NBSIR 87-3620

Center for Electronics and

Electrical Engineering

Technical

Publication

Announcements

Covering Center Programs,

October to December 1986,

with 1987 CEEE Events Calendar

August 1987

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899
INTRODUCTION TO THE CEEE TECHNICAL PUBLICATION ANNOUNCEMENTS

THIS is the eleventh issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and Electrical Engineering. This issue of the CEEE Technical Publication Announcements

covers the fourth quarter of calendar year 1 986.

Organization of Bulletin ; This issue contains citations and abstracts for Center

papers published in the quarter. Entries are arranged by technical topic as identifieo in the table of contents and alphabetically by first author within each topic.

Following each abstract is the name and telephone number of the individual to contact

tor more information on the topic (usually the first author) • This issue also induces a calendar of Center conferences and workshops planned for calendar year 1987,

some preliminary events for 1988, and a list of sponsors of the work.

Center for Electronics and Electrical Engineering ; Center programs provide national

reference standards, measurement methods, supporting theory and data, and traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U.S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor Technology Program, carried out by the Semiconductor Electronics Division in Gaithersburg, MD, and the Signals and Systems Metrology Program, carried out by the Electrosystems Division in Gaithersburg and the Electromagnetic Fields and Electromagnetic

Technology Divisions in Boulder, CO. See the table of contents on the opposite page

for identification of the topics covered by each program, as represented in this

issue. Key contacts in the Center are given on the back cover; readers are

encouraged to contact any of these individuals for further information.

Center sponsors : The Center Programs are sponsored by the National Bureau of Standards and a number of other organizations, in both the Federal and private sectors;

these are identified on page 1 3.

Note on Publication Lists : Guides to earlier as well as recent work are the publication lists covering the work of each division. These lists are revised and reissued

on an approximately annual basis and are available from the originating division.

The current set is identified in the Additional Information section, page 10.
CEEE Technical Publication Announcements - August 1987 Page 1

TABLE OF CONTENTS

INTRODUCTION inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM

Dimensional Metrology • 2 Packaging 2 Device Physics and Modeling 2

Radiation Effects 3

Other Semiconductor Topics 4

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 5

Waveform Metrology 5

Cryoelectronic Metrology • 6

Laser Metrology 6

Microwave and Mil lime ter-Wave Metrology 6

Optical Fiber Metrology 6

ELECTRICAL SYSTEMS 7

Power Systems Metrology 7

Superconductors 8

ELECTROMAGNETIC INTERFERENCE 9

Radiated Electromagnetic Interference • 9

Conducted Electromagnetic Interference .... 9

ADDITIONAL INFORMATION 10

1987 CEEE CALENDAR 11

SPONSOR LIST 13

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 2 CEEE Technical Publication Announcements - August 87

SEMICONDOCTOR TECHNOLOGY

Dimensional Metrology

Postek, M.T., and Joy, D.C., Microelectronics Dimensional Metrology in

the Scanning Electron Microscope, Part

I, Solid State Technology, Vol, 29,

No, 11, pp. 145-150 (November 1986);

Part II, Solid State Technology, Vol.

29, No. 12, pp. 77-85 (December 1986)

[also to appear in NBS Journal of

Research]

.

The increasing integration of microelectronics into the submicrometer region

for very-large-scale and very-high-speed

integrated-circuit applications necessitates the examination of these structures both tor linewidth measurement and

for detect inspection by systems other

than the optical microscope, The low

beam-voltage scanning electron microscope (SEM) has been employed recently

in this work due to- its potentially high

spatial resolution and to its large

depth of field, Ihe applications of the

scanning electron microscope to microelectronics inspection and metrology are

discussed in light of the present instrument specifications and capabilities, and the processing controls re- quired for submicrometer processing are

examined. The discussion includes effects of the electron beam/sample interaction and its modeling with the Monte

Carlo technique. Various sources of

error in SEM metrology are also ex- amined. In conclusion, the prospect of

automated wafer inspection and progress

in estaolishing SEM measurement standards are outlined,

[Contact: Michael T. Postek, (301)

975-2299]

Packaging

Oettinger, F.F., Thermal Characterization of Integrated Circuits — A Tutorial, Proceedings of Semiconductor

Thermal and Temperature Measurement

Symposium, Scottsdale, Arizona, December 9-1 1 , 1986, pp. T2-1 to T2-4

(1986) .

This tutorial deals with the practicalities of the thermal characterization of

integrated circuit devices and packages,

utilizing both computational and experimental techniques.

[Contact: Frank F. Oettinger, (301)

975-2054]

Device Physics and Modeling

Bennett, H.S., High Dopant and Carrier

Concentration Effects in Gallium Arsenide: Band Structure & Effective

Intrinsic Carrier Concentrations,

Journal of Applied Physics, Vol. 60,

No. 8, pp. 2866-2874 (1 5 October

1986)

,

The quality and reliability of predictions from numerical simulations of

GaAs/AlGaAs devices, such as he terojunction bipolar transistors, depend on

input parameters. These parameters

include the variations with doping and

carrier concentrations of the valence

and conduction band edges and of the

effective intrinsic carrier concentrations for heavily doped p-type and

n-type gallium arsenide. The Klauder

self-energy method is used to calculate

the effects of the one-body interactions

among the dopant ions and the carriers

in heavily doped gallium arsenide at 300

K. The many-body interactions of ex- change and correlation are estimated by

interpreting optical absorption measurements and by calculations based on

degenerate theory. When densities

exceed 10^^ crtr ^ in p-type and 10^^ cm” ^ in n-type GaAs , one-body and many-body

terms become of the same order of magnitude and should be included in calculations of band structure changes and of

properties which depend on the density

of states, such as carrier transport and

effective intrinsic carrier concentrations.

[Contact: Herbert S. Bennett, (301)

975-2079]

Bennett, H.S., Modeling Silicon Emitters for VLSI Transistors, Proceedings of the workshop on New Developments in the Physics of Homojunctions
CEEE Technical Publication Announcements - August 87 Page 3

Device pnysics and Modeling , cont'd.

and heterojunctions, Leuven, Belgian,

May 28-29, 1986, unpaged (December

1 986)

The accuracy and reliability of predictions from numerical simulations of

advanced bipolar transistors for verylarge-scale integration (VLSI) applications aepend on model parameters* These

parameters include the variations with

doping and carrier concentrations in

both n-type and p-type silicon of 1 ) the

valence and conduction band edges, 2)

the effective intrinsic carrier concentrations, 3) the minority carrier mobilities, and 4) the minority carrier lifetimes* This paper reviews recent advances in device physics for modeling

the emitters of bipolar transistors with

suomicrometer dimensions and high con-

^®^^trations of dopant ions and car- riers*

[Contact: Herbert S* Bennett, (301)

975-2079]

Lowney, J*R*, Impurity RanH«? anH PanH

Tailing in n-Type GaAs, Journal of

Applied Physics, Vol* 60, No* 8, pp*

2854-2859 (15 October 1986)*

The censities of states of the valence

and conduction bands of n-type GaAs have

been calculated for a donor density of 10l7 cm- 3 at 300 K and 20 K* Both the

donor-carrier and carrier-carrier interactions have been included* Band tails

appear on Doth bands and the energy gap

is narrowed* Calculations were also

performed tor a donor density of 10^3

cm”3. The results show the formation of

an impurity band at 20 K, whereas a band

tail exists at 300 K*

[Contact: Jeremiah R* Lowney, (301)

975-2048]

Radiation Effects

Hefner, A*R*, Blackourn, D*L* , and Galloway, K* F * , The Effech of Neutrons

on the Characteristics of the Insulated

Gate Bipolar Transistor (IGBT), IEEE

Transactions on Nuclear Science, Vol*

NS-33, No* 6, pp* 1428-1434 (December

1 986)

The effects of neutrons on the operating

characteristics of Insulated Gate Bipolar Transistors (IGBT) are described*

Experimental results are presented for

devices that have been irradiated up to

a fluence of 10^3 neutrons/cm^, and an analytical model is presented which

e3q>lains the observed effects* It is

found that with increasing neutron fluence, the on-state voltage increases,

the switching time decreases, and the

saturation current decreases* For the

range of fluences studied, the observed

effects result from a reduction in

minority carrier lifetime in the IGBT

and not from changes in the effective

dopant density* The effects of neutrons

on the IGBT are compared with their

known effects on power metal oxide- semiconductor field-effect transistors (MOSFETs), and it is shown that the IGBT

characteristics begin to degrade at a fluence that is an order of magnitude

less than the fluence at which the power

MOSFET begins to degrade* At high

fluences, the IGBT takes on the characteristics of a power MOSFET*

[Contact: Allen R* Hefner, (301)

975-2071]

Pugh, R*D*, Johnston, A*H*, and Galloway, K*F*, Characteristics of the

Breakdown Voltage of Power MOSFETs

After Total Dose Irradiation, IEEE

Transactions on Nuclear Science, vol*

NS-33, No* 6, pp* 1460—1464 (December

1986)

The effects of total dose irradiation on

the breakdown voltage of p—channel power

metal oxide- semi conductor field-effect

transistors (MOSFETs) are examined*

Although breakdown voltage for p-channel

devices increased at higher dose levels, as expected, some devices exhibited an initial decrease in breakdown at very

low levels of total dose* The interaction of ionizing radiation effects with

the junction termination methods designed to increase the voltage at which

breakdown occurs is analyzed*
Page 4 CEEE Technical Publication Announcements - August 87

Radiation Effects , cont'd.

[Contact: Thomas J. Russell, (301)

975-2973]

Russell, ToJ* , Bennett, H®S«, Gaitan,

Me, Suehle, J«S., and Roitman, P«

,

Correlation Between CMOS Transistor and

Capacitor Measurements of Interface

Trap Spectra, IEEE Transactions on

Nuclear Science, Vol, NS- 33, No* 6, pp.

1228-1233 (December 1986).

The radiation- induced change in the

energy spectra of SiO^-Si interface

traps as determined using 1 ) the chargepumping and weak-inversion techniques on

compound metal oxide-semiconductor

(CMOS) transistors and 2) using the

quasi-static capacitance voltage and

detailed model techniques on CMOS ca- pacitors are conpared* The interface

trap spectra determined from these measurements are in good quantitative

agreement over most of the band gap for

the range of densities of traps approximately 10^^ to 10^2 cm- ^ eV-1.

[Contact: Thomas J. Russell, (301)

975-2073]

Singh, G. , Galloway, K.F., and Russell,

T.J., Radiation- Induced Interface

Traps in Power MOSFETs, IEEE Transactions on Nuclear Science, Vol. NS- 33,

No. 6, pp. 1454-1459 (December 1986).

Methods for estimating values of radiation-induced interface trapped charge

from the current-voltage (I-V) characteristics of metal oxide- semi conductor

field-effect transistors (MOSFETs) are

descrioed and applied to commercially

available power MOSFETs. The power

MOSFETS show severe degradation on radiation exposure with the effects of positive oxide trapped charge dominating;

however, interface trap buildup is significant. The results are compared to

experimental measurements available on

other technologies.

[Contact: Thomas J. Russell, (301)

975-2073]

Other Semiconductor Topics

Larrabee, R.D. , and Bell, M.I., Nondestructive Evaluation Activities in

the Semiconductor Materials and Processes

c ember

Division,

1986) . NBSIR 86-3495 (DeThis is the first of an anticipated

yearly report of the nondes true tive evaluation and measurement development

activities currently in progress, in the

Semiconductor Materials and Processes

Division of the National Bureau of Standards. Present activities include production and certification of standard

reference materials for resistivity and

optical measurement of linewidths on

transparent photomasks; orchestrating

round robins for ellipsometric layer

thickness, deep-level characterization,

and spreading resistance; developing new

techniques for optical deep-level spectroscopy, profiling resistivity, and

recombination lifetime in ingots of very

high resistivity silicon; for measuring

oxygen in silicon by infrared absorption; for characterizing compound semiconductor wafers by optical and x-ray

techniques; and for- extending the photomask linewidth work to thicker lines on

silicon substrates.

[Contact: Robert D. Larrabee, (301)

975-2298]

Novotny, D.B., Measurement of the

Separation Distance in Contact and

Proximity Lithography, Journal of the

Electrochemical Society, Vol. 1 33, pp.

2600-2605 (December 1986).

A method is presented for measuring the

separation distance between the substrate surface and the mask surface in

contact and proximity optical lithography. This method utilizes the analysis of the Fresnel diffraction pattern

produced by a slit aperture in the mask

and physically replicated in the photoresist. From the analysis, the image

distance producing the observed Fresnel

diffraction pattern is obtained and is

used to calculate the separation distance. The conditions for the application of this method are presented and an

easy method for computer-generation of
CEEE Technical Publication Announcements - August 87 Page 5 Other Semiconductor Topics y cont'd.

the Fresnel diffraction patterns is

described* A simplified method for

estimating the separation distance from

the number of diffraction pattern peaks

and valleys is also given* Results are

presented showing that a finite separation distance may exist in hard "contact" lithography and that this measurement method is applicable from distances

from near zero to 20 or more micrometers*

[Contact: Donald B* Novotny, (301)

975-2699]

Stern, E*A*, tto, Y* and Bouldin, C*E*

Answer to Comment by M.A. Marcus

Concerning "Local Structure at Mn Sites

in Icosahedral Mn-Al Quasicrystals",

Physical Review Letters, Vol* 57, No*

13, p* 1659 (September 29, 1986)*

A response is given to M*A* Marcus who

raised questions about the data analysis

leading to conclusions that EXAFS data

of Stern et al* support a model involving two Mn sites, one of which is like

that in u-Al^Mn* The response shewed

that the results are consistent with the

data and analysis presented in the

paper*

[Contact: Charles E* Bouldin, (301)

975-2046]

Wunder, S*L* , Bell, M*I*, and Zerbi, G* , Band Broadening of CH2 Vibrations in

the Ramcui Spectra ox Polymethylene

Chains, Journal of Chemical Physics,

Vol* 85, NO* 7, pp. 3827-3839 (1 October 1 986)

The isotropic and anisotropic linewidths

of methylene viorations in a homologous

series of alkanes of increasing chain

length have been measured in the liquid

state as a function of temperature* The

bandwidths of the CH2 symmetric

stretching modes, which are in Fermi

resonance with overtones of the CH

2 bending viorations, are temperature

insensitive over a 200-K interval, ex- plained in terms of a vibrational dephasing mechanism (inhomogeneous broadening) for these modes* In contrast,

for the bending and antisynmetric vibrations, significant band broadening oc- curs over this same temperature interval* In addition, for these modes, both

the absolute value of the bandwidth and

the relative rate of increase of the

bandwidth with increasing temperature

decrease with increasing chain length*

These observations are consistent with a reorientational broadening mechanism as the principal bandwidth contribution for

these vibrations* Hindered end-over-end

rotation of the molecules , which con- tributes to the band broadening for very

lew molecular weight alkanes, rapidly

becomes too slow to be observable on the

time scale of the Raman experiment for

the higher molecular weight alkanes and

polyethylene* For longer chain lengths,

torsional backbone motions coupled to

the high frequency antisymmetric

stretching modes can account for the

breadth of the bands*

[Contact: Michael I* Bell, (301) 975-

2081]

FAST SIGHAL ACQUISITION, PROCESSING,

AMD TRANSMISSION

Waveform Metrology

Kanada, T* , and Franzen, D*L* , Optical

Waveform Measurement by Optical Sampling with a Mode-Locked Laser Diode,

Optics Letters, Vol* 11, No* 1, pp.

4-6 (January 1986)*

Optical pulses from a GaAlAs laser diode

directly modulated at a frequency f-

(971 MHz) are mixed in a LilO^ crystal

with optical sampling pulses at a frequency of f

Q - 1 0 Hz from a mode- locked

GaAlAs laser diode* The optical signal

obtained by sum-frequency mixing in the

crystal is observed with a photomultiplier and an oscilloscope* The original

pulse waveform is reproduced clearly

with a temporal resolution equal to the

mode-locked laser-diode pulse width and

at a repetition frequency of 10 Hz*

Similar results are obtained with

InGaAsP laser diodes at a wavelength of

1*3 ym*
Page 6 CEEE Technical Publication Announcements - August 87

Waveform Metrology , cont'd,

[Contact: Douglas L. Franzen, (303)

497-3346 or -5342]

Cryoelectronic Metrology

McDonald, D.G., Modeling a VoltageLocked Jose^ison Junction Array Amplifier: Gain, Input Impedance, and Bandwidth, Journal of Applied Physics,

Vol. 60, No. 9, pp. 3247-3257 (November

1, 1986).

Previously published experimental re- sults are used to deduce an equivalent

circuit tor this amplifier, based on the

shunted junction model. It is found

that the very small inductances of the

junction shunt resistors play an important role in determining the shape of

tne current-voltage curves in the voltage-locked region. Once the circuit is

determined using the shunted junction

model, a combination of an approximation

method (the method of slowing varying

amplitudes) and the shunted junction

model is used to approximately maximize

the power gain of the circuit. The

maximum gain achieved in these simulations of the two-junction amplifier is

11.3. This gain occurred with a negative resistance input impedance of

-0.41R and a signal source impedance of

0.167R, where R is the junction shunt

resistance. It is estimated that the

bandwidth of this amplifier is about

1 GHz.

[Contact: Donald G. McDonald, (3 03)

497-51 1 3]

Laser Metrology

Johnson, E.G. , Direct Measurement of

the Spatial Modes of a Laser Pulse - Theory, Journal of Applied Optics,

Vol. 25, No. 17, pp. 2967-2975 (September 1 986)

.

We make an electric-f ield measuring

apparatus by using optical processing,

tapered optical fibers, and a pair of

detectors at the end of each optical

fiber. Using an appropriate computergenerated hologram (CGH), we show it is

possible to discriminate among a set of

orthonormal modes used to represent the

spatial features of the electric field

with a signal- to-noise ratio of at least

1 00 to 1 . The tapered fiber is a mode

filter that is used in the transform

plane of the CGH. This fiber allows

precise determination of the strength of

each of the orthonormal modes being used

as the spatial basis of the electric

field before the optical processing.

[Contact: Eric G. Johnson, (303)

497-3234]

Microwave and Millimeter-Wave Metrology

Hoer, C.A., On-Line Accuracy Assessment for the Dual Six-Port ANA: Treatment of Systematic Errors, CP EM

(Conference in Precision Electrical

Measurements) Digest, NBS Gaithersburg,

MD, June 23-27, 1986, R.F. Dziuba, ed.

,

pp. 238-239 [abbreviated version] ; [complete paper to be published in a special issue of IEEE Transactions on

Instrumentation and Measurement] . Expressions are derived for calculating

systematic errors in dual six- port or four-port measurements of reflection

coefficient and scattering parameters

due to imperfections in the transmission

line standard used to calibrate the

system. A new mathematical model for a four-port reflactometer makes it easier

to visualize and analyze these errors.

[Contact: Cletus A. Hoer, (303)

497-3703]

Optical Fiber Metrology

Kanda, T. , and Franzen, D.L., SingleMode Fiber Dispersion Measurements

Using Optical Sampling with a ModeLocked Laser Diode, Optical Letters,

Vol. 11, pp. 330-332 (May 1986).

Pulses from a wave length- tunable, modelocked laser diode were measured after

21 km of single-mode fiber propagation

by optical sampling with another modelocked laser diode; a resolution of 0.1

ps/(nm*km) is achieved in this chromatic
CEEE Technical Publication Announcements - August 87 Page 7

Optical Fiber Metrology , cont'd.

dispersion measurement. In another

related experiment, 78-ps-duration

pulses from an ordinary, multi longitudinal-mode laser diode are clearly displayed Oy optical sampling after 36 km

of rider propagation. System bandwidth

increases to approximately 500 GHz km as the laser-diode wavelength is temperat\ire tuned through the zero-dispersion

region.

[Contact; Douglas L. Franzen, (303)

497-3346 or -5342]

Yang, S., and Gallawa, R.L., Fiber

Bandwidth Measurement Using Pulse

Spectrum Analysis, Applied Optics,

Vol. 25, No. 7, pp. 1069-1071 (April

1 986) . The pulse spectrum analysis method (PSA)

of measuring fiber bandwidth has been

suggested as an alternative to the frequency- and time-domain methods, but

there is a paucity of information on the

technique and very little data. In

fact, we know of no prior measurement

comparisons between the PSA method and

frequency- and time-domain methods.

This paper gives resiiLts of an ejqieriment whicn compared the three methods.

The PSA method has the advantage of

being very simple and gives results that

are consistent with the other two methods. The International Electrotechnical

Commission recommends the PSA method,

but the Electronics Industries Association of the U.S.A. takes no position in

this regard.

[Contact; Robert L. Gallawa, (303)

497-3761 )]

ELBCTRICAL SYSTEMS

Power Systems Metrology

Mehta, S.P. , and Petersons, 0., Calibration of Test Systems for Measuring

Poser Losses of Transformers, IEEE

Transactions on Power Delivery, Vol.

PWRD-1, No. 4, pp. 215-223 (October

1 986)

Two years of development wcrk by ASEA

Electric, under the auspices of the

Industrial Research Associate Program of

the National Bureau of Standards, has

resulted in a verifiable method of determining overall accuracy of test systems used in the measuronent of transformer losses. This technical achievement is important to the industry because of the present trend towards lower

power factors which makes loss measurements exceedingly difficult with desirable test system accuracy that is traceable. The technical details of this

work are presented in NBS Technical Note

1 204 (over 1 00-page document) . The

intent of this IEEE paper is to present

the basic principles embodied in the

Technical Note. A calibration system

for accuracy verification and alignment

of test systems is described. Methodologies and data for evaluating accuracy

of test systems are summarized. The

details elaborated upon in this paper

represent a way to determine the accuracy of the overall test system for measuring transformer losses as well as that of the principal components of such

a system.

[Contact; Oskars Petersons, (301

975-2400]

Van Brunt, R.J. , and Sauers, I., Gas

Phase Hydrolysis of SOP2 and SOP , Journal of Chemical Physics, Vol. 85,

No. 8, pp. 4377-4380 (October 15,

1 986

. The rates for gas-phase hydrolysis of

SOF2

( thionylf luoride) and SOFj^ (thionyltetrafluoride) have been measured at

a temperature of 298 K. The second

order rate constant for SOF2 hydrolysis

in SFg buffer gas was found to have the

value (1.2 ± 0.3) x 10”2 3 cm^/s which

agrees with previous estimates of Sauers

et al. , but is three orders of magnitude

lower than the value obtained by

Ruegsegger et al. at 340 K. The rate

constant for SOF^ hydrolysis has not

previously been measured, and its value

in both SF^ and N2 buffer gases was found here to be (1.0 ± 0.3) x 10“2 1 cm^/s

[Contact; Richard J. Van Brunt, (301)

975-2425]
Page 8 CEEE Technical Publication Announcements - August 87

Superconduc tors

Dragomirecky, M., Minervini, J.V. , Ekin,

J.W., Goldfarb, R.B., and Clark, A»Fe,

Losses in a Nb-Ti Superconductor as Functions of AC Field Amplitude and DC

Transport Current, Proceedings of the

11th International Cryogenic Engineering Conference - ICEC 11, Berlin, West

Germany, April 22-25, 1986 (Butterworth

& Co. Ltd., Publishers), pp. 746-750.

Hysteretic shielding losses and transport losses were measured in a multifilamentary Nb-Ti superconducting coil

as functions of transverse ac field

amplitude and dc transport current. The

conductor was biased with a dc field.

There was significant agreement with the

predictions of Minervini* s two-dimensional theoretical model.

[Contact: John W. Ekin, (303)

497-5448]

Ekin, J.We, High-Field Flux Pinning

and the Strain Scaling Law, Proceedings of the International Symposium on

Flux Pinning and Electromagnetic Properties in Superconductors, Fukuoka,

Japan, November 11-15, 1985, pp. 267-

271

«

The effects of strain on flux pinning in

superconductors are discussed. Significant aifferences between the strain

scaling law, temperature scaling law,

and the flux- line-shearing model of

Kramer are demonstrated. Ihe strain

scaling law is more general than current

flux-pinning models, and as such, it may

serve as a guide to future work on flux

pinning theory. Flux-pinning measurements at fields up to 24 T have been

made on a series of high-quality Nb^Sn

samples with third (and fourth) element

auditions. Ihe data show that the usual

extrapolation procedures for determining

the bulk-average upper critical field in

Nb^Sn lead to significant errors when

additives such as Ti, Ta, Ga, and Hf are

present.

[Contact: John W. Ekin, (303) 497-5448]

and Capobianco, T.E.

,

Relationships Between Mechanicatl and

Magnetoelectric Properties of OxygenFree Copper at 4 K, Advances in Cryogenic Engineering (Materials) , Vol. 32,

(Plenum Press, New York, NY, 1986), pp.

421-427.

Commercially pure, oxygen-free copper is

the material of choice for nearly all

superconductor stabilization. Straining

relatively pure copper at 4 K can result

in significant increases in the residual

resistivity and, thus, a decreased ability of the copper to stabilize the

superconductor. In this paper, we quantify the effect of strain on the resistivity and magnetoresistivity of a large

number of oxygen-free coppers from various sources and in various tempers. In

addition, the lew-temperature stressstrain behavior of these materials and

its correlation with room temperature

data and the residual resistivity ratio

prior to straining is discussed. An

apparatus developed for mechanical properties testing of relatively small wire

samples at low temperature is described.

[Contact: Frederick R. Fickett, (303)

497-3785]

Goldfarb, R.B., and Clark, A.F., AC

Losses in Nb-Tl Measured by Magnetization and Complex Susceptibility,

Advances in Cryogenic Engineering

(Materials), Vol. 32 (Plenum Press, New

York, NY, 1986), pp. 779-786.

DC magnetization and complex ac susceptibility were measured at 4 K as functions of longitudinal dc field for a multi filamentary Nb-Ti superconductor

with no transport current. Minor hysteresis loops were obtained in the dc

measurements. Ihe full-penetration

field Hp, a function of applied field

H, was deduced directly for each minor

loop. The values for Hp were fit to

the Kim-type equation, Hp ( H ) = Hp( 0 ) / ( 1 +H/H]c) , where Hp(0) and

are constants. The minorhysteresis-loop areas gave losses that

were in excellent agreement with Carr* s Fickett, F.R., theoretical critical-state equation, W =
CEEE Technical Publication Announcements - August 87 Page 9

Superconductors , cont'd,

(4u^HqHp/3) (1 -Hp/2Hq)

where Hq is

the maximum applied field for each

loop.

An egression was obtained for the ideal

reversible differential susceptibility,

Xrev = 9q/8 ttuq ( H-Hc 1) , where

is the flux quantum, Ifci is the

lower critical field, and X is the penetration depth. and X for the

sample were deduced from the shape of

the major hysteresis loop. Clem's theoretical e3q>ressions for the real (x')

and imaginary (x”) components of ac susceptibility are functions of ac field

amplitude h, Hp , and Xrev The

predicted susceptibilities based on

these expressions were in good agreement

with measured curves of x' X"

functions of h and H. The measured x'

and x” were independent of frequency up

to 1 kHz, as expected when bulk hysteresis IS the primary loss mechanism.

[Contact: Ronald B. Goldfarb, (3 03)

497-3650]

Goodrich, L.F., Dube, W.P. , Pittman,

E.S., and Clark, A.F., The Effect of

Aspect Ratio on Critical Current in

Multifilamentary Superconductors,

Advances in Cryogenic Engineering

(Materials), Vol. 32 (Plenum Press, New

York, NY, 1986), pp. 833-840.

Experimental data and discussion are

presented on the critical current of

straignt superconductors as a function

of the orientation of a perpendicular

applied magnetic field. Commercial,

multifilamentary NbTi and Nb^Sn samples

were measured in a radial access magnet

that allowed an arbitrary angle setting.

The change in critical current was measured at different magnetic fields to

scale the effect for use in a standard

test method. For a NbTi sample, the

critical current with the magnetic field

parallel to the wider face of the conductor is higher than that with the

perpendicular orientation. The effect

can Pe as high as 40% for a NbTi sample

with an aspect ratio of 6. The effect

in Nb^Sn is opposite that in NbTi. A

discussion of the most likely cause of

the effect, which accounts for the difference between NbTi and Nb^Sn, is

given.

[Contact: Loren F. Goodrich, (303)

497-3143]

ELECTROMAGNETIC INTERFERENCE

Radiated Electromagnetic Interference

Randa, J. , and Kanda, M., A Lattice

Approach to Volumes Irradiated by Unknown Sources, NBS Technical Note

1303 (October 1986).

We suggest an approach to the characterization of electromagnetic environments

irradiated by unknown sources. The

approach is based on the numerical solution of Maxwell's equations subject to

the constraints imposed by the measured

values of the field at a small number of

measurement points and by boundary con- ditions. A thorough’ examination is

presented of two methods for the numerical solution. The examples attempted

demonstrate the approach, but reveal

that neither technique is fully successful. Possible future directions are

suggested.

[A paper based on the contents of this

Technical Note is scheduled for presentation at the Seventh Symposium and

Technical Exhibition on EMC (Zurich,

Switzerland, March 1987) under the title

"A Lattice Approach to Environments

Irradiated by Unknown Sources" and will

appear in the proceedings of that Symposium. A second paper based on this

material has been submitted to the IEEE

Transactions on Electromagnetic Compatibility with the title "A New Approach to

Volumes Irradiated by Unknown Sources.”]

[Contact: James P. Randa, (303)

497-3150]

Conducted Electromagnetic Interference

Key, T.S., and Martzloff, F.D., A

Consensus on Powering and Grounding

Sensitive Electronic Equipment, In-
Page 1

0

CEEE Technical Publication Announcements - August 87

Conducted EMI , conf’d.

dustry Applications Society Annual

Meeting, Denver, Colorado, September

29-Octooer 3, 1986, pp« 1-7o

As sensitive electronic processing systems proliferate in our facilities, so

do power-related proolems. Efforts to

alleviate these problems have ranged

from installing expensive power conditioning equipment to applying special

grounding techniques not found in conventional safe grounding practice.

Understanding of what is actually going

on has been lacking. We find elaborate

power systems, modified from basic practice to the extent of being unsafe, that

continue to be plagued with poweringand grounding-related problems. Out of

this chaos we are persuaded to study and

understand the complexities of the problem and to begin developing good practices. This is the objective of the

IEEE working Group on Powering and

Grounding Sensitive Electronic Equipment, Standards Project P1 100. We will

introduce Project P1 100, preview its

scope and technical content and, most

importantly, invite participation in

this seriously needed consensus standard

activi ty.

[Contact: Francis D. Martzloff, (301)

975-2409]

Martzloff, F.D., Surge Suppressors and

Clamps, Proceedings of EMC EXPO 86,

International Conference on Electromagnetic Compatibility, Washington, DC,

June 16-19, 1986, pp. E01.1-E01.7.

The paper presents a review of technologies developed for surge suppressor

devices used in electronic circuits.

Three generic types are described:

crowoars, varistors, and avalanche diodes. The significant differences in

their performance characteristics are

pointed out, together with guidance on

proper application and measurements.

[Contact: Francois D. Martzloff, (301)

975-2409]

ADDITIONAL INFORMATION

Lists of Publications

Gibson, K. A., Page, J. M., and Miller,

C .K . S . , A Bibllogra^Ay of the NBS

Electromagnetic Fields Division Publications, NBSIR 85-3040 (February

1986)

.

Ihis bibliography lists publications of

the National Bureau of Standards' Electromagnetic Fields Division for the

period from January 1984 through September 1985, with selected earlier publications from the Division's predecessor

organizations.

[Contact: Kathryn A. Gibson, (303)

497-31 32]

Kline, K. E., and DeWeese, M.E., Metrology for Electromagnetic Technology:

A Bibliography of NBS Publications

,

NBSIR 86-3048 (June 1986).

This bibliography lists the publications

of the personnel of the Electromagnetic

Technology Division of NBS in the period

from January 1970 through December 1985.

A few earlier references that are directly related to the present work of

the Division are included.

[Contact: Kathryn E. Kline, (303)

497-3678]

Palla, J. C., and Meiselman, B., Electrical and Electronic Metrology: A

Bibliography of NBS Electrosystems

Division Publications, NBS List of

Publications 94 (January 1987).

This bibliography covers p\iblications of

the Electrosystems Division, Center for

Electronics and Electrical Engineering,

NBS, and of its predecessor sections for

the period January 1963 to January 1987.

A brief description of the Division'

s

technical program is given in the introduction.

[Contact: Jenny C. Palla, (301)

975-2220]

Walters, E.J. , Semiconductor Measurement Technology: A Bibliography of NBS

Publications for the Years 1962-1986,

NBSIR 87-3522 (February 1987).
CEEE Technical Publication Announcements - August 87 Page 1

Lists of Publications y cont'd.

This bibliography contains reports of

work performed at the National Bureau of

Standards in the field of Semiconductor

Measurement Technology in the period

from 1962 through December 1986. An

index by topic area and a list of

authors are provided.

[Contact: E. Jane Walters, (301)

975-2050]

1987 CEEE CALBIDAR

September 14-16 (Research Triangle Park,

NO

VLSI and GaAs Packaging Workshop.

This Workshop is co-sponsored by the

Components, Hybrids, and Manufacturing

Tecnnology Society of IEEE and NBS;

attendees are expected to be knowledgeable in the field and to participate in

discussions. Topic areas include: VLSI

and wafer scale package aesign (characterization and implementation, cost and

performance driven solutions) ; package

thermal design (characteristics, re- sults, and issues); package interconnection options (wire bonding, TAB, flip

nection options (wire bonding, TAB, flip

chip, or optical) ; GaAs IC packaging

(high speed packaging considerations);

package electrical issues (reduction of

parasitics and improvements in electrical performances) ; integrating package

design (from die to system, including

assemoly and test issues); VLSI package

materials advancements; die-attach solutions for large chips; new failure

mechanisms in VLSI packaging. [Contact:

George G. Harman, (301) 975-2097]

September 16-18 (Gaithersburg, MD)

Workshop on the Role of Optical Sensors

in Power Systems ' Voltage and Current

Measurements. Uiis Workshop is sponsored by NBS, the Bonneville Power

Administration (BPA), the Electric Power

Research Institute (EPRI) , and the

Empire State Electric Ehergy Research

Corporation (ESEERC) and is intended for

research and development engineers in

utilities and in companies that supply

equipment to the utility industry. The

objective of this workshop is to identify anticipated opportunities for

improved measurement techniques that

should arise as power systems individually and collectively evolve to meet the

needs of the 1990s. Presentations will

stress the design and testing of* optical

systems for 60-Hz voltage or current

measurement; the interfacing of electronic or optical components with existing metering and control systems; opportunities for new measurement hardware

resulting from increased automated con- trol of power systems and of the testing

of power system components; and optical

techniques for the measurement of electric and magnetic fields in power systems or system components. The results

of an NBS study evaluating optical techniques for power-system electrical measurements and carried out in agreement

with BPA, EPRI, and ESEERC will be presented as an invited keynote. [Contact:

Raymond S. Turgel, (301) 975-2420 or

Robert E. Hebner, (301) 975-2403]

September 22-25 (Boulder, CO)

Noise Measurement Seminar. This fourday course is presented and hosted by

the Electromagnetic Fields Division in

cooperation with representatives from

industry and the NBS Time and Frequency

Division. It is intended for practicing

noise metrologists and technical managers responsible for systems in which

accurate measurements of thermal and

phase noise are important. Attendees

will learn the most important precautions to take in making accurate noise

measurements and will receive a set of

notes that are suitable for use in solving precision noise measurement problems. Course topics include reference

thermal noise sources; thermal noise

measuring systems and techniques; phase

noise; and the problems of measuring

thermal noise in passive components,

amplifiers, and communication systems.

The course design combines formal lectures on theory presented by NBS staff
Page 1

2

CEEE Technical Publication Announcements - August 87

1 987 CEEE Calendar , cont'd.

and industry experts with demonstrations

in NBS laboratories and demonstrations

of commercial equipment* A special

feature of the Seminar is the opportunity each day for attendees to share

their experiences in solving specific

problems or their insights on practical

noise measurement issues through short

presentations to the assembled group*

Time is scheduled for group discussions

of these presentations and other topics

raised by the Seminar* [Contact:

Sunchana Perera (303) 497-3546]

October 26-28 (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers (Nineteenth Boulder

Damage Symposium)* This Symposium is

cospxDnsored by the National Bureau of

Stanaards, the American Society for

Testing and mterials, the Air Fbrce

Office of Scientific Research, the Office of .Naval Research, and the Defense

Advanced Research Projects Agency and

constitutes a principal forum for the

exchange of information on the physics

and technology of materials for highpower lasers*

Topics to be discussed include new materials, oulK damage phenomena, surface

and thin-film damage, design considerations for high-power systems, and fundamental mechanisms of laser-induced

damage* Proceedings of the Symposium

will oe published (Note; The collection

of Symposium proceedings contains information on optics for all aspects of

high-power/high-energy lasers, including

environmental degradation, durability,

f aorication, material growth and deposition processes, and testing) ® [Contact;

Susie A* Rivera (303) 497-5342]

December 10-11 (Gaithersburg, MD)

Power Semiconductor Devices Workshop*

This Workshop, sponsored jointly by IEEE

and NBS, is intended to bring together

for interactive participation those

actively working in the field of power

semiconductor devices* It will be held

in conjunction with the 1987 IEEE International Electron Devices Meeting in

Washington, DC. Four specific topic

areas have been selected, based on the

response to a questionnaire sent to over

niques for the measurement of electric

and magnetic fields in power systems or system components* The results of an

NBS study evaluating optical techniques

for power- system electrical measurements

and carried out in agreement with BPA,

EPRI, and ESEERC will be presented as an

invited keynote* [Contact; Robert E*

Hebner, (301) 975-2403]

1988 CEEE Calendar

February 10-12 (San Diego, CA)

IEEE Semiconductor Thermal and Temperature Measurement Symposium* This

fourth annual SEMI-THERM symposium

is sponsored by the Components, Hybrids,

and Manufacturing technology Society of

IEEE in cooperation with NBS and constitutes an international forum for the

presentation of new developments in, and

applications relating to, generation and

removal of heat within semiconductor

devices and measurement of junction

temperatures experienced in various

applications and environments. Major

SEMI-THERM topic areas include thermal

measurements, thermal characterization,

applications, and computation and software*

The program includes keynote speakers,

technical presentations, tutorial ses- sions, workshops, and an exhibit* In

addition, the Semiconductor Equipment

and Materials Institute has scheduled in

conjunction with SEMI-THERM a meeting of

its Thermal Measurements Task Force, to

which attendees are invited* [Contact;

Frank F* Oettinger, (301) 975-2054]

May 11-13 (Los Angeles, CA)

Intersociety Conference on Thermal

Phenomena in Fabrication and Operation

of Electronic Components* This Conference is sponsored by the Components,
CEEE Technical Publication Announcements - August 87 Page 1

1988 CEEE Calendar , cont'd.

Hybrids, and Manufacturing Technology

Society of the IEEE, in cooperation with

ASME Committee K-16 on Heat Transfer and

NBS. It is intended to provide an

interdisciplinary forum for ej^loring

the progress made in understanding,

analyzing, and modeling thermal transport processes and thermally induced

failures in the fabrication, assembly,

and use of logic, memory, and datastorage systems. Major topic areas

covered are 1) processing and fabrication, including state-of-the-art semiconductor crystal growing techniques;

thermal stress in wafers, chips, substrates, PC boards, and joints; and

encapsulant behavior with respect to

solidification, outgassing, mechanical

properties, and water vapor diffusion

and absorption; 2) packaging technology,

including means for cooling components

from cryogenic to high temperatures and

reliability as affected by failure

mechanisms such as dopant migration and

intermetallic growth; and 3) peripheral

equipnent, including data storage in

both magnetic and optical media and

thermal issues in dot-matrix and thermal

printer heads. The conference is being

held in conjunction with the Electronics

Components Conference (May 9-11) at the

same site. [Contact; Frank F. Oettinger, (301) 975-2054]

Planned

Early summer (Vail, CO)

Combined Short Course on Optical Fiber

and Laser Measurements. [Contact:

Aaron A. Sanders, (303) 497-5341]

Early fall (Boulder, CO)

Fiber Optics Symposium. [Contact;

Aaron A. Sanders, (303) 497-5341]

Late fall (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers (20th Boulder Damage

Symposium). [Contact; Aaron A.

Sanders, (303) 497-5341]

CEEE SPOHSORS

National Bureau of Standards

Department of Defense

Defense Nuclear Agency; National

Security Agency; Combined

Army/Navy/Air Force Calibration

Coordination Group

U.S. Air Force

Hanscom Air Force Base; Newark Air

Force Station; Space & Missile

Organization; Wright-Patterson Air

Force Base

U.S. Army

Fort Belvoir; Fort Monmouth; Harry

Diamond Laboratories; Redstone

Arsenal

U.S. Navy

Naval Surface Weapons Center;

Weapons Support Center/Crane; Office

of Naval Research; Naval Air

Engineering Center

Department of Energy

Energy Systems Research; Fusion

Energy; High Energy & Nuclear

Physics; Bonneville Power

Mministration

Department of Justice

Law Enforcement Assistance

Administration

Department of Treasury

Bureau of Engraving and Printing

Department of Transportation

National Highway Traffic Safety

The Charles Stark Draper Laboratory

Sandia National Laboratories
MBS.TT4A (REV. 2 -ac) U.S. DEPT. OF COMM.

BIBLIOGRAPHIC DATA

SHEET (See instructions)

1. PUBLICATION OR

REPORT NO.

2. Performing Organ. Report No. 3. Publication Date

August 1987

4. TITLE AND SUBTITLE

Center for Electronics and Electrical Engineering Technical Publication Announcements

Covering Center Programs, October-Dec ember 1986, with 1987 CEEE Events Calendar

5. AUTHOR(S)

E. Jane Walters, compiler

6. PERFORMING ORGANIZATION (If joint or other than NBS, see instructions)

NATIONAL BUREAU OF STANDARDS

U.S. DEPARTMENT OF COMMERCE

GAITHERSBURG, MD 20899

7. Contract/Grant No.

t. Type of Report & Period Covered

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street, City, State, ZIP)

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

10. SUPPLEMENTARY NOTES

All technical information included in this document has been previously approved for

publication.

I I Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bibliography or literature survey, mention it here)

This is the eleventh issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. This issue of the Center for Electronics and Electrical

Engineering Technical Publication Announcements covers the fourth quarter of

calendar year 1986. Abstracts are provided by technical area for papers published

this quarter.

12. KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolons)

antennas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers; semiconductors? superconductors

13, AVAILABILITY

I Xl Unlimited

I I For Official Distribution. Do Not Release to NTIS

I I Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C.

20402.

[25 Order From National Technical Information Service (NTIS), Springfield, VA. 22161

14. NO. OF

PRINTED PAGES

15. Price

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U.S DEPARTMENT OF COMMERCE

NATIONAL BUREAU OF STANDARDS

GAITHERSBURG. MO 20899

RETURN POSTAGE GUARANTEED

OFnOAL BUSINESS

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BULK RATE

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KEY CONTACTS; Center Headquarters (720) Director, Mr. Judton C. French (301) 975-2220

Deputy Director, Mr. Robert I. Scace (301) 975-2220

Electrosystems Division (722) Chief, Dr. Oskars Petersons (301) 975-2400

Electromagnetic Fields Division (723) Chief, Dr. Ramon C. Baird (303) 497-3131

Electromagnetic Technology Division (724) Chief, Dr. Robert A. Kamper (303) 497-3535

Semiconductor Electronics Division (727) Chief, Mr. Frank F. Oettinger (301) 975-2054

INFORMATION;

For additional information on the Center for Electronics and Electrical Engineering, write or call:

Center for Electronics and Electrical Engineering

National Bureau of Standards

Metrology Building, Room B-358

Gaithersburg, MD 20899

Telephone (301) 975-2220