A111D4 31^24^

NBSIR 88-3825

MBS

PUBLICATIONS

Center for Electronics and

Electrical Engineering

Technical

Publication

Announcements

Covering Center Programs,

October to December 1987,

with 1988 CEEE Events Calendar

July 1988 '

U.S. Department of Commerce

•QC

100

- U 5 6

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899

#88-382f!

1988 ' C. 2
INTRODUCTION TO THE CEEE TECHNICAL PUBLICATION ANNOUNCEMENTS

This is the fifteenth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. This issue of the CEEE Technical Publication Announcements

covers the fourth quarter of calendar year 1987.

Organization of Bulletin : This issue contains citations and abstracts for Center

publications published in the quarter. Entries are arranged by technical topic as

identified in the table of contents and alphabetically by first author within each

topic. Following each abstract is the name and telephone number of the individual to

contact for more information on the topic (usually the first author) . This issue

also includes a calendar of Center conferences and workshops planned for calendar

year 1988 and a list of sponsors of the work.

Center for Electronics and Electrical Engineering : Center programs provide national

reference standards, measurement methods, supporting theory and data, and traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U.S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor Technology Program, carried out by the Semiconductor Electronics Division in Gaithersburg, MD, and the Signals and Systems Metrology Program, carried out by the Electrosystems Division in Gaithersburg and the Electromagnetic Fields and Electromagnetic

Technology Divisions in Boulder, CO. See the table of contents on the opposite page

for identification of the topics covered by each program, as represented in this

issue. Key contacts in the Center are given on the back cover; readers are encouraged

to contact any of these individuals for further information.

Center sponsors : The Center Programs are sponsored by the National Bureau of Standards and a number of other organizations, in both the Federal and private sectors;

these are identified on page 23.

Note on Publication Lists : Guides to earlier as well as recent work are the publication lists covering the work of each division. These lists are revised and reissued

on an approximately annual basis and are available from the originating division. The

current set is identified in the Additional Information section, page 22.
CEEE Technical Publication Announcements - July 1988

TABLE OF CONTENTS

INTRODUCTION .

Research Information Center

^National Bureau of Standards

Gaithersburg, Maryland 20899

Page 1

f0^ioo

„ (Xi>{&

/<?8g

C'?~

2 5c v^'

inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM . 2

Silicon Materials 2

Gallium Arsenide Materials 2

Analysis Techniques 3

Dimensional Metrology 3

Packaging 4

Integrated Circuit Test Structures 4

Device Physics and Modeling 5

Radiation Effects 6

Insulators and Interfaces 7

Photodiodes 7

Other Semiconductor Metrology Topics 7

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 7

Waveform Metrology 7

Cryoelectronic Metrology .9

Antenna Metrology , 10

Noise Metrology 11

Microwave and Mil lime ter -Wave Metrology 11

Electro-Optic Metrology 15

Other Fast Signal Topics 15

ELECTRICAL SYSTEMS 15

Power Systems Metrology 15

Superconductors 17

ELECTROMAGNETIC INTERFERENCE 18

Radiated Electromagnetic Interference 18

ADDITIONAL INFORMATION 22

1988 CEEE CALENDAR 23

SPONSOR LIST 23

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 2 CEEE Technical Publication Announcements - July 1988

SBilCONDOCTOR TECHNOLOGY

Silicon Materials

Carver, G.P. , Kang, S.S., Ehrstein,

J.R., and Novotny, D.B., Well-Defined

Contacts Produce Accurate Spreading

Resistance Measurements, Journal of

the Electrochemical Society, Vol. 134,

No. 11, pp. 2878-2882 (November 1987).

Values of silicon resistivity calculated

from spreading resistance measurements

agree with values of resistivity determined from four-point probe measurements

over a range of dopant density from 9 x 10 1Lf to 2 x 1 0l 7 cm“3 # The spreading

resistance resistivity values were determined solely using a mathematical

expression based upon a simple geometrical model, without the need for a separate calibration. The measurements were

made using aluminum- silicon contacts

having a well-defined geometry. Arrays

of such contacts were also used to characterize local resistivity variations.

Two-contact spreading resistance measurements are shown to underestimate the

amplitude of resistivity variations

compared to one-contact measurements.

[Contact: Gary P. Carver, (301)

975-2091]

Polak-D ingels, P. , Burdge, G. , Lee, Chi

H., Seabaugh, A.C., Brundage, R.T.,

Bell, M.I., and Albers, J. , An Investigation of Photoconductive Picosecond

Microstripline Switches on SelfImplanted Silicon on Sapphire (SOS)

,

Picosecond Electronics and Optoelectronics II, F.J. Leonberger, C.H. Lee,

F. Capasso, and H. Morkoc, Eds.

(Springer-Verlag, 1987), pp. 232-236.

[Conference Proceedings of the 2d

Topical Meeting on Picosecond

Electronics and Optoelectronics,

Incline Village, Nevada, January 14-16,

1 987]

Silicon-on-sapphire (SOS) switches,

damaged by implantation with 270-keV Si

ions at fluence levels of 10 12 to 2 x

1

0

1

5

cirr 2

, have been characterized by

picosecond cross-correlation, Raman, and

resistivity measurements. Response

times as short as 9 ps were measured for

an implant dose of 10 ll+

. Raman measurements indicate amorphous silicon is not

formed until the dose reaches 2 x lO 1 ^ cm-2

, but there is no further decrease

in response time at the higher doses.

Hie resistivity peaks at the same dose

level at which the minimum response time

is observed, and then decreases for

higher dose. The mobility decreases

monotonically with increasing implant

dose. We find the optimum implantation

condition is one that produces heavy

damage in the material without fully

amorphizing the silicon. Amorphization

decreases the on/off ratio of the device

through reduction of both dark resistance and mobility, without increasing

the speed of the device.

[Contact: Michael I. Bell, (301)

975-2044]

Gallium Arsenide Materials

Forman, R.A., Hill, J.R., Bell, M.I.,

White, G.S., Freiman, S.W., and Ford,

W . , Strain Patterns in Gallium Arsenide Wafers: Origins and Effects,

Proceedings of the International

Symposium on Defect Recognition and

Image Processing in III-V Compounds

(DRIP 1987), Monterey, California,

April 27-29, 1987, E.R. Weber, Ed.

(Elsevier Science Publishers B.V.,

Amsterdam, 1987), pp. 63-71.

Using the rapid x-ray topographic system

described earlier (in the Proceedings of

DRIP I), we have examined a large number

of LEC GaAs wafers, both commercial and

research, and have been able to identify

the sources of some of the observed patterns. We have also studied the effects

of the inhomogeneous strain on the fracture properties of the wafers. The high

gradients of strain cause deviations

from expected crack growth behavior in

fracture tests. These deviations

include crack velocity variations and

crack tip deflections. The grown-in

defects cause point-to-point irreproducibility in hardness and toughness values

for this material. Sequential wafers
CEEE Technical Publication Announcements - July 88 Page 3

Gallium Arsenide Materials (cont'd.)

exhibit closely related topographs and

similar fracture properties. Inclusions

have been identified in indium-doped

wafers and produce a characteristic

topographic pattern when the inclusion

lies in the wafer under study, A characteristic strain pattern propagates

away from the inclusion and produces

annular rings in later wafers. The

relaxation of the bow-tie strain pattern

surrounding the inclusion to the annular

ring pattern is likely related to the

thermoelastic stress patterns described

by Jordan et al.

[Contact: James R, Hill, (301)

975-2049]

Analysis Techniques

Bouldin, C.E., Forman, R.A., and Rell,

M.I., Silicon Photodiode for Fluorescence EXAFS , Review of Scientific

Instruments, Vol. 58, No. 10, pp.

1891-1894 (October 1987).

A large-area silicon diode is used as a fluorescence detector for extended x-ray

absorption fine structure (EXAFS) measurements. A direct comparison of this

diode detector relative to a gas ionization fluorescence detector is made.

Advantages of the diode detector

include: higher signal for a given

photon flux (due to higher quantum

efficiency), vacuum and cryogenic compatibility, freedom from microphonic

noise, good linearity, extremely wide

dynamic range, operation without high

voltage or gas connections, very simple

electronics, and lew cost. A brief

comparison with other detection methods

for fluorescence EXAFS is given. Use of

photodiodes for transmission EXAFS is

discussed.

[Contact: Charles E. Bouldin, (301)

975-2046]

Dimensional Metrology

Galloway, K.F., Diehl, S.E., and Linholm, L.W., Metrological Challenges

in Semiconductor Technology: Electrical Measurements of Dimensions and

Materials Properties Using Integrated

Circuit Test Structures, Proceedings

of the International Conference on

Semiconductor & Integrated Circuit

Technology, Beijing, China, October

1 9-26, 1 986, W. Xiuying and M.

Vangxian, Eds., pp. 685-687 (World

Scientific Publishers, PTE Ltd.,

Singapore, 1986).

The effective characterization and control of the materials, processes, devices, and circuits for very-large-scale

integration (VLSI) is a major concern

for semiconductor technology development. Ihis paper reviews the types of

metrological requirements associated

with VLSI semiconductor technology and

examines dimensional measurements and

materials characterization at the wafer

or chip level. Integrated circuit test

structures for electrical measurements

of dimensions and material properties

are described.

[Contact: Loren W. Linholm, (301)

975-2052]

Nyyssonen, D. , Computer Software for

the Computation of the Scattered Field

and the Optical Microscope Image of

Line Objects Patterned in Thick

Layers, NBSIR 87-3618 (December

1 987)

.

This report provides computer software

for calculating optical microscope

images of line objects patterned in

thick layers (>A/4 thick). The

algorithms used are based on a monochromatic, waveguide model which can

predict the images of line objects with

arbitrary edge geometry, including

multilayer structures with sloped,

curved, asynmetric, and undercut edges.

Along with the computer software

listing, the mathematics of the model, a short description of its structure and

use, and test cases for help in

implementation are given.

[Contact: Robert D. Larrabee, (301)

975-2298]
Page 4 CEEE Technical Publication Announcements - July 1988

Dimensional Metrology (cont'd.)

Postek, M.T., Low Accelerating Voltage

Pitch Standard Based on the Modification of NBS SRM 484, NBSIR 87-3665

(October 1 987)

.

The National Bureau of Standards is

actively developing micrometer and submicrometer standards for the scanning

electron microscope (SEM). This report

summarizes the progress made to extend

the imaging range of the presently

available SRM 484 for use as an interim

standard for low-accelerating-voltage

magnification calibration applications

for the SEM.

[Contact: Michael T. Postek, (301)

975-2299]

Postek, M.T., Resolution and Measurement in the Scanning Electron Microscope, Proceedings of the 45th Annual

Meeting of the Electron Microscope

Society of America, G.W. Bailey, E3.,

pp. 534-537 (October 1987).

The terms ultimate resolution or resolving power refer to the very best performance that can be obtained from a

scanning electron microscope (SEM) given

the optimum instrumental conditions and

sample. However, as it relates to SEM

users, the conventional definitions of

this figure are ambiguous. The numbers

quoted for the resolution of an instrument are not only theoretically derived,

but are also verified through the direct

measurement of images on micrographs.

However, the samples commonly used for

this purpose are specifically optimized

for the measurement of instrument resolution and are most often not typical of

the sample used in practical applications.

[Contact: Michael T. Postek, (301)

975-2299]

Packaging

Harman, G.G. , Acoustic Emission Test

for Microelectronic Tape Automated

Bonding, Acoustic Emission Thermal

Shock Test for Hybrid Microcircuit

Packages, and Designing Microelectronic Welds for Acoustic Emission

Testability, Parts 4, 5, and 9, Sec.

11, Vol. 5, Second Edition, Nondestructive Testing Handbook, P.

Mclntire, Ed., pp. 361 et seq. (American Society for Nondestructive Testing,

1 987) .

In Part 4, an acoustic-emission (AE)

test method for tape automated bonding

(TAB) integrity is presented, consisting

of a precision testing machine that

simultaneously applies a clamping force

on the semiconductor chip and a lifting

force on the electrical interconnecting

leads. Acoustic-emission signals are

transmitted through a waveguide to the

detector. The system also permanently

forms (raises) the leads, which is a

normal requirement for TAB devices.

Large acoustic-emission signals occur

when a lead breaks, a bump lifts, or a

weld crack propagates. Appropriate AE

signal processing is also discussed.

Part 5 describes an acoustic-emissionmonitored test for hybrid microcircuit

package integrity which consists of a

hot stage operating at 400°C, a special

water-cooled acoustic-emission detector

mount, and appropriate signal recording

equipment. In use, the detector is

coupled to the back of a hybrid package

and both are set on the hot stage for

approximately 30 s. Any acoustic-emission signals indicate thermal excursion

damage to the glass-metal seals. The

acoustic-emission signals were correlated with both room- temperature and

1 25°C leak tests of the packages.

Finally, in Part 9, development of tests

to detect poor welds in microelectronic

components is discussed. Failure modes

must be understood, and this is done by

understanding the characteristics of

unacceptable welds.

[Contact: George G. Harman, (301)

975-2097]

Integrated Circuit Test Structures
CEEE Technical Publication Announcements - July 88 Page 5

IC Test Structures (cont'd.)

Galloway, K.F., Diehl, S.E., and Linholm, L.W., Metrological Challenges

in Semiconductor Technology: Electrical Measurements of Dimensions and

Materials Properties Using Integrated

Circuit Test Structures, Proceedings

of the International Conference on

Semiconductor & Integrated Circuit

Technology, Beijing, China, October

1 9-26, 1 986, W. Xiuying and M.

Vangxian, Eds. (World Scientific

Publishers, PTE Ltd., Singapore, 1986),

pp. 685-687.

The effective characterization and control of the materials, processes, devices, and circuits for very-large-scale

integration (VLSI) is a major concern

for semiconductor technology development. This paper reviews the types of

metrological requirements associated

with VLSI semiconductor technology and

examines dimensional measurements and

materials characterization at the wafer

or chip level. Integrated circuit test

structures for electrical measurements

of dimensions and material properties

are described.

[Contact: Loren W. Linholm, (301)

975-2052]

Schafft, H.A., Electromigration Guidelines for t5 Q Measurements, Final

Report of the 1986 Workshop on Wafer

Reliability Assessment, O.D. Trapp,

Ed., Lake Tahoe, California, October

1 9-22, 1986, pp. 149-161 (1 987).

Guidelines for designing electromigration test structures and test procedures

are proposed. These guidelines are

intended to promote the reproducibility

of electromigration characterizations of

metallizations used in VLSI circuits.

[Contact: Ifcirry A. Schafft, (301)

975-2234]

Suehle, J.S., Russell, T.J. , and Galloway, K. F., Interface Trap Effects on

the Hot-Carrier-Induced Degradation of

MOSFETs During Dynamic Stress, IEEE

Transactions on Nuclear Science, Vol®

NS— 34, No. 6, pp. 1 359-1 363 (1 987).

Foundry and hardened n-channel MOSFETs

were stressed with dynamic AC pulses and

with static DC voltages. The pre-radiation hot-carrier-induced degradation is

much more severe in the dynamic case

than in the static case for the hardened

devices. The data suggest that the

pre-radiation hot-carrier degradation is

strongly influenced by the relative

density of interface traps and by the

pulse structure. The post-radiation

hot-carrier degradation is mainly influenced by the amount of radiation-induced

fixed oxide charge.

[Contact: John S. Suehle, (301)

975-2247]

Device Physics and Modeling

Be nne tt, H.S. , Numerical Simulations

on Neutron Effects on Bipolar Transistors, IEEE Transactions on Nuclear

Science, Vol. NS-34, No. 6, pp.

1 372-1 375 (1 987).

A detailed device model that has been

verified by comparisons with experimental measurements on unirradiated, stateof-the-art bipolar devices has been

modified to include the effects of neutron radiation on carrier lifetimes,

concentrations, and mobilities® Numerical experiments on the degradation due

to neutron fluences in the dc common

emitter gains for bipolar transistors

with submicrometer emitter and base

widths are given and compared in general

terms with the few published measurements.

[Contact: Herbert S. Bennett, (301)

975-2079]

Bennett, H.S., and Lowney, J.R., Physics for Models of Gallium Airs©®id©

Devices, Fundamental Research on the

Numerical Modelling of Semiconductor

Devices and Processes, J.J.H. Miller,

Ed. (Boole, Dublin, 1987), pp. 31-36.

[Proceedings of NUMOS 1, First International Workshop on the Numerical Model-
Page 6 CEEE Technical Publication Announcements - July 1988

Device Physics & Modeling (cont'd.)

ling of Semiconductors, Los Anqeles,

California, December 1 1-12, 1986,]

Numerically simulating the behavior of

GaAs devices requires a model for the

distorted densities of states, band edge

shifts, AEc and AEy, and effective

intrinsic carrier concentrations,

n ie* The subscripts c and v denote

the conduction and valence bands,

respectively. Klauder's self-energy

methods (third-level and fifth-level)

are applied to calculate the effects of

carrier-dopant ion interactions on the

densities of states for GaAs. The

effects of carrier-carrier interactions

have been calculated according to the

theory of Abram et al. modified for 300

K. These calculations span most of the

range of densities encountered in GaAs

devices. This range is 5 x 10 16 cm” 3 to

1 0 19 cm" 3 for n-type GaAs and from 10 18

cm-3 to 10 2 ° cm" 3 for p-type GaAs. We

present in this paper theoretical data

on how AEC , AEV , and nj_ e vary

with dopant densities. The variations

with dopant and/or carrier densities of

the distorted densities of states, Fermi

energies screening radii, and first Born

shifts will be given in a future publication.

[Contact: Herbert S. Bennett, (301)

975-2081]

Kim, J.S., The Effect of the Gate

Oxide Thickness on the Speed of MOS

Integrated Circuits, NBSIR 87-3668

(December 1 987)

•

A simple analysis is presented for the

effect of the gate oxide thickness on

the circuit speed in a short-channel

CMOS/inverter delay circuit. The present

analysis is performed within the

first-order theory of the MOS

transistor. The result of the analysis

shows that an optimum value of the gate

oxide thickness exists, beyond which a

further scaling of the gate oxide will

not improve but degrade the circuit

speed. The circuit speed corresponding

to this optimum oxide thickness is the

ultimate upper limit theoretically

possible in a given MOS integrated

circuit. The optimum value of the gate

oxide thickness, to a first-order

approximation, is proportional to the

channel width W, but it is independent

of the channel length L. In particular,

for wide channel devices, this optimum

value exceeds the 5—nm to 30—nm range,

which is of practical significance in

the design and processing of advanced

VLSI circuits. At the optimum oxide

thickness, the square-root of the net

propagation delay is the sum of two

components: the square-root of a purely

parasitic component and the square-root

of a device—dependent component.

[Contact: Jin S. Kim, (301) 975-2238]

Radiation Effects

Singh, G. , Galloway, K. F., and Russell,

T.J. , Temperature Induced Rebound in

Power MOSFETs , IEEE Transactions on

Nuclear Science, Vol. NS-34, No. 6, pp.

1 366-1369 (1987).

Enhancement mode n-channel power MOSFETs

were investigated for rebound. They

received 300 krad(Si) gamma dose under

positive gate bias with source and drain

grounded. The irradiated transistors

were thermally annealed with all terminals shorted or under positive gate bias

with drain and source shorted, at temperatures from 60°C to 150°C. Threshold

voltage rebound was observed for some

transistor types under certain experimental conditions.

[Contact: Thomas J. Russell, (301)

975-2073]

Suehle, J.S., Russell, T.J. , and Galloway, K. F., Interface Trap Effects on

the Hot-Carrier-Induced Degradation of

MOSFETs During Dynamic Stress, IEEE

Transactions on Nuclear Science, Vol.

NS-34, No. 6, pp. 1 359-1 363 (1 987).

Foundry and hardened n-channel MOSFETs

were stressed with dynamic AC pulses and

with static DC voltages. The pre-radiation hot-carrier-induced degradation is
CEEE Technical Publication Announcements - July 88 Page 7

Radiation Effects (cont'd.)

much more severe in the dynamic case

than in the static case for the hardened

devices. The data suggest that the

pre-radiation hot-carrier degradation is

strongly influenced by the relative

density of interface traps and by the

pulse structure. The post-radiation

hot-carrier degradation is mainly influenced by the amount of radiation-induced

fixed oxide charge.

[Contact: John S. Suehle, (301)

975-2247]

Insulators and Interfaces

Baghdadi, A., and Walters, E.J. , Semiconductor Measurement Technology:

Silicon-on-lnsulator: A Categorized

Bibliography Including Abstracts, NBS

Special Publication 400-80 (December

1 987) .

This bibliography of silicon-on-insulator SOI technology was compiled from a

literature search of three data bases;

INSPEC, Engineering Index, and Chemical

Abstracts. The bibliography has been

categorized according to the technique

used to produce the SOI substrate. It

includes the abstracts for most of the

papers. It can either be used to obtain

a quick evaluation of the "state of the

art" in a particular SOI technique, or

as a guide for further in-depth study.

[Contact: Aslan Baghdadi, (301)

975-2062]

Photodiodes

Korde, R., and Geist, J. , Quantum

Efficiency Stability of Photodiodes,

Applied Optics, Vol. 26, pp. 5284-5290

(1 987) .

The stability of the quantum efficiency

of inversion layer, phosphorus-diffused

(n_- conductivity type on jd) and borondiffused (jd on r\) photodiodes has been

investigated. Unsatisfactory siliconsilicon dioxide interfaces, latent recombination centers in the diffused

layers, and moisture absorption by the

device were identified as possible

causes of instability. Diodes were

fabricated using processes in which

these sources of instability were carefully controlled. The resulting diodes

were subjected to various accelerated

aging tests, and the external quantum

efficiency of the diodes was monitored

during the tests. Diodes made by older

procedures, in which some important

parameters affecting stability were not

controlled, were included in the study

for comparison. The major result of

this work is the demonstration that on

jd photodiodes are inherently more stable

than _p on n. types in the ultraviolet and

blue spectral regions, but that stable jd

on ji devices can also be produced with

sufficient care.

[Contact: Jon Geist, (301) 975-2066]

Other Semiconductor Metrology Topics

Sc ace, R.I • , ASTM and SEMI Standards

for the Semiconductor Industry,

Emerging Semiconductor Technology, Vol.

ASTM STP- 960, D.C. Gupta and P.H.

Langer, Eds., pp. 1 5-18 (1 987).

This article, based on an introductory

talk at the symposium, points out the

needs for standards in the semiconductor

industry and briefly describes the

activities of the organizations that

develop them. The direct cooperation

between the several organizations in the

world active in semiconductor standards

development is briefly described

.

Readers are invited to join these

development activities.

[Contact: Robert I. Scace, (301)

975-2220]

FAST SIGNAL ACQUISITION, PROCESSING,

AND TRANSMISSION

Waveform Metrology

Laug, O.B., A Precision Power Amplifier for Power/Energy Calibration Applications, IEEE Transactions on

Instrument and Measurement, Vol. IM-36,
Pape 8 CEEE Technical Publication Announcements - July 1988

Waveform Metrology (cont'd.

)

No. 4, pp. 994-1000 (December 1987).

[Proceedings of the IEEE Instrumentation and Measurement Technology Conference, Boston, Massachusetts, April

27-29, 1987, pp. 129-134.]

A precision power amplifier for use in

power/energy calibration applications is

described. The amplifier was primarily

designed to boost the output amplitude

of a digital generator to provide the

nominal 1 20- or 240-root-mean-square

(rms) voltage component of a "phantom"

calibration power source. The amplifier

has a fixed gain of 40 and can provide a

maximum output voltage swing of 970 V

peak-to-peak or 340-V rms at 1 00-mA rms.

The bandwidth is from dc to 150 kHz, and

at 60 Hz the observed no-load short-term

amplitude and phase instabilities are ±5

ppm and ±5 prad, respectively. The

amplifier design uses high-voltage

n-channel MOSFETs in the output driver

stage together with a unique circuit

topology of op to- iso la tors between the

low-level input stage and the high-level

output stage.

[Contact: Owen B. Laug, (301) 975-2412]

Nahman, N.S., Software Correction of

Measured Pulse Data, Fast Electrical

and Optical Measurements, Vol. 1, J.E.

Thompson and L.H. Luessen, Eds. (Martinus Nijhoff, Dordrecht, 1986), pp.

351-41 7.

The fundamental concern in the software

correction of measured pulse waveform

data is the solution of an ill-posed

deconvolution problem which arises when

one (or both) of the known waveforms is

(are) corrupted by errors due to interference, noise, instrumentation drift,

etc. The variables concerned are related to each other by the convolution

integral. When one of the integrand

functions is unknown while the other two

functions are known, the convolution

equation becomes an integral equation

for the unknown waveform. Solution of

an ill-posed deconvolution problem is

obtained by signal processing or filtering and at most yields an estimate for

the unknown waveform. The objective of

this discussion is to bring out the

ideas of ill-posedness and to give examples of applications to pulse measurement problems which require deconvolution, i.e., the removal (correction) of

pulse source effects and/or measurement

system effects as encountered in signal

pulse waveform measurements and system

impulse response measurements.

[Contact: William L. Gans, (303)

497-3538]

Oldham, N.M., Parker, M.E., Young, A.,

and Smith, A.G., A High-Accuracy, 10

Hz-1 MHz Automatic AC Voltage Calibration System, IEEE Transactions on

Instrument and Measurement, Vol. IM-36,

No. 4, pp. 883-887 (December 1987).

[Proceedings of the IEEE Instrumentation and Measurement Technology Conference, Boston, Massachusetts, April

27-29, 1987, pp. 279-281.]

An automatic system for calibrating

high-accuracy ac voltmeters and calibrators is described. The system is based

on traditional coaxial thermal voltage

converters to provide ac voltage measurement uncertainties of 5 to 20 ppm in

the audiofrequency range and 5 to 250

ppn over the full range from 1 0 Hz to 1 MHz at voltages between 0.5 to 600 V.

Lower levels (0.01 to 0.5 V) are

realized using wideband inductive

dividers. Specialized hardware and

measurement techniques make it possible

to achieve these uncertainties in test

periods of approximately 1 min. Random

errors introduced by the measurement

system are typically less than 2 ppm

(one standard deviation) . [Contact: N. Michael Oldham, (301)

975-2408]

Souders, T.M., Schoenwetter, H.K. , and

Hetrick, P.S., Characterization of a

Sampling Voltage Tracker for Measuring

Fast, Repetitive Signals, IEEE Transactions on Instrumentation and Measurement, Vol. IM-36, No. 4, pp. 956-960

(December 1987). [Proceedings of the
CEEE Technical Publication Announcements - July 88 Page 9

Waveform Metrology (cont'd.

)

IEEE Instrumentation and Measurement

Technology Conference, Boston, Massachusetts, April 27-29, 1987, pp. 240-

243. ]

An equivalent-time sampling and digitizing system is described, together with

test methods for characterizing its

dynamic performance. Time-base errors,

linearity errors, step response parameters, harmonic distortion, and frequency

response are considered, and typical

measurement results are included. The

system is capable of state-of-the-art

measurements for signal frequencies up

to 200 MHz.

[Contact: T. Michael Souders, (301)

975-2406]

Stenbakken, G.N., Characterizing

Square and Triangular Waveforms

,

IEEE Transactions on Instrumentation

and Measurement, Vol. IM-36, No. 4, pp.

961-963 (December 1987). [Proceedings

of the IEEE Instrumentation and Measurement Technology Conference, Boston,

Massachusetts, April 27-29, 1987, pp.

9-11.]

A method has been developed for determining the parameters and errors of

square and triangular waveforms relative

to idealized waveforms, even when the

waveforms are highly distorted. The

method is based on measurements obtained

by sampling the waveform. An idealized

waveform is fitted to these sampled data

using a least-squared error algorithm.

The errors in the waveform are defined

as the deviations between the data samples and the ideal waveform. Also, the

parameters of the measured waveform are

defined as the corresponding parameters

of the fitted ideal waveform.

[Contact: Gerard N. Stenbakken, (301)

975-2440]

Turgel, R.S., and Vecchia, D.F., Precision Calibration of Phase Meters,

IEEE Transactions on Instrumentation &

Measurement, Vol. IM-36, No. 4, pp.

918-922 (December 1987). [Proceedings

of the IEEE Instrumentation and Measurement Technology Conference, Boston,

Massachusetts, April 27-29, 1987, pp.

1 35-1 37.

]

Using the calibration of a phase meter

with a nominally linear response as an

example, a statistical approach is discussed for predicting worst-case offsets

of the meter response characteristic

from the value of the reference standard. A linear calibration curve is

used to model the meter response, and

statistical tests are described which

test the appropriateness of the model

and whether the calculated calibration

curve differs significantly from the

ideal. Various levels of corrections to

be applied can then be determined on the

basis of these tests, and limits to

offsets are calculated for each of the

levels. By extending this approach, it

is possible to predict limits of uncertainty when using the calibrated meter

to make measurements.

[Contact: Raymond S. Turgel, (301)

975-2420]

Cryoelectronic Metrology

Kautz, R.L. , Activation Energy for

Thermally Induced Escape from a Basin

of Attraction, Physics Letters A,

Vol. 125, No. 6,7, pp. 315-319

(November 23, 1987).

In the limit of low temperature, the

most probable path for escape from a basin of attraction is the path which

minimizes the available thermal noise

energy required for escape. This

minimum energy is the activation energy

of escape.

[Contact: Richard L. Kautz, (303)

497-3391 or -3988]

Kautz, R.L. , and Lloyd, F.L. , Pre=

cision of Series-Array Josephson Voltage Standards, Appl. Phys. Lett.

Vol. 51, No. 24, pp. 2043-2045 (December 1 987)

.
Page 10 CEEE Technical Publication Announcements - July 1988

Cryoelectronic Metrology (cont'd.)

Comparison of two series-array Josephson

voltage standards operated at over 1 V

shows that they differ in voltage by

less than two parts in 10 17 . [Contact: Richard L. Kautz, (303)

497-3391 or -3988]

Lloyd, F.L., Hamilton, C.A., Beall,

J.A., Go, D. , Ono, R.H., and Harris,

R.E., A Josephson Array Voltage

Standard at 10 Volts, IEEE Electron

Device Letters, Vol. EDL-8, No, 10, pp,

449-450 (October 1987).

The technology of Josephson voltage

standards has been extended to an array

of 14,184 junctions which is capable of

generating over 150,000 quantized voltage levels spanning the range from -12

to +12 V. This makes possible the

direct calibration of 1 0-V zener reference standards without the use of a

voltage divider.

[Contact: Frances L. Lloyd, (303)

497-3254/3988]

Antenna Metrology

Francis, M.H., and Hill, D.A., Out-ofBand Response of Array Antennas,

Proceedings of the 9th Annual Meeting

and Symposium of the Antenna Measurement Technique Association (AMTA),

Seattle, Washington, September 28-October 2, 1987, pp. 1 4-19 (1 987).

At the National Bureau of Standards,

we have examined the out-of-band

response of array antennas from both a

theoretical and experimental point of

view. Theory shows that the out-of-band

response of an antenna depends primarily

on two factors: the antenna's input

impedance and its directivity. Experiment shows that, for most practical

purposes, the out-of-band response of an

antenna can be estimated from a measurement of the antenna's input reflection

coefficient alone. If the reflection

coefficient is low, the antenna response

will be good; if the reflection coefficient is high, the antenna response

will be poor.

[Contact: Michael H. Francis, (303)

497-5873]

Hill, D.A., and Francis, M.H., Out-ofBand Response of Antenna Arrays,

Proceedings of the 1 987 IEEE International Symposium on Electromagnetic

Compatibility, Symposium Record, Auqust

25-27, 1987, Atlanta, Georgia, pp.

435-438. [An expanded version appeared

as NBSIR 86-2037 (June 1986).]

The response of antenna arrays to outof-band frequencies has been analyzed

using the effective aperture approach.

An average value of effective aperture

can be obtained by averaging the incidence angle and the polarization of the

incident field. Ear-field patterns have

also been calculated by treating the

array element excitations as random

variables. The randomness in the element excitations causes a decrease in

directivity and an increase in sidelobe

level.

[Contact: David A. Hill, (303)

497-3472]

Koepke, G.H., Hill, D.A., and Ma, M.T.,

Analysis of an Array of Log-Periodic

Dipole Antennas for Generating Test

Fields, NBSIR 87-3068 (June 1987).

An analysis of log-periodic dipole

antennas was extended to study their use

in arrays designed for electromagnetic

susceptibility measurements. Parameters

of an array of five log-periodic dipole

antennas were calculated and in some

cases compared to a single log-periodic

dipole antenna. These parameters were

used to evaluate the tradeoffs that

exist in the design of an optimum

transmitting antenna for susceptibility

measurements.

[Contact: Galen H. Koepke, (3 03)

497-5766]

Muth, L.A., Experimental Study of

Interpanel Interactions at 3.3 GHz,

Proceedings of the 9th Annual Meeting

and Symposium of the Antenna Measure-
CEEE Technical Publication Announcements - July 88 Page 11

Antenna Metrology (cont'd.)

ment Technique Association (AMTA),

Seattle, Washington, September 28-October 2, 1987, pp. 25-29 (1987).

A general theoretical approach is formulated to describe the complex electromagnetic environment of an N-element

array. The theory reveals the elementto-element interactions and multiple

reflections within the array. To

experimentally verify some features of

the theory, measurements on experimental

array panels in various configurations

were made. These array panels consisted

of 256 microstrip radiating elements.

In each of the configurations, both the

near-field and portside signals were

measured to study the interactions

between these panels. In particular,

the effects of open-circuited array

panels on the radiation pattern of a

single panel are observed both in the

near field and in the far field. It is

found that internal scattering is the

main mechanism of interaction between

panels, rather than reradiation of signals received from adjacent panels. The

effects of scattering are observable at

the -50 dB level.

[Contact: Lorant A. Muth, (303)

497-3603]

Noise Metrology

Daywitt, W.C., Horn Design Equations

for the NBS Horn-Type Noise Standards, NBSIR 87-3073 (August 1987).

Equations are given for calculating the

interior dimensions of the horn pickup

in the NBS millimeter-wave noise standards. These dimensions ensure negligible internal horn reflections, resulting

in an accurate calculation of the horn

attenuation. Measurements in the WR1 0

horn show a reflection of magnitude less

than 0.001.

[Contact: William C. Daywitt, (303)

497-3720]

Microwave and Millime ter -Wave Metrology

Clague, F.R., and Larsen, N.T., A

Transient Response Error in Microwave

Power Meters Using Thermistor Detectors, 28th ARFTG (Automatic RF Techniques Group) Conference Digest, Saint

Petersburg Beach, Florida, December

4-5, 1986, pp. 79-89 (April 1987).

Broadband coaxial thermistor mounts are

commonly used in automated precision

microwave measurement systems such as

six-port networks. To reduce the effect

of temperature drift and to decrease the

total measurement time, it is desirable

to measure the dc bias voltage on the

thermistor mount very quickly after

turning the radio frequency on or off.

However, investigation has revealed that

a coaxial mount may take much longer to

settle to a stable dc bias voltage than

the thermistor element time constant or

the associated power meter servo bandwidth would indicate. If the bias voltage is measured before this transient

ends, the error in the calculated rf

power can be very large; as much as 1.4

percent has been observed. This paper

describes these transients and gives

measured durations and maximum error for

a number of different bolometer mounts.

[Contact: Fred B. Clague, (303)

497-5778]

Daywitt, W.C., A Simple Technique for

Determining Joint Losses on a Coaxial

Line from Swept-Frequency Reflection

Data, IEEE Transactions on Instrumentation and Measurement, Vol. IM-36, No.

2, pp. 468-473 (June 1987). [Abbreviated version published in CPEM (Conference on Precision Electromagnetic Measurements) Digest, p. 40 (June 23-27,

1986, NBS Gaithersburg, R.F. Dziuba,

Ed. ) ]

A need to separate connector loss from

swept-f requency automatic network analyzer measurements to check an attenuation calculation for a low-loss, coaxial

line has led to a simple graphical technique for determining joint losses.

Measurements show that in addition to

the connector loss, it is also possible
Page 12 CEEE Technical Publication Announcements - July 1988

Microwave & Mil lime ter -Wave (cont'd.

)

to determine joint losses around center

conductor bead supports on the line

itself. Preliminary results indicate

that losses in the millidecibel range

can be determined to a precision of a

few tenths of a millidecibel or better,

even though the data are obscured by

considerable connector loss and calibration error. Results were checked by

independent measurements and show excellent agreement.

[Contact: William C. Daywitt, (303)

497-3720]

Daywitt, W.C., A Simple Technique for

Investigating Defects in Coaxial Connectors, IEEE Transactions on Microwave Theory and Techniques, Vol. MTT35, No. 4, pp. 460-464 (April 1987).

This paper describes a technique that

uses swept-f requency automatic network

analyzer (ANA) data for investigating

electrical defects in coaxial connectors. The technique will be useful to

connector and ANA manufacturers and to

engineers interested in determining

connector characteristics for error

analyses. A simplified theory is presented and the technique illustrated by

applying it to perturbations caused by

the center conductor gap in a 7-mm connector pair.

[Contact: William C. Daywitt, (303)

497-3720]

Engen, G.F., On-Line Accuracy Assessment for the Dual Six-Port ANA: Background and Theory, IEEE Transactions

on Instrumentation and Measurement,

Vol. IM-36, No. 2, pp. 501-506 (June

1 987) • [Abbreviated version published

in CP EM (Conference on Precision Electrical Measurements) Digest, p. 236

(June 23-27, 1986, NBS Gaithersburg,

R.F. Dziuba, Ed.)]

One of the major challenges confronting

the micrcwave metrologist today is that

of providing an accuracy assessment for

the automatic network analyzer (ANA)

•

This paper provides the background and

theory for the recently developed online solution now in use with the sixport systems at the National Bureau of

Standards.

[Contact: Cletus A. Hoer, (303)

497-3705]

Hoer, C.A., On-Line Accuracy Assessment for the Dual Six-Port ANA: Treatment of Systematic Errors, IEEE

Transactions on Instrumentation and

Measurement, Vol. IM-36, No. 2, pp.

514-519 (June 1987).

Expressions are derived for calculating

estimates of the systematic errors in

dual six-port or four-port measurements

of reflection coefficient and scattering

parameters due to imperfections in the

transmission-line standard used to calibrate the system. A new mathematical

model for a four-port reflectometer

makes it easier to visualize and analyze

these errors. In this new model, two of

the three parameters needed to characterize a four-port can be determined

without standards. All imperfections in

the standard perturb only the third

parameter which acts as an impedance

transformer.

[Contact: Cletus A. Hoer, (303)

497-3705]

Hoer, C.A., Some Questions and Answers

Concerning Air Lines as Impedance Standards, 29th ARFTG (Automatic RF Techniques Group) Conference Diqest, Las

Vegas, Nevada, June 1 2-1 3, 1987, pp.

161-173 (1987).

This paper attempts to answer a number

of questions that arise when using one

or more lengths of precision coaxial

transmission line to calibrate a dual

six-port automatic network analyzer,

questions such as: How important is the

quality of the test port relative to

that of the line? What type connectors

should the line standards have? What

are the advantages of using two lines

instead of one line and a through connection when test port imperfections are
CEEE Technical Publication Announcements - July 88

Microwave & Mil lime ter -Wave (cont'd.)

considered? How many lines are optimum

from a quality control point of view?

What should the lengths be? The answers

to these questions appear to be:

© The quality of the line is much more

important than that of the test port.

A perfect line will calibrate out most

imperfections in the test port. An

example is given where 7 5-ft test ports

are calibrated with 50-ft lines, and

then used to measure reflection coefficient relative to 50 ft with very

little error.

© Greatest accuracy is achieved with

line standards having male connectors,

e Two lines get rid of many test port

imperfections that one line cannot.

Three lines will show up a problem if

one line is bad. Five lines will

identify which line is bad. Five is

probably optimum.

o There may not be an optimum for the

actual lengths of a set of lines, but

there does appear to be an optimum

difference in the lengths.

[Contact: Cletus A. Hoer, (303)

497-3705]

Hoer, C.A., and Engen, G.F., Calibrating a Dual Six-Port or Four-Port for

Measuring Two-Ports with Any Connectors, Proceedings of the IEEE-MTT

Symposiun, Baltimore, Maryland, June

2-4, 1986, pp. 665-668 (1 986).

A technique is described for calibrating

a dual six-port or four-port ANA so that

the scattering parameters of two-port

devices having any combination of connectors can be measured. The technique

is a generalization of the "thrureflect-line" calibration technique in

which the "thru" is replaced with a

second length of precision transmission

line.

[Contact: Cletus A. Hoer, (303)

497-3705]

Hoer, C.A., and Eigen, G.F., On-Line

Accuracy Assessment for the Dual SixPort ANA: Extension to Nonmating Connectors, IEEE Transactions on Instrumentation and Measurement, Vol. IM-36,

No. 2, pp. 524-529 (June 1987). [Abbreviated version published in CPEM

(Conference on Precision Electrical

Measurements) Digest, pp. 241-242 (June

23-27, 1986, NBS Gaithersburg, R.F.

Dziuba, Ed. )

]

A technique is described for calibrating

a dual six-port or four-port automatic

netwcrk analyzer (ANA) so that the scattering parameters of two-port devices

having any combination of connectors can

be measured. The technique is a generalization of the "thru-reflectline" calibration technique in which the

"thru" is replaced with a second length

of precision transmission line. Expressions for errors associated with the

second line are derived.

[Contact: Cletus A. Hoer, (303)

497-3705]

Judish, R.M., and Engen, G.F., On-Line

Accuracy Assessment for the Dual SixPort ANA: Statistical Methods for

Random Errors, IEEE Transactions on

Instrumentation and Measurement, Vol.

IM-36, No. 2, pp. 507-513 (June 1987).

[Abbreviated version published in CPEM

(Conference on Precision Electrical

Measurements) Digest, p. 237 (June

23-27, 1986, NBS Gaithersburg, R.F.

Dziuba, Ed. ) ]

A basic property of a measurement process is that repeated observations of

the same quantity will not give identical results due to the presence of random errors. In order to assess the

effects of random errors in our measurement process, we need to build in redundancy. This paper presents a brief

simmary of the statistical methods used

to evaluate the random errors in dual

six-port measurements of reflection

coefficient and scattering parameters.

[Contact: Robert M. Judish, (303)

497-3380]

Juroshek, J.R., On-Line Accuracy Assessment for the Dual Six-Port ANA:
Page 14 CEEE Technical Publication Announcements - July 1988

Microwave & Millimeter-Wave (cont'd.

)

Experimental Results, IEEE Transactions on Instrumentation and Measurement, Vol. IM-36, No. 2, pp. 520-523

(June 1987). [Abbreviated version

published in CPEM (Conference on Precision Electrical Measurements) Digest,

p. 240 (June 23-27, 1986, NBS Gaithersburg, R.F. Dziuba, Ed.)]

When a calibration laboratory such as

the National Bureau of Standards (NBS)

performs a measurement for a customer,

the accuracy which the laboratory attaches to its measurements is a significant part of the customer' s report. In

some instances, the accuracy statement

may be more important to the customer

than the measurement itself. Modern

automated measurement systems can often

perform hundreds of measurements in a

fraction of a second. However, few, if

any, of these systems attempt to assess

the accuracy of those measurements in a

real-time or on-line basis.

The accuracy of a modern automatic network analyzer (ANA) is a function of a

number of variables. Connector quality,

operator technique, system hardware, and

system calibration are just a few of the

many parameters that affect the day-today accuracy of an automated system.

This paper describes the results of the

current efforts at NBS to implement

on-line accuracy estimates for its dual

six-port network analyzers. Results are

presented showing uncertainty estimates

obtained in quasi-real time during the

measurement of customers' devices.

[Contact: John R. Juroshek, (303)

497-5362]

Juroshek, J.R., A Study Into Measurements of Connector Repeatability Using

Highly Reflecting Loads, IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-35, No. 4, pp. 457-460

(April 1 987)

.

This paper investigates the repeatability of measurements of the reflection

coefficient r of highly reflecting

devices with changes in the RF connector

joint. Tie changes in the connector

j oint are due to disconnecting and

reconnecting the connector pair. It is

shown that many of the measurement discrepancies observed in practice can be

explained with a simple connector model.

The paper shows that the sensitivity of

measuring RF connector changes can be

increased by using highly reflecting

loads. Tie changes in r due to changes

in resistance or reactance can be four

times greater for highly reflecting

devices (

j

T | -1 ) than for nonreflecting

devices (Jr|-0). Experiments on two

devices with 1 4-mm connectors are

described in order to compare them with

theory. The basic principles described

in this paper should be beneficial to

connector designers who need to observe

small changes in connector parameters

and to the work of calibration standards

designers, where small connector imperfections are a major part of their measurement uncertainty.

[Contact: John R. Juroshek, (303)

497-5362]

Saulsbery, L.F., and Adair, R.T., AHA

Measurement Results on the ARFTG

Traveling Experiment, 28th ARFTG

(Automatic RF Techniques Group) Conference Digest, Saint Petersburg Beach,

Florida, December 4-5, 1986, pp. 65-78

(April 1 987)

.

The Automatic RF Techniques Group

(ARFTG) Executive Committee has

assembled two traveling measurement

assessment kits. Each of these kits

consists of: 1-dB, 20-dB, 40-dB, and

60-dB attenuators; a 50-ft termination; a

10-cm air line; 1.2-V standing-wave

ratio and 2.0-V standing-wave ratio

mismatched terminations; and a shortcircuit termination. These devices are

equipped with precision 7-mm coaxial

connectors. Tie traveling kits are

being circulated among measurement laboratories who wish to assess their ability to measure reflection coefficient,

attenuation, and phase shift from 300
CEEE Technical Publication Announcements - July 88 Page 15

Microwave & Millimeter -Wave (cont'd.)

MHz to 1 7 GHz. The results obtained on

ten different automated measurement

systems are presented.

[Contact: Cletus A. Hoer, (303)

497-3705]

Electro-Optic Metrology

Polak-Dingels, P. , Burdge, G. , Lee, Chi

H., Seabaugh, A.C., Brundage, R.T.,

Bell, M.I., and Albers, J. , An Investigation of Photoconductive Picosecond

Microstripline Switches on SelfImplanted Silicon on Sapphire (SOS),

Picosecond Electronics and Optoelectronics II, F.J. Leonberger, C.H. Lee,

F. Capasso, and H. Morkoc, Eds.

(Springer-Verlag, 1987), pp. 232-236.

[Conference Proceedings of the 2d Topical Meeting on Picosecond Electronics

and Optoelectronics, Incline Village,

Nevada, January 14-16, 1987]

Silicon-on-sapphire (SOS) switches,

damaged by implantation with 270-keV Si

ions at fluence levels of 10 12 to 2 x 1015 cm" 2

, have been characterized by

picosecond cross-correlation, Raman, and

resistivity measurements. Response

times as short as 9 ps were measured for

an implant dose of 10 11+

. Raman measurements indicate amorphous silicon is not

formed until the dose reaches 2 x 10 15

cm" 2

, but there is no further decrease

in response time at the higher doses.

The resistivity peaks at the same dose

level at which the minimum response time

is observed, and then decreases for

higher dose. The mobility decreases

monotonically with increasing implant

dose. We find the optimum implantation

condition is one that produces heavy

damage in the material without fully

amorphizing the silicon. Amorphization

decreases the on/off ratio of the device

through reduction of both dark resistance and mobility, without increasing

the speed of the device.

[Contact: Michael I. Bell, (301)

975-2044]

Other Fast Signal Topics

Hill, D.A., and Cavcey, K.H., Coupliag

Between Two Antennas Separated by a

Planar Interface, IEEE Transactions

on Geoscience and Remote Sensing, Vol.

GE-25, No. 4, pp. 422-431 (July 1987).

The plane-wave spectrum technique is

used to analyze the coupling between a

pair of antennas separated by a planar

interface. Multiple reflections between

the antennas or between either antenna

and the interface are included in the

formulation. The formulation is used

for model detection of buried objects,

and a low-frequency metal detector example is analyzed in detail. For a transmitting loop and a buried oblate spheroid, the plane-wave spectrum technique

is shown to agree with well-known quasistatic approximations. Some experimental results from a 3-kHz metal detector

are also shown.

[Contact: David A. Hill, (303)

497-3472]

ELECTRICAL SYSTEMS

Power Systems Metrology

Kelley, E.F., and Hebner, R.E., Electro-Optic Field Measurement at a Needle

Tip and Streamer Initiation in Nitrobenzene, 1986 Annual Report of the

Conference on Electrical Insulation and

Dielectric Phenomena, Claymont, Delaware, November 2-6, 1986, pp. 272-277

(October 1987).

Kerr-effect electro-optic observations

of the impulse field are made in the

vicinity of the tip of a needle-sphere

electrode geometry. Distortions from

the Laplacian field indicate charge

injection from the tip along a narrow

channel prior to streamer initiation.

Charge densities estimated to be on the

order of 100 yC/cm^ exist in the channel. An order of magnitude calculation

suggests that sufficient energy is deposited in the channel to cause vaporization of the liquid due to joule heat-
Page 16 CEEE Technical Publication Announcements - July 1988

Power Systems Metrology (cont'd.)

ing. The streamer will initiate where

the charge injection channel touches the

electrode.

[Contact: Edward F. Kelley, (301)

975-2424]

Kelley, E.F., Nehmadi, M., Hebner, R.E.,

McKenny, P.J., and Forster, E.O. , Simultaneous Measurement of Light

Emission, Current Pulses and Growth of

Prebreakdown Streamers in Hexane,

Proceedings of the 1987 Conference on

Electrical Insulation and Dielectric

Phenomena, Gaithersburg, Maryland,

October 19-22, 1987, pp. 1 32-1 37 (October 1 987) . High-speed, image-converter photography

is used to document the growth characteristics of prebreakdown phenomena

emanating from a cathode needle in a

needle-sphere electrode system placed in

a liquid. Hie cathode streamer growth

characteristics are compared to the

pulsed nature of the current feeding the

streamer and light emission from the

streamer. The fact that there is a

strong temporal correlation between the

current and light pulses is confirmed.

However, it is found that no strong

correlation exists between this pulselike behavior and the growth of the

prebreakdown event, and that the streamer grows rather uniformly despite the

discrete nature of the current supplied.

This information should contribute to

the development of theoretical modeling

efforts on the generation and development of prebreakdown phenomena in

liquids

.

[Contact: Edward F. Kelley, (301)

975-2424]

Me Knight, R.H. , Measurement: of Electric Field and Ion-Related Quantities,

Air Ions: Physical and Biological

Aspects, Chapter 3, J. M. Charry and

R.I. Kavet, Eds., pp. 23-55 (CRC Press,

Inc., Boca Raton, Florida, 1987).

Measurements of various quantities to

describe the electrical characteristics

of the atmosphere have been made for

many decades by atmospheric scientists

using a variety of instruments and measurement techniques. Hie purpose of

this chapter is to describe those techniques which have application in

present-day ion-related research.

Topics covered include definitions of

terms; measurements of electric field,

space potential, vertical current density, conductivity, net space-charge

density, unipolar ion density, and ion

mobility; species identification; errors

associated with external electric fields

and off-ground operation of instruments;

and applications of measurements (23

figures, 101 literature references).

[Contact: Ronald H. McKnight, (301)

975-2431]

McKnight, R.H. , Operation of an Ion

Counter in the Ground Plane Under a

Monopolar High-Voltage Line, Proceedings of the Twenty-Third Hanford Life

Sciences Symposium, Interaction of

Biological Systems with Static and ELF

Electric and Magnetic Fields, Richland,

Washington, October 2-4, 1984, pp. 1-7

(1987) .

Studies have been made of the operation

of an ion counter with the inlet located

in the ground plane near a monopolar

high-voltage line. Electric-field

values at the ground plane ranged

between 14.8 kV/m and 29.8 kV/m, while

ion current densities varied from 0.1 to

0.43 yA/m2 . An observed variation in

measured ion density with volumetric

flow rate through the counter appears to

be primarily due to losses in the duct

between the ground-plane opening and the

ion-counter inlet.

[Contact: Ronald H. McKnight, (301)

975-2431]

Van Brunt, R.J. , Herron, J.T., and Fenimore, C., Corona-Induced Decomposition of Dielectric Gases, Gaseous

Dielectrics V, Proceedings of the Fifth

International Symposiun on Gaseous

Dielectrics, Knoxville, Tennessee, May

3-7, 1987 (Pergamon Press, New York,
CEEE Technical Publication Announcements - July 88 Page 17

Power Systems Metrology (cont'd.)

1987), pp. 163-173.

A three-zone model for chemical decomposition of electronegative qases in negative point-plane corona discharges is

proposed which considers the discharge

glow, ion-drift, and main gas volumes

respectively as separate regions of

diminishing chemical activity and

increasing relative size. The proposed

model is shown to be useful in predicting discharge by-product yields and the

dependences of these yields on discharge

current and gas mixture composition. As

an example, the model is applied here to

the decomposition of pressurized SF^

containing trace levels of water vapor

and is shown to yield results for oxyfluoride production that are in satisfactory agreement with observations.

[Contact: Richard J. Van Brunt, (301)

975-2425]

Superconductors

Ekin, J.W., Irregularity in Nb-Ti

Filament Area and Electric Field Versus

Current Characteristics, Cryogenics,

Vol. 27, pp. 603-607 (November 1987).

There is a correlation between irregularity in filament area ("sausaging")

and the shape of a superconductor's

electric field (E) versus current (I)

relationship. The shape of the E-I

characteristic is quantified in terms of

the resistive transition parameter, n,

defined by EocIn . Low values of n less

than about 20 correlate with a wide

filament diameter distribution, while n

values over 50 correspond to a distribution more than 2.5 times smaller. It is

proposed that the low-field (constant)

value of n be used as an index of filament quality in evaluating different

superconductors for practical applications. A model is also suggested to

explain this effect in terms of a locally depressed filament critical current,

which forces current to transfer across

the normal matrix material into neighboring filaments. The relationship

between n and the statistical distribution of filament diameters may be useful

in that it permits an easy method of

estimating the extent of sausaging in

practical multifilamentary Nb-Ti superconductors from measurements of n. [Contact: John W. Ekin, (303) 497-5448]

Ekin, J.W., Transport Critical Currents in Bulk Sintered Y^Ba Cu^Ox and

Possibilities for Its Enhancement

,

Advanced Ceramic Materials, Vol. 2,

Special Issue 3B, pp. 586-591 (1987).

Several general processing methods for

increasing the critical current density,

Jc , in bulk sintered YjBa^UgOx

superconductor are outlined. Data

indicate that the transport J

c

i n bulk

polycrystalline specimens is dominated

by a weak-link region between high-Jc grains and that potentially much higher

Jc may be possible. Two possible

causes of such a weak-link phenomenon

are considered: low Tc phases or

impurities localized in the grain

boundary region, and anisotropy of the

superconducting properties. Several

methods for minimizing the weak-link

effects to increase the Jc are discussed.

[Contact: John W. Ekin, (303) 497-5448]

Ekin, J.W., Rraginski, A. I., Panson,

A.J., Janocko, M.A., Capone, D.W.,

Zaluzec, N.J. , Fl andermeyer , B.,

deLima, O.F., Hong, M., Kwo, J. , and

Liou, S.H., Evidence for Weak Link

and Anisotropy Limitations on the

Transport Critical Current in Bulk

Polycrystalline Y ^Ba Cu^Ox , Journal

of Applied Physics, Vol. 62, No. 12,

pp. 4821-4828 (15 December 1987).

Measurements of the transport criticalcurrent (Jc ), magnetization Jc, and

magnetoresistance in a number of bulk

sintered samples of Y Ba ^Cu ^0X from

several different laboratories indicate

that the transport Jc is limited by

weak-link regions between high Jc
Page 18 CEEE Technical Publication Announcements - July 1988

Superconduc tors (cont'd.

)

regions. The weak-link Jc has a

Josephson character, decreasing by two

orders of magnitude as the magnetic

field is increased from 0.1 to 1 0 mT at

7 7 K. An examination of the grainboundary region in YjBa^CUgC^ shows no

observable impurities or second phases

to the scale of the [001] lattice planes

(~1 2 A). The effect of intrinsic conduction anisotropy is discussed. A

current-transfer model is proposed in

which weak conduction along the c-axis

plays a role in limiting Jc at grain

boundaries. Orienting the grains in the

powder state during processing may

result in enhanced transport Jc in

bulk conductors.

[Contact: John W. Ekin, (303) 497-5448]

Ekin, J. W., Panson, A.J. , Braginski,

A. I., Janocko, M.A., Hong, M., Kwo, J.

,

Liou, S.H. , Capone, D.W., and Flandermeyer, B . , Transport Critical-Current

Characteristics of Y^Ba Cu

3

Ox , Proceedings of Symposium S 1987 Spring

Meeting of the Materials Research Society, Anaheim, California, April 23-24,

1 987, D.U. Gubser and M. Schluter,

Eds., pp. 223-226 (1987).

Voltage vs. current (V-I) characteristics were measured at magnetic fields up

to 24 T at a temperature of 77 K in several Y

1 Ba

2

Cu

3 Ox samples fabricated at

different laboratories. Critical temperatures, Tc , measured by resistivity

were about 93 K. All samples showed

linear V-I characteristics at current

levels much greater than the critical

current, Ic . However, the slope was

significantly less than the normal

resistance at Tc

. The slope increased

with magnetic field and reached the

normal resistance value only at fields

greater than 24 T. Values of the transport critical-current density Jc near

zero magnetic field were generally low

and variable (about 1 to 200 A/cm2 ).

The transport Jc fell sharply when

magnetic field was applied, decreasing

by about an order of magnitude between

1

0

-3 t and 1 T. This leads to an effective upper critical field for transport

critical currents, in Y Ba^^Ox that

is significantly less tnan the upper

critical field defined by the field at

which the resistance increases to the

normal- state value. The transport Jc

appears to be significantly less than

Jc calculated from magnetization data

on similar samples. These results are

consistent with the transport criticalcurrent in the Y^^ 0X system being

dominated by a "weak-link" region

between high-Jc grains.

[Contact: John W. Ekin, (303) 497-5448]

Goodrich, L.F., Pittman, E.S., and Ekin,

J. W., Studies of NbTi Strands Extracted from Coreless Rutherford

Cables, IEEE Transactions on Magnetics, Vol. MAG-23, No. 2, pp. 1642-1645

(March 1 987)

•

The electromechanical properties of NbTi

strands extracted from coreless Rutherford cables were studied to clarify the

relative effects of strand location and

field angle on current degradation that

occurs in cables that have been compacted into a keystone shape. Detailed

critical-current measurements were made

on two samples which were fabricated

under controlled conditions. These are

prototype cables for high-energy physics

applications. Specific factors that are

addressed are the nature, location, and

amount of degradation. This information

is intended to lead to methods for reducing the amount of critical-current

degradation in cable manufacture.

[Contact: Loren F. Goodrich, (3 03)

497-3143]

ELECTROMAGNETIC INTERFERENCE

Radiated Electromagnetic Interference

Crawford, M.L. , A TEM Driven Reverberating Chamber: A Single Facility for

Radiated EMS/V Testing, 10 kHz - 18

GHz?, Proceedings of the 1987 International Conference on Electromagnetic

Compatibility (EMC EXPO), San Diego,

California, May 19-21, 1987, pp.
CEEE Technical Publication Announcements - July 88 Page 19

Radiated EMI (cont'd.)

T1 1.1 8-T1 1.28.

This paper discusses the design, operation, and evaluation of a reverberating

chamber, excited by a transverse electromagnetic (TEM) transmission line, for

use in establishing radiated electromagnetic fields for susceptibility/ vulnerability (EMS/V) testing of electronic

equipment. The potential range of application is from 10 kHz to 18 GHz.

Included are brief descriptions of the

facility, the operation procedures, the

method for determining the test field

amplitude inside the chamber, and the

evaluation of the chamber's electrical

parameters such as VSWR and E-field

strength as a function of input power.

Also presented are the E-field spatial

uniformity and a summary of measurement

uncertainties and conclusions derived

from the test results.

[Contact: Myron L. Crawford, (3 03)

497-5497]

Crawford, M.L., and Bean, J.L., NSWC

Reverberating Chamber-A High Power

Microwave Exposure Chamber,

Proceedings of the Third National High

Power Microwave Technical Conference,

Kirtland Air Force Base, New Mexico,

December 1-5, 1986, unpaged (1 987).

[An expanded version appeared under the

title "Electromagnetic Radiation Test

Facilities Evaluation of Reverberation

Chambers Located at NSWC, Dahlgren,

Virginia," NBSIR 86-3051 (June 1986).]

This paper describes measurement procedures and results obtained from evaluating the reverberating chamber facility

located at the Naval Surface Weapons

Center (NSWC), Dahlgren, Virginia. The

facility was developed by the NSWC for

use in measuring and analyzing the electromagnetic susceptibility/ vulnerability

(EMS/V) of weapon systems and the

shielding effectiveness of enclosures

and shielding materials. A brief description of the facility is given including the instrumentation used for

performing the evaluation and calibration of the facility and for its use in

performing EMS/V tests. Measurements

described include the chamber's: (1)

insertion loss of coupling efficiency,

(2) tuner(s) effectiveness, and (3) test

zone E- field uniformity and absolute

amplitude calibration. Advantages and

limitation for use of the reverberating

chamber method are summarized along with

comments on interpreting measurement

results and on conclusions derived from

these studies.

[Contact: Myron L. Crawford, (303)

497-5497]

Crawford, M.L., and Koepke, G.H., Performing EM Susceptibility/Vulnerability

Measurements Using a Reverberation

Chamber, Proceedings of the 7th

International Symposium and Technical

Exhibition on EMC, Zurich, Switzerland,

March 3-5, 1987, pp. 1 21-126 (1987).

This paper discusses the design, evaluation, and use of a reverberation chamber

for performing electromagnetic susceptibility (EMS) measurements of electronic

equipment. Included are brief descriptions of the test procedures, application advantages and limitations, some

EMS test results, interpretation of test

results relative to free-space test

methods, and an estimate of measurement

uncertainties

•

[Contact: Myron L. Crawford, (303)

497-5497]

Francis, M.H. , and Hill, D.A., Out-ofBand Response of Array Antennas,

Proceedings of the 9th Annual Meeting

and Symposium of the Antenna Measurement Technique Association (AMTA),

Seattle, Washington, September 28-October 2, 1987, pp. 1 4-19 (1 987).

At the National Bureau of Standards,

we have examined the out-of-band

response of array antennas from both a

theoretical and experimental point of

view. Theory shows that the out-of-band

response of an antenna depends primarily

on two factors: the antenna's input
Page 20 CEEE Technical Publication Announcements - July 1988

Radiated EMI (cont'd.)

impedance and its directivity. Experiment shows that, for most practical

purposes, the out-of-band response of an

antenna can be estimated from a measurement of the antenna's input reflection

coefficient alone. If the reflection

coefficient is low, the antenna response

will be good; if the reflection coefficient is high, the antenna response

will be poor.

[Contact: Michael H. Francis, (303)

497-5873]

Hill, D.A., and Cavcey, K.H., Coupling

Between Two Antennas Separated by a

Planar Interface, IEEE Transactions

on Geoscience and Remote Sensing, Vol.

GE-25, No. 4, pp. 422-431 (July 1987).

The plane-wave spectrum technique is

used to analyze the coupling between a

pair of antennas separated by a planar

interface. Multiple reflections between

the antennas or between either antenna

and the interface are included in the

formulation. The formulation is used

for model detection of buried objects,

and a low-frequency metal detector

example is analyzed in detail. For a

transmitting loop and a buried oblate

spheroid, the plane-wave spectrum

technique is shown to agree with

well-known quasi-static approximations.

Some experimental results from a 3-kHz

metal detector are also shown.

[Contact: David A. Hill, (303)

497-3472]

Hill, D.A., and Francis, M.H., Out-ofBand Response of Antenna Arrays,

Proceedings of the 1987 IEEE International Symposium on Electromagnetic

Compatibility, Symposium Record, August

25-27, 1987, Atlanta, Georgia, pp.

435-438 (1987). [An expanded version

appeared as NBSIR 86-2037 (June

1 986) .]

The response of antenna arrays to outof-band frequencies has been analyzed

using the effective aperture approach.

An average value of effective aperture

can be obtained by averaging the incidence angle and the polarization of the

incident field. Far-field patterns have

also been calculated by treating the

array element excitations as random

variables. The randomness in the element excitations causes a decrease in

directivity and an increase in sidelobe

level.

[Contact: David A. Hill, (303)

497-3472]

Jesch, R.L., Measurement of Shielding

Effectiveness of Different Cable and

Shielding Configurations by ModeStirred Techniques, NBSIR 87-3076

(October 1987).

The shielding effectiveness of cable

configurations having different shielding arrangements and of shielding configurations used to terminate cable

shields for helicopter wiring was measured by mode-stirred techniques. The

mode-stirred measurements were taken at

discrete frequencies between 200 MHz and

6 GHz. In addition, shielding effectiveness data on the shielding configurations were also obtained in a transverse electromagenetic cell down to 1 MHz • A description of the cable and

shielding configurations is given along

with plots of the measured shielding

effectiveness data as a function of

frequency.

[Contact: Ramon L. Jesch, (303)

497-3496]

Kanda, M., and Orr, R.D., Near-Field

Gain of a Horn and an Open-Ended Waveguide: Comparison Between Theory and

Experiment, IEEE Transactions on

Antennas and Propagation, Vol. AP-35,

No. 1, pp. 33-40 (January 1987). [Also

appeared in Symposiun Digest, proceedings of the AP-S International Symposium 1986, Vol. I, pp. 91-94 (June 8-13,

1986) and in the Proceedings of the

Fifth International Conference on Electromagnetic Compatibility, University

of York, United Kingdom, September

29-October 2, 1986, pp. 1 37-145.]
CEEE Technical Publication Announcements - July 88 Page 21

Radiated EMI (cont'd.)

Generating a standard electromagnetic

field requires knowledge of the gain of

the transmitting antenna. The theory

and supporting experimental measurements

for the near-field gain of a pyramidal

horn and an open-ended waveguide (OEG)

at 450 MHz are given. The empirical

near-field gain for the OEG is derived

from experimental results obtained by a

tw-antenna method at about 2 GHz . The

theoretical near-field gain for the rectangular pyramidal horn is derived from

Schelkunoff ' s formula. Two independent

near-field gain measurements of these

antennas are made using a three-antenna

method and a transfer-standard-probe

method. The discrepancy between theoretical and experimental results is

typically less than ±1 dB

.

[Contact: Motohisa Kanda, (303)

497-5320]

Koepke, G.H., Hill, D.A., and Ma, M.T.,

Analysis of an Array of Log-Periodic

Dipole Antennas for Generating Test

Fields, NBSIR 87-3068 (June 1987).

An analysis of log-periodic dipole

antennas was extended to study their use

in arrays designed for electromagnetic

susceptibility measurements. Parameters

of an array of five log-periodic dipole

antennas were calculated and in some

cases compared to a single log-periodic

dipole antenna. These parameters were

used to evaluate the tradeoffs that

exist in the design of an optimum

transmitting antenna for susceptibility

measurements

.

[Contact: Galen H. Koepke, (303)

497-5766]

Ma, M.T., and Bensema, W.D., Automated

TEM Cell for Measuring Unintentional EM

Emissions, Proceedings of the 1987

International Conference on Electromagnetic Compatibility (EMC EXPO) , San

Diego, California, May 19-21, 1987, pp.

T1 1 . 1 -T1 1.1 2 (1 987) .

This paper summarizes the basic electrical properties of a transverse electromagnetic (TEM) cell, and the underlying

theoretical background, based on which a

TEM cell is used to measure accurately

the emission of an unknown, unintentional leakage source. The theory and measurements have been verified by the

results of a simulated example and two

experiments using a spherical dipole

radiator and a small loop antenna.

Recent development of an automated measurement system is also discussed.

[Contact: Mark T. Ma, (303) 497-3800]

Randa, J.P., and Kanda, M., A New

Approach to Volumes Irradiated by

Unknown Sources, IEEE Transactions on

Electromagnetic Compatibility, Vol.

EMC- 29, No. 4, pp. 273-281 (November

1 987)

.

We suggest an approach to the characterization of electromagnetic environments

irradiated by unknown sources. The

approach is based on the numerical solution of Maxwell's equations subject to

the constraints imposed by the measured

values of the field at a small number of

measurement points and by boundary conditions. A thorough examination of a method for the numerical solution is

presented. The examples attempted

demonstrate the approach but reveal

deficiencies in the nunerical method.

Possible future directions are suggested.

[Contact: James P. Randa, (303)

497-3150]

Wilson, P.F., and Ma, M.T., Techniques

for Measuring the Shielding Effective^

ness of Materials, Proceedings of the

7th International Symposium and Technical Exhibition on EMC, Zurich, Switzerland, March 3-5, 1987, pp. 547-552. [A

more complete version appeared as NBS

Technical Note 1 095 (May 1 986).]

Four methods for measuring the shielding

effectiveness of materials under various

conditions are considered. Coaxial

transmission line holders and a timedomain system are used to simulate

plane-wave shielding performance. The
Page 22 CEEE Technical Publication Announcements - July 1988

Radiated EMI (cont'd.)

dual (TEM) cell and an apertured TEM

cell in a reverberating chamber are used

to investigate near-field shielding

capability. Both theoretical and

experimental results are discussed.

[Contact: Perry F. Wilson, (303)

497-3842]

Wu, D.I., and Chang, D.C., An Investigation of a Ray-Mode Representation of

the Green's Function in a Rectangular

Cavity, NBS Technical Note 1312 (September 1 987) •

In a rectangular cavity, it is well

known that a point source-excited field

can be represented either in terms of

summation of modes or in terms of rays

produced by the equivalent image

sources. Both representations involve

series that are slowly convergent, so

computation of fields inside the cavity

is difficult. To obtain a numerically

efficient scheme, a hybrid ray-mode

representation is developed here using

the finite Poisson summation formula.

The modal representation is modified in

such a way that all the modes near

resonance are retained while the truncated remainder of the mode series is

expressed in terms of a weighted contribution of rays. For a large cavity, the

contribution of rays from far away

images becomes small; therefore, the ray

sum can be approximated by one or two

dominant terms without a loss of numerical accuracy. To illustrate the accuracy and the computational simplification

of this ray-mode representation, numerical examples are included with the conventional mode series (summed at the

expense of long computation time) serving as a reference.

[Contact: Doris I. Wu, (303) 497-3842]

ADDITIONAL INFORMATION

Lists of Publications

Gibson, K. A., Page, J. M., and Miller,

C .K • S . , A Bibliography of the NBS

Electromagnetic Fields Division Publications, NBS IR 85-3040 (February

1986) .

This bibliography lists publications of

the National Bureau of Standards' Electromagnetic Fields Division for the

period from January 1984 through September 1985, with selected earlier publications from the Division' s predecessor

organizations

•

[Contact: Kathryn A. Gibson, (303)

497-3132]

Kline, K. E., and DeWeese, M.E., Metrology for Electromagnetic Technology:

A Bibliography of NBS Publications

,

NBSIR 87-3074 (June 1987).

This bibliography lists the publications

of the personnel of the Electromagnetic

Technology Division of NBS in the period

from January 1970 through December 1986.

A few earlier references that are directly related to the present work of

the Division are included.

[Contact: Sarabeth Moynihan, (303)

497-3678]

Palla, J.C., and Meiselman, B., Electrical and Electronic Metrology: A

Bibliography of NBS Electrosystems

Division Publications, NBS List of

Publications 94 (January 1988).

This bibliography covers publications of

the Electrosystems Division, Center for

Electronics and Electrical Engineering,

NBS, and of its predecessor sections for

the period January 1963 to January 1988.

A brief description of the Division'

s

technical program is given in the introduction.

[Contact: Jenny C. Palla, (301)

975-2220]

Walters, E.J. , Semiconductor Measurement Technology, NBS List of Publications 72, [a bibliography of NBS

publications for the years 1962-1987]

(March 1 988)

•

This bibliography contains reports of

work performed at the National Bureau of
CEEE Technical Publication Announcements - July 88 Page 23

Lists of Publications (cont'd.)

Standards in the field of Semiconductor

Measurement Technology in the period

from 1962 through December 1987. An

index by topic area and a list of

authors are provided.

[Contact: E. Jane Walters, (301)

975-2050]

1988 CEEE Calendar

September 12-14, 1988 (San Jose, CA)

VLSI and GaAs Chip Packaging Workshop.

This Workshop is co-sponsored by the

Components, Hybrids, and Manufacturing

Technology Society of IEEE and NBS;

attendees are expected to be knowledgeable in the field and to participate in

discussions. Topic areas include: VLSI

and wafer-scale package design (characterization and implementation, cost and

performance-driven solutions); package

thermal design (characteristics, results, and issues); package interconnection options (wire bonding, TAB, flip

chip, or optical) ; GaAs IC packaging

(high-speed packaging considerations);

package electrical issues (reduction of

parasitics, improvements in electrical

performance, reduction in line resistance); integrating package desiqn (from

die to system, including assembly and

test issues); VLSI package materials

advancements; die-attach solutions for

large chips; and new failure mechanisms

in VLSI packaging. [Contact: George G.

Harman, (301) 975-2097]

Planned

Early fall (Boulder, CO)

Fiber Optics Symposium. [Contact:

Aaron A. Sanders, (303) 497-5341]

Late fall (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers (20th Boulder Damage

Symposium). [Contact: Aaron A.

Sanders, (303) 497-5341]

CEEE SPONSORS

National Bureau of Standards

Department of Defense

Defense Nuclear Agency; Defense

Advanced Research Projects

Agency; National Security Agency;

Combined Army/Navy/Air Force

Calibration Coordination Group

U.S. Air Force

Newark Air Force Station; Rome

Air Development Center; Space &

Missile Organization; U.S. Air

Force Headquarters;

Wright-Patterson Air Force Base;

Technical Applications Center;

Kirtland Air Force Base;

Cryptological Support Center

U.S. Army

Fort Belvoir; Fort Monmouth;

Harry Diamond Laboratory;

Materials & Mechanics Research

Center; Redstone Arsenal;

Strategic Defense Command;

AVRADCOM (Aviation); Fort

Huachuca

U.S. Navy

Naval Ocean Systems Center;

Weapons Support Center/Crane;

Office of Naval Research; Naval

Sea Systems Command; Naval

Postgraduate School; Naval Ship

Research Development Center;

Naval Air Systems Command; Naval

Research Laboratory; Aviation

Logistics Center/Patuxent; Naval

Explosive Ordnance

Department of Commerce

Patent and Trademark Office

Department of Energy

Energy Systems Research; Fusion

Energy; High Energy & Nuclear

Physics; Bonneville Power

Administration

Department of Justice

Law Enforcement Assistance

Administration

National Aeronautics and Space

Administration

Goddard Space Flight Center;

Lewis Research Center

Nuclear Regulatory Commission

Department of Transportation

National Highway Traffic Safety

Administration

Sandia National Laboratories

NBS-114A (REV. 2-80

U.S. DEPT. OF COMM.

BIBLIOGRAPHIC DATA

SHEET (See instructions)

4. TITLE AND SUBTITLE

1. PUBLICATION OR

REPORT NO.

2. Performing Organ. Report No.

NBSIR 88-3825

3. Publication Date

July 1988

Center for Electronics and Electrical Engineering Technical Publication Announcements

Covering Center Programs, October to December 1987, with 1988 CEEE Events Calendar

5. AUTHOR(S)

6

E. Jane Walters, compiler

. PERFORMING ORGANIZATION (If joint or other than NBS

,

see instructions) 7. Contract/Grant No.

NATIONAL BUREAU OF STANDARDS -

U.S. DEPARTMENT OF COMMERCE * GAITHERSBURG, MD 20899

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City

,

State, ZIP)

U.S. Department of Commerce

. Type of Report & Period Covered

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

10. SUPPLEMENTARY NOTES

All technical information included in this document has been previously approved for

publication.

I | Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bibliography or literature survey, mention it here)

This is the fifteenth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. This issue of the Center for Electronics and Electrical

Engineering Technical Publication Announcements covers the fourth quarter of

calendar year 1987. Abstracts are provided by technical area for papers published

this quarter.

12. KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolons)

antennas; electrical engineering;, electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers; semiconductors; superconductors

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KEY CONTACTS; Center Headquarters (720) Director, Mr. Judson C. French (301) 975-2220

Deputy Director, Mr. Robert I. Scace (301) 975-2220

Electrosystems Division (722) Chief, Dr. Oskars Petersons (301) 976-2400

Electromagnetic Fields Division (723) Chief, Dr. Ramon C. Baird (303) 497-3131

Electromagnetic Technology Division (724) Chief, Dr. Robert A. Kamper (303) 497-3535

Semiconductor Electronics Division (727) - Chief, Mr. Frank F. Oettlnger (301) 975-2054

INFORMATION:

For additional Information on the Center for Electronics and Electrical Engineering, write or call:

Center for Electronics and Electrical Engineering

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Telephone (301) 975-2220