)

497-3391 or -3988]

McDonald, D.G. , Novel Superc<Hiducting

Thermometer for Bolosetrie Applications.

The temperature dependence of the magnetic penetration depth in a superconductor is proposed as a basis for a sensitive thermometer. This depth is

monitored through the inductance of a microstrip transmission line, which is

incorporated into an impedance measuring

bridge. The bridge is envisioned as an

integrated circuit with all critical

components at low temperature. It is

estimated that the contribution to the

noise equivalent power by the sum of the

Josephson noise and the preamplifier

noise can be reduced to about 7 x 10- 20

watt per root hertz, which is approximately four orders of magnitude below

currently realized values. Performance

of this device as a bolometer is limited

by noise from the thermal conductance of

the bolometer mount with the present

state of the art.

[Contact: Donald G. McDonald, (3 03)

497-51 1 3]

Ono, R.H., Cromar, M.W., Kautz, R.L.,

Soulen, R.J. , Colwell, J.H., and Fogle,

W.E., Current-Voltage Characteristics

of Nanoampere Josephson Junctions, to

be published in the Proceedings of the

1 986 Applied Superconductivity Conference, Baltimore, Maryland, September

28-October 3, 1986. [To appear in IEEE

Transactions on Magnetics, March 1987]

We have studied the current-voltage

( I-V ) characteristics of small-area

tunnel junctions at temperatures below 1 K. The junctions were made in an edge

geometry with an Nb base electrode and

had areas less than 0.05 ym2 and critical currents in the nanoampere range.

Although the measured I-V characteristics resemble those of ordinary hysteretic junctions, the supposed zero-voltage

portion of the curve proved to have a finite slope and to deviate from zero

voltage. For these junctions, it is

apparently possible for occasional 2tt phase slips to occur without switching

to the usual voltage state. This behavior can be explained either by macroscopic quantum tunneling or by a model

in which the effective shunt conductance

of the junction is frequency-dependent.

[Contact: Michael W. Cromar, (303) 497-

5375]

Recently Published

McDonald, D.G. , Modeling a VoltageLocked Josephson Junction Array Amplifier: Gain, Input Impedance, and Bandwidth, Journal of Applied Physics,

Vol. 60, No. 9, pp. 3247-3257 (November

1, 1986).

Previously published experimental re- sults are used to deduce an equivalent

circuit for this amplifier, based on the

shunted junction model. It is found

that the very small inductances of the

junction shunt resistors play an important role in determining the shape of

the current-voltage curves in the voltage-locked region. Once the circuit is

determined using the shunted junction

model, a combination of an approximation

method (the method of slowing varying

amplitudes) and the shunted junction

model is used to approximately maximize

the power gain of the circuit. The

maximum gain achieved in these simulations of the two-junction amplifier is

11.3. This gain occurred with a negative resistance input impedance of

-0.41R and a signal source impedance of

0.1 67R, where R is the junction shunt

resistance. It is estimated that the

bandwidth of this amplifier is about

1 GHz.

[Contact: Donald G. McDonald,

497-51 1 3]

(303)
CEEE Technical Progress Bulletin - June 1987 Page 1

3

Antenna Metrology

Released for Publication

Francis, M.H. , and Newell, A.C., Multiple Reflection Effects On a NearField Range, to be published in the

Proceedings of the Antenna Measurement

Techniques Association Conference,

Ottawa, Canada, September 23-25, 1986.

For many years it has been recognized

that multiple reflections between the

probe and antenna under test are a source of error in near-field measurements. For planar measurements, corrections can be made by using the rather

cumbersome technique of obtaining data

over many planes and averaging the

results. NBS has developed a test for

estimating the magnitude and character

of the effects upon the far field due to

multiple reflections occurring between

the antenna under test and the probe.

The procedure uses one-dimensional nearfield scans measured at multiple separation distances. For each separation

distance, the one-dimensional far field

is obtained using a Fourier transform.

The resulting far fields are then

averaged in a complex manner. The difference between the average far field

and each of the other far fields is

primarily due to multiple reflections.

[Contact: Michael H. Francis, (303)

497-5873]

Hill, D.A., Far-Field Transient

Response of an Antenna from Near-Field

Data.

A theoretical basis for calculating the

transient far-field response of an an- tenna from planar near-field data in

either the time domain or the frequency

domain has been developed. A double

integral must be evaluated if we begin

with time-domain data, but a triple

integral must be evaluated if we begin

with frequency-domain data. However,

the frequency-domain integrals are in a form that is suitable for three-dimensional fast Fourier transform. Two

idealized examples are studied, and

identical results are obtained starting

with frequency-domain or time-domain

data. The main practical difficulty in

determining the transient response is

the large number of near-field samples

that are required. If data are taken at

only a few near-field points, then the

singularity expansion method presents a possible method of determining the com- plex resonances of the antenna under

test.

[Contact: David A. Hill, (303)

497-3472]

Hill, D.A., and Francis, M.H., Out-ofBand Response of Antenna Arrays.

The response of antenna arrays to outof-band frequencies has been analyzed

using the effective aperture approach.

An average value of effective aperture

can be obtained by averaging the incidence angle and the polarization of the

incident field. Far-field patterns have

also been calculated by treating the

array element excitations as random

variables. The randomness in the element excitations causes a decrease in

directivity and an increase in sidelobe

level.

[Contact: David A. Hill, (303)

497-3472]

Muth, L.A., Displacement Errors in

Antenna Near-Field Measurements and

Their Effect on the Far Field, to be

published as NBS Technical Note 1 306.

The effects of probe displacement errors

in the near-field measurement procedure

on the far-field spectrum are studied.

Expressions are derived for the displacement error functions that maximize

the fractional error in the spectrum

both for the on-axis and off-axis directions. Planar x-y and z-displacement

errors are studied first, and the

results generalized to position errors

in cylindrical and spherical scanning.

Near-field models are used to obtain

order-of-magnitude estimates for the

fractional error as a function of relevant scale lengths of the near field,

defined as the lengths over which
Page 1 4 CEEE Technical Progress Bulletin - June 1987

Antenna Metrology , cont'd.

significant variations occur.

[Contact: Lorant A. Muth, (303)

497-3603]

Laser Metrology

Released for Publication

Bennett, H.E., Guenther, A.H., Milam,

D. , and Newnam, B.E., Laser Induced

Damage in Optical Materials: 1984,

to be published as NBS Special Publication 727.

The Sixteenth Annual Symposium on Optical Materials for High Power Lasers

(Boulder Damage Symposium) was held at

the National Bureau of Standards in

Boulder, Colorado, October 1 5-1 7, 1984.

The Symposium was held under the auspices of ASTM Committee F-1, Subcommittee on Laser Standards, with the joint

sponsorship of NBS, the Defense Advanced

Research Projects Agency, the Department

of Energy, the Office of Naval Research,

and the Air Force Office of Scientific

Research. Approximately 200 scientists

attended the Symposium, including representatives of the United Kingdom,

France, West Germany, and the Netherlands. The Symposium was divided into

sessions concerning Materials and Measurements, Mirrors and Surfaces, Thin

Films, and Fundamental Mechanisms. As

in previous years, the emphasis of the

papers presented at the Symposiian was directed toward new frontiers and new

developments. Particular emphasis was given to materials for high power apparatus. The wavelength range of prime

interest was from 10.6 ym to the uv region. Highlights included surface

characterization, thin-f ilm-subs trate

boundaries, and advances in fundamental

laser-matter threshold interactions and

damage mechanisms. Harold E. Bennett of

the Naval Weapons Center, Arthur H.

Guenther of the Air Force Weapons Laboratory, David Milam of the Lawrence

Livermore National Laboratory, and Brian

E. Newnam of the Los Alamos National

Laboratory were co-chairmen of the Symposium. The Seventeenth Annual Symposium was scheduled for October 28-30, 1985

at the National Bureau of Standards,

Boulder.

[Contact: Aaron A. Sanders, (303)

497-5341]

Recently Published

Johnson, E.G. , Direct Measurement of

the Spatial Modes of a Laser Pulse —

Theory, Journal of Applied Optics,

Vol. 25, No. 17, pp. 2967-2975 (September 1 986)

.

We make an electric-field measuring

apparatus by using optical processing,

tapered optical fibers, and a pair of

detectors at the end of each optical

fiber. Using an appropriate computergenerated hologram (CGH), we show it is

possible to discriminate among a set of

orthonormal modes used to represent the

spatial features of the electric field

with a signal- to-noise ratio of at least

100 to 1. The tapered fiber is a mode

filter that is used in the transform

plane of the CGH. This fiber allows

precise determination of the strength of

each of the orthonormal modes being used

as the spatial basis of the electric

field before the optical processing.

[Contact: Eric G. Johnson, (303)

497-3234]

Microwave and Millimeter-Wave Metrology

Released for Publication

Adair, R., Reeve, G. , and Gatterer,

L.E., The Expanding Need for Microwave and Millimeter Wave Calibration

Services.

Several technology surveys concerning

mi 1 lime ter-wave measurement needs and

capabilities have been conducted by the

National Bureau of Standards Boulder

Laboratories and others. The results of

some of these studies are summarized.

Current microwave- and millimeter-wave

standards and calibration capabilities

at the National Bureau of Standards are

reviewed. The lack of national stan-
CEEE Technical Progress Bulletin - June 1987 Page 1

5

Microwave & Mi 1 lime ter-Wave , cont'd.

dards in certain frequency bands may

lead to problems with the specification,

acceptance testing, calibration, and

critical use of some components and

systems

.

[Contact: Gerome R. Reeve, (3 03)

497-3557]

Clague, F.R., and Larsen, N.T., A

Transient. Response Error in Microwave

Power Meters Using Thermistor Detectors.

Broadband coaxial thermistor mounts are

commonly used in automated precision

microwave measurement systems such as six-port networks. To reduce the effect

of temperature drift and to decrease the

total measurement time, it is desirable

to measure the thermistor mount dc bias

voltage very quickly after turning the

radio frequency on or off. However,

investigation has revealed that a coaxial mount may take much longer to settle

to a stable dc bias voltage than the

thermistor element time constant or the

associated power meter servo bandwidth

would indicate. If the bias voltage is

measured before this transient ends, the

error in the calculated radio-f requency

power can be very large; as much as 1.4%

has been observed. Ihis paper describes

these transients and gives measured

durations and maximum error for a number

of different bolometer mounts.

[Contact: Fred B. Clague, (303)

497-5778]

McDonald, D.G. , Novel Superconducting

Thermometer for Bolometric Applications.

The temperature dependence of the magnetic penetration depth in a superconductor is proposed as a basis for a sensitive thermometer. This depth is

monitored through the inductance of a microstrip transmission line, which is

incorporated into an impedance measuring

bridge. The bridge is envisioned as an

integrated circuit with all critical

components at low temperature. It is

estimated that the contribution to the

noise equivalent power by the sum of the

Josephson noise and the preamplifier

noise can be reduced to about 7 x 10-20

watt per root hertz, which is approximately four orders of magnitude below

currently realized values. Performance

of this device as a bolometer is limited

by noise from the thermal conductance of

the bolometer mount with the present

state of the art.

[Contact: Donald G. McDonald, (303)

497-51 1 3]

Recently Published

Hoer, C.A., On-Line Accuracy Assessment for the Dual Six-Port ANA: Treatment of Systematic Errors, CPEM

(Conference in Precision Electrical

Measurements) Digest, NBS Gaithersburg,

MD, June 23-27, 1986, R.F. Dziuba, ed.

,

pp. 238-239 [abbreviated version];

[complete paper to be published in a special issue of IEEE Transactions on Instrumentation and Measurement]

.

Expressions are derived for calculating

systematic errors in dual six-port or four-port measurements of reflection

coefficient and scattering parameters

due to imperfections in the transmission

line standard used to calibrate the

system. A new mathematical model for a four-port reflectome ter makes it easier

to visualize and analyze these errors.

[Contact: Cletus A. Hoer, (303)

497-3703]

Optical Fiber Metrology

Released for Publication

Gallawa, R.L., and Li, X., On the

Calibration of Optical Fiber Power

Meters: The Effect of Connectors.

With the proliferation of optical fiber

communications systems, there has

emerged a pressing need for accurate

measurement of optical power at the

wavelengths and power levels of interest

to the telecommunications community.

The most immediate need involves the use
Page 1

6

CEEE Technical Progress Bulletin - June 1987

Optical Fiber Metrology , cont'd.

of power meters in a field environment.

Thus, connectors and adapters are used

in making the measurement. A commercially available power meter, of which

there are many brands and types, is the

generic building block for field measurements. The calibration of the meter

without a connector presents several

problems, some of which are alluded to

in the paper. When connectors are used,

as is often the case, a new set of problems is added to an already complicated

set. Fiber connectors and the associated connector adapters, which mate the

connectorized fiber to the meter, are of

particular interest; these problems are

addressed in this paper.

[Contact: Robert L. Gallawa, (303)

497-3761]

Kanda, T. , and Franzen, D.L. , SingleMode Fiber Dispersion Measurements

Using Optical Sampling with a ModeLocked Laser Diode, Optical Letters,

Vol. 11, pp. 330-332 (May 1986).

Pulses from a wavelength-tunable, modelocked laser diode were measured after

21 km of single-mode fiber propagation

by optical sampling with another modelocked laser diode; a resolution of 0.1

ps/(nm«km) is achieved in this chromatic

dispersion measurement. In another

related experiment, 78-ps-dur a tion

pulses from an ordinary, multilongitudinal-mode laser diode are clearly displayed by optical sampling after 36 km

of fiber propagation. System bandwidth

increases to approximately 500 GHz km as the laser-diode wavelength is temperature tuned through the zero-dispersion

region.

[Contact: Douglas L. Franzen, (303)

497-3346 or -5342]

Yang, S., and Gallawa, R.L., Fiber

Bandwidth Measurement Using Pulse

Spectrum Analysis, Applied Optics,

Vol. 25, No. 7, pp. 1069-1 071 (April

1 986) . The pulse spectrum analysis method (PSA)

of measuring fiber bandwidth has been

suggested as an alternative to the frequency- and time-domain methods, but

there is a paucity of information on the

technique and very little data. In

fact, we know of no prior measurement

comparisons between the PSA method and

frequency- and time-domain methods.

This paper gives results of an experiment which compared the three methods.

The PSA method has the advantage of

being very simple and gives results that

are consistent with the other two methods. The International Electrotechnical

Commission recommends the PSA 'method,

but the Electronics Industries Association of the U.S.A. takes no position in

this regard.

[Contact: Robert L. Gallawa, (303)

497-3761 )

]

Electro-Optic Metrology

Released for Publication

Polak-Dingels , P. , Burdge, G. , Lee, Chi

H. , Seabaugh, A.C., Brundage, R.T.,

Bell, M.I., and Albers, J. , An Investigation of Photoconductive Picosecond

Microstripline Switches on SelfImplanted Silicon on Sapphire (SOS),

to be published in the Conference Proceedings of the 2d Topical Meeting on

Picosecond Electronics and Optoelectronics, Incline Village, Nevada, January 14-16, 1987.

Silicon-on-sapphire (SOS) switches,

damaged by implantation with 270 keV Si

ions at fluence levels of 10 12 to 2 x 1015 cm- 2

, have been characterized by

picosecond cross-correlation, Raman, and

resistivity measurements. Response

times as short as 9 ps were measured for an implant dose of 10 14 . Raman measurements indicate amorphous silicon is not

formed until the dose reaches 2 x 10 15 cm- 2

, but there is no further decrease

in response time at the higher doses.

The resistivity peaks at the same dose

level at which the minimum response time

is observed, and then decreases for

higher dose. The mobility decreases

monotonically with increasing implant
CEEE Technical Progress Bulletin - June 1987 Page 1

7

Electro-Optic Metrology / cont'd.

dose. We find the optimum implantation

condition is one that produces heavy

damage in the material without fully

amorphizing the silicon. Amorphization

decreases the on/off ratio of the device

through reduction of both dark resistance and mobility, without increasing

the speed of the device.

[Contact: Richard T. Brundage, (301)

975-2958]

Other Fast Signal Topics

Released for Publication

Cavcey, K.H., Transmission Loss

Through 6061 T-6 Aluminum Using a Pulsed Eddy Current Source.

One method of nondestructive testing in

conductors is that of pulsed eddy cur- rents (PECs). In this method, defects

modify the electromagnetic field passing

through the conductor, with respect to

phase (delay) and attenuation. The

conductor itself as a transmission medium also modifies the incident field from

the PEC source with respect to phase and

attenuation. It is therefore important

to determine the intrinsic response and

transmission loss for any medium of

interest. This paper outlines a study

of the frequency and phase response

(with time-domain techniques based on the PEC source) for seven different

thicknesses of aircraft-grade 6061 T6

aluminum alloy.

[Contact: Kenneth H. Cavcey, (303)

497-3995]

Geist, J. , Photodiode Quantum Efficiency and Spectral Responsivity SelfCalibration, to be published in the

Proceedings of the IEEE Instrumentation

and Measurement Technology Conference,

Boston, Massachusetts, April 27-29,

1 987.

High-quality silicon photodiodes can be

used as primary radiometric standards in

the visible portion of the radiometric

spectrum. The physical basis for their

use as standards, and their performance

in areas pertinent to their use as standards, is reviewed.

[Contact: Jon Geist, (301) 975-2066]

Perrey, A.G. , Bell, B.A., and Treado,

M . J . , Evaluation of Electronic Monitoring Devices, to be published as NBSIR 86-3501.

Electronic Monitoring Devices (EMDs) are

used to monitor the presence Oj. individuals within a given area who are responsible to the criminal justice system but

not confined to institutions. Several

EMDs were tested to measure operational

characteristics such as operating frequency, approximate range of operation,

component capability, and tamper resistance. Tests were conducted in an open

field, wooden residence, high rise metalbuilding, and in a laboratory environment.

[Contact: Arnold G. Perrey, (301)

975-2782]

ELECTRICAL SYSTEMS

Power Systems Metrology

Recently Published

Mehta, S.P., and Petersons, 0., Calibration of Test Systems for Measuring

Poser Losses of Transformers, IEEE

Transactions on Power Delivery, Vol.

FWRD— 1 , No. 4, pp. 215-223 (October

1986) .

Two years of development work by ASEA

Electric, under the auspices of the

Industrial Research Associate Program of

the National Bureau of Standards, has

resulted in a verifiable method of determining overall accuracy of test systems used in the measurement of transformer losses. This technical achievement is important to the industry because of the present trend towards lower

power factors which makes loss measurements exceedingly difficult with desirable test system accuracy that is traceable. The technical details of this

work are presented in NBS Technical Note
Page 1

8

CEEE Technical Progress Bulletin - June 1987

Power Systems Metrology , cont'd.

1 204 (over 100-page document). The

intent of this IEEE paper is to present

the basic principles embodied in the

Technical Note. A calibration system

for accuracy verification and alignment

of test systems is described. Methodologies and data for evaluating accuracy

of test systems are summarized. The

details elaborated upon in this paper

represent a way to determine the accuracy of the overall test system for measuring transformer losses as well as that of the principal components of such

a system.

[Contact: Oskars Petersons, (301)

975-2400]

Van Brunt, R.J., and Sauers, I., Gas

Phase Hydrolysis of SOF2 and SOF^,

Journal of Chemical Physics, Vol. 85,

No. 8, pp. 4377-4380 (October 15,

1 986) . The rates for gas-phase hydrolysis of

S0F2( thionylf luoride) and SOF^ (thionyltetrafluoride) have been measured at

a temperature of 298 K. The second

order rate constant for S0F

2 hydrolysis

in SF^ buffer gas was found to have the

value (1.2 ± 0.3) x 10“ 23 cm 3 /s which

agrees with previous estimates of Sauers

et al. , but is three orders of magnitude

lower than the value obtained by

Ruegsegger et al. at 340 K. The rate

constant for SOF^ hydrolysis has not

previously been measured, and its value

in both SFg and N 2 buffer gases was found here to be (1.0 ± 0.3) x 10-21 cm3 /s

•

[Contact: Richard J. Van Brunt, (301)

975-2425]

Superconductors

Released for Publication

Goodrich, L.F., Pittman, E.S., and Ekin,

J.W., Studies of NbTi Strands Extracted from Coreless Rutherford

Cables.

The electromechanical properties of NbTi

strands extracted from coreless Rutherford cables were studied to clarify the

relative effects of strand location and

field angle on current degradation that

occurs in cables that have been com- pacted into a keystone shape. Detailed

critical-current measurements were made

on two samples which were fabricated

under controlled conditions. These are

prototype cables for high-energy physics

applications. Specific factors that are

addressed are the nature, location, and

amount of degradation. This information

is intended to lead to methods for re- ducing the amount of critical-current

degradation in cable manufacture.

[Contact: Loren F. Goodrich, (303)

497-3143]

Dragomirecky , M., Minervini, J.V. , Ekin,

J.W., Goldfarb, R.B., and Clark, A.F.,

Losses in a Nb-Ti Superconductor as Functions of AC Field Amplitude and DC

Transport Current, Proceedings of the

11th International Cryogenic Engineering Conference - ICEC 1 1 , Berlin, West

Germany, April 22-25, 1986 (Butterworth

& Co. Ltd. , Publishers) , pp. 746-750.

Hysteretic shielding losses and transport losses were measured in a multifilamentary Nb-Ti superconducting coil

as functions of transverse ac field

amplitude and dc transport current. The

conductor was biased with a dc field.

There was significant agreement with the

predictions of Minervini' s two-dimensional theoretical model.

[Contact: John W. Ekin, (303)

497-5448]

Ekin, J.W., High-Field Flux Pinning

and the Strain Scaling Law, Proceedings of the International Symposium on Flux Pinning and Electromagnetic Properties in Superconductors, Fukuoka,

Japan, November 11-15, 1985, pp. 267-

271.

The effects of strain on flux pinning in

superconductors are discussed. Significant differences between the strain

scaling law, temperature scaling law,

and the flux-line-shearing model of
CEEE Technical Progress Bulletin - June 1987 Page 1

9

Superconductors , cont ' d

.

Kramer are demonstrated. The strain

scaling law is more general than current

flux-pinning models, and as such, it may

serve as a guide to future work on flux

pinning theory. Flux-pinning measurements at fields up to 24 T have been

made on a series of high-quality Nb^Sn

samples with third (and fourth) element

additions. The data show that the usual

extrapolation procedures for determining

the bulk-average upper critical field in

NbgSn lead to significant errors when

additives such as Ti, Ta, Ga, and Hf are present.

[Contact: John W. Ekin, (303) 497-5448]

Fickett, F.R., and Capobianco, T.E.,

Relationships Between Mechanical and

Magnetoelectric Properties of OxygenFree Copper at 4 K, Advances in Cryogenic Engineering (Materials), Vol. 32,

(Plenum Press, New York, NY, 1986), pp.

421-427.

Commercially pure, oxygen-free copper is

the material of choice for nearly all

superconductor stabilization. Straining

relatively pure copper at 4 K can result

in significant increases in the residual

resistivity and, thus, a decreased ability of the copper to stabilize the

superconductor. In this paper, we quantify the effect of strain on the resistivity and magnetoresistivity of a large

number of oxygen-free coppers from various sources and in various tempers. In

addition, the low-temperature stressstrain behavior of these materials and

its correlation with room temperature

data and the residual resistivity ratio

prior to straining is discussed. An

apparatus developed for mechanical properties testing of relatively small wire

samples at low temperature is described.

[Contact: Frederick R. Fickett, (303)

497-3785]

Goldfarb, R.B., and Clark, A.F., AC

Losses in Nb-Ti Measured by Magnetization and Complex Susceptibility,

Advances in Cryogenic Engineering

(Materials), Vol. 32 (Plenum Press, New

York, NY, 1986), pp. 779-786.

DC magnetization and complex ac susceptibility were measured at 4 K as functions of longitudinal dc field for a multifilamentary Nb-Ti superconductor

with no transport current. Minor hysteresis loops were obtained in the dc

measurements. The full-penetration

field Hp, a function of applied field

H, was deduced directly for each minor

loop. The values for Hp were fit to

the Kim-type equation, Hp ( H ) = Hp ( 0 ) / ( 1 +H/ Hk )

,

where Hp ( 0 ) and

H^ are constants. The minorhysteresis-loop areas gave losses that

were in excellent agreement with Carr's

theoretical critical-state equation, W = (4y 0 H

0 Hp/3) ( 1-Hp/2H 0

)

,

where H

Q is

the maximum applied field for each

loop.

An expression was obtained for the ideal

reversible differential susceptibility,

X re v = 0 /87Ty

Q

( H-H cl ) X

2

, where

<[>q is the flux quantum, Hc ]^ is the

lower critical field, and X is the penetration depth. Hc i and X for the

sample were deduced from the shape of

the major hysteresis loop. Clem's theoretical expressions for the real (x

1 ) and imaginary (x") components of ac susceptibility are functions of ac field

amplitude h, Hp, and Xrev The

predicted susceptibilities based on these expressions were in good agreement

with measured curves of x' and X" as functions of h and H. The measured x' and x" were independent of frequency up

to 1 kHz, as expected when bulk hysteresis is the primary loss mechanism.

[Contact: Ronald B. Goldfarb, (303)

497-3650]

Goodrich, L.F., Dube, W.P., Pittman,

E.S., and Clark, A.F., The Effect of

Aspect Ratio on Critical Current in

Multifilamentary Superconductors

,

Advances in Cryogenic Engineering

(Materials), Vol. 32 (Plenum Press, New

York, NY, 1986), pp. 833-840.

Experimental data and discussion are
Page 20 CEEE Technical Progress Bulletin - June 1987

Superconductors , cont'd.

presented on the critical current of

straight superconductors as a function

of the orientation of a perpendicular

applied magnetic field. Commercial,

multi filamentary NbTi and NbgSn samples

were measured in a radial access magnet

that allowed an arbitrary angle setting.

The change in critical current was measured at different magnetic fields to

scale the effect for use in a standard

test method. For a NbTi sample, the

critical current with the magnetic field

parallel to the wider face of the conductor is higher than that with the

perpendicular orientation. The effect

can be as high as 40% for a NbTi sample

with an aspect ratio of 6. The effect

in Nb^Sn is opposite that in NbTi. A

discussion of the most likely cause of

the effect, which accounts for the difference between NbTi and Nb 3 Sn, is

given.

[Contact: Loren F. Goodrich, (303)

497-3143]

Magnetic Materials and Measurements

Released for Publication

Capobianco, T.E., and Fickett, F.R., A

Proposed Military Standard for Commercial Eddy Current Probes Based on Performance Characterization.

The latest results of the work being

done on a draft military standard for

characterizing commercial eddy current

probes are reported. We discuss measurement techniques that have been

evaluated for suitability as a characterization test method, such as field

mapping and various electrical parameter

measurements and the reasons for selecting the method which has been incorporated in the present draft. Our conclusion is that the measurement of impedance change of a probe over a range of

frequencies on two metals of different

conductivities offers the best indicator

of eddy current probe sensitivity and

proper operating range.

[Contact: Thomas E. Capobianco, (303)

497-31 41]

ELECTROMAGNETIC INTERFERHKE

Radiated Electromagnetic Interference

Released for Publication

Crawford, M.L. , and Bean, J.L. , NSWC

Reverberating Chamber - A High Power

Microwave Exposure Chamber, to be

published in the Proceedings of the

Third National High Power Microwave

Technical Conference, Albuquerque, New

Mexico, Dec. 1-5, 1986. [An expanded

version appeared under the title "Electromagnetic Radiation Test Facilities

Evaluation of Reverberation Chambers

Located at NSWC, Dahlgren, Virginia,"

NBSIR 86-3051 (June 1986).]

This paper describes measurement procedures and results obtained from evaluating the reverberating chamber facility

located at the Naval Surface Weapons

Center (NSWC), Dahlgren, Virginia. The

facility was developed by the NSWC for

use in measuring and analyzing the electromagnetic susceptibility/ vulnerability

(EMS/V) of weapon systems and the

shielding effectiveness of enclosures

and shielding materials. A brief description of the facility is given including the instrumentation used for

performing the evaluation and calibration of the facility and for its use in

performing EMS/V tests. Measurements

described include the chamber's: 1)

insertion loss of coupling efficiency,

2) tuner(s) effectiveness, and 3) test

zone E- field uniformity and absolute

amplitude calibration. Advantages and

limitation for use of the reverberating

chamber method are summarized along with

comments on interpreting measurement

results and on conclusions derived from

these studies.

[Contact: Myron L. Crawford, (303)

497-5497]

Fi tzGerrell, R.G. , NIJ Standard for

Mobile Antennas. [This document

provides the technical basis for a standard to be issued by the National

Institute of Justice, U.S. Department

of Justice.]
CEEE Technical Progress Bulletin - June 1987 Page 21

Radiated EMI , cont'd.

This document establishes minimum performance requirements and methods of

test for mobile antennas mounted on vehicles used by law enforcement agencies, and deals with antenna characteristics that determine the suitability

and effectiveness of antennas for law

enforcement use. As a result, only the

following four frequency bands are considered: 25 to 50 MHz, 150 to 174 MHz,

4 00 to 512 MHz, and 806 to 866 MHz.

This standard supersedes NILECJ-STD0205.00, Mobile Antennas.

[Contact: Richard G. FitzGerrell, (303)

497-3737]

Kanda, M. , and Wyss, J.C., Evaluation

of Off Axis Measurements Performed in

an Anechoic Chamber.

The performance of a rectangular radiofrequency anechoic chamber is measured

when the device under test is not on the

center line of the launch antenna. An

electrically small field probe is

repeatedly scanned longitudinally away

from the launch antenna and into the

chamber. With each scan, various parameters are changed, including: 1 ) horizontal and vertical position of the

probe with respect to the center line of

the launch antenna; 2) frequency; and 3)

type of launch antenna. With the probe

located 1 m off the center line and

scanning between 2 to 6 meters from the

launch horn, the uncertainty due to

being off the center line ranges from ±1

dB at 250 MHz to ±5.0 dB at 800 MHz and

above. If the probe is within ±50 cm of

center line, the uncertainty is no more

than ±1.5 dB at 800 MHz; and for ±25 cm of center line, the uncertainty is further reduced to ±0.5 dB at 800 MHz.

[Contact: Motohisa Kanda, (3 03)

497-5320]

Masterson, K. , A Photonic Electric

Field Probe for Frequencies up to 2

GHz, to be published in the Proceedings of the SPIE Conference on Fiber

Optics, Optoelectronics, and Laser

Applications in Science and Engineering, Cambridge, Massachusetts, September 24, 1986.

A photonic electric field probe using

the Pockel' s effect in bulk LiNbO _ is

described. It was used to measure electromagnetic fields from 10 to 100 V/m.

The observed frequency response was flat

up to 1.6 GHz and extended beyond 2 GHz.

Over the majority of the frequency

range, field strengths down to about 6

V/m should be detectable above the noise

floor when using a 1 0-kHz detection

bandwidth. Present experimental results

indicate a linear dynamic range for the

probe of approximately 30 dB . Increasing the optical carrier power and lowering the system noise floor is expected

to improve the dynamic range to above 50

dB . [Contact: Keith D. Masterson, (303)

497-3756]

Randa, J. , and Kanda, M., A Lattice

Approach to Volumes Irradiated by Unknown Sources, NBS Technical Note

1 303 (October 1 986).

We suggest an approach to the characterization of electromagnetic environments

irradiated by unknown sources. The

approach is based on the numerical solution of Maxwell's equations subject to

the constraints imposed by the measured

values of the field at a small number of

measurement points and by boundary con- ditions. A thorough examination is

presented of two methods for the numerical solution. The examples attempted

demonstrate the approach, but reveal

that neither technique is fully successful. Possible future directions are

suggested.

[A paper based on the contents of this

Technical Note is scheduled for presentation at the Seventh Symposium and

Technical Exhibition on EMC (Zurich,

Switzerland, March 1 987) under the title

“A Lattice Approach to Environments

Irradiated by Unknown Sources" and will

appear in the proceedings of that Symposium. A second paper based on this

material has been submitted to the IEEE
Page 22 CEEE Technical Progress Bulletin - June 1987

Radiated EMI , cont'd.

Transactions on Electromagnetic Compatibility with the title "A New Approach to

Volumes Irradiated by Unknown Sources."]

[Contact: James P. Randa, (3 03)

497-3150]

Conducted Electromagnetic Interference

Recently Published

Key, T . S . , and Martzloff, F.D., A

Consensus on Powering and Grounding

Sensitive Electronic Equipment, Industry Applications Society Annual

Meeting, Denver, Colorado, September

29-October 3, 1986, pp. 1-7.

As sensitive electronic processing systems proliferate in our facilities, so do power-related problems. Efforts to

alleviate these problems have ranged

from installing expensive power conditioning equipment to applying special

grounding techniques not found in conventional safe grounding practice.

Understanding of what is actually going

on has been lacking. We find elaborate

power systems, modified from basic practice to the extent of being unsafe, that

continue to be plagued with power ingand grounding-related problems. Out of

this chaos we are persuaded to s tudy and

understand the complexities of the problem and to begin developing good practices. This is the objective of the

IEEE Working Group on Powering and

Grounding Sensitive Electronic Equipment, Standards Project PI 100. We will

introduce Project P1 100, preview its

scope and technical content and, most

importantly, invite participation in

this seriously needed consensus standard

activity.

[Contact: Francis D. Martzloff, (301)

975-2409]

Ma r tzl off, F .D . , Surge Suppressors and

Clamps, Proceedings of EMC EXPO 86,

International Conference on Electromagnetic Compatibility, Washington, DC,

June 16-19, 1986, pp. E01.1-E01.7.

The paper presents a review of technologies developed for surge suppressor

devices used in electronic circuits.

Three generic types are described:

crowbars, varistors, and avalanche diodes. The significant differences in

their performance characteristics are

pointed out, together with guidance on

proper application and measurements.

[Contact: Francois D. Martzloff, (301)

975-2409

]

ADDITIONAL INFORMATION

Lists of Publications

Gibson, K. A., Page, J. M., and Miller,

C .K . S . , A Bibliography of the NBS

Electromagnetic Fields Division Publications, NBS IR 85-3040 (February

1 986) . This bibliography lists publications of

the National Bureau of Standards' Electromagnetic Fields Division for the

period from January 1984 through September 1 985, with selected earlier publications from the Division's predecessor

organizations.

[Contact: Kathryn A. Gibson, (303)

497-3132]

Kline, K.E., and DeWeese, M.E., Metrology for Electromagnetic Technology:

A Bibliography of NBS Publications,

NBSIR 86-3048 (June 1986).

This bibliography lists the publications

of the personnel of the Electromagnetic

Technology Division of NBS in the period

from January 1970 through December 1985.

A few earlier references that are directly related to the present work of

the Division are included.

[Contact: Kathryn E. Kline, (303)

497-3678]

Palla, J. C., and Meiselman, B., Electrical and Electronic Metrology: A

Bibliography of NBS Electrosystems

Division Publications, NBS List of

Publications 94 (January 1987).

This bibliography covers publications of
CEEE Technical Progress Bulletin - June 1987 Page 23

Lists of Publications , cont' d.

the Electrosystems Division, Center for

Electronics and Electrical Engineering,

NBS , and of its predecessor sections for

the period January 1963 to January 1987.

A brief description of the Division's

technical program is given in the introduction.

[Contact: Jenny C. Palla, (301)

975-2220]

Walters, E.J. , Semiconductor Measurement Technology: A Bibliography of NBS

Publications for the Years 1962-1986,

NBSIR 87-3522 (February 1987).

This bibliography contains reports of

work performed at the National Bureau of

Standards in the field of Semiconductor

Measurement Technology in the period

from 1962 through December 1986. An

index by topic area and a list of

authors are provided.

[Contact: E. Jane Walters, (301)

975-2050]

1987 CEEE CALENDAR

July 28-30 (Vail, CO)

Short Course on Optical Fiber Measurements. This course is sponsored by

the National Bureau of Standards and the

University of Colorado with the cooperation of members of industry who serve as faculty together with staff from the

Electromagnetic Technology and Electromagnetic fields Divisions. The course

is intended for scientists and engineers

involved in optical fiber characterization and emphasizes concepts, -techniques, and apparatus used in measuring

engineering parameters of telecommunications-grade fibers.

The following major topic areas are addressed: optics for communications, em- phasizing geometric optics concepts;

fiber properties and parameters; indexprofile measurements; fiber bandwidth

measurements in the frequency and time

domains; fiber attenuation measurements;

connector and splice losses; optical

time-domain ref lec tome try concepts and

applications; single-mode fibers; statistics and error analyses, measurement

uncertainties; and fibers for sensors.

[Contact: Office of Conference

Services, University of Colorado (303)

492-8630; Robert L. Gallawa (303)

497-3761; or Matt Young (303) 497-3223]

September 14-16 (Research Triangle Park,

NC)

VLSI and GaAs Packaging Workshop.

This Workshop is co-sponsored by the

Components, Hybrids, and Manufacturing

Technology Society of IEEE and NBS;

attendees are expected to be knowledgeable in the field and to participate in

discussions. Topic areas include: VLSI

and wafer scale package design (characterization and implementation, cost and

performance driven solutions) ; package

thermal design (characteristics, results, and issues); package interconnection options (wire bonding, TAB, flip

nection options (wire bonding, TAB, flip

chip, or optical); GaAs IC packaging

(high speed packaging considerations);

package electrical issues (reduction of

parasitics and improvements in electrical performances); integrating package

design (from die to system, including

assembly and test issues); VLSI package

materials advancements; die-attach solutions for large chips; new failure

mechanisms in VLSI packaging. [Contact:

George G. Harman, (301) 975-2097]

September 22-25 (Boulder, CO)

Noise Measurement Seminar. This fourday course is presented and hosted by

the Electromagnetic Fields Division in

cooperation with representatives from

industry and the NBS Time and Frequency

Division. It is intended for practicing

noise metrologists and technical managers responsible for systems in which

accurate measurements of thermal and

phase noise are important. Attendees

will learn the most important precautions to take in making accurate noise

measurements and will receive a set of

notes that are suitable for use in solv-
Page 24 CEEE Technical Progress Bulletin - June 1987

1987 CEEE Calendar , cont'd.

ing precision noise measurement problems. Course topics include reference

thermal noise sources; thermal noise

measuring systems and techniques; phase

noise; and the problems of measuring

thermal noise in passive components,

amplifiers, and communication systems.

The course design combines formal lectures on theory presented by NBS staff

and industry experts with demonstrations

in NBS laboratories and demonstrations

of commercial equipment. A special

feature of the Seminar is the opportunity each day for attendees to share

their experiences in solving specific

problems or their insights on practical

noise measurement issues through short

presentations to the assembled group.

Time is scheduled for group discussions

of these presentations and other topics

raised by the Seminar. [Contact:

Sunchana Perera (303) 497-3546]

September 23-25 (Gaithersburg, MD)

Workshop on the Role of Optics in Power

System Electrical Measurements. This

Workshop is sponsored by NBS, the

Bonneville Power Administration (BPA )

,

the Electric Power Research Institute

( EPRI ) , and the Empire State Electric

Energy Research Corporation (ESEERC) and

is intended for research and development

engineers in utilities and in companies

that supply equipment to the utility

industry. The objective of this workshop is to identify anticipated opportunities tor improved measurement techniques that should arise as power systems individually and collectively

evolve to meet the needs of the 1990s.

Presentations will stress the design and

testing of optical systems for 60-Hz

voltage or current measurement; the

interfacing of electronic or optica]

components with existing metering and

control systems; opportunities for new

measurement hardware resulting from

increased automated control of power

systems and of the testing of power

system components; and optical techniques for the measurement of electric

and magnetic fields in power systems or system components. The results of an

NBS study evaluating optical techniques

for power-system electrical measurements

and carried out in agreement with BPA

,

EPRI, and ESEERC will be presented as an

invited keynote. [Contact: Robert E.

Hebner, (301) 975-2403]

October 26-28 (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers (Nineteenth Boulder

Damage Symposium). This Symposium is

cosponsored by the National Bureau of

Standards, the American Society for

Testing and Materials, the Air Force

Office of Scientific Research, the Office of Naval Research, and the Defense

Advanced Research Projects Agency and

constitutes a principal forum for the

exchange of information on the physics

and technology of materials for highpower lasers.

Topics to be discussed include new materials, bulk damage phenomena, surface

and thin-film damage, design considerations for high-power systems, and fundamental mechanisms of laser-induced

damage. Proceedings of the Symposium

will be published (Note: The collection

of Symposium proceedings contains information on optics for all aspects of

high-power/high-energy lasers, including

environmental degradation, durability,

fabrication, material growth and deposition processes, and testing) . [Contact:

Susie A. Rivera (303) 497-5342]

December 10-11 (Gaithersburg, MD)

Power Semiconductor Devices Workshop.

This Workshop, sponsored jointly by IEEE

and NBS, is intended to bring together

for interactive participation those

actively working in the field of power

semiconductor devices. It will be held

in conjunction with the 1987 IEEE International Electron Devices Meeting in

Washington, DC. Four specific topic

areas have been selected, based on the

response to a questionnaire sent to over
CEEE Technical Progress Bulletin - June 1987 Page 25

1987 CEEE Calendar , cont'd.

200 power device researchers worldwide.

They are: power and high voltage

integrated circuits, discrete devices,

device modeling, and packaging. Attendees are expected to be prepared to

contribute to the development of re- sponses to specific questions that

arise in the context of the particular

topic areas; a final schedule identifying the topic areas should be available at the end of October. [Contact:

David L. Blackburn, (301) 975-2053]

CEEE SPONSORS

National Bureau of Standards

Department of Defense

Defense Nuclear Agency; National

Security Agency; Combined

Army/Navy/Air Force

U.S. Air Force

Hanscom Air Force Base; Newark Air

Force Station; Space & Missile

Organization; Wright-Patterson Air

Force Base

U. S . Army

Fort Belvoir; Fort Monmouth; Harry

Diamond Laboratories; Redstone

Ar senal

U.S. Navy

Naval Surface Weapons Center;

Weapons Support Center/Crane; Office

of Naval Research; Naval Air

Engineering Center

Department of Energy

Energy Systems Research; Fusion

Energy; High Energy & Nuclear

Physics; Bonneville Power

Administration

Department of Justice

Law Enforcement Assistance

Administration

Department of Treasury

Bureau of Engraving and Printing

Department of Transportation

National Highway Traffic Safety

The Charles Stark Draper Laboratory

Sandia National Laboratories
NBS-1 14A (rev. 2 -ec) U.S. SEPT. OF COMM. 1. PUBLICATION OR 2. Performing Organ. Report No. 3. Publication Date BIBLIOGRAPHIC DATA

SHEET (See instructions) REPORT NO.

NBSIR 87-3577 June 1987

4. TITLE AND SUBTITLE

Center for Electronics and Electrical Engineering Technical Progress Bulletin Covering

Center Programs, October to December 1986 with 1982 CEEE Events Calendar

5. AUTHOR(S)

E. Jane Walters, compiler

6. PERFORMING ORGANIZATION (If joint or other than NBS, see instructions)

national bureau of standards

DEPARTMENT OF COMMERCE

WASHINGTON, D.C. 20234

7. Contract/Grant No.

8 . Type of Report & Period Covered

October-Dec ember 1986

9.

SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City. State. ZIP)

10.

SUPPLEMENTARY NOTES

All technical information included in this document has been approved for publication

previously.

| | Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11.

ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bi bl iography or literature survey, mention it here)

This is the seventeenth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. This issue of the CEEE Technical Progress Bulletin covers

the fourth quarter of calendar year 1986. Abstracts are provided by technical area

for both published papers and papers approved by NBS for publication.

12.

KEY WORDS (Six to twelve entries ; alphabetical order; capitalize only proper names; and separate key words by semicolon s) antennas; electrical engineering; electrical power; electromagnetic interrerence;

electronics; instrumentation; laser; magnetics; microwave; optical fibers; semiconductors; superconductors

13. AVAILABILITY

Uni imited

| | For Official Distribution. Do Not Release to NTIS

Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C. 20402.

[XM Order From National Technical Information Service (NTIS), Springfield, VA. 22161

14. NO. OF

PRINTED PAGES

29

15. Price

$11.95

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KEY CONTACTS:

Center Headquarters (720) Director, Mr. Judson C. French (301) 975-2220

Deputy Director, Mr. Robert I. Scace (301) 975-2220

Electrosystems Division (722) Chief, Dr. Oskars Petersons (301) 975-2400

Electromagnetic Fields Division (723) Chief, Dr. Ramon C. Baird (303) 497-3131

Electromagnetic Technology Division (724) Chief, Dr. Robert A. Kamper (303) 497-3535

Semiconductor Electronics Division (727) Chief, Mr. Frank F. Oettlnger (301) 975-2054

INFORMATION:

For additional Information on the Center for Electronics and Electrical Engineering, write or call:

Center for Electronics and Electrical Engineering

National Bureau of Standards

Metrology Building, Room B-358

Gaithersburg, MD 20899

Telephone (301) 975-2220