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NBSlR 84-2877-1

CENTER FDR ELECTRONICS HMD

Electrxcrl Engineering

Technical Progress Bulletin

US. DEPARTMENT OF COMMERCE

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

Gaithersburg, Maryland 20899

Covering Center Programs, January - March 1984

with 1984 CEEE Events Calendar

May 1984

QC ' I S. DEPARTMENT OF COMMERCE

100

. U56

34-2377-

1934

JATIONAL BUREAU OF STANDARDS
INTRODUCTION TO MAY 1984 ISSUE OF THE CEEE TECHNICAL PROGRESS BULLETIN

This is the sixth issue of a quarterly abstract journal covering the work of the

National Rureau of Standards Center for Electronics and Electrical Engineering. This

issue of the CEEE Technical Progress Bulletin covers the first quarter of calendar

year 1984.

Organization of Bulletin : This issue contains abstracts for all papers released for

publication by NBS in the quarter and citations and abstracts for papers published in

the quarter. Entries are arranged by technical topic as identified in the table of

contents and alphabetically by first author under each subheading within each topic.

Unpublished papers appear under the subheading "Released for Publication". Papers

published in the quarter appear under the subheading "Recently Published". Following

each abstract is the telephone number of the individual to contact for more information on the topic; unless otherwise noted, this person is the first author.

This issue also includes a calendar of Center conferences and workshops for the

remainder of calendar year 1984, an announcement of newly released standard reference

materials, and a list of sponsors of the work.

Center for Electronics and Electrical Engineering : Center programs provide national

reference standards, measurement methods, supporting theory and data, and

traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U. S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor

Technology Program, carried out by the Semiconductor Materials and Processes and

Semiconductor Devices and Circuits Divisions in Gaithersburg, MD, and the Signals and

Systems Metrology Program, carried out by the Electrosystems Division in Gaithersburg

and the Electromagnetic Fields and Electromagnetic Technology Divisions in Boulder,

CO. Key contacts in the Center are given on the back cover; readers are encouraged

to contact any of these individuals for further information.

Center sponsors : The Center Programs are sponsored by the National Bureau of

Standards and a number of other organizations, in both the Federal and private

sectors; these are identified on page 16.

Note on Publication Lists : Guides to earlier as well as recent work are the

publication lists covering the work of each division. These lists are revised and

reissued on an approximately annual basis and are available from the originating

division [publications from the Semiconductor Technology Program are covered in a single list, available from either Semiconductor Division].
or Si.r..;r>A:'iDS >_ Lir-EARY , T24-

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CFEE Technical Progress Bulletin - May 84 _i ~ & Page 1 —

TABLE OF CONTENTS

INTRODUCTION inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM

Si 1 i con Materi al s Integrated Circuit Test Structures 3

Process A Device Modeling 5 Power Devices 6

Packaging 6

Other Semiconductor Metrology 6

SIGNALS AND SYSTEMS METROLOGY PROGRAM

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 6

Waveform Metrology 6

Cryoelectronic Metrology

Antenna Metrology

Noise Metrology 8

Optical Fiber Metrology 8

Other Fast Signal Topics 9

ELECTRICAL SYSTEMS 9

Power Systems Metrology 9

Magnetic Materials and Measurements 11

Superconductors 12

Other Electrical Systems Topics 13

ELECTROMAGNETIC INTERFERENCE 13

CEEE CALENDAR 15

NEW STANDARD REFERENCE MATERIALS 16

SPONSOR LIST ‘ 16

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 2 CEEE Technical Progress Bulletin - May 84

SEMICONDUCTOR TECHNOLOGY PROGRAM

Silicon Materials

Released for Publication

Baghdadi, A., The Effects of

Instrumental Artifacts on the

Quantitative Determination In Silicon

by FTIR, to be published in

Semiconductor Processing, ASTM Special

Technical Publication 850, ASTM 1916

Race Street, Philadelphia, PA 19103

[paper given at Silicon Processing

Symposium, San Jose, CA, February 6-9,

1984].

The evolution of silicon processing

technologies towards greater reliance on internal gettering by oxygen precipitates has led to the need for greater

precision in the measurement of the

interstitial oxygen content of silicon

slices. This measurement is presently

being carried out with the use of

Fourier Transform Infrared (FTIR) spectrophotometers. This paper concerns the

investigation of the effects of changing

the apodization function and beam geometry on the quantitative determination of

oxygen in silicon by FTIR. The apodization functions used include boxcar,

cosine, Happ-Genzel, and triangular

functions. The beam geometry is varied

by placing apertures between the interferometer and the silicon specimen. The

effects of beam polarization and detector nonlinearity were also investigated.

[(301) 921-3625]

Ehrstein, J.R., Downing, R.G., Stallard,

B.R., Simons, D.S., and Fleming, R.F.,

Comparison Depth Profiling of 10 B in

Silicon Using Spreading Resistance Profiling. Secondary Ion Mass

Spectrometry, and Neutron Depth

Profiling, to be published in

Semiconductor Processing, ASTM Special

Technical Publication 850, ASTM, 1916

Race Street, Philadelphia, PA 19103

[paper given at Silicon Processing

Symposium, San Jose, CA, February 6-9,

1984].

Depth profiling of intentional dopants

is an important measurement in the semiconductor industry both for process and

device modeling and for process control.

A comparison of 10 B implants into sili- con as measured by spreading resistance

profiling, secondary ion mass spectrometry, and by neutron depth profiling is

presented. The boron implantations were done at several fluences and energies

into bare silicon and through several

thicknesses of thermally grown oxides.

Sources of error and their relation to

observed differences among the

techniques are discussed.

[(301) 921-3625]

Thurber, W.R. and Lowney, J.R., Electrical Transport Properties of

Silicon, to be published in book,

VLSI Handbook, Academic Press, 111

Fifth Avenue, New York, NY 10003.

This short review of the electrical

transport properties of silicon was written as a chapter for a VLSI handbook. The titles of the seven sections

are: (1) Definition of Transport,

Transport Equation; (2) Conversion Between Resistivity and Dopant Density;

(3) Mobility of Charge Carriers; (4)

Temperature Dependence of Resistivity

and Mobility; (5) Dependence of Drift

Velocity on Electric Field; (6)

Minority-Carrier Mobility, Lifetime, and

Diffusion Length; and (7) Mobility in an M0S Inversion Layer. The chapter includes five tables, seven figures, and

35 references.

[(301) 921-3625]

Thurber, W.R., Lowney, J.R., and

Phillips, W.E., Measurement

Techniques for High Power Semiconductor

Materials and Devices: Annual Report,

January 1, 1982 to March 31, 1983,

to be published as NBSIR 84-2838.

This annual report is the final one in a series which describes NBS research to

develop procedures for the effective

utilization of deep-level measurements

to detect and characterize defects which

reduce lifetime or contribute to leakage
CEEE Technical Progress Bulletin - May 84 Page 3

Silicon Materials , cont'd.

current in power-device-grade silicon.

During this reporting period, the previously written computer program for

predicting excess-carrier lifetime was revised to calculate more accurately

lifetimes for high or low injection

conditions and in space-charge regions.

Comparisons were made between lifetime

measurements on platinum-doped silicon

diodes and the predictions of the com- puter model. As part of the effort to

extend the procedures to analyze data

from nonexponential transient capacitance measurements, the time dependence

of the capacitance-voltage relationship

of a heavily platinum-doped silicon

diode was measured as a function of bias

voltage. Included as appendices are three recent publications resulting from

the work. A listing of the lifetimepredicting computer program is also an appendix.

[(301) 921-3625]

Recently Published

Lowney, J.R. and Thurber, W.R., Evidence of Band-Gap Narrowing In the

Space-Charge Layer of Heavily Doped

Silicon Diodes, Electronics Letters

20, No. 3, pp. 142-143 (February 1984).

The gradient voltage has been measured

for seven heavily doped, graded-junction

silicon diodes at 300 K. Experimental

values up to nearly 0.5 V lower than

theoretical predictions have been observed. The lowering is attributed to

band-gap narrowing in the space-charge

region. This narrowing is expected to

be much larger than in neutral material

of the same doping density because of

the absence of free-carrier screening.

[(301) 921-3786]

Forman, R.A., Bell, M.I., Mayo, S., and

Kahn, A.H., Effect of Spatial

Averaging on the Compositional Analysis

of Crystals by Absorption Spectroscopy,

J. Applied Physics, 55, No. 2, pp.

547-554 (January 1984).

Calculations of optical absorption based

on a model of a single crystal containing spatially periodic compositional

variations are presented. These variations can contribute a significant

source of systematic error in the analysis of composition by optical or surface

techniques. The model is most appropriate for melt-grown crystals, in particular for striated semiconductor crystals, and the surface concentration

profile which it predicts is confirmed

by comparison with a published x-ray

topographic study of silicon. Implications of the results for optical absorption studies of impurities in silicon

crystals are discussed, and it is shown

that significant measurement errors may

occur.

[(301) 921-3625]

Integrated Circuit Test Structures

Released for Publication

Mazer, J.A., Linholm, L.W., and Saxena,

A.N., An Improved Test Structure and

Kelvln-Measurement Method for the Deter

ml nation of Integrated Circuit Front

Contact Resistance.

The use of an improved microelectronic

test structure and associated Kelvin

measurement method for determining front

contact resistance (circuit-loading

resistance) of a metal/semiconductor

ohmic contact Is described. The values

of front contact resistance for aluminum/silicon contacts are determined

using this Kelvin-cross structure and are compared with values determined by a two-terminal contact chain method and

with values determined by a Kelvin voltage divider method. The values of front

contact resistance using the Kelvin- cross structure and associated measurement method are shown to be less sensitive to photolithographic process

variations and electrical measurement

errors than those determined using the

other two structures and measurement

methods.

[(301) 921-3621]
Page 4 CEEE Technical Progress Bulletin - May 84

Integrated Circuit Test Struc . , cont ' d

Roenker, K.P. and Linholm, L.W., An

NMOS Test Chip for a Course in Semiconductor Parameter Measurements, to be

published as NBSIR 84-2822.

This report describes an NMOS test chip,

NBS-40, which was developed to be used

in graduate level electronics engineering courses involving semiconductor

parameter measurements associated with

the fabrication of integrated circuits.

The 35 test structures included in the

test chip and their use in materials,

device, and process parameter measurements are described. Details of the

silicon gate NMOS process used in the

chip fabrication are also provided.

[Contact: Linholm, (301) 921-3541]

Recently Published

Cassard, J.M., A Sensitivity Analysis

of SPICE Parameters Using an ElevenStage Ring Oscillator, IEEE Trans.

Electron Devices, ED-31, pp. 264-269

and IEEE J. Solid State Circuits, SC19, pp. 130-135 (February 1984).

SPICE is a circuit simulator which predicts node voltages and currents as a function of time from device model

parameters. Model parameters are determined by the manufacturing process.

Process-induced variations in these

parameters occur within a chip or from

chip to chip and cause corresponding

variations in circuit performance.

Values for the model parameters used in

simulators are usually obtained from

measurements on test structures which

are found along the periphery of the

circuit or in test chips located at

several sites on the product wafer.

Because of the spatial separation between test structures and the circuits

of interest, differences between mea- sured and simulated performance can occur. This paper presents examples of

how well model parameters extracted from

a test chip can predict the ac response

of a dynamic circuit element on the same wafer. Simulation results show which

model parameters are critical to performance. A comparison between measurement and simulation results is given and

the importance of intra-chip and intrawafer parameter variations is discussed.

For the samples tested, the polysilicon

gate linewidth variation was determined

to be the primary cause of the ring

oscillator frequency variation.

[(301) 921-3621]

Suehle, J.S., Linholm, L.W., and

Kafadar, K. , Minimum Test Chip Sample

Size Selection for Characterizing Pro- cess Parameters, IEEE Trans. Electron

Devices, ED-31, pp. 257-264 and IEEE J.

Solid State Circuits, SC-19, pp. 122-

129 (February 1984).

A method for determining a test chip

sample size to estimate effectively the

electrical parameter distributions on an integrated circuit wafer is presented.

This method gives relations among sample

size and the figure of merit for four

statistical techniques (trimmed mean,

biweighted mean, median, and arithmetic

mean) by which estimates are calculated.

To demonstrate the use of this method,

it has been applied to the evaluation of

a CMOS fabrication process. Measurements on wafers completely patterned

with identical test chips were used to

determine actual parameter distributions

for an entire wafer (true parameter

values). Estimates of true parameters were determined using a site selection

plan which is representative of sampling

plans employed in industry. The above

four statistical techniques were used to

compute estimates for electrical parameters and their respective figures of

merit. These estimates were compared

with the true parameter values determined from testing all test chips on the

wafer. When this method is used in

conjunction with other criteria for test

chip sample size, it enables judgments

to be made on the effectiveness of sam- pling strategies for various processes

and process technologies. The results,

reported in this paper for CMOS processes, are interpreted for the case when only criteria concerning the slope
CEEE Technical Progress Bulletin - May 84 Page 5

Integrated Circuit Test Struc ., cont'd.

of the figure of merit with the sample

size are considered.

[(301) 921-3621]

Yen, D. and Linholm, L.W., Using

Llnewidth Measurement Test Structures

to Evaluate Lithographic Processes and

Equipment, Test & Measurement World,

4, No. 3, pp. 48-61 (March 1984).

Test structures included on the wafer

during semiconductor fabrication can help the process engineer evaluate semiconductor materials, process control and

process equipment. One of the most

important test methods used is the mea- surement of linewidth. In many cases,

the results from electrical measurements

on a cross-bridge sheet resistor can be

used to determine the electrical linewidth of a conducting layer. Test chips

that contain arrays of identical cross bridges can also help determine the

uniformity of a lithographic process.

[(301) 921-3621]

Process & Device Modeling

Released for Publication

Albers, J., Wilson, C.L., and Blue,

J.L., The Effect of Bevel Angle and

Number of Points on Spreading

Resistance Data Analysis, to be

published in Extended Abstracts of the

Electrochemical Society [paper to be

given at Society conference. New

Orleans, LA, October 7-12, 1984].

The semiconductor equations are used to

obtain the carrier profile along a beveled structure. The spreading resistance is calculated on a scale much

finer than the present experimental

resolution of the technique. Spreading

resistance algorithms are used on data

spaced at the present experimental reso- lution. The difference between atomic

and carrier densities along the bevel

and the errors inherent in finite-layer

algorithms are investigated. This is

meant to provide insight into limitations of spreading resistance due to

these sources.

[(301) 921-3621]

Recently Published

Albers, J. and Berkowitz, H.L., The

Relation Between Two- Probe and FourProbe Resistances on Nonuniform Structures, J. Electrochemical Society,

131, No. 2, pp. 392-398 (February

1984).

A general relation between the two-probe

resistance (spreading resistance) and

the four-probe resistance on nonuniform

structures is derived. In addition, an expression is derived for the derivative

of the spreading resistance with respect

to the logarithm of the probe spacing,

and discussed for the evaluation of

these equations for nonuniform structures. The relation between the fourprobe resistance, Z(x,S), and the

incremental sheet resistance, R(x), is

shown to arise in the limit as the probe

spacing becomes large compared to the

distance to an insulating boundary.

Specific examples are drawn from calculations on implant-type structures into

substrates having insulating boundaries

near the end of the implanted region

(junction isolation) as well as those

where the insulating boundary is far

from the implanted region (emulating the

back surface of a same conductivity type

substrate). Also presented is a method

for the self-consistent calibration of

spreading resistance profiles utilizing

Z(x,S).

[(301 ) 921-3621]

Brodfuehrer, B.P., Galloway, K.F., and

Wilson, C.L., Comparison of Simple

Approximations and Numerical Solutions

for the Threshold Voltage of IonImplanted Long-Channel MOSFETs, IEEE

Trans. Education, E-27, No.l, pp. 3-6

(February 1984).

The very simple approximations used for

calculating the threshold voltage sh

for ion-implanted long-channel MOSFETs

in classroom discussions are compared
Page 6 CEEE Technical Progress Bulletin - May 84

Process & Device Modeling , contd.

measurements are compared with the calculated threshold voltage shifts.

[Contact: Galloway, (301) 921-3541]

Power Devices

Released for Publication

Berning, D.W., Effects of Very Fast

Drain Voltage Transitions on Power

MOSFETs.

Radio frequency energy was applied to

the drains of high voltage power MOSFETs

to examine possible effects of high slew

rates, such as those that may be encoun- tered in switching applictions, on these

devices. Evidence of partial turn-on of

the parasitic bipolar transistor was observed.

[(301) 921-3621]

Packagi ng

Recently Published

Oettinger, F.F., Thermal Evaluation of

VLSI Packages Using Test Chips ~ A

Critical Review, Solid State Technology, 27, No. 2, pp. 169-179 (February

1984).

The design, analysis, and utilization of

test chips for the thermal evaluation of

VLSI packages are discussed. The factors that determine the thermal performance of microelectronic devices are the

circuit type, the fabrication technology, the die size, the die attachment

method, the package and heat dissipater

design, and the ambient environment.

Thermal test chips are extensively used

in characterizing new package designs

for VLSI chips in the 1- to 10-W range.

The information discussed should allow

the engineer to rationally choose a particular test chip design and to un- derstand the implications of measurements to thermally characterize a particular chip-package system.

[(301) 921-3541]

Other Semiconductor Metrol ogy

Released for Publication

Schafft, H.A., Younkins, C.D., Grant,

T.C., Kao, C-Y., and Saxena, A.N.,

Effect of Passivation and Passivation

Defects on Electromigration Failure In

Aluminum Metallization, to be

published in Proc. International Reliability Physics Symposium [paper given

at Symposium, Las Vegas, NV, April 5,

1984].

Metal line structures with intentional

defects in the passivation, to simulate

cracks or pin holes, were used in electromigration studies. Results show that

the stress changes in the metallization

caused by these defects are not as important as the restraining action of the

passivation in affecting a metallization's resistance to electromigration

failure. Also, the observed effects of

restorative forces acting on the metallization suggests that continuous monitoring for open-circuit failure may be

necessary to obtain an accurate measure

of the mean-time-to-fai lure.

[(301) 921-3621]

FAST SIGNAL ACQUISITION, PROCESSING,

AND TRANSMISSION

Waveform Metrology

Released for Publication

Oldham, N.M., Power Calibration

Standard Based on Digitally Synthesized

Slnewaves.

The unit of electric power at 60 Hz is

often derived using impedance bridge

techniques in which the alternating

voltage is referred to the direct

voltage standard through a thermal

converter. An alternative calibration

technique is described in which the ac to dc transfer is made through digitalto-analog converters (DACs) in the form

of a dual-channel digital sinewave

generator. The power is calculated from
CEEE Technical Progress Bulletin - May 84 Page 7

Waveform Metrology , cont'd.

measurements of voltage, current, and

phase angle, all of which rely on the

accuracy of the digital generator and

ultimately on the accuracy of the DACs.

Measurement uncertainties of less than

100 ppm have been achieved.

T ( 301) 921-2727]

Schoenwetter , H.K., A Programmable

Precision Voltage-Step Generator for

Testing Waveform Recorders.

A pulse generator for testing the

approximate step-response of waveform

recorders is described. The initial and

final levels of voltage steps are each

programmable within the range of ±1 V for a 50-ohm termination and within ±5 V

for a high-impedance load. Voltage

steps within these ranges settle to

within ±0.02% of full-scale range in

less than 30 and 40 ns, respectively,

for a load capacitance of <30 pF. The

corresponding 10-90 percent transition

durations are approximately 7 and 12 ns. [(301) 921-2727]

Recently Published

Lawton, R.A., Nahman, N.N., and

Bigelow, J.M., A Solid State Reference Waveform Standard, Proc. IEEE

Instrumentation and Measurement Technology Conference, pp. 74-76 (1984)

[Conference Long Beach, CA, January

17-18, 1984; extended version in

preparation for publication in 1984.

A solid-state reference waveform filter

has been developed which uses the

Maxwel 1 -Wagner capacitor effect. This

filter is realized in a stripline con- figuration with a lossy dielectric con- sisting of a thick (5-^m) layer of Si

2 on Si. The equivalent circuit of this

filter is equivalent to that for previously developed filters which used a lossy liquid dielectric. A preliminary

design has been completed and a filter

fabricated for which the design characteristic impedance, 38 ft, and transition

duration (rise time), 350 ps, agree with

measured values to within 2% and 3%,

respectively. The temperature dependence of the filter transition duration

has been estimated from the temperature

dependence of the filter conductance to

be about 1% per degree Celsius.

[(303) 497-3339]

Cryoel ectronic Metrology

Released for Publication

Niemeyer, J., Hinken, J.H., and Kautz,

R.L., Microwave-Induced ConstantVoltage Steps at One Volt from a Series

Array of Josephson Junctions.

It is demonstrated that a series array

of 1474 Josephson junctions can produce

quantized voltages up to 1.2 V when

driven by microwaves at 90 GHz in the

absence of a dc bias. This result

brings closer the possibility of a practical Josephson voltage standard at the

1 - V level

[Contact: Kautz, (303) 497-3391]

Recently Published

McDonald, D.G., Power Gain of a SQUID

Amplifier, Applied Physics Letters,

44, No. 5, pp. 556-558 (March 1984).

The power gain of a dc superconducting

quantum interference device (SQUID)

amplifier, with tuned input and output

circuits, is computed as a function of

the current and magnetic biases. A gain

of 20300 is found at 1.5 GHz and 3470 at

3.0 GHz, implying a frequency dependence

to the gain of approximately ur 2

. The

gain, as derived from the resistively

shunted junction model, is compared with

the gain of a simplified model based on the dc magnetic response V<$>. This com- parison shows that the V<j> description of

the SQUID can lead to large errors.

[(303) 497-5113]

Antenna Metrology

Released for Publication

Hill, David A . , Antenna s for
Page 8 CEEE Technical Progress Bulletin - May 84

Antenna Metrology , cont'd.

Geophysical Applications, to be

published as chapter in book. Handbook

on Antenna Theory and Design, Eds.

Y.T. Lo and S.W. Lee [publisher, Howard

W. Sams and Company],

This chapter is part of the Handbook

section on Applications; other sections,

with some 40 chapters in all, deal with

Fundamentals, Antenna Theory, and

Related Topics. The chapter discusses a number of antennas which are used for

subsurface probing of the earth. The

two most commonly used antennas are grounded wires and loops, and they are covered in detail for both time-harmonic

and transient excitations. Emphasis is

placed on the extremely low frequency

(ELF) portion of the spectrum where it

is possible to probe the earth to depths

of several hundred meters.

[(303) 497-3472]

Wittman, R.C., Probe Correction in

Spherical Near-Field Scanning, Viewed

as an Ideal Probe Measuring an Effective Field [paper to be given at IEEE

Antennas and Propagation Society

Meeting, Boston, MA, June 1984].

In order to reduce measurement and com- putation complexity, most probecorrected, spherical near-field scanning

facilities use a special "symmetric"

probe, the output of which exhibits a sin x -- cos x dependence as the probe

is rotated about its axis by an angle x» We show here that such a probe is mathematically equivalent to ideal dipole

probes measuring an effective field.

Computational efficiency and structural

simplicity result, since much of the

effort concerns the calculation of the

effective field, and this may be

accomplished with a no-probe correction

al gorithm.

[(303) 497-3326]

Noise Metrology

Recently Published

Counas, G.J., NBS 2.0 GHz to 4.0 GHz

Automated Radiometer Operation ano Service Manual, NBS I R 83-1697

(January 1984).

The equipment described by this manual

is the 2.0 to 4.0 GHz subsystem of the

automated radiometer. This section of

the multiband automated radiometer is a coaxial total power radiometer which

implements a six-port reflectometer for

impedance characterization and correc- tion and utilizes a newly developed

broadband cryogenic noise standard. NBS

noise measurement capability in this

frequency band has been expanded by the

addition of this system which adds con- tinuous frequency coverage to existing

services along with the capability to

measure cryogenic noise sources. The

manual includes operation and service

information.

[(303) 497-3546]

Daywitt, W.C., A Coaxial Noise

Standard for the 1 GHz to 12.4 GHz

Frequency Range, NBS Technical Note

1074 (March 1984).

This note describes the design and con- struction of a coaxial thermal noise

standard. The standard is designed to

operate at the boiling point of liquid

nitrogen with a noise temperature accu- rate to ± 1 K in the frequency range

from 1 GHz to 12.4 GHz.

[(303) 497-3720]

Optical Fiber Metrology

Released for Publication

Rodhe, P.M., Intramodal Part of the

Transfer Function for an Optical Fiber.

Intramodal contributions in measurements

of optical fiber bandwidth are investigated theoretically and experimentally

in the quasimonochromatic case. A

relation is established between the

intramodal transfer function and a possibly non-Gaussian source spectrum,

which may also vary with modulation

frequency. By considering the latter
CEEE Technical Progress Bulletin - May 84 Page 9

Optical Fiber Metrology , cont'd.

variation in particular, we are able to

predict the intramodal length dependence

and show how it may deviate from that of

a conventional approach.

[Contact: Sanders, (303) 497-5341]

Rodhe, P.M., The Bandwidth of a Multimode Fiber Chain.

We propose a new method for evaluating

the baseband transmission in a multimode

fiber chain. Carnevale and Paek [Bell

Syst. Tech. J. , Vol . 62, pp. 1415-1431

(1983)] stated that errors in the fiber

manufacturing process will randomly

distort a desired index profile, presumably of power-law type. We extend

their discussion to the bandwidths of

concatenated fibers, by considering

Gaussian approximations to actual transfer functions. The bandwidth can thus

be separated into two parts, one of

which is due to the over-and undercompensation of individual, idealized

power-law profiles and the other which

refers to random profile distortions as well as possible mode coupling within

mode groups. The former part should

normally dominate the length dependence

of longer chains. The latter part may

be replaced by an expectation value,

typical for the actual manufacturing

process. A remarkably good agreement is

achieved between experimental and predicted bandwidths for various chain

configurations.

[Contact: Sanders, (303) 497-5341]

Other Fast Signal Topics

Released for Publication

Sanders, A. A., Some Future Trends In

Optical Electronic Metrology, to be

published in Proc. 1984 Measurement

Science Conference [paper given at

Conference, Los Angeles, CA, January

19-20, 1984].

The use of optical related devices in

high technology is expanding at a dramatic rate. Applications include the

expanding use of optical fibers in telecommunications and sensors, lasers in

industrial processing and medicine,

optical storage devices, directed energy

weapons for defensive purposes, non- destructive testing, -- the list goes on and on. The Optical Electronics Metrology Group of the National Bureau of

Standards has the responsibility for

developing the standards, measurement

data, and methodology infrastructure for

supporting much of this expanding technology. This paper will review some of

the ongoing research conducted by this

Group and some of the perceived

important technological applications in

this area for the next few years. It will discuss Group plans for developing

the measurement infrastructure to support these innovations. The intent is

to generate a dialogue to improve the

Group's planning process and help sort

out the most pressing priorities for

optical measurements.

[(303) 497-5341]

ELECTRICAL SYSTEMS

Power Systems Metrology

Released for Publication

Hebner, R.E. and Kelley, E.F.,

Electro-Optic E 1 ec t r 1 c - F 1 e 1

Measurements Near 01 1 -Pressboard

Interfaces, to be published in Conf.

Record of 1984 International Symposium

on Electrical Insulation [paper to be

given at Symposium, Montreal, Canada,

June 11-13, 1984].

Electro-optical Kerr-effect measurements

are made to characterize the electric

field in the vicinity of pressboard

interfaces in transformer oil. The

interfaces are placed between parallel

plate electrodes and are oriented

parallel to the field direction and in

contact with both electrodes. The

electric field enchancement in the

liquid alone (due to space charge) Is compared with the enhancement with
Page 10 CEEE Technical Progress Bulletin - May 84

Power Systems Metrology , cont'd.

interfaces installed. These results serve to better define the roles of

space charge and interfacial surface

charging in pressboard/transformer-oil

high-voltage systems.

[(301) 921-3121]

Hebner, R.E., Kelley, E.F., Fitzpatrick,

G.J., and Forster, E.O., The Effect

of Aromatic Impurities on the Positive

Streamer Growth in Marcol 70, to be

published in Conf. Record of 1984

International Symposium on Electrical

Insulation [paper to be given at

Symposium, Montreal, Canada, June

11-13. 1984].

The growth of positive streamers has

been photographed in Marcol 70 in the

presence and the absence of dimethyl - aniline (DMA). Marcol 70 is a fluid

which is chemically similar to transformer oil, but with the aromatic

components removed. This combination

has been studied previously by other

authors, and was chosen for this work

because it was expected to provide

useful information on the contribution

of aromatic components to the electrical

properties of transformer oil. As in

earlier studies, it was noted that the

positive streamers initially propagate

at or near sonic speed. After the

streamer has propagated some distance

across the inter-electrode gap, a supersonic secondary streamer develops

that leads to breakdown. The initiation

of this second event is significantly

delayed by DMA. As in earlier studies

in n-hexane, the reason for this

behavior is assumed to be structural

changes in the streamers because of the

low ionization potential of DMA. These

structural changes, in turn, lead to a modification of the electric field

^

st ri buti on between the positive

streamer tips and the plane cathode.

Information derived from the photographs

suggests that the field distribution

changes from a very nonuniform to a more uniform one, which would lead to the

observed higher breakdown voltages. The

data presented are not in complete

agreeement with those reporteo in the

literature. This disagreement is

believed to be attributable to

experimental differences.

[(301) 921-3121]

Misakian, M., Electrical Parameters in

60-Hz Biological Exposure Systems and

Their Measurement: A Primer, to be

issued as NBS Technical Note.

This report presents material which is

intended to provide assistance in the

measurement of a number of electrical

parameters that are of importance during

bioeffects research involving 60-Hz

electric and magnetic fields. The

parameters that are considered are the

electric field strength E, the magnetic

induction or flux density B, field

uniformity, harmonic content, phase

relations between field components, and corona. Descriptions of the fields and

methods for their laboratory generation

are surveyed. The text is purposely

elementary with references provided to

aid the interested reader in obtaining a fuller understanding of many of the

topics. It is shown that using

relatively simple instrumentation, it is

possible to characterize reasonably well

the electric and magnetic fields used in

animal exposure studies.

[(301) 921-3121]

Misakian, M., Calibration of Flat

60-Hz Electric Field Probes.

A parallel-plate apparatus which is

suitable for calibration of flat 60-Hz

electric field probes used in bioeffects

studies is described.

[(301) 921-3121]

Van Brunt, R.J., Anderson, W.E., and

Lazo, T.C., Production Rates for

Discharge Generated SOF2 , SO2 F2 in SF6

and SF6 /H2 O Mixtures, to be published

in Proc. Fourth International Symposium

on Gaseous Dielectrics [paper given at

Symposium, Knoxville, TN, April 30 - May 3, 1984].
CEEE Technical Progress Bulletin - May 84 Page 11

Power Systems Metrology , cont'd.

Production rates for SOF2 , SO2 F 2 , and

SO2 have been measured by quantitative

gas analysis during continuous corona discharges in compressed SF6 containing

trace levels (10 to 200 ppm) of water

vapor for total gas pressures between

100 and 300 kPa. The rates are ex- pressed both in terms of mol es-per-uni

of energy dissipated in the discharge,

and in mo 1 es -p e r- u n i t of charge

transported in the gap. Variations in

the absolute and relative concentrations

of H2O and SOF4, respectively, were also

monitored. Determinations were made of

the polarity, power, and pressure

dependences of these rates. The time

rates-of-production for SOF2 and SO 2 F 2 are more nearly proportional to the

discharge current than to the power

dissipation. The results indicate that

the equilibrium concentration of H2 O is

significantly affected by the discharge.

The influence of O 2 and H 2 O on oxyfluoride production is discussed.

[(301) 921-3121]

Recently Published

Hebner, R.E., Development of Power

System Measurements — Quarterly Report

April 1, 1983 to June 30, 1983, NBSIR

84-2809 (February 1984).

insul ators.

[(301) 921-3121]

Hebner, R.E., Development of Power

System Measurements — Quarterly Report

July 1, 1983 to September 30, 1983,

NBSlR 84-2818 (February 1984)

This report documents the progress on three technical investigations sponsored

by the Department of Energy and performed by the NBS Electrosystems Division.

The work described covers the period

from July 1, 1983 to September 30, 1983.

The report emphasizes the measurement of

the 60-Hz electric and magnetic field in

biological exposure facilities, the

measurement of water vapor, the production rates of oxyfluorides in SFg corona discharges, and in the measurement of

space charge in transformer oil.

[(301) 921-3121]

Magnetic Materials and Measurements

Released for Publication

Cromar, M., Clark, A.F., and Fickett,

F.R., Monopole Detection Studies at

NBS, to be published in Proc.

Monopole Detection by Induction

Techniques Conference [paper given at

Conference, Ann Arbor, MI, October 5-9,

1983].

This report documents the progress on five technical investigations sponsored

by the Department of Energy. Three were performed by the NBS Electrosystems

Division, the fourth by the Department

of Electrical Engineering of the

University of Southern California, and

the fifth by the College of Engineering

at the University of South Carolina.

The work described covers the period

from April 1, 1983 to June 30, 1983.

The report emphasizes the calibration of

instruments designed to measure the 60-

Hz electric field in biological exposure

facilities, the effect of water on SF& corona discharges, the measurement of

failure mechanisms in liquid/solid and

gas/solid insulating systems, and the

development and behavior of active

Magnetic monopole detectors have been

under study and evaluation at NBS for

the past year. This paper describes

some of the work. It is -the written

version of a brief workshop Contribution

made at the M0N0P0LE '83 conference held

at the University of Michigan.

[(303) 497-5375]

Goldfarb, R.B. and Minervlnl, J.V.,

Calibration of AC Susceptometer for

Cylindrical Specimens.

The absolute magnetic susceptibility of

cylindrical specimens is obtained witI an ac susceptometer whose calibration S

based on a calculation of mutual

i nductance.

[(303) 497-3650]
Page 12 CEEE Technical Progress Bulletin - May 84

Magnetic Materials & Meas ., cont'd.

Goldfarb, R.B., Rao, K.V., Chen, H.S.,

Magnetic Phase Diagram of the Amorphous

Pd-Fe-Si Ferroglass Alloy System: New

Analysis of Spinglass Measurements.

The real (in-phase) and imaginary

(quadrature) components of ac magnetic

susceptibility were used to determine

the Curie (Tq) and spin-freezing

(Tf) termperatures , and hence the

magnetic phase diagram, of the Pd-Fe-Si

system. For increasing Fe concentration, this alloy goes from a simple

spinglass (in which a paramagnetic-tospinglass transition occurs as a function of decreasing temperature) to a ferroglass (defined as a spinglass in

which there is an intervening ferromagnetic-like state). It is shown that the

peak in the imaginary, or loss, component of susceptibility is especially

useful in determining T^. Such a determination is difficult in the case

of ferrogl asses when only the vector

susceptibility is measured. In such

cases, T

f is below the temperature

of the vector susceptibility maximum.

DC magnetization measurements of a ferroglass show that the field-cooled and

zero-field-cooled curves bifurcate at

Tf, below the peak temperature. The

tnermoremanent magnetization decays with

increasing temperature until Tf,

whereupon it levels off, finally dropping to zero at T

c . it is emphasized that spin freezing is a function

of not only temperature, but also of

time and field. Therefore, a phase

diagram that purports to show Tf,

based on ac susceptibility measurements

as a function of temperature, is

strictly valid only for the frequency

and rms field specified. This caveat is

most applicable to ferroglasses.

[(303) 497-3650]

Superconductors

Released for Publication

Ekin, J.W. and Hong, M., Critical

Parameters and Strain Effects In

Liquid-Infiltrated Nb-Ta/Sn Multlfilamentary Superconductors.

Data are presented on the strain dependence of the critical current and critical field of Nb-Ta/Sn superconductors

fabricated by the liquid-tin infiltration process. The results show that

liquid infiltrated Nb-Ta/Sn superconductors have several significant advantages over bronze-process Nb/Sn superconductors: an overall Jc that is 3 to

10 times higher for magnetic fields in

the range 13 to 20 T, an irreversible

(damage) strain limit twice as large,

and a Jc elastic-strain sensitivity less

than half as large at fields above about

16 T. These improved properties are attributed to several unique characteristics of the liquid i nf i It ration

process: a tough Nb-Ta matrix, fine

equiaxial A15 grains, and a uniform

stoichiometric Sn concentration.

[(303) 497-5448]

Tinkham, M., Beasley, M.R.,

Larbalestier, D.C., Clark, A.F., and

Finnemore, D.K., Research

Opportunities In Superconductivity.

Opportunities for research in the field

of superconductivity are identified in

this report of a "Workshop on Problems

in Superconductivity" held at Copper

Mountain, Colorado, August 22-23, 1983.

Key problems in superconductivity, high

payoff areas of research, barriers to

progress, and the need for new facilities are outlined in the three areas of

basic physics, materials, and devices.

[Contact: Clark, (303) 497-3253]

Recently Published

Clark, A.F., Goodrich, L.F., and

Fickett, F.R., Experience In

Standardizing Superconductor

Measurements, Journal De Physique,

Colloque Cl, supplement to Vol . 45, No.

1, pp. Cl - 379 - Cl - 372 (January 1984).

The research leading to standard mea- surement techniques for characterizing

practical superconductors is described.
CEEE Technical Progress Bulletin - May 84 Page 13

Superconductors , cont'd.

Recently Published

Special attention is given to measuring

critical current.

[(303) 497-3253]

Other Electrical Systems Topics

Recently Published

Bell, R.S., Jones, C.K., and Fickett,

F.R., Temperatures, Cryogenics,

pp. 31-35 (January 1984).

Interfaces between metals and polytetraf 1 uoroethyl ene (TFE) are common in cryogenic systems. In this paper we present

results from measurements of the temperature dependence of the dynamic coefficient of friction between commercially

pure copper and TFE. The effect of the

copper surface finish was also determined. The effects of load and speed

were evaluated over a small range, but

nearly all data were taken at a surface

speed of 5.4 citts - 1 with a load of 1.63

N*cm- 2

. These values are typical of

those encountered by the moving parts of some cryogenic machinery.

[Contact: Fickett, (303) 497-3785]

ELECTROMAGNETIC INTERFERENCE

Released for Publication

Crawford, M.L. and Koepke, G.H.,

Operational Considerations of a Reverberation Chamber for EMC Immunity

Measurements, Some Experimental

Results, to be published in Proc.,

1984 IEEE National Electromagnetic

Compatibility Symposium [paper given at

Symposium, San Antonio, TX, April

24-26, 1984].

This paper describes measurement procedures and results obtained from evaluation of a shielded chamber having

dimensions (2.74 x 3.05 x 4.57) m modified into a mode-tuned reverberation

chamber. A brief description of the

measurement setup and resonant cavity

theory is given. The measurements

described include an evaluation of the

following chamber parameters: 1)

excitation and receiving antennas'

voltage standing wave ratio and

efficiency, 2) mode tuner effectiveness, 3) loss, and 4) electromagnetic

test field statistical characteristics.

In addition, the measurement results of

two techniques to determine the field

strength in the reverberation chamber

are compared. Results shown cover the

frequency range 200 MHz to 18 GHz.

[(303) 497-5497]

Daywitt, W.C., Complex Permittivity of

Beryllium Oxide Between 100 and 300

Kelvins at 9.3 Gigahertz.

Measurement results at 9.3 GHz of the

relative dielectric constant and loss

tangent of ceramic beryllium oxide at

99, 145, 223, and 300 Kelvins are

reported.

[(303) 497-3720]

Driver, L.D. and Reeve, G.R., Application of a Systematic Approach to an Investigation of HF Interference to a Shipboard Radar Set, to be published

in Proc. 1984 IEEE National Electromagnetic Compatibility Symposium [paper

given at Symposium, San Antonio, TX,

April 24-26, 1984],

This paper describes an investigation of

electromagnetic interference to shipboard radar caused by a colocated HF, one kilowatt transmitter. The test

procedures and analysis used to determine the points of EM field entry, the

corrective measures taken, and a summary

of the results achieved are described.

[(303) 497-3557]

Kanda, M., A Methodology for

Evaluating Microwave Anecholc Chamber

Measurements [paper to be given at

Sixth Zurich Symposium and Technical

Exhibition on Electromagnetic

Compatibility, Zurich, Swi tzerl and

,

March 5-7, 1985].
Page 14 CEEE Technical Progress Bulletin - May 84

Electromagnetic Interference , cont'd.

The anechoic chamber measurement is

evaluated in terms of the net power

delivered to a transmitting antenna, the

near-zone gains of open-ended rectangular waveguides and rectangular pyramidal

horns, and reflections from chamber

walls. The on-axis field intensity of

the standard transmitting horn in an anechoic chamber is calculated in terms

of the net power delivered to the transmitting antenna. The resulting data can

be used for estimating the overall

uncertainty in the anechoic chamber

measurements. The statistical control

of the measurement process by use of

transfer standard antennas will monitor

the measurement uncertainties. This

paper discusses the methodology for

evaluating anechoic chamber measurements.

[(303) 497-5320]

Ondrejka, A.R. and Adams, J.W.,

Shielding Effectiveness Measurement

Techniques, to be published in Proc.

1984 IEEE National Symposium on Electromagnetic Compatibility [paper

given at Symposium, San Antonio, TX,

April 24-26, 1984].

Five methods of measuring shielding

effectiveness of a lossy material are compared. Comparative measurement data are shown, and insights are offered as to why the results of the different

methods do or do not agree. This is a preliminary analysis, not a definitive

wnrk

[(303) 497-3328]

Wilson, Perry F., Small Aperture

Analysis of the Dual TEM Cell, to be

published in Proc. 1984 IEEE National

Symposium on Electromagnetic Compatibility [paper given at Symposium, San

Antonio, TX, April 24-26, 1984].

This paper describes an analysis of dual

TEM cell coupling based on Bethe's small

aperture theory. This approach allows one to model a variety of possible

aperture shapes (circular, elliptical.

square etc.), including material-1 oaded

apertures of finite thickness. Measurements demonstrate that the theory

accurately predicts coupling for an unloaded aperture.

[(303) 497-3842]

Recently Published

Alspach, W.J., Miller, C.K.S., and

Reeve, G.R., An Assessment of

Electromagnetic Interference and

Electromagnetic Compatibility (EMC)

Measurement Practices to Meet U.S.

Army Aviation Research and Development

Command EMI/EMC Requirements, NBSIR

84-1698 (January 1984).

A survey of selected industrial

contractors, airframe manufacturers, and

electronic test and calibration firms was conducted during June - August 1982

by the NBS Electromagnetic Fields

Division, to assess industrial and

commercial testing and measurement

practices used to meet electromagnetic

interference/electromagnetic

compatibility (EMI/EMC) requirements of

the U.S. Army Aviation Research and

Development Command (AVRADCOM). This

survey addressed the cost of conducting

EMI/EMC tests; whether or not electronic

components, subassemblies, systems, and

their testing met specified AVRADCOM

EMI/EMC tests and requirements; and

whether the test practices, test

equipment, and EMI/EMC requirements are appropriate. The following conclusions

were reached: (1) Victim-source

testing, although limited, is the only

current EMI test that is meaningful for

whole system testing. (2) It is

questionable whether electronic systems

will perform satisfactorily in a battlefield electromagnetic environment.

(3) There is no correlation in EMI/EMC

test practices; it is possible that

electronic systems are overdesigned,

overbuilt, and overtested. (4) Future

issues such as high-level field testing

and electromagnetic pulse (EMP) need to

be addressed.

[Contact: Reeve, (303) 497-3557]
CEEE Technical Progress Bulletin - May 84 Page 15

Electromagnetic Interference , cont'd.

Hill, D.A., Theory of Near-Field

Phased Arrays for Electromagnetic

Susceptibility Testing, NBS Technical

Note 1072 (February 1984).

The feasibility of using a near-field

arrays for electromagnetic susceptibility testing is studied. The basic

objective is to control the element

weightings such that a plane wave is

generated within the test volume. The

basic theory is developed for arbitrary

array geometries, and numerical results

are obtained for finite planar arrays.

A general near-field array synthesis

technique is developed; this technique

minimizes the mean square error in the

test volume while constraining the array

excitations. The constraint prevents

large currents and is useful in minimizing the fields outside the test

volume. The basic idea looks promising,

but some practical considerations, such

as bandwidth and angular scanning limitations, require further theoretical and

experimental investigations.

[(303) 497-3472]

Jesch, R.L. and McLaughlin, R.H.,

Dielectric Measurements of Oil Shale as Functions of Temperature and Frequency, IEEE Trans. Geoscience and Remote

Sensing, GE-22, No. 2, pp. 99-105

(March 1984)

A hi gh -t emperat u re sample holder

designed by the National Bureau of Standards was used to determine the dielectric properties of approximately 40 oil

shale samples as functions of temperature and frequency. A description of

the sample holder characterization is

given along with the measurement procedure and the sample preparation. Experimental results are given for different

oil shale samples, varying in yield from

0.024 L/kg (6 gal/ton) to 0.338 L/kg (81

gal/ton), that were measured at room temperature (25°C) up to 500°C and within the frequency range of 5 to 1000 MHz.

[(303) 497-3496]

1984 CEEE CALENDAR

June 18-21 (Gaithersburg, MD)

Power Electronics Specialists

Conference. Co-sponsored by the

the Power Electronics Council of the

Institute of Electrical and Electronics

Engineers and the National Bureau of

Standards, the Conference is intended to

provide a venue where specialists in

circuits, systems, electron devices,

magnetics, control theory, instrumentation, and power engineering may

discuss new ideas, research,

development, applications, and the

latest advances in power electronics.

The Conference will incorporate six

technical sessions (on converter

circuits, converter systems, converter

control, motor drives, power components,

and modeling and analysis techniques),

a one-day tutorial on Electromagnetic

Compatibility in Power Systems, and

three special "rap sessions" (EMI, RFI

,

and Noise: Fact or Fiction; Emerging

Power Semiconductors: Positive and

Negative Attributes; and Future Trends

in Aircraft Power Electronics and

Electrical Actuators).

[Contact: Sandra B. Kelley (301)

921-3541]

August 28-30 (Vail, CO)

Short Course on Optical Fiber

Measurements. This course is

addressed to scientists and engineers

who are involved in fiber

characteri zat ion . The course will

emphasize concepts, techniques, and

apparatus used in measuring the

engineering parameters of

telecommunication-grade fibers. A

degree in electrical engineering or physics is assumed. The course will

last three days with 18 hours of class

time.

[Contact: Robert L. Gallawa (303)

497-3761]
Page 16 CEEE Technical Progress Bulletin - May 84

CEEE CALENDAR, cont'd.

October 15-17 (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers. The Symposium is the

principal forum for the exchange of

information on the physics and

technology of materials for high-power

lasers. Topics to be discussed include

new materials, bulk damage phenomena,

surface and thin film damage, design

considerations for high-power systems,

and fundamental mechanisms of laserinduced damage. The series of

conference proceedings resulting from

these annual symposia has collectively

become the principal repository of

information on optics for all aspects of

h i g h

- p o we r / h i g h - e n e r gy lasers,

including, in addition to the subjects

given above, environmental degradation,

durability, fabrication, material growth

and deposition processes, and testing.

[Contact: Aaron A. Sanders (303)

497-5341]

NEW STANDARD REFERENCE MATERIALS

Two new Standard Reference Materials

(SRMs) for calibrating equipment used to

make spreading resistance measurements

have been released by the Semiconductor

Materials and Processes Division to the

NBS Office of Standard Reference

Materials for sale to the public. SRM

2526 applies to (lll)-oriented p-type

silicon surfaces and SRM 2527 to Tlll)-

oriented n-type silicon surfaces. Each

SRM consists of a set of about 15

specimens (number of specimens varies

depending on availability of material of

appropriate resistivities) of silicon,

6 x 12 mm in area and mounted on beveled

metal blocks for convenient use in

calibrating commercial spreading

resistance equipment. These silicon

chips have resistivities ranging from

about 0.001 to 200 Q*cm. The

uncertainties in resistivity range typically from 2 to 5 percent for p-type

specimens and from 4 to 10 percent for

ii -type. Two companion SRMs for (110)

silicon surfaces are about to be re- leased (2528, p-type and 2529, n-type).

SPONSORS OF WORK REPORTED IN THIS ISSUE

National Bureau of Standards

Department of Defense

Defense Advanced Research Project

Agency; Calibration Coordination

Group; Defense Nuclear Agency

U.S. Ai r Force

Air Force Office of Scientific

Research; Air Force Satellite

Control Facility; Bolling Air Force

Base; Kirtland AFB; Newark Air

Force Station; Rome Air Development

Center; Space Division; WrightPatterson AFB

U.S. Army

Army Electronic Proving Ground;

Aviation Research & Development

Command; Ballistic Missile Defense

Systems Command; Fort Huachuca; Fort

Monmouth; Harry Diamond

Laboratories; Materials & Mechanics

Research Center; Redstone Arsenal

TMDE Support Group

U.S. Navy

Aviation Logistics Center (Patuxent

River); Aviation Research and

Development Command; Medical

Research & Development Command;

Metrology Engineering Center (Seal

Beach); Naval Air Systems Command;

Naval Air Test Center; Naval Sea

Systems Command; Naval Ship Research

& Development Center; Naval Surface

Weapons Center; Naval Weapons

Support Center (Crane); Office of

Naval Research

Department of Energy

Bonneville Power Administration;

Energy Systems Research; Fusion

Energy

Department of Justice

Law Enforcement Assistance

Administration

Department of Transportation

National Highway Traffic Safety

Admi nistration

Charles Stark Draper Laboratory

Environmental Protection Agency

International Copper Research

Association

National Aeronautics and Space

Admi nistration

Lewis Research Center

National Security Agency

Sandia National Laboratories
NBS-H4A (REV. 2-80

U.s. DEPT. OF COMM.

4. TITLE AND SUBTITLE

Center for Electronics and Electrical Engineering Technical Progress Bulletin

Covering Center Programs, January - March 1984 with 1984 CEEE Events Calendar

5. AUTHOR(S)

Compiler: J. Franklin Mayo-Wells

6. PERFORMING ORGANIZATION (If joint or other than NBS, see in struct/on s) 7. Contract/Grant No. NATIONAL BUREAU OF STANDARDS

DEPARTMENT OF COMMERCE 8. Type of Report & Period Covered

WASHINGTON, D.C. 20234 January - March 1984

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City. State, ZIP)

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

10. SUPPLEMENTARY NOTES

All technical information included in this document has been approved for

publication previously.

f 1 Document describes a computer program; SF-185, FlPS Software Summary, is attached.

BIBLIOGRAPHIC DATA

SHEET (See / nstruction s)

1. PUBLICATION OR

REPORT NO. NBSIR 84-2877-1

2. Performing Organ. Report No 3. Publication Date May 1984

11. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bi bliography or literature survey, mention it here) This is the sixth issue of a quarterly abstract journal covering the work of the

National Bureau of Standards Center for Electronics and Electrical Engineering.

This issue of the Center for Electronics and Electrical Engineering Technical

Progress Bulletin covers the first quarter of calendar year 1984. Abstracts are provided by technical area for both published papers and papers approved by NBS

for publication.

12. KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate <ey *o' -. antennas; electrical engineering; electrical power; electromagnetic inter -

• ; electronics; instrumentation; laser; magnetics; microwave; optical fiber;;

semiconductors; superconductors.

13. AVAILABILITY 14. N 0. OF

[JS£J Unlimited

printed pages

20

| | For Official Distribution. Do Not Release to NTIS

H Order From Superintendent of Documents, U.S. Government Printing Office, •‘•ashmgton, D.C. 20402. IS. Price

1_XJ Order From National Technical Information Service (NTIS), Springfield. VA. 22161 oO

1"

-J )MM« c
CENTER FOR

ELECTRONICS AND ELECTRICAL ENGINEERING

EUCTROSYSTEMS

DIVISION

H

Applied Electrical Measurements

Electronic Instrumentation and Metrology

Center (720)

ELECTROMAGNETIC

FIELDS

DIVISION

ELECTROMAGNETIC rl technology

DIVISION H

Antenna Systems

Metrology —j

Fields Characterization H

Interference

Characterization

-! Microwave Metrology

Optical Electronic Metrology

H

Cryoelectronics

Metrology

Superconductors

and Magnetic

Materials

KEY CONTACTS

SEMICONDUCTOR

MATERIALS AND

PROCESSES

DIVISION H

Silicon Characterization H

Process Control Measurements

I Micrometrology

H

Compound

Semiconductor

Processing Facility

SEMICONDUCTOR J

DEVICES AhD

CKCUITS

DIVISION

Integrated

Circuit Test

Structures

Device and

Process

Modeling

Device HMetrology

NBS/CEEE/FEB 84

Mr. Judson C. French (301) 921-3357

Dr. Alvin H. Sher (301) 921-3357

Ms. Carol P. Mullis (301) 921-3357

Director

Deputy Director

Administrative Officer

Electrosystems Division (722)

Chief

Electromagnetic Fields Division (723)

Chief

Electromagnetic Technology Division (724)

Chief Dr. Robert A. Xamper (303) 497-3535

Semiconductor Materials and Processes Division (725)

Chief v Mr. Robert I. Scace (301) 921-3786

Semiconductor Devices and Circuits Division (726)

Dr. Oskars Petersons (301) 921-2328

Mr. Charles K.S. Miller (303) 497-3131

Chief Dr. Kenneth F. Galloway (301) 921-3541

INFORMATION:

For additional information on the Center for Electronics and Electrical

Engineering, write to or call:

Center for Electronics and Electrical Engineering

National Bureau of Standards

Metrology Building, Room B-35S

Gaithersburg, Maryland 20899 Telephone (301) 921-3357

USCOMM-NBS-DC