Center for Electronics and

Electrical Engineering

Technical

Publication

Announcements

Covering Center Programs,

April to June 1988,

with 1988 CEEE Events Calendar

November 1988

U.S. Department of Commerce

National Institute of Standards and Technology

National Engineering Laboratory

Gaithersburg, Maryland 20899

^or c0 w *

QC

100

. U 5 6

88-3895

1988

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J
INTRODUCTION TO THE CEEE TECHNICAL PUBLICATION ANNOUNCEMENTS

This is the seventeenth issue of a quarterly publication providing information on the

technical work of the National Institute of Standards and Technology (formerly the

National Bureau of Standards) Center for Electronics and Electrical Engineering. This

issue of the CEEE Technical Publication Announcements covers the second quarter of

calendar year 1988.

Organization of Bulletin : This issue contains citations and abstracts for Center

publications published in the quarter. Entries are arranged by technical topic as

identified in the table of contents and alphabetically by first author within each

topic. Following each abstract is the name and telephone number of the individual to

contact for more information on the topic (usually the first author) . This issue

also includes a calendar of Center conferences and workshops planned for calendar

year 1988 and a list of sponsors of the work.

Center for Electronics and Electrical Engineering : Center programs provide national

reference standards, measurement methods, supporting theory and data, and traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U.S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor Technology Program, carried out by the Semiconductor Electronics Division in Gaithersburg, MD, and the Signals and Systems Metrology Program, carried out by the Electrosystems Division in Gaithersburg and the Electromagnetic Fields and Electromagnetic

Technology Divisions in Boulder, CO. See the table of contents on the opposite page

for identification of the topics covered by each program, as represented in this

issue. Key contacts in the Center are given on the back cover; readers are encouraged

to contact any of these individuals for further information.

Center sponsors : The Center Programs are sponsored by the National Institute of Standards and Technology and a number of other organizations, in both the Federal and

private sectors; these are identified on page 10.

Note on Publication Lists : Guides to earlier as well as recent work are the publication lists covering the work of each division. These lists are revised and reissued

on an approximately annual basis and are available from the originating division. The

current set is identified in the Additional Information section, page 8.
CEEE Technical Publication Announcements - November 1988 Page 1

TABLE OF CONTENTS

INTRODUCTION inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM 2

Dimensional Metrology 2

Power Devices 2

Insulators and Interfaces 2

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 3

Waveform Metrology 3

Cryoelectronic Metrology 3

Antenna Metrology 3

Microwave & Millimeter-Wave Metrology . * 3

ELECTRICAL SYSTEMS 4

Power Systems Metrology 4

Superconductors 4

Magnetic Materials & Measurements ....... 5

Other Electrical Systems Topics 5

ELECTROMAGNETIC INTERFERENCE * 6

Radiated Electromagnetic Interference 6

Conducted Electromagnetic Interference 8

ADDITIONAL INFORMATION . 8

RECENTLY ISSUED STANDARD REFERENCE MATERIALS 9

1988 CEEE CALENDAR . . 9

SPONSOR LIST 10

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Pa ge 2, CEEE Technical Publication Announcements - November 1988

SEMICONDUCTOR TECHNOLOGY

Dimensional Metrology

Postek, M.T., Keery, W.J., and Larrabee,

R.D., The Relationship Between Accelerating Voltage and Electron

Detection Modes to Linewidth Measurement in an SEM, Journal of Scanning

Microscopy, Vol. 10, pp . 10-18 (1988).

The basic premise underlying the use of

the scanning electron microscope (SEM)

for linewidth metrology in semiconductor

research and production applications is

that the video image acquired, displayed, analyzed, and ultimately

measured accurately reflects the

structure of interest. However, it has

been clearly demonstrated that image

distortions can be caused by the

detected secondary electrons not

originating at the point of impact of

the primary electron beam and by the

type and location of the secondary

electron detector. These effects and

their contributions to the actual image

or linewidth measurement have not been

fully evaluated. Effects due to

uncertainties in the actual location of

electron origination do not affect pitch

(line center- to-center or similar-edgelocation-to-similar-edge-location

spacing) measurements as long as the

lines have the same edge geometries and

similar profiles of their images in the

SEM. However, in linewidth measurement

applications, the effects of edge

location uncertainty are additive and

thus give twice the edge detection error

to the measured width. The basic intent

of this work is to demonstrate the

magnitude of the errors introduced by

beam/specimen interactions and the mode

of signal detection at a variety of

beam acceleration voltages and to

discuss their relationship to precise

and accurate metrology.

[Contact: Michael T. Postek, (301) 975-

2299]

Power Devices

Blackburn, D.L., and

Galloway, K.F., A Steady-State Model

for the Insulated Gate Bipolar

Transistor, Physics of Semiconductor

Devices (Proceedings of the Fourth

International Workshop, Madras, India,

December 10-15, 1987), S.C. Jain and S.

Radhakrishna , Eds. (World Scientific,

Singapore, 1988), pp . 22-38.

The power Insulated Gate Bipolar

Transistor (IGBT) is a switching device

designed to overcome the high on-state

loss of the power MOSFET. The IGBT

behaves as a bipolar transistor which is

supplied base current by a MOSFET. The

bipolar transistor of the IGBT has a wide base with the base contact at the

collector edge of the base and is

operated with its base in high-level

injection. The usual bipolar transistor

models are not adequate for the IGBT.

This paper describes a model for the

IGBT developed using ambipolar transport . [Contact: Allen R. Hefner, (301) 975-

2071]

Insulators and Interfaces

Carver, G.P., Kopanski , J.J., Novotny,

D.B., and Forman, R.A.Specific

Contact Resistivity of Metal-Semiconductor Contacts -- A New, Accurate

Method Linked to Spreading Resistance,

IEEE Transactions on Electron Devices,

Vol. 35, No. 4, pp . 489-497 (April

1988) .

A new method to deduce the specific

contact resistivity of metal-semiconductor contacts has been developed that

allows separation of the components

contributing to the total series

resistance between two contacts. The

principle of the method is the subtraction of the semiconductor spreading

resistance, deduced from a four-contact

resistivity measurement, from the total

two-contact resistance. This procedure

requires geometrically well-defined

small contacts that are accurately

fabricated by lithographic methods.

Using the method, accurate values were

Hefner obtained for the specific contact

A . R . ,
CEEE Technical Publication Announcements - November 1988 Page 3

Insulators and Interfaces (cont'd.)

resistivity of an aluminum- 1 . 5% silicon

alloy to p-type silicon wafers having

dopant densities from 5 x 10^ to 2 x

1 0 20 cm

- ^. The specific contact

resistivity values are lower than

previously published values obtained

using earlier methods in which parasitic

and nonideal effects could not be

quantified or eliminated. The lower

values indicate that contact resistance

has a less limiting effect on the

performance of integrated circuits than

presently believed.

[Contact: Joseph J. Kopanski , (301)

975-2089]

FAST SIGNAL ACQUISITION, PROCESSING, AND

TRANSMISSION

Waveform Metrology

Lawton, R.A.

and Anderson, W.T.TwoLayer Dielectric Microstrip Line

Structure: Si02 on Si and GaAs on Si:

Modeling and Measurement, IEEE Transactions on Microwave Theory and Techniques, Vol. 36, No. 4, pp . 785-789

(April 1988)

Further development of the modeling of

the two-layer dielectric stripline

structure is reported by computing the

scattering parameter S 21 derived from

the model and comparing the computed

value with the measured value over the

frequency range from 45 MHz to 25 GHz.

The sensitivity of S 21 to various

parameters of the structure is also

discussed. Examples of measurement and

modeling of the silicon dioxide on

silicon system and modeling of the

gallium arsenide on silicon system are

given.

[Contact: William L. Gans , (303) 497-

3538]

Crvoelectronic Metrology

Go, D., Hamilton, D., Lloyd, F.L.,

Dilorio, M.S., and Withers, R.S., A

Superconducting Analog Track-and-Hold

Circuit, IEEE Transactions on Electron

Devices, Vol. 35, No. 4, pp . 498-501

(April 1988)

A superconducting analog track-and-hold

circuit has been designed, fabricated,

and tested. Experimental results

demonstrate a 1.2-GHz bandwidth and a 25-dB dynamic range. Model calculations

indicate that an optimized circuit with

a critical current density of 10,000

A/cm^ can achieve a 4-GHz bandwidth and

a 35-dB dynamic range.

[Contact: Diane Go, (303) 497-3770]

Antenna Metrology

Muth, L.A.

Displacement Errors in

Antenna Near- Fie Id Measurements and

Their Effect on the Far Field, IEEE

Transactions on Antennas and Propagation, Vol. 36, No. 5, pp . 581-591 (May

1988).

The effects of probe displacement errors

in the near-field measurement procedure

on the far-field spectrum are studied.

Expressions are derived for the

displacement error functions that

maximize the fractional error in the

spectrum both for the on-axis and offaxis directions. The x-y and z- displacement errors in planar scanning

are studied first, and the results are

then generalized to errors in spherical

scanning. Some simple near-field models

are used to obtain order-of-magnitude

estimates for the fractional error as a function of relevant scale lengths of

the near field, defined as the lengths

over which significant variations occur.

[Contact: Lorant A. Muth, (303) 497-

3603]

Microwave & Millimeter-Wave Metrology

Hoer, C.A., An Equivalent Circuit for

Imperfect Transmission Line Connectors,

Digest of the 1988 Conference on

Precision Electromagnetic Measurements,

Tsukuba, Japan, June 7-10, 1988, pp.

264-265.

An exact equivalent circuit for a pair

of transmission line connectors is
Page 4 CEEE Technical Publication Announcements - November 1988

Microwave & Millimeter-Wave (cont'd.)

developed. New reference planes are

chosen in such a way that all imperfections in the connector pair can be

lumped into one connector or the other.

This makes it possible to compensate for

imperfections in test port connectors

when calibrating network analyzers.

[Contact: Cletus A. Hoer, (303) 497-

3705]

Holt, D.R. , Determination of Scattering

Parameters from Precision Coaxial AirLine Standards, Digest of the 1988

Conference on Precision Electromagnetic

Measurements, Tsukuba, Japan, June 7-

10, 1988, p. 263.

Scattering parameter expressions are

developed for the principal mode of a

coaxial air line. Dimensional variations in the inner and outer conductors

and skin effect are included in the

model. An error analysis reveals that

accuracy of the scattering parameters is

primarily dependent on the precision of

the measurements of conductor radii.

[Contact: Donald R. Holt, (303) 497-

3574]

ELECTRICAL SYSTEMS

Power Systems Metrology

Van Brunt, R.J., and Kulkarni, S.V., New

Method for Measuring the Stochastic

Properties of Corona and Partial

Discharge Pulses, Conference Record of

the 1988 IEEE International Symposium

on Electrical Insulation, Boston, Massachusetts, June 7, 1988, pp . 233-237.

A new computer-based method for

measuring the statistical characteristics of corona or partial discharge

pulses is described. The method allows

direct measurement of a set of conditional probability distributions that

reveal correlations among successive

pulse amplitudes, pulse time intervals,

and between pulse amplitudes and time

intervals. Application of the method to

an investigation of ultraviolet

sustained negative corona (Trichel)

pulses in air has shown the existence of

strong correlations between pulse

amplitude and time interval as well as between amplitudes of successive pulses.

The observed correlations appear to be

consistent with existing models for

Trichel pulse formation.

[Contact: Richard J. Van Brunt, (301)

975-2425]

Superconductors

Ekin, J.W., Panson, A.J., and Blankenship, B.A. , Effect of Oxygen Annealing

on Low-Resistivity Contact for High-Tc Superconductors, Proceedings of the

Materials Research Society 1988 Spring

Meeting, Symposium K, Reno, Nevada,

April 5-8, 1988, Vol. 99, pp . 283-286.

A method for making low-resistivity

contacts to high-Tc superconductors has

been developed, consisting of depositing

noble metal contact pads (silver or

gold) on a clean superconductor surface

at low temperatures (<150°C) . After

annealing the silver contact pads in

oxygen at intermediate temperatures

(<500°C) for 1 h, contact resistivities

less than 2 x 10~® fl-cm^ at 76 K are

obtained, about six orders of magnitude

less than for indium-solder contacts.

Before annealing, the contact resistivities are still very low, in the 10"^

to 10"^ fl-cm^ range at 76 K, which

would be useful when contacts with low

fabrication temperatures are required.

The voltage-current characteristics of

the contacts are strongly nonlinear

after annealing, having a superconducting transition character. This is

ascribed to the critical current of the

superconducting material being exceeded

at the contact interface. External

connections to the contact pads have

been made using both solder and

thermosonic wire-bonding techniques.

[Contact: John W. Ekin, (303) 497-5448]

Goodrich, L.F., Development of Standards

for Superconductors, NBSIR 88-3088

(February 1988).
CEEE Technical Publication Announcements - November 1988 Page 5

Superconductors (cont'd.)

A cooperative program with the Department of Energy, the National Bureau of

Standards, other national laboratories,

and private industry is in progress to

develop standard measurement practices

for use in large-scale applications of

superconductivity. Research for the

period January 1986 through December

1987 is described. This report contains

the results of critical-current studies

on the effect of power supply current * ripple, measurements on single strands

extracted from cables, a round robin on

a large NbTi monolithic conductor, and

a Nb 3 Sn round robin. Several useful

current supply circuits have been

developed. The reduction coupling

losses in multifilamentary NbTi

conductors have been addressed by a

study of the magnetic properties of

matrix material consisting of dilute

alloys of Mn in Cu. In addition, the

technique of vibrating- sample magnetometry is shown to be adaptable to

the measurement of coupling losses in

addition to hysteresis losses in

multifilamentary conductors.

[Contact: Loren F. Goodrich, (303) 497-

3143]

Goodrich, L.F., Bray, S.L., and Clark,

A.F., Current-Ripple Effect on

Superconductive dc Critical-Current

Measurements, Advances in Cryogenic

Engineering Materials, Vol. 34, pp.

1019-1026 (1988) .

The effect of current ripple or noise on

dc critical-current measurements was

systematically studied. Measurements

were made on multifilamentary NbTi

superconductors. A low-noise, batterypowered current supply was required in

this study in order to make the pure dc

critical-current measurements. Also, an

electronic circuit that simulates a

superconductor's general current-voltage

characteristic was developed and used as

an analysis tool. In order to make

critical-current measurements in which

current ripple was present, the battery

supply was modified to allow the

introduction of controlled amounts of ac

ripple. In general, ripple in a current

supply becomes more significant above

500 A, because effective filtering is

difficult. The effect of current ripple

is a reduction in the measured dc

critical current; however, ripple of

sufficient amplitude can result in

arbitrary measurement results. The

results of this work are general and

quantitatively applicable to the

evaluation of critical-current data and

measurement systems. A theoretical

model was developed to further support

and explain the ripple effect: An

unexpected benefit of this work was that

it led to a more precise method for

general critical-current data acquisition. Problems common to all largeconductor critical-current measurements

are discussed.

[Contact: Loren F. Goodrich, (303) 497-

3143]

Magnetic Materials & Measurements

Fickett, F.R. , Transverse Magnetoresistance of Oxygen- Free Copper, IEEE

Transactions on Magnetics, Vol. 24, No.

2, pp. 1156-1158 (March 1988).

Recent studies on the magnetoresistance

of copper with residual resistance

ratios (RRR) in the range 100 to 1000

using cold work and irradiation as

parameters modifying RRR show a large

spread in the appropriate region of the

Kohler plot. This spread is much larger

than that found in our earlier work on

very pure copper in which we used

temperature as the main variable. We

report results of 4-K magnetoresistance

measurements on a large number of

samples of copper from various sources

and in various states of cold work,

strain, and reanneal. A new look is

taken at the Kohler plot as a method for

predicting magnetoresistive behavior.

[Contact: Frederick R. Fickett, (303)

497-3785]

Other Electrical Systems Topics

Mopsik, F.I., Kelley, E.F., and Martz-
Page 6 CEEE Technical Publication Announcements - November 1988

Other Electrical Systems (cont'd.)

loff, F.D., A Review of Candidate

Methods for Detecting Incipient Defects

Due to Aging of Installed Cables in

Nuclear Power Plants, NBSIR 88-3774

(May 1988).

Several types of test methods have been

proposed for detecting incipient

defects due to aging in cable insulation

systems, none offering certainty of

detecting all possible types of 'defects.

Some methods constitute direct detection

of a defect in the cable; other methods

detect changes in electrical or nonelectrical parameters from which

inferences can be drawn on the integrity

of the cable. The paper summarizes the

first year of a program conducted at the

National Bureau of Standards to assess

the potential of success for in-situ

detection of incipient defects by the

most promising of these methods.

[Contact: Francois D. Martzloff, (301)

975-2409]

ELECTROMAGNETIC INTERFERENCE

Radiated Electromagnetic Interference

Hill, D.A. , A Circular Array for PlaneWave Synthesis, IEEE Transactions on

Electromagnetic Compatibility, Vol. 30,

No. 1, pp. 3-8 (February 1988).

We analyze a circular array of electric

line sources for generating a uniform

plane wave in the interior region of the

array. Identical results for the

synthesized element weightings are

obtained using matrix inversion or a Fourier series technique. A physical

optics approximation for the element

weightings is also presented, but it

yields a much poorer result for the

synthesized field. The angle of arrival

of the plane wave can be scanned by

recalculating the element weightings,

and the quality of the field is

maintained. Frequency scanning is also

possible, but the number of array

elements limits the maximum frequency.

[Contact: David A. Hill, (303) 497-

3472]

Kanda, M. , and Driver, L.D., An Optically Linked Electric and Magnetic

Field Sensor for Poynting Vector

Measurements in the Near Field of

Radiating Sources, Digest of the 1988

Conference on Precision Electromagnetic

Measurements, Tsukuba, Japan, June 7-

10, 1988, pp. 32-33.

An improved, single -element antenna

sensing technique is described which can

simultaneously measure the electric (E)

field, magnetic (H) field, and timedependent Poynting vector of electromagnetic (EM) fields. Two radio-frequency

voltages are produced which, along with

relative phase and frequency information, are transmitted to a remotely

located vector analyzer by a pair of

matched fiber optic downlinks.

[Contact: Motohisa Kanda, (303) 497-

5320]

Ma, M.T. , Theory and Measurements of

Unintentional Radiators, Digest of the

1988 Conference on Precision Electromagnetic Measurements, Tsukuba, Japan,

June 7-10, 1988, pp . 30-31.

By characterizing an unknown emitter

with equivalent vector electric- and

magnetic-dipole moments, we formulate a theoretical basis to express the

radiation properties of such an emitter

in terms of these unknown dipole

moments. Power and relative phase

measurements from appropriate ports of a transverse electromagnetic cell, when

the emitter is placed at the cell's

center, are proven to be sufficient to

determine quantitatively the unknowns

and, therefore, the radiation characteristics . [Contact: Mark T. Ma, (303) 497-3800]

Randa, J.P., Kanda, M. , Melquist, D.G.,

Sega, R.M.

and Norgard, J.D., High

Frequency Electrie -Fie Id Probe Development, Proceedings of the International

Conference on Electromagnetic Compatibility (EMC EXPO' 88), Washington,

D.C., May 10-12, 1988, pp . T15.31-
CEEE Technical Publication Announcements - November 1988 Page 7

Radiated EMI (cont'd.)

T15.37.

Various designs have been considered for

electric-field probes for the frequency

range 26 to 110 GHz. A fiber optic

temperature sensor to detect the

heating of a resistive strip was

designed, built, and tested. With

increased sensitivity, this design may

be capable of operating to above 100

GHz.

[Contact: James P. Randa, (303) 497-

3150]

Vanzura, E.J., Automated System for

Electromagnetic Field Generation and

Immunity Testing, Proceedings of the

1988 IEEE Instrumentation/Measurement

Technology Conference, San Diego,

California, April 19-22, 1988, pp . 3-

10 .

An interactive computer-controlled

system has been constructed for radiated

immunity measurements. It can set up a desired unperturbed field strength at a

point in space and simultaneously

measure field strengths and polarizations at up to ten different positions.

Field mapping experiments have been

performed with the system in an anechoic

chamber, a partially loaded shielded

room, and an unloaded shielded room.

Results confirm dramatic improvement in

spatial field uniformity as more

absorber is used. If the unperturbed

fields in a specified test volume do not

deviate more than a desired amount for

any frequency of interest, meaningful

immunity tests can be performed. An

equipment under test is placed into the

test volume and its response to

radiation is measured using current

probes and a spectrum analyzer. Such an

experiment requires many mid-experiment

calculations, making automation highly

desirable because of significant time

savings

Our frequency range of interest is 50 to

200 MHz because this is a particularly

difficult frequency band in which to

perform reliable immunity tests. By

measuring the field variations in a test

zone, systematic uncertainty limits due

to spatial field deviations can be

estimated more accurately. This allows

testing in an anechoic chamber below

what is normally considered its lowest

usable frequency. If an anechoic

chamber is not available, a partially

loaded shielded room can be used, with

the necessary requirement that specifications on spatial field uniformity be

relaxed.

This measurement system can be used in

conjunction with many other facilities,

such as a tranverse electromagnetic

cell, an open-field site (ground screen)

or a reverberating chamber, and can be

used to test at frequencies from the low

» kilohertz up to 2 GHz.

[Contact: Eric J. Vanzura, (303) 497-

5752]

Vanzura, E.J., and Adams, J.W., Electromagnetic Fields in Loaded Shielded

Rooms, Test and Measurement World, pp

72ff (November 1987)

This paper describes a computercontrolled feedback system that can

maintain field strength levels within

moderate bounds inside a partially

loaded shielded room. These levels are

relatively uniform over a large enough

volume to allow radiated immunity

testing of moderate-sized objects. The

frequency range depends on the characteristics of the transmit antenna; we

used 50 to 200 MHz, which is a difficult

range to cover because of limitations of

other EMC susceptibility test facilities .

The measurement system consists of a computer, signal generator, amplifier,

biconical antenna, and an isotropic

probe system.

[Contact: Eric J. Vanzura, (303) 497-

5752]

Wilson, P.F., A Comparison Between NearField Shielding-Effectiveness Measurements Based on Coaxial Dipoles and on
Page 8

Radiated EMI (cont'd.)

CEEE Technical Publication Announcements - November 1988

Electrically Snail Apertures, IEEE

Transactions on Electromagnetic

Compatibility, Vol. 30, No. 1, pp . 23-

28 (February 1988).

The near-field shielding effectiveness

of a material may be measured by placing

it between two closely spaced dipoles

(electric or magnetic) and noting the

resulting insertion loss. An alternative approach is to cover an electrically small aperture with the test material

and to measure the resulting loaded

aperture polarizability (electric or

magnetic) , as is done in a dual TEM

cell. Expressions are developed herein

which relate these two configurations.

[Contact: Perry F. Wilson, (303) 497-

3842]

Wu, D.I., and Chang, D.C., The Effect of

a Large Rotating Scatterer in a

Rectangular Cavity, NBS Technical Note

1317 (March 1988).

In a mode-stirred chamber, the field in

the cavity is perturbed with a stirrer,

i.e., a rotating scatterer, in such a way that it is uniformly random. In

this report, we investigate the key

factor which governs the effectiveness

of a stirrer. By examining the

fundamental properties associated with a perturbing body in a cavity, we find

that the key to effective field

perturbation lies in the shifting of

eigenmode frequencies. When the size of

the perturbing body becomes large, the

shifting may be large enough that the

new perturbed modes no longer resemble

the original unperturbed modes. In

effect, as this body rotates, different

perturbed modes may be excited, thus

introducing randomness into the system.

We illustrate this phenomenon by

examining a 2D cavity with a ID

perturbing body. Using the transmission-line-matrix method, the shifting of

eigenfrequencies and the variation on

the magnitude of the fields for

different stirrer sizes are computed.

From this analysis, useful insights are

drawn which include an analogy between

the action of a large stirrer and a frequency modulator.

[Contact: Doris Wu, (303) 497-3214]

Conducted Electromagnetic Interference

Martzloff , F.D. , and Levinson, L.M.

Surge -Protective Devices [original

title . . . and Zinc Varistor Technology] , in Electronic Ceramics--

Properties, Devices, and Applications,

L.M. Levinson, Ed. , Chapter 5 (Marcel

Dekker, Inc., New York, 1988), pp. 275-

305.

A tutorial description of surgeprotective devices and their applications and requirements is given,

comparing the three basic technologies:

crowbars, varistors, and avalanche

diodes. The varistor material is

described in detail from the electronic

ceramics point of view. Thirty

references are given.

[Contact: Francois D. Martzloff, (301)

975-2409]

ADDITIONAL INFORMATION

Lists of Publications

Gibson, K.A.

Page, J.M., and Miller,

C.K.S., A Bibliography of the NBS

Electromagnetic Fields Division

Publications, NBSIR 85-3040 (February

1986) .

This bibliography lists publications of

the National Bureau of Standards'

Electromagnetic Fields Division for the

period from January 1984 through

September 1985, with selected earlier

publications from the Division's

predecessor organizations.

[Contact: Kathryn A. Gibson, (303) 497-

3132]

Kline, K.E., and DeWeese, M.E.,

Metrology for Electromagnetic Technology: A Bibliography of NBS Publications, NBSIR 87-3074 (June 1987).

This bibliography lists the publications
CEEE Technical Publication Announcements - November 1988 Page 9

Lists of Publications (cont'd.)

of the personnel of the Electromagnetic

Technology Division of NBS in the period

from January 1970 through December 1986.

A few earlier references that are

directly related to the present work of

the Division are included.

[Contact: Sarabeth Moynihan, (303) 497-

3678]

Palla, J.C., and Meiselman, B.,

Electrical and Electronic Metrology: A

Bibliography of NBS Electrosystems

Division Publications, NBS List of

Publications 94 (January 1988)

This bibliography covers publications of

the Electrosystems Division-, Center for

Electronics and Electrical Engineering,

NBS, and of its predecessor sections for

the period January 1963 to January 1988.

A brief description of the Division's

technical program is given in the

introduction.

[Contact: Jenny C. Palla, (301) 975-

2220 ]

Walters, E.J., Semiconductor Measurement

Technology, NBS List of Publications 72

[a bibliography of NBS publications

concerning semiconductor measurement

technology for the years 1962-1987]

(March 1988) .

This bibliography contains reports of

work performed at the National Bureau of

Standards in the field of Semiconductor

Measurement Technology in the period

from 1962 through December 1987. An

index by topic area and a list of

authors are provided.

[Contact: E. Jane Walters, (301) 975-

2050]

RECENTLY ISSUED

STANDARD REFERENCE MATERIALS

The Semiconductor Electronics Division

announces the release of a new Standard

Reference Material (SRM) for ellipsometrically derived thickness and

refractive index of a silicon dioxide

film on silicon. Available for sale to

the public through the NIST Office of

Standard Reference Materials [for

orders, (301) 975-6776], SRM 2530 is

separately available for three oxide

thicknesses: 50 run (2530-1), 100 run (2530-2), and 200 run (2530-3).

This SRM was developed to respond to

industry needs to evaluate the accuracy

of ellipsometers , but may also be used

as aid in the calibration of various

other optical and mechanical thickness

monitoring instruments.

Each SRM consists of a 76-mm (3-in.)

diameter silicon wafer on which a uniform silicon dioxide layer was grown,

patterned, and partially covered with

chromium. The certified values were

determined from measurements made using

the highly accurate ellipsometer

developed in the Division and are the

ellipsometric parameters delta, A, and

psi, \f>, at a wavelength of A = 632.8 run. The SRMs are also certified for the

derived values of thickness and refractive index of its silicon dioxide layer

determined by using a two -layer model

consisting of a silicon dioxide layer on

a thin silicon-rich oxide interlayer.

[Contact: George A. Candela, (301) 975-

2086]

1988 CEEE CALENDAR

October 26-28, 1988 (Boulder, CO)

Twentieth Symposium on Optical Materials

for High Power Lasers (Boulder Damage

Symposium). In addition to the NIST,

this symposium is sponsored by the

American Society for Testing and

Materials, the Air Force Office of

Scientific Research, the Office of Naval

Research, the Defense Advanced Research

Projects Agency, and the Department of

Energy. It serves as the principal

forum for the exchange of information on

the physics and technology of materials

for high-power lasers. Topics to be

discussed include new materials, bulk

damage phenomena, surface and thin- film

damage, design considerations for highpower systems, and fundamental mecha-
Page 10

CEEE Calendar (cont'd.)

CEEE Technical Publication Announcements - November 1988

nisms of laser- induced damage.

[Contact: Aaron A. Sanders, (303) 497-

5341]

February 7-9, 1989 (San Diego, CA)

IEEE Semiconductor Thermal and Temperature Measurements Symposium. This

fifth annual SEMI-THERM symposium is

sponsored by the Components , Hybrids

and Manufacturing Technology Society of

IEEE in cooperation with NIST and

constitutes an international forum for

the presentation of new developments

relating to generation and removal of

heat within semiconductor devices,

measurement of device temperatures , and

the simulation of device and system

thermal behavior. Major SEMI -THERM

topic areas include: thermal measurements; simulation, computation, and

software; thermal characterization; and

applications

The program includes keynote speakers,

technical presentations, tutorial

sessions, workshops, and an exhibit. In

addition, the Semiconductor Equipment

and Materials Institute (SEMI) and the

Joint Electron Devices Engineering

Council (JEDEC) have scheduled in

conjunction with SEMI -THERM several

Standards Committee Task Force meetings,

to which attendees are invited.

[Contact: Frank F. Oettinger, (301)

975-2054]

June 12-15, 1989 (Gaithersburg, MD)

International Conference on Narrow Gap

Semiconductors and Related Materials.

Jointly sponsored by the National

Institute of Standards and Technology

along with the U.S. Air Force Office of

Scientific Research, the American

Physical Society, the U.S. Office of

Naval Research, Texas Instruments, and

the University of North Texas, this

conference is the first in the narrow

gap field since 1981. The scope of the

conference includes such topics as

crystal growth and new materials; twodimensional physics; surfaces and

interfaces; superlattices and heterostructures; transport; impurities and

defects; optical properties; nonlinear

optical effects; device physics; lattice

properties; and hot or nonequilibrium

carrier effects.

[Contact: David G. Seiler, (301) 975-

2081]

September 11-13, 1989 (GarmischPartenkirchen, FDR)

VLSI and GaAs Chip Packaging Workshop

The IEEE CHMT Society and the National

Institute of Standards and Technology

are co-sponsoring the Eighth VLSI

Packaging Workshop. Topics to be

discussed include VLSI package design;

integrated package design; multichip

module design; WSI packaging; package

thermal design; package electrical

design; GaAs IC packaging; VLSI package

interconnection options; VLSI package

materials and die-attach solutions; and

failure mechanism and quality of VLSI

packages. All attendees are expected to

be specialists working in the field and

to participate in discussions.

[Contact: George G. Harman, (301) 975-

2097]

December 7-8, 1989 (Gaithersburg, MD)

Power Semiconductor Devices Workshop.

[Contact: David L. Blackburn, (301)

975-2068]

CEEE SPONSORS

National Institute of Standards and

Technology

U.S. Air Force

Newark Air Force Station; Rome Air

Development Center; Space & Missile

Organization; U.S. Air Force

Headquarters; Wright-Patterson AFB;

Technical Applications Center

(Patrick); Kirtland AFB; Electronics

Security Command

U.S. Army

Fort Belvoir; Fort Monmouth; Fort

Huachuca; Harry Diamond Laboratory;

Materials & Mechanics Research Center;
CEEE Technical Publication Announcements - November 1988 Page 11

CEEE Sponsors (cont'd.)

Redstone Arsenal; Strategic Defense

Command; AVRADCOM (Aviation)

Department of Commerce

Patent and Trademark Office

Department of Defense

Defense Nuclear Agency; Defense

Advanced Research Projects Agency;

National Security Agency; Combined

Army/Navy/Air Force Calibration

Coordination Group

Department of Energy

Energy Systems Research; Fusion Energy;

High Energy & Nuclear Physics;

Bonneville Power Administration

Department of Justice

Law Enforcement Assistance

Administration

U.S. Navy

Naval Ocean Systems Center; Weapons

Support Center/Crane; Naval Weapons

Station; Office of Naval Research;

Naval Sea Systems Command; Naval

Postgraduate School; Naval Ship

Research Development Center; Naval Air

Systems Command; Naval Research

Laboratory; Aviation Logistics

Center/Patuxent; Naval Explosive

Ordnance

National Aeronautics & Space

Administration

Goddard Space Flight Center; Lewis

Research Center

Nuclear Regulatory Commission

Department of Transportation

National Highway Traffic Safety

Administration

Sandia National Laboratories
'

•

,
MBS»1 1 4A ; re v. 2-sc) U.S. DEPT. OF COMM.

BIBLIOGRAPHIC DATA

SHEET (See instruction s)

4. TITLE AND SUBTITLE

1. PUBLICATION OR

REPORT NO.

2. Performing Organ. Report No. 3. Publication Date

NISTIR 88-3895 November 1988

Center for Electronics and Electrical Engineering Technical Publication Announcements

Covering Center Programs, April to June 1988, with 1988 CEEE Events Calendar

5. AUTHOR(S)

E. J. Walters, compiler

6. PERFORMING ORGANIZATION (If joint or other than NBS. see instructions) 7. Contract/Grant No.

NATIONAL BUREAU OF STANDARDS -

U.S. DEPARTMENT OF COMMERCE

GAITHERSBURG, MD 20899

9.

SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City. State, ZIP)

. Type of Report & Period Covered

Apr. - June 1988

U.S. Department of Commerce

National Institute of Standards and Technology

National Engineering Laboratory

Center for Electronics and Electrical Engineering

10.

SUPPLEMENTARY NOTES

j Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11.

ABSTRACT (A 200-word or less factual summary of most si gnificant information. If document includes a significant

bi bl iography or literature survey, mention it here)

This is the seventeenth issue of a quarterly publication providing information on the

technical work of the National Institute of Standards and Technology (formerly the

National Bureau of Standards) Center for Electronics and' Electrical Engineering.

This issue of the Center for Electronics and Electrical Engineering Technical Publication Announcements covers the second quarter of calendar year 1988. Abstracts are

provided by technical area for papers published this quarter.

12. KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolons)

antennas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers; semiconductors; superconductors

13. AVAILABILITY 14. NO. OF

PRINTED PAGES

| X j Unlimited

|

| For Official Distribution. Do Not Release to NTIS 15

Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C.

20402. 15. Price

Order From National Technical Information Service (NTIS), Springfield, VA. 22161 $9.95

USCOMM-DC 6043-P80
U.S. DEPARTMENT OF COMMERCE

NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY

GAITHERSBURG, MD 20899

RETURN POSTAGE GUARANTEED

OFFICIAL BUSINESS

PENALTY FOR PRIVATE USE, $300

BULK RATE

POSTAGE & FEES PAID NIST

PERMIT No. G195

KEY CONTACTS:

Center Headquarters (720) Director, Mr. Judson C. French (301) 975-2220

Deputy Director, Mr. Robert I. Scace (301) 975-2220

Electrosystems Division (722) Chief, Dr. Oskars Petersons (301) 975-2400

Electromagnetic Fields Division (723) Chief, Dr. Ramon C. Baird (303) 497-3131

Electromagnetic Technology Division (724) Chief, Dr. Robert A, Kamper (303) 497-3535

Semiconductor Electronics Division (727) Chief, Mr. Frank F. Oettlnger (301) 975-2054

INFORMATION:

For additional Information on the Center for Electronics and Electrical Engineering, write or call:

Center for Electronics and Electrical Engineering

National Institute of Standards and Technology

Metrology Building, Room B-358

Gaithersburg, MO 20899

Telephone (301) 975-2220