NBSIR 87-3563

Center for Electronics and

Electrical Engineering

Technical

Progress

Bulletin

Covering Center Programs,

July to September 1986 with

1987 CEEE Events Calendar

June 1987

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899

)C %

100

J56 /

^87-3563

[987

‘9
INTRODUCTION TO JUNE 1987 ISSUE OF THE CEEE TECHNICAL PROGRESS BULLETIN

This is the sixteenth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and Electrical Engineering. This issue of the CEEE Technical Progress Bulletin covers the

third quarter of calendar year 1986.

Organization of Bulletin : This issue contains abstracts for all Center papers re- leased for publication by NBS in the quarter and citations and abstracts for Center

papers published in the quarter. Entries are arranged by technical topic as identified in the table of contents and alphabetically by first author under each subheading within each topic. Unpublished papers appear under the subheading "Released for

Publication". Papers published in the quarter appear under the subheading "Recently

Published". Following each abstract is the name and telephone number of the individual to contact tor more information on the topic (usually the first author) . This

issue also includes a calendar of Center conferences and workshops planned for calendar year 1987 and a list of sponsors of the work.

Center for Electronics and Electrical Engineering : Center programs provide national

reference standards, measurement methods, supporting theory and data, and traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U. S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor Technology Program, carried out by the Semiconductor Electronics Division (formerly the

Semiconductor Materials and Processes and the Semiconductor Devices and Circuits

Divisions) in Gaithersburg, MD, and the Signals and Systems Metrology Program, car- ried out by the Electrosystems Division in Gaithersburg and the Electromagnetic

Fields and Electromagnetic Technology Divisions in Boulder, CO. Key contacts in the

Center are given on the back cover; readers are encouraged to contact any of these

individuals for further information. To request a subscription or for more

information on the Bulletin , write to CEEE Technical Progress Bulletin, National

Bureau of Standards, Metrology Building, Room B-358, Gaithersburg, MD 20899 or call

(301) 975-2220.

Center sponsors : The Center Programs are sponsored by the National Bureau of Standards and a number of other organizations, in both the Federal and private sectors;

these are identified on page 24.

Note on Publication Lists : Guides to earlier as well as recent work are the publication lists covering the work of each division. These lists are revised and reissued

on an approximately annual -basis and are available from the originating division.

The current set is identified in the Additional Information section, page 22.
ISalional Bureau of Standards

CEEE Technical Progress Bulletin - June 1987

TABLE OF CONTENTS

INTRODUCTION

Gaithersburg, Maryland 20899

dUpo

Page 1 Wl

inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM

Silicon Materials 2 Analysis Techniques 2 Dimensional Metrology 3 Integrated Circuit Test Structures 3 Device Physics and Modeling 4

Radiation Effects 6

Insulators and Interfaces 7

Other Semiconductor Topics 8

SIGNALS AND SYSTEMS METROLOGY PROGRAM

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 9

Waveform Metrology 9

Cryoelectronic Metrology 9

Antenna Metrology 10

Noise Metrology 11

Microwave and Mil lime ter-Wave Metrology 11

Optical Fiber Metrology 12

Electro-Optic Metrology 12

Complex Testing 13

Other Fast Signal Topics 13

ELECTRICAL SYSTEMS 14

Power Systems Metrology 14

Pulse Power Metrology 15

Superconductors 15

Magnetic Materials and Measurements 17

ELECTROMAGNETIC INTERFERENCE 18

Radiated Electromagnetic Interference 18

Conducted Electromagnetic Interference 21

ADDITIONAL INFORMATION 22

1987 CEEE CALENDAR 2 3

SPONSOR LIST 2 4

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 2 CEEE Technical Progress Bulletin - June 1 98 7 SEMICONDUCTOR TECHNOLOGY

Silicon Materials

Released for Publication

Hyland, S.L., Ast, P.G., and Baghdadi,

A . , Oxygen Measurements in Thin Ribbon Silicon, to be published in a Special Issue on Shaped Crystal Growth

of the Journal of Crystal Growth.

The oxygen content of thin silicon ribbons grown by the dendritic web technique was measured using a modification

of the ASTM method based on Fourier

transform infrared spectroscopy. Web

silicon was found to have a high oxygen

content, ranging from 13 to 19 ppma,

calculated using the new ASTM conversion

coefficient. The oxygen concentration

changed by about 10% along the growth

direction of the ribbon. In some sam- ples, a shoulder was detected on the

absorption peak associated with interstitial oxygen. A similar shoulder in

Czochralski grown material has been

variously interpreted in the literature

as due to a complex of silicon, oxygen,

and vacancies, or to a phase of Si0

2 developed along dislocations in the

material. In the case of web silicon,

it is not clear which is the correct

interpretation of this peak.

[Contact: Aslan Baghdadi, (301)

9 75-2062J

Thurber, W.R. , and Lowney, J.R., Methods for Accurate Determination of Emission Rate and Trap Concentration with

Application to Platinum-Doped Silicon.

A detailed analysis of junction capacitance was developed which allows one to

extract accurate values of emission rate

and trap concentration from isothermal

transient capacitance measurements.

Experiments were performed on silicon

diodes doped with platinum. The capacitance-ratio method of determining the

emission rate was used to remove the

nonexponentiali ty due to large trap

concentration from the capacitance

transients. Arrhenius plots of scaled

emission rate gave EA = 0.2271 ± 0.0002 eV for the platinum acceptor

level in n-type silicon, and E^ = 0.3215 ± 0.0012 eV for the platinum

donor level in p-type silicon. A new method for determining the trap concentration is derived and verified by use

of simulations and data. This method

involves the subtraction of capacitance

values obtained from two transients with

the same fill voltage, but different

reverse voltages. It is much simpler

than methods which require iterative

solutions of Poisson's equation and a priori knowledge of the trap energy.

[Contact: W. Robert Thurber, (301)

975-2067]

Analysis Techniques

Recently Published

Bullis, W.M., Watanabe, M., Baghdadi,

A., Yue-zhen, L. , Scace, R.I., Series,

R.W., and Stallhofer, P. , Calibration

of Infrared Absorption Measurements of

Interstitial Oxygen Concentration in

Silicon, Proceedings of the Silicon

Symposium, Boston, Massachusetts, May

4-9, 1986, p. 196.

Many calibration factors for infrared

absorption measurements of oxygen in

silicon have been reported in the literature and adopted as standard during the

past three decades. Reasons for this

variability are examined and a new international experiment to establish a universally acceptable value and the

reliability to which it can be found are

described.

[Contact: Aslan Baghdadi, (301) 975-

2062]

Wachnik, R.A., The Use of Charge Pumping to Characterize Generation by Interface Traps, IEEE Transactions on Electron Devices, Vol. ED-33, No. 7,

pp. 1054-1061 (July 1986).

A small rectangular pulse technique for

measuring the charge pumping current has

been proposed as a method to character-
CEEE Technical Progress Bulletin - June 1987 Page 3 Analysis Techniques (cont'd.

)

ize interface traps near mid-gap. It is

shown theoretically and experimentally

that the small rectangular pulse technique can be used to predict the surface

generation current measured on a metal

oxide-semiconductor field-effect transistor or a gated diode. This new technique has the advantage that the measured current is at least 10 to 100

times larger than the surface generation

current.

[Contact: Gary P. Carver, (301) 975-

2091 ] Dimensional Metrology

Recently Published

Postek, M.T., Electron Detection Modes

and Their Relation to Linewidth Measurement in the Scanning Electron Microscope, Proceedings of the 44th

Annual Meeting of the Electron Microscopy Society of America, Albuquerque,

New Mexico, August 10-15, 1986, pp.

646-649.

The basic premise underlying the use of

the scanning electron microscope for

linewidth measurement for semiconductor

research and production applications is

that the video image acquired, displayed, and ultimately measured reflects

accurately the structure of interest.

This paper demonstrates that depending

upon the mode of electron detection

(secondary, backscattered, or converted

backscattered secondary electrons) and

accelerating voltage used to image and

measure the structure of interest, a variety of results can be obtained. The

reasons for these differences are discussed relative to the coupling of this

type of work with electron beam/sample

interaction modeling to enable the ac- quisition of more precise linewidth

measurements.

[Contact: Michael T. Postek, (301)

975-2299]

Integrated Circuit Test Structures

Recently Published

Cresswell, M.W., Coleman, E.S., Pessall,

N., Linholm, L.W., and Radack, D.J. , An Expert System Approach to Enhanced

VLSI/VHSIC Process Development, to be

published in the Proceedings of the

Government Microcircuits Applications

Conference (GOMAC), San Diego, California, November 11-13, 1986.

This paper describes the use of an ex- pert system and specially designed microelectronic test structures for

assisting in the evaluation of a developmental submicron wafer fabrication

process. The method of compiling the

knowledge base is described and examples

of test structure parameter extraction

and automatic diagnostic characterization of the fabrication process are presented.

[Contact: Loren W. Linholm, (301)

975-2052]

Recently Published

Cresswell, M.W., Pessall, N. , Linholm,

L.W., and Radack, D.J., The Use of

Artificial Intelligence and Microelectronic Test Structures for Evaluation

and Yield Enhancement of Microelectronic Interconnect Systems, Proceedings

of the Third International IEEE Conference on VLSI Multilevel Interconnection, Santa Clara, California, June

9-1 1, 1 986, pp. 331-340.

A major factor limiting the production

and performance of high-density VLSI

integrated circuits is the fabrication

of reliable interconnect systems. Properly designed microelectronic test

structures and appropriate test methods

can be used to characterize the processes used to fabricate these systems.

However, the computer-controlled testing

of comprehensive process evaluation and

diagnosis structures often results in

large quantities of data which cannot be

readily or effectively interpreted by

the user. As a result, important features of the data are often overlooked

or not considered in the evaluation of

the fabrication processes. This paper

describes an expert system for assisting
Page 4 CEEE Technical Progress Bulletin - June 198 7 IC Test Structures (cont'd.

)

the user to interpret test results associated with fabricating selected aspects

of VLSI interconnect systems.

[Contact: Loren W. Linholm, (301)

975-2052]

Device Physics and Modeling

Released for Publication

Albers, J. , Semiconductor Measurement

Technology: Results of the Monte Carlo

Calculation of One- and Two-Dimensional

Distributions of Particles and Damage:

Ion Implanted Dopants in Silicon, to

be published as NBS Special Publication

400-79.

The TRansport of Ions in Matter (TRIM)

Monte Carlo code was used to calculate

the two-dimensional distributions of

particles, primary damage, and electronic and nuclear energy loss for implantation of a line beam source into silicon

targets. Approximate two-dimensional

distributions of the Frenkel pairs

(vacancy-interstitial) created by the

primary displacement damage of the target atoms were calculated by means of

the Kinchin-Pease equation. These particle, damage, and energy loss distributions allowed for the calculation of the

one-dimensional distributions of these

quantities for implantation into un- masked targets. A superposition technique was used to construct the twodimensional particle and approximate

Frenkel pair distributions for implantation past a mask edge. The energetic

ions used in the calculations were in

two groups: those used as intentional

dopants in silicon device fabrication

and those which either limited lifetime

or acted as gettering sites. The onedimensional particle distributions as well as the lateral particle profile at

maximum lateral penetration under the

mask edge were parameterized by means of

standard polynomial fitting techniques.

[Contact: John Albers, (301) 975-2075]

J. , Recent Improvements in

Radiometric Accuracy Based on New Detector Technology.

Until recently, the best accuracy

achievable in the measurement of radiometric properties was limited by the

accuracy of the ultimate radiometric

standard to which the measurement could

be traced. Since about 1980, however,

there have been such dramatic improvements in the accuracy of detector-based

standards that this is no longer the case. These new radiometric standards

are briefly reviewed in this paper, with

emphasis on the intercomparisons that

demonstrate their accuracy.

[Contact: Jon Geist, (301) 975-2066]

Marchiando, J.F., and Albers, J. , Effects of Ion-Implantation Damage on

Two-Dimensional Boron Diffusion in

Silicon.

Well-defined control of boron implanted

in silicon during a high-temperature

short-time anneal is important in calculation of shallow p-n junction profiles

in metal oxide-semiconductor fieldeffect transistors (MOSFETs). During an anneal, boron may exhibit enhanced diffusion lasting about a second. Here,

displacement damage is removed largely

by release and condensation of single

vacancies, which enhance the boron diffusion via the charged vacancy mechanism. Model 2-D distributions of boron

and displacement damage implanted near a mask edge are used to calculate the

redistribution of boron resulting from a seven-second anneal. Boron redistributes further into the bulk, while leaving the channel length unaffected. The

redistribution agrees favorably with

that reported in the literature.

[Contact: Jay F. Marchiando, (301)

975-2088]

Recently Published

Bennett, H.S., Band Structure and

Density of States Changes in Heavily

Doped Silicon, Journal of Applied

Physics, Vol. 59, No. 8, pp. 2837-2844

Geist ( April 1 5, 1 986) .
CEEE Technical Progress Bulletin - June 1987 Page 5 bipolar devices.

[Contact: Herbert S. Bennett, (301)

975-2079]

Device Physics and Modeling (cont'd.

)

The Klauder self -energy method is applied to calculating the effects of

one-body interactions among the dopant

ions and the carriers in heavily doped

silicon at 300 K. Many-body interactions of exchange energy for majority

carriers and of correlation energy for

minority carriers are estimated by interpretation of optical absorption measurements and by calculations based on degenerate theory. When densities ex- ceed 5 x 1

0

19 cm" 9

, one-body and manybody terms become of the same order of

magnitude and should be included in

calculations of band- s true ture changes

and of properties such as carrier transport which depend on the density of

s tates

.

[Contact: Herbert S. Bennett, (301)

975-2079]

Bennett, H.S., Device Physics for

Modeling GaAs Bipolar Transistors,

Proceedings of the Semiconductor

Research Corporation Conference on Bipolar Technology, Tempe, Arizona,

April 24-25, 1986, S. A. Abbas, Ed.,

Paper 11.17.

The accuracy and reliability of predictions from numerical simulations of

advanced bipolar transistors depend on model input parameters. These parameters include the variations with doping

and carrier concentrations in both

n-type and p-type material of 1) the

valence and conduction band edges, 2)

the effective intrinsic carrier concentrations, 3) the minority carrier mobilities, and 4) the minority carrier lifetimes. This paper contains a summary of

recent advances in device physics for

modeling silicon bipolar transistors

with submicrometer dimensions and high

concentrations of dopant ions and car- riers. It also contains preliminary

results in device physics for modeling

those regions of GaAs bipolar transistors which have high concentrations of

either dopant ions or carriers. The

latter results are based on lessons

learned from modeling advanced silicon

Bennett, H.S., Gaitan, M. , Roitman, P.

,

Russell, T. J. , and Suehle, J.S.,

Modeling MOS Capacitors to Extract

Si-SiC> 2 Interface Trap Densities in the

Presence of Arbitrary Silicon Doping

Profiles, IEEE Transactions on Electron Devices, Vol. ED-33, No. 6, pp.

759-765 (June 1 986)

.

The MOS capacitor model in SEDAN has

been modified to include the effects of

an energy-dependent Si-Si0 2 interface

trap density and arbitrary silicon substrate doping profiles. These modifications have been used to calculate the

quasi-static C-V characteristics of MOS

capacitors and to compare them with

those measured by the Kuhn technique for

as-received and for gamma-irradiated

p-well and n-type silicon MOS capacitors. The average substrate doping is

obtained from high-frequency C-V curves. For the n-type substrate, the dopant

redistribution was estimated with SUPREM

II. Experimental and theoretical C-V

curves were made to agree by varying the

voltage offset due to fixed oxide charge

and both the magnitude and the energy

distribution of interface trapped

charge. The distributions of interface

traps which gave the best fits between

experiment and theory have peaks near

mid gap for the p-well and n-type silicon MOS capacitors.

[Contact: Herbert S. Bennett, (301)

975-2079

]

Berning, D.W., and Blackburn, D.L.

,

Power MOSFET Failure During Turn-Off:

The Effect of Forward Biasing the

Drain-Source Diode, Conference Proceedings of the 1986 IEEE Industrial

Applications Society Annual Meeting,

Denver, Colorado, September 25-October

3, 1986, pp. 335-339.

The effects on the turn-off failure of

power metal oxide-semiconductor fieldeffect transistors ( MOSFETs ) which re- sult from forward biasing the intrinsic

drain-source diode immediately prior to
Page 6 CEEE Technical Progress Bulletin - June 1987

Device Physics and Modeling (cont'd.

)

turn-off are discussed. A nondestructive test circuit is used to measure the

turn-off characteristics of individual

devices under a variety of conditions.

It is shown that the drain voltage at

which the device fails decreases as either the diode forward current or the

reverse recovery current is increased.

If the diode is forward biased, the

voltage at failure can be less than

one-half of the voltage at which the

device fails if the diode has not been

forward biased (and often less than

one-half the manufacturer-rated voltage

capability for the device) . Also, if

turn-off of the MOSFET is attempted with

the diode conducting, the device loses

its fast turn-off capability due to

charge storage effects. A parallel

resonant power converter circuit is

employed to demonstrate how the intrinsic drain-source diode may and may not

be used safely in practical applications.

[Contact: David W. Berning, (301)

975-2069]

Radiation Effects

Released for Publication

Hefner, A.R., Blackburn, D.L. , and Galloway, K. F., The Effect of Neutrons

on the Characteristics of the Insulated

Gate Bipolar Transistor ( IGBT) , to be

published in the IEEE Transactions on

Nuclear Science.

The effects of neutrons on the operating

characteristics of Insulated Gate Bipolar Transistors (IGBT) are described.

Experimental results are presented for

devices that have been irradiated up to

a fluence of 10 13 neutrons/cm 2

, and an

analytical model is presented which

explains the observed effects. It is

found that with increasing neutron

fluence, the on-state voltage increases,

the switching time decreases, and the

saturation current decreases. For the

range of fluences studied, the observed

effects result from a reduction in

minority carrier lifetime in the IGBT

and not from changes in the effective

dopant density. The effects of neutrons

on the IGBT are compared with their

known effects on power MOSFETs, and it

is shown that the IGBT characteristics

begin to degrade at a fluence that is an

order of magnitude less than the fluence

at which the power MOSFET begins to

degrade. At high fluences, the IGBT

takes on the characteristics of a power

MOSFET.

[Contact: Allen R. Hefner, (301)

975-2071]

Russell, T.J. , Bennett, H.S., Gaitan,

M., Suehle, J.S., and Roitman, P.

,

Correlation Between CMOS Transistor and

Capacitor Measurements of Interface

Trap Spectra, to be published in IEEE

Transactions on Nuclear Science.

The radiation-induced change in the

energy spectra of SiC^-Si interface

traps as determined using 1 ) the chargepumping and weak-i nversion techniques on

CMOS transistors and 2) using the quasistatic capacitance-voltage and detailed

model techniques on complementary metal

oxide semiconductor (CMOS) capacitors

are compared. The interface trap spectra determined from these measurements

are in good quantitative agreement over

most of the band gap for the range of

densities of traps approximately 10 10 to

10 12 cm" 1 eV" 1. [Contact: Thomas J. Russell, (301)

975-2073]

Singh, G. , Galloway, K. F., and Russell,

T.J., Radiation-Induced Interface

Traps in Power MOSFETs, to be published in IEEE Transactions on Nuclear

Science.

Methods for estimating values of radiation-induced interface trapped charge

from the current-voltage (I-V) characteristics of metal oxide-semiconductor

field-effect transistors (MOSFETs) are described and applied to commercially

available power MOSFETs. The power

MOSFETS show severe degradation on radiation exposure with the effects of positive oxide trapped charge dominating;
CEEE Technical Progress Bulletin - June 1987 Page 7 Radiation Effects (cont'd.

)

however, interface trap buildup is significant. The results are compared to

experimental measurements available on other technologies.

[Contact: Thomas J. Russell, (301)

975-2073]

Insulators and Interfaces

Recently Published

Candela, G.A., Chandler-Horowitz , D.

,

Novotny, D.B., Vorburger, T. , and

Giauque, G.H., Film Thickness and

Refractive Index Standard Reference

Material Calibrated by Ellipsometry and

Profilometry , Proc. SPIE - The International Society for Optical Engineering, Vol. 661, pp. 402-407, SPIE, P.0.

Box 20, Bellingham, WA 98227 (1 986)

[conference Quebec, Canada, June 2-6,

1 986] .

A Standard Reference Material (SRM) has

been designed and fabricated, and will

be calibrated for thickness and refractive index using a highly accurate ellipsometer. The SRM consists of a three-inch diameter silicon wafer with a silicon dioxide film of uniform thickness. The design and preparation of the

SRM is discussed and the ellipsometric

measurement results and their comparisons with stylus profilometry are presented, along with an analysis of the

precision of the measurements. The

ellipsometric accuracy depends upon the

wafer oxide film, the model that represents the film-interface-substrate system, and the methods used to make the

measurements. Use of both correct sam- ple preparation and correct model is

important in order to obtain high accuracy for comparisons of optical thickness as determined by the ellipsometer

and mechanical thickness as determined

by the stylus prof ilome ter. This SRM

will be available initially in three

nominal oxide film thicknesses of 50,

1 00, and 200 nm. The SRM can be used to

calibrate many different optical and

mechanical thickness monitoring instruments as well as the ellipsometer for

which it was specifically designed.

[Contact: George A. Candela, (301)

975-2086]

Mazer, J.A., and Ehrstein, J.R., Effect of Sintering on the Sheet Resistance Directly Under an Aluminum/Silicon Ohmic Contact, Extended Abstracts

of the Electrochemical Society 169th

Meeting, Boston, Massachusetts, May

4-9, 1986, pp. 396-397.

Van der Pauw-type measurements with a specially designed test structure and

spreading resistance measurements indicate that the sheet resistance directly

under a sintered 1% Si-Al/Si ohmic con- tact is lower than the sheet resistance

of the diffused layer away from the

contact. These results agree with

transmission-line calculations made with

measurements from six-terminal Kelvin

test structures, and allow an improved

calculation of the circuit-loading (or

front-contact) resistance.

[Contact: James R. Ehrstein, (301)

975-2060]

Mountain, D. J. , Russell, T.J. , and Galloway, K. F., Effect of Post-Oxidation

Anneal on Electrical Characterization

of Thin Oxides, Extended Abstracts of

the Electrochemical Society 169th

Meeting, Boston, Massachusetts, May

4-9, 1986, pp. 382-383.

The effect of pre- and post-oxidation

treatments on thin oxide electrical

characteristics was examined. Pre-oxidation clean and post-oxidation anneal

(POA) times and ambients were varied.

Three POA times and two gases (argon and

nitrogen) were compared. Flatband voltages, oxide breakdown fields, and interface trap densities were measured for

thin (20-nm) oxides. Interface trap

densities were measured using the

charge-pumping technique. Data indicate

an optimum process can be designed. A

sacrificial oxidation cleaning sequence

and a long (120-min) POA in nitrogen

gave the oxide with the best electrical

characteristics.
Page 8 CEEE Technical Progress Bulletin - June 1 987

Insulators and Interfaces (cont'd.

)

[Contact: Thomas J. Russell, (301) 975-

2073]

Other Semiconductor Topics

Released for Publication

Bouldin, C.E., Forman, R.A., Bell, M.I.,

Donovan, E.P., and Hubler, G.K.,

EXAFS Measurements of Ion and Implanted

Amorphous Surface Layers.

Extended x-ray-absorption fine-structure

(EXAFS) measurements of ion-damaged

amorphous Ge (a-Ge) show that low- temperature annealing causes a structural

relaxation in the as-implanted a-Ge. It

is found that there is a sharpening of

the first shell in the radial distribution but no change occurs in the firstshell distance or coordination number.

No higher shells in the radial distribution are observed either before or after

annealing, indicating that these shells

remain highly disordered. The observed

structural relaxation is an amorphousamorphous transition; no nucleation of

microcrystals takes place. EXAFS measurements are made using conversion

electron detection, which is essentially

total electron yield detection in ambient conditions, allowing the EXAFS measurements to be near-surface sensitive

with a sampling depth of 600 to 800 A.

[Contact: Charles E. Bouldin, (301)

975-2946]

Novotny, D.B., Measurement of the

Separation Distance in Contact and

Proximity Lithography, to be published in the Journal of the Electrochemical Society.

A method is presented for measuring the

separation distance between the substrate surface and the mask surface in

contact and proximity optical lithography. This method utilizes the analysis of the Fresnel diffraction pattern

produced by a slit aperture in the mask

and physically replicated in the photoresist. From the analysis, the image

distance producing the observed Fresnel

diffraction pattern is obtained and is

used to calculate the separation distance. The conditions for the application of this method are presented and an easy method for computer-generation of

the Fresnel diffraction patterns is

described. A simplified method for

estimating the separation distance from

the number of diffraction pattern peaks

and valleys is also given. Results are

presented showing that a finite separation distance may exist in hard "contact" lithography and that this measurement method is applicable from distances

from near zero to 20 or more micrometers.

[Contact: Donald B. Novotny, (301)

975-2699]

Recently Published

Dodge, M., Refractive Index, CRC

Handbook of Laser Science and Technology, Vol. IV, Optical Materials: Part

2, M. J. Weber, Ed. (CRC Press, Boca

Raton, Florida, 1986), pp. 21-47.

This section defines refractive index,

gives the general form of the Cauchy,

Sellmeier, and Hertzberger dispersion

equations, and discusses the environmental factors that must be considered in

the determination and use of refractive

index values for a particular material.

Tables are included that give the re- fractive index and the temperature coefficient of refractive index for crystals

that are of particular interest for the

fabrication of optical components to be

used in laser systems.

Dispersion equations and equation parameters are also given for some of the

materials

.

[Contact: Marilyn Dodge, (301)

975-2386]

Ma, Y. , Stern, E.A., and Bouldin, C.E.,

The Structural Unit in Icosahedral

MnAlSi and MnAl , Physics Review

Letters, Vol. 57, No. 13, pp. 1611-1614

(Sept. 29, 1986).

Extended x-ray-absorption fine-structure
CEEE Technical Progress Bulletin - June 1987 Page 9

Other Semiconductor Topics

measurements were made on icosahedral

MnAl and MnSiAl, and on the periodic

standards a-phase of MnSiAl and orthorhombic phase of MnAl ^ . Experimental

evidence is presented that a cage of Mn

atoms at the vertices of an icosahedron

is the structural unit in the icosahedral MnSiAl and MnAl phases. The connections among these icosahedral units and

between them and the A1 atoms are different in the icosahedral phases and in

the a-phase. As in the a-phase, the Mn

icosahedra do not share vertices in the

icosahedral phases; i.e., they are

separated from one another. It is suggested that the i-phase grows by randomly nucleating together Mn icosahedra

along their 20 threefold directions, as allowed by local steric constraints.

[Contact: Charles E. Bouldin, (301)

975-2046]

FAST SIGNAL ACQUISITION, PROCESSING, &

TRANSMISSION

Waveform Metrology

Released for Publication

Schoenwe tter, H.K. , Design and Characterization of a Programmable Step Generator with Very Fast Settling Performance, Summary to be published in

CPEM 86 Digest, 1986 Conference on Precision Electromagnetic Measurements,

N BS , Gaithersburg, Maryland, June

23-27, 1986. Full-length versions of

papers presented at CPEM 86 are to be

published in a special (CPEM 86 Proceedings) issue of the IEEE Transactions on Instrumentation and Measurement.

A pulse generator for testing the stepresponse of waveform recorders is described. The initial and final levels

of voltage steps are each programmable

within the range of ±1 V for a 50-Q

termination. Voltage steps within this

range settle to within ±0.2% and ±0.1%

of full-scale range (FSR) in approximately 4 ns and 6 ns, respectively. The

10 to 90% transition duration (TR ) i s approximately 1.7 ns. [Contact: Howard K. Schoenwe tter, (301)

975-2414]

Souders, T.M., and Flach, D.R., Accurate Frequency Response Determinations

from Discrete Step Response Data.

An approach is presented for quickly

obtaining the complex frequency response

of a system from sampled step response

data. Digital signal processing techniques are used extensively. An analysis of errors resulting from sampling,

quantization, first differencing, and

record length is included.

[Contact: T. Michael Souders, (301)

975-2406]

Cryoelectronic Metrology

Released for Publication

Kautz, R.L. , Global Stability of Phase

Lock Near Chaotic Crisis in the RFBiased Josephson Junction.

The global stability of phase lock in

the radio-frequency-biased Josephson

junction is studied through digital

simulations. Global stability is determined by calculating the lifetime of the

phase-locked state in the presence of

thermal noise. This lifetime, the mean

time required for thermal noise to induce a 2ir phase slip, increases exponentially with inverse temperature in the

limit of low temperatures, and the lowtemperature asymptote can be parameterized in terms of an activation energy e and an attempt time tq . The activation energy is a useful measure of

global stability for both periodic and

chaotic phase-locked states. The

behavior of e and t q is studied over a range of critical current densities

which take the system from a region of

harmonic motion through a perioddoubling cascade and into a region of

phase-locked chaotic behavior which is

ended by a chaotic crisis. At the

crisis point, the activation energy goes

to zero and the attempt time goes to
Page 1

0

CEEE Technical Progress Bulletin - June 1987

Cryoelec tronic Metrology (cont'd.

)

infinity. The results are used to

determine the optimum critical current

density for series-array voltage

s tandards

.

[Contact: Richard L. Kautz, (303)

497-3391 or -3988]

Raisanen, A.V. , Crete, D.G. , Richards,

P.L. , and Lloyd, F.L. , Low Noise SIS

Mixer with Gain for 80-115 GHz.

Several superconductor-insulatorsuperconductor (SIS) quasiparticle

mixers have been designed and tested for

the frequency range from 80 to 115 GHz.

The sliding backshort is the only

adjustable radio-frequency (rf) tuning

element, simplifying optimization of

mixer performance compared to designs

previously described in the literature

of radio astronomy receivers. The rf

filter reactance is used as a fixed

rf-matching element. A mixer which uses

a single 2x2 pirn 2 Pb-alloy junction in

a 1/4-height waveguide mount has a coupled conversion gain of Gm(DSB) = 2.6 ± 0.5 dB with an associated noise

temperature of Tm (dsb) = 16.4 ± 1.8 K

at the best double-sideband (DSB)

operation point. The receiver noise

temperature TR (DSB) is 27.5 ± 0.8 K. This mixer provides single-sideband

(SSB) receiver noise temperatures below

50 K over the frequency range from 91 to

96 GHz, the minimum being TR (SSB) = 44

± 4 K. These SSB values are calculated

from the DSB measurements.

[Contact: Frances L. Lloyd, (303)

497-3254 or -3988]

Recently Published

Hamilton, C.A., Kautz, R.L., and Lloyd,

F.L., The NBS Josephson Array voltage

Standard, CP EM 86 Digest, 1986 Conference on Precision Electromagnetic

Measurements, Gaithersburg, Maryland,

June 23-27, 1986, pp. 108-109.

It has been realized for many years that

the accuracy of Josephson voltage standards can be substantially improved by

using many junctions in series to generate a large voltage. A simple series

extension of the single junction standard requires individual control of the

bias current, for example, for each

junction of 100 mV using 20 junctions.

In 1977 Levinsen et al. suggested a method to avoid the multiple bias

problem by using constant-voltage steps

which cross the zero-current axis of the

plot of junction current as a function

of voltage (I-V curve). This allows a large array of junctions to share a common current bias at or near zero. With an array of 1000 or more junctions,

a quantized voltage of 1 V is possible.

After nearly ten years of effort, the

problems of fabrication, stability, and

r adio-f requency energy distribution are largely solved and Josephson standards

at the 1 -V level are a reality. This

paper reviews the design and operation

of series array voltage standards and

describes the efforts at NBS to engineer

a versatile, reliable, and easily used

voltage standard system.

[Contact: Clark A. Hamilton, (303)

497-3740]

Antenna Metrology

Released for Publication

Baird, R.C., Daywitt, W.C., Newell,

A.C., Perera, S., Repjar, A.G. , Wait,

D.F., and Estin, A.J., Calibration

Requirements for EHF Satellite Communication Systems, to be published as NBS IR 86-3058.

The calibration and measurement support

requirements of mil lime ter-wave satellite systems such as MILSTAR have been

investigated. Needs for measurements on

satellite systems are reviewed. An

overview of the various means available

for calibrating antenna gain, one of the

key parameters that need to be measured

accurately, is presented. Essentially

three new measurement problems arise

because of operating in the upper superhigh frequency (3 to 30 GHz) and ex- tremely high frequency (EHF, 30 GHz to

quasi-optical) ranges. First, without
CEEE Technical Progress Bulletin - June 1987 Page 1

1

Antenna Metrology (cont'd.

)

adequate methods to measure the atmospheric loss, the accuracy of effective

isotropic radiated power (EIRP) measurements in the 20 to 45 GHz range can be

no better than 0.5 dB to 3 dB (depending

on frequency and antenna elevation

angle) , which is inadequate for MILSTAR

requirements. Second, standards and

measurement support services are not

presently available from the National

Bureau of Standards and are needed to

support mi 1 lime ter-wave antenna gain and

thermal noise measurements. Third, if

the sun and/or moon are to be used as a basis for measuring the earth terminal

figure of merit G/T, earth terminal

antenna gain, or satellite EIRP in the

millimeter region, we need appropriate

characterization of these sources in

that region.

[Contact: Ramon C. Baird, (303)

497-3301

]

Noise Metrology

Recently Published

Daywitt, W.C., 10-60 GHz G/T, Measurements Using the Sun as a Source—

A

Preliminary Study, NBSIR 86-3046

(April 1 986)

.

Preliminary studies show that it may be

possible 1 ) to determine the solar flux

density incident on the earth's atmosphere using a simple algorithm with an uncertainty less than 8 percent, 2) to

overcome a deteriorating accuracy in

atmospheric loss calculations by using a "tipping curve" measurement, and 3) to

reduce starshape correction factor un- certainty by using an equivalent solar

diameter.

[Contact: William C. Daywitt, (303)

497-3720]

Microwave and Millimeter-Wave Metrology

Released for Publication

Daywitt, W.C., A Simple Technique for

Investigating Defects in Coaxial Connectors .

A technique being studied that uses swept-f requency automatic network ana- lyzer (ANA) data for investigating electrical defects in coaxial connectors is

described. The technique is useful to

connector and ANA manufacturers and to

engineers interested in determining

connector characteristics for error

analyses. A simplified theory is presented, and the technique illustrated by

applying it to perturbations caused by

the center conductor gap in a 7-mm connector pair.

[Contact: William C. Daywitt, (303)

497-3720]

Engen, G.F., In Search of a More

Realistic Accuracy Statement for Microwave Metrology.

The concept of "measurement accuracy" is

fundamental to all of metrology. Given

two different techniques for measuring

the same parameter, an evaluation of

their respective accuracies typically

plays a major role in an assessment of

their relative merit.

Historically, the accuracy achieved by

the microwave metrologist has been limited by detector performance, hardware

imperfections, and connector problems.

Today, the effect of hardware imperfections has been largely eliminated by

more complete modeling. Moreover, the

performance of the detection systems has

been improved to the point where, in

many cases, the nonideal behavior of

connectors is the major error source. Although important refinements in con- nectors have also been realized, it is

quite possible that these have not kept

pace with the other developments.

In any case, it is useful to pose the

following question: Assume a measurement system which, apart from being

fitted with connectors typical of those

in general use, is otherwise perfect.

How much measurement accuracy can one realistically claim for it?

[Contact: Cletus A. Hoer, (303)

497-3705]
Page 1

2

CEEE Technical Progress Bulletin - June 1987

Microwave & Millimeter-Wave (cont'd.)

Juroshek, J.R., A Study Into Measurements of Connector Repeatability Using

Highly Reflecting Loads.

This paper investigates the repeatability of measurements of reflection coefficient, T, of highly reflecting devices

with changes in the radio-f requency (rf)

connector joint. In this analysis, the

changes in the connector joint are due

to the disconnecting and reconnecting of

the connector pair. It is shown that

many of the measurement discrepancies

observed in actual practice can be ex- plained with a simple connector model.

The paper shows that the sensitivity of

measuring rf connector changes can be

enhanced by using highly reflecting

loads. The changes in T due to changes

in resistance or reactance can be four

times greater for highly reflecting

devices (Jr|-1J, as compared to nonreflecting devices (|r|-0). Experiments

on two devices with 14-mm connectors are

described, to compare with theory. The

basic principles described in this paper

should be beneficial to designers of

connectors who need to detect small

changes in connector parameters, and to

designers of calibration standards who

need to be concerned with small connector imperfections that contribute a major part of the measurement uncertainty.

[Contact: John R. Juroshek, (303)

497-5362]

Optical Fiber Metrology

Released for Publication

Day, G.W., and Franzen, D.L. , Editors,

Technical Digest, Symposium on Optical

Fiber Measurements, 1986.

This digest contains summaries of 34

papers presented at the Symposium on

Optical Fiber Measurements, held

September 9-10, 1986 at the National

Bureau of Standards, Boulder, Colorado.

[Contact: Gordon W. Day, (303)

497-5204]

Recently Published

Day, G.W., and Etzel, S.M., Annealing

of Bend-Induced Birefringence in Fiber

Current Sensors, Technical Digest of

the 5th International Conference on Integrated Optics and Optical Fiber

Communication, Venice, Italy, October

1-4, 1985, pp. 871-874.

The bend-induced linear birefringence in

coils of single-mode optical fiber has

been greatly reduced by annealing. This

should allow the construction of electric current sensors that are much more

compact and potentially more sensitive

than previously possible.

[Contact: Gordon W. Day, (303)

497-5204]

Yang, S., and Gallawa, R.L., A Comparison of Three Bandwidth Measurement

Techniques for Multimode Optical

Fibers, IEEE Transactions on Instrumentation and Measurement, Vol. IM-35,

No. 2, pp. 187-194 (June 1986).

This paper presents the results of an

experiment to compare three distinct

methods of measuring the bandwidth of a telecommunication-grade, multimode optical fiber. The three methods are: 1)

the time-domain method, 2) the frequency-domain method, and 3) the pulse spectrum analysis method. We find good

agreement between the frequency- domain

method and the pulse spectrum analysis

method, but the time-domain method

yields results that are lower than the

other two for the cases we considered.

[Contact: Robert L. Gallawa, (303)

497-3761 ] Electro-Optic Metrology

Recently Published

Young, M., Low-Cost LCD Video Display

for Optical Processing, Applied Optics, Vol. 25, No. 7, pp. 1024-1 026

(April 1 , 1986).

In this paper, I show that a liquid gate

and low-pass filter are needed to use a
CEEE Technical Progress Bulletin - June 1987 Page 1

3

Electro-Optic Metrology (cont'd.

)

new LCD video monitor effectively in a coherent-processing system, and I demonstrate the results of some simple

spatial-filtering experiments.

[Contact: Matt Young, (303) 497-3223,

-5342]

Complex Testing

Released for Publication

Stenbakken, G.N., and Souders, T.M.,

Test Point Selection and Testability

Measures Via QR Factorization of Linear

Models, paper given at the 29th Midwest Symposium on Circuits and Systems,

Lincoln, Nebraska, August 1 0-1 2, 1986;

to be published in IEEE Transactions on

Instrumentation and Measurement.

An efficient algorithm is presented for

selecting test points for use in applications such as calibration and fault

diagnosis of electronic networks. The

algorithm, based on factorization of the

circuit sensitivity matrix by a technique known as QR factorization, minimizes the prediction or estimation er- rors which result from random measurement error. A definition of testability

based on the concept of minimum estimation error is also introduced. Practical examples are given.

[Contact: Gerard N. Stenbakken, (301)

975-2440]

Other Fast Signal Topics

Recently Published

Cromar, M.W., Clark, A.F., and Fickett,

F.R., Flux Limit of Cosmic-Ray Magnetic Monopoles From a Multiply Discriminating Superconductive Detector, Physical Review Letters, Vol.

56, No. 24, pp. 2561-2563 (June 16,

1 986) . A multiply discriminating, three-loop

superconducting monopole detector was operated for one year. During this

period, 8523 hours of data were accumulated. The sensing area averaged over

solid angle for trajectories passing

through a loop was 178 cm2

. Including

double coincidence events from trajectories passing through the shield but

not through a loop, the total sensing

area averaged over solid angle was 1195 cm2

. No candidate monopole events were

observed, leading to an upper limit on

the flux of cosmic ray magnetic monopoles of 5.0 x 10~ 12 cm-2 sr 1 s~ 1 with

a 90% confidence level.

[Contact: Michael W. Cromar, (303)

497-5375]

Duffield, C.L., Moreland, J. , and

Fickett, F.R., Problems with Cryogenic Operation of Piezoelectric Bending Elements, Review of Scientific

Instruments, Vol. 57, pp. 990-992 (May

1986)

.

Piezoelectric bimorphs constructed from

lead titanate-zirconate (PZT) ceramic

bonded to a brass sheet have been tested

at cryogenic temperatures to determine

their suitability for use in a lowtemperature micropositioner. Experimental data are presented on bimorph sensitivity (displacement per volt) as a function of the number of temperature

cycles. Results indicate that bimorphs

of this type cannot be calibrated

because of irreversible changes in the

bending characteristics that occur while

cycling from room temperature to 4 K.

[Contact: John Moreland, (303)

497-3641]

Young, M., Scratch-and-Dig Standard

Revisited, Applied Optics, Vol. 25,

No. 12, pp. 1922-1928 (June 15, 1986).

The scratch standard (MIL-0-1 3830A) is a cosmetic standard that is effected by a visual comparison with a set of secondary standards that are in turn evaluated by comparison with a set of master

standards. Both manufacture and certification of the secondary standards are

somewhat unreliable. This paper shows

that they can be classified according to

the relative power scattered at a relatively small angle and describes experiments with etched gratings that have the
Page 1

4

CEEE Technical Progress Bulletin - June 198 7 Other Fast Signal Topics (cont'd.

)

appearance of scratches but diffract

light into a broad peak between 5 and 10

degrees oft the axis of the incident

beam. Some prototypes have been classified both by comparison with the master

standards and by a photoelectric measurement; agreement between the two

methods is good. Such gratings, used as the secondary standards, should display

less intersample variation than scribed

or other artifacts. The paper concludes

by presenting evidence that the original

primary standards have been stable over

a long time.

[Contact: Matt Young, (303) 497-3223,

-5342]

ELECTRICAL SYSTEMS

Power Systems Metrology

Released for Publication

Fenimore, C., The Artificial Boundary

Integral Method (ABIM) : Flow Into an

Aperture.

Using a boundary integral, one may approximate certain irrotational, effectively incompressible, steady flows into

an aperture. Here, a three-dimensional

flow is estimated with a small computation. The flow boundary is a plane wall

with an opening. The artificial boundary is the hole on which the outflow is

an unknown function of position; the

outflow may be approximated from measurements by a deconvolution. Three

spaces of computational elements are considered and evaluated. The domain of

the flow is the upper half-space in the

upstream region for which the Green's

function is known. The flow is approximated by reconvolution. This investigation was stimulated by the need to characterize the airflow into an ion

counter.

[Contact: Ronald B. McKnight, (301)

975-2428]

Kelley, E.F., and Hebner, R.E., Electro-Optic Field Measurement at a Needle

Tip and Streamer Initiation in Nitrobenzene, to be published in the Conference Record of the 1 986 Conference

on Electrical Insulation and Dielectric

Phenomena, Wilmington, Delaware, November 2-6, 1 986.

Kerr-effect electro-optic observations

of the impulse field are made in the

vicinity of the tip of a needle-sphere

electrode geometry. Distortions from

the Laplacian field indicate charge

injection from the tip along a narrow

channel prior to streamer initiation.

Estimates reveal that charge densities

on the order of 100 yC/cm^ exist in the

channel. An order of magnitude calculation suggests that sufficient energy is

deposited in the channel to cause vaporization of the liquid due to joule heating. The streamer will initiate where

the charge injection channel touches the

e lec trode.

[Contact: Edward F. Kelley, (301)

975-2424]

Oldham, N.M., Laug, O.B., and Waltrip,

B.C., Digitally-Synthesized Power

Calibration Source, Summary to be

published in CPEM 86 Digest, 1986 Conference on Precision Electromagnetic

Measurements, NBS , Gaithersburg, Maryland, June 23-27, 1986. Full-length

versions of papers presented at CPEM 86

are to be published in a special (CPEM

86 Proceedings) issue of the IEEE

Transactions on Instrumentation and

Measurement.

A digitally synthesized source of "phantom" power for calibrating electrical

power and energy meters is described.

Independent sources of voltage, current,

and phase angle are programmable between

0 and 240 V, 0 and 5 A, and 0 and 360

deg, respectively. The accuracy of the

active and reactive power is estimated

to be within ±100 ppm of the full scale

apparent power (volt-amperes).

[Contact: N. Michael Oldham, (301 ) 975-2408]

Petersons, 0. , and Mehta, S.P., An

Active High Voltage Divider and Phase
CEEE Technical Progress Bulletin - June 1987 Page 1

5

Power Systems Metrology (cont'd. ) Shifter, Summary to be published in

CP EM 86 Digest, 1986 Conference on Precision Electromagnetic Measurements,

NBS, Gaithersburg, Maryland, June

23-27, 1986. Full-length versions of

papers presented at CPEM 86 are to be

published in a special (CPEM 86

Proceedings) issue of the IEEE

Transactions on Instrumentation and

Measurement.

An instrument combining an active highvoltage divider and a phase shifter

designed to yield small phase angle

uncertainties within 20 microradians is

described. It is based on a circuit

employing a feedback amplifier and a controlled source. The presence of the

controlled source greatly reduces the

potential of dynamic instabilities of

the feedback loop and essentially eliminates the errors associated with the

finite gain of the amplifier. Design

and construction details and test re- sults of accuracy evaluation are presented.

[Contact: Oskars Petersons, (301)

975-2400]

Van Brunt, R.J. , Common Parameterizations of Electron Transport, Collision

Cross Section, and Dielectric Strength

Data for Binary Gas Mixtures.

Previously used parameterizations of

dielectric strengths (electrical breakdown data) for gas mixtures in terms of

electron collision and transport parameters are reviewed. A new method of

fitting experimental data on dielectric

strengths for binary electronegative gas

mixtures is proposed based upon the

principal assumption that the electron

kinetic energy distributions in the gas

are maxwellian. The method provides

physical insight into such behavior as pressure-dependent or pressure-independent synergisms, and is useful in checking the consistency between dielectric

strength data and available information

on electron transport and ionization,

attachment, and momentum- transfer collision cross sections. The method is

applied here to the mixtures SF

6 /N

2

, CC£

2 F2 /N2

, and SF /CCJl^.

[Contact: Richard J. Van Brunt, (301)

975-2425]

Recently Published

McKnight, R.H. , Discussion of Paper 85

WM 1

1

5-1 , "A Fast Response Impulse

Voltage Measuring System for Testing of

Gas Insulated Substations Equipment,

IEEE Transactions on Power Delivery,

PWRD-1, No. 3, p. 47 (July 1986).

This is a discussion of a technical

paper presented at the winter meeting of

the Power Engineering Society, IEEE. It

questions some of the author's assumptions and references further applications of the measurement method described.

[Contact: Ronald H. McKnight, (301)

975-2431]

Pulse Power Metrology

Recently Published

McKnight, R.H., Fenimore, C., and

Lagnese, J. , The Use of Deconvolution

Methods in Characterizing Electrical

Sensors, Proceedings of the Fifth

IEEE Pulsed Power Conference, Crystal

City, Virginia, June 10-12, 1985

(published by Institute of Electrical

and Electronic Engineers, Inc. , 345

East 47th Street, New York, NY 10017,

May 1986), pp. 1 76-178.

Deconvolution methods have been applied

to measurements made with different

electrical sensors including resistive

and capacitive dividers. Deconvolved

and directly measured waveforms have

been compared with good results.

[Contact: Ronald H. McKnight, (301)

975-3431]

Superconduc tors

Released for Publication

Benson, R.G., Goldfarb, R.B., and
Page 1

6

CEEE Technical Progress Bulletin - June 1987

Superconduc tors (cont'd.)

Pittmann, E.S., Quench Circuit for

Electronic Instruments Used with

Superconducting Magnets.

A multifunction circuit is described

that protects instruments connected or

coupled to a superconducting magnet in

the event of a quench (reversion from

superconducting) to normal state on the

part of the magnet)

.

[Contact: Ronald B. Goldfarb, (303)

497-3650]

Ekin, J.W., Effect of Irregularity in

Filament Cross Sectional Area ("Sausaging") on Electric-Field Vs. Current

Characteristics of NbTi Superconductors.

Measurements of a correlation between

filament irregularity ( "sausaging" ) , and

the shape of a superconductor's

electric-field-versus-current (E-I ) characteristic are reported. The shape

of the E-I characteristic is quantified

in terms of the resistive transition

parameter n, defined by Ecxln . Low

values of n indicate significant filament irregularity. It is proposed that

the parameter n could be used as a valuable index of filament quality in evaluating different superconductors for

practical applications. A model is also

suggested to explain this effect in

terms of a locally depressed filament

critical-current density, which forces

current to transfer across the normalmatrix material into neighboring filaments.

Also reported is the relationship

between n and the statistical distribution of filament diameters measured for

the NbTi superconductors studied. This

relationship may be useful as a quick

method of estimating the extent of saus- aging in practical multifilamentary NbTi

superconductors from measurements of n. [Contact: John W. Ekin, (303)

497-5448]

Recently Published

Dube, W.P., and Goodrich, L.F., Quench

Detector Circuit for Superconductor

Testing, Review of Scientific Instruments, Vol. 57, No. 4, pp. 680-682

(April 1 986)

.

A quench detector is a device that interrupts the flow of current through a superconductor in the event the superconductor reverts to the normal, resistive state. This new design has adjustable filtering and sensitivity. The

input is well isolated from the output,

eliminating any possible ground loop

through the detector. It also has ex- cellent noise immunity.

[Contact: Loren F. Goodrich, (303)

497-3143]

Fickett, F.R., Research on Practical

Superconductors at NBS, ATB Metallurgie, Vol. 25, No. 4 (Proceedings of

the Benelux Metallurgy Conference on Superconductors, Brussels, Belgium, May

8-9, 1985), pp. 265-271.

The National Bureau of Standards is

engaged in a number of research programs

which have as their goals the evaluation

of various properties of practical

superconductors related to their application in large-magnetic systems. The

ability to have standard data, standard

tests, and standard materials for evaluating the primary properties of superconductors and related measurement systems is essential if international com- merce in these complicated conductors is

to develop and grow. The NBS work has

concentrated on measurement of critical

current, critical field, ac losses, and

properties of the copper normally used

as a stabilizing material. Many parameters must be considered in these investigations. An overview of these re- search efforts and a selection of recent

results are presented. Particular em- phasis is given to work performed in

cooperation with the International Copper Research Association (INCRA) on properties of oxygen-free copper.

[Contact: Frederick R. Fickett, (303)

497-3785]

Moreland, J. , Ekin, J.W., and Goodrich,
CEEE Technical Progress Bulletin - June 1987 Page 1

7

Superconduc tors (cont'd.

)

L . F . , Electron Tunneling into Superconducting Filaments: Depth Profiling

the Energy Gap of NbTi Filaments in

High-Field Magnet Wires, Advances in

Cryogenic Engineering Materials, Vol.

32, R. P. Reed and A. F. Clark, Eds.

(Plenum Publishing Corporation, New

York, NY, 1986), pp. 1101-1108.

Squeezable electron tunneling (SET)

junctions consisting of superconducting

NbTi filaments (extracted from magnet

wires) and sputtered Nb thin-film counter electrodes were used to determine

the energy gap at the surface of the

filaments. The current versus voltage

curves of junctions immersed in liquid

helium at 4 K were measured for a series

of filaments taken from the same wire.

Each filament had been etched to remove

a surface layer of varying thickness so that the energy gap could be determined

as a function of depth into the surface

of an average filament. It was found

that some manufacturing processes yield

filaments having surface layers with

reduced energy gaps of 0.4 meV compared

to measured interior bulk values ranging

from 1.2 to 1.3 meV.

[Contact: John Moreland, (3 03)

497-3641]

Magnetic Materials and Measurements

Released for Publication

Capobianco, T.E., Field Mapping and

Performance Characterization of Commercial Eddy Current Probes.

Variations in the sensitivity of commercial eddy current probes are common, and

this fact can cause reliability problems

for those using eddy current inspection

techniques. The National Bureau of

Standards is conducting research to

characterize eddy current probe performance. We have developed a unique capability to map the near magnetic field of

these probes; results are presented

comparing field maps to measurements of

electrical and other performance parameters. We show that the magnetic field

intensity per unit of excitation current

has a direct relationship to the

strength of the probe response to a simulated defect (for this study, electrical-discharge-machined notches) when

corrections for probe/coil misalignments

are made. Performance tests are re- ported which can account for coil misalignments as well as other factors

affecting the strength of the defect

response. The inclusion of these tests

in a proposed military standard for eddy

current probe characterization is also

discussed.

[Contact: Thomas E. Capobianco, (303)

497-3141]

Capobianco, T.E., and Yu, K. , The

Effect of Pickup Coil Spacing on Differential Eddy Current Probe Sensitivity.

We report the results of an experiment

investigating the effect of pickup coil

spacing on differential probe sensitivity. The probe configuration for these

experiments consists of an air-core

excitation coil surrounding two air-core

pickup coils. All three coils have

vertical axes with respect to the flat

plate test piece. Measurements were

taken for three different pickup coil

spacings on an aluminum test piece with

four electrical discharge machined

notches. The effect of pickup coil

unbalance on probe response is also

r eported.

[Contact: Thomas E. Capobianco, (303)

497-31 41]

Goldfarb, R.B., and Bussey, H.E.,

Method for Measuring Complex Permeability at Radio Frequencies.

An established method for measuring

complex radio-frequency permeability is

based on the change in inductance and

resistance of a coaxial transmission

line upon insertion of a sample toroid.

It is not necessary to wind coils on the

toroid or to correct for geometric demagnetization factors. The use of

modern commercial impedance analyzers.
Page 1

8

CEEE Technical Progress Bulletin - June 1987

Magnetic Materials (cont'd.

)

as described in this paper, makes measurements from 1 kHz to 1 GHz particularly easy, fast, and accurate.

[Contact: Ronald B. Goldfarb, (303)

497-3650]

Recently Published

Capobianco, T.E., Fickett, F.R., and

Moulder, J.C., Mapping of Eddy Current Probe Fields, Review of Progress

in Quantitative Nondestructive Evaluation, Vol. 5A , Chap. 3, Sec. A (Plenum

Publishing Corp. , New York, NY), pp.

705-71 1.

The magnetic fields produced by four

different eddy current probes were

mapped in the near field with very small

(0.43-mm) diameter inductive magnetic

field sensors. The four eddy current

probes included two nominally identical,

absolute, air-core probes; an absolute

ferrite-core probe; a reflection probe

with an air-core excitation coil; and

two counterwound ferrite-core pickup

coils. Measured fields for the air-core

probes are compared with values calculated from the theory of Dodd and Deeds.

All measurements were performed at 10

kHz; for the ferrite core probe, the

field intensity was also measured from 1 kHz to 1 00 kHz using conventional

methods

[Contact: Thomas E. Capobianco, (303)

497-31 41]

Heinrich, B., Cochran, J. F., Myrtle, K.

,

Lonzarich, G. , and Goldfarb, R.B.,

Ferromagnetic Resonance at 9.55 and

23.9 GHz in the Weak Ferromagnet

Ni

3 Al, Journal of Magnetism and

Magnetic Materials, Vol. 54-57, pp.

1 01 1-1 01 2 (1 986) . Ferromagnetic resonance (FMR) at microwave frequencies of 9.55 and 23.895 GHz

has been measured in the archetypal weak

itinerant ferromagnet Ni ^Al in the temperature range from 4 to 60 K. The

observed FMR lines exhibited a strong

Dysonian asymmetry and were well described over the whole temperature range

by Maxwell's equations that included

eddy currents, and by the LandauLifshitz (L-L) equation of motion including either Gilbert or L-L damping

terms. At 4 K, the best fits were obtained using slightly angular dependent

relaxation rates of 2.4 x 10 8 s- 1 for

saturation magnetization, Ms f along

[111] and 2.0 x 1

0

8 s~ 1 for Ms along

[1 00] , and using a spectroscopic splitting factor g(Gilbert) = 2.2 ± 0.01 or

g(L-L) = 2.1 4 ± 0.01.

[Contact: Ronald B. Goldfarb, (303)

497-3650]

ELECTROMAGNETIC INTERFERENCE

Radiated Electromagnetic Interference

Released for Publication

Bensema, W.D. , Koepke, G.H., and Medley,

H.W., Handbook for NBS Multisensor

Automated EM Field Measurement System,

to be published as NBSIR 86-3056.

A system is described that monitors and

collects electromagnetic (EM) field

strength information at five (optionally

10) locations simultaneously. The system has two modes of operation: 1 ) for

sampling EM fields that are stationary

for times of the order of 200 ms, and

2) for sampling changing EM fields with

a system resolution of 10 ys. Sensing

elements for Mode 1 consist of three

electrically short orthogonal dipoles

mounted together, single dipole elements, or small loop antennas. Each

element feeds a separate data input

channel for a total of 15 (optionally

30) channels. Radio-frequency energy is

converted to dc by a diode detector at

each dipole. Mode 2 sensors are diode

detectors driven by broadband antennas.

Real-time system data processing includes calculation of field strength

based on probe calibrations and processing of resultant data to satisfy measurement goals.

[Contact: William D. Bensema, (303)

497-3465]
CEEE Technical Progress Bulletin - June 1987 Page 1

9

Radiated EMI (cont'd. ) Jesch, R .L . , A Survey of Triaxial and

Mode-Stirred Techniques for Measuring

the Shielding Effectiveness of Connectors and Cables , to be published as NBSIR 86-3060.

This report is the result of an extensive literature search conducted in the

field of connectors and cables and the

problem dealing with radio- frequency

leakage characteristics and the ability

to measure the shielding effectiveness

of these connectors and cables. It

reviews two measurement techniques for

determining the shielding effectiveness:

the triaxial test technique that has

been used for over 20 years and the

mode-stirred test technique that recently has started to gain in popularity.

From this survey, certain inferences are

drawn about these techniques in terms of

device configuration, frequency range,

and ease of measurement and are presented in chart form for comparative

purposes.

[Contact: Ramon L. Jesch, (303)

497-3496]

Randa, J. , and Kanda, M., A Lattice

Approach to Volumes Irradiated by Unknown Sources, to be published as NBS

Technical Note 1 303.

We suggest an approach to the characterization of electromagnetic environments

irradiated by unknown sources. The

approach is based on the numerical solution of Maxwell's equations subject to

the constraints imposed by the measured

values of the field at a small number of

measurement points and by boundary conditions. A thorough examination is

presented of two methods for the numerical solution. The examples attempted

demonstrate the approach, but reveal

that neither technique is fully successful. Possible future directions are

suggested.

[A paper based on the contents of this

Technical Note is scheduled for presentation at the Seventh Symposium and

Technical Exhibition on EMC (Zurich,

Switzerland, March 1 987) under the title

"A Lattice Approach to Environments

Irradiated by Unknown Sources" and will

appear in the proceedings of that Symposium. A second paper based on this

material has been submitted to the IEEE

Transactions on Electromagnetic Compatibility with the title "A New Approach to

Volumes Irradiated by Unknown Sources.]

[Contact: James P. Randa, (303)

497-31 50]

Wilson, P.F., and Ma, M.T., Techniques

for Measuring the Shielding Effectiveness of Materials, to be published in

the Proceedings of the 7th International EMC Symposium and Exhibition,

Zurich, Switzerland, March 1987. [A

more complete version appeared as NBS

Technical Note 1095 (May 1986).]

Four methods for measuring the shielding

effectiveness of materials under various

conditions are considered. Coaxial

transmission line holders and a timedomain system are used to simulate

plane-wave shielding performance. The

dual transverse electromagnetic (TEM)

cell and an apertured TEM cell in a reverberating chamber are used to investigate near-field shielding capability.

Both theoretical and experimental re- sults are discussed.

[Contact: Perry F. Wilson, (303)

497-3842]

Recently Published

Crawford, M.L., and Koepke, G.H., Design, Evaluation, and Use of a Reverberation Chamber for Performing Electromagnetic Susceptibility/Vulnerability Measurements, NBS Technical Note

1 092 (April 1 986)

.

This report presents the results of work

at the National Bureau of Standards to

evaluate, document, develop (when necessary) and describe the methodology for

performing radiated susceptibility/ vulnerability measurements using a reverberation chamber. The report describes

the reverberation chamber theory of
Page 20 CEEE Technical Progress Bulletin - June 1987

Radiated EMI (cont'd.

)

operation, construction, evaluation,

functional operation, and use for performing immunity measurements. It includes an estimate of measurement uncertainties derived empirically from test

results and from comparisons with ane- choic chamber measurements. Finally, it

discusses the limitations and advantages

of the measurement technique to assist

potential users in determining the applicability of this technique to their

electromagnetic compatibility measurement needs.

[Contact: Myron L. Crawford, (303)

497-5497]

Crawford, M.L., and Koepke, G.H.,

Electromagnetic Radiation Test Facilities - Evaluation of Reverberation

Chambers Located at NSWC, Dahlgren,

VA, NBSIR 86-3051 (June 1986).

This report describes measurement procedures and results obtained from evaluating the reverberation chamber facilities

located at the Naval Surface Weapons

Center, Dahlgren, Virginia. Two chambers were tested referred to as 1 ) the

half chamber, and 2) the full chamber.

The facilities were developed by the

NSWC for use in measuring and ana- lyzing the electromagnetic susceptibility/vulnerability of weapon systems and

the shielding effectiveness of enclosures and shielding materials. A brief

description of each facility is given,

including the instrumentation used for

performing the evaluation and calibration of the facilities by the National

Bureau of Standards. Measurements

described include: 1) evaluation of the

voltage standing wave ratios of the

chamber's transmitting and receiving

antennas; 2) measurement of the chamber'

s

insertion loss or coupling

efficiency versus frequency; 3) measurement of the effectiveness of the chamber

tuners; 4) determination of the electric-field uniformity in the chamber's

test zones versus frequency; 5) determination of the absolute amplitude calibration of the test electric fields in

the chambers, based upon received power

measurements of the reference antenna

and calibrated dipole probe antenna

measurements; and 6) comparison of the

response of reference equipment under

test to test fields established inside

the NSWC reverberation chambers and the

NBS reverberation chamber. These

results can then be compared to anechoic

chamber results. Conclusions given

indicate that the NSWC chambers can be

used at frequencies down to approximately 150 MHz. Estimates are, given of

the measurement uncertainties derived

empirically from the test results.

[Contact: Myron L. Crawford, (303)

497-5497]

Crawford, M.L. , and Koepke, G.H., Performing EM Susceptibility/Vulnerability

Measurements Using a Reverberation

Chamber, EMC EXPO 86, International

Conference on Electromagnetic Compatibility, Washington, D.C., June 16-19,

1986, pp. T28.7-T28. 1 3. This paper discusses the design, evaluation, and use of a reverberation chamber

for performing electromagnetic susceptibility (EMS) measurements of electronic

equipment. Included are brief descriptions of the test procedures, application advantages and limitations, some

EMS test results, intrepretation of test

results relative to free-space test

methods, and an estimate of measurement

uncertainties.

[Contact: Myron L. Crawford, (303)

497-5497]

Friday, D.S., Methodology for Statistical Control of the Anechoic Chamber

Field Generation System, NBSIR

85-3033 (January 1986).

The microwave anechoic chamber in question is an NBS laboratory facility in

which standard plane-wave electromagnetic fields are generated. This chamber enables specialized measurements and

electromagnetic interference/electromagnetic compatibility tests to be con- ducted on antennas and other devices.

This paper is concerned with methodology
CEEE Technical Progress Bulletin - June 1987 Page 21

Radiated EMI (cont'd.

)

for assuring that the standard field

patterns generated in the NBS and similar chambers are repeatable. Procedures

are proposed tor developing a data base

from measurements obtained by placing

the system, which generates the fields,

in certain relevant reference configurations. Methodology is presented for

developing statistical control charts to

monitor both the location and the scale

parameters of these data over time.

[Contact: Dennis S. Friday, (303)

497-5395]

Hill, D.A., Out-of-Band Response of a Coax- to-Waveguide Adapter, IEEE

Transactions on Electromagnetic Compatibility, Vol. EMC-28, No. 3, pp. 156-

158 (August 1986).

The input impedance and transmission

coefficients of a coax-to-waveguide

adapter are analyzed for out-of-band

frequencies. Numerical results are

shown for an S-band adapter for frequencies from 2 to 1 0 GHz. The above-band

response is frequency sensitive because

of the presence of higher-order propagating modes in the waveguide.

[Contact: David A. Hill, (303)

497-3472]

Hill, D.A., and Francis, M.H., Out-ofBand Response of Antenna Arrays,

NBSIR 86-3047 (June 1986).

The response of antenna arrays to outof-band frequencies has been analyzed

using the effective aperture approach.

An average value of effective aperture

can be obtained by averaging out the

incidence angle and the polarization of

the incident field. Far-field patterns

have also been calculated by treating

the array element excitations as random

variables. The randomness in the element excitations causes a decrease in

directivity and an increase in sidelobe

level. Out-of-band measurements of

reflection coefficient and near-field

response have been made on two large

s lotted-waveguide arrays for frequencies

from 2 to 1 8 GHz. Both arrays are nar- row band, attributable to the large

impedance mismatch at out-of-band frequencies • [Contact: David A. Hill, (303)

497-3472]

Wilson, P.F., and Ma, M.T., Simple,

Approximate Expressions for HigherOrder Modes and Resonances in TEM

Cells, IEEE Transactions on Electromagnetic Compatibility, Vol. EMC-28,

No. 3, pp. 125-130 (August 1986).

Simple, approximate expressions for

determining the cutoff frequencies of

the first few higher-order modes and the

associated resonances in transverse

electromagnetic (TEM) cells are presented. Both symmetric and asymmetric

cells are discussed with examples.

[Contact: Perry F. Wilson, (303)

497-3842]

Wilson, P.F., and Ma, M.T., A Study of

Techniques for Measuring the Electromagnetic Shielding Effectiveness of

Materials, NBS Technical Note 1095

(May 1 986)

.

Shielding effectiveness relates to a material's ability to reduce the transmission of propagating fields in order

e lectromagnetically to isolate one

region from another. Because a complex

material's shielding capability is difficult to predict, it often must be

measured. A number of measurement

approaches are studied including the use

of a shielded room, coaxial transmission

line holders, time-domain signals, the

dual transverse electromagnetic (TEM)

cell, and an apertured TEM cell in a reverberation chamber. In each case, we consider the system's frequency range,

test sample requirements, test field

types, dynamic range, time required,

analytical background, and present data

taken on a common set of materials.

[Contact: Perry F. Wilson, (303)

497-3842]

Conduc ted Electromagnetic Interference
Page 22 CEEE Technical Progress Bulletin - June 1987

Conducted EMI (cont'd.

)

Released for Publication

Martzlof f , F.D., and Key, T.S., A

Consensus on Powering and Grounding

Sensitive Electronic Equipment, to be

published in the Proceedings of the

IEEE/IAS Conference, Denver, Colorado,

September 29-October 3, 1 986.

As sensitive electronic processing systems proliferate, concern with the quality of power supplied to these systems

increases. Efforts to alleviate perceived power supply problems have sometimes been misguided and have led to

violations of the National Electrical

Code. A new IEEE Working Group has been

formed to prepare a guide document,

which the paper describes while inviting

participation from the engineering com- munity.

[Contact: Francois D. Martzloff, (301)

975-2409]

Martzloff, F.D., and Levinson, L.M.,

Surge Protective Devices and Zinc Oxide

Varistor Technology, chapter of book

on Electronic Ceramics (provisional

title) , to be published by Marcel

Dekker, Inc., New York, New York.

A tutorial description of surge protective devices, applications, and requirements, comparing the three basic technologies: crowbars, varistors, and

avalanche diodes. The varistor material

is described in detail from the electronic ceramics point of view. A reference listing includes 30 items.

[Contact: Francois D. Martzloff, (301)

975-2409]

ADDITIONAL INFORMATION

Lists of Publications

Gibson, K. A., Page, J. M., and Miller,

C.K.S., A Bibliography of the NBS

Electromagnetic Fields Division Publications, NBS IR 85-3040 (February

1 986)

.

This bibliography lists publications of

the National Bureau of Standards' Electromagnetic Fields Division for the

period from January 1984 through September 1985, with selected earlier publications from the Division's predecessor

organizations.

[Contact: Kathryn A. Gibson, (303)

497-3132]

Kline, K.E., and DeWeese, M.E., Metrology for Electromagnetic Technology:

A Bibliography of NBS Publications

,

NBSIR 86-3048 (June 1986).

This bibliography lists the publications

of the personnel of the Electromagnetic

Technology Division of NBS in the period

from January 1970 through December 1985.

A few earlier references that are directly related to the present work of

the Division are included.

[Contact: Kathryn E. Kline, (303)

497-3678]

Palla, J.C., and Meiselman, B., Electrical and Electronic Metrology: A

Bibliography of NBS Electrosystems

Division Publications, NBS List of

Publications 94 (January 1987).

This bibliography covers publications of

the Electrosystems Division, Center for

Electronics and Electrical Engineering,

NBS, and of its predecessor sections for

the period January 1963 to January 1987.

A brief description of the Division's

technical program is given in the introduction.

[Contact: Jenny C. Palla, (301)

975-2220]

Walters, E.J. , Semiconductor Measurement Technology: A Bibliography of NBS

Publications for the Years 1962-1986,

NBSIR 87-3522 (February 1987).

This bibliography contains reports of

work performed at the National Bureau of

Standards in the field of Semiconductor

Measurement Technology in the period

from 1962 through December 1986. An

index by topic area and a list of

authors are provided.

[Contact: E. Jane Walters, (301)

975-2050]
CEEE Technical Progress Bulletin - June 1987 Page 23

1987 CEEE CALENDAR

July 28-30 (Vail, CO)

Short Course on Optical Fiber Measurements. This course is sponsored by

the National Bureau of Standards and the

University of Colorado with the cooperation of members of industry who serve as faculty together with staff from the

Electromagnetic Technology and Electromagnetic Fields Divisions. The course

is intended for scientists and engineers

involved in optical fiber characterization and emphasizes concepts, techniques, and apparatus used in measuring

engineering parameters of telecommunications-grade fibers.

The following major topic areas are addressed: optics for communications, em- phasizing geometric optics concepts;

fiber properties and parameters; indexprofile measurements; fiber bandwidth

measurements in the frequency and time

domains; fiber attenuation measurements;

connector and splice losses; optical

time-domain ref lec tome try concepts and

applications; single-mode fibers; statistics and error analyses, measurement

uncertainties; and fibers for sensors.

[Contact: Office of Conference

Services, University of Colorado (303)

492-8630; Robert L. Gallawa (303)

497-3761; or Matt Young (303) 497-3223]

September 14-16 (Research Triangle Park,

NC)

VLSI and GaAs Packaging Workshop.

This Workshop is co-sponsored by the

Components, Hybrids, and Manufacturing

Technology Society of IEEE and NBS;

attendees are expected to be knowledgeable in the field and to participate in

discussions. Topic areas include: VLSI

and wafer scale package design (characterization and implementation, cost and

performance driven solutions); package

thermal design (characteristics, re- sults, and issues); package interconnection options (wire bonding, TAB, flip

chip, or optical); GaAs IC packaging

(high speed packaging considerations);

package electrical issues (reduction of

parasitics and improvements in electrical performances); integrating package

design (from die to system, including

assembly and test issues); VLSI package

materials advancements; die-attach solutions for large chips; new failure

mechanisms in VLSI packaging. [Contact:

George G. Harman, (301) 975-2097]

September 22-25 (Boulder, CO)

Noise Measurement Seminar. This fourday course is presented and hosted by

the Electromagnetic Fields Division in

cooperation with representatives from

industry and the NBS Time and Frequency

Division. It is intended for practicing

noise metrologists and technical managers responsible for systems in which

accurate measurements of thermal and

phase noise are important. Attendees

will learn the most important precautions to take in making accurate noise

measurements and will receive a set of

notes that are suitable for use in solving precision noise measurement problems. Course topics include reference

thermal noise sources; thermal noise

measuring systems and techniques; phase

noise; and the problems of measuring

thermal noise in passive components,

amplifiers, and communication systems.

The course design combines formal lectures on theory presented by NBS staff

and industry experts with demonstrations

in NBS laboratories and demonstrations

of commercial equipment. A special

feature of the Seminar is the opportunity each day for attendees to share

their experiences in solving specific

problems or their insights on practical

noise measurement issues through short

presentations to the assembled group.

Time is scheduled for group discussions

of these presentations and other topics

raised by the Seminar.

[Contact: Sunchana Perera (303) 497-

3546]
Page 24 CEEE Technical Progress Bulletin - June 1987

1987 CEEE Calendar (cont'd.

)

September 23-25 (Gaithersburg, MD

)

Workshop on the Role of Optics in Power

System Electrical Measurements. This

Workshop is sponsored by NBS, the

Bonneville Power Administration (BPA),

the Electric Power Research Institute

(EPRI), and the Empire State Electric

Energy Research Corporation (ESEERC) and

is intended for research and development

engineers in utilities and in companies

that supply equipment to the utility

industry. The objective of this workshop is to identify anticipated opportunities for improved measurement techniques that should arise as power systems individually and collectively

evolve to meet the needs of the 1990s.

Presentations will stress the design and

testing of optical systems for 60-Hz

voltage or current measurement; the

interfacing of electronic or optical

components with existing metering and

control systems; opportunities for new measurement hardware resulting from

increased automated control of power

systems and of the testing of power

system components; and optical techniques for the measurement of electric

and magnetic fields in power systems or system components. The results of an NBS study evaluating optical techniques

for power-system electrical measurements

and carried out in agreement with BPA,

EPRI, and ESEERC will be presented as an

invited keynote. [Contact: Robert E.

Hebner, (301) 975-2403]

October 26-28 (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers (Nineteenth Boulder

Damage Symposium). This Symposium is

cosponsored by the National Bureau of

Standards, the American Society for

Testing and Materials, the Air Force

Office of Scientific Research, the Office of Naval Research, and the Defense

Advanced Research Projects Agency and

constitutes a principal forum for the

exchange of information on the physics

and technology of materials for highpower lasers.

Topics to be discussed include new materials, bulk damage phenomena, surface

and thin-film damage, design considerations for high-power systems, and fundamental mechanisms of laser-induced

damage. Proceedings of the Symposium

will be published (Note: The collection

of Symposium proceedings contains information on optics for all aspects of

high-power/high-energy lasers, .including

environmental degradation, durability,

fabrication, material growth and deposition processes, and testing). [Contact:

Susie A. Rivera (303) 497-5342]

December 10-11 (Gaithersburg, MD)

Power Semiconductor Devices Workshop.

This Workshop, sponsored jointly by IEEE

and NBS, is intended to bring together

for interactive participation those

actively working in the field of power

semiconductor devices. It will be held

in conjunction with the 1987 IEEE International Electron Devices Meeting in

Washington, DC. Four specific topic

areas have been selected, based on the

response to a questionnaire sent to over

200 power device researchers worldwide.

They are: power and high voltage

integrated circuits, discrete devices,

device modeling, and packaging. Attendees are expected to be prepared to

contribute to the development of re- sponses to specific questions that

arise in the context of the particular

topic areas; a final schedule identifying the topic areas should be available at the end of October. [Contact:

David L. Blackburn, (301) 975-2053]

CEEE SPONSORS

National Bureau of Standards

Department of Defense

Defense Advanced Research Project

Agency; Defense Nuclear Agency;

National Security Agency; Combined

Army/Navy/Air Force Calibration
CEEE Technical Progress Bulletin - June 1987 Page 25

CEEE Sponsors (cont'd.)

Coordination Group

U.S. Air Force

Bolling Air Force Base; Hanscom Air

Force Base; Newark Air Force

Station; Rome Air Development

Center; Space Division; Space & Missile Organization; Research

Projects Office; Wright-Patterson Air

Force Base

U.S. Army

Aberdeen Proving Ground; Aviation

Research & Development Command; Fort

Belvoir; Fort Monmouth; Harry Diamond

Laboratories; Materials & Mechanics

Research; Redstone Arsenal

U.S. Navy

Aviation Logistics Center (Patuxent

River); Metrology Energy Center/Seal

Beach; Naval Air Test Center; Naval

Ocean Systems Center; Naval Research

Laboratory; Naval Sea Systems

Command; Naval Surface Weapons

Center; Naval Weapons Support Center

(Crane); Office of Naval Research

Department of Commerce

NOOA

Department of Energy

Bonneville Power Administration;

Energy Systems Research; Fusion

Energy; High Energy & Nuclear

Physics

Department of Justice

Law Enforcement Assistance

Administration

Department of Transportation

National Highway Traffic Safety

Department of Treasury

Bureau of Engraving & Printing

The Charles Stark Draper Laboratory

Food and Drug Administration

Hughes Aircraft Company

International Copper Research

Association

International Telecommunications

Satellite Organization

Environmental Protection Agency

Office of Radiation Programs

National Aeronautics and Space

Administration

Lyndon B. Johnson Space Center

Sandia National Laboratories
N BS-1 14A (REV. 2>8C) U.S. DEPT. OF COMM.

4.

1 . BIBLIOGRAPHIC DATA

SHEET (See instructions)

PUBLICATION OR 2 REPORT NO.

NBSIR 87-3563

. Performing Organ. Report NoJ 3.

TITLE AND SUBTITLE

Publ ication Date June 1987

Center for Electronics and Electrical Engineering Technical Progress Bulletin Covering

Center Programs, July to September 1986 with 1987 CEEE Events Calendar

5. AUTHOR(S)

E. Jane Walters, compiler

6. PERFORMING ORGANIZATION (If joint or other than NBS, see in struction s) 7. Contract/Grant No. national bureau of standards

DEPARTMENT OF COMMERCE

WASHINGTON, D.C. 20234

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City. State, ZIP)

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

10. SUPPLEMENTARY NOTES

8. Type of Report & Period Covered

July-September 1986

All technical information included in this document has been approved for publication

previously.

J Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11.

ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bi bl iography or literature survey, mention it here)

This is the sixteenth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. This issue of the CEEE Technical Progress Bulletin covers

the third quarter of calendar year 1986. Abstracts are provided by technical area

for both published papers and papers approved by NBS for publication.

12.

KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolon s) antannas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers; semiconductors; superconductors

13. AVAILABILITY 14. NO. OF

PRINTED PAGES

[XXj Uni i mi ted For Official Distribution. Do Not Release to NTIS 29

~1 Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C. 20402. 15. Price

[XX] Order From National Technical Information Service (NTIS), Springfield, VA. 22161 $11.95

USCOMM-DC 6043-P80

U.S. DEPARTMENT OF COMMERCE

NATIONAL BUREAU OF STANDARDS

GATTHERSBURG. MD 20899

RETURN POSTAGE GUARANTEED

BULK RATE

POSTAGE & FEES PAID NBS

PERMIT No. G195

OFFICIAL BUSINESS

PENALTY FOR PRIVATE USE $300

KEY CONTACTS:

Center Headquarters (720) Director, Mr. Judson C. French (301) 975-2220

Deputy Director, Mr. Robert I. Scace (301) 975-2220

Electrosystems Division (722) Chief, Dr. Oskars Petersons (301) 975-2400

Electromagnetic Fields Division (723) Chief, Dr. Ramon C. Baird (303) 497-3 13 1 Electromagnetic Technology Division (724) Chief, Dr. Robert A. Kamper (303) 497-3535

Semiconductor Electronics Division (727) Chief, Mr. Frank F. Oettlnger (301) 975-2054

INFORMATION:

For additional Information on the Center for Electronics and Electrical Engineering, write orcall

Center for Electronics and Electrical Engineering

National Bureau of Standards

Metrology Building, Room B-358

Gaithersburg, MD 20899

Telephone (301) 975-2220