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"*fAU <>* NBS TECHNICAL NOTE 825

1974 Supplement

U.S. DEPARTMENT OF COMMERCE/ National Bureau of Standards

QC

100

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NATIONAL BUREAU OF STANDARDS

The National Bureau of Standards 1 was established by an act of Congress March 3, 1901. The Bureau's overall goal is to strengthen and advance the Nation's science and technology

and facilitate their effective application for public benefit. To this end, the Bureau conducts

research and provides: (1) a basis for the Nation's physical measurement system, (2) scientific and technological" services for industry and government, (3) a technical basis for equity in trade, and (4) technical services to promote public safety. The Bureau consists of the Institute for Basic Standards, the Institute for Materials Research, the Institute for Applied Technology,

the Institute for Computer Sciences and Technology, and the Office for Information Programs.

THE INSTITUTE FOR BASIC STANDARDS provides the central basis within the United

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and Frequency 3 — Laboratory Astrophysics ~ — Cryogenics n. THE INSTITUTE FOR MATERIALS RESEARCH conducts materials research leading to improved methods of measurement, standards, and data on the properties of well-characterized

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THE OFFICE FOR INFORMATION PROGRAMS promotes optimum dissemination and

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National Bureau of Standards MAY 1 4 1974 Properties of Selected Superconductive

Materials- 1974 Supplement

B. W. Roberts

Superconductive Materials Data Center

General Electric Research and Development Center

P. O. Box 8, Schenectady, N.Y. 12301

(Extends NBS Technical Note 724)

4*>» 0F c

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* %rAU of *

U.S. DEPARTMENT OF COMMERCE, Frederick B. Dent, Secretary

NATIONAL BUREAU OF STANDARDS, Richard W. Roberts, D/recfor

Issued April 1974
National Bureau of Standards Technical Note 825

Nat. Bur. Stand. (U.S.), Tech. Note 825, 1974 Supplement, 88 pages (Apr. 1974) CODEN: NBTNAE

U.S. GOVERNMENT PRINTING OFFICE

WASHINGTON: 1974

For sale by the Superintendent of Documents, U.S. Government Printing Office, Washington, D.C. 20402 (Order by SD Catalog No. C13.46:825). Price $1.25 .
TABLE OF CONTENTS

Page

Introduction 1

Background 1

General Properties of Superconductors 2

High Field Superconductivity 4

New Developments in Superconductive Materials 4

Metallurgical Aspects of Sample Preparation 8

Notes Concerning the Data Tables 9 Table 1. Selected Properties of the

Superconductive Elements 10

Table 2. Tabulation of Superconductive

Materials (Also see Table 3) 14

Table 3. Superconductive Materials with

Organic Constituents 55

Table 4. High Magnetic Field (Type II)

Superconductive Materials and

Some of Their Properties 58

Bibliography 65

Review Articles and Books With Emphasis On Superconductive

Materials 80

PROPERTIES OF SELECTED SUPERCONDUCTIVE MATERIALS

SUPPLEMENT, 1974

B.W. Roberts

This report includes data on additional superconductive

materials extracted from a portion of the world literature up to mid-1973. The data presented are new values and have not been

selected or compared to values (except for selected values of the elements) previously assembled by the Superconductive Materials Data Center. The properties included are composition, critical temperature, critical magnetic field, crystal structure and the results of negative experiments. Special tabulations of high

magnetic field materials with Type II behavior and materials with

organic components are included. All entries are keyed to the literature and a list of reviews centered on superconductive

materials is included.

Keywords: Bibliography; composition; critical fields; critical temperature; crystallographic data; data compilation; low temperature; superconductive materials; superconductivity.

INTRODUCTION

This Technical Note extends the data set on superconductive materials published in Progress

in Cryogenics, Vol. IV, 1964, pp. 160-231*, and National Bureau of Standards Technical Notes 482

(Issued May 1969) and 724 (Issued June 1972). Because the world activity in the study of superconductive

materials has continued at a high rate, several hundred references are in hand for future perusal and

inclusion.

It is hoped that users of these data on superconductive materials will inform the author on needed corrections, deletions and additional information which may include heretofore unpublished results

to be referenced under the contributor's name and institution.

BACKGROUND

Over sixty years of research on the phenomena of superconductivity has led to an impressive

current world activity aimed at further understanding as well as technical and industrial utilization. This effort has produced a technology employed by many technical concerns. Some of the latest developments include superconductive coils capable of producing magnetic fields approaching 20 Tesla/"'' Superconductive magnets with precise and homogeneous fields and with selective spacial configurations which

are readily produced including some field gradient patterns impossible to form with normal state conductors. Linear accelerators are planned utilizing superconductive cavity walls. Large superconductive

magnets have been constructed for hydrogen bubble chambers with coil diameters on the order of 3 meters

and more. Plasma researchers have constructed floating superconductive coils. A direct current

This work has been partially supported by the NBS Office of Standard Reference Data

under Contract 3-35717.

This data set has also been published in a Soviet book "New Materials and Methods of Investigating

Metals and Alloys, " edited by Professor I.I. Kornilov of the Baikov Institute of Metallurgy, 1966,

Moscow, pp. 1-9 8. ^Hybrid magnets composed of superconductive coils with regular magnetic material cores are planned

for 25 Tesla fields.
transformer has been produced utilizing a special arrangement of superconductive thin films for tunneling.

A dc superconductive motor of 3250 hp has been operated snccessfully for water pumping and a 150 hp

superconductive generator constructed.

A 5 MW ac electrical generator with the cooled superconductive elements on the rotor has been

constructed.

In the area of propulsion application the detailed design of a 3000 hp dc motor and generator is under way with an eye in the future on a 40, 000 hp motor and related 20, 000 hp generator.

Recent significant technical achievements utilizing superconductivity have included a prototype

simulated rail car made in Japan weighing over 2000 kg levitated to a height of 10 cm by superconductive

magnets reacting against conducting coils. The car has been accelerated to a velocity of 50 km/hr. It now appears that the use of superconductive coils to produce the strong magnetic fields required for

levitation is feasible and that the major technical problem will be in the development of methods for positional control of the train cars at high speeds.

The Josephson quantum effects are being exploited in various high precision voltage -current

devices and in the definition of the standard volt.

Superconductive magnet systems have become common items in laboratories and advance tech- nology centers throughout the world.

The influx of new literature covering new superconductive materials continues unabated. The

recent 13th International Conference on Low Temperature Physics at Boulder, Colorado included about 170 papers on the science of superconductive phenomena and materials and the prior conference in Japan

presented a like number. Also, additional large technical meetings focusing on applications, such as the applied superconductivity conference*' recently held at Annapolis, are regularly scheduled.

GENERAL PROPERTIES OF SUPERCONDUCTORS

The historically first observed and most distinctive property of a superconductive body is the near total loss of resistance at a critical temperature Tc characteristic of each material. Figure 1(a) illustrates schematically two types of possible transitions. The sharp vertical discontinuity is indicative

of that found for a single crystal of a very pure element or one of a few well annealed alloy compositions.

The broad transition, illustrated by broken lines, suggests the transition shape seen for materials that are inhomogeneous and contain unusual strain distributions. Careful testing of the resistivity limits for super- conductors shows that it is less than 4 x 10~25 ohm-m, while the lowest resistivity observed in metals is of the order of 10" " ohm-m. If one compares the resistivity of a superconductive body to that of copper at room temperature, the superconductive body is at least 10*' times less resistive.

The temperature interval, Tc, over which the transition between the normal and superconductive

states take place, may be of the order of as little as 2 x 10~ 5 K or several K in width, depending upon the material state. The narrow transition width was observed in 99. 9999 purity gallium single crystals.

A Type I superconductive body below Tc

, as exemplified by a pure metal, exhibits perfect dia- magnetism and excludes a magnetic field up to some critical field Hc

, whereupon it reverts to the normal

state as shown in the H-T diagram of Figure 1(b).

* Proceedings of the 1972 Applied Superconductivity Conference (May 1-3, 1972, Annapolis, Md. ) (IEEE, Order Dept. , 345 East 47 Street, N.Y., N. Y. 10017).

** The NBS Office of Standard Reference Data, as administrator of the National Standard Reference

Data System, has officially adopted the use of SI units for all NSRDS publications, in accordance with

NBS practice. This publication does not use SI units uniformly because contractual commitments with

the author predate establishment of a firm policy on their use by NBS. Other appropriate conversion

factors will be found in Tables 1 and 2. We urge that specialists and other users of data in this field accustom themselves to SI units as rapidly as possible.
Tc

(a)

NORMAL

Figure 1. Physical properties of superconductors, (a) Resistivity

versus temperature for a pure and perfect lattice (solid line).

Impure and/or imperfect lattice (dashed line), (b) Magnetic fieldtemperature dependence for Type I or "soft" superconductors,

(c) Schematic magnetization curve for "hard" or Type II superconductors.
HIGH FIELD SUPERCONDUCTIVITY

The discovery of the large current-carrying capability of Nb3Sn and other similar alloys has led

to an extensive study of the physical properties of these alloys. In brief, a high field superconductor, or Type II superconductor, passes from the perfect diamagnetic state at low magnetic fields to a mixed state and finally to a sheathed state before attaining the normal resistive state of the metal. The magnetization

of a typical high field superconductor is shown in Figure 1(c). The magnetic field values separating the four stages are given as Hc

^, H o» an<^ Hc 3. The superconductive state below Hc ^ is perfectly diamagnetic

and identical to the state of most pure metals of the "soft" or Type I type. Between H c ^ and H 2 a "mixed

state" is found in which quantized flux lines or vortices create lines of normal

conductor in a superconductive matrix. The volume of the normal state is proportional to -4ttM in the "mixed state" region. Thus at Hc 2 the fluxon density has become so great as to drive the interior

volume of the superconductive body completely normal. Between H c 2 and Hc 3 the superconductor has a sheath of current- carrying superconductive material at the body surface, and above Hc g the normal state exists. With several types of careful measurement, it is possible to determine Hc^, Hc2» and Hc 3. Table IV contains some of the available data on high field superconductive materials.

A more complete representation of the states present in a high field superconductor is given in Fig. 2 with the additional phenomenon called fluctuation superconductivity. The latter phenomenon is evidenced in several physical properties above the appropriate critical fields and temperatures.

High field superconductive phenomena are also related to specimen dimension and configuration.

For instance, the Type I superconductor, Hg, has entirely different magnetization behavior in high magnetic fields when contained in the very fine set of filamentary tunnels in an unprocessed Vycor glass. The

great majority of superconductive materials are Type II. The elements in very pure form with the possible

exceptions of vanadium and niobium are Type I. A further complication in describing a high field superconductor has been found in a few examples

wherein a specific alloy may exhibit Type II behavior up to a temperature intermediate between Tc and

absolute zero and then is a Type I superconductor from the intermediate temperature to Tc

.

NEW DEVELOPMENTS IN SUPERCONDUCTIVE MATERIALS

Among superconductive material highlights for 1971-1973 must be included the definitive jump in the highest available critical temperature of known superconductors. John R. Gavaler has reported

(Appl. Phys. Letters, Oct. 15, 1973)*that he has prepared, by sputtering techniques, thin films (microns)

of Nb-Ge alloy near the composition NbgGe with an onset critical temperature of 22. 3°K. The films are

deposited on hot substrates at 700-900°C. This is the first superconductive material with a critical temperature substantially above the boiling point of liquid hydrogen and consequently has already engendered

considerable technological interest. Gavaler attributes the high critical temperatures of the films "to the formation of a more nearly perfect stoichiometric Nb3Ge compound than was previously obtainable. "

Shortly later, L. R. Testardi reported (Symposium on Superconductivity and Lattice Instabilities,

Gatlinburg, Sept. 19 73, Unpublished) that he had attained an onset critical temperature of 23.2°K, by

following a somewhat different path of sputtering onto a very hot substrate. This critical temperature is just over 10% higher than those of the Nb3(Al, Ge) alloys which had held the highest temperature position.

An intense peak of interest has centered on tiny organic crystals of TTF/TCNQ (tetrathiofulvalene/tetracyano-p-quinodimethane) which has the largest maximum electrical conductivity of any known organic compound (o max = 1. 47 x 10 ohm" cm at 66°K). (See Ferraris et al., J. Amer. Chem.

Soc. 95, 948 (1973).) L. B. Coleman, et al . (Solid State Commun. 12, 1125 (1973)) has reported extraordinary conductivity maxima in TTF/TCNQ single crystals near approximately 60°K which at first sight

suggested the onset of superconductive fluctuations just above a Peierls instability. The latter report

continues to be investigated because of difficulty in reproducing the experimental results routinely and

interpretation of the mechanisms producing the maxima. (For recent discussion, see W. D. Metz,

Science 180, 1041 (1973) and G. B. Lubkin, Physics Today 26, 17 (1973).

Appl. Phys. Letters 23, 480 (1973).
PHASE DIAGRAM

Type I

Meissner

Very Weak

Fluctuation

Superconductivity

Normal

Type n:

Sheath

Mixed

Meissner

Fluctuation

. Superconductivity

Figure 2. H-T phase diagram representation of Type I and

Type II superconductors with locations for fluctuation superconductivity indicated. (R. R. Hake, personal communication

and J. Applied Phys 40, 5148 (1969). "The Thermodynamics

of Type I and Type II Superconductors. ")
An interesting development with an A15 crystal type cubic structure alloy found to be superconductive many years ago in the 12. 5 - 14. 5K range is NbgGa. Careful metallurgical preparation and annealing sequences recently discovered (G. W. Webb, et al ., Solid State Commun. 9, 1769 (1971)) have raised

the onset critical temperature to 20. 3K. It is of interest to note the location of this new value for NbgGa

and the NbgGe thin film critical temperatures on the electron/atom ratio plot as shown in Fig. 3. Will a 25°K critical temperature be attained at the 4. 7 electron/atom peak position?

The first high critical temperature superconductive oxide has been reported (D. C. Johnston,

et al ., Mat. Res. Bull. 8, 777 (1973)) with a critical temperature as high as 13. 7°K (onset). The

composition is Li^_x Ti2_ x Q4 and is one of approximately 200 known spinel (Hl-i) compounds of which

only three other examples have been found superconductive with critical temperatures below 4. 8°K.

An interesting observation of the superconductive state in Pd-Ag alloys charged with D or H by

ion implantation has been reported by Buckel and Stritzker (Phys. Letters 43A, 403 (1973)). The gas

constituents are introduced at 4. 2°K and are localized in a very thin surface layer. Critical temperatures

as high as 16°K have been found for about 20 atom percent Ag in Pd with the D implanted surface layer.

The element lutetium was discovered to be superconductive at~0. 5K at a pressure of 125-150 kbar

(J. Wittig, et al ., to be published in Proceedings, LT13) and in Hafnium at ~0. 22K at 150 kbar (C. Probst

and J. Wittig, to be published in Proceedings, LT13). These demonstrations of the presence of the superconductive state are important in outlining the theoretical chemistry and solid state properties of the early

transition elements including lanthanum.

Among new moderately high critical temperature superconductors reported recently have been

M05 jPbQ gSg at 13. 2 - 12. 5K and Lig ^-o 3 Til. 1^2 at over 13K with onset" temperatures as high as 15K. Both compound families are outside the cubic structure system. The former is rhombohedral

(B. T. Matthias, et al ., Science 175, 1465 (1972)) and the latter hexagonal (H. E. Barz, et al ., Science 175 , 884 (1972)). Both systems are ternary and contain elements not found to be superconductive in elemental

form and both systems are three-dimensional crystalline materials and show no strong evidence of layering

tendencies. It is interesting to note that the (Y, Th^Cg system (see TN 724), which gives maximum Tc of 17K, is a ternary with a novel structure, although of the cubic system.

An important new effort towards calibration and the standardization of techniques and temperatures for the measurement of superconductive critical temperatures is the work at the National Bureau of Standards by R. J. Soulen, Jr. andJ.H. Colwell (J. Low Temp. Phys. 5_, 325 (1971)) and J. F. Schooley

and R.J. Soulen, Jr. (Proc. 12th Intern. Conf. on Low Temp. Phys. [Academic Press of Japan, Tokyo,

1971] and the XIII Inter. Congress of Refrigeration, pp. 192-198). They have carefully measured, compared and tested the reproducibility and width of the critical temperature of Pb, In, Al, Zn and Cd for thermometric fixed points as well as having looked very carefully at the equivalence of the transition

temperature when measured by the three techniques: (1) Electrical resistance, (2) magnetic susceptibility

and (3) heat-capacity measurements. In the case of well-annealed polycrystalline and pure (99. 999%) indium

they find that the midpoints of each type transition are identical to within 0. 1 mK. Arrangements have been

made to provide cryogenic experimenters with samples and devices through the NBS Office of Standard

Reference Materials. (Ask"

1 " for NBS Special Publication 260-44, "Preparation and Use of Superconductive

Fixed Point Devices SRM 767. ")

A central topic in the search for the criteria of high critical temperature superconductive

materials has been the association of "instabilities" with most above average critical temperature superconductors. The instabilities may be characterized as incipient phase changes above or near the critical temperatures. (See AIP Conf. Proc. No. 4, "Superconductivity in d- and f- Band Metals, " New York, 1972, B. T. Matthias, p. 367 and J. C. Phillips, Phys. Rev. Letters, 26, 543 (1971).)

The general relevance and widespread evidence for lattice instabilities became evident at the Symposium on Superconductivity and Lattice Instabilities in Gatlinburg (Sept. 1973) which drew over 190 participants from 80 U. S. institutions and seven additional countries.

Superintendent of Documents, U.S. Government Printing Office, Washington, D. C. 20402. (Order by

SD Catalog No. C13. 10:260-44.) Price 75 cents.
25r

20

15

^

K>-

Nfc,(AI,C«).^J J»,6«

i

?i*Vtl

• SUPERCONDUCTIVE

TRANSITION

TEMPERATURE

TNOT SUPERCONDUCTIVE

TO THIS TEMPERATURE

i

I

I

II/

i

l -.4.

1 *

I

1

I

i. *

ii'

II

/

/

.1

I

3 4

SS^

5 6 7

VALENCE ELECTRONS/ATOM

Figure 3. Superconductive critical temperature versus valence electron/

atom ration for A15 or "B-W" type compounds. The uppermost points

for Ndq ^GeQ 2

r sputtered films are onset critical temperatures.
The past two years has included not only the above briefly mentioned but substantial advances in superconductive materials, but also the naming of the Nobel Prize winners for the development of the BCS.

theory. The winners' Nobel lectures are now published: Prof. J. Bardeen, in Physics Today 26, 41 (1973); Prof. L.N. Cooper, Physics Today 26, 31 (1973) and Prof. J. R. Schrieffer, Physics Today 26723 (1973).

The 1973 Nobel prizes for physics have recently been awarded to Drs. Ivar Giaever and B. D.~Josephson

for their work on superconductive tunneling.

METALLURGICAL ASPECTS OF SAMPLE PREPARATION

The sensitivity of superconductive properties to the material state is most pronounced and has

been used on occasion in a reverse sense to study and specify the detailed state of alloys, the mechanical

state, the homogeneity, and the presence of impurity atoms and other electron scattering centers are all capable of controlling the critical temperature and the current- carrying capabilities in high magnetic fields. Well annealed specimens usually show sharper transitions than those that are strained or inhomogeneous.

This sensitivity to mechanical state underlines a general problem in the tabulation of properties of superconductive materials. The occasional divergent values of the critical temperature and of the critical fields quoted for a Type II superconductor may lie in the variation in sample preparation. Critical temperatures

of materials studied early in the history of superconductivity must be evaluated in light of the probable

metallurgical state of the material as well as the availability of less pure starting elements. It has been

noted that recent work has given extended consideration to the metallurgical aspects of sample preparation.

Acknowledgments

We acknowledge the helpful suggestions, corrections and submission of reprints and data from the following: M. B. Robin, J. E. Cox, Robert Reich, E. Bucher, J. Wittig, R. E. Emstrom, F.E. Wang,

W. O. Gentry, E. E. Havinga, K. Gschneidner, Jr. , M. S. Lubell, B. T. Matthias, S. Foner, J. R. Gavaler,

S. Methfessel, B. Stritzker, E. M. Savitskii, A. Junod, L. R. Testardi, A. G. Shepelev, D. Schneider,

C. Rizzuto, J. F. Schooley, R.H. Hammond, and C.J. Raub and others inadvertently omitted.

Continued excellent assistance by Miss Vera Chase of our library staff is acknowledged and the help and patience of Mrs. Joan Wolfe and Miss Helen Wilford in report preparation is much appreciated.
NOTES CONCERNING THE DATA TABLES

Table 1 lists the elements' and some of their superconductive properties. The data have been

selected generally from recent studies in which sample purity and perfection appear to have been

seriously considered.

Table 2 contains superconductive materials reported during the period plus all materials that have been reported to be tested specifically for a superconducting transition down to some temperature

Tn

without discovery of a transition. All compositions are denoted on an atomic basis, i. e. , AB, AB2

or ABq for compositions, unless noted. Solid solutions or odd compositions may be denoted as Az Bj_ z , or AZ B. A series of three or more alloys is indicated as Ax By or by actual indication of the atomic

fraction range such as Aq_q_ 6^1-0 4* ^e cr^i ca^ temperature of such a series of alloys is denoted by

a range of values or possibly the maximum value. In many cases several references will be found for the same alloy. This usually denotes a separate measurement by each source, and in a few cases may even

indicate a disagreement over the superconductive properties. In view of the previous discussions con- cerning the variability of the superconductive properties as a function of purity and other metallurgical

aspects, it is recommended that the appropriate literature be checked to determine the most probable

critical temperature or critical field of a given alloy. Another point of difficulty lies in the selection of the critical temperature from a transition observed in the effective permeability or the change in resistance, or possibly the incremental changes observed in frequency observed by certain techniques. Most authors

choose the mid-point of such curves as the probable critical temperature of the idealized material, and

others will choose the highest temperature at which a deviation from the normal state property is observed.

Often the choice is not specified.

Table 3 is indicative of a new facet in superconductive materials; the metallic or inorganic superconductor combined most often with an intercalated or layered organic substance. These special materials

exhibit three-dimensional superconductivity and high anisotropic high magnetic field properties.

Table 4 lists high magnetic field superconductors.

A bibliography of review articles concerned primarily with the experimental and material

aspects of superconductivity is appended.
SELECTED PROPERTIES OF THE SUPERCONDUCTIVE ELEMENTS

Table 1. Properties of

Elements are ] ture Data and

the Superconductive Elements (New Data on the

Referenced in Table 2 Along with Crystal StrucParameters for Non-superconductive Elements)

Element T (K)

c H (oersteds) 1 6~(K)

o D Y(mJmole~ 1 deg.K2

)

Al 1.175 104.93 420 1.35

Be 0.026 0.21

Cd 0.518,0.52 29.6 209 0.688

Ga 1.0833 59.3 325 0.60

Ga (a) 5.90, 6.2 560

Ga ( v ) 7.62 950, HF*

Ga (6) 7.85 815

Hg (a)

Hg (e)

4.154

3.949

411

339

87,71.9

93

1.81

O.Ui-C.O 1 OA

1.37

In 3.405 281.53 109 1.672

Ir 0.14, 0.11 19 425 3.27

La (a) 4.88 808, 798 142 10.0, 11.3

La (?) 6.00 1,096 139 11.3

Mo 0.916 90, 98 460 1.83

Nb 9.25 1970, HF 277, 238 7.80

Os 0.655 65 500 2.35

Pa 1.4

Pb 7.23 803 96.3 3.0

Re 1.697 188, 211 415 2.35

Ru 0.493 66 580 3.0

Sb 2.6-2.7** HF

Sn 3.721 305 195 1.78

Ta 4.47 831 258 6.15

Tc 7.73, 7.78 1410, HF 411 4.84, 6.28

Th 1.39 159.1 165 4.31

Ti 0.39 56, 100 429, 412 3.32

Tl 2.332, 2.39 181 78.5 1.47

Note: Symbols explained on pages 13 and 14.

10
(Table 1 cont' d)

Element T

c

(K) H (oersteds)

o

e D

(K)t Y(mJmole~-'- deg.K )

V 5.43, 5.31 1100, 1400, HF 382 9.82

W 0.0154 1.15 550 o.yo

Zn 0.875 55 319.7 0.633

Zr 0.53 47 290 2.78

Zr (,) 0.65

Thin Films Condensed at Various Temp eratures

Al 1.18—5.7 HF

Be -03, -9.6 HF

with KC1 6.5-10.6 HF

with Zn etio-porphyrin

10.2

Bi -2—5, 6.11, 6.154,

6.173

Cd 0.53-0.91

Ga 6.4-6.8, 7.4-8.4,

8.56

In 3.43-4.5

in glass pores

3.68-4.17 HF

La 5.0-6.74

Mo 3.3-3.8, 4-6.7

Nb 6.2-10.1 HF

Pb ~2 - 7.7

Re ~7

Sn 3.6, 3.84-6.0

Ta <1. 7-4. 25,3.16-4.8 HF

Ti 1.3

Tl 2.64

V 5.14-6.02

W <1. 0-4.1

Zn 0.77-1.48

11
DATA FOR ELEMENTS STUDIED UNDER PRESSURE (Table 1 Cont'd)

Element T

c

(K) Pressure

As 0.31-0.5

0.2-0.25

220-140 kbar

-140-100 kbar

Ba II -1.3 55 kbar

III 3.05 85-88 kbar

III -5.2 > 140 kbar

Bi II 3.916,3.90, 3.86 25, 25.2, 26.8 katm

III 6.55, 7. 25 -37 kbar, 27-28.4 katm

IV 7.0 - 43, 43-62 kbar

V 8.3, 8.55 81 kbar

VI 8.55 90, 92-101 kbar

Ce 1.7 50 kbar

Cs -1.5 > -125 kbar

Ga II 6.24, 6. 38 >35 katm

II' 7.5 > 35 katm Then P->0

Ge 4.85 - 5 5.35

•4; -120 kbar; 115 kbar

La

P

-5.5-11.

4.7

5.8

93 to -140 kbar

>100 kbar

170 kbar

Pb II 3.55, 3. 6 160 kbar

Sb 3.55

3.52

3.53

3.40

85 kbar

93 kbar

100 kbar

-150 kbar

Se II 6.75, 6. 95 -130 kbar

Si 6.7; 7.1 120 kbar

Sn II 5.2

4.85

125 kbar

160 kbar

III 5.30 113 kbar

12
(Table 1 Cont'd.)

? Element T (K) Pressure

c

Te II 2.05 43 kbar

3.4 50 kbar

III 4.28 70 kbar

IV 4.25 84 kbar

Tl (CUB) 1.45 35 kbar

(HEX) 1.95 35 kbar

U 2.3 10 kbar

Y ~1.2,~2. 7 120-170 kbar

IStiX \JC

For another data set see Mendelssohn, K. , Cryophysics,

p. 178 (Interscience, New York, 1960) and Gschneidner,

K. A., Jr. in Solid State Physics 1_6, 275-426 (1964).

Parkinson, D. H. , Rep. progr. Phys. 21, 226 (1958).

Also see Reference 572 and Gschneidner, K. A., Jr. in

Solid State Physics 16, 275-426 (1964).

k

HF See Table 4 for additional data on H , , H and H . cl c2 c3

To convert "oersteds" to ampere/meters, multiply by 79.57.

^o convert"katm" to "newt on /meter 2" , multiply by 1.013 x 10

To convert "kbar" to "newton /meter 2" , multiply by 1 x 10 .

13
Table 2. TABULATION OF SUPERCONDUCTIVE MATERIALS

Table 2. Tabulation of Superconductive Materials (including Proven

Non-superconductors) with Critical Temperatures and Fields, Crystal

Structure Data where determined, and Source References.

Symbols used :

T The lowest temperature at which a material has

been checked for a superconductive transition.

HF In H column, indicates that some information

is available in Table 4 on high field magnetic

properties

.

v On material or reference indicates a thin film

study.

T

1 (

v Denotes incremental changes in T from T of

C

^ ' pure metal. For example, T' (+0.05) denotes that

two or more measurements have been made by adding

a small amount of alloying element to a metal to

form a dilute alloy (or mixture) and in so doing

the T has been raised by 0.05K.

The entry T' (-0.3 K/a%) would indicate two or more measurements in which the critical temperature decreased 0.3K per atomic percent of alloying element added.

n Number of carriers in superconductive semiconductive materials

# Electronic specific heat (y) and/or Debye 6 data

given.

14
KEY TO CRYSTAL STRUCTURE TYPES FOUND IN TABLE 2

"Struckturbericht"

Type* Example Class

Al Cu Cubic, f.c.

A2 W Cubic, b.c.

A3 Mg Hexagonal, close packed

A4 Diamond Cubic, f.c.

A5 White Sn Tetragonal, b.c.

A6 In Tetragonal, b.c.

(f.c. cell usually used)

A7 As Rhombohedral

A8 Se Trigonal

A10 Hg Rhombohedral

A12 cs-Mn Cubic, b.c.

A13 3-Mn Cubic

A15 13 -W Cubic

Bl NaCl Cubic, f.c.

B2 CsCl Cubic

B3 ZnS Cubic

B4 ZnS Hexagonal

^ NiAs Hexagonal

B8

2

Ni

2

In Hexagonal

BIO PbO Tetragonal

Bll Y-CuTi Tetragonal

B17 PtS Tetragonal

B18 CuS Hexagonal

B20 FeSi Cubic

B27 FeB Ortho- rhombic

*See W. B. Pearson, Handbook of Lattice Spacing and Structures of

Metals (Pergamon, New York, 1958), p. 79, also Vol. II (Pergamon,

New York, 1967), p. 3.

15
KEY TO CRYSTAL STRUCTURE TYPES FOUND IN TABLE 2

"Struckturbericht"

Type * Example Class

B31 MnP Ortho -rhombic

B32 NaTl Cubic, f.c.

B34 PdS Tetragonal

B

f 6-CrB Ortho-rhombic

B

8

MoB Tetragonal, b.c.

h WC Hexagonal

B

i y'-MoC Hexagonal

CI CaF

2

Cubic, f.c.

Clb

MgAgAs Cubic, f.c.

C2 FeS

2

Cubic

C6 Cdl

2 Trigonal

Cllb MoSl

2 Tetragonal, b.c.

C12 CaSi

2 Rhombohedral

C14 MgZn

2 Hexagonal

C15 Cu

2Mg Cubic, f.c.

C15b

AuBe. Cubic

C16 CuAl

2 Tetragonal, b.c.

C18 FeS

2

Ortho-rhombic

C22 Fe

2

P Trigonal

C23 PbCl

2 Ortho -rhombic

C32 A1B

2 Hexagonal

C36 MgNi

2 Hexagonal

C37

C49

Co

2Si

ZrSi„

Ortho-rhombic

Ortho-rhombic

16
KEY TO CRYSTAL STRUCTURE TYPES FOUND IN TABLE 2

"Struckturbericht"

Type* Example Class

C54 TiSi

2

Ortho-rhombic

C

c Si

2

Th Tetragonal, b.c.

D0

3

BiF

3

Cubic, f.c.

D0

11 Fe

3

C Or tho-rhombic

D0

18

Na-jAs Hexagonal

D019 Ni

3

Sn Hexagonal

^o NiAl

3

Ortho -rhombic

D0

22

TiAl

3 Tetragonal

DO

e Ni

3

P Tetragonal, b.c.

Dig Al.Ba

4 Tetragonal, b.c.

Dl

c PtSn4 Ortho -rhombic

D2

1

CaB

6

Cubic

D2

c MnU.

6 Tetragonal, b.c.

D2d CaZru Hexagonal

D5

2

La2°3 Trigonal

D5

8

sb

2s

3

Or tho -rhombic

D5

c Pu2

C

3

Cubic

D7

3

Th

3

P

4 Cubic, b.c.

D7b Ta

3

B

4

Ortho -rhombic

D8, Fe

3

Zn1Q Cubic, b.c.

D8

2 Cu.Zng Cubic, b.c.

D83 Cu

9

Al

4

Cubic

D8

8 Mn

5 si

3 Hexagonal

D8, CrFe Tetragonal

17
KEY TO CRYSTAL STRUCTURE TYPES FOUND IN TABLE 2

"Struckturbericht"

Type* Example Class

D8

± D10,

E2

1 E9

3

HI,

L1

Ll

2

L

2b

l;

Mo

2

B

5 Rhombohedral

Fe

3

Th

? Hexagonal

CaT10

3

Cubic

Fe

3

W

3

C Cubic, f.c.

Al2Mg0

4 Cubic, f.c.

CuAu Tetragonal

Cu

3

Au Cubic

ThH

2 Tetragonal, b.c.

Fe

2

N Hexagonal

' m

18
TABLE 2. TABULATION OF SUPERCONDUCTIVE MATERIALS (INCLUDING PROVEN NON- WITH CRITICAL TEMPERATURES AND FIELDS, CRYSTAL STRUCTURE DATA

AND REFERENCES. (SEE IV-1 FOR SYMBOLS)

Material T

c (K) H (oersteds)

o Crystal

Structure

SUPERCONDUCTORS) WHERE DETERMINED,

Ref

.

Ag Al

x A«l.OAl0-lTh

2 Ag0.01 Be0.99

Ag0.05Be 0.95

Ag

?F

2H O

g Ag

7 FO.25

NO.75°10.25

Ag 45

Ge

55 ( DeP° sited U.« U.DD _

4R)

Ag Ge (200-600A)

Ag In

2 Ag Mn Stir, Q

, Te ^x y 0.97-x-y

AS .10Mn

ySn0.97-yTe

Ag Mo

4

S

5

Ag

2Pd

3S

Agl-0Pd0-lTh

2

Ag .05Rh

.04Ti.91

2.2-0.1

1.0-1.5

1.04

1.2

1.2

2.11

1.85-1. 3, (n = 3.5 x lO^ 1

) 1.8-1.1, (n = 2.8 x lO^)

1.7-0.5 (n = 2.2 x 10 Zi

) <0.044 (y = >1000 ppm)

o±dv3

2.0-L.3

8.3

8.9-8.4

1.13 + 0.02K

2.1-2.3-1.1-

1.3-0.7

1.95

Ag Sn q7 Te(n = 10^0. 12-1. l°K(sintered)

x u - y/_x

8 x 10^0.2-2°K (as cast)

Ag Th

2 2.19

Al (See Table 3)

Al (2000-35A)

Al (-500A)

Al 99.999

Al (<100A; Deposited

105K)

Al (15 - 85A)

Al

Al (<40-1000A)

Al (2000-40A)

AlAl

0.95B 0.05Nb

3 Al l-yB yNb

3

1.18-2.16

2.6-2.7

1.16

2.45

3-4.6-3.7

3.74-<1.26

1.25-2.16°K

1.180

19.1

18-19.1-18.5 (aged)

16.3-17-11 (as cast)

HF

C16

C16

Bl

Bl

Rhomb

A13

C16

Bl

C16

A15

A15

0.45

0.45

1235v

1377

1057

1057

1146

1146

1179v

1082v

1377

1246

1246

1193#

1163

1221

1377

1060

1246

1377

1194v

1134

1061#

1062v

1259v

1267

1294v

1302v

1357

1360

1360

See comment bottom page 2.

19
Material T

c

(K) H (oersteds)

o

Crystal

Structure Ref.

Al. Be Nb, 1-y y 3

Al 0.95Be0.05Nb

3

17,3-19.6-13 (aged)

16.5-18-13 (as cast)

19.6

T' (-0.115)

c 0.65

Al, Cr 1-x x A1 2.06CU

Al Cu (750A, alternate 2.6-3.45

layers)

Al. Fe

1-x x

T' (-0.055)

19.0

11.5-9-12.0

Aln Ga Nb- (Annealed) 18.3-18.7-16.1 1-x x 3

V

A1 0.5Ga0.5

Nb

3 Al l-0Ga0-l V

3

A1 0.8Ge0.2Nb

3 Al, Ge Nb. 1-x x 3

16.0

Al. Ge Nb-, (Annealed) 18.4-19.9-13.7

1-x X J r, „ ,„; x=0-0.62)

A10.85Ge0.15Nb

2.85Ta0.15

A1 l-0.6Ge0-0.4Nb 2.85Ta0.15

Al, Ge Th„

1-x x I Al 0.65Ge0.35Nb0-3Tl"3-0 A1

. 65Ge. 35Nb0-3Zr 3-0

HF

Al0.1Ga0.9V

3 13.9,14.9

AL0.3Ga0.7 V

3 13.9

Al 0.5Ga0.5V

3 12.9

Al Gd0-0.009La

3-x

5.97-<l HF

Al

2Gd0-0.004La

l-0. 996

3.20-1.52 HF

Al Gd0-0.009La3-2. 991 6.0-<1.0

Al Gd Lan 2 x 1-x

3.24-0.5

Al Ge (Evaporated, 77K) 5.5

Al 0.65Ge0.35Hf3-0Nb0-3 -3-6-4-20

Al Ge Nb

3 10-17.5

Al 0.16Ge0.05 Nb0.79 20.7 HF

Al. Ge Nb, Ta

1-y y 1-x x 18.5-11

Al 0.75Ge0.25Nb

3 18.3-14.0,

13.3-11.7

HF

Al l-0Ge0-lV

3

20.5

19.5-20.5-18.5 (aged)

0.2-<0.1

<3-6-4-20

<1. 5-10-5-20 (annealed)

<1. 5-6-5-18. 7 (as cast)

-12-12.5-6

A15

A15

C16

A15, A2

A15

A15

v A15_ . II-d.£J A{ 511

C15

A15

A15

A15

A15

C16

A15, A2

1360

1360

1357

1377

1134v

1357

1339

1369

1072

1073

1073

1073

1364

1262

1170

1111

1120v

1173

1276V

1339

1360

1164

1174v

1079

1072

1360

1360

1377

1173

1173

1369

20
Material T

c (K) H (oersteds) Crystal

Structure

Ref.

Al0.7Ge

0.3V3 Al, In Nb- (x=0- 18.4-16.0

1-x x 3 X -,-%v 0.33)

Al 0.046In0.151 Sn .803

Al

:L;

4. 38(Unannealed)

3.652 (Annealed)

3.26

^0.11^0,,89

Al, Mn 1-x X T^(-O.ll)

Al N Data given

Al N 0(24--117A) Data given

Al Nt> 3 18.8

Al Nb

3 9.3-16.6

Al Nb

3 18.6

Al Nb 18.3 (Annealed)

17.4 (As cast)

Al Nb,

Al Nb,

Al Nb,

17.7-15.5, 13.6-11.

18.22 (Max.)

Al Nb

3 17.4, 17.6

Al

.25Nb.75 18.3

Al Nb

3 18.1

Al 0.5

Nb Sn

0.5 « 15.3

Al

1

_ Nb

3Sn _ 1 17.2-15.3-18.2

Al 0-0.1Nb

3Snl-0.9 17.9-18.58-18.1

Al Nb Sn 17.45

Al, Nb_Sn

1-x 3 x 18.4-15.7-18

(Annealed)

Al Nb

2.1 V0.9 12.5 (13.4 Annealed)

A1 Nb

2.7V

0.3 15.4 (16.7 Annealed)

Al 0(15 - 190A) 1.81-2.188

Al Sb (-125 kbar) 2.8

Al l-0Si

0-l V3 -10-16.5

AI0.1Sl0.9V

3 15.1 (16.1 Annealed)

Al0.2S:L0.8V

3 13.6 (15.7 Annealed)

A1 .152Sn .848 3.675 (Unannealed)

o car, /a —«„i„,j\ 3.690 (Annealed)

Al Sn (1100A A^t|r.nate 4.6-5.6

HF

HF

A15

A15

2.0

0.013

A15

A15

A15

A15

A15

A15

A15

A15, A2

A15

A15

1073

1072

1201

1314

1340

1357

1195V

1195

1215#

12767

1339

1176#

1164

1066

1079

1101

1064

1075

1236

1236

1115

1115

1072

1073

1073

1224v

1104

1369

1073

1073

1201

1134v

21
Material T<.(K) ^(oersteds) 1 JgSL T

n Ref "

Al l-0Sn0-lV

3 ~5 .5-6-4

AL

3Th 0.2

Al Th

2 0.09

A1

3Thl-0.8Y0-0.2

Al, Ti 1-x X r;< -0.04)

Al, V 1-x X

T

c<

-0.08)

Al V

3 (Deposited --400°C) 9.6

Al V

3 Al,Yb

Al Zn.Zr

As 0.25Se0.75Y 72-0.

Au0.03Be0.97 1.80

Au0.06

Be0.941 .29(1.

Au0.08Be0.92 1.31

A15, A2 1369

D019 1373

C16 1377

D019 05 1373

1357

1357

A15 1363y

A2 3 1369

C15 06 1372

Ll

2 08 1372

Bl 1219

Hex 1057

Hex 1057

Hex 1057

1057

Hex 1057

1082v

Au„ . Je. oc (slow cool) 0.91

Au

Q 15 BeQ ..(arc melted) 2.79

Au 0.3-0.75Ge0.7-0.25 2 - 7

" 3 - 6

- 2 -3 (200-600A)

Au0.25-0.80Ge0.75-0.20 2 -?-3.6-2.2 U79v

(Deposited ~4K) Au Gen

, (Deposited 3.6 1179v

Au Na

2 C16 0.06 1377

Au Pt> 2 3.10 C16 1377

Au0.1-0.7Pb0.9-0.3 7 - 2

" 1 - 5 U0CK

Au Pt> 2Pd _ 1 3.2-3.9-2.7-3.5-3 C16 1377

Au

0.30Pd0.033Te0.666 2 ' 6 Cub I116

Au

0.167Pd0.166

Te 0.667 4 " 6 Cub U16

Au

.05Rh.04Ti.91

3 -° 106°

Au

0.25

Sb0.756 ' 7 Cub U16

Au Th

2 3.65 C16 1377

Au V

3 (Various heat 2.97,1.84,1.56,-1 A15 1088

treatments)

Au V

3 <0. 015-3. 22 HF A15 1160

B Co

2 C16 0.06 1377

22
Material T (K) H (oersteds)'

o Crystal

Structure Ref

B Fe,

B Mn,

B Mo,

B Mo,

B Mo ,, s Ke 2(l-x) 2x

5.07

5.85

5.1-4.3-5.3-5

B,Mo,S„Sn (Composition 15.0

-* ° 8 approximate)

B M°1.5Ta0.5

B M

°1.75Ta0.25

B N. Nb

x 1-x

B N. V

x 1-x

B Ni„

B Re 0/ , N W„ 2(l-x) 2x

B Ta„

BTa1.5W

0.5

BTa1.25W

0.75 Ta 2-0W

0-2

B W„

B W,

Ba

Ba

1.81

3.05

4.2-6-3.2

0.25

<0.2-0.4-<0.2-3.2

3.18

3.22

Ba Hg 2.32-2.29

Ba

0.1Pb

3Sr0.9

1.75

Be (~90A) ~ 9

Be (condensed) 9.6

(10K; 260A)

B 6.958C 8.042 2.44

B B.944

C 8.056 2.48

Be0.944C °0.056

Be

21Co

5 Be0.92Cu0.08

0.84

Be0.89Cu0.111.11

Be 0.89Cu0.11 0.44

Be0.858Cu 0.142 0.56

C16 0.06 1377

C16 0.06 1377

C16 1377

1105

C16 1377

1309

C16 1377

C16 1377

1238

1238

C16 0.07 1377

C16 1377

C16 0.06 1377

C16 1377

C16 0.06 1377

Cl6(x > 0.6) 1377

1105

C16 1377

0.017 1214

0.014 1233

B2 1232

Tet 1372

1327v

1178v

A2 1057

A2 1057

D8

2 0.45 1057

0.45 1057

A2 1057

A2

A2

1057

1057

1057

23
Material T

c (K) H

o (oersteds) Crystal T, Ref

Structure n

Be0.95Fe0.05

Be0.977Fe0.023

Be0.95Ir0.05

Be

21Ni

5 0.72,0.78

Be0.96Nl0.04 0.76

Be0.934Nl0.066 0.88 (0.66 slow cool)

Be0.9Ni0.1 0.58

Be 0.9Ni0.1 2.38,2.45

Be0.95° S 0.05 0.57

Be0.95

Pd

0.05

Be0.95Pt0.05

Be0.95Re0.05 9.5

Be0.95Rh

0.05 Be0.95Ru 0.05 1.48

Be Ta

2

D8

2

A2

C16

Bi (Condensed at 2K) 6.1

Bi (Ne,Xe) Dep. 10K 5.8

Bi (-15-15A) -2—5°

Bi

Bi (0-30 kbar) ~7 (Bi III)

~4, 8.0-8.2

Bi (-1100A; con- 6.11

densed 1.5K)

Bi,,, , Cd/rw . 0.53 60w/o 40w/o

Bi In

2 5.6 870 + 10

Bi In

x Bi0.025In0.975 4.07-3.47

(0-18 kbar)

Bi

3 In

5 -4.2

B10.02In0.98 3 ' 83

Bi0.0108 In0.9892 (2000A) OT

Bi0.0043 In0.9957 (2°°°A)

Bi Li 2.455 Ll,

Bi Pb

x Bi

Q 3PbQ ? 8.63 HF

o

0.45 1057

0.45 1057

0.45 1057

1057

1057

1057

1057

1057

1057

0.45 1057

0.45 1057

1057

0.45 1057

1057

0.06 1377

1218v

1229V

1259v

1264

1282

1136v

1204

1198 #

1235 v

1247

1112

1121

1089v

1089v

1351

1235 v

1318

24
Material T

c (K) H (oersteds)

Bi

Q -Pb„6

(I n porous glass)

Bl0-0.565Pb

l -0.435

Bi

Q

c 6P b ap (32A, porous glass)

Bi

Q

A Pb

o a (32A, porous glass)

Bi

Q oPb .. (32A, porous glass)

Bi Some data 0.1Pb0.9

Sl O-0.11Pbl-0.89

Bl0-0.02Pb l-0.98

Bl 25-63w/oPb

75-37w/o

T' (+0.39)

T' (+0.07)

c '

II Pb Tl T'(-0.01+0.02)

0-0.025 1-0.975 0-0.025

Bi0-0.4Pb

l-0

Tl

0-l

Bi0.6Sn0.4

7.36-1.2

(25 katm, 7.0

metastable)

Bi Sn (25 katm, 7.88

metastable)

Bi

Q 5 Sng (25 katm, 7.2

metastable)

Bi

Q 4 SnQ 6 (25 katm, 7.34

metastable)

Bl0.009Sn0.991

Bl0.005Sn

0.995

3.700

(2000A)

Bi

2Te

3 (n = 1.5 x 10®)

Bi 9Te~(70 - 100 kbar) 4.3-3.6

z tn = 1.5 x 10 8

) Bi Te Q (65-75 kbar) Q 1.6-3.0

1 J (n = 1.5 x 10 s

) Bi

2Te

J (80 kbar)

5 x 10°)

20, Bi Te Tl (n=6x!0 iu

)

Bl

0. 55-0. 62

T1

0. 45-0. 38

C

3Ce0.2

Th

l.i

2.85

0.14

5.6-6.0

HF

HF

Crystal

Structure Ref

Cub

Mono

Rhomb

D5

1319

1288

1045

1045

1045

1126v

1133

1165

1102

1165

1308

1091

1084

1091

1091

1153

1089v

1280

1280

1280

1280

1139

1264

1222

C

3Dy0.2Th1.8

c

3Dy04Th

C-Er Th

C

3Er1.2Th0.8

C

3 Er1.4

Th0.6

C

3Er1.6Th0.4

C

3Er0.1Th1.9

Magnetic

Magnetic

4.6

Magnetic

Magnetic

Magnetic

6.8

D5.

D5

D5

D5

D5

D5

D5

1222

1222

1222

1222

1222

1222

1222

25
Material T

c (K) H (oersteds) Crystal

Structure

Ref

C

3Er1.8Th0.2 Magnetic

C

3Er0.2Th1.8

8.2

C

3Er0.4Th1.6 8.2

C

3Er0.6Th1.4

8.1

C

3Er0.8

Th

1.2

7.0

C

3Gd0.2Th1.8 Magnetic

C Hf Magnetic

C 0.1-0.35Hf N0.9 -0. 65 8.5-4.9

c o-i

Hfo-iNi-oNb

i -0 14.9-15.5-12.7

C

3H°0.8Th1.2 Magnetic

C

3H°0.6Th1.4

5.2

C

3Ho0.4Th1.6 5.5

C

3H°0.2Th1.8

5.4

C

2La

C 1.58La 9.6

C 1.35La 11.0

C

l 3La 4.8

C

l 3La 8.3

C 1.45La0.1Th0.9

C 1.45La0.3Th0.7

C 1.45La0.5Th0.5

C 1.5La0.8Th0.2

C 1.35La0.9Th

0.1

C 1.3-1.6La0.9Th0.1

C 1.2-1.6La

0.8Th0.2

C 1.3-1.5La0.7Th0.3

C 1.45La0.3

Th

0.7

C 1.45La

0.5

Th0.5

C 1.45La0.1Th0.9

C 1.6La0.7Th0.3

C 1.8La0.8Th0.2

C

3Lu0.8Th1.2

10.2

13.4

14.2

14.1

13.7 (11.3 annealed)

12.7-12.9

10.6-14.3

12.3-13.2

11.1

D5 t

D5

D5

D5

D5

D5

D5

Bl

D5

c D5

D5

c D5

c

Cub

Cub

Cub

Cub

Cub

Cub

Cub

Cub

Cub

Cub

Cub

Cub

3.9

3.9

3.9

3.9

3.9

11.6 D5.

1222

1222

1222

1222

1222

1222

1238

1238

1238

1222

1222

1222

1222

1148

1148

1148

1148

1148

1148

1148

1148

1148

1148

1148

1148

1148

1148

1148

1148

1148

1148

1222

26
Material T (K) H (oersteds)' Crystal

Structure Ref

C

3Lu0.6Th1.4

C

3Lu0.4Th1.6

C

3Lu0.2Th

l 8

C. Mo

1-x

C. Mo

1-x

C Mo

C Mo

C Mo„

C Mo,

C Mo,

C Mo,

C Mo^

2

c i-oM

2-o

Re

o-i

C n ,N Nb

0. 5 x

C A ,N Nb

0.3 x

C„ „N Nb

0. 2 x

C n .N Nb

0.1 x

C 0.3N

0.7Nb

C 0.026N0.974Nb

C 0-lNl-0Nb

C N Nb

_N

11.7

10.9

10.3

14.3

3.45-5.1

cQ

2.8-5-l.i

14.5-17.8

14-17.8

13-17.5

11-17-16

17.8

17.2-17.3

.Nb Ti Zr, 0.25 0.75 0.85 x 0.15-x

17.7-15.5

C n 0I.Nn ,-Nb1 Zr 0.25 0.75 1-x x

0.25 0.75 1-x x

C N Nb Ti w x y z C 0.15N0.85Nb

0.85TixZr 0.15-x

C n ,,Nn

-,,.Nb

1 Ti 0.25 0.75 1-x x

C n „,Nn 7 .Nb1 Ti

0. 25 0. 75 1-x x

17.6-11.5

17.6-6.3

> 17.5

17.5-14.7

17.6-18

17.6-17.8-16

HF

HF

HF

HF

C

0. 75-0. 70N

0. 25-0. 30

Nb

0. 75-0. 70Tl

0. 25-0. 30

C 0-lNl-0Nb

0-l V

l-0

C 0-lNl-0Nbl-0Zr0.1

c i-oN o-iNbo-iTi i-o

1.7- i-<2. 3-11.1

14.9-16.3-

14.3

14.9-17.8-

<2.5

D5

c D5

c D5

c Hex

Cub

Hex

Ortho

Hex

Hex

Ortho

Hex

Hex

Bl

Bl

Bl

Bl

1222

1222

1222

1132

1132

1036

1098

1132

1132

1132

1132

1098

1366

1234

1234

1234

1234

1234

1234

1038

1038

1238

1238

1238

1238

1238

1238

1238

1238

1238

1238

1238

27
Material T

c (K) H (oersteds) Crystal

Structure

Ref

VlNl-0Nb0-lV

l-0

C 0-lN

l-0Nbl-0Ta0-l

C 0-lN

l-0Nbl-0

c r> o?Nn,,-Hf Nb. 0.25 0.75 x 1-x

0.25 0.75 x 1-x

C 0-lN

l-0Ta0-l Vl-0

C 0-lN

l-0Ti0-l Vl-0

14.9-<2.5

14. 9-16. 5-10.

2

14.9-18.0-11

17.6-8.5

17.6-12.8

8. 7-<2. 3-10.0

8.7-<2.3

C 0-1N

1-0V 8.7-9.7-<2.3

C Nb HF

C Nb >11 HF

C Nb

C Nb 7- (11 Annealed); HF

>11

C Nb, x 1-x

<2.5-9.6

C Nb0.9-0.5V0.1-0.5 5.7-<~2

C

3Nd0.2Th1.8

'

C

3Pr0.2Th1.8

C

3Pr0.4Th1.6

C

3Sc 1.4

Th

0.6

5.4

C

3Sc0.8

Th1.2

6.0

C.Sc Th. 7.1

C

3 S °0.8Th1.2 7.1

C

3Sc 0.6

Th

1.4

7.2

C

3Sc 0.4Th1.6

6.8

C

3Sc 0.2Th1.8

6.7

C Ta

C Ta 10 HF

C

3Tb

0.2Th1.8 Magnetic

C Th. x 1-x T' ( -0.095) Data given

C 1.45Th

C 1.45Th 4.1

C Th

C Ti

Bl

Bl

Bl

D5

c D5

c D5

c

D5

c D5

c D5

c D5

c D5

c D5

c

D5

c

Cub

Cub

3.9

3.9

1238

1238

1238

1238

1238

1238

1238

1238

1035

1038

1238,

1035

1244,

1038

1345v

1238

1222

1222

1222

1222

1222

1222

1222

1222

1222

1222

1238

1244

1222

1291

1148

1148

1148

1238

28
Material T

c (K) H (oersteds)o Crystal

Structure Ref

C Ti0.4-0. 7^5.6-0.

3

C V

C 0.87-0.76V

C 0.87V

C 0.84V

C 0.81 V

C 0.76V

c w„

c w„

c w„

c w„

C 0.55

W

.45

C 0.50W

.50

C 0.46W

.54 C W

c w

2

c w

2

C Zr Ca (99. 5%)

Ca

Ca Hg

Ca Hg

3 Ca Hg

5 Ca Pb

3 Ca0.6Pb

3Sr0.4

Ca0.55-0Pb

3Sr0.45-l

Ca

l-0.7

Pb

3Sr0-0.3

Ca Sr _ _ 3Pb

3 Cd

Cd

Cd (Deposited <2K)

Cd

Cd In, x 1-x

Cd0-0.045Inl-0.955

2.85-3.05

3.05-3.35

2.4-4.05

3.1-3.90

8.1

10.0

9.0

3.0

3.6

1.6-<1.25

1.6-1.3

1.7-1.5

0.84

1.16

1.47-1. 88

0.08-1.0

0.08-1.0

0.52

0. 79-0. 91( disordered)

0.53-0.59(annealed)

0.52

T' (-0.17)

c

~2 1238

1238

1332 #

0.03 1114

0.03 1114

0.03 1114

0.03 1114

Hex 1223

Hex 1223

Ortho 1223

Ortho 1223

Al 1036

Al 1036

Al 1036

Bh

0.3 1037

Hex 1132

L '3 1036

1238

0.017 1214

0.014 1233

B2 1232

1232

1232

Ll 2 1245

Tet 1245

Tet 1245

Ll

2 1245

Ll

2 1245

1166#

1267

1310v

A3 1340#

1184#

1086,1090

29
Material T

c (K) H (oersteds)

o

J Crystal

Structure

Ref

Cd0.50Mg0.50

Cd0.60Mg0.40

Cd0.70Mg0.30

Cd0.75Mg0.25

Cd0.80Mg0.20

Cd0.86Mg0.14

Cd0.90Mg0.10

Cd0.96Mg0.04

Cdl-0.6Mg0-0.4

Cd0.20Mg0.80

Cd0.40Mg0.60

Cd Mo S

6 Cd0-0.025Pb l-0.975

Cd Tl. x 1-x

Cd Tl, X 1-x

rH°-2

Zz£- 8 Cd0. 02^*0. 98 Cd0.002Zn

.998

0.016

0.105

0.160

0.185

0.145

0.138

0.24

0.52-0.138-0.185-0.016

2.4-2.3

T' (-0.07)

c

V / Data given

T' (-0.027)

c 0.628

0.675

0.780

Data given

Ce0-0.1 In La3-2.9 9.45-<l

Ce 0.04-0.08 In La2.96-2.92 7-2-2.2(0.23 kbar)

HF

Ce0-0.021La

l -0.979 4.5-2.7 HF

Ce0-0.02Lal-0.98 4.87-2.4 HF

CeO-0.02Lal-0.98

6-2.9

Ce0.01La0.99 3.82 73

Ce Os,

Ce l-0.80Tb0-0.20Ru

2 6.2-6.4-2.4

C °0.98Cr 0.02U T' (-+0.05)

Co0.98Fe0.02U T' (+0.1)

Co l-0Fe0-l Zr

2 5.0-0.2

Co0-0.06Ga

4Mol -0. 94 8.0-6.5

Co0.98Mn

0.02U T' (+0.2)c Co0.92Mn0.08U

6 -2.2

Ortho 0.015 1340$

Ortho 1340#

1340#

Hex 1340#

Hex 1340#

Hex 1340#

1340#

1340#

1340

Hex 0.015 1340 #

0.015 1340#

Rhomb 1163

1165

1108

1095

1052

1052

1228

1137

1265

1358

1358

1365

C14 1375

1113

1181

1181

C16 1377

1295

1181

1181

30
Material

T

c (K) H (oersteds) Crystal

Structure

Ref

Co0.975M°0.025U

a

(500-700A)

Co0.98

Ni0.02U

r (-0.35)

T' (—0.05)

c Co Pb. x y 1-x-y

Co0-0.03Pbl-0.97

(500-700A)

C °0.05Rh0.04

Ti0.91 Co0.97

Rh0.03U

Co0.96M°0.04U

6 Co

l-0

Ni0-lTa

2 C 8.85

Nd.l5

Zr

2 Co

0-l

Nil-0Zr

2 Col-0Ni0-l Zr

2

Co0.94Rh0.06U

6 Co Sc

Co Sc 0.125Zr1.875

Co Sn„

7.2-~2

7.2-4.4

4.0

T' (-0.4)

c -1.5

1.2-0.6

6.0

5-6.0-1.5-1.6

5.1-5.9-1.1-1.6

dtnori ~2.0

2.89

Co0.02

Sn

0. 98Ta

3 4.1

Co Ta„ 0.82

Co Ta175Zr

.25 0.90

Co U -1.5

CoU6 -2.2

Co Zr„ 5.0

Co Zr 5.0

Cr0-0.6Hf V

2 -1.4

9.2-9.9-9.4

Cr Pb. 1 [500-700/ 7.2-2.4

x y 1-x-y

Cr0-0.008Pbl-0.992 (500- 7-2-3

700A) Cr Pd, Sb

x 1-x

Cr

0. 62-0. 77 Re

0. 38-0. 23 Cr

0.38Re0.62

Cr0.05Rh0.04Ti0.91

HF

1.66-<0.1

4.10-1.3

4.10 (3.37 Calorimetric)

3.75

Cr

0. 103-0. 244Ti

0. 897-0. 756 3.85-4.45-3.6

C16

C16

C16

C16

C16

C16

C16

C16

C16

C16

C16

Cub

0.07

0.07

Cr0.15Tl-0.8S Cs 0,W

x 3

Various vs Anneals

1181

1181

1053v

1053v

1060

1181

1181

1377

1355

1355

1377

1181

1377

1372

1377

1362

1377

1377

1181

1181

1355

1377

1323

1053v

1053v

1296

1096#

1096#

1060

1289

1290

1080

31
Crystal T Ref Material c o _ * n Structure

Cr0-0.5V

2-1.5Zr

T

c (K) H

c (oersteds)

8.5-8.7-8.2

0.85-<0.037 HF

3.4-2.0 HF

4.5-1.4 HF

Cr Zn

1 _ 0.85-<0.037 HF 1322

Cs F Li 0- W 3.4-2.0 HF 1242

x x+y y 3-x-y

Cs F 0, W 4.5-1.4 HF 1242

x x 3-x

Cs

x 3W 1080 Cu 1055

Cr Ge (Deposited ~4K) 1.8-3.3-1.8 1179v

Cu

Q 5Ge

Q 5 (Deposited ^4K) 3.3 1179v

l-.70Ge .62-

(200-600K)

Cu .38-.70 .62-.30 1-8-3.3-2.0 1082v

Tet 1374

Rhomb 1163

1374

C16( X > 0.6) 1377

1218v

Tet 0.05 1374

1060

1354

C2 1130

1218?

C16 1377

1187

1324

1242

F K 0- W 1.9-2.1-0.8 1242

x x 3-x

F Li o Rb W 4.0-2.1 HF 1242

x+y y 3-x-y x

F 0, Rb W 3.7-0.9 HF 1242

x 3-x x Fe0-0.08Ga

4M°l-0.92 8 -°- <l 1295

Fe0-0.04Ga

4M°l-0.96 8 -°" 4 - 2 HF 1295

Fe Ge C16 0.07 1377

Fe

-iNio-l Zr2 0.3-2.5-1.6 C16 1377

Fe0- 0UPb

l- 989 (5 °°- 7 - 2

" 2 - 7 1053V

u .uij. i .^o^ 70QA) Fe0.05Rh0.04Ti0.91 3 - 9 106°

Fe Sn

2 C16 0.07 1377

32

Cu

4K S 3 1.4

Cu1.5M°4.5S

6 10.9-10.8

Cu

3Na2

S 3 0.3

Cul-xNi

xZr

2 1.7 (Max.)

Cu0.1Pb

0.9 ( D ^P° sited 6.5

Cu.Rb S4 3 C b.05

Rb

J.04

T 0.91 2.5

Cu S 1.651 + 0.

Cu S„ 1.56

Cu0.1 Sn

0.9

(De^)sited 6.8

Cu Th

2 3.44

D3.61

Th -2-8.35

Eu0.012La0.988

2.15

F 0.12K

0.1Ll0.02°2.88W 1.1
Material T

c (K) H (oersteds)' Crystal

Structure

Ref

Fe Sn (Superimposed)

Fe U,

3.15-1.5

Fe Zr

2 0.17

Ga(Deposited 10K) 8.3

Ga (p) 5.90

Ga

Ga (Deposited 4.2K) 6.6

Ga (Deposited 4.2K) 8.5

Ga (Deposited Low Temp) 6.4-6.8,7.4-8.2

Ga (Condensed 1.5K; 8.56

-1000A)

Ga (o) 6.4

Ga (v) (Supercooled) 6.9

Ga (<100A) 6.72

Ga (p) (Gall) 6.0

Ga (£) (Supercooled) 7.85

Ga (v) 7.9

Ga, Ge Nb Q 1-x x 3 16.05-12.2

Gal-0Ge0-l V

3 12-14-6.05

Ga0.8Ge0.2V

3 13.6

Ga Hf

2 0.21

Ga0.8 In0.2V

3 <12 ,12.7 (annealed)

Ga0.03Mg0.97

950

560

815

Ga4Mn0-0.01M

°l-0.99

Ga

4Mn0-0. 01

2

M0 1 -0.988

Ga.Mo

4 Ga

4M

°l-0.96Nb0-0.04

Ga

4M°l-0.96Nb0-0.04

Ga

4M°l-0.96Ru0-0.04

Ga0.19Nb 0.81

Ga0.245Nb0.755

Ga0.30Nb0.70

Ga0.32Nb 0.68

Ga Nb~

Ga Nb,

8-4.0 HF

8-1

8.0 HF

8.0 HF

8.0-8.0

8-7.7

13.3 HF

20.2 HF

16.3 HF

20.2 HF

15.5-12. 1 ,11 .5--10.

C16

A15

A15

A15

C16

A15

0.013

A15

Ga

0.37

Nb

0.63

Tet 6.0

1141v

1152

1377

12297

1263#

1267

1327v

1327v

1171v

1136v

1122v

1047

1062V

1046

1048

1122v

1072

1369

1073

1377

1073

1340

1295

1295

1295

1295

1295

1295

1339

1339

1339

1339

1164

1066

1190

33
Material T

c

(K) H (oersteds)

o Crystal

Structure

Ref

Ga

0.32Nb0.68

Ga0.24Nb0.76

Ga

0. 215-0. 32Nb

0. 785-0. 68 Ga Nb.Sn, (annealed) 18.0-18.3-16.1

x 3 1-x

20.3

20.3

20.3-11.0

Ga Nb2.4V

0.6

GaNb1.5V

1.5

12.5, (13.0 annealed)

Ga0.9Si0.1V

3 13.7, (14.7 annealed)

Ga

Q g Si „V, (annealed) 14.8

Ga0-0.3Si

l-0.7

V

3 Gal-0Sn0-l V

3 Ga Th„

Ga0.265V0.74

Ga0.192V

0.81

Ga0.243V0.76

Ga V,

Ga V.

Ga V.

Ga V.

16.95-12.0,17.0-13.3

12-3.8

15.4 annealed,

14.2 as cast

9.40,(9.10 as cast)

15.2, (13.6 as cast)

12.0

14.6-12.3,11.2-9.9

14.4 HF

13.65, (14. 5 annealed)

Ga

3V

Ga Zr„ 0.38

Gd In La_

x 3-x

8.5-2.7 HF

Gd In La.

x 3-x

Gd0-0.006La

l-0. 994

4.5-2.3 HF

Gd0-0.007La

l-0. 993

6-3.2

Gd0-0.005Lal-0. 995

4.87-2.5

Gd0.08La0.92Sn

3 4.3 HF

Gd0.067La0.933£ n- 4.6 HF

Gd La, Sn.

x 1-x 3 6.4-<l

Gd0.002Th0.998

0.714 73

Gd0.001Th0.999 1.107 123

Ge (115 kbar) 5.35

Ge Hf

2 Ge Nb Sn. (annealed) 18.0-18.1-13.2

x 3 1-x

A15

A15

A15

A15

A15

A15

A15

A15

A15

C16

A15

A15

A15

A15

C16

LI,

LI,

C16

A15

12

0.06

0.05

1190

1190

1190

1072

1073

1073

1073

1073

1073,

1369

1369

1377

1343

1343

1343

1369

1164

1075

1073

1066

1377

1125

1065

1265

1358

1358

1329

1329

1131

1123

1123

1068#

1377

1072

34
T (K) H (oersteds) Crystal T

n Ref Material c o Structure

Ge

( ).l Si0.9

V

3 Ge L-0Sl0-l V

3 Ge

L-0ba0-l V3 Ge Th

2 Ge V

3 Ge V

3 H -0.147Nbl-0.853

H

XNb

3Sn

H

xNi0.05Pd

H

xNi0.015Pd

H

73Pd

H

81Pd

H

87Pd

H

3 63Th

H

3 6-3.65Th

H

o 32V0.68

Hf (100-700A)

Hf

2Ir

14.4, (16.4annealed)

6.05-16.5(Anneal6d)

6.05-3.8-<3.8

6.05

5.9-6.2,6.35-6.25

9.30-6.75

4.2-18.2+

3-<1.5

5.5-<1.5

2.5-<1.5

4.3-1.7

-2-8.35

8.05-8.35 HF

Hf Mo0-0.44V2-1.56 9.2-9.3-8.8

Hf N Hfg^N Nb

1

_ Q 14.6-5.3 HF

Hf0.1-0.5Nb

0.5 or 0.7 **

Hf Nb0-0.5V2-1.5 9-2-10-9.5

Hf

0.36Nb0.62

Zr0.02 7 ' 75 (Quen=hed)

Hf0.36Nb 0.62Zr0.02 8.1 (aged)

Hf

2Ni 0.87

Hf Re

2 5.2

Hf

2Rh 2.02

Hf

2Rh 1.98

Hf Rh 1.73

Hf

0. 99-0. 80

Rh

0. 01-0. 20

1 - 3

" 1 - 98 (annealed)

Hf

0. 99-0. 80

Rh

0. 01-0. 20 1-7-2.4-1.98 (quenched)

35

A15 1073

A15 1369

A15 1369

C15 0.07 1377

A15 1369

1164

Cub 1208

A15 1077

1311

1311

1.25 1311

1311

1311

1187

1117

4.2 1144

1.3 1273v

E9

3 1.6 1299

1323

1238

Bl 1203

1092

1323

1334

1334

C16 1377

C14 1149

E9

3 1299

E9

3 1058

1058

1058

1058
Material T

c

(K) H (oersteds) Crystal

Structure

Ref

Hf

0.05Rh0.04Ti0.91 1.7

Hf

2Si

Hf Ta0-0.5V1-1.5 9.2-9.4-9.0

Hf Tc

2 5.6

Hf V

2 9.2

Hf V

2<3

9.2

Hf V

2 Hfl-0V

2Zr0-l

9.2-10.05-8.5

Hf0.5V

2Zr0.5

10.1

Hg (HgBr„ added). , 3.96-4.06-1.7

HF

Hg

Hg

Hg (In asbestos)

Hg (In asbestos) 4.3

Hg (In NaX Zeolite)

Hg (<*) Hg In T' (-0.07 +

c

v 0.03)

HSl-xIn

x r (-)

Hg Mg

2 0.48-0.43-0. 37

Hg

2Mg5 Hg Mg

3 0.16

Hg

3Mg

5 48-0.44-0.33

Hg Mg 1.39-1.34

Hg

2Mg 4.0-3.4

Hg0-0.03Pbl-0.97 T' (-0.06)

Hg0.8-0Sn0.2-l

4.5-5.1-3.7

HgJD.lSn0.99

3.646

Hg Sn Tl °x y Hg

xTl l-x

Hg

xTl l-x

T' (-0.029)

c

Hg, Zn °l-x X r (-)

In 3.40

In 3.39

In (<100A) 4.13

HF

283 264

C16

C14

C15

C15

C15

Complex

D0 18 D8

8 B2

Cllb

0.07

0.3

1060

1377

1323

1149

1323

1189

1189#

1323

1189#

1083v

1250#

1267

1281

1284

1285

1067

1090

1097

1232

1232

1232

1232

1232

1232

1165

1304

1153

1108

1108

1095

1097

1140#

1074#

1062v

36
Material T

c

(K) H (oersteds)' Crystal

Structure

Ref

In (See Table 3 ) In (1000-100A) 3.5-3.9

InIn

In 3.50-3.05

In (150A particles) 3.7

^O-l^l-O 3.2-4.6 (

HF

In La,

In La, (Quenched)

In LaQ In-La

In0-0.22Lal-0.78Sn

3 In0.18Mg0.82

3.15-4.17 (annealed)

9.45

9.0

9.2

6.5-<l

0.945 0.055

In0.22Pb0.57Sn0.21

In0-0.11Pbl-0.89

In0-0.028Pbl-0.972

In Pb. x 1-x In Sb

In Sb (II)

In Sb (III)

In0,25Sb0.75

In0-0.035Sb0-0.035Snl-0

In0.2Si0.8V

3

HF

In Nb-Sn.. (x=0-0.33)

x J J-~x 18-18.05-15.1

In0.03-0.21Pb0.97-0.79 7.15-6.90

In0.30-0.80Pb0.70-0.20 6.78-5.53 815-610

In0.087Pb0.913 7.035,7.042

Inl-0.9Pb0-0.1 3.39-4.32 264-442

Inl-0.87Pb0-0.13 280-565, HF

In

0. 96-0. 90Pb

0. 04-0. 10 HF

In0.955Pb0.045 3.69 HF

In0.95Pb0.05 3.73

Inn OACPbn ncc 3.83

HF

T' (-0.2)

c

v '

T' (-0.085)

c Data given

-3.4 HF

2.0

4.1 (37,52 kbar)

4.1

0.372-3.66-3.74

.9316.2,(16.8 annealed)

Ll

2

Hex

A15

1.0

0.013

Ortho

Tet

Cub

A15

1207V

1267

12687

1278v

1349

1049

1137

1065

1125

1240

1183

1340#

1072

1225

1260

1269

1074#

1029,

1269

1074

1140#

1140#

1140#

1041

1133

1165

11267

1129

1202

1202

1116

1050

1073

37
. i „, /„s H (oersteds) Crystal T Ref Material V^ Structure

In .017-.075Sn .983-.925 3.620-4.885

In Sn

x Inl-0.9 SnO-0.1

In

0. 06-0. 01 Sn

0. 94-0. 99 3.645-3.625- HF

3. 64 Inn Sn

1-x X In Th

2 Ini-oT1 o-i

3.40-3.2-2.52-

3.64-2.33

Inl-0.96Tl 0-0.04 3.40-3.27

In. _, _ 71 I1. .. _ _ 3.27-3.19 0.96-0.71 0.04-0.29

In

0. 73-0. 63T10. 27-0. 37 HF

In. n .-Tl. n ,-«., . ,* 2.9-4.0-2.4

0-0.45 l-0.55(quenched)

In0.1-0.45Tl 0.90-0.55 2.9-3.7-2.5

In Tl. x 1-x

Ir Mo (Disordered) -1.85

Ir Mo 8.8

Ir 1.15Nb

0.85

4 - 6

Ir1.05

Nb0.954 - 75

Ir 2.76NbPt0.24

Ir 2.55

Nb Pt

0.45

Ir0.45Nb Pt 2.55

Ir _ 1 Re

1

_ (Deposited 4.2K) 7.5-<1.7

Ir l-0.58Rh0-0.42 103-0.005

I 5.05R&.04T b.91

4.0

Ir V

Ir V

Ir

3 V

l0.9M°°3

K~0.5M° °3 4.2

K~0.3°3Re 3.6

K~0.9°3Re

x 3 La (11, 000-26, 000K) 5 06-5.50

La HF

1201

1235V

1258 #

1050

1184#

C16 0.07 1377

1270v

Tet 1155 Tet 1155

1155

1156

1156

1108

A3 1039

B19 1039

Ortho 1299

LI

o 1299

Ll

2 1.6 1299

Hex 1.6 1299

D0

19 1.6 1299

1325v

Al 1118

1060

LI

o 1.36 1299

Ortho 1.6 1299

Ll

2 4.2 1299

1.3 1212

Tet 1212

Hex 1212

1.3 1212

Hex 1080

1255v

1265

38
Material VK) ^(oersteds) 1 Crystal T

n Ref

Structure

La(°c) 4.87 1358

La 6.0

La 4.82 1350 La 6.00 1096

La 6.0 La (17. rare earths) T' (+0.2+3.4) La 4.9

La 4.87 798

La

0. 91-0. 951LU

0. 09-0. Cfc9 3 ' 28 ' 4 - 37

La0.98Lu0.02 4 - 643 **

La0.98Lu0.0115Tb0.0085 2.582 HF

La0.98Lu0.01Tb0.01 2 - 108 HF

La Os, 5.9

La 0s

2 ~ 9

La Ph> 3 4.05

La3-2.25Pr0-0.75 8.95-1.24

La S. 8.06

3 4 La 9 S^ (Five transitions vs.

2 3 pressure, temperature)

La S 0.84

La S

2 La, -Se. _(n = 5.5-1 10-1

3-2 4-3^

x 1q21)

La Se 1.02

La„Se. 7.8

3 4

La Si. 75 La Si. 82

La Si

2 La Si

2 La Sn^

La Sn~

La Sn2.3

6.45

6.41 Data given

~ 6.4

La

0.9Sn3Th

0.1 ~7

La0.92Sn

3Tm0.08 5 ' 2 W

La0.84Sn

3Tm0.16 3 ' 3

La Te 1-48

HF

Al 1361

1365

Al 1158#

Al 1182#

1143

Hex 1182#

Hex 1158#

1255v

Hex 1271

Hex 1271

Hex 1271

C14 1375

C15 1376

Ll

2 1240

Cub 1154#

D7

3 1370#

Cub 1279

Bl 1370#

Cub 9 1370

D7

3 1292

Bl 1370#

D7

3 1370y/

Ortho 1.2 1353

C

c 1.2 1353

Ortho 1.2 1353

C

c 1353

Ll

2 1240

LI, 1329

Ll

2

Bl

1131

1329

1329

1329

1370 #

39
Material T

c (K) H (oersteds) Crystal

Structure

Ref

La

3Te4 5.3

La0-lThl-0 1.28-6.0

La0-lThl-0 1.28-6.0

La Tl

3 1.57

La Tl (ordered) 8.95

La0.15Y0.85

La0.35Y

0.65 0.4

La0.48Y

0.52 1.0

Lal-0.6Y0-0.4 4.9-1.3

Lal-0.6Y0-0.4 4.9-1.3

La0.48Y0.52 1.0

La0.35Y 0.65 0.4

La0.15Y0.85

La

2.4Y0.6S 4 4.77

La

2.4Y

0.6

Se

4 3.92

La

2.4Y0.6Te

4 Li S

Li Ti

Li1.0-1.5S Ti

Li0.5-<1.0S

2Til.l

Li0.1-<0.3S

2Til.l

Li

l. 33-0.

8

Tl

l. 67-2. 2°4 Lu S

Lu Se Lu Te

Mg

Mg

Mg

Mg

Mg

MS .9Mo

5.1

S 6 Ms0.93Pb0.07

M60.97Sn0.03

2.0 (incomplete)

10-13

1.5-13.7

0.8-1.1

0.44-0.56

(Predicts v T = 0.012)

c '

2.5-2.4

D7

3 1370#

Cub 1361#

Al 1182#

Ll

2 1240

Cub 1154

Hex 0.1 1350#

Hex 1350#

•< - Sm 1350#

oc- La 1350#

Hex 1182#

(LikeoC-Sm) 1182#

A3 1182#

A3 0.1 1182#

D7

3 1370#

D7

3 1370#

D7

3 1.7 1370#

1.0 1191

1.0 1191

1191

Tet 1.12 1191

Hex 1191

HI, 1305

Bl 1219

Bl 1219

Bl 0.35 1219

1166#

1213#

0.017 1214

0.014 1233

A3 0.004 1340#

Rhomb 1163

0.013 1340

0.013 1340

40
t /v\ u / ». a \ Crystal T

„_. » , T (K) H (oersteds) _

' n _ , Material c

v oj '_ Structure Ref

0.013 1340

0.013 1340

1053v

1054v

1085v

1296

1060

C16 0.07 1377

1085V

1246

1152

1322

1267

1274v

1159

1.3 1212

1298

1081

1298

1298

1298

1298

1325v

1157#

1103

1103

1103

1103

Rhomb 1309

'5.r-0.9-6 «.TM- Rhomb 1163

Mo, ,Ptn , 8.8 A15 1231

3.4 0.6 M

°0-0.01Re l-0.999 1-69-1.70 1257

Mon , aRen to(5000- -9-15 1320v

0.38 0.62 190, 000A)

^O.SS^.IS

Mg0.97 Zn0.03 Mn Pb. (500

X x 1-x

-70QA) 7.2-1.9

Mn Pb. x 1-x (T decreases)

c Mn Pb. x 1-x Mn Pd. Sb

x 1-x

1.66-<0.1

Mn

.05Rh.04Ti

.91 2.4

Mn Sn„

Mn Sn. x 1-x Mn

ySn

0.97

Te 0.187-<0.040

Mn U

6 Mn Zn, x 1-x

0.85-0.12 HF

Mo

Mo (>6000-21,OOOA) 3.3-3.8 Mo 0.899,0.906 98

Mo Na^j

9 3 Mo Nb Data given

Mo Nb (Pressure Study)

Mo0.15Nb0.85 5.30 Data given

Mo0.2Nb0.8 4.24 Data given

Mo0.1Nb0.9 6.38 Data given

Mo0.05Nb0.95 7.84 Data given

Mo_ ..Nb n(Deposited u-i i-u 42K)

6-9

Mo0.05

Nb

0.95 8.0

Mo~0.2Nb~0.8 4.22 HF

Mo~0.15Nb~0.85 5.30 HF

Mo~0.1Nb~0.9 6.38 HF

M°~0.05Nb~0.95 7.84 HF

M°6Pb0.92S 7.5 15.2

Mo c -Pb S, 13.2-12.5

41
Material T

C (K) H (oersteds)

o Crystal

Structure

Ref

Mo, „Re„ .(Deposited 9-9.5-7.5 1-0 0-1 4.2K)

M°0.66Re

0.34

Mo

Q 52Reo 48 (annealed)

Mo0.52Re0.48 Mo Ru. (Deposited

4.2K) l-0lx 0-1

Mo.S Se,

Mo

3S2Se

2 Mo

3Se

4 Mo.S,Sn

Mo S,Sn

Mo

5S,Zn

Mo

0.1Ti0.9

^05R^.04T i .91 M°0.6RU0.4 Mo0.15U0.85

M°0. 16-0. 20U

0. 84-0. 20 M°0-0.5V 2-1.5Zr

11.8

9-9.5-<1.7

3.4

3.3

6-. 3

11.3-10.9

10.9

3.0-2.7

3.3

8.7

2.113-2.133

8.5-9.1-8.4

N Hf

-l Nbl-0

N Nb 16

N0-.186Nbl-.814

9.30-8.58

N Nb

N Nb 2-15.75

N Nb ~15

N Nb 16.17-15.48

N Nb 15.95

N Nb 15.0

N 0.93Nb (Diffusion wires) 16.5

N0.93

Nb

N

0.85-l. 04Nb 14.3-16.5-1

N Nb (2400A) 14.7

N Nb 17.3,15.25

N Nh 0.998 ' °0.002 17.2-17.3

HF

HF

HF

HF

HF

HF

HF

HF

HF

Rhomb

Rhomb

Rhomb

Rhomb

Rhomb

Hex

Cub

Cub

Bl

13257

1331#

1151

1151

13257

1309

1309

1309

1163

1193#

1163

1188#

1060

1033

1152

1252

1323

1238

1196

1208

1234

12757

1038

1107

1079

1044

1070

1070

1070

1174v

1175v

1234

42
Material T

c (K) H (oersteds)'

N0.91Nbl-0.75Ta0-0.25

N "^.o^o-l

N Nb~0.5Ti~0.5

N 0.85-0.95Nbl-0.12Tl0-0,

NNb0.7Ti0.3-xZr

x

N Nb Ti, x y 1-x-y

N Nb 0.92-0.7-0.93 1-0.34

16.5-11.3

14.6-16.5-4.4 HF

-15.5 HF 16.2-17.8-10.5

8817-12.5

Zr 0-0.66

N Nb

l-0V

0-1

N Nb

l-0

V

0-1

N Nb

1

. Zr

Q

_ 1 N Nb Zr, x y 1-x-y

N Ti

N V N Zr

15.5—17-5

/ 16.4-10.5

14.6-2-8

-15-9

HF

HF

Crystal

Structure

Ref

Cub

Bl

Cub

Cub

Bl

1070

1203

1044

1070

1238

1238

1344v

1070

1203

1238

1238

1344v

1238

1 ooo

1238

Na~£ 9°3Re

Nax°3"

Na0.084Pb0.916 Na0.07Pb0.93

Nb

Tet 1.3

0.55

Nb(4, 000-12, 000A) 8.20 + .05 8.97,9.16,9.81

Nb (1500-2000A) 8.2-10.1

Nb 9.30

Nb 9.21

Nb

Nb (100-1000A) 7.5-9.3

Nb

Nb (0-2000A) 9.6-6

Nb (Deposited 700) 9.3

Nb (Deformed)

Nb

HF

550, HF

A2

HF

1212

1080

1312

1312

1197

1199v

1206v

1208

1209

1248

1293v

1326 #

1328v

1345v

1347

1316

43
Material T (K) H (oersteds) Crystal Structure Ref

Nb

Nb

Nb (440-1050A)

Nb

Nb

Nb

9.25 9.20 7.02-8.6

9.21

9.21 9.23

HFHF

HFHF

HF

HF

1211 1298 1251v

1237

1300 1359

Nb

Nb

Nb

Nb

Nb

Nb

9.20

9.25 8.68 9.2

HF

HF

HF

HF

A2

1099#

1142

1135 1157#

1087#

.'147

Nbl-0.875°0-0.125 9.30-7.85

Nb 0s 0.42Pt

2.58 Nb Pt

Nb Pt„

NbPt

1.8

Ru 1.2 Nb Pt 2.58Ru0.42

Nb0.65Pt

3Zr0.35 Nb0.45Pt

3Zr2.55 Nb Rh

3 Nb

1.3Rh

2.7 Nb0.75Rh1.25 2 ' 7

Nb0.85Rh1.15 3 -°° Nb^R^ ^

3.07

Nb0.96Rh1.04 3 - 76

Nb0.05Rh0.04Ti0.91 2 - 4

Nb S

2 (See Table 3

Nb S„ 6.0

Nb S

3Sn 2.75 Nb S

2 5.9 Nb^bQ^Sn^Q 18.2-<4.2

Nb

3Sb0-0.3Snl-0.7 18.2-15.8

Nb

3Sb0.3-0.8Sn0.7-0.2 ".8-<4.2

Nb

3Sb0.8-0Sn0.2-l

Nb Se„ 7.0

Nb Se, 7.1

Nb Se, (0-60 kbar) 6.4-8.8

Nb Se

2 (60-100 kbar) 8.9-8.4

HF

HF

Cub

D0

19 B19

Ortho

Hex

D019 D019 Hex

Ll

2 Hex

Mono

B19

Ortho

LI.

Hex

Tet

A15

A15,s

A15

Hex

1.6

1.39

1.46

1.6

1.6

1.6

1.6

1.43

4.2

1208

1299

1299

1299

1299

1299

1299

1299

1299

1299

1299

1299

1299

1299

1060

1192

1150#

1266

1236

1236

1236

1236

1262

1266

1283

1283

44
Material T

c (K) H (oersteds) Crystal

Structure Ref

Nb Se,

Nb Se

2 (0-17 kbar)

Nb Se„

Nb

0. 317-0. 343Se0. 683-0. 657

6.95

6.9-8.5

6.8

7.0-6.8,

6.8-4.1,

6.8-2.2

Nb Se Sn

Nb

6Sn

5 Nb

3Sn

3.02

<2.8

18.2

Nb

3Sn (See Table 3)

Nb-Sn

Nb0.9-0.6Sn0.1-0.4

Nb

0. 75-0. 84Sn

0. 25-0.16

Nb Sn.

HF

18.25-17.7, 13.9-11.8

17.9 (maximum)

Nb -Sn (Pressure Study) 18.02

Nb Sn Nb

3Sn

Nb

3Sn

Nb Sn

Nb

.75Sn.25 Nb

0.8 Sn0.2

Nb Sn, x 1-x

Nb Sn, x 1-x

Nb

3Sn

Nb

3Sn

Nb

3Sn

Nb

0. 75-0. 82Sn0. 25-0. U

Nb

(l-x)§

n Ta

3x

Nb,, .Sn Ti18.0

18.0

17.83

18.2

16.7

•(l-x)§ n

Nb

(l-x)3Sn V

3x Nb

(l-x)3Sn Zr

3x Nb~0.2Ta~0.8

Nb „ Ta -0.05 -0.95

HF

5350

HF

18.31-8.2 HF

(vapor deposited)

17.9-18.1-14.3

17.9 (maximum)

17.9 (maximum)

17.9 (maximum)

4.64 HF 4.55 HF

Hex

Hex

Tet

A15

Tet

A15

A15

A15

A15

1317

1321

1094

1094

1150#

1210

1236

1164

1066

1093

1063

1079

1075

1239

1253#

1346#

1064

1064

1059

1056

1051

1040#

1034

1167

1066

1066

1066

1066

1103

1103

45
„ _ . , T (K) H (oersteds) Crystal T „ , Material c

v o

v

' „_

J

. n Ref Structure —

Nb

1

_ Ta

Q _ 1 9.18-4.33 150-61.2 ( 103 Amp ) Nb0-0 16Tal-0 84 4.480-4.465-4.670 795-882, HF

NB.016T8.984 "

Nb0.025Ta0.975 4 ' 465 8 °°' W

Nb

0.04Ta0.96

4 - 47 817 ' HF

Nb

0.05Ta

0.95 HF Nb0.08Ta0.92 4 - 540 882 ' ^

Nb

0.16Ta

0.84 HF Nb

0.97

ic

0.03 7 ' 6

Nb0.93Tc 0.07 7 -° A2

Nb0.69Tc 0.31 A2

Nb

0.42Tc 0.58 10 ' 9 Al2 > A2

Nb0.24Tc 0.76 12 - 9 Al2

Nb

0.06

Tc 0.94 A3

Nb0.03Tc 0.97 12 ' 8 A3

Nb

0.05Ti0.95 9 ' 38 HF

Nb

?5Ti

25 9.93 HF

Nb

0.75

Ti

0.25 9 - 8 HF

Nb0.9Ti0.1 9 - 2 HF

Nb

.90Ti.10

9 ' 61

"*" Nb

.95Ti

.05

9 ' 41 W

Nb0.95Ti0.05 9 - 2 HF

Nb Ti, 9-10.3—5

x 1-x

M^.15T 6.40Z b.45

HF

Nb

0. 18-0. 22U

0. 82-0. 78 2-009-2.025

Nb, _Vn

. 5.17-4.03-9.18 106.3-76.2-150 ( 103 Amp ) 1-U 0-1 m

Nb0-0.5V 2-1.5Zr 8.5-9.7-9.2

Nb Zr(3000-4000A) 1.6-9.3 HF

Nb Zr (Pressure study) 10.75 HF

Nb 68Zr

3

„ 10.55(10.05 before draw down)

Nbo-iZri-o

(DeT^d 3

" 6

Nb

0.38Zr0.62 8.7

Nb

0.75Zr0.25 11.0

Nb Zr

46

1307#

1356

1356

1356

i 1356

1330

1356

1356

1147

1147

2.0 1147

1147

'

1147

1147

1147

1216

i 1241

1371#

1371#

q 1241

5 1241

.1 1371#

13447

(A 3 1205

(X£ 36 bs: 1252

1307#

1323

1275v

1301

1313

1325v

1157#

1157#

1081
Material T

c (K) H (oersteds) Crystal

Structure Ref

Nb0.60Zr0.40

Nb Zr. x 1-x

Nb

0.85

Zr0.15

Nbl-0.75Zr0-0.25

N i.05

R u.04T

6.91

Ni Ta

2 Ni Zr

2 Ni Zr„

10.58-10.05-10.75

9—11.5-6

10.8

9.2-10.8-8.3

3.5

0.90

1.6

1.58

°(.l) P k.9

Si (.l)<

D

!P-2K, 6 - 5

0,Rb W

3 x 0,Rb W

3 x

°3Rb0.26-0.33W

2Re

1.97-1.88

6.40-6.14, 6.55-5.45,

2.74-2.36

1.6-2.0

C16

C16

C16

Hex

HF

2Re

°1.24Ti

°0.85-1.25Ti

U Ti 0.86-0.91 i

°S 0-0.08Rel-0.92

0s

15Rh0.5

Os

0. 38-0. 33Rh0. 62-0. 67

°8.05Rb\04T 0.91

2.0

<1. 3-2.0

1.69-1.93-1.88

0.09

0.095-0.018

3.5

3 Sr Ti (Pressure study)

P 0.4S 0.6Y

Pb(~15-100 , s A)

Hex

Al

Bl

-2-7.2

Pb (Deposited at 2K) 7.2

Pb

Pb

Pb(900, 3300A) 7.26, 7.23

Pb

Pb (<100A) 7.22

Pb (500-12, 000A)

HFHF

Data given

Pb Mo

6

S

y Pb Pd„

Pb Pd

11.1

3.01

Ll

2 C16

1.3

1.3

1.3

0.36

0.10

1333

1344v

1352#

1352#

1060

1377

1355

1377

1218v

1080

1080

1186

1212

1212

1272

1272

1272

1257

1368

1118

1060

1127

1219

1259v

1218v

1250#

1267

1268v

1287

1062v

1124v

1193#

1372

1377

47
Material T

c

(K) H (oersteds)' Crystal

Structure Ref

Pb

2Pd0-lRhl-0 1.4-2.0-1.7-3.0

Pb

2

. Pd Tl _ 2 3.0-1.3

Pb1.9Rh 1.32

Pbl-0.99Sb0-0.01 T

1 (+0.10)

c Pbl-0.95Sb0-0.05 T' (+0.62)

Pb0.01Sn0.99 3.752

Pbl-O.97Sn0-O.O3 T' (+0.04)

Pbl-0.95Sn0-0.05 T' (+0.07)

c

v J

Pb

3Sr 1.8

Pb Te >10 (Onset)

Pb

0.73

Tl 0.27 6.43

Pb

0. 53-0. 47Tl

0. 47-0 53 5.637-5.312

Pbl-0T1 0-1 ^6.3-2.3-2.9-2.4

Pbl-0.98Tl 0-0.02 T' (-0.07)

c Pbl-0.89T1 0-0.11 T' (-0.28)

c Pb Tl, x 1-x Data given

Pb Tl, x 1-x Data given

Pd0.5Rh7.5Zr 16 9.85

Pd Rh

7 Zr16 8.56

Pd0.05Rh0.04Tl0.91

3.7

Pd

1.5

Ru

1.5Ta

Pd

0. 49-0. 52Sb0. 51-0. 48 Pd Sb (with additions)

Pd Sb

Pd0.165Sb0.835

1.66;1.67-1.42

1.66

4.9

Pd.Th

4 Pd Th,

Pd Tl.

P b.05Rb

D.04T 6.91

Pt

2Ta

Pt Tl,

Pt V

Ptr V 0.25 0.75

760 ,HF

0.75

1.32

4.3

1.58

2.91, (3.62 annealed)

C16

C16

C16

Tet

C16

C16

Ll

Cub

Ll

2 C16

C16

Ortho

C16

Ll

2 A15

0.10

0.10

1.6

0.07

1377

1377

1377

1165

1133

1153

1165

1133

1245

1341

1200

1297

1348

1165

1133

1126v

1108

1372

1372

1060

1372

1296 #

1296

1296 #

1116

1372

1377

1377

1060

1299

1377

1372

1177

48
Material T

c (K) H (oersteds)

o Crystal

Structure

Ref

Pt

0. 21-0. 33V

0. 79-0. 67

Pt

0. 19-0. 33V

0. 81 -0.67

2.41-2.91-0.199 (quenched)

3.45-3.62-0.208 (annealed)

2.35-3.015-0.199 (quenched)

2.4-3.620-0.225 (annealed)

ReRe

Re

Re

ke (125-4600A)

Re

.05 Rh

.04Ti

.91 Re Ta, (Dep. 4.2K)

x 1-x

Re l-0Tc 0-l Re

2Th

Rel-0.999W

0-0.01

Re

o-iw

i-o (Dep - 4 - 2K> Re.Zr

Rh

Rh

Rh

0.55Ru0-0.45Se

4

0.55-0Ru0.45-l Se

4 Rh

.04Ru

.05Ti

.91 Rh

7 .75RU

0.25

Zr

16 Rh

7.5Ru0.5Zr16 RhuRu Zr ,

R

u .04S b.05

T

0.91

Rh Sn„

Rh

2Ta

^.04^.05^.91

Rh Ti

2

Rl0.91Tj.09

Rh

0.1

Ti

0.9

Rh0.O8Ti0.92

Rh

0.06Tl0.94

Rh0.04Tl0.96

Rh0.02Ti0.98

1.69

1.700

1.70

1.695

2.5-4.9 4.6-5.5

2.3

3.8-7

(1.699)-2.75-8.35

5.0

1.69-1.725

3.5-7.5

6.4

0.0002 (Extrapolation)

4.3-<0.05

3.5

10.8

10.6

10.1

1.3

0.60

2.3

2.0

4.0

3.5

2.6

2.0

-1.0

1.7

211

A15

A15

Hex

C14

C14

C2

C16

C16

C16

C16

C37

Cub

Cub

Cub

Cub

Hex

<0.05

1.39

1.2

1177

1177

1220

1243 #

1254

1257

12747

1060

1325v

1303

1149

1257

1325V

1149

1118

1185#

1185

1060

1372

1372

1372

1060

1377

1299

1060

1071

1060

1071#

1071#

1071#

1060

1071#

1071#

49
Material T

c

(K) H (oersteds) Crystal

Structure Ref

Rh

0.01Tl0.99

Rh0-0.03Tll-0.97

Rh

.91Ti

.04V.05 Rh

.91Ti

.04W.05 Rh

.91Ti .04Y

.05 Rh

.91Ti .04Zr.05 Rh Zr„

Rh0.08Zr0.92

Rh

0. 03-0. 08Zr

0. 97-0. 92

Rh0.03Zr0.97

Rh

0. 01-0. 025Zr0. 99-0. 975 Ru

2Sc

Ru0.49V0.51

RU0.452V0.548 4 '°

Ru0.40V0.60 ± l -°

Ru

2Y 2.42

S Sc

S Se Ta 3.7

S 0.8Se1.2Ta 3 - 9

S 1.2

Se0.8Ta 3 ' 9

S

3 Sn Ta 2.90

S

2Ta (See Table 3)

S

2Ta

-0.9

0.79-1.79-1.34

2.9

3.4

1.4

1.8

11.1

6.1

3.1-6.1

3.1

2-4

2.24

HF

HF

HF

1.3-1.9

S 2Ta

S Ti

S Y

Sb Te Tl

Sb Ti

Sb V

Sc Se

Se Y 2.3-2.5

H Y 3 Si (120 kbar) 6.70

0.8, (1.0-1.8 after

de intercalation)

-0.8

Hex

C16

C14

C14

Bl

Tet

Hex

0.4

0.33

1071#

1109#

1060

1060

1060

1060

1377

1061#

1061#

1061#

1061#

1026

1119

1119

1119

1026

1219

1262

1262

1262

1150#

1128

Hex 1192

1.0 1191

Bl 1219

Rhomb 0.015 1139

C16 0.07 1377

C16 0.06 1377

Bl 0.33 1219

Bl 1219

Ortho 0.35 1370#

1068#

50
Material T

c (K) H

o (oersteds) 1 Crystal

Structure

Si l-0Sn

0-l V

3 16.5-<3.8-3.8 A15

Si Ta 1.86 C16

SiV

3 16.95 (17.0 annealed) A15

Si V. x 1-x

Si

.25 V

.75 Si V,

Si V,

17.0

17.0-15.7,

10.4,8.9

Si V, 0.205-0.245 0.795-0.755 1.5-16

Si V,

Si V„ (Pressure study)

Si V,

16.8, 16.1

16.5

A15

A15, Tet

A15

0.10

Ref

1369

1377

1073

1059

1064

1064

1217#

1286

1315#

1342

1369

SiV,

Si

3V

Si V,

Si V

3 Si V

3 Si Zr„

Sn =(Deposited 2K)

Sn (Deposited 2K) Sn (Ne, Xe) Sn (-15-40A)

Sn

16.9

16.8, 16.9 (optical

measurement)

16.85

16.9

4.5

3.6

4.5

4.2-5.9-4.5

HF

Sn (Whiskers )(1% strain)4. (3. 5 ,0 strain) 390(350)

Sn (5400-10, 400A) 3.88

Sn 3.721

Sn 3.720

Sn

Sn (Sn S,Tl

2Se)

Sn (<100 A) 4.5

Sn Ta Q 5.6

HF

HF

Snl-0.997Tl 0-0.003

Sn Tl n x 1-x

Sn V, 3. 8

T' (-0.052)

A15

C16 0.06

A15

1066

1110

1101

1079

1075

1377

1218v

1218v

1229v

1259v

1267

1335

1268v

580

1153

1043

1069v

1062v

1362

1032

1108

1369

51
Material T

c

(K) H (oersteds) Crystal

Structure Ref

Sr (99.57.)

Ta (9000-1100A)

Ta

Ta

TaTa (215-110, 000A)

Ta

Tal-0.3Tl0-0.70

4.45, 4.51

4.48

<1.7-4.25

4.48-8.8-7.2

Tan ab n /ATin to o i/ 8-02-8.26 (annealed) 0.68-0.46 0.32-0.54 » ,» . n: , , ' _,. 8.28-9.05 (cold worked)

Tai-ovo-i Ta0-0.5V2-1.5Zr

4.33-2.73-

8.5-9.3-8

5

8

17 61.2-45.6-

106.3(10

Ta

1

_ W _ 1 (Dep. 4.2K) 1.6-3.5

Tc (99.75) 8.35

Tc 7.73 1410, HF

Tc 7.78 HF

Tc HF Tc 7.9 Tc 7.46 HF

Tc 7.77 Tc 0.44Th

0.56

5.3

Tc 0.95V0.05 10.99 HF

Tc1 V 0.90 v 0.10 11.32 HF

Tc 0.80V

0.20 11.24 HF

Tc1 V

0.75 0.25

11.24, ~7 6 HF

Tc 0.7V

0.3

8.82 HF

Tc 0.70V

0.30 6.41 HF

Tc1 V 0.65 0.35 4.49 HF

TC 0.6V0.4

4.17

Tc 0.5-0.2V0.5-0.8

Tc 0.1 V0.9

1.50

Tc 0.15-lW0.85-0 3.3-10.4-8..35

Tc

2Zr 7.6

Te

Te (50 kbar) 3.4 Te Y 1.5-2.05

Th

A3

C14

C14

Bl

0.017

1.39

0.05

1214

11997

1209

1230

1248

1249v

1267

1209

1209

1307#

1323

1325v

1336

1161#

1138

1180

1147

1180#

1161

1149

1138

1138

1138

1138

1138

1138

1138

1138

1138

1138

1337

1149

1277

1172

1219

1267

52
Material T

c (K) H (oersteds)

o Crystal

Structure Ref

Th 1.37 Data given

Th 1.28

Th 1.28

Th 1.390 159.1

Thl-.997U0-0.003 1.37-0.5

Th

0. 999 25U0. 00075 0.785

Th0.99866U

0. 00134

Th0.4-0Y0.6-1

Thl-0.65Y0-0.35 1.28-1.64-1.53

Thl-0.65Y0-0.35 1.28-1.64-1.53

Th0.4-0Y

0.6-1

Th

2Zn 0.67

Ti (100-7000A)

Ti

Ti

Ti0.5Zr0.5

1.65

TI (Ne, Xe) 2.6 TITI 1.75 (Extrapolation for assi TI 2.397 176 TI (P) 2.332 181 Tl 3.0 (extrapolated)

TI 2.49 (extrapolated)

Tl

Tl (<100 A) 2.64

Tl (S, TlCl, Tl

2Se)

Tll-0.7Sb0-0.3 2.905-^5.3-4.198 HF

Tl 0.9988Zn0.0012 T' (+-0.002)

Al

Al

Hex

Cub

Al

A3

C16

(Al)

(Al)

Tl, Zn 1-x

UU

V (5000, 11,000) V

VV

V

0. 06-0. 09Zr0. 94-0. 91 V

2Zr

V

2Zr

Data given

«= 2.1 (Hypothetical y phase)

5.14, 6.02

5.46

5.43 1408, HF HF 7.0-<4.2

4.2

8.5

1.2

1.2

1.3

Ortho

1291

1361#

1182#

1123#

1226

1227#

1227 #

1361

1361 #

1182#

1182#

1377

1273v

1071#

1061#

1061#

1229v

1267

1308

1373

1378

1156

1155

1145

1062v

1069v

1378

1095

1108

1252

1152

1199v

1248

1162

1106

1306

1306

1323

53
Material T (K)

c H (oersteds)' Crystal

Structure Ref

V

2.3

Zr

V

2Zr

8.6

W (0 2 content varies) <1.0-3.2

Y 0.5-0Zr0.5-l

(Dep - 4 - 2K)1 - 5

- 3

Yb

Yb

Zn

Zn

Zn(Deposited <2K) 0.31-1.48 (disordered)

0.77-0.84 (annealed)

Zn

Zr

Zr (100-7000A) -1.3 (>500A)

C15 1189

C15 1189

A15 1042v

A3 0.08 1182#

Hex 0.08 1350#

0.08 1361#

0.005 1367

1325v

Al 1.0 1338#

A3 0.015 1338#

1256

1267

1310v

1061#

1061#

1273v

54
TABLE 3. SUPERCONDUCTIVE MATERIALS WITH ORGANIC CONSTITUENTS

Material T (K) H (oersteds) Crystal T Ref.

Structure

Al (tetracyanoquinodimethan) 1.9-3.7 (annealed) 1078v

Codeposited 2. 7-5. 24 (unannealed)

In (anthraquinone) (~5000 A) 3.4-4.6 1076

V

Nb S„ (ammonia) 2.0 Hex. 1192

NbS. (aniline) 4.0 Hex. 1192

Nb Sn (carbon dioxide) HF 1168

(carbon monoxide)

(methane)

(nitrogen)

(oxygen)

Nb S„ (s-collidine) S (s-coUidine) n ,„ 3.5 Hex. 1192 1? 3.5

Nb-Sn (ammonium) HF 1169

(boron trichloride)

(ethane)

(hydrogen sulfide)

(nitrogen oxide)

(propane)

Nb S 2 (pyridine ) Q 4.0 Hex. 1192

Nb S, (tributylphosphine)

Q 125 3.5 Hex. 1192.

S SeTa (pyridine) 1.5 HF 1262

S

2Ta (2-aminopyridine)

5g 3.25 Hex. 1128

S 2Ta (4-aminopyridine)

gl 3.40 Hex. 1128

S

2Ta (ammonia) 4.2 Hex. 1192

SjTa (ammonia) 4.2 . Hex. 1192

S-Ta (ammonium acetate) 2.0 Hex. 1192

S-Ta (ammonium hydroxide) 3.3 Hex. 1192

S»Ta (amylamine) 2.2 1192

S

2Ta (aniline) 3.1 Hex. 1192

S

2Ta (aniline) ?5 3.1 Hex. 1192

S

2Ta (butylamine) 2.5 Hex. 1192

55
Material T

c (K) H (oersteds)

o Crystal

Structure

Ref.

S 9Ta (butyramide)

S 9Ta (cesium hydroxide)

S

2Ta (s-coUidine)

Q 1?

S

2Ta (2,6-diaminopyridine)

_ 53

S

9Ta (2-dimethylaminopyridine)

S„Ta (4-dimethylaminopyridme) 34

S

9Ta (N, N-dimethylaniline)

S

2 Ta (2,6-dimethylpyridine) „ Q

i S

2 Ta (4, 4 -dipyridyl)

S

2 Ta (ethylamine)

S

2 Ta (2-ethylpyridine)2g

S

2 Ta (3-ethylpyridine)

Q 2g

S

2 Ta (4-ethylpyridine) „„

S

2 Ta (hexanamide)

S? Ta (hydrazine)

S

2 Ta (2-isopropylpyridine)25 S

2 Ta (4-isopropylpyridine) 2g

SpTa (isoquinoline)

S9 Ta (lithium hydroxide)

SpTa (methylamine)

S

2 Ta (2-methylpyridine)„ o.

S

2 Ta (3-methylpyridine) „„

S

2 Ta (4-methylpyridine) „„

S? Ta (octadecylamine)

S9 Ta (pentadecylamine)

S? Ta (p-phenylenediamine)

S

2 Ta (p-phenylenediamine). „.

3.1

3.8

2.0

3.50

3.15

32

2.30

4.3

2. 15

2.5

3. 3

3.

4. 50

2. 95

3. 1

4. 7

3. 80

2. 82

2. 5

4. 5

4. 2

2. 95

2. 95

2. 70

3.

2. 8

3. 3

2. 9

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

1192

1192

1192

1128

1128

1128

1192

1128

1192

1192

1128

1128

1128

1192

1192

1128

1128

1192

1192

1192

1128

1128

1128

1192

1192

1192

1192

56
Material T

C

(K) H (oersteds) Crystal

Structure

Ref.

S

2 Ta (2-phenylpyridine) 2g5 3. 15

S

2 Ta (4-phenylpyridine)

Q 2g 1.6

S? Ta (potassium formate) 4. 7

S2 Ta (potassium hydroxide) 5. 3

S

2 Ta (propylamine) 3.

S

2 Ta (4-propylpyridine) 25 2. 75

S

2 Ta (2-propylpyridine) 245 2. 85

S

2 Ta (pyridine)

5

3. 5

S 2Ta (pyridine)^ 3. 55

S

2Ta (pyridine)^ 3. 25

S

2Ta (pyridine-N-oxide) 2. 5

S Ta (pyridinium chloride) 3. 1

S

2 Ta (quinoline) 2. 8

S

2 Ta (rubidium hydroxide) 4. 3

S

2 Ta (septadecylamine) 2. 7

S

2 Ta (sodium hydroxide) 4. 8

S

2 Ta (stearamide) 3. 1 SoTa (tetradecylamine) 2. 4

S

2 Ta (N, N, n', N'-tetra- methyl-p-phenylene - diamine)

2. 9

SpTa (thiobenzamide) 3. 3

S2 Ta (tributylamine) 3. SgTa (tributylphosphine)

Q 12[- 2.

S

2 Ta (tridecylamine) 2. 5

S

2 Ta (2, 4, 6-trimethylpyridine)

0< wg

1. 95

SgTa (triton B) 5.

S

2 Ta (valeramide) 2. 9 S,Tan QWn (s-coUidine) n ,_ 2.

S

2 Ta0. 3 W0. 7 (s-collidine)

0> 1? SgTi (ammonia)

S

2 Ti (aniline)

SgTi (s-collidine) 1?

S

2 Ti (pyridine)

g SgTi (tributylphosphine) 125

S

2 Zr (ammonia)

HF

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex

Hex

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

Hex.

0.4

0. 3

0. 3

0.3

0.3

0. 3

0.3

1128

1128

1192

1192

1192

1128

1128

1192

1128

1262

1192

1192

1192

1192

1192

1192

1192

1192

1192

1192

1192

1192

1192

1128

1192

1192

1192

1192

1192

1192

1192

1192

1192

1192

57
TABLE 4. HIGH MAGNETIC FIELD (TYPE II)

SOME OF THEIR PROPERTIES

(Note: All fields are quoted in kilo-oersteds,

measurement in degrees Kelvin)

SUPERCONDUCTIVE MATERIALS AND

Tobs in<*icates temperature of

Material cl c2 c3 obs Ref.

Al (<40-1000A)

Al

0.5Ga0.5Nb

3 A1Gd0-0.009La

3-x

A1

2Gd0-0.004La

l -0.996

A10.16Ge

0.05Nb0.79

Al

Q 8GeQ 2Nb3 (5000A.)

Al Nb

3 Al Nb

3

Au V,

3.74-<1.26

19.0

5.97-<l

3.20-1.52

20.7

16.0

18.1

18.6

<0. 015-3. 22

Bi0.0108In0.9892 (2000A - )

Bi0.0043In0.9957< 2000A ->

Bi

0.56

Pb0.44 ( ^°US 8laSS;

Bi„ -Pbn ,(Porous glass;

U " u.o

32A)

Bin oPb- 7 (Porous glass; U.J U./ 32A)

Bi, Pb 25-63*70 75-37*70

Bi0.3Pb

0.7

Bi

0.4Pb 6^ porous Slass

Bi0-0.565Pbl-0.435

Bi~ ,-Sn , (metastable)

Bi„ cSn

n ..(metastable)

Bi~ ,Sn_ ,(metastable)

0.4 0.6

Bi0.005Sn0.995 (2000A)

Bi Te

£Tl (n = 6 x 10 20

)

8.63

7.0

7.2

7.34

0.14

-l >12

H >23

310

316

27 3.2-0.45

410

439

>210

Data given

295 330 Data given

Data given

178

113

186

125

95

I vs H given

c 35

110,96

0.6->16 0-<15

4.50

4.7

5.35

Data given

0.010

1294s

4.2 1339

1364

1262

1339

4.2 1174v

1075

4.2 1339

1160

1089v

1089v

4.2

1045

1045

4.5 1045

1102

1318

4.2 1319

? 1288

4.2 1091

4.2 1091

4.2 1091

1089v

1139

58
Material T H H

. « 9 H . T u. Ref. £ cl "c

nc2 nc3 W

C~0.5M°~0. 5 52 4.2 1098

CMo~2, 30

8 (after 1400°C,

\ hour)

C 0-lN

0-lNb 80-125-13

C N Nb 67

C Nb >11°K 13

C Nb

C Ta 10

4.2

4.2

4.2 1038

4.2 1038

4.2 1038

4.2

4.2

1244 7 11 (annealed)

1,6 4.2 1244

4. 4 (annealed)

Ce0-0.1 In La3-2.9 9.45-<l 71-0 CeG-0.021Lal-0.979 4.5-2.7 Data given

Ce0-0.02Lal-0.98 4.87-2.4 0.33- 0.80- Data given

0.14 0.32

C °0.02Sn

0.98Ta

3 4>1 Data given

Cr

xZnl-x 0.85-<0.037 Data given

CS

x

Fx+ yLi

y°3-x-yW 3 - 4 " 2 - 6.9-4.3

Cs

x

Fx°3-xW 4.5-1.4(x=0.08- 9.0-4.0

0.30)

Fx+yLiy°3-x-yRb

xW ^O"2 ' 1 6.2-4.8

Fx°3-xRb

xW 3.7-0.9(x=0.08- 8-9.4-5.9

0.30)

Fe0-0.04Ga

4M

°l-0.96 8 - " 4 - 2 74 " 37 Ga

4Mn0-0.01Mol-0.99 8 " 4 - 74 ' 25 Ga

4M° 8.0 73.7

Ga

4M

°l-0.96Nb

0-0.04 8 -° 74 " 78 Ga

0.19Nb

0.81 13 - 3 133

Ga

245Nb

755 20 - 2 341(calculated)

Ga

0.30Nb0.70 16.3 199

220(calculated)

Ga

0.32Nb

0.68 20 ' 2 336 4<2 1339

1228

1265

1358

1362

1322

1242

1242

1242

1242

1295

1295

1295

1295

4.2 1339

1339

4.2 1339

59
Material cl c2 c3 obs Ref.

Ga V, 14.

A

Data given 1075

Gd In La„

x 3-x

where x = 0.0064 8.5

0.0148 7.9

0.0340 6.8

0.0396 6.0

0.0496 5.0

0.0596 4.3

0.0640 3.4

0.0732 2.7

Gd0-0.006La

l -0.994 4 .5 -2.3

Gd0.08La0.92Sn

3 4 .3 Gd0.067La0.933Sn

3 4 .6 Hf0.1N ^1-0 14 .6 5.3

H -5 «. 1 «T'1 8. 05-8.35

Hf0.1-0.5Nb0.5 or 0.7Ti0.06-0.30

Zr0.06-0.30

Hf V,

52

40

14 5.4-7.4-0

< vs - T

obs>

2.8-3.6-0

1.7-2.1-0

1.0-1.05-0

0.6

Data given

0.60

0.70

135-10

25-30

Data given

200

0.3

1125

1265

1329

1329

4.2 1203

1.1 1117

1092

4.2 1189

Hf0.5V

2Zr

0.5

Hg (in asbestos)

In

In La.

Inl-0.87Pb0-0.13

In

0. 96-0. 90Pb

0. 04-0. 10

In0.955Pb

0.045

In0.95Pb

0.05

In0.945Pb0.055

In0.22Pb

0.57 Sn

0.21

In Sb

10.1 -230

.3 30->70 Data given

9.2 61

0.11-

0.10

280-

565

0.10-

0.18

Data Given

0.11-0.39 0.23

0.77

3.69 0.311 0.353 0.431

3.73 0.318 0.375 0.492

3.83 0.303 0.386 0.602

4.8

-3.4 Data given

4.2 1189

1284

1268

2 1125

1029

T

/T

c =0.8 1074

1140

1140

1140

2.0 1041

1129

60
Material

In

0. 06-0. 01 Sn

0. 94-0. 99

In

0. 73-0. 63T1

0. 27-0. 37

\:1

3.645-3.625-

3.64

La

La0.98Lu0.02

La0.98Lu0.0115Tb0.0085

La0.98Lu0.01Tb0.01 La0.92

Sn

3Tm0.08

La0.84Sn

3Tm0.16 Mn Zn. x 1-x Mo~0.2Nb~0.8

Mo~0.15Nb~0.85

Mo~0.1Nb~0.9 M

°~O.05Nb~0.95

Mo

Q

c 2Ren Ag (Annealed)

(Unannealed)

Mo0.66Re0.34

N Nb (with 0,)

NNb

HQ93Nb

N Nb (2400A) 14.7

N Nb . (Reactive sputtering) 17.3

NNb -15.5 ~0.5Ti~0.5

N Nb Ti, x y 1-x-y

N Nb Zr. x y 1-x-y

Na0.084Pb0.916

Hc2

Data given

0.275-0.350

8-10.8

c3 obs

Ref.

4.643 11.5

2.582 1.38

2.108 0.82

5.2 Data given

3.3 Data given

0.85-0.12 Data given

4.22 0.15 50 2.99

5.30 0.16 46 2.47

6.38 0.29 785 4.14

7.84 0.49

0.613

0.836

1 07 4.265

16.2

20.1

11.8 0.381 11.34

118-132

15.0 ~250

0.008

14.6-16.5-4.4

15.5—17-5

-15-9

>250

-200

<250

135-145-5

<200

-200

Data Given

1050

2.15 1055

1.4 1265

1271

1271

1271

1329

1329

1322

2.39 1103

3.77 1103

3.78 1103

4.17 1103

1.16 1151

5.40

1.94

4.2 1331

4.2 1234

1044

15.8 1070

4.2 U74v

4.2 1175v

1044

4.2 1203

4.2 1344v

1344v

1312

61
Material T

c cl H H n H n c c2 c3 obs Ref.

Nb Data given 1316

Nb (RRR 16,500) 9.25 H

c3 /H

c 2 glven 1211

Nb 9.20 Data given 1298

Nb (440,1050A) 7.02-8.6 0.011-19 20-32 1251

Nb(RRR 100-830) 9.21 2.77-3.8 (vs purity

and orientation)

4.2 1237

Nb(RRR 100) 9.21 3.92-4.16 (vs orientation)

1.5 1300

Nb (RRR ~1000) 9.23 4.035 1359

Nb //[ill] ,4.44

//[110] ,4.17

//[OOlJ ,4.02

1142

Nb 8.68 ~8 1087

1135

Nb

Nb S

2 (See Table 3, V-l)

Nb Se„

9.20 1.85

7.0

3.9

^22,20

// 74,71

4.2

4.2

1099

1262

Nb

3Sn(See Table 3, V-l)

Nb-Sn

Nb

0. 75-0. 82Sn

0. 25-0.18

(Vapor deposit)

Nb~0.2Ta~0.8

Nb~0.05Ta~0.95

Nb0-0.16Ta

l-0.84

Nb0.016Ta0.984

Nb0.025Ta

0.975

Nb0.04Ta0.96

Nb

0.05Ta0.95 ( deformed) Nb0.08Ta0.92

Nb0.16Ta0.84

Nb0.05Ti0.95

18.0 Data g iven 1075,

1034

18.31-8 2 225 4.2 1167

4.64 0.1 4.19 1103

4.55 0.08 4.19 1103

4.480-4.465-

4.670

Data Given

0.795-

0.882

Data Given

0.847

1356

1356

4.465 0.773 0.800 0.99 1356

4.470 0.772 0.817 1.17 1356

0. 23-0 39 4.19 1330

4.540 0.768 0.882 1.78

2.98

1356

1356

9.38 19.1 1216

62
Material

cl c2 c3 obs

Ref.

Nb0.75Ti0.25 9.93 0.35

Nb0.75Ti0.25 9.8

Nb0.9Ti

0.1 9.2

Nb0.90Ti0.10 9.61 0.50

Nb0.95Ti0.05 9.41 0.675

Nb0.95Ti0.05 9.2

Nb0.15Ti0.40Zr

O. 45

Nb Zr (3000-4000 A) 1.6-9.3

Nb Zr 10.75

O.Rb W

3 x

6.

6.

2.

,40-6.14

,55-5.45

,84-2.36

Pb (900-3300 A) 7.26

Pb

S Se Ta 3.7

S 0.8Se1.2Ta 3.9

S

1.2

Se0.8Ta 3.9

90.5 1241

S Se Ta (Pyridine)

S

2Ta (Pyridine) Q5

Sn (5400, 10,400 A) Sn Ta1.5

3.25

3.88-3.90

5.6

100 1371

73 4.2

37 1371

36 4.2

35 1241

18 1241

19.5 1371

16.5 4.2

I data given 1205

I data given 1275

H « changes 1301

with P Data given 4.19 1080

Data given 12687

Data given 1287

i 9,11 2.2 1262

II 54,74 2.2

1 10.4 2.34 1262

X 6.7 2.9

// 45 2.9

J.12,13 2.34 1262

//75,92 2.34

X 2.6 1.1 1262

//19.1 1.1 X 4.9 1.4 1262

1 1.4 2.0

// >150 1.4

// > 66 2.0

Data given 1268v

Data given 1362

63
Material T H , H H H , T , Ref.

c cl c c2 c3 obs

Si V

3 16.9 Data given

Tc 1.02 1 55 4.17

Tc (<10l0^>sample) 7.46 1.16 1 55 3.12

Tc 7.78 2.33 Tc 7.73 1 41 2.46

Tc0.95V

0.05 10.99 35.5

Tc0.90V0.10 11.32 43.3

Tc0.80V

0.20 11.24 42.3

Tc 0.75V

0.25

[Lower

temp.

)

annealing 11.07 23.7

Tc 0.75V

0.25 11.24 34.8

Tc„ 7Vn -(Lower annealing

temp.)

Tc 0.7V

0.3

8.82

6.41

14.0

31. 7

Tc 0.65V

0.35

4.49 21.4

Tl

l-0.7

Sb0-0 3

2. 905--5.3-

4.198

0.18-0.46-

0.29

0.86—7.3-

3.9

V 5.43 1 .408 2.68

V

?Zr 103

1075

1180

1180

1138

1161

1138

1138

1138

1138

1138

1138

1138

1138

1378

n 1162,

1106

4.2 1189

64
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74
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(1971) and 31, 1661 (1971)

1365. Takata, M. and Oshida, S., J. Phys. Soc. Japan 30, 1640 (1971)

1366. Raub, Ch.J. , Mons, W. and Lawson, A. C. , J. Less-Common Metals 26, 319 (1972)

1367. Black, W. C. and Mota, A. C. , Private communication quoted in Ref. 1366.

1368. Mota, A. C, Private communication quoted in Ref. 1366.

1369. Roschel, E. and Raub, Ch.J., Metall 26, 29 (1972)

1370. Bucher, E. , Andres, K. , and DiSalvo, F. J., Lecture 4th International Transition

Metal Compound Conference, Geneva, April 9-13, 1973 and personal communication.

1371. Lubell, M. S. and Kroeger, D. M. , Advances in Cryogenic Eng. 14, 123 (1969)

1372. Havinga, E. E. , Private communication (For preparation see (Havinga E. E. , et al . J. Less-Common Metals 27, 169 (1972))

1373. VanMaaren, M. H. , Buschow, K.H.J, and VanDaal , H. J., Solid State Cornmun. 9,

1981 (1971)

1374. VanMaaren, M. H. , Private communication, 1973 (Preparation: W. Rudorff et al .

,

Z. Amorg. Allgem. Chem. 269, 141 (1952))

1375. Lawson, A. C, J. Less-Common Metals 32, 173 (1973)

78
1376. Matthias, B. T. , Private communication (1973) quoted in Ref. 1375.

1377. Havinga, E. E. , Damsma, H. and Hokkeling, P., J. Less-Common Metals 27, 169 (1972)

also H, D, and with Kanis, J. M. , J. Less-Common Metals 27, 281 (1972)

1378. Gentry, W. 0., Master of Science Thesis, 1964, Univ. of 111., Urbana, Illinois.

79
REVIEW ARTICLES AND BOOKS WITH EMPHASIS ON SUPERCONDUCTIVE MATERIALS

Onnes, H. , Kamerlingh, Commun. Kamerlingh Onnes Lab. 13, Supplement 34b (1913-14).

Crommelin, C.A. , Physik. Zeitschr. 21_, 274, 300, 331 (1920).

Meissner, W. , Metallwirtschaft L5, 289 (1930).

Schulze, A., Z. Ver. duet. Ing. T4, 149-52 (1930).

Bates, L.F., Science Progress 24, 565-72(1930).

Meissner, W. , Metallwirtschaft 10, 289, 310(1931).

DeHaas, W.J. and Voogd, J., Commun. Kamerlingh Onnes Lab. 20, Supplement 73a (1932).

Clusius, K. , Zeits. Elektrochem. _38, 312-26 (1932).

Meissner, W. , Erg. Der Exakt. Naturw. 11, 219 (1932).

McLennan, J. C. , Nature 130, 879(1932).

McLennan, J. C. , Pharm. J. 128 , 470 (1932).

Kikoin, I. and Lazarev, B. , J. Tech. Phys. (USSR) 3, 237-54(1933).

Meissner, W. , Physik. Zeitschr. 35_, 931 (1934).

Tammann, G. , Z. Metallkunde 26, 61 (1934).

Burton, E.F. (Ed.), "The Phenomenon of Superconductivity, " Univ. of Toronto Press, Toronto (1934).

McLennan, J. C. , Reports on Prog, in Physics J_, 206 (1934).

McLennan, J. C. , Roy. Soc. Proc. 152A , 1-46(1935).

Meissner, W. , "Handbuch der Experimental Physik XI, " Part 2, 204-262 (1935).

Smith, H.G. and Wilhelm, J. O. , Rev. Mod. Phys. 7, 237(1935).

Darrow, K. K. , Rev. Sci. Instr. ]_, 124 (1936).

Ruhemann, M. and Ruhemann, B. , "Low Temperature Physics," Cambridge Univ. Press (1937).

Steiner, K. and Grassmann, P., "Supraleitung, " Vieweg und Sohn, Brunswick (1937).

Silsbee, F. B. , J. Wash. Acad. Sci.

2J_, 225-44 (1937).

Shoenberg, D. , "Superconductivity, " Cambridge Univ. Press (1938).

Shoenberg, D. , Uspekhi Fiz. Nauk. _19, 448-91; 20, 1-28(1938).

Jackson, L. C. , Reports on Prog, in Physics 5_, 335-44(1939).

Burton, E.F., Grayson Smith, H. , and Wilhelm, J. O. , "Phenomena at the Temperature of Liquid

Helium, " Reinhold Publishing Corp. , New York, pp. 87-123(1940).

Casimir, H. B. G. , Nederland. Tijdschr. Natuurkunde 8, 113-23(1941).

Laue, M. Von, Ber. 75B, 1427-32 (1942).

80
Laue. M. Von, Physik. Z, 43, 274-84 (1942).

Mendelssohn, K. , Reports on Prog, in Physics 10, 358-77 (1944-45).

Itterbeek, A. van, Soc. Roy. beige ing. ind. , Mem. Ser. B 1, 47-51 (1945).

Justi, E. . Naturwiss. 33, 292-7, 329-33 (1946).

Ginsburg, V. L. , "Superconductivity, " Academy of Science USSR, Moscow, Leningrad (1946).

Hewlett, C.W., G. E. Rev. 49, 19-25(1946).

Andronikashvili, E. L. and Tumanov, K.A. , Uspekhi Fiz. Nauk. 33, 469-532 (1947).

Justi, E. , "Leitfahigkeit und Leitungsmechanismus fester Stoffe, " Gottingen, Vandenhoeck and

Ruprecht, pp. 187-270 (1948).

Laue, M. Von, Ann. Physik. 3, 40-2 (1948).

Meissner, W. and Schubert, G.V. , Fiat Rev. German Science (1939-46); Physics of Solids Pt. II, 143-62 (1948).

Gorter, C. J. , Physica 1_5, 55-64(1949).

Mendelssohn, K. , Reports on Prog, in Physics 1_2, 270-290 (1948-49).

Vick, F.A., Science Progress 37, 268-74(1949).

Wexler, A., Research, Lond. 3, 534 (1950).

Shoenberg, D. , Nuovo Cimento 10, Ser. IX, 459-89 (1953).

Gorter, C.J., Physica _19, 745-54(1953).

Eisenstein, J., Rev. Mod. Phys. 26, 277 (1954).

Buckel, W. , Naturwiss. 42, 451 (1955).

Serin, B. , Handbuch Der Physik, Band XV Kaltephysik II, Springer-Verlag, Berlin, pp. 210-73(1956).

Zavaritskii, N. V. , Priroda 45, 37-44(1956).

Wexler, A., Metal. Progr. 69, 89 (1956).

Abrikosov, A. A., Vestnik Akademii Nauk SSSR #4, 30-36 (1958).

Boorse, H.A., Amer. Jour, of Physics 27, 47 (1959).

Buckel, W. , Metall. L3, 814 (1959).

Cooper, L. N. , Amer. Jour, of Physics 28, 91 (1960).

Schoenberg, D. , "Superconductivity, " (2nd Ed. , 1960 Printing), Cambridge Univ. Press (1960);

(1st Ed. , 1938; 2nd Ed. 1952).

Bardeen, J. and Schrieffer, J. R. , Prog, in Low Temp. Phys. Vol. III.

Kropschot, R. H. and Arp, V., Cryogenics 2, 1 (1961).

Jones, W.H. , Milford, F.J. and Fawcett, S. L. , J. of Metals _14, 836(1962). Also Battelle Technical Review, (Sept. 1962).

Tanenbaum, M. and Wright, W. V. (Ed.), "Superconductors, " John Wiley & Sons, New York (1962).
Bardeen, J. , "Critical Fields and Currents in Superconductors, " Rev. Modern Phys. 34, 667 (1962).

Bowen, D. H. , "Effects of Pressure, " in High Pressure Physics and Chemistry, Vol. I , R. S. Bradley (Ed. ), Academic Press, London, New York, pp. 355-73(1963).

Bardeen, J. , "Superconductivity, " in Advances in Materials Research in the NATO Nations, MacMillan, New York, pp. 281-90 (1963).

Matthias, B. T. , Geballe, T.H. and Compton, V. B., "Superconductivity (Compounds), " Rev. Mod.

Phys. 35, 1 (1963).

Geballe, T.H. and Matthias, B. T. , "Superconductivity, " in Annual Review of Physical Chemistry, Vol. 14, pp. 141-160 (1963).

Anderson, D. E. , "Superconductivity," in Magnetic Materials Digest 1964, M.W. Lads, Philadelphia,

pp. 196-217 (1964).

"Proc. Inter. Conf. on Science of Superconductivity, Hamilton, N. Y. , Aug. 1963, " Rev. Mod. Phys.

36, (1964).

Lynton, E.A., "Superconductivity," Metheun & Co., London; John Wiley & Sons, New York (1964).

Three editions have issued.

Yasukochi, K. and Ogasawara, T. , Metal Physics (Tokyo) 10. 137, 197(1964).

Livingston, J. D. and Schadler, H.W., "The Effect of Metallurgical Variables on Superconducting

Properties. " Progress in Materials Science L2, 183-287 (1964).

Klose, von W. , "Harte Supraleiter, " Natur wissenschaften 51, 180-186 (1964).

Ginsburg, D. M. , "Resource Letter Scy-1 on Superconductivity." (Outlines areas of Research with

selected papers), Am. J. Phys. 32, 85 (1964).

Klein, R. and Schneider, D. , "Supraleitung" in Leitungsmechanismus und Energieumwandlung in Festkorpern, E. Justi (Editior), Vandenhoeck and Ruprecht, Gottingen, pp. 236-335 (1965).

Abrikosov, A. A. , "The Present State of the Theory of Superconductivity, " Usp. Fiz. Nauk ST_, 125-42 (1965); Soviet Physics Uspekhi 8, 710 (1966).

Block, F. , "Some Remarks on the Theory of Superconductivity," Physics Today 19, 27 (May) (1966).

deGennes, P. G. , "Superconductivity of Metals and Alloys" (Theory), Frontiers in Physics,

Benjamin, New York (1966).

Ralls, K. M. and Wulff, J. , "The Electronic Structure of Transition Metal-Interstitial Atom

Alloy Superconductors, " J. Less Common Metals 11, 127-34 (1966).

Roberts, B. W. , "Superconductive Properties" in Intermetallic Compounds, Edited by J.H. Westbrook, John Wiley and Sons, New York, pp. 581-613 (1967).

Savitskii, E. M. and Baron, V. V. , Editors "Physics and Metallurgy of Superconductors," Proc. 2nd and 3rd Conf. on Metallurgy, Physical Chemistry and Metal Physics of Superconductors,

Moscow, May 1965 and May 1966, Translation: (Consultants Bureau, New York, London, 1970).

Goodman, B. B. , "Type II Superconductors, " Repts. Progress in Physics 29 (Part 2), 445-487 (1966).

Heaton, J. W. , "High Field, High Current Superconductors, " Sci. Progr. (Oxford) 54, 27-40(1966).

Douglas, D. H. , Jr. and Falicov, L. M. , "The Superconducting Energy Gap," Prog, in Low Temp.

Phys. 4, 97-193 (1964).

Chester, P. F. , "Superconducting Magnets, " Repts. Progr. Phys. 30, Part II, p. 561 (1967).

82
Kuper, C.G. , An Introduction to the Theory of Superconductivity, Clarendon Press, Oxford (1968).

Ginzburg, V. L. , "The Problem of High Temperature Superconductivity" Contemp. Phys. 9, 355-374 (1968).

Alekseevskii, N. E. , "New Superconductors, " Usp. Fiz. Nauk 95. 253-266(1968), Trans: Soviet

Physics Uspekhi 11, 403(1968).

Ginzburg, V. L. , "The Problem of High Temperature Superconductivity," Usp. Fiz. Nauk 95, 91-110 (1968).

Muller, J. , "Supraleitende Materialen" in Vortrage Uber Supraleitung, (Birkauser, Basel and Stuttgart,

1968), pp. 95-116.

Fishlock, D. , Editor, "A Guide to Superconductivity, " (American Elsevier: New York 1969).

Parks, R. D. , Editor "Superconductivity, " Vols. I and II (Marcel Dekker: New York 1969).

Builova, N. M. and Sandomirskii, V. B. , Usp. Fiz. Nauk 97, 119(1969); Translation Soviet Physics

Uspekhi 12^ 64 (1969).

Matthias, B. T. , Amer. Scientist 58, 80(1970).

"Superconductivity and the Periodic System. "

Glover, R. E. , III, "Superconductivity Above the Transition Temperature, " Prog, in Low Temp.

Physics 6, 291-332 (1970).

Hulm, J. K. , Ashkin, M. , Deis, D. W. and Jones, C. K. , "Superconductivity in Semiconductors and

Semi-metals," Prog, in Low Temp. Physics, Vol. VI, Chap. 5, pp. 205-242 (1970).

Boughton, R.I., Olsen, J. L. and Palmy, C. , "Pressure Effects in Superconductors, " Prog, in Low Temp. Physics 6, 163-203(1970).

Ginsburg, D. M. , "Resource Letter Scy-2 on Superconductivity, " (Outlines areas of research with

selected papers) Am. J. Phys. 38, 949 (1970).

Brandt, N. B. and Ginzburg, N.I. , "Superconductivity at High Pressure, " Scientific American,

224, 83-95 (April) (1971).

Echarri, A. and Spadoni, M. , "Superconducting Nb^Sn: A Review," Cryogenics 11, 274-84(1971).

Weis, O. , "The Physical Properties of Superconductive Metals," Chemiker-Zeitung 9_5, 168 (1971).

Livingston, J. D. , "Superconductivity and Superconducting Materials, " (A Review) Canadian

Metallurgical Quarterly 11, 285-293 (1972).

Douglas, D. H. , Editor, "Superconductivity in d- and f- Band Metals, " AIP Conf. Proc. Number 4. (Amer. Inst. Physics, New York, 1972).

Savitskii, E. M. and Efimov, J. V. , Monatshefte fur Chemie 103, 270-287(1972).

"Supraleitende metallische verbindungen und ihre Legierungen. "

"Superconductive metals and alloys, " Sverkhprovodiashchie splavy i soedineniia,

Izdatel'stvo(marhka), Moskva 1972, 205 p.

Matthias, B. T. , "La Supraconductivite a haute temperature, " LaRecherche 33, 319-326(1973).

83
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4. TITLE AND SUBTITLE

Properties of Selected Superconductive Materials--

Supplement, 1974

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5. Publication Date April 1974

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7. AUTHOR(S)

B.W. Roberts

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16. ABSTRACT (A 200-word or /ess tactual summary of most significant information. If document includes a significant

bibliography or literature survey, mention it here.) This report includes data Otl additional SUperconductive materials extracted from a portion of the world literature up to mid1973. The data presented are new values and have not been selected or compared

to values (except for selected values of the elements) previously assembled by

the Superconductive Materials Data Center. The properties included are composition,

critical temperature, critical magnetic field, crystal structure and the results

of negative experiments. Special tabulations of high magnetic field materials

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entries are keyed to the literature and a list of reviews centered on superconductive materials is included.

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