NBSIR 86-3464

Semiconductor Measurement

Technology: A Bibliography of

NBS Publications for the Years

1962-1985

U.S. DEPARTMENT OF COMMERCE

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

Semiconductor Electronics Division

Gaithersburg, MD 20899

October 1 986

U.S. DEPARTMENT OF COMMERCE

NATIONAL BUREAU OF STANDARDS

QC

100

.056

NO. 3^

1986

Edited by: Jane Walters

NBSIR 86-3464

SEMICONDUCTOR MEASUREMENT

TECHNOLOGY: A BIBLIOGRAPHY OF

NBS PUBLICATIONS FOR THE YEARS

1962-1985

Edited by: Jane Walters

U.S. DEPARTMENT OF COMMERCE

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

Semiconductor Electronics Division

Gaithersburg, MD 20899

October 1986

U.S. DEPARTMENT OF COMMERCE, Malcolm Baidrige, Secretary

NATIONAL BUREAU OF STANDARDS, Ernest Ambler, Director
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SEMICONDUCTOR MEASUREMENT TECHNOLOGY

Publications for the Years 1962-1985

Table of Contents

Page

Introduction 1

How to Obtain Listed Publications 2

Progress Briefs ...... . . 2

Videotapes 2

Progress Reports 3

Publications for the Year

1985 5

1984 9

1983 13

1982 17

1981 21

1980 26

1979 31

1978 36

1977 42

1976 47

1975 50

1974 52

1973 53

1972 54

1971 55

1970 56

1969 57

i i i
1968 58

1967 ............. 59

1966 . 60

1965 61

1964 62

1963 63

1962 64

Author Index 65

Topic Index 75

i V
SEMICONDUCTOR MEASUREMENT TECHNOLOGY;

LIST OF PUBLICATIONS — 1962-1985

Introduction

This list of publications contains reports of work performed at the

National Bureau of Standards (NBS) in the field of Semiconductor

Measurement Technology. The publications are grouped by author in

a given year, with the current year appearing first in the listing.

An index by topic area is provided. Each topic is followed by year

and reference number of the appropriate publication. For the reader’s

convenience, a list by author is also given.

Most of the publications listed herein resulted from work carried out

as part of the NBS Semiconductor Technology Program (STP) . This

Program serves to focus NBS research on improved measurement

technology for the use of the semiconductor device community in

specifying materials, equipment, and devices in national and

international commerce, and in monitoring and controlling device

fabrication and assembly. This research leads to carefully evaluated,

we I I -documented measurement methods, data, reference artifacts,

models and theory, and associated technology which when applied by the

industry are expected to contribute to higher yields, lower cost, and

higher reliability of semiconductor devices and to provide a basis for

controlled improvements in fabrication processes and device performance.

By providing a common basis for the purchase specifications of government

agencies, improved measurement technology also leads to greater economy

in government procurement. Financial support of the Program is provided

by a variety of Federal agencies; sponsorship is acknowledged in each

report.

The work of the Semiconductor Technology Program is carried out by

the Semiconductor Electronics Division (formerly the Semiconductor

Materials &, Processes and the Semiconductor Devices & Circuits

Divisions). Inquiries regarding the work of the Division should be

directed to Frank F. Oettinger, Division Chief, Room B344, Technology

Building, National Bureau of Standards, Gaithersburg, MD 20899.

The linewldth metrology work, formerly a part of the Semiconductor

Materials k Processes Division, is now part of the Precision

Engineering Division of the Center for Manufacturing Engineering,

although those publications that pertain to the semiconductor industry

still appear in this report. Detailed inquiries may be made to Robert

D. Larrabee, Group Leader, Linewldth Metrology, Room A331, Technology

Building, National Bureau of Standards, Gaithersburg, MD 20899.

1
How to Obtain Listed Publications

In most cases, reprints of articles in technical journals may be

obtained on request to the author or to the above address. Copies of

most NBS Technical Notes and Special Publications, NBS Interagency

Reports (NBSIR Series), NBS Grant-Contract Reports (NBS-GCR Series),

and other Government reports may be ordered through the National

Technical Information Service (NTIS) , U.S. Department of Commerce,

Springfield, VA 22161; or from the Government Printing Office

(GPO) , Superintendent of Documents, U.S. Government Printing

Office, Washington, DC 20402. Current price information may be

obtained from the NTIS Order Desk, (703) 487-4650 or from the GPO

Order and Inquiry Section, (202) 783-3238.

Progress Briefs

Progress Briefs have been issued in the NBSIR Series to describe the

work in the Semiconductor Technology Program on a periodic basis and

also to list new reports as they become available. The Center for

Electronics and Electrical Engineering (CEEE) continues to publish

such material in a Center-wide publication, CEEE Technical Progress

Bulletin. All individuals on the present Progress Briefs mailing list

will continue to receive issues in that series. Requests to have names placed on this list should be sent to: Mr. J. F. Mayo-Wells,

CEEE, Room B358, Metrology Building, National Bureau of Standards,

Gaithersburg, MD 20899, telephone: (301) 921-3357.

Videotapes

The videotape on Safe Operating Area Limits for Power Transistors,

by David L. Blackburn, continues to be available. Address requests to

the author. Room B310, Technology Building, for a copy of the tape and

NBS Special Publication 400-44 (issued September 1977), the videotape

script.

Also available is the videotape on Laser Scanning of Active

Semiconductor Devices. Contact David W. Berning, Room B310,

Technology Building, concerning a copy of the videotape and NBS

Special Publication 400-27 (issued February 1976).

2
PROGRESS REPORTS

Comprehensive progress reports covering the period July 1, 1968

through June 30, 1973 were published as NBS Technical Notes with the

title, Methods of Measurement for Semiconductor Materials, Process

Control, and Devices:

QUARTER ENDING NBS TECHNICAL NOTE DATE ISSUED

September 30, 1968 472 Dec 1968

December 31, 1968 475 Feb 1969

March 31, 1969 488 Jul 1969

June 30, 1969 495 Sep 1969

September 30, 1969 520 Mar 1970

December 31, 1969 527 May 1970

March 31, 1970 555 Sep 1970

June 30, 1970 560 Nov 1970

September 30, 1970 571 Apr 1971

December 31, 1970 592 Aug 1971

March 31, 1971 598 Oct 1971

June 30, 1971 702 Nov 1971

September 30, 1971 717 Apr 1972

December 31, 1971 727 Jun 1972

March 31, 1972 733 Sep 1972

June 30, 1972 743 Dec 1972

September 30, 1972 754 Mar 1973

December 31, 1972 773 Jun 1973

March 31, 1973 788 Aug 1973

June 30, 1973 806 Nov 1973

Between July 1, 1973 and September 30, 1977, comprehensive progress

reports were issued in the NBS Special Publication 400- subseries wi

the title. Semiconductor Measurement Technology:

QUARTER ENDING NBS SPECIAL PUBLICATION DATE ISSUED

September 30, 1973 400-1 Mar 1974

December 31, 1973 400-4 Nov 1974

March 31, 1974

June 30, 1974 400-8 Feb 1975

September 30, 1974 400-12 May 1975

December 31, 1974 400-17 Nov 1975

March 31, 1975 400-19 Apr 1976

June 30, 1975

September 30, 1975 400-25 Oct 1976

December 31, 1975

March 31, 1976 400-29 Apr 1977

June 30, 1976

September 30, 1976 400-36 Jul 1978

December 31, 1976 400-38 Nov 1979

March 31, 1977

June 30, 1977 400-45 Aug 1980

September 30, 1977
After October 1, 1977, brief progress reports were issued as NBSIRs

with the title, Semiconductor Technology Program, Progress Briefs:

QUARTER ENDING NBSIR DATE ISSUED

December 31, 1977 78-1444 Mar 1978

March 31, 1978 78-1444-2 Jul 1978

June 30, 1978 78-1444-3 Oct 1978

September 30, 1978 79-1591 Jan 1979

December 31, 1978 79-1591-2 Mar 1979

March 31, 1979 79-1591-3 Jun 1979

June 30, 1979 79-1591-4 Aug 1979

September 30, 1979 79-1591-5 Dec 1979

December 31, 1979 80-2006 Apr 1980

March 31, 1980 80-2006-2 Jun 1980

June 30, 1980 80-2006-3 Oct 1980

September 30, 1980 80-2006-4 Dec 1980

December 31, 1980 81-2230 Mar 1981

March 31, 1981 81-2230-2 Jul 1981

June 30, 1981 81-2230-3 Oct 1981

July 1, 1981

September 30, 1982

83-2636 Jan 1983

The Center for Electronics and Electrical Engineering Technical

Progress Bulletins (TPB) , which appeared after October 1, 1982,

contain abstracts of recent publications, and of those to be

published, covering work of the Semiconductor Technology Program as

well as that of the Signals and Systems Metrology Program,

QUARTER ENDING NBSIR DATE ISSUED

December 31, 1982 83-2719-3 Jul 1983

March 31, 1983 84-2857-1 Mar 1984

June 30, 1983 84-2857-2 Apr 1984

September 30, 1983 84-2857-3 Apr 1984

December 31, 1983 84-2857-4 Apr 1984

March 31, 1984 84-2877-1 May 1984

June 30, 1984 84-2877-2 Jul 1984

September 30, 1984 84-2877-3 Dec 1984

December 31, 1984 85-3181 Jun 1985

March 31, 1985 85-3181-2 Aug 1985

June 30, 1985 85-3181-3 Dec 1985

September 30, 1985 86-3344 Mar 1986

December 30, 1985 86-3344-2 Jun 1986

March 31, 1986 86-3449 Sep 1986
1935

Publications for the Year 1985

1. Albers, J., Monte Carlo Calculation of One- and Two-Dimensional Particle

and Damage Distributions for Ion-Implanted Dopants in Silicon, IEEE Trans.

Computer-Aided Design CAD-4, 374-383 (1985).

2. Albers, J., Monte Carlo Calculation of One- and Two-Dimensional Particle

and Damage Distributions for Ion-Implanted Dopants in Silicon, IEEE Trans.

Electron Devices ED-32, 1930-1939 (1985).

3. Albers, J., and Berkowitz, H. L., An Alternative Approach to the

Calculation of Four-Probe Resistances on Nonuniform Surfaces, J. Electrochem. Soc. 132, 2453-2456 (1985).

4. Baghdadi, A., Comments on "Precise Evaluation of Oxygen Measurements on CzSilicon Wafers", J. Electrochem. Soc. 132, 510 (1985).

5. Baghdadi, A., and Gladden, W. K., ADC Errors in Quantitative FT-IR

Spectroscopy, Proc. Soc. Photo-Optical & Instrum. Engrs., Fourier and

Computerized IR Spectroscopy 553, 207-209 (1985).

6. Bennett, H. S., Modeling CaAs/AIGaAs Devices: A Critical Review, IEEE

Circuits and Devices Magazine 1, 35-42 (1985).

7. Bennett, H. S., Band Structure and Density of States Changes for Doped

Gallium Arsenide, 0M85 Basic Properties of Optical Materials, Summaries of

Papers [Conf. May 7-9, Gaithersburg, MD] , NBS Spec. Publ. 697 (1985).

8. Bennett, H. S., Heavy Doping Effects on Bandgaps, Effective Intrinsic

Carrier Concentrations, and Carrier Mobilities and Lifetime, Solid State

Electronics 28, 193-200 (1985).

9. Bennett, H. S., and Fuoss, D. E., Improved Physics for Simulating

Submicron Bipolar Devices, IEEE Trans. Computer-Aided Design CAD-4, 513-

522 (1985).

10. Bennett, H. S., and Fuoss, D. E., Improved Physics for Simulating

Submicron Bipolar Devices, IEEE Trans. Electron Devices ED-32, 2069-2078

(1985) .

11. Blackburn, D. L., Turn-Off Failure of Power MOSFETs, Proc. 16th Annual

Power Electronics Specialists Conf., Toulouse, France, June 24-28, 1985,

pp. 429-435 (1985).

12. Chand I er-Horowi tz, D., El I ipsometric Metrology of Ultrathin Films: Dual

Angle of Incidence, Proc. Soc. Photo-Optical £ Instrum. Engrs., Micron and

Submicron Integrated Circuit Metrology 565, 93-97 (1985).

13. Ehrstein, J. R., Preparation and Certification of SRMs for Calibration of

Spreading Resistance Probes, NBS Spec. Publ. 260-93 (1985).

14. Forman, R. A., Bell, M. I., and Mayo, S., Rapid X-Ray Topographic

Examination of GaAs Crystals, Proc. Int. Symp. on Defect Recognition &

Image Processing in III-V Compounds, Montpellier, France, July 2-4, 1985,

5
pp. 55-62 (1985).

15. Forman, R. A., Bell, M. I., Myers, D. R., and Chand I er-Horowi tz, D., The

Raman Spectrum of Carbon in Silicon, Jap. J. Applied Physics 24, L848-L850

(1985) .

16. Forman, R. A., and Mayo, S., In Situ Alignment for X-Ray Topography, J. Appl. Crystallography 18, 106-109 (1985).

17. Galloway, K. F., Wilson, C. L., and Witte, L. C., Charge-Sheet Model

Fitting to Extract Radiation-Induced Oxide and Interface Charge, IEEE

Trans. Nucl. Sci. NS-32, 4461-4465 (1985).

18. Galloway, K. F., Wilson, C. L., and Witte, L. C., MOSFET Electrical

Parameter Extraction from Charge-Sheet Model Fitting, Proc. Sixth Biennial

University/Government/Industry Microelectronics Symposium, Auburn, AL,

June 11-13, 1985, pp. 77-81 (1985).

19. Imhoff, E. A., Bell, M. I., and Forman, R. A., Hot Photo I umi nescenco in

Beryllium-Doped Gallium Arsenide, Solid State Communications 54, 845-848

(1985)

20. Kirk, C. P., and Nyyssonen, D., Modeling the Optical Microscope Images of

Thick Layers for the Purpose of Linewidth Measurement, Proc. Soc. PhotoOptical Instrum. Engrs., Optical Mi cro I i thography IV 538, 179-187 (1985).

21. Lie, L., Pramanik, D., Saxena, A. N., Mazer, J. A., and Linholm, L. W.,

Contact Resistance of AI-lJ5Si-0.5J{Cu and AI/TiW/PtSi Metallization, Proc.

1985 IEEE VLSI Multilevel Interconnection Conf., Santa Clara, CA, June 24-

26, 1985, pp. 201-210 (1985).

22. Linholm, L. W., Cresswell, M. W., Coleman, E. S., and Partlow, W. D.,

Design, Fabrication, and Testing of an Interconnect Test Structure for

Evaluating VLSI Processes, 1985 Digest of Papers, Government Microcircuit

Applications Conf., Orlando, FL, Nov. 5-7, 1985, pp. 359-360 (1985).

23. Linholm, L. W., Mazer, J. A., and Galloway, K. F., Characterizing VLSI

Processes Using Test Structures, Digest of the DoD/NBS Conf. on Microelectronic Electromagnetic Susceptibility, Gaithersburg, MD, Mar. 12-

13, 1985, pp. 16-18 (1985).

24. Linholm, L. W., Yen, D., and Cresswell, M. W., Electrical Linewidth

Measurement in the Near- and Sub-Micron Linewidth Region, Proc. Third Int.

ECS Symp. on VLSI Sci. & Tech., Toronto, Ontario, May 12-17, 1985, pp. 299-

308 (1985).

25. Lowney, J. R., Band-Gap Narrowing in the Space-Charge Region of Heavily

Doped Silicon Diodes, Solid State Electronics 28, 187-191 (1985).

26. Marchiando, J. F., Roitman, P., and Albers, J., Verification of a Model

for Boron Diffusion in Silicon, IEEE Trans. Electron Devices ED-32, 2322-

2330 (1985).
1985

27. Mayo, S., Lowney, J. R., and Bell, M. I., Evidence of Lattice Relaxation

In Platinum-Doped Silicon, Proc. Materials Research Society Spring Meeting,

San Francisco, CA, April 1985, 46, pp. 297-306 (1985).

28. Mazer, J. A., Linholm, L. W., and Saxena, A. N., An Improved Test

Structure and Kel v i n-Measurement Method for the Determination of

Integrated Circuit Front Contact Resistance, J. Electrochem. Soc. 132, 440-

443 (1985)

29. Nyyssonen, D., Focused-Beam vs. Conventional Bright-Field Scanning

Microscopy for Integrated Circuit Metrology, Proc. Soc. Photo-Optical &

Instrum. Engrs., Micron and Submicron IC Metrology 565, 102-107 (1985).

30. Nyyssonen, D., A Practical Method for Edge Detection and Focusing for

Linewidth Measurements on Wafers, Proc. Soc. Photo-Optical Instrum. Engrs.,

Optical Microl 1 thography IV 538, 172-178 (1985).

31. Nyyssonen, D., and Postek, M. T., SEM-Based System for Calibration of

Linewidth SRMs for the IC Industry, Proc. Soc. Photo-Optical & Instrum.

Engrs., Micron and Submicron IC Metrology 565, 180-186 (1985).

32. Oettinger, F. F., Thermal Measurements of VLSI Packages - A Critical

Review, Abstracts of the lEEE/VLSI Packaging Workshop, Gaithersburg, MD,

September 9-11, 1985, pp. 26-29 (1985).

33. Radack, D. J., Yao, C. T., Linholm, L. W., Galloway, K. F., and Lin, H. C.,

Comparison of Microelectronic Test Structures for Propagation Delay

Measurements, Microelectronics Journal 16(6), 39-46 (1985).

34. Roenker, K. P., Harner, F. L., and Linholm, L. W., An NMOS Test Chip for

Instruction in Semiconductor Parameter Measurements, Proc. 6th Biennial

Un i v/Govt/Industry Microelectronics Symp., Auburn, AL, June 11-13, 1985,

pp. 100-105 (1985).

35. Roitman, P., Wilson, C. L., Blue, J. L., and Galloway, K. F., Measurements

for Accurate MOS Transistor Simulation, Proc. 3rd Int. Workshop, Physics

of Semiconductor Devices, Delhi, India, Nov. 1985, pp. 69-77 (1985).

36. Schafft, H. A., Standards for Electromigration Testing, Final Report, 1984

Wafer Reliability Assessment Workshop, Lake Tahoe, CA, Sept. 20-Oct. 3,

1984, pp. 91-106 (1985).

*

37. Schafft, H. A., Grant, T. C., Saxena, A. N., and Kao, C. Y.,

Electromigration and the Current-Density Dependence, Proc. 23d Annual

Inter. Reliability Physics Symp., Orlando, FL, Mar. 26-28, 1985, pp. 93-99

(1985) .

38. Stern, E. A., Ma, Y., and Bouldin, C. E., The Local Structure at Mn Sites

in Icosahedral Mn-AI Quasi crysta I s, Phys. Rev. Lett. 55(20), 2172-2175

(1985)

39. Thurber, W. R., and Lowney, J. R., Electrical Transport Properties of

Silicon. VLSI Handbook, Chapter 14 N. G. Einspruch Ed., pp. 177-190

(Academic Press, New York, NY, 1985).

7
1935

40. Wilson, C. L., Using Silicon Device Modeling Techniques for GaAs Devices,

Tech. Digest, 1985 Int. Electron Devices Meeting, Washington, DC, Dec. 1-4,

1985, pp. 78-81 (1985).

41. Wilson, C. L., and Blue, J. L., Accurate Current Calculation in TwoDimensional MOSFET Models, IEEE Trans. Computer-Aided Design CAD-4, 504-

512 (1985).

42. Wilson, C. L., and Blue, J. L., Accurate Current Calculation in TwoDimensional MOSFET Models, IEEE Trans. Electron Devices ED-32, 2060-2068

(1985)

43. Wilson, C. L., and Blue, J. L., Semiconductor Measurement Technology: MOSl

A Program for Two-Dimensional Analysis of Si MOSFETs, NBS Spec. Publ. 400-

77 (1985).

44. Wilson, C. L., Roitman, P., and Blue, J. L., High Accuracy Physical

Modeling of Submicron MOSFETs, IEEE Trans. Electron Devices ED-32, 1246-

1258 (1985).

45. Wilson, C. L., and Russell, T. J., Two-Dimensional Modeling of Channel HotElectron Effects in Silicon MOSFETs, Tech. Digest, 1985 Int. Electron

Devices Meeting, Washington, DC, Dec. 1-4, 1985, pp. 72-75 (1985).

46. Witte, L. C., CSFIT : A FORTRAN Program for Charge-Sheet Model Fitting of

MOSFET Data, NBSIR 85-3145 (1985).

47. Yen, D., Glendinning, W. B., and Linholm, L. W., An Electrical Test

Structure and Proximity Effects Measurement and Correction, J. Electrochem.

Soc. 132, 1726-1729 (1985).

8
1984

Publications for the Year 1984

1. Albers, J., Semiconductor Measurement Technology: TXYZ: A Program for

Semiconductor IC Thermal Analysis, NBS Spec. Publ. 400-76 (1984).

2. Albers, J., and Berkowitz, H. L., The Relation Between Two-Probe and FourProbe Resistances on Nonuniform Structures, J. Electrochem. Soc. 131, 392-

298 (1984).

3. Albers, J., Wilson, C. L., and Blue, J. L., The Effect of Bevel Angle and

Number of Points on Spreading Resistance Data Analysis, Ext. Abs. of the

Electrochemical Society, New Orleans, LA, Oct. 13-17, 1984, 84-2, p. 727

(1984)

4. Baghdadi, A., The Effects of Instrumental Artifacts on the Quantitative

Determination of Oxygen in Silicon by FTIR, ASTM Special Technical

Publication 850 (1984).

5. Bennett, H. S., Improved Device Physics for Calculating the Gain of

Bipolar Structures in Silicon. The Physics of Submicron Structures H. L.

Grubin, K. Hess, G. J. lafrate, and D. K. Ferry Eds., pp. 307-311 (Plenum

Press, New York, NY, 1984)

6. Bennett, H. S., Comparison of Theoretical Empirical Lifetimes for Minority

Carriers in Heavily Doped Silicon, Solid-State Electronics 27, 893-904

(1984) .

7. Bennett, H. S., and Wilson, C. L., Statistical Comparisons of Data on BandGap Narrowing in Heavily Doped Silicon: Electrical and Optical

Measurements, J. Appl. Phys. 55, 3582-3587 (1984).

8. Berkowitz, H. L., and Albers, J., Simplified Method for Calculating FourProbe Resistances on Nonuniform Surfaces, Ext. Abs. of the Electrochemical

Society, New Orleans, LA, Oct. 13-17, 1984, 84-2, p. 751 (1984).

9. Blackburn, D. L., and Berning, D. W., An Experimental Study of ReverseBias Second Breakdown. Power Transistors: Device Design and Applications

B. J. Baliga, and D. Y. Chen Eds., pp. 55-59 (IEEE Press, New York, NY,

1984)

10. Blue, J. L., and Wilson, C. L., Numerical Methods for Solving Coupled

Semiconductor Equations on a Minicomputer, Elliptic Problem Solvers II,

521-530 (1984).

11. Brodfuehrer, B. P., Galloway, K. F., and Wilson, C. L., Comparison of

Simple Approximations and Numerical Solutions for the Threshold Voltage of

Ion-Implanted Long-Channel MOSFETs, IEEE Trans. Education E-27, 3-6 (1984).

12. Candela, G. A., and Chand ler-Horowi tz, D., An Ellipsometry System for High

Accuracy Metrology of Thin Films, Proc. Soc. Photo-Optical Instrum. Engrs.,

Integrated Circuit Metrology II 480, 2-8 (1984).

9
13. Carver, G. P., and Wachnik, R. A., TERRY-2: A Test Chip for

Characterization of the Performance of Buried-Channel Charge-Coupled

Device (CCD) Imagers, NBSIR 84-2894 (1984).

14. Cassard, J. M., A Sensitivity Analysis of SPICE Parameters Using an ElevenStage Ring Oscillator, IEEE J. Solid State Circuits SC-19, 130-135 (1984).

15. Cassard, J. M., A Sensitivity Analysis of SPICE Parameters Using an ElevenStage Ring Oscillator, IEEE Trans. Electron Devices ED-31, 264-269 (1984).

16. Chang, T. T., The Calibration Methods and the Reference Materials in ESR

Spectroscopy, Mag. Resonance Rev. 9 (1-3), 65-124 (1984).

17. Dodge, M. J., Refractive Properties of Magnesium Fluoride, Appl. Opt.

23(12), 1980-1985 (1984).

18. Ehrstein, J. R., Downing, R. G., Stallard, B. R., Simons, D. S., and

Fleming, R. F., Comparison Depth Profiling of lOB in Silicon Using

Spreading Resistance Profiling, Secondary Ion Mass Spectrometry, and

Neutron Depth Profiling, ASTM Special Technical Publication 850 (1984).

19. Forman, R. A., Bell, M. I., Mayo, S., and Kahn, A. H., Effect of Spatial

Averaging on the Compositional Analysis of Crystals by Absorption

Spectroscopy, J. Appl. Phys. 55, 547-554 (1984).

20. Forman, R. A., and Kratz, H. D., A Simple Vacuum Pump Exhaust Filter, Rev.

Sci. Instrum. 55, 1503 (1984).

21. Gaitan, M., and Russell, T. J., Measurement of Radiation-Induced Interface

Traps Using MOSFETs, IEEE Trans. Nucl. Sci. NS-31, 1256-1260 (1984).

22. Galloway, K. F., Measurements for VLSI Models, Proc. 2nd Int. Workshop on the Physics of Semiconductor Devices, Delhi, India, Dec. 5-10, 1983, pp.

98-105 (1984).

23. Galloway, K. F., Gaitan, M., and Russell, T. J., A Simple Model for

Separating Interface and Oxide Charge Effects in MOS Device

Characteristics, IEEE Trans. Nucl. Sci. NS-31, 1497-1501 (1984).

24. Harman, G. G., The Microelectronic Bail-Bond Shear Test - A Critical

Review and Comprehensive Guide to Its Uses, Sol’id State Technology 27 (5),

186-197 (1984).

25. Hinkley, J. A., Adsorption of Polystyrene on Thermally Oxidized Silicon,

Polymer Preprints 25 (1), 178-179 (1984).

26. Hower, P. L., Blackburn, D. L., Oettinger, F. F., and Rubin, S., Stable

Hot Spots and Second Breakdown in Power Transistors. Power Transistors:

Device Design and Applications B. J. Baliga, and D. Y. Chen Eds., pp. 42-

54 (IEEE Press, New York, NY, 1984)

27. Kowalski, P., Lankford, W. F., and Schafft, H. A., Nondestructive

Measurement of Solar Cell Sheet Resistance Using a Laser Scanner, IEEE

Trans. Electron Devices ED-31, 566-570 (1984).
1934

28. Larrabee, R. D., Neutron Transmutation Doping of Semiconductor Materials,

Preface [Conference June 1-3, 1982], R. D. Larrabee, Ed., pp. vii-ix

(Plenum Press, New York, NY, 1984).

29. Lowney, J. R., and Geist, J., Comparison of Models of the Built-In

Electric Field in Silicon at High Donor Densities, J. Appl. Phys. 55, 3624-

3627 (1984).

30. Lowney, J. R., and Thurber, W. R., Evidence of Band-Gap Narrowing in the

Space-Charge Layer of Heavily Doped Silicon Diodes, Electronics Letters

20(3), 142-143 (1984).

31. Mazer, J. A., and Linholm, L. W., Comments on "Determining Specific

Contact Resistivity from Contact End Resistance Measurements", IEEE

Electron Devices Letters EDL-5, 347-348 (1984).

32. Moore, B. A., and Ruthberg, S., RADC/NBS Workshop - Moisture Measurement

and Control for Semiconductor Devices, III, NBSIR 84-2852 (1984).

33. Nyyssonen, D., Optical Linewidth Measurement on Patterned Metal Layers,

Proc. Soc. Photo-Optical Instrum. Engrs., Integrated Circuit Metrology II

480, 65-70 (1984).

34. Nyyssonen, D., A Review of NBS’s Activities in the Area of Linewidth

Measurement, Summary, SAMA Conference: Future Trends in Optical

Technologies in the Semiconductor Industry, May 23, 1983, Sunnyvale, CA,

pp. 1-7 (1984).

35. Oettlnger, F. F., Thermal Evaluation of VLSI Packages Using Test Chips - A

Critical Review, Solid State Technology 27 (2), 169-170 (1984).

36. Pande, K. P., and Seabaugh, A. C., Low Temperature Plasma-Enhanced Epitaxy

of GaAs, J. Electrochem. Soc. 131, 1357-1359 (1984).

37. Roenker, K. P., and Linholm, L. W., An NMOS Test Chip for a Course in

Semiconductor Parameter Measurements, NBSIR 84-2822 (1984).

38. Roitman, P., Albers, J., and Myers, D. R., An Investigation of the TwoDimensional Shape of Ion-Implanted Regions, J. Appl. Phys. 55, 4436-4443

(1984)

39. Schafft, H. A., Younkins, C. D., Grant, T. C., Kao, C. Y., and Saxena, A.

N., Effect of Passivation and Passivation Defects on Electromigration

Failure in Aluminum Metallization, 22d Annual Proceedings, Reliability

Physics 1984, Las Vegas, NV, April 3-5, 1984, pp. 250-255 (1984).

40. Seabaugh, A. C., Bell, M. I., Larrabee, R. D., and Oliver, J. D., HighFrequency Transient-Resistance Spectroscopy of Deep Levels in SemiInsulated GaAs. Semi -Insu I ati ng III-V Materials: Kah-neeta 1984 D. C.

Look, and J. S. Blakemore Eds., pp. 437-445 (Shiva Publishing, Ltd.,

Cheshire, England, 1984).

11
1984

41. Suehle. J. S., Beginning an Engineering Career at a Government Agency, Eng.

Horizons Spring, 152 (1984).

42. Suehle, J. S., Government Research, Engineering Horizons Fall, 226 (1984).

43. Suehle, J. S., Linholm, L. W., and Kafadar, K., Minimum Test Chip Sample

Size Selection for Characterizing Process Parameters, IEEE J. Solid State

Circuits SC-19, 122-129 (1984).

44. Suehle, J. S., Linholm, L. W., and Kafadar, K., Minimum Test Chip Sample

Size Selection for Characterizing Process Parameters, IEEE Trans. Electron

Devices ED-31, 257-264 (1984).

45. Thurber, W. R., Lowney, J. R., and Phillips, W. E., Measurement Techniques

for High Power Semiconductor Materials and Devices: Annual Report, January

1, 1982 to March 31, 1983, NBSIR 84-2838 (1984).

46. Wilson, C. L., and Blue, J. L., Two-Dimensional Modeling of N-Channel

MOSFETs Including Radiation-Induced Interface and Oxide Charge, IEEE Trans.

Nucl. Sci. NS-31, 1448-1452 (1984).

47. Wilson, C. L., Roitman, P., Marchiando, J. F., and Blue, J. L., Modeling

of the Process Sensitivity of Submicron Silicon MOSFETs, Ext. Abs. of the

Electrochemical Society, New Orleans, LA, Oct. 13-17, 1984 84-2, p. 709

(1984)

48. Yen, D., and Linholm, L. W., Using Linewidth Measurement Test Structures

to Evaluate Lithographic Processes and Equipment, Test t Measurement World,

46ff (1984).

12
Publications for the Year 1983

1. Albers, J., Investigation of the Relation Between the Correction Factor

and the Local Slope in Spreading Resistance, Ext. Abs. of the

Electrochemical Society, Washington, D.C., Oct. 9-14, 1983, 83-2, pp. 514-

515 (1983).

2. Albers, J., The Relation Between the Correction Factor and the Local Slope

in Spreading Resistance, J. Electrochem. Soc. 130, 2076-2080 (1983).

3. Albers, J., Roitman, P., and Wilson, C. L., Verification of Models for

Fabrication of Arsenic Source-Drains in VLSI MOSFET’s, IEEE Trans.

Electron Devices ED-30, 1453-1462 (1983).

4. Albers, J., Wilson, C. L., and Blue, J. L., Effect of Surface Beveling on Carrier Profiles, Ext. Abs. of the Electrochemical Society, San Francisco,

CA, May 8-13, 1983 83-1, pp. 641-642 (1983).

5. Baghdadi, A., Implicit Apodization of Interferograms in Fourier Transform

Spectroscopy, Appl. Spectrosc. 37(6), 520-523 (1983).

6. Baghdadi, A., Multiple-Reflection Corrections in Fourier Transform

Spectroscopy. Defects in Silicon 83-9, W. M. Bui I is, and L. C. Kimerling

Eds., pp. 293-302 (Electrochemical Society, Pennington, NJ, 1983).

7. Baghdadi, A., Multiple Reflection Corrections in Fourier Transform IR

Spectroscopy of Back Surface Damaged Wafers, Ext. Abs. of the

Electrochemical Society, San Francisco, CA, May 8-13, 1983, 83-1, pp. 460-

461 (1983).

8. Bay lies, W. A., Scace, R. I., and Vi eweg-Gutber I et, F. G., International

Standards for Semiconductor Materials, ASTM Standardization News II, 21-23

(1983)

9. Bennett, H. S., Inequality of Hole Mobilities in Heavily Doped n-Type and

p-Type Silicon, Ext. Abs. of the Electrochemical Society, Washington, DC,

Oct. 9-14, 1983, 83-2, pp. 542-543 (1983).

10. Bennett, H. S., Improved Concepts for Predicting the Electrical Behavior

of Bipolar Structures in Silicon, IEEE Trans. Electron Devices ED-30, 920-

927 (1983)

11. Bennett, H. S., Hole and Electron Mobilities in Heavily Doped Silicon:

Comparison of Theory and Experiment, Solid-State Electronics 26, 1157-1166

(1983)

12. Berkowitz, H. L., and Albers, J., The Relation Between Two-Probe and FourProbe Resistances on Nonuniform Structures, Ext. Abs. of the

Electrochemical Society, San Francisco, CA, May 8-13, 1983, 83-1, pp. 622-

623 (1983)

13. Blackburn, D. L., Benedetto, J. M., and Galloway, K. F., The Effect of

Ionizing Radiation on the Breakdown Voltage of Power MOSFETs, IEEE Trans.

Nucl. Sci. NS-30, 4116-4121 (1983).
14. Blue, J. L., and Wilson, C. L., Two-Dimensional Analysis of Semiconductor

Devices Using General-Purpose Interactive PDE Software, IEEE Trans.

Electron Devices ED-30, 1056-1070 (1983).

15. Blue, J. L., and Wilson, C. L., Two-Dimensional Analysis of Semiconductor

Devices Using General-Purpose Interactive PDE Software, SIAM J. Stat. Sci.

Comput. 4, 462-484 (1983).

16. Bunding, K. A., and Bell, M. I., Surface-Enhanced Raman Spectroscopy of

Pyridine Derivatives: Effects of Adsorption on Electronic Structure, Surf.

Sci. 118, 329-344 (1983).

17. Carver, G. P., Influence of Short-Channel Effects on Dopant Profiles

Obtained from the DC MOSFET Profile Method, IEEE Trans. Electron Devices

ED-30, 948-954 (1983).

18. Cassard, J. M., The Sensitivity of SPICE Simulations to Input Parameter

Variations, Proc. 1983 Custom Integrated Circuits Conf., Rochester, NY,

May 23-25, 1983, pp. 224-228 (1983).

19. Chand I er-Horowi tz, D., and Candela, G. A., On the Accuracy of

El I ipsometric Thickness Determinations for Very Thin Films, J. de Physique

44, ClO-23 - ClO-26 (1983)

20. Chen, D. Y., Lee, F. C., Blackburn, D. L., and Berning, D. W., ReverseBias Second Breakdown of High Power Darlington Transistors, IEEE Trans.

Aero. Elec. Sys. AES-19, 840-847 (1983).

21. Chen, D. Y., Lee, F. C., Blackburn, D. L., and Berning, D. W., ReverseBias Second Breakdown of High Power Darlington Transistors, Proc. 6th Int.

Power Conversion Conf., Orlando, FL, April 19-21, 1983, pp. 15-25 (1983).

22. Forman, R. A., Bell, M. I., Baghdadi, A., and Mayo, S., Effect of

Striations on the Compositional Analysis of Silicon Crystals. Defects in

Silicon 83-9 W. M. Bui I is, and L. C. Kimerling Eds., pp. 303-312

(Electrochemical Society, Pennington, NJ, 1983).

23. Forman, R. A., Bell, M. I., Baghdadi, A., and Mayo, S., The Effect of

Striatipns on the Compositional Analysis of Silicon Crystals, Ext. Abs. of

the’ El ectrochemi ca I Society San Francisco, CA, May 8-13, 1983, 83-1, pp.

463-464 (1983)

24. French, J. C., Galloway, K. F., and Scace, R. I., The Challenge of

Semiconductor Metrology, Proc. 1983 Mea. Sci. Conf., Palo Alto, CA, Jan.

19-20, 1983, pp. 171-188 (1983).

25. Harman, G. G., The Microelectronic Bail-Bond Shear Test - A Critical

Review and Comprehensive Guide to Its Use, Int. J. Hybrid Microelectronics

6, 127-141 (1983).

26. Hinkley, J. A., A Blister Test for Adhesion of Polymer Films to Si02, J. Adhesion 16, 115-126 (1983).
T983

27. Kahn, A. H., and Lowney, J. R., Multiple Scattering Theory of the Density

of States in Semiconductors, Solid State Commun. 46, 229-233 (1983).

28. Lantz, M. D., and Galloway, K. F., Total Dose Effects on Circuit Speed

Measurements, IEEE Trans. Nucl. Sci. NS-30, 4264-4269 (1983).

29. Larrabee, R. D., and Lowney, J. R., Measurement Techniques for HighResistivity Detector-Grade Silicon: Progress Report, July 1, 1982 to June

30, 1983, NBSIR 83-2792 (1983)

30. Lowney, J. R., and Bennett, H. S., Effect of Ionized Donors on the

Electron and Hole Densities of States in Silicon, J. Appl. Phys. 54, 1369-

1374 (1983).

31. Lowney, J. R., Larrabee, R, D., and Thurber, W. R., The Relationship

Between Deep-Level Measurements and Lifetime in Devices, Proc. 1983 Custom

Integrated Circuits Conference, Rochester, NY, May 23-25, 1983, pp. 152-

156 (1983)

32. Mattis, R. L., Semiconductor Measurement Technology: A FORTRAN Program for

Analysis of Data from Microelectronic Test Structures, NBS Spec. Publ.

400-75 (1983).

33. Mattis, R. L., and Zucker, R., Release Notes for STAT2 Version 1.31: An

Addendum to NBS Special Publication 400-75, NBSIR 83-2779 (1983).

34. Mazer, J. A., Linholm, L. W., Pramanik, D., Tsai, S., and Saxena, A. N.,

Comparison of Aluminum/Silicon Contact Resistance Values Obtained by

Contact Chain and Kelvin Measurement Structures, Ext. Abs. of the

Electrochemical Society, Washington, D.C., Oct. 9-14, 1983, 83-2, pp. 453-

454 (1983).

35. Mazer, J. A., Linholm, L. W., Pramanik, D., Tsai, S., and Saxena, A. N.,

Effects of Phosphorus Contact Doping and Sheet Resistance Variations on

A I /Si Interfacial Contact Resistance, Proc. 1983 Custom Integrated

Circuits Conf . , Rochester, NY, May 23-25, 1983, pp. 291-294 (1983).

36. Pande, K. P., and Seabaugh, A. C., Preparation of Device Quality GaAs

Using Plasma-Enhanced MO-CVD Technique. III-V Opto-EI ectron i cs Epitaxy

and Device Related Processes, 83-13, V. G. Keramidas, and S. Mahajan Eds.,

pp. 201-209 (Electrochemical Society, Pennington, NJ, 1983).

37. Phillips, W. E., and Lowney, J. R., Analysis of Nonexponential Transient

Capacitance in Silicon Diodes Heavily Doped with Platinum, J. Appl. Phys.

54, 2786-2791 (1983).

38. Phillips, W. E. , Thurber, W. R., and Lowney, J. R., Improved Analysis

Procedures for Deep-Level Measurements by Transient Capacitance. Defects

in Silicon 83-9 W. M. Bui I is, and L. C. Kimerling Eds., pp. 485-490

(Electrochemical Society, Pennington, NJ, 1983).

39. Proctor, S. J., and Linholm, L. W., A Direct Measurement of Interfacial

Contact Resistance, Proc. Flat-Plate Solar Array Research Forum

Photovoltaic Metallization Systems, Pine Mt., GA, March 16-18, 1983, pp.

15
19S3

99-102 (1983).

40. Proctor, S. J., Linholm, L. W., and Mazer, J. A., Direct Measurements of

Interfacial Contact Resistance, End Contact Resistance, and Interfacial

Contact Layer Uniformity, IEEE Trans. Electron Devices ED-30, 1535-1542

(1983)

41. Russell, T. J., Description of a CMOS Test Chip, NBS-39, NBSIR 83-2683

(1983)

42. Russell, T. J., Wilson, C. L., and Gaitan, M., Determination of the

Spatial Variation of Interface Trapped Charge Using Short-Channel MOSFETs,

IEEE Trans. Electron Devices ED-30, 1662-1671 (1983).

43. Suehle, J. S., Linholm, L. W., and Kafadar, K., A Method for Selecting a Minimum Test Chip Sample Size to Characterize Microelectronic Process

Parameters, Proc. 1983 Custom Integrated Circuits Conf., Rochester, NY,

May 23-25, 1983, pp. 308-312 (1983).

44. Yen, D., Linholm, L. W., Glendinning, W. B., Bass, J. F., and Cheville, D.

Eo, An Electrical Measurement Technique for Estimating Proximity Effects

in Electron-Beam Lithography, Ext. Abs. of the Electrochemical Society,

Washington, D.C., Oct. 9-14, 1983, 83-2, pp. 333-334 (1983).

45. Zimmerman, D. D., and Schafft, H. A., VLSI Package Reliability Workshop

Report, 21st Annual Proceedings, Reliability Physics 1983, Phoenix, AZ,

April 5-7, 1983, pp. 320-323 (1983).

16
1982

Publications for the Year 1982

1. Albers, J., Spreading Resistance Probe-Spacing Experiment Simulations:

Effects of Probe-Current Density and Layer Thickness, J. Electrochem. Soc.

129, 2788-2795 (1982)

2. Albers, J., Probe-Spacing Experiment Simulation and the Relation Between

Spreading Resistance and Sheet Resistance, J. Electrochem. Soc. 129, 599-

605 (1982).

3. Blackburn, D. L., and Berning, D. W., Power MOSFET Temperature

Measurements, PESC '82 Record, IEEE Power Electronics Specialists

Conference 1982, Cambridge, MA, June 14-17, 1982, pp. 400-407 (1982).

4. Blackburn, D. L., Berning, D. W., Benedetto, J. M., and Galloway, K. F.,

Ionizing Radiation Effects on Power MOSFETs During High Speed Switching,

IEEE Trans. Nucl. Sci . NS-29, 1555-1558 (1982).

5. Bui I is, W. M., and Nyyssonen, D., Optical Linewidth Measurements on Photomasks and Wafers, Chapter 7. VLSI Electronics: Microstructure

Science Semiconductor Microlithography, Vol. 3, N. G. Einspruch Ed., pp. 119-

126 (Academic Press, New York, NY, 1982).

6. Carver, G. P., Mattis, R. L., and Buehler, M. G., Design Considerations

for the Cross-Bridge Sheet Resistor, NBSIR 82-2548 (1982).

7. Chand I er-Horowi tz, D., El I ipsometric Accuracy and the Principal Angle of

Incidence, Proc. Soc. Photo-Optical Instrum. Engrs., Integrated Circuit

Metrology 342, 121-130 (1982).

8. Chand I er-Horowi tz, D., and Candela, G. A., Principal Angle Spectroscopic

Ellipsometry Utilizing a Rotating Analyzer, Appl. Optics 21, 2972-2977

(1982)

9. Cohen, E. C., and Ruthberg, S., Semiconductor Measurement Technology:

NBS/RADC Workshop, Moisture Measurement Technology for Hermetic

Semiconductor Devices, II, NBS Spec. Publ. 400-72 (1982).

10. Croarkin, M. C., and Varner, R. N., Measurement Assurance for Dimensional

Measurements on Integrated-Circuit Photomasks, NBS Tech. Note 1164 (1982).

11. Harman, G. G., Semiconductor Measurement Technology: The Use of Acoustic

Emission to Determine the Integrity of Large Kovar Glass-Sealed

Microelectronic Packages, NBS Spec. Publ. 400-70 (1982).

12. Harman, G. G., How the "New" Technology Has Changed and Increased

Classical Package-Related Failure Modes, Ext. Abs. VLSI Packaging Workshop

(NBS/IEEE/CHMT) , Gaithersburg, MD, Sept. 13-14, 1982, pp. 70-72 (1982).

13. Harman, G. G., Acoustic-Emission-Monitored Tests for TAB Inner Lead Bond

Quality, IEEE Trans. Components, Hybrids, and Manufacturing Technology

CHMT-5, 445-453 (1982).

17
1982

14. Harman, G. G., Acoustic-Emission-Monitored Tests for TAB Inner Lead Bond

Quality, Proc. 32nd Electronic Components Conf., San Diego, CA, May 10-12,

1982, pp. 268-276 (1982).

15. Harman, G. G., and Harmison, K. A., The Assessment of Hybrid Package GlassMetal Seal Reliability Using Acoustic-Emission Measurement Techniques, Int.

J. Hybrid Microelectronics 5, 248-259 (1982).

16. Hogan, S., and Schafft, H. A., Workshop Summary [of the Commercial

Photovol talcs Measurements Workshop, Vail, CO, July 17-19, 1981], Solar

Cells 7 (1-2), 3-22 (1982)

17. Jerke, J. M., Croarkin, M. C., and Varner, R. N., Semiconductor

Measurement Technology: Inter laboratory Study on Linewidth Measurements

for Anti ref lecti ve Chromium Photomasks, NBS Spec. Publ. 400-74 (1982).

18. Jerke, J. M., and Wendell, C. E., Use of the National Bureau of Standards

(NBS) Anti ref I ecti ve (AR) -Chromi urn Optical Linewidth Standard for

Measurements on Other Types of Chromium Photomasks, Proc. Soc . PhotoOptical Instrum. Engrs., Integrated Circuit Metrology 342, 15-26 (1982).

19. Johnson, N. M., DLTS Analysis of Residual Damage in Low-Dose Ion-Implanted

Silicon, NBS-GCR 81-364 (1982).

20. Kahn, A. H., and Lowney, J. R., Effect of Impurity Pairs on the

Disappearance of Impurity Levels in Silicon, J. AppI . Phys. 53, 454-456

(1982)

21. Lowney, J. R., The Effect of Bandgap Narrowing on Diffusion Processes in

Silicon. VLSI Science and Technology/1982, C. J. Del I ’Oca, and W. M.

Bui I is Eds., pp. 123-129 (Electrochemical Society, Pennington, NJ, 1982).

22. Lowney, J. R., and Bennett, H. S., Effect of Donor Impurities on the

Conduction and Valence Bands of Silicon, J. AppI. Phys. 53, 433-438 (1982).

23. Mattis, R. L., Till, L. J., and Frisch, R. C., A Computer Program for

Analysis of Data from Microelectronic Test Structures, NBSIR 82-2492

(1982)

24. Mayo, S., Lucatorto, T. B., and Luther, G. G., Laser Ablation and

Resonance Ionization Spectrometry for Trace Analysis of Solids, Anal. Chem.

54, 553-556 (1982).

25. Nyyssonen, D., Theory of Optical Edge Detection and Imaging of Thick

Layers, J. Opt. Soc. Am. 72, 1425-1436 (1982).

26. Nyyssonen, D., Calibration of Optical Systems for Linewidth Measurements

on Wafers, Opt. Eng. 21 (5), 882-887 (1982).

27. Nyyssonen, D., Laser Micrometrology for Integrated Circuits, Proc.

Inspection, Measurement, and Control Symp., ICALEO ’82, Boston, MA, Sept.

20-23, 1982, pp. 24-30 (1982).

IS
28. Nyyssonen, D., Design of an Optical Linewidth Standard Reference Material

for Wafers, Proc. Soc. Photo-Optical Instrum. Engrs., Integrated Circuit

Metrology 342, 27-34 (1982).

29. Oettinger, F. F., and Albers, J., Thermal Test Chips for VLSI Package

Evaluation, Ext. Abs., VLSI Packaging Workshop (NBS/IEEE/CHMT)

,

Gaithersburg, MD, Sept. 13-14, 1982, pp. 46-47 (1982).

30. Phillips, W. E. , Improved Thermometry for Deep-Level Measurements, J. Phys.

E 15, 499-501 (1982)

31. Proctor, S. J., and Linholm, L. W., A Microelectronic Test Structure for

Measuring Contact Resistance in Integrated Circuits, Ext. Abs. of the

Electrochemical Society 82-1, 372-373 (1982).

32. Proctor, S. J., and Linholm, L. W., A Direct Measurement of Interfacial

Contact Resistance, IEEE Electron Device Letters EDL-3, 294-296 (1982).

33. Russell, T. J., Production-Compatible Microelectronic Test Structures for

the Measurement of Interface State Density and Neutral Trap Density, NBSIR

81-2413 (1982).

34. Ruthberg, S., Semiconductor Measurement Technology: Graphical Solution for

the Helium Leak Detector and Radioisotope Methods of Hermetic Test, Master

Graphs and Instructions, NBS Spec. Publ. 400-73 (1982).

35. Ruthberg, S., Hermetic Testing of Large Hybrid Packages, Int. J. Hybrid

Microelectronics 5, 215-232 (1982).

36. Ruthberg, S., Leak Testing of Hermetically Sealed Electronic Components,

Proc. Qualtest I, ASNT, Pittsburgh, PA, Oct. 4-7, 1982, pp. 431-436 (1982).

37. Scace, R. I., The Semiconductor Equipment and Materials Institute

Specifications for Solar Cell Silicon, Solar Cells 7 (1-2), 77-78 (1982).

38. Schafft, H. A., Measurements for Commercial Photovol taics: A Status Report,

Solar Cells 7 (1-2), 23-46 (1982).

39. Stahibush, R. E., and Forman, R. A., Vibronic Spectrum of the U2

Isoelectronic Center in Si :In, J. Luminescence 26, 227-232 (1982).

40. Suehle, J. S., Linholm, L. W., and Marshall, G. M., Evaluation of a CMOS/SOS Process Using Process Validation Wafers, NBSIR 82-2514 (1982).

41. Thomas, D. B., An Approved Laboratory Program for Photovoltaic Reference

Cell Development, Solar. Cells 7 (1-2), 131-134 (1982).

42. Thomas, D. B., A Certification Program for Photovoltaic Modules, Solar

Colls 7 (1-2), 183-186 (1982).

43. Thurber, W. R., Forman, R. A., and Phillips, W. E., A Novel Method to

Detect Nonexponential Transients in Deep Level Transient Spectroscopy, J. Appl. Phys. 53, 7397-7400 (1982).
1982

44. Thurber, W. R., Phillips, W. E., and Larrabee, R. D., Measurement

Techniques for High Power Semiconductor Materials and Devices: Annual

Report, October 1, 1980 to December 31, 1981, NBSIR 82-2552 (1982)

45. Waksman, D., Solar Collector Certification Activities and Experiences,

Solar Cells 7 (1-2), 187-196 (1982).

4. 46. Wilson, C. L., and Blue, J. L., CSl: A Two-Dimensional Finite Element

Charge-Sheet Model of a Short-Channel MOS Transistor, NBSIR 82-2471 (1982)

47. Wilson, C. L., and Blue, J. L., Modeling of Ionizing Radiation Effects in

Short-Channel MOSFETs, IEEE Trans. Nucl. Sci. NS-29, 1676-1680 (1982).

48. Wilson, C. L., and Blue, J. L., Two-Dimensional Finite Element ChargeSheet Model of a Short-Channel MOS Transistor, Solid-State Electronics 25,

461-477 (1982).

49. Wilson, R. G., and Jamba, D. M., Semiconductor Measurement Technology:

Differential Capacitance-Voltage Profiling of Schottky Barrier Diodes for

Measuring Implanted Depth Distributions in Silicon, NBS Spec. PubI . 400-

71 (1982).

50. Wilson, R. G., and Weglein, R. D., Reflection Acoustic Microscopy, NBS-GCR

82-401 (1982).

51. Yen, D., Electrical Test Methods for Evaluating Lithographic Processes and

Equipment, Proc. Soc. Photo-Optical Instrum. Engrs., Integrated Circuit

Metrology 342, 73-81 (1982).

52. Yen, D., Linholm, L. W., and Buehler, M. G., A Cross-Bridge Test Structure

for Evaluating the Linewidth Uniformity of an Integrated Circuit

Lithography System, J. Electrochem. Soc. 129, 2313-2318 (1982).

20
Publications for the Year 1981

1. Baghdadi, A., and Forman, R. A., Tertiary Interf erograms in Fourier

Transform Spectroscopy, Appl. Spectrosc. 35(5), 473-475 (1981).

2. Bennett, H. S., Upper Limits for the Number of Bound States Associated

with the Yukawa Potential, J. Res. Natl. Bur. Standards 86, 503-508 (1981).

3. Bennett, H. S., and Lowney, J. R., Effect of Donor Impurities on the

Density of States near the Band Edge in Silicon, J. Appl. Phys. 52, 5633-

5642 (1981)

4. Berning, D. W., Use of Vacuum Tubes in Test Instrumentation for Measuring

Characteristics of Fast High-Voltage Semiconductor Devices, IEEE Trans.

Instrumentation and Measurement IM-30, 226-227 (1981).

5. Berning, D. W., and Blackburn, D. L., The Effect of Magnetic Package Leads

on the Measurement of Thermal Resistance of Semiconductor Devices, IEEE

Trans. Electron Devices ED-28, 609-611 (1981).

6. Blackburn, D. L., Power Transistor Switching Characterization, NBSIR 81-

2204 (1981).

7. Blackburn, D. L., Robbins, T. C., and Galloway, K. F., VDMOS Power

Transistor Drain-Source Resistance Radiation Dependence, IEEE Trans. Nucl.

Sci. NS-28, 4354-4359 (1981).

8. Blue, J. L., and Wilson, C. L., Calculating Eigenvalues and Eigenfunctions

Using an Interior Constraint, J. Computational Physics 44, 70-83 (1981).

9. Buehler, M. G., and Linholm, L. W., Toward a Standard Test Chip

Methodology for Reliable, Custom Integrated Circuits, Proc. 1981 Custom

Integrated Circuits Conf., Rochester, NY, May 11-13, 1981, pp. 142-146

(1981)

10. Buehler, M. G., and Linholm, L. W., The Role of Test Chips in Coordinating

Logic and Circuit Design and Layout Aids for VLSI, Proc. 2d Cal. Tech.

Conf. on VLSI, Pasadena, CA, Jan. 19-21, 1981, pp. 135-151 (1981).

11. Buehler, M. G., and Linholm, L. W., Role of Test Chips in Coordinating

Logic and Circuit Design and Layout Aids for VLSI, Solid State Technology

24, 68-74 (1981)

12. Buehler, M. G., and Perloff, D. S., Microelectronic Test Chips and

Associated Parametric Testers: Present and Future. Semiconductor

Silicon/1981, H. R. Huff, R. J. Kriegler, and Y. Takeishi Eds., pp. 859-

867 (Electrochemical Society, Pennington, NJ, 1981).

13. Bui I is, W. M., Advancement of Reliability, Processing and Automation for

Integrated Circuits with the National Bureau of Standards (ARPA/IC/NBS)

,

NBSIR 81-2224 (1981)

14. Bui I is, W. M., Integrated Circuit Metrology, EDN Magazine 26 (20), 120-

122ff (1981)
1981

15. Bui I is, W. M., and Ehrstein, J. R., Reference Materials and the

Semiconductor Industry, Solid State Technology 24(11), 56-63 (1981).

16. Bui I is, W. M., and Scace, R. I., The Department of Commerce and the Role

of Government Standards. VLSI Electronics, Microstructure Science, Vol.l,

N. G. Einspruch Ed., pp. 281-286 (Academic Press, New York, NY, 1981).

17. Candela, G. A., Galloway, K. F., Liu, Y. M., and Fine, J., Measurement of

the Interlayer Between Aluminum and Silicon Dioxide Using El 1 ipsometric,

Capacitance-Voltage and Auger Electron Spectroscopy Techniques, Thin Solid

Fi Ims 82, 183-193 (1981)

18. Carver, G. P., Development of Test Structures for Characterization of the

Fabrication and Performance of Radiation-Hardened Charge-Coupled Device

(CCD) Imagers: Annual Report, May 15, 1980 to May 14, 1981, NBSIR 81-2319

(1981)

19. Carver, G. P., and Cull ins, W. A., Semiconductor Measurement Technology: A

Manual Wafer Probe Station for an Integrated Circuit Test System, NBS Spec.

Publ. 400-68 (1981).

20. Carver, G. P., Mattis, R. L., and Buehler, M. G., Microelectronic Test

Patterns NBS-12 and NBS-24, NBSIR 81-2234 (1981) .

21. Ehrstein, J. R., and Seabaugh, A. C., Gallium Arsenide Materials

Characterization: Annual Report, October 12, 1978 to October 12, 1979,

NBSIR 81-2403 (1981)

22. Forman, R. A., Bell, M. I., and Myers, D. R., Comments on "Raman

Scattering from Boron-Implanted Laser Annealed Silicon", J. Appl. Phys. 52,

4337-4339 (1981).

23. Forman, R. A., Larrabee, R. D., Myers, D. R., Phillips, W. E., and Thurber,

W. R., Processing Effects on the Electrical and Optical Properties of

Sulfur-Related Defect Centers in Silicon and Similarities to the Oxygen

Donor. Defects in Semiconductors, J. Narayan and T. Y. Tan Eds., pp. 79-

84 (North Holland, NY, 1981).

24. Geist, J., and Lowney, J. R., Effect of Band-Gap Narrowing on the BuiltIn Electric Field in n-Type Silicon, J. Appl. Phys. 52, 1121-1123 (1981).

25. Harman, G. G., The Use of Acoustic Emission as a Test Method for

Electronic Interconnections and Joints, Proc. Int. Conf . Soft Soldering in

Electronics t Precision Mechanics, Munich, Germany, Nov. 11-12, 1981, pp.

104-110 (1981).

26. Helms, C. R., Schwarz, S. A., Spicer, W. E., and Taylor, N. J., Innovative

Measurement Technology for the Semiconductor Device Industry Based on Electron Spectroscopy, NBS-GCR 81-345 (1981).

27. Lankford, W. F., Kowalski, P., and Schafft, H. A., Laser Scanning

Measurements on Solar Cell Test Pattern NBS-22, NBSIR 81-2260 (1981).

22
28. Larrabee, R. D., Phillips, W. E., and Thurber, W. R., Measurement

Techniques for High Power Semiconductor Materials and Devices: Annual

Report, October 1, 1979 to September 30, 1980, NBSIR 81-2325 (1981)

29. Larrabee, R. D., Thurber, W. R., and Bui I is, W. M., Electrical Parameters

of Extrinsic Silicon, Circuits Manufacturing 21(5), 82-100 (1981).

30. Leedy, T. F., McLane, G. F., and Guenzer, G. C., Temperature Dependence of

Transient Electron Radiation Upset in TTL Circuits, IEEE Trans. Nucl. Sci.

NS-28, 4597-4605 (1981).

31. Lehovec, K., and Fedotowsky, A., Solar Cell Mathematical Analysis and

Computer Simulation, NBS-GCR 80-285 (1981).

32. Li, S. S., Conductivity Mobility, Hall Mobility, and Resistivity in n-Type

Silicon, NBS-GCR 81-334 (1981).

33. Lin, J. F., Li, S. S., Linares, L. C., and Teng, K. W., Theoretical

Analysis of Hall Factor and Hall Mobility in p-Type Silicon, Solid-State

Electronics 24, 827-833 (1981).

34. Linares, L. C., and Li, S. S., An Improved Model for Analyzing Hole

Mobility and Resistivity in p-Type Silicon Doped with Boron, Gallium, and

Indium, J. Electrochem. Soc. 128, 601-608 (1981).

35. Linholm, L. W., Semiconductor Measurement Technology: The Design, Testing,

and Analysis of a Comprehensive Test Pattern for Measuring CMOS/SOS

Process Performance and Control, NBS Spec. Publ. 400-66 (1981).

36. Linholm, L. W., Mattis, R. L., Frisch, R. C., and Reeve, C. P.,

Characterizing and Analyzing Critical Integrated Circuit Process

Parameters. Semiconductor Silicon/1981 H. R. Huff, R. J. Kriegler, and Y

Takeishi Eds., pp. 906-920 (Electrochemical Society, Pennington, NJ, 1981)

37. Lowney, J. R., Kahn, A. H., Blue, J. L., and Wilson, C. L., Disappearance

of Impurity Levels in Silicon and Germanium Due to Screening, J. Appl.

Phys. 52, 4075-4080 (1981).

38. McCarthy, D., Acevedo, J., and Herman, D., Advanced Planar Silicon Test

Structures, NBS-GCR 81-327 (1981)

39. Mitchell, M. A., and Linholm, L. W., Semiconductor Measurement Technology:

Test Patterns NBS-28 and NBS-28A: Random Fault Interconnect Step Coverage

and Other Structures, NBS Spec. Publ. 400-65 (1981).

40. Mitchell, M. A., Linholm, L. W., Russell, T. J., and Carver, G. P.,

Electrical Test Structures for Characterization and Control of

Microelectronics Processing. Proc. Microelectronics Measurement

Technology Seminar, San Jose, CA, March 17-18, pp. VI-l-VI-29

(Benwi I I Publishing Co., Boston, MA, 1981).

41. Myers, D. R., Comas, J., and Wilson, R. G., Effect of Silicon Dioxide

Surface-Layer Thickness on Boron Profiles for Directly Aligned Implants

into (100) Silicon, J. Appl. Phys. 52, 3357-3359 (1981).
1981

42. Novotny, D. B., Photoresist Sensitometry and Exposure Modeling, Solid

State Technology 24 (3), 83-88, (1981).

43. Peckerar, M. C., and Galloway, K. F., Informal Survey of Federal

Government Microelectronics Processing Facilities. Proc. 4th Biennial

Uni v/Industry/Govt Microelectronics Symp., Mississippi State Univ., May

1981, p. Ill (1981).

44. Roitman, P., Albers, J., Ehrstein, J. R., and Myers, D. R., Investigation

of the Two-Dimensional Shape of Ion-Implanted Regions, NBSIR 81-2398

(1981)

45. Ruthberg, S., Graphical Solution for the Back Pressurization Method of

Hermetic Test, IEEE Trans. Components, Hybrids, and Manufacturing Tech.

CHMT-4, 217-224 (1981).

46. Sawyer, D. E., Kessler, H. K., Russell, T. J., Lankford, W. F., and

Schafft, H. A., Measurement Techniques for Solar Cells, Annual Report,

December 15, 1978 to December 14, 1979, NBSIR 80-2181 (1981) .

47. Scace, R. I., Semiconductor Technology for the Non-Technologist, NBSIR 81-

2197 (1981).

48. Scace, R. I., The Semiconductor Equipment and Materials Institute

Specifications for Solar Cell Silicon, Proc. Commercial Photovol tales

Measurements Workshop, Vail, CO, July 17-19, 1981, pp. 107-108 (1981).

49. Schafft, H. A., Measurements for Commercial Photovol talcs: A Status Report,

Proc. Commercial Photovol talcs Measurements Workshop, Vail, CO, July 17-19,

1981, pp. 7-29 (1981).

50. Schafft, H. A., Ruthberg, S., and Cohen, E. C., Semiconductor Measurement

Technology: ARPA/NBS Workshop V. Moisture Measurement Technology for

Hermetic Semiconductor Devices, NBS Spec. Publ. 400-69 (1981).

51. Schwarz, S. A., Helms, C. R., Spicer, W. E., and Taylor, N. J.,

Semiconductor Measurement Technology: The Capabilities and Limitations of

Auger Sputter Profiling for Studies of Semiconductors, NBS Spec. Publ. 400-

67 (1981).

52. Thomas, D. B., A Certification Program for Photovoltaic Modules, Proc.

Commercial Photovoltaics Measurements Workshop, Vail, CO, July 17-19, 1981,

pp. 275-278 (1981).

53. Thomas, D. B., An Approved Laboratory Program for Photovoltaic Reference

Cell Development, Proc. Commercial Photovoltaics Measurements Workshop,

Vail, CO, July 17-19, 1981, pp. 201-204 (1981).

54. Thurber, W. R., Mattis, R. L., Liu, Y. M., and Filliben, J. J.,

Semiconductor Measurement Technology: The Relationship Between Resistivity

and Dopant Density for Phosphorus- and Boron-Doped Silicon, NBS Spec. Publ

400-64 (1981).

24
1981

55. Vasquez, R. P., Klein, J. D., Barton, J. J., and Grunthaner, F. J.,

Application of Maximum-Entropy Spectral Estimation to Deconvolution of XPS

Data, J. Electron. Spectrosc. 23, 63-81 (1981).

56. Waksman, D., Solar Collector Certification Activities and Experiences,

Proc. Commercial Photovo I ta i cs Measurements Workshop, Vail, CO, July 17-19,

1981, pp. 279-280 (1981).

57. Wilson, R. G., Measurement Technology for Critical Ion Implantation

Parameters, NBS-GCR 81-325 (1981)

58. Wilson, R. G., and Weglein, R. D., Reflection Acoustic Microscope

Measurement Technology, NBS-GCR 81-363 (1981).

25
1930

Publications for the Year 1980

1. Albers, J., Continuum Formulation of Spreading Resistance Correction

Factors, J. Electrochem. Soc. 127, 2259-2263 (1980).

2. Albers, J., Comparison of Spreading Resistance Correction Factor

Algorithms Using Model Data, Solid-State Electronics 23, 1197-1205 (1980).

3. Albers, J., and Novotny, D. B., Intensity Dependence of Photochemical

Reaction Rates for Photoresists, J. Electrochem. Soc. 127, 1400-1403

(1980)

4. Blackburn, D. L., and Berning, D. W., An Experimental Study of ReverseBias Second Breakdown, Tech. Digest, 1980 Int. Electron Devices Meeting,

Washington, D.C., Dec. 8-10, 1980, pp. 297-301 (1980).

5. Buehler, M. G., Effect of the Drain-Source Voltage on Dopant Profiles

Obtained from the d-c MOSFET Profile Method, IEEE Trans. Electron Devices

ED-27, 2273-2277 (1980).

6. Buehler, M. G., The Use of Electrical Test Structure Arrays for Integrated

Circuit Process Evaluation, J. Electrochem. Soc. 127, 2284-2290 (1980).

7. Buehler, M. G., The D-C MOSFET Dopant Profile Method, J. Electrochem. Soc.

127, 701-704 (1980).

8. Bui I is, W. M., Semiconductor Measurement Technology: Metrology for

Submicrometer Devices and Circuits, NBS Spec. Publ. 400-61 (1980).

9. Bui I is, W. M., Characterizing Semiconducting Materials, Semiconductor

International 3 (9), 79-91 (1980).

10. Bui I is, W. M., and Scace, R. I., The NBS Semiconductor Technology Program

and VLSI, NBSIR 80-2057 (1980).

11. Carver, G. P., and Buehler, M. G., An Analytical Expression for the

Evaluation of Leakage Current in the Integrated Gated-Diode Electrometer,

IEEE Trans. Electron Devices ED-27, 2245-2252 (1980).

12. Carver, G. P., Linholm, L. W., and Russell, T. J., Use of Microelectronic

Test Structures to Characterize IC Materials, Processes, and Processing

Equipment, Solid State Technology 23 (9), 85-92 (1980).

13. Carver, G. P., and Rubin, S., Development of Test Structures for

Characterization of the Fabrication and Performance of Radiation-Hardened

Charge-Coupled Device (CCD) Imagers: Annual Report, December 1, 1978 to

November 30, 1979, NBSIR 80-2000 (1980).

14. Comas, J., and Wilson, R. G., Channeling and Random Equivalent Depth

Distributions of 150 keV Li, Be, and B Implanted in Silicon, J. AppI . Phys.

51, 3697-3701 (1980).

26
1980

15. DeBlasio, R., Forman, S., Hogan, S., Nuss, G., Post, H., Ross, R., and

Schafft, H. A., Interim Performance Criteria for Photovoltaic Energy

Systems, SERI Report TR 742-654 (1980).

16. Duffy, M. T., Zanzucchi, P. J., Ham, W. E., Corboy, J. F., and Cullen, G.

W., Semiconductor Measurement Technology: Method to Determine the Quality

t of Sapphire, NBS Spec. Publ. 400-62 (1980).

17. Ehrstein, J. R., Some Considerations Regarding Film Thickness Standards

for the Semiconductor Industry, NBSIR 80-2158 (1980).

18. Ehrstein, J. R., Spreading Resistance Calibration for Gallium- or AluminumDoped Silicon, J. Electrochem. Soc. 127, 1403-1404 (1980).

19. Ehrstein, J. R., Some Considerations Regarding Film Thickness Standards

for the Semiconductor Industry, Proc. Microelectronic Measurement

Technology Seminar, San Jose, CA, March 12-13, 1980, pp. 324-334 (1980).

20. Forman, R. A., Optical Study of Isotopic Effects in the Sulfur Deep Level

in Silicon, Appl. Phys. Letters 37, 776-778 (1980).

21. Galloway, K. F., Radiation Damage Estimates and Control in Ion-Beam

Lithography, J. Electrochem. Soc. 127, 1862-1864 (1980).

22. Grunthaner, F. J., Lewis, B. F., Vasquez, R. P., Maserjian, J., and

Madhukar, A., Reduced Oxidation States and Radiation-Induced Trap

Generation at Si/Si02 Interface. The Physics of MOS Insulators, G.

Lucovsky, S. T. Pantelides and F. L. Galeener Eds., pp. 290-295 (Pergamon

Press, New York, NY, 1980)

23. Grunthaner, F. J., Lewis, B. F., Zamini, N., Maserjian, J., and Madhukar,

A., XPS Studies of Structure-Induced Radiation Effects at the Si /Si 02

Interface, IEEE Trans. Nucl. Sci . NS-27, 1640-1646 (1980).

24. Ham, W. E. , Semiconductor Measurement Technology: Comprehensive Test

Pattern and Approach for Characterizing SOS Technology, NBS Spec. Publ.

400-56 (1980)

25. Harman, G. G., The Use of Acoustic Emission to Determine the Integrity of

Large Hybrid Packages, NBSIR 80-2055 (1980).

26. Hasegawa, S., Performance Characteristics of a Thin-Film Aluminum Oxide

Humidity Sensor, Proc. 30th Electronic Components Conf . , San Francisco, CA,

April 28-30, 1980, pp. 386-391 (1980).

27. Jerke, J. M., Semiconductor Measurement Technology: Accurate Linewidth

Measurements on Integrated-Circuit Photomasks, NBS Spec. Publ. 400-43

(1980)

28. Kasdan, H. L., Linewidth Measurement by Diffraction Pattern Analysis, NBSGCR 79-175 (1980)

29. Kenney, J. M., Semiconductor Measurement Technology: Modulation

Measurements for Microwave Mixers, NBS Spec. Publ. 400-16 (1980).

27
1980

30. Lankford, W. F., and Schafft, H. A., Drafting Test Methods for

Photovoltaic Systems, NBSIR 80-2060 (1980).

31. Larrabee, R. D., Interpretation of Hall Measurements, J. Electrochem. Soc.

127, 1640-1643 (1980)

32. Larrabee, R. D., and Blackburn, D. L., Theory and Application of a Nondestructive Photovoltaic Technique for the Measurement of Resistivity

Variations in Circular Semiconductor Slices, Solid-State Electronics 23,

1059-1068 (1980).

33. Larrabee, R. D., and Thurber, W. R., Theory and Application of a Two-Layer

Hall Technique, IEEE Trans. Electron Devices ED-27, 32-36 (1980).

34. Larrabee, R. D., Thurber, W. R., and Bui I is, W. M., Semiconductor

Measurement Technology: A FORTRAN Program for Calculating the Electrical

Properties of Extrinsic Silicon, NBS Spec. Publ. 400-63 (1980).

35. Lehovec, K., and Fedotowsky, A., Scanning Light Spot Analysis of Faulty

Solar Cells, Solid-State Electronics 23, 565-576 (1980).

36. Lowney, J. R., and Larrabee, R. D., The Use of Fick’s Law in Modeling

Diffusion Processes, IEEE Trans. Electron Devices ED-27, 1795-1798 (1980).

37. Lucatorto, T. B., Mcllrath, T. J., Mayo, S., and Furumoto, H. W., HighStability Coaxial Flashlamp-Pumped Dye Laser, Appl. Optics 19, 3178-3180

(1980)

38. Myers, D. R., Semiconductor Measurement Technology: Technical Impediments

to a More Effective Utilization of Neutron Transmutation Doped Silicon for

High-Power Device Fabrication, NBS Spec. Publ. 400-60 (1980).

39. Myers, D. R., Koyama, R. Y., and Phillips, W. E., An Implantation

Predeposition Technique for the Introduction of Deep-Level Chemical

Impurities, Radiation Effects 48, 145-150 (1980).

40. Myers, D. R., Roitman, P., Mayo, S., and Horowitz, D., Electronic

Properties of Ion-Implanted Silicon Annealed with Microsecond Dye-Laser

Pulses. Laser and Electron Beam Processing of Mater., C. W. White and P.

S. Peercy Eds., pp. 285-290 (Academic Press, New York, NY, 1980).

41. Myers, D. R., and Wilson, R. G., Alignment Effects on Implantation

Profiles in Silicon, Radiation Effects 47, 91-94 (1980).

42. Novotny, D. B., Experimental Photoresist Sensitometry and Exposure

Modeling, Proc. Soc. Photo-Optical Instrum. Engrs., Semiconductor

Microl ithography V, 221, 184-193 (1980).

43. Nyyssonen, D., Calibration of Optical Systems for Linewidth Measurements

on Wafers, Proc. Soc. Photo-Optical Instrum. Engrs., Semiconductor

Microl ithography V, 221, 119-126 (1980).

28
44. Nyyssonen, D., Linewidth Measurement Spotlight, Semiconductor

International 3 (3), 39-56 (1980).

45. Oettinger, F. F., and Larrabee, R. D., Measurement Techniques for High

Power Semiconductor Materials and Devices; Annual Report, October 1, 1978

to September 30, 1979, NBSIR 80-2061 (1980)

46. Patrick, S., and Giuntini, R., Terrestrial Solar Simulators for

Photovoltaic and Combined Photovoltaic and Thermal Device Measurement and

Evaluation, NBS-GCR 80-279 (1980).

47. Quate, C. F., Innovative Measurement Technology for the Semiconductor

Device Industry - "The Acoustic Microscope - A New Instrument for Viewing

Integrated Circuits," NBS-GCR 80-204 (1980).

48. Ruthberg, S., A Rapid Cycle Method for Gross Leak Testing with the Helium

Leak Detector, IEEE Trans. Components, Hybrids, and Manufacturing Tech.

CHMT-3, 564-570 (1980).

49. Ruthberg, S., A Rapid Cycle Method for Gross Leak Testing with the Helium

Leak Detector, Proc. 30th Electronic Components Conf., San Francisco, CA,

April 28-30, 1980, pp. 128-134 (1980).

50. Sawyer, D. E., and Kessler, H. K., Laser Scanning of Solar Cells for the

Display of Cell Operating Characteristics and Detection of Cell Defects,

IEEE Trans. Electron Devices ED-27, 864-872 (1980),.

51. Sawyer, D. E., Kessler, H. K., and Schafft, H. A., Measurement Techniques

for Solar Cells, Annual Report for the Period September 15, 1977 to

December 14, 1978, NBSIR 80-2027 (1980)

52. Scace, R. I., ASTM Standard Test Methods for the Semiconductor Industry,

Proc. 1st SEMI European Symp. on Materials £ Processing, Zurich,

Switzerland, March 13, 1981, pp. 202-209 (1980).

53. Thomas, D. B., Information and Guidelines for a Proposed Laboratory

Accreditation and Product Certification Program for Photovoltaic Energy

Conversion Systems, NBSIR 80-2028 (1980).

54. Thurber, W. R., A Comparison of Measurement Techniques for Determining

Phosphorus Densities in Semiconductor Silicon, J. Electron. Mater. 9, 551-

560 (1980).

55. Thurber, W. R., Mattis, R. L., Liu, Y. M., and Filtiben, J. J.,

Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon, J. Electrochem. Soc. 127, 1807-1812 (1980).

56. Thurber, W. R., Mattis, R. L., Liu, Y. M., and Filliben, J. J.,

Resistivity-Dopant Density Relationship for Boron-Doped Silicon, J. Electrochem. Soc. 127, 2291-2294 (1980).

57. Vasquez, R. P., and Grunthaner, F. J., Intensity Analysis of XPS Spectra

to Determine Oxide Uniformity: Application to Si02/Si Interfaces, Surface

Science 99, 681-688 (1980).
1980

58. Wilson, C. L., Correction of Differential Capacitance Profiles for Debye

Length Effects, IEEE Trans. Electron Devices ED-27, 2262-2267 (1980).

59. Wilson, C. L., and Blue, J. L., Semiconductor Device Simulation, Proc.

Conf. Elliptic Problem Solvers, Sante Fe, NM, June 30-July 2, 1980, pp.

435-439 (1980)

60. Wilson, R. G., Atom and Carrier Depth Distribution for 300 keV Arsenic

Channelled in the <110> of Silicon as a Function of Alignment Angle and

Ion Fluence, Radiat. Eff. Lett. 57, 109-113 (1980).

61. Wilson, R. G., and Comas, J., Correlation of Atomic Distribution and

Implantation Induced Damage Profiles in 6e-Ion Implanted Si, Radiat. Eff.

47, 137-142 (1980).

62. Wilson, R. G., and Weglein, R. D., Acoustic Material Signatures Using the

Reflection Acoustic Microscope, Ultrasonic Mater. Characterization, H.

Berger and M. Linzer Eds., NBS Spec. PubI . 596 (1980).

30
1979

Publications for the Year 1979

1. Adachi, T., and Helms, C. R., Electron Energy Loss Spectroscopy Studies of

the Si-Si02 Interface, App. Phys. Lett. 35, 199-201 (1979).

2. Baum, M., A Little Less Witchery, A Little More Craft - Improvements for

Semiconductor Quality Control, Dimensions/NBS 63(10), 12-20 (1979).

3. Berning, D. W., Semiconductor Measurement Technology: A Reverse-Bias Safe

Operating Area Transistor Tester, NBS Spec. Publ. 400-54 (1979).

4. Bhar, T. N., Dat, R., Koyama, R. Y., and Galloway, K. F., Effect of

Ionising Radiation on Mobile-Ion Density in M.O.S Oxides, Electron. Lett.

15, 16-17 (1979).

5. Blackburn, D. L., Semiconductor Measurement Technology: An Automated

Photovoltaic System for the Measurement of Resistivity Variations in HighResistivity Circular Silicon Slices, NBS Spec. Publ. 400-52 (1979).

6. Blackburn, D. L., and Berning, D. W., Reverse-Bias Second Breakdown in

Power Transistors, Proc. Electrical Overstress/Electrostatic Discharge

Symp., Denver, CO, Sept. 24-27, 1979, pp. 116-121 (1979).

7. Buehler, M. G., Comprehensive Test Patterns with Modular Test Structures:

The 2 by N Probe-Pad Array, Proc. Microelectronics Measurement Technology

Seminar, San Jose, CA, Feb. 6-7, 1979, pp. 27-38 (1979).

8. Buehler, M. G., Comprehensive Test Patterns with Modular Test Structures:

The 2 by N Probe-Pad Array Approach, Solid State Technology 22 (10), 89-94

(1979)

9. Bui I is, W. M., Metrology for Submicrometer Devices and Structures, Proc.

Microcircuit Engineering ’79 - Microstructure Fabrication, Aachen, West

Germany, Sept. 25-27, 1979, pp. 271-282 (1979).

10. Carver, G. P., and Buehler, M. G., The Development of Test Structures for

Characterization of the Fabrication and Performance of Radiation-Hardened

CCD Imagers, NBSIR 79-1744 (1979) .

11. Chang, T. T., Detection of Phosphorus in Epitaxial Silicon by EPR, NBSIR

79-1748 (1979).

12. Dickey, D. H., and Ehrstein, J. R., Semiconductor Measurement Technology:

Spreading Resistance Analysis for Silicon Layers with Nonuniform

Resistivity 400-48 (1979).

13. Dumin, D. S., and Buehler, M. G., A Low Cost Approach to Modernize

Undergraduate Electron Laboratory Instruction, Conference Record, 3rd

Biennial Un i v/Industry/Govt Microelectronics Symp., Lubbock, TX, May 21-23,

1979, pp. 168-170 (1979).

31
1979

14. Ehrstein, J. R., Two-Probe (Spreading Resistance) Measurements for

Evaluation of Semiconductor Materials and Devices. Nondestructive

Evaluation of Semiconductor Materials and Devices, J. N. Zemel Ed., pp. 1-

66 (Plenum Press, New York, NY, 1979).

15. Galloway, K. F., VLSI Processing, Radiation and Hardening, Semiconductor

International 2 (4), 65-73 (1979).

16. Calloway, K. F., and Mayo, S., Radiation Levels Associated with the

Electron-Beam Metallization Process, Solid State Technology 22 (5), 96-100

(1979)

17. Galloway, K. F., Mayo, S., and Roitman, P., Radiation Levels Associated

with Advanced Lithographic Techniques, J. Electrochem. Soc. 126, 2245-2248

(1979)

18. Gilsinn, D., and Kraft, R., Semiconductor Measurement Technology: DISTRIB

I, An Impurity Redistribution Computer Program, NBS Spec. PubI . 400-57

(1979)

19. Goldsmith, N., and Mayer, A., High-Speed Spreading Resistance Probe, NBSGCR 79-166 (1979)

20. Goodman, A. M., Extended Range MIS C(V) Measurement, A Technique for

Monitoring Semiconductor Device Processing, NBS-GCR 78-155 (1979).

21. Grunthaner, F. J., Grunthaner, P. J., Vasquez, R. P., Lewis, B. F.,

Maserjian, J., and Madhukar, A., Local Atomic and Electronic Structure of

Oxide/GaAs and Si02/Si Interfaces Using High-Resolution XPS, J. Vac. Sci . Techno I . 16, 1443-1453 (1979).

22. Grunthaner, F. J., Grunthaner, P. J., Vasquez, R. P., Lewis, B. F.,

Maserjian, J., and Madhukar, A., High-Resolution X-Ray Photoelectron

Spectroscopy as a Probe of Local Atomic Structure: Application to

Amorphous Si02 and the Si-Si02 Interface, Phys. Rev. Letters 43, 1683-1686

(1979) .

23. Harman, G. G., Semiconductor Measurement Technology: Nondestructive Tests

Used to Insure the Integrity of Semiconductor Devices, with Emphasis on Acoustic Emission Techniques, NBS Spec. Publ. 400-59 (1979).

24. Harman, G. G., Non-Destructive Tests Used to Insure the Integrity of

Semiconductor Devices with Emphasis on Passive Acoustic Techniques.

Nondestructive Evaluation of Semiconductor Materials and Devices, J. N. Zemel Ed., pp. 677-738 (Plenum Press, New York, NY, 1979).

25. Helms, C. R., Morphology and Electronic Structure of Si-Si02 Interfaces

and Si Surfaces, J. Vac. Sci. Technol. 16, 608-614 (1979).

26. Helms, C. R., Johnson, N. M., Schwarz, S. A., and Spicer, W. E., Studies

of the Effect of Oxidation Time and Temperature on the Sl-Si02 Interface

Using Auger Sputter Profiling, J. AppI . Phys. 50, 7007-7014 (1979).

32
1979

27. Johnson, N. M., Bartel ink, D. J., Gold, R. B., and Gibbons, J. F.,

Constant-Capacitance DLTS Measurement of Defect-Density Profiles in

Semiconductors, J. Appl. Phys. 50, 4828-4833 (1979).

,28. Koyama, R. Y., and Buehler, M. G., Semiconductor Measurement Technology: A

Wafer Chuck for Use Between -196 and 350C, NBS Spec. Publ. 400-55 (1979).

29. Koyama, R. Y., and Buehler, M. G., Novel Variable-Temperature Chuck for

Use in the Detection of Deep Levels in Processed Semiconductor Wafers, Rev.

Sci. Instrum. 50, 983-987 (1979).

30. Larrabee, G. B., and Dobrott, R. D., Techniques for the Preparation and

Analysis of Standard Silicon Semiconductor Specimens for the Ion

Microprobe Mass Analyzer, NBS-GCR 79-158 (1979).

31. Leedy, T. F., Large Scale Integration Digital Testing - Annotated

Bibliography: 1969 - 1978, NBS Tech. Note 1102 (1979).

32. Li, S. S., Semiconductor Measurement Technology: The Theoretical and

Experimental Study of the Temperature and Dopant Density Dependence of

Hole Mobility, Effective Mass, and Resistivity in Boron-Doped Silicon, NBS

Spec. Publ. 400-47 (1979).

33. Linholm, L. W., CMOS/SOS Test Patterns for Process Evaluation and Control:

Annual Report, March 1 to November 1, 1978, NBSIR 79-1595 (1979).

34. Linholm, L. W., Carver, G. P., and Russell, T. J., The Use of

Microelectronic Test Structures to Characterize IC Materials, Processes,

and Processing Equipment, Proc. Measurement Sci. Conf., San Luis Obispo,

CA, Nov. 30-Dec. 1, 1979, pp. 129-150 (1979).

35. Mayo, S., and Evans, W. H., Development of Hydrogen and Hydroxyl

Contamination in Thin Silicon Dioxide Thermal Films, NBSIR 78-1558 (1979).

36. Myers, D. R., and Phillips, W. E., Observation of Unequal Densities for

Sulfur Defects in Silicon Predeposited by Low Fluence Ion Implantation, J. Electron. Mat. 8, 781-788 (1979).

37. Myers, D. R., Roitman, P., and Mayo, S., Electrical Characterization of

Low-Dose Ion-Implanted Silicon Annealed with Microsecond Laser Pulses.

Laser-Solid Interactions and Laser Processing - 1978, AIP Conference Proc.

50, S. D. Ferris, H. J. Leamy, and J. M. Poate Eds., pp. 563-568 (American

Institute of Physics, New York, NY, 1979).

38. Myers, D. R., Wilson, R. G., and Comas, J., Considerations of Ion

Channeling for Semiconductor Microstructure Fabrication, J. Vac. Sci.

Techno I . 16, 1893-1896 (1979).

39. Nyyssonen, D., Spatial Coherence: The Key to Accurate Optical

Micrometrology, Proc. Soc. Photo-Optical Instrum. Engrs., Applications of

Optical Coherence 194, 34-44 (1979).

33
1979

40. Nyyssonen, D., and Jerke, J. M., Optical Linewidth Measurement - A Basic

Understanding, Proc. Microelectronic Measurement Technology Seminar, San

Jose, CA, Feb. 6-7, 1979, pp. 251-266 (1979).

41. Oettinger, F. F., Measurement Techniques for High Power Semiconductor

Materials and Devices, Annual Report, October 1, 1977 to September 30,

1978, DoE/RA-0041, NBSIR 79-1756 (1979).

42. Phillips, W. E., Koyama, R. Y., and Buehler, M. G., Suppression of

Measurement Interferences from Interface States and Mobile Ions in

Thermally Stimulated Current Measurements in an MOS Capacitor, J. Electrochem. Soc. 126, 1979-1981 (1979).

43. Quate, C. F., The Acoustic Microscope, Sci. Am. 241(4), 62-70 (1979).

44. Quate, C. F., Atalar, A., and Wickramasi nghe, H. K., Acoustic Microscopy

with Mechanical Scanning - A Review, Proc. IEEE 67, 1092-1114 (1979).

45. Rubin, S., and Oettinger, F. F., Semiconductor Measurement Technology:

Thermal Resistance Measurements on Power Transistors, NBS Spec. Publ. 400-

14 (1979).

46. Russell, T. J., and Maxwell, D. A., Semiconductor Measurement Technology:

A Production-Compatible Microelectronic Test Pattern for Evaluating

Photomask Misalignment, NBS Spec. Publ. 400-51 (1979).

47. Russell, T. J., Maxwell, D. A., Reimann, C. T., and Buehler, M. G., A

Microelectronic Test Pattern for Measuring Uniformity of an Integrated

Circuit Fabrication Technology, Solid State Technology 22 (2), 71-74

(1979)

48. Sawyer, D. E., Kessler, H. K., and Schafft, H. A., Measurement Techniques

for Solar Cells, Quarterly Report for the Period April 1 to June 30, 1978,

NBSIR 79-1909 (1979)

49. Sawyer, D. E., Kessler, H. K., and Schafft, H. A., Solar Cell Measurement

Technique Development and Other Services, Proc. Photovoltaic Advanced

Materials Review Meeting, Oct. 24-26, 1978, SERI/TP-49-105, CONF. 781017,

pp. 41-50 (1979).

50. Sawyer, D. E., and Schafft, H. A., Semiconductor Measurement Technology:

NBS/DOE Workshop, Stability of (Thin Film) Solar Cells and Materials, NBS

Spec. Publ. 400-58 (1979).

51. Scace, R. I., Zinc Oxide Varistors for Lightning Arrester Service, NBSIR

79-1939 (1979).

52. Scace, R. I., Technology of Semiconductor Manufacturing, Product

Development, and Product Types, Appendix to A Report on the U.S.

Semiconductor Industry, U.S. Dept, of Commerce, 105-132 (1979) .

53. Schafft, H. A., Semiconductor Measurement Technology: Reliability

Technology for Cardiac Pacemakers III - A Workshop Report, NBS Spec. Publ.

400-50 (1979).

34
54. Schafft, H. A., Standards for Photovoltaic Energy Conversion Systems,

NBSIR 79-1743 (1979)

55. Schafft, H. A., and Sawyer, D. E., A Perspective of a Workshop on Stability of (Thin Film) Solar Cells and Materials, NBSIR 79-1778 (1979).

56. Schwarz, S. A., and Helms, C. R., A Statistical Model of Sputtering, J. Appl. Phys. 50, 5492-5499 (1979).

57. Schwarz, S. A., and Helms, C. R., Model of Ion Knock-On Mixing with

Application to Si-Si02 Interface Studies, J. Vac. Sci . Techno I . 16, 781-

783 (1979).

58. Sulouff, R. E., Investigation of Moisture Measurement, Failure Rate, and

Leak Rate and Study of Moisture Infusion, NBS-GCR 79-170 (1979).

59. Weglein, R. D., A Model for Predicting Acoustic Material Signatures, Appl.

Phys. Letters 34, 179-181 (1979).

60. Weglein, R. D., and Wilson, R. G., An Acoustic Gray Scale for Scanning

Acoustic Microscopy and Diagnostic Ultrasound, Ultrasound Imaging 1, 89-

100 (1979).
1978

Publications for the Year 1978

1. Atalar, A., An Angular-Spectrum Approach to Contrast in Reflection

Acoustic Microscope, J. AppI . Phys. 49, 5130-5139 (1978).

2. Blackburn, D. L., Photovoltaic Technique for Measuring Resistivity

Variations of High Resistivity Silicon Slices, NBS J. Res. 83, 265-271

(1978)

3. Blackburn, D. L., and Bern! ng, D. W., Some Effects of Base Current on Transistor Switching and Reverse-Bias Second-Breakdown, Tech. Digest, 1978

Int. Electron Devices Meeting, Washington, D.C., Dec. 4-6, 1978, pp. 671-

675 (1978).

4. Blackburn, D. L., and Larrabee, R. D., Automated Photovoltaic Technique

for Nondestructi vely Measuring Resistivity Variations of High Resistivity

Silicon Wafers. Semiconductor Characterization Techniques, 78-3, P. A.

Barnes and G. A. Rozgonyi Eds., pp. 168-179 (Electrochemical Society,

Princeton, NJ, 1978).

5. Buehler, M. G., Microelectronic Test Patterns for Use in Procuring LSICs,

Proc. Industry/Joi nt Services Automatic Test Conf. and Workshop, San Diego,

CA, April 5-7, 1978, pp. 233-235 (1978).

6. Buehler, M. G., Limitations and Applications of the DC MOSFET Profile

Method. Semiconductor Characterization Techniques, 78-3, P. A. Barnes and

G. A. Rozgonyi Eds., pp. 241-252 (Electrochemical Society, Princeton, NJ,

1978)

7. Buehler, M. G., Grant, S. D., and Thurber, W. R., Bridge and van der Pauw

Sheet Resistors for Characterizing the Line Width of Conducting Layers, J. Electrochem. Soc. 125, 650-654 (1978).

8. Buehler, M. G., and Thurber, W. R., An Experimental Study of Various Cross

Sheet Resistor Test Structures, J. Electrochem. Soc. 125, 645-650 (1978).

9. Bui I is, W. M., Government Programs on Advanced Technology and

Manufacturing Techniques: Comments on U.S.A., Japan, and Europe, NBSIR 78-

1482 (1978)

10. Bui I is, W. M., Cooperative Research Can Strengthen U.S. Lead in

Microelectronics, Microelectronic Manufacturing and Testing 1 (2), 18-19

(1978) .

11. Christou, A., Semiconductor Measurement Technology: Automated Scanning LowEnergy Electron Probe (ASLEEP) for Semiconductor Wafer Diagnostics, NBS

Spec. Publ. 400-30 (1978).

12. Christou, A., Nelson, G., Jenkins, W., Davey, J. E., and Wilkens, N.,

Characterization of Semiconductor Wafer Defects by ASLEEP, SEM, and

Scanning AES, Scanning Electron Microscopy/1978 O’Hare, IL, April 17-21,

1978 1, pp. 273-282 (1978).

36
13. Galloway, K. F., VLSI Processing, Radiation, and Hardening, IEEE Trans.

Nucl. Sci. NS-25, 1469-1472 (1978).

14. Galloway, K. F., and Mayo, S., On the Compatibility of X-Ray Lithography

and SOS Device Fabrication, IEEE Trans. Electron Devices ED-25, 549-550

(1978) .

15. Galloway, K. F., and Mayo, S., Radiation Dose at the Silicon-Sapphire

Interface Due to Electron-Beam Aluminization, J. Appl. Phys. 49, 2586-2588

(1978)

16. Grunthaner, F. J., and Maserjian, J., Chemical Structure of the

Transitional Region of the Si 02/Si Interface. The Physics of Si 02 and Its

Interfaces S. T. Pantelides Ed., pp. 389-395 (Pergamon Press, New York,

NY, 1978).

17. Harman, G. G., and Cannon, C. A., The Microelectronic Wire Bond Pull Test - How to Use It, How to Abuse It, IEEE Trans. Components, Hybrids, and

Manufacturing Technology CHMT-1, 203-210 (1978).

18. Harman, G. G., and Cannon, C. A., The Microelectronic Wire Bond Pull Test - How to Use It, How to Abuse It, Proc. 1978 IEEE Electronic Components

Conference, Anaheim, CA, April 25, 1978, pp. 291-299 (1978).

19. Helms, C. R., Johnson, N. M., Schwarz, S. A., and Spicer, W. E., Auger

Sputter Profiling Studies of the Si -Si 02 Interface. The Physics of Si 02

and Its Interfaces, S. T. Pantelides Ed., pp. 366-372 (Pergamon Press, New

York, NY, 1978).

20. Helms, C. R., Johnson, N. M., Schwarz, S. A., and Spicer, W. E., Auger

Sputter Profiling Studies of the Si -Si 02 Interface. Semiconductor

Characterization Techniques, 78-3, P. A. Barnes and G. A. Rozgonyi Eds., pp.

136-138 (Electrochemical Society, Princeton, NJ, 1978).

21. Helms, C. R., Spicer, W. E., and Johnson, N. M., New Studies of the SiSi02 Interface Using Auger Sputter Profiling, Solid State Communications

25, 673-676 (1978).

22. Helms, C. R., Strausser, Y. E., and Spicer, W. E., Observation of an Intermediate Chemical State of Silicon in the Si-Si02 Interface by Auger

Sputter Profiling, Appl. Phys. Letters 33, 767-769 (1978).

23. Hi I ten, J. S., Lederer, P. S., Mayo-Wells, J. F., and Vezzetti, C. F.,

Loose-Particle Detection in Microelectronic Devices, NBSIR 78-1590 (1978).

24. Jamba, D. M., Secondary Particle Collection in Ion Implantation Dose

Measurement, Rev. Sci. Instrum. 49, 634-638 (1978).

25. Johannessen, J. S., Spicer, W. E., Gibbons, J. F., Plummer, J. D., and

Taylor, N. J., Observation of Phosphorus Pile-Up at the Si02-Si Interface,

J. Appl. Phys. 49, 4453-4458 (1978).

26. Koyama, R. Y., Detection of Deep Levels in High Power Semiconductor

Materials and Devices, NBS J. Res. 83, 273-281 (1978).
27. Koyama, R. Y., Wafer Mapping of Electrically Active Defects.

Semiconductor Characterization Techniques, 78-3, P. A. Barnes and G. A.

Rozgonyi Eds., pp. 220-228 (Electrochemical Society, Princeton, NJ, 1978).

28. Koyama, R. Y., Techniques for Characterizing Defects in Starting Silicon

Wafers Using TSM. Semiconductor Characterization Techniques, 78-3, P. A.

Barnes and G. A. Rozgonyi Eds., pp. 53-60 (Electrochemical Society,

Princeton, NJ, 1978).

29. Koyama, R. Y., Blackburn, D. L., and Oettinger, F. F., Measurement

Techniques for High Power Semiconductor Materials and Devices. Proc.:

Light-Fired Thyristor Workshop, EPRI Report WS 77-049 (1978).

30. Koyama, R. Y., Phillips, W. E., Myers, D. R., Liu, Y. M., and Dietrich, H.

B., The Energy Levels and the Defect Signature of Sulfur-Implanted Silicon

by Thermally Stimulated Measurements, Solid-State Electronics 21, 953-955

(1978)

31. Kuczer, P., Hook, H. 0., and Goodman, A. M., A Versatile High-Voltage Bias

Supply for Extended Range MIS C(V) and G(V) Measurements, RCA Rev. 39, 309

339 (1978).

32. Larrabee, R. D., Interpretation of Hall Measurements. Semiconductor

Characterization Techniques 78-3 P. A. Barnes, and G. A. Rozgonyi Eds., pp

71-76 (Electrochemical Society, Princeton, NJ, 1978).

33. Larrabee, R. D., and Thurber, W. R., Theory and Application of a Two-Layer

Hall Technique, NBSIR 78-1553 (1978).

34. Leedy, T. F., and Liu, Y. M., Semiconductor Measurement Technology:

Microelectronic Processing Laboratory at NBS, NBS Spec. PubI . 400-53

(1978)

35. Li, S. S., The Dopant Density and Temperature Dependence of Hole Mobility

and Resistivity in Boron Doped Silicon, Solid-State Electronics 21, 1109-

1117 (1978).

36. Marsden, C. P., Tabulation of Published Data on Electron Devices of the U.

S.S.R. Through December 1976, NBSIR 78-1564 (1978)

37. Mattis, R. L., and Doggett, M. R., A Microelectronic Test Pattern for

Analyzing Automated Wafer Probing and Probe Card Patterns, Solid State

Technology 21 (11), 76-79 (1978).

38. Mayo, S., and Evans, W. H., Thermodynamic Considerations in the Use of

Polysilicon Oxidation Tubes for Clean Si02 Film Preparation, J. Electrochem. Soc. 125, 106-110 (1978).

39. Mayo, S., Koyama, R. Y., and Leedy, T. F., Control of Mobile Ion

Contamination in Oxidation Ambients for MOS Device Processing, NBSIR 77-

1404 (1978).
1978

40. McCarthy, D., Acevedo, J., Stamps, B., Lonky, M., and Buehler, M. G., An

Advanced Integrated Test Structure for High Speed Measurement of

Generation Lifetime, Proc. Govt. Microcircuit Applications Conf., Monterey,

CA, Nov. 14-16, 1978, pp. 37-38 (1978).

41. Myers, D. R., Koyama, R. Y., and Phillips, W. E., An Implantation

Predeposition Technique for the Introduction of Deep-Level Chemical

Impurities, Proc. Ion Beam Modification of Mater. Conf., Budapest, Hungary,

Sept. 4-8, 1978, pp. 439-448 (1978).

42. Myers, D. R., and Phillips, W. E., Existence of an Isotope Shift for the

Sulfur Deep Level in Silicon, AppI . Phys. Letters 32, 756-758 (1978).

43. Myers, D. R., and Wilson, R. G., Alignment Effects on Implantation

Profiles in Silicon, Proc. Ion Beam Modification of Mater. Conf., Budapest,

Hungary, Sept. 4-8, 1978, pp. 103-111 (1978).

44. Novotny, D. B., and Ciarlo, D. R., Semiconductor Measurement Technology:

Automated Photomask Inspection, NBS Spec. Publ. 400-46 (1978).

45. Novotny, D. B., and Ciarlo, D. R., Automated Photomask Inspection, Solid

State Technology 21 (6), 59-67 (1978).

46. Novotny, D. B., and Ciarlo, D. R., Automated Photomask Inspection, Solid

State Technology 21 (5), 51-59 (1978).

47. Nyyssonen, D., Optical Linewidth Measurements on Wafers, Proc. Soc. PhotoOptical Instrum. Engrs., Developments In Semiconductor Micro I i thography

III 135, 115-119 (1978).

48. Nyyssonen, D., and Jerke, J. M., Linewidth Measurement: From Fine Art to

Science, Tech. Digest, 1978 Int. Electron Devices Meeting, Washington, D.

C., Dec. 4-6, 1978, pp. 437-440 (1978).

49. Oettinger, F. F., Measurement Techniques for High Power Semiconductor

Materials and Devices: Annual Report, January 1 to December 31, 1977, Dept,

of Energy Report HCP/T6010/A021-02, NBSIR 78-1474 (1978)

50. Oroshnik, J., and Croll, W. K., Threshold Adhesion Failure: An Approach to

Aluminum Thin-Film Adhesion Measurement Using the Stylus Method. Adhesion

Measurement of Thin Films, Thick Films, and Bulk Coatings, ASTM STP 640, K.

L. Mittal Ed., pp. 158-183 (Am. Soc. for Testing and Mat Is., Philadelphia,

PA, 1978).

51. Roitman, P., Electron Beam Induced Currents in Metal Oxide Silicon Devices,

Proc. 13th Annual Conf., Microbeam Analysis Soc., Ann Arbor, MI, June 19-

23, 1978, pp. 36A-36C (1978).

52. Russell, T. J., Maxwell, D. A., Reimann, C. T., and Buehler, M. G., A

Microelectronic Test Pattern for Measuring the Uniformity of an Integrated

Circuit Fabrication Technology, Proc. Govt. Microcircuit Applications

Conf., Monterey, CA, Nov. 14-16, 1978, pp. 33-36 (1978).

39
1978

53. Sawyer, D. E., A Technique for Using An Optical Scanner to Reveal Solar

Cell Defects, Proc. 13th IEEE Photovoltaic Specialists Conference,

Washington, D.C., June 5-8, 1978, pp. 1249-1250 (1978).

54. Sawyer, D. E., Kessler, H. K., and Schafft, H. A., Measurement Techniques

for Solar Cells, (Quarterly Report: September 15 to December 31, 1977,

NBSIR 78-1488 (1978).

55. Sawyer, D. E., Kessler, H. K., and Schafft, H. A., Measurement Techniques

for Solar Cells, Quarterly Report: January 1 to March 31, 1978, NBSIR 78-

1513 (1978).

56. Scace, R. I., An Assessment of High-Power Thyristor Technology, NBSIR 78-

1559 (1978).

57. Schafft, H. A., Performance Criteria for Photovoltaic Power Conditioning,

Control, and Storage, Proc. DOE Photovoltaic Tech. Development 4

Applications Program Rev., Arlington, VA, Nov. 7-9, 1978, pp. 2-29-2-51

(1978)

58. Schwarz, S. A., Helms, C. R., and Spicer, W. E., High Resolution Auger

Sputter Profiling Study of the Effect of Phosphorus Pileup on the Si -Si 02

Interface Morphology, J. Vac. Sci . Technol. 15, 227-230 (1978).

59. Stach, J., Das, M. B., and Tressler, R. E., Development of Measurement

Techniques for Monitoring Chemical Purity of Materials Used in Digital IC

Processing, NBS-GCR 78-134 (1978).

60. Strausser, Y. E., and Majumder, K. S., Chemical Structure of the Al/Si02

Interface, J. Vac. Sci. Technol. 15, 238-239 (1978).

61. Strausser, Y. E., Scheibner, E. J., and Johannessen, J. S., Observations

of AI203 and Free Silicon in the Interface Between Aluminum Films and Si02,

Thin Solid Films 52, 203-214 (1978).

62. Sulouff, R. E., A Study of Leak Rate Versus Reliability of Hybrid Packages,

Proc. 1978 Int. Microelectronics Symp., Minneapolis, MN, Sept. 25-27, 1978,

pp. 121-124 (1978).

63. Swyt, D. A., Design of a Pattern on a Photomask-Like Physical Standard for

Evaluation and Calibration of Linewidth-Measuring Systems, Solid State

Technology 21 (1), 35-42 (1978).

64. Swyt, D. A., Rosberry, F. W., and Nyyssonen, D., Photomask Linewidth

Measurement, Circuits Manufacturing 18 (9), 20 (1978).

65. Thurber, W. R., and Buehler, M. G., Semiconductor Measurement Technology:

Microelectronic Test Pattern NBS-4, NBS Spec. PubI . 400-32 (1978).

66. Thurber, W. R., and Carpenter, B. S., Boron Determination in Silicon by

the Nuclear Track Technique, J. Electrochem. Soc. 125, 654-657 (1978).

40
67. Thurber, W. R., Mattis, R. L., and Liu, Y. M., Resistivity-Dopant Density

Relationship for Silicon. Semiconductor Characterization Techniques, 78-3,

P. A. Barnes and G. A. Rozgonyi Eds., pp. 81-92 (Electrochemical Society,

Princeton, NJ, 1978).

68. Weglein, R. D., Gray Scale for Scanning Acoustic Microscopy, Electron.

Lett. 14, 656-657 (1978).

69. Weglein, R. D., and Wilson, R. G., Characteristic Material Signatures by

Acoustic Microscopy, Electron. Lett. 14, 352-354 (1978).

70. Wilson, R. G., and Comas, J., Correlation of Atomic Distribution and

Implantation Induced Damage Profiles in Be-Ion Implanted Silicon, Proc.

Ion Beam Modification of Mater. Conf., Budapest, Hungary, Sept. 4-8, 1978,

pp. 547-556 (1978).

71. Wilson, R. G., Dunlap, H. L., Jamba, D. M., and Myers, D. R.,

Semiconductor Measurement Technology: Angular Sensitivity of Controlled

Implanted Doping Profiles, MBS Spec. Publ. 400-49 (1978).

72. Zanzucchi, P. J., and Duffy, M. T., Surface Damage and the Optical

Reflectance of Single-Crystal Silicon, Appl. Optics 17, 3477-3481 (1978).

73. Zanzucchi, P. J., Duffy, M. T., and Alig, R. C., Optical Reflectance

Method for Determining Surface Quality of Sapphire, J. Electrochem. Soc.

125, 299-305 (1978).
1977

Publications for the Year 1977

1. Atalar, A., Quate, C. F., and Wickramasi nghe, H. K., Phase Imaging in

Reflection with the Acoustic Microscope, Appl. Phys. Letters 31, 791-793

(1977)

2. Blackburn, D. L., Semiconductor Measurement Technology: Safe Operating

Area Limits for Power Transistors - Videotape Script, NBS Spec. Publ. 400-

44 (1977)

3. Blackburn, D. L., Koyama, R. Y., Oettinger, F. F., and Rogers, G. J.,

Measurement Techniques for High Power Semiconductor Materials and Devices:

Annual Report, January 1 to December 31, 1976, ERDA Report CONS/3800-2,

NBSIR 77-124 (1977)

4. Blackburn, D. L., and Rubin, S., A Nondestructive Method for the

Determination of Forward-Biased Safe-Operating-Area Limits for Power

Transistors, PESC ’77 Record, IEEE Power Electronics Specialists

Conference 1977, Palo Alto, CA, June 14-16, 1977, pp. 17-22 (1977).

5. Buehler, M. G., Dopant Profiles Determined from Enhancement Mode MOSFET DC

Measurements, Appl. Phys. Letters 31, 848-850 (1977).

6. Buehler, M. G., Microelectronic Test Patterns for Use in Procuring Custom

and Highly Reproducible Integrated Circuits. Proc. Symp. on Utilization

of LSICs in Military Systems, Arlington, VA, Aug. 9-11, 1977, pp.

III102-III117 (1977).

7. Buehler, M. G., and Sawyer, D. E., Microelectronic Test Patterns Aid

Production of Custom ICs, Circuits Manufacturing 17 (2), 46-56 (1977).

8. Buehler, M. G., and Thurber, W. R., Measurement of the Resistivity of a Thin Square Sample with a Square Four-Probe Array, Solid-State Electronics

20, 403-406 (1977).

9. Bui I is-, W. M. , The NBS Semiconductor Technology Program, Proc. Symp. on Utilization of LSICs in Military Systems, Arlington, VA, Aug. 9-11, 1977,

pp. III87-III101 (1977).

10. Bui I is, W. M., and Galloway, K. F., Semiconductor Electronics at the

National Bureau of Standards: Programs and Opportunities Paper IX-I, Proc.

2nd IEEE (G-PHP) /ISHM Un i v/Industry/Govt Microelectronics Symp.,

Albuquerque, NM, Jan. 3-5, 1977, (1977).

11. Bui I is, W. M., and Vi eweg-Gutber I et, F. G., Current Trends in Silicon

Characterization Techniques. Semiconductor Silicon/1977 H. R. Huff, and

E. SirtI Eds., pp. 360-366 (Electrochemical Society, Princeton, NJ, 1977).

12. Comizzoli, R. B., Nondestructive, Reverse Decoration of Defects in IC

Passivation Overcoats, J. Electrochem. Soc . 124, 1087-1095 (1977).

42

13.

David, J. M., and Buehler, M. G., A Numerical Analysis of Various Cross

Sheet Resistor Test Structures, Solid-State Electronics 20, 539-543 (1977).
1977

14. Devaney, J. R., Leedy, K. 0., and Keery, W. J., Semiconductor Measurement

Technology: Notes on SEM Examination of Microelectronic Devices, NBS Spec.

Publ. 400-35 (1977).

15. Dobrott, R. D., Keenan, J. A., and Larrabee, G. B., Ion Microprobe

Analysis of Integrated Circuit Structures, 15th Annual Proceedings,

Reliability Physics 1977, Las Vegas, NV, April 12-14, 1977, pp. 54-60

(1977)

16. Ehrstein, J. R., Effect of Specimen Preparation on the Calibration and

Interpretation of Spreading Resistance Measurements. Semiconductor

Silicon/1977, H. R. Huff and E. SirtI Eds., pp. 377-386 (Electrochemical

Society, Princeton, NJ, 1977).

17. Erickson, N. E., ESCA Studies of Clean Si (111) Surfaces, Physica Scripta

16, 462-465 (1977)

18. French, J. C., The Measurement Challenge in Electronic Technology,

Dimensions/NBS 61 (2), 12-15 (1977).

19. Galloway, K. F., and Roitman, P., Some Aspects of Using a Scanning

Electron Microscope for Total Dose Testing, NBSIR 77-1235 (1977).

20. Galloway, K. F., and Roitman, P., Important Considerations for SEM Total

Dose Testing, IEEE Trans. Nucl. Sci. NS-24, 2066-2070 (1977).

21. Goodman, A. M., Semiconductor Measurement Technology: Suppression of

Premature Dielectric Breakdown for High-Voltage Capacitance Measurements,

NBS Spec. Publ. 400-37 (1977).

22. Goodman, A. M., Semiconductor Measurement Technology: A 25-kV BiasIsolation Unit for 1-MHz Capacitance and Conductance Measurements, NBS

Spec. Publ. 400-40 (1977).

23. Goodman, A. M., Suppression of Premature Dielectric Breakdown for HighVoltage Capacitance Measurements, RCA Rev. 38, 436-442 (1977).

24. Goodman, A. M., A 25-kV Bias-Isolation Unit for 1-MHz Capacitance and

Conductance Measurements, RCA Rev. 38, 512-532 (1977).

25. Goodman, A. M., and Weitzel, C. E., The Effect of Electron-Beam

Aluminization on the Si-Sapphire Interface, AppI . Phys. Letters 31, 114-

117 (1977).

26. Grunthaner, F. J., and Maserjian, J., Experimental Observations of the

Chemistry of the Si02/Si Interface, IEEE Trans. Nucl. Sci. NS-24, 2108-

2112 (1977).

27. Ham, W. E., Intrachip and Spatial Parametric Integrity - An Important Part

of IC Process Characterization, Tech. Digest, Int. Electron Devices

Meeting, Washington, D.C., Dec. 5-7, 1977, pp. 406-409 (1977).

43
1977

28. Harman, G. G., The Use of Acoustic Emission in a Test for Beam-Lead, TAB,

and Hybrid Chip Capacitor Bond Integrity, IEEE Trans. Parts, Hybrids, and

Packaging PHP-13, 116-127 (1977).

29. Harman, G. G., and Albers, J., The Ultrasonic Welding Mechanism as Applied

to Aluminum- and Gold-Wire Bonding in Microelectronics, IEEE Trans. Parts,

Hybrids, and Packaging PHP-13, 406-412 (1977).

30. Helms, C. R., Garner, C. M., Miller, J., Lindau, I., Schwarz, S. A., and

Spicer, W. E., Studies of Si/Si02 Interfaces by Auger Sputter Profiling

and Photoelectron Spectroscopy Using Synchrotron Radiation, Proc. 7th Int.

Vac. Congr. & 3rd Int. Conf. Solid Surfaces, Vienna, Sept. 1977, pp. 2241-

2243 (1977).

31. Jamba, D. M., Semiconductor Measurement Technology: Some Aspects of Dose

Measurement for Accurate Ion Implantation, NBS Spec. Publ. 400-39 (1977).

32. Jerke, J. M., Hartman, A. W., Nyyssonen, D., Swing, R. E., Young, R. D.,

and Keery, W. J., Comparison of Linewidth Measurements on an SEM/Interferometer System and an Optical Li newidth-Measur i ng Microscope,

Proc. Soc. Photo-Optical Instrum. Engrs., Developments in Semiconductor

Microlithography, II, 100, 37-45 (1977).

33. Johannessen, J. S., Helms, C. R., Spicer, W. E., and Strausser, Y. E.,

Auger Depth Profiling of MNOS Structures by Ion Sputtering, IEEE Trans.

Electron Devices ED-24, 547-551 (1977).

34. Kern, W., and Comizzoli, R. B., Semiconductor Measurement Technology:

Techniques for Measuring the Integrity of Passivation Overcoats on Integrated Circuits, NBS Spec. Publ. 400-31 (1977).

35. Kern, W., and Comizzoli, R. B., New Methods for Detecting Structural

Defects in Glass Passivation Films, J. Vac. Sci . Technol. 14, 32-39 (1977).

36. Kompfner, R., and I^uate, C. F., Acoustic Radiation and Its Use in

Microscopy, Physics in Technology 8, 231-237 (1977).

37. Kuczer, P., Hook, H. 0., and Goodman, A. M., Semiconductor Measurement

Technology: A Versatile High-Voltage Bias Supply for Extended Range MIS

C(V) and G(V) Measurements, NBS Spec. Publ. 400-41 (1977).

38. Leedy, K. 0., Measurement of Transistor Collector-Emitter Saturation

Voltage, NBSIR 77-1231 (1977).

39. Leedy, K. 0., A Bibliography on Electron Beam Induced Current Analysis of

Semiconductor Devices, Solid State Technology 20 (2), 45-48 (1977).

40. Li, S. S., Semiconductor Measurement Technology: The Dopant Density and

Temperature Dependence of Electron Mobility and Resistivity in N-Type

Silicon, NBS Spec. Publ. 400-33 (1977).

41. Li, S. S., and Thurber, W. R., The Dopant Density and Temperature

Dependence of Electron Mobility and Resistivity in n-Type Silicon, SolidState Electronics 20, 609-616 (1977).

44
42. Mattis, R. L., and Buehler, M. G., A New Method for Calculating Background

Dopant Density from p-n Junction Capacitance-Voltage Measurements, J. Electrochem. Soc. 124, 1918-1923 (1977).

43. Mayo, S., and Evans, W. H., Development of Sodium Contamination in

Semiconductor Oxidation Atmospheres at lOOOC, J. Electrochem. Soc. 124,

780-785 (1977).

44. Novotny, D. B., Sensitometry of Photoresists for Microelectronics,

Photographic Science and Engineering 21, 351-355 (1977).

45. Nyyssonen, D., Linewidth Measurement with an Optical Microscope: The

Effect of Operating Conditions on the Image Profile, Appl. Optics 16, 2223-

2230 (1977).

46. Nyyssonen, D., Optical Linewidth Measurements on Silicon and Iron-Oxide

Photomasks, Proc. Soc. Photo-Optical Instrum. Engrs., Developments in

Semiconductor Microlithography, II, 100, 127-134 (1977).

47. Quate, C. F., A Scanning Acoustic Microscope. Semiconductor Silicon/1977,

H. R. Huff and E. SirtI Eds., pp. 422-430 (Electrochemical Society,

Princeton, NJ, 1977).

48. Rubin, S., and Blackburn, D. L., A Test Unit for the Nondestructive

Determination of Forward-Biased Safe-Operating-Area Limits for Power

Transistors, Conference Record, IEEE IAS Annual Meeting, Los Angeles, CA,

Oct. 3-6, 1977, pp. 666-673 (1977).

49. Russell, T. J., Leedy, T. F., and Mattis, R. L., A Comparison of

Electrical and Visual Alignment Test Structures for Evaluating Photomask

Alignment in Integrated Circuit Manufacturing, Tech. Digest, Int. Electron

Devices Meeting, Washington, D.C., Dec. 5-7, 1977, pp. 7A-7F (1977).

50. Ruthberg, S., Hermetic Test Procedures and Standards for Semiconductor

Electronics. ASTM STP 624, Nondestructive Testing Standards - A Review, H.

Berger Ed., pp. 246-259 (Am. Soc. for Testing and Matls., Philadelphia, PA,

1977)

51. Ruthberg, S., Gas Infusion into Doubled Hermetic Enclosures, IEEE Trans.

Parts, Hybrids, and Packaging PHP-13, 110-116 (197/).

52. Ruthberg, S., Neff, G. R., and Martin, B. D., Radioisotope Hermetic Test

Precision, Proc. 1977 Int. Microelectronics Symp., Baltimore, MD, Oct. 24-

26, 1977, pp. 131-137 (1977).

53. Sawyer, D. E., Solar Cell Measurement Technique Development and Other

Services, Proc. Photovo I ta i cs Program Semi-Annual Review, Adv. Materials

R&D Branch, Golden, CO, Oct. 4-6, 1977, pp. 708-713 (1977).

54. Sawyer, D. E., and Berning, D. W., Semiconductor Measurement Technology: A

Laser Scanner for Semiconductor Devices, NBS Spec. PubI . 400-24 (1977).
1977

55. Sawyer, D. E., Berning, D. W., and Lewis, D. C., Laser Scanning of Active

Integrated Circuits and Discrete Semiconductor Devices, Solid State

Technology 20 (6), 37ff (1977).

56. Schafft, H. A., Semiconductor Measurement Technology: Reliability

Technology for Cardiac Pacemakers II - A Workshop Report, NBS Spec. PubI

400-42 (1977).

57. Spicer, W. E., Lindau, I., and Helms, C. R., Frontiers in Surface and

Interface Analysis, R/D: Research/Development 28(12), 20-31 (1977).

58. Swyt, D. A., An NBS Physical Standard for the Calibration of Photomask

Linewidth Measuring Systems, Proc. Soc. Photo-Optical Instrum. Engrs.,

Effective Utilization of Optics in Quality Assurance 129, 98-105 (1977).

59. Swyt, D. A., and Rosberry, F. W., A Comparison of Some Optical Microscope

Measurements of Photomask Linewidths, Solid State Technology 20 (8), 70-75

(1977)

60. Swyt, D. A., Rosberry, F. W., and Nyyssonen, D., Calibration of Optical

Microscopes for Photomask Linewidth Measurements, Proc. Microelectronics

Seminar - Interface ’77, Monterey, CA, Oct. 5-7, 1977, pp. 131-144 (1977).

61. Tressler, R. E., Stach, J., and Metz, D., Gas Phase Composition

Considerations in the Thermal Oxidation of Silicon in CI-H-0 Ambients, J. Electrochem. Soc. 124, 607-609 (1977).

62. Weglein, R. D., and Wilson, R. G., Image Resolution of the Scanning

Acoustic Microscope, Appl. Phys. Letters 31, 793-796 (1977).

63. Weglein, R. D., Wilson, R. G., and Bonnell, D. M., Scanning Acoustic

Microscopy - Application to Fault Detection, 15th Annual Proceedings,

Reliability Physics 1977, Las Vegas, NV, April 12-14, 1977, pp. 37-43

(1977)

64. Wilson, R. G., Dunlap, H. L., and Jamba, D. M., Angular Sensitivity of

Controlled Implanted Doping Profiles. Semiconductor Silicon/1977, H. R.

Huff and E. SirtI Eds., pp. 1023-1034 (Electrochemical Society, Princeton,

NJ, 1977).

65. Wilson, R. G., Weglein, R. D., and Bonnell, D. M., Scanning Acoustic

Microscopy for Integrated Circuit Diagnostics. Semiconductor Silicon/1977,

H. R. Huff and E. SirtI Eds., pp. 431-440 (Electrochemical Society,

Princeton, NJ, 1977).

66. Young, R. D., Length Calibrations in the Micrometer and Sub-Micrometer

Range, Ann. CIRP 25, 245-250 (1977).

46
1976

Publications for the Year 1976

1. Albers, J., Semiconductor Measurement Technology: The Destructive Bond

Pull Test, NBS Spec. Publ. 400-18 (1976).

2. Blackburn, D. L., Rubin, S., and Rogers, G. J., Measurements of* Power

Transistor Thermal Instabilities, Stable Hot-Spots, and Second-Breakdown,

Tech. Digest, 1976 Int. Electron Devices Meeting, Washington, D.C., Dec. 6-

8, 1976, pp. 151-154 (1976)

3. Buehler, M. G., Semiconductor Measurement Technology: Microelectronic Test

Pattern NBS-3 for Evaluating the Resistivity-Dopant Density Relationship

of Silicon, NBS Spec. Publ. 400-22 (1976).

4. Buehler, M. G., Semiconductor Measurement Technology: Defects in PN

Junctions and MOS Capacitors Observed Using Thermally Stimulated Current

and Capacitance Measurements - Videotape Script, NBS Spec. Publ. 400-26

(1976)

5. Buehler, M. G., and Phillips, W. E., A Study of the Gold Acceptor in a Silicon p+n Junction and an n-type MOS Capacitor by Thermally Stimulated

Current and Capacitance Measurements, Solid-State Electronics 19, 777-788

(1976)

6. Buehler, M. G., and Sawyer, D. E., Microelectronic Test Patterns for Use

in Procuring Reliable, Custom Integrated Circuit Chips, 1976 Government

Microcircuit Applications Conf . Digest of Papers, Orlando, FL, Nov. 9-11,

1976, pp. 62-65 (1976).

7. Buehler, M. G., and Thurber, W. R., A Planar Four-Probe Test Structure for

Measuring Bulk Resistivity, IEEE Trans. Electron Devices ED-23, 968-974

(1976) .

8. Galloway, K. F., and Buehler, M. G., The Application of Test Structures

and Test Patterns to the Development of Radiation Hardened Integrated

Circuits: A Review, NBSIR 76-1093 (1976).

9. Galloway, K. F., Leedy, K. 0., and Keery, W. J., Electron-Beam-Induced

Currents in Simple Device Structures, IEEE Trans. Parts, Hybrids, and

Packaging PHP-12, 231-236 (1976).

10. Galloway, K. F., Leedy, K. 0., and Keery, W. J., Electron-Beam-Induced

Currents in Simple Device Structures, Proc. 26th Electronic Components

Conf., San Francisco, CA, April 26-28, 1976, pp. 257-262 (1976).

11. Goodman, A. M., Semiconductor Measurement Technology: Safe Operation of

Capacitance Meters Using High Applied-Bias Voltage, NBS Spec. Publ. 400-

34 (1976)

12. Goodman, A. M., Safe Operation of Capacitance Meters Using High AppliedBias Voltage, RCA Rev. 37, 491-514 (1976).

47
13. Harman, G. G., The Use of Acoustic Emission in a Test for Beam Lead Bond

Integrity, 14th Annual Proceedings, Reliability Physics 1976, Las Vegas,

NV, April 20-22, 1976, pp. 86-97 (1976).

14. Hower, P. L., Blackburn, D. L., Oettinger, F. F., and Rubin, S., Stable

Hot Spots and Second Breakdown in Power Transistors, PESO ’76 Record, IEEE

Power Electronics Conference 1976, Cleveland, OH, June 8-10, 1976, pp. 234

246 (1976)

15. Jerke, J. M., Hartman, A. W., Nyyssonen, D., Rosberry, F. W., Swing, R. E. Swyt, D. A., and Young, R. D., Accurate Linewidth Measurements at the

National Bureau of Standards, Proc. Microelectronics Seminar - Interface

’76, Monterey, CA, Oct. 3-5, 1976, pp. 51-59 (1976).

16. Johannessen, J. S., Spicer, W. E., and Strausser, Y. E., Use of Auger

Electron Spectroscopy to Determine the Structure of Silicon Oxide Films,

Semiconductor Measurement Technology: ARPA/NBS Workshop IV, Surface

Analysis for Silicon Devices, NBS Spec. Publ. 400-23 (1976).

17. Johannessen, J. S., Spicer, W. E., and Strausser, Y. E., Auger Depth

Profiling of Interfaces in MOS and MNOS Structures, J. Vac. Sci. Technol.

13, 849-855 (1976).

18. Johannessen, J. S., Spicer, W. E., and Strausser, Y. E., A Study of the

Chemical Composition of MOS and MNOS Structures by Auger Electron

Spectroscopy, Thin Solid Films 32, 311-314 (1976).

19. Kasdan, H. L., and George, N., Linewidth Measurement by Diffraction

Pattern Analysis, Proc. Soc. Photo-Optical Instrum. Engrs., Developments

in Semiconductor Microlithography 80, 54-63 (1976).

20. Keery, W. J., Leedy, K. 0., and Galloway, K. F., Electron Beam Effects on Microelectronic Devices, Scanning Electron Microscopy/1976, Toronto,

Canada, April 5-9, 1976, pp. 507-514 (1976).

21. Kenney, J. M., Semiconductor Measurement Technology: Permanent Damage

Effects of Nuclear Radiation on the X-Band Performance of Silicon Schottky

Barrier Microwave Mixer Diodes, NBS Spec. Publ. 400-7 (1976).

22. Lieberman, A. G., Semiconductor Measurement Technology: ARPA/NBS Workshop

IV. Surface Analysis for Silicon Devices, NBS Spec. Publ. 400-23 (1976).

23. Lieberman, A. G., Introductory Concepts for Silicon Surface Analysis,

Semiconductor Measurement Technology: ARPA/NBS Workshop IV, Surface

Analysis for Silicon Devices, NBS Spec. Publ. 400-23 (1976).

24. Mayo, S., Galloway, K. F., and Leedy, T. F., Radiation Dose Due to

Electron-Gun Metallization Systems, IEEE Trans. Nucl. Sci. NS-23, 1875-

1880 (1976)

25. Mayo, S., Keller, R. A., Travis, J. C., and Green, R. B., Detection of

Sodium Trace Contamination in Furnace Atmospheres at lOOOC, J. AppI . Phys.

47, 4012-4016 (1976)
1976

26. Novotny, D. B., Photoresist Exposure - Measurement and Control, Proc. Soc.

Photo-Optical Instrum. Engrs., Developments in Semiconductor

Microlithography 80, 9-13 (1976).

27. Oettinger, F. F., Blackburn, D. L., and Rubin, S., Thermal

Characterization of Power Transistors, IEEE Trans. Electron Devices ED-23,

831-838 (1976).

28. Sawyer, D. E., and Berning, D. W., Semiconductor Measurement Technology:

Laser Scanning of Active Semiconductor Devices - Videotape Script, NBS

Spec. Publ. 400-27 (1976).

29. Sawyer, D. E., and Berning, D. W., Thermal Mapping of Transistors With a Laser Scanner, Proc. IEEE 64, 1634-1635 (1976).

30. Sawyer, D. E., and Berning, D. W., Mapping Non I i near! ties Over the Active

Regions of Semiconductor Devices, Proc. IEEE 64, 1635-1637 (1976).

31. Sawyer, D. E., and Berning, D. W., Laser Scanning of MOS IC’s Reveals

Internal Logic States Nondestructi vely , Proc. IEEE 64, 393-394 (1976).

32. Schafft, H. A., Semiconductor Measurement Technology: ARPA/NBS Workshop

III. Test Patterns for Integrated Circuits, NBS Spec. Publ. 400-15 (1976).

33. Schafft, H. A., Semiconductor Measurement Technology: NBS/FDA Workshop,

Reliability Technology for Cardiac Pacemakers 400-28 (1976).

34. Strausser, Y. E., and Johannessen, J. S., An Auger Electron Spectroscopy

Study of Si Spectra from SiO, Si02, and Si3N4, Semiconductor Measurement

Technology: ARPA/NBS Workshop IV, Surface Analysis for Silicon Devices,

NBS Spec. Publ. 400-23 (1976).

35. Swing, R. E., The Theoretical Basis of a New Optical Method for the

Accurate Measurement of Small Line-Widths, Proc. Soc. Photo-Optical

Instrum. Engrs. Developments in Semiconductor Microlithography 80, 65-77

(1976)

36. Swyt, D. A., NBS Program in Photomask Linewidth Measurements, Solid State

Technology 19 (4), 55-61 (1976).

37. Taylor, N. J., Johannessen, J. S., and Spicer, W. E., Crater-Edge

Profiling in Interface Analysis Employing Ion-Beam Etching and AES, AppI

Phys. Letters 29, 497-499 (1976).

38. Weglein, R. D., Acoustic Properties of Sputtered Glass at Microwave

Frequencies, Solar Cells 29, 277-279 (1976).

39. Wilson, R. G., Planar and Axial Channeling of 800 keV As in <110> Silicon,

AppI. Phys. Letters 29, 770-772 (1976).

49
Publications for the Year 1975

1. Blackburn, D. L., An Electrical Technique for the Measurement of the Peak

Junction Temperature of Power Transistors, 13th Annual Proceedings,

Reliability Physics 1975, Las Vegas, NV, April 1-3, 1975, pp. 142-150

(1975) .

2. Blackburn, D. L., and Oettinger, F. F., Transient Thermal Response

Measurements of Power Transistors, IEEE Trans. Industrial Electronics and

Control Instrumentation IECI-22, 134-141 (1975).

3. Buehler, M. G., David, J. M., Mattis, R. L., Phillips, W. E., and Thurber,

W. R., Semiconductor Measurement Technology: Planar Test Structures for

Characterizing Impurities in Silicon, NBS Spec. Publ. 400-21 (1975).

4. Ciarlo, D. R., Schultz, P. A., and Novotny, D. B., Automated Inspection of

IC Photomasks, Proc. Soc. Photo-Optical Instrum. Engrs., Photofabrication

Imagery 55, 84-89 (1975)

5. Duffy, M. T., Zanzucchi, P. J., and Cullen, G. W., Method to Determine

Quality of Sapphire, NBS-GCR 76-61 (1975).

6. Galloway, K. F., Keery, W. J., and Leedy, K. 0., Integrated Circuit Damage

Resulting from SEM Examination, Proc. 25th Electronic Components Conf .

,

Washington, D.C., May 12-14, 1975, pp. 263-266 (1975).

7. Jerke, J. M., Semiconductor Measurement Technology: Optical and

D i mens iona I -Measurement Problems with Photomasking in Microelectronics,

NBS Spec. Publ. 400-20 (1975).

8. Jesch, R. L., and Hoer, C. A., Characterization of a High Frequency Probe

Assembly for Integrated Circuits Measurements, NBS Tech. Note 663 (1975).

9. Johannessen, J. S., Chemical Shifts of Auger Lines Seen in SiOx and Si02-

Si Interfaces, Faraday Discuss. Chem. Soc. 60, 306-309 (1975).

10. Johannessen, J. S., Electron Beam Effects in AES of Silicon Oxides,

Faraday Discuss. Chem. Soc. 60, 313-316 (1975).

11. Johannessen, J. S., Spicer, W. E., and Strausser, Y. E., Phase Separation

in Silicon Oxides as Seen by Auger Electron Spectroscopy, AppI . Phys.

Letters 27, 452-454 (1975)

12. Kraft, R., Finite Difference Techniques for Diffusion and Redistribution

Problems with Segregation-Type Boundary Conditions, Proc. AICA Int. Symp.

on Computer Methods for Partial Differential Equations, Bethlehem, PA,

June 17-19, 1975, pp. 328-334 (1975).

13. Lewis, D. C., On the Determination of the Minority Carrier Lifetime from

the Reverse Recovery Transient of pnR Diodes, Solid-State Electronics 18,

87-91 (1975).
14. Lieberman, A. G., Problems in Using Surface Analysis Techniques for the

Depth Profiling of Microelectronic Materials, Tech. Digest, 1975 Int.

Electron Devices Meeting, Washington, DC, Dec. 1-3, 1975, pp. 126-129

(1975)

15. Mattis, R. L., and Buehler, M. G., Semiconductor Measurement Technology: A

BASIC Program for Calculating Dopant Density Profiles from CapacitanceVoltage Data, NBS Spec. Publ. 400-11 (1975).

16. Pease, R. L., Galloway, K. F., and Stehlin, R. A., Radiation Damage to

Integrated Injection Logic Cells, IEEE Trans. Nucl. Phys. NS-22, 2600-2604

(1975)

17. Rogers, G. J., Sawyer, D. E., and Jesch, R. L., Semiconductor Measurement

Technology: Measurement of Transistor Scattering Parameters, NBS Spec.

Publ. 400-5 (1975).

18. Rubin, S., Thermal Resistance Measurements on Monolithic and Hybrid

Darlington Power Transistors, PESC *75 Record, IEEE Power Electronics

Specialists Conf., 1975, Culver City, CA, June 9-11, 1975, pp. 252-261

(1975) .

19. Rudenberg, H. G., Automated Integrated Circuit Processing and Assembly,

NBS-GCR 76-64 (1975)

20. Sawyer, D. E., and Berning, D. W., Laser Scanning of Active Semiconductor

Devices, Tech. Digest, 1975 Int. Electron Devices Meeting, Washington, D.C.

Dec. 1-3, 1975, pp. 111-114 (1975).

21. Sher, A. H., Semiconductor Measurement Technology: Improved Infrared

Response Technique for Detecting Defects and Impurities in Germanium and

Silicon p-i-n Diodes, NBS Spec. Publ. 400-13 (1975).

22. Steigerwalt, S. T., and Lagnado, I., The CCD as a Test Structure for

Semiconductor Process Control, Microelectronics J. 7, 23-29 (1975).
1974

Publications for the Year 1974

1. Blackburn, D. L., and Oettinger, F. F., Transient Thermal Response

Measurements of Power Transistors, PESC ’74 Record, IEEE Power Electronics

Specialists Conference 1974, Murray Hill, NJ, June 10-12, 1974, pp. 140-

148 (1974).

2. Buehler, M. G., Semiconductor Measurement Technology : Microelectronic Test

Patterns: An Overview, NBS Spec. PubI . 400-6 (1974).

3.. Bui I is, W. M., Standard Measurements of the Resistivity of Silicon by the

Four-Probe Method, NBSIR 74-496 (1974)

4. Ehrstein, J. R., Improved Surface Preparation for Spreading Resistance

Measurements on p-Type Silicon, Semiconductor Measurement Technology:

Spreading Resistance Symposium, NBS Spec. Publ. 400-10 (1974).

5. Ehrstein, J. R., Semiconductor Measurement Technology: Spreading

Resistance Symposium, NBS Spec. Publ. 400-10 (1974).

6. Forman, R. A., Thurber, W. R., and Aspnes, D. E., Second Indirect Band Gap

in Silicon, Solid-State Communications 14, 1007-1010 (1974).

7. Harman, G. G., Semiconductor Measurement Technology: Microelectronic

Ultrasonic Bonding, NBS Spec. Publ. 400-2 (1974).

8. Harman, G. G., Metallurgical Failure Modes of Wire Bonds, presented as part of a Workshop on Metallurgical Failure Modes, 12th Annual Proceedings,

Reliability Physics 1974, Las Vegas, NV, April 2-4, 1974, pp. 131-141

(1974)

9. Harman, G. G., A Metallurgical Basis for the Non-Destructive Bond PullTest, 12th Annual Proceedings, Reliability Physics 1974, Las Vegas, NV,

April 2-4, 1974, pp. 205-210 (1974).

10. Sandow, P. M., A Transistor with Simultaneously Diffused Emitter and Base,

Solid-State Electronics 17, 404-405 (1974).

11. Schafft, H. A., Semiconductor Measurement Technology: ARPA/NBS Workshop I. Measurement Problems in Integrated Circuit Processing and Assembly, NBS

Spec. Publ. 400-3 (1974).

12. Schafft, H. A., Semiconductor Measurement Technology: ARPA/NBS Workshop II.

Hermeticity Testing for Integrated Circuits, NBS Spec. Publ. 400-9 (1974).

13. Sher, A. H., Semiconductor Nuclear Radiation Detector Studies - A Final

Report, NBSIR 74-626 (1974)

52
Publications for the Year 1973

1. Buehler, M. G., Thermally Stimulated Measurements: The Characterization of

Defects in Silicon p-n Junctions. Semiconductor Silicon/1973, H. R. Huff

and R. R. Burgess Eds., pp. 549-560 (Electrochemical Society, Princeton,

NJ, 1973).

2. Harman, G. G., and Kessler, H. K., The Use of Capacitor Microphones to

Study Vibrations in Microelectronic Ultrasonic Bonding Equipment,

Ultrasonics 11 (1), 5-6 (1973).

3. Kessler, H. K., and Sher, A. H., Microelectronic Interconnection Bonding

with Ribbon Wire, MBS Tech. Note 767 (1973).

4. Leedy, K. 0., Scanning Electron Microscope Examination of Wire Bonds from

High-Reliability Devices, NBS Tech. Note 785 (1973).

5. Oettinger, F. F., and Gladhill, R. L., Thermal Response Measurements for

Semiconductor Device Die Attachment Evaluation, Tech. Digest, 1973 Int.

Electron Devices Meeting, Washington, DC, Dec. 3-4, 1973, pp. 47-50 (1973).

6. Sawyer, D. E., Rogers, G. J., and Huntley, L. F., Measurement of Transit

Time and Related Transistor Characteristics, AFWL TR 73-54 (1973).

7. Schafft, H. A., Methods for Testing Wire-Bond Electrical Connections, NBS

Tech. Note 786 (1973).

8. Schafft, H. A., Failure Analysis of Wire Bonds, 11th Annual Proceedings,

Reliability Physics 1973, Las Vegas, NV, April 3-5, 1973, pp. 98-104

(1973)

9.

Thurber, W. R., Lewis, D. C., and Bui I is, W. M., Resistivity and Carrier

Lifetime in Gold-Doped Silicon, AFCRL-TR 73-0107 (1973).
1972

Publications for the Year 1972

1. Blackburn, D. L., Schafft, H. A., and Swartzendruber, L. J.,

Nondestructive Photovoltaic Technique for the Measurement of Resistivity

Gradients in Circular Semiconductor Wafers, J. Electrochem. Soc. 119, 1773-

1778 (1972).

2. Harman, G. G., and Leedy, K. 0., An Experimental Model of the

Microelectronic Ultrasonic Wire Bonding Mechanism, 10th Annual Proceedings,

Reliability Physics 1972, Las Vegas, NV, April 5-7, 1972, pp. 49-56 (1972).

3. Liu, Y. M., and Coleman, J. A., Radiation Damage Effects by Electrons,

Protons, and Neutrons in Si (Li) Detectors, IEEE Trans. Nucl. Sci. NS-19,

346-352 (1972).

4. Mattis, R. L., and Baroody, A. J., Carrier Lifetime Measurement by the

Photoconducti ve Decay Method, NBS Tech. Note 736 (1972).

5. Oettinger, F. F., and Rubin, S., The Use of Current Gain as an Indicator

for the Formation of Hot Spots due to Current Crowding in Power

Transistors, 10th Annual Proceedings, Reliability Physics 1972, Las Vegas,

NV, April 5-7, 1972, pp. 12-18 (1972).

6. Phillips, W. E., Interpretation of Steady-State Surface Photovoltage

Measurements in Epitaxial Semiconductor Layers, Solid-State Electronics 15,

1097-1102 (1972).

7. Sawyer, D. E., Prevalent Error Sources in Transistor Delay-Time

Measurements, IEEE Trans. Nucl. Sci. NS-19, 121-124 (1972).

8. Schafft, H. A., Wire-Bond Electrical Connections: Testing, Fabrication and

Degradation - A Bibliography 1957-1971, NBS Tech. Note 593 (1972).

9. Schafft, H. A., Testing and Fabrication of Wire-Bond Electrical

Connections - A Comprehensive Survey, NBS Tech. Note 726 (1972).

10. Sher, A. H., and Keery, W. J., Improved Infrared-Response Technique for

Determining Impurity and Defect Levels in Semiconductors, AppI . Phys.

Letters 20, 120-122 (1972).

11. Sher, A. H., Keery, W. J., and Dyson, H. E., Improved Infrared Response

Measurements in Semiconductor Nuclear Radiation Detectors, IEEE Trans.

Nucl. Sci. NS-19, 341-344 (1972).

12. Sher, A. H., Liu, Y. M., and Keery, W. J., Infrared Response Measurements

on Radiation-Damaged Si (Li) Detectors, IEEE Trans. Nucl. Sci. NS-19, 312-

317 (1972).

13. Thurber, W. R., and Bui I is, W. M., Resistivity and Carrier Lifetime in

Gold-Doped Silicon, AFCRL 72 0076 (1972).

54
1971

Publications for the Year 1971

1. Brenner, D. J., A Technique for Measuring the Surface Temperature of

Transistors by Means of Fluorescent Phosphor, NBS Tech. Note 591 (1971).

2. Harman, G, G., and Kessler, H. K., Application of Capacitor Microphones

and Magnetic Pickups to the Tuning and Trouble Shooting of Microelectronic

Ultrasonic Bonding Equipment, NBS Tech. Note 573 (1971).

3. Liu, Y. M., and Coleman, J. A., Electron Radiation Damage Effects in

Silicon Surface-Barrier Detectors, IEEE Trans. Nucl. Sci. NS-18, 192-199

(1971)

4. Marsden, C. P., Tabulation of Data on Semiconductor Amplifiers and

Oscillators at Microwave Frequencies, NBS Tech. Note 597 (1971).

5. Rubin, S., and Oettinger, F. F., Thermal Hysteresis and Its Possible

Effect in Restricting the Hot-Spot-Free Operating Range of Some Power

Transistors, IEEE Trans. Electron Devices ED-18, 393-394 (1971).

6. Sher, A. H., Carrier Trapping in Ge(Li) Detectors, IEEE Trans. Nucl. Sci.

NS-18, 175-183 (1971).

7. Sher, A. H., Croll, W. K., and Thurber, W. R., Determination of Oxygen in

Germanium Below 20 Parts per Billion by Measurements of Lithium Mobility

and Precipitation, Anal. Chem. 43, 1831-1834 (1971).

8. Sher, A. H., and Thurber, W. R., Minority Carrier and Lithium-Ion Drift

Mobilities and Oxygen Concentration in p-Type Germanium, J. Appl. Phys. 42,

4508-4509 (1971).

9. Thurber, W. R., Determination of Deep Impurities in Silicon and Germanium

by Infrared Photoconductivity, NBS Tech. Note 570 (1971).

55
1970

Publications for the Year 1970

1. BulliSi W. M., Measurement Methods for Microcircuits, Paper No. 31, Space

Simulation, NBS Spec. Publ. 336 (1970).

2. Bui I is, W. M., Thurber, W. R., Pyke, T. N., Jr., Ulmer, F. H., and Koenig,

A. L,, Time Shared Computers in Experimental Environments, Instruments and

Control Systems 43(10), 105-110 (1970).

3. Marsden, C. P., Silicon Device Processing, NBS Spec. Publ. 337 (1970).

4. Sher, A. H., Nomographs for Use in the Fabrication and Testing of Ge(Li)

Detectors, NBS Tech. Note 537 (1970).

5. Sher, A. H., and Coleman, J. A., Lithium Driftability in Detector Grade

Germanium, IEEE Trans. Nucl. Sci . NS-17, 125-129 (1970).

6. Sher, A. H., and Keery, W. J., Variation of the Effective Fano Factor in a Ge(Li) Detector, IEEE Trans. Nucl. Sci. NS-17, 39-43 (1970).

7. Thurber, W. R., Determination of Oxygen Concentration in Silicon and

Germanium by Infrared Absorption, NBS Tech. Note 529 (1970).

56
1969

Publications for the Year 1969

1. Bui I is, W, M., Measurement Methods for the Semiconductor Device Industry - A Review of NBS Activity, NBS Tech. Note 511 (1969).

2. Bui I is, W. M., and Scace, R. I., Measurement Standards for Integrated

Circuit Processing, Proc. IEEE 57, 1639-1646 (1969).

3. Bui I is, W. M., Thurber, W. R., Pyke, T. N., Jr., Ulmer, F. H., and Koenig,

A. L., Use of a Time-Shared Computer to Control a Hall Effect Experiment,

NBS Tech . Note 510 (1969)

4. Harman, G. G., Topological Features of Hot Carrier Induced Anisotropic

Breakdown on Silicon Diode Surfaces, J. Res. Natl. Bur. Standards 73A, 321-

331 (1969).

5. Sher, A. H., Lithium-Ion Drift Mobility in Germanium, J. AppI . Phys. 40,

2600-2607 (1969).

57
1968

Publications for the Year 1968

1. Bui I is, W. M., Measurement of Carrier Lifetime in Semiconductors - An

Annotated Bibliography Covering the Period 1949-1967, NBS Tech. Note 465

(1968)

2. Bui I is, W. M., Measurement Problems in Microcircuit Processing, 1968

Government Microcircuits Applications Conference, Digest of Papers, pp.

215-217 (1968).

3. Bui I is, W. M., Brewer, F. H., Kolstad, C. D., and Swartzendruber , L. J.,

Temperature Coefficient of Resistivity of Silicon and Germanium near Room

Temperature, Solid-State Electronics 11, 639-646 (1968).

4. Bui I is, W. M., and Coleman, J. A., Characterization of Germanium and

Silicon for Nuclear Radiation Detectors. Nucleonics in Aerospace, P.

Polishuk Ed., pp. 166-175 (Plenum Press, New York, NY, 1968).

5. Coleman, J. A., Love, D. P., Trainor, J. H., and Williams, D. J., Effects

of Damage by 0.8 MeV - 5.0 MeV Protons in Silicon Surface-Barrier

Detectors, IEEE Trans. Nucl. Sci. NS-15, 363-372 (1968).

6. Coleman, J. A., Love, D. P., Trainor, J. H., and Williams, D. J., LowEnergy Proton Damage Effects in Silicon Surface-Barrier Detectors, IEEE

Trans. Nucl. Sci. NS-15, 482-490 (1968).

7. Mattis, R. L., Phillips, W. E., and Bui I is, W. M., Measurement and

Interpretation of Carrier Lifetime in Silicon and Germanium, AFML-TR 68-81

(1968) .

8. Schafft, H. A., Second Breakdown in Transistors, Proc. Second Symp. on Reliability in Electronics, Budapest, October 1968, pp. 225 (1968).

9. Schafft, H. A., Photovoltaic Method for the Measurement of Resistivity in

Germanium and Silicon, RADC-TR 68-64 (1968).

10. Schafft, H. A., and Needham, S. G., A Bibliography on Methods for the

Measurement of Inhomogeneities in Semiconductors (1953-1967), NBS Tech.

Note 445 (1968)

11. Swartzendruber, L. J., Ulmer, F. H., and Coleman, J. A., Direct Reading

Instrument for Silicon and Germanium Four-Probe Resistivity Measurements,

Rev. Sci. Instrum. 39, 1858-1863 (1968).

58
1967

Publications for the Year 1967

1. Bui I is, W. M., Standard Measurements of the Resistivity of Silicon by the

Four-Probe Method, NASA-CR 86032 (1967)

2. Harman, G. G., and Gordy, L. H., The Use of Semiconductors for the Study

of Boiling Heat Transfer to Low Temperature Liquids, Cryogenics 7, 89-92

(1967)

3. Schafft, H. A., Second Breakdown in Semiconductor Devices - A Bibliography,

NBS Tech. Note 431 (1967).

4. Schafft, H. A., Second Breakdown: A Comprehensive Review, Proc. IEEE 55,

1272-1288 (1967).

59
Publications for the Year 1966

1. Coleman, J. A., and Swartzendruber, L. J., Effective Charge Carrier

Lifetime in Silicon p-i-n Junction Detectors, IEEE Trans. Nucl. Sci. NS-13,

240-244 (1966).

2. Dodge, W. R., Coleman, J. A., and Domen, S. R., A Scattering Chamber for

Use with Cooled Large Area Lithium-Compensated Silicon Radiation Detectors,

Nucl. Instrum. & Meth. 42, 181-187 (1966).

3. Dodge, W. R., Coleman, J. A., Domen, S. R., and Whittaker, J. K., LithiumCompensated Silicon Focal Plane Detectors for Electron Scattering

Spectrometers, Rev. Sci. Instrum. 37, 1151-1159 (1966).

4. Dodge, W. R., Domen, S. R., Leedy, T. F., and Skopik, D. N., Measurement

of the Mean Energy Required to Create an Electron-Hole Pair in Silicon

Between 6 and 77 K, Phys. Rev. Letters 17, 653-655 (1966).

5. Harman, G. G., Avalanche Radiation from the Bulk of Long, Thin, ForwardBiased p+-p-n+ Silicon Diodes, Appl. Phys. Letters 9, 207-209 (1966).

6. Kessler, H. K., Cooler for Semiconductor Light Emitters, Lasers, and

Photodetectors, Rev. Sci. Instrum. 37, 517-518 (1966).

7. Schafft, H. A., Avoiding Second Breakdown, Proc. 13th Int. Scientific

Congress on Electronics, Rome, June 1966, pp. 117-130 (1966).

8. Schafft, H. A., and French, J. C., A Survey of Second Breakdown, IEEE

Trans. Electron Devices ED-13, 613-618 (1966).

9. Schafft, H. A., and French, J. C., Second Breakdown and Current

Distributions in Transistors, Solid-State Electronics 9, 681-688 (1966).

10. Schafft, H. A., Schwuttke, G. H., and Ruggles, R. L., Second Breakdown and

Crystallographic Defects in Transistors, IEEE Trans. Electron Devices ED13, 738-742 (1966).

11. Winogradoff, N. M., and Kessler, H. K., Radiative Recombination Lifetimes

in Laser-Excited Silicon, Appl. Phys. Letters 8, 99-101 (1966).
Publications for the Year 1965

1. Schafft, H. A., and French, J. C., Breakdown Characteristics of

Semiconductor Materials, Electro-Technology 75, 77-82 (1965).
1964

Publications for the Year 1964

1. French, J. C., Bibliography for the Measurement of Bulk Resistivity of

Device Semiconductor Materials for Electron Devices, NBS Tech. Note 232

(1964)

2. Reber, J. M., Potential Distribution in a Rectangular Semiconductor Bar

for Use with Four-Point Probe Measurements, Solid-State Electronics 7, 525-

529 (1964).

3. Schafft, H. A., Average Power Dissipated in a Diode Swept Along Its

Reverse Characteristic, NBS Tech. Note 240 (1964).

4. Swartzendruber, L. J., Correction Factor Tables for Four-Point Probe

Resistivity Measurements on Thin, Circular Semiconductor Samples, NBS Tech.

Note 199 (1964)

5. Swartzendruber, L. J., Calculations for Comparing Two-Point and Four-Point

Probe Resistivity Measurements on Rectangular Bar-Shaped Semiconductor

Samples, NBS Tech. Note 241 (1964).

6. Swartzendruber, L. J., Four-Point Probe Measurement of Non-Uniformities in

Semiconductor Sheet Resistivity, Solid-State Electronics 7, 413-422 (1964).

62
Publications for the Year 1963

1. Harman, G. G., Raybold, R. L., and Meyer, 0. L., Direct Observation of

Charge Storage in the Surface States of Silicon, J. Appl. Phys. 34, 380-

383 (1963).

2. Swartzendruber , L. J., Applications of a Semiconductor-Surface-State

Charge-Storage Device, Solid-State Electronics 6, 59-61 (1963).
Publications for the Year 1962

1. Harman^ G. G., and Higier, T., Some Properties of Dirty Contacts on Semiconductors and Resistivity Measurements by a Two-Terminal Method, J. Appl. Phys. 33, 2198-2206 (1962).

2. Harman, G. G., Higier, T., and Meyer, 0. L., Some Electrical Properties of

the Porous Graphite Contact on p-Type Silicon, J. Appl. Phys. 33, 2206-

2208 (1962).

3. Schafft, H. A., and French, J. C., "Second Breakdown" in Transistors, IRE

Trans. Electron Devices ED-9, 129-236 (1962).

4. Swartzendruber, L. J., Single-Trace Sweep Adapter for Transistor-Curve

Tracers, Rev. Sci. Instrum. 33, 560-562 (1962).
AUTHOR INDEX A

Acevedo,J 78-40, 81-38

Adachi,T 79-1

Albers,

J 76-1, 77-29, 80-1, -2, -3,

81-44, 82-1, -2, -29,

83-

1, -2, -3, -4, -12,

84-

1, -3, -8, -38,

85-

1, -2, -3, -26

Alig,RC 78-73

Aspnes,DE 74-6

Atalar,A 77-1, 78-1, 79-44

Baghdadi,A 81-1, 83-5, -6, -7, -22, -23,

84-4, -5, 85-5

Baroody,AJ 72-4

Bartel ink, DJ 79-27

Barton, JJ 81-55

Bass,JF 83-44

Baum,M 79-2

Baylies,WA 83-8

Bel I, MI 81-22,83-16,-22,-23,

•84-19,-40,

85-14,-15,-19,-27

Benedetto, JM 82-4, 83-13

Bennett, HS 81-2, -3, 82-22

83-9, -10,-11,-30,

84-5, -6,-7,

85-6, -7, -8, -9, -10

Berkowi tz. HL 83-12, 84-2, -8, 85-3

Bern! ng,DW 75-19 , 76-28,-29, -30,-31,

77-54 ,-55, 78- 3, 79-3, -6,

80-4, 81-4, -5, 82-3,-4,

83-20 ,-21, 84- 9

Bhar,TN 79-4

Blackburn, DL 72-1, 74-1, 75-1,-2,

77-

2, -3, -4, -48,

78-

2, -3, -4, -29,

79-

5, -6, 80-4,-32,

81-5, -6, -7, 82-3, -4,

83-20,-21, 84-9,-26,

85-11,-13

Blue,JL 80-59, 81-8,-37,

82-46,-47,-48, 83-4,-14,-15,

84-

3,-10,-46,-47,

85-

35,-41,-42,-43,-44

Bonnell,DM 77-63,-65

Bouldin,CE 85-38

Brenner, DJ 71-1

Brewer, FH 68-3

Brodf uehrer ,BP 84-11

65
Bueh Ler

Buehler,MG 73-1,6 74-2, 75-3,

3, -4, -5, -6, -7, -8, 77-

5, -6, -7, -8, -13, -14, -42,

78-

5

, -6 , -7 , -8 , -40 , -52 , -65

,

79-

7, -8, -10, -13, -28, -29, -42, -47,

80-

5,-6,80-7,-11,

81-

9,-10,-11,-12,-20,

82-

6

Bui I is, WM 67-1, 68-1, -2, -3, -4, -7,

69-1, -2, -3, 70-1, -2,

72-13, 73-9, 74-3,

77-9,-10,-11, 78-9,-10,

79-9, 80-8, -9, -10, -34,

81-

13,-14,-15,-16,-29,

82-

5

Bunding, KA 83-16

C

Candela, GA 81-17, 82-8, 83-19, 84-12

Cannon, CA 78-17,-18

Carpenter,BS 78-66

Carver, GP 79-10,-34, 80-12,-13,

81-18,-19,-20,-40, 82-6,

83-17, 84-13

Cassard,JM 83-13, 84-14,-15

Chandler-Horowitz,D 80-40, 82-7, -8,

83-19, 84-12,

85-12,-15

Chang, TT 79-11, 84-16

Chen,DY 83-20,-21

Cheville,DE 83-44

Christou,A 78-11,-12

Ciarlo,DR 75-4, 78-44,-45,-46

Cohen, EC 81-50, 82-9

Coleman,ES 85-22

Coleman, JA 66-1, -2, -3, 68-4, -5, -6, -11,

70-5, 71-3, 72-3

Comas, J 78-70, 79-38, 80-14,-61, 81-41

Comizzoli,RB 77-12,-34,-35

Corboy,JF 80-16

Cresswel I ,MW 85-22,-24

Croarkin,MC 82-10,-17

Croll,WK 71-7, 78-50

Cullen, GW 75-5, 80-16

Cullins,WA 81-19

D

Das, MB 78-59

Dat,R 79-4

Davey,JE 78-12

David,JM 75-3, 77-13

DeBlasio,R 80-15

Devaney,JR 77-14

Dickey,DH 79-12

Dietrich, HB 78-30, 79-30

Dobrott,RD 77-15 66
Dodge

Dodge, MJ 84-17

Dodge, WR 66-2, -3, -4

Doggett,MR 78-37

Domen,SR 66-2, -3, -4

Downing,RG 84-18

Duffy, MT 75-5, 78-72,-73, 80-16

Dumin,DS 79-13

Dun lap, HL 77-64, 78-71

Dyson, HE 72-11 E

Ehrsteln,JR 74-4, -5, 77-16, 79-12,-14,

80-

17,-18,-19,

81-

15,-21,-44,

84-18, 85-13

Erickson,NE 77-17

Evans, WH 77-43, 78-38, 79-35

F

Fedotowsky,A 80-35, 81-31

Filliben,JJ 80-55,-56, 81-54

Fine,J 81-17

Fleming,RF 84-18

Forman, RA 74-6, 80-20, 81-1,-22,-23,

82-39,-43, 83-22,-23,

84-

19,-20,

85-

14,-15,-16,-19

Forman, S 80-15

French, JC 62-3, 64-1, 65-1, 66-8, -9,

77-18, 83-24

Frisch,RC 81-36, 82-23

Fuoss,DE 85-9,-10

Furumoto,HW 80-37

G

Gaitan,M 83-42, 84-21,-23

Galloway,KF 75-6,-15,

76-

8, -9, -10, -20, -24,

77-

10,-19,-20,

78-

13,-14,-15,

79-

4,-15,-16,-17,

80-

21, 81-7,-17,-43,

82-4, 83-13,-24,-28,

84-

11,-22,-23,

85-

17,-18,-23,-33,-35

Garner, CM 77-30

Geist,J 81-24, 84-29

George,N 76-19

Gibbons, JF 78-25, 79-27

G1 I si nn,D 79-18

Giuntini,R 80-46

Gladden, WK 85-5

Gladhill,RL 73-5

Glendinning,WB 83-44, 85-47

67
Go Ld

Gold,RB 79-27

Goldsmith, N 79-19

Goodman, AM 76-11,-12, 77-

21 , -22 , -23 , -24 , -25 , -37

,

78-

31,79-20

Gordy,LH 67-2

Grant, SD 78-7

Grant, TC 84-39, 85-37

Green, RB 76-25

Grunthaner,FJ 77-26, 78-16, 79-21,-22,

80-22,-23,-57, 81-55

Grunthaner ,PJ 79-21,-22

Guenzer,GC 81-30

H

Ham, WE 77-27, 80-16,-24

Harman, GG 62-1, -2, 63-2, 66-5, 67-2,

69-4, 71-2, 72-2, 73-2,

74-7, -8, -9, 76-13,

77-

28,-29, 78-17,-18,

79-23,-24, 80-25, 81-25,

82-

11,-12,-13,-14,-15,

83-

25,84-24

Harm! son, KA 82-15

Harner,FL 85-34

Hartman, AW 76-15, 77-32

Hasegawa,S 80-26

Helms,CR 77-30,-33,-57,

78-

19,-20,-21,-22,-58,

79-

1,-25,-26,-56,-57,

81-26,-51

Herman, D 81-38

Higier,T 62-1, -2

Hi I ten, JS 78-23

Hinkley,JA 83-26, 84-25

Hoer,CA 75-8

Hogan, S 80-15, 82-16

Hook, HO 77-37, 78-31

Horowitz,D - see Chandler-Horowitz

Hower,PL 76-14, 84-26

Huntley,LF 73-6

I

Imhoff,EA 85-19

J

Jamba, DM 77-31,-64, 78-24,-71, 82-49

Jenkins,W 78-12

Jerke,JM 75-7, 76-15, 77-32, 78-48,

79-40, 80-27, 82-17,-18

Jesch,RL 75-8,-16

Johannessen, JS 75-9,-10,-11,

76-

16,-17,-18,-34,-37,

77-

33, 78-19,-25,-61 68
Johnson, NM 78-20,-21, 79-26,-27, 82-19

Johnson

K

Kafadar,K 83-43, 84-43,-44

Kahn, AH 81-37, 82-20, 83-27, 84-19

Kao,CY 84-39, 85-37

Kasdan, HL 76-19, 80-28

Keenan, JA 77-15

Keery,WJ 70-6, 72-10,-11,-12, 75-6,

76-9,-10,-20, 77-14,-32

Keller,RA 76-25

Kenney, JM 76-21, 80-29

Kern,W 77-34,-35

Kessler, HK 66-6,-11, 71-2, 73-2, -3,

78-54,-55, 79-48,-49,

80-50,-51, 81-46

Kirk, CP 85-20

Klein, JD 81-55

Koenig,AL 69-3, 70-2

Kolstad,CD 68-3

Kompfner,R 77-36

Kowalski,P 81-27, 84-27

Koyama,RY 77-3, 78-26,-27,-28,-29,

-30,-39,-41,

79-4,-28,-29,-42, 80-39

Kraft, R 75-12, 79-18

Kratz,HD 84-20

Kuczer,P 77-37, 78-31

L

Lagnado,! 75-21

Lankford, WF 80-30, 81-27,-46, 84-27

Lantz,MD 83-28

Larrabee,GB 77-15, 79-30

Larrabee,RD 78-4,-32,-33,

80-31,-32,-33,-34,

80-36,-45, 81-23,-28,-29,

82-44, 83-29,-31, 84-28,-40

Lederer,PS 78-23

Lee,FC 83-20,-21

Leedy,K0 72-2, 73-4, 75-6, 76-9,-10,-20,

77-14,-38,-39

Leedy,TF 66-4, 76-24, 77-49, 78-34,-39,

79-31, 81-30

Lehovec,K 80-35, 81-31

Lewis,BF 79-21,-22, 80-22,-23

Lew is, DC 73-9, 75-13, 77-55

Li,SS 77-40,-41, 78-35, 79-32,

81-32,-33,-34

Lie,L 85-21

Lieberman,AG 75-14, 76-22,-23

Lin,HC 85-33

Lin,JF 81-33,

Linares,LC 81-33,-34

Lindau,! 77-30,-57

Linholm,LW 79-33,-34, 80-12, 69
Li nho Lm

(cont

81-

82-9,-10,-11,-35,-36,-39,-40,

83-31,-32,-40,-52,

34 , -35 , -39 , -40 , -43 , -44

,

84-

31,-37,-43,-44,-48,

85-

21 , -22 , -23 , -24 , -28 , -33 , -34 , -47

Liu,YM 71-3, 72-3,-12, 78-30,-34,-67,

80-55,-56, 81-17,-54

Lonky,M 78-40

Love, DP 68-5, -6

Lowney,JR 80-36, 81-3,-24,-37,

82-20,-21,-22,

83-

30,-31 , -27,-29,-37,-38,

84-

29,-30,-45,

85-

25,-27,-39

Lucatorto,TB 80-37, 82-24

Luther, GG 82-24

M

Ma,Y 85-38

Madhukar,A 79-21,-22, 80-22,-23

Maj umder,KS 78-60

March iando,JF 84-47, 85-26

Marsden,CP 70-3, 71-4, 78-36

Marshal I, GM 82-40

Marti n,BD 77-52

Maserjian,J 77-26, 78-16, 79-21,-22,

80-22,-23

Mattis,RL 68-7, 72-4, 75-3,-14,

77-42,-49, 78-37,-67,

80-55,-56, 81-20,-36,-54,

82-6,-23, 83-32,-33

Maxwell, DA 78-52,79-46,-47

Mayer, A 79-19

Mayo,S 76-24,-25, 77-43,

78-

14,-15,-38,-39,

79-

16,-17,-35,-37,

80-

37,-40, 82-24,

83-22,-23, 84-19,

85-14,-16,-27

Mayo-Wel ls,JF 78-23

Mazer, JA 84-31, 83-34,-35,-40,

85-21,-23,-28

McCarthy, D 78-40, 81-38

McIlrath,TJ 80-37

McLane,GF 81-30

Metz,D 77-61

Meyer, OL 63-1

Miller,J 77-30

Mitchell,MA 81-39,-40

Moore, BA 84-32

Myers, DR 78-30,-41,-42,-43,-71,

79-

36,-37,-38,

80-

38,-39,-40,-41,

81-

22,-23,-41,-44,

84-38, 85-15

70
Needham

N

Needham, SG 68-10

Neff,GR 77-52

Nelson,G 78-12

Novotny,DB 75-4, 76-26, 77-44,

78-44,-45,-46,

80-3,-42, 81-42

Nuss,G 80-15

Nyyssonen,D 76-15, 77-32,-45,-46,-60,

78-

47,-48,-64,

79-

39,-40, 80-43,-44,

82-5,-25,-26,-27,-28,

84-

33,-34,

85-

20,-29,-30,-31

0

Oettinger,FF 71-5, 72-5, 73-5, 74-1,

75-2, 76-14,-27, 77-3,

78-29,-49, 79-41,-45,

80-45, 82-29,

84-26,-35, 85-32

Oliver,JD 84-40

Oroshnik,J 78-50

P

Pande,KP 83-36, 84-36

Partlow,WD 85-22

Patrick,S 80-46

Pease, RL 75-15

Peckerar,MC 81-43

Perloff,DS 81-12

Phillips,WE 68-7, 72-6, 73-9, 75-3,

76-5, 78-30,-41,-42,

79-36,-42, 80-39,

81-23,-28, 82-30,-44,

83-37,-38, 84-45

Plummer,JD 78-25

Post,H 80-15

Postek,MT 85-31

Pramanik,D 83-34,-35, 85-21

Proctor, SJ 82-31,-32, 83-39,-40

Pyke,TN,Jr. 69-3, 70-2

Q

Quate,CF 77-1,-36,-47, 79-43,-44, 80-47

R

Radack,DJ 85-33

Raybold,RL 63-1

Reber,JM 64-2

Reeve, CP 81-36 71
Rei mann Reimann,CT 78-52, 79-47

Robbins,TC 81-7

Roenker,KP 84-37, 85-34,

Rogers, GJ 73-6, 75-16, 76-2, 77-3

Roitman,P 77-19,-20, 78-51, 79-17,-37,

80-40, 81-44, 83-3, 84-38,-47,

85-26,-35

Rosberry,FW 76-15, 77-59,-60, 78-64

Ross,R 80-15

Rubin, S 71-5, 72-5, 75-17, 76-2,-14,-27,

77-4,-48, 79-45, 80-13, 84-26

Rudenberg,HG 75-18

Ruggles,RL 66-10

Russel I, TJ 77-49, 78-52, 79-34,-46,-47,

80-

12, 81-40,-46, 82-33,

83-

41,-42, 84-21,-23, 85-45

Ruthberg,S 77-50,-51,-52, 80-48,-49,

81-

45,-50, 82-9,-34,-35,-36,

84-

32

S

Sandow,PM 74-10

Sawyer, DE 72-7, 73-6, 75-16,-19,

76-

6,-28,-29,-30,-31,

77-

7,-53,-54,-55,

78-

53,-54,-55,

79-

48,-49,-50,-55,

80-

50,-51, 81-46

Saxena,AN 83-34,-35, 84-39,

85-21,-28,-37

Scace,RI 69-2, 78-56, 79-51,-52,

80-10,-52, 81-16,-47,-48,

82-37, 83-8,-24

Schafft,HA 62-3, 64-3, 65-1,

66-7, -8, -9, -10, 67-3, -4,

68-8, -9, -10, 72-1, -8, -9,

73-7, -8, 74-11,-12,

76-32,-33, 77-56,

78-

54,-55,-57,

79-

48,-49,-50,-53,-54,-55,

80-

15,-30,-51,

81-

27,-46,-49,-50,

82-

16,-38,* 83-45, 84-27,-39,

85-36,-37

Scheibner,EJ 78-61

Schultz, PA 75-4

Schwarz, SA 77-30, 78-19,-20,-58,

79-26,-56,-57, 81-26,-51

Schwuttke,GH 66-10

Seabaugh,AC 81-21, 83-36, 84-36,-40

Sher,AH 69-5, 70-4, -5, -6, 71-6, -7, -8,

72-10,-11,-12, 73-3, 74-13, 75-20

Si mens, DS 84-18

Skopik,DN 66-4

Spicer, WE 75-11, 76-16,-17,-18,-37,

77-

30,-33,-57,

78-

19,-20,-21,-22,-25,-58,

79-

26, 81-26,-51

72
Stach

Stach,J 77-61, 78-59

Stahl bush, RE 82-39

Sta 1 I ard, BR 84-18

Stamps, B 78-40

Stehlin,RA 75-15

Stei gerwa I t,ST 75-21

Stern, EA 85-38

Strausser,YE 75-11, 76-16,-18,-27,-34,

77-33, 78-22,-60,-61

Suehle,JS 82-40, 83-43,

84-41,-42,-43,-44

SuIouff,RE 78-62, 79-58

Swartzendruber,LJ 62-4, 63-2,

64-4, -5, -6, 66-1,

68-3,-11, 72-1

Swing, RE 76-15,-35, 77-32

Swyt,DA 76-15,-36, 77-58,-59,-60,

78-63,-64

T

Taylor,NJ 76-37, 78-25, 81-26,-51

Teng,KW 81-33

Thomas, DB 80-53, 81-52,-53,

82-41,-42

Thurber,WR 69-3, 70-2, -7, 71-7, -8, -9,

72-13, 73-9, 74-6,

75-3, 76-7, 77-8,-41,

78-7, -8, -33, -65, -66, -67,

80-

33,-34,-55,-56,

81-

23,-28,-29,-54,

82-

43,-44, 83-31,-38,

84-30,-45, 85-39

Till,LJ 82-23

Trainer, JH 68-5, -6

Travis, JC 76-25

Tressler,RE 77-61, 78-59

Tsai,S 83-34,-35

U

Ulmer, FH 68-11, 69-3, 70-2

V

Varner, RN 82-10,-17

Vasquez,RP 79-21,-22, 80-22,-57, 81-55

Vezzetti,CF 78-23

Vi eweg-Gutber I et, FG 77-11, 83-8

W

Wachnik,RA 84-13

Waksman,D 81-56, 82-45

Weglein,RD 76-39, 77-62,-63,-65,

78-68,-69, 79-59,-60, 73
Weg Lei

(cont

80-62, 81-58, 82-50

Weitzel,CE 77-25

Wendell,CE 82-18

Whittaker,JK 66-3

Wickramasi nghe,HK 77-1, 79-44

Wilkens,N 78-12

Wi I I iams,DJ 68-5, -6

Wilson, CL 79-38, 80-58,-59, 81-8,-37,

82-

46,-47,-48,

83-

3, -4, -14, -15, -42,

84-

3 , -7 , -10 , -11', -46 , -47

,

85-

17 ,-18,-35, -40 , -41 , -42 , -43 , -44 , -45

Wilson,RG 76-38, 77-62,-63,-64,-65,

78-43,-69,-70,-71, 79-60,

80-

14,-41,-61,-62,-69,

81-

41,-57,-58, 82-49,-50,

Wl nogradoff ,NM 66-11

Witte, LC 85-17,-18,-46

Y

Yao,CT 85-33

Yen,D 82-51,-52, 83-44, 84-48,

85-24,-47

Young, RD 76-15, 77-32,-66

Younkins,CD 84-39

Z

Zamini,N 80-23

Zanzucchi,PJ 75-5, 78-72,-73, 80-16

Zimmertnan,DD 83-45

Zucker,R 83-33

74
TOPIC INDEX

A

absorption coefficient 70-7

accelerated stress test 79-58

test 79-50,-55

accreditation 81-53,-56, 82-42,-45

accuracy 83-19

of film i ndex 82-8

acoustic application 78-68

emission 76-13, 77-28, 78-23, 79-23,-24, 80-25, 81-25,

82-11,-13,-14,-15

gray scale 79-60

imaging 78-69

microscopy 77-1,-36,-47, 79-43,-44, 80-47,-62, 81-58, 82-50

property 76-39

radiation 77-36

sensor 81-25

signature 79-59, 80-62, 81-58, 82-50

wave propagation 80-47

active device 76-29,-31, 77-55

adaptive method 80-59

additivity law 76-26

adhesion 77-29, 83-26

adsorption 83-16

isotherm 84-25

AES 76-34

alignment angle 80-60

tolerance 78-44,-45,-46

alkali contamination 78-38

alpha track 78-66

A I /Si contact 83-34, 84-31, 85-28

meta I I i zat i on 83-35

A I /Si 02 interface 78-60,-61

aluminum 74-8, 77-25

doped silicon 80-18

oxide hum is tor 80-26

oxide interlayer 81-17

wire 72-2, 73-3, -4 ammon i a 62-2

amorphous Si 02 79-22

material 85-38

amplifier 70-3

AMS 79-59

analysis 80-35

analytic method 81-1, 83-5

analytical beam technique 76-22

angular spectrum 80-47

approach 78-1

anisotropy 66-5, 69-4

anneal model 83-3

annealing 78-43, 80-39,-41, 81-22

anti ref lecti ve chromium 82-18

apodization function 84-4

apparatus 77-23,-24, 78-31, 80-37

arsenic 80-60

diffusion 74-10
B

arsenic implant 76-38, 78-70, 80-61

profile 83-3

ASTM 69-2

standards 80-52

atomic profile 84-3

Auger 81-17

electron spectroscopy 76-23, 77-33, 78-12, 81-26,-51

spectroscopy 75-9,-10,-11, 76-16,-17,-18, 78-22,-58

sputter profiling 76-34,-37, 77-30,-57, 78-19,-20,-21,-25,-61,

79-26

automated measurement 78-37

photomask inspection 78-44,-45,-46

tape bonding 76-13, 77-28,-29

automation 75-19, 78-2, -4, 79-5

avalanche breakdown 80-7

injection 80-4, 82-33, 84-9

axial channeling 76-38

B

back pressurization 80-48,-49, 81-45, 82-34

surface damage 83-6, -7, 84-5

backscattered emission 77-14

ba I I bond 83-25

band state 82-22

structure 74-6, 85-7

ta i I 83-27

tailing 81-24, 84-29

bandgap 74-6, 85-19

narrowing 81-3,-24, 82-21,-22, 83-10, 84-5, -7, -29, -30, 85-8,-25

Bargmann formulation 81-2

potential 81-3

base drive circuit 79-3

widening 76-14, 84-26

basic characteristics 70-3

battery 79-54

beam geometry 84-4

beam lead device 76-13, 77-28, 79-23,-24

bery Ilium doped 85-19

bevel angle 84-3

bias isolation unit 76-11, 77-22

bibliography 64-1, 68-1,-10

bipolar 84-5

device 74-10, 83-9,-10, 85-6

process 78-52, 79-47

birefringence 84-17

black chromium artifact 77-32

blister test 83-26

boiling heat transfer 67-2

bond 78-17,-18

test 76-1, 82-13,-14

bonding 72-9, 73-3, -7, 74-1,-11, 76-1

boron 81-22,-41,-54, 85-26

nitride 78-59

doped silicon 78-35, 79-32, 80-18, 81-33

bound exciton 82-39

state 81-24, 82-20

boundary conditions 75-12

76
c breakdown 77-23

characteristics 64-3, 66-7

voltage 83-13

bridge structure 78-7

Browian motion 80-36

bubble test 82-35

bugging height 76-13, 77-28

built-in electric field 81-24, 84-29

bulk 78-2

photovoltaic effect 79-5

resistivity 76-6

silicon 84-21

C

calibrated linewidth standards 76-15,-36

calibration 77-16, 80-46, 84-16

capacitance 77-24

measurement 76-11, 77-22

meter 76-11

microphone 71-2, 73-2

response 79-36

transient 83-37,-38

voltage 77-42, 80-58, 81-17,-54

capacitor microphones 72-2

capillary leak 79-58

carbon 83-22

cardiac pacemaker 76-33, 77-56, 79-53

carrier-carrier scattering 83-9

concentration 80-34, 81-29

depth distribution 82-49

lifetime 68-7, 69-1, 72-4,-13, 73-9, 84-5

mobility 68-4, 85-4

prof i I e 84-3

recombination 68-1

scattering 83-11

trapping 68-4, 74-13, 75-21

cavity HI field 84-16

Q factor 84-16

CCD imager 81-18

CCE 75-22

cell degradation 80-50

certification 81-53,-56, 82-42,-45

channel length 83-42, 85-35,-44

mob i I i ty 80-7

channeling 78-43, 80-41

angle 81-57

characterization 62-3, 65-1, 66-8, -9, 82-30

charge collection efficiency 68-4

charge-coupled device 84-13

injection 82-33, 85-45

production 70-6

pumping 82-33, 83-42, 84-13,-21

sharing 83-17

-sheet model 85-17,-18,-46

storage device 63-2

chemical analysis 71-7, 72-10, 77-17,8 0-9, 83-22,-23

interaction 81-23 77
chemical kinetics 80-3

measurement 77-11

milling profiling 78-16

shift 75-9

structure effects 76-16

chlorine 77-61

circuit characterization 79-34, 80-12

design 76-12

simulation 81-10,-11, 83-18, 84-14,-15

speed measurement 83-28

clamping 81-4

clean silicon surface 77-17

CMOS 83-18,-41, 84-14,-15

/SOS 79-33

coherence 79-39, 82-25,-27,-28, 84-33,-34, 85-20,-29,-30,-31

collector emitter voltage 77-38

resistivity 76-7, 77-8

compositional analysis 84-19

computer control 78-2, 84-12

interface 69-3, 70-2

plotting 75-15

program 75-15, 80-34, 81-29, 82-23, 83-32,-33

simulation 81-31

conductance measurement 77-22

conduction state 81-3

conductivity 81-5

mobility 81-32

consensus standards 80-30

contact 81-21

chain 83-34

pitting 84-31

resistance 82-31,-32, 83-34,-39,-40, 84-22,-31, 85-21,-28

resistor 78-52, 79-46,-47, 84-13

contacts to ICs 84-31

contamination 79-53, 83-25

continuum model 80-1

contour map 83-33

contrast 79-60

controlled doping profile 78-71

conversion loss 80-29

converter error 85-5

cooler 66-6

cooperative research 78-10

technology 78-9

corona charging decoration 77-34

correction factor 80-1, -2, 83-1, -2, 84-8

correlation coefficient 82-23, 83-32

corrosion 79-58, 82-12

coup I ant 78-23

coupled semiconductor equation 84-10

critical channeling angle 78-71

dimension 80-43,-44, 82-26,-27, 84-33,-34, 85-20,-29,-30,-31

cross bridge 77-13, 78-7, -8, -52, 79-46, 81-20, 82-6,-51,-52, 83-44,

85-24,-47

van der Pauw 77-13

cryogenic cooling 66-6

crystal 84-17

growth 79-52, 83-22,-23, 84-19, 85-14

orientation 66-5, 69-4

crystallography 85-16
D

current crowding 76-14,-27, 80-4, 84-26,-31

distribution 66-9

focusing 79-6, 84-9

integrator 77-31

pulse 63-1

response 79-36

voltage characteristic 85-9,-10

custom circuit 76-6, 77-7

IC 81-9

C-V 76-12, 77-23,-24, 78-31,-43, 80-41

measurement 77-25

profiling 76-38, 77-64, 78-70,-71, 80-61, 81-57, 82-49

Czochralski growth 84-19

D

damage 85-1, -2

effect 71-3, 80-40

Darlington transistor 75-18, 83-20,-21

data acquisition system 69-3, 70-2

base 83-33

dc characteristics 80-7

common emitter gain 83-10, 84-5

MOSFET profile method 78-6, 80-5

transmission 77-3

deconvolution of spectra 81-55

deep impurity 71-9

level 78-27, 80-39, 82-19,-43, 84-40

chemical impurity 78-41

measurement 78-26,-29,-30,-49, 79-28,-29,-41, 80-45,

81-23,-28, 82-30,-44, 83-31,-37,-38, 84-45

spectroscopy 80-20

study 78-42

defect 72-11, 76-4, 78-28, 80-38, 81-23, 83-23, 84-39, 85-1, -2, -14, -27

characterization 82-44, 84-45

density 78-11,-27,-30

detection 77-12

distribution 78-26

identification 81-46

level 79-27

mapping 79-28,-29

degradation 74-7, 81-6

deionization 81-24, 82-20

delay time 72-7, 73-6

delayed Johnson counter 85-33

density of states 81-24,-32, 82-21,-39, 83-27,-30

depletion capacitance 68-4

deposition of Si 02 80-57

depth distribution 80-60

profiling 75-14, 76-17,-18, 78-43, 80-2,-41, 84-18

design rule 80-24

detailed device model 85-9,-10

detection limit 76-23

method 77-35

detector 66-1, 68-5, -6, 70-4, -5, 71-8, 72-10,-11

evaluation 68-4

grade silicon 83-29

nonlinearity 84-4 79
D device 75-13

characterization 78-3

fabrication 70-1, 79-16,-37,-38

inspection 76-9,-10,-20, 77-39

measurement 78-53,-54,-55, 79-48,-49, 80-51

modeling 82-47,-48, 83-14,-15, 85-8

package 80-48,-49

parameter 81-12

physics 84-5, 85-9,-10

process i ng 80-21

reliability 67-3

simulation 83-14,-15, 85-35

structure 76-22

testing 69-2

die attachment 73-5

dielectric breakdown 77-21

defect detection 77-34

dielectrics 77-23

differential reflection 75-5

diffraction 80-28, 85-16

pattern analysis 76-19, 80-28

diffused layer 78-8

diffusion 78-34,-59, 79-18, 80-20,-36, 82-2, 85-26

coefficient 84-22

length 68-1, 72-6

model 83-3

problem 75-12

digital bipolar circuit 75-16

integrated circuit 81-30

scanner 69-3, 70-2

digitization error 85-5

dimensional inspection 78-44,-45,-46

metrology 79-9, 80-8

specifications 81-48, 82-37

DIN standards 80-52

diode 62-4, 64-3, 67-3, 75-13, 85-25

die attachment 73-5

recovery 68-1, -7, 81-4

direct current 77-5

discharge suppression 77-21

discrete device 72-8, -9, 74-7

dislocation 78-12, 85-14

dispersion 84-17

distortion 81-5

DLTS 79-27, 80-39, 81-28, 82-19,-43,-44, 84-45

donor 81-3, 83-30

impurity 82-22

dopant 80-20,-39

analysis 79-30

concentration 74-4, -5

density 76-3, 77-5,-40,-41,-42, 78-6,-35,-65,-66,-67,

79-

32, 80-55,-56, 81-34,-54, 83-17, 84-6, 85-39

depth distribution 80-14

effect 85-9,-10

profile 74-4, -5, 75-15, 76-34, 77-64, 78-6, 79-12,-14,-27,-37,-38,

80-

5, -7, -58, 81-41,-57, 82-19, 83-17, 84-18

dose control 77-31

measurement 77-31

rate effect 81-30

doubled hermetic enclosure 77-51 80
E drain source resistance 81-7

voltage 80-5

drift velocity 85-39

dry oxidation 78-39

dual angle of incidence 85-12

dye laser 80-37

E

e-beam energy deposition 75-6, 76-20, 77-19

evaporator 78-15

induced current 76-9,-10, 77-14,-39, 78-51, 81-44, 84-38

lithography 78-13, 79-15,-17, 83-44

meta I I i zati on 79-16

edge detection 78-48, 82-25,-28

location 77-32

education 79-13

effective mass 79-32, 81-32

efficiency 83-43

electrical alignment resistor 78-52, 79-46,-47

characteristic 75-20

contact 62-1

junction 83-4

mask alignment 77-49

measurement 75-1, 77-11, 78-32,-67, 79-19, 80-31,-55,-56

parameter 83-43

property 80-34, 81-29, 82-3,-43

resistance 67-2

test structure 79-10, 80-13

transmission 79-51

transport 85-39

electrochemistry 83-16

electromigration 84-39, 85-36,-37

electron 72-3

beam 75-6,-10, 76-20, 85-47

density 83-4

device 71-4, 78-36, 79-16, 80-21, 81-7,-17, 82-4,-13,-14

escape depth 78-21

hole pair 66-4

irradiation effect 81-30

microscope 77-58

mobility 77-40,-41, 83-11

radiation 71-3

spectroscopy 77-17

tube 74-1, 78-36

-gun evaporator 76-24

electronic bond 81-25

circuit 79-3

device 79-23,-24

package 78-23, 81-45, 82-34,-36

reliability 77-54

state density 79-25

stopping 85-1, -2

structure 79-1

electronics 73-6, 74-3, 75-17,-19, 77-9,-10,-11,-21,-38,-54,

78-9, 79-9,-18,-31, 80-8,

81-13,-14,-26,-39

electrophoretic decoration 77-34 81
F electrostatic potential 83-4

e I I i psometr i c accuracy 82-7

angle 82-7

ellipsometry 80-17,-19, 81-17, 83-19, 84-25, 85-12

elliptic equation 80-59

solver 82-46

elongation 74-9

ELS 79-1

EMI 85-23

emitter-only switching 75-28

end contact resistance 83-34, 84-31

energy conservation 80-45

conversion 80-53

gap 78-42

engineering career 84-41

environmental testing 70-1

epitaxial diffusion 74-10

growth 78-33, 80-33

layer 76-6

resistivity 77-8

si I icon 79-11

epitaxy 75-5, 79-52, 83-36, 84-36

EPR 79-11

equilibrium carrier concentration 84-7

equipment 82-16

error function 75-15

source 72-7

ESR spectroscopy 84-16

estimator 83-43

etching 81-44

EXAFS 85-38

excess carrier lifetime 68-1

exhaust 84-20

exposure 76-26, 77-44, 80-42, 81-42

control 76-26, 77-44

modeling 80-42, 81-42

F

fabrication 73-3

technology 70-4, 71-6

failure 73-5, 76-33, 85-11

and moisture 78-62

mechanism 67-3, 79-50,-55

mode 67-3, 76-33, 79-50

fano factor 70-6

fault 78-51

detection 77-63, 81-31

Federal government 81-43

Fermi energy 82-21,-22

Fick’s law 80-36

field effect device 83-9, 85-6

figure of merit 83-43

filar eyepiece 80-27, 82-17

micrometer 82-17

film 83-26

thickness 76-26, 77-44

f i I ter 84-20

82
o

finite difference technique 75-12

element 80-58, 81-37, 82-20,-46,-48, 84-3,-46,-47, 85-41,-42,-43,-44

f I ash I amp-pumped laser 80-37

flatband voltage 85-17,-18,-46

flip chip 71-2, 73-2

flying spot scanner 78-44,-45,-46

focal plane detector 66-3

foreign competition 78-9,-10

four probe 64-2, -4, -5, -6, 67-1, 68-11, 74-3, 77-8, 83-12, 84-2, -8, 85-3

Fourier analysis 80-28, 84-1

spectrum 80-28

transform 85-5

Franck-Condon shift 85-27

fringe location 77-32

front contact resistance 83-34

FT-IR 81-1, 83-6, -7, 84-4, 85-5

furnace anneal 82-19

qua I i f i cation 76-25

fused silica 77-43

G

gain 85-9,-10

gallium arsenide 72-13, 78-12, 81-21, 83-36, 84-19,-36,-40,

85-6, -7, -14, -16, -19

diffusion 74-10

doped silicon 80-18

electrode 62-1

gamma ray 71-6

detector 70-6, 74-13, 75-21

gas analysis 74-12

infusion of leaks 77-51

gate length 84-22

oxide film 76-24

gated diode 79-10,-34, 80-13, 81-18,-38

electrometer 79-10, 80-11,-13, 81-18,-20

Gaussian diffusion 75-15, 77-42

Ge(Li) detector 74-13, 75-21

general purpose PDE software 81-8

generation current 83-31

lifetime 79-10, 80-11, 81-38

germanium 64-1, 67-2, 68-3, -7, -11, 69-1, -5, 70-4, -5, -6, -7, 71-6, -7, -8, -9,

72-10, 74-13, 75-21, 81-37

glass passivation film 77-35

gold 74-8

acceptor 78-27,-28

donor 78-27

doped silicon 72-13, 73-9, 76-5

government facility 81-43

laboratory 84-41

gradient voltage 84-30, 85-25

graphite contact 62-2

gray level 79-60

G-V 78-31

S3
H H

Hall coefficient 81-33

effect 70-2, 78-32,-33, 79-11, 80-31,-33,-34,-54, 81-29,-54

factor 81-33

mobility 81-32,-33

halogen 82-12

hardness assurance 76-21, 77-20

heavily doped semiconductor 81-37

si I icon 84-6, -7

heavy doping 83-9,-10,-11, 84-29,-30, 85-8,-25

helium leak detector 82-35

test 74-12

hermetic test 81-45, 82-34,-36

hermeticity 74-11,-12, 76-33, 77-50,-51,-52, 79-23,-24,-53,-58, 80-25,-48,-49,

82-9,-11,-15,-35, 83-45, 84-32

test standards 77-50,-52

heterostructure 85-6

high current switch 78-56

detection sensitivity 77-63

frequency probe 73-6, 75-8,-17

reliability 73-4

resolution stage 77-66

speed power switching 83-20,-21

voltage 81-4

bias supply 77-37

measurement 76-11, 77-37

sweep 77-37

switch 78-56

hole density 81-32, 83-4

effective mass 81-34

mobility 78-35, 79-32, 81-34, 83-9,-11

homogeneity 78-4, 79-5

hot carrier 66-5, 69-4

bias stress 85-45

/cold wafer chuck 79-28,-29

photo I urn i nescence 85-19

spot 71-5, 72-5, 74-1, 75-2,-18,-20, 76-2,-14,-27,-28,-29,-30,

77-2, -4, -48, 84-26

Huang-Rhys factor 85-27

hybrid 79-23,-24

circuit 74-7, 82-35

device 77-56

microcircuit 80-48,-49

package 80-25, 84-32

hydrogen 79-35

chloride 77-61

hydroxyl 79-35

I

IC 83-24

fabrication 80-21

inspection 81-58, 82-50

linewidth measurement 76-36, 77-46, 78-47

passivation overcoat 77-12

photomask 76-36, 77-45, 78-48, 82-10

processing 78-59, 81-44, 84-38

quality control 77-34

84
I

IC test structure 82-51, 83-40, 85-28

transistor 75-8

image resolution 77-62

imaging contrast 80-47

IMMA 79-30

impact noise 78-23

impedance 79-60, 81-5

transformer 79-60

implant 82-2

profiling 78-70, 80-61

implantation angle 77-64

measurement 78-24

implanted impurity 80-40

impurity 72-11,-12, 77-15, 80-9,-20, 81-3, 83-23,-27,-30

analysis 79-30

band 83-27

characterization 71-8

defect 72-10

distribution 79-18

level 81-37, 82-20

mode 85-15

pa i r 82-20

profile 76-22, 83-17

indium doped silicon 78-33, 80-33, 82-39

phosphide 78-12

i nduct i ve I oad 79-3

infrared 71-9, 81-1, 83-5, 84-17

absorption 70-7, 83-23, 84-5

reflectance 80-16

response 74-13, 75-21

spectrophotometry 84-4

inhomogeneity 64-6, 68-10

instrument 68-11

instrumentation 77-24, 78-31, 80-37

insulator film 76-22, 77-12

integrated circuit 69-2, 70-1, 72-8, 73-1, -4, -7, -8, 74-2, -7, -11, -12,

75-6, -7, -19, 76-8,-15,-32,

77-

6

, -9 , -15 , -18 , -27 , -49 , -52 , -65

,

78-

5,-10,-13,-37,-52,

79-

8, -9, -15, -31,

80-

6, -9, -10, -12, -27, -62,

81-

9,-10,-11,-13,-14,-17,-35,-36,-47,

82-

5,-17,-31 , -32,-40,-51

,

83-

28,-39, 84-2,-28,-37,

85-21 , -22 , -23 , -24 , -33 , -34 , -36 , -37

injection logic 75-16

test structure 80-13, 81-18

interactive graphics 82-46, 84-46

interband scattering 85-40

interconnection 81-39, 82-32,-39, 85-21,-22,-37

interface 76-12

characteristic 76-22

damage 85-45

state 79-42, 82-33, 85-45

trap 84-21,-23

trapped charge 82-47, 83-42

interfacial boundary 75-12

contact resistance 83-35

i nterf erogram 81-1

interferometer system 77-32 35
i nter I aboratory comparison 75-17, 77-60, 78-17,-18,-64

i ntermeta I I i c formation 82-13,-14

international standards 80-52

standardization 83-8

intrachip variation 83-18, 84-14,-15

intrawafer variation 83-18, 84-14,-15

inverter 83-18, 84-14,-15

chain 85-33

ion beam current 78-24

etching 76-37

lithography 80-21

scanning 77-31, 78-71

channeling 78-71, 79-37,-38, 80-14, 81-41,-44,-57, 84-38

dose measurement 81-57

f I uence 80-60

implantation 76-38, 77-5,-31,-64, 78-13,-24,-30,-41,-42,-43,-71,

79-

15,-27,-37,-38,

80-

14,-39,-40,-41,

81-

22,-41,-57, 82-19,-49, 84-11,-18,-38, 85-1, -2, -26

knock-on 78-21

microprobe mass spectrometry 77-15

sputtering 76-17,-18, 77-33, 79-56,-57

ionized impurity scattering 77-41

ionizing 83-13

radiation 75-6, 76-20, 77-19,-20, 79-4,-16, 80-23, 82-4, 84-23

tota I dose 83-28

IR absorption 72-10,-11

IR spectrum 85-15

IR temperature measurement 82-3

irradiance measurement 76-26, 77-44

irradiation 68-5, -6, 84-21

isoelectronic 82-39

isotope 79-36

shift 78-42, 80-20

I-V characteristic 84-23, 85-17,-18,-46

J

junction capacitance 84-30

structure 82-2

temperature 77-2, 79-45, 82-29, 84-35, 85-32

termination 83-13

K

Kelvin measurement 83-34, 85-28

kinetic equation 80-3

Kirkendall void 74-8

L

laboratory accreditation 80-53

surface 84-20
Laplace equation 83-1, -2

large scale integration 79-31

laser 66-6

ablation 82-24

annealing 80-40, 81-22

application 79-39

illumination 78-47

interferometer 77-58

scanning 75-20, 76-28,-29,-30,-31, 77-53,-54,-55, 78-54,-55,

79-48,-49, 80-50,-51, 81-27,-31,-46, 84-27

lateral inhomogeneity 78-11

prof i le 84-38

lattice damage 78-72

mobility 77-40

relaxation 85-27

scattering 77-41

layer thickness 82-1

leak detection 77-50,-51

rate 78-62

to reliability 78-62

testing 76-33, 77-56, 79-53, 80-48,-49, 81-45,82-34,-35,-36

leakage current 78-27, 79-10, 80-11,-13, 81-38

least squares 84-7

lifetime 66-1, 75-13, 78-40, 81-28, 82-44, 83-10,-29,-31, 84-6,-45, 85-8

lightning arrester 79-51

line edge detection 76-35

location 77-45,-46

image profile 77-45

spacing 82-10,-18

linear calibration curve 82-10

linewidth 77-6, 78-7, 80-6,-28,-43,-44, 82-5, -6, -10, -17, -26, 83-44, 84-48,

85-24

calibration standards 77-60, 78-64, 82-18

measurement 76-15,-19,-35, 77-32,-45,-48,-58,-59,-60, 78-63,-64,

79-40, 80-27,-28,

82-17,-18, -25 , -27 , -28 , 84-33 , -34

,

85-20,-29,-30,-31 , -51 , -52

microscopy 77-59, 78-63

system 78-48

liquid nitrogen 67-2

lithium 66-1, 69-5, 70-4, -5, -6, 71-6, -7, -8, 72-11,-12

drift mobility 68-4

drifted detector 69-5

lithography 82-51, 85-24

local mode 85-15

s I ope 80-2 , 83-1 , -2

logic flow observation 76-31

identification 77-55

simulation 81-10,-11

long channel MOSFET 84-11

low energy electron probe 78-11

temperature processing 78-28

LSI testing 76-28,-31, 77-55

M

magnesium fluoride 84-17

magnetic package lead 81-5 37
magnetic pickup 71-2, 73-2

mask alignment tolerance 80-24 mass spectrometer measurement 82-9

material 83-45

transport 79-18

materials characterization 68-4, 78-28, 79-19, 80-8, -9, 81-14

parameter 81-12,-40

property 81-16

signature 80-47

mean energy 66-4

measurement 66-4, 68-2, 72-1, 77-16, 79-1, 80-46, 84-22,-43,-44, 85-35

assurance 82-10

development 77-53

error 72-7,77-66

i nterf erence 79-42

mixer 77-54

prot) I em 68-2

technology 70-1, 71-5, 72-5, 75-19, 76-2, -4, -5, -9, -32,

77-

10,-18,-48,-56,

78-

2, -4, -10, 79-45,-53, 80-8,-29,-30,

81-46, 82-39, 83-24, 84-27

uncerta i nty 80-29

mechanical scanning 79-44

mechanism 77-29

memory 79-31

metal evaporation 76-24, 78-15

-nitrogen-oxide 77-33

-semiconductor contact 83-40

metallization 73-4, 76-24, 77-25, 78-15,-34,-53,-54,-55,

79-48,-49, 80-51, 84-39, 85-21,-36,-37

metallurgical junction 83-4

metallurgy of wire 74-9

metrology 78-40, 80-43,-44, 81-13,-14,-15, 82-26

microcircuit 70-1

device 78-23

processing 68-2

microdensitometry 78-44,-45,-46, 79-39

microdot reference specimen 79-30

microelectronic device 76-20,-24, 77-14, 78-15, 82-51

interconnection 71-2, 73-2

material 69-2

package 82-35

test structure 83-34

microelectronics 72-8, -9, 73-3, -7, -8, 75-7,-22, 76-3, -6, -9, -10, -13, -32,

77-7 , -10, -27 , -28 , -39 , -43 , 78-17 ,-18,-40,-65,

79-9,-13,-16, 80-8,-25,-27,

81-

13 , -35 , -36 , -38 , -39 , -40 , -43

,

82-

5, -6, -11 , -15,-31 , -32,-40,-52, 83-25 , -39,

84-37,-39,-48, 85-21 , -22,-23,-34 , -37

microfatigue test 82-13,-14

microl ithography 79-39,-40, 82-25,-27,-28, 84-33,-34, 85-29

micrometrology 75-7, 76-19, 79-39,-40, 80-27,-43,-44, 81-14, 82-17,-18,-26,

85-20,-30,-31

microprocessor 79-31

microscope 77-47, 79-43

microscopy 77-45,-46, 77-62, 78-68, 79-69, 80-43,-44,-47, 82-25,-26,-27,-28,

84-33,-34, 85-20,-29,-30,-31

microwave 70-3

frequency 76-39

mixer diode 76-21, 80-29

S3
N minicomputer 84-10

minimum sample 83-43

minority carrier 84-6

current 84-7

lifetime 83-31

mobility 83-10

MIS capacitor 77-21

structure 77-23,-25, 78-31

MNOS structure 76-17,-18

mobile ion 77-61, 78-39, 79-4,-42

mobility 69-5, 70-5, 71-7, -8, 78-67, 80-34,-55,-56, 81-29, 84-5,

85-8,-17,-18,-39,-46

MO-CVD 83-36, 84-36

model calculation 81-27

modeling 80-35,-59, 85-35,-44

modified MIS measurement 76-11

modular test program 80-24

modulation 80-29

moisture 81-50, 82-9, 83-45, 84-32

content 81-50, 82-9

generator 81-50

infusion 78-62, 79-58

measurement 80-26

sensor 84-32

stress test 78-62

molecular beam epitaxy 85-19

structure 83-16

momentum conservation 85-40

Monte Carlo method 83-3, 85-1, -2, -6, -40

MOS 77-43, 81-51, 84-23

capacitor 75-3, 76-4, -5, 78-28,-51, 79-4,-42

device 78-39, 79-4,-17, 81-26

structure 76-17,-18, 78-38

MOSFET 77-5, 80-5, -7, 81-7, 82-4,-33,-47,-48,

83-13,-41, 84-11,-22,-23, 85-17,-18,-35,-44,-46

dc profiler 79-10, 81-18,-20, 83-17

mode I 85-41 , -42 , -43

structure 78-22, 79-25

transistor 82-46, 84-11,-46,-47, 85-41,-42,-43

multi grid method 82-20

multilayer analysis 80-2, 83-1, -2 • multilevel iteration 80-59

multiple reflection 75-5, 83-6, -7, 84-5

scattering 83-27

N

NAND gate 83-18, 84-14,-15

neutral trap 82-33"

neutron 72-3, 76-21

activation analysis 80-54

radiation effect 81-7

transmutation doping 80-38

nomograph 70-4

nondestructive bond pull 74-9

measurement 79-6, 82-3, 84-27

testing 71-5, 72-1, -5, 75-20, 76-13,-28,-29,-30,-31,

77-4,-28,-48,-50,-55, 78-3, 79-5,-23,-24, 89
0

nondestructive testing 80-4,-50,

81-25, 82-13,-14, 83-20,-21, 84-9, 85-11

nonlinear equation 82-48

region mapping 77-55

resistor 79-51

nonlinearity measurement 75-20, 76-30

nonuniform structure 83-12

NTD 84-28

si I icon 84-24

n-type si I icon 77-40,-41

nuclear detector 66-1, 69-5, 71-7

radiation 68-5, -6, 70-6

track technique 78-66

numerical analysis 77-13

method 81-8, 83-14,-15, 84-10

simulation 80-58

0

ohmic contact 78-53

oi I fumes 84-20

on-chip signal processing 80-11

optical absorption 74-6, 83-22,-23, 84-19, 85-7

data 84-7

coherent illumination 76-35

filtration 76-35

imaging 80-43,-44, 82-26

linewidth measurement 76-15

material 84-17

metrology 82-5,-25,-27,-28, 84-33, 85-29

microscopy 77-32,-58,-59,-60, 78-63,-64, 79-39,-40, 82-5,-17,-18

overlay 78-44,-45,-46

property 81-23, 82-39,85-19

reflectance 78-72,-73, 80-16

scanning 78-53, 80-50

microscope 78-47

spectra 80-20, 81-22

optics 77-54

oriented crystal silicon 77-17

oscillator 70-3

outlier 82-23, 83-32,-33

output signal 76-23

oxidation 78-34, 79-52

ambient control 78-39

atmosphere 78-38

furnace 77-43

kinetics 79-26

^ of si I icon 78-59

oxide film of GaAs 79-21

growth 78-39

humistor characteristics 80-26

kinetics 79-25

I ayer 80-21

moisture sensor 79-58

/semiconductor interface 79-21

thickness 78-25

trapped charge 82-47

uniformity 78-11

90
p

oxygen 70-5, 84-5

adsorption 77-30

content 84-4

in germanium 70-7

i n si I icon 70-7

P

package internal moisture 80-26

packaging 83-45

parameter control 77-7

extraction 85-17,-18,-46

measurement 84-37, 85-22,-34

parametric tester 81-9,-12

parasitic element 75-8

path 83-9

partial differential equation 82-48, 85-40,-41,-42,-43,-45

partially coherent imaging 79-39

passivation 77-35,-61, 84-39

Penrose tiling 85-38

performance criteria 78-57, 80-15

phase imaging 77-1

phonon 85-19

phosphorus concentration 80-54

contact doping 83-35

prof i I e 78-25,-58

photochemistry 80-3

photoconduct i ve decay 68-1, -7, 72-4

photoconductivity 66-11, 71-9, 79-5

variation 80-32

photodetector 66-6

photodiode 84-29

photoemission spectroscopy 77-57

photolithography 74-11, 75-7, 76-19, 77-49, 78-34, 79-52

photol umi nescence 66-11, 82-39, 84-7

photolysis kinetics 80-42, 81-42

photomask 75-7, 78-44,-45,-46, 80-10,-27,-28, 82-5,-17,-18

alignment 80-6

inspection 75-4

linewidth 77-46

standard 77-58,-59, 78-63

performance 80-24

photometric technique 80-54

photon intensity 80-3

photoresist 77-44, 80-3,-42, 81-42

sensitivity 76-26

photoresistance DLTS 84-40

photoresponse 71-9

photovoltage 72-6, 78-2

photovoltaic cell 81-27

effect 72-6, 78-4

energy 79-54, 80-30

method 72-1, 77-3, 78-49, 80-32

module 80-46, 81-53, 82-42

power 80-15

wafer scanner 78-29

photovoltaics 77-53, 78-57, 79-50,-55, 80-15,-30,-46,-53,

81-31,-46,-49,-52,-53, 82-16,-38,-41,-42 91
p physical specifications 81-48, 82-37

standards 81-16

FIND 78-23

planar bipolar transistor 78-25

channeling 76-38

enhanced deposition 84-36

technique 83-36

etching 78-13, 79-15

production, heating 82-24

silicon technology 76-23

test structure 76-7

platinum 83-37,-38

doped si I icon 82-43

PMOS shift register 76-31

p-n junction 73-1, 75-3, 76-4, -5, -9, -10, 77-39,-42

isolation 78-33, 80-33

polished silicon surface 78-72

polymer 83-26

/substrate/sol vent 84-25

polysilicon film 80-14,-19

polystyrene/silica adsorption 84-25

porous graphite contact 63-1

potent i a I prof i I i ng 81-21

power 75-1, 83-13

conditioning 78-57, 79-54

control 78-57

eye I i ng 74-8

device grade silicon 77-3, 78-49, 79-41, 80-45, 81-28, 82-44, 84-45

material 80-38

dissipation 64-3

MOSFET 82-3, 85-11

semiconductor 78-2, -4, -26, 79-5, 81-4, 84-28

switching 78-3

system 79-54

thyristor 78-26,-29

transistor 66-7, 71-5, 72-5, 74-1, 75-2, 76-2,-14,-27, 77-4,-48,

79-6,-45, 80-4, 81-6, -7, 82-3, -4,

83-20,-21, 84-9,-26

predeposition 78-41

principal angle of incidence 82-7, -8, 84-12

probe card 78-37

current density 82-1, 84-8, 85-3

pad 78-37, 79-7

radius 84-2, 85-3

separation 84-2, 85-3

spacing 82-2, 84-8

station 81-19

probing 78-37

process characterization 81-40

control 74-11, 75-3,-19,-22, 76-32, 77-10,-56, 78-8, 79-2, -8, -33, -53,

80-6,-12,-24, 81-10,-11,-19,-36, 82-6,-40, 84-48

metrology 79-33

modeling 80-36, 82-21, 84-47

parameter 81-40, 84-43,-44

sensitivity 84-47

uniformity 76-6, 77-7

validation wafer 76-6, 78-5, 79-34, 81-35,-36, 82-23,-40, 83-32,-33

processing 79-20

technology 79-52

product certification 80-53

92
Q

profile analysis 83-4, 84-2

profiling technique 77-11, 80-5, 83-17

propagation delay 83-28, 85-33

proton 72-3

irradiation 68-5, -6

proximity correction 83-44, 85-47

effect 83-44, 85-47

p-type silicon 78-35, 79-32, 80-18, 81-33,-34

puli rate 76-1

strength 76-1

test 78-17,-18

pulsed laser 80-37

pump 84-20

purple plague 74-8

R

quadrant detector 84-12

quadraxial configuration 80-37

quality assurance 78-72, 81-49,-50, 82-9,-16,-38, 84-32, 85-14

quantum efficiency 84-29

quasi crystal 85-38

R

radiation 66-2, 70-4, -5, 83-13

absorbed dose 80-21

damage 68-5, -6, 72-12, 75-16, 78-13,-14, 79-15,-16,-17, 80-21,-38

detector 69-5, 71-6, -7, -8

dose 76-24, 77-19,-20, 78-15, 79-16

effect 72-3, 75-16, 76-8, 79-4, 81-7, 82-4,-47, 83-28, 84-21,-23,-46

hardness 76-8,-21, 78-13, 79-15, 81-30, 82-4

testing 77-19,-20

upset 81-30

radiative decay lifetime 66-11

radioisotope leak detection 77-52

test 74-12

Raman scattering 83-16

spectrum 85-15

random equivalent direction 79-37,-38

fault 76-6, 77-7, 80-6, 81-35,-39,-40

rapidly cooled material 85-38

rate constant 80-3

RC network 72-7

recombination 72-6, 75-13, 83-31, 84-6

rectifier 78-56

redistribution problem 75-12

reference cel I 80-46, 81-52, 82-41

material 81-15

reflectance function 78-1

reflected illumination 78-47

reflection 77-1

acoustic microscopy 78-1, 79-59

refractive index 82-7, 83-19, 84-12,-17, 85-12

registration error 75-4

reliability 68-9, 72-8, -9, 73-7, 74-7,-11, 76-2, -6, -27, -32, -33, 93
s reliability 77-7,-34,-53,-56, 78-5,-54,-55,

79-2, -8, -49, -50, -53, -55, 81-9,-50, 82-9,

83-20,-21 , -25,-45,84-32,-39, 85-36,-37

research 84-42

resistivity 62-1, 64-1, -2, -4, -5, -6, 67-1, 68-8, -9, -10, -11,

69-1, 72-13, 73-9, 74-3, -4, -5, 76-3, -7,

77-

8,-16,-40,-41,

78-

2

, -4 , -11 , -35 , -65 , -66 , -67

,

79-

12 -14 -19 -32

80-

1, -2, -9, -10, -18, -34, -54, -55, -56, 81-29,-32,-34,-54,

83-^1, -2, 84-2, 85-3,-13,-39

gradient 72-1, 80-32

i n homogeneity 69-1

nonuniformity 78-29

profiling 79-12,-14,83-29

variation 77-3, 78-49, 79-5,-41, 80-32,-45

resolution of forces 76-1

resonance fluorescence 76-25

i on i zat i on spectroscopy 82-24

return loss 80-29

reverse base current 80-4, 81-6

bias 78-3, 79-3, -6, 81-4, -6, 83-20,-21, 84-9

review 67-4, 68-8

ribbon wire 73-3

ring oscillator 83-18, 84-14,-15, 85-33

rotating analyzer 82-8

round robin 67-1

Rutherford backscatter i ng 78-71

S

safe operating area 71-5, 72-5, 75-1, 76-2,-14,-27, 77-2, -4, -48, 78-3,

79-3, 84-26, 85-11

sampling strategy 84-43,-44

Sand i a bridge 73-6

sapphire 75-5

surface 78-73

saturation effect 80-3

voltage 77-38

sea I i ng 83-41

scanning acoustic microscopy 77-63, 77-65, 78-1, 79-60, 81-58, 82-50

electron microscopy, see SEM

light spot 80-35

microscopy 82-27, 84-33,-34, 85-20,-29,-30,-31

photometric microscopy 77-66

scattering 73-6, 85-1, -2

chamber 66-2

mechanism 77-40, 78-35, 79-32, 81-33,-34

parameter 75-17

spectrometer 66-3

theory 83-27

Schottky barrier 76-38

diode 76-21, 80-29,-58, 82-49

Schwinger formulation 81-2

screen 73-5

screened Coulomb potential 81-2

seal 74-12

second Born approximation 83-30

94
s

second breakdown 62-3, -4, 65*1, 66-7, -8, -9, -10, 67-3, -4, 68-8, 69-1,

71-5, 72-5, 76-2,-14,-27, 77-2, -4, -48, 78-3,

79-3, -6, 80-4,-10,

81-

4, -6, 83-20,-21, 84-26

secondary ion mass spectrometry, see SIMS

emission 77-14

particle 77-31, 78-24

segregation 79-18

selective chemical etching 77-34

self-energy 85-7

SEM 73-4, 75-6, 76-9,-10,-20, 77-14,-19,-20,-32,-39,-62,-65

78-51, 80-27,-47, 81-44, 84-38

SEMI 81-48, 82-37

SEMI standards 80-52

semiconducting material 77-9

semiconductor 63-2, 64-2, -3, -4, -5, -6, 68-1, -9, -10, 69-5, 70-3, -4, -5,

71-4, -6, -9, 72-10,-12,

74-3, -6, 75-15, 76-4,-12,-23,-32,

77-16,-39,-42, 78-4,-11 , -31 , -32, -36,-67,

79-

9,-12,-14,-27,-46,-51,-55,

80-

8

, -9 , -31 , -36 , -39 , -54 , -55 , -56 , -59

,

81-

5,-13,-14,-15,-16,-26,-47,-54,

82-

4,-19,-30,-43, 83-8,-22,-23,-27,-45, 84-1,-19,-27,

85-15,-16,-36

breakdown 66-5, 69-4

characterization 76-7, 77-8, 82-38, 83-37,-38

defect 76-5

device 62-3, 63-2, 66-6, -7, -8, 67-4, 68-8, 73-8, 74-11,-12,

75-

1, -3, -5, -19, -20,

76-

7

, -9 , -10 , -22 , -28 , -30 , -33

,

77-

2 ,-10,-19, -20 , -21 , -22 , -23 , -34 , -37 , -38 , -54

,

78-

14,-38,-56,-60, 79-4, -9, -17, -20, -37, -38,

80-50, 81-30,-47,-50,-51,-58,

82-9,-35,-50, 83-40, 84-23,-32

model 85-41,-42,-43

diode 76-21, 80-29

electronics 78-65

equation 83-4, 84-3

fabrication 75-4

hermeticity 77-50,-51

material 77-10, 82-30

metrology 77-18, 78-26,-29,-53,-54,-55, 79-48,-49,

80-10,-51, 83-24

processing 77-9, 78-59, 81-47

standards 80-52

structure 77-33

surface 77-57

technology 78-9, 79-18, 81-47

test method 80-52

wafer 72-1

semi -insulating 84-40

sensitivity index 76-26, 77-44

sensitometry 77-44, 80-42, 81-42

shear test 83-25

sheet resistance 64-1, 77-6,-13, 78-7, -8, -52, -53, -54, -55,

79-47,-48, 80-2,-51, 81-27,

82-

1, -2, 84-2, -8, -27, 85-3

resistor 75-3, 76-3, 78-7,-65, 79-34, 84-13

short channel 80-7, 82-47, 82-48, 83-17,-41

MOSFET 83-3,-42 95
s

Si and Si 02 layer 75-14

chemical states 7^-22

signal processing 77-65

Si (Li) detector 72-3

silicon 62-1, -2, 63-1, 64-1, -2, -4, 66-1, -3, -4, 67-1, -2,

68-3, -5, -6, -7, -11, 69-1,

70-1, -7, 71-3, -9, 72-4, -6, -11, -12, -13,

73-1, -9, 74-3, -4, -5, -6, -13, 75-13,-15,-19,-21,

76-

3, -4, -5, -7, -12,

77-

3, -5, -6, -8, -11, -16, -23, -24, -25, -42, -49,

78-

5

, -32 , -34 , -41 , -43 , -49 , -59 , -66 , -67

,

79-

12,-14,-19,-27,-30,-31,-35,-36,-41,-42

80-

9

, -20 , -31 , -33 , -36 , -38 , -39 , -40 , -41 ,-45,-54, -55 ,-56,-60,

81-

1,-13,-14,-15,-22,-23,-24,-29,-32,-37,-41,-47,-48,-54,

82-

19 , -20 , -21 , -22 , -24 , -37 , -39 , -43

,

83-

8

, -9 , -10, -11 , -22 , -30,-31 , -37 , -38

,

84-

4, -5, -19, -29, -30, 85-13,-15,-25,-26,-27,-39

carbide 62-1

characterization 81-49

defect 66-10

device 78-56

diode 66-5, 69-4, 76-34, 83-19

dioxide 77-43,-61, 78-38,-39, 79-4,-35,-59, 81-26,-41, 83-26

film 75-10, 76-16,-24, 80-17,-19,-23

film 75-5

gate 79-33

implantation 80-14

lattice 78-42

monoxide 76-34

nitride film 80-17,-19

oxidation tube 78-38

polishing 77-16

radiation detector 66-2

resistivity 75-3

spectra 76-34

sputtering 79-30

technology 81-44, 84-28,-38

simulation 85-41,-42,-43,-44

SIMS 78-70, 79-30, 80-14,-61, 81-51, 82-49, 83-3, 84-18

Si 02 growth kinetics 78-19,-20

i nterface 78-61

layer 75-11

thermal oxide 79-26

/Si interface 75-9, 76-16, 77-26,-30, 78-16,-19,-20,-21,-22,-58,

79-1,-22,-25,-26, 80-22,-57

film 76-37

sodium contamination 77-43

impurity 78-38

trace detection 76-25

solar array 77-53, 80-15

cell 77-53, 78-53,-54,-55, 79-48,-49,-50,-54,-55,

80-

15,-30,-35,-46,-51,

81-

27,-31,-46,-49,-52,-53, 82-16,-38,-41,-42, 84-27

analysis 81-31

defect 80-35, 81-27

measurement 80-51

silicon 81-48, 82-37

stability 79-48,-49

col lector 80-53, 81-56, 82-45

data 82-16

96
s

solar energy 78-57, 80-15,-53, 81-52,-53,-56, 82-41,-42,-45

simulator 81-49, 82-38

solid state device 84-11

electronics 70-3, 83-40, 84-22,-37, 85-28,-34

SOS 76-12, 77-25, 78-14,-15,-73, 80-16, 81-35, 82-40

measurement 77-22,-37, 79-20

S-parameter 73-6, 75-8,-17

space charge region 84-30, 85-25

spatial integrity 77-27

nonuniformity 83-42

specific contact resistivity 84-31

specifications 65-1, 66-7

spectral analysis 81-55

response 81-49, 82-16,-38

spectrometer 66-3

spectroscopic 81-1

elllpsometer 82-8, 84-12

technique 83-5

specular reflection 75-5

spider bonding 71-2, 73-2

spreading resistance 74-4, -5, 77-16, 78-49, 79-12,-14,-19,-41,

80-

1, -2, -18, -45,

81-

21, 82-1, -2,

83-1, -2, -3, 84-2, -3, -8, -18

sputter etching 79-60

profiling 81-26

sputtered glass 76-39

sputtering 81-51

theory 79-57

yield 79-56,-57

square array 77-8

SRM 80-17,-19, 81-15, 82-10, 84-16, 85-13

standard reference material, see SRM

standards 69-2, 79-54, 80-15, 81-48,-49,-52,-53,-56,

82-

16 , -37 , -38 , -41 , -42 , -45

,

83-

8,-25

statistical analysis 82-23, 83-32,-33

model 79-56

technique 83-43

steady state heat flow 84-1

step coverage 81-39

storage 78-57

strain 85-14

striation 83-22

structural defect 77-35

sty I us method 78-50

submicron 85-44

bipolar device 85-9,-10

length measurement 77-66

lithography 85-47

sulfur 78-30,-41, 79-36, 81-23

surface 83-16

analytical analysis 75-14, 76-23, 77-26,-57

barrier detector 71-3

contamination 76-22

damage 78-72,-73

effect 75-6

impurity 77-17

phenomena 63-2

photovoltage 72-13 97
T surface potential 78-12

preparation 74-4, -5

recombination 79-10, 80-11, 81-38

roughness 80-16

site 84-25

state 63-1, 72-6, 84-21

temperature 71-1

switching 81-6

characterization 80-4

synchrotron radiation 77-57

system control module 69-3, 70-2

T

TAB device 79-23,-24, 81-25, ,82-13,-14

tape bonded device, see TAB device

technology assessment 78-56, 80-12

teletypewriter interface 69-3, 70-2

temperature 74-1, 75-1, -2, 77-40,-41, 81-6

coefficient 68-3

mapping 76-29, 77-55

measurement 71-1, 74-1, 75-2

sensitive 71-1

variation 76-29

tertiary 81-1

test chip 77-27, 78-40, 81-9,-10,-11,-12, 82-31,-32,-51,-52,

83-39 , -40 , -41 , -43 , 84-13 , -37 , -43 , -44 , -48

,

85-21 , -22 , -24 , -28 , -34 , -36

circuit 83-28

method 79-34,-54, 80-11,-46, 81-18,-19, 83-8,-42

pattern 74-2, 75-3, 76-3, -6, -8, -32, 77-6, -7, -49, 78-5,-37,-52,-65,

79-

7

, -8 , -33 , -34 , -46 , -47

,

80-

6,-24,

81-

12,-19,-20,-35,-36,-38,-46,

82-

40,-52, 83-40, 84-13,-37, 85-33,-34

structure 75-22, 76-3, -8, 77-13, 78-8,-40,-65,

79-

2, -7, -8, -33, -46, -47,

80-

6,-10,-11,-12,-13,-24,

81-

9,-10,-11,-16,-18,-19,-20,-27,-35,-36,-38,-39,-40,

82-

6

, -31 , -32 , -33 , -40 , 83-32 ,-39,-41, -44

,

84-

13,-27,-37,-39,-48,

85-

21 , -22 , -23 , -24 , -28 , -33 , -34 , -36 , -47

testing 62-3, 66-8, 72-8, -9, 73-8, 79-31, 81-4

theory 62-3, 66-8

thermal analysis 84-1

annealing 81-22

breakdown 67-3

characterization 74-1, 75-2

chuck 78-27

instability 71-5, 72-5, 76-2,-14, 77-2, -4, -48, 84-26

measurement 82-29, 84-35, 85-32

modeling 82-29, 84-35, 85-32

oxidation 77-43, 79-35

oxide 78-58

property 75-1

resistance 75-18, 76-27, 77-2, -4, 79-45, 81-5,-16,

82-3,-29, 84-1,-35, 85-32

response 74-1, 75-2

98
u

thermal shock 80-25, 82-11,-15

test chip 82-29, 84-35, 85-32

wafer chuck 79-28,-29

thermally grown Si02 77-26, 80-57

grown deposition 75-11

stimulated capacitance 78-30

current 78-30

measurement 78-26,-27,-28,-29,-41, 79-28,-29,-36,-42,

82-30

thermocompression 77-29

thermographic phosphor 71-1

thermometry 82-30

thickness 83-19, 84-12

thin Si02 f i Im 79-21, 80-22

film 76-34, 78-60, 79-50,-55, 80-17,-19,-62, 82-7, 84-12

adhesion measurement 78-50

threshold adhesion failure 78-50

voltage 84-11

thyristor 78-2,-56, 79-52, 80-18,-38

material 77-3, 81-28

measurement 77-3, 78-49, 79-41, 80-45

time-shared computer 69-3, 70-2

topography 85-16

total dose 77-20, 83-13

trace analysis 77-11, 82-24

tracer 62-4

transducer 78-23

transient capacitance 81-28, 82-44, 84-45

spectroscopy 82-43

thermal response 74-1, 75-2

transition metal 85-38

transistor 62-3, -4, 64-3, 65-1, 66-7, -8, -9, -10, 67-3, -4, 68-8,

72-7, 73-4, -6, 75-1,-17, 76-28, 77-38,

78-3,-34, 79-3, -6, -8, -45, -52, 80-59

chip temperature 71-1

curve 62-4

die attachment 73-5

fabrication 74-10

gain 78-5

turn-off 84-9

transmission illumination 77-46

transport 85-40

trap 71-6, 72-12

density 84-6

TTL 78-5, 81-30

tunneling 62-1

turn off 85-11

two dimensional array 82-23

model 83-42, 84-47, 85-26,-40

layer structure 78-33, 80-33

probe 64-5, 79-14, 83-12

terminal device 63-2

U

UHF transistor measurement 76-28,-30

ultrasonic bonding 71-2, 72-2, 73-2, -3, -4,

cleaning 82-12

76-1, 77-29, 78-17,-18

99
V

ultrasonic fatigue 74-8

imaging technology 79-43

ultrathin film 85-12

ultraviolet reflectance 80-16

uncertainty 82-10

university 79-13

collaboration 81-43

U.S.S.R. 71-4, 78-36

uv photoelectron spectroscopy 77-30

V

vacancy 80-36

vacuum 84-20

valence band 81-33

state 81-3

van der Pauw measurement 83-29

structure 77-13, 78-7, -8

Van Kreveld’s law 80-42, 81-42

varistor 79-51

VDMOS 81-7, 82-3

vibration 80-25, 82-11,-15

vibrational model 85-15

vibronic coupline 78-42

visual alignment 79-46

structure 77-49

GC^ 75*4

VLSI 78-9,-17, 80-10, 83-45, 84-22, 85-22,-23

contact reliability 83-35

metallization 83-35

package 82-12,-29, 84-35, 85-32

processing 78-13, 79-15

voltage contrast 77-14

variable resistor 79-51

W

wafer 82-12

chuck 81-19

diagnostics 78-11

map 81-36, 82-23,-52, 83-32,-33, 85-23

probe station 81-19

prober 79-28

scanning 80-32

testing 78-37

water vapor 62-2, 63-1

weak inversion measurement 84-21

weld 81-25

welding 72-2, 77-29

mechanism 72-2

wire 77-29

bond degradation 72-8

failure 72-8, -9, 73-7

test 73-7, 74-9

bonding 71-2, 72-2, -9, 73-2, -3, -7, -8, 74-7, -8, 76-1, 78-17,-18,

81-16, 82-12, 83-25

100
work damage 80-16

workshops 77-53

X

X

X-band measurement 76-21

XPS 78-16, 79-21,-22, 80-22,-23, 80-57, 81-51,-55

x-ray 85-16

exposure 78-14

lithography 78-14, 79-17

topography 66-10

Y

yield 79-8

analysis 80-12

Yukawa potential 81-2, -3, 82-22, 83-30

Z

zinc oxide 79-51

implanted silicon 75-14

101
NBS-n4A (REV. 2-ec) U.S. DEPT. OF COMM.

BIBLIOGRAPHIC DATA

SHEET (See instructions)

4. TITLE AND SUBTITLE

PUBLICATION OR

REPORT NO.

NBSIR-86/3464

2. Performing Organ. Report No. 3. Publication Date

October 1986

Semiconductor Measurement Technology: A Bibliography of NBS Publications for

the Years 1962-1985

5. AUTHOR(S)

E. Jane Walters, Editor

6. PERFORMING ORGANIZATION (If joint or other than NBS, see in struction s) 7. Contract/ Grant No. NATIONAL BUREAU OF STANDARDS

DEPARTMENT OF COMMERCE 8. Type of Report & Period Covered

WASHINGTON, D.C. 20234

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street, City. State. ZIP)

10. SUPPLEMENTARY NOTES

I I Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bibliography or literature survey, mention it here)

This bibliography contains reports of work performed at the National Bureau of

Standards in the field of Semiconductor Measurement Technology in the period

from 1962 through December 1985.

12. KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolon tj analysis techniques; bibliography; device physics and modeling; dimensional metrology; gallium arsenide materials; insulators and interfaces; integrated circuit test

structures; packaging; power devices; publication list; semiconductor metrology;

13. availability Silicon mareriais 14. NO. OF

PRINTED pages

1 Unlimited

1

1 For Official Distribution. Do Not Release to NTIS

1 1 Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C. 20402.

105

15. Pr.ce

[j^ Order From National Technical Information Service (NTIS), Springfield. VA. 22161

T