I Bufeau of Standar'ds NBS TECHNICAL NOTE

Second Breakdown in

Semiconductor Devices - A Bibliograpliy

431

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NBS TECHNICAL NOTE 431

ISSUED OCTOBER 1967

Second Breakdown in Semiconductor Devices

A Bibliography

Harry A. Schafft

Electronic Instrumentation Division

Institute for Applied Technology

National Bureau of Standards

Washington, D.C. 20234

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Price 30 cents.

Contents

Page

1. Introduction 1

2. Organization of the Bibliography 2

3. Index to Subject Matter, Reference Tabulation and

Key Word Assignments 4

4. Index to Authors 11

5. Footnotes to Bibliography 15

6. Bibliography : 16

Second Breakdown in Semiconductor Devices - A Bibliography

Harry A. Schafft

Almost 200 references

listed which provide, i coverage of the literature

tors and other semiconduc

of 1967. A representative

with what appears to be

and p-n junction diodes

consist of an author in

with reference tabulations

with appropriate key words are

t is believed, a comprehensive

of second breakdown in transistor devices from 1958 through much

list of earlier papers dealing

second breakdown in point -contact

is also included. The indexes

dex and an index to subject matter

and with key word assignments.

Key Words: bibliography, semiconductor devices, transistors, diodes, second breakdown, thermal

breakdown, device reliability, failure

modes, failure mechanisms.

1. Introduction

Second breakdown is generally

recognized as a mode of operation in

bipolar devices whose initiation is

characterized by an apparently spontaneous decrease in voltage to a low

sustaining voltage and a simultaneous constriction of current. Its

occurrence can cause circuit malfunction and device damage.

Thornton and Simmons in 1958 first

reported the phenomenon in transistors, calling it a "new high current mode of transistor operation."

They suggested that the occurrence

of this mode was responsible for the

mysterious failures that were observed in certain applications.

A full understanding of the

nature and initiating mechanisms of

second breakdown has still not been

achieved despite the existence of

the problem for these many years and

despite the many workers who have

been involved in the problem. The

conditions that make a transistor

more susceptible to second breakdown

are usually those which are typical

of higher power and higher frequency

transistors. The problem has therefore grown, with the increase in

transistor power and frequency ca- pabilities, from one which was initially of little more than academic

interest to one which has come to be

of critical importance in the

design, fabrication, testing, and

application of a wide range of

transistor types. As a result there

has been a proliferation of papers

on the subject to the point where it

is believed that a bibliography of

publications on second breakdown

will now be of assistance to those

concerned with the problem.

Under some operating conditions

a decrease in voltage and a current

constriction occur in diodes which

is suggestive of second breakdown in
transistors. English, in 1963, proposed that the same phenomenon oc- curs in both types of devices . In

1965 Agatsuma et al. saw a similar

effect in n+-n-n+ structures which

led them to the generalization that

second breakdown is a phenomenon

that can occur in any semiconductor

device. This bibliography includes

therefore those papers from 1958

through much of 1967 which appear to

deal with second breakdown in transistors, diodes and other structures. Considerable effort has been

made to search the published literature (including many of the

"trade" journals) to make the

bibliography on second breakdown

during this period as comprehensive

as possible. A few company application notes, theses, and contract

reports have also been included.

Any suggestions regarding additions

or corrections would be appreciated.

A number of papers are also

included which were published prior

to and a few years after Thornton

and Simmons ' paper that describe a similar voltage drop in point-contact and p-n junction diodes,

usually referred to in that period

as thermal breakdown or a turnover

phenomenon. For convenience in the

construction of this bibliography,

these phenomena will also be called

second breakdown. The selection in

this group of earlier papers is

meant to be representative rather

than complete.

2 . Organization of the Bibliography

Each reference

"name" which consists

of two digits, a le

needed, another digi

two digits indicate th

lication and the lette

letter of the first

name. The last dig

distinguish those re would otherwise ha

"name." No rule was assignment of this

references in the bib

arranged according to

The "names" are gro

year then in alphabeti

letter and, if requ

merical order by the 1

IS given a of a sequence

tter and, if

t. The first

e year of pubr is the first

author's surit is added to

ferences that

ve the same used in the

digit. The

liography are their "names."

uped first by

cal order by

ired, in nuast digit.

The subject matter covered by

the references are divided into

eight main topics some of which are divided into sub-topics. All topics

are defined briefly and assigned key

words in the Index to Subject

Matter, Key Word Assignments, and

Reference Tabulation. Also included

in the Index is a tabulation of the

reference "names" by the appropriate

topics and sub-topics.

Appropriate key words are arranged in a column just below each

reference in the bibliography. The

key word for each main topic is

capitalized while the key words for

the sub-topics follow in lower-case,

except for a few letter symbols. If no key words follow then the reference deals with all the sub-topics

under the given main topic. If the

reference contains an extensive

review of earlier work in its introduction or discussion sections then

the key word, SURVEY, will follow

the others listed. A survey paper

will have only one main keyword,

i.e., SURVEY, followed by appropriate minor key words.

If second breakdown is not the

major subject of the reference then

the journal citation is followed by

the symbol, (-) . When those parts

that do deal with second breakdown

can be conveniently identified in
these papers then the journal

citation is followed by the appropriate page, table or figure

numbers in parenthesis.

Journal abbreviations follow

those of Science Abstracts if they

are contained therein. Otherwise,

the abbreviations in the Chemical

Abstracts List of Periodicals are used. One exception is made in the case of the Institute of Electrical

and Electronics Engineers, which is

abbreviated IEEE. For those publications which are not listed and

where confusion might arise, no abbreviations are made.

The "name" assignments used in

this bibliography are the same as those used in a survey paper [1]

except for the following, where the

"name" used in the survey paper is

in parenthesis: 66C(66C1), 65F(66F),

65S4(66S9), 66B4(66B5), 66F(66F2),

66H(66H4), 66S(66S10), 67S2(66S).

The author gratefully acknowledges the helpful comments and suggestions

of the many people who were consulted about the format of this bibliography.

[1] H. A. Schafft , "Second Breakdown - A Comprehensive Review,"

Proc. IEEE, vol. 55, pp. 1272-1288, August 1967.
3. Index to Subject Matter, Reference Tabulatior' and Key Word Assignments

Subject Matter Key Word

I. Theory of or comments relevant to THEORY

65W, 66J

1 . initiating mechanisms . mechanisms

65J, 65W, 66J

a. critical triggering temperature . trigger temperature

51B, 53T, 54K, 54L, 55K, 59Y, 59Y1,

63B1, 63E, 63F, 63K1, 63S2, 64M, 64M1,

64R2, 64W, 64A, 65J, 65R, 65W, 65A2,

66J, 66K, 66W

b. lateral thermal instability . instability

63B, 638, 63S1, 63S4, 64S, 65G1, 65J,

65S1, 65W, 66B2, 66F, 66J, 66S6, 67M2,

67S, 67S2

c. thermal effects excluding items

a and b . thermal

49B, 51B, 52B, 54L, 57M, 57T, 60B, 60T,

620, 62S, 63B1, 63E1, 63S2, 64F, 64M1

,

64R1, 65H4, 65J, 65T, 65W, 66F1 , 66J,

66K, 660, 66S5, 66T, 66T1 , 66W, 67W

d. "pinch-in" effect . pinch

58T, 60L, 61T, 62S, 62W, 62W2, 63S2,

64W3, 65J, 65J1, 65W, 66G, 66J , 66T1,

66W, 67S, 67S2

e. free charge carrier effects . charge carriers

55K, 59Y, 60L, 61T, 63S2, 64S2, 65J,

65J1, 65W, 66E, 66G, 66J, 668, 67H2 ,

- 678
f

. non-thermal effects excluding items

d and e . -- - non- thermal

60B, 60L1, 61T, 62S, 63M, 64P2 , 64R,

64R1, 65J, 65W, 66H2 , 66J, 66L, 66S5,

66W, 67H2, 67S2

g. interactions of the above mechanisms .-- interaction

60B, 65J, 65W, 66J, 66P, 66S2, 67S2

2 . the physical state or electrical charac -

teristics of the device while in second

breakdown . - SB state

53T, 57M, 57T, 58T, 59Y, 60B, 60T, 61T,

620, 62S, 63B1, 63E, 63E1, 63S, 63S1, 64M,

64M1, 64P2, 64R2, 64S, 65H4, 65W, 66E,

66E1, 66J, 66K, 66S2, 66S6, 66W

II . Electrical characteristics associated with

second breakdown --- CHARACTERISTICS

1 . of particular devices .

a. bipolar transistors . transistor

55K, 58K, 60F, 60L, 60L1, 61G, 61T,

62H1, 621, 62M1, 62S, 62W2, 63B, 63B1,

63D, 63E1, 63F, 63K, 63K1, 63M, 63S,

63S1, 63S2, 63S3, 63S4 , 64A, 64H, 64M,

64M1, 64M4, 64N, 64P2, 64R, 64R1, 64R2,

64R3, 64S, 64S1, 64S2, 65A1, 65B, 65B1,

65F, 65G, 65G1, 65H, 65H5, 65H6, 6SP,

65R, 65R2, 65R3, 65S2, 65S4, 65T, 65T1,

66A1, 66A2, 66B2, 66C, 66F, 66F1, 66G,

66H1, 66J, 66K, 66L, 66L1 , 66N1, 66N3,

660, 66P, 66P1, 66R, 66R1 , 66S1, 66S2,

66S4, 66S5, 66S6, 66S7, 66S8, 66T,

66T1, 66V, 67E, 67G, 67H2, 67K, 67M,

67M2, 67N, 67S, 67S2, 67S4, 67W

b. p-n junction diodes . diode

57M, 57T, 59Y, 59Y1, 60T, 620, 63B1,

63E, 63E1, 63F, 64M, 64M1, 64P2, 64R1,

64W, 65C, 65F, 65H4, 66E, 66E1, 66F1,

66K, 66R, 6636
c. point-contact diodes . point contact

49B, 51B, 52B, 53T, 54K, 54L, 55K,

59Y1, 66A, 66A2

d. MPS transistors . MOS

66A4

e

.

p-n-p-n type structures . p-n-p-n

65S1

f. n'*"-n-n'*' or equivalent type structures . n'''-n-n''"

64F, 65A, 65A1, 66A2 , 67H2

2

.

during the development of second breakdown ,

a. for rectangular pulsed operating con -

tions . pulsed

49B, 52B, 53T, 54K, 54L, 55K, 57M, 59Y,

61T, 62M1, 620, 62S, 62W2 , 63B1, 63E1,

63F, 63K, 63S, 63S1, 64A, 64M, 64S, 64S1,

64W, 6SA1, 65G, 65R3, 65T, 66A, 66A2,

66A3, 66E, 66F, 66F1, 66G, 66N1, 66N3,

660, 66S1, 66S2, 66S6, 66T, 66T1 , 67M2,

67S4

b

.

for other than rectangular pulsed and a variety of swept operating conditions . swept

49B, 52B, 54L, 57T, 58T, 60F, 60L1, 60T,

61G, 61T, 62H1, 621, 62M1, 620, 62S,

62W2, 63E, 63E1. 63F, 64A, 64M4 , 64P2,

64R1, 64R2, 64S1 , 65A, 65A1, 65H4, 65P,

65R, 65R3, 65S2, 65T, 66A, 66A1 , 66A2

,

66A3, 66A4, 66F, 66J, 66K, 66L, 66R,

66S5, 66S8, 67G, 67M, 67N, 67S, 67S2,

67S4

3. during second breakdown where

a. a single continuous V-I characteristic

is observed . SB

49B, 53T, 57M, 57T, 58T, 59Y, 60T, 51T,

620, 63B1, 63E, 63E1, 63S, 63S1, 63S3,

64P2, 64R1, 64S, 65G, 65H6, 65P, 66E,

66E1, 66J, 66K, 66S1, 66S2, 66T1
b. multiple voltage levels are observed , multiple levels

49B, 63E1, 64M1, 64N, 64P2, 65G, 66A3,

66E1, 66F1, 66J, 66N1, 66S2,

4. observed by measurement techniques which

are discussed in detail or which are original . measurement

58T, 59Y, 62S, 64A, 64S1, 65T, 66J, 66N3,

66S4, 66S5, 66S6, 66T, 66T1, 67G

5. of osci l lations observed prior to or during second breakdown operation . oscillations

49B, 55K, 59Y, 62M1, 64M, 64M4, 65114,

66A3, 66E, 66G, 66L1 , 66S4, 67S2

6

.

used as indicators of second breakdown

imminence . indicator

63S, 63S1, 63S4, 64M4, 64S, 64S1, 65B,

66N1, 66R, 66S4, 66S6, 66S8, 66V, 67S

7. as they are affected by

a. resistive ballasting . -- ballast

65G1, 65R2, 65S4, 65T1, 66B2, 66N1,

66R1, 66S6, 66S7, 66S8, 67S

b. device design excluding resistive

ballasting . design

58T, 60L1, 61T, 62H1, 62W2, 63B, 63B1,

63S, 63S1, 63S4, 64M, 64R, 64R1, 64R2

,

64R3, 64S, 64S1, 65B1, 65G1 , 65H, 65H5,

65R2, 65R3, 65S1 , 65T, 66A, 66R2, 66E,

66E1, 66G, 66H1, 66J, 66K, 66N1, 66P,

66R, 66R1, 66S1, 66S2, 66S5, 66S6, 66S7,

66T1, 67E, 67H2, 67K, 67M2, 67S, 67S2,

67W

c. internal current distributions. current distribution

58T, 59Y1, 62S, 62W2, 63B, 63E1, 63F,

63S, 63S1, 63S3, 64A, 64R1, 64R2 , 64S,

64S1, 65G1, 65P, 65R2, 65R3, 65S4, 65T,

66B2, 66N1, 66P, 66S1 , 66S2, 66S6,

66S7, 66V, 67M2, 67S2, 67W
d. design deficiencies and material defects . defect

51B, 58T, 61T, 62S, 63D, 63E1, 63K,

63K1, 63M, 63S, 63S1, 63S2, 63S3,

63S4, 64S, 65B1, 65C, 65F, 65S1, 65T,

66L, 66P, 66S1, 66S2, 66S6, 67S2, 67W

e. nuclear radiation . radiation

64H, 64R3, 66C

f. a magnetic field . magnetic field

63E1, 65G

g. surface arcs spanning a p-n junction . arc

63E, 63E1

III . Observations made prior to or during second

breakdown of OBSERVATION

66S6

1

.

the thermal impedance or internal

temperature of the device . -temperature

53T, 57T, 59Y, 59Y1, 60T, 63E2, 63F, 63F1,

63K1, 63S, 63S1, 63S4, 64B1, 64M, 64R,

64R1, 64R2, 64S , 65A, 65H3, 65H4 , 65P1,

65R, 65T, 65A2, 66P1, 66R, 66S4 , 66S6,

66T, 66T1, 67H1, 67N, 67P, 67W1

2. the light emission from the device . light

57T, 60T, 63E, 63E1, 63H, 64P2, 65H6, 65V,

56A4, 66E1, 66S6

3. the internal current distribution via an intermediary sensor . current distribution

62T, 63E2, 63F, 63F1, 63M, 63S, 63S1, 63S3,

63S4, 64B1, 64M2, 64S, 65G, 65H3, 65P1,

65R2, 65S4, 66A2, 66N, 66P, 66P1, 66S2,

66S6, 66S8, 67H1, 67N, 67P
IV. Precautions in the use of devices in circuits . PRECAUTIONS

59L, 60L1, 61G, 62H, 62T, 62M, 62W1, 63C,

63H1, 63L, 63M1, 63W, 64B, 64B3, 65F1,64G,

65M3, 64M4, 64P, 64P1 , 64S1, 64S3, 64W1, 64W2

,

65B, 65H, 65H5, 65S, 65S2, 65T1, 65W1, 66B,

66B1, 66C, 66F, 66M, 66N2, 66R2, 66R3, 66R4

,

66S, 67G, 67M, 67S, 67S4, 67T, 67V

V. Specifications of transistor operations free

of second breakdown SPECI FI CATIONS

62G, 63C, 63G, 63M1, 64B2, 64B3, 64G, 64S1,

65B, 65R3, 65S, 66B1 , 66N2, 66S, 66V, 67T

1. specifications for forward base drive

operation .

61G, 62G, 63C, 63G, 63M1, 63N, 64B2, 64B3,

64G, 64S1, 65B, 65G1, 65R1, 65R3, 65S, 66B,

66B1, 66B2, 66N2 , 660, 66R1, 66S, 66S4,

66V, 67E, 67S4, 67T

2. specifications for reverse base drive

operation .

62G, 62H, 63C, 63G, 63L, 63M1, 63N, 63W,

64B, 64B2, 64B3, 64G, 64M4, 64P1 , 64S1

,

64S3, 64W2, 65B, 65R1, 65R3, 65S, 66B1,

66F, 66N2, 66S, 66S4, 66V, 67T, 67V

3. specifications for open base operation

61G, 62G, 63C, 63G, 63M1, 63N, 64B2, 64B3,

64G, 64S1, 64S3, 65B, 65G1, 65R1, 65R3,

65S, 66A1, 66B1, 66B2, 66B3, 66N2, 66R1 , 66S, 66S4, 66V, 67T

4 . precautions and use of published

specifications . -- - use

61G, 62G, 63C, 63G, 63M1, 64B, 64B2 , 64B3,

64G, 64S1, 64S3, 65B, 65R3, 65S, 66B,

66B1, 66N2, 66S, 66V, 67E, 67T
5 . testing or test sets for developing or checking specifications . - test

61G, 62G, 62H, 63C, 63D, 63G, 63L, 63M1,

63N, 63W, 64B, 64B2, 64B3, 64G, 64M4 , 64P1

,

64S1, 64S3, 64W2, 65B, 65R1, 65R3, 65S,

66B, 66B1, 66B3, 66F, 66N2, 66S, 66S4,

66V, 67E, 67T, 67V

VI . Effects of second breakdown operation on the

physical structure or the electrical charac -

teristics of the device . DAMAGE

58T, 61G, 61T, 620, 62S, 63B1, 63D, 63E1, 63F,

63S2, 64P, 64R3, 64S, 65H, 65H1, 65H2, 65H4,

65H5, 65H6, 65S1, 65T, 66E, 66F1 , 66H, 66H1,

66L, 66S1, 66S5, 66S6, 67S, 67S3, 67S4

VII. Circuit applications for second breakdown . APPLICATION

58T, 63B1, 63E1, 66B4 , 67H

VIII. Survey or extensive review of - -- SURVEY

66S3, 67S1

1. theory (topic I) . theory

62S, 63E1, 66S3, 67M1, 67S1

2. electrical characteristics (topic II) . characteristics

62S, 63E1, 65S, 66S, 66S3, 67S1

3. specifications (topic V) - specifications

65S, 66S, 66S3, 67M1, 67S1

10
4. Index to Authors

Abraham, A. , 57T, 60T

Agatsuma, T. , 64A, 65A, 65A1, ooA,

66A1, 66A2

Aldrich, R. W. , 60L

Anupyl'd, A. Yu. , 66A3

Asakawa, T, 66A4

BBallard, J. W. , 64B1

Balthasar, P. P., 65B, 66B, 66B1

Barton, F. A. , 66R3

Beaudouin , J., 65S1

Bendix, 64B2

Benzer, S., 49B

Bergmann, F., 63B, 66B2

Billette, R. , 63M

Billig, E. , 51B, 52B

Bizard, R. , 64B3

Bloomquist, J. C, , 66B4

Bolvin, R. , 64B, 66B3

Bond, P. R. , 63B1

Bond, R. A., 66B4

Borofsky, A. J. , 65B1

Bo\^mlan, W. C. , 66C

Brouillette, J. W. , 60L

Brown, H. E. , 66B4

Burgess, R. E. , 606

C

Caldwell, R. S., 66C

Carley, D. R. , 65R2

Chaligne, P. , 64B3

Chang, J. J. , 64W

Chang, Z. F. , 63C

Chu, T. L. , 65C

CoraZi.a , M. , 66N3

D

Domingues Novo, D. , 66N3

Dougal, A. A. , 64F, 66F1

Doversberger , K. W. , 63D

E

Egawa , H. , 66E

Electronics, 63E2

Electro-Technology, 67E

English, A. C. , 63E, 63E1, 66E1

Englund, J. W. , 6 2W1

Ernick, F. G. , 67K

F

Faust, Jr. , J. W. , 65F

Feoktistov, Yu. F., 65G

Ferry, D. K. , 64F, 66F1

Fleming, D. C. , 65B1

Folsom, J. A. , 66C

Ford, G. M. , 63F, 64F1

Forrest, N. L. N. , 6nF

Frazier, H. D. , 63F1

French, J. C. , 62S, 63S2, 63S3

65S, 66S2, 66S3

11
Fuj inuma, K. , 66F

Gamble, P. R. , 64P2

Gerstner, D. , 63B, 66B2, 65G1,

6 7G

Ghandi, S. K. , 60L

Goryunov, N. N. , 6 5G

Greenburg, R. , 61G, 62G, 63G, 64G

Grutchfield, H. B. , 66G

H

Haitz, R. H., 63S, 63S4, 65H4

Hakim, E. B., 63H, 64H, 64R, 64R2,

64R3, 65H, 65H1,

65H2, 65H5, 65H6, 65R

66H1, 66R, 67H

Halavacek, A. R. , 60L1

Hamakawa, Y. , 59Y, 59Y1

Hamiter, L. , 67H1

Hardway, H. L. , 6 3M1

Hardy, G. F. , 67S2

Harman, G. G. 66H2

Hartz, R. S. , 62H

Henisch, H. K. , 53T

Hermann, K. , 63H1

Hilibrand, J. , 62H1

Hlavacek, A. R. , 60L1

Holonyak, Jr., N., 60L

Holschwandner , L. H. , 66S5

Hooper, W. W. , 63S4, 65S3

Howarth, D. W. , 63H3

Hower, P. L. , 67H2

Hubner, K. , 65S1

Huenemann, R. G., 66H

Hughes, K. A. , 66N

Intermetall, 621

J

John, H. F. , 65F

Jordan, Jr. , W. F. , 59L

Josephs, H. C, 65J, 65J1, 66J

K

Kannam, P. J. , 65C, 67K

Khurana, B. S. , 66K

Kikuchi, M. 54K, 55K

Kocsis, M. , 63K, 63K1

Kohisa, T. , 64A, 65A

LLaracuente, F. A., 67N

Lee , J. S. , 63L

Le Gall, J. , 66S7

Lempicki , A. , 54L

Lesk, I. A. , 60L

Lewis, E. T. , 66L

Lin, H. C. , 59L, 60L1

Lohrmann, D. R. , 66L1

M

Mano, K. , 65T, 66T, 66T1

Marino , J . , 6 7K

Marshall, S. L. , 67M1

Mathews, J. W. , 6 2M

12
Matyckas, S., 66M

Matz, A. W. , 57M

McSherry, L. K. , 65H, 65H2, 65H5

Melchior, H. , 64M, 64M1

Miller, E. A. , 67M2

Miller, J. , 64M3, 64M4

Miller, R. P. , 62M1

Minton, R. , 67M

Morey, R. F. , 63M1

Morrison, S. R. , 63M

Moutoux, T. J, , 66G

Mueller, 0. , 64M2

N

Naborowski, J. G., 63N, 64N

Neve, N. F. B. , 66N

Newman, R. A. , 66N2

Nienhuis, R. J. , 66N1

Novo, D. Domingues , 66N3

Nowakowski, M. F., 67N

Oda, H. , 660

Oka, H. , 620

Oshima, S., 620

Ovechkin, Yu. A. , 65G

Partridge , J, , 64P

Perkins, C. , 65P

Peterman, D. A., 65P1, 66P, 66P1,

67P

Pisarcik, D. A. , 64P1

Plumlee, H. R. , 66P, 66P1

Portnoy , W. M. , 64P2

Power, H. M. , 63E

R

RCA, 65R3

Reddi, V. G. K. , 67H2

Reich, B., 63H, 64H, 64R, 64R1,

64R2, 64R3, 65H, 65H2

,

65H5, 65R, 66R, 66R1

,

66R2

Resch, W. , 65R1

Richards , N. G. , 66R3

Rogers , J. D. , 66R4

Rosenzweig, R. , 65R2

Ruggles , Jr. , R. L. , 66S]

S

Savchenko, A. M. , 65G

Scarlett, R. M. , 63S, 63S1, 63S4

64S, 66S6, 67S2

Schafft, H. A., 62S, 63S2, 63S3,

65S, 66S, 66S1, 66S2

,

66S3, 67S1

Schenck, J. F., 67S3

Schiff, P., 64S1, 64S3, 66S4

Schneer, G. H., 66S5

Schroen, W, , 64S, 65S1, 65S3,

66S6

Schwuttke, G. H. , 66S1

Seneret , J. , 65S2

Shockley, W. , 63S, 63S1, 63S4

Simmons , C. D. . 58T

Smith, H. S. , 67S4

Stankovo, A. V. , 65G

13
Steffe, W. , 66S7, 67S

Stickler, M. G. , 64S2

Stickler, R. , 65F

Stolnitz, D., 65S4, 66S8

Strutt, M. J. 0., 64M, 64M1

Sugano, T., 66K

Sugiyama, A., 64A, 65A

Sulway, D. V. , 66N

I

Takagi, K. , 65T, 66T, 66T1

Tarui, Y. , 54K, 55K

latum, J. G. , 65T1

Tauc, J. , 57T, 60T

Thire, J. , 61T

Thornton, C. G., 58T

Thornton, P. R. , 66N

Tipple, P. M. , 53T

Tokuyama, T. , 62T

Tolkacheva, Ya. A., 65G

Tsubouchi, N. , 66A4

Turner, C. R. , 63C, 67T

Winkler, R. H. , 67W1

White, B. II. , 6nLl

Wilson, R. L. , 66S4

Wolff, K. , 64W3

Wood, C. , 54L

Workman, W. , 67P

Wormser, J. J., 66R4

Y

Yamaguchi, J., 59Y, 59Y1

Yanai, H. , 66K

V ", " .

•

. .^- . -

Vahle, R. W. , 66V, 67V

Van Wyk, J. D. , 65V

W . -^

Wang, W. , 64W

Weitzsch, F. , 62W, 64W3, 65W, 66W

Wheatley, C. P., 62W1, 63W, 64W1,

64W2, 6SW1, 67W

Wiesner, R. , 62W2

14
5. Footnotes to Bibliography

[1] This and the other papers so footnoted do not deal directly with second

breakdown but may nevertheless be of some interest.

[2] Available from the Clearinghouse for Federal Scientific and Technical

Information, Department of Commerce, Sills Building, 5285 Port Royal

Road, Springfield, Virginia 22151, by using the AD number.

15
6. Bibliography

1949 -- 1961

49B Benzer, S.

HIGH INVERSE VOLTAGE GERMANIUM RECTIFIERS

J. Appl. Phys., vol. 20, pp. 804-815, August 1949.

THEORY: thermal.

CHARACTERISTICS: point contact, pulsed, swept, SB, multiple levels,

oscillations

.

51B Billig, E.

APPLICATION OF THE IMAGE-FORCE MODEL TO THE THEORY OF CONTACT

RECTIFICATION AND OF RECTIFIER BREAKDOWN

Proc. Roy. Soc, vol. 207A, pp. 156-181, June 1951.

THEORY: trigger temperature, thermal.

CHARACTERISTICS: point contact, defect.

52B Billig, E.

EFFECT OF MINORITY CARRIERS ON THE BREAKDOWN OF POINT CONTACT

RECTIFIERS

Phys. Rev., vol. 87, pp. 1060-1061, September 15, 1952.

THEORY: thermal.

CHARACTERISTICS: point contact, pulsed, swept.

53T Tipple, P. M. , and H. K. Henisch

THERMAL EFFECTS AT POINT CONTACT DIODES

Proc. Phys. Soc, vol. 66B, pp. 826-832, October 1953.

THEORY: trigger temperature, SB state.

CHARACTERISTICS: point contact, pulsed, SB.

OBSERVATION: temperature.

54K Kikuchi, M. , and Y. Tarui

TRANSIENT PHENOMENA IN THE BACKWARD DIRECTION OF GERMANIIPl CRYSTAL

RECTIFIERS

J. Phys. Soc. Japan, vol. 9, pp. 642-644, July/August 1954.

THEORY: trigger temperature.

CHARACTERISTICS: point contact, pulsed.

54L Lempicki, A., and C. Wood

OBSERVATIONS ON A FORM OF BREAKDOWN IN G?-RMANIUM DIODES

Proc. Phys. Soc, vol. 67B, pp. 328-337, April 1954.

THEORY: trigger temperature, thernnl.

CHARACTERISTICS: point contact, pulsed, sv.'ept

.

55K Kikuchi, M. , and Y. Tarui

STEP AND OSCILLATION PHENO^IENA IN TI''E COLLECTOP OF A-TYPE

TRANSISTORS

J. Phys. Soc. Japan, vol. 10, pp. 722-723, August 1955.

THEORY: tripper tepipcrature , cliarge carriers.

CHARACTERIStVcS: transistor, point contact, pulsed, oscillations.

16
57M Matz, A. W.

THERMAL TURNOVER IN GERMANIUM P-N JUNCTIONS

Proc. Inst. Elec. Engrs .

, vol. 104B, pp. 555-564, November 1957.

THEORY: thermal, SB state.

CHARACTERISTICS: diode, pulsed, SB.

57T Tauc, J., and A. Abraham

THERMAL BREAKDOWN IN SILICON P-N JUNCTIONS

Phys. Rev., vol. 108, pp. 936-937, November 15, 1957.

THEORY: thermal, SB state.

CHARACTERISTICS: diode, swept, SB.

OBSERVATION: temperature, light.

58T Thronton, C. G. , and C. D. Simmons

A NEW HIGH CURRENT MODE OF TRANSISTOR OPERATION

IRE Trans. Electron Devices, vol. ED-5, pp. 6-10, January 1958.

THEORY: pinch, SB state.

CHARACTERISTICS: transistor, swept, SB, measurement, design, current

distribution, defect.

DAMAGE

APPLICATION

59L Lin, H. C. , and W. F. Jordan, Jr.

EFFECT OF TRANSIENT VOLTAGES ON TRANSISTORS •

" IRE Trans. Electron Devices, vol. ED-6, pp. 79-83. January 1959. [1]

PRECAUTIONS

59Y Yamaguchi, J., and Y. Hamakawa

HIGH ELECTRIC FIELD EFFECTS IN GERMANIUM P-N JUNCTION

J. Phys. Soc. Japan, vol. 14, pp. 15-21, January 1959.

THEORY: trigger temperature, charge carriers, SB state.

CHARACTERISTICS: diode, pulsed, SB, measurement, oscillations.

OBSERVATION: temperature.

59Y1 Yamaguchi, J., and Y. Hamakawa

BARRIER TEMPERATURE AT TURNOVER IN GERMANIUM P-N JUNCTIONS

J. Phys. Soc. Japan, vol. 14, pp. 232-233, February 1959.

THEORY: trigger temperature.

CHARACTERISTICS: diode, point contact, current distribution.

OBSERVATION: temperature.

60B Burgess, R. E.

NEGATIVE RESISTANCE IN SEMICONDUCTOR DEVICES

Canad. J. Phys., vol. 38, pp. 369-375, March 1960.

THEORY: thermal, non-thermal, interaction, SB state.

60F Forrest, N. L. N.

AVALANCHE CARRIER MULTIPLICATION IN JUNCTION TRANSISTORS AND ITS

IMPLICATIONS IN CIRCUIT DESIGN

Journal of the British Institution of Radio Engineers, vol. 20,

pp. 429-439, June 1960. (PP. 438-439)

CHARACTERISTICS: transistor, swept.

17
60L Lesk, I. A., N. Holonyak, Jr., R. W. Aldrich, J. W. Brouillette, and

S. K. Ghandi

A CATEGORIZATION OF THE SOLID-STATE DEVICE ASPECTS OF MICROSYSTEMS

ELECTRONICS

Proc. IRE, vol. 48, pp. 1833-1841, November 1960. (pp. 1837-1P38)

THEORY: pinch, charge carriers.

CHARACTERISTICS: transistor.

60L1 Lin, H. C. , A. R. Hlavacek, and B. H. White

TRANSIENT OPERATION OF TRANSISTOR WITH INDUCTIVE LOAD

IRE Trans. Electron Devices, vol. ED-7, pp. 174-178, July 1960.

THEORY: non- thermal

.

CHARACTERISTICS: transistor, swept, design.

PRECAUTIONS

60T Tauc, J., and A. Abraham

DER ELEKTRISCHE DURCHSCHLAG AN P-N UBERGANGEN IN SILIZIW

Abhandl. Deut. Akad. Wiss. Berlin, Kl . Math. Phvsik Tech., no. 1,

pp. 27-31, 1960.

THEORY: thermal, SB state.

CHARACTERISTICS: diode, swept, SB.

OBSERVATION: temperature, light.

61G Greenburg , R.

BREAKDOWN VOLTAGE IN POWER TRANSISTORS

Semiconductor Prod., vol. 4, pp. 21-25, November 1961.

CHARACTERISTICS: transistor, swept.

PRECAUTIONS

SPECIFICATIONS: F, 0, use, test.

DAJIAGE

61T Thire, J.

LE PHENOMENE DE PINCEMENT SUR LES TRANSISTORS DE PUISSANCE EN

COMMUTATION

Colloque International sur les dispositifs a Semiconducteurs , (Paris)

Editions Chiron, 1961, pp. 277-293.

THEORY: pinch, charge carriers, non-thermal, SB state.

CHARACTERISTICS: transistor, pulsed, swept, SB, design, defect.

DAMAGE

- 196 2

-

62G Greenburg, R. RELIABILITY OF GERMANIUM POWER TRANSISTORS

IEEE WESCON Convention Record, vol. 6, pt. 5.2, pp. 1-5, 1962. (-)

SPECIFICATIONS

62H Hartz, R. S.

STOP TRANSISTOR FAILURES IN MAGNETIC-DEFLECTION CIRCUITS

Electronics, vol. 35, pp. 37-39, August 3, 1962.

PRECAUTIONS

SPECIFICATIONS: R, test.

18
62H1 Hilibrand, J.

TRANSISTORS FOR HIGH POWER AT HIGH FREQUENCY

Northeast Electronic Research Engineering Meeting Record, (Boston,

Mass.), pp. 128-129, November 1962.

CHARACTERISTICS: transistor, swept, design.

621 Intermetall

KOLLEKTOR - DURCHBRUCHSERSCHEINUNGEN IN LEISTUNGSTRANSISTOREN

Ektronische Rundschau, vol. 16, pp. 221-222, May 1962.

CHARACTERISTICS: transistor, swept.

PRECAUTIONS

6 2M . Mathews, J. W.

TRANSISTOR FAILURE MODES IN HIGH POWER SWITCHING OPERATION

IRE Trans. Broadcast and Televis. Receivers, vol. BTR-8, pp. 35-39,

July 1962. (-)

PRECAUTIONS

62M1 Miller, R. P. DEPENDENCE OF POWER TRANSISTOR FAILURE ON THEIR ENERGY CHARACTERISTICS

Semiconductor Prod. Solid State Technol., vol. 5, pp. 15-17,

July 1962.

CHARACTERISTICS: transistor, pulsed, swept, oscillations.

620 Oka, H., and S. Oshima

BREAKDOIVN IN SILICON POWER DIODE

Mitsubishi Denki Lab. Rep., vol. 3, pp. 165-181, April 1962.

THEORY: thermal, SB state.

CHARACTERISTICS: diode, pulsed, swept, SB.

DAMAGE

62S Schafft, H. A., and J. C. French

SECOND BREAKDOWN IN TRANSISTORS

IRE Trans. Electron Devices, vol. ED-9, pp. 129-136, March 1962.

THEORY: thermal, pinch, non- thermal , SB state.

CHARACTERISTICS: transistor, pulsed, swept, measurement, current

distribution, defect.

DAMAGE

SURVEY: theory, characteristics.

62T Tokuyama, T.

METHOD FOR VISUALIZING THE DISTRIBUTION OF CURRENT IN ALLOYED

GERMANIUM p+-n JUNCTIONS

Solid-State Electronics, vol. 5, pp. 135-142, Mav/June, 1962. [1]

OBSERVATION: current distribution.

62W Weitzsch, F. ZUM EINSCHNUREFFEKT BEI TRANSISTOREN DIE IM DURCHBRUCHSGEBIET

BETRIEBEN WERDEN

Arch. Elekt. Ubertragung, vol. 16, pp. 1-8, January 1962.

THEORY: pinch.

19
62W1 Wheatley, C. F. , and J. W. Englund

RELIABILITY CONSIDERATIONS IN THE APPLICATION OF POWER TRANSISTORS TO

CONSUMER PRODUCTS

IRE Trans. Broadcast Televis. Receivers, vol. BTR-8, pp. 65-73,

July 1962. (-)

PRECAUTIONS

62W2 Wiesner. R.

DAS VERHALTEN DES TRANSISTORS BEI GROSSER AUSSTEUERUNG

Nachrichtentech. Z., vol. 15, pp. 323-332, July 1962. (pp. 331-332)

THEORY: pinch.

CHARACTERISTICS: transistor, pulsed, swept, design, current distribution.

- 1963 -

63B Bergmann, F. , and D. Gerstner

THERMISCH BEDINGTE STROMEINSCHNURUNG BEI HOCHFREQUENZ - LEISTUNGSTRANSISTOREN (EIN BEITRAG ZUM PROBLEM DES SECOND

BREAKDOWN)

Arch. Elekt. Ubertragung, vol. 17, pp. 467-475, October 1963.

THEORY: instability.

CHARACTERISTICS: transistor, design, current distribution.

63B1 Bond, P. R.

SECONDARY BREAKDOWN IN TRANSISTORS

Ph.D Thesis, Iowa State University of Science and Technology, Ames,

Iowa, pp. 1-61, 1963.

THEORY: trigger temperature, thermal, SB state.

CHARACTERISTICS: transistor, diode, pulsed, SB, design.

DAMAGE

APPLICATION

6 3C Chang, Z. F. , and C. R. Turner

CHARACTERIZATION OF SECOND BREAKDOWN IN SILICON POWER TRANSISTORS

RCA Application Note SMA-21, pp. 1-8, May 1963.

PRECAUTIONS

SPECIFICATIONS

63D Doversberger , K. W.

HIGH-POWER DYNAMIC LIFE TESTS OF TRANSISTORS

IEEE Trans. Reliability, vol. 12, pp. 9-17, March 1963. (-)

CHARACTERISTICS: transistor, defect.

SPECIFICATIONS: test.

DAMAGE

63E English, A. C, and H. M. Power

MESOPLASMA BREAKDOWN IN SILICON JUNCTIONS

Proc. IEEE, vol. 51, pp. 500-501, March 1963.

THEORY: trigger temperature, SB state.

CHARACTERISTICS: diode, swept, SB, arc. OBSERVATION: light.

20
63E1 English, A. C. = MESOPLASMAS AND SECOND BREAKDOWN IN SILICON JUNCTIONS

Solid-State Electronics, vol. 6, pp. 511-521, September-October 1963

THEORY: thermal, SB state

CHARACTERISTICS: transistor, diode, pulsed, swept, SB, multiple levels,

current distribution, defect, magnetic field, arc. OBSERVATION: light.

DAMAGE

APPLICATION

SURVEY: theory, characteristics.

63E2 Electronics

PHOSPHORS TRACE HEAT FLOW PATTERNS

. Electronics, vol. 36, pp. 40-42, August 23, 1963. (-)

OBSERVATION: temperature, current distribution.

63F Ford, G. M.

COLLECTOR TO EMITTER BREAKDOWN RELATED TO THERMAL RUNAWAY IN

HOMOGENEOUS BASE GERMANIUM POWER TRANSISTORS

Solid State Design, vol. 4, pp. 29-36, June 1963.

THEORY: trigger temperature.

CHARACTERISTICS: transistor, diode, pulsed, swept, current distribution.

OBSERVATION: temperature, current distribution.

DAMAGE

63F1 Frazier, H. D. TEMPERATURE DEPENDENT FLUORESCENT PAINTS A GRA^^HIC DISPLAY OF

TEMPERATURE DISTRIBUTION

IEEE WESCON Convention Record, vol. 7, pt. 3.1, pp. 1-5, 1963. (-)

OBSERVATION: temperature, current distribution.

63G Greenburg, R. GETTING BOTH RELIABILITY AND ECONOMY IN POWER-TRANSISTOR CIRCUITS

Electronics, vol. 36, pp. 54-57, May 24, 1963. (-)

SPECIFICATIONS

63H Hakim, E. B., and B. Reich

LIGHT EMISSION FROM SILICON TRANSISTOR JUNCTIONS

Proc. IEEE, vol. 51, pp. 1155-1156, August 1963. (-)

OBSERVATION: light.

63H1 Hermann, K. SELECTING TRANSISTORS FOR COIL DRIVERS

Electro-Technology, (New York), vol. 72, pp. 106-107, December 1963.

(-)

PRECAUTIONS

63K Kocsis, M.

INFLUENCE OF NONUNIFORM BASE-WIDTH ON TRANSISTOR FAILURES

Proc. IEEE, vol. 51, p. 229, January 1963.

CHARACTERISTICS: transistor, pulsed, defect.

21
63K1 Kocsis, M.

ZUSAM?.1EN'HANG ZWISCHEN INHOMOGENER BASISDICKh UND ZERSTORUNC DES

LECIERTEN TRANSISTORS

Tungsram Technische Mitteilungen , no. 8, pp. 317-335, January 1963.

THEORY: trigger temperature.

CHARACTERISTICS: transistor, defect.

OBSERVATION: temperature.

63L Lee, J. S.

SWITCHING INDUCTIVE LOADS WITH TRANSISTORS

Electronic Equipment Engineering, vol. 11, pp. 54-57, June 1963.

PRECAUTIONS

SPECIFICATIONS: R, test.

63M Morrison, S. R. , and R. Billette

COMMON EMITTER BREAKDOl'JN

IEEE Trans. Electron Devices, vol. ED-IO, pp. 351-356, November 1963.

Cp. 354)

THEORY: non- thermal.

CHARACTERISTICS: transistor, defect.

OBSERVATION: current distribution.

63M1 Morey, R. P., and H. L. Hardway

POWER TRANSISTOR SAFE OPERATING AREAS

Solid State Design, vol. 4, pp. 10-14, July 1963.

PRECAUTIONS

SPECIFICATIONS

63N Naborowski , J. G.

MODULATED GENERATOR TESTS TRANSISTOR BREAKDOWN

Electronic Design, vol. 11, pp. 82-85, December 6, 1963.

SPECIFICATIONS: F, 0, R, test.

63S Scarlett, R. , W. Shockley, and R. H. Haitz

THERMAL INSTABILITY AND HOT SPOTS IN JUNCTION TRANSISTORS

Physics of Failure in Electronics, M. F. Goldberg and J. Vaccaro, Eds

Baltimore, Md. : Spartan Books, 1963, pp. 194-203.

THEORY: instability, SB state.

CFIARACTERISTICS: transistor, pulsed, SB, indicator, design, current

distribution, defect.

OBSERVATION: temperature, current distribution.

63S1 Scarlett, R. M, , and W. Shockley

SECONDARY BREAKDOWN AND HOT SPOTS IN POWER TRANSISTORS

IEEE International Convention Record, vol. 11, pt. 3, pp. 3-13, 1963.

THEORY- instability, SB state.

CHARACTERISTICS: transistor, pulsed, SB, indicator, design, current

distribution, defect.

OBSERVATION: temperature, current distribution.

22
6352 Schafft, H. A., and J. C. French

CHARACTERISTICS OF SECOND BREAKDOWN AND TRANSISTOR FAILURE

Physics of Failure in Electronics, M. F. Goldberg and J. Vaccaro

,

Eds. Baltimore, Md. : Spartan Books, 1963, pp. 104-107.

THEORY: trigger temperature, thermal, pinch, charge carriers.

CHARACTERISTICS: transistor, defect.

DAMAGE

6353 Schafft, H. A., and J. C. French

SECOND BREAKDOWN; EFFECTS OF BASE DRIVE AND STRUCTURAL DEFECTS

IEEE Professional Technical Group on Electron Devices Meeting,

Washington, D. C. , October 1963.

CHARACTERISTICS: transistor, SB, current distribution, defect.

OBSERVATION: current distribution.

6354 Shockley, W. , R. M. Scarlett, R. Haitz, and W. Hooper

THERMAL INSTABILITY IN EXTENDED TRANSISTOR AND THERMISTOR STRUCTURES

Part II of "Failure mechanisms in silicon semiconductors," H. J.

Queisser, Ed., Shockley Transistor, Palo Alto, Calif., Final Rept.,

Contract AF30 (602) -2556 , January 1963. AD 297 033 [2] (pp. 139-247)

THEORY: instability, SB state.

CHARACTERISTICS: transistor, pulsed, indicator, design, current distribution,

defect

.

OBSERVATION: temperature, current distribution.

DAMAGE

63W Wheatley, C. F. DESIGN FACTORS FOR TRANSISTORIZED TELEVISION DEFLECTION CIRCUITS

IEEE Trans. Broadcast Televis. Receivers, vol. BTR-9, pp. 72-80,

July 1963. (-)

PRECAUTIONS

SPECIFICATIONS: R, test.

- 1964 -

64A Agatsuma, T. , T. Kohisa, and A. Sugiyama

AN ASPECT OF SECOND BREAKDOWN IN TRANSISTORS

Proc. IEEE, vol. 52, pp. 1372-1373, November 1964.

CHARACTERISTICS: transistor, pulsed, swept, measurement, current

distribution.

64B Bolvin, R.

SPECIFYING THE BEST TRANSISTOR FOR POWER INVERTERS

EEE; The Magazine of Circuit Design Engineering, (New York), vol. 12,

pp. 55-56, October 1964.

PRECAUTIONS

SPECIFICATIONS: R, use, test.

64B1 Ballard, J. W.

DETECTION AND PREDICTION OF MALFUNCTION OF ELECTRONIC COMPONENTS

BY CONTACT THERMOGRAPHY

National Aerospace Electronics Conference Proceedings, (Dayton, Ohio)

p. 154-163, May 1964. [1]

OBSERVATION: temperature, current distribution.

23
64B2 Bendix

SAFE OPFRATINC; AREAS OF BENDTX DIFFUSED ALLOY POWER DAP TRANSISTORS

AND GERMANIUM POWER TRANSISTORS IN POWER SWITCHINO AND DC APPLICATIONS

Bendix Corporation Application Note, pp. 1-6, September 15, 1964.

SPECIFICATIONS

64B3 Bizard, R. , and P. Chaligne

UTILISATION DES TRANSISTORS DE PUISSANCE COSEM EN AMPLIFICATION ET

COMMUTATION^

Compagnie generale des Semi -conducteurs Application Note, pp. 1-21,

1964(?).

PRECAUTIONS

SPECIFICATIONS

64F Ferry, D. F., and A. A. Dougal

THERMAL PINCHING AT LOW FIELDS IN N-TYPE GERMANIUM

IEEE Electron Devices Meeting, Washington, D. C, October 1964.

THEORY: thermal.

CHARACTERISTICS: n*-n-n+.

64F1 Ford, G. M.

CHARACTERISTICS OF IGNITION TRANSISTORS

IEEE Trans. Industr. Electronics Control Instrum.

pp. 7-12, February 1964.

PRECAUTIONS

vol. IECI-11,

64G Greenburg, R.

DETERMINING MAXIMUM RELIABLE LOAD LINES FOR POWER TRANSISTORS

Motorola Application Note AN137-R1, pp. 1-15, November 1964.

PRECAUTIONS

SPECIFICATIONS

64H Hakim, E. B. , and B. Reich

THE EFFECTS OF NEUTRON RADIATION ON SECONDARY BREAKDOWN

Proc. IEEE, vol. 52, p. 735, June 1964.

CHARACTERISTICS: transistor, radiation.

64M Melchior, H., and M. J. 0. Strutt

SECONDARY BREAKDOWN IN TRANSISTORS

Proc. IEEE, vol. 52, pp. 439-440, April 1964.

THEORY: trigger temperature, SB state.

CHARACTERISTICS: transistor, diode, pulsed, oscillations, design. ^ OBSERVATION: temperature. '

64M1 Melchior, H., and M. J. 0. Strutt

ON THE INITIATION OF SECOND BREAKDOWN IN DIODES AND TRANSISTORS

Scientia Electrica (Switzerland), vol. 10, pp. 139-141, April 1964

THEORY: trigger temperature, thermal, SB state.

CHARACTERISTICS: transistor, diode, multiple levels.

64M2 Mueller, 0.

INTERNAL THERMAL FEEDBACK IN FOUR-POLES ESPECIALLY IN TRANSISTORS

Proc. IEEE, vol. 52, pp. 924-930, August 1964. (pp. 929-930)

OBSERVATION: current distribution.

24
64M3 Miller, J.

AVOIDING STORAGE-TIME PUNCH-THROUGH IN SATURATED PUSH-PULL CIRCUITS

Electronic Design, vol, 12, pp. 72-75, February 17, 1964.

PRECAUTIONS

64M4 Miller, J.

SWEEP TEST PICKS BEST TRANSISTORS TO BAR INDUCTIVE LOAD DAMAGE

Electronic Design, vol. 12, pp. 44-49, October 26, 1964.

CHARACTERISTICS: transistor, swept, oscillations, indicator.

PRECAUTIONS

SPECIFICATIONS: R, test.

64N Naborowski, J. G.

POWER-TIME VOLTAGE TESTING OF TRANSISTORS

Electronic Industr. , vol. 23, pp. 147-151, May 1964. (Fig. 7)

CHARACTERISTICS: transistor, multiple levels.

64P Partridge, J.

ON THE EXTRAPOLATION OF ACCELERATED STRESS CONDITIONS TO NORMAL

STRESS CONDITIONS OF GERMANIUM

Physics of Failure in Electronics, vol. 2, RADC Series in

Reliability, M. F. Goldberg and J. Vaccaro, Eds., 1964, pp. 208-225.

AD 434 329 [2] (pp. 217-225)

PRECAUTIONS

DAMAGE

64P1 Pisarcik, D. A.

DEVELOPMENT TOWARD OPTIMIZING POWER SEMICONDUCTOR DESIGN

Electrical Design News, vol. 9, pp. 58-65, February 1964.

PRECAUTIONS

SPECIFICATIONS: R, test.

64P2 Portnoy, W. M. , and F. R. Gamble

FINE STRUCTURE AND ELECTROMAGNETIC RADIATION IN SECOND BREAKDOWN

IEEE Trans. Electron Devices, vol. ED-11, pp. 470-478, October 1964.

THEORY: non- thermal, SB state.

CHARACTERISTICS: transistor, diode, swept, SB, multiple levels.

OBSERVATION: light.

64R Reich, B., and E. B. Hakim

MAXIMUM COLLECTOR VOLTAGE AND SECONDARY BREAKDOWN IN TRANSISTORS

IEEE Trans. Electron Devices, vol. ED-11, p. 122, March 1964.

THEORY: non- thermal.

CHARACTERISTICS: transistor, design.

OBSERVATION: temperature.

64R1 Reich, B.

NEW ASPECTS OF SECOND BREAKDOWN IN TRANSISTORS

Solid State Design, vol. 5, pp. 23-27, April 1964.

THEORY: thermal, non-thermal.

CHARACTERISTICS: transistor, diode, swept, SB, design, current distribution

OBSERVATION: temperature.

25
64R2 Reich, B., and E. B. Hakim

TRANSISTOR CHARACTERIZATION AND DERATING FOR SECOND BREAKDOWN

Solid State Design, vol. 5, pp. 24-28, May 1964.

THEORY: trigger temperature, SB state.

CHARACTERISTICS: transistor, swept, design, current distribution.

OBSERVATION: temperature.

64R3 Reich, B., and E. B. Hakim . TRADING OFF RADIATION RESISTANCE AND SECOND-BREAKDOWN PERFORMANCE

Electronics, vol. 37, pp. 48-51, October 19, 1964.

CHARACTERISTICS: transistor, design, radiation.

DAMAGE

64S Scarlett, R. M. , and W. Schroen

LOCALIZED THERMAL EFFECTS IN SILICON POWER TRANSISTORS

Physics of Failure in Electronics, vol. 2, RADC Series in Reliability,

M. F. Goldberg and J. Vaccaro, Eds., 1964, pp. 285-303. AD 434 329

[2]

THEORY: instability, SB state.

CHARACTERISTICS: transistor, pulsed, SB, indicator, design, current

distribution, defect.

OBSERVATION: temperature, current distribution.

DAMAGE

6451 Schiff, P.

PREVENTING SECOND BREAKDOWN IN TRANSISTOR CIRCUITS

Electronics, vol. 37, pp. 66-74, June 15, 1964.

CHARACTERISTICS: transistor, pulsed, swept, measurement, indicator, design,

current distribution.

PRECAUTIONS

SPECIFICATIONS

6452 Stickler, M. G.

SECOND BREAKDOWN PHENOMENA IN TRANSISTORS

IEEE Electron Devices Meeting, Washington, D. C, October 1964.

THEORY: charge carriers.

CHARACTERISTICS: transistor.

6453 Schiff, P.

SECOND BREAKDOWN IN TRANSISTORS UNDER CONDITIONS OF CUTOFF

RCA Application Note SMA-30, pp. 1-12, July 1964.

PRECAUTIONS

SPECIFICATIONS: 0, R, use, test.

64W Wang, W. , and J. J. Chang

MAXIMUM PULSE-CURRENT RATINGS AND THERMAL RUNAWAY TEMPERATURES FOR

SILICON DIODES

Semiconductor Prod. Solid State Technol . , vol. 7, pp. 20-25,

January 1964. (pp. 20, 23)

THEORY: trigger temperature.

CHARACTERISTICS: diode, pulsed.

26
64W1 Wheatley, C. F. DESIGN CONSIDERATIONS FOR TRANSISTORIZED TELEVISION DEFLECTION

CIRCUITS PART I Solid State Design, vol. 5, pp. 39-44, October 1964. (-)

PRECAUTIONS

64W2 Wheatley, C. F. DESIGN CONSIDERATIONS FOR TRANSISTORIZED TELEVISION DEFLECTION

CIRCUITS PART II Solid State Design, vol. 5, pp. 38-42, November 1964. (pp. 38-39)

PRECAUTIONS

SPECIFICATIONS: R, test.

64W3 Wolff, K., and F. Weitzsch

RECHNUNGEN ZUM EINSCHNUREFFECT BEI TRANSISTOREN

Valvo Berichte, vol. 10, pp. 357-363, December 1964.

THEORY: pinch

1965

65A Agatsuma, T. , T. Kohisa, and A. Sugiyama

TURNOVER PHENOMENON OF N+NN+ PLATE CONTACT SILICON DEVICE AND

SECOND BREAKDOWN IN TRANSISTORS

Proc. IEEE, vol. 53, p. 95, January 1965.

THEORY: trigger temperature.

CHARACTERISTICS: n+-n-n+, swept.

OBSERVATION: temperature.

65A1 Agatsuma, T.

THE SECOND BREAKDOWN V-I CHARACTERISTICS IN THE TRIPLE DIFFUSED

SI TRANSISTOR

Proc. IEEE, vol. 53, pp. 2142-2143, December 1965.

CHARACTERISTICS: transistor, n+-n-n+, pulsed, swept.

65B Balthasar, P. P.

SELECTING SWITCHING CIRCUIT TRANSISTORS

Electrical Design News, vol. 10, pp. 72-76, November 1965.

CHARACTERISTICS: transistor, indicator.

PRECAUTIONS

SPECIFICATIONS

65B1 Borofsky, A. J., and D. C. Fleming

DESIGN AND PROCESS CONTRIBUTION TO INHERENT FAILURE MECHANISMS

OF MICROMINIATURE ELECTRONIC COMPONENTS FOR MINUTEMAN II Presented at the Physics of Failure in Electronics Symposium

(Co-sponsored by the Rome Air Development Center and the Illinois

Institute of Technology), Chicago, November 1965. (-)

CHARACTERISTICS: transistor, design, defect.

27
65C Chu, T. L., and P. J. Karinam

FAILURE OF LARGE-AREA EPITAXIAL-DIFFUSED SILICON DEVICES

Presented at the Physics of Failure in Electronics, (Co-sponsored

by the Rome Air Development Center and the Illinois Institute of

Technology), Chicago, November 1965. (-)

CHARACTERISTICS: diode, defect.

65F Faust, J. W. , Jr., H. F. John, and R. Stickler

THE ROLE OF MICRODEFECTS IN SILICON STARTING MATERIALS AS OUALITY

REDUCING FACTORS IN SEMICONDUCTOR DEVICES

Presented at the Physics of Failure in Electronics Symposium,

(Co- sponsored by the Rome Air Development Center and the Illinois

Institute of Technology), Chicago, November 1965. (-)

CHARACTERISTICS: transistor, diode, defect.

65G Goryunov, N. N., Yu. A. Ovechkin, A. M. Savchenko, A. V. Stankova,

Ya. A. Tolkacheva, and Yu. F. Feoktistov

INVESTIGATION OF THE SECONDARY BREAKDOWN PHENOMENON IN TRANSISTORS

Radio Engng. Electronic Phys .

, vol. 10, pp. 1139-1141, July 1965.

CHARACTERISTICS: transistors, pulsed, SB, multiple levels, magnetic field.

OBSERVATION: current distribution.

65G1 Gerstner, D.

HF-LEISTUNGSTRANSISTOREN - NEUE ENTWICKLUNGEN MIT TECHNIKEN DER

MIKROELEKTRONIK

Internat. Elektronische Rundschau, vol 9, pp. 495-501, September 1965

THEORY: instability.

CHARACTERISTICS: transistor, ballast, design, current distribution.

SPECIFICATIONS: F, 0.

65H Hakim, E. B., L. K. McSherry, and B. Reich

SOLDER BALL FORMATION IN SILICON ALLOY TRANSISTORS

IEEE Trans. Electron Devices, vol. ED-12, pp. 369-372, June 1965.

CHARACTERISTICS: transistor, design.

PRECAUTIONS

DAMAGE

65H1 Hakim, E. B.

TRANSISTOR-SURFACE ANALYSIS AFTER SECONDARY BREAKDOWN

Proc. IEEE, vol. 53, p. 1226, September 1965.

DAMAGE

65H2 Hakim, E. B., L. K. McSherry, and B. Reich

SOLDER BALL FORMATION IN SILICON ALLOY TRANSISTORS

IEEE International Electron Devices Meeting, Washington, D. C. , October 1965.

DAMAGE

6 5H3 Howarth, D. W.

A SIMPLE TECHNIOUE FOR THE DIRECT OBSERVATION OF TEMPERATURE

DISTRIBUTION IN MICROELECTRONIC STRUCTURES

Presented at the Physics of Failure in Electronics Symposium,

(Co-sponsored by the Rome Air Development Center and the Illinois

Institute of Technology), Chicago, November 1965. [1]

OBSERVATION: temperature, current distribution.

28
65H4 Haitz, R. H.

MECHANISMS CONTRIBUTING TO THE NOISE PULSE RATE OF AVALANCHE DIODES

J. Appl. Phys., vol. 36, pp. 3123-3131, October 1965. (pp. 3127-

3129)

THEORY: thermal, SB state.

CHARACTERISTICS: diode, swept, oscillation.

OBSERVATION: temperature.

DAMAGE

65H5 Hakim, E. B., L. K. McSherry, and B. Reich

SOLDER BALL FORMATION IN SILICON ALLOY TRANSISTORS

Proc. IEEE, vol. 53, p. 389, April 1965.

CHARACTERISTICS: transistor, design.

PRECAUTIONS

DAMAGE

65H6 Hakim. E. B.

HOT SPOT MESOPLASMA FORMATION IN SILICON PLANAR TRANSISTORS

Presented at the Physics of Failure in Electronics Symposium,

(Co-sponsored by the Rome Air Development Center and the Illinois

Institute of Technology), Chicago, November 1965.

CHARACTERISTICS: transistor, SB.

OBSERVATION: light.

DAMAGE

65J Josephs, H. C.

A SIMPLE MODEL FOR SECOND BREAKDOWN

Proc. IEEE, vol. 53, p. 1225, September 1965.

THEORY: mechanisms.

65J1 Josephs, H. C.

THE EFFECT OF FREE CHARGE ON COLLECTOR MULTIPLICATION

Proc. IEEE, vol. 53, pp. 1732-1733, November 1965.

THEORY: pinch, charge carriers.

65P Perkins, C.

BREAKDOWN PHENOMENA IN SILICON SEMICONDUCTOR DEVICES

Semiconductor Prod. Solid State Technol., vol. 8, pp. 32-37,

February 1965. (pp. 36-37)

CHARACTERISTICS: transistor, swept, SB, current distribution.

65P1 Peterman, D. A.

THERMOPHYSICS OF SILICON POWER TRANSISTORS

Presented at the Physics of Failure in Electronics Symposium,

(Co-sponsored by the Rome Air Development Center and the Illinois

Institute of Technology), Chicago, November 1965. (-)

OBSERVATION: temperature, current distribution.

65R Reich, B., and E. B. Hakim

AN EXPLANATION OF THE ENERGY DEPENDENCE OF SECONDARY BREAKDOWN IN

TRANSISTORS

Proc. IEEE, vol. 53, pp. 624-625, June 1965.

THEORY: trigger temperature.

CHARACTERISTICS: transistor, swept.

OBSERVATION: temperature.

29
65R1 Resch, W.

POWER RATING OF TRANSISTORS FOR PULSED OPERATION

Electro-Technology, (New York), vol. 76, pp. 86-88, November 1965. (-)

SPECIFICATIONS: F, 0, R, test.

65R2 Rosenzweig, R. , and D. R. Carley

DESIGN OF A VllF POWER TRANSISTOR WITH SECOND-BREAKDOWN PROTECTION

IEEE International Electron Devices Meeting, Washington, D. C.

,

October 1965.

CHARACTERISTICS: transistor, ballast, design, current distribution.

OBSERVATION: current distribution.

65R3 RCA

HO'lETAXIAL-BASE SILICON POWER TRANSISTORS

RCA Application Note HBT-400, pp. 1-4, December 1965.

CHARACTERISTICS: transistor, pulsed, swept, design, current distribution.

SPECIFICATIONS

65S Schafft, H. A., and J. C. French

BREAKDOWN CHARACTERISTICS OF SEMICONDUCTOR MATERIALS

Electro-Technology, (New York), vol. 75, pp. 77-82, June 1965.

PRECAUTIONS

SPECIFICATIONS

SURVEY: characteristics, specifications.

6551 Schroen, W. , J. Beaudouin, and K. Hubner

FAILURE MECHANISMS IN HIGH POWER FOUR-LAYER DIODES

Physics of Failure in Electronics, vol. 3, RADC Series in

Reliability, M. F. Goldberg and J. Vaccaro, Eds., 1965, pp. 389-403.

AD 617 715 [2] (pp. 295-398)

THEORY: instability.

CHARACTERISTICS: p-n-n-n, design, defect.

DAMAGE

6552 Seneret , J.

UTILISATION DES TRANSISTORS DE PUISSANCE EN VHF

Onde Elect., vol. 45, pp. 311-317, March 1965.

CHARACTERISTICS: transistor, swept.

PRECAUTIONS

6553 Schroen, W. , and W. W. Hooper

FAILURE MECHANISMS IN SILICON SEMICONDUCTORS

Shockley Research Labs., Palo Alto, Calif., Final Rept., Contract

AF30(602)-3016, March 1965. AD 615 312 [2] (pp. 1-125)

THEORY: instability, SB state.

CHARACTERISTICS: transistor, diode, pulsed, design, defect.

OBSERVATION: temperature, current distribution.

DAMAGE

6554 Stolnitz, D.

ELIMINATION OF FORWARD-BIASED SECOND BREAKDOWN BY RESISTIVE BALLASTING

OF SILICON POWER TRANSISTORS

Presented at the Physics of Failure in Electronics Symposium,

(Co-sponsored by the Rome Air Development Center and the Illinois

Institute of Technology), Chicago, November 1965.

CHARACTERISTICS: transistor ,' ballast , current distribution.

OBSERVATION: current distribution.

30
i65T Takagi, K. , and K. Mano

TRANSIENT JUNCTION TEMPERATURE RISE AND FAILURE ENERGY OF TRANSISTORS

J. Inst. Elect. Commun. Engrs . Japan, vol. 48, pp. 33-41,

October 1965.

THEORY: thermal.

CHARACTERISTICS: transistor, pulsed, swept, measurement, design, current

distribution, defects.

OBSERVATION: temperature.

DAMAGE

65T1 Tatum, J. G.

CIRCUIT IMPROVEMENTS UTILIZING THE NEW RESISTOR STABILIZED VHF

POWER TRANSISTOR

Proc. Nat. Electronics Conf . , vol. 21, 1965, pp. 73-78.

CHARACTERISTICS: transistor, ballast.

PRECAUTIONS

65V Van Wyk, J. D. RECOMBINATION EMISSION FROM SILICON TRANSISTORS

Proc. IEEE, vol. 53, pp. 307-308, March 1965. (-)

OBSERVATIONS: light.

65W Weitzsch, F. ZUR THEORIE DES ZWEITEN DURCHBRUCHS BEI TRANSISTOREN

Arch. Elekt. Ubertragung, vol. 19, pp. 27-42, January 1965.

THEORY

SURVEY: theory.

65W1 Wheatley, C. F.

DESTRUCTIVE CIRCUIT MALFUNCTIONS AND CORRECTIVE TECHNIQUES IN

HORIZONTAL DEFLECTION

IEEE Trans. Broadcast Televis. Receivers, vol. BTR-11, pp. 102-111,

July 1965. (-)

PRECAUTIONS

- 1966 -

66A Agatsuma, T.

SECOND BREAKDOWN PHENOMENON OF POINT CONTACT NN* SI WAFERS

Proc. IEEE, vol. 54, pp. 1206-1207, September 1966.

CHARACTERISTICS: point contact, pulsed, swept, design.

66A1 Agatsuma, T.

A CHARACTERIZATION TECHNIQUE FOR SECOND BREAKDOWN IN GE ALLOYED

JUNCTION TRANSISTORS

IEEE Trans. Electron Devices, vol. ED-13, pp. 648-650, August/

September 1966.

CHARACTERISTICS: transistor, swept.

SPECIFICATION: 0.

31
66A2 Agatsuma, T. ' TURNOVER PHENOMENA IN NVN SILICON DEVICES AND SECOND BREAKDOWN

IN TRANSISTORS ' IEEE Trans. Electron Devices, vol. ED-13, pp. 748-753, November 1966.

THEORY: trigger temperature.

CHARACTERISTICS: transistor, n'*"-n-n"*', pulsed, swept.

OBSERVATION: temperature, current distribution.

66A3 Anupyl'd, A. Yu.

ON SECOND BREAKDOWN AND RELAXATION OSCILLATIONS IN POINT-CONTACT

DIODES

Radio Engng. Electronic Phys . , vol. 11, pp. 837-839, May 1966.

CHARACTERISTICS: point contact, pulsed, swept, multiple levels, oscillations

66A4 Asakawa, T. , and N. Tsubouchi

SECOND BREAKDOWN IN MOS TRANSISTORS

IEEE Trans. Electron Devices, vol. ED-13, pp. 811-812, November 1966.

CHARACTERISTICS: MOS, swept.

OBSERVATION: light.

66B Balthasar, P. P.

AVOID POWER TRANSISTOR FAILURE! USE THESE APPLICATION-ORIENTED

GUIDELINES TO ESTABLISH THE DEVICE'S SAFE OPERATING AREA (SOAR)

Electronic Design, vol. 14, pp. 52-56, August 2, 1966.

PRECAUTIONS

SPECIFICATIONS: F, use, test.

66B1 Balthasar, P. P.

CUT TRANSISTOR-REPLACEMENT COSTS DUE TO DEVICE FAILURE. USE SAFEOPERATING-AREA PRINCIPLES TO DESIGN POWER-TRANSISTOR SWITCHING

CIRCUITS

Electronic Design, vol. 14, pp. 192-197, August 16, 1966.

PRECAUTIONS

SPECIFICATIONS ' ;

66B2 Bergmann, F. , and D. Gerstner

SOME NEW ASPECTS OF THERMAL INSTABILITY OF THE CURRENT DISTRIBUTION

IN POWER TRANSISTORS

IEEE Trans. Electron Devices, vol. ED-13, pp. 630-634, August/

September 1966.

THEORY: instability.

CHARACTERISTICS: transistor, ballast, design, current distribution.

SPECIFICATIONS: F, 0.

66B3 Bolvin, R. SECOND-BREAKDOWN TESTING NEED NOT BE DESTRUCTIVE

Electronic Design, vol. 14, p. 66, August 30, 1966.

SPECIFICATIONS: 0, test.

66B4 Brown, H. E., R. A. Bond, and J. C. Bloomauist

AVALANCHE TRANSISTORS DRIVE LASER DIODES HARD AND FAST

Electronics, vol. 39, pp. 137-139, November 14, 1966. (-)

APPLICATION

32
66C Caldwell, R. S., W. C. Bowman, and J. A. Folsom

MECHANISM FOR RADIATION- INDUCED LATCHUP IN A MICROCIRCUIT

Northeast Electronic Research Engineering Meeting Record, (Boston,

Mass.). vol. 8, pp. 28-29, November 1966.

CHARACTERISTICS: transistor, radiation.

PRECAUTIONS

66E Egawa, H.

AVALANCHE CHARACTERISTICS AND FAILURE MECHANISM OF HIGH VOLTAGE

DIODES

IEEE Trans. Electron Devices, vol. ED-13, pp. 754-758, November 1966

THEORY: charge carriers, SB state.

CHARACTERISTICS: diode, pulsed, SB, oscillations, design.

DAMAGE

66E1 English, A. C.

PHYSICAL INVESTIGATION OF THE MESOPLASMA IN SILICON

IEEE Trans. Electron Devices, vol. ED-13, pp. 662-667, August/

September 1966.

THEORY: SB state.

CHARACTERISTICS: diode, SB, multiple levels, design.

OBSERVATION: light.

66F Fujinuma, K. TRANSISTOR FAILURE BY SECONDARY BREAKDOWN

IEEE Trans. Electron Devices, vol. ED-13, pp. 651-655, August/

September 1966. (Correction in IEEE Trans. Electron Devices, vol.

ED-14, p. 170, March 1967.)

THEORY: instability.

CHARACTERISTICS: transistor, pulsed, swept.

PRECAUTIONS

SPECIFICATIONS: R, test.

66F1 Ferry, D. K. , and A. A. Dougal

INPUT POWER INDUCED THERMAL EFFECTS RELATED TO TRANSITION TIME

BETWEEN AVALANCHE AND SECOND BREAKDOWN IN P-N SILICON JUNCTIONS

IEEE Trans. Electron Devices, vol. ED-13, pp. 627-629, August/

September 1966.

THEORY: thermal.

CHARACTERISTICS: transistor, diode, pulsed, multiple levels.

DAMAGE

66G Grutchfield, H. B., and T. J. Moutoux

CURRENT MODE SECOND BREAKDOWN IN EPITAXIAL PLANAR TRANSISTORS

IEEE Trans. Electron Devices, vol. ED-13, pp. 743-748, November 1966

THEORY: pinch, charge carriers.

CHARACTERISTICS: transistor, pulsed, oscillations, design.

66H Huenemann, R. G.

TRANSISTOR DEGRADATION FOLLOWING SECOND BREAKDOWN

IEEE Trans. Electron Devices, vol. ED-13, p. 605, July 1966.

DAMAGE

33
66H1 Hakim, E. B.

THE APPLICATION OF MOLYBDENUM CONTACTS FOR IMPROVED SECOND

BREAKDOWN PERFORMANCE

Proc. IEEE, vol. 54, pp. 880, June 1966.

CHARACTERISTICS: transistor, design.

DAMAGE

66H2 Harmon, G. G.

AVALANCHE RADIATION FROM THE BULK OF LONG, THIN, FORWARD-BIASED

P*-P-N+ SILICON DIODES

Appl. Phys. Letters, vol. 9, pp. 207-209, September 1, 1966. (p. 208)1

THEORY: non-thermal.

66J Josephs, H. C.

ANALYSIS OF SECOND BREAKDOWN IN TRANSISTORS USING A SIMPLE MODEL

IEEE Trans. Electron Devices, vol. ED-13, pp. 778-787, November 1966.

THEORY

CHARACTERISTICS: transistor, swept, SB, multiple levels, measurement,

design.

66K Khurana, B. S. , T. Sugano, and H. Yanai

THERMAL BREAKDOWN IN SILICON P-N JUNCTION DEVICES

IEEE Trans. Electron Devices, vol. ED-13, pp. 763-770, November 1966.

THEORY: trigger temperature, thermal, SB state.

CHARACTERISTICS: transistor, diode, swept, SB, design.

66L Lewis, E. T.

A PHYSICAL EXPLANATION OF SECONDARY BREAKDOWN IN TRANSISTORS

Proc. IEEE, vol. 54, pp. 788-789, May 1966.

THEORY: non- thermal.

CHARACTERISTICS: transistor, swept, defect.

DAMAGE

66L1 Lohrmann, D. R.

PARAMETRIC OSCILLATIONS IN VHF TRANSISTOR POWER AMPLIFIERS

Proc. IEEE, vol. 54, pp. 409-410, March 1966. (-)

CHARACTERISTICS: transistor, oscillations.

66M Matyckas , S.

RF POWER TRANSISTORS IN VEHICULAR RADIO CONmUNICATIONS EQUIPMENT

IEEE Wescon Conv. Record, vol. 10, pt . 8.1, pp. 1-5, 1966. (-)

PRECAUTIONS

66N Neve, N. F. B.. D. V. Sulway, K. A. Hughes, and P. R. Thornton

THE SCANNING ELECTRON MICROSCOPE AS A MEANS OF INVESTIGATING SECOND

BREAKDOWN AND SIMILAR PHENOMENA

IEEE Trans. Electron Devices, vol. ED-13, pp. 639-642, August/

September 1966. (p. 642)

OBSERVATION: current distribution.

34
o6Nl Nienhuis, R. J.

SECOND BREAKDOWN IN THE FORWARD AND REVERSE BASE CURRENT REGION

IEEE Trans. Electron Devices, vol. ED-13, pp. 655-662, August/

September 1966.

CHARACTERISTICS: transistor, pulsed, multiple levels, indicator, ballast,

design, current distribution.

66N2 Newman, R. A.

SAFE OPERATION WITH HIGH VOLTAGE TRANSISTORS

Proc. Nat. Electronics Con£. , vol. 22, pp. 139-143, 1966.

PRECAUTIONS

SPECIFICATIONS

66N3 Novo, D. Domingues, and M. Corazza

DISPOSITIF D' ETUDE DU PHENOMENE DE DEUXIEME AVALANCHE DANS LES

TRANSISTORS (STUDY OF SECONDARY BREAKDOWN IN TRANSISTORS)

Electronics Letters, vol. 2, pp. 217-218, June 1966.

CHARACTERISTICS: transistor, pulsed, measurement.

660 Oda, H.

THE AREA OF SAFE OPERATION OF TRANSISTORS FOR SWITCHING OPERATION

IEEE Trans. Electron Devices, vol. ED-13, pp. 776-777, November 1966

THEORY: thermal.

CHARACTERISTICS: transistor, pulsed.

SPECIFICATIONS: F.

66P Peterman, D. A., and H. R. Plumlee

INFRARED MICRORADIOMETER STUDIES OF OPERATING POWER TRANSISTORS

IEEE International Electron Devices Meeting, Washington, D. C.

,

October 1966.

THEORY: interaction.

CHARACTERISTICS: transistor, design, current distribution, defect.

OBSERVATION: current distribution'.

66P1 Plumlee, H. R. , and D. A. Peterman

ACCURACY OF JUNCTION TEMPERATURE MEASUREMENT IN SILICON POWER

TRANSISTOR

IEEE International Electron Devices Meeting, Washington, D. C.

,

October 1966. (-)

CHARACTERISTICS: transistor.

OBSERVATION: temperature, current distribution.

66R Reich, B., and E. B. Hakim

SECONDARY BREAKDOWN THERMAL CHARACTERIZATION AND IMPROVEMENT OF

SEMICONDUCTOR DEVICES

IEEE Trans. Electron Devices, vol. ED-13, pp. 734-737, November 1966

CHARACTERISTICS: transistor, diode, swept, indicator, design.

OBSERVATION: temperature.

35
66R1 Reich, B.

ADVANCES IN DISCRETE SEMICONDUCTOR DEVICES

Semiconductor Prod. Solid State Technol., vol. 9, pp. 19-26,

February 1966. (pp. 20-21)

CHARACTERISTICS: transistor, ballast, design.

SPECIFICATION: F, 0.

o6R2 Reich, B.

FACTORS AFFECTING TRANSISTOR FAILURE

Electro-Technology, (New York), vol. 78, pp. 43-44, December 1966.

PRECAUTIONS

66R3 Richards, N. C, and F. A. Barton

APPLICATION OF OVERLAY TRANSISTORS TO SOLID STATE MOBILE EQUIPMENT

IEEE Wescon Conv. Record, vol. 10, pt, 8.2, 1966, pp. 1-6. (-)

PRECAUTIONS

66R4 Rogers, J. D. , and J. J. Wormser

SOLID-STATE HIGH -POWER LOW- FREQUENCY TELEMETRY TRANSMITTERS

Proc. Nat. Electronics Conf . , vol. 22, pp. 171-176, 1966. (-)

PRECAUTIONS

66S Schafft, H. A.

AVOIDING SECOND BREAKDOWN

Presented at the Xlllth International Scientific Congress on Electronics, sponsored by Rassegna Internazionale Elettronica,

Nucleare E Teleradiocinematografica , Rome, June 1966.

PRECAUTIONS

SPECIFICATIONS

SURVEY: characteristics, specifications.

66S1 Schafft, H. A., G. H. Schwuttke, and R. L. Ruggles, Jr.,

SECOND BREAKDOWN AND CRYSTALLOGRAPHIC DEFECTS IN TRANSISTORS

IEEE Trans. Electron Devices, vol. ED-13, pp. 738-742, November 1966

CHARACTERISTICS: transistor, pulsed, SB, design, current distribution,

defect

DAMAGE

6652 Schafft, H. A., and J. C. French

SECOND BREAKDOWN AND CURRENT DISTRIBUTIONS IN TRANSISTORS

Solid-State Electronics, vol. 9, pp. 681-688, July 1966.

THEORY: interaction, SB state.

CHARACTERISTICS: transistor, pulsed, SB, multiple levels, design, current

distribution, defect.

OBSERVATION: current distribution.

6653 Schafft, H. A., and J. C. French

A SURVEY OF SECOND BREAKDOWN

IEEE Trans. Electron Devices, vol. ED-13, pp. 613-618, August/

September 1966.

SURVEY

36
6654 Schiff, P., and R. L. Wilson

DETECTION TECHNIQUES FOR NONDESTRUCTIVE SECOND BREAKDOWN TESTING

IEEE Trans. Electron Devices, vol. ED-13, pp. 770-776, November 1966.

CHARACTERISTICS: transistor, measurement, oscillations, indicator.

OBSERVATION: temperature.

SPECIFICATIONS: F, 0, R, test.

6655 Schneer, G. H. , and L. H. Holschwandner

SECOND BREAKDOWN AND DEGRADATION IN GERMANIUM ALLOY JUNCTIONS

IEEE Trans. Electron Devices, vol. ED-13, pp. 806-810, November 1966.

THEORY: thermal, non- thermal.

CHARACTERISTICS: transistor, swept, measurement, design.

DAMAGE

6656 Schroen, W. , and R. M. Scarlett

SECOND BREAKDOWN IN SIMPLIFIED TRANSISTOR STRUCTURES AND DIODES

IEEE Trans. Electron Devices, vol. ED-13, pp. 619-626, August/

September 1966.

THEORY: instability, SB state.

CHARACTERISTICS: transistor, diode, pulse, measurement, indicator, ballast,

design, current distribution, defect.

OBSERVATION

DAMAGE

6657 Steffe, W. , and J. LeGall

THERMAL SWITCHBACK IN HIGH F^ EPITAXIAL TRANSISTORS

IEEE Trans. Electron Devices, vol. ED-13, pp. 635-638, August/

September, 1966.

CHARACTERISTICS: transistor, ballast, design, current distribution.

6658 Stolnitz, D. EXPERIMENTAL DEMONSTRATION AND THEORY OF A CORRECTIVE TO SECOND

BREAKDOWN IN SI POWER TRANSISTORS

IEEE Trans. Electron Devices, vol. ED-13, pp. 643-648, August/

September 1966.

CHARACTERISTICS: transistor, swept, indicator, ballast.

OBSERVATION: current distribution.

66T Takagi, K. , and K. Mano

TRANisiENT TEMPERATURE RISE OF P-N JUNCTION AND ITS APPLICATION FOR

THE DETERMINATION OF THE ALLOWABLE POWER OF TRANSISTORS

Scientific Reports of the Research Institute of Tohoku University,

B - (Electrical Communication), vol. 18, pp. 29-47, January 1966.

THEORY: thermal.

CHARACTERISTICS: transistor, pulsed, measurement.

OBSERVATION: temperature.

66T1 Takagi, K. , and K. Mano

TRANSIENT JUNCTION TEMPERATURE RISE AND SECOND BREAKDOWN IN

TRANSISTORS

IEEE Trans. Electron Devices, vol. ED-13, pp. 759-763, November 1966.

THEORY: thermal, pinch.

CHARACTERISTICS: transistor, pulsed, SB, measurement, design.

OBSERVATION: temperature.

37
66V Vahle, R. W.

GERMANIUM TRANSISTOR RATINGS FOR SECOND BREAKDOWN RELIABILITY

Proc. Nat. Electronics Conf . , vol. 22, pp. 144-149, 1966.

CHARACTERISTICS: transistor, indicator, current distribution.

SPECIFICATIONS

66W Weitzsch, F.

A DISCUSSION OF SOME KNOWN PHYSICAL MODELS FOR SECOND BREAKDOWN

IEEE Trans. Electron Devices, vol. ED-13, pp. 731-734, November 1966

THEORY: trigger temperature, thermal, pinch, non-thermal, SB state.

- 1967 -

67E Electro-Technology

POWER TRANSISTORS

Electro-Technology (New York), vol. 80, pp. 83-86, August 1967.

(pp. 85-86)

CHARACTERISTICS: transistor, design.

SPECIFICATIONS: F, use, test.

67G Gerstner, D.

SCHUTZMASSNAHEM GEGEN DEN 2. DURCHBRUCH IN LEISTUNGTRANSISTOREN

Europaische Tagung. Forschung auf dem Gebiet der Halpleiter - Bauelemente, Bad Nauheim, April 1967.

CHARACTERISTICS: transistor, swept, measurement.

PRECAUTIONS

67H Hakim, E. B.

SECOND BREAKDOWN GIVES FAST PULSES

EEE - The Magazine of Circuit Design Engineering, vol. 15,

pp. 166-167, March 1967. (Title interchanged with one for a paper

on page 162.)

APPLICATION

67H1 Hamiter, L.

INFRARED TECHNIQUES FOR THE RELIABILITY ENHANCEMENT OF

MICROELECTRONICS

Semiconductor Prod, Solid State Technol., vol. 10, pp. 41-49, March1967. (-)

OBSERVATION: temperature, current distribution.

67H2 Hower, P. L., and V. G. K. Reddi

AVALANCHE SECOND BREAKDOWN IN TRANSISTORS

Physics of Failure in Electronics, vol. 5, RADC Series in

Reliability, T. S. Shilliday and J. Vaccaro, Ed., 1967, p. 557.

AD 65 5 39 7 [2]

THEORY: charge carriers, non-thermal.

CHARACTERISTICS: transistor, n+-n-n+, design.

67K Kannam, P. J.. F. G. Ernick, and J. Marino

SECONDARY BREAKDOWN CAPABILITY OF EPITAXIAL TRANSISTORS

J. Electrochem. Soc, vol. 114, p. 63C, March 1967.

CHARACTERISTICS: transistor, design.

38
67M Minton, R. DESIGN TRADE-OFFS FOR R-F TRANSISTOR POWER AMPLIFIERS

EE The Electronic Engineer, vol. 26, March, 1967. (-)

CHARACTERISTICS: transistor, swept.

PRECAUTIONS

67M1 Marshall, S. L. SECOND BREAKDOWN IN TRANSISTORS

Semiconductor Prod. Solid State Technol . , vol. 10, p. 25, March 1967.

(Editorial Comment)

SURVEY: theory, specifications.

67M2 Miller, E. A.

ANALYSIS OF THERMAL INSTABILITIES IN POWER TRANSISTOR STURCTURES

M. S. Thesis, Massachusetts Institute of Technology, Boston,

Mass., pp. 1-115, June 1967.

THEORY: instability.

CHARACTERISTICS: transistor, pulsed, design, current distribution.

67N Nowakowski, M. F. , and F. A. Laracuente

INFRARED PINPOINTS SECOND BREAKDOWN BEFORE FAILURE

IEEE International Convention Record, vol. 15, pt . 14, pp. 87-94, 1967

CHARACTERISTICS: transistor, swept.

OBSERVATION: temperature, current distribution.

67P Peterman, D. , and W. Workman

INFRARED RADTOMETRY OF SEMICONDUCTOR DEVICES

IEEE International Convention Record, vol. 15, pt. 14, pp. 78-86, 1967

(-)

OBSERVATION: temperature, current distribution.

67S Steffe, W. C.

SECONDARY BREAKDOWNS IN POWER TRANSISTORS AND CIRCUITS

IEEE International Convention Record, vol. 15, pt. 6, pp. 20-24, 1967.

THEORY: instability, pinch, charge carriers.

CHARACTERISTICS: transistor, swept, indicator, ballast, design.

PRECAUTIONS

DAMAGE

6751 Schafft, H. A.

SECOND BREAKDOWN - A COMPREHENSIVE REVIEW

Proc. IEEE, vol. 55, pp. 1272-1288, August 1967.

SURVEY

6752 Scarlett, R. M. , and G. F. Hardy

SECOND BREAKDOWN IN SILICON POWER TRANSISTORS AT HIGH COLLECTOR

VOLTAGE

Physics of Failure in Electronics, vol 5, RADC Series in Reliability,

T. S. Shilliday and J. Vaccaro, Ed., 1967, pp. 424-443. AD 655 397

[2]

THEORY: instability, pinch, charge carriers, non- thermal, interaction.

CHARACTERISTICS: transistor, swept, oscillations, design, current

distribution, defect.

39
6753 Schenck, J. F. PROGRESSIVE FAILURE MECHANISMS OF A COMMERCIAL SILICON DIODE

Physics of Failure in Electronics, vol. 5, RADC Series in Reliability

T. S. Shilliday and J. Vaccaro, Ed., 1967, pp. 18-35. AD 655 397

[2] (pp. 20-21)

DAMAGE

6754 Smith, H. S.

SWITCH HIGH LOADS WITH POWER TRANSISTORS BY KNOWING ALL ABOUT

SECONDARY BREAKDOWN, DEVICE SELECTION, AND METHODS OF ANALYSIS AND

DESIGN

Electronic Design, vol. 15, pp. 224-233, August 16, 1967. (pp. 225-

229)

CHARACTERISTICS: transistor, pulsed, swept.

PRECAUTIONS

SPECIFICATIONS: F.

DAMAGE

67T Turner, C.

CARL TURNER OF RCA EXPLORES SELECTION OF SECOND-BREAKDOWN-RESISTANT

TRANSISTORS

EEE; The Magazine of Circuit Design Engineering, vol. 15, pp. 82-95,

July 1967.

PRECAUTIONS

SPECIFICATIONS

67V Vahle, R. W.

SECOND-BREAKDOWN TESTS FOR GERMANIUM-TRANSISTOR RELIABILITY

Electro-Technology (New York), vol. 80, pp. 54-57, August 1967.

PRECAUTIONS

SPECIFICATIONS: R, test.

6 7W Wheat ley, C. F.

THERjMAL regeneration IN POWER-DISSIPATING ELEMENTS

EE, The Electronic Engineer (formerly Electronic Industries),

vol. 26, pp. 54-60, January 1967. (pp. 59-60)

THEORY: thermal.

CHARACTERISTICS: transistor, design, current distribution, defect.

67W1 Winkler, R. H.

THERMAL PROPERTIES OF HIGH-POWER TRANSISTORS

IEEE Trans. Electron Devices, vol. ED-14, pp. 260-263, May 1967. (-)

OBSERVATION: temperature.

i-V.S. GOVERNMENT PRINTING OFFICE: 1 967 —301 -020All

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