/

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CO p NBS TECHNICAL NOTE 983

^^fAU Of

U.S. DEPARTMENT OF COMMERCE/ National Bureau of Standards
NATIONAL BUREAU OF STANDARDS

The National Bureau of Standards' was established by an act of Congress March 3, 1901. The

Bureau's overall goal is to strengthen and advance the Nation's science and technology and

facilitate their effective application for public benefit. To this end, the Bureau conducts

research and provides: (1) a basis for the Nation's physical measurement system, (2) scientific and technological services for industry and government, (3) a technical basis for equity in trade, and (4) technical services to promote public safety. The Bureau's technical work is performed by the National Measurement Laboratory, the National Engineering Laboratory,

and the Institute for Computer Sciences and Technology.

THE NATIONAL MEASUREMENT LABORATORY provides the national system of

physical and chemical and materials measurement; coordinates the system with measurement

systems of other nations and furnishes essential services leading to accurate and uniform

physical and chemical measurement throughout the Nation's scientific community, industry,

and commerce; conducts materials research leading to improved methods of measurement,

standards, and data on the properties of materials needed by industry, commerce, educational

institutions, and Government; provides advisory and research services to other Government

Agencies; develops, produces, and distributes Standard Reference Materials; and provides

calibration services. The Laboratory consists of the following centers:

Absolute Physical Quantities^ — Radiation Research — Thermodynamics and

Molecular Science — Analytical Chemistry — Materials Science. THE NATIONAL ENGINEERING LABORATORY provides technology and technical

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in support of objectives in these efforts; builds and maintains competence in the necessary

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proposes new engineering practices; and develops and improves mechanisms to transfer

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Engineering and Process Technology^ — Building Technology — Fire Research —

Consumer Product Technology — Field Methods.

THE INSTITUTE FOR COMPUTER SCIENCES AND TECHNOLOGY conducts

research and provides scientific and technical services to aid Federal Agencies in the selection, acquisition, application, and use of computer technology to improve effectiveness and

economy in Government operations in accordance with Public Law 89-306 (40 U.S.C. 759), relevant Executive Orders, and other directives; carries out this mission by managing the Federal Information Processing Standards Program, developing Federal ADP standards

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The Institute consists of the following divisions:

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'Headquarters and Laboratories at Gaithersburg, Maryland, unless otherwise noted; mailing address Washington,D.C. 20234. ^Some divisions within the center are located at Boulder, Colorado, 80303.

The National Bureau of Standards was reorganized, effective April 9, 1978.
lNrf;iwiioi wu' ""^ OCT 18 1979^

Properties of Selected Superconductive Materials

^^'^^^

1978 Supplement

^^ ^"^

^n ecW^^l Ctifi K^^^, v^ . ^ ^-3*

B. W. Roberts

Superconductive Materials Data Center

General Electric Corporate Research and Development

P.O. Box 8, Schenectady, NY 12301

(Extends Survey of Superconductive Materials and Critical Evaluation of Selected Properties, B. W. Roberts, J. Phys.

Chem. Ref. Data 5, 581 (1976) and supersedes NBS Tecnnical Note 825.)

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^fBAiy O^ *

U.S. DEPARTMENT OF COMMERCE, Juanita M. Kreps, Secretary

Dr. Sidney Harman, Under Secretary

Jordan J. Baruch, Assistant Secretary for Science and Technology

I U^' NATIONAL BUREAU OF STANDARDS, Ernest Ambler, Director

lssue(d October 1978
National Bureau of Standards Technical Note 983

Nat. Bur. Stand. (U.S.), Tech. Note 983, 99 pages (October 1978) CODEN: NBTNAE

For sale by the Superintendent of Documents, U.S. Government Printing Office Washington, B.C. 20402 - Price $2.75 Stock No. 003-003-01988-7
CONTENTS

Page

Introduction 1

BciCkground 1

General Properties of Superconductors 2

New Developments in Superconductive Materials 4

Metallurgical and Solid-State Aspects of Superconductive Materials 7

How to Use the Data Tables. 8

Symbols and Abbreviations 9

Acknowledgments 10

Table 1 (a). Properties of the Superconductive Elements (See Table 2 for recent References, Crystal Structure Data, and Parameters of Non-Superconductive Elements where Tested) 11

Table 1 (b). Range of Critical Temperatures Observed for Superconductive

Elements in Thin Films Condensed Usually at Low Temperatures 12

Table 1 (c). Elements Exhibiting Superconductivity Under or After Application of High Pressure 13

Table 2. Properties of Superconductive Materials (including those proven non-superconductive) 14

Table 3. Properties of Superconductive Materials with Organic and Related Constituents 55

Table 4. Critical Magnetic Fields H , , H , H „ and H , of Superconductive

Materials (Mainly Type II)'^! 57

Bibliography 64

Recent Review Articles and Books Centering Upon Superconductive Materials 79

Author Index 8T

1 1

PROPERTIES OF SELECTED SUPERCONDUCTIVE MATERIALS 1978 SUPPLEMENT*

\ B. W. Roberts

This report includes data on additional superconductive materials extracted from the world literature

up to fall 1977 and is an addendum to the data set published in J. Phys. Chem. Ref. Data 5^, #3, 581-821

(1976) (Reprint #84). The data presented are new values and have not been selected or compared to values

(except for selected values of the elements) previously assembled by the Superconductive Materials Data

Center. The properties included are composition, critical temperature, critical magnetic field, crystal structure and the results of negat;ve experiments. Special tabulations of high magnetic field materials

with Type II behavior and materials with organic components are included. All entries are keyed to the literature. A list of recent reviews centered on superconductive materials is included.

Keywords: Bibliography; composition; critical fields; critical temperature; crystal lographic data; data

compilation; low temperature; superconductive materials; superconductivity.

INTRODUCTION

This Technical Note extends the data set on superconductive materials published in Journal of Physical

and Chemical Reference Data 5^, #3, 581-821 (1976)**. Because the world activity in the study of super- conductive materials continues at a high rate a few hundred references are in hand awaiting translation or delivery of the original.

It is hoped that the users of these data will inform the author of needed corrections, deletions and additional information which may include unpublished results to be included and '-eferenced under the contributor's name and/or institution.

BACKGROUND

Nearly seventy years of research on the phenomena of superconductivity has led to a substantial

technical utilization in coils to produce large magnetic fields in special configurations. A major user

and benefactor has been the very high energy particle physicist who by judicious choice and substitution

of superconductive coils has been able to produce suitable magnetic fields to upgrade accelerators to the next round of particle energies. This substitution has been possible in an era of decreasing resources

because of magnet size and operating power cost reduction. Other high field applications include test

train car levitation in Japan and Germany, superconductive motors to test drive pumps and propel ocean vessels and recently the assignment of contracts to build three large prototype fusion reactor magnet

sectors at about $5x10 each. The applicati

prototype generators in the planning stages.

sectors at about $5x10 each. The application to alternating current devices is progressing with larger

*rhis work has been partially supported by the NBS Office of Standard Reference Data.

'*Avai1able as Reprint #84 from the American Chemical Society, 1155 Sixteenth Street, N. W. , Washington,

D. C. 20036 at $12.50 U.S. prepaid.
Laboratory research magnets have attained 177 kG in a Nb,Sn-V-jGa assembly and 301 kG in a hybrid

magnet.

On the micro scale a serious study is underway on the possible use of the Josephson junction in a com- puter with increased speeds of 2 or 3 orders of magnitude.

A series of superconductive temperature standards provided by NBS are gaining more widespread

application.

Active study of superconductive materials continued throughout the world in anticipation of applications.

The 1976 Applied Superconductivity Conference at Stanford University attracted 330 papers of which 230 are published in IEEE Transactions of f^agnetics. Vol. MAG-13, No. 1, January 1977 (938 pages).

Prof. John Bardeen was denoted 1976 Scientist of the year by Industrial Research (See Ind. Res.

pp. 37-42 Nov. 1976).

GENERAL PROPERTIES OF SUPERCONDUCTORS

The historically first observed and most distincti\'e property of a superconductive body is the near total loss of resistance at a critical tem- perature T characteristic of each material.

Figure 1 illustrates schematically, two types of possible transitions. The sharp vertical discontinuity is indicative of that found for a single crystal of a very pure element or one of

a few well annealed alloy compositions. The

broad transition, illustrated by broken lines, is typical of the transition shape seen for materials

which are inhomogeneous or contain unusual strain distributions. The temperature interval, over

which the transition between the normal and superconductive states takes place, may be of the

_5 order of as little as 2x10 K or several K in width, depending upon the material state. The narrow transition width was observed in 99.9999%

purity gallium single crystals.

Careful testing of the resistivity limit for superconductors has shown that it is less than

-25

4x10 ohm-m, while the lowest normal state resistivity observed in metals is of the order

-15

of 10 ohm-m. Comparison of the resistivity

of a superconductive body to that of copper at room temperature reveals that the superconductive

1 7 body is at least 10 times less resistive.

A Type I superconductive body, as exemplified

by many pure metals, exhibits perfect

diamagnetism (the Meissner state) below T and excludes a magnetic field up to some critical

field H , whereupon it reverts to the normal state es shown in the H-T diagram of figure 1.

MEiSSNER [mixed | SHEATH | NORMAL

Figure 1 . Physical properties of superconductors,

(a) Resistivity versus temperature for a pure and perfect lattice (solid line). Impure and/or

imperfect lattice (dashed line), (b) Magnetic

field-temperature dependence for Type I or "soft" superconductor, (c) Schematic magnetization curve for "hard" or Type II superconductor
The discovery of the high-magnetic-field large-current-carrying capability of Nb,Sn and other compounds

and alloys has led to an extensive study of their physical properties. In brief, a high magnetic field

superconductor, or Type II superconductor, passes from the perfect diamagnetic state at lov; magnetic fields

to a mixed state and finally to a sheath state before attaining the normal resistive state of the metal.

The magnetization of a typical high-field superconductor is shown in figure 1. The magnetic field values separating the four stages are given as H.-, , H -> and H ^^ The superconductive state below H , is perfectly

diamagnetic and identical to the state of most pure metals of Type I. Between H •, and H ^ a "mixed state"

is found in which magnetic flux penetrates the superconductor in a nonuniform manner. Specifically, a lattice array of supercurrent vortices is formed, the magnetic flux contained within each vortex cell being

-7 2 equal to the magnetic flux quantum ('^-2x10 gauss cm ). At H ^ the fluxon density has become so great as to drive the interior volume of the material completely normal. Between H „ and H •, the superconductor has a sheath of current carrying superconductive material at its surface, and above H , the normal conducting state exists throughout the material. With careful measurement, it is possible to determine H •, , ri «> and H ,. Table 4 contains data on high field superconductive mat3rials.

A more complete representation of the states present in a high field superconductor is given in figure

2 with the additional phenomenon called fluctuation superconductivity. The latter phenomenon is evidenced in

several physical properties above PHASE DIAGRAM

the appropriate critical fields

and critical temperatures.

High field superconductive

phenomena are also related to specimen dimension and configuration. For instance, the Type I superconductor,

Hg, has entirely different magnetization behavior in high magnetic

fields when contained in the very

fine set of filamentary tunnels in an unprocessed Vycor glass. The great majority of superconductive

materials are Type II. Most, but

not all, elements in \-ery pure

form are Type I. A further complication exists

in the description of superconductive

materials. In some instances a transition from Type II behavior to Type I behavior occurs as temperature

is Increased between absolute zero

and T . cThis survey has included the parameters T^, H^, H^^, H^^, H^^

and has noted the crystal structure

by code or crystal system. The

values of H are sometimes noted

c to be taken at a specific tem- perature below T and denoted i t^^-

Type I

Meissner

Very Weak

Fluctuation

SupeF;conductivity

Normal

Type n:

Sheath

Mixed

Meissner

Fluctuation

Superconductivity

Figure 2 . H-T phase diagram representation of Type I and Type II superconductors with locations for fluctuation superconductivity

indicated. (R. R. Hake, personal communication and J. Applied

Phys. 40, 5148 (1969). "The Thermodynamics of Type I and Type II Superconductors.")
Hg is Hj, extrapolated to K. Methods of extrapolation are critical in the case of high-magnetic-field

parameters H ,, H p. and H ,. The metallurgy, chemistry, and physics of superconductors is a complex and sometimes subtle subject.

Therefore, readers are referred to the many texts and review articles listed in Reprint #84 and the "Recent

Reviews" section of this report for complete and additional information. "Superconductivity" by E. A. Lynton (Metheun and Co,, London; John Wiley and Co., New York) is a brief and useful introduction. For additional general information see "Superconducting Materials" by E. M. Savitskii, V. V. Baron, Yu. V. Efimov, M. I. Bychkova, and L. F. Myzenkova (Plenum Press, New York-London, 1973); an updated translation

of "Metal lovedenie Sverkhprovodyashchikh Materialov" (Nauka Press, Moscow, 1969); "The Science and Technology of Superconductivity" Vol. 1 and 2, edited by W. D. Gregory, W. N. Mathews, Jr., and E. A. Edelsack (Plenum, New York-London, 1973) and "The Effect of Metallurgical Variables on Superconducting

Properties", J. D. Livingston and H. W. Schadler in Progr. Materials Sci. (G. B.), Vol. 12, No. 3, 185-274

(1964). For theoretical aspects start with "Superconductivity", Vols. 1 and 2, edited by R. D. Parks,

(Marcel Dekker, New York, i969).

NEW DEVELOPMENTS IN SUPERCONDUCTIVE MATERIALS

The discovery of the high probability of superconductivity in the Chevrel phases, M MOgSg, where M is a metallic atom, has broadened to 51 entries in Table 2. The highest T reported is 14. 7K for PbMo^Sc, and ^ c ' 6 8 even though lower than the highest T in A-15 compounds, the critical fields have been found to be 50% higher (see Figure 3). A modification,

196, 966-8, 1977.)

PbGdg 2''''°6^8' ^°'^ '"^ ^c2 ^^ ^'^ °^ greater than 600kG. (See Science

A series of ternary borides has been described

of form (RE)Rh.B» with critical temperatures in the range of 2.5 to 11. 9K where (RE) denotes a rare earth element. And most exciting is the discovery

that ErRh.B, of the series is the first single

phase re-entrant superconductor which is normal to 8.7K, superconductive from 8.7 to 0.9K and ferri- magnetic below 0.9K. Careful study of this system

should answer several of the scientific puzzles in relating the superconductive and magnetic states (Science |9£, 966-8 (1977) and B. T. Matthias,

E. Corenzwit, J. M. Vanaenberg and H. E. Barz, Proc.

Nat. Acad. Sci., USA 74, 1334-5 (1977)).

A tantalizing observation in the Nb-,Ge preparation series suggests further careful study.

R. D. Blaugher (to be published) has observed an onset T of 25. 6K in a single Nb.,Ge film annealed

for a substantial time. Efforts to reproduce the properties have not been successful and are still underway. Blaugher believes that the sample with

the 25.6 K critical temperature will be reproduced

and that it is part of a distribution dependent

upon subtle composition or preparation variables.

A series of studies have developed a "standard"

curve of T decrease as a function of irradiation

c

6 a e 12 M 16 TEMPERATURE { 'K )

Figure 3 . Critical magnetic fields versus temperature for selected superconductive materials. (From

Oe. Fischer, Low Temp. Phys. - LT14. Ed. M. Krusius

and M. Vuorio (Amer. Elsevier, N. Y., 1975). Vol. V, page 188).
level in the A15 "compounds. In some instances, total recovery of T has been observed upon annealing.

Thorough investigation of (SN) by several experimental techniques has shown it to be a three dimensional superconductive material with anisotropic properties.

A definitive correlation of the T 's of 28 A15 (A^B) compounds with the phase diagram solid solution

range has been reported. Two groupings are found —those with ranges only on the A-rich side and those

extending on both sides or only on the B-rich side. (F. E. Wang, to be published.)

NbgGe films with high critical temperatures have been found to require oxygen in their preparation or in

their final composition. How the oxygen enhances the material properties has apparently not been specified

(see GeNb-,0 entries in Table 2).

J X

A "round robin" testing for T of sputtered Nb^Ge films has been reported. The midpoint of the super- conductive transition was found to be the most reproducible (see R. Roy and D. A. Rogowski.Phys. Letters 57A , 60-62 (1976)).

Carlo Reale has claimed novel superconductive material results for quench condensed thin films in several papers: Vacuum 27, 3-6 (1977); J. Low Tamp. Phys. 24, 289-95 (1976); Appl. Phys. Letters 27, 157-8

(1975); Thin Solid Films 28, L29-30 (1975);"'' Acta Physica Acad. Sci. Hung. 37, 53-60 (1974); Phys. Letters

57A , 65-6 (1976); 55A, 165 (1975)"^ and 51A, 353-4 (1975)^ A selection of his reported findings are listed

in Table A with film thickness range and are compared to literature data as well as recent negative

experimental data of N. Jacobsen, C. G. Granovist and T. Claeson (Z. Physik 825, 265-8 (1976))* and M. Belzon;

R. Blanc and R. Payan, C.R. Acad. Sc. Paris ^83B , 241-4 (1976) in reference To~magnesium.

Table A. Comparison of T determinations for some alkali metals, alkaline earth metals and lanthanides.

(After Jacobsen, Granqvist and Claeson)

Results icmby Reale (t) Thickness

o

Literature

Data This

Icm

Investigation*

Metal Icm Thickness [A]

Li 2.4-1.1 100-2000

Be 9.2-3.7 100-2000 6-9.95

Mg 5.5 100 <0.35 <0.32

<1.5

200,300

Ca 4.3 100 <2

Sr 3.6 100 <2

Cs 1.05-0.4 100-2000

Ba 3.0 100 <0.35 100-1000

La 9.8-6.8 100-2100 4.5

Ce 5.8-3.0 100-2100 <1.5 <0.32 200-700

Pr 5.0-2.5 100-2100 <0.33 200-1000

Nd 4.6-2.1 100-2100 <0.33 300

Eu 3.4-1.7 100-2100

Yb 2.9-1.4 100-2100 <1.5 <0.35 200-600
A new type of "superconducting domain" in a bulk insulating state has been claimed to explain several electrical and magnetic measurements in compounds such as sodium dio^ycholate and sodium cholinate.

Changes in properties are observed at temperatures up to 277K for the latter (see Proc. IEEE, March 1976,

pp. 357-359 and Physiol. Chem. Phys. 8, 135-42 (1976)).

Intensive study of a variety of organic compounds such as (TTF)(TCNQ) and (TSeF)(TCNQ) has continued.

The latter is one of the most electrically conductive materials discovered. At room temperature it has a conductivity of 800 (ohm-cm)" and a peak value at 40K. A superconductive organic material has not been

claimed. (IBM Research Highlights, October, 1975^) (Chemical and Engineering News July 4, 1977, pp. 14-17.

The calibration and the standardization of techniques and temperatures for the measurement of superconductive critical temperatures has been widely accepted and continues the work of R. J. Soulen, Jr. and J. H. Colwell (J. Low Temp. Phys. 5^, 325 (1971)) and J. F. Schooley and R. J. Soulen, Jr. (Proc. 12th

Intern. Conf. on Low Temp. Phys. (Academic Press of Japan, Tokyo, 1971) and the XIII Inter. Congress of Refrigeration, pp. 192-198). They have carefully measured, compared and tested the reproducibility and width of the critical temperature of Pb, In, Al, Zn and Cd for thermometric fixed points as well as having

looked very carefully at the equivalence of the transition temperature when measured by the three techniques:

(1) Electrical resistance, (2) magnetic susceptibility and (3) heat-capacity measurements. In the case of well-annealed polycrystalline and pure (99.999%) indium they find that the midpoints of each type transition

are identical to within 0.1 mK. Arrangements have been made to provide cryogenic experimenters with samples

and devices through the NBS Office of Standard Reference Materials. (NBS Special Publication 260-44,

"Preparation and Use of Superconductive Fixed Point Devices SRM 767." Superintendent of Documents, U. S. Government Printing Office, Washington, D. C. 20402. (Order by SD Catalog No. C13, 10:260-44.) Price

75 cents.

)
METALLURGICAL AND SOLID-STATE ASPECTS OF SUPERCONDUCTIVE MATERIALS

The sensitivity of superconductive properties to the material state is most pronounced and has been used on occasion in the reverse to study and specify the detailed state of alloys. The mechanical state, the homogeneity, and the presence of impurity atoms and other electron-scattering centers are all capable

of controlling the critical temperature, critical

field, and the current-carrying capabilities in high magnetic fields. Well-annealed specimens

usually show sharper transitions than those that

are strained or inhomogeneous. This sensitivity

to mechanical state underlies a general problem

in the tabulation of properties of superconductive

materials. The occasional divergent values of

the critical temperature and of the critical

fields quoted for a Type II superconductor may

lie in the variation in sample preparation.

Critical temperatures of materials studied early

in the history of superconductivity must be evaluated in light of the probable metallurgical

state of the material as well as the availability

of less-pure starting elements. It has been noted that recent work has given extended con- sideration to the metallurgical aspects of sample

preparation as well as to ingenious application of new and exotic materials preparation techniques

to obtain the desired high critical temperatures

and high critical magnetic fields. Figure 4 outlines

the onset critical temperature as a function of

the effective quenching or cooling rate for Nb,Ge alloys as research exploration continued to yield higher and higher values of T . See the

26

24

22

o

20 o

18

"Sco 16

g, 1 14 ac« 12

o.3

«/) 10

8

6 -

1 1 1 1 1 1 1

Evaporation, j

Sputtering, & k- -< - CVD 1

"Splat" Cooling j-Jh

T . Effective Quench Produced 1 By Pressure Reaction

hJ-i Fast Quenching into Ga

.T. Ordinary Furnace - TT" Quenching

1 1 1 1 1 1 1 . 10' 10-^ 10 10 10

(deg. C/sec)

10' 108

section on new developments for further conment

on the Nb3Ge system.

Figure 4 . Onset critical temperature as function of quenching or cooling rate of various Nb3Ge preparations (From R. D. Blaugher, IEEE Trans. Magn.

MAG-13, 821 (1977)).
HOW TO USE THE DATA TABLES *

Properties of the superconductive elements are covered in table 1(a) for bulk values, 1(b) for thinfilm preparations, and 1(c) for high-pressure modifications and metastable forms prepared by the application

of high pressure. Metallic and inorganic materials including the elements are listed and referenced in table 2 except

that superconductive materials with organic and related constituents are cited in table 3. Tables 1 through 3 contain references to "HF" signifying that critical magnetic-field data H ,, H „. or H , are reported in table 4 with appropriate references to the literature.

Tables 2 through 4 list the bulk material values for alloy systems first, then results of special studies such as pressure or dispersal in porous media, and finally, thin-film data with notations of

o temperature of deposition and film thickness in Angstroms(A)

.

The probable error limits are given for most of the bulk elements in table 1(a) and are derived from

all the values collected in the data set. The procedure to determine error limits included the assembly

of all acquired data on an element. Where possible, a selection was made of data obtained on samples with recorded high purity. If a sufficient number of values were available, the standard deviation was determined and listed. Error limits in a few instances were increased over the standard deviation if

the element was known to be difficult of purification.

Tables 2-3 contain data on negative experiments in the column headed "T ", which is the temperature

in K down to which the material has been checked specifically for a superconductive transition without

success. If a material has been found to be only ferrimagnetic, anti ferromagnetic, or ferromagnetic it

has not been included in this survey.

All compositions are denoted on an atomic basis; i.e., one atomic weight of A and one of B to form

the AB composition. Exceptions are noted. Solid solutions or a range of compositions may be denoted

as A, B or ^^y^l-x-v' ^^ ^^ ^^^ actual atomic fraction range such as Atq 4Bq_q g. The critical temperature or magnetic fields may then be denoted either by a range of values or a maximum value (Max.). A continuing point of difficulty lies in the method of selecting T from an experimental transition measurement whether it be the change in effective permeability, resistance, optical reflectivity, electron diffraction signal, specific heat or ultrasonic absorption. Most authors choose the midpoint of the curve (fig. 1(a)), but in the search for very high T materials often the "onset" temperature is chosen

as the critical temperature. Some authors quote the width of the transition, and where a single alloy

and single reference is given a range in T denotes the upper and lower limits to the transition. Table 3 contains those special superconductive materials containing organic constituents. Most of

the entries are layered compounds with an intercalated organic substance. These special materials exhibit

both two- and three-dimensional superconductivity and have highly anisotropic high magnetic field properties.

In some instances a single line in a table will summarize the discoveries and measurements of two or three full research papers. It is therefore probable and reasonable for the researcher to explore the original references to obtain a full background of the abstracted data. For problems in solders for low- temperature research, the paper by W. H. Warren, Jr. and W. G. Bader

(Rev. Sci. Instruments 40, 180 (1959) is useful. Also see Meijer, H. C. , Bots, G.J.C. and Coops, G. M. Proc. of Sixth Inter. Cryogenic Eng. Cong. (Paper Kll) 6, 404-5 (1976).

*The NBS Office of Standard Reference Data, as administrator of the National Standard Reference Data System,

has officially adopted the use of SI units for all NSRDS publications, in accordance with NBS practice.

This publication does not use SI units uniformly because contractual cotrmitments with the author predate

establishment of a firm policy on their use by NBS. Some appropriate conversion factors will be found in Tables 1 and 2. We urge that specialists and other users of data in this field accustom themselves to SI units as rapidly as possible.
^ SYMBOLS AND ABBREVIATIONS (RELATING TO TABLES 1 TO 4 )

T^ The lowest tatiperature to which a material has been tested with negative results for a transition to the superconductive state.

V Given in front of reference number, it denotes a thin-film study.

# After a reference number indicates electronic specific heat, Debye theta or related parameter values are given in the reference. See end of table 1(a) for general references

to these data.

n, p Denotes the number of carriers per cubic centimeter in semiconductors that exhibit a superconductive state at very low temperature.

T'(...) Denotes incremental changes in temperature (K) from T of the pure metal. For example,

T' (+0.05) denotes that two or more measurements have been made by adding a small amount

of alloying element to a metal to form a dilute alloy (or mixture) and in so doing T has been raised by 0.05K. V (-0.03+0.14) denotes an initial decrease and then an increase to 0.14K over the pure metal.

P Denotes pressure (quoted in kbar: may be rounded units of katm or other unit).

ppm Parts per million.

T . Denotes temperature of observation of H , H-,, H -j and H^.

oersted Is equivalent to 79.57 amperes/meter.

RRR Denotes "residual resistivity ratio" and is used only as an indicator of sample purity.

In most instances it is the room temperature resistivity divided by the resistivity at

4.2K. The original reference should be consulted for details.

o - 10 -8

A Denotes 10 m or 10" cm or one Angstrom unit.

Max. Indicates that the value given is the maximum value of 3 or more measured values of a variable.

Crystal lographic System Abbreviations

CUB Cubic

TET Tetragonal :

HEX Hexagonal

ORTHC Orthorhombic

MONO Monoclinic

RHOMB Rhombohedral (sometimes described in hexagonal format)

TRI Tri clinic

The "Strukturbericht" types are described in W. B. Pearson, Handbook of Lattice Spacings and Structures of Metals (Pergamon, New York, 1958), p. 79, also Vol. II (Pergamon, New York, 1967) p. 3. A condensed set is also presented in Reprint #84 (see abstract for this report.).
ACKNOWLEDGMENTS

Inputs on corrections, helpful suggestions and the submission of reprints and data have been received from: T. Claeson, C. Rosner, P. Swartz, A. R. Moodenbaugh, R. A. Koehler, C. W. Chu, D. U. Gubser, F. Hulliger, I. Chapnik, D. Johnson, A. Z. Kurmaev, K. Yasukochi , R. Akihama, C. C. Tsuei

,

T. B. Reed, C. Probst, S. F. Meyer, M. Moss, F. Meunier, N. V. Ageev, C. C. Koch, T. H. Geballe,

J. L. Smith, E. M. Savitskii, F. E. Wang, J. E. Cox, D. Dew-Hughes, J. R.Gavaler, L. R. Testardi,

J. D. Livingston, E. Saur, 0. Rapp, K. Inoue, K. Tachikawa, N.' E. Alekseevski i , F, L. Carter,

T. L. Francavilla, B, F. Maddock, R. Viswanathan, B. T. Matthias and others if inadvertently omitted.

The continued excellent assistance of Miss Vera Chase, Chief Research Librarian, and Miss Judy

Lent and all of our fine library staff is gratefully acknowledged. Works on superconductivity are found in unusual and extraneous publications.

Mrs. Mary Dean has steadfastly and resolutely set up and typed the very long tables and difficult

material of this report and D. N. Wemple has proofread much of it.

10
TABLE i(a). Properties of the Superconductive Elements (See Tab! Structure Data, and Parameters of Non-Superconductiv

e 2 for recent

e Elements whe; References, Crysti

'e tested)

Element T^IK) H^{ oersted) 9d(K)'

) Y(mJmor^K"b^

Al 1.75+0.002 104.9±0.3 420 1.35 Am* (a,?) 0.6

Am* (e,?) 1.0

Be 0.026 0.21

Cd 0.517±0.002 28±1 209 0.69

Ga 1.083±0.001 58.3±0.2 325 0.60

Ga (g) 5.9,6.2 560

Ga (y) 7 950, HF^

Ga (A) 7.85 815, HF

Hf 0.128 12.7 2.21

Hg(a) 4.154±0.001 411±2 87,71,,9 1.81

Hg (3) 3.949 339 93 1.37

In 3.408±0.001 281. 5±2 109 1.672

Ir 0.1125±0.001 16±0.05 425 3.19

La (a) 4.88±0.02 800±I0 151 9.8

La (e) 6.00+0.1 1096,1600 139 11.3

Lu 0.1±0.03 350±50

Mo 0.915+0.005 96±3 460 1.83

Nb 9.2510.02 2060+50, HF 276 7.80

OS 0.66+0.03 70 500 2.35

Pa 1.4

Pb 7.196+0.006 803±1 96 3.1

Re 1.697±0.006 200+5 4.5 2.35

Ru 0.49±0.015 69±2 580 2.8

Sn 3.722±0.001 305±2 195 1.78

Ta 4.47±0.04 829±6 258 6.15

Tc 7.8+0.1 1410, HF 411 6.28

Th 1.38+0.02 160±3 165 4.32

Ti 0.40±0.04 56 415 3.3

Tl 2.38+0.02 178±2 78.5 1.47

V 5.4C±0.05 1408 383 9.82

W 0.0154±0.0005 1.15+0.03 383 0.90

*0.L. Smith and R.G. Haire, Science 200, 535-6 (1978).

n
TABLE 1(a) (continued)

Element T (K)

Zn 0.85+0.01

Zr 0.61±0.15

Zr (u) 0.6E, 0.95

H (oersted) eQ(K)

54±0.3 310

47 290

Y(n-iJmor\'^)''

0.66

2.77

HF denotes high field superconductive properties. See Table 4 for recent values.

'^For a complete data set, see ^hill-jps, N. E. , Critical Reviews in Solid State Sciences Z, 467-554

(1972), "Low Temperature Heat Capacity of Metals." Also Mendelssohn, K. , in Cryophysics (Interscience, New York, 1960), p. 178, Gschneidner, K. A. Jr., in Solid State Physics 16, 275-426 (1954), Parkinson,

D. H., Rep. Progr. Phys. 2J_, 225 (1958) and Heiniger, F., Bucher, E., and Muller, J. "Low Temperature

Specific Heat of Transition Metals and Alloys" Phys. Kondens. Materie 5_, 243-284 (1966).

TABLE 1(b). Range of Critical Temperatures

Observed for Superconductive

Elements in Thin Films Condensed

Usually at Low Temperatures (See Table 2 for Recent Data and References end Table 4 for "HF" Critical Magnetic Field Property

Data)

E 1 emen t

Al

Be

Bi

Cd(Disordered) 0.79-0.91

(Ordered) 0.53-0.59

T^Range (K)

1.15-~5.7

5-9.75

5.17-2.5

Ga

Hg

In

La

Mo

Nb

Pb

Re

Sn

2.5-8.5

3.87-4.5

2.2-5.6

3.55-6.74

3.3-8.0

2.0-10.1

1.8-7.5 1.7—7

3.5-~6

H (oersted)

HF°

HF

HF

HF

TABLE UblCconttnuedl

Element

Ta

Tc

Ti

Tl

V

W

Zn

T^Range (K)

< 1.7-4.51

4.6-7.7

1.3 Max

2.33-2.96

1.8-6.02

< 1.0-4.1

0.77-1.70,-1.9

H (oersted)

HF

HF denotes high magnetic field superconductive

properties in Table 4.

12
\ TABLE 1(c). Elements Exhibiting Superconductivity

Under or After Application of High Pressure (See Table 2 for Recent

References, Table 4 for "HF" Critical

Magnetic Field Properties)

TABLE l(c)(continued).

Element T^Range (K) Pressure (kbar)

Al 1.98-0.075 0-62

As 0.31-0.5 220-140

0.2-0.25 -140-100

Ba II -1-1.8 -.55-85

III 1.8-5 -85-144

IV 4.5-5.4 144-190

Bi II 3.9 25-27

III 6.55-7.25 28-38

IV 7.0,8.7-6.0 43,43-62

V 6.7,8.3 48-80

VI 8.55 90,92-101

VII(?) 8.2 30

Ce (a) 0.020-0.045 20-35

Ce (a') 1.9-1.3 45-125

Cs V -1.5 >125

Ga II 6.38 ^35 W 7.5 -35 then P removed

Ge 5.35 115

La -.5.5-12.9 0-210

Lu 0.022-1.0 45-190

P 5.8 170

Pb II 3.55 160

Re II

Sb(Prepared

120 kbar, held below 77K)

2.3 Max.

2.6-2.7

"Plastic"

compression

Sb III 3.55-3.40 85-150

Se II 6.75,6.95 -130

Si 6.7-7.1 120-130

Element Tj,Range(K) Pressure(kbar)

Sn II 5.2-4.85 125-160

III 5.30 113

Te II 2.4-5.1 38-55

III 4.1-4.2 -53-62

IV 4.72-4 63-80

( ) 3.3-2.8 100-260

Tl (cubic form) 1.45 35

(hexag(

form)

Dnal 1.95 35

U 2.4-0.4 10-85

Y 2.3-1.7-2.5 110-125-160

Zr(omega form,

metastable) 1-1.7 60-130

^ 1 kbar = 10^ newton/meter^ = 0.987 katm

13
TABLE 2. Properties of Superconductive Materials (including those proven non-superconductive)

Note: "HF" signifies critical magnetic field data in Table IV.

Material T,(K)

^^0 (oersted)

Crystal

Ag

'^90.82'^^ 0.18

'^S^^ 0-0.8^^2^" 1-0.

2

0.022

5.68-5.68, 5.81-5.82

^90-0.4'^^''^l-0.6

(If^Pl^nt)

Ag^

Ag,

'^Sq, 895-0. 828*^^0. 105-0. 172

10-14.5-4

0.0065-0.116

0.0248

Agg cGeQ c (Quench condensed) 1.2

Ago cGeQ J^r (Implant) 2.5 (Quench condensed)

^0.92''^0.08

'^V0.4"xP^l-0.6 (I-^Plant)

^^^0. 05^0. 8-0. 89'''^

^^^O. 1-0. 34^0. 5-0.85''*^

^^90.81 ^"0.19 AgLu

AgMo^Sg

'^90-0.02'^''0.33^^0.66 AgSg 2^6^ gSn

'^90.9^.2^^1.8^"l.l

AgSb^_QSe2SnQ_^

AgSc

'^9i.l-0.7^^2^"0.9-1.3

AgSegSn

Ag

Ag

'^5l-0.81^^2^"l-1.19

1-0.8^^2. 1-1. 9^"l-l.

2

^^90.8^^1.9^"!. 2

^^90.8^^5" 1.2 AgY

9-15-9

2.2-4.3

0.0074

8.9

5.90-5.55(Quenched)

5.79-5.72(Plus 400C)

6.79-6.54

<1.5-5.5

4.6-6.9-6.5 (Quenched) 4.5-4.5-5.6-5.5 (Annealed) 6.2-6.5 (Anneal 500C)

HF

.22,

4.71

4.71-6.47 (n = 1.1-1.7x10^")

6.96-5.4

6.96

6.75

Structure T,(K) Refs

2070

2147

2411

2347

2070

2147

^2365 ^2365

2347

2325

1.4 2325

2070

B2 0.04 2006

RHOMB 2287

2262

81 2411

B1 2411

B1 2411

B2 0.04 2006

Bl 2411

Bl 2411

Bl 2411

2411

Bl 2411

Bl

B2 0.04

2411

2006

14
TABLE 2 (continued)

Material T^.(K)

^90.70^"0.30 0.0125

'^50.265^"0.735 0.18

'^9o.205^"o.775 0.17

^^^o. 155^" 0.845 0.090

'^50.125^"0.875 0.100

'^^O. 13-0. 305^"0. 07-0. 695 0.10-0.09-0.19

A1(150-50A diam.

)

1.5-2.5 AKIOOA diam.) 1.68

Al(P=0-62k bar) 1.18-0.075

AUlmplants of O^.He.H,

D and Al)

'

A1(A1 implant, )(1500A) lOK 2.6 Max.

Al (350A) 3.46

Al (380-1400A) 1.42-2.37 (T jv-to

grain size)

Al (lOOOA; deposited 4.2K) 1.3

Al (70-450A) 2.83-2.67

Al (SiOg coating) 2.83-3.7

Al (RRR O.2000) 1.180; 1.175

Al (Ar) (350A plus) 4.2-3.1

'^^ 0. 04-0. 14'^"0. 96-0. 86 0.008-0.385

AlAupLa

AlAUgSc 4.40

AlAugY

"o (oersted)

'^^O. 8^-0.0. 1^^0.2N''3

AlQ_^Bei_Q (Quenched < 6. 6K; 125-255A)

AIq gBSg 7(Quenched <2K)

'^^'\'0.75'^'v-0.25^^"'P^^"*=^ 500-1 OOOA

Crystal tructure T„(K) Refs.

2070

2278#

2278#

2278#

2278#

HEX 2279#

2294

2064

2043

Al

19-18 (As cast) 19.4-18 (900C/14 days) 17-12-18 (Rapid quench)

8.8-6.0-5.6

Data given

4.2

CUB

82

B2

B2

A15

0.04

0.04

72015

^^201

5

^2230

^2270

^2160

^2199

V2199

^2387

^2230

2070

2006

2006

2006

2053

^2264

^2307

^2296

15
TABLE 2 (continued)

Material

^^0.8*^0-^.0. l'^^0.2^'^3

^^2'^^0.00526'-^0.994 (Re-entrant)

^^2^^0.0064'-^0.9936 (Re-entrant)

^''z'^^o-o.ooee'-^

'^^2*^^0.0066-0.009^^ (Re-entrant)

T,(K)

"o (oersted)

18.5-18 (As cast)

17-17. 5-16. 5(900C/14 days) 17-19.3-14 (Rapid quench

1.3(T^2 = O-'IS)

1.1(T^2 = 0-25)

3.3-^.1.5

-^1.5-0.2

HF

HF

Crystal Structure

A15

T,(K) Refs.

2053

2098

2055

2332

2332

^^2*^^0-0. 906'-^0. 991

^^*'^0.018'-^2.982

^^^V0.017'-^3-2.983

'^^^V0.015'^'=3 Alg ^Dq ^(lOOOA;

deposited 4.2K)

6-0.8

Data given

5.7

HF

A15

0.3

0.02

2055

2333

2333#

2322

''21 60

A1'^V0.06^b3

^^0.24^^0. 05*^-0. 05^ '^0.69

Tc

/T. 1-0.95

18.35 (As cast) 19.4 (700C/3 weeks)

20.0 (700C/4 weeks)

A15

A15

2322

2305

^'ll-o'^Vl'^^l-of^^S 20.4-6.1

'^^O. 05-0. 29''^0.C5-0. 2^*^0.67-0.85 9. 8-1

9

'^^O. 175^^0. 075'^''^0.75 ^^.O

A^O. 15^.05^^80 ".8

^^0.285^^0. 05'^ '^O. 665 Al,QGaQ_iNb2( co-sputtered) 16-14.5

^^0.1-0.85^^9-0.15^3 12.9-10

'^•l0-0.08'^^0.2-0.12V3 15-14.1 AK„ .Ga„ tV 1.60-1.64

lU. 3 U.I Alg gGaQ ^V 1.5-1.8

Alg gGaQ ..V (No anneal)

A1-]Q gGa„ ,V (No anneal)

^l^Vo. 009^^3-2. 991 ^-°-^

^l2^''0.0038'-^0.996 1-^28

A15

HF

5,.NbjGa 3'^\

A15, D8b A15

D8,

A15

A15

4.2

1.3

1.3

2305

2004

2004

2004

2004

^2067

^2069

2010

2363

2363

2363

2363

2333

2057

16
TABLE 2 (continued)

Material T,(K) (oersted)

Al^Q ^gGe^Q 2^^{lmp]ar]t, 500-lOOOA) 7.35, 6.2

'^^i-o'^^o-i'^^s

'^^l-0.9l'^^0-0.09^^

'^^0.8'^^0.2'^''3

A1o.8'5^0.2'^''3

I^^O.e^^OA^^Z

'^lo.75^^0.25'^''3 (Sputter

deposited)

'^^0.8l'^^0.29"'^4.15(SP""^>^

deposited, 200C)

'^^0.84'^^0.16N''2.52(5P""^'"

deposited)

AlGeNb3

'^^O. 2-0. 9'^^0. 8-0.1"^^ (Co-sputtered)

'^^0.9-0.l''^0.1-0.9^3

^^0.1-0.85''^0. 9-0. 15^3

A1H^2(^"'P''3"*' 10K;1650A)

AIq 7Hq_3 (lOOOA;

deposited 4.2K)

A1(H2)(350A of Al)

Al (He) (Imp! ant)

'^^"^O-0. 12^*^3-2. 88 Al(In)(280A,185A)

^^0-0. 44^'°0-0. 40*^^0.91-0. 54

18.7-20-12 (Rapid

quench) 18.7-20-6.5 (As cast, annealed)

18.6-20-19.7

19.7 (lOOOK/nO hrs.)

18.5 (Arc melted

powder)

16.8 Max.(750C/

lhr-20days)

18.5 Max.(750C/

1 day) 15.9 Max.(1240C/

2 hr; 750/20 days) 16.5 Max. (Same,

deposited 485C)

18.5-7.9 (Various

treatments) 14.7-15.5 (1240C/4 hr; 750C/20 days)

16.9-17.2 (750C/5 days)

19.8 (Powder prep.)

13-16.5-15.5

12.5 Max.

4.5-9.7-11.2

6.75 Max.

5.95

4.8-4.2

3.7 Max.

18.6-15.2

2.282, 3.178

16.84- <

2

Crystal Structure T„(K) Refs.

^2296

2268, 2258

A15 2323, 2019

2130#

2130#

A15 2113, 2180

A15

A15

A15

A15

A15

A15

A15

2113

HF

2113

2113

2133

2259

^2067

2157

^2069

^2015

^2160

^2230

^2015

2323

^2211

2003

17
TABLE 2 (continued)

Material T^(K)

'^^0.20^''0.025^''0.77 14.56

Al2La 3.273

Al2La 3.3

'^^-0.92^90.0.08 T^(-0.08+0.11)

^^0.2-0.08^90.8-0.2'(50-lOOOA) M- <0.32

(oerSted)

AIq .,MgQ g(50-1000A)

Al Mo (Implant)

X A1f^°0-0.30^V2.70

^^0-0.6"°6.35^8^"l.2

'^^O-O. 03%. 05-0. 05''"^0. 95-0.92 '^^0-0.03%.05'^i0.95(«' P*^"^)

'^0-0.06%.25Tio.75^^ P*^^^^)

^^0-0. 03%. r^. 9^*^^ phases)

'^^O. 15-0. SO'^^O. 85-0. 70

^^0.235-0. 29^^^0.765-0. 71

'^^0-0.07'^''l-0.93

^^0.1-0.42^*^0.9-0.58

'^^0-0.15^h-0.85

AlNb,

AlNb,

AlNbg

'^^0.2l'^'^0.79

'^^ 0.22^*^0. 78 AlNbo

HF

18.6-12.3

11.8-14.3 HF

3.197-2.7

1-3.1-2.7

3.8-2.1

3.45-3.2

15-18.8-10

17.0-11.7 (Liquid quenched)

17.5-19-18.4

8.7-10-17.5-13-<4.2

9.03-5.15 (Cast) 8.8-8.1-10 (1750C/25 Hr) HF

18.5

17.43 (As cast) 18.53 (Annealed)

:i7.5 HF

16.84

'>.15

0.74 HF

Crystal Structure T„(K) Refs.

2003

2057

2332

2311

^2192

Not

Superconductive ^2192

1.2 2382

A15 2323

2408, 2089

2340#

2152

2152

2152

2245, 2166

A15 2150

B2 2002

2002

82

A15

A15

A15

A15

D8^

2049

2272#,

2180,

2131, 2258

2075

2193

2003

2002

2170, 2193

2002

1810

18
TABLE 2 (continued)

Material

Al

0. 45-0. 40'^'^0. 55-0. 60 Al3Nb

AlNb^CSputter deposit)

AlNb2 23(Sputter deposit)

'^Vo. 15-0. 3^ ''0.85-0.

7

(Co-sputtered)

AlNb2(Neutron irradiated)

AlNb3NiQ_o_o5

'^^0.85-0.l'*"'3^0. 15-0.9 (Sputtered)

^^1-0.90"''^V0.10

Al 0.04-0. 10^ ''^^2

'^^'^'^sSio-^O.l

'^^1-0.93'*"'^ ^0-0. 07

T,W

0.64

15.2-17.5

(1 hr-20 days/750C)

15.1-15.9

(750C/5 days)

12.5-^17

18.6- < 1.4

i=r- = 1-1.04-0.85

CO

11.5-6.5-5

18.6-17.5

5.4-1.1

17-19. 1-17. 5(As cast)

19.1-18.8-19(9000/14 days) 16-15-15. 5(Rapid Quench)

15-13. 5-12. 5(Rapid Quench)

18.6-18.4

"0

(oersted)

HF

'^^0.255^'^0. 73^ ^'0.015 -v-ie (Liquid Quench) 18.4 (750C/162 hrs)

Al^_QNb3SiQ_i (Co-sputtered) 16-14-6

^^0-0.l'^''3^"l-0.9 17.8-18.0-17.9 HF

Al^Nb3Sn^.^ -^16.

6

HF

'^l'^^3-2.64'^V0.36 18.6-14.5

'^^'*"'3-2.58''"^0-0.42 18.6-9

^^0-0.025^*^0.33^^0.66 9.1-8.2 HF

^^^V0.55V0.45 18.6-14

'^^'^'^3-2.85*^0-0.15 18.6-15.3

'^^'^''3-0. 85^^0.15 18.6-15.7

A1(0)( Implant, 10K,1300A) 4.0 Max.

Crystal Structure T,(K) Refs.

D8, 1.3 1810

DO22 2170, 2002

A15 2113

2113

A15

A15

A15

A15

HEX

A15

A15

A15

A15

A15

A15

A15

A15

'2067

2216,

2285,

2190, 2019

2322

'2067

2323

2210

2053

2323

2179

^2067

2374

2108

2323

2323

2262

2323

2323

2323

^2015

19
TABLE 2 (continued)

Material

Aim 'V

10. D

AI^qV

AlyV

Al.V-, AUV

5 I J AIq 25VQ 7c(Liquid quench and various treatments

^^0-0.265^1-0.735

^^0.21-0. 32'^0. 79-0. 68 (Co-sputtered at 530C)

AlV^3(Sputtered, 600-850C,

3500-1 2, 200A in Ar, ,Ne Kr and Xe)

AlV^^^t^Posit 800C, in argon,

11,450A)

Mo o'^ 1 o

^^0.99,0.96''^0.01,0.04

^^0.04''^0.15"'"^0.81 AsGeTe

^^0.39''^0.01^^0.60

^^0. 04''^0. 15''"^0. 81 (A"iO'"Phous)

^^0.0l''^0.49''"^0.50

^^0.005''^0.005"''^0.99

ASoLa^

ASq_q_3Mo^_q ^(Iniplant)

AsNbj

^0.05'''^0.95 As2Te3(P=100 k bar, ".4000A)

T,(K) (oersted)

Al^Q

75^''o 25^^"^P''^"^'^'^°"''°°°^^ 4-8.35

^^0.1-0.85-^0.9-0.15^3

Al-^V

n. 5-12-10.

5

;;.1.5

1.61-1.77(Annealed)

Crystal Structure T,(K) Refs

^2296

AT 5 ^2069

2363

1.3 (Unannealed) 2363

1.7-1.6 0.99-1.06

0.36,0.99

5. 43- < 0.5

8.8-9.7- <2.5.11.7

11.8 -<1.1

11.8-11.2

HF CUB

A15

0.90-0.88

0.43(7500/1 hr)

HF RHOMB

0.65 7.7-<2

'\-0.31

4.4

HF

CUB

TET

1.3

<4.2

2363

2363

2363

2245

2320

"^2069

"^2025

'2025

2 2359#

0.38 2330

2330

2330

0.4 2330

0.05 2330

0.4 2330

0.4 2330

2338

2382

2237#

0.38 2330

"2232

20
TABLE 2 (continued)

"o Material T^(K) (oersted)

Au

AUq 2CUq gGeQ ^(Deposit 12K, 3700A) 2.80- < 1.1

'^'^0.15''"0. 10^^0.75 ^^^'^ (Liquid quench)

Au^_Q 9QGaQ_Q

iQ 0.008-0.250

%.97-0.90'^^0.03-0.10 0.0078-0.264

AUpGaLa

A"2^^c

Au2GaY

'^"o.20^Vo.007''-^0.80-0..793 3.6- < 1 (Amorphous)

^"0.975^^0.025 0.0141 %. 057^0. 7-0. 75''^

%.94-0.90^"0. 06-0..10 0.0114-0.0625

AUpInLa

AupInSc 3.02

Au2lnY 1.90

%.24'-^0.76(Li quid quench) 3.3 (Amorphous) 4.05 (Crystalline)

'^V22'-30.78('-i quid quench) 3.934 (Amorphous)

AuLu 0.37 %. 24-0. 34%.

(Implant)

76-0,,66 2-2.7

AuNbg 10.5- -^9 %. 24^^*^0.76 10.56

^^^.Q^h.Z-i^Ki1-1 8.2-9.3-8.7 (Splat

quenched) 9.2-10.1-8.2 (As cast) 10.7-11.5-6.7-6.3

(Annealed)

A^l-O^Wl 8.4-9.4-5.7 (Splat

quenched) 8.7-10.3-5.5 (As cast) 7.7-8.2-5 (Annealed)

HF

Crystal Structure T,(K) Refs.

2070

2263

2241

2401#

2070

B2 0.04 2006

82 0.04 2006

B2 0.04 2006

2173

2147

1.4 2325

2070

B2 0.04 2006

B2 2006

82 2006

2023

2241

2006

2382

A15 2157

A15 2132#

A15 2076

A15 2076

21
TABLE 2 (continued)

Material T,(K)

Au^Sb, (Deposited 4.2K)

X 1 ~A

3.1 Max.

AuSc 2.00

'^^0. 96-0. 95^"0. 04-0. 05 0.0184-0.047

AuTi3

^^0.24^.76 2.97 (llOOC.

H (oersted)

AuV.

AuV,

AuV.

AuY

2.65 tl.O

^^Q.80^"0.20 0.102

^'^0.82^"0.18 0.093

AuZn(P=0-23 K bar) 0.4-1.3-1.25

B(e)

B(P=0-100 K bar)

(^300-600'^^ °' ^^ °' 2i?)

^^'".,0.852^2. 15 6.4

B^ErRh^ 8.7(Magnetic <0.,9K)

^0.072^0.55-0.75''^ <1.4-3.5

^0.105-0.258^0.7-0.4'''^ < 1.4-1.5

B2lrMo2 3.60-3.45

¥'-1.2^1.8 1.25

B2lrV2 1.12

B^LuRh^ 11.76-11.54

^4^^0.75'^^'^^0.25 11.93-11.3

^2"°1. 5*^^1.5 3.72-3.60

^2^°1. 75^^1.25 3.70-3.48

B0.5"°5^6^" 12.3

^0.047^0. 950^^0. 949°0. 003 14.0

BNb

B^NdRh^ 5.36-5.26

B,Os 2.1-1.98

Crystal Structure T,(K) Refs.

"^2072

B2 2006

2070

0.015 2035#

2132#

A15 1999#

A15 1999#

A2 0.03 1999#

82 0.04 2006

2147

2147

B2 2006

2 2359#

CUB (a=23.32A) 0.04 2191

CUB 2111

TET 2120

2316

2325

2325

ORTHO 2041

ORTHO 2041

ORTHO 2041

TET 2316

TET 2316

2041

ORTHO 2041

2161

Bl 2036

ORTHO 1.1 2041

TET

ORTHO

2316

2041

22
TABLE 2 (continued)

Material

B3Re7

B^Rh^SCg 75^''0,,25 B^Rh^Sm

B^Rh^Th

B^Rh^Tm

B^Rh^Y

B2RU

B^ ^Ru

B3RU7

B2RUMO2

B2Ru,_5W^

.5 B2Ru^ 25^'1.75 B2RUW2

^66^

^61.7^

^^0.9^^.25'^0.1°3''^0.75

BaBiOj

^^^^'0.05-0.3°3''''0.95-0.7

^^^io.203P'^0.8

Be (Deposited low temp.,

60A)

Be (Deposited low temp.,

20-175A)

Be, _QBiQ_i (Quench cond. <5.6K, 180-700A)

BeiQ goGa (Quench cond. <5.2K, 250-620A)

^^l-0.68'-^-0.32(Q"^"<=^ ""^•

<6.1K, 260-41 OA)

Bei_„PbQ(Quench cond. <6.2K, 110, 450A)

^^0.03lVo.969('^'^R=9.7)

Bi(III, IV, V)

Bi (Deposited <2K, 650-35A)

T,(K)

3.08-2.95

8.74-8.49

2.51-2.45

4.34-4.29

9.86-9.73

11.34-11.26

1.60-1.57

3.38-3.32

2.57-2.48

3.28-2.83

3.38-3.18

3.42-3.32

n. 73-11. 32(P=0-14 kbar)

"0

(oersted)

^.9- vl3

'v.n

8.6

6.3-8.6-5.,1

9.0-4.1-6.,1

8.7-6.4-8..4

Crystal Structure T„(K) Refs.

HEX 2041

2316

TET 2316

TET 2316

TET 2316

TET 2316

ORTHO 2041

HEX 1.1 2041

HEX 2041

2041

2041

ORTHO 2041

2041

2 2359#

2 2359#

2149

ORTHO 4.2 2056

2056

2056

.8-1.7

9.0-5.2-7.2

4.86

6.8-7.2-7.1, 7.3-6.3

(P=30-38-47, 48-80 kbar)

6-2.6

'2013

^2013

^2264

'2264

'^2264

''2264

2242#

2328

^2307

23
irsted)

Crystal Structure T,(K) Refs

^264

^2073

CUB 2159

HF 2243

284.1 2240

TABLE 2 (continued)

Material T^(K)

Bi^_QGaQ_^(Deposited < 7.3K, 6.1-3.4

580-340A)

^''O. 01^3. 75"^'^0. 985

^•''

Bio_22lno.78 ^•"' 5. 61

^^0.006^"0.994^^^^=^°' ^-'^^^^

18 micron spheres)

Big QQ4lnQ ggg(RRR=14.6, 3.4396 280.4 2240

18 micron spheres)

BiQ_QQ^gInQ_ggg^(RRR=28.2, 3.4051 277.9 2240

18 micron spheres)

BiQ_Q o5^"l-0 gs^Change Type I 3.4-4.27 HF 2102

to ii)

Si0-0.05^"l-0.95 »^ 2355

Bi^La^ 0.155 ' CUB ' 2338

Bi2La^Pb 2.3 CUB 2338

BiLa^Pbg 2.4 CUB 2338

Bi^ 5La/|Sb^

g 0.158 CUB 2338

Bio-0. 5^^-0.5 7.3-7.8-8-9 2012

BiQ_Q aPb^.Q 7 7.2-8.65-7.9 HF 2110

^^0.1-0.35p''0.9-0.65^"-20°°'^) 7.65-8.95 ^2228

BiQ_.|Pb^_Q(Deposited<6.1K, 7.2-7.8,6.85-7.0-6.15 ^2264

800, 600A)

^^0.05, 0.2^^0.9,0.6^^0.05,0.2 7. 20, 7.26 ^2228

(2000A)

Bi^_Q 4SbQ_Q g(Deposited ^3K, 6-3 ^2051

<30C)0A)

^''0.97-0.8^''0.03-0.2 7.2-6.3 (P=30-80 kbar) 2328 (ir. III, IV, V, VI)

BiQ ggSbg 2o(P=35-46, 49-63, 6.3-6.4-6.2, 5.4-5.7, 2328

69-80 kbar) 5.7-5.3

Big Q22Sno gygtWhiskers) 1^1(0. 20) (At ].5% strain) 2235

Bi,Te,(p=2xl0^^) 1.5 2085

24
TABLE 2 (continued)

Material

Bi2Te3{p=2x10^^)

Bi2Te3(n=9x10^^)

Bi2Te3(p=1.5xlO^^)

, Bi,TeJn=2x10^^)

I ^

^

I' Big ,nQ_g(^2000A)

''1.3-1.6'-^

C, Mo(Eta phase)

! TM°0. 05-0. SS'^^O. 95-0. 15

'^0.5-2"°5^6

CNNb (wires)

{C+N)o_i_gNb

^0.14-0.27^0.44-0.74'^''

''0. 31 8^0. 662'^^0. 996^0. 001

S-O.OOS'*'-. 921 -0.807^ '^0.984-0.

T,(K)

"o (oersted)

Crystal Structure T,(K)

1.7-2.75-2.1 (I)(P=60-65-70 kbar)

'\-3 (IV)(P=80-100 kbar)

1.5-2.65-2.3 (I)(P=68-75-88 kbar) 2.7-2.9 (IV)(P=88-100 kbar)

1.5-3 (I)(P=64-76 kbar) 4.3-3.9 (II)(P=71-85 kbar) 2.85 (IV)(P=80-100 kbar)

1.5-2.2-1.75 (I)(P=75-80-90 kbar) 2.2-2.4 (IV)(P=88-100 kbar)

2.30

0.25-0.32

11.1 HF

9.0

11 1 8-8 62 12.1-13.45-11.67 (1500C/30 min. at

120 kbar)

4.14-3.5

7.2- < 5-15-7

Data given

16.4 (Considers vacancies)

924°0-0. 23-0. 094 13.3-12.2 (Considers vacancies)

^0. 03-0. 98^^^ 95-0^*^0-0. 01 Vo. 01 S. 002-0. 97'^0. 937-0. 004^^

^0.89plus^''(^'"P^^"^)

^0.89^^

CNb(Fine powder)

^0.03'^''0. 56*^0. 41

^0.03'^'^0. 43^^0.54

^0. 98^^

^1.55''"^0. 3^0.7

%.88plus'^(^'"Pl^"*)

S.66^'^0.34

S.365^''0.635

^0.39-0. 495^'"0. 61-0. 505

5.7-16.4 (Considers vacancies)

7.73-10.8 (Some pressure data)

3.7-11.3-4

3.7

10.3 (1150C/24 hrs.)

6.3-10

9.46

17.1 HF

3.2

1.35, 0.93, 0.8

4 0.75

Data given

Bl

Data given

Data given

Bl

Bl

Bl

CUB

Bl

CUB

Bl

Bl 0.3

Refs.

2085

2085

2085

2085

^2228

2119

2219#

2094

2094

2161

2078

^2321

2310

2036

2036

2036

2144

2382

2382

2283

2024

1997

2144

2188

2382

2082

2082

2082

25
TABLE 2 (continued)

Material "o

T^(K) (oersted)

Crystal Structure T„(K) Refs

''O.m ^''0.889 0.3 2082

Ca MoSp

A C 4.0 HF 2273

Cd(99.9999) 0.503 (Single crystal) 2251

Cd(99.999) 0.52 2236

Cd(whiskers, 4 orien tations) 0.506-0.484 (Also at 2236

^^0. 945^^0. 055""0-0. 004

(Quench cond.)

^'^l-0.999%-0.001

(Quench cond.

)

CdMng-ZO ppm atomic

^'^0.002^^0.998^"'^^^'^^''^

Ce(RRR=%80)

Ce

"^^O.l'^3.75^'^0.9

0.7% strain, also at 3xl08N/m2)

1.15-<0.070

0.9-0.5

0.5- <0.02

T^(0.20)(At 0.5% strain)

0.02fl-0.045(P=20-35 kbar)

1.9-1.3(P=45-125 kbar)

^^0.01 ^3.

75''" '^0.99 5.6

^0-0.025^"l-0.975 4.4- < 1.3

''^0.008'-^0.992 4.84

''^0-0. 01 7'-^l -0.983

4.61-2.37

^^0.2'-^0.8'^°6^^8 8.9 HF

^^0-0. 01^^1-0. 99^*^3.0 4.18-<1.5

^^0-0.. l'-^l-0.9^"3.0 6.45- < 1.5

'^^O. 0075^^0. SO'^^.ZO^'^^-^"^''^"^) 5.25- <0.045 HF

^^0.0075'-^0. 80^^^0.20 '^^1.3 (Magnetic at <0.045K)

HF

*'^0.004'-^0. 80^^^0.20 3.6 HF

^V0.0077'-^0. 90^*^0. 10 5.41-3.03

^^0-0. OOe'-^O. 75^*^0. 25 4.82-1.45

'^^0.004'-^0.55''''^0.45 3.85-1.45

^VO. 003^-^0. 35'''^0. 65 2.48-1.26

CSfi.n nnccLaf, ol'^n on 1.83-1.00

'2392

'2392

2134

2235

A1 2362

2362

CUB 1.8 2159

CUB 2159

2213

Data given 2400#

Data given 2400#

RHO^B 2196

2212

2212

2297

CUB 2167

CUB 2167

CUB 2167

2400#

2400#

2400#

2400#

2400#

26
TABLE 2 (continued)

Material

Ce2M0gSg

CeMOgSg

''^0-0. Oe^'^l -0.94

'^^1-0.6''V0.4'^"2 CeRUo

CeRu^

^^0-0.10^^0. 2^*^0.8

^^0-0.09^^1-0.91

^^0, 007^*^0. 993

^^0-0.04^'^0.8^0.2

^®0-0.015^'^0.65^0.35

^^0-0.002^^0.44^0.56 ^VO. 105^^0. g^'^o.i

%.075'^'^^^2

'^V0.09'^''^^2 ^Vo-oyf^^"

%-0. 059'^^! -0.941

^°0-0.02^''l-0.98

Cr (Evap. films on carbon)

Cs2M0gSc

Tc(K)

6.7-<1.3

6.20-6.55- < 1.5

6.28

6.20

1.75-0.07

1.36-0.05

1.09

1.65-0.07

1.45-0.06

0.65-0.

n

1.93-0.2

4.5

7-1-4.2- <1

^*^/Tco =1-0.98

7.85-5.98

^'O-S'^^h-Q 13.5-5.5

^V0.09^h-0.9l("^^

fractions)

ight 9.2-5.4-9.4

Cr^NbgSn T^(-l. 6-0.9)

^Vo. 044^*^1-0. 956 7.85-6.60

^Vo. 04^^-0. 96

^^0.1^0.1^2.9'^ 4.87-4.94

Cs„ ,MoS, 6.9

H (oersted)

HF

HF

HF

HF

HF

Crystal Structure T„(K)

0.6

HEX 1.1

015

CI 5

015

HEX

A15

A15

A15

HEX

0.5

0.6

0. 86-0. ai'^^O. 14-0. 19 0.0074-0.048

Refs.

2360

2161

2050

2213

2292#

2096

2292#

2334

2334

2400#

2334

2334

2334

2334

2225

2210

2322

2337

2256

^2205

2011

2052

2052

2337

2256

2046

2273

2161

2070

2070

27
TABLE 2 (continued)

Material

"o

Tj.(K) (oersted)

Crystal Structure T,(K) Refs

^"0.036'^^0. 25^^0.71 6-8 (Liquid quenched) 2245

quenched)

4.2 2245

^"0.90''^0.10 0.0177 CUB 2147

Cuq 3_g 7Ge(Implant, '\.2500A) 1.8-3.2-1.9 ^2365

CUq 26''^0 74*^"" (Imp1ant,'\'2500A) 1.4-3.3 '2365

^"0. 158-0.359^0.85-0.55''^ <1.4-6.3 2325

CUn noiiin cc n QcPo 3-8.7 2325

Cu Kr Te-, (Implant) (Quench

X y I -X condensed)

CuLu

'-'^O.l'^^O-0. 003^*^0. 9-0. 897 (Deposited <3K, '\^500A)

Cu^ 7Mo3S4(P=0-22 kbar)

Cu^ 2^°3^4(P=0-22 kbar)

Cu2M0gS3

CuMo S

CuQ_7M03Se^

Cu^_3M03Se^

'^'^0. 40-0. Se'^^O. 35-0. 19^0.25 (Deposited 900C,

3000-10, OOOA)

*^^0-0.03'^''0.33''^''0.66

''"0.97-0. 84^*^0. 03-0. 16 (Weight Fraction)

CuRh2S,

CuRh2Se4

''"0.2-0.8^^0.8-0.2 (Deposited 4.2K, 600-1 700A)

CuSc

6.5- <0.3

4.5-6.2-7

10.6-11.5-10.4

10.9-10.5, 6.5-5.8,

4.6-4.1

10.4 HF

10.6, 10.4 HF

5.8, 5.9 HF

4.6

17.5-18.1

9.3-8.8-9.2

7.2-0.3

3.81, 4.70, 4.76,

4.7-5.8, 3.8-4.4

(P=0-22 kbar)

3.38-3.7(P=0-22 kbar)

1.5-2.5-1.4

HF

B2

0.37

0.04

RHOMB

RHOMB

RHOMB

HI1

Hln

82 0.04

'2365

2006

^2364

2128

2128

2128

2408

2408

2408

2287

2408

^2265

2262

2157

2148

2148

^2072

2006

28
TABLE 2 (continued)

Material

%. 905^^ 0.095

^"0.90^^0.10

Cu^gSi^

%.38^^0.62^^(^'"P^^"*'

quench cond.

)

%. 103-0. 182^"0. 90-0. 82 (590-1700A)

CuY Vl"fV2

Do-lHfVg

D0.5"fV2

'^0.97-0.72*''^

^0.87-0.91^^

°x''^l-0.85'^^0-0.15(^'^P''^"^'

DisTh,

DisTh^

Dy^LaSng

Dy2MOgS3

Dy^_2"°6^eg

Er^LaSn3

ErgMOgSg

Er^_ 2^06^68 ^VO. 007^^1-0. 993 ^VO. 01 2'-^l -0.987

^"0.2'-30.8^V^8

EuMOgSg

^"0.67^V8^"0.33

^"0.33"°6^8^"q.67

-"0. 1 -0.S'^°6. 35V"l. 1-0.24 E"l.2"V^8

EuSm Sn_

T,(K)

0.0129

0.0206

1.02

6.29-6.57

0.47

9.7-3.4

9.7-3.3

5.8

8.2-1.3

3.8-3.5-5.4

10-3.5

8.42

8.00

7.9

T-(-)

2.1

5.77-5.30

T'(-)

2.19

6.17-5.70, 1.9

5.12-3.5

4.7- <0.6 (Ferromagnetic <'\^0.8K) 10.7-11.4

13.0

10.6

11.5

t;(-)

"o (oersted)

HF

HF

HF

Crystal Structure T,(K) Refs

CUB 2147

CUB 2147

CUB 1.5 2155

82

C15

C15

CUB

HF

HEX

HEX

HEX

RHOMB

RHOMB

RHOMB

RHOMB

HEX

1.1

1.1

'2365

^2077

2006

2122

2339

2339

2229

2324#

2347

2155

2239#

2353

2297

2161

2050

2297

2161

2050

2127

2168

2196

2008

2008

2121

2008

2408

2050

2297

29
TABLE 2 (continued)

Material

''Vo. 3^^2-1.

7

•"^O-O. OZ'^'^O. 72-0. 8l''*0.28-0. 19

''^O-O.OS'^'^O. 76^*0. 24-0. 19

•"^O-0. 04'*"'0. 76''^0. 24-0. 1

9

''^0-0.0125^^5^2

''^0.05'^^5^2

''^0.034'^''35"

''^0.017"''35"

''^0-0.07'^''35"

•"^o.osV^o.gs

''®0-0.1052^^

''^O-0. 065^^3

•"VO. 037^^1 -0.963

•'^0.025^^0.975

13.5-2

5

9.5

9.3-5

8.56- <0.5

8. 56-1. 80( Disordered)

10.10-1.40(0rdered)

7-<l

17

17.5

^'^/Tco=l -0.96-0. 91

3.2-2.7

0.8-3.3- <1.3

^VTco=1-0.88

7.85-4.9

3.15-3.65

"0

(oersted)

HF

HF

FBq QgUg(Neutron

irradiation)

•'^0.3^1.72'^

''^0-0.3^2-1.7^'"

Ga (Alpha)

Ga (Deposited <2K, 400-35A)

Gag ,GeiQNb2( Co-sputtered)

^"^0.015^0.985

^^0. 05-0. 345^''0. 02-0. 15'*"'0. 625-0. 835 l^'^^-^

S^Vo.625-0.80

•^^""0-1.2^3-1.8

<5^0.5'^V65"

Gag 5MO5S Sf)(P=0-100 kbar)

3.92- < 2. 08

4.4

8.8-4.2

8.3-4.2

16-13-14.5

13.5-2

13.5-4

HF

HF

HF

HF

HF

HF

HF

58.3

Crystal Structure

A15

C14

014

CUB

HEX

A15

A15

A15

A15

T„(K)

C15

A15

A15

M.5

4.2

HF

HF

Refs.

2011

2081

2081

2081

2398

2398

2398

2210

2042

2322

2322

2322

2042

2225

2322

2337

2256

2300

2081

2081

2022

^2307

^2067

2254

2158

2158

2011

2089

2317

30
TABLE 2 (continued)

Material

^^o.sMos^eS"

GaNbo

^^0. 20-0. 25'^''0. 80-0. 75

GaNb^

GaNb2( Neutron

irradiation

^^0. 16-0. 35'*^0. 84-0. 65

GaNb

GaNb3

Ga^Nb5(With Irg 005)

^^0. 08-0. 35'^''0. 92-0. 65 (Deposited 50C-750C)

T,(K)

14.2

20.7

7-20.7(650C/l mon.)

7-18(Argon quenched)

16.0

"0 (oersted)

10.4-15.9-14. l(As cast)

6.0-14.8-7.8(Liquid

quenched)

17.3 from 16.3(Laser

beam quenched)

16.8

17.3-5

Ko. 23-0. 35'*"'0. 77-0. 65 (Sputtered)

^.13-0,16-15

''^0.85-0.l'^''3''0.15-0.9 12-5.5(Co-sputtered)

Ga-j .gNboSi g_ , ( Co-sputtered) 13.5-6

^^0. 01 -0. 04'*"'0. 73-0. 82^"0. 26-0. 1

17.8-18.1-18.0

6aQ_^Pb^_Q(Deposited < 7K, 7.2-6.8-8.4

750-575A)

*^^0. 40*^^0. 60

2.8

^^0.028'^®0.972 3.02

^^0.205''®0.795 2.655

^^0.20*^^0. 80 2.7

^^0.16'^®0.84 2.9

''^'V'0. 05*^^0. 95 2.9

^^0.5S"0.5V3 5.6

GaVg 14.3

GaVj 14.02-14.82

GaV3 15.1

GaVj 13.8, 13.5

GaV, 15.85, 13.6

HF

Crystal Structure T„(K) Refs

Data given 2307

A15 2125

2125

2166

A15 2158

2180

2295

A15

A15

A15

HEX

HEX

HEX

HEX

HEX

HEX

4.2

A15

2190

2245

2106

2299

2158

^2370

^2067

^2067

^2067

2374

^2264

2207

2207

2207

2207

2207

2207

2272#

2272#

2254

2138#

2138#

2125

31
T,(K)

»o (oersted)

Crystal Structure T,(K) Refs

15.7-14.3(0rder from

0.95-0.84)

HF

A15 2343

2381

9.53-15.26-5.61

(1400C/4 hrs.) A15 2280

13.25-14.56-9.69

(Above plus 1150C/

7 hrs.)

A15 2280

TABLE 2 (continued)

Material

'"^0.248^0.752

GaV2( Irradiation)

''^0.205-0.318^0.795-0.682

''^0.219-0.282^0.781-0.718

Ga^ ,. n ^fi^n or n ca 8. 0-14.8-7. 0(As cast) 2245 0.15-0.36 0.85-0.64

< 4.2-:< 13.9- < 4.2 (Liquid

quench)

^-0.12^1-0.88 5.1-1.6 CUB 2266

f^^Vo. 972^0. 03 2254

'^^0.005^^1-0.995^^3.0 4.18-^.2 2212

Gd LaSn, T' (-) 2297

X 3 C S-0.055L^1-0.945S"3 6-^3' 6-39-4.79 2358

'^^0.01-0.055L^0.99-0.945S"3 T'(-0.015, -0.075, -0.21) 2358

(P=0-18, 19 kbar)

GdQ ^Mog 35PbQ gSg 4.9 HF RHOMB 2408

GdQ gMOg j^Pbp ^Sg 3.0 HF RHOMB 2408

'^V0.6'^°6. 35^^1-0. 4^8 ^2-14-2.8 RHOMB 2408

Gd2M0gSg 2.2 2161 S-0.5%.35V"l. 2-0.6 10.3-12.5-6.7 RHOMB 2408

Gdg gMOg ggSgSng

g 6.7 HF RHOMB 2408

Gd^ 2'^°6^^8 5.59-5.24 HEX 2050

Gd^ 2^0^^% 5.6 RHOMB 2287

'^^0.00125-0.09^^.999-0.91 ^c ("^-^^ 2, 1.3) ^2233

(Implant, 400A)

Gdn_n ocJ^Kn .Sn„ ,_„ „ 18-16.5-18-15, "^2265 '0-0.25"'''\.0.5-'"0.5-0.25

(Deposited 900C, 3000-10, OOOA) 16-14.5

''^0-0. 11 "^"2^^-0.89 3.3-3.4-2.3 2288

Gdo.oOlsTh (^-9 • 85 2336 G^%.09-0.39^'=2. 91-2.61 18-12-13-11 ^2282

(Deposited 700-900C)

GeNbg g(Deposited 720C, '^.2000A) 23.2-21.9 A15 ^2214

32
TABLE 2 (continued)

Material

GeNb2( Deposited 'v975C, MOOOA)

T,(K)

23.0-20.85

"o (oersted)

GeNbg

52-1 95(Deposited 720-800C, 9.6-23.2-12.8-19.6

2000-350C)A)

r^ MK n Qo(50-4000A) a,9-22 •^^o.i-o.u^^^o.g-o-^^

''^0.16-0.3^^0.84-0.7

(On Nb3lr films)

GeNb2(Co-sputtered films)

GeNboC'Round Robin," Sputtered,

AI2O3, 'V930C)

GeNb2(Irradiated, helium ions)

(Neutrons)

GeNb,(Chem. vapor, deposition

750-900-lOOOC)

GeNb3(P of 70-90 kbar,

2000C, 15-30 sec.)

^^0.16-0.29^^^0. 84-0. 71

GeNb3( Laser heated)

GeNb3(Granular)

8-21.5-18.5

23- < 1.4

22,7-17.7

19.7-18.4

22-3.5

20.6- <1.5

(Recovers 900C)

21.7, 21.2

22.2-19.7

HF

5. 7-5. 9-5. 8-6. 0-5. 9(As cast) 5.3-5.7-6.1 (Liquid quenched)

17.3 from '^^14

10.3-7.5

Crystal Structure

A15

T„(K)

A15

A15

A15

A15

A15

A15

V

Refs.

12184

'2380

;2118

;2221 2117 2306

'2115 ,2180

^2284 2166

^2214

HF

V,

'2112

'2410

12395

,2309

,2060

;2067

;2017 ,2290

;2284

,2372

,2007

'2367

^2194

'2376

:2372

!;2044

"^2060

^2397

^2190

2341 2018

2397 2260#

2367

2315

2245

2106

2345

33
TABLE 2 (continued)

Material TJK)

GeNb,( Amorphous, RF sputtered) 3.342

Ge2Nb

GeNb,0 (Deposited 950-1050C) 20.5-19.5

Ge^_^Nb,0 (RRR=l.l-2.6) 21.5

GeNbO (Low oxygen) 10-13

GeNb3(02Cl) (Deposited 875-600C) 21,5

6eNb(Plus 0.05 0,C,N)(lmplant 15-21.6

2000-4000A)

GeNboO (Various Q^ Pressures) 15-21-20

'^^0.85-0.9^b3PQ^5.0_9 6-5-5.8-4.5

(Co-sputtered films)

Ge|_QNb2SiQ_i (Co-sputtered films) 16.5-12.5-11.5-6

^V0.02'^''0.33^''0.66

^^0.04,0.01^''0.96,0.99

^^0.45^^0.55

•"^0. 05^^0.95

^^0.01^^0.99

''^0.55^^0.45

^^0. 01^^0,99

^^0.001^^0.999

^®0. 20-0. 30^0.80-0. 70

GeV^, (Sputtered on hot surface, 'b2500-4000A)

8.9-8.2

"o (oersted)

HF

0.51 HF

0.40 HF

0.41(850C/2 hr. slow cool) HF

(Water quench)

5.8-6.1-6.0 6.0-6.5-5.4-5.9(Liquid quench)

7-6

GeV2(Irradiated, helium ions) 7-1.0

Crystal Structure

A15

T„(K)

2.5

RHOMB

Refs.

2241

2115

"^2368

^2153

2182

^2369

'^2060

2182

'^2067

^2067

2262

0.38 2330

2330

2330

2330

0.38 2330

0.45 2330

0.4,0.45 2330

2245

'2221

12372 ;2118

''2221

•^0-1.6^^^2 9.7-22 HF C15 2122 2339

"l5^^0. 048^*^3. 952 ^'^

"3.75^^0.0l'''^0.99 ^-^

"3. 7-3. o'-^O. 1 -0. 99^^0. 9-0. 01

"l5'-"0. 048^^3. 952 ^'^

"0. 51%. 1%. 765^^1 35 5.56-4.90

CUB

CUB

CUB

1.8

2155

2159

2159

2155

2257

34
TABLE 2 (continued)

% Crystal

Material T^(K) (oersted) Structure T (K) Refs.

"o-O.46"V0.l"V 765-0. 61^^0.1 5-0. 24 5.46- < 1.2 Data 2257 given

H2Nb 1.2 2156

Hq 3gNbQ 8Pdo_2 2.7^2.5 CUB 2071

»0-0.74'^V80P^0.20 1.52-<1. 3-4.07 2257

"0.12-0.75%.85-0.65%.15-0.35 ^-56- < 1-3 2257

"0.47N''0.72P^0.18%.] 3.99-2.54 2257

Hq ^pNbQ gRhg

2 5.96-5.64 B2 2071

Hq g^NbQ 8qRUq 20 5.52-5.36-5.21 CUB 2061

"0.35%.75%.25 4.97-4.78-4.64 2061

"0.21^^0. 67%. 33 ^2.0 2061

"o.nN'^0.80%.20 0-9 2061

H^Nb3Sn A15 2180

"x'^^.07P<^0.93 1-7 2347

HPd 9.62 HF 2349

^1-0 933"^^ 9.62-5.5 HF 2349

"0.99-0.82'''^ 7.3-1.3 2229

Hq 7g_^ g^Pd < 3.2-6.2 2080#

H'v.n ft? n rrP'' 1- 7-3-1 2034#

'^.0.82-0.88

1 .43-2.43(Calorimetric)

HgggPd 1.8 2033

Hq 225^^ 1-^ 2033

V.

v;v

„2198

^2348

"0.88-0.94P^('^2000A) 2-6.8 ^2350

H/dg gPtQ^dmplant) 9 2347

H/d^_Q_4PtQ og(Implant) 8.7-9- <1 ' 2347

\72-0.82Pd'^^.06 2.5-4.2 2304#

V'^l-0.85'^^^0-0.15(^'"Pl^"t) 5-2-5 2347

Hi^Pd^lh^ 1-8 203 J

H^PdTh 1.8 2033

HgPdTh2 1-8 2033

^^155^0.048-^^^3.952 '-" ''^ ''''

35
TABLE 2 (continued)

Material T^(K)

HTa

H,rTh. 8.5,7.97,7.9,7.5

1 4

H^jTh^ 8.8,7.5

^15 '^'4

H,Th

'^15'''^0.048'^3.952 ''^^

^3. 75'^'"0. 99^^0.01 ^'^

^3.7^'^0.95'^0.05

"15^4.84^^0.16 ^-^

M Th /r 4 9

'^^3. 75 '^'0.99 0.01 "7T4r2

'^3.5,3.0'''^0.9,0.5^'"0.1,0.5

Hf 0.128

Hfr, ..Nbp ,£- 6.5-7.5

0.65 0.35 6.5-6.4

"^0.063-0.657^4.94-0.34 9.76-9.81-6.18

9.3

(Weight fractions) 9.2-9.4

V(-0.8)

"4.25^4.74

"4-0.05^4-0. 95 Hf^NbjSn

"4.30^4.70

"^0-0. 07*^4-0. 93 HfVj

HfV2(Irradiated 6K, Fast neutrons) 9.22-8.8

"0 Tsted)

Crystal Structure T,(K) Refs.

1.2 2156

2156 2353? 2239#

2159

(Tv;o Modifications) 2155

1.8 2033

1.2 2033

2156

CUB 2155

CUB 2159

CUB 1.8 2159

CUB 2155

CUB 2159

1.2 2156

CUB 1.8 2159

1.2 2156

12.7 1996#

2286

2074#

HF 22221

2052

2052

A2 2404#

1.36-1.7 2334

9.7,9.3,8.4 HF C15 2312?

2081 2339 2005#

'0.15-0.64.85-0.4

C15 2285

9-9.3-8.4 HF 2005

"4. 0094. 991(^^^^=29.5) 5.34 2319=

Hf V Zr HF 2005 "^0.554^4.45 ""^

Hf V 7r 10 1 2005 0.5^2.3 0.5

36
TABLE 2 (continued)

Material T,{K) "o (oersted)

Crystal Structure TJK) Refs.

"^0.5^2^^0.5 10.1 HF 2005#

"^0.4-0.3^^'"0.6-0. 7 10.2 HF C15 2183

"^o-iV'-i-o 8.5-10.1-9.2 HF CI 5 2005

"^xVyZ'-l-x-y 10.,l-7.8 HF 2005

Hg( Deposited 2.3K,

>1 000-1 00-70A) 3.87-4.08-4.05 ^2090

Hg(64.5-92A) 4.07-4.05-4.5

(0 to 80K anneals) ^2090

Hg( 300-1 0,880A) 1^(^-0.2) HF ^2091

Hg(23A pores in asibestos) 3-5 2327

"90.007^"xTl T^(-0.14+0.22) 2101

"9x^"0.02'^' T^{0+0.12-0.01) 2101

"9x^"0.01^1 r (+0.5-0.1) 2101

"90.007^^1 T^(-0. 014+0. 14) 2101

"Sx^^O. 0008^1 T^(-0. 001-0-0. 012) 2101

"9x^1 1-x T^(-0.14) 2101 Hgjl T^(-0.014) Also P to 12 kbar 2101

Ho^LaSn^ t;(-) 2297

"°1.2"V^8 6.10-5.54 HEX 2050

In

In(RRR>16,000g 18 micron

spheres)

In(Particles, lOOA)

In(290-20,OOOA)

In(TypeI to Type II)

In (Multi layered films)

In (On PbTe, 15-340A)

In(In)(Implant at 2K)

In3La

^"0. 98-0. 874'^9o. 02-0. 126 InMng QQQ2( Deposited 4.2K, 3900A)

3.4089

3.9

278.2

3.52-3.39(From intermediate to mixed state at '\.6000A)

Data given

3.6-5.6

2.2-n.5.5

3.65-4.4 4.26-4.54

2.51

Data

given

HF

HF

LI. 1.0

2394

2240

2064

^2066

^2065

"^2000

"^2250

''2195

2274

2104

''2247

37
TABLE 2 (continued)

InMn

Material

(Implant 2K)

T,(K)

"o (oersted)

0-700ppm

''"0. 01-0. 04'^''0. 78-0. 73^"0. 21 -0.23

^"0. 9-0. 2^'^0. 1-0.8

^"0.17^''0.83

^"O. 013-0. 10''^0.9a7-0. 90

^"l-0.933%-0.067("^^'^'^^*'^^

^"l-0.93^"0-0.07

3.5-1.4

3.7-2 (With In ion implant)

17.8-18.1

4.6-6,6.6-7

HF

HF

HF

T^(0.015)(0.2% strain)

T^(0.012)(0.46% strain)

r(-0.004+0.002)(0.6% strain)

3.4-3.4-4.1

^"l-0^"0-l InSn^ 4.54 HF

^"l-0.921^"0-0.079 T^(0.017)(At 0.25% strain)

T^( -0.003-0. 002) (At 0.32% s

^"0.06^"0.94 T^(0.34)(At 2% strain)

^"x^^l-x T^(+0.4)(Also P to 12 kbar)

InTl(190A, 90A) 4.145, 3.880 HF

InTl(300A, 180A) 2.910, 3.530 HF

^"^^0-0.048 (Whiskers) T^(To+0.18)(0.25% strain)

^"0.94^"0.06(^'"P^^"^^ 3.65-4.3

^^0.42^'^0.58 4-9(As cast)

7-9(Quenched)

Ir^b3

^""0. 22-0. 29^^0.78-0. 71

^'"0.455'^^0.455°0.09

^"'0.40'^''0.55°0.05

^'"0.25-o''Vo.25^^0.75

^''0.2''^0.05^^0.75

^'''\/0.45^^0.55^^^^P°''^*^^' '^1000'^)

IrQ 42^^o 58^''^*^'^^*^ quenched)

IrTi,

1.66

8-9.2

10.5, 11.7

4.2-4

4.2-5.6-0.6

5.53

2

6.6

4.3

Crystal Structure T„(K)

HEX

Data given

A15

A15

TET

4.2

Data given

Refs.

2171

2374

2012

2375

2103

2235

2356 2394

^^2223

2326

2235

2235

2101

^2211

^2211

2235

^2195

1997

2132#

2158

1997

1997

2035

2035#

2035#

2126

1997

2035#

38
TABLE 2 (continued)

Crystal

Material T (K) (oersted) Structure T (K) Refs. ^ n

^''0.18-0.32'^''0.82-0.68 3.7-5-4.5 Data given 2035

^''0.05-0.18'^^ 0.95-0. 82 2.7-4- <1 Data 2035 given

^'^0.38^0.62 1-94' »^ 2175

iTgZr 1.85 2269

Ir2Zr 4."03 2269

1.85 2269

1.85 2269

2269

2269

2269

2269

2269

HF 2273

2161

CUB "^2281

87% CUB 2400

HEX 2127 2400

HEX 2354

CUB 2354

HF ^2145

2068

2297

LaQ^MOg 35Pbg gSg 13.2 HF RHOMB 2408

^'0-0.6^%.35^^^.0Ah 12-13.4-5 RHOMB 2408

Lag gMOgSgSn 12.2-11.4 2161

La^

o'*'°6^^8 11.39-11.05 HEX 2050

IrZr 2.3

2.1 (As cast)

^'"0.375^'"0.625

IrZr3 2.55, 7.05

2.1

^''0.3^''0.7 2.5, 7.35

7.3

IrZr2 2.75, 7.35 7.3

^'"0.2^'"0.8 4.3

3.15, 6.2

^^0.1^^0.9 5.5

3.5, 3.9, 4.35, 2.1 K04M0S2 6.9

K2M0gSg 2.7

KV0.043Nh-0.957(2000A) 9.8-9.3-9.4

La 5.99

La 5.12

La(P=0-25 kbar) 4.8-7.5

La(P=0-25-53-210 kbar) 5.9-8.7-10-12.9

La(Deposited ^150K, 5000-10,,000A) 4.90

'-^0.92'-"0.08 3.72

LaLu^Sng t;(-)

39
TABLE 2 (continued)

Material

LaMOgSeg

'-^0.98^^0. 02 LaNd^Sng

La0s2

LaPbj

^^PV3^^3-0

'-^0.84'' "^0.1

6

LaPr^Sn3

'-^l-0.958^''0-0.042^"3

'-^l-0.97''''0-0.03^"3

'-^0.99-0. 97'' ""0. 01 -0.03^"3

(P=0-18 kbar)

LaRuo

13384

La4Sb3

La3Sb3Y

La3Se4(n=l. 20-3. 67x10^''

La3Se4

'-^l-0.987^"'0-0.013-"3 LaSm Sn3

LaSm3Tb

LaSng

LaSn3(P=0-7-22 kbar)

LaSn3(P=0-19 kbar)

LaSn^Tm

LaSn,Yb

3 X La3Te^(P=0-22 kbar)

(P=10-50 kbar) 3-2.5 (P=80-160 kbar) 3.5-4.2(Non-hydrostatic)

"0 T^(K) (oersted)

Crystal Structure T^(K) Refs.

11.3 HF RHOhB 2196

3.60 2068

T'(-) 2297

9 HF CI 5 2096

4.05 U2 2274

1.7-0.5-2.2-0.1-4.5-4.2

(Also P study) 2059

2.20 2068

t;(-) 2297

6.5-1.3 670-180 2357#

6.43-2.33 2358

T^(-0.30, -0.24, -0.26) 2358

4.45 015 2403#

8.12-n.5(P=0-22 kbar)

'v6-'v5(P=10-150 kbar,

non-hydrostatic)

2040

0.25 CUB 2338

0.13 CUB 2338

2.60-6.86 HF 2079#

7.63-9.4-8.7(P=0-22 kbar)

M.5-3(P=30-160 kbar,

non-hydrostatic)

2040

6.38-0.3 Ll2 2154#

t;(-) 2297

T^(-) 2297

6.54, 6.628, 5.45 LI2 2057 2274

2297

T^(0-+0. 02-0. 045) CUB 2054

T^(-O.IO) 2358

T'(-) 2297

t;(-) 2297

4.61-'v3 2040

40
TABLE 2 (continued)

u Crystal

Material T (K) (oersted) Structure T (K) Refs.

^ n LaTlg 1.57 Llg 2274

^^0.2^0.8 ^-^^ 2068

-^O.ga^.O? 3-^6 2068

LigMOgSg 4.2-3.5 2161

^^2.6V^1.5-2.7 10.9-11.4-10.9 HF 2146 Li2,6V'l.9 ^^'2 "•" 2146

L12.6°4'''^.7 11-^ HF 2146

'-^°3.95^^2 ^^-^ ^^^° H^l 2391 #

L^.l°3. 95^^.9 5-^

^f^l 2391#

Li'l.OsV^.gS ^2-° ^^^° "^1 2391#

LiO^ qTi- 11.26 HI, 2148

11. 26-11. 5(P=0-22 kbar) '

Li20gTi^ ^11.4 HF 2378

11.2-ll,45(P=0-22 kbar)

12.5

'-^'o.8V^2.2 11.2-11.45(P=0-22 Hl^ 2148

LiO^Ti 12.5 Hl^ 2390 -^.OsV^.gS ^h 1-5 2390

'-^.33V^.67 "1] 1-5 2390

'-^2.5^1. 3,4.0 ^'2 2146

Lu 0.10 350 2084

Lu(P=45-190 kbar) 0.022-1.0 1996

Lu^ 2'*'V^8 6.20-5.47 HEX 2050 ^VO. 58^^-0. 42 1.36-1.8-1.4 2334

Mg(Flash evaporation, 50-lOOOA) 0,32 ^2192

*0-0 012'*"'^^2 ^•^' "^^ ^^^ 2^^^

Mn„ „ n7Nb,Sn ^c/T^„= 1-0.95 A15 2322 '0-0.07""3"' ""co

^. 00047-0. 0016^^^

4.2K, 1600-4000A)

1 Pb '0-0.004'^°l- <3K, 'V500A)

""0.00047-0.0016P^(°^P°^^"^^'^ 6.2-3.45 ^2247

%-0 004''h-0 996(DeP°sited 7.2-4.4-4.8-<0.3 ^2364

u J.UU4 I u.yyb (Crystalline) ^2095

7-<0.3( Amorphous)

Mn^Zn^_j^( Implant) ^2095

Mno.45ppn,Zn( Quench cond. 6K, t;(-1.3) ^2255

'\400A)

41
TABLE 2 (continued)

Material

Mo(99.995)

TJK)

0.912

Mo ( ".300A) 8.0

Mo, N (Deposited <160K,

1 ~X X MoN

'^.1000A) 'V8.5

6.8

X MoN^

A 'v6.4

MoNq_^q_33((RRR)4, Ng

in at 4.2K or room temp • 5

2.0-9.2 1.5-7.0

1 500-3000A)

^°l-0.77'^0-0.23^^'"P^^"^' 9.4-<1.8

RRR=4.6)

M0gNa2S3 8.6-8.0

MoNa^Sg 3.6

'^°0. 02-0. gS^'^O. 98-0. 05 8.465-0.428(As cast)

"Vo.05^^-0.95 9.2-7.8

"°0.1-0.2'^'^0. 765-0. 61%. 135-0.19 1.53-0.94-1.34

%-0.2'^^ -0.8^^2 7.30-1.20 %.03-0. 20'^''0. 97-0.8^^2 6.0-1.2

^-o.i^'^i-o.s^Vo.i 9.130-7.775

MOgNd^Sg 3.45-3.2

MOgNd^oSeg 8.22-7.65

MoNe (Implant)

%.18f^P0-0.73^1-0.27 ^-2-<0.05

MoO^Xe^ Data given

MoOs 12. 7-^.1 0.7 (Order;

5=0.91-0.57)

MO4P3 2.5

'^°1-0.72V0.28(^'"P^^"*' 9.4-<1.8

RRR=4.54)

Mo,PbS„ 14.7, 14.4

"0 (oersted)

HF

HF

HF

Crystal

HF

"°6.35P^S8

MOgPbSy(Irradiated 6K, neutrons)

12.6

12.30-4.8

'^.l 3. 5 (Annealed IIC)

HF

Structure T,,(K) Refs

2217

2029

"^2140

"2342

'2027

'2027

Data ^21 43 given

HEX

HEX

HEX

CUB

A15

ORTHO

RHOMB

RHOMB

RHOMB

1.2

2382

2161

2273

2029

2052

2257

2293

2100

2399#

2161

2050

2382

2406

2382

2174

1995

2382

2137 2162

2408

2285

42
TABLE 2 (continued)

Material

MOg_3PbSgSe2

"°6. 35^-1 V"l. 2-0

MOgPb, 2Seg

MOgPbSe^Te

MOgPbySeg.^TeQ,^

MOgPrSeg

'*'°0.85-0.55''Vo.2'^^0.5-0.35 MoRbQ 2^2 MOgRb2S8

"°0.95-0.7'^^0.05-0.3

"°0. 85-0. 70*^^0. 15-0. 30

T^{K)

"o (oersted)

Crystal Structure \

,(K) Refs

11.3-3.3-5.8--3.5 RHOMB 2038

5.4 HF RHOMB 2408

11.8-10.1-12 .8 HF RHOMB 2408

11.3-2.6 RHOMB 2038

3.6 RHOMB 2408

4.0 HF RHOMB 2408

3.5-4.1-<2 RHOMB 2038

9.2, 9.16 HF RHOMB (HEX) 2196

2050

3.4-11.0 2252

6.9 HF

0..6

2273

2161

1. 461-11. 015(As cast) 2029

6.6-9.1, 7.1--10.5 A2 2252 7.05-10.7, 7.3-11

MOq 2^^n 7 (Amorphous,

sputtered)

7.62 2241

%. 55-0. SS'^^O. 45-0. 15 (Deposited 300-900C,

10, 000-20, OOOA)

14.2-15-12.8 '2302

Mo

Q ^ReQ 3(10, 000-20, OOOA)

'^°0.98-0.6'^'^0.02-0.4 MO3S4

(%1000A)

15

-^7. 8-8. 2-5.

5

A15

RHOMB 1.1

'2302

'21 26

2287 2408

M0gSgSc^_2 2.6-2.8

MOgSgScQ gSn 11.4-12.0

Mo6Vo5^4-8 2-6.2

M03S2Se2 2.1

6 8 6 MogSgSn( Irradiated 6K, neutrons) 12.06-5.9

MOgSgSn 12.6, 13.3

HF

RHOMB

RHOMB

RHOMB

RHOMB

0.6

2161

2161

2038

2408

2161

2285

2008

2121

MOrSgSn 10.8, 11.3 HF RHOMB 2161 2317

2287

43
TABLE 2 (continued)

Material

"°6.35V"l.2

MOgSgSnTlQg

M°5V"Yo.5

MoS2Sr^

"°5^6Yo.5-2

MOgSgYb^

MOgSgZn

%.69-0.66^^0. 31-0. 34(^'"P^^"^)

MOnSe.

MOgSegSm^^

MOgSegTb^

2

MOgSegTm^^

'^Wl.O

MOgSegYb^O

MOgSegZn

^Vo.7'^^1-0.3

^°0.5-0.7''^'^0.5-0.3 %-0. 3^^1-0.

7

'^0.4T<^0.6

"°3^^4

MoTi

MoXe^( Implant)

V0.OOO7"''

NNb

NNb(Fine powder)

NNb

NNb

Vl.4f^^

TJK)

"0 (oersted)

Crystal Structure T,(K) Refs

11.8 HF RHOMB 2408

9.3-8.1 2161

9.95-7.65 2161

5.6 HF 2273

2.5-2.6 2161

8.18-7.3 2161

3.0 RHOMB 2287

'vl.7, 1.8 2382

6.3, 6.25 RHOMB 2287 2408

6.83-6.35 HEX 2050

5.70-5.34 HEX 2050

6.2-6.6-<5.5 RHOMB 2038

6.33-5.68 HEX 2050

6.21-5.97 HEX 2050

5.80-4.70 HEX 2050

RHOMB 1.5 2287

8.3-14.5-10-14-12 2267

14-12 CUB 2267

8.3-14.5 HEX 2267

10 D8^ 2267

RHOMB 0.03 2287 2408

0.2-4-2.8

1.2

2152

2256

2382

9.25-9.22

HF

2209

2310

2114

2283

16-4 HF '2007

13.5-7.5 HF ^2345

8.5-<4.5-16-<4.5 ^2321

44
TABLE 2 (continued)

Material T^CK) Goers ted) Struc

NNb( Deposited, -v-lOOQA) NNb( Implant, -vZOOOA)

14.67-8,85

10

HP

'^o.ssA.gss^o .069 13.3 Bl

'^0.955-0. 967^0. 005-0. 01 ^''q.982-.Q .967 ^^5.8.7 Bl

(NS)^(RRR>100) 0.33

NS 0.28. 0,254, 0.24

NS(RRR=70) 0.29 HF

NS Q..2Q5, 0.235 HF

NS

NSCP=0-9 kbar) 0.. 33 -.0,54

NS{Films on myl.ar)

NTa 8,68 Bl

^0-0.0038'''^ 4,48-4.22 Type I to

'\'0.5 0.5 <4,2-8.15-<4,2 Al

'^'oo.i^o.g <4,2-4,85-<4.2

NxW -^4.2, '^4.7 HF

NxW 4.1 HF

Na^gPb^

NaPb 6.1-5.2

CU

NaPbgCe-form) 5.6 590, HF

'^^0.068%. 932 6.68

'^V0.07P''1-0.93^100-100QA

particles)

HF

Nb(RRR-97, 223) 9.29. 9,27

Nb(Marz grade) 9J64-9.126CAS cast)

Nb(99.99) 9.55(As rolled)

Nb(99.99) IQ.UAfter 4 to 16 laser pulses)

NbCRRR=20) 9,255

9.415CDefornied 50%)

Nb 9.130, 9.154

Crystal

T„CK)

0,02

1,5

Refs

,

''2366i

^^201

6

2036

2036

2037

2224

2063

2136

2124

2231

2045

^2379

2144

2209

^2031

^20.31

^2027

^2027

21 55

2351

2351 #

2351 #

2253

2074

2029

2178

2178

2244

2399#

45
TABLE 2 (continued)

Material T,(K) (oersted)

Nb{<50 ppm 02 <n5 ppm intersticials) 9,30-9,36-9,28

(0^99% reduction

by rolling)

Nb(RRR=30.6)(02?)

Nb(Rolled foils)

Nb(Outgassed 2300C)

9. 25-^9( Irradiated 400-llOOC,

fast neutrons) HF

9,55-10(0^16 laser pulses)

HF

NbP(Co-sputtered)

^'^a'^O. 15-0. 9^^0.85-0.1 (Co-sputtered)

Nb2Pb(Siniultaneous evap. room temp .

)

^'^O . 66-0 . yO^'^O . 003-0 . 02^"0. 34-0 . 29

6.0-5.6 4.8-6.8-5.6(Annealed 700C)

6.5-7.5-6(Annealed 750C)

5-7-6. 5(Annealed 70QC)

Crystal Structure T„(K)

Nb( Irradiated oxygen

at <20K)

1 ions T^(-0,07, -0.1

Nb(Deposited 'v550C, 'V2500-4000A)9,3-9,1

Nb( Deposited- 130 to 700C) 9-<4.2

Nb(Deposited room temp.,

14,400A to 27A) 9.3-2.0

NbgMo^Sn T^(-0,7-0.6-l,3)

'^''0.60'^''0.40('-''^"^'^ quenched) 1.5

f^'^0.56'^^'0.16'^^0.28('- quenched)

iquid 3.3 HF

N^^^i 0-0.07^^2 7-2-2. 8-<l HEX

^''0.2%-0.7Ul-0.3 'v2-<0.08 Data given

f^^Ol.OO 1.61 147.6

'^t'Ol.02 1.38 HF

N^°0.96-1.02 1.37-1.55-1.38 129.7-143,6-

131.0

'^'^°0-0.00015 9.34-9,22 HF

Nb30s 0.94 A15

Nb,P 2.0 TET

A15 1..5

17.8-18.0 HF

Refs,

2249

2377

2169

2114

2331 2099

2177

'2221

'2384

^2032

2052

2023

2023

2210

2406

2276#

2276

2276#

2227

2132#

1995

^2067

^2067

^2346

2374

46
TABLE 2 (continued)

Material TJK)

"o (oersted)

N''0.8''^0.2 1.87-2.02

3.34-1.84

1.57-1.44

9.2Q

NbQ 7gPtQ 24(0'"<^er 0.96 to 0.85) 10.7-7

^^0.9-0.65^'^0.1-0.35

'*"^0. 72^^0.18^0.1 Nb3Pt

%. 74-0. 79''^0. 26-0. 21 %.8%.2 2.65

NbQ 53RhQ ^2 (Liquid quenched) 10.2

Nbp coRhQ .2(Microcrystalline) a4.8 %.80-0. 67^^^0.20-0. 33 0.39-<0.35

^'''vO.7-0.5'^^^-0.3-0.5

(-v.lOOOA)

0.6-5

NbS2(P=l bar-lO kbar) 5.9-5.9

Nb3Sb 0.2

NbSe2(See Table 3)

NbSe2 7.39 HF

NbSe2(RRR=30-35) 7.34, 7.29, 7.18 HF

NbSeg 7.3, 7.1 HF

NbSe, 7.25, 7.2

NbSeo

NbSeg

NbSe2

NbSe2(P=l bar-17 kbar)

NbSe2(P=0-35 kbar)

NbSe2(P=l-20 kbar)

NbSe,

%.94^^2T^'0.06

7.16-6.3

7.1

6.3

6.9-8.5

7.n-'x-9

0.7. 2-7.

3.25

1260(2141#)

Crystal Structure T„(K) Refs.

2071

CUB 2257

2257

A15 2132#

2398

2166

2071

CUB 2024

2023

2051

HEX

HEX

HEX

HEX

HEX

HEX

1280, 1200, HF HEX

943 HEX

HEX

HEX

MONO

HEX

1.0

'2126

1266

1853

2272#

2352

2393

2273

2226

2352#

2405#

2201#

2123#.

2181#

2141#

2386#

2405

2386#

2386#

2373

2151

2234

2361

2293

47
TABLE 2 (continued)

Material

%.97^^2'^''0.03

f^^^V^SOO ppm

%.7^^2^0.3

NbSe2SnQ_Q

Qg

'^^O. 83-0. 68^''0. 17-0,0.32 (Co-sputtered)

'^'^0. 78-0. 91^"'0. 225-0. 086

(Chem. vapor deposition

800-900C)

Nb,Si(l megabar implosion)

\,W

5 97

0,/ .19

7 2-<l 5

"o (oersted)

7-3

4.8-6.2-4.6-5.1 (Annealed 800C)

4.4-5.5-3.2(Annealed 750C)

8.05-7.35

4.30-3.55

18.5-19

15-16

13-14

HF

Crystal Structure T (K)

n HEX

HEX

HEX

A15

A15

1.5

Refs.

2293

2141#

2383

2383

2210

^2067

2206

2088

1998 2180

Nb3Si

NbSi( Sputtered, 650-750C)

0.29

8.6-4.65

5.2-6.5, 5.4

HF TET 2237#

2088

'2395

^'^0.74^"' 0.26

'^''0.82^^.09^"0.09 Nb3Sn

Nb3Sn

5.6

17.9, Data given HF

HF

(as prepared]

(liquid quenc h)

<4<4

2

2 2245

2125

A15 2180 2389#

2166 2298#

2272#

AT 5 2107 2322 2375

2189

Nb3Sn

%.8^"0.2

Nb3Sn(0-99% reduction in area)

Nb2Sn( Irradiated fast neutrons]

Nb3Sn( Irradiated <30K, oxygen ions)

Nb3Sn( Irradiated <30K, oxygen ions)

Nb3Sn( Irradiated neutrons)

17.6

17( After drawing)

12-13(After drawing)

18.2(Laser preparation)

17.8-17.2

18-14. 5( Irradiated in superconductive state)

16.3-4.4(0rder 0.95-0.5)

16-7.5 HF

18-2.5(0rder 0.98-0.6) HF

2407

2106

2109

2396

2197

2133

2301 2019 2190

48
\

T,(K)

TABLE 2 (continued)

Material

Nb2 g7Sn(Deposited 800C) 18.3-16.8

Nb2 72.3 ggSn( Deposited 700-800C) 18.3-11.4

»o (oersted)

Crystal Structure

Nb^Sndn bending M500A)

Nbp i7_^ ,gSn(Sputtered)

NbSn( Deposited 12,500-600A)

Nb3Sn( Deposited 800C, 4500A)

Nb3Sn( Deposited 700-800C> 2000-3000A)

Nb3Sn(Deposited 560-750C,

1 000-1 0,000A)

Nb2Sn(Vapor deposition,

50,000A)

NbjSn

NbjSnTi^ T^(+0.7+0.2)

'^'^0. 78-0. 77^"0. 22-0. 22^^0.002-0. 01 17.8-18.1

Nb3SnZr^ T^(-l. 5+1.0)

^^0.297^^0.702 ^-2^

'^''^^0-20,000 ppm

Nbg 2TaQ .TiQ -(Weight fractions) 9.2

'^''1-0 95^''0-0 05^"^''9'^* fractions) 9.2-9.9-9.3

7-^10

+0.1K to -O.IK

(-20 to kp/min^)

6.6-17.21

17.3-17.1

18.1-2.95(Irradiated

helium ions)

14-17.6

7.3-3.5-41 (Irradiated oxygen-ions)

18-2. 95( Irradiated helium ions)

'^'^0.34-0.8^^0.66-0.2 %.4T^'0.6

HF

HF

HF

9.19(As drawn-1.3xlO°)

9.19-9.35(Annealed

NbQ 2T''q p(Laser pulse anneals) 6.9-5.2

"^Vo. 11 ^'"1-0.89

Nbg gTig ^(Foils, 50,000A,

weight fractions)

^'^0.33^"'0.66^'"0-0.06 Nb^_Q g5ZrQ_o Q5(Weight Fractions) 9.2-9,1-10.8

%. 752-^0. 25

^''0.75^''0.25

'^'^0.67^'"0.33

T„(K)

A15

A15

AT 5

A15

T' (-0.13-0. 09)(Irradiated <30K oxygen ions)

HF

10. 51 (As drawn 3.0x10^)

10.9

11.2, 10.75 (Laser treated)

Refs.

'2289

'2289

'2028

^^2372

'2135

'2105

'2II8

'2246

^2165

'2372

2052

2374

2052

2371

2215

2048

2052

2097

2030

2178

2169

2256

2208

2262

2052

2030

2026#

2106

49
TABLE 2 (continued)

Material

^'^0.2-0.95^^0.8-0.05

^''0-0.0233''''^l -0.977 03Rb^W ¥^0.2W

Sn{'x.l00A)

Oi.oe^i

^0.95^^

'^0.96-1.17^''

°^0. 3, 0.7*^^0. 7, 0.3

0^0.5^^0.5

°^0.25''"^0.75

P3Rh4

PTa3

PTh

PZr3

Pb(99.9999)

Pb(Particles lOOA)

Pb(P=16-129 kbar)

Pb{On PbTe, Te 0-130A)

Pb(Evaporated on Si 60-lOOK

1I-20OA)

Pb{17A, Extrapolated)

Pb(Deposited '\/77K on glass,

330A-100A)

PB(10,OOOA)

Pb{'\^50A, Plus '\'30A coat of Ge,

Si, C, Zn, Bi, Mo, Se and PbTe)

Pb(2700A)

Pb("L'jlk amorphous")

Pb(Vdpor quenched on mica)

Pb(200-400A, on Cu 300-600A)

Pb(%2000A)

Pb( 250-1 l.OOOA)

T^(K)

"0

(oersted)

7. 907-10. 853-10. 5(Cast)

7. 78-10. 883-10. 525(Annealed)

7.85-7.25

3.26-3.73(Thermal vapor growth at

HF

1050C)

t;(-)

0.94 HF

0.65 HF

4.3-4.2

5.92

2.5

0.4 ^.2

4.5

7.190

Bulk Tc

6.53-3.74

<1.8-7.3

2.8-7.3

6.2

7.194-6.594

7.25^

7.20-7.15

6.6

6.65

2.4-3.88

7.20

661-318

HF

Crystal Structure T„(K) Refs.

2029

2014

2139

2337

2142

2142

^2314

2276#

2276#

2276#

A3 2404#

2267

HEX 2267

ORTHO 1995

TET 1995

2402

TET 1995

2399

2064

2318

HF

'2250

^2220

'2172

'2200

'2164

^2329

'2204

'2172

'^21 72

'2248

'2228

'2066

50
TABLE 2 (continued)

Material

PbSe(P^300-340 kbar)

PbTe{ [^175-260 kbar)

PbTe(n=7xlO^^ at 4.2K)

PbTe(Pb, In, Tl , Al and Sn films

on PbTe monocrystals, 0-8A)

P'^0.4-0.8T^0.6-0.2('^2000A)

''''0.395'^ "^0.605

'''^0. 25^*^0. 75

''^0.30^''0.70 Pt(RRR MOO, 6000)

PtTi

,

''^0-0.3^^-0.7

PtV.

''^O. 24^0. 76

•^^0. 88*^ 0.12

"^^0.50^0.50

''^O. 05-0. 75'^0. 95-0. 25

'^V5'^^0.5

'^'^0.25^*^0.75

RhZr2

'^'^0-0. 36'^'"l -0.64

T,(K)

'^0 (oersted)

Rh'0.23^'"0 yyC-^^"'"^ quench)

^"0.5^^0.5

'^"0.25''''^0.75

•^Vo. 043^^^1-0. 957

'^"'v0.45^''0.55^^^^P°''^*^^ ^lOOOA)

S, gSeQ «Ta(See Table 3)

^1.6^^0.4^^

$1 gSeQ ^Ta(Monocrystals)

S2Ta(See Table 3)

6.4-6.6

8-6.4

(Eddy currents produce effects

thought to be superconductive

at 20K)

< 1-6.7

4.6-6.80

8.8-5

2.4 HF

0.49

0.4-2.2-4.5-3- <1.2(As cast)

0.6-0.4(Annealed)

2.63

2.70

HF

HF

7.85-7.3-6.0

7.9-7.5-6.2

10.8 HF

6-6-11-11.5-10.5

6-4-8(As quenched)

4.1 HF

7.5-7.0-4.2

8.1-7.15-5.6

7.85-7.07

2.8

4.1 485, HF

3.85 551, HF

Crystal Structure T„(K) Refs.

2086

2086

2.0 2062

1884

HEX

A15

A15

A3^%

A2

HEX

HEX

(Rapid

quench)

HEX

0.04

'2218

^2228

2304#

2267

2023

2187

2035#

2035

2175

2175

2404#

2404#

2404#

2267

2267

2202

2021

2202

2267

2267

2337

2126

2226

2386

2386#

2181

51
TABLE 2 (continued)

Material

SpTa

S2Ta

STh

^V002^"0.998^'^'^''^'^^'"^^

SiV3(P-0-29 kbar)

Si Vol Irradiated, helium ions)

SiV -(Getter sputtered,

'\-2500-4000A)

'v3 SiV^lSputtered)

SiV3( Deposited 700-800C,

2000-3000A)

SiV^3(Deposited 650-1250C,

400-7650A)

SiV^3( Deposited 11500, 4875A)

Sn(RRR=10,000)

T,(K)

"o (oersted)

0.8

0.49

T^(0.6)(At 3% strain)

Sbjl T^(-0. 001+0. 022)

ScSe 3.7

^Vo. 5^*^1-0.

1.36-1.75-0.95

Se2Ta(See Table 3)

Se3Ta( Fibrous, RRR ^80) 2.1

SeTh 1.72

SiV3(RRR=17) 16.7(Monocrystal)

SiV3 16.5

SiV3 16.6(Monocrystal)

^^0.227-0.26^0.773- 0.74 14.8-16.87

SiV3(RRR=22) 16.9(Monocrystal)

^"0.2-0.3^0.8-0.7 14.5-17.2-15.8

13. 0-16-10. KLiqu

^^3^5

HF

HF

HF

16.70-17.5

16.5-2.2

16.7-16.1

0,4-16.7

3.5-17

16.8-2i2(Irradiated helium ions)

15.8-12.2

15.8-15.4

T'(-, +) Deformed vs orientation

Crystal Structure T„(K) Refs.

HEX(2H) 2405#

HEX(4Hb)l 1 2405#

2386#

2402

2235

2101

2402

2334

MONO 2291

2402

2344

2189 2020

2272#

2271#

2238#

A15 2261

2009

2245

0.076 2238#

2039

^2372

2019

A15

'2221

'2221

'2116

^2118

'2025

''2025

2385

52
TABLE 2 (continued)

H„

Material T^(K) (oersted)

Sn{Whiskers 0-0.67% strain) 3.7249-4.109 315-343, HF

Crystal Structure ^n^*^^

Sn(99.9995, 54-500A) 4.027-3.792-3.932

Sn(270-n,500A) i. 88-3. 72 Data given

Sn(730A, 1390A) 4.30, 4.59

^"0.22-0.37^'^0.78- 0.63 7.4-6.4

SnVg 3.8

^"0-0.075^1-0.925 5.43-1.3

Ta(RRR=3900, 2400, 400) 4.53, 4.52, 4.50(Monocrystals)

Ta 4.41

Ta(RRR=29) 4. 41 5 (Deformed 70%) 4.385

TaVg 3.6

^^0.036^0.964 4.55

^^0.056^0.944 4.7 HF

'''^0.84-0. 10%. 16-0 .90

^^0.81^'"0.19 6.5 HF

''^0.71 ^""0.29 6.5 HF

Tc(RRR=80) 7.85 HF

Tc(P=70-110 kbar) 7.4-6.8

7.35-6.7(Annealed)

Tc(55-1600A) 6.2-5.9-7.7

Tc(80A) 6.3 HF

Tc('\-50,000A) 7.46

^'^O. 97^^0.03 10.89-10.23

^^0.85^^0.15 9.87-7.20(As cast)

8.10-7.73(Annealed)

TcTI Vr^'i-0

Te(P=l-3xl0^^)

Te(P=l-4xl0^^)

'\.0. 4- 10. 89-^7.

2.0-4.2(P=40-60 kbar)

II 2.4-5. 1(P=38~55 kbar)

III 4.1-4.2(P='v53~62 kbar)

IV 4.72-4(P=63-80 kbar)

HEX

CUB

A2

C15

A2

CUB

HEX

A12

B2 1.7

Refs.

2185

2235 2186

2185

^2129

^^2066

^2077

2267

2272#

2320

2388

2144

2244

2313#

2319#

2087

2404#

2303

2303

2337

2267

2267

^2093

"^2093

^2154

2001

2001

2001

2001

2083

2083

53
TABLE 2(continued)

Material

Th

T,(K)

H (oersted)

Crystal Structure T,(K)

1.360

Th 1.38 160

T^^O.OOl 0.7 70(0. 3K)

"^^^0.0005 1.0 105(0. 3K

"^^^0-0.00110 1.360-0.550

^^-0. 3^^0-0. 7 1.36-1.65-0.8

'^^-0.85^'"0-0.15 1.36-2.22

"''^.97, 0.91^0.03, 0.09 <2.2, 3.7-4.3

Tl 2.382 177.20

T1(-^2000A) 2.36

U(Alpha) 0.2-0.45

U(Alpha) 0.27, 0.20, 0.27

^0.028^0.972 4.16 HF

V(RRR=24) 5.24

V(RRR=10) 4.90 5.13{Deformed)

V(Aiiiorphous, -^20-300A) 1.4-3 HF

V(Crystalline, 60-500A) 3.3-4.5 HF

V(Evaporated room temp.

100-2300A)

< 1.5-5 HF

^0.948^0. 052 4.08

V2Zr 8,9 HF

VoZr 7.3

w

Zn(See Table 3)

Zn(Whiskers many orientations)

Zn(Quench condensed 6K)

Zn (Quench condensed 6K, --400A)

Zn(50-1000A)

T,;.(+0.07 to -0.04)(at 0.3% strain)

Ti(0.185 to -0.035) (at 4xl08N/m2)

0.83

1.51

1.4

CI 5

C15

A2

Refs.

2400#

2335#

2336

2336

2336

2335#

2334

2334

2256

2047#

"^2228

zni§

2277#

2242#

2319#

2242#

2244

^2092

''2092

"2308 2275

2319#

2081

231 2#

2404#

2236

^2255

'2255

'2163

V

54
Material

NbSe2(aninionia)

NbSe2(cyclopentylamine)

NbSe„(cyclopropyl amine)

NbSe2( dimethyl amine)

NbSepCethylamine)^ c

NbSepCethylene diamine)

q ^c

NbSe^Cethylenediamine)^

25

NbSe2(methylamine)Q

g NbSe2(triethylamine)

^1.6^^0.4''"^^P-^'^^*^^"^^0.5

5l.6^^0.4^°(P^'^^'^^"^^0.5

S-TaC ammonia)

S2Ta(aniline)Q yc

S2Ta(collidine)g -.ry

S2Ta(cyclopentyl amine)

S2Ta( cyclopropyl amine)

S2Ta (dimethyl ami ne

S2Ta(deuterium)Q qc

S2Ta(ethylamine)Q

g

S2Ta{ethylenediamine)Q

25

S2Ta(methylamine)Q c

S2Ta(pyridine)Q_5

ictive Materials with Organic and Related Constituents.

"itical-magnetic-field data in Table 4.

^^0 Crystal

T^(K) (oersted) Structure ^,,(K) Refs.

0.6 HEX 2405

0.90 HEX 2405

1.1 HEX 2405

3.0 HEX 2405

1.20 HEX 2405

HEX 35 2405

1.05 HEX 2386#

2405

0.95 HEX 2405

HEX 1 3 2405

2.30 194 HEX 2386#

175, (HF data 2386 given

5.0 HEX(4H) 2405

3.8 HEX(2H) 2405

2.9 (HF data 2226

given)

2.80(Monocrystal) HEX 2386#

3.15 HEX 2405

3.0 HEX 2405

3.4 HEX(2H) 2405 3.8 HEX(4H)

HEX

2405

2386#

3.5 HEX(4H) 2405 3.4 HEX(2H)

HEX

2405

2386#

3.2 HEX(4H) 2405#

. / HEX(IT) 35 2405

4.7 HEX(2H) 2405

5.6 HEX(2H) 2405 4.6 HEX(4H) 2405

3.30(Monocrystal) HEX(2H) 2386

3.2 HEX(4H) 2405

3.47 (HF data 2226

given)

3.45(Monocrystal) 2181

55
TABLE 3 (continued)

Material

S2Ta(pyridine)i ,,(plus S)

S2Ta( triethyl amine)

T,(K)

1.3

Se„Ta{ethylenediamine)„ 25 O-^^

Zn(zinc etioprophyrin) 2.0

"0

rsted)

Crystal Structure T,(K) Refs

208 (HF data given) 2386

HEX(4H)

HEX(2H) 1.3 2405 2405

HEX 2405

''2163

56
TABLE 4. Critical Magnetic Fields H^,^, H^, H^g ^nd H^^ of Superconductive Materials (Mainly Type II),

NOTE: Magnetic fields in kilooersteds.

Material T^(K) H

cl "c »c2 "c3 ^obs

Refs.

^9o-0.02'^''g.33^^0.66 117-110 4.2 2262

'^^2''^0.G0626'-^0.994 1.3 0-0.042-0 0.15-1 3 2098

'^^2^^0.0066-0.009^^ -1.5-0.2 Data given 2332

'^^^^0-0.017^^3-2.983 6-0.8 Data given 2333

'^^0-0.08"'^0. 2-0. 12^3 15-14.1 205-210-195 4.2 2010

Alln 2.282, 3.178 Data given ^2211

Al2La 3.3 2.5 2332

'^^0-0.6'^°6.35V"l.2

11.8-14.3 325-560

(Estimated) 2408

2089

AlNbj -17.5 Data given 2193

Al3Nb 0.64 0.70 0.56 2170

A1Nb2 0.74 0.31 0.68 2170

'^^0-0.15'^''l-0.85 9.03-5. 15(Cast)

8.8-8.1-10.0

19-22-8.5 3.9-20.8-11.64.2

4.2 2049

'^lo-0.1^^3S"l-0.9 17.8-18.0-17.9 230-290-280 4.2 2374

A1^Nb3Sn^_^ -16.6 -195 2108

'^^ 0-0. 025^''0. 33^^.66 9.1-8.2 118-102 4.2 2262

'^^0-0.265^1-0.735 5.43- <0.5 Data given 2320

'^^O.Oa'^^O. 15^^0.81 0.90-0.88 3.4, 6 2330

AsNbg -0.31 0.22 0.2 2237

'^"0.24'-'0.76('-^''"^<^ 3.3(Amcrphous) 55 2023

quenched)

4.05(Crystal1ine ) 38

^^0.22^"0.78 4.53, 5.61 Data given 2243

^^0-0.05^"l-0.95

3.4-4.27 0. 3-0.32 0.6-1.6 2102

^^0-0.016^"l-0.984

276-0.28 0.28-1.6 2355

^^0. 016-0. 05^"0. 986-0. 95 28-0.35 0.28-0.60

^^0-0.3''''l-0.7 7.2-8.65-7.9 Data given Data given 2110

S. 3-1.6'-^ 11.1 022 95 4.2 2219

57
TABLE 4 (continued)

Material T,(K)

^cl \2 \3 obs

Refs.

^1.55^^0.3^0.7

Ca MoSo

17.1

4.0

C^0.2'-30.8^°6S^8 8.9

^^0.004^^0. 80^*^0. 20

3.6

^^0-0.0075'-^0.80^'^0. (Re-entrant)

20 5.25- <0.

'^^La3.,Y

CeRu2 6.28

S.075N''Se2 4.5

''^O.l''o.l'^2.9'^ 4.87-4.94

CSo_3MoS2 6.9

CuMo^S^ 10.6, 10.4

Cu2M0gSg 10.4

%.7"°3^^4 5.8

^"0-0.03^^0.33T^'0.66 9.3-8.8-9.2

Do-l"^2 9.7-3.4

D2HfV2 5.8

^"0.2'-^0.8"°6^^8 10.7-11.4

^"0.1-0.8"°6.35V"l.- -0.24 ^^-^

Feo_3HfV^

7

5

Fen ii^HfV, o.: 9.5

1.2

"^n-n n'^^'^n 7f,^^o ?4 n iq 8.56-1.80(Disordered)

U U.Ob o./b 0.^4-0.19 io.lO-1.40(Ordered)

''Vo. 04^*^0. 76^*0. 24-0. 19

^^0.034^^5"

•"^0.017^^^"

17

17.5

280 2188

74(Parallel)

1365

2.1 (Perpend.)

2.4

2.4

2273

292 220 4.2 2196

11 2167

Data given 2167

Data given 2360

50 2096

Data given 2225

1.3-1.72(Perpend.) 2046

220 94.5(Parollel)

3316(Perpend.)

4.1

4.1

2273

45 8.8 2408

130 2408

65 3.6 2408

117-114-118 4.2 2262

Data given 2122

40 2 2339

350 4.2 2196

300-370-340 2408

70 3 2081

125 7 2081

145-20 -145-20

2398

105-15(Disordered)

115-22(0rdered)

2398

265 2322

260 2322

58
TABLE 4 (continued)

Material Tc(K) "cl "c \2 \3 'obs Refs.

""^O-O.IO^Z^^

^^0.05^2^^0.95

''^o.a^.?^'" ^^0.5"°5^6^"

^^0.5"°5^6^"

0.8-3.3-< 1.3

3.2-2.7 '

4.4

~3(0.5Tc) 75(0.5T(,)

13.5-4(P=0-1G0 kbar)

^^0.01-0.04^^0. 73-0. 82^"0. 26-0. 14 17.8-18.1-18.0

GaVgllrradiated and non-irradiated)

^^0.4"°6. 35^^0.6^8 4.9

^'^0.5"°6.35P'^0.4S8 3.0

^^0.6"°6.35V"0.6 6.7

GeNb2( Deposited ~740C, 22.7 Max. 600-1 5, OOOA)

GeNb- 10.5-7.5

^^-vO. 25-0. M^^'0. 75-0. 86 (Deposited 750-lOOOC)

GeNb2(6ranular)

''^0-0.02'*"^0.33^^0.66

^^0.01,0.05,0.45^^0.99,0.95,0.55

22.3-20.7(Sputtered)

18.2-22-21 (Chem. Vapor

Deposition)

8.9-8.2

0.40-0.51

^.^.6^''2 9.7-2.2

HPd 9.62

"1-0.933^^ 9.62-5.5

^^0.26"''0.74 9.3

HfV2 9.7

HfVg 9.3

HfVg 9.2

"^0.15-0.6^0. 85-0.4 9-9.3-8.4

0.9(4. 14K)

~32(Parallel)

2.4(Perpend.)

Data given

40

125(0.75T^)

(H 2 decreases with P increase)

230-300

Data given

105

6

55

33 36(Perpend.)

25 45(Parallel)

(10,000A/2240A)

340-370

255-390

260-330

360-340

115-118-110

Data given

(Data given,

HfVgHog)

0.98

Data given

7074.5

120

120

268

200

150-220-180

1.6 2225

2042

3 2081

2089

2317

4.2 2374

2381

1 2408

2.5-1 2408

1.2 2408

20 ^2309

2007

J2367 ^2341

^2345

4.2 2262

2330

2122

2349

2349

1.6 2222#

7.2 2339

7 2081

4.2 2005

4.2 2005

59
TABLE 4 (continued)

Material VK) ^cl 'c2 'c3 obs

Refs.

^^0.55^2^'"0.45

^^^o.sV^o.s

"^0.4-0.3'^^'"0.6-0.7

^VlV^l-O

Hg(300-10,880A)

In(Type I to Type II)

ln(0n Pb Te, 15-340A)

10.1-7.8

10.1

10.2

8.5-10.1-9.2

T^(^-0.2)

Data given

2.2-^5.5

240 4.2 2005

240-85 4.2 2005

275

230 4.2 2005#

254{Extrapolated)

208

1.7 4.2 2183

105-240-200 4.2 2005

Data given "^2091

Data given ^2065

Data (perpend.)

Shown(Paranel)

'2250

^"0. 98-0. 874'^3o. 02-0. 126 0.46-1.25 2104

^"0.01-0.04'^ '^0.78-0 73^"0 .21-0.23

17.8-18.1

230-290 4.2 2374

^"0.05'^'^3^"0.95^'^°'"^'"^^^ 270-280(Sn bath)

230-280(Sn, Cu bath)

4.2

4.2 2374

^"o.u^'^o.ss 1.4 4.2 2375

^"0.013-0. 10'' '^0.987- 0.90 Data given Data given 2103

InSn^ 4.54 1.349(Parallel a) 1.219(Paranel c) 2326

InTl (Superimposed films) Data given ^^2211

^•"0.38^0.62 1.94 21.6 2175 hA^°h 6.9 40(Perpend.) 2273

La(Deposited :i50K,

5000, lO.OOOA) 4.90 12.5(Perpend.)

5.2(Paranel)

2.6

4.2 ^2145

'-^0.2'^°6.35P''0.8^8 13.2 560 480 4.2 2408

LaMOgSg 11.3 463 370 4.2 2196

LaOs2 9 1.6 30 2096

La3Se^(n=l. 20-3. 67x10^^) 2.60-6.86 0.0223-

0.1192 0.0742-

0.340 2079#

'-^2.6V^'l.9 11.2 185 4.2 2146

•-^"2.604^^1.5-2.7 10.9-11.4-10.9 123-185-77 4.2 2146

^'z.e^''h.7 11.4 162 183

4.2 2146

60
TABLE 4 (continued)

Material T,(K)

^cl \2 'c3 obs Refs.

^hh'^U :ii.4

Mo('v300A) 8.0

MoN^ 6.8, 'x-6.4

vma^s^ 3.6

^e.zs'^h 12.6

MOg 3PbSgSe2 5.4

"°6.35''''0-lV"l.2-0

11.8-10.1-12

M0gPbSe7Te 4.0

MOgPrSeg 9.2

MoRbo3S2 6.9

"°3^2S^2 2.1

"°6.35V"l.2 11.8

MoS^Sr^ 5.6

NNb

NNb 16-4

NNb 16

NNb 9

NNb 13.5-7.5 NNbMOOOA) 14.67-8.85

NS(RRR=70) 0.29

^0-0.0038^^ 4.48-4.22

>70 4.2 2378

NaPb^(Partic1es 100- lOOOA)

4.1

Data given 0.828-0.784

80~250(GLAG Theory)

6.4 ''2140

55 4.2 ^2027

5023(Paralle1)

7.6 3.2(Perpend.)

2.2

2.2

2273

540

450 4.2 2408

130 7034.2 2408

395-325-540 2408

54 2.6 2408

204

144 4.2 2196

40{Perpend.) 2273

40 1.2 2408

330 2408

2317

46(Paranel)

2013.6(Perpend.)

6.3

3.4

3.4

2273

4.06-4.63 4.2 2114

180-260-210 '^'2007

180 ^2007

260 ^2007

280-250 ^2345

139-214 ^2366^

8.1(Parallel)

0.87(Perpend.) 2136

2124

.784 2209

42 1.7 ^2027

Data given 2253

61
TABLE 4 (continued)

Material T^(K)

^cl \2 \3 obs

Refs.

Nb(RRR 30.6)

Nb(Outgassed 2300C)

Nb

^^0.56"^0.16'^^0.28

9.25-9(Irradiated

fast neutrons)

NbO

NbO,

1.02

b-0.00015

3.3

1.38

9.34-9.22

1.44

1.21

0.06

,Sn, '^'^0. 66-0. 70^'^0. 003-0. 02-"'0. 34-0. 29 17.8-18.0

'^^3'''^0.05^"0.95^'^°'"''"^^^

NbSe2(RRR-30-35)

NbSe.

7.18-7.39(Monocrystals)

7.3

^'^0. 78-0. 91^''o. 225-0. 086 8.05-7.35

(Deposited 800-900C

Chem. vspor)

Nb^Si 0.29

Nb3Sn 18

Nb3Sn

Nb25n(Irradiation 7.5-16 <30K Oxygen ions)

Nb2Sn(Irradiated 18-2.5(0rder from 0.98-0.6)

0.31

'**'^0. 78-0. 77^"0. 22-0.

22"*"^ 0. 002-0. 01 17.8-18.1

^''0.33^^0.65^''0-0.06

03Rbo_2W

Oi.csTi

^.95^^

0.94

0.65

3.05-5.05 4.2 2377

2331

2.74 4.2 2114

2.83

3.10

4.2 2099

34 2.2 2023

0.14 0.8 2276

Data given Data given 2227

230-290 4.2 2374

190-280(Sn

220-260(Cu

bath)

Sn bath)

4.2 2374

145(Parallel)

44-46(Perpend.)

2393

140(Parall(

6840(Perpend

21

Bl)

) 4.4

4.4

2273

2226

19.3-14.9

0.097-0.112

255

75-155

230-40

230-300

4.2

1.35

4.2

2206

2237#

2322 2189

2375

2133

2301

2374

Data given 2215

114-107-108 4.2 2262

48(Parallel c) 17.3,6.9(Perpend. c, phi=0°,30°)

2142

32.9 2276

30.5 2276

62
TABLE 4 (continued)

Material T^{K)

^cl \2 'c3 obs Refs.

Pb(on PbTe,Te)(0-1304) ^1.8-7.3

quenched)

2.4

PtV3 2.63

''^O. 24^0. 76 2.70

RhZr2 10.8

%.23^''0.77('-iq"id

quench)

4.1

h.ehA'^' 4.1

h.e^^A'^^

S2Ta(Pyridine), ,2 3.47

S2Ta(Aniline)2/4 2.9

Se3Ta(RRR^80) 2.1

SiV3(RRR=17)

SiV3(RRR=22)

Sn (Whiskers)

^^0.056^0.944

^^0.81 ^"^0.19

^^0.71 ^"0.29

Tc(RRR=100)

Tc(80A)

"^0.028^0.972

V(Aniorphous, '\.20-300A)

V(Deposited Room temp.

500-2300A)

VgZr

16.7(Monocrysta1)

16.9(Monocrystal) 0.77

0.72

3.73

4.7

6.5

6.5

6.3-7.1-7.8

6.3

4.16

1.4-3

2.5-5, < 1.5-4.5

8.9

Data shown '2250

16 1.8 2023

35.1 2175

29.9 2175

106.5 2202

80.1 . 2202

Data given 2226

2386

Data given 2181

Data given 2226 2386

Data given 2226

Data given 2291

60 14

4.2

2344

2189 2020

2009

Data given 2186 ~10 2087

15 2 2303

16 2 2303

Data given 2267#

34 5.6 '^2093

'\.50 2242#

55 ^2092

4.0-4.8-2.46(Paranel)

1. 98-2, 9-4. 0( Perpend.)

4.2 ^^2308

95 2081

63
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2031. Kilbane, F. M. and Habig, P. S., J. Vac. Sci. Technol. ^2, 107 (1975).

2032. Wolf, S. A., Kennedy, J. J., and Nisenoff, M. , J. Vac. Sci. Technol. J3., 145 (1976).

2033. Oesterreicher, H., Clinton, J., and Bittner, H., J. Solid State Chem. J6, 209 (1976).

2034. Mackliet, C. A., Gillespie, D. J., and Schindler, A. I., J. Phys. Chem. Solids 37, 379 (1976).

2035. Junod, A., Flukiger, R. , and Muller, J., J. Phys. Chem. Solids 37, 27 (1976).

2036. Storms, E. K. , Giorgi, A. L. , and Szklarz, E. G. , J. Phys. Chem. Solids 36, 689 (1975).

2037. Street, G. B., Arnal, H., Gill, W. D. , Grant, P. M. , and Greene, R. L. , Mat. Res. Bull. 10 877 (1975).

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2039. Shelton, R. N. and Smith, T. F. , Mat. Res. Bull. jO., 1013 (1975).

2040. Shelton, R. N., Moodenbaugh, A. R., Dernier, P. D. , and Matthias, B. T. , Mat. Res. Bull. JO,

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2041. Vandenberg, J. M. , Matthias, B, T. , Corenzwit, E., and Barz, H., Mat. Res. Bull. jOi, 889 (1975).

2042. Fleming, R. M. and Coleman, R. V., Phys. Rev. Letters 34, 1502 (1975).

2043. Gubser, D. U. and Webb, A. W., Phys. Rev. Letters 35, 104 (1975).

2044. Poate, J. M. , Testardi, L. R. , Storm, A. R., and Augustyniak, W. M. , Phys. Rev. Letters 35, 1290 (1975).

2045. Gill, W. D., Greene, R. L., Street, G. B., and Little, W. A. Phys. Rev. Letters, 35, 1732 (1975).

2046. Skokan, M. R. , Morris, R. C, and Moulton, W. G. , Phys. Rev. BIJ,, 1077 (1976).

2047. Alterovitz, S., Phys. Rev. B13_, 121 (1976),

2048. Bychkov, Yu. F., Vozilkin, V. A., and Uzlov, V. Yu., Fiz. Metal. Metalloved. 38(2), 295 (1974);

translation Phys. Metals Metallography 38, (2) 61 (1974).

2049. Pan, V. M. , Latysheva, V. I., Khusid, Ye. N., Dekhtyar, I. Ya., and Mikhalenkov, V. S., Fiz. Metal. Metalloved. 38, (2) 303 (1974); translation, Phys. Metals Metallography 38, (2) 69 (1974).

65
2050. Shelton, R. N. , McCallum, R. W., and Adrian, H., Phys. Letters 55A, 213 (1976).

2051. Kuz'menko, V. M., Lazarev, B. G. , Mel'nikov, V. I., and Sudovtsov, A. I., Fiz. Metal. Metalloved.

37, (5) 1006 (1974); translation, Phys. Metals Metallography 37, (5) 98 (1974).

2052. Ronami, G. N. and Berezina, V. P., Fiz. Metal. Metalloved. 37.' ('^) 872 (1974); translation, Phys. Metals Metallography 37, (4) 175 (1974).

2053. Khan, H. R. and Raub, CH. J., Metal! . 29, 673 (1975).

2054. Huang, S., Chu, C. W., Fradin, F. Y., and Welsh, L. B. , Solid State Commun. 16^, 409 (1975).

2055. Bader, S. D. , Phillips, N. E. , Maple, M. B. , and Luengo, C. A., Solid State Commun. 16, 1263 (1975).

2056. Sleight, A. W. , Gillson, J. L. , and Bierstedt, P. E. , Solid State Commun. J7, 27 (1975).

2057. Herrman, G. and Bommel , H. E. , Solid State Commun. j^, 241 (1975).

2058. Igalson, J., Sniadower, L., Pindor, A. J., Skoskiewicz, T. , Bluthner, K. , and Dettman, F.

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Solid State Commun. U.' 309 (1975).

2059. Damsma, H. and Havinga, E. E., Solid State Conmun. }7_, 409 (1975).

2060. Testardi, L. R. , Solid State Commun. J2> 871 (1975).

2061. Robbins, C. G. , Ishikawa, M. , Treyvaud, A., and Muller, J., Solid State Coirmun. }]_, 903 (1975).

2062. Leger, A., Klein, J., and Bok J., Solid State Commun. ]7_, 1131 (1975).

2063. Civiak, R. , Junker, W. , Elbaum, C. , Kao, H. I., and Labes, M. M. , Solid State Commun. J7, 1573 (1975).

2064. Matsuo, S. , Sugiura, H., and Noguchi, S., J. Low Temp. Phys. 25_, 481 (1974).

2065. Gray, K. E., J. Low Temp. Phys. 15, 335 (1974).

2066. Dolan, G. J., J. Low Temp. Phys. 15, 133 (1974).

2067. Johnson, G. R. and Douglass, D. H., J. Low Temp. Phys. U, 575 (1974).

2068. Legvold, S., Green, R. W., Beaudry, B. J., and Ostenson, J. E., Solid State Commun. 18, 725 (1976).

2069. Pendrys, L. A. and Douglass, D. H., Solid State Conmun. 18, 177 (1976).

2070. Hoyt, R. F. and Mota, A. C. , Solid State Commun. 18, 139 (1976).

2071. Oesterreicher, H. and Clinton, J., J. Sol. State Chem. 17_, 399 (1976).

2072. Muller, W. H.-G., Baumann, F. , and Buckel , W. , Thin Solid Films 28^, 83 (1975).

2073. Petersen, J., Appl. Phys. 9, 283 (1976).

2074. Haen, P. and Teixeira, J., Rev. Phys. Appl. £, 879 (1974).

2075. Hechler, K. and Volk, P., Z. Naturforschung 30a, 1779 (1975).

2076. Khan, H. R. and Raub, Ch. J., Z. Phys. B23, 127 (1975).

2077. Bolz, J. and Pobell, F. , Z. Phys. B20, 95 (1975).

2078. Bernhardt, K.-H., Z. Naturforsch. 30a, 528 (1975).

2079. Sosnowski, J., Phys. Stat. Sol. b72, 403 (1975).

66
2080. Zimmermann, M. , Wolf, G. , and Bohmhamnel, K., Phys. Stat. Sol. a31 , 511 (1975).

2081. Duffer, P., Sankar, S. G., Rao, V. U. S., Bergner, R. L. and Obermyer, R., Phys. Stat. Sol. a31, 655 (1975).

2082. Nikitin, V. P., Novikov, V. I., Neshpor, V. S., and Popov, V. V., Fiz. Tverd. Tela Jl, 3406 (1975);

tranalation, Sov. Phys. Solid State ]]_, 2229 (1975).

2083. Il'ina, M. A. and Itskevich, E. S., Fiz. Tverd. Tela 17, 3461 (1975); translation, Sov. Phys.

Solid State }]_, 2266 (1975).

2084. Nikulin, E. I., Fiz. Tverd. Tela U^, 2795 (1975); translation, Sov. Phys. Solid State 17, 1864 (1975).

2085. Il'ina, M. A. and Itskevich, E. S., Fiz. Tverd. Tela ]]_, 154 (1975); translation, Sov. Phys. Solid

State U, 89 (1975).

2086. Brandt, N. B., Gitsu, D. V., Popovitch, N. S., Sidorov, V. I., and Chudinov, S. M., ZhETZ Pis.

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2087. Tittman, B. R., Phys. Letters 56A, 405 (1976).

2088. Pan, V. M. , Alekseevskii, V. P., Popov, A. G., Beletskii, Yu. I., Yupko, L. M. , and Yarosh, V. V., ZhETF Pis. Red. 21, 494 (1975); translation, JETP Lett. 21, 228 (1975).

2089. Alekseevskii, N. E. , Bazan, Ch., Dobrovolskii , N. M. , and Tsebro, V. I., ZhETZ Pis. Red. 20, 465 (1974); translation, JETP Lett. 20, 211 (1974).

2090. Tsymbalenko, V. L. and Shal'nikov, A. I., Zh. Eksp. Teor. Fiz. 65, 2086 (1973); translation, Sov. Phys. JETP 38, 1043 (1974).

2091. Appleyard, E. T. S. , Bristow, J. R. , London, H. , and Misener, A. D. , Roy. Soc. London: Proc. 172A , 540 (1939).

2092. Kuz'menko, V. M. , Lazarev, V. G., Mel'nikov, V. I., and Sudovtsov, A. I., Zh. Eksp. Teor. Fiz. §1, 801 (1974); translation, Sov. Phys. -JETP 40, 396 (1974).

2093. Teplov, A. A., Mikheeva, M N. , and Golyanov, V. M. , Zh. Eksp. Teor. Fiz. 68, 1108 (1975);

translation, Sov. Phys. JETP 41, 549 (1975).

2094. Dubrovskaya, L. B. and Nazarova, S. Z.. Zh. Eksp. Teor. Fiz. 68, 238 (1975); translation, Sov. Phys. -JETP 41, 115 (1975).

2095. Levin, H., Selisky, H., Heim, G. , and Buckel , W., Z. Phys. B24, 65 (1976).

2096. Baberschke, K. , Z. Phys. B24, 53 (1976).

2097. Kadikova, G. N., Metal Icvedeniye i Term, obrabotka Metallov. (2), 28-32 (1973).

2098. Winzer, K. , Z. Phys. 265, 139 (1973).

2099. Hag. Meas. Group, Nanking Univ., Acta Phys. Sinica 24, (4) 307 (1975).

2100. Yamamoto, M. , Thesis of Hokkaido University, Sapporo, Japan (1975) and private communication.

2101. Ignat'eva, T. A., Makarov, V. I., and Cherevan, Yu. A., Zh. Eksp. Teor. Fiz. 67, 994 (1974);

translation, Sov. Phys. JETP 40, 492 (1974).

2102. Kirschner, I., Bankuti , J., Kiss, G. Y., Kovacs, I., Laszlof'fy, L. , Remenyi , Gy. , and Sajo, K.,

Zh. Eksp. Teor. Fiz. 66, 2141 (1974); translation, Sov. Phys. -JETP 39, 1054 (1974).

67
2103. Jastrzebska, T. , Trojr.ar, E., and Makiej, B., Acta Phys. Pol. A49 . 359 (1975).

2104. Sulkowski, C. , Zacharko, W., and Mazur, J., Acta Phys. Pol. A50 . 37 (1S76).

2105. Mankorntong, N. and Neal, W. E. J., Surface Tech. 5_, 78 (1977).

2106. Lekhtyar, I. Ya. , Ivanov, L. I., Karlov, N. V., Kuz'min, G. P., Nischenko, A. M. , Prokhorov, A. M , Rykalin, N. N. and Yanushkevich, V. A., Kvantoveya Elek. (Moscow) 3, 844 (1976); translationSov. J. Quant. Electron. 6_5 460 (1976). ~

2107. Snead, C. L. Jr. and Parkin, D. M. , Nuclear Tech. 29, 264 (1976).

2108. Dew-Hughes, D., Luhman, T. S. and Suenaga, M. , Nuclear Tech. 29, 268 (1976).

2109. Sayitskii, E. M. , Baron, V. V., Korostelin, A. A., Kadyrbaev, A. R.. Sumarokov, V. N. and Gusev, V. A , Dokl. Akad. Nauk SSSR 227_, 840 (1976); translation: Sov. Phys. Dokl . , 21, 211 (1976).

2110. Lyon, M. and Zepp, G., Can. J. Phys. 55, 55 (1977).

2111. Vandenberg, J, M. , Matthias, B. T. , Corenzwit, E. and Barz, H., J. Sol. State Chem. 18, 395 (1976).

2112. Tarutani, Y. and Kudo, M., Jap. J. Appl. Phys. !§_, 509 (1977).

2113. Dahlgren, S. D. , Metal. Trans. 7A, 1375 (1975).

2114. Lippmann, G. , Schelten, J., and Schmatz, W., Phil. Mag. 33, 475 (1976).

2115. Ghosh, A. K. and Douglass, D. H., Phys. Rev. Letters 37, 32 (1976).

2116. Testardi, L. R. , Poate, J. M. and Levinstein, H. J., Phys. Rev. Letters 37_, 637 (1976).

2117. Lutz, H., Weismann, H., Kamnerer, 0. F. and Strongin, M., Phys. Rev. Letters 36^, 1576 (1976).

2118. Poate, J. M. , Dynes, R. C. , Testardi, L. R. and Hammond, R. H., Phys. Rev. Letters 37, 1308 (1976) and 38, 788 (1977).

2119. Gill, W. D. , Bludau, W., Geiss, R. H., Grant, P. M. , Greene, R. L., Mayerle, J. J. and Street, G. B., Phys. Rev. Letters 38, 1305 (1977).

2120. Fertig, W. A., Johnston, D. C, DeLong, L. E., McCallum, R. W. , Maple, M. B. and Matthias, B. T.

,

Phys. Rev. Letters 38, 987 (1977).

2121. Fradin, F. Y., Shenoy, G. K. , Dunlap, B. D. , Aldred, A. T. and Kimball, C. W., Phys. Rev. Letters

38, 719 (1977).

2122. Duffer, P., Gualtieri, D. M. and Rao, V. U. S. , Phys. Rev. Letters 37, 1410 (1976).

2123. Kobayashi, N., Noto, K. and Muto, Y., Solid State Conmun. 20, 1081 (1976).

2124. Dee, R. H., Berlinsky, A. J., Carolan, J. F. , Klein, E. , Stone, N. J., Turrell, B. G. and Street, G. B., Solid State Conmun. 22, 303 (1977).

2125. Flukiger, R. and Jorda, J. L., Solid State Coimun. 22, 109 (1977).

2126. Collver, M. M. and Hammond, R. H., Solid State Commun. 22, 55 (1977).

2127. Legvold, S., Seaudry, B. J., Ostenson, J. E. and Harmon, B.-N., Solid State Cormiun. 21, 1061 (1976).

2128. Johnston, D. C. , Shelton, R. N. and Bugaj, J. J., Solid State Coirmun. 21, 949 (1977).

2129. Kalra, S. B. and Dheer, P. N., Solid State Co^iun. 21, 551 (1977).

53
2130. Bohmhammel , K. , Wolf, G., Alekseevski i , H. E. and Krasnoperov, E. P. Solid State CommLin. 2J_, 519 (1977).

2131. Webb, G. W. and Matthias, B. T. , Solid State Commun. Z]_, 193 (1977).

2132. Kunnaev, E. Z. , Werfel, F. , Brummer, 0. and Flukiger, R. , Solid State Comnun. 21, 239 (1977).

2133. Besslein, B. and Ischenko, G., Solid State Commun. ^9, 867 (1967).

2134. Claeson, T. , Hanson, M, and Ivarsson, J., Solid State Commun. 20^, 233 (1976).

2135. Moore, D. F. , Rowell, J. M. and Beasley, M. R., Solid State Coimur,. 20, 305 (1976).

2136. Azevedo, L. J., Clark, W. G. , Deutscher, G., Greene, R. L., Street, G. B. and Suter, L. J., Solid State Commun. 19, 197 (1976).

2137. Muhlratzer, A., Nickl, J. J., Seeber, B. and Sprenger, H., Solid State Commun. j^, 239 (1976).

2138. Junod, A., Flukiger, R. , Treyvaud, A. and Muller, J., Solid State Commun. }9_, 265 (1976).

2139. Lou, L. F., Solid State Commun. 19' 335 (1976).

2140. Koepke, R. and Bergmann, G. , Solid State Commun. 19, 435 (1976).

2141. Garoche, P., Veyssie, J. J., Manuel, P. and Molinie, P., Solid State Commun. |9^, 455 (1976).

2142. Stanley, R. K., Skokan, M. R. , Morris, R. C. and Moulton, W. G., Solid State Commun. 19, 555 (1976).

2143. Linker, G. and Meyer, 0., Solid State Commun. 20, 695 (1976).

2144. Thorv/arth, E., Dietrich. M. , and Politis, C. , Solid State Commun. 20, 869 (1976).

2145. Hong, S. 0. and Tomasch, W. J., Solid State Commun. 20, 965 (1976).

2146. Foner, S. and McNiff, E. J. Jr., Solid State Commun. 20, 995 (1976).

2147. Mota, A. C. and Hoyt, R. F. , Solid State Commun. 2^, 1025 (1976).

2148. Shelton, R. N., Johnston, D. C. and Adrian, H., Solid State Commun. 20, 1077 (1976).

2149. Chu, C. W., Huang, S. and Sleight, A. W. , Solid State Commun. 18, 977 (1976).

2150. Siemens, R. E. and Griffiths, D. J., Solid State Comnun. 18, 1097 (1976).

2151. Berthier, C. , Molinie, P. and Jerome, D. , Solid State Commun. 18, 1393 (1975).

2152. Collings, E. W. and Ho, J. C, Solid State Commun. 18, 1493 (1976).

2153. Sigsbee, R. A., Appl. Phys. Letters 29, 211 (1976).

2154. DeLong, L. E., McCallum, R. W. , Fertig, W. A., Maple, M. B. and Huber, J. G., Solid State Commun. 22, 245 (1977).

2155. Caton, R. and Satterthwaite, C. B., J. Less-Common Met. 52, 307 (1977).

2156. Satterthwaite, C. B. and Peterson, D. T., J. Less-Common Met. 26, 361 (1972).

2157. Raub, CH. J. and Khan, H. R. , J. Less-Common Met. 48, 1 (1976).

2158. Drys, M. , J. Less-Common Met. 52, 81 (1977).

69
2159. Oesterreicher, H., Clinton, J. and Misroch, M, , J. Less-Cornmon Met. 52_, 129 (1977).

2160. Dumoulin, L., Nedellec, P., Chaumont, J., Gilbon, D. , Lamoise, A-M. and Bernas, H., C. R. Acad. Sc. Paris 283B, 285 (1976).

2161. Alekseevskii, H. E., DobrovoTskii , N. M. and Tsebro, V. I., Pisma Zh. Eksp. Teor. Fiz. 23, 694

(1976); translation: JETP Letters 23., 639 (1976).

2162. Decroux, M. , Fischer, 0. and Chevrel, R. , Cryogenics ]]_, 291 (1977).

2163. Alekseevskii, N. E., Tsebro, V. I., Zakosarenko V. M. , Al'shitz, A. I. and Personov, R. I., ZhETF Pis. Red. 15, 558 (1972); translation: JETP Letters 15, 472 (1972).

2164. Kurakado, M. , Takabatake, T. and Mazaki, H. , Bull. Inst. Chem. Res. Kyoto Univ., 55_, No. 1, 38 (1977).

2165. Ischenko, G., Adrian, H., Klaumunzer, S., Lehman, M. , Muller, P., Neumuller, H. and Szymczak, W.,

Phys. Rev. Letters 39, 43 (1977).

2166. Webb, G. W. , Moehlecke, S. and Sweedler, A. R. , Mat. Res. Bull. 12, 657 (1977).

2167. Fertig, W. A. and Maple, M. B., Solid State Commun. 2_3, 105 (1977).

2168. Steiner, P. and Gumprecht, G. , Solid State Commun. 22, 501 (1977).

2169. Chang, C. C. , Ho, W. C. and Chan, Y. W., Cryogenics 16, 433 (1976).

2170. Leyarovski, E. , Leyarovska, L. , Krasnopyorov, E., Kokot, L. , Horyn, R. and Mydlarz, T., Z. Physik

327 , 57 (1977).

2171. Bauriedl, W. and Heim, G., Z. Physik B26, 29 (1977).

2172. Ruhl, W. and Hilsch, P., Z. Physik B26, 161 (1977).

2173. Poon, S. J. and Durand, J., Solid State Commun. H, 999 (1977).

2174. Sweedler, A. R. , Moehlecke, S., Jones, R. H., Viswanathan, R. and Johnston, D. C, Solid State

Cormiun. 21, 1007 (1977).

2175. Wulffers, L. A. G. M. , Frijters, G. A. M. , Kok, H. B., Klaassen, T. 0. and Poulis, N.J., Physica

84B, 177 (1976).

2176

2177

2178

2179

2180

2181

2182

2183

2184

Haen, P., Monceau, P. and Waysand, G., Physica 86-88B , 470 (1977).

Klaumunzer, S. , Ischenko, G. and Muller, P., Z. Physik 258, 189 (1974).

Chang, C. C. , Ho, W. C. and Chan, Y. W., Cryogenics J6_, 433 (1976).

Lc, K., Bevk, J. and Turnbull, D. , J. Appl . Phys. 48, 2597 (1977).

Noolandi, J. and Testardi, L. R. , Phys. Rev. B15, 5462 (1977).

Prober, D. E. , Beasley, M. R. and Schwall, R. E., Phys. Rev. B 15, 5245 (1977).

Hallak, A. B., Hanmond, R. H. and Geballe, T. H., Appl. Phys. Letters 29, 314 (1976).

Inoue, K. and Tachikawa, K. , Appl. Phys. Letters 29_, 386 (1976).

Rowell, J. M. and Schmidt, P. H., Appl. Phys. Letters 29, 622 (1976).

70
2185. Bibby, B. R. , Nabarro> F. R. N. , McLachlan, D. S. and Stephen, M. J., Philosophical Trans. Roy. Soc. (London) 278, 311-49, #1282 (1975).

2186. Lutes, 0. S. , Phys. Rev. 105, 1451 (1957).

2187. Uher, C. , Lee, C.-W. and Bass, J., Phys. Letters 61A, 344 (1977).

2188. Francavilla, T. L., Carter, F. L. and Webb, A. W., Phys. Letters 59A, 388 (1976).

2189. Foner, S. and McNiff, E. J., Jr., Phys. Letters 58A, 318 (1976).

2190. Luhman, T. and Sweedler, A. R. , Phys. Letters 58A, 355 (1976).

2191. McConville, G. T. , Sullenger, D. B., Zielinski, R. E. and Gubser, D. U., Phys. Letters 58A , 257

(1976).

2192. Claeson, T. and Jacobsen, N., Phys. Letters 58A, 263 (1976).

2193. Khan, H. R. , Raub, Ch. J., Luders, K. and Szucs, Z. , Appl. Phys. U, 123 (1977).

2194. Roy, R. and Rogowski, D. A., Phys. Letters 57A, 60 (1976).

2195. Bauriedl, W., Heim, G. and Buckel , W., Phys. Letters 57A, 282 (1976).

2196. Foner, S., McNiff, E. J. Jr., Shelton, R. N., McCallum, R. W. and Maple, M. B., Phys. Letters 57A

345 (1976).

2197. Besslein, B., Ischenko, G. , Klaumunzer, S., Muller, P., Neumuller, H., Schmelz, K. and Adrian, H., Phys. Letters 53A, 49 (1975).

2198. Silverman, P. J. and Briscoe, C. V., Phys. Letters 53A, 221 (1975).

2199. Sixl, H., Phys. Letters 53A, 333 (1975).

2200. Duggal, V. P. and Ashwini Kumar, P. K. , Phys. Letters 53A, 397 (1975).

2201. Harper. J. M. E., Geballe, T. H. and DiSalvo, F. J., Phys. Letters 54A, 27 (1975).

2202. Togano, K. and Tachikawa, K. , Phys. Letters 54A, 205 (1975).

2203. Barz, H., Phys. Letters 54A, 233 (1975).

2204. Karr, D. , Rodewald, W. and Sollig, H. , Phys. Letters 54A, 237 (1975).

! 2205. Granqvist, C. 6., Milanowski, G. J. and Buhrman, R. A., Phys. Letters 54A, 245 (1975).

I 2206. Kawamura, H. and Tachikawa, K. , Phys. Letters 55A, 65 (1975).

2207. Niculescu, D. , Bradea, I., Popa, M. , Ivanciu, 0. and Cruceanu, E., Phys. Letters 55A, 233 (1975).

2208. Schmelz, K., Ischenko, 6., Besslein, B., Greiner, A., Klaumunzer, S., Muller, P. and Neumuller, H., Phys. Letters 55A, 315 (1975).

I 2209. Auer, J. and Ullmaier, H. , Phys. Rev. B7., 136 (1973).

I 2210. Hauser, J. J., Robbins, M. and DiSalvo, F. J., Phys. Rev. B8, 1038 (1973).

2211. Escher, J. S. and Ginsberg, D. M. , Phys. Rev. B3, 735 (1971).

2212. Welsh, L. B., Wiley, C. L. and Fradin, F. Y., Phys. Rev. BJl, 4156 (1975).

71
2213. Delfs, R. J., Beaudry, B. J. and Finnemore, D. K. , Phys. Rev. B11 , 4212 (1975).

2214. Testardi, L. R. , Meek, R. L. , Poate, J. M. , Royer, W. A., Storm, A. R. and Wernick, J. H. , Phys. Rev.

B11 , 4304 (1975).

2215. Ostenson, J. E. and Finnemore, D. K. , Phys. Rev. B12, 114 (1975).

2216. Sweedler, A. R. and Cox, D. E., Phys. Rev. B22_, 147 (1975).

2217. O'Hara, S. G. and Marshall, B. J., Phys. Rev. B8, 4175 (1973).

2218. Miller, D. L. , Strongin, M. , Kammerer, 0. F. and Streetman, B. G. , Phys. Rev. B8, 4416 (1973).

2219. Francavilla, T. L. and Carter, F. L. , Phys. Rev. U, 128 (1976).

2220. Miller, D. L. , Phys. Rev. BIS, 4180 (1977).

2221. Testardi, L. R. , Poate, J. M. and Levinstein, H. J., Phys. Rev. BJ5^, 2570 (1977).

2222. Missel!, F. P., Oliveira, N. F. Jr. and Shapira, Y., Phys. Rev. BU, 2255 (1976).

2223. Moore, E. L. , Reed, R. W. and Brickwedde, F. G. , Phys. Rev. B15 , 187 (1977).

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78.
"REVIEW ARTICLES AND BOOKS CENTERING UPON SUPERCONDUCTIVE MATERIALS"

Bethoux, 0., "Les Supraconducteurs a base de Nb", Rev, de Physique Appliquee 5^, 495-503 (1970).

Alekseevskii , N. E., "Phasenumwandlungen und Supraleitung", In Phasenumwandlungen in festen Zustand,

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\

80
AUTHOR INDEX

(Includes listed authors in Bibliography)

Abe, Y.

Acrivos, J. V.

Adrian, H.

Ageev, N. V.

Akhmedov, S. Sh.

Akihama, R.

Alekseevskii, N. E. 2163, 2267, 2268,

Alfred, A. T.

Alshitz, A. I.

Alterovitz, S.

Anayama, T.

Andro, P.

Aoi, T.

ij Appleyard, E. T. S.

Arkhipov, V. E.

Armbruster, H.

Arnal , H.

Asada, Y.

Ashby, D. A.

Ashwini Kumar, P. K.

Aubert, A.

I Auer, J.

Augustyniak, W. M.

Azevedo, L. J.

jBaberschke, K.

Bacon, D. D.

Bader, S. D.

JBahl, S. K.

Baixeras, J.

Balakhovskii, 0. A.

2050, 2148, 2165, 2,197,

2013, 2088, 2089, 2130,

2308, 2317, 2320, 2322,

2333,

2096,

2055,

2291 Balster, H.

2405 Bankuti, J.

2411 Baranowski, B.

2323 Barbee, T. W. Jr

1984 Baron, V. V.

2374 Bartlett, R. J.

2161, Barz, H. 2323

Barz, H. E. 2121 Bass, J. 2163

Bauer, H. 2047 Baumann, F. 2384

Bauriedl, W. 2366

Bayard, M. 2360

Bazan, C. 2091 Beasley, M. R. 2301 Beaudry, B. J. 2332 Belash, V. P. 2037 Beletskii, L. M. 2292 Beletskiy, Yu. I 2295 Berezina, V. P. 2200

Bergmann, G. 2321 Bergner, R. L. 2209 Berlinsky, A. J. 2044

Berman, I. V. 2136

Bernas, H. 2288

Berthel, K. H. 2025 Berthier, C. 2277 Besslein, B. 2263

Bevk, J. 2366

Bibby, B. R. 2267 Bierstedt, P. E.

2354

2102

2325

2246

2012, 2109, 2407

2284

2006, 2025, 2041, 2111, 2203

2316

2187

2019, 2310, 2396

2072

2171, 2195

2383

2089, 2322

2135, 2181

2068, 2127, 2213

1999

2088

2266

2052

2027, 2140

2081

2124

2318

2015, 2160

2009

2151

2133, 2197, 2208

2179

2185

2056

81
Bilir, N.

Bittner, H.

Blackford, B. L.

Blaugher, R. D.

Bludau, W.

Bluthner, K.

Bogomolov, V. N.

Bohmharmiel , K.

Bok, J.

Bolz, J.

Bommel , H. E.

Bongi, G.

Boning, K.

Bonjour, E.

Boyer, A. C.

Bradea, I

Braginski, A. I.

Brandt, N. B.

Braun, H. F.

Brickwedde, F. G.

Bridges, F.

Briscoe, C. V.

Bristow, J. R.

Brown, B. S.

Brumner, 0.

Bucher, E.

Buckel, W.

Bugaj, J. J.

Buhrman, R, A.

Burt, R. J.

Bychkov, Yu. F.

2359 Bychkova, M. I. 2407

2033 Bystrom, S. 2313

2387 Cadieu, F. J. 2282

2376 Cappelletti, R. L. 2399

2119 Carlo, R. 2008

2058, 2308 Carolan, J. F. 2124

2327 Carpenter, F. C. 2259

2080, 2130 Carter, F. L. 2188, 2219

2062 Caton, R. 2155

2008, 2077 Caton, R. H. 2239

2057 Cave, J. A. 2259

2345, 2398 Cazabat, M. 2366

2396 Chan, Y. W. 2169, 2178

2381 Chandler, J. H. 2235

2388 Chang, C. C. 2169, 2178

2207 Chaudhari , P. 2342

2284, 2341, 2367 Chaumont, J. 2015, 2160, 2296

2086, 2318 Chencinski, N. 2282

2309 Cherevan, Yu. A. 2101

2223 Chernoplekov, N. A. 2242, 2319

2375 Chevrel, R. 2038, 2162

2198 Chu, C. W. 2054, 2149, 2234

2091 Chu Inov, S. M. 2086

2285 Civiak, R. I. 2063, 2224

2132 Claeson, T. 2134, 2192, 2307, 2363

2404 Clark, W. G. 2136

2072, 2095, 2195 Clinton, J. 2033, 2071, 2159

2128 Coleman, R. V. 2042, 2225

2205 Collings, E. W. 2152, 2256, 2340

2370 Collver, M. M. 2126

2048 Cook, J. W. Jr. 2235, 2236

82
, Cooper, A. S. 2025 DiSalvo, F. J.

Corenzwit, E. 2006, 2041, 2111, 2316 Dtnitriev, V. P.

1 Cotignola, J. M. 2335 Dobrovol 'skii, N. M.

i Couach, M. 2381 Dolan, G. J.

Cox, D. E. 2216, 2397 Douglass, D. H.

Cox, J. E. 2280 Doulet, J.

Cruceanu, E. 2207 Doyle, T. B.

Culbert, H. V. 2351 Drys, M.

Currie, P. D. 2243 Dubrovskaya, L. B.

Dahlgren, S. D. 2113 Duffer, P.

Oamsma, H. 2059 Duggal, V. P.

Daniel, M. R. 2284, 2341, 2367 Dumoulin, L.

Das, B. N. 2280 Dunlap, B. D.

Das Gupta, A. 2331, 2378 Durand, J.

j Davidov, D. 2288 Dynes, R. C.

Davies, T. J. 2259 Dzevitskii, B. E.

1 Davis, W. T. 2235 Eckert, D.

ii Dayem, A. H. 2410 Efimov, Yu. V.

j, De Long, L. E. 2120, 2154, 2358 Elbaum, C.

i Decroux, M. 2162 Elliott, R. 0.

; Dee, R. H. 2124 Entin-Wohlman, 0.

' Dekhtyar, I. Ya. 2049, 2244 Escher, J. S.

^ Delfs, R. 0. 2213 Evdokimova, V. V.

'i Dernier, P. D. 2040, 2380 Falke, H.

Dettmann, F. 2058 Fertig, W. A.

Deutscher, G. 2136, 2230, 2248 Finlayson, T. R.

> Dew Hughes, D. 2108 Finnemore, D. K.

^, Dheer, P. N. 2129 Firstov, S. A.

1 Di Salvo, F. J. 2201 Fischer, Oe.

' Diatschenko, V. 2234 Fisher, E. S.

Dietrich, M. 2144 Fisk, Z.

2210, 2234

2329

2089, 2161, 2317

2066

2067, 2069, 2115

2381

2349

2004, 2158

2094

2081, 2122, 2339

2200

2160

2121

2173

2118, 2228, 2372

2407

2009

2012, 2245

2063, 2224

2406

2248

2211

2315

2255

2120. 2154, 2167

2243, 2261, 2298

2213, 2215, 2336

2266

2345, 2398, 2408

2277

1995

83
Fleming, R. M.

Flewitt, P. E. J.

Flis, V. S.

Flukiger, R. 1999, 2398

Fogelholm, R.

Foner, S.

Fradin, F. Y.

Francavilla, T. L.

Freyhardt, H. C.

Frijters, G. A. M.

Fritzsche, H.

Fujita, T.

Fukase, T.

Gambino, R. J.

Gamo, K.

Gann, V. V.

Gardner, W. E.

Garoche, P.

Gavaler, J. R.

Geballe, T. H. 2182,

2405,

Gebhardt, P.

Geerk, J.

Geiss, R. H.

Geller, S.

Gerber, J. A.

Gey, W.

Ghosh, A. K.

Gi 1 bon

Gill, W. D.

Gillespie, D. J.

Gillson, J. L.

2042, 2225

2249

2266

2035, 2125, 2132, 2138, 2343

2311,

2146, 2189,

2054, 2121,

2188,

2351,

2284,

2201, 2260, 2359, 2369, 2410

2356

2196

2212

2219

2377

2175

2232

2294

2344

2274

2016

2300

2337

2141

2367

2386

2314

2382

2119

1998

2330

2331

2115

2150

2037, 2045, 2119

2034

2056

Gindina, S. D.

Ginsberg, D. M.

Giorgi, A. L.

Girgis, K.

Gitsu, D. V.

Glover, R. E. Ill

Golovashkin, A. I.

Golyanov, V. M.

Goshchitskii, B. N.

Graczyk, J. F.

Granzvist, C. G.

Grant, A. J.

Grant, P. M.

Gray, K. E.

Green, R. W.,

Greene, R. L.

Greiner, A.

Griffiths, D. J.

Gualtieri, D. M.

Gubser, D. U.

Gumprecht, G.

Gusev, V. A.

Habig, P. S.

Haen, P.

Haeussler, E. N.

HafStrom, J. W.

Halbritter, H.

Hallak, A. B.

Hammond, R. H. 2118,

Hampshire, R. G.

Hanson, M.

Harmon, B. N.

2012

2211, 2247

2036

2011

2086

2348

'

2265

2093

2301

2342

2205, 2307

2373

2037, 2119, 2231

2065

2068

2037, 2045, 2119, 2136, 2231

2208

'

2150 '

2122, 2339 '

2022, 2043, 2191, 2237

2168

2109

2031

2074, 2176, 2361

2309^

2285, 2289^

2331

2182, 2246, 2369, 2410

2126, 2182, 2246, 2369, 2372

2030'

2134

2127

84
Harper, J. M. E. 2201, 2231, 2260 Ivanov, L. I.

Harrison, R. B. 2026 Ivarsson, J.

1 Hauck, J. 2008 Iwasa, Y.

Hauser, J. J. 2210 Jablonski, H. P

Havinga, E. E.

f 2059 Jacobsen, N.

Hechler, K. 2075 Janocko, M. A.

Heim, G. 2095, 2172, 2195, 2281, 2237 Jastrzebska, T.

Keiniger, F. 2404 Jerome, D.

' Heller, W. 2262 Johnson, D. C.

Herrman, G. 2057 Johnson, G. R.

' Hilsch, P. 2172 Johnson, W. L.

Ho, J. C. 2152, 2256 Johnston, D. C.

Ho. W. C. 2169, 2178

Jones, H. Hohlfeld, C.

i

2304

Jones, H. C.

. Hong, S. 0. 2145 Jones, R. H.

' Horyn, R. 2002, 2003, 2170

Jones, W. B. Hoshi, A. 2393

Jorda, J. L.

, Howar, R. E.

1 2405

Joy, D. C. Hoyt, R. F. 2070, 2147, 2401 Junker, W.

1 Huang, C. Y. 2234

Junod, A.

'j Huang, S. 2054, 2149

Kadikova, G. N.

1 Huber, J. G.

1

2154, 2334, 2400

Kadyrbaev, A. R Huber, R. W. 2280

Kalra, S. B.

' Hull, G. W. Jr.

1 2410Katmierer, 0. F.

1 Hulliger, F. 2338 Kammeroiner, L.

1 Igalson, J. 2058, 2350

Kampwirth, R. T

1 Ignat'eva, T. A. 2^01 Kao, H. I.

( Il'ina,,M. A. 2083, 2085, 2328

Karkin, A. E.

i 11 lew, N.

j

2002, 2004

Karlov, N. V.

1 Inoue, K. 2005, 2183

Karr, D.

1 Ischenko, G. 2133, 2165, 2177, 2197, 2208

Kastner, J.

j Ishikawa, M.

i' 2061, 2399 Kawamura, H.

' Itskevich, E. S.

ii

2083, 2085

Kay, E.

1 Ivancio, 0. — - 2207

2106

2134, 2363

2010

2255

2192

2367

2103

2151, 2373

2174

2067

1997, 2023, 2024, 2241, 2342

2120, 2128, 2148, 2271, 2389

2390, 2391, 2402, 2411,

2345, 2398

2007

2174, 2397

2286

2125

2380

2063

1999, 2035, 2138, 2237

2097

2109

2129

2117, 2218, 2250

2395

2289

2063, 2224

2301

2106

2204

2255

2018, 2206

2281

85
Keesom, P. H. 2276 Kudo, M.

Kennedy, J.J. 2032 Kumzerov, Yu. A.

Kernhardt, K, -H, 2078 Kupfer, H.

Khan, H. R. 2053, 2076, 2157, 2193 Kurakado, M.

Khusid, Ye. N. 2049 Kurkin, Yu. P.

Kilbane, F. M. 2031 Kurmaev, E. Z.

Kimball, C. W. 2121 Kuroishi, T.

King, C. N. 2246 Kuz'menko, V. M.

Kirillov, I. V. 2267 Kuz'min, G. P.

Kirschner, I. 2102, 2355 Labes, M. M.

Kirschenbaum, J. 2227 Lamoise, A. M.

Kiss, G. Y. 2102 Langguth, K. G.

Klaassen, T. 0. 2175 Larsson, M.

Klaumunzer, S. 2165, 2177, 2197, 2208 Laszloffy, L.

Klein, E. 2124 Latysheva, V. I.

Klein, J. 2062 Lawson, A, C.

Klippert, T. E. 2285 Lazarev, V. G.

Knapp, G. S. 2020 Lazerev, B. G.

Knox, B. E. 2306 Lee, C. W.

Ko bayas hi, N. 2123, 2393, 2409 Leger, A.

Koch, C. C. 2001, 2337, 2377, 2378 Legvold, S.

Koepke, R. 2140 Lehman, M.

Kohler, H. J. 2308 Lekhtyar, I. Ya.

Kok, H. B. 2175 Levchenko, I. S.

Kokot, L. 2002, 2170 Levin, H.

Korostelin, A. A. 2109 Levinstein, H. J

Kovacs, I. 2102 Leyarovska, L.

Kramer, E. J. 2020 Leyarovski, E.

Krasnopyorov, E. 2170 Lindqvist, T.

Krasnoperov, E. P. 2130, 2268, 2322 Linker, G.

Kubiak, R. 2326

2112

2327

2331

I 2164;

2318;

1999, 21 32

I 2294;

2051, 2092

2106

2063, 2224

2015, 2160, 2296

2382

2313

2102;

2049

2287, 2403

2092

2051

2187

2062

2068, 2127;

2165

2106

2265

209S

2116, 2221

21 7C

21 7q

2313,

2143, 2382,

86
Lippmann, G. 2114 McConville, G. T.

Little, W. A. 2045 McLachlan, D. S.

Lo. K. 2179 McNiff, E. J. Jr.

Lohberg, R. 2262 Meek, R. L.

London, H. 2091 Meerschaut, A.

Lou, L. F. 2139, 2238 Mel'nikov, V. I.

Luders, K. 2193 Meunier, F.

Luengo, C. A. 2055, 2335, 2357, 2391, 2400, 2401 Meussner, R. A.

Luhman, T. S. 2108, 2190 Meyer, D.

Lug, H. L. 2395 Meyer, 0.

Lutes, 0. S. 2186 Meyer, S. F,

Lutz, H. 2117 Mikhalenkov, V. S

Lyneis, C. M. 2371 Mikheeva, M. N.

Lyon, M. 2110 Milai, A. K.

Mackliet, C. A. 2034 Milanowski, G. J.

Magnetic Measurement Group N anking 2099 Miller, D. L.

Makarov, V. I. 2101 Miller, J. F.

Makiej, B. 2103 Miller, L.

flankorntong, N. 2105 Minnigerode, G. V

Manuel, P. 2141 Misener, A. D.

Maple, M. B. 2006, 2055, 2120, 2154. 2167, 2196, Misroch, M. 2335, 2357, 2358, 2391, 2400

Missell, F. P. Marshall, B. J. 2217, 2251 Mitin, A. B. Massalski, T. B. 2278, 2279

Mitin, A. V. Masuda, K. 2016

Mizobuchi, A. Masuda, Y. 2333, 2360

Mizutani, U. Matsuo, S. 2064, 2278

Moehlecke, S. Matthias, B. T. 2006, 2316

2040, 2041, 2111, 2120, 2131 Moiseyev, D. P.

Matveeva, N. M. 2320 Molinie, P.

Mayerle, J. J. 2119 Monceau, P.

Mazaki, H. 2164 Moodenbaugh, A. R

Mazur, J. 2104, 2326 Moore, D. F.

McCallum, R. W. 2050,

2358,

2120,

2391 2154, 2196, 2357

2191

2185, 2349

2146, 2189

2214

2361

2051, 2092

2015

2280

2143

2382

2405

2049

2093

2329

2205

2218, 2220

2239, 2353

2250

2332

2091

2159

2222, 2303

2322

2320

2016

2278

2166, 2174, 2397

2269

2141, 2151, 2361

2176, 2361

2040, 2402

2135, 2246

87
Moore, E. L. 2223 Nikitin, V. P.

Morosin, B. 1266 Nikulin, E. I.

Morris, R. C. 2046, 2142 Nischenko, A. M.

Mortimer, M. J. 2337 Nisenoff, M.

Mota, A. C. 2070, 2147, 2401 Nishchenko, M. M. Motulevich, G. P. 2265 Nizhankovskii, V. I.

Moulton, W. 6. 2046, 2142, 2233 Noer, R. J.

Muhlratzer, A. 2137 Noguchi, S.

Muller, A. 2258 Noolandi, J.

Muller, J. 2035, 2061, 2138, 2257, 2404 Northrup, C. J. M. Jr

Muller, P. 2165, 2177, 2197, 2208 Noto, K.

Muller, W. H. -G. 2072 Novikov, V. I.

Muto, Y. 2123. 2344, 2393, 2409 Novoksenov, V. I.

Muzutani, U. 2279 O'Hara, S. G.

Mydlarz, T. 2170, 2322 Obermyer, R.

Mydosh, 0. A. 2288 Odoni, W.

Nabarra, F. R. N. 2185 Oesterreicher, H.

Nakatsuji, H. 2352, 2393 Ogasawara, T.

Namba, S. 2016 Ohsawa, A.

Narashimhan, S. L. 2014 Ohshima, K.

Nazarova, S. Z. 2094 Okaz, A. M.

Neal, W. E. J. 2105 Oliveira, N. J. Jr.

Nedellec, P. 2160 Onodera, Y.

Nembach, E. 2254 Orlov, A. F.

Neshpor, V. S. 2082 Ortiz, W. A.

Neumuller, H. 2165, 2197, 2208 Ostenson, J. E.

Neuringer, L. J. 2330 Ott, H. R.

Newkirk, L. R. 2260, 2284, 2397 Ovadyahu, Z.

Nichols, L. F. 2224 Pan, V. M.

Nickl, J. J. 2137 Pande, C. S.

Niculescu, D. 2207 Panova, G. Kh.

Nieuwenhuys, G. J.

2082

2084

2106

2032

2244

2317

2275

2064, 2278

2180

2229

2123, 2393, 2409

2082

2315

2217

2081

2011

2033. 2071, 2159

2374

2016

2294

2276

2222

2393

2329

2303

2068, 2127, 2215

2011, 2338, 2394

2248

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2330

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2155, 2156, 2239, 2353

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2019, 2028, 2245, 2309

2407

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93
NBS.114A (REV. n-77)

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PUBLICATION OR REPORT NO. NBS TN 983

2. Gov't Accession

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4. TITLE AND SUBTITLE

Properties of Selected Superconductive Materials

1978 Supplement

3. Recipient's Accession No.

Publication Date October 1978

6. Performing Organization Code

7. AUTHOR(S)

B. W. Roberts 8. Performing Organ. Report No.

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Superconductive Materials Data Center

General Electric Corporate Research

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