NBSIR 78-1444

Semiconductor Technology

Program

Progress Briefs

W. Murray Bullis, Editor

Electron Devices Division Center for Electronics and Electrical Engineering

National Engineering Laboratory

National Bureau of Standards

Washington, D.C. 20234

March 1978

Prepared for The Defense Advanced Research Projects Agency

The National Bureau of Standards

The Division of Electric Energy Systems, Department of Energy

The Division of Solar Technology, Department of Energy

The Defense Nuclear Agency

The Goddard Space Flight Center
SEMICONDUCTOR TECHNOLOGY PROGRAM

TABLE OF CONTENTS

Dopant Profiles from dc Measurements . . . Nondestructive Second Breakdown Test . . . Line-Width Measurement Calibrations . . . Resonance Ionization Spectroscopy . . . . Gold, Leakage Current Correlation . . . . Isotope Shift of Sulfur in Silicon . . . . X-Levels in Indium-Doped Silicon

Hall Effect Analysis Program

Electrical Alignment Test Structure . . . Scanning Acoustic Microscopy

Third Pacemaker Workshop

Future Events

New Projects

Work in Progress Recent Publications

Publications in Press Scheduled Talks

Preface

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ABSTRACT — This report provides information

on the current status of NBS work in measurement technology for semiconductor materials, process control, and devices. Re- sults of both in-house and contract research

are covered. Highlighted activities in- clude: analysis of X- levels in indium-doped

silicon; evaluation of an electrical alignment test structure; correlations of gold

density with leakage current in silicon; initial application of resonance ionization

spectroscopy; calibration of secondgeneration line-width measurement artifacts;

dopant profiling by dc measurements on MOSFETs; observation of an isotope shift In the sulfur deep level in silicon; development

of a nondestructive test for second

breakdown; analysis of scanning acoustic

microscopy; and the third pacemaker workshop.

In addition, brief descriptions of new and selected on-going projects are given. The report is not meant to be exhaustive; contacts for obtaining further information

are listed. Compilations of current

publications, publications in preparation,

and scheduled talks are also Included.

KEY WORDS —Electronics; integrated circuits; measurement technology; microelectronics;

semiconductor devices; semiconductor materials; semiconductor process control; silicon.

This report covers results of work during the thirty-eighth quarter of the NBS Semiconductor

Technology Program. This Program serves to focus NBS research on improved measurement technology for the use of the semiconductor device community in specifying materials, equipment,

and devices in national and international commerce and in monitoring and controlling device

fabrication and assembly. This research leads to carefully evaluated, well documented test procedures and associated technology which, when applied by the industry, are expected to contribute to higher yields, lower cost, and higher reliability of semiconductor devices and

to provide a basis for controlled improvements in fabrication processes and device

performance. By providing a common basis for the purchase specifications of government

agencies, improved measurement technology also leads to greater economy in government

procurement. Financial support of the Program is provided by a variety of Federal agencies.

The sponsor of each technical project is identified by a superscript numeral at the end of each entry in accordance with the following code: 1. The Defense Advanced Research Projects

Agency; 2. The National Bureau of Standards; 3. The Division of Electric Energy Systems,

Department of Energy; A. The Division of Solar Technology, Department of Energy; 5- The Defense Nuclear Agency; and 6. The Goddard Space Flight Center. This report is provided to disseminate results rapidly to the semiconductor community. It is not meant to be complete; in particular, references to prior work either at NBS or elsewhere

are omitted. The Program is a continuing one; the results and conclusions reported here are subject to modification and refinement. Further information may be obtained by referring to more formal technical publications or directly from responsible staff members, telephone:

(301) 321-1 isted extension. General information and a list of past publications may be obtained from the Electron Devices Division, National Bureau of Standards, Washington, D. C. 2023^, telephone: ( 301 ) 921*3786.

2
Semiconductor Technology Program

Progress Briefs

Dopant Profiles from dc Measurements

Dopant profiles can be determined from

measurement of the capacitance of an MQS

capacitor, junction diode, or Schottky

diode as a function of voltage. These

measurements require high frequency

signals; they cannot be performed on highspeed test equipment. A method was developed to determine profiles from dc measurements; it was described in the 15 December 1977 issue of Applied Physics

Letters. The method, which employs an enhancement-mode MOSFET, has been applied

to measurement of boron and phosphorus

implants in silicon as well as uniformly

doped silicon. Impurity redistribution

due to thermal oxidation can be distinctly

observed. Profiles obtained by this

method can be distorted by high channel

conductance which causes an apparent shift

of the profile toward smaller depths and

higher dopant density values. This

distortion can be eliminated by

extrapolating the data to the case of zero

Dopant prcfije of a phosphorus-implanted

region in 5-n-cm x-type silicon from dc measurements on an enhancement-mode MOSFET.

channel conductance. When this is done,

dopant densities measured by this method

on specimens uniformly doped to densities

about 10 16 cm

-3 agreed within two percent

with values measured by the capacitancevoltage method. 1 (M. G. Buehler, x35^l)

Nondestructive Second Breakdown Test

The nondestructive test method for detecting thermal instabilities of bipolar tran- sistors, previously applied to the refine- ment of the forward-bias safe operating

area (SOA) , has been extended to the determination of second breakdown susceptibility. The test method is based upon measuring the time derivative of emitterbase voltage (dV^B/dt) which shows a welldefined peak at the onset of instability.

This peak is used to trigger a removal of

power from the device under test before a hot spot can occur. For low-current operating conditions, second breakdown follows

immediately after the thermal instability.

At higher currents stable hot spots occur.

In this case, it is found that a second

peak in dV£B/dt occurs before actual

second breakdown. This reversal can be

used to trigger removal of power from the

device before second breakdown occurs, but

after thermal instability. This contrasts

with the more common method which allows a device to first experience second

breakdown before removal of power.

Although this method does not destroy the

device, the peak junction temperature

before shut-off may exceed 300°C.

Therefore, the method is not recommended

for device rating, testing, or inspection

of SOA limits. With it, however, one can generate the entire loci of both thermal

instability and second breakdown on a single device. Because previously used tests were destructive, determination of the actual second breakdown locus on a single

device has been heretofore impossible.

The new method can be employed with a sim-
pie modification of the standard circuit

for measuring thermal resistance with Vgg

as the temperature sensitive parameter.

Many second breakdown test circuits can also be modified to use the new sensing

technique. 2 (D. L. Blackburn, x3621)

Line-Width Measurement Calibrations

Calibration of selected lines on ten photomask- 1 i ke black-chrome-on-glass artifacts was initiated in preparation for a full-scale i nter laboratory evaluation of

the newly developed procedures for linewidth measurements in transmitted illumination. The pattern on these secondgeneration artifacts contains six rows of

ten isolated or multiple lines in the 1- to 10-pm range. Provision is made for

measurement of both line spacing and line

width. The rationale for the design of

this artifact is described in the January

1978 issue of Solid State Technology

.

In addition, a training seminar was conducted

at which representatives of 32 organizations — integrated circuit, instrument,

01234 56789

A -i-i-i-j-'i— 1-1-1-He H<H"HH»H!

f -HHHHII'

Pattern of second-generation photomask-like

artifact for line-width calibration.

and photomask houses — gained experience

in the line-width measurement procedures

through lectures, group discussions, and

laboratory exercises. Because of the suc- cess of this seminar and to meet the

demand for additional training of this

type, the second seminar in this series

has been scheduled to be held in June

1978. 1

» 2 (j. m. Jerke, x2185)

Resonance Ionization Spectroscopy

Initial results were obtained as a prelude

to the study of the applicability of resonance ionization spectroscopy to the

detection of very low (^1

0

1

2

cm" 3

) impurity densities in solids. In this

application, resonance ionization

spectroscopy will be combined with laserinduced vaporization. Research on this

technique is being conducted in order to develop it as an analytical tool to be applied to the detection of trace impurities in solid semiconductor

materials such as silicon and gallium

arsenide. Quantitative results are in principle possible through calibrated samples containing known impurity densities.

As a first step in this research, sodium

resonance ionization was demonstrated by a two-photon absorption experiment. Sodium

vapor was irradiated with two simultaneous

light pulses of wavelength = 589-592 nm and A 2 = 568.263 nm to induce 3

2 S 1 / 2

3

2 P 1/2 and 3

2 P 1/2 -*• ** 2 D transitions in atomic sodium included in a proportional

counter. Ionization of sodium in 4

2 D state takes place through further

interaction with Aj or A 2 light pulses.

The released photoelectron triggers a Townsend avalanche in the counter. Tunable dye lasers pulsed at 40-s

intervals with an energy of about 1 joule

per pulse were used to provide the light

pulses. 2 (S. Mayo, x3625)

Gold, Leakage Current Correlation

The variable temperature wafer prober

developed at NBS was used to make wafer

^ maps of the distribution of gold donor and
Wafer maps of gold acceptor density (a) and

leakage current (b).

acceptor density by means of thermally

stimulated capacitance measurements on n

+

p

and p

+n diodes, respectively. These distributions were shown to correlate well

with wafer maps of leakage current

measured at room temperature on the same

diodes. In the example, the gold acceptor

density varies from 1.9 to 7.6 x 10 13 cm

-3 and the leakage current, from 0.26 to 1.05

nA. The maps show five equal ranges; the

darkest symbol denotes the highest

range. 2 * 3 (R. Y. Koyama , x3625)

Isotope Shift of Sulfur in Silicon

The existence of an isotope shift in the

deep level of sulfur in silicon was discovered by measuring the energy levels

produced by the isotopes 32 S and 3I*S using

the isothermal transient capacitance

technique. Samples were prepared by

implantation of the appropriate isotope

into the p

+ region of junctions prepared

by boron diffusion into n-type substrates.

The implantation was shallow and served

only as an isotopically pure dopant source

for the diffusion of the sulfur impurities

to the junction regions. As a result,

implantation-related damage does not contribute to the response curves. The

energy levels of the isotope 32 S were

found to be in good agreement with the

energy levels of sulfur (95% 32 S) introduced by thermal diffusion; however,

the deep level of the isotope 34 S was

found to be 3% nearer to the conduction

*NBS-NRC Postdoctoral Fellow.

band. The difference (0.014 eV) between

the deep level of 32 S and that of 34 S is significantly greater than the uncertainty

in the determination of either level

(0.002 eV). The existence of an isotope

shift for the sulfur deep level is a strong indication that the electronic

energy levels of the sulfur deep level are coupled to the thermal vibrations of the

silicon lattice. 1 > 2 * 3 (D. R. Myers,* x3625, and W. E. Phillips, x3625)

X-Levels in Indium-Doped Silicon

For some samples of indium-doped silicon,

a model which includes an extraneous ac- ceptor level, the so-called X-level, which

lies nearer the valence-band edge than the

indium level, has consistently given better agreement with experimental Hall effect data than alternative models which do

not involve X-levels. In the analysis, one generally calculates the carrier density as a function of temperature from the

assumed model and compares this with the

inverse product of the Hall coefficient

and the electronic charge. Since the latter does not equal the carrier density

exactly, one cannot a priori infer that

the interpretation which yields the best

agreement is the correct one. As a first

step to resolve this issue, the existence

of X-levels in a crystal (in which their

presence was inferred from the analysis of

Hall data) was demonstrated by monitoring

the behavior of the Hall coefficient and

the apparent spectral response of X-levels

beyond the indium cut-off wavelength as oxygen donors were added to the crystal by

a series of 450°C anneals. The observed

behavior of both parameters with oxygen

donor addition was in almost perfect

agreement with that predicted by the X- level interpretation and completely at variance with that predicted by the only

plausible alternative not involving X- levels. By showing that X-levels must be

invoked to explain the behavior, the Hall

analysis was shown to be correct. It can therefore be inferred that the assumptions

made in the analysis are appropriate for

interpreting Hall effect data on indium5
doped s i 1 i con

can be used to are present or

and that Hall effect data

determine whether X-levels

absent

.

1 (R. D. Larrabee, x3&25)

Hall Effect Analysis Program

A listing of a FORTRAN computer program

developed for evaluating the temperature

dependence of resistivity, carrier

density, and mobility of silicon is now available on request. The program has

been documented by thorough annotation

with comment statements and examples.

This program was most recently utilized in the study of X-levels in indium-doped

silicon. 1 ’ 2 (R. D. Larrabee, x3625)

Electrical Alignment Test Structure

Results of the evaluation of a potentiometric electrical alignment test structure, fabricated with 6-pm-mi nimum1 i ne-width design rules, were reported at

the 1977 International Electron Devices

Meeting. The structure can be

incorporated in appropriate masks to enable direct electrical determination of

the registration between diffusion and contact window mask levels and between contact window and metallization mask

levels. The results showed that the test structure can resolve misregistration of

the order of 0.1 pm. This resolution is

similar to that which can be obtained with

advanced visual alignment test structures.

Since the electrical data can be acquired

and analyzed in about one-hundredth of the

time required to collect data from a visual structure, it is possible to make

complete wafer maps of the misalignment.

These maps can be analyzed to extract

translational, rotational, and processinduced misalignment. The electrical

alignment test structure can be . combined

with the cross-bridge sheet resistor to provide, in a compact, 12-pad structure,

means for determining sheet resistance,

line width, and alignment.

I

D ir r A 1 1

Scanning Acoustic Microscopy

Surface and subsurface defects in semicon-.

ductor device structures can be viewed'

6
with high-resolution scanning acoustic microscopy. The understanding of acoustic

reflections from smooth single crystal

surfaces covered with thin dielectric or

metallic layers, as found in such structures, was advanced at both Stanford and

Hughes. A rigid reflector model provided

;a qualitative explanation of the phase

reversals observed as- the lens-to-specimen

, distance is varied. However, this model

does not account for the dependence of the

response on the elastic properties of the

Imaterials. With an elastic reflector

model it is possible to estimate the

thickness of such layers. The first of

three publications on the analysis of

acoustic images appeared in the 15 December 1977 issue of Applied Physios

Letters . 1 (R. I. Scace,* x3625)

Third Pacemaker Workshop

The third in a continuing series of workshops on reliability technology for cardiac pacemakers held at NBS-Ga i thersburg on

October 1 9-20 , 1977, attracted 157 representatives of pacemaker manufacturers;

battery manufacturers; and suppliers of

materials, components, and services to the

pacemaker community. The workshop provided a stimulating atmosphere to discuss

the following topics: procurement and

assurance of high reliability electronic

components and systems; battery evaluation, characterization, and quality control; moisture measurement problems; and

materials and assembly processes. A

report on the workshop is being prepared.

Reports of the first two workshops were

published as NBS Special Publications 400-

28 and **00-42. 2 (H. A. Schafft, x3625)

Future Events . . .

Stability of Thin Film Solar Cells and

Materials —This workshop, being conducted

by NBS in cooperation with the Division of

Solar Technology, Department of Energy, is intended to provide a broad-based forum

for the discussion of reliability problems

which might arise in connection with the

manufacture and deployment of solar power

conversion systems based on thin film

photovoltaic cells. The workshop is scheduled to be held at NBS-Ga i thersburg

on May 1-3, 1978. (D. E. Sawyer, x3621)

Carrier Lifetime and Related Device

Parameters - ASTM Committee F-l on Electronics is planning this symposium to be held in San Diego on February 15 and

16, 1979, in conjunction with its regular

winter meeting. Emphasis will be on the areas of lifetime-related requirements and

problems in various device technologies,

interactions between lifetime and

microdefects, and methods and equipment

for measuring lifetime. Proceedings of

the symposium, to be chaired by R. D. Westbrook of Oak Ridge, will be published

by ASTM. (W. M. Bui 1 is, x3786)

New Projects . . .

Spreading Resistance Calibration Procedures — Work on development of procedures

for preparing specimen surfaces for

spreading resistance calibrations and

measurements is being extended to the case

of high-resistivity n-type silicon typical

of that used to fabricate thyristors.

Surfaces of such specimens have generally

been found to be unstable and very

sensitive to preparation procedures and to the specific nature of the probesemiconductor contact. Procedures capable

of yielding reliable calibration of n- type

surfaces while not adding problems when

measuring p- type regions also found in thyristor structures are being sought. 3 (J. R. Ehrstein, x3625)

SEM Depth-Dose study — The increasing use

of electron beam instruments for processing and testing semiconductor devices

makes it very desirable to have accurate

data for the electron penetration and the

absorbed radiation dose in various layers

of the device. The scanning electron microscope (SEM) is being used to make mea- surements of electron penetration and ab-

• : NBS Contact. sorption in a wide variety of materials of
interest to the semiconductor industry.

This depth-dose study is projected as an updating and extension of the results of

Everhart and Hoff. 2 (W. J. Keery, x3625,

and P. Roitman,* x3625)

Electrical Testing of Complex ICs — The

difficulties of testing complex integrated

circuits (ICs) are many and well-known. A review of testing and reliability problems

that affect the manufacturers and consumers of digital integrated circuits

was undertaken to determine whether a project in this area could be fruitfully

undertaken. Initial emphasis is being

placed on the testing of large scale

integrated (LSI) memory devices as they

exhibit many of the failure modes found in other complex devices. 2(T. F. Leedy, x3621)

Characterization of Reverse-Bias Second

Breakdown — Work was initiated to study

the characterization of power transistors

under reverse-bias operation. A circuit

has been designed and constructed which

removes power from the device under test within about kO ns after the occurrence of

reverse-bias second breakdown. The

circuit can apply over 1000 V and up to 1*0 A to the device under test. It has been

designed so that the forward on-time and

base drive as well as reverse base drive

(constant current or constant voltage

source) are variable over a wide range. 2 (D. W. Berning, x3621)

Solar Cell Measurement Techniques — This new program combines development of innovative solar cell measurement techniques

with activities designed to support the

broader objectives of the photovoltaic

plan of the Department of Energy. In the

initial phases, an analysis of a proposed

technique for determining solar cell

"emitter" sheet resistance by nondamaging

laser scanning has been carried to the

point of achieving closed-form expressions

relating the quantities of interest. In addition, the laser scanner is being

modified so that one may study the pointby-point spatial behavior of concentrator

*NBS-NRC Postdoctoral Fellow.

cells, and techniques are being,

investigated to allow cells to be biased

at arbitrary, but uniform and controlled,

light levels while being scanned. 4 (D. E. Sawyer, x3621)

f Work in Progress . . .

Mobility measurements on degenerate borondoped silicon specimens, being made as part of the reevaluation of the

resistivity-dopant density relations in silicon now nearing completion, indicate

that the hole mobility does not saturate

at a value as large as that previously

assumed. 1 (w. R. Thurber, x3625)

An improved version of the local slope

algorithm for analysis of spreading

resistance profiles has been written, but

discrepancies between implanted profiles

obtained using this algorithm and profiles

calculated from LSS theory remain. 1 (J. H. Albers, x3625)

J) Tests continued of the particle impact

noise detection (PIND) method for

screening microcircuit packages for the

presence of loose particles using

specially seeded packages. The results

provide further evidence that the tendency

for a small particle to lock up in T0-18

devices is enhanced by higher acceleration levels at lower frequencies, but

little or no correlation of lock-up

behavior with frequency or acceleration

level was seen on T0-5 and flatpack

devices. 6 (P. S. Lederer, x3821)

{• Work resumed on development of the rapid

gas cycling technique for the measurement

of gross leaks. This method minimizes the

rapid depletion of the gas from the

package interior that takes place with

large leaks (the factor which limits the range of currently used tracer gas leak

tests) by reducing the delay time between

pressurization and detection. It also

provides controlled environmental conditions so that a quantitative relationship

between true and measured leak values can

be obtained. 1 (S. Ruthberg, x3621)

8
Recent Publications . . .

Blackburn, D. L. , and Rubin, S. , A Non- destructive Method for the Determination

of Forward-Biased Safe-Operating-Area

Limits for Power Transistors, PESO '77 Record, IEEE Power Electronics

Specialists Conference 1 977 > Palo Alto,

CA, June 14-16 1977, pp. 1 7~22

.

: Galloway, K. F. , and Roitman, P. , Some Aspects of Using a Scanning Electron

Microscope for Total Dose Testing, NBSIR

77-1235 (Sept. 1977).

Rubin, S., and Blackburn, D. L. , A Test

Unit for the Nondestructive Determination

of Forward-Biased Safe-Operating-Area

Limits for Power Transistors, Conference

Record, IEEE IAS Annual Meeting, Los Angeles, CA, Oct. 3-6 , 1977, PP- 666-673-

Ruthberg, S., Neff, G. R. , and Martin, B.

D. , Radioisotope Hermetic Test Precision,

Proc. 1977 International Microelectronics

Symposium, Baltimore, MD, Oct. 24-26,

1977, PP- 131-137-

l*Kompfner, R. , and Quate, C. F. , Acoustic

Radiation as Used for Microscopy, Physics

\ in Technology 8_, 231-237 (Nov. 1977) • Novotny, D. B., Sensitometry of

Photoresists for Microelectronics,

Photographic Science and Engineering 2 1 , 351-355 (Nov. /Dec. 1977).

Russell, T. J., Leedy, T. F. , and Mattis,

R. L. , A Comparison of Electrical and Visual Alignment Test Structures for Evaluating Photomask Alignment in Integrated

Circuit Manufacturing, Technical Digest,

International Electron Devices Meeting,

Washington, DC, Dec. 5"7, 1977, PP- 7AL

7F - *Ham, W. E. , Intrachip and Spatial Parametric Integrity — An Important Part of 1C Process Characterization, Technical

Digest, International Electron Devices

Meeting, Washington, DC, Dec. 5~7, 1977,

pp. 406-1*09. *Kuczer, P. , Hook, H. 0., and Goodman, A.

M. , Semiconductor Measurement Technology : A Versatile High-Voltage Bias Supply for

Extended Range MIS C ( V ) and G(V) Measurements, NBS Spec. Publ. 400-41 (Dec.

1977).

Mattis, R. L. , and Buehler, M. G. , A New

!

Method for Calculating Background Dopant

Density from p-n Junction CapacitanceVoltage Measurements, J. Electrochem.

Soc. 224, 1918-1923 (Dec. 1977).

Galloway, K. F. , and Roitman, P.,

Important Considerations for SEM Total Dose Testing, IEEE Trans. Nuclear Science

NS-24 , 2066-2070 (Dec. 1977).

Harman, G. G., and Albers, J. H., The

Ultrasonic Welding Mechanism as Applied

to Aluminum- and Gold-Wire Bonding on Microelectronics, IEEE Trans. Parts,

Hybrids , and Packaging PHP-13, 406-412

(Dec. 1977).

Buehler, M. G., Dopant Profiles Determined

from Enhancement Mode M0SFET D-C Measurements, Appl. Phys. Letters 31 , 848-850 (15 Dec. 1977).

*Atalar, A., Quate, C. F., and Wickramasinghe, H. K. , Phase Imaging in Reflection with the Acoustic Microscope, Appl.

Phys. Letters 3J_, 791-793 (15 Dec. 1977).

*Weglein, R. D. , and Wilson, R. G., Image

Resolution of the Scanning Acoustic

Microscope, Appl. Phys. Letters 3J_, 793“

796 (15 Dec. 1977).

Mayo, S., and Evans, W. H., Thermodynamic

Considerations in the Use of Polysilicon

Oxidation Tubes for Clean Si0 2 Films

Preparation, J. Electrochem. Soc. 1 25 , 106-110 (Jan. 1978)

.

Mayo, S., Koyama , R. Y., and Leedy, T. F.

,

Control of Mobile Ion Contamination in Oxidation Ambients for M0S Device

Processing, NBSIR 77“ 1 404 (Jan. 1978).

Swyt, D. A., Design of a Pattern on a Photomask-Like Physical Standard for

Evaluation and Calibration of LinewidthMeasuring Systems, Solid State Technology

21 (1), 35-42 (Jan. 1978).

*Atalar, A., An Angular Spectrum Approach

to Contrast in Reflection Acoustic

Microscopy, J. Appl. Phys.

Blackburn, D. L. , Photovoltaic Technique

for Measuring Resistivity Variations of

High Resistivity Silicon Slices, NBS J. Res

.

Buehler, M. G., and Thurber, W. R. , An Experimental Study of Various Cross Sheet

9
Resistor Test Structures, J. dectrochem.

Soc. Buehler, M. G., Thurber, W. R. , and Grant,

S. 0., Bridge and van der Pauw Sheet

Resistors for Characterizing the Line

Width of Conducting Layers,. J. Electrochem. Soa. Buehler , M. G. , Microelectronic Test Patterns for Use in Procuring Custom and

Highly Reproducible Integrated Circuits,

Proc. Symposium on Utilization of LSICs

in Hilitary Systems , Arlington, V A, Aug.

9-11, 1377-

Bull is, W. M. , The NBS Semiconductor

Technology Program, Proa. Symposium on Utilization of LSICs in Military Systems , Arlington, VA, Aug. 9“11» 1977- •-Christou, A., Semiconductor Measurement

Technology : Automated Scanning Low- Energy Electron Probe (ASLEEP) for

Semiconductor Wafer Diagnostics, NBS Spec. Pub 1 . 400-30.

Galloway, K. F. , and Mayo, S., Radiation

Dose at the Silicon-Sapphire Interface

Due to Electron-Beam Aluminization, J. Appl. Phys

.

Galloway, K. F., and Mayo, S., On the

Compatibility of X-Ray Lithography and

SOS Device Fabrication, IEEE Trans. Electron Devices

.

*Jamba, D. M. , Secondary Particle

Collection in Ion Implantation Dose Measurement, Rev. Sci. Instrum.

Koyama , R. Y. , Blackburn, D. L. , and Oet tinger, F. F. , Measurement Techniques for

High Power Semiconductors and Devices,

Proc. EPRI Workshop on Light Fired Thyristors , Palo Alto, CA , Oct. 10-12, 1977. Koyama, R. Y. , Detection of Deep Levels in High Power Semiconductor Materials and

Devices, NBS J. Res. Koyama, R. Y. , Phillips, W. E. , Myers, D.

R. , Liu, Y. M., and Dietrich, H. B., The

Energy Levels and the Defect Signature of

Sulfur-Implanted Silicon by ITCAP and TSC

Measurements, Solid-State Electronics.

*Li ; s, S. , The Dopant Density and

Temperature Dependence of Hole Mobility

and Resistivity in Boron-Doped Silicon,

Solid-State Electronics.

Novotny, D. 3., and Ciarlo, D. R. , Semiconductor Measurement Technology. Auto-

•••Reports of Contract Research.

mated Photomask Inspection, NBS Spec.

S . , Th» Al/SiO

Publ . 400-46 and Solid State Technology

*Strausser, Y. E. , Scheibner, E. J., anc' Johannessen, J. S., Observations of A1 2 0 and Free Si in the Interface Between A Films and Si0 2 , Thin Solid Films.

*Strausser, Y. E., and Majumder , K. Chemical Structure of the

Interface, J. Vac. Sci. Tech.

Thurber, W. R. , and Carpenter,

Boron Determination in Silicon

Nuclear Track Technique, J. Electrochem

Soc

.

|

j

Thurber, W. R. , and Buehler, M. G. Semiconductor Measurement Technologyl. Microelectronic Test Pattern NBS-4, NB Spec. Publ. 400-32.

B. S. by t hi

Scheduled Talks . . .

IEEE Electronic Components Conferenc

Anaheim, California, April 25, 1978:

Harman, G. G. , and Cannon, C. A. , T Wire Bond Pull Test — How to Use It, He to Abuse It. .

j

Topical Conference on Character! zattci

Techniques for Semiconductor Materials ar* Devices, Electrochemical Society, Seattltj

Washington, May 21-26, 1978:

Blackburn, D. L., and Larrabee, R. D.- Automated Photovoltaic Technique fc Nondestructi vely Measuring Resistivil

Variations of High-Resistivity Silicc

Wafers.

Buehler, M. G. , Limitations and Applic;

tions of the D-C M0SFET Profile Methoc

Koyama, R. Y., Wafer Mapping { Electrically Active Devices.

Koyama, R. Y. , Techniques for Characte

izing Defects in Starting Sili con Wa f

e

Using TSM. Larrabee, R. D. , Interpretation of Ha Measurements.

Thurber, W. R. , Mattis, R. L., and Li Y. M. , Resistivity-Dopant Density R lationship for Silicon.

SEMIC0N/WEST, 1978, San Mateo, Californi

May 25, 1978:

Bull is, W. M. , Government Programs on A vanced Technology and Manufacturi

Techniques: Comments on U.S.A., Japa

and Europe.
NBS-1 14A (REV. 7-73)

U.S. DEPT. OF COMM. BIBLIOGRAPHIC DATA

SHEET

1. PUBLICATION OR REPORT NO. NBSIR 78 -I 4^4

2. Gov’t Accession

No.

3. Recipient’s Accession No.

4. TITLE AND SUBTITLE 5. Publication Date March 1978 Semiconductor Technology Program — Progress Briefs 6. Performing Organization Code

7. AUTHOR(S)

W. M. Bullis

8. Performing Organ. Report No.

9. PERFORMING ORGANIZATION NAME AND ADDRESS NATIONAL BUREAU OF STANDARDS DEPARTMENT OF COMMERCE

WASHINGTON, D.C. 20234 and various contractor facilities

10. Project/Task/Work Unit No.

11. Contract/Grant No.

See item 15.

12. Sponsoring Organization Name and Complete Address (Street, City, State, ZIP

)

NBS - Washington, DC 2023** NASA-GSFC , Greenbelt, MD 20770

ARPA - Arlington, VA 22209

DNA - Washington, DC 20305

Dept, of Energy - Washington, DC 205^5

13. Type of Report & P.eriod Covered interim

October-December 1977

14. Sponsoring Agency Code

15. SUPPLEMENTARY NOTES

ARPA Order 2397. Program Code 8 Y 10; DNA IACR0 78-807; Dept, of Energy, Interagency

Agreement EX-77-A01 -601 0 , Task Orders A021-EES and A05A-SE; NASA, Request No. S-391 93B

.

16. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant bibliography or literature survey, mention it here.)

This report provides information on the current status of NBS work in measurement

technology for semiconductor materials, process control, and devices. Results of

both in-house and contract research are covered. Highlighted activities include:

analysis of X-levels in indium-doped silicon; evaluation of an electrical alignment

test structure; correlations of gold density with leakage current in silicon; initial

application of resonance ionization spectroscopy; calibration of second-generation

line-width measurement artifacts; dopant profiling by dc measurements on MOSFETs; observation of an isotope shift in the sulfur deep level in silicon; development

of a nondestructive test for second breakdown; analysis of scanning acoustic microscopy; and the third pacemaker workshop. In addition, brief descriptions of new and

selected on-going projects are given. The report is not meant to be exhaustive;

contacts for obtaining further information are listed. Compilations of current publications, publications in preparation, and scheduled talks are also included.

17. KEY WORDS (six to twelve entries; alphabetical order; capitalize only the first letter of the first key word unless a proper name; separated by semicolons) Electronics; integrated circuits; measurement technology; microelectronics; semiconductor devices; semiconductor materials; semiconductor process control; silicon.

18. AVAILABILITY [j( Unlimited

|

1 For Official Distribution. Do Not Release to NTIS

C~2 °rd er From Sup. of Doc., U.S. Government Printing Office Washington, D.C. 20402, SD Cat. No. C I 3

V

Y

Order From National Technical Information Service (NTIS)

Springfield, Virginia 22151

1 1

19. SECURITY CLASS

(THIS REPORT)

UNCL ASSIFIED

20. SECURITY CLASS

(THIS PAGE)

UNCLASSIFIED

21. NO. OF PAGES

12

22. Price

$4.00

USCOMM-DC 29042- P 74
U S. DEPARTMENT OF COMMERCE, Juanita M. Kreps, Secretary

Dr. Sidney Harman, Under Secretary

Jordan J. Baruch, Assistant Secretary for Science and Technology

NATIONAL BUREAU OF STANDARDS, Ernest Ambler, Director