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Center for Electronics and

Electrical Engineering

Technical

Publication

Announcements

Covering Center Programs,

April - June 1985 with

1986 CEEE Events Calendar

January 1986

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899

1986
INTRODUCTION TO THE CEEE TECHNICAL PUBLICATION ANNOUNCEMENTS

This is the fifth issue of a quarterly publication providing information on the technical work of the National Bureau of Standards Center for Electronics and Electrical

Engineering. Ihis issue of the CEEE Technical Publication Announcements covers the

second quarter of calendar year 1985.

Organization of Bulletin ; Ihis issue contains citations and abstracts for Center

papers published in the quarter. Entries are arranged by technical topic as identified in the table of contents and alphabetically by first author within each topic.

Following each abstract is the telephone number of the individual to contact for more

information on the topic; unless otherwise noted, this person is the first author.

This issue also includes a calendar of Center conferences and workshops now planned

for calendar year 1986, an announcement of recently issued standard reference materials, and a list of sponsors of the work.

Center for Electronics and Electrical Engineering ; Center programs provide national

reference standards, measurement methods, supporting theory and data, and traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U.S. conpeti tiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. Ihese metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor Technology Program, carried out by the Semiconductor Electronics Division (formerly the

Semiconductor Materials and Processes and Semiconductor Devices and Circuits

Divisions) in Gaithersburg, MD, and the Signals and Systems Metrology Program,

carried out by the Electrosystems Division in Gaithersburg and the Electromagnetic

Fields and Electromagnetic Technology Divisions in Boulder, CO. Key contacts in the

Center are given on the back cover; readers are encouraged to contact any of these

individuals for further information.

Center sponsors : The Center Programs are sponsored by the National Bureau of Standards and a number of other organizations, in both the Federal and private sectors;

these are identified on page 9.

Note on Publication Lists : Guides to earlier as well as recent work are the publication lists covering the work of each division. These lists are revised and reissued on an approximately annual basis and are available from the originating division.
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CEEE Technical Publication Announcements - January 1986

TABLE OF CONTENTS

Page 1

6- *

INTRODUCTION inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM

Analysis Techniques 2 Gallium Arsenide Materials 2 Power Devices 2 Integrated Circuit Test Structures 2 Process and Device Modeling 3 Radiation Effects 3

SIGNALS AND SYSTEMS METROLOGY PROGRAM

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 4

Cryoelectronic Metrology 4

Antenna Metrology 4

Other Fast Signal Topics 4

ELECTRICAL SYSTEMS 5 Power Systems Metrology 5 Superconductors . 5 Magnetic Materials and Measurements .... 6

Other Electrical Systems Topics 7

1986 CEEE CALENDAR 7 RECENTLY ISSUED STANDARD REFERENCE MATERIALS 8

CEEE SPONSOR LIST 9

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 2 CEEE Technical Publication Announcements - January 86

SEMICONDDCTOR TECHNOLOGY PROGRAM

Analysis Techniques

Forman, R. A., and Mayo, S«, In Situ

Alignment for X-Ray Topography, J. Appl. Crystallography, Vol. 18, pp.

1 06-1 09 (1985)

.

A simple method for in situ alignment of

samples in a double-crystal x-ray topography system is described. This method

permits a specific crystallographic axis

to be made coincident with the sample

rotation axis used to set the Bragg

angle. Surface reflections from approximately orthogonal crystallographic

planes are required, and tables of such

planes suitable for alignment of cubic

crystals are given. This procedure

allows rapid setup for the other accessible surface reflection or trananission

topographs.

[Contact: (301) 921-3786]

Gallium Arsenide Materials

Imhoff, E.A., Bell, M.I., and Forman,

R.A., Hot Photolumlnescence in Beryllium-Doped Gallium Arsenide, Solid

State Communications, Vol. 54, No. 10,

pp. 845-848 (1985).

Hot photoluminecence in GaAsiBe is re- ported for the first time. The emission

from a sample with p = 6.5 x 10^^ cm”^

at 10 K consists of a shoulder at 1.803

± 0.002 eV followed by a series of broad

peaks at 1.781, 1.742, 1.704, 1.666, and

1.628 eV (all ±0.003 eV) . Analysis of

the results supports a decay model involving hot electron-acceptor recombination and implies an L-F splitting of

320 ± 4 meV in the conduction band at

0 K.

[Contact: Michael I. Bell, (301)

921-3786]

Power Devices

Blackburn, D.L., TUrn-0££ Failure of

Power NOSFETs, Proceedings of the

1985 IEEE Power Electronic Specialists

Conference, Toulouse, France, June

24-28, 1985, pp. 429-435.

Experimental results of the failure of

power MOSFETs during turn-off are discussed. It is shown that the electrical

characteristics of these devices during

failure are identical to those of a bipolar transistor undergoing second

breakdown. Other comparisons of the

power MOSFET failure and bipolar second

breakdown are made. A nondestructive

measurement system is used allowing

repeated measurements of the failure

characteristics as a function of various

parameters to be made on single devices.

It is shown that practical, commercial

power MOSFETs do not fail as a result of

dV(DS)/dt currents. Drain voltage slew

rates up to 22 V/ns were studied. Other

measurements show that the drain voltage

at which failure occurs increases with

temperature, the critical current above

which failure occurs decreases with

temperature, and the magnitude of the

load inductance has no effect on the

failure. The results of this study are consistent with the theory that activation of the parasitic bipolar transistor

initiates the power MOSFET failure.

[Contact: (301) 921-3621]

Integrated Circuit Test Structures

Roenker, K.P., Harner, B.L. , and Linholm, L.W., An HMOS Test Chip for

Instruction in Semiconductor Parzuneter

Measurements, Proceedings of the

Sixth Biennial University/Government/

Industry Microelectronics Symposium,

Auburn, AL, June 1 1-1 3, 1985, pp.

100-105.

This paper describes an NMOS test chip,

NBS-40, designed for use in a graduatelevel course in the measurement of semiconductor parameters using test structures. The rationale and objectives of

a parameter measurements course are discussed and the organization and re- sults of a course offered at the University of Cincinnati are described. The

teat chip layout and test structures are briefly described and parameter measurements using the test structures are
CEEE Technical Publication Announcements - January 86 Page 3

IC Test Structures y cont'd.

discussed. An NBS technical report

describing the test chip has been prepared and is available as a student

reference. Examples of recent measurement results obtained on chips fabricated through the MOSIS service are provided to demonstrate the functionality of the chip.

[Contact: Loren W. Linholm, (301)

921-3801]

Schafft, H.A., Grant, T.C., Saxena,

A.N., and Kao, C.Y. , Electromigration

and the Current-Density Dependence,

Proceedings of the International

Reliability Physics Symposium, Orlando,

FL, March 26, 1985, pp. 93-99.

The empirical expression used to predict

metallization resistance to electromigration failure involves the current

density to a power of n. A value for n of 1.5 was obtained from stressing un- passivated Al-1% Si metallization test

structures over a range of current densities of from 0.5 to 2.5 MA/cm^, The

steps taken to ensure an accurate estimate of the metallization stress conditions of temperature current density to

obtain this value are described in detail.

[Contact: (301) 921-3801]

Process and Device Modeling

Bennett, H.S., Band Structure and

Density of States Changes for Doped

Gallium Arsenide, paper in NBS

Special Publication 697, OM85, Basic

Properties of Optical Materials, Summaries of Papers [given at the Topical

Conference, Gaithersburg, MD, May 7-9,

1985], pp. 194-197 (April 1985).

Optical absorption measurements on doped

GaAs are interpreted in terms of distorted band structures. Such data provide values for the many-body interactions which are essential in calculations on the operation of lasers and

opto-electronic devices.

[Contact: (301) 921-3621]

Wilson, C.L., and Blue, J.L. , Semiconductor Measurement Technology;

MOS1 : A Program for Two-Dimensional

Analysis of Si NOSFETs, NBS Special

Publication 400-77 (April 1985).

The MO SI program is a portable FORTRAN

77 program suitable for analysis of

currents and fields in VLSI devices.

The program solves three coupled non- linear elliptic partial differential

semiconductor device equations in two

dimensions. Historically, these equations have been solved using a specialpurpose program and batch runs on a large, fast computer. We use a generalpurpose program which runs on a large

minicOTiputer or scientific workstation.

This report discusses the physical formulation of the semiconductor equations

and the methods used to select the solution strategy.

[Contact; (301) 921-3621]

Radiation Effects

Gallcway, K.F., Wilson, C.L., and Witte,

L.C., MOSFET Electrical Parameter

Extraction from C3iarge-Sheet Model

Fitting, Proceedings of the Sixth

Biennial University/Government/ Indus try

Microelectronics Symposium, Auburn, AL,

June 11-13, 1985, pp. 77-81.

A method for extracting the flatband

voltage and the channel mobility from

the current-voltage (I-V) characteristics of long-channel MOSFETs is described. The one-dimensional chargesheet model developed by Brews provides

the basis for the I-V characteristics.

The I-V characteristics given by this

model are optimized with respect to a set of experimental data with the flatband voltage and the mobility the only

free parameters. A computer program,

CSFIT, has been developed for this purpose. The choice of parameters is usually appropriate for a device subjected

to a stress condition (e.g., hot-carrier

injection or ionizing radiation). To

illustrate the application of this method and CSFIT, the flatband voltage and

mobility for an n-channel enhancement-
Page 4 CEEE Technical Publication Announcements - January 86

Radiation Effects ^ cont'd.

mode device subjected to ionizing radiation are determined from the I-V curves and the changes of these parameters with

radiation dose are tracked.

[Contact; (301) 921-3541]

FAST SIGNAL ACQUISITION, PROCESSING, AND

TRANSMISSION

Cryoelectronic Metrology

Zimmerman, J.E., Design of Cryocoolers

for Microwatt Superconducting Devices,

Proceedings of the Third Cryocooler

Conference, Boulder, CO, September

17-18, 1984, pp. 2-9, NBS Special Publication 698 (May 1985).

The primary applications of the cryocoolers considered here are for cooling

various Josephson devices such as SQUID

magnetometers and amplifiers, voltage

standards, and microwave mixers and

detectors. The common feature of these

devices is their extremely low inherent

bias power requirement, of the order of

10“^ W (or sometimes much less) per

junction. This provides the possibility, not yet fully exploited, of designing compact, low-power cryocoolers for

these applications, the design criteria

being totally different from those of

any cryocoolers presently available.

Several concepts have been explored and

a number of laboratory model cryocoolers

have been built. These include lowpower non-magnetic regenerative machines

of the Stirling or Gif ford-McMahon type,

three- or four-stage Joule-Thomson machines, liquid-helium dewars with integral small cryocoolers to reduce the

evaporation rate, and liquid-helium

dewars with integral continuously or intermittently operated small helium

liquefiers to permit operation of cryogenic devices for indefinite time

periods.

[Contact: Richard L. Harris, (303)

497-3901]

Antenna Metrology

Kanda, M. , Transients in a Resistively

Loaded Loop Antenna, Proceedings of

the 1984 International Symposium on Electromagnetic Compatability [IEEE EMC

Society], Tokyo, Japan, October 16-18,

1984, pp. 286-290.

Transient characteristics of a loop

antenna loaded uniformly with a resistive material are analyzed. The current

distribution of the antenna is obtained

by the use of the Fourier series expansion technique. It is found that the

distortion of the transient waveforms

due to a resonance of a loop antenna can

be reduced and the received transient

waveforms can be tailored by resistive

loadi ng.

[Contact: (303) 497-5320]

Other Fast Signal Topics

Capobianco, T.E. , and Fickett, F.R.,

Precision Measurement of Eddy Current

Coil Parameters, Proc. Review of

Progress in Quantitative NDE [paper

given at Conference, University of

California, San Diego, July 9-13,

1984] (Plenum Press, New York, 1985),

pp. 491-498.

Precision measurements of impedance,

phase angle, and dissipation factor of

both commercial eddy current coils and

specially prepared test coils by various

techniques are described. Special

emphasis is placed on use of the digital

storage oscilloscope and commercial

impedance (LCZ) meter. Detection of the

effect on the coil parameters of shorted

turns, deformation, and ferrite defects

is described.

[Contact: (303) 497-3641]

Leedy, T.F., An Approach to ATE Calibration Via Performance Verification at

the System Interface, Proceedings of

the 1985 Measurement Science Conference, Sunnyvale, CA, January 17-18,

1985, pp. 198-201.

A method of verifying the performance of

automatic test equipment (ATE) in its
CEEE Technical Publication Announcements - January 86 Page 5

Other Fast Signal Topics / cont'd.

normal operating environment and configuration is presented as the best approach to achieving an overall system

calibration. The method consists of the

transport of well-characterized signal

sources to the ATE station and the application of these electrical stimuli

directly to a well-defined electrical

interface on the test station. Data are

presented on typical accuracies that

have been obtained on limited parameters

and ranges during the testing process,

using calibrated commercial equipnent.

[Contact; (301) 921-2727]

Sorrells, J.R., Palla, J.C., Meiselman,

B., and Oravec, B.A., Electrical and

Electronic Metrology: A Bibliograj^y

of NBS Electrosystems Divisicm's Publications, NBS List of Publications 94

(March 1 985) .

This bibliography lists the publications

of the Electrosystems Division, Center

for Electronics and Electrical Engineering, NBS, and of its predecessor sec- tions for the period January 1968 to

March 1984. A brief description of the

Division's technical program is given in

the introduction.

[Contact: (301) 921-2727]

ELECTRICAL SYSTEMS

Power Systems Metrology

Hebner, R.E. , Kelley, E.F., Forster,

E.O., and Fitzpatrick, G.J. , Observation of Prebreakdown and Breakdown

Phencmena in Liquid Hydrocarbons II.

Non-Uniform Field Conditi<»s, IEEE

Transactions on Electrical Insulation,

Vol. EI-20, No. 2, pp. 281-292 (April

1 985) .

The prebreakdown and breakdown processes

have been recorded in n-hexane toluene

and Marcol 70, both in a pure state and

with selected impurities. Ihe study was carried out using a point-plane geometry. A low ionization potential additive had only a small effect on the

breakdown voltage or the streamer propagation speed but did significantly alter

the shape of the prebreakdown streamer

when the needle was positive, i.e., an

anode. For a negative needle (cathode),

chemical impurities affected the breakdown voltage. Ihe significance of these

findings is discussed in detail.

[Contact: (301) 921-3121]

Van Brunt, R.J. , Production Rates for

Oxyfluorides SOF2^ SO^F^, and SOF^^ in

SFg Corona Discharges, NBS Journal of

Research, Vol. 90, No. 3, pp. 229-253

(May-June 1985).

Ihe most abundant, long-lived stable

gaseous species generated by corona

discharges in SFg gas containing trace

levels of O

2 and H2 O are the oxyfluorides SOF

2

, SO

2F2

, and SOF^. Absolute

energy and charge r a tes-of -product!on of

these and the minor products SO

2

, OCS,

and CO2 have been measured at different

total gas pressures from 100 kPa to 300

kPa and for discharges of different

current, power, and polarity. Oxyfluoride yields for SFg /02 mixtures containing up to 10% O

2 have also been measured. Ihe results indicate that oxyfluoride production is not controlled by

the concentrations of either ©2 or H

2 O

at levels belcw about 1%, and the rate

controlling factor is the dissociation

rate of SFg in the discharge. Ihe discharge current and time dependence of

the production rates are discussed in

terms of gas-phase mechanisms that have

been proposed to explain previous observations of electrical, thermal, and

laser-induced decomposition of SFg and

SFg /02 mixtures. Upper limits on the

total SFg decomposition rate in lowcurrent discharges have been estimated.

Details of the chemical analysis procedures are given, and application of the

results to the design of chemical diagnostics for SFg-insulated, high-voltage

apparatus is discussed.

[Contact: (301) 921-3121]

Superconductors

Fickett, F.R., Standards for Measure-
Page 6 CEEE Technical Publication Announcements - January 86

Superconductors , cont'd.

ment o£ the Critical Fields of Superconductors, NBS Journal of Research,

Vol. 90, No. 2, pp. 95-113 (March-April

1 985) .

The origins, definitions, and measure- ment of the various critical magnetic

fields associated with superconductors

are reviewed. Ihe potential need for an

ASTM-type standard for the measurement

of these fields is discussed. Measurement techniques as practiced both in

industry and in the national laboratories are reviewed. Extrapolation techniques commonly used to determine the

upper critical fields of the newer materials are evaluated as to their suitability for various applications.

Sources of error in the experimental

determination of critical fields are assessed for the various common techniques. A conprehensive bibliography of

the modern literature on critical field

measurement and interpretation is included.

[Contact: (303) 497-3785]

Goldfarb, R.B., and Clark, A.F., Hysteretic I.osses in Nb-Ti Superconductors, J. Appl. Phys. , Vol. 57, No. 1,

pp. 3809-381 1 (15 April 1985).

When subjected to transient magnetic

fields, superconductors exhibit losses.

At low frequencies, most of the dissipation is hysteretic. Magnetization was measured in an axial field for eight

multifilamentary Nb-Ti superconducting

wires with different filament sizes and

different ratios of copper to superconductor. The full-penetration field Hp was estimated from the high-field ends

of the hysteresis loops. The estimate

of Hp provides a method to assess the

critical current density J^,. There

was good agreement between measured

losses and those predicted from Hp and

the peak applied field.

[Contact; (303) 497-3650]

Goldfarb, R.B., and Clark, A.F., Magnetic Hyeteresle and Complex Susceptibility as Mecisures of AC Losses in a Multifilamentary HbTi Superconductor,

IEEE Transactions on Magnetics, Vol.

MAG-21, No. 2, pp. 332-335 (March

1985)

Magnetization and ac susceptibility of a standard NbTi superconductor were mea- sured as a function of longitudinal dc

magnetic field. The ac-field-ampli tude

and frequency dependences of the complex

susceptibility are examined. The magnetization is related to the susceptibility by means of a theoretical derivation based on the field dependence of

the critical current density. Hysteresis losses, both obtained directly from

dc hysteresis loops and derived theoretically from ac susceptibility and critical current density, were in reasonable

agreement.

[Contact: (303) 497-3650]

Magnetic Materials and Measurements

Fickett, F.R., and Capobianco, T.E.,

Magnetic Field Mapping with a SQUID

Device, Proc. Review of Progress in

Quantitative NDE, Vol. 4A (Plenum

Press, New York, 1985), pp. 401-410.

[paper given at Conference, University

of California, San Diego, July 9-13,

1984]

Results of tests applying a SQUID

(superconducting quantum interference

device) system to measurement of the

magnetic near field of commercial eddy

current coils are reported. The SQUID

system offers some significant advantages over more conventional techniques

in that very small coils can be used and

the calibration of the system is tied to

the quantum of flux.

[Contact: (303) 497-3785]

Goldfarb, R.B., Rao, K.V. , and Chen,

H.S., Differences Between Spin

Glasses and Ferroglassest Pd-Fe-Si,

Solid State Communications, Vol. 54,

No. 9, pp. 799-801 (1985)

Near the raulticritical point in the

magnetic phase diagram, some alloys that
CEEE Technical Publication Announcements - January 86 Page 7

Magnetic Materials & Meas

^ cont'd.

appear to be simple spin glasses actually have an intermediate f erro-magneticlike state between the high-temperature

paramagnetic and low-temperature spinglass states. The temperature dependences of the imaginary component of ac susceptibility and dc magnetization

are presented to illustrate the subtle

experimental differences between spin

glasses and these f erroglasses.

[Contact: (303) 497-3650]

Other Electrical Systems Topics

Recently Published

Sorrells, J.R., Palla, J.C., Meiselman,

B., and Oravec, B.A., Electxical and

Electronic Metrology: A Bibliografdty

of NBS Electrosystems Division's Publications, NBS List of Publications 94

(March 1985) .

This bibliography lists the publications

of the Electrosystems Division, Center

for Electronics and Electrical Engineering, NBS, and of its predecessor sec- tions for the period January 1968 to

March 1984. A brief description of the

Division's technical program is given in

the introduction.

[Contact: (301) 921-2727]

1986 CEEE CALENDAR

January 27-31 (San Jose, CA)

The Fourth International Symposium on

Semiconductor Processing. This Symposiun is presented by American Society

for Testing and Materials Committee F-1

on Electronics, the National Bureau of

Standards, the Semiconductor Bguipnent

and Materials Institute, Stanford University Center for Integrated Systems,

and the Components, Hybrids, and Manufacturing Technology Society of the

American Institute of Electrical and

Electronics Engineers. Technical areas

to be covered include crystal growth and

material preparation technology, fabrication processes, lithography and patterning, interconnects and silicides,

material and process characterization,

measurement and control of contaminants

introduced during fabrication and particulates, equipment technology and

automation, and manufacturing control

systems to achieve improved product

quality. Special in-depth sessions are

also planned on the state of the art in

dopant profiling techniques.

[Contact: Dinesh C. Gupta (Siliconix)

(408) 988-8000]

February 17-18, 1986

IEEE VLSI Workshop on Test Structures.

The IEEE Electron Devices Society is

sponsoring a Workshop intended to bring

together the designers and users of test

chips to discuss new developments in

microelectronic test chip/test structure

research, implementation, and application. The Workshop will present papers

covering such topics as: material and

process characterization and diagnostics; device and circuit characterization; yield and reliability assessment;

test structure utilization, data analysis, and data management; and advances

in test equipment. Workshop proceedings

will be pxiblished.

[Contact: Loren W. Linholm, (301)

921-3801]

March 5-7 (Gaithersburg, MD)

Workshop on Measurement of Electrical

Quantities In Pulse Power Systems - 11.

This Workshop is intended to disseminate

information on modern measurement techniques, define the state of the art of

measurement of electrical quantities in

pulse power systems, and identify areas

in which improvements in measurements

are required. Papers are planned for

the following three areas: (1 ) vol’nij. , current, power, and energy measurement , including conventional and electro

optical techniques, beam and radiati-..

methods, software corrections and modeling; (2) data acquisition and pr ' -
Page 8 CEEE Technical Publication Announcements - January 86

1 986 CEEE Calendar , cont'd.

ing, including signal transmission,

electro-optical links, electromagnetic

interference and noise suppression, data

recording, and diagnostics for large

systems; and (3) calibration methods for

laboratory and machine use. The Workshop proceedings will be published.

[Contact: John R. Sorrells, (301)

921-2727 or Ronald H. McKnight, (301)

921-31 21]

April 22-23 (Gaithersburg, MD

)

Workshop on Test Procedures for Precision Instrumentation and ATE Systems.

This Workshop is intended to provide a forum for the exchange of information

among researchers, users, manufacturers,

testing companies, and calibration laboratories on the procedures used in testing the performance of precision instrumentation and automatic test equipment

systems. Technical topics planned include first-article and acceptance testing, bid-sample testing, maintenance and

calibration testing, developing and

writing specifications and procedures,

"minimum-use" specifications, test accuracy ratios, economic tradeoffs of testing, case histories of specific test

programs, optimum calibration strategies, and recommended practices. The

Workshop proceedings will be published

by the Institute of Electrical and Electronics Engineers.

[Contact: John R. Sorrells, (301)

921-2727J

June 23-27 (Gaithersburg, MD)

1986 CPEM (Conference on Precision Electromagnetic Measurements) . CPEM 86 is

being sponsored by the U. S. National

Bureau of Standards, the IEEE Instrumentation and Measurement Society, and the

Union Radio Scientifique Internationale.

The Conference will present papers cov- ering the theory, design, performance,

simulation, and application of electromagnetic standards, measurements, techniques, instruments, and systems. Sessions are tentatively planned to cover

the following technical areas: electromagnetic-related fundamental constants

and standards; direct current, low frequency, and radiofrequency; time, time

interval, and frequency; antennas and

fields; microwaves and millimeter waves;

infrared, visible, and ultraviolet radiation; lasers; electro-optics and fiber

optics; cryoelectronics; automated measurements; and technical calibration

services. The Conference language will

be English. [Contact: Sara Torrence,

(301) 921-2721. (For technical information, contact John R. Sorrells, (301)

921-2727 or Norman B. Belecki, (301)

921-2715. ) ]

RECENTLY ISSUED

STANDARD REFERENCE MATERIALS

The first practical superconducting

standard reference material (SRM) has

been released by the Electromagnetic

Technology Division to the NBS Office of

Standard Reference Materials for sale to

the public. The certified parameter of

SRM 1457, Superconducting Critical Current — NbTi Wire, is critical current

at magnetic fields of 2,4,6, and 8 tesla

at a temperature of 4.2 K and an electric field criterion of 0.2 yV/cm.

Information is given to permit the user

to determine critical current for temperatures in the range 3.90 to 4.24 K

and electric field criteria from 0.05 to

0. 2 pV/cm.

SRM 1457 consists of a 2.2-m length of a multif ilimentary , niobium- titanium,

copper-stabilized wire, wound in a single layer on a spool having a core diameter of 8.7 cm. The wire is evaluated

for 34 parameters relating to current,

voltage, magnetic field, temperature,

strain, and physical specimen characteristics.

In conjunction with ASTM Standard Test

Method B714-82, D-C Critical Current of

Composite Superconductors, the new SRM

is intended to provide means for cali-
CEEE Technical Publication Announcements - January 86 Page 9

Recently Issued SRMS / cont'd.

brating apparatus used to measure key

parameters of superconductor products

and tnus should be useful to buyers and

sellers of superconductors, users of

superconducting equipment, and researchers in superconducting technology .

CEEE SPONSORS

National Bureau of Standards

Department of Commerce NOAA

Department of Defense

Defense Advanced Research Project

Agency; Combined Army/Navy/Air Force

Calibration Coordination Group;

Defense Nuclear Agency; National

Security Agency

U.S. Air Force

Bolling Air Force Base; Hanscom

Air Force Base; Newark Air Force

Station; Rome Air Development Center;

Space Division; Wright-Patterson Air

Force Base

U.S. Army

Aberdeen Proving Ground; Aviation

Research and Development Command;

Fort Monmouth; Harry Diamond

Laboratories; Fort Belvoir;

Redstone Arsenal; Materials and

Mechanics Research Center

U.S. Navy

Aviation Logistics Center (Patuxent

River); Naval Air Systems Command;

Naval Surface Weapons Center; Naval

Weapons Support Center (Crane);

Office of Naval Research; Naval

Research Laboratory

Department of Energy

Ehergy Systems Research; Fusion

Biergy; Bonneville Power

Administration

Department of Justice

Law Enforcement Assistance

Administration

Charles Stark Draper Laboratory

Electronics Industries Association

Food and Drug Administration

Hughes Aircraft Company

International Copper Research

Association

International Telecommunications

Satellite Organization

Massachusetts Institute of Technology

Sandia National Laboratories

University of California Los Alamos

Scientific Laboratory
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NBS-114A 'REV. 2-ao) U.S. DEPT. OF COMM. 1. PUBLICATION OR

REPORT NO.

2. Performing Organ. Report No. 3. Publication Date BIBLIOGRAPHIC DATA

SHEET (See Instructions) NBSIR-86/3310 January 1986

4. TITLE and subtitle

Center for Electronics and Electrical Engineering Technical Publication Announcements

Covering Center Programs, April-June 1985 with 1986 CEEE Events Calendar

5. AUTHOR(S)

E. Jane Walters, compiler

6. PERFORMING ORGANIZATION (If joint or other than MBS. see instructions)

national bureau of standards

DEPARTMENT OF COMMERCE

WASHINGTON, D.C. 20234

7. Contract/Grant No.

8. Type of Report & Period Covered

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street, City. State, ZIP)

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

10. SUPPLEMENTARY NOTES

All technical information included in this document has been previously approved for

publication.

I I Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bibliography or literature survey, mention it here)

This is the fifth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. This issue of the Center for Electronics and Electrical

Engineering Technical Publication Announcements covers the second quarter of

calendar year 1985. Abstracts are provided by technical area for papers published

this quarter.

12. KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolons)

antennas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrxmentation; laser; magnetics; microwave; optical fibers;

semiconductors ; superconductors

13. AVAILABILITY

|X^ Unlimited

I I For Official Distribution. Do Not Release to NTIS

r

"? Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C.

20402.

Order From National Technical Information Service (NTIS), Springfield, VA. 22161

14. NO. OF

PRINTED PAGES

13

15. Price

$9.95

USC0MM*0C
UA. DEPARTMENT OP COMMERCE

NattonM Butmu of Standardt

Gaithersburg, Md. 20899

OFFICIAL BUSINESS

Penalty for Private Use. $300

BULK RATE

POSTAGE & FEES PAH)

NBS

PERMIT No. G195

KEY CONTACTS; Cantor Headquarters (720) Director, Mr. Judaon C. French (301) 921-3357

Deputy Director, Mr. Robert I. Scace (301) 021-3357

Electrosystems Division (722) Chief, Dr. Oskars Petersons (301) 021-2328

Electromagnetic Fields Division (723) Chief, Mr. Charles K.S. Miller (303) 407-3131

Electromagnetic Technology Division (724) Chief, Dr. Robert A. Kamper (303) 407-3535

Semiconductor Electronics Division (727) Chief, Dr. Kenneth F. Galloway (301) 021-3541

INFORMATION:

For additional Information on the Center for Electronics and Electrical Engineering, write or call:

Center for Electronics and Electrical Engineering

National Bureau of Standards

Metrology Building, Room B-356

Gaithersburg. MD 20899

Telephone (301) 921-3357