# Patent

## Title
MOS composite static induction thyristor

## Abstract

In a light emitting device comprising a first clad layer composed of a mixed crystal compound semiconductor of first type conductivity, an active layer composed of a mixed crystal compound semiconductor of first type conductivity which has the mixed crystal ratio required to emit the prescribed wavelength, and a second clad layer composed of a mixed crystal compound semiconductor of second type conductivity which has a mixed crystal ratio equivalent to that of the first clad layer, the active layer is sandwiched by the first and second clad layers and forms the double hetero structure with the first and second clad layers, and the carrier concentration in the first clad layer near the junction with the active layer was made to be 5.times.10.sup.16 cm.sup.-3 or less. The carrier concentration in the active layer is preferably 1.times.10.sup.17 cm.sup.-3 or less, and the carrier concentration in the second clad layer is preferably 5.times.10.sup.16 cm.sup.-3 or more.

## Background
This invention relates to light emitting devices, and in particular to light emitting devices with a double hetero structure.

A light emitting device is a semiconductor device which emits visible or infrared light when a forward direction current is applied to its pn junction. It is used as a point light source for a pilot lamp and such, and also as a light source in optical communications, and its applications are increasing.

In general, a light emitting device has a three-layer double hetero structure in which an active layer is sandwiched by a set of clad layers, and electrodes are formed on both sides of this double hetero structure to obtain a light emitting device. Each of the three layers is composed of a semiconductor, for which mainly the III-V group compound semiconductors are currently used commercially. Of these, the GaAlAs semiconductors are used for light emitting devices for high luminance applications because they provide higher luminance.

The light emitting devices described above are made, for example, by growing a three-layer double hetero structure on a GaAs substrate using the epitaxial growth method. Either the gas phase growth method or the liquid phase growth method may be employed. However, the liquid phase growth method is mostly used because it provides growth layers with better crystallinity.

As the applications for light emitting devices broaden, light emitting devices with higher luminance are increasingly desired. However, the conventional light emitting devices described above cannot provide enough luminance, and development of light emitting devices with higher luminance has been desired.

Accordingly, it is an object of this invention to provide light emitting devices with higher luminance than conventional light emitting devices.

According to this invention, a light emitting device comprises three layers which are: of first type conductivity; first type conductivity which has the mixed crystal ratio required to emit light having the prescribed wavelength; and of second type conductivity which has a mixed crystal ratio equivalent to that of the first clad layer; and forms the double hetero structure with the first and second clad layers; and layer near the junction with the active layer being 5.times.10.sup.16 cm.sup.-3 or less.

The carrier concentration of the active layer is preferably 1.times.10.sup.17 cm.sup.-3 or less, and the carrier concentration in the second clad layer near the junction with the active layer is preferably 5.times.10.sup.16 cm.sup.-3 or more. Also, the lower limits of the carrier concentration in the first clad layer near the junction with the active layer and the concentration of the active layer are set such that the first type conductivity is maintained. The upper limit of the carrier concentration of the second clad layer is set such that the added impurity does not deteriorate the crystallinity. As the impurity for the active layer and the first clad layer, Zn or C, for example, is chosen. There may be carried out a plural doping in which more than two impurities are doped thereto. As the impurity for the second clad layer, Te or Sn, for example, is chosen. There may be also carried out the plural doping.

The first and second clad layers may be composed of a mixed crystal type compound semiconductor represented as Ga.sub.1-x Al.sub.x As (where 0<x<1). The active layer may be composed of a mixed crystal type compound semiconductor represented as Ga.sub.1-y Al.sub.y As (where 0<y<1). Here, x is preferably between 0.6 and 0.85 and y is preferably between 0.3 and 0.45.

In this invention, the luminance of the light emitting device is improved by making the carrier concentration in the first clad layer near the active layer 5.times.10.sup.16 cm.sup.-3 or less. In the past, the carrier concentration in this clad layer was usually 5.times.10.sup.16 cm.sup.-3 or more. However, as described above, the inventors of the invention have confirmed that the luminance of a light emitting device increases under conditions in which the carrier concentration near the active layer is 5.times.10.sup.16 cm.sup.-3 or less. It is thought that the reason for this is that lowering the added impurity concentration near the active layer has greater positive effects from reduced crystal defects than negative effects from a reduction of the carriers and such, resulting in the increase in luminance.

This invention will be explained in more detail in conjunction with appended drawings, wherein:

FIG. 1 is an explanatory view showing the depth-wise structure of the light emitting device in a preferred embodiment according to the invention;

FIGS. 2(a)-2(e) are explanatory views showing an example of methods of fabricating the light emitting device in the preferred embodiment according to the invention;

FIG. 3 is a graph showing the depth-wise carrier concentration profile of the light emitting device in the preferred embodiment according to the invention;

FIG. 4 is a graph showing the relationship between the carrier concentration in the p-type clad layer near the active layer and the relative luminance of the light emitting device; and

FIG. 5 is a graph showing the frequency distribution by relative luminance for the concentration range in the preferred embodiment according to the invention (1 to 2.times.10.sup.16 cm.sup.-3) and the distribution for the conventional concentration range (1 to 2.times.10.sup.17 cm.sup.-3).

An embodiment of this invention is described below by referring to the attached drawings.

FIG. 1 is a cross-sectional view showing the depth-wise structure of an embodiment of the light emitting device of this invention. In this figure, the three layers of the epitaxial growth layers composing the light emitting device of this invention are formed on the p-type GaAs <100> substrate 10 with the added Zn concentration of approximately 1 to 3.times.10.sup.19 cm.sup.-3 as the impurity. The p-type clad layer 11 of 150 .mu.m thickness composed of Ga.sub.0.25 Al.sub.0.75 As mixed crystal compound semiconductor doped with Zn as the impurity to have the prescribed depth-wise profile, the p-type active layer 12 of 1 .mu.m thickness composed of Ga.sub.0.62 Al.sub.0.38 As mixed crystal compound semiconductor doped with Zn as the impurity to have the prescribed concentration, and the p-type clad layer 13 of 50 .mu.m thickness composed of Ga.sub.0.25 Al.sub.0.75 As mixed crystal compound semiconductor doped with Te as the impurity are consecutively formed on the p-type GaAs substrate 10 by the epitaxial growth method. The p-type GaAs substrate 10 will be removed by selective etching after the formation of the epitaxial growth layer described above.

Now we will describe an example of the manufacturing methods of the light emitting device of this embodiment by referring to FIG. 2. The light emitting device of this embodiment may be manufactured by growing each layer using the liquid phase growth method. Here, an example of the slide-boat method using a slide-boat is shown. Also shown is the gradual cooling method in which the growing is conducted by lowering the temperature gradually.

In FIG. 2, the p-type GaAs substrate 10 is secured on a boat body 20 in such way that its top surface is flush with the top surface of the boat body 20. The first solution reservoir 22 which contains the p-type clad layer growth solution 22a, the second solution reservoir 23 which contains the p-type active layer growth solution 23a, and the third solution reservoir 24 which contains the n-type clad layer growth solution 24a are set up on the sliding solution reservoir 21. Each solution reservoir does not have a bottom, so that each solution directly soaks the top surface of the boat body 20. The p-type and n-type clad layer growth solutions 22a and 24a are melted Ga.sub.0.25 Al.sub.0.75 As liquid with Zn added as the p-type impurity and Te added as the n-type impurity, respectively. The p-type active layer growth solution 23a is melted Ga.sub.0.62 Al.sub.0.38 As liquid with Zn added as the p-type impurity. The sliding solution reservoir 21 is moved by a handling rod 25.

Now, we describe the process using the equipment described above to form the three epitaxial growth layers on the p-type GaAs substrate 10. First, using the handling rod 25, the sliding solution reservoir 21 is slid, in the direction of the arrow, from the position indicated in FIG. 2(a) to set the p-type clad layer growth solution 22a in the first reservoir 22 on the p-type GaAs substrate 10, and the p-type clad layer 11 is grown under the conditions where, for example, the temperature is lowered from 900.degree. C. to 800.degree. C. (FIG. 2(b)). Then, the sliding solution reservoir 21 is slid further in the direction of the arrow to set the p-type active layer growth solution 23a in the second reservoir 23 on the p-type GaAs substrate 10, and the p-type active layer is grown under the conditions where, for example, the temperature is lowered from 800.degree. C. to 795.degree. C. (FIG. 2(c)). The sliding solution reservoir 21 is then slid further in the direction of the arrow to grow the n-type clad layer 13 under the conditions where, for example, the temperature is lowered from 795.degree. C. to 650.degree. C. (FIG. 2(d)). After this, the sliding solution reservoir 21 is slid further in the direction of the arrow to complete the growth process (FIG. 2(e)).

In order to keep the carrier concentration in the p-type clad layer 11 near the active layer at 5.times.10.sup.16 cm.sup.-3 or less, the amount of the p-type impurity Zn added to the p-type clad layer growth solution 22a is very small, or Zn is not added at all. However, in the subsequent thermal process, the highly concentrated Zn added to the p-type GaAs substrate 10 diffuses into the clad layer, causing so-called "auto doping". As a result, the clad layer becomes the p-type clad layer 11 with the prescribed concentration profile, and an area with low carrier concentration (1.times.10.sup.16 cm.sup.-3) is formed near the p-type active layer 12.

After forming the three layer double hetero structure on the p-type GaAs substrate 10, as described above, the substrate is removed by etching and electrodes are formed on both sides of the three layer structure to obtain the light emitting device.

FIG. 3 shows a depth-wise carrier concentration profile of the light emitting device of this embodiment which was made as described above. The carrier concentration in the p-type clad layer 11 near the p-type GaAs substrate 10 is approximately equivalent to the carrier concentration in the substrate (1 to 3.times.10.sup.19 cm.sup.-3). However, the closer to the p-type active layer 12, the lower the carrier concentration, and it is as low as 1.times.10.sup.16 cm.sup.-3 near the junction with the p-type active layer. On the other hand, the carrier concentration in the p-type active layer is 1.times.10.sup.17 cm.sup.-3. The carrier concentration in the n-clad layer 13 increases from 1.times.10.sup.17 cm.sup.-3, which is equivalent to the carrier concentration in the p-type active layer, to approximately 6.times.10.sup.17 cm.sup.-3 in the top region.

FIG. 4 shows the relationship between the carrier concentration in the p-type clad layer 11 near the p-type active layer 12 and the relative luminance of the light emitting device. It is shown that as the carrier concentration in the p-type clad layer 11 near the p-type active layer 12 decreases, the relative luminance of the light emitting device increases. FIG. 5 shows the frequency distribution by relative luminance for the concentration range in the embodiment of this invention (1 to 2.times.10.sup.16 cm.sup.-3) and the distribution for the conventional concentration range (1 to 2.times.10.sup.17 cm.sup.-3). It is shown that the relative luminance for the concentration range in this embodiment (1 to 2.times.10.sup.16 cm.sup.-3) is very high, approximately 400.

As described above, in a light emitting device comprising three layers, i.e., (a) a first clad layer composed of a mixed crystal compound semiconductor of first type conductivity, (b) an active layer composed of a mixed crystal compound semiconductor of first type conductivity which has the mixed crystal ratio required to emit the prescribed wavelength, and (c) a second clad layer composed of a mixed crystal compound semiconductor of second type conductivity which has a mixed crystal ratio equivalent to that of the first clad layer, wherein the active layer is sandwiched by the first and second clad layers and forms the double hetero structure with the first and second clad layers, it is possible to obtain higher luminance than that of conventional light emitting devices by keeping the carrier concentration in the first clad layer near the junction with the active layer at 5.times.10.sup.16 cm.sup.-3 or less.

Although the invention has been described with respect to specific embodiment for complete and clear disclosure, the appended claims are not to be thus limited but are to be construed as embodying all modification and alternative constructions that may occur to one skilled in the art which fairly fall within the basic teaching herein set forth.

## Claims

1. A light emitting device, comprising: first type conductivity; first type conductivity which has a mixed crystal ratio required to emit the prescribed wavelength; and second type conductivity which has a mixed crystal ratio equivalent to that of said first clad layer; layers and forms a double heterostructure with said first and second clad layers; and said active layer is substantially less than 5.times.10.sup.16 cm.sup.-3.

2. A light emitting device in accordance with claim 1, wherein: or less.

3. A light emitting device in accordance with claim 1, wherein: said active layer is 5.times.10.sup.16 cm.sup.-3 or more.

4. A light emitting device in accordance with claim 1, wherein: or less; and said active layer is 5.times.10.sup.16 cm.sup.-3 or more.

5. A light emitting device in accordance with claim 1, wherein: impurity selected from zinc (Zn) and carbon (C).

6. A light emitting device in accordance with claim 1, wherein: or less; and impurity selected from zinc (Zn) and carbon (C).

7. A light emitting device in accordance with claim 1, wherein: said active layer is 5.times.10.sup.16 cm.sup.-3 or more; and impurity selected from zinc (Zn) and carbon (C).

8. A light emitting device in accordance with claim 1, wherein: or less; said active layer is 5.times.10.sup.16 cm.sup.-3 or more; and impurity selected from zinc (Zn) and carbon (C).

9. A light emitting device comprising: represented as Ga.sub.1-x Al.sub.x As (where 0<x<1) of first type conductivity; represented as Ga.sub.1-y Al.sub.y As (where 0<y<1) of first type of conductivity; and second type conductivity which has a mixed crystal ration equivalent to that of said clad layer; layers and forms a double heterostructure with said first and second clad layers; and said active layer is substantially less than 5.times.10.sup.16 cm.sup.-3.

10. A light emitting device in accordance with claim 9, wherein: or less.

11. A light emitting device in accordance with claim 9, wherein: said active layer is 5.times.10.sup.16 cm.sup.-3 or more.

12. A light emitting device in accordance with claim 9, wherein: or less; and said active layer is 5.times.10.sup.16 cm.sup.-3 or more.

13. A light emitting device in accordance with claim 9, wherein: impurity selected from zinc (Zn) and carbon (C).

14. A light emitting device in accordance with claim 9, wherein: or less; and impurity selected from zinc (Zn) and carbon (C).

15. A light emitting device in accordance with claim 9, wherein: said active layer is 5.times.10.sup.16 cm.sup.-3 or more; and impurity selected from zinc (Zn) and carbon (C).

16. A light emitting device in accordance with claim 9, wherein: or less; said active layer is 5.times.10.sup.16 cm.sup.-3 or more; and impurity selected from zinc (Zn) and carbon (C).

17. A light emitting device, according to claim 9:

18. A light emitting device, according to claim 10:

19. A light emitting device, according to claim 11:

20. A light emitting device, according to claim 12:

21. A light emitting device, according to claim 13:

22. A light emitting device, according to claim 14:

23. A light emitting device, according to claim 15:

24. A light emitting device, according to claim 16:

25. A light emitting device, according to claim 9:

26. A light emitting device, according to claim 10:

27. A light emitting device, according to claim 11:

28. A light emitting device, according to claim 12:

29. A light emitting device, according to claim 13:

30. A light emitting device, according to claim 14:

31. A light emitting device, according to claim 15:

32. A light emitting device, according to claim 16:

33. A light emitting device having a carrier concentration in a first clad layer near a junction with an active layer which is substantially less than 5.times.10.sup.16 cm.sup.-3, made by a process comprising the steps of: solution on a p-type gallium arsenide (GaAs) substrate; 900.degree. C. to 800.degree. C.; solution over said p-type gallium arsenide (GaAs) substrate; 800.degree. C. to 795.degree. C.; solution over said p-type gallium arsenide (GaAs) substrate; and 795.degree. C. to 650.degree. C.

34. A light emitting device in accordance with claim 33, wherein said process further comprises the step of sliding said third solution reservoir away from said n-type clad layer.

35. A light emitting device made by a process in accordance with claim 34, further comprising the step of selectively etching off of said p-type gallium arsenide (GaAs) substrate after epitaxial growth.

36. A light emitting device made by a process comprising the steps of: layer which is doped with an impurity; as an impurity source to said first clad semiconductor layer to have a predetermined carrier concentration profile, wherein a active layer is substantially less than 5.times.10.sup.16 cm.sup.-3.

37. A light emitting device in accordance with claim 36, wherein said first semiconductor layer is an epitaxial layer grown by epitaxy.

38. A light emitting device in accordance with claim 36, wherein each of said first clad second semiconductor layer and semiconductor substrate layer consists of a semiconductor included by the III-V periodical group.

39. A light emitting device in accordance with claim 36, wherein said first clad semiconductor layer is an epitaxial layer grown by epitaxy; and substrate consist of a semiconductor included by the III-V periodical group.

40. A light emitting device in accordance with claim 36, wherein said semiconductor substrate consists of GaAs and said first clad semiconductor layer consists of GaAlAs.

41. A light emitting device in accordance with claim 36, wherein said semiconductor substrate layer is doped with Zn.

42. A light emitting device in accordance with claim 36, wherein said first clad semiconductor layer is an epitaxial layer grown by epitaxy; and

43. A light emitting device in accordance with claim 36, wherein each of said semiconductor substrate layer and first clad semiconductor layer consists of a semiconductor included by the III-V periodical group; and

44. A light emitting device in accordance with claim 36, wherein said semiconductor substrate layer consists of GaAs and said first clad semiconductor layer consists of GaAlAs; and

45. A light emitting device in accordance with claim 36, wherein said first clad semiconductor layer is an epitaxial layer grown by epitaxy; consist of a semiconductor included by the III-V periodical group; and

46. A light emitting device in accordance with claim 36, wherein said first clad semiconductor layer is an epitaxial layer grown by epitaxy; semiconductor layer consists of GaAlAs; and

47. A light emitting device in accordance with claim 36, wherein said semiconductor substrate layer has a carrier concentration equal to or higher than 5.times.10.sup.17 atoms cm.sup.-3.

48. A light emitting device in accordance with claim 36, wherein said semiconductor substrate layer is doped with Zn; and higher than 5.times.10.sup.17 atoms cm.sup.-3.

49. A light emitting device in accordance with claim 36, wherein said step (b) of diffusing said impurity from said semiconductor substrate layer is carried out using heat generated in a step of forming said first clad semiconductor layer and/or other layers.

50. A light emitting device in accordance with claim 36, wherein a surface of said first clad semiconductor layer has a carrier concentration equal to or lower than 5.times.10.sup.16 atoms cm.sup.-3.

51. A light emitting device, comprising: first type conductivity; first type conductivity which has the mixed crystal ratio required to emit the prescribed wavelength; and second type conductivity which has a mixed crystal ratio equivalent to that of said first clad layer; layers and forms a double heterostructure with said first and second clad layers; said active layer is substantially less than 5.times.10.sup.16 cm.sup.-3 ; and comprising zinc (Zn) and carbon.

52. A light emitting device in accordance with claim 51, wherein a carrier concentration in said active layer is 1.times.10.sup.17 cm.sup.-3 or less.

53. A light emitting device in accordance with claim 51, wherein a carrier concentration in said second clad layer near the junction with said active layer is 5.times.10.sup.16 cm.sup.-3 or more.

54. A light emitting device in accordance with claim 51, wherein carrier concentration in said active layer is 1.times.10.sup.17 cm.sup.-3 or less; and said active layer is 5.times.10.sup.16 cm.sup.-3 or more.

55. A light emitting device comprising: represented as Ga.sub.1-x Al.sub.x As (where 0<x<1) of a first type conductivity; represented as Ga.sub.1-y Al.sub.y As (where 0<y<1) of said first type of conductivity; second type conductivity which has a mixed crystal ration equivalent to that of said clad layer; layers and forms a double heterostructure with said first and second clad layers; said active layer is substantially less than 5.times.10.sup.16 cm.sup.-3 ; and zinc (Zn) and carbon.

56. A light emitting device in accordance with claim 55, wherein a carrier concentration of said active layer is 1.times.10.sup.17 cm.sup.-3 or less.

57. A light emitting device in accordance with claim 55, wherein a carrier concentration of said second layer near the junction with said active layer is 5.times.10.sup.16 cm.sup.-3 or more.

58. A light emitting device in accordance with claim 55, wherein: or less; and said active layer is 5.times.10.sup.16 cm.sup.-3 or more.

59. A light emitting device in accordance with claim 55, wherein said x is between 0.6 and 0.85, and said y is between 0.3 and 0.45.

60. A light emitting device in accordance with claim 56, wherein said x is between 0.6 and 0.85, and said y is between 0.3 and 0.45.

61. A light emitting device in accordance with claim 57, wherein said x is between 0.6 and 0.85, and said y is between 0.3 and 0.45.

62. A light emitting device in accordance with claim 58, wherein said x is between 0.6 and 0.85, and said y is between 0.3 and 0.45.

63. A light emitting device in accordance with claim 55, wherein an impurity added to said second clad layer is Te.

64. A light emitting device in accordance with claim 56, wherein an impurity added to said second clad layer is Te.

65. A light emitting device in accordance with claim 57, wherein an impurity added to said second clad layer is Te.

66. A light emitting device in accordance with claim 58, wherein an impurity added to said second clad layer is Te.