NBS

PUBLICATIONS

AlllOS AT1333

NBSIR 81-2224

Advancement of Reliability,

Processing and Automation for

Integrated Circuits with the

National Bureau of Standards

(ARPA/IC/NBS)

W. M. Bullis

Electron Devices Division

Center for Electronics and Electrical Engineering

National Engineering Laboratory

U.S. Department of Commerce

National Bureau of Standards

Washington, DC 20234

Final Report

March 1981

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NBSIR 81-2224

ADVANCEMENT OF RELIABILITY,

PROCESSING AND AUTOMATION FOR

INTEGRATED CIRCUITS WITH THE

NATIONAL BUREAU OF STANDARDS

(ARPA/IC/NBS)

APR 2 7 1981 c ^ ' - O fc Cia 0 0

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W. M. Bullis

Electron Devices Division

Center for Electronics and Electrical Engineering

National Engineering Laboratory

U.S. Department of Commerce

National Bureau of Standards

Washington, DC 20234

Final Report

March 1981

Prepared for Defense Advanced Research Projects Agency

Arlington, VA 22209

U.S. DEPARTMENT OF COMMERCE, Malcolm Baldrige, Secretary

NATIONAL BUREAU OF STANDARDS. Ernest Ambler. Director
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Table of Contents

Page

Preface iv

Executive Summary 1

1. Program Objective and Technical Need 3

2. Program Description and Evolution 6

3. Scientific and Technical Results and Accomplishments 9

4. Applications and Considerations for the Future 14

5. Program Impact and Assessment of Technology Developed 16

6. Bibliography of Reports 20

7. References 40

Appendix - Research Contracts Summary 42

Distribution List 43

111
Preface

In 1972/ Dr. Martin Stickley, then Director of the ARPA Materials Science

Office/ with the advice and cooperation of Dr. George Heilmeier/ then

Assistant Director of Defense Research and Engineering (Electronics and

Physical Science)/ requested Mr. Judson French/ then Chief of the NBS

Electronic Technology Division/ to develop the plans for a research program

directed toward attacking the problem of integrated circuit reliability

through in5>rovements in process controls and other means of building in

quality.

The measurement-oriented program that resulted is described in this report.

The initiation of the program received the enthusiastic support of Dr.

Stephen LukasiC/ then Director of ARPA. As time progressed and personnel

changed/ the program benefited from the advice and counsel of many

individuals: Dr. Richard Reynolds/ of the ARPA Materials Science Office

(whO/ as the ARPA Project Officer/ was directly responsible for the program

during most of its existence); Dr. l^den Bement/ later Director of the ARPA

Materials Science Office; Dr. Heilmeier and Dr. Robert Fossum during their

tenures as Director of ARPA; and Mr. Leonard Weisberg/ later Assistant

Director of Defense Research and Engineering (Electronics and Physical

Science). Their encouragement and support is gratefully acknowledged.

The program also benefited from the cooperation of many in the industry who

participated as contractors/ collaborators/ or sources of information. Their

contributions/ and those of the individual NBS researchers who conducted the

in-house work/ were essential to the program's success.

Ultimately/ the measure of success of a program such as this is the effective

utilization of the results of the research. Excuiples of such utilization are provided in the report; it is hoped that these and other unrecorded

applications have fulfilled the e}q>ectations of the forward-looking managers

who defined the need and initiated the program.

The problems addressed in this program present/ in reality, a moving target.

New advances in metrology are required to satisfy the demands of current and

projected integrated circuit technologies. NBS is seeking to meet these

needs throu^ a major initiative on Basic Measurements for Very Large Scale

Integration together with projects conducted in support of the Very High

Speed Integrated Circuit and other advanced Defense Department programs.

IV
Advancement of Reliability, Processing, and Automation for

Integrated Circuits with the National Bureau of Standards

(ARPA/IC/NBS)

W. M. Bullis

Electron Devices Division

National Bureau of Standards

Washington, DC 20234

EXECUTIVE SUMMARY

In the early 1970s, the Defense Department's long-standing problem in obtaining specialized integrated circuits which would meet its reliability

requirements at reasonable cost became more serious. It seemed clear that

procurement of reliable integrated circuits by the traditional techniques

would become increasingly more costly and difficult.

Procurement of semiconductor components for military use had traditionally

been based on performance specifications supported by tests to screen out

defective parts. By the early 1970s, this concept had been extended to procurement of integrated circuits, but there was considerable concern that the

projected increases in the level of complexity of integrated circuits would

eventually make full fault isolation by this technique prohibitively expensive both in time and money. The use of captive production lines to assure

the manufacture of specialized devices and integrated circuits with con- trolled performance characteristics and adequate reliability though effective

in special cases could not be extended broadly because of considerations of

cost and flexibility.

The program described in this report was undertaken in 1973 to develop the

measurement technology necessary to enable device manufacturers to exert more

effective control over the materials and processes they use to make

integrated circuits. It was devised to exploit and extend the ongoing NBS

research activity on semiconductor measurement technology in which

particularly effective interactions with the industry had already developed.

Rather than following the more traditional and costly approach of tested-in

reliability, this program provided a new thrust directed toward solving the

DoD problem with integrated circuit reliability by providing the means to

build in reliability in the production process, thus reducing the reliance on

screening tests or captive lines. It had as its objective the development of

methods of measurement and associated technology for use in controlling, and

ultimately automating, various key processing and assembly procedures

required for producing semiconductor devices, especially digital monolithic

integrated circuits. The program consisted of a laboratory-based research

effort; in-house studies at NBS and efforts contracted out-of-house to

industry, universities, and other government laboratories were conducted.

The program was initiated in January 1973 with a preliminary six-month

planning phase; it was funded under ARPA Order 2397 during each of the next

six fiscal years to a total level of about $10.9 million. The program ended

formally at the end of October 1979, although a few contract research

activities continued further into fiscal year 1980.

1
Work was carried out in 12 technical areas: resistivity and dopant characterization; crystal defects and contaminants; oxides and other insulator

films; physical analysis techniques; film cind layer thickness; materials

for infrared detector arrays; materials and procedures for wafer processing;

photolithography; microelectronic test patterns; wafer inspection and test;

die and interconnection bonding; and hermeticity.

Advances in measurement technology were made in each of the 60 measurement

problem areas addressed during the course of the program. These advances

were communicated to the industry through seminars and workshops/ individual

plant and agency visits, videotapes on selected measurement techniques, and

publications both in trade and archival journals and in a series of NBS re- ports on Semiconductor Measurement Technology specially established for this

program. To date, over 220 reports of work conducted as part of this program

have appeared in the technical literature; in addition, 20 progress reports were issued to provide information on the status of the research. These

publications include reports from 24 contracted research projects on a wide

variety of topics, which were carried out, usually over several years, by 10

industrial or consulting firms, three universities, and four government

laboratories

.

Timely implementation of the improved measurement technology developed in the

program has already resulted in significant improvements in device performance and reliability as well as substantial cost savings in DoD programs.

Thus, the technical feasibility of the approach chosen, providing the means

to build reliability into the production process through the development of new or improved measurement techniques for use by the integrated circuit (IC)

industry, has been demonstrated. Although most of the work was directed

toward silicon IC technologies, results have also been applied in connection

with characterization of infrared detector materials and in gallium arsenide

integrated circuit technology.

Major impacts of the work resulted from applications of these techniques by

the industry in both DoD and non-DoD programs. In addition, the results have

been beneficially applied by systems houses. Evidence of application occurs through inclusion in widely used standards, through requests for specific

items, or as a result of specific feedback which is principally anecdotal in

nature. Work is continuing in connection with the tri-service programs on Very High Speed Integrated Circuits (VHSIC); many industrial contractors in

this program are applying the results obtained to date and several are co- operating in extending the work. In addition, the concepts developed in re- gard to microelectronic test structures are being applied in connection with

the fabrication of multipurpose chips as part of a major ARPA-supported

long-range research effort on very large scale integration. Further, NBS is

undertaking a major initiative on Basic Measurements for Very Large Scale

Integration (VLSI) beginning in fiscal year 1981.

In summary, many improved measurement technologies of considerable diversity

were developed and documented during this program. The results have been

widely and beneficially applied in other DoD projects and by the U.S.

semiconductor industry. At the present time the work is being extended under

other programs to accommodate the denser circuits, larger chips, and new processing techniques associated with VLSI.

2
1. PROGRAM OBJECTIVE AND TECHNICAL NEED

1.1 Defense problem — In the early 1970s^ the Defense Department's

long-standing problem in obtaining reliable integrated circuits was aggravated hy the rapidly growing commercial market for these devices. Because

the Department's requirements share of the market was declining, it found

difficulty in procuring at reasonable cost needed specialized integrated circuits which met its reliability requirements. It seemed clear that the com- bination of high performance requirements and small market volume would

continue into the future and that procurement of reliable integrated circuits

the traditional techniques would become increasingly more costly and

difficult.

This problem was reflected in overall system effectiveness. Rear Admiral R.

J. Schneider pointed out in the keynote speech at the Navy Solid State Device

Reliability Workshop, held in July 1972, that on the average, of the 100 aircraft on a billion-dollar attack carrier, only 65 were available at any given

time. He described this situation as "one glaring example of how poor reliability affects operational effectiveness."^ The poor performance records

of some very costly aircraft and missile systems had been ait5)ly documented.

Military avionics was achieving only 10 percent of targeted reliability,

and high failure rates had long been commonplace.^

A related problem area was the high cost of maintaining systems in the field.

Failure is expensive; the annual cost to the DoD for maintenance of electronic equipment was estimated at $5 billion. For one type of DoD electronic

equipment, 72.8 percent of the field failures were attributable to integrated

circuits. Even the simplest con^jonent failure in the field has been found to

cost the military a minimum of $300.^

1.2 State of the art at inception of program — Procurement of semiconductor

conponents for military use had traditionally been based on performance specifications supported by tests to screen out defective parts. This approach,

thouc^ expensive and frequently avoided through the use of waivers, had had

demonstrated effectiveness when properly applied in the procurement of passive components, diodes, and transistors. By the early 1970s, the initial

resistance to its extension to procurement of integrated circuits had been

largely overcome. Nevertheless, there was considerable concern that the projected increases in the level of complexity of integrated circuits would

eventually make full fault isolation by this technique prohibitively expensive both in tiiTie and money.

During this time, several strategic system projects were utilizing captive

production lines to assure the manufacture of specialized devices and

integrated circuits with controlled performance characteristics and adequate

reliability. This alternative approach, though effective in special cases,

could not be extended broadly because of considerations of cost and

flexibility.

Other solutions to the problem were being sought. At the request of the

Office of Defense Research and Engineering, an ad hoo committee of the

National Materials Advisory Board investigated yield and materials problems

in the manufacture of electronic components. While the reports of this

3
committee^ and its subsidiary yield panel^ indicated the need to improve

existing procurement, screening, and acceptance procedures, they also emphasized the immense benefits which could be obtained through improved processes

and in-process measurements, leading to upgraded yields, quality, and reliability throughout the electronics industry. In particular, they concluded

that: "the impact of an organized progreun to make in-process measurements

(for the manufacture of silicon semiconductor devices) could be truly

immense. All aspects of the electronics industry would be upgraded by higher

yields, quality, and reliability. The increased understanding of device

processing would allow pursuit of goals that are presently unattainable

because of geometrical or reliability limitations (microwave, displays,

memories, etc.)."'^ The workshop on Solid State Device Reliability reached

generally similar conclusions.^

Research and development programs underway in several government agencies

were closely related to this problem. The National Bureau of Standards had

for some time been concerned with measurement technology for semiconductor

devices.® Even before it was formalized in 1968, the NBS Semiconductor

Technology Progrcua had been directed toward the enhancement of the

performance, interchangeability, and reliability of semiconductor devices and

the promotion of economy in their procurement through improvements in methods

of measurement for the specification of materials and devices cuid for the

control of device fabrication and assembly processes. This program had

developed particularly effective interactions with the industry, both in

defining and in disseminating the results of research projects and also had

worked closely with the staff of a strategic systems project office to

implement critically needed techniques for controlling the wire bonding

process.

During FY-1973, the Naval Electronics Systems Command and the Naval

Electronics Laboratory Center entered into contracts with three integrated

circuit (IC) manufacturers to define research efforts directed toweurd

in^rovement of IC reliability and manufacturing science (ICRMS). These

efforts were expected to encompass the use of new manufacturing technologies

as well as diagnostic and prediction techniques for control of IC processes.

A NASA effort on line certification which had been underway at the Marshall

Space Flight Center for a number of years applied most of the existing tools

for control of processes. The experience gained in connection with line

certification provided a valuable base on which to build further work on test

methodology. By 1973, NASA had consolidated much of its process- directed

research and development activity into an overall project at the Jet

Propulsion Laboratory intended eventually to lead to automated production of

devices with predictable service life.

Finally, during the early 1970s, the Defense Advanced Research Projects

Agency (ARPA) sponsored several fairly basic research efforts related to

properties of thin insulating films including those characteristic of films

used in metal-insulator-semiconductor (MIS) devices and a study of

process-induced damage in silicon wafers. These projects, the last most

directly, related to the question of device quality and understanding of

device characteristics.

4
1.3 Specific technological problem addressed — The program described in

this report was undertaken in 1973 to develop the measurement technology

necessary to enable device manufacturers to exert more effective control over

the materials and processes they use to make integrated circuits. It was devised to ejq>loit and extend ongoing NBS research activity on semiconductor

measurement technology. Rather than following the more traditional and

costly approach of tested-in reliability# this program provided a new thrust

directed toward the goal of built-in reliability through design, control of

fabrication, and automation.

1.4 Anticipated payoff — This program was ejected to assist in solving the

DoD problem with integrated circuit reliability by providing the means to

build in reliability in the production process, thus reducing the reliance on screening tests or captive lines. The program was to provide these means by

developing new and improved process measurement techniques for use by the

integrated circuit industry to achieve greatly in5>roved control over material

and device fabrication processes. These new controls would enable the nianufacture of devices with narrower parameter distributions, and in5> roved

yields, reliability, and performance at lower cost. In the course of developing new process measurement and control techniques, the level of understanding of the intricacies of semiconductor processing would be greatly

enhanced, leading to a considerable replacement of art by science in this

field. Thus, this approach was seen as new, important, eind viable.

The program was originally projected to cover a five-year period beginning in

July 1973; the total cost was originally estimated to be in the range of $15

to $18 million. As actually carried out, the program was initiated in

January 1973 with a preliminary six-month planning phase; it was funded

under ARPA order 2397 during each of the next six fiscal years to a total

level of about $10.9 million. The program ended formally at the end of

October 1979, although a few contract research activities continued further

into fiscal year 1980.

5
2. PROGRAM DESCRIPTION AND EVOLUTION

2.1 Program structure and plan — This program had as its objective the

development of methods of measurement 2md associated technology for use in

controlling, and ultimately automating, various key processing and assembly

procedures required for producing semiconductor devices, especially digital

monolithic integrated circuits. The program consisted of a laboratory-based

research effort leading to practical output of methods cuid doc\imentation for

on-line use by the semiconductor integrated circuit manufacturer, his suppliers, and his customers. Both in-house studies at NBS and efforts

contracted out-of-house to industry, universities, and other government

laboratories were utilized.

Initially, an extensive field survey of the measurement needs of the semiconductor industry was conducted to assist in the selection of specific technical topics to be emphasized in the program. It is interesting to note that

the items identified in this field survey were in general very similar to

those identified to be controlled by the contractors in the Navy's ICRMS

program, mentioned previously. Additional input was obtained in the first of

a series of workshops designed to facilitate two-way communications between

the Program and the industry.

Other communication mechanisms included individual plant and agency visits,

preparation of videotapes on selected measurement techniques, publications in

trade and archival journals, and, in particular, establishment of a subseries on Semiconductor Measurement Technology as part of the NBS Special Publication series. Of the 63 reports published to date in this subseries, 11 were progress reports, 32 were reports of ARPA-sponsored research, and four were reports of ARPA/NBS workshops; the remaining 16 were reports of work or workshops sponsored by NBS or other agencies. Two of the three videotapes

prepared covered ARPA-sponsored work.

During the course of the program, 24 contracted research projects* on a wide

variety of topics were carried out, usually over several years, by 10

industrial or consulting firms, three universities, and four government

laboratories. In addition, several NBS divisions (other them the Electron

Devices Division, previously the Electronic Technology Division, where the

bulk of the in-house effort was carried out) participated in selected

portions of the program.

2.2 Major technical problems and approaches — specific technical topics

selected for attention covered key processing and assembly steps, from con- trol of incoming materials to evaluation of electrical characteristics and

packaging. The comprehensive nature of this program, from starting materials

through processing procedures to devices and from review of the

state-of-the-art through the necessary research and development to practical

application, permitted problems to be approached in a manner significantly

different from that usually employed and led to rapid development and application of improved measurement methodology.

* A summary of research contracts issued during the program is provided in

Appendix A.

6
Initially/ work was undertaken in the following technical areas:

Resistivity and Dopant Characterization

Crystal Defects and Conteuninants

Oxides and Other Insulator Films

Microelectronic Test Patterns

Photoresist

Film and Layer Thickness

Photomask Inspection

Wafer Inspection and Test

Die and Interconnection Bonding

Hermeticity and Residual Gas Analysis

In addition, activities were undertaken to in5>rove in-house wafer processing

capabilities and to establish improved methods for communicating with the

industry (for both planning and dissemination purposes as noted in the previous subsection)

As the program developed, the work on oxides and other insulator films was extended to include stu<ty of a broad range of physical analysis methods. In

addition, several projects related to materials and procedures for wafer processing were carried out, a relatively small laboratory effort was undertaken

related to characterization of infrared detector materials, and consultation

was provided to ARPA contractors regarding application of test structures and

measurement techniques to the characterization of gallium arsenide. Major

efforts were concentrated on development of optical methods for measuring

linewidths (in the 0.5- to 10-ym range) in patterns on photomasks and wafers

(an outgrowth of the initial work on photomask inspection) and on development, evaluation, and implementation of microelectronic test structures, the

last frequently in concert with DoD agencies other than ARPA.

The general approach to the development of iir^rovements in measurement methods began with identification of problem areas. This occurred as a result of

contacts with military or other government agencies, participation in standards committees, or visits to or other contacts with industry. Once a problem area had been selected, the status of the field was determined through

direct consultation, standards-committee activity, and literature search.

The results of this determination were used in the planning of detailed steps

toward solving the problem. Many times they also served another inqportant

function by forming the basis of a critical review, bibliography, or other

survey report which had considerable value in communicating to the

community-at-large the present status of a measurement area.

The steps toward solution of the problem involved a combination of laboratory

investigation, standards-committee activities (including cooperative roundrobin e:q>eriments ) , review and inclusion of work carried on elsewhere, and

direct interaction with industry through visits, sponsors, or standards com- mittees. As the work progressed, the information and techniques which re- sulted were disseminated as widely as possible. Use of interim results frequently iitproved manufacturing or measuring procedures; an inportant part of

the work involved assistance to the industry, through training programs and

other means, in incorporating and benefiting from these results at the earliest possible time. Ultimately, the results of the work were incorporated

7
into standard test methods or procedures. One very important aspect of the

program was reduction of duplication of effort through the widest possible

dissemination of the results achieved in-house and reported by others.

8
3. SCIENTIFIC AND TECHNICAL RESULTS AND ACCOMPLISHMENTS

Advances in measurement technology were made in each of the 60 measurement

problem areas addressed during the course of the program* These were summarized in comprehensive progress reports (21a, 22/23a, 24a, 25a, 26a,

27/28a, 29/30a, 31/32a, 33a, 34/35a, 36/37a)* which cover the period between

1 July 1973 and 30 September 1977 and in progress briefs (38a, 39a, 40a, 41a,

42a, 43a, 44a, 45a, 46a) which cover the period between 1 October 1977 and 31

December 1979. In most cases, the results are more completely described in

over 220 separate technical reports and articles, which are listed in section

6 .

A brief listing of the various advances achieved follows with references to

the more detailed reports and, in selected instances, other comments. Work

is continuing in many of the technical areas addressed during this program.

Information concerning on-going research activity is provided in the reports.

Semiconductor Technology Program, Progress Briefs, which are issued about

four times a year in the NBSIR series. A complete listing of publications

which are available for unlimited distribution is provided in NBS List of

Publications 72, Semiconductor Measurement Technology, which is revised

annually in order to provide a complete record of NBS publication on Semiconductor Measurement Technology for the period up to the revision date.

A. Program Planning and Dissemination

(1) Initial workshop on IC measurement problems: 2n

(2) Initial review of trends in automated processing and assembly

(contract 4-35807 to A. D. Little, Inc.): C15o

(3) General report on program content: 21o

B. Resistivity; Dopant Characterization

(1) Interlaboratory test for stability of and long-term precision

attainable with standard reference wafers for four-probe resistivity

measurements : t (2) Surface preparation procedures for spreading resistance measurements: 15b, 20b (Additional results, obtained under Department of

Energy sponsorship, may be found in references 7-9.)

(3) Algorithms for analysis of spreading resistance measurements

(partially carried out under contract 5-35881 to Solecon Labs):

31b, 42b, 44b, §

* Codes identify reports and other publications listed in section 6, Bibliography of Reports. The codes are identical with those used in NBS List of

Publications 72. Codes beginning with ”C" refer to publications prepared

by contractors. Codes beginning with "N" refer to publications prepared by

staff of other NBS divisions. Codes beginning with "R" refer to documents

with restricted distribution; such documents are not listed in LP 72.

t Reported only in progress reports

§ Additional publications reporting work conducted at NBS in press or anticipated

9
(4) High-speed spreading resistance probe (contract 5-35914 to RCA

Labs): C30b

(5) Impurity redistribution during thermal oxidation of silicon; 16b#

29b

(6) Algorithms for interpreting capacitance-voltage measurements of

dopant profiles; 17b, 22b

(7) Con5>utation of carrier mobilities in silicon (partially conducted

under contract 7-35741 to University of Florida); 18b, 21b, C27b,

C33b, %

(8) Re-evaluation of resistivity-dopant density relationships in silicon: 25b, 39b, 43b, § (This project also involved development of

the planar square array four-probe test structure for resistivity

measurements; 19b, 5g; development of the nuclear track technique

for measurement of boron in silicon: 20d; and conqparison of several

techniques for measurement of phosphorus in silicon: 36b*

)

C* Crystal Defects and Contaminants

(1) Deep- level measurements; 14c, 17c, 18c, 27c, 28c, 30c, 31c, 36c,

38c, 39c, 40c, 41c (Additional results, obtained under Department

of Energy and NBS sponsorship, may be found in references 10-13*)

(2) Defect density profiling technique (order 809074 to Xerox Palo Alto

Research Center) ; C35c, 1

D* Oxides and Other Insulator Films

( 1 ) Extended-range MIS capacitance-voltage euid conductance-voltage technique (contract 5-35912 to RCA Laboratories): C19c, C20c, C21c,

C22c, C23c, C24c, C25c, C26c, C33c (An application of the technique, partially supported by another DoD agency: C211*)

(2) Bias-temperature stress test for oxide stability: t

E* Physical Analysis Techniques

(1) Surface analysis techniques; 3d, 7d

(2) Surface analysis workshop: 6n

(3) Electron spectroscopy techniques on sputter Auger profiling of the

silicon-silicon dioxide interface (contract 5-35944 to Stanford

University); C2d, C4d, C5d, C6d, C8d, C9d, ClOd, Cl Id, C13d, C15d,

Cl6d, Cl7d, C21d, C22d, V23d, C24d, C27d, C29d, C32d, C33d, C35d,

Cl3e, C14e, C22e, %

(4) Optical reflectance methods for characterizing surface quality of

sapphire substrates and surface damage of silicon (contract 5-35915

to RCA Laboratories): Cld, C19d, C30d, C38d

(5) X-ray photoelectron spectroscopy of clean silicon surfaces: NlS^jd

(6) X-ray photoelectron spectroscopy of the silicon-silicon dioxide

interface (order 611377 to Jet Propulsion Laboratory): C18d, C26d,

C36d, C37d, C42d, C321, C331, f

\ Additional publications reporting work conducted by contractor in press or anticipated

§ Additional publications reporting work conducted at NBS in press or anticipated

t Reported only in progress reports

10
(7) Calibration standards for ion microprobe mass analysis (contract

5-35917 to Texas Instruments Central Research Laboratory): C14d,

C31d

j F. Film and Layer Thickness

I (1) MOS capacitance methods for epitaxial layer thickness: t

j[ G. Materials for Infrared Detector Arrays

(1) X-levels in indium-doped silicon: 24b, 38b, R32c

(2) Characterization of extrinsic silicon: 23b, 40b, 41b, R37c, §

1 i

l|i H. Materials and Procedures for Wafer Processing

|li

\ (1) Measurement techniques for purity of process chemicals (contract

5-35717 to Penn State University): C4e, Cl6e

(2) Dose measurements for ion implantation (contract 5-35891 to Hughes

Research Labs): C7e, C12e

!i (3) Alignment effects on implantation profiles (contract 5-35891 to

I Hughes Research Labs): C2e, C6e, 15e, 20e, 23e, 25e, %

! (4) Implantation profiles (contract 5-35891 to Hughes Research Labs euid

j orders 708041 and 801846 to Naval Research Lab): C21e, C27e, C28e,

I C30e, §, %

(5) Nondestructive test for integrity of passivation overcoats (contract

5-35913 to RCA Laboratories): Cl2j, Cl5j, C22j

(6) Improvements to NBS wafer fabrication facility: 17e

I (7) Process-induced radiation effects: 171, 241, 251, 261, 281, 291,

'! 301

I. Photolithography

(1) Photoresist sensitometry: 3e, 8e, 24e, 29e

(2) Comparisons of automated photomask inspection techniques (orders

408726, 503183, and 602156 to Lawrence Livermore Laboratory): If,

I 15f, 17f

i (3) Optical linewidth measurements in the 0.5- to 10-ym range (significant funding also provided by NBS): N2f, N3f, N5f, N6f, 7f, N9f,

NlOf, Nllf, N12f, N13f, Nl4f, 16f, 19f, 21f, 22f, 23f, 24f, 25f,

27f, § (Initial results on semitransparent photomasks, carried out

with NBS sponsorship may be found in reference 14.)

(4) Linewidth measurement by diffraction pattern analysis (contract

j 5-35890 and order 702980 to Recognition Systems Incorporated): C4f,

C26f

t Reported only in progress reports

II Additional publications reporting work conducted by contractor in press or anticipated

§ Additional publications reporting work conducted at NBS in press or anticipated

11
J. Microelectronic Test Patterns

(1) General applications: 1g, 6g, 7g, 8g, lOg, 17g, 20g, 23g, 28g, 32g,

33g

(2) Test pattern workshop; 5n

(3) Test patterns designed for use in re-evaluating resistivity-dopant

density relationships in silicon (NBS-3 and NBS-4): 3g, 4g, 16g

(4) Test patterns for CMOS/SOS LSI process (contract 5-35916 to RCA

Laboratories); Cl2g, C29g

(5) Test patterns for probe card evaluation; 19g

(6) The circular charge-coupled device as a microelectronic test structure (order 502498 to Naval Electronics Laboratory Center): C2g

(7) Modular array concept; 24g, 27g

(8) Sheet resistor test structures; 9g/ 14g, 15g

(9) Application of the cross-bridge sheet resistor test structure for

evaluating linewidth variations associated with mask fabrication and

wafer processing; t (Additional results, carried out with AFAL

sponsorship, may be found in reference 15.)

(10) Production-compatible potentiometric electrical alignment test

structure; 11g, 25g

(11) Design and initial testing of integrated gated-diode-electrometer

test structure for measurement of leakage current, generation lifetimes, etc. (contract 6-35766 to Westinghouse Defense and Electronic

Systems Center); 21g, ^ (Additional results, carried out with CSDL

(Navy) sponsorship, may be found in reference 16.)

(12) MOSFET profiler for measuring dopant profiles by means of a conventional wafer prober with dc instrumentation: 13g, 18g, 30g

(13) Random fault test structures; t

K. Wafer Inspection and Test

(1) Automated scanning low energy electron probe (orders 501718, 602542,

and 711782 to Naval Research Laboratory): C25d, C28d

(2) Dual wavelength laser-source flying-spot scanner: 4j, 5j, 6j, 10 j,

llj# 14 j, 21 j (Results of later extensions, under Department of

Energy sponsorship, to the study of large-area photovoltaic solar

cells may be found in reference 17.)

(3) Scanning electron microscopy (contract 4-35897 and order 513840 to

Hi Rel Labs; 16

j

(4) Use of the SEM in the electron-beam-induced-current (EBIC) mode:

7j» 8j, 9j, 13j

(5) Basic investigations of scanning acoustic microscopy (contract

5-35899 to Stanford University); Cl8j, C23j, C24j, C29j, C33j,

C34j, C36j

(6) Development of scanning acoustic microscopy in an industrial

environment (contract 5-35898 to Hughes Research Labs); C17j, C19j,

C25j, C27j, C28j, C30j, C31j, Cl6o, 1

t Reported only in progress reports

1 Additional publications reporting work conducted by contractor in press or anticipated

12
L* Die and Interconnection Bonding

(1) Thermal response technique for die attach evaluation; t (2) Ultrasonic wire bonding mechanisms and process monitor tests: llh,

12h, 16h (A summary of results obtained prior to the inception of

this program may be found In reference 18*)

(3) Wire bond pull tests (destructive and nondestructive); 17h, 18h (A

summary of results obtained prior to the inception of this program

may be found in reference 19.)

(4) Acoustic emission techniques for evaluating bond integrity; 14h,

15h, 20h

M. Hermeticity and Moisture Measurement

(1) Relationship between moisture infusion and device reliability (contract 5-35880 to Martin Marietta - Orlcindo) ; C4i, C5i

(2) Hermeticity and moisture measurement workshops: 3n, § (3) Interlaboratory evaluation of radioisotope leak test; 3i

(4) Dry-gas gross leak tests; t (Additional results, obtained with NBS

funding, may be found in reference 20.)

t Reported only in progress reports

§ Additional piablications reporting work conducted at NBS in press or anticipated

13
4. APPLICATIONS AND CONSIDERATIONS FOR THE FUTURE

4.1 Conclusions of technical feasibility — In this Program many improved

measiirement technologies of considerable diversity were developed and documented. As discussed in greater detail in the following section# timely

inclementation of some of these technologies has alrea<^ resulted in significant inprovements in device performance and reliability as well as substantial cost savings in DoD programs. Thus# the technical feasibility of the

approach chosen, providing the means to build reliability into the production

process through the development of new or in^roved measurement techniques for use by the integrated circuit industry, has been demonstrated.

4.2 Additional R&D requirements and opportunities — Recent trends in integrated circuits have been toward very large scale integration with

greater con5>lexity, larger device density, smaller feature size, and larger

chip size. These trends, together with shifts toward new process technologies, have resulted in still greater demands on the technology for dimensional measurements, materials characterization, and other types of measurements for control of fabrication and assembly processes. Consequently,

despite the progress made during the course of this Program, many measurement

problems remain to be solved.

NBS is continuing work on optical linewidth measurements in the 0.5- to 10-ym

range and on microelectronic test structures as part of the Defense

Department's program to develop very high speed integrated circuits (VHSIC).

Implementation of the results obtained in these and other project areas will

assist VHSIC contractors in the efficient fabrication of chip sets for the

VHSIC program. Other opportunities to both apply and extend this work will

occur in the ARPA Ultra High Speed Integrated Circuit Program. NBS staff are presently engaged in preliminary activity associated with selected parts of

this ARPA Program.

In addition, the Commerce Department has undertaken an initiative on Basic

Measurements for Very Large Scale Integration (VLSI) in the NBS Electron

Devices Division beginning in fiscal year 1981. This initiative is intended

to provide the same types of technical outputs as the ongoing Semiconductor

Technology Program, extended to accommodate the denser circuits, larger

chips, and new processing techniques associated with VLSI. Although rather

detailed preliminary plans have been developed, ^2 it is essential to

en5>hasize that considerable flexibility is required in order to enable the

program to respond to industry requirements as they develop. It is also

important to realize that, as has been done in the NBS Semiconductor

Technology Program heretofore, many of these activities involve much more

than sin5>ly finding a way to make a measurement. Fundamental work to develop

a clear understanding of the basis for the measurement cind its range of

utility is often required as well. The augmented program will address the

following key issues in six critical areas.

Silicon characterization ; methods for profiling the distribution of

dopant impurities, especially in shallow, low-dose ion in^lantations ; methods

for characterizing nondopant or deep-level impurities and resolution of

differences between results obtained by various methods; identification of

14
appropriate parameters to be specified for substrate wafers; and techniques

for characterizing wafer surface distortion.

Interface characterization ; methods for measuring neutral trap densities eind distributions near silicon-silicon dioxide interfaces; techniques

for characterizing the structural and electrical properties of this and other

device interfaces; techniques for evaluating multilayer metal interconnect

systems; and methods for measuring contact resistance at the

interconnect-semiconductor interface.

Process control metrology ; methods for measuring linewidth and edge

quality in small features with large aspect ratio (height to width); measures

for sensitometry and other attributes of resists; and metrology associated

with control of processes such as plasma etching, ion in5>lantation, laser

annealing, and ion milling.

Microelectronic test structures : scaling to VLSI dimensions of test

structures for measuring material characteristics, pattern definition and

registration, and random fault densities and distributions; test structures

with integral signal processing circuitry; correlations between test structure characteristics and device or circuit properties; and <^namic and reliability test structures.

Package evaluation ; methods for measuring device ten5>erature and package heat transfer characteristics; methods for evaluating mechanical integrity; and tests for hermeticity and internal moisture levels.

Testing; models for fault mechanisms; this portion of the effort is

e;q>ected to link with other NBS programs being developed to address broader

aspects of testing complex integrated circuit chips and systems.

15
5. PROGRAM IMPACT AND ASSESSMENT OF TECHNOLOGY DEVELOPED

Uie results of this effort were a wide variety of we11- documented processing

practices, controls, and measurements for use on production lines throughout

the silicon device industry. Major impacts of the work resulted from applications of these techniques by the industry in both DoD and non-DoD programs.

In addition, the results have been beneficially applied by systems houses.

Evidence of application occurs through inclusion in widely used standards,

through requests for specific items, or as a result of specific feedback

which is principally anecdotal in nature; the following excunples are representative of those collected during the course of the program. It should be

realized that some of the most recently achieved results have not yet been

applied to the fullest extent and that reports of additional use of old, as well as new, results are continuing to be received at frequent intervals.

® The silicon resistivity standards have been widely used throughout the

industry; through September 1979, 114 sets of SRMs 1520 and 1521 and 20

of 1522 had been sold, fully depleting current stock. In 1980, 110 sets

of SRMs 1521 and 1522 and 50 sets of 1523 will be certified based on procedures developed in this program. These reference standards are being used both for calibrating four-probe test sets and the newer contactless resistivity meters now finding greater use in the industry.

° The surface preparation procedures for spreading resistance measurements

have been incorporated into standards whose development by ASTM Committee

F-1 on Electronics is now nearing completion.

° The revised resistivity-dopant density relationships are being

incorporated in ASTM standards, now under developnent by ASTM Committee

F-1, which will replace data long used by the industry.

o The computer program developed at NBS to evaluate electrical properties

of extrinsic silicon and used as a critical element in the study of

X- levels in indiiun- doped silicon, is in active use at Roclcwell

International; the progrcim has also been requested by Hughes Aircraft

Con^jany, Honeywell, Air Force Materials Lab, Army Night Vision Lab, Jet

Propulsion Lab, and University of Cincinnati.

° Rockwell International has routinely applied the room temperature

spreading resistance profiling method for measuring uniformity of indium

density in silicon wafers following NBS demonstration of the value and

suitability of this method.

° The Air Force Materials Laboratory used NBS-determined Hall effect data on indium-doped silicon to test the validity of their Hall-analysis

con^uter program; the NBS data are a saunple data set of unquestioned

reliability for which the correct analysis results are known. The scune data were also supplied to IBM for a similar type of euialysis.

° Both equipment manufacturers and users recognized the importance of

utilizing the principles developed in the work on Dose Measurements for

Ion Implantation, performed at Hughes Research Laboratories under

contract, to obtain adequate control of the implantation process.

16
The work on Angular Sensitivity of Controlled Implanted Doping Profiles

(jointly carried out at NBS and Hughes) has led to a follow-on project

supported by the Naval Ocean Systems Center at NBS to evaluate

experimentally the junction depth of selected implants as a function of

implant angle.

Results of calculations of radiation levels associated with advanced

lithographic and patterning techniques were used by the DoD VHSIC

Lithography Committee as background material for developing a program to

understand the radiation damage associated with x-ray and e-beam

lithography.

Fifty-seven persons representing 50 organizations (microscope, photomask,

and integrated circuit manufacturers) participated in the first two

training seminars held to describe NBS-developed procedures for measuring

1- to 10- ym wide lines on IC photomasks. At least two attendees followed

up their participation by conducting mini-seminars at their own companies

to transmit the information to coworkers. Also, at least one microscope

manufacturer has modified the instruction manuals for its image-shearing

measurement system to correspond with the NBS procedures. Continued

interest has led to the conduct of two additional seminars in 1980,

accommodating over 70 more persons and the scheduling of a seminar on the

West Coast in the spring of 1981.

Many companies, including Burroughs, IBM, MOSTEK, Motorola, Siliconix,

Hewlett-Packard (H-P), Vickers Instruments, Rockwell International,

Western Electric, and Zeiss are currently using the linewidth measurement

procedures developed by NBS.

Ten companies, IBM, H-P, Vickers, ITP, Roger K. Sherman Co., Rockwell,

National Semiconductor, Siliconix, Electromask, and Qualitron,

participated with NBS in a collaborative experiment to establish the

validity of a photomask-like linewidth standard (NBS SRM 474) and

associated measurement procedures; many other companies expressed

interest in participating in this experiment but could not be

accommodated because it was not possible to calibrate enough test

specimens before the experiment began.

A linewidth measurement system based on the NBS scanning photometric

microscope system is now available commercially.

One or more of the mask sets for the three earliest test patterns

developed in the program (NBS-2, NBS-3, and NBS-4) have been released to

nearly 95 industrial, government, and academic organizations which have

employed them in setting up process lines and for troubleshooting certain

processing problems. Organizations which obtained these test patterns

include Sandia Laboratories, Texas Instruments, Fairchild, MOSTEK, H-P,

Tektronix, RCA, National Semiconductor, Motorola, Honeywell, Night Vision

Lab, MIT, TRW, and Hughes.

Tapes for test pattern NBS- 15 for electrical measurement of photomask

alignment have been sent to some eight companies including Texas

17
° Instruments, Motorola, Westinghouse, MOSTEK, Intel, Hughes, Fairchild,

and National Semiconductor.

° Test structures developed and evaluated in the program have been widely

adapted for in-house process development. Applications include gallium

arsenide integrated circuits, silicon LSI circuits, bubble memory

devices, SOS LSI circuits, radiation-hardened CMOS total dose test

progreun, thin-film strain gages, and tin-oxide technology.

o RCA has utilized the spatial integrity test structure concept, developed

under contract at RCA Labs, in connection with its SOS LSI manufacturing

operations.

° At the request of the Air Force Weapons Laboratory, the design of the

integrated gated diode electrometer test structure was supplied to Harris

Semiconductor for use in a radiation-hardened CMOS total dose assurance

program.

° Follow-on programs to develop and apply test structure concepts are being

conducted in conjunction with the Air Force Avionics Laboratory (test

patterns NBS-16 and NBS-26 for a radiation-hardened silicon-gate CMOS/SOS

process), the Charles Stark Draper Laboratory (integrated gated-diode

electrometer, MOSFET dc profiler, and other test structures as applied to

a Navy radiation-hardened CCD development project), and the ARPA Ultra

High Speed Integrated Circuits Program (test structures for CMOS/SOS

process )

.

o The dual wavelength laser-source flying spot scanner has been adapted by

the Hughes Aircraft Company and, in its modified form, replicated by the

Solar Energy Research Institute and several Department of Energy

contractors in the solar photovoltaic program.

o The scanning electron microscope procedures developed under contract at

Hi Rel Laboratories are cited in MIL-STD-1580 and were used in training

seminars conducted in conjunction with the Fifth Annual Advanced

Techniques in Failure Analysis Synposium held in Los Angeles in October

1979.

° The destructive bond pull tests in MIL-STD-883B and MIL-STD-750B eind the

nondestructive bond pull test in MIL-STD-883B are based on ARPA-supported

work at NBS.

° Two ASTM standards covering destructive and nondestructive wire bond

tests resulted from the ARPA-supported work and are in use by the

industry.

o Ribbon wire, initially developed in a previous ARPA-supported NBS

project, was demonstrated to be superior for certain bonding

applications; Cermet Division of Bala Electronics Corp. issued in the summer of 1978 a technical information report on bonding ribbon wire to

thick film copper extracted directly from an NBS Progress Report. Also,

a major semiconductor manufacturer has qualified a ribbon-wire process

for some high-reliability programs.

18
° Equipment makers have incorporated results of NBS wire-bonding work in

the design of new products. For example, Kulicke and Soffa (bonding

machines). Small Precision Tools (bonding tools), Sterndent Metals

(bonding wire), and Unitek (bond pullers) all have adopted appropriate

results.

° During an NBS-coordinated and analyzed ASTM interlaboratory experiment, a major design fault was found in the automated destructive-nondestructive

bond pull tester most widely used for testing high reliability devices.

The manufacturer redesigned (following NBS suggestions) and retrofitted

all of the thousand or so units in the field so that they could be used

for pull testing in accordance with MIL-STD-883B and MIL-STD-750B.

° Application of the results of the wire-bonding work in military programs

has led to yield increases by factors of 2 to 35 at the bonding step,

avoided 3- to 6-month delays in programs, and saved millions of dollars

in several high reliability programs. In addition, these results made

possible construction of large hybrid circuits (with >500 bonds) which

are essential to several programs.

° No field failures due to faulty wire bonds have been reported in several

DoD programs which employed the NBS-developed bond test procedures.

° A major computer company has in^lemented 100-percent testing of some production thermal compression bonds in connectors using acoustic

emission methods developed at NBS.

° General Dynamics is referencing NBS-developed information on an acoustic-emission bond-fatigue test in qualifying tape-bonded devices for

a missile program.

° Ten organizations (including IBM, Motorola, IsoVac, Hughes, TRW,

Fairchild, Burroughs, and Lockheed) participated in an NBS-coordinated

interlaboratory test to improve radioisotope leak test procedures. This

test both demonstrated that such interlaboratory tests were feasible for

leak testing methods and resulted in an order of magnitude increase in

the precision of the measurement.

° Modifications to seal tests in MIL-STD-750B and MIL-STD-883B were made

based on NBS work.

These applications serve to illustrate the broad and comprehensive nature of

the impact that the program has achieved.

19
6. BIBLIOGRAPHY OF REPORTS*

a. Progress Reports

21a Semiconductor Measurement Technology, Quarterly Report, July 1 to

September 30, 1973, W. M. Bullis, Ed., NBS Spec. Publ. 400-1 (March

1974).

22/23a Semiconductor Measurement Technology, Combined Quarterly Report,

October 1, 1973 to March 31, 1974, W. M. Bullis, Ed., NBS Spec. Publ.

400-4 (November 1974).

24a Semiconductor Measurement Technology, Progress Report, April 1 to

June 30, 1974, W. M. Bullis, Ed., NBS Spec. Publ. 400-8 (February

1975).

25a Semiconductor Measurement Technology, Progress Report, July 1 to

September 30, 1974, W. M. Bullis, Ed., NBS Spec. Publ. 400-12 (May

1975).

26a Semiconductor Measurement Technology, Progress Report, October 1,

1974 to December 31, 1974, W. M. Bullis, Ed., NBS Spec. Publ. 400-17

(November 1975).

27/28a Semiconductor Measurement Technology, Progress Report, January 1 to

June 30, 1975, W. M. Bullis, Ed., NBS Spec. Publ. 400-19 (April

1976)

.

29/30a Semiconductor Measurement Technology, Progress Report, July 1, 1975

to December 31, 1975, W. M. Bullis, Ed., NBS Spec. Publ. 400-25

(October 1976).

31/32a Semiconductor Measurement Technology, Progress Report, January 1,

1976 to June 30, 1976, W. M. Bullis, Ed., NBS Spec. Publ. 400-29

(April 1977).

33a Semiconductor Measurement Technology, Progress Report, July 1 to

September 30, 1976, W. M. Bullis and J. F. Mayo-Wells, Eds., NBS

Spec. Publ. 400-36 (July 1978).

34/35a Semiconductor Measurement Technology, Progress Report, October 1,

1976 to March 31, 1977, W. M. Bullis, Ed., NBS Spec. Publ. 400-38

(November 1979).

* The codes used in this section are identical with those used in NBS List of

Publications 72. This document is revised annually in order to provide a complete record of NBS publication on Semiconductor Measurement Technology

for the period up to the revision date. Codes beginning with "C" refer to

publications prepared by contractors. Codes beginning with "N" refer to

publications prepared by staff of other NBS divisions. Codes beginning

with "R" refer to documents with restricted distribution; such documents

are not listed in LP 72.

20
36/37a Semiconductor Measurement Technology, Progress Report, April 1, 1977

to September 30, 1977, W. M. Bullis, Ed., NBS Spec. Publ. 400-45

(August 1980).

38a Semiconductor Technology Program, Progress Briefs, October 1, 1977 to

December 31, 1977, W. M. Bullis, Ed., NBSIR 78-1444 (March 1978).

39a Semiconductor Technology Program, Progress Briefs, January 1, 1978 to

March 31, 1978, W. M. Bullis, Ed., NBSIR 78-1444-2 (July 1978).

40a Semiconductor Technology Program, Progress Briefs, April 1, 1978 to

June 30, 1978, W. M. Bullis, Ed., NBSIR 78-1444-3 (October 1978).

41a Semiconductor Technology Program, Progress Briefs, July 1, 1978 to

September 30, 1978, W. M. Bullis, Ed., NBSIR 79-1591 (January 1979).

42a Semiconductor Technology Program, Progress Briefs, October 1, 1978 to

December 31, 1978, W. M. Bullis, Ed., NBSIR 79-1591-2 (March 1979).

43a Semiconductor Technology Program, Progress Briefs, January 1, 1979 to

March 31, 1979, W. M. Bullis, Ed., NBSIR 79-1591-3 (June 1979).

44a Semiconductor Technology Program, Progress Briefs, April 1, 1979 to

June 30, 1979, W. M. Bullis, Ed., NBSIR 79-1591-4 (August 1979).

45a Semiconductor Technology Program, Progress Briefs, July 1, 1979 to

September 30, 1979, W. M. Bullis, Ed., NBSIR 79-1591-5 (December

1979).

46a Semiconductor Technology Program, Progress Briefs, October 1, 1979 to

December 31, 1979, W. M. Bullis, Ed., NBSIR 80-2006 (April 1980).

b. Resistivity and Hall Effect

15b Ehrstein, J. R. , Improved Surface Preparation for Spreading

Resistance Measurements on p-Type Silicon, Senrtaonduotov Measurement

Teohnotogy: Spreading Resistance Symposium, NBS Spec. Publ. 400-10

(December 1974), pp. 249-255.

Nl6b Kraft, R. , Finite Difference Techniques for Diffusion and Redistribution Problems with Segregation-type Boundary Conditions, Prooeedings

of the AICA Internat-iorval Symposium on Computer Methods for Partial

Differential Equations, Lehigh University, Bethlehem, Pennsylvania,

June 17-19, 1975, pp. 328-334.

17b Mattis, R. L. , and Buehler, M. G. , Semiaonduator Measurement Teehnologyt A BASIC Program for Calculating Dopant Density Profiles from

Capacitance-Voltage Data, NBS Spec. Publ. 400-11 (June 1975).

18b Li, S. S., Semioonduetor Measurement Technology: The Dopant Density

and Temperature Dependence of Electron Mobility and Resistivity in

N-Type Silicon, NBS Spec. Publ. 400-33 (March 1977).

21
19b Buehler, M. G. , and Thurber, W. R. # Measurement of the Resistivity of

a Thin Square Sample with a Square Four-Probe Array/ Solid-State

Eteatvonias 403-406 (1977).

20b Ehrstein/ J. R. / Effect of Specimen Preparation on the Calibration

and Interpretation of Spreading Resistance Measurements, Semiconductor Silicon/1977, H. R. Huff and E. Sirtl, Eds., pp. 377-386 (Electrochemical Society, Princeton, N.J., 1977).

21b Li, S. S., and Thurber, W. R. , The Dopant Density and Ten^erature

Dependence of Electron Mobility and Resistivity in n-Type Silicon,

Solid-State Electronics 609-616 (1977).

22b Mattis, R. L. , and Buehler, M. G. , A New Method for Calculating

Background Dopant Density from p-n Junction Capacitance-Voltage

Measurements, </. Electrodhem* Soc» 124 , 1918-1923 (1977).

23b Blackburn, D. L. , and Larrabee, R. D. , Automated Photovoltaic

Technique for Nondestructively Measuring Resistivity Vauriations of

High Resistivity Silicon Wafers, Semiconductor Characterizaticm

Techniques, Proceedings Volume 78-3, P. A. Barnes and G. A. Rozgonyi,

Eds., pp. 168-179 (Electrochemical Society, Princeton, N.J. , 1978).

24b Larrabee, R. D. , Interpretation of Hall Measurements, Semiconductor

Characterization Techniques, Proceedings Volume 78-3, P. A. Barnes

and G. A. Rozgonyi, Eds., pp. 71-76 (Electrochemical Society,

Princeton, N.J. , 1978).

25b Thurber, W. R. , Mattis, R. L. , and Liu, Y. M. , Resistivity-Dopant

Density Relationship for Silicon, Semiconductor Characterization

Techniques, Proceedings Volume 78-3, P. A. Barnes and G. A. Rozgonyi,

Eds., pp. 81-92 (Electrochemical Society, Princeton, N.J., 1978).

C27b Li, S. S., The Dopant Density and Temperature Dependence of Hole

Mobility and Resistivity in Boron Doped Silicon, Solid-State

Electronics 2^, 1109-1117 (1978).

N29b Gilsinn, D. , and Kraft, R. , Semiconductor Measurement Technology:

DISTRIB I, An Impurity Redistribution Con^uter Program, NBS Spec.

Publ. 400-57 (February 1979).

C30b Goldsmith, N. , and Mayer, A., High-Speed Spreading Resistance Probe,

NBS-GCR-79-166 (March 1979).

31b Dickey, D. H. , and Ehrstein, J. R. , Semiconductor Measurement Technology: Spreading Resistance Analysis for Silicon Layers with Nonuniform Resistivity, NBS Spec. Publ. 400-48 (May 1979).

C33b Li, s. s.. Semiconductor Measurement Technology: The Theoretical and

Experimental Study of the Temperature and Dopant Density Dependence

of Hole Mobility, Effective Mass, and Resistivity in Boron-Doped

Silicon, NBS Spec. Publ. 400-47 (November 1979).

22
36b Thurber, W. R. , A Coit5>arison of Measurement Techniques for

Determining Phosphorus Densities in Semiconductor Silicon, J*

Eleotvon, Matev, 9, 551-560 (March 1980).

38b Larrabee, R. D. , Interpretation of Hall Measurements, Etectvoohem*

Soa. 127, 1640-1643 (July 1980).

39b Thurber, W. R. , Mattis, R. L. , Liu, Y. M., and Filliben, J. J.,

Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon,

J, Eleatvochem. Soc» 127 , 1807-1812 (1980).

40b Larrabee, R. D. , Thurber, w. R. , and Bullis, W. M. , SemieonduetOT*

Meaeuvement Technology: a fortran Program for Calculating the

Electrical Properties of Extrinsic Silicon, NBS Spec. Publ. 400-63

(October 1980).

41b Larrabee, R. D. , and Blackburn, D. L. , Theory emd Application of a Nondestructive Photovoltaic Technique for the Measurement of

Resistivity Variations in Circular Semiconductor Slices, Solid-State

Electronics 1059-1068 (1980).

42b Albers, J. H. , Continuum Formulation of Spreading Resistance

Correction Factors, Electrochem* Soc, 127 , 2259-2263 (1980).

43b Thurber, W. R. , Mattis, R. L. , Liu, Y. M. , and Filliben, J. J.

Resistivity-Dopant Density Relationship for Boron-Doped Silicon,

Electrochem. Soc. 127 , 2291-2294 (1980).

44b Albers, J. H. , Comparison of Spreading Resistance Correction Factor

Algorithms Using Model Data, Solid-State Electronics 1197-1205

(1980).

c. Defects and Impurities; Carrier Lifetime

14c Buehler, M. G. , Thermally Stimulated Measurements: The Characterization of Defects in Silicon p-n Junctions, Semiconductor Silicon/1973,

H. R. Huff and R. R. Burgess, Eds., pp. 549-560 (Electrochemical Society, Princeton, New Jersey, 1973.)

17c Buehler, M. G. , Semiconductor Measurement Technology: Defects in PN

Junctions and MOS Capacitors Observed Using Thermally Stimulated Current and Capacitance Measurements - Videotape Script, NBS Spec. Publ.

400-26 (April 1976).

18c Buehler, M. G. , emd Phillips, W. E., A Study of the Gold Acceptor in

a Silicon p^n Junction and an n-type MOS Capacitor by Thermally

Stimulated Current and Capacitance Measurements, Solid-State Electronics 777-788 (1976).

Cl 9c Goodman, A. M. , Semiconductor Measurement Technology: Safe Operation

of Capacitance Meters Using High Applied-Bias Voltage, NBS Spec.

Publ. 400-34 (December 1976).

23
C20c Gfoodman, A. M. , Safe Operation of Capacitance Meters Using High

Applied-Bias Voltage, BCA Rev* 37_, 491-514 (1976).

C21c Goodman, A. M. , Semieonduetov Measurement Teahnotogy: Suppression of

Premature Dielectric Breakdown for High-Voltage Capacitance Measurements, NBS Spec. Publ. 400-37 (July 1977).

C22c Goodman, A. M. , Semiaonduator Measurement Technology: a 25-kV BiasIsolation Unit for 1-MHz Capacitance and Conductance Measurements,

NBS Spec. Publ. 400-40 (September 1977).

C23c Goodman, A. M. , Suppression of Premature Dielectric Breakdown for

High-Voltage Capacitance Measurements, RCA Rev* 436-442 (1977).

C24c Goodman, A. M. , A 25-kV Bias-Isolation Unit for 1-MHz Capacitance and

Conductance Measurements, RCA ReV* 38, 512-532 (1977).

C25c Kuczer, P. , Hook, H. o. , and Goodman, A. M. , Semieonduotor Measurement Technology: a versatile High-Voltage Bias Supply for Extended

Range MIS C(V) and G(V) Measurements, NBS Spec. Publ. 400-41

( December 1977).

C26c Kuczer, P. , Hook, H. O. , and Goodman, A. M. , A Versatile High-Voltage

Bias Supply for Extended Range MIS C(V) and G(V) Measurements, RCA

Rev* 309-339 (1978).

27c Koyama, R. Y. , Wafer Mapping of Electrically Active Defects,

Semiconductor Characterization Techniques, Proceedings Volume 78-3,

P. A. Barnes and G. A. Rozgonyi, Eds., pp. 220-228 (Electrochemical

Society, Princeton, N.J., 1978).

28c Koyama, R. Y. , Techniques for Characterizing Defects in Starting

Silicon Wafers Using TSM, Semiconductor Characterization Techniques,

Proceedings Volume 78-3, P. A. Barnes and G. A. Rozgonyi, Eds., pp.

53-60 (Electrochemical Society, Princeton, N.J. , 1978).

30c Myers, D. R. , and Phillips, W. E., Existence of an Isotope Shift for

the Sulfur Deep Level in Silicon, Appl* Phys* Letters 3^, 756-758

(1978).

31c Koycuna, R. Y. , Phillips, W. E., Myers, D. R. , Liu, Y. M. , and

Dietrich, H. B., The Energy Levels and the Defect Signature of

Sulfur-In^lanted Silicon by Thermally Stimulated Measurements,

Solid-State Electronics 953-955 (1978).

R32c Larrabee, R. D. , "X" Levels in Indium-Doped Silicon, Proc* IRIS

Specialty Group Meeting, Annapolis, Maryland, June 13-15, 1978, pp.

253-261.

C33c Goodman, A. M. , Extended Range MIS C(V) Measurement, A Technique for

Monitoring Semiconductor Device Processing, NBS-GCR-78-155 (January

1979).

24
C35c Johnson, N. M. , Bartelink, D. J., Gold, R. B. , and Gibbons, J. F.

,

Constant-Capacitance DLTS Measurement of Defect-Density Profiles in

Semiconductors, J* Appt, Phye* 4828-4833 (1979).

36c Koyama, R. Y., and Buehler, M. G. , Novel Variable-Temperature

Controllable Chuck for Use in the Detection of Deep Levels in

Processed Semiconductor Wafers, ReV, So'i» Instvum* 983-987

( 1979)

.

R37c Larrabee, R. D. , and Thurber, W. R. , Temperature Dependence of the

Responsivity of Indium-Doped Silicon Infrared Detectors, NBSIR

79-1786R (August 1979).

38c Myers, D. R. , and Phillips, W. E., Observation of Unequal Densities

for Sulfur Defects in Silicon Predeposited by Low Fluence Ion

Implantation, Eleatvon, Mater, 8, 781-788 (1979).

39c Phillips, W. E. , Koyama, R. Y., and Buehler, M. G. , Suppression of

Measurement Interferences from Interface States and Mobile Ions in

Thermally Stimulated Current Measurements in an MOS Capacitor, J,

Eteatroahem, Soo, 126 , 1979-1981 (1979).

40c Myers, D. R. , Koyama, R. Y., and Phillips, W. E. , An Implantation

Predeposition Technique for the Introduction of Deep-Level Chemical

Impurities, Proa. Ion Beam Modifioatton of Mater. Conf., Budapest,

Hungary, September 4-8, 1978, pp. 439-448.

41c Myers, D. R. , Koyama, R. Y., and Phillips, W. E., An In5>lantation

Predeposition Technique for the Introduction of Deep-Level Chemical

Impurities, Radiat. Eff. 145-150 (1980).

d. Physical Analysis Techniques

Cld Duffy, M. T. , Zanzucchi, P. J. , and Cullen, G. W. , Method to

Determine Quality of Sapphire, NBS-GCR-76-61 (September 1975).

C2d Johannessen, J. S., Spicer, W. E. , and Strausser, Y. E., Phase

Separation in Silicon Oxides as Seen by Auger Electron Spectroscopy,

Appl, Phye, Letters 2J_, 452-454 (1975).

3d Lieberman, A. G. , Problems in Using Surface Analysis Techniques for

the Depth Profiling of Microelectronic Materials, Tech. Digest, 1975

International Electron Devices Meeting, Washington, D. C. , December

1-3, 1975, pp. 126-129.

C4d Johannessen, J. S., Chemical Shifts of Auger Lines Seen in SiO^^ and

Si02 “Si Interfaces, Faraday Discuss. (Them, Soc, 60^, 306-309

(1975).

C5d Johannessen, J. S. , Electron Beam Effects in AES of Silicon Oxides,

Faraday Discuss. (Them. Soc, 313-316 (1975).

25
C6d Johannessen, J. S., Spicer, W. E. , and Strausser, Y. E., A Study of

the Chemical Composition of MOS and MNOS Structures by Auger Electron

Spectroscopy, Thin Solid Films 311-314 (1976).

7d Lieberman, A. G. , Introductory Concepts for Silicon Surface Analysis,

Semieonduator Measurement Technology : arpa/nbs workshop IV, Surface

Analysis for Silicon Devices, NBS Spec. Publ. 400-23 (March 1976),

pp. 3-6.

C8d Johannessen, J. S., Spicer, W. E., and Strausser, Y. E., Use of Auger

Electron Spectroscopy to Determine the Structure of Silicon Oxide

Films, Semieonduetor Measurement Technology: arpa/nbs workshop iv.

Surface Analysis for Silicon Devices, NBS Spec. Publ. 400-23 (March

1976), pp. 119-123.

C9d Strausser, Y. E. , and Johannessen, J. S., An Auger Electron Spectroscopy Study of Silicon Spectra from Silicon Monoxide, Silicon Dioxide,

and Silicon Nitride, Semiconductor Measurement Technology: arpa/nbs

Workshop IV, Surface Analysis for Silicon Devices, NBS Spec. Publ.

400-23 (March 1976), pp. 125-138.

ClOd Johannessen, J. S., Spicer, W. E., and Strausser, Y. E., Auger Depth

Profiling of Interfaces in MOS and MNOS Structures, Vac, Sci,

Technol, U, 849-855 (1976).

did Johannessen, J. S., Spicer, W. E., and Strausser, Y. E., An Auger

Analysis of the Si02”Si Interface, J, Appl, Phys, 3028-3037

(1976).

C13d Taylor, N. J. , Johannessen, J. S., emd Spicer, W. E., Crater-Edge

Profiling in Interface Analysis Employing Ion-Beam Etching and AES,

Appl, Phys, Letters 497-499 (1976).

Cl4d Dobrott, R. D. , Keenan, J. A., and Larrabee, G. B., Ion Microprobe

Analysis of Integrated Circuit Structures, 15th Annual Proceedings,

Reliability Physics 1977, Las Vegas, Nevada, April 12-14, 1977, pp.

54-60.

Cl5d Johannessen, J. S., Helms, C. R. , Spicer, W. E., and Strausser, Y.

E., Auger Depth Profiling of MNOS Structures by Ion Sputtering, IEEE

Trans, Electron Devices ed-24 , 547-551 (1977).

C16d Helms, C. R. , Garner, C. M. , Miller, J., Lindau, I., Schwarz, S., and

Spicer, W. E., Studies of Si/Si02 Interfaces by Auger Sputter Profiling and Photoelectron Spectroscopy Using Synchrotron Radiation,

Proc, 7th Intern, Vac, Congr, & 3rd Intern, Conf, Solid Surfaces,

Vienna, September 1977, pp. 2241-2243.

Cl7d Spicer, W. E. , Lindau, I., and Helms, C. R. , Frontiers in Surface and

Interface Analysis, R/D: Research/Development 2Q (12), 20-31 (December 1977).

26
C18d Grunthaner, F. J. , and Maserjian, J», Experimental Observations of

the Chemistry of the Si02/Si Interface# IEEE Tvans* Nual* Sai*

NS-24 (6) 2108-2112 (December 1977).

N18^d Erickson# N. E.# ESCA Studies of Clean Si (111) Surfaces# Physioa

Savipta J16# 462-465 (1977).

Cl9d Zanzucchi# P. J.# Duffy# M. T.# and Alig# R. C. # Optical Reflectance

Method for Determining Surface Quality of Sapphire# J* Eteotvoohem*

Soo. _1^# 299-305 (1978).

20d Thurber# W. R. # and Carpenter# B. S.# Boron Determination in Silicon

by the Nuclear Track Technique# *7. Electvoahem, Soa» 125 # 654-657

(1978).

C21d Helms, C. R. # Spicer# W. E. # and Johnson# N. M. # New Studies of the

Si-Si02 Interface Using Auger Sputter Profiling# Solid State Communieatlons ^# 673-676 (1978).

C22d Schwarz# S. A.# Helms, C. R., and Spicer, W. E., High Resolution Auger Sputter Profiling Study of the Effect of Phosphorus Pileup on the

Si-Si02 Interface Morphology# <7. Vac* Sci* Technol* _15# 227-230

(1978).

C23d Helms# C. R. # Strausser# Y. E.# and Spicer# W. E.# Observation of an Intermediate Chemical State of Silicon in the Si-Si02 Interface by

Auger Sputter Profiling# Appt* Phys* Letters ^# 767-769 (1978).

C24d Strausser, Y. E. # and Majumder, K. S., Chemical Structure of the

Al/Si02 Interface, J* Vac* Scl* Technol* J^# 238-239 (1978).

C25d christou. A., Semiconductor Measurement Technology: Automated

Low-Energy Electron Probe (ASLEEP) for Semiconductor Wafer

Diagnostics, NBS Spec. Publ. 400-30 (April 1978).

C26d Grunthaner, F. J. , and Maserjian, J., Chemical Structure of the

Transitional Region of the Si02/Si Interface# The Physics of SIO2

and Its Interfaces^ S. T. Pantelides# Ed.# pp. 389-395 (Pergamon

Press# New York# 1978).

C27d Helms# C. R. # Johnson# N. M. # Schwarz# S. A.# cuid Spicer# W. E.#

Auger Sputtering Profiling Studies of the Si-Si02 Interface# The

Physics of SIO2 and Its Interfaces, s. T. Pantelides# Ed.# pp.

366-372 (Pergamon Press# New York# 1978).

C28d Cristou# A.# Nelson# G. # Jenkins, W. , Davey# J. E., and Wilkens, N.,

Characterization of Semiconductor Wafer Defects by ASLEEP, SEM# and

Scanning AES# Scanning Electron Microscopy/1 9 78, vol. 1# o' Hare#

Illinois# April 17-21, 1978# pp. 273-282.

C29d Helms# C. R. # Johnson# N. M. , Schwarz# S. A.# amd Spicer# W. E.

#

Auger Sputter Profiling Studies of the Si-Si02 Interface#

Semiconductor Characterization Techniques, Proceedings Volume 78-3#

27
P. A. Barnes and G. A. Rozgonyi, Eds., pp. 136-138 (Electrochemical

Society, Princeton, N.J., 1978).

C30d Zanzucchi, P. J., and Duffy, M. J. , Surface Damage and the Optical

Reflectance of Single-Crystal Silicon, AppZ, Optiee 3477-3481

( 1978).

C31d Larrabee, G. , and Dobrott, R. , Techniques for the Preparation and

Analysis of Standard Silicon Semiconductor Specimens for the Ion

Microprobe Mass Analyzer, NBS-GCR-79-158 (January 1979).

C32d Helms, C. R. , Morphology and Electronic Structure of Si-Si02

Interfaces and Si Surfaces, VaOm Soi,* TeaihnoZ* _1^, 608-614

(1979).

C33d Schwarz, S. A., and Helms, C. R. , Model of Ion Knock-On Mixing with

Application to Si-Si02 Interface Studies, <7. Vaa* Soi* Teehnol* 16 , 781-783 (1979).

C35d Schwarz, S. A., and Helms, C. R. , A Statistical Model of Sputtering,

J. Appl, Phys, 5492-5499 (1979).

C36d Grunthaner, F. J., Grunthaner, P. J. , Vasquez, R. P. , Lewis, B. F.

,

Maser jian, J., and Madhukar, A., Local Atomic and Electronic Structure of Oxide/GaAs and Si02/Si Interfaces Using High-Resolution

XPS, J, Vac, Sai, Teehnol, J6, 1443-1453 (1979).

C37d Grunthaner, F. J., Grunthaner, P. J. , Vasquez, R. P. , Lewis, B. F.

,

Maserjian, J., and Madhukar, A., High-Resolution X-Ray Photoelectron

Spectroscopy as a Probe of Local Atomic Structure: Application to

Amorphous Si02 and the Si-Si02 Interface, Phys* Rev, Letters 43 , 1683-1686 (1979).

C38d Duffy, M. T. , Zanzucchi, P. J. , Ham, W. E., Corboy, J. F. , and

Cullen, G. w. , Semiaonduator Measurement Technology: Method to

Determine the Quality of Sapphire, NBS Spec. Publ. 400-62 (August

1980).

C41d Wilson, R. G. , and Weglein, R. D. , Acoustic Material Signatures Using

the Reflection Acoustic Microscope, Ultrasonic Mater, Characterization, H. Berger and M. Linzer, Co-Editors, NBS Spec. Publ. 596

(November 1980), pp. 345-355.

C42d Vasquez, R. P. , and Grunthaner, F. J. , Intensity Analysis of XPS

Spectra to Determine Oxide Uniformity: Application to Si02/Si

Interfaces, Surface Science 681-688 (1980).

e. Wafer Processing

C2e Wilson, R. G. , Planar and Axial Channeling of 800 keV As in <110>

Silicon, Appl, Phys, Letters 2^, 770-772 (1976).

28
3e Novotny, D. B. , Photoresist Exposure - Measurement and Control, Pvoo*

Soa. Photo-Optiaal Inatvum* Engve, 80, Developments in Semiaonduotor

Miovolithogvaphy, 9-13 (1976).

C4e Tressler, R. E., Stach, J. , euid Metz, D. , Gas Phase Con^osltlon Considerations in the Thermal Oxidation of Silicon in Cl-H-0 Ambients,

J, Eleotnoohem, Soa. 124 , 607-609 (1977).

C6e Wilson, R. G. , Dunlap, H. L., and Jamba, D. M. , Angular Sensitivity

of Controlled Implanted Doping Profiles, Serrrieonduetov Silieon/19??

,

H. R. Huff and E. Sirtl, Eds., pp. 1023-1034 (Electrochemical Society, Princeton, N.J., 1977).

C7e Jamba, D. M. , Semiaonduatov Measurement Technology: Some Aspects of

Dose Measurement for Accurate Ion In^lantation, NBS Spec. Publ.

400-39 (July 1977).

8e Novotny, D. B. , Sensitometry of Photoresists for Microelectronics,

Photogvaphie Saienee and Engineer»ing 2^, 351-355 (1977).

Cl2e Jamba, D. M. , Secondary Particle Collection in Ion In^lantation Dose

Measurement, ReV» Sci» Instvum, 634-638 (1978).

C13e Strausser, Y. E. , Scheibner, E. J. , and Johannessen, J. S., Observations of AI2O3 and Free Silicon in the Interface Between Aluminum

Films and Si02/ Thin Solid Films 203-214 (1978).

Cl4e Johannessen, J. S., Spicer, W. E., Gibbons, J. F., Plummer, J. D.

,

and Taylor, N. J., Observation of Phosphorus Pile-Up at the Si02~Si

Interface, J, Appl, Phys, 4453-4458 (1978).

15e Wilson, R. G. , Dunlap, H. L. , Jamba, D. M. , and Myers, D. R. , Semiaonduotov Measurement Technology: Angular Sensitivity of Controlled

Implanted Doping Profiles, NBS Spec. Publ. 400-49 (November 1978).

Cl6e Stach, J., Das, M. B. , and Tressler, R. E., Development of Measurement Techniques for Monitoring Chemical Purity of Materials Used in

Digital IC Processing, NBS-GCR-78-134 (September 1978).

17e Lee<^, T. F., and Liu, Y. M. , Semiconductor Measurement Technology:

Microelectronic Processing Laboratory at NBS, NBS Spec. Publ. 400-53

(December 1978).

20e Myers, D. R. , and Wilson, R. G. , Alignment Effects on Implantation

Profiles in Silicon, Proc* Ion Beam Modification of Mater. Conf.,

Budapest, Hungary, September 4-8, 1978, pp. 103-111.

C21e Wilson, R. G. , and Comas, J. , Correlation of Atomic Distribution and

Implantation Induced Damage Profiles in Be-Ion Implanted Silicon,

Proc. Ion Beam Modification of Mater. Conf., Budapest, Hungary,

September 4-8, 1978, pp. 547-556.

29
C22e Helms, C. R. , Johnson, N. M. , Schwarz, S. A., and Spicer, W. E.,

Studies of the Effect of Oxidation Time and Temperature on the

Si-Si02 Interface using Auger Sputter Profiling, Appt* Phys» 50 , 7007-7014 (1979).

23e Myers, D. R. , Wilson, R. G. , and Comas, J., Considerations of Ion

Channeling for Semiconductor Microstructure Fabrication, e7. Vae* So'i*

Teohnol. J6, 1893-1896 (1979).

24e Albers, J. H. , and Novotny, D. B., Intensity Dependence of

Photochemical Reaction Rates for Photoresists, EZeatvoohem* Soe»

127 , 1400-1403 (1980).

25e Myers, D. R. , and Wilson, R. G. , Alignment Effects on Implantation

Profiles in Silicon, RadZat* Eff, 91-94 (1980).

C27e Comas, J., and Wilson, R. G. , Channeling and Random Equivalent Depth

Distributions of 150 keV Li, Be, and B Implanted in Silicon, AppZ»

Phys, 5J[, 3697-3701 ( 1980).

C28e Wilson, R. G. , Atom and Carrier Depth Distribution for 300 keV

Arsenic Channelled in the <110> of Silicon as a Function of Alignment

Angle and Ion Fluence, Rad/iat* Eff, Lett, 109-113 (1980).

29e Novotny, D. B. , Experimental Photoresist Sensitometry and Exposure

Modeling, Pvoa, Soa, Photo-Optioal Instvum, Engvs, 221 , Semieonduetov

Miavolithogvaphy 7, 184-193 (1980).

C30e Wilson, R. G. , and Comas, J., Correlation of Atomic Distribution and

In5>lantation Induced Damage Profiles in Be-Ion Implanted Si, Radiat,

Eff, 47, 137-142 (1980).

f. Micrometrology

If Ciarlo, D. R. , Schultz, P. A., and Novotny, D. B. , Automated Inspection of IC Photomasks, Pvoo, Soa, Photo-Optiaal Instrum, Engrs, 55 , Photofahrlaation Imagery, 84-89 (1975).

N2f Jerke, J. M. , Semiaonduator Measurement Teohnology: Optical and

Dimensional-Measurement Problems with Photomasking in Microelectronics, NBS Spec. Publ. 400-20 (October 1975).

N3f Swyt, D. A., NBS Program in Photomask Linewidth Measurements, SotZd

State Teohnology J19 (4), 55-61 (April 1976).

30
C4f Kasdan, H. L. , and George, N., Linewidth Measurement by Diffraction

Pattern Analysis, Pvoa, Soo. Photo-Optical Inetrim, Engvs. 80 , Developments in Semiconductor Microlithogmphy, 54-63 (1976).

N5f Swing, R. E. , The Theoretical Basis of a New Optical Method for the

Accurate Measurement of Small Line-Widths, Proc» Soc, Photo-Optical

Instrum, Engrs, 80, Developments in Semiconductor Microlithography,

65-77 (1976).

N6f Jerke, J. M. , Hartman, A. W. , Nyyssonen, D. , Rosberry, F. W. , Swing,

R. E. , Swyt, D. A. , and Young, R. D. , Accurate Line-Width Measurements at the National Bureau of Standards, Proc, Microelectronics

Seminar - Interface '76, Monterey, California,

7f Jerke, J. M. , Hartman, A. W. , Nyyssonen, D. , Swing, R. E. , Young, R.

D., and Keery, W. E. , Conparison of Linewidth Measurements on an SEM/Interferometer System and an Optical Linewidth-Measuring Microscope, Proc, Soc, Photo-Optical Instrum, Engrs, 100 , Developments in

Semiconductor Microlithography II, 37-45 (1977).

N9f Young, R. D. , Length Calibrations in the Micrometer and SubMicrometer Range, Ann, CIRP 2^, 245-250 (1977).

NlOf Nyyssonen, D. , Linewidth Measurement with an Optical Microscope; The

Effect of Operating Conditions on the Image Profile, Appl, Optics 16 , 2223-2230 (1977).

Nllf Swyt, D. A., and Rosberry, F. W. , A Con^arison of Some Optical Microscope Measurements of Photomask Linewidths, Solid State Technology ^

(8), 70-75 (August 1977).

Nl2f Swyt, D. A., Rosberry, F. W. , and Nyyssonen, D., Calibration of Optical Microscopes for Photomask Linewidth Measurements, Proc, Microelectronics Seminar - Interface '77, Monterey, California, October

5-7, 1977, pp. 131-144.

Nl3f Swyt, D. A., An NBS Physical Standard for the Calibration of Photomask Linewidth Measuring Systems, Proc, Soc, Photo-Optical Instrum,

Engrs, 129 , Effective Utilization of Optics in Quality Assurance,

98-105 (1977).

Nl4f Swyt, D. A., Design of a Pattern on a Photomask-Like Physical Standard for Evaluation and Calibration of Linewidth-Measuring Systems,

Solid State Technology 2^ {^) , 35-42 (January 1978).

15f Novotny, D. B., and Ciarlo, D. R. , Semiconductor Measurement Technology: Automated Photomask Inspection, NBS Spec. Publ. 400-46 (April

1978).

16f Nyyssonen, D. , Optical Linewidth Measurements on Wafers, Proc, Soc,

Photo-Optical Instrum, Engrs, 135, Developments in Semiconductor

Microlithography III, 115-119 (1978).

31
17f Novotny, D. B. , and Ciarlo, D. R. , Automated Photomask Inspection,

Solid State Technology 21^ (5), 51-59, 76 (May 1978) and ^ (6), 59-67

(June 1978).

19f Swyt, D. A., Rosberry, F. W. , and Nyyssonen, D. , Photomask Linewidth

Measurement, Cirouits Manufaetuving 18 (9), 20 ff (September 1978).

2 If Nyyssonen, D. , and Jerke, J. M. , Linewidth Measurement: From Fine

Art to Science, Teah» Digest, 1978 Intevnat* Electron Devices Meeting, Washington, D. C. , December 4-6, 1978, pp. 437-440.

22f Nyyssonen, D. , and Jerke, J. M. , Optical Linewidth Measurement - A

Basic Understanding, Proc, Microelectronic Measurement Technology

Seminar, San Jose, California, February 6-7, 1979, 251-266.

23f Nyyssonen, D. , Spatial Coherence: The Key to Accurate Optical Micrometrology, Proc. Soc. Photo-Optical Instrum. Engrs. 194 , Applications

of Optical Coherence, 34-44 (1979).

24f Jerke, J. M. , Ed. , Semiconductor Measurement Technology: Accurate

Linewidth Measurements on Integrated-Circuit Photomasks, NBS Spec.

Publ. 400-43 (February 1980).

25f Nyyssonen, D. , Linewidth Measurement Spotlight, Semiconductor

International 3^ (3), 39-56 (March 1980).

C26f Kasdan, H. L. , Linewidth Measurement by Diffraction Pattern Analysis,

NBS GCR-79-175 (April 1980).

27f Nyyssonen, D. , Calibration of Optical Systems for Linewidth

Measurements on Wafers, Proc. Soc. Photo-Optical Instrum. Engrs. 221 , Semiconductor Microlithography V, 119-126 (1980).

g. Test Structures

1g Buehler, M. G. , Semiconductor Measurement Technology: Microelectronic Test Patterns: An Overview, NBS Spec. Publ. 400-6 (August

1974).

C2g Steigerwalt, S. T., and Lagnado, I., The CCD as a Test Structure for

Semiconductor Process Control, Microelectronics J. T_, 23-29 (1975).

3g Buehler, M. G. , David, J. M. , Mattis, R. L. , Phillips, W. E. , and

Thurber, w. R. , Semiconductor Measurement Technology: Planar Test

Structures for Characterizing Impurities in Silicon, NBS Spec. Publ.

400-21 (December 1975).

4g Buehler, M. G. , Semiconductor Measurement Technology: Microelectronic Test Pattern NBS-3 for Evaluating the Resistivity-Dopant

Density Relationship of Silicon, NBS Spec. Publ. 400-22 (May 1976).

32
5g Buehler, M. G. and Thurber, W. R. , A Planar Four-Probe Test Structure

for Measuring Bulk Resistivity, IEEE Tvans, Eleatvon Devices ED-23 , 968-974 (1976).

6g Galloway, K. F. , and Buehler, M. G. , The Application of Test Structures and Test Patterns to the Development of Radiation Hardened Integrated Circuits: A Review, NBSIR 76-1093 (August 1976).

7g Buehler, M. G. , and Sawyer, D. E., Microelectronic Test Patterns for

Use in Procuring Reliable, Custom Integrated Circuit Chips, 1976

Government Mieroaivouit Applications Conference Digest of Papers,

Orlando, Florida, November 9-11, 1976, pp. 62-65.

8g Buehler, M. G. , and Sawyer, D. E. , Microelectronic Test Patterns Aid

Production of Custom ICs, Circuits Manufacturing _V7 (2), 46-56

(February 1977).

9g David, J. M. , and Buehler, M. G. , A Numerical Analysis of Various

Cross Sheet Resistor Test Structures, Solid-State Electronics 20 , 539-543 (1977).

lOg Buehler, M. G. , Microelectronic Test Patterns for Use in Procuring

Custom and Highly Reproducible Integrated Circuits, Proc* Symposium

on Utilization of LSICs in Military Systems, Arlington, Virginia,

August 9-11, 1977, pp. Ill 102-III 117.

11g Russell, T. J., Leedy, T. F. , and Mattis, R. L. , A Comparison of

Electrical and Visual Alignment Test Structures for Evaluating Photomask Alignment in Integrated Circuit Manufacturing, Tech* Digest,

International Electron Devices Meeting, Washington, D.C., December

5-7, 1977, pp. 7A-7F.

Cl2g Ham, W. E., Intrachip and Spatial Parametric Integrity - An Important

Part of IC Process Characterization, Tech* Digest, International

Electron Devices Meeting, Washington, D.C., December 5-7, 1977, pp.

406-409.

13g Buehler, M. G. , Dopant Profiles Determined from Enhancement Mode

MOSFET DC Measurements, Appl* Phys* Letters 848-850 (1977).

14g Buehler, M. G. , and Thurber, W. R. , An Experimental Study of Various

Cross Sheet Resistor Test Structures, J * Electrochem* Soc* 125 , 645-650 (1978).

15g Buehler, M. G. , Grant, S. D. , and Thurber, W. R. , Bridge and van der

Pauw Sheet Resistors for Characterizing the Line Width of Conducting

Layers, J* Electrochem* Soc* 125 , 650-654 (1978).

16g Thurber, W. R. , and Buehler, M. G. , Semiconductor Measurement Technology: Microelectronic Test Pattern NBS-4, NBS Spec. Publ. 400-32

(April 1978).

33
17g Buehler, M. G. , Microelectronic Test Patterns for Use in Procuring

LSICS/ Ptoo, Industry/Joint Services Automatic Test Conf. and Workshop, San Diego, California, April 5-7, 1978, pp. 233-235.

18g Buehler, M. G. , Limitations and Applications of the DC MOSFET Profile

Method, Semiconductor Characterization Techniques, Proceedings Volume

78-3, P. A. Barnes and G. A. Rozgonyi, Eds., pp. 241-252 (Electrochemical Society, Princeton, N.J., 1978).

19g Mattis, R. L. , and Doggett, M. R. , A Microelectronic Test Pattern for

Analyzing Automated Wafer Probing and Probe Card Patterns, Solid

State Technology 2J[ (11), 76-79 (November 1978).

20g Russell, T. J., Maxwell, D. A., Reimann, C. T., and Buehler, M. G. , A

Microelectronic Test Pattern for Measuring the Uniformity of an Integrated Circuit Fabrication Technology, Proc» Govt» Microcircuit

Applications Conf», Monterey, California, November 14-16, 1978, pp.

33-36.

21g McCarthy, D. , Acevedo, J., Stands, B. , Lonky, M. , and Buehler, M. G.,

An Advanced Integrated Test Structure for High Speed Measurement of

Generation Lifetime, Proc. Govt* Microcircuit Applications Conf»,

Monterey, California, November 14-16, 1978, pp. 37-38.

23g Russell, T. J., Maxwell, D. A., Reimann, C. T., and Buehler, M. G., A

Microelectronic Test Pattern for Measuring Uniformity of an Integrated Circuit Fabrication Technology, Solid State Technology ^ (2),

71-74 (February 1979).

24g Buehler, M. G. , Comprehensive Test Patterns with Modular Test Structures: The 2 N Probe-Pad Array, Proc* Microelectronics Measurement Technology Seminar, San Jose, California, Februcury 6-7, 1979,

pp. 27-38.

25g Russell, T. J. , and Maxwell, D. A., Semiconductor Measurement Technology: A Production-Con^atible Microelectronic Test Pattern for

Evaluating Photomask Misalignment, NBS Spec. Publ. 400-51 (April

1979).

27g Buehler, M. G. , Coir^) rehensive Test Patterns with Modular Test Structures: The 2 N Probe-Pad Array Approach, Solid State Technology

^ (10), 89-94 (October 1979).

28g Linholm, L. W. , Carver, G. P. , and Russell, T. J., The Use of Microelectronic Test Structures to Characterize IC Materials, Processes,

and Processing Equipment, Proc* Measurement Sci* Conf•, San Luis

Obispo, California, November 30 - December 1, 1979, pp. 129-150.

C29g Ham, w. E. , Semiconductor Measurement Technology: Con^)rehensive Test

Pattern and Approach for Characterizing SOS Technology, NBS Spec.

Publ. 400-56 (January 1980).

34
30g Buehler, M. G. , The D-C MOSFET Dopant Profile Method, Eleatvoohem,

SOO, 701-704 ( 1980).

32g Carver, G. P. , Linholm, L. W. , and Russell, T. J., The Use of

Microelectronic Test Structures to Characterize IC Materials,

Processes, and Processing Equipment, Solid State Teohnotogy 23 (9),

85-92 (September 1980).

33g Buehler, M. G. , The Use of Electrical Test Structure Arrays for

Integrated Circuit Process Evaluation, Eleotvochem* Soo» 127 , 2284-2290 (1980).

35g Buehler, M. G. , Effect of the Drain-Source Voltage on Dopant Profiles

Obtained from the d-c MOSFET Profile Methid, IEEE Tvans* Eleatvon

Deviaes ed-27 , 2273-2277 (1980).

h. Bonding and Packaging

11h Harman, G. G. , Metallurgical Failure Modes of Wire Bonds, presented

as part of a Workshop on Metallurgical Failure Modes, 12th Annual

Pvoaeedings, Reliahility Physics 1974, Las Vegas, Nevada, April 2-4,

1974, pp. 131-141.

12h Harman, G. G. , A Metallurgical Basis for the Non-Destructive Bond

Pull-Test, 12th Annual Proceedings, Reliahility Physics 1974, Las

Vegas, Nevada, April 2-4, 1974, pp. 205-210.

14h Harman, G. G. , The Use of Acoustic Emission in a Test for Beam Lead

Bond Integrity, 14th Annual Proceedings, Reliahility Physics 1976,

Las Vegas, Nevada, April 20-22, 1976, pp. 86-97.

15h Harman, G. G. , The Use of Acoustic Emission in a Test for Beam-Lead,

TAB, and Hybrid Chip Capacitor Bond Integrity, IEEE Trans* Parts,

Hybrids, and Packaging php- 1

3

, 116-127 (1977).

16h Harman, G. G. , and Albers, J., The Ultrasonic Welding Mechanism as Applied to Aluminum- and Gold-Wire Bonding on Microelectronics, IEEE

Trans, Parts, Hybrids, and Packaging php- 1

3

, 406-412 (1977).

17h Harman, G. G. , and Cannon, C. A., The Microelectronic Wire Bond Pull

Test - How to Use It, How to Abuse It, Proc. 1978 IEEE Electronic

Components Conference, Anaheim, California, April 25, 1978, pp.

291-299.

18h Harman, G. G. , and Cannon, C. A., The Microelectronic Wire Bond Pull

Test - How to Use It, How to Abuse It, IEEE Trans, Components,

Hybrids, and Manufacturing Technology chmt1

, 203-210 (1978).

20h Harman, G. G. , Semiconductor Measurement Technology: Nondestructive

Tests Used to Insure the Integrity of Semiconductor Devices, with

Emphasis on Acoustic Emission Techniques, NBS Spec. Publ. 400-59

(September 1979).

35
i. Hermeticity; Moisture Measurement

3i Ruthberg, S. , Neff, G. R. , and Martin, B. D. , Radioisotope Hermetic

Test Precision, Pvoa* 1977 Intevnat, Miavoeteatvonics Symp»j Baltimore, Maryland, October 24-26, 1977, pp. 131-137.

C4i Sulouff, R. E., A Stu(^ of Leak Rate Versus Reliability of Hybrid

Packages, Pvoa. 1978 Intermat. Miovoeleatvonies Symp., Minneapolis,

Minnesota, September 25-27, 1978, pp. 121-124.

C5i Sulouff, R. E., Investigation of Moisture Measurement, Failure Rate,

and Leak Rate and Stu^ of Moisture Infusion, NBS-GCR-79-170 (August

1979)

.

j. Device Inspection and Test

4j Sawyer, D. E., and Berning, D. W. , Laser Scanning of Active Semiconductor Devices, Teoh, Digest, 1975 International Electron Deiytoes

Meeting, Washington, D.C., December 1-3, 1975, pp. 111-114.

5 j Sawyer, D. E. , and Berning, D. w. , Semiconductor Measurement Technology: Laser Scanning of Active Semiconductor Devices - Videotape

Script, NBS Spec. Publ. 400-27 (February 1976).

6j Sawyer, D. E., and Berning, D. W. , Laser Scanning of MOS IC's Reveals

Internal Logic States Nondestructively, Proc. IEEE 393-394

(1976).

7j Galloway, K. F. , Leedy, K. 0., and Keery, W. J., Electron-BeamInduced Currents in Simple Device Structures, Proc. 26th Electronic

Components Conf., San Francisco, California, April 26-28, 1976, pp.

257-262.

8j Keery, W. J., Leedy, K. 0., and Galloway, K. F. , Electron Beam Effects on Microelectronic Devices, Scanning Electron Microscopy/1 976,

Toronto, April 5-9, 1976, pp. 507-514. .

9j Galloway, K. F. , Leedy, K. 0., and Keery, W. J., Electron-BeamInduced Currents in Simple Device Structures, IEEE Trans. Parts,

Hybrids, and Packaging php- 1

2

, 231-236 (1976).

10 j Sawyer, D. E., and Berning, D. W., Thermal Mapping of Transistors

With a Laser Scanner, Proc. IEEE 1634-1635 (1976).

11 j Sawyer, D. E., and Berning, D. W. , Mapping Nonlinearities Over the

Active Regions of Semiconductor Devices, Proc. IEEE 1635-1637

( 1976).

C12j Kern, W. , and Comizzoli, R. B. , New Methods for Detecting Structural

Defects in Glass Passivation Films, J. Vac. Sci. Technol. _1^, 32-39

( 1977)

.
13 j Lee(^, K» 0., A Bibliography on Electron Beam Induced Current Analysis of Semiconductor Devices, Solid State Technology ^

(2), 45-48

(February 1977).

14 j Sawyer, D. E., and Berning, D» w. , Semiconductor* Meaeuvement Technology: A Laser Scanner for Semiconductor Devices, NBS Spec. Publ.

400-24 (February 1977).

C15j Kern, w. , and Comizzoli, R. B. , Semiconductor Measur*ement Technology:

Techniques for Measuring the Integrity of Passivation Overcoats on Integrated Circuits, NBS Spec. Publ. 400-31 (March 1977).

16 j Devaney, J. R. , Leedy, K. o. , and Keery, W. J., Semiconductor Measurement Technology: Notes on SEM Examination of Microelectronic

Devices, NBS Spec. Publ. 400-35 (April 1977).

Cl7j Weglein, R. D. , Wilson, R. G. , and Bonnell, D. M. , Scanning Acoustic

Microscopy - Application to Fault Detection, 15th Annual Proceedings,

Reliability Physics 1977, Las Vegas, Nevada, April 12-14, 1977, pp.

37-43.

C18j Quate, c. F. , A Scanning Acoustic Microscope, Semiconductor Silicon/1977, H. R. Huff and E. Sirtl, Eds., pp. 422-430 (Electrochemical

Society, Princeton, N.J., 1977).

Cl9j Wilson, R. G. , Weglein, R. D., and Bonnell, D. M. , Scanning Acoustic

Microscopy for Integrated Circuit Diagnostics, Semiconductor Silicon/1977, H. R. Huff and E. Sirtl, Eds., pp. 431-440 (Electrochemical

Society, Princeton, N.J., 1977).

21 j Sawyer, D. E., Berning, D. W. , and Lewis, D. C., Laser Scanning of

Active Integrated Circuits and Discrete Semiconductor Devices, Solid

State Technology ^

(6), 37-41, 48 (June 1977).

C22j Comizzoli, R. B. , Nondestructive, Reverse Decoration of Defects in IC

Passivation Overcoats, Electrochem* Soc» 124 , 1087-1095 (1977).

C23 j Konpfner, R. , and Quate, C. F. , Acoustic Radiation and Its Use in

Microscopy, Physics in Technology 8, 231-237 (1977).

C24j Atalar, A., Quate, C. F. , and Wickramasinghe, H. K. , Phase Imaging in

Reflection with the Acoustic Microscope, Applm Phys* Letters 31 , 791-793 (1977).

C25j Weglein, R. D. , and Wilson, R. G. , Image Resolution of the Scanning

Acoustic Microscope, Appl* Phys» Letters 793-796 (1977).

C27 j Weglein, R. D. , and Wilson, R. G. , Characteristic Material Signatures

by Acoustic Microscopy, Electron^ Lett* J_4, 352-354 (1978).

C28j Weglein, R. D. , Gray Scale for Scanning Acoustic Microscopy, Electron. Lett. 14, 656-657 (1978).

37
C29j Atalar, A., An Angular-Spectrum Approach to Contrast in Reflection

Acoustic Microscope, Appt* Phys* 5130-5139 (1978).

C30 j Weglein, R. D. , and Wilson, R. G. , An Acoustic Gray Scale for Scanning Acoustic Microscopy and Diagnostic Ultrasound, Ultvasound Imaging 2/ 89-100 (1979).

C31j Weglein, R. D. , A Model for Predicting Acoustic Material Signatures,

Appl, Phys» Letters 179-181 (1979).

C33j Quate, C. F. , Atalar, A., and Wickramasinghe, H. K. , Acoustic Microscopy with Mechanical Scanning - A Review, Proo» IEEE 1092-1114

(1979).

C34j Quate, C. F. , The Acoustic Microscope, Sai, Am, 241 (4), 62-70 (October 1979).

C36 j Quate, C. F. , Innovative Measurement Technology for the Semiconductor

Device Industry — "The Acoustic Microscope -• A New Instrument for

Viewing Integrated Circuits," NBS GCR-80-204 (May 1980).

1. Radiation Effects

171 Galloway, K. F. , Keery, W. J., and Leedy, K. O. , Integrated Circuit

Dcunage Resulting from SEM Examination, Pvoo, 25th Eleetvonia

Components Conf,, Washington, D.C., May 12-14, 1975, pp. 263-266.

C211 Goodman, A. M. , and Weitzel, C. E., The Effect of Electron-Beam Aluminization on the Si-Sapphire Interface, Appt, Phys, Letters 31 , 114-117 (1977).

241 Galloway, K. F. , and Mayo, S., Radiation Dose at the Silicon-Sapphire

Interface Due to Electron-Beam Aluminization, J, Appl, Phys, 49 , 2586-2588 (1978).

251 Galloway, K. F., and Mayo, S., On the Compatibility of X-Ray Lithography and SOS Device Fabrication, IEEE Trans, Electron Devices ED-25 , 549-550 (1978).

261 Galloway, K. F. , VLSI Processing, Radiation, and Hardening, IEEE

Trans, Nucl, Sci, NS-25 , 1469-1472 (1978).

281 Galloway, K. F. , and Mayo, S., Radiation Levels Associated with the

Electron-Beam Metallization Process, Solid State Technology 22 (5),

96-100 (May 1979).

291 Galloway, K. F. , VLSI Processing, Radiation and Hardening, Semiconductor International 2^ (4), 65-73 (May 1979).

301 Galloway, K. F., Mayo, S., and Roitman, P. , Radiation Levels Associated with Advanced Lithographic Techniques, J, Electrochem, Soc,

126, 2245-2248 (1979).

38
C321 Grunthaner, F. J., Lewis, B. F. , Vasquez, R. P. , Maser jian, J., and

Madhiikar, A., Reduced Oxidation States and Radiation-Induced Trap

Generation at Si/Si02 Interface, The Phyeice of MOS Inaulatove, G.

Lucovsky, S. T. Pantelides, and F. L. Galeener, Eds., pp. 290-295

(Pergaraon Press, New York, 1980).

C331 Grunthaner, F. J., Lewis, B. F., Zamini, N., Maser jian, J., and

Madhukar, A. , XPS Studies of Structure-Induced Radiation Effects at

the Si/Si02 Interface, IEEE Tvana, Nuel, Sai, NS-27 , 1640-1646

(1980).

n. Proceedings of Symposia and Workshops

2n Schafft, H. A. , Semiaonduotov Meaauvement Technology: arpa/nbs work

shop I. Measurement Problems in Integrated Circuit Processing and

Assembly, NBS Spec. Publ. 400-3 (February 1974).

3n Schafft, H. A., Semiaonduotov Meaauvement Technology: arpa/nbs Work

shop II. Hermeticity Testing for Integrated Circuits, NBS Spec.

Publ. 400-9 (December 1974).

5n Schafft, H. A. , Semiaonduotov Meaauvement Technology : arpa/nbs Work

shop III. Test Patterns for Integrated Circuits, NBS Spec. Publ.

400-15 (January 1976).

6n Lieberman, A. G. , Semiaonduotov Meaauvement Technology: arpa/nbs

Workshop IV. Surface Analysis for Silicon Devices, NBS Spec. Publ.

400-23 (March 1976).

o. Miscellaneous

Cl5o Rudenberg, H. G. , Automated Integrated Circuit Processing and

Assembly, NBS-GCR-76-64 (April 1975).

C16o Weglein, R. D. , Acoustic Properties of Sputtered Glass at Microwave

Frequencies, Appl, Phye. Letteva 2^, 277-279 (1976).

21o Bullis, W. M. , The NBS Semiconductor Technology Program, Pvoc,

Sympoaium on Utilization of LSICe in Militavy Syatema, Arlington,

Virginia, Auqast 9-11, 1977, pp. Ill 87-III 101.

39
7. REFERENCES

1. Proceedings, Solid State Device Reliability Workshop, Warrenton,

Virginia, July 24-28, 1972, NAVMAT Report SER 16-033.

2. Heilmeier, G. H. , Reliability — Some Early Inpressions of a Pentagon

Newcomer, 10th Annual Proceedings, Reliability Physics 1972, Las Vegas,

Nevada, April 5-7, 1972, pp. 1-4.

3. Nossiter, B. D. , Weapons Systems: A Story of Failure, Washington Post,

January 26, 1969, p. A1

.

4. Ad Hoc Committee on Materials and Processes for Electron Devices,

Materials and Processes for Electron Devices, National Materials

Advisory Board Publication NMAB-289, May 1972, p. 106.

5. Yield of Electronic Materials and Devices, National Materials Advisory

Board Publication NMAB-290, July 1972.

6. Bullis, W. M. , Measurement Methods for the Semiconductor Device Industry — A Review of NBS Activity, NBS Tech. Note 511 (December 1969).

7. Oettinger, F. F. , Measurement Techniques for High Power Semiconductor

Materials and Devices; Annual Report, January 1 to December 31, 1977,

NBSIR 78-1474 (September 1978).

8. Oettinger, F. F., Measurement Techniques for High Power Semiconductor

Materials and Devices: Annual Report, October 1, 1977 to September 30,

1978, NBSIR 79-1756 (June 1979).

9. Ehrstein, J. R. , Two-Probe (Spreading Resistance) Measurements for

Evaluation of Semiconductor Materials and Devices, Nondestructive

Evaluation of Semiconductor Materials and Devices, j. n. Zemel, Ed. , pp.

1-66 (Plenum Press, New York, 1979).

10. Koyama, R. Y. , Detection of Deep Levels in High Power Semiconductor Materials and Devices, NBS Res* 83, 273-281 (1978).

11. Koyeima, R. Y. , and Buehler, M. G. , Semiconductor Measurement Technology:

A Wafer Chuck for Use Between -196 and 350"C, NBS Spec. Publ. 400-55

(January 1979).

12. Oettinger, F. F., and Larrabee, R. D. , Measurement Techniques for High

Power Semiconductor Materials and Devices; Annual Report, October 1,

1978 to September 30, 1979, NBSIR 80-2061 (August 1980).

13. Forman, R. A., Optical Study of Isotopic Effects in the Sulfur Deep

Level in Silicon, Appl* Phys* Letters 3^, 776-778 (1 November 1980).

14. Nyyssonen, D. , Optical Linewidth Measurements on Silicon and Iron-Oxide

Photomasks, Proc* Soc, Photo-Optical Instrum. Engrs* 100 , Developments

in Semiconductor Microlithography II, 127-134 (1977).

40
15. Linholm, L. W. , CMOS/SOS Test Patterns for Process Evaluation and

Control: Annual Report, March 1 to November 1, 1978, NBSIR 79-1595

(January 1979).

16. Carver, G. P. , and Buehler, M. G. , An Analytical Expression for the

Evaluation of Leakage Current in the Integrated Gated-Diode

Electrometer, IEEE Tvans* Eleatvon Deviaes ed-27 , 2245-2252 (1980).

17. Sawyer, D. E., and Kessler, H. K. , Laser Scanning of Solar Cells for the

Display of Cell Operating Characteristics and Detection of Cell Defects,

IEEE Ivans, Eleatvon Devices ed-27 , 864-872 (1980).

18. Harman, G. G. , Ed., Semiaonduatov Measuvement Tedhnology: Microelectronic Ultrasonic Bonding, NBS Spec. Publ. 400-2 (January 1974).

19. Albers, J. H. , Ed., Semiaonduatov Measuvement Teahnology: The

Destructive Bond Pull Test, NBS Spec. Publ. 400-18 (February 1976).

20. Ruthberg, S., A Rapid Cycle Method for Gross Leak Testing with the

Helium Leak Detector, IEEE Ivans, Components, Hyhvids, and Manufaatuving leak, chmt-3 , 564-570 (1980).

21. Bullis, w. M., Semiaonduatov Measuvement leahnology: Metrology for

Submicrometer Devices and Circuits, NBS Spec. Publ. 400-61 (May 1980).

22. Bullis, W. M. , and Scace, R. I., The NBS Semiconductor Technology

Program and VLSI, NBSIR 80-2057 (June 1980).

23. Standard Practice for Preparing High-Resistivity n-Type Silicon for

Spreading Resistance Measurements (ASTM Designation F 674), 1980 Annual

Book of ASIM Standavds, Part 43. See also Standard Method for Measuring

Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer

Using a Spreading Resistance Probe (ASTM Designation F 672), ibid.

41
APPENDIX

Research Contracts Sunmary

Contract Approximate or Order

No. Organization Title Start End Cost (k$)

4-35807 A. 0. Little, Inc. Automated Integrated Circuit Processing 2/ 7/74 5/31/75 37.9 and Assembly

502498* Naval Electronics Laboratory Investigate CCD Test Patterns for Appli- 10/ 1/73 6/30/75 160.0 Center cation to Senriewmluctor Process Control 408726*)

503183*

[

602156*)

Lawrence Livermore Laboratory- Automated IC Photomask Inspection 1/ 1/74 3/ 1/77 215.0

4-358971 Hi-Rel Laboratories Electron Microscope Failure Analysis 3/ 1/74 12/31/76 25.0 513840*) Techniques

501718*) Tlie Generation and Qualification of an 8/ 2/74 9/30/77 165.0 602542*) Naval Research Laboratories Automated Scanning Low Energy Electron

711782*)

; Probe for Semiconductor Wafer and IC Diagnostics

5-35717 Pennsylvania State Univer- Development of Measurement Techniques for 7/15/74 11/ 1/77 259.0 sity Monitoring Chemical Purity of Materials

Used in Digital IC Processing 5-35880 Martin Marietta Aerospace Hermeticity and Packaging - Moisture 4/ 3/75 9/25/78 140.1* Measurements

5-35881 Solecon Laboratories Spreading Resistance Probe Calibration 4/ 3/75 5/31/78 53.1 for Silicon 5-358901 702980*/

Recognition Systems, Inc. Quantitative Analysis of MAME-1 Performance 4/ 3/75 8/15/78 30.2

5-35891 Hughes Research Laborato- Measurement Technology for Critical 4/14/75 9/30/80 234.8

ries Implantation Parajneters 5-35898 Hughes Research Laborato- Scanning Acoustic Microscope Measurement 4/14/75 3/31/79 392.7

ries Technology

S-35899 Stanford University The Acoustic Microscope - A New Instrument 9/ 1/75 3/31/79 307.0 for Viewing Integrated Circuits 5-35912 RCA Laboratories Extended Range MIS C(V) Measurement - A 4/24/75 11/30/77 151.1 Technique for Monitoring Semiconductor

Device Processing

5-35913 RCA Laboratories Development of Techniques for Measuring the 4/24/75 1/14/77 67.0

- Integrity of Passivation Overcoats on Integrated Circuits

5-35914 RCA Laboratories Study of High Speed Spreading Resistance

(Probe) Method to Determine Quality of Sapphire

4/24/75 9/30/78 139.4

5-35915 RCA Laboratories 4/25/75 8/16/79 250.3 5-35916 RCA Laboratories Test Pattern Design and Analysis for SOS/LSI 4/24/75 3/31/79 199.7 5-35917 Texas Instruments Incor- Development of Techniques for the Preparation 4/30/75 12/31/78 169.3 porated and Analysis of Standard Silicon Semicon- ductor Specimens for Ion Microprobe Hass Analyzer

5-35944 Stanford University Innovative Measurement Technology for the Semiconductor Device Industry Based on Electron Spectroscopy

6/30/75 4/ 2/79 632.8T

611377* Jet Propulsion Laboratory Techniques for Chemical Diagnostics In Semiconductor Processing

2/15/76 8/31/79 202.0

6-35766 Westinghouse Electric Corp Advanced Planar Silicon Test Structures to

be Measured with High Speed Testers

9/ 1/76 10/31/79 199.0

7-35741 University of Florida Mobility-Dopant Density Relations In n- and p-Type Silicon

3/11/77 6/10/80 81.7

708041*1 801846*)

Naval Research Laboratory Ion Implanted Silicon Characteristics 3/11/77 9/30/79 41.0

809074* Xerox Corporation DLTS Measurements and Analysis 4/ 3/78 9/15/78 9.5

* Order No. Includes $3070 Government furnished equipment

t Includes $138 300 special equipment.

42
Distribution List

Department of Defense

Defense Advanced Research Projects Agency

ATTN: Dr. Richard A. Reynolds

ATTN; Dr. Sven Roosild

Defense Nuclear Agency

ATTN; Dr. E. E. Conrad

ATTN: LCdr. W. Mohr

ATTN; Dr. R. B. Oswald

Office of Under Secretary of Defense (R&E)

ATTN: L. W. Sumney (VHSIC Pgm. Mgr.)

National Security Agency

ATTN: Paul Losleben (Code R154)

Department of the Air Force

Air Force Office of Scientific Research

ATTN; Dr. Thomas Walsh

Air Force Space Division

ATTN; Lt. Col. D. Cole

ATTN: Col. J. A. Norby

Air Force Systems Command

ATTN; Major Paul R. Owens (AFSC/DLWA)

Air Force Weapons Laboratory

ATTN; John Mullis (ELP)

Air Force Wright Aeronautical Laboratories

ATTN; Dr. J. M. Blasingame, Jr. (AFWAL/AAD)

ATTN: Robert Conklin (AFWAL/DHE)

ATTN; J. F. Skalski (AFWAL/AADE)

ATTN: Stanley E. Wagner (AFWAL/AADE)

ATTN: Robert Werner (AFWAL/AADG)

Rome Air Development Center

ATTN: Dr. R. M. Barrett

ATTN; Dr. Robert W. Thomas

Department of the Army

Harry Diamond Laboratories

ATTN: Dr. J. McGarrity

U.S. Army Electronics Technology & Devices

Laboratory

ATTN; DELET-ED (C. Cook)

ATTN; DELET-IV (Dr. Pete Hudson)

ATTN; (Dr. Jack Kohn)

ATTN; DRSEL-TL-IR (Bernard Reich)

ATTN; DELET-D (Dr. C. G. Thornton)

U.S. Army Research Office

ATTN ; Dr . Horst Whitman

Department of the Nayy

Deputy Assistant Secretary of the Navy

ATTN; Dr. D. Barbe

Naval Air Development Center

ATTN; F. Reinert (502A)

Naval Air Systems Command

ATTN: Charles D. Caposell (Code AIR-360F)

ATTN: A. David Klein (Code 360G)

Naval Avionics Center

ATTN: S. L. Foreman

Naval Electronic Systems Command

ATTN: N. Butler (Code 304)

Naval Ocean Systems Center

ATTN; M. E. Aklufi (Code 9251)

ATTN; C. E. Holland (Code 923)

ATTN; Dr. Isaac Lagnado (Code 9251)

ATTN: Dr. E. Lind (Code 9251)

ATTN: R. Reedy (Code 9251)

ATTN; Dr. S. T. Steigerwalt (Code 9251)

Naval Research Laboratory

ATTN; Dr. A. Christou (Code 6875)

ATTN; Dr. James Comas (Code 6823)

ATTN; Dr. John Davey (Code 6810)

ATTN; H. L. Hughes (Code 6816)

ATTN: Dr. Bruce McCombe (Code 6800)

ATTN; Dr. E. A. Wolicki (Code 6601)

ATTN; Dr. Leo Young (Code 6803)

Naval Weapons Center

ATTN: Dr. H. F. Blazek (Code 3318)

Naval Weapons Support Center

ATTN; Marvin Jackson (Code 3073)

ATTN: Jcunes Ramsey (Code 3073)

ATTN; John A. Sturrock (Code 3072)

Office of Naval Research

ATTN: Dr. John Dimmock

ATTN: Dr. Larry Cooper (Code 427)

Director

Strategic Systems Project Office

ATTN; (SP-23, R. D* Antonio)

ATTN: (SP-2744, K. Davis)

ATTN; (SP-27331, P. Spector)

Other Government

Federal Communications Commission

ATTN; Dr. Stephen J. Lukasik

43
other Government (continued)

NASA Headquarters

ATTN: Joseph L. M\arphy, Code Z ATTN; Charles E. Pontious, Code RES

NASA - Goddard Space Flight Center

ATTN; John W. Adolphsen, Code 311

NASA - Langley Research Center

ATTN; Charles Husson

NASA - Marshall Space Flight Center

ATTN; Dr. John Gould

ATTN: Leon C. Kamiter. Code EC44/L

National Science Foundation

ATTN; Dr. Stephen Kahne

Academic

University of California

ATTN : Prof . Diogenes Angelakos

University of Florida

ATTN; Prof. S. S. Li

Pennsylvania State University

ATTN: Prof. Joseph Stach

Stanford University

ATTN: Dr. C. R. Helms

ATTN: Dr. James D. Meindl

ATTN; Prof. C. F. Quate

ATTN: Prof. W. E. Spicer

University of Texas at Austin

ATTN; Prof. Herbert Woodson

Jet Propulsion Laboratory

ATTN; Dr. F. J. Griinthaner

ATTN; Warren H. Lockyear

Industrial

BDM Corporation

ATTN; Dr. C. Martin Stickley

COMSAT Laboratories

ATTN: Dr. Geoffrey Hyde

Delco Electronics

ATTN: Dr. Frank S. Stein

Electric Power Research Institute

ATTN: John J. Dougherty

John Fluke Manufacturing Company, Inc.

ATTN: John M. Fluke, Jr.

General Electric Company

ATTN : Larry Osterman

ATTN; Dr. Amandus H. Sharbaugh

Hewlett-Packard Laboratories

ATTN: Dr. Zvonko Fazarinc

Hi-Rel Laboratories

ATTN : J. Devaney

Honeywell Systems & Research Center

ATTN : Bob Witham

Hughes Aircraft Company

ATTN: Dr. Arthur Chester

ATTN; Dr. Wolfgang Kummer

Hughes Research Laboratories

ATTN; Dr. George Brewer

ATTN: Dr. R. B. Wilson

IBM Corporation

ATTN: Dr. Wilhelm Anacker

ATTN; H. A. Cloud

Lawrence Livermore Laboratory

ATTN; D. R. Ciarlo

Arthur D. Little, Inc.

ATTN; H. G. Rudenberg

Martin Marietta Aerospace

ATTN; R. E. Sulouff

Mission Research Corporation

ATTN; J. Raymond

National Semiconductor Corporation

ATTN; Pierre R. Lamond

Raytheon Company

ATTN; George Agule

RCA Laboratories

ATTN: Dr. C. W. Cullen

ATTN: Dr. M. T. Duffy

ATTN; Dr. N. Goldsmith

ATTN; Dr. A. M. Goodman

ATTN; Dr. W. E. Ham

ATTN; Dr. W. Kern

ATTN: A. Mayer

ATTN; Dr. P. J. Zanzucchi

Recognition Systems , Inc

.

ATTN: H. L. Kasdan

Rockwell International Corporation

ATTN: Bill White

Solecon Inc.

ATTN: D. H. Dickey

Ford Motor Company

ATTN : Gary Boone

44
Industrial (continued)

Sperry Corporate Research Center

ATTN: Dr. Gerald F. Ross

Texas Instruments

ATTN: Dr. Pallab K. Chatterjee

ATTN : Dr . R. Dobrott

ATTN; Dr. George Heilmeier

ATTN; G. Larrabee

ATTN: Dr. John Pankratz

ATTN : De^m Tombs

TRW Inc.

ATTN; Dr. Barry Whalen

United Technologies Research Center

ATTN; Dr. Anthony J. DeMaria

Varian Associates

ATTN: Dr. Wilmer Bottoms

Westinghouse Electric Corp.

ATTN; D. McCarthy

ATTN; D. S. Herman

ATTN; J. Victorey

ATTN ; J. Acevedo

ATTN : John Walker

Westinghouse Research & Development Center

ATTN: Dr. Daniel R. Muss

Xerox Corporation

ATTN; Dr. N. M. Johnson

Electronic Industries Association

ATTN : Jack Hessman

SEMI

ATTN; Phil Gregory

Semiconductor Industry Association

ATTN ; Warren Davis

G. C. Messenger

«

45
NBS-114A (REV. 2-80) U.S. DEPT. OF COMM.

BIBLIOGRAPHIC DATA

SHEET (See instructions)

1. PUBLICATION OR

REPORT NO.

NBSIR 81-2224

2. Performing Organ. Report NoJ 3. Publication Date

4. TITLE AND SUBTITLE

Advancement of Reliability, Processing, and Automation for Integrated Circuits with

the National Bureau of Standards (ARPA/IC/NBS)

5. AUTHOR(S)

W. M. Bullis

6. PERFORMING ORGANIZATION (If joint or other than NBS, see instructions)

national bureau of standards

DEPARTMENT OF COMMERCE

WASHINGTON, D.C. 20234

7. Contract/Grant No. ARPA Order 2397

S. Type of Report & Period Covered

Final

Jan. 1973 to Oct. 1979

9.

SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street, City. Stote, ZIP)

Defense Advanced Research Projects Agency

1400 Wilson Boulevard

Arlington, VA 22209

10.

SUPPLEMENTARY NOTES

I I Document describes a computer program; SF-185, FIPS Soft>ware Summary, is attached.

11.

ABSTRACT (A 200-word or less factual summary of most significant information. If document Includes a significant

bibliography or literature survey, mention it here) The program described in this report was undertaken in 1973 to develop the measurement technology necessary to enable device manufacturers to exert more effective

control over the materials and processes they use to make integrated circuits with

the ultimate aim of providing increased reliability at reasonable cost. Work was carried out in 12 technical areas: resistivity and dopant characterization; crystal

defects and contaminants; oxides and other insulator films; physical analysis

techniques; film and layer thickness; materials for infrared detector eurrays;

materials and procedures for wafer processing; photolithography; microelectronic

test patterns; wafer inspection and test; die and interconnection bonding; and

hermeticity. Many improved measurement technologies of considerable diversity were

developed emd documented during this program. The results have been widely and

beneficially applied in other DoD projects and by the U.S. semiconductor industry.

At the present time the work is being extended to accommodate the denser circuits,

larger chips, and new processing techniq[ues associated with very large scale

integration.

12.

KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolons)

Electronics; integrated circuits; metrology; microelectronics; semiconductors;

silicon.

13. AVAILABILITY

|X I Unlimited

I I For Official Distribution. Do Not Release to NTIS

( I Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C.

20402.

Order From National Technical Information Service (NTIS), Springfield, VA. 22161

14. NO. OF

PRINTED PAGES

47

15. Price

$6.50

]

USCOMM-OC 9043-P80