# Patent

## Title
Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same, pattern forming method, manufacturing method of electronic device, and electronic device

## Abstract

There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin containing a repeating unit represented by the specific formula (1) and a repeating unit represented by the specific formula (A); a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition; a pattern forming method comprising (i) a step of forming a film from the actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using a developer to form a pattern; a method for manufacturing an electronic device, comprising the pattern forming method, and an electronic device manufactured by the manufacturing method of an electronic device.

## Background
CROSS REFERENCE TO RELATED APPLICATION
This is a continuation of International Application No. PCT/JP2013/070829 filed on Jul. 25, 2013, and claims priority from Japanese Patent Application No. 2012-167816 filed on Jul. 27, 2012, and Japanese Patent Application No. 2013-054403 filed on Mar. 15, 2013 the entire disclosures of which are incorporated therein by reference.


TECHNICAL FIELD
The present invention relates to an actinic ray-sensitive or radiation-sensitive resin composition, a resist film using the same, a pattern forming method, a manufacturing method of an electronic device, and an electronic device. More specifically, the present invention relates to an actinic ray-sensitive or radiation-sensitive resin composition suitably used in the ultramicrolithography process applicable to, for example, a process for producing VLSI or a high-capacity microchip, a process for fabricating a nanoimprint mold, and a process for producing a high-density information recording medium, as well as in other photofabrication processes, a resist film using the same, a pattern forming method, a manufacturing method of an electronic device, and an electronic device.
BACKGROUND ART
In the process of producing a semiconductor device such as IC and LSI, microfabrication by lithography using a photoresist composition has been conventionally performed. Recently, with the increase in integration degree of an integrated circuit, formation of an ultrafine pattern in the sub-micron or quarter-micron region is required. To cope with this requirement, the exposure wavelength also tends to become shorter, for example, from g line to i line or further to KrF excimer laser light. At present, other than the excimer laser light, development of lithography using electron beam, X-ray or EUV light is also proceeding.
The lithography using electron beam, X-ray or EUV light is positioned as a next-generation or next-next-generation pattern formation technology and a high-sensitivity and high-resolution resist composition is being demanded.
Particularly, in order to shorten the wafer processing time, elevation of sensitivity is very important, but when higher sensitivity is secured, the pattern profile or the resolution indicated by the limiting resolution line width is deteriorated, and development of a resist composition satisfying all of these properties at the same time is strongly demanded.
High sensitivity is in a trade-off relationship with high resolution and good pattern profile, and it is very important how to satisfy all of these properties at the same time.
In order to solve such a problem, for example, in JP-A-2008-33287 (the term “JP-A” as used herein means an “unexamined published Japanese patent application”), JPA-2008-31160, JP-A-2000-29215 and JP-A-2004-45448, a positive resist composition using a resin having an acetal-type protective group is disclosed, and it is demonstrated that according to this composition, resolution, sensitivity and the like are improved.
In recent years, a pattern forming method using an organic solvent-containing developer (organic developer) is being also developed, and it is indicated that according to this method, a high-definition fine pattern can be stably formed.
Furthermore, needs for formation of a fine isolated pattern are abruptly increasing in recent years, and to meet the needs, in forming a fine isolated pattern with a narrow line width, more improvements are required on the sensitivity, resolution, PEB (post-exposure baking) temperature dependency, pattern profile and etching resistance.
SUMMARY OF INVENTION
An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition ensuring that in the formation of a fine isolated pattern with a narrow line width (for example, a line width on the order of several tens of nm), the resolution is excellent, the PEB temperature dependency is low, the pattern profile is rectangular and the sensitivity and etching resistance are high, a resist film using the same, a pattern forming method, a manufacturing method of an electronic device, and an electronic device.
That is, the present invention is as follows.

    [1] An actinic ray-sensitive or radiation-sensitive resin composition comprising:


(P) a resin containing a repeating unit represented by the following formula (1) and a repeating unit represented by the following formula (A):




wherein each of R′ and L1 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group, L1 may combine with L to form a ring and in this case, L1 represents a single bond, an alkylene group or a carbonyl group,
L represents a single bond or a divalent linking group, and in the case of forming a ring together with L1, L represents a trivalent linking group,
each of R1a, R1b and R1c independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or a heterocyclic group,
at least two of R1a, R1b and R1c may combine with each other to form a ring, or at least one of R1a, R1b and R1c may combine with R2 to form a ring,
R2 represents an alkyl group or a cycloalkyl group, and
R3 represents a hydrogen atom or an alkyl group;




wherein each of R21, R22 and R23 independently represents a hydrogen atom, an alkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group, provided that R22 may combine with Ar2 to form a ring and in this case, R22 represents a single bond or an alkylene group,
X2 represents a single bond, —COO— or —CONR30—, wherein R30 represents a hydrogen atom or an alkyl group,
L2 represents a single bond or an alkylene group,
Ar2 represents an (n+1)-valent aromatic ring group and in the case of combining with R22 to form a ring, Ar2 represents an (n+2)-valent aromatic ring group, and
n represents an integer of 1 to 4.

    [2] The actinic ray-sensitive or radiation-sensitive resin composition as described in [1],


wherein in formula (1), each of R1a, R1b and R1c is independently an alkyl group or a cycloalkyl group.

    [3] The actinic ray-sensitive or radiation-sensitive resin composition as described in [1] or [2],


wherein in formula (1), R3 is a hydrogen atom.

    [4] The actinic ray-sensitive or radiation-sensitive resin composition as described in any one of [1] to [3],


wherein in formula (1), L is a single bond, a divalent aromatic group, a divalent group having a norbornylene group, or a divalent group having an adamantylene group.

    [5] The actinic ray-sensitive or radiation-sensitive resin composition as described in any one of [1] to [4],


wherein the repeating unit represented by formula (1) is a repeating unit represented by any one of the following formulae (1-1) to (1-4):




wherein in formulae (1-1) to (1-4),
R′, R1a, R1b, R1c, R2 and R3 have the same meanings as R′, R1a, R1b, R1c, R2 and R3 in formula (1), respectively, and
at least two of R1a, R1b and R1c may combine with each other to form a ring, or at least one of R1a, R1b and R1c may combine with R2 to form a ring.

    [6] The actinic ray-sensitive or radiation-sensitive resin composition as described in any one of [1] to [5],


wherein the repeating unit represented by formula (A) is a repeating unit represented by the following formula (A1) or (A2):




wherein R23 has the same meaning as R23 in formula (A).

    [7] The actinic ray-sensitive or radiation-sensitive resin composition as described in any one of [1] to [6], further comprising a compound capable of generating an acid upon irradiation with an actinic ray or radiation.
    [8] A resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition described in any one of [1] to [7].
    [9] A pattern forming method comprising:


(i) a step of forming a film from the actinic ray-sensitive or radiation-sensitive resin composition described in any one of [1] to [7],
(ii) a step of exposing the film, and
(iii) a step of developing the exposed film by using a developer to form a pattern.

    [10] A pattern forming method comprising:


(i) a step of forming a film from the actinic ray-sensitive or radiation-sensitive resin composition described in any one of [1] to [7],
(ii) a step of exposing the film, and
(iii′) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern.

    [11] The pattern forming method as described in [9] or [10], wherein the exposure is performed using an X-ray, an electron beam or EUV.
    [12] A method for manufacturing an electronic device, comprising the pattern forming method described in [11].
    [13] An electronic device manufactured by the manufacturing method of an electronic device described in [12].


According to the present invention, an actinic ray-sensitive or radiation-sensitive resin composition ensuring that in the formation of a fine isolated pattern with a narrow line width (for example, a line width on the order of several tens of nm), the resolution is excellent, the PEB temperature dependency is low, the pattern profile is rectangular and the sensitivity and etching resistance are high, a resist film using the same, a pattern forming method, a manufacturing method of an electronic device, and an electronic device can be provided.


DESCRIPTION OF EMBODIMENTS
The mode for carrying out the present invention is described below.
In the description of the present invention, when a group (atomic group) is denoted without specifying whether substituted or unsubstituted, the group encompasses both a group having no substituent and a group having a substituent. For example, “an alkyl group” with no designation of substituted or unsubstituted encompasses not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
In the description of the present invention, the “actinic ray” or “radiation” means, for example, a bright line spectrum of mercury lamp, a far ultraviolet ray typified by excimer laser, an extreme-ultraviolet (EUV) ray, an X-ray or an electron beam (EB). Also, in the present invention, the “light” means an actinic ray or radiation.
Furthermore, in the present invention, unless otherwise indicated, the “exposure” encompasses not only exposure to a mercury lamp, a far ultraviolet ray typified by excimer laser, an X-ray, EUV light or the like but also lithography with a particle beam such as electron beam and ion beam.
The actinic ray-sensitive or radiation-sensitive resin composition of the present invention comprises (P) a resin containing a repeating unit represented by the following formula (1) and a repeating unit represented by the following formula (A):




In formula (1), each of R′ and L1 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group. L1 may combine with L to form a ring and in this case, L1 represents a single bond, an alkylene group or a carbonyl group.
L represents a single bond or a divalent linking group, and in the case of forming a ring together with L1, L represents a trivalent linking group.
Each of R1a, R1b and R1c independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or a heterocyclic group.
At least two of R1a, R1b and R1c may combine with each other to form a ring, or at least one of R1a, R1b and R1c may combine with R2 to form a ring.
R2 represents an alkyl group or a cycloalkyl group.
R3 represents a hydrogen atom or an alkyl group.




In the formula, each of R21, R22 and R23 independently represents a hydrogen atom, an alkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group, provided that R22 may combine with Ar2 to form a ring and in this case, R22 represents a single bond or an alkylene group.
X2 represents a single bond, —COO— or —CONR30—, wherein R30 represents a hydrogen atom or an alkyl group.
L2 represents a single bond or an alkylene group.
Ar2 represents an (n+1)-valent aromatic ring group and in the case of combining with R22 to form a ring, Ar2 represents an (n+2)-valent aromatic ring group.
n represents an integer of 1 to 4.
The resin (P) is a resin having a structure where in the repeating unit represented by formula (1), a carboxyl group as a polar group is protected by acetalization or ketalization with a leaving group capable of decomposing and leaving by an action of an acid.
In the case of performing negative development using an organic solvent-containing developer, the resin (P) is a resin capable of increasing in the polarity by the action of an acid to decrease the solubility for the organic solvent-containing developer, and in the case of performing positive development using an alkali developer, the resin (P) is a resin capable of increasing in the polarity by the action of an acid to increase the solubility for the alkali developer. Incidentally, in the case of performing positive development using an alkali developer, the carboxyl group as a polar group functions as an alkali-soluble group.
The actinic ray-sensitive or radiation-sensitive resin composition according to the present invention may be used for negative development (development where the exposed area remains as a pattern and the unexposed area is removed) or may be used for positive development (development where the exposed area is removed and the unexposed area remains as a pattern). That is, the actinic ray-sensitive or radiation-sensitive resin composition according to the present invention may be an actinic ray-sensitive or radiation-sensitive resin composition for organic solvent development, which is used for development using an organic solvent-containing developer, or may be an actinic ray-sensitive or radiation-sensitive resin composition for alkali development, which is used for development using an alkali developer. Here, the term “for organic solvent development” means usage where the composition is subjected to at least a step of performing development by using an organic solvent-containing developer, and the term “for alkali development” means usage where the composition is subjected to at least a step of performing development by using an alkali developer.
The actinic ray-sensitive or radiation-sensitive resin composition of the present invention is typically a resist composition and is preferably a negative resist composition (that is, a resist composition for organic solvent development), because particularly high effects can be obtained. Also, the composition according to the present invention is typically a chemical amplification resist composition.
The actinic ray-sensitive or radiation-sensitive resin composition of the present invention ensures, at the formation of a fine isolated pattern with a narrow line width (for example, a line width on the order of several tens of nm), excellent resolution, low PEB temperature dependency, rectangular pattern profile, and high sensitivity and etching resistance. The reason therefor is not clearly known but is presumed as follows.
The repeating unit represented by formula (A) has an aromatic ring group, and thanks to this configuration, the etching resistance is considered to be increased. Also, although the reason is not clearly known, it is believed that since the resin (P) contains a repeating unit represented by formula (A), the sensitivity is elevated. Furthermore, the repeating unit represented by formula (A) has a specific hydroxyl group, and this configuration is considered to bring about an increase in the adherence to substrate and in turn, prevent an isolated pattern from generation of pattern collapse, resulting in enhanced resolution and a rectangular pattern profile.
The decomposition reaction of the repeating unit with an acetal protection of carboxylic acid represented by formula (1), which is induced by the action of an acid, has an appropriate activation energy (Ea), and this is considered to allow for appropriate control of the decomposition induced by the action of an acid and bring about reduction in the PEB temperature dependency.
[1] (P) Resin
The resin (P) contains a repeating unit represented by the following formula (1):




In formula (1), each of R′ and L1 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group. L1 may combine with L to form a ring and in this case, L1 represents a single bond, an alkylene group or a carbonyl group.
L represents a single bond or a divalent linking group, and in the case of forming a ring together with L1, L represents a trivalent linking group.
Each of R1a, R1b and R1c independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or a heterocyclic group.
At least two of R1a, R1b and R1c may combine with each other to form a ring, or at least one of R1a, R1b and R1c may combine with R2 to form a ring.
R2 represents an alkyl group or a cycloalkyl group.
R3 represents a hydrogen atom or an alkyl group.
The alkyl group of R′ and L1 in formula (1) is preferably an alkyl group having a carbon number of 20 or less, such as methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, sec-butyl group, hexyl group, 2-ethylhexyl group, octyl group and dodecyl group, which may have a substituent, more preferably an alkyl group having a carbon number of 8 or less, still more preferably an alkyl group having a carbon number of 3 or less.
As the alkyl group contained in the alkoxycarbonyl group, the same as the alkyl group in R′ and L1 is preferred.
The cycloalkyl group may be either monocyclic or polycyclic and is preferably a monocyclic cycloalkyl group having a carbon number of 3 to 8, such as cyclopropyl group, cyclopentyl group and cyclohexyl group, which may have a substituent.
The halogen atom includes fluorine atom, chlorine atom, bromine atom and iodine atom, with fluorine atom being preferred.
Preferred examples of the substituent on the groups above include an alkyl group, a cycloalkyl group, an aryl group, an amino group, an amido group, a ureido group, a urethane group, a hydroxyl group, a carboxyl group, a halogen atom, an alkoxy group, a thioether group, an acyl group, an acyloxy group, an alkoxycarbonyl group, a cyano group, and a nitro group. The carbon number of the substituent is preferably 8 or less.
In the case where L1 is an alkylene group and forms a ring together with L, the alkylene group is preferably an alkylene group having a carbon number of 1 to 8, such as methylene group, ethylene group, propylene group, butylene group, hexylene group and octylene group, more preferably an alkylene group having a carbon number of 1 to 4, still more preferably an alkylene group having a carbon number of 1 or 2. The ring formed by combining L1 and L is preferably a 5- or 6-membered ring.
In formula (1), R′ is preferably a hydrogen atom, an alkyl group or a halogen atom, more preferably a hydrogen atom, a methyl group, an ethyl group, a trifluoromethyl group (—CF3), a hydroxymethyl group (—CH2—OH), a chloromethyl group (—CH2—Cl) or a fluorine atom (—F). L1 is preferably a hydrogen atom, an alkyl group, a halogen atom or an alkylene group (forms a ring together with L), more preferably a hydrogen atom, a methyl group, an ethyl group, a trifluoromethyl group (—CF3), a hydroxymethyl group (—CH2—OH), a chloromethyl group (—CH2—Cl), a fluorine atom (—F), a methylene group (forms a ring together with L) or an ethylene group (forms a ring together with L).
Examples of the divalent linking group represented by L include an alkylene group, a divalent aromatic ring group, a cycloalkylene group, —COO-L11-, —O-L11-, —CONH—, and a group formed by combining two or more thereof. Here, L11 represents an alkylene group, a cycloalkylene group, a divalent aromatic ring group, and a group formed by combining an alkylene group and a divalent aromatic ring group.
The alkylene group as the divalent linking group of L and L11 includes an alkylene group having a carbon number of 1 to 8, such as methylene group, ethylene group, propylene group, butylene group, hexylene group and octylene group. The alkylene group is preferably an alkylene group having a carbon number of 1 to 4, more preferably an alkylene group having a carbon number of 1 or 2.
The divalent aromatic ring group of L and L11 is preferably a phenylene group such as 1,4-phenylene group, 1,3-phenylene group and 1,2-phenylene group, or a 1,4-naphthylene group, more preferably a 1,4-phenylene group.
The cycloalkylene group as the divalent linking group of L and L11 is preferably a cycloalkylene group having a carbon number of 3 to 20, and examples thereof include a cyclopropylene group, a cyclobutylene group, a cyclopentylene group, a cyclohexylene group, a cycloheptylene group, a cyclooctylene group, a norbornylene group, and an adamantylene group.
In the cycloalkylene group of L and L11, the carbon constituting the ring (the carbon contributing to ring formation) may be a carbonyl carbon or may be replaced by a heteroatom such as oxygen atom, and also, an ester bond may be contained to form a lactone ring.
L is preferably a single bond, a divalent aromatic ring group, a divalent group having a norbornylene group, or a divalent group having an adamantylene group.
Suitable examples of the trivalent linking group represented by L when L combines with L1 to form a ring include groups formed by removing one arbitrary hydrogen atom from specific examples recited above for the divalent linking group represented by L.
Specific preferred examples of the partial structure represented by the following formula (b-0) in formula (1) are illustrated below, but the present invention is not limited thereto. * indicates a bond connected to the carbon atom to which R3 in formula (1) is bonded.




In formula (b-0), R′, L and L1 are the same as R′, L and L1 in formula (1).
* indicates a bond connected to the carbon atom to which R3 in formula (1) is bonded.
In specific examples illustrated below, * indicates a bond connected to the carbon atom to which R3 in formula (1) is bonded.
















The alkyl group of R1a, R1b and R1c may have a substituent and may be linear or branched, and the alkyl group is preferably an alkyl group having a carbon number of 1 to 20, more preferably an alkyl group having a carbon number of 1 to 10. Specific examples of the alkyl group of R1a, R1b and R1c include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, a tert-butyl group, a neopentyl group, a hexyl group, a 2-ethylhexyl group, an octyl group, and a dodecyl group. The alkyl group of R1a, R1b and R1c is preferably a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, a tert-butyl group or a neopentyl group.
The cycloalkyl group of R1a, R1b and R1c may have a substituent and may be monocyclic or polycyclic, and the cycloalkyl group is preferably a cycloalkyl group having a carbon number of 3 to 20, more preferably a cycloalkyl group having a carbon number of 3 to 10. Specific examples of the cycloalkyl group of R1a, R1b and R1c include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a decahydronaphthyl group, a cyclodecyl group, a 1-adamantyl group, a 2-adamantyl group, a 1-norbornyl group, and a 2-norbornyl group. The cycloalkyl group of R1a, R1b and R1c is preferably a cyclopropyl group, a cyclopentyl group or a cyclohexyl group.
The aryl group of R1a, R1b and R1c is preferably an aryl group having a carbon number of 6 to 15, more preferably an aryl group having a carbon number of 6 to 12, and encompasses a structure where a plurality of aromatic rings are connected to each other through a single bond (for example, a biphenyl group and a terphenyl group).
The aralkyl group of R1a, R1b and R1c is preferably an aralkyl group having a carbon number of 6 to 20, more preferably an aralkyl group having a carbon number of 7 to 12. Specific examples of the aralkyl group of R1a, R1b and R1c include a benzyl group, a phenethyl group, a naphthylmethyl group, and a naphthylethyl group.
The heterocyclic group of R1a, R1b and R1c is preferably a heterocyclic group having a carbon number of 6 to 20, more preferably a heterocyclic group having a carbon number of 6 to 12. Specific examples of the heterocyclic group of R1a, R1b and R1c include a pyridyl group, a pyrazyl group, a tetrahydrofuranyl group, a tetrahydropyranyl group, a tetrahydrothiophene group, a piperidyl group, a piperazyl group, a furanyl group, a pyranyl group, and a chromanyl group.
The alkyl group, cycloalkyl group, aryl group, aralkyl group, alkoxy group, acyl group and heterocyclic group of R1a, R1b and R1c may further have a substituent.
Examples of the substituent which the alkyl group of R1a, R1b and R1c may further have include a cycloalkyl group, an aryl group, an amino group, an amido group, a ureido group, a urethane group, a hydroxy group, a carboxy group, a halogen atom, an alkoxy group, an aralkyloxy group, a thioether group, an acyl group, an acyloxy group, an alkoxycarbonyl group, a cyano group, and a nitro group.
Examples of the substituent which the cycloalkyl group of R1a, R1b and R1c may further have include an alkyl group and the groups recited above as specific examples of the substituent which the alkyl group may further have.
Incidentally, each of the carbon number of the alkyl group and the carbon number of the substituent which the cycloalkyl group may further have is preferably from 1 to 8.
Examples of the substituent which the aryl group, aralkyl group and heterocyclic group of R1a, R1b and R1c may further have include a nitro group, a halogen atom such as fluorine atom, a carboxyl group, a hydroxyl group, an amino group, a cyano group, an alkyl group (preferably having a carbon number of 1 to 15), an alkoxy group (preferably having a carbon number of 1 to 15), a cycloalkyl group (preferably having a carbon number of 3 to 15), an aryl group (preferably having a carbon number of 6 to 14), an alkoxycarbonyl group (preferably having a carbon number of 2 to 7), an acyl group (preferably having a carbon number of 2 to 12), and an alkoxycarbonyloxy group (preferably having a carbon number of 2 to 7).
At least two of R1a, R1b and R1c may combine with each other to form a ring.
In the case where at least two of R1a, R1b and R1c combine with each other to form a ring, examples of the ring formed include a cyclopentane ring, a cyclohexane ring, an adamantane ring, a norbornene ring, and a norbornane ring, with a cyclopentane ring and a cyclohexane ring being preferred. The carbon constituting such a ring (the carbon contributing to ring formation) may be a carbonyl carbon or may be replaced by a heteroatom such as oxygen atom and nitrogen. These rings may have a substituent, and examples of the substituent which the ring may have include the groups recited above as specific examples of the substituent which the alkyl group, cycloalkyl group, aryl group, aralkyl group, alkoxy group, acyl group and heterocyclic group of R1a, R1b and R1c may further have.
In the case where all of R1a, R1b and R1c combine with each other to form a ring, examples of the ring formed include an adamantane ring, a norbornane ring, a norbornene ring, a bicyclo[2,2,2]octane ring, and a bicyclo[3,1,1]heptane ring. Among these, an adamantane ring is preferred. The carbon constituting such a ring (the carbon contributing to ring formation) may be a carbonyl carbon or may be replaced by a heteroatom such as oxygen atom and nitrogen. These rings may have a substituent, and examples of the substituent which the ring may have include an alkyl group and the groups recited above as specific examples of the substituent which the alkyl group may further have.
From the standpoint that the glass transition temperature of the resin (P) can be raised and the resolution can be enhanced, each of R1a, R1b and R1c is independently preferably an alkyl group or a cycloalkyl group, more preferably an alkyl group.
Specific preferred examples of the partial structure represented by the following formula (b-1) in formula (1) are illustrated below, but the present invention is not limited thereto.




In the formula, * indicates a bond connected to the carbon atom to which R3 in formula (1) is bonded.
In specific examples illustrated below, * indicates a bond connected to the carbon atom to which R3 in formula (1) is bonded.




The alkyl group of R2 may have a substituent and may be linear or branched, and the alkyl group is preferably an alkyl group having a carbon number of 1 to 30, more preferably an alkyl group having a carbon number of 1 to 20. Specific examples of the alkyl group of R2 include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, a tert-butyl group, a neopentyl group, a hexyl group, a 2-ethylhexyl group, an octyl group, and a dodecyl group. The alkyl group of R2 is preferably a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a sec-butyl group, a tert-butyl group or a neopentyl group.
The cycloalkyl group of R2 may have a substituent and may be monocyclic or polycyclic, and the cycloalkyl group is preferably a cycloalkyl group having a carbon number of 3 to 30, more preferably a cycloalkyl group having a carbon number of 3 to 20. Specific examples of the cycloalkyl group of R2 include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a 1-adamantyl group, a 2-adamantyl group, a 1-norbornyl group, a 2-norbornyl group, a bornyl group, an isobornyl group, a 4-tetracyclo[6.2.1.13,6.02,7]dodecyl group, a 8-tricyclo[5.2.1.02,6]decyl group, and a 2-bicyclo[2.2.1]heptyl group. Among these, a cyclopentyl group, a cyclohexyl group, a 2-adamantyl group, a 8-tricyclo[5.2.1.02,6]decyl group and a 2-bicyclo[2.2.1]heptyl group are preferred.
Examples of the substituent which the alkyl group of R2 may have include a cycloalkyl group, an aryl group, a heterocyclic group, an alkoxy group, an alkoxycarbonyl group, an aryloxy group, an acyl group, and a halogen atom (e.g., fluorine atom, chlorine atom).
Specific examples and preferred examples of the cycloalkyl group as a substituent which the alkyl group of R2 may have are the same as specific examples and preferred examples recited above for the cycloalkyl group of R2.
Examples of the substituent which the cycloalkyl group of R2 may have include an alkyl group, an aryl group, a heterocyclic group, an alkoxy group, an aryloxy group, an acyloxy group, and a halogen atom (e.g., fluorine atom, chlorine atom).
Specific examples and preferred examples of the alkyl group as a substituent which the cycloalkyl group of R2 may have are the same as specific examples and preferred examples recited above for the alkyl group of R2.
Examples of the aryl group as a substituent which the alkyl group or cycloalkyl group of R2 may have are the same as those recited above for the aryl group of R1a, R1b and R1c.
The heterocyclic group of R2 is preferably a heterocyclic group having a carbon number of 6 to 20, more preferably a heterocyclic group having a carbon number of 6 to 12. Specific examples of the heterocyclic group of R2 include a pyridyl group, a pyrazyl group, a tetrahydrofuranyl group, a tetrahydropyranyl group, a tetrahydrothiophene group, a piperidyl group, a piperazyl group, a furanyl group, a pyranyl group, and a chromanyl group.
Examples of the alkyl group moiety of the alkoxy group or alkoxycarbonyl group as a substituent which the alkyl group or cycloalkyl group of R2 may have include those recited above for the alkyl group of R2. This alkoxy group is preferably a methoxy group, an ethoxy group, an n-propoxy group or an n-butoxy group.
Examples of the aryl group moiety of the aryloxy group as a substituent which the alkyl group or cycloalkyl group of R2 may have include those recited above for the aryl group.
The acyl group as a substituent which the alkyl group or cycloalkyl group of R2 may have includes, for example, a linear or branched acyloxy group having a carbon number of 2 to 12, such as acetyl group, propionyl group, n-butanoyl group, i-butanoyl group, n-heptanoyl group, 2-methylbutanoyl group, 1-methylbutanoyl group and tert-heptanoyl group.
At least one of R1a, R1b and R1c may combine with R2 to form a ring, and the ring may have a substituent. It is preferred to form a 5- or 6-membered ring, more preferably a tetrahydrofuranyl ring or a tetrahydropyranyl ring.
Specific examples of the group represented by R2 are illustrated below, but the present invention is not limited thereto. In specific examples illustrated below, * indicates a bond connected to the oxygen atom in formula (1).




The alkyl group of R3 is preferably an alkyl group having a carbon number of 1 to 10, more preferably an alkyl group having a carbon number of 1 to 5, still more preferably an alkyl group having a carbon number of 1 to 3, yet still more preferably an alkyl group having a carbon number of 1 or 2 (that is, a methyl group or an ethyl group). Specific examples of the alkyl group of R3 include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, and a tert-butyl group.
R3 is preferably a hydrogen atom or an alkyl group having a carbon number of 1 to 5, more preferably a hydrogen atom or an alkyl group having a carbon number of 1 to 3, still more preferably a hydrogen atom or a methyl group, yet still more preferably a hydrogen atom.
The repeating unit represented by formula (1) is preferably a repeating unit represented by any one of the following formulae (1-1) to (1-4), more preferably a repeating unit represented by any one of the following formulae (1-1) to (1-3), still more preferably a repeating unit represented by formula (1-1) or (1-3), yet still more preferably a repeating unit represented by the following formula (1-1).




In formulae (1-1) to (1-4), R′, R1a, R1b, R1c, R2 and R3 have the same meanings as R′, R1a, R1b, R1c, R2 and R3 in formula (1), respectively.
At least two of R1a, R1b and R1c may combine with each other to form a ring, or at least one of R1a, R1b and R1c may combine with R2 to form a ring.
From the standpoint of more unfailingly realizing high contrast (high γ value) and more reliably achieving enhancement of the resolution and sensitivity at the formation of a fine isolated pattern as well as formation of a rectangular pattern profile, the content of the repeating unit represented by formula (1), (1-1), (1-2), (1-3) or (1-4) in the resin (P) (in the case of containing a plurality of kinds, the total thereof) is preferably 10 mol % or more, more preferably 14 mol % or more, based on all repeating units in the resin (P).
The upper limit is not particularly limited, but from the standpoint of ensuring the content of the later-described repeating unit represented by formula (A) and more unfailingly achieving enhancement of the resolution and sensitivity at the formation of a fine isolated pattern as well as formation of a rectangular pattern profile, the content is preferably 85 mol % or less, more preferably 80 mol % or less.
Specific examples of the repeating unit represented by formula (1), (1-1), (1-2), (1-3) or (1-4) are illustrated below, but the present invention is not limited thereto.
In specific examples, Xa represents a hydrogen atom, CH3, CF3 or CH2OH.
















The resin (P) contains a repeating unit having a phenolic hydroxyl group, represented by the following formula (A):




In the formula, each of R21, R22 and R23 independently represents a hydrogen atom, an alkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group, provided that R22 may combine with Ar2 to form a ring and in this case, R22 represents a single bond or an alkylene group.
X2 represents a single bond, —COO— or —CONR30—, wherein R30 represents a hydrogen atom or an alkyl group.
L2 represents a single bond or an alkylene group.
Ar2 represents an (n+1)-valent aromatic ring group and in the case of combining with R22 to form a ring, Ar2 represents an (n+2)-valent aromatic ring group.
n represents an integer of 1 to 4.
Specific examples of the alkyl group, cycloalkyl group, halogen atom and alkoxycarbonyl group of R21, R22 and R23 in formula (A) and the substituent which may be substituted on these groups are the same as specific examples recited above for respective groups represented by R′ and L1 in formula (1).
Ar2 represents an (n+1)-valent aromatic ring group. The divalent aromatic ring group when n is 1 may have a substituent, and preferred examples of the divalent aromatic ring group include an arylene group having a carbon number of 6 to 18, such as phenylene group, tolylene group, naphthylene group and anthracenylene group, and an aromatic ring group containing a heterocyclic ring such as thiophene, furan, pyrrole, benzothiophene, benzofuran, benzopyrrole, triazine, imidazole, benzimidazole, triazole, thiadiazole and thiazole.
Specific examples of the (n+1)-valent aromatic ring group when n is an integer of 2 or more include the groups formed by removing arbitrary (n−1) hydrogen atoms from the above-described specific examples of the divalent aromatic ring group.
The (n+1)-valent aromatic ring group may further have a substituent.
Examples of the substituent may be substituted on the above-described alkyl group, cycloalkyl group, alkoxycarbonyl group, alkylene group and (n+1)-valent aromatic ring group include the alkyl group described for R′ and L1 in formula (1), an alkoxy group such as methoxy group, ethoxy group, hydroxyethoxy group, propoxy group, hydroxypropoxy group and butoxy group, and an aryl group such as phenyl group.
Examples of the alkyl group of R30 in —CONR30— (R30 represents a hydrogen atom or an alkyl group) represented by X2 are the same as those of the alkyl group of R21 to R23.
X2 is preferably a single bond, —COO— or —CONH—, more preferably a single bond or —COO—.
The alkylene group of L2 is preferably an alkylene group having a carbon number of 1 to 8, such as methylene group, ethylene group, propylene group, butylene group, hexylene group and octylene group, which may have a substituent.
Ar2 is preferably an aromatic ring group having a carbon number of 6 to 18, which may have a substituent, more preferably a benzene ring group, a naphthalene ring group or a biphenylene ring group.
This repeating unit preferably has a hydroxystyrene structure, that is, Ar2 is preferably a benzene ring group.
Specific examples of the repeating unit represented by formula (A) are illustrated below, but the present invention is not limited thereto. In the formulae, a represents 1 or 2.






















The repeating unit represented by formula (A) is preferably a repeating unit represented by the following formula (A1) or (A2):




In formula (A2), R43 has the same meaning as R43 in formula (A).
The resin (P) may contain two or more kinds of repeating units represented by formula (A).
From the standpoint of more unfailingly achieving high resolution, high sensitivity, low PEB temperature dependency, high dry etching resistance and good pattern profile, the content of the repeating unit represented by formula (A) (in the case of containing a plurality of kinds, the total thereof) in the resin (P) is preferably from 10 to 75 mol %, more preferably from 15 to 70 mol %, still more preferably from 20 to 65 mol %, based on all repeating units in the resin (P).
The resin (P) may contain a repeating unit having a group capable of decomposing by the action of an acid (hereinafter, sometimes referred to as “acid-decomposable group”), in addition to the repeating unit represented by formula (1).
The preferred acid-decomposable group used in combination includes a tertiary alkyl carboxylate, a secondary benzyl carboxylate, an acetal-protected phenolic hydroxyl group, a tert-butoxy carbonyl group-protected or tertiary ether-protected phenolic hydroxy group, an acetal-protected alcoholic hydroxyl group, and a tert-butoxy carbonyl group-protected or tertiary ether-protected alcoholic hydroxyl group, and these may be mixed and used. Incidentally, specific preferred examples of the acid-decomposable group include those described in JP-A-2010-217884.
As for the acid-decomposable group-containing repeating unit other than the repeated unit represented by formula (1), one kind may be used or two or more kinds may be used in combination.
The content of the acid-decomposable group-containing repeating unit other than the repeated unit represented by formula (1) (in the case of containing a plurality of kinds, the total thereof) is preferably from 1 to 30 mol %, more preferably from 3 to 25 mol %, still more preferably from 5 to 20 mol %, based on all repeating units in the resin (P).
The resin (P) may further contain a repeating unit represented by the following formula (4):




R41 represents a hydrogen atom or a methyl group. L41 represents a single bond or a divalent linking group. L42 represents a divalent linking group. S represents a structural moiety capable of decomposing upon irradiation with an actinic ray or radiation to generate an acid on the side chain.
Specific examples of the repeating unit represented by formula (4) are illustrated below, but the present invention is not limited thereto.














































































































































The content of the repeating unit represented by formula (4) in the resin (P) is preferably from 1 to 40 mol %, more preferably from 2 to 30 mol %, still more preferably from 5 to 25 mol %, based on all repeating units in the resin (P).
It is also preferred that the resin (P) further contains the following repeating units as other repeating units.
(Repeating Unit Having a Polar Group)
The resin (P) may contain a repeating unit having a polar group, other than the repeating unit represented by formula (A).
By containing a repeating unit having a polar group, for example, the sensitivity of the composition containing the resin can be enhanced. The repeating unit having a polar group is preferably a non-acid-decomposable repeating unit (that is, has no acid-decomposable group).
The “polar group” which can be contained in the repeating unit having a polar group includes, for example, the following (1) to (4). In the following, the “electronegativity” means a Pauling's value.

    (1) A functional group containing a structure where an oxygen atom and an atom with the electronegativity difference from oxygen atom being 1.1 or more are bonded through a single bond


Examples of this polar group include a group containing a structure represented by O—H, such as hydroxy group.

    (2) A functional group containing a structure where a nitrogen atom and an atom with the electronegativity difference from nitrogen atom being 0.6 or more are bonded through a single bond


Examples of this polar group include a group containing a structure represented by N—H, such as amino group.

    (3) A functional group containing a structure where two atoms differing in the electronegativity by 0.5 or more are bonded through a double bond or a triple bond


Examples of this polar group include a group containing a structure represented by C≡N, C═O, N═O, S═O or C═N.

    (4) A functional group having an ionic moiety


Examples of this polar group include a group having a moiety represented by N+ or S+.
Specific examples of the partial structure which can be contained in the “polar group” are illustrated below.




This polar group is preferably selected from a hydroxyl group, a cyano group, a lactone group, a sultone group, a carboxylic acid group, a sulfonic acid group, an amide group, a sulfonamide group, an ammonium group, a sulfonium group, a carbonate group (—O—CO—O—) (for example, a cyclic carbonic acid ester structure), and a group formed by combining two or more thereof, more preferably an alcoholic hydroxy group, a cyano group, a lactone group, a sultone group or a cyanolactone structure-containing group.
When a repeating unit having an alcoholic hydroxy group is further incorporated into the resin, the exposure latitude (EL) of a composition containing the resin can be more enhanced.
When a repeating unit having a cyano group is further incorporated into the resin, the sensitivity of a composition containing the resin can be more enhanced.
When a repeating unit having a lactone group is further incorporated into the resin, the dissolution contrast for an organic solvent-containing developer can be more enhanced. Also, a composition containing the resin can be more improved in the dry etching resistance, coatability and adherence to substrate.
When a repeating unit having a group containing a cyano group-containing lactone structure is further incorporated into the resin, the dissolution contrast for an organic solvent-containing developer can be more enhanced. Also, a composition containing the resin can be more improved in the sensitivity, dry etching resistance, coatability and adherence to substrate. In addition, functions attributable to a cyano group and a lactone group, respectively, can be undertaken by a single repeating unit and the latitude in designing the resin can be more broadened.
The repeating unit having a polar group may be a repeating unit having a lactone structure as the polar group.
The repeating unit having a lactone structure is preferably a repeating unit represented by the following formula (AII):




In formula (AII), Rb0 has the same meaning as Rb0 in formula (2).
Ab represents a single bond, an alkylene group, a divalent linking group having a monocyclic or polycyclic cycloalkyl structure, an ether bond, an ester bond, a carbonyl group, or a divalent linking group formed by a combination thereof. Ab is preferably a single bond or a divalent linking group represented by -Ab1-CO2—.
Ab1 is a linear or branched alkylene group or a monocyclic or polycyclic cycloalkylene group and is preferably a methylene group, an ethylene group, a cyclohexylene group, an adamantylene group or a norbornylene group.
V represents a group having a lactone structure.
As the group having a lactone structure, any group may be used as long as it has a lactone structure, but a 5- to 7-membered ring lactone structure is preferred, and a 5- to 7-membered ring lactone structure to which another ring structure is fused to form a bicyclo or spiro structure is preferred. It is more preferred to contain a repeating unit having a lactone structure represented by any one of the following formulae (LC1-1) to (LC1-17). The lactone structure may be bonded directly to the main chain. Preferred lactone structures are (LC1-1), (LC1-4), (LC1-5), (LC1-6), (LC1-8), (LC1-13) and (LC1-14).










The lactone structure moiety may or may not have a substituent (Rb2). Preferred examples of the substituent (Rb2) include an alkyl group having a carbon number of 1 to 8, a monovalent cycloalkyl group having a carbon number of 4 to 7, an alkoxy group having a carbon number of 1 to 8, an alkoxycarbonyl group having a carbon number of 2 to 8, a carboxyl group, a halogen atom, a hydroxyl group, a cyano group, and an acid-decomposable group. Among these, an alkyl group having a carbon number of 1 to 4, a cyano group and an acid-decomposable group are more preferred. n2 represents an integer of 0 to 4. When n2 is 2 or more, each substituent (Rb2) may be the same as or different from every other substituents (Rb2) and also, the plurality of substituents (Rb2) may combine with each other to form a ring.
The repeating unit having a lactone structure usually has an optical isomer, and any optical isomer may be used. One optical isomer may be used alone, or a mixture of a plurality of optical isomers may be used. In the case of mainly using one optical isomer, the optical purity (ee) thereof is preferably 90% or more, more preferably 95% or more.
The resin (P) may or may not contain a repeating unit having a lactone structure, but in the case of containing a repeating unit having a lactone structure, the content of the repeating unit in the resin (P) is preferably from 1 to 40 mol %, more preferably from 5 to 30 mol %, still more preferably from 8 to 20 mol %, based on all repeating units.
Specific examples of the lactone structure-containing repeating unit in the resin (P) are illustrated below, but the present invention is not limited thereto. In the formulae, Rx represents H, CH3, CH2OH or CF3.







The sultone group which may be contained in the resin (P) is preferably a sultone group represented by the following formula (SL-1) or (SL-2). In the formulae, Rb2 and n2 have the same meanings as in formulae (LC1-1) to (LC1-17).




The sultone group-containing repeating unit which may be contained in the resin (P) is preferably a repeating unit where the lactone group in the above-described lactone group-containing repeating unit is replaced by a sultone group.
In the case where the polar group contained in the repeating unit having a polar group is an alcoholic hydroxy group, the repeating unit is preferably represented by at least one formula selected from the group consisting of the following formulae (I-1H) to (I-10H), more preferably represented by at least one formula selected from the group consisting of the following formulae (I-1H) to (I-3H), still more preferably represented by the following formula (I-1H).







In the formulae, each Ra independently represents a hydrogen atom, an alkyl group or a group represented by —CH2—O—Ra2, wherein Ra2 represents a hydrogen atom, an alkyl group or an acyl group.
R1 represents an (n+1)-valent organic group.
R2 represents, when m≧2, each independently represents, a single bond or an (n+1)-valent organic group.
W represents a methylene group, an oxygen atom or a sulfur atom.
n and m represent an integer of 1 or more. Incidentally, in the case where R2 in formula (I-2H), (I-3H) or (I-8H) represents a single bond, n is 1.
1 represents an integer of 0 or more.
L1 represents a linking group represented by —COO—, —OCO—, —CONH—, —O—, —Ar—, —SO3— or —SO2NH—, wherein Ar represents a divalent aromatic ring group.
Each R independently represents a hydrogen atom or an alkyl group.
R0 represents a hydrogen atom or an organic group.
L3 represents an (m+2)-valent linking group.
RL represents, when m≧2 each independently represents, an (n+1) -valent linking group.
RS represents, when p≧2 each independently represents, a substituent. In the case of p≧2, the plurality of RS may combine with each other to form a ring.
p represents an integer of 0 to 3.
Ra represents a hydrogen atom, an alkyl group or a group represented by —CH2—O—Ra2. Ra is preferably a hydrogen atom or an alkyl group having a carbon number of 1 to 10, more preferably a hydrogen atom or a methyl group.
W represents a methylene group, an oxygen atom or a sulfur atom. W is preferably a methylene group or an oxygen atom.
R1 represents an (n+1)-valent organic group. R1 is preferably a non-aromatic hydrocarbon group. In this case, R1 may be a chain hydrocarbon group or an alicyclic hydrocarbon group. R1 is more preferably an alicyclic hydrocarbon group.
R2 represents a single bond or an (n+1)-valent organic group. R2 is preferably a single bond or a non-aromatic hydrocarbon group. In this case, R2 may be a chain hydrocarbon group or an alicyclic hydrocarbon group.
In the case where R1 and/or R2 are a chain hydrocarbon group, the chain hydrocarbon group may be linear or branched. The carbon number of the chain hydrocarbon group is preferably from 1 to 8. For example, when R1 and/or R2 are an alkylene group, R1 and/or R2 are preferably a methylene group, an ethylene group, an n-propylene group, an isopropylene group, an n-butylene group, an isobutylene group or a sec-butylene group.
In the case where R1 and/or R2 are an alicyclic hydrocarbon group, the alicyclic hydrocarbon group may be monocyclic or polycyclic. The alicyclic hydrocarbon group has, for example, a monocyclo, bicyclo, tricyclo or tetracyclo structure. The carbon number of the alicyclic hydrocarbon group is usually 5 or more, preferably from 6 to 30, more preferably from 7 to 25.
The alicyclic hydrocarbon group includes, for example, those having a partial structure illustrated below. Each of these partial structures may have a substituent. Also, in each of these partial structures, the methylene group (—CH2—) may be substituted with an oxygen atom (—O—), a sulfur atom (—S—), a carbonyl group [—C(═O)—], a sulfonyl group [—S(═O)2—], a sulfinyl group [—S(═O)—] or an imino group [—N(R)—] (wherein R is a hydrogen atom or an alkyl group).







For example, when R1 and/or R2 are a cycloalkylene group, R1 and/or R2 are preferably an adamantylene group, a noradamantylene group, a decahydronaphthylene group, a tricyclodecanylene group, a tetracyclododecanylene group, a norbornylene group, a cyclopentylene group, a cyclohexylene group, a cycloheptylene group, a cyclooctylene group, a cyclodecanylene group or a cyclododecanylene group, more preferably an adamantylene group, a norbornylene group, a cyclohexylene group, a cyclopentylene group, a tetracyclododecanylene group or a tricyclodecanylene group.
The non-aromatic hydrocarbon group of R1 and/or R2 may have a substituent. Examples of this substituent include an alkyl group having a carbon number of 1 to 4, a halogen atom, a hydroxy group, an alkoxy group having a carbon number of 1 to 4, a carboxy group, and an alkoxycarbonyl group having a carbon number of 2 to 6. These alkyl group, alkoxy group and alkoxycarbonyl group may further have a substituent, and examples of the substituent include a hydroxy group, a halogen atom, and an alkoxy group.
L1 represents a linking group represented by —COO—, —OCO—, —CONH—, —O—, —Ar—, —SO3— or —SO2NH—, wherein Ar represents a divalent aromatic ring group. L1 is preferably a linking group represented by —COO—, —CONH— or —Ar—, more preferably a linking group represented by —COO— or —CONH—.
R represents a hydrogen atom or an alkyl group. The alkyl group may be a linear alkyl group or a branched-chain alkyl group. The carbon number of this alkyl group is preferably from 1 to 6, more preferably from 1 to 3. R is preferably a hydrogen atom or a methyl group, more preferably a hydrogen atom.
R0 represents a hydrogen atom or an organic group. Examples of the organic group include an alkyl group, a cycloalkyl group, an aryl group, an alkynyl group and an alkenyl group. R0 is preferably a hydrogen atom or an alkyl group, more preferably a hydrogen atom or a methyl group.
L3 represents an (m+2)-valent linking group. That is, L3 represents a trivalent or higher valent linking group. Examples of such a linking group include corresponding groups in specific examples illustrated later.
RL represents an (n+1)-valent linking group. That is, RL represents a divalent or higher valent linking group. Examples of such a linking group include an alkylene group, a cycloalkylene group, and corresponding groups in specific examples illustrated later. RL may combine with another RL or with RS to form a ring structure.
RS represents a substituent. Examples of the substituent include an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an alkoxy group, an acyloxy group, an alkoxycarbonyl group, and a halogen atom.
n is an integer of 1 or more. n is preferably an integer of 1 to 3, more preferably 1 or 2. Also, when n is an integer of 2 or more, the dissolution contrast for an organic solvent-containing developer can be more enhanced and in turn, the limiting resolution and roughness characteristics can be more improved.
m is an integer of 1 or more. m is preferably an integer of 1 to 3, more preferably 1 or 2.
1 an integer of 0 or more. l is preferably 0 or 1.
p is an integer of 0 to 3.
When a repeating unit having a group capable of decomposing by the action of an acid to produce an alcoholic hydroxy group and a repeating unit represented by at least one formula selected from the group consisting of formulae (I-1H) to (I-10H) are used in combination, for example, thanks to suppression of acid diffusion by the alcoholic hydroxy group and increase in the sensitivity brought about by the group capable of decomposing by the action of an acid to produce an alcoholic hydroxy group, the exposure latitude (EL) can be improved without deteriorating other performances.
In the case of having an alcoholic hydroxy group, the content of this repeating unit is preferably from 1 to 60 mol %, more preferably from 3 to 50 mol %, still more preferably from 5 to 40 mol %, based on all repeating units in the resin (P).
Specific examples of the repeating unit represented by any one of formulae (I-1H) to (I-10H) are illustrated below. In specific examples, Ra has the same meaning as in formulae (I-1H) to (I-10H).










In the case where the polar group contained in the repeating unit having a polar group is an alcoholic hydroxy group or a cyano group, one preferred embodiment of the repeating unit is a repeating unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group. At this time, the repeating unit preferably has no acid-decomposable group. The alicyclic hydrocarbon structure in the alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group is preferably an adamantyl group, a diamantyl group or a norbornane group. The alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group is preferably a partial structure represented by the following formulae (VIIa) to (VIIc). Thanks to this repeating unit, adherence to substrate and affinity for developer are enhanced.




In formulae (VIIa) to (VIIc), each of R2c to R4c independently represents a hydrogen atom, a hydroxyl group or a cyano group, provided that at least one of R2c to R4c represents a hydroxyl group. A structure where one or two members of R2c to R4c are a hydroxyl group with the remaining being a hydrogen atom is preferred. In formula (VIIa), it is more preferred that two members of R2c to R4c are a hydroxyl group and the remaining is a hydrogen atom.
The repeating unit having a partial structure represented by formulae (VIIa) to (VIIc) includes repeating units represented by the following formulae (AIIa) to (AIIc):




In formulae (AIIa) to (AIIc), R1c represents a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.
R2c to R4c have the same meanings as R2c to R4c in formulae (VIIa) to (VIIc).
The resin (P) may or may not contain a repeating unit having a hydroxyl group or a cyano group, but in the case of containing a repeating unit having a hydroxyl group or a cyano group, the content thereof is preferably from 1 to 60 mol %, more preferably from 3 to 50 mol %, still more preferably from 5 to 40 mol %, based on all repeating units in the resin (P).
Specific examples of the repeating unit having a hydroxyl group or a cyano group are illustrated below, but the present invention is not limited thereto.







It is also one of particularly preferred embodiments that the polar group which can be contained in the repeating unit having a polar group is an acidic group. Preferred acidic groups include a phenolic hydroxyl group, a carboxylic acid group, a sulfonic acid group, a fluorinated alcohol group (such as hexafluoroisopropanol group), a sulfonamide group, a sulfonylimide group, an (alkylsulfonyl)(alkylcarbonyl)methylene group, an (alkylsulfonyl)(alkylcarbonyl)imide group, a bis(alkylcarbonyl)methylene group, a bis(alkylcarbonyl)imide group, a bis(alkylsulfonyl)methylene group, a bis(alkylsulfonyl)imide group, a tris(alkylcarbonyl)methylene group, and a tris(alkylsulfonyl)methylene group. Among others, the repeating unit having a polar group is preferably a repeating unit having a carboxyl group. By virtue of containing a repeating unit having an acidic group, the resolution increases in usage of forming contact holes. As the repeating unit having an acidic group, all of a repeating unit where an acidic group is directly bonded to the main chain of the resin, such as repeating unit by an acrylic acid or a methacrylic acid, a repeating unit where an acidic group is bonded to the main chain of the resin through a linking group, and a repeating unit where an acidic group is introduced into the polymer chain terminal by using an acidic group-containing polymerization initiator or chain transfer agent at the polymerization, are preferred. In particular, a repeating unit by an acrylic acid or a methacrylic acid is preferred.
The acidic group which can be contained in the repeating unit having a polar group may or may not contain an aromatic ring. In the case where the repeating unit having a polar group contains an acidic group, the content of the repeating unit having an acidic group is preferably 30 mol % or less, more preferably 20 mol % or less, based on all repeating units in the resin (P). In the case where the resin (P) contains a repeating unit having an acidic group, the content of the repeating unit having an acidic group in the resin (P) is usually 1 mol % or more.
Specific examples of the repeating unit having an acidic group are illustrated below, but the present invention is not limited thereto.
In specific examples, Rx represents H, CH3, CH2OH or CF3.




Also, the polar group that can be contained in the repeating unit having a polar group may be a carbonate group such as cyclic carbonic acid ester structure, and it is preferred that the resin (P) contains a repeating unit having a cyclic carbonic acid ester structure.
The repeating unit having a cyclic carbonic acid ester structure is preferably a repeating unit represented by the following formula (A-1):




In formula (A-1), RA1 represents a hydrogen atom or an alkyl group.
RA2 represents, when n is 2 or more, each independently represents, a substituent.
A represents a single bond or a divalent linking group.
Z represents an atomic group necessary for forming a monocyclic or polycyclic structure together with the group represented by —O—C(═O)—O— in the formula.
n represents an integer of 0 or more.
Formula (A-1) is described in detail below.
The alkyl group represented by RA1 may have a substituent such as fluorine atom.
RA1 preferably represents a hydrogen atom, a methyl group or a trifluoromethyl group, more preferably represents a methyl group.
The substituent represented by RA2 is, for example, an alkyl group, a cycloalkyl group, a hydroxyl group, an alkoxy group, an amino group or an alkoxycarbonyl group and is preferably an alkyl group having a carbon number of 1 to 5, and examples thereof include a linear alkyl group having a carbon number of 1 to 5, such as methyl group, ethyl group, propyl group and butyl group, and a branched alkyl group having a carbon number of 3 to 5, such as isopropyl group, isobutyl group and tert-butyl group. The alkyl may have a substituent such as hydroxyl group.
n represents the number of substituents and is an integer of 0 or more. For example, n is preferably from 0 to 4, more preferably 0.
The divalent linking group represented by A includes, for example, an alkylene group, a cycloalkylene group, an ester bond, an amido bond, an ether bond, a urethane bond, a urea bond, and a combination thereof. The alkylene group is preferably an alkylene group having a carbon number of 1 to 10, more preferably an alkylene group having a carbon number of 1 to 5, and examples thereof include a methylene group, an ethylene group, and a propylene group.
In one embodiment of the present invention, A is preferably a single bond or an alkylene group.
The monocyclic ring containing —O—C(═O)—O— represented by Z includes, for example, a 5- to 7-membered ring where in the cyclic carbonic acid ester represented by the following formula (a), nA is from 2 to 4, and is preferably a 5- or 6-membered ring (nA is 2 or 3), more preferably a 5-membered ring (nA is 2).
The polycyclic ring containing —O—C(═O)—O— represented by Z includes, for example, a structure where the cyclic carbonic acid ester represented by the following formula (a) forms a condensed ring together with one other ring structure or two or more other ring structures, and a structure where a spiro ring is formed. The “other ring structure” capable of forming a condensed ring or a spiro ring may be an alicyclic hydrocarbon group or an aromatic hydrocarbon group or may be a heterocyclic ring.




The monomer corresponding to the repeating unit represented by formula (A-1) can be synthesized by a conventionally known method described, for example, in Tetrahedron Letters, Vol. 27, No. 32, page 3741 (1986), and Organic Letters, Vol. 4, No. 15, page 2561 (2002).
In the resin (P), one of repeating units represented by formula (A-1) may be contained alone, or two or more thereof may be contained.
Specific examples of the repeating unit having a cyclic carbonic acid ester structure are illustrated below, but the present invention is not limited thereto.
In specific examples, RA1 has the same meaning as RA1 in formula (A-1).










As for the repeating unit having a cyclic carbonic acid ester structure, the resin (P) may contain one repeating unit alone or may contain two or more repeating units.
In the case where the resin (P) contains a repeating unit having a cyclic carbonic acid ester structure, the content of the repeating unit having a cyclic carbonic acid ester structure is preferably from 5 to 60 mol %, more preferably from 5 to 55 mol %, still more preferably from 10 to 50 mol %, based on all repeating units in the resin (P).
Repeating Unit Having a Plurality of Aromatic Rings
The resin (P) may contain a repeating unit having a plurality of aromatic rings represented by the following formula (c1):




In formula (c1), R3 represents a hydrogen atom, an alkyl group, a halogen atom, a cyano group or a nitro group;
Y represents a single bond or a divalent linking group;
Z represents a single bond or a divalent linking group;
Ar represents an aromatic ring group; and
p represents an integer of 1 or more.
The alkyl group as R3 may be either linear or branched, and examples thereof include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, an n-butyl group, a sec-butyl group, a tert-butyl group, an n-pentyl group, an n-hexyl group, an n-heptyl group, an n-octyl group, an n-nonyl group, an n-decanyl group, and an i-butyl group. The alkyl group may further have a substituent, and preferred examples of the substituent include an alkoxy group, a hydroxyl group, a halogen atom, and a nitro group. Among others, the alkyl group having a substituent is preferably, for example, a CF3 group, an alkyloxycarbonylmethyl group, an alkylcarbonyloxymethyl group, a hydroxymethyl group or an alkoxymethyl group.
The halogen atom as R3 includes fluorine atom, chlorine atom, bromine atom and iodine atom, with fluorine atom being preferred.
Y represents a single bond or a divalent linking group, and examples of the divalent linking group include an ether group (oxygen atom), a thioether group (sulfur atom), an alkylene group, an arylene group, a carbonyl group, a sulfide group, a sulfone group, —COO—, —CONH—, —SO2NH—, —CF2—, —CF2CF2—, —OCF2O—, —CF2OCF2—, —SS—, —CH2SO2CH2—, —CH2COCH2—, —COCF2CO—, —COCO—, —OCOO—, —OSO2O—, an amino group (nitrogen atom), an acyl group, an alkylsulfonyl group, —CH═CH—, —C≡C—, an aminocarbonylamino group, an aminosulfonylamino group, and a group formed by a combination thereof. Y preferably has a carbon number of 15 or less, more preferably a carbon number of 10 or less.
Y is preferably a single bond, a —COO— group, a —COS— group or a —CONH— group, more preferably a —COO— group or a —CONH— group, still more preferably a —COO— group.
Z represents a single bond or a divalent linking group, and examples of the divalent linking group include an ether group (oxygen atom), a thioether group (sulfur atom), an alkylene group, an arylene group, a carbonyl group, a sulfide group, a sulfone group, —COO—, —CONH—, —SO2NH—, an amino group (nitrogen atom), an acyl group, an alkylsulfonyl group, —CH═CH—, an aminocarbonylamino group, an aminosulfonylamino group, and a group formed by a combination thereof.
Z is preferably a single bond, an ether group, a carbonyl group or —COO—, more preferably a single bond or an ether group, still more preferably a single bond.
Ar represents an aromatic ring group, and specific examples thereof include a phenyl group, a naphthyl group, an anthracenyl group, a phenanthrenyl group, a quinolinyl group, a furanyl group, a thiophenyl group, a fluorenyl-9-on-yl group, an anthraquinolinyl group, a phenanthraquinolinyl group, and a pyrrole group, with a phenyl group being preferred. Such an aromatic ring group may further have a substituent, and preferred examples of the substituent include an alkyl group, an alkoxy group, a hydroxy group, a halogen atom, a nitro group, an acyl group, an acyloxy group, an acylamino group, a sulfonylamino group, an aryl group such as phenyl group, an aryloxy group, an arylcarbonyl group, and a heterocyclic residue. Among these, from the standpoint of preventing deterioration of the exposure latitude or pattern profile due to out-of-band light, a phenyl group is preferred.
p is an integer of 1 or more and is preferably an integer of 1 to 3.
The repeating unit having a plurality of aromatic rings is more preferably a repeating unit represented by the following formula (c2):




In formula (c2), R3 represents a hydrogen atom or an alkyl group. Preferred examples of the alkyl group as R3 are the same as in formula (c1).
Here, as concerns the extreme-ultraviolet (EUV) exposure, leakage light (out-of-band light) generated in the ultraviolet region at a wavelength of 100 to 400 nm worsens the surface roughness, as a result, the resolution and LWR performance tend to be impaired due to bridge between patterns or disconnection of pattern.
However, the aromatic ring in the repeating unit having a plurality of aromatic rings functions as an internal filter capable of absorbing the above-described out-of-band light. Accordingly, in view of high resolution and low LWR, the resin (P) preferably contains the repeating unit having a plurality of aromatic rings.
In this connection, from the standpoint of obtaining high resolution, the repeating unit having a plurality of aromatic rings is preferably free from a phenolic hydroxyl group (a hydroxyl group bonded directly on an aromatic ring).
Specific examples of the repeating unit having a plurality of aromatic rings are illustrated below, but the present invention is not limited thereto.






















The resin (P) may or may not contain the repeating unit having a plurality of aromatic rings, but in the case containing the repeating unit having a plurality of aromatic rings, the content thereof is preferably from 1 to 30 mol %, more preferably from 1 to 20 mol %, still more preferably from 1 to 15 mol %, based on all repeating units in the resin (P). As for the repeating unit having a plurality of aromatic rings contained in the resin (P), two or more kinds of repeating units may be contained in combination.
The resin (P) for use in the present invention may appropriately contain a repeating unit other than the above-described repeating unit. As an example of such a repeating unit, the resin may contain a repeating unit having an alicyclic hydrocarbon structure free from a polar group (for example, the above-described acid group, a hydroxyl group or a cyano group) and not exhibiting acid decomposability. Thanks to this configuration, the solubility of the resin at the development using an organic solvent-containing developer can be appropriately adjusted. Such a repeating unit includes a repeating unit represented by formula (IV):




In formula (IV), R5 represents a hydrocarbon group having at least one cyclic structure and having no polar group.
Ra represents a hydrogen atom, an alkyl group or a —CH2—O—Ra2 group, wherein Ra2 represents a hydrogen atom, an alkyl group or an acyl group. Ra is preferably a hydrogen atom, a methyl group, a hydroxymethyl group or a trifluoromethyl group, more preferably a hydrogen atom or a methyl group.
The cyclic structure contained in R5 includes a monocyclic hydrocarbon group and a polycyclic hydrocarbon group. Examples of the monocyclic hydrocarbon group include a cycloalkyl group having a carbon number of 3 to 12, such as cyclopentyl group, cyclohexyl group, cycloheptyl group and cyclooctyl group, and a cycloalkenyl group having a carbon number of 3 to 12, such as cyclohexenyl group. The monocyclic hydrocarbon group is preferably a monocyclic hydrocarbon group having a carbon number of 3 to 7, more preferably a cyclopentyl group or a cyclohexyl group.
The polycyclic hydrocarbon group includes a ring assembly hydrocarbon group and a crosslinked cyclic hydrocarbon group. Examples of the ring assembly hydrocarbon group include a bicyclohexyl group and a perhydronaphthalenyl group. Examples of the crosslinked cyclic hydrocarbon ring include a bicyclic hydrocarbon ring such as pinane ring, bornane ring, norpinane ring, norbornane ring and bicyclooctane ring (e.g., bicyclo[2.2.2]octane ring, bicyclo[3.2.1]octane ring), a tricyclic hydrocarbon ring such as homobledane ring, adamantane ring, tricyclo[5.2.1.02,6]decane ring and tricyclo[4.3.1.12,5]undecane ring, and a tetracyclic hydrocarbon ring such as tetracyclo[4.4.0.12,5.17,10]dodecane ring and perhydro-1,4-methano-5,8-methanonaphthalene ring. The crosslinked cyclic hydrocarbon ring also includes a condensed cyclic hydrocarbon ring, for example, a condensed ring formed by fusing a plurality of 5- to 8-membered cycloalkane rings, such as perhydronaphthalene (decalin) ring, perhydroanthracene ring, perhydrophenanthrene ring, perhydroacenaphthene ring, perhydrofluorene ring, perhydroindene ring and perhydrophenalene ring.
Preferred examples of the crosslinked cyclic hydrocarbon ring include a norbornyl group, an adamantyl group, a bicyclooctanyl group, and a tricyclo[5,2,1,02,6]decanyl group. Among these crosslinked cyclic hydrocarbon rings, a norbornyl group and an adamantyl group are more preferred.
Such an alicyclic hydrocarbon group may have a substituent, and preferred examples of the substituent include a halogen atom, an alkyl group, a hydroxyl group with a hydrogen atom being substituted for, and an amino group with a hydrogen atom being substituted for. The halogen atom is preferably bromine atom, chlorine atom or fluorine atom, and the alkyl group is preferably a methyl group, an ethyl group, a butyl group or a tert-butyl group. This alkyl group may further have a substituent, and the substituent which may be further substituted on the alkyl group includes a halogen atom, an alkyl group, a hydroxyl group with a hydrogen atom being substituted for, and an amino group with a hydrogen atom being substituted for.
Examples of the substituent for the hydrogen atom include an alkyl group, a cycloalkyl group, an aralkyl group, a substituted methyl group, a substituted ethyl group, an alkoxycarbonyl group, and an aralkyloxycarbonyl group. The alkyl group is preferably an alkyl group having a carbon number of 1 to 4; the substituted methyl group is preferably a methoxymethyl group, a methoxythiomethyl group, a benzyloxymethyl group, a tert-butoxymethyl group or a 2-methoxyethoxymethyl group; the substituted ethyl group is preferably a 1-ethoxyethyl group or a 1-methyl-1-methoxyethyl group; the acyl group is preferably an aliphatic acyl group having a carbon number of 1 to 6, such as formyl group, acetyl group, propionyl group, butyryl group, isobutyryl group, valeryl group and pivaloyl group; and the alkoxycarbonyl group includes, for example, an alkoxycarbonyl group having a carbon number of 1 to 4.
The resin (P) may or may not contain a repeating unit having an alicyclic hydrocarbon structure free from a polar group and not exhibiting acid decomposability, but in the case of containing this repeating unit, the content thereof is preferably from 1 to 20 mol %, more preferably from 5 to 15 mol %, based on all repeating units in the resin (P).
Specific examples of the repeating unit having an alicyclic hydrocarbon structure free from a polar group and not exhibiting acid decomposability are illustrated below, but the present invention is not limited thereto. In the formulae, Ra represents H, CH3, CH2OH or CF3.







From the standpoint of elevating Tg, improving dry etching resistance and producing an effect such as internal filter for out-of-band-light, the resin (P) may contain the following monomer component.




In the resin (P) for use in the composition of the present invention, the molar ratio of respective repeating structural units contained is appropriately set so as to control the dry etching resistance of resist, the suitability for standard developer, the adherence to substrate, the resist profile, and performances generally required of the resist, such as resolution, heat resistance and sensitivity.
The form of the resin (P) for use in the present invention may be any of random type, block type, comb type and star type.
The resin (P) can be synthesized, for example, by radical, cationic or anionic polymerization of unsaturated monomers corresponding to respective structures. It is also possible to obtain the target resin by polymerizing unsaturated monomers corresponding to precursors of respective structures and then performing a polymer reaction.
Examples of the general synthesis method include a batch polymerization method of dissolving unsaturated monomers and a polymerization initiator in a solvent and heating the solution, thereby effecting the polymerization, and a dropping polymerization method of adding dropwise a solution containing unsaturated monomers and a polymerization initiator to a heated solvent over 1 to 10 hours. A dropping polymerization method is preferred.
The solvent used for the polymerization includes, for example, a solvent which can be used when preparing the later-described actinic ray-sensitive or radiation-sensitive resin composition, and it is more preferred to perform the polymerization by using the same solvent as the solvent used in the composition of the present invention. By the use of this solvent, production of particles during storage can be suppressed.
The polymerization reaction is preferably performed in an inert gas atmosphere such as nitrogen or argon. As for the polymerization initiator, the polymerization is started using a commercially available radical initiator (e.g., azo-based initiator, peroxide). The radical initiator is preferably an azo-based initiator, and an azo-based initiator having an ester group, a cyano group or a carboxyl group is preferred. Preferred examples of the initiator include azobisisobutyronitrile, azobisdimethylvaleronitrile, and dimethyl 2,2′-azobis(2-methylpropionate). If desired, the polymerization may be performed in the presence of a chain transfer agent (e.g., alkylmercaptan).
The concentration during the reaction is from 5 to 70 mass %, preferably from 10 to 50 mass %, and the reaction temperature is usually from 10 to 150° C., preferably from 30 to 120° C., more preferably from 40 to 100° C.
The reaction time is usually from 1 to 48 hours, preferably from 1 to 24 hours, more preferably from 1 to 12 hours.
After the completion of reaction, the reaction solution is allowed to cool to room temperature and purified. In the purification, a conventional method, for example, a liquid-liquid extraction method of applying water washing or combining an appropriate solvent to remove residual monomers or oligomer components, a purification method in a solution state, such as ultrafiltration of removing by extraction only polymers having a molecular weight lower than a specific molecular weight, a reprecipitation method of adding dropwise the resin solution to a poor solvent to solidify the resin in the poor solvent and thereby remove residual monomers or the like, or a purification method in a solid state, such as washing of the resin slurry with a poor solvent after separation of the slurry by filtration, may be applied. For example, the resin is precipitated as a solid by contacting the reaction solution with a solvent in which the resin is sparingly soluble or insoluble (poor solvent) and which is in a volumetric amount of 10 times or less, preferably from 10 to 5 times, the reaction solution.
The solvent used at the operation of precipitation or reprecipitation from the polymer solution (precipitation or reprecipitation solvent) may be sufficient if it is a poor solvent to the polymer, and the solvent which can be used may be appropriately selected from a hydrocarbon, a halogenated hydrocarbon, a nitro compound, an ether, a ketone, an ester, a carbonate, an alcohol, a carboxylic acid, water, a mixed solvent containing such a solvent, and the like, according to the kind of the polymer. Among these solvents, a solvent containing at least an alcohol (particularly, methanol or the like) or water is preferred as the precipitation or reprecipitation solvent.
The amount of the precipitation or reprecipitation solvent used may be appropriately selected by taking into consideration the efficiency, yield and the like, but in general, the amount used is from 100 to 10,000 parts by mass, preferably from 200 to 2,000 parts by mass, more preferably from 300 to 1,000 parts by mass, per 100 parts by mass of the polymer solution.
The temperature at the precipitation or reprecipitation may be appropriately selected by taking into consideration the efficiency or operability but is usually on the order of 0 to 50° C., preferably in the vicinity of room temperature (for example, approximately from 20 to 35° C.). The precipitation or reprecipitation operation may be performed using a commonly employed mixing vessel such as stirring tank, by a known method such as batch system and continuous system.
The precipitated or reprecipitated polymer is usually subjected to commonly employed solid-liquid separation such as filtration and centrifugation, then dried and used. The filtration is performed using a solvent-resistant filter element preferably under pressure. The drying is performed under atmospheric pressure or reduced pressure (preferably under reduced pressure) at a temperature of approximately from 30 to 100° C., preferably on the order of 30 to 50° C.
Incidentally, after the resin is once precipitated and separated, the resin may be again dissolved in a solvent and then put into contact with a solvent in which the resin is sparingly soluble or insoluble. That is, there may be used a method comprising, after the completion of radical polymerization reaction, bringing the polymer into contact with a solvent in which the polymer is sparingly soluble or insoluble, to precipitate a resin (step a), separating the resin from the solution (step b), anew dissolving the resin in a solvent to prepare a resin solution A (step c), bringing the resin solution A into contact with a solvent in which the resin is sparingly soluble or insoluble and which is in a volumetric amount of less than 10 times (preferably 5 times or less) the resin solution A, to precipitate a resin solid (step d), and separating the precipitated resin (step e).
The polymerization reaction is preferably performed in an inert gas atmosphere such as nitrogen or argon. As for the polymerization initiator, the polymerization is started using a commercially available radical initiator (e.g., azo-based initiator, peroxide). The radical initiator is preferably an azo-based initiator, and an azo-based initiator having an ester group, a cyano group or a carboxyl group is preferred. Preferred examples of the initiator include azobisisobutyronitrile, azobisdimethylvaleronitrile, and dimethyl 2,2′-azobis(2-methylpropionate). The initiator is added additionally or in parts, if desired. After the completion of reaction, the reaction product is poured in a solvent, and the desired polymer is collected, for example, by a method for powder or solid recovery. The concentration during the reaction is from 5 to 50 mass %, preferably from 10 to 30 mass %, and the reaction temperature is usually from 10 to 150° C., preferably from 30 to 120° C., more preferably from 60 to 100° C.
The molecular weight of the resin (P) according to the present invention is not particularly limited, but the weight average molecular weight is preferably from 1,000 to 100,000, more preferably from 1,500 to 60,000, still more preferably from 2,000 to 30,000. When the weight average molecular weight is from 1,000 to 100,000, the heat resistance and dry etching resistance can be kept from deterioration and at the same time, the film-forming property can be prevented from becoming poor due to impairment of developability or increase in the viscosity. Here, the weight average molecular weight of the resin indicates a molecular weight in terms of polystyrene measured by GPC (carrier: THF (tetrahydrofuran) or N-methyl-2-pyrrolidone (NMP)).
The polydispersity (Mw/Mn) is preferably from 1.00 to 5.00, more preferably from 1.03 to 3.50, still more preferably from 1.05 to 2.50. As the molecular weight distribution is narrower, the resolution and resist profile are more excellent, the side wall of the resist pattern is smoother, and the roughness is more improved.
As for the resin (P) used in the present invention, one kind of a resin may be used alone, or two or more kinds of resins may be used in combination. The content of the resin (P) is preferably from 20 to 99 mass %, more preferably from 30 to 89 mass %, still more preferably from 40 to 79 mass %, based on the total solid content in the actinic ray-sensitive or radiation-sensitive resin composition of the present invention. (In this specification, mass ratio is equal to weight ratio.)
Specific examples of the resin (P) are illustrated below, but the present invention is not limited thereto. Moreover, compositional ratio of each repeating unit as for the following polymer structure is molar ratio.

















































[2] (B) Resin Capable of Decomposing by the Action of an Acid to Change in the Solubility for a Developer, which is Different from the Resin (P)

The actinic ray-sensitive or radiation-sensitive resin composition of the present invention may contain a resin capable of decomposing by the action of an acid to change in the solubility for a developer, which is different from the resin (P) (hereinafter, the resin is sometimes referred to as “resin (B)”).
The resin (B) is a resin having a structure where a polar group is protected by a leaving group capable of decomposing and leaving by the action of an acid (hereinafter, sometimes referred to as “acid-decomposable group”).
The resin (B) preferably contains a repeating unit having an acid-decomposable group.
Examples of the polar group include a carboxyl group, a phenolic hydroxyl group, an alcoholic hydroxyl group, a sulfonic acid group, and a thiol group.
Examples of the group capable of leaving by the action of an acid include —C(R36)(R37)(R38), —C(R36)(R37)(OR39), —C(═O)—O—C(R36)(R37)(R38), —C(R01)(R02)(OR39), and —C(R01)(R02)—C(═O)—O—C(R36)(R37)(R38).
In the formulae above, each of R36 to R39 independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group, and R36 and R37 may combine with each other to form a ring. Each of R01 and R02 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group.
The resin (B) can be synthesized by a conventional method (for example, radical polymerization).
The weight average molecular weight of the resin (B) is preferably from 1,000 to 200,000, more preferably from 2,000 to 20,000, still more preferably from 3,000 to 15,000, yet still more preferably from 3,000 to 10,000, in terms of polystyrene as measured by the GPC method. When the weight average molecular weight is from 1,000 to 200,000, the heat resistance and dry etching resistance can be kept from deterioration and at the same time, the film-forming property can be prevented from becoming poor due to impairment of developability or increase in the viscosity.
The polydispersity (molecular weight distribution) is usually from 1 to 3, preferably from 1 to 2.6, more preferably from 1 to 2, still more preferably from 1.4 to 1.7. As the molecular weight distribution is narrower, the resolution and resist profile are more excellent, the side wall of the resist pattern is smoother, and the roughness is more improved.
As for the resin (B), two or more kinds of resins may be used in combination.
The actinic ray-sensitive or radiation-sensitive resin composition of the present invention may or may not contain the resin (B), but in the case of containing the resin (B), the content thereof is usually from 1 to 50 mass %, preferably from 1 to 30 mass %, more preferably from 1 to 15 mass %, based on the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition.
Examples of the resin (B) include those described in paragraphs [0059] to [0169] of JP-A-2010-217884 and paragraphs [0214] to [0594] of Japanese Patent Application No. 2011-217048.
[3] Compound Capable of Generating an Acid Upon Irradiation with an Actinic Ray or Radiation
The composition of the present invention preferably contains a compound capable of generating an acid upon irradiation with an actinic ray or radiation (hereinafter, sometimes referred to as “acid generator”).
The acid generator is not particularly limited as long as it is a known acid generator, but a compound capable of generating an organic acid, for example, at least any one of a sulfonic acid, a bis(alkylsulfonyl)imide and a tris(alkylsulfonyl)methide, upon irradiation with an actinic ray or radiation is preferred.
More preferred compounds include compounds represented by the following formulae (ZI), (ZII) and (ZIII):




In formula (ZI), each of R201, R202 and R203 independently represents an organic group.
The carbon number of the organic group as R201, R202 and R203 is generally from 1 to 30, preferably from 1 to 20.
Two members out of R201 to R203 may combine to form a ring structure, and the ring may contain therein an oxygen atom, a sulfur atom, an ester bond, an amide bond or a carbonyl group. The group formed by combining two members out of R201 to R203 includes an alkylene group (e.g., butylenes group, pentylene group).
Z− represents a non-nucleophilic anion (an anion having an extremely low ability of causing a nucleophilic reaction).
Examples of the non-nucleophilic anion include a sulfonate anion (such as aliphatic sulfonate anion, aromatic sulfonate anion and camphorsulfonate anion), a carboxylate anion (such as aliphatic carboxylate anion, aromatic carboxylate anion and aralkylcarboxylate anion), a sulfonylimide anion, a bis(alkylsulfonyl)imide anion, and a tris(alkylsulfonyl)methide anion.
The aliphatic moiety in the aliphatic sulfonate anion and aliphatic carboxylate anion may be an alkyl group or a cycloalkyl group but is preferably a linear or branched alkyl group having a carbon number of 1 to 30 or a cycloalkyl group having a carbon number of 3 to 30.
The aromatic group in the aromatic sulfonate anion and aromatic carboxylate anion is preferably an aryl group having a carbon number of 6 to 14, and examples thereof include a phenyl group, a tolyl group and a naphthyl group.
The alkyl group, cycloalkyl group and aryl group above may have a substituent. Specific examples of the substituent include a nitro group, a halogen atom such as fluorine atom, a carboxyl group, a hydroxyl group, an amino group, a cyano group, an alkoxy group (preferably having a carbon number of 1 to 15), a cycloalkyl group (preferably having a carbon number of 3 to 15), an aryl group (preferably having a carbon number of 6 to 14), an alkoxycarbonyl group (preferably having a carbon number of 2 to 7), an acyl group (preferably having a carbon number of 2 to 12), an alkoxycarbonyloxy group (preferably having a carbon number of 2 to 7), an alkylthio group (preferably having a carbon number of 1 to 15), an alkylsulfonyl group (preferably having a carbon number of 1 to 15), an alkyliminosulfonyl group (preferably having a carbon number of 2 to 15), an aryloxysulfonyl group (preferably having a carbon number of 6 to 20), an alkylaryloxysulfonyl group (preferably having a carbon number of 7 to 20), a cycloalkylaryloxysulfonyl group (preferably having a carbon number of 10 to 20), an alkyloxyalkyloxy group (preferably having a carbon number of 5 to 20), and a cycloalkylalkyloxyalkyloxy group (preferably having a carbon number of 8 to 20). The aryl group or ring structure, which each group has, may further have an alkyl group (preferably having a carbon number of 1 to 15) as a substituent.
The aralkyl group in the aralkylcarboxylate anion is preferably an aralkyl group having a carbon number of 7 to 12, and examples thereof include a benzyl group, a phenethyl group, a naphthylmethyl group, a naphthylethyl group and a naphthylbutyl group.
Examples of the sulfonylimide anion include saccharin anion.
The alkyl group in the bis(alkylsulfonyl)imide anion and tris(alkylsulfonyl)methide anion is preferably an alkyl group having a carbon number of 1 to 5, and examples of the substituent on this alkyl group include a halogen atom, a halogen atom-substituted alkyl group, an alkoxy group, an alkylthio group, an alkyloxysulfonyl group, an aryloxysulfonyl group, and a cycloalkylaryloxysulfonyl group, with a fluorine atom and a fluorine atom-substituted alkyl group being preferred.
Also, the alkyl groups in the bis(alkylsulfonyl)imide anion may combine with each other to form a ring structure. In this case, the acid strength is increased.
Other examples of the non-nucleophilic anion include fluorinated phosphorus (e.g., PF6−), fluorinated boron (e.g., BF4−), and fluorinated antimony (e.g., SbF6−).
The non-nucleophilic anion is preferably an aliphatic sulfonate anion substituted with a fluorine atom at least at the α-position of the sulfonic acid, an aromatic sulfonate anion substituted with a fluorine atom or a fluorine atom-containing group, a bis(alkylsulfonyl)imide anion in which the alkyl group is substituted with a fluorine atom, or a tris(alkylsulfonyl)methide anion in which the alkyl group is substituted with a fluorine atom. The non-nucleophilic anion is more preferably a perfluoroaliphatic sulfonate anion (preferably having a carbon number of 4 to 8) or a fluorine atom-containing benzenesulfonate anion, still more preferably nonafluorobutanesulfonate anion, perfluorooctanesulfonate anion, pentafluorobenzenesulfonate anion or 3,5-bis(trifluoromethyl)benzenesulfonate anion.
As regards the acid strength, the pKa of the acid generated is preferably −1 or less for enhancing the sensitivity.
An anion represented by the following formula (AN1) is also a preferred embodiment of the non-nucleophilic anion:




In the formula, each Xf independently represents a fluorine atom or an alkyl group substituted with at least one fluorine atom.
Each of R1 and R2 independently represents a hydrogen atom, a fluorine atom or an alkyl group, and when a plurality of R1s or R2s are present, each R1 or R2 may be the same as or different from every other R1 or R2.
L represents a divalent linking group, and when a plurality of L's are present, each L may be the same as or different from every other L.
A represents a cyclic organic group.
x represents an integer of 1 to 20, y represents an integer of 0 to 10, and z represents an integer of 0 to 10.
Formula (AN1) is described in more detail.
The alkyl group in the fluorine atom-substituted alkyl group of Xf is preferably an alkyl group having a carbon number of 1 to 10, more preferably from 1 to 4. Also, the fluorine atom-substituted alkyl group of Xf is preferably a perfluoroalkyl group.
Xf is preferably a fluorine atom or a perfluoroalkyl group having a carbon number of 1 to 4. Specific examples of Xf include a fluorine atom, CF3, C2F5, C3F7, C4F9, CH2CF3, CH2CH2CF3, CH2C2F5, CH2CH2C2F5, CH2C3F7, CH2CH2C3F7, CH2C4F9 and CH2CH2C4F9, with a fluorine atom and CF3 being preferred. In particular, it is preferred that both Xf's are a fluorine atom.
The alkyl group of R1 and R2 may have a substituent (preferably a fluorine atom) and is preferably an alkyl group having a carbon number of 1 to 4, more preferably a perfluoroalkyl group having a carbon number of 1 to 4. Specific examples of the alkyl group having a substituent of R1 and R2 include CF3, C2F5, C3F7, C4F9, C5F11, C6F13, C7F15, C8F17, CH2CF3, CH2CH2CF3, CH2C2F5, CH2CH2C2F5, CH2C3F7, CH2CH2C3F7, CH2C4F9 and CH2CH2C4F9, with CF3 being preferred.
Each of R1 and R2 is preferably a fluorine atom or CF3.
x is preferably from 1 to 10, more preferably from 1 to 5.
y is preferably from 0 to 4, more preferably 0.
z is preferably from 0 to 5, more preferably from 0 to 3.
The divalent linking group of L is not particularly limited and includes, for example, —COO—, —OCO—, —CO—, —O—, —S—, —SO—, —SO2—, an alkylene group, a cycloalkylene group, an alkenylene group, and a linking group formed by combining a plurality thereof. A linking group having a total carbon number of 12 or less is preferred. Among these, —COO—, —OCO—, —CO— and —O— are preferred, and —COO—, —OCO— are more preferred.
The cyclic organic group of A is not particularly limited as long as it has a cyclic structure, and examples thereof include an alicyclic group, an aryl group and a heterocyclic group (including not only those having aromaticity but also those having no aromaticity).
The alicyclic group may be monocyclic or polycyclic and is preferably a monocyclic cycloalkyl group such as cyclopentyl group, cyclohexyl group and cyclooctyl group, or a polycyclic cycloalkyl group such as norbornyl group, tricyclodecanyl group, tetracyclodecanyl group, tetracyclododecanyl group and adamantyl group. Above all, an alicyclic group having a bulky structure with a carbon number of 7 or more, such as norbornyl group, tricyclodecanyl group, tetracyclodecanyl group, tetracyclododecanyl group and adamantyl group, is preferred from the standpoint that the diffusion in the film during heating after exposure can be suppressed and MEEF can be improved.
The aryl group includes a benzene ring, a naphthalene ring, a phenanthrene ring, and an anthracene ring.
The heterocyclic group includes those derived from a furan ring, a thiophene ring, a benzofuran ring, a benzothiophene ring, a dibenzofuran ring, a dibenzothiophene ring and a pyridine ring. Among these, heterocyclic groups derived from a furan ring, a thiophene ring and a pyridine ring are preferred.
The cyclic organic group also includes a lactone structure. Specific examples thereof include lactone structures represented by formulae (LC1-1) to (LC1-17) which may be contained in the resin (P).
The cyclic organic group may have a substituent, and examples of the substituent include an alkyl group (may be any of linear, branched or cyclic; preferably having a carbon number of 1 to 12), a cycloalkyl group (may be any of monocyclic, polycyclic or spirocyclic; preferably having a carbon number of 3 to 20), an aryl group (preferably having a carbon number of 6 to 14), a hydroxy group, an alkoxy group, an ester group, an amide group, a urethane group, a ureido group, a thioether group, a sulfonamido group, and a sulfonic acid ester group. Incidentally, the carbon constituting the cyclic organic group (the carbon contributing to ring formation) may be a carbonyl carbon.
Examples of the organic group of R201, R202 and R203 include an aryl group, an alkyl group, and a cycloalkyl group.
At least one of three members R201, R202 and R203 is preferably an aryl group, and it is more preferred that all of these three members are an aryl group. The aryl group may be a heteroaryl group such as indole residue and pyrrole residue, other than a phenyl group, a naphthyl group and the like. The alkyl group and cycloalkyl group of R201 to R203 may be preferably a linear or branched alkyl group having a carbon number of 1 to 10 and a cycloalkyl group having a carbon number of 3 to 10. More preferred examples of the alkyl group include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, and an n-butyl group. More preferred examples of the cycloalkyl group include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, and a cycloheptyl group. These groups may further have a substituent, and examples of the substituent include, but are not limited to, a nitro group, a halogen atom such as fluorine atom, a carboxyl group, a hydroxyl group, an amino group, a cyano group, an alkoxy group (preferably having a carbon number of 1 to 15), a cycloalkyl group (preferably having a carbon number of 3 to 15), an aryl group (preferably having a carbon number of 6 to 14), an alkoxycarbonyl group (preferably having a carbon number of 2 to 7), an acyl group (preferably having a carbon number of 2 to 12), and an alkoxycarbonyloxy group (preferably having a carbon number of 2 to 7).
In the case where two members out of R201 to R203 are combined to form a ring structure, the ring structure is preferably a structure represented by the following formula (A1):




In formula (A1), each of R1a to R13a independently represents a hydrogen atom or a substituent.
It is preferred that from one to three members out of R1a to R13a are not a hydrogen atom; and it is more preferred that any one of R9a to R13a is not a hydrogen atom.
Za represents a single bond or a divalent linking group.
X− has the same meaning as Z− in formula (ZI).
Specific examples of R1a to R13a when these are not a hydrogen atom include a halogen atom, a linear, branched or cyclic alkyl group, an alkenyl group, an alkynyl group, an aryl group, a heterocyclic group, a cyano group, a nitro group, a carboxyl group, an alkoxy group, an aryloxy group, a silyloxy group, a heterocyclic oxy group, an acyloxy group, a carbamoyloxy group, an alkoxycarbonyloxy group, an aryloxycarbonyloxy group, an amino group (including an anilino group), an ammonio group, an acylamino group, an aminocarbonylamino group, an alkoxycarbonylamino group, an aryloxycarbonylamino group, a sulfamoylamino group, an alkylsulfonylamino group, an arylsulfonylamino group, a mercapto group, an alkylthio group, an arylthio group, a heterocyclic thio group, a sulfamoyl group, a sulfo group, an alkylsulfinyl group, an arylsulfinyl group, an alkylsulfonyl group, an arylsulfonyl group, an acyl group, an aryloxycarbonyl group, an alkoxycarbonyl group, a carbamoyl group, an arylazo group, a heterocyclic azo group, an imido group, a phosphino group, a phosphinyl group, a phosphinyloxy group, a phosphinylamino group, a phosphono group, a silyl group, a hydrazino group, a ureido group, a boronic acid group (—B(OH)2), a phosphato group (—OPO(OH)2), a sulfato group (—OSO3H), and other known substituents.
In the case where R1a to R13a are not a hydrogen atom, each of R1a to R13a is preferably a linear, branched or cyclic alkyl group substituted with a hydroxyl group.
Examples of the divalent linking group of Za include an alkylene group, an arylene group, a carbonyl group, a sulfonyl group, a carbonyloxy group, a carbonylamino group, a sulfonylamide group, an ether bond, a thioether bond, an amino group, a disulfide group, —(CH2)n—CO—, —(CH2)n—SO2—, —CH═CH—, an aminocarbonylamino group, and an aminosulfonylamino group (n is an integer of 1 to 3).
Incidentally, when at least one of R201, R202 and R203 is not an aryl group, the preferred structure includes a cation structure such as compounds described in paragraphs—0046, 0047 and 0048 of JP-A-2004-233661 and paragraphs 0040 to 0046 of JP-A-2003-35948, compounds illustrated as formulae (I-1) to (I-70) in U.S. Patent Application Publication No. 200310224288A1, and compounds illustrated as formulae (IA-1) to (IA-54) and formulae (IB-1) to (IB-24) in U.S. Patent Application Publication No. 2003/0077540A1.
In formulae (ZII) and (ZIII), each of R204 to R207 independently represents an aryl group, an alkyl group or a cycloalkyl group.
The aryl group, alkyl group and cycloalkyl group of R204 to R207 are the same as the aryl group, alkyl group and cycloalkyl group of R201 to R203 in the compound (ZI).
The aryl group, alkyl group and cycloalkyl group of R204 to R207 may have a substituent. Examples of the substituent include those of the substituent which may be substituted on the aryl group, alkyl group and cycloalkyl group of R201 to R203 in the compound (ZI).
Z− represents a non-nucleophilic anion, and examples thereof are the same as those of the non-nucleophilic anion of Z− in formula (ZI).
The acid generator further includes compounds represented by the following formulae (ZIV), (ZV) and (ZVI):




In formulae (ZIV) to (ZVI), each of Ar3 and Ar4 independently represents an aryl group.
Each of R208, R209 and R210 independently represents an alkyl group, a cycloalkyl group or an aryl group.
A represents an alkylene group, an alkenylene group or an arylene group.
Specific examples of the aryl group of Ar3, Ar4, R208, R209 and R210 are the same as specific examples of the aryl group of R201, R202 and R203 in formula (ZI).
Specific examples of the alkyl group and cycloalkyl group of R208, R209 and R210 are the same as specific examples of the alkyl group and cycloalkyl group of R201, R202 and R203 in formula (ZI).
The alkylene group of A includes an alkylene group having a carbon number of 1 to 12 (e.g., methylene group, ethylene group, propylene group, isopropylene group, butylenes group, isobutylene group); the alkenylene group of A includes an alkenylene group having a carbon number of 2 to 12 (e.g., ethenylene group, propenylene group, butenylene group); and the arylene group of A includes an arylene group having a carbon number of 6 to 10 (e.g., phenylene group, tolylene group, naphthylene group).
Out of the acid generators, particularly preferred examples are illustrated below.


















































































One kind of an acid generator may be used alone, or two or more kinds of acid generators may be used in combination.
The content of the photoacid generator is preferably from 0.1 to 50 mass %, more preferably from 0.5 to 45 mass %, still more preferably from 1 to 40 mass %, based on the total solid content of the composition.
[4] Compound Capable of Decomposing by the Action of an Acid to Generate an Acid
The actinic ray-sensitive or radiation-sensitive resin composition of the present invention may further contain one compound or two or more compounds capable of decomposing by the action of an acid to generate an acid. The acid generated from the compound capable of decomposing by the action of an acid to generate an acid is preferably a sulfonic acid, a methide acid or an imide acid.
Examples of the compound capable of decomposing by the action of an acid to generate an acid which can be used in the present invention are illustrated below, but the present invention is not limited thereto.













As for the compound capable of decomposing by the action of an acid to generate an acid, one compound may be used alone, or two or more compounds may be used in combination.
Incidentally, the content of the compound capable of decomposing by the action of an acid to generate an acid is preferably from 0.1 to 40 mass %, more preferably from 0.5 to 30 mass %, still more preferably from 1.0 to 20 mass %, based on the total solid content of the actinic ray-sensitive or radiation-sensitive resin composition.
[5] Resist Solvent (Coating Solvent)
The solvent which can be used when preparing the composition is not particularly limited as long as it dissolves respective components, but examples thereof include an alkylene glycol monoalkyl ether carboxylate (e.g., propylene glycol monomethyl ether acetate (PGMEA; another name: 1-methoxy-2-acetoxypropane)), an alkylene glycol monoalkyl ether (e.g., propylene glycol monomethyl ether (PGME; 1-methoxy-2-propanol)), a lactic acid alkyl ester (e.g., ethyl lactate, methyl lactate), a cyclic lactone (e.g., γ-butyrolactone; preferably having a carbon number of 4 to 10), a chain or cyclic ketone (e.g., 2-heptanone, cyclohexanone; preferably having a carbon number of 4 to 10), an alkylene carbonate (e.g., ethylene carbonate, propylene carbonate), an alkyl carboxylate (preferably an alkyl acetate such as butyl acetate), and an alkyl alkoxyacetate (e.g., ethyl ethoxypropionate). Other examples of the solvent which can be used include solvents described in paragraph [0244] et seq. of U.S. Patent Application Publication No. 2008/0248425A1.
Among the solvents above, an alkylene glycol monoalkyl ether carboxylate and an alkylene glycol monoalkyl ether are preferred.
One of these solvents may be used alone, or two or more thereof may be mixed and used. In the case of mixing two or more solvents, it is preferred to mix a solvent having a hydroxyl group and a solvent having no hydroxyl group. The mass ratio between the solvent having a hydroxyl group and the solvent having no hydroxyl group is from 1/99 to 99/1, preferably from 10/90 to 90/10, more preferably from 20/80 to 60/40.
The solvent having a hydroxy group is preferably an alkylene glycol monoalkyl ether, and the solvent having no hydroxyl group is preferably an alkylene glycol monoalkyl ether carboxylate.
[6] Basic Compound
The actinic ray-sensitive or radiation-sensitive resin composition of the present invention may further contain a basic compound. The basic compound is preferably a compound having basicity stronger than that of phenol. The basic compound is preferably an organic basic compound, more preferably a nitrogen-containing basic compound.
The nitrogen-containing basic compound which can be used is not particularly limited, but, for example, compounds classified into the following (1) to (7) may be used.
(1) Compound Represented by Formula (BS-1):




In formula (BS-1), each R independently represents a hydrogen atom or an organic group, provided that at least one of three R is an organic group. The organic group is a linear or branched alkyl group, a monocyclic or polycyclic cycloalkyl group, an aryl group or an aralkyl group.
The carbon number of the alkyl group as R is not particularly limited but is usually from 1 to 20, preferably from 1 to 12.
The carbon number of the cycloalkyl group as R is not particularly limited but is usually from 3 to 20, preferably from 5 to 15.
The carbon number of the aryl group as R is not particularly limited but is usually from 6 to 20, preferably from 6 to 10. Specific examples thereof include a phenyl group and a naphthyl group.
The carbon number of the aralkyl group as R is not particularly limited but is usually from 7 to 20, preferably from 7 to 11. Specific examples thereof include a benzyl group.
In the alkyl group, cycloalkyl group, aryl group and aralkyl group as R, a hydrogen atom may be substituted for by a substituent. Examples of the substituent include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, a hydroxy group, a carboxy group, an alkoxy group, an aryloxy group, an alkylcarbonyloxy group, and an alkyloxycarbonyl group.
In the compound represented by formula (BS-1), it is preferred that at least two R are an organic group.
Specific examples of the compound represented by formula (BS-1) include tri-n-butylamine, tri-n-pentylamine, tri-n-octylamine, tri-n-decylamine, triisodecylamine, dicyclohexylmethylamine, tetradecylamine, pentadecylamine, hexadecylamine, octadecylamine, didecylamine, methyloctadecylamine, dimethylundecylamine, N,N-dimethyldodecylamine, methyldioctadecylamine, N,N-dibutylaniline, N,N-dihexylaniline, 2,6-diisopropylaniline, and 2,4,6-tri(tert-butyl)aniline.
Also, the preferred basic compound represented by formula (BS-1) includes a compound where at least one R is an alkyl group substituted with a hydrophilic group. Specific examples thereof include triethanolamine and N,N-dihydroxyethylaniline.
The alkyl group as R may have an oxygen atom in the alkyl chain. That is, an oxyalkylene chain may be formed. The oxyalkylene chain is preferably —CH2CH2O—. Specific examples thereof include tris(methoxyethoxyethyl)amine and compounds illustrated in column 3, line 60 et seq. of U.S. Pat. No. 6,040,112.
Out of basic compounds represented by formula (BS-1), examples of the compounds having a hydroxyl group, an oxygen atom or the like include the followings.




(2) Compound Having a Nitrogen-Containing Heterocyclic Structure

The nitrogen-containing heterocyclic ring may or may not have aromaticity, may contain a plurality of nitrogen atoms, and may further contain a heteroatom other than nitrogen. Specific examples of the compound include a compound having an imidazole structure (e.g., 2-phenylbenzimidazole, 2,4,5-triphenylimidazole), a compound having a piperidine structure [e.g., N-hydroxyethylpiperidine, bis(1,2,2,6,6-pentamethyl-4-piperidyl)sebacate], a compound having a pyridine structure (e.g., 4-dimethylaminopyridine), and a compound having an antipyrine structure (e.g., antipyrine, hydroxyantipyrine).
Preferred examples of the compound having a nitrogen-containing heterocyclic structure include guanidine, aminopyridine, aminoalkylpyridine, aminopyrrolidine, indazole, imidazole, pyrazole, pyrazine, pyrimidine, purine, imidazoline, pyrazoline, piperazine, aminomorpholine, and aminoalkylmorpholine. These compounds may further have a substituent.
Preferred examples of the substituent include an amino group, an aminoalkyl group, an alkylamino group, an aminoaryl group, an arylamino group, an alkyl group, an alkoxy group, an acyl group, an acyloxy group, an aryl group, an aryloxy group, a nitro group, a hydroxyl group, and a cyano group.
More preferred examples of the basic compound include imidazole, 2-methylimidazole, 4-methylimidazole, N-methylimidazole, 2-phenylimidazole, 4,5-diphenylimidazole, 2,4,5-triphenylimidazole, 2-aminopyridine, 3-aminopyridine, 4-aminopyridine, 2-dimethylaminopyridine, 4-dimethylaminopyridine, 2-diethylaminopyridine, 2-(aminomethyl)pyridine, 2-amino-3-methylpyridine, 2-amino-4-methylpyridine, 2-amino-5-methylpyridine, 2-amino-6-methylpyridine, 3-aminoethylpyridine, 4-aminoethylpyridine, 3-aminopyrrolidine, piperazine, N-(2-aminoethyl)piperazine, N-(2-aminoethyl)piperidine, 4-amino-2,2,6,6-tetramethylpiperidine, 4-piperidinopiperidine, 2-iminopiperidine, 1-(2-aminoethyl)pyrrolidine, pyrazole, 3-amino-5-methylpyrazole, 5-amino-3-methyl-1-p-tolylpyrazole, pyrazine, 2-(aminomethyl)-5-methylpyrazine, pyrimidine, 2,4-diaminopyrimidine, 4,6-dihydroxypyrimidine, 2-pyrazoline, 3-pyrazoline, N-aminomorpholine, and N-(2-aminoethyl)morpholine.
A compound having two or more ring structures is also suitably used. Specific examples thereof include 1,5-diazabicyclo[4.3.0]non-5-ene and 1,8-diazabicyclo[5.4.0]undec-7-ene.
(3) Phenoxy Group-containing Amine Compound
The phenoxy group-containing amine compound is a compound where the alkyl group contained in an amine compound has a phenoxy group at the terminal opposite the N atom. The phenoxy group may have a substituent such as alkyl group, alkoxy group, halogen atom, cyano group, nitro group, carboxy group, carboxylic acid ester group, sulfonic acid ester group, aryl group, aralkyl group, acyloxy group and aryloxy group.
The compound preferably has at least one oxyalkylene chain between the phenoxy group and the nitrogen atom. The number of oxyalkylene chains per molecule is preferably from 3 to 9, more preferably from 4 to 6. Among oxyalkylene chains, —CH2CH2O— is preferred.
Specific examples of the compound include 2-[2-{2-(2,2-dimethoxy-phenoxyethoxy)ethyl}-bis-(2-methoxyethyl)]-amine and Compounds (C1-1) to (C3-3) illustrated in paragraph [0066] of U.S. Patent Application Publication No. 2007/0224539A1.
The phenoxy group-containing amine compound is obtained, for example, by reacting a primary or secondary amine having a phenoxy group with a haloalkyl ether under heating and after adding an aqueous solution of a strong base such as sodium hydroxide, potassium hydroxide and tetraalkylammonium, extracting the reaction product with an organic solvent such as ethyl acetate and chloroform. The phenoxy group-containing amine compound can be also obtained by reacting a primary or secondary amine with a haloalkyl ether having a phenoxy group at the terminal under heating and after adding an aqueous solution of a strong base such as sodium hydroxide, potassium hydroxide and tetraalkylammonium, extracting the reaction product with an organic solvent such as ethyl acetate and chloroform.
(4) Ammonium Salt
An ammonium salt may be also appropriately used as the basic compound.
The cation of the ammonium salt is preferably a tetraalkylammonium cation substituted with an alkyl group having a carbon number of 1 to 18, more preferably a tetramethylammonium cation, a tetraethylammonium cation, a tetra(n-butyl)ammonium cation, a tetra(n-heptyl)ammonium cation, a tetra(n-octyl)ammonium cation, a dimethyl-hexadecylammonium cation, a benzyltrimethyl cation or the like, still more preferably a tetra(n-butyl)ammonium cation.
The anion of the ammonium salt includes, for example, hydroxide, carboxylate, halide, sulfonate, borate and phosphate. Among these, hydroxide and carboxylate are preferred.
The halide is preferably chloride, bromide or iodide.
The sulfonate is preferably an organic sulfonate having a carbon number of 1 to 20. Examples of the organic sulfonate include an alkylsulfonate having a carbon number of 1 to 20, and an arylsulfonate.
The alkyl group contained in the alkylsulfonate may have a substituent, and examples of the substituent include a fluorine atom, a chlorine atom, a bromine atom, an alkoxy group, an acyl group, and an aryl group. Specific examples of the alkylsulfonate include methanesulfonate, ethanesulfonate, butanesulfonate, hexanesulfonate, octanesulfonate, benzylsulfonate, trifluoromethanesulfonate, pentafluoroethanesulfonate, and nonafluorobutanesulfonate.
Examples of the aryl group contained in the arylsulfonate include a phenyl group, a naphthyl group, and an anthryl group. Such an aryl group may have a substituent. The substituent is preferably, for example, a linear or branched alkyl group having a carbon number of 1 to 6, or a cycloalkyl group having a carbon number of 3 to 6. Specific preferred examples thereof include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an i-butyl group, a tert-butyl group, an n-hexyl group and a cyclohexyl group. Other substituents include an alkoxy group having a carbon number of 1 to 6, a halogen atom, cyano, nitro, an acyl group, and an acyloxy group.
The carboxylate may be either an aliphatic carboxylate or an aromatic carboxylate, and examples thereof include acetate, lactate, pyruvate, trifluoroacetate, adamantanecarboxylate, hydroxyadamantanecarboxylate, benzoate, naphthoate, salicylate, phthalate, and phenolate. Among these, benzoate, naphthoate, phenolate and the like are preferred, and benzoate is most preferred.
In this case, the ammonium salt is preferably, for example, tetra(n-butyl)ammonium benzoate or tetra(n-butyl)ammonium phenolate.
In the case of a hydroxide, the ammonium salt is preferably a tetraalkylammonium hydroxide having a carbon number of 1 to 8 (e.g., tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetra-(n-butyl)ammonium hydroxide).
(5) (PA) Compound Having a Proton Acceptor Functional Group and Undergoing Decomposition Upon Irradiation with an Actinic Ray or Radiation to Generate a Compound Reduced in or Deprived of the Proton Acceptor Property or Changed from Proton Acceptor-functioning to Acidic
The composition of the present invention may further contain, as a basic compound, a compound having a proton acceptor functional group and undergoing decomposition upon irradiation with an actinic ray or radiation to generate a compound reduced in or deprived of the proton acceptor property or changed from proton acceptor-functioning to acidic [hereinafter, sometimes referred to as “compound (PA)”].
The proton acceptor functional group is a functional group having a group or electron capable of electrostatically interacting with a proton and means, for example, a functional group having a macrocyclic structure such as cyclic polyether, or a functional group containing a nitrogen atom having an unshared electron pair not contributing to π-conjugation. The nitrogen atom having an unshared electron pair not contributing to π-conjugation is, for example, a nitrogen atom having a partial structure represented by the following formulae:




unshared electron pair

Preferred examples of the partial structure for the proton acceptor functional group include a crown ether structure, an aza-crown ether structure, a primary to tertiary amine structure, a pyridine structure, an imidazole structure, and a pyrazine structure.
The compound (PA) decomposes upon irradiation with an actinic ray or radiation to generate a compound reduced in or deprived of the proton acceptor property or changed from proton acceptor-functioning to acidic. The “reduced in or deprived of the proton acceptor property or changed from proton acceptor-functioning to acidic” as used herein indicates a change in the proton acceptor property due to addition of a proton to the proton acceptor functional group and specifically means that when a proton adduct is produced from the proton acceptor functional group-containing compound (PA) and a proton, the equilibrium constant in the chemical equilibrium decreases.
Specific examples of the compound (PA) are illustrated below, but the present invention is not limited thereto.



































































In the present invention, a compound (PA) other than the compound capable of generating a compound represented by formula (PA-1) can be also appropriately selected. For example, a compound that is an ionic compound and has a proton acceptor site in the cation moiety may be used. More specifically, examples of such a compound include a compound represented by the following formula (7):




In the formula, A represents a sulfur atom or an iodine atom.
m represents 1 or 2, and n represents 1 or 2, provided that when A is a sulfur atom, m+n=3 and when A is an iodine atom, m+n=2.
R represents an aryl group.
RN represents an aryl group substituted with a proton acceptor functional group.
X− represents a counter anion.
Specific examples of X− are the same as those of X− in formula (ZI).
Specific preferred examples of the aryl group of R and RN include a phenyl group.
Specific examples of the proton acceptor functional group contained in RN are the same as those of the proton acceptor functional group described above in formula (PA-1).
In the composition of the present invention, the blending ratio of the compound (PA) in the entire composition is preferably from 0.1 to 10 mass %, more preferably from 1 to 8 mass %, based on the total solid content.
(6) Guanidine Compound
The composition of the present invention may further contain a guanidine compound having a structure represented by the following formula:




The guanidine compound exhibits strong basicity because thanks to three nitrogens, dispersion of positive electric charges of a conjugate acid is stabilized.
As for the basicity of the guanidine compound (A) for use in the present invention, the pKa of the conjugate acid is preferably 6.0 or more, more preferably from 7.0 to 20.0 in view of high neutralization reactivity with an acid and excellent roughness characteristics, and still more preferably from 8.0 to 16.0.
Such strong basicity makes it possible to suppress diffusion of an acid and contribute to formation of an excellent pattern profile.
The “pKa” as used herein is pKa in an aqueous solution and described, for example, in Kagaku Binran (Chemical Handbook) (II) (4th revised edition, compiled by The Chemical Society of Japan, Maruzen (1993)), and as this value is lower, the acid strength is higher. Specifically, the acid dissociation constant at 25° C. is measured using an aqueous infinite dilution solution, whereby pKa in an aqueous solution can be actually measured. Alternatively, a value based on Hammett's substituent constants and data base containing values known in publications can be determined by computation using the following software package 1. The pKa values referred to in the description of the present invention all are a value determined by computation using this software package.
Software Package 1: Advanced Chemistry Development (ACD/Labs) Software V8.14 for Solaris (1994-2007 ACD/Labs)
In the present invention, the log P is a logarithmic value of the n-octanol/water partition coefficient (P) and is an effective parameter capable of characterizing the hydrophilicity/hydrophobicity for compounds over a wide range. The partition coefficient is generally determined by computation but not from experiments and in the present invention, a value computed using CS ChemDraw Ultra Ver. 8.0 software package (Crippen's fragmentation method) is employed.
The log P of the guanidine compound (A) is preferably 10 or less. With this value or less, the compound can be uniformly incorporated in the resist film.
The log P of the guanidine compound (A) for use in the present invention is preferably from 2 to 10, more preferably from 3 to 8, still more preferably 4 to 8.
The guanidine compound (A) for use in the present invention preferably contains no nitrogen atom except for in the guanidine structure.
Specific examples of the guanidine compound are illustrated below, but the present invention is not limited thereto.










(7) Low Molecular Compound Having a Nitrogen Atom and Having a Group Capable of Leaving by the Action of an Acid

The composition of the present invention may contain a low molecular compound having a nitrogen atom and having a group capable of leaving by the action of an acid (hereinafter, sometimes referred to as “low molecular compound (D)” or “compound (D)”). The low molecular compound (D) preferably exhibits basicity after the group capable of leaving by the action of an acid is eliminated.
The group capable of leaving by the action of an acid is not particularly limited but is preferably an acetal group, a carbonate group, a carbamate group, a tertiary ester group, a tertiary hydroxyl group or a hemiaminal ether group, more preferably a carbamate group or a hemiaminal ether group.
The molecular weight of the (D) low molecular compound having a group capable of leaving by the action of an acid is preferably from 100 to 1,000, more preferably from 100 to 700, still more preferably from 100 to 500.
The compound (D) is preferably an amine derivative having on the nitrogen atom a group capable of leaving by the action of an acid.
The compound (D) may have a protective group-containing carbamate group on the nitrogen atom. The protective group constituting the carbamate group can be represented by the following formula (d-1):




In formula (d-1), each R′ independently represents a hydrogen atom, a linear or branched alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkoxyalkyl group. R′ may combine with each other to form a ring.
R′ is preferably a linear or branched alkyl group, a cycloalkyl group or an aryl group, more preferably a linear or branched alkyl group or a cycloalkyl group.
Specific structures of the protective group are illustrated below.










The compound (D) may be also composed by arbitrarily combining the basic compound and the structure represented by formula (d-1).
The compound (D) is more preferably a compound having a structure represented by the following formula (A).
Incidentally, the compound (D) may be a compound corresponding to the above-described basic compound as long as it is a low molecular compound having a group capable of leaving by the action of an acid.




In formula (A), Ra represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group. Also, when n=2, two Ra may be the same or different, and two Ra may combine with each other to form a divalent heterocyclic hydrocarbon group (preferably having a carbon number of 20 or less) or a derivative thereof.
Each Rb independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkoxyalkyl group, provided that in —C(Rb)(Rb)(Rb), when one or more Rb are a hydrogen atom, at least one of the remaining Rb is a cyclopropyl group, a 1-alkoxyalkyl group or an aryl group.
At least two Rb may combine to form an alicyclic hydrocarbon group, an aromatic hydrocarbon group, a heterocyclic hydrocarbon group, or a derivative thereof.
n represents an integer of 0 to 2, m represents an integer of 1 to 3, and n+m=3.
In formula (A), the alkyl group, cycloalkyl group, aryl group and aralkyl group of Ra and Rb may be substituted with a functional group such as hydroxyl group, cyano group, amino group, pyrrolidino group, piperidino group, morpholino group and oxo group, an alkoxy group, or a halogen atom. The same applies to the alkoxyalkyl group of Rb.
Examples of the alkyl group, cycloalkyl group, aryl group and aralkyl group (these alkyl, cycloalkyl, aryl and aralkyl groups may be substituted with the above-described functional group, an alkoxy group or a halogen atom) of Ra and/or Rb include:
a group derived from a linear or branched alkane such as methane, ethane, propane, butane, pentane, hexane, heptane, octane, nonane, decane, undecane and dodecane, or a group where the group derived from an alkane is substituted with one or more kinds of or one or more groups of cycloalkyl groups such as cyclobutyl group, cyclopentyl group and cyclohexyl group;
a group derived from a cycloalkane such as cyclobutane, cyclopentane, cyclohexane, cycloheptane, cyclooctane, norbornane, adamantane and noradamantane, or a group where the group derived from a cycloalkane is substituted with one or more kinds of or one or more groups of linear or branched alkyl groups such as methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, 2-methylpropyl group, 1-methylpropyl group and tert-butyl group;
a group derived from an aromatic compound such as benzene, naphthalene and anthracene, or a group where the group derived from an aromatic compound is substituted with one or more kinds of or one or more groups of linear or branched alkyl groups such as methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, 2-methylpropyl group, 1-methylpropyl group and tert-butyl group;
a group derived from a heterocyclic compound such as pyrrolidine, piperidine, morpholine, tetrahydrofuran, tetrahydropyran, indole, indoline, quinoline, perhydroquinoline, indazole and benzimidazole, or a group where the group derived from a heterocyclic compound is substituted with one or more kinds of or one or more groups of linear or branched alkyl groups or aromatic compound-derived groups; a group where the group derived from a linear or branched alkane or the group derived from a cycloalkane is substituted with one or more kinds of or one or more groups of aromatic compound-derived groups such as phenyl group, naphthyl group and anthracenyl group; and a group where the substituent above is substituted with a functional group such as hydroxyl group, cyano group, amino group, pyrrolidino group, piperidino group, morpholino group and oxo group.
Examples of the divalent heterocyclic hydrocarbon group (preferably having a carbon number of 1 to 20) formed by combining Ra with each other or a derivative thereof include a group derived from a heterocyclic compound such as pyrrolidine, piperidine, morpholine, 1,4,5,6-tetrahydropyrimidine, 1,2,3,4-tetrahydroquinoline, 1,2,3,6-tetrahydropyridine, homopiperazine, 4-azabenzimidazole, benzotriazole, 5-azabenzotriazole, 1H-1,2,3-triazole, 1,4,7-triazacyclononane, tetrazole, 7-azaindole, indazole, benzimidazole, imidazo[1,2-a]pyridine, (1S,4S)-(+)-2,5-diazabicyclo[2.2.1]heptane, 1,5,7-triazabicyclo[4.4.0]dec-5-ene, indole, indoline, 1,2,3,4-tetrahydroquinoxaline, perhydroquinoline and 1,5,9-triazacyclododecane, and a group where the group derived from a heterocyclic compound is substituted with one or more kinds of or one or more groups of linear or branched alkane-derived groups, cycloalkane-derived groups, aromatic compound-derived groups, heterocyclic compound-derived groups, and functional groups such as hydroxyl group, cyano group, amino group, pyrrolidino group, piperidino group, morpholino group and oxo group.
Specific examples of the compound (D) particularly preferred in the present invention are illustrated below, but the present invention is not limited thereto.




























The compound represented by formula (A) can be synthesized by referring to, for example, JP-A-2007-298569 and JP-A-2009-199021.
In the present invention, as for the low molecular weight compound (D), one compound may be used alone, or two or more compounds may be mixed and used.
The composition of the present invention may or may not contain the low molecular compound (D), but in the case of containing the compound (D), the content thereof is usually from 0.001 to 20 mass %, preferably from 0.001 to 10 mass %, more preferably from 0.01 to 5 mass %, based on the total solid content of the composition combined with the basic compound.
In the case where the composition of the present invention contains an acid generator, the ratio between the acid generator and the compound (D) used in the composition is preferably acid generator/[compound (D)+basic compound] (by mol)=from 2.5 to 300. That is, the molar ratio is preferably 2.5 or more in view of sensitivity and resolution and is preferably 300 or less from the standpoint of suppressing the reduction in resolution due to thickening of the resist pattern over time after exposure until heat treatment. The acid generator/[compound (D)+basic compound] (by mol) is more preferably from 5.0 to 200, still more preferably from 7.0 to 150.
Other examples of the basic compound which can be used in the composition of the present invention include compounds synthesized in Examples of JP-A-2002-363146 and compounds described in paragraph 0108 of JP-A-2007-298569.
A photosensitive basic compound may be also used as the basic compound. Examples of the photosensitive basic compound which can be used include compounds described in JP-T-2003-524799 (the term “JP-T” as used herein means a “published Japanese translation of a PCT patent application”) and J. Photopolym. Sci. & Tech., Vol. 8, pp. 543-553 (1995).
The molecular weight of the basic compound is usually from 100 to 1,500, preferably from 150 to 1,300, more preferably from 200 to 1,000.
One kind of these basic compounds may be used alone, or two or more kinds thereof may be used in combination.
In the case where the composition of the present invention contains a basic compound, the content thereof is preferably from 0.01 to 8.0 mass %, more preferably from 0.1 to 5.0 mass %, still more preferably from 0.2 to 4.0 mass %, based on the total solid content of the composition.
The molar ratio of the basic compound to the photoacid generator is preferably from 0.01 to 10, more preferably from 0.05 to 5, still more preferably from 0.1 to 3. If the molar ratio is excessively large, the sensitivity and/or resolution may be reduced, whereas if the molar ratio is excessively small, thinning of the pattern may occur between exposure and heating (post-baking). The molar ratio is more preferably from 0.05 to 5, still more preferably from 0.1 to 3. In this molar ratio, the proportion of the photoacid generator is based on the total amount of the repeating unit (B) of the resin and the photoacid generator that may be further contained in the resin.
[7] Hydrophobic Resin (HR)
The actinic ray-sensitive or radiation-sensitive resin composition of the present invention may contain (HR) a hydrophobic resin separately from the resin (P).
The hydrophobic resin (HR) preferably contains a fluorine atom-containing group, a silicon atom-containing group or a hydrocarbon group having a carbon number of 5 or more so as to be unevenly distributed to the film surface. Such a group may be present in the main chain of the resin or may be substituted on the side chain. Specific examples of the hydrophobic resin (HR) are illustrated below.

























As the hydrophobic resin, in addition, those described in JP-A-2011-248019, JP-A-2010-175859 and JP-A-2012-032544 may be also preferably used.
The weight average molecular weight of the hydrophobic resin (HR) is, in terms of standard polystyrene, preferably from 1,000 to 100,000, more preferably from 1,000 to 50,000, still more preferably from 2,000 to 20,000.
As for the hydrophobic resin (HR), one kind may be used or a plurality of kinds may be used in combination.
The content of the hydrophobic resin (HR) in the composition is preferably from 0.01 to 20 mass %, more preferably from 0.05 to 15 mass %, still more preferably from 0.1 to 10 mass %, based on the total solid content in the composition.
Furthermore, in view of sensitivity, resolution, roughness and the like, the molecular weight distribution (Mw/Mn, sometimes referred to as “polydispersity”) is preferably from 1 to 5, more preferably from 1 to 3, still more preferably from 1 to 2.
[8] Surfactant
The actinic ray-sensitive or radiation-sensitive resin composition of the present invention may further contain a surfactant. Among others, the surfactant is preferably a fluorine-containing and/or silicon-containing surfactant.
Examples of the fluorine-containing and/or silicon-containing surfactant include Megaface F176 and Megaface R08 produced by DIC Corporation; PF656 and PF6320 produced by OMNOVA; Troysol S-366 produced by Troy Chemical; Florad FC430 produced by Sumitomo 3M Inc.; and Polysiloxane Polymer KP-341 produced by Shin-Etsu Chemical Co., Ltd.
A surfactant other than the fluorine-containing and/or silicon-containing surfactant may be also used. Examples of this surfactant include a nonionic surfactant such as polyoxyethylene alkyl ethers and polyoxyethylene alkylaryl ethers.
In addition, known surfactants may be appropriately used. Examples of the surfactant which can be used include surfactants described in paragraph [0273] et seq. of U.S. Patent Application Publication No. 2008/0248425A1.
One kind of a surfactant may be used alone, or two or more kinds of surfactants may be used in combination.
In the case where the composition of the present invention further contains a surfactant, the content of the surfactant is preferably from 0.0001 to 2 mass %, more preferably from 0.001 to 1 mass %, based on the total solid content of the resin composition.
[9] Other Additives
The composition of the present invention may appropriately contain, in addition to the components described above, a carboxylic acid, an onium carboxylate, a dissolution inhibiting compound having a molecular weight of 3,000 or less described, for example, in Proceeding of SPIE, 2724, 355 (1996), a dye, a plasticizer, a photosensitizer, a light absorber, an antioxidant and the like.
In particular, a carboxylic acid is suitably used for enhancing the performance. The carboxylic acid is preferably an aromatic carboxylic acid such as benzoic acid and naphthoic acid.
The content of the carboxylic acid is preferably from 0.01 to 10 mass %, more preferably from 0.01 to 5 mass %, still more preferably from 0.01 to 3 mass %, based on the total solid content concentration of the composition.
From the standpoint of enhancing the resolution, the actinic ray-sensitive or radiation-sensitive resin composition of the present invention is preferably used in a film thickness of 10 to 250 nm, more preferably from 20 to 200 nm, still more preferably from 30 to 100 nm. Such a film thickness can be achieved by setting the solid content concentration in the composition to an appropriate range, thereby imparting an appropriate viscosity and enhancing the coatability and film-forming property.
The solid content concentration in the actinic ray-sensitive or radiation-sensitive resin composition of the present invention is usually from 1.0 to 10 mass %, preferably from 2.0 to 5.7 mass %, more preferably from 2.0 to 5.3 mass %. By setting the solid content concentration to the range above, the resist solution can be uniformly coated on a substrate and furthermore, a resist pattern improved in the line width roughness can be formed. The reason therefor is not clearly known, but it is considered that probably thanks to a solid content concentration of 10 mass % or less, preferably 5.7 mass % or less, aggregation of materials, particularly, a photoacid generator, in the resist solution is suppressed, as a result, a uniform resist film can be formed.
The solid content concentration is a weight percentage of the weight of resist components excluding the solvent, based on the total weight of the actinic ray-sensitive or radiation-sensitive resin composition.
The actinic ray-sensitive or radiation-sensitive resin composition of the present invention is used by dissolving the components above in a predetermined organic solvent, preferably in the above-described mixed solvent, filtering the solution, and coating the filtrate on a predetermined support (substrate). The filter used for filtration is preferably a polytetrafluoroethylene-, polyethylene- or nylon-made filter having a pore size of 0.1 μm or less, more preferably 0.05 μm or less, still more preferably 0.03 μm or less. In the filtration through a filter, as described, for example, in JP-A-2002-62667, circulating filtration may be performed, or the filtration may be performed by connecting a plurality of kinds of filters in series or in parallel. Also, the composition may be filtered a plurality of times. Furthermore, a deaeration treatment or the like may be applied to the composition before and after filtration through a filter.
[10] Pattern Forming Method
The present invention relates to an actinic ray-sensitive or radiation-sensitive film (hereinafter, sometimes referred to as resist film) formed using the above-described composition of the present invention.
Also, the pattern forming method of the present invention includes at least:
(i) a step of forming a film (resist film) from an actinic ray-sensitive or radiation-sensitive resin composition,
(ii) a step of exposing the film, and
(iii) a step of developing the exposed film by using a developer to form a pattern.
The developer in the step (iii) may be an organic solvent-containing developer or an alkali developer but is preferably an organic solvent-containing developer, because the effects of the present invention are more markedly brought out.
Specifically, the pattern forming method of the present invention preferably includes at least:
(i) a step of forming a film (resist film) from an actinic ray-sensitive or radiation-sensitive resin composition,
(ii) a step of exposing the film, and
(iii′) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern.
The exposure in the step (ii) may be immersion exposure.
The pattern forming method of the present invention preferably includes (iv) a heating step after the exposure step (ii).
The pattern forming method of the present invention may further include (v) a step of performing development by using an alkali developer when the developer in the step (iii) is an organic solvent-containing developer, and on the other hand, may further include (v) a step of performing development by using an organic solvent-containing developer when the developer in the step (iii) is an alkali developer.
In the pattern forming method of the present invention, the exposure step (ii) may be performed a plurality of times.
In the pattern forming method of the present invention, the heating step (v) may be performed a plurality of times.
The resist film is formed of the above-described actinic ray-sensitive or radiation-sensitive resin composition of the present invention and, more specifically, is preferably formed on a substrate. In the pattern forming method of the present invention, the step of forming a film on a substrate by using the actinic ray-sensitive or radiation-sensitive resin composition, the step of exposing the film, and the development step can be performed by generally known methods.
For example, the composition is coated on such a substrate as used in the production of a precision integrated circuit device, an imprint mold or the like (e.g., silicon/silicon dioxide-coated substrate, silicon nitride and chromium-deposited quartz substrate) by using a spinner, a coater or the like. The coating is thereafter dried, whereby an actinic ray-sensitive or radiation-sensitive film can be formed.
Before forming the resist film, an antireflection film may be previously provided by coating on the substrate.
The antireflection film used may be either an inorganic film type such as titanium, titanium dioxide, titanium nitride, chromium oxide, carbon and amorphous silicon, or an organic film type composed of a light absorber and a polymer material. A commercially available organic antireflection film such as DUV30 Series and DUV-40 Series produced by Brewer Science, Inc. and AR-2, AR-3 and AR-5 produced by Shipley Co., Ltd. may be also used as the organic antireflection film.
The pattern forming method also preferably includes, after film formation, a pre-baking step (PB) before entering the exposure step.
Furthermore, the pattern forming method also preferably includes a post-exposure baking step (PEB) after the exposure step but before the development step.
As for the heating temperature, both PB and PEB are preferably performed at 70 to 120° C., more preferably at 80 to 110° C.
The heating time is preferably from 30 to 300 seconds, more preferably from 30 to 180 seconds, still more preferably from 30 to 90 seconds.
The heating can be performed using a device attached to an ordinary exposure/developing machine or may be performed using a hot plate or the like.
The reaction in the exposed area is accelerated by the baking and in turn, the sensitivity or pattern profile is improved.
It is also preferred to include a heating step (post baking) after the rinsing step. By the baking, the developer and rinsing solution remaining between patterns as well as in the inside of the pattern are removed.
Examples of the actinic ray or radiation include infrared light, visible light, ultraviolet light, far ultraviolet light, X-ray, and electron beam. An actinic ray or radiation having, for example, a wavelength of 250 nm or less, particularly 220 nm or less, is preferred. Such an actinic ray or radiation includes, for example, KrF excimer laser (248 nm), ArF excimer laser (193 nm), F2 excimer laser (157 nm), X-ray, and electron beam. The actinic ray or radiation is preferably, for example, KrF excimer laser, ArF excimer laser, electron beam, X-ray or EUV light, more preferably electron beam, X-ray or EUV light.
In the present invention, an immersion exposure method can be applied in the step of performing exposure.
The immersion exposure method is a technique to increase the resolution, and this is a technique of performing exposure by filling a space between the projection lens and the sample with a high refractive-index liquid (hereinafter, sometimes referred to as an “immersion liquid”).
As for the “effect of immersion”, assuming that λ0 is the wavelength of exposure light in air, n is the refractive index of the immersion liquid for air, θ is the convergence half-angle of beam and NA0=sin θ, the resolution and the depth of focus in immersion can be expressed by the following formulae. Here, k1 and k2 are coefficients related to the process.

(Resolution)=k1·(λ0/n)/NA0 

(Depth of focus)=±k2·(λ0/n)/NA02 

That is, the effect of immersion is equal to use of an exposure wavelength of 1/n. In other words, in the case of a projection optical system having the same NA, the depth of focus can be made n times larger by immersion. This is effective for all pattern profiles and furthermore, can be combined with the super-resolution technology under study at present, such as phase-shift method and modified illumination method.
In the case of performing immersion exposure, a step of washing the film surface with an aqueous chemical may be performed (1) before the exposure step after forming the film on a substrate and/or (2) after the step of exposing the film through an immersion liquid but before the step of baking the film.
The immersion liquid is preferably a liquid being transparent to light at the exposure wavelength and having as small a temperature coefficient of refractive index as possible in order to minimize the distortion of an optical image projected on the film. In particular, when the exposure light source is ArF excimer laser (wavelength: 193 nm), water is preferably used in view of easy availability and easy handleability in addition to the above-described aspects.
In the case of using water, an additive (liquid) capable of decreasing the surface tension of water and increasing the interface activity may be added in a small ratio. This additive is preferably an additive that does not dissolve the resist layer on the wafer and at the same time, gives only a negligible effect on the optical coat at the undersurface of the lens element.
Such an additive is preferably, for example, an aliphatic alcohol having a refractive index substantially equal to that of water, and specific examples thereof include methyl alcohol, ethyl alcohol and isopropyl alcohol. By virtue of adding an alcohol having a refractive index substantially equal to that of water, even when the alcohol component in water is evaporated and its content concentration is changed, the change in the refractive index of the liquid as a whole can be advantageously made very small.
On the other hand, if a substance opaque to light at 193 nm or an impurity greatly differing in the refractive index from water migrates into the water, this gives rise to distortion of an optical image projected on the resist. Therefore, the water used is preferably distilled water. Furthermore, pure water after filtration through an ion exchange filter or the like may be also used.
The electrical resistance of water used as the immersion liquid is preferably 18.3 MΩcm or more, and TOC (total organic carbon) is preferably 20 ppb or less. The water is preferably subjected to a deaeration treatment.
Also, the lithography performance can be enhanced by raising the refractive index of the immersion liquid. From such a standpoint, an additive for raising the refractive index may be added to water, or heavy water (D2O) may be used in place of water.
In the immersion exposure step, the immersion liquid must move on a wafer following the movement of an exposure head that is scanning the wafer at a high speed and forming an exposure pattern. Therefore, the contact angle of the immersion liquid for the resist film in a dynamic state is important, and the resist is required to have a performance of allowing the immersion liquid to follow the high-speed scanning of an exposure head with no remaining of a liquid droplet.
In order to prevent the film from directly contacting with the immersion liquid, a film (hereinafter, sometimes referred to as a “topcoat”) sparingly soluble in the immersion liquid may be provided between the film formed using the composition of the present invention and the immersion liquid. The functions required of the topcoat are suitability for coating as a resist overlayer, transparency to radiation, particularly, radiation having a wavelength of 193 nm, and sparing solubility in immersion liquid. The topcoat is preferably unmixable with the resist and capable of being uniformly coated as an overlayer of the resist.
In view of transparency to light at 193 nm, the topcoat is preferably an aromatic-free polymer.
Specific examples thereof include a hydrocarbon polymer, an acrylic acid ester polymer, a polymethacrylic acid, a polyacrylic acid, a polyvinyl ether, a silicon-containing polymer, and a fluorine-containing polymer. If an impurity dissolves out into the immersion liquid from the topcoat, the optical lens is contaminated. For this reason, residual monomer components of the polymer are preferably little contained in the topcoat.
On removing the topcoat, a developer may be used, or a release agent may be separately used. The release agent is preferably a solvent less likely to permeate the film. From the standpoint that the removing step can be performed simultaneously with the film development step, the topcoat is preferably removable with an alkali developer and in view of removal with an alkali developer, the topcoat is preferably acidic, but considering non-intermixing with the film, the topcoat may be neutral or alkaline.
The difference in the refractive index between the topcoat and the immersion liquid is preferably null or small. In this case, the resolution can be enhanced. In the case where the exposure light source is ArF excimer laser (wavelength: 193 nm), water is preferably used as the immersion liquid and therefore, the topcoat for ArF immersion exposure preferably has a refractive index close to the refractive index (1.44) of water. Also, in view of transparency and refractive index, the topcoat is preferably a thin film.
The topcoat is preferably unmixable with the film and further unmixable also with the immersion liquid. From this standpoint, when the immersion liquid is water, the solvent used for the topcoat is preferably a medium that is sparingly soluble in the solvent used for the composition of the present invention and is water-insoluble. Furthermore, when the immersion liquid is an organic solvent, the topcoat may be either water-soluble or water-insoluble.
On the other hand, when performing EUV exposure or EB exposure, for the purpose of outgas inhibition or blob defect suppression or for preventing, for example, worsening of the collapse performance due to a reverse taper profile or worsening of LWR due to surface roughening, a topcoat layer may be formed as an overlayer of the resist film formed of the actinic ray-sensitive or radiation-sensitive resin composition of the present invention. The topcoat composition used for formation of the topcoat layer is described below.
In the topcoat composition for use in the present invention, the solvent is preferably water or an organic solvent, more preferably water or an alcohol-based solvent.
In the case where the solvent is an organic solvent, a solvent incapable of dissolving the resist film is preferred. As the solvent which can be used, an alcohol-based solvent, a fluorine-based solvent or a hydrocarbon-based solvent is preferably used, and it is more preferred to use a fluorine-free alcohol-based solvent. The alcohol-based solvent is, in view of coatability, preferably a primary alcohol, more preferably a primary alcohol having a carbon number of 4 to 8. As the primary alcohol having a carbon number of 4 to 8, a linear, branched or cyclic alcohol may be used, but a linear or branched alcohol is preferred. Specific examples thereof include 1-butanol, 1-hexanol, 1-pentanol, and 3-methyl-1-butanol.
In the case where the solvent of the topcoat composition for use in the present invention is water, an alcohol-based solvent or the like, the composition preferably contains a water-soluble resin. It is considered that the uniformity of solubility in the developer can be more enhanced by containing a water-soluble resin. Preferred examples of the water-soluble resin include polyacrylic acid, polymethacrylic acid, polyhydroxystyrene, polyvinylpyrrolidone, polyvinyl alcohol, polyvinyl ether, polyvinyl acetal, polyacrylimide, polyethylene glycol, polyethylene oxide, polyethyleneimine, polyester polyol, polyether polyol, and polysaccharides. Among these, polyacrylic acid, polymethacrylic acid, polyhydroxystyrene, polyvinylpyrrolidone and polyvinyl alcohol are preferred. Incidentally, the water-soluble resin is not limited only to a homopolymer and may be a copolymer, for example, may be a copolymer having a monomer corresponding to the repeating unit of the homopolymer described above and another monomer unit. Specifically, an acrylic acid-methacrylic acid copolymer, an acrylic acid-hydroxystyrene copolymer, and the like may be also used in the present invention.
As the resin for the topcoat composition, a resin having an acidic group described in JP-A-2009-134177 and JP-A-2009-91798 may be also preferably used.
The weight average molecular weight of the water-soluble resin is not particularly limited but is preferably from 2,000 to 1,000,000, more preferably from 5,000 to 500,000, still more preferably from 10,000 to 100,000. The weight average molecular weight of the resin as used herein indicates a molecular weight in terms of polystyrene measured by GPC (carrier: THF or N-methyl-2-pyrrolidone (NMP)).
The pH of the topcoat composition is not particularly limited but is preferably from 0 to 10, more preferably from 0 to 8, still more preferably from 1 to 7.
In the case where the solvent of the topcoat composition is an organic solvent, the topcoat composition may contain a hydrophobic resin such as the hydrophobic resin (HR) described above in the paragraph of an actinic ray-sensitive or radiation-sensitive resin composition. As the hydrophobic resin, it is also preferred to use a hydrophobic resin described in JP-A-2008-209889.
The concentration of the resin in the topcoat composition is preferably from 0.1 to 10 mass %, more preferably from 0.2 to 5 mass %, still more preferably from 0.3 to 3 mass %.
The topcoat material may contain a component other than the resin, but the proportion of the resin in the solid content of the topcoat composition is preferably form 80 to 100 mass %, more preferably from 90 to 100 mass %, still more preferably from 95 to 100 mass %.
The solid content concentration of the topcoat composition for use in the present invention is preferably from 0.1 to 10 mass %, more preferably from 0.2 to 6 mass %, still more preferably from 0.3 to 5 mass %. By adjusting the solid content concentration to fall in the range above, the topcoat composition can be uniformly coated on the resist film.
Examples of the component other than the resin, which can be added to the topcoat material, include a surfactant, a photoacid generator, and a basic compound. Specific examples of the photoacid generator and basic compound include the same compounds as those of the above-described compound capable of generating an acid upon irradiation with an actinic ray or radiation and the basic compound.
In the case of using a surfactant, the amount of the surfactant used is preferably from 0.0001 to 2 mass %, more preferably from 0.001 to 1 mass %, based on the total amount of the topcoat composition.
Addition of a surfactant to the topcoat composition makes it possible to enhance the coatability when coating the topcoat composition. The surfactant includes nonionic, anionic, cationic and amphoteric surfactants.
Examples of the nonionic surfactant which can be used include Plufarac Series produced by BASF; ELEBASE Series, Finesurf Series, and Blaunon Series produced by Aoki Oil Industrial Co., Ltd.; Adeka Pluronic P-103 produced by Asahi Denka Co., Ltd.; Emulgen Series, Amiet Series, Aminon PK-02S, Emanon CH-25, and Rheodol Series produced by Kao Corporation; Surflon S-141 produced by AGC Seimi Chemical Co., Ltd.; Noigen Series produced by Daiichi Kogyo Seiyaku Co., Ltd.; Newcalgen Series produced by Takemoto Oil & Fat Co., Ltd.; DYNOL 604, EnviroGem AD01, Olfine EXP Series, and Surfynol Series produced by Nisshin Chemical Industry Co., Ltd.; and Ftergent 300 produced by Ryoko Chemical Co., Ltd.
Examples of the anionic surfactant which can be used include Emal 20T and Poiz 532A produced by Kao Corporation; Phosphanol ML-200 produced by Toho Chemical Industry Co., Ltd.; EMULSOGEN Series produced by Clariant Japan K.K.; Surflon S-111N and Surflon S-211 produced by AGC Seimi Chemical Co., Ltd.; Plysurf Series produced by Dai-ichi Kogyo Seiyaku Co., Ltd.; Pionin Series produced by Takemoto Oil & Fat Co., Ltd.; Olfine PD-201 and Olfine PD-202 produced by Nisshin Chemical Industry Co., Ltd.; AKYPO RLM45 and ECT-3 produced by Nihon Surfactant Kogyo K.K.; and Lipon produced by Lion Corporation.
Examples of the cationic surfactant which can be used include Acetamin 24 and Acetamin 86 produced by Kao Corporation.
Examples of the amphoteric surfactant which can be used include Surflon S-131 (produced by AGC Seimi Chemical Co., Ltd.); and Enagicol C-40H and Lipomin LA (both produced by Kao Corporation).
Also, these surfactants may be mixed and used.
In the pattern forming method of the present invention, a resist film can be formed on a substrate by using the above-described actinic ray-sensitive or radiation-sensitive resin composition, and a topcoat layer can be formed on the resist film by using the topcoat composition. The film thickness of the topcoat layer is preferably from 10 to 200 nm, more preferably from 20 to 100 nm, still more preferably from 40 to 80 nm.
The method for coating the actinic ray-sensitive or radiation-sensitive resin composition on a substrate is preferably spin coating, and the rotation speed thereof is preferably from 1,000 to 3,000 rpm.
For example, the actinic ray-sensitive or radiation-sensitive resin composition is coated on such a substrate as used in the production of a precision integrated circuit device (e.g., silicon/silicon dioxide-coated substrate) by an appropriate coating method such as spinner and coater and then dried to form a resist film. Incidentally, a known antireflection film may be previously provided by coating. Also, the resist film is preferably dried before forming a topcoat layer.
On the resist film obtained, the topcoat composition is coated by the same method as the resist film forming method and dried, whereby a topcoat layer can be formed.
The resist film having thereon a topcoat layer is irradiated with an electron beam (EB), an X-ray or EUV light usually through a mask, then preferably baked (heated), and further subjected to development, whereby a good pattern can be obtained.
In the present invention, the substrate on which the film is formed is not particularly limited, and a substrate generally used in the process of producing a semiconductor such as IC or producing a liquid crystal device or a circuit board such as thermal head or in the lithography of other photo-fabrication processes, for example, an inorganic substrate such as silicon, SiN, SiO2 and SiN, or a coating-type inorganic substrate such as SOG, can be used. If desired, an organic antireflection film may be formed between the film and the substrate.
In the case where the pattern forming method of the present invention includes a step of performing development by using an alkali developer, the alkali developer which can be used includes, for example, an alkaline aqueous solution of inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate and aqueous ammonia, primary amines such as ethylamine and n-propylamine, secondary amines such as diethylamine and di-n-butylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, quaternary ammonium salts such as tetramethylammonium hydroxide and tetraethylammonium hydroxide, or cyclic amines such as pyrrole and piperidine.
This alkaline aqueous solution may be also used after adding thereto alcohols and a surfactant each in an appropriate amount.
The alkali concentration of the alkali developer is usually from 0.1 to 20 mass %.
The pH of the alkali developer is usually from 10.0 to 15.0.
In particular, an aqueous solution of 2.38 mass % tetramethylammonium hydroxide is preferred.
As for the rinsing solution in the rinsing treatment performed after the alkali development, pure water is used, and the pure water may be also used after adding thereto a surfactant in an appropriate amount.
After the development or rinsing, a treatment of removing the developer or rinsing solution adhering on the pattern by a supercritical fluid may be performed.
In the case where the pattern forming method of the present invention includes a step of performing development by using an organic solvent-containing developer, as for the developer used in the step (hereinafter, sometimes referred to as an “organic developer”), a polar solvent such as ketone-based solvent, ester-based solvent, alcohol-based solvent, amide-based solvent and ether-based solvent, or a hydrocarbon-based solvent can be used.
Examples of the ketone-based solvent include 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 2-heptanone(methyl amyl ketone), 4-heptanone, 1-hexanone, 2-hexanone, diisobutyl ketone, cyclohexanone, methylcyclohexanone, phenylacetone, methyl ethyl ketone, methyl isobutyl ketone, acetyl acetone, acetonyl acetone, ionone, diacetonyl alcohol, acetyl carbinol, acetophenone, methyl naphthyl ketone, isophorone, and propylene carbonate.
Examples of the ester-based solvent include methyl acetate, butyl acetate, ethyl acetate, isopropyl acetate, pentyl acetate, isopentyl acetate, amyl acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl-3-ethoxypropionate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, methyl formate, ethyl formate, butyl formate, propyl formate, ethyl lactate, butyl lactate, and propyl lactate.
Examples of the alcohol-based solvent include an alcohol such as methyl alcohol, ethyl alcohol, n-propyl alcohol, isopropyl alcohol, n-butyl alcohol, sec-butyl alcohol, tert-butyl alcohol, isobutyl alcohol, n-hexyl alcohol, n-heptyl alcohol, n-octyl alcohol and n-decanol; a glycol-based solvent such as ethylene glycol, diethylene glycol and triethylene glycol; and a glycol ether-based solvent such as ethylene glycol monomethyl ether, propylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monoethyl ether, diethylene glycol monomethyl ether, triethylene glycol monoethyl ether and methoxymethyl butanol.
Examples of the ether-based solvent include, in addition to the glycol ether-based solvents above, anisole, dioxane and tetrahydrofuran.
Examples of the amide-based solvent which can be used include N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, hexamethylphosphoric triamide, and 1,3-dimethyl-2-imidazolidinone.
Examples of the hydrocarbon-based solvent include an aromatic hydrocarbon-based solvent such as toluene and xylene, and an aliphatic hydrocarbon-based solvent such as pentane, hexane, octane and decane.
A plurality of these solvents may be mixed, or the solvent may be used by mixing it with a solvent other than those described above or with water. However, in order to sufficiently bring out the effects of the present invention, the percentage water content in the entire developer is preferably less than 10 mass %, and it is more preferred to contain substantially no water.
That is, the amount of the organic solvent used in the organic developer is preferably from 90 to 100 mass %, more preferably from 95 to 100 mass %, based on the total amount of the developer.
In particular, the organic developer is preferably a developer containing at least one kind of an organic solvent selected from the group consisting of a ketone-based solvent, an ester-based solvent, an alcohol-based solvent, an amide-based solvent and an ether-based solvent.
The vapor pressure at 20° C. of the organic developer is preferably 5 kPa or less, more preferably 3 kPa or less, still more preferably 2 kPa or less. By setting the vapor pressure of the organic developer to 5 kPa or less, evaporation of the developer on a substrate or in a development cup is suppressed and the temperature uniformity in the wafer plane is enhanced, as a result, the dimensional uniformity in the wafer plane is improved.
Specific examples of the solvent having a vapor pressure of 5 kPa or less include a ketone-based solvent such as 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, 2-heptanone (methyl amyl ketone), 4-heptanone, 2-hexanone, diisobutyl ketone, cyclohexanone, methylcyclohexanone, phenylacetone and methyl isobutyl ketone; an ester-based solvent such as butyl acetate, pentyl acetate, isopentyl acetate, amyl acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl-3-ethoxypropionate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, butyl formate, propyl formate, ethyl lactate, butyl lactate and propyl lactate; an alcohol-based solvent such as n-propyl alcohol, isopropyl alcohol, n-butyl alcohol, sec-butyl alcohol, tert-butyl alcohol, isobutyl alcohol, n-hexyl alcohol, n-heptyl alcohol, n-octyl alcohol and n-decanol; a glycol-based solvent such as ethylene glycol, diethylene glycol and triethylene glycol; a glycol ether-based solvent such as ethylene glycol monomethyl ether, propylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monoethyl ether, diethylene glycol monomethyl ether, triethylene glycol monoethyl ether and methoxymethylbutanol; an ether-based solvent such as anisole, tetrahydrofuran; an amide-based solvent such as N-methyl-2-pyrrolidone, N,N-dimethylacetamide and N,N-dimethylformamide; an aromatic hydrocarbon-based solvent such as toluene and xylene; and an aliphatic hydrocarbon-based solvent such as octane and decane.
Specific examples of the solvent having a vapor pressure of 2 kPa or less that is a particularly preferred range include a ketone-based solvent such as 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, 2-heptanone, 4-heptanone, 2-hexanone, diisobutyl ketone, cyclohexanone, methylcyclohexanone and phenylacetone; an ester-based solvent such as butyl acetate, amyl acetate, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl-3-ethoxypropionate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, ethyl lactate, butyl lactate and propyl lactate; an alcohol-based solvent such as n-butyl alcohol, sec-butyl alcohol, tert-butyl alcohol, isobutyl alcohol, n-hexyl alcohol, n-heptyl alcohol, n-octyl alcohol and n-decanol; a glycol-based solvent such as ethylene glycol, diethylene glycol and triethylene glycol; a glycol ether-based solvent such as ethylene glycol monomethyl ether, propylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monoethyl ether, diethylene glycol monomethyl ether, triethylene glycol monoethyl ether and methoxymethylbutanol; an amide-based solvent such as N-methyl-2-pyrrolidone, N,N-dimethylacetamide and N,N-dimethylformamide; an aromatic hydrocarbon-based solvent such as xylene; and an aliphatic hydrocarbon-based solvent such as octane and decane.
Among others, it is more preferred to contain one or more solvents selected from the group consisting of 2-heptanone, butyl acetate, pentyl acetate, isopentyl acetate, propylene glycol monomethyl ether acetate and anisole.
In the organic developer, a surfactant can be added in an appropriate amount, if desired.
The surfactant is not particularly limited but, for example, ionic or nonionic fluorine-containing and/or silicon-containing surfactants can be used. Examples of the fluorine-containing and/or silicon-containing surfactants include surfactants described in JP-A-62-36663, JP-A-61-226746, JP-A-61-226745, JP-A-62-170950, JP-A-63-34540, JP-A-7-230165, JP-A-8-62834, JP-A-9-54432, JP-A-9-5988 and U.S. Pat. Nos. 5,405,720, 5,360,692, 5,529,881, 5,296,330, 5,436,098, 5,576,143, 5,294,511 and 5,824,451. A nonionic surfactant is preferred. The nonionic surfactant is not particularly limited, but use of a fluorine-containing surfactant or a silicon-containing surfactant is more preferred.
The amount of the surfactant used is usually from 0.001 to 5 mass %, preferably from 0.005 to 2 mass %, more preferably from 0.01 to 0.5 mass %, based on the total amount of the developer.
Also, the organic developer may contain an appropriate amount of a basic compound, if desired. Examples of the basic compound include those described above in the paragraph of [6] Basic Compound.
As regards the developing method, for example, a method of dipping the substrate in a bath filled with the developer for a fixed time (dipping method), a method of raising the developer on the substrate surface by the effect of a surface tension and keeping it still for a fixed time, thereby performing the development (puddling method), a method of spraying the developer on the substrate surface (spraying method), and a method of continuously ejecting the developer on the substrate spinning at a constant speed while scanning a developer ejecting nozzle at a constant rate (dynamic dispense method) may be applied.
In the case where the above-described various developing methods include a step of ejecting the developer toward the resist film from a development nozzle of a developing apparatus, the ejection pressure of the developer ejected (the flow velocity per unit area of the developer ejected) is preferably 2 mL/sec/mm2 or less, more preferably 1.5 mL/sec/mm2 or less, still more preferably 1 mL/sec/mm2 or less. The flow velocity has no particular lower limit but in view of throughput, is preferably 0.2 mL/sec/mm2 or more.
By setting the ejection pressure of the ejected developer to the range above, pattern defects attributable to the resist scum after development can be greatly reduced.
Details of this mechanism are not clearly known, but it is considered that thanks to the ejection pressure in the above-described range, the pressure imposed on the resist film by the developer becomes small and the resist film or resist pattern is kept from inadvertent chipping or collapse.
Here, the ejection pressure (mL/sec/mm2) of the developer is a value at the outlet of a development nozzle in a developing apparatus.
Examples of the method for adjusting the ejection pressure of the developer include a method of adjusting the ejection pressure by a pump or the like, and a method of supplying the developer from a pressurized tank and adjusting the pressure to change the ejection pressure.
After the step of performing development by using an organic solvent-containing developer, a step of stopping the development by replacing the solvent with another solvent may be practiced.
The pattern forming method may include a step of rinsing the film with a rinsing solution after the step of performing development by using an organic solvent-containing developer, but in view of, for example, throughput (productivity) and the amount of rinsing solution used, it is preferred not to include a step of rinsing the film with a rinsing solution.
The rinsing solution used in the rinsing step after the step of performing development by using an organic solvent-containing developer is not particularly limited as long as it does not dissolve the resist pattern, and a solution containing a general organic solvent may be used. As the rinsing solution, a rinsing solution containing at least one kind of an organic solvent selected from the group consisting of a hydrocarbon-based solvent, a ketone-based solvent, an ester-based solvent, an alcohol-based solvent, an amide-based solvent and an ether-based solvent is preferably used.
Specific examples of the hydrocarbon-based solvent, ketone-based solvent, ester-based solvent, alcohol-based solvent, amide-based solvent and ether-based solvent are the same as those described above for the organic solvent-containing developer.
After the step of performing development by using an organic solvent-containing developer, more preferably, a step of rinsing the film by using a rinsing solution containing at least one kind of an organic solvent selected from the group consisting of a ketone-based solvent, an ester-based solvent, an alcohol-based solvent and an amide-based solvent is preformed; still more preferably, a step of rinsing the film by using a rinsing solution containing an alcohol-based solvent or an ester-based solvent is performed; yet still more preferably, a step of rinsing the film by using a rinsing solution containing a monohydric alcohol is performed; and most preferably, a step of rinsing the film by using a rinsing solution containing a monohydric alcohol having a carbon number of 5 or more is performed.
The monohydric alcohol used in the rinsing step includes a linear, branched or cyclic monohydric alcohol, and specific examples of the monohydric alcohol which can be used include 1-butanol, 2-butanol, 3-methyl-1-butanol, tert-butyl alcohol, 1-pentanol, 2-pentanol, 1-hexanol, 4-methyl-2-pentanol, 1-heptanol, 1-octanol, 2-hexanol, cyclopentanol, 2-heptanol, 2-octanol, 3-hexanol, 3-heptanol, 3-octanol and 4-octanol. As for the particularly preferred monohydric alcohol having a carbon number of 5 or more, 1-hexanol, 2-hexanol, 4-methyl-2-pentanol, 1-pentanol, 3-methyl-1-butanol and the like can be used.
A plurality of these components may be mixed, or the solvent may be used by mixing it with an organic solvent other than those described above.
The percentage water content in the rinsing solution is preferably 10 mass % or less, more preferably 5 mass % or less, still more preferably 3 mass % or less. By setting the percentage water content to 10 mass % or less, good development characteristics can be obtained.
The vapor pressure at 20° C. of the rinsing solution used after the step of performing development by using an organic solvent-containing developer is preferably from 0.05 to 5 kPa, more preferably from 0.1 to 5 kPa, and most preferably from 0.12 to 3 kPa. By setting the vapor pressure of the rinsing solution to the range from 0.05 to 5 kPa, the temperature uniformity in the wafer plane is enhanced and moreover, swelling due to permeation of the rinsing solution is suppressed, as a result, the dimensional uniformity in the wafer plane is improved.
The rinsing solution may be also used after adding thereto a surfactant in an appropriate amount.
In the rinsing step, the wafer after development using an organic solvent-containing developer is rinsed using the above-described organic solvent-containing rinsing solution. The method for rinsing treatment is not particularly limited, but examples of the method which can be applied include a method of continuously ejecting the rinsing solution on the substrate spinning at a constant speed (spin coating method), a method of dipping the substrate in a bath filled with the rinsing solution for a fixed time (dipping method), and a method of spraying the rinsing solution on the substrate surface (spraying method). Above all, it is preferred to perform the rinsing treatment by the spin coating method and after the rinsing, remove the rinsing solution from the substrate surface by spinning the substrate at a rotation speed of 2,000 to 4,000 rpm. It is also preferred to include a heating step (Post Bake) after the rinsing step. By the baking, the developer and rinsing solution remaining between patterns as well as in the inside of the pattern are removed. The heating step after the rinsing step is performed at usually from 40 to 160° C., preferably from 70 to 95° C., for usually from 10 seconds to 3 minutes, preferably from 30 to 90 seconds.
In the pattern forming method of the present invention, a step of performing development by using an organic solvent-containing developer (organic solvent development step) and a step of performing development by using an aqueous alkali solution (alkali development step) may be used in combination. Thanks to this combination, a finer pattern can be formed.
In the present invention, the portion of low exposure intensity is removed in the organic solvent development step, and by further performing the alkali development step, the portion of high exposure intensity is also removed. By virtue of the multiple development process of performing development a plurality of times in this way, a pattern can be formed by keeping only the region of intermediate exposure intensity from being dissolved, so that a finer pattern than usual can be formed (the same mechanism as in [0077] of JP-A-2008-292975).
In the pattern forming method of the present invention, the order of the alkali development step and the organic solvent development step is not particularly limited, but the alkali development is preferably performed before the organic solvent development step.
Also, an imprint mold may be produced using the composition of the present invention. For details, refer to, for example, Japanese Patent 4,109,085, JP-A-2008-162101, and “Yoshihiko Hirai (compiler), Nanoimprint no Kiso to Gijutsu Kaihatsu•Oyo Tenkai-Nanoimprint no Kiban Gijutsu to Saishin no Gijutsu Tenkai (Basic and Technology Expansion•Application Development of Nanoimprint-Substrate Technology of Nanoimprint and Latest Technology Expansion), Frontier Shuppan”.
The present invention also relates to a method for manufacturing an electronic device, comprising the above-described pattern forming method of the present invention, and an electronic device manufactured by this manufacturing method.
The electronic device of the present invention is suitably mounted on electric electronic equipment (such as home electronics, OA•media equipment, optics and communication equipment).
EXAMPLES
The present invention is described in greater detail below by referring to Examples, but the present invention should not be construed as being limited to the following Examples.
Synthesis Example 1
Synthesis of Resin (P-2)
The resin was synthesized according to the following scheme.




19.30 g of Compound (1) was dissolved in 109.37 g of n-hexane, and 47.13 g of cyclohexanol, 19.30 g of anhydrous magnesium sulfate and 2.60 g of 10-camphorsulfonic acid were added thereto. This mixture was stirred at room temperature (20° C.) for 10 hours, and 5.67 g of triethylamine was added thereto, followed by stirring for 10 minutes. After removing solids by filtration, 300 g of ethyl acetate was added, and the organic layer was washed with 200 g of ion-exchanged water five times and then dried over anhydrous magnesium sulfate. The solvent was then removed by distillation, as a result, 43.50 g of a solution containing Compound (2) was obtained. To this solution, 7.36 g of acetyl chloride was added, and this mixture was stirred at room temperature for 2 hours to obtain 50.86 g of a solution containing Compound (3).
3.50 g of Compound (4) was dissolved in 19.83 g of dehydrated tetrahydrofuran, and 3.50 g of anhydrous magnesium sulfate and 9.31 g of triethylamine were added thereto. This mixture was stirred in a nitrogen atmosphere and after cooling to 0° C., 25.88 g of the solution containing Compound (3) was added dropwise, followed by stirring at room temperature for 2 hours. After removing solids by filtration, 300 g of ethyl acetate was added, and the organic phase was washed with 100 g of ion-exchanged water five times and then dried over anhydrous magnesium sulfate. The solvent was removed by distillation, and the residue was subjected to isolation and purification by column chromatography to obtain 4.60 g of Compound (5).
2.88 g of a cyclohexanone solution (50.00 mass %) of Compound (6), 0.89 g of Compound (7), 10.43 g of Compound (5), and 0.40 g of polymerization initiator V-65 (produced by Wako Pure Chemical Industries, Ltd.) were dissolved in 45.55 g of cyclohexanone, and 25.31 g of cyclohexanone was put in a reaction vessel and, in a nitrogen gas atmosphere, added dropwise to the system at 65° C. over 4 hours. The reaction solution was stirred under heating over 2 hours and then allowed to cool to room temperature.
The reaction solution above was added dropwise to 600 g of heptane/ethyl acetate=9/1 (by mass), and a polymer was precipitated and collected by filtration. The solid collected by filtration was washed by spraying 150 g of hexane/ethyl acetate=9/1 (by mass), and the solid after washing was dried under reduced pressure to obtain 7.95 g of Resin (P-2).
Synthesis Example 2
Synthesis of Resin (P-1)
The resin was synthesized according to the following scheme.




4.30 g of Compound (8) was dissolved in 24.37 g of dehydrated tetrahydrofuran, and 4.30 g of anhydrous magnesium sulfate and 35.38 g of triethylamine were added thereto. This mixture was stirred in a nitrogen atmosphere and after cooling to 0° C., 98.34 g of the solution containing Compound (3) was added dropwise, followed by stirring at room temperature for 2 hours. After removing solids by filtration, 400 g of ethyl acetate was added, and the organic phase was washed with 100 g of ion-exchanged water five times and then dried over anhydrous magnesium sulfate. The solvent was removed by distillation, and the residue was subjected to isolation and purification by column chromatography to obtain 12.58 g of Compound (9).
5.05 g of a cyclohexanone solution (50.00 mass %) of Compound (6), 1.56 g of Compound (7), 10.68 g of Compound (9), and 0.65 g of polymerization initiator V-601 (produced by Wako Pure Chemical Industries, Ltd.) were dissolved in 51.85 g of cyclohexanone, and 29.28 g of cyclohexanone was put in a reaction vessel and, in a nitrogen gas atmosphere, added dropwise to the system at 85° C. over 4 hours. The reaction solution was stirred under heating over 2 hours and then allowed to cool to room temperature.
The reaction solution above was added dropwise to 700 g of heptane/ethyl acetate=9/1 (by mass), and a polymer was precipitated and collected by filtration. The solid collected by filtration was washed by spraying 200 g of heptane/ethyl acetate=9/1 (by mass), and the solid after washing was dried under reduced pressure to obtain 4.95 g of Resin (P-1).
Resins (P-3) to (P-24), (P-26), (P-29), (P-31), (P-34), (P-35), (P-38) and (Ab′-1) to (Ab′-4) were synthesized in the same manner. Structures of polymers synthesized are illustrated above as specific examples.
In addition, Resins (Ab′-1) to (Ab′-4) for Comparative Examples were also synthesized in accordance with the method above.
The weight average molecular weight (Mw), the compositional ratio (by mol) of respective repeating units in the polymer structure, and the polydispersity (Mw/Mn) of each of Resins (P-1) to (P-24), (P-26), (P-29), (P-31), (P-34), (P-35), (P-38) and (Ab′-1) to (Ab′-4) are shown in the Table 1 below.














TABLE 1






Weight





Average



Molecular

Poly-


Resin
Weight
Compositional Ratio
dispersity






















P-1
11500
30
10
60
—
—
1.45


P-2
13000
30
10
60
—
—
1.48


P-3
12500
30
10
60
—
—
1.44


P-4
12000
30
10
60
—
—
1.49


P-5
12000
30
10
60
—
—
1.47


P-6
8000
35
50
10
5
—
1.38


P-7
16000
45
5
50
—
—
1.55


P-8
17500
45
5
50
—
—
1.58


P-9
18000
45
5
50
—
—
1.52


P-10
17000
45
5
50
—
—
1.54


P-11
4000
40
20
40
—
—
1.42


P-12
4000
40
20
40
—
—
1.44


P-13
12000
25
10
55
5
5
1.39


P-14
14000
10
80
10
—
—
1.55


P-15
21000
60
25
15
—
—
1.59


P-16
18000
20
30
50
—
—
1.60


P-17
6500
20
5
45
30 
—
1.57


P-18
6000
25
45
30
—
—
1.51


P-19
8000
72
13
15
—
—
1.59


P-20
16500
72
14
14
—
—
1.65


P-21
9000
40
60
—
—
—
1.42


P-22
5000
30
70
—
—
—
1.48


P-23
10000
50
50
—
—
—
1.46


P-24
5000
30
55
15
—
—
1.52


P-26
15000
20
70
10
—
—
1.65


P-29
10000
45
52
 3
—
—
1.58


P-31
18000
40
40
20
—
—
1.54


P-34
8000
35
55
10
—
—
1.55


P-35
12000
25
60
15
—
—
1.60


P-38
9000
40
10
50
—
—
1.62


Ab′-1
6400
25
45
30
—
—
1.55


Ab′-2
6300
25
45
30
—
—
1.50


Ab′-3
7500
72
13
15
—
—
1.58


Ab′-4
16100
72
14
14
—
—
1.63









[Hydrophobic Resin (HR)]

As the hydrophobic resin (HR), Resins (HR-1), (HR-24) and (HR-29) were used. Polymer structures of respective hydrophobic resins (HR) are illustrated above as specific examples. Also, the compositional ratio in Table 2 below corresponds to the compositional ratio (mol %) of respective repeating units starting from the left in each of polymer structures illustrated above.












TABLE 2







Weight Average

Compositional
Poly-



Molecular Weight

Ratio
dispersity






















HR-1
10000
85
15
1.51



HR-24
5000
50
50
1.60



HR-29
12000
5
95
1.55










[Photoacid Generator]

As the photoacid generator, the compounds illustrated above as specific examples were appropriately selected and used.
[Basic Compound]
As the basic compound, any one of the following compounds (N-1) to (N-12) was used.







Incidentally, Compound (N-7) comes under the compound (PA) and was synthesized based on the description in paragraph [0354] of JP-A-2006-330098.
<Coating Solvent>


    S-1: Propylene glycol monomethyl ether acetate (PGMEA; boiling point (b.p.)=146° C.)
    S-2: Propylene glycol monomethyl ether (PGME; b.p.=120° C.)
    S-3: Methyl lactate (b.p.=145° C.)
    S-4: Cyclohexanone (b.p.=157° C.)

[Surfactant]



As the surfactant, the following W-1 to W-4 were used.

    W-1: Megaface R08 (produced by DIC Corporation) (containing fluorine and silicon)
    W-2: Polysiloxane Polymer KP-341 (produced by Shin-Etsu Chemical Co., Ltd.) (silicon-containing)
    W-3: Troysol S-366 (produced by Troy Chemical; fluorine-containing)
    W-4: PF6320 (produced by OMNOVA) (fluorine-containing)

<Developer>



As the developer, the followings were used.

    G-1: Butyl acetate
    G-2: Methyl amyl ketone (2-heptanone)
    G-3: Anisole
    TMAH: Aqueous 2.38 mass % tetramethylammonium hydroxide solution

<Rinsing Solution>



As the rinsing solution, the followings were used.

    G-4: 4-Methyl-2-pentanol
    G-5: 1-Hexanol
    G-6: Decane

[Examples 1-1 to 1-30 and Comparative Examples 1-1 to 1-4; Electron Beam (EB) Exposure, Organic Solvent Development, Evaluation of Isolated Line]

(1) Preparation and Coating of Coating Solution of Actinic Ray-Sensitive or Radiation-Sensitive Resin Composition



A coating solution composition having a solid content concentration of 3.0 mass % according to the formulation shown in Table 3 below was microfiltered through a membrane filter having a pore size of 0.1 μm to obtain an actinic ray-sensitive or radiation-sensitive resin composition (resist composition) solution.
This actinic ray-sensitive or radiation-sensitive resin composition was coated on a 6-inch Si wafer previously subjected to a hexamethyldisilazane (HMDS) treatment, by using a spin coater, Mark 8, manufactured by Tokyo Electron Ltd. and dried on a hot plate at 100° C. for 60 seconds to obtain a resist film having a thickness of 100 nm.
(2) EB Exposure and Organic Solvent Development
The resist film-coated wafer obtained in (1) above was patternwise irradiated by using an electron beam lithography apparatus (HL750, manufactured by Hitachi, Ltd., accelerating voltage: 50 KeV). At this time, the lithography was performed to form an isolated line pattern of line:space=1:>100. After the electron beam lithography, the wafer was heated on a hot plate at 100° C. for 90 seconds, then developed by puddling the organic developer shown in Table 3 below for 30 seconds, rinsed by using the rinsing solution shown in the Table below, spun at a rotation speed of 4,000 rpm for 30 seconds and heated at 95° C. for 60 seconds to obtain a resist pattern of a 1:1 line-and-space pattern with a line width of 100 nm.
(3) Evaluation of Resist Pattern
Using a scanning electron microscope (S-9220, manufacture by Hitachi Ltd.), the obtained resist pattern was evaluated for sensitivity, pattern profile, resolution in isolated line pattern, PEB temperature dependency and etching resistance by the following methods. The results obtained are shown in Table 3 below.
(3-1) Sensitivity
The irradiation energy below which the 1:1 line-and-space pattern with a line width of 100 nm cannot be resolved was taken as the sensitivity (Eop). A smaller value indicates higher performance.
(3-2) Evaluation of Pattern Profile
The cross-sectional profile of the 1:1 line-and-space pattern with a line width of 100 nm formed at the irradiation dose giving the above-described sensitivity was observed using a scanning electron microscope and evaluated on a scale of three grades of rectangular, tapered and reverse tapered.
(3-3) Resolution in Isolated Line Pattern
The limiting resolution (the minimum line width below which a line and a space cannot be separated and resolved) of an isolated line pattern (line:space=1:>100) formed at Eop above was determined. This value was taken as “resolution (nm)”. A smaller value indicates higher performance.
(3-4) PEB Temperature Dependency
The exposure dose for reproducing a line-and-space 1/1 mask pattern with a mask size of 100 nm when post-baking was performed at 100° C. for 90 seconds, was taken as an optimal exposure dose. After performing exposure at the optimal exposure dose, post-baking was performed at two temperatures of +2° C. and −2° C. with respect to the post-baking temperature (that is, 102° C. and 98° C.), and respective line-and-space patterns obtained were measured for the length to determine the line widths L1 and L2. The PEB temperature dependency was defined as the fluctuation of line width per PEB temperature change of 1° C. and calculated according to the following formula.

PEB Temperature dependency (nm/° C.)=|L1−L2|/4

A smaller value indicates less change in performance due to temperature change and is better.
(3-5) Etching Resistance
A resist film having a thickness of 200 nm was formed on a wafer and then subjected to plasma etching under the condition of a temperature of 23° C. over 30 seconds by using a mixed gas of C4F6 (20 mL/min) and O2 (40 mL/min). Thereafter, the residual film amount was determined, and the etching rate was calculated. The etching resistance was evaluated based on the following criteria.
(Evaluation Criteria)
A: When the etching rate is less than 15 Å/sec.
B: When the etching rate is 15 Å/sec or more.










TABLE 3









Resist Composition




















Photoacid







Resin
Hydro-

Generator

Surfac-



(mass %)
phobic
Solvent
(mass %)
Basic
tant
Developer



(mass
Resin
(mass
(mass
Compound
(0.01
(mass
Rinsing



ratio)
(mass %)
ratio)
ratio)
(mass %)
mass %)
ratio)
Solution





Example 1-1
P-1
—
S-1/S-2
z115
N-3
W-4
G-1
—



78

(80/20)
20
2


Example 1-2
P-2
—
S-1/S-2
z115
N-3
W-4
G-1
—



78

(80/20)
20
2


Example 1-3
P-3
—
S-1/S-2
z115
N-3
W-4
G-1
—



78

(80/20)
20
2


Example 1-4
P-4
—
S-1/S-2
z115
N-3
W-4
G-1
—



78

(80/20)
20
2


Example 1-5
P-5
—
S-1/S-2
z115
N-3
W-4
G-1
—



78

(80/20)
20
2


Example 1-6
P-6
—
S-1/S-2
z123
N-7
W-3
G-1
—



78

(60/40)
20
2


Example 1-7
P-7
—
S-1/S-2
z114
N-9
W-4
G-1
—



78

(70/30)
20
2


Example 1-8
P-8
—
S-1/S-2
z114
N-9
W-4
G-1
—



78

(70/30)
20
2


Example 1-9
P-9
—
S-1/S-2
z114
N-9
W-4
G-1
—



78

(70/30)
20
2


Example 1-10
P-10
—
S-1/S-2
z114
N-9
W-4
G-1
—



78

(70/30)
20
2


Example 1-11
P-11
—
S-1/S-2
z39
N-10
W-1
G-1
G-6



78

(90/10)
20
2


Example 1-12
P-12
—
S-1/S-2
z39
N-10
W-1
G-1
G-6



78

(90/10)
20
2


Example 1-13
P-13
—
S-1
z121
N-6
W-4
G-1
—



78


20
2


Example 1-14
P-14
—
S-1/S-4
z32
N-8
none
G-2
G-4



78

(80/20)
20
2


Example 1-15
P-15
—
S-1/S-3
z5
N-9
W-3
G-2
—



78

(80/20)
20
2


Example 1-16
P-16
—
S-2/S-4
z33
N-6
W-1
G-1/G-3
G-5



78

(50/50)
20
2

(80/20)


Example 1-17
P-17
—
S-1/S-4
z119
N-1
W-1
G-2
G-5



78

(70/30)
20
2


Example 1-18
P-18
—
S-1/S-2
z118
N-5
W-3
G-3
G-4



78

(80/20)
20
2


Example 1-19
P-19
—
S-3
z11
N-4
W-2
G-3
G-6



78


20
2


Example 1-20
P-20
—
S-1/S-3
z69/z122
N-2
W-2
G-1
—



78

(70/30)
20(20/80)
2


Example 1-21
P-21
—
S-1/S-2
z127
N-3
W-3
G-1
—



78

(80/20)
20
2


Example 1-22
P-1/P-22
—
S-1/S-2
z67
N-7
W-4
G-1
—



78(50/50)

(70/30)
20
2


Example 1-23
P-23
—
S-1/S-2
z108
N-8
W-4
G-1
—



78

(80/20)
20
2


Example 1-24
P-24
HR-1
S-2/S-1
—
N-6
W-3
G-1
—



88
10
(90/10)

2


Example 1-25
P-34
HR-24
S-1/S-2
z132
N-11
W-4
G-2
—



86
3
(60/40)
10
1


Example 1-26
P-35
HR-29
S-1/S-2
z133
N-12
W-4
G-1
—



62
5
(80/20)
30
3


Example 1-27
P-29
—
S-2/S-1
z130
N-11
W-2
G-1
—



94

(70/30)
5
1


Example 1-28
P-26
—
S-2/S-1
—
N-12
W-3
G-1
G-4



98

(80/20)

2


Example 1-29
P-31
—
S-2
—
N-11
W-3
G-2
—



97



3


Example 1-30
P-38
—
S-1/S-2
z132
N-11
W-1
G-1
—



78

(70/30)
20
2


Comparative
Ab′-1
—
S-1/S-4
z119
N-1
W-1
G-2
G-5


Example 1-1
78

(70/30)
20
2


Comparative
Ab′-2
—
S-1/S-2
z118
N-5
W-3
G-3
G-4


Example 1-2
78

(80/20)
20
2


Comparative
Ab′-3
—
S-3
z11
N-4
W-2
G-3
G-6


Example 1-3
78


20
2


Comparative
Ab′-4
—
S-1/S-3
z69/z122
N-2
W-2
G-1
—


Example 1-4
78

(70/30)
20(20/80)
2












Evaluation Results















Sensi-

Isolated
PEB





tivity

Pattern
Temperature
Etching




(μC/
Pattern
Resolution
Dependency
Resis-




cm2)
Profile
(nm)
(nm/° C.)
tance







Example 1-1
15
rectangular
75.0
0.8
A



Example 1-2
18
rectangular
87.5
1.1
A



Example 1-3
20
rectangular
100.0
1.2
A



Example 1-4
23
rectangular
100.0
1.5
A



Example 1-5
25
rectangular
112.5
1.7
A



Example 1-6
17
rectangular
87.5
0.9
A



Example 1-7
17
rectangular
75.0
1.0
A



Example 1-8
20
rectangular
87.5
1.3
A



Example 1-9
24
rectangular
100.0
1.6
A



Example 1-10
28
rectangular
112.5
1.8
A



Example 1-11
27
rectangular
100.0
1.3
A



Example 1-12
21
rectangular
87.5
1.2
A



Example 1-13
16
rectangular
87.5
1.1
A



Example 1-14
22
rectangular
100.0
1.4
A



Example 1-15
25
rectangular
100.0
1.3
A



Example 1-16
21
rectangular
100.0
1.2
A



Example 1-17
28
rectangular
87.5
1.8
A



Example 1-18
26
rectangular
87.5
1.6
A



Example 1-19
32
rectangular
100.0
1.4
A



Example 1-20
30
rectangular
100.0
1.3
A



Example 1-21
23
rectangular
75.0
0.9
A



Example 1-22
26
rectangular
75.0
1.0
A



Example 1-23
19
rectangular
75.0
1.1
A



Example 1-24
21
rectangular
100.0
1.2
A



Example 1-25
25
rectangular
87.5
1.5
A



Example 1-26
23
rectangular
75.0
1.1
A



Example 1-27
26
rectangular
87.5
1.6
A



Example 1-28
25
rectangular
100.0
1.0
A



Example 1-29
28
rectangular
75.0
1.2
A



Example 1-30
24
rectangular
75.0
1.1
A



Comparative
38
reverse
150.0
1.9
B



Example 1-1

tapered



Comparative
36
reverse
150.0
1.9
B



Example 1-2

tapered











Comparative
A pattern could not be formed.
A



Example 1-3














Comparative
32
tapered
125.0
3.5
A



Example 1-4










As apparent from Table 3 above, in Comparative Examples 1-1 and 1-2 using Resin (Ab′-1) and Resin (Ab′-2) containing the repeating unit represented by formula (1) but not containing the repeating unit represented by formula (A), the sensitivity and the resolution of an isolated line pattern were poor, the pattern profile was reverse tapered, the PEB temperature dependency was high, and the etching resistance was low. In Comparative Example 1-3 using Resin (Ab′-3) containing the repeating unit represented by formula (A) but not containing the repeating unit represented by formula (1), a pattern could not be formed, making it impossible to measure the sensitivity, the resolution of an isolated line pattern, the pattern profile, the PEB temperature dependency, and the etching resistance. Similarly, in Comparative Example 1-4 using Resin (Ab′-4) containing the repeating unit represented by formula (A) but not containing the repeating unit represented by formula (1), the PEB temperature dependency was high in particular, the pattern profile was tapered, and the resolution of an isolated line pattern was poor.
On the other hand, in all of Examples 1-1 to 1-30 using the resin (P) containing the repeating unit represented by formula (1) and the repeating unit represented by formula (A), the resolution of an isolated line pattern was excellent, the PEB temperature dependency was low, the pattern profile was rectangular, and the sensitivity and etching resistance were high.
[Examples 2-1 to 2-30 and Comparative Examples 2-1 and 2-4;Electron Beam (EB) Exposure, Positive Development with Aqueous Alkali Solution, Evaluation of Isolated Line]
(4) Preparation of an actinic ray-sensitive or radiation-sensitive resin composition, pattern formation, and evaluation of the resist pattern were performed in the same manner as in Examples 1-1 to 1-30 and Comparative Examples 1-1 to 1-4 except that the resist film was irradiated with an electron beam by inverting the image drawing region, the development was performed using an aqueous alkali solution (TMAH; an aqueous 2.38 mass % tetramethylammonium hydroxide solution) in place of the organic developer, and the rinsing solution was changed to water.










TABLE 4









Resist Composition












Photoacid

Evaluation Results



















Resin
Hydro-

Generator

Surfac-
Sensi-

Isolated
PEB




(mass %)
phobic
Solvent
(mass %)
Basic
tant
tivity

Pattern
Temperature
Etching



(mass
Resin
(mass
(mass
Compound
(0.01
(μC/
Pattern
Resolution
Dependency
Resis-



ratio)
(mass %)
ratio)
ratio)
(mass %)
mass %)
cm2)
Profile
(nm)
(nm/° C.)
tance






















Example 2-1
P-1
—
S-1/S-2
z11
N-3
W-4
16
rectangular
75.0
0.5
A



63

(80/20)
535
2


Example 2-2
P-2
—
S-1/S-2
z11
N-3
W-4
19
rectangular
87.5
0.8
A



63

(80/20)
535
2


Example 2-3
P-3
—
S-1/S-2
z11
N-3
W-4
22
rectangular
100.0
1.0
A



63

(80/20)
535
2


Example 2-4
P-4
—
S-1/S-2
z11
N-3
W-4
24
rectangular
112.5
1.4
A



63

(80/20)
535
2


Example 2-5
P-5
—
S-1/S-2
z11
N-3
W-4
27
rectangular
112.5
1.6
A



63

(80/20)
535
2


Example 2-6
P-6
—
S-1/S-2
z123
N-7
W-3
18
rectangular
75.0
0.7
A



63

(60/40)
35
2


Example 2-7
P-7
—
S-1/S-2
z114
N-9
W-4
17
rectangular
75.0
0.9
A



63

(70/30)
35
2


Example 2-8
P-8
—
S-1/S-2
z114
N-9
W-4
20
rectangular
87.5
1.2
A



63

(70/30)
35
2


Example 2-9
P-9
—
S-1/S-2
z114
N-9
W-4
25
rectangular
100.0
1.4
A



63

(70/30)
35
2


Example 2-10
P-10
—
S-1/S-2
z114
N-9
W-4
28
rectangular
112.5
1.6
A



63

(70/30)
35
2


Example 2-11
P-11
—
S-1/S-2
z39
N-10
W-1
25
rectangular
100.0
1.5
A



63

(90/10)
35
2


Example 2-12
P-12
—
S-1/S-2
z39
N-10
W-1
20
rectangular
75.0
1.3
A



63

(90/10)
35
2


Example 2-13
P-13
—
S-1
z121
N-6
W-4
18
rectangular
87.5
1.1
A



63


35
2


Example 2-14
P-14
—
S-1/S-4
z32
N-8
none
22
rectangular
87.5
1.6
A



63

(80/20)
35
2


Example 2-15
P-15
—
S-1/S-3
z5
N-9
W-3
24
rectangular
87.5
1.2
A



63

(80/20)
35
2


Example 2-16
P-16
—
S-2/S-4
z33
N-6
W-1
20
rectangular
100.0
1.4
A



63

(50/50)
35
2


Example 2-17
P-17
—
S-1/S-4
z119
N-1
W-1
29
rectangular
100.0
1.6
A



63

(70/30)
35
2


Example 2-18
P-18
—
S-1/S-2
z118
N-5
W-3
26
rectangular
100.0
1.6
A



63

(80/20)
35
2


Example 2-19
P-19
—
S-3
z11
N-4
W-2
28
rectangular
100.0
1.5
A



63


35
2


Example 2-20
P-20
—
S-1/S-3
z69/z122
N-2
W-2
29
rectangular
100.0
1.3
A



63

(70/30)
35(20/80)
2


Example 2-21
P-21
—
S-1/S-2
z127
N-3
W-3
24
rectangular
75.0
0.7
A



63

(80/20)
35
2


Example 2-22
P-1/P-22
—
S-1/S-2
z67
N-7
W-4
25
rectangular
75.0
0.9
A



63(50/50)

(70/30)
35
2


Example 2-23
P-23
—
S-1/S-2
z108
N-8
W-4
20
rectangular
87.5
0.9
A



63

(80/20)
35
2


Example 2-24
P-24
HR-1
S-2/S-1
—
N-6
W-3
23
rectangular
125.0
1.5
A



88
10
(90/10)

2


Example 2-25
P-34
HR-24
S-1/S-2
z132
N-11
W-4
25
rectangular
100.0
1.5
A



86
3
(60/40)
10
1


Example 2-26
P-35
HR-29
S-1/S-2
z133
N-12
W-4
24
rectangular
87.5
1.3
A



62
5
(80/20)
30
3


Example 2-27
P-29
—
S-2/S-1
z130
N-11
W-2
28
rectangular
87.5
1.7
A



94

(70/30)
5
1


Example 2-28
P-26
—
S-2/S-1
—
N-12
W-3
26
rectangular
100.0
1.1
A



98

(80/20)

2


Example 2-29
P-31
—
S-2
—
N-11
W-3
29
rectangular
87.5
1.4
A



97



3


Example 2-30
P-38
—
S-1/S-2
z132
N-11
W-1
26
rectangular
87.5
1.5
A



78

(70/30)
20
2


Comparative
Ab′-1

S-1/S-4
z119
N-1
W-1
37
reverse
150.0
1.8
B


Example 2-1
63

(70/30)
35
2


tapered


Comparative
Ab′-2

S-1/S-2
z118
N-5
W-3
36
reverse
150.0
1.9
B


Example 2-2
63

(80/20)
35
2


tapered


Comparative
Ab′-3

S-3
z11
N-4
W-2
30
tapered
125.0
3.5
A


Example 2-3
63


35
2


Comparative
Ab′-4

S-1/S-3
z69/z122
N-2
W-2
31
tapered
125.0
3.3
A


Example 2-4
63

(70/30)
35(20/80)
2









As apparent from Table 4 above, in Comparative Examples 2-1 and 2-2 using Resin (Ab′-1) and Resin (Ab′-2) containing the repeating unit represented by formula (1) but not containing the repeating unit represented by formula (A), the sensitivity and the resolution of an isolated line pattern were poor, the pattern profile was reverse tapered, the PEB temperature dependency was high, and the etching resistance was low. In Comparative Examples 2-3 and 2-4 using Resin (Ab′-3) and (Ab′-4) containing the repeating unit represented by formula (A) but not containing the repeating unit represented by formula (1), the PEB temperature dependency was high in particular, the pattern profile was tapered, and the resolution of an isolated line pattern was poor.
On the other hand, in all of Examples 2-1 to 2-30 using the resin (P) containing the repeating unit represented by formula (1) and the repeating unit represented by formula (A), the resolution of an isolated line pattern was excellent, the PEB temperature dependency was low, the pattern profile was rectangular, and the sensitivity and etching resistance were high.
[Examples 3-1 to 3-30 and Comparative Examples 3-1 to 3-4; Extreme-ultraviolet Ray (EUV) Exposure, Organic Solvent Development, Evaluation of Isolated Line]
(5) Preparation and Coating of Coating Solution of Actinic Ray-Sensitive or Radiation-Sensitive Resin Composition
A coating solution composition having a solid content concentration of 1.5 mass % according to the formulation shown in Table 5 below was microfiltered through a membrane filter having a pore size of 0.05 μm to obtain an actinic ray-sensitive or radiation-sensitive resin composition (resist composition) solution.
This actinic ray-sensitive or radiation-sensitive resin composition was coated on a 6-inch Si wafer previously subjected to a hexamethyldisilazane (HMDS) treatment, by using a spin coater, Mark 8, manufactured by Tokyo Electron Ltd. and dried on a hot plate at 100° C. for 60 seconds to obtain a resist film having a thickness of 50 nm.
(6) EUV Exposure and Organic Solvent Development
The resist film-coated wafer obtained in (5) above was patternwise exposed by using an EUV exposure apparatus (Micro Exposure Tool, manufactured by Exitech, NA: 0.3, X-dipole, outer sigma: 0.68, inner sigma: 0.36) through an exposure mask (line/space=5/1). After the irradiation, the resist film was heated on a hot plate at 100° C. for 90 seconds, then developed by puddling the organic developer shown in Table 5 below for 30 seconds, rinsed by using the rinsing solution shown in the Table below, spun at a rotation speed of 4,000 rpm for 30 seconds and baked at 95° C. for 60 seconds to obtain a resist pattern of a 1:1 line-and-space pattern having a line width of 50 nm.
(7) Evaluation of Resist Pattern
Using a scanning electron microscope (S-9380II, manufacture by Hitachi Ltd.), the obtained resist pattern was evaluated for sensitivity, pattern profile, resolution in isolated line pattern, PEB temperature dependency and etching resistance by the following methods.
(7-1) Sensitivity
The irradiation energy below which the pattern of line/space=1:1 with a line width of 50 nm cannot be resolved was taken as the sensitivity (Eop). A smaller value indicates higher performance.
(7-2) Evaluation of Pattern Profile
The cross-sectional profile of the 1:1 line-and-space pattern with a line width of 50 nm formed at the irradiation dose giving the above-described sensitivity was observed using a scanning electron microscope and evaluated on a scale of three grades of rectangular, tapered and reverse tapered.
(7-3) Resolution in Isolated Line Pattern
The limiting resolution (the minimum line width below which a line and a space cannot be separated and resolved) of an isolated line pattern (line/space=1:5) formed at Eop above was determined. This value was taken as “resolution (nm)”. A smaller value indicates higher performance.
(7-4) PEB Temperature Dependency
The exposure dose for reproducing a line-and-space 1/1 mask pattern with a mask size of 50 nm when post-baking was performed at 100° C. for 90 seconds, was taken as an optimal exposure dose. After performing exposure at the optimal exposure dose, post-baking was performed at two temperatures of +2° C. and −2° C. with respect to the post-baking temperature (that is, 102° C. and 98° C.), and respective line-and-space patterns obtained were measured for the length to determine the line widths L1 and L2. The PEB temperature dependency was defined as the fluctuation of line width per PEB temperature change of 1° C. and calculated according to the following formula.

PEB Temperature dependency (nm/° C.)=|L1−L2|/4

A smaller value indicates less change in performance due to temperature change and is better.
(7-5) Etching Resistance
A resist film having a thickness of 200 nm was formed on a wafer and then subjected to plasma etching under the condition of a temperature of 23° C. over 30 seconds by using a mixed gas of C4F6 (20 mL/min) and O2 (40 mL/min). Thereafter, the residual film amount was determined, and the etching rate was calculated. The etching resistance was evaluated based on the following criteria.
(Evaluation Criteria)
A: When the etching rate is less than 15 Å/sec.
B: When the etching rate is 15 Å/sec or more.










TABLE 5









Resist Composition




















Photoacid







Resin
Hydro-

Generator

Surfac-



(mass %)
phobic
Solvent
(mass %)
Basic
tant
Developer



(mass
Resin
(mass
(mass
Compound
(0.01
(mass
Rinsing



ratio)
(mass %)
ratio)
ratio)
(mass %)
mass %)
ratio)
Solution





Example 3-1
P-1
—
S-1/S-2
z115
N-3
W-4
G-1
—



78

(80/20)
20
2


Example 3-2
P-2
—
S-1/S-2
z115
N-3
W-4
G-1
—



78

(80/20)
20
2


Example 3-3
P-3
—
S-1/S-2
z115
N-3
W-4
G-1
—



78

(80/20)
20
2


Example 3-4
P-4
—
S-1/S-2
z115
N-3
W-4
G-1
—



78

(80/20)
20
2


Example 3-5
P-5
—
S-1/S-2
z115
N-3
W-4
G-1
—



78

(80/20)
20
2


Example 3-6
P-6
—
S-1/S-2
z123
N-7
W-3
G-1
—



78

(60/40)
20
2


Example 3-7
P-7
—
S-1/S-2
z114
N-9
W-4
G-1
—



78

(70/30)
20
2


Example 3-8
P-8
—
S-1/S-2
z114
N-9
W-4
G-1
—



78

(70/30)
20
2


Example 3-9
P-9
—
S-1/S-2
z114
N-9
W-4
G-1
—



78

(70/30)
20
2


Example 3-10
P-10
—
S-1/S-2
z114
N-9
W-4
G-1
—



78

(70/30)
20
2


Example 3-11
P-11
—
S-1/S-2
z39
N-10
W-1
G-1
G-6



78

(90/10)
20
2


Example 3-12
P-12
—
S-1/S-2
z39
N-10
W-1
G-1
G-6



78

(90/10)
20
2


Example 3-13
P-13
—
S-1
z121
N-6
W-4
G-1
—



78


20
2


Example 3-14
P-14
—
S-1/S-4
z32
N-8
none
G-2
G-4



78

(80/20)
20
2


Example 3-15
P-15
—
S-1/S-3
z5
N-9
W-3
G-2
—



78

(80/20)
20
2


Example 3-16
P-16
—
S-2/S-4
z33
N-6
W-1
G-1/G-3
G-5



78

(50/50)
20
2

(80/20)


Example 3-17
P-17
—
S-1/S-4
z119
N-1
W-1
G-2
G-5



78

(70/30)
20
2


Example 3-18
P-18
—
S-1/S-2
z118
N-5
W-3
G-3
G-4



78

(80/20)
20
2


Example 3-19
P-19
—
S-3
z11
N-4
W-2
G-3
G-6



78


20
2


Example 3-20
P-20
—
S-1/S-3
z69/z122
N-2
W-2
G-1
—



78

(70/30)
20(20/80)
2


Example 3-21
P-21
—
S-1/S-2
z127
N-3
W-3
G-1
—



78

(80/20)
20
2


Example 3-22
P-1/P-22
—
S-1/S-2
z67
N-7
W-4
G-1
—



78(50/50)

(70/30)
20
2


Example 3-23
P-23
—
S-1/S-2
z108
N-8
W-4
G-1
—



78

(80/20)
20
2


Example 3-24
P-24
HR-1
S-2/S-1
—
N-6
W-3
G-1
—



88
10
(90/10)

2


Example 3-25
P-34
HR-24
S-1/S-2
z132
N-11
W-4
G-2
—



86
3
(60/40)
10
1


Example 3-26
P-35
HR-29
S-1/S-2
z133
N-12
W-4
G-1
—



62
5
(80/20)
30
3


Example 3-27
P-29
—
S-2/S-1
z130
N-11
W-2
G-1
—



94

(70/30)
5
1


Example 3-28
P-26
—
S-2/S-1
—
N-12
W-3
G-1
G-4



98

(80/20)

2


Example 3-29
P-31
—
S-2
—
N-11
W-3
G-2
—



97



3


Example 3-30
P-38
—
S-1/S-2
z132
N-11
W-1
G-1
—



78

(70/30)
20
2


Comparative
Ab′-1
—
S-1/S-4
z119
N-1
W-1
G-2
G-5


Example 3-1
78

(70/30)
20
2


Comparative
Ab′-2
—
S-1/S-2
z118
N-5
W-3
G-3
G-4


Example 3-2
78

(80/20)
20
2


Comparative
Ab′-3
—
S-3
z11
N-4
W-2
G-3
G-6


Example 3-3
78


20
2


Comparative
Ab′-4
—
S-1/S-3
z69/z122
N-2
W-2
G-1
—


Example 3-4
78

(70/30)
20(20/80)
2












Evaluation Results

















Isolated
PEB





Sensi-

Pattern
Temperature
Etching




tivity
Pattern
Resolution
Dependency
Resis-




(mJ/cm2)
Profile
(nm)
(nm/° C.)
tance







Example 3-1
13
rectangular
26.0
0.5
A



Example 3-2
15
rectangular
28.0
0.8
A



Example 3-3
18
rectangular
30.0
1.0
A



Example 3-4
20
rectangular
32.0
1.3
A



Example 3-5
23
rectangular
34.0
1.6
A



Example 3-6
15
rectangular
24.0
0.7
A



Example 3-7
18
rectangular
28.0
0.6
A



Example 3-8
21
rectangular
32.0
0.9
A



Example 3-9
25
rectangular
34.0
1.1
A



Example 3-10
27
rectangular
38.0
1.4
A



Example 3-11
24
rectangular
36.0
1.6
A



Example 3-12
20
rectangular
32.0
1.3
A



Example 3-13
21
rectangular
32.0
1.5
A



Example 3-14
24
rectangular
32.0
0.9
A



Example 3-15
23
rectangular
34.0
1.1
A



Example 3-16
22
rectangular
36.0
1.3
A



Example 3-17
26
rectangular
34.0
1.5
A



Example 3-18
28
rectangular
36.0
1.5
A



Example 3-19
30
rectangular
38.0
1.3
A



Example 3-20
29
rectangular
36.0
1.2
A



Example 3-21
16
rectangular
26.0
0.8
A



Example 3-22
18
rectangular
28.0
0.6
A



Example 3-23
20
rectangular
28.0
1.0
A



Example 3-24
18
rectangular
30.0
1.0
A



Example 3-25
20
rectangular
28.0
0.9
A



Example 3-26
21
rectangular
30.0
0.8
A



Example 3-27
19
rectangular
26.0
1.1
A



Example 3-28
22
rectangular
34.0
0.9
A



Example 3-29
24
rectangular
32.0
0.8
A



Example 3-30
22
rectangular
32.0
0.9
A



Comparative
34
reverse
48.0
1.8
B



Example 3-1

tapered



Comparative
35
reverse
46.0
1.7
B



Example 3-2

tapered











Comparative
A pattern could not be formed.
A



Example 3-3














Comparative
30
tapered
42.0
3.0
A



Example 3-4










As apparent from Table 5 above, in Comparative Examples 3-1 and 3-2 using Resin (Ab′-1) and Resin (Ab′-2) containing the repeating unit represented by formula (1) but not containing the repeating unit represented by formula (A), the sensitivity and the resolution of an isolated line pattern were poor, the pattern profile was reverse tapered, the PEB temperature dependency was high, and the etching resistance was low. In Comparative Example 3-3 using Resin (Ab′-3) containing the repeating unit represented by formula (A) but not containing the repeating unit represented by formula (1), a pattern could not be formed, making it impossible to measure the sensitivity, the resolution of an isolated line pattern, the pattern profile, and the PEB temperature dependency. Similarly, in Comparative Example 3-4 using Resin (Ab′-4) containing the repeating unit represented by formula (A) but not containing the repeating unit represented by formula (1), the PEB temperature dependency was high in particular, the pattern profile was tapered, and the resolution of an isolated line pattern was poor.
On the other hand, in all of Examples 3-1 to 3-30 using the resin (P) containing the repeating unit represented by formula (1) and the repeating unit represented by formula (A), the resolution of an isolated line pattern was excellent, the PEB temperature dependency was low, the pattern profile was rectangular, and the sensitivity and etching resistance were high.
[Examples 4-1 to 4-30 and Comparative Examples 4-1 and 4-4; Extreme-ultraviolet Ray (EUV) Exposure, Development with Aqueous Alkali Solution, Evaluation of Isolated Line]
(8) Preparation of an actinic ray-sensitive or radiation-sensitive resin composition, pattern formation, and evaluation of the resist pattern were performed in the same manner as in Examples 3-1 to 3-30 and Comparative Examples 3-1 to 3-4 except that the patternwise exposure was performed through an exposure mask where the pattern of the exposure mask was inverted, the development was performed using an aqueous alkali solution (TMAH; an aqueous 2.38 mass % tetramethylammonium hydroxide solution) in place of the organic developer, and the rinsing solution was changed to water.










TABLE 6









Resist Composition












Photoacid

Evaluation Results



















Resin
Hydro-

Generator

Surfac-


Isolated
PEB




(mass %)
phobic
Solvent
(mass %)
Basic
tant
Sensi-

Pattern
Temperature
Etching



(mass
Resin
(mass
(mass
Compound
(0.01
tivity
Pattern
Resolution
Dependency
Resis-



ratio)
(mass %)
ratio)
ratio)
(mass %)
mass %)
(mJ/cm2)
Profile
(nm)
(nm/° C.)
tance






















Example 4-1
P-1
—
S-1/S-2
z115
N-3
W-4
14
rectangular
28.0
0.6
A



63

(80/20)
35
2


Example 4-2
P-2
—
S-1/S-2
z115
N-3
W-4
16
rectangular
30.0
0.8
A



63

(80/20)
35
2


Example 4-3
P-3
—
S-1/S-2
z115
N-3
W-4
20
rectangular
32.0
1.0
A



63

(80/20)
35
2


Example 4-4
P-4
—
S-1/S-2
z115
N-3
W-4
22
rectangular
34.0
1.2
A



63

(80/20)
35
2


Example 4-5
P-5
—
S-1/S-2
z115
N-3
W-4
25
rectangular
36.0
1.6
A



63

(80/20)
35
2


Example 4-6
P-6
—
S-1/S-2
z123
N-7
W-3
16
rectangular
22.0
0.6
A



63

(60/40)
35
2


Example 4-7
P-7
—
S-1/S-2
z114
N-9
W-4
16
rectangular
26.0
0.7
A



63

(70/30)
35
2


Example 4-8
P-8
—
S-1/S-2
z114
N-9
W-4
18
rectangular
30.0
0.9
A



63

(70/30)
35
2


Example 4-9
P-9
—
S-1/S-2
z114
N-9
W-4
20
rectangular
34.0
1.2
A



63

(70/30)
35
2


Example 4-10
P-10
—
S-1/S-2
z114
N-9
W-4
23
rectangular
38.0
1.4
A



63

(70/30)
35
2


Example 4-11
P-11
—
S-1/S-2
z39
N-10
W-1
23
rectangular
34.0
1.5
A



63

(90/10)
35
2


Example 4-12
P-12
—
S-1/S-2
z39
N-10
W-1
17
rectangular
30.0
1.2
A



63

(90/10)
35
2


Example 4-13
P-13
—
S-1
z121
N-6
W-4
21
rectangular
28.0
1.4
A



63


35
2


Example 4-14
P-14
—
S-1/S-4
z32
N-8
none
22
rectangular
30.0
1.0
A



63

(80/20)
35
2


Example 4-15
P-15
—
S-1/S-3
z5
N-9
W-3
23
rectangular
34.0
0.8
A



63

(80/20)
35
2


Example 4-16
P-16
—
S-2/S-4
z33
N-6
W-1
20
rectangular
34.0
0.9
A



63

(50/50)
35
2


Example 4-17
P-17
—
S-1/S-4
z119
N-1
W-1
25
rectangular
36.0
1.6
A



63

(70/30)
35
2


Example 4-18
P-18
—
S-1/S-2
z118
N-5
W-3
27
rectangular
36.0
1.7
A



63

(80/20)
35
2


Example 4-19
P-19
—
S-3
z11
N-4
W-2
29
rectangular
38.0
1.4
A



63


35
2


Example 4-20
P-20
—
S-1/S-3
z69/z122
N-2
W-2
30
rectangular
38.0
1.3
A



63

(70/30)
35(20/80)
2


Example 4-21
P-21
—
S-1/S-2
z127
N-3
W-3
15
rectangular
24.0
0.7
A



63

(80/20)
35
2


Example 4-22
P-1/P-22
—
S-1/S-2
z67
N-7
W-4
18
rectangular
26.0
0.9
A



63(50/50)

(70/30)
35
2


Example 4-23
P-23
—
S-1/S-2
z108
N-8
W-4
19
rectangular
28.0
1.0
A



63

(80/20)
35
2


Example 4-24
P-24
HR-1
S-2/S-1
—
N-6
W-3
22
rectangular
32.0
1.1
A



88
10
(90/10)

2


Example 4-25
P-34
HR-24
S-1/S-2
z132
N-11
W-4
20
rectangular
30.0
1.2
A



86
3
(60/40)
10
1


Example 4-26
P-35
HR-29
S-1/S-2
z133
N-12
W-4
23
rectangular
30.0
1.0
A



62
5
(80/20)
30
3


Example 4-27
P-29
—
S-2/S-1
z130
N-11
W-2
20
rectangular
28.0
1.1
A



94

(70/30)
5
1


Example 4-28
P-26
—
S-2/S-1
—
N-12
W-3
24
rectangular
36.0
1.2
A



98

(80/20)

2


Example 4-29
P-31
—
S-2
—
N-11
W-3
25
rectangular
34.0
0.9
A



97



3


Example 4-30
P-38
—
S-1/S-2
z132
N-11
W-1
24
rectangular
34.0
1.1
A



78

(70/30)
20
2


Comparative
Ab′-1
—
S-1/S-4
z119
N-1
W-1
35
reverse
46.0
1.7
B


Example 4-1
63

(70/30)
35
2


tapered


Comparative
Ab′-2
—
S-1/S-2
z118
N-5
W-3
34
reverse
48.0
1.9
B


Example 4-2
63

(80/20)
35
2


tapered


Comparative
Ab′-3
—
S-3
z11
N-4
W-2
30
tapered
42.0
3.0
A


Example 4-3
63


35
2


Comparative
Ab′-4
—
S-1/S-3
z69/z122
N-2
W-2
31
tapered
42.0
3.1
A


Example 4-4
63

(70/30)
35(20/80)
2









As apparent from Table 6 above, in Comparative Examples 4-1 and 4-2 using Resin (Ab′-1) and Resin (Ab′-2) containing the repeating unit represented by formula (1) but not containing the repeating unit represented by formula (A), the sensitivity and the resolution of an isolated line pattern were poor, the pattern profile was reverse tapered, the PEB temperature dependency was high, and the etching resistance was low. In Comparative Examples 4-3 and 4-4 using Resin (Ab′-3) and (Ab′-4) containing the repeating unit represented by formula (A) but not containing the repeating unit represented by formula (1), the PEB temperature dependency was high in particular, the pattern profile was tapered, and the resolution of an isolated line pattern was poor.
On the other hand, in all of Examples 4-1 to 4-30 using the resin (P) containing the repeating unit represented by formula (1) and the repeating unit represented by formula (A), the resolution of an isolated line pattern was excellent, the PEB temperature dependency was low, the pattern profile was rectangular, and the sensitivity and etching resistance were high.
Industrial Applicability
According to the present invention, an actinic ray-sensitive or radiation-sensitive resin composition ensuring that in the formation of a fine isolated pattern with a narrow line width (for example, a line width on the order of several tens of nm), the resolution is excellent, the PEB temperature dependency is low, the pattern profile is rectangular and the sensitivity and etching resistance are high, a resist film using the same, a pattern forming method, a manufacturing method of an electronic device, and an electronic device can be provided.
This application is based on a Japanese patent application filed on Jul. 27, 2012 (Japanese Patent Application No. 2012-167816), and Japanese patent application filed on Mar. 15, 2013 (Japanese Patent Application No. 2013-054403), and the contents thereof are incorporated herein by reference.

## Claims

1. An actinic ray-sensitive or radiation-sensitive resin composition comprising:
a compound capable of generating an acid upon irradiation with an actinic ray or radiation,
a resin (P) containing a repeating unit represented by the following formula (1) and a repeating unit represented by the following formula (A), and
a solvent:




wherein each of R′ and L1 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group, L1 may combine with L to form a ring and in this case, L1 represents a single bond, an alkylene group or a carbonyl group,
L represents a single bond or a divalent linking group, and in the case of forming a ring together with L1, L represents a trivalent linking group,
each of R1a, R1b and R1c independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or a heterocyclic group,
at least two of R1a, R1b and R1c may combine with each other to form a ring, or at least one of R1a, R1b and R1c may combine with R2 to form a ring,
R2 represents an alkyl group or a cycloalkyl group, and
R3 represents a hydrogen atom or an alkyl group;




wherein each of R21, R22 and R23 independently represents a hydrogen atom, an alkyl group, a halogen atom, a cyano group or an alkoxycarbonyl group, provided that R22 may combine with Ar2 to form a ring and in this case, R22 represents a single bond or an alkylene group,
X2 represents a single bond, —COO— or —CONR30—, wherein R30 represents a hydrogen atom or an alkyl group,
L2 represents a single bond or an alkylene group,
Ar2 represents an (n+1)-valent aromatic ring group and in the case of combining with R22 to form a ring, Ar2 represents an (n+2)-valent aromatic ring group, and
n represents an integer of 1 to 4.

2. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1,
wherein in formula (1), each of R1a, R1b and R1c is independently an alkyl group or a cycloalkyl group.

3. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1,
wherein in formula (1), R3 is a hydrogen atom.

4. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1,
wherein in formula (1), L is a single bond, a divalent aromatic group, a divalent group having a norbornylene group, or a divalent group having an adamantylene group.

5. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1,
wherein the repeating unit represented by formula (1) is a repeating unit represented by any one of the following formulae (1-1) to (1-4):




wherein in formulae (1-1) to (1-4),
R′, R1a, R1b, R1c, R2 and R3 have the same meanings as R′, R1a, R1b, R1c, R2 and R3 in formula (1), respectively, and
at least two of R1a, R1b and R1c may combine with each other to form a ring, or at least one of R1a, R1b and R1c may combine with R2 to form a ring.

6. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1,
wherein the repeating unit represented by formula (A) is a repeating unit represented by the following formula (A1) or (A2):




wherein R23 has the same meaning as R23 in formula (A).

7. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1,
wherein the resin (P) further contains a repeating unit having a lactone group.

8. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1,
wherein the resin (P) further contains a repeating unit having a plurality of aromatic rings represented by the following formula (c1):




in formula (c1), R3 represents a hydrogen atom, an alkyl group, a halogen atom, a cyano group or a nitro group;
Y represents a single bond or a divalent linking group;
Z represents a single bond or a divalent linking group;
Ar represents an aromatic ring group; and
p represents an integer of 1 or more.

9. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1,
wherein the resin (P) contains a repeating unit having a group capable of decomposing by the action of an acid in addition to the repeating unit represented by formula (1).

10. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1,
wherein the resin (P) further contains a repeating unit represented by the following formula (4):




R41 represents a hydrogen atom or a methyl group;
L41 represents a single bond or a divalent linking group;
L42 represents a divalent linking group; and
S represents a structural moiety capable of decomposing upon irradiation with an actinic ray or radiation to generate an acid on the side chain.

11. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1, wherein the total number of the carbon number of R1a to R1c is 4 or more.

12. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1, wherein at least two of R1a, R1b and R1c combine with each other to form a ring.

13. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1, wherein R1a, R1b and R1c form a polycyclic alicyclic group.

14. The actinic ray-sensitive or radiation-sensitive resin composition as claimed in claim 1, wherein the actinic ray-sensitive or radiation-sensitive resin composition further contains a hydrophobic resin.

15. A resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition claimed in claim 1.

16. A pattern forming method comprising:
(i) a step of forming a film from the actinic ray-sensitive or radiation-sensitive resin composition claimed in claim 1,
(ii) a step of exposing the film, and
(iii) a step of developing the exposed film by using a developer to form a pattern.

17. The pattern forming method as claimed in claim 16, wherein the exposure is performed using an X-ray, an electron beam or EUV.

18. A pattern forming method comprising:
(i) a step of forming a film from the actinic ray-sensitive or radiation-sensitive resin composition claimed in claim 1,
(ii) a step of exposing the film, and
(iii') a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern.

19. The pattern forming method as claimed in claim 18, wherein the exposure is performed using an X-ray, an electron beam or EUV.

20. A method for manufacturing an electronic device, comprising:
(i) providing an inorganic or coating-type inorganic substrate suitable for use in producing a semiconductor, a liquid crystal device or a circuit board,
(ii) forming a film on the substrate from the actinic ray-sensitive or radiation-sensitive resin composition claimed in claim 1,
(iii) exposing the film using an X-ray, an electron beam or EUV, and
(iv) developing the exposed film by using a developer to form a pattern on the substrate.