NAT l INST. OF STAND & TECH R.I.C.

A 1 1 1 4 3n72fl

NBSIR 86-3344-2

Center for Electronics and

Electrical Engineering

Technical

Progress

Bulletin

Reference publications

Covering Center Programs,

October - December 1985 with

1986 CEEE Events Calendar

June 1 986

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899

-QC

-

100

• U56

86-3344-2

1986
INTRODUCTION TO JUNE 1 986 ISSUE OF THE CEEE TECHNICAL PROGRESS BULLETIN

This is the thirteenth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and Electrical Engineering. This issue of the CEEE Technical Progress Bulletin covers the

fourth quarter of calendar year 1985.

Organization of Bulletin ; This issue contains abstracts for all Center papers re- leased for publication by NBS in the quarter and citations and abstracts for Center

papers published in the quarter. Entries are arranged by technical topic as identified in the table of contents and alphabetically by first author under each subheading within each topic. Unpublished papers appear under the subheading "Released for

Publication" . Papers published in the quarter appear under the subheading "Recently

Published". Following each abstract is the telephone number of the individual to

contact for more information on the topic; unless otherwise noted, this person is the

first author. This issue also includes a calendar of Center conferences and workshops planned for fiscal year 1 986, an announcement of recently issued standard

reference materials, and a list of sponsors of the work.

Center for Electronics and Electrical Engineering : Center programs provide national

reference standards, measurement methods, supporting theory and data, and traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U. S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor Technology Program, carried out by the Semiconductor Electronics Division (formerly the

Semiconductor Materials and Processes and the Semiconductor Devices and Circuits

Divisions) in Gaithersburg, MD, and the Signals and Systems Metrology Program, car- ried out by the Electrosystems Division in Gaithersburg and the Electromagnetic

Fields and Electromagnetic Technology Divisions in Boulder, CO. Key contacts in the

Center are given on the back cover; readers are encouraged to contact any of these

individuals for further information. To request a subscription or for more information on the Bulletin, write to CEEE Technical Progress Bulletin, National

Bureau of Standards, Metrology Building, Room B-358, Gaithersburg, MD 20899 or call

(301) 921-3357.

Center sponsors : The Center Programs are sponsored by the National Bureau of Standards and a number of other organizations, in both the Federal and private sectors;

these are identified on page 32.

Note on Publication Lists : Guides to earlier as well as recent work are the publication lists covering the work of each division. These lists are revised and reissued on an approximately annual basis and are available from the originating division.
CEEE Technical Progress Bulletin - June 86 Page 1 TABLE OF CONTENTS

INTRODUCTION inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM

Silicon Materials 2 Analysis Techniques 2 Gallium Arsenide Materials 3 Power Devices 3 Insulators and Interfaces 4

Dimensional Metrology 5 Integrated Circuit Test Structures 6

Process and Device Modeling 10

Radiation Effects 13

Packaging 14

Other Semiconductor Metrology Topics 14

SIGNALS AND SYSTEMS METROLOGY PROGRAM

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 14

Waveform Metrology 14

Cryoelectronic Metrology 18

Antenna Metrology 18

Microwave Metrology 20

Laser Metrology 21

Optical Fiber Metrology 22

Other Fast Signal Topics 23

ELECTRICAL SYSTEMS 24

Power Systems Metrology 24

Pulse Power Metrology 25

Superconductors 25

Magnetic Materials and Measurements 26

ELECTROMAGNETIC INTERFERENCE 26

1986 CEEE CALENDAR 31

RECENTLY ISSUED STANDARD REFERENCE MATERIALS 31

SPONSOR LIST 32

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 2 CEEE Technical Progress Bulletin - June 86

SEMICONDUCTOR TECHNOLOGY PROGRAM

Silicon Materials

Recently Published

Forman, R.A., Bell, M.I., Myers, D.R.,

and Chandler-Horowitz, D. , The Raman

Spectrum of Carbon in Silicon, Japan- ese Journal of Applied Physics, Vol.

24, No. 10, pp. L848-L850 (1 985).

Raman spectroscopy is used to characterize carbon-doped silicon samples prepared by ion implantation and pulsed

laser annealing. Sharp lines are observed in the Raman spectra due to the

1

2

C local mode at 604 ± 1 cm”* and the

1 3 C local mode at 589 ± 1 cm-1

. At the

highest carbon densities, these local

modes broaden considerably. Identical

spectra are obtained from a given carbon

implant whether it is annealed using a

1 0-ns pulsed ruby laser or a 1 -ps pulsed

rhosium 6G dye laser. It is shown that

Raman spectroscopy has sufficient sensitivity to detect striated carbon distributions in as-grown commercial silicon.

Finally, at high carbon density in the

implanted and laser-annealed samples, a disorder-induced first-order Raman spectrum is observed, produced by the mass defect of the substitutional carbon.

[Contact: (301) 921-3786]

Mayo, S., Lowney, J.R., and Bell, M.I.,

Evidence of Lattice Relaxation in

Platinum-Doped Silicon, Proceedings

of the Materials Research Society 1985

Spring Meeting, San Francisco, California, April 1 5-1 8, 1985, Vol. 46, pp.

297-306.

The photoionization cross section of the

platinum-acceptor level in silicon was measured (in relative units) as a function of photon energy. Capacitance

transients due to electron emission from

this level were studied in a p

+n gated

photodiode at temperatures of 40, 60,

and 80 K. Measurements were made over

the wavelength range of 2 to 5 |jm with

light from a prism monochromator with a constant bandpass of 1 0 meV. The platinum density in the diode was about 10 14 cm-3

, providing a ratio of deep to shallow (phosphorus) levels of about 1:10.

The data are in good agreement with the

Ridley-Amato lattice-coupling model when

a Huang-Rhys parameter of S = 0.3 is

used, corresponding to a Frank-Condon

shift of 15 meV if an average phonon

energy of 50 meV is assumed. The electronic energy of the acceptor level was

226 ± 5 meV below the conduction band,

independent of temperature and in agreement with previous studies of thermal

ionization. The present results provide

the first clear experimental evidence of

lattice relaxation associated with a deep level in silicon. However, the

observed Huang-Rhys parameter is smaller

than the theoretical estimates of

Lowther (S = 1), suggesting that multiphonon emission may not be the only

mechanism for carrier recombination

involving this level.

[Contact: (301) 921-3786]

Thurber, W.R., and Lowney, J.R., Electrical Transport Properties of Silicon,

VLSI Handbook, Chapter 14, N. G.

Einspruch, Ed. (Academic Press, NY,

1985) , pp. 1 77-190.

This short review of the electrical

transport properties of silicon was written as a chapter for a VLSI handbook. The titles of the seven sections

are: (1 ) Definition of Transport,

Transport Equation; (2) Conversion Between Resistivity and Dopant Density;

(3) Mobility of Charge Carriers; (4)

Temperature Dependence of Resistivity

and Mobility; (5) Dependence of Drift

Velocity on Electric Field; (6)

Minority-Carrier Mobility, Lifetime, and

Diffusion Length; and (7) Mobility in an MOS Inversion Layer. The chapter includes 5 tables, 7 figures, and 35 ref- erences.

[Contact: (301 ) 921-3786]

Analysis Techniques

Recently Published

Baghdadi, A., and Gladden, W.K., ADC
CEEE Technical Progress Bulletin - June 86 Page 3 Analysis Techniques , cont'd.

Errors in Quantitative FT-IR Spectroscopy, Proceedings of the SPIE - The

International Society for Optical Engineering, Vol. 553, Fourier and Computerized IR Spectroscopy, pp. 207-209

[paper given at conference, Ottawa,

Canada, June 24-28, 1 985].

Analog- to-digital converters (ADCs) are

the interface between the analog data

actually collected by a Fourier transform infrared (FT-IR) spectrophotometer

and the digital computer which processes

these data. In the typical case of

absorption spectra obtained using a broadband source, interferograms with a very wide dynamic range (typically on the order of 10 6 :1) are required in

order to produce spectra with adequate

signal- to-noise ratios. This is a very

demanding application, especially for a high-speed ADC. A numerical model of

the effect of ADC errors, of ±1 least

significant bit (LSB), shows that they

can produce errors as large as 50% on the height of peaks in an absorbance

spectrum at low signal levels. This

result is consistent with our experimental observations. Four ADC circuit

boards (all the same model) were tested

in the NBS FT-IR spectrometer. At low

signal levels, the disagreement between

peak heights in spectra collected using

the different ADC boards ranged as high

as 30%, even though none of them produced the low-wavenumber distortions

characteristic of inadequate ADC performance. The static transfer characteristics of each of the ADCs was determined using an automated test facility

at the National Bureau of Standards.

These tests showed that the boards produced errors ranging only up to 2 LSBs,

in qualitative agreement with our nu- merical model.

[Contact: (301 ) 921-3786]

Gallium Arsenide Materials

Recently Published

Forman, R.A., Bell, M.I., and Mayo, S.,

Rapid X-Ray Topographic Examination of

GaAs Crystals, Defect Recognition and

Image Processing in III-V Compounds, J. Fillard, Ed. (Elsevier, Amsterdam,

1985), pp. 55-62 [proceedings of

symposium held in Montpellier, France,

July 2-4, 1 985].

The design of a low-cost, high-throughput x-ray topography system is described, and its use in the the examination of commercial gallium arsenide

(GaAs) wafers is demonstrated. Doublecrystal reflection (Bragg) topographs

are obtained in two minutes and transmission (Laue) topographs in fifteen

minutes, using copper Ka radiation

from a conventional 1-KW, fine-focus,

laboratory x-ray source. Reflection

topographs of typical GaAs wafers using

selected diffracting planes are presented, and their relative sensitivity

to various defects discussed. In crystals grown by the liquid-encapsulated

Czochralski method, transmission topographs using the (022) planes display

the well-known large-scale dislocation

patterns produced by relaxation of thermoelastic stress.

[Contact: (301) 921-3786]

Power Devices

Released for Publication

Berning, D.W., Power MOSFETs and Resonant Power Conversion.

The power MOSFET is an ideal device for

use with the new voltage-controlled,

oscillator-driven, resonant power supplies. Care must be taken, however,

that it is used correctly. Several

different resonant power converter circuits are described, and details of

their use of semiconductors are given.

It is demonstrated that the MOSFET

drain-body diode can be used in resonant

converter circuits if the converter is

operated at or above resonance, but

should not be used if the converter is

operated below resonance.

[Contact: (301) 921-3621]
Page 4 CEEE Technical Progress Bulletin - June 86

Power Devices , cont'd.

Recently Published

Blackburn, D.L . , Turn-Off Failure of

Power MOSFETs, Proceedings of the

1 6th Annual IEEE Power Electronics

Specialists Conference, Toulouse,

France, June 24-28, 1985, pp. 429-435.

Experimental results of the failure of

power MOSFETs during turn-off are discussed. It is shown that the electrical

characteristics of these devices during

failure are identical to those of a bipolar transistor undergoing second

breakdown. Other comparisons of the

power MOSFET failure and bipolar second

breakdown are made. A nondestructive

measurement system is used, allowing

repeated measurements of the failure

characteristics as a function of various

parameters to be made on single devices.

It is shown that practical, commercial

power MOSFETs do not fail as a result of

dV(DS)/dt (rate of rise of drain voltage) currents. Drain voltage slew rates

up to 22 V/ns were studied. Other mea- surements show that the drain voltage at

which failure occurs increases with

temperature, the critical current above

which failure occurs decreases with

temperature, and the magnitude of the

load inductance has no effect on the

failure. The results of this study are consistent with the theory that activation of the parasitic bipolar transistor

initiates the power MOSFET failure.

[Contact: (301 ) 921-3621]

Insulators and Interfaces

Released for Publication

Chandler-Horowi tz , D. , Analytic Analysis of Ellipsometric Errors, to be

published as NBS Special Publication

400-78.

The purpose of this document is to give

ellipsometer users a computer program

that can identify the ellipsometric

inaccuracies for any ellipsometer, that

can be used to determine which parameters contribute the most to the overall

measurement inaccuracy, and that can lead to an optimum measurement procedure. A FORTRAN program that performs

the evaluation of the partial derivative

expressions needed to analyze ellipsometric measurement uncertainties is

listed. The program determines the

uncertainty in the calculation of the

refractive index of a bare isotropic

substrate or the uncertainty in the

determination of the thickness and re- fractive index of a non-absorbing film on a substrate of known refractive index. These are the two most commonly

used surface models in ellipsometry

performed with a single angle of incidence and a single wavelength. The

program input parameters include the

wavelength of the light, the angle of

incidence and its uncertainty, and the

uncertainties in the ellipsometric parameters DEL and PSI. They also include

in the ambient-substrate model an estimated value for the substrate's refractive index, and in the film- substrate

model the refractive index of the substrate and its uncertainty and values

for the film's refractive index and

thickness. The case of the conventional

null ellipsometer using a quarter-wave

plate is treated to find the uncertainties in DEL and PSI from the uncertainties in the polarizer and analyzer null

values and the waveplate constants.

[Contact: (301 ) 921-3625]

Mountain, D. J. , Russell, T.J., and Galloway, K.F., Effect of Post-Oxidation

Anneal on Electrical Characterization

of Thin Oxides, to be published in

the Extended Abstracts of the Electrochemical Society 169th Meeting, Boston,

Massachusetts, May 4-9, 1986.

The effect of pre- and post-oxidation

treatments on thin oxide electrical

characteristics was examined. Pre-oxidation clean and post-oxidation anneal

(POA) times and ambients were varied.

Three POA times and two gases (argon and

nitrogen) were compared. Flatband voltages, oxide breakdown fields, and interface trap densities were measured for
CEEE Technical Progress Bulletin - June 86 Page 5

Insulators & Interfaces , cont'd.

thin (20-nm) oxides. Interface trap

densities were measured using the

charge-punping technique. Data indicate

an optimum process can be designed. A

sacrificial oxidation cleaning sequence

and a long (120-min) POA in nitrogen

gave the oxide with the best electrical

characteristics.

[Contact: Thomas J. Russell (301) 921-

3621]

Wachnik, R.A., The Use of Charge Pumping to Characterize Generation by Interface Traps, to be published in

IEEE Transactions on Electron Devices.

A small rectangular pulse technique for

measuring the charge pumping current has

been proposed as a method to characterize interface traps near mid-gap. It is

shown theoretically and experimentally

that the small rectangular pulse technique can be used to predict the surface

generation current measured on a MOSFET

or a gated diode. This new technique

has the advantage that the measured

current is at least 10 to 100 times

larger than the surface generation current.

[Contact: Stanley Ruthberg (301 ) 921-

3625]

Recently Published

Chandler-Horowi tz, D. , El lipsometrie

Metrology of Ultrathin Films: Dual

Angle of Incidence, Proceedings of

the SP IE - The International Society

for Optical Engineering, Vol. 565,

Micron and Submicron IC Metrology, pp.

93-95 [paper given at conference, San

Diego, California, August 22-23,

1 985] .

Single angle of incidence ellipsome trie

measurements have been extended to dual

angle measurements on a newly con- structed multi-method precision ellipsometer in order to determine better the

optical constants of a substrate. Following the measurement error analysis

that was prescribed in an earlier paper

for single angle of incidence and fixed

wavelength measurements, the results for

dual angle of incidence are presented

here. Using an Explicit Error Analysis

( EEA) method, involving the differentials of the measurable optical con- stants of the surface, it is possible to

find a well-defined combination of incident angles to perform the measurement.

Without a measurement error analysis,

there would be no way to know what the

absolute measurement uncertainty is or what angles of incidence provide optimum

measurement conditions.

As was the case for the single angle of

incidence measurement where there was an optimum angle of incidence to assure the

highest measurement accuracy, the dual

angle of incidence measurement also predicts the two optimum angles of incidence. It was found that in the case of

single angle of incidence ellipsome try

,

the principal angle of incidence can sharply define the optimum angle for

measuring bare substrates and very thin

films on a substrate. Likewise, for the

dual angle of incidence measurement,

there can also be two sharply defined

angles for certain sample surface

models. Results are given for a dual

angle ellipsome trie measurement of the

real part of the refractive index of a silicon substrate at the wavelength of

632.8 nm. A silicon dioxide film thickness between 125 and 150 nm and the two

angles of incidence, 68 and 72 deg,

optimized this measurement. The real

part of the refractive index of the

silicon substrate was found to be 3.865

± 0 . 001 . [Contact: (301 ) 921-3625]

Dimensional Metrology

Recently Published

Kirk, C.P. , and Nyyssonen, D. , Modeling the Optical Microscope Images of

Thick Layers for the Purpose of Linewidth Measurement, Proceedings of the

SP IE - The International Society for

Optical Engineering, Vol. 538, Optical

Microlithography IV, pp. 179-187 [paper
Page 6 CEEE Technical Progress Bulletin - June 86

Dimensional Metrology , cont'd.

given at conference, San Francisco,

California, March 1 3-1 4, 1985].

A monochromatic, waveguide model is

presented which can predict the optical

microscope images of thick-layer objects

including multi-layer structures; sloping, curved, and undercut edges; granular structures such as polysilicon; and

asymmetric objects. The model is used

to investigate the effects of line

structure on the optical image, and good

agreement with experimentally obtained

optical image profiles is demonstrated.

Implementation of the model is described

by way of example, and the measurements

involved in the different stages of

manufacturing an MOS device are discussed.

[Contact: Robert D. Larrabee (301)

921-3625]

Nyyssonen, D. , Focused-Beam vs. Conventional Bright-Field Scanning Microscopy for Integrated Circuit Metrology,

Proceedings of the SPIE - The International Society for Optical Engineering, Vol. 565, Micron and Submicron IC

Metrology, pp. 102-1 07 [paper given at

conference, San Diego, California,

August 22-23, 1985] .

Current optical instrumentation being

developed for critical dimension mea- surements in the integrated circuit

industry is following one of two very

different optical designs, i.e., either

a focused laser beam which scans the

wafer or the more conventional brightfield microscope. Traditional optical

design lore has described these systems as "equivalent" based on the principle

of reciprocity. More recent research

has shown that the responses of these

two types of systems are not equivalent

for imaging of structures patterned in

thin films, such as those found in integrated circuit wafer fabrication. This

lack of reciprocity is the result of the

dependence of the diffraction pattern on

the angle of incidence of the illumination. The impact of the lack of reciprocity on the design and calibration of

critical dimension measurement systems

is discussed.

[Contact: Robert D. Larrabee (301)

921-3625]

Nyyssonen, D. , and Postek, M.T. , SEMBased System for Calibration of Linewidth SRMs for the IC Industry, Proceedings of the SPIE - The International Society for Optical Engineering,

Vol. 565, Micron and Submicron IC

Metrology, pp. 180-1 86 [paper given at

conference, San Diego, California,

August 22-23, 1985],

The National Bureau of Standards is

currently developing a new scanning

electron microscope-based linewidth

measurement system for future calibration of standard reference materials for

the IC industry. This system incorporates a piezo/interferometric stage

for precise translational motion and the

monitoring of distance, improved

vibration isolation, microprocessor

stage control system, and computer data

analysis. The specifications incorporated into the system are designed for

the measurement of linewidth dimensions

from 0.1 to 2 pm with a precision of

0.002 ym. The design philosophy of the

system is discussed along with the cur- rent limitations of accurate edge detection in SEM-based systems.

[Contact: Michael T. Postek (301)

921-3625]

Integrated Circuit Test Structures

Released for Publication

Ellenwood, C.H. , and Mattis, R.L., Release Notes for STAT2 Version 2.00A:

An Addendum to NBS Special Publication

400-75, to be published as NBS I

R

85-3292.

STAT2 is a FORTRAN program which is used

to analyze and display data from microelectronic test structures fabricated on semiconductor wafers. The program reads

data as a two-dimensional array, ex- tracts sample statistical values, iden-
CEEE Technical Progress Bulletin - June 86 Page 7

IC Test Structures , cont'd.

tifies outliers, calculates replacement

values for outliers, and makes histograms and circular gray-tone data maps.

Version 2.00A is an adaptation of STAT2

to run under Version 3.2 of the RSX-11M

operating system. This operating system

is used on the automatic tester which

acquires the test structure data. Data

can therefore be taken and analyzed on the same system.

[Contact: (301) 921-3801]

Mazer, J. A., and Ehrstein, J. R., Effect of Sintering on the Sheet Resistance Directly Under an Aluminum/Silicon Ohmic Contact, to be published in

the Extended Abstracts of the Electrochemical Society 169th Meeting, Boston,

Massachusetts, May 4-9, 1986.

Van der Pauw-type measurements with a specially designed test structure, and

spreading resistance measurements, indicate that the sheet resistance directly

under a sintered 1% Si-Al/Si ohmic con- tact is lower than the sheet resistance

of the diffused layer away from the

contact. These results agree with

transmission-line calculations made with

measurements from six-terminal Kelvin

test structures, and allcw an improved

calculation of the circuit-loading (or

front-contact) resistance.

[Contact: (301 ) 921-3801]

O'Keeffe, T.W., Cresswell, M.W., Linholm, L.W., and Radack, D. J. , Evaluation and Improvement of E-Beam Exposure Routines by Use of Microelectronic

Test Structures, to be published in

the Extended Abstract Digest of the

IEEE VLSI Workshop on Test Structures,

Long Beach, California, February 17-18,

1 986.

This paper describes the use of the

cross-bridge test structure in conjunction with a series of interconnect test

structures to assess and improve the

exposure routines and procedures in the

replication of submicron features. The

interconnect test structures used in

this experiment are resistors which

include both serpentine and comb-like

interconnect patterns and can be used to

assess line continuity and line-to-line

isolation. Results obtained during the

evaluation of line continuity, resolution, linewidth, and proximity exposure

effects are presented.

[Contact: Loren W. Linholm (301)

921-3801]

^Radack, D. J. , and Linholm, L.W., The

Application of Microelectronic Test

Structures for Propagation Delay, to

be published in the Extended Abstract

Digest of the IEEE VLSI Workshop on Test Structures, Long Beach, California^ February 1 7-1 8, 1 986.

This paper presents a comparison of the

ring oscillator, the inverter chain, and

the delayed Johnson counter for measurement of the propagation delay of an inverter. It describes design considerations that will improve the precision

and accuracy of the measurement. Modifications to the delayed Johnson counter

which allow timing comparisons to be

performed on-chip are also described.

[Contact: (301 ) 921-3801]

^Roitman, P. , Suehle, J. S . , Russell,

T.J. , and Gaitan, M., On the Measurement of Capacitance on Wafers, to be

published in the Extended Abstract

Digest of the IEEE VLSI Workshop on Test Structures, Long Beach,

California, February 1 7-18, 1986.

Capacitance measurements of both capacitor and transistor structures can provide critical parameters for process

monitoring, process modeling, device

modeling, and circuit modeling. However, accurate measurements of capacitance on small devices located on large

silicon wafers are very difficult. The

problem is simply that very low-level

analog measurements must be made at the

end of a necessary system of cables and

probes. Several authors have proposed

building capacitance meters on the

wafer, which would provide relatively

high-level outputs to the external test
Page 8 CEEE Technical Progress Bulletin - June 86

IC Test Structures , cont'd.

system. A method has been developed to

measure capacitance on wafers directly.

This work had three aspects: design of

the capacitor structures, design of the

probe fixturing, and instrumentation.

These are discussed in turn.

[Contact: (301) 921-3621]

Schafft, H.A., Grant, T. , Mandel, J. , and Shott, J. , Report on an Interlaboratory Experiment, to be published in the Extended Abstract Digest

of the IEEE VLSI Workshop on Ttest Structures, Long Beach, California,

February 17-1 8, 1986.

An inter laboratory experiment involving

1 5 laboratories and associated experiments conducted at NBS are described and

the results given. The twofold purpose

of the experiments is (1) to assess the

reproducibility of electromigration

characterizations made with equivalent

test structures by laboratories using

their own test methods and (2) to broad- en the technical base needed to develop

electromigration guidelines. Specially

designed test chips (NBS-42) , from one metallization lot, were used in the

experiments. The electromigration test

structures provided to the participating

laboratories are made of unpassivated,

sputter-deposited A1 1%Si on oxidized

Si.

[Contact: (301 ) 921-3801]

Recently Published

Cresswell, M.W., Linholm, L.W., Coleman,

E.S., and Partlow, W.D., Design,

Fabrication, and Testing of an Interconnect Test Structure for Evaluating

VLSI Processes, 1985 Digest of

Papers, Government Microcircuit Applications Conference (GOMAC), Orlando,

Florida, November 5-7, 1985, pp. 359-

360.

This paper describes a systematic approach to the comparative experimental

evaluation of alternative sub-micron

lithographic methods using microelectronic test structures. Measurements

are presented for both polysilicon and

aluminum lines with design geometries of

0.6 to 2.0 pm. Ihese structures provide

unambiguous results which can be used as

a tool to improve the control and performance of VLSI devices.

[Contact: Loren W. Linholm (301) 921-

3801]

Lie, L. , Pramanik, D. , Saxena, A.N.,

Mazer, J.A., and Linholm, L.W., Contact Resistance of Al-1%Si-0.5%Cu and

Al/TiW/PtSi Metallization, Proceedings of the 1985 IEEE VLSI Multilevel

Interconnection Conference, Santa

Clara, California, June 24-26, 1985,

pp. 201-210.

The specific contact resistivity, p c , has been measured using six-terminal

Kelvin contact resistor test structures

with contacts of varying sizes. Values

of p c were determined for Al-1%Si0.5%Cu metallizations to n+ and p

+ sili- con junctions having different surface

concentrations, CQ

. The magnitude of

p c was found to decrease with increasing CQ

. Values of p c were also

determined for Al/TiW/PtSi contact

metallizations to n+ and p

+ and were found to be at least two times lower

than that for Al-Si metallization.

Also, the variation of p c across the

wafer for PtSi was found to be less than

that for Al-Si. This indicates that

Al/TiW/PtSi metallizations offer advantages when compared to Al-Si metallization and can contribute to improved

performance of future VLSI circuits.

[Contact: Jeffrey A. Mazer (301 ) 921-

3801]

Linholm, L.W., Yen, D. , and Cresswell,

M.W., Electrical Linewidth Measurement in the Near- and Sub-Micron Linewidth Region, Proceedings of the

Third Electrochemical Society International Symposium on VLSI Science and

Technology, Toronto, Canada, May 12-17,

1 985, pp. 299-308.

The measurement accuracy of the cross- bridge resistor test structure and test

method has been compared to well-ch.ir.n--
CEEE Technical Progress Bulletin - June 86 Page 9

IC Test Structures , cont'd.

terized optical measurements for samples

with near-micron and sub-micron design

dimensions patterned in polysilicon

films. Results are presented which show

that the electrical measurements agree

with the corresponding optical measurements to within the respective uncer- tainties of both measurements.

[Contact: (301 ) 921-3801]

Radack, D.J., Yao, C.T. , Linholm, L.W.,

Galloway, K. F., and Lin, H.C., Comparison of Microelectronic Test Structures for Propagation Delay Measurements, Microelectronics Journal, Vol.

16, No. 6, pp. 39-46 (1985).

Propagation delay is a parameter which

needs to be accurately measured for

characterization of VLSI fabrication

technologies and VLSI circuit design.

In this experiment, three different

microelectronic test structures or test

circuits were used to measure the propagation delay of a minimally sized CMOS

inverter. The measured results and a comparison of the test circuits are presented.

[Contact: (301) 921-3801]

Roenker, K.P. , Harner, B.L., and Linholm, L.W., An NMOS Test Chip for

Instruction in Semiconductor Parameter

Measurements, Proceedings of the

Sixth Biennial University/Government/Industry Microelectronics Symposium, Auburn, Alabama, June 1 1-1 3, 1 985,

pp. 77-81.

This paper describes an NMOS test chip,

NBS-40, designed for use in a graduatelevel course in the measurement of semiconductor parameters using test structures. The rationale and objectives of

a parameter measurements course are discussed, and the organization and

results of a course offered at the University of Cincinnati are described.

The test chip layout and test structures

are briefly described, and parameter

measurements using the test structures

are discussed. An NBS technical report

describing the test chip has been prepared and is available as a student

reference [NBS IR 84-2822] . Examples of

recent measurement results obtained on chips fabricated through the MOSIS

service are provided to demonstrate the

functionality of the chip.

[Contact: Loren W. Linholm (301) 921-

3801]

Schafft, H.A., Standards for Electromigration Testing, Final Report, 1984

Wafer Reliability Assessment Workshop,

Lake Tahoe, California, September

30-October 3, 1 984, pp. 91-1 06 (1985).

This is an edited transcript of a talk

given at the 1984 Wafer Reliability

Assessment Workshop which includes questions, comments, and responses. The

talk described plans for an interlaboratory experiment and other work that is

intended to lead to an improved way for

characterizing metallizations from the

point of view of electromigration. The

talk outlined the steps of the interlaboratory experiment, discussed some of

the design features of the test structures to be used, described the electromigration test chip, and mentioned some

of the experiments that are to be performed.

[Contact: (301) 921-3801]

Schafft, H.A., Grant, T.C., Saxena,

A.N. , and Kao, C.-Y. , Electromigration and the Current-Density Dependence, Proceedings of the 23d Annual

International Reliability Physics Symposium, Orlando, Florida, March 26-28,

1 985, pp. 93-99.

The empirical expression used to predict

metallization resistance to electromigration failure involves the current

density to a power of n. A value for n of 1.5 was obtained from stressing

unpassivated Al-1%Si metallization test

structures over a range of current

densities of from 0.5 to 2.5 MA/cm-.

The steps taken to ensure an accurate

estimate of the metallization stress

conditions of temperature and current

density to obtain this value are
Page 1

0

CEEE Technical Progress Bulletin - June 86

IC Test Structures , cont'd.

described in detail.

[Contact: (301) 921-3801]

Process and Device Modeling

Released for Publication

Albers, J. , Some Aspects of Spreading

Resistance Profile Analysis, to be

published in Emerging Semiconductor

Technology, ASTM STP 960, D.C. Gupta

and P.H. Langer, Eds. (American Society

for Testing and Materials, 1986).

The calculation of resistivity profiles

(and carrier density profiles) from

spreading resistance requires the use of

a correction factor. The present status

of the calculation of the correction

factor based upon the Schumann and

Gardner multilayer solution of Laplace'

s

equation is reviewed and discussed.

Recent calculations of carrier densities

from atomic densities are also discussed. In particular, the numerical

solutions of the semiconductor equations

are reviewed, and their implications in

the interpretation of spreading resistance measurements for profiling shallow

layers are presented. The limitations

of the multilayer Laplace equation analysis of spreading resistance in VLSI

profiling are also discussed.

[Contact: (301) 921-3621]

Bennett, H.S., Band Structure and

Density of States Changes in Heavily

Doped Silicon.

The Klauder self -energy method is applied to calculating the effects of

one-body interactions among the dopant

ions and the carriers in heavily doped

silicon at 300 K. Many-body interactions of exchange energy for majority

carriers and of correlation energy for

minority carriers are estimated by interpreting optical absorption measure- ments and by calculations based on degenerate theory. When densities exceed

5 x 10 19 cm-9

, one-body and many-body

terms become of the same order of magnitude and should be included in calculations of band-structure changes and of

properties such as carrier transport

which depend on the density of states.

[Contact: (301) 921-3621]

Recently Published

Albers, J. , Monte Carlo Calculation of

One- and Two-Dimensional Particle and

Damage Distributions for Ion-Implanted

Dopants in Silicon, IEEE Transactions

on Electron Devices, Vol. ED-32, No.

10, pp. 1930-1939 (1 985) [joint issue

with IEEE Transactions on ComputerAided Design, Vol. CAD-4, pp. 374-383]

.

The two-dimensional distributions of

particles, primary damage, Frenkel

pairs, and electronic and nuclear energy

loss were calculated for implantation of

a line source into silicon targets by

using the TRIM Monte Carlo code. In

addition, the Kinchin-Pease equation was used to calculate approximate twodimensional distributions of the Frenkel

pairs (vacancy-interstitial) created by

the primary displacement damage of the

target atoms. These distributions allowed for the calculation of the one- dimensional distributions of these quantities for implantation into unmasked

targets. The two-dimensional distributions of particles and approximate

Frenkel pairs for implantation past a mask edge were constructed by means of

superposition. The results are important for understanding the mass, energy,

and dose dependence of implantation and

the associated displacement damage.

[Contact: (301) 921-3621]

Albers, J. , and Berkowitz, H.L. , An

Alternative Approach to the Calculation

of Four-Probe Resistances on Nonuniform

Surfaces, Journal of the Electrochemical Society, Vol. 132, No. 10, pp.

2453-2456 (1985) .

An alternative approach to the calculation of four-probe resistances of structures having nonuniform resistivity is

presented. The basis of this approach

is the form of the spreading resistance
CEEE Technical Progress Bulletin - June 86 Page 1

1

Process & Device Modeling , cont'd.

correction factor integral as given by

Berkowitz and Lux. When this form is

used, the difference of the spreading

resistances involved in the four-probe

resistance may be written as a simple

integral which does not contain Bessel

functions. Also, the derivative of the

spreading resistance which is involved

in the probe-spacing experiment simulation yields a simple algebraic expression. The resulting equations for the

four-probe resistance and the derivative

function are formally shown to be independent of both the probe radius and the

probe-current density and involve only

the kernel of the spreading resistance

correction factor integral (sometimes

known as the integrating factor) . For

the case of a uniform layer over insulating, conducting, or no boundaries (a

semi-infinite slab) , analytic expressions are derived for the four-probe

resistance and the derivative function

and are investigated as a function of

the probe spacing. For nonuniform

resistivity structures, a relatively

simple numerical procedure is used for

the evaluation of the four-probe resistance integral. The results obtained

from this numerical technique for the

four-probe resistance and the algebraic

expression for the derivative function

are compared with those obtained from

more extensive numerical techniques and

are shown to be in excellent agreement.

The evaluation of the four-probe resistance and the derivative function by

means of the variational technique

described by Choo and coworkers is presented. A caveat concerning the use of

the Gauss-Laguerre technique for calculating the four-probe resistance is also

discussed.

[Contact: (301) 921-3621]

Bennett, H.S., and Fuoss, D.E., Improved Physics for Simulating Submicron

Bipolar Devices, IEEE Transactions

on Electron Devices, Vol. ED-32, pp.

2069-2078 (1 985) [joint issue with IEEE

Transactions on Computer-Aided Design,

Vol. CAD-4, pp. 51 3-522 (1 985)].

The conventional device physics in most

numerical simulations of bipolar transistors may not predict correctly the

measured electrical performance of shallow, heavily doped emitters and bases.

This paper presents improved device

physics for numerical simulations of

solid-state devices with dopant densities up to about 3 x 10 20 cm2

and with

junction depths as small as 0.1 ym.

This improved device physics pertains to

bandgap narrowing, effective intrinsic

carrier concentrations, carrier mobilities, and lifetimes. When this improved

device physics is incorporated into

device analysis codes such as SEDAN and

then used to compute the electrical

performance of npn transistors, the

predicted values agree very well with

the measured values of the currentvoltage characteristics and dc common- emitter gains for junction depths between 10 ym and 0.16 ym.

[(301) 921-3621]

Marchiando, J.F., Roitman, P. , and

Albers, J. , Verification of a Model

for Boron Diffusion in Silicon, IEEE

Transactions on Electron Devices, Vol.

ED- 32, No. 11, pp. 2322-2330 (1985).

Understanding the effects of high- and

low- temperature anneals of boron implanted in silicon is important in the

calculation of shallow p-n junction

profiles used as source and drain in

p-channel MOSFETs . Here, a sample ma- trix of boron implanted into silicon

over a range of fluences and annealing

temperatures is considered. The matrix

of samples was measured by SIMS (secondary ion mass spectrometry) . The mea- sured profiles were compared with simulations from an annealing/diffusion

model. Calculations of the annealed

profiles were found to be in agreement

with the SIMS data at temperatures

greater than 1 000°C. At lower temperatures, the profiles exhibit effects due

to implantation damage which are not

included in the diffusion model.

[Contact: (301 ) 921-3621]

Roitman, P. , Wilson, C.L. , Blue, J.L.,
Page 1 2 CEEE Technical Progress Bulletin - June 86

Process & Device Modeling , cont'd.

and Galloway, K.F., Measurements for

Accurate MOS Transistor Simulation,

Proceedings of the Third International

Workshop on Physics of Semiconductor

Devices, Delhi, India, November

27-December 2, 1985, pp. 69-77.

Measurements and input data required for

accurate numerical simulation of MOS

transistor characteristics are described. Techniques for determining

dopant atom distributions, geometric

parameters, and carrier mobility in the

channel are discussed. The results are used to simulate the electrical characteristics of self -aligned, silicon-gate,

n-channel MOSFETs with phosphorus

source-drains having channel lengths of

0.80 pm, 1.83 ym, and 8.17 ym. It is

possible to model the drain current for

all of the transistors studied without

adjustable parameters. If sufficiently

accurate parameters are available, the

characteristics of submicron transistors

can be predicted with ±5% accuracy.

[Contact: (301) 921-3621]

Wilson, C.L., Using Silicon Device

Modeling Techniques for GaAs Devices,

Technical Digest, 1985 International

Electron Devices Meeting, Washington,

D.C., December 1-4, 1985, pp. 78-81.

Numerical models have been developed for

Si MOSFETs which achieve high accuracy

and retain numerical stability and physical flexibility. The methods used in

these models can be applied to GaAs

MESFETs to yield a computer model which

retains the accuracy and robust numerical properties of two-dimensional Si

MOSFET models, yet retains most of the

physical detail of Monte Carlo simulation. Two significant differences between this model and previous models

result. First, by incorporating intraband scattering directly, high field

regions of the device are seen to be

dominated by alternate regions in which

conduction by central valley and satellite valley electrons dominate. Second,

the two-dimensional field shape in the

part of the transistor between the gate

and the drain is critical in calculating

the intraband scattering and in determining the average effective mobility.

[Contact: (301) 921-3621]

Wilson, C.L., and Blue, J.L. , Accurate

Current Calculation in Two-Dimensional

MOSFET Models, IEEE Transactions on Electron Devices, Vol. ED-32, No. 10,

pp. 2060-2068 (1985) [joint issue with

IEEE Transactions on Computer-Aided

Design, Vol. CAD-4, pp. 504-512

(1 985) ] .

Two-dimensional simulations of MOSFETs are widely used for the design of shortchannel transistors used in VLSI circuits. These models use low-order methods of discretization of solution variables. In this paper, a method of cur- rent calculation is presented which

works with these methods and yields good

accuracy. The method uses integration

of the solution variables, rather than

differentiation, and is similar to applying Ohm's law in two dimensions.

[Contact: (301) 921-3621]

Wilson, C.L. , Roitman, P. , and Blue,

J.L. , High Accuracy Physical Modeling

of Subnicron MOSFETs, IEEE Transactions on Electron Devices, Vol. ED-32,

No. 7, pp. 1246-1 258 (1985).

Using the data obtained from the mea- surements described in this work, it is

possible to model the drain current for

all of the transistors studied with no adjustable parameters. Transistors with

0.81-ym channel length differ in model

input from those with 8.17-ym channel

length only in the length of the polysilicon gate. The accuracy of the simulation is maintained over the subthreshold, triode, and saturation regions and

is comparable for all channel lengths.

[Contact: (301 ) 921-3621]

Wilson, C.L . , and Russell, T.J., TwoDimensional Modeling of Channel HotElectron Effects in Silicon MOSFETs,

Tech. Digest, 1985 International Electron Devices Meeting, Washington, D.C.,
CEEE Technical Progress Bulletin - June 86 Page 1

3

Process & Device Modeling , cont'd.

December 1-4, 1985, pp. 72-75.

Earlier models have successfully modeled

currents associated with device degradation due to channel hot-electrons. In

this work, a high accuracy twodimensional model of a silicon MOSFET is

combined with a model of the Si0

2 -Si

interface which includes both the energy

dependence of the interface traps within

the silicon bandgap and the positional

dependence of the oxide charge and the

interface traps along the channel of the

transistor. This model allows the

effects of channel hot-electrons on the

sub threshold, linear, and saturation

region after injection of the device to

be modeled without introducing free

parameters.

[Contact: (301) 921-3621]

Witte, L.C., CSFIT: A FORTRAN Program

for Charge-Sheet Model Fitting of

MOSFET Data, NBSIR 85-3145 (November

1 985) .

A FORTRAN program, CSFIT, has been developed tor fitting an expression for

the current-voltage (I-V) characteristics of a long-channel MOSFET to experimental I-V curves. The one-dimensional

charge-sheet model developed by Brews

provides the basis for the I-V characteristics. The I-V characteristics

given by this model are optimized with

respect to a set of experimental data

using the flatband voltage and the mo- bility as the only adjustable parameters. The program is written so that

multiple sets of I-V data can be fit

simultaneously if desired. The user must supply, in specified formats, a current-voltage data file, a device

parameter file, and a starting value

file.

[Contact: Charles L. Wilson (301) 921-

3621]

Radiation Effects

Recently Published

Galloway, K.F., Wilson, C.L., and Witte,

L.C., Charge-Sheet Model Fitting to

Extract Radiation-Induced Oxide and

Interface Charge, IEEE Transactions

on Nuclear Science, Vol. NS-32, pp.

4461 -4465 ( 1 985) .

A method for extracting values of oxide

and interface charge from the currentvoltage (I-V) characteristics of longchannel MOSFETs is described. The one- dimensional charge-sheet model developed

by Brews provides the basis for the I-V

characteristics. The I-V characteristics given by this model are optimized

with respect to a set of experimental

data for an irradiated device with the

flatband voltage and the mobility the

only free parameters. Simple relationships between these parameters and the

radiation-induced interface and oxide

charge are assumed.

[Contact: (301) 921-3541]

Galloway, K.F., Wilson, C.L., and Witte,

L.C., MOSFET Electrical Parameter

Extraction from Charge-Sheet Model

Fitting, Proceedings of the Sixth

Bi ennial University/Government/ Indus try

Microelectronics Symposium, Auburn,

Alabama, June 1 1-1 3, 1 985, pp. 77-81.

A method for extracting the flatband

voltage and the channel mobility from

the current-voltage (I-V) characteristics of long-channel MOSFETs is described. The one-dimensional chargesheet model developed by Brews provides

the basis for the I-V characteristics.

The I-V characteristics given by this

model are optimized with respect to a set of experimental data with the flatband voltage and the mobility che only

free parameters. A computer program,

CSFIT, has been developed for this purpose. The choice of parameters is usually appropriate for a device subjected

to a stress condition (e.g., hot-carrier

injection or ionizing radiation) . To

illustrate the application of this method and CSFIT, the flatband voltage and

mobility for an n-channel enhancementmode device subjected to ionizing radia-
Page 1

4

CEEE Technical Progress Bulletin - June 86

Radiation Effects , cont'd.

tion are determined from the I-V curves,

and the changes of these parameters with

radiation dose are tracked.

[Contact: (301) 921-3541]

Packaging

Recently Published

Oettinger, F.F., Thermal Measurements

of VLSI Packages - A Critical Overview, Abstracts of the IEEE VLSI

Packaging Workshop, Gaithersburg, Maryland, September 9-11, 1985, pp. 26-29.

Techniques to characterize thermally

ceramic and plastic VLSI packages are discussed. Computer simulations and

both direct and indirect thermal evaluation techniques are highlighted. Limitations and strengths of the various

techniques are identified.

[Contact: (301 ) 921-3541]

Other Semiconductor Metrology Topics

Released for Publication

Zaghloul, M.E. , An Overview of Testability Measures in the Design of Digital Integrated Circuits.

This paper is an overview of testability

measures in the design of digital integrated circuits. Commercial testability

algorithms are described and compared.

Recent developments on testability mea- sures which enhance the role of testability are discussed.

[Contact: Loren W. Linholm (301) 921-

3801 ]

Recently Published

Stern, E.A., Ma, Y. , and Bouldin, C.E.,

The Local Structure at Mn Sites in

Icosahedral Mn—Al Quasicrystals,

Physical Review Letters, Vol. 55, No.

20, pp. 2172-21 75 ( 1985).

Extended x-ray absorption fine structure

(EXAFS) measurements have been made at

the Mn K-edge of quasicrystalline and

crystalline forms of an Al^Mn alloy.

Two different quasicrystalline Mn sites are discerned to be populated in the

ratio of t within experimental error. The more populous site is similar to

that in the crystal but with bond angle

distortions and elimination of an unusually short Al-Mn bond, while the other

site has additional bond stretching

distortions. The EXAFS measurements

together with density measurements indicate that the volume per Mn-site is

independent of type of site, suggesting

that the quasicrystal is not a Penrose

lattice.

[Contact: Charles E. Bouldin (301)

921-3786]

FAST SIGNAL ACQUISITION, PROCESSING, &

TRANSMISSION

Waveform Metrology

Recently Published

Bell, B.A., Editor, Digital Methods in

Waveform Metrology, Proceedings of a Seminar, NBS Special Publication

707 (October 1985) .

Modern electronic instrumentation me- trology in the lcw-f requency regime

(dc to 10 MHz) was discussed in lecture

talks and papers presented at NBS,

Gaithersburg, MD, on October 18-19,

1983. The seminar program was organized

into four main session topics.

This special publication contains independent papers that enlarge on subjects

presented at the seminar. Six papers

represent and describe the hardware anti

software techniques used for developing

NBS laboratory standards and apparatus

for testing ac sources and voltmeters,

phase angle meters, transient waveform

recorders, wideband wattmeters, and

digi tal- to-analog and analog- to-digi ta

1

converters. Three papers have been

written to supplement the informal ses- sion on Instrumentation Metrology and are included as Appendices.

[Contact: (301) 921-2727]
CEEE Technical Progress Bulletin - June 86 Page 1

5

Waveform Metrology / cont'd.

Flach, D.R., Characterization of Waveform Recorders, Digital Methods in

Waveform Metrology, Proceedings of a Seminar, NBS Special Publication 707,

pp. 31-54 (October 1985).

Transient waveform recorders have been

in use for more than 15 years with no commonly accepted test procedures for

measuring the performance of these instruments in response to dynamic input

signals. One test procedure that has

been increasingly used by manufacturers

and others in recent years involves the

application of steady-state sinusoidal

waveforms. These tests measure integral

and differential linearity errors, missing codes, signal- to-noise ratios (effective number of bits) , and aperture

uncertainty.

Described are sine-wave tests that use non-linear, least-square curve fit procedures to measure the waveform re- corder' s noise, and thus the signalto-noise ratio. This approach yields a "global" description of the recorder's

errors. A sine-wave test in which the

data are evaluated using a fast Fourier

transform is described. This test is

particularly useful to measure the integral linearity errors of the waveform

recorder. A histogram test, which measures differential linearity errors and

missing codes, is described. Results

are given for the above tests. A method

for measuring aperture uncertainty is

briefly mentioned.

Two NBS-developed test procedures, a single-period transient sinusoidal test

and a test based on the NBS voltage-step

generator, are also described, and test

results are given.

[Contact: (301) 921-2727]

Halford, D. , Transparency Metrology of

Signal to Noise Ratios of Noisy BandLimited Digital Signals, NBS Tech.

Note 1 077 (June 1985) .

I propose the use of a template method

for quantitative, correct, and transparent measurement of signal power to

additive noise power ratios (SNRs) of

digital signals and systems under full

operating conditions. Outer guard chips

of digital templates hold intersymbol

interference fixed on inner target chips

in realizations of the respective template patterns in traffic. The proposed

template method needs to be developed

and proven as a potentially valuable

metrology capability; it can be especially important for real-time on-line

performance assessment and monitoring of

digital communication systems.

A correct measurement procedure by definition actually measures a specified

parameter of a specified signal, channel, device, or system. A transparent

measurement procedure by definition

measures the specified parameter without

degradation of the usable channel capacity and without modification to or interference with the functioning of the

measured system.

I discuss the significance of transparent metrology, the measurement of

various SNRs by the template method, and

the general applicability of the template method for measurements on any

noisy digital signal. The template

method can provide transparent metrology

procedures for other basic measurands,

e.g. , intersymbol interference, multiplicative noises, and synchronization.

[Contact: (303) 497-5475]

Laug, O.B., A Wide-Band Transconductance Amplifier for Current Calibrations, IEEE Transactions on Instrumentation and Measurement, Vol. IM-34,

No. 4, pp. 639-643 (December 1985).

A wide-band transconductance amplifier

for current calibrations is described.

The amplifier will deliver a groundreferenced constant current of 5 A rms from dc to over 100 kHz. Its stable

magnitude and phase permit it to be used

in precise power calibration systems to

provide the current component of a phantom power source. The amplifier also
Page 1

6

CEEE Technical Progress Bulletin - June 86

Waveform Metrology , cont'd.

provides a ground-referenced voltage

output of 1 V/A for monitoring the magnitude and phase of the output current.

[Contact: (301) 921-2727]

Laug, O.B., Stenbakken, G.N. , and Leedy,

T.F., Electrical Performance Tests

for Audio Distortion Analyzers,

NBSIR 85-3269 (November 1985).

Electrical performance test procedures

for audio distortion analyzers were developed by the National Bureau of

Standards for the U.S. Army Communications-Electronics Command. The report

provides detailed, step-by-step test

procedures that are based on specifications supplied by the Army for the

purpose of evaluating audio distortion

analyzer bid samples. Examples of data

sheets and tables are also provided for

recording interim and final results.

The report discusses the philosophy of

each measurement procedure with a view

toward providing an understanding of the

basic metrology required to perform the

measurements. In addition, the sources

of measurement error are discussed. The

primary applications and basic principles of modern audio distortion ana- lyzers are also described.

[Contact: (301) 921-2727]

Major, J.R., Livingston, E.M., and

Adair, R.T . , Automated Measurement of

Frequency Response of FrequencyModulated Generators, Using the Bessel

Null Method, Proceedings of the 4th

Annual Test and Measurement World Expo,

San Jose, California, May 14-1 6, 1985,

pp. 78-1 00.

This paper describes a method for determining the frequency response of

frequency -modulated generators, using a Bessel null method to control frequency

deviation of the test signal applied to

the generator. This test signal is in

the form of a frequency-modulated radiofrequency carrier. A listing is provided of the computer program used in

automating the method. The method applies to generators having an output

frequency in the range 0.45 to 2000 MHz.

Measurements obtained using this technique are more accurate than those obtained by a highly trained technician

using a manual system.

Automated measurement of this process is

desirable since the manual method is

subject to the following problems: (1)

excessive time, (2) error in finding the

null, and (3) lack of assurance that the

null is the first Bessel null. Automated measurements can be performed

using a system controller, a spectrum

analyzer, a function generator, and a voltmeter (all of which are compatible

and controllable remotely).

The nonlinear relationship between modulating signal amplitude and the center

frequency amplitude of the carrier is a major obstacle to automated measurement.

This problem was solved by obtaining an approximate formula for this nonlinear

curve.

Assurance that the null found is the

first Bessel null is provided by the

analysis of the frequency response of

the test signal generator as displayed

on the spectrum analyzer.

[Contact: (303) 497-3149]

Oldham, N.M., Digital Waveform Synthesis Techniques, Digital Methods in

Waveform Metrology, Proceedings of a Seminar, NBS Special Publication 707,

pp. 1-13 (October 1985).

The theory of digital waveform synthesis, including hardware implementations

and practical limitations, is discussed.

The generation of sinewaves as well as arbitrary waveforms using zero-orderhold and linear-point-connector recon- struction techniques is analyzed. An NBS-deve loped sinewave generator which

provides a high-accuracy (50-ppm) signal

from dc to 50 kHz is also described.

[Contact: (301) 921-2727]
CEEE Technical Progress Bulletin - June 86 Page 1

7

Waveform Metrology , cont'd.

Schoenwe tter, H.K., A Programmable

Precision Voltage-Step Generator for

Testing Waveform Recorders, IEEE

Transactions on Instrumentation and

Measurement, Vol. IM-33, No. 3, pp.

196-200 (September 1984).

A pulse generator for testing the approximate step-response of waveform

recorders is described. The initial and

final levels of voltage steps are each

programmable within the range of ±1 V

for a 50-ft termination and within ±5 V

for a high-impedance load. Voltage

steps within these ranges settle to

within ±0.02 percent of full-scale range

in less than 30 and 40 ns, respectively,

for a load capacitance of <30 pF. Ihe

corresponding 10- to 90-percent transition durations are approximately 7 and

1 2 ns. [Contact: (301 ) 921-2727]

Schoenwe tter , H.K. , Settling Time

Measurements, Digital Methods in

Waveform Metrology, Proceedings of a Seminar, NBS Special Publication 707,

pp. 87-109 (October 1985).

Methods are described for measuring the

settling times (STs) and other dynamic

characteristics of digi tal-to-analog

converters, operational amplifiers, and

precision voltage-step generators. The

measurement of device STs from 5 ys to

less than 20 ns with corresponding

accuracies of 1 ppm and 0.1% is

described.

[Contact: (301) 921-2727]

Souders, T.M., Data Converter Test

Methods, Digital Methods in Waveform

Metrology, Proceedings of a Seminar,

NBS Special Publication 707, pp. 75-85

( October 1985) .

Data converter test methods pertinent to

measurement or control instrumentation

applications are reviewed. Methods

ranging from simple manual techniques to

comprehensive fully automated approaches

are discussed for both digi tal-to-analog

and analog- to-digi tal converters.

Strengths and weaknesses, major applications, and pertinent references are presented for each.

[Contact: (301) 921-2727]

Souders, T.M., and Stenbakken, G.N.

,

Modeling and Test Point Selection for

Data Converter Testing, Proceedings

of the 1985 IEEE International Test

Conference, Philadelphia, Pennsylvania,

November 19-21 , 1985, pp. 813-817.

Methods for generating efficient testing

strategies for data converters are presented. Linear modeling techniques

based on circuit analysis and empirical

test data are included, as well as algorithms for selecting optimal test

points. Using these tools, converter

errors can be accurately estimated for

all code states from a relatively small

number of measurements.

[Contact: (301 ) 921-2727]

Stenbakken, G.N. , Dual-Channel Sampling Systems, Digital Methods in Waveform Metrology, Proceedings of a Seminar, NBS Special Publication 707, pp.

55-73 (October 1985).

Measuring two signals simultaneously

with a dual-channel sampling system

allows for the calculation of many signal parameters not easily obtained with

single-channel instruments. This paper

concentrates on the use of dual-channel

sampling for the measurement of power

and phase angles. Theoretical interrelationships are developed for sampled

data, measured quantities, and error

sources. Both hardware and software

errors are described. Calibration techniques are given for quantifying many of

the error sources.

[Contact: (301) 921-2727]

Stenbakken, G.N., Souders, T.M., Lechner, J.A., and Boggs, P.T., Efficient

Calibration Strategies for Linear, Time

Invariant Systems, Proceedings Autotestcon '85, IEEE International Automatic Testing Conference, Uniondale,

New York, October 22-24, 1985, pp.
Page 1

8

CEEE Technical Progress Bulletin - June 86

Waveform Metrology , cont'd.

361-366.

An efficient strategy for accurately

characterizing the frequency response of

linear, time-invariant systems is presented. The approach, based on circuit

modeling, test-point selection, and

parameter estimation, optimizes calibration confidence with respect to test

effort. The analytic tools and methodology needed for designing the strategy are included, together with experimental results. The approach can be

particularly beneficial in volume testing of devices such as amplifiers, attenuators, and filters, or systems whose

frequency response is dominated by such

d e vi c e s

.

[Contact: (301) 921-2727]

Turgel, R.S., Phase Angle Standards

and Calibration Methods, Digital

Methods in Waveform Metrology,

Proceedings of a Seminar, NBS Special

Publication 707, pp. 15-29 (October

1 985) .

Measurement of phase angles in the audio

frequency range is discussed with emphasis on precision phase meters and their

calibration using an NBS-developed Phase

Angle Calibration Standard.

[Contact: (301) 921-2727]

Turgel, R.S., A Precision Phase Angle

Calibration Standard for Frequencies up

to 50 kHz, IEEE Transactions on Instrumentation and Measurement, Vol.

IM-34, No. 4, pp. 509-516 (December

1 985) .

A phase angle calibration standard cov- ering a frequency range from 2 Hz to 50

kHz has been designed and constructed.

Digital waveform generation is used to

provide sinusoidal analog outputs having

precisely settable phase angles. Output

voltages are independently adjustable

from 0.5 to 100 V rms on both channels.

An auto-zero feed-back loop compensates

for differential phase errors of the

output amplifiers.

[Contact: (301) 921-2727]

Cryoelectronic Metrology

Recently Published

Niemeyer, J. , Hinken, J.H. , and Kautz,

R.L. , Near-Zero Bias Arrays of

Josephson Tunnel Junctions Providing

Standard Voltages Dp to 1 V, IEEE

Transactions on Instrumentation and

Measurement, Vol. IM-34, No. 2, pp.

185-187 (June 1985)

.

Josephson voltage standards utilize

microwave-induced constant voltage steps

occurring due to the ac Josephson effect. Existing standards can be considerably simplified and their accuracy

improved by using a large number of

series-connected Josephson tunnel junctions which are operated in the zero- current-step mode. For this purpose,

superconducting millimeter wave integrated circuits have been designed,

fabricated, and tested. The circuits

consist of a broadband taper between the

rectangular waveguide and the planar

structure, the Josephson junction

series, a well-matched load, and dc

pads. Circuits with various numbers of

junctions have been fabricated by photolithographic techniques and tested at

4.2 K in liquid heliun. The version

with 1474 junctions produced voltages up

to 1.2 V when operated at 90 GHz.

[Contact: Richard L. Kautz, (303)

497-3391 or -3988]

Antenna Metrology

Released for Publication

Lewis, R.L. , and Newell, A.C., An

Efficient and Accurate Method for

Calculating and Representing Power

Density in the Near-Zone of Microwave

Antennas, to be published as NBSIR

85-3036.

An algorithm is presented for

calculating near-zone and Fresnel-reqion

fields in front of microwave antennas

from discrete numerical values of the
CEEE Technical Progress Bulletin - June 86 Page 1

9

Antenna Metrology , cont'd.

radiated plane-wave spectrum (complex

far-field pattern) . That is, the near

fields are calculated by numerically

integrating the plane-wave spectrum

representation of the field. The crux

of the analysis consists of handling a numerical instability which arises from

integrating discrete data. A criterion

is developed for limiting the

integration domain in order to exclude

highly oscillatory regions of the

integrand. In turn, this leads to

restrxcting the applicable output range

over which the field can be computed.

With the numerical instability problem

thus resolved, fast Fourier transform

techniques are used to assure efficient

numerical integration over a large (but

restricted) output range. The results

are conveniently presented as relative

power-density contours in planes formed

by the longitudinal coordinate axis and

one transverse coordinate axis. The

algorithm is capable of extremely high

accuracy, which is demonstrated by

comparing predicted and measured near- fields for two distinct antennas, along

with a comparison against an exact

theoretical model. In the case of

circularly symmetric excitation models

for electrically large antenna

apertures, the predicted relative

near-zone power-density contour plots

turn out to be a function of only the

relative aperture distribution.

Nomographs for obtaining absolute

near-zone power densities are presented

for a few typical aperture-distribution

functions.

[Contact: (303) 497-5196]

Muth, L.A., Interelement Interactions

in Phased Arrays: Theory , Methods of

Data Analysis, and Theoretical Simulations, to be published as NBS Tech.

Note 1090.

We review theoretically the effects of

multiple reflections and mutual impedances in array environments, and study

possible methods of far-field pattern

data analysis to recover interaction

effects. We use theoretical expressions

derived earlier to calculate in a twoelement linear array the mutual imped- ance matrix.

[Contact: (301) 921-3603]

Recently Published

Jesch, R.L., Measured Vehicular Antenna Performance, IEEE Transactions

on Vehicular Technology, Vol. VT-34,

No. 2, pp. 97-1 07 (May 1985).

Power gain radiation patterns of mobile

antennas mounted in six different locations on a test vehicle were measured

with and without typical lights and

sirens mounted on the roof. The mea- surements were performed at frequencies

representing the frequency bands of 25

to 50, 150 to 174, 400 to 512, and 806

to 866 MHz . In addition, special antennas consisting of three disguised antennas operating at discrete frequencies of

40.27, 1 62.475, and 416.975 MHz and one slot antenna operating at 413 MHz were also measured. Plots of power gain

radiation patterns are given for the

mobile antennas mounted in six different

locations on the test vehicle and for

the special antennas. Results showing

the effects of poor grounding characteristics are also included. Recommended

locations for mounting the mobile antennas are given for specific frequency

bands

.

[Contact: (303) 497-3496]

Muth, L. , A Theory of Mutual Impedances and Multiple Reflections in an N-Element Array Environment, Proceedings of the 1985 International Symposium on Antennas and Propagation,

Kyoto, Japan, August 20-22, 1985, pp.

719-722, and Proceedings of 1985 International Symposium on Antennas and EM

Theory, Beijing, China, August 26-28,

1985, pp. 440-447 [these papers are shortened versions of NBS Tech. Note

1 078 published in February 1985],

A general theoretical approach is formulated to describe the complex electromagnetic environment of an N-element
Page 20 CEEE Technical Progress Bulletin - June 86

Antenna Metrology , cont'd.

array. The theory reveals the elementto-element interactions and multiple

reflections within the array. From the

formulation, it is found that the interaction between an excited element and an open-circuited element can be viewed as the sum of terms describing all possible

signal paths within the array environment which start from the radiating

element and terminate on the element

under observation. Within all paths

except the most direct one, multiple

reflections between subgroups of elements take place. The resulting solution is highly structured and recursive

and is discussed in detail in the text.

Illustrative examples are provided to

facilitate understanding of these

ideas.

[Contact: (303) 497-3603]

Newell, A.C., Francis, M.H. , Kremer,

D.P. , and Grimm, K.R., Results of

Planar Near Field Testing with Ultralow

Sidelobe Antennas, Symposium Digest

of the IEEE/AP-S International Symposium 1985, Antennas and Propagation,

Vancouver, B.C., June 17-21, 1985, pp.

693-698.

An investigation to demonstrate Planar

Near Field measurement accuracy for

ultralow sidelobe antennas is nearing

completion at the National Bureau of

Standards, Boulder, Colorado. The

existing NBS scanner has been modified

to accommodate antennas up to 10m long

and 4 m high. Two antennas will be

measured as part of this research

effort. They are the AW ACS (U.S.

Airborne Warning and Control System) and

the ULSA (Ultra Low Sidelobe Antenna)

travelling wave antennas which are,

respectively, 8 m x 1.5 m and 6 m x 1 m. Results of tests to introduce controlled

near-field measurement error confirm

predicted far-field sidelobe accuracies

at the ~60-dB level. Additional results

show the utility of a new two-element

probe to extend sidelobe measurement

accuracy by steering a probe pattern

null in the direction of the test

antenna' s mainbeam.

[Contact: (303) 497-3743]

Newell, A.C., and Repjar, A.G. , Development of Near-Field Test Procedures

for Communication Satellite Antennas,

Phase I , Part 1, NBSIR 85-3031

(September 1 985).

The purpose of this program is to define

and further develop the capabilities of

near-field antenna test techniques,

specifically for the requirements asso- ciated with the developnent and verification testing of reconfigurable, multibeam, frequency reuse, commercial satellite antennas. Phase I, Part 1 gives a general survey, definition, and description of near-field and compact range

measurement methods as they apply to

satellite antenna systems testing. Each

of these methods is evaluated to determine how well they meet the measurement

requirements. Included for each technique is a summary of the measurement

method, discussions on probe correction

and data processing, measurement hard- ware considerations, a resul ts-available

section, and measurement accuracy and

range certification considerations. The

basis for the choice of the best mea- surement technique is established with

the planar near-field measurement method

receiving the best score for the directive antennas considered. As a result,

further study will focus on this technique and will be reported on subsequently. A detailed presentation of

planar near-field measurements theory is

presented in Appendix A.

[Contact: (303) 497-3743]

Microwave Metrology

Released for Publication

Eigen, G. F., An Introduction to the

Six-Port Automatic Network Analyzer,

to be published in the Conference Digest, Test & Measurement World Expo,

San Jose, California, April 8-10,

1 986.

The "six-port" differs from other auto-
CEEE Technical Progress Bulletin - June 86 Page 21

Microwave Metrology , cont'd.

matic network analyzers in its use of

simple amplitude detectors as contrasted

with heterodyne methods. This paper

presents an elementary introduction to

the subject and outlines some of the

advantages and limitations of the

method.

[Contact: (303) 497-351 1]

Weidman, M., Finline Diode Six-Port

Fundamentals and Design Information,

to be published as NBS Tech. Note

1 090.

The preliminary design and testing of a planar circuit six-port with diode

detectors is described. The planar

circuit medium was chosen to be finline,

and all preliminary work was done in

WR-42 waveguide (18 to 26.5 GHz). The

finline substrate was alumina, and

initially commercial beam-lead diodes

were bonded to the finline

metallization. The goal is to design an integrated circuit which could be

fabricated on one chip (with diode

detectors) and used as part of a six-port network analyzer in the

waveguide bands above 18 GHz, Initial

designs proved to be unsatisfactory

because of high losses and reflections.

Most of the problems have been solved,

and a usable integrated finline circuit

is a good possibility for a millimeter

wave six-port.

[Contact: (303) 497-3210]

Recently Published

Wilson, P. F., and Chang, D.C., Mode

Coupling by a Longitudinal Slot for a Class of Planar Waveguiding Structures:

Part I - Theory, also Part II - Applications, IEEE Transactions on Microwave Theory and Techniques, Vol.

MTT-33, No. 10, pp. 981-993 (October

1 985) .

Coupling between two parallel-plate

waveguides is investigated. Mutual

excitation is due to a longitudinal slot

in a common plate. The introduction of

reflecting boundaries parallel to the

slot allows one to model a number of

planar waveguiding structures featuring

a common coupling mechanism. Part I of

this paper details the analysis of the

basic slot scattering problem based on

the singular integral equation method.

If one assumes that the slot is small,

then closed- form algebraic modal equations follow. These modal equations are well adapted to numerical parametric

studies.

Part II of this paper presents specific

examples of the above approach along

with numerical results. Examples include a rectangular coaxial transmission

line, broadwa 1 1-coupled rectangular

waveguides, coupled microstrips, and

coupled microstrip and rectangular waveguide.

[Contact: (303) 497-3842]

Laser Metrology

Released for Publication

Rasmussen, A.L. , and Franzen, D.L. , Low Level Germanium Detector Transfer

Standard at 1.064 y», to be published

as NBSIR 85-3041.

Two PIN germanium photodiodes have been

calibrated in the 1- to 250-fJ/cm 2 range

with 15 percent uncertainty for 10- to

1 00-ns durations, 1.064-ym laser pulses.

To do these calibrations, we used (1) a cw Nd : YAG laser beam acous to-optically

modulated and a PIN silicon photodiode

transfer standard to provide low-level

laser pulses of known energy and (2) a pulsed 1.06-ym LED beam. A 1 -cm2 collecting lens and a ground glass diffuser

were placed in front of each detector to

improve sensitivity and spatial uniformity, respectively. In the future, these

detectors may also be useful as transfer

standards at wavelengths out to 1.7 ym.

[Contact: (303) 497-5367 or -3616]

Recently Published

Johnson, E.G., Direct Measurement of

the Spatial Modes of a Laser Pulse —
Page 22 CEEE Technical Progress Bulletin - June 86

Laser Metrology , cont'd.

Theory, NBS Tech. Note 1084 (August

1 985) .

We consider realizing an electric-field

measuring apparatus to measure the

temporal and spatial modes of a laser

pulse by using optical processing,

tapered optical fibers, and a pair of

detectors at the end of each optical

fiber. Using an appropriate

computer-generated hologram (CGH), we show it is possible to discriminate

among a set of orthonormal modes used to

represent the spatial features of the

electric field with a signal- to-noise

ratio of at least 100 to 1. The tapered

fiber is a mode filter that is used in

the transform plane of the CGH. This

fiber allows the precise determination

of the strength of each of the

orthonormal modes being used as the

spatial basis of the electric field

before the optical processing.

[Contact: (303) 497-3234]

Rasmussen, A.L., and Sanders, A. A.,

Documentation of the NBS APD and PIN

Calibration Systems for Measuring Peak

Power and Energy of Low-Level 1 . 064 pm

Laser Pulses, NBSIR 85-3032 (December

1 985) .

National Bureau of Standards APD (Avalanche) and PIN silicon photodiode

transfer standards are documented for a calibration service to measure 1 . 064-pm

laser pulses from ~10“® to ~10-t+ W peak

power and ~10“^ to ~10-1 ^ J energy. A

modulated continuous -wave measurement

system generating known low-level pulse

is described. Calibration support

equipment, systematic and random errors,

and computer programs and calibration

data are also described.

[Contact: (303) 497-5367 or -3616]

Optical Fiber Metrology

Released for Publication

Day, G.W., McFadden, J.D.O. , Veeser,

L.R., Chandler, G. I . , and Cernosek,

R.W., Optical Fiber Sensors for the

Measurement of Pulsed Electric Currents, to be published in the Proceedings of the AGARD (NATO Advisory

Group for Aerospace Research and Development) Specialists Meeting on Optical

Guided Waves in the Military Environment, Istanbul, Turkey, September

23-27, 1985.

Recent progress in the design of fiber sensors for pulsed electric currents is

reviewed. Several of the most useful sensor configurations are described and

compared. Models are used to predict

the transfer function of these sensors,

their sensitivity to nonideal fiber

properties, particularly linear birefringence, and methods for overcoming

these problems. Other recent research

is examined to suggest the prospect for sensors with improved sensitivity and

stability.

[Contact: (303) 497-5204]

Franzen, D.L. , Standard Measurement

Procedures for Characterizing SingleMode Fiber, to be published in the

Conference Digest, Test & Measurement

World Expo, San Jose, California, April

8-10, 1986.

Parameters used to describe single-mode

fiber include attenuation, cut-off wavelength, mode-field diameter, and dispersion. Results for some measurements

depend on the condition of the test

fiber and the method used. This paper

describes the latest recommendations

from standards groups and gives typical

examples of achieved measurement precision.

[Contact: (303) 497-3346 or -5342]

Gallawa, R.L., and Shao, Y. , Optical

Power Meters: A Round Robin Test on Precision.

The proliferation of optical fiber systems has spawned the introduction of a variety of optical power meters. These

meters are crucial to the analysis and

maintenance of fiber commune iat ion systems. In this paper we give the results
CEEE Technical Progress Bulletin - June 86 Page 23

Optical Fiber Metrology , cont'd.

of an interlaboratory experiment to

determine the precision of the meters

being used in the fiber community. The

results indicate that the precision of

power meter readings in different laboratories is not good. The precision

improved when measurements taken with

very small-area detectors were excluded.

[Contact: (303) 497-3761]

Kanada, T. , and Franzen, D. , SingleMode Fiber Dispersion Measurements

Using Optical Sampling with a Modelocked Laser Diode.

Pulses from a wavelength-tunable, modelocked laser diode are measured after 21

km of single-mode fiber propagation by

optical sampling with another modelocked

laser diode; a resolution of 0.1

ps/nm»km is achieved in this chromatic

dispersion measurement. In another

related experiment, 78-ps duration

pulses from an ordinary, multilongitudinal mode laser diode are clearly displayed by optical sampling after 36 km

of fiber propagation. System bandwidth

increases to approximately 500 GHz «km as the laser diode wavelength is temperature tuned through the zero dispersion

region.

[Contact: Douglas L. Franzen (303)

497-3346 or -5342]

Other Fast Signal Topics

Released for Publication

Bell, B.A., and Perrey, A.G. , Evaluation of Electronic Monitoring Devices,

to be published as a National Institute of Justice Report.

Two electronic systems used for monitoring the location of persons sentenced to

home confinement were tested to determine their operating frequency, approximate range of operation, component com- patibility, tamper resistance, and other

characteristics such as safety. Tests

were conducted in an open field, in a

wooden residence, in a high-rise building, and in a laboratory environment.

[Contact: (301) 921-2727]

Hill, D.A., and Wait, J.R., Anomalous

Vertical Magnetic Field for Electromagnetic Induction in a Laterally Varying

Thin Conductive Sheet.

We employ a simple model to show how the

natural electromagnetic field on the

surface of the earth, which has a strong

horizontal magnetic field component, can

be converted to a significant vertical

magnetic field at the surface. Such a conversion mechanism will be caused by

lateral variations of the subsurface

conductivity structure. Our idealized

model is a thin conducting sheet with a periodic variation of the conductivitythickness product in one horizontal

direction only.

[Contact: (303) 497-3472]

Recently Published

Bensema, W.D., Personal RM Transceivers, NIJ Standard 0209.01, National Institute of Justice, Technology

Assessment Program (September 1985).

This document is an equipment standard

developed by the Law Enforcement Standards Laboratory of the National Bureau

of Standards and is produced as part of

the Technology Assessment Program of the

National Institute of Justice. The

standard specifies performance and other

requirements equipment should meet to

satisfy the needs of criminal justice

agencies for high-quality service.

Performance requirements and methods of

test are presented for nontrunked frequency modulated (FM) personal transceivers and their associated antennas

and power sources. The standard applies

to transceivers which either do not have

special subsystems such as selective

signaling or voice privacy, or in which

such subsystems are bypassed or disabled

during testing for compliance with the

s tandard.

[Contact: (303) 497-3465]
Page 24 CEEE Technical Progress Bulletin - June 86

Other Fast Signal Topics , cont'd.

Daywitt, W.C., Complex Permittivity of

Beryllium Oxide Between 100 and 300 K

at 9.3 GHz, IEEE Transactions on Instrumentation and Measurement, Vol.

IM-34, No. (1), pp. 98-99 (1985).

9.3 GHz measurement results of the

relative permittivity and loss tangent

of beryllium oxide at 99, 1 45, 223, and

300 K are reported.

[Contact: (303) 497-3720]

Hill, D.A., Radio Propagation in a Coal Seam and the Inverse Problem,

Proceedings of the 1985 International

Symposium on Antennas and EM Theory,

Beijing, China, August 26-28, 1985, pp.

422-427.

The longwall method of coal mining in

underground coal seams is very efficient

in uniform seams, but coal seam anoma- lies can make the method unprofitable

and unsafe. This paper describes the

theoretical basis for detection of coal

seam anomalies using medium frequency

radio transmission over paths on the

order of 200 meters in length. The key

to the method is the sensitivity of the

attenuation rate of the coal seam mode

of propagation to changes in the coal seam parameters, such as height or electrical conductivity. From a large

number of transmission paths, the principles of tomography can be used to

reconstruct an image of the seam. [Contact: (303) 497-3472]

Young, M., The Scratch Standard Is

Only a Cosmetic Standard, Laser

Focus/Electro-Optics, pp. 138-140

(November 1985). [An identical paper

appeared in the Proceedings of the

Conference on Laser Induced Damage in

Optical Materials, Boulder, Colorado,

October 28-30, 1985.]

A history of the scratch and dig

standard is presented, describing its

application and pointing out that it may

not be used for quantitative assessments

such as width measurement.

[Contact: (303) 497-3223 or -5342]

ELECTRICAL SYSTEMS

Power Systems Metrology

Released for Publication

Petersons, 0., and Mehta, S.P., Calibration of Test Systems for Measuring

Power Losses of Transformers, to be

published as NBS Technical Note 1204.

A calibration system for accuracy verification and alignment of test systems

for measuring transformer losses is

described. Methodologies are presented

for assessing measurement uncertainties

and for evaluating overall accuracy of

test systems. Procedures are suggested

for continuing maintenance and calibration of standard instruments and test

systems to ensure traceable measurements.

[Contact: (301) 921-2328]

Recently Published

Oldham, N.M., Power Calibration Standard Based on Digitally Synthesized

Sinewaves, IEEE Transactions on Power

Apparatus Systems, Vol. PAS-104, No.

11, pp. 3117-3121 (November 1985).

The unit of electric power at 60 Hz is

often derived using impedance bridge

techniques in which the alternating

voltage is referred to the direct voltage standard through a thermal converter. An alternative calibration technique is described in which the ac-to-dc

transfer is made through digital-toanalog converters (DACs) in the form of

a dual-channel digital sinewave generator. The power is calculated from mea- surements of voltage, current, and phase

angle, all of which rely on the accuracy

of the digital generator and ultimately

on the accuracy of the DACs. Measurement uncertainties of less than 100 ppn

have been achieved.

[Contact: (301) 921-2727]

Oldham, N. M.

,

and Petersons, 0.

,

Cali-
CEEE Technical Progress Bulletin - June 86 Page 25

Power Systems Metrology / cont'd.

bration of Standard Wattmeters Using a Capacitance Bridge and a Digital Generator, IEEE Transactions on Instrumentation and Measurement, Vol. IM-34,

No. 4, pp. 521-524 (December 1985).

A method for calibrating high-accuracy

wattmeters is described. The technique

is a modification of a previously described approach that utilizes a power

bridge based on a current comparator.

In such a bridge, the test current of

the wattmeter is balanced with a known

current that is proportional to the test

voltage. The measurement circuit described employs a high-voltage capacitance bridge in place of a special cur- rent comparator that was used in the

previous system. High sensitivity and

large ratios of the capacitance bridge

enable using high impedances, such as stable gas-dielectric capacitors and

resistors having low-power dissipation

for the generation of reference currents. The voltage on the standard

impedances is adjusted with inductive

dividers to obtain any power factor

between zero and one, lead and lag. A

digitially synthesized dual-channel

signal source serves as a stable source

of voltage and current, and thus of

"phantom" power.

[Contact: (301) 921-2727]

Pulse Power Metrology

Released for Publication

Hebner, R.E., High-Speed Data Systems

for Pulsed Power Applications, to be

published in the Proceedings of the 5th

IEEE Pulsed Power Conference, Arlington, Virginia, June 10-12, 1985.

Da ta-acquisition systems for pulsed

power applications generally must

provide nanosecond resolution, operate

in an environment of high levels of

electromagnetic interference, and

acquire significant amounts of data

simultaneously. To meet these demands,

electrical systems have been used and

optical systems are being introduced.

Voluntary standards have been and are being developed which categorize the

errors in the electrical measurement

systems. Optical systems are in too

early a state of development for similar

standardization.

[Contact: (301 ) 921-31 21]

Superconduc tors

Released for Publication

Dube, W.P., and Goodrich, L.F., A

Quench Detector Design for Superconductor Testing.

A quench detector is a device that interrupts the flow of current through a superconductor in the event the superconductor reverts to the normal, resistive state. Ibis new design has adjustable filtering and sensitivity. The

input is well isolated from the output,

eliminating any possible ground loop

through the detector. It also has ex- cellent noise immunity.

[Contact: Loren F. Goodrich (303)

497-3143]

Ekin, J. W., High-Field Flux Pinning

and the Strain Scaling Law, to be

published in the Proceedings of the

International Symposium on Flux Pinning

and Electromagnetic Properties in

Superconductors, Fukuoka, Japan, November 1 1-1 5, 1 985.

The effects of strain on flux pinning in

superconductors are discussed. Significant differences between the strain

scaling law, temperature scaling law,

and the flux-line-shearing model of

Kramer are demonstrated. The strain

scaling law is more general than current

flux-pinning models, and as such, it may

serve as a guide to future work on flux

pinning theory. Flux-pinning measurements at fields up to 24 T have been

made on a series of high-quality Nb ^Sn

samples with third (and fourth) element

additions. The data show that the usual

extrapolation procedures for determining

the bulk-average upper critical field in

Nb3Sn lead to significant errors when
Page 26 CEEE Technical Progress Bulletin - June 86

Superconductors , cont'd.

additives such as Ti , Ta, Ga, and Hf are present.

[Contact: (303) 497-5448]

Recently Published

Moreland, J. , and Ekin, J.W., Electron

Tunneling Experiments Using Nb-Sn

"Break" Junctions, Journal of Applied

Physics, Vol. 58, No. 10, pp. 3888-3895

(15 November 1985).

An Nb-Sn filament mounted on a flexible

glass beam can be broken to form an electron tunneling junction between the

fracture elements. Breaking the filament in liquid helium prevents oxidation

of the freshly exposed fracture sur- faces. A sharp superconducting energy

gap in the I-V characteristics measured

at 4 K indicates the formation of a high-quality tunneling barrier between

the fracture elements. The resistance

of the junction between the fracture

elements can be continuously adjusted by

varying the surface-bending strain of

the beam. An estimated 0.1 -nm change in

the barrier thickness produces about an order of magnitude change in the resistance over the range from 1

0

5 to 1 08

fi. The exponential character of this dependence shows that the tunnel junction is

freely adjustable without intimate con- tact of the junction elements. "Break"

junctions made in this way offer a new class of tunneling experiments on freshly exposed surfaces of a fractured sam- ple without the oxide barrier previously

required for junction stability. Such

experiments provide a simple technique

for tunneling to new materials and may

eliminate complications that can be

encountered during interpretation of

data obtained using oxide barriers.

[Contact: (303) 497-3641]

Moreland, J. , and Ekin, J.W., Electron

Tunneling into Superconducting Filaments Using Mechanically Adjustable

Barriers, Applied Physics Letters,

Vol. 47, No. 2, pp. 1 75-1 77 (1 5 July

1 985) .

A new type of squeezable electron tunneling (SET) junction has been developed

for tunneling into superconducting filaments. Stable, mechanically adjustable

tunneling barriers between the native

surfaces of sputtered Nb films and 30-ym

diameter Nb filaments were established

in liquid helium at 4 K. The currentversus-voltage characteristics of these

SET junctions were used to determine the

superconducting energy gap at the sur- face of the filaments. Since the filameters were etched from commercial su- perconducting magnet wire, this type of

tunnel junction shows promise as a diagnostic probe of superconducting materials for high-field magnets.

[Contact: (303) 497-3641]

Magnetic Materials and Measurements

Released for Publication

Capobianco, T.E., A Review of Eddy

Current Research at the National Bureau

of Standards in Boulder, Colorado, to

be published in the Proceedings of the

DoD Conference on Nondestructive Evaluation, Charleston, South Carolina,

October 29-31, 1 985.

On-going research in eddy current nondestructive evaluation at the National

Bureau of Standards in Boulder, Colorado, is reviewed. Hie most recent

results and publications of experimental

and theoretical studies are presented.

This includes the areas of eddy current

coil characterization and field mapping,

experimental verification of eddy

current-fatigue crack interaction, uniform field probe calibration, artifact

standards, fatigue crack growth monitoring, and differential eddy current probe

s tud i e s . [Contact: (303) 497-31 41]

ELECTROMAGNETIC INTERFEREHCK

Released for Publication

Adams, J.W., and Vanzura, E. , Shielding Effectiveness Measurements of Plastics, to be published as NBSIR H5-
CEEE Technical Progress Bulletin - June 86 Page 27

Electromagnetic Interference , cont'd.

3035.

Measurement of shielding effectiveness

of plastic materials with respect to

electromagnetic radiation poses serious

problems due to the insulating nature of

many plastics. A method of making these

measurements using a flanged coaxial

holder overcomes some of the difficulties.

[Contact: (303) 497-3328]

Crawford, M.L. , and Koepke, G.H., Design, Evaluation, and Use of a Reverberation Chamber for Performing Electromagnetic Susceptibility/Vulnerability Measurements, to be published as NBS Tech. Note 1 092.

This report presents the results of work

at the National Bureau of Standards,

Boulder, Colorado, to carefully evaluate, document, develop (when necessary)

,

and describe the methodology for performing radiated susceptibility/ vulnerability measurements using a reverberation chamber. The report describes the

reverberation chamber theory of operation, construction, evaluation, functional operation, and use for performing

immunity measurements. It includes an estimate of measurement uncertainties

derived empirically from test results

and from comparisons with anechoic chamber measurements. Finally, it discusses

the limitations and advantages of the

measurement technique to assist potential users in determining the applicability for this technique to their electromagnetic compatibility (EMC) measurement needs.

[Contact: (303) 497-5497]

Friday, D.S., Methodology for Statistical Control of the Anechoic Chamber

Field Generation System, to be published as NBSIR 85-3033.

The micrcwave anechoic chamber is an NBS

laboratory facility in which standard

plane-wave electromagnetic fields are generated. The chamber enables specialized measurements and electromagnetic

i nterference/e lectromagnetic compa tibility tests to be conducted on antennas

and other devices. This paper is con- cerned with methodology for assuring

that the standard field patterns generated in the chamber are repeatable.

Procedures are proposed for developing a data base from measurements obtained by

placing the system, which generates the

fields, in certain relevant reference

configurations. Methodology is presented for developing statistical con- trol charts to monitor both the location

and the scale parameters of these data

over time.

[Contact: (303) 497-5395]

Hill, D.A., An Error Bound for NearField Array Synthesis.

An expression for the upper bound of any

component of the electric or magnetic

field at any point in a region is derived in terms of a product of two sur- face field integrals. The result is

most helpful for bounding errors in

near-field array synthesis, but might

have other applications where upper

bounds on field magnitudes are desired.

[Contact: (303) 497-3472]

Hill, D.A., Out-of-Band Response of a Coax-to-Waveguide Adapter.

The input impedance and transmission

coefficients of a coax-to-waveguide

adapter are analyzed for out-of-band

frequencies. Numerical results are shown for an S-band adapter for frequencies from 2 to 1 0 GHz. The above-band

response is frequency sensitive because

of the presence of higher-order propagating modes in the waveguide.

[Contact: (303) 497-3472]

Hill, D.A., and Wait, J.R., Anomalous

Vertical Magnetic Field for Electromagnetic Induction in a Laterally Varying

Thin Conductive Sheet.

We employ a simple model to show how the

natural electromagnetic field on the

surface of the earth, which has a strong
Page 28 CEEE Technical Progress Bulletin - June 86

Electromagnetic Interference , cont'd.

horizontal magnetic field component, can

be converted to a significant vertical

magnetic field at the surface. Such a conversion mechanism will be caused by

lateral variations of the subsurface

conductivity structure. Our idealized

model is a thin conducting sheet with a periodic variation of the conductivitythickness product in one horizontal

direction only.

[Contact: (303) 497-3472]

Phelan, R.J. , Jr., Larson, D.R., and

Simpson, P.A., A Sensitive, High

Frequency, Electromagnetic Field Probe

Using a Semiconductor Laser in a Small

Loop Antenna, to be published in

Proc. SP IE - The International Society

for Optical Engineering, Vol. 559

[Conference, San Diego, California,

August 1 8-23, 1 985] .

Using a loop antenna in series with a semiconductor laser, an optically

coupled electromagnetic field probe has

demonstrated sensitivities better than

1 yV/m/Hz 1/2 . The probe outside dimensions are equal to 5.7 x 5.7 x 1.3 cm^.

It can be used to measure frequencies as high as 2 GHz. The dynamic range is

estimated to exceed 6 orders of magnitude for incident microwave powers.

[Contact: (303) 497-3696 or -5342]

Recently Published

Crawford, M.L. , and Koepke, G.H., Comparing EM Susceptibility Measurement

Results Between Reverberation and Anechoic Chambers, Proceedings of the

1 985 IEEE International Symposium on Electromagnetic Compatibility, Wakefield, Massachusetts, August 20-22,

1 985, pp. 152-160.

This paper compares measurement results

obtained using a (2.7 x 3.1 x 4.6)-m

reverberation chamber and a (4.9 x 6.7 x 8.5)-m anechoic chamber to determine the

electromagnetic susceptibility of equipment under test (EUT). The frequency

range is 200 MHZ to 18 GHz. The "correlation factor" between the two techniques appears to be directly proportional to the gain of the EUT. Four

sample EUTs included in this study were

a 1-cm dipole probe, a ridged horn antenna, a small rectangular TEM transmission cell with an aperture, and a modified 7.0 cm (2.75") diameter folded-fin

aircraft rocket.

[Contact: (303) 497-5497]

Cruz, J.E., Driver, L.D. , and Kanda, M.

,

Design of the National Bureau of

Standards Isotropic Magnetic Field

Meter (MFM-10) 300 kHz to 100 MHz,

NBS Tech. Note 1 085 (October 1985).

A broadband magnetic field meter has

been developed at the National Bureau of

Standards (NBS) for the frequency range

of 300 kHz to 1 00 MHz . The isotropic

antenna unit consists of three mutually

orthogonal loops, each 10 cm in diameter. The magnetic field probe described

in this paper has a measurement range of

0.1 to 30 A/m. The readout of the meter

is in terms of the Hermitian or "total"

magnitude of the magnetic field strength

which is equal to the root-sum-square

value of the three orthogonal magnetic

field components at the measurement

point. This magnetic field meter is

nearly isotropic over its dynamic

range.

The electronic circuitry of the meter

obtains the total magnitude of all field

polarizations for all cw signals in the

entire frequency band. The sensor is

isotropic and is well suited fcr measuring the near field of an emitter, including regions of multiple reflections

and standing waves. The meter can be

used to monitor either the plane wave fields in the far zone of a transmitter, or the complicated fields very close to

a radiofrequency leakage source. This

report describes the design, performance, and operating instructions for the

MFM-1 0.

[Contact: (303) 497-3763]

Fi tzGerrell, R.G. , Site Attenuation,

NBS Tech. Note 1089 (November 1985) (.1
CEEE Technical Progress Bulletin - June 86 Page 29

Electromagnetic Interference , cont'd.

shortened version of this paper appeared in the Proceedings of the IEEE

1 985 International Symposium on Electromagnetic Compatibility, Wakefield,

Massachusetts, August 20-22, 1 985].

Site attenuation is a measure of performance of an open test site at frequencies below about 1 GHz. These sites

typically consist of a large, obstruction-free ground plane and the hemisphere above it. Calculations of site

attenuation are presented which provide

a reference for measurements made on a 30-m by 60-m wire-mesh ground screen. Measured data are compared to the calculated results.

[Contact: (303) 497-3737]

Hill, D.A., and Koepke, G.H., An Array

of Dipoles for Plane Wave Synthesis,

Proceedings of the 1985 International

Symposium on Antennas and Propagation,

Kyoto, Japan, August 20-22, 1985, pp.

1 77-1 80.

Phased arrays can be used to produce a nearly uniform plane wave in the near

field. This paper describes a small

array of dipoles which we have studied

theoretically and experimentally. The

element excitations are determined from

a near-field synthesis technique that

optimizes the field uniformity throughout the test volume.

[Contact: (303) 497-3472]

Jesch, R.L. , Measured Vehicular Antenna Performance, IEEE Transactions

on Vehicular Technology, Vol. VT-34,

No. 2, pp. 97-107 (May 1985).

Power gain radiation patterns of mobile

antennas mounted in six different locations on a test vehicle were measured

with and without typical lights and

sirens mounted on the roof. The mea- surements were performed at frequencies

representing the frequency bands of 25

to 50, 150 to 1 74, 400 to 512, and 806

to 866 MHz. In addition, special antennas consisting of three disguised antennas operating at discrete frequencies of

40.27, 1 62.475, and 416.975 MHz and one slot antenna operating at 41 3 MHz were

also measured. Plots of power gain

radiation patterns are given for the

mobile antennas mounted in six different

locations on the test vehicle and for

the special antennas. Results showing

the effects of poor grounding characteristics are also included. Recommended

locations for mounting the mobile antennas are given for specific frequency

bands.

[Contact: (303) 497-3496]

Kanda, M. , A Methodology for Evaluating Microwave Anechoic Chamber Measurements, Proceedings of the 6th Symposium and Technical Exhibition on Electromagnetic Compatibility, Zurich,

Switzerland, March 5-7, 1985, pp.

69-74.

This paper discusses a methodology for

evaluating anechoic chamber measurements. Anechoic chamber measurement is

evaluated in terms of the net power

delivered to a transmitting antenna, the

near-zone gains of open-ended rectangular waveguides and rectangular pyramidal

horns, and reflections from chamber

walls. The on-axis field intensity of

the standard transmitting horn in an anechoic chamber is calculated in terms

of the net power delivered to the transmitting antenna. The resulting data can

be used for estimating the overall un- certainty in the anechoic chamber mea- surements. Statistical control of the

measurement process by use of transfer

standard antennas will monitor the mea- surement uncertainties.

[Contact: (303) 497-5320]

Randa, J. , and Kanda, M. , Directional

Scanning of Complex Electromagnetic

Environments, Proceedings of the 1985

International Symposium on Antennas and

Propagation, Kyoto, Japan, August

20-22, 1 985, pp. 899-902.

As radiofrequency and microwave sources

(both intentional and inadvertent) multiply, the electromagnetic (EM) environ-
Page 30 CEEE Technical Progress Bulletin - June 86

Electromagnetic Inter ference , cont'd.

ment in which electronic devices (and

people) must function becomes increasingly complicated, while at the same time its characterization becomes more

important. In order to completely characterize an EM environment without

knowledge of the radiating sources, the

sampling theorem requires that systematic measurements of the amplitude and

phase of the field be made throughout

the volume at spacings of no more than

one-half wavelength (of the highest

frequency present) . This is often

impossible and seldom convenient. There

is a need for practical techniques which

would determine useful properties of an EM environment from relatively few mea- surements. One recent suggestion for

such a technique is to use directional

measurements at a single point in con- junction with a plane-wave expansion of

the field. This paper reports the formulation of the technique and the

results of a simulation using it.

[Contact: (303) 497-31 50]

Randa, J. , and Kanda, M., A Directional Scanning Technique for Characterization of Complex Electromagnetic Environments, Symposium Digest of the

IEEE/AP-S International Symposiun 1985,

Antennas and Propagation, Vancouver,

B.C., June 17-21, 1985, pp. 521-524.

The problem of characterizing complicated electromagnetic (EM) environments

without actually measuring the field(s)

throughout the entire volume of interest

is of great practical importance in the

areas of EM interference, EM compatibility, EM hazard assessment, etc. The

question is how to obtain useful information about the volume of interest from

a reasonably small number of measurements.

A recent suggestion which appears to

hold considerable promise is to use a directional probe to measure at one point the field incident from different

directions and then to reconstruct or bound the field throughout the volume by

using these measurements in conjunction

with a plane-wave expansion of the

field. The formulation has now been

completed and simulations performed for

the (vector) electric field, and the

results are reported in this paper.

Simulation results are encouraging.

[Contact: (303) 497-3150]

Randa, J. , and Kanda, M., A FiniteElement: Action Approach to the Characterization of Complex Electromagnetic

Environments, Proceedings of 1985

International Symposium on Antennas and

EM Theory, Beijing, China, August

26-28, 1985, pp. 48-53.

An approach is outlined to the characterization of complicated electromagnetic environments based on a finiteelement approximation to the action

functional of the electromagnetic field.

A stationary point of the action is

found by a numerical search, subject to

constraints imposed by boundary conditions and by measurements of the field

at some number of points. The technique

is illustrated by a simple example.

[Contact: (303) 497-3150]

Randa, J. , and Kanda, M. , High-Frequency Errors of an Electric-Field

Meter in Complicated Environments,

Proceedings of the 1985 IEEE International Symposiun on Electromagnetic

Compatibility, Wakefield, Massachusetts, August 20-22, 1985, pp. 618-

621 [related paper, Multiple-Source,

Multiple-Frequency Error of an Electric

Field Meter," appeared in IEEE Transactions on Antennas and Propagation,

Vol. AP-33, No. 1, pp. 2-9 (January

1 985) ] .

The results of a study of electricfield-meter ( EFM) errors in complex

electromagnetic environments are

reported. Two types of errors are con- sidered — errors in the measured electric field for a common EFM design, and errors in the assumption of equal electric and magnetic energy densities in a multiple-plane-wave environment. Typical errors in both cases are approxi-
CEEE Technical Progress Bulletin - June 86 Page 31

Electromagnetic Interference , cont'd.

mately one-half to three dB, but in some circumstances, they can exceed ten dB.

[Contact: (303) 497-3150]

Wilson, P. F., and Ma, M.T. , Factors

Influencing Material Shielding Effectiveness Measurements, Proceedings of

the IEEE 1985 International Symposium

on Electromagnetic Compatibility, Wakefield, Massachusetts, August 20-22,

1985, pp. 29-31 [related paper,

"Shielding Effectiveness: Measurement

Techniques and Interpretations , " to

be presented at 1986 Regional EMC

Conference, Anaheim, California, February 6, 1986, and to be published in

that conference's proceedings].

A material' s shielding effectiveness is

often measured in terms of insertion

loss, the field reduction between a transmitter and receiver achieved by

introducing the shield material. The

insertion loss concept is simply stated;

however, ambiguities arise when one attempts to interpret specific insertion

loss measurements. Insertion loss data

depend not only on the shield material

tested, but also on the measurement

procedure. The antenna types used and

their positioning, the incident waveform

and its wave impedance, and the contact

resistance between the test material and

its mount (if any) can all affect insertion loss measurements, sometimes

dramatically. These concepts are discussed based on the simple model of

coupling through an electrically small

aperture, loaded and unloaded, with the

shield material. Emphasis is on the

importance of understanding and recognizing these factors when obtaining or interpreting shielding effectiveness

results.

[Contact: (303) 497-3842]

1 986 CEEE Calendar

June 23-27 (Gaithersburg, MD

)

1 986 CPEM ( Conference on Precision Electromagnetic Measurements) . CPEM 86 is

being sponsored by the U.S. National

Bureau of Standards, the IEEE Instrumentation and Measurement Society, and the

Union Radio Scientifique Internationale.

The Conference will present papers cov- ering the theory, design, performance,

simulation, and application of electromagnetic standards, measurements, techniques, instruments, and systems. Sessions are tentatively planned to cover

the following technical areas: electromagnetic-related fundamental constants

and standards; direct current, low frequency, and radiofrequency; time, time

interval, and frequency; antennas and

fields; micrcwaves and millimeter waves;

infrared, visible, and ultraviolet radiation; lasers; electro-optics and fiber

optics; cryoelectronics; automated mea- surements; and technical calibration

services. The Conference language will

be English. [Contact: Sara Torrence,

(301) 921-2721. (For technical information, contact John R. Sorrells, (301)

921-2727 or Norman B. Belecki, (301)

921-271 5. )

]

September 9-10 (Boulder, CO)

Symposium on Optical Fiber Measurements.

This fourth biennial Symposium is devoted to measurements on optical fiber,

related components, and systems. It is

sponsored by NBS in cooperation with the

IEEE Optical Communications Committee

and the Optical Society of America and

is intended to provide a forum for re- porting the results of recent measurements research and for evaluating these

results in terms of future directions.

About one-quarter of the sessions will

be workshops led by invited panelists.

Summaries of presented papers will be

published in a technical digest to be

distributed at the Symposium.

[Contact: Susie A. Rivera, (303) 497-

5342]

RECENTLY ISSUED

STANDARD REFERENCE MATERIALS

The first practical superconducting

standard reference material (SRM) has

been released by the Electromagnetic
Page 32 CEEE Technical Progress Bulletin - June 86

Recently Issued SRMs , cont'd.

Technology Division to the NBS Office of

Standard Reference Materials for sale to

the public. The certified parameter of

SRM 1457, Superconducting Critical Current — NbTi Wire, is critical current

at magnetic fields of 2, 4, 6, and 8

tesla at a temperature of 4.2 K and an electric field criterion of 0.2 yV/cm.

Information is given to permit the user

to determine critical current for temperatures in the range 3.90 to 4.24 K

and electric field criteria from 0.05 to

0.2 yV/cm.

SRM 1457 consists of a 2.2-m length of a multi f i lime ntary , niobium-titanium,

copper-stabilized wire, wound in a single layer on a spool having a core diameter of 8.7 cm. The wire is evaluated

for 34 parameters relating to current,

voltage, magnetic field, temperature,

strain, and physical specimen characteristics .

In conjunction with ASTM Standard Test

Method B714-82, D-C Critical Current of

Composite Superconductors, the new SRM

is intended to provide means for calibrating apparatus used to measure key

parameters of superconductor products

and thus should be useful to buyers and

sellers of superconductors, users of

superconducting equipment, and re- searchers in superconducting technology.

CEEE SPONSORS

National Bureau of Standards

Department of Defense

Defense Advanced Research Project

Agency; Combined Army/Navy/Ai r Force

Calibration Coordination Group;

Defense Nuclear Agency

U.S. Air Force

Bolling Air Force Base; Hanscom Air

Force Base; Newark Air Force

Station; Rome Air Development

Center; Space Division;

Wr igh t-Patterson Air Force Base

U.S. Army

Aberdeen Proving Ground; Aviation

Research and Development Command;

Fort Monmouth; Harry Diamond

Laboratories; Fort Belvoir;

Redstone Arsenal

U.S. Navy

Aviation Logistics Center (Patuxent

River); Naval Air Systems Command;

Naval Surface Weapons Center; Naval

Weapons Support Center (Crane);

Office of Naval Research

Department of Energy

Energy Systems Research; Fusion

Energy

Department of Justice

Law Enforcement Assistance

Administration

Charles Stark Draper Laboratory

Food and Drug Administration

Hughes Aircraft Company

International Copper Research

Association

International Telecommunications

Satellite Organization

Sandia National Laboratories

University of California Los Alamos

Scientific Laboratory
NBS-114A irev. 2-sci U.S. DEFT. OF COMM. BIBLIOGRAPHIC DATA

SHEET (See instructions)

1. PUBLICATION OR

REPORT NO. NBSIR-86/3 344-2

2. Performing Organ. Report No,

4. TITLE AND SUBTITLE

Publication Date June 1986

Center for Electronics and Electrical Engineering Technical Progress Bulletin

Covering Center Programs, October to December 1985 with 1986 CEEE Events Calendar

5. AUTHOR(S)

E. Jane Walters, compiler

6. PERFORMING ORGANIZATION (If joint or other than NBS, see instructions) 7. Contract/Grant No. national bureau of standards

DEPARTMENT OF COMMERCE 8. Type of Report & Period Covered

WASHINGTON, D.C. 20234

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City, State, ZIP)

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

10. SUPPLEMENTARY NOTES

All technical information included in this document has been previously approved

for publication.

2] Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bibliography or literature survey, mention it here)

This is the thirteenth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. This issue of the CEEE Technical Progress Bulletin covers

the fourth quarter of calendar year 1985. Abstracts are provided by technical area

for both published papers and papers approved by NBS for publication.

12. KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolon s) antennas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers; semicondue tors; superconductors

13. AVAILABILITY

[X3 Uni i mi ted

14. NO. OF

PRINTED PAGES

1 | For Official Distribution. Do Not Release to NTIS

Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C. 20402.

37

15. Price

(33 Order From National Technical Information Service (NTIS), Springfield, VA. 22161 $9.95

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NATIONAL BUREAU OF STANDARDS

GAITHERSBURG. MD 20699

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CENTER FOR

ELECTRONICS AND ELECTRICAL ENGINEERING

H

Applied Electrical Measurement*

Electronic

Instrumentation

and Metrology

H

Microwave

I

ELECTROMAGNETIC

FIELDS

DIVISION

H

H

H

Metrology

Broadband

Microwave

Metrology

Fields

Characterization

Interference

Characterization

Antenna

Metrology

ELECTROMAGNETIC

TECHNOLOGY

DIVISION

H

Optical Electronic

IMetrology

H

Cryoelectronlc

Metrology

Superconductor

and Magnetic

Measurements

SEMICONDUCTOR

ELECTRONICS

DIVISION

H

Materials Characterization Process Metrology

Device Technology

H

Integrated Circuit

'Technology

KEY CONTACTS:

Center Headquarters (720)

Depu

Electrosystems Division (722)

Electromagnetic Fields Division (723)

Electromagnetic Technology Division (724)

Semiconductor Electronics Division (727)

Director, Mr. Judson C. French (301) 921-3357

y Director, Mr. Robert I. Scace (301) 921-3357

Chief, Dr. Oskars Petersons (301) 921-2328

Chief, Mr. Charles K.S. Miller (303) 497-3131

Chief, Dr. Robert A. Kamper (303) 497-3535

Chief, Dr. Kenneth F. Galloway (301) 92 1-354 1

INFORMATION:

For additional Information on the Center for Electronics and Electrical Engineering, write or call:

Center for Electronics and Electrical Engineering

National Bureau of Standards

Metrology Building, Room B-358

Gaithersburg, MD 20899

Telephone (301) 921-3357