NASA/TM--1998-208817 AIAA-98-3614

A Hazardous Gas Detection

Aerospace and Commercial

G.W. Hunter, P.G. Neudeck, and L.-Y. Chen

Lewis Research Center, Cleveland, Ohio

D.B. Makel

Makel Engineering, Chico, California

C.C. Liu and Q.H. Wu

Case Western Reserve University, Cleveland, Ohio

D. Knight

Cortez III Service Corporation, Cleveland, Ohio

System for

Applications

November 1998

https://ntrs.nasa.gov/search.jsp?R=19990009863 2018-05-11T16:58:26+00:00Z
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NASA/TM--1998-208817 AIAA-98-3614

A Hazardous Gas Detection

Aerospace and Commercial

System for

Applications

G.W. Hunter, P.G. Neudeck, and L.-Y. Chen

Lewis Research Center, Cleveland, Ohio

D.B. Makel

Makel Engineering, Chico, California

C.C. Liu and Q.H. Wu

Case Western Reserve University, Cleveland, Ohio

D. Knight

Cortez III Service Corporation, Cleveland, Ohio

Prepared for the

34th Joint Propulsion Conference and Exhibit

cosponsored by AIAA, ASME, SAE, and ASEE

Cleveland, Ohio, July 12-15, 1998

National Aeronautics and

Space Administration

Lewis Research Center

November 1998
Acknowledgments

The authors would like to acknowledge the helpful discussions with Dr. W.D. Williams, Dr. Jih-Fen Lei,

Dr. Herbert Will, Dr. David Larkin, and Dr. Daniel L.P. Ng of NASA LeRC, W.T. Powers and Martin Johnson

of NASA Marshall Space Flight Center, Roselle Hanson and Greg Hall of Kennedy Space Center, and the

technical assistance of D. Androjna and C. Salupo of Cortez III/NASA LeRC. L. Chen is a NRC Fellow

with Gary Hunter as an advisor.

NASA Center for Aerospace Information

7121 Standard Drive

Hanover, MD 21076

Price Code: A03

Available from

National Technical Information Service

5285 Port Royal Road

Springfield, VA 22100

Price Code: A03
A HAZARDOUS GAS DETECTION SYSTEM FOR AEROSPACE AND COMMERCIAL APPLICATIONS

G.W. Hunter, P.G. Neudeck, and L.-Y. Chen

National Aeronautics and Space Administration

Lewis Research Center

Cleveland, Ohio 44135

D.B. Makel

Makel Engineering

Chico, California 95973

C.C. Liu and Q.H. Wu

Case Western Reserve University

Electronics Design Center

Cleveland, Ohio 44106

D. Knight

Cortez III Service Corporation

Cleveland, Ohio 44 135

ABSTRACT

The detection of explosive conditions in aerospace

propulsion applications is important for safety and economic reasons. Microfabricated hydrogen, oxygen, and

hydrocarbon sensors as well as the accompanying

hardware and software are being developed for a range

of aerospace safety applications. The development of

these sensors is being done using MEMS (Micro ElectroMechanical Systems) based technology and

SiC-based semiconductor technology. The hardware

and software allows control and interrogation of each

sensor head and reduces accompanying cabling through

multiplexing. These systems are being applied on the

X-33 and on an upcoming STS-95 Shuttle mission. A

number of commercial applications are also being pursued. It is concluded that this MEMS-based technology

has significant potential to reduce costs and increase

safety in a variety of aerospace applications.

INTRODUCTION

The detection of explosive combinations of fuel

and oxygen is important in the aerospace industry for

safety monitoring applications. Specifically, leaks in

fuel tank systems can lead to hazardous situations. If

the leak location and magnitude cannot be determined

in a timely manner, the consequences can range from

expensive delays to loss of life. For example, in 1990,

the leaks on the Space Shuttle while on the latmch pad

temporarily grounded the fleet tmtil the leak source

could be identified.

In response to the hydrogen leak problems in particular, NASA endeavored to improve propellant leak

detection capabilities during assembly, pre-launch

operations, and flight. The objective has been to reduce

the operational cost of assembling and maintaining

hydrogen delivery systems by using automated detection systems. Specifically, eftorts were made to

develop an automated hydrogen leak detection system

using point-contact hydrogen sensors. However, no

commercial sensors existed at that time that operated

satisfactorily in this application. The reason for this is

the conditions in which the sensor must operate.

The hydrogen sensor must be able to detect hydrogen from low concentrations through the lower

explosive limit (LEL) which is 4% in air. The sensor

must be able to survive exposure to 100% hydrogen

without damage or change in calibration. Further, the

sensor may be exposed to gases emerging from cryogenic sources. Thus, sensor temperature control is

necessary. Operation in inert environments is necessary

since the sensor may have to operate in areas purged

with helium. If a number of sensors are to be placed in

an area, then size, weight, and power consumption for

each sensor becomes an issue. Commercially available

sensors, which often needed oxygen to operate or depended upon moisture 1, did not meet the needs of this

application and thus the development of new types of

2

hydrogen sensors was necessary.

However, it is not just the concentration of hydrogen that determines if an explosive condition exits but

the corresponding concentration of oxygen as well.

NASA/TM--1998-208817 1
Thus,thesimultaneous measurement of oxygenaswell

ashydrogenisdesirableinsafetyapplications. Further,

theneedsof futureaerospaceapplicationsmayrequire

notonlythedetectionofhydrogenbutotherhydrocarbonfuelswhichmaybeusedaspropellants. Forexample,theuseofmethaneorkeroseneaspropulsionfuels

meansthatthedetectionof thesehydrocarbons iinert

environments maybenecessaryforleakdetectionfor

futurepropulsionsystems.Thesesensortechnologies

wouldhaveto meetthe samerequirementsa the

hydrogensensortechnologyof minimalsize,weight,

and powerconsumption. Miniaturized,integrated

hydrocarbonleakdetectiontechnologyofthistypedoes

notpresentlyexist.

Inconjunctionwithimprovedsensortechnology, a

completelakdetectionsystemalsoneedsaccompanyinghardwareandsoftware.Beingabletomultiplexthe

signalfromanumberofsensorssoasto"visualize"the

magnitudeandlocationof theleakisnecessary. The

hardwareshouldbemultiplexedtolimit theamountof

cablingnecessarytooperatethesystemandintelligent

controlofeachsensorheadisrequired.

NASALewisResearchCenter(LeRC),Case

WesternReserveUniversity(CWRU),and Makel

EngineeringInc.(MEI)areactivelyinvolvedin developing leak sensortechnologyas well as the

corresponding hardwareandsoftwaretomeettheneeds

of aerospaceapplications.Thesensorfabricationis

performedusingMEMS(MicroElectroMechanical

Systems) basedtechnologyi.e.usingsilicon(Si)integratedcircuitprocessingtechnology.Thisresultsin

miniaturizedsensorswhichcanbemicro-machined for

minimalsize,weight,andpowerconsumption. Also

beingexploredaresensorswhichusehightemperature

siliconcarbide(SIC)semiconductors. Smartelectronics

areincludedwiththesystemto providetemperature

controlforthesensorandtointerpretthesensoroutput.

Thepurposeof thispaperistodiscussthedevelopmentof thistechnology.Wewill firstdiscussthe

development of hydrogen,oxygen,andhydrocarbon

sensortechnology.Wewill thendiscussthehardware

andsoftwareassociatedwiththehydrogensensortechnologyandthecurrentapplicationofthistechnologyto

X-33applicationsandto theSpaceShuttlemission

STS-95.Potentialcommercial applicationsof these

technologies arealsodiscussed. It isconcludedthatthe

continueddevelopment of thistechnologywill enable

improvedsafetyforflightpropulsionapplications.

HYDROGEN DETECTION

One component of the sensor development program at NASA LeRC and CWRU in conjtmction with

MEI involves the development of palladium (Pd) alloy

Schottky diodes on silicon (Si) substrates. These sensors are designed to detect hydrogen (H2) in space

applications. This type of sensor is based on metaloxide-semiconductor (MOS) technology such as that

used in the semiconductor electronics industry. The gas

sensing MOS structures are composed of a hydrogen

sensitive metal deposited on an insulator adherent to a

semiconductor. This forms a Schottky diode in the case

of a very thin layer of insulator. The most common

MOS structure used for hydrogen detection is the

Pd-SiO2-Si structure. Hydrogen disassociates on the Pd

surface and diffuses to the Pd-SiO2 interface affecting

the electronic properties of the MOS system. 3 The use

of pure Pd at near room temperatures as the hydrogen

sensitive metal is problematic for several reasons. The

most serious of these involves a phase change that

occurs at high hydrogen concentrations which can lead

to hysteresis or film damage.

Schottky diodes using Pd alloys as the hydrogen

sensitive metal are presently being fabricated. The first

generation of these sensors used palladium silver

(PdAg). The use of PdAg in hydrogen sensing applications was pioneered by Hughes. 4 Palladium silver has

advantages over Pd. Palladium silver is more resistant

to damage from exposure to high hydrogen concentration than Pd. Furthermore, the alloy has faster response

times than Pd.

The sensor structure is shown in Figure 1 with a

picture of the packaged sensor. The structure includes a

Pd alloy Schottky diode, a temperature detector, and a

heater all incorporated in the same chip. The sensor is

fabricated using° a n-type silicon wafer on which approximately 50 A of silicon dioxide (SiO2) is thermally

grown in the sensor region. The heater and temperature

detector are platinum covered with SiO2. Gold leads

are applied by thermal compression bonding and the

sensor is mounted on a TO5 header or on a ceramic flat

package. The surface area of the Schottky diode is

6.1x10 3 cm 2 and the complete sensor dimensions are

approximately 2.2 mm on a side. The response of the

Schottky diodes was determined by measuring the diode's reverse current.

NASA/TM--1998-208817 2
Pd-ALLOY SCHOTTKY

 DIOD ONNTO !m

SE A;_

HEATER TEMPERATURE HEATER

CONNECTOR DETECTOR CONNECTOR

CONNECTOR

Figure 1. Design and complete package of a wide range Pd

alloy hydrogen sensor. The sensor package includes a

Schottky diode hydrogen sensor, a temperature detector,

and a heater. A hydrogen sensitive resistor is added for X33 applications (see pg. 5).

The properties of the PdAg sensor make it very

useful for applications where sensing small amounts of

hydrogen is necessary. The sensor responds in an inert

environment (no oxygen) to the presence of hydrogen.

The presence of oxygen decreases the sensor response

but the sensor is still sensitive to low concentrations of

hydrogen. 56 The sensor response is large, rapid, and

repeatable. If quick recovery is necessary, then the sensor should be operated in oxygen containing gases. If

detection of hydrogen is required without rapid recovery, then this sensor can also be used in inert environments. The sensor responds to hydrogen across a wide

concentration range with a signal and response time that

is temperature dependent. This sensor can be used to

monitor leaks in a multipoint leak detection scheme

involving a number of these sensors. Further, this PdAg

sensor has been shown to have a sensitivity and

7

response comparable to that of a mass spectrometer.

2.0E-04

1.8E-04

<_1.6E-04

I--

z 1.4E-04

n-'

1.2E-04

_1.0E-04

_8.1E-05

>

_6.1E-05

4.1E-05

2.1E-05

1.0E-06

0

T=100 C

APPLIED VOLTAGE = - 5 V

=:

• II._r

liN2

=I

50 100 150 200

TIME(MIN)

Figure 2. The response of PdAg and PdCr Schottky diode

sensors at 100°C to repeated exposures of 9 minutes of air,

1 minute of nitrogen, 10 minutes of 100% hydrogen, and 1

minute of nitrogen. The PdCr diode shows a more repeatable baseline and a more stable response than the PdAg

diode.

Although the PdAg sensor showed excellent properties for a number of applications, exposure to higher

temperatures and higher hydrogen concentrations

changed the sensor calibration and occasionally led to

the sensor failure. 56 An example of the degradation of

the PdAg sensor response at higher temperatures and

higher hydrogen concentrations is shown in Figure 2.

The response of a PdAg sensor to 100% hydrogen at

100°C for several cycles is shown. The sensor response

decreases with the number of exposures and with a

much poorer recovery to the original baseline after each

cycle.

One significant reason for this behavior may be

seen in Figure 3. Figure 3 shows an optical micrograph

(400x) of an as-deposited PdAg sensing pad of the

Schottky diode (Figure 3a) and a sensing pad from the

PdAg sensor (Figure 3b) characterized at 100°C in

100% hydrogen in Figure 2. The as-deposited PdAg

film is uniform in surface features and the edges of the

film are straight and rectangular. In contrast, the PdAg

film in the characterized sample shows significant

peeling of the PdAg near the edges of the sensor pads

rectangular pattern and a significant amount of surface

features. EDAX (Energy Dispersion Analysis of

X-Radiation) analysis of the region near the edge of the

sensor pad in Figure 3b suggests that the PdAg has been

removed from the surface leaving only the SiO2 layer.

Thus, a likely reason for the change in the sensor response with heating and exposure to 100% hydrogen is

this delamination of the PdAg sensing film near the

edges of the sensor pad.

NASA/TM--1998-208817 3
Therefore, the sensor structure needs to be stabilized for operation in 100% hydrogen (as in the Shuttle

application). This led to the development of the next

generation of sensor. This sensor, which uses PdCr as

the hydrogen sensitive alloy, is in its later stages of development. The response of the PdCr Schottky diode to

100% hydrogen at 100°C is also shown in Figure 2.

The PdCr sensor is much more stable than the PdAg

sensor under these conditions; the PdCr diode response

to 100% hydrogen is nearly consistent (after the initial

exposures) with an equally consistent return to a

common baseline. The optical micrograph of the corresponding PdCr sensor pad (Figure 3c) shows some degradation of the film surface. However, the PdCr film

does not exhibit the peeling of the sensing film near the

edge of the sensing pad as was seen with the PdAg film.

Parallel tests to those of Figure 2 were conducted

at 100% hydrogen with a different PdCr sensor and an

operating temperature of 75°C. The PdCr sensor response was similar to that seen in Figure 2. However,

as seen in Figure 3d, there is significantly less surface

structure on the sensor film surface with generally good

adhesion of the film to the rectangular boundaries of the

sensor pad.

Therefore, PdCr shows signifiCanotly improved

stability and response over PdAg at 100 C. Operation

at 70°C results in more stable surface features than

100°C operation. The results of these tests and other

testing suggest that PdCr is better for applications

where the sensor is exposed to higher hydrogen concentrations while PdAg can be used for lower hydrogen

concentration applications.

This has led to the use of PdCr both as a hydrogen sensitive resistor and a Schottky diode material to expand

the detection range of the sensor for X-33 applications

(Figure 1); a Schottky diode provides sensitive detection of low concentrations of hydrogen while the resistor provides sensitivity up to 100% hydrogen.

The resistors have been fabricated so as to have the highest sensitivity to concentrations of hydrogen greater than

1%. This is shown in Figure 4 for 7 resistive sensors

exposed to hydrogen in nitrogen from 10 ppm to 1"106

ppm (100%). The resistor response is conditioned by

electronics to result in changes in millivolts (mV) as

shown in the Figme. The signal increases significantly

with higher concentrations of hydrogen and the response

of the 7 resistors is seen to be generally uniform.

a) PdAg b) PdAg

As-deposited Alter testing at 100°C

c) PdCr

After testing at 100°C

d) PdCr

After testing at 70°C

Figure 3. Optical Micrographs of the sensor pad of: a)

PdAg sensor as-deposited; b) PdAg sensor after heating

and characterization in 100% H2 at 100°C ; c) PdCr sensor

after heating and characterization in 100% H2 at 100°C; d)

PdCr sensor after heating and characterization in 100%

H2 at 75°C. The PdCr sensor does not show delamination

of the sensor film near the edges of the sensor pad evident

with the PdAg-based sensor.

NASA/TM--1998-208817 4
45OO

3500

25OO

1500

5OO

0 10 100 1000 10000 100000 10000000

HYDROGEN CONCENTRATION (ppm)

Figure 4 . PdCr hydrogen resistor response to different

hydrogen gas concentrations.

The response of both the Schottky diode and the

resistor on the same chip is shown in Figure 5. The

temperature is held constant at 70°C while the sensor

package is exposed to hydrogen concentrations from

1000 ppm to 100%. The output is signal conditioned

and presented in millivolts. The signal of the diode

shows the highest sensitivity and quickest recovery

times at lower concentrations while the resistor provides

high sensitivity at higher concentrations of hydrogen.

3600

f

0

0 100 200 300 400 500 600 700 800

(SECONnS)

Figure 5. Typical sensor response and recovery to step

changes in hydrogen concentration for a temperature

controlled PdCr Schottky diode and resistor.

Therefore, two alloys are used to measure hydrogen in

inert environments. Palladium silver can be used for sensitive measurement of low concentrations of hydrogen

while PdCr can be used as a diode and resistor material

for a range of concentrations up to 100% hydrogen.

OXYGEN DETECTION

The development of a microfabricated 02 sensor

has been initiated to complement the existing hydrogen

sensor technology. Commercially available oxygen sensors are typically electrochemical cells using

zirconium dioxide (ZrO2) as a solid electrolyte and Pt as

the anode and cathode.8 The anode is exposed to a reference gas (usually air) while the cathode is exposed to

the gas to be detected. Zirconium dioxide becomes an

ionic conductor of O at temperatures of 600°C and

above. This property of ZrO2 to ionically conduct oxygen means that the electrochemical potential of the cell

can be used to measure the ambient oxygen concentration at high temperatures. However, operation of these

commercially available sensors in this potentiometric

mode limits the range of oxygen detection. Typically,

the potentiometric mode has limited sensitivity above

1% oxygen. Further, the current manufacturing

procedure of this sensor, using sintered ZrO2, is

relatively labor intensive and costly resulting in a

complete sensor package with a power consumption on

the order of several watts.

The objective of this research is to develop a zirconium dioxide solid electrolyte oxygen sensor using microfabrication and micromachining techniques. A

schematic of the sensor design is shown in Figure 6 with

a picture of the packaged sensor. A diaphragm region is

micro-machined by etching beneath the sensing area.

Microfabricating the sensor components onto the

diaphragm region allows the sensor to be small in size

and have decreased energy consumption and time for

thermal equilibrium. When operated in the

amperometric mode, the current of this cell is a linear

function of the ambient oxygen concentration. This linear response to oxygen concentration significantly

increases the oxygen detection range of the sensor. A

chamber structure with a well-defined orifice is micromachined to cover the sensing area. This orifice provides a pathway to control oxygen diffusion which is

important in amperometric measurements. This orifice

also protects the integrity of the sensing electrode from

impinging particles. Preliminary testing of a complete

oxygen sensor has been accomplished and further

improvements on the design are planned.

NASA/TM--1998-208817 5
ZirconiumDioxide _

SlficonNltrtde

Silicon Dioxide _

Platinum

ELECTROCHEMICAL

CELL REGION

CHAMBER REGION

/ \

/ \ i

SiLiCON \\ SILICON i

[

\ f

DIAPHRAGM REGION \

\__

Figure 6. Design and complete package of an amperometric ZrO2 Oxygen Sensor.

The completed oxygen sensor will be incorporated

into one sensor package with the existing PdCr

hydrogen sensor. The combined system will be able to

measure the concentration of hydrogen and oxygen

simultaneously. The ratio of the hydrogen to oxygen concentration will not only determine if there is a leak but if

there is an explosive condition. However, if the fuel is not

hydrogen, leak detection of the fuel in inert environments

using point-contact sensors is not presently commercially

available. Thus, the development of corresponding hydrocarbon leak sensor technology is necessary.

HYDROCARBON DETECTION

The development of hydrocarbon sensors for use

in safety applications has centered on the development

of a stable SiC-based Schottky diode. There are significant advantages in a number of gas sensing applications

to using SiC as the semiconductor rather than Si. 9

These advantages are due to the improved material

properties of SiC over Si such as high temperature

semiconductor operation, superior mechanical toughness, and increased thermal conductivity. The detection of gases such as hydrocarbons, which decompose at

high temperatures, is facilitated by heating the sensor to

the gas decomposition temperature. 1° 12 The hydrocarbons then dissociate and produce atomic hydrogen. The

resulting atomic hydrogen affects the sensor output in

the same way as molecular hydrogen.

The SiC-based Schottky diode structure under

development has begun with Pd on SiC (Pd/SiC) MS

structures. Direct contact between the gas sensitive

catalytic metal and the semiconductor allows changes in

the catalytic metal to have maximum effect on the

semiconductor. Studies of this baseline system help

determine limits of diode sensitivity, potential material

interactions between Pd and SiC, and whether a barrier

layer between the Pd and SiC is necessary for long-term

sensor stability. The details of this work are reviewed

elsewhere.11 The sensor detects hydrogen and

hydrocarbons in inert or oxygen containing

environments.

Figure 7 illustrates the advantage of SiC over Si in

hydrocarbon sensing applications. Shown is the zero

bias capacitive response of a Pd/SiC Schottky diode to

one hydrocarbon, propylene, at a range of temperatures.

The sensor temperature is increased from 100°C to

400°C in steps of 100°C and the response of the sensor

is observed. At a given temperature, the sensor is

exposed to air for 20 minutes, N2 for 20 minutes,

360 ppm of propylene in N2 for 20 minutes, N2 for

10 minutes, and then 10 minutes of air.

The magnitude of sensor response to 360 ppm

propylene depends strongly on the operating

temperature. A sensor operating temperature of 100°C

is too low for propylene to dissociate on the Pd surface,

so the device does not respond at all. The three other

curves for 200°C, 300°C, and 400°C show that elevating

the temperature increases the sensor's response to

propylene. The presence of propylene can be detected

at any of these higher temperatures with 200°C being

the minimum operating temperature determined in this

study. Since the standard long-term operating

temperature of Si is usually below 200°C, these results

demonstrate the significant advantages of using SiC

rather than Si in gas sensing applications.

NASA/TM--1998-208817 6
16.5

15.5

VOLTAGE [] 0 V PROPYLENE

TEMPERATURE

,.,14.5 _ lOOc

_. • 200c

_13.5 © 300c

Z 0 400 C

<

_j12.5

<

O.

<11.5 AIR

N2

N2

10.5

9.5 I I I

0 20 40 60 80

TIIVlE(IVlIN)

Figure 7. The temperature dependence of the zero bias

capacitance to various gas mixtures of a Pd/SiC Schottky

diode. The response to propylene is seen to be strongly

temperature dependent.

However, the Pd/SiC sensor response is affected

by extended l]igh temperature heating. Prolonged

heating at 425 C has been shown to change the sensor

properties and to decrease sensor sensitivity. 11 Even

after heating at 425°C in air for 140 hours, the Pd/SiC

Schottky diode is still very sensitive to the presence of

hydrogen: a factor of 1000 change in forward current is

observed upon exposure to 1000 ppm hydrogen in He.

The reason for this change in diode properties is likely

due to reactions between the Pd and SiC at the interface

upon heating. Nonetheless, eftorts have been underway

to stabilize the sensor structure for long-term, high

temperature operation.

One new structure 13 demonstrated which has

improved stability over that of Pd/SiC is PdCr directly

deposited on SiC (PdCr/SiC). The advantages of PdCr

as a high temperature alloy have been explored extensively in strain gage applications. 14 It is a stable high

temperature material which is able to provide static

strain measurements at temperatures up to l l00°C.

However, its use in a gas-sensing SiC-based structure

depends on not only its inherent stability but also such

factors as the alloy's reactivity to SiC and the catalytic

interactions of PdCr alloy with the gases to be measured.

The response of a PdCr/SiC diode to long term

heating of 250 hours at 425°C showed improved stability over Pd/SiC. Monitoring of the sensor

performance periodically during the heating period

suggests the PdCr/SiC diode has improved stability over

the Pd/SiC structure. The sensor is characterized at

100°C after heating at 425°C. Current-time measurements at 0.7 V were taken as the sensor was exposed to

20 minutes of air, 20 minutes in nitrogen (N2), 20 minutes of 120 ppm H2 in N2 (N2/H2 mix), 10 minutes of

N2, and then 10 minutes of air. After an initial break-in

period of near 40 hours, the results show that the sensor

response in hydrogen is relatively constant.

This is illustrated in Figure 8 where the diode response

after 40 and 250 hours of heating is compared.

Although the sensor baseline in air is much lower after

250 hours of heating than at 40 hours, the sensor current

in the N2/H2 mix is the same within a factor of 3. Thus,

the diode's response to hydrogen after 250 hours of

heating is nearly two orders of magnitude larger at this

voltage than at 40 hours.

Therefore, the high sensitivity and improved stability of the PdCr/SiC sensor allows the sensitive detection

of hydrogen. The use of SiC as a semiconductor expands the temperature range of hydrogen detection and

also allows the detection of hydrocarbons. Testing of

the PdCr alloy at high temperature is planned to determine the diode's sensitivity to a range hydrocarbons.

Future work will also include packaging of the

SiC-based sensor for leak detection applications.

1.0E-04

1.0E-05

1.0E-06

g

i- 1.0E-07

Z

LU

¢ 1.0E-08

o

1.0E-09

1.0E-10

1.0E-11

VOLTAGE=0.7V

T = 100C N21H2MIX N2

AIR N2

lll-e_ tggl40 HOURSHEATING

250HOURSHEATING

I I I

0 20 40 60 80

TIME(MIN)

Figure 8. The forward current vs time at 100°C after 40

hours (I) and 250 hours (&) heating at 425°C in air of a

PdCr/SiC Schottky diode. The diode show improved sensitivity with heating with nearly the same response to 120

ppm hydrogen in nitrogen.

NASA/TM--1998-208817 7
SYSTEM DEVELOPMENT AND APPLICATION

The initial incorporation of the PdAg sensor into

hardware and software has been reported elsewhere. 6

MEI, CWRU, and NASA LeRC have subsequently developed a "Smart Sensor" for hydrogen gas detection

under an STTR contract from NASA MSFC. A broad

range of operational system payoffs are possible with

this type of complete leak detection system. These payoffs include: 1) Improved Integrated Vehicle Health

Management (IVHM); 2) Improved safety and reliability; 3) Reduced sensor size and weight yielding

reduced vehicle weight; 4) Cost effective method to

instrument the vehicle.

Current aerospace applications of the Pd alloy

sensors include the hydrogen leak detection systems for

NASA's X-33 Flight Demonstrator and an up coming

Space Shuttle technology demonstration flight for STS95. For these applications robust signal conditioning

and control electronics have been developed to operate

the sensors. A block diagram of our desired functionality is shown in Figure 9.

PWM Heater Control

Redundant Analog

Microcontroller

Redundant Analog

Serial

Interface

I Ref. I

I-- "_ _ Heater Power

14-20rnA Trans rnitte_9tL I I

_lnstrurnent _ I

_.ArTher mist° t Sent

-.._ I lnstrurnent _ I

Sensor A/D Converter

4 Diff. Channels

PWM Heater Control

lnstrurnent

'_'] I Instrument Yhermist° t

I Sent )r2

I-- I Amp I Sensor I

I

r ,.,

14-20rnA Transrnittef'_r

I.

Heater Power

...... Optional

Figure 9. Smart Sensor Electronics Provides Signal Conditioning, Power Conditioning, Sensor Control, Calibration

Storage, Conversion To Engineering Units and Digital Interface.

The Smart Sensor electronics currently consist of a

power converter board, signal conditioning board, and a

microcontroller board. The control system is based on

an eight-bit microcontroller. Integrated microcontrollers are well suited for control applications of this nature due to its onboard peripherals, in particular the

Programmable Counter Array. Several PCA channels

are programmed to act as Pulse Width Modulators to

control sensor heater elements. Another channel is used

as a Watch Dog Timer to protect against errant firmware execution.

An external Address/Data bus allows for program

fetches, data storage in non-volatile SRAM, and access

to the Analog to Digital Converter. A reset device provides a reliable power-on reset to the CPU and also

monitors Vcc. If Vcc is outside a predetermined range,

the CPU is placed in reset tmtil Vcc returns to acceptable levels. Serial communication is provided, and both

RS-232 and RS-485 levels are supported. Analog sensor

signals are acquired from the sensor amplifier board

using an analog to digital converter. Twelve-bit resolution ensures a high degree of accuracy. Sensor

NASA/TM--1998-208817 8
temperature data is used to provide closed loop control

of the sensor temperature. The controller board is combined with a sensor amplifier board and a power supply

board to produce a very compact data acquisition and

control system. When assembled, the board stack

measures approximately 1.3" by 2.1" by 1.2".

NASA is planning to fly a network of six sensors

on an upcoming Space Shuttle mission STS-95 as part

of HDT-1 in November 1998 (Figure 10). The mission

will evaluate new technologies to improve vehicle

health monitoring. The "Smart" module to fly on this

mission adds the functionality of an on-board microcontroller to provide all sensor control, conversion of

data to engineering units, storage of calibration data,

built-in-test functions, and communications.

The technology for this "Smart Sensor" for the

STS-95 mission is significantly improved over previous

designs. These improvements include a significant

reduction in system integration with, for example, no

centralized control system and a reduction in cabling

requirements. The "Smart Sensor" performs all required sensor element control functions and provides a

high level digital interface to the vehicle data system.

These "Smart Sensor" modules requires only a four

wire connection (two for power and two for RS-485

communications) and can be easily integrated existing

avionics systems.

For the X-33 program, a 20 sensor system is being

developed for use on the purge vent doors. The sensors

are integrated with an electronics module which

provides signal conditioning electronics and an isolated

28 VDC DC/DC power conversion. The X-33 system

is currently in qualification testing including EMI,

vibration, and thermal cycle testing. The X-33 is scheduled for flight testing in 1999.

Future work will include the further miniaturization of the electronics package and associated housing.

The use of ASIC (application specific integrated

circuits) technology is envisioned to decrease the size

and weight of the electronics while maintaining the

same capabilities.

COMMERCIAL APPLICATIONS

MEI is continuing this work with potential application of hydrogen sensors in a variety of industrial

environments. For example, use of a hydrogen sensor

to detect degradation of the health of transformers is

being explored. As electrical insulation in a transformer

Microcontroller Board

Signal

Board

Power

Board

N

_n_r

Figure 10. "Smart Sensor" Module developed by

MEI/CWRU/NASA is being tested on STS-95 as part of

HDT-1.

breaks down prior to its failure, hydrogen is released.

Monitoring of hydrogen in-situ in these transformerscan

provide early detection of transformer degradation and

avoid costly catastrophic failure of transformers in the

field. The PdAg sensors have already been applied to

automotive leak testing applications 6 and the complete

product has been internationally recognized with a

1995 R&D 100 Award. Other possible applications

include the monitoring of hydrogen releases from fuel

cells and industrial safety monitoring.

SUMMARY

Leak detection technology is being developed for

aerospace applications. This technology is based on

microfabrication and micromachining (MEMS-based)

technology and SiC semiconductor technology. The

NASA/TM--1998-208817 9
hydrogensensortechnology, usingbothPdCralloys,

hasbeenwelldevelopedandis beingappliedonthe

X-33andon the upcomingSpaceShuttleSTS-95

mission.Oxygensensortechnologyisalsobeingdevelopedto complement thehydrogensensortechnology.

Thismicromachined oxygensensorusesZrO2to amperometricallymeasurethe oxygenover a wide

concentration range.Hydrocarbonsensortechnologyto

detectleaksalternatefuelsarealsounderdevelopment

tomeettheneedsof futureaerospacepropulsionapplications.Thus,miniaturizedleakdetectiontechnologyis

alreadybeingappliedto improvethesafetyof aerospacepropulsionapplicationsandintegrationof this

technologyinfuturepropulsionsystemsisenvisioned.

REFERENCES

1. Hunter, Gary W.; "A Survey and Analysis of

Commercially Available Hydrogen Sensors", NASA

Technical Memorandum 105878, November 1992.

2. Hunter, Gary W.; "A Survey and Analysis of

Experimental Hydrogen Sensors", NASA Technical

Memorandum 106300, October 1992.

3. Lundstrom, I.; Armgarth, M.; and Petersson, L.;

"Physics with Catalytic Metal Gate Chemical Sensors,

CRC Critical Reviews in Solid State and Materials

Sciences", vol. 15, pp. 201-278, 1989.

4. Hughes, R.C.; Schubert, W.K.; Zipperian, T.E.;

Rodriguez, J.L.; and Plut, T.A.;"Thin Film Palladium

and Silver Alloys and Layers for Metal-InsulatorSemiconductor Sensors", J. Appl. Phys., Vol. 2,

pp. 1074-1038, 1987.

5. Hunter, G.W.; Lin, C.C.; Wu, Q.H.; and

Neudeck P.G.; "Advances in Hydrogen Sensor Technology for Aerospace Applications," Advanced Earthto-Orbit Propulsion Technology 1994, Huntsville, AL,

May 17-19, 1994, NASA Conference Publication 3282,

Vol. I, pp. 224-233, 1994.

6. Hunter, G.W.; Neudeck, P.G.; Chen, L.-Y.;

Liu, C.C.; and Wu, Q.H..; Makel, D.B.; and Jansa, E.;

"A Hydrogen Leak Detection System for Aerospace

and Commercial Applications," presented at

31 st IAA/ASME/SAE/ASEE Joint Propulsion

Conference and Exhibit, San Diego, CA,

July 10-12,1995 (American Institute of Aeronautics and

Astronautics, Washington, DC) Tech. Rep

AIAA-95-2645, 1995.

7. Barnes, H.L.; and Makel, D.B.; "Quantitative Leak

Detection Using Microelectronic Hydrogen Sensors"

presented at the 31st AIAA Joint Propulsion Conference,

San Diego, CA, AIAA Paper 95-2648, 1995.

8. Logothetis, E.M.; "Automotive Oxygen Sensors,"

Chemical Sensor Technology, Vol. 3, N. Yamazoe, ed.,

Kodansha Ltd., pp. 89-104, 1991.

9. Neudeck, P.G.; "Progress in Silicon Carbide

Semiconductor Electronics Technology", Journal of

Electronic Materials, vol. 24, pp. 283-288, 1995.

10. Baranzahi, A.; Spetz, A.L.; Glavmo, M.;

Nytomt, J.; and Lundstrom I.; "Fast Responding High

Temperature Sensors For Combustion Control", Proceedings, 8th International Conference on Solid-state

Sensors and Actuators, and Eurosensors IX,

Stockholm, Sweden, pp. 741-744, 1995.

ll. Chen, L.-Y.; Hunter, G.W.; Neudeck, P.G.;

Knight, D.; Liu, C.C.; and Wu, Q.H.; "SiC-Based Gas

Sensors", in Proceeding of the Third International Symposium on Ceramic Sensors, Anderson, H.U.; Liu, M.;

and Yamazoe, N., ed., Electrochemical Society Inc.,

pp. 92-105, 1996.

12. Hunter, G.W.; Neudeck, P.G.; Chen, L.-Y.;

Knight, D.; Liu, C.C.; and Wu, Q.H.; "Silicon

Carbide-Based Hydrogen and Hydrocarbon Gas

Detection" presented at the 31 st AIAA Joint

Propulsion Conference, San Diego, CA, AIAA

Paper 95-2647, 1995.

13. Hunter, G.W.; Neudeck, P.G.; Chen, L.-Y.;

Knight, D.; Liu, C.C.; and Wu, Q.H.; "SiC-Based

Schottky Diode Gas Sensors", Proceedings of International Conference on SiC and Related Materials, Stockholm, Sweden, Sep. 1-7, 1997.

14. Lei, J.F.; Plat. Met. Rev., 35, p. 65-72, 1991.

NASA/TM--1998-208817 10
Form Approved REPORT DOCUMENTATION PAGE

OMB No. 0704-0188

Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources,

gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this

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1. AGENCY USE ONLY (Leave blank) 2. REPORT DATE 3. REPORT TYPE AND DATES COVERED

November 1998 Technical Memorandum

4. TITLE AND SUBTITLE

A Hazardous Gas Detection System for Aerospace and Commercial Applications

6. AUTHOR(S)

G.W. Hunter, P.G. Neudeck, L.-Y. Chen, D.B. Makel, C.C. Liu,

Q.H. Wu, and D. Knight

7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES)

National Aeronautics and Space Administration

Lewis Research Center

Cleveland, Ohio 44135- 3191

9. SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES)

National Aeronautics and Space Administration

Washington, DC 20546- 0001

5. FUNDING NUMBERS

WU-254-02-0A-00

8. PERFORMING ORGANIZATION

REPORT NUMBER

E-11419

10. SPONSORING/MONITORING

AGENCY REPORT NUMBER

NASA TM--1998-208817

AIAA-98-3614

11. SUPPLEMENTARY NOTES

Prepared for the 34th Joint Propulsion Conference and Exhibit cosponsored by AIAA, ASME, SAE, and ASEE, Cleveland,

Ohio, July 12-15, 1998. G.W. Hunter, RG. Neudeck, and L.-Y. Chen, NASA Lewis Research Center; D.B. Makel, Makel

Engineering, Chico, California 95973; C.C. Liu and Q.H. Wu, Case Western Reserve University, Electronics Design

Center, Cleveland, Ohio 44106; D. Knight, Cortez III Service Corporation, Cleveland, Ohio 44135. Responsible person,

G.W. Hunter, organization code 5510, (216) 433_5459.

12a. DISTRIBUTION/AVAILABILITY STATEMENT

Unclassified - Unlimited

Subject Category: 35 Distribution: Nonstandard

This publication is available from the NASA Center for AeroSpace Information, (301) 6214)390.

12b. DISTRIBUTION CODE

13. ABSTRACT (Maximum 200 words)

The detection of explosive conditions in aerospace propulsion applications is important for safety and economic reasons.

Microfabricated hydrogen, oxygen, and hydrocarbon sensors as well as the accompanying hardware and software are being

developed for a range of aerospace safety applications. The development of these sensors is being done using MEMS (Micro

ElectroMechanical Systems) based technology and SiC-based semiconductor technology. The hardware and software allows

control and interrogation of each sensor head and reduces accompanying cabling through multiplexing. These systems are

being applied on the X-33 and on an upcoming STS-95 Shuttle mission. A number of commercial applications are also being

pursued. It is concluded that this MEMS-based technology has significant potential to reduce costs and increase safety in a

variety of aerospace applications.

14. SUBJECT TERMS

Gas; Leak; Hydrogen; Detection

17. SECURITY CLASSIFICATION

OF REPORT

Unclassified

NSN 7540-01-280-5500

15. NUMBER OF PAGES

16

16. PRICE CODE

A03

18. SECURITY CLASSIFICATION 19. SECURITY CLASSIFICATION 20. LIMITATION OF ABSTRACT

OF THIS PAGE OF ABSTRACT

Unclassified Unclassified

Standard Form 298 (Rev. 2-89)

Prescribed by ANSI Std. Z39-1B

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