Modeling, Fabrication, and Electrical Testing of MetalInsulator-Metal Diode 

by Dr. Terrance O’Regan, Matthew Chin, Cheng Tan, 

and Dr. Anthony Birdwell 

ARL-TN-0464 December 2011 

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Army Research Laboratory 

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ARL-TN-0464 December 2011 

Modeling, Fabrication, and Electrical Testing of MetalInsulator-Metal Diode 

Dr. Terrance O’Regan, Matthew Chin, Cheng Tan, 

and Dr. Anthony Birdwell 

Sensors and Electron Devices Directorate, ARL 

Approved for public release; distribution unlimited. 
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Modeling, Fabrication, and Electrical Testing of Metal-Insulator-Metal Diode

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Dr. Terrance O’Regan, Matthew Chin, Cheng Tan, and Dr. Anthony Birdwell

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14. ABSTRACT

We fabricated, tested, and modeled metal-insulator-metal (MIM) diodes for application into a nanorectenna energy-harvesting 

system. The MIM diodes were constructed of a niobium (Nb) bottom metal, niobium pentoxide (Nb2O5) dielectric, and 

varying top metals (copper, silver, and gold). Modeling and electrical testing were used to extract the dielectric constant of 

Nb2O5 as well as the metal-insulator barrier heights. The modeling also gave insight into the so-called “rectification reversal,”

where the rectification polarity depends on which transport mechanism (thermionic emission or tunneling) dominates. 

Including an approximation for the image potential in the model was shown to be critically important in understanding the 

rectification reversal and quantitatively reproducing the measured electrical data. Future work will focus on verifying 

extracted barrier heights by photoemission techniques and exploring other material stacks. In addition, the dielectric thickness 

will be reduced and the temperature varied to further study tunneling dominated rectification.

15. SUBJECT TERMS

Metal-Insulator-Metal diode, terahertz rectification, tunneling, thermionic, barrier height

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19a. NAME OF RESPONSIBLE PERSON

Dr. Terrance O’Regan

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Contents

1. Introduction 1

2. MIM Model 1

2.1 Potential Energy and Image Potential . . . . . . . . . . . . . . . . . . . . . . 1

2.2 Thermionic Emission-limited Current . . . . . . . . . . . . . . . . . . . . . . 3

2.3 Tunneling-limited Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3. MIM Diode Fabrication 9

4. Comparison to Experimental Measurements 11

5. Conclusions and Future Work 15

References 17

Distribution 18

iii
List of Figures

1 Potential energy at 1-V forward bias for a symmetric MIM diode with φ1 =

1 eV, φ2 = 1 eV, s = 10 nm, K = 4, m = m0, and T = 300 K . . . . . . . . 3

2 Total potential energy with varying dielectric constant, K, values for the symmetric MIM diode in figure 1 . . . . . . . . . . . . . . . . . . . . . . . . . . 3

3 Maximum energy barrier above the negatively biased Fermi level for the forward biased MIM diode in figure 1 . . . . . . . . . . . . . . . . . . . . . . . 4

4 Thermionic emission-limited current through the symmetric MIM diode in

figure 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

5 Potential energy at 1-V forward bias for a symmetric MIM diode with φ1 =

1 eV, φ2 = 1 eV, s = 5 nm, K = 4, m = m0, and T = 300 K . . . . . . . . . 6

6 Maximum and average barrier height vs. applied bias for the symmetric MIM

diode in figure 5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

7 Absolute value of tunnel-limited, thermal emission-limited, and total currents

vs. applied bias for the symmetric MIM diode in figure 5 . . . . . . . . . . . 7

8 Absolute value of tunnel-limited, thermal emission-limited, and total currents

vs. applied bias for an asymmetric MIM diode with φ1 = 0.2 eV, φ2 = 1.2

eV, s = 5 nm, K = 4, m = m0, and T = 300 K . . . . . . . . . . . . . . . . . 8

9 Absolute value of tunnel-limited, thermal emission-limited, and total currents

vs. applied bias for an asymmetric MIM diode with φ1 = 0.2 eV, φ2 = 2.2

eV, s =5 nm, K = 4, m = m0, and T = 300 K . . . . . . . . . . . . . . . . . 9

10 Maximum barrier height and tunneling distance vs. applied bias for the asymmetric MIM diode in figure 9 . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Simple square pillar structures were used as MIM diodes based on niobium

(Nb)/niobium pentoxide (Nb2O5)/x material stacks, where x designates copper (Cu), silver (Ag), and gold (Au) for different device sets. The square

pillars had dimensions of 60 μm × 60 μm, and were drawn in AutoCAD . . 10

12 The image shown is an example of MIM diodes fabricated using the process

described in this section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

iv
13 In this cartoon, a top and cut-away view of the MIM tunnel diodes fabricated

are provided with the material stack thicknesses and dimensions of the pillar

structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Modeled and experimental current characteristics for an Nb/Nb2O5/Cu device 13

15 Modeled and experimental current characteristics for an Nb/Nb2O5/Ag device 14

16 Modeled and experimental current characteristics for an Nb/Nb2O5/Au device 14

List of Tables

1 Best-fit MIM modeling parameters . . . . . . . . . . . . . . . . . . . . . . . 15

v
vi 

INTENTIONALLY LEFT BLANK
1. Introduction

Metal-insulator-metal (MIM) diodes that rely on quantum-mechanical tunneling for

current generation are one of the few structures capable of rectifying radiation absorbed by

a nano-antenna designed for the terahertz frequency range (visible and infrared

wavelengths) (1, 2). For this application, diodes with current-voltage (I-V) characteristics

that show high asymmetry, strong nonlinearity, fast responsivity, low hysteresis, and low

turn-on voltage are desired (3). We show that these properties depend primarily upon the

materials that make up the MIM stack.

We model the tunneling and thermionic currents, and compare to experimental data

measured on MIM diodes that we fabricated. Our model gives insight into the quality and

variability of the fabricated MIM structures. The model confirms that the MIM diode must

be dominated by quantum mechanical tunneling and be strongly asymmetric to rectify

terahertz radiation. We use our model to investigate the design space that meets these

requirements.

The outline of this report is as follows. First, we discuss the potential energy, an

approximation for the image potential, and the total potential energy. We show how the

image potential lowers the total potential barrier and its dependence on dielectric constant

of the insulator. Then, we discuss the thermionic emission-limited current as a function of

maximum barrier height and temperature. Next, we explain tunneling limited current and

its dependence on average barrier height and tunneling distance, and explore thermionic

emission and tunneling current as a function of insulator thickness and metal-insulator

barrier heights. Finally, we describe the MIM fabrication process and compare our model

to experimental data.

2. MIM Model

2.1 Potential Energy and Image Potential

The magnitude of the intrinsic electric field between two electrodes separated by an

insulating film is

Fi =

(Φm1 − Φm2)

es

, (1)

where Φm1 and Φm2 are the metal workfunctions, s is the insulator thickness, and e is the

unit of electron charge. The barrier heights at the metal-insulator interfaces are related as

φ2 = φ1 + eFis, (2)

1
where φ1 and φ2 are the metal-insulator barrier heights. It is straightforward to show that

the potential energy between the electrodes can be then written as

φ(x) = φ1 + ∆Φ(x/s), (3)

where ∆Φ = Φm1 − Φm2 and x is the position coordinate where we have defined the diode

to be oriented along the x-axis. If we assume that electrode-1 is grounded, and a voltage is

applied to electrode-2, the potential energy between the electrodes is now

φ(x) = φ1 + (∆Φ − eV )(x/s), (4)

where V is the applied bias. To find the barrier height between an arbitrary metal and

insulator, we need the workfunction of the metal, Φm, and the electron affinity of the

insulator, χins. The barrier height then follows as

φ = Φm − χins. (5)

We show later that the barrier heights are critical in determining the current through an

MIM diode.

The image potential between two electrodes separated by an insulator can be

approximated as (4, 5)

Vim(x) = −0.288s

Kx (s − x)

, (6)

where s and x are in units of nm, and K is the high-frequency dielectric constant of the

insulator.

The total potential energy in the insulator is then

Vtot = φ(x) + Vim(x), (7)

or more explicitly

Vtot = φ1 + (∆Φ − eV )(x/s) + −0.288s

Kx (s − x)

. (8)

Figure 1 shows the potential energy, image potential, and total potential energy for a

symmetric diode with φ1 = φ2 = 1 eV, s = 10m, K = 4, and V = 1 V. If we denote the

Fermi levels in electrode-1 and electrode-2 as EF1 and EF2, respectively, the applied bias is

EF1 − EF2. The image potential is negative and reduces the total maximum potential

barrier. The image potential also smooths out the abrupt corners of the potential energy.

Figure 2 shows the potential energy and total potential energy for the same symmetric

diode as in figure 1 but for varying values of K. As K increases, the area under the

potential energy barrier increases and the potential energy barrier tends towards φ. Thus,

for insulators with smaller dielectric constants, the peak barrier and average barrier heights

decrease, which we show later increases the thermal emission and tunnel currents.

2
Figure 1. Potential energy at 1-V forward bias for a symmetric MIM diode with φ1 = 1 eV,

φ2 = 1 eV, s = 10 nm, K = 4, m = m0, and T = 300 K.

Figure 2. Total potential energy with varying dielectric constant, K, values for the symmetric MIM

diode in figure 1.

2.2 Thermionic Emission-limited Current

The thermionic emission-limited current through an MIM diode is (5)

J = AthT

2

e

−φ

0

1

/kBT



1 − e

−eV/kBT



, (9)

3
where φ

0

1

is the maximum barrier height above the negatively biased electrode, T is the

temperature, and

Ath = 4πmek2

B

/h3, (10)

where m is the electron mass (set to mo throughout this report), kB is Boltzmann’s

constant, and h is Plank’s constant.

From equation 9, we see that the thermionic emission-limited current is exponentially

dependent on φ

0

1

(always referenced to the Fermi level of the negatively biased electrode).

From figure 3, we see that φ

0

1

is constant (set by Φm − χins) when neglecting the image

potential. However, when including the image potential, φ

0

1 decreases with increasing bias.

In fact, at 1-V forward bias, φ

0

1

is nearly 0.2 eV below the no image potential case.

Figure 4 shows the calculated thermionic emission-limited current through a symmetric

MIM diode described in figure 1 with and without the image potential included. The

conclusion here is that the image potential must be included if one hopes to accurately

model the thermionic emission limited current through an MIM diode.

Figure 3. Maximum energy barrier above the negatively biased Fermi level for the forward biased

MIM diode in figure 1.

4
Figure 4. Thermionic emission-limited current through the symmetric MIM diode in figure 1.

2.3 Tunneling-limited Current

The tunnel-limited current through an MIM diode is (4)

J = J0



φ ̄ exp −Atunφ ̄

1

2



− (  ̄φ + eV ) exp h−Atun (  ̄φ + eV )

1

2

i 

,

(11)

where

J0 =

e

2πh(β∆s)

2

, (12)

and the mean barrier height,  ̄φ, above the Fermi level of the negatively biased electrode is

φ ̄ =

1

∆s

Z s2

s1

φ(x)dx, (13)

where s1 and s2 are the positions where the potential energy barrier intersects the Fermi

level of the negatively biased electrode and ∆s = s2 − s1 is the tunneling distance. The

Atun factor is

Atun = (4πβ∆s/h) (2m)

1

2 , (14)

where β is a correction factor given in the appendix of reference 4 (we have set β = 1 in

this report).

In figure 4, thermionic emission-limited current dominates for s = 10 nm. Now let us

explore a symmetric MIM diode with the same parameters as figure 1 but with s = 5 nm.

5
Figure 5 shows the potential energy and total potential energy with the image potential

included. Compared to figure 1 (s = 15 nm), the total potential barrier is significantly

reduced. Figure 6 shows that the maximum potential barrier height is higher than the

average potential barrier height for each applied bias. Comparing figure 6 to figure 2, we

see that the maximum barrier height is reduced as s is reduced due to the larger

contribution of the image potential. Figure 7 shows the absolute value of tunnel-limited,

thermal-emission limited, and total current versus applied bias. At low bias, the thermal

emission-limited current dominates. The tunneling-limited current increases rapidly with

bias and crosses over the thermal current at higher bias.

Figure 5. Potential energy at 1-V forward bias for a symmetric MIM diode with φ1 = 1 eV,

φ2 = 1 eV, s = 5 nm, K = 4, m = m0, and T = 300 K.

6
Figure 6. Maximum and average barrier height vs. applied bias for the symmetric MIM diode in

figure 5.

Figure 7. Absolute value of tunnel-limited, thermal emission-limited, and total currents vs. applied

bias for the symmetric MIM diode in figure 5.

Next we consider a highly asymmetric diode with one nearly ohmic metal-insulator

junction. In this case, we assume φ1 = 0.2 eV, φ2 = 1.2 eV, s = 5 nm, K = 4, and

T = 300 K. Figure 8 shows the absolute value of the current-density components. There

are three important characteristics in figure 8 that are important. First, the tunneling

current is not nearly as asymmetric as the thermal current; second, the tunnel current

dominates the thermal current for all negative voltages but only for small positive voltages;

7
and third, the tunneling-limited current acts as a diode in the reverse polarity compared to

the thermal-limited current. This second point may not pose a problem, as the diode will

function at lower AC (terahertz) bias. However, the tunnel current must be made more

asymmetric for the MIM structure to act as a diode. The third point, sometimes referred

to as “rectification reversal” is due to the switching between Fowler-Nordheim and direct

tunneling. Rectification reversal can be explained by figure 10, where the average barrier

height and tunneling distance have offset each other, which leads to a reversed polarity

rectification, and in general, a more symmetric I-V characteristic. Figure 9 show the

current density for the same parameters in figure 8, but with φ2 = 2.2 eV. In this case, the

tunneling-limited current clearly dominates (thermal current is not shown), but the I-V

characteristic is still quite symmetric.

Figure 8. Absolute value of tunnel-limited, thermal emission-limited, and total currents vs. applied

bias for an asymmetric MIM diode with φ1 = 0.2 eV, φ2 = 1.2 eV, s = 5 nm, K = 4,

m = m0, and T = 300 K.

8
Figure 9. Absolute value of tunnel-limited, thermal emission-limited, and total currents vs. applied

bias for an asymmetric MIM diode with φ1 = 0.2 eV, φ2 = 2.2 eV, s =5 nm, K = 4, m = m0,

and T = 300 K.

Figure 10. Maximum barrier height and tunneling distance vs. applied bias for the asymmetric MIM

diode in figure 9.

3. MIM Diode Fabrication

MIM diodes were designed and fabricated for the purpose of validating the model discussed

in the previous sections. Simple column structures composed of a blanket bottom metal

layer, blanket insulator layer, and a square-patterned top metal layer were chosen due to

9
their ease of fabrication. An image of the photolithographic mask design for the column

structures is shown in figure 11.

Figure 11. Simple square pillar structures were used as MIM diodes based on niobium (Nb)/niobium

pentoxide (Nb2O5)/x material stacks, where x designates copper (Cu), silver (Ag), and gold

(Au) for different device sets. The square pillars had dimensions of 60 μm × 60 μm, and

were drawn in AutoCAD.

The Nb/Nb2O5 material system was chosen due to this combination’s reported low barrier

height (6, 7), which provides a low turn-on voltage in a MIM diode. Previously reported

measurements have specified the barrier height of the Nb/Nb2O5 junction to be between

133 to 300 meV (6, 7). The top metals were chosen for their relatively high work function

difference with respect to Nb. A high work function difference between the two metal

layers is considered the primary mechanism for high asymmetry and large nonlinearity in

MIM diode I-V characteristics (3, 8). It has already been reported that Cu, Ag, and Au

have relatively good asymmetric I-V characteristics when acting as the second metal layer

in a Nb/Nb2O5/x MIM diode, where x represents one of the three metals listed (7).

10
A blanket 80-nm-thick Nb metal film was deposited via a room-temperature sputter

process on top of a 500-μm-thick silicon (Si) substrate. Next, 15-nm of Nb2O5 was grown

via an electrochemical (anodic) oxidation process on top of the Nb metal film, with

approximately 5 nm of native Nb2O5 already present due to the exposure to ambient air

after the Nb film deposition. The surface roughness of the as-deposited Nb film was

measured to be 0.9 nm (average, root mean square [RMS]); and after the Nb2O5 films were

electrochemically grown, the surface roughness was measured to be 1.1 nm (average, RMS).

The Nb2O5 thin films were provided by collaborators at the National Renewable Energy

Laboratory (NREL) in Golden, CO. A WITec Alpha 300 A atomic force microscope

(AFM) was used to characterize the surface roughness of the Nb and Nb2O5 layers

(measurements performed at NREL). The thickness of the Nb metal film was determined

via profilometry, while the thickness of the Nb2O5 film was determined using ellipsometry,

transmission electron microscopy (TEM) cross-sections, and x-ray reflectivity.

The top metals were photolithographically patterned using a lift-off process. For model

validation purposes, the Au, Cu, and Ag top metals were deposited on separate sample

sets. The geometric structures were photo-patterned using the AZ5214E photoresist and a

Karl Suss MA6 photoaligner. Au and Ag were deposited using a CHA electron-beam

evaporation system, with a deposition rate of 2  ̊A/s. Cu was deposited using a Kurt Lesker

PVD75 thermal evaporation system, with a deposition rate of 3  ̊A/s. For each of the three

top metals, approximately 1,600  ̊A was deposited on top of the Nb2O5 layer. The thickness

of the top metal films was determined through the use of profilometry. Figure 12 provides

an example of an optical microscopic view (from the top) of a device set fabricated using

the process described in this section, while figure 13 provides a cartoon image of a

completed MIM diode stack.

4. Comparison to Experimental Measurements

The fabricated devices were measured with a Keithley 4200 Semiconductor

Characterization System connected to a Desert Cryogenic Probestation. The experimental

measurements were done at a temperature of 298 K and vacuum pressures below 1 × 10−4

torr. The electrical characterization involved a dual voltage sweep from −1 to 1 V and

back in voltage steps of 1 × 10−2 V on the top electrode while holding the bottom electrode

constant relative to ground. A 2.0-s hold time was used prior to the first current

measurement on each sweep to allow devices to settle.

11
Figure 12. The image shown is an example of MIM diodes fabricated using the process described in

this section.

The resulting current was then extracted and used for fitting. During the fitting process,

parameters φ1 and φ2 were modified in order to produce a line of best fit. Parameters T

and s were set to values of 298 K and 18 nm (to account for 15 nm of grown oxide and

5 nm of low-quality native oxide), respectively. On the other hand, K was experimentally

determined for each individual I-V measurement from the slope of the ln σ vs. EkB ∗ T

graph assuming electrode-limited conduction, where σ is the conductivity and E is the

electric field (9). If the value of K was experimentally determined to be less than 1, its

value was set to 1 in the fitting process.

12
Figure 13. In this cartoon, a top and cut-away view of the MIM tunnel diodes fabricated are provided

with the material stack thicknesses and dimensions of the pillar structure.

The results of the three different devices composed of Nb/Nb2O5/x, where x can be Cu,

Ag, or Au are shown in figures 14, 15, and 16. The values of the modeling parameters used

are given in table 1. Nb is the bottom electrode in all the experiments performed.



























	




















































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14
Table 1. Best-fit MIM modeling parameters.

M1/I/M2 K φ1 (eV) φ2 (eV)

Nb/Nb2O5/Cu 1.36 0.55 0.7

Nb/Nb2O5/Ag 1.00 0.77 0.94

Nb/Nb2O5/Au 1.60 0.66 0.81

From the fitting, we can see that there are slight differences between the experiment and

theoretical data, though the model gives a good match to the experimental behaviors in

general. The differences are primarily detected in the positive bias response, which is

mostly determined by the Nb/Nb2O5 barrier interface φ1. This suggests that there are

parameters or non-idealities in the device unaccounted for by the modeling. Ideas for such

non-idealities include trapped charges in the oxide and noise introduced from fabrication

steps.

5. Conclusions and Future Work

In the present work, we fabricated MIM diodes, electrically tested them, and used

modeling to extract high-frequency dielectric constants and metal-insulator barrier heights.

In addition, the modeling gave insight into the design space necessary to produce

asymmetric tunneling I-V characteristics. Specifically, thermionic current was shown to be

limited by large barrier heights while tunneling current was shown to dominate when using

thin (≈ 5 nm) dielectrics. We showed that the metal workfunctions must also be highly

asymmetric in order to produce asymmetric I-V curves. Asymmetric I-V characteristics

dominated by quantum-mechanical tunneling were shown to be difficult to achieve because

of the rectification reversal effect.

In future work, we plan on verifying the electrically extracted barrier heights through

alternative microanalysis techniques and by investigating other material systems. Surface

photovoltage spectroscopy, photoemission, and thermal emission measurement methods will

be used to confirm the logarithmic electrical-conductivity measurements collected in this

report. The results from these methods will be inserted into the current model to increase

accuracy and provide additional insight into the electrical properties of MIM diodes.

Additionally, future MIM diodes will be fabricated using thinner dielectric films with

thicknesses ranging from 2 to 5 nm. This will allow us to investigate the contributions of

both tunneling and thermionic emission. Low temperature and graded temperature

measurements will provide insight to the contribution ratio between the two emission types

in MIM diodes. Temperature measurements and calculations will provide the ability to

15
further extract metal-insulator barrier heights. Different metal contact combinations and

other metals will be reviewed to determine possible material systems that provide even

higher asymmetric MIM diode I-V characteristics than current MIM diode devices. Besides

the Nb, Cu, Ag, and Au reviewed in this report, platinum (Pt), tantalum (Ta), nickel (Ni),

and chromium (Cr) may also be investigated.

16
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[2] Fumeaux, C.; Herrmann, W.; Kneubhl, F. K.; Rothuizentitle, H. Nanometer Thin-film

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Technology 1998, 39 (3), 123–183.

[3] Berland, B. Photovoltaic Technologies Beyond the Horizon: Optical Rectenna Solar Cell;

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[6] Shirakashi, Jun-ichi; Matsumoto, Kazuhiko; Miura, Naruhisa; Konagai, Makoto. Nb/Nb

Oxide-based Planar-type Metal/Insulator/Metal (MIM) Diodes Fabricated by Atomic

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[7] Periasamy, Prakash; Berry, Joseph J.; Dameron, Arrelaine A.; Bergeson, Jeremy D.;

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Materials 2011, 23 (27), 3080–3085.

[8] Krishnan, S.; La Rosa, H.; Stefanakos, E.; Bhansali, S.; Buckle, K. Design and Development of Batch Fabricatable Metal-Insulator-Metal Diode and Microstrip Slot Antenna

as Rectenna Elements. Sensors and Actuators A: Physical 2008, 142 (1), 40–47.

[9] Simmons, John G. Poole-Frenkel Effect and Schottky Effect in Metal-Insulator-Metal

Systems. Phys. Rev. March 1967, 155, 657–660.

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18

NO. OF 

COPIES ORGANIZATION 

1 ADMNSTR 

ELECT DEFNS TECHL INFO CTR 

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1 CD OFC OF THE SECY OF DEFNS 

 ATTN ODDRE (R&AT) 

 THE PENTAGON 

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1 US ARMY RSRCH DEV AND ENGRG 

 CMND 

 ARMAMENT RSRCH DEV & ENGRG 

 CTR 

 ARMAMENT ENGRG & TECHNLGY 

 CTR 

 ATTN AMSRD AAR AEF T J MATTS 

 BLDG 305 

 ABERDEEN PROVING GROUND MD 

 21005-5001

1 US ARMY ARDEC 

 ATTN AMSRD AAR AEE P 

 C HAINES 

 BLDG 25 

 PICATINNY ARSENAL NJ 07806-5000

1 US ARMY ARDEC 

 ATTN AMSRD AAR AEM C 

 A MARSTON 

 BLDG 61S 

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3 US ARMY ARDEC 

 ATTN AMSRD AAR AEM L 

 S GILMAN 

 ATTN AMSRD AAR AEP F 

 O NGUYEN 

 ATTN AMSRD AAR AEP F S SHRI 

 BLDG 65S 

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1 US ARMY INFO SYS ENGRG CMND 

ATTN AMSEL IE TD A RIVERA

 FT HUACHUCA AZ 85613-5300

1 COMMANDER 

 US ARMY RDECOM 

 ATTN AMSRD AMR 

 W C MCCORKLE 

5400 FOWLER RD

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NO. OF 

COPIES ORGANIZATION 

1 US GOVERNMENT PRINT OFF 

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 WASHINGTON DC 20402 

18 US ARMY RSRCH LAB 

 ATTN IMNE ALC HRR MAIL & 

 RECORDS MGMT 

 ATTN RDRL SER L O NAYFEH 

 ATTN RDRL CIO LL TECHL LIB 

 ATTN RDRL CIO MT TECHL PUB 

 ATTN RDRL SER E P AMIRTHARAJ 

 ATTN RDRL SER E F CROWNE 

 ATTN RDRL SER E G BIRDWELL 

ATTN RDRL SER E P SHAH

 ATTN RDRL SER E T O’REGAN 

 (5 COPIES)

 ATTN RDRL SER E R DEL ROSARIO 

ATTN RDRL SER E T IVANOV

ATTN RDRL SER L M CHIN

ATTN RDRL SER L M DUBEY

 ATTN RDRL SER L M ERVIN 

ADELPHI MD 20783-1197

TOTAL: 29 (27 HCS, 1 ELECT, 1 CD)