NBSIR 87-3652

.Research Information Center

National bureau of Standards

Gaithersburg, Maryland 20899

NOV 2 1937

Surveillance of Accredited

Laboratories Under Procedures of the

National Voluntary Laboratory

Accreditation Program (NVLAP)

Harvey W. Berger

U.S. DEPARTMENT OF COMMERCE

National Bureau of Standards

Associate Director of Industry

and Standards

Gaithersburg, MD 20899

September 1987

NATIONAL BUREAU OF STANDARDS

U.S. DEPARTMENT OF COMMERCE

NBSIR 87-3652

SURVEILLANCE OF ACCREDITED

LABORATORIES UNDER PROCEDURES OF THE

NATIONAL VOLUNTARY LABORATORY

ACCREDITATION PROGRAM (NVLAP)

Harvey W. Berger

U.S. DEPARTMENT OF COMMERCE

National Bureau of Standards

Associate Director of Industry

and Standards

Gaithersburg, MD 20899

September 1987

U.S. DEPARTMENT OF COMMERCE, Clarence J. Brown, Acting Secretary

NATIONAL BUREAU OF STANDARDS, Ernest Ambler, Director

Surveillance of Accredited Laboratories Under Procedures of the National

Voluntary Laboratory Accreditation Program (NVLAP)

by

Harvey W. Berger, Manager

Laboratory Accreditation

National Bureau of Standards

The National Bureau of Standards accredits testing laboratories that meet

accreditation criteria, for specific test methods or types of tests, developed

under the procedures of the National Voluntary Laboratory Accreditation

Program (NVLAP). A laboratory which meets the specified NVLAP criteria is

deemed to be "competent" to perform the test methods for which it is

accredited

An important issue which must concern all accrediting agencies, including

NVLAP, is demonstration of the continued maintenance of a laboratory's

competence. Has the laboratory continued to comply with the accreditation

criteria a day, week, or six months after the initial determination of

competence? The quality and reputation of any laboratory accreditation

system relies, in large part, on the measures it takes to assure continuing

compliance by a laboratory to all requisite conditions throughout the period

of its accreditation.

Since NVLAP is not supported by appropriated funds, it is fully dependent on

fees paid by participating laboratories to carry out the functions necessary

to confer and continue accreditation. The nature, extent, and frequency of

on-site assessments, proficiency testing, and other incurring functions must

be balanced against the ability and willingness of laboratories to bear those

costs .

There is no practical means for completely assuring day-to-day compliance with

accreditation criteria after initial accreditation. NVLAP therefore relies on

three mechanisms, described below, to gather information about laboratory

performance. They serve as a basis for a reasonable degree of confidence that

an accredited laboratory continues to perform at an acceptable level with

reference to the NVLAP criteria.
1. Proficiency testing is a major element of NVLAP' s accreditation process.

Successful results of proficiency testing are a condition of continuing

accreditation in all programs. The requirements of the programs vary,

depending on opportunities , costs, difficulty in performing specific tests;

availability of test artifacts, cooperation of other organizat ions (such as standards committees), and other external factors. Several programs call for

two "rounds" of testing annually; some are implemented more frequently; others

less frequently. The dosimetry program requires proficiency testing prior to

initial accreditation and once every two years thereafter, but a testing

sequence is performed over a 3-month period.

The results of an individual laboratory's proficiency testing provide an indication of the laboratory's overall ability to carry out a specific test

method. If a laboratory's performance is an outlier compared with the group

mean, or if it fails to meet a pass/fail criterion, the precise nature of the

testing problem cannot be pinpointed. However, unsatisfactory performance

clearly indicates that the laboratory is not competent to perform the test

method. If the causes of unsatisfactory proficiency testing can be easily

determined and are corrected, NVLAP takes no further action with regard to the

laboratory's accreditation. Failure to identify the causes, or inability to

resolve related problems through discussion between NVLAP and laboratory

staff, necessitates special proficiency tests, a special on-site assessment

geared particularly to resolving the testing problems, or suspension of the

laboratory's accreditation for the pertinent test methods.

2. Regularly scheduled on-site assessments are performed biennially after

initial accreditation. NVLAP uses technical experts, as peer assessors, who

are very knowledgeable in the applicable fields of testing and have experience

in testing and laboratory management. Assessors are assigned so that they do

not visit the same laboratory twice in succession. Prior to a laboratory

visit, NVLAP provides the assessor with copies of previous assessment reports,

applications, proficiency testing results, and any correspondence relevant to

the laboratory's testing performance. During regularly scheduled assessments,

emphasis is placed on review of areas in which the laboratory had previous

deficiencies or difficulties in proficiency testing.

NVLAP also performs monitoring visits on a random or opportunistic basis
(e.g., when travelling for other purposes to a location near an accredited

laboratory), or to assure that a laboratory has resolved serious deficiencies

or proficiency testing problems.

3. The laboratory's own quality assurance system is a reflection of its

commitment to competent testing and good laboratory practices. Conscientious

implementation, by the laboratory, of its own QA system is NVLAP's greatest assurance that the laboratory is performing quality testing on a day-to-day

basis. NVLAP criteria address quality system requirements in both general and

specific terms. NVLAP assessors carefully review quality assurance manuals

and related documents; they evaluate management and staff use the manuals and

their implementation of the QA system. The absence or inadequacy of quality

system documentation constitutes a major deficiency which must be resolved

before initial accreditation. Evidence that a laboratory is not fully

implementing its own QA system may be grounds for suspension or termination of

accreditation.

The community of testing laboratories and their clients is an informal

mechanism that assists NVLAP in monitoring continuing compliance of

laboratories with the criteria for accreditation. Laboratories inform NVLAP

when their competitors make inappropriate claims or act in a manner which

might be a violation of NVLAP criteria. These alleged violations most often

relate to advertising, use of the NVLAP logo, and issuance of test reports

implying product certification or approval. On occasion, test data reported

by a NVLAP-accred i ted laboratory have been challenged by another laboratory.

NVLAP has responded by carrying out appropriate reviews by technical experts

and conducting investigations necessary to determine if laboratory testing

competence was the underlying cause of the complaint.

NVLAP must continually strike a balance between actions to assure continued

competence of participating laboratories and the costs of those actions.

Participating laboratories must meet the attendant costs of accreditation.

The program, therefore, tends to attract laboratories which are committed to

maintaining their reputations for high quality testing. Experience has shown

that after any significant technical or documentary deficiencies are identified during the initial on-site assessment, and they are resolved, the

Laboratories maintain an ongoing high level of compliance. Wide discrepancies
in proficiency testing more often results from limitations in the test methods

than from inadequate performance by the laboratories.

With the single exception of the dosimetry program, NVLAP grants accreditation

on an annual basis. Yearly reaccreditation contributes significantly to the

surveillance process since the submittal of an application by the laboratory

affords NVLAP an opportunity to review administrative and technical

information provided by the laboratory. Laboratory management attests, by

signature, that it continues to be in compliance with the NVLAP accreditation

criteria. The annual payment of fees is further affirmation of laboratory

management's serious commitment to accreditation.

Laboratories that seek, gain, and maintain NVLAP accred i tat ion highly value

that accreditation. They insist that NVLAP conduct its programs to ensure

that only highly qualified laboratories obtain accreditation and, with few

exceptions, make sincere efforts to comply with the accreditation criteria.

That attitude is the most reliable mechanism for assuring continuing

competence of accredited laboratories.
4BS-114A irev. 2 -eci U.S. DEPT. OF COMM. BIBLIOGRAPHIC DATA

N SHEET (See instructions)

1. PUBLICATION OR

REPORT NO.

2. Performing Organ. Report No. 3. Publication Date

NBSIR 87-3652 SEPTEMBER 1987

4. TITLE AND SUBTITLE

Surveillance of Accredited Laboratories Under Procedures of the

National Voluntary Laboratory Accreditation Program (NVLAP)

5. AUTHQR(S) Harvey W. Berger

6. PERFORMING ORGANIZATION (If joint or other than N BS. see instructions)

NATIONAL BUREAU OF STANDARDS -

U.S. DEPARTMENT OF COMMERCE

GAITHERSBURG, MD 20899

T. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City’ State, ZIP)

10. SUPPLEMENTARY NOTES

. Type of Report & Period Covered

[ j Document describes a computer program; SF-185, FlPS Software Summary, is attached.

11. ABSTRACT (A 200~word or less factual summary of most significant information. If document includes a si gn i fi cant

bibliography or literature survey, mention it here) This paper describes mechanisms by which the National Voluntary

Laboratory Accreditation Program (NVLAP) seeks to assure

continuing competence of accredited laboratories to perform

specific test methods or types of tests. Surveillance of

laboratories (defined as actions taken after initial

accreditation to ensure continued compliance with accreditation

criteria) is achieved through proficiency testing, on-site

assessments, and emphasis on the laboratory's own guality

assurance system.

12. KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolon s) accreditation; assessment; laboratory accreditation; proficiency

testing; quality assurance; surveillance

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IR 87-3653

RESTRICTED

UNAVAILABLE FOR BINDING

IR 87-3654

CANCELLED 12/17/87

UNAVAILABLE FOR BINDING

NBSIR 87-3655

Center for Electronics and

Electrical Engineering

Technical

Publication

Announcements

Covering Center Programs,

January to March 1987, 1

with 1987 CEEE Events Calendar

August 1987

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899
INTRODUCTION TO THE CEEE TECHNICAL PUBLICATION ANNOUNCEMENTS

|

rhis is the twelfth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and Electrical Engineering. This issue of the CEEE Technical Publication Announcements

covers the first quarter of calendar year 1987.

poDtcrios

Organization of Bulletin : This issue contains citations and abstracts for Center

papers published in the quarter. Entries are arranged by technical topic as identified in the table of contents and alphabetically by first author within each topic.

Following each abstract is the name and telephone number of the individual to contact

for more information on the topic (usually the first author) . This issue also includes a calendar of Center conferences and workshops planned for calendar year 1987, some preliminary events for 1988, and a list of sponsors of the work.

Center for Electronics and Electrical Engineering ; Center programs provide national

reference standards, measurement methods, supporting theory and data, and traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U. S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

Silicon Hcter.

allia Arse.

jmensional *

Device Pbysirs

fast signal W

Kavefon

Orjoelectra"

Antenna HetrcL

Noise KetroL:

Kicrowve ax

The work of the Center is divided into two major programs: the Semiconductor Technology Program," carried out by the Semiconductor Electronics Division in Gaithersburg, MD, and the Signals and Systems Metrology Program, carried out by the Electrosystems Division in Gaithersburg and the Electromagnetic Fields and Electromagnetic

Technology Divisions in Boulder, CO. See the table of contents on the opposite page

tor identification of the topics covered by each program, as represented in this

issue. Key contacts in the Center are given on the back cover; readers are encouraged to contact any of these individuals for further information.

Electro-Ctt:

Other ftst Sii

raiCAL SET

Supercondoct:

Magnetic it:*

Center sponsors : The Center Programs are sponsored by the National Bureau of Standards and a number of other organizations, in both the Federal and private sectors;

these are identified on page 16.

®R(KAar::;

Radiated Lt:

Note on Publication Lists : Guides to earlier as well as recent work are the publication lists covering the work of each division. These lists are revised and reissued

on an approximately annual basis and are available from the originating division.

The current set is identified in the Additional Information section, page 14.

ADDITIONAL :k? W CEEE CAL3

SfONSOR LISJ
:EEE Technical Publication Announcements - September 1987 Page 1

TABLE OF CONTENTS

INTRODUCTION . . . inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM

Silicon Materials 2

Gallium Arsenide Materials ....... 2 Dimensional Metrology 3

Device Physics and Modeling 3

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 4

Waveform Metrology 4

Cryoelectronic Metrology . 6

Antenna Metrology 6

Noise Metrology 7

Microwave and Mil lime ter-Wave Metrology 8

Electro-Optic Metrology 9

Other Fast Signal Topics 9

ELECTRICAL SYSTEMS 10

Superconductors 10

Magnetic Materials and Measurements 10

ELECTROMAGNETIC INTERFERENCE . 11

Radiated Electromagnetic Interference 11

ADDITIONAL INFORMATION ..14

1 987 CEEE CALENDAR .15

SPONSOR LIST 16

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 2 CEEE Technical Publication Announcements - September 87

SEMICONDUCTOR TECHNOLOGY

Silicon Materials

Ehrstein, J. R. , Spreading Resistance

Measurements - An Overview, Emerging

Semiconductor Technology, A STM STP 960,

D.C. Gupta and P.H. Langer, eds., pp.

453-479 (American Society for Testing

and Materials, 1987).

Spreading resistance is the most versa- tile electrical technique for characterizing depth profiles in silicon. However, it is being increasingly challenged as an analytical method by

shrinking device geometries. Consequently, refinement of such aspects as probe conditioning, sample preparation

and bevel angle measurement is needed,

and traditional practice regarding calibration, algorithms and profile interpretation must be reexamined. Based on examples drawn from the author's work,

multi laboratory experiments, and recent

literature to illustrate and discuss

these topics, this paper will attempt to

summarize the current status of the

measurement and its interpretation showing both strong points and apparent

limi tations.

[Contact: James R. Ehrstein, (301)

975-2060]

Gladden, w. K. , and Baghdadi, A., Free

Carrier Absorption and Interstitial

Oxygen Measurements, Emerging

Semiconductor Technology, ASTM STP 960,

D.C. Gupta and P.H. Langer, eds., pp.

353-364 (American Society for Testing

and Materials, 1987).

The infrared (IR) absorption of both n- and p-type silicon samples were measured

over the concentration range ~10^ cm- 3 to 1 0

1 7 cm-3 . The free carrier absorption exhibited a power- law dependence

with wavenumber. The data were fit to a logarithmic function with this dependence, and these results were applied to

the determination of the baseline from

which to compute the corrected net IR

absorption at 1107 cm-1 due to interstitial oxygen. Application of this

correction for the free carrier absorption results in an improvement of 3%-30%

in the accuracy of the oxygen content

determination at concentrations above

1 01 6 atoms/cm 3. [Contact: Aslan Baghdadi, (301)

975-2062]

Gallium Arsenide Materials

Bouldin, C.E., Forman, R.A., and Bell,

M.I. , Conversion Yield EXAFS Measurements of Ion-Damaged GaAs , Physics

Review B, Vol. 35, No. 3, pp. 1429-1432

(1 5 January 1 987)

Extended x-ray absorption fine structure

(EXAFS) measurements of ion- implanted

GaAs have been made using conversion

electron detection. This total electron

yield detection technique (termed

CEEXAFS) allows near-surface sensitivity

with a sampling depth of 700 to 1000 A.

Measurements of the Ga absorption edge

show that implantation of 10 16 cm- 2 of

Zn ions at 180 KeV into GaAs produces

heavy lattice damage (amorphization) to

a depth of about 700 to 900 A. After

rapid thermal annealing, the amorphous

layer is found to be recrystallized and

structurally indistinguishable from

unimplanted material. The sampling

depth of CEEXAFS has been measured for

the first time, using standards with

known depth dependent structure. The

CEEXAFS technique greatly reduces Bragg

peak contamination of the EXAFS signal

from single crystal materials, and allows measurement of a variety of samples

which cannot be fabricated as thin lay- ers for conventional transmission or fluorescence EXAFS measurements. The

method permits examination of the local

environment of host atoms (in this case

Ga) in the near surface region without

interference from the underlying bulk

and without the distortions found in

fluorescence EXAFS measurements of con- centrated samples.

[Contact: Charles E. Bouldin, (301)

975-2046]
C EEE Technical Publication Announcements - September 87 Page 3

Dimensional Metrology

Larrabee, R.D. , Submicrometer Optical

and SEM Linewidth Metrology, Proceedings of the 1987 Measurement Science

Conference, Irvine, California, January

29-30, 1987, pp. V-D ( 1 ) — V-D (10).

The feature sizes on modern integrated

circuits are presently taxing the ability of visible-light optical systems to

perform the necessary dimensional mea- surements required during their production. With the shrinking of feature

dimensions to the micrometer and submicrometer level, diffraction and finite

wavelength become the limitations of

existing optical systems. In an effort

to overcome these limitations, metrology

systems based on the scanning electron

microscope (SEM) have appeared and are often assumed to be the panacea of all

the problems and the limitations of

existing optical systems. In response

to the application of the SEM to these

problems, new optical systems have appeared including ultraviolet and laser

scanning systems. This paper takes a critical look at the basic optical and

SEM metrologies, outlines the program at

the National Bureau of Standards to

provide micrometer and submicrometer

feature-size standards for both technologies, and discusses what can be done in

practice until suitable standards become

available.

[Contact: Robert D. Larrabee, (301

)

975-2298]

Nyyssonen, D. , A Practical Method for

Edge Detection and Focusing for Linewidth Measurements on Wafers,

Optical Engineering, Vol. 26, No. 1,

pp. 081-085 (January 1987).

Lack of precision and accuracy of inprocess critical dimension (CD) measurements of linewidth continues to be a serious problem at micrometer and submicrometer dimensions. Even with highly

repeatable optical linewidth measurement

systems, variable "offsets" or errors

have been shown to occur with changes in

process variables such as thickness of

the patterned layer and sublayers and

changes in the indices of refraction of

the materials. All of these variations

result in a change in the optical phase

difference that occurs on reflection at

the line edge and, therefore, result in

changes in the structure of the optical

image. Although an accurate coherent

optical edge-detection method has been

developed, it requires accurate knowledge of this phase difference, which is

not always possible in CD measurements.

This paper proposes a new dual- threshold

method for edge detection and focusing,

based on image theory, which can be

adapted to most optical microscope based

measurement systems. It does not re- quire knowledge of the phase discontinuity at the line edge. The accuracy of

this criterion is compared to two more widely used criteria, (1) the minimum

and (2) 50% threshold, and it is con- cluded that, when the phase difference

is unknown and varies with normal processing, the new dual- threshold method

is the superior method.

[Contact: Robert L. Larrabee, (301)

975-2298]

Device Physics & Modeling

Albers, J. , Monte Carlo Calculation of

Primary Kinematic Knock-On in SIMS,

Emerging Semiconductor Technology, A STM

STP 960, D.C. Gupta and P.H. Langer,

eds., pp. 535-557 (American Society for

Testing and Materials, 1987).

Secondary Ion Mass Spectrometry (SIMS)

occupies a central position in atomic

profiling of semiconductor device structures. One of the possibilities for

distortion of the profiles is the phenomenon of knock-on, in which the incident sputtering ion transfers enough

kinetic energy to the impurity atoms to

push them deeper into the material before they can be sputtered and counted.

The effects of sputtering and primary

kinematic knock-on are investigated by

means of a Monte Carlo code previously

used to study ion implantation processes. In particular, the dependence of

the primary kinematic knock-on on the
Page 4 CEEE Technical Publication Announcements - September 87

Device Physics & Modeling (con'd.)

mass and energy of the sputtering ion as well as the mass of the impurity atom

are presented.

[Contact: John Albers, (301) 975-2075]

Albers, J. , Some Aspects of Spreading

Resistance Profile Analysis, Emerging

Semiconductor Technology, ASTM STP 960,

D.C. Gupta and P.H. Langer, eds., pp.

480-501 (American Society for Testing

and Materials, 1987).

The calculation of resistivity profiles

(and carrier density profiles) from

spreading resistance requires the use of

a correction factor. The present status

of the calculation of the correction

factor based upon the Schumann and

Gardner multilayer solution of Laplace's

equation is reviewed and discussed.

Recent calculations of carrier densities

from atomic densities are also discussed. In particular, the numerical

solutions of the semiconductor equations

are reviewed, and their implications in

tne interpretation of spreading resistance measurements for profiling shallow

layers are presented. The limitations

of the multilayer Laplace equation analysis of spreading resistance in VLSI

profiling are also discussed.

[Contact: John Albers, (301 ) 975-2075]

Marchiando, J.F., and Albers, J. , Effects of Ion- Implantation Damage on Two-Dimensional Boron Diffusion in

Silicon, Journal of Applied Physics,

Vol. 61, No. 4, pp. 1 380-1 391 (1 5 February 1 987 ) .

Well-defined control of boron implanted

in silicon during a high- temperature

short-time anneal is important in calculation of snallow p-n junction profiles

in metal oxide-semiconductor

field-effect transistors (MOSFETs).

During an anneal, boron may exhibit

enhanced diffusion lasting about a second. Here, displacement damage is

removed largely by release and condensation of single vacancies, which enhance

the boron diffusion via the charged

vacancy mechanism. Model 2-D distributions of boron and displacement damage

implanted near a mask edge are used to

calculate the redistribution of boron

resulting from a seven-second - anneal.

Boron redistributes further into the

bulk, while leaving the channel length

unaffected. The redistribution agrees

favorably with that reported in the

literature.

[Contact: Jay F. Marchiando, (301)

975-2088]

FAST SIGNAL ACQUISITION, PROCESSING,

AND TRANSMISSION

Waveform Metrology

Adair, R.T., Ehret, R.L. , and Livingston, E.M., Measurement: of RF Signal

Generator Phase Noise Using a OneGenerator Delay-Line Method, IEEE

Transactions on Instrumentation and

Measurement, Vol. IM-35, No. 4, pp.

496-502 (December 1986).

A technique is described which utilizes

a single generator and a delay line for

the measurement of frequency-domain

phase noise in synthesized signal

generators. Terms are defined and

equations developed for theory and

calculations of normalized phase-noise

sideband power in a 1-Hz bandwidth

offset 20 kHz from signal frequencies of

interest. The system described covers

the range from 0.45 to 2000 MHz. The

function and contribution of each

component in the measurement system is

presented. Advantages of this method

are discussed and a brief error analysis

is given.

[Contact: Robert T. Adair, (303)

497-3461]

Kuffel, J.

Malewski, R.A., van

Heeswijk, R. , and Lawton, R.A., Dynamic Performance of Digital Recorders

Used for Monitoring High-Voltage

Impulse Tests, IEEE Transactions on Instrumentation and Measurement, Vol.

IM-35, No. 4, pp. 591-595 (December

1986) .
CEEE Technical Publication Announcements - September 87 Page 5

Waveform Metrology (cont'd.)

Frequency- and time-domain characteristics of digital transient recorders (in

short, digitizers) are discussed in

order to establish the requirements on digitizers used for high-voltage testing. Results of an experimental study

performed on a 200-MHz 8-bit digitizer

are presented and related to the design

features of this instrument. The inherent design characteristics and their

influence on the digitizer dynamic performance are analyzed in view of simulation of the digitizer through a computer

model.

[Contact: Robert A. Lawton, (303)

407-3339]

Nahman, N.S., Status and Future Directions of Picosecond Domain Waveform

Measurements, Time-Domain Measurements in Electromagnetics, E.K. Miller,

ed. , Chapter 2 (Van Nostrand Reinhold

Co., New York, NY, 1986), pp. 45-71.

The main purpose of this chapter is to

(1) summarize the present-day capability

in time-domain measurements for pulses

or transient signals whose shape (evolution with time) occurs on a time scale

of the order of picoseconds, and (2)

offer some opinions as to the future

directions of electrical and optical

picosecond-domain pulse waveform mea- surements. Consequently, the techniques

and other data presented here are

limited to those suitable for such fast

signals. For example, all of the methods cited recognize that the signal-circuit interconnections or transmission

paths in devices and in instrumentation

are distributed or wave-guiding in

nature.

The review of the state of the art of

picosecond time-domain waveform measurements presented here includes measurements in both the electrical (dc through

mm waves, etc.) the optical regions

(infrared through visible, etc.) of the

electromagnetic spectrum. This review

is the latest edition of a series of

reviews on high-speed pulse measurements

compiled by the author commencing in

1967; specifically, this review updates

the 1983 review. The significance of

the Institute of Electrical and Electronic Engineers (IEEE) Pulse Standards

181 and 194 and of the identical International Electrotechnical Commission

( IEC) Standards 469-1 and 649-2 is discussed briefly. The classification of

time-domain measurements from the 1978

review is summarized and augmented with

basic instrumentation block diagrams.

The present-day capabilities are presented via temporal resolution state-ofthe-art charts using the 1978 format.

For the reader's convenience, the 1978

charts are reproduced here, along with

charts that show only those changes

that have occurred since 1978. The

references cited in all of the chart

entries are contained in the list of

references.

[Contact: Ramon C. Baird (303)

497-3301]

Oldham, N.M., Techniques and

Instruments for Automated Electrical

Measurements, MAPAN, Journal of

Metrology Society of India, Vol. 1, No.

1, pp. 25-27 (1 986) .

A summary of previous developments in

the field of automated electrical

measurements is presented.

[Contact: N. Michael Oldham, (301)

975-2408]

Sc ho enwe t te r , H.K., Flach, D.R.,

Souders, T.M., and Bell, B.A., A

Precision Programmable Step Generator

for Use in Automated Test Systems,

NBS Technical Note 1230 (December

1986)

A precision voltage step generator has

been designed for use in automated systems to test the dynamic response of

waveform recorders and other instruments. The programmable pulse parameters include transition polarity, pulse

length, and repetition rate. The

initial and final levels of voltage

steps are each programmable within the

range of ±1 V for a 50-ft termination and
Page 6 CEEE Technical Publication Announcements - September 87

Waveform Metrology (cont'd.

within ±5 V for a high impedance load.

Voltage steps within these ranges settle

to within ±0.02% of full scale range in

less than 22 and 26 ns, respectively,

for small load capacitance. The corre- sponding transition durations are approximately 6 and 7 ns. [Contact: Howard K. Schoenwetter, (301)

975-2414]

Cryoelec tronic Metrology

McDonald, D.G. , High Accuracy in

Physics, Science, p. 829 (August 22,

1 986)

Philip Abelson, in an editorial in

Science , reviews the National Research

Council report "Physics Through the

1 990s" and writes "Of all the quantities

in physics, time is by far the most

accurately measured." I argue that the

Josephson effect has comparable

accuracy

[Contact: Donald G. McDonald, (303)

497-51 1 3]

Muhlfelder, B. , Beall, J. A., Cromar,

M.W., and Ono, R.H. , Very Low Noise,

Tightly Coupled, dc SQUID Amplifiers,

Applied Physics Letters, Vol. 49, No.

17, October 27, 1986, pp. 1118-1120.

We have fabricated and tested thin-film,

niobium edge junction, double transformer, ac superconducting quantum interference devices (SQUIDs) that were stable

under room- temperature storage and thermal cycling and that had very good noise

performance. The input inductance,

approximately 1.7 pH, was large enough

to facilitate good matching to many

experiments. When the SQUID was

operated as a small-signal amplifier,

the minimum detectable energy per unit

bandwidth (Se ) was 5 * 10” 33 J/Hz at

1 00 KHz , referred to the SQUID loop

(uncoupled) . The minimum detectable

energy per unit bandwidth was 1.8 x 10-31 J/Hz at 100 kHz, referred to the

input coil. Ihe SQUIDs had good characteristics for flux-locked operation

since the small signal Se was low over

a substantial range of bias current and

magnetic flux. Par operations in a flux-locked feedback circuit, Se was 6

x 10~ 3

J/Hz at 1 kHz.

[Contact: James T. Beall, (303)

497-5989]

Antenna Metrology

Baird, R.C., Daywitt, W.C., Newell,

A.C., Perera, S., Repjar, A.G. , Wait,

D. F., and Estin, A.J. , Calibration

Requirements for EHF Satellite Communication Systems, NBSIR 86-3058

(October 1986).

Ihe calibration and measurement support

requirements of mil lime ter-wave satellite systems such as MILSTAR have been

investigated. Needs for measurements on satellite systems are reviewed. An

overview of the various means available

for calibrating antenna gain, one of the

key measurements that needs to be

accurately accomplished, is presented.

Essentially three new measurement

problems arise because of operating in

the upper SHF and EHF frequency ranges.

First, without adequate methods to

measure the atmospheric loss, the

accuracy of effective isotropic radiated

power (EIRP) measurements in the 20 to

45 GHz range can be no better than 0.5

dB to 3 dB (depending on frequency and

antenna elevation angle) , which is

inadequate for MILSTAR requirements.

Second, standards and measurement

support services are not presently

available from the National Bureau of

Standards and are needed to support

millimeter-wave antenna gain and thermal

noise measurements. Third, if the sun and/or moon are to be used for measuring

the earth terminal G/T, earth terminal

antenna gain, or satellite EIRP in the

millimeter region, they need to be

appropriately characterized at those

frequencies.

[Contact: Ramon C. Baird, (303)

497-3301]

Hill, D.A., Far-Field Transient

Response of an Antenna from Near-Field
CEEE Technical Publication Announcements - September 87 Page 7

Antenna Metrology (cont'd.)

Data, NBSIR 86-3063 (December 1986).

A theoretical basis for calculating the

transient far-field response of an an- tenna trom planar near-field data in

either the time domain or the frequency

domain has been developed. A double

integral must be evaluated if we begin

with time-domain data, but a triple

integral must be evaluated if we begin

with frequency-domain data. However,

the frequency-domain integrals are in a form that is suitable for three-dimensional fast Fourier transform. Two

idealized examples are studied, and

identical results are obtained starting

with frequency-domain or time-domain

data. The main practical difficulty in

determining the transient response is

the large number of near-field samples

that are required. If data are taken at

only a few near-field points, then the

singularity expansion method presents a possible method of determining the com- plex resonances of the antenna under

test.

[Contact: David A. Hill, (303)

497-3472]

Hill, D.A., Out-of-Band Response of

Reflector Antennas, IEEE Transactions

on Electromagnetic Compatibility, Vol.

EMC- 28, No. 2, pp. 80-89 (May 1986).

[This paper includes Sections 1 through

3 and Appendix A of NBSIR 85-3021,

April 1985.]

The response of reflector antennas to

out-of-band frequencies has been

analyzed using physical optics. A

simple approximate expression has been

obtained tor the effective aperture, and

this expression yields both the receiving pattern and the frequency dependence

of the on-axis gain. The theory has

been compared with published out-of-band

measurements, and the pattern agreement

is good, but the measured gain falls

belcw the theory. This discrepancy is

caused by mismatch loss in the coax-towaveguide adapter.

[Contact: David A. Hill, (303)

497-3472]

Muth, L.A., Displacement Errors in

Antenna Near-Field Measurements and

Their Effect on the Far Field, NBS

Technical Note 1 306 (October 1986).

The effects of probe displacement errors

in the near-field measurement procedure

on the far-field spectrum are studied.

Expressions are derived for the displacement error functions that maximize

the fractional error in the spectrum

both for the on-axis and off-axis directions. Planar x-y and z-displacement

errors are studied first, and the

results generalized to position errors

in cylindrical and spherical scanning.

Near-field models are used to obtain

order-of-magnitude estimates for the

fractional error as a function of

relevant scale lengths of the near

field, defined as the lengths over which

significant variations occur.

[Contact: Lorant A. Muth, (303)

497-3603]

Noise Metrology

Baird, R.C., Daywitt, W.C., Newell,

A.C., Perera, S., Repjar, A.G. , Wait,

D.F., and Estin, A.J. , Calibration

Requirements for EHF Satellite Communication Systems, NBSIR 86-3058 (October 1 986)

.

The calibration and measurement support

requirements of millimeter-wave satellite systems such as MILSTAR have been

investigated. Needs for measurements on

satellite systems are reviewed. An

overview of the various means available

for calibrating antenna gain, one of the

key measurements that needs to be

accurately accomplished, is presented.

Essentially three new measurement

problems arise because of operating in

the upper SHF and EHF frequency ranges.

First, without adequate methods to

measure the atmospheric loss, the

accuracy of effective isotropic radiated

power (EIRP) measurements in the 20 to

45 GHz range can be no better than 0.5

dB to 3 dB (depending on frequency and

antenna elevation angle) , which is

inadequate for MILSTAR requirements.
Page 8 CEEE Technical Publication Announcements - September 87

Noise Metrology (cont'd.)

Second, standards and measurement

support services are not presently

available from the National Bureau of

Standards and are needed to support

millimeter-wave antenna gain and thermal

noise measurements. Third, if the sun and/or moon are to be used for measuring

the earth terminal G/T, earth terminal

antenna gain, or satellite EIRP in the

millimeter region, they need to be

appropriately characterized at those

f requencies.

[Contact: Ramon C. Baird, (303)

497-3301]

Microwave and Mil lime ter- Wave Metrology

Adair, R.T., Reeve, G.R., and Gatterer,

L . E. , Millime ter-Wave Standards: An

Emerging Need, IEEE Transactions on Instrumentation and Measurement, Vol.

IM-35, No. 4, pp. 376-382 (December

1 986)

Several technology surveys concerning

millimeter-wave (MMW) measurement needs

and capabilities have been conducted by

the National Bureau of Standards (NBS),

Boulder Laboratories, and others. The

results of some of these studies are summarized. Current MMW standards and

calibration capabilities at NBS are reviewed. The lack of national standards in certain frequency bands may

lead to problems with specification,

acceptance testing, and calibration of some components and systems.

[Contact: Robert T. Adair, (303)

497-3461]

Ginley, R.A., and Allred, C.M., 1.25

MHz Attenuation Measurement System.

IEEE Transactions on Instrumentation

and Measurement, Vol. IM-35, No. 4, pp.

463-466 (December 1986).

A system has been developed to make

highly accurate measurements of nominally b-dB increments of attenuation at

1.25 MHz. Initial experiments indicate

a typical systematic error of 5 pB (1 pB

= 0.00001 dB) with a resolution of 1 yB.

A special linearity measurement system

(LMS) using NBS-construc ted, linear

tuned hybrids and power detectors has

been used to determine the nonlinearity

of a tuned 1 . 2

5 -MHz power detector. This

detector utilizes a single thermistor

bead design with thermal isolation to

obtain nearly linear tracking of a 4:1

change in input power. Hie nonlinear

correction for this change, determined

by the LMS, is on the order of 13 pB for

the detector presently in use. This

calibrated detector and another of similar design are used in the attenuation

measurement system to make power ratio

measurements to determine the change in

attenuation of the device under test. It

is anticipated that changes of approximately 6 dB can be measured with initial

insertion loss of up to 1 00 dB with an accuracy of 0.001 dB. A special design

consideration will be required for units

used for calibration in order to keep

mismatch errors from significantly

degrading the accuracies estimated

above.

[Contact: Ronald A. Ginley, (303)

497-3634]

Sequeira, H.B., and Yates, B.C., Approach for Evaluating Effects of Wall

Losses on Quarter-Wave Short-Circuit

Impedance Standards, IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-33, No. 11, pp. 1 1 0b11 09 (November 1985)

The conservation of energy principle and

first-order perturbation theory have

been applied to obtain formulas for the

physical lengths and reflection coefficient magnitudes of quarter-wave coaxial and rectangular waveguide shortcircuit impedance standards. The

expressions for the physical lengths ensure zero phase angle at the mating

interface when wall losses are present.

The method can be extended to include

small dielectric and magnetic losses,

and requires only knowledge of the lossfree solutions. It can also be applied

to other waveguiding structures which

support uncoupled modes.
CEEE Technical Publication Announcements - September 87 Page 9

Microwave & Millimeter-Wave (cont'd.)

[Contact: Billie C. Yates, (303)

497-3568

J

Electro-Optic Metrology

Day, G.W., Hale, P.D. , Deeter, M.,

Milner, T.E., Conrad, D. , and Etzel,

S.M., High Precision Electro-Optic

and Magneto-Optic Sensors for Power

System Applications: Technical

Feasibility, NBS Technical Note

1 307 (March 1 987)

.

The principles of electro-optic and

magneto-optic sensors suitable for use in power system applications are re- viewed with particular attention to the

properties of materials and components

that limit the precision of such sensors. Section topics include precision

and accuracy in electro-optic and magneto-optic sensors; electro-optic and

magneto-optic sensor configurations

suitable for current and voltage mea- surements; critical evaluation of electro-optic sensor technology; critical

evaluation of magneto-optic sensor technology; and suggested approaches to the

development of high-precision optical

current and voltage sensors. Data on a number of materials are collected and

presented. For high-precision electrooptic sensors, it is recommended that

crystals of the polar class having point

symmetry 43 m be used. For highprecision magneto-optic sensors, a lead

glass with a low stress-optic coefficient is recommended. Choices for

other components are also suggested.

For both types of sensors, a precision

of roughly ±1% over a 100°C temperature

range should be attainable. Tb achieve

a precision better than that, it will be

necessary to use temperature compensation techniques, several of which are proposed and discussed.

[Contact: Gordon W. Day, (303)

497-5204]

Other Fast Signal Topics

Hill, D.A., Electromagnetic Wave

Propagation in an Asymmetrical Coal

Seam, IEEE Transactions on Antennas

and Propagation, Vol. AP-34, No. 2, pp.

244-247 (February 1986).

Electromagnetic wave propagation in a coal seam is analyzed for the case where

the surrounding floor and roof rocks

have differing electrical properties.

Numerical results are presented for the

attenuation rate and field distribution

of the dominant mode. Even when the

roof and floor conductivities are

different, the vertical electric field

and the horizontal magnetic field are

the dominant components, and they are

nearly constant within the coal seam. The results have application to mine

communication and remote sensing of coal

seams

.

[Contact: David A. Hill, (303)

497-3472]

Hill, D.A., and Wait, J.R., Anomalous

Vertical Magnetic Field for Electromagnetic Induction in a Laterally Varying

Thin Conductive Sheet, Radio Science,

Vol. 21, No. 4, pp. 617-621 (JulyAugust 1986).

We employ a simple model to show how the

natural electromagnetic field on the

surface of the earth, which has a strong

horizontal magnetic field component, can

be converted to a significant vertical

magnetic field at the surface. Such a conversion mechanism will be caused by

lateral variations of the subsurface

conductivity structure. Our idealized

model is a thin conducting sheet with a periodic variation of the conductivitythickness product in one horizontal

direction only.

[Contact: David A. Hill, (303)

497-3472]

Perrey, A.G. , Bell, B.A., and Treado,

M.J. , Evaluation of Electronic Monitoring Devices, NBSIR 86-3501

(December 1986).

Electronic Monitoring Devices ( EMDs ) are used to monitor the presence of individuals within a given area who are respon-
Page 1

CEEE Technical Publication Announcements - September 87

Other Fast Signal Topics (cont'd.)

sible to the criminal justice system but

not confined to institutions. Several

EMUs were tested to measure operational

characteristics such as operating frequency, approximate range of operation,

component capability, and tamper resistance. Tests were conducted in an open

field, wooden residence, high rise metal

building, and in a laboratory environment.

(.Contact: Arnold G. Perrey, (301)

975-2782]

ELECTRICAL SYSTEMS

Superconductors

Benson, R.G., Goldfarb, R.B., and

Pittmann, E.S., Quench Circuit for

Electronic Instruments Used with

Superconducting Magnets, Cryogenics,

Vol. 26 (Butterworth & Co. Ltd.,

August/ September 1986), pp. 482-483.

A multifunction circuit is described

that protects instruments connected or coupled to a superconducting magnet in

the event of a quench.

[Contact: Ronald B. Goldfarb, (303)

497-3650]

Goldfarb, R.B, and Ekin, J.W., Hysteresis Losses in Fine-Filament InternalTin Superconductors, Cryogenics, Vol.

26 (Butterworth & Co. Ltd., August/September 1986), pp. 478-481.

Hysteresis losses were measured on a series of fine-filament NbgSn superconductors made by the internal- tin pro- cess. Hysteresis was measured as a function of filament diameter and interfilament separation using a vibratingsample magnetometer in transverse

magnetic field. Losses were greater

than expected compared to predictions of

the critical-state model that expresses

loss as a function of filament diameter.

Micrographs of the reacted wire cross sections show some in te r f i 1 ame n

bridging for all wires. This bridging

gives rise to effective filament

diameters that are greater than actual

diameters. The critical interfilament

separation, above which the losses would

be expected to follow the critical- state

model, was determined.

[Contact: Ronald B. Goldfarb, (3 03)

497-3650]

Goldfarb, R.B., Internal Fields in

Magnetic Materials and Superconductors, Cryogenics, Vol. 26 (Butterworth & Co. Ltd., August/ September

1986), pp. 621-622.

This paper reviews some of the concepts

needed for the correct analysis of magnetization data, both for magnetic materials and superconductors. Demagnetization factors, initial suceptibilities,

and hysteresis losses are discussed.

[Contact: Ronald B. Goldfarb, (303)

497-3650]

Magnetic Materials and Measurements

Capobianco, T.E., Moulder, J.C., and

Fickett, F.R., Flaw Detection with a Magnetic Field Gradioeeter , Proceedings of the Fifteenth Symposium on Nondestructive Evaluation, San Antonio,

Texas, April 23-25, 1985, pp. 15-20.

When eddy currents are induced in a conductor, flaws deflect the eddy cur- rents and perturb the associated electric and magnetic fields. In conven- tional eddy current testing, the perturbed fields associated with a flaw are detected as a change in the impedance of

the test coil used to induce the eddy

currents. More direct methods for

detecting and characterizing flaw-perturbed fields, both electric and magnetic, have also been developed. We

describe a method for determining the

normal component of the magnetic field

gradient caused by a flaw. A novel

feature of the measurement system is the use of a Superconducting Quantum Interface Device (SQUID). The SQUID provides

more sensitivity than conventional

detection methods, and the possibility

of calibration based on a fundamental

physical quantity: the flux quantum. We
CEEE Technical Publication Announcements - September 87 Page 1

1

Magnetic Materials , etc, (cont' d.)

report the results of a series of mea- surements on a fatigue crack and several

manufactured defects in aluminum alloy

specimens using this system. The effect

of edge proximity compared to flaw signal and a figure of merit are also discussed.

[Contact: Thomas E. Capobianco, (303)

497-3141]

Goldfarb, R.B., Internal Fields in

Magnetic Materials and Superconductors, Cryogenics, Vol. 26 (Butterworth & Oo. Ltd., August/ September

1 986) , pp. 621-622.

This paper reviews some of the concepts

needed tor the correct analysis of magnetization data, both for magnetic materials and superconductors. Demagnetization factors, initial suceptibilities,

and hysteresis losses are discussed.

[Contact: Ronald B. Goldfarb, (303)

4497-3650]

ELECTROMAGNETIC INTERFERENCE

Radiated Electromagnetic Interference

Adams, J.W., and Vanzura, E. , Shielding Effectiveness Measurements of Plastics, EMC Technology, pp. 39-42

( Septemoer-Oc tober 1986).

i Measurement of shielding effectiveness

of plastic materials presents problems

i' because of the insulating nature of many

plastics. A method of making the mea- surements using a flanged coaxial holder

overcomes these limitations.

[Contact: John W. Adams, (303)

497-3328]

Bensema, W.D., Koepke, G.H., and Medley,

H.W., Handbook for NBS Multisensor

Automated EM Field Measurement System,

NBSIR 86-3056 (October 1986).

A system is described that monitors and

collects electromagnetic (EM) field

strength information at five (optionally

10) locations simultaneously. The system has two modes of operation: (1) for

sampling EM fields that are stationary

for times of the order of 200 ms, and

(2) for sampling changing EM fields with

a system resolution of 10 ys . Sensing

elements for Mode 1 consist of three

electrically short orthogonal dipoles

mounted together, single dipole elements, or small loop antennas. Ebch

element feeds a separate data input

channel for a total of 15 (optionally

30) channels. Radiofrequency energy is

converted to dc by a diode detector at

each dipole. Mode 2 sensors are diode

detectors driven by broadband antennas.

Real-time system data processing includes calculation of field strength

based on probe calibrations and processing of resultant data to satisfy mea- surement goals.

[Contact: William D. Bensema, (303)

497-3465]

Cruz, J. E. , and Larsen, E.B., Assessment of Errors for Some Typical MILSTD-461/462 Types of Measurements,

NBS Technical Note 1300 (October

1986)

.

This report deals with the instrumentation and equations for several systems

used by the U.S. Army for electromagnetic compatibility (EMC) testing and

calibrations. Most testing for MIL-STD461/462 is performed in a shielded

enclosure (screenroom) rather than an open field site, which leads to uncer- tainty in the measurement of emissions

from electronic equipment, or the sus- ceptiblity of equipment to radiation.

Assessment of error bounds by the

National Bureau of Standards is covered

in this rep>ort, and suggestions are given for improving the measurements.

Pour areas of concern were studied as follows: (a) EM fields generated in a parallel- pi ate transmission line (stripjline) , (b) EM fields beneath a singlewire transmission line in a screenroom

(longwire line), (c) determination of

antenna factors for EMI antennas located

in a screenroom, and (d) calibration of

EMI receivers to measure broadband
Page 1

CEEE Technical Publication Announcements - September 87

Radiated EMI (cont'd.)

impulsive signals. Most EMC antennas at

NBS are calibrated at an open field site

or in an anechoic chamber. This report

presents antenna factors determined in a typical screenroom using the two-antenna

method, and comparison with those determined at an open field site. The video

pulse technique prescribed in MIL-STD462 tor calibrating EMI receivers was also evaluated. Pour different methods

were tested for comparison with the

MIL-STD approach. They are defined and

discussed in this report.

[Contact: Jose E. Cruz, (303)

497-3763]

Jesch, R.L . , A Survey of Triaxial and

Mode-Stirred Techniques for Measuring

the Shielding Effectiveness of Connectors and Cables, NBS IR 86-3060

(October 1 986) .

This report is the result of an extensive literature search conducted in the

field of connectors and cables, with

reference to radio- frequency leakage

characteristics and capabilities for

measuring shielding effectiveness of

connectors and cables. The report

reviews two measurement techniques for

determining shielding effectiveness:

the triaxial test technique that has

been used for over 20 years and the

mode-stirred test technique that recently has started to gain in popularity.

From this survey, certain inferences are drawn about these techniques in terms of

device configuration, frequency range,

and ease of measurement and are presented in chart form for comparative

purposes.

[Contact: Ramon L. Jesch, (303)

497-3496]

Kanda, M., Time-Domain Sensors and

Radiators, Time-Domain Measurements

in Electromagnetics, E.K. Miller, ed. , Chapter 5 (Van Nostrand Re inhold Co. , New York, NY, 1986), pp. 1 22-174.

The purpose of this chapter is to dis- cuss various sensors and radiators commonly used for time-domain antenna mea- surements. The sensors and radiators

discussed here are passive analog

devices that convert the electromagnetic

quantity of interest to a voltage or current at their terminal ports. Moreover, they are primary standards in the sense that their transfer functions can be calculated from their geometries and

are flat (frequency-independent) across

a wide frequency range. One of the

major requirements of these sensors and

radiators is that the electromagnetic

far field, for transmission or reception, be a replica or high-fidelity

derivative of the original pulse.

Because of their usefulness in electricfield strength measurements, linear

antennas nonuniformly and continuously

loaded with resistance, or both resistance and capacitance, are discussed.

Also, a conical antenna and an asymptotic conical antenna are examined from

the standpoint of improved antenna characteristics. Various types of trans- verse electromagnetic (TEM) horns are considered for improved directivity,

e.g. , a conducting TEM horn and a resistively loaded TEM horn. For magneticfield strength measurements, a loop

antenna with uniform resistive loading

is discussed.

Section 5.1 discusses one of the important properties governing the transmitting and receiving transfer functions of

an antenna. The frequency-domain and

time-domain characteristics of the various electric- and magnetic- field sensors mentioned above are then covered in

Secs. 5.2 and 5.3, respectively.

[Contact: Motohisa Kanda, (303)

497-5320]

Kanda, M., and Wyss, J. C. , Evaluation

of Off Axis Measurements Performed in

an Anechoic Chamber, NBS Technical

Note 1 305 (October 1 986).

The performance of a rectangular radiofrequency anechoic chamber is measured

when the device under test is not on the

center line of the launch antenna. An
Page 1

3

CEEE Technical Publication Announcements - September 87

Radiated EMI (cont'd.)

electrically small field probe is

repeatedly scanned longitudinally away

from the launch antenna and into the

chamber. With each scan, various parameters are changed, including: 1) horizontal and vertical position of the

probe with respect to the center line of

the launch antenna; 2) frequency; and 3)

type of launch antenna. With the probe

located 1 m off the center line and

scanning between 2 to 6 meters from the

launch horn, the uncertainty due to

being off the center line ranges from ±1

dB at 250 MHz to ±5.0 dB at 800 MHz and

above. If the probe is within ±50 cm of

center line, the uncertainty is no more

than ±1.5 dB at 800 MHz; and for ±25 cm

of center line, the uncertainty is further reduced to ±0.5 dB at 800 MHz.

[Contact: Motohisa Kanda, (303)

497-5320]

Ma, M.T., and Kanda, M. , Electromagnetic Compatibility and Interference

Metrology, NBS Technical Note 1099

(July 1986).

The material included in this report is

intended for a short course on electromagnetic compatibility/interference

(EMC/EMI) metrology to be offered jointly by the staff of the Fields Characterization Group and the Interference Characterization Group of the Electromagnetic Fields Division. The purpose of

this short course is to present a review

of some of the radiated EMC/EMI measure- ment methods, to which the National

Bureau of Standards (NBS) at Boulder,

Colorado, has made significant contributions during the past two decades. The

technical foundation for these methods,

and interpretations of the measured

results are emphasized, as well as strengths and limitations. The entire

course is presented in nine chapters

with the introductory part given as Chapter 1 . The particular measurement

topics to be covered are: i) open sites

(Chapters 2 and 6), ii) transverse electromagnetic cells (Chapter 3) , iii)

techniques for measuring the electromagnetic shielding of materials (Chapter

4), iv) anechoic chambers (Chapter 5),

and v) reverberating chambers (Chapter

8) . In addition, since a small probe

antenna plays an important role in some

of the EMC/EMI measurements covered

herein, a separate chapter on various

probe systems developed at NBS is given

in Chapter 7. Selected contemporary EMI

topics such as the characterization and

measurement of a complex EM environment,

interferences in the form of out-of-band

receptions to an antenna, and some conducted EMI problems are also briefly

discussed (Chapter 9).

[Contact: Mark T. Ma, (303) 497-3800]

Randa, J. , and Kanda, M., A Lattice

Approach to Volumes Irradiated by Unknown Sources, NBS Technical Note

1 303 (October 1986).

We suggest an approach to the characterization of electromagnetic environments

irradiated by unknown sources. The

approach is based on the numerical solution of Maxwell's equations subject to

the constraints imposed by the measured

values of the field at a small number of

measurement points and by boundary con- ditions. A thorough examination is

presented of two methods for the numerical solution. The examples attempted

demonstrate the approach, but reveal

that neither technique is fully successful. Possible future directions are

suggested.

[A paper based on the contents of this

Technical Note is scheduled for presentation at the Seventh Symposium and

Technical Exhibition on EMC (Zurich,

Switzerland, March 1987) under the title

"A Lattice Approach to Ehvironments

Irradiated by Unknown Sources" and will

appear in the proceedings of that Symposiun. A second paper based on this

material has been submitted to the IEEE

Transactions on Electromagnetic Compatibility with the title "A New Approach to

Volumes Irradiated by Unknown Sources.]

[Contact: James P. Randa, (303)

497-3150]
Page 1

CEEE Technical Publication Announcements - September 87

Radiated EMI (cont'd.)

Wilson, P. F . , and Ma, M.T. , Electromagnetic Shielding Effectiveness;

Measurement Techniques and Interpretations, 1986 IEEE Regional Conference

& Exhibition on Electromagnetic Compatibility, Anaheim, California, February

6, 1986, pp. 1-14.

A material' s shielding capability is

generally measured in terms of insertion

loss: the field reduction between a transmitter and a receiver achieved by

introducing the shield material. Ambiguities often arise when one attempts to

interpret specific measurement results.

Insertion loss data depend not only on

the shield material tested, but also on

the measurement procedure and other

parameters such as the antenna types

(both transnitting and receiving) used

and their positioning, the incident

waveform and its wave impedance,

transient effects, and the contact

resistance between the test material and

its mount, if any.

[Contact: Perry F. Wilson, (303)

497-3842]

Wilson, P. F., and to, M.T., Methods

for Measuring the Near-Field and FarField Shielding Effectiveness of Materials, Proceedings of the EMC Expo

'86 Conference, Washington, D.C., June

1 6-19, 1986, pp. T281-T286.

Techniques for measuring the shielding

effectiveness of materials are investigated. Specific approaches considered

are coaxial transmission line holders

and the use of a time-domain signal for

simulating plane wave shielding performance, and the dual transverse

electromagnetic (TEM) cell and an apertured TEM cell in a reverberation

chamber for the simulation of near-field

shielding capability. The advantages

and limitations of each technique are summarized.

[Contact: Perry F. Wilson, (303)

497-3842]

ADDITIONAL INFORMATION

Lists of Publications

Gibson, K. A., Page, J. M., and Miller,

C .K . S . , A Bibliography of the KBS

Electromagnetic Fields Division- Publications, NBSIR 85-3040 (February

1986) .

This bibliography lists publications of

the National Bureau of Standards' Electromagnetic Fields Division for the

period from January 1984 through September 1985, with selected earlier publications from the Division's predecessor

organizations.

[Contact: Kathryn A. Gibson, (303)

497-31 32]

Kline, K. E. , and DeWeese, M.E. , Metrology for Electromagnetic Technology:

A Bibliography of MBS Publications,

NBSIR 86-3048 (June 1986).

This bibliography lists the publications

of the personnel of the Electromagnetic

Technology Division of NBS in the period

from January 1970 through December 1985.

A few earlier references that are directly related to the present work of

the Division are included.

[Contact: Kathryn E. Kline, (303)

497-3678]

Pa 11a, J. C., and Meiselman, B., Electrical and Electronic Metrology: A

Bibliography of NBS Electrosystems

Division Publications, NBS List of

Publications 94 (January 1987).

This bibliography covers publications of

the Electrosystems Division, Center for

Electronics and Electrical Engineering,

NBS, and of its predecessor sections for

the period January 1963 to January 1987.

A brief description of the Division's

technical program is given in the introduction.

[Contact: Jenny C. Palla, (301)

975-2220]

Walters, E.J. , Semiconductor Measurement Technology: A Bibliography of NBS

Publications for the Years 1962—1986,

NBSIR 87-3522 (February 1987).
CEEE Technical Publication Announcements - September 87 Page 1

Lists of Publications (cont'd.)

This bibliography contains reports of

work performed at the National Bureau of

Standards in the field of Semiconductor

Measurement Technology in the period

from 1962 through December 1986. An

index by topic area and a list of

authors are provided.

[Contact: E. Jane Walters, (301)

975-2050]

1987 CEEE CALENDAR

September 22-25 (Boulder, CO)

Noise Measurement Seminar.

CANCELED

October 26-28 (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers (Nineteenth Boulder

Damage Symposium). This Symposium is

cosponsored by the National Bureau of

Standards, the American Society for

Testing and Materials, the Air Force

Office of Scientific Research, the Office of Naval Research, and the Defense

Advanced Research Projects Agency and

constitutes a principal forum for the

exchange of information on the physics

and technology of materials for highpower lasers.

Topics to be discussed include new materials, bulk damage phenomena, surface

and thin-film damage, design considerations for high-power systems, and fundamental mechanisms of laser-induced

damage. Proceedings of the Symposium

will be published (Note: The collection

of Symposium proceedings contains information on optics for all aspects of

high-power/high-energy lasers, including

environmental degradation, durability,

fabrication, material growth and deposition processes, and testing) . [Contact:

Susie A. Rivera (303) 497-5342]

December 10-11 (Gaithersburg, MD)

Power Semiconductor Devices Workshop.

This Workshop, sponsored jointly by IEEE

and NBS, is intended to bring together

for interactive participation those

actively working in the field of power

semiconductor devices. It will be held

in conjunction with the 1987 IEEE International Electron Devices Meeting in

Washington, DC. Four specific topic areas have been selected, based on the

response to a questionnaire sent to over

200 power device researchers worldwide.

They are: power and high voltage

integrated circuits, discrete devices,

device modeling, and packaging. Attendees are expected to be prepared to

contribute to the development of re- sponses to specific questions that

arise in the context of the particular

topic areas; a final schedule identifying the topic areas should be available at the end of October. [Contact:

David L. Blackburn, (301) 975-2053]

1988 CEEE Calendar

February 10-12 (San Diego, CA)

IEEE Semiconductor Thermal and Temperature Measurement Symposium. This

fourth annual SEMI-THERM symposium

is sponsored by the Components, Hybrids,

and Manufacturing technology Society of

IEEE in cooperation with NBS and constitutes an international forum for the

presentation of new developments in, and

applications relating to, generation and

removal of heat within semiconductor

devices and measurement of junction

temperatures experienced in various

applications and environments. Major

SEMI-THERM topic areas include thermal

measurements, thermal characterization,

applications, and computations and

software.

The program includes keynote speakers,

technical presentations, tutorial sessions, workshops, and an exhibit. In

addition, the Semiconductor Equipment

and Materials Institute has scheduled in

conjunction with SEMI-THERM a meeting of

its Thermal Measurements Task Force, to

which attendees are invited. [Contact:

Frank F. Oettinger, (301) 975-2054]
Page 1

CEEE Technical Publication Announcements - September 87

1988 Calendar (cont'd.)

May 11-13 (Los Angeles, CA)

Intersociety Conference on Thermal

Phenomena in Fabrication and Operation

of Electronic Components. This Conference is sponsored by the Components,

Hybrids, and Manufacturing Technology

Society of the IEEE, in cooperation with

ASME Committee K-1 6 on Heat Transfer and

NBSo It is intended to provide an interdisciplinary forum for exploring

the progress made in understanding,

analyzing, and modeling thermal transport processes and thermally induced

failures in the fabrication, assembly,

and use of logic, memory, and datastorage systems. Major topic areas covered are 1) processing and fabrication, including state-of-the-art semiconductor crystal growing techniques;

thermal stress in wafers, chips, substrates, PC boards, and joints; and

encapsulant behavior with respect to

solidification, outgassing, mechanical

properties, and water vapor diffusion

and absorption; 2) packaging technology,

including means for cooling components

from cryogenic to high temperatures and

reliability as affected by failure

mechanisms such as dopant migration and

interme tallic growth; and 3) peripheral

equipment, including data storage in

both magnetic and optical media and

thermal issues in dot-matrix and thermal

printer heads. The conference is being

held in conjunction with the Electronics

Components Conference (May 9-11) at the same site. [Contact: Frank F. Oettinger, (301) 975-2054]

Planned

Early simmer (Vail, CO)

Combined Short Course on Optical Fiber

and Laser Measurements. [Contact:

Aaron A. Sanders, (303) 497-5341]

Early fall (Boulder, CO)

Fiber Optics Symposium. [Contact:

Aaron A. Sanders, (303) 497-5341]

Late fall (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers (20th Boulder Damage

Symposium). [Contact: Aaron A.

Sanders, (303) 497-5341]

CEEE SPONSORS

National Bureau of Standards

Department of Defense

Defense Nuclear Agency; Defense

Advanced Research Projects Agency;

National Security Agency;

Combined Army/Navy/Air Force

Calibration Coordination Group

U.S. Air Force

Newark Air Force Station; Rome Air

Development; Space & Missile

Organization; Hanscom Air Force Base;

Wright-Patterson Air Force Base

U.S. Army

Aviation System Command; Fort

Belvoir; Fort Monmouth; Harry Diamond

Laboratories; Materials & Mechanics

Research; Strategic Defense Command

U.S. Navy

Naval Surface Weapons Center; Naval

Ocean Systems Center; Naval Ordnance

Systems Command; Naval Air Test

Center; Ordnance Disposal Technology

Center; Weapons Support Center/Crane;

Office of Naval Research; Naval Air

Engineering Center

Department of Energy

Energy Systems Research; Fusion

Ehergy; High Energy & Nuclear

Physics; Bonneville Power

Administration

Department of Justice

Law Enforcement Assistance

Administration

Nuclear Regulatory Agency

Department of Treasury

Bureau of Engraving and Printing

Department of Transportation

National Highway Traffic Safety

The Charles Stark Draper Laboratory

International Copper Research

Association

Sandia National Laboratories

University of California

Los Alamos Scientific Laboratory
NBS-114A (rev. 2 -ec) U.S. DEPT. OF COMM. 1. PUBLICATION OR 2. Performing Organ. Report No. 3. Publication Date BIBLIOGRAPHIC DATA

REPORT NO.

October 1987 SHEET (See instructions) NBSIR 87-3655

4. TITLE AND SUBTITLE

Center for Electronics and Electrical Engineering Technical Publication Announcements

Covering Center Programs, January-March 1987, with 1987 CEEE Events Calendar

5. AUTHOR(S)

E. Jane Walters, compiler

6. PERFORMING ORGANIZATION (If joint or other than NBS, see instructions)

NATIONAL BUREAU OF STANDARDS

U.S. DEPARTMENT OF COMMERCE

GAITHERSBURG, MD 20899

7. Contract/Grant No.

8. Type of Report & Period Covered

January-March 1987

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City. State, ZIP)

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

10.

SUPPLEMENTARY NOTES

All technical information included in this document has been previously approved for

publication

.

I ~1 Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11.

ABSTRACT (A 200-word or less factual summary of most significant information. If document Includes a significant

bibliography or literature survey, mention it here)

This is the twelfth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. This issue of the Center for Electronics and Electrical

Engineering Technical Publication Announcements covers the first quarter of

calendar year 1987. Abstracts are provided by technical area for papers published

this quarter. 12.

KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate Jcey words by semicolon s) antennas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers; semiconductors; superconductors

13. AVAILABILITY

1 y | Unlimited

| | For Official Distribution. Do Not Release to NT,IS

! n Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C.

20402.

[X] Order From National Technical Information Service (NT1S), Springfield. VA. 2216)

14. NO. OF

PRINTED PAGES

21

15. Price

$9.95

USCOMM-DC 6043-P80


U.S. DEPARTMENT OF COMMERCE

NATIONAL BUREAU OF STANDARDS

GAITHERSBURG. MD 20699

RETURN POSTAGE GUARANTEED

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KEY CONTACTS: Center Headquarters (720) Director, Mr. Judson C. French (301) 975-2220

Deputy Director, Mr. Robert I. Scace (301) 975-2220

Electrosystems Division (722) Chief, Dr. Oskars Petersons (301) 975-2400

Electromagnetic Fields Division (723) Chief, Dr. Ramon C. Baird (303) 497-3131

Electromagnetic Technology Division (724) Chief, Dr. Robert A. Kamper (303) 497-3535

Semiconductor Electronics Division (727) Chief, Mr. Frank F. Oettinger (301) 975-2054

INFORMATION;

For additional Information on the Center for Electronics and Electrical Engineering, write or call:

Center for Electronics and Electrical Engineering

National Bureau of Standards

Metrology Building, Room B-358

Gaithersburg, MD 20899

Telephone (301) 975-2220