NBS

PUBLICATIONS

NATL INST. OF STAND & TECH

A111D7

NBSIR 84-2927

Center for Electronics and

Electrical Engineering

Technical

Publication

Announcements

Covering Center Programs,

April • June 1984 with

1984 CEEE Events Calendar

August 1984

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899

“QC

100

.U56

84-2927

1984
INTRODUCING CEEE TECHNICAL PUBLICATION ANNOUNCEMENTS

This is the first edition of a quarterly abstract journal covering the work of the

National Bureau of Standards Center for Electronics and Electrical Engineering, This

issue of the CEEE Technical Publication Announcements covers the second quarter of

calendar year 1984.

Organization of Announcements : This issue contains citations and abstracts for

Center papers published in the quarter. Entries are arranged by technical topic as identified in the table of contents and alphabetically by first author under each

subheading within each topic. Following each abstract is the telephone number of the

individual to contact for more information on the topic; unless otherwise noted,

this person is the first author. This issue also includes a calendar of Center

conferences and workshops for the remainder of calendar year 1984, an announcement of

newly released standard reference materials, and a list of sponsors of the work.

Center for Electronics and Electrical Engineering : Center programs provide national

reference standards, measurement methods, supporting theory and data, and

traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U. S, competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government,

The work of the Center is divided into two major programs: the Semiconductor

Technology Program, carried out by the Semiconductor Materials and Processes and

Semiconductor Devices and Circuits Divisions in Gaithersburg, MD, and the Signals and

Systems Metrology Program, carried out by the Electrosystems Division in Gaithersburg

and the Electromagnetic Fields and Electromagnetic Technology Divisions in Boulder,

CO. Key contacts in the Center are given on the back cover; readers are encouraged

to contact any of these individuals for further information.

Center sponsors : The Center Programs are sponsored by the National Bureau of

Standards an^ a number of other organizations, in both the Federal and private

sectors; these are identified on pages 11 and 12,

Note on Publication Lists : Guides to earlier as well as recent work are the

publication lists covering the work of each division. These lists are revised and

reissued on an approximately annual basis and are available from the originating

division [publications from the Semiconductor Technology Program are covered in a single list, available from either Semiconductor Division],
RBS

RESEARCH

INFORMATION CENTER

CEEE Technical Publication Announcements - August 84 Page 1

TABLE OF CONTENTS

INTRODUCTION inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM

Silicon Materials 2

Analysis Techniques 2

Dimensional Metrology 2

Integrated Circuit Test Structures 3

Process & Device Modeling 3

Packaging 4

Other Semiconductor Metrology 5

SIGNALS AND SYSTEMS METROLOGY PROGRAM

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 5 Antenna Metrology 5 Microwave and Millimeter-Wave Metrology 6

ELECTRICAL SYSTEMS 6

Power Systems Metrology 6

Magnetic Materials and Measurements 8

Other Electrical Systems Topics 8

ELECTROMAGNETIC INTERFERENCE 9

CEEE CALENDAR 9

NEW STANDARD REFERENCE MATERIALS 11

SPONSOR LIST 12

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 1 CEEE Technical Publication Announcements - August 84

SEMICONDUCTOR TECHNOLOGY PROGRAM

Silicon Materials

Lowney, J.R. and Geist, J.C., Comparison of Models of the Built-In Electric Field in Silicon at High Donor

Densities, J. Applied Physics, 55

(10), pp. 3624-3627 (15 May 1984).

The built-in-electric field for holes

due to donor-density gradients in n-type

silicon is calculated at 300 K for donor

densities between 1 x 10^® and 1 x 10^®

cm-^. The calculation is based upon a recent model of band-gap narrowing that

includes the effects of ionized

impurities, many-body interactions, and

an estimate of spatial fluctuations of

the band-gap edge caused by the random

distribution of donor atoms in the silicon crystal. This model of band-gap

narrowing differs significantly from a number of other band-gap narrowing

models currently in use in that it

agrees with the band-gap narrowing mea- sured optically at 35 and 300 K rather

than that inferred from electrical mea- surements. The built-in-electric field

based on this model, which also differs

significantly from the results of most

previous models, decreases significantly

above a donor density of 1 x 10^^ cm-^

with a reversal of the field above

7 X 1019 cm-9. The implications of this

work for photodiodes are discussed.

[(301) 921-3786]

Thurber, W.R., Lowney, J.R., and

Phillips, W.E., Measurement Techniques for High Power Semiconductor

Materials and Devices: Annual Report,

January 1, 1982 to March 31 , 1983,

NBSIR 84-2838 (April 1984).

This annual report is the final one in a series which describes NBS research to

develop procedures for the effective

utilization of deep-level measurements

to detect and characterize defects which

reduce lifetime or contribute to leakage

current in power-device-grade silicon.

During this reporting period, the previously written computer program for

predicting excess-carrier lifetime was revised to calculate more accurately

lifetimes for high or low injection

conditions and in space-charge regions.

Comparisons were made between lifetime

measurements on platinum-doped silicon

diodes and the predictions of the com- puter model. As part of the effort to

extend the procedures to analyze data

from nonexponential transient capacitance measurements, the time dependence

of the capacitance-voltage relationship

of a heavily platinum-doped silicon

diode was measured as a function of bias

voltage. Included as appendices are three recent publications resulting from

the work. A listing of the lifetimepredicting computer program is also an appendix.

[(301) 921-3625]

Analysis Techniques

Chang, T-T. , The Calibration Methods

and the Reference Materials in ESR

Spectroscopy, Magnetic Resonance

Review, 9 (1-3), pp. 65-124 (May

1984)

.

This paper reviews the calibration methods and reference materials that have

been recommended or have been in use in

ESR [electron spin resonance] spectroscopy. Methods for the measurement of

microwave frequencies and magnetic

fields are briefly mentioned. Methods

to measure the Q-factor of a microwave

cavity are described. The calculation

and measurement of the microwave magnetic field in an ESR resonance cavity

are described in detail. Methods for

the determination of the concentration

of the paramagnetic centers in a sample

are described after a discussion of the

theoretical background. Precautions and

factors that affect the accuracy of this

determination are discussed. Reference

materials, in 16 groups, are listed.

Recipes for preparation of some of these

standard samples are also given.

[Contact: Larrabee, (301) 921-3786]

Dimensional Metrology
CEEE Technj cal Publication Announcements - August 84 Page 3

Nyyssonen, D. , National Bureau of

Standards, A Review of NBS's Activities

in the Area of Linewidth Measurement,

Proc. Scientific Apparatus Makers Association Conf., The Future of Optical

Technologies in the Semiconductor

Industry, pp. 1-7 (March 1984)

[Conference, Sunnyvale, CA May 23,

1983].

This manuscript is a summary of a talk

covering current NBS activities in linewidth measurement including research,

calibration of standard reference materials (SRMs), development of calibration

procedures and test methods, and technology transfer. The current status of

photomask linewidth SRMs is discussed

(anti-refl ecti ve "gold" chromium SRMs

474 and 475, bright chromium SRM 476,

and the 3X reticle SRM 1830). Wafer

linewidth measurements are divided into

two categories, thin layers (less than

approximately 200 nm) and thick layers.

The design of the linewidth standard for

thin layers is described. Research

problems remaining for thick layers are described along with current NBS wave- guide modeling. Instrumentation used

for both photomask and wafer calibrations is also described, NBS plans for

development of SEM/e-beam instrumentation and SRMs are also included.

[(301) 921-3786]

Integrated Circuit Test Structures

Roenker, K.P. and Linholm, L.W., An

NMOS Test Chip for a Course in Semiconductor Parameter Measurements, NBSIR

84-2822 (April 1984).

This report describes an NMOS test chip,

NBS-40, which was developed to be used

in graduate level electronics engineering courses involving semiconductor

parameter measurements associated with

the fabrication of integrated circuits.

The 35 test structures included in the

test chip and their use in materials,

device, and process parameter measurements are described. Details of the

silicon gate NMOS process used in the

chip fabrication are also provided.

[Contact: Linholm, (301) 921-3541]

Process and Device Modeling

Albers, J. , Semiconductor Measurement

Technology: TXYZ: A Program for Semiconductor IC Thermal Analysis, NBS

Special Publication 400-76 (April

1984)

.

A computer program, TXYZ, for the

thermal analysis of semiconductor

integrated circuits is presented and its

applications are discussed. The program

makes use of the closed form, analytic

solution of the steady-state heat flow

problem for a rectangular three-layer

structure with multiple heat sources on the top layer. The temperature may be

obtained for any point or set of points

in the structure and is useful in the

determination of the steady-state

thermal response of IC chips and

packages.

[(301) 921-3621]

Bennett, H.S. and Wilson, C.L. , Analysis of the Statistical Comparisons of

Data on Band-gap Narrowing in Heavily

Doped Silicon: Electrical and Optical

Measurements, J. Applied Physics,

55, 3582-3587 (May 15, 1984).

A system of subroutines for iteratively

reweighted least squares (IRLS) computations has been applied to the published

measured and theoretical data on band-gap narrowing in heavily doped

silicon. The data include electrical

and optical measurements at room

temperature, photoluminescence and

optical measurements for temperatures

below 35 K, and theoretical calculations

at 300 K and 0 K. This procedure, IRLS,

allows an unambiguous comparison of the

various experimental and theoretical

data in band-gap narrowing to be made.

The results are (1) that the optical

absorption data and theory are consistent at both 300 K and at temperat .rf>s below 35 K; (2) that the electrical and

optical measurements are not consistent;

and (3) that when compared witn the lowtemperature optical absorption data, ti *.•
Page 4 CEEE Technical Publication Announcements - August 84

Process & Device Modeling , cont'd,

photoluminescence data have low statistical significance. [(301) 921-3541]

Blue, J.L. and Wilson, C.L. , Numerical

Methods for Solving Coupled Semiconductor Equations on a Minicomputer,

Proc. Elliptic Problem Solvers II,

Academic Press, pp. 521-530 (April

1984)

.

A general mathematical model for analyzing currents and fields in semiconductor

devices requires three coupled nonlinear

elliptic partial differential equations

in two dimensions. A general -purpose

solver for systems of coupled nonlinear

elliptic partial differential equations

is used. The numerical framework is

linear elements on triangles, with

nonuniform tri angul ations. The non- linear finite element equations are solved by approximate Newton methods;

the linearized equations are solved by

sparse Gaussian elimination and by

multi-level iteration. For accurate

solutions, triangle refinements are generated adaptively.

[Contact: Wilson, (301) 921-3541]

Roitman, P. , Albers, J. , and Myers,

D.R., An Investigation of the TwoDimensional Shape of Ion-Implanted

Regions, J. Applied Physics, 55

(12), pp. 4436-4443 (June 15, 1984).

The two-dimensional shape of arsenic

ion-implanted regions in single-crystal

silicon was investigated both experimentally and theoretically. Experimentally, two techniques were shown to have

the necessary submicron resolution: a junction etch process and an SEM-induced

current collection method. A comparison

of junction depths determined by the

etch technique and the EBIC techniques

with the depths calculated using several

amorphous target codes was made. For

the case of low temperature (600°C)

anneals, the etch technique agrees very

well with the junction depths predicted

by the amorphous target code due to

Winterbon. The lateral junction locations obtained from the etch technique

are in good agreement with the predictions of a two-dimensional Monte Carlo

code (TRIM) which indicates that the

arsenic does not show any significant

lateral scattering under mask edges.

For the high temperature (1000°C) an- neals, the etch and EBIC techniques

agree with each other. Comparison with

arsenic-diffusion models shows that

concentration-dependent effects are

important.

[(301) 921-3621]

Packaging

Harman, G.G., The Microelectronic

Bail-Bond Shear Test - A Critical

Review and Comprehensive Guide to Its

Use, Solid State Technology, 27 (5),

pp. 186-197 (May 1984).

The microelectronic bail-bond shear test

was first developed in 1967. Since

then, it has been used to study the

effects of contamination on bondability,

to characterize the reliability of goldaluminum intermetal 1 ic formation, to

control bonding machine parameters for

device production, and to troubleshoot

such production problems as poor metallization adherence and contamination.

This paper critically reviews all of

these uses and identifies ways that the

shear test can be implemented to improve

bond yield and assure long term bond

reliability. A manual shear probe is

described that can be quickly made from

the blade of a jeweler's screwdriver.

This probe was instrumented with a strain gage and the shear test results

compared within 10% of those obtained

from a machine. The paper also presents

data obtained from shearing both

aluminum-ball and -wedge bonds and

determines how the shear testing machine

requirements for these differ from those

required to test gold ball bonds.

The shear strengths of both annealed

gold and aluminum were measured and

compiled in a plot of shear force versus diameter of the bonded area in order to
CEEE Technical Publication Announcements - August 84 Page 5

Packagi ng , cont'd.

determine the maximum force obtainable

when shearing both gold and aluminum

bonds having differing ball size.

Interferences that may produce erroneous

shear test results, such as friction

rewelding of gold balls on gold metallization, are described along with ways

of avoiding such problems. Finally, the

implications of pending ASTM and

military standards on the widespread use

of the shear test is discussed. This

paper is intended to present all information necessary to both understand and

implement the shear test for research

purposes or for production control.

[(301) 921-3621]

Other Semiconductor Metrology

Dodge, M.J., Refractive Properties of

Magnesium Fluoride, Applied Optics,

23 (12), 1980-1985 (June 15, 1984).

The refractive indexes of a commercially

available specimen of single-crystal

MgF2 were determined for both the

ordinary and ext raordi nary rays at

selected wavelengths from 0.2026 to

7.04 ym. Measurements were made by

means of the minimum-deviation method on

a precision spectrometer near 19°C. The

experimentally determined index values

for each polarization were fitted to a three-term Sel Imeier-type dispersion

equation of the form:

n^ - 1 = I

- ^j^),

relating the refractive index n to the

wavelength of interest X, the wavelength

A

j

. The birefringence was computed as a function of wavelength from the calculated index values obtained for the two

polarizations. The dispersion coefficients were also determined for the 0-

ray and for the birefringence. The

results of this study are compared with

previously reported work on the refractive properties of MgF2.

[(301) 921-3625].

Kowalski, P. , Lankford, W.F., and

Schafft, H.A., Nondestructive

Measurement of Solar Cell Sheet

Resistance Using a Laser Scanner,

IEEE Trans. Electron Devices, ED-31,

pp. 566-570 (May 1984).

Experimental data have shown that a laser scanner can be used as a probe to

make nondestructive measurements of

solar cell sheet resistance with an accuracy of several percent. The photovoltaic response from cells with con- trolled sheet resistance was measured

using the scanner and compared with the

theoretical predictions made by other

workers. Several limitations in this

technique are identified and a measurement methodology is suggested.

[Contact: Schafft, (301) 921-3621]

FAST SIGNAL ACQUISITION, PROCESSING,

AND TRANSMISSION

Antenna Metrology

Fitzgerrell, R.G. , A Source of E and H

Fields for Antenna-Factor Calibration, IEEE Trans. Electromagnetic

Compatibility, EMC-26, No. 2, pp. 58-65

(May 1984).

The loop cell used for calibration is

fabricated using two intersecting metal

sheets joined at the intersection and

forming a 36° angle. A section of a loop is mounted between two coaxial

panel jacks, one on each sheet located

at a distance equal to the loop radius

from the intersection. A known current

through this section of electrically

small loop produces calculable E and H fields between the sheets in the plane

of the loop. These known fields may be

used to determine the antenna factor of

small E and H antennas placed in the

field if the mutual impedance due to the

antenna images in the sheets is negligible and the antenna is not close to thp

open edges of the cell. Measured and

calculated antenna factors agree within

± 2 dB between 0.25 and 1000 MHz.

[(303) 497-3737]
Page 6 CEEE Technical Publication Announcements - August 84

Microwave and Millimeter-Wave Metrology

Juroshek, J.R. and Hoer, C.A., A Dual

Six-Port Network Analyzer Using Diode

Detectors, IEEE Trans. Microwave

Theory and Techniques, MTT-32, No. 1,

pp. 78-82 (January 1984).

The performance of a dual six-port network analyzer using diode detectors is

described. The network analyzer operates over the 2-18 GHz band using com- mercially available, low-barrier,

Schottky diodes. The paper describes

the process for calibrating the diodes

for deviation from square-law. Measurement results are presented showing the

accuracy and precision of the six-port

network analyzer when measuring 1-port

and 2-port devices.

[(303) 497-5362 or -3196]

ELECTRICAL SYSTEMS

Power Systems Metrology

Hebner, R.E., Development of Power

System Measurements — Quarterly Report

October 1, 1983 to December 31, 1983,

NBSIR 84-2861 (DoE) (May 1984).

This report documents the progress of

three technical investigations sponsored

by the Department of Energy and performed by or under a grant from the

Electrosystems Division, the National

Bureau of Standards. The work described

covers the period October 1, 1983 to

December 31, 1983. This report emphasizes the errors associated with mea- surements of electric and magnetic

fields, the properties of corona in

compressed SFe gas, and the measurement

of interfacial pnenomena in transformer

oi 1

.

[(301) 921-3121]

Hillhouse, D.L., Petersons, 0., and

Sze, W.C., A Simplified System for

Calibration of Coupling Capacitor Voltage Transformers, IEEE Trans. Power

Apparatus and Systems, PAS-103- No. 5,

pp. 1092-1098 (May 1984).

Metering accuracy coupling capacitor

voltage transformers (CCVTs) are

installed permanently in 230-500 kV

substations and must be calibrated in

place. Several years ago, the National

Bureau of Standards (NBS) developed a field calibration system, with uncer- tainties of ±0.1% and ±0.3 milliradian.

This paper describes a simpler system,

consisting of a 15 kV standard transformer and its power supply, a capacitive transfer standard divider, and a voltage comparator. In field tests,

this system agreed with the prototype to

within ±0.03% and ±0.1 milliradian. The

new system can be transported in a non- dedicated truck, and operated from the

substation control house or a van. [(301) 921-3121]

Kelley, E.F. and Hebner, R.E.,

Electro-Optic Electric-Field

Measurements Near Oil-Pressboard Interfaces, Conference Record 1984 IEEE

International Symposium on Electrical

Insulation, Montreal, Canada, pp. 311-

314 (June 11-13, 1984).

Electro-optical Kerr-effect measurements

are made to characterize the electric

field in the vicinity of pressboard

interfaces in transformer oil. The

interfaces are placed between parallel

plate electrodes and are oriented parallel to the field direction and in con- tact with both electrodes. The electric

field enhancement in the liquid alone

(due to space charge) is compared with

the enhancement with interfaces

installed. These results serve to

better define the roles of space charge

and interfacial surface charging in

pressboard/t ransformer-oi 1 high-voltage

systems.

[(301) 921-3121]

Kelley, E.F., Hebner, R.E., FitzPatrick,

G.J., and Forster, E.O., The Effect

of Aromatic Impurities on the Positive

Streamer Growth in Marcol 70, Confer- ence Record 1984 IEEE International
CEEE Technical Publication Announcements - August 84 Page 7

Power Systems Metrology , cont'd.

Symposium on Electrical Insulation,

Montreal, Canada, pp. 284-287 (June Ilia, 1984).

The growth of positive streamers has

been photographed in Marcol 70 in the

presence and the absence of

dimethyl ani 1

i

ne (DMA). Marcol 70 is a fluid which is chemically similar to

transformer oil but with the aromatic

components removed. This combination

has been studied previously by other

authors, and was chosen for this work,

because it should provide useful

information on the contribution of

aromatic components to the electrical

properties of transformer oil. As in

earlier studies, it was noted that the

positive streamers initially propagate

at or near sonic speed. After the

streamer has propagated some distance

across the inter-electrode gap, a supersonic secondary streamer develops

that leads to breakdown. The initiation

of this second event is significantly

delayed by DMA. As in earlier studies

in n-hexane, the reason for this

ehavior is assumed to be structural

changes in the streamers because of the

low ionization potential of DMA. These

structural changes, in turn, lead to a modification of the electric field

distribution between the positive

streamer tips and the plane cathode.

Information derived from the photographs

suggests that the field distribution

changes from a very nonuniform to a more

uniform one, which would lead to the

observed higher breakdown voltages. The

data presented are not in complete

agreement with those reported in the

literature. This disagreement is

believed to be attributable to experimental differences.

[(301) 921-3121]

Ramboz, J.D. and Flach, D.R., HighCurrent Measurement Techniques, NBSIR

84-2881 (May 1984).

The measurement of very high ac currents

presents special problems in the selection of current sensors, instrumentation, and techniques. This report dis- cusses initial test results for Rogowski

coils and high-capacity current shunts

often used to measure large ac currents.

Eight Rogowski coils of three sizes and

ratings were tested at a nominal current

of 1000 A. The coils were compared

against an NBS precision ai r-core mutual

inductor to obtain a measure of complex

sensitivity, positional sensitivity,

gap-separation sensitivity (for the

split-coil types), and proximity effects

of the return conductor and of ferromagnetic material. The shunt was tested to assess the proximity effects of the

return conductor and of ferromagnetic

material. It was concluded that the

particular Rogowski coils tested would

not have measurement uncertainties of

less than a few percent unless extreme

care was taken in their calibration and

subsequent use. The measurements for

the shunt suggest somewhat less proximity effect than those for the coils. A

digital oscilloscope was evaluated for

possible use as a transient recorder.

The effective number of bits, the differential linearity, and the response to

a step function were determined.

[(301) 921-3121]

Van Brunt, R.J. and Anderson, W.E.,

Bibliography of Data on Electrical

Breakdown in Gases, NBS Technical

Note 1185 (April 1984).

This report consists of a bibliography

of currently published data on electrical breakdown in gases. The bibliography contains a list of archival papers

and books published since 1950, an index

indicating the references that give

particular types of data for each gas,

an author index, and a list of relevant,

regular technical conferences. The

citations given in the bibliography

contain experimental or theoretical data

on breakdown which include:

(1) sparking potentials; (2) breakdown

voltages; (3) critical fields, or fieldto-gas density ratios; (4) corona
Page 8 CEEE Technical Publication Announcements - August 84

Power Systems Metrology , cont'd.

inception voltages; (5) voltage-time

characteristics; (6) relative and

absolute dielectric strengths; and (7)

breakdown probabilities.

Types of data considered include those

which apply to uniform and nonuniform

fields; ac, dc, and impulse voltages;

and possible effects of particles, sur- faces, interfaces, and corona. This

bibliography is intended to serve as a guide in locating data on breakdown

which are most relevant to particular

appl ications.

[(301) 921-3121]

Magnetic Materials and Measurements

Goldfarb, R.B. and Minervini, J.V.,

Calibration of AC Susceptometer for

Cylindrical Specimens, Review of

Scientific Instruments, 55 (5), pp.

761-764 (May 1984).

The absolute magnetic susceptibility of

cylindrical specimens is obtained with

an ac susceptometer whose calibration is

based on a calculation of mutual inductance. An axially magnetized cylinder

is modeled as a solenoid of the same

size. The mutual inductance between

such a solenoid and a pickup coil of

arbitrary dimensions is computed. The

susceptibility is then a function of the

mutual inductance, the cylinder length,

the magnitude and frequency of the ac magnetizing field, and the voltage induced on the pickup coil. Demagnetization factor and eddy-current effects are considered, an example is given, and

pickup coil compensation is discussed.

[(303) 497-3650]

Misakian, M., Electrical Parameters in

60-Hz Biological Exposure Systems and

Their Measurement: A Primer, NBS

Technical Note 1191 (April 1984).

This report presents material intended

to facilitate the measurement of a number of electrical parameters that are of importance during bioeffects research

involving 60-Hz electric and magnetic

fields. The parameters that are

considered are the elect ric field

strength E, the magnetic induction or flux density B, field uniformity,

harmonic content, phase relations

between field components, and corona. Descriptions of the fields and methods

for their laboratory generation are surveyed. The text is purposely

elementary with references provided to

aid the interested reader in obtaining a fuller understanding of many of the

topics. It is shown that it is possible

to characterize reasonably well the

electric and magnetic fields used in

animal exposure studies with relatively simple instrumentation.

[(301) 921-3121]

Other Electrical Systems Topics

Anderson, W.E., Microcomputer-Based

Software for Management of Calibration

Service, NBSIR 84-2863 (April 1984).

The majority of the calibration customers' concerns are directed not to the

technical details of the calibration

service but to the timely delivery of

that service. It is therefore proper

that the calibration services be closely

managed. For a Group or Division with a large calibration load, this can be a difficult task. The Applied Electrical

Measurements Group of the Electrosystems

Division has developed microcomputerbased software to provide considerable

assistance to the calibration manager.

With this database software, complete

information on the status of all the

calibration jobs is instantly available.

[(301) 921-3121]

Palla, J.C. and Oravec, B.A., Compilers;

Sorrells, J.R., Editor, Electrical

and Electronic Metrology: A Bibliography of NBS Electrosystems Division's

Publications, NBS List of Publications 94 (March 1984).

This bibliography lists the publications
CEEE Technical Publication Announcements - August 84 Page 9

Other Electrical Systems Topics , cont'd.

of the Electrosystems Division, Center

for Electronics and Electrical Engineering, NBS, and of its predecessor sec- tions, for the period January 1968 to

March 1984. A brief description of the

Division's technical program is given in

the introduction.

[Contact: Sorrells, (301) 921-2727]

ELECTROMAGNETIC INTERFERENCE

Crawford, M.L. and Koepke, G.H.,

Operational Considerations of a Reverberation Chamber for EMC Immunity

Measurements - Some Experimental

Results, Proc. 1984 IEEE National

Symposium on Electromagnetic Compatibility, pp. 47-54 [paper given at

Symposium, San Antonio, Texas, April

24-26, 1984].

This paper describes measurement procedures and results obtained from evaluation of a 2.74 m x 3.05 m x 4.57 m shielded chamber modified into a mode

tuned reverberation chamber. A brief

description of the measurement setup is

given. The measurements described

include an evaluation of the chamber's:

(1) excitation and receiving antennas'

voltage standing wave ratio and efficiency, (2) mode tuner effectiveness,

(3) loss, and (4) electromagnetic test

field statistical characteristics. In addition, the measurement results of two

techniques to determine the field

strength in the reverberation chamber

are compared. Results shown cover the

frequency range 200 MHz to 18 GHz.

[(303) 497-5497]

Driver, L.D. and Reeve, G.R., Application of a Systematic Approach to an Investigation of HF Interference to a Shipboard Radar Set, Proc. 1984 IEEE

National Symposium on Electromagnetic

Compatibility, pp. 221-228 [paper given

at Symposium, San Antonio, Texas, April

24-26, 1984].

This paper describes an investigation of

electromagnetic interference to a shipboard radar caused by a co-located HF, one kilowatt transmitter. The test

procedures and analysis used to determine the points of EM field entry, the

corrective measures taken, and the

results achieved are described.

[(303) 497-3911]

Ondrejka, A.R. and Adams, J.W.,

Shielding Effectiveness (SE) Measurement Techniques, Proc. 1984 IEEE

National Symposium on Electromagnetic

Compatibility, pp. 249-256 [paper given

at Symposium, San Antonio, Texas, April

24-26, 1984].

Five methods of measuring shielding

effectiveness of a lossy material are compared. Comparative measurement data

is shown, and insights are offered as to

why the results do or do not agree.

This is a preliminary analysis, not a definitive work.

[(303) 497-3309]

Wilson, P.F. and Ma, M.T. , Small Aperture Analysis of the Dual TEM Cell,

Proc. 1984 IEEE National Symposium on Electromagnetic Compatibility, pp. 365-

369 [paper given at Symposium, San

Antonio, Texas, April 24-26, 1984].

This paper decribes an analysis of dual

TEM cell coupling based on Bethe's small

aperture theory. This approach allows

one to model a variety of possible aperture shapes (circular, elliptical,

square, etc.), including material loaded

apertures of finite thickness. Measurements demonstrate that the theory

accurately predicts coupling for an un- loaded aperture.

[(303) 497-3842]

1984 CEEE CALENDAR

September 10-11 (Santa Clara, CA)

VLSI Packaging Workshop. Sponsored by
Page 10 CEEE Technical Publication Announcements - August 84

CEEE Calendar, cont'd.

NBS and the IEEE Components, Hybrids,

and Manufacturing Technology Society.

The VLSI Chip Packaging Workshop has

become the premier forum for technical

professionals in the field of package

development and analysis for VLSI

integrated circuits. The Workshop

addresses large chips, high-lead-count

packages, conventional and pin-gridarray chip-carriers, TAB and wire

bonding, and electrical and thermal

performance of packages. All attendees

are expected to be specialists working

in the field, and to participate in the

discussions. The Workshop is conducted

as a single plenary session, with each

of the four sessions containing a number

of half-hour papers in addition to

several shorter technical updates on current work. [Contact: G.G. Harman

(301) 921-3621]

October 2-3 (Boulder, CO)

Symposium on Optical Fiber Measurements.

This symposium, the third in the series

of biennial meetings, is co-sponsored by

the National Bureau of Standards, the

Optical Society of America, and the

Optical Waveguide Communications

Committee of the Institute of Electrical

and Electronics Engineers. Papers have

been solicited "for any experimental or analytical aspect of the characterization of optical fibers and fiber optics

systems, including attenuation,

bandwidth/distortion, dispersion, index

profile, cut-off wavelength, mode

diameter/core geometry, fiber-device

(e.g., joint, coupler. multiplexer)

evaluation, physical measurements, link

parameters (e.g., concatenation),

polarization characteristics, system

performance, field measurements, and

standards."

[Contact: Douglas L. Franzen (303)

497-3346]

October 15-17 (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers. The Symposium is the

principal forum for the exchange of

information on the physics and

technology of materials for high-power

lasers. Topics to be discussed include

new materials, bulk damage phenomena,

surface and thin film damage, design

considerations for high-power systems,

and fundamental mechanisms of laserinduced damage. The series of

conference proceedings resulting from

these annual symposia has collectively

become the principal repository of

information on optics for all aspects of

high-power/high-energy lasers, including, in addition to the subjects given

above, environmental degradation,

durability, fabrication, material growth

and deposition processes, and testing.

[Contact: Aaron A. Sanders (303)

497-5341]

November 6-8 (Las Vegas, NV)

1984 Government Microcircuit

Applications Conference (GOMAC). This

Conference, for which NBS serves as one

of a number of Government sponsors,

includes sessions covering applications

of silicon and gallium arsenide

microelectronic circuits, circuit design

and packaging considerations,

reliability considerations, radiation

hardness, signal processing

applications, and other systems

applications. With respect to circuits,

specific sessions are concerned with

memory technology, analog-to-digital and

digital-to-analog data converters,

gallium arsenide digital devices, and

gallium arsenide analog monolithic

integrated circuits. Conference

attendance is restricted to U.S.

citizens and immigrant aliens.

[Contact: Jay Morreale (212) 620-3371]
CEEE Technical Publication Annoucements - August 84 Page 11

NEW STANDARD REFERENCE MATERIALS

Two new Standard Reference Materials

(SRMs) for calibrating equipment used to

make spreading resistance measurements

have been released by the Semiconductor

Materials and Processes Division to the

NBS Office of Standard Reference Materials for sale to the public. SRM 2526

applies to ( 111) -oriented p-type silicon

surfaces and SRM 2527 to XHl)-oriented

n^-type silicon surfaces. Each SRM con- sists of a set of 16 specimens of silicon, approximately 6 x 12 mm in area and

mounted on beveled metal blocks for

convenient use in calibrating commercial

spreading resistance equipment. These

silicon chips have resistivities ranging

from about 0.001 to 200 J2*cm. The un- certainties in resistivity range typically from 2 to 5 percent for £-type

specimens and from 4 to 10 percent for

£-type. Two companion SRMs for (100)

silicon surfaces are about to be re- leased (2528, p-type and 2529, n-type)

.
Page 12 CEEE Technical Publication Announcements - August 84

CEEE SPONSORS

National Bureau of Standards

Department of Defense

Defense Advanced Research Project

Agency; Calibration Coordination

Group; Defense Nuclear Agency;

National Security Agency

U.S. Ai r Force

Air Force Office of Scientific

Research; Air Force Satellite

Control Facility, Camp Parks;

Bolling Air Force Base; Hanscom

Field; Newark Air Force Station;

Rome Air Development Center; Space

Division; Wright-Patterson AFB

U.S. Army

Aberdeen Proving Ground; Aviation

Systems Command; Ballistic Missile

Defense Systems Command; Fort

Huachuca; Fort Monmouth; Harry

Diamond Laboratories; Materials &

Mechanics Research Center

U.S. Navy

Aviation Logistics Center (Patuxent

River); Metrology Engineering Center

(Seal Beach); Naval Air Systems

Command; Naval Air Test Center;

Naval Sea Systems Command; Naval

Ship Research & Development Center;

Naval Ship Systems Engineering

Station; Naval Surface Weapons

Center; Naval Weapons Support Center

(Crane); Office of Naval Research

Department of Energy

Bonneville Power Administration;

Energy Systems Research; Fusion

Energy

Department of Health and Human Services

Food and Drug Administration

National Center for Devices and

Radiological Health

National Institute for Occupational

Safety and Health

Department of Justice

Law Enforcement Assistance

Admi ni St rat ion

Department of Transportation

National Highway Traffic Safety

Administration

Charles Stark Draper Laboratory

Environmental Protection Agency

GTE Satellite Corporation

International Copper Research

Association

International Telecommunications

Satellite Organization

Massachusetts Institute of Technology

National Aeronautics and Space

Admi ni St rat ion

Lewis Research Center

National Radio Astronomy Observatory

National Security Agency

RCA

Sandia National Laboratories

University of California Los Alamos

Scientific Laboratory
NBS-114A (REV. 2-80) U.S. DEPT. OF COMM.

BIBLIOGRAPHIC DATA

SHEET (See instructions)

1. PUBLICATION OR

REPORT NO.

NBSIR 84-2927

2. Performing Organ. Report No. 3. Publication Date

August 1984

4.

TITLE AND SUBTITLE

Center for Electronics and Electrical Engineering Technical Publication Announcements

Covering Center Programs, April - June 1984 with 1984 CEEE Events Calendar

5.

AUTHOR(S)

J. Franklin Mayo-Wells, Compiler

6.

PERFORMING ORGANIZATION (If joint or other than NBS, see instructions)

NATIONAL BUREAU OF STANDARDS

DEPARTMENT OF COMMERCE

WASHINGTON, D.C. 20234

7. Contract/Grant No.

8. Type of Report & Period Covered

April - June 1984

9.

SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City. State. ZIP)

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

10.

SUPPLEMENTARY NOTES

All technical information included in this document has been approved for

publication previously

I I Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11.

ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bibliography or literature survey, mention it here)

This is the first issue of a quarterly abstract journal covering the work of the

National Bureau of Standards Center for Electronics and Electrical Engineering.

This issue of the Center for Electronics and Electrical Engineering Technical

Publication Announcements covers the second quarter of calendar year 1984. Abstracts

are provided by technical area for papers published this quarter.

12.

KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by rem/co/on*

antennas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers;

semiconductors; superconductors

13. AVAILABILITY

Unlimited For Official Distribution. Do Not Release to NTIS

I I Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C.

20402.

Order From National Technical Information Service (NTIS), Springfield, VA. 22161

14. NO. OF

PRINTED PA'_,f S 15

15. Price

$7.00

A 4 ' I- »
CENTER FOR

ELECTRONICS AND ELECTRICAL ENGINEERING

EUCTROSYSTDIS

DIVtSION

JAppTied Oectricil IMeasunmenU

H

Electronic Instrumentotiofl and MetrolQQf

aECTMMAGNETi:

FEIOS mxM

H

Antenna SystaoB

Mitrolouf H

rieids CharacterizatMO H

Interference CharacterizatiM

EUCntOMAGMniC

TECW40LD6Y UVSiON

'^llicroiavi MetroloQf

JOptical ElectriK

IMotraiogy

JCryoeiectnaict

IMitriloiy

Superconductors

and Magnetic

Materials

SEMICONOUCTOI

MATERIALS AND

PROCESSES

DIVISION

H

iSicon

ICharactorizatiOR

Process Control Moasuronoits

HMcrometrolD|]f

H

Compound

Soiniconductir HProcessing facit)f

SEMCONOUCTQI

DEVICES AND

CMQjrrs

DivisnN

H

Mtigrated

Circuit Tost

Structures

Dovicf aiM

Process

Modeling

I

DsVico Metroiogjf

NtS/CEEE/FEI E4

KEY CONTACTS

Center (720)

Di rector

Acting Deputy Director

Administrative Officer

Electrosystems Division (722)

Chief

Electromagnetic Fields Division (723)

Chief

Electromagnetic Technology Division (724)

Chief

Mr. Judson C. French (301) 921-3357

Mr. Robert I. Scace (301) 921-3357

Vacant (301) 921-3357

Dr. Oskars Petersons (301) 921-2328

Mr. Charles K.S. Miller (303) 497-3131

Dr. Robert A. Kamper (303) 497-3535

Semiconductor Materials and Processes Divis ion (725)

Acting Chief W- Ctettinger (301) 921-3786

Semiconductor Devices and Circuits Division (726)

pu-of Dr. Kenneth F. Galloway (301) 921-3541

INFORMATION:

For additional information on the Center

Engineering, write to or call:

Center for Electronics and Electrical

National Bureau of Standards

Metrology Building, Room B-358

Gaithersburg, Maryland 20899

for Electronics and Electrical

Engineering

Telephone (301) 921-3357

USCOMM-NBS-DC