NBS

PUBLICATIONS

NBSIR 81-2234

Microelectronic Test Patterns

NBS-12 and NBS-24

NAT'L INST. OF STAND & TECH

AlllOb MDEETE

G. P. Carver, R. L. Mattis, and M. G. Buehler

Electron Devices Division

Center for Electronics and

Electrical Engineering

National Engineering Laboratory

U S. Department of Commerce

National Bureau of Standards

Washington, DC 20234

May 1981

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81-2234

i 1981

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I S. DEPARTMENT OF COMMERCE

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NBSIR 81-2234

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, L/ xJ MICROELECTRONIC TEST PATTERNS

NBS-12 AND NBS-24

G. P. Carver, R. L. Mattis, and M. G. Buehler

Electron Devices Division

Center for Electronics and

Electrical Engineering

National Engineering Laboratory

U.S. Department of Commerce

National Bureau of Standards

Washington, DC 20234

May 1981

U.S. DEPARTMENT OF COMMERCE, Malcolm Baldrige, Secretary

NATIONAL BUREAU OF STANDARDS, Ernest Ambler, Director
.
Table of Contents

Page

Abstract 1

1 . Introduction 1

2. Design Rules 2

3. Process Notes ..... 2

4. Microelectronic Test Pattern NBS-12 3

5. Microelectronic Test Pattern NBS-24 3

Acknowledgments 5

References 5

List of Tables

Page

1. Test Pattern NBS-12 6

2. Test Pattern NBS-24 22

List of Figures

Page

1. Outline drawing of test pattern NBS-12 17

2. Outline drawing of quadrant A of NBS-12 18

3. Outline drawing of quadrant B of NBS-12 19

4. Outline drawing of quadrant C of NBS-12 20

5. Outline drawing of quadrant D of NBS-12 21

6. Outline drawing of test pattern NBS-24 32

7. Outline drawing of quadrant A of NBS-24 33

8. Outline drawing of quadrant B of NBS-24 34

9. Outline drawing of quadrant C of NBS-24 35

10. Outline drawing of quadrant D of NBS-24 36

iii
,

* • .*•

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iwi It •

•
Microelectronic Test Patterns

NBS-12 and NBS-24

G. P. Carver, R. L. Mattis,

and M. G. Buehler

Electron Devices Division

National Bureau of Standards

Washington, DC 20234

Microelectronic test patterns NBS-12 and NBS-24 are modular developmental patterns for experimentally evaluating improved designs of

certain test structures. NBS-12 addresses geometric design considerations for the cross-bridge sheet resistor test structure. NBS24 contains a variety of preliminary designs for the integrated

gated-diode electrometer and a series of variations on the design

of the MOSFET dc profiler. Both patterns also include assorted

process parameter test structures. Tables of design parameters,

functional descriptions of the test structures in each pattern, and

computer-composed outline drawings showing all of the test structures are included.

Key Words: Cross-bridge sheet resistor; integrated gated-diode

electrometer; microelectronic test pattern; microelectronic test

structure; MOSFET dc profiler.

1 . INTRODUCTION

This report provides design information for the various microelectronic test

structures contained in test patterns NBS-12 and NBS-24. Both of these test

patterns are developmental in nature. Each was assembled primarily for verification of the design of one or more types of test structures. Neither con- tains all the relevant structures necessary to assess a process or to evaluate material quality [1]. Thus, these test patterns are not expected to find

widespread application. However, it is desirable to document both patterns

to facilitate the interpretation of experimental work using these test structures without repetition of the descriptions of the particular test structures used in each case. The design information in this report is presented

in tables which list the geometrical parameters of each test structure and in

outline drawings of the pattern quadrants.

Test pattern NBS-12 was designed primarily for experimental evaluation of designs and models for the cross-bridge sheet resistor test structure [2,3] . This test pattern contains several groups of cross and cross-bridge sheet re- sistors with incrementally different linewidths. Sheet resistor designs are repeated in the various conducting layers of the fabrication process. In addition, there are specialized bridge sheet resistors which contain bridge

voltage taps with incrementally different tap widths, and there are sequences

of bridge sheet resistors which have different distances between one current

contact and the adjacent voltage tap [3]

.

In addition, certain other test

structures and devices unrelated to the primary purpose of the test pattern

were included in order to enable preliminary design evaluation data to be obtained.

1
Test pattern NBS-24 was designed for evaluation of designs for the integrated

gated-diode electrometer [4,5] and for investigation of short-channel effects

and other limitations on the usable accuracy of the MOSFET dc profiler

[6,7,8]. Integrated gated-diode electrometer test structures are present

with a variety of gated-diode shapes. Each shape is repeated four times,

fabricated using either polysilicon or metal for the diode gate and either

with or without a channel stop diffusion. The four-terminal MOSFET profilers

have different channel width-to-length ratios, different shapes, and variations in other design details. Also as in NBS-12, test pattern NBS-24 contains some parameter test structures such as contact resistors and cross- bridge sheet resistors to support the primary developmental studies.

Both test patterns employ modular test structures and a 2-by-10 probe-pad

array [9]

.

2. DESIGN RULES

The following design rules were observed for test patterns NBS-12 and

NBS-24:

1. Minimum linewidth: 6 ym.

2. Minimum base (source/drain) to channel stop separation: 8 ym.

3. Minimum source-to-drain separation: 10 ym.

4. Minimum metal separation: 8 ym.

5. Minimum metal overlap at contacts: 4 ym.

6. Minimum diffusion overlap at contacts: 4 ym.

7. Minimum contact window dimensions: 6 ym.

8. Minimum polysilicon separation: 8 ym.

9. Lines on each mask level are located so that they do not coincide

with lines on another mask level (no coincident lines).

The design rules were generally maintained, except that certain circumstances

on NBS-24 required that they be violated. The source-to-drain separation of

the source-follower electrometer transistor is 6 ym, violating rule 3. The

avoidance of coincidental lines (rule 9) is violated by the implant and sec- ond gate oxide mask levels of test pattern NBS-24.

3. PROCESS NOTES

The process suitable for NBS-12 is a modified bipolar process which contains

a gate oxidation step and is referred to as a BiMOS process [10]. The base

diffusion for the bipolar transistors also serves as the source/drain diffusion for the MOSFETs . Similarly, the emitter diffusion for the bipolar transistors can be used to reduce the contact resistance to collector regions and

can serve as a channel stop. Certain compromises in the details of the processing are made so as to accommodate both uses for each diffusion. The

terms base and source/drain or emitter and channel stop are used interchangeably as regards the diffusions.

The process for NBS-24 is an MOS process which includes a channel stop. The

mask set can be used for a nonaligned gate process or for a self-aligned gate

process, depending on the mask sequence. When the nonaligned gate process

sequence is used, many integrated gated-diode electrometers with metal gates

2
and with polysilicon gates, which have the same design geometries, will

function. When the self-aligned gate process sequence is used, only the

structures designed for self-aligned polysilicon gates will function. The

mask levels and process sequence are slightly different for the two test

patterns and are given in the discussions of the individual patterns. The

mask sets can be used to form either n-channel or p-channel MOSFETs ; the

choice depends on the conductivity type of the starting material.

4. MICROELECTRONIC TEST PATTERN NBS-12

Of the 122 test structures contained in test pattern NBS-12, 91 are cross and/or bridge structures for use in evaluating the design of the cross-bridge

sheet resistor test structure. The pattern size is 5.08 mm (200 mil) by 3.51 mm (138 mil). There are seven mask levels. In the order they would be used

during fabrication, they are:

1. base contact

2. base

3. emitter

4. gate oxide

5. contact

6. metal

7. passivation

Table 1 contains the specifications of all of the test structures in test

pattern NBS-12. The table is divided into seven parts. The first part lists

all of the individual structures. Succeeding parts contain functional descriptions of the cross sheet resistors, cross-bridge sheet resistors, transistors, advanced or integrated test structures, and miscellaneous structures, including the NBS-12 logo and alignment marks. The last part of

table 1 is a chart which shows the identification of the corresponding

crosses and cross-bridges in the various conducting layers.

Throughout table 1, the computer numbers of the structures are used as a key.

The computer number refers to the file number under which the digital information describing that structure was stored in a computer during composition

of the pattern.

The pattern is divided into four quadrants. The entire pattern is shown in

figure 1. Figures 2 through 5 show each of the four quadrants with each test

structure labeled according to its computer number.

5. MICROELECTRONIC TEST PATTERN NBS-24

The developmental test pattern NBS-24 contains designs for the integrated

gated-diode electrometer [4,5] and for the MOSFET dc profiler [6,7,8] test

structures, along with a variety of parameter test structures. This test

pattern is a square chip, 5.08 mm (200 mil) on a side. There are nine mask

levels and two process sequences associated with this test pattern.

The mask levels are:

1. source/drain

3
2. channel stop

3. implant

4. gate oxide

5. polysilicon

6. second gate oxide

7. contact

8. metal

9. passivation

The implant mask opens up windows in the gate region of selected test structures (primarily MOSFET dc profilers) and defines a cross-bridge sheet resistor and part of a contact resistor. The second gate oxide mask affects only

the dual gate MOSFET dc profiler [4]

.

For a nonaligned gate MOS process, the mask sequence is 1, 2, 3 (if used), 4,

5, 6 (if used), 7, 8, and 9. All but a few devices will function when this

sequence is used. The devices that will not function are those which were designed to have self-aligned polysilicon gates. The self-aligned gate

integrated gated-diode electrometers are located in quadrant D. Self-aligned

gate MOSFETs are in quadrants C and D. The mask sequence for the selfaligned gate process used to properly fabricate the self-aligned gate structures is 2, 1, 5, 7, 8, and 9. Most of the rest of the structures in the

pattern will not function if the self-aligned gate process is used.

The pattern is divided into four quadrants. Table 2 contains the descriptions, locations, and identifications of the 123 test structures contained in

test pattern NBS-24. In this table, the computer number of a structure is

not unique. This computer number refers to the complete set of geometrical

shapes for a generic structure present in all mask levels, while a particular

structure on the test pattern is typically composed of the shapes on only

some of the mask levels. All cross bridges, for example, have the same com- puter number even though the conducting channel is formed by a different layer for each structure.

Part V of table 2 gives brief descriptions and geometrical specifications for

the gated diodes used in the integrated gated-diode electrometer test structures on NBS-24. Inverted refers to gated diodes where the diode junction

surrounds the gate, instead of the reverse which is commonly encountered.

Guarded means there is a field plate surrounding the gated diode so that any

surface leakage can be controlled. This scheme replaces the channel stop

which is usually used.

The complete pattern is shown in figure 6. Figures 7 through 10 show each of

the four quadrants with each test structure labeled according to its design

code. The integrated gated-diode electrometers have two design codes because

the gated diodes and the electrometer amplifiers were designed separately.

Structures can also be located using the probe^pad numbers appearing in

table 2. The numbering scheme starts with the upper left probe pad of each

column (2-by-10 array) as pad number 1 and proceeds sequentially down the

left side of the array and up the right side of the array. In quadrant B,

there are a few structures located outside the 20-pad columns. These structures are addressable using the 2-by-10 probe card.

4
Acknowledgments

The authors thank Jennifer Stickley for helping to assemble the tables.

REFERENCES

1. Carver, G. P. , Linholm, L. W., and Russell, T. J., The Use of Microelectronic Test Structures to Characterize IC Materials, Processes, and Processing Equipment, Solid. State Technology .23 (9), 85-92 (September 1980).

2. Buehler, M. G. , Grant, S. D. , and Thurber, W. R. , Bridge and van der

Pauw Sheet Resistors for Characterizing the Linewidth of Conducting

Layers, J. Eleatrochem. Soc. 125 , 650-654 (1978).

3. Carver, G. P. , and Mattis, R. L. , Design Considerations for the CrossBridge Sheet Resistor (to be published).

4. Carver, G. P. , and Buehler, M. G. , The Development of Test Structures

for Characterization of the Fabrication and Performance of RadiationHardened CCD Imagers, NBSIR 79-1444 (May 1979).

5. Carver, G. P. , and Buehler, M. G. , An Analytical Expression for the

Evaluation of Leakage Currents in the Integrated Gated-Diode Electrometer, IEEE Trans . Electron Devices ed-27 , 2245-2252 (1980)

6. Buehler, M. G. , Dopant Profiles Determined from Enhancement-Mode MOSFET

dc Measurements, Appl» Phys. Lett . 3_1^, 848-850 (1977).

7. Buehler, M. G. , The D-C MOSFET Dopant Profile Method, J- Electroahem. SOC . ^27 , 701-704 (1980).

8. Buehler, M. G. , Effect of the Drain-Source Voltage on Dopant Profiles

Obtained From the dc MOSFET Profile Method, IEEE Trans . Electron Devices

ED-27 , 2273-2277 (1980).

9. Buehler, M. G. , Comprehensive Test Patterns with Modular Test Structures: The 2 by N Probe-Pad Array Approach, Solid State Technology 2j2

(10), 89-94 (October 1979).

10. Leedy, T. F. , and Liu, Y. M. , Semiconductor Measurement Technology:

Microelectronic Processing Laboratory at NBS, NBS Spec. Publ. 400-53

(December 1978).

5
Table 1. Test Pattern NBS-12.

Part

Part

Part

Part

Part

Part

Part

Notes

I. Test Structure List by Computer Number

II. Cross Sheet Resistors; Functional Descriptions

III. Cross-Bridge Sheet Resistors; Functional Descriptions

IV. Transistors; Functional Descriptions

V. Advanced Test Structures; Functional Descriptions

VI. Miscellaneous and Integrity Testers; Functional Descriptions

VII. Cross and Cross-Bridge Sheet Resistor Correspondence Chart

1. Abbreviations: W = Width, L = Length, A = Area, D = Contact arm width. Dimensions

associated with these parameters are given in units of ym.

2. Layout numbers are coded in the form: Q(r,c), where Q Quadrant (A, B, C, or D), r = contact row number, and c = contact column number. The position of the uppermost lefthand contact of a particular structure determines its layout number. Each column

is associated with pairs of contact pads.

3. Diffusion notation scheme is consistent for the BIMOS process, viz. t if the bulk wafer

or epi-layer is n-type, the isolation and base diffusions would be p

+ and the emitter

diffusion would be n

+ .

4. Design numbers refer to the order in which the original multicolor drawings are filed.

6
1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

30

31

32

33

34

35

Table 1, Part I. Test Structure List by Computer Number.

Test Pattern

Layout Design

Number Description Number

A (1,1) Metal-to-base contact resistor 55

A (2,1) Base-under-emitter cross sheet resistor 20

A (3,1) Base-under-emitter cross-bridge sheet resistor 18

A (4,1) Base-under-emitter cross-bridge sheet resistor 14

A (1,2) Metal -to-emitter contact resistor 56

A (2,2) Base-under-emitter cross sheet resistor 20B

A (3,2) Base-under-emitter cross-bridge sheet resistor 18A

A (4,2) Base-under-emitter cross-bridge sheet resistor 15

A (1,3) Bipolar transistor 35C

A (2,3) Base-under-emitter cross sheet resistor 20C

A (3,3) Base-under-emitter cross-bridge sheet resistor 1 8B

A (4,3) Base-under-emitter cross-bridge sheet resistor 16

A (1,4) Bipolar transistor 35F2

A (2,4) Base-under-emitter cross sheet resistor 20D

A (3,4) Base-under-emitter cross-bridge sheet resistor 19

A (4,4) Base-under-emitter cross-bridge sheet resistor 17

A (1,5) Bipolar transistor 35F1

A (2,5) Bipolar transistor 35D

A (1,6) Bipolar transistor 35G1

A (2,6) Bipolar transistor 35G2

A (3,6) Base-under-emitter double-bridge sheet resistor 30

A (4,6) Base-under-emi tter double-bridge sheet resistor 31

B (1,1) Base cross-bridge sheet resistor 18

B (2,1) Gated base cross-bridge sheet resistor 24D

B (4,1) Base cross-bridge sheet resistor 14

B (1,2) Base cross-bridge sheet resistor 18A

B (2,2) Partially-gated base cross-bridge sheet resistor 24D

B (4,2) Base cross-bridge sheet resistor 15

B (1,3) Base cross-bridge sheet resistor 18B

B (3,3) Base cross-bridge sheet resistor 24D

B (4,3) Base cross^bridge sheet resistor 16

7
Computer

Number

Test Pattern Layout

Number Description

Design

Number

39 B (1,4) Base cross-bridge sheet resistor 19

41 B (4,4) Base cross-bridge sheet resistor 17

42 B (1,5) Collector surface-channel cross resistor 38

43 B (2,5) Gated collector surface-channel cross resistor 39

44 B (3,5) Base surface-channel cross resistor 40

45 B (4,5) Gated base surface-channel cross resistor 41

46 B (2,4) Base quadrate-cross sheet resistor 32

47 B (3,4) Base quadrate-cross sheet resistor 34

48 B (1,8) Base double-bridge sheet resistor 30

49 B (2,8) Base double-bridge sheet resistor 31

50 B (1,6) Base y-factor evaluation tester #1 11A+11B

51 B (3,6) Base Y-factor evaluation tester #2 11C+11D

52 B (1,7) Base contact- to-corner distance study bridge resistor #5 13-5

53 B (2,7) Base contact-to-corner distance study bridge resistor #4 13-4

54 B (3,7) Base contact-to-corner distance study bridge resistor #3 13-3

55 B (4,7) Base contact-to-corner distance study bridge resistor #2 13-2

56 B (5,7) Base contact-to-corner distance study bridge resistor #1 13-1

57 C (1,1) Metal cross sheet resistor 21

58 C (2,1

)

Metal cross sheet resistor 20

59 C (3,1) Metal cross-bridge sheet resistor 18

60 C (4,1) Metal cross-bridge sheet resistor 14

61 C (1,2) Metal cross sheet resistor 22

62 C (2,2) Metal cross sheet resistor 20B

63 C (3,2) Metal cross-bridge sheet resistor 18A

64 C (4,2) Metal cross-bridge sheet resistor 15

65 C (1,3) Metal cross sheet resistor 23

66 C (2,3) Metal cross sheet resistor 20C

67 C (3,3) Metal cross-bridge sheet resistor 18B

68 C (4,3) Metal cross-bridge sheet resistor 16

69 C (1,4) Metal cross sheet resistor 24

70 C (2,4) Metal cross sheet resistor 200

71 C (3,4) Metal cross-bridge sheet resistor 19

72 C (4,4) Metal cross-bridge sheet resistor 17

8
74

75

76

77

78

79

80

81

82

83

84

85

86

87

88

89

90

91

92

93

94

95

96

97

98

99

100

01+1

03+1

104

105

112

Test Pattern

Layout Design

Number Description Number

C (1,5) Metal continuity tester 25

C (1,8) Emitter-in-base quadrate-cross sheet resistor 32

C (2,8) Emitter-in-base quadrate-cross sheet resistor 34

C (3,8) Metal double-bridge sheet resistor 30

C (4,8) Metal double-bridge sheet resistor 31

C (1,6) Metal y-factor evaluation tester #1 11A+11B

C (3,6) Metal y-factor evaluation tester #2 11C+11D

C (1,7) Metal contact-to-corner distance study bridge resistor #5 13-5

C (2,7) Metal contact-to-corner distance study bridge resistor #4 13-4

C (3,7) Metal contact-to-corner distance study bridge resistor #3 13-3

C (4,7) Metal contact-to-corner distance study bridge resistor #2 13-2

C (5,7) Metal contact-to-corner distance study bridge resistor #1 13-1

D (1,1) Base cross sheet resistor 20

D (2,1) Emitter-in-base cross sheet resistor 20

D (3,1) Emitter-in-base cross-bridge sheet resistor 18

D (4,1) Emitter-in-base cross-bridge sheet resistor 14

D (1,2) Base cross sheet resistor 20B

D (2,2) Emitter-in-base cross sheet resistor 20B

D (3,2) Emitter-in-base cross-bridge sheet resistor 18A

D (4,2) Emitter-in-base cross-bridge sheet resistor 15

D (1,3) Base cross sheet resistor 20C

D (2,3) Emitter-in-base cross sheet resistor 20C

D (3,3) Emitter-in-base cross-bridge sheet resistor 18B

D (4,3) Emitter-in-base cross-bridge sheet resistor 16

D (1,4) Base cross sheet resistor 20D

D (2,4) Emitter-in-base cross sheet resistor 20D

D (3,4) Emitter-in-base cross-bridge sheet resistor 19

D (4,4) Emitter-in-base cross-bridge sheet resistor 17

A (1,7) Gated collector-channel cross-bridge resistor 37B

A (2,7) Gated collector-channel cross-bridge resistor 37A

A (4,7) Collector-channel cross-bridge resistor 37A

A (4,8) Collector planar four-probe resistivity tester 69

A (3,5) Bipolar transistor 35H

9
113

114

115

116

117

118

119

120

121

122

123

124

125

126

127

129

130

131

132

133

134

135

136

137

138

139

140

Test Pattern

Layout

Number Description

Design

Number

A (4,5) Bipolar transistor 35E1

A (5,5) Bipolar transistor 35E2

D (1,5) Field effect transistor 48

D (2,5) Field effect transistor 45

D (3,5) Field effect transistor 46

D (4,5) Field effect transistor 49

D (5,5) Field effect transistor 47

D (1,6) Gated collector surface-channel cross resistor 50

0 (2,6) Gated base cross sheet resistor 51

D (3,6) Gated base cross sheet resistor 52

D (5,6) Gated collector cross sheet resistor 53

D (1,7) Gated collector cross sheet resistor 54

Center NBS-12 logo 57

A (5,8) Alignment markers 58

D (2,7) Gated base-collector diode with source-follower FET

and saturated high-impedance FET load

59

D (4,7) Gated base-collector diode with source-follower FET 59C

D (1,8) Gated base-collector diode with common-source FET and

saturated low-impedance FET load

60

D (2,8) Base-collector diode with common-source FET and saturated

low- impedance FET load

60B

D (4,8) Gated base-collector diode with common-source FET 60C

B (4,8) Gated base-collector diode 61

B (5,8) Common-source FET with saturated low-impedance FET load 62

A (1,8) Capacitor 63

A (2,8) Capacitor 64

A (3,8) Pinhole tester 65

A (2,8) Contact tester 68

D (5,7) Pinhole tester 66

D (5,8) Pinhole tester 67

10
Table 1, Part II. Cross Sheet Resistors; Functional Descriptions.

Functional Type Layer

Computer Numbers

of Structures Specifications/Notes

Greek cross Metal 58, 62, 66, 70 W = 6, 12, 18, 24; D = 6.

Greek cross Emi tter-in-base 86, 90, 94, 98 W = 6, 12, 18, 24; D = 6.

Greek cross Base-under-emi tter 2, 6, 10, 14 W = 6, 12, 18, 24; D = 6.

Greek cross Base 85, 89, 93, 97 W = 6, 12, 18, 24; D = 6.

Greek cross Metal 57, 61, 65 W = 6; different exposure geometries

at intersection of cross.

Greek cross Metal 69 W = 6; horizontal offset in vertical

arms of cross.

Gated Greek cross Base 121, 122 Gate oxide, field oxide.

Gated Greek cross Collector 123, 124 Gate oxide, field oxide.

Gated Greek cross Base surface-channel 45 W = 24.

Gated Greek cross Collector surface-channel 43 W = 20.

Greek cross Base surface-channel 44 W = 24.

Greek cross Collector surface-channel 42 W = 20.

Gated Greek cross Collector surface-channel 120 W = 44.

Quadrate cross Emi tter- in- base 74 Intersection A = 24 * 24.

Greek cross Emi tter- in- base 75 W = 24; cf structure 74.

Quadrate cross Base 46 Intersection A = 24 * 24.

Greek cross Base 47 W = 24; cf structure 46.

11
Table 1, Part III. Bridge and Cross-Bridge Sheet Resistors; Functional Descriptions.

Functional Type Layer

Computer Numbers

of Structures Speci f i cati ons/Notes

Cross-bridge Metal 59, 63, 67, 71 W = 6, 12, 18, 24; D = 6. Cross-bridge Emitter- in-base 87, 91, 95, 99 W = 6, 12, 18, 24; D = 6.

Cross-bridge Base-under-emi tter 3, 7, 11, 15 W = 6, 12, 18, 24; D = 6.

Cross-bridge Base 30, 33, 36, 39 W = 6, 12, 18, 24; D = 6.

Cross-bridge Metal 60, 64, 68, 72 W = 6, 12, 18, 24; D = 6; symmetry tabs.

Cross-bridge Emitter- in-base 88, 92, 96, 100 W = 6, 12, 18, 24; D = 6; symmetry tabs.

Cross-bridge Base-under-emi tter 4, 8, 12, 16 W = 6, 12, 18, 24; D = 6; symmetry tabs.

Cross-bridge Base 32, 35, 38, 41 W = 6, 12, 18, 24; D = 6; symmetry tabs.

Gated cross-bridge Base 31, 34, 37 Fully gated, partially

gated, ungated; symmetry

tabs.

Cross-bridge Collector surface-channel 101, 103, 104 Gated/no channel stop,

gated/channel stop,

ungated/channel stop.

Double bridge Metal 76, 77 W = 12 and 24, W = 6 and

24.

Double bridge Base-under-emi tter 21, 22 W = 12 and 24, W = 6 and

24.

Double bridge Base 48, 49 W = 12 and 24, W = 6 and

24.

Contact- to-corner distance

study bridge

Metal 80, 81, 82, 83, 84 Voltage tap-to-corner dis- tance = 80, 60, 40, 20,

0 .

Contact.-to-corner distance

study bridge

Base 52, 53, 54, 55, 56 Voltage tap-to-corner dis- tance = 80, 60, 40, 20,

0 . Y-factor evaluation tester Metal 78 W = 24; D = 6, 12, 18, 24. Y-factor evaluation tester Metal 79 W = 36; D = 6, 12, 18, 24. Y-factor evaluation tester Base 50 W = 24; D = 6, 12, 18, 24. Y-factor evaluation tester Base 51 W = 36; D = 6, 12, 18, 24.

12
Table 1, Part IV. Transistors; Functional Descriptions.

Functional Type

Computer Numbers

of Structures Specifications/Notes

Bipolar transistor 9 Emitter: L/W = 9; A = 18 x 162; emitter channel stop.

Bipolar transistor 13 Emitter: L/W = 9; A = 18 x 162.

Bipolar transistor 17 Emitter: L/W = 3; A = 18 x 54; emitter channel stop.

Bipolar transistor 18 Emitter: L/W = 3; A = 18 x 54.

Bipolar transistor 19 Emitter: L/W = 1 ; A = 18 x 18; emitter channel stop.

Bipolar transistor 20 Emitter: L/W = 1 ; A = 18 x 18.

Bipolar transistor 112 Emitter: L/W = 3; A = 24 x 72.

Bipolar transistor 113 Emitter: L/W = 3; A = 36 x 108.

Bipolar transistor 114 Emitter: L/W = 3; A = 54 x 162.

Field effect transistor 115 Channel L = 28; gate oxide; collector under gate; base

source/drain.

Field effect transistor 116 Channel L = 36; gate oxide;

emitter source/drain in a buried layer under gate*;base island.

Field effect transistor 117 Channel L = 28; gate oxide; base under gate; emitter source/

drain.

Field effect transistor 118 Channel L = 28; field

source/drain.

oxide; collector under gate; base

Field effect transistor 119 Channel L = 28; field oxide:; base under gate; emitter source/

drain.

*Implanted buried layer would be of the same conductivity type as the base diffusion.

13
Table 1, Part V. Advanced Test Structures; Functional Descriptions.

Functional Type

Computer Number

of Structure Notes

Gated base-collector diode with source- follower FET and saturated highimpedance FET load

127

Base-collector diode with source- follower FET

129 Same as 127, except no gate on load FET. (Requires external

load.)

diode and no resistive

Gated base-collector diode with commonsource FET and saturated low-impedance

FET load

13Q

Base- co llector diode with common-source

FET and saturated low-impedance FET

load

131 Same as 130, except no gate on diode.

Gated base-collector diode with common

source FET

132 Same as 130, except no load FET. external resistive load.)

(Requires

Gated base-collector diode 133 Bare gated diode without reset switch.

Common-source FET with saturated lowimpedance FET load

134 Amplifier of 130.
Table 1, Part VI. Miscellaneous and Integrity Testers; Functional Descriptions.

Functional Type Layer

Computer Numbers

of Structures Speci f i cati ons/Notes

Pinhole tester Emitter and collector field

and gate oxides

137

Pinhole tester Base oxide 139

Pinhole tester Isolation oxide 140

Oxide integrity

tester Emitter gate oxide breakdown

138

Contact tester Metal-to-emitter 5

Contact tester Metal-to-base 1

Planar four-probe

resistivity tester Collector 105 Measures resistivity of bulk wafer.

Alignment markers All 126 Visual inspection required.

Continuity tester Metal 73

Capacitor Metal-gate oxide-collector 135

Capacitor Metal-field oxide-collector 136

NBS-12 logo Metal 125 Test pattern identification number;

located at center of pattern.

15
Table 1, Part VII. Cross and Cross-Bridge Sheet Resistor Correspondence Chart,

by Computer Number.

Layer

Cross Sheet

Resistors

Cross-Bridge Sheet Resistors

With Symmetry Tabs Without Symmetry Tabs W

Metal 58 60 59 6

Metal 62 64 63 12

Metal 66 68 67 18

Metal 70 72 71 24

Emitter 86 88 87 6

Emitter 90 . 92 91 12

Emitter 94 96 95 18

Emitter 98 100 99 24

Base- under-emi tter 2 4 3 6

Base-under-emitter 6 8 7 12

Base-under-emi tter 10 12 11 18

Base-under-emi tter 14 16 15 24

Base 85 32 30 6

Base 89 35 33 12

Base 93 38 36 18

Base 97 41 39 24

16
QUADRANT

A

QUADRANT

_l i t ; izn

9i.*BI2 8313U0W3IUl'9H 92*1(1 p -pc m

•H (0 M

fa H <0

17

e

1.

Outline

drawing

of

test

pattern

NBS-12.

The

pattern

is

divided

into

four

quadrants.

Each

quadis

composed

of

test

structures

arranged

in

an

array

of

eight

columns.

In

each

column,

the

probe

pads
QUADRANT

18

ure

2.

Outline

drawing

of

quadrant A

of

NBS-12.

The

computer

number

for

each

test

structure

located

on

the

uppermost

left

probe

pad

of

the

structure.
QUADRANT

QIQOIP Qig

is] c: \E

f

u .k=f

m

m

PiMlEIPS

Qnod 00OOO

n

ii i

DD

I r

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,

1 ^ «= p

CO

CO

01 •H U) -H

19

ure

3.

Outline

drawing

of

quadrant

B

of

NBS-12.

The

computer

number

for

each

test

structure

located

on

the

uppermost

left

probe

pad

of

the

structure.
QUADRANT

QUO Qiq

o

oo

(=

a a £. 5L a. an MDM i . 1 l DMm

Ol aOD

~T_P

fl

.P LnPa P Qf|P

3

Z

=L

f

fC-, rJS

r

=Cf I

£

CD T *

3

3

r CD P =4 *

I

OJ

r p 3

r p

&=n

K

m

il

LJ"

io=n

o>m

JT

E P

T— P

Cn •w tn Cm -h

20

I

ure

4.

Outline

drawing

of

quadrant

C

of

NBS-12.

The

computer

number

for

each

test

structure

located

on

the

uppermost

left

probe

pad

of

the

structure.
QUADRANT

rsr u

—N-i F=“

K

O'

|

1

,

, L

1

CO

, , m

CO

J

1 msn —:

!

n

g | m

a

f

I t:

M tr

O' 1 -=

1 1=[

0*

=4

!=l

r 400 Li

—f »T 1 rrJ-fl JpJ| M <* L

i -J-H— »n

&fU!t- *n

MijilflMr=W

lO

O' L ——*f- «n

a

i

tfl—lal iTtT

5

u= Mi M»=|AJl

5 -U“!i—

[

«n

j pdO' L —i -t^=M

=4 M.ny i =4

i M-=nH k00

!l = !l—

I

iln

j

00 rt sn tn •H U)

fri -H

21

ure

5.

Outline

drawing

of

quadrant

D

of

NBS-12.

The

computer

number

for

each

test

structure

located

on

the

uppermost

left

probe

pad

of

the

structure.
Table 2. Test Pattern NBS-24.

Part I. Test Structures Contained in Quadrant A

Part II. Test Structures Contained in Quadrant B

Part III. Test Structures Contained in Quadrant C

Part IV. Test Structures Contained in Quadrant D

Part V. Gated Diode Geometrical Design Specifications

Notes: 1. Quadrant A is the upper left quarter of the pattern. Quadrants B, C, and D are the upper

right, lower left, and lower right quarters, respectively.

2. Abbreviations: W = width and L = length. Dimensions associated with these parameters are given in units of pm.

3. The probe-pad numbers refer to the probe-pad sequence within a 2-by-10 array. The pads are numbered from 1 at the upper left of the column to 10 at the lower left and from 11 to 20

beginning at the lower right and ending at the upper right. Several columns in,quadrant C have additional devices with pads above the top and below the bottom of the 2-by-10 array. These additional probe pads are not numbered.
Table 2, Part I. Test Structures Contained In Quadrant A.

Column

Number

1

1

1

1

2

2

2

2

3

3

3

3

A

4

A

4

5

5

Design Computer Probe Pad

Code(s) Number(s) Device Description Numbers

GD-1P

(A- IP)

11, 1 Gated-diode electrometer

Large rectangular gated diode

polys i 1 i con gate

1, 2, 3 18, 19, 20

CB-1 58 Cross-bridge resistor

source/drai

n

A, 5, 6 15, 16, 17

ILD-1 51 Inversion layer detector

gate oxide

7, 14

GD-1M

(A- 1M)

11, 1 Gated-oxide electrometer

Large rectangular gated diode

metal gate

8, 9, 10 11, 12, 13

GD-3P

(A-1P)

13, 1 Gated-diode electrometer

Small rectangular gated-diode

(probeabl e) polys i 1 i con gate

1, 2, 3 18, 19, 20

CB-2 58 Cross-bridge resistor

channel stop

A, 5, 6 15, 16, 17

IDL-2 51 Inversion layer detector

field oxide

7, 14

GD-3M

(A-1M)

13, 1 Gated-diode electrometer

Small rectangular gated-diode

(probeable)

metal gate

8, 9, 10 11, 12, 13

GD-6P

(A- IP)

16, 1 Gated-diode electrometer

Small rectangular gated diode

polysi 1 icon gate

1, 2, 3 18, 19, 20

CB-3 58 Cross-bridge resistor

metal

4, 5, 6 15, 16, 17

G 5 Ground 7, 14

GD-6M

(A-1M)

16, 1 Gated-diode electrometer

Small rectangular gated diode

metal gate

8, 9, 10 11, 12, 13

GD-2P

(A-1P)

12, 1 Gated-diode electrometer

Cross-shaped gated diode

pol ys i 1 i con gate

1, 2, 3 18, 19, 20

CB-4 58 Cross-bridge resistor

polys i 1 i con

A, 5, 6 15, 16, 17

G 5 Ground 7, 14

GD-2M

(A-1M)

12, 1 Gated-diode electrometer

Cross-shaped gated diode

metal gate

8, 9, 10

11, 12, 13

GD-10P

(A-1P)

20, 1 Gated-diode electrometer

Round gated diode

polys i 1 i con gate

1, 2, 3 18, 19, 20

CB-5 58 Cross-bridge resistor

i mpl ant

A, 5, 6 15, 16, 17

23
Column

Number

Des i gn Code (s) Computer

Number (s) Device Description

Probe Pad

Numbers

5 G 5 Ground 7, 1**

5 GP-1DM

(A-1M)

20, 1 Gated-diode electrometer

Round gated diode

metal gate

8, 9, 10

11, 12, 13

6 GD-7P

(A-1P)

17, 1 Gated-diode electrometer

Inverted large rectangular gated diode

pol ys i 1 i con gate

1, 2, 3 18, 19, 20

6 GD- 127 59 Gated-diode electrometer

NBS-12 cross shaped gated diode

4, 5, 6 15, 16, 17

6 G 5 Ground 7, 14

6 GD-7M

(A-1M)

17, 1

* Gated-diode electrometer

Inverted large rectangular gated diode

metal gate

8, 9, 10

11, 12, 13

7 GD- 1 1

P

(A-1P)

21, 1 Gated-diode electrometer

Inverted small rectangular gated diode

polys i 1 icon gate

1,2,3

18, 19, 20

7 CR-1 57 Contact resistor

Metal-to-polysi 1 icon

4, 5 16, 17

7 CR-3 57 Contact resistor

Metal-to-channel stop

6, 7 14, 15

7 GD- 1 1

P

(A-1M)

21, 1 Gated-diode electrometer

Inverted small rectangular gated diode

metal gate

8, 9, 10

11, 12, 13

8 GD- 1

P

(A-2P)

11, 3 Gated-diode electrometer

Large rectangular gated diode

polysi 1 icon gate

1, 2, 3 18, 19, 20

8 CR-2 57 Contact resistor

Metal -to- source/d rai

n

4, 5 16, 17

8 CR-4 57 Contact resistor

Meta 1 -to- i mpl ant

6, 7 14, 15

8 GP-1M

(A-2M)

11, 3 Gated-diode electrometer

Large rectangular gated diode

8, 9, 10 11, 12, 13 metal gate

24
Table 2, Part II. Test Structures Contained in Quadrant B.

Column Design Computer Probe Pad

Number Code(s) Number(s) Device Description Numbers

1 GD-9P

(A- IP)

19, 1 Gated-diode electrometer

Cross shaped gated diode (guarded)

polysi 1 icon gate

1, 2, 3, ** 18, 19, 20

1 G 5 Ground 17, 14

1 C-3PI 53 Capaci tor polysilicon-gate oxi de- imp lant

(no regrowth)

5, 6 15, 16

1 GD-8P

(a— ip)

18, 1 Gated diode electrometer

Inverted large rectangular gated diode

(guarded)

polysilicon gate

7, 8, 9, 10 11, 12, 13

2 GD-4P

(A-1P)

14, 1 Gated-diode electrometer

Large rectangular gated diode (guarded)

polysi 1 i con gate

1,2,3

17 / 18 ’, 19 , 20

2 G 5 Ground 4, 7

2 C-3 53 Capaci tor Metal-gate oxide-substrate

5, 6 15, 16

2 GD-5P

(A-1P)

15, 1 Gated-diode electrometer

Small rectangular gated diode (guarded)

polys i 1 i con gate

8, 9, 10

11, 12, 13, 14

3 60 Alignment markers

3 DGP 84 Dual gated MOSFET profiler 2, 3 18, 19, 20

3 G 5 Ground 1, 17

3 C-3F 53 Capaci tor Metal-field oxide-substrate

5, 6 15, 16

3 P-7F 79 "Practical" MOSFET profiler

Metal gate, field oxide

7, 8 13, 14

3 P-8SI 76 MOSFET profiler

polysilicon gate, implant (no regrowth)

9, 10 11,12

3 P-71 R 79 "Practical" MOSFET profiler

metal gate, implant (no regrowth)

4 GD-12 28 Gated-d i ode

Round gated diode metal gate

4 EA-1 55, 56 Electrical alignment test structure

sou rce/drain-to-con tact

1, 2, 3, 4, 5 16, 17, 18, 19, 20

4 EA-2 55, 56 Electrical alignment test structure

polysi 1 i con-to-contact

6, 7, 8, 9, 10

11, 12, 13, 14, 15

4 C-3

1

53 Capacitor

metal over implant (no regrowth)

5 C-4P 93 Capac i tor polysilicon-gate oxide-implant

25
Column

Number

Des i gn Code (s) Computer

Number (s) Device Description

Probe Pad

Numbers

5

5

5

6

6

6

6

6

6

6

7

7

7

7

8

8

8

8

EA-3 65 , 66 Electrical alignment test structure

pol ys i 1 i con-to-meta

1

1, 2, 3, 4,

16, 17, 18, 19,

520

EA-4 65, 66 Electrical alignment test structure source/dra i n- to- metal

6, 7, 8, 9,

11, 12, 13, 14,

10

15

C-3IR 53 Capaci tor metal-gate oxi de- i mpl ant

61 Level designators

DGP-M 85 MOSFET profiler

metal gate over implant

1, 2 19, 20

DGP-P 86 MOSFET profiler

polysilicon gate over implant

3, 4 17, 18

C-3P 53 Capaci tor polysilicon-gate oxide-substrate

5, 6 15, 16

SIS-1 52 Step Coverage and Isolation Structure 7, 8 13, 14

SIS-2 52 Step Coverage and Isolation Structure 9, 10

11, 12

P-71 ' 79 "Practical" MOSFET profiler

metal gate over implant (no regrowth)

GD-9M

(A-1M)

19, 1 Gated-diode electrometer

Cross shaped gated diode (guarded)

metal gate

1, 2, 3, 4 18, 19, 20

G 5 Ground 17, 14

C-3PF 53 Capaci tor polysi 1 icon-field oxi de- substrate

5, 6 15, 16

gd-8m

(A-1M)

18, 1 Gated-diode electrometer

Inverted large rectangular gated diode

(guarded)

metal gate

7, 8, 9, 10

11, 12, 13

gd-4m

(A-1M)

14, 1 Gated-diode electrometer

Large rectangular gated diode (guarded)

metal gate

1,2,3

17, 18, 19, 20

G 5 Ground 4, 7

C-3PIR 53 Capaci tor polysilicon-gate oxide-implant

5, 6 15, 16

GD-5M

(A-1M)

15, 1 Gated-diode electrometer

Small rectangular gated diode (guarded)

metal gate

8, 9, 10

11, 12, 13, 14

26
Table 2, Part III. Test Structures Contained in Quadrant C. 1

Column

Number

Design

Code(s)

Computer

Number (s) Device Description

Probe Pad

Numbers

1 GD-1PF

(A- IP)

11, 1 Gated-diode electrometer

Large rectangular gated diode

polysilicon gate (no channel stop)

1, 2, 3 18, 19, 20

1 P-1 70 MOSFET profiler

metal gate (W=240, L=32)

*, 5 16, 17

1 P-2SP 78 MOSFET profiler

sealed polysilicon gate (W=240, L=24)

6, 7 14, 15

1 GD- IMF

(A-1M)

11, * Gated-diode electrometer

Large rectangular gated diode

metal gate (no channel stop)

8, 9, 10

11, 12, 13

2 GD-3PF

(A-1P)

13, I Gated-diode electrometer

Small rectangular gated diode (probeable)

polysilicon gate (no channel stop)

1, 2, 3 18, 19, 20

2 P-2 71 MOSFET profiler

metal gate (W=240, L=24)

*, 5 16, 17

2 P-2S 77 MOSFET profiler

sealed metal gate (W=240, L=24)

6, 7 14, 15

2 GD-3MF

(A-1M)

13, 1 Gated-diode electrometer

Small rectangular gated diode (probeable)

metal gate (no channel stop)

8, 9, 10 11, 12, 13

3 GD-6PF

(A- IP)

16, I Gated-diode electometer

Small rectangular gated diode

polysilicon gate (no channel stop)

1, 2, 3 18, 19, 20

3 P-3 72 MOSFET profiler

metal gate (W=240, L=16)

4, 5 16, 17

3 P-3M 81 MOSFET profiler

metallized source/drain metal gate

(W=240 , L= 16)

6, 7 14, 15

3 GD-6MF

(A-1M)

16, 1 Gated-diode electrometer

Small rectangular gated diode

metal gate (no channel stop)

8, 9, 10 11, 12, 13

4 GD-2PF

(A- IP)

12, 1 Gated-diode electrometer

Cross shaped gated diode

polysilicon gate (no channel stop)

1, 2, 3 18, 19, 20

4 P-4 73 MOSFET profiler

metal gate (W=240, L=8)

*», 5 16, 17

4 PR-2 92 Circular MOSFET profiler

metal gate (L=24)

6, 7 14, 15

4 GD-2MF

(A-1M)

12, 1 Gated-diode electrometer

Cross shaped gated diode

metal gate (no channel stop)

8, 9, 10

11, 12, 13

5 GD-10PF

(A- IP) 20, 1 Gated-diode electrometer

Round gated diode

polysilicon gate (no channel stop)

1, 2, 3 18, 19, 20

5 P-5V 74 MOSFET profiler

metal gate (W=120, L=24)

4, 5 16, 17

27
Column

Number

Des i gn Code (s) Computer

Number (s) Device Description

Probe Pad

Numbers

5 PR-1 91 Circular MOSFET profiler

polysilicon gate (L=2A)

6, 7 1A, 15

5 GD-10MF

(A-1M)

20, 1 Gated-diode electrometer

Round gated diode

metal gate (no channel stop)

8, 9, 10

11, 12, 13

6 GP-7PF

(A-1P)

17, 1 Gated-diode electrometer

Inverted large rectangular gated diode

polysilicon gate (no channel stop)

1, 2, 3 18, 19, 20

6 P-6 75 MOSFET profiler

metal gate (W=A8, L=2A)

A, 5 16, 17

6 P-2SA 81 MOSFET profiler

self-aligned polysilicon gate (L=2A)

6, 7 1A, 15

6 GD-7MF

(A-1M)

17, 1 Gated-diode electrometer

Inverted large rectangular gated diode

metal gate (no channel stop)

8, 9, 10 11, 12, 13

7 GD-1 1PF

(A-1P)

21, 1 Gated-diode electrometer

Inverted small rectangular gated diode

polysilicon gate (no channel stop)

1, 2, 3 18, 19, 20

7 P-7 79 "Practical" MOSFET profiler

metal gate (W=20, L=8)

A, 5 16, 17

7 P-21 71 MOSFET profiler

metal gate over implant (no regrowth)

6, 7 1A, 15

7 GD-1 IMF (A-1M)

21, 1 Gated-diode electrometer

Inverted small rectangular gated diode

metal gate (no channel stop)

8, 9, 10 11, 12, 13

8 GD-1PF

(A-2P)

11, 3 Gated-diode electrometer

Large rectangular gated diode

polysilicon gate (no channel stop)

1, 2, 3 18, 19, 20

8 . P-8S 76 MOSFET profiler

sealed metal gate (W=A0, L=l60)

**, 5 16, 17

8 P-2SI 77 MOSFET profiler

sealed metal gate over implant

(W=236, L=2A)

6, 7 1A, 15

8 GD- IMF (A-2M)

11, 3 Gated-diode electrometer

Large rectangular gated diode

metal gate (no channel stop)

8, 9, 10 11, 12, 13

28
Table 2, Part IV. Test Structures Contained In Quadrant D.

Column

Number

Des l gn Code (s) Computer

Number (s) Device Description

Probe Pad

Numbers

1 GD-ISA

(A- ISA)

22, 2 Gated-diode electrometer

Self-aligned large rectangular gated diode

1, 2, 3 18, 19, 20

1 R 83 Surface channel cross sheet resistor b,5

16, 17

1 R-l 83 Surface channel cross sheet resistor

implant (no regrowth)

6, 7 14, 15

l GD-ISA

(A- ISA)

22, 2 Gated-diode electrometer

Self-aligned large rectangular gated

diode

8, 9, 10 11, 12, 13

2 GD-ISA

(A- ISA)

22, 1 Gated-diode electrometer

Self-aligned large rectangular gated diode

1, 2, 3 18, 19, 20

2 R-F 83 Surface channel cross sheet resistor

(no channel stop)

4, 5 16, 17

2 R-IR 83 Surface channel cross sheet resistor

i mpl ant

6, 7 14, 15

2 GD-2SA

(A-1SA)

23, 2 Gated-diode electrometer

Self-aligned cross shaped gated diode

8, 9, 10

11, 12, 13

3 GD-3SA

(A- ISA)

2b, 2 Gated-diode electrometer

Self-aligned small rectangular gated

diode (probeable)

1, 2, 3 18, 19, 20

3 P-2F 71 MOSFET profiler

Metal gate over field oxide (W=240, L=24)

4, 5 16, 17

3 P-2 1 R 71 MOSFET profiler

Metal gate over implant (W=240, L=24)

6, 7 14, 15

3 GD-3SA

(A- ISA)

2b, 2 Gated-diode electrometer

Self-aligned small rectangular gated

diode (probeable)

8, 9, 10

11, 12, 13

4 GD-6SA

(A- ISA)

25, 2 Gated-diode electrometer

Self-aligned small rectangular gated diode

1, 2, 3 18, 19, 20

4 P-2SF 77 MOSFET profiler

Sealed metal gate over field oxide

(W=240, L=24)

4, 5 16, 17

4 P-2SIR 77 MOSFET profiler

Sealed metal gate over implant (W=240,

L=24)

6, 7 14, 15

b GD-6SA

(A- ISA)

25, 2 Gated-diode electrometer

Self-aligned small rectangular gated diode

8, 9, 10

11, 12, 13

5 GD-7SA

(A- ISA)

26, 2 Gated-diode electrometer

Self-aligned inverted large rectangular

gated diode

1, 2, 3 18, 19, 20

5 PR-2F 92 MOSFET profiler

Metal gate over field oxide (L=2A)

4, 5 16, 17

5 PR-2 1

92 MOSFET prof i ler Metal gate over implant (L=24)

6, 7 14, 15

29
Column

Number

Des i gn Code (s) Computer

Number (s) Device Description

Probe Pad

Numbers

5 GD-7SA

(A- ISA)

26, 2 Gated-diode electrometer

Self-aligned inverted large rectangular

gated diode

8, 9, 10 11, 12, 13

6 GD-1 ISA

(A- ISA)

27, 2 Gated-diode electrometer

Self-aligned small rectangular gated diode

1,2,3

18, 19, 20

6 P-2SPF 76 MOSFET profiler

Sealed polysilicon gate over field oxide

(W=240, 1=24)

4, 5 16, 17

6 P-2SPIR 76 MOSFET profiler

Sealed polysilicon gate over implant

(W=236, L=24)

6, 7 14, 15

6 GD-1 ISA

(A- ISA)

27, 2 Gated-diode electrometer

Self-aligned small rectangular gated diode

8, 9, 10 11, 12, 13

7 GD-2SA

(A- ISA)

23, 2 Gated-diode electrometer

Self-aligned cross-shaped gated diode

1, 2, 3 18, 19, 2

7 P-8SF 91 MOSFET profiler

Sealed metal gate over field oxide

(W=40, L=1 60)

4, 5 16, 17

7 P-8SIR 91 MOSFET profiler

Sealed metal gate over implant (W=40,

L=1 60)

6, 7 14, 15

7 GD-1 OP (A-2P)

20, 3 Gated-diode electrometer

Round gated diode polysilicon gate

8, 9, 10

11, 12, 13

8 GD-7P

(A-2P)

17, 3 Gated-diode electrometer

Inverted large rectangular gated diode

polysi 1 icon gate

1, 2, 3 18, 19, 20

8 PR- IF 92 MOSFET prof i 1 er polysilicon gate over field oxide (L=24)

5 16, 17

8 PR-1 IR 92 MOSFET profiler

polysilicon gate over implant (L=24)

6, 7 14, 15

8 GD-6P

(A-2P)

16, 2 Gated-diode electrometer

Small rectangular gated diode

polys i 1 i con gate

8, 9, 10

11, 12, 13

30
Table 2, Part V. Gated Diode Geometrical Design Specifications.

Des i gn Code (GD#)Gated Diode

Description

Junction

Area3 (cm2

)

Gate Area b (cm2

)

Junction

Peri meterc

(cm)

Junction

Per imeter/Area^

(cm

-1

)

1 Large rectangle 4.88xl0" 4 2. 19x1 0" 4 8.72xl0" 2 180

2 Cross shape 2 . 08x1

-

2 . 1 9x1 0” 4 8.82xl0“ 2 420

3 Smal 1 rectangle 2.44x1

0" 4

1 .57x1

0" 4 7 . 00x1

0" 2 290

i* Large rectangle

(guarded)

4.88xl0“ 4

1 .38x1

0“ 4 8. 56x10" 2 180

5 Small rectangle

(guarded)

2.44xl0" 41 .53x1

0" 4

7 . 00x1

0“ 2 290

6 Small rectangle 2.44xl0' 41 . 53x1

-4

7 . 00x1

0" 2 290

7 Inverted large

rectangle

1 .52x1 O' 4 3.97xl0-48 . 00x1

0” 2 530

8 Inverted large

rectangle (guarded)

1 .52xl0-4 3.97xl0" 4 8 . 00x1

0“ 2 530

9 Cross shape

(guarded)

2. 08x1

0" 4

1 . 39x1

-4 8.82xl0“ 2 420

10 Round -4.23x1

0" 4 = 1 . 83x1

-4 -7.42x1

0“ 2 = 180

1

Inverted small

rectangle

8.93x1

0“ 5 2. 06x1

0~ 4 5.06xl0“ 4 630

ISA Sel f-a 1

i gned

large rectangle

4.67xl0" 4 2 .61x1

0~ 4 8 .62x10“ 2 180

2SA Sel f-al i gned cross shape

1 .88xl0“ 4 2.39xl0“ 4 8.70x10" 2 460

3SA Sel f-al i gned

smal 1 rectangle

2.28x1

0“ 4

1 .87x1

-4

6. lOxlO -2 270

6SA Sel f-al i gned

smal 1 rectangle

2.28xl0" 41 .82x1

0" 4 6.06xl0“ 2 270

7SA Self-aligned inverted

large rectangle

1 .43xl0" 4 4 . 1 4x1

-4

8. I6xl0“ 2 570

1 ISA Self-aligned inverted

smal 1 rectangle

7.64x1

0“ 5 2 . 06x1

0" 4 5. 76x1

0“ 2 750

127 Test Pattern NBS-12

cross-shaped gateddiode electrometer

1 .36x10" 4 6. 36x10“ 5 6.08xl0“ 2 * 450

NOTES a The junction area is the total design area of the diode junction.

b The gate area is the area of the gate not including regions where the gate overlaps

the junction, the channel stop (if present), or field oxide,

c The junction perimeter is only the length of the boundary of the diode junction

beneath or adjacent to the gate.

d The junction perimeter/area is the ratio of the junction perimeter3 to the junction area. b

* Approximately 25% of the junction outer boundary of this structure is ungated.

31
QUADRANT A QUADRANT B

[)fpS°StNl

11111111 TTI .1 1 i I i : I I 1 1 1 I I I 1 1 1 1 J

h

H

-J

_ I

„’i no SR .00 si 00 1*02.00 HO. 00 lie. 00 7&1.00 7>0.00 it? .00 204.00 221.00 QUADRANT C QUADRANT D

04-00 4^3 *00 s’, 0.00

Figure 6. Outline drawing of test pattern NBS-24. The pattern is divided into

four quadrants. Each quadrant is divided into eight columns of test structures.

Certain columns have additional test structures above and/or below, thus lengthening the basic 2-by-10 probe-pad array.

32
QUADRANT A

GD 6M GD 2M GD JlOM JGD 7M GO UN GD 1M

Figure 7. Outline drawing of quadrant A of NBS-24. The design code of each

test structure is located on the upper probe pad(s) of the structure.

33
QUADRANT 8

Figure 8. Outline drawing of quadrant B of NBS-24. The design code of each

test structure is located on the upper probe pad(s) of the structure.

34
QUADRANT C

Figure 9. Outline drawing of quadrant C of NBS-24. The design code of each

test structure is located on the upper probe pad(s) of the structure.

35
QUADRANT D

Figure 10. Outline drawing of quadrant D of NBS-24. The design code of each

test structure is located on the upper probe pad(s) of the structure.

36
NBS-1 UA (rev. 2 -ec) 3. Publication Date May 1981

U.S. DEPT. OF COMM.

BIBLIOGRAPHIC DATA

SHEET (See Instructions)

1. PUBLICATION OR

REPORT NO.

NBSIR 81-2234

2. Performing Organ. Report No.

4. TITLE AND SUBTITLE

Microelectronic Test Patterns NBS—12 and NBS-24

5. AUTHOR(S)

G. P. Carver, R. L. Mattis, and M. G. Buehler

6. PERFORMING ORGANIZATION (If joint or other than NBS. see instructions)

NATIONAL bureau of standards

DEPARTMENT OF COMMERCE

WASHINGTON. D.C. 20234

7. Contract/Grant No.

S. Type of Report & Period Covered

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street, City. State, ZIP)

10. SUPPLEMENTARY NOTES

PP Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bi bliography or literature survey, mention it here)

Microelectronic test patterns NBS-12 and NBS-24 are modular developmental patterns

for experimentally evaluating improved designs of certain test structures. NBS-12

addresses geometric design considerations for the cross-bridge sheet resistor test

structure. NBS-24 contains a variety of preliminary designs for the integrated

gated-diode electrometer and a series of variations on the design of the MOSFET dc

profiler. Both patterns also include assorted process parameter test structures.

Tables of design parameters, functional descriptions of the test structures in each

pattern, and computer-composed outline drawings showing all of the test structures

are included.

12. KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolon s) Cross-bridge sheet resistor; integrated gated-diode electrometer; microelectronic

test pattern; microelectronic test structure; MOSFET dc profiler.

13. AVAILABILITY

[}£] Unlimited

| | For Official Distribution. Do Not Release to NTIS

P~1 Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C.

20402.

Order From National Technical Information Service (NTIS), Springfield, VA. 22161

14. NO. OF

PRINTED PAGES

39

15. Price

USCOMM-DC 6043-P80
.

'