NBSIR 86-3424

NBS

PUBLICATIONS

Center for Electronics and

Electrical Engineering

Technical

Publication

Announcements

Covering Center Programs,

October to December 1 985 with

1986 CEEE Events Calendar

July 1986

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899
INTRODUCTION TO THE CEEE TECHNICAL PUBLICATION ANNOUNCEMENTS

This is the seventh issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. Ihis issue of the CEEE Technical Publication Announcements

covers the fourth quarter of calendar year 1985.

Organization of Bulletin ; Ihis issue contains citations and abstracts for Center

papers published in the quarter. Entries are arranged by technical topic as identified in the table of contents and alphabetically by first author within each topic.

Following each abstract is the telephone number of the individual to contact for more

information on the topic; unless otherwise noted, this person is the first author.

This issue also includes a calendar of Center conferences and workshops now planned

for calendar year 1986, an announcement of recently issued standard reference materials, and a list of sponsors of the work.

Center for Electronics and Electrical Engineering : Center programs provide national

reference standards, measurement methods, supporting theory and data, and traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U.S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

Hie work of the Center is divided into two major programs: the Semiconductor Technology Program, carried out by the Semiconductor Electronics Division (formerly the

Semiconductor Materials and the Processes and Semiconductor Devices and Circuits

Divisions) in Gaithersburg, MD, and the Signals and Systems Metrology Program,

carried out by the Electrosystems Division in Gaithersburg and the Electromagnetic

Fields and Electromagnetic Technology Divisions in Boulder, CO. Key contacts in the

Center are given on the back cover; readers are encouraged to contact any of these

individuals for further information.

Center sponsors : The Center Programs are sponsored by the National Bureau of Standards and a number of other organizations, in both the Federal and private sectors;

these are identified on page 24.

Note on Publication Lists : Guides to earlier as well as recent work are the publi ra- tion lists covering the work of each division. Ihese lists are revised and reissued

on an approximately annual basis and are available from the originating division.
CEEE Technical Publication Announcements - July 1986

TABLE OF CONTENTS

INTRODUCTION .

KBS

RESEARCH

information CENTER fSg&jZ

Page 1 jJ

inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM

Silicon Materials 2 Analysis Techniques . 2 Gallium Arsenide Materials 3 Power Devices 3 Insulators and Interfaces . . 4

Dimensional Metrology 4

Integrated Circuit Test Structures .... 5 Process and Device Modeling 7 Radiation Effects 10

Packaging 10

Other Semiconductor Metrology Topics 10

SIGNALS AND SYSTEMS METROLOGY PROGRAM

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 11

Waveform Metrology 11

Cryoelectronic Metrology 15

Antenna Metrology 15

Microwave Metrology 16

Laser Metrology 17

Other Fast Signal Topics 17

ELECTRICAL SYSTEMS 18

Power Systems Metrology 18

Superconductors 18

ELECTROMAGNETIC INTERFERENCE 19

1986 CEEE CALENDAR 2 2 RECENTLY ISSUED STANDARD REFERENCE MATERIALS 22

CEEE SPONSOR LIST 24

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 2 CEEE Technical Publication Annoucements - July 86

SEMICONDUCTOR TECHNOLOGY PROGRAM

Silicon Materials

Forman, R.A., Bell, M.I. , Myers, D.R.,

and Chandler-Horowitz, D. , The Raman

Spectrum of Carbon in Silicon, Japan- ese Journal of Applied Physics, Vol.

24, No. 10, pp. L848-L850 (1985).

Raman spectroscopy is used to characterize carbon-doped silicon samples prepared by ion implantation and pulsed

laser annealing. Sharp lines are observed in the Raman spectra due to the

12C local mode at 604 ± 1 cm-1 and the

1 3 C local mode at 589 ± 1 cm-1 . At the

highest carbon densities, these local

modes broaden considerably. Identical

spectra are obtained from a given carbon

implant whether it is annealed using a 10-ns pulsed ruby laser or a 1 -ys pulsed

rhosium 6G dye laser. It is shown that

Raman spectroscopy has sufficient sensitivity to detect striated carbon distributions in as-grown commercial silicon.

Finally, at high carbon density in the

implanted and laser-annealed samples, a disorder-induced first-order Raman spectrum is observed, produced by the mass defect of the subs titutional carbon.

[Contact: (301) 921-3786]

Mayo, S., Lowney, J.R., and Bell, M.I.,

Evidence of Lattice Relaxation in

Platinum-Doped Silicon, Proceedings

of the Materials Research Society 1985

Spring Meeting, San Francisco, California, April 15-18, 1985, Vol. 46, pp.

297-306.

The photoionization cross section of the

platinum-acceptor level in silicon was measured (in relative units) as a function of photon energy. Capacitance

transients due to electron emission from

this level were studied in a p

+n gated

photodiode at temperatures of 40, 60,

and 80 K. Measurements were made over

the wavelength range of 2 to 5 ym with

light from a prism monochromator with a constant bandpass of 10 meV. The platinum density in the diode was about 10 14 cm-3

, providing a ratio of deep to shallow (phosphorus) levels of about 1:10.

The data are in good agreement with the

Ridley-Amato lattice-coupling model when

a Huang-Rhys parameter of S = 0.3 is

used, corresponding to a Frank-Condon

shift of 15 meV if an average phonon

energy of 50 meV is assuned. The electronic energy of the acceptor level was

226 ± 5 meV below the conduction band,

independent of temperature and in agreement with previous studies of thermal

ionization. Hie present results provide

the first clear experimental evidence of

lattice relaxation associated with a deep level in silicon. However, the

observed Huang-Rhys parameter is smaller

than the theoretical estimates of

Lowther (S = 1), suggesting that multiphonon emission may not be the only

mechanist! for carrier recombination

involving this level.

[Contact: (301) 921-3786]

Thurber, W.R., and Lowney, J.R., Electrical Transport Properties of Silicon,

VLSI Handbook, Chapter 14, N. G.

Einspruch, Ed. (Academic Press, NY,

1985), pp. 177-190.

This short review of the electrical

transport properties of silicon was written as a chapter for a VLSI handbook. The titles of the seven sections

are: (1 ) Definition of Transport,

Transport Equation; (2) Conversion Between Resistivity and Dopant Density;

(3) Mobility of Charge Carriers; (4)

Temperature Dependence of Resistivity

and Mobility; (5) Dependence of Drift

Velocity on Electric Field; (6)

Minority-Carrier Mobility, Lifetime, and

Diffusion Length; and (7) Mobility in an MOS Inversion Layer. The chapter includes 5 tables, 7 figures, and 35 ref- erences.

[Contact: (301) 921-3786]

Analysis Techniques

Baghdadi, A., and Gladden, W.K., ADC

Errors in Quantitative FT-IR Spectroscopy, Proceedings of the SPIF - Th *• International Society for Optical Engineering, Vol. 553, Fourier and Comput-
CEEE Technical Publication Announcements - July 86 Page 3

Analysis Techniques , cont'd.

erized IR Spectroscopy, pp. 207-209

[paper given at conference, Ottawa,

Canada, June 24-28, 1985].

Analog-to-digital converters (ADCs) are

the interface between the analog data

actually collected by a Fourier transform infrared ( FT-IR) spectrophotometer

and the digital computer which processes

these data. In the typical case of

absorption spectra obtained using a broadband source, interferograms with a very wide dynamic range (typically on

the order of 10 6 :1) are required in

order to produce spectra with adequate

signal- to-noise ratios. This is a very

demanding application, especially for a high-speed ADC. A numerical model of

the effect of ADC errors, of ±1 least

significant bit (LSB), shows that they

can produce errors as large as 50% on

the height of peaks in an absorbance

spectrum at low signal levels. This

result is consistent with our experimental observations. Four ADC circuit

boards (all the same model) were tested

in the NBS FT-IR spectrometer. At low

signal levels, the disagreement between

peak heights in spectra collected using

the different ADC boards ranged as high

as 30%, even though none of them produced the low-wavenumber distortions

characteristic of inadequate ADC performance. The static transfer characteristics of each of the ADCs was determined using an automated test facility

at the National Bureau of Standards.

These tests showed that the boards produced errors ranging only up to 2 LSBs,

in qualitative agreement with our nu- merical model.

[Contact: (301) 921-3786]

Gallium Arsenide Materials

Forman, R.A., Bell, M.I., and Mayo, S. , Rapid X-Ray Topographic Examination of

GaAs Crystals, Defect Recognition and

Image Processing in III-V Compounds, J.

P. Fillard, Ed. (Elsevier, Amsterdam,

1 985) , pp. 55-62 [proceedings of

symposium held in Montpellier, France,

July 2-4, 1 985],

The design of a low-cost, high-throughput x-ray topography system is described, and its use in the the examination of commercial gallium arsenide

(GaAs) wafers is demonstrated. Doublecrystal reflection (Bragg) topographs

are obtained in two minutes and transmission (Laue) topographs in fifteen

minutes, using copper Ka radiation

from a conventional 1-KW, fine-focus,

laboratory x-ray source. Reflection

topographs of typical GaAs wafers using

selected diffracting planes are presented, and their relative sensitivity

to various defects discussed. In crystals grown by the liquid-encapsulated

Czochralski method, transmission topographs using the (022) planes display

the well-known large-scale dislocation

patterns produced by relaxation of thermoelastic stress.

[Contact: (301) 921-3786]

Power Devices

Blackburn, D.L. , Turn-Off Failure of

Power MOSFETs , Proceedings of the

16th Annual IEEE Power Electronics

Specialists Conference, Toulouse,

France, June 24-28, 1985, pp. 429-435.

Experimental results of the failure of

power MOSFETs during turn-off are discussed. It is shown that the electrical

characteristics of these devices during

failure are identical to those of a bipolar transistor undergoing second

breakdown. Other comparisons of the

power MOSFET failure and bipolar second

breakdown are made. A nondestructive

measurement system is used, allowing

repeated measurements of the failure

characteristics as a function of various

parameters to be made on single devices.

It is shown that practical, commercial

power MOSFETs do not fail as a result of

dV(DS)/dt (rate of rise of drain voltage) currents. Drain voltage slew rates

up to 22 V/ns were studied. Other mea- surements show that the drain voltage at

which failure occurs increases with

temperature, the critical current above
Page 4 CEEE Technical Publication Announcements - July 86

Power Devices , cont'd.

which failure occurs increases with

temperature, the critical current above

which failure occurs decreases with

temperature, and the magnitude of the

load inductance has no effect on the

failure. The results of this study are consistent with the theory that activation of the parasitic bipolar transistor

initiates the power MOSFET failure.

[Contact: (301) 921-3621]

Insulators and Interfaces

Chandler-Horowi tz , D. , Ellipsometric

Metrology of Oltrathin Films: Dual

Angle of Incidence, Proceedings of

the SPIE - The International Society

for Optical Engineering, Vol. 565,

Micron and Submicron IC Metrology, pp.

93-95 [paper given at conference, San

Diego, California, August 22-23,

1 985] .

Single angle of incidence ellipsometric

measurements have been extended to dual

angle measurements on a newly con- structed multi-method precision ellipsometer in order to determine better the

optical constants of a substrate. Fallowing the measurement error analysis

that was prescribed in an earlier paper

for single angle of incidence and fixed

wavelength measurements, the results for

dual angle of incidence are presented

here. Using an Explicit Error Analysis

(EEA) method, involving the differentials of the measurable optical con- stants of the surface, it is possible to

find a well-defined combination of incident angles to perform the measurement.

Without a measurement error analysis,

there would be no way to know what the

absolute measurement uncertainty is or what angles of incidence provide optimum

measurement conditions.

As was the case for the single angle of

incidence measurement where there was an optimum angle of incidence to assure the

highest measurement accuracy, the dual

angle of incidence measurement also predicts the two optimum angles of incidence. It was found that in the case of

single angle of incidence ellipsometry

the principal angle of incidence can sharply define the optimum angle for

measuring bare substrates and very thin

films on a substrate. Likewise, for the

dual angle of incidence measurement,

there can also be two sharply defined

angles for certain sample surface

models. Results are given for a dual

angle ellipsometric measurement of the

real part of the refractive index of a silicon substrate at the wavelength of

632.8 nm. A silicon dioxide film thickness between 1 25 and 1 50 nm and the two

angles of incidence, 68 and 72 deg,

optimized this measurement. The real

part of the refractive index of the

silicon substrate was found to be 3.865

± 0 . 001 . [Contact: (301) 921-3625]

Dimensional Metrology

Kirk, C.P., and Nyyssonen, D. , Modeling the Optical Microscope Images of

Thick Layers for the Purpose of Linewidth Measurement, Proceedings of the

SPIE - The International Society for

Optical Engineering, Vol. 538, Optical

Micro lithography IV, pp. 1 79-187 [paper

given at conference, San Francisco,

California, March 1 3-1 4, 1985].

A monochromatic, waveguide model is

presented which can predict the optical

microscope images of thick-layer objects

including multi-layer structures; sloping, curved, and undercut edges; granular structures such as polysilicon; and

asymmetric objects. The model is used

to investigate the effects of line

structure on the optical image, and good

agreement with experimentally obtained

optical image profiles is demonstrated.

Implementation of the model is described

by way of example, and the measurements

involved in the different stages of

manufacturing an MOS device are discussed.

[Contact: Robert D. Larrabee (301)

921-3625]

Nyyssonen, D. , Focused- Beam Con-
CEEE Technical Publication Announcements - July 86 Page 5

Dimensional Metrology / cont' d.

ventional Bright-Field Scanning Microscopy for Integrated Circuit Metrology,

Proceedings of the SPIE - The International Society for Optical Engineering, Vol. 565, Micron and Submicron IC

Metrology, pp. 102-1 07 [paper given at

conference, San Diego, California,

August 22-23, 1 985].

Current optical instrumentation being

developed for critical dimension mea- surements in the integrated circuit

industry is following one of two very

different optical designs, i.e., either

a focused laser beam which scans the

wafer or the more conventional brightfield microscope. Traditional optical

design lore has described these systems

as "equivalent" based on the principle

of reciprocity. More recent research

has shown that the responses of these

two types of systems are not equivalent

for imaging of structures patterned in

thin films, such as those found in integrated circuit wafer fabrication. This

lack of reciprocity is the result of the

dependence of the diffraction pattern on

the angle of incidence of the illumination. The impact of the lack of reciprocity on the design and calibration of

critical dimension measurement systems

is discussed.

[Contact: Robert D. Larrabee (3 01)

921-3625]

Nyyssonen, D. , and Postek, M.T., SEMBased System for Calibration of Linewidth SRMs for the IC Industry, Proceedings of the SPIE - The International Society for Optical Engineering,

Vol. 565, Micron and Submicron IC

Metrology, pp. 180-186 [paper given at

conference, San Diego, California,

August 22-23, 1985].

The National Bureau of Standards is

currently developing a new scanning

electron microscope-based linewidth

measurement system for future calibration of standard reference materials for

the IC industry. This system incorporates a piezo/interferometric stage

for precise translational motion and the

monitoring of distance, improved

vibration isolation, microprocessor

stage control system, and computer data

analysis. Ihe specifications incorporated into the system are designed for

the measurement of linewidth dimensions

from 0.1 to 2 ym with a precision of

0.002 ym. The design philosophy of the

system is discussed along with the cur- rent limitations of accurate edge detection in SEM-based systems.

[Contact: Michael T. Postek (3 01)

921-3625]

Integrated Circuit Test Structures

Cresswell, M.W., Linholm, L.W., Coleman,

E.S., and Partlow, W.D., Design,

Fabrication, and Testing of an Interconnect Test Structure for Evaluating

VLSI Processes, 1985 Digest of

Papers, Government Microcircuit Applications Conference (GOMAC) , Orlando,

Florida, November 5-7, 1985, pp. 359-

360.

This paper describes a systematic approach to the comparative experimental

evaluation of alternative sub-micron

lithographic methods using microelectronic test structures. Measurements

are presented for both polysilicon and

aluminum lines with design geometries of

0.6 to 2.0 ym. These structures provide

unambiguous results which can be used as

a tool to improve the control and performance of VLSI devices.

[Contact: Loren W. Linholm (301) 921-

3801]

Lie, L. , Pramanik, D. , Saxena, A.N. , Mazer, J.A., and Linholm, L.W., Contact Resistance of Al-1 %Si-0. 5%Cu and

Al/TiW/PtSi Metallization, Proceedings of the 1985 IEEE VLSI Multilevel

Interconnection Conference, Santa

Clara, California, June 24-26, 1985,

pp. 201-210.

The specific contact resistivity, p c , has been measured using six-terminal

Kelvin contact resistor test structures

with contacts of varying sizes. Values
Page 6 CEEE Technical Publication Announcements - July 86

IC Test Structures , cont'd.

of p c were determined for Al-1%Si0.5%Cu metallizations to n+ and p

+ silicon junctions having different surface

concentrations, C^,. The magnitude of

pc was found to decrease with increasing C0 . Values of p c were also

determined for Al/TiW/PtSi contact

metallizations to n

+ and p

+ and were found to be at least two times lower

than that for Al-Si metallization.

Also, the variation of p c across the

wafer for PtSi was found to be less than

that for Al-Si. This indicates that

Al/TiW/PtSi metallizations offer advantages when compared to Al-Si metallization and can contribute to improved

performance of future VLSI circuits.

[Contact; Jeffrey A. Mazer (301) 921-

3801]

Linholm, L.W., Yen, D. , and Cresswell,

M.W., Electrical Linewidth Measurement in the Near- and Sub-Micron Linewidth Region, Proceedings of the

Third Electrochemical Society International Symposium on VLSI Science and

Technology, Toronto, Canada, May 12-17,

1985, pp. 299-308.

The measurement accuracy of the cross- bridge resistor test structure and test

method has been compared to well-characterized optical measurements for samples

with near-micron and sub-micron design

dimensions patterned in polysilicon

films. Results are presented which show

that the electrical measurements agree

with the corresponding optical measurements to within the respective uncer- tainties of both measurements.

[Contact; (301) 921-3801]

Radack, D. J. , Yao, C.T., Linholm, L.W.,

Galloway, K. F., and Lin, H.C., Comparison of Microelectronic Test Structures for Propagation Delay Measurements, Microelectronics Journal, Vol.

16, No. 6, pp. 39-46 (1985).

Propagation delay is a parameter which

needs to be accurately measured for

characterization of VLSI fabrication

technologies and VLSI circuit design.

In this experiment, three different

microelectronic test structures or test

circuits were used to measure the propagation delay of a minimally sized CMOS

inverter. The measured results and a comparison of the test circuits are presented.

[Contact: (301) 921-3801]

Roenker, K.P. , Harner, B.L. , and Linholm, L.W., An NMOS Test Chip for

Instruction in Semiconductor Parameter

Measurements, Proceedings of the

Sixth Biennial University/Government/Industry Microelectronics Symposium, Auburn, Alabama, June 1 1-1 3, 1985,

pp. 77-81.

This paper describes an NMOS test chip,

NBS-40, designed for use in a graduatelevel course in the measurement of semiconductor parameters using test structures. The rationale and objectives of

a parameter measurements course are discussed, and the organization and

results of a course offered at the University of Cincinnati are described.

The test chip layout and test structures

are briefly described, and parameter

measurements using the test structures

are discussed. An NBS technical report

describing the test chip has been prepared and is available as a student

reference [NBSIR 84-2822] . Examples of

recent measurement results obtained on chips fabricated through the MOSIS

service are provided to demonstrate the

functionality of the chip.

[Contact: Loren W. Linholm (301) 921-

3801]

Schafft, H.A., Standards for Electromigration Testing, Final Report, 1984

Wafer Reliability Assessment Workshop,

Lake Tahoe, California, September

30-October 3, 1984, pp. 91-106 (1985).

This is an edited transcript of a talk

given at the 1984 Wafer Reliability

Assessnent Workshop which includes questions, comments, and responses. The

talk described plans for an interlaboratory experiment and other work that is
CEEE Technical Publication Announcements - July 86 Page 7

IC Test Structures , cont'd.

tory experiment and other work that is

intended to lead to an improved way for

characterizing metallizations from the

point of view of electromigration. The

talk outlined the steps of the interlaboratory experiment, discussed some of

the design features of the test structures to be used, described the electromigration test chip, and mentioned some of the experiments that are to be performed.

[Contact: (301) 921-3801]

Schafft, H.A., Grant, T.C., Saxena,

A.N., and Kao, C.-Y. , Electromigration and the Current-Density Dependence, Proceedings of the 23d Annual

International Reliability Physics Symposium, Orlando, Florida, March 26-28,

1985, pp. 93-99.

The empirical expression used to predict

metallization resistance to electromigration failure involves the current

density to a power of n. A value for n of 1.5 was obtained from stressing

unpassivated Al-1%Si metallization test

structures over a range of current

densities of from 0.5 to 2.5 MA/cm 2 . The steps taken to ensure an accurate

estimate of the metallization stress

conditions of temperature and current

density to obtain this value are

described in detail.

[Contact: (301) 921-3801]

Process and Device Modeling

Albers, J. , Monte Carlo Calculation of

One- and Two-Dimensional Particle and

Damage Distributions for Ion-Implanted

Dopants in Silicon, IEEE Transactions

on Electron Devices, Vol. ED- 32, No.

10, pp. 1930-1939 (1985) [joint issue

with IEEE Transactions on ComputerAided Design, Vol. CAD-4, pp. 374-383] .

The two-dimensional distributions of

particles, primary damage, Frenkel

pairs, and electronic and nuclear energy

loss were calculated for implantation of

a line source into silicon targets by

using the TRIM Monte Carlo code. In

addition, the Kinchin-Pease equation was used to calculate approximate twodimensional distributions of the Frenkel

pairs (vacancy-interstitial) created by

the primary displacement damage of the

target atoms. These distributions allowed for the calculation of the one- dimensional distributions of these quantities for implantation into unmasked

targets. The two-dimensional distributions of particles and approximate

Frenkel pairs for implantation past a mask edge were constructed by means of

superposition. The results are important for understanding the mass, energy,

and dose dependence of implantation and

the associated displacement damage.

[Contact: (301) 921-3621]

Albers, J. , and Berkowitz, H.L., An

Alternative Approach to the Calculation

of Four-Probe Resistances on Nonuniform

Surfaces, Journal of the Electrochemical Society, Vol. 132, No. 10, pp.

2453-2456 (1985)

An alternative approach to the calculation of four-probe resistances of structures having nonuniform resistivity is

presented. The basis of this approach

is the form of the spreading resistance

correction factor integral as given by

Berkowitz and Lux. When this form is

used, the difference of the spreading

resistances involved in the four-probe

resistance may be written as a simple

integral which does not contain Bessel

functions. Also, the derivative of the

spreading resistance which is involved

in the probe-spacing experiment simulation yields a simple algebraic expression. The resulting equations for the

four-probe resistance and the derivative

function are formally shown to be independent of both the probe radius and the

probe-current density and involve only

the kernel of the spreading resistance

correction factor integral (sometimes

known as the integrating factor) . For

the case of a uniform layer over insulating, conducting, or no boundaries (a

semi-infinite slab) , analytic expressions are derived for the four-probe
Page 8 CEEE Technical Publication Announcements - July 86

Process & Device Modeling , cont'd.

resistance and the derivative function

and are investigated as a function of

the probe spacing. For nonuniform

resistivity structures, a relatively

simple numerical procedure is used for

the evaluation of the four-probe resistance integral. The results obtained

from this numerical technique for the

four-probe resistance and the algebraic

expression for the derivative function

are compared with those obtained from

more extensive numerical techniques and

are shown to be in excellent agreement.

The evaluation of the four-probe resistance and the derivative function by

means of the variational technique

described by Choo and coworkers is presented. A caveat concerning the use of

the Gauss-Laguerre technique for calculating the four-probe resistance is also

discussed.

[Contact: (301) 921-3621]

Bennett, H.S., and Fuoss, D.E., Improved Physics for Simulating Submicron

Bipolar Devices, IEEE Transactions

on Electron Devices, Vol. ED-32, pp.

2069-2078 (1985) [joint issue with IEEE

Transactions on Computer-Aided Design,

Vol. CAD-4, pp. 513-522 (1985)].

The conventional device physics in most

nunerical simulations of bipolar transistors may not predict correctly the

measured electrical performance of shallow, heavily doped emitters and bases.

This paper presents improved device

physics for numerical simulations of

solid-state devices with dopant densities up to about 3 x 10 20 cm

and with

junction depths as small as 0.1 ym.

This improved device physics pertains to

bandgap narrowing, effective intrinsic

carrier concentrations, carrier mobilities, and lifetimes. When this improved

device physics is incorporated into

device analysis codes such as SEDAN and

then used to compute the electrical

performance of npn transistors, the

predicted values agree very well with

the measured values of the currentvoltage characteristics and dc commonemitter gains for junction depths between 10 jjm and 0.16 )jm.

[(301) 921-3621]

Marchiando, J.F., Roitman, P. , and

Albers, J. , Verification of a Model

for Boron Diffusion in Silicon, IEEE

Transactions on Electron Devices, Vol.

ED-32, No. 11, pp. 2322-2330 (1 985).

Understanding the effects of high- and

low-temperature anneals of boron implanted in silicon is important in the

calculation of shallow p-n junction

profiles used as source and drain in

p-channel MOSFETs. Here, a sample ma- trix of boron implanted into silicon

over a range of fluences and annealing

temperatures is considered. The matrix

of samples was measured by SIMS (secondary ion mass spectrometry) . The mea- sured profiles were compared with simulations from an annealing/diffusion

model. Calculations of the annealed

profiles were found to be in agreement

with the SIMS data at temperatures

greater than 1000°C. At lower temperatures, the profiles exhibit effects due

to implantation damage which are not

included in the diffusion model.

[Contact: (301) 921-3621]

Roitman, P. , Wilson, C.L. , Blue, J.L. , and Gallcway, K. F., Measurement* for

Accurate MOS Transistor Simulation,

Proceedings of the Third International

Workshop on Physics of Semiconductor

Devices, DeJ.hi, India, November

27-December 2, 1985, pp. 69-77.

Measurements and input data required for

accurate numerical simulation of MOS

transistor characteristics are described. Techniques for determining

dopant atom distributions, geometric

parameters, and carrier mobility in the

channel are discussed. The results are used to simulate the electrical characteristics of self-a ligned, silicon-gate,

n-channe 1 MOSFETs with phosphorus

source—drains having channel lengths of

0.80 pm, 1.83 pm, and 8.17 gm. It is

possible to model the drain current for

all of the transistors studied without
CEEE Technical Publication Announcements - July 86 Page 9

Process & Device Modeling , cont'd.

adjustable parameters. If sufficiently

accurate parameters are available, the

characteristics of submicron transistors

can be predicted with ±5% accuracy.

[Contact: (301) 921-3621]

Wilson, C.L. , Using Silicon Device

Modeling Techniques for GaAs Devices,

Technical Digest, 1985 International

Electron Devices Meeting, Washington,

D.C., December 1-4, 1985, pp. 78-81.

Numerical models have been developed for

Si MOSFETb which achieve high accuracy

and retain numerical stability and physical flexibility. The methods used in

these models can be applied to GaAs

MESFETS to yield a computer model which

retains the accuracy and robust numerical properties of two-dimensional Si

MOSFET models, yet retains most of the

physical detail of Monte Carlo simulation. Two significant differences between this model and previous models

result. First, by incorporating intraband scattering directly, high field

regions of the device are seen to be

dominated by alternate regions in which

conduction by central valley and satellite valley electrons dominate. Second,

the two-dimensional field shape in the

part of the transistor between the gate

and the drain is critical in calculating

the intraband scattering and in determining the average effective mobility.

[Contact: (301) 921-3621]

Wilson, C.L. , and Blue, J.L. , Accurate

Current Calculation in Two-Dimensional

MOSFET Models, IEEE Transactions on Electron Devices, Vol. ED-32, No. 10,

pp. 2060-2068 (1985) [joint issue with

IEEE Transactions on Computer-Aided

Design, Vol. CAD-4, pp. 504-512

(1985) ] .

Two-dimensional simulations of MOSFETh are widely used for the design of shortchannel transistors used in VLSI circuits. These models use low-order methods of discretization of solution variables. In this paper, a method of current calculation is presented which

works with these methods and yields good

accuracy. The method uses integration

of the solution variables, rather than

differentiation, and is similar to applying Ohm's law in two dimensions.

[Contact: (301) 921-3621]

Wilson, C.L., Roitman, P. , and Blue,

J. L . , High Accuracy Physical Modeling

of Submicron MOSFETs, IEEE Transactions on Electron Devices, Vol. ED-32,

No. 7, pp. 1246-1258 (1985).

Using the data obtained from the mea- surements described in this work, it is

possible to model the drain current for

all of the transistors studied with no adjustable parameters. Transistors with

0.81-ym channel length differ in model

input from those with 8.17-pm channel

length only in the length of the polysilicon gate. The accuracy of the simulation is maintained over the subthreshold, triode, and saturation regions and

is comparable for all channel lengths.

[Contact: (301) 921-3621]

Wilson, C.L. , and Russell, T.J. , TwoDimensional Modeling of Channel HotElectron Effects in Silicon MOSFETs,

Tech. Digest, 1985 International Electron Devices Meeting, Washington, D.C.,

December 1-4, 1985, pp. 72-75.

Earlier models have successfully modeled

currents associated with device degradation due to channel hot-electrons. In

this work, a high accuracy twodimensional model of a silicon MOSFET is

combined with a model of the Si0 2 ~Si

interface which includes both the energy

dependence of the interface traps within

the silicon bandgap and the positional

dependence of the oxide charge and the

interface traps along the channel of the

transistor. This model allows the

effects of channel hot-electrons on the

sub threshold, linear, and saturation

region after injection of the device to

be modeled without introducing free

parameters.

[Contact: (301 ) 921-3621]
Page 1

CEEE Technical Publication Announcements - July 86

Process & Device Modeling , cont' d.

Witte, L. C . , CSPITs A FORTRAN Program

for Charge-Sheet Model Fitting of

MOSFET Data, NBSIR 85-3145 (November

1 985) .

A FORTRAN program, CSFIT, has been developed for fitting an expression for

the current-voltage (I-V) characteristics of a long-channel MOSFET to experimental I-V curves. The one-dimensional

charge-sheet model developed by Brews

provides the basis for the I-V characteristics. The I-V characteristics

given by this model are optimized with

respect to a set of experimental data

using the flatband voltage and the mo- bility as the only adjustable parameters. The program is written so that

multiple sets of I-V data can be fit

simultaneously if desired. The user must supply, in specified formats, a current-voltage data file, a device

parameter file, and a starting value

file.

[Contact: Charles L. Wilson (301) 921-

3621]

Radiation Effects

Galloway, K.F., Wilson, C.L. , and Witte,

L.C., Charge-Sheet Model Fitting to

Extract Radiation-Induced Oxide and

Interface Charge, IEEE Transactions

on Nuclear Science, Vol. NS-32, pp.

4461-4465 (1985) .

A method for extracting values of oxide

and interface charge from the currentvoltage (I-V) characteristics of longchannel MOSFETs is described. The onedimensional charge-sheet model developed

by Brews provides the basis for the I-V

characteristics. The I-V characteristics given by this model are optimized

with respect to a set of experimental

data for an irradiated device with the

flatband voltage and the mobility the

only free parameters. Simple relationships between these parameters and the

radiation-induced interface and oxide

charge are assuned.

[Contact: (301) 921-3541]

Galloway, K.F., Wilson, C.L., and Witte,

L.C., MOSFET Electrical Parameter

Extraction from Charge-Sheet Model

Fitting, Proceedings of the Sixth

Biennial University/Government/ Indus try

Microelectronics Symposium, Auburn,

Alabama, June 1 1-1 3, 1 985, pp. 77-81.

A method for extracting the flatband

voltage and the channel mobility from

the current-voltage (I-V) characteristics of long-channel MOSFETfe is described. The one-dimensional chargesheet model developed by Brews provides

the basis for the I-V characteristics.

The I-V characteristics given by this

model are optimized with respect to a set of experimental data with the flatband voltage and the mobility the only

free parameters. A computer program,

CSFIT, has been developed for this purpose. The choice of parameters is usually appropriate for a device subjected

to a stress condition (e.g., hot-carrier

injection or ionizing radiation) . To

illustrate the application of this method and CSFIT, the flatband voltage and

mobility for an n-channel enhancementmode device subjected to ionizing radiation are determined from the I-V curves,

and the changes of these parameters with

radiation dose are tracked.

[Contact: (301) 921-3541]

Packaging

Oettinger, F.F., Thermal Measurements

of VLSI Packages - A Critical Overview, Abstracts of the IEEE VLSI

Packaging Workshop, Gaithersburg, Maryland, September 9-1 1, 1985, pp. 26-29.

Techniques to characterize thermally

ceramic and plastic VLSI packages are discussed. Computer simulations and

both direct and indirect thermal evaluation techniques are highlighted. Limitations and strengths of the various

techniques are identified.

[Contact: (301) 921-3541]

Other Semiconductor Metrology Topics

Stern, E.A., and Bouldin, C.E.

Ma, Y. ,
CEEE Technical Publication Announcements - July 86 Page 1

Other Semiconductor Metrology / cont' d.

The Local Structure at Mn Sites in

Icosahedral Mn-Al Quasicrystals,

Physical Review Letters, Vol. 55, No.

20, pp. 2172-2175 ( 1 985) . Extended x-ray absorption fine structure

(EXAFS) measurements have been made at

the Mn K-edge of quasicrystalline and

crystalline forms of an Al^Mn alloy.

Two different quasicrystalline Mn sites

are discerned to be populated in the

ratio of t within experimental error. The more populous site is similar to

that in the crystal but with bond angle

distortions and elimination of an unusually short Al-Mn bond, while the other

site has additional bond stretching

distortions. The EXAFS measurements

together with density measurements indicate that the volume per Mn-site is

independent of type of site, suggesting

that the quasicrystal is not a Penrose

lattice.

[Contact: Charles E. Bouldin (301)

921-3786]

FAST SIGNAL ACQUISITION, PROCESSING, &

TRANSMISSION

Waveform Metrology

Bell, B.A., Editor, Digital Methods in

Waveform Metrology, Proceedings of a Seminar, NBS Special Publication

707 (October 1985).

Modern electronic instrumentation me- trology in the low-frequency regime

(dc to 10 MHz) was discussed in lecture

talks and papers presented at NBS,

Gaithersburg, MD, on October 18-19,

1 983. The seminar program was organized

into four main session topics.

This special publication contains independent papers that enlarge on subjects

presented at the seminar. Six papers

represent and describe the hardware and

software techniques used for developing

NBS laboratory standards and apparatus

for testing ac sources and voltmeters,

phase angle meters, transient waveform

recorders, wideband wattmeters, and

digital-to-analog and analog- to-digital

converters. Three papers have been

written to supplement the informal ses- sion on Instrumentation Metrology and

are included as Appendices.

[Contact: (301) 921-2727]

Flach, D.R., Characterization of Waveform Recorders, Digital Methods in

Waveform Metrology, Proceedings of a Seminar, NBS Special Publication 707,

pp. 31-54 (October 1985).

Transient waveform recorders have been

in use for more than 15 years with no commonly accepted test procedures for

measuring the performance of these instruments in response to dynamic input

signals. One test procedure that has

been increasingly used by manufacturers

and others in recent years involves the

application of steady-state sinusoidal

waveforms. These tests measure integral

and differential linearity errors, missing codes, signal- to-noise ratios (effective number of bits) , and aperture

uncertainty.

Described are sine-wave tests that use non-linear, least-square curve fit procedures to measure the waveform re- corder' s noise, and thus the signalto-noise ratio. This approach yields a "global" description of the recorder'

errors. A sine-wave test in which the

data are evaluated using a fast Fourier

transform is described. This test is

particularly useful to measure the integral linearity errors of the waveform

recorder. A histogram test, which measures differential linearity errors and

missing codes, is described. Results

are given for the above tests. A method

for measuring aperture uncertainty is

briefly mentioned.

Two NBS-developed test procedures, a single-period transient sinusoidal test

and a test based on the NBS voltage-step

generator, are also described, and test

results are given.

[Contact: (301) 921-2727]
Page 1

CEEE Technical Publication Announcements - July 86

Waveform Metrology , cont' d.

Halford, D. , Transparency Metrology of

Signal to Noise Ratios of Noisy BandLimited Digital Signals, NBS Ttech.

Note 1 077 (June 1985) .

I propose the use of a template method

for quantitative, correct, and transparent measurement of signal power to

additive noise power ratios (SNRs) of

digital signals and systems under full

operating conditions. Outer guard chips

of digital templates hold intersymbol

interference fixed on inner target chips

in realizations of the respective template patterns in traffic. The proposed

template method needs to be developed

and proven as a potentially valuable

metrology capability; it can be especially important for real-time on-line

performance assessment and monitoring of

digital communication systems.

A correct measurement procedure by definition actually measures a specified

parameter of a specified signal, channel, device, or system. A transparent

measurement procedure by definition

measures the specified parameter without

degradation of the usable channel capacity and without modification to or interference with the functioning of the

measured system.

I discuss the significance of transparent metrology, the measurement of

various SNRs by. the template method, and

the general applicability of the template method for measurements on any

noisy digital signal. The template

method can provide transparent metrology

procedures for other basic measurands,

e.g., intersymbol interference, multiplicative noises, and synchronization.

[Contact: (303) 497-5475]

Laug, O.B., A Wide-Band Transconductance Amplifier for Current Calibrations, IEEE Transactions on Instrumentation and Measurement, Vol. IM-34,

No. 4, pp. 639-643 (December 1985).

A wide-band transconductance amplifier

for current calibrations is described.

The amplifier will deliver a groundreferenced constant current of 5 A rms from dc to over 100 kHz. Its stable

magnitude and phase permit it to be used

in precise power calibration systems to

provide the current component of a phantom power source. The amplifier also

provides a ground-referenced voltage

output of 1 V/A for monitoring the magnitude and phase of the output current.

[Contact: (301) 921-2727]

Laug, O.B., Stenbakken, G.N. , and Leedy,

T.F., Electrical Performance Tests

for Audio Distortion Analyzers,

NBSIR 85-3269 (November 1985).

Electrical performance test procedures

for audio distortion analyzers were developed by the National Bureau of

Standards for the U.S. Army Communications-Electronics Command. The report

provides detailed, step-by-step test

procedures that are based on specifications supplied by the Army for the

purpose of evaluating audio distortion

analyzer bid samples. Examples of data

sheets and tables are also provided for

recording interim and final results.

The report discusses the philosophy of

each measurement procedure with a view

toward providing an understanding of the

basic metrology required to perform the

measurements. In addition, the sources

of measurement error are discussed. The

primary applications and basic principles of modern audio distortion ana- lyzers are also described.

[Contact: (301) 921-2727]

Major, J.R., Livingston, E.M., and

Adair, R.T., Automated Measurement of

Frequency Response of FrequencyModulated Generators, Using the Bessel

Null Method, Proceedings of the 4th

Annual Test and Measurement World Expo,

San Jose, California, May 14-16, 1985,

pp. 78-100.

This paper describes a method for determining the frequency response of

frequency-modulated generators, using a
CEEE Technical Publication Announcements - July 86 Page 1

Waveform Metrology , cont'd.

frequency-modulated generators, using a Bessel null method to control frequency

deviation of the test signal applied to

the generator. This test signal is in

the form of a frequency-modulated radiofrequency carrier. A listing is provided of the computer program used in

automating the method. The method applies to generators having an output

frequency in the range 0.45 to 2000 MHz.

Measurements obtained using this technique are more accurate than those obtained by a highly trained technician

using a manual system.

Automated measurement of this process is

desirable since the manual method is

subject to the following problems: (1

)

excessive time, (2) error in finding the

null, and (3) lack of assurance that the

null is the first Bessel null. Automated measurements can be performed

using a system controller, a spectrum

analyzer, a function generator, and a voltmeter (all of which are compatible

and controllable remotely).

The nonlinear relationship between modulating signal amplitude and the center

frequency amplitude of the carrier is a major obstacle to automated measurement.

This problem was solved by obtaining an approximate formula for this nonlinear

curve.

Assurance that the null found is the

first Bessel null is provided by the

analysis of the frequency response of

the test signal generator as displayed

on the spectrum analyzer.

[Contact: (303) 497-3149]

Oldham, N.M., Digital Waveform Synthesis 'Techniques, Digital Methods in

Waveform Metrology, Proceedings of a Seminar, NBS Special Publication 707,

pp. 1-13 (October 1985).

The theory of digital waveform synthesis, including hardware implementations

and practical limitations, is discussed.

The generation of sinewaves as well as

arbitrary waveforms using zero-orderhold and linear-point-connector recon- struction techniques is analyzed. An

NBS-developed sinewave generator which

provides a high-accuracy (50-ppm) signal

from dc to 50 kHz is also described.

[Contact: (301) 921-2727]

Schoenwe tter, H.K., A Programmable

Precision Voltage-Step Generator for

Testing Waveform Recorders, IEEE

Transactions on Instrumentation and

Measurement, Vol. IM-33, No. 3, pp.

196-200 (September 1984).

A pulse generator for testing the approximate step-response of waveform

recorders is described. The initial and

final levels of voltage steps are each

programmable within the range of ±1 V

for a 50-ft termination and within ±5 V

for a high-impedance load. Voltage

steps within these ranges settle to

within ±0.02 percent of full-scale range

in less than 30 and 40 ns, respectively,

for a load capacitance of <30 pF. The

corresponding 10- to 90-percent transition durations are approximately 7 and

1 2 ns. [Contact: (301) 921-2727]

Schoenwe tter, H.K., Settling Time

Measurements, Digital Methods in

Waveform Metrology, Proceedings of a Seminar, NBS Special Publication 707,

pp. 87-1 09 (October 1985).

Methods are described for measuring the

settling times (STs) and other dynamic

characteristics of digital- to-analog

converters, operational amplifiers, and

precision voltage-step generators. The

measurement of device STs from 5 \i s to

less than 20 ns with corresponding

accuracies of 1 ppm and 0.1% is

described.

[Contact: (301) 921-2727]

Souders, T.M., Data Converter Test

Methods, Digital Methods in Waveform

Metrology, Proceedings of a Seminar,

NBS Special Publication 707, pp. 75-85

(October 1 985) .
Page 1

CEEE Technical Publication Announcements - July 86

Waveform Metrology , cont'd.

Data converter test methods pertinent to

measurement or control instrumentation

applications are reviewed. Methods

ranging from simple manual techniques to

comprehensive fully automated approaches

are discussed for both digital- to-analog

and analog- to-digital converters.

Strengths and weaknesses, major applications, and pertinent references are presented for each.

[Contact: (301) 921-2727]

Souders, T.M., and Stenbakken, G.N. , Modeling and Test Point Selection for

Data Converter Testing, Proceedings

of the 1985 IEEE International Test

Conference, Philadelphia, Pennsylvania,

November 19-21, 1985, pp. 813-817.

Methods for generating efficient testing

strategies for data converters are presented. Linear modeling techniques

based on circuit analysis and empirical

test data are included, as well as algorithms for selecting optimal test

points. Using these tools, converter

errors can be accurately estimated for

all code states from a relatively small

number of measurements.

[Contact: (301) 921-2727]

Stenbakken, G.N. , Dual-Channel Sampling Systems, Digital Methods in Waveform Metrology, Proceedings of a Seminar, NBS Special Publication 707, pp.

55-73 (October 1985).

Measuring two signals simultaneously

with a dual-channel sampling system

allows for the calculation of many signal parameters not easily obtained with

single-channel instruments. This paper

concentrates on the use of dual-channel

sampling for the measurement of power

and phase angles. Theoretical interrelationships are developed for sampled

data, measured quantities, and error

sources. Both hardware and software

errors are described. Calibration techniques are given for quantifying many of

the error sources.

[Contact: (301) 921-2727]

Stenbakken, G.N. , Souders, T.M., Lechner, J.A., and Boggs, P.T., Efficient

Calibration Strategies for Linear, Time

Invariant Systems, Proceedings Autotestcon '85, IEEE International Automatic Testing Conference, Uniondale,

New York, October 22-24, 1985, pp.

361-366.

An efficient strategy for accurately

characterizing the frequency response of

linear, time-invariant systems is presented. Ihe approach, based on circuit

modeling, test-point selection, and

parameter estimation, optimizes calibration confidence with respect to test

effort. The analytic tools and methodology needed for designing the strategy are included, together with experimental results. The approach can be

particularly beneficial in volume testing of devices such as amplifiers, attenuators, and filters, or systems whose

frequency response is dominated by such

devices.

[Contact: (301) 921-2727]

Turgel, R.S., Phase Angle Standards

and Calibration Methods, Digital

Methods in Waveform Metrology,

Proceedings of a Seminar, NBS Special

Publication 707, pp. 15-29 (October

1 985)

Measurement of phase angles in the audio

frequency range is discussed with emphasis on precision phase meters and their

calibration using an NBS-developed Phase

Angle Calibration Standard.

[Contact: (301) 921-2727]

Turgel, R.S., A Precision Phase Angle

Calibration Standard for Frequencies up

to 50 kHz, IEEE Transactions on Instrumentation and Measurement, Vol.

IM-34, No. 4, pp. 509-516 (December

1 985) .

A phase angle calibration standard cov- ering a frequency range from 2 Hz to 50

kHz has been designed and constructed.

Digital waveform generation is us»*d to

provide sinusoidal analog outputs havin ; precisely settable phase angles. Output
CEEE Technical Publication Announcements - July 86 Page 1

Waveform Metrology / cont'd.

voltages are independently adjustable

from 0.5 to 1 00 V rms on both channels.

An auto-zero feed-back loop compensates

for differential phase errors of the

output amplifiers.

[Contact: (301) 921-2727]

Cryoelectronic Metrology

Niemeyer, J. , Hinken, J. H. , and Kautz,

R.L., Near-Zero Bias Arrays of

Josephson Tunnel Junctions Providing

Standard Voltages Dp to 1 V, IEEE

Transactions on Instrumentation and

Measurement, Vol. IM-34, No. 2, pp.

1 85-187 (June 1985) .

Josephson voltage standards utilize

microwave-induced constant voltage steps

occurring due to the ac Josephson effect. Existing standards can be considerably simplified and their accuracy

improved by using a large number of

series-connected Josephson tunnel junctions which are operated in the zero- current-step mode. For this purpose,

superconducting millimeter wave integrated circuits have been designed,

fabricated, and tested. Ihe circuits

consist of a broadband taper between the

rectangular waveguide and the planar

structure, the Josephson junction

series, a well-matched load, and dc

pads. Circuits with various numbers of

junctions have been fabricated by photolithographic techniques and tested at

4.2 K in liquid heliun. The version

with 1474 junctions produced voltages up

to 1.2 V when operated at 90 GHz.

[Contact: Richard L. Kautz, (303)

497-3391 or -3988]

Antenna Metrology

Jesch, R.L. , Measured Vehicular Antenna Performance, IEEE Transactions

on Vehicular Technology, Vol. VT-34,

No. 2, pp. 97-107 (May 1985).

Power gain radiation patterns of mobile

antennas mounted in six different locations on a test vehicle were measured

with and without typical lights and

sirens mounted on the roof. The measurements were performed at frequencies

representing the frequency bands of 25

to 50, 1 50 to 1 74, 400 to 512, and 806

to 866 MHz . In addition, special antennas consisting of three disguised antennas operating at discrete frequencies of

40.27, 1 62.475, and 416.975 MHz and one

slot antenna operating at 413 MHz were

also measured. Plots of power gain

radiation patterns are given for the

mobile antennas mounted in six different

locations on the test vehicle and for

the special antennas. Results showing

the effects of poor grounding characteristics are also included. Recommended

locations for mounting the mobile antennas are given for specific frequency

bands.

[Contact: (303) 497-3496]

Muth, L. A., A Theory of Mutual Impedances and Multiple Reflections in an

N-Element Array Environment, Proceedings of the 1985 International Symposium on Antennas and Propagation,

Kyoto, Japan, August 20-22, 1985, pp.

719-722, and Proceedings of 1 985 International Symposiun on Antennas and EM

Theory, Beijing, China, August 26-28,

1985, pp. 440-447 [these papers are

shortened versions of NBS Tech. Note

1078 published in February 1985],

A general theoretical approach is formulated to describe the complex electromagnetic environment of an N-element

array. The theory reveals the elementto-element interactions and multiple

reflections within the array. From the

formulation, it is found that the interaction between an excited element and an open-circuited element can be viewed as the sum of terms describing all possible

signal paths within the array environment which start from the radiating

element and terminate on the element

under observation. Within all paths

except the most direct one, multiple

reflections between subgroups of elements take place. The resulting solution is highly structured and recursive

and is discussed in detail in the text.
Page 1

CEEE Technical Publication Announcements - July 86

Antenna Metrology , cont'd.

Illustrative examples are provided to

facilitate understanding of these

ideas.

[Contact: (303) 497-3603]

Newell, A.C., Francis, M.H., Kremer,

D.P. , and Grimm, K. R., Results of

Planar Near Field Testing with Ultralow

Sidelobe Antennas, Symposiun Digest

of the IEEE/AP—S International Symposium 1985, Antennas and Propagation,

Vancouver, B.C., June 17-21, 1985, pp.

693-698.

An investigation to demonstrate Planar

Near Field measurement accuracy for

ultralow sidelobe antennas is nearing

completion at the National Bureau of

Standards, Boulder, Colorado. The

existing NBS scanner has been modified

to accommodate antennas up to 10m long

and 4 m high. Two antennas will be

measured as part of this research

effort. They are the AWACS (U.S.

Airborne Warning and Control System) and

the ULSA (Ultra Low Sidelobe Antenna)

travelling wave antennas which are,

respectively, 8 m‘ x 1.5m and 6 m x 1 m. Results of tests to introduce controlled

near-field measurement error confirm

predicted far-field sidelobe accuracies

at the ~60-dB level. Additional results

show the utility of a new two-element

probe to extend sidelobe measurement

accuracy by steering a probe pattern

null in the direction of the test

antenna' s mainbeam.

[Contact: (303) 497-3743]

Newell, A.C., and Repjar, A.G. , Development of Near-Field Test Procedures

for Communication Satellite Antennas,

Phase I, Part 1, NBS I R 85-3031

(September 1985).

The purpose of this program is to define

and further develop the capabilities of

near-field antenna test techniques,

specifically for the requirements asso- ciated with the development and verification testing of reconfigurable, multibeam, frequency reuse, commercial satellite antennas. Phase I, Part 1 gives a general survey, definition, and description of near-field and compact range

measurement methods as they apply to

satellite antenna systems testing. Ehch

of these methods is evaluated to determine how well they meet the measurement

requirements. Included for each technique is a summary of the measurement

method, discussions on probe correction

and data processing, measurement hardware considerations, a results-available

section, and measurement accuracy and

range certification considerations. The

basis for the choice of the best mea- surement technique is established with

the planar near-field measurement method

receiving the best score for the directive antennas considered. As a result,

further study will focus on this technique and will be reported on subsequently. A detailed presentation of

planar near-field measurements theory is

presented in Appendix A.

[Contact: (303) 497-3743]

Microwave Metrology

Wilson, P. F., and Chang, D.C., Mode

Coupling by a Longitudinal Slot for a Class of Planar Waveguiding Structures:

Part I - Theory, also Part II - Applications, IEEE Transactions on Micrcwave Theory and Techniques, Vol.

MTT-33, No. 10, pp. 981-993 (October

1985) .

Coupling between two parallel-plate

waveguides is investigated. Mutual

excitation is due to a longitudinal slot

in a common plate. The introduction of

reflecting boundaries parallel to the

slot allows one to model a number of

planar waveguiding structures featuring

a common coupling mechanism. Part I of

this paper details the analysis of the

basic slot scattering problem based on

the singular integral equation method.

If one assunes that the slot is small,

then closed-form algebraic modal equations follow. These modal equations are well adapted to numerical parametric

studies.
CEEE Technical Publication Announcements - July 86 Page 1

Microwave Metrology , cont'd.

Part II of this paper presents specific

examples of the above approach along

with numerical results. Examples include a rectangular coaxial transnission

line, broadwall-coupled rectangular

waveguides, coupled microstrips, and

coupled microstrip and rectangular waveguide.

[Contact: (303) 497-3842]

Laser Metrology

Johnson, E.G. , Direct Measurement of

the Spatial Modes of a Laser Pulse —

Theory, NBS Tech. Note 1084 (August

1 985) .

We consider realizing an electric-field

measuring apparatus to measure the

temporal and spatial modes of a laser

pulse by using optical processing,

tapered optical fibers, and a pair of

detectors at the end of each optical

fiber. Using an appropriate

computer-generated hologram (CGH) , we show it is possible to discriminate

among a set of orthonormal modes used to

represent the spatial features of the

electric field with a signal- to-noise

ratio of at least 100 to 1. Ihe tapered

fiber is a mode filter that is used in

the transform plane of the CGH. Ihis

fiber allows the precise determination

of the strength of each of the

orthonormal modes being used as the

spatial basis of the electric field

before the optical processing.

[Contact: (303) 497-3234]

Rasmussen, A.L. , and Sanders, A. A.,

Documentation of the NBS APD and PIN

Calibration Systems for Measuring Peak

Power and Energy of Low-Level 1 . 064 pm

Laser Pulses, NBSIR 85-3032 (December

1 985) .

National Bureau of Standards APD (Avalanche) and PIN silicon photodiode

transfer standards are documented for a calibration service to measure 1.064-pm

laser pulses from ~10“ 8 to ~10-4 W peak

power and ~10- 16 to -10- 11 j energy. A

modulated continuous-wave measurement

system generating known low-level pulse

is described. Calibration support

equipnent, systematic and random errors,

and computer programs and calibration

data are also described.

[Contact: (303) 497-5367 or -3616]

Other Fast Signal Topics

Bensema, W.D. , Personal RM Transceivers, NIJ Standard 0209.01, National Institute of Justice, Technology

Assessment Program, September 1 985.

This document is an equipnent standard

developed by the Law Enforcement Standards Laboratory of the National Bureau

of Standards and is produced as part of

the Technology Assessment Program of the

National Institute of Justice. Ihe

standard specifies performance and other

requirements equipnent should meet to

satisfy the needs of criminal justice

agencies for high-quality service.

Performance requirements and methods of

test are presented for nontrunked frequency modulated (FM) personal transceivers and their associated antennas

and power sources. Ihe standard applies

to transceivers which either do not have

special subsystems such as selective

signaling or voice privacy, or in which

such subsystems are bypassed or disabled

during testing for compliance with the

standard.

[Contact: (303) 497-3465]

Daywitt, W.C., Complex Permittivity of

Beryllium Oxide Between 100 and 300 K

at 9.3 GHz, IEEE Transactions on

Instrumentation and Measurement, Vol.

IM- 34, No. (1), pp. 98-99 (1 985).

9.3 GHz measurement results of the

relative permittivity and loss tangent

of beryllium oxide at 99, 1 45, 223, and

3 00 K are reported.

[Contact: (303) 497-3720]

Hill, D.A., Radio Propagation in a Coal Seam and the Inverse Problem,

Proceedings of the 1985 International

Symposium on Antennas and EM Iheory,
Page 1

CEEE Technical Publication Announcements - July 86

Other Fast Signal Topics / cont' d.

Beijing, China, August 26-28, 1985, pp.

422-427.

The longwall method of coal mining in

underground coal seams is very efficient

in uniform seams, but coal seam anomalies can make the method unprofitable

and unsafe. This paper describes the

theoretical basis for detection of coal

seam anomalies using medium frequency

radio transmission over paths on the

order of 200 meters in length. The key

to the method is the sensitivity of the

attenuation rate of the coal seam mode

of propagation to changes in the coal

seam parameters, such as height or electrical conductivity. From a large

number of transmission paths, the principles of tomography can be used to

reconstruct an image of the seam.

[Contact: (303) 497-3472]

Young, M., The Scratch Standard Is

Only a Cosmetic Standard, Laser

Focus/ Electro-Optics , pp. 138-140

(November 1985). [An identical paper

appeared in the Proceedings of the

Conference on Laser Induced Damage in

Optical Materials, Boulder, Colorado,

October 28-30, 1985.]

A history of the scratch and dig

standard is presented, describing its

appliction and pointing out that it may

not be used for quantitative assessments

such as width measurement.

[Contact: (303) 497-3223 or -5342]

ELECTRICAL SYSTEMS

Power Systems Metrology

Oldham, N.M., Power Calibration Standard Based on Digitally Synthesized

Sinewaves, IEEE Transactions on Power

Apparatus Systems, Vol. PAS- 104, No.

11, pp. 3117-3121 (November 1 985).

The unit of electric power at 60 Hz is

often derived using impedance bridge

techniques in which the alternating

voltage is referred to the direct voltage standard through a thermal converter. An alternative calibration technique is described in which the ac-to-dc

transfer is made through digital- toanalog converters (DACs) in the form of

a dual-channel digital sinewave generator. Ihe power is calculated from mea- surements of voltage, current, and phase

angle, all of which rely on the accuracy

of the digital generator and ultimately

on the accuracy of the DACs. Measurement uncertainties of less than 1 00 ppm

have been achieved.

[Contact: (301) 921-2727]

Oldham, N.M., and Petersons, 0., Calibration of Standard Wattmeters Using a Capacitance Bridge and a Digital Generator, IEEE Transactions on Instrumentation and Measurement, Vol. IM-34,

No. 4, pp. 521-524 (December 1985).

A method for calibrating high-accuracy

wattmeters is described. The technique

is a modification of a previously described approach that utilizes a power

bridge based on a current comparator.

In such a bridge, the test current of

the wattmeter is balanced with a known

current that is proportional to the test

voltage. The measurement circuit described employs a high-voltage capacitance bridge in place of a special cur- rent comparator that was used in the

previous system. High sensitivity and

large ratios of the capacitance bridge

enable using high impedances, such as stable gas-dielectric capacitors and

resistors having lew-power dissipation

for the generation of reference cur- rents. The voltage on the standard

impedances is adjusted with inductive

dividers to obtain any power factor

between zero and one, lead and lag. A digitially synthesized dual-channel

signal source serves as a stable source

of voltage and current, and thus of

"phantom" power.

[Contact: (301) 921-2727]

Superconduc tors

Moreland, J. , and Qcin, J.W., Electron

Tunneling Experiments Using Nh-Sn
CEEE Technical Publication Announcements - July 86 Page 1

Superconductors , cont'd.

"Break" Junctions, Journal of Applied

Physics, Vol. 58, No. 10, pp. 3888-3895

(15 November 1985).

An Nb-Sn filament mounted on a flexible

glass beam can be broken to form an electron tunneling junction between the

fracture elements. Breaking the filament in liquid helium prevents oxidation

of the freshly exposed fracture sur- faces. A sharp superconducting energy

gap in the I-V characteristics measured

at 4 K indicates the formation of a high-quality tunneling barrier between

the fracture elements. The resistance

of the junction between the fracture

elements can be continuously adjusted by

varying the surface-bending strain of

the beam. An estimated 0.1 -nm change in

the barrier thickness produces about an order of magnitude change in the resistance over the range from 1

5 to 10 8

ft. The exponential character of this dependence shows that the tunnel junction is

freely adjustable without intimate con- tact of the junction elements. "Break"

junctions made in this way offer a new

class of tunneling experiments on freshly exposed surfaces of a fractured sam- ple without the oxide barrier previously

required for junction stability. Such

experiments provide a simple technique

for tunneling to new materials and may

eliminate complications that can be

encountered during interpretation of

data obtained using oxide barriers.

[Contact: (303) 497-3641]

Moreland, J. , and Ekin, J.W., Electron

Tunneling into Superconducting Filaments Using Mechanically Adjustable

Barriers, Applied Physics Letters,

Vol. 47, No. 2, pp. 175-1 77 (1 5 July

1 985) .

A new type of squeezable electron tunneling (SET) junction has been developed

for tunneling into superconducting filaments. Stable, mechanically adjustable

tunneling barriers between the native

surfaces of sputtered Nb films and 30-ym

diameter Nb filaments were established

in liquid heliim at 4 K. The currentversus-voltage characteristics of these

SET junctions were used to determine the

superconducting energy gap at the sur- face of the filaments. Since the filameters were etched from commercial su- perconducting magnet wire, this type of

tunnel junction shows promise as a diagnostic probe of superconducting materials for high-field magnets.

[Contact: (303) 497-3641]

ELECTROMAGNETIC INTERFERENCE

Crawford, M.L. , and Koepke, G.H., Comparing EM Susceptibility Measurement

Results Between Reverberation and Anechoic Chambers, Proceedings of the

1 985 IEEE International Symposium on Electromagnetic Compatibility, Wakefield, Massachusetts, August 20-22,

1985, pp. 1 52-1 60.

This paper compares measurement results

obtained using a (2.7 x 3.1 x 4.6)-m

reverberation chamber and a (4.9 x 6.7 x 8.5)-m anechoic chamber to determine the

electromagnetic susceptibility of equipment under test (EOT). The frequency

range is 200 MHZ to 18 GHz. The "correlation factor" between the two techniques appears to be directly proportional to the gain of the EUT. Pour

sample EUTh included in this study were

a 1 -cm dipole probe, a ridged horn antenna, a small rectangular TEM transmission cell with an aperture, and a modified 7.0 cm (2.75") diameter folded-fin

aircraft rocket.

[Contact: (303) 497-5497]

Cruz, J.E., Driver, L.D., and Kanda, M.,

Design of the National Bureau of

Standards Isotropic Magnetic Field

Meter (MFM-10) 300 kHz to 100 MHz,

NBS Tech. Note 1085 (October 1985).

A broadband magnetic field meter has

been developed at the National Bureau of

Standards (NBS) for the frequency range

of 300 kHz to 100 MHz. The isotropic

antenna unit consists of three mutually

orthogonal loops, each 10 cm in diameter. The magnetic field probe described
Page 20 CEEE Technical Publication Announcements - July 86

Electromagnetic Interference , cont" d.

in this paper has a measurement range of

0.1 to 30 A/m. The readout of the meter

is in terms of the Hermitian or "total"

magnitude of the magnetic field strength

which is equal to the root-sum-square

value of the three orthogonal magnetic

field components at the measurement

point. This magnetic field meter is

nearly isotropic over its dynamic

range.

The electronic circuitry of the meter

obtains the total magnitude of all field

polarizations for all cw signals in the

entire frequency band. The sensor is

isotropic and is well suited for measuring the near field of an emitter, including regions of multiple reflections

and standing waves. The meter can be

used to monitor either the plane wave fields in the far zone of a transmitter, or the complicated fields very close to

a radiofrequency leakage source. This

report describes the design, performance, and operating instructions for the

MFM-1 0.

[Contact: (303) 497-3763]

FitzGerrell, R.G. , Site Attenuation,

NBS Tech. Note 1 089 (November 1985) [a

shortened version of this paper appeared in the Proceedings of the IEEE

1 985 International Symposium on Electromagnetic Compatibility, Wakefield,

Massachusetts, August 20-22, 1985].

Site attenuation is a measure of performance of an open test site at frequencies below about 1 GHz. These sites

typically consist of a large, obstruction-free ground plane and the hemisphere above it. Calculations of site

attenuation are presented which provide

a reference for measurements made on a

3 0-m by 60-m wire-mesh ground screen. Measured data are compared to the calculated results.

[Contact: (303) 497-3737]

Hill, D.A., and Koepke, G.H., An Array

of Dipoles for Plane Wave Synthesis,

Proceedings of the 1985 International

Symposium on Antennas and Propagation,

Kyoto, Japan, August 20-22, 1985, pp.

1 77-1 80.

Phased arrays can be used to produce a nearly uniform plane wave in the near

field. This paper describes a small

array of dipoles which we have studied

theoretically and experimentally. The

element excitations are determined from

a near-field synthesis technique that

optimizes the field uniformity throughout the test volume.

[Contact: (303) 497-3472]

Jesch, R.L. , Measured Vehicular Antenna Performance, IEEE Transactions

on Vehicular Technology, Vol. VT-34,

No. 2, pp. 97-107 (May 1985).

Power gain radiation patterns of mobile

antennas mounted in six different locations on a test vehicle were measured

with and without typical lights and

sirens mounted on the roof. The mea- surements were performed at frequencies

representing the frequency bands of 25

to 50, 1 50 to 1 74, 400 to 512, and 806

to 866 MHz. In addition, special antennas consisting of three disguised antennas operating at discrete frequencies of

40.27, 1 62.475, and 416.975 MHz and one

slot antenna operating at 413 MHz were

also measured. Plots of power gain

radiation patterns are given for the

mobile antennas mounted in six different

locations on the test vehicle and for

the special antennas. Results showing

the effects of poor grounding characteristics are also included. Recommended

locations for mounting the mobile antennas are given for specific frequency

bands . [Contact: (303) 497-3496]

Kanda, M., A Methodology for Evaluating Microwave Anechoic Chamber Measurements, Proceedings of the 6th Symposium and Technical Exhibition on Electromagnetic Compatibility, Zurich,

Switzerland, March 5-7, 1985, pp.

69-74.

This paper discusses a methodology for
CEEE Technical Publication Announcements - July 86 Page 21

Electromagnetic Interference , cont'd.

evaluating anechoic chamber measurements. Anechoic chamber measurement is

evaluated in terms of the net power

delivered to a transmitting antenna, the

near-zone gains of open-ended rectangular waveguides and rectangular pyramidal

horns, and reflections from chamber

walls. The on-axis field intensity of

the standard transmitting horn in an anechoic chamber is calculated in terms

of the net power delivered to the transmitting antenna. The resulting data can

be used for estimating the overall un- certainty in the anechoic chamber measurements. Statistical control of the

measurement process by use of transfer

standard antennas will monitor the measurement uncertainties'.

[Contact: (303) 497-5320]

Randa, J. , and Kanda, M. , Directional

Scanning of Complex Electromagnetic

Environments, Proceedings of the 1985

International Symposium on Antennas and

Propagation, Kyoto, Japan, August

20-22, 1985, pp. 899-902.

As radiofrequency and microwave sources

(both intentional and inadvertent) multiply, the electromagnetic (EM) environment in which electronic devices (and

people) must function becomes increasingly complicated, while at the same

time its characterization becomes more

important. In order to completely characterize an EM environment without

knowledge of the radiating sources, the

sampling theorem requires that systematic measurements of the amplitude and

phase of the field be made throughout

the volume at spacings of no more than

one-half wavelength (of the highest

frequency present) . This is often

impossible and seldom convenient. There

is a need for practical techniques which

would determine useful properties of an EM environment from relatively few mea- surements. One recent suggestion for

such a technique is to use directional

measurements at a single point in con- junction with a plane-wave expansion of

the field. This paper reports the formulation of the technique and the

results of a simulation using it.

[Contact: (303) 497-3150]

Randa, J. , and Kanda, M., A Directional Scanning Technique for Characterization of Complex Electromagnetic Environments, Symposium Digest of the

IEEE/AP-S International Symposium 1985,

Antennas and Propagation, Vancouver,

B.C., June 17-21, 1985, pp. 521-524.

The problem of characterizing complicated electromagnetic (EM) environments

without actually measuring the field(s)

throughout the entire volume of interest

is of great practical importance in the

areas of EM interference, EM compatibility, EM hazard assessment, etc. The

question is how to obtain useful information about the volume of interest from

a reasonably small number of measurements.

A recent suggestion which appears to

hold considerable promise is to use a directional probe to measure at one point the field incident from different

directions and then to reconstruct or bound the field throughout the volume by

using these measurements in conjunction

with a plane-wave expansion of the

field. The formulation has now been

completed and simulations performed for

the (vector) electric field, and the

results are reported in this paper.

Simulation results are encouraging.

[Contact: (303) 497-3150]

Randa, J. , and Kanda, M., A FiniteElement Action Approach to the Characterization of Complex Electromagnetic

Environments, Proceedings of 1985

International Symposium on Antennas and

EM Theory, Beijing, China, August

26-28, 1985, pp. 48-53.

An approach is outlined to the characterization of complicated electromagnetic environments based on a finiteelement approximation to the action

functional of the electromagnetic field.

A stationary point of the action is

found by a numerical search, subject to
Page 22 CEEE Technical Publication Announcements - July 86

Electromagnetic Interference , cont'd.

constraints imposed by boundary conditions and by measurements of the field

at some number of points. The technique

is illustrated by a simple example.

[Contact: (303) 497-3150]

Randa, J. , and Kanda, M., High-Frequency Errors of an Electric-Field

Meter in Complicated Environments,

Proceedings of the 1985 IEEE International Symposium on Electromagnetic

Compatibility, Wakefield, Massachusetts, August 20-22, 1985, pp. 618-

621 [related paper, "Multiple-Source,

Multiple-Frequency Error of an Electric

Field Meter," appeared in IEEE Transactions on Antennas and Propagation,

Vol. AP-33, No. 1, pp. 2-9 (January

1 985) ] .

The results of a study of electricfield-meter ( EFM) errors in complex

electromagnetic environments are

reported. Two types of errors are con- sidered •— errors in the measured electric field for a common EFM design, and

errors in the assumption of equal electric and magnetic energy densities in a multiple-plane-wave environment. Typical errors in both cases are approximately one-half to three dB, but in some circumstances, they can exceed ten dB

[Contact: (303) 497-3150]

Wilson, P. F., and Ma, M.T., Factors

Influencing Material Shielding Effectiveness Measurements, Proceedings of

the IEEE 1985 International Symposiun

on Electromagnetic Compatibility, Wakefield, Massachusetts, August 20-22,

1985, pp. 29-31 [related paper,

"Shielding Effectiveness: Measurement

Techniques and Interpretations," to

be presented at 1986 Regional EMC

Conference, Anaheim, California, February 6, 1986, and to be published in

that conference's proceedings].

A material' s shielding effectiveness is

often measured in terms of insertion

loss, the field reduction between a transnitter and receiver achieved by

introducing the shield material. The

insertion loss concept is simply stated;

hcwever, ambiguities arise when one attempts to interpret specific insertion

loss measurements. Insertion loss data

depend not only on the shield material

tested, but also on the measurement

procedure. The antenna types used and

their positioning, the incident waveform

and its wave impedance, and the contact

resistance between the test material and

its mount (if any) can all affect insertion loss measurements, sometimes

dramatically. These concepts are discussed based on the simple model of

coupling through an electrically small

aperture, loaded and unloaded, with the

shield material. Emphasis is on the

importance of understanding and recognizing these factors when obtaining or interpreting shielding effectiveness

results.

[Contact: (303) 497-3842]

1986 CEEE Calendar

September 9-10 (Boulder, CO)

Syapositn on Optical Fiber Measurements.

This fourth biennial Symposiun is devoted to measurements on optical fiber,

related components, and systems. It is

sponsored by NBS in cooperation with the

IEEE Optical Communications Oommittee

and the Optical Society of America and

is intended to provide a forum for re- porting the results of recent measure- ments research and for evaluating these

results in terms of future directions.

About one-quarter of the sessions will

be workshops led by invited panelists.

Summaries of presented papers will be

published in a technical digest to be

distributed at the Symposiun.

[Contact: Susie A. Rivera, (303) 497-

5342]

RECENTLY ISSUED

STANDARD REFERENCE MATERIALS

The first practical superconducting

standard reference material (SRM) has

been released by the Electromagnetic

Technology Division to the NBS Office of
CEEE Technical Publication Announcements - July 86 Page 23

Recently issued SRMs , cont'd.

Standard Reference Materials for sale to

the public. The certified parameter of

SRM 1457, Superconducting Critical Current — NbTi Wire, is critical current

at magnetic fields of 2, 4, 6, and 8

tesla at a temperature of 4.2 K and an

electric field criterion of 0.2 yV/cm.

Information is given to permit the user

to determine critical current for temperatures in the range 3.90 to 4.24 K

and electric field criteria from 0.05 to

0.2 yV/cm.

SRM 1457 consists of a 2.2-m length of a mul tif ilimentary , niobium- titanium,

copper- stabilized wire, wound in a single layer on a spool having a core diameter of 8.7 cm. The wire is evaluated

for 34 parameters relating to current,

voltage, magnetic field, temperature,

strain, and physical specimen characteristics.

In conjunction with ASTM Standard Test

Method B7 14-82, D-C Critical Current of

Composite Superconductors, the new SRM

is intended to provide means for calibrating apparatus used to measure key

parameters of superconductor products

and thus should be useful to buyers and

sellers of superconductors, users of

superconducting equipment, and re- searchers in superconducting technology.
Page 24 CEEE Technical Publication Announcements - July 86

CEEE SPONSORS

National Bureau of Standards

Department of Defense

Defense Advanced Research Project

Agency; Combined Army/Navy/Air Force

Calibration Coordination Group;

Defense Nuclear Agency

U.S . Air Force

Bolling Air Force Base; Hanscom Air

Force Base; Newark Air Force

Station; Rome Air Development

Center; Space Division;

Wright-Patterson Air Force Base

U.S. Army

Aberdeen Proving Ground; Aviation

Research and Development Command;

Fort Monmouth; Harry Diamond

Laboratories; Fort Belvoir;

Redstone Arsenal

U.S. Navy

Aviation Logistics Center (Patuxent

River); Naval Air Systems Command;

Naval Surface Weapons Center; Naval

Weapons Support Center ( Crane )

Office of Naval Research

Department of Energy.

Energy Systems Research; Fusion

Energy

Department of Justice

Law Enforcement Assistance

Administration

Charles Stark Draper Laboratory

Food and Drug Administration

Hughes Aircraft Company

International Copper Research

Association

International Telecommunications

Satellite Organization

Sandia National Laboratories

University of California Los Alamos

Scientific Laboratory
NBS-1 14A (REV. 2-80

U.S. DEPT. OF COMM. 1. PUBLICATION OR

REPORT NO.

2. Performing Organ. Report No. 3. Publication Date BIBLIOGRAPHIC DATA

SHEET (See instructions) NBSIR-86/34 24 July 1986

4.

TITLE AND SUBTITLE

Center for Electronics and Electrical Engineering Technical Publication Announcements

Covering Center Programs, October-Dec ember 1985 with 1986 CEEE Events Calendar

5.

AUTHOR(S)

E. Jane Walters, compiler

6.

PERFORMING ORGANIZATION (If joint or other than NBS, see in struction s)

national bureau of standards

DEPARTMENT OF COMMERCE

WASHINGTON, D.C. 20234

7. Contract/Grant No.

8. Type of Report & Period Covered

9.

SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City. State. ZIP)

U.S. Department of Commerce

National Bureau of Standards

National Engineering LaboratoryCenter for Electronics and Electrical Engineering

10.

SUPPLEMENTARY NOTES

All technical information included in this document has been previously approved for

publication.

| Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11.

ABSTRACT (A 200-word or less factual summary of most significant information . If document includes a si gn i fi cant

bi bliography or literature survey, mention it here

)

This is the seventh issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. This issue of the Center for Electronics and Electrical

Engineering Technical Publication Announcements covers the fourth quarter of

calendar year 1985, Abstracts are provided by technical area for papers published

this quarter.

12.

KEY WORDS (S/x to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolons)

antennas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers;

ductors; superconductors

semicon13.

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KEY CONTACTS: Canter Headquarters (720) Director Mr. Judeon C. French (301) 921-3387

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Eiectrosystems Division (722) Chief, Dr. Oekare Petersons (301) 921-2328

Electromagnetic Fields Division (723) Chief, Mr. Charles K.S. Miller (303) 497-3131

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