A111D3 Dfi71Sfi

B.\.C.

.^ar.-t^ SPECIAL PUBLICATION 400-22

U.S. DEPARTMENT OF COMMERCE / National Bureau of Standards

Microelectronic Test Pattern

NBS-3for Evaluating the

Resistivity-Dopant Density

Relationship of Silicon

10-22
NATIONAL BUREAU OF STANDARDS

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UBRARY

JUL 7 797B

I'-Jr (XCC

QClOo

Semiconductor Measurement Technology: '^-^^^o^

Microelectronic Test Pattern NBS-3 for Evaluating the

Resistivity-Dopant Density Relationship of Silicon

Martin G. Buehler

Electronic Technology Division

Institute for Applied Technology

National Bureau of Standards

Washington, D.C. 20234

Jointly Supported by:

The National Bureau of Standards,

The Defense Nuclear Agency,

The Defense Advanced Research Projects Agency, and

The Navy Strategic Systems Project Office

U.S. DEPARTMENT OF COMMERCE, Elliot L. Richardson, Secretary

Dr. Betsy Ancker-Johnson, Asshiani Secretary for Science and Tec/ino/ogy

0(S NATIONAL BUREAU OF STANDARDS, Ernest Ambler, Aciing Director

Issued June 1976
Library of Congress Catalog Card Number: 76-600032

National Bureau of Standards Special Publication 400-22

Nat. Bur. Stand. (U.S.), Spec. Publ. 400-22, 57 pages (June 1976) CODEN: XNBSAV

U.S. GOVERNMENT PRINTING OFFICE

WASHINGTON: 1976

For sale by the Superintendent of Documents, U.S. Government Printing Office, Washington, D.C. 20402 (Order by SD Catalog No. C13.10:400-22). Price $1.45 (Add 25 percent additional for other than U.S. mailing).
CONTENTS

PAGE

Introduction 1

Design 3 Test Structures 6 Resistors 7

4.1. Base Sheet Resistor (VDP) , Structure 3.22 7

4.2. Base Sheet Resistor (B) , Structure 3.28 8

4.3. Base Sheet Resistor (VDP, FP , CS) , Structure 3.11 9

4.4. Incremental Base Sheet Resistor (VDP), Structure 3.30 .. . 10

4.5. Emitter Sheet Resistor (VDP), Structure 3.21 11

4.6. Emitter Sheet Resistor (B) , Structure 3.27 11

4.7. Metal Sheet Resistor (VDP), Structure 3.20 12

4.8. Metal-to-Base Contact Resistor, Structure 3.24 13

4.9. Metal-to-Emitter Contact Resistor, Structure 3.23 14

4.10. Metal Step-Coverage Resistor, Structure 3.33 14

4.11. Collector Resistor (FP, CS) , Structure 3.1 15

4.12. Collector Spreading Resistor (Small), Structure 3.12 ... 16

4.13. Collector Spreading Resistor (Large), Structure 3.18 ... 17

4.14. Collector Resistor (DGR) , Structure 3.7 18

4.15. Collector Four-Probe Resistor, Structure 3.17 19

4.16. Collector Hall Effect Resistor, Structure 3.26 20

MOS Capacitors 21

5.1. MOS Capacitor Over Collector (FP, CS) , Structure 3.8 ... 21

5.2. MOS Capacitor Over Collector, Structure 3.19 22

5.3. MOS Capacitor Over Collector, Structure 3.25 22

5.4. MOS Capacitor Over Base, Structure 3.2 23

5.5. MOS Capacitor Over Emitter, Structure 3.3 24

Diodes 25

6.1. Base-Collector Diode (FP, CS) , Structure 3.10 25

6.2. Base-Collector Diode (FP, CS) , Structure 3.14 26

6.3. Emitter-Base Diode (FP) , Structure 3.9 27

ill
PAGE

7. Transistors 28

7.1. Bipolar Transistor, Structure 3.13 28

7.2. Tetrode Transistor, Structure 3.6 28

7.3. MOS Transistor, Structure 3.16 30

7.4. MOS Transistor (Circular), Structure 3.15 31

8. Miscellaneous 32

8.1. Surface Prof ilometer Structure, Structure 3.29 32

8.2. Etch-Control Structures 3.31 B, E, C, M 33

8.3. Resolution Structures, Structure 3.32 B, G, M . • 34

8.4. Alignment Markers, Structures 3.4 N, P 34

8.5. NHS Logo, Structure 3.5 34

9. An n-p-n Transistor Fabrication Process 35

10. Test Pattern NBS-3 Measured Values 36

11. Discussion 39

Acknowledgements 39

Appendix 40

References 48

FIGURE CAPTIONS

Figure 1. Test pattern NBS-3 fabricated with the BASE (B) , EMITTER

(E) , CONTACT (C) , and METAL (M) masks. The length of the

pattern along one side is 200 mil (5.08 mm) 5 Figure 2. An illustration of the notation used in the cross sec- tional view of a test structure. The distance between

grid lines is 0.50 mil (12.7 ym) . In the top view B = base, E = emitter, and C = collector 6 Figure 3. Cross sectional view of a diffused region showing various

dimensions 8 Figure 4. Photomicrograph of the metal-to-base contact resistor,

structure 3.24 13

Figure 5. Etch-control structure where the regions within the squares were etched out so as to increase the size of the squares

to the dotted lines 33

Figure 6. The surface contour of the surface prof ilometer structure

3.29. The vertical scale factor is 50.0 nm/division and

the horizontal scale factor is approximately 10 ym/division. The A through G substructures are described in !i section 8.1 ... 38

iv

I
PAGE

Figure 7. Test pattern NBS-3 quadrant 1 41

Figure 8. Test pattern NBS-3 quadrant 2 43

Figure 9. Test pattern NBS-3 quadrant 3 45

Figure 10. Test pattern NBS-3 quadrant 4 47

LIST OF TABLES

Table 1. Planar Test Structures on Test Pattern NBS-3 4 Table 2. An n-p-n Transistor Wafer Fabrication Process 35

Table 3. Measurements on Test Pattern NBS-3 37

Table 4. Test Structures Shown in Figure 7 40

Table 5. Test Structures Shown in Figure 8 42

Table 6, Test Structures Shown in Figure 9 44

Table 7. Test Structures Shown in Figure 10 46
PREFACE

The work was conducted as part of the Semiconductor Technology Program at

the National Bureau of Standards. Portions of this work were supported by

the Defense Nuclear Agency (lACRO 75-816), Defense Advanced Research Projects

Agency (Order No. 2397), U.S. Navy Strategic Systems Project Office (IPR

SP-75-4) , and the NBS

In the semiconductor industry it is common practice to design photomasks

in English units. The photomasks used in this study were laid out in English

units. The equivalent metric unit is given in parentheses; in some cases the

equivalent is rounded off to an appropriate number of significant figures.

vi
MICROELECTRONIC TEST PATTERN NBS-3 FOR EVALUATING THE RESISTIVITY-DOPANT

DENSITY RELATIONSHIP OF SILICON

by

Martin G. Buehler

Abstract : Test pattern NBS-3 is a microelectronic

test vehicle designed by the National Bureau of Standards

to evaluate the electronic materials used in discrete

semiconductor devices and integrated circuits. Designed

for fabrication on silicon wafers, the test pattern is an aid in better understanding integrated circuit fabrication technologies. The main pattern consists of four

masks designated BASE, EMITTER, CONTACT, and METAL and

contains 33 test structures such as sheet resistors, MOS

capacitors, p-n junctions, bipolar and MOS transistors,

and etch control and resolution structures.

The pattern was designed primarily to aid in the evaluation

of the relationship between resistivity and dopant density

in both n- and p-type silicon. This relation is needed

in th'e design of silicon solid-state devices and in the

analysis of various physical measurements. Other test

structures are included for use as diagnostic tools to

verify that proper fabrication procedures were followed.

The remaining structures allow the exploration of new designs and measurement methods.

The structures are arranged in a square pattern 200 mil

(5.08 mm) on a side. A detailed layout of each test

structure is presented including both a top view and a cross sectional view. A description of each structure

is given and where applicable the formulas for evaluating

such quantities as resistivity, dopant density, and sheet

resistance are given. The fabrication of the test pattern

is illustrated by an n-p-n transistor process and values

obtained from various test structures are presented.

Key Words: Dopant density; microelectronics; MOS

capacitors; n-p-n transistor fabrication; p-n junctions;

resistivity; semiconductor electronics; sheet resistors;

silicon; test pattern; test structures.

This test pattern follows in a series of microelectronic test patterns

j intended for use in the design, process control, and product assurance of

I discrete devices and integrated circuits. The use of these patterns by

j manufacturers is expected to lead to lower cost and more reliable electronic

I components. When fully developed, they are intended to be utilized by the

buyers of microelectronic components in purchase specifications. The prej vious pattern, NBS-2 [1] , was designed so that we could fabricate various

I test structures needed for the development of various measurement methods.

Test pattern NBS-3 was designed primarily to evaluate the resistivity versus dopant density relation in n- and p-type silicon. Other secondary purposes

include the evaluation of test structures for use as process control tools

and the development of new and improved test structures. The purpose of this

report is to describe the test structures found on test pattern NBS-3, to

indicate the test methods associated with the dopant density and resistivity

1. INTRODUCTION

1
measurements, and to present selected test structure results from a wafer 'jiiiois fabricated with an n-p-n transistor process. ^^^sl

The resistivity-dopant density relation for silicon is commonly taken from i;;"' the experimental data of Irvin [2] . Caughey and Thomas [3] have written

closed-form mathematical formulas which fit the Irvin data for both n- and

p-type silicon. Recently, Wagner [4] has indicated that the p-type relation

is in error by about 50 percent for dopant density near 10^^ cm~^, NBS has

undertaken to reevaluate the resistivity-dopant density relation at the re- quest of and in conjunction with ASTM Committee F-1 on Electronics. The main

test vehicles are silicon wafers on which test pattern NBS-3 is fabricated.

Preliminary results of our investigation are presented elsewhere [5] .

The test structures found on test pattern NBS-3 are listed in table 1. The

overall pattern, shown in figure 1, is fabricated on a square silicon chip ::M 200 mil (5.08 mm) on a side where four mask levels were used. Enlarged views iiiitj of the test pattern are shown in the Appendix. Four different masks were designed and are intended to be used in the following sequence: BASE, EMITTER, istk! CONTACT, and METAL. Provision was made in the design to allov/ for the incor- •'ail' poration of a fifth PASSIVATION mask. The BASE mask delineates regions whose jtse' conductivity type is opposite from the collector substrate, and the EMITTER

mask delineates regions whose conductivity type is the same as the collector tjof substrate. ^sji A BASE (modified) mask was designed to address a special problem with

structures 3.12, 3.17, and 3.18. These structures have small collector ^ contacts which are formed by blocking the large-area base diffusion at the

contact points. This allows the formation of a collector pipe which reaches jijs; through to the top silicon surface. In order to block the base diffusion at jijsi a contact point, a base-oxide island is formed which is a square 0.25 mil

(6.4 ym) on a side. During fabrication, the base-oxide island is over-etched i,

|

byO.lOmil (2.5 ym) which reduces the oxide island to a square 0.15 mil Ij (3.8 ym) on a side. This means that the base lateral diffusion must be less j)j than 1.9 ym to prevent the closing off of the collector pipe. To reduce this ij problem, a BASE (modified) mask was designed where the 41 square base-oxide |j

islands, found on structures 3.12, 3.17, and 3.18, were increased to 0.50 mil ; (12.7 ym) on a side. When the BASE (modified) mask is used, the lateral !, I diffusion can be as large as 5.1 ym assuming that the base-oxide is over- i,

| etched by 0.10 mil (2.5 ym) . 1,1 The chip is composed of an array of 33 test structures such as sheet resistors, j, MOS capacitors, p-n junctions, bipolar and MOS transistors, and etch control and | resolution structures which for the most part are adaptations of commonly used ""i configurations. It should be noted that the collector Hall effect resistor

(3.26) is functional only after it has been scribed from the wafer and the

backside metal removed. To accommodate this structure, the scribe grid was \\ omitted from the BASE and EMITTER masks and included on only the CONTACT mask.

Structures specifically designed for the resistivity-dopant density evaluation are indicated by asterisks in table 1. Bulk collector dopant density values can be determined from the following structures: MOS capacitor over collector

(3.8), base-collector diode (3.10), and collector Hall effect resistor (3.26).

In obtaining dopant density values from the MOS capacitor over collector, the

high frequency C-V deep depletion method [6] provides true bulk values. The

high frequency C-V Cmax-Cmin method [7] can give erroneous values since this

method is influenced by the redistribution of impurities at the oxide-silicon

interface during the oxidation process [7] . Values obtained from the collec- ) tor Hall effect resistor (3.26) rely on a knowledge of the scattering factor

[8], [9] which is not well established in p-type silicon [8]. Dopant density

values can be obtained from the base-collector diode (3.10) by using the junction C-V method [10]

Bulk resistivity values can be found from the collector resistors (3.1, 3.7,

3.12, 3.17, and 3.18) and the collector Hall effect resistor (3.26). Collector

2
resistors (3.1, 3.7, 3.12, and 3.18) are intended to '.j.'.-a!.- with ' ' <-nt passing from the top of the chip to the backside contact. In thi

backside contact resistance and geometrical factors must b^- • Collector resistors 3.12 and 3.18 yield information about • con-*

tact resistance, and collector resistor (3.7) was designed to have a ccadlly

calculable geometrical factor. The collector four-probe resistor '

"! . ! 7 ) it

a conceptually simple structure, but it requires the fabrication

transistor. This device is easy to measure and provides unamblgu

resistivity values which do not depend on a knowledge of the backsi : resistance. The collector Hall effect resistor (3.26) can yi'-^ ' • ...... resistivity values but, as noted above, it requires that wafer .bed

into chips and the removal of the backside metallization.

Resistivity and dopant density values can be obtained continuously fror

profiles by combining the results of two test structures. The base do:

density profiles can be obtained from the emitter-base diode (3.9) witr.

of the junction C-V, method and the base resistivity profile can be obt . from the tetrode transistor (3.6). With the use of methods described elsewhere [11], these two structures allow resistivity values to be determined

over several decades in dopant density.

Many of the remaining test structures are in support of the above structures,

They are intended to assure that proper fabrication steps were followed and

to aid in diagnosing problems.

2. DESIGN

In designing the test structures for test pattern NBS-3 the following design

rules were observed:

1. Minimum stripe width: 0.25 mil (6.4 pm)

2. Minimum base to channel stop separation: 0.50 mil (12.7 um)

3. Minimum emitter to base separation: 0.50 mil (12.7 um)

4. Minimum contact to base (or emitter) separation: 0.50 mil (12.7 pm)

5. Metal overlap at contacts: 0.25 mil (6.4 ym) (0.50 mil (12.7 um) where

a passivation layer is opened]

6. Minimum field plate overlap at diffusions: 0.50 mil (12.7 um)

7. Minimum metal separation: 0.50 mil (12.7 ym)

8. Exposed bonding pad width when a passivation layer is used: 4.00 roil

(101. 6 ym)

9. Minimum passivation overlap at metal: 0.25 mil (6.4 um)

10. Scribe grid width: 4.00 mil (101.6 ym)

11. Expanded metallization contacts: avoided where possible by extending

diffusions under contacts.

12. Top side contacts: provided whenever possible.

13. The lines on each mask level: uniquely located so that they do not

coincide with the lines on another mask level.

These rules were chosen to minimize problems encountered in pinhole shorting,

mask aligning, probing, bonding, and inspecting. For instance, a misalignment of + 0.25 mil (6.4 ym) between the CONTACT and METAL masks and between

the CONTACT and BASE masks is tolerable. Eliminating expanded metal contacts

reduces pinhole shorting problems associated with contacts. Unique location

of lines on each mask level simplifies inspection procedures. These desxgn

rules eliminate certain fabrication faults and thereby improve the chances

that a test structure will function properly.

3
Table 1 - Planar Test Structures on Test Pattern NBS-3

Page Section Structure Test

g

IN UIMUtr 1 MlINUIIlUc; imKo 1 Ml jmhp Y* ^ 1" y^i IP 1" 1 1 v"P

15 4.11 3. 1 *Collector resistor (FP, CS)

23 5.4 3 2 MOS capacitor over base

24 5.5 3 3 MOS capacitor over emitter

34 8.4 3 4 N, P Alignment markers

34 8.5 3 5 NBS logo

28 7.2 3 6 *Tetrode transistor

18 4.14 3 7 *Collector resistor (DGR)

21 5.1 3 8 *M0S capacitor over collector (FP, CS) 27 6.3 3 9 *Emitter-base diode (FP)

25 6.1 3 10 *Base-conector diode (FP, CS)

9 4.3 3. n Base sheet resistor (VDP, FP, CS)

16 4.12 3 12 *Col lector spreading resistor (small)

28 7.1 3. 13 Bipolar transistor

26 6.2 3 14 Base-collector diode (FP, CS)

31 7.4 3 15 MOS transistor (circular)

30 7.3 3 16 MOS transistor

19 4.15 3 17 *Col lector four-probe resistor

17 4.13 3 18 *Col lector spreading resistor (large)

22 5.2 3 19 MOS capacitor over collector

12 4.7 3 20 Metal sheet resistor (VDP)

11 4.5 3. 21 Emitter sheet resistor (VDP)

7 4.1 3 22 Base sheet resistor (VDP)

14 4.9 3 23 Metal-to-emitter contact resistor

13 4.8 3 24 Metal-to-base contact resistor

22 5.3 3 25 MOS capacitor over collector

20 4.16 3. 26 *Col lector Hall effect resistor

11 4.6 3. 27 Emitter sheet resistor (B)

8 4.2 3. 28 Base sheet resistor (B)

32 8.1 3 29 Surface profile structure

ID A A 4.4 3. 30 Incremental base sheet resistor (VDP)

33 8.2 3. 31 B, E, C, M Etch-control structures'^

34 8.3 3. 32 B, C, M Resolution structures'^

14 4.10 3. 33 Metal step-coverage resistor

^B = bridge; CS = channel stop; DGR = diffused guard; FP = field plate;

N = negative photoresist; P = positive photoresist; VDP = van der Pauw.

'^B = BASE mask; E = EMITTER mask; C = CONTACT mask; M = METAL mask.

Structures designed for the resistivity-dopant density evaluation.

4
Figure 1. Test pattern NBS-3 fabricated with the BASE (B) , EMITTER (E)

,

CONTACT (C) , and METAL (M) masks. The length of the pattern along one side

is 200 mil (5.08 mm)

,

5
3. TEST STRUCTURES

In sections 4 through 8 each test structure is described along with the

intended purpose. The structures are grouped in five major categories:

resistors, MOS capacitors, diodes, transistors, and miscellaneous. Formulas

for calculating such quantities as resistivity, dopant density, and sheet

resistance are presented where applicable. The symbols used in the following ! text are explained at the bottom of table 1 or are indicated on the relevant ; test structure. !

In the following sections both a detailed top view layout and cross sectional

view of each test structure are given. Figure 2 illustrates the scheme used.

In the top views the distance between grid lines represents 0.50 mil (12.7 ym

In the cross sectional views, metal regions are black and oxide regions are - dotted. Emitter regions are clear and indicated by a solid line one unit ; below the silicon surface. Base regions are clear and indicated by a solid

line two units below the silicon surface. (In these views a unit is the dis

tance between adjacent grid lines. Also the silicon surface is assumed to be I flat for the sake of simplicity; the incorporation of silicon into the oxide i during thermal oxidation has been ignored.) \ w

--

s T

f »

S5

wmai

'J 1

' iS I

1 / t r t

= - r

c 5 e I

L

Figure 2. An illustration of the notation used in the cross sectional view of a test structure. The distance

between grid lines is 0.50 mil (12.7 ym) . In the top

view B = base, E = emitter, and C = collector.

In the text the term emitter applies to both bipolar transistor emitter

regions and to channel stop (CS) regions. The term base applies to both

bipolar transistor base regions and to MOS transistor source-drain regions.

Emitter and collector refer to regions with the same conductivity type which

is opposite from the conductivity of base regions. The emitter is more

heavily doped than the collector.

6
4 . RESISTORS

4.1. Base Sheet Resistor (VDP) , Structure 3.22

Base sheet resistor (VDP), structure 3.22, is a four-terminal resistor

arranged in an orthogonal van der Pauw (VDP) configuration [12] and consists

! of a base diffused into the collector. As indicated below the active base

! region is a square whose side, S, is 1.50 mil (38.1 ym) which is typical of

integrated circuit device geometries. The sheet resistance, Rg (VDP) , is

! calculated from

Rs(VDP) = (V/I) (TT/Zn2) (1)

where the potential, V, is V3^-V2 for a current, I, passed into 1^ and out of

l2.

1 1

1 ri

1

>-

1

s -

t

1

1 i-

> h

I

7
4.2. Base Sheet Resistor (B) , Structure 3.28

Base sheet resistor (B) , structure 3.28, is a four-terminal resistor arranged

in a bridge (B) configuration and consists of a base diffused into the collec

tor. This structure was designed according to ASTM standard F 76 [13] . The

photomask dimension for the oxide window width, W{mask), is 1.50 mil (38.1 ym

and the length, L(mask), between voltage taps is 6.0 mil (152 ym) . The sheet

resistance, Rg, is calculated from

(V/I) [We/L (mask)

(2)

where the potential, V, is V1-V2 for a current, I, passed into and out of

The effective window width, Wg, is

W,e = W(mask) + aXj + Wqb (3)

where Xj is the junction depth, a is a coefficient which accounts for lateral

diffusion effects [14], Woe over-etch width. These quantities are illustrated in figure 3. Combination of the I/V ratio measured from this

oX

2

w.oe |-W(mask)-i^ ^

W *

l- '..-

'.v' H.'.

'.t.'

^:«J.-.-.-i.-'.-'.it.-.--^.-T-.-.«.N-.-.-.-.-.'-i~* i i." i

'

i 'i t • I I

Figure 3. Cross sectional view of a diffused region showing various dimensions .

structure with the sheet resistance Rs(VDP) measured from structure 3.22

leads to an equation for the effective base window width, Wg, [15]

Wg = Rg (VDP)L(mask) (I/V). (4)

8
4,3. Base Sheet Resistor (VDP, FP, CS) , Structure 3.11

Base sheet resistor (VDP, FP, CS) , structure 3.11, is a four-terminal resistor arranged in a van der Pauw (VDP) configuration [12] and consists of a base

diffused into the collector. An emitter is diffused around the base and acts

as a channel stop (CS) . A metal field plate (FP) lies on top of the collector oxide between the base and channel stop and serves to shut off surface

currents when it is biased so as to accumulate the collector. The active

region is a circle 17.0 mil (432 ym) in diameter. The sheet resistance, Rg

,

is calculated from

Rg = (v/I) i-n/lnl) (5)

where the potential, V, is ^-1-^2 ^ current, I, passed into Ii and out of

I2. This structure is useful when evaluating sheet resistances greater than

1000

rn

9
4.4. Incremental Base Sheet Resistor (VDP) , Structure 3.30

Incremental base sheet resistor (VDP) structure 3.30, is a four-terminal

resistor arranged in a van der Pauw (VDP) configuration [12] and consists of

a base diffused into the collector. The active region is 30.0 mil (762 ym)

in diameter. The sheet resistance, Rg , is calculated from

Rg = (V/I) (TT/Zn2) (6)

where the potential, V, and the current, I, are measured at the ends of the

four legs. This structure was designed to facilitate the measurement of dopant profiles by the incremental sheet resistance method [16]. The resistivity, pj_, of the increment is i

Pi"^ = ARg-VAX (7)

'

where AX is the thickness of the increment and ARg is the sheet resistance of

the increment. This method requires a method for determining AX and, in

order to obtain dopant density values, requires a knowledge of the resistivity

dopant density relation. An apparatus for automating this measurement is

described elsewhere [17]

1 1

1 !

1

!

1 -r1 —

1

.._ —

1

1

1 —

1 § c r 1 e n 1 1.

1

1 —

—

1

-<k 1

I— 1! 1

10
4.5. Emitter Sheet Resistor (VDP) , Structure 3.21

Emitter sheet resistor (VDP), structure 3.21, is a four-terminal resistor

arranged in an orthogonal van der Pauw (VDP) configuration [12] and consists

of an emitter diffused into a base. The discussion for structure 3.22,

section 4.1, is applicable to structure 3.21.

1 1 I

1

i 1

1 1

1 r -- *

•, '• • '*!*

'

N .•. r

- - -

1

>-

- _

1

1

1

1

1 —1— 1 1 1 i

1

4.6 Emitter Sheet Resistor (B) , Structure 3.27

Emitter sheet resistor (B) , structure 3.27, is a four-terminal resistor

arranged in a bridge (B) configuration and consists of an emitter diffused

into a base. The discussion for structure 3.28, section 4.2, is applicable

to structure 3.27.

n

11
4.7. Metal Sheet Resistor (VDP) , Structure 3.20

Metal sheet resistor (VDP), structure 3.20, is a four-terminal resistor

arranged in a van der Pauw (VDP) configuration [12] and consists of metal

deposited over the collector oxide. The discussion for structure 3.22,

section 4.1, is applicable to structure 3.20. The arms on this structure

have a width of 0.25 mil (6.4 ym) which requires tight control of the metal

etch step to prevent the arms from being etched away.

i

12
4.8. Metal-to-Base Contact Resistor, Structure 3.24

Metal-to-base contact resistor, structure 3.24, is a four-terminal resistor

which consists of a base diffused into the collector and metal which touches

the base at a square window 1.00 mil (25.4 ym) on a side; see figure 4. The

effective contact resistance for a unit area, , as given by this structure

is calculated from

Rc = AV/I (8)

where the potential, V, is V2^-V2 for a current, I, passed into and out of

I2 and A is the area of the contact. For a square contact window of 1.00 mil

(25.4 ym) on a side, A = 6.45 x 10~^ cm"^. This structure is intended to serve as a process control monitor. It is not intended to yield absolute

values for the specific contact resistance for the effective contact resistance determined by this structure is influenced by over-etch of the contact

window and by current crowding effects since only a fraction of the contact

carries a significant current [18] . Over-etch of a contact window occurs

because the contact window is etched at the same time as the scribe lines.

Etching the scribe lines requires removal of the collector oxide which is

thicker than the base oxide.

13
4.9. Metal-to-Emitter Contact Resistor, Structure 3.23

Metal-to-emitter contact resistor, structure 3.23, is a four-terminal resistor which consists of an emitter diffused into a base and metal which touches

the emitter at a square window 1.00 mil (25.4 ym) on a side. The discussion

for structure 3.24, section 4.8, is applicable to structure 3.23.

! —

-r

i_ -4 -- -t—

l--|-T

1

t - 4—

_i _

--j.

—

-

- - -

if"

-\-

!

-_.

V

I- . - V

L

-H1

1

1 1 — IIIIII

1

4.10 Metal Step-Coverage Resistor, Structure 3.33

Metal step-coverage resistor, structure 3.33, is a two-terminal resistor

which consists of a serpentine metal path 0.50 mil (12.7 ym) wide which

crosses 18 oxide steps etched by the CONTACT mask. Two resistors are com- bined into one structure. In one resistor the serpentine path crosses the

oxide steps in a direction perpendicular to the other resistor. This allows

a check of shadowing effects during metal deposition. This structure is used

to check for metal continuity [19] . As shown below, the left-hand resistor

is 31 squares long and the right-hand resistor is 35 squares long.
4.11. Collector Resistor (FP, CS) , Structure 3.1

Collector resistor (FP, CS) , structure 3.1, is a three-terminal resistor

which consists of an emitter diffused into the collector. A metal field

plate (FP) over the collector oxide controls the surface currents between

the emitter and the channel stop (CS) . The resistance is determined from

the voltage drop between E]^ and the backside for a current between E2 and

the backside. In operation the field plate is biased so as to invert the

collector surface. The collector resistivity is calculated with use of an expression which appropriately models the peripheral spreading resistance.

Various expressions are available [20] , [21] . This structure is intended

for use on epitaxial layers deposited on more heavily doped substrates of

the same conductivity type. The thickness of the layers must be small com- pared to the width of the field plate, 4.0 mil (102 ym) , so that the peripheral current spreading is easily modeled. Since the backside contact resistance is in series with the collector, it must be negligibly small compared

with the collector resistance in order to determine the collector resistivity

accurately.

15
4.12. Collector Spreading Resistor (Small), Structure 3.12

Collector spreading resistor (small), structure 3.12, is a three-terminal

resistor which consists of an emitter diffused into the collector. The

emitter is surrounded by a base diffusion which eliminates surface currents.

The base diffusion is broken at a series of points which serve as voltage

taps to monitor the potential drop as a function of distance from the emitter. The drop in voltage with distance from the emitter is a sensitive

monitor of the backside contact resistance. A linear model for this voltage drop is given by Bilotti [22] for the case of no contact resistance.

In the absence of backside contact resistance the collector resistivity is

calculated with the use of an expression which appropriately models the

peripheral spreading currents. Various expressions are available [20], [21]

—

1

i

1

: J

^ -r f—

1 1

F

- J

— - -

_ —

-1

1 1 — — _ 1 _

1 -

- [-1 —j1

- nffl i -4

J.— i +-

ht- 9

. 3 ..... —-i

1 —f- x:

1 H- —

4--

-

- mm L ill til

!~ iil - ta ril ta fir ill

.]-!-[--

1 -

16
4.13. Collector Spreading Resistor (Large), Structure 3.18

Collector spreading resistor (large), structure 3.18, is a three-terminal

resistor. Its design is similar to that of structure 3.12, section 4.12.

17
4.14. Collector Resistor (DGR) , Structure 3.7

Collector resistor (DGR), structure 3.7, is a three-terminal resistor which

consists of two emitters diffused into the collector. The collector resistivity and backside contact resistance are calculated from measurements which

require perpendicular current flow beneath the center emitter and the backside. (This current is introduced at E2.) Perpendicular current flow is

established by adjusting the current through the peripheral emitter E3 , a diffused guard ring (DGR) , and the backside so that the voltage difference

between E3 and E2 is zero. If the backside contact resistance is negligible,

the collector resistivity, p, is calculated from \

p = (v/i) (A/xt) (9) : where V is the voltage difference between E^ and the backside, I is the curren

into E2, Xt is the thickness of the silicon between the emitter and the back- , side of the wafer, and A is the effective area of the center emitter. From

the theory of the guarded capacitor [23] a good estimate for A is obtained by

using the geometrical mean of the inner and outer radii of the gap between ! the center emitter and peripheral emitter. If the collector resistivity, p, ; is known from an independent measurement (e.g., structure 3.17) , then the ] backside contact resistance, Rc , is calculated from

Rc = Rm - pXt/A (10) '

where Rj^ is the measured resistance given by V/I as explained above.

j In this measurement the center emitter must be an equipotential surface. This!

is achieved by heavily doping the emitter and by using thick metal. The place 1 ment of probes and the use of multiple probes to contact the same metal areas

are important in achieving an equipotential surface.

18
4.15. Collector Four-Probe Resistor, Structure 3.17

Collector four-probe resistor, structure 3.17, is a four-terminal resistor

with four point contacts arranged in a square array. It is intended for the

evaluation of the collector resistivity. This structure is fabricated by

diffusing a base over a large area except at the four point contacts which

are protected from the base diffusion by four base-oxide islands. Emitters

are diffused at these points in order to make low resistance contact to the

collector material. The purpose of the base diffusion is to eliminate surface

currents. The collector resistivity, p, is calculated from [24]

p = (V/I) (2us)/(2-/^) (11)

where the potential, V, is V1-V2 for a current, I, passed into and out of

I2 and s is the probe spacing. The spacing is taken as the center-to-center

distance of 2.25 mil (57.2 ym) . The above formula assumes that the thickness

of the silicon wafer is large compared to the probe spacing and that the

shorting effect of the backside metallization is negligible. For a wafer

thickness, Xt, greater than or equal to 9.0 mil (229 ym) , where X^/s >_ 4,

the correct resistivity when the backside is metallized is less than O.S percent larger than the measured resistivity. When the backside is not metallized

the correct resistivity for X^/s ^ 4 is less than 0.8 percent smaller than the

measured resistivity [25] . The collector resistivity value calculated from

the above formula does not depend on the backside contact resistance which

does affect structures 3.1, 3.7, 3.12, and 3.18. The proper fabrication of

structure 3.17 depends on the fabrication of a bipolar transistor with finite

gain. This insures that the emitter has not been punched through the base and

consequently that the current passes into the collector through a narrow channel.

A BASE (modified) mask was designed with oversize base-oxide islands which are squares 0.50 mil (12.7 ym) on a side. The details of this mask were discussed

in the Introduction. As shown below the base-oxide islands are squares 0.25 mil

(6.4 ym) on a side.

-rr1 .J

1

1

>-

a

1 i

a I

> A t

1

19
4.16. Collector Hall Effect Resistor, Structure 3.26

Collector Hall effect resistor, structure 3.26, is a four-terminal resistor

formed when this test pattern, fabricated on a silicon wafer, is scribed into

a square chip 100 mil (2.54 mm) on a side. The backside metal must be removed

for this structure to operate properly. Scribe lines were purposefully omitted from the BASE and EMITTER masks to prevent doping the periphery of this

structure. Contacts are formed in the four corners by an emitter diffused in

a square 4.5 mil (114 ym) on a side. (This is the net size of the emitter

contacts after the wafer is scribed into chips where the chip has separated

in the middle of the scribe line.) For this case the ratio of the length of

the contact to the length of the chip is 0.045. For this ratio the correction

factor for the Hall coefficient is less than 2 percent and the correction factor for the resistivity is much less than 1 percent [26]. The resistivity, p, is calculated from [12]

p = (Vp/I) (TTXt/ln2) (12)

where is the wafer thickness, Vp is the voltage difference measured between

nearest neighbor contacts for a current, I, passed between the remaining two

contacts. The Hall coefficient, Rjj, is calculated from [12]

% = (VHXt)/(BI) (13)

where is the voltage difference measured between opposite contacts for a current, I, passed between the remaining two contacts and B is the magnetic

field density perpendicular to the plane of the chip. The collector dopant

density, N, is calculated from

N = r/[q|RH|] (14)

where q is the electronic charge and r is the scattering factor [8] , [9]

The recommended measurement procedures for these measurements are described

elsewhere [13]

-h 1-

1

, 1 r—

> : r D e

i €

c r T :

1 \ L

20
5. MOS CAPACITORS

5.1. MOS Capacitor Over Collector (FP, CS) , Structure 3,

MOS capacitor over collector (FP, CS) , structure 3.8, consists of a main gate,

Gi, 15.0 mil (381 ym) in diameter which is surrounded by a field plate (FP)

G2 that overlaps a channel stop (CS) which also serves as a topside collector,

C, contact. The collector dopant density, N, is calculated from the high

frequency C-V Cinax~Cniin method [7] by using the transcendental relation:

^ - 1 + A

4kT

In, 1 1/2

_ s

, n

(15)

1/-

where Cq is the maximum (oxide) capacitance, Cj^ is the minimum (inversion)

capacitance, A is the main gate area, k is the Boltzmann constant, T is temperature, £3 is the silicon dielectric constant, q is the electronic charge,

and nj^ is the intrinsic carrier concentration. The value for N calculated

from this method is a surface value which may be different from the bulk value

due to dopant redistribution during oxidation [7]

To determine the bulk collector value a dopant profile is obtained by use of

the high frequency C-V deep depletion method [6] where the collector dopant

density, (W) , in an incremental region is calculated from

Ni(W) = (2/qesA2) [AV/A (C-2)

where AV is an incremental change in the gate voltage . The measured MOS

capacitance, C, is

-

+ C<

(16)

(17:

where Cg is the semiconductor capacitance. The depth, W, from the oxidesilicon interface to the edge of the depletion region is

W = £^A/Cs' (18)
5.2. MOS Capacitor Over Collector, Structure 3.19

MOS capacitor over collector, structure 3.19, consists of a circular main

gate 15.0 mil (381 ym) in diameter without a peripheral field plate. This

structure is useful in evaluating charge spreading (ion migration) phenomena

[27] .

5.3. MOS Capacitor Over Collector, Structure 3.25

MOS capacitor over collector, structure 3.25, consists of a small square

main gate 4.0 mil (102 ym) on a side without a peripheral field plate. This

structure is useful in evaluating measurement limitations due to small gate areas
5.4. MOS Capacitor Over Base, Structure 3.2

MOS capacitor over base, structure 3.2, consists of a metal gate, G, 15.0 mil

(381 ym) in diameter on top of an oxide layer over a diffused base, B. A

diffused emitter surrounds the base and serves as a topside collector, C,

contact. This structure is used to evaluate the base surface dopant density

by the methods described in section 5.1 for structure 3.8. This structure is

also useful as a base-oxide pinhole test. It can also be used for basecollector diode C-V measurements; however, the junction area calculation is

somewhat complicated by the fact that the junction is not circular.

23
5.5. MOS Capacitor Over Emitter, Structure 3.3

MOS capacitor over emitter, structure 3.3, consists of a metal gate, G,

15.0 mil (381 ym) in diameter on top of an oxide grown over a diffused emitter

E. Topside contact is provided to both the emitter and base. A diffused

emitter surrounds the base and serves as a topside collector, C, contact.

This structure is used to evaluate the emitter surface dopant density by the

methods described in section 5.1 for structure 3.8. This structure is also

useful as an emitter oxide pinhole test and as a bipolar transistor.

24
6. DIODES

6.1, Base-Collector Diode (FP, CS) , Structure 3.10

Base-collector diode (FP, CS) , structure 3.10, consists of a base 17.0 mil

(432 ym) in diameter diffused into a collector and a metal field plate (FP) , G, to control the periphery. The field plate overlaps both the base and a diffused emitter channel stop (CS) which also serves as a topside collector,

C, contact. The collector dopant density, Ni (W) , in an incremental region is

calculated from the Schottky equation:

Ni(W) = (2/qesA2) [AV/A (C-M ] (19)

where AV is an incremental change in the applied voltage, C is the junction

capacitance, q is the electronic charge. Eg is the dielectric constant of

silicon, and A is the area of the base. The effective depth, W, is taken, in

the simplest case of a one-side junction, as W = GgA/C. (20)

For junctions found in practice, peripheral capacitance and diffused layer

effects may be taken into account by a model and computer program detailed

elsewhere [28] . To obtain a correct profile the field plate must be biased

at the flat-band potential [5]

25
6.2. Base-Collector Diode (FP, CS) , Structure 3.14

Base-collector diode (FP, CS) , structure 3.14, consists of a base 5 mil

(127 ym) in diameter diffused into a collector. This structure is a miniature version of structure 3.19 described in section 6.1 The metal field

plate (FP) , G, has a metallized contact which extends over the collector.

The field plate controls the periphery of the junction and extends from the

base to the diffused emitter channel stop (CS) which serves as a topside

collector, C, contact. The base is large enough so that its metallization

is confined within the base diffusion. This allows precise measurement of

the junction capacitance needed in the computation of dopant density values.

26
6.3. Emitter-Base Diode (FP) , Structure 3.9

Emitter-base diode (FP) , structure 3.9, consists of an emitter 17.0 mil

(432 ym) in diameter diffused into a base and a field plate, G, to control

the periphery of the emitter. This structure is intended to be used to

obtain base dopant profiles by the method described in section 6.1 for structure 3.10. The use of this method for obtaining base dopant profiles should

be approached with caution in the light of recently published work [29]

27
7. TRANSISTORS

7.1. Bipolar Transistor, Structure 3.13

Bipolar transistor, structure 3.13, consists of a square emitter, E, 5.5 mil

(140 ym) on a side diffused into a base, B, and an emitter diffused into a collector to provide topside collector, C, contact. This vertical transistor

is intended to verify that the emitter and base diffusions have formed a transistor structure with finite gain. This is one of the requirements

needed to insure the proper fabrication of the collector four-probe resistor, structure 3.17, described in section 4.15.

7.2. Tetrode Transistor, Structure 3.6

Tetrode transistor, structure 3.6, consists of a donut shaped emitter [30]

with an inside diameter of D^^ = 6.0 mil (152 ym) and an outside diameter of

D2 = 17.0 mil (432 ym) diffused into a circular base 23.5 mil (597 ym) in

diameter. This structure is intended to be used to obtain the sheet resistance, Rg , of the base-under-emitter which can be calculated from

Rs = (V/I) [2u/Zn (D2/D1 ) ] (21)

where V is the potential drop between the center, B^, and outer, B2 , base

contacts for a current, I, passed between these contacts. This structure

is a two-terminal resistor, but interference due to the contact resistance

is negligible because the contact resistance is usually much smaller than

the sheet resistance.

The incremental resistivity can also be measured in a narrow region of the

base by adjusting the width of the base region which is conducting current.

This is accomplished by changing the bias across the emitter-base junction

which varies the width of the emitter-base depletion region. The base resistivity, (W) , in an incremental region is calculated from

2esTTA A(C"M

Pi^^) = Zn(Da/Di) ^^^^

where eg is the dielectric constant of silicon, R = V/I, A is the area of

the emitter-base junction, and C is the capacitance of the emitter-base junction. This expression is similar to those derived by others [11] . The

incremental region is located at a distance W from a one-sided junction.

28
This distance, W, is given by

W = egA/C. (2 3)

The base dopant density, Nj^ (W) , for the incremental region located at W is

given by

N-l(W) = (2/qesA^) (AV/AC"2 ) (24)

where AV is the change in the voltage across the emitter-base junction. The

above equations for Pj^ (W) and (W) yield a variety of values for the resistivity versus dopant density relation. These relations for Pi (W) and N-^ (W) may

be combined to yield mobility profiles, yj_ (W) , through the base as given by

yi(W) = l/qPiN^ (25)

where q is the electronic charge. Due to increased crystalline dislocations

and other impurity scattering centers in base regions, the mobilities measured here are expected to be lower than in bulk silicon.

29
7.3. MOS Transistor, Structure 3.16

MOS transistor, structure 3.16, consists of base diffusions which serve as a source, S, and drain, D. The gate, G, has a photomask W/L ratio of 4 where

L = 0.50 mil (12.7 ym) . This structure is intended to simulate the electrical characteristics of a typical integrated circuit device.

1

1 1_„

1

1

-|-^

-jX- -

I - --\

1

1 - X

• r—

30
7.4. MOS Transistor, Structure 3.15

MOS transistor (circular), structure 3.15, consists of base diffusions which

serve as source, and S2, and drain, and D2, and a gate, G. This structure, being circular, has an edgeless gate region which simplifies the geomettrical calculation associated with the current flow. The effective photomask

W/L ratio is 2fT/Zn (R2/R1 ) where the inside radius of the drain, R2 , is 12 mil

(305 ym) and the radius of the source, , is 8.5 mil (216 ym) , so that W/L = 18.22. The source and drain regions have dual metal contacts that allow fourterminal measurements of the inversion region channel mobility. From the measurement of the low voltage transconductance , Gq = Ids/^DS' a function of

gate voltage, Vgg, the channel mobility, y, can be calculated from [31]

y = (XqcL/eoW) (AGq/AVqs) (26)

where AVgg is the incremental change in the gate to source voltage, Xqc is the

collector oxide thickness and Eq is the oxide dielectric constant. The gate

oxide thickness may be determined from structure 3.29, section 8.1, or from

structure 3.8, section 5.1, using Xq^^, = e^A/Cq.
8 . MISCELLANEOUS

8.1. Surface Profilometer Structure, Structure 3.29

Surface profilometer structure, structure 3.29, consists of a region where

a mechanical stylus-type profilometer is used to evaluate various regions

for process control and diagnostic purposes. The cross sectional drawing of

this structure as shown below is a schematic view, for the silicon surface

is shown flat. In fact the silicon surface does vary due to the incorporation of silicon into the oxide during various oxidation steps. (This is

illustrated by the profile shown on page 38.) The surface contour over the

base oxide is obtained from (A) and over the emitter oxide is obtained from

(B) . The surface contour of the silicon surface over collector, base, and

emitter are obtained from (C) . The thickness of various layers is determined from (D) : Xoe is the oxide thickness over the emitter, Xob is the

oxide thickness over the base, Xqc is the oxide thickness over the collector,

and Xjn is the metal thickness. For diagnosing the smallest geometry structure, 3.17, the critical portion of this structure is elongated in one direction as seen in (E) and (F) . In (E) the oxide is removed and in (F) the

metal is removed. A metal resolution pattern is seen in (G) . Between each

structure a metal marker is provided for easy identification of structures.

1 1

i

4

i ] < 1 v1 ^< --I ,\ < 'f 1 ti F n

' - J. .

• *

1

1- V

-t.

- m

~ - S- —

- ._jL.. -

V

ffl

1

III 1

1

32
8.2. Etch-Control Structures 3.31 B, E, C, M

Etch-control structures, structures 3.31 B, E, C, M, consist of squares

offset by multiples of 0, 1, and 2 times 0.25 mil (6.4 ym) . The layout of

the BASE, EMITTER, and CONTACT oxide etch structures is identical; for these

structures over-etch causes the squares to increase in size. This effect is

illustrated in figure 5.

1

1 j- 1 u tHI A

i--

Figure 5. Etch-control structure where

the regions within the squares were etched out so as to increase the size of

the squares to the dotted lines.

The layout of the METAL etch structure is different, for over-etch causes

these squares to decrease in size. The alignment of the sides of adjacent

squares indicates that the over-etch is between 0 and 0.125 mil (3.2 ym) or between 0.125 mil (3.2 ym) and 0.25 mil (6.4 ym) or greater than 0.25 mil

(6.4 ym) . As illustrated in figure 5, the amount of over-etch is 0.125 mil

(3.2 ym) . These patterns provide a rapid visual indication of over-etch

problems, since the amount of over-etch is easily determined.

-

.J

. f 1

1

33
8.3. Resolution Structures, Structure 3.32 B, C, M

Resolution structures, structures 3.32 B, C, M, consist of offset rectangles

which are spaced in multiples of 1, 2, 3, and 4 times 0.25 mil (6.4 ym)

This pattern is found on the BASE, CONTACT, and METAL masks and indicates' the

quality of the photolithographic and etching processes.

8.4. Alignment Markers, Structures 3.4 N, P

Alignment markers, structures 3.4 N, P, consist of concentric squares whose

sides differ by 0.5 mil (13 ym) . Two markers are present; one for use with

positive photoresist, indicated by a P, and another for use with negative

photoresist, indicated by an N.

MASK

PASSIVATION

CONTACT

EMITTER

BASE

METAL

METAL

BASE

EMITTER

CONTACT

PASSIVATION

WITHIN

SQUARE

(clear)

(clear)

(clear)

(clear)

(black)

(clear)

(black)

(black)

(black)

(black)

8.5. NBS Logo, Structure 3.5

NBS logo, structure 3.5, consists of the symbols NBS formed in the metaliza1

1 s

/-\

y

s / —t-

-4

34
9. AN n-p-n TRANSISTOR FABRICATION PROCESS

Recall that the main objective of this test pattern is to evaluate the

resistivity-dopant density relation in n- and p-type bulk silicon over the

dopant density range from less than 10^'* to above 10 cm~ ^ . To accomplish

this task an n-p-n transistor process and a p-n-p transistor process were

developed. To illustrate the use of this pattern the n-p-n transistor process is described.

The fabrication process is outlined in table 2 which indicates the steps in

the fabrication of an n-p-n transistor in a bulk, (111) oriented, nominally

10 fi'cm, n-type silicon wafer. Target values are shown for the sheet resistance, Rs(^/[])/ the junction depth, Xj(ijm), and the layer thickness, X(nm).

In the fabrication process four photomasks were used: BASE (modified)

EMITTER, CONTACT, and METAL. The wafer is also metallized on the backside

to reduce the backside contact resistance. The cleanup steps involve an ammonium hydroxide-peroxide mixture followed by a hydrochloric acid-peroxide

mixture [32]. The flow rate for steps 2, 5, 6, 9, 14 and 26 is SOOcmVmin.

The flow rates for step 12 are 3265 cmVmin of N2 , 35 cmVmin of O9, and

200 cmVmin of PH3.

Table 2 - An n-p-n Transistor Wafer Fabrication Process

r\\\\\j flmh "i pni" 1 c 1 ) L L ) III 1 1

f^S > o/n. "/LI' pm.

Y^ » nm1 111!

1Cleanup (ultrasonic)

2. Oxidation (25 ml H2O) 1100 O2 (W), O2, N2 20, 20, 20 ~ > 350

3. BASE photoresist 2.5

4. Cleanup

5. BN preparation (A-type) 965 N2 30

6. Boron deposition 965 N2 25 50,

7. Deglaze (10% HF) 0.5

8. Rinse (DI; spin dry under N2) 5

9. Drive-in diffusion (25 ml H2O) 1100 O2 (W), O2, N2 20, 40, 20 200, 2 , 360

10, EMITTER photoresist 3 n. Cleanup

12. Phosphorus diffusion (PH3) 1000 N2 02 PH3 20

13. Deglaze (10% HF) 0.2

14. Oxidation (steam) 925 O2 W), O2, N2 30, 5 , 10 10, 1 , 220

15. CONTACT photoresist 3 16. Cleanup

17. Topside Al evaporation (E-gun) "* > 800

18. METAL photoresist

19. Wax wafer face down

20. Backside oxide removal

(1:1 DI:HF) 0.75

21

Rinse (DI; spin dry under N2)

22. Backside silicon removal (CP-6)

23. Rinse (DI; spin dry under N2)

24. Backside Au evaporation (filament)

0.6% Sb doped Au 200

25. Dewax (TCE, acetone cobaltous

nitrate, DI)

26. Microalloy 500 N2 30

W

= DI wet. CP-6 = 5:4.5:3 parts of HNO3:

= deionized water. Acetone Acid HF. TCE = trichloroethylene.

35
10. TEST PATTERN NBS-3 MEASURED VALUES

In this section, test results obtained from various test structures are presented for the n-p-n transistor fabrication process described in the

previous section. These measured values are intended to indicate the kind

of information obtainable from this test pattern. More detailed measurements

on some of the structures are presented elsewhere [5]

.

All electrical measurements were made in the dark at room temperature. The

measured values, listed in table 3, represent the mean and one sample standard deviation of five measurements taken on a two-inch (5 cm) diameter silicon wafer. The measurements were taken at sites located at the top, bottom,

left, middle, and right positions on the wafer where the distance between

sites was 600 mil (15 mm) . The measured values were calculated by using the

formulas presented in sections 4 through 8.

The resistor test structures were measured by forcing a current in opposite

directions through the structure and averaging the resulting voltages. For

the van der Pauw and four-probe resistor structures, additional voltages were measured by shifting the voltage and current points to the next adjacent

point. These voltages were then averaged with the first voltages.

As seen in table 3 the base sheet resistance values measured by use of the van der Pauw structures 3.11, 3.28, and 3.30 are close to 190 fi/D. This

verifies that the van der Pauw sheet resistance values are not dependent on the geometry of the structure. The base sheet resistance value measured by use of the bridge structure 3.28 is 173 ^/U which is lower than the van der

Pauw values because a Wg of 1.50 mil (38.1 ym) was used in the bridge sheet

resistance calculation. As calculated from equation (4), the effective width,

Wg, of the base bridge structure is 1.64 mil (41.7 ym) due to the over-etch

of the oxide window and lateral base diffusion. Similar remarks hold for the

emitter sheet resistance where the van der Pauw value of 10.7 fi/D is higher

than the bridge value of 9.8 fi/Q. The effective width. We, of the emitter bridge

structure is 1.57 mil (39.9 ym) . The emitter-oxide window was over-etched by

Woe ~ 0.06 mil (1.5 ym) . The combination of measurements from the bridge and van der Pauw sheet resistance structures provides a rapid means for determining the width of oxide windows. Measurements on the orthogonal van der Pauw

structures 3.20, 3.21, and 3.22 demonstrate that this structure is capable of

evaluating sheet resistances which vary from 0.03 fi/D for the metallization

to 190 ^/U for the base. The metal-to-base contact resistance of 1.5 yfl'cm^

is larger than the metal-to-emitter contact resistance of 0.18 yf2*cm^. The

contact resistance values are intended as a qualitative check on the process,

for they are influenced by many factors including the contact window area and

the sheet resistance of the diffused layer. The step coverage resistance is an average of the resistances measured on the two resistors. Four-probe re- sistor measurements indicate that the n-type collector substrate resistivity

is 11.2 f^'cm; a probe spacing of 2.25 mil (57.2 ym) was used in the calculation. To validate these results the gain of the bipolar transistor, structure

3.13, was measured. A gain of 80 indicates that the emitter is not shorted to

the collector.

Capacitance-voltage measurements were made on a variety of structures and

various dopant densities were determined. The capacitances were measured at

1 MHz with the use of a 15 mV rms signal. The MOS capacitor over the collector (3.8) was measured by two methods. The dopant density, 4.7 x 10^** cm~^

determined from the Cmax'^^min method is higher than the 4.3 x 10^"* cm" ^ value

calculated from the deep-depletion method. The difference in these values is

due to the region sampled by the two methods. The Cj^ig^j^- Cj^-^j^ method samples

the dopant density near the oxi-de-silicon interface where phosphorus is piled

up during the oxidation steps; the deep-depletion method samples the true

collector substrate dopant density. Other MOS capacitor values are listed.

The dopant density value determined from the small MOS capacitor, consisting

of a square 4 mil (102 ym) on a side, is larger than values measured on the

larger capacitors because the area and peripheral capacitance corrections
I Table 3 - Measurements on Test Pattern NBS-3*

Test Measured

1 structure Equation Conditions Quantity Measured Val ue Units

DP R, 3.22 (1) I = 0.3 mA Base Rs 189 + 4

DP R, 3.n (5) I = 0.3 mA Base Rg 189 + 5

DP R, 3.30 (6) I = 0.3 mA Base Rg 190 + 5 ridge R, 3.28 (2) I = 0.2 mA, L/Wg = 4 Base Rg 173 + 4 n/Q

DP R, 3.21 (1) I = 10 mA Emitter Rg 10.7 + 0.5 n/Q

jridge R, 3.27 (2) I = 0.5 mA, L/Wg = 4 Emitter R^ 9.8 + 0.5 a/U

DP R, 3.20 (1) I = 100 mA Metal Rg 0.0336 + 0.0006

etrode T, 3.6 (21) I = 0.04 mA Base-under-emitter R^ 3400 + 160

.22, 3.28 (4) L(mask) = 6 mil Base Wg 1.64 + 0.01 mil

.22, 3.28 (3) a = 0.3 Base Wog 0.12 + 0.01 mi 1

.21, 3.27 (4) L(mask) = 6 mil Emitter Wg 1 .57 + 0.01 mil

.21, 3.27 (3) a = 0.3 Emitter 0.06 + 0.01 mil

pntact R, 3.24 (8) I = 50 mA, A = 1 mi 12 Metal -to-base R^, 1 .45 + 0.05 yfl*cm2

jontact R, 3.23 (8) I = 50 mA, A = 1 mi 12 Metal-to-emitter R^- 0.177 + 0.005 yJ^ •Cm2

btal R, 3.33 ~ I = 8 mA Metal step coverage R 1 .61 + 0.02 a

, -Probe R, 3.17 (11

)

I = 0.070 mA Col lector p 11.2+0.5 fi'cm iransistor, 3.13 Common emitter gain 80 + 10 ~ pS C, 3.8 (15) *"max"^min Collector N 4.69 + 0.29 X lOi'* cm" 3

hDS C, 3.8 (16) Deep depletion Collector N 4.35 + 0.18 X lOi"* cm" 3

DS C, 3.19 (16) Deep depletion Collector N 4.43 +0.17 X iQi^ cm"^

PS C, 3.25 (15) ^max'^^min Col lector N 5.62 + 0.38 X lOi'^ cm" 2

;{DS C, 3.2 (16) Deep depletion Base N 2.41 + 0.4 X iQis cm" 3

iode, 3.10 (19) Collector N 4.36 + 0.25 X IQi^ cm" ^

[iode, 3.14 (19) Collector N 1 .26 +0.72 X IQis cm" 3

;i foTi le, 3.

li Emitter oxide Xgg 260 + 10 nm

profile, 3.29 Base oxide Xqi^ 360 +10 nm Vofile, 3.29 Col lector oxi de X^r 420 + 10 nm

Irofile, 3.29 Metal Xpi 770 + 10 nm Emitter Xjg 1 .23 + 0.05 pm Base Xj|3 2.00 + 0.05 pm Base width Xj5g 0.90 + 0.05 pm Wafer X^ 10.6 + 0.1 mi 1

Jafer 44. L(masl<) = 6.0 mil (152 m). A = 1 mi 12 = 6.5 X 10 ^ cm2. The symbol N refers to the dopant

density not the conductivity type.

37.
were not taken into account. The base surface dopant density, 2.4 x 10^® cm"^ was determined from the MOS capacitor over the base. Dopant density values were calculated from capacitance-voltage measurements taken on diodes 3.10

and 3.14. Equation (19) was used to evaluate the C-V data which were not

corrected for peripheral capacitance or diffused layer effects. These effects

have a minimal effect on the dopant density value derived from the large diodet

3.10; this dopant density agrees with values obtained from the MOS capacitors.

The dopant density value derived from the small diode 3.14 is too high because

the peripheral capacitance correction was not taken into account [5].

The thickness of various layers was obtained from the surface profilometer

structure 3.29 by use of a mechanical stylus-type profilometer. The thickness

of the metallization, Xj^, the oxide thickness over the emitter, Xqq, the oxide

thickness over the base, Xob/ and the oxide thickness over the collector, Xqq , are listed in table 3. A profile of structure 3.29 is shown in figure 6 along

with a schematic cross section. The profile shows in D the thickness of various layers, in C the contour of the silicon surface, in E and F the base-oxide

islands, and in G the resolution of the metal pattern. The BASE (modified)

mask was used where the base-oxide islands are squares 0.50 mil (12.7 ym) on

a side. The smallest line width on the metal pattern is 0.25 mil (6.4 ym)

and this line was clearly resolved. The roughness of the aluminum metallization is indicated by the spikes protruding from the metal.

ABC D E F G

Figure 6. The surface contour of the surface profilometer

structure 3.29. The vertical scale factor is 50.0 nm/division

and the horizontal scale factor is approximately 10 ym/division.

The A through G substructures are described in section 8.1.

The junction depths were obtained from the groove and stain method on unpatterned wafers included in the diffusion boat. The emitter junction

depth, Xje, the base junction depth, Xjt), and the base width, Xj^g, are listed in table 3.

38
11. DISCUSSION

The primary purpose of this test pattern is to enable the evaluation of the

resistivity-dopant density relation in both n- and p-type bulk silicon. This

objective is currently being achieved by an ongoing program which uses test

structures 3.8, 3.10, 3.17, and 3.26. The current status of this work is

reviewed elsewhere [5] . Some other structures are used as diagnostic tools

to verify that the structures of interest are fabricated properly. The re- maining structures are experimental in nature and allow the exploration of new designs and measurement methods.

The novel designs developed in this test pattern include the piped-collector

voltage taps which appear in structures 3.12, 3.17, and 3.18. This type of

construction allows for the smallest contact area to bulk silicon while com- pletely eliminating surface currents. The incorporation of a bulk Hall effect

resistor (3.26) with other planar test structures is a novel feature of this

test pattern, and this required the omission of the scribe avenues from the

BASE and EMITTER masks. This omission does not hinder the scribing and breaking of wafers into chips. The combination of sheet resistance measurements

from bridge (3.28) and van der Pauw (3.22) structures to obtain the effective

base width is a new concept as is the orthogonal design of the van der Pauw

structures (3.20, 3.21, and 3.22). This design is intended to be compatible

with automatic pattern generators which draw only orthogonal lines. The incremental base sheet resistor (3.30) is an exploratory structure intended to

assist in the automation of the incremental sheet resistance, anodic oxidation,

dopant profile method. Its implementation awaits the development of a proper

experimental apparatus. The incorporation of the surface profilometer structure (3.29) has proven invaluable especially in diagnosing fabrication problems

with the collector four-probe resistor (3.17). Over-etch of the base-oxide

islands was clearly visible in structure 3.29 (E) and (F) . The modular ar- rangement of the five sheet and contact resistors (3.20, 3.21, 3.22, 3.23,

3.24) with four bonding pads arranged in a square is an attempt to assist the

wafer probing of these structures. Other arrangements are possible; for example, the in-line pad array for structures 3.27 and 3.28; also see reference

[1] . Optimum modular pad arrangements are being sought in conjunction with

the design of various test structures.

ACKNOWLEDGEMENTS

The author wishes to thank all of the members of the Electronic Technology

Division who have participated in both the fabrication and testing of the

various test structures on this test pattern.

39
APPENDIX

In the following figures 7 through 10, the center-to-center distance between

the scribe lines is 100 mils (2.54 mm).

Table 4 - Test Structures Shown in Figure 7

Number Test Structure

3.1 Collector resistor (FP, CS)

3.2 MOS capacitor over base

3.3 MOS capacitor over emitter

3.4 N, P Al ignment markers

3.5 NBS logo

3.6 Tetrode transistor

3.7 Collector resistor (DGR)

3.8 MOS capacitor over collector (FP, CS)

3.9 Emitter-base diode (FP)

3.10 Base-collector diode (FP, CS)

3.11 Base sheet resistor (VDP, FP, CS)

40

Table 5 - Test Structures Shown in Figure 8

Number Test Structure

3 12 Collector spreading resistor (small)

3 13 Bipolar transistor

3 14 Base-collector diode (FP, CS)

3 15 MOS transistor (circular)

3 16 MOS transistor

3 17 Collector four-probe resistor

3 18 Collector spreading resistor (large)

3 19 MOS capacitor over collector

3.20 Metal sheet resistor (VDP)

3 21 Emitter sheet resistor (VDP)

3 22 Base sheet resistor (VDP)

3 23 Metal-to-emitter contact resistor

3 24 Metal-to-base contact resistor

3 25 MOS capacitor over collector

42
Figure 8. Test pattern NBS-3 quadrant 2.

43
Table 6. Test Structures Shown in Figure 9

Number Test Structure

3.26 Collector Hall effect resistor

44
Figure 9. Test pattern NBS-3 quadrant 3.

45
Table 7. Test Structures Shown in Figure 10

Number Test Structure

3.27 Emitter sheet resistor (B)

3.28 Base sheet resistor (B)

3.29 Surface profile structure

3.30 Incremental base sheet resistor (VDP)

3.31 B, E, C, M Etch-control structures

3.32 B, C, M Resolution structures

3.33 Metal step-coverage resistor

46

REFERENCES

1. Buehler, M. G., Semi oonduc tor Measurement Technology: Microelectronic

Test Patterns: An Overview, NBS Spec. Publ. 400-6 (August, 1974).

2. Irvin, J. C, Resistivity of Bulk Silicon and of Diffused Layers in

Silicon, Bell System Tech. J. 41, 387-410 (1962).

3. Caughey, D. M. , and Thomas, R. E., Carrier Mobilities in Silicon Empirically Related to Doping and Field, Proa, of IEEE 55_, 2192-2193 (1967).

4. Wagner, S., Diffusion of Boron from Shallow Ion Implants in Silicon,

J. Eleatroahem. Soa. 119 , 1570-1576 (1972).

5. Buehler, M. G., David, J. M. , Mattis, R. L., Phillips, W. E., and

Thurber, W. R. , Semiconductor Measurement Technology : Planar Test

Structures for Characterizing Impurities in Silicon, NBS Spec. Publ.

400-21 (December, 1975).

6. B. Van Gelder, W. , and Nicollian, E. H. , Silicon Impurity Distribution

as Revealed by Pulsed MOS C-V Measurements, J. Eleatroehem. Sao. 118 , 138-141 (1971).

7. Deal, B. E., Grove, A. S., Snow, E. H. , and Sah , C. T., Observation of

Impurity Redistribution During Thermal Oxidation of Silicon Using the

MOS Structure, J. Eleatroehem. Soa. 112 , 308-314 (1965).

8. Runyan, W. R. , Silicon Semiconductor Technology , p. 180 (McGraw-Hill,

New York, 1965)

9. Norton, P., Braggins, T., and Levinstein, H., Impurities and Lattice

Scattering Parameters as Determined from Hall Mobility Analysis in n- Type Silicon, Phys. Rev. B8, 5632-5653 (1973).

10. Buehler, M. G., Peripheral and Diffused Layer Effects on Doping Profiles,

IEEE Trans. Electron Devices ED-19 , 1171-1178 (1972).

11. Pomerantz , D. , Measuring Mobility and Density of Charge Carriers Near a

P-'N Junction, J. Eleatroehem. Soa. 112 , 196-200 (1965); Pals, J. A.,

Method of Measuring Mobility of Majority Carriers in Silicon Devices,

Electronics Letters 6_, 503-504 (1970) .

12. van der Pauw, L. J., A Method of Measuring the Resistivity and Hall

Coefficient on Lamellae of Arbitrary Shape, Philips Research Reports

1-9 (1958) .

13. Standard Method for Measuring Hall Mobility and Hall Coefficient in

Extrinsic Semiconductor Single Crystals, ASTM Designation F 76, Annual

Book of ASTM Standards, Part 43 (November, 1975). (Available as a separate reprint from American Society for Testing and Materials, 1916

Race Street, Philadelphia, Pennsylvania 19103.)

14. Penny, W. M. , and Lau, L., Eds., MOS Integrated Circuits, pp. 113-116

(van Nostrand Reinhold Company, New York, 1972).

j 15. Buehler, M. G., and David, J. M. , Bridge and van der Pauw Sheet Resis- \ Lors for Characterizing the Sheet Re'sistance and Oxide Window Width of

Diffused Silicon Layers (in preparation)

16. Donovan, R. P., and Evans, R. A., Incremental Sheet Resistance Technique t for Determining Diffusion Profiles, Silicon Device Processing , C. P. Marsden, Ed., NBS Spec. Publ. 337, pp. 123-131 (November, 1970).

48
17. Thurber, W. R. , and Smith, L. M. , Incremental Sheet Resistance, Bullis,

W. M. , Ed., Semioonduatov Measurement Teahnology , NBS Spec. Publ . 400-12

(May, 1975) p. 6.

18. Kelley, F. R. , Mattis, R. L., and Buehler, M. G., Metal-to-Base Contact

Resistor Study, Semiconductor Measurement Technology , Bullis, W. M. , Ed.,

NBS Spec. Publ. 400-1 (March, 1974) pp. 22-25.

19. Crosthwait, D. L. , Jr., Ghate , P. B., and Smith., D. M. , Screening of

Metallization Step Coverage on Integrated Circuits, llth Annual Proceedings, Reliability Physios 1973, pp. 254-260, IEEE Catalog No. 73 CHO

755-9 PHY.

20. Brooks, R. D. , and Mattes, H. G. , Spreading Resistance Between Constant

Potential Surfaces, Bell System Tech. J. 5_0, 775-784 (1971).

21. Foxhall, G. F. , and Lewis, J. A., The Resistance of an Infinite Slab with

a Disk Electrode, Bell System Tech. J. 4_3, 1609-1617 (1964).

22. Bilotti, A. A., Static Temperature Distribution in IC Chips with Isothermal Heat Sources, IEEE Trans, on Electron Devices ED-21 , 217-226 (1974).

23. Scott, W. T. , The Physios of Electricity and Magnetism, pp. 88-89 (John

Wiley, New York, 1959).

24. Uhlir, A., Jr., The Potentials of Infinite Systems of Sources and Numerical Solutions of Problems in Semiconductor Engineering, Bell System Tech.

J. 3£, 105-128 (1955).

25. Buehler, M. G. , and Thurber, W. R. , A Planar Four-Probe Bulk Resistivity

Test Structure, accepted for publication in IEEE Trans, on Electron

Devices (August, 1976).

26. Chwang, R. , Smith, B. J., and Crowell, C. R. , Contact Size Effects on the van der Pauw Method for Resistivity and Hall Coefficient Measurements,

Solid-state Electronics 17_, 1217-1227 (1974).

27. Grove, A. S., Physics and Technology of Semiconductor Devices , p. 350

(John Wiley, New York, 1967).

28. Mattis, R. L. , and Buehler, M. G. , Semiconductor Measurement Technology:

A BASIC Program for Calculating Dopant Density Profiles from CapacitanceVoltage Data, NBS Spec. Publ. 400-11 (June, 1975).

29. Wu, C. P., Douglas, E. C, and Mueller, C. W. , Limitations of the C-V

Technique for Ion-Implanted Profiles, IEEE Trans, on Electron Devices

ED-22 , 319-329 (1975).

30. Aiken, J. G., The Bipolar Tetrode as a Process Control Tool, Semiconductor

Silicon 1973, H. R. Huff and R. R. Burgess, Eds., 759-768 (Electrochemical

Society, Princeton, N. J., 1973).

31. Penney, W. M. , and Lau , L., Eds., MOS Integrated Circuits , p. 80 (van

Nostrand Reinhold Company, New York, 1972).

32. Kern, W. , and Puotinen, D. A., Cleaning Solutions Based on Hydrogen

Peroxide for Use in Silicon Semiconductor Technology, RCA Review 31 , 187-206 (1970).

49
I
NBS-I14A (REV. 7-73)

U.S. DEPT. OF COMM. BIBLIOGRAPHIC DATA

SHEET

1. puulk ation or ri- i^ort no. Special Publication 400-22

2. Ciov't Accession

No.

3. Recipient's Accession Nt;.

4. TITLE AND SUBTITLE

Semiconductor Measurement Technology: Microelectronic

Test Pattern NBS-3 for Evaluating the Resistivity-Dopant

Density Relationship of Silicon

J. Publication iJate June 1976

6. Performing Organization (^ode

7. AUTHOR(S)

Martin G. Buehler

8. Performing Organ. Report No.

9. PERFORMING ORGANIZATION NAME AND ADDRESS

NATIONAL BUREAU OF STANDARDS

DEPARTMENT OF rOMMFRTE

WASHINGTON, D.C. 20234

10. Project/Task/Work Un.t No. 4258411

11. Contract/Grant No. ARPA

Order 2397, Pgm. Code 4D10;

SSPO IPR SP-75-4; DNA

iMUrxU / 0 — O 1 D . 13. Type of Report & Period Covered

14. Sponsoring Agency Code

12. Sponsoring Organization Name and Complete Address (Street, City, State, ZIP)

NBS - Washington, D. C. 20234

DNA - Washington, D. C. 20305

ARPA - 1400 Wilson Blvd. , Arlington, Virginia 22209

SSPO - Dept. of Navy, Washington, D. C. 20376

15. SUPPLEMENTARY NOTES

Library of Congress Catalog Card Number: 76- 600032

16. ABSTRACT (A 200-word or less tactual summary ol most sigriilicanl information. If document includes a significant bibliography or literature survey, mention it here.) Test pattern NBS-3 is a microelectronic test vehicle designed by the National Bureau

j of Standards to evaluate the electronic materials used in discrete semiconductor devices

j and integrated circuits. Designed for fabrication on silicon wafers, the test pattern

is an aid in better understanding integrated circuit fabrication technologies. The main

pattern consists of four masks designated BASE, EMITTER, CONTACT, and METAL and contains

33 test structures such as sheet resistors, MOS capacitors, p-n junctions, bipolar and

I MOS transistors, and etch control and resolution structures.

The pattern was designed primarily to aid in the evaluation of the relationship

! between resistivity and dopant density in both n- and p-type silicon. This relation

' is needed in the design of silicon solid-state devices and in the analysis of various

physical measurements. Other test structures are included for use as diagnostic tools

to verify that proper fabrication procedures were followed. The remaining structures

allow the exploration of new designs and measurement methods.

The structures are arranged in a square pattern 200 mil (5.08 mm) on a side. A detailed layout of each test structure is presented including both a top view and a

I cross sectional view. A description of each structure is given and where applicable

! the formulas for evaluating such quantities as resistivity, dopant density, and sheet

I resistance are given. The fabrication of the test pattern is illustrated by an n-p-n

transistor process and values obtained from various test structures are presented.

17. KEY WORDS (six to twelve entries; alphabetical order; capitalize only the first letter of the first key word unless a proper name; separated by semicolons

)

Dopant density, microelectronics; MOS capacitors; n-p-n transistor fabrication;

p-n junctions; resistivity; semiconductor electronics; sheet resistors; silicon;

test pattern; test structures,

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