NBSIR 87-3600

Center for Electronics and

Electrical Engineering

Technical

Publication

Announcements

Covering Center Programs,

July to September 1986,

with 1987 CEEE Events Calendar

July 1987

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899
INTRODUCTION TO THE CEEE TECHNICAL PUBLICATION ANNOUNCEMENTS

This is the tenth issue of a quarterly publication providing information on the technical work of the National Bureau of Standards Center for Electronics and Electrical

Engineering. This issue of the CEEE Technical Publication Announcements covers the

third quarter of calendar year 1 986.

Organization of Bulletin ; This issue contains citations and abstracts for Center

papers published in the quarter. Entries are arranged by technical topic as identified in the table of contents and alphabetically by first author within each topic.

Following each abstract is the name and telephone number of the individual to contact

for more information on the topic (usually the first author). This issue also includes a calendar of Center conferences and workshops planned for calendar year 1987,

some preliminary events for 1988, and a list of sponsors of the work.

Center for Electronics and Electrical Engineering ; Center programs provide national

reference standards, measurement methods, supporting theory and data, and traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U.S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor Technology Program, carried out by the Semiconductor Electronics Division in Gaithersburg, MD, and the Signals and Systems Metrology Program, carried out by the Electrosystems Division in Gaithersburg and the Electromagnetic Fields and Electromagnetic

Technology Divisions in Boulder, CO. See the table of contents on the opposite page

for identification of the topics covered by each program, as represented in this

issue. Key contacts in the Center are given on the back cover; readers are encouraged to contact any of these individuals for further information.

Center sponsors : The Center Programs are sponsored by the National Bureau of Standards and a number of other organizations, in both the Federal and private sectors;

these are identified on page 15.

Note on Publication Lists : Guides to earlier as well as recent work are the publication lists covering the work of each division. These lists are revised and reissued

on an approximately annual basis and are available from the originating division.

The current set is identified in the Additional Information section, page 11.
CEEE Technical Publication Announcements - July 1987 Page 1

TABLE OF CONTENTS

INTRODUCTION . inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM

Analysis Techniques ... 2

Dimensional Metrology 2

Integrated Circuit Test Structures ..•••• 2

Device Physics and Modeling ......... 3

Insulators and Interfaces ....... 4

Other Semiconductor Topics 5

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION . 4

Cryoelectronic Metrology • 5

Noise Metrology <>•••. 6

Optical Fiber Metrology .. 6

Electro-Optic Metrology . . 6

Other Fast Signal Topics 7

ELECTRICAL SYSTEMS 7

Power Systems Metrology 7

Pulse Power Metrology ........ 8

Superconductors 8

Magnetic Materials and Measurements .............. 9

ELECTROMAGNETIC INTERFERENCE ' 9

Radiated Electromagnetic Interference . 9

ADDITIONAL INFORMATION 11 1987 CEEE CALENDAR 12

SPONSOR LIST 15

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 2 CEEE Technical Publication Announcements - July 87

SEMICONDUCTOR TECHNOLOGY

Analysis Techniques

Bullis, W .M. , Watanabe, M., Baghdadi,

A., Yue-zhen, L. , Scace, R.I., Series,

R.W., and Stallhofer, P. , Calibration

of Infrared Absorption Measurements of

Interstitial Oxygen Concentration in

Silicon, Proceedings of the Silicon

Symposium, Boston, Massachusetts, May

4-9, 1986, p. 196.

Many calibration factors for infrared

absorption measurements of oxygen in

silicon have been reported in the literature and adopted as standard during the

past three decades. Reasons for this

variability are examined and a new

international experiment to establish a universally acceptable value and the

reliability to which it can be found are

described.

[Contact: Aslan Baghdadi, (301) 975-

2062]

Wachnik, R.A., The Use of Charge Pumping to Characterize Generation by Interface Traps, IEEE Transactions on Electron Devices, Vol. ED-33, No. 7,

pp. 1054-1061 (July 1986).

A small rectangular pulse technique for

measuring the charge pumping current has

been proposed as a method to characterize interface traps near mid-gap. It is

shown theoretically and experimentally

that the small rectangular pulse technique can be used to predict the surface

generation current measured on a metal

oxide-semiconductor field-effect transistor or a gated diode. This new technique has the advantage that the measured current is at least 10 to 100

times larger than the surface generation

current.

[Contact: Gary P. Carver, (301) 975-

2091 ] Dimensional Metrology

Postek, M.T., Electron Detection Modes

and Their Relation to Linewidth Measurement in the Scanning Electron Miand Their Relation to Linewidth Measurement in the Scanning Electron Microscope, Proceedings of the 44th

Annual Meeting of the Electron Microscopy Society of America, Albuquerque,

New Mexico, August 10-15, 1986, pp.

646-649.

The basic premise underlying the use of

the scanning electron microscope for

linewidth measurement for semiconductor

research and production applications is

that the video image acquired, displayed, and ultimately measured reflects

accurately the structure of interest.

This paper demonstrates that depending

upon the mode of electron detection

(secondary, backscattered, or converted

backscattered secondary electrons) and

accelerating voltage used to image and

measure the structure of interest, a variety of results can be obtained. The

reasons for these differences are discussed relative to the coupling of this

type of work with electron beam/sample

interaction modeling to enable the ac- quisition of more precise linewidth

measurements.

[Contact: Michael T. Postek, (301)

975-2299]

Integrated Circuit Test Structures

Cresswell, M.W., Pessall, N., Linholm,

L.W., and Radack, D.J. , The Use of

Artificial Intelligence and Microelectronic Test Structures for Evaluation

and Yield Enhancement of Microelectronic Interconnect Systems, Proceedings

of the Third International IEEE Conference on VLSI Multilevel Interconnection, Santa Clara, California, JUne

9-1 1, 1986, pp. 331-340.

A major factor limiting the production

and performance of high-density VLSI

integrated circuits is the fabrication

of reliable interconnect systems. Properly designed microelectronic test

structures and appropriate test methods

can be used to characterize the processes used to fabricate these systems.

However, the computer-controlled testing

of comprehensive process evaluation and
CEEE Technical Publication Announcements - July 87 Page 3

IC Test Structures (cont'd.)

of comprehensive process evaluation and

diagnosis structures often results in

large quantities of data which cannot be

readily or effectively interpreted by

the user. As a result, important features of the data are often overlooked

or not considered in the evaluation of

the fabrication processes. This paper

describes an expert system for assisting

the user to interpret test results associated with fabricating selected aspects

of VLSI interconnect systems.

[Contact: Loren W. Linholm, (301)

975-2052]

Device Physics and Modeling

Bennett, H.S., Band Structure and

Density of States Changes in Heavily

Doped Silicon, Journal of Applied

Physics, Vol. 59, No. 8, pp. 2837-2844

(April 15, 1986).

The Klauder self-energy method is applied to calculating the effects of

one-body interactions among the dopant

ions and the carriers in heavily doped

silicon at 300 K. Many-body interactions of exchange energy for majority

carriers and of correlation energy for

minority carriers are estimated by interpretation of optical absorption measurements and by calculations based on

degenerate theory. When densities ex- ceed 5 x 10 19 cm-3

, one-body and manybody terms become of the same order of

magnitude and should be included in

calculations of band- structure changes

and of properties such as carrier transport which depend on the density of

s tates.

[Contact: Herbert S. Bennett, (301)

975-2079]

Bennett, H.S., Device Physics for

Modeling GaAs Bipolar Transistors

,

Proceedings of the Semiconductor

Research Corporation Conference on

Bipolar Technology, Tempe, Arizona,

April 24-25, 1986, S. A. Abbas, Ed.,

Paper 11.17.

The accuracy and reliability of predictions from numerical simulations of

advanced bipolar transistors depend on model input parameters. These parameters include the variations with doping

and carrier concentrations in both

n-type and p-type material of 1 ) the

valence and conduction band edges, 2)

the effective intrinsic carrier concentrations, 3) the minority carrier mobilities, and 4) the minority carrier lifetimes. This paper contains a summary of

recent advances in device physics for

modeling silicon bipolar transistors

with submicrometer dimensions and high

concentrations of dopant ions and car- riers. It also contains preliminary

results in device physics for modeling

those regions of GaAs bipolar transistors which have high concentrations of

either dopant ions or carriers. The

latter results are based on lessons

learned from modeling advanced silicon

bipolar devices.

[Contact: Herbert S. Bennett, (301)

975-2079]

Bennett, H.S., Gaitan, M., Roitman, P.

,

Russell, T.J. , and Suehle, J.S.,

Modeling MOS Capacitors to Extract

Si-Si02 Interface Trap Densities in the

Presence of Arbitrary Silicon Doping

Profiles, IEEE Transactions on Electron Devices, Vol. ED- 3 3, No. 6, pp.

759-765 (June 1986).

The MOS capacitor model in SEDAN has

been modified to include the effects of

an energy-dependent Si-Si0 2 interface

trap density and arbitrary silicon substrate doping profiles. These modifications have been used to calculate the

quasi-static C-V characteristics of MOS

capacitors and to compare them with

those measured by the Kuhn technique for

as-received and for gamma-irradiated

p-well and n-type silicon MOS capacitors. The average substrate doping is

obtained from high-frequency C-V curves.

For the n-type substrate, the dopant

redistribution was estimated with SUPREM

II. Experimental and theoretical C-V

curves were made to agree by varying the

voltage offset due to fixed oxide charge

and both the magnitude and the energy
Page 4 CEEE Technical Publication Announcements - July 87

Device Physics & Modeling (cont'd.)

distribution of interface trapped

charge. The distributions of interface

traps which gave the best fits between

experiment and theory have peaks near

mid gap for the p-well and n-type silicon MOS capacitors.

[Contacts Herbert S. Bennett, (301)

975-2079]

Berning, D.W., and Blackburn, D.L.

,

Power MOSFET Failure During Turn-Off:

The Effect of Forward Biasing the

Drain-Source Diode, Conference Proceedings of the 1986 IEEE Industrial

Applications Society Annual Meeting,

Denver, Colorado, September 25-October

3, 1986, pp. 335-339.

The effects on the turn-off failure of

power metal oxide-semiconductor fieldeffect transistors (MOSFETs ) which re- sult from forward biasing the intrinsic

drain-source diode immediately prior to

turn-off are discussed. A nondestructive test circuit is used to measure the

turn-off characteristics of individual

devices under a variety of conditions.

It is shown that the drain voltage at

which the device fails decreases as either the diode forward current or the

reverse recovery current is increased.

If the diode is forward biased, the

voltage at failure can be less than

one-half of the voltage at which the

device fails if the diode has not been

forward biased (and often less than

one-half the manufacturer-rated voltage

capability for the device) • Also, if

turn-off of the MOSFET is attempted with

the diode conducting, the device loses

its fast turn-off capability due to

charge storage effects. A parallel

resonant power converter circuit is

employed to demonstrate how the intrinsic drain-source diode may and may not

be used safely in practical applications.

[Contacts David W. Berning, (301)

975-2069]

Insulators and In terfaces

Chandler-Horowitz, D.

,

Novotny, D.B., Vorburger, T., and

Giauque, G.H., Film Thickness and

Refractive Index Standard Reference

Material Calibrated by Ellipsometry and

Profiloaetry , Proc. SPIE - The International Society for Optical Engineering, Vol. 661, pp. 402-407, SPIE, P.0.

Box 20, Bellingham, WA 98227 (1 986)

[conference Quebec, Canada, June 2-6,

1986].

A Standard Reference Material ( SRM) has

been designed and fabricated, and will

be calibrated for thickness and refractive index using a highly accurate ellipsometer. The SRM consists of a three-inch diameter silicon wafer with a silicon dioxide film of uniform thickness. The design and preparation of the

SRM is discussed and the ellipsometric

measurement results and their comparisons with stylus profilometry are presented, along with an analysis of the

precision of the measurements. The

ellipsometric accuracy depends upon the

wafer oxide film, the model that represents the film-interface-substrate system, and the methods used to make the

measurements. Use of both correct sam- ple preparation and correct model is

important in order to obtain high accuracy for comparisons of optical thickness as determined by the ellipsometer

and mechanical thickness as determined

by the stylus profHometer. This SRM

will be available initially in three

nominal oxide film thicknesses of 50,

100, and 200 nm. The SRM can be used to

calibrate many different optical and

mechanical thickness monitoring instruments as well as the ellipsometer for

which it was specifically designed.

[Contact: George A. Candela, (301

)

975-2086]

Mazer, J. A., and Ehrstein, J.R., Effect: of Sintering on the Sheet Resistance Directly Under an Aluminum/Silicon Ohmic Contact, Extended Abstracts

of the Electrochemical Society 169th

Meeting, Boston, Massachusetts, May

4-9, 1986, pp. 396-397.

Candela, G.A., Van der Pauw-type measurements with a
CEEE Technical Publication Announcements - July 87 Page 5

Insulators & Interfaces (cont'd.)

specially designed test structure and

spreading resistance measurements indicate that the sheet resistance directly

under a sintered 1% Si-Al/Si ohmic contact is lower than the sheet resistance

of the diffused layer away from the

contact. These results agree with

transmission-line calculations made with

measurements from six- terminal Kelvin

test structures, and allow an improved

calculation of the circuit-loading (or

front-contact) resistance.

[Contact: James R. Ehrstein, (301)

975-2060]

Mountain, D. J. , Russell, T.J. , and Galloway, K. F., Effect of Post-Oxidation

Anneal on Electrical Characterization

of Thin Oxides, Extended Abstracts of

the Electrochemical Society 169th

Meeting, Boston, Massachusetts, May

4-9, 1986, pp. 382-383.

The effect of pre- and post-oxidation

treatments on thin oxide electrical

characteristics was examined. Pre-oxidation clean and post-oxidation anneal

(POA) times and ambients were varied.

Three POA times and two gases (argon and

nitrogen) were compared. Flatband voltages, oxide breakdown fields, and interface trap densities were measured for

thin (20-nm) oxides. Interface trap

densities were measured using the

charge-pumping technique. Data indicate

an optimum process can be designed. A

sacrificial oxidation cleaning sequence

and a long (1 20-min) POA in nitrogen

gave the oxide with the best electrical

characteristics.

[Contact: Thomas J. Russell, (301) 975-

2073]

Other Semiconductor Topics

Dodge, M., Refractive Index, CRC

handbook of Laser Science and Technology, Vol. IV, Optical Materials: Part

2, M. J. Weber, Ed. (CRC Press, Boca

Raton, Florida, 1986), pp. 21-47.

This section defines refractive index.

gives the general form of the Cauchy,

Sellmeier, and Hertzberger dispersion

equations, and discusses the environmental factors that must be considered in

the determination and use of refractive

index values for a particular material.

Tables are included that give the re- fractive index and the temperature coefficient of refractive index for crystals

that are of particular interest for the

fabrication of optical components to be

used in laser systems.

Dispersion equations and equation parameters are also given for some of the

materials.

[Contact: Marilyn Dodge, (301 ) 975-2386]

Ma, Y. , Stern, E.A., and Bouldin, C.E.,

The Structural Unit in Icosahedral

MnAlSi and MnAl, Physics Review

Letters, Vol. 57, No. 13, pp. 1611-1614

(Sept. 29, 1986).

Extended x-ray-absorption fine-structure

measurements were made on icosahedral

MnAl and MnSiAl, and on the periodic

standards a-phase of MnSiAl and orthorhombic phase of MnAl^. Experimental

evidence is presented that a cage of Mn

atoms at the vertices of an icosahedron

is the structural unit in the icosahedral MnSiAl and MnAl phases. The connections among these icosahedral units and

between them and the A1 atoms are different in the icosahedral phases and in

the a-phase. As in the a-phase, the Mn

icosahedra do not share vertices in the

icosahedral phases; i.e., they are

separated from one another. It is suggested that the i-phase grows by randomly nucleating together Mn icosahedra

along their 20 threefold directions, as allowed by local steric constraints.

[Contact: Charles E. Bouldin, (301

)

975-2046]

FAST SIGNAL ACQUISITION, PROCESSING, &

TRANSMISSION

Cryoelectronic Metrology

Hamilton, C.A., Kautz, R.L. , and Lloyd,
Page 6 CEEE Technical Publication Announcements - July 87

Cryoelectronic Metrology (cont'd.)

F.L., The NBS Josephson Array voltage

Standard, CP EM 86 Digest, 1986 Conference on Precision Electromagnetic

Measurements, Gaithersburg, Maryland,

June 23-27, 1 986, pp. 108-109.

It has been realized for many years that

the accuracy of Josephson voltage standards can be substantially improved by

using many junctions in series to generate a large voltage. A simple series

extension of the single junction standard requires individual control of the

bias current, for example, for each

junction of 100 mV using 20 junctions.

In 1977 Levinsen et al. suggested a method to avoid the multiple bias

problem by using constant-voltage steps

which cross the zero-current axis of the

plot of junction current as a function

of voltage (I-V curve). This allows a large array of junctions to share a common current bias at or near zero. With an array of 1000 or more junctions,

a quantized voltage of 1 V is possible.

After nearly ten years of effort, the

problems of fabrication, stability, and

radio- frequency energy distribution are

largely solved and Josephson standards

at the 1 —V level are a reality. This

paper reviews the design and operation

of series array voltage standards and

describes the efforts at NBS to engineer

a versatile, reliable, and easily used

voltage standard system.

[Contact: Clark A. Hamilton, (303)

497-3740]

Noise Metrology

Daywitt, W.C., 10-60 GHz G/T, Measurements Using the Sun as a Source — A

Preliminary Study, NBS IR 86-3046

(April 1 986) . Preliminary studies show that it may be

possible 1) to determine the solar flux

density incident on the earth's atmosphere using a simple algorithm with an

uncertainty less than 8 percent, 2) to

overcome a deteriorating accuracy in

atmospheric loss calculations by using a

"tipping curve" measurement, and 3) to

reduce starshape correction factor un- certainty by using an equivalent solar

diameter.

[Contact: William C. Daywitt, (303)

497-3720]

Optical Fiber Metrology

Day, G.W., and Etzel, S.M., Annealing

of Bend-Induced Birefringence in Fiber

Current Sensors, Technical Digest of

the 5th International Conference on

Integrated Optics and Optical Fiber

Communication, Venice, Italy, October

1-4, 1985, pp. 871-874.

The bend-induced linear birefringence in

coils of single-mode optical fiber has

been greatly reduced by annealing. This

should allow the construction of electric current sensors that are much more

compact and potentially more sensitive

than previously possible.

[Contact: Gordon W. Day, (303)

497-5204]

Yang, S., and Gallawa, R.L., A Comparison of Hires Bandwidth Measurement

Techniques for Multimode Optical

Fibers, IEEE Transactions on Instrumentation and Measurement, Vol. IM-35,

No. 2, pp. 187-194 (June 1986).

This paper presents the results of an experiment to compare three distinct

methods of measuring the bandwidth of a telecommunication-grade, multimode optical fiber. The three methods are: 1)

the time-domain method, 2) the frequency-domain method, and 3) the pulse spectrum analysis method. We find good

agreement between the frequency- domain

method and the pulse spectrum analysis

method, but the time-domain method

yields results that are lower than the

other two for the cases we considered.

[Contact: Robert L. Gallawa, (303)

497-3761]

Electro-Optic Metrology

Young, M., Low-Cost LCD Video Display

for Optical Processing, Applied Op-
CUE Technical Publication Announcements - July 87 Page 7

Electro-Optic Metrology (cont'd.)

tics, Vol. 25, No. 7, pp. 1024-1026

(April 1, 1986)

.

In this paper, I show that a liquid gate

and low-pass filter are needed to use a new LCD video monitor effectively in a coherent-processing system, and I demonstrate the results of some simple

spatial-f iltering experiments.

[Contact: Matt Young, (303) 497-3223,

-5342]

Other Fast Signal Topics

Cromar, M.W., Clark, A.F., and Fickett,

F.R., Flux Limit of Cosmic-Ray Magnetic Monopoles From a Multiply Discriminating Superconductive Detector, Physical Review Letters, Vol.

56, No. 24, pp. 2561-2563 (June 16,

1 986)

.

A multiply discriminating, three-loop

superconducting monopole detector was

operated for one year. During this

period, 8523 hours of data were accumulated. The sensing area averaged over

solid angle for trajectories passing

through a loop was 178 cm2

. Including

double coincidence events from trajectories passing through the shield but

not through a loop, the total sensing

area averaged over solid angle was 1195

cm2

. No candidate monopole events were

observed, leading to an upper limit on

the flux of cosmic ray magnetic monopoles of 5.0 x 10” 12 cm” 2 sr" 1 s” 1 with

a 90% confidence level.

[Contact: Michael W. Cromar, (3 03)

497-5375]

Duffield, C.L. , Moreland, J. , and

Fickett, F.R., Problems with Cryogenic Operation of Piezoelectric Bending Elements, Review of Scientific

Instruments, Vol. 57, pp. 990-992 (May

1 986)

.

Piezoelectric bimorphs constructed from

lead titanate-zirconate (PZT) ceramic

bonded to a brass sheet have been tested

at cryogenic temperatures to determine

their suitability for use in a lowtemperature micropositioner. Experimental data are presented on bimorph sensitivity (displacement per volt) as a function of the number of temperature

cycles. Results indicate that bimorphs

of this type cannot be calibrated

because of irreversible changes in the

bending characteristics that occur while

cycling from room temperature to 4 K.

[Contact: John Moreland, (3 03)

497-3641]

Young, M., Scratch-and-Dig Standard

Revisited, Applied Optics, Vol. 25,

No. 12, pp. 1922-1928 (June 15, 1986).

The scratch standard (MIL-0-1 3830A) is a cosmetic standard that is effected by a visual comparison with a set of secondary standards that are in turn evaluated by comparison with a set of master

standards. Both manufacture and certification of the secondary standards are

somewhat unreliable. This paper shows

that they can be classified according to

the relative power scattered at a relatively small angle and describes experiments with etched gratings that have the

appearance of scratches but diffract

light into a broad peak between 5 and 1

0

degrees off the axis of the incident

beam. Some prototypes have been classified both by comparison with the master

standards and by a photoelectric measurement; agreement between the two

methods is good. Such gratings, used as

the secondary standards, should display

less intersample variation than scribed

or other artifacts. The paper concludes

by presenting evidence that the original

primary standards have been stable over

a long time.

[Contact: Matt Young, (303) 497-3223,

-5342]

ELECTRICAL SYSTEMS

Power Systems Metrology

McKnight, R.H., Discussion of Paper 85

MM 115-1, "A Fast Response Impulse

Voltage Measuring System for Testing of

Gas Insulated Substations Equipment,
Page 8 CEEE Technical Publication Announcements - July 87

Power Systems Metrology (cont'd.)

IEEE Transactions on Power Delivery,

PWRD-1, No. 3, p. 47 (July 1986).

This is a discussion of a technical

paper presented at the winter meeting of

the Power Engineering Society, IEEE. It

questions some of the author's assumptions and references further applications of the measurement method described.

[Contact: Ronald H. McKnight, (301)

975-2431]

Pulse Power Metrology

McKnight, R.H., Fenimore, C., and

Lagnese, J. , The Use of Deconvolution

Methods in Characterizing Electrical

Sensors, Proceedings of the Fifth

IEEE Pulsed Power Conference, Crystal

City, Virginia, June 10-12, 1985

(published by Institute of Electrical

and Electronic Engineers, Inc. , 345

East 47th Street, New York, NY 10017,

May 1 986) , pp. 1 76-1 78.

Deconvolution methods have been applied

to measurements made with different

electrical sensors including resistive

and capacitive dividers. Deconvolved

and directly measured waveforms have

been compared with good results.

[Contact: Ronald H. McKnight, (301)

975-3431]

Superconductors

Dube, W.P., and Goodrich, L.F., Quench

Detector Circuit for Superconductor

Testing, Review of Scientific Instruments, Vol. 57, No. 4, pp. 680-682

(April 1986).

A quench detector is a device that interrupts the flow of current through a superconductor in the event the superconductor reverts to the normal, resistive state. This new design has adjustable filtering and sensitivity. The

input is well isolated from the output,

eliminating any possible ground loop

through the detector. It also has excellent noise immunity.

[Contact: Loren F. Goodrich, (303)

497-3143]

Fickett, F.R., Research on Practical

Superconductors at NBS, ATB Metallurgie, Vol. 25, No. 4 (Proceedings of

the Benelux Metallurgy Conference on Superconductors, Brussels, Belgium, May

8-9, 1985), pp. 265-271.

Hie National Bureau of Standards is

engaged in a number of research programs

which have as their goals the evaluation

of various properties of practical

superconductors related to their application in large-magnetic systems. The

ability to have standard data, standard

tests, and standard materials for evaluating the primary properties of superconductors and related measurement systems is essential if international com- merce in these complicated conductors is

to develop and grow. The NBS work has

concentrated on measurement of critical

current, critical field, ac losses, and

properties of the copper normally used

as a stabilizing material. Many parameters must be considered in these investigations. An overview of these re- search efforts and a selection of recent

results are presented. Particular em- phasis is given to work performed in

cooperation with the International Copper Research Association (INCRA) on

properties of oxygen-free copper.

[Contact: Frederick R. Fickett, (303)

497-3785]

Moreland, J. , Ekin, J.W., and Goodrich,

L.F., Electron Tunneling into Superconducting Filaments: Depth Profiling

the Energy Gap of NbTi Filaments in

High-Field Magnet Wires, Advances in

Cryogenic Engineering Materials, Vol.

32, R. P. Reed and A. F. Clark, Eds.

(Plenum Publishing Corporation, New

York, NY, 1986), pp. 1101-1108.

Squeezable electron tunneling (SET)

junctions consisting of superconducting

NbTi filaments (extracted from magnet

wires) and sputtered Nb thin-film counter electrodes were used to determine
CEEE Technical Publication Announcements - July 87 Page 9

Superconductors (cont'd.)

the energy gap at the surface of the

filaments. The current versus voltage

curves of junctions immersed in liquid

heliun at 4 K were measured for a series

of filaments taken from the same wire.

Each filament had been etched to remove

a surface layer of varying thickness so that the energy gap could be determined

as a function of depth into the surface

of an average filament. It was found

that some manufacturing processes yield

filaments having surface layers with

reduced energy gaps of 0.4 meV compared

to measured interior bulk values ranging

from 1.2 to 1.3 meV.

[Contact: John Moreland, (303)

497-3641]

Magnetic Materials and Measurements

Capobianco, T.E., Fickett, F.R., and

Moulder, J.C., Mapping of Eddy Current Probe Fields, Review of Progress

in Quantitative Nondestructive Evaluation, Vol. 5A, Chap. 3, Sec. A (Plenum

Publishing Corp., New York, NY), pp.

705-711.

The magnetic fields produced by four

different eddy current probes were

mapped in the near field with very small

(0.43-mm) diameter inductive magnetic

field sensors. The four eddy current

probes included two nominally identical,

absolute, air-core probes; an absolute

ferrite-core probe; a reflection probe

with an air-core excitation coil; and

two counterwound ferrite-core pickup

coils. Measured fields for the air-core

probes are compared with values calculated from the theory of Dodd and Deeds.

All measurements were performed at 10

kHz; for the ferrite core probe, the

field intensity was also measured from 1 kHz to 100 kHz using conventional

methods.

[Contact: Thomas E. Capobianco, (303)

497-3141]

Heinrich, B., Cochran, J. F., Myrtle, K. , Lonzarich, G. , and Goldfarb, R.B.,

Ferromagnetic Resonance at 9.55 and

23.9 GHz in the Weak Ferroaagnet

Ni

j

Al , Journal of Magnetism and

Magnetic Materials, Vol. 54-57, pp.

1011-1012 (1986).

Ferromagnetic resonance (FMR) at microwave frequencies of 9.55 and 23.895 GHz

has been measured in the archetypal weak

itinerant ferromagnet Ni „A1 in the temperature range from 4 to 60 K. The

observed FMR lines exhibited a strong

Dysonian asymmetry and were well described over the whole temperature range

by Maxwell' s equations that included

eddy currents, and by the LandauLifshitz (L-L) equation of motion including either Gilbert or L-L damping

terms. At 4 K, the best fits were obtained using slightly angular dependent

relaxation rates of 2.4 x 10 8 s- 1 for

saturation magnetization, MSf along

[111] and 2.0 x 10 8 s” 1 for Ms along

[100], and using a spectroscopic splitting factor g(Gilbert) = 2.2 ± 0.01 or

g(L-L) = 2.14 ± 0.01.

[Contact: Ronald B. Goldfarb, (303)

497-3650]

ELECTROMAGNETIC INTERFERENCE

Radiated Electromagnetic Interference

Crawford, M.L. , and Koepke, G.H., Design, Evaluation, and Use of a Reverberation Chamber for Performing Electromagnetic Susceptibility/Vulnerability Measurements, NBS Technical Note

1092 (April 1 986)

.

This report presents the results of work

at the National Bureau of Standards to

evaluate, document, develop (when necessary) and describe the methodology for

performing radiated susceptibility/ vulnerability measurements using a reverberation chamber. The report describes

the reverberation chamber theory of

operation, construction, evaluation,

functional operation, and use for performing immunity measurements. It includes an estimate of measurement uncertainties derived empirically from test

results and from comparisons with ane- choic chamber measurements. Finally, it
Page 1 CEEE Technical Publication Announcements - July 87

0

Radiated EMI (cont'd.)

discusses the limitations and advantages

of the measurement technique to assist

potential users in determining the applicability of this technique to their

electromagnetic compatibility measurement needs.

[Contact: Myron L. Crawford, (303)

497-5497]

Crawford, M.L., and Koepke, G.H.,

Electromagnetic Radiation Test Facilities - Evaluation of Reverberation

Chambers Located at NSWC, Dahlgren,

VA, NBSIR 86-3051 (June 1986).

This report describes measurement procedures and results obtained from evaluating the reverberation chamber facilities

located at the Naval Surface Weapons

Center, Dahlgren, Virginia. Two chambers were tested referred to as 1 ) the

half chamber, and 2) * the full chamber.

The facilities were developed by the

NSWC for use in measuring and ana- lyzing the electromagnetic susceptibility/vulnerability of weapon systems and

the shielding effectiveness of enclosures and shielding materials. A brief

description of each facility is given,

including the instrumentation used for

performing the evaluation and calibration of the facilities by the National

Bureau of Standards. Measurements

described include: 1) evaluation of the

voltage standing wave ratios of the

chamber's transmitting and receiving

antennas; 2) measurement of the chamber' s insertion loss or coupling

efficiency versus frequency; 3) measurement of the effectiveness of the chamber

tuners; 4) determination of the electric-field uniformity in the chamber's

test zones versus frequency; 5) determination of the absolute amplitude calibration of the test electric fields in

the chambers, based upon received power

measurements of the reference antenna

and calibrated dipole probe antenna

measurements; and 6) comparison of the

response of reference equipment under

test to test fields established inside

the NSWC reverberation chambers and the

NBS reverberation chamber. These

results can then be compared to anechoic

chamber results. Conclusions given

indicate that the NSWC chambers can be

used at frequencies down to approximately 150 MHz. Estimates are given of

the measurement uncertainties derived

empirically from the test results.

[Contact: Myron L. Crawford, (303)

497-5497]

Crawford, M.L., and Koepke, G.H., Performing EM Susceptibility/Vulnerability

Measurements Using a Reverberation

Chamber, EMC EXPO 86, International

Conference on Electromagnetic Compatibility, Washington, D.C., June 16-19,

1986, pp. T28.7-T28.1 3. This paper discusses the design, evaluation, and use of a reverberation chamber

for performing electromagnetic susceptibility (EMS) measurements of electronic

equipment. Included are brief descriptions of the test procedures, application advantages and limitations, some

EMS test results, intrepretation of test

results relative to free-space test

methods, and an estimate of measurement

uncertainties.

[Contact: Myron L. Crawford, (303)

497-5497]

Friday, D.S., Methodology for Statistical Control of the Anechoic Chamber

Field Generation System, NBSIR

85-3033 (January 1986).

The microwave anechoic chamber in question is an NBS laboratory facility in

which standard plane-wave electromagnetic fields are generated. This chamber enables specialized measurements and

electromagnetic interference/electromagnetic compatibility tests to be con- ducted on antennas and other devices.

This paper is concerned with methodology

for assuring that the standard field

patterns generated in the NBS and similar chambers are repeatable. Procedures

are proposed for developing a data base

from measurements obtained by placing

the system, which generates the fields,

in certain relevant reference configura-
CEEE Technical Publication Announcements - July 87 Page 1

Radiated EMI (cont'd.)

tions. Methodology is presented for

developing statistical control charts to

monitor both the location and the scale

parameters of these data over time.

[Contact: Dennis S. Friday, (303)

497-5395]

Hill, D.A., Out-of-Band Response of a

Coax- to-Wa veguide Adapter, IEEE

Transactions on Electromagnetic Compatibility, Vol. EMC- 28, No. 3, pp. 156-

158 (August 1986).

The input impedance and transmission

coefficients of a coax- to-waveguide

adapter are analyzed for out-of-band

frequencies. Numerical results are

shown for an S-band adapter for frequencies from 2 to 1 0 GHz. The above-band

response is frequency sensitive because

of the presence of higher-order propagating modes in the waveguide.

[Contact: David A. Hill, (303)

497-3472]

Hill, D.A., and Francis, M.H. , Out-ofBand Response of Antenna Arrays,

NBSIR 86-3047 (June 1986).

The response of antenna arrays to outof-band frequencies has been analyzed

using the effective aperture approach.

An average value of effective aperture

can be obtained by averaging out the

incidence angle and the polarization of

the incident field. Far-field patterns

have also been calculated by treating

the array element excitations as random

variables. The randomness in the element excitations causes a decrease in

directivity and an increase in sidelobe

level. Out-of-band measurements of

reflection coefficient and near-field

response have been made on two large

slotted-waveguide arrays for frequencies

from 2 to 1 8 GHz. Both arrays are nar- row band, attributable to the large

impedance mismatch at out-of-band frequencies . [Contact: David A. Hill, (303)

497-3472]

, M.T., Simple,

Approximate Expressions for HigherOrder Modes and Resonances in TEM

Cells, IEEE Transactions on Electromagnetic Compatibility, Vol. EMC-28,

No. 3, pp. 125-130 (August 1986).

Simple, approximate egressions for

determining the cutoff frequencies of

the first few higher-order modes and the

associated resonances in transverse

electromagnetic (TEM) cells are presented. Both symmetric and asymmetric

cells are discussed with examples.

[Contact: Perry F. Wilson, (303)

497-3842]

Wilson, P.F., and Ma, M.T., A Study of

Techniques for Measuring the Electromagnetic Shielding Effectiveness of

Materials, NBS Technical Note 1095

(May 1 986) • Shielding effectiveness relates to a material' s ability to reduce the transmission of propagating fields in order

elec tromagnetically to isolate one

region from another. Because a complex

material's shielding capability is difficult to predict, it often must be

measured. A number of measurement

approaches are studied including the use

of a shielded room, coaxial transmission

line holders, time-domain signals, the

dual transverse electromagnetic (TEM)

cell, and an apertured TEM cell in a reverberation chamber. In each case, we consider the system's frequency range,

test sample requirements, test field

types, dynamic range, time required,

analytical background, and present data

taken on a common set of materials.

[Contact: Perry F. Wilson, (303)

497-3842]

ADDITIONAL INFORMATION

Lists of Publications

Gibson, K. A., Page, J. M., and Miller,

C.K.S., A Bibliography of the NBS

Electromagnetic Fields Division Publications, NBSIR 85-3040 (February

1986)

.

Wilson P. F and Ma This bibliography lists publications of
Page 1

2

CEEE Technical Publication Announcements - July 87

Lists of Publications (cont'd.)

the National Bureau of Standards' Electromagnetic Fields Division for the

period from January 1 984 through September 1985, with selected earlier publications f rom the Division' s predecessor

organizations.

[Contact: Kathryn A. Gibson, (3 03)

497-3132]

Kline, K. E. , and DeWeese, M.E., Metrology for Electromagnetic Technology:

A Bibliography of NBS Publications

,

NBSIR 86-3048 (June 1986).

This bibliography lists the publications

of the personnel of the Electromagnetic

Technology Division of NBS in the period

from January 1970 through December 1985.

A few earlier references that are directly related to the present work of

the Division are included.

[Contact: Kathryn E. Kline, (3 03)

497-3678]

Pa 11a, J.C., and Meiselman, B., Electrical and Electronic Metrology: A

Bibliography of NBS Electrosystems

Division Publications, NBS List of

Publications 94 (January 1 987)

•

This bibliography covers publications of

the Electrosystems Division, Center for

Electronics and Electrical Engineering,

NBS, and of its predecessor sections for

the period January 1963 to January 1987.

A brief description of the Division's

technical program is given in the introduction.

[Contact: Jenny C. Palla, (301)

975-2220]

Walters, E.J. , Semiconductor Measurement Technology: A Bibliography of NBS

Publications for the Years 1962-1986,

NBSIR 87-3522 (February 1987).

This bibliography contains reports of

work performed at the National Bureau of

Standards in the field of Semiconductor

Measurement Technology in the period

from 1962 through December 1986. An

index by topic area and a list of

authors are provided.

[Contact: E. Jane Walters, (301

)

975-2050]

1987 CEEE CALENDAR

July 28-30 (Vail, CO)

Short Course on Optical Fiber Measure- ments. This course is sponsored by

the National Bureau of Standards and the

University of Colorado with the cooperation of members of industry who serve as faculty together with staff from the

Electromagnetic Technology and Electromagnetic Fields Divisions. The course

is intended for scientists and engineers

involved in optical fiber characterization and emphasizes concepts, techniques, and apparatus used in measuring

engineering parameters of telecommunications-grade fibers.

The following major topic areas are addressed: optics for communications, em- phasizing geometric optics concepts;

fiber properties and parameters; indexprofile measurements; fiber bandwidth

measurements in the frequency and time

domains; fiber attenuation measurements;

connector and splice losses; optical

time-domain reflectometry concepts and

applications; single-mode fibers; statistics and error analyses, measurement

uncertainties; and fibers for sensors.

[Contact: Office of Conference

Services, University of Colorado (303)

492-8630; Robert L. Gallawa (303)

497-3761; or Matt Young (303) 497-3223]

September 14-16 (Research Triangle Park,

NC)

VLSI and GaAs Packaging Workshop.

This Workshop is co-sponsored by the

Components, Hybrids, and Manufacturing

Technology Society of IEEE and NBS;

attendees are expected to be knowledgeable in the field and to participate in

discussions. Topic areas include: VLSI

and wafer scale package design (characterization and implementation, cost and

performance driven solutions); package

thermal design (characteristics, re-
CEEE Technical Publication Announcements - July 87 Page 1

3

CEEE Calendar (cont'd.)

suits, and issues); package interconnection options (wire bonding, TAB, flip

chip, or optical) ; GaAs IC packaging

(high speed packaging considerations)

package electrical issues (reduction of

parasitics and improvements in electrical performances) ; integrating package

design (from die to system, including

assembly and test issues); VLSI package

materials advancements; die-attach solutions for large chips; new failure

mechanisms in VLSI packaging. [Contact:

George G. Harman, (301) 975-2097]

September 16-18 (Gaithersburg, MD)

Workshop on the Role of Optical Sensors

in Power Systems* Voltage and Current

Measurements* This Workshop is sponsored by NBS, the Bonneville Power

Administration ( BPA) , the Electric Power

Research Institute (EPRI), and the

Empire State Electric Ehergy Research

Corporation (ESEERC) and is intended for

research and development engineers in

utilities and in companies that supply

equipment to the utility industry. The

objective of this workshop is to identify anticipated opportunities for

improved measurement techniques that

should arise as power systems individually and collectively evolve to meet the

needs of the 1990s. Presentations will

stress the design and testing of optical

systems for 60-Hz voltage or current

measurement; the interfacing of electronic or optical components with existing metering and control systems; opportunities for new measurement hardware

resulting from increased automated control of power systems and of the testing

of power system components; and optical

techniques for the measurement of electric and magnetic fields in power systems or system components. The results

of an NBS study evaluating optical techniques for power-system electrical measurements and carried out in agreement

with BPA , EPRI, and ESEERC will be presented as an invited keynote. [Contact:

Raymond S. Turgel, (301) 975-2420 or Robert E. Hebner, (301) 975-2403]

September 22-25 (Boulder, CO)

Noise Measurement Seminar* This fourday course is presented and hosted by

the Electromagnetic Fields Division in

cooperation with representatives from

industry and the NBS Time and Frequency

Division. It is intended for practicing

noise metrologists and technical managers responsible for systems in which

accurate measurements of thermal and

phase noise are important. Attendees

will learn the most important precautions to take in making accurate noise

measurements and will receive a set of

notes that are suitable for use in solving precision noise measurement problems. Course topics include reference

thermal noise sources; thermal noise

measuring systems and techniques; phase

noise; and the problems of measuring

thermal noise in passive components,

amplifiers, and communication systems.

The course design combines formal lectures on theory presented by NBS staff

and industry experts with demonstrations

in NBS laboratories and demonstrations

of commercial equipment. A special

feature of the Seminar is the opportunity each day for attendees to share

their experiences in solving specific

problems or their insights on practical

noise measurement issues through short

presentations to the assembled group.

Time is scheduled for group discussions

of these presentations and other topics

raised by the Seminar. [Contact: Sunchana Perera (303) 497-3546]

October 26-28 (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers (Nineteenth Boulder

Damage Symposium). This Symposium is

cosponsored by the National Bureau of

Standards, the American Society for

Testing and Materials, the Air Force

Office of Scientific Research, the Office of Naval Research, and the Defense

Advanced Research Projects Agency and

constitutes a principal forum for the

exchange of information on the physics

and technology of materials for high-
Page 14 CEEE Technical Publication Announcements - July 87

CEEE Calendar (cont'd.)

power lasers.

Topics to be discussed include new materials, bulk damage phenomena, surface

and thin-film damage, design considerations for high-power systems, and fundamental mechanisms of laser-induced

damage. Proceedings of the Symposium

will be published (Notes The collection

of Symposium proceedings contains information on optics for all aspects of

high-power/high-energy lasers, including

environmental degradation, durability,

fabrication, material growth and deposition processes, and testing) • [Contact:

Susie A. Rivera (303) 497-5342]

December 10-11 (Gaithersburg, MD)

Power Semiconductor Devices Workshop*

This Workshop, sponsored jointly by IEEE

and NBS, is intended to bring together

for interactive participation those

actively working in the field of power

semiconductor devices. It will be held

in conjunction with the 1987 IEEE International Electron Devices Meeting in

Washington, DC. Four specific topic

areas have been selected, based on the

response to a questionnaire sent to over

200 power device researchers worldwide.

They are: power and high voltage

integrated circuits, discrete devices,

device modeling, and packaging. Attendees are expected to be prepared to

contribute to the development of re- sponses to specific questions that

arise in the context of the particular

topic areas; a final schedule identifying the topic areas should be available at the end of October. [Contact:

David L. Blackburn, (301) 975-2053]

1988 CEEE Calendar

February 10-12 (San Diego, CA)

IEEE Semiconductor Thermal and Temperature Measurement Symposium* This

fourth annual SEMI-THERM symposium

is sponsored by the Components, Hybrids,

and Manufacturing technology Society of

IEEE in cooperation with NBS and constitutes an international forum for the

presentation of new developments in, and

applications relating to, generation and

removal of heat within semiconductor

devices and measurement of junction

temperatures experienced in various

applications and environments. Major

SEMI-THERM topic areas include thermal

measurements, thermal characterization,

applications, and computation and software.

The program includes keynote speakers,

technical presentations, tutorial sessions, workshops, and an exhibit. In

addition, the Semiconductor Equipment

and Materials Institute has scheduled in

conjunction with SEMI-THERM a meeting of

its Thermal Measurements Task Force, to

which attendees are invited. [Contact:

Frank F. Oettinger, (301) 975-2054]

May 11-13 (Los Angeles, CA)

Intersociety Conference on Thermal

Phenomena in Fabrication and Operation

of Electronic Components . This Conference is sponsored by the Components,

Hybrids, and Manufacturing Technology

Society of the IEEE, in cooperation with

ASME Committee K-16 on Heat Transfer and

NBS. It is intended to provide an interdisciplinary forum for exploring

the progress made in understanding,

analyzing, and modeling thermal transport processes and thermally induced

failures in the fabrication, assembly,

and use of logic, memory, and datastorage systems. Major topic areas

covered are 1) processing and fabrication, including state-of-the-art semiconductor crystal growing techniques;

thermal stress in wafers, chips, substrates, PC boards, and joints; and

encapsulant behavior with respect to

solidification, outgassing, mechanical

properties, and water vapor diffusion

and absorption; 2) packaging technology,

including means for cooling components

from cryogenic to high temperatures and

reliability as affected by failure

mechanisms such as dopant migration and

intermetallic growth; and 3) peripheral
CEEE Technical Publication Announcements - July 87 Page 1

5

1 988 CEEE Calendar (cont'd.)

equipment, including data storage in

both magnetic and optical media and

thermal issues in dot-matrix and thermal

printer heads. The conference is being

held in conjunction with the Electronics

Components Conference (May 9-11) at the same site. [Contact: Frank F. Oettinger, (301) 975-2054]

CEEE SPONSORS

National Bureau of Standards

Department of Defense

Defense Advanced Research Project

Agency; Defense Nuclear Agency;

National Security Agency; Combined

Army/Navy/Air Force Calibration

Coordination Group

U.S. Air Force

Bolling Air Force Base; Hanscom Air

Force Base; Newark Air Force

Station; Rome Air Development

Center; Space Division; Space & Missile Organization; Research

Projects Office; Wright-Patterson Air

Force Base

U.S. Army

Aberdeen Proving Ground; Aviation

Research & Development Command; Fort

Belvoir; Fort Monmouth; Harry Diamond

Laboratories; Materials & Mechanics

Research; Redstone Arsenal

U.S. Navy

Aviation Logistics Center (Patuxent

River); Metrology Energy Center/Seal

Beach; Naval Air Test Center; Naval

Ocean Systems Center; Naval Research

Laboratory; Naval Sea Systems

Command; Naval Surface Weapons

Center; Naval Weapons Support Center

(Crane); Office of Naval Research

Department of Commerce

NOAA

Department of Energy

Bonneville Power Administration;

Energy Systems Research; Fusion

Energy; High Energy & Nuclear

Physics

Department of Justice

Law Enforcement Assistance

Administration

Department of Transportation

National Highway Traffic Safety

Department of Treasury

Bureau of Engraving & Printing

The Charles Stark Draper Laboratory

Food and Drug Administration

Hughes Aircraft Company

International Copper Research

Association

International Telecommunications

Satellite Organization

Environmental Protection Agency

Office of Radiation Programs

National Aeronautics and Space

Administration

Lyndon B. Johnson Space Center

Sandia National Laboratories
NBS-114A (REV. 2 -80 ) U.S. DEPT. OF COMM. 1. PUBLICATION OR 2. Performing Organ. Report No. BIBLIOGRAPHIC DATA

REPORT NO.

SHEET (See instructions)

NBSIR 87-3600

3. Publication Date July 1987

4. TITLE AND SUBTITLE

Center for Electronics and Electrical Engineering Technical Publication Announcements

Covering Center Programs, July to September 1986, with 1987 CEEE Events Calendar

5. AUTHOR(S)

E. Jane Walters, compiler

6. PERFORMING ORGANIZATION (If joint or other than NBS, see Instructions)

NATIONAL BUREAU OF STANDARDS

U.S. DEPARTMENT OF COMMERCE

GAITHERSBURG, MD 20899

7. Contract/Grant No.

8. Type of Report & Period Covered]

9.

SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City. State. ZIP)

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

10. SUPPLEMENTARY NOTES

All technical information included in this document has been previously approved for

publication.

| | Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bibliography or literature survey, mention it here)

This is the tenth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. This issue of the Center for Electronics and Electrical

Engineering Technical Publication Announcements covers the third quarter of

calendar year 1986. Abstracts are provided by technical area for papers published

this quarter.

12.

KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolons)

antennas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers; semiconductors ; superconductors

13. AVAILABILITY

£&] Unlimited

| | For Official Distribution. Do Not Release to NTIS

| Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C. 20402.

fcyl Order From National Technical Information Service (NTIS), Springfield, VA. 22161

14. NO. OF

PRINTED PAGES

19

15. Price

$9.95

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KEY CONTACTS:

Center Headquarters (720) Director, Mr. Judson C. French (301) 075-2220

Deputy Director, Mr. Robert I. Scace (301) 075-2220

Electrosystems Division (722) Chief, Dr. Oekars Petersons (301) 075-2400

Electromagnetic Fields Division (723) Chief, Dr. Ramon C. Baird (303) 407-3131

Electromagnetic Technology Division (724) Chief, Dr. Robert A. Kamper (303) 407-3535

Semiconductor Electronics Division (727) Chief, Mr. Frank F. Oettlnger (301) 075-2054

INFORMATION:

For additional Information on the Center for Electronics and Electrical Engineering, write or call:

Center for Electronics and Electrical Engineering

National Bureau of Standards

Metrology Building, Room B-358

Gaithersburg, MD 20890

Telephone (301) 975-2220