Threshold Analysis Summary 

Total Number of Semiconductor Facilities 175 

Comments: Semiconductor facilities include both full-scale and pilot/R&D facilities.

Semiconductor Emission Threshold Summary: 

Emission Threshold (Mt CO2 Eq) 1,000 10,000 25,000 100,000 

Number of Facilities below 41 67 84 120 

Percent of Facilities below 23.4% 38.3% 48.0% 68.6% 

Total Emissions of Facilities below 20,187 98,467 249,610 1,004,054 

Percent of Emissions below 0.4% 1.7% 4.3% 17.5% 

Number of Facilities above 134 108 91 55 

Percent of Facilities above 76.6% 61.7% 52.0% 31.4% 

Total Emissions of Facilities above 5,721,490 5,643,209 5,492,066 4,737,622 

Percent of Emissions above 99.6% 98.3% 95.7% 82.5% 

Total Number of MEMs Facilities 12 

Comments: MEMs facilities are obtained from World Fab Watch 2007 database. However, this database does not appear to contain a 

complete list of MEMs fabrication facilities in the US. 

MEMs Emission Threshold Summary: 

Emission Threshold (Mt CO2 Eq) 1,000 10,000 25,000 100,000 

Number of Facilities below 2 8 10 12 

Percent of Facilities below 16.7% 66.7% 83.3% 100.0% 

Total Emissions of Facilities below 801 25,377 49,952 146,115 

Percent of Emissions below 0.5% 17.4% 34.2% 100.0% 

Number of Facilities above 10 4 2 0 

Percent of Facilities above 83.3% 33.3% 16.7% 0.0% 

Total Emissions of Facilities above 145,314 120,739 96,164 0 

Percent of Emissions above 99.5% 82.6% 65.8% 0.0% 

Total Number of LCDs Facilities 9 

Comments: LCD facilities that are assumed to use PFCs include LCOS, a-Si LCDs, OLEDs (assuming active matrix), HTPS, TFT, Single 

Crystal AMLCD, LTPS.

LCDs Emission Threshold Summary: 

Emission Threshold (Mt CO2 Eq) 1,000 10,000 25,000 100,000 

Number of Facilities below 4 8 9 9 

Percent of Facilities below 44.4% 88.9% 100.0% 100.0% 

Total Emissions of Facilities below 811 8,720 23,632 23,632 

Percent of Emissions below 3.4% 36.9% 100.0% 100.0% 

Number of Facilities above 5 1 0 0 

Percent of Facilities above 55.6% 11.1% 0.0% 0.0% 

Total Emissions of Facilities above 22,821 14,912 0 0 

Percent of Emissions above 96.6% 63.1% 0.0% 0.0% 

Total Number of PV Facilities 20 

Comments: Facilities are estimated (see 'PV' tab for assumptions) and include only silicon based PV (both crystalline and amorphous). Due to 

time contraints of analysis, we could only rely on report by Burton, 2006 ( PV Emissions during Photovoltaic (PV) Cell Fabrication: A Scoping 

Report). PFC Emissions and PFC using PV plants are likely overestimates (Please see Note 8).

PV Emission Threshold Summary: 

Emission Threshold (Mt CO2 Eq) 1,000 10,000 25,000 100,000 

Number of Facilities below 4 19 19 20 

Percent of Facilities below 20.0% 95.0% 95.0% 100.0% 

Total Emissions of Facilities below 572 38,699 38,699 73,039 

Percent of Emissions below 0.8% 53.0% 53.0% 100.0% 

Number of Facilities above 16 1 1 0 

Percent of Facilities above 80.0% 5.0% 5.0% 0.0% 

Total Emissions of Facilities above 72,466 34,340 34,340 0 

Percent of Emissions above 99.2% 47.0% 47.0% 0.0% 

1
TOTAL ELECTRONICS INDUSTRY 

Emission Threshold (Mt CO2 Eq) 1,000 10,000 25,000 100,000 Number of Facilities below 51 102 122 161 Percent of Facilities below 23.6% 47.2% 56.5% 74.5% Total Emissions of Facilities below 22,372 171,262 361,893 1,246,840 Percent of Emissions below 0.4% 2.9% 6.0% 20.8% Number of Facilities above 165 114 94 55 Percent of Facilities above 76.4% 52.8% 43.5% 25.5% Total Emissions of Facilities above 5,962,091 5,813,200 5,622,570 4,737,622 Percent of Emissions above 99.6% 97.1% 94.0% 79.2% 

Electronics Tier 1 Default Emission Factors (mean) 

CF4 C2F6 CHF3 C3F8 NF3 SF6 C6F14 Overall Emission Factor (Mt CO2 Eq) 

Semiconductors (kg/m2 Si) 0.90 1.00 0.04 0.05 0.04 0.20 0.30 Semiconductors (Mt CO2 Eq/m2 Si) LCD (g/m2 LCD) 0.50 0.90 4.00 LCD (Mt CO2 Eq/m2 LCD) PV-Cells (g/m2 PV-Cell) 5.00 0.20 PV-Cells (Mt CO2 Eq/m2 PV-Cell) MEMs (kg/m2 Si) 1.02 MEMs (Mt CO2 Eq/m2 Si) Source: IPCC, 2006 Semiconductors (Mt CO2 Eq/m2 TMLA) Comment: The upper bound of the 95% confidence interval in this sector is not used, as the uncertainties vary between 0 and 200% for semiconductors and LCDs. Adduncertainties are available for heat transfer fluids, MEMs, and PV.

Semiconductor Gas Usage Calculations 

CF4 C2F6 CHF3 C3F8 NF3 SF6

Emission Factor (Tier 2a) 0.9 0.6 0.4 0.4 0.11 0.2 Gas Usage (kg/m2 Si) 1.0 1.7 0.1 0.1 0.4 1.0 Percent of Total Gas Usage 24% 39% 2% 3% 9% 24% Source: IPCC, 2006 
Semiconductor 

Facility Number 

Est Actual Area of Si 

(m2

) 

Emissions from 

etching/cleaning 

(MMTCE) 

Emissions from 

etching/cleaning 

(Mt CO2 Eq) 

Emissions from 

heat transfer 

fluids (MMTCE) 

Emissions 

from heat 

transfer fluids 

(Mt CO2 Eq) 

Total Emissions 

(Mt CO2 Eq) 

Largest 

1 42024.28 0.04 139625.66 0.00 14776.26 154401.93 

2 37354.92 0.03 124111.70 0.00 13134.46 137246.16 

3 26265.18 0.05 183258.68 0.01 19393.85 202652.53 

4 21887.65 0.04 152715.57 0.00 16161.54 168877.11 

5 21887.65 0.04 132717.10 0.00 14045.15 146762.25 

6 21012.14 0.05 174532.08 0.01 18470.33 193002.41 

7 19455.69 0.07 271829.33 0.01 28767.08 300596.40 

8 18677.46 0.02 62055.85 0.00 6567.23 68623.08 

9 17510.12 0.03 104719.25 0.00 11082.20 115801.45 

10 17121.00 0.02 56884.53 0.00 6019.96 62904.49 

11 15890.43 0.01 52795.95 0.00 5587.28 58383.23 

12 14786.32 0.02 78604.08 0.00 8318.49 86922.57 

13 14445.85 0.04 141283.29 0.00 14951.69 156234.98 

14 14008.09 0.08 308254.45 0.01 32621.86 340876.32 

15 13618.98 0.02 81448.30 0.00 8619.49 90067.79 

16 12840.75 0.02 68261.44 0.00 7223.95 75485.39 

17 11906.88 0.01 39560.60 0.00 4186.61 43747.21 

18 11712.32 0.01 32728.25 0.00 3463.56 36191.81 

19 11673.41 0.06 228336.63 0.01 24164.34 252500.98 

20 11673.41 0.02 81448.30 0.00 8619.49 90067.79 

21 11673.41 0.01 54298.87 0.00 5746.33 60045.19 

22 11673.41 0.01 46541.89 0.00 4925.42 51467.31 

23 11673.41 0.01 34906.42 0.00 3694.07 38600.48 

24 11284.30 0.02 78733.36 0.00 8332.17 87065.53 

25 11162.70 0.01 29670.45 0.00 3139.96 32810.41 

26 10506.07 0.02 62831.55 0.00 6649.32 69480.87 

27 10506.07 0.01 54977.61 0.00 5818.15 60795.76 

28 10506.07 0.01 54977.61 0.00 5818.15 60795.76 

Other (see note 13) 

29 10116.96 0.01 40336.30 0.00 4268.70 44605.00 

30 9338.73 0.01 43439.10 0.00 4597.06 48036.16 

31 8908.27 0.01 32557.51 0.00 3445.49 36002.99 

32 8755.06 0.02 61086.23 0.00 6464.62 67550.84 

33 8560.50 0.03 119604.90 0.00 12657.51 132262.42 

34 8098.43 0.01 37669.84 0.00 3986.51 41656.35 

35 7782.27 0.05 195717.11 0.01 20712.29 216429.41 

36 7782.27 0.01 46541.89 0.00 4925.42 51467.31 

37 7004.05 0.02 58177.36 0.00 6156.78 64334.14 

38 7004.05 0.01 41887.70 0.00 4432.88 46320.58 

39 6614.93 0.04 145564.60 0.00 15404.77 160969.37 

40 6079.90 0.00 16989.33 0.00 1797.94 18787.28 

41 6019.10 0.02 81994.77 0.00 8677.32 90672.09 

42 5836.71 0.01 40724.15 0.00 4309.74 45033.90 

43 5836.71 0.01 34906.42 0.00 3694.07 38600.48 

44 5690.79 0.01 20798.41 0.00 2201.05 22999.45 

45 5603.24 0.03 109601.58 0.00 11598.88 121200.47 

46 5573.91 0.01 20371.24 0.00 2155.84 22527.08 

3
Semiconductor 

Facility Number 

Est Actual Area of Si 

(m2

) 

Emissions from 

etching/cleaning 

(MMTCE) 

Emissions from 

etching/cleaning 

(Mt CO2 Eq) 

Emissions from 

heat transfer 

fluids (MMTCE) 

Emissions 

from heat 

transfer fluids 

(Mt CO2 Eq) 

Total Emissions 

(Mt CO2 Eq) 

47 5471.91 0.00 15290.40 0.00 1618.15 16908.55 

48 5471.91 0.00 3636.08 0.00 384.80 4020.88 

49 5362.47 0.00 14984.59 0.00 1585.79 16570.38 

50 5253.04 0.02 88072.70 0.00 9320.53 97393.23 

51 4377.53 0.00 12232.32 0.00 1294.52 13526.84 

52 4377.53 0.00 8726.60 0.00 923.52 9650.12 

53 4358.07 0.00 11583.76 0.00 1225.88 12809.64 

54 4333.75 0.00 14398.90 0.00 1523.80 15922.70 

55 4202.43 0.01 35229.08 0.00 3728.21 38957.29 

56 3917.89 0.01 27661.52 0.00 2927.36 30588.87 

57 3891.14 0.02 57084.16 0.00 6041.09 63125.24 

58 3891.14 0.01 43492.69 0.00 4602.73 48095.42 

59 3647.94 0.02 56064.80 0.00 5933.21 61998.01 

60 3502.02 0.00 9308.38 0.00 985.08 10293.46 

61 3283.15 0.01 36696.96 0.00 3883.56 40580.51 

62 3283.15 0.00 8726.60 0.00 923.52 9650.12 

63 3064.27 0.01 41742.79 0.00 4417.54 46160.33 

64 2845.39 0.01 47706.05 0.00 5048.62 52754.67 

65 2723.80 0.00 1809.96 0.00 191.54 2001.51 

66 2626.52 0.01 22018.18 0.00 2330.13 24348.31 

67 2373.59 0.01 39795.81 0.00 4211.50 44007.31 

68 2334.68 0.00 6523.90 0.00 690.41 7214.31 

69 2279.96 0.00 6371.00 0.00 674.23 7045.23 

70 2188.76 0.02 55809.96 0.00 5906.24 61716.20 

71 2188.76 0.01 33638.88 0.00 3559.93 37198.80 

72 2188.76 0.00 8726.60 0.00 923.52 9650.12 

73 2188.76 0.00 6116.16 0.00 647.26 6763.42 

74 2188.76 0.00 1454.43 0.00 153.92 1608.35 

75 1945.57 0.00 16309.76 0.00 1726.02 18035.78 

76 1945.57 0.00 16309.76 0.00 1726.02 18035.78 

77 1945.57 0.00 5436.59 0.00 575.34 6011.93 

78 1867.75 0.00 14352.59 0.00 1518.90 15871.49 

79 1860.45 0.00 6799.48 0.00 719.57 7519.05 

80 1751.01 0.01 26911.10 0.00 2847.94 29759.04 

81 1751.01 0.00 14678.78 0.00 1553.42 16232.21 

82 1751.01 0.00 4892.93 0.00 517.81 5410.74 

83 1626.37 0.00 4544.65 0.00 480.95 5025.60 

84 1557.22 0.00 4351.42 0.00 460.50 4811.92 

85 1556.45 0.01 22833.66 0.00 2416.43 25250.10 

86 1367.98 0.00 3822.60 0.00 404.54 4227.14 

87 1203.82 0.01 18501.38 0.00 1957.96 20459.34 

88 1167.34 0.00 3261.95 0.00 345.20 3607.16 

89 1167.34 0.00 3102.79 0.00 328.36 3431.15 

90 1167.34 0.00 2327.09 0.00 246.27 2573.37 

91 1094.38 0.00 3058.08 0.00 323.63 3381.71 

92 1045.74 0.00 2922.17 0.00 309.25 3231.41 

93 972.78 0.00 7475.31 0.00 791.09 8266.40 

94 972.78 0.00 2718.29 0.00 287.67 3005.96 

4
Semiconductor 

Facility Number 

Est Actual Area of Si 

(m2

) 

Emissions from 

etching/cleaning 

(MMTCE) 

Emissions from 

etching/cleaning 

(Mt CO2 Eq) 

Emissions from 

heat transfer 

fluids (MMTCE) 

Emissions 

from heat 

transfer fluids 

(Mt CO2 Eq) 

Total Emissions 

(Mt CO2 Eq) 

95 963.06 0.00 639.95 0.00 67.72 707.68 

96 875.51 0.00 2446.46 0.00 258.90 2705.37 

97 836.59 0.00 6428.76 0.00 680.34 7109.10 

98 787.96 0.00 9082.50 0.00 961.18 10043.68 

99 778.23 0.00 6523.90 0.00 690.41 7214.31 

100 766.07 0.00 14984.59 0.00 1585.79 16570.38 

101 729.59 0.00 2038.72 0.00 215.75 2254.47 

102 622.58 0.00 5219.12 0.00 552.33 5771.45 

103 607.99 0.00 8282.30 0.00 876.50 9158.80 

104 547.19 0.00 1529.04 0.00 161.81 1690.85 

105 486.39 0.00 1359.15 0.00 143.84 1502.98 

106 486.39 0.00 1359.15 0.00 143.84 1502.98 

107 459.64 0.00 1284.39 0.00 135.92 1420.32 

108 420.24 0.02 62384.83 0.00 6602.04 68986.87 

109 389.11 0.00 6523.90 0.00 690.41 7214.31 

110 350.20 0.00 15126.11 0.00 1600.76 16726.88 

111 350.20 0.00 5382.22 0.00 569.59 5951.81 

112 322.96 0.00 902.47 0.00 95.51 997.98 

113 218.88 0.00 611.62 0.00 64.73 676.34 

114 218.88 0.00 611.62 0.00 64.73 676.34 

115 194.56 0.00 2854.21 0.00 302.05 3156.26 

116 194.56 0.00 1630.98 0.00 172.60 1803.58 

117 175.10 0.00 2446.46 0.00 258.90 2705.37 

118 153.21 0.00 428.13 0.00 45.31 473.44 

119 145.92 0.00 407.74 0.00 43.15 450.89 

120 125.49 0.00 350.66 0.00 37.11 387.77 

121 109.44 0.00 305.81 0.00 32.36 338.17 

122 109.44 0.00 305.81 0.00 32.36 338.17 

123 90.35 0.00 3902.54 0.00 413.00 4315.53 

124 88.72 0.00 3131.88 0.00 331.44 3463.32 

125 87.55 0.00 244.65 0.00 25.89 270.54 

126 77.82 0.00 3232.08 0.00 342.04 3574.12 

127 77.82 0.00 217.46 0.00 23.01 240.48 

128 63.04 0.00 2722.70 0.00 288.14 3010.84 

129 62.26 0.00 9242.20 0.00 978.08 10220.28 

130 49.81 0.00 695.88 0.00 73.64 769.53 

131 48.64 0.00 135.91 0.00 14.38 150.30 

132 45.58 0.00 127.37 0.00 13.48 140.85 

133 34.14 0.00 4478.26 0.00 473.92 4952.18 

134 31.13 0.00 1739.71 0.00 184.11 1923.82 

135 31.13 0.00 1304.78 0.00 138.08 1442.86 

136 26.27 0.00 4770.60 0.00 504.86 5275.47 

137 26.27 0.00 1651.36 0.00 174.76 1826.12 

138 21.89 0.00 61.16 0.00 6.47 67.63 

139 17.51 0.00 2568.79 0.00 271.85 2840.64 

140 17.51 0.00 756.31 0.00 80.04 836.34 

141 15.56 0.00 652.39 0.00 69.04 721.43 

142 14.01 0.00 587.15 0.00 62.14 649.29 

5
6

Semiconductor 

Facility Number 

Est Actual Area of Si 

(m2

) 

Emissions from 

etching/cleaning 

(MMTCE) 

Emissions from 

etching/cleaning 

(Mt CO2 Eq) 

Emissions from 

heat transfer 

fluids (MMTCE) 

Emissions 

from heat 

transfer fluids 

(Mt CO2 Eq) 

Total Emissions 

(Mt CO2 Eq) 

143 12.45 0.00 521.91 0.00 55.23 577.15 

144 10.94 0.00 30.58 0.00 3.24 33.82 

145 8.37 0.00 116.89 0.00 12.37 129.26 

146 7.78 0.00 1413.51 0.00 149.59 1563.10 

147 7.78 0.00 761.12 0.00 80.55 841.67 

148 7.78 0.00 336.14 0.00 35.57 371.71 

149 7.00 0.00 1272.16 0.00 134.63 1406.79 

150 6.23 0.00 260.96 0.00 27.62 288.57 

151 6.23 0.00 260.96 0.00 27.62 288.57 

152 5.45 0.00 228.34 0.00 24.16 252.50 

153 4.86 0.00 271.83 0.00 28.77 300.60 

154 4.67 0.00 195.72 0.00 20.71 216.43 

155 4.38 0.00 183.48 0.00 19.42 202.90 

156 3.50 0.00 636.08 0.00 67.31 703.40 

157 3.50 0.00 342.50 0.00 36.25 378.75 

158 3.11 0.00 173.97 0.00 18.41 192.38 

159 3.11 0.00 43.49 0.00 4.60 48.10 

160 2.63 0.00 165.14 0.00 17.48 182.61 

161 2.49 0.00 139.18 0.00 14.73 153.91 

162 1.95 0.00 285.42 0.00 30.21 315.63 

163 1.75 0.00 305.81 0.00 32.36 338.17 

164 1.75 0.00 305.81 0.00 32.36 338.17 

165 1.75 0.00 134.56 0.00 14.24 148.80 

166 1.56 0.00 119.60 0.00 12.66 132.26 

167 1.56 0.00 21.75 0.00 2.30 24.05 

168 1.31 0.00 247.70 0.00 26.21 273.92 

169 0.88 0.00 42.81 0.00 4.53 47.34 

170 0.49 0.00 6.80 0.00 0.72 7.51 

171 0.39 0.00 38.06 0.00 4.03 42.08 

172 0.39 0.00 16.31 0.00 1.73 18.04 

173 0.35 0.00 26.91 0.00 2.85 29.76 

174 0.22 0.00 16.82 0.00 1.78 18.60 

175 0.19 0.00 10.87 0.00 1.15 12.02 

Totals 736357.60 1.42 5192197.87 0.15 549478.42 5741676.29 

Factors and Assumptions 

175 

Number of Semiconductor 

facilities 

5,987 Total TMLA of Partner Facilities 

7443 Total TMLA All Facilities 

0.70 2006 Semiconductor Partner reported emissions (MMTCE) 

0.07 2006 Semiconductor Partner estimated heat transfer fluid emissions (MMTCE) 

3.66 

2006 US Uncontrolled Semiconductor Emissions (MMTCE). PEVM 

v4.0.0701.0701 

0.39 2006 US estimated heat transfer fluid emissions (MMTCE) 

12.02 Total US Emissions Mt CO2 Eq (Partner reported + Non-Partner uncontrolled, scaled-up to include heat transfer fluids) 
MEMS Facility Number Substrate Processed (m2

 Si) Emissions (Mt CO2 Eq) 

1 547.19 13,356.07 

2 21.89 534.24 

3 218.88 5,342.43 

4 2,188.76 53,424.28 

5 153.21 3,739.70 

6 218.88 5,342.43 

7 459.64 11,219.10 

8 10.94 267.12 

9 87.55 2,136.97 

10 218.88 5,342.43 

11 109.44 2,671.21 

12 1,751.01 42,739.43 

Totals 

 

5,986.27 146,115.41 

LCD Facility Number Substrate Area (m2) Emissions (Mt CO2 Eq) 

1 24,760 2,626 

2 12,000 1,273 

3 848 90 

4 2,121 225 

5 1,178 125 

6 24,760 2,626 

7 3,502 371 

8 13,056 1,385 

9 140,616 14,912 

Totals 222,841 23,632 

a-Si only 

PV Facility Number m2 a-Si 

Emissions 

(Mt CO2 Eq) 

1 1,000,000 34,340 

2 33,333 1,145 

3 16,667 572 

4 0 0 

5 0 0 

6 0 0 

Crystalline Si 

PV Facility Number m2 a-Si 

Emissions 

(Mt CO2 Eq) 

7 76,923 2,642 

8 76,923 2,642 

9 76,923 2,642 

10 76,923 2,642 

11 76,923 2,642 

12 76,923 2,642 

13 76,923 2,642 

14 76,923 2,642 

15 76,923 2,642 

16 76,923 2,642 

17 76,923 2,642 

18 76,923 2,642 

19 76,923 2,642 

20 76,923 2,642 

Total 2,126,923 73,039 

7
Conversion Type Conversion Factor Units Comments 

SF6 SAR GWP 23,900 CO2 Eq NF3 GWP 8,000 CO2 Eq 17,200 is FAR GWP. 10, 800 is TAR GWP. CF4 SAR GWP 6,500 CO2 Eq C2F6 SAR GWP 9,200 CO2 Eq C3F6 SAR GWP C3F8 SAR GWP 7,000 CO2 Eq C4F6 SAR GWP C4F8O SAR GWP 12,100 CO2 Eq 

This GWP is published by a manufacturer, aSource: http://www.future-fab.com/documen

c-C4F8 SAR GWP 8,700 CO2 Eq C5F8 SAR GWP CHF3 SAR GWP 11,700 CO2 Eq C6F14 SAR GWP 7,400 CO2 Eq Kg to Mt 0.001 Mt/kg C to CO2 3.67 CO2/C units in one million units 1,000,000 NA Units in one thousand units 1,000 NA Square inches to square feet 0.006944 ft2/in2Square feet to square meters 0.092900 m2/ft2Electronics Avg Capacity Utilization 100% percent 

Assumed that all fabs run close to 100% utilexplore capacity utilization further. 

heat transfer fluid emissions factor 11% percent 

Assumed that 9.57% of total semiconductor (HTFs). Based on proportion of heat transfdefault values, we find that 2.22 Mt CO2 Eq/Eq/square meters of silicon are from HTFs. multiply etching/cleaning emissions by 11% 

mm2 to m2 1.E-06 m2/mm2Yellow Highlight Indicates lack of IPCC GWP value PEVM Emission Factor 0.000602601 MMTCE/MSI of TMLA PEVM Emission Factor 0.002209538 Mt CO2 Eq/square inches of TMLA PEVM Emission Factor 3.425122636 Mt CO2 Eq/m2 of TMLA PEVM Emission Factor (w/Heat transfer fluids) 0.000602601 MMTCE/MSI of TMLA Capacity Utilization for R&D and Pilot Facilities 20% percent 
Notes

1. No SAR GWP value exists for NF3. We have used NF3 GWP of 8,000 for this analysis (source: Molina et al, Geophysical ResearcLetters, Vol. 22, 1873-6 (1995)). This value is lower than both the TAR (10,800) and FAR (17,200) GWPs for NF3, and is the GWP vaused in the US Inventory for GHG Emissions and Sinks for the semiconductor sector. 2. Assumed that pilot/R&D semiconductor fabrication facilities manufacture logic devices (when product class was not specified). 3. Assumed that all full-scale semiconductor facilities operate at 100% of design capacity and all pilot/R&D facilities operate at 20% of design capacity. 4. No IPCC Tier 1 default emission factor for MEMS. Assumed that MEMS emission factor is equal to 1.2 x (1/.24) x IPCC Tier 1 SF6 emission factor for semiconductor devices. We made this assumption because anisotropic etches are desired for MEMS, which means Bosch process is desired (which uses SF6/C4F8 process recipe). C4F8 has a high utilization, whereas, SF6 has low utilization. Therefore, we have assumed the emission rate of MEMS is equal to that of SF6 etching in semiconductors. However, SF6 usage (in kgs of gas) in semiconductor manufacturing accounts for only 24% of total PFC gas usage (whereas we assume it accounts for 100% of usage in MEMS manufacturing). Therefore, the semiconductor SF6emission factor is scaled-up by 1/.24. Additionally, the MEMS emission factor was scaled up by an additional factor of 1.2 to account for increased SF6 usage in MEMS manufacturing as compared to semiconductor manufacturing. 5. Assumed that only MEMS fabs that use PFCs (as opposed to liquid etchants) are those that manufacture wafers of at least 150 mm in diameter. 6. WFW appears to not contain a complete listing of U.S. MEMS fabs in the U.S. for the year 2007. A better database would be the YDevelopments (France) database on MEMs devices of the World, which is as comprehensive towards MEMS as WFW is towards semSee: http://www.yole.fr/pagesAn/products/wordmem.asp for March 2008 Report details. 7. LCD substrate area is multiplied by 2 as the IPCC 2006 default emission factor is in terms of total LCD area (including both the TFT substrate area and the color filter substrate area, even though only the TFT substrate area utilizes PFCs). 8. We relied on a report by Burton, 2006 (PV Emissions during Photovoltaic (PV) Cell Fabrication: A Scoping Report). Information was limited at the time the scoping report was written. Since that time we haven't learned any more about the use of PFCs in crystalline silicon (and the 2006 report itself had little information on use of PFCs in crystalline silicon). On the thin film side, although we don't know much about PFC use, we know that thin film production has greatly increased in the form of amorphous si- CIGS and CdTe. For the latter two types of technology, PFCs are not used. For amorphous silicon, PFCs are only used if the silicon is deposited in PECVD chambers and the chambers are cleaned with PFCs during PECVD. 
Notes9. Due to lack of data of crystalline PV plants, we have assumed that all plants have a capacity of approximately 10MW (Expert Judgment). We have determined the total number of facilities in the US by dividing our estimate for total crystalline PV production capacity in the US by 10MW. Further analysis/purchasing of research reports could clarify the distribution of crystalline PV facilities in the US. 10. We have assumed 100% utilization efficiency for all electronics sectors due to insufficient data to determine exact capacity utilization. 11. The upper bound of the 95% confidence interval in this sector is not used to determine alternative threshold capacities, as no exact uncertainty for 2006 IPCC default factors exist for semiconductors and LCDs (only information available is that uncertainties vary between 0 and 200% for semiconductors and LCDs). Additionally, no uncertainties are available for heat transfer fluids, MEMS, and PV. 12. We assumed that 9.57% of total semiconductor emissions are from heat transfer fluids (HTFs). Based on proportion of heat transfer fluid emissions using 2006 IPCC tier 1 default values, we find that 2.22 Mt CO2 Eq/square meter of silicon out of 23.19 Mt CO2 Eq/square meter of silicon are from HTFs. Therefore, to find the HTF emissions we multiplied etching/cleaning emissions by 11% (or 9.57%/90.43%). 13. We have assumed that the “largest” semiconductor facilities include an estimated 29 facilities (as opposed to 28) to account for neand openings.