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PUBLICATIONS

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/Semiconductor measurement technology : QC100 .U56 NO.87-3522 VI 987 C.2 NBS-PUB- Semiconductor Measurement

Technology: A Bibliography of

NBS Publications for the Years

1962-1986

Edited by: Jane Waiters

U.S. DEPARTMENT OF COMMERCE

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

Semiconductor Electronics Division

Gaithersburg, MD 20899

February 1987

U.S. DEPARTMENT OF COMMERCE

MATiriMAi BUREAU OF STANDARDS

QC

100

. 1)56

87-3522

1987

c.2

NBSIR 87-3522

SEMICONDUCTOR MEASUREMENT

TECHNOLOGY: A BIBLIOGRAPHY OF

NBS PUBLICATIONS FOR THE YEARS

1962-1986

NBS

RESEARCH

INFORMATION CENTER N

QUfOO

CiSti*

?h » iS ?”

Edited by: Jane Walters

U.S. DEPARTMENT OF COMMERCE

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

Semiconductor Electronics Division

Gaithersburg, MD 20899

February 1987

U.S. DEPARTMENT OF COMMERCE, Malcolm Baldrige, Secretary

NATIONAL BUREAU OF STANDARDS, Ernest Ambler, Director

SEMICONDUCTOR MEASUREMENT TECHNOLOGY

Publications for the Years 1962-1986

Table of Contents

Page

Introduction ................................ 1 How t© Obtain Listed Publications ...................... 2

Progress Briefs 2

Videotapes ................................ 2

Progress Reports .............................. 3

Publications for the Year

1986 ........ . ........................ 6

1985 ................................. 10

1984 ................................. 14

1983 ............................ 18

1982 ......................... ... 22

1981 ................................. 26

1980 ................................. 31

1979 ..... ....................... 36

1978 ................................. 41

1977 ................. . ... 47

1976 ......................... ... 52

1975 ................................. 56

1974 ........................ 58

1973 ................................. 59

1972 ................... ........ 60

1971 ......................... 61

1970 . 62

1969 ..................... ... 63

1968 . 64

m
1967 65

1966 .

1965 .

1964 .

1963 .

1962 . Author Index

Topic Index

. 66

. 67

. 68

. 69

. 70

. 71

. 83

iv
SEMICONDUCTOR MEASUREMENT TECHNOLOGY;

LIST OF PUBLICATIONS - 1962-1986

Introduction

This list of publications contains reports of work performed at the National Bureau of

Standards (NBS) in the field of Semiconductor Measurement Technology. The publications

are grouped by author in a given year, with the current year appearing first in the listing.

An index by topic area is provided. Each topic is followed by year and reference number

of the appropriate publication. For the reader’s convenience, a list by author is also given.

Most of the publications listed herein resulted from work carried out as part of the NBS

Semiconductor Technology Program (STP). This Program serves to focus NBS research

on improved measurement technology for the use of the semiconductor device community

in specifying materials, equipment, and devices in national and international commerce,

and in monitoring and controlling device fabrication and assembly. This research leads

to carefully evaluated, well-documented measurement methods, data, reference artifacts,

models and theory, and associated technology which when applied by the industry are expected to contribute to higher yields, lower cost, and higher reliability of semiconductor devices and to provide a basis for controlled improvements in fabrication processes

and device performance. By providing a common basis for the purchase specifications of

government agencies, improved measurement technology also leads to greater economy in

government procurement. Financial support of the Program is provided by a variety of

Federal agencies; sponsorship is acknowledged in each report.

The work of the Semiconductor Technology Program is carried out by the Semiconductor

Electronics Division (formerly the Semiconductor Materials & Processes and the Semiconductor Devices & Circuits Divisions). Inquiries regarding the work of the Division should

be directed to Frank F. Oettinger, Division Chief, Room B344, Technology Building, National Bureau of Standards, Gaithersburg, MD 20899.

The linewidth metrology work, formerly a part of the Semiconductor Materials & Processes

Division, is now part of the Precision Engineering Division of the Center for Manufacturing Engineering, although those publications that pertain to the semiconductor industry

still appear in this report. Detailed inquiries may be made to Robert D. Larrabee, Group

Leader, Linewidth Metrology, Room A331, Technology Building, National Bureau of Standards, Gaithersburg, MD 20899.

Page 1
How to Obtain Listed Publications

In most cases, reprints of articles in technical journals may be obtained on request to

the author or to the above address. Copies of most NBS Technical Notes and Special

Publications, NBS Interagency Reports (NBSIR Series), NBS Grant-Contract Reports

(NBS-GCR Series), and other Government reports may be ordered through the National

Technical Information Service (NTIS), U„S. Department of Commerce, Springfield, VA

22161; or from the Government Printing Office (GPO), Superintendent of Documents,

TLS. Government Printing Office, Washington, DC 20402. Current price information may

be obtained from the NTIS Order Desk, (703) 487-4650 or from the GPO Order and

Inquiry Section, (202) 783-3238.

Progress Briefs

Progress Briefs have been issued in the NBSIR Series to describe the work in the Semiconductor Technology Program on a periodic basis and also to list new reports as they

become available. The Center for Electronics and Electrical Engineering (CEEE) continues to publish such material in a Center-wide publication, CEEE Technical Progress

Bulletin. All individuals on the present Progress Briefs mailing list will continue to receive

issues In that series. Requests to have names placed on this list should be sent to: Mr. J. F. Mayo-Wells, CEEE, Room B358, Metrology Building, National Bureau of Standards,

Gaithersburg, MD 20899, telephone: (301) 975-2220.

Videotapes

The videotape on Safe Operating Area Limits for Power Transistors, by David L. Blackbum, continues to be available. Address requests to the author, Room B310, Technology

Building, for a copy of the tape and NBS Special Publication 400-44 (issued September

1977), the videotape script.

Also available is the videotape on Laser Scanning of Active Semiconductor Devices. Contact David W. Beming, Room B310, Technology Building, concerning a copy of the videotape and NBS Special Publication 400-27 (issued February 1976).

Page 2
PROGRESS REPORTS

Comprehensive progress reports covering the period July 1, 1968 through June 30, 1973 were published as NBS Technical Notes with the title, Methods of Measurement for Semiconductor Materials, Process Control, and Devices:

QUARTER ENDING NBS TECHNICAL NOTE DATE ISSUED

September 30, 1968 472 Dec 1968

December 31, 1968 475 Feb 1969

March 31, 1969 488 Jul 1969

June 30, 1969 495 Sep 1969

September 30, 1969 520 Mar 1970

December 31, 1969 527 May 1970

March 31, 1970 555 Sep 1970

June 30, 1970 560 Nov 1970

September 30, 1970 571 Apr 1971

December 31, 1970 592 Aug 1971

March 31, 1971 598 Oct 1971

June 30, 1971 702 Nov 1971

September 30, 1971 717 Apr 1972

December 31, 1971 727 Jun 1972

March 31, 1972 733 Sep 1972

June 30, 1972 743 Dec 1972

September 30, 1972 754 Mar 1973

December 31, 1972 773 Jun 1973

March 31, 1973 788 Aug 1973

June 30, 1973 806 Nov 1973

Between July 1, 1973 and September 30, 1977, comprehensive progress reports were issued

in the NBS Special Publication 400- subseries with the title, Semiconductor Measurement

Technology:

QUARTER ENDING NBS SPECIAL PUBLICATION DATE ISSUED

September 30, 1973 400-1 Mar 1974

December 31, 1973 400-4 Nov 1974

March 31, 1974

June 30, 1974 400-8 Feb 1975

September 30, 1974 400-12 May 1975

December 31, 1974 400-17 Nov 1975

March 31, 1975 400-19 Apr 1976

June 30, 1975

September 30, 1975 400-25 Oct 1976

December 31, 1975
QUARTER ENDING NBS SPECIAL PUBLICATION DATE ISSUED

March 31, 1976 400-29 Apr 1977

June 30, 1976

September 30, 1976 400-36 Jul 1978

December 31, 1976 400-38 Nov 1979

March 31, 1977

June 30, 1977 400-45 Aug 1980

September 30, 1977

After October 1, 1977, brief progress reports were issued as conductor Technology Program, Progress Briefs:NBSXRs with the title, SemiQUARTER ENDING NBSXR DATE ISSUED

December 31, 1977 78-1444 Mar 1978

March 31, 1978 78-1444-2 Jul 1978

June 30, 1978 78-1444-3 Oct 1978

September 30, 1978 79-1591 Jan 1979

December 31, 1978 79-1591-2 Mar 1979

March 31, 1979 79-1591-3 Jun 1979

June 30, 1979 79-1591-4 Aug 1979

September 30, 1979 79-1591-5 Dec 1979

December 31, 1979 80-2006 Apr 1980

March 31, 1980 80-2006-2 Jun 1980

June 30, 1980 80-2006-3 Oct 1980

September 30, 1980 80-2006-4 Dec 1980

December 31, 1980 81-2230 Mar 1981

March 31, 1981 81-2230-2 Jul 1981

June 30, 1981 81-2230-3 Oct 1981

July 1, 1981 83-2636 Jan 1983

September 30, 1982

The Center for Electronics and Electrical Engineering Technical Progress Bulletins (TPB),

which appeared after October 1, 1982, contain abstracts of recent publications, and of those

to be published, covering work of the Semiconductor Technology Program as well as that

of the Signals and Systems Metrology Program.

QUARTER ENDING NBSXR DATE ISSUED

December 31, 1982 83-2719-3 Jul 1983

March 31, 1983 84-2857-1 Mar 1984

June 30, 1983 84-2857-2 Apr 1984

September 30, 1983 84-2857-3 Apr 1984

December 31, 1983 84-2857-4 Apr 1984

March 31, 1984 84-2877-1 May 1984

Page 4
QUARTER ENDING NBSIR DATE ISSUED

June 30, 1984 84-2877-2 Jul 1984

September 30, 1984 84-2877-3 Dec 1984

December 31, 1984 85-3181 Jun 1985

March 31, 1985 85-3181-2 Aug 1985

June 30, 1985 85-3181-3 Dec 1985

September 30, 1985 86-3344 Mar 1986

December 30, 1985 86-3344-2 Jun 1986

March 31, 1986 86-3449 Sep 1986
Publications for the Year 1986

1. Baghdadi, A., Measurement of the Oxygen and Carbon Content of Silicon Wafers by

Fourier Transform Spectrophotometry, American Chemical Society Symposium Series

295, Inorganic Materials Characterization, L.A. Casper, Ed., pp. 208-229 (1986).

2. Baghdadi, A., Gladden, W. K., and Flach, D. R., Nonlinear’ Effects of Digitizer Errors

in FT-IR Spectroscopy, Appl. Spectrosc. 40 (5), 617-628 (1986).

3. Bennett, H. S., Band Structure and Density of States Changes in Heavily Doped

Silicon, J. Appl. Phys. 59 (8), 2837-2844 (1986).

4. Bennett, H. S., High Dopant and Carrier Concentration Effects in Gallium Arsenide:

Band Structure and Effective Intrinsic Carrier Concentrations, J. Appl. Phys. 60 (8),

2866-2874 (1986).

5. Bennett, H. S., Device Physics for Modeling GaAs Bipolar Transistors, Proc. SRC

Conference on Bipolar Device Technology, Tempe, AZ, Apr. 24-25, 1986, Paper H.17,

S.A. Abbas, Ed., (1986).

6. Bennett, H. S., Gaitan, M., Roitman, P., Russell, T. J., and Suehle, J. S., Modeling MOS Capacitors to Extract Si-Si02 Interface Trap Densities in the Presence

of Arbitrary Silicon Doping Profiles, IEEE Trans. Electron Devices ED-33, 759-765

(1986).

7. Berning, D. W., and Blackburn, D. L., Power MOSFET Failure During Turn-Off: The

Effect of Forward Biasing the Drain-Source Diode, Conf. Proc. 1986 IEEE Industrial

Applications Society Annual Meeting, Denver, CO, Sept. 25-Oct. 3, 1986, pp. 335-339

(1986).

8. Bullis, W. M., Watanabe, M., Baghdadi, A., Yue-zhen, L., Scace, R. I., Series, R. W.,

and Stallhofer, P., Calibration of Infrared Absorption Measurements of Interstitial

Oxygen Concentration in Silicon, Proc. Electrochemical Society Silicon Symposium,

Boston, MA, May 4-9, 1986, 86-1, p. 196 (1986).

9. Candela, G. A., Chandler-Horowitz, D., Novotny, D. B., Vorburger, T., and Giauque,

G. H., Film Thickness and Refractive Index Standard Reference Material Calibrated

by Ellipsometry and Profilometry, Proc. Soc. Photo-Optical Instrum. Engrs., 661,

Optical Testing & Metrology, 402-407 (1986).

10. Chandler-Horowitz, D., Semiconductor Measurement Technology: Analytic Analysis

of Ellipsometric Errors, NBS Spec. Publ. 400-78 (1986).

11. Cresswell, M. W., Coleman, E. S., Pessall, N., Linholm, L. W., and Radack, D. J.,

An Expert System Approach to Enhanced VLSI/VHSXC Process Development, 1986

Government Microcircuit Applications Conf. Digest of Papers, San Diego, CA, Nov.
11-13, 1986, pp. 391-392 (1986).

12. Cresswell, M. W., Pessall, N., Linholm, L. W., and Radack, D. J., The Use of Artificial

Intelligence and Microelectronic Test Structures for Evaluation and Yield Enhancement of Microelectronic Interconnect Systems, Proc. Third Int. IEEE VLSI Multilevel

Interconnection Conf., Santa Clara, CA, June 9-11, 1986, pp. 331-340 (1986).

13. Dodge, M., Refractive Index. CRC Handbook of Laser Science and Technology, Optical Materials, Part 2, Vol. IV, M. J. Weber, Ed., pp. 21-47 (CRC Press, Boca Raton,

FL, 1986).

14. Ellenwood, C. H., and Mattis, R. L., Release Notes for STAT2 Version 2.00A: An

Addendum to NBS Special Publication 400=75, NBSIR 85-3292 (1986).

15. Hefner, A. R., and Blackburn, D. L., Performance Trade-Off for the Insulated Gate

Bipolar Transistor: Buffer Layer Versus Base Lifetime Reduction, PESC ’86 Record,

17th Annual IEEE Power Electronics Specialists Conf. Vancouver, BC, June 23, 1986,

pp. 27-38 (1986).

16. Hefner, A. R., Blackburn, D. L., and Galloway, K. F., The Effect of Neutrons on the

Characteristics of the Insulated Gate Bipolar Transistor (IGBT), IEEE Trans. Nucl.

Sci. NS-33, 1428-1434 (1986).

17. Larrabee, R. D., and Bell, M. I., Nondestructive Evaluation Activities in the Semiconductor Materials and Processes Division, NBSIR 86-3495 (1986).

18. Lowney, J. R., Impurity Bands and Band Tailing in Moderately Doped Silicon, J. Appl. Phys. 59 (6), 2048-2053 (1986).

19. Lowney, J. R., Impurity Bands and Band Tailing in n-Type GaAs, J. Appl. Phys. 60

(8), 2854-2859 (1986).

20. Ma, Y., Stem, E. A., and Bouldin, C. E., The Structural Unit in Icosahedral MnAlSi

and MnAl, Phys. Rev. Lett. 57 (13), 1611-1614 (1986).

21. Mattis, R. L., Release Notes for STAT2 Version 1.7; An Addendum to NBS Special

Publication 400-75, NBSIR 86-3333 (1986).

22. Mazer, J. A., and Ehrstein, J. R., Effect of Sintering on the Sheet Resistance Directly

Under an Aluminum/Silicon Ohmic Contact, Proc. Electrochemical Society Silicon

Symposium, Boston, MA, May 4-9, 1986, 86-1, pp. 396-397 (1986).

23. Mountain, D. J., Russell, T. J., and Galloway, K. F., Effect of Post-Oxidation Anneal

on Electrical Characterization of Thin Oxides, Proc. Electrochemical Society Silicon

Symposium, Boston, MA, May 4-9, 1986, 86-1, pp. 382-383 (1986).

24. Novotny, D. B., Measurement of the Separation Distance in Contact and Proximity

Lithography, J. Electrochem. Soc. 133, 2600-2605 (1986).
1986

25. Nyyssonen, D., Procedure for Calibration of Ferrite Gaps in Magnetic Tape Heads

Traceable to NBS AR-Chromium Optical Linewidth SRMs, NBSIR 86-3306 (1986).

26. Nyyssonen, D., Linewidth Calibration for Bright-Chromium Photomasks, NBSIR 86-

3357 (1986).

27. O’Keefe, T. W., Cresswell, M. W., Linholm, L. W., and Radack, D. J., Evaluation and

Improvement of E-Beam Exposure Routines by Use of Microelectronic Test Structures,

Ext. Abs. Digest of IEEE VLSI Workshop on Test Structures, Long Beach, CA, Feb.

17=18, 1986, pp. 82-94 (1986).

28© Oettinger, F© F., Thermal Characterization of Integrated Circuits - A Tutorial, Proc.

Semiconductor Thermal is Temperature Measurement Symp., Scottsdale, AZ, Dec.

9=11, 1986, T2-1 - T2-4 (1986).

29. Postek, M. T„, Electron Detection Modes and Their Relation to Linewidth Measurement in the Scanning Electron Microscope, Proc. 44th Annual Meeting, Electron

Microscopy Soc. of America, Albuquerque, NM, Aug. 10-15, 1986, pp. 646-649

(1986).

30. Postek, M. T., and Joy, D. C., Microelectronics Dimensional Metrology in the Scanning Electron Microscope, Part I (November issue), Solid State Technology, 145=150

(1986).

31. Postek, M. T., and Joy, D. G., Microelectronics Dimensional Metrology in the Scanning Electron Microscope, Part II (December issue), Solid State Technology, 77-85

(1986).

32. Pugh, R. D., Johnston, A. H., and Galloway, K. F., Characteristics of the Breakdown

Voltage of Power MOSFETs After Total Dose Irradiation, IEEE Trans. Nucl. Sci.

NS-33, 1460-1464 (1986).

33. Radack, D. J., and Linholm, L. W., The Application of Microelectronic Test Structures

for Propagation Delay, Ext. Abs. Digest IEEE VLSI Workshop on Test Structures,

Long Beach, CA, Feb. 17-18, 1986, pp. 191-207 (1986).

34. Roitman, P., Suehle, J. S., Russell, T. J., and Gaitan, M., On the Measurement of

Capacitance on Wafers, Ext. Abs. Digest IEEE VLSI Workshop on Test Structures,

Long Beach, CA, Feb. 17-18, 1986, pp. 96-104 (1986).

35. Russell, T. J., Bennett, H. S., Gaitan, M., Suehle, J. S., and Roitman, P., Correlation

Between CMOS Transistor and Capacitor Measurements of Interface Trap Spectra,

IEEE Trans. Nucl. Sci. NS-33, 1228-1233 (1986).

36. Schafft, H. A., Grant, T., Mandel, J., and Shott, J., Report on an Interlaboratory

Electromigration Experiment, Ext. Abs. Digest IEEE VLSI Workshop on Test Structures, Long Beach, CA, Feb. 17-18, 1986, pp. 306-325 (1986).

Page 8
1986

37. Schafft, H. A., and Saxena, A. N., Electromigration Test Methodology and Characterization, Proc. Third IBM Symp. on Electromigration, Poughkeepsie, NY, Apr. 1-2.

1985, unpaged (1986).

38. Singh, G., Galloway, K. F., and Russell, T. J„, Radiation-Induced Interface Traps in

Power MOSFETs, IEEE Trans. Nucl. Sci. NS-33, 1454-1459 (1986).

39. Stern, E. A., Ma, Y., and Bouldin, C. E., Answer to Comment by M. A. Marcus

Concerning “Local Structure at Mn Sites in Icosahedral Mn-Al Quasicrystals,” Phys.

Rev. Lett. 57 (13), 1659 (1986).

40. Wachnik, R. A., The Use of Charge Pumping to Characterize Generation by Interface

Traps, IEEE Trans. Electron Devices ED-33, 1054-1061 (1986).

41. Wachnik, R. A., and Lowney, J. R., A Model for the Charge-Pumping Current Based

on Small Rectangular Voltage Pulses, Solid-State Electron. 29 (4), 447-460 (1986).

42. Wunder, S. L., Bell, M. I., and Zerbi, G., Band Broadening of CH2 Vibrations in the

Raman Spectra of Polymethylene Chains, J. Chem. Phys. 85 (7), 3827-3839 (1986).

Page 9
Publications for the Year 1985

1. Albers, J., Monte Carlo Calculation of One- and Two-Dimensional Particle and Damage Distributions for Ion-Implanted Dopants in Silicon, IEEE Trans. Computer-Aided

Design CAD-4, 374-383 (1985).

2. Albers, J., Monte Carlo Calculation of One- and Two-Dimensional Particle and Damage Distributions for Ion-Implanted Dopants in Silicon, IEEE Trams. Electron Devices

ED-32, 1930-1939 (1985).

3. Albers, J., and Berkowitz, EL L., An Alternative Approach to the Calculation of

Four-Probe Resistances on Nonuniform Surfaces, J. Electrochem. Soc. 132, 2453-

245© (1985).

4. Baghdadi, A., Comments on “Precise Evaluation of Oxygen Measurements on CzSilicon Wafers,” J. Electrochem. Soc. 132, §10 (1985).

5. Baghdadi, A., and Gladden, W. K., ADC Errors in Quantitative FT-XR Spectroscopy,

Proc. Soc. Photo-Optical & lustrum. Engrs., Fourier and Computerized IR Spectroscopy 553, 207-209 (1985).

©. Bennett, H. S., Modeling GaAs/AlGaAs Devices: A Critical Review, IEEE Circuits

and Devices Magazine 1, 35-42 (1985).

7. Bennett, H. S., Band Structure and Density of States Changes for Doped Gallium

Arsenide, OM85 Basic Properties of Optical Materials, Summaries of Papers [Conf.

May 7-9, Gaithersburg, MD], NBS Spec. Publ. 697 (1985).

8. Bennett, H. S., Heavy Doping Effects on Bandgaps, Effective Intrinsic Carrier Concentrations, and Carrier Mobilities and Lifetime, Solid State Electronics 28, 193-200

(1985).

9. Bennett, H. S., and Fuoss, D. E., Improved Physics for Simulating Submicron Bipolar

Devices, IEEE Trans. Computer-Aided Design CAD-4, 513-522 (1985).

10. Bennett, H S., and Fuoss, D. E., Improved Physics for Simulating Submicron Bipolar

Devices, IEEE Trans. Electron Devices ED-32, 2069-2078 (1985).

11. Blackburn, D. L., Turn-Off Failure of Power MOSFETs, Proc. 16th Annual Power

Electronics Specialists Conf., Toulouse, France, June 24-28, 1985, pp. 429-435 (1985).

12. Chandler-Horowitz, D., Ellipsometric Metrology of Ultrathin Films: Dual Angle of

Incidence, Proc. Soc. Photo-Optical & Instrum. Engrs., Micron and Submicron

Integrated Circuit Metrology 565, 93-97 (1985).

13. Ehrstein, J. R., Preparation and Certification of SRMs for Calibration of Spreading

Resistance Probes, NBS Spec. Publ. 260-93 (1985).
1985

14. Forman, R. A., Bell, M. I., and Mayo, S., Rapid X-Ray Topographic Examination of

GaAs Crystals, Proc. Int. Symp. on Defect Recognition & Image Processing in III-V

Compounds, Montpellier, France, July 2-4, 1985, pp. 55-62 (1985).

15. Forman, R. A., Bell, M. L, Myers, D. R., and Chandler-Horowitz , D., The Raman

Spectrum of Carbon in Silicon, Jap. J. Applied Physics 24, L848-L85Q (1985).

16. Forman, R. A., and Mayo, S. s In Situ Alignment for X-Ray Topography, J. AppL

Crystallography 18, 106-109 (1985).

17. Galloway, K. F., Wilson, C. L., and Witte, L. C., Charge-Sheet Model Fitting to

Extract Radiation-Induced Oxide and Interface Charge, IEEE Trans. Nucl. Sci. NS32, 4461-4465 (1985).

18. Galloway, K. F., Wilson, C. L., and Witte, L. C., MOSFET Electrical Parameter Extraction from Charge-Sheet Model Fitting, Proc. Sixth Biennial University/ Government/Industry Microelectronics Symposium, Auburn, AL, June 11-13, 1985, pp. 77-

81 (1985).

19. Imhoff, E. A., Bell, M. I., and Forman, R. A., Hot Photoluminescence in BerylliumDoped Gallium Arsenide, Solid State Communications 54, 845-848 (1985).

20. Kirk, C. P., and Nyyssonen, D., Modeling the Optical Microscope Images of Thick

Layers for the Purpose of Linewidth Measurement, Proc. Soc. Photo-Optical Instrum.

Engrs., Optical Microlithography IV 538, 179-187 (1985).

21. Lie, L., Pramanik, D., Saxena, A. N., Mazer, J. A., and Linholm, L. W., Contact Resistance of Al-l%Si-0.5%Cu and Al/TiW/PtSi Metallization, Proc. 1985 IEEE VLSI

Multilevel Interconnection Conf., Santa Clara, CA, June 24-26, 1985, pp. 201-210

(1985).

22. Linholm, L. W., Cresswell, M. W., Coleman, E. S., and Partlow, W. D., Design, Fabrication, and Testing of an Interconnect Test Structure for Evaluating VLSI Processes,

1985 Government Microcircuit Applications Conf. Digest of Papers, Orlando, FL,

Nov. 5-7, 1985, pp. 359-360 (1985).

23. Linholm, L. W., Mazer, J. A., and Galloway, K. F„, Characterizing VLSI Processes

Using Test Structures, Digest of the DoD/NBS Conf. on Microelectronic Electromagnetic Susceptibility, Gaithersburg, MD, Mar. 12-13, 1985, pp. 16-18 (1985).

24. Linholm, L. W., Yen, D., and Cresswell, M. W., Electrical Linewidth Measurement in

the Near- and Sub-Micron Linewidth Region, Proc. Third Int. ECS Symp. on VLSI

Sci. & Tech., Toronto, Ontario, May 12-17, 1985, pp. 299-308 (1985).

25. Lowney, J. R., Band-Gap Narrowing in the Space-Charge Region of Heavily Doped

Silicon Diodes, Solid State Electronics 28, 187-191 (1985).

'

26. Marchiando, J. F., Roitman, P., and Albers, J., Boron Diffusion in Silicon, IEEE

Page 11
1985

Trails. Electron Devices ED-32, 2322-2330 (1985).

27. Mayo, S., Lowney, J. R., and Bell, M. I., Evidence of Lattice Relaxation in PlatinumDoped Silicon, Proc. Materials Research Society Spring Meeting, San Francisco, CA,

April 1985, 46, pp. 297-306 (1985).

28. Mazer, J. A., Linholm, L. W., and Saxena, A. N., An Improved Test Structure and

Keivin-Measurement Method for the Determination of Integrated Circuit Front Contact Resistance, J. Electrochem. Soc. 132, 440-443 (1985).

29. Nyyssonen, D., Focused-Beamvs. Conventional Bright-Field Scanning Microscopy for

Integrated Circuit Metrology, Proc. Soc. Photo-Optical & Instrum. Engrs., Micron

and Submicron IC Metrology 565, 102-107 (1985).

30. Nyyssonen, D., A Practical Method for Edge Detection and Focusing for Linewidth

Measurements on Wafers, Proc. Soc. Photo-Optical Instrum. Engrs., Optical Microlithography IV 538, 172-178 (1985).

31. Nyyssonen, D., and Postek, M. T., SEM-Based System for Calibration of Linewidth

SRMs for the IC Industry, Proc. Soc. Photo-Optical & Instrum. Engrs., Micron and

Submicron IC Metrology 565, 180-186 (1985).

32. Oettinger, F. F., Thermal Measurements of VLSI Packages - A Critical Overview,

Abstracts of the IEEE/VLSI Packaging Workshop, Gaithersburg, MD, September

9-11, 1985, pp. 26-29 (1985).

33. Radack, D. J., Yao, C. T., Linholm, L. W., Galloway, K. F., and Lin, H. C., Comparison of Microelectronic Test Structures for Propagation Delay Measurements, Microelectronics Journal 16(6), 39-46 (1985).

34. Roenker, K. P., Earner, F. L., and Linholm, L. W., An NMOS Test Chip for Instruction in Semiconductor Parameter Measurements, Proc. 6th Biennial Univ/Govt/Industry

Microelectronics Symp., Auburn, AL, June 11-13, 1985, pp. 100-105 (1985).

35. Roitman, P., Wilson, C. L., Blue, J. L., and Galloway, K. F., Measurements for Accurate MOS Transistor Simulation, Proc. 3rd Int. Workshop, Physics of Semiconductor

Devices, Delhi, India, Nov. 1985, pp. 69-77 (1985).

36. Sehafft, H. A., Standards for Electromigration Testing, Final Report, 1984 Wafer

Reliability Assessment Workshop, Lake Tahoe, CA, Sept. 20-Oct. 3, 1984, pp. 91-

106 (1985).

37. Sehafft, H. A., Grant, T« G., Saxena, A. N., and Kao, C. Y., Electromigration and

the Current-Density Dependence, Proc. 23d Annual Inter. Reliability Physics Symp.,

Orlando, FL, Mar. 26-28, 1985, pp. 93-99 (1985).

38. Stem, E. A., Ma, Y., and Bouldin, C. E., The Local Structure at Mn Sites in Icosahedral Mn-Al Quasicrystals, Phys. Rev. Lett. 55(20), 2172-2175 (1985).

Page 12
1985

39. Thurber, W. R., and Lowney, J. R., Electrical Transport Properties of Silicon. VLSI

Handbook, Chapter 14 N. G. Einspmch Ed., pp. 177-190 (Academic Press, New York,

NY, 1985).

40. Wilson, G. L., Using Silicon Device Modeling Techniques for GaAs Devices, Tech.

Digest, 1985 Xnt. Electron Devices Meeting, Washington, DC, Dec. 1-4, 1985, pp.

78-81 (1985).

41. Wilson, C. L», and Blue, J. L., Accurate Current Calculation in Two-Dimensional

MOSFET Models, IEEE Trans. Computer-Aided Design CAD-4, 504-512 (1985).

42. Wilson, C. L., and Blue, J. L., Accurate Current Calculation in Two-Dimensional

MOSFET Models, IEEE Trans. Electron Devices ED-32, 2060-2068 (1985).

43. Wilson, C. L., and Blue, J. L«, Semiconductor Measurement Technology: MOS1: A

Program for Two-Dimensional Analysis of Si MOSFETs, NBS Spec. Publ. 400-77

(1985).

44. Wilson, C. L., Roitman, P., and Blue, J. L., High Accuracy Physical Modeling of

Submicron MOSFETs, IEEE Trans. Electron Devices ED-32, 1246-1258 (1985).

45. Wilson, C. L., and Russell, T. J., Two-Dimensional Modeling of Channel Hot-Electron

Effects in Silicon MOSFETs, Tech. Digest, 1985 Int. Electron Devices Meeting,

Washington, DC, Dec. 1-4, 1985, pp. 72-75 (1985).

46. Witte, L. C., CSFIT: A FORTRAN Program for Charge-Sheet Model Fitting of MOSFET Data, NBSIR 85-3145 (1985).

47. Yen, D., Glendinning, W. B., and Linholm, L. W., An Electrical Test Structure and

Proximity Effects Measurement and Correction, J. Electrochem. Soc. 132, 1726-1729

(1985).

Page 13
Publications for the Year 1984

1. Albers, J., Semiconductor Measurement Technology: TXYZ: A Program for Semiconductor IC Thermal Analysis, NBS Spec. Publ. 400-76 (1984).

2. Albers, J., and Berkowitz, H. L., The Relation Between Two-Probe and Four-Probe

Resistances on Nonuniform Structures, J. Eleetrochem. Soc. 131, 392-398 (1984).

3. Albers, J., Wilson, C. L., and Blue, J. L., The Effect of Bevel Angle and Number

of Points on Spreading Resistance Bata Analysis, Ext. Abs. of the Electrochemical

Society, New Orleans, LA, Oct. 13-17, 1984, 84-2, p. 727 (1984).

4o Baghdadi, A., The Effects of Instrumental Artifacts on the Quantitative Determination of Oxygen in Silicon by FTXR, ASTM Special Technical Publication 850 (1984).

5. Bennett, EL S., Improved Device Physics for Calculating the Gain of Bipolar Structures in Silicon. The Physics of Submicron Structures E< L. Grubin, K. Hess, G. J. lafrate, and D. K. Ferry Eds., pp, 307-311 (Plenum Press, New York, NY, 1984).

6. Bennett, H. S., Comparison of Theoretical Empirical Lifetimes for Minority Carriers

in Heavily Doped Silicon, Solid-State Electronics 27, 893-904 (1984).

7. Bennett, H. S=, and Wilson, O. L., Statistical Comparisons of Data on Band-Gap

Narrowing in Heavily Doped Silicon: Electrical and Optical Measurements, J. Apph

Phys. 55, 3582-3587 (1984).

8. Berkowitz, H. L., and Albers, J., Simplified Method for Calculating Four-Probe Resistances on Nonuniform Surfaces, Ext. Abs. of the Electrochemical Society, New

Orleans, LA, Oct. 13-17, 1984, 84-2, p. 751 (1984).

9. Blackburn, D. L., and Beming, D. W., An Experimental Study of Reverse-Bias Second

Breakdown. Power Transistors: Device Design and Applications B. J. Baliga, and D.

Y. Chen Eds., pp. 55-59 (IEEE Press, New York, NY, 1984).

10. Blue, J. L., and Wilson, G. L., Numerical Methods for Solving Coupled Semiconductor

Equations on a Minicomputer, Elliptic Problem Solvers H, 521-530 (1984).

11. Brodfuehrer, B. P., Galloway, K. F., and Wilson, C. L., Comparison of Simple Approximations and Numerical Solutions for the Threshold Voltage of Ion-Implanted

Long-Channel MOSFETs, IEEE Trans. Education E-27, 3-6 (1984).

12. Candela, G. A., and Chandler-Horowitz, D., An Ellipsometry System for High Accuracy Metrology of Thin Films, Proc. Soc. Photo-Optical Instrum. Engrs., Integrated

Circuit Metrology II 480, 2-8 (1984).

13. Carver, G. P., and Wachnik, R. A., TERRY-2: A Test Chip for Characterization of

the Performance of Buried-Channel Charge-Coupled Device (CCD) Imagers, NBSIR
1984

84-2894 (1984).

14. Cassard, J. M., A Sensitivity Analysis of SPICE Parameters Using an Eleven-Stage

Ring Oscillator, IEEE J. Solid State Circuits SC-19, 130-135 (1984).

15. Cassard, J. M., A Sensitivity Analysis of SPICE Parameters Using an Eleven-Stage

Ring Oscillator, IEEE Trans. Electron Devices ED-31, 264-269 (1984).

16. Chang, T. T., The Calibration Methods and the Reference Materials in ESR Spectroscopy, Mag. Resonance Rev. 9 (1-3), 65-124 (1984).

17. Dodge, M. J., Refractive Properties of Magnesium Fluoride, AppL Opt. 23(12),

1980-1985 (1984).

18. Ehrstein, J. R., Downing, R. G., Stallard, B. R., Simons, D. S., and Fleming, R.

F., Comparison Depth Profiling of 10B in Silicon Using Spreading Resistance Profiling, Secondary Ion Mass Spectrometry, and Neutron Depth Profiling, ASTM Special

Technical Publication 850 (1984).

19. Forman, R. A., Bell, M. L, Mayo, S., and Kahn, A. H., Effect of Spatial Averaging on

the Compositional Analysis of Crystals by Absorption Spectroscopy, J. AppL Phys.

55, 547-554 (1984).

20. Forman, R. A., and Kratz, H. D., A Simple Vacuum Pump Exhaust Filter, Rev. Sci.

Instrum. 55, 1503 (1984).

21. Gaitan, M., and Russell, T. J., Measurement of Radiation-Induced Interface Traps

Using MOSFETs, IEEE Trans. Nucl. Sci. NS-31, 1256-1260 (1984).

22. Galloway, K. F., Measurements for VLSI Models, Proc. 2nd Int. Workshop on the

Physics of Semiconductor Devices, Delhi, India, Dec. 5-10, 1983, pp. 98-105 (1984).

23. Galloway, K. F., Gaitan, M., and Russell, T. J., A Simple Model for Separating

Interface and Oxide Charge Effects in MOS Device Characteristics, IEEE Trans. Nucl.

Sci. NS-31, 1497-1501 (1984).

24. Harman, G. G., The Microelectronic Bail-Bond Shear Test - A Critical Review and

Comprehensive Guide to Its Uses, Solid State Technology 27 (5), 186-197 (1984).

25. Hinkley, J. A., Adsorption of Polystyrene on Thermally Oxidized Silicon, Polymer

Preprints 25 (1), 178-179 (1984).

26. Hower, P. L., Blackburn, D. L., Oettinger, F. F., and Rubin, S., Stable Hot Spots

and Second Breakdown in Power Transistors. Power Transistors: Device Design and

Applications B. J. Baliga, and D. Y. Chen Eds., pp. 42-54 (IEEE Press, New York,

NY, 1984).

27. Kowalski, P., Lankford, W. F., and Sehafft, H. A., Nondestructive Measurement of

Solar Cell Sheet Resistance Using a Laser Scanner, IEEE Trans. Electron Devices

Page 15
1984

ED-31, 566-570 (1984).

28. Larrabee, R. D., Neutron Transmutation Doping of Semiconductor Materials, Preface

[Conference June 1-3, 1982], R. D. Larrabee, Ed., pp. vii-ix (Plenum Press, New York,

NY, 1984).

29. Lowney, J. R. s and Geist, J„, Comparison of Models of the Built-In Electric Field in

Silicon at High Donor Densities, J. Appl. Phys. 55, 3624-3627 (1984).

30. Lowney, J. R., and Thurber, W. R., Evidence of Band-Gap Narrowing in the SpaceCharge Layer of Heavily Doped Silicon Diodes, Electronics Letters 20(3), 142-143

(1984).

31. Mazer, J. A., and Linholm, L. W., Comments on “Determining Specific Contact Resistivity from Contact End Resistance Measurements,” IEEE Electron Devices Letters

EDL-5, 347-348 (1984).

32. Moore, B. A., and Ruthberg, S., RADC/NBS Workshop - Moisture Measurement and

Control for Semiconductor Devices, EEL NBSER 84-2852 (1984).

33. Nyyssonen, D., Optical Linewidth Measurement on Patterned Metal Layers, Proc.

Soe. Photo-Optical Instrum. Engrs., Integrated Circuit Metrology H 480, 65-70

(1984).

34. Nyyssonen, D., A Review of NBS’s Activities in the Area of Linewidth Measurement,

Summary, SAMA Conference: Future Trends in Optical Technologies in the Semiconductor Industry, May 23, 1983, Sunnyvale, CA, pp. 1-7 (1984).

35. Oettinger, F. F., Thermal Evaluation of VLSI Packages Using Test Chips - A Critical

Review, Solid State Technology 27 (2), 169-170 (1984).

36. Pande, K. P., and Seabaugh, A. G., Low Temperature Plasma-Enhanced Epitaxy of

GaAs, J. Electroehem. Soc. 131, 1357-1359 (1984).

37. Roenker, K. P., and Linholm, L. W., An NMOS Test Chip for a Course in Semiconductor Parameter Measurements, NBSIR 84-2822 (1984).

38. Roitman, P., Albers, J., and Myers, D. R., An Investigation of the Two-Dimensional

Shape of Ion-Implanted Regions, J. Appl. Phys. 55, 4436-4443 (1984).

39. Sehafft, H. A., Younkins, C, D., Grant, T. C., Kao, C. Y., and Saxena, A. N., Effect of

Passivation and Passivation Defects on Electromigration Failure in Aluminum Metallization, 22d Annual Proceedings, Reliability Physics 1984, Las Vegas, NY, April 3-5,

1984, pp. 250-255 (1984).

40. Seabaugh, A. C., Bell, M. L, Larrabee, R. D„, and Oliver, J. D., High-Frequency

Transient-Resistance Spectroscopy of Deep Levels in Semi-Insulated GaAs. SemiInsulating IH-V Materials: Kah-neeta 1984 D. C. Look, and J. S. Blakemore Eds., pp.

437-445 (Shiva Publishing, Ltd., Cheshire, England, 1984).

Page 16
1984

41. Suehle, J. S., Beginning an Engineering Career at a Government Agency, Eng. Hori- zons Spring, 152 (1984).

42. Suehle, J. S., Government Research, Engineering Horizons Fall, 226 (1984).

43. Suehle, J. S., Linholm, L. W., and Kafadar, K., Minimum Test Chip Sample Size

Selection for Characterizing Process Parameters, IEEE J. Solid State Circuits SC-19,

122-129 (1984).

44. Suehle, J. S., Linholm, L. W., and Kafadar, K., Minimum Test Chip Sample Size

Selection for Characterizing Process Parameters, IEEE Trans. Electron Devices ED31, 257-264 (1984).

45. Thurber, W. R„, Lowney, J. R., and Phillips, W. E., Measurement Techniques for

High Power Semiconductor Materials and Devices: Annual Report, January 1, 1982

to March 31, 1983, NBSIR 84-2838 (1984).

46. Wilson, C. L., and Blue, J. L„, Two-Dimensional Modeling of N-Channel MOSFETs

Including Radiation-Induced Interface and Oxide Charge, IEEE Trans. Nuch Sci.

NS-31, 1448-1452 (1984).

47. Wilson, C. L., Roitman, P., Marchiando, J. F., and Blue, J. L., Modeling of the Process

Sensitivity of Submicron Silicon MOSFETs, Ext. Abs. of the Electrochemical Society,

New Orleans, LA, Oct. 13-17, 1984 84-2, p. 709 (1984).

48. Yen, D., and Linholm, L. W., Using Linewidth Measurement Test Structures to Evaluate Lithographic Processes and Equipment, Test & Measurement World, 46ff (1984).

Page 17
Publications for the Year 1983

I. Albers, J., Investigation of the Relation Between the Correction Factor and the Local

Slope in Spreading Resistance, Ext. Abs. of the Electrochemical Society, Washington,

D.C., Oct. 9-14, 1983, 83-2, pp. 514-515 (1983).

2o Albers, J., The Relation Between the Correction Factor and the Local Slope in Spreading Resistance, J. Electrochem. Soc. 130, 2076-2080 (1983).

3. Albers, J., Roitman, P., and Wilson, C. L., Verification of Models for Fabrication of

Arsenic Source-Drains in VLSI MOSFET’s, EEEE Trans. Electron Devices ED-30,

1453-1462 (1983).

4. Albers, J., Wilson, C. L., and Blue, J. L., Effect of Surface Beveling on Carrier Profiles,

Ext. Abs. of the Electrochemical Society, San Francisco, CA, May 8-13, 1983 83-1,

pp. 641-642 (1983).

5. Baghdadi, A., Implicit Apodization of Interferograms in Fourier Transform Spectroscopy, Appl. Spectrosc. 37(6), 520-523 (1983).

6. Baghdadi, A., Multiple-Reflection Corrections in Fourier Transform Spectroscopy. Defects in Silicon 83-9, W. M. Bullis, and L. C. Kimerling Eds., pp. 293-302 (Electrochemical Society, Pennington, NJ, 1983).

7. Baghdadi, A., Multiple Reflection Corrections in Fourier Transform IR Spectroscopy

of Back Surface Damaged Wafers, Ext. Abs. of the Electrochemical Society, San

Francisco, CA, May 8-13, 1983, 83-1, pp. 460-461 (1983).

8. Baylies, W. A., Scace, R. I., and Vieweg-Gutberlet, F. G., International Standards

for Semiconductor Materials, ASTM Standardization News II, 21-23 (1983).

9. Bennett, H. S., Inequality of Hole Mobilities in Heavily Doped n-Type and p-Type

Silicon, Ext. Abs. of the Electrochemical Society, Washington, DC, Oct. 9-14, 1983,

83-2, pp. 542-543 (1983).

10.

Bennett, H. S., Improved Concepts for Predicting the Electrical Behavior of Bipolar

Structures in Silicon, IEEE Trans. Electron Devices ED-30, 920-927 (1983).

II. Bennett, H. S., Hole and Electron Mobilities in Heavily Doped Silicon: Comparison

of Theory and Experiment, Solid-State Electronics 26, 1157-1166 (1983).

12. Berkowitz, H. L., and Albers, J., The Relation Between Two-Probe and Four-Probe

Resistances on Nonuniform Structures, Ext. Abs. of the Electrochemical Society, San

Francisco, CA, May 8-13, 1983, 83-1, pp. 622-623 (1983).

13. Blackburn, D. L., Benedetto, J. M., and Galloway, K. F., The Effect of Ionizing

Radiation on the Breakdown Voltage of Power MOSFETs, IEEE Trans. Nucl. Sci.
NS-30, 4116-4121 (1983).

14. Blue, J. L., and Wilson, C. L., Two-Dimensional Analysis of Semiconductor Devices

Using General-Purpose Interactive PDE Software, IEEE Trans. Electron Devices ED30, 1056-1070 (1983).

15. Blue, J. L., and Wilson, C. L., Two-Dimensional Analysis of Semiconductor Devices

Using General-Purpose Interactive PDE Software, SIAM J. Stat. Sci. Comput. 4,

462-484 (1983).

16. Bunding, K. A., and Bell, M. I., Surface-Enhanced Raman Spectroscopy of Pyridine

Derivatives: Effects of Adsorption on Electronic Structure, Surf. Sci. 118, 329-344

(1983).

17. Carver, G. P., Influence of Short-Channel Effects on Dopant Profiles Obtained from

the DC MOSFET Profile Method, IEEE Trans. Electron Devices ED-30, 948-954

(1983).

18. Cassard, J. M., The Sensitivity of SPICE Simulations to Input Parameter Variations,

Proc. 1983 Custom Integrated Circuits Conf., Rochester, NY, May 23-25, 1983, pp.

224-228 (1983).

19. Chandler-Horowitz, D., and Candela, G. A., On the Accuracy of Ellipsometric Thickness Determinations for Very Thin Films, J. de Physique 44, CIO-23 - CIO-26 (1983).

20. Chen, D. Y., Lee, F. C., Blackburn, D. L., and Beming, D. W., Reverse-Bias Second

Breakdown of High Power Darlington Transistors, IEEE Trans. Aero. Elec. Sys.

AES-19, 840-847 (1983).

21. Chen, D. Y., Lee, F. C., Blackburn, D. L., and Beming, D. W., Reverse-Bias Second

Breakdown of High Power Darlington Transistors, Proc. 6th Int. Power Conversion

Conf., Orlando, FL, April 19-21, 1983, pp. 15-25 (1983).

22. Forman, R. A., Bell, M. I., Baghdadi, A., and Mayo, S., Effect of Striations on the

Compositional Analysis of Silicon Crystals. Defects in Silicon 83-9 W. M. Bullis, and

L. C. Kimerling Eds., pp. 303-312 (Electrochemical Society, Pennington, NJ, 1983).

23. Forman, R. A., Bell, M. I., Baghdadi, A., and Mayo, S., The Effect of Striations on the

Compositional Analysis of Silicon Crystals, Ext. Abs. of the Electrochemical Society

San Francisco, CA, May 8-13, 1983, 83-1, pp. 463-464 (1983).

24. French, J. C., Galloway, K. F., and Scace, R. I., The Challenge of Semiconductor

Metrology, Proc. 1983 Mea. Sci. Conf., Palo Alto, CA, Jan. 19-20, 1983, pp. 171-188

(1983).

25. Harman, G. G., The Microelectronic Bail-Bond Shear Test - A Critical Review and

Comprehensive Guide to Its Use, Int. J. Hybrid Microelectronics 6, 127-141 (1983).

26. Hinkley, J. A., A Blister Test for Adhesion of Polymer Films to SiC> 2 , J. Adhesion 16,
1983

115-126 (1983).

27. Kahn, A. H., and Lowney, J. R., Multiple Scattering Theory of the Density of States

in Semiconductors, Solid State Commun. 46, 229-233 (1983).

28. Lantz, M. D., and Galloway, K. F., Total Dose Effects on Circuit Speed Measurements,

IEEE Trans. Nucl. Sci. NS-30, 4264-4269 (1983).

29. Larrabee, R. D., and Lowney, J. R., Measurement Techniques for High-Resistivity

Detector-Grade Silicon: Progress Report, July 1, 1982 to June 30, 1983, NBSIR 83-

2792 (1983).

30. Lowney, J. R., and Bennett, H. S., Effect of Ionized Donors on the Electron and Hole

Densities of States in Silicon, J. Appl. Phys. 54, 1369-1374 (1983).

31. Lowney, J. R., Larrabee, R. D., and Thurber, W. R., The Relationship Between DeepLevel Measurements and Lifetime in Devices, Proc. 1983 Custom Integrated Circuits

Conference, Rochester, NY, May 23-25, 1983, pp. 152-156 (1983).

32. Mattis, R. L„, Semiconductor Measurement Technology: A FORTRAN Program for

Analysis of Data from Microelectronic Test Structures, NBS Spec. Publ. 400-75 (1983).

33. Mattis, R. L., and Zucker, R., Release Notes for STAT2 Version 1.31: An Addendum

to NBS Special Publication 400-75, NBSIR 83-2779 (1983).

34. Mazer, J. A., Linholm, L. W., Pramanik, B., Tsai, S., and Saxena, A. N., Comparison of Aluminum/Silicon Contact Resistance Values Obtained by Contact Chain and

Kelvin Measurement Structures, Ext. Abs. of the Electrochemical Society, Washington, D.C., Oct. 9-14, 1983, 83-2, pp. 453-454 (1983).

35. Mazer, J. A., Linholm, L. W., Pramanik, D., Tsai, S., and Saxena, A. N., Effects

of Phosphorus Contact Doping and Sheet Resistance Variations on Al/Si Interfacial

Contact Resistance, Proc. 1983 Custom Integrated Circuits Conf., Rochester, NY,

May 23-25, 1983, pp. 291-294 (1983).

36. Pande, K. P., and Seabaugh, A. C., Preparation of Device Quality GaAs Using PlasmaEnhanced MO-CVD Technique. HI-V Opto-Electronics Epitaxy and Device Related

Processes, 83-13, V. G. Keramidas, and S. Mahajan Eds., pp. 201-209 (Electrochemical Society, Pennington, NJ, 1983).

37. Phillips, W. E., and Lowney, J. R., Analysis of Nonexponential Transient Capacitance

in Silicon Diodes Heavily Doped with Platinum, J. Appl. Phys. 54, 2786-2791 (1983).

38. Phillips, W. E., Thurber, W. R., and Lowney, J. R., Improved Analysis Procedures for

Deep-Level Measurements by Transient Capacitance. Defects in Silicon 83-9 W. M.

Bullis, and L. C. Kimerling Eds., pp. 485-490 (Electrochemical Society, Pennington,

NJ, 1983).

39. Proctor, S. J., and Linholm, L. W., A Direct Measurement of Interfacial Contact

Page 20
1983

Resistance, Proc. Flat-Plate Solar Array Research Forum Photovoltaic Metallization

Systems, Pine Mt., GA, March 16-18, 1983, pp. 99-102 (1983).

40. Proctor, S. J., Linholm, L. W., and Mazer, J. A., Direct Measurements of Interfacial

Contact Resistance, End Contact Resistance, and Interfacial Contact Layer Uniformity, IEEE Trans. Electron Devices ED-30, 1535-1542 (1983).

41. Russell, T. J., Description of a CMOS Test Chip, NBS-39, NBSIR 83-2683 (1983).

42. Russell, T. J., Wilson, C. L., and Gaitan, M., Determination of the Spatial Variation

of Interface Trapped Charge Using Short-Channel MOSFETs, IEEE Trans. Electron

Devices ED-30, 1662-1671 (1983).

43. Suehle, J. S., Linholm, L. W.? and Kafadar, K., A Method for Selecting a Minimum

Test Chip Sample Size to Characterize Microelectronic Process Parameters, Proc.

1983 Custom Integrated Circuits Conf„, Rochester, NY, May 23-25, 1983, pp. 308-312

(1983).

44. Yen, D., Linholm, L. W., Glendinning, W. B., Bass, J. F., and Cheville, D. E., An

Electrical Measurement Technique for Estimating Proximity Effects in Electron-Beam

Lithography, Ext. Abs. of the Electrochemical Society, Washington, D.C., Oct. 9-14,

1983, 83-2, pp. 333-334 (1983).

45. Zimmerman, D. D., and Schafft, H. A., VLSI Package Reliability Workshop Report,

21st Annual Proceedings, Reliability Physics 1983, Phoenix, AZ, April 5-7, 1983, pp.

320-323 (1983).

Page 21
Publications for the Year 1982

1. Albers, J., Spreading Resistance Probe-Spacing Experiment Simulations: Effects of

Probe-Current Density and Layer Thickness, J„ Electrochem. Soc. 129, 2788-2795

(1982).

2. Albers, J., Probe-Spacing Experiment Simulation and the Relation Between Spreading

Resistance and Sheet Resistance, J. Electrochem. Soc. 129, 599-605 (1982).

3. Blackburn, D. L., and Beaming, D. W., Power MOSFET Temperature Measurements,

PESC s 82 Record, IEEE Power Electronics Specialists Conference 1982, Cambridge,

MA, June 14-17, 1982, pp. 400-407 (1982).

4. Blackburn, D. L., Berning, D. W., Benedetto, J. M., and Galloway, K. F., Ionizing

Radiation Effects on Power MOSFETs During High Speed Switching, IEEE Trans.

Nucl. ScL NS-29, 1555-1558 (1982).

5. Bullis, W. M., and Nyyssonen, D., Optical Linewidth Measurements on Photomasks

and Wafers, Chapter 7. VLSI Electronics: Microstructure Science Semiconductor

Microiithography, Vol. 3, N. G. Einspruch Ed., pp. 119-126 (Academic Press, New

York, NY, 1982).

6. Carver, G. P., Mattis, R. L., and Buehler, M. G., Design Considerations for the

Cross-Bridge Sheet Resistor, NBSIR 82-2548 (1982).

7. Chandler-Horowitz, D., Ellipsometric Accuracy and the Principal Angle of Incidence,

Proc. Soc. Photo-Optical Instrum. Engrs., Integrated Circuit Metrology 342, 121-130

(1982).

8. Chandler-Horowitz, B., and Candela, G. A., Principal Angle Spectroscopic Ellipsometry Utilizing a Rotating Analyzer, Appl. Optics 21, 2972-2977 (1982).

9. Cohen, E. C., and Ruthberg, S., Semiconductor Measurement Technology: NBS/RADC

Workshop, Moisture Measurement Technology for Hermetic Semiconductor Devices,

H, NBS Spec. Publ. 400-72 (1982).

10. Croarkin, M. C., and Varner, R. N., Measurement Assurance for Dimensional Measurements on Integrated-Circuit Photomasks, NBS Tech. Note 1164 (1982).

11. Harman, G. G., Semiconductor Measurement Technology: The Use of Acoustic Emission to Determine the Integrity of Large Kovar Glass-Sealed Microelectronic Packages,

NBS Spec. Publ. 400-70 (1982).

12. Harman, G. G., How the “New” Technology Has Changed and Increased Classical

Package-Related Failure Modes, Ext. Abs. VLSI Packaging Workshop (NBS/IEEE/CHMT),

Gaithersburg, MD, Sept. 13-14, 1982, pp. 70-72 (1982).
1982

13. Harman, G. G., Acoustic-Emission-Monitored Tests for TAB Inner Lead Bond Quality,

IEEE Trans. Components, Hybrids, and Manufacturing Technology CHMT-5, 445-

453 (1982).

14. Harman, G. G., Acoustic-Emission-Monitored Tests for TAB Inner Lead Bond Quality,

Proc. 32nd Electronic Components Conf., San Diego, CA, May 10-12, 1982, pp. 268-

276 (1982).

15. Harman, G. G., and Harmison, K. A., The Assessment of Hybrid Package Glass-Metal

Seal Reliability Using Acoustic-Emission Measurement Techniques, Int. J. Hybrid

Microelectronics 5, 248-259 (1982).

16. Hogan, S., and Schafft, H. A., Workshop Summary [of the Commercial Photovoltaics

Measurements Workshop, Vail, CO, July 17-19, 1981], Solar Cells 7 (1-2), 3-22 (1982).

17. Jerke, J. M., Croarkin, M. C., and Varner, R. N., Semiconductor Measurement

Technology: Interlaboratory Study on Linewidth Measurements for Antireflective

Chromium Photomasks, NBS Spec. Publ. 400-74 (1982).

18. Jerke, J. M., and Wendell, C. E., Use of the National Bureau of Standards (NBS) Antireflective (AR)-Chromium Optical Linewidth Standard for Measurements on Other

Types of Chromium Photomasks, Proc. Soc. Photo-Optical Instrum. Engrs., Integrated Circuit Metrology 342, 15-26 (1982).

19. Johnson, N. M., DLTS Analysis of Residual Damage in Low-Dose Ion-Implanted Silicon, NBS-GCR 81-364 (1982).

20. Kahn, A. H., and Lowney, J. R., Effect of Impurity Pairs on the Disappearance of

Impurity Levels in Silicon, J. Appl. Phys. 53, 454-456 (1982).

21. Lowney, J. R., The Effect of Bandgap Narrowing on Diffusion Processes in Silicon.

VLSI Science and Technology/ 1982, C. J. Dell’Oca, and W. M. Bullis Eds., pp. 123-

129 (Electrochemical Society, Pennington, NJ, 1982).

22. Lowney, J. R., and Bennett, H. S., Effect of Donor Impurities on the Conduction and

Valence Bands of Silicon, J. Appl. Phys. 53, 433-438 (1982).

23. Mattis, R. L., Till, L. J., and Frisch, R. C., A Computer Program for Analysis of Data

from Microelectronic Test Structures, NBSIR 82-2492 (1982).

24. Mayo, S., Lucatorto, T. B., and Luther, G. G., Laser Ablation and Resonance Ionization Spectrometry for Trace Analysis of Solids, Anal. Chem. 54, 553-556 (1982).

25. Nyyssonen, D., Theory of Optical Edge Detection and Imaging of Thick Layers, J. Opt. Soc. Am. 72, 1425-1436 (1982).

26. Nyyssonen, D., Calibration of Optical Systems for Linewidth Measurements on Wafers,

Opt. Eng. 21 (5), 882-887 (1982).

Page 23
1982

27. Nyyssonen, D., Laser Micrometrology for Integrated Circuits, Proc. Inspection, Measurement, and Control Symp., ICALEO ’82, Boston, MA, Sept. 20-23, 1982, pp.

24-30 (1982).

28. Nyyssonen, D., Design of an Optical Linewidth Standard Reference Material for

Wafers, Proc. Soc. Photo-Optical lustrum. Engrs., Integrated Circuit Metrology

342, 27-34 (1982).

29. Oettinger, F. F., and Albers, J., Thermal Test Chips for VLSI Package Evaluation,

Ext. Abs., VLSI Packaging Workshop (NBS/XEEE/CHMT), Gaithersburg, MD, Sept.

13-14, 1982, pp. 46-47 (1982).

30. Phillips, W. E., Improved Thermometry for Deep-Level Measurements, J. Phys. E

15, 499-501 (1982).

31. Proctor, S. J., and Linholm, L. W., A Microelectronic Test Structure for Measuring

Contact Resistance in Integrated Circuits, Ext. Abs. of the Electrochemical Society

82-1, 372-373 (1982).

32. Proctor, S. J., and Linholm, L. W,, A Direct Measurement of Interfacial Contact

Resistance, IEEE Electron Device Letters EDL-3, 294-296 (1982).

33. Russell, T. J., Production-Compatible Microelectronic Test Structures for the Measurement of Interface State Density and Neutral Trap Density, NBSIR 81-2413 (1982).

34. Ruthberg, S., Semiconductor Measurement Technology: Graphical Solution for the

Helium Leak Detector and Radioisotope Methods of Hermetic Test, Master Graphs

and Instructions, NBS Spec. Publ. 400-73 (1982).

35. Ruthberg, S., Hermetic Testing of Large Hybrid Packages, Int. J. Hybrid Microelectronics 5, 215-232 (1982).

36. Ruthberg, S., Leak Testing of Hermetically Sealed Electronic Components, Proc.

Qualtest I, ASNT, Pittsburgh, PA, Oct. 4-7, 1982, pp. 431-436 (1982).

37. Scace, R. I., The Semiconductor Equipment and Materials Institute Specifications for

Solar Cell Silicon, Solar Cells 7 (1-2), 77-78 (1982).

38. Schafft, H. A., Measurements for Commercial Photovoltaics: A Status Report, Solar

Cells 7 (1-2), 23-46 (1982).

39. Stahlbush, R. E., and Forman, R. A., Vibronic Spectrum of the U2 Xsoelectronic

Center in Si:In, 3. Luminescence 26, 227-232 (1982).

40. Suehle, J. S., Linholm, L. W., and Marshall, G. M., Evaluation of a CMOS/SOS

Process Using Process Validation Wafers, NBSIR 82-2514 (1982).

41.. Thomas, D. B., An Approved Laboratory Program for Photovoltaic Reference Ceil

Development, Solar Cells 7 (1-2), 131-134 (1982).

Page 24
42. Thomas, D. B., A Certification Program for Photovoltaic Modules, Solar Cells 7 (1-2),

183-186 (1982).

43. Thurber, W. R., Forman, R. A., and Phillips, W. E., A Novel Method to Detect

Nonexponential Transients in Deep Level Transient Spectroscopy, J. Appl. Phys. 53,

7397-7400 (1982).

44. Thurber, W. R., Phillips, W. E., and Larrabee, R. D„, Measurement Techniques for

High Power Semiconductor Materials and Devices: Annual Report, October 1, 1980

to December 31, 1981, NBSER 82-2552 (1982).

45. Waksman, D., Solar Collector Certification Activities and Experiences, Solar Cells 7

(1-2), 187-196 (1982).

46. Wilson, C. L., and Blue, J. L., CS1: A Two-Dimensional Finite Element Charge-Sheet

Model of a Short-Channel MOS Transistor, NBSIR 82-2471 (1982).

47. Wilson, C. L., and Blue, J. L., Modeling of Ionizing Radiation Effects in Short-Channel

MOSFETs, IEEE Trans. NucL Sci. NS-29, 1676-1680 (1982).

48. Wilson, C. L., and Blue, J. L„, Two-Dimensional Finite Element Charge-Sheet Model

of a Short-Channel MOS Transistor, Solid-State Electronics 25, 461-477 (1982).

49. Wilson, R. G., and Jamba, D. M„, Semiconductor Measurement Technology: Differential Capacitance-Voltage Profiling of Schottky Barrier Diodes for Measuring Implanted

Depth Distributions in Silicon, NBS Spec. Publ. 400-71 (1982).

50. Wilson, R. G., and Weglein, R. D., Reflection Acoustic Microscopy, NBS-GCR 82-401

(1982).

51. Yen, D., Electrical Test Methods for Evaluating Lithographic Processes and Equipment, Proc. Soc. Photo-Optical Instrum. Engrs., Integrated Circuit Metrology 342,

73-81 (1982).

52. Yen, D., Linholm, L. W., and Buehler, M. G., A Cross-Bridge Test Structure for

Evaluating the Linewidth Uniformity of an Integrated Circuit Lithography System, J. Electrochem. Soc. 129, 2313-2318 (1982).
1981

Publications for the Year 1981

1. Baghdadi, A., and Forman, R. A., Tertiary Interferograms in Fourier Transform Spectroscopy, Appl. Spectrosc. 35(5), 473-475 (1981).

2. Bennett, H. S., Upper Limits for the Number of Bound States Associated with the

Yukawa Potential, J. Res. Natl. Bur. Standards 86, 503-508 (1981).

3. Bennett, H. S., and Lowney, J. R., Effect of Donor Impurities on the Density of States near the Band Edge in Silicon, J. Appl. Phys. 52, 5633-5642 (1981).

4. Beming, D. W., Use of Vacuum Tubes in Test Instrumentation for Measuring Characteristics of Fast High-Voltage Semiconductor Devices, IEEE Trans. Instrumentation

and Measurement IM-30, 226-227 (1981).

5. Beming, D. W., and Blackburn, D. L., The Effect of Magnetic Package Leads on the

Measurement of Thermal Resistance of Semiconductor Devices, EEEE Trans. Electron

Devices ED-28, 609-611 (1981).

6. Blackburn, D. L., Power Transistor Switching Characterization, NBSIR 81-2204 (1981)

7. Blackburn, D. L., Robbins, T. C., and Galloway, K. F., VDMOS Power Transistor

Drain-Source Resistance Radiation Dependence, IEEE Trans. Nucl. ScL NS-28, * 4354-4359 (1981).

8. Blue, J. L., and Wilson, C. L., Calculating Eigenvalues and Eigenfunctions Using an

Interior Constraint, J. Computational Physics 44, 70-83 (1981).

9. Buehler, M. G., and Linholm, L. W., Toward a Standard Test Chip Methodology for

Reliable, Custom Integrated Circuits, Proc. 1981 Custom Integrated Circuits Conf.,

Rochester, NY, May 11-13, 1981, pp. 142-146 (1981).

10. Buehler, M. G., and Linholm, L. W., The Role of Test Chips in Coordinating Logic

and Circuit Design and Layout Aids for VLSI, Proc. 2d Cal. Tech. Conf. on VLSI,

Pasadena, CA, Jan. 19-21, 1981, pp. 135-151 (1981).

11. Buehler, M. G., and Linholm, L. W., Role of Test Chips in Coordinating Logic and

Circuit Design and Layout Aids for VLSI, Solid State Technology 24, 68-74 (1981).

12. Buehler, M. G., and Perloff, D. S., Microelectronic Test Chips and Associated Parametric Testers: Present and Future. Semiconductor Silicon/1981, H. R. Huff, R. J. Kriegler, and Y. Takeishi Eds., pp. 859-867 (Electrochemical Society, Pennington,

NJ, 1981).

13. Bullis, W. M., Advancement of Reliability, Processing and Automation for Integrated

Circuits with the National Bureau of Standards (ARPA/IC/NBS), NBSIR 81-2224

(1981).

Page 26
14. Bullis, W. M., Integrated Circuit Metrology, EDN Magazine 26 (20), 120- 122ff (1981).

15. Bullis, W. M., and Ehrstein, J. R., Reference Materials and the Semiconductor In- dustry, Solid State Technology 24(11), 56-63 (1981).

16. Bullis, W. M., and Scace, R. L, The Department of Commerce and the Role of Government Standards. VLSI Electronics, Microstructure Science, Vol.l, N. G. Einspruch

Ed., pp. 281-286 (Academic Press, New York, NY, 1981).

IT. Candela, G. A., Galloway, K. F., Liu, Y. M., and Fine, J., Measurement of the

Interlayer Between Aluminum and Silicon Dioxide Using Ellipsometric, CapacitanceVoltage and Auger Electron Spectroscopy Techniques, Thin Solid Films 82, 183-193

(1981).

18. Carver, G. P., Development of Test Structures for Characterization of the Fabrication and Performance of Radiation-Hardened Charge-Coupled Device (CCD) Imagers:

Annual Report, May 15, 1980 to May 14, 1981, NBSXR 81-2319 (1981).

19. Carver, G. P., and Cullins, W. A., Semiconductor Measurement Technology: A Manual Wafer Probe Station for an Integrated Circuit Test System, NBS Spec. Publ.

400-68 (1981).

20. Carver, G. P., Mattis, R. L., and Buehler, M. G., Microelectronic Test Patterns NBS12 and NBS-24, NBSIR 81-2234 (1981).

21. Ehrstein, J. R., and Seabaugh, A. C., Gallium Arsenide Materials Characterization:

Annual Report, October 12, 1978 to October 12, 1979, NBSIR 81-2403 (1981).

22. Forman, R. A., Bell, M. L, and Myers, D. R., Comments on “Raman Scattering from

Boron-Implanted Laser Annealed Silicon,” J. Appl. Phys. 52, 4337-4339 (1981).

23. Forman, R. A., Larrabee, R. D., Myers, D. R., Phillips, W. E,, and Thurber, W. R.,

Processing Effects on the Electrical and Optical Properties of Sulfur-Related Defect

Centers in Silicon and Similarities to the Oxygen Donor. Defects in Semiconductors,

J. Naxayan and T. Y. Tan Eds., pp. 79-84 (North Holland, NY, 1981).

24. Geist, J., and Lowney, J. R., Effect of Band-Gap Narrowing on the Built-In Electric

Field in n-Type Silicon, J. Appl. Phys. 52, 1121-1123 (1981).

25. Harman, G. G., The Use of Acoustic Emission as a Test Method for Electronic Interconnections and Joints, Proc. Int. Conf. Soft Soldering in Electronics & Precision

Mechanics, Munich, Germany, Nov. 11-12, 1981, pp. 104-110 (1981).

26. Helms, C. R., Schwarz, S. A., Spicer, W. E., and Taylor, N. J., Innovative Measurement Technology for the Semiconductor Device Industry Based on Electron Spectroscopy, NBS-GCR 81-345 (1981).

27. Lankford, W. F., Kowalski, P., and Schafft, H. A., Laser Scanning Measurements on

Solar Cell Test Pattern NBS-22, NBSIR 81-2260 (1981).
1981

28. Larrabee, R. D., Phillips, W. E., and Thurber, W. R., Measurement Techniques for

High Power Semiconductor Materials and Devices: Annual Report, October 1, 1979

to September 30, 1980, NBSIR 81-2325 (1981).

29. Larrabee, R. D., Thurber, W. R., and Bullis, W. M., Electrical Parameters of Extrinsic

Silicon, Circuits Manufacturing 21(5), 82-100 (1981).

30. Leedy, T. F., McLane, G. F., and Guenzer, G. C., Temperature Dependence of Transient Electron Radiation Upset in TTL Circuits, IEEE Trans. Nuch Sci. NS-28,

4597-4605 (1981).

31. Lehovec, K., and Fedotowsky, A., Solar Cell Mathematical Analysis and Computer

Simulation, NBS-GCR 80-285 (1981).

32. Li, S. S., Conductivity Mobility, Hall Mobility, and Resistivity in n-Type Silicon,

NBS-GCR 81-334 (1981).

33. Lin, J. F., Li, S. S., Linares, L. G., and Teng, K. W., Theoretical Analysis of Hall

Factor and Hall Mobility in p-Type Silicon, Solid-State Electronics 24, 827-833 (1981).

34. Linares, L. G., and Li, S. S., An Improved Model for Analyzing Hole Mobility and

Resistivity in p-Type Silicon Doped with Boron, Gallium, and Indium, J. Eleetrochem.

Soc. 128, 601-608 (1981).

35. Linholm, L. W., Semiconductor Measurement Technology: The Design, Testing, and

Analysis of a Comprehensive Test Pattern for Measuring CMOS/SOS Process Performance and Control, NBS Spec. Publ. 400-66 (1981).

36. Linholm, L. W., Mattis, R. L., Frisch, R. G., and Reeve, C. P., Characterizing and Analyzing Critical Integrated Circuit Process Parameters. Semiconductor Silicon/1981

H. R. Huff, R. J. Kriegler, and Y. Takeishi Eds,, pp. 906-920 (Electrochemical Society,

Pennington, NJ, 1981).

37. Lowney, J. R., Kahn, A. H., Blue, J. L., and Wilson, C. L., Disappearance of Impurity

Levels in Silicon and Germanium Due to Screening, J. Appl. Phys. 52, 4075-4080

(1981).

38. McCarthy, D., Acevedo, J., and Herman, D., Advanced Planar Silicon Test Structures,

NBS-GCR 81-327 (1981).

39. Mitchell, M. A., and Linholm, L. W., Semiconductor Measurement Technology: Test

Patterns NBS-28 and NBS-28A: Random Fault Interconnect Step Coverage and Other

Structures, NBS Spec. Publ. 400-65 (1981).

40. Mitchell, M. A., Linholm, L. W„, Russell, T. J., and Carver, G. P., Electrical Test

Structures for Characterization and Control of Microelectronics Processing. Proc.

Microelectronics Measurement Technology Seminar, San Jose, CA, March 17-18, pp.

VI-1 - VI-29 (Benwill Publishing Co., Boston, MA, 1981).

Page 28
1981

41. Myers, D. R., Comas, J., and Wilson, R. G., Effect of Silicon Dioxide Surface-Layer

Thickness on Boron Profiles for Directly Aligned Implants into (100) Silicon, J. AppL

Phys. 52, 3357-3359 (1981).

42. Novotny, D. B., Photoresist Sensitometry and Exposure Modeling, Solid State Technology 24 (3), 83-88, (1981).

43. Peckerar, M. C., and Galloway, K. F., Informal Survey of Federal Government Microelectronics Processing Facilities. Proc. 4th Biennial Univ /Industry/ Govt Microelectronics Symp., Mississippi State Univ., May 1981, p. HI (1981).

44. Roitman, P., Albers, J., Ehrstein, J. R., and Myers, D. R., Investigation of the TwoDimensional Shape of Ion-Implanted Regions, NBSXR 81-2398 (1981).

45. Ruthberg, S., Graphical Solution for the Back Pressurization Method of Hermetic

Test, IEEE Trans. Components, Hybrids, and Manufacturing Tech. CHMT-4, 217-

224 (1981).

48.

Sawyer, D. E., Kessler, H. K., Russell, T. J., Lankford, W. F., and Schafft, H. A., Measurement Techniques for Solar Cells, Annual Report, December 15, 1978 to December

14, 1979, NBSXR 80-2181 (1981).

47. Scace, R. I., Semiconductor Technology for the Non-Technologist, NBSXR 81-2197

(1981).

48. Scace, R. I., The Semiconductor Equipment and Materials Institute Specifications for

Solar Cell Silicon, Proc. Commercial Photovoltaics Measurements Workshop, Vail,

CO, July 17-19, 1981, pp. 107-108 (1981).

49. Schafft, H. A., Measurements for Commercial Photovoltaics: A Status Report, Proc.

Commercial Photovoltaics Measurements Workshop, Vail, CO, July 17-19, 1981, pp.

7-29 (1981).

50. Schafft, H. A., Ruthberg, S., and Cohen, E. C., Semiconductor Measurement Technology: ARPA/NBS Workshop V. Moisture Measurement Technology for Hermetic

Semiconductor Devices, NBS Spec. Publ. 400-69 (1981).

51. Schwarz, S. A., Helms, C. R., Spicer, W. E., and Taylor, N. J., Semiconductor Measurement Technology: The Capabilities and Limitations of Auger Sputter Profiling

for Studies of Semiconductors, NBS Spec. Publ. 400-67 (1981).

52. Thomas, D. B., A Certification Program for Photovoltaic Modules, Proc. Commercial

Photovoltaics Measurements Workshop, Vail, CO, July 17-19, 1981, pp. 275-278

(1981).

53. Thomas, D. B=, An Approved Laboratory Program for Photovoltaic Reference Cell

Development, Proc. Commercial Photovoltaics Measurements Workshop, Vail, CO,

July 17-19, 1981, pp. 201-204 (1981).

Page 29
1981

54. Thurber, W. R., Mattis, R. L., Liu, Y. M., and Filliben, J. J., Semiconductor Measurement Technology: The Relationship Between Resistivity and Dopant Density for

Phosphorus- and Boron-Doped Silicon, NBS Spec. Publ. 400-64 (1981).

55. Vasquez, R. P., Klein, J. D., Barton, J. J., and Grunthaner, F. J., Application of

Maximum-Entropy Spectral Estimation to Deconvolution of XPS Data, J. Electron.

Spectrosc. 23, 63-81 (1981).

56. Waksman, D., Solar Collector Certification Activities and Experiences, Proc. Commercial Photovoltaics Measurements Workshop, Vail, CO, July 17-19, 1981, pp. 279-

280 (1981).

57. Wilson, R. G., Measurement Technology for Critical Ion Implantation Parameters,

NBS-GCR 81-325 (1981).

58. Wilson, R. G„, and Weglein, R. D., Reflection Acoustic Microscope Measurement

Technology, NBS-GCR 81-363 (1981).

Page 30
1980

Publications for the Year 1980

1. Albers, J., Continuum Formulation of Spreading Resistance Correction Factors, J. Electrochem. Soc. 127, 2259-2263 (1980).

2. Albers, J., Comparison of Spreading Resistance Correction Factor Algorithms Using

Model Data, Solid-State Electronics 23, 1197-1205 (1980).

3. Albers, J., and Novotny, D. B., Intensity Dependence of Photochemical Reaction

Rates for Photoresists, J. Electrochem. Soc. 127, 1400-1403 (1980).

4. Blackburn, D, L., and Berning, D. W., An Experimental Study of Reverse-Bias Second

Breakdown, Tech. Digest, 1980 Int. Electron Devices Meeting, Washington, B.C.,

Dec. 8-10, 1980, pp. 297-301 (1980).

5. Buehler, M. G„, Effect of the Drain-Source Voltage on Dopant Profiles Obtained from

the d-e MOSFET Profile Method, IEEE Trans. Electron Devices ED-27, 2273-2277

(1980).

6. Buehler, M. G., The Use of Electrical Test Structure Arrays for Integrated Circuit

Process Evaluation, J. Electrochem. Soc. 127, 2284-2290 (1980).

7. Buehler, M. G., The D-C MOSFET Dopant Profile Method, J. Electrochem. Soc.

127, 701-704 (1980).

8. Bullis, W. M., Semiconductor Measurement Technology: Metrology for Submicrometer Devices and Circuits, NBS Spec. Publ. 400-61 (1980).

9. Bullis, W. M., Characterizing Semiconducting Materials, Semiconductor International

3 (9), 79-91 (1980).

10. Bullis, W. M., and Scace, R. I., The NBS Semiconductor Technology Program and

VLSI, NBSIR 80-2057 (1980).

11. Carver, G. P., and Buehler, M. G., An Analytical Expression for the Evaluation of

Leakage Current in the Integrated Gated-Diode Electrometer, IEEE Trans. Electron

Devices ED-27, 2245-2252 (1980).

12. Carver, G. P., Linholm, L. W., and Russell, T. J., Use of Microelectronic Test Structures to Characterize IC Materials, Processes, and Processing Equipment, Solid State

Technology 23 (9), 85-92 (1980).

13. Carver, G. P., and Rubin, S., Development of Test Structures for Characterization

of the Fabrication and Performance of Radiation-Hardened Charge-Coupled Device

(CCD) Imagers: Annual Report, December 1, 1978 to November 30, 1979, NBSIR

80-2000 (1980).

Page 31
1980

14. Comas, J., and Wilson, R. G., Channeling and Random Equivalent Depth Distributions of 150 keV Li, Be, and B Implanted in Silicon, J. Appl. Phys. 51, 3697-3701

(1980).

15. DeBlasio, R., Forman, S., Hogan, S., Nuss, G., Post, H., Ross, R. s and Schafft, H.

A., Interim Performance Criteria for Photovoltaic Energy Systems, SERI Report TR

742-654 (1980).

16. Duffy, M. T., Zanzucchi, P. J., Ham, W. E., Corboy, J. F., and Cullen, G. W., Semiconductor Measurement Technology: Method to Determine the Quality of Sapphire,

NBS Spec. Publ. 400-62 (1980).

17. Ehrstein, J. R., Some Considerations Regarding Film Thickness Standards for the

Semiconductor Industry, NBSIR 80-2158 (1980).

18. Ehrstein, J. R., Spreading Resistance Calibration for Gallium- or Aluminum-Doped

Silicon, J. Electrochem. Soc. 127, 1403-1404 (1980).

19. Ehrstein, J. R., Some Considerations Regarding Film Thickness Standards for the

Semiconductor Industry, Proc. Microelectronic Measurement Technology Seminar,

San Jose, CA, March 12-13, 1980, pp. 324-334 (1980).

20. Forman, R. A., Optical Study of Isotopic Effects in the Sulfur Deep Level in Silicon,

Appl. Phys. Letters 37, 776-778 (1980).

21. Galloway, K. F., Radiation Damage Estimates and Control in Ion-Beam Lithography,

J. Electrochem. Soc. 127, 1862-1864 (1980).

22. Grunthaner, F. J., Lewis, B. F., Vasquez, R. P., Maserjian, J., and Madhukar, A., Reduced Oxidation States and Radiation-Induced Trap Generation at Si/SiOs Interface.

The Physics of MOS Insulators, G. Lucovsky, S. T. Pantelides and F. L. Galeener

Eds., pp. 290-295 (Pergamon Press, New York, NY, 1980).

23. Grunthaner, F. J., Lewis, B. F., Zamini, N., Maserjian, J., and Madhukar, A., XPS

Studies of Structure-Induced Radiation Effects at the Si/SiOa Interface, IEEE Trans.

NucL Sci. NS-27, 1640-1646 (1980).

24. Ham, W. E., Semiconductor Measurement Technology: Comprehensive Test Pattern

and Approach for Characterizing SOS Technology, NBS Spec. Publ. 400-56 (1980).

25. Harman, G. G., The Use of Acoustic Emission to Determine the Integrity of Large

Hybrid Packages, NBSIR 80-2055 (1980).

26. Hasegawa, S., Performance Characteristics of a Thin-Film Aluminum Oxide Humidity

Sensor, Proc. 30th Electronic Components Conf., San Francisco, CA, April 28-30,

1980, pp. 386-391 (1980).

27. Jerke, J. M., Semiconductor Measurement Technology: Accurate Linewidth Measurements on Integrated-Circuit Photomasks, NBS Spec. Publ. 400-43 (1980).

Page 32
1980

28. Kasdan, H. L., Linewidth Measurement by Diffraction Pattern Analysis, NBS-GCR

79-175 (1980).

29. Kenney, J. M., Semiconductor Measurement Technology: Modulation Measurements

for Microwave Mixers, NBS Spec. Publ. 400-16 (1980).

30. Lankford, W. F., and Schafft, H. A., Drafting Test Methods for Photovoltaic Systems,

NBSIR 80-2060 (1980).

31. Larrabee, R. D. s Interpretation of Hall Measurements, J. Electrochem. Soc. 127,

1640-1643 (1980).

32. Larrabee, R. D., and Blackburn, D. L., Theory and Application of a Nondestructive Photovoltaic Technique for the Measurement of Resistivity Variations in Circular

Semiconductor Slices, Solid-State Electronics 23, 1059-1068 (1980).

33. Larrabee, R. D., and Thurber, W. R., Theory and Application of a Two-Layer Hall

Technique, IEEE Trans. Electron Devices ED-27, 32-36 (1980).

34. Larrabee, R. D., Thurber, W. R., and Bullis, W. M„, Semiconductor Measurement

Technology: A FORTRAN Program for Calculating the Electrical Properties of Extrinsic Silicon, NBS Spec. Publ. 400-63 (1980).

35. Lehovec, K., and Fedotowsky, A., Scanning Light Spot Analysis of Faulty Solar Cells,

Solid-State Electronics 23, 565-576 (1980).

36. Lowney, J. R., and Larrabee, R. D., The Use of Fick’s Law in Modeling Diffusion

Processes, IEEE Trans. Electron Devices ED-27, 1795-1798 (1980).

37. Lucatorto, T. B., Mcllrath, T. J., Mayo, S., and Furumoto, H. W., High-Stability

Coaxial Flashiamp-Pumped Dye Laser, Appl. Optics 19, 3178-3180 (1980).

38. Myers, D. R., Semiconductor Measurement Technology: Technical Impediments to a More Effective Utilization of Neutron Transmutation Doped Silicon for High-Power

Device Fabrication, NBS Spec. Publ. 400-60 (1980).

39. Myers, D. R., Koyama, R. Y., and Phillips, W. E., An Implantation Predeposition

Technique for the Introduction of Deep-Level Chemical Impurities, Radiation Effects

48, 145-150 (1980).

40. Myers, D. R., Roitman, P., Mayo, S., and Horowitz, D., Electronic Properties of

Ion-Implanted Silicon Annealed with Microsecond Dye-Laser Pulses. Laser and Electron Beam Processing of Mater., C. W. White and P. S. Peercy Eds., pp. 285-290

(Academic Press, New York, NY, 1980).

41. Myers, D. R., and Wilson, R. G., Alignment Effects on Implantation Profiles in Silicon,

Radiation Effects 47, 91-94 (1980).

42. Novotny, D. B., Experimental Photoresist Sensitometry and Exposure Modeling, Proc.

Page 33
1980

Soc. Photo-Optical Instmm. Engrs., Semiconductor Microlithography V, 221, 184-

193 (1980).

43. Nyyssonen, D., Calibration of Optical Systems for Linewidth Measurements on Wafers,

Proc. Soc. Photo-Optical Instrum. Engrs., Semiconductor Microlithography V, 221,

119-126 (1980).

44. Nyyssonen, D., Linewidth Measurement Spotlight, Semiconductor International 3 (3),

39-56 (1980).

45. Oettinger, F. F., and Larrabee, R. D., Measurement Techniques for High Power Semiconductor Materials and Devices: Annual Report, October 1, 1978 to September 30,

1979, NBSIR 80-2061 (1980).

46. Patrick, S., and Giuntini, R., Terrestrial Solar Simulators for Photovoltaic and Combined Photovoltaic and Thermal Device Measurement and Evaluation, NBS-GCR

80-279 (1980).

47. Quate, C. F., Innovative Measurement Technology for the Semiconductor Device In- dustry - “The Acoustic Microscope - A New Instrument for Viewing Integrated Circuits,” NBS-GCR 80-204 (1980).

48. Ruthberg, S., A Rapid Cycle Method for Gross Leak Testing with the Helium Leak

Detector, IEEE Trans. Components, Hybrids, and Manufacturing Tech. CHMT-3,

564-570 (1980).

49. Ruthberg, S., A Rapid Cycle Method for Gross Leak Testing with the Helium Leak

Detector, Proc. 30th Electronic Components Conf., San Francisco, CA, April 28-30,

1980, pp. 128-134 (1980).

50. Sawyer, D. E., and Kessler, H. K., Laser Scanning of Solar Cells for the Display of

Cell Operating Characteristics and Detection of Cell Defects, IEEE Trans. Electron

Devices ED-27, 864-872 (1980).

51. Sawyer, D. E., Kessler, H. K., and Schafft, H. A., Measurement Techniques for Solar

Cells, Annual Report for the Period September 15, 1977 to December 14, 1978, NBSIR

80-2027 (1980).

52. Scare, R. I., ASTM Standard Test Methods for the Semiconductor Industry, Proc.

1st SEMI European Symp. on Materials & Processing, Zurich, Switzerland, March

13, 1981, pp. 202-209 (1980).

53. Thomas, D. B., Information and Guidelines for a Proposed Laboratory Accreditation and Product Certification Program for Photovoltaic Energy Conversion Systems,

NBSIR 80-2028 (1980).

54. Thurber, W. R., A Comparison of Measurement Techniques for Determining Phosphorus Densities in Semiconductor Silicon, J. Electron. Mater. 9, 551-560 (1980).

Page 34
1980

55. Thurber, W. R., Mattis, R. L., Liu, Y. M., and Filliben, J. J., Resistivity-Dopant

Density Relationship for Phosphorus-Doped Silicon, J. Electrochem. Soc. 127, 1807-

1812 (1980).

56. Thurber, W. R., Mattis, R. L., Liu, Y. M., and Filliben, J. J., Resistivity-Dopant

Density Relationship for Boron-Doped Silicon, J. Electrochem. Soc. 127, 2291-2294

(1980).

57. Vasquez, R. P., and Grunthaner, F. J., Intensity Analysis of XPS Spectra to Determine

Oxide Uniformity: Application to SiOa/Si Interfaces, Surface Science 99, 681-688

(1980).

58. Wilson, C. L., Correction of Differential Capacitance Profiles for Debye Length Effects,

IEEE Trans. Electron Devices ED-27, 2262-2267 (1980).

59. Wilson, C. L., and Blue, J. L., Semiconductor Device Simulation, Proc. Conf. Elliptic

Problem Solvers, Sante Fe, NM, June 30-July 2, 1980, pp. 435-439 (1980).

60. Wilson, R. G., Atom and Carrier Depth Distribution for 300 keV Arsenic Channelled

in the <110>of Silicon as a Function of Alignment Angle and Ion Fluence, Radiat.

Eff. Lett. 57, 109-113 (1980).

61. Wilson, R. G., and Comas, J., Correlation of Atomic Distribution and Implantation

Induced Damage Profiles in Be-Ion Implanted Si, Radiat. Eff. 47, 137-142 (1980).

62. Wilson, R. G., and Weglein, R. D., Acoustic Material Signatures Using the Reflection

Acoustic Microscope, Ultrasonic Mater. Characterization, H. Berger and M. Linzer

Eds., NBS Spec. Publ. 596 (1980).

Page 35
Publications for the Year 1979

I. Adachi, T., and Helms, C. R., Electron Energy Loss Spectroscopy Studies of the

Si-SiOa Interface, Appl. Phys. Lett. 35, 199-201 (1979).

2o Baum, M., A Little Less Witchery, A Little More Craft - Improvements for Semiconductor Quality Control, Dimensions/NBS 63(10), 12-20 (1979).

3. Beming, D. W., Semiconductor Measurement Technology: A Reverse-Bias Safe Operating Area Transistor Tester, NBS Spec. Publ. 400-54 (1979).

4. Bhar, T. N., Dat, R., Koyama, R. Y., and Galloway, K. F., Effect of Ionising Radiation

on Mobile-Ion Density in M.O.S Oxides, Electron. Lett. 15, 16-17 (1979).

5. Blackburn, D. L., Semiconductor Measurement Technology: An Automated Photovoltaic System for the Measurement of Resistivity Variations in High-Resistivity Circular Silicon Slices, NBS Spec. Publ. 400-52 (1979).

6. Blackburn, D. L., and Beming, D. W., Reverse-Bias Second Breakdown in Power

Transistors, Proc. Electrical Overstress/Electrostatic Discharge Symp., Denver, CO,

Sept. 24-27, 1979, pp. 116-121 (1979).

7. Buehler, M. G., Comprehensive Test Patterns with Modular Test Structures: The

2 by N Probe-Pad Array, Proc. Microelectronics Measurement Technology Seminar,

San Jose, CA, Feb. 6-7, 1979, pp. 27-38 (1979).

8. Buehler, M. G., Comprehensive Test Patterns with Modular Test Structures: The 2

by N Probe-Pad Array Approach, Solid State Technology 22 (10), 89-94 (1979).

9. Bullis, W. M., Metrology for Submicrometer Devices and Structures, Proc. Microcircuit Engineering ’79 - Microstructure Fabrication, Aachen, West Germany, Sept.

25-27, 1979, pp. 271-282 (1979).

10.

Carver, G. P., and Buehler, M. G., The Development of Test Structures for Characterization of the Fabrication and Performance of Radiation-Hardened CCD Imagers,

NBSIR 79-1744 (1979).

II. Chang, T. T., Detection of Phosphorus in Epitaxial Silicon by EPR, NBSIR 79-1748

(1979).

12. Dickey, D. H., and Ehrstein, J. R., Semiconductor Measurement Technology: Spreading Resistance Analysis for Silicon Layers with Nonuniform Resistivity 400-48 (1979).

13. Dumin, D. S., and Buehler, M. G., A Low Cost Approach to Modernize Undergraduate

Electron Laboratory Instruction, Conference Record, 3rd Biennial Univ/Industry/ Govt

Microelectronics Symp., Lubbock, TX, May 21-23, 1979, pp. 168-170 (1979).
14. Ehrstein, J. R., Two-Probe (Spreading Resistance) Measurements for Evaluation of

Semiconductor Materials and Devices. Nondestructive Evaluation of Semiconductor

Materials and Devices, J. N. Zemel Ed., pp. 1-66 (Plenum Press, New York, NY,

1979).

15. Galloway, K. F., VLSI Processing, Radiation and Hardening, Semiconductor International 2 (4), 65-73 (1979).

16. Galloway, K. F., and Mayo, S., Radiation Levels Associated with the Electron-Beam

Metallization Process, Solid State Technology 22 (5), 96-100 (1979).

17. Galloway, K. F., Mayo, S., and Roitman, P., Radiation Levels Associated with Advanced Lithographic Techniques, J. Electrochem. Soc. 126, 2245-2248 (1979).

18. Gilsinn, D., and Kraft, R., Semiconductor Measurement Technology: DISTRIB I, An

Impurity Redistribution Computer Program, NBS Spec. Pubh 400-57 (1979).

19. Goldsmith, N., and Mayer, A., High-Speed Spreading Resistance Probe, NBS-GCR

79-166 (1979).

20. Goodman, A. M., Extended Range MIS C(V) Measurement, A Technique for Monitoring Semiconductor Device Processing, NBS-GCR 78-155 (1979).

21. Grunthaner, F. J., Grunthaner, P. J., Vasquez, R. P., Lewis, B. F., Maserjian, J., and

Madhukar, A., Local Atomic and Electronic Structure of Oxide/GaAs and Si02/Si

Interfaces Using High-Resolution XPS, J. Vac. Sci. Technol. 16, 1443-1453 (1979).

22. Grunthaner, F. J., Grunthaner, P. J., Vasquez, R. P., Lewis, B. F., Maserjian, J.,

and Madhukar, A., High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of

Local Atomic Structure: Application to Amorphous SiO? and the Si-SiOa Interface,

Phys. Rev. Letters 43, 1683-1686 (1979).

23. Harman, G. G., Semiconductor Measurement Technology: Nondestructive Tests Used

to Insure the Integrity of Semiconductor Devices, with Emphasis on Acoustic Emission

Techniques, NBS Spec. Publ. 400-59 (1979).

24. Harman, G. G., Non-Destructive Tests Used to Insure the Integrity of Semiconductor

Devices with Emphasis on Passive Acoustic Techniques. Nondestructive Evaluation of

Semiconductor Materials and Devices, J. N. Zemel Ed., pp. 677-738 (Plenum Press,

New York, NY, 1979).

25. Helms, C. R., Morphology and Electronic Structure of Si-SiOa Interfaces and Si Surfaces, J. Vac. Sci. Technol. 16, 608-614 (1979).

26. Helms, C. R., Johnson, N. M., Schwarz, S. A., and Spicer, W. E., Studies of the Effect

of Oxidation Time and Temperature on the Si-SiOa Interface Using Auger Sputter

Profiling, J. Appl. Phys. 50, 7007-7014 (1979).

27. Johnson, N. M., Bartelink, D. J., Gold, R. B., and Gibbons, J. F., Constant-Capacitance
1979

DLTS Measurement of Defect-Density Profiles in Semiconductors, J. Appl. Phys. 50,

4828-4833 (1979).

28. Koyama, R. Y., and Buehler, M. G., Semiconductor Measurement Technology: A

Wafer Chuck for Use Between -196 and 350C, NBS Spec. Publ. 400-55 (1979).

29. Koyama, R. Y., and Buehler, M. G., Novel Variable-Temperature Chuck for Use in

the Detection of Deep Levels in Processed Semiconductor Wafers, Rev. Sci. Instrum.

50, 983-987 (1979).

30. Larrabee, G. B., and Dobrott, R. D., Techniques for the Preparation and Analysis

of Standard Silicon Semiconductor Specimens for the Ion Microprobe Mass Analyzer,

NBS-GCR 79-158 (1979).

31. Leedy, T. F., Large Scale Integration Digital Testing - Annotated Bibliography: 1969 - 1978, NBS Tech. Note 1102 (1979).

32. Li, S. S., Semiconductor Measurement Technology: The Theoretical and Experimental

Study of the Temperature and Dopant Density Dependence of Hole Mobility, Effective

Mass, and Resistivity in Boron-Doped Silicon, NBS Spec. Publ. 400-47 (1979).

33. Linholm, L. W., CMOS/SOS Test Patterns for Process Evaluation and Control: Annual Report, March 1 to November 1, 1978, NBSIR 79-1595 (1979).

34. Linholm, L. W., Carver, G. P., and Russell, T. J., The Use of Microelectronic Test

Structures to Characterize IC Materials, Processes, and Processing Equipment, Proc.

Measurement Sci. Conf., San Luis Obispo, CA, Nov. 30 - Dec. 1, 1979, pp. 129-150

(1979).

35. Mayo, S., and Evans, W. H., Development of Hydrogen and Hydroxyl Contamination

in Thin Silicon Dioxide Thermal Films, NBSIR 78-1558 (1979).

36. Myers, D. R., and Phillips, W. E., Observation of Unequal Densities for Sulfur Defects

in Silicon Predeposited by Low Fluence Ion Implantation, J. Electron. Mat. 8, 781-788

(1979).

37. Myers, D. R., Roitman, P., and Mayo, S., Electrical Characterization of Low-Dose IonImplanted Silicon Annealed with Microsecond Laser Pulses. Laser-Solid Interactions

and Laser Processing - 1978, AIP Conference Proc. 50, S. D. Ferris, H. J. Leamy, and

J. M. Poate Eds., pp. 563-568 (American Institute of Physics, New York, NY, 1979).

38. Myers, D. R., Wilson, R. G„, and Comas, J., Considerations of Ion Channeling for

Semiconductor Microstructure Fabrication, J. Vac. Sci. Technol. 16, 1893-1896

(1979).

39. Nyyssonen, D., Spatial Coherence: The Key to Accurate Optical Micrometrology,

Proc. Soc. Photo-Optical Instrum. Engrs., Applications of Optical Coherence 194,

34-44 (1979).

Page 38
1979

40. Nyyssonen, D., and Jerke, J. M., Optical Linewidth Measurement - A Basic Understanding, Proc. Microelectronic Measurement Technology Seminar, San Jose, CA,

Feb. 6-7, 1979, pp. 251-266 (1979).

41. Oettinger, F. F., Measurement Techniques for High Power Semiconductor Materials

and Devices, Annual Report, October 1, 1977 to September 30, 1978, DoE/RA-0041,

NBSIR 79-1756 (1979).

42. Phillips, W. E., Koyama, R. Y., and Buehler, M. G., Suppression of Measurement

Interferences from Interface States and Mobile Ions in Thermally Stimulated Current

Measurements in an MOS Capacitor, J. Electrochem. Soc. 126, 1979-1981 (1979).

43. Quate, C. F., The Acoustic Microscope, Sci. Am. 241(4), 62-70 (1979).

44. Quate, C. F., Atalar, A., and Wickramasinghe, H. K., Acoustic Microscopy with

Mechanical Scanning - A Review, Proc. IEEE 67, 1092-1114 (1979).

45. Rubin, S., and Oettinger, F. F., Semiconductor Measurement Technology: Thermal

Resistance Measurements on Power Transistors, NBS Spec. Publ. 400-14 (1979).

46. Russell, T. J., and Maxwell, D. A., Semiconductor Measurement Technology: A

Production-Compatible Microelectronic Test Pattern for Evaluating Photomask Misalignment, NBS Spec. Publ. 400-51 (1979).

47. Russell, T. J., Maxwell, D. A., Reimann, C. T., and Buehler, M. G., A Microelectronic Test Pattern for Measuring Uniformity of an Integrated Circuit Fabrication

Technology, Solid State Technology 22 (2), 71-74 (1979).

48. Sawyer, D. E., Kessler, H. K., and Schafft, H. A., Measurement Techniques for Solar

Cells, Quarterly Report for the Period April 1 to June 30, 1978, NBSIR 79-1909

(1979).

49. Sawyer, D. E., Kessler, H. K., and Schafft, H. A., Solar Cell Measurement Technique

Development and Other Services, Proc. Photovoltaic Advanced Materials Review

Meeting, Oct. 24-26, 1978, SERI/TP-49-105, CONF. 781017, pp. 41-50 (1979).

50. Sawyer, D. E., and Schafft, H. A., Semiconductor Measurement Technology: NBS/DOE

Workshop, Stability of (Thin Film) Solar Cells and Materials, NBS Spec. Publ. 400-58

(1979).

51. Scace, R. I., Zinc Oxide Varistors for Lightning Arrester Service, NBSIR 79-1939

(1979).

52. Scace, R. I., Technology of Semiconductor Manufacturing, Product Development, and

Product Types, Appendix to A Report on the U.S. Semiconductor Industry, U.S.

Dept, of Commerce, 105-132 (1979).

53. Schafft, H. A., Semiconductor Measurement Technology: Reliability Technology for

Cardiac Pacemakers III - A Workshop Report, NBS Spec. Publ. 400-50 (1979).

Page 39
1979

54. Schafft, H. A., Standards for Photovoltaic Energy Conversion Systems, NBSIR 79-

1743 (1979).

55. Schafft, H. A., and Sawyer, D. E., A Perspective of a Workshop on Stability of (Thin

Film) Solar Cells and Materials, NBSIR 79-1778 (1979).

56. Schwarz, S. A., and Helms, C. R., A Statistical Model of Sputtering, J. Apph Phys.

50, 5492-5499 (1979).

57. Schwarz, S. A., and Helms, G. R., Model of Ion Knock-On Mixing with Application

to Si-SiOs Interface Studies, J. Vac. Sci. TechnoL 16, 781-783 (1979).

58. Sulouff, R. E., Investigation of Moisture Measurement, Failure Rate, and Leak Rate

and Study of Moisture Infusion, NBS-GCR 79-170 (1979).

59. Weglein, R. D., A Model for Predicting Acoustic Material Signatures, AppL Phys.

Letters 34, 179-181 (1979).

60. Weglein, R. D», and Wilson, R. G., An Acoustic Gray Scale for Scanning Acoustic

Microscopy and Diagnostic Ultrasound, Ultrasound Imaging 1, 89-100 (1979).

Page 40
197S

Publications for the Year 1978

1. Atalar, A., An Angular-Spectrum Approach to Contrast in Reflection Acoustic Microscope, J. Appl. Phys. 49, 5130-5139 (1978).

2. Blackburn, D. L., Photovoltaic Technique for Measuring Resistivity Variations of High

Resistivity Silicon Slices, NBS J. Res. 83, 265-271 (1978).

3. Blackburn, D. L., and Berning, D. W., Some Effects of Base Current on Transistor

Switching and Reverse-Bias Second-Breakdown, Tech. Digest, 1978 Int. Electron

Devices Meeting, Washington, D.C., Dec. 4-6, 1978, pp. 671-675 (1978).

4. Blackburn, D. L., and Larrabee, R. D., Automated Photovoltaic Technique for Nondestractively Measuring Resistivity Variations of High Resistivity Silicon Wafers. Semiconductor Characterization Techniques, 78-3, P. A. Barnes and G. A. Rozgonyi Eds.,

pp. 168-179 (Electrochemical Society, Princeton, NJ, 1978).

5. Buehler, M. G., Microelectronic Test Patterns for Use in Procuring LSICs, Proc.

Industry/Joint Services Automatic Test Conf. and Workshop, San Diego, CA, April

5-7, 1978, pp. 233-235 (1978).

6. Buehler, M. G., Limitations and Applications of the DC MOSFET Profile Method.

Semiconductor Characterization Techniques, 78-3, P. A. Barnes and G. A. Rozgonyi

Eds., pp. 241-252 (Electrochemical Society, Princeton, NJ, 1978).

7. Buehler, M. G., Grant, S. D., and Thurber, W. R., Bridge and van der Pauw Sheet

Resistors for Characterizing the Line Width of Conducting Layers, J. Electrochem.

Soc. 125, 650-654 (1978).

8. Buehler, M. G., and Thurber, W. R., An Experimental Study of Various Cross Sheet

Resistor Test Structures, J. Electrochem. Soc. 125, 645-650 (1978).

9. Bullis, W. M., Government Programs on Advanced Technology and Manufacturing

Techniques: Comments on U.S.A., Japan, and Europe, NBSXR 78-1482 (1978).

10. Bullis, W. M., Cooperative Research Can Strengthen U.S. Lead in Microelectronics,

Microelectronic Manufacturing and Testing 1 (2), 18-19 (1978).

11. Christou, A., Semiconductor Measurement Technology: Automated Scanning LowEnergy Electron Probe (ASLEEP) for Semiconductor Wafer Diagnostics, NBS Spec.

Publ. 400-30 (1978).

12. Christou, A., Nelson, G., Jenkins, W., Davey, J. E., and Wilkens, N., Characterization

of Semiconductor Wafer Defects by ASLEEP, SEM, and Scanning AES, Scanning

Electron Microscopy/ 1978 O’Hare, IL, April 17-21, 1978 1, pp. 273-282 (1978).

13. Galloway, K. F., VLSI Processing, Radiation, and Hardening, IEEE Trans. Nucl. Sci.

Page 41
1978

NS-25, 1469-1472 (1978).

14. Galloway, K. F., and Mayo, S., On the Compatibility of X-Ray Lithography and SOS

Device Fabrication, IEEE Trans. Electron Devices ED-25, 549-550 (1978).

15. Galloway, K. F., and Mayo, S., Radiation Dose at the Silicon-Sapphire Interface Due

to Electron-Beam Aluminization, J. Appl. Phys. 49, 2586-2588 (1978).

16. Grunthaner, F. J., and Maserjian, J., Chemical Structure of the Transitional Region

of the SiOa/Si Interface. The Physics of SiOa and Its Interfaces S. T. Pantelides Ed.,

pp. 389-395 (Pergamon Press, New York, NY, 1978).

17. Harman, G. G., and Cannon, C. A., The Microelectronic Wire Bond Pull Test - How

to Use It, How to Abuse It, IEEE Trans. Components, Hybrids, and Manufacturing

Technology CHMT-1, 203-210 (1978).

18. Harman, G. G., and Cannon, C. A., The Microelectronic Wire Bond Pull Test - How

to Use It, How to Abuse It, Proc. 1978 IEEE Electronic Components Conference,

Anaheim, CA, April 25, 1978, pp. 291-299 (1978).

19. Helms, C. R., Johnson, N. M., Schwarz, S. A., and Spicer, W. E., Auger Sputter

Profiling Studies of the Si-SiOa Interface. The Physics of SiO—2 and Its Interfaces,

S. T. Pantelides Ed., pp. 366-372 (Pergamon Press, New York, NY, 1978).

20. Helms, C. R., Johnson, N. M., Schwarz, S. A., and Spicer, W. E., Auger Sputter Profiling Studies of the Si-SiOj Interface. Semiconductor Characterization Techniques,

78-3, P. A. Barnes and G. A. Rozgonyi Eds., pp. 136-138 (Electrochemical Society,

Princeton, NJ, 1978).

21. Helms, C. R., Spicer, W. E., and Johnson, N. M., New Studies of the Si-SiO^ Interface

Using Auger Sputter Profiling, Solid State Communications 25, 673-676 (1978).

22. Helms, C. R., Strausser, Y. E., and Spicer, W. E., Observation of an Intermediate

Chemical State of Silicon in the Si-Si02 Interface by Auger Sputter Profiling, Appl.

Phys. Letters 33, 767-769 (1978).

23. Hilten, J. S., Lederer, P. S., Mayo-Wells, J. F., and Vezzetti, C. F., Loose-Particle

Detection in Microelectronic Devices, NBSIR 78-1590 (1978).

24. Jamba, D. M., Secondary Particle Collection in Ion Implantation Dose Measurement,

Rev. Sci. Instrum. 49, 634-638 (1978).

25. Johannessen, J. S., Spicer, W. E., Gibbons, J. F., Plummer, J. D., and Taylor, N.

J., Observation of Phosphorus Pile-Up at the SiOa-Si Interface, J. Appl. Phys. 49,

4453-4458 (1978).

26. Koyama, R. Y., Detection of Deep Levels in High Power Semiconductor Materials and

Devices, NBS J. Res. 83, 273-281 (1978).

Page 42
27. Koyama, R. Y., Wafer Mapping of Electrically Active Defects. Semiconductor Characterization Techniques, 78-3, P. A. Barnes and G. A. Rozgonyi Eds., pp. 220-228

(Electrochemical Society, Princeton, NJ, 1978).

28. Koyama, R. Y., Techniques for Characterizing Defects in Starting Silicon Wafers Using TSM. Semiconductor Characterization Techniques, 78-3, P. A. Barnes and G. A.

Rozgonyi Eds., pp. 53-60 (Electrochemical Society, Princeton, NJ, 1978).

29. Koyama, R. Y., Blackburn, D. L., and Oettinger, F. F., Measurement Techniques

for High Power Semiconductor Materials and Devices. Proc.: Light-Fired Thyristor

Workshop, EPRI Report WS 77-049 (1978).

30. Koyama, R. Y., Phillips, W. E., Myers, D. R., Liu, Y. M., and Dietrich, H. B., The

Energy Levels and the Defect Signature of Sulfur-Implanted Silicon by Thermally

Stimulated Measurements, Solid-State Electronics 21, 953-955 (1978).

31. Kuczer, P., Hook, H. O., and Goodman, A. M., A Versatile High-Voltage Bias Supply

for Extended Range MIS C(V) and G(V) Measurements, RCA Rev. 39, 309-339

(1978).

32. Larrabee, R. D., Interpretation of Hall Measurements. Semiconductor Characterization Techniques 78-3 P. A. Barnes, and G. A. Rozgonyi Eds., pp. 71-76 (Electrochemical Society, Princeton, NJ, 1978).

33. Larrabee, R. D., and Thurber, W. R., Theory and Application of a Two-Layer Hall

Technique, NBSIR 78-1553 (1978).

34. Leedy, T. F., and Liu, Y. M., Semiconductor Measurement Technology: Microelectronic Processing Laboratory at NBS, NBS Spec. Publ. 400-53 (1978).

35. Li, S. S., The Dopant Density and Temperature Dependence of Hole Mobility and

Resistivity in Boron Doped Silicon, Solid-State Electronics 21, 1109-1117 (1978).

36. Marsden, C. P., Tabulation of Published Data on Electron Devices of the U.S.S.R.

Through December 1976, NBSIR 78-1564 (1978).

37. Mattis, R. L., and Doggett, M. R., A Microelectronic Test Pattern for Analyzing

Automated Wafer Probing and Probe Card Patterns, Solid State Technology 21 (11),

76-79 (1978).

38. Mayo, S., and Evans, W. H., Thermodynamic Considerations in the Use of Polysilicon

Oxidation Tubes for Clean SiOj Film Preparation, J. Electrochem. Soc. 125, 106-110

(1978).

39. Mayo, S., Koyama, R. Y., and Leedy, T. F., Control of Mobile Ion Contamination in

Oxidation Ambients for MOS Device Processing, NBSIR 77-1404 (1978).

40. McCarthy, D., Acevedo, J., Stamps, B., Lonky, M., and Buehler, M. G., An Advanced

Integrated Test Structure for High Speed Measurement of Generation Lifetime, 1978
1978

Government Microcircuit Applications Conf. Digest of Papers, Monterey, CA, Nov.

14-16, 1978, pp. 37-38 (1978).

41. Myers, D. R., Koyama, R. Y., and Phillips, W. E., An Implantation Predeposition

Technique for the Introduction of Deep-Level Chemical Impurities, Proc. Ion Beam

Modification of Mater. Conf., Budapest, Hungary, Sept. 4-8, 1978, pp. 439-448

(1978).

42. Myers, D. R., and Phillips, W. E., Existence of an Isotope Shift for the Sulfur Deep

Level in Silicon, Appl. Phys. Letters 32, 756-758 (1978).

43. Myers, D. R., and Wilson, R. G., Alignment Effects on Implantation Profiles in Silicon,

Proc. Ion Beam Modification of Mater. Conf., Budapest, Hungary, Sept. 4=8, 1978,

pp. 103-111 (1978).

44. Novotny, D. B., and Ciarlo, D. R., Semiconductor Measurement Technology: Automated Photomask Inspection, NBS Spec. Publ. 400-46 (1978).

45. Novotny, D. B., and Ciarlo, D. R., Automated Photomask Inspection, Solid State

Technology 21 (5), 51-59 (May 1978).

46. Novotny, D. B., and Ciarlo, D. R., Automated Photomask Inspection, Solid State

Technology 21 (6), 59-67 (June 1978).

47. Nyyssonen, D., Optical Linewidth Measurements on Wafers, Proc. Soc. PhotoOptical Instrum. Engrs., Developments in Semiconductor Microlithography HI 135,

115=119 (1978).

48. Nyyssonen, D., and Jerke, J. M., Linewidth Measurement: From Fine Art to Science,

Tech. Digest, 1978 Int. Electron Devices Meeting, Washington, D. C., Dec. 4-6, 1978,

pp. 437-440 (1978).

49. Oettinger, F. F., Measurement Techniques for High Power Semiconductor Materials

and Devices: Annual Report, January 1 to December 31, 1977, Dept, of Energy Report

HCP/T6Q10/A021-02, NBSHt 78-1474 (1978).

50. Oroshnik, J., and Croll, W. K., Threshold Adhesion Failure: An Approach to Aluminum Thin-Film Adhesion Measurement Using the Stylus Method. Adhesion Measurement of Thin Films, Thick Films, and Bulk Coatings, ASTM STP 640, K. L.

Mittal Ed., pp. 158-183 (Am. Soc. for Testing and Matis., Philadelphia, PA, 1978).

51. Roitman, P., Electron Beam Induced Currents in Metal Oxide Silicon Devices, Proc.

13th Annual Conf., Microbeam Analysis Soc., Ann Arbor, MI, June 19-23, 1978, pp.

36A-36C (1978).

52. Russell, T. J., Maxwell, D. A., Reimann, C. T., and Buehler, M. G., A Microelectronic

Test Pattern for Measuring the Uniformity of an Integrated Circuit Fabrication Technology, 1978 Government Microcircuit Applications Conf. Digest of Papers, Monterey,

Page 44
CA, Nov. 14-16, 1978, pp. 33-36 (1978).

53. Sawyer, D. E., A Technique for Using An Optical Scanner to Reveal Solar Cell Defects,

Proc. 13th IEEE Photovoltaic Specialists Conference, Washington, D.C., June 5-8,

1978, pp. 1249-1250 (1978).

54. Sawyer, D, E., Kessler, H. K., and Schafft, H. A., Measurement Techniques for Solar

Cells, Quarterly Report: September 15 to December 31, 1977, NBSIR 78-1488 (1978).

55. Sawyer, D. E., Kessler, H. K., and Schafft, H. A., Measurement Techniques for Solar

Cells, Quarterly Report: January 1 to March 31, 1978, NBSIR 78-1513 (1978).

56. Scace, R. I., An Assessment of High-Power Thyristor Technology, NBSIR 78-1559

(1978).

57. Schafft, H. A., Performance Criteria for Photovoltaic Power Conditioning, Control,

and Storage, Proc. DOE Photovoltaic Tech. Development & Applications Program

Rev., Arlington, VA, Nov. 7-9, 1978, pp. 2-29 - 2-51 (1978).

58. Schwarz, S. A., Helms, G. R., and Spicer, W. E., High Resolution Auger Sputter Profiling Study of the Effect of Phosphorus Pileup on the Si-SiC>2 Interface Morphology,

J. Vac. Sci. Technol. 15, 227-230 (1978).

59. Stach, J., Das, M. B., and Tressler, R. E., Development of Measurement Techniques

for Monitoring Chemical Purity of Materials Used in Digital IC Processing, NBS-GCR

78-134 (1978).

60. Strausser, Y. E., and Majumder, K. S., Chemical Structure of the AI/S1 O2 Interface,

J. Vac. Sci. Technol. 15, 238-239 (1978).

61. Strausser, Y. E., Scheibner, E. J., and Johannessen, J. S., Observations of A1203 and

Free Silicon in the Interface Between Aluminum Films and SiO?, Thin Solid Films 52,

203-214 (1978).

62. Sulouff, R. E., A Study of Leak Rate Versus Reliability of Hybrid Packages, Proc.

1978 hit. Microelectronics Symp., Minneapolis, MN, Sept. 25-27, 1978, pp. 121-124

(1978).

63. Swyt, D. A., Design of a Pattern on a Photomask-Like Physical Standard for Evaluation and Calibration of LineWidth-Measuring Systems, Solid State Technology 21 (1),

35-42 (1978).

64. Swyt, D. A., Rosberry, F. W., and Nyyssonen, D., Photomask Linewidth Measurement, Circuits Manufacturing 18 (9), 20 (1978).

65. Thurber, W. R., and Buehler, M. G., Semiconductor Measurement Technology: Microelectronic Test Pattern NBS-4, NBS Spec. Publ. 400-32 (1978).

66.

Thurber, W. R., and Carpenter, B. S., Boron Determination in Silicon by the Nuclear
1978

Track Technique, J. Electrochem. Soc. 125, 654-657 (1978).

67. Thurber, W. R., Mattis, R. L., and Liu, Y. M., Resistivity-Dopant Density Relationship for Silicon. Semiconductor Characterization Techniques, 78-3, P. A. Barnes and

G. A. Rozgonyi Eds., pp. 81-92 (Electrochemical Society, Princeton, NJ, 1978).

68. Weglein, R. D., Gray Scale for Scanning Acoustic Microscopy, Electron. Lett. 14,

656-657 (1978).

69. Weglein, R. D., and Wilson, R. G., Characteristic Material Signatures by Acoustic

Microscopy, Electron. Lett. 14, 352-354 (1978).

70. Wilson, R. G., and Comas, J., Correlation of Atomic Distribution and Implantation

Induced Damage Profiles in Be-Ion Implanted Silicon, Proc. Ion Beam Modification

of Mater. Conf„, Budapest, Hungary, Sept. 4-8, 1978, pp. 547-556 (1978).

71. Wilson, R. G., Dunlap, H. L. s Jamba, D. M„, and Myers, D. R., Semiconductor Measurement Technology: Angular Sensitivity of Controlled Implanted Doping Profiles,

NBS Spec. Pubh 400-49 (1978).

72. Zanzucchi, P. J., and Duffy, M. T., Surface Damage and the Optical Reflectance of

Single-Crystal Silicon, Appl. Optics 17, 3477-3481 (1978).

73. Zanzucchi, P. J., Duffy, M. T., and Alig, R. C., Optical Reflectance Method for

Determining Surface Quality of Sapphire, J. Electrochem. Soc. 125, 299-305 (1978).

Page 46
1977

Publications for the Year 1977

1. Atalar, A., Quate, C. F., and Wickramasinghe, H. K., Phase Imaging in Reflection

with the Acoustic Microscope, AppL Phys. Letters 31, 791-793 (1977).

2. Blackburn, D. L., Semiconductor Measurement Technology: Safe Operating Area

Limits for Power Transistors - Videotape Script, NBS Spec. Publ. 400-44 (1977).

3. Blackburn, D. L., Koyama, R. Y., Oettinger, F. F., and Rogers, G. J., Measurement

Techniques for High Power Semiconductor Materials and Devices: Annual Report,

January 1 to December 31, 1976, ERDA Report CONS/3800-2, NBSIR 77-124 (1977).

4. Blackburn, D. L., and Rubin, S., A Nondestructive Method for the Determination of

Forward-Biased Safe-Operating-Area Limits for Power Transistors, PESO ’77 Record,

IEEE Power Electronics Specialists Conference 1977, Palo Alto, CA, June 14-16, 1977,

pp. 17-22 (1977).

5. Buehler, M. G., Dopant Profiles Determined from Enhancement Mode MOSFET DC

Measurements, Appl. Phys. Letters 31, 848-850 (1977).

6. Buehler, M. G., Microelectronic Test Patterns for Use in Procuring Custom and Highly

Reproducible Integrated Circuits. Proc. Symp. on Utilization of LSICs in Military

Systems, Arlington, VA, Aug. 9-11, 1977, pp. ffil02-HJ117 (1977).

7. Buehler, M. G., and Sawyer, D. E., Microelectronic Test Patterns Aid Production of

Custom ICs, Circuits Manufacturing 17 (2), 46-56 (1977).

8. Buehler, M. G., and Thurber, W. R., Measurement of the Resistivity of a Thin Square

Sample with a Square Four-Probe Array, Solid-State Electronics 20, 403-406 (1977).

9. Bullis, W. M., The NBS Semiconductor Technology Program, Proc. Symp. on Utilization of LSICs in Military Systems, Arlington, VA, Aug. 9-11, 1977, pp. III87 - IH101 (1977).

10. Bullis, W. M., and Galloway, K. F., Semiconductor Electronics at the National Bureau of Standards: Programs and Opportunities Paper DC-I, Proc. 2nd IEEE (GPHP)/XSHM Univ/Industry/ Govt Microelectronics Symp., Albuquerque, NM, Jan.

3-5, 1977, (1977).

11. Bullis, W. M., and Vieweg-Gutberlet, F. G., Current Trends in Silicon Characterization Techniques. Semiconductor Silicon/1977 H. R. Huff, and E. Sirtl Eds., pp.

360-366 (Electrochemical Society, Princeton, NJ, 1977).

12. Comizzoli, R. B., Nondestructive, Reverse Decoration of Defects in IC Passivation

Overcoats, J. Electrochem. Soc. 124, 1087-1095 (1977).

13. David, J. M., and Buehler, M. G., A Numerical Analysis of Various Cross Sheet

Page 47
1977

Resistor Test Structures, Solid-State Electronics 20, 539-543 (1977).

14. Devaney, J. R., Leedy, K. O., and Keery, W. J., Semiconductor Measurement Technology: Notes on SEM Examination of Microelectronic Devices, NBS Spec. Publ. 400-35

(1977).

15. Dobrott, R. D., Keenan, J. A., and Larrabee, G. B., Ion Microprobe Analysis of

Integrated Circuit Structures, 15th Annual Proceedings, Reliability Physics 1977, Las

Vegas, NV, April 12-14, 1977, pp. 54-60 (1977).

16. Ehrstein, J. R., Effect of Specimen Preparation on the Calibration and Interpretation

of Spreading Resistance Measurements. Semiconductor Silicon/ 1977, H. R. Huff and

E. Sirtl Eds., pp. 377-386 (Electrochemical Society, Princeton, NJ, 1977).

17. Erickson, N. E., ESCA Studies of Clean Si (111) Surfaces, Physica Scripta 16, 462-465

(1977).

18. French, J. C.. The Measurement Challenge in Electronic Technology. Dimensions/NBS

61 (2), 12-15 (1977).

19. Galloway, K. F., and Roitman, P., Some Aspects of Using a Scanning Electron Microscope for Total Dose Testing, NBSIR 77-1235 (1977).

20. Galloway, K. F., and Roitman, P., Important Considerations for SEM Total Dose

Testing, IEEE Trans. Nucl. Sci. NS-24, 2066-2070 (1977).

21. Goodman, A. M., Semiconductor Measurement Technology: Suppression of Premature Dielectric Breakdown for High-Voltage Capacitance Measurements, NBS Spec.

PubL 400-37 (1977).

22. Goodman, A. M., Semiconductor Measurement Technology: A 25-kV Bias-Isolation

Unit for 1-MHz Capacitance and Conductance Measurements, NBS Spec. Publ. 400-

40 (1977).

23. Goodman, A. M., Suppression of Premature Dielectric Breakdown for High-Voltage

Capacitance Measurements, RCA Rev. 38, 436-442 (1977).

24. Goodman, A. M., A 25-kV Bias-Isolation Unit for 1-MHz Capacitance and Conductance Measurements, RCA Rev. 38, 512-532 (1977).

25. Goodman, A. M., and Weitzel, C. E., The Effect of Electron-Beam Aluminization on

the Si-Sapphire Interface, Appl. Phys. Letters 31, 114-117 (1977).

26. Grunthaner, F. J., and Maserjian, J., Experimental Observations of the Chemistry of

the SiOz/Si Interface, IEEE Trans. Nucl. Sci. NS-24, 2108-2112 (1977).

27. Ham, W. E., Intrachip and Spatial Parametric Integrity - An Important Part of IC

Process Characterization, Tech. Digest, Int. Electron Devices Meeting, Washington,

D.C., Dec. 5-7, 1977, pp. 406-409 (1977).

Page 48
28. Harman, G. G., The Use of Acoustic Emission in a Test for Beam-Lead, TAB, and

Hybrid Chip Capacitor Bond Integrity, IEEE Trans. Parts, Hybrids, and Packaging

FHP-13, 116-127 (1977).

29. Harman, G. G., and Albers, J., The Ultrasonic Welding Mechanism as Applied to

Aluminum- and Gold- Wire Bonding in Microelectronics, IEEE Trans. Parts, Hybrids,

and Packaging PHP-13, 406-412 (1977).

30. Helms, C. R., Garner, C. M., Miller, J., Lindau, L, Schwarz, S. A., and Spicer,

W. E., Studies of Si/Si02 Interfaces by Auger Sputter Profiling and Photoelectron

Spectroscopy Using Synchrotron Radiation, Froe. 7th hat. Vac. Congr. 3rd lot.

Conf. Solid Surfaces, Vienna, Sept. 1977, pp. 2241-2243 (1977).

31. Jamba, D. M., Semiconductor Measurement Technology'. Some Aspects of Dose Measurement for Accurate Ion Implantation, NBS Spec. Publ. 400-39 (1977).

32. Jerke, J. M., Hartman, A. W., Nyyssonen, D., Swing, R. E., Young, R. D., and Keery,

W. J., Comparison of Linewidth Measurements on an SEM/Interferometer System

and an Optical Linewidth-Measuring Microscope, Proe. Soc. Photo- Optical Instrum.

EngrSo, Developments in Semiconductor Microlithography, II, 100, 37-45 (1977).

33. Johannessen, J. S., Helms, C. R., Spicer, W. E., and Strausser, Y. E., Auger Depth

Profiling of MNOS Structures by Ion Sputtering, IEEE Trans. Electron Devices ED24, 547-551 (1977).

34. Kern, W., and Comizzoli, R. B., Semiconductor Measurement Technology: Techniques

for Measuring the Integrity of Passivation Overcoats on Integrated Circuits, NBS Spec.

Publ 400-31 (1977).

35. Kern, W., and Comizzoli, R. B., New Methods for Detecting Structural Defects in

Glass Passivation Films, J. Vac. Sci. Technol 14, 32-39 (1977).

36. Kompfner, R., and Quate, C. F., Acoustic Radiation and Its Use in Microscopy,

Physics in Technology 8, 231-237 (1977).

37. Kuczer, P., Hook, H. O., and Goodman, A. M., Semiconductor Measurement Technology: A Versatile High-Voltage Bias Supply for Extended Range MIS C(V) and G(V)

Measurements, NBS Spec. Publ 400-41 (1977).

38. Leedy, K. O., Measurement of Transistor Collector-Emitter Saturation Voltage, NBSXR 77-1231 (1977).

39. Leedy, K. O., A Bibliography on Electron Beam Induced Current Analysis of Semiconductor Devices, Solid State Technology 20 (2), 45-48 (1977).

40. Li, S. S., Semiconductor Measurement Technology: The Dopant Density and Temperature Dependence of Electron Mobility and Resistivity in N-Type Silicon, NBS Spec.

Publ. 400-33 (1977).
1977

41. Li, S. S., and Thurber, W. R., The Dopant Density and Temperature Dependence

of Electron Mobility and Resistivity in n-Type Silicon, Solid-State Electronics 20,

609-616 (1977).

42. Mattis, R. L., and Buehler, M. G., A New Method for Calculating Background Dopant

Density from p-n Junction Capacitance-Voltage Measurements, J. Electrochem. Soc.

124, 1918=1923 (1977).

43. Mayo, S., and Evans, W. H., Development of Sodium Contamination in Semiconductor

Oxidation Atmospheres at 1000C, J. Electrochem. Soc. 124, 780-785 (1977).

44. Novotny, D. B., Sensitometry of Photoresists for Microelectronics, Photographic Sci- ence and Engineering 21, 351-355 (1977).

45. Nyyssonen, D., Linewidth Measurement with an Optical Microscope: The Effect of

Operating Conditions on the Image Profile, Appl. Optics 16, 2223-2230 (1977).

46. Nyyssonen, D., Optical Linewidth Measurements on Silicon and Iron-Oxide Photomasks, Proc. Soc. Photo-Optical Instrum. Engrs., Developments in Semiconductor

Microlithography, H, 100, 127-134 (1977).

47. Quale, G. F., A Scanning Acoustic Microscope. Semiconductor Silicon/1977, H. R.

Huff and E. Sirtl Eds., pp. 422-430 (Electrochemical Society, Princeton, NJ, 1977).

48. Rubin, S., and Blackburn, D. L., A Test Unit for the Nondestructive Determination of Forward-Biased Safe-Operating-Area Limits for Power Transistors, Conference

Record, IEEE IAS Annual Meeting, Los Angeles, CA, Oct. 3-6, 1977, pp. 666-673

(1977).

49. Russell, T. J., Leedy, T. F., and Mattis, R. L., A Comparison of Electrical and Visual

Alignment Test Structures for Evaluating Photomask Alignment in Integrated Circuit

Manufacturing, Tech. Digest, Xnt. Electron Devices Meeting, Washington, D.C., Dec.

5-7, 1977, pp. 7A-7F (1977).

50. Ruthberg, S., Hermetic Test Procedures and Standards for Semiconductor Electronics.

ASTM STP 624, Nondestructive Testing Standards - A Review, H. Berger Ed., pp.

246-259 (Am. Soc. for Testing and Matls., Philadelphia, PA, 1977).

51. Ruthberg, S., Gas Infusion into Doubled Hermetic Enclosures, IEEE Trans. Parts,

Hybrids, and Packaging PHP-13, 110-116 (1977).

52. Ruthberg, S„, Neff, G. R., and Martin, B. D., Radioisotope Hermetic Test Precision,

Proc. 1977 Xnt. Microelectronics Symp., Baltimore, MD, Oct. 24-26, 1977, pp. 131-

137 (1977).

53. Sawyer, D. E„, Solar Cell Measurement Technique Development and Other Services,

Proc. Photovoltaies Program Semi-Annual Review, Adv. Materials R&D Branch,

Golden, CO, Oct. 4-6, 1977, pp. 708-713 (1977).

Page 50
54. Sawyer, D. E., and Berning, B. W., Semiconductor Measurement Technology: A Laser

Scanner for Semiconductor Devices, NBS Spec. Publ. 400-24 (1977).

55. Sawyer, D. E., Berning, B. W., and Lewis, D. C., Laser Scanning of Active Integrated

Circuits and Discrete Semiconductor Devices, Solid State Technology 20 (6), 37ff

(1977).

56. Schafft, H. A., Semiconductor Measurement Technology: Reliability Technology for

Cardiac Pacemakers II - A Workshop Report, NBS Spec. Pubh 400-42 (1977).

57. Spicer, W. E., Lindau, L, and Helms, C. R., Frontiers in Surface and Interface Analysis, R/D: Research/Development 28(12), 20-31 (1977).

58. Swyt, D. A., An NBS Physical Standard for the Calibration of Photomask Linewidth

Measuring Systems, Proe. Soc. Photo-Optical Instrum, Engrs., Effective Utilization

of Optics in Quality Assurance 129, 98-105 (1977).

59. Swyt, D. A., and Rosberry, F. W., A Comparison of Some Optical Microscope Measurements of Photomask Linewidths, Solid State Technology 20 (8), 70-75 (1977).

60. Swyt, D. A., Rosberry, F. W., and Nyyssonen, B., Calibration of Optical Microscopes

for Photomask Linewidth Measurements, Proc. Microelectronics Seminar - Interface

77, Monterey, CA, Oct. 5-7, 1977, pp. 131-144 (1977).

61. Tressler, R. E., Stach, J., and Metz, D., Gas Phase Composition Considerations in the

Thermal Oxidation of Silicon in Cl-H-0 Ambients, J. Electrochem. Soc. 124, 607-609

(1977).

62. Weglein, R. D., and Wilson, R. G., Image Resolution of the Scanning Acoustic Microscope, Appl. Phys. Letters 31, 793-796 (1977).

63. Weglein, R. D., Wilson, R. G., and Boimell, D. M., Scanning Acoustic Microscopy -

Application to Fault Detection, 15th Annual Proceedings, Reliability Physics 1977,

Las Vegas, NV, April 12-14, 1977, pp. 37-43 (1977).

64. Wilson, R. G., Dunlap, H L., and Jamba, D. M.., Angular Sensitivity of Controlled

Implanted Doping Profiles. Semiconductor Silicon/1977, H. R. Huff and E. Sirtl Eds.,

pp. 1023-1034 (Electrochemical Society, Princeton, NJ, 1977).

65. Wilson, R. G., Weglein, R. D., and Bonnell, D. M., Scanning Acoustic Microscopy for

Integrated Circuit Diagnostics. Semiconductor Silicon/1977, H. R. Huff and E. Sirtl

Eds., pp. 431-440 (Electrochemical Society, Princeton, NJ, 1977).

66. Young, R. D., Length Calibrations in the Micrometer and Sub-Micrometer Range,

Ann. CIRP 25, 245-250 (1977).
1976

Publications for the Year 1976

1. Albers, J., Semiconductor Measurement Technology: The Destructive Bond Pull Test,

NBS Spec. Publ. 400-18 (1976).

2. Blackburn, D. L., Rubin, S., and Rogers, G. J., Measurements of Power Transistor

Thermal Instabilities, Stable Hot-Spots, and Second-Breakdown, Tech. Digest, 1976

Xnt. Electron Devices Meeting, Washington, D.C., Dec. 6-8, 1976, pp. 151-154 (1976).

3. Buehler, M. G., Semiconductor Measurement Technology: Microelectronic Test Pattern NBS-3 for Evaluating the Resistivity-Dopant Density Relationship of Silicon,

NBS Spec. Publ. 400-22 (1976).

4. Buehler, M. G., Semiconductor Measurement Technology: Defects in PN Junctions

and MOS Capacitors Observed Using Thermally Stimulated Current and Capacitance

Measurements - Videotape Script, NBS Spec. Publ. 400-26 (1976).

5. Buehler, M. G., and Phillips, W. E., A Study of the Gold Acceptor in a Silicon

p-fn Junction and an n-type MOS Capacitor by Thermally Stimulated Current and

Capacitance Measurements, Solid-State Electronics 19, 777-788 (1976).

6. Buehler, M. G., and Sawyer, D. E., Microelectronic Test Patterns for Use in Procuring

Reliable, Custom Integrated Circuit Chips, 1976 Government Microcircuit Applications Conf. Digest of Papers, Orlando, FL, Nov. 9-11, 1976, pp. 62-65 (1976).

7. Buehler, M. G., and Thurber, W. R., A Planar Four-Probe Test Structure for Measuring Bulk Resistivity, IEEE Trans. Electron Devices ED-23, 968-974 (1976).

8. Galloway, K. F., and Buehler, M. G., The Application of Test Structures and Test

Patterns to the Development of Radiation Hardened Integrated Circuits: A Review,

NBSXR 76-1093 (1976).

9. Galloway, K. F,, Leedy, K. O., and Keery, W. J., Electron-Beam-Induced Currents

in Simple Device Structures, IEEE Trans. Parts, Hybrids, and Packaging PHP-12,

231-236 (1976).

10. Galloway, K. F., Leedy, K. Q., and Keery, W. J., Electron-Beam-Induced Currents in

Simple Device Structures, Proc. 26th Electronic Components Conf., San Francisco,

CA, April 26-28, 1976, pp. 257-262 (1976).

11. Goodman, A. M., Semiconductor Measurement Technology: Safe Operation of Capacitance Meters Using High Applied-Bias Voltage, NBS Spec. Publ. 400-34 (1976).

12. Goodman, A. M., Safe Operation of Capacitance Meters Using High Applied-Bias

Voltage, RCA Rev. 37, 491-514 (1976).

Page 52
13. Harman, G. G., The Use of Acoustic Emission in a Test for Beam Lead Bond Integrity,

14th Annual Proceedings, Reliability Physics 1976, Las Vegas, NV, April 20-22, 1976,

pp. 86-97 (1976).

14. Hower, P. L., Blackburn, B. L., Oettinger, F. F., and Rubin, S., Stable Hot Spots and

Second Breakdown in Power Transistors, PESO 5 76 Record, IEEE Power Electronics

Conference 1976, Cleveland, OH, June 8-10, 1976, pp. 234-246 (1976).

15. Jerke, J. M., Hartman, A. W., Nyyssonen, D., Rosberry, F. W., Swing, R. E., Swyt,

D. A., and Young, R. D., Accurate Linewidth Measurements at the National Bureau

of Standards, Proc. Microelectronics Seminar - Interface 5 76, Monterey, CA, Oct.

3-5, 1976, pp. 51-59 (1976).

16. Johannessen, J. S„, Spicer, W. E,, and Strausser, Y, E., Use of Auger Electron Spectroscopy to Determine the Structure of Silicon Oxide Films, Semiconductor Measurement Technology: ARPA/NBS Workshop IV, Surface Analysis for Silicon Devices,

NBS Spec. Pubh 400-23 (1976).

17. Johannessen, J. S., Spicer, W. E., and Strausser, Y. E., Auger Depth Profiling of

Interfaces in MOS and MNOS Structures, J. Vac. Sci. TechnoL 13, 849-855 (1976).

18. Johannessen, J. S„, Spicer, W. E., and Strausser, Y. E., A Study of the Chemical

Composition of MOS and MNOS Structures by Auger Electron Spectroscopy, Thin

Solid Films 32, 311-314 (1976).

19. Kasdan, H. L., and George, N., Linewidth Measurement by Diffraction Pattern Analysis, Proc. Soc. Photo-Optical Instrum. Engrs., Developments in Semiconductor

Microlithography 80, 54-63 (1976).

20. Keery, W. J., Leedy, K. O., and Galloway, K. F., Electron Beam Effects on Microelectronic Devices, Scanning Electron Microscopy/ 1976, Toronto, Canada, April 5-9,

1976, pp. 507-514 (1976).

21. Kenney, J. M., Semiconductor Measurement Technology: Permanent Damage Effects of Nuclear Radiation on the X-Band Performance of Silicon Schottky-Barrier

Microwave Mixer Diodes, NBS Spec. PubL 400-7 (1976).

22. Lieberman, A. G., Semiconductor Measurement Technology: ARPA/NBS Workshop

TV. Surface Analysis for Silicon Devices, NBS Spec. PubL 400-23 (1976).

23. Lieberman, A. G., Introductory Concepts for Silicon Surface Analysis, Semiconductor

Measurement Technology: ARPA/NBS Workshop IV, Surface Analysis for Silicon

Devices, NBS Spec. PubL 400-23 (1976).

24. Mayo, S., Galloway, K. F., and Leedy, T. F., Radiation Dose Due to Electron-Gun

Metallization Systems, IEEE Trans. NucL Sci. NS-23, 1875-1880 (1976).
1976

25. Mayo, S., Keller, R. A., Travis, J. C., and Green, R. B., Detection of Sodium Trace

Contamination in Furnace Atmospheres at 1000C, J. AppL Phys. 47, 4012-4016

(1976).

26. Novotny, D. B., Photoresist Exposure - Measurement and Control, Proc. Soc. PhotoOptical Instrum. Engrs., Developments in Semiconductor Microlithography 80, 9-13

(1976).

27. Oettinger, F. F., Blackburn, D. L., and Rubin, S., Thermal Characterization of Power

Transistors, IEEE Trans. Electron Devices ED-23, 831-838 (1976).

28. Sawyer, D. E., and Berning, D. W., Semiconductor Measurement Technology: Laser

Scanning of Active Semiconductor Devices - Videotape Script, NBS Spec. Publ. 400-

27 (1976).

29. Sawyer, D. E., and Berning, D. W., Thermal Mapping of Transistors With a Laser

Scanner, Proc. IEEE 64, 1634-1635 (1976).

30. Sawyer, D. E., and Berning, D. W., Mapping Nonlinearities Over the Active Regions

of Semiconductor Devices, Proc. IEEE 64, 1635-1637 (1976).

31. Sawyer, D. E., and Berning, D. W., Laser Scanning of MOS IC’s Reveals Internal

Logic States Nondestructive^, Proc. IEEE 64, 393-394 (1976).

32. Schafffc, Ho A., Semiconductor Measurement Technology: ARPA/NBS Workshop III. Test Patterns for Integrated Circuits, NBS Spec. Publ. 400-15 (1976).

33. Schafft, H. A., Semiconductor Measurement Technology: NBS/FDA Workshop, Reliability Technology for Cardiac Pacemakers 400-28 (1976).

34. Strausser, Y. E., and Johannessen, J. S., An Auger Electron Spectroscopy Study

of Si Spectra from SiO, SiOa, and S^N,*, Semiconductor Measurement Technology:

ARPA/NBS Workshop IV, Surface Analysis for Silicon Devices, NBS Spec. Publ.

400-23 (1976).

35. Swing, R. E., The Theoretical Basis of a New Optical Method for the Accurate Measurement of Small Line-Widths, Proc. Soc. Photo-Optical Instrum. Engrs. Developments in Semiconductor Microlithography 80, 65-77 (1976).

36. Swyt, D. A., NBS Program in Photomask Linewidth Measurements, Solid State Technology 19 (4), 55-61 (1976).

37. Taylor, N. J., Johannessen, J. S., and Spicer, W. E., Crater-Edge Profiling in Interface

Analysis Employing Ion-Beam Etching and AES, AppL Phys. Letters 29, 497-499

(1976).

38. Weglein, R. B., Acoustic Properties of Sputtered Glass at Microwave Frequencies,

Solar Cells 29, 277-279 (1976).

Page 54
1976

39. Wilson, R. G., Planar and Axial Channeling of 800 keV As in <110>Silicon, Apph

Phys. Letters 29, 770-772 (1976).

Page 55
Publications for the Year 1975

1. Blackburn, D. L., An Electrical Technique for the Measurement of the Peak Junction

Temperature of Power Transistors, 13th Annual Proceedings, Reliability Physics 1975,

Las Vegas, NV, April 1-3, 1975, pp. 142-150 (1975).

2. Blackburn, D. L., and Oettinger, F. F., Transient Thermal Response Measurements of

Power Transistors, IEEE Trans. Industrial Electronics and Control Instrumentation

IECI-22, 134-141 (1975).

3. Buehler, M. G., David, J. M., Mattis, R. L., Phillips, W. E., and Thurber, W. R.,

Semiconductor Measurement Technology: Planar Test Structures for Characterizing

Impurities in Silicon, NBS Spec. Publ. 400-21 (1975).

4. Ciarlo, D, R., Schultz, P. A., and Novotny, D. B., Automated Inspection of IC Photomasks, Proe. Soc. Photo-Optical Instrum. Engrs., Photofabrication Imagery 55,

84-89 (1975).

5. Duffy, M. To, Zanzucchi, P. J., and Cullen, G. W., Method to Determine Quality of

Sapphire, NB3-GCR 76-61 (1975).

6. Galloway, K. F., Keery, W. J., and Leedy, K. O., Integrated Circuit Damage Resulting

from SEM Examination, Proc. 25th Electronic Components Conf., Washington, D.C.,

May 12-14, 1975, pp. 263-266 (1975).

7. Jerke, J. M., Semiconductor Measurement Technology: Optical and DimensionalMeasurement Problems with Photomasking in Microelectronics, NBS Spec. Publ.

400-20 (1975).

8. Jesch, R. L., and Hoer, C. A., Characterization of a High Frequency Probe Assembly

for Integrated Circuits Measurements, NBS Tech. Note 663 (1975).

9. Johannessen, J. S., Chemical Shifts of Auger Lines Seen in SiO* and SiQ^-Si Interfaces,

Faraday Discuss. Chem. Soc. 60, 306-309 (1975).

10. Johannessen, J. S., Electron Beam Effects in AES of Silicon Oxides, Faraday Discuss.

Chem. Soc. 60, 313-316 (1975).

11. Johannessen, J. S., Spicer, W. E., and Strausser, Y. E., Phase Separation in Silicon

Oxides as Seen by Auger Electron Spectroscopy, Appl. Phys. Letters 27, 452-454

(1975).

12. Kraft, R., Finite Difference Techniques for Diffusion and Redistribution Problems

with Segregation-Type Boundary Conditions, Proc. AICA Int. Symp. on Computer

Methods for Partial Differential Equations, Bethlehem, PA, June 17-19, 1975, pp.

328-334 (1975).
1975

13. Lewis, D. C., On the Determination of the Minority Carrier Lifetime from the Reverse

Recovery Transient of pnR Diodes, Solid-State Electronics 18, 87-91 (1975).

14. Lieberman, A. G., Problems in Using Surface Analysis Techniques for the Depth Profiling of Microelectronic Materials, Tech. Digest, 1975 Int. Electron Devices Meeting,

Washington, DC, Dec. 1-3, 1975, pp. 126-129 (1975).

15. Mattis, R. L., and Buehler, M. G., Semiconductor Measurement Technology: A BASIC Program for Calculating Dopant Density Profiles from Capacitance-Voltage Data,

NBS Spec. Publ. 400-11 (1975).

16. Pease, R. L., Galloway, K. F., and Stehlin, R. A., Radiation Damage to Integrated

Injection Logic Cells, IEEE Trans. Nucl. Phys. NS-22, 2600-2604 (1975).

17. Rogers, G. J„, Sawyer, D. E„, and Jesch, R. L., Semiconductor Measurement Technology: Measurement of Transistor Scattering Parameters, NBS Spec. Publ. 400-5

(1975).

18. Rubin, S., Thermal Resistance Measurements on Monolithic and Hybrid Darlington

Power Transistors, PESC ’75 Record, IEEE Power Electronics Specialists Conf., 1975,

Culver City, CA, June 9-11, 1975, pp. 252-261 (1975).

19. Rudenberg, H. G., Automated Integrated Circuit Processing and Assembly, NBS-GCR

76-64 (1975).

20. Sawyer, D. E., and Beraing, D. W., Laser Scanning of Active Semiconductor Devices,

Tech. Digest, 1975 Int. Electron Devices Meeting, Washington, D.C., Dec. 1-3, 1975,

pp. 111-114 (1975).

21. Sher, A. H., Semiconductor Measurement Technology: Improved Infrared Response

Technique for Detecting Defects and Impurities in Germanium and Silicon p-i-n Diodes,

NBS Spec. Publ. 400-13 (1975).

22. Steigerwalt, S. T., and Lagnado, I., The CCD as a Test Structure for Semiconductor

Process Control, Microelectronics J. 7, 23-29 (1975).

Page 57
1974

Publications for the Year 1974

1. Blackburn, D. L., and Oettinger, F. F., Transient Thermal Response Measurements of

Power Transistors, PESO ’74 Record, IEEE Power Electronics Specialists Conference

1974, Murray Hill, NJ, June 10-12, 1974, pp. 140-148 (1974).

2. Buehler, M. G., Semiconductor Measurement Technology: Microelectronic Test Patterns: An Overview, NBS Spec. PubL 400-6 (1974).

3. Bullis, W. M., Standard Measurements of the Resistivity of Silicon by the Four-Probe

Method, NBSER 74-496 (1974).

4. Ehrstein, J. R., Improved Surface Preparation for Spreading Resistance Measurements

on p-Type Silicon, Semiconductor Measurement Technology: Spreading Resistance

Symposium, NBS Spec. Pubi. 400-10 (1974).

5. Ehrstein, J. R.s Semiconductor Measurement Technology: Spreading Resistance Symposium, NBS Spec. PubL 400-10 (1974).

6. Forman, R. A., Thurber, W. R., and Aspnes, D. E., Second Indirect Band Gap in

Silicon, Solid-State Communications 14, 1007-1010 (1974).

7. Harman, G. G., Semiconductor Measurement Technology: Microelectronic Ultrasonic

Bonding, NBS Spec. Publ. 400-2 (1974).

8. Harman, G. G., Metallurgical Failure Modes of Wire Bonds, presented as part of a Workshop on Metallurgical Failure Modes, 12th Annual Proceedings, Reliability

Physics 1974, Las Vegas, NV, April 2-4, 1974, pp. 131-141 (1974).

9. Harman, G. G., A Metallurgical Basis for the Non-Destructive Bond Pull-Test, 12th

Annual Proceedings, Reliability Physics 1974, Las Vegas, NV, April 2-4, 1974, pp.

205-210 (1974).

10. Sandow, P. M., A Transistor with Simultaneously Diffused Emitter and Base, SolidState Electronics 17, 404-405 (1974).

11. Schafft, H. A., Semiconductor Measurement Technology: ARPA/NBS Workshop I. Measurement Problems in Integrated Circuit Processing and Assembly, NBS Spec.

Pubi. 400-3 (1974).

12. Schafft, H. A., Semiconductor Measurement Technology: ARPA/NBS Workshop n. Hermeticity Testing for Integrated Circuits, NBS Spec. Publ. 400-9 (1974).

13. Sher, A. H., Semiconductor Nuclear Radiation Detector Studies - A Final Report,

NBSXR 74-626 (1974).

Page 58
1973

Publications for the Year 1973

1. Buehler, M. G., Thermally Stimulated Measurements: The Characterization of Defects in Silicon p-n Junctions. Semiconductor Silicon/1973, H. R. Huff and R. R.

Burgess Eds., pp. 549=560 (Electrochemical Society, Princeton, NJ, 1973).

2. Harman, G. G., and Kessler, H. K„, The Use of Capacitor Microphones to Study

Vibrations in Microelectronic Ultrasonic Bonding Equipment, Ultrasonics 11 (1), 5-6

(1973).

3. Kessler, H. K., and Sher, A. H„, Microelectronic Interconnection Bonding with Ribbon

Wire, NBS Tech. Note 767 (1973).

4. Leedy, K. O., Scanning Electron Microscope Examination of Wire Bonds from HighReliability Devices, NBS Tech. Note 785 (1973).

5. Oettinger, F. F„, and Gladhill, R. L., Thermal Response Measurements for Semiconductor Device Die Attachment Evaluation, Tech. Digest, 1973 Int. Electron Devices

Meeting, Washington, DC, Dec. 3-4, 1973, pp. 47-50 (1973).

6. Sawyer, D. E„, Rogers, G. J„, and Huntley, L. F., Measurement of Transit Time and

Related Transistor Characteristics, AFWL TR 73-54 (1973).

7o Sehafft, H. A., Methods for Testing Wire-Bond Electrical Connections, NBS Tech.

Note 786 (1973).

8. Sehafft, H. A., Failure Analysis of Wire Bonds, 11th Annual Proceedings, Reliability

Physics 1973, Las Vegas, NV, April 3-5, 1973, pp. 98-104 (1973).

9. Thurber, W. R., Lewis, D. C., and Bullis, W. M., Resistivity and Carrier Lifetime in

Gold-Doped Silicon, AFCRL-TR 73-0107 (1973).

Page 59
1972

Publications for the Year 1972

1. Blackburn, D. L., Schafft, H. A., and Swartzendruber, L. J., Nondestructive Photovoltaic Technique for the Measurement of Resistivity Gradients in Circular Semiconductor Wafers, J. Electrochem. Soc. 119, 1773-1778 (1972).

2. Harman, G. G., and Leedy, K. O., An Experimental Model of the Microelectronic

Ultrasonic Wire Bonding Mechanism, 10th Annual Proceedings, Reliability Physics

1972, Las Vegas, NV, April 5-7, 1972, pp. 49-56 (1972).

3. Liu, Y. M., and Coleman, J. A., Radiation Damage Effects by Electrons, Protons, and

Neutrons in Si(Li) Detectors, IEEE Trans. Nuch Sci. NS-19, 346-352 (1972).

4. Mattis, R. L., and Baroody, A. J., Carrier Lifetime Measurement by the Photoconductive Decay Method, NBS Tech. Note 736 (1972).

5. Oettinger, F. F., and Rubin, S„, The Use of Current Gain as an Indicator for the

Formation of Hot Spots due to Current Crowding in Power Transistors, 10th Annual

Proceedings, Reliability Physics 1972, Las Vegas, NV, April 5-7, 1972, pp. 12-18

(1972).

6. Phillips, W. E., Interpretation of Steady-State Surface Photovoltage Measurements in

Epitaxial Semiconductor Layers, Solid-State Electronics 15, 1097-1102 (1972).

7. Sawyer, D. E., Prevalent Error Sources in Transistor Delay-Time Measurements, IEEE

Trans. Nucl. Sci. NS-19, 121-124 (1972).

8. Schafft, H. A., Wire-Bond Electrical Connections: Testing, Fabrication and Degradation - A Bibliography 1957-1971, NBS Tech. Note 593 (1972).

9. Schafft, H. A., Testing and Fabrication of Wire-Bond Electrical Connections - A

Comprehensive Survey, NBS Tech. Note 726 (1972).

10. Sher, A. H., and Keery, W. J., Improved Infrared-Response Technique for Determining

Impurity and Defect Levels in Semiconductors, Appl. Phys. Letters 20, 120-122

(1972).

11. Sher, A. H., Keery, W. J., and Dyson, H. E„, Improved Infrared Response Measurements in Semiconductor Nuclear Radiation Detectors, IEEE Trans. Nucl. Sci. NS-19,

341-344 (1972).

12. Sher, A. H., Liu, Y. M., and Keery, W. J., Infrared Response Measurements on

Radiation-Damaged Si (Li) Detectors, IEEE Trans. Nucl. Sci. NS-19, 312-317 (1972).

13. Thurber, W. R., and Bullis, W. M., Resistivity and Carrier Lifetime in Gold-Doped

Silicon, AFCRL 72 0076 (1972).

Page 60
1971

Publications for the Year 1971

1. Brenner, D. J., A Technique for Measuring the Surface Temperature of Transistors by

Means of Fluorescent Phosphor, NBS Tech., Note 591 (1971).

2. Harman, G. G., and Kessler, H. K., Application of Capacitor Microphones and Magnetic Pickups to the Tuning and Trouble Shooting of Microelectronic Ultrasonic Bonding Equipment, NBS Tech. Note 573 (1971).

3. Liu, Y. M., and Coleman, J. A., Electron Radiation Damage Effects in Silicon SurfaceBarrier Detectors, IEEE Trans. Nucl. Sci. NS-18, 192-199 (1971).

4. Marsden, C. P., Tabulation of Data on Semiconductor Amplifiers and Oscillators at

Microwave Frequencies, NBS Tech. Note 597 (1971).

5. Rubin, S., and Oettinger, F. F., Thermal Hysteresis and Its Possible Effect in Restricting the Hot-Spot-Free Operating Range of Some Power Transistors, IEEE Trans.

Electron Devices ED-18, 393-394 (1971).

©. Sher, A. H., Carrier Trapping in Ge(Li) Detectors, IEEE Trans. Nucl. Sci. NS-18,

175-183 (1971).

7. Sher, A. H., Croil, W. K., and Thurber, W. R., Determination of Oxygen in Germanium Below 20 Parts per Billion by Measurements of Lithium Mobility and Precipitation, Anal. Chem. 43, 1831-1834 (1971).

8. Sher, A. H., and Thurber, W. R., Minority Carrier and Lithium-Ion Drift Mobilities

and Oxygen Concentration in p-Type Germanium, J. Appl. Phys. 42, 4508-4509

(1971).

9. Thurber, W. R., Determination of Deep Impurities in Silicon and Germanium by

Infrared Photoconductivity, NBS Tech. Note 570 (1971).

Page 61
1970

Publications for the Year 1970

1. Bullis, W. M., Measurement Methods for Microcircuits, Paper No. 31, Space Simulation, NBS Spec. Pubh 336 (1970).

2. Bullis, W. M., Thurber, W. R., Pyke, T. N., Jr., Ulmer, F. H., and Koenig, A. L.,

Time Shared Computers in Experimental Environments, Instruments and Control

Systems 43(10), 105-110 (1970).

3. Marsden, C. P., Silicon Device Processing, NBS Spec. Publ. 337 (1970).

4. Sher, A. H., Nomographs for Use in the Fabrication and Testing of Ge(Li) Detectors,

NBS Tech. Note 537 (1970).

5. Sher, A. H., and Coleman, J. A., Lithium Driftability in Detector Grade Germanium,

IEEE Trans. Nucl. Sci. NS-17, 125-129 (1970).

6. Sher, A. H., and Keery, W. J., Variation of the Effective Fane Factor in a Ge(Li)

Detector, IEEE Trans. Nucl. Sci. NS-17, 39-43 (1970).

7. Thurber, W. R., Determination of Oxygen Concentration in Silicon and Germanium

by Infrared Absorption, NBS Tech. Note 529 (1970).

Page 62
1969

Publications for the Year 1969

1. Bullis, W. M., Measurement Methods for the Semiconductor Device Industry - A

Review of NBS Activity, NBS Tech. Note 511 (1969).

2. Bullis, W. M., and Scace, R. I., Measurement Standards for Integrated Circuit Processing, Proc. IEEE 57, 1639-1646 (1969).

3. Bullis, W. Mo, Thurber, W. R., Pyke, T„ N., Jr., Ulmer, F. H., and Koenig, A. L., Use

of a Time-Shared Computer to Control a Hall Effect Experiment, NBS Tech. Note

510 (1969).

4. Harman, G Q., Topological Features of Hot Carrier Induced Anisotropic Breakdown

on Silicon Diode Surfaces, J. Res. Natl. Bur. Standards 73A, 321-331 (1969).

5. Sher, A. E., Lithium-Ion Drift Mobility in Germanium, J. Appl. Phys. 40, 2600-2607

(1969).

Page 63
1968

Publications for the Year 1968

1. Bullis, W. M., Measurement of Carrier Lifetime in Semiconductors - An Annotated

Bibliography Covering the Period 1949-1967, NBS Tech. Note 465 (1968).

2. Bullis, W. M., Measurement Problems in Microcircuit Processing, 1968 Government

Microcircuits Applications Conf. Digest of Papers, pp. 215-217 (1968).

3. Bullis, W. M., Brewer, F. H., Kolstad, C. D., and Swartzendruber, L. J„, Temperature

Coefficient of Resistivity of Silicon and Germanium near Room Temperature, SolidState Electronics 11, 639-646 (1968).

4. Bullis, W. M., and Coleman, J. A., Characterization of Germanium and Silicon for

Nuclear Radiation Detectors. Nucleonics in Aerospace, P. Polishuk Ed., pp. 166-175

(Plenum Press, New York, NY, 1968).

5. Coleman, J. A., Love, D. P., Trainer, J. H., and Williams, D. J., Effects of Damage by

0.8 MeV - 5.0 MeV Protons in Silicon Surface-Barrier Detectors, IEEE Trans. Nucl.

Set. NS-15, 363-372 (1968).

6. Coleman, J. A., Love, D. P., Trainor, J. H., and Williams, D. J., Low-Energy Proton

Damage Effects in Silicon Surface-Barrier Detectors, IEEE Trans. Nucl. Sci. NS-15,

482-490 (1968).

7. Mattis, R. L., Phillips, W. E., and Bullis, W. M., Measurement and Interpretation of

Carrier Lifetime in Silicon and Germanium, AFML-TR 68-81 (1968).

8. Schafft, H. A., Second Breakdown in Transistors, Proc. Second Symp. on Reliability

in Electronics, Budapest, October 1968, pp. 225 (1968).

9. Schafft, H. A., Photovoltaic Method for the Measurement of Resistivity in Germanium

and Silicon, RADC-TR 68-64 (1968).

10. Schafft, H. A., and Needham. S. G„, A Bibliography on Methods for the Measurement

of Inhomogeneities in Semiconductors (1953-1967), NBS Tech. Note 445 (1968).

11. Swartzendruber, L. J., Ulmer, F. H., and Coleman, J. A., Direct Reading Instrument

for Silicon and Germanium Four-Probe Resistivity Measurements, Rev. Sci. Instrum.

39, 1858-1863 (1968).

Page 64
1967

Publications for the Year 1967

1. Bullis, W. M., Standard Measurements of the Resistivity of Silicon by the Four-Probe

Method, NASA-CR 86032 (1967).

2. Harman, G. G., and Gordy, L. H., The Use of Semiconductors for the Study of Boiling

Heat Transfer to Low Temperature Liquids, Cryogenics 7, 89-92 (1967).

3. Schafft, H. A., Second Breakdown in Semiconductor Devices - A Bibliography, NBS

Tech. Note 431 (1967).

4. Schafft, H. A., Second Breakdown: A Comprehensive Review, Proc. IEEE 55, 1272-

1288 (1967).

Page 65
1966

Publications for the Year 1966

1. Coleman, J. A., and Swartzendmber, L. J., Effective Charge Carrier Lifetime in Silicon

p-i-n Junction Detectors, IEEE Trans. Nucl. Sci. NS-13, 240=244 (1966).

2. Dodge, W. R., Coleman, J. A., and Domen, S. R., A Scattering Chamber for Use with

Cooled Large Area Lithium-Compensated Silicon Radiation Detectors, Nucl. Instrum.

& Meth. 42, 181-187 (1966).

3. Dodge, W. R., Coleman, J. A., Domen, S. R., and Whittaker, J. K., LithiumCompensated Silicon Focal Plane Detectors for Electron Scattering Spectrometers,

Rev. Sci. Instrum. 37, 1151-1159 (1966).

4. Dodge, W. R., Domen, S. R., Leedy, T. F,, and Skopik, D. N., Measurement of the

Mean Energy Required to Create an Electron-Hole Pair in Silicon Between 6 and 77

K, Phys. Rev. Letters 17, 653-655 (1966).

5. Harman, G. G„, Avalanche Radiation from the Bulk of Long, Thin, Forward-Biased

p-f»p~n+ Silicon Diodes, Appl. Phys. Letters 9, 207=209 (1966).

6. Kessler, H. K., Cooler for Semiconductor Light Emitters, Lasers, and Photodetectors,

Rev. Sci. Instrum. 37, 517=518 (1966).

To Schafft, Ho A., Avoiding Second Breakdown, Proc. 13th Int. Scientific Congress on

Electronics, Rome, June 1966, pp. 117-130 (1966).

8. Schafft, H. A., and French, J. G., A Survey of Second Breakdown, IEEE Trans. Electron Devices ED-13, 613-618 (1966).

9. Schafft, H. A., and French, J. C., Second Breakdown and Current Distributions in

Transistors, Solid-State Electronics 9, 681-688 (1966).

10. Schafft, H. A., Schwuttke, G. H., and Ruggles, R. L., Second Breakdown and Crystallographic Defects in Transistors, IEEE Trans. Electron Devices ED-13, 738-742

(1966).

11. Winogradoff, N. M., and Kessler, H. K., Radiative Recombination Lifetimes in LaserExcited Silicon, Appl. Phys. Letters 8, 99-101 (1966).

Page 66
1965

Publications for the Year 1965

1. Schafft, H. A., and French, J. C., Breakdown Characteristics of Semiconductor Materials, Electro-Technology 75, 77-82 (1965).

Page 67
1964

Publications for the Year 1964

1. French, J. C., Bibliography for the Measurement of Bulk Resistivity of Device Semiconductor Materials for Electron Devices, NBS Tech, Note 232 (1964).

2. Reber, J. M., Potential Distribution in a Rectangular’ Semiconductor Bar for Use with

Four-Point Probe Measurements, Solid-State Electronics 7, 525-529 (1964).

3. Sehafft, H. A., Average Power Dissipated in a Diode Swept Along Its Reverse Characteristic, NBS Tech. Note 240 (1964).

4. Swartzendruber, L. J., Correction Factor Tables for Four-Point Probe Resistivity Measurements on Thin, Circular Semiconductor Samples, NBS Tech. Note 199 (1964).

5. Swartzendruber, L. J., Calculations for Comparing Two-Point and Four-Point Probe

Resistivity Measurements on Rectangular Bar-Shaped Semiconductor Samples, NBS

Tech, Note 241 (1964).

8. Swartzendruber, L. J., Four-Point Probe Measurement of Non-Uniformities in Semiconductor Sheet Resistivity, Solid-State Electronics 7, 413-422 (1964).

Page 68
1963

Publications for the Year 1963

1. Harman, G. G., Raybold, R. L., and Meyer, 0. L., Direct Observation of Charge

Storage in the Surface States of Silicon, J. Appl. Phys. 34, 380-383 (1963).

2. Swartzendruber, L. J., Applications of a Semiconductor-Surface-State Charge-Storage

Device, Solid-State Electronics 6, 59-61 (1963).

Page 69
1962

Publications for the Year 1962

1. Harman, G. G., and Higier, T., Some Properties of Dirty Contacts on Semiconductors

and Resistivity Measurements by a Two-Terminal Method, J. Appl, Phys. 33, 2198-

2206 (1962).

2. Harman, G. G., Higier, T., and Meyer, O. L., Some Electrical Properties of the Porous

Graphite Contact on p-Type Silicon, J. Appl. Phys. 33, 2206-2208 (1962).

3. Schafft, H. A., and French, J. C., “Second Breakdown” in Transistors, IRE Trans.

Electron Devices ED-9, 129-236 (1962).

4. Swartzendruber, L. J., Single-Trace Sweep Adapter for Transistor-Curve Tracers, Rev.

ScL Instrum. 33, 560-562 (1962).

Page 70
AUTHOR INDEX

A

Acevedo, J 78-40, 81-38

Adachi, T 79-1

Albers, J 76-1, 77-29, 80-1,-2,-3,

81-44, 82-1,-2,-29,

83-

1,-2,-3,-4,-12,

84-

1,-3,-8,-38,

85-

1,-2,-3,-26

AHg, RC 78-73

Aspaes, DE 74-6

Atalar, A 77-1, 78-1, 79-44

B

Baghdadi, A 81-1,

83-

5,-6,-7,-22,-23,

84-

4,-5, 85-5, 86-1,-2,-8

Baroody, AJ 72-4

Barteiink, DJ 79-27

Barton, JJ 81-55

Bass, JF 83-44

Baum, M 79-2

Baylies, WA 83-8

Bell, MI 81-22, 83-16,-22,-23,

84-

19,-40,

85-

14,-15,-19,-27,

86-

17,-42

Benedetto, JM 82-4, 83-13

Bennett, HS 81-2,-3, 82-22,

83-

9,-10,-11,-30,

84-

5,-6,-7,

85-

6,-7,-8,-9,-10

86-

3,-4,-5,-6,-35

Berkowitz, HL 83-12, 84-2,-8,

85-

3

Berning, BW 75-19,

76-

28,-29,-30,-31,

77-

54,-55, 78-3,

79-3,-6, 80-4,

81-4,-5, 82-3,-4,

83-20,-21, 84-9

86-

7

Bhar, TN 79-4

71

Blackburn, BL 72-1, 74-1,

75-1,-2, 76-2,-14,-27,
77-2,-3,-4,-48,

78=2,-3,-4,-29,

79=5,-6, 80-4,-32,

81=5,-6,-7, 82-3,-4,

83-20,-21, 84-9,-26,

85-11,-13, 86-7,-15,-16

Blue, JL 80=59, 81-8,-37,

82-

46,-47,-48,

83-

4,-14,-15,

84-

3,-10,-46,-47,

85-

35,-41,-42,-43,-44

Bonnell, DM 77-63,-65

Bcraldin, CE 85-38, 86-20,-39

Brenner, DJ 71-1

Brewer, FH 68-3

Brodfnehrer, BP 84-11

Bnehler, MG 73-1, 74-2, 75-3,

76-

3,-4,-5,-6,-7,-8,

77-

5,-6,-7,-8,-13,-14,-42,

78-

5,-6,-7,-8,-40,-52,-65,

79-

7,-8,-10,-13,-28,-29,

-42,-47,

80=5,-6,-7,-11,

81-9,-10,-11,-12,-20,

82=6

Bullis, WM 67-1, 68-1,-2,-3,-4,-7,

69-1,-2,-3, 70-1,-2, 72-13,

73-9, 74-3, 77-9,-10,-11,

78-9,-10, 79-9,

80-

8,-9,-10,-34,

81-

13,-14,-15,-16,-29,

82-

5, 86-8

Bunding, KA 83-16

C

Candela, GA 81-17, 82-8, 83-19,

84=12, 86-9

Cannon, CA 78-17,-18

Carpenter, BS 78-66

Carver, GP 79-10,-34, 80-12,-13,

81-

18,-19,-20,-40, 82-6,

83-

17, 84-13

Cassard, JM - See Marshall

Chandler-Horowitz, D 80-40,

82-

7,-8, 83-19, 84-12,

85-12,-15, 86-9,-10

Chang, TT 79-11, 84-16

Chen, DY 83-20,-21

Cheville, DE 83-44

Christou, A 78-11,-12

Ciarlo, DR 75-4, 78-44,-45,-46

Cohen, EC 81-50, 82-9

Coleman, ES 85-22, 86-11

Coleman, JA 66-1,-2,-3,

68-4,-5,-6,-11, 70-5,

71-3, 72-3

72
Comas, J 78-70, 79-38, 80-14,-61,

81-41

Comizzoli, 11B 77-12,-34,-35

Corboy, JF 80-16

Gresswell, MW 85-22,-24,

86-11,-12,-27

Croarkin, MC 82-10,-17

Croll, WK 71-7, 78-50

Cullen, GW 75-5, 80-16

Gullins, WA 81-19

D

Bas, MB 78-59

Bat, R 79-4

Davey, JE 78-12

David, JM 75-3, 77-13

BeBlasio, R 80-15

Devaney, JR 77-14

Dickey, BH 79-12

Dietrich, HB 78-30, 79-30

Dobrott, RD 77-15

Dodge, MJ 84-17, 86-13

Dodge, WR 66-2,-3,-4

Doggett, MR 78-37

Domen, SR 66-2,-3,-4

Downing, RG 84-18

Duffy, MT 75-5, 78-72,-73, 80-16

Bumin, DS 79-13

Dunlap, HL 77-64, 78-71

Dyson, HE 72-11

E

Ehrstein, JR 74-4,-5, 77-16,

79-12,-14, 80-17,-18,-19,

81-15,-21,-44, 84-18,

85-13, 86-22

Ellenwood, CH 86-14

Erickson, NE 77-17

Evans, WH 77-43, 78-38, 79-35

F

Fedotowsky, A 80-35, 81-31

Filliben, JJ 80-55,-56, 81-54

Fine, J 81-17

Flach, DR 86-2

Fleming, RF 84-18

Forman, RA 74-6, 80-20,

81-1,-22,-23, 82-39,-43,

73
83-22,=23, 84-19,-20,

85-14,-15,-18,-19

Forman, S 80-15

French, JC 62-3, 64-1, 65-1,

66-8,-9, 77-18, 83-24

Frisch, RC 81-36,82-23

Fuoss, DE 85-9,-10

Fmramoto, HW 80-37

Gaitan, M 83-42,84-21,-23

86-6,-34,-35

Galloway, KF 75-6,-15,

76-

8,-9,-10,-20,-24,

77-

10,-19,-20,

78-

13,-14,-15,

79-

4,-15,-16,-17,

80-

21, 81-7,-17,-43,

• 82-4, 83-13,-24,-28,

84-

11,-22,-23,

85-

17,-18,-23,-33,-35

86-

16,-23,-32,-38

Gamer, CM 77-30

Geist, J 81-24, 84-29

George, N 76-19

Giauque, GH 86-9

Gibbons, JF 78-25, 79-27

Gilsinn, D 79-18

Ghintini, R 80-46

Gladden, WK 85-5, 86-2

Gladhill, RL 73-5

Glendinning, WB 83-44, 85-47

Gold, RB 79-27

Goldsmith, N 79-19

Goodman, AM 76-11,-12,

77-

21,-22,-23,-24,-25,-37,

78-

31, 79-20

Gordy, LH 67-2

Grant, SB 78-7

Grant, TC 84-39, 85-37, 86-36

Green, RB 76-25

Gninthaner, FJ 77-26, 78-16,

79-

21,-22, 80-22,-23,-57,

81-55

Gninthaner, PJ 79-21,-22

Guenzer, GC 81-30

H

Ham, WE 77-27, 80-16,-24

Harman, GG 62-1,-2, 63-2, 66-5,

67-2, 69-4, 71-2, 72-2,

73-2, 74-7,-8,-9, 76-13,
77-

28,-29, 78-17,-18,

79-23,-24, 80-25, 81-25,

82-

11,-12,-13,-14,-15,

83-

25, 84-24

Harmison, KA 82-15

Hamer, FL 85-34

Hartman, AW 76-15, 77-32

Hasegawa, S 80-26

Hefner, AR 86-15,-16

Helms, CR 77-30,-33,-57,

78-

19,-20,-21,-22,-58,

79-

1,-25,-26,-56,-57,

81-26,-51

Herman, D 81-38

Higier, T 62-1,-2

Hilten, JS 78-23

Hinkiey, 3A 83-26, 84-25

Hoer, CA 75-8

Hogan, S 80-15, 82-16

Hook, HO 77-37, 78-31

Horowitz, D -

see Chandler-Horowitz, D

Hower, PL 76-14,84-26

Huntley, LF 73-6

I

Xmhoff, EA 85-19

J

Jamba, DM 77-31,-64, 78-24,-71,

82-49

Jenkins, W 78-12

Jerke, JM 75-7, 76-15, 77-32,

78-

48, 79-40, 80-27,

82-17,-18

Jesch, RL 75-8,-16

Johannessen, JS 75-9,-10,-11,

76-

16,-17,-18,-34,-37,

77-

33, 78-19,-25,-61

Johnson, NM 78-20,-21,

79-

26,-27, 82-19

Johnston, AH 86-32

Joy, DC 86-30,-31

Xk

Kafadar, K 83-43, 84-43,-44

Kahn, AH 81-37, 82-20, 83-27,

84-19

Kao, CY 84-39, 85-37

Kasdan, HL 76-19, 80-28

Keenan, JA 77-15
Keery, WJ 70-6, 72-10,-11,-12, L

75=6, 76-9,-10,-20,

77-

14,-32

Keller, EA 76-25

Kenney, JM 76-21, 80-29

Kera, W 77-34,-35

Kessler, HK 66-6,-11, 71-2,

73-2,-3, 78-54,-55,

79-48,-49, 80-50,-51,

81-46

Kirk, CP 85-20

Klein, JD 81-55

Koenig, AL 69-3,70-2

Kolstad, CD 68-3

Kompfner, R 77-36

Kowalski, P 81-27, 84-27

Koyama, RY 77-3,

78-

26,-27,-28,-29, -30,

-39,-41,

79-

4,-28,-29,-42,

80-

39

Kraft, R 75-12, 79-18

Kratz, HD 84-20

Kuczer, P 77-37, 78-31

Lagnado, I 75-21

Lankford, WF 80-30, 81-27,-46,

84-27

Lantz, MD 83-28

Larrabee, GB 77-15, 79-30

Larrabee, RD 78-4,-32,-33,

80-

31,-32,-33,-34,-36,-45,

81-

23,-28,-29, 82-44,

83-29,-31, 84-28,-40, 86-17

Lederer, PS 78-23

Lee, FC 83-20,-21

Leedy, KO 72-2, 73-4, 75-6,

76-

9,-10,-20,

77-

14,-38,-39

Leedy, TF 66-4, 76-24, 77-49,

78-

34,-39, 79-31,

81-30

Lehovec, K 80-35, 81-31

Lewis, BF 79-21,-22, 80-22,-23

Lewis, DC 73-9, 75-13, 77-55

Li, SS 77-40,-41, 78-35, 79-32,

81-32,-33,-34

76

Lie, L 85-21

Lieberman, AG 75-14, 76-22,-23

Lin, HC 85-33
Lin, JF 81-33

Linares, LC 81-33,-34

Lindau, I 77-30,-57

Linholm, LW 79-33,-34, 80-12,

81-

9,-10,-11,-35,-36,

-39,-40,

82-

31,-32,-40,-52,

83-

34,-35,-39,-40,-43,-44,

84-

31,-37,-43,-44,-48,

85-

21,-22,-23,-24,-28,

-33,-34,-47

86-

11,-12,-27,-33

Lin, YM 71-3, 72-3,-12,

78-30,-34,-67,

80-55,-56, 81-17,-54

Lonky, M 78-40

Love, DP 68-5,-6

Lowney, JR 80-36, 81-3,-24,-37,

82-20,-21,-22,

83-

27,-29,-30,-31,-37,-38,

84-

29,-30,-45,

85-

25,-27,-39,

86-

18,-19,-41

Lucatorto, TB 80-37, 82-24

Luther, GG 82-24

Ma, Y 85-38,86-20,-39

Madhukar, A 79-21,-22, 80-22,-23

Majumder, KS 78-60

Mandel, J 86-36

Marehiando, JF 84-47, 85-26

Marsden, CP 70-3, 71-4, 78-36

Marshall, GM 82-40

Marshall, JC 83-13, 84-14,-15

Martin, BD 77-52

Maserjian, J 77-26, 78-16,

79-

21,-22, 80-22,-23

Mattis, RL 68-7, 72-4, 75-3,-14,

77-

42,-49, 78-37,-67,

80-

55,-56, 81-20,-36,-54,

82-

6,-23, 83-32,-33

86-14,-21

Maxwell, DA 78-52, 79-46,-47

Mayer, A 79-19

Mayo, S 76-24,-25, 77-43,

78-

14,-15,-38,-39,

79-

16,-17,-35,-37,

80-

37,-40, 82-24,

83-

22,-23, 84-19,

85-14,-16,-27

Mayo-Wells, JF 78-23

Mazer, JA 84-31, 83-34,-35,-40,

85-21,-23,-28, 86-22

McCarthy, D 78-40, 81-38

Mcllrath, TJ 80-37

77
MeLane, GF 81-30

Metz, D 77-61

Meyer, OL 63-1

Miller, J 77-30

Mitchell, MA 81-39,-40

Moore, BA 84-32

Mountain, DJ 86-23

Myers, DR 78-30,-41,-42,-43,-71,

79-

36,-37,-38,

80-

38,-39,-40,-41,

81-

22,-23,-41,-44,

84-38, 85-15

Needham, SG 68-10

Neff, GR 77-52

Nelson, G 78-12

Novotny, DB 75-4, 76-26, 77-44,

78-44,-45,-46, 80-3,-42,

81-

42, 86-9,-24

Nuss, G 80-15

Nyyssonen, D 76-15,

77-

32,-45,-46,-60,

78-

47,-48,-64,

79-

39,-40, 80-43,-44,

82-

5,-25,-26,-27,-28,

84-33,-34,

85-

20,-29,-30,-31

86-

25,-26

Oettinger, FF 71-5, 72-5, 73-5,

74-1, 75-2, 76-14,-27,

77-3, 78-29,-49, 79-41,-45,

80-45, 82-29, 84-26,-35,

85-32, 86-28

O’Keeffe, TW 86-27

Oliver, JD 84-40

Oroshnik, J 78=50

Pande, KF 83-36,84-36

Partiow, WD 85-22

Patrick, S 80-46

Pease, RL 75-15

Peckerar, MC 81-43

Perloff, DS 81-12

Pessall, N 86-11,-12

Phillips, WE 68-7, 72-6, 73-9,

75=3, 76-5, 78-30,-41,-42,

79-36,-42, 80-39,

81-23,-28, 82-30,-44,

83-37,-38, 84-45

78
Plummer, JD 78-25

Post, H 80-15

Postek, MT 85-31, 86-29,-30,-31

Pramanik D 83-34,-35, 85-21

Proctor, SJ 82-31,-32, 83-39,-40

Pugh, ED 86-32

Pyke, TN, Jr. 69-3, 70-2

Q

Quate, CF 77-1,-36,-47,

79-43,-44, 80-47

R

Radack, DJ 85-33, 86-11,-12,-27,

-33

Raybold, RL 63-1

Reber, JM 64-2

Reeve, CP 81-36

Reimann, CT 78-52, 79-47

Robbins, TC 81-7

Roenker, KP 84-37, 85-34

Rogers, GJ 73-6, 75-16, 76-2, 77-3

Roitman, P 77-19,-20, 78-51,

79-17,-37, 80-40, 81-44,

83-3, 84-38,-47,

85-26,-35, 86-6,-34,-35

Rosberry, FW 76-15, 77-59,-60,

78-

64

Ross, R 80-15

Rubin, S 71-5, 72-5, 75-17,

76-2,-14,-27, 77-4,-48,

79-

45, 80-13, 84-26

Rudenberg, HG 75-18

Ruggles, RL 66-10

Russell, TJ 77-49, 78-52,

79-

34,-46,-47, 80-12,

81-

40,-46, 82-33,

83-

41,-42, 84-21,-23,

85-

45,

86-

6,-23,-34,-35,-38

Ruthberg, S 77-50,-51,-52,

80-

48,-49, 81-45,-50,

82-

9,-34,-35,-36,

84-

32

Sandow, PM 74-10

Sawyer, DE 72-7, 73-6, 75-16,-19,

76-

6,-28,-29,-30,-31,

77-

7,-53,-54,-55,

78-

53,-54,-55,

79-

48,-49,-50,-55,

80-

50,-51, 81-46

79
Saxena, AN 83-34,-35, 84-39,

85-21,-28,-37, 86-37

Scace, RI 69-2, 78-56, 79-51,-52,

80-10,-52, 81-16,-47,-48,

82-37, 83-8,-24, 86-8

Schafft, HA 62-3, 64-3, 65-1,

66-7,-8,-9,-lG, 67-3,-4,

68-8,-9,-10, 72-1,-8,-9,

73-7,-8, 74-11,-12,

76-32,-33, 77-56,

78-

54,-55,-57,

79-

48,-49,-50,-53,-54,-55,

80-

15,-30,-51,

81-

27,-46,-49,-50,

82-

16,-38, 83-45,

84-

27,-39,

85-

36,-37, 86-36,-37

Scheibner, EJ 78-61

Schultz, PA 75-4

Schwarz, SA 77-30, 78-19,-20,-58,

79-26,-56,-57, 81-26,-51

Sehwuttke, GH 66-10

Seabaugh, AC 81-21, 83-36,

84-36,-40

Series, RW 86-8

Sher, AH 69-5, 70-4,-5,-6,

71-6,-7,-8, 72-10,-11,-12,

73-3, 74-13, 75-20

Shott, J 86-36

Simons, DS 84-18

Singh, G 86-38

Skopik, DN 66-4

Spicer, WE 75-11,

76-

16,-17,-18,-37,

77-

30,-33,-57,

78-

19,-20,-21,-22,-25,-58,

79-

26, 81-26,-51

Stach, J 77-61,78-59

Stahlbush, RE 82-39

Stallard, BR 84-18

Stallhofer, P 86-8

Stamps, B 78-40

Stehlin, RA 75-15

Steigerwalt, ST 75-21

Stem, EA 85-38, 86-20,-39

Strausser, YE 75-11,

76-

16,-18,-27,-34,

77-

33, 78-22,-60,-61

Suehle, JS 82-40, 83-43,

84-41,-42,-43,-44

86-6,-34,-35

Sulouff, RE 78-62, 79-58

Swartzendruber, LJ 62-4, 63-2,

64-4,-5,-6, 66-1, 68-3,-11,

72-1

80
Swing, EE 76-15,-35, 77-32 V

Swyt, DA 76-15,-36,

77-

58,-59,-60,

78-

63,-64

Taylor, NJ 76-37, 78-25, 81-26,-51

Teng, KW 81-33

Thomas, DB 80-53, 81-52,-53,

82-41,-42

Ttrarber, WE 69-3, 70-2,-7,

71-

7,-8,-9,

72-

13, 73-9, 74-6,

75-3, 76-7, 77-8,-41,

78-7,-8,-33,-65,-66,-67,

80-

33,-34,-55,-56,

81-

23,-28,-29,-54,

82-

43,-44, 83-31,-38,

84-30,-45, 85-39

Till, LJ 82-23

Trainor, JH 68-5,-6

Travis, JC 76-25

Tressler, RE 77-61, 78-59

Tsai, S 83-34,-35

Ulmer, FH 68-11,69-3,70-2

Varner, EN 82-10,-17

Vasques, RP 79-21,-22, 80-22,-57,

81-55

Vezzetti, CF 78-23

Vieweg-Gutberlet, FG 77-11,

83-8

Vorburger, T 86-9

W

Waelmik, RA 84-13, 86-40,-41

Waksman, B 81-56,82-45

Watanabe, M 86-8

Weglein, RD 76-39, 77-62,-63,-65,

78-68,-69, 79-59,-60, 80-62,

81-58, 82-50

Weitzel, CE 77-25

Wendell, CE 82-18

Whittaker, JK 66-3

Wkkramasinghe, HK 77-1, 79-44

Wilkens, N 78-12

Williams, DJ 68-5,-6

Wilson, CL 79-38, 80-58,-59,

81-8,-37, 82-46,-47,-48,

83-3,-4,-14,-15,-42,

81
84-

3,-I,-10,-11,->46,“47,

85-

17,-18,-35,-40,-41,

-42,-43,-44,-45

Wilson, RG 76-38,

77-

62,-63,-64,-65,

78-

43,-69,-70,-71, 79-60,

80-

14,-41,-61,-62,-69,

81-

41,-57,-58, 82-49,-50

Winogradoff, NM 66=11

Witte, LC 85-17,-18,-46

Wunder, SL 86-42

Y

Yao, CT 85-33

Yen, D 82-51,-52, 83-44, 84-48,

85-24,-47

Young, RD 76-15,77-32,-66

Younkins, CD 84-39

Yue-zhen, L 86-8

Z

Zamini, N 80-23

Zanzucchi, PJ 75-5, 78-72,-73,

80-16

Zerbi, G 86-42

Zimmerman, DD 83-45

Zucker, R 83-33

82
TOPIC INDEX

absorption coefficient 70-7

accelerated stress test 79=58

test 79-50,-55

accreditation 81-53,=56, 82=42,-45

accuracy 83-19

of film index 82-8

acoustic

application 78-68

emission 76-13, 77-28, 78-23,

79-23,-24, 80-25, 81-25,

82-11,-13,-14,-15

gray scale 79-60

imaging 78-69

microscopy 77-1,-36,-47,

79-43,-44, 80-47,-62,

81-

58, 82-50

property 76-39

radiation 77-36

sensor 81-25

signature 79-59, 80-62, 81-58,

82-

50

wave propagation 80-47

active device 76-29,-31, 77-55

adaptive method 80-59

additivity law 76-26

ADC error 86-2

adhesion 77-29, 83-26

adsorption 83-16

isotherm 84-25

AES 76-34

alignment

angle 80-60

tolerance 78-44,-45,-46

alkali contamination 78-38

alkanes 86-42

alpha track 78-66

aluminum 74-8, 77-25

doped silicon 80-18

oxide humistor 80-26

interlayer 81-17

/silicon contact 83-34, 84-31,

85-28

metallization 83-35

/silicon dioxide interface 78-

60,-61

wire 72-2, 73-3,-4

83

ammonia 62-2
amorphous Si02 79-22

material 85-38, 86-39

amplifier 70-3

AMS 79-59

analysis 80-35

analytic

method 81-1, 83-5

modeling 86-15,-16

analytical beam technique 76-22

angular

spectrum 80-47

approach 78-1

anisotropy 66-5, 69-4

anneal model 83-3

annealing 78-43, 80-39,-41, 81-22

antireflective chromium 82-18

apodization function 84-4

apparatus 77-23,-24, 78-31, 80-37

arsenic 80-60

diffusion 74-10

implant 76-38, 78-70, 80-61

profile 83-3

artificial intelligence 86-11,-12

ASTM 69-2

standards 80-52

ATE 86-14,-21

atomic profile 84-3

Auger 81-17

electron spectroscopy 76-23,

77-

33, 78-12,

81-26,-51

spectroscopy 75-9,-10,-11,

76=16,-17,-18,

78-

22,-58

sputter profiling 76-34,-37,

77-

30,-57,

78-

19,-20,-21,-25,-61,

79-

26

automated

measurement 78-37

photomask inspection

78-44,-45,-46

tape bonding 76-13, 77-28,-29

automation 75-19, 78-2,-4, 79-5

avalanche

breakdown 80*7

injection 80-4, 82-33, 84-9

axial channeling 76-38

B

back

pressurization 80-48,-49,

81-45, 82-34

surface damage 83-6,-7, 84-5

backscattered electron 86-29

backscattered emission 77-14

84
ball bond 83-25

band

state 82-22

structure 74-6, 85-7, 86-3

tail 83-27, 86-18

tailing 81-24,84-29,86-19

band-bending fluctuation 86-41

bandgap 74-6, 85-19

narrowing 81-3,-24, 82-21,-22,

83-10, 84-5,-7,-29,-30,

85-8,-25, 86-4,-18

bare substrate model 86-10

Bargmann

formulation 81-2

potential 81-3

base

drive circuit 79-3

widening 76-14, 84-26

basic characteristics 70-3

battery 79-54

beam geometry 84-4

beam lead device 76-13, 77-28,

79-23,-24

beryllium doped 85-19

bevel angle 84-3

bias isolation unit 76-11, 77-22

bibliography 64-1, 68-1,-10

bipolar 84-5

device 74-10, 83-9,-10, 85-6

process 78-52, 79-47

transistor 86-5,-16

birefringence 84-17

black chromium artifact 77-32

blister test 83-26

body diode 86-7

boiling heat transfer 67-2

bond 78-17,-18

test 76-1, 82-13,-14

bonding 72-9, 73-3,-7, 74-1,-11,

76-1

boron 81-22,-41,-54, 85-26

nitride 78-59

doped silicon 78-35, 79-32,

80-18, 81-33

bound

exciton 82-39

state 81-24, 82-20

boundary conditions 75-12

breakdown 77-23

characteristics 64-3, 66-7

voltage 83-13, 86-32

bridge structure 78-7

Browian motion 80-36

bubble test 82-35

85
buffer layer 86-15

bugging height 76-13, 77-28

built-in electric field 81-24, 84-29

bulk 78-2

photovoltaic effect 79-5

resistivity 76-6

silicon 84-21

C

calibrated linewidth standards

76-15,-36

calibration 77-16, 80-46, 84-16

capacitance 77-24

measurement 76-11, 77-22,

86-34

meter 76-11

microphone 71-2, 72-2, 73-2

response 79-36

transient 83-37,-38

voltage 77-42, 80-58,

81-17,-54

capillary leak 79-58

capture cross section 86-41

carbon 83-22, 86-1

cardiac pacemaker 76=33, 77-56,

79-53

carrier

-carrier scattering 83-9

concentration 80-34, 81-29

depth distribution 82-49

lifetime 68-7, 69-1, 72-4,-13,

73-9, 84-5

mobility 68-4, 85-4

profile 84-3

recombination 68-1

scattering 83-11

trapping 68-4, 74-13, 75-21

cavity Hi field 84-16

Q factor 84-16

CCD imager 81-18

COE 75=22

cell degradation 80-50

certification 81-53,-56, 82-42,-45

CH2 modes 86-42

channel

length 83-42, 85-35,-44

mobility 80-7

channeling 78-43, 80-41

angle 81-57

characterization 62-3, 65-1,

66-8,-9, 82-30

charge collection efficiency 68-4

charge

-coupled device 84-13

injection 82-33, 85-45

production 70-6

86
pumping 82-33, 83-42,

84-13,-21, 86-40,-41

measurement 86-35

sharing 83-17

-sheet model 85-17,-18,-46

storage device 63-2

chemical

analysis 71-7, 72-10,

77-17, 80-9, 83-22,-23

interaction 81-23

kinetics 80-3

measurement 77-11

milling profiling 78-16

shift 75-9

structure effects 76-16

chlorine 77-61

circuit

characterization 79-34,

80-12

design 76-12

simulation 81-10,-11, 83-18,

84-14,-15

speed measurement 83-28

damping 81-4

clean silicon surface 77-17

CMOS 83-18,-41,84-14,-15

/SOS 79-33

Cobalt-60 86-32

coherence 79-39, 82-25,-27,-28,

84-

33,-34,

85-

20,-29,-30,-31

collector

emitter voltage 77-38

resistivity 76-7, 77-8

COMFET 86-16

compositional analysis 84-19

computational technique 86-28

computer

control 78-2, 84-12

interface 69-3, 70-2

plotting 75-15

program 75-15, 80-34, 81-29,

82-

23, 83-32,-33,

86-14,-21

simulation 81-31

conductance measurement 77-22

conduction state 81-3

conductivity 81-5

mobility 81-32

consensus standards 80-30

contact 81-21

chain 83-34

lithography 86-24

pitting 84-31

resistance 82-31,-32,

83-

34,-39,-40,

84-

22,-31, 85-21,-28

86-22

resistor 78-52, 79-46,-47,

84-13

to ICs 84-31

87
contamination 79=53, 83=25

continuum model 80=1

contour map 83-33, 86-21

contrast 79-60

controlled doping profile 78-71

conversion loss 80-29

converter error 85-5

cooler 66-6

cooperative

research 78=10

technology 78-9

corona charging decoration 77-34

correction factor 80-1,-2, 83-1,-2,

84-8

correlation coefficient 82-23,

83-

32

correlation energy 86-3

corrosion 79-58, 82-12

couplant 78-23

coupled semiconductor equation

84-

10

critical

channeling angle 78-71

dimension 80-43,-44,

82-26,-27, 84-33,-34,

85-20,-29,-30,-31

86=26

cross bridge 77-13, 78-7,-8,-52,

79-46, 81-20,

82-6,-51,-52, 83-44,

85-24,-47

cross van der Pauw 77-13

cryogenic cooling 66-6

crystal 84-17, 86-13

growth 79-52, 83-22,-23,

84-19, 85-14

orientation 66-5, 69-4

crystallography 85-16

current

crowding 76-14,-27, 80-4,

84-26,-31

distribution 66-9

focusing 79-6, 84-9

integrator 77-31

pulse 63-1

response 79-36

voltage characteristic 85-9,-10

custom circuit 76-6, 77-7

IC 81=9

C-V 76-12, 77-23,-24, 78-31,-43,

80=41

measurement 77-25

profiling 76-38, 77-64,

78-70,-71, 80-61, 81-57,

82-49

Czochralski growth 84-19

88
damage 85- 1,-2

effect 71-3, 80-40

Darlington transistor 75-18,

83-

20,-21

data

acquisition system 69-3, 70-2

base 83-33,86-14,-21

de

characteristics 80-7 common emitter gain 83-10,

84-

5

MOSFET profile method

78-6, 80-5

transmission 77-3

deconvolution of spectra 81-55

deep

impurity 71-9

level 78-27, 80-39, 82-19,-43,

84-

40

chemical impurity 78-41

measurement

78-

26,-29,-30,-49,

79-

28,-29,-41, 80-45,

81-23,-28, 82-30,-44,

83-31,-37,-38, 84-45

spectroscopy 80-20, 86-17

study 78-42

defect 72-11, 76-4, 78-28, 80-38,

81-23, 83-23, 84-39,

85-

1,-2,-14,-27

characterization 82-44, 84-45

density 78-11,-27,-30

detection 77-12

distribution 78-26

identification 81-46

level 79-27

mapping 79-28,-29

degradation 74-7, 81-6

deionization 81-24, 82-20, 86-19

delay time 72-7, 73-6

delayed Johnson counter 85-33

density of states 81-24,-32,

82-21,-39, 83-27,-30,

86-3,-4,-18,-19

depletion capacitance 68-4

deposition of Si02 80-57

depth

distribution 80-60

profiling 75-14, 76-17,-18,

78-43, 80-2,-41,

84-18

design rule 80-24

detail MOS capacitor model

86-35

detailed device model 85-9,-10

detection

limit 76-23

method 77-35

89
detector 66-1, 68-5,-6, 70-4,-5,

71-8, 72-10,-11

evaluation 68-4

grade silicon 83-29

nonlinearity 84-4

device 75-13

characterization 78-3

fabrication 70-1, 79-16,-37,-38

inspection 76-9,-10,-20, 77-39

measurement 78-53,-54,-55,

79-

48,-49, 80-51

modeling 82-47,-48, 83-14,-15,

85-8

package 80-48,-49

parameter 81-12

physics 84-5, 85-9,-10, 86-5

processing 80-21

reliability 67-3

simulation 83-14,-15, 85-35

structure 76-22

testing 69-2

die attachment 73-5

dielectric

breakdown 77-21

defect detection 77-34

dielectrics 77-23

differential reflection 75-5

diffraction 80-28, 85-16

pattern analysis 76-19, 80-28

diffused layer 78-8

diffusion 78-34,-59, 79-18,

80-

20,-36, 82-2, 85-26

coefficient 84-22

length 68-1, 72-6

model 83-3

problem 75-12

digital

bipolar circuit 75-16

integrated circuit 81-30 scanner 69-3, 70-2

digitization error 85-5

digitizer error 86-2

dimensional

inspection 78-44,-45,-46

metrology 79-9, 80-8, 86-25

specifications 81-48, 82-37

DIN standards 80-52

diode 62-4, 64-3, 67-3, 75-13,

85-25

die attachment 73-5

recovery 68-1,-7, 81-4

direct current 77-5

discharge suppression 77-21

discrete device 72-8,-9, 74-7

dislocation 78-12, 85-14

dispersion 84-17, 86-13

distortion, 81-5

DLTS 79-27, 80-39, 81-28,

82-19,-43,-44, 84-45

90
donor 81-3, 83-30

impurity 82-22

dopant 80-20,-39

analysis 79-30

concentration 74-4,-5

density 76-3,

77-

5,-40,-41,-42,

78-

6,-35,-65,-66,-67,

79-

32, 80-55,-56,

81-34,-54, 83-17, 84-6,

85-39

depth distribution 80-14

effect 85-9,-10

profile 74-4,-5, 75-15, 76-34,

77-64, 78-6,

79-

12,-14,-27,-37,-38,

80-

5,-7,-58,

81-

41,-57, 82-19,

83-17, 84-18, 86-6

dose

control 77-31

measurement 77-31

rate effect 81-30

doubled hermetic enclosure 77-51

drain,source diode 86-7

resistance 81-7

voltage 80-5

drift velocity 85-39

dry oxidation 78-39

dual angle of incidence 85-12

dye laser 80-37

e-beam 86-27

energy deposition 75-6,

76-

20, 77-19

evaporator 78-15

induced current 76-9,-10,

77-

14,-39, 78-51,

81-

44, 84-38

lithography 78-13, 79-15,-17,

83-44

metallization 79-16

edge

detection 78-48, 82-25,-28

location 77-32

education 79-13

effective mass 79-32, 81-32

efficiency 83-43

electrical

alignment resistor

78-

52, 79-46,-47

characteristic 75-20, 86-23

contact 62-1

junction 83-4

mask alignment 77-49

measurement 75-1, 77-11,

78-32,-67, 79-19,

80-31,-55,-56

parameter 83-43

property 80-34, 81-29,

82-

3,-43

91
resistance 67-2

test structure 79-10, 80-13

transmission 79-51

transport 85-39

electrochemistry 83-16

electromigration 84-39, 85-36,-37,

86-36,-37

electron 72-3

beam 75-6,-10, 76-20, 85-47

density 83-4

device 71-4, 78-36, 79-16,

80-21, 81-7,-17,

82-4,-13,-14

escape depth 78-21

hole pair 66-4

irradiation effect 81-30

microscope 77-58

mobility 77-40,-41, 83-11

radiation 71-3

spectroscopy 77-17

tube 74-1, 78-36

-gun evaporator 76-24

electronic

bond 81-25

circuit 79-3

device 79-23,-24

package 78-23, 81-45,

82-34,-36

reliability 77-54

state density 79-25

stopping 85- 1,-2

structure 79-1

electronics 73-6, 74-3, 75-17,-19,

77-9,-10,-11,-21,-38,-54,

78-9, 79-9,-18,-31, 80-8,

81-13,-14,-26,-39

electrophoretic decoration 77-34

electrostatic potential 83-4

ellipsometric

accuracy 82-7

angle 82-7

ellipsometry 80-17,-19, 81-17,

83-

19, 84-25, 85-12

86-9

elliptic

equation 80-59

solver 82-46

elongation 74-9

ELS 79-1

EMI 85-23

emitter-only switching 75-28

end contact resistance 83-34,

84-

31

energy

conservation 80-45

conversion 80-53

gap 78-42

engineering career 84-41

environmental testing 70-1

epitaxial

diffusion 74-10

92
growth 78-33, 80-33

layer 76-6

resistivity 77-8

silicon 79-11

epitaxy 75-5, 79-52, 83-36, 84-36

EPR 79-11

equilibrium carrier concentration

84-7

equipment 82=16

errorfunction 75=15 source 72=7

ESR spectroscopy 84-16

estimator 83=43

etching 81-44

EXAFS 85-38, 86-20,-39

excess carrier lifetime 68-1

exchange energy 86-3

exhaust 84=20

experimental technique 86-28

expert system 86-11,-12

exposure 76-26, 77-44, 80-42,

81-42

control 76-26, 77-44

modeling 80-42, 81-42

fabrication 73-3

technology 70-4, 71-6

failure 73-5, 76-33, 85-11

and moisture 78-62

mechanism 67-3, 79-50,-55

mode 67=3, 76-33, 79-50

fan© factor 70-6

fault 78-51

detection 77-63, 81-31

Federal government 81-43

Fermi energy 82-21,-22

Pick's law 80-36

field effect device 83-9, 85-6

figure of merit 83-43

filar eyepiece 80-27, 82-17

micrometer 82-17

film 83-26

thickness 76-26, 77-44

substrate model 86-10

filter 84-20

finite

difference technique 75-12

element 80-58, 81-37,

82-20,-46,-48,

84-

3,-46,-47,

85-

41,-42,-43,-44

93
flashlamp-pumped laser 80-37

flatband voltage 85-17,-18,-46

flip chip 71-2, 73-2

flying spot scanner 78-44,-45,-46

focal plane detector 66-3

foreign competition 78-9,-10

FORTRAN program 86-10

four probe 64-2,-4,-5,=6, 67-1,

68-11, 74-3, 77-8,

83-12, 84-2,-8, 85-3

Fourier analysis 80-28, 84-1

spectrum 80-28

transform 85-5

spectrophotometry 86-2

Franck-Condon shift 85-27

free carrier absorption 86-1

Fresnel diffraction 86-24

fringe location 77-32

front contact resistance 83-34

FT-IR 81-1, 83-6,-7, 84-4, 85-5,

86-1,-2,-17

furnace

anneal 82-19

qualification 76-25

fused silica 77-43

gain 85-9,-10

gallium

• arsenide 72-13, 78-12,

81-21, 83-36,

84-

19,-36,-40,

85-

6,-7,-14,-16,-19

86-

4,-5,-17,-19

diffusion 74-10

doped silicon 80-18

electrode 62-1

gamma

radiation 86-6,-38

ray 71-6,86-32

detector 70-6, 74-13, 75-21

gapwidth 86-25

gas

analysis 74-12

infusion of leaks 77-51

gate

length 84-22

oxide film 76-24

gated

diode 79-10,-34, 80-13,

81-18,-38

electrometer 79-10,

80-11,-13, 81-18,-20

Gaussian diffusion 75-15, 77-42

GEMFET 86-16

94
general purpose PDE software

81-8

generation

current 83-31

lifetime 79=10, 80-11, 81-38

germanium 64*1, 67-2,

68-3,-7,-11, 69-1,-5,

70-

4,-5,-6,-7,

71-

6,-7,-8,-9, 72-10,

74-13, 75-21, 81-37

(lithium-drifted) detector

74-13, 75-21

glass passivation film 77-35

gold 74-8

acceptor 78-27,-28

donor 78-27

doped silicon 72-13, 73-9, 76-5

government

facility 81-43

laboratory 84-41

gradient voltage 84-30, 85-25

graphite contact 62-2

gray level 79-60

G-V 78-31

Hall

coefficient 81-33

effect 70-2, 78-32,-33, 79- 11 ,

80-

31,-33,-34,-54,

81-

29,-54

factor 81-33

mobility 81-32,-33

halogen 82-12

hardness assurance 76-21, 77-20

heavily doped

semiconductor

81-

37

silicon 84-6,-7

heavy doping 83-9,-10,-11,

84-29,-30, 85-8,-25

helium leak

detector 82-35

test 74-12

hermetic test 81-45, 82-34,-36

hermeticity 74-11,-12, 76-33,

77-50,-51,-52,

79-

23,-24,-53,-58,

80-

25,-48,-49,

82-

9,-11,-15,-35,

83-

45, 84-32

test standards 77-50,-52

heterostructure 85-6

high

carrier concentration 86-4

concentration effect 86-5

current switch 78-56

detection sensitivity 77-63

95
frequency probe 73-8,

75-8,-17

reliability 73-4

resolution stage 77-66

speed power switching

83-20,-21

voltage 81-4

bias supply 77-37

measurement 76-11, 77-37

sweep 77-37

switch 78-56

high dopant concentration 86-4

hole density 81-32, 83-4

effective mass 81-34

mobility 78-35, 79-32, 81-34,

83-9,-11

homogeneity 78-4, 79-5

hot

carrier 66-5, 69-4

bias stress 85-45

/cold wafer chuck 79-28,-29

photoluminescence 85-19

spot 71-5, 72-5, 74-1,

75-

2,-18,-20,

76-

2,-14,-27,-28,-29,-30,

77-

2,-4,-48, 84-26

Huang-Rhys factor 85-27

hybrid 79-23,-24

circuit 74-7, 82-35

device 77-56

microcircuit 80-48,-49

package 80-25, 84-32

hydrogen 79-35

chloride 77-61

hydroxyl 79-35

IC 83-24

device 86-28

fabrication 80-21

inspection 81-58, 82-50

linewidth measurement 76-36,

77-

46, 78-47

package 86-28

passivation overcoat 77-12

photomask 76-36, 77-45,

78-

48, 82-10

processing 78-59, 81-44, 84-38

quality control 77-34

test structure 82-51, 83-40,

85-28

transistor 75-8

icosahedral 86-20

IGBT 86-15

IGT 86-16

image resolution 77-62

imaging contrast 80-47

MMA 79-30

impact noise 78-23

impedance 79-60, 81-5

transformer 79-60

96
implant 82-2

profiling 78-70, 80-61

implantation

angle 77=64

measurement 78-24

implanted impurity 80-40

impurity 72-11,-12, 77-15,

80-9,-20, 81-3,

83-23,-27,-30

analysis 79-30

band 83-27,86-18,-19

characterization 71-8

defect 72-10

distribution 79-18

level 81-37,82-20

mode 85-15

pair 82-20

profile 76-22, 83-17

indium

doped silicon 78-33, 80-33, 82-

39

phosphide 78-12

inductive load 79-3

infrared 71-9, 81-1, 83-5, 84-17

86-13

absorption 70-7, 72-10,-11,

83-23, 84-5, 86-1

measurement 86-8

reflectance 80-16

response 74-13, 75-21

spectrophotometry 84-4

spectrum 85-15

temperature measurement

82-3

inhomogeneity 64-6, 68-10

instrument 68-11

instrumentation 77-24, 78-31,

80-37

insulator film 76-22, 77-12

integrated

circuit 69-2, 70=1,

72-8, 73-1,-4,-7,-8,

74-

2,-7,-11,-12,

75-

6,-7,-19,

76=8,-15,-32,

77-

6,-9,-15,-18,-27,

-49,-52,-65,

78-

5,-10,-13,-37,-52,

79-

8,-9,-15,-31,

80-

6,-9,-10,-12,-27,-62,

81-

9,-10,-11,-13,-14,

-17,-35,-36,-47,

82-

5,-17,-31,-32,-40,-51,

83-

28,-39, 84-2,-28,-37,

85-

21,-22,-23,-24,-33,

-34,-36,-37

86-

11,-12,-27,-33,-36

contact 86-22

injection logic 75-16

test structure 80-13, 81-18

interactive graphics 82-46, 84-46

interband scattering 85-40

interconnect 86-11,-12,-27

97
interconnection 81-39, 82-32,-39,

85-

21,-22,-37

interface 76-12

characteristic 76-22

damage 85-45

state 79-42, 82-33, 85-45

86-

35,-39,-40

trap 84-21,-23, 86-6,-38

spectra 86-35

trapped charge 82-47, 83-42

interfacial

boundary 75-12

contact resistance 83-35

interferogram 81-1

interferometer system 77-32

interlaboratory comparison 75-17,

77-60, 78-17,-18,-64

intermetallic formation 82-13,-14

international collaboration 86-8

international

standards 80-52

standardization 83-8

intrachip variation 83-18,

84-14,-15

intrawafer variation 83-18,

84-14,-15

inverter 83-18, 84-14,-15

chain 85-33

ion

beam current 78-24

etching 76-37

lithography 80-21

scanning 77-31, 78-71

channeling 78-71, 79-37,-38,

80-14, 81-41,-44,-57,

84-38

dose measurement 81-57

fluenee 80-60

implantation 76-38,

77-

5,-31,-64,

78-

13,-24,-30,-41,-42,

-43,-71,

79-

15,-27,-37,-38,

80-

14,-39,-40,-41,

81-

22,-41,-57,

82-

19,-49,

84-

11,-18,-38,

85-

1,-2,-26

knock-on 78-21

microprobe mass spectrometry

77-15

sputtering 76-17,-18, 77-33,

79-

56,-57

ionized impurity scattering 77-41

ionizing 83-13

radiation 75-6, 76-20,

77-19,-20, 79-4,-16,

80-

23, 82-4, 84-23

86-

32

total dose 83-28

irradiance measurement 76-26,

77-44

98
irradiation 68-5,'-6, 84-21

isoeleetronie 82-39

isotope 79-36

shift 78-42, 80-20

I-V characteristic 84-23,

85-17,-18,-46

junction

capacitance 84-30

structure 82-2

temperature 77-2, 79-45,

82-29, 84-35, 85-32

termination 83-13

K

Kelvin measurement 83-34, 85-28

kinetic equation 80-3

Klrkendall void 74-8

Klauder self-energy method 86-3

L

laboratory

accreditation 80-53

surface 84-20

Laplace equation 83-1,-2

large scale integration 79-31

laser 66-6

ablation 82-24

annealing 80-40, 81-22

application 79-39

illumination 78-47

interferometer 77-58

scanning 75-20,

76-

28,-29,-30,-31,

77-

53,-54,-55,

78-

54,-55, 79-48,-49,

80-

50,-51,

81-

27,-31,-46, 84-27

lateral

inhomogeneity 78-11

profile 84-38

lattice

damage 78-72

mobility 77-40

relaxation 85-27

scattering 77-41

layer thickness 82-1

leak

detection 77-50,-51

rate 78-62

to reliability 78-62

testing 76-33, 77-56, 79-53,

80-48,-49, 81-45,

82-

34,-35,-36

leakage current 78-27, 79-10,

80-11,-13, 81-38

86-40,-41

least squares 84-7

99
lifetime 66-1, 75-13, 78-40, 81-28,

82-44, 83-10,-29,-31,

84-6,-45, 85-8, 86-15

radiation 86-16

lightning arrester 79-51

line

edge detection 76-35

location 77-45,-46

image profile 77-45

spacing 82-10,-18

linear calibration curve 82-10

linewidth 77-6, 78-7,

80-6,-28,-43,-44,

82-

5,-6,-10,-17,-26,

83-

44, 84-48, 85-24

86-25,-28,-42

calibration standards 77-60,

78-64, 82-18

measurement 76-15,-19,-35,

77-

32,-45,-48,-58,-59,-60,

78-

63,-64,79-40,

80-27,-28,

82-17,-18,-25,-27,-28,

84-

33,-34,

85-

20,-29,-30,-31,-51,-52

86-

26,-30,-31

microscopy 77-59, 78-63

system 78-48

resistivity 86-17

liquid nitrogen 67-2

lithium 66-1, 69-5, 70-4 ,-5,-6,

71-6,-7,-8, 72-11,-12

drift mobility 68-4

drifted detector 69-5

lithography 82-51, 85-24, 86-24

local

mode 85-15

slope 80-2, 83-1,-2

logic

flow observation 76-31

identification 77-55

simulation 81-10,-11

long channel MOSFET 84-11

low

accelerating voltage 86-30,-31

energy electron probe 78-11

temperature processing 78-28

LSI testing 76-28,-31, 77-55

M

magnesium fluoride 84-17

magnetic

package lead 81-5

pickup 71-2, 73-2

tape head 86-25

many-body

effects 86-19

interaction 86-3,-4,-5

mask alignment tolerance 80-24

mass spectrometer measurement

82-9

100
material 83-45

transport 79=18

materials

characterization 68=4,

78=28, 79-19, 80-8,-9,

81-

14

parameter 81-12,-40

property 81-16

signature 80-47

mean energy 66-4

measurement 66-4, 68-2, 72-1,

77-16, 79-1, 80-46,

84-22,-43,-44, 85-35 assurance 82-10

development 77-53

error 72-7,77-66

interference 79-42

mixer 77-54

problem 68-2

technology 70-1, 71-5, 72-5,

75-19, 76-2,-4,-5,-9,-32,

77-

10,-18,-48,-56,

78-

2,-4,-10, 79-45,-53,

80-8,-29,-30, 81-46,

82-

39, 83-24, 84-27

uncertainty 80-29, 86-10

mechanical scanning 79-44

mechanism 77-29

memory 79-31

metal

evaporation 76-24, 78-15

-nitrogen-oxide 77-33

-semiconductor contact 83-40

metallization 73-4, 76-24, 77-25,

78-

15,-34,-53,-54,-55,

79-

48,-49, 80-51,

84-39, 85-21,-36,-37

86-36,-37

metallurgical junction 83-4

metallurgy of wire 74-9

metrology 78-40, 80-43,-44,

81-

13,-14,-15, 82-26,

86-29,-30,-31

microcircuit 70-1

device 78-23

processing 68-2

microdensitometry 78-44,-45,-46,

79-39

microdot reference specimen

79-30

microelectronic

device 76-20,-24, 77-14, 78-15,

82-

51

interconnection 71-2, 73-2

material 69-2

package 82-35

test structure 83-34

microelectronics 72-8,-9,

73-3,-7,-8, 75-7,-22,

76-

3,-6,-9,-10,-13,-32,

77-

7,-10,-27,-28,-39,-43,

78-

17,-18,-40,-65,

101
79-9,-13,-16, 80-8,-25,-27,

81-

13,-35,-36,-38,-39,-40,

-43,

82-

5,-6,-11,-15,-31,

-32,-40,-52,

83-

25,-39,84-37,-39,-48,

85-

21,-22,-23,-34,-37

86-

23,-27,-33,-37

microfatigue test 82-13,-14

microlithography 79-39,-40,

82-25,-27,-28, 84-33,-34,

85-29, 86-26

micrometrology 75-7, 76-19,

79-

39,-40, 80-27,-43,-44,

81-

14, 82-17,-18,-26,

85-20,-30,-31

microprocessor 79-31

microscope 77-47, 79-43

microscopy 77-45,-46, 77-62,

78-68, 79-69,

80-

43,-44,-47,

82-

25,-26,-27,-28,

84-

33,-34,

85-

20,-29,-30,-31

85-26

microwave 70-3

frequency 76-39

mixer diode 76-21, 80-29

minority

carrier 84-6

current 84-7

lifetime 83-31

mobility 83-10

MIS

capacitor 77-21

structure 77-23,-25, 78-31

MNOS structure 76-17,-18

mobile ion 77-61, 78-39, 79-4,-42

mobility 69-5, 70-5, 71-7,-8,

78-67, 80-34,-55,-56,

81-29, 84-5,

85-

8,-17,-18,-39,-46

MO-CYD 83-36,84-36

model calculation 81-27

modeling 80-35,-59, 85-35,-44

86-

15,-30,-31

modified MIS measurement 76-11

modular test program 80-24

modulation 80-29

moisture 81-50, 82-9, 83-45, 84-32

content 81-50, 82-9

generator 81-50

infusion 78-62, 79-58

measurement 80-26

sensor 84-32

stress test 78-62

minicomputer 84-10

minimum sample 83-43

102
molecular

beam epitaxy 85-19

structure 83-10

momentum conservation 85-40

Monte Carlo method 83-3,

85-1,-2,-6,-40

MOS 77-43, 81-51, 84-23

capacitor 75-3, 86-6

76-4,-5, 78-28,-51,

79-4,-42

device 78-39, 79-4,-17, 81-26

structure 76-17,-18, 78-38

MOS-CV 86-35

MOSFET 77-5, 80-5,-7] 81-7,

82-

4,-33,-47,-48,

83-

13,-41, 84-11,-22,-23,

85-

17,-18,-35,-44,-40

86-

32,-38,-40,-41

dc profiler 79-10, 81-18,-20,

83-17

model 85-41,-42,-43

structure 78-22, 79-25

transistor 82-46, 84-11,-46,-47,

85-41,-42,-43

multigrid method 82-20

multilayer analysis 80-2, 83-1,-2

multilevel interconnect 86-11,-12

multilevel iteration 80-59

multiple

reflection 75-5, 83-6,-7, 84-5

scattering 83-27

N

NAND gate 83-18, 84-14,-15

NBS photomask standards 86-25

neutral trap 82-33

neutron 72-3, 76-21, 86-16

activation analysis 80-54

radiation effect 81-7

transmutation doping 80-38

nomograph 70-4

nondestructive

bond pull 74-9

evaluation 86-17

measurement 79-6, 82-3,

84-27

testing 71-5, 72-1,-5, 75-20,

86-7

76-

13,-28,-29,-30,-31,

77-

4,-28,-48,-50,-55,

78-

3, 79-5,-23,-24,

80-4,-50, 81-25, 82-13,-14,

83-20,-21, 84-9, 85-11

nonlinear

equation 82-48

region mapping 77-55

resistor 79-51

nonlinearity 86-2

measurement 75-20, 76-30

nonuniform structure 83-12

103
NTD 84-28

silicon 84-24

n-ehannel power MOSFET 86-38

n-type silicon 77-40,-41

nuclear

detector 66-1, 69-5, 71-7

radiation 68-5,-6, 70-6

track technique 78-66

numerical

analysis 77-13

method 81-8, 83-14,-15, 84-10

simulation 80-58

off-contact separation 86-24

ohmic contact 78-53, 86-22

oil fumes 84-20

on-chip signal processing 80-11

one-body interaction 86-3

optical

absorption 74-6,

83-22,-23, 84-19, 85-7

data 84-7

coherent illumination 76-35

filtration 76-35

imaging 80-43,-44, 82-26

linewidth measurement 76-15

material 84-17, 86-13

metrology 82-5,-25,-27,-28,

84-33, 85-29, 86-26

microscopy 77-32,-58,-59,-60,

78-

63,-64, 79-39,-40,

82-5,-17,-18

overlay 78-44,-45,-46

property 81-23, 82-39, 85-19

reflectance 78-72,-73, 80-16

scanning 78-53, 80-50

microscope 78-47

spectra 80-20, 81-22

optics 77-54

oriented crystal silicon 77-17

oscillator 70-3

outlier 82-23, 83-32,-33, 86-14,-21

output signal 76-23

oxidation 78-34, 79-52

ambient control 78-39

atmosphere 78-38

furnace 77-43

kinetics 79-26

of silicon 78-59

oxide

characteristics 86-23

film of GaAs 79-21

growth 78-39

humistor characteristics 80-26

kinetics 79-25

layer 80-21

moisture sensor 79-58

/semiconductor interface

79-

21

104
thickness 78-25

trapped charge 82-47

uniformity 78-11

oxygen 70-5, 84-5, 86-1

adsorption 77-30

content 84-4

in germanium 70-7

in silicon 70-7, 86-8

package internal moisture 80-26

packaging 83-45

parameter

control 77-7

extraction 85-17,-18,-46

measurement 84-37, 85-22,-34

parametric tester 81-9,-12

parasitic

element 75-8

path 83-9

partial differential equation

82-48,

85-40,-41,-42,-43,-45

partially coherent imaging 79-39

passivation 77-35,-61, 84-39

Penrose tiling 85-38, 86-20,-39

performance criteria 78-57, 80-15

phase imaging 77-1

phonon 85-19

phosphorus

concentration 80-54

contact doping 83-35

profile 78-25,-58

photochemistry 80-3

photoconductive decay 68- 1,-7,

72-4

photoconductivity 66-11, 71-9,

79-5

variation 80-32

photodetector 66-6

photodiode 84-29

photoemission spectroscopy 77-57

photolithography 74-11, 75-7,

76-19, 77-49, 78-34,

79-

52

photoluminescence 66-11, 82-39,

84-7

photolysis kinetics 80-42, 81-42

photomask 75-7, 78-44,-45,-46,

80-

10,-27,-28,

82-5,-17,-18

alignment 80-6

calibration 86-26

inspection 75-4

linewidth 77-46

standard 77-58,-59, 78-63

performance 80-24

105
photometric technique 80-54

photon intensity 80-3

photoresist 77-44, 80-3,-42, 81-42

sensitivity 76-26

photoresistance DLTS 84-40

photoresponse 71-9

photovoltage 72-6, 78-2

photovoltaic

cell 81-27

effect 72-6, 78-4

energy 79-54, 80-30

method 72-1, 77-3, 78-49,

80-32

module 80-46, 81-53, 82-42

power 80-15

wafer scanner 78-29

photovoltaics 77-53, 78-57,

79-

50,-55,

80-

15,-30,-46,-53,

81-

31,-46,-49,-52,-53,

82-

16,-38,-41,-42

physical

specifications 81-48,

82-37

standards 81-16

FIND 78-23

planar

bipolar transistor 78-25

channeling 76-38

enhanced deposition 84-36

technique 83-36

etching 78-13, 79-15

production, heating 82-24

silicon technology 76-23

test structure 76-7

platinum 83-37,-38

doped silicon 82-43

PMOS shift register 76-31

p-n junction 73-1, 75-3,

76-

4,-5,-9,-10,

77-

39,-42

isolation 78-33, 80-33

polished silicon surface 78-72

polymer 83-26, 86-41

/substrate/solvent 84-25

polysilicon film 80-14,-19

polystyrene/silica adsorption

84-25

porous graphite contact 63-1

post-oxidation annealing 86-23

potential profiling 81-21

power 75-1, 83-13

circuit 86-7

conditioning 78-57, 79-54

control 78-57

cycling 74-8

device grade silicon 77-3,

78-

49, 79-41, 80-45,

81-28, 82-44, 84-45

106
material 80=38

dissipation 84-3

MOSFET 82-3, 85-11, 86-7

semiconductor 78-2,-4,-26,

79-5, 81-4, 84-28, 86-15

switching 78-3

system 79-54

thyristor 78-26,-29

transistor 66-7, 71-5,

72-5, 74-1, 75-2,

76-2,-14,-27, 77-4,-48,

79-6,-45, 80-4, 81-6,-7,

82-3,-4, 83-20,-21,

84-

9,-26, 86-15

predeposition 78-41

principal angle of incidence

82-7,-8, 84-12

probe

card 78-37

current density 82-1, 84-8,

85-

3

pad 78-37, 79-7

radius 84-2, 85-3

separation 84-2, 85-3

spacing 82-2, 84-8

station 81-19

probing 78-37

process

characterization 81-40

control 74-11, 75-3,-19,-22,

76-32, 77-10,-56, 78-8,

79-

2,-8,-33,-53,

80-

6,-12,-24,

81-

10,-11,-19,-36,

82-

6,-40, 84-48

metrology 79-33

modeling 80-36, 82-21, 84-47

parameter 81-40, 84-43,-44

sensitivity 84-47

uniformity 76-6, 77-7

validation wafer 76-6, 78-5,

79-34, 81-35,-36,

82-

23,-40, 83-32,-33

86-14,-21

processing 79-20

technology 79-52

product certification 80-53

profile analysis 83-4, 84-2

profiling technique 77-11, 80-5,

83-

17

propagation delay 83-28, 85-33,

86-33

proton 72-3

irradiation 68-5,-6

proximity

correction 83-44, 85-47

effect 83-44, 85-47

lithography 86-24

p-type silicon 78-35, 79-32, 80-18,

81-33,-34

pull

rate 76-1

strength 76-1

107
test 78-17,-18

pulsed laser 80-37

pump 84-20

purple plague 74-8

Q

quadrant detector 84-12

quadraxial configuration 80-37

quality assurance 78-72,

81-49,-50, 82-9,-10,-38,

84-32, 85-14

quantum efficiency 84-29

quasi

-crystal 85-38, 86-20,-39

-static C-V 80-6

radiation 66-2, 70-4,-5, 83-13

86-35

absorbed dose 80-21

damage 68-5,-6, 72-12, 75-10,

78-

13,-14, 79-15,-10,-17,

80-

21,-38, 86-32

detector 69-5, 71-8,-7,-8

dose 76-24, 77-19,-20, 78-15,

79-

16

effect 72-3, 75-10, 76-8, 79-4,

81-

7, 82-4,-47, 83-28,

84-21,-23,-48, 86-38

hardening 86-32

hardness 76-8,-21, 78-13,

79-15, 81-30, 82-4

testing 77-19,-20

upset 81-30

radiative decay lifetime 66-11

radioisotope

leak detection 77-52

test 74-12

Raman

scattering 83-16, 86-42

spectrum 85-15

random

equivalent direction 79-37,-38

fault 76-6, 77-7, 80-6,

81-35,-39,-40

rapid solidification 86-20

rapidly cooled material 85-38,

86-39

rate constant 80-3

RG network 72-7

recombination 72-6, 75-13, 83-31,

84-6

rectifier 78-56

redistribution problem 75-12

reference

cell 80-46, 81-52, 82-41

material 81-15

108
reflectance function 78-1

reflected illumination 78-47

reflection 77-1

acoustic microscopy 78-1,

79-59

refractive index 82-7, 83-19,

84-12,-17, 85-12, 86-9,-13

registration error 75-4

reliability 68-9, 72-8,-9, 73-7,

74-7,-11,

76-

2,-6,-27,-32,-33,

77-

7,-34,-53,-56,

78-

5,-54,-55,

79-

2,-8,-49,-50,-53,-55,

81-9,-50, 82-9,

83-

20,-21,-25,-45,

84-

32,-39, 85-36,-37

86-36

research 84-42

resistivity 62-1, 64-1,-2,-4,-5,-6,

67-1, 68-8,-9,-10,-11,

89-1, 72-13, 73-9,

74-3,-4,-5, 76-3,-7,

77-

8,-16,-40,-41,

78-

2,-4,-11,-35,-65,-66,-67,

79-

12,-14,-19,-32,

80-

1,-2,-9,-10,-18,-34,-54,

-55,-56, 81-29,-32,-34,-54,

83-1,-2, 84-2, 85-3,-13,-39

gradient 72-1, 80-32

inhomogeneity 69-1

nonuniformity 78-29

profiling 79-12,-14, 83-29

variation 77-3, 78-49,

79-5,-41, 80-32,-45

resolution of forces 76-1

resonance

conversion 86-7

fluorescence 76-25

ionization spectroscopy 82-24

resonant converter 86-7

return loss 80-29

reverse base current 80-4, 81-6

bias 78-3, 79-3,-6, 81-4,-6,

83-20,-21, 84-9

review 67-4, 68-8, 86-1

ribbon wire 73-3

ring oscillator 83-18, 84-14,-15,

85-33, 86-33

rotating analyzer 82-8

round robin 67-1

Rutherford hackscattering 78-71

safe operating area 71-5, 72-5,

75-1, 76-2,-14,-27,

77-2,-4,-48, 78-3,

79-3, 84-26, 85-11

109
sampling strategy 84-43,-44

Sandia bridge 73-6

sapphire 75-5

surface 78-73

saturation

effect 80-3

voltage 77-38

scaling 83-41

scanning

acoustic microscopy

77-63, 77-65, 78-1,

79-60, 81-58, 82-50

electron microscopy, see SEM

light spot 80-35

microscopy 82-27, 84-33,-34,

85-

20,-29,-30,-31

86-

26

photometric microscopy 77-66

scattering 73-6, 85-1,-2

chamber 66-2

mechanism 77-40, 78-35,

79-32, 81-33,-34

parameter 75-17

spectrometer 66-3

theory 83-27

Schottky

barrier 76-38

diode 76-21, 80-29,-58, 82-49

Schwinger formulation 81-2

screen 73-5

screened Coulomb potential 81-2

seal 74-12

second

Bom approximation 83-30

breakdown 62-3,-4, 65-1,

66-7,-8,-9,-10, 67-3,-4,

68-8, 69-1, 71-5, 72-5,

76-

2,-14,-27, 77-2,-4,-48,

78-3, 79-3,-6, 80-4,-10,

81-4,-6, 83-20,-21, 84-26

secondary

electrons 86-29

ion mass spectrometry, see SIMS

emission 77-14

particle suppression

77-

31, 78-24

SEDAN 86-6

segregation 79-18

selective chemical etching 77-34

self-energy 85-7, 86-18

SEM 73-4, 75-6, 76-9,-10,-20,

77-14,-19,-20,-32,-39,

-62,-65, 78-51, 80-27,-47,

81-44, 84-38,

86-29,-30,-31

SEMI 81-48,82-37

standards 80-52

semiconducting material 77-9

semiconductor 63-2,

64-2,-3,-4,-5,-6,

110
68-1,-9,-10, 69-5,

70-3,-4,-5, 71-4,-6,-9,

72-10,-12, 74-3,-6, 75-15,

76-

4,-12,-23,-32,

77-

16,-39,-42,

78-

4,-11,-31,-32,-36,-67,

79=9,-12,-14,-27,-46,-51,

-55,

80-

8,-9,-31,-36,-39,-54,

-55,-56,-59,

81-

5,-13,-14,-15,-16,-26,

-47,-54, 82-4,-19,-30,-43,

83-

8,-22,-23,-27,-45,

84-

1,-19,-27, 85-15,-16,-36

86-8,-37

breakdown 66=5, 69-4

characterization 76-7, 77-8,

82-

38, 83-37,-38

defect 76-5

device 62-3, 63-2, 66-6,-7,-8,

67-4, 68-8, 73-8, 74-11,-12,

75-

1,-3,-5,-19,-20,

76-

7,-9,-10,-22,-28,-30,-33,

77-

2,-10,-19,-20,-21,-22,

-23,-34,-37,-38,-54,

78-

14,-38,-56,-60,

79-

4,-9,-17,-20,-37,-38,

80-

50, 81-30,-47,-50,-51,

-58, 82-9,-35,-50,

83-

40, 84-23,-32

86-34

model 85-41,-42,-43

diode 76-21,80-29

electronics 78-65

equation 83-4, 84-3

fabrication 75-4

hermeticity 77-50,-51

material 77-10, 82-30

metrology 77-18,

78-

26,-29,-53,-54,-55,

79-

48,-49, 80-10,-51, 83-24

physics 86-19

processing 77-9, 78-59, 81-47

standards 80-52

structure 77-33

surface 77-57

technology 78-9, 79-18, 81-47

test method 80-52

wafer 72-1

semi-insulating 84-40

sensitivity index 76-26, 77-44

sensitometry 77-44, 80-42, 81-42

shear test 83-25

sheet

resistance 64-1, 77-6,-13,

78-

7,-8,-52,-53,-54,-55,

79-

47,-48, 80-2,-51,

81-27, 82-1,-2, 84-2,-8,-27,

85-3, 86-22

resistor 75-3, 76-3, 78-7,-65,

79-34, 84-13

short channel 80-7, 82-47, 82-48,

83-17,-41

MOSFET 83-3,-42

signal processing 77-65

Si(Li) detector 72-3

111
silicon 62-1,-2, 63-1, 64-1,-2,-4,

66-1,-3,-4, 67-1,-2,

68-3,-5,-6,-7,-11, 69-1,

70-1,-7, 71-3,-9,

72-

4,-6,-11,-12,-13,

73-

1,-9, 74-3,-4,-5,-6,-13,

75-

13,-15,-19,-21,

76-

3,-4,-5,-7,-12,

77-

3,-5,-6,-8,-11,-16,-23,

-24,-25,-42,-49,

78-

5,-32,-34,-41,-43,-49,

-59,-66,-67,

79-

12,-14,-19,-27,-30,-31,

-35,-36,-41,-42

80-

9,-20,-31,-33,-36,-38,

-39,-40,-41,-45,-54,-55,-56,

-60,

81-

1,-13,-14,-15,-22,-23,

-24,-29,-32,-37,-41,-47,

-48,-54,

82-

19,-20,-21,-22,-24,-37,

-39,-43,

83-

8,-9,-10,-11,-22,-30,

-31,-37,-38,

84-

4,-5,-19,-29,-30,

85-

13,-15,-25,-26,-27,-39

86-

1,-8,-17,-18

carbide 62-1

characterization 81-49

defect 66-10

device 78-56

diode 66-5, 69-4, 76-34, 83-19

dioxide 77-43,-61, 78-38,-39,

79-4,-35,-59, 81-26,-41,

83-26, 86-9

film 75-5,-10, 76-16,-24,-37,

80-

17,-19,-23

growth kinetics 78-19,-20

interface 78-61

layer 75-11

thermal oxide 79-26

gate 79-33

implantation 80-14

lattice 78-42

monoxide 76-34

nitride film 80-17,-19

oxidation tube 78-38

polishing 77-16

radiation detector 66-2

resistivity 75-3

/silicon dioxide 86-39

interface 75-9,

76-16, 77-26,-30,

78-

16,-19,-20,-21,-22,-58,

79-

1,-22,-25,-26, 80-22,-57

layer 75-14

chemical states 78-22

spectra 76-34

sputtering 79-30

technology 81-44, 84-28,-38

thickness 86-9

simulation 85-41,-42,-43,-44

SIMS 78-70, 79-30, 80-14,-61,

81-

51, 82-49, 83-3, 84-18

sintered aluminum/silicon 86-22

sintering effect 86-22

sodium

contamination 77-43

impurity 78-38

112
trace detection 76-25

solar

array 77-53, 80-15

cell 77-53, 78-53,-54,-55,

79-

48,-49,-50,-54,-55,

80-

15,-30,-35,-46,-51,

81-

27,-31,-46,-49,-52,-53,

82-

16,-38,-41,-42, 84-27

analysis 81-31

defect 80-35,81-27

measurement 80-51

silicon 81-48, 82-37

stability 79-48,-49

collector 80-53, 81-56, 82-45

data 82-16

energy 78-57, 80-15,-53,

81-

52,-53,-56,

82-

41,-42,-45

simulator 81-49, 82-38

solid state device 84-11

electronics 70-3, 83-40,

84-22,-37, 85-28,-34

SOS 76-12, 77-25, 78-14,-15,-73,

80-16, 81-35, 82-40

measurement 77-22,-37, 79-20

S-parameter 73-6, 75-8,-17

space charge region 84-30, 85-25

spatial

integrity 77-27

normniformity 83-42

specific contact resistivity 84-31

specifications 65-1, 66-7

spectral

analysis 81-55

response 81-49, 82-16,-38

spectrometer 66-3

spectroscopic 81-1

ellipsometer 82-8, 84-12

technique 83-5

specular reflection 75-5

spider bonding 71-2, 73-2

spreading resistance 74-4,-5,

77-16, 78-49,

79-

12,-14,-19,-41,

80-

1,-2,-18,-45, 81-21,

82-1,-2, 83-1,-2,-3,

84-2,-3,-8,-18

sputter

etching 79-60

profiling 81-26

sputtered glass 76-39

sputtering 81-51

theory 79-57

yield 79-56,-57

square array 77-8

SUM 80-17,-19, 81-15, 82-10,

84-16, 85-13, 86-9

standard reference material, see SRM

113
standards 69-2, 79-54, 80-15,

81-

48,-49,-52,-53,-56,

82-

16,-37,-38,-41,-42,-45,

83-

8,-25

statistical

analysis 82-23, 83-32,-33,

86-14

model 79-56

technique 83-43

steady state heat flow 84-1

step coverage 81-39

storage 78-57

strain 85-14

striation 83-22

structural defect 77-35

stylus method 78-50

stylus profilometry 86-9

submicron 85-44

bipolar device 85-9,-10

length measurement 77-66

lithography 85-47

sulfur 78-30,-41, 79-36, 81-23

SUPREM 86-6

surface 83-16

analytical analysis 75-14,

76-23, 77-26,-57

barrier detector 71-3

contamination 76-22

damage 78-72,-73

effect 75-6

generation 86-40

impurity 77-17

phenomena 63-2

photovoltage 72-13

potential 78-12

preparation 74-4,-5

recombination 79-10, 80-11,

81-

38

roughness 80-16

site 84-25

state 63-1, 72-6, 84-21

temperature 71-1

switching 81-6

characterization 80-4

synchrotron radiation 77-57

system control module 69-3, 70-2

systematic error 86-10

T

TAB device 79-23,-24, 81-25,

82-

13,-14

tape bonded device, see TAB device

tape head gap 86-25

technology assessment 78-56,

80-12

teletypewriter interface 69-3, 70-2

114
temperature 74-1, 75-1,-2,

77-40,-41, 81-6

coefficient 68-3, 86-13

mapping 76-29, 77-55

measurement 71-1, 74-1, 75-2

sensitive 71-1

variation 76=29

tertiary 81-1

test chip 77=27,78-40,

81-

9,-10,-11,-12,

82-

31,-32,-51,-52,

83-

39,-40,-41,-43,

84-

13,-37,-43,-44,-48,

85-

21,-22,-24,-28,-34,-36

86-

11,-12,-27,-33,-36

circuit 83-28

method 79-34,-54, 80-11,-46,

81-18,-19, 83-8,-42

pattern 74-2, 75-3,

76-

3,-6,-8,-32,

77-

6,-7,-49,

78-

5,-37,-52,-65,

79-

7,-8,-33,-34,-46,-47,

80-

6,-24,

81-

12,-19,-20,-35,-36,-38,

-46, 82-40,-52, 83-40,

84-13,-37, 85-33,-34

structure 75-22, 76-3,-8,

77-13, 78-8,-40,-65,

79-

2,-7,-8,-33,-46,-47,

80-

6,-10,-11,-12,-13,-24,

81-

9,-10,-11,-16,-18,-19,

-20,-27,-35,-36,-38,-39,-40,

82-

6,-31,-32,-33,-40,

83-

32,-39,-41,-44,

84-

13,-27,-37,-39,-48,

85-

21,-22,-23,-24,-28,-33,

-34,-36,-47

86-

11,-12,-27,-33,-36,-37

testing 62-3, 66-8, 72-8,-9, 73-8,

79-31, 81-4

theory 62-3, 66-8

thermal

analysis 84=1

annealing 81-22

breakdown 67-3

characterization 74-1, 75-2,

86-28

chuck 78-27

instability 71-5, 72-5,

76-

2,-14, 77-2,-4,-48,

84-

26

measurement 82-29, 84-35,

85-

32

modeling 82-29, 84-35, 85-32,

86-

37

oxidation 77-43, 79-35

oxide 78-58

property 75-1

resistance 75-18, 76-27,

77-

2,-4, 79-45, 81-5,-16,

82-3,-29, 84-1,-35, 85-32,

86-37

response 74-1, 75-2

shock 80-25, 82-11,-15

test chip 82-29, 84-35, 85-32

wafer chuck 79-28,-29

thermally

115
grown 3102 77-26,

80-57

deposition 75-11

stimulated capacitance 78-30

current 78-30

measurement

78-

26,-27,-28,-29,-41,

79-

28,-29,-36,-42, 82-30

thermocompression 77-29

thermographic phosphor 71-1

thermometry 82-30

thickness 83-19, 84-12

thin

oxide 86-23

film 76-34, 78-60, 79-50,-55,

80-

17,-19,-62, 82-7, 84-12

adhesion measurement

78-

50

Si02 film 79-21, 80-22

threshold

adhesion failure 78-50

voltage 84-11

shift 86-38

thyristor 78-2,-56, 79-52,

80-18,-38

material 77-3, 81-28

measurement 77-3, 78-49,

79-

41, 80-45

total dose 77-20, 83-13

trace

analysis 77-11, 82-24

for silicon 86-8

for oxygen 86-8

tracer 62-4

transconductance degradation

86-38

transducer 78-23

transient

capacitance 81-28, 82-44,

84-45

spectroscopy 82-43

thermal response 74-1, 75-2

transition metal 85-38, 86-39

transistor 62-3,-4, 64-3, 65-1,

66-7,-8,-9,-10, 67-3,-4,

68-8, 72-7, 73-4,-6,

75-1,-17, 76-28, 77-38,

78-

3,-34,

79-

3,-6,-8,-45,-52, 80-59

chip temperature 71-1 curve 62-4

die attachment 73-5

fabrication 74-10

gain 78-5

turn-off 84-9

transmission illumination 77-46

transport 85-40

trap 71-6, 72-12*

time-shared computer 69-3, 70-2

topography 85-16

116
density 84-6

TTL 78-5, 81-30

tunneling 62-1

turn off 85-11

two

dimensional array 82-23

model 83-42, 84-47,

85-26,-40

layer structure 78-33, 80-33

probe 64-5, 79-14, 83-12

terminal device 63-2

U

UHF transistor measurement

76-28,-30

ultrasonic

bonding 71-2, 72-2,

73-2,-3,-4, 76-1, 77-29,

78-17,-18

cleaning 82-12

fatigue 74-8

imaging technology 79-43

ultrathin film 85-12

ultraviolet 86-13

ultraviolet reflectance 80-16

uncertainty 82-10

university 79-13

collaboration 81-43

U.S.S.R. 71-4, 78-36

uv photoelectron spectroscopy

77-30

Y

vacancy 80-36

vacuum 84-20

valence

band 81-33

state 81-3

van der Pauw

measurement 83-29

structure 77-13, 78-7,-8

Van Kreveld’s law 80-42, 81-42

varistor 79-51

VBMOS 81-7,82-3

VHSIC 86-30,-31

vibration 80-25, 82-11,-15

vibrational

model 85-15

spectroscopy 86-42

vibronic coupling 78-42

visual

alignment 79-46

structure 77-49

defect 75-4

117
VLSI 78-9,-17, 80-10, 83-45,

84-

22, 85-22,-23, 86-23

86-30,-31,-36

contact reliability 83-35

device 86-34

metallization 83-35

package 82-12,-29, 84-35,

85-

32

processing 78-13, 79-15

voltage

contrast 77-14

variable resistor 79-51

W

wafer 82-12

chuck 81-19

diagnostics 78-11

map 81-36, 82-23,-52,

83-

32,-33, 85-23, 86-14,-21

probe station 81-19

prober 79-28

scanning 80-32

testing 78-37

water vapor 62-2, 63-1

weak inversion measurement

84-

21, 86-35

weld 81-25

welding 72-2, 77-29

mechanism 72-2

wire 77-29

bond degradation 72-8

failure 72-8,-9, 73-7

test 73-7, 74-9

bonding 71-2, 72-2,-9,

73-2,-3,-7,-8, 74-7,-8,

76-1, 78-17,-18,

81-16, 82-12, 83-25

work damage 80-16

workshops 77-53

X-band measurement 76-21

XPS 78-16, 79-21,-22, 80-22,-23,

80-57, 81-51,-55

x-ray 85-16, 86-20

exposure 78-14

lithography 78-14, 79-17

topography 66-10, 86-17

yield 79-8

analysis 80-12

Yukawa potential 81-2,-3, 82-22,

83-30

zinc

implanted silicon 75-14

oxide 79-51

118
NBS-114A irev. 2 -ac) U.S. DEPT. OF COMM.

BIBLIOGRAPHIC DATA

1. PUBLICATION OR

REPORT NO,

2. Performing Organ. Report No. 3. Publication Oate

SHEET (See instructions) NBSIR 87-3522 February 1987

4. TITLE AND SUBTITLE

Semiconductor Measurement Technology: A Bibliography of NBS

Years 1962-1986

Publications for the

5. AUTHOR(S)

Jane Walters , Editor '

6. PERFORMING ORGANIZATION (If joint or other than NBS, see instructions) 7. Contract/Grant No. national bureau of standards

DEPARTMENT OF COMMERCE §. Type of Report & Period Covered

WASHINGTON, D C. 20234

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street, City. State, ZIP)

16. SUPPLEMENTARY NOTES

[~~1 Document describes a computer program; SF-185, FIPS Software Summary, is attached.

lie ABSTRACT (A 200-word or less factual summary of most significant information . If document includes a significant

bibliography or literature survey

,

mention it here

)

This bibliography contains reports of work performed at the National Bureau of

Standards in the field of Semiconductor Measurement Technology in the period

from 1962 through December 1986. An index by topic area and a list of authors

are provided.

12. KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolons)

analysis techniques; bibliography; device physics and modeling; dimensional metrology;

gallium arsenide materials; insulators and interfaces; integrated circuit test structures; packaging; power devices; publication list; semiconductor metrology; silicon

13. availability materials 14. NO. OF

1^ | Unlimited

PRINTED PAGES

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| | Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C.

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123

15. Price

QE Order From National Technical Information Service (NTIS), Springfield, VA. 22161 $18.95

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