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U.S. DEPARTMENT of commerce

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

Gaithersburg, Maryland 20899

Covering Center Programs, October - December 1983

with 1984 CEEE Events Calendar

April 1984

GC I S. DEPARTMENT OF COMMERCE

1 JO IATIONAL BUREAU OF STANDARDS

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INTRODUCTION TO APRIL 1984 (3) ISSUE OF THE CEEE TECHNICAL PROGRESS BULLETIN

This is the fifth issue of a quarterly abstract journal covering the work of the

National Bureau of Standards Center for Electronics and Electrical Engineering. This

issue of the CEEE Technical Progress Bulletin covers the fourth quarter of calendar

year 1983.

ORGANIZATION : Abstracts and citations are arranged by technical topic as identified

in the table of contents and alphabetically by first author under each subheading

within each topic. Each abstract ends with a telephone number of the individual to

contact for more information on the topic; unless otherwise noted, this individual is

the first author. Each citation ends with identification of the issue of the

Technical Progress Bulletin in which the associated abstract appeared. This issue

al so includes a calendar of Center conferences and workshops for the remainder of

calendar year 1984, an announcement of newly released standard reference materials,

and a list of sponsors of the work. SPECIAL NOTE : Because the four issues covering

calendar year 1983 are later than intended, the contents of these issues will differ

from the original plan of providing abstracts for all papers released by NBS in a quarter as follows: Each issue will contain (1) abstracts of papers released for

publication by NBS for the appropriate quarter and not subsequently published until

calendar year 1984, (2) abstracts of papers released and published during the

quarter, and (3) citations for papers published during the quarter, but for which

abstracts have appeared in an earlier issue of the Technical Progress Bulletin . Items in category (1) appear under the subheading "Released for Publication"; items

in categories (2) and (3) appear under the subheading "Recently Published".

Center for Electronics and Electrical Engineering : Center programs provide national

reference standards , measurement methods , supporting theory and data, and

traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U. S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor

Technology Program, carried out by the Semiconductor Materials and Processes and

Semiconductor Devices and Circuits Divisions in Gaithersburg, MD, and the Signals and

Systems Metrology Program, carried out by the Electrosystems Division in Gaithersburg

and the Electromagnetic Fields and Electromagnetic Technology Divisions in Boulder,

CO. Key contacts in the Center are given on the back cover; readers are encouraged

to contact any of these individuals for further information.

Previous special issues : Two special issues of the Technical Progress Bulletin have

been published with abstracts for the Signals and Systems Program only, NBSIR 83-

2719-1, covering October 1981 through March 1982 and NBSIR 83-2719-2, covering April

1982 through September 1982. NBSIR 82-2636, a special issue of the Semiconductor

Technology Program Pr ogress Briefs published in January 1983, listed abstracts of

publications from tTiat Program for Federal fiscal year 1982 (October 1981 through

September 1982, fifty-third through fifty-seventh quarters of the Program). The new CEEE Technical Progress Bulletin replaces the Progress Briefs series [single copies

of 82-2636 are available from the Center, see back cover for address].

Center sponsors : The Center Programs are sponsored by the National Bureau of

Standards and a number of other organizations, in both the Federal and private

sectors; these are identified on page 18.
CEEE Technical Progress Bulletin - April 84 (3)

NATIONAL EUEEAU

OF STANDARDS

LI?-F.AET

£>c

I 00

la SO Page 1

TABLE OF CONTENTS C\ %UI NTRODUCTI ON inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM

Si 1 icon Materials

Gallium Arsenide Materials 2 Analysis Techniques 3

Insulators and Interfaces 3

Dimensional Metrology 3

Integrated Circuit Test Structures 4

Process & Device Modeling 6

Radiation Effects 8

Power Devices 9

Packaging 9

Other Semiconductor Metrology 10

SIGNALS AND SYSTEMS METROLOGY PROGRAM

FAST SIGNAL ACQUISITION, PROCESSING, A TRANSMISSION 11

Waveform Metrology 11

Cryoelectronic Metrology 11

Antenna Metrology 12

Noise Metrology 13

Optical Fiber Metrology 13

Other Fast Signal Topics 14

ELECTRICAL SYSTEMS 14

Power Systems Metrology 14

Pulse Power Metrology 15

ELECTROMAGNETIC INTERFERENCE 15

CEEE CALENDAR 15

NEW STANDARD REFERENCE MATERIALS 17

SPONSOR LIST 18

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back covpt
Page 2 CEEE Technical Progress Bulletin - April 84 (3)

SEMICONDUCTOR TECHNOLOGY PROGRAM

Silicon Materials

Released for Publication

Forman, R.A., Bell, M.I., Mayo, S., and

Kahn, A.H., The Effect of Spatial

Averaging on the Compositional Analysis

of Crystals by Absorption Spectroscopy, submitted to J. Applied

Physics.

Calculations of optical absorption based

on a model of a single crystal containing periodic compositional variations

are presented. These variations can contribute a significant source of

systematic error in the analysis of

composition by optical or surface techniques. The model is most appropriate

for melt-grown crystals and in particular for striated semiconductor crystals.

The results are discussed in the context

of optical absorption studies of

impurities in typical semiconductor

silicon crystals and it is shown that

significant measurement errors may

occur.

[(301) 921-36251

Recently Published

Forman, R.A., Bell, M.I., Baghdadi, A.,

and Mayo, S., The Effects of Striations on the Compositional Analysis of

Silicon Crystals, Defects in Silicon,

Proc. 83-9, pp. 303-312, W. M. Bui 1 i

s

and L. C. Kimerling, Eds., Electrochemical Society, Pennington, NJ

(1983) [paper presented at Society

conference, San Francisco, CA,

May 8-13, 1983; summary published in

Extended Abstracts of the Electrochemical Society, 83-1, pp. 463-464

(1983); abstract appeared on page 2 of

July 1983 TPB ( NBSIR 83-2719-3)].

Larrabee, R.D. and Lowney, J.R.,

Measurement Techniques for HighResistivity Detector-Grade Silicon:

Progress Report, July 1, 1982 to June

30, 1983, NBSIR 83-2792 (December

1983) .

Techniques for nondestructively

characterizing the resistivity and

excess-carrier recombination lifetime in

ingots of high-resistivity, longlifetime detector-grade silicon are being evaluated. In particular, three

interrelated techniques for

nondestructively: 1) measuring an average resistivity, 2) profiling the

low-level excess-carrier lifetime, and

3) profiling the resistivity of

cylindrical ingot specimens are proposed

and are in the process of being

evaluated. All three techniques treat

the ingot under test as a large van der

Pauw specimen and require removable

silver-paste contacts or pressed-on

capacitive contacts. The profiling

measurements utilize a highly

penetrating 1.15-pm He-Ne laser beam as an optical probe. The conceptual and

theoretical background for these

measurements and the results of

feasibility experiments obtained to date

are presented. These results show the

expected behavior and produce reasonable

results, but additional work is required

to complete the feasibility experiments

and to confirm the results on a few

specimens by some independent

technique.

[(301) 921-3786]

Phillips, W.E., Thurber, W.R., and

Lowney, J.R., Improved Analysis

Procedures for Deep-Level Measurements

by Transient Capacitance, Defects in

Silicon, Proc. 83-9, pp. 485-490, W. M.

Bui 1 i s and L. C. Kimerling, Eds.,

Electrochemical Society, Pennington,

NJ (1983) [paper presented at Society

conference, San Francisco, CA,

May 8-13, 1983; summary published in

Extended Abstracts of the Electrochemical Society, 83-1, pp. 467-468

(1983); abstract appeared on page 2 of

July 1983 TPB (NBSIR 83-2719-3)].

Gallium Arsenide Materials

Released for Publication

Pande, K.P. and Seabaugh, A.C., Low
CEEE Technical Progress Bulletin - April 84 (3) Page 3

Gallium Arsenide Materials , cont'd.

Temperature Plasma-Enhanced Epitaxy of

GaAs, submitted to J. Electrochemical

Society.

Metal line stru ctures w-jth intentional

defects in the passivation, to simulate

cracks or voids, were used in electromigration studies. Results show that

the stress gradients caused by these

defects are not as important as the

restraining action of the passivation in

affecting a metallization's susceptibility to electromigration failure.

Also, the observed effects of restorative forces acting on the metallization

suggests that continuous monitoring for

open-circuit failure may be necessary to

obtain an accurate measure of the meantime-to-fai lure.

[Contact: Seabaugh, (301) 921-3625]

Analysis Techniques

Recently Published

Baghdadi, A., Multiple Reflection

Corrections In Fourier Transform

Spectroscopy, Defects in Silicon,

Proc. 83-9, pp. 293-302, W.M. Bui 1 i

s

and L.C . Kimerling, Eds., Electrochemical Society, Pennington, NJ

(1983) [paper presented at Society

conference, San Francisco, CA,

May 8-13, 1983; summary published in

Extended Abstracts of the Electrochemical Society, 83-1, pp. 460-461

(1983) under title Multiple

Reflection Corrections In Fourier

Transform Spectroscopy of Back Surface

Damaged Wafers; abstract appeared on page 2 of July 1983 TPB ( NBSIR

83-2719-3)].

Insulators and Interfaces

Recently Published

Chandler-Horowitz, D. and Candela, G.A.,

On the Accuracy of El 1 Ipsometrlc

Thickness Determinations for Very Thin

Films, J. de Physique 44, pp. CIO-23

(December 1983).

The uncertainty in the el 1 ipsometric

determination of the thickness of a film

on a substrate can be found

quantitatively. We have used the

solution of the differentials of film

thickness and refractive index. Results

of calculations for the ai r-Si 02-Si

system are presented. This theory has

been used to calculate the uncertainty

in the value of the thickness as a function of wavelength. We have also

calculated this uncertainty for known

uncertainty in the film's refractive

index. We show which uncertainties

contribute the most to the overall

accuracy of a thickness measurement.

[(301) 921-3561]

Dimensional Metrology

Released for Publication

Nyyssonen, D., National Bureau of

Standards, A Review of NBS's Activities

In the Area of Llnewldth Measurement,

to be published in Conference Summary,

Future Trends in Optical Technologies

in the Semiconductor Industry, May 23,

1983, Scientific Apparatus Manufacturers Association, Sunnyvale, CA.

Describes current NBS activities in

linewidth measurement, including

research, calibration of standard

reference materials (SRMs), development

of calibration procedures and test

methods, and technology transfer. The

current status of photomask linewidth

SRMs is discussed (anti-reflective

"gold" chromium SRMs 474 and 475, bright

chromium SRM 476, and the 3X reticle SRM

1830). Wafer linewidth measurements are divided into two categories, thin layers

(less than approximately 200 nm) and

thick layers. The design of the

linewidth standard for thin layers Is described. Research problems remaining

for thick layers are described along

with current NBS waveguide modeling.

Instrumentation used for both photomask

and wafer calibrations is also

described. NBS plans for development of

SEM/e-beam instrumentation and SRMs are also included. [(301) 921-3786]
Page 4 CEEE Technical Progress Bulletin - April 84 (3)

Integrated Circuit Test Structures

Released for Publication

Suehle, J.S., Linholm, L.W., and

Kafadar, K. , Minimum Test Chip Sample

Size Selection for Characterizing

Process Parameters, to be published

in Joint Special Issue of IEEE Trans.

Electron Devices and IEEE J. Solid

State Circuits.

A method for determining a test chip

sample size to estimate effectively the

electrical parameter distributions on an integrated circuit wafer is presented.

This method gives relations among sample

size and the figure of merit for four

statistical techniques (trimmed mean,

biweighted mean, median, and arithmetic

mean) by which estimates are calculated.

To demonstrate the use of this method,

it has been applied to the evaluation of

a CMOS fabrication process.

Measurements on wafers completely

patterned with identical test chips were used to determine actual parameter

distributions for an entire wafer (true

parameter values). Estimates of true

parameters were determined using a site

selection plan which is representative

of sampling plans employed in industry.

The above four statistical techniques

were used to compute estimates for

electrical parameters and their

respective figures of merit. These

estimates were compared with the true

parameter values determined from testing

all test chips on the wafer. When this

method is used in conjunction with the

cost criteria for test chip sample size,

it enables judgments to be made on the

effectiveness of sampling strategies for

various processes and process

technologies. The results reported in

this paper for CMOS processes are

interpreted for the case when no sample

size cost criteria are given.

[(301) 921-3621]

Recently Published

Mattis, R.L. and Zucker, R., Release

Notes for STAT2 Version 1.31: An

Addendum to NBS Special hjl/hiuiton

400-75 , NBS I R 83-2779 (November

1983).

This document describes the changes

which have been made in the STAT2

computer program. The new version

contains several new features which

provide a more powerful data base

capability, improved displays,- and

greater compatibility with the automatic

tester. In going from the original

version 1.01 to version 1.31, the DATA

array has been redefined and new REA

command formats have been added to be

compatible with new data acquisition

equipment. A new circular shaded map

has been added which gives a more

realistic representat i on of data

variation over a wafer surface. New map

and histogram scaling options allow

greater flexibility in specifying the

scale of data displays. A new format

for two data base commands allows

greater flexibility in selectively

listing and correlating data base

entries. The capability has been added

for disabling warning messages to reduce

unwanted printout, and for creating macro command files within a STAT2 run. Finally, a new method of specifying the

directory containing the Help files

makes STAT2 easier to install.

Following the description of the changes

is an annotated listing of new error messages.

[(301) 921-3621]

Mazer, J.A., Linholm, L.W., Pramanik,

D., Tsai, S., and Saxena, A.N.,

Comparison of Aluminum-Silicon Contact

Resistance Values Obtained by Contact

Chain and Kelvin Measurement

Structures, Extended Abstracts of the

Electrochemical Society, 83-2, pp.

453-454 (Abstract 292) [paper given at

Society conference, Washington, DC,

October 9-14, 1983].

The characterization of

metal /semi conductor ohmic-contact

resistance by means of a two-terminal

contact chain is limited to a non- Kelvin determination of front contact
CEEE Technical Progress Bulletin - April 84 (3) Page 5

Integrated Circuit Test Struct ., cont'd.

resistance. The use of a microelectronic test structure and

electrical measurement method for the

Kelvin determination of front contact

resistance determined by this method and

by the contact chain method demonstrates

inherent inaccuracies associated with

the contact chain method.

[(301) 921-3621]

Proctor, S.J., Linholm, L.W., and Mazer,

J.A., Direct Measurements of

Interfacial Contact Resistance, End

Contact Resistance, and Interfacial

Contact Layer Uniformity, IEEE Trans.

Electron Devices, ED-30, pp. 1535-1542

(November 1983) [related paper A

Microelectronic Test Structure for

Interfacial Contact Resistance

Measurement, presented by Linholm to

the Flate-Plate Solar Array Project

Photovoltaic Metallization Systems

Research Forum, Calloway Gardens, GA,

March 16-18, 1983].

A four-termi nal microelectronic test

structure and test method are described

for electrically determining the degree

of uniformity of the interfacial layer

in metal -semi conductor contacts and for

directly measuring the interfacial con- tact resistance. A two-dimensional

resistor network model is used to obtain

the relationship between the specific

contact resistance and the measured

interfacial contact resistance for con- tacts with a uniform interfacial layer.

A new six-terminal test structure is

used for the direct measurement of end

contact resistance and the subsequent

determination of front contact resistance. A methodology is described for

reducing the effects of both contactwindow mask misalignment and parasitic

resistance associated with these mea- surements. Measurement results are given for 98.5% Al/1.5% Si and 100% A1 contacts on n-type silicon.

[Contact: Linholm, (301) 921-3541]

Russell, T.J., Wilson, C.L., and Gaitan,

M., Determination of the Spatial

Variation of Interface Trapped Charge

Using Short-Channel MOSFETs, IEEE

Trans. Electron Devices, ED-30, pp.

1662-1671 (December 1983).

The charge-pumping measurement method

for determining interface trapped charge

(ITC) density was used to find the spatial distribution of ITC across a wafer

using MOSFETs with different channel

lengths. A charge pumping current is

produced by repetitively pulsing the

MOSFETs between accumulation and inversion. This current is proportional to

the ITC density. Only the MOSFET gate

length and width and the pulse frequency

are required to calculate ITC density

from charge pumping current. Twodimensional simulation of the measurement is used to show that, for sufficient applied pulse height voltage, the

correct area is obtained from the polysilicon physical gate length and width.

This measurement is strongly dependent

on variations in the polysilicon gate

area. If the spatial variation of the

physical gate length on the wafer is

neglected, an incorrect interpretation

of the spatial variation of ITC will

result. In this experiment the gate

lengths were assumed to be constant

across the wafer and a systematic spatial variation in ITC with a range of

2. 8-5.0 x lO 10 cm- 2 was observed. After

measuring the physical gate length for

each device on the wafer and making a length correction to the area, there was

no systematic variation in ITC and its

range was 5. 4-7.0 x io 10 cm- 2

. Length

corrections were also made for the other

two transistors at each location on the

wafer and the ITC densities exhibited

distinct ITC populations. The mean ITC

density for each transistor was separated from the other populations by at

least 2 standard deviations. Detection

of this type of variation in ITC using

capacitors is not possible since there

is no known relation between ITC measured by M0S capacitors and ITC measured

with MOSFETs.

[(301) 921-3621]

Yen, D. , Linholm, L.W., Glendinning, W.,
Page 6 CEEE Technical Progress Bulletin - April 84 (3)

Integrated Circuit Test Struct ., cont'd.

Bass, J.F., and Cheville, D.E.,

An Electrical Measurement Technique for

Estimating Proximity Effects in

Electron-Beam Lithography, Extended

Abstracts of the Electrochemical

Society, 83 -2, pp, 333-334 (Abstract

212) [paper given at Society

conference, Washington, DC,

October 9-14, 1983].

An electrical test structure and test

method is described for estimating the

magnitude of proximity effects in

electron-beam lithography. The test

structure consists of van der Pauw cross resistor for measuring sheet resistance,

a bridge resistor for measuring

electrical linewidth, and a second

bridge resistor simulating a close linespace environment for measuring

electrical linewidth where proximity

exposure effects from nearby patterns

may be encountered. These test

structures were delineated in a metal

layer on a silicon wafer using electron

beam exposure and wet chemical etching.

Electrical measurements are compared to

optical measurements. This technique

provides an alternative to optical

measurements for determining effective

linewidth in a dense circuit environment

and can be used to estimate parameters

for the double Gaussian model used in

proximity correction algorithms.

[(301) 921-3621]

Process and Device Modeling

Released for Publication

Albers, J., Semiconductor Measurement

Technology: TXYZ: A Program for

Semiconductor IC Thermal Analysis, to

be published as an NBS Technical Note.

A computer program, TXYZ, for the

thermal analysis of semiconductor

integrated circuits is presented and its

applications are discussed. The program

makes use of the closed form, analytic

solution of the steady-state heat flow

problem for a rectangular three-layer

structure with multiple heat sources on the top layer. The temperature may be

obtained for any point or set of points

in the structure and is useful in the

determination of the steady-state

thermal response of IC chips and

packages.

[(301) 921-3621]

Bennett, H.S. and Wilson, C.L.,

Analysis of the Statistical Comparisons

of Data on Band-gap Narrowing in

Heavily Doped Silicon: Electrical and

Optical Measurements, to be published

in J. Applied Physics.

A system of subroutines for iteratively

reweighted least squares (IRLS) computations has been applied to the published

measured and theoretical data on band-gap narrowing in heavily doped

silicon. The data include electrical

and optical measurements at room

temperature, photoluminescence and

optical measurements for temperatures

below 35 K, and theoretical calculations

at 300 K and 0 K. This procedure, IRLS,

allows an unambiguous comparison of the

various experimental and theoretical

data in band-gap narrowing to be made.

The results are 1) that the optical

absorption data and theory are consistent at both 300 K and at temperatures

below 35 K; 2) that the electrical and

optical measurements are not consistent;

and 3) that when compared with the low

temperature optical absorption data, the

photoluminescence data have low

statistical significance.

[(301) 921-3541]

Recently Published

Albers, J., The Relation Between the

Correction Factor and the Local Slope

in Spreading Resistance, J. Electrochemical Society 130, pp. 2076-2080

(October 1983) [paper presented at

Society conference, Washington, DC,

October 9-14, 1983; summary published

in Extended Abstracts of the Electrochemical Society, 83-2, pp. 514-515

(Abstract 323) (1983) under title

Investigation of the Relation Between
CEEE Technical Progress Bulletin - April 84 (3) Page 7

Process & Device Modeling , cont'd.

the Correction Factor and the Local

Slope in Spreading Resistance].

Dickey has proposed a technique, known

as the local-slope method, for the

calculation of the correction factor

which is used to obtain resistivity

profiles from spreading resistance data.

The technique is founded upon two

asymptotic models for the conduction

process involved in the spreading

resistance measurement for the cases of

1) a conducting layer over an insulating

substrate, and 2) a high resistivity

layer over a low resistivity, i.e., a conducting substrate. The results of

these two extreme cases are bridged by means of an assumed functional relation

between the correction factor and the

local slope of the spreading resistance

data. The two asymptotic models as well as the assumed functional relation

between the correction factor and the

local slope are examined. It is shown

that the asymptotic models adequately

describe the behavior of the correction

factor for a thin uniform layer over insulating or conducting boundaries. In addition, the assumed single-valued

behavior between the correction factor

and the local slope which is assumed by

the local-slope method is shown not to

be an adequate representation of the

multiple-valued relation between these

two quantities found from multilayer

data. For the cases considered, this

distinction leads to an error in the

resistivities interpreted by the localslope method by as much as 60 percent.

Nonetheless, the local-slope results

qualitatively follow the multilayer

results thus making the technique a usable one for the calculation of

approximate correction factors. A

comparison of the two correction factor

vs. local-slope relations provides a basis for the behavior of the

interpreted resistivities when they are compared with the input resistivities.

[(301) 921-3621]

and Wilson,

C.L., Verification of Models for

Fabrication of Arsenic Source-Drains in

VLSI MOSFETs , IEEE Trans. Electron

Devices, ED-30, pp. 1453-1462 (November

1983)

.

The understanding of the effects of both

low- and high-temperature anneals of

arsenic implanted into silicon is

critical in the calculation of p-n

junction profiles of sources and drains

in short channel MOSFETs. The work

reported here uses a self-consistent

sample matrix of arsenic implanted into

silicon over a wide range of fluences

and annealed in both the low- and hightemperature regimes. This matrix of

samples was measured by means of

Rutherford back scattering (RBS),

spreading resistance (Rsp), and

secondary ion mass spectrometry (SIMS).

The measurement techniques are compared

with each other, with the predictions of

ion implantation models, and with the

anneal ing./di ffusion models. Comparison

of the RBS data from more than one experiment indicates that high quality

quantitative analysis requires more

complex calibration data for the

detector than is usually available. The

Rsp data obtained on the low-temperature

annealed samples did not yield

reasonable arsenic profiles, both with

respect to the peak location and profile

shape. The measurement technique which

was most consistent with theoretical

models and most reproducible from one experimenter to another is the SIMS

technique. The SIMS data showed the

best agreement with the TRIM Monte Carlo

calculation of Haggmark and Biersack as well as the calculation of Winterbon

when the low temperature data was used.

In addition, calculation of the annealed

profiles were found to be in agreement

with the SIMS data, at temperatures

greater than 900°C, when the form used

by Fair was employed. A large

adjustment in the parameters of the

charge vacancy reaction is necessary; a much smaller adjustment is required in

the parameters of the extrinsic

diffusion reaction. The accuracy

Albers, J., Roitman, P., obtained here is typical of much
Page 8 CEEE Technical Progress Bulletin - April 84 (3)

Process & Device Modeling , cont'd.

available data but may not be sufficient

to characterize submicron structures.

[(301) 921-3621]

Bennett, H.S., Hole and Electron

Mobilities in Heavily Doped Silicon:

Comparison of Theory and Experiment,

Solid-State Electronics, 26, pp. 1157-

1166 (1983) [related paper presented at

Electrochemical Society conference,

Washington, DC, October 9-14, 1983;

summary published in Extended Abstracts

of the Electrochemical Society, 83-2,

pp. 542-543 under title Inequality of

Hole Mobilities in Heavily Doped N-Type

and P-Type Silicon].

Most device models for npn or pnp transistors assume that hole (electron)

mobilities in n-type and p-type silicon

are equal. Partial-wave phase shift

calculations for the contributions of

carrier-dopant ion scattering to the

carrier mobilities lead to unequal minority hole (electron) and majority hole

(electron) mobilities at the same doping

density. These calculations are valid over the doping range of 2 x 10 19 to 8 * 10 19 cm- 3 in n-type and p-type silicon

and contain fhe assumptions that the

holes and electrons move in isotropic,

parabolic energy bands and are scattered

by the screened Coulomb potentials of

the dopant ions. When the effects of

carrier-acoustic phonon and carriercarrier scatterings are included, these

calculations agree to within the spread

of experimental values for the majority

mobilities reported in the literature.

This agreement is a substantial

improvement by factors of 2 to 4 over the results of earlier theories such as first order Born and nondegenerate

theories. The results of this work,

particularly the inequality of minority

and majority carrier mobilities, have

implications for the modeling of both

bipolar and field effect transistors.

[(301) 921-3541]

Blue, J.L. and Wilson, C.L., TwoDimensional Analysis of Semiconductor

Devices Using General-Purpose

Interactive PDE Software, IEEE Trans.

Electron Devices, ED- 30, pp. 1056-1070

(October 1983) and SIAM J. Scientific

Computing, 4, pp. 462-484 (October

1983).

Analyzing currents and fields in VLSI

devices requires solving three coupled

nonlinear elliptic partial differential

equations in two dimensions.

Historically, these equations have been

solved using a special-purpose program

and batch runs on a large, fast

computer. We use a general-purpose

program and interactive runs on a large

minicomputer. We discuss the physical

formulation of the semiconductor

equations and give three example

solutions: a short-channel M0SFET near punchthrough, a DM0S power transistor in

the ON state, and a beveled £-n

junction. These examples demonstrate

that solutions to a very general class

of semiconductor-device problems can be

obtained using these methods.

[Contact: Wilson, (301) 921-3541]

Radiation Effects

Recently Published

Blackburn, D.L., Benedetto, J.M., and

Galloway, K.F., The Effect of

Ionizing Radiation on the Breakdown

Voltage of Power MOSFETs, IEEE Trans.

Nuclear Science, NS-30, pp. 4116-4121

(December 1983).

It is shown that the drain-source

breakdown voltage of power MOSFETs is a strong function of the total dose of

ionizing radiation to which the device

has been exposed. For the ji-channel

MOSFETs studied, the breakdown voltage

after exposure is reduced from the

unirradiated value. The cause for the

effect is postulated to be the trapping

of radiation generated charge in the

field oxide and the generation of traps

at the field oxide-silicon interface.

The devices studied varied in breakdown

voltage between 60 to 500 V and used

field plates and/or field rings to
CEEE Technical Progress Bulletin - April 84 (3) Page 9

Radiation Effects , cont'd.

terminate the high voltage junction.

The magnitude of the drain-source

voltage applied to the device during

irradiation is shown to have a strong

influence on the total shift in

breakdown voltage after the irradiation.

It is also found that the method of

junction termination has some influence

on the total shift. These influences

occur because the electric field in the

oxide during irradiation depends both

upon the applied drain-source voltage

and the method of junction termination.

Implications of these findings on device

applications are briefly discussed.

[(301) 921-3541]

Lantz, M.D. and Galloway, K.F., Total

Dose Effects on Circuit Speed

Measurements, IEEE Trans. Nuclear

Science, NS-30, pp. 4264-4269 (December

1983).

Measurements of propagation delay as a function of total ionizing dose were made using ri ng-osci 1 lators, inverter

chains, and NAND chains fabricated on the same CMOS test chip. The data

illustrate the impact of the bias

conditions of the MOS transistors during

irradiation on the propagation delay

time of the circuits. The data show no difference in propagation delay time for

the three circuit types if comparable

bias conditions are maintained during

radiation exposure. The threshold

voltage shift of the jn-channel

transistor in the "ON" state appears to

be the dominant factor controlling the

decrease in propagation delay as the

total dose increased. The ultimate

failure of the test circuits is due to

the shift of the ji-channel transistors

to a negative threshold voltage.

[Contact: Galloway, (301) 921-3541]

Power Devices

Recently Published

Chen, D.Y., Lee, F.C., Blackburn, D.L.,

and Berning, D.W., Reverse-Bias

Second Breakdown of High-Power

Darlington Transistors, IEEE Trans.

Aerospace and Electronic Systems, AES19, No. 6, pp. 840-847 (November 1983)

[abstract appeared on page 5 of April

1984 TPB ( NBSIR 84-2857-2)].

Packaging

Released for Publication

Oettinger, F.F., Thermal Evaluation of

VLSI Packages Using Test Chips — A

Critical Review, Solid State Technology, 27, No. 2, pp. 169-179 (February

1984).

The design, analysis, and utilization of

test chips for the thermal evaluation of

VLSI packages are discussed. The factors that determine the thermal performance of microelectronic devices are the

circuit type, the fabrication technology, the die size, the die attachment

method, the package and heat dissi pater

design, and the ambient environment.

Thermal test chips are extensively used

in characterizing new package designs

for VLSI chips in the 1- to 10-W range.

The information discussed should allow

the engineer to rationally choose a particular test chip design and to un- derstand the implications of measurements to thermally characterize a particular chip-package system.

Recently Published

Harman, G.G., The Microelectronic

Bail-Bond Shear Test - A Critical

Review and Comprehensive Guide to Its

Use, International J. Hybrid Microelectronics, 6, pp. 127-141 (October

1983) [also to appear in Solid State

Technology].

The microelectronic bail-bond shear test was first developed in 1967. Since

then, it has been used to study the

effects of contamination on bondability,

to characterize the reliability of goldaluminum i ntermetal 1 ic formation, to

control bonding machine parameters for

device production, and to troubleshoot
Page 10 CEEE Technical Progress Bulletin - April 84 (3)

Packagi ng , cont'd.

such production problems as poor

metallization adherence and

contamination. This paper critically

reviews all of these uses and identifies

ways that the shear test can be implemented to improve bond yield and assure

long term bond reliability. A manual

shear probe is described that can be

quickly made from the blade of a jeweler's screwdriver. This probe was instrumented with a strain gage and the

shear test results compared within 10%

of those obtained from a machine. The

paper also presents data obtained from

shearing both aluminum-ball and -wedge

bonds and determines how the shear

testing machine requirements for these

differ from those required to test gold

ball bonds.

The shear strengths of both annealed

gold and aluminum were measured and

compiled in a plot of shear force versus diameter of the bonded area in order to

determine the maximum force obtainable

when shearing both gold and aluminum

bonds having differing ball size.

Interferences that may produce erroneous

shear test results, such as friction

rewelding of gold balls on gold

metallization, are described along with

ways of avoiding such problems.

Finally, the implications of pending

ASTM and military standards on the widespread use of the shear test is

discussed. This paper is intended to

present all information necessary to

both understand and implement the shear

test for research purposes or for

production control.

[(301) 921-36211

Other Semiconductor Metrology

Released for Publication

Forman, R.A. and Kratz, H.D., A Simple

Vacuum Pump Exhaust Filter,

submitted to Review of Scientific

Instruments.

A simple high-throughput, exhaust filter

for oil-filled mechanical vacuum pumps

is described. The design allows easy

connection to external systems. Inexpensive filter elements, available

anywhere, are a further feature of the

system.

[(301) 921-3625]

Galloway, K.F., Measurements for VLSI

Models, to be published in Proc.

Second International Workshop on Physics of Semiconductor Devices,

Delhi, India, December 5-10, 1983.

The complexity of VLSI makes an experimental approach to design and fabrication unrealistic. Accurate, computerbased models for simulating processes,

devices, and circuits are required to

competitively develop VLSI technologies.

The effectiveness of these models is

often limited by the accuracy of the

physical parameters used as input for

the simulations. This paper summarizes

results from two recent projects on measurement technology for obtaining

parameters for VLSI models to illustrate

the research in this area at the

National Bureau of Standards.

[(301) 921-3541]

Hinkley, J.A., Absorption of Polystyrene on Thermally Oxidized Silicon,

submitted to Polymer Preprints.

Ellipsometry was used to observe the

adsorption, from 6 solvents, of polystyrene on thermally oxidized silicon.

Since no adsorption was seen with a polar solvent, it is concluded that

specific acid-base interactions are decisive in adsorption. At high surface

coverages, the present results agree

with those on various metal surfaces,

and the root-mean-square extension of

polymer coils from the surface is almost

twice the radius of gyration of a chain

in solution.

[Contact: D.B. Novotny, (301) 921-3625]

Recently Published

Hinkley, J.A., A Blister Test for

Adhesion of Polymer Films to SIO2,
CEEE Technical Progress Bulletin - April 84 (3) Page 11

Other Semiconductor Metrology , cont'd.

Adhesion, 16, pp. 115-126 (December

1983).

Films of polystyrene or polymethyl

methacrylate were cast on oxidized

silicon substrates, then detached by the

application of gas or water pressure

from the back side of the film through a hole in the substrate. Critical detachment pressures showed good repeatability

and could be used to calculate the work

of adhesion. For polystyrene on a hydrophilic silica in the presence of

water, the apparent work of adhesion is

78 mj/m2

. Other polymer/substrate com- binations gave meaningful variations in

detachment pressure.

[Contact: D.B. Novotny, (301) 921-3625]

FAST SIGNAL ACQUISITION, PROCESSING,

AND TRANSMISSION

Waveform Metrology

Recently Published

Andrews, J.R., Bell, B.A., and

Baldwin, E.E., Reference Flat Pulse

Generator, NBS Technical Note 1067

(October 1983).

A reference step-like pulse generator is

described which has been developed at

NBS. This generator can be used for

accurately characterizing the step

response of various kinds of transient

recording equipment (oscilloscopes,

waveform recorders, transient digitizers, etc). Basic design principles

are given as well as complete circuit

diagrams and descriptions. An analysis

of the output stage of the generator is

presented together with the circuit

models for developing a time-domain

computer simulation program using

extended-SCEPTRE. Preliminary specifications indicate that the NBS Reference

Flat Pulse Generator provides a negative-going reference transition

duration (90 to 10 percent) of 600 ps.

±20 percent with baseline perturbations

of less than ±2 percent for less

than 5 ns. [Contact: Miller, (303) 497-3131]

Lawton, R.A., Photoconduct ive Switches

Used for Waveform Generation at the

National Bureau of Standards, Proc.

SPIE - The International Society for

Optical Engineering, 439, pp. 88-94,

SPIE, P.0. Box 20, Bellingham, WA,

98227 (1983) [conference San Diego, CA,

August 24-26 1983].

Research in the measurement of pulse

waveforms is being conducted at the

National Bureau of Standards (NBS) in

the characterization of waveform mea- surement systems and the development of

reference waveforms. Efforts to upgrade

the state of the art of fast waveform

measurements at NBS has resulted in the

development of the first photoconductive

switch using GaAs in addition to a patent on the sampling of electrical

signals with optical signals and vice versa. These photoconductive switches

are now being applied to the development

of reference waveform generators in the

form of a Maxwel 1 -Wagner two-layer

capacitor in silicon stripline to com- plement the liquid-filled coaxial line

filters developed previously. The silicon filters are more compact, rugged,

and less expensive to fabricate. In addition, they lend themselves well to

integration with photoconductive

switches resulting in a reduction in

connector problems and pulse excitation

errors.

[(303) 497-3339]

Cryoelectronic Metrology

Recently Published

Sullivan, D.B., Radebaugh, R., Daney,

D.E., and J.E. Zimmerman, An Approach

to Optimization of Low-Power Stirling

Cryocoolers, Proc. Second Biennial

Conf. Refrigeration for Cryogenic

Sensors, NASA Conf. Publication 2287 » pp. 107-130, December 1983 [conference,

Greenbelt, MD, December 7-8, 19R2;
Page 12 CEEE Technical Progress Bulletin - April 84 (3)

Cryoel ectronic Metrology , cont'd.

abstract appeared on page 12 of July

1983 TPB ( NBSIR 83-2719-3).

Zimmerman, J.E., Daney D.E., and

Sullivan, D.B., A Cryocooler for

Applications Requiring Low Magnetic and

Mechanical Interference, Proc. Second

Biennial Conf. Refrigeration for

Cryogenic Sensors, NASA Conf. Publication 2287, pp. 95-106 (December 1983)

[conference Greenbelt, MD, December

7-8, 1982].

A very low-power, low-interference

Stirling cryocooler is being developed

based on principles and techniques

described in several previous

publications over the last four years.

It differs in several important details

from those built previously. It uses a tapered displacer based upon an

analytical optimization procedure. The

displacer is driven by an auxiliary

piston and cylinder (rather than by

mechanical linkage) using some of the

working fluid itself to provide the

driving force. This provides smooth,

vibration-free motion, and, more

importantly, allows complete mechanical

and spatial separation of the cryostat

from the pressure-wave generator.

Either of two different pressure-wave

generators can be used. One is a non- contaminating, unlubricated ceramic

piston and cylinder. The other is a compressed-air-operated rubber diaphragm

with motor-driven valves to cycle the

pressure between appropriate limits.

[(303) 497-3901]

Antenna Metrology

Released for Publication

Kanda, M., Transients in a Reslstively

Loaded Loop Antenna, paper to be

given at 1984 IEEE Electromagnetic

Compatibility Conference, Tokyo, Japan,

October 1984, and published in Digest

of that conference.

Transient characteristics of a loop

antenna loaded uniformly with a resistive material are analyzed. The current

distribution of the antenna is obtained

by the use of the Fourier series expansion technique. It is found that the

distortion of the transient waveforms

due to a resonance of a loop antenna can

be reduced and the received transient

waveforms can be tailored by resistive

1 oadi ng.

[(303) 947-5320]

Recently Published

Greenlee, D.H., Kanda, M., and Chang,

D.C., The Characteristics of Iris-Fed

Millimeter Wave Rectangular Microstrip

Patch Antennas, NBS Technical Note

1063 ( October 1983)

.

The fabrication of various iris-fed

millimeter-wave rectangular microstrip

patch antennas is described. A model is

proposed to describe the iris-fed

antenna. Irises ranging in size from 15

percent of the area of the patch to the

fully open waveguide are used to couple

energy into the antenna. Resonance of

the antenna is observed to be insensitive to the size of the iris for irises

up to 115 percent of the size of the

patch. A study is also made of the

relationship of coupling to the antenna

as a function of position of the iris

with respect to the transverse plane of

the waveguide, the iris always being

centered with respect to the patch. In general, the antenna has a VSWR in the

waveguide feed on the order of 5:1 at

resonance, except for the fully open

waveguide which gives rise to a VSWR of

2.9:1 at resonance. Far-field antenna

power patterns are observed to be quite

broad with H-plane beamwidths on the

order of 130 degrees. Maximum antenna

gain is seen to be 4.5 dB relative to an isotropic source (dBi), with 3 dBi

typical. An initial study is made of

the microstrip patch antenna fed from a longitudinal waveguide wall. Results

indicate that this feed structure is

likely to prove valuable for microstrip

patch antennas with coupling at least as good as for the transverse-fed patch
CFEE Technical Progress Bulletin - April 84 (3) Page 13

Antenna Metrology , cont'd.

added to the possibility of feeding of

multiple patches from a single

waveguide.

TContact: Kanda, (303) 497-5320]

Noise Metrology

Released for Publication

Counas, G.J., NBS 2.0 GHz to 4.0 GHz

Automated Radiometer Operation and

Service Manual, to be published as an NBSIR.

The equipment described by this manual

is the 2.0 to 4.0 GHz subsystem of the

automated radiometer. This section of

the multiband automated radiometer is a coaxial total power radiometer which

implements a six-port refl ectometer for

impedance characterization and correction and utilizes a newly developed

broadband cryogenic noise standard. NBS

noise measurement capability in this

frequency band has been expanded by the

addition of this system which adds con- tinuous frequency coverage to existing

services, along with the capability to

measure cryogenic noise sources.

[(303) 497-3546]

Halford, D. , Transparent Metrology of

Signal to Noise Ratios of Noise BandLimited Digital Signals, submitted to

IEEE Trans. Communications.

We propose the use of a template method

for quantitative, correct, and transparent measurement of signal power to

additive noise power ratios (SNR) of

digital signals and systems under full

operating conditions. Outer guard chips

of digital templates hold intersymbol

interference fixed on inner target chips

in realizations of the respective template patterns in traffic. The proposed

template method needs to be developed

and proven as a potentially valuable

metrology capability; it can be especially important for real time, online

performance assessment and monitoring of

digital communication systems.

We define a correct measurement procedure as one actually measuring a specified parameter of interest of the

specified signal, channel, device, or system. We define a transparent mea- surement procedure as one measuring the

specified parameter without degradation

of the usable channel capacity and without modification to or interference with

the functioning of the measured system.

We discuss the significance of

transparent metrology, the measurement

of various SNRs by the template method,

and the general applicability of the

template method for measurements on any

noisy digital signal. The template

method can provide transparent metrology

procedures for other basic measurands,

e.g., intersymbol interference,

multiplicative noises, and synchronization.

[(303) 497-5475].

Recently Published

Daywitt, W.C., Design and Error

Analysis for the WR10 Thermal Noise

Standard, NBS Technical Note 1071

(December 1983).

This note describes the design and error analysis of a WR10 thermal noise power

standard. The standard is designed to

operate at the boiling point of liquid

nitrogen with a noise temperature

accurate to ± 1 K. [(303) 497-3720]

Optical Fiber Metrology

Recently Published

Chamberlain, G.E., Day, G.W., Franzen,

D.L., Gallawa, R.L., Kim, E.M., and

Young, M., Optical Fiber Characterization — Attenuation, Frequency-Domal

n

Bandwidth, and Radiation Patterns,

NBS Special Publication 637, Vol. II (October 1983)

.

This is the second volume of a series

intended to describe optical fiber

measurement systems developed at the
Page 14 CEEE Technical Progress Bulletin - April 84 (3)

Optical Fiber Metrology , cont'd.

National Bureau of Standards. The

topics covered in this volume are

attenuation, bandwidth (frequency

domain), and near-field and far-field

radiation patterns. Each chapter

includes a tutorial section and a detailed description of the apparatus.

The volume concludes with a glossary of

optical communications terms.

[(303) 497-37061

Kim, E.M., Franzen, D.L., Young, M., and

Rodhe, P.M., Estimating Index

Profiles of 1.3-ym Single Mode Fibers

by Near-Field Measurements at Blue

Wavelengths, IEEE J. of Lightwave

Technology, LT-1, No. 4, pp. 562-566

(December 1983).

Near-field intensity measurements are obtained at the wavelength of 0.45 ym.

At blue wavelengths, the fibers are sufficiently multimode so the near-field

scan gives an approximation to the index

profile. Near-field scans from six

fibers are compared to actual index

profiles as determined by the refracted

ray method. Experimental near-field

scans are also compared to theoretical

predictions from a model using numerical

solutions to the scalar wave equation.

[(303) 497-3897]

Other Fast Signal Topics

Recently Published

Johnson, E., Simulating the Scratch

Standards for Optical Surfaces —

Theory, J. Applied Optics, 22,

No. 24, pp. 4056-4068 (December 1983).

I show how to simulate the scattering

generated by a scratch on the surface of

high-quality optics and their elements.

This is accomplished by first describing

how the present cosmetic scratch

standards tend to be used in the optics

industry. Second, I derive from first

principles, using the scalar model for

electromagnetic radiation, the firstorder scattering coefficients for the

far-field radiation due to a particular

scratch pattern. There are approximations made to get these coefficients.

The results allow construction of a set

of secondary scratch standards. These

are a pattern of rectangular grooves

that can be made precisely reproducible

during the manufacturing phase. Appropriate selection from this set can provide the same range of scattering

power and character as is present in the

current scratch standards, which are not

easily reproducible. Because the method

for construction of these new secondary

standards is nonrandom, to guarantee the

reproducible construction between these

standards it is necessary to restrict

the observation range to 5 to 10 degrees

from the direct beam.

[(303) 497-3234]

ELECTRICAL SYSTEMS

Power Systems Metrology

Recently Published

Hebner, R.E., Development of Power

System Measurements — Quarterly Report

January 1, 1983 to March 31, 1983,

NBSIR 83-2761 (October 1983).

This report documents the progress on five technical investigations sponsored

by the Department of Energy and

performed by or under a grant from the

Electrosystems Division, the National

Bureau of Standards. The work described covers the period January 1, 1983 to

March 31, 1983. This report emphasizes

the errors associated with measurements

of electric and magnetic fields, the

characteristics of corona in compressed

SFb gas, and the measurement of the

space charge density in transformer oil,

the development of active insulators,

and interfacial phenomena.

[(301) 921-3121]

Hebner, R.E., Kelley, E.F., FitzPatrick,

G.J., and Forster, E.O., The Effect

of Impurities on Positive Streamer
CEEE Technical Progress Bulletin - April 84 (3) Page 15

Power Systems Metrology , cont'd.

Propagation in n-Hexane, 1983 Annual

Report, Proc. Conf, Electrical

Insulation and Dielectric Phenomena,

pp. 26-34 [conference Buck Hill Falls,

PA, October 16-20, 1983].

This extended abstract of an oral

presentation describes some effects of

electrode geometry and chemical purity on the propagation of prebreakdown

streamers in n-hexane. One impurity

used was dimethyl ani 1 i ne (DMA), a material with low ionization potential,

which produced a more hemispherical

streamer than was observed in a pure

fluid. In addition, the DMA also

suppressed the transition to faster

propagation modes. ASA-3, an antistatic

additive which reduces the low-frequency

conductivity, had little effect on the

streamer propagation.

[(301) 921-31211

Kelley, E.F. and Hebner, R.E.,

Measurement of the Electric-Field in

the Vicinity of an Oi 1 -Pressboard

Interface Parallel to the Field,

Proc. Conf. Interfacial Phenomena in

Practical Insulating Systems,

pp. 19-22 (December 1983) [conference

Gaithersburg, MD, September 19-20,

19831.

Electro-optical Kerr-effect measurements

are performed to measure the spatial

variations of the electric field in

transformer oil in a parallel-plate

electrode system with and without a pressboard interface bridging the gap

between the electrodes. No space-charge

field enhancements are observed at room temperature (25°C) even with the

interface present. At 125°C, space

charge field enhancements are observed

in transformer oil, but the field

enhancement does not change upon the

addition of an interface — the field near the interface was the same as the

field away from the interface to within

the ±5% precision of the experiment.

[(301) 921-3121]

Misakian, M. and Fulcomer, P.M.,

Measurement of Nonuniform Power

Frequency Electric Fields, IEEE

Trans. Electrical Insulation, EI-18,

No. 3, pp. 657-661 (December 1983)

[abstract appeared on page 10 of April

1984 TPB ( NBSIR 84-2857-2)].

Pulse Power Metrology

Released for Publication

Hebner, R.E., The Measurement of High

Current and Voltage Pulses, to be

published in Air Force Pulse Power

Lecture Series.

This note introduces some of the

fundamental approaches to the

measurement of voltage or current

pulses. The evaluation of the

measurement process and the properties

of selected devices -- resistive and

capacitive probes, shunts, and

transformers -- are highlighted.

Electro-optical measurement of voltage

and magneto-optical measurement of

current are also discussed.

ELECTROMAGNETIC INTERFERENCE

Released for Publication

Bensema, W.D., Personal FM Transceivers, to be published as National

Institute of Justice Standard 0209.01.

This document establishes minimum performance requirements and methods of

test for frequency modulated personal

transceivers and their associated

antennas and power systems. The standard applies primarily to the lawenforcement community, and as such

covers the four frequency bands 25-50

MHz, 150-174 MHz, 400-512 MHz, and 8D6-

870 MHz.

[(303) 497-3465]

Kanda, M., Time Domain Sensors and

Radiators, to be published as chapter

in book. Time Domain Measurements In
Page 16 CEEE Technical Progress Bulletin - April 84 (3)

Electromagnetic Interference , cont'd.

Electromagnetics, Ed. E.K. Miller, Van

Nostrand Reinhold Co., Inc.

The purpose of this chapter is to discuss various sensors and radiators

commonly used for time-domain antenna

measurements. The sensors and radiators

discussed here are passive, analog

devices which convert the electromagnetic quantity of interest to a voltage

or current at their terminal ports.

Moreover, they are primary standards in

the sense that their transfer functions

can be calculated from their geometries

and are flat (constant) across a wide

frequency range.

For their usefulness in electric field

strength measurements, linear antennas

loaded non-uni formly and continuously

with resistance, or both resistance and

capacitance, are discussed. Also, a conical antenna and an asymptotic conical antenna are discussed from the

standpoint of improved antenna characteristics. Various types of TEM horns are considered for improved directivity,

e.g., a conducting TEM horn, and a resistively loaded TEM horn. For the

magnetic field strength measurements, a loop antenna with uniform resistive

loading is discussed.

[(303) 497-5320]

Wilson, P.F., Chang, D.C., and Ma, M.T.,

Input Impedance of a Probe Antenna In a TEM Cell, submitted to IEEE Trans.

Electromagnetic Compatibility.

The input impedance of a probe antenna

exciting a transverse electromagnetic

(TEM) cell is formulated via a variational approach. The resulting

impedance is shown to consist of two

distinct terms: an ordinary rectangular

waveguide contribution and a gap

perturbation. Numerical results for

both are given and suggest that a simple

algebraic approximation for the input

impedance should normally suffice. The

resistive portion is found to be

proportional to the square of the probe

length, while the reactive portion is

largely capacitive.

[(303) 497-3842]

CEEE CALENDAR

1984

April 30 - May 4 (Boulder, CO)

NBS Noise Measurement Seminar. The course is intended for practicing noise

metrologists and technical managers

responsible for systems for which

accurate noise measurements are

important. The seminar introduces and

describes reference noise sources, noise

measuring systems, and the problems of

characterizing and measuring noise in

passive components, amplifiers, and

satellite earth terminals. Class

examples will specifically address the

measurement of noise power; amplifier

noise; and antenna system noise,

including measures such as noise

equivalent flux, the ratio of system

gain to system noise temperature G/T,

and the ratio of carrier power to noise

density C/kT.

The course will cover both theory and

practice of precision noise measure- ments; the practical lectures are designed to stand alone and to be

understood by those having minimal

mathematical background.

[Contact: Sunchana Perera (303)

497-3546]

June 18-21 (Gaithersburg, MD)

Power Electronics Specialists

Conference. Co-sponsored by the

Power Electronics Council of the

Institute of Electrical and Electronics

Engineers and the National Bureau of

Standards, the Conference is intended to

provide a venue where specialists in

circuits, systems, electron devices,

magnetics, control theory, instrumentation, and power engineering may

discuss new ideas, research,

development, applications, and the
CEEE Technical Progress Bulletin - April 84 (3) Page 17

CEEE CALENDAR, cont'd.

latest advances in power electronics.

The Conference will incorporate six

technical sessions (on converter

circuits, converter systems, converter

control, motor drives, power components,

and modeling and analysis techniques),

a one-day tutorial on Electromagnetic

Compatibility in Power Systems, and

three special "rap sessions" (EMI, RFI,

and Noise: Fact or Fiction; Emerging

Power Semiconductors: Positive and

Negative Attributes; and Future Trends

in Aircraft Power Electronics and

Electrical Actuators).

TContact: Sandra B. Kelley (301)

921-3541]

August 28-30 (Vail, CO)

Short Course on Optical Fiber

Measurements. This course is

addressed to scientists and engineers

who are involved in fiber

characterization. The course will

emphasize concepts, techniques, and

apparatus used in measuring the

engineering parameters of

telecommunication-grade fibers. A

degree in electrical engineering or physics is assumed. The course will

last three days with 18 hours of class

time.

[Contact: Robert L. Gallawa (303)

497-3761]

October 15-17 (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers. The Symposium is the

principal forum for the exchange of

information on the physics and

technology of materials for high-power

lasers. Topics to be discussed include

new materials, bulk damage phenomena,

surface and thin film damage, design

considerations for high-power systems,

and fundamental mechanisms of laserinduced damage. The series of

conference proceedings resulting from

these annual symposia has collectively

become the principal repository of

information on optics for all aspects of

high-power/high-energy lasers,

including, in addition to the subjects

given above, environmental degradation,

durability, fabrication, material growth

and deposition processes, and testing.

[Contact: Aaron A. Sanders (303)

497-5341]

NEW STANDARD REFERENCE MATERIALS

Two new Standard Reference Materials

(SRMs) for calibrating equipment used to

make spreading resistance measurements

have been released by the Semiconductor

Materials and Processes Division to the

NBS Office of Standard Reference

Materials for sale to the public. SRM

2526 applies to (lll)-oriented p-type

silicon surfaces and SRM 2527 to Tlll)-

oriented n-type silicon surfaces. Each

SRM consTsts of a set of about 15

specimens (number of specimens varies

depending on availability of material of

appropriate resistivities) of silicon,

6 x 12 mm in area and mounted on beveled

metal blocks for convenient use in

calibrating commercial spreading

resistance equipment. These silicon

chips have resistivities ranging from

about 0.001 to 200 ft»cm. Slices are measured before dicing; only slices

having uniformity of resistivity within

predetermined bounds are selected. The

The uncertainties in resistivity range

typically from 2 to 5 percent for p-type

specimens and from 4 to 10 percent for

ji-type. Two companion SRMs for (110)

silicon surfaces are about to be

released (2528, £-type and 2529, ntype)

.
Page 18 CEEE Technical Progress Bulletin - April 84 (3)

SPONSORS OF WORK REPORTED IN THIS ISSUE

National Bureau of Standards

Department of Defense

Defense Advanced Research Project

Agency; Calibration Coordination

Group; Defense Nuclear Agency

U.S. Air Force

Air Force Office of Scientific

Research; Air Force Satellite

Control Facility; Bolling Air Force

Base; Kirtland AFB; Newark Air

Force Station; Rome Air Development

Center; Space Division; WrightPatterson AFB

U.S. Army

Army Electronic Proving Ground;

Aviation Research & Development

Command; Ballistic Missile Defense

Systems Command; Fort Huachuca; Fort

Monmouth; Harry Diamond

Laboratories; Materials & Mechanics

Research Center; Redstone Arsenal;

TMDE Support Group

U.S. Navy

Aviation Logistics Center (Patuxent

River); Aviation Research and

Development Command; Medical

Research & Development Command;

Metrology Engineering Center (Seal

Beach); Naval Air Systems Command;

Naval Air Test Center; Naval Sea

Systems Command; Naval Ship Research

& Development Center; Naval Surface

Weapons Center; Naval Weapons

Support Center (Crane); Office of

Naval Research

Department of Energy

Bonneville Power Administration;

Energy Systems Research; Fusion

Energy

Department of Justice

Law Enforcement Assistance

Admi nistration

Department of Transportation

National Highway Traffic Safety

Admi nistration

Charles Stark Draper Laboratory

Environmental Protection Agency

International Copper Research

Associ ation

National Aeronautics and Space

Administration

Lewis Research Center

National Security Agency

Sandia National Laboratories

Note on Publication Lists : Guides to

earlier as well as recent work are the

publication lists covering the work of

each division. These lists are revised

and reissued on an approximately annual

basis and are available from the

originating division [publications from

the Semiconductor Technology Program are covered in a single list, available from

either Semiconductor Division].
NBS-114A (rev. 2 -aC) U.S. DEPT. OF COMM.

BIBLIOGRAPHIC DATA

SHEET (See instructions)

1. PUBLICATION OR

REPORT NO.

NBSIR 84-2857-4

2. Performing Organ. Report No.' 3. Publication Date April 1984

4. TITLE AND SUBTITLE

Center for Electronics and Electrical Engineering Technical Progress Bulletin

Covering Center Programs, October - December 1983 with 1984 CEEE Events Calendar

5. AUTHOR(S)

Compiler: J. Franklin Mayo-Wells

6. PERFORMING ORGANIZATION (If joint or other than NBS. see instructions)

national bureau of standards

DEPARTMENT OF COMMERCE

WASHINGTON, D.C. 20234

7. Contract/Grant No.

8. Type of Report & Period Covered

October - December 1983

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City. State. ZIP)

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

10. SUPPLEMENTARY NOTES

All technical information included in this document has been approved for

publication previously.

i

! Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bibliography or literature survey, mention it here

)

This is the fifth issue of a quarterly abstract journal covering the work of the

National Bureau of Standards Center for Electronics and Electrical Engineering.

This issue of the Center for Electronics and Electrical Engineering Technical

Progress Bulletin covers the fourth quarter of calendar year 1983. Abstracts

are provided by technical area for both published papers and papers approved by

NBS for publication.

12. KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words p

y

semico'onsy

antennas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers;

semiconductors; superconductors.

13. AVAILABILITY

|~Xl Unlimited

\ | For Official Distribution. Do Not Release to NTIS

| Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C.

20402.

j_X| Order From National Technical Information Service (NTIS), Springfield, VA. 22161

14. NO. OF

PRINTED PAGES

22

15. Price $7.00

U §C Omm- OC 904)**9
CENTER FOR

ELECTRONICS AND ELECTRICAL ENGINEERING

ELECTROMAGNETIC H FIELDS

DIVISION H

Applied Electrical Measurements

Electronic *— Instrumentation and Metrology

H

H

H

Antenna Systems

Metrology

Fields Characterization

Interference

Characterization

ELECTROMAGNETIC rl TECHNOLOGY

DIVISION

-I Microwave Metrology

JOptical Electronic [Metrology

JCryoelectronics

I Metrology

Superconductors

and Magnetic

Materials

KEY CONTACTS

SEMICONDUCTOR

MATERIALS AND

PROCESSES

DIVISION H

H

Silicon Characterization

Process Control Measurements

^ Micrometrology

H

Compound

Semiconductor HProcessing Facility

SEMICONDUCTOR

DEVICES AND

CIRCUITS

DIVISION

H

Integrated

Circuit Test

Structures

Device and Process

Modeling

Device

Metrology

NBS/CEEE/FEB 84

Center (720)

Mr. Judson C. French (301) 921-3357

Dr. Alvin H. Sher (301) 921-3357

Ms. Carol P. Mullis (301) 921-3357

Director

Deputy Director

Administrative Officer

Electrosystems Division (722)

Chief

Electromagnetic Fields Division (723)

Chief

Electromagnetic Technology Division (724)

Chief Dr. Robert A. Kamper (303) 497-3535

Semiconductor Materials and Processes Division (725)

Chief Mr. Robert I. Scace (301) 921-3786

Semiconductor Devices and Circuits Division (726)

Dr. Oskars Petersons (301) 921-2328

Mr. Charles K.S. Miller (303) 497-3131

Chief Dr. Kenneth F. Galloway (301) 921-3541

INFORMATION:

For additional information on the Center for Electronics and Electrical

Engineering, write to or call:

Center for Electronics and Electrical Engineering

National Bureau of Standards

Metrology Building, Room B-358

Gaithersburg, Maryland 20899 Telephone (301) 921-3357

USCOMM-NBS-DC