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Center for Electronics and

Electrical Engineering

Technical

Progress

Bulletin

Covering Center Programs,

October - December ld84 with

1985 CEEE Events Calendar

June 1985

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899

NO. 85-31 81

1985
INTRODUCTION TO JUNE 1 985 ISSUE OF THE CEEE TECHNICAL PROGRESS BULLETIN

This is the ninth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. This issue of the CEEE Technical Progress Bulletin covers

the fourth quarter of calendar year 1984.

Organization of Bulletin ; This issue contains abstracts for all Center papers re- leased for publication by NBS in the quarter and citations and abstracts for Center

papers published in the quarter. Entries are arranged by technical topic as identified in the table of contents and alphabetically by first author under each subheading within each topic. Unpublished papers appear under the subheading "Released for

Publication”. Papers published in the quarter appear under the subheading "Recently

Published". Following each abstract is the telephone number of the individual to

contact for more information on the topic; unless otherwise noted, this person is

the first author. This issue also includes a calendar of Center conferences and

workshops now planned for calendar year 1985, an announcement of newly released standard reference materials, and a list of sponsors of the work.

Center for Electronics and Electrical Engineering ; Center programs provide national

reference standards, measurement methods, supporting theory and data, and traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U. S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor Technology Program, carried out by the Semiconductor Materials and Processes and Semiconductor Devices and Circuits Divisions in Gaithersburg, MD, and the Signals and Systems

Metrology Program, carried out by the Electrosystems Division in Gaithersburg and the

Electromagnetic Fields and Electromagnetic Technology Divisions in Boulder, CO. Key

contacts in the Center are given on the back cover; readers are encouraged to contact

any of these individuals for further information. To request a subscription or for more information on the Bulletin write to CEEE Technical Progress Bulletin, National

Bureau of Standards, Metrology Building, Room B-358, Gaithersburg, MD 20899 or call

(301) 921-3357.

Center sponsors : The Center Programs are sponsored by the National Bureau of Standards and a number of other organizations, in both the Federal and private sectors;

these are identified on page 27.

Note on Publication Lists : Guides to earlier as well as recent work are the publication lists covering the work of each division. These lists are revised and reissued on an approximately annual basis and are available from the originating division

[publications from the Semiconductor Technology Program are covered in a single list,

available from either Semiconductor Division] .
CEEE Technical Progress Bulletin - June 85 Page 3

Insulators and Interfaces , cont' d.

rials and for the calibration of reference standards for thin film thickness

and refractive index.

[(301) 921-3625]

Dimensional Metrology

Recently Published

Nyyssonen, D. , Optical Linewidth Measurement on Patterned Metal Layers

,

Proc. SP IE - The International Society

tor Optical Engineering, 480, Integrated Circuit Metrology II, pp. 2-8

[paper given at Conference, Arlington,

VA, May 2-3, 1984].

In a previous paper, a waveguide model

was developed for the imaging of

micrometer-sized lines patterned in

thick layers of dielectric materials

(silicon dioxide) with application to

linewidth measurement on integratedcircuit wafers. This paper describes

the extension of this work to metals

characterized by their complex index of

refraction, n + iK, as well as the inclusion of a sublayer such as a silicon

dioxide insulating layer. This extension allows the modeling of optical

imaging and linewidth measurement on metal-on-silicon (MOS) structures. It

is shown that the image structure for

metals at and near focus is different

from that for dielectrics. Thick and

thin layer (less than 200 nm) imaging is

compared. Experimental image profiles

of metal lines at and near focus are also shown. The experimental data were

obtained from a bright-field microscope

using a laser source (530 nm) and con- trolled spatial coherence.

[(301) 921-3786]

Gallium Arsenide Materials

Released for Publication

Imhoff, E.A., Bell, M.I., and Forman,

R . A . , Hot Phofoluminescence in Beryllium-Doped Gallium Arsenide.

Hot photoluminecence in GaAs : Be is re- ported for the first time. The emission

from a sample with p = 6.5 x 10 16 cm3

at 1 0 K consists of a shoulder at 1.803

± 0.002 eV follcwed by a series of broad

peaks at 1.781, 1.742, 1.704, 1 .666, and

1.628 eV (all ±0.003 eV) . Analysis of

the results supports a decay model involving hot electron-acceptor recombination and implies an L-T splitting of

320±4 meV in the conduction band at 0 K.

[Contact: Bell, (301) 921-3786]

Recently Published

Seabaugh, A.C., Bell, M.I., Larrabee, R.

D. , and Oliver, J.D. , High-Frequency

Transient-Resistance Spectroscopy of

Deep Levels in Semi-Insulated GaAs,

Semi -Insulating III-V Materials: Kahneeta 1984, D.C. Look and J.S. Blakemore, Eds., pp. 437-445 (Shiva Publishing, Ltd., Cheshire, England, 1984).

A new photoinduced transient-resistance

technique is used to characterize deep

levels in semi-insulating GaAs. In this

technique, termed photoresistance deeplevel transient spectroscopy (PR-DLTS), an optical pulse is used to generate

excess carriers which are trapped by

deep levels in the material. Hie ac resistance of the specimen is monitored,

and the resistance transient which oc- curs after the illumination ends is

signal processed in the same way as the

capacitance transient in conventional

DLTS . Comparison of this technique wi th

the dc current- transient measurement,

photoinduced transient spectroscopy

(PITS), shows that it is sensitive to

the same trapping/de trapping phenomena.

PR-DLTS data for the Cr-related deep

level is consistent with published DLTS

results. Results are reported for materials grown by the horizontal Bridgman

method and by the liquid-encapsulated

Czochralski technique, both wi th is 1 without chromium doping. Ninet'<n ; - imens from ten different manuf.i -• ;r*-r are compared.

[(301) 921-3625]
Page 4 CEEE Technical Progress Bulletin - June 85

Integrated Circuit Test Structures

Released for Publication

Cassard, J.M., KEYS: A Computer Procedure Which Characterizes a Chip,

Wafer, or Lot Using SUXES and STAT2

The computer procedure KEYS links SUXES,

SPICE, and STAT2 . Given data points for

individual devices, SUXES obtains the

model parameters for SPICE which predicts the behavior of an individual

device or an entire circuit. After

analyzing each test chip on a wafer,

STAT2 determines the correlation coefficients and generates wafer maps of

selected parameters. These wafer maps

are valuable to the designer, modeler,

and process engineer.

The entire package accomplishes the

following: (1 ) standardizes the technique of running SUXES and SPICE; (2)

simulates and plots the characteristic

curves; (3) simulates and plots the

results of an optional dynamic circuit

(for example, a ring oscillator); (4)

does steps (2) and (3) for every test

chip on each wafer; (5) summarizes the

results from each chip, each wafer, and

the lot; (6) rank-orders the parameters

for each wafer according to their corre- lation coefficients with respect to

chosen parameters; and (7) generates

wafer maps of several quantities. To

illustrate the capabilities of KEYS, an example using CMOS technology is given.

[(301 ) 921-3621]

Linholm, L.W., Yen, D. , and Cresswell,

M.W., Electrical Linewidth Measurement in the Near- and Sub-Micron Linewidth Region.

The measurement accuracy of the cross- bridge resistor test structure and test

method has been compared to well-characterized optical measurements for samples

with near-micron and sub-micron design

dimensions patterned in polysilicon

films. Results are presented which show

that the electrical measurements agree

with the corresponding optical measurements to within the respective uncer- tainties of both measurements.

[(301) 921-3541]

Recently Published

Carver, G.P., and Wachnik, R.A.,

TERRY-2: A Test Chip for Characterization of the Performance of Buried-Channel Charge-Coupled Device (CCD) Imagers, NBSIR 84-2894 (December 1984).

Test chip TERRY-2 is intended to be used

for characterization of the performance

of buried-channel charge coupled device

(CCD) imagers fabricated with a doublepolysilicon-gate process which includes

several implants. Test structures in

TERRY- 2 address two areas judged to be

key ones for COD performance: device

parameters and process parameters, including material properties. TERRY- 2 is

a modular chip designed for automatic

testing; selected devices can be wire

bonded for testing various environmental

effects; a region containing test structures can be thinned in the same manner

as a back-side-illuminated CCD would be;

and large devices can be beveled for

spreading resistance or physical analysis. This report describes the features

of TERRY-2, the test structure designs,

and the measurement procedures. The

technique of charge pumping for measuring interface state density is discussed

in an appendix.

[(301) 921-3786]

Process and Device Modeling

Released for Publication

Bennett, H.S., Band Structure and

Density of States Changes for Doped

Gallium Arsenide, to be published in

the Technical Program of Topical Conference on Basic Optical Properties of

Materials, May 7-9, 1985, Gaithersburg,

Maryland.

Optical absorption measurements on doped

GaAs are interpreted in terms of

distorted band structures. Such data

provide values for the many-body

interactions which are essential in
CEEE Technical Progress Bulletin - June 85 Page 5

Process and Device Modeling , cont'd.

calculations on the operation of lasers

and opto-electronic devices.

[(301) 921-3541]

Bennett, H . S . , Modeling GaAs/AlGaAs

Devices: A Critical Reviews

Device models for GaAs devices and

GaAs/AlGaAs heterostructures are much

less advanced than those for silicon

devices. This paper critically reviews

recent advances in the modeling of

GaAs/ AlGaAs devices. It is based on the

examination of five selected device

models which contain features common to

the majority of device models for heterostructure bipolar and field effect

transistors. Areas requiring improved

measurement techniques on processed GaAs

and improved physical concepts for

GaAs/ AlGaAs device models are identified.

[(301) 921-3541]

Bennett, H.S., and Fuoss, D.E., Improved Physics for Simulating Submicron

Bipolar Devices.

The conventional device physics in most

numerical simulations of bipolar transistors may not predict correctly the

measured electrical performance of shallow, heavily doped emitters and bases.

This paper presents improved device

physics for numerical simulations of

solid-state devices with densities up to

about 3 x 1

0

2 0 cm

- ^ and with junction

depths as small as 0.1 pm. This improved device physics pertains to bandgap narrowing, effective intrinsic car- rier concentrations, carrier mobilities,

and lifetimes. When this improved device physics is incorporated into device

analysis codes such as SEDAN and then

used to compute the electrical performance of npn transistors, the predicted

values agree very well with the measured

values of the current-voltage characteristics and dc common emitter gains for

junction depths between 10 and 0.16 pm.

[(301) 921-3541]

Recently Published

Albers, J. , Wilson, C.L., and Blue,

J.L. , The Effect of Bevel Angle and

Number of Points on Spreading Resistance Data Analysis, Extended

Abstracts of the Electrochemical

Society, 84-2, p. 727 (October 1984).

The semiconductor equations are used to

obtain the carrier profile along a beveled structure. The spreading resistance is calculated on a scale much

finer than the present experimental

resolution of the technique. Spreading

resistance algorithms are used on data

spaced at the present experimental resolution. The difference between atomic

and carrier densities along the bevel

and the errors inherent in finite-layer

algorithms are investigated. This is

meant to provide insight into limitations of spreading resistance due to

these sources.

[(301) 921-3621]

Bennett, H.S., Dependence of Minority

Carrier Lifetime on Doping Density in

Heavily Doped Silicon, Solid-State

Electronics, 27, pp. 893-904 (October

1984) .

The minority carriers determine the

essential electrical characteristics of

bipolar devices and bipolar- like parasitic paths in field effect devices.

The electrical behavior of such devices

is frequently described by detai led

device models. Among the several input

parameters for detailed device model s

,

the dependences of the minority carrier

lifetimes as functions of doping density

have great uncertainty. Recent resul

from scattering theory for bandgap nar- rowing and Fermi energy as functions of

doping density are included in the

Shockley-Read- Ha 11 expressions for •in- minority carrier lifetimes. The predicted lifetimes are concave t i :> ove with increasing doping for those processing conditions under wha<h the

doping and defect densities are not

correlated strongly, whereas empirical
Page 6 CEEE Technical Progress Bulletin - June 85

Process and Device Modeling , cont'd.

expressions for the Shockley-Read-Hall

lifetimes are convex with increasing

doping density. Quantitative comparisons between theory and experiment are

not possible because measurements of

lifetime versus doping density have

uncertainties associated with the separation of the Shockley-Read-Hall and

Auger recombination mechanisms. A major

finding of this research is that improved measurements are needed for

minority carrier lifetime in heavily

doped silicon as a function of doping

density.

[ (301 ) 921-3541]

Berkowitz, H.L. , and Albers, J. , Simplified Method for Calculating FourProbe Resistances on Nonuniform Structures, Extended Abstracts of the

Electrochemical Society, 84-2, p. 751

(October 1984).

A simple method for calculating the

four-probe resistance as an integral

involving only the kernel of the correction factor integral (and independent of

the probe radius and the probe-current

density) is presented. Analytic expressions are derived for uniform layers and

are investigated as a function of the

probe spacing. For nonuniform resistivity structures, a simple numerical procedure is presented for the evaluation

of the four-probe resistance and is

compared with more extensive techniques.

[Contact: Albers, (301) 921-3621]

Galloway, K. F., Measurements for VLSI

Models, Proceedings of the Second

International Workshop on the Physics

of Semiconductor Devices, S.C. Jain and

S. Radhakrishna, Eds. (Tata McGrawHill, New Delhi, 1984), pp. 98-1 05.

The complexity of VLSI makes an experimental approach to design and fabrication unrealistic. Accurate, computerbased models for simulating processes,

devices, and circuits are required to

competitively develop VLSI technologies.

The effectiveness of these models is

often limited by the accuracy of the

physical parameters used as input for

the simulations. This paper summarizes

results from two recent projects on measurement technology for obtaining

parameters for VLSI models to illustrate

the research in this area at the National Bureau of Standards.

[(301) 921-3541]

Wilson, C.L., and Blue, J.L. , TwoDimensional Modeling of N-Channel

MOSFETs Including Radiation-Induced

Interface and Oxide Charge, IEEE

Transactions on Nuclear Science, NS-31,

No. 6, pp. 1448-1 452 (December 1984).

A model of the radiation-induced charges

produced in n-channel MOSFETs is presented. The model is applicable for the

unirradiated device and accurately predicts device characteristics for doses

of up to 500 krad(Si). The model is

verified by comparing the results obtained with the model to n-channel

MOSFETs for doses of 0, 10, 50, 100, and

500 krad(Si). Detailed comparison of

the model with a 7.8-ym channel length

transistor, to eliminate short-channel

effects, shews excellent agreement between the model and measured currentvoltage characteristics in the subthreshold region, the triode region, and

the saturation region. Analysis of the

model parameters shows that the oxide

charge and interface trap density are

linear with dose in these devices. The

mobility decrease used in the model can best be accounted for by the combined

effects of scattering from oxide and

interface charge in the channel.

[(301) 921-3541]

Wilson, C.L., Roitman, P. , Marchiando,

J.F., and Blue, J.L. , Modeling of the

Process Sensitivity of Submicron Silicon MOSFETs, Extended Abstracts of

the Electrochemical Society, 84-2, p.

709 (October 1984).

When short-channel MOSFET transistor

models are compared to experimental
CEEE Technical Progress Bulletin - June 85 Page 7

Process and Device Modeling , cont'd.

data, the uncertainty in the process

models used as inputs often requires

that some of the process model parameters be adjusted to fit the data. In

this work the process sensitivity of the

source-drain junction is modeled. We

find that sensitivity of the saturated

drain current to the source-drain junction depth increases sharply at some critical value of the junction depth.

This value of junction depth is reached

when the junction depth is equal to the

zero biased depletion region width. As

the contribution of the source drain

junction to the sum of the depletion

width and the junction depth becomes

significant, the total change in channel

field caused by the source-drain junction is a maximum.

[(301 ) 921-3541]

Radiation Effects

Recently Published

Gaitan, M., and Russell, T.J. , Measurement of Radiation-Induced Interface

Traps Using MOSFETs , IEEE Transactions on Nuclear Science, NS-31, No. 6,

pp. 1 256-1260 (December 1984).

The effect of gamma irradiation on the

density of Si0

2 /Si interface traps was measured using n- and p-channel MOSFETs.

The density of traps was measured by a charge pumping measurement method and by

a technique based on the slope of the

transistor In (I d )-Vg characteristics in weak inversion. An increase in

the density of interface traps with dose

is observed with a greater increase just

above compared to just below the center

of the silicon bandgap.

[(301 ) 921-3621]

Galloway, K.F., Gaitan, M., and Russell,

T.J., A Simple Model for Separating

Interface and Oxide Charge Effects in

MOS Device Characteristics, IEEE

Transactions on Nuclear Science, NS-31,

No. 6, pp. 1497-1501 (December 1984).

A simple model to describe radiation

effects on MOSFET electrical characteristics is presented. The key assumption

is that mobility degradation in an en- hancement mode MOSFET is predominantly

due to charged interface traps. Model

predictions are compared with measured

values of interface trap density and

device I-V curves.

[(301) 921-3541]

FAST SIGNAL ACQUISITION, PROCESSING

AND TRANSMISSION

Waveform Metrology

Released for Publication

Gans, W.L., Picosecond Pulse Waveform

Error Analysis at NBS, to be published in the forthcoming special issue

of the Proceedings of the IEEE on Radio

Measurement Methods and Standards (invited paper) [related version to be

published in the Proceedings of the

IMTC/85 Instrumentation/Measurement

Technology Conference, Tampa, FL, March

21-22, 1985].

The primary system used at NBS, Boulder

to measure fast (picosecond-nanosecond

range) , repetitive, electrical pulse

parameters consists essentially of a wideband (dc-18 GHz) sampling oscilloscope interfaced to a minicomputer.

This paper describes the major calibration and analysis techniques used to

reduce the effects of errors inherent in

this system, both deterministic and

random in nature.

[(303) 497-3538]

Lawton, R.A., Riad, S.M., and Andrews,

J.R., Pulse and Time Domain Measurements, to be published in the forthcoming special issue of the Proceedingof the IEEE on Radio Measurement Methods and Standards (invited paper).

A review of the state of the art and

science of pulse measureme; • including recent advances in th-- u •• real time oscilloscopes, wavef'

corders, equivalent time samplinr ; -
Page B CEEE Technical Progress Bulletin - June 85

Waveform Metrology , cont'd.

loscopes and counter timers in the mea- surement of repetitive and single transient signals. Recent advances in the use of artifact waveform standards and

modern signal analysis techniques to

compensate for measurement distortion

are highlighted. The formation and

progress of an IEEE committee which is

developing a performance standard for

waveform recorders is also described.

[(303) 497-3339]

Recently Published

Lawton, R.A., Nahman, N.S., and Bigelow,

J.M., A Solid-State Reference Waveform Standard, IEEE Transactions on Instrumentation and Measurement, IM-33,

No. 3, pp. 201-205 (September 1984).

A solid-state reference waveform filter

has been developed which uses the

Maxwell-Wagner capacitor effect. This

filter is realized in a stripline con- figuration with a lossy dielectric con- sisting of a thick (5-ym) layer of Si0

2 on Si. The equivalent circuit of this

filter is equivalent to that for previously developed filters which used a lossy liquid dielectric. A preliminary

design has been completed and a filter

fabricated for which the design characteristic impedance, 38 S2, and transition

duration (rise time), 300 ps, agree with

measured values to within 2 and 17 percent, respectively. The temperature

dependence of the filter transition

duration has been estimated from the

temperature dependence of the filter

conductance to be about 1 percent/°C.

[(303) 497-3339]

Cryoelec tronic Metrology

Released for Publication

Kautz, R.L . , Chaos and Thermal Noise

in the rf-Biased Josephson Junction.

The effect of thermal noise on chaotic

behavior in the rf-biased Josephson

junction is studied through digital

simulations.

Metastable chaotic states are Identified

in the limit of zero temperature. Such

states take the form of long-lived transients which suddenly give way to stable

periodic solutions. It is shown that

for an ensemble of systems in the metastable chaotic state, the number of systems continuing to behave chaotically

decays exponentially in time. This

result suggests that a deterministic

system can display behavior analogous to

radioactive decay.

At non-zero temperatures, small amounts

of thermal noise can induce hopping

between two states which correspond to a stable periodic solution and a metastable chaotic solution at zero temperature. The noise associated with thermally induced hopping can exceed that of

chaos and could be confused with chaos

in experimental investigations. At

somewhat higher temperatures, the periodic solution is destabilized to the

point where the system spends virtually

all its time in the metastable chaotic

state, creating thermally induced chaotic behavior. The similarities between

chaotic behavior at zero temperature and

thermally induced chaos are sufficiently

strong that it may be difficult to distinguish the two cases experimentally.

[(303) 497-3391]

McGrath, W.R., Ralsanen, A.V. , Richards,

P.L. , Harris, R.E., and Lloyd, F.L. , Accurate Noise Measurements of Superconducting Quasiparticle Array Mixers,

to be published in the Proceedings of

the 1984 Applied Superconductivity

Conference, San Diego, CA, September 9-

1 3, 1984.

We have constructed a 30-40 GHz test

apparatus which allows us to measure the

noise temperatures of SIS mixers with an accuracy of better than ±1 K. This is a factor of six improvement over earlier

measurements. The most accurate mea- surement made thus far of a mixer which

uses a single Pb-alloy junction yielded

Tm = 9.2 ± 0.9 K; and mixer gain:
CEEE Technical Progress Bulletin - June 85 Page 9

Cryoelectronic Metrology , cont'd.

C M = 0.240 + 0.005. In addition, SIS

mixers employing arrays of N = 1 , 5, 10,

25, and 50 tunnel junctions in series

have been tested. The input power re- quired to saturate the array mixers was

found to increase as N

2 and the gain and

noise temperature of the array mixers

were independent of N.

[Contact: Harris, (303) 497-3210]

Recently Published

Hamilton, C.A., Lloyd, F.L. , and Kautz,

R .L . , High Speed Superconducting A/D

Converter, Proc. 1984 Government

Microcircuit Applications Conference,

Las Vegas, NV, Nov. 6-8, 1984, pp. 140-

1 43.

Superconducting electronics has demonstrated impressive performance capabilities for small digital systems and analog signal processing applications. One

of the areas where superconductivity

offers a unique advantage is in ultrahigh speed A/D conversion. This paper

will describe the operation and current

status of a 6-bit, 4 gigasample/s A/D

converter which has been developed at

NBS

.

[(303) 497-3740]

McDonald, D.G . , Amplification by the

Phase-Locking Mechanism in a FourJunction SQUID, Applied Physics

Letters, 45, No. 11, pp. 1 243-1245 (1 December 1 984)

.

It is shown that the phase-locking

property of an array of Josephson

junctions can be used as a basis for

amplification. The particular device

simulated is a superconducting quantum

interference device (SQUID) with four

junctions in the loop, rather than the

usual one or two. Novel consequences of

this design are that it allows direct

rather than inductive coupling to the

SQUID and, because of its potentially

compact form, it probably can have a bandwidth well into the gigahertz range,

in agreement with the simulations.

[(303) 497-51 13]

Niemeyer, J. , Hinken, J.H., and Kautz,

R.L., Microwave-Induced ConstantVoltage Steps at One Volt from a Series

Array of Josephson Junctions, Applied

Physics Letters, 45, No. 4, pp. 478-480

(1 5 August 1 984) .

It is demonstrated that a series array

of 1 474 Josephson junctions can produce

quantized voltages up to 1.2 V when

driven by microwaves at 90 GHz in the

absence of a dc bias. This result

brings closer the possibility of a practical Josephson voltage standard at

the 1-V level.

[Contact: Kautz, (303) 497-3391]

Zimmerman, J. E. , Recent Developments

in Self-Contained Cryocoolers for

SQUIDs and Other Low-Power Cryoelectronic Devices, Proc. Tenth International Cryogenic Engineering Conference, Helsinki, Finland, July 31 -August

3, 1984, pp. 13-19.

The particular requirements of refrigeration for very low power cryoelectronic

devices have been addressed only during

the last few years. A number of laboratory prototypes are now near realization, and commercial systems may be

available soon. These include Stirling

and Gi f ford-McMahon machines and a fourstage Joule-Thomson machine, or a combination of one of the former with a final

Joule-Thomson stage to achieve 4 K, and

small liquid-helium cryostats with integral intermittent re-liquefying capability. The most difficult technical problem outstanding is to design reliable,

non-contaminating, miniature compressors

for these machines.

[(303) 497-3901]

Antenna Metrology

Released for Publication

Jesch, R.L. , Measured Vehicular Anten- na Performance.

Power gain radiation pattern t t . .<• antennas mounted in six diff' r<n’

tions on a test vehicle wr-re . i r«-
Page 1

0

CEEE Technical Progress Bulletin - June 85

Antenna Metrology , cont'd.

with and without typical lights and

sirens mounted on the roof. The measurements were performed at frequencies

representing the frequency bands of 25

to 50, 150 to 174, 400 to 512 and 806 to

866 MHz. In addition, special antennas

consisting of three disguised antennas

operating at discrete frequencies of

40.27, 1 62.425, and 416.975 MHz and one slot antenna operating at 413 MHz were

also measured. Plots of power gain

radiation patterns are given for the

mobile antenna mounted in six different

locations on the test vehicle and for

the special antennas. Results showing

the effects of poor grounding characteristics are also included. Recommended

locations for mounting the mobile antennas are given.

[(303) 497-3496]

Newell, A.C., Francis, M.H. , Kremer,

D.P., and Grimm, K.R., Results of

Planar Near Field Testing With Ultralow

Sidelobe Antennas, to be published in

the Proceedings of the North American

Radio Science Meeting and International

I EEE/AP-S Symposium, Vancouver, Canada,

June 17-21, 1985.

An investigation to demonstrate Planar

Near Field (PNF) measurement accuracy

for ultralcw sidelobe antennas is near- ing completion at the National Bureau of

Standards, Boulder, CO. The existing

NBS scanner has been modified to accom- modate antennas up to 1 0m long and 4m

high. Two antennas will be measured as

a part of this research effort. They

are the AWACS (U.S. Airborne Warning and

Control System) and the ULSA (Ultra Low

Sidelobe Antenna) , traveling wave anten- nas which are respectively 8m X 1.5m and

6m X 1m. Results of tests to introduce

controlled NF measurement error confirm

predicted far field (FF) sidelobe accu- racies at the -60dB level. Additional

results show the utility of a new 2-

element probe to extend sidelobe mea- surement accuracy by steering a probe

pattern null in the direction of the

test antenna' s mainbeam.

[(303) 497-3743]

Wittmann, R.C., and Yaghjian, A.D.,

The Receiving Antenna as a Linear Differential Operator: Application to

Spherical Near-Field Scanning.

The general receiving antenna is represented as a linear differential operator

converting the incident field and its

derivatives at a single point in space

(O' ) to the output voltage of the re- ceiving antenna. The coefficients of

the derivatives of the operator are determined explicitly in terms of the

multipole coefficients of the antenna'

s

receiving spectrum (far field) phasereferenced to the point O' . When the

linear operator representation is applied to the special probes used in

spherical near-field measurements, a probe-corrected spherical transmission

formula is revealed that retains the

form and applicability of the nonprobecorrected equations. The new spherical

transmission formula is shown to be

consistent with previous transmission

formulas involving rotational and translational addition theorems.

[(303) 497-3326]

Recently Published

Kanda, M., Transients in a Resistively

Loaded Loop Antenna, Proceedings of

the 1984 International Symposium on Electromagnetic Compatibility, Tokyo,

pp. 286-290 (October 16-18, 1984).

Transient characteristics of a loop

antenna loaded uniformly with a resistive material are analyzed. The current

distribution of the antenna is obtained

by use of a Fourier series expansion

technique. It is found that distortion

of the transient waveforms due to reso- nance of a loop antenna can be reduced

significantly and the received transient

waveforms can be tailored by resistive

loading.

[(303) 497-5320]

Newell, A.C., Francis, M.H. , and Kremer,

D.P., The Determination of Near-Field
CEEE Technical Progress Bulletin - June 85 Page 1

1

Antenna Metrology , cont' d.

Correction Parameters for Circularly

Polarized Probes, Proc. Annual Conference of the Antenna Measurement

Techniques Association, Atlanta, GA,

pp. 3A3-1 - 3A3-29 (October 2-4, 1984).

In order to accurately determine the

far-field of an antenna from near-field

measurements the receiving pattern of

the probe must be known so that probe

correction can be performed. When the

antenna to be tested is circularly polarized, the measurements are more accu- rate and efficient if circularly polarized probes are used. Further efficiency is obtained if one probe is dual

polarized to allow for simultaneous

measurements of both components. A

procedure used by the National Bureau of

Standards for determining the plane-wave

receiving parameters of a dual-mode,

circularly polarized probe is described

herein. First, the on-axis gain of the

probe is determined using the three

antenna extrapolation technique. Second, the on-axis axial ratios and portto-port comparison ratios are determined

for both the probe and source antenna

using a rotating linear horn. Far-field

pattern measurements of both amplitude

and phase are then made for both the

main and cross components. In the com- puter processing of the data, the on- axis results are used to correct for the

non-ideal source antenna polarization,

scale the receiving coefficients, and

correct tor some measurement errors. The plane wave receiving parameters are

determined at equally spaced intervals

in k-space by interpolation of the cor- rected pattern data.

((303) 497-3743]

Wittmann, R.C., Probe Correction in

Spherical Near-FieId Scanning, Viewed

as an Ideal Probe Measuring an Effective Field, 1984 International Symposium Digest, Antennas and Propagation,

Vol. II, pp. 674-677 [paper given at

IEEE Antennas and Propagation Society

Meeting, Boston, MA, June 25-29,

1 984] .

In order to reduce measurement and

computation complexity, most probecorrected, spherical near-field scanning

facilities use a special "symmetric"

probe, the output of which exhibits a sin x — cos X dependence as the probe

is rotated about its axis by an angle x» We show here that such a probe is mathematically equivalent to ideal dipole

probes measuring an effective field.

Computational efficiency and structural

simplicity result, since much of the

effort concerns the calculation of the

effective field, and this may be accom- plished with a no-probe correction algorithm . [(303) 497-3326]

Noise Metrology

Released for Publication

Daywitt, W.C., Broadband Noise Source

Applications, to be published in the

Proceedings of the IMTC/85 Instrumentation/Measurement Technology Conference,

Tampa, FL, March 21-22, 1985.

Accurate noise characterization of am- plifiers and communication systems re- quires the use of thermal noise standards. This note is a brief review of

the use of such standards as a basis for

the measurement of effective input noise

temperature and the G/T of a satellite

earth terminal receiving system.

[(303) 497-3720]

Perera, S., Noise Temperature Measurements at the National Bureau of Standards, to be published in the Proceedings of the IMTC/8 5 Instrumentation/Measurement Technology Conference,

Tampa, FL, March 21-22, 1985.

Thermal noise presents the ultima

limitation in the reception and detection of lew level electromagnetic si

nals. This paper briefly review

physics of thermal noise, devic*-- that

generate noise, and measurement *

•. : to characterize noise source!..

[(303) 497-3546]
Page 1

2

CEEE Technical Progress Bulletin - June 85

Noise Metrology , cont'd.

Wait, D.F., The Impact of Automation

on NBS Noise Temperature Measurements,

to be published in the forthcoming

special issue of the Proceedings of the

IEEE on Radio Measurement Methods and

Standards (invited paper) . The accuracy of calibrating a thermal

noise source using the National Bureau

of Standard's automated radiometer and

cryogenic, primary noise standards is

typically ± 2%, compared with ± 3% for

corresponding services that used manual

radiometers and hot primary standards.

Using the automated radiometer, a noise

source can typically be calibrated at

three frequencies in the time a manual

radiometer requires to calibrate one. The automated radiometer contains a 6-

port ref lec tome ter and noise sources with reflection coefficients as great as

0.3 can be tolerated without significantly affecting the calibration accuracy. Ibis makes it practical to use a single broad-band, coaxial noise standard from 0.03 GHz to 14 GHz. The 6-

port reflectome ter also makes it possible to calibrate sources with connectors

different from the primary standard'

s

without almost no additional accuracy

degradation.

[(303) 497-3610]

Recently Published

Daywitt, W.C., A Preliminary Investigation Into Using the Sun as a Source

for G/T Measurements, NBSIR 84-3015

( August 1 984) . This report describes a preliminary

investigation into determining the solar

flux density, the atmospheric correction

factor, and the star shape correction

factor tor use in G/T measurements above

5 GHz. An estimate of errors is also

included. Preliminary results show: an improved algorithm for determining diffusive and refractive attenuation; a viable technique for estimating the

solar flux density from daily AFSL flux

density measurements and a centimeter/millimeter wave spectrum function;

and the possibility of reducing star

shape correction factor errors by use of an effective solar rf diameter.

[(303) 497-3720]

Microwave and Millimeter-Wave Metrology

Released for Publication

Hoer, C.A., NBS Calibration Services

and Systems, to be published in the

forthcoming special issue of the Proceedings of the IEEE on Radio Measurement Methods and Standards (invited

paper) . This paper gives a brief summary of the

calibration services available at the

Boulder Laboratories of the National

Bureau of Standards for attenuation,

phase shift, impedance, power, and voltage at rf and microwave frequencies.

[(303) 497-3705]

Kamper, R.A., Uncertainty Charts for

RF and Microwave Measurements, to be

published in the forthcoming special

issue of the Proceedings of the IEEE on Radio Measurement Methods and Standards

(invited paper) . The scope of the calibration services

for electrical quantities in the range

of frequency from 0 to 100 GHz that are

available from the National Bureau of

Standards is discussed briefly in a historical context. Some plans for

improved services that will be available

in the near future are noted. Charts

showing the variation of uncertainty

with magnitude over the full range of

the respective calibration services are

presented.

[(303) 497-3535]

Reeve, G.R., and Miller, C.K.S., Current NBS Metrology Capabilities and

Limitations at the Millimeter Wave

Frequencies, to be published in the

Proceedings of the Measurement Science

Conference, Santa Clara, CA, January

1 7-19, 1985.

The National Bureau of Standards (NBS)

establishes national artifact standards

and provides a metrology base for U.S.

industry and technology. In the mi Hi-
CEEE Technical Progress Bulletin - June 85 Page 1

3

Microwave and Mil lime ter-Wave , cont' d.

meter wave frequency spectrum, NBS has

not established all the needs of industry or government for this technology.

It is the intent of this paper to describe the technical demands of responding to the challenges of mi 1 lime ter-wave

technology. A description of the cur- rent capabilities that exist at NBS will

be given for those parameters and frequencies where measurement services

exist. Where novel standards have been

developed, such as the 94 GHz thermal

noise standard, the physical basis for

the standard will be described to indicate the changes from lower frequency

designs and the challenges that had to

be overcome. Limitations in services

and in concepts of standards for providing those services will be described to

indicate the degree of research that

must be undertaken to satisfy future

industrial needs in this evolving technology . [(303) 497-31 31]

Sladek, N. J. , and Jesch, R.L. , Standardization of Coaxial Connectors in

the IEC, to be published in the

forthcoming special issue of the Proceedings of the IEEE on Radio Measurement Methods and Standards (invited

paper) . This article reviews the requirements

and standardization of coaxial connectors in the United States. It details

the standardization of coaxial connectors within the International Electrotechnical Commission (IEC) Subcommittee

SC46D "Connectors for RF Cables." A

list of published IEC connector standards and a list of IEC connectors under

consideration are included.

[Contact: Jesch, (303) 497-3496]

Laser Metrology

Released for Publication

Sanders, A. A., and Case, W.E., Laser

Power and Energy Measurements and the

NBS Laser Measurement Assurance Program

(MAP) , to be published in the Proceedings of the IMTC/85 Instrumentation/Measurement Technical Conference,

Tampa, FL, March 21-22, 1 985.

This paper describes the national standards for laser power and energy mea- surements maintained by the National

Bureau of Standards and how the measurement services based on these standards

are disseminated. Particular emphasis

is devoted to the procedures and instrumentation used in these measurements.

The Laser Measurement Assurance Program

(MAP) is discussed in detail. The paper

will also present a detailed procedure

for the user to choose proper instrumentation and procedures to implement a measurements program in the laboratory.

[(303) 497-5341]

Recently Published

Simpson, P.A., A Computer-Controlled

System for Calibrating Detectors of TEA

Laser Pulses, 22nd Automatic RF Techniques Group Fall 1983 Digest, Albuquerque, New Mexico, November 3-4,

1983, pp. 25-36 (May 1984).

A computer-controlled system for calibrating detectors of TEA laser pulse

energy and waveforms is described. The

operator merely inputs certain pertinent

information about the measurements to be

made and the system automatically performs the measurements and outputs the

results.

[(303) 497-3789]

Simpson, P.A., Johnson, E.G., Jr., an 1 Etzel, S.M., A Calorimeter for Measuring High-Energy Optical Pulses,

NBSIR 84-3008 (October 1984).

Two similar calorimeters for mea laser pulses in the range 1 kJ to 1 k

' are described. The calorimet' are electrically calibrated, < an :>«• operated anywhere from the ultr-ivj ••• to the infrared by selecting l >per

materials for the volume absorl

deflecting mirror. Operation f < > calorimeter is controllel by i hi.

desk-top computer. Ttie • L • r«t
Page 1

4

CEEE Technical Progress Bulletin - June 85

Laser Metrology , cont'd.

basis for the calorimeters is given as are the constructional and operational

details. The computer programs that are

used are included in the appendices.

[(303) 497-3789]

Optical Fiber Metrology

Released for Publication

Yang, S., and Gallawa, R.L., Some

Issues in Optical Fiber Bandwidth Measurement, to be published in the Proceedings of the IMTC/8 5 Instrumentation/Measurement Technology Conference,

Tampa, FL, March 21-22, 1985.

This is a one-page summary of a talk to

be given at IMTC. The talk will discuss

the measurement of optical fiber bandwidth, using methods in common use in

the fiber community. Difficulties and

variabilities will be discussed.

[ (303) 497-3988]

Recently Published

Day, G.W., and Franzen, D.L. , Technical Digest - Symposium on Optical Fiber

Measurements, 1984, NBS Special Publication 683 (October 1984).

This volume contains summaries of 31

papers presented at the Symposium on Optical Fiber Measurements held October

2-3, 1984, at the National Bureau of

Standards, Boulder, Colorado. Subjects

include measurements on singlemode

fiber, multimode fiber, fiber designed

for sensing applications, instrumentation, field measurements, and standards.

[ (303) 497-5204]

Engelsrath, A., Larson, D.R., Phelan,

R . J . , and Franzen, D.L. , Attenuation

of Multimode Fused Silicon Optical

Fibers Cooled to Liquid Helium Temperature, Proc. SP IE - The International

Society for Optical Engineering, 500,

Fiber Optics: Short-Haul and Long-Haul

Measurements and Applications II, pp.

124-130 [paper given at conference, San

Diego, California, August 19-24, 1984].

The feasibility of bringing an optical

signal through an optical fiber to a detection and processing system at

liquid helium temperature was examined.

The attenuation of three commercially

available multimode optical fibers, from

two different manufacturers with different buffer coatings, was measured under

different cooling conditions. It was found that the attenuation depends on

the cooling condition and has hysteresis

effects. Independent of the X tested

(0.4-1.65 ym) the attenuation stayed

below 0.1 dB/m under controlled slow

cooling and under 0.5 dB/m with very

fast cooling. Therefore, optical fibers can be used to bring optical signals

into a liquid-helium-cooled dewar for

detection and processing.

[Contact: Larson (303) 497-3440]

Maisonneuve, J.M., and Gallawa, R.L.,

The Use of Power Transfer Matrices in

Predicting System Loss: Theory and

Experiment, Proc. SPIE - The International Society for Optical Engineering,

500, Fiber Optics: Short-Haul and

Long-Haul Measurements and Applications

II, pp. 88-93 [paper given at conference, San Diego, California, August 19-

24, 1984] .

The phase space diagram for parabolic

and step index fibers leads to a graphic

representation of the bound, leaky, and

refracted rays of ray theory. This

concept is used to predict the attenuation of typical components of local area

networds. The technique uses power

transfer matrices to track the evolution

of power distribution in ray packets.

In particular, we predict and then mea- sure the power transfer of two ray packets for a step index fiber. The comparison is encouraging.

[Contact: Gallawa, (303) 497-3761]

Other Fast Signal Topics

Released for Publication
CEEE Technical Progress Bulletin - June 85 Page 15

Other Fast Signal Topics / cont' d.

Major, J.R., Livingston, E.M., and

Adair, R.T., Automatic Frequency

Response of Frequency Modulated Generators Using the Bessel Null Method, to

be published in the Proceedings of the

2 4th ARFTG Conference, Baltimore, MD,

December 4-6, 1984.

This paper describes a Bessel null technique to measure the frequency response

of a frequency-modulated rf carrier and

a program to automate frequency response

measurements of signal generators with

output frequencies from 0.450 to 2000

MHz. The measurements obtained using

this technique are more accurate than

those obtained by a highly trained technician using a manual system.

Automated measurement of this process is

desirable since the manual method is

subject to the following problems: (1 ) excessive time, (2) error in finding the

null, and (3) lack of assurance that the

null is the first Bessel null. This can

be performed using a system controller,

a spectrum analyzer, a function generator, and a voltmeter [all of which are

compatible and controllable remotely (or

by buss) J

. A major obstacle to automated measurement is the nonlinear relationship of

modulating signal amplitude relative to

the center frequency amplitude of the

carrier. This problem was solved by

obtaining an approximate formula for

this nonlinear curve. Assurance that the null found is the

first Bessel null is provided in the

analysis of a filtered response of the

frequency versus amplitude of the test

signal generator output which is displayed on the spectrum analyzer.

[(303) 497-3149]

Young, M. , and Johnson, E.G. , Redefining the Scratch Standards, to be

published as NBS Technical Note 1080 [a

related paper, Tunable Scratch Standards, authors Young, M, Johnson, E.G.,

E.G. , and Goldgraben, R., was given at

the SPIE 1985 Los Angeles Technical

Symposium on Optical & Electro-Optical

Engineering, Conference on Measurement

and Effects of Surface Defects and

Quality of Polish, and is to be published in the proceedings of that Conference] . The scratch standard (MIL- 0-1 3830A) is a cosmetic standard that is effected by a visual comparison with a set of submasters that are -in turn evaluated by com- parison with a set of master standards.

Both manufacture and certification of

the submasters are somewhat unreliable.

In this paper, we show that the submasters can be classified according to the

relative power scattered at a relatively

small angle. We have designed etched

gratings with which to replace the submasters; these gratings have the appearance of scratches but diffract a broad

peak between 5 and 10 degrees off the

axis of the incident beam. We have

classified some prototypes both by com- parison with the master standards and by

a photoelectric measurement; agreement

between the two methods is good. We

suggest that such gratings be used as the submasters and possibly that they be

classified by a photoelectric rather

than visual measurement.

We have developed apparatus for measuring the scattered light from the artifact as a function of angle, using a silicon photodiode as the detector;

this apparatus and its design considerations are briefly described. We appli^-i

a number of tests to evaluate the performance of this optical system, inc

ing determination of uniformity of illumination, impulse response, and detector linearity.

We also provide a discussion of basic

diffraction theory, which lead • t'a- instrumental conclusion that thof the illuminating beam should b< greater than several hundred t .

• width of the scratch.

[(303) 497-3223]
Page 1

6

CEEE Technical Progress Bulletin - June 85

Other Fast Signal Topics , cont1 d.

Recently Published

Belsher, D.R., McLaughlin, R.H., Repjar,

A.G., and Bussey, H.E., Microwave

Detection of Lost Wells and Unknown

Water-Filled Voids in Coal Mines,

NBSIR 84-3017 (September 1984).

Work on contract H0272007 is summarized

for the period of January 1 979 through

March 1984. The development of improved

antennas usable with both a pulse system or an FM-CW system is described. The

development of a field prototype pulse

sampling system is described. Initial

theoretical work on the problem of dielectric loading of antennas as well as

a study of potential system range is

included.

[Contact: Repjar, (303) 497-5703]

Hill, D.A., Radio Propagation in a Coal Seam and the Inverse Problem,

NBS Journal of Research, 89, No, 5, pp.

3 85-394 ( September-October 1984) [related paper to be published at the

Conference Proceedings of the International Symposium on Antennas and EM

Theory, Beijing, China, August 24-26,

1 985] .

The longwall method of coal mining in

underground coal seams is very efficient

in uniform seams, but coal seam anomalies can make the method unprofitable

and unsafe. This paper describes the

theoretical basis for detection of coal

seam anomalies using medium frequency

(MF) radio transmission over paths on the order of 200 meters in length. The

key to the method is the sensitivity of

the attenuation rate of the coal seam mode of propagation to changes in the

coal seam parameters, such as height or electrical conductivity. From a large

number of transmission paths, the principles of tomography can be used to

reconstruct an image of the seam.

[(303) 497-3472]

Lentner, K. J. , Flach, D.R., and Bell,

B.A., An Automatic AC/DC Thermal

Voltage Converter and AC Voltage Calibration System, NBSIR 84-2973

(November 1984).

An automatic ac/dc difference calibration system is described which uses direct measurement of thermoelement

emfs. In addition to ac/dc difference

testing, the system can be used to measure some important characteristics of

thermoelements, as well as to calibrate

ac voltage calibrators and precision

voltmeters. The system operates over a frequency range from 20 Hz to 100 kHz,

covering the voltage range from 0.5 V to

1 kV. For all voltages the total mea- surement uncertainties expected (including the uncertainty of the specific

reference thermal converters used) were

50 parts per million (ppm) at frequencies from 20 Hz to 20 kHz, inclusive,

and 100 ppm at higher frequencies up to

100 kHz. The results of initial intercomparisons between the new system and

the manual NBS calibration system, using

single-range, coaxial- type, thermal

voltage converters as transfer standards, are reported. The results show

that the agreement between the two systems is better than the uncertainties

originally expected, since the intercomparison of ac/dc differences differed by

no more than 15 ppm.

[(301 ) 921-2727]

Sanders, A. A., Some Trends in Optical

Electronic Metrology, Proceedings of

the 1984 Measurement Science Conference, R.M.S • Queen Mary, Long Beach,

CA, January 19-20, 1984, pp. 27-33.

The use of optical related devices in

high technology is expanding at a dramatic rate. Applications include the

expanding use of optical fibers in telecommunications and sensors, lasers in

industrial processing and medicine,

optical storage devices, directed energy

weapons for defensive purposes, nondestructive testing, -- the list goes on and on. The Optical Electronics Metrology Group of the National Bureau of
CEEE Technical Progress Bulletin - June 85 Page 1

7

Other Fast Signal Topics , cont’d.

Standards has the responsibility for

developing the standards, measurement

data, and methodology infrastructure for

supporting much of this expanding technology. This paper will review some of

the ongoing research conducted by this

Group and some of the perceived important technological applications in this

area for the next few years. It will

discuss Group plans for developing the

measurement infrastructure to support

these innovations. The intent is to

generate a dialogue to improve the

Group's planning process and help sort

out the most pressing priorities for

optical measurements.

[(303) 497-5341 ]

Young, M., Can You Describe Optical

Surface Quality with One or Two Numbers?, Proc. SPIE - The International

Society for Optical Engineering, 406,

Optical Specifications: Components and

Systems, pp. 12-22 [paper given at

conference, April 5-7, 1 983, Arlington,

VA] .

This talk discusses two optical surface

quality standards, total integrated

scatter (TIS) and the scratch and dig

standard (MIL- 0-1 3830A ) . I begin by

using Fourier optics to shew that the

well known expression, It/I(0) = 4

k2 a

2

, which relates scattered power to

rms roughness a, is truly valid only for

certain classes of surfaces. Vector

scattering theory applied to a more

general case shows that in fact optics

can measure only a bandwidth limited

roughness that can be related to scattered power only if the surface statistics are known. For this reason, the

standard should perhaps be regarded as a scattered light standard and not as a surface roughness standard. I conclude

by describing our use of a novel optical

system to develop an objective measurement technique to aid in the manufacture

of the artifacts used to implement the

scratch standard.

[(303) 497-3223]

ELECTRICAL SYSTEMS

Power Systems Metrology

Released for Publication

Van Brunt, R.J. , Production Rates for

Qxyfluorides SOF„, S02

F

2

, and SOF^ in

SFg Corona Discharges

.

The most abundant, long-lived stable

gaseous species generated by corona

discharges in SF gas containing trace

levels of C>2 and H

2 0 are the oxyfluorides SOF , S0

2 F2

' and S0F

4

* Absolute

energy and charge rates-of-produc tion of

these and the minor products SO , ICS,

and C0

2 have been measured at different

total gas pressures from 1 00 kPa to 300

kPa and for discharges of different

current, power, and polarity. The behaviors of the observed production rates

as a function of discharge conditions

and the influence of H

2 0 and 0

2 on oxyfluoride formation are discussed in

terms of a proposed model for SF

& decomposition that is consistent with previous observations of electrical, thermal,

and laser-induced decomposition of SF^

and SF

6

/C>

2 mixtures.

[(301) 921-31 21]

Recently Published

Hillhouse, D.L. , Outline of CCVT Calibration Procedure, EPRI-NBS Prototype

System—Supplement to EPRI Report

EL-690 (Field Calibration System for

CCVTs, April 1978), NBSIR 84-2987

(August 1 984) . This report contains, in outline forn,

the step-by-step procedure for use of

the EPRI-NBS Prototype Field Calibration

System for Coupling Capacitor Volta-j*-

Transformers (CCVTs) in the calibration

of CCVTs in the substation. It wa prepared for the use of EPR I (Kle - tri : Power Research Institute) personnel

Waltz Mill, PA, where the system now resides. It is a supplement to the EPRI

final report (EL-690, April 1978) o

• •• project in which the system was

developed.
Page 1

8

CEEE Technical Progress Bulletin - June 85

Power Systems Metrology , cont' d.

[(301 ) 921-3121]

Pulse Power Metrology

Released for Publication

Hebner, R.E., Measurement Applications, Lecture Notes, Fiber Optic

Tutorial, to be published in the Proceedings of the IEEE Power Engineering

Society, July 14-19, 1985, Vancouver,

B.C.

This paper introduces the physics of

photonic systems used to measure voltage

and currents and some of the engineering

aspects of the systems which must be

considered in their application. Sen- sors based on the Faraday effect, the

Pockels effect, and the Kerr effect as well as those based on mechanical effects are presented. The requirements

imposed on the optical fibers by the

measurement application are discussed.

Selected systems are described to highlight various aspects of the measurement

approach.

[(301 ) 921-3121]

Superconduc tors

Released for Publication

Fickett, F.R., Investigation of a Practical Superconductor with a Copper

Matrix.

In this report we summarize the work

performed on four International Copper

Research Association projects covering a span of about six years. The main goal

of the work was to investigate the insitu superconductors, those produced by

the relatively rapid cooling of a melt

containing essentially non-miscible

components. The component with the

higher melting point precipitates out as small particles during the cooling.

Subsequent drawing of the resulting

boule results in fine filaments of this

material (the superconductor) in the

lower-melting matrix (usually oxygenfree copper or a copper-tin alloy).

[ (303) 497-3785]

Goldfarb, R.B., and Clark, A.F., Hysteretic Losses in NbTi Superconductors.

When subjected to transient magnetic

fields, superconductors exhibit losses.

At low frequencies, most of the dissipation is hysteretic. Hysteresis loops were measured in an axial field for

eight multifilamentary NbTi superconducting wires with different filament sizes

and different ratios of copper- to-superconductor. The full-penetration field

Hp, a function of critical current

density Jc and filament radius, was estimated from the hysteresis loops.

There was good agreement between mea- sured hysteresis and that predicted from

the peak applied field and H

p

. The

estimate of Hp provides a method to

assess Jc

. [(303) 497-3650]

Hong, M. , Maher, D.M., Ellington, M.B.,

Heilman, F., Geballe, T.H., Ekin, J.W.,

and Holthuis, J.T., Further Investigations of the Solid-Liquid Reaction

and High-Field Critical Current Density

in Liquid-Infiltrated Nb-Sn Conductors,

to be published in the Proceedings of

the 1984 Applied Superconductivity Conference, San Diego, CA, September 9-

1 3, 1984.

Superior superconducting properties,

such as high Jc 's and Tc 's, have

been obtained from reacted liquid-infiltrated Nb-Sn composite wires. These

excellent properties are attributed to

the chemistry and structure of the material which is prepared by a unique solid

(Nb)-liquid (Sn) reaction. From heat

capacity measurements, sharp bulk superconducting transitions of the A1 5 phase

occur at 17.2-18 K and the weight fraction of A1 5 in the composite wire is

~23%. Analytical electron microscopy

techniques have shown that: the microstructure of these conductors consists

of alternating large-grain and smallgrain filaments; these two types of
CEEE Technical Progress Bulletin - June 85 Page 1

9

Superconductors , cont1 d.

filaments correspond to BCC Nb(Sn) and

cubic A1 5 Nt)

7 5 ±x Sn

^ 5 +x phases,

respectively; the A1 5 filaments (< 0.5

pm) are chemically homogeneous in terms

of measured X-ray intensity ratios to

within ±7% which implies that x ~ 1.5;

and the A1 5 grains are essentially free

of extended lattice disorder down to a resolution of ~0. 34 nm.

Recent work in which Nb is alloyed with

Ta has shown that these superconducting

properties can be improved upon; e.g. , high overall Jc

' s of ~1.8 x 10^ cm2 at

20 T and 4.2 K have been measured.

Also, the liquid-infiltrated Nb(Ta)-Sn

composites have a damage strain tolerance nearly double that of commercial

bronze-processed Nb-Sn conductors.

[Contact: Ekin, (303) 497-5488]

Recently Published

Clark, A. F. , and Goodrich, L. F.

,

Characterization of a Standard Reference Superconductor for Critical Current and a Summary of Other Standard

Research at MBS, Proceedings of the

Tenth International Cryogenic Engineering Conference, Helsinki, Finland, July

31-August 3, 1984, pp. 433-437.

A standard reference material can be

useful for the calibration of measurement apparatus and interlaboratory com- parison of research results. We have

carefully characterized the first practical superconductor SRM for critical

current and it is now available from NBS

as "Standard Reference Material 1457

Superconducting Critical Current - NbTi

Wire." The selection, characterization,

and statistical analysis of this material will be described. The progress in

other standards research will also be

discussed for large conductor critical

current, ac losses, stability, and critical field.

[(303) 497-3253]

Ekin, J.W., and Hong, M. , Electromechanical and Metallurgical Properties

of Liquid-Infiltration Nb-Ta/Sn Multifilamentary Superconductor, Applied

Physics Letters, 45, No. 3, pp. 297-299

(1 August 1 984) .

Data are presented on the strain dependence of the critical current and critical field of Nb-Ta/Sn superconductors

fabricated by the liquid Sn infiltration

process. The results show that liquid

infiltrated Nb-Ta/Sn superconductors

have several significant advantages over

bronze-process Nb/Sn super conductors:

an overall Jc that is 3-1 0 times higher for magnetic fields in the range 1 3-

20 T, an irreversible (damage) strain

limit twice as large, and a Jc elastic-strain sensitivity less than half as large at fields above ~16 T. These

improved properties are attributed to

several unique characteristics of the

liquid infiltration process: a tough

Nb-Ta matrix, fine equiaxial A1 5 grains,

and a uniform stoichiometric Sn concentration.

[(303) 497-5448]

Magnetic Materials and Measurements

Released for Publication

Goldfarb, R.B., Rao, K.V., and Chen,

H.S., Differences Between Spin

Glasses and Ferroglasses : Pd-Fe-Si.

Near the mul ticri tical point in the

magnetic phase diagram, some alloys that

appear to be simple spin glasses actually have an intermediate ferromagne'

like phase between the h igh- tempera tunparamagnetic and low- temperature spinglass states. The temperature dependences of the imaginary component of ac susceptibility and dc magnetization are presented to illustrate the subtle

experimental differences between •;

’ n glasses and these ferroglasses.

[(303) 497-3650]

Recently Published

Clark, A.F., and Cromar, M., Design of

the NBS Magnetic Monopole Detectors,

Proceedings of the Tl international
I Page 20 CEEE Technical Progress Bulletin - June 85

Magnetic Materials and Meas. , cont'd.

Cryogenic Engineering Conference,

Helsinki, Finland, July 31 -August 3,

1984, pp. 365-368.

Several different configurations of

magnetic monopole detectors have been

built and operated at the National

Bureau of Standards. These have been

designed based on the following

objectives: (1 ) Study of the noise

characteristics; (2) Simplicity and ease

of changing configurations; (3)

Operation in relatively large magnetic

fields; and (4) Optimum detector area. Satisfying these objectives has resulted

in several compromises, but also a flexible and useful apparatus for

studying the behavior of the SQUID - detector loop combination with

particular emphasis on noise sources that can simulate a monopole signal.

Several sources of noise and techniques

tor their elimination will be discussed.

Data from the spectral analysis of the

noise signals is be presented.

[(303) 497-3253]

Cromar, M. , Clark, A.F., and Fickett,

F.R., Monopole Detection Studies at

NBS, Proceedings of the Conference on Monopole Detection by Induction Techniques, Ann Arbor, MI, October 5-9,

1 983, pp. 477-480.

Magnetic monopole detectors have been

under study and evaluation at NBS for

the past year. This paper describes

some of the work. It is the written

version of a brief workshop contribution

made at the MONOPOLE '83 conference held

at the University of Michigan.

[ (303) 497-5375]

Fickett, F.R., Magnetic Measurements,

Calibrations, and Standards: Report on

a Survey, NBSIR 84-3018 (October

1 S84) .

The report summarizes the analysis of

responses to a survey of industrial

needs for magnetic services and re- search.

[(303) 497-3785]

ELECTROMAGNETIC INTERFERENCE

Released for Publication

Bensema, W.D. , Reeve, G.R., and Koepke,

G. , A Multisensor Automated EM Field

Measurement System, to be published

in the Proceedings of the IMTC/85

Ins trumentation/Measurement Technology

Conference, Tampa, FL, March 21-22,

1985.

A system is being developed to monitor

and collect electromagnetic (EM) field

strength at 10 selected locations simultaneously. The system has two modes of

operation: (1 ) for sampling EM fields

that are stationary for times of the

order of 200 ms, and (2) for sampling

changing EM fields with a system resolution of 10 y sec. Sensing elements

consist of three orthogonal dipoles,

each dipole feeding a separate data

input channel for a total of 30 channels. Rf energy is converted to DC by a small diode detector at each dipole.

Several sets of 30 sensing elements each

are planned to cover specific measure- ment regions of amplitude and frequency.

One of the initial sets will use 0.6 cm resistive dipoles; measurements of rf

fields with this set will normally be

taken in the range 100 MHz to 18 GHz,

with an amplitude capability of up to

several hundred volts per meter. Other

sets will range in length up to 5 cm and

may eventually include small loops.

System computer data processing proceeds

in real time and includes computation of

total scalar amplitude at each of 10

probe locations, and statistical

processing of resultant data.

[(303) 497-3465]

Crawford, M.L., Performing EMI /EMC

Evaluation of Electronic Equipment

Using TEM Cells, to be published in

the Proceedings of the RF Technology

Expo, Anaheim, CA, January 25-27,

1985.

This paper summarizes the basic physical
CEEE Technical Progress Bulletin - June 85 Page 21

Electromagnetic Interference , cont'd.

and electrical properties which influence the design, operation and use of a transverse electromagnetic (TEM) cell.

Guidelines are given for using a TEM

cell for both radiated susceptibility

and emissions measurements of electric

components and equipment. The paper

describes the test setups, outlines the

test procedures, step by step, indicating precautions to observe to improve

the repeatability and the limitations

inherent in using TEM cells. Examples

of some applications are then given.

[(303) 497-5497]

Cruz, J.E., and Larsen, E.B., Screenroom Measurements of Antenna Factors,

to be published in the Proceedings of

the IMTC/85 Instrumentation/Measurement

Technology Conference, Tampa, FL, March

21-22, 1985.

The measurement of electromagnetic

fields in a shielded enclosure (screenroom) has serious problems because of

uncertain antenna factors and multipath

reflections from conductive surfaces.

Most electromagnetic interference antennas at NBS are calibrated in a known

field at an open field site using the

standard antenna method. Because these

antenna factors are not necessarily

applicable for making measurements in an enclosed screenroom, the measurement

errors are difficult to determine. This

paper presents the results of antenna

factors determined in a screenroom using

the two-antenna method. These antenna

factors are compared with antenna factors determined at an open field site

and in an anechoic chamber. Experimental data are presented to show the variability of antenna factor as a function

of frequency and location in the screenroom thereby providing an example of

errorbounds.

[(303) 497-3763]

FitzGerrell, R.G . , Site Attenuation,

to be published in the Proceedings of

the North American Radio Science Meeting and the International IEEE/AP-S

Symposium, Vancouver, B.C., June 17-21,

1 985.

Site attenuation is defined as the minimum relative insertion loss between two

polarization-matched antennas located on

a test site when one antenna is moved

vertically over a specified height

range. The following parameters must

also be specified: separation distance

between the two antennas, measured horizontally; antenna type and polarization;

and impedance of the receiving and

transmitting systems attached to the

antenna terminals.

Site attenuation is a measure of performance of an open test site used to

determine the levels of emissions, usu- ally undesired, from sources of electromagnetic fields or to calibrate monopole

and dipole antennas used for field

strength measurements. An ideal site

consists of an obstruction- free plane

ground and the hemisphere above it - both infinite in extent. Ground con- stants may range from typical earth

values to values for good conductors.

Site attenuation measurements are used

to compare performance of real sites to some standard or reference site. Calculations presented here provide a reference for measurements to be made of a 30 m by 60 m wire mesh ground screen.

[(303) 497-3737]

Hill, D.A., and Koepke, G.H., An Array

of Dipoles for Plane Wave Synthesis,

to be published in the Proceedings of

the 1985 International Symposium on Antennas and Propagation, Kyoto, Japan,

August 20-25, 1985.

Phased arrays can be used to produce a nearly uniform plane wave in th^ near

field. This paper describes e s: array of dipoles which we have studied

theoretically and experimentally. : element excitations are determined I a near-field synthesis technique that

optimizes the field unifor. i’y t.’<: out the test volume.

[(303) 497-3472]
Page 22 CEEE Technical Progress Bulletin - June 85

Electromagnetic Interference , cont' d.

Kanda, M., and Nahman, N.S., Standards

for Measurement of Electromagnetic

Fields, to be published in the Proceedings of the IMTC/8 5 Instrumentation/Measurement Technology Conference,

Tampa, FL, March 21-22, 1985.

The standards developed at NBS for measurements of electromagnetic fields are

reviewed along with the industrial applications which engendered their development. Some attention is given to

future measurement requirements and the

NBS programs to meet them.

[(303) 497-5320]

Larsen, E.B., and Cruz, J.E., E and H

Fields in Transmission Limes and Coils

for Susceptibility Testing, Probe Calibration, and RF Exposure Chambers, to

be published in the Proceedings of the

IMTC/8 5 Ins trumentati on/ Measurement

Technology Conference, Tampa, FL, March

21-22, 1985.

This paper deals with the instrumentation and design equations for several

systems used to generate calculable

electric (E) and magnetic (H) fields for

electromagnetic compatibility (EMC)

testing. These "standard" electromagnetic (EM) fields with known magnitude

are used to: (a) test the susceptibility of electronic equipment to radiated

fields, (b) calibrate E and H field

probes for measuring and mapping fields,

and (c) expose biological specimens in a known EM environment. The design and

use of so-called transverse electromagnetic (TEM) cells terminated in their

characteristic impedance are not described here because these devices are discussed adequately elsewhere.

[ (303) 497-3540]

Ma, M.T., and Koepke, G.H., Measurements of Unintentional Emissions.

A new method for determining the radiation characteristics of leakage from

electronic equipment or other unintentional radiators for interference studies is presented. The theoretical background and specific measurement procedures for the method using a transverse

electromagnetic cell are outlined. The

theory and measurements have been verified by the results of a simulated theoretical example and an experiment using

a spherical dipole radiator. Mathematical analysis of the uncertainties in the

final, extracted results when the experimental data are degraded by the background noise and measurement imperfections is also available.

[(303) 497-3800]

Muth, L.A., A Theory of Mutual Impedances and Multiple Reflections in an N-Element Array Environment, to be

published as NBS Technical Note 1 078.

A general theoretical approach is formulated to describe the complex electromagnetic environment of an N-element

array. The theory reveals the elementto-element interactions and multiple

reflections within the array. From the

formulation, it is found that the interaction between an excited element and an open-circuited element can be viewed as the sum of terms describing all possible

signal paths within the array environment which start from the radiating

element and terminate on the element

under observation. Within all paths

except the most direct one, multiple

reflections between subgroups of elements take place. The resulting solution is highly structured and recursive

and is discussed in detail in the text.

Illustrative examples are provided to

facilitate understanding of these

ideas.

[(303) 497-3603]

Randa, J. , and Kanda, M., A FiniteElement Action Approach to the Characterization of Complex Electromagnetic

Environments, to be published in the

Proceedings of the 1985 International

Symposium on Antennas and EM Theory,

Beijing, China, August 25-27, 1985.

We outline an approach to the characterization of complicated electromagnetic
CEEE Technical Progress Bulletin - June 85 Page 23

Electromagnetic Interference , cont'd.

environments based on a finite-element

approximation to the action functional

of the electromagnetic field. A stationary point of the action is found by

a numerical search, subject to con- straints imposed by boundary conditions

and by measurements of the field at some number of points. The technique is

illustrated by a simple example.

[(303) 497-3150]

Randa, J. , and Kanda, M., Directional

Scanning of Complex Electromagnetic

Environments, to be published in the

Proceedings of the 1985 International

Symposium on Antennas and Propagation,

Kyoto, Japan, August 20-22, 1985.

As rf and microwave sources (both intentional and inadvertent) multiply, the

electromagnetic (EM) environment in

which electronic devices (and people)

must function becomes increasingly com- plicated, while at the same time its

characterization becomes more important.

In order to completely characterize an EM environment without knowledge of the

radiating sources, the sampling theorem

requires that systematic measurements of

the amplitude and phase of the field be

made throughout the volume at spacings

of no more than one-half wavelength (of

the highest frequency present) . This is

often impossible and seldom convenient.

There is a need for practical techniques

which would determine useful properties

of an EM environment from relatively few

measurements. One recent suggestion for

such a technique is to use directional

measurements at a single point in con- junction with a plane-wave expansion of

the field. This paper reports the formulation of the technique and the re- sults of a simulation using it.

[(303) 497-3150]

Randa, J. , and Kanda, M. , A Directional Scanning Technique for Characterization of Complex Electromagnetic Environments, to be published in the

Proceedings of the North American Radio

Science Meeting and International

IEEE/AP-S Symposium, Vancouver, B.C.,

June 17-21, 1985.

The problem of characterizing complicated electromagnetic environments without actually measuring the field(s)

throughout the entire volume of interest

is of great practical importance in the

areas of EMI/EMC electromagnetic hazard

assessment, etc. The question is how to

obtain useful information about the

volume of interest from a reasonably

small number of measurements.

A recent suggestion which appears to

hold considerable promise is to use a directional probe to measure at one point the field incident from different

directions and then to reconstruct or bound the field throughout the volume by

using these measurements in conjunction

with a plane-wave expansion of the

field. We have now completed the formulation and performed simulations for the

(vector) electric field, and we report

the results in this paper. Simulation

results are encouraging.

[(303) 497-3150]

Wilson, P.F., Adams, J.W., and Ma, M.T.,

Measurements of the Electromagnetic

Shielding Capability of Materials, to

be published in the forthcoming special

issue of the Proceedings of the IEEE on

Radio Measurement Methods and Standards

(invited paper) . Shielding effectiveness is usually mea- sured in terms of insertion loss, that

is, the reduction in the fields coupled

between a transmitter and receiver

achieved by introducing the shield material or case, etc. Although the insertion loss concept is simply stated,

problems arise when one attempts to

interpret specific insertion loss mea- surements. Insertion loss values obtained in practice depend not only

the shield material introduced ilso on antenna types used and their orientations, incident field distribution,

contact resistance. Variations in these

factors can yield almost any level t insertion loss for the same si sample. These concepts will b- di ;• •
Page 24 CEEE Technical Progress Bulletin - June 85

Electromagnetic Interference , cont'd.

briefly to emphasize both the difficulty

in making even relative insertion loss

comparisons and the importance of con- trolling and understanding the measurement configurations.

[Contact: Ma (303) 497-3800]

Wilson, P.F., and Ma, M.T. , Shielding

Effectiveness Measurements in a Dual

TEM Cell.

Small aperture theory is used to investigate the dual TEM cell. Analyzing

coupling through an empty versus loaded

aperture leads to a simple model of dual

TEM cell material shielding effectiveness measurements.

[ (303) 497-3842]

Recently Published

Juroshek, J.R., and Hoer, C.A., A

High-Power Automatic Metwork Analyzer

for Measuring the RF Power Absorbed by

Biological Samples in a TEM Cell,

IEEE Transactions on Microwave Theory

and Techniques, MTT-32, No. 8, pp. 818-

824 (August 1984).

A device for measuring the radiofrequency (RF) power absorbed by biological

samples while they are being irradiated

in a transverse electromagnetic (TEM)

cell is described. The report discusses

the design, calibration, and performance

of this automated measurement system.

The power absorption analyzer is based

on a six-port type of automatic network

analyzer, and operates at an incident

power to the TEM cell of 1 to 1 000 W,

over a frequency range of 100 to 1000

MHz. Experiments show that an absorbed

power of 0.02 to 0.05 percent of the

incident power can be measured. Measurements of the power absorbed by a 1

percent saline solution were made using

the power adsorption analyzer and by an independent calorimetric measurement.

The two measurement techniques show

excellent agreement.

[ (303) 497-5362]

Shafer, J.F., Field Strength Levels in

Vehicle Resulting From Communications

Transmitters, National Institute of

Justice Report No. 200-83 (June 1984).

This report provides the results of an exploratory study to measure the electric field strength levels inside an automobile from communications equipment

(transmitters and associated antennas)

typical of that likely to be operated in

and around the automobile as a law-enforcement vehicle. Field strengths were measured with a calibrated probe at 10

locations within the test vehicle, with

and without the driver's door open, and

with and without front-seat occupants,

at frequencies representing the frequency bands of 25 to 50, 150 to 174, 400 to

512, and 806 to 866 MHz. Levels of

output power are given for the data

presented. Field strength levels are also given for the situation when a metallic prisoner shield or a personal

transceiver is used in a vehicle, together with a mobile transceiver, in some cases. Also included are field

strength measurements of speed measuring

radar devices used in vehicles.

[Contact: Jesch, (303) 497-3496]

Wilson, P.F., Chang, D.C., and Ma, M.T.

,

Input Impedance of a Probe Antenna in a TIM Cell, IEEE Transactions of Electromagnetic Compatibility, EMC-26, No.

4, pp. 154-161 (November 1984).

The input impedance of a probe antenna

exciting a transverse electromagnetic

(TEM) cell is analyzed via a variational

formulation. The resulting impedance is

shown to consist of two distinct terms; an ordinary rectangular waveguide con- tribution and a gap perturbation. Numerically generated curves for both are given and suggest that a simple algebraic approximation for the input imped- ance should normally suffice. The re- sistive portion is found to be proportional to the square of the probe

length, while the reactive portion is

largely capacitive. These results

should enhance the use of probes in-
CEEE Technical Progress Bulletin - June 85 Page 25

Electromagnetic Interference / cont'd.

serted in TEM cells either to excite or to measure fields.

[(303) 497-3842]

Wilson, P.F., and Ma , M.T. , Small

Aperture Analysis of the Dual TEM Cell

and an Investigation of Test Object

Scattering in a Single TEM Cell, NBS

Technical Note 1 076 (October 1984).

Small aperture theory is used to investigate the dual TEM cell. Analyzing

coupling through an empty versus a loaded aperture leads to a model of dual

TEM cell shielding effectiveness mea- surements. Small obstacle scattering

yields results for both the field perturbation and the change in a cell's

transmission line characteristics due to

the presence of a test object in a TEM

cell. In each case, theoretical values

are compared to experimental data.

[ (303) 497-3842]

1985 CEEE CALENDAR

June 10-14 (Boulder, CO)

Antenna Parameter Measurement by NearField Techniques. This course is

designed for engineers and scientists

concerned with the accurate measurement

of microwave antenna parameters. Major

emphasis will be placed on the theory of

near-field antenna-antenna interactions;

application to near-field scanning on

planar, cylindrical, and spherical surfaces; and the computation of desired

antenna characteristics from near-field

data. Results comparing planar, cylindrical, and spherical methods will be

presented, and the limitations and advantages of each method discussed. In

addition, less detailed treatment will

be offered of the extrapolation method

for determining absolute gain and polarization. [Contact: Richard L. Lewis

(303) 497-5196]

July 15-18 (Boulder, CO)

National Conference of Standards

Laboratories 1985 Workshop and Symposium; Managing Measurements to Achieve

Quality. CEEE papers on waveform,

microwave, and noise metrology. [Contact NCSL Secretariat MCI 04, Room 5001

Radio Building, NBS, Boulder, CO 80303]

July 22-24 (Monterey, CA)

1985 IEEE 22nd Annual Conference on Nuclear and Space Radiation Effects.

This Conference will cover nuclear and

space radiation effects and electromagnetic pulse effects on electronic devices, materials, circuits, and systems,

as well as semiconductor processing

technology and techniques for producing

radiation- tolerant (hardened) integrated

circuits. Specific topic areas are likely to include: basic radiationeffects mechanisms for materials and

devices; radiation effects and spacecraft charging in satellites; radiation

transport, energy deposition, dosimetry,

and radiation facilities; methods of

design and manufacturing for radiationhardened electronic devices, integrated

circuits, and the effects of radiation

on these devices; electromagnetic pulse

phenomena, assessment of coupling, and

measurement technology; single-event

upset and latchup phenomena; hardness

assurance technology and testing techniques; radiation effects on the materials and electronics of nuclear reac- tors (power and space); and new developments and new technologies of interest

to the nuclear and space radiation effects community.

Ihe Conference is sponsored by the Radiation Effects Committee of the IFF

Nuclear and Plasma Sciences Society and

cosponsored by the Defense Nucle ir A

cy , Sandia National Laboratories, and

the Jet Propulsion Laboratory; the - eral Chairman for this Oonf>-r- n K. F. Gallcway, Chief of CEEB's Saai
Page 26 CEEE Technical Progress Bulletin - June 85

1 985 CEEE CALENDAR, cont'd.

ductor Devices and Circuits Division.

[Contact; Sandra B. Kelley (301) 921-

3541]

July 23-25 (Vail, CO)

Short Course on Optical Fiber

Measurements. [Contact;

Robert L. Gallawa (303) 497-3761]

August 6-8 (Boulder, CO)

NBS EMI Metrology Short Course. The

purpose of this course is to provide upto-date information on instrumental

methods for measuring electromagnetic

interference. Topics to be covered include: relevant NBS measurement services; open-site measurements as related

to FCC requirements; the use of TEM

cells, anechoic chambers, reverberating

chambers, and probes; measurements of

shielding effectiveness; and the electromagnetic environment, including con- ducted and outband EMI. Hands-on demonstration exercises in the NBS Boulder

laboratories are part of this course, as

is an FCC presentation on FCC practices

and measurements. [Contact: Kent

Zimmerman (303) 492-5151]

September 9-10 (Gaithersburg, MD

)

VLSI Packaging Workshop. The IEEE

Components, Hybrids, and Manufacturing

Technology Society and NBS are jointly

sponsoring this Fourth Annual Workshop.

Attendees are expected to be specialists

in the field and participate in discussions. Papers are planned in the following areas: VLSI package design,

package thermal design, VLSI package

interconnection options, package electrical issues, integrating package design, GaAs IC packaging, VLSI package

materials advancements, die-attach solutions for VLSI packages, and new failure

mechanisms in VLSI packaging. [Contact:

Sandra B. Kelley (301) 921-3541]

November 5-6 (Gaithersburg, MD

)

Workshop on Test Procedures for Precision Instrumentation and ATE Systems.

The purpose of this Workshop is to promote the exchange of information among

researchers, users, manufacturers, testing companies, and calibration laboratories on procedures for testing and verifying the performance of precision instrumentation and ATE systems. Sessions

are planned to cover first-article/acceptance testing, bid-sample testing,

writing specifications and procedures,

minimum-use specifications, test accuracy ratios, the cost of testing con- trasted with its benefits, case histories of specific testing programs, optimum calibration strategies, and recom- mended practices. [Contact: John R.

Sorrells (301 ) 921-2727]

December 5 (Gaithersburg, MD)

1 985 Power Semiconductor Devices Workshop. This Workshop is jointly sponsored by the IEEE Electron Devices Society and NBS and is held in conjunction

with the IEEE Electron Devices Meeting

in Washington, D.C., which it follows.

Topic areas include: packaging, power

integrated circuits, three-terminal

devices, and modeling. The format of

the Workshop calls for each topic area

to be addressed by working groups of 15

to 30. Reports from the working groups

will be developed and presented orally

to all attendees in a concluding session. [Contact: Sandra B. Kelley (301)

921-3541]

NEW STANDARD REFERENCE MATERIALS

The first practical superconducting

standard reference material (SRM) has

been released by the Electromagnetic

Technology Division to the NBS Office of

Standard Reference Materials for sale to

the public. The certified parameter of

SRM 1457, Superconducting Critical Current -- NbTi Wire, is critical current

at magnetic fields of 2,4,6, and 8 tesla

at a temperature of 4.2 K and an electric field criterion of 0.2 yV/cm.

Information is given to permit the user

to determine critical current for temperatures in the range 3.90 to 4.24 K
CEEE Technical Progress Bulletin - June 85 Page 27

NEW STANDARD REFERENCE MATERIAL, cont'd.

and electric field criteria from 0.05 to

0.2 yV/cm.

SRM 1457 consists of a 2.2-m length of a multif ilimentary , niobium- ti tan i urn , copper-stabilized wire, wound in a single layer on a spool having a core diameter of 8.7 cm. The wire is evaluated

for 34 parameters relating to current,

voltage, magnetic field, temperature,

strain, and physical specimen characteristics.

In conjunction with ASTM Standard Test

Metnod B7 14-82, D-C Critical Current of

Composite Superconductors, the new SRM

is intended to provide means for calibrating apparatus used to measure key

parameters of superconductor products

and thus should be useful to buyers and

sellers of superconductors, users of

superconducting equipment, and re- searchers in superconducting technology.

CEZE SPONSORS

National Bureau of Standards

Department of Defense

Defense Advanced Research Projects

Agency; Combined Army/Navy/Ai r Force

Calibration Coordination Group;

Defense Nuclear Agency

U.S. Air Force

Bolling AFB; Hanscom AFB; Newark Air

Force Station; Rome Air Development

Center; Space Division; WrightPatterson AFB; U.S. Army

Aberdeen Proving Ground; Aviation

Research and Development Command;

Fort Monmouth; Harry Diamond

Laboratories; Fort Be lvoir

U.S. Navy

Aviation Logistics Center (Patuxent

River); Naval Surface Weapons Center;

Naval Weapons Support Center (Crane);

Office of Naval Research

Department of Energy

Energy Systems Research; Fusion

Energy

Department of Justice

Law Enforcement Assistance

Administration

Charles Stark Draper Laboratory

Electric Power Research Institute

Electronic Industries Association

International Copper Research

Association

International Telecommunications

Satellite Organization

Sandia National Laboratories

University of California Los Alamos

Scientific Laboratory
NBS-114A (REV. 2 - 80 ) U.S. DEPT. OF COMM.

BIBLIOGRAPHIC DATA

1. PUBLICATION OR

REPORT NO.

2. Performing Organ. Report No. 3. Publication Date

SHEET (See instructions) NBSIR 85-3181 June 1985

4. TITLE AND SUBTITLE

Center for Electronics and Electrical Engineering Technical Progress Bulletin

Covering Center Programs, October - December 1984 with 1985 CEEE Events Calendar

5. AUTHOR(S)

E. Jane Walters, compiler

6. PERFORMING ORGANIZATION (If joint or other than NBS, see instructions) 7. Contract/Grant No. NATIONAL BUREAU OF STANDARDS

DEPARTMENT OF COMMERCE 8. Type of Report & Period Covered

WASHINGTON, D.C. 20234 October - December 1984

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street, City, State, ZIP)

U.S. Department of Commerce

National Bureau of Standards

National Engineering LaboratoryCenter for Electronics and Electrical Engineering

10. SUPPLEMENTARY NOTES

All technical information included in this document has been approved for

publication previously.

J Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bibliography or literature survey, mention it here)

This is the ninth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. This issue of the CEEE Technical Progress Bulletin covers

the fourth quarter of calendar year 1984. Abstracts are provided by technical area

for both published papers and papers approved by NBS for publication.

12. KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolons)

antennas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers; semiconductors; superconductors

13. AVAILABILITY 14. NO. OF

[^] Uni i mi ted

| | For Official Distribution, Do Not Release to NTIS

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CENTER FOR ELECTRONICS AND ELECTRICAL ENGINEERING

ELECTROSYSTEMS

DIVISION

1

' j— Applied Electrical

Measurements

‘—Elec Lronic

Inscruraenta t ion

and Metrology

EliXnTOlAGNETIC

FIELDS

DIVISION

r— Antenna Systems

Metrology — Fields

j Cnaracterization

Interference

Characterization

| .ajacrsoM&^ric

TECHNOLOGY

DIVISION

J— Microwave

j Metrology

!— Optical

j Electronic

| Metrology

Cryoelectronics

Metrology

Superconductors

and Magnetic

'Materials

SEMICONDUCTOR.

MATERIALS AND

PROCESSES

DIVISION — Silicon

Charac terization — Process Control

Measurements — Micranetrclogy — Corpound

f Semrcondiiotac — Processing Faciii;

SEMICONDUCTOR

DEVICES AND

CIRCUITS

DIVISION

I

i— Integrated

j Circuit Test

j Structures — Device and

Process

Modeling

i— Device

Metrology

KEY CONTACTS

Center Headquarters (720)

Elec trosystarts Division (722)

Electromagnetic Fields Division (723)

Electromagnetic Technology Division (724)

Sesdconductor Materials and Processes Division (725)

Semiconduc tor Devices and Circuits Division (726)

Director, Mr. Judscn C. French (301) 921-3357

.Deputy Director, Mr. Robert I. Scace (501) 921-3357

Chi.ef, Dr. Oskars Petersons (301) 921-2323

•Chief, Mr. Charles K.S. Miller (303) 497-3131

Chief, Dr. Robert A. Kamper (303 ) 497-3555

Acting Chief, Mr. Fraask F. Oettinger (301) 921-3736

Chief, Dr. Kenneth F. Calloway (301) 921-3541

INFORMATION

For additional information on the Center for Electronics arid Electrical Engineering , write or call:

Center for Electronics .and Electrical Engineering

National Bureau of Standards

Metrology Building, Room E-258

Grithersburg, Maryland 25399 Telephone (XI) 921-3357