NBSIR 87-3578

Center for Electronics and

Electrical Engineering

Technical

Publication

Announcements

Covering Center Programs,

April to June 1986 with

1987 CEEE Events Calendar

June 1987

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899
INTRODUCTION TO THE CEEE TECHNICAL PUBLICATION ANNOUNCEMENTS

This is the ninth issue of a quarterly publication providing information on the technical work of the National Bureau of Standards Center for Electronics and Electrical

Engineering. This issue of the CEEE Technical Publication Announcements covers the

second quarter of calendar year 1986.

Organization of Bulletin ; This issue contains citations and abstracts for Center

papers published in the quarter. Eitries are arranged by technical topic as identified in the table of contents and alphabetically by first author within each topic.

Following each abstract is the name and telephone number of the individual to contact

for more information on the topic (usually the first author) • This issue also includes a calendar of Center conferences and workshops planned for calendar year 1987

and a list of sponsors of the work.

Center for Electronics and Electrical Engineering : Center programs provide national

reference standards, measurement methods, supporting theory and data, and traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U.S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor Technology Program, carried out by the Semiconductor Electronics Division (formerly the

Semiconductor Materials and Processes and the Semiconductor Devices and Circuits

Divisions) in Gaithersburg, MD, and the Signals and Systems Metrology Program, car- ried out by the Electrosystems Division in Gaithersburg and the Electromagnetic

Fields and Electromagnetic Technology Divisions in Boulder, CO. See the table of

contents on the opposite page for identification of the topics covered by each program, as represented in this issue. Key contacts in the Center are given on the back

cover; readers are encouraged to contact any of these individuals for further information.

Center sponsors : The Center Programs are sponsored by the National Bureau of Standards and a number of other organizations, in both the Federal and private sectors;

these are identified on page 16.

Note on Publication Lists : Guides to earlier as well as recent work are the publication lists covering the work of each division. These lists are revised and reissued

on an approximately annual basis and are available from the originating division.

The current set is identified in the Additional Information section, page 13.
CEEE Technical Publication Announcements - June 1987 Page 1

TABLE OF CONTENTS

INTRODUCTION inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM

Analysis Techniques 2

Dimensional Metrology 2

Process and Device Modeling . 3

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 4

Waveform Metrology • • • 4

Cryoelectronic Metrology • 4

Antenna Metrology • 5

Microwave and Mil lime ter-Wave Metrology •• 6

Laser Metrology 6

Optical Fiber Metrology •••• 6

Electro-Optic Metrology 7

Other Fast Signal Topics 7

ELECTRICAL SYSTEMS 8

Power Systems Metrology 8

Pulse Power Metrology •••••••• .....10

Superconductors 10

Magnetic Materials and Measurements • 11

Other Electrical Systems Topics 11

ELECTROMAGNETIC INTERFERENCE 11

Radiated Electromagnetic Interference 11

ADDITIONAL INFORMATION 13

1987 CEEE CALENDAR 14

SPONSOR LIST 16

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 2 CEEE Technical Publication Announcements - June 87

SEMICONDUCTOR TECHNOLOGY

Analysis Techniques

Baghdadi, A., Gladden, W.K. , and Flach,

D • R • , Nonlinear Effects of Digitizer

Errors in FT-IR Spectroscopy, Appl.

Spectroscopy, Vol. 40, No. 5, pp.

617-628 (1986)

This paper is an investigation of the

effects of errors in the analog- todigital converter (ADC) of a Fourier

transform infrared (FT-IR) spectrometer

on the photometric accuracy of that

spectrometer. The effect of ADC errors

on the spectrum after Fourier transformation are calculated analytically for

monochromatic, two-line and wide square

band emission spectra. Numerical modeling is used to extend the analysis to

absorption spectra, and to include the

effects of noise on the amplitude of

absorbance bands. These analyses show

that ADC errors can generate artifacts

throughout the spectrum, although the

largest effects occur at sharp spectral

features. Errors as large as 8% in the

amplitude of absorbance bands can be

produced by ADC errors of one least

significant bit (LSB) , in a 15-bit ADC.

These results were confirmed qualitatively by measuring the net height of

the oxygen vibrational band in silicon

at 1107 cm- 1 using four different ADC

circuit boards in the same FT-IR spectrometer. At the highest signal levels,

the boards disagreed by as much as 4%,

even though the static transfer characteristics of the ADC boards (which were

measured in a separate experiment) ex- hibited errors of less than ±2 LSBs.

[Contact: Aslan Baghdadi, (301)

975-2062]

Dimensional Metrology

Chandler-Horowitz , D. , Semiconductor

Measurement Technology: Analytic Analysis of Ellipsometric Errors, NBS

Special Publication 400-78 (May 1986).

A computer program is given that contains an explicit ellipsometric error

analysis. The program can identify the

ellipsometric inaccuracies for any ellipsometer, can be used to determine

which parameters contribute the most to

the overall measurement inaccuracy, and

can lead one to an optimum measurement

procedure. A FORTRAN program that performs the evaluation of the partial

derivative expressions needed to analyze

ellipsometric measurement uncertainties

is listed. The program determines the

uncertainty in the calculation of the

refractive index of a bare isotropic

substrate or the uncertainty in the

determination of the thickness and re- fractive index of a nonabsorbing film on

a substrate of known refractive index.

These are the two most commonly used

surface models used in ellipsometry

performed at a single angle of incidence

and a single wavelength. The program

input parameters include the wavelength

of the light, the angle of incidence and

its uncertainty, and the uncertainties

in the ellipsometric parameters A and if;. They also include in the ambientsubstrate model an estimated value for

the substrate' s refractive index, and in

the film- substrate model the refractive

index of the substrate and its uncertainty and estimated values for the

film's refractive index and thickness.

The case of the conventional null ellipsometer utilizing a quarter-wave plate

is treated to find the uncertainties in

A and if; from the uncertainties in the

polarizer and analyzer null values and

the waveplate constants.

[Contact: Deane Chandler-Horowitz,

(301) 975-2084]

Nyyssonen, D. , Linewidth Calibration

for Bright-Chromium Photomasks, NBSIR

86-3357 (May 1986).

Linewidth measurement errors are introduced when an anti-reflective (AR) chromium photomask standard such as the NBS

SRM 474/475 is used to calibrate an optical linewidth measurement system for

subsequent measurements on another material such as bright chromium whose optical properties (index of refraction,

thickness, reflectance, and edge geome-
CEEE Technical Publication Announcements - June 87 Page 3 Dimensional Metrology , cont'd.

try) do not match those of the calibration standard. In addition to differences in the optical properties of the

materials, the magnitude of these errors

varies from system to system and depends

upon resolution, choice of edgedetection criterion, flare light in the

optical system, and detector response.

These errors are greatest when measurements are made in reflected light due to

the greater sensitivity to the mismatch

in optical parameters of the materials

between the calibration standard (ARchromium) and the material to be measured (bright chromium). This report,

therefore, recommends use of transmitted

light for linewidth measurements on

photomasks and as close a match as possible between the material parameters of

the calibration standard and those of

the part being measured in order to

ensure a realistic assessment of the

accuracy and precision of subsequent

measurements

[Contact: Robert D. Larrabee, (301)

975-2298]

Process and Device Modeling

Hefner, A.R., and Blackburn, D.L.,

Performance Trade-Off for the Insulated

Gate Bipolar Transistor: Buffer Layer

Versus Base Lifetime Reduction, 1986

Power Electronics Specialists Conference, Vancouver, British Golumbia,

Canada, June 23, 1986, pp. 27-38

(1986) . A one-dimensional analytic model for the

Insulated Gate Bipolar Transistor ( IGBT)

which includes a high-doped buffer layer

in the low-doped bipolar transistor base

is developed. The model is used to

perform a theoretical trade-off study

between IGBTs with and without the buffer layer. The study is performed for

devices of equal breakdown voltages, and

the critical parameters chosen to

"trade-off" are turn-off switching energy loss (related to turn-off time) and

on-state voltage, both at a given current. In this study, as in reality, the

two critical parameters are varied by:

1 ) adjusting the doping concentration

and thickness of a buffer layer included

as part of the bipolar transistor base,

2) adjusting the lifetime in the low

doped bipolar transistor base with no buffer layer included, or by 3) a combination of 1 ) and 2) • The results of the

model predict that for equal breakdown

voltages, an optimized device with a buffer layer has less switching energy

loss for a given on-state voltage than

an optimized device with no buffer

layer.

[Contact: Allen R. Hefner, (301)

975-2071]

Wachnik, R.A., and Lowney, J.R., A

Model for the Charge-Pumping Current

Based on Small Rectangular Voltage

Pulses, Solid-State Electronics, Vol.

29, No. 4, pp. 447-460 (1986).

The charge-pumping current results from

recombination associated with the

Si0

2 -Si interface traps under the gate

of a me t a 1 - o x i d e - s emi c o ndu c to

r

field-effect transistor (MOSFET) when a voltage pulse is applied to the gate. A

model is proposed which predicts this

current as a function of the frequency,

amplitude, and average voltage of pulses

with peak-to-peak amplitudes less than

the difference between the flatband and

inversion voltages and with pulse

transitions fast enough so that

negligible capture or emission occurs

during the transition. The model is

based on Shockley-Read-Hall traps

segregated by energy and capture cross

section into traps which capture only

and traps which tend to emit before

capture. It predicts the dominant behavior of the measured current and with

the inclusion of surface potential fluctuations and a distribution of cross

sections it agrees very well with

experiment. Thus, the charge pumping

current due to these small rectangular

pulses can be used to determine the

density, the electron capture cross

section, and the hole capture cross

section of interface traps near midgap.

[Contact: Jeremiah R. Lowney, (301)

975-2048]
Page 4 CEEE Technical Publication Announcements - June 87

FAST SIGNAL ACQUISITION, PROCESSING,

AND TRANSMISSION

Waveform Metrology

Cans, W.L. , Calibration and Error

Analysis of a Picosecond Pulse Waveform

Measurement System at NBS, Proceedings of the IEEE, Vol. 74, No. 1, pp.

86-90 (January 1986).

The primary system used at NBS, Boulder,

CO, to measure fast (picosecond-nanosecond range), repetitive, electric

pulse parameters consists essentially of

a wide-band (dc -18 GHz) sampling oscilloscope interfaced to a minicomputer.

This paper describes the major calibration and analysis techniques used to

reduce the effects of errors inherent in

this system, both deterministic and

random in nature.

[Contact: William L. Gans, (303)

497-3538]

Lawton, R.A., An Efficient Antialiasing Filter, IEEE Transactions on

Instrumentation and Measurement, Vol.

IM-34, No. 4. , pp. 570-573 (December

1 985) . The application of a solid-state

reference filter as an efficient

antialiasing filter is described. The

analytical basis for the efficiency of

this filter is described and a specific

example of measuring a 1024-point

waveform with a resistance-capacitance

(RC) filter network and the solid-state

filter is given.

[Contact: Robert A. Lawton, (303)

497-3339]

Souders, T.M., Flach, D.R., and Schoenwetter, H.K. , Transient Respons Characterization of Waveform Recorders,

Proceedings of the 5th I EE Pulsed Power

Conference, Arlington, Virginia, June

10-12, 1985, pp. 352-355 (May 1986).

Test methods for characterizing the

transient response of waveform recorders

are presented, together with typical

test results. The methods, based on the

use of a precision, programmable step

generator developed at NBS, are suitable

for recorders having up to 10 bits of

resolution and 100 MHz bandwidth.

[Contact: T. Michael Souders, (301)

975-2406]

Turgel, R.S., NBS 50 kHz Phase Angle

Calibration Standard, NBS Technical

Note 1220 (April 1986).

A detailed description is given of the

features of an electrical phase angle

calibration standard designed for operation over a frequency span of 2 Hz to 50

kHz • Ihe phase resolution of this calibrator extends from just below 2 millidegrees at the low end of the frequency

range to about 5 millidegrees at the

high end. The uncertainty in the phase

angle is a function of frequency, amplitude, and amplitude ratio of the two

outputs. It varies from 5 to 50 millidegrees.

[Contact: Raymond S. Turgel, (301)

975-2420]

Cryoelectronic Metrology

Clark, A.F., Conference Report on the

Tenth International Cryogenic

Engineering Conference, Cryogenics,

Vol. 25, pp. 222-223 (April 1985).

The tenth International Cryogenic

Engineering Conference was held in

Otaniemi, Finland, 31 July to 3 August

1984, hosted by the Helsinki University

of Technology. More than 300 attendees

representing 22 countries contributed

220 papers on such diverse subjects as sensing human brainwaves from their

magnetic fields to superconducting magnets the size of railroad cars and to

ultralow temperature refrigerators which

can achieve nuclear temperatures of the

order of nanokelvin. The special topic

for this conference was cryogenics in

medicine, and thus many of the plenary

talks covered cryosurgery, magnetic

resonance imaging, SQUID magnetometers

for heart and brain waves, and biological preservation.

[Contact: Alan F. Clark, (303)

497-3253]
CEEE Technical Publication Announcements - June 87 Page 5

Cryoelectronic Metrology , cont'd.

Hamilton, C.A., Kautz, R.L., and Lloyd,

F.L., A Josephson Series Array Voltage Standard at One Volt, NCSL 1985

Workshop & Symposium, Boulder, Colorado, July 15-18, 1985, pp. 71-77.

Josephson voltage standards have long

been limited by their low 1- to 1 0-mV

output level. A new method for operating 1000 or more Josephson junctions in

series has produced a practical standard

at the 1 -V level. The junction array is

in the form of a microstrip which is

f inline coupled to a waveguide at one

end and is terminated at the other end.

The whole circuit is fabricated on a 6

by 12 mm silicon substrate. With applied radiation at 72 GHz, the junction

array produces up to 8000 quantized

levels at the voltages nhf/2e. (In the

U.S. 2e/h has an assigned value of

483593.420 GHz/VNBS .) By selecting

the level, n, and fine tuning the

frequency, f, any voltage from 0.1 to

1.2 V can be obtained. The high output

voltage eliminates the need for a voltage divider and greatly reduces errors

due to thermal voltages. When fully

evaluated, the new standard is expected

to have a precision of a few parts per

billion.

[Contact: Clark A. Hamilton, (303)

497-3740]

Hamilton, C.A., Kautz, R.L., Lloyd,

F.L., and Steiner, R.L. , A Practical

Josephson Voltage Standard at 1 V,

IEEE Electron Device Letters, Vol.

EDL-6, No. 12, pp. 623-625 (December

1 985)

.

A series array of 1484 pairs of Josephson junctions biased by microwaves at 72

GHz is demonstrated to provide stable

quantized voltages at the 1 -V level.

The niobium/lead-alloy junctions used in

the array are not affected by thermal

cycling.

[Contact: Clark A. Hamilton, (3 03)

497-3740]

Antenna Metrology

Jesch, R.L. , Measured Vehicular Antenna Performance, National Institute

of Justice Report-201-85 (May 1986).

[A similar paper by the same title

appeared in IEEE Transactions on

Vehicular Technology, Vol. VT-34, No.

2, pp. 97-107 (May 1985).]

Power gain radiation patterns of mobile

antennas mounted in six different locations on a test vehicle were measured

with and without typical lights and

sirens mounted on the roof. The measurements were performed at frequencies

representing the frequency bands of 25

to 50, 150 to 174, 400 to 512, and 806

to 866 MHz. In addition, the radiation

patterns were measured of three

disguised antennas operating at discrete

frequencies of 40.27, 162.475, and

416.975 MHz and one slot antenna

operating at 413 MHz. Plots of power

gain radiation patterns are given for

the mobile antennas mounted in six

different locations on the test vehicle,

for the other four antennas, and to show

the effects of improper grounding of the

trunk lid and of the lights and siren.

Recommended antenna mounting locations

are identified for specific frequency

bands and an appendix of power gain

measurement data is included.

[Contact: Ramon L. Jesch, (303)

497-3496]

Kanda, M. , Chang, D.C., and Greenlee,

D.H., The Characteristics of Iris-Fed

Millimeter-Wave Rectangular Microstrip

Patch Antennas, IEEE Transactions on

Electromagnetic Compatibility, Vol.

EMC- 27, No. 4, pp. 212-220 (November

1985)

.

The fabrication of various iris-fed

mil lime ter-wave rectangular microstrip

patch antennas is described. A

mathematical model is proposed to

describe the iris-fed antenna. An iris

having 1 5% of the area of the patch is

used to couple energy into the antenna.

Resonance of the antenna is observed to

be insensitive to the size of the iris

for irises up to 115% of the size of the

patch. A study is also made of the
Page 6 CEEE Technical Publication Announcements - June 87

Antenna Metrology , cont'd.

coupling to the antenna as a function of

position of the iris with respect to the

transverse plane of the waveguide, the

iris always being centered with respect

to the patch. In general, the antenna

has a VSWR in the waveguide feed of

roughly 5:1 at resonance, except for the

fully open waveguide which gives rise to

a VSViR of 2.9:1 at resonance. Far-field

antenna power patterns are observed to

be quite broad with H-plane beamwidths

about 1 30° . Maximum antenna gain

observed was 4.5 dB relative to an

isotropic source (dBi), with 2 dBi

typical. An initial study is made of

the microstrip patch antenna fed from a longitudinal waveguide wall. Results

indicate that this feed structure is

likely to prove valuable for microstrip

patch antennas, with coupling at least

as good as for the transverse-fed patch,

added to the possibility of feeding

multiple patches from a single

waveguide.

[Contact: Motohisa Kanda, (303)

497-5320]

Microwave & Millime ter-Wave Metrology

Holt, D.R., and Hoer, C.A., Estimation

of True Power Ratios in Six-Port Network Analyzers Using Diode Detectors,

IEEE Transactions on Instrumentation

and Measurement, Vol. IM-34, No. 4, pp.

558-563 (December 1985). [A shortened

version of this paper appeared in the

Proceedings of the IEEE Instrumentation

and Measurement Technology Conference,

Tampa, Florida, March 20-22, 1985, pp.

1 40-1 41 .

]

A model for detector nonlinearity is

included in the determination of sixport parameters without using additional

standards. A computer simulation was

performed assuming that the true power

performed assuming that the true power

into each six-port detector is related

to the power observed by the detector.

Simultaneous estimation of the six-port

and detector parameters is accomplished

through a nonlinear least-squares algorithm. Results of the simulation com- pare the reflection coefficient r com- puted from corrected power readings and

T calculated from observed power readings • [Contact: Donald R. Holt, (303)

497-3574]

Laser Metrology

Rasmussen, A.L. , and Sanders, A. A.,

Transfer Standards for Energy and Peak

Power of Low-Level 1.064 Micrometer

Laser Pulses and Continuous Wave Laser

Power, Optical Engineering, Vol. 25,

No. 2, pp. 277-285 (February 1986).

For the first time, traceable transfer

standards have been developed for measuring 1.064-ym laser pulses having

durations of about 10 to 100 ns, peak

power densities of about 1 0- 8 to 10_t+ W/cm2

, and energy density of about lO- 1 ^ to 10" 11 J/cm 2

. These power and energy

transfer standards use silicon avalanche

photodiode (APD) and PIN photodiode

detectors, respectively (PIN refers to

the detailed semiconductor structure: a "sandwich" of p-conduc tivity type material, intrinsic layer, and n-conductivity type material). These standards are

stable and have total uncertainties of

about 10%. The system for calibrating

them and other devices consists of a continuous wave (cw) Nd : YAG laser beam

acousto-optically modulated to provide

low-level laser pulses of known peak

power and energy. Using a pulse-height

analyzer readout, the PIN transfer standard system records each pulse, from

which the mean pulse energy and laser

stability may be evaluated. Using an integrating voltmeter readout, this

system can measure energy or average

power. These pulsed and cw measurement

techniques can be extended to the visible and other near-infrared wavelengths.

[Contact: Alvin L. Rasmussen, (303)

497-5367 or -3616]

Optical Fiber Metrology

Rasmussen, A.L. , and Franzen, D.L.

,
CEEE Technical Publication Announcements - June 87 Page 7

Optical Fiber Metrology , cont'd.

Low-Level Germanium Detector Transfer

Standard at 1.064 \im, NBSIR 85-3041

(January 1986).

Two PIN germanium photodiodes have been

calibrated in the 1- to 250-fJ/cm2 range

with 15 percent uncertainty for 10- to

100-ns duration, 1. 064-vim laser pulses

[PIN refers to a "sandwich" structure of

a layer of p-conduc tivity type material,

an intrinsic layer, and an n-conductivity type layer] . To do these calibrations, we used (1 ) a continuous wave

Nd:YAG laser beam acousto-optically

modulated and a PIN silicon photodiode

transfer standard to provide low-level

laser pulses of known energy and (2) a pulsed 1.06-ym LED beam. A 1-cm 2 collecting lens and a ground glass diffuser

were placed in front of each detector to

improve sensitivity and spatial uniformity, respectively. In the future, these

detectors may also be useful as transfer

standards at wavelengths out to 1.7 ym.

[Contact: Alvin L. Rasmussen, (303)

497-5367 or -3616]

Electro-Optic Metrology

Hebner, R.E., Electro-Optical Measurement Techniques, Fast Electrical and

Optical Measurements, Vol. 1, pp. 5-25

(Martinus Nijhoff, Boston, MA, 1986)

[Proceedings of the NATO Advanced Study

Institute on Fast Electrical and Optical Diagnostic Principles and Techniques] . This paper reviews the use of the Faraday effect, the Pockels effect, and the

Kerr effect to measure electric fields,

magnetic fields, voltages, currents, and

space charge density. Each of the three

effects is introduced conceptually, the

use of Jones or Mueller matrices to describe the optical system is presented,

and some applications of these effects

are described.

[Contact: Robert E. Hebner, (301)

975-2403]

Other Fast Signal Topics

Laug, O.B., Stenbakken, G.N., and Leedy,

T.F., Electrical Performance Tests

for Audio Distortion Analyzers, NBS

Technical Note 1219 (January 1986)

[previously published as NBSIR 85-3269

(November 1985)].

Electrical performance test procedures

for audio distortion analyzers were

developed by the National Bureau of

Standards for the U.S. Army Communications-Electronics Command. The report

provides detailed, step-by-step test

procedures that are based on specifications supplied by the Army for purposes

of evaluating audio distortion analyzer

bid samples. Examples of data sheets

and tables are also provided for recording interim and final results.

The report discusses the philosophy of

each measurement procedure with a view

toward providing an understanding of the

basic metrology required to perform the

measurements. In addition, the sources

of measurement error are discussed. The

primary applications and basic principles of modern audio distortion analyzers are also presented.

[Contact: Owen B. Laug, (301

)

975-2412]

Miller, C.K.S., Taggart, H.E., and

Bensema, W.D., Mobile FM Transceivers, National Institute of Justice

Standard- 021 0.00 (May 1986).

The purpose of this document is to es- tablish performance requirements and

methods of test for non-trunked, frequency modulated (FM) mobile transceivers. This standard applies to transceivers which either do not have special

subsystems such as selective signaling

or voice privacy, or in which such subsystems are bypassed or disabled during

testing for compliance with this standard. This standard supersedes NILECJSTD-0202. 00, Mobile FM Transmitters and

NILECJ-STD-0207 .00, Mobile FM Receivers. [Contact: Mark T. Ma, (303) 497-3800]
Page 8 CEEE Technical Publication Announcements - June 87

Other Fast Signal Topics , cont'd.

Miller, C.K.S., Taggart, H.E., Jesch,

R.L., and Wainright, A.E., Personal/Mobile FM Transceivers , National

Institute of Justice Standard-0224.00

(May 1 986) . The purpose of this document is to

establish performance requirements and

methods of test for non-trunked, frequency modulated (FM) personal/mobile

transceivers. This standard applies to

personal transceivers with rechargeable

batteries and personal/mobile transceivers which use a charger/mobile unit,

with or without an rf power amplifier,

and which either do not have special

subsystems such as selective signaling

or voice privacy, or in which such subsystems are bypassed or disabled during

testing for compliance with this standard. The individual personal FM transceivers are expected to meet the minimum

performance requirements as established

in NIJ Standard-0209.01 for Personal FM

Transceivers prior to being tested for

the requirements of this standard. Due

to the lack of use of personal/mobile

transceivers in the 25 to 50 MHz and 806

to 866 MHz frequency bands, requirements

for these transceivers are not included

in this standard.

[Contact: Mark T. Ma, (303) 497-3800]

ELECTRICAL SYSTEMS

Power Systems Metrology

Anderson, W.E., Ramboz , J.D. , and

On drej k a , A.R. , Final Report: Technical Contributions to the Development

of Incipient Fault Detection/Location

Instrumentation, NBSIR 86-3392 (April

1 986) . The transmission of electrical energy by

use of underground cables is increasing.

Fault location techniques have certain

limitations; incipient fault detection

and location would help reduce the

maintenance cost of these lines as well

as improve the reliability of service.

This report discusses some test results

related to radio-frequency (rf) probing

techniques applied to high-voltage

transmission lines. The high-frequency

losses and attenuation in high-voltage

cables places certain ultimate

limitations on rf-probing techniques for

incipient fault detection. Time-domain

reflectrometry methods were employed to

assess the rf-transmission properties of

high-voltage cables at frequencies up to

6 GHz. Fast Fourier transform deconvolution was used to obtain loss measurements as a function of frequency. The

loss mechanisms were identified. The

measurement hardware and methods are

discussed as well as analysis approach

leading to the conclusions.

[Contact: William E. Anderson, (301)

975-2423]

Hebner, R.E., Electro-Optical Measurement Techniques, Fast Electrical and

Optical Measurements, Vol. 1, pp. 5-25

(Martinus Nijhoff, Boston, MA, 1986)

[Proceedings of the NATO Advanced Study

Institute on Fast Electrical and Optical Diagnostic Principles and Techniques] • This paper reviews the use of the Faraday effect, the Pockels effect, and the

Kerr effect to measure electric fields,

magnetic fields, voltages, currents, and

space charge density. Each of the three

effects is introduced conceptually, the

use of Jones or Mueller matrices to describe the optical system is presented,

and some applications of these effects

are described.

[Contact: Robert E. Hebner, (301)

975-2403]

Kelley, E.F., Hebner, R.E., Fitzpatrick,

G.J. , and Forster, E.O, The Effect of

Pressure on Streamer Initiation in

n-Hexane, Proceedings of the 1 986

IEEE International Symposium on Electrical Insulation, Washington, DC, June

9-12, 1986, pp. 66-68.

High-speed photographs of the breakdown

process at pressures in the range 0.1 to

10 MPa indicate that the structure of
CEEE Technical Publication Announcements - June 87 Page 9

Power Systems Metrology , cont'd.

the streamer changes with the pressure.

The typical structures associated with

primary streamers are no longer visible

at elevated pressures. Over this range,

the average cathode streamer velocity

increases from about 0.25 km/s to 2.5

km/s. Hie anode streamer, however, does

not generally exhibit a bushy primary

streamer structure, and its velocity

appears to be less affected by pressure.

[Contact: Edward F. Kelley, (301)

975-2424 or -5826]

Misakian, M., McKnight, R.H., and Fenimore, C., Calibration of AspiratorType Ion Counters and Measurement of

Unipolar Charge Densities, NBS

Technical Note 1223 (May 1986).

The characterization of a parallel-plate

apparatus which can produce a unipolar

ion density that is suitable for calibrating aspirator- type ion counters

operating in the ground plane is

described. The influence of a dc electric field, air motion. Coulomb repulsion, and diffusion on the transport of

ions into the ion counter are examined

to determine their effects on instrument

calibration and measurements in the

vicinity of high voltage dc transmission

lines. An ion density which is known

with an uncertainty of less than ±9% is

used to check the performance of an ion

counter with and without a duct at its

entrance. The results of laboratory

measurements of ion density under a monopolar high voltage line, which com- plement the studies with the parallelplate apparatus, are also described.

[Contact: Martin Misakian, (301)

975-2426]

Siddagangappa, M.C., Van Brunt, R.J. , and Phelps, A.V. , Influence of Oxygen

on the Decomposition Rate of SF

g in

Corona, Proceedings of the 1986 IEEE

International Symposium on Electrical

Insulation, Washington, DC, June 9-12,

1986, pp. 225-229.

The absolute charge rates-of-production

of discharge generated gaseous byproducts S0F

4

, S0F

2

, SC>

2 F

2

, SC>

2

, and CC>

2 have been measured in compressed SFg/° 2 mixtures at a constant pressure. The

normalized total rate of oxyfluorides

plus SC>2 production per SF

& mole does

not increase significantly with the

addition of 0

2 up to 50% in SF^ and

increases slowly for [0

2 ]>50%. The

formation of S02 in all SF

6

/C> 2 mixtures

was insignificant. Instead, the deposition of sulfur (S- ions) on the anode

increased with 0

2 concentration. The

yield of C0

2 from oxidation of carbon on

the electrode was also observed to

increase with 0

2 content. Probable

mechanisms for the formation of SOF

2

, S02 F

2

, SOF. , S“ ions, and CO are discussed. The measured by-product yield

as a function of percent 0

2 is compared

with the calculated maximum rate of SF^

decomposition induced by electron collision in the discharge. The theoretical model used to calculate the rate of

SF^ decomposition in SF^/O^ mixtures is

briefly discussed. As observed for

SF

6 /N2 and SF^/Ne mixtures, the primary

effect of 0

2 on SF& decomposition appears to be retardation of the recombination of SFg dissociation products due

to dilution.

[Contact: Richard J. Van Brunt (301)

975-2425]

Van Brunt, R.J. Water Vapor-Enhanced

Electron-Avalanche Growth in SF for

Nonnnlform Fields, J. Appl. phys.,

Vol. 59, No. 7, pp. 2314-2323 (April 1,

1986) . When water vapor content is increased

from 10 to 100 ppm in SF6 at pressures

from 200 to 300 kPa, a dramatic enhancement occurs in the mean size of electron

avalanches formed near a positive-point

electrode. Although this effect can be

attributed to a change in gas composition, it is not due to a change in the

ionization rate for the gas. It is

proposed that the avalanche enhancement

is due primarily to an increase in the

probability for initiating electron

release from minor negative ions associ-
Page 1

0

CEEE Technical Publication Announcements - June 87

Power Systems Metrology , cont'd.

a ted with water vapor that collisionally

detach more readily at a given field

strength than the predominant negative

ions associated with SF^. The profiles

of the electron avalanche size distributions exhibit a monotonic decrease of

probability with increasing number of

electrons for avalanches with fewer than

10 7

. These peaks are not consistent

with the behavior expected from a stochastic model of electron-avalanche

growth in nonuniform electric fields

which neglects the influence of space

charge,

[Contact: Richard J. Van Brunt, (301)

975-2425]

Pulse Power Metrology

Hebner, R.E., High-Speed Data Systems

for Pulsed Power Applications,

Proceedings of the 5th IEEE Pulsed

Power Conference, Arlington, Virginia,

June 10-12, 1985, pp. 168-171 (May

1986) . Data-acquisition systems for pulsed

power applications generally must

provide nanosecond resolution, operate

in an environment of high levels of

electromagnetic interference, and

acquire significant amounts of data

simultaneously. To meet these demands,

electrical systems have been used and

optical systems are being introduced.

Voluntary standards have been and are

being developed which categorize the

errors in the electrical measurement

systems. Optical systems are in too

early a state of development for similar

s tandardization.

[Contact: Robert E. Hebner, (301)

975-2403]

Superconductors

Ekin, J.W., Moreland, J. , and Brauch,

J. C . , Electromechanical Properties of

Superconductors for DOE Fusion Applications, NBSIR 86-3044 (March 1986).

This is an interim report presenting

data on superconductor performance under

mechanical load, data needed for the

selection of superconductors and the

mechanical design of superconducting

magnets for DOE fusion energy systems.

A further aim of the reported research

is to measure and understand the electromechanical properties of promising

new superconductor materials with strong

application potential at high magnetic

fields. Results include the following.

The first studies of strain vs. critical-current were made on a Chevrel-phase

superconductor, PbMOgSg. Chevrel-phase

superconductors were found to have a large strain effect, comparable in magnitude to that in A- 15 superconductors

like Nb

3 Sn. Electromechanical-property

measurements of an experimental liquidtin-infiltrated Nb

3 Sn conductor showed

it to have an irreversible strain limit

twice as large as that of bronze-process

superconductors and a significantly

higher overall critical-current density;

the liquid-infiltration process thus has

the potential for development of a practical Nb

3 Sn conductor with both superior

critical-current density and extremely

good mechanical properties. Electromechanical parameters were obtained on several Nb

3 Sn conductors that are candidate materials for superconducting

fusion magnets, including conductors

fabricated by the bronze, internal-tin,

and jelly-roll processes. Thermal con- traction data are reported on several

new structural materials for superconductor sheathing and reinforcement, and

a new diagnostic tool for probing the

energy gap of practical superconductors

has been developed using electron tunneling.

[Contact: John W. Ekin, (303)

497-5448]

Goldfarb, R.B., Transient Losses in

Superconductors, NBSIR 86-3053 (June

1 986)

.

Under steady-state conditions, there are

no losses in superconducting wires.

However, when subjected to alternating

or transient magnetic fields or transport currents, losses in type-II super-
CEEE Technical Publication Announcements - June 87 Page 1

1

Superconductors , cont'd.

conductors can become significant. This

report deals with hysteresis losses at 4

K measured by magnetization and complex

magnetic susceptibility. The theoretical and experimental relationships between ac susceptibility and magnetization as functions of dc field were

examined in terms of the critical-state

model as developed by Carr and Clem.

Minor-loop hysteresis loss is shown to

be obtainable by direct measurement of

loop area, from the imaginary component

of ac susceptibility, and from the

reversible susceptibility plus the

critical current density or full-penetration field. Hysteresis and transport

losses measured simultaneously in a Nb-Ti superconducting coil were found to

agree substantially with the predictions

of Minervini's two-dimensional model.

Hysteresis loss measurements in a series

of fine-filament Nb

3 Sn superconductors

showed that the effective filament

diameter is a function of interfilament

separation and local area ratio of

matrix material to Nb. A review of

internal fields in superconductors

showed the importance of demagnetization

factors and internal fields for the

correct analysis of magnetic data. A

theoretical method of calibrating ac susceptometers for cylindrical specimens, which is based on a mutual-inductance calculation, was developed.

[Contact: Ronald B. Goldfarb, (303)

497-3650]

Magnetic Materials and Measurements

Goldfarb, R.B., Rao, K.V. , and Chen,

H . s . , New Magnetic Phase Diagram of

the Amorphous Pd-Fe-Si Ferroglass Alloy

System, Journal of Magnetism and

Magnetic Materials, Vol. 54-57, pp.

1 11-112 (1986) . The magnetic phase diagram of amorphous

Pd

8 o~x Fe xSi £ o was examined. The

peak in the imaginary component of ac susceptibility was used to determine the

ferromagnetic-like/spin-glass transition

temperatures Tfg. It was found that

the Tfg line is highly field dependent and rises with increasing iron

concentration.

[Contact: Ronald B. Goldfarb, (303)

497-3650]

Other Electrical Systems Topics

Hebner, R.E., Stenbakken, G.N. , and

Hillhouse, D.L. , Report of Tests on

Joseph Newman's Device, NBSIR 86-3405

(June 1 986)

.

This report describes electrical measurements performed by the National

Bureau of Standards on Joseph Newman'

s

device. The tests were conducted between March and June 1 986 at the request

of the U.S. Patent and Trademark Office

in accordance with several court orders.

As a Federal science and engineering

research laboratory that specializes in

measurements and is responsible for

maintaining U.S. standards for electricity, NBS has extensive experience

and facilities for measuring the performance of electrical equipment.

The purpose of the measurements was to

test the inventor's claim that the output p>ower from the device was greater

than the power which was supplied to the

device from a battery pack. NBS was not

requested to examine the theory behind

the operation of the device.

The tests consisted of electrical measurements of the power drawn from the

battery pack by the device (input power)

and separate as well as simultaneous

measurements of the output power. These

measurements were done with several

different sets of conventional, welldocumented test instruments. Due to the

specialized nature of the equipment,

however, the instrumentation would not

generally be found in most research

laboratories. The electrical characteristics of the device, especially the

sharp spikes in input and output waveforms, necessitated a variety of extensive and careful measurements and ex- perimental checks to ensure that valid

data resulted. Equipment selection was

critical.
Page 1

2

CEEE Technical Publication Announcements - June 87

Other Electrical Systems Topics , cont'd.

The device's efficiency — defined as the ratio of output power to input power

-- varied depending on the voltage, load

on the device, and the degree of degradation of the tape on the commutator of

the device. If the device simply transferred the power from the batteries to

the load, its efficiency would be 100%;

in no case did the device's efficiency

approach 100%.

At all conditions tested, the input

power exceeded the output power. That

is, the device did not deliver more

energy than it used.

[Contact: Robert E. Hebner, (301)

975-2403]

ELECTROMAGNETIC INTERFERENCE

Radiated Electromagnetic Interference

FitzGerrell, R.G., Linear GainStandard Antennas Below 1000 MHz, NBS

Technical Note 1098 (May 1986).

Gain and antenna parameters related to

input impedance are calculated using a computer program named HVD6 • This program uses well-documented equations to

compute these parameters for gainstandard antennas used in relative-gain

or gain-transfer measurements at frequencies below 1000 MHz. The utility of

this program is that it calculates gain

patterns and input impedances for linear

dipoles above perfect or imperfectly

conducting plane ground and in free

space, and for monopoles on perfectly

conducting plane ground. Examples are

included to illustrate the use of the

program. Uncertainties in the calculated parameters are estimated to be

less than those of the measured parameters.

[Contact: Richard G. FitzGerrell, (303)

497-3737]

FitzGerrell, R.G., Site Attenuation,

IEEE Transactions on Electromagnetic

Compatibility, Vol. EMC-28, No. 1, pp.

38-40 (February 1986). [Note: NBS

Technical Note 1089 (November 1985)

presents similar material and includes

a derivation of the expression for site

attenuation, an appendix describing the

dipole antennas and an analysis of

their mismatch loss and input impedance, and an appendix incorporating

listings of the two FORTRAN 4 codes

used.

]

Site attenuation is a measure of performance of an open test site at frequencies below about 1 GHz. These sites

typically consist of a large obstruction-free ground plane and the hemispheric volume above it. Calculations

of site attenuation are presented which

provide a reference for measurements

made on a 30- by 60-m wire-mesh ground

screen. Measured data are compared to

the calculated results.

[Contact: Richard G. FitzGerrell, (303)

497-3737]

Friday, D.S., and Adams, J.W., A

Statistical Characterization of

Electroexplosive Devices Relevant to

Electromagnetic Compatibility Assessment, NBS Technical Note 1094 (May

1 986) . Electroexplosive devices (EEDs) are

electrically fired explosive initiators

used in a wide variety of applications.

The nature of most of these applications

requires that the devices function with

near certainty when required and remain

inactive otherwise. Recent concern with

pulsed electromagnetic interference and

nuclear electromagnetic pulse made apparent the lack of methodology for as- sessing EED vulnerability. A new and

vigorous approach for characterizing EED

firing levels is developed in the con- text of statistical linear models and is

demonstrated in this paper. We combine

statistical theory and methodology with

thermodynamic modeling to determine the

probability that an EED, of a particular

type, fires when excited by a pulse of a given width and amplitude. The results

can be applied to any type of EED for

which the hot-wire explosive binder does

not melt below the firing temperature.
CEEE Technical Publication Announcements - June 87 Page 1

3

Radiated EMI , cont'd.

Included are methods for assessing model

validity and for obtaining probability

plots, called "Firing Likelihood Plots".

A method of measuring the thermal time

constant of an EED is given. This

parameter is necessary to evaluate the

effect of a train of pulses. These

statistical methods are both more general and more efficient than previous

methods for EED assessment. The results

provide information which is crucial for

evaluating the effects of currents

induced by impulsive electromagnetic

fields of short duration relative to the

thermal time constant of the EEDs

.

[Contact: Dennis S. Friday, (303)

497-5395]

Hill, D.A., A Numerical Method for

Near-Field Array Synthesis, IEEE

Transactions on Electromagnetic

Compatibility, Vol. EMC-27, No. 4, pp.

201-211 (November 1985).

A numerical method for near-field array

synthesis is developed for arbitrary

array geometries. The intended

application is for generating a planar

field in a test volume for

electromagnetic susceptibility testing,

but the method is valid for arbitrary

field distributions. A uniqueness

theorem is utilized to allow the field

conditions to be enforced on the surface

of the test volume rather than

throughout the volume. The synthesis

method is a least-squares solution with

a constraint on the source norm; the

constraint keeps the field small outside

the test volume. Numerical results are

shown for the case of synthesizing a plane wave in the near field of an array

of line sources.

[Contact: David A. Hill, (303)

497-3472]

Jesch, R.L., Susceptibility of

Emergency Vehicle Sirens to External

Radiated Electromagnetic Fields,

National Institute of Justice

Report-200-85 (May 1986).

Jesch, R.L., Susceptibility of

Emergency Vehicle Sirens to External

Radiated Electromagnetic Fields,

National Institute of Justice

Report-200-85 (May 1986).

This report provides the results of an

exploratory study to determine the

susceptibility of electronic sirens to

interference from typical communications

equipment such as the transmitters and

antennas likely to be operated in and

around a law-enforcement vehicle.

Tests were performed using five specimen

sirens and communications equipment

operating at frequencies representing

the frequency bands of 25 to 50, 150 to

174, 400 to 512, and 806 to 866 MHz.

The sirens were mounted on top of a vehicle equipped with transmitters and

roof-mounted antennas and subjected to

levels of field strength generated by

mobile transmitting equipment having

output power levels up to 100 W. In

addition, the siren controllers were

subjected to various levels of field

strength inside either a transverse

electromagnetic (TEM) cell or an

anechoic chamber to determine their

susceptibility to known electromagnetic

fields.

[Contact: Ramon L. Jesch, (303)

497-3496]

ADDITIONAL INFORMATION

Lists of Publications

Gibson, K.A., Page, J. M., and Miller,

C.K.S., A Bibliography of the NBS

Electromagnetic Fields Division Publications, NBS IR 85-3040 (February

1986) . This bibliography lists publications of

the National Bureau of Standards' Electromagnetic Fields Division for the

period from January 1984 through September 1985, with selected earlier publications from the Division's predecessor

organizations

[Contact: Kathryn A. Gibson, (303)

497-3132]
Page 1

4

CEEE Technical Publication Announcements - June 87

Lists of Publications , cont'd.

Kline, K.E., and DeWeese, M.E. , Metrology for Electromagnetic Technology:

A Bibliography of NBS Publications,

NBSIR 86-3048 (June 1986).

This bibliography lists the publications

of the personnel of the Electromagnetic

Technology Division of NBS in the period

from January 1970 through December 1985.

A few earlier references that are directly related to the present work of

the Division are included.

[Contact: Kathryn E. Kline, (303)

497-3678]

Palla, J. C., and Meiselman, B., Electrical and Electronic Metrology: A

Bibliography of NBS Electrosystems

Division Publications, NBS List of

Publications 94 (January 1987).

This bibliography covers publications of

the Electrosystems Division, Center for

Electronics and Electrical Engineering,

NBS, and of its predecessor sections for

the period January 1963 to January 1987.

A brief description of the Division's

technical program is given in the introduction.

[Contact: Jenny C. Palla, (301)

975-2220]

Walters, E.J. , Semiconductor Measurement Technology: A Bibliography of NBS

Publications for the Years 1962-1986,

NBSIR 87-3522 (February 1987).

This bibliography contains reports of

work performed at the National Bureau of

Standards in the field of Semiconductor

Measurement Technology in the period

from 1962 through December 1986. An

index by topic area and a list of

authors are provided.

[Contact: E. Jane Walters, (301)

975-2050]

1987 CEEE CALENDAR

July 28-30 (Vail, CO)

Short Course on Optical Fiber Measurements. This course is sponsored by

the National Bureau of Standards and the

University of Colorado with the cooperation of members of industry who serve as faculty together with staff from the

Electromagnetic Technology and Electromagnetic fields Divisions. The course

is intended for scientists and engineers

involved in optical fiber characterization and emphasizes concepts, techniques, and apparatus used in measuring

engineering parameters of telecommunications-grade fibers.

The following major topic areas are addressed: optics for communications, em- phasizing geometric optics concepts;

fiber properties and parameters; indexprofile measurements; fiber bandwidth

measurements in the frequency and time

domains; fiber attenuation measurements;

connector and splice losses; optical

time-domain reflectometry concepts and

applications; single-mode fibers; statistics and error analyses, measurement

uncertainties; and fibers for sensors.

[Contact: Office of Conference

Services, University of Colorado (303)

492-8630; Robert L. Gallawa (303)

497-3761; or Matt Young (303) 497-3223]

September 14-16 (Research Triangle Park,

NC)

VLSI and GaAs Packaging Workshop.

This Workshop is co-sponsored by the

Components, Hybrids, and Manufacturing

Technology Society of IEEE and NBS;

attendees are expected to be knowledgeable in the field and to participate in

discussions. Topic areas include: VLSI

and wafer scale package design (characterization and implementation, cost and

performance driven solutions); package

thermal design (characteristics, results, and issues); package interconnection options (wire bonding, TAB, flip

nection options (wire bonding, TAB, flip

chip, or optical) ; GaAs IC packaging

(high speed packaging considerations);

package electrical issues (reduction of

parasitics and improvements in electrical performances); integrating package

design (from die to system, including
CEEE Technical Publication Announcements - June 87 Page 1

5

1987 CEEE Calendar , cont'd.

assembly and test issues) ; VLSI package

materials advancements; die-attach solutions for large chips; new failure

mechanisms in VLSI packaging. [Contact:

George G. Harman, (301) 975-2097]

September 22-25 (Boulder, CO)

Noise Measurement Seminar. This fourday course is presented and hosted by

the Electromagnetic Fields Division in

cooperation with representatives from

industry and the NBS Time and Frequency

Division. It is intended for practicing

noise metrologists and technical managers responsible for systems in which

accurate measurements of thermal and

phase noise are important. Attendees

will learn the most important precautions to take in making accurate noise

measurements and will receive a set of

notes that are suitable for use in solving precision noise measurement problems. Course topics include reference

tnermal noise sources; thermal noise

measuring systems and techniques; phase

noise; and the problems of measuring

thermal noise in passive components,

amplifiers, and communication systems.

The course design combines formal lectures on theory presented by NBS staff

and industry experts with demonstrations

in NBS laboratories and demonstrations

of commercial equipment. A special

feature of the Seminar is the opportunity each day for attendees to share

their experiences in solving specific

problems or their insights on practical

noise measurement issues through short

presentations to the assembled group.

Time is scheduled for group discussions

of these presentations and other topics

raised by the Seminar. [Contact:

Sunchana Perera (303) 497- 3546]

September 23-25 (Gaithersburg, MD

)

Workshop on the Role of Optics in Power

System Electrical Measurements. This

Workshop is sponsored by NBS, the

Bonneville Power Administration (BPA),

the Electric Power Research Institute

( EPRI ) , and the Empire State Electric

Energy Research Corporation (ESEERC) and

is intended for research and development

engineers in utilities and in companies

that supply equipment to the utility

industry. The objective of this workshop is to identify anticipated opportunities for improved measurement techniques that should arise as power systems individually and collectively

evolve to meet the needs of the 1990s.

Presentations will stress the design and

testing of optical systems for 60-Hz

voltage or current measurement; the

interfacing of electronic or optical

components with existing metering and

control systems; opportunities for new measurement hardware resulting from

increased automated control of power

systems and of the testing of power

system components; and optical techniques for the measurement of electric

and magnetic fields in power systems or system components. The results of an NBS study evaluating optical techniques

for power-system electrical measurements

and carried out in agreement with BPA,

EPRI, and ESEERC will be presented as an

invited keynote. [Contact: Robert E.

Hebner, (301) 975-2403]

October 26-28 (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers (Nineteenth Boulder

Damage Symposium). This Symposium is

cosponsored by the National Bureau of

Standards, the American Society for

Testing and Materials, the Air Force

Office of Scientific Research, the Office of Naval Research, and the Defense

Advanced Research Projects Agency and

constitutes a principal forum for the

exchange of information on the physics

and technology of materials for highpower lasers.

Topics to be discussed include new materials, bulk damage phenomena, surface

and thin-film damage, design considerations for high-power systems, and fundamental mechanisms of laser-induced
Page 1

6

CEEE Technical Publication Announcements - June 87

1987 CEEE Calendar , cont'd.

damage. Proceedings of the Symposium

will be published (Note: Ihe collection

of Symposium proceedings contains information on optics for all aspects of

high-power/high-energy lasers, including

environmental degradation, durability,

fabrication, material growth and deposition processes, and testing). [Contact:

Susie A. Rivera (303) 497-5342]

December 10-11 (Gaithersburg, MD)

Power Semiconductor Devices Workshop.

This Workshop, sponsored jointly by IEEE

and NBS , is intended to bring together

for interactive participation those

actively working in the field of power

semiconductor devices. It will be held

in conjunction with the 1987 IEEE International Electron Devices Meeting in

Washington, DC. Four specific topic

areas have been selected, based on the

response to a questionnaire sent to over

200 power device researchers worldwide.

They are: power and high voltage

integrated circuits, discrete devices,

device modeling, and packaging. Attendees are expected to be prepared to

contribute to the development of re- sponses to specific questions that

arise in the context of the particular

topic areas; a final schedule identifying the topic areas should be available at the end of October. [Contact:

David L. Blackburn, (301) 975-2053]

CEEE SPONSORS

National Bureau of Standards

Department of Defense

Defense Advanced Research Project

Agency; Defense Nuclear Agency;

National Security Agency; Combined

Army/Navy/Air Force Calibration

Coordination Group

U.S. Air Force

Bolling Air Force Base; Hanscom Air

Force Base; Newark Air Force

Station; Rome Air Development

Center; Space Division; Space & Missile Organization; Research

Projects Office; Wright-Patterson Air

Force Base

U. S . Army

Aberdeen Proving Ground; Aviation

Research and Development Command;

Fort Belvoir; Fort Monmouth; Harry

Diamond Laboratories; Materials & Mechanics Research; Redstone Arsenal

U.S. Navy

Aviation Logistics Center (Patuxent

River) ; Metrology Energy Center/Seal

Beach; Naval Air Test Center; Naval

Ocean Systems Center; Naval Research

Laboratory; Naval Sea Systems

Command; Naval Surface Weapons

Center; Naval Weapons Support Center

(Crane); Office of Naval Research

Department of Commerce

NOAA

Department of Energy

Bonneville Power Administration;

Energy Systems Research; Fusion

Energy; High Energy & Nuclear

Physics

Department of Justice

Law Enforcement Assistance

Administration

Department of Transportation

National Highway Traffic Safety

Department of Treasury

Bureau of Engraving & Printing

The Charles Stark Draper Laboratory

Food and Drug Administration

Hughes Aircraft Company

International Copper Research

Association

International Telecommunications

Satellite Organization

Environmental Protection Agency

Office of Radiation Programs

National Aeronautics and Space

Administration

Lyndon B. Johnson Space Center

Sandia National Laboratories

University of California Los Alamos

Scientific Laboratory

Other — Associated Univ. , Inc.
NBS-114A (REV. 2«8C

)

U.S. DEPT. OF COMM.

BIBLIOGRAPHIC DATA

SHEET (See instructions)

4. TITLE AND SUBTITLE

PUBLICATION OR

REPORT NO.

NBSIR 87-3578

2. Performing Organ. Report No. 3. Publication Date

June 1987

Center for Electronics and Electrical Engineering Technical Publication Announcements

Covering Center Programs, April-June 1986 with 1987 CEEE Events Calendar

5. AUTHOR(S)

E. Jane Walters, compiler

6. PERFORMING ORGANIZATION (If joint or other than N BS. see instructions) 7. Contract/Grant No. NATIONAL BUREAU OF STANDARDS

U.S. DEPARTMENT OF COMMERCE 8. Type of Report & Period Covered

GAITHERSBURG, MD 20899

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS ( Street. City. State. ZIP)

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

10. SUPPLEMENTARY NOTES

All technical information included in this document has been previously approved for

publication.

| | Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bibliography or literature survey, mention it here)

This is the ninth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. This issue of the Center for Electronics and Electrical

Engineering Technical Publication Announcements covers the second quarter of

calendar year 1986. Abstracts are provided by technical area for papers published

this quarter.

12. KEY WORDS (Six to twelve entries^ alphabetical order; capitalize only proper names; and separate key words by semicolons)

antennas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers; semiconductors; superconductors

13. AVAILABILITY 14. NO. OF

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XX Unlimited

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KEY CONTACTS; Center Headquarters (720) Director, Mr. Judton C. French (301) 075-2220

' Deputy Director, Mr. Robert I. Scace (301) 075-2220

Electrosystems Division (722) Chief, Dr. Otkart Petersons (301) 075-2400

Electromagnetic Fields Division (723) Chief, Dr. Ramon C. Baird (303) 407-3131

Electromagnetic Technology Division (724) Chief, Dr. Robert A. Kamper (303) 407-3535

Semiconductor Electronics Division (727) Chief, Mr. Frank F. Oettlnger (301) 075-2054

INFORMATION;

For additional Information on the Center for Electronics and Electrical Engineering, write or call:

Center for Electronics and Electrical Engineering

National Bureau of Standards

Metrology Building, Room B-358

Gaithersburg, MD 20890

Telephone (301) 975-2220