NBS

PUBLICATIONS

NBSIR 80-2057

The NBS Semiconductor Technology

Program and VLSI

A11105 131215

W. Murray Bullis and R. I. Scace

Electron Devices Division

Center for Electronics and Electrical

Engineering

National Engineering Laboratory

National Bureau of Standards

U S. Department of Commerce

Washington, DC 20234

June 1980

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THE NBS SEMICONDUCTOR TECHNOLOGY

PROGRAM AND VLSI

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W. Murray Bullis and R. I. Scace

Electron Devices Division

Center for Electronics and Electrical

Engineering

National Engineering Laboratory

National Bureau of Standards

U S. Department of Commerce

Washington, DC 20234

June 1980

U.S. DEPARTMENT OF COMMERCE, Philip M. Klutznick, Secretary

Luther H. Hodges, Jr., Deputy Secretary

Jordan J. Baruch, Assistant Secretary for Productivity. Technology, and Innovation

NATIONAL BUREAU OF STANDARDS, Ernest Ambler, Director
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The NBS Semiconductor Technology Program and VLSI

W. M. Bullis and R. I. Scace

Electron Devices Division

National Bureau of Standards

Washington, DC 20234

1 . Past Programs

Metrology has been a significant factor in the advancement of the semiconductor device industry. Understanding and control of both dimensional

characteristics and materials properties have been essential in the development, design, and production of transistors and integrated circuits since

their invention. The trend to very large scale integration (VLSI) increases

the metrological requirements associated with each of these areas.

The National Bureau of Standards (NBS), as the Nation's research laboratory for measurements and physical standards, has been concerned with measurements for semiconductor materials and devices since about 1960. 2 From

the start, this activity has been very selective; research projects have been

chosen and carried out on the basis of close interactions with the producing

industry, its suppliers, and users in other Federal agencies and in the private sector. Early projects on silicon resistivity and transistor secondbreakdown measurements have expanded to become the Semiconductor Technology

Program which covers a broad spectrum of research activity on techniques for

characterizing electronic materials, including silicon and other semiconductors, insulator films, metal interconnects, process chemicals, and resists;

and techniques for measuring pattern dimensions, selected electrical and

thermal properties of devices, interconnection and die bond quality, package

integrity, and other critical quantities. The primary outputs of this program include improved measurement methods, prototype measuring instruments,

interpretive theory, and supporting data. It is important to emphasize that

it does not include development of new device designs, new processing or as- sembly techniques, or new manufacturing equipment, except as these may be an- cillary to the primary outputs.

This activity is carried out at the Washington complex of the NBS in the

Electron Devices Division which is a part of the Center for Electronics and

Electrical Engineering, one of the Bureau's 13 scientific and technical centers. Financial support for the work has come both from direct appropriations and from funds transferred by other Federal agencies, principally the

Departments of Defense and Energy and the National Aeronautics and Space Administration. Most of the Bureau's research is conducted in-house; in the

present program a significant fraction of the research that was funded by

ARPA was carried out by outside contractors during the late 1970s, but major

contract activity is not expected to continue into the future.

Among the early projects with the greatest impact on the semiconductor

industry are those concerned with the four-probe method for measuring resistivity of silicon slices,-* test methods for wire bonding, and thermal resistance measurements on power transistors. ^ Research on each of

these topics was undertaken in response to defined industrial needs as articulated by an industrial standards committee or by a concerned Federal agency.

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Identification of priorities for NBS work in this way is particularly important because NBS does not establish specifications, is not a major procuring

agency, and has no regulatory authority. The results of the work were implemented in many different ways which are typical of the diverse relationships

between the NBS program and the industry.

In the case of the resistivity work, which was undertaken in response to

a request from Committee F-1 on Electronics of the American Society for Testing and Materials, results were implemented in three phases. Early interim

results, such as geometric correction factors, data on the temperature coefficient of resistivity and specimen preparation techniques, were reported to

the Committee and in the literature as they were obtained. In this way, interested parties were able to incorporate the findings in their routine mea- surement procedures for both materials acceptance and process control before

the project was completed. As the work neared completion, the results were incorporated into an ASTM standard8 which became the referee method for the

industry and also into four other related ASTM standards. Finally, several

types of sets of silicon slices were certified as to their resistivity as measured in accordance with the ASTM method8 and issued as standard reference materials (SRMs) by NBS. 8 These SRMs continue to be useful reference

standards; although the industry is presently shifting from the four-probe

method to a contactless technique 10 for routine resistivity measurements,

the newer method requires the use of standards to provide calibration at several values of resistivity.

The wire-bond work was undertaken in response to the needs of a military

agency. The initial output was a new method for monitoring the ultrasonic

bonding process. 4 Use of this method together with a novel scanning electron microscope examination technique 1 1 led to greatly increased understanding of the process, to suggestions for improvements in bonding machine

design (many of which were incorporated by equipment makers through retrofits

or in next-generation machines and thus introduced painlessly into the device

manufacturing process), to a sound basis for the nondestructive pull test, ^

and to substantial improvements in productivity and in device and system re- liability. In this instance, the results were incorporated first on captive

lines operated in several companies on behalf of a major military system;

they then diffused through the industry and were eventually embodied in ASTM

standards 13 ' 14 and in the bond test methods of the military standards for

discrete devices 13 and integrated circuits. 18 The inter laboratory

test to evaluate the destructive pull test14 identified and led to the

solution of a variety of problems including a potential deficiency in a widely used automatic pull tester. 1 ^

The thermal resistance work was an outgrowth of the early work on second

breakdown in transistors. The project was carried out in close collaboration with various committees of the Joint Electron Devices Engineering Councils (JEDEC). The work led to identification of a preferred electrical test

method and its range of application which was issued as an Electronic Industries Association Recommended Standard 18 and incorporated in a military

standard. 18 The results of this work formed the basis for a commercial

thermal resistance test instrument and eventually led to a new method for determining the safe operating area of power transistors.

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2. Future Directions

Some of the more recent projects in the program relate directly to some

of the metrological requirements of VLSI. One critical requirement relates

to dimensional metrology of integrated circuit pattern features in the 0.5-

to 10-ym range on photomasks21 and wafers. 22 This work was undertaken

following an extensive industry survey22 which established the need for

linewidth measurements in this regime. Procedures have been developed for

making linewidth measurements on photomasks, SRMs are being made available to

the industry, and ASTM standards are under development. These procedures

have also been extended to patterns in very thin oxide layers on silicon; ex- tension to patterns in technologically more interesting layers greater than

0.2 ym thick is underway. In addition, the techniques are being transferred

to the industry in a series of training seminars which feature hands-on ex- perience with linewidth measuring systems loaned for the purpose by instrument manufacturers. From time to time, multi laboratory tests are conducted

to assess the state of the measurement art in this field.

Microelectronic test structures are device- like elements used to measure

selected critical material and process parameters by means of high-speed

electrical tests. 24 They are particularly important in connection with

design rule verification and in establishing, verifying, and controlling wafer fabrication processes. Work in this area was undertaken following both

extensive informal discussions with industry representatives and conduct of a workshop2 ^ held to provide a more formal channel for discussions on this

topic. A wide variety of structures have been investigated including a cross-bridge array for evaluation of pattern generators and step-and-repeat

cameras, a production-compatible potentiometric electrical alignment test

structure which has been shown to be sensitive to misalignments of 0.1-u-m,

and both serial and random-access structures to test for random fault distributions. In addition, test structures for use in measuring material properties with conventional automatic wafer probers and dc instrumentation are also being studied. Among the more advanced of these are the four-terminal

enhancement-mode MOSFET, with which dopant profiles can be measured, 2 ^ and the gated diode test structure with integral transistor switch and

source-follower MOSFET electrometer, which facilitates the measurement of

small leakage currents and the determination of generation lifetime and surface recombination velocity. 2 ?

Both the dimensional metrology and microelectronic test structure efforts are being extended in connection with the Defense Department's program

to develop very high speed integrated circuits (VHSIC). In addition, the

Commerce Department plans to undertake an initiative on Basic Measurements

for Very Large Scale Integration (VLSI) beginning late in 1980. This initiative is intended to provide the same types of technical outputs as the ongoing Semiconductor Technology Program, extended to accommodate the denser circuits, larger chips, and new processing techniques associated with VLSI. The

augmented program will address the six critical areas listed in table 1. Although rather detailed preliminary plans have been developed, it is essential

to emphasize that considerable flexibility is required in order to enable the

program to respond to industry requirements as they develop. It is also important to realize that, as has been done in the NBS Semiconductor Technology

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Table 1 — VLSI Program Elements

•Silicon characterization

•Interface characterization

•Process control metrology

•Microelectronic test structures

•Package evaluation

•Testing

Program heretofore, many of these activities involve much more than simply

finding a way to make a measurement. Fundamental work to develop a clear un- derstanding of the basis for the measurement and its range of utility is

often required as well. Key issues within each area are expected to include

the following:

Silicon characterization : methods for profiling the distribution of

dopant impurities, especially in shallow, low-dose ion implantations; methods

for characterizing nondopant or deep-level impurities and resolution of differences between results obtained by various methods; identification of appropriate parameters to be specified for substrate wafers; and techniques for

characterizing wafer surface distortion.

Interface characterization : methods for measuring neutral trap densities and distributions near silicon-silicon dioxide interfaces; techniques

for characterizing the structural and electrical properties of this and other

device interfaces; techniques for evaluating multilayer metal interconnect

systems; and methods for measuring contact resistance at the interconnectsemiconductor interface.

Process control metrology : methods for measuring linewidth and edge

quality in small features with large aspect ratio (height to width); measures

for sensitometry and other attributes of resists; and metrology associated

with control of processes such as plasma etching, ion implantation, laser annealing, and ion milling.

Microelectronic test structures : scaling to VLSI dimensions of test

structures for measuring material characteristics, pattern definition and

registration, and random fault densities and distributions; test structures

with integral signal processing circuitry; correlations between test structure characteristics and device or circuit properties; and dynamic and reliability test structures.

Package evaluation : methods for measuring device temperature and package heat transfer characteristics; methods for evaluating mechanical integrity; and tests for hermeticity and internal moisture levels.

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Testing; models for fault mechanisms; this portion of the effort is ex- pected to link with NBS programs being developed to address broader aspects

of testing complex integrated circuit chips and systems.

The goal of the expanded NBS program is to provide the sophisticated

metrology, including the underlying knowledge and supporting data, essential

for VLSI.

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References

Bullis, W. M., Semiconductor Measurement Technology: Metrology for Submicrometer Devices and Circuits, NBS Spec. Publ. 400-61 (to be published) .

Bullis, W. M. , Measurement Methods for the Semiconductor Device Industry — A Review of NBS Activity, NBS Tech. Note 511 (December 1969).

Bullis, W. M., Standard Measurements of the Resistivity of Silicon by

the Four-Probe Method, NBSIR 74-496 (August 1974).

Harman, G. G., and Kessler, H. K. , Application of Capacitor Microphones

and Magnetic Pickups to the Tuning and Trouble Shooting of Microelectronic Ultrasonic Bonding Equipment, NBS Tech. Note 573 (April 1971).

Harman, G. G., Ed., Semiconductor Measurement Technology : Microelectronic Ultrasonic Bonding, NBS Spec. Publ. 400-2 (January 1974).

Albers, J. H., Ed., Semiconductor Measurement Technology: The Destructive Bond Pull Test, NBS Spec. Publ. 400-18 (February 1976).

Rubin, S., and Oettinger, F. F., Semiconductor Measurement Technology:

Thermal Resistance Measurements on Power Transistors, NBS Spec. Publ.

400-14 (April 1979).

Standard Method for Measuring Resistivity of Silicon Slices with a Collinear Four-Probe Array, ASTM Designation F 84, Annual Book, of ASTM

Standards, Part 43 (November 1979).

Uriano, G. A. , The NBS Standard Reference Materials Program: SRMs Today

and Tomorrow, Standardization Sews 1_ (9), 8-13 (September 1979).

Miller, G. L., Robinson, D. A. H., and Wiley, J. D., Contactless Measurement of Semiconductor Conductivity by Radio Frequency Free-Carrier

Power Absorption, Rev. Sci. Instrum. Al_, 799-805 ( 1976).

Ref. 4, pp. 73-79.

Harman, G. G., A Metallurgical Basis for the Non-Destructive Bond PullTest, 12th Annual Proceedings, Reliability Physics 19 74, Las Vegas, Nevada, April 2-4, 1974, pp. 205-210.

Standard Recommended Practice for Nondestructive Pull Testing of Wire

Bonds, ASTM Designation F 458, Annual Book of ASTM Standards, Part 43

( Novembe r 1979).

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14. Standard Methods for Measuring Pull Strength of Microelectronic Wire

Bonds, ASTM Designation F 459, Annual Book of ASTM Standards, Part 43

( November 1979).

15. Method 2037, Bond Strength, MIL-STD-750B, Test Methods for Semiconductor Devices, Notice 9, 19 September 1978.

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16. Method 2011.3, Bond Strength, MIL-STD-883B, Test Methods and Procedures

for Microelectronics, Notice 2, 16 May 1979.

17. Harman, G. G., and Cannon, C. A., The Microelectronic Wire Bond Pull

Test - How to Use It, How to Abuse It, IEEE Ivans . Components, Hybrids,

and Manufacturing Technology chmt1

, 203-210 (1978).

18. Thermal Resistance Measurements of Conduction Cooled Power Transistors,

EIA Recommended Standard RS-313-B (Revision of RS-313-A) (October 1975).

19. Method 3131.1, Thermal Resistance, MIL-STD-750B, Test Methods for Semiconductor Devices, Notice 9, 19 September 1978.

20. Blackburn, D. L., Semiconduc tor Measurement Technology: Safe Operating

Area Limits for Power Transistors — Videotape Script, NBS Spec. Publ.

400-44 (September 1977).

21. Jerke, J. M., Ed., Semiconductor Measurement Technology: Accurate Linewidth Measurements on Integrated-Circuit Photomasks, NBS Spec. Publ.

400-43 (February 1980).

22. Nyyssonen, D., Optical Linewidth Measurements on Wafers, Proa . Soc,

Photo-Optical Instrum, Engrs, 135 , developments in Semiconductor Microlithography III, 115-119 (1978).

23. Jerke, J. M., Semiconductor Measurement Technology: Optical and

Dimensional-Measurement Problems with Photomasking in Microelectronics,

NBS Spec. Publ. 400-20 (October 1975).

24. Carver, G. C. , Linholm, L. W., and Russell, T. J., The Use of Microelectronic Test Structures to Characterize IC Materials, Processes, and Processing Equipment, Solid State Technology (to appear).

25. Schafft, H. a.. Semiconductor Measurement Technology: arpa/nbs Workshop

III. Test Patterns for Integrated Circuits, NBS Spec. Publ. 400-15

(January 1976).

26. Buehler, M. G., The D-C MOSFET Dopant Profile Method, J. Electrochem,

Soc. V27, 701-704 (1980).

27. Carver, G. C. , and Buehler, M. G., An Analytical Egression for the

Evaluation of Leakage Currents in the Integrated Gated-Diode

Electrometer (to be published).

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NBS-114A (REV. 9-78)

2. Gov* t. Accession No1 3. Recipient’s Accession No-

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U.S. DEPT. OF COMM.

BIBLIOGRAPHIC DATA

SHEET

1. PUBLICATION OR REPORT NO. NBSIR 80-2057

4. TITLE AND SUBTITLE

The NBS Semiconductor Technology Program and VLSI

5. Publication Date June 1980

7. AUTHOR(S)

W. M. Bullis and R. I. Scace

8. Performing Organ. Report No.

9. PERFORMING ORGANIZATION NAME AND ADDRESS

NATIONAL BUREAU OF STANDARDS

DEPARTMENT OF COMMERCE

WASHINGTON, DC 20234

11. Contract/Grant No.

12. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street, City, State, ZIP) 13. Type of Report & Period Covered

15. SUPPLEMENTARY NOTES

| | Document describes a computer program; SF-185, FIPS Software Summary, is attached.

16. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant bibliography or

literature survey, mention it here.)

The Semiconductor Technology Program at NBS is described briefly; several examples

of past successful programs and their significance are given. The work is planned

to be expanded significantly beginning in FY 1981. An outline of the present plans

for this expansion to cover the problems of very large scale integration (VLSI) is

presented.

Note: This material represents four pages of 30 in a chapter covering the role of

the U.S. Government in VLSI development. The book is to include 20 other chapters

from authors in both industry and universities, and is provisionally titled

"Microstructure Science and Technology/VLSI .

17. KEY WORDS (six to twelve entries ; alphabetical order; capitalize only the first letter of the first key word unless a proper name;

separated by semicolons)

Department of Commerce; integrated circuits; metrology for semiconductors; National

Bureau of Standards; photomasking; resistivity; second breakdown; semiconductors;

test structures; thermal resistance; very large scale integration; VLSI; wire bonds,

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