Characterization of Multi Temperature and Multi RF 

Chuck Power Grown Silicon Nitride Films by PECVD and 

ICP Vapor Deposition 

by F. Semendy, N. Mark, S. Farrell, and G. P. Meissner 

ARL-TR-5105 March 2010 

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Army Research Laboratory 

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ARL-TR-5105 March 2010 

Characterization of Multi Temperature and Multi RF 

Chuck Power Grown Silicon Nitride Films by PECVD and 

ICP Vapor Deposition 

F. Semendy and N. Mark 

Sensor Electron Devices Directorate, ARL 

S. Farrell 

Department of Electical and Computer Engineering 

George Mason University, Fairfax VA 22030

G. P. Meissner 

General Technical Services 

3100 Route 138, Wall, NJ 07719 

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Characterization of Multi Temperature and Multi RF Chuck Power Grown Silicon 

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14. ABSTRACT 

Silicon Nitride thin films were grown at 100, 150, 200, and 250 oC and at rf-power of 30, 40, 50, and 60 Watts by plasma 

enhanced chemical deposition (PECVD) and inductive coupled plasma (ICP) chemical vapor deposition using 450 W 

microwave power. The silicon nitride films were deposited on a n-type (100) 4 silicon wafer with 1-20 ῼ cm resistivity. The 

optical, physical, and electrical properties were systematically investigated. Extensive analysis were conducted using Wollam 

Specrtroscopic Ellipsometer, FTIR, and AFM. The temperature of deposition and rf-power played important role in the physical 

and optical properties of the film. Similarly the index of refraction increased with increasing deposition temperature. Silicon

nitride stretching characteristic peaks Si-N, N-H, Si-H, and N-H have been observed with significant intensities as observed by

FTIR spectroscopy especially in the case of the film grown under various temperatures. For the first time the results obtained 

from the growth of silicon nitride using PECVD and ICP under conditions, we conclude that the ICP grown films are of 

superior quality. 

15. SUBJECT TERMS

Silicon nitride, PECVD, ICP, dielectric passivation 

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iii

Contents

List of Figures iv

List of Tables iv

1. Introduction 1

2. Experimental Details 2

3. Results and Discussion 3

4. Conclusions 10

5. References 11

List of Symbols, Abbreviations, and Acronyms 12

Distribution List 13
iv

List of Figures

Figure 1. (a) ICP system (b) PECVD system. .................................................................................2

Figure 2. Silicon nitride grown by ICP (a) thickness vs power , (b) index vs power .....................4

Figure 3. Silicon nitride grown by PECVD (a) thickness vs power , (b) index vs power...............5

Figure 4. (a) Thickness of (b) index of refraction of silicon nitride grown by ICP and 

PECVD for various trempertures...............................................................................................5

Figure 5. Surface plot of thickness of silicon nitride deposited by ICP at (a) 100C and (b) 

250..............................................................................................................................................6

Figure 6. Optical constants including index of refraction and extinction coefficiet for silicon 

nitride grown by ICP (a) grown at 100 C (b) grown at 250 C. Red curve shows the index 

of refraction while green dotted line indicate the exinction coefficient. ...................................6

Figure 7. AFM pictures 1x1 μm size scan for samples grown by ICP at (a) 100 C, (b) 250 C. .....7

Figure 8. AFM pictures 1x1 μm size scan for samples grown by PECVD at (a) 100 C, (b) 250 

C and (c) 250 C..........................................................................................................................7

Figure 9. AFM obtained RMS and Ra value for silicon nitride grown by PECVD and ICP at 

various temperatures..................................................................................................................8

Figure 10. AFM obtained RMS and Ra value for silicon nitride grown by (a)PECVD and (b) 

ICP at various rf-power..............................................................................................................8

Figure 11. FTIR spectrum of silicon nitride grown by PECVD and ICP at various 

temperatures...............................................................................................................................9

Figure 12. FTIR spectrum of silicon nitride grown by PECVD and ICP at various rf-chuck 

power..........................................................................................................................................9

List of Tables

Table 1. Thickness, Deposition Rate, and index of refraction for ICP grown samples under 

various chuck power. .................................................................................................................3

Table 2. Thickness, Deposition Rate, and index of refraction for PECVD grown samples 

under various power..................................................................................................................4
1

1. Introduction

Silicon nitride is used in a number of electronic and optical applications and is widely used in 

thin film dielectrics in a broad range of microelectronic, photovoltaic, and photonic devices. In 

addition to remarkable electronic properties, silicon nitride has high chemical and thermal 

stability, satisfactory optical transparency, remarkable moisture resistivity, and good mechanical 

strength. It is the candidate material for gate dielectric, insulation, barrier passivation, and 

encapsulation layers in microelectronic devices and integrated circuits wherever high-quality 

native oxides are not available or suitable. Another application is as an antireflection and 

passivation coating layer on crystalline-silicon (c-Si) solar cells. Common deposition techniques 

include plasma enhanced chemical vapor deposition (PECVD) and low pressure chemical vapor 

deposition (LPCVD). With LPCVD (1, 2) stoichiometric films of silicon nitride with low 

hydrogen content are obtained. However, due to high substrate temperature of typically of 700–

900 oC these layers cannot be used for low-temperature applications. Therefore, PECVD (3)

grown nitrides are used, which can be deposited at low temperature, usually at 250 oC. This 

method allows silicon nitride films to deposit at low temperature and pressure of 0.1–5 mTorr. 

The gases used in this method are SiH4 and NH3 . Even though this technique is widely used, the 

silicon nitride film deposited is known to be non-stoichiometric and contains substantial amount 

of hydrogen (4–6) and in some cases a small amount of oxygen (7, 8). The high hydrogen 

content results in a film that is actually SixNyHz, instead of Si3N4. Device performance can be 

degraded due to the substantial presence of hydrogen in the film which can migrate into the Si–

Si3N4 interface in devices, thus creating interface states (9, 10). The film characteristics can also 

be degraded by hydrogen. Thus, the silicon nitride may end up with lower density, higher etch 

rate, and lower thermal stability when compared to such films grown by LPCVD. In realizing 

and trying to overcome these kind of problems with silicon nitride films grown by LPCVD, and 

PECVD a new method to deposit these films was developed which was previously used to 

deposit silicon dioxide (11,12). In this method silicon nitride can be deposited at a temperature of 

400 oC or below at a pressure less than 10 mTorr. This new technique uses SiH4 and N2 gases 

and inductively coupled plasma (ICP) and creates high density plasma in the processing reactor. 

This high density plasma allows the deposition of a high quality silicon nitride film at low 

temperature with minimal hydrogen in the film. Some of the advantages of ICP sources over 

other types of high-density sources include easier scale up, and advanced automatic tuning for 

the source. In the hybrid ICP configuration, such as the one used in our work, it is possible 

through the additions of rf power to the wafer chuck, to control ion flux and ion energy 

independently (14). This helps the applications for dielectric film deposition by ICP. One can use 

gap filling techniques by high ion bombardment, by controlling the rf power in the wafer chuck,

which is not possible by PECVD. With such ion energy tuning, damage sensitive devices can be 

easily handled in this process. Figure 1 gives the layout of an ICP and PECVD systems. The ICP 
2

system is generally noted for low frequency of excitation, and it produces hot and cold electrons. 

Increased cracking molecules is easily possible and film uniformity can be obtained to the tune 

of 2–5% for 50 nm thick films. 

 ICP PECVD

Figure 1. (a) ICP system (b) PECVD system.

In this study, silicon nitride films deposited by PECVD and ICP methods for various 

temperatures and rf-chuck power were characterized by ellipsometer, AFM, and FTIR. 

Ellipsometric study provided detailed information on the thickness of the sample, optical 

constants, index of refraction, AFM profiling for surface roughness, grain size, FTIR 

spectroscopy for information on the chemical bonds. 

2. Experimental Details

The silicon nitride films were deposited on a p-type single side polished 4” wafer substrate with 

<100> orientation and with a resistivity of 1–20 Ω cm. The wafer was about 500 μm thick. Prior 

to deposition the Si wafers were stripped of native oxide by using dilute HF solution. The 

deposited silicon nitride was about 2000–3000 Å. The silicon nitride in this experiment were 

produced by Unaxis VLR 700 ICP system and Plasma Therm PT 790 PECVD system. In the 

PECVD system the process conditions were as follows. The total deposition pressure was 

900 mTorr, the rf power 45 W with rf of 13.56 MHz. Flow rates for SiH4 , N2 , NH3 , and He 

were 90, 160, 3, and 488 sccm. In each case the film was grown for 30 min at various 

temperatures of 100, 150, 200, and 250 oC and in a second set of experiments the rf-chuck power 

NH3

RF-power

13.56 MHz

rf 

Gas

ICP

l

Gas inlet

 wafer

rf-chuck
3

of 30, 40, 50, and 60 W were used as a variable. The ICP system is capable of depositing high 

quality dielectric films at a temperature as low as room temperature. The film was deposited at 

various temperatures of 100, 150, 200, and 250 oC at rf power of 50 W. The experiment was also 

done for various rf power levels of 30, 40, 50, and 60 W. The deposition rate was about 70 

Å/min for the rf power of 30 W. The thickness, refractive index, optical constants and surface 

layout were measured at a wavelength of 633 nm using a Wollam spectroscopic ellipsometer. 

This optical technique measures a change in polarization as light reflected or transmitted from 

the material structure. The polarization change is represented as an amplitude ratio and the phase 

difference. The measured response depends on optical properties and thickness of individual 

materials. One can also compute surface roughness this system. In addition, FTIR measurements 

were carried out in the 400 to 4000 cm–1 range to obtain information on the vibrational modes SiN, Si-H, and Si-NH bonds for the films grown under various conditions. The surface roughness 

was measured by AFM for 1x1 μm sizes.

3. Results and Discussion

Ellipsometric characterization provided information on thickness, deposition rate, and refractive 

index for silicon nitride grown using ICP and PECVD methods. Table 1 gives details on the film 

grown using ICP and figure 2a gives the graphical representation of the thickness and uniformity 

change for various power levels.

Table 1. Thickness, deposition rate, and index of refraction for ICP grown samples under 

various chuck power.

Power 

(W)

Thickness 

(Å)

% Uniformity Deposition 

Rate (Å/min)

Index % Uniformity

30 211.7 2.19% 70.4 2.0883 0.88%

40 2408.8 2.17% 80.3 2.1009 0.93%

50 3032.9 1.68% 101.1 2.0969 0.57%

60 3365.2 1.47% 112.2 2.1132 0.47%
4

 (a) (b)

Figure 2. Silicon nitride grown by ICP (a) thickness versus power and (b) index versus power.

From the graph one can see that the thickness of the silicon nitride film is linearly increasing,

whereas the uniformity change is at a higher percentage at the lower power level, while it is at a 

lower level at the higher power level. This means that the uniformity of the film is better at a 

higher power of film deposition. Figure 2b gives plot of the index of refraction for the ICP grown 

silicon nitride film for various power levels. 

Table 2 gives the thickness, deposition rate and index of refraction for PECVD grown samples 

under various power levels using PECVD. Obtained values are plotted on figure 3. In the 

PECVD technique the thickness of the film increases as the rf power increases and the index of 

refraction increase nominally and settles at about 60 W as indicated by the percentage 

uncertainity. Figure 4 gives the thickness and index of refraction of silicon nitride grown by 

PECVD and ICP for various temperatures. 

Table 2. Thickness, deposition rate, and index of refraction for PECVD grown samples under 

various power

Power 

(W)

Thickness 

(Å)

% Uniformity Deposition Rate 

(Å/min)

Index % Uniformity

30 1804.8 2.08% 60.2 1.9045 0.57

40 2181.0 2.19% 72.7 1.9208 0.71%

50 2840.5 2.54% 94.7 1.9228 1.17%

60 3142.1 1.84% 108.1 1.9185 0.65 %
5

 

(a) (b)

Figure 3. Silicon nitride grown by PECVD (a) thickness versus power and (b) index versus power.

 (a) (b)

Figure 4. (a) Thickness of (b) index of refraction of silicon nitride grown by ICP and PECVD for various 

tempertures. 

Observe that the thickness of silicon nitride decreases as the temperature increases in both 

PECVD and ICP growth, whereas the index of refraction increases as the growth temperature 

goes up. This is indicative of the nature of the material grown. As the temperature inceases, more 

of the real silicon nitride films are grown instead of the growth of other silicon bonded species. 

Also observe that the index change is linear for the ICP grown material—indicative of the better 

quality of ICP technique. At higher temperature, closer to 250 °C, the film is more of Si-N 

bonded material as indicated by the FTIR spectra reported later. Spectroscopic ellipsometer 

measurements provide additional information on the surface, as shown in figure 5. These surface 

plots were obtained after making a seventeen (17) point or more laser mesurements. From the 

figure we see difference in thickness as well as the distribution of the varying thickness. It is 

interesting to note that the thickness deviation has decreased, and that the uniformity is closer to 

the mean value.
6

 (a) (b)

Figure 5. Surface plot of thickness of silicon nitride deposited by ICP at (a) 100 °C and (b) 250 °C.

Optical constants were measured using the ellipsometer in each case and the two samples 

deposited by ICP at 100 °C and 250 °C are shown in figure 6.

 

Figure 6. Optical constants including index of refraction and extinction coefficiet for silicon nitride grown by 

ICP (a) grown at 100 °C (b) grown at 250 °C. Red curve shows the index of refraction while green 

dotted line indicate the exinction coefficient. 

Figure 6 clearly indicate that the silicon nitride film is settling quickly to a value of index of 

refraction higher than two (2) or close to it at higher temperature. A similar behavior was also 

observed in the case of PECVD deposited Si3N4.. Atomic force microscopy scanning for a 

1x1 μm size has given sufficient information about the quality of the film surface. Figure 7 gives 

the AFM scan pictures of two samples grown by ICP, one at 100 °C and the second one at 

250 °C for scan size of 1x1 μm. Clearly, the 250 °C grown sample is smoother and planar 

compared to the 100 °C sample.

3692.1

3720.07

3748.03

3776

3803.97

3831.93

Mean = 3768.3

Min = 3692.1

Max = 3859.9

Std Dev = 42.885

Uniformity = 1.1380 %

Nitride Thickness - Å

2663.3

2688.78

2714.27

2739.75

2765.23

2790.72

Mean = 2738.6

Min = 2663.3

Max = 2816.2

Std Dev = 39.367

Uniformity = 1.4375 %

Nitride Thickness - Å

si3n4_tauclor Optical Constants

Wavelength (nm)

200 400 600 800 1000

Index of refraction 'n'

Extinction Coefficient ' k'

1.90

2.00

2.10

2.20

2.30

2.40

2.50

0.00

0.10

0.20

0.30

0.40

n

k

si3n4_tauclor Optical Constants

Wavelength (nm)

200 400 600 800 1000

Index of refraction 'n'

Extinction Coefficient ' k'

2.00

2.10

2.20

2.30

2.40

2.50

2.60

0.00

0.10

0.20

0.30

0.40

0.50

n

k
7

(a) (b)

Figure 7. AFM pictures 1x1 μm size scan for samples grown by ICP at (a) 100 °C and (b) 250 °C.

Figure 8 gives the AFM scan pictures of three samples grown at 100, 150, and 250 C by 

PECVD. The surface smoothness and uniformity changes as the temperature of growth increases 

and at 250 C the film is of similar quality with prevalent silicon nitride material.

 

(a) (b) (c) 

Figure 8. AFM pictures 1x1 μm size scan for samples grown by PECVD at (a) 100 °C, (b) 150 °C, and (c) 250 °C.

The above scan pictures clearly indicate the size and change of the clusters of silicon nitride as 

the temperature changes. As with the deposition temperature, the quality of the film improves 

and particles get closer and able to form similarly sized particles and finally collapse to form 

uniform layer. Surface free energy gets reduced only through smoothing effects, decreasing 

feature heights and decreasing distance between features. Film roughness also was measured for 

PECVD and ICP deposited samples as shown in figure 9. Figure 9(a) shows the RMS value for 

PECVD grown sample at various temperatures. The RMS value decreased from the higher value 

to a lower value as the temperature increases.
8

 

Figure 9. AFM obtained RMS and Ra value for silicon nitride grown by PECVD and ICP at various temperatures.

As the temperatures increases the RMS value decreases as seen above, indicative of the quality 

of the film. Note that the ICP deposited film has a lower RMS value at 250 °C, indicating its 

better quality of smoothness. 

Figure 10 shows the RMS and RA values for PECVD and ICP grown silicon nitride under 

various rf-chuck power. It is clearly seen that the RMS and RA values in both cases are much 

lower that grown for various temperatures. The RMS of ICP grown sample is lower than that of 

similar samples grown for various temperatures. However, in both cases the ICP grown samples 

have much lower RMS values indicating better surface quality.

 

(a) (b)

Figure 10. AFM obtained RMS and RA value for silicon nitride grown by (a) PECVD and (b) ICP at various rfpower.

FTIR studies were used to estimate the chemical bonding conditions in the deposited silicon 

nitride films. The IR spectra was recorded in the transmission mode in the range of 400–4000 

cm–1 as shown in figure 11. In all cases the spectra show strong absorption around 850–860 cm–1 

that can be identified with the stretching vibration mode of the Si-N bond (10). The large value 

of the full width half maximum (FWHM) in our study agreed with previously reported values

(15).
9

 (a) (b)

Figure 11. FTIR spectrum of silicon nitride grown by PECVD and ICP at various temperatures.

Additional small absorption bands observed around 480 cm–1 corresponds to the Si-N breathing 

mode. In addition we note the N-H bending mode around 1160 cm–1, Si-H stretching bonds 

around 220 cm–1

, and N-H stretching mode around 3340 cm–1. There may be some small peaks 

present in the spectra corresponding to Si-O stretching mode at 1080 cm–1 which cannot be 

distinguished from the large Si-N stretching mode. A peak at 1140 cm–1 is also present which is 

due to an artifact of silicon substrate. Si-N stretching band mode is prominent and low at 100 C 

and increase substantially for 150, 200, and 250 °C. Figure 12 gives the FTIR spectrum of silicon 

nitride grown at various rf-chuck power .

 

Figure 12. FTIR spectrum of silicon nitride grown by PECVD and ICP at various rf-chuck power.

Unlike the case of the film grown at various temperatures, we can clearly see that the FTIR 

spectrum is very similar in both cases and also that the features are uniformly similar. This can 

be due to increased incorporation of nitrogen atoms in the silicon nitride network layer which 

change the composition of the deposited film from the silicon rich to nitrogen rich environment. 

Observe a decrease in N-H bond concentration as the rf power goes up 2160–2220 cm–1 also 
10

decreases as the applied power increases and for the 40–60 W, because the concentration 

becomes lower.

4. Conclusions

In summary, we have investigated the influence of temperature and rf-chuck power on the 

growth of silicon nitride films by PECVD and ICP growth techniques and compared the results 

for the first time and conclude that the ICP grown silicon nitride films are of better quality 

compared to PECVD grown film. We have deposited good quality silicon nitride films at 100, 

150, 200, and 250 °C temperatures and at 30, 40, 50, and 60 W rf-chuck power. We observed 

thickness of the silicon nitride film linearly increasing, whereas the uniformity change is at a 

higher percentage at the lower power level, while it is at a lower level at a higher power level. 

This indicates that the uniformity of the film is better at higher power of film deposition. The 

morpholgy of the films for the various growth conditions were analyzed through AFM. Surface 

quality substantially improved as the temperature of growth increased. The RMS value showed 

substantial change as the temperature of growth went up. FTIR studies were provided for the 

chemical bonding conditions in the deposited silicon nitride films. The IR spectra was record in 

the transmission mode in the range of 400–4000 cm–1 and in all cases the spectra showed strong 

absorption around 850-860 cm–1 that can be identified with the stretching vibration mode of the 

Si-N bond. The large value of the FWHM in our study agreed with previously reported values. 

Additional small absorption bands observed around 480 cm–1 corresponds to the Si-N breathing 

mode. In addition, we observed the N-H bending mode around 1160 cm–1, Si-H stretching bonds 

around 220 cm–1

, and N-H stretching mode around 3340 cm –1. There may be some small peaks 

present in the spectra corresponding to Si-O stretching mode at 1080 cm–1 which cannot be 

distinguished from the large Si-N stretching mode. A peak at 1140 cm–1 is also present which is 

due to an artifact of silicon substrate. Si-N stretching band mode is prominent and low at 100 °C 

and increase substantially for 150, 200, and 250 °C. In both cases of ICP and PECVD grown 

materials with variable rf-chuck power, the FTIR spectrum showed consistently non-prominent 

peaks indicative of the quality of films. 
11

5. References

1. Wolf, S.; Tauber, R. N. Silicon Processing for the VLSI Era – Vol. I. Process technology 

(Lattice, Sunset Beach, 1986).

2. Sze, S. M. VLSI Technology; McGraw-Hill, New York, 1988.

3. Karabacak, T.; Zhao, Y.-P.; Wang, G.-C.; Lu, T.-M. Phys. Rev B 2002, 66, 075329.

4. Delmotte, F.; Hugon, M. C.; Agius, B.; Courant, J. L. J. Vac. Sci. Technol. B 1997, 15, 

1919.

5. Jonak-Auer, I.; Meisels, R.; Kuchar, F. Infrared. Phys. Technol. 1997, 38, 223.

6. Hannyaloglu, B. F.; Aydil, E. S. J. Vac. Sci. Tech. A 1998, 16, 2794.

7. Garcia, S.; Martin, S. M.; Fernandez, M.; Martil, I.; Gonzales-Diaz, G. J. Vac. Sci. Technol. 

A 1995, 13, 826.

8. Barbour, J. C.; Stein, H. J.; Popov, O. A.; Yoder, M.; Outten, C. A. J. Vac. Sci. Technol. A

1991, 9, 480.

9. Ma, Y.; Yasuda, T.; Lucovsky, G. J. Vac. Sci. Technol. B 1993, 11, 1534.

10. Parsons, G. N.; Souk, J.; Batey, J. J. Appl. Phys. 1993, 74, 3277.

11. Yota, J.; Rao, V.; Feiler, D.; Brongo, M. R.; Ramanathan, V.; Witters, L. J. in Proceedings 

of the Conference of Advanced Metallization and Interconnect Systems for VLSI Applications 

in 1997, Material Research Society, Pittsburgh, 1997.

12. Yota, J.; Brongo, M. R.; Dyer, T. W.; Rafftesaeth, K. R.; Bondur, J. in 1996 Proceedings 

SPIE-Microelectrinic Device and Interconnection Technology II Conference, SPIE, 

Bellighamm1996.

13. Yota, J.; Joshi, A.; Nguyen, C.; Brongo, M. R.; Paladichuk, S.; Paladichuk, J.; Hander, H.;

Badt, D.; Hoang, L.; van. Schravendijk, B.; Park, L. in Proceedings of the 5th International 

Dielectrics for ULSi Multilevel Interconnection Conference, (DUMIC), IMIC, Santa Clara, 

1999.

14. Lee, J. W.; Mckenzie, K. D.; Johnson, D.; Sasserath, J. N.; Pearton, S. J.; Ren, F. Jnl. 

Electrochem. Society 2000, 147, 1481.

15. Serikawa, T.; Okamoto, A. J. Electrochem. Soc. 1975, 131, 2928.
12

List of Symbols, Abbreviations, and Acronyms

c-Si crystalline-silicon

ICP inductively coupled plasma

LPCVD low pressure chemical vapor deposition

FWHM full width half maximum

PECVD plasma enhanced chemical vapor deposition
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ATTN RDRL SED P K JONES

ATTN RDRL SEE E K ALIBERTI

ATTN RDRL SEE E T ALEXANDER

ATTN RDRL SEE E N GUPTA 

ATTN RDRL SEE E R TOBER

ATTN RDRL SEE G WOOD

ATTN RDRL SEE I S TRIVEDI

ATTN RDRL SEE I B ZANDI

ATTN RDRL SEE I D BEEKMAN

ATTN RDRL SEE I F SEMENDY

(5 COPIES)

ATTN RDRL SEE I G BRILL

ATTN RDRL SEE I J LITTLE

ATTN RDRL SEE I K K CHOI

ATTN RDRL SEE I K OLVER
14

NO. OF

COPIES ORGANIZATION

ATTN RDRL SEE I P FOLKES

ATTN RDRL SEE I P TAYLOR

ATTN RDRL SEE I P UPPAL

ATTN RDRL SEE I S FARRELL

(3 COPIES)

ATTN RDRL SEE I S SVENSSON 

ATTN RDRL SEE I W BECK

ATTN RDRL SEE I W SARNEY

ATTN RDRL SEE I Y CHEN

ATTN RDRL SEE M G DANG

ATTN RDRL SEE M G GARRETT

ATTN RDRL SEE M M REED

ATTN RDRL SEE M M WRABACK

ATTN RDRL SEE M N BAMBHA

ATTN RDRL SEE M N DAS

ATTN RDRL SEE M P SHEN

ATTN RDRL SEE M W CHANG

ATTN RDRL SEE O N FELL 

ATTN RDRL SEE O P PELLEGRINO

ATTN RDRL SEE P GILLESPIE

ATTN RDRL SEG N MARK

(3 COPIES)

ATTN RDRL SER E A DARWISH

ATTN RDRL SER E P SHAH

ATTN RDRL SER L A WICKENDEN

ATTN RDRL SER L B NICHOLS

ATTN RDRL SER L E ZAKAR

ATTN RDRL SER L M DUBEY

ATTN RDRL SER L M ERVIN

ATTN RDRL SER L S KILPATRICK

ATTN RDRL SER P AMIRTHARAJ

ATTN RDRL SER U C FAZI

ATTN RDRL SER U J COSTANZA

ATTN RDRLSEE M 

M TAYSING-LARA

ADELPHI MD 20783-1197

TOTAL: 76 (74 HCS, 1 CD, 1 ELECT)