NBSIR 88-3854

(

Center for Electronics and

Electrical Engineering lo

Technical

Publication

Announcements

Covering Center Programs,

January to March 1988,

with 1988 CEEE Events Calendar

September 1988

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899
INTRODUCTION TO THE CEEE TECHNICAL PUBLICATION ANNOUNCEMENTS

This is the sixteenth issue of a quarterly publication providing information on the

technical work of the National Institute of Standards and Technology (formerly the

National Bureau of Standards) Center for Electronics and Electrical Engineering. This

issue of the CEEE Technical Publication Announcements covers the first quarter of

calendar year 1988.

Organization of Bulletin : This issue contains citations and abstracts for Center

publications published in the quarter. Entries are arranged by technical topic as

identified in the table of contents and alphabetically by first author within each

topic. Following each abstract is the name and telephone number of the individual to

contact for more information on the topic (usually the first author) . This issue

also includes a calendar of Center conferences and workshops planned for calendar

year 1988 and a list of sponsors of the work.

Center for Electronics and Electrical Engineering : Center programs provide national

reference standards , measurement methods, supporting theory and data, and traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U.S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor Technology Program, carried out by the Semiconductor Electronics Division in Gaithersburg, MD, and the Signals and Systems Metrology Program, carried out by the Electrosystems Division in Gaithersburg and the Electromagnetic Fields and Electromagnetic

Technology Divisions in Boulder, CO. See the table of contents on the opposite page

for identification of the topics covered by each program, as represented in this

issue. Key contacts in the Center are given on the back cover; readers are encouraged

to contact any of these individuals for further information.

Center sponsors : The Center Programs are sponsored by the National Institute of Standards and Technology and a number of other organizations, in both the Federal and

private sectors; these are identified on page 13.

Note on Publication Lists : Guides to earlier as well as recent work are the publication lists covering the work of each division. These lists are revised and reissued

on an approximately annual basis and are available from the originating division. The

.current set is identified in the Additional Information section, page 11.
~EEE Technical Publication Announcements - September 1988 Page 1

TABLE OF CONTENTS

INTRODUCTION inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM ... 2

Silicon Materials . .... 2

Analysis Techniques ........ 2

Integrated Circuit Test Structures ... 2

Device Physics and Modeling 3

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION . . 3

Waveform Metrology ... 3

Antenna Metrology 5

Complex Testing 6

Other Fast Signal Topics 6

ELECTRICAL SYSTEMS 7

Power Systems Metrology 7

Superconductors 8

ELECTROMAGNETIC INTERFERENCE 9

Radiated Electromagnetic Interference 9

Conducted Electromagnetic Interference 11

ADDITIONAL INFORMATION 11

1988 CEEE CALENDAR 12

SPONSOR LIST 13

KEY CONTACTS IN CENTER, CENTER ORGANIZATION . back cover
Page 2

SEMICONDUCTOR TECHNOLOGY

CEEE Technical Publication Announcements - September 1988

Silicon Materials

Bennett, H.S., Indirect Energy Gap of

Si: Doping Dependence, Properties of

Crystalline Silicon, Chapter 7.3, EMIS

Datareview (Institute of Electrical

Engineers, London, February 1988), pp.

174-181.

The doping dependence of the indirect

energy gap of silicon is reviewed for

the Electronic Materials Information

Services (EMIS) of IEE (London) . This

review is a guide with commentary to

assist readers in selecting which values

are best for their applications. Our

state of knowledge in this area is such

that in many cases the intended

application for the data on bandgap

changes determines the appropriate

values to use. Data from interpreting

both electrical and optical measurements

are given.

[Contact: Herbert S. Bennett, (301)

975-2081]

Analysis Techniques

Jach, T. , Novotny, D.B., Carver, G.P.,

Geist, J., and Spal, R.D., An X-Ray

Monochromator Crystal Which Detects the

Bragg Condition, Nuclear Instrumentation and Methods in Physics Research,

Vol. A263 (North-Holland, Amsterdam,

1988), pp. 522-524.

We have fabricated a (111) silicon x-ray

monochromator crystal with a diode

diffused into its surface. Without

suffering any apparent degradation in

its rocking- curve width at the Bragg

condition, the crystal provides a dc

current which changes dramatically at

the diffraction of a monochromatic x-ray

beam. The current change is directly

attributable to extinction at the Bragg

angle. It provides a new means to align

the two crystals of a double -crystal xray monochromator using a feedback

circuit

.

[Contact: Donald B. Novotny, (301) 975-

2699]

Integrated Circuit Test Structures

Kim, J.S., Linholm, L.W.

,

Barley, B.L. , Hanes, M.H.

,

and Cresswell, M.W.

,

A

Microelectronic Test Structure for

Thickness Determination of Homogeneous

Conducting Thin Films in VLSI Processing, Proceedings of the 1988 IEEE

International Conference on Microelectronic Test Structures, Long Beach,

California, February 22-23, 1988, pp.

34-38.

This paper describes a new test

structure for use in determining the

thickness of a uniform conducting film.

The structure incorporates the van der

Pauw cross method to determine the

effective sheet resistance of a

vertical, uniformly doped cross section

of a polysilicon film and a bridge

resistor to determine the thickness of

the film. By using a composite

structure, which consists of the

vertical cross structure and a conventional planar cross -bridge test

structure, It is possible to obtain the

thickness, linewidth, and resistivity of

a conducting line.

[Contact: Jin S. Kim, (301) 975-2238]

Buehler, M.G., Linholm, L.W.

,

Tyree,

V.Gc, Allen, R.A.

,

Blaes, B.R., Hicks,

K.Ac , and Jennings, G.A., CMOS Process

Monitor, Proceedings of the 1988 IEEE

International Conference on Microelectronic Test Structures, Long Beach,

California, February 22-23, 1988, pp.

164-168. [Identical publication

entitled Proposed End-of-Fabrication

Parametric Test Structures for the CMOS

Process Monitor will appear as Jet

Propulsion Laboratory Report #D-4520.]

This document describes a proposed end-

©£- fabrication CMOS process monitor for

VHSXC/VLSX wafer fabrication qualification. The discussion of the CMOS

process monitor includes a description

of the test structures, test methods,

and data analysis techniques needed to

acquire 26 key electrical parameters

that characterize a CMOS process. This

process monitor has been under develop-
CEEE Technical Publication Announcements - September 1988 Page 3

IC Test Structures (cont'd.)

nent for a number of years at JPL's VLSI

Technology Group and the University of

Southern Califomia/Information Sciences

Institute MOSIS Project.

[Contact: Loren W. Linholm, (301) 975-

2052]

Linholm, L.W. , Khera, D. , Reeve, C.P.,

and Cresswell, M.W. , A Developmental

Expert System for Test Structure Data

Evaluation, Proceedings of the 1988

IEEE International Conference on

Microelectronic Test Structures, Long

Beach, California, February 22-23,

1988, pp. 160-163.

This paper describes a developmental

expert system, rule generation techniques, a test chip, data handling

methods, and statistical data reduction

techniques for characterizing the

performance of a l-/xm lithography

process. Examples of test results and

an expert system diagnosis are given.

[Contact: Loren W. Linholm, (301) 975-

2052]

Schafft, H.A. , and Albers, J., Thermal

Interactions Between Electromigration

Test Structures, Proceedings of the

1988 IEEE International Conference on

Microelectronic Test Structures, Long

Beach, California, February 22-23,

1988, pp. 132-137.

The thermal interaction between

electromigration test structures on a

test chip, when subjected to a high

current -density stress, must be

considered when making median- time- to

failure measurements

.

[Contact: Harry A. Schafft, (301) 975-

2234]

Suehle, J.S., and Galloway, K.F., Test

Circuit Structures for Characterizing

the Effects of Localized Hot-CarrierInduced Charge in VLSI Switching

Circuits, Proceedings of the 1988 IEEE

International Conference on Microelectronic Test Structures, Long Beach,

California, February 22-23, 1988, pp.

126-131.

Data are presented that were collected

from test circuit structures that were

hot-carrier-stressed under conditions

existing in actual VLSI switching

circuits. It is shown that the

localized nature of hot-carrier- induced

damage to n- channel MOSFETs must be

considered to accurately model these

data by computer circuit simulations.

[Contact: John S. Suehle, (301) 975-

2247]

Device Physics and Modeling

Wilson, C.L., Hydrodynamic Carrier

Transport in Semiconductors with

Multiple Band Mini mums , IEEE Transactions on Electron Devices, Vol. 35, No.

2, pp. 180-187 (February 1988).

Carrier transport equations for analysis

of semiconductor devices fabricated in

materials with multiple band minimums

,

such as GaAs, are presented. This

revised formulation has several

advantages over previous models.

Separation of the carrier transport into

central and satellite components

improves numerical stability in

numerical simulations and allows the

physical processes associated with each

band to be modeled in greater physical

detail. This permits processes

previously neglected in hydrodynamic

models, such as electron injection into

insulating substrate material and deep

electron traps in GaAs transistors, to

be included. A model of a GaAs MESFET,

which illustrates the importance of the

new physical effects and achieves

reasonable agreement with experiment

without use of adjustable parameters, is

presented as an example.

[Contact: Charles L. Wilson, (301) 975-

2080]

FAST SIGNAL ACQUISITION, PROCESSING,

AND TRANSMISSION

Waveform Metrology

Leedy, T.F.

,

and Bell, B.A.

,

Concepts
Page ~4 CEEE Technical Publication Announcements - September 1988

Waveform Metrology (cont'd.)

for ATE Systems Calibration: Transport

Standards to Achieve Traceability to

National Standards, Proceedings of the

1988 Measurement Science Conference,

Long Beach, California, January 23-29,

1988, pp. 307-313.

Technical objectives are presented for a

proposed transport standard to establish

direct traceability of selected lowfrequency electrical quantities between

the National Bureau of Standards and

automatic test systems including

calibration laboratories that support

these automatic test systems. The

transport standard would consist of

precision ac and dc voltage and

frequency sources and could also include

more specialized measurement modules in

future versions. The transport standard

would allow the intercomparison of dc

voltage, ac (root-mean-square) voltage,

total harmonic distortion, phase, and

frequency measurements made using

automatic test equipment systems.

[Contact: Thomas F. Leedy, (301) 975-

2410]

Petersons, 0., NBS Initiatives in

TMDE/ATE Diagnostics, Symposium Record,

National Security Industrial Association Diagnostics/Prognostics Symposium,

Alexandria, Virginia, October 20-21,

1987, pp. 190-193 (1988).

Advances in technology dictate that the

National Bureau of Standards consider

how to provide metrological support for

automatic test equipment (ATE) and the

area of complex systems in general.

Several decades ago, standard instruments were relatively simple devices

such as standard resistors, electrochemical cells for voltage, and relatively

simple electromechanical indicating

meters. Modem precision instruments,

however, such a digital multimeters,

calibrators, and waveform analyzers are

very complex, computer-controlled

systems having a broad spectrum of

parameters including wide frequency and

dynamic ranges and high speeds of

operation. While complete characterization was possible and economical for the

older and simpler standard instruments,

this may not be true for modern

measurement systems. Besides the

calibration itself, consideration must

be given to such items as judicious

selection of a limited number of test

points, test coverage, and confidence

levels. These considerations relate, at

least partly, to the subject of the

Conference. In addition, NBS has strong

interest in the diagnostics of systems

that are required to produce accurate

,

reliable, and economical measurements.

Such systems include state-of-the-art

test, measurement, and diagnostic

equipment (TMDE) and ATE as used by

defense forces.

This presentation outlines several

activities along the lines described

above that are conducted at NBS

,

particularly in the Electrosystems

Division. First, some basic tools and

expertise that are applicable to TMDE

and ATE diagnostics are discussed,

followed by examples of applications,

particularly to DoD systems and TMDE.

[Contact: Oskars Petersons, (301) 975-

2400]

Turgel, R.S., Phase Meter Calibration at

NBS, Journal of Research of the

National Bureau of Standards, Vol. 93,

No. 1, pp. 53-60 (January- February

1988).

To provide a phase meter calibration

service, a phase angle calibration

standard has been developed at NBS.

This standard is a signal generator with

two sinusoidal outputs and uses direct

digital synthesis to generate the

signals. The phase angle between the

two sinusoids is determined by the input

parameters in the calculation of the

sets of digital values from which the

analog output is synthesized. An autozero compensation mode corrects for

residual phase differences in the two

output channels. The phase resolution

is better than 0.002 deg over a

frequency range from 2 Hz to 5 kHz and
CEEE Technical Publication Announcements - September 1988 Page 5

Waveform Metrology (cont'd.)

0.005 deg from 5 kHz to 50 kHz.

Phase meter calibration data are fitted

to a linear model from which appropriate

corrections for the phase meter readings

can be derived. Statistical treatment

of the data provides an estimate of the

uncertainty of the corrected phase meter

readings relative to the phase angle

calibration standard.

[Contact: Raymond S. Turgel, (301) 975-

2420]

Turgel, R.S., Laug, O.B., and Leedy,

T.E., Electrical Performance Tests for

True-RMS Voltameters, NBSIR 88-3736

(March 1988).

Electrical performance test procedures

for a true root-mean- square (rms)

voltmeter were developed by the National

Bureau of Standards for the U.S. Army

( Communications -Electronics Command. The

; report provided detailed, step-by-step

i test procedures that are based on the

specifications supplied by the Army for

the purpose of evaluating the bid

samples of this type of instrument.

Examples are provided of the data sheets

and tables for recording of interim data

and the final results.

This report discusses the philosophy

underlying each of the measurement

procedures from a point of view of the

basic metrology required to perform the

measurements. In addition, the sources

of measurement error are discussed.

[Contact: Raymond S. Turgel, (301) 975-

2420]

Antenna Metrology

Hill, D.A.

,

and Francis, M.H.

,

Out-ofBand Response of Antenna Arrays, IEEE

Transactions on Electromagnetic

Compatibility, Vol. EMC-29, No. 4, pp.

282-288 (November 1987). [Also

appeared in the Proceedings of the 1987

IEEE International Symposium on

Electromagnetic Compatibility,

Symposium Record, August 25-27, 1987,

Atlanta, Georgia, pp. 435-438. An

expanded version appeared as NBSIR 86-

2037 (June 1986).]

The response of antenna arrays to outof-band frequencies has been analyzed

using the effective aperture approach.

An average value of effective aperture

can be obtained by averaging the

incidence angle and the polarization of

the incident field. Far- field patterns

have also been calculated by treating

the array element excitations as random

variables. The randomness in the

element excitations causes a decrease in

directivity and an increase in side lobe

level.

[Contact: David A. Hill, (303) 497-

3472]

Lewis, R.L.

,

Spherical -Wave SourceScattering Matric Analysis of Coupled

Antennas; A General System Two -Port

Solution, IEEE Transactions on Antennas

and Propagation, Vol. AP-35, No. 12,

pp. 1375-1380 (December 1987).

Expressions are given for the coupling

between two antennas in terms of each

antenna's spherical -wave sourcescattering matrix. A comparison with

the "classical" scattering matrix

representation is given in sufficient

detail to permit conversion back and

forth between the source-scattering

matrix and the classical scattering

matrix. The paper concludes with

expressions for the transmission

formulas , showing two different

expressions corresponding to reversing

the direction of propagation. However,

if both antennas are reciprocal with

equal characteristic waveguide impedances, then the two-port scattering

matrix is a symmetric matrix.

[Contact: Richard L. Lewis, (303) 497-

5196]

Lewis, R.L.

,

and Wittmann, R.C.,

Improved Spherical and Hemispherical

Scanning Algorithms, IEEE Transactions

on Antennas and Propagation, Vol. AP35, No. 12, pp. 1381-1388 (December

1987).
.Page. 6, CEEE Technical Publication Announcements - September 1988

Antenna Metrology (cont'd.)

A probe-corrected spherical -scanning

algorithm has been developed which is

applicable when the antenna under test

radiates negligibly into its rear

hemisphere. Compared to an efficient

version of the best previously published

full-sphere scanning algorithm, it is

found that our hemispherical scanning

algorithm is over three and a half

times more efficient. Improvements have

also been made to full -sphere scanning,

with the result that our new spherical

scanning algorithm is twice as efficient

as the best previous full -sphere

algorithm. We also show that our new

formulations constitute an exact

inversion of the band- limited sphericalcoordinate representation of the

received signal (i 0 e. , no aliasing

errors are introduced)

.

[Contact: Richard L. Lewis, (303) 497-

5196]

Complex Testing

Petersons, 0., NBS Initiatives in

TMDE/ATE Diagnostics, Symposium Record,

National Security Industrial Association Diagnostics/Prognostics Symposium,

Alexandria, Virginia, October 20-21,

1987, pp. 190-193 (1988)

.

Advances in technology dictate that the

National Bureau of Standards consider

how to provide metrological support for

automatic test equipment (ATE) and the

area of complex systems in general.

Several decades ago, standard instruments were relatively simple devices

such as standard resistors, electrochemical cells for voltage, and relatively

simple electromechanical indicating

meters. Modem precision instruments,

however, such a digital multimeters,

calibrators, and waveform analyzers are

very complex, computer-controlled

systems having a broad spectrum of

parameters including wide frequency and

dynamic ranges and high speeds of

operation. While complete characterization was possible and economical for the

older and simpler standard instruments,

this may not be true for modern

measurement systems. Besides the

calibration itself, consideration must

be given to such items as judicious

selection of a limited number of test

points, test coverage, and confidence

levels. These considerations relate, at

least partly, to the subject of the

Conference. In addition, NBS has strong

interest in the diagnostics of systems

that are required to produce accurate

,

reliable, and economical measurements.

Such systems include state-of-the-art

test, measurement, and diagnostic

equipment (TMDE) and ATE as used by

defense forces.

This presentation outlines several

activities along the lines described

above that are conducted at NBS

,

particularly in the Electrosystems

Division. First, some basic tools and

expertise that are applicable to TMDE

and ATE diagnostics are discussed,

followed by examples of applications,

particularly to DoD systems and TMDE.

[Contact: Oskars Petersons, (301) 975-

2400]

Other Fast Signal Topics

Bell, B.A., Stenbakken, G.N., Flynn,

D.R. , Evans, D.J., Burnett, E.D.,

Nedzelnitsky , V. , and Eberhardt, K.R. , Evaluation of a Copy Prevention Method

for Digital Audio Tape Systems, NBSIR

88-3725 (February 1988).

The National Bureau of Standards in

response to requests from the U.S.

Congress tested a system designed to

prevent unauthorized copying by digital

audio tape (DAT) recorders of suitably

encoded audio recordings. The system,

designed by CBS Records, filters out a

narrow range of frequencies from the

spectrum of the original sound in the

region of 3840 Hz, thereby encoding the

material with a "notch" in the frequency

spectrum so that a DAT recorder equipped

with the system's decoding circuitry can

sense the presence of a prescribed notch

in the spectrum and inhibit recording.
CEEE Technical Publication Announcements - September 1988 Page 7

Other Fast Signal Topics (cont'd.)

The congressional questions and the NBS

conclusions are:

1 . Does the copy prevention system

achieve its purpose?

NBS Conclusion : The system does not

achieve its stated purpose.

2 . Does the system diminish the quality

[

of the prerecorded material into which

the notch is inserted?

NBS Conclusion : The system's encoder

alters the original electrical signal.

For some listeners for some selections,

this results in a discernible difference

between prerecorded notched and

unnotched material.

3

.

Can the system be bypassed and, if

so. how easily?

NBS Conclusion : The copy prevention

system can be bypassed easily.

[Contact: Barry A. Bell, (301) 975-

2402]

Jesch, R.L. , Fixed and Base Station FM

Transmitters, National Institute of

Justice, NIJ Standard-0201.01 (September 1987).

This document establishes minimum

performance requirements and methods of

test for fixed and base station

frequency-modulated (FM) transmitters.

The standard applies primarily to the

law enforcement community, and as such

covers the four frequency bands , 25 to

50 MHz, 150 to 174 MHz, 400 to 512 MHz,

and 806 to 866 MHz. This standard

supersedes NILECJ-STD-0201 . 00 , Fixed and

Base Station FM Transmitters.

[Contact: Ramon L. Jesch, (303) 497-

3496]

ELECTRICAL SYSTEMS

Power Systems Metrology

Martzloff, F.D., Power Quality Measurements : Bringing Order Out of Chaos

,

Energy Technology XV -- Repowering

America (Proceedings of the Energy

Technology Conference, Washington, DC,

February 17-19, 1988) (Government

Institutes, Inc., Maryland), pp. 947-

959.

The quality of the power supplied to

sensitive electronic equipment is an

important issue. Quantifying this

quality, however, is difficult under the

present state of nonexistent or

uncoordinated standards concerning two

related questions: ( 1 ) what levels of

power quality are required for what

types of loads, and ( 2 ) what measurement

techniques are required to determine

reliably the level of disturbances that

reduce quality. Development of

standards by the consensus process and

voluntary compliance, although a slow

process, is a mechanism for reaching

technically sound and cost-effective

solutions. Several standards projects

are in progress, but need industrywide support to become the generally

accepted basis for valid and useful

measurements of power quality.

[Contact: Francois D. Martzloff, (301)

975-2409]

Sieck, L.W.

,

and Van Brunt, R.J., Rate

Constants for F" Transfer from SFg to

Fluorinated Gases and SO2

. Temperature

Dependence and Implications for

Electric Discharge in SFg, Journal of

Physical Chemistry, Vol. 92, No. 3, pp.

708-713 (1988).

The reactivity of SFg” towards SO2 , SOF2 , SO2 F5 , SOF4 , SF4 , and SiF4 has

been investigated using the technique of

pulsed-electron-beam, high-pressure mass

spectrometry. With the exception of the

SF5

~ + SiF4 reaction, all of the pairs

exhibited a negative temperature

coefficient in that the rate constants

for F“ transfer decreased substantially

with increasing temperature. The

reaction SFg

- + SiF4

•+ SiF5

~ + SF5 was

found to proceed with a rate constant of

5.6 ± 0.8 x

10“ I® cm^/mol-s throughout

the temperature range studied (298 to

510 K)

,

which corresponds to a collision

efficiency of unity. The other

reactions were found to approach unit

collision efficiency only at reduced

temperatures (<300 K)

.

[Contact: Richard J. Van Brunt, (301)
Page 8 CEEE Technical Publication Announcements - September 1988

Power Systems Metrology (cont'd.)

975-2425]

Superconductors

Chen, D.-X, Goldfarb, R.B. , Nogues, J.,

and Rao, K.V. , Magnetic Susceptibility

of Sintered and Powdered Y-Ba-Cu-0

(Original title: Susceptibility

Measurements of a Sintered and Powdered

Y Ba-Cu-0 Superconductor) , Journal of

Applied Physics, Vol. 63, No. 3, pp.

980-983 (1 February 1988).

The real and imaginary parts of magnetic

ac susceptibility of a sintered Y-BaCu-0 superconductor were measured as

functions of temperature. The susceptibility may be separated into two

contributions, one sensitive and the

other relatively insensitive to the

magnitude of the measuring field. The

former is partially suppressed upon

coarsely crushing the sample. It is

completely suppressed after finely

powdering, whereupon the susceptibility

curves become insensitive to the

magnitude of the measuring field.

Several models might be consistent with

the results.

[Contact: Ronald B. Goldfarb, (303)

497-3650]

Ekin, J.W., Transverse Stress Effect on

Multifilamentary Nb3Sn Superconductor,

Advances in Cryogenic Engineering

Materials, Vol. 34, pp. 547-552 (Plenum

Publishing Corporation, 1988)

.

A large reversible degradation of the

critical current of multifilamentary

Nb 3 $n superconductors has been observed

under application of uniaxial compressive stress at 4 K applied transverse to

the conductor axis. In bronze-process

multifilamentary NbjSn, the onset of

significant degradation occurs at about

50 MPa. The intrinsic effect of

transverse stress on the upper critical

field is about ten times greater than

for axial stress. Although transverse

stress on the Nb 3 Sn filaments is less

than axial stress, it will need to be

considered in the internal stress

design of large magnets. The effect

scales with conductor thickness and

consequently will place limits on

conductor dimensions and the spacing

between distributed reinforcement in

large magnets.

[Contact: John W. Ekin, (303) 497-

5448]

Goodrich, L.F., Bray, S.L., and Clark,

A . F . , Current-Ripple Effect on

Superconductive DC Critical Current

Measurements, Advances in Cryogenic

Engineering Materials, Vol. 34, pp.

1019-1026 (1988).

The effect of sample current power

supply ripple on the measurement of dc

critical current is reported. Measurements were made on multifilamentary NbTi

superconductors. Ripple in a current

supply becomes more significant above

500 A because effective filtering

becomes more difficult. The presence of

current ripple reduces the measured dc

critical current. Ripple can also

directly affect the voltmeter used for

the measurements, because it has to

operate with a noisy input. The

quantitative effect of current ripple

was studied using a battery current

supply instrumented to allow the

creation of ripple current with variable

frequency and amplitude. Problems

common to all large conductor critical

current measurements are discussed.

[Contact: Loren F. Goodrich, (303) 497-

3143]

Moreland, J.M., Ekin, J.W., Goodrich,

L.F., Capobianco, T.E., and Clark,

A.F., Electron Tunneling Measurements

In LaSrCuO and YBaCuO, Proceedings of

Symposium S, 1987 Spring Meeting of the

Materials Research Society, Anaheim,

California, April 23-24, 1987, pp. 273-

275 (1988).

The break junction technique whereby

vacuum tunneling occurs within the

fracture of a bulk sample is used to

study the LaSrCuO and YBaCuO perovskite

superconductors. Structure* in the
CEEE Technical Publication Announcements - September 1988 Page 9

Superconductors (cont'd.)

current-versus-voltage characteristics

is reminiscent of previous quasiparticle

curves obtained for BCS superconducting

materials. Some curves have anomalous

qualities, including large dips in the

junction conductance with increasing

voltage just above a well-defined

tunneling gap edge, linearly increasing

junction conductance with applied bias,

along with features occurring near

voltage intervals following a 1, 3, 5

pattern.

[Contact: John M. Moreland, (303) 497-

3641]

Moreland, J.M., Goodrich, L.F.

,

Ekin,

J.W., Capobianco, T.E., and Clark,

A.F. , Anomalous Behavior of Tunneling

Contacts in Superconducting Perovskite

Structures, Advances in Cryogenic

Engineering Materials, Vol. 34, pp.

625-632 (Plenum Publishing Corporation,

1988).

Our break junction results for electron

tunneling spectroscopy of the perovskite

superconductors La-Sr-Cu-0 and Y-Ba-Cu-0

are similar to those obtained using

thin- film, scanning tunneling microscopy, and point-contact methods.

Energy gap structures are sometimes

observed in the measured current-voltage

characteristics. More often, however,

the characteristics are anomalous when

compared to previous tunneling studies

of BCS superconductors. The anomalies

include linearly increasing conductance

with voltage, large deviations in

junction conductance above the gap edge,

and junction diode action. We discuss

some possible explanations for these

observations

.

[Contact: John M. Moreland, (303) 497-

3641]

ELECTROMAGNETIC INTERFERENCE

Radiated Electromagnetic Interference

Adams, J.W., Ondrejka, A.R.

,

and Medley,

H.W. , Time-Domain System for Identification of the Natural Resonant

Frequencies of Aircraft Relevant to

Electromagnetic Compatibility Testing,

NBSIR 87-3077 (November 1987).

A method for measuring the natural

resonant frequencies of a structure is

described. The measurement involves

radiating an aircraft with an impulsive

electromagnetic field and receiving the

echo reflected from this aircraft.

Resonances are identified by using a

mathematical algorithm based on Prony's

method to operate on the digitized

reflected signal. The measurement

system consists of special transverse

electromagnetic horns, pulse generators,

a time -domain system, and an implementation of Prony's algorithm. The

frequency range covered is 5 to 250

MHz ; this range is determined by antenna

and circuit characteristics.

The use of this system is shown, and

measured data from several different

helicopters are presented in different

forms . These different forms are needed

to determine which of the resonant

frequencies are real and which are

false. The false frequencies are

byproducts of Prony's algorithm.

[Contact: John W. Adams, (303) 497-

3328]

Cavcey, K.H.

,

and Friday, D.S., Aircraft

Field Degradation and Electromagnetic

Compatibility, NBSIR 88-3083 (January

1988).

This paper discusses the first tests

undertaken to study the problem of field

degradation in army aircraft (helicopters and one fixed-wing airplane) due to

the deterioration of electronic and

electrical systems. The electromagnetic

compatibility of such systems was

investigated by passive measurement of

each aircraft as a collection of radiofrequency sources. Methods for

detection of these sources were

developed that included sensitivity to

both stationary and nonstationary noise

that existed.

The collected data were studied to see
Page 10 CEEE Technical Publication Announcements - September 1988

Radiated EMI (cont'd.)

if there existed any obvious factors

derived from the data that one could use

to correct potential problems that

might affect flight safety. Emphasis

was placed upon making such test methods

appropriate, inexpensive, and easily

performed by army field personnel. In

addition, applications to quality

control or acceptance testing, as

related to the Environmental Stress

Screening program, were examined.

[Contact: Kenneth H. Cavcey, (303) 497“

3995]

Crawford, M.L., Koepke, G.H., and

Ladbury, J.M., EMR Test Facilities,

Evaluation of Reverberating Chamber

Located at RADC, Griffiss AFB, Rome,

New York, NBSIR 87-3080 (December

1987).

This report describes measurement

procedures and results obtained from

evaluating the reverberating chamber

facility located at the Rome Air

Development Center (RADC) , Griffiss Air

Force Base, Rome, New York. The

facility was developed by the RADC for

use in measuring and analyzing the

electromagnetic susceptibility/

vulnerability of weapon systems and the

shielding effectiveness of enclosures

and shielding materials. A brief

description of the facility, including

the instrumentation used for performing

its evaluation and calibration by the

National Bureau of Standards, is given.

Measurements described include: (1)

evaluation of the chamber e s transmitting

and receiving antennas' voltage

standing-wave ratios; (2) measurement of

the chamber's insertion loss or coupling

efficiency versus frequency; (3)

measurement of the chamber's tuner

effectiveness; (4) determination of the

electric- (E-) field uniformity in the

chamber's test zones versus frequency;

(5) determination of the absolute

amplitude calibration of the test Efields in the chamber based upon the

reference antenna's received power

measurements and calibrated dipole probe

antenna measurements; (6) comparison of

reference standard equipment under test

responses to test fields established

inside the RADC reverberating chamber

and the NBS anechoic chamber; and (7)

evaluation of the performance

characteristics of the reverberating

chamber excited by pulsed radio

frequency (rf) at selected discrete

frequencies as a function of pulse width

(0.2 to 20 ps) and the chamber's quality

factor (Q) . Conclusions indicate that

the chamber can be used at frequencies

down to approximately 150 MHz for

continuous -wave (cw) testing, and for rf

pulsed immunity testing with pulse

widths as short as 0.3 ps by using rf

absorber loading. Immunity testing to

pulsed rf fields, however, has some

inherent limitations that are discussed

in the report. Estimates of the cw

measurement uncertainties derived

empirically from the test results are

given.

[Contact: Myron L. Crawford, (303) 497-

5497]

Randa, J., Kanda, M. , and Melquist, D.,

Possible Designs for Electric-FieldStrength Probes for Millimeter Waves,

NBSIR 88-3084 (February 1988).

Various designs are considered for

electric-field probes for the frequency

range from 26 to 110 GHz. Two particular designs are investigated in

some detail. A resistively tapered

dipole antenna with a diode detector

shows promise for frequencies up to

about 40 GHz. The second design is

based on a fiber-optically sensed

temperature sensor to detect the heating

of a resistive strip. If its sensitivity can be increased significantly,

this design may be capable of operating

to frequencies above 100 GHz.

[Contact: James P. Randa, (303) 497-

3150]

Wilson, P.F., Ondrejka, A.R. , Ma, M.T. , and Ladbury, J.M., Electromagnetic

Fields Radiated From Electrostatic

Discharges Theory and Experiment, NBS

Technical Note 1314 (February 1988).
3EEE Technical Publication Announcements

Radiated EMI (cont'd.)

rhe fields radiated by electrostatic

discharges (ESD) are studied both

theoretically and experimentally. The

ESD spark is modeled theoretically as

I

an electrically short, time -dependent,

linear dipole situated above an infinite

ground plane. Experimentally, sparks of

varying voltages are generated by a

commercially available simulator and

used to excite a number of targets

including: (1) the extended inner

conductor of a coaxial cable mounted in

a ground plane, (2) direct discharges to

a ground plane, (3) indirect radiation

from a large metal plate, (4) a metal

chair over a ground plane, and (5) a

metal trash can. Results show that

relatively low-voltage sparks (2 kV to 4

kV) excite the strongest radiated

fields. This suggests that the spark

! fields can pose a significant interfference threat to electronic equipment

iinto the gigahertz range.

| [Contact: Mark T. Ma, (303) 497-3800]

Conducted Electromagnetic Interference

Martzloff, F.D., Power Quality Measurements : Bringing Order Out of Chaos

,

Energy Technology XV -- Repowering

America (Proceedings of the Energy

Technology Conference, Washington, DC,

February 17-19, 1988) (Government

Institutes, Inc., Maryland), pp. 947-

959.

The quality of the power supplied to

sensitive electronic equipment is an

important issue. Quantifying this

quality, however, is difficult under the

present state of nonexistent or

uncoordinated standards concerning two

related questions: (1) what levels of

power quality are required for what

types of loads, and (2) what measurement

techniques are required to determine

reliably the level of disturbances that

reduce quality. Development of

standards by the consensus process and

voluntary compliance, although a slow

process , is a mechanism for reaching

technically sound and cost-effective

Page 11

solutions. Several standards projects

are in progress, but need industrywide support to become the generally

accepted basis for valid and useful

measurements of power quality.

[Contact: Francois D. Martzloff, (301)

975-2409]

ADDITIONAL INFORMATION

Lists of Publications

Gibson, K.A. , Page, J.M., and Miller,

C.K.S., A Bibliography of the NBS

Electromagnetic Fields Division

Publications, NBSIR 85-3040 (February

1986).

This bibliography lists publications of

the National Bureau of Standards'

Electromagnetic Fields Division for the

period from January 1984 through

September 1985, with selected earlier

publications from the Division's

predecessor organizations

.

[Contact: Kathryn A. Gibson, (303) 497-

3132]

Kline, K.E., and DeWeese, M.E. , Metrology for Electromagnetic Technology: A Bibliography of NBS Publications, NBSIR 87-3074 (June 1987).

This bibliography lists the publications

of the personnel of the Electromagnetic

Technology Division of NBS in the period

from January 1970 through December 1986.

A few earlier references that are

directly related to the present work of

the Division are included.

[Contact: Sarabeth Moynihan, (303) 497-

3678]

Palla, J.C., and Meiselman, B. , Electrical and Electronic Metrology: A

Bibliography of NBS Electrosystems

Division Publications, NBS list of

Publications 94 (January 1988)

.

This bibliography covers publications of

the Electrosystems Division, Center for

Electronics and Electrical Engineering,

NBS, and of its predecessor sections for

the period January 1963 to January 1988.

- September 1988
Page 12 CEEE Technical Publication Announcements - September 1988

Lists of Publications (cont'd.)

A brief description of the Division's

technical program is given in the

introduction.

[Contact: Jenny C. Palla, (301) 975-

2220 ]

Valters, E.J. , Semiconductor Measurement

Technology, NBS List of Publications 72

[a bibliography of NBS publications

concerning semiconductor measurement

technology for the years 1962-1987]

(March 1988) .

This bibliography contains reports of

work performed at the National Bureau of

Standards in the field of Semiconductor

Measurement Technology in the period

from 1962 through December 1987. An

index by topic area and a list of

authors are provided.

[Contact: E. Jane Walters, (301) 975-

2050]

RECENTLY ISSUED

STANDARD REFERENCE MATERIALS

The Semiconductor Electronics Division

announces the release of a new Standard

Reference Material (SRM) for ellipsometrically derived thickness and

refractive index of a silicon dioxide

film on silicon. Available for sale to

the public through the NBS Office of

Standard Reference Materials [for

orders, (301) 975-6776], SRM 2530 is

separately available for three oxide

thicknesses: 50 run (2530-1), 100 nm

(2530-2), and 200 nm (2530-3).

This SRM was developed to respond to

industry needs to evaluate the accuracy

of ellipsometers , but may also be used

as aid in the calibration of various

other optical and mechanical thickness

monitoring instruments.

Each SRM consists of a 7 6 -mm (3-in.)

diameter silicon wafer on which a

uniform silicon dioxide layer was grown,

patterned, and partially covered with

chromium. The certified values were

determined from measurements made using

the highly accurate ellipsometer

developed in the Division and are the

ellipsometric parameters delta, A, and

psi, at a wavelength of X = 632.8 nm.

The SRMs are also certified for the

derived values of thickness and

refractive index of its silicon dioxide

layer determined by using a two- layer

model consisting of a silicon dioxide

layer on a thin silicon-rich oxide

interlayer. [Contact: George A.

Candela, (301) 975-2086]

1988 CEEE Calendar

September 12-14, 1988 (San Jose, CA)

VLSI and GaAs Chip Packaging Workshop.

This Workshop is co-sponsored by the

Components , Hybrids , and Manufacturing

Technology Society of IEEE and NBS;

attendees are expected to be knowledgeable in the field and to participate in

discussions. Topic areas include: VLSI

and wafer-scale package design (characterization and implementation, cost and

performance -driven solutions) ; package

thermal design (characteristics,

results, and issues); package interconnection options (wire bonding, TAB, flip

chip, or optical); GaAs IC packaging

(high-speed packaging considerations);

package electrical issues (reduction of

parasitics, improvements in electrical

performance, reduction in line resistance) ; integrating package design

(from die to system, including assembly

and test issues); VLSI package materials

advancements; die-attach solutions for

large chips; and new failure mechanisms

in VLSI packaging. [Contact: George G.

Harman, (301) 975-2097]

September 20-21, 1988 (Boulder, CO)

Symposium on Optical Fiber Measurements.

This symposium is intended to provide a

forum for the lightwave communications

community to discuss and possibly

resolve measurement problems related to

optical fiber, sources, detectors,

switches , couplers , modulators , and

other components. The symposium is

sponsored by NBS , in cooperation with
CEEE Technical Publication Announcements - September 1988 Page 13

CEEE Events (cont'd.)

the Institute of Electrical and

Electronics Engineers' Optical Communications Committee, and the Optical

Society of America. Eight technical

sessions are scheduled, including

presentations relating to optical timedomain reflectometry return loss,

polarization, losses, transmission

modes, cut-off wavelength, geometry, and

refractive index. [Contact: Douglas L.

Franzen, (303) 497-3346]

October 26-28, 1988 (Boulder, CO)

Twentieth Symposium on Optical Materials

for High Power Lasers (Boulder Damage

Symposium). In addition to the NBS,

this symposium is sponsored by the

American Society for Testing and

Materials, the Air Force Office of

Scientific Research, the Office of Naval

Research, the Defense Advanced Research

Projects Agency, and the Department of

Energy. It serves as the principal

forum for the exchange of information on

the physics and technology of materials

for high-power lasers. Topics to be

discussed include new materials, bulk

damage phenomena, surface and thin- film

damage, design considerations for highpower systems, and fundamental mechanisms of laser- induced damage.

[Contact: Aaron A. Sanders, (303) 497-

5341]

February 7-9, 1989 (San Diego, CA)

IEEE Semiconductor Thermal and Temperature Measurements Symposium. This

fifth annual SEMI-THERM symposium is

sponsored by the Components, Hybrids,

and Manufacturing Technology Society of

IEEE in cooperation with NBS and

constitutes an international forum for

the presentation of new developments

relating to generation and removal of

heat within semiconductor devices

,

measurement of device temperatures , and

the simulation of device and system

thermal behavior. Major SEMI-THERM

topic areas include: thermal measurements; simulation, computation, and

software; thermal characterization; and

applications

.

The program includes keynote speakers,

technical presentations, tutorial

sessions, workshops, and an exhibit. In

addition, the Semiconductor Equipment

and Materials Institute (SEMI) and the

Joint Electron Devices Engineering

Council (JEDEC) have scheduled in

conjunction with SEMI -THERM several

Standards Committee Task Force meetings

,

to which attendees are invited.

[Contact: Frank F. Oettinger, (301)

975-2054]

September 11-13, 1989 (Munich, FDR)

VLSI and GaAs Chip Packaging Workshop

.

[Contact: George G. Harman, (301) 975-

2097]

December 7-8, 1989 (Gaithersburg, MD)

Power Semiconductor Devices Workshop

.

[Contact: David L. Blackburn, (301)

975-2068]

CEEE SPONSORS

National Institute of Standards and

Technology

U.S. Air Force

Newark Air Force Station; Rome Air

Development Center; Space & Missile

Organization; U.S. Air Force

Headquarters; Wright-Patterson AFB;

Technical Applications Center; Kirtland

AFB; Cryptological Support Center

U.S. Army

Fort Belvoir; Fort Monmouth; Fort

Huachuca; Harry Diamond Laboratory;

Materials & Mechanics Research Center;

Redstone Arsenal; Strategic Defense

Command; AVRADCOM (Aviation)

Department of Commerce

Patent and Trademark Office

Department of Defense

Defense Nuclear Agency; Defense

Advanced Research Projects Agency;

National Security Agency; Combined

Army/Navy/Air Force Calibration

Coordination Group

Department of Energy
Page 14

CEEE Sponsors (cont'd.)

CEEE Technical Publication Announcements - September 1988

Energy Systems Research; Fusion

Energy; High Energy & Nuclear Physics;

Bonneville Power Administration

Department of Justice

Law Enforcement Assistance

Administration

U.S. Navy

Naval Ocean Systems Center; Weapons

Support Center/Crane; Office of Naval

Research; Naval Sea Systems Command;

Naval Postgraduate School; Naval Ship

Research Development Center; Naval Air

Systems Command; Naval Research

Laboratory; Aviation Logistics

Center/Patuxent; Naval Explosive

Ordnance

National Aeronautics & Space

Administration

Goddard Space Flight Center; Lewis

Research Center

Nuclear Regulatory Commission

Department of Transportation

National Highway Traffic Safety

Administration

Sandia National Laboratories
S.1T4A 1REV. 2«8C

)

U.S. DEPT. OF COMM.

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1. PUBLICATION OR

REPORT NO.

2. Performing Organ. Report No. 3. Publication Date

NISTIR 88-3854 September 1988

TITLE AND SUBTITLE

Center for Electronics and Electrical Engineering Technical Publication Announcements

Covering Center Programs, January to March 1988, with 1988 CEEE Events Calendar

AUTHOR(S)

E. J. Walters, compiler

PERFORMING ORGANIZATION (If joint or other than N BS, see instructions)

NATIONAL BUREAU OF STANDARDS

U.S. DEPARTMENT OF COMMERCE

GAITHERSBURG, MD 20899

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S. Type of Report & Period Covered

. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City. State, ZIP)

U.S. Department of Commerce

National Institute of Standards and Technology

National Engineering Laboratory

Center for Electronics and Electrical Engineering

I. SUPPLEMENTARY NOTES

All technical information included in this document has been previously approved for

publication.

J Document describes a computer program; SF-185, FIPS Software Summary, is attached.

L. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bibliography or literature survey, mention it here)

This is the sixteenth issue of a quarterly publication providing information on the

technical work of the National Institute of Standards and Technology (formerly the

National Bureau of Standards) Center for Electronics and Electrical Engineering.

This issue of the Center for Electronics and Electrical Engineering Technical Publication Announcements covers the first quarter of calendar year 1988. Abstracts are provided by technical area for papers published this quarter.

2. KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolon s) antennas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers; semiconductors; superconductors

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KEY CONTACTS:

Center Headquarters (720) Director, Mr* Judson C. French (301) 975-2220

Deputy Director, Mr. Robert L Scace (301) 975-2220

Electrosystems Division (722) Chief, Dr. Oskars Petersons (301) 975-2400

Electromagnetic Fields Division (723) Chief, Dr. Ramon C. Baird (303) 497-3131

Electromagnetic Technology Division (724) Chief, Dr. Robert A. Kamper (303) 497-3535

Semiconductor Electronics Division (727) Chief, Mr. Frank F. Oettinger (301) 975-2054

INFORMATION:

For additional Information on the Center for Electronics and Electrical Engineering, write or call:

Center for Electronics and Electrical Engineering

National Institute of Standards and Technology

Metrology Building, Room B-358

Gaithersburg, MD 20899

Telephone (301) 975-2220