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PUBLICATIONS

81 - 2230-3

Semiconductor Technology

Program

Progress Briefs

NATIONAL PIIUAI or STAMlkASM

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U S. DEPARTMENT OF COMMERCE

National Bureau of Standards

National Engineering Laboratory Center for Electronics and Electrical Engineering

Semiconductor Devices and Circuits Division and

Semiconductor Materials and Processes Division

November 1981

•GOTM

100

. U56

81-2230-3

1981

c, 2

Prepared for The National Bureau of Standards

The Defense Advanced Research Projects Agency

The Division of Electric Energy Systems, Department of Energy

The Defense Nuclear Agency

The Charles Stark Draper Laboratory

The Naval Weapons Support Center

MM»Solar Energy Research Institute

Lewis Research Center, National Aeronautics & Space Administration

Naval Ocean Systems Center
SEMICONDUCTOR TECHNOLOGY PROGRAM

TABLE OF CONTENTS

Bandgap Narrowing Effects in Silicon .

Arsenic-Implanted Profiles in Silicon

Electrical Linewidth Uniformity Evaluation

Linewidth Measurement and Coherence .

Semi-Insulating GaAs Characterization

Automatic Spectroscopic Ellipsometer .

Erratum in ASTM F 723-81

Recent Publications

Publications in Press

ABSTRACT - This report provides information

on the current status of NBS work on mea- surement technology for semiconductor materials, process control, and devices. Emphasis is placed on silicon and silicon-based

3 devices. Highlighted activities include

semi -insulating GaAs characterization, an

4 automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence,

bandgap narrowing effects in silicon, the

5 evaluation of electrical linewidth uniformity, and arsenic-implanted profiles in sili6 con. In addition, recent publications and publications in press are listed. The re8 port is not meant to be exhaustive; contacts for obtaining further information are

9 listed.

10

KEY WORDS - Electronics; integrated circuits; measurement technology; microelec10 tronics; semiconductor devices; semiconductor materials; semiconductor process con10 trol; silicon.

Preface

This report covers results of work during the fifty-second quarter of the NBS Semiconductor

Technology Program. This Program serves to focus NBS research on improved measurement

technology for the use of the semiconductor device community in specifying materials,

equipment, and devices in national and international commerce, and in monitoring and con- trolling device fabrication and assembly. This research leads to carefully evaluated,

well-documented test procedures and associated technology which, when applied by the industry, are expected to contribute to higher yields, lower cost, and higher reliability of semiconductor devices and to provide a basis for controlled improvements in fabrication processes and device performance. By providing a common basis for the purchase specifications of government agencies, improved measurement technology also leads to greater economy

in government procurement. Financial support of the Program is provided by a variety of Federal agencies. The sponsor of each technical project is identified at the end of each

entry in accordance with the following code: 1. The National Bureau of Standards; 2. The Defense Advanced Research Projects Agency; 3. The Division of Electric Energy Systems,

Department of Energy; 5. The Defense Nuclear Agency; 6. The C. S. Draper Laboratory; 10. The Naval Weapons Support Center; 11. The Solar Energy Research Institute; 13. The Lewis

Research Center, National Aeronautics and Space Administration; and 15. The Naval Ocean Systems Center. This report is provided to disseminate results rapidly to the semiconductor community. It

is not meant to be complete; in particular, references to prior work either at NBS or elsewhere are omitted. The Program is a continuing one; the results and conclusions reported

herein are subject to modification and refinement. Further information may be obtained by

referring to more formal technical publications or directly from responsible staff members,

telephone: (301) 921-listed extension. General information, past issues of progress

briefs, and a list of publications may be obtained from the Semiconductor Materials and Processes Division, National Bureau of Standards, Washington, D.C. 20234, telephone:

(301) 921-3786.

2
Semiconductor Technology Program

Progress Briefs

<NBS> NBS

Bandgap Narrowing Effects in Silicon

The effects of heavy doping on the density of states and the energy bands are important for the interpretation of

device behavior. The average shift of

the conduction and valence bands due to the interaction of electrons and holes

with donor impurities has been calculated by using a partial wave analysis.

In order to demonstrate feasibility, or proof of concept, this work was re- stricted initially to states near the

band edge since only the £ = 0 partial

wave would be important. The model

Yukawa potential was also approximated

with a potential due to Bargmann for

which the £ = 0 phase shift for the

latter potential can, unlike that for

the Yukawa potential, be expressed as a function of the wavenumber in closed

form. This decreased the computational

expense considerably. The success of

the above method justified the following

improvements. The range of validity in

wavenumber was extended by including the

partial waves with £ = 1 and £ = 2 as well as £ = 0. The Yukawa potential was also used throughout since numerical

solutions for the phase shifts are necessary whenever £ > 1 even for the potential due to Bargmann. An additional

refinement has been the self-consistent

calculation of the screening length

associated with the Yukawa potential by

satisfying the Friedel sum rule. The

results of this calculation show important differences between this technique

and the Fermi -Thomas approach.

The shifts in the energy gap resulting

from these calculations are smaller than

the shifts measured optically. The

difference between the experimental data

and these results is due to many body

effects, primarily exchange and correlation. In fact, the results of Mahan for

these contributions, which are valid at

0 K, when added to these results yield

good agreement with the data at 0 K. At room temperature, it is not possible to make such a direct comparison. Good

agreement also is obtained between these

results for the Fermi energy measured

with respect to the conduction band edge

and the corresponding optical data. The

bandgaps from optical data are much

smaller than the bandgaps from electron

device experiments. The implication is

that other effects, such as variation of

the recombination lifetime, should be

included in the analysis of the electrical measurements.

An important result of these calculations is that not only is the energy gap

narrowed, but the shape of the bands is

changed as well. If one were to try to fit parabolic bands to the perturbed

bands over a given region necessary for

computations, the effective mass of the new parabolic bands would be different

from the unperturbed values and would

depend upon the extent of the region

fitted.

These results have been applied to process modeling by considering the effect

of bandgap narrowing on the diffusion

coefficients of donor ions at processing temperatures. These coefficients

depend strongly on the ratio of the

electron density to the intrinsic carrier density. An important question is

whether bandgap narrowing effects significantly alter the interpretation of

diffusion data as would be implied by

the results of other workers for donor

and vacancy activity coefficients. The

result of applying this model to a sample containing a donor density of

1.0 x 1020 cm ^ at 1 1 00°C is a bandgap

reduction, -AEg, of 123 meV. However,

the ratio of the effective intrinsic

carrier density, n-^ e to the undoped

value, n^ , is only 1.15, which is much

less than one obtains from the expres3
sion exp( -AEg/2kT) , i.e., 1.68. The reason for this large difference is that

the density of states is highly distorted from its parabolic form. The

model described here is very different

from previous models and in general

yields much smaller values of the ratio

n ie/ni* [Sponsor: 1] (J. R. Lowney and H. S. Bennett, x3625)

Arsenic-Implanted Profiles in Silicon

Device performance will become more sensitive to the three-dimensional nature of implanted and annealed distribution of the dopants with the trend toward smaller device dimensions for very

high speed, very large scale integrated

circuits. This may serve as the limiting factor in device performance. The

two-dimensional distribution of arsenic

implanted into silicon was studied in

this work.

The basis of the present understanding

of the vertical distribution of ions

implanted into an amorphous target is

the Winterbon code which is based upon

the numerical solution of the Boltzmann

equation for the moments of the distribution. Extension of these calculations

to two dimensions is nontrivial. However, there are Monte Carlo codes, specifically the TRIM (Transport of Ions into Matter) due to Biersack and Haggmark, which may be used to construct the

two-dimensional distribution of ions

implanted into amorphous targets. Both

of these codes have been used to construct the vertical distribution of

arsenic implanted into silicon at 150

keV and yield similar results for the same choice of the ion-atom potential.

In addition, these results have been

compared with experimental data from

SIMS and the three are in good agreement

with one another. Further, the TRIM

code has been used to construct the twodimensional distribution of arsenic

implants and these results serve as the

basis for a physical understanding of

the experimental results discussed

here.

In addition, the predictions of the

SUPREM-II code for process modeling

supplemented with the more recent understanding of the arsenic diffusion process have been employed in the evaluation of the results of annealing studies

of arsenic-implanted regions.

In the experimental study, specially

prepared specimens fabricated at Hughes

Research Laboratories were employed.

Specifically, boron-doped silicon wafers

were prepared with a grating pattern

structure on the surface. This pattern

served to mask out the incident arsenic

ions during the implantation process

allowing the arsenic to enter only the

silicon lattice in parallel stripe regions. The wafers were annealed under

various time -temperature conditions in

order to ascertain the effects of the

anneal cycle on the distribution of the

arsenic atoms due to both the original

implantation process and the annealinduced redistribution.

After the patterned wafers had been

implanted and annealed, the photoresist

and aluminum stripe pattern were removed

and the wafers were cleaned with standard peroxide solutions. Finally, the

wafers were cleaved perpendicular to the

qrating fingers. Two anneal temperatures were used in the study: 600°C, to remove the initial implant damage and to activate the arsenic with minimal redistribution; and 1000°C, to determine the

effect of the anneal -induced diffusion

on the final junction location (both

vertical and lateral). To determine the

junction location, both etch and EBIC

(Electron Beam Induced Current) techniques were used. It is important to note that this is the first time that

these techniques have been used in the

depth scale required for VLSI and VHSIC

structure investigation.

The etch technique, even though there were some problems with the application

of "wet chemistry" to submicrometer

dimensions, showed that the 600°C an- nealed arsenic had no appreciable signs

of lateral channeling, while the 1000°C

4
annealed arsenic had significant signs

of lateral diffusion.

The EBIC data are in substantial agreement with this conclusion. In principle, the EBIC data should be able to provide not only the location of the

vertical and lateral junction but also

the distribution of activated dopants.

However, this requires the numerical

solution of the semiconductor transport

equations in the presence of electronhole pair generation due to the electron

beam.

The above observations are in substantive agreement with the results of the

two-dimensional Monte Carlo (TRIM) calculations in that they show very little

lateral spreading of arsenic when implanted into silicon. This can be un- derstood on the grounds that arsenic is more massive than silicon and is unlikely to be deflected in the lateral direction by the silicon atoms. On the other

hand, dopants lighter than silicon,

boron, for example, might show appreciable lateral spreading. The diffusion

predictions of the augmented SUPREM-II

code agrees well with the vertical junction location. [Sponsor: 15]

(J. Albers, J. R. Ehrstein,

D. R. Myers,* and P. Roitman, x3625)

Electrical Linewidth Uniformity Evaluation

An electrical measurement method using

the cross-bridge test structure to evaluate linewidth variation associated with

integrated circuit lithography has been

developed. Arrays of identical crossbridge resistors were patterned in an aluminum layer on a silicon wafer using

a single photomask. Electrical test

results from these structures were used

to measure the uniformity of the linewidth across a wafer and across a chip.

The data were analyzed to evaluate the

linewidth uniformity of a step-andrepeat system. Techniques were developed to identify and remove systematic

linewidth variations introduced by other

Present address: Sandia Laboratories, Albuquerque,

New Mexico.

aspects of the photolithography process

and to determine the precision of the

measurement.

Analysis was made from data of test

chip NBS-23. NBS-23 is a test chip

consisting of an 20 by 12 array of identical cross bridges with design linewidths of 6 pm. The array fits within a square 250 mil (6.35 mm) on a side and

is repeated across the photomask. A wafer is then fabricated by delineating

the cross bridges (using contact printing and wet chemical etching) in an 800- nm thick aluminum film evaporated on an oxidized silicon wafer. The automated

dc test system used to make the measure- ments consists of a minicomputercontrolled wafer prober, scanners, digital current source, and digital voltmeter. Approximately 3 s were required

to measure each cross bridge.

In order to determine linewidth uniformity with this test chip, it is important

to know the measurement precision which

determines the achievable resolution.

Linewidth measurement precision is limited by the test system and the test

structure. The precision of the test

system was determined by repeated measurements of the electrical linewidth on the same cross bridge and a computation

of the sample standard deviation. The

precision was found to be 0.002 ym (la)

for sixty measurements. To determine

the usable precision of the test structure, a sample of the measurement data

was analyzed. Test results from one row

of cross bridges across the wafer representing seven adjacent test chips, each

chip containing 20 cross bridges, are shown in the accompanying figure. Three

types of variations can be seen: a random variation, a systematic intrachip

variation, and a systematic intrawafer

variation. The magnitude of the random

variation determines the achievable

measurement precision of the test structure. To estimate the magnitude of the

random variations correctly, the systematic variations in the data must be

removed. This was accomplished by fitting the data to a fourth-degree poly5
NBS-23 data of linewidth measurements

from one row across the center of the

wafer ( 0) and the fitted function.

and substrate, respectively, and <(> 0 is

the optical phase difference at the line

edge which occurs on reflectance (or

transmittance). It has now been shown

that this equation is a special case of

a more general expression for determining the threshold corresponding to the

line edge location which can be applied

to any state of partial coherence and

allows the inclusion of known optical

aberrations such as defocus. In the more general case, the threshold Tpc

is defined as the ratio of the optical

intensity in the image at the line edge

to the reflected (or transmitted) optical intensity from the substrate, i.e.,

using a Fourier series representation of

the image,

nomial which estimated the intrawafer

and intrachip variation. The result of

this fit can also be seen in the figure

in the form of the connected line which

is the sum of the two estimated mathematical functions. The residual standard deviation after subtracting the

estimated functions from the original

data is 0.03 pm (la).

Electrical linewidth measurements with

the cross -bridge test structures fabricated on silicon wafers can resolve

variations in linewidth to a precision

of 0.03 pm (la). This level of precision allows this technique to be used as

a valuable tool for evaluating the performance of lithography systems capable

of submicrometer resolution. [Sponsor:

1] (D. Yen and L. W. Linholm, x3541)

\ ' unW

/ j n P n=-“ •P = . — PC <*> '

n=-<» where the linewidth is W and the period

P can be chosen arbitrarily large to describe isolated lines. For partially

coherent illumination, the Fourier coefficients bn are given by

b = A A t(-£; O) n no v P

1

Linewidth Measurement and Coherence

Earlier work on optical methods for

linewidth measurement for IC photomasks

and wafers led to the development of the

method of coherent edge detection. In the coherent case, the optical intensity

or threshold corresponding to edge location was given by

where I0 and IM are the reflectances

(or transmittances) of the etched layer

A

o

i

1 + Vv^exp(i<t

’o

) } '

A

n =

h

1 -vvjm exp<ivi •

This equation assumes well-resolved

lines where, for convenience only, the

linewidth has been taken to be half the

6
period (W/P = 1/2). The function T is

called the transmission cross coefficient and characterizes the 2-D (twodimensional) optical system including

the partial coherence in the illumination. For a 1-D (one-dimensional) line

object

OO 00

T Ui, 5 2 ) = / / A(CMi"M 5 1 + 5", n")

x f*(c 2 + V', n") d5" dn" , where A (£", n") is the 2-D intensity

distribution in the condenser aperture

(wide-field Kohler or critical illumination assumed). The function A is sometimes called the effective source (assumed to be incoherent; i.e., the coherence interval is small compared to the

effective source size). F is the pupil

function of the optical system in nor- malized coordinates.

Even with spatially incoherent sources,

a finite degree of partial coherence is

generated with propagation of light

through the optical system due to the

finite dimensions of the source and

apertures. For wide-field microscope

illumination, and either critical or Kohler illumination, the degree of coherence (spatial) is determined by the

ratio of condenser to objective numerical aperture, frequently called the

coherence parameter R. The transmission

cross coefficients represent a correlation of these aperture functions. In the first figure, Tpc is plotted for

matched condenser and objective numerical apertures. Imaging with matched

apertures was once thought to be "incoherent." However, the obvious sensitivity of the edge detection threshold to the optical phase difference at the line

edge is further proof that this is not

the case, and the matched aperture con- dition instead represents an intermediate case of partially coherent imaging.

The 33% threshold used for edge detection with matched apertures was first

noted by Charman. As may be seen in the

figure, a 33% threshold applies only to

Threshold TpC corresponding to edge

location for coherence parameter R = 1 as a function of T 0 ( 1 o/ 1 M > • Curve-to-curve parameter is optical

phase difference <J>o J a) 11 / *>) tt /2 , c)

0. The 50% incoherent edge detection

threshold is shown (curve d) for comparison.

high contrast (Iq/Im = 0 ) line objects where the optical phase difference

may be ignored.

Although it is not possible to achieve

effectively incoherent illumination in

high resolution wide-field microscopy

(with a dry objective, 0.9 N.A., R values appreciably greater than 1.0 are not

possible), it is of interest to many

microscopists to determine the value of R required for effectively incoherent

illumination. The second figure (next

page) shows the threshold variation for

R = 2. This figure indicates that a phase difference of it, which should not

be visible in incoherent illumination,

for R = 2 would image as a dark line

with a modulation of 12% and thus would

be visible to the eye as well as to a photodetector. Therefore, effective incoherence for sharp edges requires an R value greater than 2. The formalism of the transmission crosscoefficients allows the inclusion of

optical aberrations such as defocus in

7
To

terms of the pupil function of the imaging optics. For defocus, the pupil

function becomes

Fdefocu!p) = 6XP ( ika2P 2

) P = U2 + P

2

) where a

2 indicates the amount of defocus

in waves (units of wavelength) and k is

the wave number. The third figure shows

the variation of the edge detection

threshold with focus for selected values

of T0 and <j> 0

. Note that with increased coherence the edge detection

threshold is less sensitive to defocus

and thus measurement precision improves.

[Sponsor: 1] (D. Nyyssonen, x3621

)

Semi-Insulating GaAs Characterization

Threshold TPC corresponding to edge

location for coherence parameter R = 2 as a function of Tq (Iq/I m ).

Curve-to-curve parameter is optical

phase difference 4> 0: a

)

it, b) ir/2, c)

0. The 50% incoherent edge detection

threshold is shown ( curve d) for comparison.

A measurement technique for characterizing electrically active traps in

semi -insulating (SI) semiconductors has

shown potential for further development.

The technique, termed photoinduced

resistance-deep level transient spectroscopy ( PR-DLTS ) , permits electrical

characterization of high resistivity

semiconductors such as SI GaAs, for

which many conventional electrical techniques are inadequate. In PR-DLTS,

monochromatic light is used to create

excess free carriers in the material

which are then trapped by the deep levels. After the light is extinguished,

the excess free carriers recombine, and

there occurs a transient change in the

specimen conductivity as the carriers,

trapped at the deep levels, are emitted

and the system returns to thermodynamic

equilibrium. The rate at which the

trapped carriers are emitted is a characteristic function of the particular

trap involved and the temperature. This

emission rate is measured as a function

of temperature resulting in a signature

of the particular trapping center. Variation of TPq with defocus parameter a

2 for T0

= 0.1, for different R values: dashed lines R = 1/5, solid

lines R = 2/3. The coherent edge detection threshold Tq is indicated in each case and is equivalent to the value of

TPC for zero defocus and R = 1/5.

The transient conductance is measured in

an impedance bridge at 10 MHz and signal

processing is performed as in conventional DLTS . In the PR-DLTS measurement, however, specimen capacitance is

fixed by a parallel plate test structure

with the SI GaAs assuming the role of a

8
Photoinduced resistance-DLTS measurement

of semi- insulating GaAs for LEC-grown

material (a) and HB-grown material (b).

dielectric. Light illuminates the SI GaAs surface through spaces in an alumi- num grid contact. By phase-sensitive rf

detection techniques the resistive portion of the transient is monitored as opposed to the capacitive portion in

conventional DLTS. Results to date show

that the method is capable of discriminating between variously grown specimens

of SI GaAs as displayed in the accom- panying figure. PR-DLTS spectra are presented for two specimens of SI GaAs

grown by the same manufacturer, but by

two different techniques: liquid encapsulated Czochralski (LEC) and horizontal

Bridgman (HB). As can be seen, four

peaks are evident in both the LEC and HB

spectra, each peak corresponding to a specific deep level. Interpretation of

these data in terms of particular impurities, densities, and energy levels has

not yet been established.

PR-DLTS shows promise as a tool to electrically characterize device starting

material as well as to correlate material properties with device performance

parameters. It offers the advantage,

over other electrical and photoelectronic methods, of noncritical contacts. Hie system is also readily con- structed by simple modifications of a conventional DLTS system.

Recent findings have shown the PR-DLTS

spectra to be a function of light excitation wavelength, intensity, and duration. These effects are presently being

examined. In addition, experiments are planned to correlate the PR-DLTS data

with other electrical, optical, and

physical measurement techniques as well

as to interpret the results in terms of

specific deep level states. [Sponsor:

1] (A. C. Seabaugh, x3625)

Automatic Spectroscopic Ellipsometer

A new scanning automatic spectroscopic

ellipsometer is being built in the Semiconductor Materials and Processes Division. This ellipsometer will be a variable angle of incidence instrument that can be run in either an automated principal angle of incidence mode, rotating

analyzer mode, or conventional automatic

null mode. Each method has its own advantages depending upon the user's

needs, but an important feature will be

the ability to intercompare these methods. The mechanical design is one based

on rotating goniometers powered by stepping motors as used, for example, in x- ray diffraction instruments. The goniometers have very high accuracy and

precision required for this ellipsometer. The light sources will be a standard HeNe laser (632.8-nm wavelength)

and also a HeCd (441.6-nm wavelength)

laser. In addition, a prism-grating

monochromator (186- to 2650-nm wavelength, corresponding to 6.7 to 0.47 eV)

will be used for spectroscopic studies.

The optics will include standard ellipsometric polarizers and compensators.

The automation will be carried out by

the use of a computer interfaced to address the components of the instrument, which include the stepping motor

controlled goniometers and a photomultiplier or solid-state light detector.

9
Communications from readers having an interest in precise ellipsometric mea- surements are welcomed. [Sponsor: 1] (G. A. Candela and D. Horowitz, x3625)

Erratum in ASTM F 723-81

A printing error exists in ASTM F 723-81

for conversion between resistivity and

dopant density. This standard practice

is based on NBS data. The correct equation to convert resistivity to dopant

density for boron-doped silicon is:

N _

1 . 330 x IQ 16 + 1.0824 x IQ17

p p(l + (54.56 p) 1 * 105

] [Sponsors: 1,2] (J. R. Ehrstein, x3625)

Recent Publications . .

.

Wilson, C. L. , and Blue, J. L. , Semiconductor Device Simulation, Proc.

Conf. Elliptic Problem Solvers

,

Sante Fe, New Mexico, June 30-July 2, 1980, pp. 435-439 (Academic Press, New

York )

.

Bullis, W. M., and Scace, R. I., The

Department of Commerce and the Role of

Government Standards, Chapter in

VLSI Electronics, Microstructure

Science, Vol. 1, Norman G. Einspruch, Ed. (Academic Press, New York,

1981) (same as NBSIR 80-2057).

Myers, D. R. , Wilson, R. G. , and Comas,

J. , Effect of Silicon Dioxide SurfaceLayer Thickness on Boron Profiles for

Directly Aligned Implants Into (110)

Silicon, I . Appl . Phys. 52, 3357-

3359 (May 1981 ). Buehler, M. G. , and Perloff, D. S.,

Microelectronic Test Chips and Associated Parametric Testers: Present and

Future, Semiconductor Silicon/1981,

H. R. Huff, R. J. Kriegler, and Y. Takeishi, Eds., pp. 859-867 (ECS, Pennington, New Jersey, May 1981).

Linholm, L. W. , Mattis, R. L. , Frisch,

R. C., and Reeves, C. P. , Characterizing and Analyzing Critical Integrated

Circuit Process Parameters, Semiconductor Silicon/1981, H. R. Huff, R.

J. Kriegler, and Y. Takeishi, Eds., pp. 906-920 (ECS, Pennington, New Jersey,

May 1981).

Berning, D. W. , and Blackburn, D. L.

,

The Effect of Magnetic Package Leads on the Measurement of Thermal Resistance

of Semiconductor Devices, IEEE

Trans . Electron Devices ed-28, 609-

611 (May 1981).

Larrabee, R. D. , Thurber, W. R. , and

Bullis, W. M. , Electrical Parameters of

Extrinsic Silicon, Circuits Manufacturing _21_ ( 5) , 92-100 (May 1981).

Buehler, M. G. , and Linholm, L. W.,

Toward a Standard Test Chip Methodology

for Reliable, Custom Integrated Circuits, Proc. 1981 Custom Integrated

Circuits Conf., Rochester, New York,

May 11-13, 1981, pp. 142-146.

Peckerar, M. C., and Galloway, K. F.,

Informal Survey of Federal Government

Microelectronics Processing Facilities, Proc. 4th Biennial University/Government/Industry Microelectronics

Syrrrp., Mississippi State University,

May 1981, pp. III-24 - III-30.

Forman, R. A., Myers, D. R. , and Bell,

M. I., Comments on "Raman Scattering

from Boron-Implanted Laser Annealed

Silicon," J. Appl. Phys. 52,

4337-4339 (June 1981).

Lowney, J. R. , Kahn, A. H. , Blue, J. L.

,

and Wilson, C. L. , Disappearance of

Impurity Levels in Silicon and Germani- um Due to Screening, J . Appl.

Phys. 52, 4075-4080 (June 1981).

Ruthberg, S., Graphical Solution for the

Back Pressurization Method of Hermetic

Test, IEEE Trans. Components, Hybrids, and Manufacturing Tech, chmt-

_4, 217-224 (June 1981).

Publications in Press . .

.

Albers, J. , Probe-Spacing Experiment

Simulation and the Relation Between

Spreading Resistance and Sheet Resistance, J. Electrochem. Soc.

Baghdadi, A., and Forman, R. A., Tertiary Interferograms in Fourier Transform

Spectroscopy, Appl. Spectrosc.

Bennett, H. S., Upper Limits for the

Number of Bound States Associated with

the Yukawa Potential, NBS J. Res . Bennett, H. S., and Lowney, J. R. , Effect of Donor Impurities on the Density

of States Near the Band Edge in Silicon, J. Appl. Phys.

Berning, D. W. , Use of Vacuum Tubes in

Test Instrumentation for Measuring

Characteristics of Fast High-Voltage

Semiconductor Devices, IEEE Trans.

(Continued on Back Cover)

1 0
NBS-114A (REV. 2-BC) U.S. DEPT. OF COMM. BIBLIOGRAPHIC DATA

SHEET (See instructions)

1. PUBLICATION OR REPORT NO. NBSIR 81-2230-3

2. Performing Organ. Report No, 3. Publication Date

November 1981

4.

TITLE AND SUBTITLE

Semiconductor Technology Program - Progress Briefs

5.

AUTHOR(S)

K. F. Galloway, R. T. Scace, and E. J. Walters, Editors

6.

PERFORMING ORGANIZATION (If joint or other than NBS. see instructions)

NATIONAL BUREAU OF STANDARDS DEPARTMENT OF COMMERCE

WASHINGTON, D.C. 20234

7. Contract/Grant No.

S. Type of Report & Period Covered Interim

4/1/81 to 6/30/81

9.

SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City. Stote. ZIP)

NBS, Washington, DC 20234) ARPA, Arlington, VA 22209) Dept, of Energy, Division of Electric Energy Systems, Washington, DC

20545) CNA, Attni Comp-3, Washington, DC 20305) C. S. Draper Laboratory, Cambridge, MA 02139) NWSC, Crane, IN 47S22)

SERI, Golden, CO 80401) NASA-Lewls Research Center, Cleveland, OH 44135) NOSC, San Diego, CA 92152.

10.

SUPPLEMENTARY NOTES

ARPA Order 3802) Dept, of Energy, Interagency Agreement DE-AI05-81 -OR 20849 Task 1) DNA IACRO 81-820, Subtask No. X99QAXVB)

C. S. Draper Laboratory, P.O. DL-H-182632 (Navy contract N 00030-79-C-0096) ) NWSC, P.O. N001 6481 WR3001 9) SERI, DS-0-9313 and

EG— 77-C-01 -4042) NASA-Lewls, C-32818-D, Modification il) NOSC, MIPR N66001 80MP00001 7.

| | Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11.

ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant bibliography or literature survey , mention it here) This report provides information on the current status of NBS work on measurement

technology for semiconductor materials, process control, and devices. Emphasis is placed on silicon and silicon-based devices. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer

,

linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenic-implanted profiles in silicon. In addition, recent publications and publications in press are listed. The

report is not meant to be exhaustive; contacts for obtaining further information are listed.

12. KEY WORDS (Six to twelve entries; alphabet ical order; capitalize only prop er names; and separate key words by semicolons ) Electronics; integrated circuits; measurement technology; microelectronics

;

semiconductor devices; semiconductor materials; semiconductor process control;

gi 1 i mn.

13. AVAILABILITY

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11 USCOMM-DC 6043-P80
(Continued from Page 10) Instrum. & Measurement.

Blackburn, D, L,, Robbins, T, C., and

Galloway, K. F., VDMOS Power Transistor

Drain-Source Resistance Radiation De- pendence, IEEE Trans. Nucl. Sci.

Buehler, M. G. , and Linholm, L. W. , The

Role of Test Chips in Coordinating

Logic Design and Layout Aids for VLSI, Proa. 2nd Cal. Tech. Conf. on VLSI

,

Pasadena, California, January 1981. Bullis, W. M., Trends in Integrated

Circuit Metrology, EDN Magazine.

Bullis, W. M. , and Nyyssonen, D. , Optical Linewidth Measurements on Photomasks and Wafers, Chapter in VLSI

Electronics, Microstructure Science,

Vol. 3, Norman G. Einspruch, Ed. (Academic Press, New York).

Candela, G. A., Galloway, K. F., Liu, Y. M., and Fine, J. , Measurements of the

Interlayer Between A1 and SiC>2 Using

Ellipsometric, Capacitance-Voltage, and

Auger Electron Spectroscopy Technigues,

Thin Solid Films.

Carver, G. P. , Development of Test Structures for Characterization of the

Fabrication and Performance of

Radiation-Hardened Charge -Coupled De- vice (CCD) Imagers: Annual Report, May

15, 1980 to May 14, 1981, NBSIR 81-

2319. Harman, G. G. , The Use of Acoustic Emission as a Test Method for Microelectronic Interconnections and Joints, Proc. 2nd Intemat. Conf. Loten und

Schueissen in Per Elektronik.

Larrabee, R.D., Phillips, W. E. , and

Thurber, W. R. , Measurement Techniques

for High Power Semiconductor Materials

and Devices: Annual Report, October 1, 1979 to September 30, 1980, NBSIR 81-

2325.

Leedy, T. F. , Temperature Dependence of

Transient Electron Radiation Upset in TTL Circuits, IEEE Trans. Nucl Sci.

*Li, S. S., Conductivity Mobility, Hall

Mobility, and Resistivity in p-Type

Silicon, NBS-GCR-81 -334.

Lin, J. F., Li, -S • S . , Linares, L. C*,

and Teng, K. W. , Theoretical Analysis

of Hall Factor and Hall Mobility in pType Silicon, Solid-State Electronics.

Linholm, L. w.. Semiconductor Measurement Technology : The Design,

Testing, and Analysis of a Comprehensive Test Pattern for Measuring

CMOS/SOS Process Performance and Control, NBS Spec. Publ. 400-66.

Lowney, J. R. , and Bennett, H. S., Effect of Donor Impurities on the Conduction and Valence Bands of Silicon,

J. Appl. Phys.

McCarthy, D. , Acevedo, J. , and Herman,

D. , Advanced Planar Silicon Test Structures, NBS-GCR-81 -327.

Mitchell, M. A., Linholm, L. W., Russell, T. J. , and Carver, G. P., Electrical Test Structures for Characterization and Control of Microelectronics

Processing, Proc. Microelectronic

Measurements Technology Workshop,

San Jose, California, March 23, 1981. Phillips, W. E. , Improved Thermometry

for Deep-Level Measurements, J. Physics E. Schaff t, H. A. , Measurements for Commercial Photovoltaics, - A Status Report,

SERI. Schwarz, S. A., Helms, C. R. , Spicer, W.

E. , and Taylor, N. j. , Semiconductor

Measurement Technology: The Capabilities and Limitations of Auger Sputter

Profiling for Studies of Semiconductors, NBS Spec. Publ. 400-67.

Wilson, C. L. , and Blue, J. L. , Two- Dimensional Finite Element Charge-Sheet

Model of a Short-Channel MOS Transistor, Solid-State Electronics.

Wilson, R. G. , and Jamba, D. M.,

Semiconductor Measurement Technology:

Differential Capacitance-Voltage Pro- filing of Schottky Barrier Diodes for

Measuring Implanted Depth Distributions

in Silicon, NBS Spec. Publ. 400-71.

Reports of contract research.

U.S. DEPARTMENT OF COMMERCE, Malcolm Baldrige, Secretary

NATIONAL BUREAU OF STANDARDS, Ernest Ambler, Director