AlllOb Q33TbE

Keterence

IBS

Publications

NBSIR 84-2857-1

Center m Electronics and

Electrical Encineerinc

Techkicrl Progress Bulletxm

U S. DEPARTMENT OF COMMERCE

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

Gaithersburg, Maryland 20899

Covering Center Programs, January - March 1983

March 1984

Issued June 1 984

C

Q

QC100

1156

J.S. DEPARTMENT OF COMMERCE

NATIONAL BUREAU OF STANDARDS

V

84 - 2357-1

1934
INTRODUCTION TO MARCH 1984 ISSUE OF THE CEEE TECHNICAL PROGRESS BULLETIN

This is the second issue of a quarterly abstract journal covering the work of the

National Bureau of Standards Center for Electronics and Electrical Engineering. This

issue of the CEEE Technical Progress Bulletin covers the first quarter of calendar

year 1983.

ORGANIZATION : Abstracts and citations are arranged by technical topic as identified

in the table of contents and alphabetically by first author under each subheading

within each topic. Each abstract ends with a telephone number of the individual to

contact for more information on the topic; unless otherwise noted, this individual is

the first author. Each citation ends with identification of the issue of the

Technical Progress Bulletin in which the associated abstract appeared. This issue

also includes a calendar of Center conferences and workshops for the remainder of

calendar year 1984, an announcement of newly released standard reference materials,

and a list of sponsors of the work. SPECIAL NOTE : Because the four issues covering

calendar year 1983 are later than intended, the contents of these issues will differ

from the original plan of providing abstracts for all papers approved by NBS in a quarter as follows: Each issue will contain (1) abstracts of papers approved for

publication by NBS for the appropriate quarter and not subsequently published until

calendar year 1984, (2) abstracts of papers approved and published during the

quarter, and (3) citations for papers published during the quarter, but for which

abstracts have appeared in an earlier issue of the Technical Progress Bulletin . Items in category (1) appear under the subheading "Approved for Publication"; items

in categories (2) and (3) appear under the subheading "Recently Published."

Center for Electronics and Electrical Engineering : Center programs provide national

reference standards , measurement methods , supporting theory and data and

traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U. S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor

Technology Program, carried out by the Semiconductor Materials and Processes and

Semiconductor Devices and Circuits Divisions in Gaithersburg, MD, and the Signals and

Systems Metrology Program, carried out by the Electrosystems Division in Gaithersburg

and the Electromagnetic Fields and Electromagnetic Technology Divisions in Boulder,

CO. Key contacts in the Center are given on the back cover; readers are encouraged

to contact any of these individuals for further information.

Previous special issues : Two special issues of the Technical Progress Bulletin have

been published with abstracts for the Signals and Systems Program only, NBSIR 83-

2719-1, covering October 1981 through March 1982 and NBSIR 83-2719-2, covering April

1982 through September 1982. NBSIR 82-2636, a special issue of the Semiconductor

Technology Program Progress Briefs published in January 1983, listed abstracts of

publications from that Program For Federal fiscal year 1982 (October 1981 through

September 1982, fifty-third through fifty-seventh quarters of the Program). The new CEEE Technical Progress Bulletin replaces the Progress Briefs series [single copies

of 82-2636 are available from the Center, see back cover for address].

Center sponsors : The Center Programs are sponsored by the National Bureau of

Standards and a number of other organizations, in both the Federal and private

sectors; these are identified on page 12.
HgnCNiiL BUREAU OF STANDARDS

LiFRAEY

CEEE Technical Progress Bulletin - March 84 Page 1

TABLE OF CONTENTS

INTRODUCTION inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM

Gallium Arsenide Materials

Dimensional Metrology 2 Process A Device Modeling 2 Other Semiconductor Metrology 3

SIGNALS AND SYSTEMS METROLOGY PROGRAM

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 4

Waveform Metrology 4

Cryoelectronic Metrology 5 Antenna Metrology . 5 Noise Metrology 5 Microwave & Millimeter-Wave Metrology 6

Optical Fiber Metrology 6

Other Fast Signal Topics 6

ELECTRICAL SYSTEMS 7 Power Systems Metrology 7 Superconductors 8

ELECTROMAGNETIC INTERFERENCE 9

CEEE CALENDAR 10

NEW STANDARD REFERENCE MATERIALS 12

SPONSOR LIST 12

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 2 CEEE Technical Progress Bulletin - March 84

SEMICONDUCTOR TECHNOLOGY PROGRAM

Gallium Arsenide Materials

Recently Published

Pande, K.P. and Seabaugh, A.C., Preparation of Device Quality GaAs Using

Plasma-Enhanced MO-CVD Technique,

Proc. Symposium III-V Optoelectronics

Epitaxy and Device Related Processes,

Proc. Vol. 83-13, V.G. Keramidas and

S. Mahajan, Eds., pp. 201-209, Electrochemical Society, Pennington, NJ

( 1983).

Low temperature (<450°C) deposition of

single crystal GaAs using a new plasmaenhanced MO-CVD technique is described.

In this technique, plasma is created by

a dc potential and the substrate is not

directly exposed to the plasma. Deposition of GaAs was achieved at extremely

low plasma power (<5 W) using trimethyl

gallium (TMGa) and arsine (or trimethylarsenic) reactants. The resulting epitaxial films show excellent surface

morphology and thickness uniformity over

a large area substrate. A linear dependence of growth rate upon TMGa concen- tration was observed with a typical

growth rate of 0.1 ym per minute for a TMGa flow rate of 15 cm3 per minute.

Undoped films were found to be n-type

with a room temperature carrier mobility

in the range of 5200 cmz V“ 1 *S“ 1

. Measurements on Schottky barrier devices

fabricated on n/n + layers show uniform

impurity doping profile and 55-V reverse breakdown voltage. Temperature dependence of the capacitance indicates a density of deep trapping centers as low

as 6.2 x 10 13 cm-3

. Data on photoresponse of these devices are also presented. [Contact: Seabaugh,

(301) 921-36251

Dimensional Metrology

Recently Published

Nyyssonen, D. , Laser Micrometrology

for Integrated Circuits, Proc. First

International Congress Applications of

Lasers and Electro-Optics, September

20-23, 1982, Boston, MA (1983)

The optical microscope measurement of

micrometer and submicrometer linewidths

during integrated-circuit fabrication

utilizes a wide variety of optical microscope system designs including

bright-field, dark-field, and focused

laser beam scanning systems. Previous

papers have dealt with the problem of

accurate edge detection on lines as small as 0.5 ym using partially coherent

or effectively coherent imaging. The

present paper deals with the "principle

of equivalence" in optical system design

of both conventional microscope imaging

systems and focused-spot scanning systems. It is shown both theoretically

and experimentally that, for the case of

measurement of lines patterned in thin

films like those found on integratedcircuit wafers, the principle of equivalence does not hold because of the angular dependence of the optical parameters

that characterize the line object. It is concluded that accurate linewidth

measurements require both the angle of

incidence and the wavelength to be well

defined in a manner analogous to the

requirements for accurate el 1 ipsometric

measurement of film thickness.

[(301) 921-3786]

Process & Device Modeling

Approved for Publication

Albers, J. and Berkowitz, H.L., The

Relation Between Two-Probe and FourProbe Resistances on Nonuniform Structures, submitted to J. Electrochemical Society [Extended abstract

published in Extended Abstracts of the

Electrochemical Society, 83-1, pp.

622-623 (1983)].

A general relation between the two-probe

resistance (spreading resistance) and

the four-probe resistance on nonuniform

structures is derived. In addition, an expression is derived for the derivative

of the spreading resistance with respect

to the logarithm of the probe spacing.
CEEE Technical Progress Bulletin - March 84 Page 3

Process & Device Modeling , cont'd.

and discussed for the evaluation of

these equations for nonuniform structures. The relation between the fourprobe resistance, Z(x,S), and the incremental sheet resistance, R(x), is shown

to arise in the limit as the probe spacing becomes large compared to the distance to an insulating boundary. Specific examples are drawn from calculations on implant-type structures into

substrates having insulating boundaries

near the end of the implanted region

(junction isolation) as well as those

where the insulating boundary is far

from the implanted region (emulating the

back surface of a same conductivity type

substrate). Also presented is a method

for the self-consistent calibration of

spreading resistance profiles utilizing

Z ( x , S ) . [(301) 921 -3621]

Bennett, H. S., Improved Device

Physics for Calculating the Gain of

Bipolar Structures in Silicon, to be

published in Proc. Workshop on Submi- cron Physics.

A model which is more physically correct

than the extension of the empirical

procedures of Slotboom and de Graaff for

donor densities above 2.5 x 10 19 cm" 3 has been developed for the effective

intrinsic carrier concentration n-j e in n-type silicon. This new approach,

which is based upon quantum mechanics

and optical measurements for the bandgap, has been applied to an npn transistor with a 1-ym emitter-base junction

depth and with donor densities greater

than 1020 cm-3

. Conventional device

physics with even unrealistic carrier

lifetimes does not predict the measured

dc common emitter gain. The approach

described here with carrier lifetimes

comparable to those expected in processed silicon (~0.1 us) does predict

the gain correctly. [(301) 921-3541]

Recently Published

Lowney, J.R. and Bennett, H.S., Effect of Ionized Donors on the Electron

and Hole Densities of States in Silicon, J. Applied Physics 54, pp. 1369-

1374 (March 1983).

‘

A self-consistent second Born approximation has been used to calculate the

change in the electron and hole densities of states due to ionized donors in

silicon. The results are compared with

a previous partial-wave technique and

found to be in good agreement for a case

of common applicability, i.e., a donor

density of 1020 cm" 3 at room temperature. [(301 ) 921-3786]

Other Semiconductor Metrology

Recently Published

French, J.C., Galloway, K.F., and

Scace R.I. The Challenge of Semiconductor Metrology, Proc. 1983

Measurement Sciences Conf., Palo Alto,

CA, January 19-20, 1983, pp. 171-188.

Semiconductor technology has placed

challenging demands on the metrologist

to provide state-of-the-art capabilities

for measurements of dimensional,

electrical, thermal, and other physical

properties of semiconductor materials,

devices, and circuits in a form suitable

for meeting the practical needs of

sci ence and of i ndu st ry and i t s customers. The National Bureau of

Standards is responding to these demands

by providing generic new measurement

methods, physical standards, and

services, highlighted by examples given

in this paper.

[(301) 921-3357]

Walters, E.J., Semiconductor Technology Program Progress Briefs, NBSIR

82-2636 (January 1983)

.

This report provides abstracts of recent

publications of NBS work on measurement

technology for semiconductor materials,

process control, and devices. Emphasis

is placed on silicon and silicon-based

devices. Topics include: defects and

impurities, IC test structures, micrometrology, packaging, physical analysis,
Page 4 CEEE Technical Progress Bulletin - March 84

Other Semiconductor Metrology , cont'd.

power devices, process and device modeling, and radiation effects. In addition, publications in press and confer- ence presentations are listed. Information is also given on recent seminars,

workshops, and symposia and those scheduled for the near future.

[(301) 921-3786]

FAST SIGNAL ACQUISITION, PROCESSING,

AND TRANSMISSION

Waveform Metrology

Recently Published

Andrews, J., Bell, B., Nahman, N.S., and

Baldwin, E.E., Reference Waveform

Flat Pulse Generator, IEEE Trans.

Instrumentation and Measurement, IM-32,

No. 1, pp. 27-32 (March 1983) [summary

published in Proc. Conf. Precision

Electromagnetic Measurements, June 28 - July 1, 1982, Boulder, CO, pp. B10-

B12]

.

The NBS Reference Flat Pulse Generator

is used to transfer dc voltage and

resistance standards to the nanosecond

domain. It provides a step amplitude of

1 .000 V (open circuit) from a source impedance of 50.0 ohms. The transition

duration is 600 ps and all perturbations

are damped out to less than ±10 mV within 5 ns. It can also be used as a time

interval transfer standard.

[(303) 497-3529]

Gans, W.L., The Measurement and Deconvolution of Time Jitter in EquivalentTime Waveform Samplers, IEEE Trans.

Instrumentation and Measurement, IM-32,

No. 1, pp. 126-133 (March 1983) [summary published in Proc. Conf. on Precision Electromagnetic Measurements,

June 28 - July 1, 1982, Boulder, CO,

p . G6]

.

The presence of time jitter between the

trigger signal and the sampling strobe

in an equivalent-time sampling oscilloscope can cause appreciable distortion

of the recorded waveform. Under additive signal averaging conditions, a method has been developed to reduce this

distortion. The method consists essen- tially of deconvolving a jitter-related

effective impulse response from the

recorded waveform data.

[(303) 497-3538 or -3806]

Lentner, K.J. and Flach, D.R., An

Automatic System for AC/DC Calibration, IEEE Trans. Instrumentation

and Measurement, IM-32, pp. 51-56

(March 1983) [abstract appeared on page

2 of May 1983 TPB ( NBSIR 83-2719-2)].

Nahman, N. S., Picosecond Domain

Waveform Measurements; Status and

Future Directions, IEEE Trans.

Instrumentation and Measurement, IM-32,

No.l, pp. 117-124 (March 1983) [paper

given at 1982 Conf. Precision Electromagnetic Measurements, Boulder, CO],

A review of the state-of-the-art of

picosecond time-domain waveform measurements which includes measurements in

both the electrical and optical regions

of the electromagnetic spectrum. The

review is the latest edition of a series

of reviews on high-speed pulse measurements compiled by the author commencing

in 1967; specifically, the present

review up-dates the 1978 review. The

significance to pulse waveform measure- ments of the IEEE Pulse Standards 194

and 181 or the identical IEC Pulse

Standards 469-1 and 2 are discussed

briefly. A classification of timedomain measurement methods is described

which includes the various real-time and

equivalent-time techniques used in

electrical and optical transient

(pulses, etc.) measurements. The

present day capabilities are summarized

in an up-dated version of the state-ofthe-art charts published in 1978. Also,

presented are some opinions as to the

future directions of electrical and

optical picosecond domain measurements.

Approximately 30 references are cited.

[(303) 497-5167 or -3806]
CEEE Technical Progress Bulletin - March 84 Page 5

Waveform Metrology , cont'd.

Oldham, N.M., A 50 PPM AC Reference

Standard Which Spans 1 Hz to 50 kHz,

IEEE Trans. Instrumentation and Measurement, IM-32, pp. 176-179 (March

1983) [abstract appeared on page 3 of

May 1983 TPB ( NBSIR 83-2719-2)].

Schoenwetter , H.K., High Accuracy

Settling Time Measurements, IEEE

Trans. Instrumentation and Measurement,

IM-32, pp. 22-27 (March 1983) [abstract

appeared on page 3 of May 1983 TPB

(NBSIR 83-2719-2)].

Souders, T.M., Flach, D.R., and

Wong, T.C., An Automated Test Set for

the Dynamic Characterization of A/D

Converters, IEEE Trans. Instrumentation and Measurement, IM-32, pp.

180-186 (March 1983) [abstract appeared

on page 3 of May 1983 TPB (NBSIR

83-2719-2)].

Cryoelectronic Metrology

Recently Published

Peterson, R.L. and McDonald D.G.,

Voltage and Current Expressions for a Two-Junction Superconducting Interferometer, J. Appl. Phys. 54(2), pp.

992-996 (February 1983) [abstract

appeared on page 4 of May 1983 TPB

(NBSIR 83-2719-2)].

Antenna Metrology

Recently Published

Repjar, A.G., Newell, A.C., and Baird,

R.C., Antenna Gain Measurements by an Extended Version of the NBS Extrapolation Method, IEEE Trans. Instrumentation and Measurement, IM- 32, No. 1,

pp. 88-91 (March 1883) [also published

in Proc. Conference on Precision Electromagnetic Measurements, June 28 - July 1, 1982, Boulder, CO, pp. F7-F9;

abstract appeared on page 14 of July

1983 TPB (NBSIR 83-2719-3)].

Stubenrauch, C.F., Spiess, W., Galliano,

P.G., and Babij, T., International

Intercomparison of Electric Field

Strength at 100 MHz, IEEE Trans.

Instrumentation and Measurement, IM-32,

No. 1, pp. 235-237 (March 1983) [also

published in Proc. Conference on Precision Electromagnetic Measurements,

June 28 - July 1, 1982, Boulder, CO,

pp. P3-P4; abstract appeared on page 6

of May 1983 TPB (NBSIR 83-2719-2)].

Noise Metrology

Recently Published

Wait, D.F., Precision Measurement of

Antenna System Noise Using Radio Stars,

IEEE Trans. Instrumentation and

Measurement, IM-32, No. 1, pp. 110-116,

(March 1983) [summary published in

Proc. Conference on Precision Electromagnetic Measurements, June 28 - July 1, 1982, Boulder, CO, p. F- 1 7

;

abstract appeared on page 7 of May 1983

TPB (NBSIR 83-2719-2)].

Wait, D.F., Earth Terminal Measurement

System Operations Manual (Revised),

NBSIR 83-1679 (January 1983) [abstract

appeared on page 14 of July 1983 TPB

(NBSIR 83-2719-3)].

Wait, D.F. and Daywitt, W.C., Preliminary Examination of 20 GHz G/T

Measurements of Earth Terminals,

NBSIR 83-1686 (March 1983)

.

Three basic measurement techniques and

the associated measuring systems are examined to determine which are most

likely to meet the needs for measuring

the figure of merit (G/T) of future 20-

GHz satellite systems: use of the sun

as a known source, use of the sun as an intercomparison source with a calibrated

reference terminal, and the use of a satellite signal as an intercomparison

source. It is shown that the method of

using the sun as a known source is not

very accurate (about 1.5 dB uncer- tainty), but that using the sun as a transfer source is useful (0.3 to 0.5

dB , depending on the measuring syst*-*

for Earth terminals with antenna
Page 6

Noise Metrology , cont'd.

diameters less than 1.8 m (6 ft). For

Earth terminals with antenna diameters

greater than 1.8 m, the sun cannot be

used as a transfer source for geometric

reasons, but a satellite signal can be

used as such a source. [(303) 497-3610]

Microwave & Millimeter-Wave Metrology

Approved for Publication

Juroshek, J.R. and Hoer, C.A., A Dual

Six-Port Network Analyzer Using Diode

Detectors, submitted to IEEE Trans.

Microwave Theory and Techniques.

The performance of a dual six-port network analyzer using diode detectors is

described. The network analyzer operates over the 2-18 GHz band using com- mercially available, low-barrier,

Schottky diodes. The paper describes

the process for calibrating the diodes

for deviation from square-law. Measurement results are presented showing the

accuracy and precision of the six-port

network analyzer when measuring 1-port

and 2-port devices.

[(303) 497-5362 or -3196]

Recently Published

Hoer, C., Choosing Line Lengths for

Calibrating Network Analyzers,

IEEE Trans. Microwave Theory and

Techniques, 31, No. 2, pp. 76-78 (January 1983) [abstract appeared on page 7 of May 1983 TPB ( NBSIR 83-2719-2)].

Optical Fiber Metrology

Recently Published

Gallawa, R.L., Editor, Fiber Optics:

Short-Haul and Long-Haul Measurements

and Applications. Proc. set of four

sessions at SPIE conf., San Diego, CA,

August 24-25, 1982, as Proc. SPIE - The

International Society for Optical

Engineering, 355, SPIE, P.0. Box 20,

Bellingham, WA 98227.

CEEE Technical Progress Bulletin - March 84

This set of four sessions is intended to

concentrate on topics not often covered

in fiber conferences. In particular,

the organizers included papers on the

subjects of short-haul systems and

measurements. Attention is also given

to the more popular subjects of longhaul systems and applications.

Session 1 represents a potpourri; the

papers address some of the more pressing

topics of 1982. The work discussed in

these papers is generally at the

research level, in contrast to the more applications-oriented subjects of the

other three sessions.

The second session, on terminal devices,

concentrates on those devices that allow

full exploitation of the fiber

capability. Subjects range from the

rather general to the very specialized.

The third session is concerned with

test and measurement and includes papers

on component testing as well as system

evaluation.

The fourth session addresses a number of

short-haul fiber system problems, circa

1982. These problems tend to be unusual

and frequently difficult, arising in

application areas such as military

systems (military applications of fibers

are frequently over short distances).

[(303) 497-3761]

Other Fast Signal Topics

Approved for Publication

Young, M., Can You Describe Optical

Surface Quality with One or Two Numbers?, submitted to Proc. Soc. PhotoOptical Instrumentation Engineers.

This talk discusses two optical surface

quality standards, total integrated

scatter (TIS) and the scratch and dig

standard (MIL-0-13830A) . I begin by

using Fourier optics to show that the

well-known expression, It/I(0) = 4 k

2 o2

, which relates scattered power to

rms roughness a, is truly valid only for
CEEE Technical Progress Bulletin - March 84 Page 7

Other Fast Signal Topics , cont'd.

certain classes of surfaces. Vector

scattering theory applied to a more

general case shows that in fact optics

can measure only a bandwidth-limited

roughness that can be related to scattered power only if the surface statistics are known. For this reason, the

standard should perhaps be regarded as a scattered light standard and not as a surface roughness standard. I conclude

by describing our efforts to develop an objective measurement technique to aid

in the manufacture of the artifacts used

to implement the scratch standard.

[(303) 497-3223 or -5342]

Recently Published

Jesch, R.L. and McLaughlin, R.H.,

Dielectric Measurements of Oil Shale

as Functions of Temperature and Frequency, NBSIR 83-1683 (January 1983)

[also submitted to IEEE Trans.

Geoscience and Remote Sensing],

A high-temperature sample holder

designed by the National Bureau of Standards was used to determine the dielectric properties of approximately 40 oil

shale samples as functions of temperature and frequency. A description of

the sample holder characterization is

given along with the measurement procedure and the sample preparation. Experimental results are given for different

oil shale samples, varying in yield from

0.024 L/kg (6 gal/ton) to 0.338 L/kg (81

gal/ton), that were measured at room temperature (25°C) up to 500°C and within the frequency range of 5-1000 MHz.

[(303) 497-3496]

Young, M., Objective Measurements and

Characteristics of Scratch Standards,

Proc. SPIE conf., San Diego, CA, August

24-25, 1982, pp. 86-92 in Proc. SPIE - The International Society for Optical

Engineering, 356, SPIE, P.0. Box 20,

Bellingham, WA 98227 (1983) [abstract

appeared on page 9 of May 1983 TPB

(NBSIR 83-2719-2)].

Young, M., Questions Students Ask,

Physics Teacher, pp. 194-195 (March

1983) [abstract appeared on page 16 of

July 1983 TPB (NBSIR 83-2719-3)].

Zimmerman, J.E., Magnetic Quantities,

Units, Materials, and Measurements

and Crypogenics, chapters 2 and 3

in book. Biomagnetism: an Interdisciplinary Approach, Samuel J. Williamson,

et al., Eds., NATO Advanced Study

Institute Publication, Vol. 66, Plenum

Press, New York, NY (1983).

ELECTRICAL SYSTEMS

Power Systems Metrology

Approved for Publication

Hillhouse, D.L., Petersons, 0., and Sze,

W.C., A Simplified System for Calibration of Coupling Capacitor Voltage

Transformers (CCVTs), submitted to

IEEE Trans. Power Apparatus & Systems.

Metering accuracy coupling capacitor

voltage transformers (CCVTs) are installed permanently in 230-500 kV substations and must be calibrated in

place. Several years ago, the National

Bureau of Standards (NBS) developed a field calibration system, with uncer- tainties of ±0.1% and ±0.3 milliradian.

This paper describes a simpler system,

consisting of a 15 kV standard transformer and its power supply, a capacitive transfer standard divider, and a voltage comparator. In field tests,

this system agreed with the prototype to

within ±0.03% and ±0.1 milliradian. The new system can be transported in a non- dedicated truck, and operated from the

substation control house or a van. [(301) 921-3121]

Recently Published

Hebner, R. E., Kelley, E. F., and

Hagler, J.N., 1981 Annual Report —

Optical Measurements for Interfacial

Conduction and Breakdown, NP, SIP
Page 8 CEEE Technical Progress Bulletin - March 84

Power Systems Metrology , cont'd.

82-1628 (January 1983).

This report presents measurements and

calculations contributing to the understanding of space and surface charges in

practical insulation systems. Calculations are presented which indicate the

size of charge densities necessary to

appreciably modify the electric field

from what would be calculated from geometrical considerations alone. Experimental data is also presented which

locates the breakdown in an electrode

system with a paper sample bridging the

gap between the electrodes. It is found

that with careful handling, the breakdown does not necessarily occur along

the interface even if heavily contaminated oil is used.

The effects of space charge in the bulk

liquid are electro-optical ly examined in

nitrobenzene and transformer oil.

Several levels of contamination in

transformer oil are investigated.

Whereas much space charge can be

observed in nitrobenzene, very little

space charge, if any, can be observed in

the transformer oil samples even at

temperatures near 100°C.

[(301) 921-3121]

Hillhouse, D.L., Effects of High-Voltage Switching on the EPRI-NBS Coupling

Capacitor Voltage Transformer (CCVT)

Calibration System Standard Divider,

NBSIR 83-2666 (March 1983).

This report presents the results of

tests of the effects of high-voltage

switching on the EPRI-NBS CCVT calibration system's capacitive standard

divider, completing an investigation

stemming from the results of three calibrations at a Gulf States Utilities

substation.

Initial tests consisted of full-scale

(300 kV) switching operations at EPRI's

Waltz Mill test facility, during which

the divider exhibited significant ratio

offsets (average = +0.2%, maximum =

nearly + 0.5%). Tests were continued at

the National Bureau of Standards (NBS),

where it was determined that operation

of a grounding switch, installed to

protect the divider low side during

high-voltage switching, caused ratio

offset by trapping charge on the

divider's low side capacitor. This

resulted in residual dc voltage which

changed the value of the divider's lowside capacitance. The addition of a bleeder resistor eliminated the problem

in the laboratory. With the bleeder

resistor in place, the Waltz Mill tests

were repeated. Fifty high-voltage

switching operations indicated a negligible shot-to-shot variation (average = -lppm, a = 80 ppm).

No obvious correlation was found between

the ratio offsets described above and

the results of CCVT calibrations performed while the effect may have been

present in the divider. Experience

indicates that a significant proportion

of calibrated CCVTs is outside metering

tolerance. Long-term simultaneous monitoring of a sizeable number of CCVTs is

suggested.

[(301) 921-3121]

Superconductors

Recently Published

Clark, A.F. and Tachikawa, K. , editors,

Proc. International Cryogenic Materials

Conference, Kobe, Japan, May 11-14,

1982, Butterworths , Guildford, England

(January 1983).

This Conference, held jointly with the

International Cryogenic Engineering

Conference, presented 125 papers in 15

sessions. All varieties of materials

used at low temperatures, including

superconductors, structural steels,

nonferrous alloys, nonmetal lies and

composites, were covered, as was the

fabrication, welding, and joining of

these materials. [Contact: Clark,

(303) 497-3253]

Ekin, J.W., Four-Dimensional J-B-T-e
CEEE Technical Progress Bulletin - March 84 Page 9

Superconductors , cont'd.

Critical Surface for Superconductivity, J. Applied Physics 54 (1), pp.

303-306, January 1983.

The concept of a superconducting

critical surface in a four-dimensional

J-B-T-e space is introduced and from

this a critical strain parameter e c is

defined in analogy to the usual three

superconducting critical parameters:

J c , B Cz m, ancl Tc* Examples of a subset of this surface in a threedimensional J-B-e space are presented as

a function of temperature for the A15

superconductors, Nb^Sn and V

3 Ga, utilizing the recently discovered strain scaling law. The usefulness of the J-B-T-e

critical surface in characteri zi ng the

interaction of strain with the other

three critical parameters and in setting

strain limits for the mechanical design

of superconducting devices is illust rated.

[(303) 497-54481

Reed, R.P., Arvidson, J.M., Ekin, J.W.,

and Schoon, R.H., Magnetic Field

Effects on Tensile Behavior of Alloys

304 and 310 at 4K, pp. 33-36 in Proc.

International Cryogenic Materials

Conf., Kobe, Japan, May 11-14, 1982,

Butterworths , Guildford, England

(January 1983)

.

Experiments were conducted to assess the

effects of a steady, transverse 7-T

magnetic field on the austenite stressstrain characteristics of types 304 and

310 stainless steels at 4 K. Wire specimens of both a stable Fe-26Dr-20Ni

( AISI 310) and metastable FE-18Cr-9Ni

( A I S I 304) alloy were measured. No

change in austenite flow strength of

either alloy was observed from the

application of a 7-T field. There was

no detectable effect of a constant 7-T

magnetic field on the yield strength of

either alloy. Young's modulus at 4 K was found to decrease linearly with

applied strain, but no effect of magnetic field was observed.

[(303) 497-3870]

ELECTROMAGNETIC INTERFERENCE

Approved for Publication

Shafer, J.F., Field Strength In Vehicles Resulting From On-Board Communications Transmitters [to be published

as an NBS Special Publication in 19841.

The purpose of this report is to measure

and report the levels of field strength

that are generated by the various types

of transmitters in and around an operator in a law-enforcement vehicle

equipped with communications equipment.

No attempt has been made to assess what

levels of field strength may be detrimental to the operator's health or wellbeing. Typical values of field strength

at ten selected locations inside a vehicle with and without the driver's door

opened are given in the frequency bands

of 30 to 50 MHz, 150 to 174 MHz, 400 to

512 MHz, and 806 to 866 MHz. Levels of

output power are given for the data

presented along with observations about

the operator's physical size and this

relationship to the measured data.

Levels of field strength are also given

for a metallic prisoner shield, a personal transceiver, and a speed measuring

radar device as used in a vehicle.

[(303) 497-3724]

Recently Published

Crawford, M.L., Improving the Repeatability of EM Susceptibility Measurements of Electronic Components When

Using TEM Cells, SAE Technical Paper

Series 830607, International Congress

and Exposition, Detroit, MI, February

28 - March 4, 1983, pp. 1-8.

[Abstract appeared on page 20 of July

1983 TPB ( NBSIR 83-2719-3)1.

Crawford, M.L., Evaluation of Shielded

Enclosure for EMI/EMC Measurements

Without and With RF Anecholc Material, Proc. 1983 EMC Symposium and

Exhibition, Zurich, Swi tzer 1 and , Ma

8-10, 1983, pp. 397-402.
Page 10 CEEE Technical Progress Bulletin - March 84

Electromagnetic Interference , cont'd.

This paper gives the results of measure- ments performed by the National Bureau

of Standards to evaluate the potential

influence of rf absorbing material installed inside a shielded enclosure on the accuracy of TEMPEST measurements

made using the shielded enclosure. The

facility evaluated was a 3.76 m wide by

6.2 m long by 2.44 m high shielded en- closure located at Hanscom Air Force

Base, Massachusetts. The paper briefly

discusses the measurement technique

used, describes the test facility and

test configurations, and the spherical

dipole radiators used for generating the

reference standard fields. Tests were performed to evaluate the influence of

(1) placement location of both the source and receiving antenna inside the

enclosure, (2) separation distance between source and receiving antenna, and

(3) height of source above the floor of

the enclosure on the measurement re- sults. Measurements made before and

after installation of the rf absorbing

material indicated a significant improvement in accuracy (error typically

less than ±10 dB as compared to >30 dB)

at frequencies above 30 MHz where the

absorber is effective.

[(303) 497-54971

Crawford, M.L., Improving the

Repeatability of EM Susceptibility

Measurements of Electronic Components

When Using TEM Cells, SAE Technical

Paper Series 830607, International

Congress and Exposition, Detroit,

MI, pp. 1-8, February 28 - March 4,

1983 [abstract appeared on page 20 of

July 1983 TPB ( NBSIR 83-2719-3)].

Kanda, M., Ries, F.X., Driver, L.D., and

Orr, R. D., An Electric and Magnetic

Field Sensor Concept for Simultaneous

Near-Field Electromagnetic Field Measurements, Proc. 1983 EMC Symposium

and Exhibition, Zurich, Switzerland,

March 8-10, 1983, pp. 263-266

[abstract appeared on page 20 of July

1983 TPB (NBSIR 83-2719-3)].

Koepke, G.H. and Ma , M.T., A New

Method for Determining the Emission

Characteristics of an Unknown Interfer- ence Source, Proc. 1983 EMC Symposium

and Exhibition, Zurich, Switzerland,

March 8-10, 1983, pp. 35-40 [abstract

appeared on page 20 of July 1983 TPB

(NBSIR 83-2719-3)].

Miller, C.K.S., The EMI Measurement

Challenge, Proc. Measurement Science

Conference, Palo Alto, CA, January 20-

21, 1983, pp. 189-197.

With the increasing proliferation of

radiating sources to the electromagnetic

(EM) environment and the increased use

of semiconductor technology in consumer

and industrial products, incidents of

electromagnetic interference (EMI) to

electronic products have increased.

Current EMI measurement difficulties are reviewed and a description is given of

the National Bureau of Standards' (NBS)

measurement research, both planned and

in process.

[(303) 497-3131]

CEEE CALENDAR

1984

April 30 - May 4 (Boulder, CO)

NBS Noise Measurement Seminar. The

course is intended for practicing noise

metrologists and technical managers

responsible for systems for which

accurate noise measurements are

important. The seminar introduces and

describes reference noise sources, noise

measuring systems, and the problems of

characterizing and measuring noise in

passive components, amplifiers, and

satellite earth terminals. Class

examples will specifically address the

measurement of noise power; amplifier

noise; and antenna system noise,

including measures such as noise

equivalent flux, the ratio of system

gain to system noise temperature G/T,

and the ratio of carrier power to noise

density C/kT.
CEEE Technical Progress Bulletin - March 84 Page 11

CEEE CALENDAR, cont'd.

The course will cover both theory and

practice of precision noise measure- ments; the practical lectures are

designed to stand alone and to be

understood by those having minimal

mathematical background.

[Contact: Sunchana Perera (303) 497-

3546]

June 18-21 (Gaithersburg, MD)

Power Electronics Specialists

Conference. Co-sponsored by the

National Bureau of Standards and the

Power Electronics Council of the

Institute of Electrical and Electrbnics

Engineers, the Conference is intended to

provide a venue where specialists in

circuits, systems, electron devices,

magnetics, control theory, instrumentation, and power engineering may

discuss new ideas, research,

development, applications, and the

latest advances in power electronics.

The Conference will incorporate six

technical sessions (on converter

circuits, converter systems, converter

control, motor drives, power components,

and modeling and analysis techniques),

a one-day tutorial on Electromagnetic

Compatibility in Power Systems, and

three special "rap sessions" (EMI, RFI,

and Noise: Fact or Fiction; Emerging

Power Semiconductors: Positive and

Negative Attributes; and Future Trends

in Aircraft Power Electronics and

Electrical Actuators).

TContact: Sandra B. Kelley (301)

921-3541]

August 28-30 (Vail , CO)

Short Course on Optical Fiber

Measurements. This course is

addressed to scientists and engineers

who are involved in fiber

cha racteri zat i on . The course will

emphasize concepts, techniques, and

apparatus used in measuring the

engineering parameters of

telecommunication-grade fibers. A

degree is electrical engineering or physics is assumed. The course will

last three days with 18 hours of class

time.

[Contact: Robert L. Gallawa (303)

497-3761]

October 2-3 (Boulder, CO)

Symposium on Optical Fiber Measurements.

This symposium, the third in the series

of biennial meetings, is cosponsored by

the National Bureau of Standards, the

Optical Society of America, and the

Optical Waveguide Communications

Committee of the Institute of Electrical

and Electronics Engineers. Papers have

been solicited "for any experimental or analytical aspect of the characterization of optical fibers and fiber optics

systems, including attenuation,

bandwidth/distortion, dispersion, index

profile, cut-off wavelength, mode

diameter/core geometry, fiber device

(e.g., joint, coupler, multiplexer)

evaluation, physical measurements, link

parameters (e.g., concatenation),

polarization characteristics, system

performance, field measurements, and

standards."

[Contact: Douglas L. Franzen (303)

497-3346]

October 15-17 (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers. The Symposium is the

principal forum for the exchange of

information on the physics and

technology of materials for high-power

lasers. Topics to be discussed inlcude

new materials, bulk damage phenomena,

surface and thin film damage, design

considerations for high-power systems,

and fundamental mechanisms of laserinduced damage. The series of

conference proceedings resulting from

these annual symposia has collectively

become the principal repository of

information on optics for all aspects of

h i g h

- p o w

e

r / h i g h - e n

e

r gy lasers,

including, in addition to the subjects

given above, environmental degradation,

durability, fabrication, material growth
Page 12 CEEE Technical Progress Bulletin - March 84

CEEE CALENDAR, cont'd.

and deposition processes, and testing.

[Contact: Aaron A. Sanders (303) 497-

5341]

NEW STANDARD REFERENCE MATERIALS

Two new Standard Reference Materials

(SRMs) for calibrating equipment used to

make spreading resistance measurements

have been released by the Semiconductor

Materials and Processes Division to the

NBS Office of Standard Reference

Materials for sale to the public. SRM

2526 applies to (lll)-oriented p-type

silicon surfaces and SRM 2527 to jlll)-

oriented n-type silicon surfaces. Each

SRM consists of a set of about 15

specimens (number of specimens varies

depending on availability of material of

appropriate resistivities) of silicon,

6 x 12 mm in area and mounted on beveled

metal blocks for convenient use in

calibrating commercial spreading

resistance equipment. These silicon

chips have resistivities ranging from

about 0.001 to 200 fl-cm. Slices are measured before dicing; only slices

having uniformity of resistivity within

predetermined bounds are selected. The

uncertainties in resistivity range

typically from 2 to 5 percent for £-type

specimens and from 4 to 10 percent for

n-type. Two companion SRMs for (110)

silicon surfaces are about to be

released (2528, p-type and 2529, n- type)

.

SPONSORS OF WORK REPORTED IN THIS ISSUE

National Bureau of Standards

Department of Defense

Defense Advanced Research Project

Agency; Calibration Coordination

Group; Defense Nuclear Agency

U.S. Ai r Force

Bolling Air Force Base; Kirtland

AFB; Newark Air Force Station; Space

Division; Wright-Patterson AFB

U.S. Army

Aviation Research & Development

Command; Fort Huachuca; Fort Monmouth; Materials & Mechanics

Research Center; Redstone Arsenal

U.S. Navy

Aviation Logistics Center (Patuxent

River); Medical Research & Development Command; Metrology Engineering

Center (Seal Beach); Naval Air Systems Command; Naval Ship Research & Development Center; Naval Sea Systems Command; Naval Surface Weapons

Center; Naval Weapons Support Center

(Crane); Office of Naval Research

Department of Energy

Bonneville Power Administration;

Energy Systems Research; Fusion

Energy

Department of Justice

Law Enforcement Assistance

Administration

Department of Transportation

National Highway Traffic Safety

Admi nistration

Environmental Protection Agency

Charles Stark Draper Laboratory

International Copper Research

Association

Sandia Laboratories
NBS-114A <REV. 2-80

U.s. DEPT. OF COMM. BIBLIOGRAPHIC DATA

SHEET (See instructions)

1. PUBLICATION OR

REPORT NO.

NBSIR 84-2857-1

2. Performing Organ. Report No 3. Publication Date

June 1984

4. TITLE AND SUBTITLE

Center for Electronics and Electrical Engineering Technical Progress Bulletin,

Covering Center Programs January - March 1983 o»d GtoBrcmt 19 8<

'

i

’(3EBE Oaliandai*

5. AUTHOR(S)

Compiler: J. Franklin Mayo-Wells

6. PERFORMING ORGANIZATION (If joint or other than NBS. see in struction s)

NATIONAL BUREAU OF STANDARDS

DEPARTMENT OF COMMERCE

WASHINGTON, D.C. 20234

7. Contract/Grant No.

8 . Type of Report & Period Covered

January - March 1983

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street, City. State. ZIP)

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

10. SUPPLEMENTARY NOTES

All technical information included in this document has been approved for

publication previously.

] Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bi bl iography or literature survey, mention it here)

This is the second issue of a quarterly abstract journal covering the work of the

National Bureau of Standards Center for Electronics and Electrical Engineering.

This issue of the CEEE Technical Progress Bulletin covers the first quarter of

calendar year 1983. Abstracts are provided by technical area for both published

papers and papers approved by NBS for publication.

12. KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semi col antennas; electrical engineering; electrical power; electromagnetic interference ; electronics; instrumentation; lasers; magnetics; microwave; optical fibers;

semiconductors; superconductors.

13. AVAILABILITY

|_5) Unlimited

Qj For Official Distribution. Do Not Release to NTIS

Q 0rder From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C.

20402.

[X j Order From National Technical Information Service (NTIS), Springfield, VA. 22161

14. NO. OF

PRINTED PAGES

16

15. Price

$7.00

UICOmm^OC • 04

1

**
CENTER FOR

ELECTRONICS AND ELECTRICAL ENGINEERING

±

ELECTROSYSTEMS

DIVISION

| Applied Electrical

I Measurements

Electronic Instrumentation and Metrology

ELECTROMAGNETIC

FIELDS

DIVISION

Antenna Systems HMetrology

H

Fields Charai

j

Interference

Characterization

Characterization

ELECTROMAGNETIC TECHNOLOGY

DIVISION

HMicrowave Metrology

H

Optical Electronic Metrology

JCryoelectronics

I Metrology

Superconductors

^and Magnetic

Materials

KEY CONTACTS

SEMICONDUCTOR

MATERIALS AND

PROCESSES

DIVISION H

Silicon Characterization

Process Control Measurements

I Micrometrology

^Compound

Semiconductor

Processing Facility

SEMICONDUCTOR

DEVICES AND

CRCUfTS

DIVISION

Integrated

Circuit Test

Structures

Device and HProcess

Modeling

H

Device

Metrology

NBS/CEEE/FEB 64

Center (720)

Mr. Judson C. French (301) 921-3357

Dr. Alvin H. Sher (301) 921-3357

Ms. Carol P. Mullis (301) 921-3357

Director

Deputy Director

Administrative Officer

Electrosystems Division (722)

Chief

Electromagnetic Fields Division (723)

Chief

Electromagnetic Technology Division (724)

Chief Dr. Robert A. Kamper (303) 497-3535

Semiconductor Materials and Processes Division (725)

Chief Mr. Robert I. Scace (301) 921-3786

Semiconductor Devices and Circuits Division (726)

Dr. Oskars Petersons (301) 921-2328

Mr. Charles K.S. Miller (303) 497-3131

Chief Dr. Kenneth F. Galloway (301) 921-3541

INFORMATION:

For additional information on the Center for Electronics and Electrical

Engineering, write to or call:

Center for Electronics and Electrical Engineering

National Bureau of Standards

Metrology Building, Room B-358

Gaithersburg, Maryland 20899 Telephone (301) 921-3357

USCOMM-NBS-DC