A 11 ID 2 718243 NBS

NBSIR 87-3644 publications

Center for Electronics and

Electrical Engineering

Technical

Progress

Bulletin

Covering Center Programs,

April to June 1987, 87-2

with 1987 CEEE Events Calendar

October 1987

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899

QC

100

. U 5 6

#87-3644

1987

c.2

"7
INTRODUCTION TO OCTOBER 1 987 ISSUE OF THE CEEE TECHNICAL PROGRESS BULLETIN

This is the nineteenth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and Electrical Engineering. This issue of the CEEE Technical Progress Bulletin covers the

second quarter of calendar year 1987.

Organization of Bulletin : This issue contains abstracts for all Center papers re- leased tor publication by NBS in the quarter and citations and abstracts for Center

papers published in the quarter. Entries are arranged by technical topic as identified in the table of contents and alphabetically by first author under each subheading within each topic. Unpublished papers appear under the subheading "Released for

Publication". Papers published in the quarter appear under the subheading "Recently

Published". Following each abstract is the name and telephone number of the individual to contact for more information on the topic (usually the first author) . This

issue also includes a calendar of Center conferences and workshops planned for calendar year 1987, some preliminary announcements for calendar year 1988, and a list of sponsors of the work.

Center for Electronics and Electrical Engineering : Center programs provide national

reference standards, measurement methods, supporting theory and data, and traceability to national standards.

The metrological products of these programs aid economic growth by promoting eauity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U. S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of rational regulatory policy and promote efficient functioning of technical programs of the Government.

The work of the Center is divided into two major programs: the Semiconductor Technology Program, carried out by the Semiconductor Electronics Division in Gaithersburg, MD, and the Signals and Systems Metrology Program, carried out by the Electrosystems Division in Gaithersburg and the Electromagnetic Fields and Electromagnetic

Technology Divisions in Boulder, CO. Key contacts in the Center are given on the

back cover; readers are encouraged to contact any of these individuals for further

information. To request a subscription or for more information on the Bulletin , write to CEEE Technical Progress Bulletin, National Bureau of Standards, Metrology

Building, Room B-358, Gaithersburg, MD 20899 or call (301) 975-2220.

Center sponsors : The Center Programs are sponsored by the National Bureau of Standards and a number of other organizations, in both the Federal and private sectors;

these are identified on page 39.

Note on Publication Lists : Guides to earlier as well as recent work are the publication lists covering the work of each division. These lists are revised and reissued

on an approximately annual basis and are available from the originating division.

The current set is identified in the Additional Information section, page 36.
CEEE Technical Progress Bulletin - October 1987

TABLE OF CONTENTS

INTRODUCTION

SEMICONDUCTOR TECHNOLOGY PROGRAM

research iniormation Center

-Nalionai bureau of Standards

Gaithersburg, Maryland 20899

Page 1 buoo

(Vti

c>v . . inside front cover

Silicon Materials 2 Gallium Arsenide Materials 3 Analysis Techniques 3 Dimensional Metrology 4

Packaging 4 Integrated Circuit Test Structures 5 Power Devices 5

Device Physics and Modeling 6

Radiation Effects 7 Insulators and Interfaces 7 FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 9

Waveform Metrology 9

Cryoelectronic Metrology 12

Antenna Metrology 15

Laser Metrology 16

Microwave and Millimeter-Wave Metrology 16

Optical Fiber Metrology 18

Electro-Optic Metrology 20

Complex Testing 21

Other Fast Signal Topics 2 2 ELECTRICAL SYSTEMS 23

Power Systems Metrology 23

Pulse Power Metrology 2 6

Superconductors 27

Magnetic Materials and Measurements 30

ELECTROMAGNETIC INTERFERENCE 31

Radiated Electromagnetic Interference 31

Conducted Electromagnetic Interference 36

ADDITIONAL INFORMATION 36

1987 CEEE CALENDAR 3 7 SPONSOR LIST 3 9

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 2 CEEE Technical Progress Bulletin - October 198 7 SEMICONDUCTOR TECHNOLOGY

Silicon Materials

Released for Publication

Robertson, P.J., Dumin, D. J. , Carver,

G.P., and Novotny, D.B., Examination

of Epitaxial Silicon Quality Versus

Silicon Thickness on Boron Phosphide

Layers, to be published in the Proceedings of the 1987 Spring Meeting of

the Materials Research Society, Anaheim, California, April 21-25, 1987.

It has been shown that (100) boron phosphide can be grown on (1 00) silicon

substrates and that device quality silicon can be grown on the BP layer.

Si-BP-Si structures have been proposed

as candidates for three-dimensional

integration and novel SOI structures.

High resistivity (=10 6 ft-cm) BP has been

grcwn on silicon substrates without heat

treatments. Results are reported for a

s ingle- temperature Si-BP-Si process

which utilizes 0.2 and 0.4 ym of high

resistivity BP and a single 1- to 5-ym

silicon epitaxial layer on which

p-channel MOS devices were manufactured.

Threshold voltage, subthreshold slope,

subthreshold current, effective linear

and saturation surface mobilities, sur- face doping concentration, and drain-tosource reverse breakdown voltage data

are presented to characterize the epitaxial films. Electron channeling patterns are presented to show high-quality

silicon crystal growth on all BP layers.

The 1- and 2-ym silicon layers were

doped as high as 3 x 10 17 cm-3

, and

devices manufactured on these layers did

not work properly. Device characteristics improved on thicker silicon layers.

Linear and saturation mobilities

remained virtually unchanged with 5-ym

values as high as 250 and 160 cm2 /V-s,

respectively. These values were lower

than bulk silicon mobilities at the same doping concentrations. Reverse breakdown voltage was shown to be a function

of silicon thickness reaching a maximum

of 35 V on the 5-ym silicon layer. The

suo threshold slope had an average value

of 90 mV/dec. The subthreshold current

decreased with increasing silicon thickness to a minimum of 1 0“ 3

3

a on the 5-ym

silicon layers which was comparable to

bulk silicon results.

[Contact: Gary P. Carver, (301)

975-2091

]

Recently Published

Hyland, S.L., Ast, P.G. , and Baghdadi,

A., Oxygen Measurements in Thin Ribbon Silicon, Journal of Crystal

Growth (Proceedings of the First International Symposium on Shaped Crystal

Growth, Budapest, Hungary, July 22-25,

1986), Vol. 82, Nos. (1/2), pp. 191-196

(North Holland, Amsterdam, 1987).

The oxygen content of thin silicon ribbons grown by the dendritic web technique was measured using a modification

of the ASTM method based on Fourier

transform infrared spectroscopy. Web

silicon was found to have a high oxygen

content, ranging from 13 to 19 ppma,

calculated using the new ASTM conversion

coefficient. The oxygen concentration

changed by about 10% along the growth

direction of the ribbon. In some sam- ples, a shoulder was detected on the

absorption peak associated with interstitial oxygen. A similar shoulder in

Czochralski-grown material has been

variously interpreted in the literature

as due to a complex of silicon, oxygen,

and vacancies, or to a phase of SiO^

developed along dislocations in the

material. In the case of web silicon,

it is not clear which is the correct

interpretation of this peak.

[Contact: Aslan Baghdadi, (301)

975-2062]

Mayo, S., and Lowney, J.R., Photoionization Cross-Section Studies of the

Platinum-Donor Center in Silicon,

Journal of Applied Physics, Vol. 61,

No. 7, pp. 2626-2632 (1 April 1987).

The relative photoionization cross sec- tion of the platinum donor center in

silicon was measured over the wavelength

range of 2.4 to 3.9 ym by electrical
CEEE Technical Progress Bulletin - October 1987 Page 3

Silicon Materials (cont'd.

)

deep-level optical spectroscopy (DLOS)

on a n

+p junction at 80 K. The data

were analyzed in terms of the latticecoupling model proposed by Ridley and

Amato, which was modified for valence

band nonparabolici ty . Good agreement

was obtained between the experimental

results and the model calculations of

the cross section with the energy level

of the donor at 0.320 ± 0.005 eV above

the valence band edge and a Huang-Rhys

factor S of approximately 1.4. This Svalue corresponds to a Franck -Condon

energy shift of 70 meV with a phonon

energy of 50 meV. Previously reported

photoionization data of the gold donor

were also fit by the same model yielding

S - 0.4, a surprisingly small value.

Estimates were made of the majority

carrier capture cross section for these

two levels and for the platinum acceptor

center in silicon which was measured

previously. These estimates, based on Ridley's quantum defect model and our measured S-values, are several orders of

magnitude smaller than the corresponding

measured values, indicative of the com- plex nature of these 5d-transi tion elements in silicon. More elaborate models, perhaps including anharmonicity of

the defect vibrations, are required to

understand these large capture cross sections

[Contact: Santos Mayo, (301) 975-2045]

Gallium Arsenide Materials

Released for Publication

Forman, R.A., Hill, J.R., Bell, M.I.,

White, G.S., Freiman, S.W., and Ford,

W . , Strain Patterns in Gallium Arsenide Wafers: Origins and Effects, to

be published in the Proceedings of the

International Symposium on Defect

Recognition and Image Processing in

III-V Compounds (DRIP 1987), Monterey,

California, April 27-29, 1987.

Using the rapid x-ray topographic system

described earlier (in DRIP I), we have

examined a large number of LEC GaAs

wafers, both commercial and research,

and have been able to identify the

sources of some of the observed patterns. We have also studied the effects

of the inhomogeneous strain on the fracture properties of the wafers. The high

gradients of strain cause deviations

from expected crack growth behavior in

fracture tests. These deviations

include crack velocity variations, and

crack tip deflections. The grown-in

defects cause point-to-point irreproducibility in hardness and toughness values

for this material. Sequential wafers

exhibit closely related topographs and

similar fracture properties. Inclusions

have been identified in indium-doped

wafers and produce a characteristic

topographic pattern when the inclusion

lies in the wafer under study. A characteristic strain pattern propagates

away from the inclusion and produces

annular rings in later wafers. The

relaxation of the bow-tie strain pattern

surrounding the inclusion to the annular

ring pattern is likely related to the

thermoelastic stress patterns described

by Jordan et al.

[Contact: Richard A. Forman, (301)

975-2047]

Analysis Techniques

Released for Publication

Bouldin, C.E., Forman, R.A., and Bell,

M.I., Silicon Photodiode for Fluorescence EXAFS

A large-area silicon diode is used as a fluorescence detector for extended x-ray

absorption fine structure (EXAFS) measurements. A direct comparison of this

diode detector relative to a gas ionization fluorescence detector is made.

Advantages of the diode detector

include: higher signal for a given

photon flux (due to higher quantum

efficiency), vacuum and cryogenic com- patibility, freedom from microphonic

noise, good linearity, extremely wide

dynamic range, operation without high

voltage or gas connections, very simple

electronics, and low cost. A brief
Page 4 CEEE Technical Progress Bulletin - October 1987

Analysis Techniques (cont'd.

)

comparison with other detection methods

tor fluorescence EXAFS is given. Use of

photodiodes for transmission EXAFS is

discussed.

[Contact: Charles E. Bouldin, (301)

975-2046]

Dimensional Metrology

Recently Published

Postek, M.T., Non-Destructive Submicron Dimensional Metrology Using the

Scanning Electron Microscope, Review

of Progress in NDE, Vol. 6B , D.O.

Thompson and D.E. Chimenti, eds.

(Plenum Publishing Corporation, 1987),

pp. 1 327-1 338.

The increasing evolution of microelectronics into the submicron region necessitates non-destructive examination of

these structures both for linewidth

measurement and defect inspection by

systems other than the optical microscope. The scanning electron microscope

operated in the low beam-voltage mode

has been recently employed in this work

due to its potentially high spatial

resolution and depth of field. This

paper discusses realistic applications

of the scanning electron microscope to

non-destructive microelectronics inspection and metrology in light of the present instrument specifications and capabilities and relates them to the processing controls required for submicron

metrology

.

[Contact: Michael T. Postek, (301)

975-2299]

Postek, M.T., and Joy, D.C., Submicrometer Microelectronics Dimensional

Metrology: Scanning Electron Microscopy, NBS Journal of Research, Vol.

92, No. 3, pp. 205-228 (May-June

1 987)

.

The increasing integration of microelectronics into the submicron region for

VHSIC and VLSI applications necessitates

the examination of these structures both

for linewidth measurement and defect

inspection by systems other than the

optical microscope. The low beam-voltage scanning electron microscope has

been recently employed in this work due

to its potentially high spatial resolution and large depth of field. This

paper discusses applications of the

scanning electron microscope to microelectronics inspection and metrology in

light of the present instrument specifications and capabilities, and relates

them to the processing controls required

for submicron processing.

[Contact: Michael T. Postek, (301)

975-2299]

Packaging

Released for Publication

Kane, D. , Moore, B.A., and Walters,

E.J. , RADC/NBS International Workshop

on Moisture Measurement and Control for

Microelectronics (IV), to be published as NBSIR 87-3588.

This fourth Workshop on Moisture Measurement and Control for Microelectronics served as a forum on moisture and/or

materials reliability problems and on

ways to control them or measure their

extent. Twenty-two presentations are

included which contain detailed information on hermeticity measurement and

definition; development of standard

packages for mass spectrome trie calibrations; moisture interaction with various

materials; and techniques that can be

used to measure moisture in microelectronics. It was clear from several

presentations in this workshop that a very systematic approach is needed when

organic materials are involved; all the

variables must be identified and studied

one at a time. This is the key to lotto-lot reproducibility, materials selection, and control; hence a better reliability at the design phase will decrease

this need for testing, hence the cost,

thus resulting in a greater satisfaction

to the customer.

[Contact: E. Jane Walters, (301)

975-2050]
CEEE Technical Progress Bulletin - October 1987 Page 5 Integrated Circuit Test Structures

Released for Publication

Linholm, L.W., and Radack, D. J. , OnChip Propagation Delay Measurement,

to be published in the Proceedings of

the 1987 IEEE VLSI Multilevel Conference, Santa Clara, California, June

1 4-1 7, 1 987.

The accurate measurement of gate propagation delay is needed for increasing

the accuracy of simulators and for com- paring device designs and evaluating

fabrication technologies. A digital

circuit is presented which can be used

to determine propagation delay of any

unclocked circuit element. The circuit

contains on-chip logic which allows

propagation delay measurement using a low-frequency parametric test system.

[Contact: Loren W. Linholm, (301)

975-2052]

Radack, D.J. , Swartz, T.C., Linholm,

L.W., and Cresswell, M.W., A Comprehensive Test Chip for the Characterization of Multi-Level Interconnect Processes, to be published in the Proceedings of the 1987 IEEE VLSI Multilevel Interconnect Conference, Santa

Clara, California, June 1 4-1 7, 1987.

A test chip for the evaluation and characterization of multi-level interconnect

processes has been developed. The test

chip contains test structures which

allow a process engineer to make com- parative, quantitative measurements for

evaluating the performance of selected

processes and equipment. This paper

describes the design and testing of

selected test structures and presents

initial test results.

[Contact: Loren W. Linholm, (301)

975-2052]

Recently Published

Linholm, L.W., Radack, D. J. , Reeve,

C.P., Cresswell, M.W., Lowry, L.R., and

Pessall, N. , Test Structures and

Expert Systems for Process Control,

Proceedings of SEMICON/West '87, San

Mateo, California, May 1 9-21, 1987, pp.

54-64.

This paper describes the test structures, test results, data analysis algorithms, and a developmen tal expert system which can be used as a means of

improving selected aspects of process

control. A prototype expert system has

been developed to allow rapid evaluation

of selected portions of a 1-]jm fabrication process. Test results from custom

designed test chips containing a variety

of structures comprise the input to the

expert system. The output is an

English-language process diagnosis.

Examples of a diagnosis provided by the

expert system for selected portions of a VLSI process are presented.

[Contact: Loren W. Linholm, (301)

975-2052]

Schafft, H.A., STATUS: Interlaboratory Electromigration Experiment,

Proceedings of the 1985 Wafer Reliability Assessment Workshop, Lake Tahoe,

California, October 21-23, 1 985, O.D.

Trapp, ed. , pp. 21 3-216 (1 986).

An update is presented of an interlaboratory electromigration experiment now underway. The purpose of the experiment

is to assess the reproducibility of

electromigration characterizations and

to develop guidelines for the design of

test structures, for methods to measure

t 5Q , and for reporting characterization

results. Fourteen laboratories, including two universities, are participating

in the experiment.

[Contact: Harry A. Schafft, (301)

975-2234]

Power Devices

Recently Published

Blackburn, D.L., Turn-Off Failure of

Power MOSFET's, IEEE Transactions on Power Electronics, Vol. PE-2, No. 2,

pp. 136-142 (April 1987). [Identical

paper appeared in PESC '85, Proceedings

of the Power Electronics Specialists
Page 6 CEEE Technical Progress Bulletin - October 1987

Power Devices (cont'd.)

Conference, Toulouse, France, June

24-28, 1985, pp. 429-435].

Experimental results of the failure of

power MOSFET's during inductive turn-off

are discussed. The electrical characteristics of these devices during failure are shown to be identical to those

of a bipolar transistor undergoing

second breakdown. Other comparisons of

the power MOSFET failure and bipolar

second breakdown are made. A nondestructive measurement system is used

that allows repeated measurements of the

failure characteristics as a function of

various parameters to be made on a single device. It is shown that commercially available power MOSFETs do not

fail as a result of dV/dt currents.

Drain voltage slew rates up to 22 V/ns

were studied. Other measurements show

that the drain voltage at which failure

occurs increases with temperature, the

critical current above which failure

occurs decreases with temperature, and

the magnitude of the load inductance has

no effect on the failure. The results

of this study are consistent with the

theory that activation of the parasitic

bipolar transistor initiates the power

MOSFET failure during turn-off.

[Contact: David L. Blackburn, (301)

975-2053]

Device Physics and Modeling

Released for Publication

Bennett, H.S., Numerical Simulations

on Neutron Effects on Bipolar Transistors.

A detailed device model that has been

verified by comparisons with experimental measurements on unirradiated, stateof-the-art bipolar devices has been

modified to include the effects of neutron radiation on carrier lifetimes,

concentrations, and mobilities. Numerical experiments on the degradation due

to neutron fluences in the dc common

emitter gains for bipolar transistors

with submicrometer emitter and base

widths are given and compared in general

terms with the few published measurements.

[Contact: Herbert S. Bennett, (301)

975-2079]

Lowney, J.R., and Bennett, H.S., Limitations of Isotropic Theory of Band-Gap

Narrowing in Si and GaAs Devices, to

be published in the Proceedings of the

IEEE Bipolar Circuits and Technology

Meeting, Minneapolis, Minnesota, September 21-22, 1987.

The theory of band-gap narrowing based

on uniform material is shown to be

invalid for devices with very large

doping gradients. Calculations also

show that enhanced narrowing results

from the built-in field.

[Contact: Jeremiah R. Lowney, (301)

975-2048]

Wilson, C.L., Hydrodynamic Carrier

Transport in Semiconductors with Multiple Band Minimums

.

Carrier transport equations for analysis

of semiconductor devices fabricated in

materials with multiple band minimums,

such as GaAs, are presented. This

revised formulation has several advantages over previous models. Separation

of the carrier transport into central

and satellite components improves numerical stability in numerical simulations

and allows the physical processes associated with each band to be modeled in

greater physical detail. This permits

processes previously neglected in hydrodynamic models, such as electron injection into insulating substrate material

and deep electron traps in GaAs transistors, to be included. A model of a GaAs

MESFET, which illustrates the importance

of the new physical effects and achieves

reasonable agreement with experiment

without use of adjustable parameters, is

presented as an example.

[Contact: Charles L. Wilson, (301)

975-2080]
CEEE Technical Progress Bulletin - October 1987 Page 7 Radiation Effects

Released for Publication

Singh, G. , Galloway, K.F., and Russell,

T . J . , Observation of Rebound in Power

MOSFETs, to be published in the Proceedings of the Natural Space Radiation

and VLSI Conference, Houston, Texas,

January 20-21, 1987.

Nonradiation-hardened n-channel power

MOSFETs were irradiated under a positive

gate bias. The irradiated transistors

were thermally annealed at different

temperatures with all terminals shorted,

and under positive gate bias, with

source and drain shorted. Threshold

voltage rebound was observed for some transistor types under certain experimental conditions.

[Contact: Thomas J. Russell, (301)

975-2073]

Insulators and Interfaces

Released for Publication

Carver, G.P., Kopanski, J. J. , Novotny,

D.B., and Forman, R.A., Specific

Contact Resistivity of Metal-Semiconductor Contacts — A New, Accurate

Method Linked to Spreading Resistance.

A new method to deduce the specific

contact resistivity of me tal- semi conductor contacts has been developed that

allows separation of the components

contributing to the total series resistance between two contacts. The principle of the method is the subtraction of

the semiconductor spreading resistance,

deduced from a four-contact resistivity

measurement, from the total two-contact

resistance. This procedure requires

geometrically well-defined small con- tacts that are accurately fabricated by

lithographic methods. Using the method,

accurate values were obtained for the

specific contact resistivity of an aluminum-1.5% silicon alloy to p-type silicon wafers having dopant densities from

5 x 1C)l i+ to 2 x 1 020 cm“ ^ , The specific

contact resistivity values are lower

than previously published values

obtained using earlier methods in which

parasitic and nonideal effects could not

be quantified or eliminated. The lower

values indicate that contact resistance

has a less limiting effect on the performance of integrated circuits than

presently believed.

[Contact: Gary P. Carver, (301)

975-2091

]

Carver, G.P., Novotny, D.B., and Kopanski, J.J., An Innovative Measurement

of Specific Contact Resistivity Confirms Lower Aluminum-Silicon Contact

Resistance, to be published in the

1987 IEEE VLSI Multilevel Interconnect

Conference, Santa Clara, California,

June 1 4-1 7, 1 987.

New accurate data prove that the value

of the aluminum-silicon specific contact

resistivity is much smaller than the

value determined previously by two-level

planar contact resistor structures. The new data were obtained using an innovative method based upon small, geometrically well-defined contacts, for which

the silicon spreading resistance can be

calculated self-consis tently . In this

method, the total series resistance is

measured at a contact window in an oxide

layer to a silicon wafer. Unlike twolevel planar structures, lateral and

vertical current crowding effects in the

metal layer are measured separately and

are not involved directly in modeling

the contact resistance. Using this new

method, values of the specific contact

resistivity between an aluminum alloy

containing 1.5% silicon and silicon

wafers were measured for p-type silicon

resistivities in the range from 0.006 to

25 fi-cm and for n-type silicon resistivities in the range from 0.0014 to

0.0026 fa-cm. The specific contact

resistivity values we obtained are about

five times smaller than values reported

from two-level planar structures, suggesting that aluminum may be useful for

contact dimensions as small as 0.5 ym on

a side. With the new results, multilevel conductor systems can be designed
Page 8 CEEE Technical Progress Bulletin - October 1987

Insulators and Interfaces (cont'd.

)

tor optimal performance.

[Contact: Gary P. Carver, (301)

975-2091

J

Robertson, P.J., Dumin, D.J., Carver,

G.P., and Novotny, D.B., Examination

of Epitaxial Silicon Quality Versus

Silicon Thickness on Boron Phosphide

Layers, to be published in the Proceedings of the 1987 Spring Meeting of

the Materials Research Society, Anaheim, California, April 21-25, 1987.

It has been shown that (100) boron phosphide can be grown on (1 00) silicon

substrates and that device quality silicon can be grown on the BP layer.

Si-BP-Si structures have been proposed

as candidates for three-dimensional

integration and novel SOI structures.

High resistivity (=10^ J2-cm) BP has been

grown on silicon substrates without heat

treatments. Results are reported for a

s ingle-temperature Si-BP-Si process

which utilizes 0.2 and 0.4 pm of high

resistivity BP and a single 1- to 5-ym

silicon epitaxial layer on which

p-channel MOS devices were manufactured.

Threshold voltage, sub threshold slope,

subthreshold current, effective linear

and saturation surface mobilities, sur- face doping concentration, and drain-tosource reverse breakdown voltage data

are presented to characterize the epitaxial films. Electron channeling patterns are presented to show high-quality

silicon crystal growth on all BP layers.

The 1- and 2-ym silicon layers were

doped as high as 3 x 10 17 cm-3

, and

devices manufactured on these layers did

not work properly. Device characteristics improved on thicker silicon layers.

Linear and saturation mobilities

remained virtually unchanged with 5-ym

values as high as 250 and 160 cm2 /V-s,

respectively. These values were lower

than bulk silicon mobilities at the same

doping concentrations. Reverse breakdown voltage was shown to be a function

of silicon thickness reaching a maximum

of 35 V on the 5-ym silicon layer. The

subthreshold slope had an average value

of 90 mV/dec. The subthreshold current

decreased with increasing silicon thickness to a minimum of 1 0“1 3 A on the 5-ym

silicon layers which was comparable to

bulk silicon results.

[Contact: Gary P. Carver, (301)

975-2091

]

Recently Published

Carver, G.P. , Novotny, D.B., Hershey,

R., and Luther, J.E., Double-Level

Metallization: Annual Report for

October 1, 1985 to September 30,

1986, NBSIR 87-3579 (June 1 987).-

An outline for a double-level metal

process for the fabrication of circuits

having a minimum linewidth of 3 ym is

described. The process is designed to

be implemented in the Microelectronics

Processing Facility at Fort Meade, Maryland, where single-level metallization

circuits are already in production. A

summary is included of the related

research performed in the Semiconductor

Processing Research Laboratory at the

National Bureau of Standards.

[Contact: Gary P. Carver, (301)

975-2091

]

Chandler-Horowi tz , D. , and Candela,

G.A., Ellipsometric Instrumentation

for Optical Metrology in Thin Films

,

Proceedings of SEMICON/West '87, San

Mateo, California, May 1 9-21, 1 987, pp.

1 26-1 32.

Nondestructive optical characterization

of thin-film structures on substrates by

ellipsometry is a precise measurement

technique which may lead to accurate

metrology. In order to study problems

important to semiconductor technology,

we have built a spectroscopic, multiangle of incidence, rota ting-analyzer

e llipsome ter. The primary metrological

requirement for accuracy is to obtain

the uncertainties in the instrumental

data for a particular sample surface.

These data are the ellipsometric values

for A, ip, the angle of incidence <J>, and

the wavelength X. Then a mathematical

analysis involving surface modeling is
CEEE Technical Progress Bulletin - October 1 987 Page 9

Insulators and Interfaces (cont'd. ) performed to find both the best values

of the film parameters and their uncertainties. In practice there are conditions which can optimize both the uncertainties in A and ijj, and the resulting

uncertainties in the film parameters.

Both the angles of incidence and of the

polarizer can be adjusted for optimum

accuracy in determining the values for A and g when the instrument is used in the

rota ting-analyzer mode. The ability of

this instrument with its increased accuracy can lead to a better understanding

of complex multilayered samples, such as proposed semiconductor device starting

materials, e.g., SIMOX.

[Contact: Deane Chandler-Horowi tz

,

(301) 975-2084]

Mountain, D.J., Gallcway, K. F., and

Russell, T.J. , The Effect of PostOxidation Anneal on the Electrical

Characteristics of Thin Oxides,

Journal of the Electrochemical Society,

Vol. 1 34, Mo. 3, pp. 747-479 (March

1 987)

In this study, the effects of pre- and

post-oxidation treatments on thin

(~20-nm) gate oxide properties have been

evaluated. Pre-oxidation cleans and

post-oxidation anneal (POA) times and

ambients were compared. Flatband

voltage, oxide field breakdown, and

average density of interface trap

measurements were used to evaluate the

different sequences. The data indicate

that an optimum oxidation sequence for

thin gate oxides can be designed. A

sacrificial oxidation cleaning procedure

and a long (1 20-min) POA in nitrogen

gave the oxide with the best electrical

characteristics.

[Contact: Thomas J. Russell, (301)

975-2073]

FAST SIGNAL ACQUISITION, PROCESSING,

AND TRANSMISSION

Waveform Metrology

Released for Publication

Lagnese, J. , and McKnight, R.H. , Calculation of Confidence Intervals for

High Voltage Impulse Reconstruction.

A recently described algorithm designed

to calculate confidence intervals for

solutions to ill-posed problems subject

to inequality constraints is applied to

the calculation of confidence intervals ^ for a high-voltage impulse distorted by

a divider system. Applications of the

method to measurements made with resistive and capacitive dividers illustrate

its value for obtaining useful stochastic error bounds for high voltage

impulse restoration.

[Contact: Ronald H. McKnight, (301 ) 975-2431

]

Lagnese, J. , and McKnight, R.H., Estimates of Confidence Intervals for

Divider Distorted Waveforms, to be

published in the Proceedings of the 5th

International High Voltage Symposium,

Braunschweig, West Germany, August

20-21, 1987.

This paper describes a method for com- puting confidence intervals for a highvoltage impulse distorted by a divider

system. The technique is based on a recent algorithm designed to calculate

confidence intervals for solutions to

ill-posed problems subject to inequality

constraints. Applications of the method

to measurements made with a resistive

divider illustrate its value for obtaining useful stochastic error bounds for

high-voltage impulse restoration.

[Contact: Ronald H. McKnight, (301)

975-2431]

Lawton, R.A., and Anderson, W.T.,- Two

Layer Dielectric Stripline Structure

Modeling and Measurement.

Further development of the modeling of

the two-layer dielectric stripline

structure is reported by computing the

scattering parameter derived from

the model and comparing the computed

value with the measured value over the

frequency range from 45 MHz to 25 GHz.

The sensitivity of S 2 i to various
Page 1

0

CEEE Technical Progress Bulletin - October 1987

Waveform Metrology (cont'd.)

parameters of the structure is also

discussed. Examples of measurement and

modeling of the silicon dioxide on silicon system and modeling of the

gallium arsenide on silicon system are

given.

[Contact: William L. Gans, (303)

497-3538]

Oldham, N.M., and Parker, M.E. , NBS

Calibration System for AC Voltage, to

be published in the Proceedings of the

1 987 National Conference of Standards

Laboratories Workshop and Symposium,

Denver, Colorado, July 1 2-16, 1 987.

A semi-automatic system for calibrating

high-accuracy ac voltmeters and calibrators is described. The system relies on

measurements using coaxial thermal voltage converters to achieve uncertainties

of 5 to 1 50 ppm over the frequency range

of 1 0 Hz to 1 MHz. Specialized hardware

and measurement techniques make it possible to achieve these uncertainties in

test periods of approximately one

minute. Random errors introduced by the

system are typically less than 2 ppm

(one standard deviation)

.

[Contact: N. Michael Oldham, (301)

975-2408]

Oldham, N.M., Parker, M.E., Young, A.,

and Smith, A.G., A High Accuracy, 10

Hz - 1 MHz Automatic AC Voltage Calibration System, to be published in

IEEE I&M Transactions, Conference

Record, Boston, Massachusetts, April

27-29, 1987.

An automatic system for calibrating

high-accuracy ac voltmeters and

calibrators is described. The system is

based on traditional coaxial thermal

voltage converters to provide ac voltage

measurement uncertainties of 5 to 20 ppm

in the audio frequency range and 5 to

2 50 ppm over the full range from 10 Hz

to 1 MHz at voltages between 0.5 to 600

V. Lower levels (0.01 to 0.5 V) are realized using wideband inductive dividers. Specialized hardware and measurement techniques make it possible to

achieve these uncertainties in test

periods of approximately one minute.

Random errors introduced by the measurement system are typically less than 2 ppm (one standard deviation)

.

[Contact: N. Michael Oldham, (301)

975-2408]

Recently Published

Sorrells, J.R., A Survey of Electronic

Measurement Needs Below 10 MHz, NBSIR

87-3549 (June 1 987)

.

The results of a survey to assess the

electronic measurement needs from dc to

1 0 MHz are presented. The questionnaire

used in the survey covered three broad

areas of measurement need: 1 ) basic

electrical quantities and related precision instruments, 2) automatic test

equipment and other complex measurement

systems, and 3) conducted electromagnetic interference. The data provided

by 527 respondents are summarized, and

the results of various analyses are described. Several conclusions, suggested by the analyses, are also discussed.

[Contact: Barry A. Bell, (301)

975-2402]

Souders, T.M., Schoenwe tter, H.K. , and

Hetrick, P.S., Characterization of a Sampling Voltage Tracker for Measuring

Fast, Repetitive Signals, Proceedings

of the IEEE Instrumentation and Measurement Technology Conference,

IMTC/87, Boston, Massachusetts, April

27-29, 1987, pp. 240-243.

An equivalent time-sampling and digitizing system is described, together with

test methods for characterizing its

dynamic performance. Time-base errors,

linearity errors, step-response parameters, and frequency response are considered, and typical measurement results

are included. The system is capable of

state-of-the-art measurements at rf

frequencies.

[Contact: T. Michael Souders, (301)

975-2406]
CEEE Technical Progress Bulletin - October 1987 Page 1

Waveform Metrology (cont'd.

)

Stenbakken, G.N., Characterizing

Square and Triangular Waveforms

,

Proceedings of the IEEE Instrumentation

and Measurement Technology Conference,

IMTC/8 7, Boston, Massachusetts, April

27-29, 1 987, pp. 9-11.

A method has oeen developed for determining the parameters and errors of

square and triangular waveforms relative

to idealized waveforms, even when the

waveforms to be characterized are highly

distorted. The method is based on measurements obtained by sampling the waveform. Then, an idealized waveform is

fitted to the sampled data using a least-squared-error algorithm. The

errors in the waveform are defined as the deviations between the data samples

and the ideal waveform. Also, the

parameters of the measured waveform are

defined as the corresponding parameters

of the fitted ideal waveform.

[Contact: Gerard N. Stenbakken, (301)

978-2440]

Stenbakken, G.N., Laug, O.B., Kibalo,

T.H., Bell, B.A., and Perrey, A.G.

,

NBS Wideband Sampling Wattmeter, NBS

Technical Note 1221 (May 1987).

The design and operation of a wideband

sampling wattmeter capable of measuring

distorted power signals with fundamental

frequencies from 1 Hz to 1 0 kHz and

harmonics up to 100 kHz is described.

The microcomputer-controlled wattmeter

uses asynchronous sampling of the voltage and current signals. The errors

associated with this type of operation

are described, as are various methods of

correcting some of these errors. A

hardware multiplier-accumulator allows

a large number of power signal samples

to be integrated for each measurement.

Sampling rates are variable up to a maximum of 300 kHz . A direct-memoryaccess unit is used to capture 4096

samples of both the voltage and current

signals. These data are used to calculate the average and rms values of these

signals

A special feature of the sampling wattmeter is the use of programmable time

delay circuits to compensate for differential time delays between the two input

channels. Performance tests of the

wattmeter show that it has a measurement

uncertainty of less than ±0.1 percent of

full-scale amplitude over the abovedescribed frequency range.

This technical note gives schematic

diagrams of the circuits used in this

wattmeter and describes their operation.

The software is also described, and flow

charts and selected program listings are

provided for the programs written in

PASCAL. The results of calibration of

the instrument over the past year are

also presented.

[Contact: Gerald N. Stenbakken, (301)

975-2440]

Turgel, R.S., and Vecchia, D.F., Precision Calibration of Phase Meters,

Proceedings of the IEEE Instrumentation

and Measurement Technology Conference,

IMTC/8 7, Boston, Massachusetts, April

27-29, 1 987, pp. 1 35-1 37.

A procedure and statistical analysis for

the calibration of precision phase

meters has been developed. The method

can be applied equally to the calibration of any instrument that has a nominally linear response characteristic.

Using statistical tests, the method

checks whether the calibration data fit

a linear model and then determines the

linear equation from which the corrected

calibration values are computed. Because random fluctuations tend to mask

the limiting mean of the instrument

response, the corrections are based on

the values computed from the calibration

curve, rather than on the actual calibration data.

To obtain the data, test points are

chosen to cover the range to be calibrated, and several sets of calibration

readings are taken by comparing the

instrument under test to a standard.

The replication of the data at the

selected test points serves to charac-
Page 1

2

CEEE Technical Progress Bulletin - October 1987

Waveform Metrology (cont'd.

)

terize the repeatability and to decide

whether the linear model is appropriate.

It the assumption of a linear model is

correct, the data are fitted to a straight line (calibration curve), and

statistical tests are used to determine

if the slope and intercept of the calibration curve are significantly different from their ideal values.

As a next step, the error limits of the

readings from the instrument under test

are computed for three conditions: no

corrections applied, only a constant

correction applied, and the full calibration curve used for the corrections.

The three error limits are then compared

to the instrument specifications to

determine which type of calibration

correction, if any, is needed.

[Contact: Raymond 8. Turgel, (301)

975-2420]

Cryoelectronic Metrology

Released for Publication

Go, D. , Hamilton, C.A., Lloyd, F.L.,

Dilorio, M.S., and Withers, R.S.,

Superconducting Analog Track-andHold.

A superconducting analog track-and-hold

circuit has been designed and tested.

Experimental results report a 1- to 2-

GHz oandwidth and a 35-dB dynamic range.

Model calculations indicate that within

the limits of the fabrication technology, substantially higher bandwidths

reaching 20 GHz can .be achieved.

[Contact: Diane Go, (303) 497-3770]

Hamilton, C.A., Lloyd, F.L., and

burroughs, C., Josephson Voltage

Array Development at the NBS in

Boulder, to be published in the Proceedings of the 1987 National Conference of Standards Laboratories Workshop

and Symposium, Denver, Colorado, July

1 2-1 6, 1 987.

This paper reviews the principles of

Josephson array voltage standards and

discusses the four important goals of

array development at the NBS in Boulder.

These goals are: 1 ) the fabrication of

more reliable and stable devices, 2) the

development of larger arrays to achieve

voltages approaching 10V, 3) the

development of an automated system to

facilitate a wide variety of calibrations, and 4) the support of a rapidly

growing list of standards laboratories

using our array devices.

[Contact: Clark A. Hamilton, (303)

497-3740/3988]

Kautz, R.L., Activation Energy for

Thermally Induced Escape from a Basin

of Attraction.

A new method for calculating activation

energies in noneguilibrium systems is

presented. In the limit of low temperatures, the most probable path for escape

from a basin of attraction (a generalization of the classical problem of

escape from a potential well) is the

path which minimizes the available

thermal noise energy required for

escape. This minimum energy is the

activation energy of escape.

[Contact: Richard L. Kautz, (303)

497-3391 or -3988]

Lloyd, F.L., Hamilton, C.A., Beall,

J.A., Go, D. , Ono, R.H., and Harris,

R.E., A Josephson Array Voltage

Standard at 10 Volts.

The technology of Josephson voltage

standards has been extended to an array

of 14,184 junctions which is capable of

generating over 150,000 quantized voltage levels spanning the range from -1 2

to +12 V. This makes possible the

direct calibration of 1 0-V zener reference standards without the use of a voltage divider.

[Contact: Frances L. Lloyd, (303)

497-3254/3988]

Raisanen, A.V. , Crete, D.G. , Richards,

P.L., and Lloyd, F.L., A 100 GHz SIS

Quasiparticle Mixer With 10 dB Coupled

Gain, to be published in the Proceed-
CEEE Technical Progress Bulletin - October 1987 Page 1

3

Cryoelectronic Metrology (cont'd.

)

ings of the 1987 IEEE MTT-S International Microwave Symposium, Las Vegas,

Nevada, June 9-1 1, 1 987.

We have tested a superconducting quasiparticle mixer for 85 to 110 GHz which

gives much larger coupled gain than has

been previously observed. When operated

with a negative dynamic resistance of

about 2000 ft, the maximum coupled gain

was GM (double sideband [DSB] ) = 12.5 ± 2.5 dB [GM

(single sideband) = 9.5 ± 2.5 dB]. The associated mixer noise

temperature was 15.9 K (DSB). Large

gain was also observed with large positive dynamic resistance, giving the

lowest mixer noise temperature of 12.4 K

(DSB)

[Contact: Frances L. Lloyd, (303)

497-3254 or -3988]

Zimmerman, J.E., Beall, J. A., Cromar,

M.W., and Ono, R.H., Operation of a YBa

2Cu3°x rf-s ^1D at 81 K -

An rf-SQUID has been made from bulk

YBa

2 Cu

3 O

x

. The device displays quantum interference effects and operates

with useful signal levels up to 81 K. The SQUID is formed from a ring of

YBa^Cu

3 0x which is broken in the cryogenic environment and then recontacted.

Estimates of the SQUID noise performance

are given.

[Contact: James A. Beall, (303)

497-5989]

Recently Published

Cirillo, M., and Lloyd, F.L., Phase

Lock of a Long Josephson Junction to an

External Microwave Source, Journal

of Applied Physics, Vol. 61, No. 7, pp.

2581-2585 (April 1 987)

A long Josephson junction dc biased on a zero-field singularity and emitting

radiation at microwave frequencies is

irradiated with external microwave

power. This power can be supplied

either by a room- temperature oscillator

or by another long junction. We find

that the oscillations of the junction

can lock coherently to the external

signal for frequency intervals ranging

from 500 kHz to 50 MHz. The dependence

of the width of these intervals of

coherence on the external microwave

power is measured for the case in which

the power is generated by a room- temperature oscillator.

[Contact: Frances L. Lloyd, (303)

497-3254 or 3988]

Crete, D.G. , McGrath, W.R., Richards,

P.L., and Lloyd, F.L., Performance of

Arrays of SIS Junctions in Heterodyne

Mixers, IEEE Transactions on Microwave Theory and Techniques, Vol. MTT35, No. 4, pp. 435-440 (April 1987).

We have made a systematic experimental

study of the performance of millimeterwave quasiparticle heterodyne mixers

which use arrays of superconductor-insulator-superconductor (SIS) tunnel junctions. Sets of arrays with N = 1, 5,

10, 25, and 50 junctions in series were

fabricated by photolithography. All of

the arrays in a given set were made on a single wafer so that their response time

parameters oj s R

n

C were the same (oos = signal frequency; Rn = junction

normal-state resistance; C = junction

capacitance) . Junction areas were

scaled so that the total impedance was

the same for each array in a set. Sets

of arrays from four wafers with values

of 03 S RN

C ranging from 2.6 to 13 were

evaluated in mixers at 33 and 36 GHz.

These measurements showed that the

signal power required to saturate the

mixers varies as N 2

, and the conversion

efficiency is nearly independent of N

for all values of (jj s RN

C. The mixer

noise temperature is independent of N

for large values of gjs Rn

C. Therefore, the dynamic range of an SIS quasiparticle mixer can increase in proportion to N 2 . For small values of

to s R

N C, however, the mixer noise

increases systematically with N. This

correlation suggests that the junction

capacitance affects the coupling between

junctions that can contribute to the

noise.
Page 1

4

CEEE Technical Progress Bulletin - October 1987

Cryoelectronic Metrology (cont'd.

)

[Contact: Frances L. Lloyd, (303) 497-

3254]

McDonald, D.G. , Novel Superconducting

Thermometer for Bolometric Applications, Applied Physics Letters, Vol.

50, Do. 1 2, pp. 775-777 (March 23,

1 987)

.

The temperature dependence of the magnetic penetration depth in a superconductor is proposed as a basis for a sensitive thermometer. This depth is

monitored through the inductance of a microstrip transmission line, which is

incorporated into an impedance measuring

bridge. The bridge is envisioned as an integrated circuit with all critical

components at low temperature. It is

estimated that the contribution to the

noise equivalent power by the sum of the

Josephson noise and the preamplifier

noise can be reduced to about 7 x 10 _2 ° watt per root hertz, which is approximately four orders of magnitude below

currently realized values. Performance

of this device as a bolometer is limited

by noise from the thermal conductance of

the bolometer mount with the present

state of the art.

[Contact: Donald G. McDonald, (303)

497-51 1 3]

Raisanen, A.V. , Crete, D.G., Richards,

P.L., and Lloyd, F.L., Low Noise SIS

Mixer with Gain for 80-115 GHz, Proceedings of the ESA Workshop on a Space-Borne Sub-Millimetre Astronomy

Mission, Segovia, Spain, June 4-7

,

1986, pp. 255-258 (European Space

Agency, Paris, France, 1986). [See

also a more extensive paper by the same

authors published in the International

Journal of Infrared and Millimeter

Waves, Vol. 7, No. 12, pp. 1 835-1 852

(1 986) . ] Several superconduc tor-insulatorsuperconductor (SIS) quasiparticle mix- ers have been designed and tested for

the frequency range from 80 to 115 GHz.

The sliding backshort is the only adjustable radiofrequency (RF) tuning element. The RF-filter reactance is used

as a fixed RF-matching element. A mixer

which uses a single 2x2 ym2 Pb-alloy

junction in a 1 /4-height waveguide mount

has a coupled conversion gain of

GM (double sideband [DSB] ) = 2.6 ± 0.5

aB with an associated noise temperature

of TM

(DSB) = 16.4 ± 1.8 K at the best

DSB operation point. The receiver noise

temperature TR

(DSB) is 27.5 ± 0.8 K. This mixer provides a single-sideband

(SSB) receiver noise temperature below

50 K over the frequency range from 91 to

96 GHz, the minimum being TR

(SSB) = 44

± 4 K.

[Contact: Frances L. Lloyd, (303)

497-3254 or -3988]

Raisanen, A.V. , Crete, D.G. , Richards,

P.L., and Lloyd, F.L., Wide-Band Low

Noise MM-Wave SIS Mixers With a Single

Tuning Element, International Journal

of Infrared and Millimeter Waves, Vol.

7, No. 12, pp. 1 835-1852 (1 986).

Several superconductor-insulatorsuper conduc tor (SIS) quasi-particle

mixers have been designed and tested for

the frequency range from 80 to 115 GHz.

The sliding backshort is the only adjustable radiofrequency (RF) tuning element. The RF filter reactance is used

as a fixed RF matching element. A mixer

which uses a single 2x2 ym2 Pb-alloy

junction in a quarter-height waveguide

mount has a coupled conversion gain of

GM (double sideband [DSB] ) = 2.6 ± 0.5

dB with an associated noise temperature

of T^(DSB) = 16.4 ± 1.8 K at the best

DSB operation point. The receiver noise

temperature T^(DSB) is 27.5 ± 0.8 K

for the mixer test apparatus. This

mixer provides a s Ingle-s ideband (SSB)

receiver noise temperature below 50 K

over the frequency range from 91 to 96

GHz, the minimum being T^(SSB) = 44 ± 4 EC. Another mixer with an array of

five 5x5 ym 2 junctions in series in a full-height-waveguide mount has much

lower noise temperature T^(DSB) = 6.6

± 1.6 K, but less gain GM (DSB) = -5.1

± 0.5 dB

.

[Contact: Frances L. Lloyd, (303)

497-3254 or -3988]
CEEE Technical Progress Bulletin - October 1987 Page 1

5

Antenna Metrology

Released for Publication

Camell, D. , Cruz, J.E., and Larsen, E.B,

NBS Calibration Procedures for Horizontal Dipole Antennas (25 to 1000

MHz), to be published as NBS Technical Note 1 309.

This publication describes the theoretical basis and test procedures for horizontally polarized half wavelength

dipole calibration at the National

Bureau of Standards. Two different

techniques and two different test sites

are used. The standard field method is

used in the anechoic chamber in the

frequency range of 200 MHz to 1000 MHz.

The standard antenna method is used at

the open-field site in the frequency

range of 25 MHz to 1 000 MHz . Procedures

for both techniques are explained and

measurement setups are illustrated.

Measurement uncertainties are discussed.

Sample reports are included for both

methods

[Contact: Dennis Camell, (303)

497-321 4]

FitzGerrell, R.G., Three PC-Computer

Programs for Antenna Calculations

Primarily for Use Below 1000 MHz.

This article describes three computer

programs used frequently by the author

when working on various antenna measurement projects in the frequency range

below 1000 MHz. These programs were

originally written in FORTRAN 4 and run on various main-frame computers at the

NBS Boulder Laboratories. During the

last year, they were converted, essentially intact, to FORTRAN 77 and com- piled using IBM Professional FORTRAN

installed on an IBM PC/XT. As a result

of this choice of compilers, a math

co-processor is required (8087 for the

XT) to run the *.EXE files.

[Contact: Mark T. Ma, (303) 497-3800]

Francis, M.H., and Stubenrauch, C.F.,

Comparison of Measured and Calculated

Antenna Side Lobe Coupling Loss in the

Near Field Using Approximate Far-Field

Data.

Computer programs are presently in

existence to calculate the coupling loss

between two antennas provided that the

amplitude and phase of the far field are

available. However, for many antennas

the complex far field is not known accurately. In such cases it is nevertheless possible to specify approximate far

fields from a knowledge of the side lobe

level of each antenna along the axis of

separation, and the electrical size of

each antenna. Measurements of nearfield coupling loss between two moderate

sized microwave antennas were done to

determine the effectiveness of using

approximate side lobe level data instead

of the detailed far fields. Comparison

of the measured results to those from

the computer program ENVLP indicates

that the use of approximate far fields

gives an estimate of the coupling loss

with an uncertainty of about ±5 dB

[Contact: Michael H. Francis, (303)

497-5873]

Recently Published

FitzGerrell, R.G., Standard Linear

Antennas, 30 MHz to 1000 MHz, Proceedings of the Fifth International

Conference on Electromagnetic Compatibility, University of York, England,

September 29-October 2, 1986 (Sponsored

by the Institution of Electronic & Radio Engineers, London, England) , pp.

1 47-1 53.

Simple linear antennas are described

that are designed to operate in the 30-

MHz to 1 000 -MHz frequency range. Commercial coaxial hybrid junctions are used as balanced- to-unbalanced transmission line transformers (baluns) for the

dipole antennas. The monopoles are fed

unbalanced against a large ground

screen. Calculated site attenuation

(insertion loss) between pairs of these

antennas over an assumed perfectly con- ducting plane ground is compared to

insertion loss data measured using the

30 m by 60 m NBS ground screen. It is

assumed that one-half of the mean value

of the difference between the calculated

and measured insertion loss data.
Page 16 CEEE Technical Progress Bulletin - October 1987

Antenna Metrology (cont'd.

)

expressed in decibels, is a good estimate of individual antenna performance.

For the antennas described here, this

measure of performance is typically

<0.05 dB and on the outside, <0.42 dB

.

[Contact: Richard G. FitzGerrell, (303)

497-3737]

Muth, L.A., Displacement Errors in

Antenna Near-Field Measurements and

Their Effect on the Far Field, NBS

Technical Note 1306 (October 1986)

[also accepted for publication in IEEE

Transactions on Antennas and Propagation] . The effects of probe-displacement errors

in the near-field measurement procedure

on the far-field spectrum are studied.

Expressions are derived for the displacement error functions that maximize

the fractional error in the spectrum

both for the on-axis and off-axis directions. Planar x-y and z-displacement

errors are studied first, and the

results generalized to position errors

in cylindrical and spherical scanning.

Near-field models are used to obtain

order-of-magni tude estimates for the

fractional error as a function of relevant scale lengths of the near field,

defined as the lengths over which significant variations occur.

[Contact: Lorant A. Muth, (303)

497-3603]

Laser Metrology

Recently Published

Bennett, H.E. , Guenther, A.H., Milam,

D., and Newnam, B.E., Laser Induced

Damage in Optical Materials: 1984,

NBS Special Publication 727 (October

1 986)

.

The Sixteenth Annual Symposium on Optical Materials for High Power Lasers

(Boulder Damage Symposium) was held at

the National Bureau of Standards in

Boulder, Colorado, October 15-17, 1984.

The Symposium was held under the auspices of ASTM Committee F-1, Subcommittee on Laser Standards, with the joint

sponsorship of NBS, the Defense Advanced

Research Projects Agency, the Department

of Energy, the Office of Naval Research,

and the Air Force Office of Scientific

Research. Approximately 200 scientists

attended the Symposium, including representatives of the United Kingdom,

France, West Germany, and the Netherlands. The Symposium was divided into

sessions concerning Materials and Measurements, Mirrors and Surfaces, Thin

Films, and Fundamental Mechanisms. As

in previous years, the emphasis, of the

papers presented at the Symposium was directed toward new frontiers and new developments. Particular emphasis was given to materials for high power apparatus. The wavelength range of prime

interest was from 10.6 ym to the uv region. Highlights included surface

characterization, thin-f ilm-subs trate

boundaries, and advances in fundamental

laser-matter threshold interactions and

damage mechanisms. Harold E. Bennett of

the Naval Weapons Center, Arthur H. Guenther of the Air Force Weapons Laboratory, David Milam of the Lawrence

Livermore National Laboratory, and Brian

E. Newnam of the Los Alamos National

Laboratory were co-chairmen of the Symposium. The Seventeenth Annual Symposium was scheduled for October 28-30, 1985

at the National Bureau of Standards,

Boulder.

[Contact: Aaron A. Sanders, (303)

497-5341

]

Microwave and Millimeter-Wave Metrology

Released for Publication

Adair, R.T., and Russell, D.H., A

Calibration Service for 30 MHz Attenuation and Phase Shift, to be published

as NBS Technical Note 1310.

A calibration service currently being

offered by NBS for attenuation and phase

shift at 30 MHz is described. The

service offers measurements on coaxial

attenuators that are either fixed (standard attenuation) or variable for incre-
CEEE Technical Progress Bulletin - October 1987 Page 1

Microwave & Millimeter-Wave (cont'd.

)

mental (step) attenuation. Waveguidebelow-cutoff variable attenuators with

coaxial connectors are also calibrated

for incremental attenuation. Ranges of

capabilities and estimated limits of

systematic and random uncertainty are presented.

Calibration of phase shifters which

provide fixed (insertion) phase shift

and those with variable phase shift

(phase shift difference) are described.

Ranges of phase shift and estimated

limits of uncertainty are given in

degrees. However, a smaller portion of

this document is devoted to this calibration service since it is requested

only infrequently.

Definitions, capabilities of the system

and techniques of calibration are given.

The standards, measurement accuracies,

results from intercomparisons, quality

assurance, and statistical control of

the system are discussed and analyzed.

Representative reports of calibration

are also included.

[Contact: David H. Russell, (303)

497-3148]

Larsen, N.T., Microwave Power Standards at the National Bureau of Standards, to be published in the Proceedings of the 1987 National Conference of Standards Laboratories Workshop

and Symposium, Denver, Colorado, July

1 2-1 6, 1987.

A general review of the history and

present status of the microwave power

standards in use at the National Bureau

of Standards is presented. The standards are calorimeters, and the quantity

measured is "effective efficiency." The

calibration services are based on these

standards. The design and evaluation of

these standards is discussed.

[Contact: Neil T. Larsen, (303)

497-371 1

]

Saulsbery, L.F., and Adair, R.T. , ANA

Measurement Results on the ARFTG

Traveling Experiment, to be published

in the 28th ARFTG Conference Digest.

The Automatic RF Techniques Group

(ARFTG) Executive Committee has

assembled two traveling measurement

assessment kits. Each of these kits

consists of 1-dB, 20-dB, 40-dR, and 60-

dB attenuators; a 50-Q termination; a

1 0-cm air line; 1.2-VSWR and 2.0-VSWR

mismatched terminations; and a shortcircuit termination. These devices are

equipped with precision 7-mm coaxial

connectors. The traveling kits are being circulated among measurement

laboratories who wish to assess their

ability to measure reflection coefficient, attenuation, and phase shift

from 300 MHz to 17 GHz-. The results

obtained on ten different automated

measurement systems are presented.

[Contact: Gerome R. Reeve, (303)

497-3557]

Recently Published

Adair, R., Reeve, G. , and Gatterer,

L.E., The Expanding Need for Microwave and Millimeter Wave Calibration

Services, National Conference of

Standards Laboratories Newsletter, Vol.

27, No. 1, pp. 21-31 (January 1987).

Several technology surveys concerning

microwave- and millimeter-wave measurement needs and capabilities have recently been conducted by the National Bureau

of Standards Boulder Laboratories, and

other organizations. The results of

some of these studies which covered the

frequency range from 1 GHz to above 200

GHz are summarized. Current microwaveand millimeter-wave standards and calibration capabilities at the National

Bureau of Standards are reviewed and

compared with national needs. The lack

of national standards in certain frequency bands may lead to problems with

the specification, acceptance testing,

calibration, and critical • use of some components and systems. Plans to fulfill unmet needs in the freguency range

are also presented.

[Contact: Gerome R. Reeve, (303)

497-3557]
Page 1

8

CEEE Technical Progress —— Bulletin—- October 1987

• Microwave & Millimeter-Wave (cont'd.

)

Daywitt, W.C. , A Simple Technique for

Determining Joint Losses on a Coaxial

Line from Swept-Frequency Reflectometer

Data, CPEM 86 Digest, 1986 Conference

on Precision Electromagnetic

Measurements, R.F. Dziuba, Editor,

National Bureau of Standards,

Gaithersburg, Maryland, June 23-27,

1 986, p. 40.

A need to separate connector loss from

swept-f requency automatic network ana- lyzer measurements to check an attenuation calculation for a low-loss, coaxial

line has led to a simple graphical technique for determining the connector

loss. It is also possible to determine

joint losses around center conductor

bead supports on the line itself. Preliminary results indicate that losses in

the mi lli-decibel range can be determined to a precision of a few tenths of

a mi lli-decibel or better, even though

the data are obscured by considerable

connector loss and calibration error. Results were checked by independent

measurements and show excellent agreement.

[Contact: William C. Daywitt, (303)

497-3720]

Engen, G.F., In Search of a More

Realistic Accuracy Statement for Microwave Metrology, 27th ARFTG (Automatic

RF Techniques Group) Conference Digest,

Baltimore, Maryland, June 5-6, 1986,

pp. 181-183 (August 1986).

The concept of "measurement accuracy" is

fundamental to all of metrology. Given

two different techniques for measuring

the same parameter, an evaluation of

their respective accuracies typically

plays a major role in an assessment of

their relative merit.

Historically, the accuracy achieved by

the microwave metrologist has been

limited by detector performance, hardware imperfections, and connector

problems. Today, the effect of hardware

imperfections has been largely eliminated by more complete modeling. Moreover, the performance of the detection

systems has been improved to the point

where in many cases the non-ideal con- nector behavior is the major error

source. Although important refinements

in the connectors have also been

realized, it is quite possible that

these have not kept pace with the other

developments

.

In any case, it is useful to pose the

following question: Assume a measurement system which, apart from being

fitted with connectors typical of those

in general use, is otherwise perfect.

How much measurement accuracy 'can one

realistically claim for it?

[Contact: William E. Little, (303)

497-5479]

McDonald, D.G. , Novel Superconducting

Thermometer for Bolometric Applications, Applied Physics Letters, Vol.

50, No. 12, pp. 775-777 (March 23,

1 987)

.

The temperature dependence of the magnetic penetration depth in a superconductor is proposed as a basis for a sensitive thermometer. This depth is

monitored through the inductance of a microstrip transmission line, which is

incorporated into an impedance measuring

bridge. The bridge is envisioned as an

integrated circuit with all critical

components at low temperature. It is

estimated that the contribution to the

noise equivalent power by the sum of the

Josephson noise and the preamplifier

noise can be reduced to about 7 x 1O~20

watt per root hertz, which is approximately four orders of magnitude below

currently realized values. Performance

of this device as a bolometer is limited

by noise from the thermal conductance of

the bolometer mount with the present

state of the art.

[Contact: Donald G. McDonald, (303)

497-51 1 3]

Optical Fiber Metrology

Released for Publication

Danie Ison, B .L . , and Whittenberg, C.D.,
CEEE Technical Progress Bulletin - October 1987 Page 1 9

Optical Fiber Metrology (cont'd.

)

A New Method for High Resolution

Ref lectometry

We describe a new type of optical

reflectometry which is useful in testing

single-mode micro-optic lightguide systems. This technique uses a scanning

Michelson interferometer in conjunction

with a broadband illuminating source and

cross-correlation detection. High resolution is achieved through the limited

coherence of the backscattered radiation. It is possible to distinguish

scattering centers separated by only a few micrometers. In some cases loss may

be estimated for components in the

transmission path of a test lightguide.

The basic principles of this diagnostic

technique, along with some performance

characteristics, are illustrated for an all-fiber reflectome ter. We also discuss several laboratory applications

which serve to demonstrate the resolution capabilities of this measurement

concept.

[Contact: Bruce L. Danielson, (303)

497-5620]

Veeser, L. , Chandler, G. I., and Day,

G.W., Fiber Optic Sensing of Pulsed

Currents, to be published in SPIE

Advanced Institute Series on Broadband

Photonic Sensors [SPIE - The International Society for Optical Engineering,

P.O. Box 20, Bellingham, WA 98227].

This manuscript reviews work at Los

Alamos National Laboratory on the use of

optical fiber sensors for the measurement of pulsed electric currents. It is

based on a presentation at the SPIE

Advanced Study Institute Series on

Broadband Photonic Sensors held in

Howey-in-the-Hills, Florida, in April

1 986.

[Contact: Gordon W. Day, (303)

497-5294]

Recently Published

Day, G. W., Compact Fiber Sensors for

the Measurement of Low Level Electric

Currents, Proceedings of the 4th

International Conference on Optical

Fiber Sensors, Tokyo, Japan, October

7-9, 1 986, pp. 81-84.

Recent progress in the development of

fiber current sensors includes the

fabrication of 1 ow - 1 o s s , lowbirefringence, 3-cm diameter coils by

annealing, and the demonstration of a noise equivalent current of 180

microamperes per root Hertz.

[Contact: Gordon W. Day, (303)

497-5204]

Engelsrath, A., Danielson, B.L., and

Franzen, D.L., Attenuation Measurements on Deformed Optical Fibers,

NBSIR 86-3052 (July 1986).

Attenuation measurements were made on several different optical fibers subjected to bending, tension, twisting,

and overlapping. The measurements were

performed with an optical time-domain

reflectome ter which gives a partial

separation between the various contributions to the measured deformation loss.

The graded- and step-index multimodefibers had a variety of different dimensions and coatings. The results of

bending attenuation are compared with

models and other reported experimental

loss data. Based on the results of the

present experiments, an empirical model

has been derived which permits a prediction of the smallest bend radius consistent with a given allowed attenuation.

[Contact: Bruce L. Danielson, (303)

497-5620]

Franzen, D.L. , Standard Measurement

Procedures for Characterizing SingleMode Fiber, Conference Digest, Test & Measurement World Expo, San Jose,

California, April 8-10, 1986, pp.

70-77 (October 1 986)

Parameters used to describe single-mode

fiber include attenuation, cut-off wavelength, mode-field diameter, and dispersion. Some measurement results depend

on test-fiber condition and testing

me thods

[Contact: Douglas L. Franzen, (303)

497-3346 or -5342]
Page 20 CEEE Technical Progress Bulletin - October 1987

Optical Fiber Metrology (cont'd. )

Gallawa, R.L. , and Li, X., Calibration

of Optical Fiber Power Meters: The

Effect of Connectors, Applied Optics,

Vol. 26, No. 7, pp. 1 1 70-1 1 74 (April

1 987)

.

This paper addresses the question of

accurate measurement of optical power at

the wavelengths and power levels of

interest to the telecommunications com- munity. In particular, we examine the

calibration of power meters that are

destined for use in a field environment.

Connectors and adapters are shown to

skew the measurements, leading to errors

attributable to reflections from the

connector or to angular dependence of

detector response. Calibration data are

taken using two popular connector types:

a biconic and an SMA type. The data are

sufficient to illustrate the problem but

definitive conclusions cannot be drawn

regarding variability of performance

with connector or connector type,

because of the limited data.

[Contact: Robert L. Gallawa, (303)

497-3761

]

Maisonneuve, J. , and Gallawa, R.L. , The Use of Power Transfer Matrices in

Predicting System Loss: Theory and

Experiment, Fiber and Integrated

Optics, Vol. 6, No. 1, pp. 11-26

(1 985) . The phase space diagram for parabolic

and step-index fibers leads to a graphic

representation of the bound, leaky, and

refracted rays of ray theory. This

concept is used to predict the attenuation of typical components of local area

networks. The technique uses power

transfer matrices to track the evolution

of power distribution in ray packets.

In particular, we predict and then measure the power transfer of two ray

packets for a step-index fiber. The

comparison is encouraging.

[Contact: Robert L. Gallawa, (303)

497-3761

]

Electro-Optic Metrology

Released for Publication

Veeser, L. , and Day, G.W., Fiber Optic

Faraday Rotation Current Sensor, to

be published in the Proceedings of the

Fourth International Conference on Megagauss Field Generation and Related

Topics, Santa Fe, New Mexico, July

1 4-1 7, 1986.

The manuscript reviews work at Los

Alamos National Laboratory on the use of

optical fiber sensors for the measurement of pulsed electric currents.

[Contact: Gordon W. Day, (303)

497-5204]

Recently Published

Day, G.W., Hale, P.D., Deeter, M., Milner, T.E., Conrad, D. , and Etzel, S.M.,

Limits to the Precision of ElectroOptic and Magneto-Optic Sensors, NBS

Technical Note 1307 (March 1987).

[Original title: High-Precision

Electro-Optic and Magneto-Optic Sensors

for Power System Applications: Technical Feasibility]

.

The principles of electro-optic and

magneto-optic sensors suitable for use in power system applications are

reviewed with particular attention to

the properties of materials and components that limit the precision of such

sensors. Section topics include precision and accuracy in electro-optic and

magneto-optic sensors; electro-optic and

magneto-optic sensor configurations

suitable for current and voltage mea- surements; critical evaluation of

electro-optic sensor technology; critical evaluation of magneto-optic sensor

technology; and suggested approaches to

the development of high-precision optical current and voltage sensors. Data

on a number of materials are collected

and presented. For high-precision

electro-optic sensors, it is recommended

that crystals of the polar class having

point symmetry 43 m be used. For highprecision magneto-optic sensors, a lead

glass with a low stress-optic coefficient is recommended. Choices for
CEEE Technical Progress Bulletin - October 1987 Page 21

Electro-Optic Metrology (cont'd.

)

other components are also suggested.

For doth types of sensors, a precision

of roughly ±1% over a 1 00°C temperature

range should he attainable. To achieve

a precision better than that, it will be

necessary to use temperature compensation techniques, several of which are proposed and discussed.

[Contact: Gordon W. Day, (303)

497-5204]

Franzen, D.L. , Yamabayashi, Y. , and

Kanada, T. , Optical Sampling with

Gain-Switched, Pulse-Compressed Distributed-Feedback Laser Diodes, Electronics Letters, Vol. 23, No. 6, pp.

289-290 (March 1 987) . Chirped pulses from gain-switched, distributed feedback laser diodes at a wavelength of 1.3 pm are compressed to

8.7 ps full width at half maximum by the

linear dispersion properties of singlemode fiber. These pulses are used to

optically sample fast waveforms from

other 1.3-ym laser diodes. The high

time resolution sampling system uses a fibre coupler to combine beams; this

eliminates critical alignment and

results in a practical design.

[Contact: Douglas L. Franzen, (303)

497-3346 or -5342]

Young, M., and Weppner, M., Hybrid

Computer-Optical Processing With

Inexpensive Liquid Crystal

Television, Proceedings of the 1986

International Optical Computing

Conference, Jerusalem, Israel, July

6-1 1, 1986, pp. 146-1 53 [SPIE - The

International Society for Optical

Engineering, P.0. Box 20, Bellingham,

W A 98227]

We describe a computer-optical

processing system that uses an

inexpensive liquid crystal television

monitor and a selective holographic

filter for coherent pattern recognition.

Specifically, we use a digital computer

to generate an edge-enhanced image of an

object, expose a Fourier transform

hologram of this image, and use the

hologram as a sort of matched filter for

recognizing the original object in real

time.

[Contact: Matt Young, (303) 497-3223 or

-5342]

Complex Testing

Recently Published

Leedy, T.F., A View of Metrology Support for ATE Systems, The Reflector,

Vol. 35, No. 9, p. 20 (May 1, 1987).

Several approaches are used to assure

that automatic test equipment (ATE)

performs properly. The traditional

approach is the calibration and adjustment of critical instruments contained

in the automatic test system by a calibration laboratory where the performance

of the instrumentation is evaluated and

any necessary adjustments are made.

However, the normal operating environment experienced by the equipment in the

ATE system may be quite different than

that encountered in the calibration

laboratory where such effects as elevated temperature and the presence of

high-frequency interfering signals (possibly produced by other instrumentation

and computers in the ATE system) may

degrade the performance of precision

measurement equipment. Thus, the user

of an ATE system, which has had instruments removed and calibrated in a laboratory, may have greater confidence in

the equipment performance than is warranted.

Another calibration approach employed

with ATE systems is the use of various

types of built-in test or self-testing

schemes. If properly implemented, such

schemes may be valuable towards assuring

that measurements made by an ATE system

are consistent. However, such techniques alone cannot perform a calibration function to determine the difference between values of physical quantities, such as voltage and frequency,

measured by the ATE system and those

measured quantities that have traceability to national standards. For success-
Page 22 CEEE Technical Progress Bulletin - October 1987

Complex Testing (cont'd.

)

ful calibration of a test system, a combination of traditional laboratory

calibration techniques and built-in test

techniques is usually desirable.

[Contact: Thomas F. Leedy, (301)

975-241 0]

Other Fast Signal Topics

Released tor Publication

Bell, B.A., A Report on the NBS/CEEE

Survey of Electronic Measurement Needs

Below 10 MHz, to be published in the

Proceedings of the 1987 National Conference of Standards Laboratories Workshop and Symposium, Denver, Colorado,

July 1 2-1 6, 1 987.

This paper describes the results of a recent survey conducted by the Electrosystems Division of the Center for Electronics and Electrical Engineering at

the National Bureau of Standards. A

summary is provided of the data obtained

on questions concerning critical electrical quantities and associated instrumentation and devices, automatic test

equipment/complex measurement systems,

and conducted electromagnetic interf erence.

[Contact: Barry A. Bell, (301)

975-2402]

Lehman, J. , Warming Up to Cold: A

Curriculum Boost Using Cryogenics.

Sometimes, a well-rounded curriculum for

the physical sciences is burdened with

bringing into the classroom topics that

do not necessarily correspond to our daily observations and intuition. Heat,

energy, resistance, kinetics, and countless other topics challenge not only the

student's imagination, but also an

instructor's ability to present such

topics in realistic and interesting

ways. Cryogenics, known informally as the science of cold, offers many avenues

for learning beyond the obvious effects

of cold temperature. This paper

includes some justification, pedagogy,

and motivation for use of cryogenics in

science curricula.

[Contact: John Lehman, (303) 497-3654]

Mattis, R.L., A Day in the Life of a VAX System Manager, t<? be published

in The DEC Professional.

A day in the life of a VAX system

manager is presented in the form of a diary showing what an eight-hour day

really looks like.

[Contact: Richard L. Mattis, (301)

975-2235]

Oates, C.W., and Young, M. , Microscope

Objectives, Cover Slips, and Spherical

Aberration

.

Microscope objectives with powers of 20X

and higher will display significant

spherical aberration when used to

examine an optical fiber without a cover

slip.

[Contact: Matt Young, (303) 497-3223 or

-5342]

Recently Published

Sorrells, J.R., A Survey of Electronic

Measurement Needs Below 10 MHz, NBSIR

87-3549 (June 1987).

The results of a survey to assess the

electronic measurement needs from dc to

1 0 MHz are presented. The questionnaire

used in the survey covered three broad

areas of measurement need: 1 ) basic

electrical quantities and related precision instruments, 2) automatic test

equipment and other complex measurement

systems, and 3) conducted electromagnetic interference. The data provided

by 527 respondents are summarized, and

the results of various analyses are

described. Several conclusions, suggested by the analyses, are also discussed.

[Contact: Barry A. Bell, (301)

975-2402]

Weppner, M., and Young, M., Image

Processing for Optical Engineering

Applications, NBSIR 87-3065 (April
CEEE Technical Progress Bulletin - October 1987 Page 23

Other Fast Signal Topics (cont'd.

)

1 987)

This report describes the development

and testing of image processing software

designed for optical engineering applications. Image processing functions in

this software include two-dimensional

Fourier transforms, convolution, noise

reduction, multiple image resolutions,

and low-level image processing functions. The software also contains image

information display tools including

Gaussian beam and g-profile characterization for optical fiber measurements.

The necessary image file input/output

routines are presented in the software

and are used to read and store images in

conjunction with other image processing

software, digitizing cameras, and output

display devices.

[Contact: Matthew Weppner, (3 03)

497-3223]

ELECTRICAL SYSTEMS

Power Systems Metrology

Released for Publication

Fenimore, C., and Hebner, R.E., The

Thermally Induced Growth of Bubbles:

An Arc in a Liquid.

The effects of an electrical arc on a liquid in which it burns are modeled as an expanding bubble. The arc is treated

as a heat source with a specified sur- face temperature, radius, and duration.

The mass and pressure in the bubble grow

as the flow of heat to the bubble sur- face vaporizes the liquid. The bubble

does work as it expands against the

external pressure field in the liquid.

The model is a system of ordinary differential equations which are solved for

the bubble radius as a function of time

and for the maximum bubble size as a function of the ambient pressure in the

liquid. These computations are compared

with the corresponding measured quantities in an experiment in which an arc is

ignited in water at ambient pressures

ranging between 0.1 and 15 MPa.

[Contact: Charles Fenimore, (301)

975-2428]

Hebner, R.E., Kelley, E.F., FitzPatrick,

G. J. , and Forster, E.O., The Effect

of Pressure on Streamer Inception and

Propagation in Liquid Hydrocarbons.

This paper shows that for pressures

between 0.1 and 5.0 MPa, the structure

of a streamer originating from a cathode

is significantly modified while that

initiating from an anode is relatively

unchanged, in toluene and hexane. For

cathode streamers, the inception voltage

increased from 40 ± 6 kV at 0.1 MPa to

99 ± 22 kV at 5.0 MPa. For anode

streamers, the inception voltage

increased from 53 ± 6 kV at 0.1 MPa to

123 ± 5 5 kV at 5.0 MPa.

[Contact: Robert E. Hebner, (301)

975-2403]

Lagnese, J. , and McKnight, R.H., Estimates of Confidence Intervals for

Divider Distorted Waveforms, to be

published in the Proceedings of the 5th

International High Voltage Symposium,

Braunschweig, West Germany, August

20-21, 1 987.

This paper describes a method for com- puting confidence intervals for a high

voltage impulse distorted by a divider

system. The technique is based on a recent algorithm designed to calculate

confidence intervals for solutions to

ill-posed problems subject to inequality

constraints. Applications of the method

to measurements made with a resistive

divider illustrate its value for obtaining useful stochastic error bounds for

high-voltage impulse restoration.

[Contact:

975-2431

]

Ronald H. McKnight, (301)

Mi sakian, M., Appendix A. Exposure

Systems and Measurements

,

National

Council on Radiation Protection and

Measurements (NCRP) Report on ELF Field

Ef f ects

This appendix describes apparatus that
Page 24 CEEE Technical Progress Bulletin - October 1987

Power Systems Metrology (cont'd.

)

can be used to generate electric and

magnetic fields in the laboratory for

bioeffects studies. A number of electrical parameters which are useful for

characterizing the fields are identified

and methods for their measurement are

described. Emphasis is given to

describing exposure systems which simulate the electric and magnetic fields in

the vicinity of ac power lines and which

are suitable for small animal studies.

The measurement techniques may be used

to determine higher frequency ac fields

provided that the criterion for quasistatic fields that f <<c//2ttL is

satisfied. Here f is the frequency, c is the velocity of light, and L is a significant dimension of the structure

being considered. The generation and

measurement of power- frequency electric

fields in conductive media, for in vitro

studies, and the radiofrequency electromagnetic fields which are sinusoidally

amplitude-modulated at extremely low

frequencies are discussed briefly.

Methods for generating and measuring

pulsed magnetic fields are also considered briefly. References which give

more complete accounts of these subjects

are provided.

[Contact: Martin Misakian, (301)

9 75-2426]

Sieck, L.W., and Van Brunt, R.J. , Rate

Constants for F“ Transfer from SF,. to

_ b Fluonnated Gases and SO^. Temperature

Dependence and Implications for Electric Discharge in SF

&

. The reactivity of SF

6 ” towards SC> 2

, SOF , SO F , SOF , SF , and SiF has

A 2 5 4 4 4 been investigated using the technique of

pulsed-e lectron-beam, high-pressure mass

spectrometry. With the exception of the

SF

& “ + SiF

^ reaction, all of the pairs

exhibited a negative temperature coefficient in that the rate constants for

F“ transfer decreased substantially with

increasing temperature. The reaction

SF ~ + SiF. SiF “ + SF C was found to

proceed with a rate constant of 5.6 ± 0.8 x 10~ 10 cm 3 /mol-s throughout the

temperature range studied (298 to 510

K) , which corresponds to a collision efficiency of unity. The other reactions

were found to approach unit collision

efficiency only at reduced temperatures

(<300 K)

.

[Contact: Richard J. Van Brunt, (301)

975-2425]

Van Brunt, R.J. , Aschwanden, T. , and

Bieber, M.E., Analysis of Dielectric

Strength Data for Binary Electronegative Gas Mixtures, to be published in

the Proceedings of the 1 8th International Conference on Phenomena in

Ionized Gases, University of Wales,

United Kingdom, July 1 2-16, 1 987.

The consistency among dielectric

strength, electron swarm, and collision

cross-section data for ionization,

attachment, and momentum transfer has

been determined for the binary gas mixtures SF^/He, SFg/Ne, SF^/Ar, and

SF /CO using a theoretical approach

u 2- recently developed by Van Brunt.

Dielectric strength data for SF /Ar and

SF^/C0

2 measured by Aschwanden can be

accurately described by the model calculation and exhibit a high degree of

consistency with swarm and cross-section

data. The model also appears to successfully describe preliminary electrical breakdown data for SF /Ne mixtures.

The theoretical model fails for SF^/He

because it does not allow for the

important effect of Penning ionization

which is possible in this case.

[Contact: Richard J. Van Brunt, (301)

975-2425]

Van Brunt, R.J. , Herron, J. T. , and

Fenimore, C., Corona-Induced Decomposition of Dielectric Gases, to be

published in the Proceedings of the

Fifth International Symposium on Gaseous Dielectrics, Knoxville, Tennessee,

May 3-7, 1 987.

A three-zone model for chemical decomposition of electronegative gases in negative point-plane corona discharges is

proposed which considers the discharge

glow, ion-drift, and main gas volumes,
CEEE Technical Progress Bulletin - October 1987 Page 2 5 Power Systems Metrology (cont'd.

)

respectively, as separate regions of

diminishing chemical activity and

increasing relative size. The proposed

model is shown to be useful in predicting discharge by-product yields and the

dependences of these yields on discharge

current and gas mixture composition. As

an example, the model is applied here to

the decomposition of pressurized SF

D containing trace levels of water vapor

and is shown to yield results for oxyfluoride production that are in satisfactory agreement with observations.

[Contact: Richard J. Van Brunt, (301)

975-2425]

Van Brunt, R.J. , and Si ddagangappa,

M.C., Identification of Corona

Discharge-Induced SF^ Oxidation

Mechanisms Using SF

6 - 18-O

2

-H

2 180 and

SF

6 - 160

2 -H2 180 Gas Mixtures.

The absolute yields of gaseous oxyfluorides S0F

2

, SC>

2 F2

, SOF^ from negative,

point-plane corona discharges in pressurized gas mixtures of SF^ with 0

2 and

H

2 0 enriched with 18C> 2 and H

2 180 have

been measured using a gas chromatographmass spectrometer. The predominant SF^

oxidation mechanisms have been revealed

from a determination of the relative 1

8

0

and 1

6

0 isotope content of the observed

oxyfluoride by-products. The results

are consistent with previously proposed

production mechanisms and indicate that

S0F

2 and SC> 2 F2 derive oxygen predominantly from H

2 0 and O , respectively, in

slow, gas-phase reactions involving SF^,

SF^ , and SF

2 that occur outside of the

discharge region. The species SOF^

derives oxygen from both H

2 0 and C> 2 through fast reactions in the active

discharge region involving free radicals

or ions such as OH and 0, with SF^ and

s[Contact:

v

Richard J. Van Brunt, (301)

975-2425]

Van Brunt, R.J., and Sieck, L.W.,

Transfer of F

- in Collisions of SF “

D with Fluorinated Gases and S0

2 at

Thermal Energies, to be published in

the Proceedings of the Fifteenth International Conference on the Physics of

Electronic and Atomic Collisions,

Brighton, United Kingdom, July 22-28,

1 987.

Measured temperature dependences of F~

transfer rates for collisions of SF^ - with S0F

2

, S0

2 F2

, SOF^, SO , SF^, and

SiF^ are reported. The results are used

to interpret the complex anionic chemistry that occurs during electrical discharges in S F^

[Contact: Richard J. Van Brunt, (301)

975-2425]

Van Brunt, R.J. , Sieck, L. W., Sauers,

I., and Si ddagangappa, M.C., Transfer

of F” in SF ~ + SOF, Collisions and Its

6 4 Influence on SOF^ Yield from Corona

Discharges in Gases Containing SF

&

.

The temperature (T) and electric fieldto-gas pressure (E/P) dependences of the

rate constant k for the reaction SF^. - + SOF^ + SOF - + SF,- have been measured.

For T < 270 K, k approaches a constant

of 2.1 x 1

0

-9 cm 3 /s, and for 433 K > T > 270 K, k decreases with T according to

k(cm3 /s) = 0.124 exp (-3.3 £n T(k)).

For E/P < 60 V/cm»torr, k has a constant

value of about 2.5 x 10“ 10 cm 3 /s, and

for 130 V/cm»torr, the rate is approximately given by k(cm 3 /s) ~ 7.0 x 10 -1 ° exp(-0.022 E/P). This reaction is shown

to be important in controlling the yield

of SOF^ from corona discharges in gas

mixtures containing SF^ and at least

trace amounts of 0 and H

2 0. The

observed behavior of SOF^ production

rates for negative, point-plane corona

discharges is analyzed using k in a chemical kinetics model of the ion-drift

region in the discharge gap, and it is

shown that competing reactions not

involving SOF^ are effective in deactivating SF

& “. [Contact: Richard J. Van Brunt, (301)

975-2425]
Page 26 CEEE Technical Progress Bulletin - October 1987

Power Systems Metrology (cont'd.

)

Recently Published

Laug, O.B., A Precision Power Amplifier for Power/Energy Calibration

Applications, Proceedings of the

IEEE Instrumentation and Measurement

Technology Conference, IMTC/87, Boston,

Massachusetts, April 27-29, 1987, pp.

1 29-1 34.

A precision power amplifier for use in

power/energy calibration applications is

described. The amplifier was primarily

designed to boost the output amplitude

of a dual-channel digital generator to

provide the nominal 1 20 or 240 rms voltage component of a "phantom" calibration

power source. The amplifier has a fixed

gain of 40 and can provide a maximum

output voltage swing of 970 Volts peakto-peak or 340 V rms at 100 mA rms. The

bandwidth is from dc to 150 kHz, and at

60 Hz the observed no-load, short-term

amplitude and phase instabilities are ±5

ppm and ±5 microradians, respectively.

The amplifier design uses high-voltage

N-channel MOSFETs in the output driver

stage together with a unique circuit

topology of opto-isolators between the

low-level input stage and the high-level

output stage.

[Contact: Owen B. Laug, (301)

975-241 2]

Misakian, M., McKnight, R.H., and Fenimore, C., Calibration of AspiratorType Ion Counters and Measurement of

Unipolar Charge Densities, Journal of

Applied Physics, Vol. 61, No. 4, pp.

1 276-1 287 (February 1 5, 1 987). [A more

extended treatment of this topic is

given in NBS Technical Note 1223 (May

1 986) .

]

The characterization of a parallel plate

apparatus which can produce a unipolar

charge density that is suitable for

calibrating aspirator-type ion counters

operating in the ground plane is described. Influences of a dc electric

field, air motion. Coulomb repulsion,

and diffusion on the transport of ions

into the ion counter are examined to

determine their effects on instrument

calibration and measurements in the

vicinity of high-voltage dc transmission

lines. A charge density which is known

with an uncertainty of less than ±9% is

used to check the performance of an ion

counter with and without a duct at its

entrance.

[Contact: Martin Misakian, (301)

975-2426]

Van Brunt, R.J. , Common Parameterizations of Electron Transport, Collision

Cross Section, and Dielectric Strength

Data for Binary Gas Mixtures, Journal

of Applied Physics, Vol. 61, No. 5, pp.

1773-1787 (March 1, 1987).

Previously used parame teriza tions of

dielectric strengths (electrical breakdown data) for gas mixtures in terms of

electron collision and transport parameters are reviewed. A new method of

fitting experimental data on dielectric

strengths for binary electronegative gas

mixtures is proposed based upon the

principal assumption that the electron

kinetic energy distributions in the gas

are Maxwellian. The method provides

physical insight into such behavior as pressure-dependent or pressure-independent synergisms, and is useful in checking the consistency between dielectric

strength data and available information

on electron transport and ionization,

attachment, and momentum transfer collision cross sections. The method is

applied here to the mixtures SF^/N^

CC£

2 F2 /N

2

, and SF /CC£ F

2

. [Contact: Richard J. Van Brunt, (301)

975-2425]

Pulse Power Metrology

Released for Publication

Lagnese, J. , and McKnight, R.H., Calculation of Confidence Intervals for

High Voltage Impulse Reconstruction.

A recently described algorithm designed

to calculate confidence intervals for

solutions to ill-posed problems subject
CEEE Technical Progress Bulletin - October 1987 Page 27

Pulse Power Metrology (cont'd.

)

to inequality constraints is applied to

the calculation of confidence intervals

for a hign-voltage impulse distorted by

a divider system. Applications of the

method to measurements made with resistive and capacitive dividers illustrate

its value for obtaining useful stochastic error bounds for high-voltage

impulse restoration.

[.Contact: Ronald H. McKnight, (301)

975-2431]

McKnight, R.H. , Measuring Fast-Rise

Impulses by Use of E-Dot Sensors, to

be published in the Proceedings of the

5th International High Voltage Symposium, Braunschweig, West Germany, August

20-21, 1987.

Field coupled sensors such as capacitive

dividers, derivative (E-dot or B-dot)

sensors and Rogowski coils, are commonly

used in pulse power applications. Measurement devices using E-dot sensors in

combination with passive or active integrators provide broadband capability,

but with limited sensitivity. The use

of this category of sensor in measurements of fast rise pulses, such as electromagnetic pulse, in power system

equipment offers some advantages, such

as ease of construction and versatility

in installation.

[Contact: Ronald H. McKnight, (301)

970-2431

]

Buperconductors

Released for Publication

Ekin, J.W., Effect of Transverse Compressive Stress on the Critical Current

and Upper Critical Field of NbgSn.

A large reversible degradation of the

critical current of multifilamentary

Nb^Sn superconductors has been observed

under the application of uniaxial com- pressive stress at 4 K applied transverse to the conductor axis. In bronzeprocess multifilamentary Nb^Sn, the

onset of significant degradation occurs

at about 50 MPa. In an applied field of

1 0 T, the magnitude of the effect is

about seven times larger for transverse

stress than for stress applied along the

conductor axis. The transverse stress

effect increases with magnetic field and

is shown to have its origin in a reversible degradation of the upper criticalfield. The intrinsic effect of trans -^- verse stress on the upper critical field

is about ten times greater than for

axial stress. It is shown that the

transverse stress from the Lorentz force

on the conductor is proportional to

conductor thickness, and thus the effect

will need to be considered in the internal stress design of large magnets. The

effect may be particularly significant

in cabled conductors where large transverse stress concentrations can occur at

strand crossover points.

[Contact: John W. Ekin, (303)

497-5448]

Ekin, J. W . , Transport Critical Currents in Bulk Sintered Y

^ Ba

2

Cu

3 0x and

Possibilities for Its Enhancement.

Several general processing methods for

increasing the critical current density,

Jc , in a bulk sintered Y^Ba^u^j^

superconductor are outlined. Data are

presented which indicate that the transport Jc in bulk polycrystalline specimens is dominated by a weak-link region

between high-Jc grains and that potentially much higher Jc is possible.

Two possible causes of the weak-link

phenomenon are considered: non-highTc phases or impurities localized in

the grain boundary region and anisotropy

of the superconducting properties.

Several methods for minimizing the weaklink effects to increase the Jc are

discussed.

[Contact: John W . Ekin, (303)

497-5448]

Ekin, J.W., Transverse Stress Effect

on Multifilamentary Nb

3

Sn Superconductor, to be published in Advances in

Cryogenic Engineering, Volume 34,

1 988.
Page 28 CEEE Technical Progress Bulletin - October 1 98

7

Superconduc tors (cont'd.

)

A' large reversible degradation of the

critical current of multifilamentary

NbgSn superconductors has been observed

under the application of uniaxial com- pressive stress at 4 K applied transverse to the conductor axis. In bronzeprocess multi filamentary NbgSn, the

onset of significant degradation occurs

at about 50 MPa. The intrinsic effect

of transverse stress on the upper critical field is about ten times greater

than for axial stress. Although transverse stress on the lsib^Sn filaments is

less than axial stress, it will need to

be considered in the internal stress

design of large magnets. The effect

scales with conductor thickness and

consequently will place limits on con- ductor dimensions and the spacing

between distributed reinforcement in

large magnets.

[Contact: John W. Ekin, (3 03)

497-5448]

Ekin, J.W., Panson, A.J. , Braginski,

A. I., Janocko, M.A., Hong, M., Kwo, J.

,

Liou, S.H., Capone, D.W., and Flandermeyer, B., Transport Critical-Current

Characteristics of Y

1 Ba2 Cu

3 Ox , to

be published in the Proceedings of the

Materials Research Society Symposium on

High Temperature Superconductors, Anaheim, California, April 23-24, 1987.

Voltage vs. current (V-I ) characteristics were measured at magnetic fields up

to 24 T at temperature of 77 K in sev- eral Y Ba Cu 0Y samples fabricated at

different laboratories. Critical temperatures, Tc

, measured by resistivity

were about 93 K. All samples showed

linear V-I characteristics at current

levels much greater than the critical

current, Ic

. However, the slope was significantly less than the normal

resistance at Tc

. The slope increased

with magnetic field and reached the

normal resistance value only at fields

greater than 24 T. Values of the transport critical-current density J

c near

zero magnetic field were generally low

and variable (about 1 to 200 A/cm2 ).

The transport J

Q fell sharply when

magnetic field was applied, decreasinq

by about an order of magnitude between

1 0

“ 2 >p an(3 i >p # This leads to an effective upper critical field for transport

critical currents in Y Ba

2Cu.Ox that

is significantly less tnan the upper

critical field defined by the field at

which the resistance increases to the

normal- state value. The transport Jc appears to be significantly less than

J

c calculated from magnetization data

on similar samples. These results are consistent with the transport criticalcurrent in the Y^Ba^Cu 0

X system being

dominated by a "weaK-link" region

between high-J c grains.

[Contact: John W. Ekin, (303)

497-5448]

Goldfarb, R.B., Clark, A.F., Panson,

A.J., and Braginski, A.I., AC Susceptibility Measurements Near the Critical

Temperature of a Y-Ba-Cu-0 Superconductor, to be published in the Proceedings of the Materials Research Society

Meeting, Anaheim, California, April

23-24, 1987.

The loss component of complex susceptibility of a Y-Ba-Cu-0 superconductor

near its critical temperature is strongly dependent on ac field amplitude but

virtually independent of frequency.

This implies that magnetic hysteresis is

the major loss mechanism in these materials. The temperature at which the

loss first becomes positive upon warming

corresponds to an equivalence between

the amplitude of the ac field and the

lower critical field of the superconductor.

[Contact: Ronald B. Goldfarb, (303)

497-3650]

Goldfarb, R.B., Clark, A.F., Panson,

A.J. , and Braginski, A.I., Evidence

for Two Superconducting Components in

Oxy ge n - An n e a 1 ed Single-Phase

Y-Ba-Cu-O

.

The complex susceptibility of a sintered

Y-Ba-Cu-0 superconductor is strongly

dependent on ac field amplitude, h.
CEEE Technical Progress Bulletin - October 1987 Page 29

Superconduc tors (cont'd.

)

Very small values of h must be used in

order that the real coirponent of susceptibility, X' , reach a value corresponding to bulk diamagnetism just belcw the

critical temperature, Tc

. The imaginary component of susceptibility, X",

represents hysteresis loss in the sam- ple. Thus, X" versus temperature

becomes positive when h exceeds the

lower critical field, h

c ^, of the

s uperconduc tor.

Annealing the material in oxygen gives

rise to two distinct components, a 'good' superconductor and a 'bad' superconductor, with different critical temperatures and lower critical fields.

Curves of susceptibility versus temperature reflect the dual nature of the

annealed sample: X' has an inflection

at the Tc of the bad component and

approaches zero at the T

c of the good

component, while X" has a peak at each

T c

. Both critical temperatures

decrease linearly with increasing h,

though at very different rates. Hc ^ of the good component is vastly greater

than of the bad component. The

lower critical fields decrease linearly

with increasing temperature.

Two possible models explain the susceptibility data. In one, the good component consists of superconducting grains

and the bad component is intergranular

Josephson material. In the second

model, the good component is at the

interior of the sample and the bad com- ponent is a surface region. This condition could arise if there was oxygen

depletion at the surface subsequent to

overall enrichment during annealing.

[Contact: Ronald B. Goldfarb, (303)

497-3650]

Goodrich, L.F., Bray, S.L., and Clark,

A.F., Current Ripple Effect on Superconductive DC Critical Current Measurements, to be published in Advances in

Cryogenic Engineering - Materials,

Volume 34, 1 988.

The effect of sample current power supply ripple on the measurement of dc

critical current is reported. Measurements were made on multifilamentary NbTi

superconductors. Ripple in a current

supply becomes more significant above

500 A because effective filtering

becomes more difficult. The presence of

current ripple reduces the measured dc

critical current. Ripple can also

directly affect the voltmeter used for

the measurements, because it has to

operate with a noisy input. The quantitative effect of current ripple was studied using a battery current supply

instrumented to allow the creation of

ripple current with variable frequency

and amplitude. Problems common to all

large conductor critical current mea- surements are discussed.

[Contact: Loren F. Goodrich, (303)

497-3143]

Moreland, J. , Ekin, J.W., Goodrich,

L.F., Capobianco, T.E., and Clark,

A.F., Electron Tunneling Measurements

in LaSrCuO and YBaCuO, to be published in the Proceedings of the Materials Research Society Meeting, Anaheim, California., April 23-24, 1 987.

The break junction technique whereby

vacuum tunneling occurs within the fracture of a bulk sample is used to study

the LaSrCuO and YBaCuO perovskite superconductors. Structure in the currentvers us-voltage characteristics is reminiscent of previous quasiparticle curves

obtained for BCS superconducting materials. Some curves have anomalous qualities, including large dips in the junction conductance with increasing voltage

just above a well-defined tunneling gap

edge, linearly increasing junction con- ductance with applied bias, along with

features occurring near voltage intervals following a 1, 3, 5 pattern.

[Contact: John Moreland, (3 03)

497-3641

]

Moreland, J. , Goodrich, L.F., Ekin,

J. W., Capobianco, T.E., and Clark,

A.F., Electron Tunneling Measurements
Page 30 CEEE Technical Progress Bulletin - October 1987

Superconductors (conn'd.).

of High Tc Compounds Using Break

Junctions, to be published in the

Proceedings of the 18th International

Conference on Low Temperature Physics,

Kyoto, Japan, August 1 0-1 6, 1987.

We report on the break junction technique and its application to the high

Tc superconductors LaSrCuO and YBaCuO.

In this technique, bulk samples are

fractured and the freshly fractured

surfaces adjusted to form a tunneling

junction with vacuum or liquid helium as the insulating barrier. Precise mechanical adjustment permits the study of

electron tunneling phenomena between

pieces of a bulk superconductor. The

current-voltage characteristics of these

break junctions are variable, indicating

sample inhomogenei ty . However, some junction settings result in the more

familiar quasi-particle signatures in

the current-voltage characteristics.

Low-leakage junctions indicate the

presence of a sharp superconductive

energy gap as well as large variations

in junction conductance above the gap

edge in both materials.

[Contact: John Moreland, (303)

497-3641

]

Moreland, J. , Goodrich, L.F., Ekin,

J.W., Capobianco, T.E., and Clark,

A.F., Josephson Effect Above 77 K in

a YBaCuO Break Junction.

We have observed the Josephson effect in

a YBaCuO break junction. Critical currents as high as 10 mA were measured at

4 K for break junctions with a point

contact within the fracture of a sample.

The junction was susceptible to microwave radiation showing Shapiro steps

with the ratio of V/f of 2.04 ± 0.05

pV/Ghz compared to the pair tunneling

value of h/2e = 2.068 yV/GHz . These

steps were clearly visible in the

c ur rent-voltage characteristics at

temperatures up to 85 K.

[Contact: John Moreland, (303)

497-3641

]

Recently Published

Goodrich, L.F., Bray, S.L., Dube, W.P.,

Pittman, E.S., and Clark, A.F.,

Development of Standards for Superconductors, Interim Report, January - December 1985, NBSIR 87-3066 (April

1 987) .

A cooperative program with the Department of Energy, the National Bureau of

Standards, and private industry is in

progress to develop standard measurement

practices for use in large-scale applications of superconductivity. The goal

is the adoption of voluntary standards

for the critical parameters and other

characterizations of practical superconductors. Progress for the period January through December 1985 is reported.

The major effort was the measurement of

large conductor critical current. Other

work reported here includes stability

and a discussion of possible future

Standard Reference Materials.

[Contact: Loren F. Goodrich, (303)

497-31 43]

Magnetic Materials and Measurements

Recently Published

Goldfarb, R.B., and Bussey, H.E.,

Method for Measuring Complex Permeability at Radio Frequencies, Review

of Scientific Instruments, Vol. 58, No.

4, pp. 624-627 (April 1987).

An established method for measuring

complex rf magnetic permeability is

based on the change in inductance and

resistance of a coaxial transmission

line upon insertion of a sample toroid.

It is not necessary to wind coils on the

toroid or to correct for geometric demagnetization factors. The use of

modern commercial impedance analyzers,

as described in this paper, makes measurements from 1 kHz to 1 GHz particularly easy, fast, and accurate.

[Contact: Ronald B. Goldfarb, (303)

497-3650]
CEEE Technical Progress Bulletin - October 1987 Page 31

Magnetic Materials/ etc, (cont'd.

)

Moulder, J. C . , and Capobianco, T.E.,

Detection and Sizing of Surface Flaws

With a SQUID-Based Eddy Current Probe,

Journal of Research of the National

Bureau of Standards, Vol. 92, No. 1,

pp. 27-33 ( January-February 1987).

In a new approach to eddy current detection and sizing of surface-breaking

flaws, we have coupled a conventional

reflection probe to a superconducting

quantum interference device (SQUID) to

produce an eddy current probe with

increased sensitivity and signal-tonoise ratio. The reflection probe con- sists of an air-core excitation coil

surrounding two counterwound ferritecore pickup coils connected in series.

A room- temperature probe is inductively

coupled to a SQUID, which operates in a liquid helium bath. The new probe was used to obtain flaw signals from a num- ber of electrical-discharge machined

(EDM) slots in aluminum alloy 6061.

Results indicated that by scanning the

probe along the length of the flaw, the

length could be determined from the

extent of the flaw signal. The peak

amplitude of the flaw signal was found

to be proportional to the cross-sectional area of the flaw. Empirical calibration curves relating these quantities

were used to invert successfully the

experimental data obtained for the EDM

s lots.

[Contact: Thomas E. Capobianco, (303)

497-31 41

]

ELECTROMAGNETIC INTERFERENCE

Radiated Electromagnetic Interference

Released for Publication

Adams, J.W., and Friday, D.S., Measurement Procedures for Electromagnetic

Compatibility Assessment of Electroexplosive Devices.

Electroexplosive devices ( EEDs ) are electrically-fired explosive initiators

used in a wide variety of applications.

The nature of most of these applications

requires that the devices function with

near certainty when required and otherwise remain inactive. Recent concern

with pulsed electromagnetic interference

and the nuclear electromagnetic pulse

made apparent the lack of methodology

for assessing EED vulnerability. A new and rigorous approach for characterizing

EED firing levels is developed in the

context of statistical linear models and

is demonstrated in this paper. We com- bine statistical theory and methodology

with thermodynamic modeling to determine

the probability that an EED of a particular type fires when excited by a pulse

of a given width and amplitude. The

results can be applied to any type of

EED for which the hot-wire explosive

binder does not melt below the firing

temperature of the primary explosive.

Included are methods for assessing model

validity and for obtaining probability

plots, called "Firing Likelihood Plots."

These statistical methods are both more

general and more efficient than previous

methods for EED assessment. The results

provide information which is crucial for

evaluating the effects of currents

induced by impulsive electromagnetic

fields of short duration relative to the

thermal time constant of an EED.

Methods of measuring the thermal time

constant of an EED and the energy needed

to fire an EED with a single current

impulse are given. These parameters are

necessary not only to determine suitable

ranges in the design of the statistical

experiment, but also in assessing the

effect of pulses on EEDs in electromagnetic compatibility analyses.

[Contact: John W. Adams, (303)

497-3328]

Crawford, M.L., A TEM Driven Reverberating Chamber: A Single Facility for

Radiated EMS/V Testing, 10 kHz - 18

GHz?

This paper discusses the design, operation, and evaluation of a transverse

electromagnetic (TEM) transmission linedriven reverberating chamber for use in

establishing radiated electromagnetic
Page 32 CEEE Technical Progress Bulletin - October 1987

Radiated EMI (cont'd.

)

fields for susceptibility/ vulnerability

testing of electronic equipment. The

potential range of application is from

ID kHz to 18 GHz. Included are brief

descriptions of the facility, the operation procedures, how the test field

amplitude is determined inside the chamber, and the evaluation of the chamber's

electrical parameters such as VSWR, and

e lectrical-f ield (E-field) strength as a function of input power. Also presented

are the E-field spatial uniformity and a summary of measurement uncertainties and

conclusions derived from the test

results.

[Contact: Myron L. Crawford, (303)

497-5497]

FitzGerrell, R.G., Monopole Impedance

and Gain Measurements on Finite Ground

Planes.

The purpose of the work described here

is to determine if it is possible to

make "acceptably accurate" input

impedance and gain measurements of monopoles on a reduced ground plane. Ideally, monopoles are located on an infinite, perfectly conducting, ground plane.

Practically, measurements are made on a test site with dimensions largely determined by the cost and availability of

the space occupied by the site. Measured and calculated data shew that the

diameter of a highly conducting ground

plane snould be at least 4 A, where A = wavelength, for measuring the input

impedence of 0.25-A monopoles. At 25

MHz, the lowest frequency considered

here, such a ground plane would require

a space at least 48 m in diameter.

Model impedance measurements and calculations presented here imply that a space only 10 rn by 11 m is required by

using 1b resistively loaded wire radials

to extend a 3.66-m by 4.88-m rectangular

aluminum ground plane. Measured insertion loss data acquired using a 1:5

scale model ground plane with resistively-loaded radials indicate that it is

sufficiently large for gain measurements

as well. Measured and calculated monopole SWR and insertion loss of a fullscale ground plane verify the results of

the model measurements.

[Contact: Mark T. Ma, (303) 497-3800]

Hill, D.A., A Circular Array for

Plane-Wave Synthesis.

We analyze a circular array of electric

line sources for generating a uniform

plane wave in the interior region of the

array. Identical results for the synthesized element weightings are obtained

using matrix inversion or a Fourier

series technique. A physical optics

approximation for the element weightings

is also presented, but it yields a much

poorer result for the synthesized field.

The angle of arrival of the plane wave

can be scanned by recalculating the

element weightings, and the quality of

the field is maintained. Frequency

scanning is also possible, but the num- ber of array elements limits the maximum

frequency

.

[Contact: David A. Hill, (303)

497-3472]

Hill, D.A., Effect of a Thin Conducting Sheet on the Fields of a Buried

Magnetic Dipole.

The effect of a thin conducting sheet on

the fields of a subsurface vertical

magnetic dipole has been analyzed. The

integral representation of the fields

has been evaluated numerically, and

numerical results for the vertical magnetic field above the source at the

surface are presented in parametric

form. It is found that the predicted

fields give better agreement with previous transmission measurements than do

the fields of a homogeneous half -space

model.

[Contact: David A. Hill, (303)

497-3472]

Hill, D.A., Electromagnetic Scattering

by Buried Objects of Low Contrast.

The Born approximation is used to derive

the plane-wave scattering matrix for

objects of low dielectric contrast. For
CEEE Technical Progress Bulletin - October 1987 Page 33

Radiated EMI (cont'd.

)

general shapes, a numerical integration

over the volume of the scatterer is

required, but analytical expressions are

derived for a sphere, a circular cylinder, and a rectangular box (parallelepiped) . Plane-wave, scattering-matrix

theory is used to account for the airearth interface. Numerical results are

presented for the scattered near field

and tar field for plane-wave excitation.

The scattered fields are weak for lowcontrast objects, but the near-field

results have application to electromagnetic detection of buried objects.

[Contact: David A. Hill, (303)

497-3472]

Misakian, M. , Appendix A, Exposure

Systems and Measurements, National

Council on Radiation Protection and

Measurements (NCRP) Report on ELF Field

Ef tects.

This appendix describes apparatus that

can be used to generate electric and

magnetic fields in the laboratory for

bioetfects studies. A number of electrical parameters which are useful for

characterizing the fields are identified

and methods for their measurement are described. Emphasis is given to

describing exposure systems which simulate the electric and magnetic fields in

the vicinity of ac power lines and which

are suitable for small animal studies.

The measurement techniques may be used

to determine higher frequency ac fields

provided that the criterion for quasistatic fields that f <<c//2ttL, is

satisfied. Here f is the frequency, c is the velocity of light and L is a significant dimension of the structure

being considered. The generation and

measurement of power- frequency electric

fields in conductive media, for in vitro

studies, and the radiofrequency electromagnetic fields which are sinusoidally

amplitude-modulated at extremely low

frequencies are discussed briefly.

Methods for generating and measuring

pulsed magnetic fields are also considered briefly. References which give

more complete accounts of these subjects

are provided.

[Contact: Martin Misakian, (301)

975-2426]

Vanzura, E. , and Adams, J.W., Generating Constant Electromagnetic Fields

Inside a Partially-Loaded Shielded

Room.

This paper describes a computer-controlled feedback system that can maintain field strength levels within moderate bounds inside a partially-loaded

shielded room. These levels are relatively uniform over a large enough

volume to allow radiated immunity testing of moderate-sized objects. The

frequency range depends on the characteristics of the transmit antenna; we used 50 to 200 MHz, which is otherwise a difficult range to cover because of

limitations of other electromagnetic

compatibility susceptibility test facilities. The measurement system consists

of a computer, signal generator, amplifier, biconical antenna, and an isotropic probe system.

[Contact: John W. Adams, (303)

497-3461]

Wilson, P.F., Relationships for Comparing Coaxial-Dipole Near-Field and

Loaded-Aperture Material ShieldingEffectiveness Measurements.

Shielding-effectiveness relationships

are developed which allow covered aperture measurements (such as made in a dual TEM cell) to be compared to nearfield, coaxial-dipole results. Low

frequency approximations and the assumption that the shielding material is

highly conductive lead to simple expressions in both cases.

[Contact: Perry F. Wilson, (303)

497-3842]

Recently Published

Crawford, M.L., and Koepke, G.H. , Preliminary Evaluation of Reverberation

Chamber Method for Pulsed RF Immunity

Testing, Proceedings of the IEEE
Page 34 CEEE Technical Progress Bulletin - October 1987

Raa i a ted EMI (cont'd.

)

International Symposium on Electromagnetic Compatibility, San Diego, California, September 16-18, 1986, pp.

270-278.

This paper describes the evaluation of

the performance characteristics of a reverberation chamber excited by pulsed

rf (1.0 ^is to 10 ys, 0.001 duty cycle)

in the frequency range, 0.9 GHz to 10

GHz. The purpose of this work was to

investigate the potential use of a re- verberation chamber for pulsed rf immunity testing of electronic equipment.

Information given includes a description

of the reverberation chamber evaluated,

the instrumentation used for performing

the measurements, and results obtained

showing the pulse dispersion characteristics of the chamber.

[Contact: Myron L. Crawford, (303)

497-5497]

Hill, D.A., An Error Bound for NearField Array Synthesis, IEEE Transactions on Electromagnetic Compatibility,

Vo 1 . EMC- 28 , No. 4, pp. 273-276

(November 1986).

An expression tor the upper bound of any

component of the electric or magnetic

field at any point in a region is derived in terms of a product of two sur- face field integrals. The result is

most useful tor bounding errors in neartield array synthesis, but might have

other applications where upper bounds on

field magnitudes are desired.

[Contact: David A. Hill, (303)

497-3472]

Hill, D.A., Radio-Wave Propagation

From a Forest to a Clearing, Electromagnetics, No. 6, pp. 217-228 (1986).

Kirchhoff integration over a vertical

aperture is used to obtain a simple

expression for radio-wave propagation

from a forest to a clearing. Numerical

results are presented for a frequency of

10 MHz, and the classical recovery effect is observed. Numerical comparisons

are made with a previous integral equation solution, and the agreement is

good.

[Contact: David A. Hill, (303)

497-3472]

Hill, D.A., and Koepke, G.H., A NearField Array of Yagi-Uda Antennas for

Electromagnetic Susceptibility Testing, IEEE Transactions on Electromagnetic Compatibility, Vol. EMC-28, No.

4, pp. 170-178 (November 1986) [condensed version of NBS Technical Note

1082, July 1985],

In electromagnetic-susceptibility testing of electronic equipment, the ideal

incident field is a plane wave. To

approximate this condition, a sevenelement array of Yagi-Uda antennas has

been constructed and tested at a frequency of 500 MHz. The element weightings are determined by a near-field

synthesis technique, which optimizes the

uniformity of the field throughout a rectangular test volume in the near

field of the array. The amplitude and

phase of the electric field have been

measured throughout the test volume with

a short-dipole probe, and the agreement

with theory is excellent.

[Contact: David A. Hill, (303)

497-3472]

Kanda, M., and Driver, L. , An Isotropic Electric-Field Probe With Tapered

Resistive Dipoles for Broadband Use,

100 kHz-18 GHz, IEEE Transactions on Microwave Theory and Techniques, Vol.

MTT-35, No. 2, pp. 124-130 (February

1987) [also appeared in the Proceedings

of the IEEE International Symposium on Electromagnetic Compatibility, San

Diego, California, September 16-18,

1 986, pp. 256-261 ]

.

A new broadband electric-f ield probe,

capable of accurately characterizing and

quantifying electromagnetic (EM) fields,

has been developed at the National

Bureau of Standards. The probe's 8-mm

resistively tapered dipole elements

allow measurement of electric fields

between 1 and 1 600 V/m from 1 MHz to 1

5
CEEE Technical Progress Bulletin - October 1987 Page 35

Radiated EMI (cont'd.

)

GHz, with a flatness of ±2 dB . The

mutually orthogonal dipole configuration

provides an overall standard deviation

in isotropic response, with respect to

angle, that is within ±0.3 dB . Both the

theoretical and developmental aspects of

this prototype electric-field probe are discussed in this paper.

[Contact: Motohisa Kanda, (303)

497-5320]

Kanda, M., and Orr, R.D., Near-Field

Gain of a Horn and an Open-Ended Waveguide: Comparison Between Theory and

Experiment, Proceedings of the Fifth

International Conference on Electromagnetic Compatibility, University of

York, September 29-October 2, 1986

(sponsored by the Institution of Electronic and Radio Engineers, London,

Enyland) , pp. 137-145.

This paper gives the theory and supporting experimental measurements for the

near-field gain of a rectangular pyramidal horn and an open-ended waveguide

(OEG) at 450 Mhz . The empirical nearfield gain for the OEG is derived from

experimental results obtained by a twoantenna method at about 2 GHz . The

theoretical near-field gain for the rec- tangular pyramidal horn is derived from

Schelkunof f

' s formula. Two independent

near-field gain measurements of these

antennas are made using a three-antenna

method and a transfer-standard-probe

method. The discrepancy between theoretical and experimental results is

typically less than ±1 dB

[Contact: Motohisa Kanda, (303)

497-5320]

Randa, J.P. , and Kanda, M. , A Lattice

Approach to Complex Electromagnetic

Environments, Proceedings of the IEEE

International Symposium on Electromagnetic Compatibility, San Diego, Calirornia, September 16-18, 1986, pp.

329-331

We outline an approach to the characterization of complicated electromagnetic

environments based on a lattice (finitedifference) approximation to Maxwell's

equations. Approximate solutions to the

equations are found numerically, subject

to constraints imposed by boundary con- ditions and by measurements of the field

at some number of points. The technique

is illustrated by simple two- and threedimensional examples.

[Contact: James P. Randa, (303)

497-3150]

Reeve, G.R., Alternate EMI Measurement

Techniques for Microelectronic Circuits, Symposium Record, EMC EXPO 86

International Conference on Electromagnetic Compatibility, Washington, D.C.,

June 1 6-1 9, 1986, pp. T26.1-T26.4.

The purpose of this paper, which was orginally presented as an unpublished

talk at a seminar held in March 1985 at

the National Bureau of Standards in

Gaithersburg, Maryland, is to suggest

some new possibilities in metrology for

evaluating the effects of electromagnetic interference on microelectronics

and integrated circuits in particular.

With increasingly complex integrated

circuits being designed for the VeryLarge-Scale Integrated Circuit (VLSI)

programs, and the Very High Speed Integrated Circuit (VHSIC) programs, utilizing larger chip areas and smaller

device geometries, there is some concern

that these units, either by themselves

or in application circuits will prove

more susceptible to the effects of

electromagnetic interference (EMI).

Existing techniques using pin voltage

upset measurements may not be sufficient

to properly characterize the behavior of

these integrated circuits in the presence of EMI. Some possible adaptations

of EMI measurement technigues presently

in use or being developed at the National Bureau of Standards and other laboratories are presented for consideration.

[Contact: George R. Reeve, (303)

497-3557]

Wilson, P.F., and Ma , M.T. , Shielding

Effectiveness Measurements Using an
Page 36 CEEE Technical Progress Bulletin - October 1987

Radiated EMI (cont'd.

)

Apertured TEM Cell in a Reverberation

Chamber, Proceedings of the IEEE

International Symposium on Electromagnetic Compatibility, San Diego, California, September 16-1 8, 1986, pp.

265-269.

Measurements of near-field shielding

effectiveness are performed in a reverberation chamber using an apertured

transverse electromagnetic cell as the

receiver. This configuration allows one

to investigate the electric- and

magnetic-field shielding properties of a material simultaneously. Coupling to

the cell is modeled using small-aperture

theory, and predicted results agree well

with measured data.

[Contact: Perry F. Wilson, (303)

497-3842]

Conducted Electromagnetic Interference

Recently Published

Martzlof f , F.D., and Gruzs, T.M.,

Power Quality Site Survey: Fact,

Fiction and Fallacies, Conference

Record, Industrial & Commercial Power

Systems Technical Conference, Nashville, Tennessee, May 4-7, 1987, pp.

21-33 [also to appear in IEEE Transactions on Industry Applications] . The quality of the power supplied to

sensitive electronic equipment is an important issue. Monitoring disturbances of the power supply has been the

objective of various site surveys, but

results often appear to be instrumentor site-dependent, making comparisons

difficult. After a review of the origins and types of disturbances, the

types of monitoring instruments are

described; a summary of nine published

surveys reported in the last 20 years is

presented. A close examination of

underlying assumptions allows meaningful

comparisons which can reconcile some of

the differences. Finally, the paper

makes an appeal for improved definitions

and applications in the use of monitoring instruments.

[Contact: Francois D. Martzloff, (301)

975-2409]

Reeve, G.R., Alternate EMI Measurement

Techniques for Microelectronic Circuits, Symposium Record, EMC EXPO 86

International Conference on Electromagnetic Compatibility, Washington, D.C.,

June 16-19, 1986, pp. T26.1-T26.4.

The purpose of this paper, which was

orginally presented as an unpublished

talk at a seminar held in March 1985 at

the National Bureau of Standards in

Gaithersburg, Maryland, is to suggest

some new possibilities in metrology for

evaluating the effects of electromagnetic interference on microelectronics

and integrated circuits in particular.

With increasingly complex integrated

circuits being designed for the VeryLarge-Scale Integrated Circuit (VLSI)

programs, and the Very High Speed Integrated Circuit (VHSIC) programs, utilizing larger chip areas and smaller

device geometries, there is some concern

that these units, either by themselves

or in application circuits will prove

more susceptible to the effects of

electromagnetic interference (EMI).

Existing techniques using pin voltage

upset measurements may not be sufficient

to properly characterize the behavior of

these integrated circuits in the presence of EMI. Some possible adaptations

of EMI measurement techniques presently

in use or being developed at the National Bureau of Standards and other laboratories are presented for consideration.

[Contact: George R. Reeve, (303)

497-3557]

ADDITIONAL INFORMATION

Lists of Publications

Gibson, K.A., Page, J.M., and Miller,

C .K . S . , A Bibliography of the NBS

Electromagnetic Fields Division Publications, NBS IR 85-3040 (February

1 986)

.
CEEE Tecnnical Progress Bulletin - October 1987 Page 37

Lists of Publications (cont'd,

)

This bibliography lists publications of

the National Bureau of Standards' Electromagnetic Fields Division for the

period from January 1984 through September 1985, with selected earlier publications from the Division's predecessor

organizations.

[Contact: Kathryn A. Gibson, (303)

497-31 32]

Kline, K.E., and DeWeese, M.E. , Metrology for Electromagnetic Technology:

A Bibliography of NBS Publications,

NBSIR 86-3048 (June 1986).

This bibliography lists the publications

of the personnel of the Electromagnetic

Technology Division of NBS in the period

from January 1970 through December 1985.

A few earlier references that are directly related to the present work of

the Division are included.

LContact: Kathryn E. Kline, (303)

497-3678]

Paila, J.C., and Meiselman, B. , Electrical and Electronic Metrology: A

Bibliography of NBS Electrosystems

Division Publications, NBS List of

Publications 94 (January 1987).

This bibliography covers publications of

the Electrosystems Division, Center for

Electronics and Electrical Engineering,

NBS, and of its predecessor sections for

the period January 1963 to January 1987.

A brief description of the Division's

technical program is given in the introauction.

[Contact: Jenny C. Paila, (301)

975-2220]

Walters, E.J. , Semiconductor Measurement Technology: A Bibliography of NBS

Publications for the Years 1962-1986,

NBSIR 87-3522 (February 1987).

This bibliography contains reports of

work performed at the National Bureau of

Standards in the field of Semiconductor

Measurement Technology in the period

from 1962 through December 1986. An

index by topic area and a list of

authors are provided.

[Contact: E. Jane Walters, (301)

975-2050]

1987 CEEE CALENDAR

September 22-25 (Boulder, CO), Noise

Measurement Seminar#

CANCELED

October 26-28 (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers (Nineteenth Boulder

Damage Symposium). This Symposium is

cosponsored by the National Bureau of

Standards, the American Society for

Testing and Materials, the Air Force

Office of Scientific Research, the Office of Naval Research, and the Defense

Advanced Research Projects Agency and

constitutes a principal forum for the

exchange of information on the physics

and technology of materials for highpower lasers.

Topics to be discussed include new materials, bulk damage phenomena, surface

and thin-film damage, design considerations for high-power systems, and fundamental mechanisms of laser-induced

damage. Proceedings of the Symposium

will be published (Note: The collection

of Symposium proceedings contains information on optics for all aspects of

high-power/high-energy lasers, including

environmental degradation, durability,

fabrication, material growth and deposition processes, and testing) . [Contact:

Susie A. Rivera (303) 497-5342]

December 10-11 (Gaithersburg, MD

)

Power Semiconductor Devices Workshop.

This Workshop, sponsored jointly by IEEE

and NBS, is intended to bring together

for interactive participation those

actively working in the field of power

semiconductor devices. It will be held

in conjunction with the 1987 IEEE International Electron Devices Meeting in

Washington, DC. Four specific topic
Page 38 CEEE Technical Progress Bulletin - October 198 7

1 987 CEEE Calendar (cont'd.

)

areas have been selected, based on the

response to a questionnaire sent to over

200 power device researchers worldwide.

They are: power and high voltage integrated circuits, discrete devices,

device modeling, and packaging. Attendees are expected to be prepared to

contribute to the development of re- sponses to specific questions that arise

in the context of the particular topic

areas; a final schedule identifying the

topic areas should be available at the

end of October. [Contact: David L.

Blackburn, (301) 975-2053]

1 988 CEEE Calendar

February 10-12 (San Diego, CA)

IEEE Semiconductor Thermal and Temperature Measurement Symposium. This

fourth annual SEMI-THERM symposium

is sponsored by the Components, Hybrids,

and Manufacturing Technology Society of

IEEE in cooperation with MBS and constitutes an international forum for the

presentation of new developments in, and

applications relating to, generation and

removal of heat within semiconductor

devices and measurement of junction

temperatures experienced in various

applications and environments. Major

SEMI-THERM topic areas include thermal

measurements, thermal characterization,

applications, and computation and software.

The program includes keynote speakers,

technical presentations, tutorial ses- sions, workshops, and an exhibit. In

addition, the Semiconductor Equipment

and Materials Institute has scheduled in

conjunction with SEMI-THERM a meeting of

its Thermal Measurements Task Force, to

which attendees are invited. [Contact:

Frank F. Oettinger, (301) 975-2054]

May 11-13 (Los Angeles, CA)

Intersociety Conference on Thermal

Phenomena in Fabrication and Operation

of Electronic Components. This Conference is sponsored by the Components,

Hybrids, and Manufacturing Technology

Society of the IEEE, in cooperation with

ASME Committee K-1 6 on Heat Transfer and

NBS. It is intended to provide an interdisciplinary forum f'or exploring

the progress made in understanding,

analyzing, and modeling thermal transport processes and thermally induced

failures in the fabrication, assembly,

and use of logic, memory, and datastorage systems. Major topic areas

covered are 1 ) processing and fabrication, including state-of-the-art semiconductor crystal growing techniques;

thermal stress in wafers, chips, substrates, PC boards, and joints; and

encapsulant behavior with respect to

solidification, outgassing, mechanical

properties, and water vapor diffusion

and absorption; 2) packaging technology,

including means for cooling components

from cryogenic to high temperatures and

reliability as affected by failure

mechanisms such as dopant migration and

interme tallic growth; and 3) peripheral

equipment, including data storage in

both magnetic and optical media and

thermal issues in dot-matrix and thermal

printer heads. The conference is being

held in conjunction with the Electronics

Components Conference (May 9-1 1 ) at the same site. [Contact: Frank F. Oettinger, (301) 975-2054]

Planned

Early summer (Vail, CO)

Combined Short Course on Optical Fiber

and Laser Measurements. [Contact:

Aaron A. Sanders, (303) 497-5341]

Early fall (Boulder, CO)

Fiber Optics Symposium. [Contact:

Aaron A. Sanders, (303) 497-5341]

Late fall (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers (20th Boulder Damage

Symposium). [Contact: Aaron A.

Sanders, (303) 497-5341]
CEEE Technical Progress Bulletin - October 1987 Page 39

CEEE SPONSORS

National Bureau of Standards

Department of Defense

Defense Nuclear Agency; Defense

Advanced Research Projects

Agency; National Security

Agency; Combined Army/Na vy/Ai

Force Calibration Coordination

Group

U.S. Air Force

Newark Air Force Station; Rome

Air Development; Space & Missile

Organization; Hanscom Air Force

Base; U.S. Air Force

Headquarters; Wright-Pa tterson

Air Force Base

U.S. Army

Aviation System Command; Fort

Bel voir; Fort Monmouth; Harry

Diamond Laboratory; Materials & Mechanics Research; Redstone

Arsenal; Strategic Defense

Command

U.S. Navy

Naval Surface Weapons Center;

Naval Ocean Systems Center; Naval

Ordnance Systems Command; Naval

Air Test Center; Ordnance

Disposal Technology Center;

Weapons Support Center/Crane;

Office of Naval Research; Naval

Air Engineering Center

Department of Energy

Energy Systems Research; Fusion

Energy; High Energy & Nuclear

Physics; Bonneville Power

Administration

Department of Justice

Law Enforcement Assistance

Administration

Nuclear Regulatory Agency

Department of Treasury

Bureau of Engraving and Printing

Department of Transportation

National Highway Traffic Safety

The Charles Stark Draper Laboratory

International Copper Research

As sociation

Massachusetts Institute of Technology

Sandia National Laboratories

University of California

Los Alamos Scientific Laboratory

University of Wyoming

U.S. DEPT. OF COMM. 1. BIBLIOGRAPHIC DATA

SHEET (See instructions)

|

PUBLICATION OR 2 REPORT NO.

NBSIR 87-3644

. Performing Organ. Report No. 3. Publication Date October, 1987

4. TITLE AND SUBTITLE

Center for Electronics and Electrical Engineering Technical Progress Bulletin Covering

Center Programs, April to June 1987, with 1987 CEEE Events Calendar

5. AUTHOR(S)

E. Jane Walters, compiler

6. PERFORMING ORGANIZATION (If joint or other than N BS, see in struct ion s) 7. Contract/Grant No. NATIONAL BUREAU OF STANDARDS

U.S. DEPARTMENT OF COMMERCE

GAITHERSBURG, MD 20899

8 . Type of Report & Period Covered

April-June 1987

9.

SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City. State. ZIP)

10. SUPPLEMENTARY NOTES

All technical information included in this document has been approved for publication

previously

J Document describes a computer program; SF-185, FlPS Software Summary, is attached.

11. ABSTRACT (A 200-word or less factual summary of most sign ificant information. If document includes a significant

bibliography or literature survey, mention it here)

This is the nineteenth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. This issue of the CEEE Technical Progress Bulletin covers

the second quarter of calendar year 1987. Abstracts are provided by technical area

for both published papers and papers approved by NBS for publication.

12. KEY WORDS (S/'x to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolons)

antennas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers; semiconductors; superconductors

13. AVAILABILITY

[XX| Uni i mi ted

| | For Official Distribution. Do Not Release to NTIS

| Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C. 20402.

14. NO. OF

PRINTED PAGES

43

15. Price

Order From National Technical Information Service (NTIS), Springfield, VA. 22161 $11.95

U SCOMM-DC 6043-P80
U.& DEPARTMENT OF COMMERCE

NATIONAL BUREAU OF STANDARDS

GAITHERSBURG. MD 20099

RETURN POSTAGE GUARANTEED

OFFICIAL BUSINESS

PENALTY FOR PRIVATE USE $300

BULK RATE

POSTAGE & FEES PAID NBS

PERMfT No. G195

KEY CONTACTS:

Center Headquarters (720) Director, Mr. Judson C. French (301) 975-2220

Deputy Director, Mr. Robert I. Scace (301) 975-2220

Electrosystems Division (722) Chief, Dr. Oekars Petersons (301) 975-2400

Electromagnetic Fields Division (723) Chief, Dr. Ramon C. Baird (303) 497-3131

Electromagnetic Technology Division (724) Chief, Dr. Robert A. Kamper (303) 497-3535

Semiconductor Electronics Division (727) Chief, Mr. Frank F. Oettinger (301) 975-2054

INFORMATION:

For additional Information on the Center for Electronics and Electrical Engineering, write or call:

Center for Electronics and Electrical Engineering

National Bureau of Standards

Metrology Building, Room B-358

Gaithersburg, MD 20899

Telephone (301) 975-2220