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national Bureau of Standards Reference bOOR HOt tn h^

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^ecknlccil vZote 260

RESEARCH ON CRYSTAL GROWTH

AND CHARACTERIZATION AT THE

NATIONAL BUREAU OF STANDARDS

JULY TO DECEMBER 1964

U. S. DEPARTMENT OF COMMERCE

NATIONAL BUREAU OF STANDARDS

lb
THE NATIONAL BUREAU OF STANDARDS

The National Bureau of Standards is a principal focal point in the Federal Government for assuring

maximum application of the physical and engineering sciences to the advancement of technology in industry and commerce. Its responsibilities include development and maintenance of the national stand- ards of measurement, and the provisions of means for making measurements consistent with those standards; determination of physical constants and properties of materials; development of methods

for testing materials, mechanisms, and structures, and making such tests as may be necessary, particularly for government agencies; cooperation in the establishment of standard practices for incorporation in codes and specifications; advisory service to government agencies on scientific and technical problems; invention and development of devices to serve special needs of the Government; assistance

to industry, business, and consumers in the development and acceptance of commercial standards and

simplified trade practice recommendations; administration of programs in cooperation with United

States business groups and standards organizations for the development of international standards of

practice; and maintenance of a clearinghouse for the collection and dissemination of scientific, technical, and engineering information. The scope of the Bureau's activities is suggested in the following

listing of its four Institutes and their organizational units. Institute for Basic Standards. Electricity. Metrology. Heat. Radiation Physics. Mechanics. Applied Mathematics. Atomic Physics. Physical Chemistry. Laboratory Astrophysics.* Radio Standards Laboratory: Radio Standards Physics; Radio Standards Elngineering.** Office of Standard Ref- erence Data. Institute for Materials Research. Analytical Chemistry. Polymers. Metallurgy. Inorganic Materials. Reactor Radiations. Cryogenics.** Office of Standard Reference Materials. Central Radio Propagation Laboratory.** Ionosphere Research and Propagation. Troposphere

and Space Telecommunications. Radio Systems. Upper Atmosphere and Space Physics.

Institute for Applied Technology. Textiles and Apparel Technology Center. Building Research.

Industrial Equipment. Information Technology. Performance Test Development. Instrumentation.

Transport Systems. Office of Technical Services. Office of Weights and Measures. Office of Engineering Standards. Office of Industrial Services.

• NBS Croup, Joint Institute for Laboratory Astrophysics at the University of G>lorado. ** Located at Boulder, Colorado.
NATIONAL BUREAU OF STANDARDS

Technical Note 260

ISSUED MAY 8, 1965

RESEARCH ON CRYSTAL GROWTH

AND CHARACTERIZATION AT THE

NATIONAL BUREAU OF STANDARDS

JULY TO DECEMBER 1964

Edited by Howard F. McMurdie

National Bureau of Standards

NBS Technical Notes are designed to supplement the Bureau's regular publications program. They provide a means for making available scientific data that are of transient or limited interest. Technical Notes may be

listed or referred to in the open literature.

For sale by the Superintendent of Documents, Government Printing Office

Washington, D.C., 20402 - Price 50 cents
National Bureau of Standards JIOV 1 4 1868 151G72

cpcidd

US 753

Re-f,

Contents

Abstract 1

1. Introduction 1

2. Crystal Growth 3

2.1 Growth of Dislocation-Free Metal Crystals from the Melt 3

2.2 Kinetics of Growth of Crystals from the Melt 3

2.3 Theory of Dendritic Crystallization 5 2.^ Crystal Growth Studies hy Electron Field Emission Techniques 5 2.5 Field-Emission Microscopy of Crystal Growth Processes 7 2.6 Electrodeposition of Single Crystals 7 2.7 Theoretical Studies in Crystal-Whisker Growth 8

2.8 The Effect of Li^t on the Oxidation of Copper Single Crystal

Surfaces in Water 8

2.9 Crystal Growth of Refractory Phases from Solvents 10

2.10 Kinetics of Crystal Growth from Solution 11

2.11 Crystal Growth and Thermal Etching of Argon 12

2.12 Crystal Growth in Silica-Gel Medium 12

2.13 High Temperature Crystal Growth 13

2.1^ Crystal Growth from Solution 13

2.15 Transitions in Vapor-Deposited Alumina 14

2.16 Crystal Growth from the Melt of Suhstances with a Low Melting Point — 16

2.1? Crystal Growth and Structure Studies 16

2. IS Melting Temperature of Copolymers 17

2.19 Non-planar Solution Grown Crystals of Poly (4-raethylpentene-l) 17

2.20 Isothermal Thickening of Polyethylene Crystals 18

2.21 Single Crystals of n-Paraffins 21

2.22 Fractionation in Polymer Crystallization 21

2.23 Homogeneous Nucleation Studies 22

2.24 Radio Materials Synthesis 22

2.25 Hydrofluorothermal Growth of Crystalline BeFg under HF Pressure 23

3. Defect Characterization 23

3.1 Optical Properties of "Pure" and Impure Crystals 23

3.2 Irradiation Studies 26

3.3 Stacking Fault Energy in Silver-Tin Alloys 26

3.4 Stacking Fault Prohahilities in Metals 28

3.5 Extrinsic Stacking Faults in Silver-Tin Alloys 32

3.6 Thermodynamics of Segregation of Solute Atoms to Stacking Faults in

Binary Alloys 32

3.7 Oxidation of Iron at Low Pressures 34

3.8 Defects in Thin Oxide Films 34

ii
3.9 Ordering in Ag^Sn 34

3.10 Copper Surface Self-Diffusion 36

3.11 Theory of Point Defects in Crystals 36

3.12 Nuclear i4agnetic Resonance 37

3.13 Influence of Stacking Faults on Plastic Deformation at High

Temperatures 38

3.14 Effect of Fast Neutron Irradiation on Plastic Deformation of the B.C.C.

Refractory Metals 39

3.15 Characterization of Electrodeposited Crystals 39

3.16 Application of the Kossel Technique to Cuhic Materials 40

3.17 Study of Crystal Defects 42

3.18 High Voltage Laue X-Ray Photography 42

3.19 Diffraction Topography 44

3.20 Effect of Point Defects on the Dynamic Properties of Crystals 44

3.21 Formation Energies of Point Defects in CaFg 45

3.22 Laser Prohe for Micro-analysis 45

3.23 Diffusion in Solids : 47

3.2^ Evidence for Inclusion of Perfluoromethyl Groups in the Lattice of. Copolymers of Tetrafluoroethylene and Hexafluoropropylene 47

3.25 Magnetic Resonance Studies 43

3.26 Magnetic Resonance Studies 49

3.27 Use of Single Crystals of Disodium Pentacyanonitrosoferrate Dihydrate

(Sodium Nitroprusside) as a Standard Reference Material for Mosshauer

Spectroscopy 50

. Physical Properties of Crystalline I'4aterial 50

^.1 Crystal Orientation Methods 50

^.2 Crystal Symmetry and Crystal Properties 53

4.3 Studies in Solid-State Theory 53

4.4 Seeheck Effect and Thermal Conductivity of Semiconductors 53

4.5 Photoconductivity of Semiconductors 54

4.6 Research on Superconducting Semi-conductors 54

4.7 Resistivity and Hall Effect of Semiconductors ^^ 4.8 Optical Constants of Iron Single Crystal Surfaces in the Visible

Regi on 56

4.9 Enthalpy Measurements to 28OOOK 56

4.10 Soft X-Ray Spectroscopy 56

4.11 Optical Constants of Materials from 1 to 1000 Rydhergs 58

4.12 Silicon Density and the Scale of X-Ray Wavelengths ^B

4.13 Hall-Effect Measurements 59

4.14 Reference Data on Single-Crystal Elastic Constants 60

4.15 Deformation on Fracture of Ionic Crystals 60

4.16 Velocity of Sound in Ice Single Crystals 61

4.17 Accurate Measurement of the Fundamental Electrical Properties of

Semiconductor Crystals 63

4.18 Dielectric and Mechanical Properties of Crystals 64

4.19 Metal-Oxide Melting Point Standards 65

4.20 Experimental Determination of Atomic Scattering Factors 65

4.21 Visco-Elastic Properties 66

4.22 Electron Spin Resonance of Transition Metal Complexes 66

4.23 Mosshauer Line Broadening in SnOg Due to Twinning Effects 67

iii
5. Crystal Chemistry 68

5.1 Automation of Single-Crystal X-Ray Diffraction Intensity Measurements 68

5.2 Radial Distribution Studies of Glasses 68

5.3 Infrared Studies of Inorganic Materials 69

SA X-Ray Diffraction Studies at High Pressures 69

^»^ Phase Equilibria Determination with the Aid of Crystal Structure

Analys i s 69

^,6 Standard X-Ray Diffraction Powder Patterns 70

5.7 Crystal Chemistry of Silver Iodide 70

5.8 Crystal Structure Analysis 71

5.9 Phase Equilibria 71

5.10 Subliquidus Phase Separation in Inorganic Oxides 72

5.11 Ultrasonic Measurements at Pressure-Induced Polymorphic Phase Changes 72

5.12 Heats of Formation of Refractory Crystalline Substances from the

Elements 73

5.13 Microcomposition and Structure Characterization by Electronprobe

Methods

5.14 Crystal Structure of Phases in Nb-Sno System

5.15 Low-Temperature Calorimetry of Crystalline Substances

5.16 Apparatus for High-Temperature Preparation of Pure Crystalline

Polymorphs 75

6. Partial List of Participants 80

7. Literature References 89

iv
RESEARCH ON CRYSTAL GROWTH AND CHARACTERIZATION

AT THE NATIONAL BUREAU OF STANDARDS

JULY THROUGH DECEMBER I964

Edited by

H. F. McMurdie

ABSTRACT

The National Bureau of Standards vrith partial support from the Advanced Research

Projects Agency of the Department of Defense is continuing a wide program of studies

involving crystalline materials. These include investigation of methods and theoiy of

growth, study of detection and effects of defects, determination of physical properties,

refinement of chemical analysis, and determination of stability relations and atomic

structure. The types of materials range from organic compounds, through metals, and

inorganic salts to refractory oxides. This Technical Note, the fifth in the series,

summarizes the progress of these various projects from July through December, I964,

and lists the related publications and participating scientists.

1. INTRODUCTION

The National Bureau of Standards continues a wide and active program in many

aspects of material research. This publication, the fifth in a series, indicates

current activity for the period July through December I964 in the area of crystallography, crystal growth, investigations on propejrties of crystals, and on methods of

study. The National Biireau of Standards has been encouraged by the Advanced Research

Projects Agency of the Department of Defense to extend the study of crystals, particularly in the field of crystal growth and has aided with financial support. This

Note describes briefly the current state of the many projects here in the general field

of crystal studies and no effort has been made to identify the specific projects

supported by ARPA. Only in the few instances in which financial support from other

agencies contributed to the program has an acknowledgement been given. These items

should be considered as progress reports, not in the natixre of finished studies. The

formal papers resulting from the work are listed in these pages.

To aid in integrating the crystal program here and to encourage cross linking

between participants in the program, a number of meetings, discussions and lectures

have been arranged. In many cases these report and discuss our ciirrent work, in other

scientists from outisde material science centers appear.

The program as a whole at the National Bureau of Standards is under the direction

of Dr. Harry C. Allen, Jr.
We -wish to acknowledge the editorial assistance of Mrs. Pat Small-wood of the

Inorganic Material Division and the help given by the assistant editors who have

represented the Bureau Divisions as follows:

Heat

Analytical Chemistry

Mechanics

Polymers

Metallurgy

Solid State Physics

Inorganic Materials

Physical Chemistry

Radio Standards Physics

J. F. Schooley

A. R. Glasgow, Jr.

R. S. Marvin

E. Passaglia

R. L. Parker

A. H. Kahn

F. A. Mauer

E. N. Farabaugh

D. E. Mann

J. L. Dalke

The four previous semiannual reports in this series were published as NBS Technical Notes 174, 197, 236, and 251.
2. CRYSTAL GROWTH

This chapter is concerned with

mechanisms and techniques of

crystal growth and dissolution.

2.1 Growth of Dislocation-Free Metal Crystals from the Melt

T. H. Orem

R. L. Parker

Crystallization of Metals Section

For "background, see WBS Technical Notes l?'^, Sect. 4.3; 197, 2.3; 236, 2.1;

and 251, 2=1.

Since our last report we have grown 12 aluminum crystals by the Czochralski

method. All were grown in new crucihles of special purity graphite, using Al

starting material of 99.9999^ initial purity. We have taken about 200 Lang topographs of eight crystals during the period.

Chemical analysis of the aluminum before melting in our conventional (~99»9/^)

purity graphite crucibles, and then after melting, showed that we had been picking

up considerable impurity from the graphite. It was enough to reduce 5-9' s and

better purity aluminum to around 3-9' s. We then acquired and used some ultra-high

purity graphite crucibles (about5-9's pure) and found that 5-9's and 6-9's

aluminum now did not pick up significant impurity. The cone of defects often seen

in earlier Lang topographs was no longer present.

Figure 1 shows a positive print of a Lang topograph of our specimen 134, which

is the best Al crystal we have yet grown. It is free of dislocation lines in the

region near the tip. In addition, fringes following the outline of the crystal are

seen in this region. They are called Pendello'sung fringes FKato and Lang

Acta Cryst. 12_, 787 (1959)1 and are an indication of extremely high crystal

perfection; they require the dynamical theory of diffraction for an interpretation.

So far as we are aware, there is no prior published evidence of any observations of

Pendellosung fringes in metal crystals. They have been observed in Si, quartz,

and LiF.

2.2 Kinetics of Growth of Crystals from the Melt

J. G. Early

R. L. Parker

Crystallization of Metals Section

The background of this project may be found in 1C3S technical Notes 174,

Section 4.4; 197, Section 2.4; 236, Section 2.2 and 251, Section 2.2.

A commercial zone-refining apparatus was purchased and installed. Several

preliminary attempts were made to zone refine tin in order to check the operation

of the zone refiner. Even though no attempt was made to insure optimum conditions

for purification, chemical analysis of the samples indicated that purification was occurring and that probably tin of sufficient purity for these experiments could be

prepared.

3
Figure 1. lang Topograph of the best Al crystal so far produced. 4
With the aid of Dr. S. R. Coriell, of the Crystallization of Metals Section,

considerable time has been spent reviewing the theoretical basis for this experiment

as outlined by Kramer and Tiller fJ. Chem. Phys. J2Z.» ^^^ (1962)"', and Kramer and

Tiller TWestinghouse Report 64-924-118-P4 (I964)]. Emphasis has been placed on correlation and interpretation of the type of data obtained from an experiment in

light of assumptions used to develop the theory. This work is currently underway.

Finally, preparations are almost complete for an experiment using purchased

tin of 99.9999^ purity.

2.3 Theory of Dendritic Crystallization

S. R. Coriell

R. L. Parker

Crystallization of Metals Section

The stability of the shape of a particle growing by diffusion (or heat flow)

in a supersaturated solution (or supercooled liquid) is being studied. We have

previously considered the case of the growth of perturbations on a cylinder (See NBS

Tech. Note 251, Section 2.3 and Coriell and Parker 19^5). It was found that when

the radius of the cylinder was larger than a certain radius, Re, the cylinder was

not stable with respect to certain infinitesimal perturbations of shape.

One of the assumptions in the previous treatment was that there was no diffusion

in the solid-liquid interface, i.e., the surface diffusion coefficient, Ds, was assumed equal to zero. Since surface diffusion will cause the transport of matter

from places of high curvature to places of low curvature, the effect of surface

diffusion will be to make the cylindrical shape more stable. The stability of

the cylinder and of the sphere with a non-vanishing surface diffusion coefficient

has been treated. Waen the quantity (Dg C/Dcq) is large, the critical radius Rq is

appreciably increased by surface diffusion. In the above ratio C is the concentration

of solute in the growing particle, Cq is the equilibrium concentration of solute at

the solid-liquid interface, and D is the diffusion coefficient for solute in the

solution. Estimates of this ratio have been made for typical experiments for growth

of crystals from supersaturated solution and for growth of crystals from the vapor

phase in the presence of an inert gas. It appears that the ratio can be very large

for the case of solid-vapor growth and can increase the critical radius Rq by one or two orders of magnitude.

2.4 Crystal Growth Studies by Electron Field Emission Techniques

S. C. Hardy

R. L. Parker

Crystallization of Metals Section

The heterogeneous nucleation of Hg on W is being studied in an electron field

emission microscope (see NBS Technical Note 251» Section 2.4).

The time required to form nuclei has been measured over a narrow range of

vapor pressures as a function of emitter temperature. Figure 2 shows a number of

nucleation time versus substrate temperature curves, each curve being taken at

constant vapor pressure. The pressures given on the figure are relative values.

The sharp breaks in the curves are interpreted as critical supersaturations below

which nuclei will not form. The observation of such critical supersaturations is

in agreement with nucleation theory.
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2.5 Field-Emission Microscopy of Crystal Growth Processes

A. J. Helmed

Corrosion Section

The method of preparing clean single-crystal field emitters "by epitaxial

growth on tungsten field emitters offers some real advantages over other techniques

for studying metals which are normally difficult or impossible to study by field-,

emission microscopy. Therefore attempts were made to use this method for preparing

clean iron surfaces for subsequent oxidation studies. Moreover these attempts were

successful, but some questions still remain to be answered.

The field-electron emission microscopes used for this work were essentially

conventional tubes with the addition of an iron vapor source. The nucleation and

growth processes proved to be extremely sensitive to small amounts of impurities;

the use of impure starting material or inadequate outgassing of the finally assembled

source caused excessive multiple nucleation and hi^ly defective crystalline growths.

Therefore, floating zone refined iron of the highest available purity was used and

source assemblies were thoroughly degassed. Ambient pressures in the tube were usually < 5 X 10-10 torr.

Experiments were done over the temperature range ~ 350 C - 1000 C. The iron

crystals nucleated at the edge of tungsten [Oil] planes, grew out into the rill]

regions, and then extended over the rest of the tungsten field-emitter surface and

thickened. The iron crystal plane nucleated was an fOOl"! plane and the crystal

grew superposed on the tungsten substrate with like planes parallel to each other.

Large crystals could be grown, but the useful temperatxires for producing high purity

iron crystals seem to be limited to a smaller range due to diffusion of tungsten

from the substrate into the growing crystal. It was calculated that in order tg

have essentially no tungsten diffusion the growth temperature must be about ^20 C or lower, if growth times of about 5 minutes are used. For shorter growth times

higher temperatures may be used. Crystals were grown over the temperature range

350'c - 750 C. Field-ion microscope experiments are planned to examine the actual

impurity content of the crystals, but until these experiments are done, the crystals

grown at lower temperatures will be used for further work, i.e., oxidation studies.

2.6 Electrodeposition of Single Crystals

J, P. Young

F, Ogburn

Electrolysis and Metal Deposition Section

Silver was electrodeposited from solutions of silver ammonium nitrate under a variety of conditions. Depending primarily on the solution concentration we were

able to get crystals ^nd dendrites in several different forms. These included

approximately equiaxed crystals several millimeters across and with many well defined

facets, dendrites several millimeters' wide and one to two centimeters long, extremely

thin platelets covering an area of 10 to 100 square millimeters, and whiskers or needles centimeters long and a fraction of a millimeter in diameter. We have

examined the structure of only the one dendrite and that only partially. It gives

an x-ray diffraction pattern of a well formed single crystal and its facets are of

high index planes. Our plans are to examine the structure of a number of these

growths.
2.7 Theoretical Studies in Crystal-Whisker Growth

J. A. Simmons

R. E. Howard

Metal Physics Section

R. L. Parker

Crystallization of Metals Section

and

H. Oser

Applied Mathematics Division

The o'bject of this work is to obtain accurate solutions of the equations

describing the rate of growth of metal whiskers from the vapor and the rate of

build-up of the concentrations of adsorbed atoms on the sides of growing whiskers.

These equations and methods for determining their solution were described in IIBS Technical Notes 236, Section 2.2 and 251, Section 2.20.

The computer program described in NBS Technical Note 251 was found to be stable

and growth curves were computed for small times, t ^ 1 sec. Due to excessive

computing times the program was rewritten to thin out the integration mesh as the

whisker grows, thereby cutting the computation time by a factor of 10. Other difficulties associated with restarting the integration procedure of Subroutine 1 after

computing the concentration profile by Subroutine 2 have yet to be resolved althou^

considerable progress has been achieved.

2.8 The Effect of Light on the Oxidation of Copper

Single Crystal Surfaces in Water

Jerome Kruger

Joan P. Calvert

Corrosion Section

Studies of the effect of illumination on the growth of oxide films on copper

single crystal surfaces immersed in water containing different amounts of dissolved

oxygen reveal that, while illumination has little effect on the oxidation progess

when the water is in equilibrium with a lOQ^ oxygen atmosphere it does lower the rate

of film formation when the water is in equilibrium with 1% oxygen. For both the (111)

and (100) planes white light causes a departure from the rate law observed for

oxidation in the dark. At intensities of 29O uw/cm2 or higher the film formed on the

(111) plane never grows beyond a limiting thickness of 100 A, (Figure 3)* The behavior

observed can be explained on the basis of a competition between growth and dissolution

reactions, the dissolution reaction being promoted by illumination. A paper on this

work has been published (Kruger and Calvert I964).
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TIME, MINUTES

Figure 3 • Cubic plot showing the effect of illumination of different intensities on

the growth of oxide films on copper single crystals immersed in water in equilibrium

with 99^ He Vfo O2 gas mixture, (a) (100 ) Surface, (b) (ill) surface.
2.9 Crystal Growth of Refractory Phases from Solvents

H. S. Parker

Crystal Chemistry Section

The purpose of this investigation is to develop and evaluate methods of growth

of highly perfect crystals at temperatures helow the melting point of the crystal.

The preliminary work has heen described in IffiS Technical Note 251f Section 2.11.

Briefly, the techniques r originally proposed by Pfann, Trans. AIRE 203« 961-4

(1955), see also: Tiller, J. Appl. Phys. 3^, 2757-62 (I963); Mlavsky and Weinstein,

J. Appl. Phys. 2!b 2885-92 (I963) and J. Appl. Phys. 35. 1892-4 (1964); Griffiths and

Mlavsky, J. Electrochem. Soc. Ill, 805-10 (1964)^ currently under investi^tion

involves the movement of a thin (0.1 to 1.0 mm) solvent zone in a "sandwish" composed

of the seed crystal, the solvent zone, and the polycrystalline source material.

Movement of the solvent zone results when the assemblage is placed in a suitable

temperature gradient such that solution is occurring at the hotter solvent-solute

interface and epitaxial growth is occurring at the cooler interface. Thus this

method differs from the usual zone melting technique in which operating temperatures

are generally at or above the melting point of the crystal involved and zone movement

results from relative motion of the cyrstal and heat source.

One of the major problems associated with the successful use of the traveling

solution zone technique is the selection of a suitable solvent for the desired crystal

growth. Among the important properties of the solvent area low melting point or formation of a low-melting eutecic with the desired crystal, sufficient solubility of

the crystal in the solvent (this solubility need not be high, since there is

essentially an infinite amount of source material compared to the dimensions of the

zone and the amount of solvent present), a liquidus slope (^C/'T) such that attainable

temperature gradients will result in formation of a stable and steadily moving zone and consequent supersaturation at the cooler interface, lack of solid solubility with

the crystal of interest, and low vapor pressure. In addition, the diffusion rates of

the solute species should be high in the solution zone.

As reported in rIBS Technical Note 25I, Section 2.11, ZnO has been chosen as the

initial experimental material and minor amounts of growth have been obtained using

PbMoOi^ as a solvent. Other possible solvents have been investigated but no evidence

of growth has been obtained. The major drawback to the use of PbMoOj;,, is its relativelj

high vapor pressure at the necessary operating temperatures which, in a typical growth

run, range from 1050° - 1500OC.

The investigation of other fused salts as possible solvents has been continued.

At the present time, the Ba0-B20'5 system appears to have promise. By the prograntied

cooling from I350OC of mixtures containing approximately 44 percent by weight ZnO,

12 percent B20-^ and 44 percent BaO, it has been possible to crystallize ZnO over a limited portion of the temperature range. Compositions in the ternary system

Zn0-Ba0-B20o are being investigated to establish the compositional region wherein

ZnO is the primary phase, and to determine the approximate shape of the liquidus

surface in this region in order that suitable compositions and operating temperatures

be selected for growth experiments.

10
Results olstained so far indicate the presence of a ternary eutectic or peritecic

aelting at less than 8OOOC and containing "between 10 and 15 percent hy v/eight of ZnO,

dth the remainder composed of BaO and B20-^ in the weight ratio 3.5VI. This

JaO/BgOo ratio corresponds to the eutectic melting at 905°C in the "binary system

}aO-B20^ (Phase Diagrams for Ceramists, p. 97> the American Ceramic Society, Inc.,

;olum"bus, Ohio I964). As ZnO is added, keeping the ratio of BaO/BpOo constant at

3.5Vl» the liquidus increases to a temperature of approximately li75°C in compositions

containing 25 percent "by weight of ZnO. The compositional region "between 25 and 50

)ercent by weight ZnO is currently "being investigated. Since it has already "been

;sta"blished that ZnO will crystallize at temperatures "below I3500C in this compositional range, it appears that this system holds considera"ble promise "both from the

standpoint of vapor pressure of the solvent and operating temperatures low enough

:o minimize pro"bleras associated with the volatility of ZnO. Due to the apparent high

5olu"bility of ZnO in this solvent, preliminary growth experiments using this 3.5VI

5aO/B203 eutectic mixture as the solvent have not "been successful. In order for the

solvent zone to reach a saturated condition, such large quantities of ZnO must "be lissolved as to prevent the formation of a narrow zone, even when the over all

temperature gradient in the system is of the order of 4oooc/cm. In future experiments

le will attempt to use a solvent composition initially containing ZnO in an amount

?hich is nearly enough to produce saturation at the operating temperature.

2.10 Kinetics of Crystal Growth from Solution

J. L. Torgesen

R. W. Jackson

Crystal Growth Section

The experimental technique of Al"bon and Dunning fActa. Cryst. 12, 219 (1959)1

las "been used to o"bserve microscopically the growth layer morphology and growth

nineties of ammonium dihydrogen phosphate as its crystals grow from aqueous solution

!see KBS Technical lote 251, Section 2.12). Small crystals of AD? have been grown

)y feeding with supersaturated solution in a special cell, mounted and temperaturejontrolled on the rotating stage of a microscope. With reflected light and at a magnification of 50X the surface features of the [lOO] and [101] faces were examined.

Growth on the [100] face of ADP crystals proceeds by a screw dislocation

leclianism. The growth spirals are roughly elliptical in shape and oriented with the

short axis of the ellipse parallel to the [001] axis of the crystal. Nei^boring

screw dislocations of opposite hand (Frank-Read source) are most frequently observed.

?he step velocity is of the order of 10-3 cm/min.

Growth on the [101] face proceeds by the movement of layers from the edges towards

:he center of the face, with the step height from all edges often of the same order of

lagnitude within the a"bility to observe. The stepped pit onto which the layers

converge is often annihilated, leaving momentarily a face without observable steps,

in accordance with the observations and conclusions of Bunn and Emmett Tdisc. Faraday

)0c. No. 5, 119 (19^9)] it is believed that these layers have their origin in the

spiral growth on the [lOO] face. It is conceivable that the layers distribute themselves along the edges of the [101] face and then proceed to build up layers on that

race. A similarj_ even more striking example of this growth step morphology has been

)bserved in [1011] faces of sodium nitrate.

11
V/hen chromic ion impurity is added to the ADP solution, the growth spirals on

[lOO] assume an almost rectangular shape, again with the "short dimension of the

rectangle parallel with the '"0011 axis of the crystal. This suggests that the

hahit modification caused by the chromic ion ^J. Jaffe and B.R.F. Kjellgren, Disc.

Faraday Soc. No. 5, 319 (19^9)1 proceeds by selective adsorption along the one- dimensional growth fronts rather than by adsorption on certain crystal planes, and

further, that the changes in crystal habit are secondary to the changes in the

morphology of the growth spirals.

2.11 Crystal Growth and Thermal Etching of Argon

G. L. Pollack

E. N. Farabaugh

Crystal Chemistry Section

This work was described in MS Technical Note 197, Section 2.13.

A paper of the above title describing the experiments and the result has been

accepted for publication (Pollack and Farabaugh 19^5)

.

2.12 Crystal Growth in Silica-Gel Medium

J. L. Torgesen

A. J. Sober

Crystal Chemistry Section

Salts which are sparingly soluble in water can be grown in single crystal form

in silica-gel medium THolmes, J. Franklin Inst., 184, ?43 (1917) '! by the slow interdiffusion of the component ions (see Technical Notes 197, Section 2.5, 236, Section

2.8, and 251, Section 2.13). Most applicable to materials having solubilities of the

order of 0.01 to 0.1 percent, the method has been used to produce single crystals of a variety of materials up to several millimeters in size. These include copper tartrate,

calcium tartrate, lead mono- and di-iodide, calcium sulfate dihydrate, and mercuric

iodide.

Oxidation-reduction reactions which produce sli^tly soluble products may be

conducted in the silica-gel medium to give single crystals of acceptable size.

Cuprous chloride crystals, as optically clear, well-developed tetrahedra up to 3 mm

on edge, have been grown by the inderdiffusion of cupric chloride and hydroxylamine

hydrochloride.

Recent studies have explored ways and means to inhibit excessive nucleation which

leads to large numbers of small crystals. It has been found that ultra-filtration

(filter pore sizes down to 0.1 micron) of the component solutions does not significantly effect the number of nuclei and crystals which form. More effective in

reducing nucleation has been the interposition of a "neutral" gel zone (containing

initially no reacting ions) between the ion-source regions of the system. In some

cases, e.g. copper tartrate, the number of nuclei decreases by two to three orders of

magnitude to give three or four crystals per cc of gel medium.

12
As crystals grow to apprecia^ble size (" 2 cm), it is evident that the gel is

split near the crystal corners and edges. The crystals are ohviously growing under

stress. In addition, the supply of nutrient material is enhanced in these localized

regions of crystal surface, resulting in irregular growth. Arrangements are presently

"being studied whereby these limitations of the method can he eliminated.

2.13 High Temperature Crystal Growth

W. S. Brower

Crystal Chemistry Section

The use of direct electromagnetic heating, using high frequency RF power, for

floating zone crystallization (see IIBS Technical Note 251* Section 2.6) has heen

continued. A chamher has been constructed for the floating zone apparatus which will

permit the control of atmosphere for floating zone crystallization of NiO and MnFegON.

Large single crystals of Cr203 (0.75 cm.dia. x 8 cm) have heen grown hy the

verneuil technique and etching techniques have been developed for revealing

dislocation arrays on the (1011) cleavage surfaces and on (0001) surfaces prepared by

mechanical polishing (Brower and Farabaugh, I964).

2.W Crystal Growth from Solution

J. L. Torgesen

A. T. Horton

Crystal Chemistry Section

Large single-crystal specimens of ammonium dihydrogen phosphate and sodium

chlorate continue to be produced by growth from solution using temperature-program

techniques (see HBS Technical Notes 174, Section 4.5, 197, Section 2.5, 236,

Section 2.8, and 251, Section 2.7). Only limited success has been realized in the

growth of large single crystals of potassium acid phthalate (KAP). Excessive growth

of crystallites in the solution surface, particularly in regions of contact with the

grwth jar, heaters, thermometer, etc., contribute to volunteer growth which impedes

the growth of the single crystals. Measurements to reduce this interference, a new dome-shaped lid by which condensing solvent is directed to wash more effectively the

sides of the growth jar and using polyethylene sleeves on the upper sections of the

heaters and thermometers, have been worthwhile.

Characterization of ADP crystals (see also Section 3»19) by x-ray diffraction

topography and etch pit techniques has been continued with the latter corroborating

the results which have been obtained on crystal perfection by x-ray methods. The

two characterization methods have been shown to be in approximate one-to-one corres- pondence in the identification of dislocations in crystal sections prepared by

sawing with abrasive wheels. The absence of both etch pits and topographic images in

sections carefully prepared by string-sawing and solution polishing is taken to indicate that the material, as grown from aqueous solution, is dislocation-free. A

preliminary report on characterization studies on ADP was orally presented in August,

1964 (Deslattes, et al, 1964).

13
Preliminary olsservations of the slip systems in ADP indicate a dominant slip

along the equivalent pair of tetragonal axes and a minor, thou^ significant slip

along the unique tetragonal axis.

Attempts are presently in progress to produce large single crystal specimens of

disodium pentacyanonitrcsyl ferrate dihydrate. The material is to be used as a standard in the measurement of Mbsslsauer chemical isotope shift.

Work on the growth of oxalic acid single crystals from solution in glacial

acetic acid and in acetone-water mixtures has been concluded. The details of this

investigation are reported in a paper recently published (Torgesen and Strassburger,

1964).

2.15 Transitions in Vapor-Deposited Alumina

J. J. Diamond

A. L. Dragoo

High Temperature Chemistry Section

A transport film was formed on the interior of a pyrex flask when the end of an

enclosed alumina rod was melted in vacuum (5 x 10-° mm of Kg) with an arc image

furnace. Infrared adsorption by the film showed a water band at 2.9t) and several

adsorption fringes because the film v/as the same order of thickness as the wavelength

of the incident radiation. The material lost about 4/^ in weight when ignited to 1200°C. The film did not give any pattern when subjected to either x-ray or electron

diffraction analysis. The film thus is a slightly hygroscopic alumina and is

"amorphous" to the limits of detectability (grain size < ~500A).

The transition of the film to "-alumina was studied as a function of time and

temperature. Representative d-spacings and intensities are illustrated in Fig. i for

x-ray diffractometer results from^^ annealed samples of the powdered film. A diffraction line corresponding to d=1.39A (the strongest line of most transition aluminas)

appeared after annealing the film in air for one-half hour at 570°C. All lines

obtained from samples annealed at 5700C (maximum time, I6 hours) were very weak, and

the certainty of these lines was determined by their presence in more than one pattern.

A transition form (Fig. 4b), approximating a mixture of 6- and G-aluminas identified

by Stumpf fJ. W. Ilewsome, H. VJ. Heiser, A. S. Russell and II. C. Stumpf, Aluminum

Company of America, Alcoa Research Laboratories, Tech. Paper No. 10 (revised, i960),

p. 12] was presented after 32 hours at 6700C and for all heating times and ter^peratures

investigated up to I6 hours at 870OC. Anneals at 870°C for 32 hours (Fig. ^.c) and

9200c for 16 hours resulted in the abrupt appearance of '^-alumina lines along with

those of the transition form. Disappearance of the transition form was very nearly

completed by 1070°C (16-1/2 hours), leaving ^-alumina pattern as illustrated in

Figure 4e.

The influence of the substrate on the formation of the vapor-deposited film was

investigated by depositing the film both on a single-crystal sapphire disk and on a

glass microscope slide. The films were stripped from the substrates and examined by

electron microscopy and diffraction. The AI2O3 film, deposited on the sapphire disk

was polycrystalline, with a grain size of about 2200A, and showed one faint diffraction ring at d=1.25A (6- or 0-alumina); whereas the film deposited on the glass slide

showed no crystallinity (grain size was not determined). The film did not grow

epitaxially on the sapphire as evidenced by the small grain size. Althou^. the

crystallinity of the substrate appears to have induced some crystallization of the

Ik
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15
film, the single faint ring of the transition form suggests that the impinging vapor

species, primarily Al and [J. Drowart, G. Delferia, R. P. Burns and M. G. Ingjiram, J. Chem. Phys.

^

13^6 (I966)], cool too rapidly to form the ordered a_alumina

structure.

2.16 Crystal Growth from the Melt of Suhstances

With a Low Melting Point

A. T. Ilorton

Crystal Chemistry Section

and

A. R. Glasgow

Analysis and Purification Section

Glass apparatus is used for the purification and growth of crystals with melting

points up to about 130°C by a modified Bridgmai technique. The temperatures of the

melt and the solid are maintained "by two immiscible liquids at whose interface a sharp temperature drop exists. A sealed pyrex tube containing the specimen is slowly

lowered through the interface. The specimen is maintained under its own vapor

pressure in contact only with the glass container. Provision is made for the removal

of the last portions of the specimen to solidify in several successive recrystallizations.

The equipment has been found effective for the purification of trans-stilbene,

dimethyl oxalate, benzoid acid and benzene. It could also be used for careful studies

of thermal and radiation stability of pure substances.

2.17 Crystal Growth and Structure Studies

D. E. Roberts

Solid State Physics Section

Single crystals of MgFg have been pulled from the melt. The greatest difficulty

has been the reaction of the charges with oxygen or water vapor. This liberates HF,

which is destructive to the crystal puller, and MgO, which is soluble in the melt.

The problem may be solved by construction of a system resistant to KF and operation in an HF atmosphere. Boules of good quality have been prepared in an existing apparatus

by following a few precaustions:

1. The use of hi^ purity MgFg as starting material.

2. Maintenance of a dry, oxygen-free atmosphere in the crystal puller.

3. Limitation of boule size to about 1/2" diameter and pulling speed to under

l/V per hours.

Molybdenum oxide has been prepared from both the liquid and vapor phases.

Crystals grown from the melt show many striations and are of little value. Vapor

grown crystals form thin plates large enou^ for useful samples. At least nine

phases of oxide are known to exist. Except for MoOo and possibly M0O2, it is difficult

16
to isolate a specific oxide. The present effort is in the preparation of samples of a single phase.

P'bClg has been prepared from the melt. Crystals grow readily "but fracture "badly on cooling. Annealing does not prevent fractures. Growth from the vapor phase and

from solution are "being tried.

Single crystals of rutile (TiOg) are "being grown "by the flame fusion method.

SrTiO^ has also "been grown "but "boules are not single crystals.

2.18 Melting Temperature of Copolymers

J. P. Colson and R. K. Ehy

Polymer Physics Section

Samples of a copolymer series have "been crystallized with different lamella

thicknesses as measured by small angle x-ray diffraction. Rapid heating on a microscope hot stage has been used to measure the melting temperature of the samples which

have independently varied comonomer concentration and lamella thickness. Analysis of

the initial results shows that variation of the melting temperature with these

variables can be fitted to an equation derived with a model of inclusion of the comonomer units in the lattice as defects. This work has been reported in two papers

(Eby 1963 and Eby I964). The constants of fitting, which are related to the equilibrium melting temperature, the fold surface energy and the energy of the lattice

defects, yield suitable values with these intial results.

2.19 Non-planar Solution Grown Crystals of Poly (^-methylpentene-1)

F. Khoury

J. D. Barnes

Polymer Physics Section

An optical and electron microscopic study has been made of the habits and

morphology of chain folded crystals of poly (4-methylpentene-l) (P^MPl) precipitated

from diluted solutions of the polymer in mixed solvents (5Q^o xylene: 50?^amyl acetate)

at temperatures in the range 50°C-90OC. The outcome of this investigation has been

to establish the existence of P^lCPl crystals which exhibit, to varying degrees

distinctly curved growth habits.

It has been previously established TF. C. Frank et al. Phil. Mag. i, 200 (1959)^

[D. C. Bassett, Phil. Mag. 10, 595 (1964)1 that P-^MPl can be crystallized from

solution in the form of thin planar (or almost planar [D, C. Bassett, Phil. Mag. 10,

595 (1964)1) crystals consisting of a single or several superimposed square shaped

lamellae which are of the order of 100 A in thickness. It has also been established

[P. C. Prank et al, Phil. Mag. 4, 200 (1959) "^rc. C. Bassett, Phil. Mag. 10, 595 (19^4)^

that the chain molecules are regularly folded within the constituent lamellae of such

crystals and that the chain segments are oriented normal to the plane of lamellae.

Furthermore, the lamellae are bounded laterally by (100), (010) growth faces (P4MPl)has

tetragonal unit cell, a=b=18.66A c I3.8O A, containing four chains in a ?£ helical

conformation oriented with their axes parallel to the c-axis of the unit cell.).

17
Our present study has revealed that whereas crystals exhihiting the same habit

as the descrilDed ahove are formed at 900C (Fig. 5), at lower temperatures (800C,

70°C, 60°C, 50°C) multilayer crystals are formed which exhibit distinct departures

from the planar habit of the crystal shown in Fig. 4. It has been found that although

the crystals formed at these lower temperatures consist of chain folded lamellae

bounded laterally by (100), (010) growth faces, the crystals exhibit a distinctly

curved overall shape resulting essentially as a consequence of the prtsgressive curling

which occurs during growth at the crystal corners where (100) and (910) growth faces

meet. This latter feature has been found to become more pronounced the lower the

temperature of crystallization.

Examples are shown in Fig. 6 (a, b) of crystals grown at 70°C as seen in different

perspectives under the phase contrast microscope while still in suspension in liquid.

At that temperature the corners ofthe crystals have curled back through 180° or more

and are close to meeting one another the crystals have roughly the overall appearance

of a hollow bowl.

It should be pointed out that the curved crystals observed during the course of

the present study are not peculiar to the solvent system used. We have grown similar

curved crystals from solutions of the polymer in xylene alone. Indeed, the similarity

between certain types of curved crystals grown from xylene: amyl acetate as they appear

in the collapsed state (they collapse very readily on drying) under the electron

microscope, and some recently published electron micrographs of xylene grown crystals

PA. E. Woodward, Polymer ^, 293 (19^4)1 is striking. On the basis of our complementary

studies of the corresponding xylene: amyl acetate grown crystals while they were still

in suspension in solvent, it appears that the crystals described by Woodward possess

curved growth habits, and are not hollow pyramids with steep sides as has been

proposed.

2.20 Isothermal Thickening of Polyethylene Crystals

James J. Weeks

John D. Hoffman

Polymers Division

Low-angle x-ray studies have been carried out on polyethylene while it wis in the

act of crystallization at 128°C. The objective was to determine whether the crystal

lamellae thickened on storage. Studies were made on both llarlex 50, and a ffaction

of 240,000 molecular weight. MarJ.ex 50 thickened at an initial rate of I05 A/decade,

and the fraction thickened at '^'^ A/decade. The thickening process thus behaves in

its first stages as was predicted. Both specimens showed an abrupt falling off in the

rate at long times.

A note (Weeks and Hoffman, I965) has been submitted.

18
Figure 5. Crystals of Poly (4 methylpentene-l) grown at 90°C.

19
Figure 6a.

Figure 6b

Figure 6. (a & b) Crystals of Poly (4 methylpentene-l) grown at 70°C iinder phase

contrast microscope.

20
2.21 Single Crystals of n-Paraffins

John M. Crissman

Elio Passaglia

Polymer Physics Section

Several almost-single crystals of n-eicosane (C2oHj[j.2) several centimeters long

and OA cm in diameter have "been grown "by the Bridgeman technique. X-ray investigation indicates that the crystals grow with the long-axis of the molecules orienting

essentially normal to the "growth direction. The structure is triclinic, and some disorder exists. The exact nature of this is heing determined. Although the material

was zone refined it is felt that purification was not complete, and a sample of more rigorously zone-refined material is now available.

2.22 Fractionation in Polymer Crystallization

E. A, Differzio

J. I. Lauritzen, Jr.

E, Passaglia

Polymers Division

A theoretical treatment of the problem of fractionation in polymer crystals whose

formation is kinetically controlled has been developed. V/ith each of the various types

of fractionation problems one can associate a diagram on the basis of which the

general rate equations can be detived. These equations have not been solved in

general but the pure flux determined solution can be obtained by the techniques of

linear algebra. With certain restrictions on the rate constants, the equations may be

cast into the form of an eigenvalue problem: rA-B''P = >P where A is a matrix containing

the forward and B one containing the backward reaction rates at the growth front of

the crystal and P is a vector whose components, Pij, are the number of crystals with

species J_ in the last position and species _i in the next to last position. Sij

represents the number of chains per second which grow by adding species j_ to a crystal

with species ^ in the last position, and this is related to Pij by the equation

SIJ = XjP^j

which is a type of eigenvalue equation with >.j the eigenvalue. The consequences' of

this formalism are being investigated. It is found that the same formalism can be

used to solve the problem of fluctuations in step height and this problem is being

programmed for the 7094 computer. Equilibrium is the special case of the general

treatment.

21
2.23 Homogeneous Nucleation Studies

F. Gornick

G. S. Ross

L. J. Forlen

Polymers Division

During the current report period, the experimental techniques for studying the

homogeneous nucleation frequency in linear polyethylene have continued to he developed

and improved. It is now possible to prepare droplets of the hulk material in a size

range from two to five microns. Suitahle cells have heen developed for containing the

samples. Suspending materials and transferring techniques are now considered to he

adequate for these studies. Reducing the amount of heterogeneous nucleation which

occurs in any sample continues to he the most difficult prohlem hut considerahle

headway has heen made in this area.

Several isothermal studies have heen completed using cinephotomi orographic

techniques. Various techniques for analyzing the photographic resuttF^ve heen

examined and statistically evaluated to determine the most efficient and accurate

method for extracting meaningful data from each experiment. A machine technique

developed hy the Data Processing Systems Division for processing pictorial information

has heen used for one picture and appears to he a most promising technique.

Dr. George Moore of the Metallurgy Division has developed a program which may he used

for tahulating numhers of frozen droplets at any given time and temperature as well as their size and shape factors. This program is currently heing rewritten for 'PILOT*

and is expected to he in operation hy May. The use of this method is expected to reduce greatly the time required to analyze the photographic results as well as increase the reproductihility of the counts.

During the next reporting period the studies on the unfractionated samples of

polyethylene are expected to he completed. Investigations on other samples of this

polymer will also he started.

2.24 Radio Materials Synthesis

P. M. Gruzensky

Radio and Microwave Materials Section

As indicated in Technical Note 174, Section 4.21, the purpose of this project

is to synthesize ultra-pure or known composition materials which are not availahle

readily elsewhere, and which are of particular interest for fundamental investigations

of various solid state properties.

During this report period, efforts have heen concentrated on the growth of sodivun

chloride single crystals from pure aqueous solutions. Alkali halide crystals in

general are grown readily from a melt, however, optical and electrical properties are

so sensitive to trace impurities and slight imperfections, tliat reproducihle results

often difficult to ohtain (seefbr example, Butler, et al., J. Chem. Phys. ^, 242

(1963)). Essentially isothermal evaporation of chemically purified sodium chloride

solutions has yielded several single crystals, one with edge dimensions of 2.5 cm. Conductivity measurements hy a dc pulse technique indicate that the conductivity in

the extrinsic temperature region is two orders of magnitude lower than that of

commercially availahle melt grown crystals.

22
2.25 Hydrogluoro thermal Growth of Crystalline BeFg under HF Pressure

A. R. Glasgow, Jr.

Analysis and Purification Section

In the development of a "hydrofluorothermal" process for the growth of BePp

crystals in a platinum-lined steel homb under pressure of 30-50 atmospheres of HP,

anhydrous addition of HP to a closed "bomb is required. The technique for this

addition from a rupture-disc ampoule (Pig. 7) was perfected whereby gaseous HP was transferred from a cylinder to an evacuated manifold of Monel, degassed in a trap by

alternate freezing and melting under a vacuum, condensed in the ampoule and then

sealed (E, Pig. 6), weighed at room temperature, added to the bomb, and finally

released to the closed bomb by rupturing the platinum-disc (D, Pig. 7) by its increase

in internal pressure when the bomb was heated to 150°C,

3. STUDIES OF DEPECT CRYSTALS

This chapter is concerned with

studies of defect-sensitive

properties of single crystals.

3.1 Optical Properties of "Pure" and Impure Crystals

R. P. Blunt

Solid State Physics Section

Principal attention was devoted to continuing the investigation of irradiation

induced color centers in MgP2 (see report by M. I. Cohen, Section 3.2 of this report).

The work reported in Section 3.I, Technical Note 251, lias been extended to include the use of polarized light on oriented crystals. The initial strong band has EjlC and E|.c

components at 255 and 265 nm, respectively. As reported earlier, optical bleaching of

this band produces a strong hand at 370 nm with E^c. Additional weak bands at 3OO and

320 nm (with Ej_cj have now been observed along with the 379 nm band, as seen in Pig. 8.

Detailed bleaching experiments, in the course of which the 3OO nm band is permanently

removed, show that the 320 nm band arises from a center lying along a rnol direction.

The 260 and 370 nm bands are cylindrically symmetric about the c-axis. None of the

bands seem to have symmetry appropriate to an P-center, but the 320 nm could arise

from a hole trapped at the two adjacent anions lying along rnol directions forming

Vjj centers. The 260 nm band could be a cation vacancy, but the 300 and 370 nm bands

would remain unexplained.

This work has resulted in two papers: Blunt and Cohen, 196^a and Blunt and Cohen,

1964b.

23
(T^

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Vr

II /

A. Platinum tube l/8 inch O.D. .010

inch wall

Platinum-iridium body 90^ Ft and 10^

Ir alloy

Platinum-iridium ring 90% Pt and 10^

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D. Platinum disc, foil .001 inch thick

soldered to B and C

E. Position where tube is cut off after filling

with HF and closing tube with pliers

{

Figure 7. Rupture-Disc-Ampoule.

24
1.5

LO

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MgF2 SAMPLE SE2-I

[poU Direction

After X- irradiation

After 254 nm opticalbleach

i\

200 250 300 350 400

WAVELENGTH nm

Figure 8. The optical absorption spectra of an MgFp crystal (0.05 cm thick) just

after irradiation and. just after a subsequent 254 nm optical bleach.

25
3.2 Irradiation Studies

M. I. Cohen

Solid State Physics Section

Work on irradiation induced color centers in magnesium fluoride has continued.

The output of the tungsten- target , high-output X-ray source has "been measured hy means

of silver-activated phosphate glass dosimeters TSchulman, Klick, and Radin, Nucleonics

11, 30 (1955)] calihrated by V. H. Ritz of the Naval Research Laboratory. This

measurement indicates a dosage rate on the order of 11 x 10^° eV/cm2/hr at the sample

position.

Measurements of the number of 250 nm centers produced (assuming an oscillator

strength of 1) as a function of the absorbed dose were made using the method described

by Ritz, and his form of the Smakula equation TV. H. Ritz, Phys. Rev. 133, A1452 (196^)].

The resulting curve (Fig. 9) shows an initial, fast-rising region which is

commonly attributed to defects already present in the crystal. The "linear" portion

of the curve which follows is usually taken to be the result of damage to the crystal

by the absorbed radiation. Extrapolation of the "linear" region back to zero absorbed energy, indicates an initial concentration of defects of the order of

3 X loio centers/ cm^. The slope of the region indicates that the absorption of

90,000 eV is necessary to form one 250 nm center.

3.3 Stacking Fault Energy in Silver-Tin Alloys

A. W. Ruff, Jr.

L, K. Ives

Lattice Defects and Microstructures Section

Measurements are being made on isolated extended dislocation nodes in thin foils

of silver-tin alloys. The tin content varies from 0-8 atomic percent over the solid

solution range. The radius of the circle inscribed within each extended node is

measured (bisectrix method). Since the node plane is generally inclined at some angle

to the plane of projection in the electron microscope, the inscribed circle becomes

distorted and corrections are required. The node plane and orientation in the sample are determined from suitable electron diffraction patterns. The Burgers vectors of

the nodal dislocations are determined from the dislocation contrast behavior in

different Bragg reflections. The samples are mounted in a two-axis microgoniometer

which can produce a tilt up to I6 degrees in any direction. Bri^t-field studies are

then conducted on the nodes by tilting the samples into different single Bragg

reflections.

Several different theories exist which relate measured node radii to the material

stacking fault energy, differing in the complexity assumed for the problem. Two

theories have recently been reported (one analytical, one numerical) which treat the

problem in a realistic fashion. They require as input information the node radii and

Burgers vectors, along with other constants of the material.

26
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27
Preliminary results have been obtained for the alloy compositions ^, 6, and 8

atomic percent tin. The full significance of the data must wait for the results of all

compositions, and for a comparison with x-ray faulting probability measurements on the

samples. First indications are that the fault energy decreases with increasing tin

concentration from an extrapolated value of about 40 ergs/cm^ for pure silver, to a

value of about ^ ergs/cm2 at the solid solubility limit. This low value would explain

the profuse twiniiing and faulting observed in this and other similar alloys. Figure 10

illustrates a node in a sample of 8% tin, the transmission micrographs taken in two

different reflections. In the lower micrograph, the nodal stacking fault is not

visible due to its orientation with respect to the operating reflection. Two of the

three nodal dislocations are visible, however, leading to the Burgers vectors assignments shown.

JA Stacking Fault Probabilities in Metals

C, J. Newton

A. W. Ruff, Jr.

Lattice Defects and Microstructure Section

A study of stacking fault probability "by means of X-ray diffraction effects has

been undertaken in a series of silver alloys. Small relative changes in the separation

of the diffraction peaks in the x-ray powder pattern are observed when one compares

the pattern from the cold-worked material with that from annealed material of the same composition. This relative pealv shift, as well as certain other diffraction effects,

enables one to calculate the probability of faulting in the cold-worked material.

The specimens currently under examination are a series of uniformly prepared

filings of ingots of silver-tin with the tin content ranging from zero to about ten

atOTTiic percent. The angles of diffraction of the first two diffraction lines are being determined by point counting intensities in a diffractoraeter and employing a parabola-fitting procedure at the peak. This yields the relative peak position with a precision of about ± 0.005° in 2n. The relative peak shift is then found with a precision of about ± 0.01°. The relative peak shift, and the stacking fault

probability computed from it are found to increase quasi-parabolically with the

increase of tin content in silver. Figure 11 shows the peak separation

A20 = 2G2oo-26]_ii, in the annealed and cold-worked material as a function of tin

content; and Figure 12 shows the relative peak shift, MZQ = A2Bcv/-^2e^nn» which is

proportional to minus the stacking fault probability.

Consideration is being given to extending the measurements to solid alloy

specimens and to other solutes in silver. It is hoped to correlate the observed

stacking fault probabilities with stacking fault energies measured in the same material by an electron microscopic technique in another project in this section.

i

28
Figure 10. Transmission electron micrograph from a sample of silver'- 8 atomic

percent tin. The dislocation node is shown in two different Bragg reflections,

(ill) and (311). The nodal stacking fault is visible in the first case but not

in the second, due to an orthogonal relation between the stacking fault shear and

the (311) reflection. The observed contrast differences lead to the assignment

of Burgers vectors shown. The node distortion is attributed to surface effects

and to its inclination with respect to the viewing direction.

29
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Om

bO

•H fi P^ -H

31
3.5 Extrinsic Stacking Faults in Silver-Tin Alloys

L. K. Ives

A. W. Ruff, Jr.

Lattice Defects and Microstructures Section

Three-fold dislocation nodes which form a planar network in FCC materials must

satisfy certain rules of continuity. In particular the two possible nodes, called P

and K-nodes, must alternate in a stable network. The K-nodes are themselves, stable

when extended, due to mutual repulsion of the partial dislocations across the node.

The P-nodes will, conversely, contract to a point at the node center. The simple

network therefore consists of alternate extended and contracted nodes.

A different conclusion is reached, however, if both types of stacking faults

possible in the FCC structure are included. The normal intrinsic fault, which

corresponds to a single slip process, exists at the extended K-nodes. The contracted

P-nodes can now also extend, containing an extrinsic fault. This type of fault is

predicted to have a greater energy than the intrinsic fault, since it is crystallographically equivalent to two adjacent intrinsic faults.

Previously only intrinsic faults had been reported in FCC alloys. V/e have

observed recently both types of faults in alloys of silver-8 atomic percent tin, using

transmission electron microscopy techniques. Figure 13 shows a typical example of

adjacent intrinsic-extrinsic dislocation nodes. A similar and independent result was recently reported in an alloy of gold-tin, and this phenomena may be generally true

of very low stacking fault energy materials, 'ihile no theory exists yet by which the

extrinsic P-node shape parameters can be translated into fault energy, it seems clear

that the extrinsic fault energy is several times greater than the intrinsic fault

energy.

I^'Iany questions remain, however. Including those concerning segregation at the

different faults, and the temperature dependence of the fault energy. The exact

mechanism by which the extended P-nodes form is not clear, nor are the conditions which

determine the balance where the two faults meet. Observations show that the extended

P-nodes are glissile; this may explain why only intrinsic faults are found to intersect

the sample surfaces. So far, this has precluded a more direct contrast study of the

fault character.

3.6 Thermodynamics of Segregation of Solute Atoms

to Stacking Faults in FCC Binary Alloys

R. deV/it

Lattice Defects and Microstructures Section

and

R. E. Howard

Metal Physics Section

As described in NBS Technical Note 251, Section 3.5, the object of this work was

to calculate on the basis of a certain model of the stacking-fault (1) the equilibrium

concentration of impurity atoms which segregates there, (2) effects of such segregation

32
Figure 13. Transmission electron micrograph of adjacent three-fold dislocation

nodes in a sample of silver - 8 atomic percent tin. Both nodes are extended in

contrast to the usual alternation of extended-contracted nodes in the FCC

structiire. The left K-node labeled I contains the usual intrinsic stacking

fault. The right P-node labeled E has expanded, containing a triangular region

of extrinsic fault. Only one of the three bounding dislocations is visible in

the (ill) reflection operating.

33
on the stacking-fault width and on certain mechanical properties determined tiy the

width, (3) the relation between the stacking-fault energy and the occurrence of phase

boundaries in f.c.c. alloys. A paper has "been prepared and has "been accepted

(Dewit and Howard I965).

3.7 Oxidation of Iron at Low Pressures

Jerome Kmger

H. T. Yolken

Corrosion Section

Preliminary studies of the oxidation at 300°K of hi^ purity polycrystalline iron

surfaces prepared under ultra-high-vacuum conditions was studied using ellipsometry to measure film thickness. By working at low oxygen pressures ("between 10"' and 10"^ torr)

it was found that the early stages of the oxidation process followed a linear growth

law (see Fig. 14) with rate "being proportional to the pressure. This behavior is in

agreement with a picture proposed by Cabrera. The sticking probability of oxygen in

the pressure range studied was of the order of 5 x 10-3. Traces of water vapor lowered

the, limiting film, thickness approached in the latter, nonlinear, oxidation stage to 18 A from the 26 A found at all pressures for dry oxygen. This work has been published

(Kruger and Yolken 1964).

Studies are now underway on iron single crystal surfaces with special attention

being paid to thermal effects on the properties of the oxide film on the iron.

3.8 Defects in Thin Oxide Films

Jerome Kruger

Carol Lee Foley

Corrosion Section

The work described in Technical Note 25I, Section 3«7 was extended to films

formed on iron by anodic polarization in 0.1 II H2S0ji|. The films formed had the same spinel structures as those found for films formed in the slightly alkaline borate

solutions indicating that the nature of the passive film on iron may be independent of

the pH, in the range studied (l-9)» at which it is formed. Further analysis of the

electron diffraction data by C, J, Bechtoldt.of the Lattice Defects and Microstructures

Section have found that the super lattice lines reported earlier were probably not due

to the oxide film on the iron but to impurities.

3.9 Order in Ag-^Sn

C. J. Bechtoldt

Lattice Defects and Microstructures Section

Single crystals of AgoSn were grown in dilute solutions of silver in tin by slowly

cooling. Single crystals of Ag3Sn were separated by dissolving away the tin phase in

concentrated IICl. Examination of processing patterns disclosed extra weak spots

indicating that the "a" parameter of the orthorhombic cell is 5*99 A or twice that as given in the literature and the structure is that of the lU3Ta prototype. The intensity

of the extra reflections resulting from ordering is probably enhanced by the additional

freedom in atomic positions provided by this structure. Atomic parameters have not

been determined.

34
o<

10 20 30 40 50 60

TiME.min

70 80 90

Figure 14. Change of oxide film thickness on iron with time at different

oxygen pressures and at 300°K.^ All curves eventually approach the same limiting film thickness of 26 A.

35
3.10 Copper Surface Self-Diffusion

A. J. Melmed

Corrosion Section

Experiments were undertaken to determine the activation energy for surface selfdiffusion of copper and the effect thereon of a strong electric field. For this work

copper crystals were grown on tungsten field emitters mounted on temperature-resistance

calibrated support loops. Surface diffusion was caused to occur at various temperatures

in the presence of an electric field and the rate of material transport was measured

as a function of temperature and average field strength. The crystal was then smoothed

with no applied electric field and the rate of this process vs. temperature was

measured.

These measurements are still in progress, "but tentatively the results indicate

that both processes follow an Arrhenius-type relationship, and the activation energy

is about 12 ± ^ kcal/mole for the zero field case.

3.11 Theory of Point Defects in Crystals

R. E. Howard

Metal Physics Section

This work is on the statistical theory of point defects in crystals. Its

object is to understand certain macroscopic properties of crystals which depend on matter transport in terms of the atomistic properties of point defects.

1) A review article "Ifetter Transport in Solids" prepared in collaboration with

Dr. A. B. Lidiard of the Atomic Energy Research Establishment, flarwell, England has

appeared (Howard and Lidiard 1964). This article reviews the transport of atoms

through crystalline solids under the influence of external electric fields, chemical

and isotropic concentration gradients and thermal gradients. The main emphasis is on

the statistical and thermodynamic description of these phenomena via the theory of

mobile lattice imperfections.

2) Some recent experiments on thermal diffusion in dilute alloys were analysed

theoretically and values of impurity heats of transport were derived from the experimental data. (Heats of transport are basic atomistic parameters that describe the

tendency of an atom to move up or down a temperature gradient). A paper on this has

been accepted (Howard and Lidiard I965).

3) A new method was developed for the calculation of correlation factors,

quantities that relate measured diffusion coefficients to atomic jump frequencies. In

particular, the so-called random-wallc technique for calcul ting correlation factors was extended from cases of special symmetry to those of general symmetry. A paper on this will appear in the Proceedings of the Fifth Conference on the Reactivity of Solids

tfenich (Howard I964). Work is in progress applying the method to several special

cases involving diffusion by di-vacancy pair and impurity-vacancy pair mechanisms in

metals and ionic salts.

I

36
3.12 Nuclear Magnetic Resonance

L. H. Bennett

R. ¥. Mel)s

R. J. Snodgrass

Alloy Physics Section

a) Nuclear Magnetic Acoustic Resonance

The studies of nuclear magnetic resonance through acoustic excitation of single

crystals in high magnetic fields were continued. Employing a potassium iodide crystal

as a me^s for determining methods of improving the experimental technique, however,

resulted in an actual degradation of the olDserved signal with time. Careful inspection

indicated deterioration of the crystal prohahly occurred due to diffusion of its gold

plateing "beneath the surface. New crystals of this and other salts are "being secured;

these will he catrefully processed to appropriate forms and finish for further tests.

Further effort was made to ohserve the Cu acoustic resonance, as reported hy

Barnes (Nature 200, 253 (19^3) )» without success. Theoretical analysis indicates

serious errors in Barnes' explanation for the resonance frequency shifts and the two narrow differing excitation Toltage ranges over which ohservahle resonances were reported for Cuo3 and Cm°5 "by Barnes. ¥e conclude that the ohserration of actual

copper resonances "by Barnes is open to question.

Other experts in the field of nuclear acoustic magnetic resonance hare indicated

to us that they have also failed to o^bserve the copper resonance.

"b) Wide Line Nuclear Magnetic Resonance

Information a"bout the electronic structure of alloys has "been o"btained "by

analyzing nuclear magnetic resonance linewidths. Knight shifts and quadrupole effects.

Extensive measurements on lead "base solid solutions have "brought a"bout a hetter understanding of the changes in internuclear and electron-nuclear interactions produced "by

the addition of impurities. In particular, the oscillations of electronic charge

density screening impurity atoms have "been shown to he ineffective in producing large

changes in the local magnetic field at a nucleus in the polyvalent system. The

fractional change in the Ph207 Knight shift expressed as a function of solute

concentration, C, is only Ak/k «i0.05C, the slope heing proportional to the difference

in valence hetween the impurity atoms and the lead atoms. The ahsorption linewidths

"broaden rapidly upon addition of solute and depend linearly on the applied magnetic

field. Indirect spin exchange and pseudo-dipolar coupling are largely responsi"ble for

the hroadening, while the non-contact, ordinary magnetic dipolar interaction hetween

the electron and nuclear spin plus a distrihution of Knight shifts (charge oscillations)

may explain the field dependence. Large amounts of p-character in the wave function

at the Fermi surface are indicated from values of the near-neighhor exchange constant,

in lead-indium alloys h~^|Bpi3_inl = 1.0 kc/sec.

37
The nuclear resonances of In-'--^^, Bi^^^^ Tl^^^, Hgl95, and Sb^^l ^s solutes in fee

lead solid solutions have also been measured. The unexpected observation at different

solute concentrations of the quadrupolar nuclei In^^^, Sb^^l and Bi^^^ indicate that

quadrupole interactions are screened to a high degree. Comparison of values of the

solvent and solute shifts are also consistent with short range screening in these

alloys, although no quantitative theory has yet been offered.

c) Nuclear Ifegnetic Resonance in Ferromagnetic Metals

Apparatus has been developed for measuring the nuclear magnetic resonance spectra

in ferromagnetic metals under hydrostatic pressure of up to 7 kbars. With this

apparatus, the changes in internal field at the position of the nucleus upon application

of hydrostatic pressure have been measured for Ni°l in nickel and for Co57 as an

impurity in nickel. This data was used to separate the implicit and explicit effects

of temperature on the internal fields at these two nuclei. Although the effect of

thermal expansion is rather large, the changes in the internal field due to implicit

effects of temperature at the two nuclei remained as large after correction for thermal

expansion as before. We have no satisfactory theoretical explanation for even the sign

of the pressure effect.

3.13 Influence of Stacking Faults on Plastic

Deformation at High Temperatures

J. A. Simmons

Metal Physics Section

H. C. Burnett

Metallurgy Division

and

W. D. Jenkins

W. A. Willard

Engineering Metallurgy Section

Research has been started on the role of stacking faults in plastic deformation

in the particular area of high temperature creep. A Baldwin creep machine has been

adapted for inert atmosphere tests of copper and copper-germanium alloys in the 500°C - 8OOOC range at stresses above 1200 psi, and on an experimental program worked out for

the determination of activation energies for intragranular motion of dislocations using

etch pit studies. Experiments will be run to determine the influence of stress and

stacking faults in creep near subgrain boundaries.

38
3.1^ Effect of Fast Neutron Irradiation on Plastic

Deformation of the B.C.C. Refractory Metals

B. W. Christ

Engineering Metallurgy Section

This investigation was initiated at the National Bureau of Standards on

Novem'ber 2, 196^. The National Bureau of Standards' reactor at Gaithershurg, Maryland,

currently in the final stages of construction, figures prominently in this research

program.

A comprehensive review of the literature relating to radiation effects on the

mechanical properties of the b.c.c. refractory metals has been completed. Laboratory

facilities to permit treatment of these materials in the temperature range, 1000-

2000°C, and at pressures of 10~5 > io-7 mm Hg, are being developed. An experimental

investigation of the effect of the interaction between radiation-induced defects and

dislocation recovery structures (as revealed by optical and electron microscopy) on tensile deformation at various strain rates in polycrystals and monocrystals is

currently being organized. The role of the aforementioned variables in the transition

from dutile-to-brittle behavior will be examined. High purity vanadium has been

selected as the most appropriate b.c.c. metal for this study.

3.15 Characterization of Electrodeposited Crystals.

F. Ogburn

A. de Koranyi

Electrolysis and Metal Deposition Section

Two general shapes of copper crystals were grown electrolytically in acid

solutions of cuprous chloride and sodium chloride. These two shapes may be designated

as dendrites and approximately equiaxed. By appropriate control of the current,

potential, and solution composition, we can grow dendrites of a centimeter or so in

length at will or grow clusters of large equiaxed crystals, each such crystal being

several millimeters across the shortest dimension. It appears that all the equiaxed

crystals and dendrites are twinned, and growth is along the twin plane.

The difference between dendrite and equiaxed crystal growth appears to be one of

rate of growth in the plane of the twin boundary. That is, the dendrites grow very

much more rapidly than the equiaxed crystals, and this rapid growth is parallel to the

twin boundary. Other factors were operating since the growth of an equiaxed crystal

could not be changed to dendrite growth even though the reverse change was easily made

by reducing the rate of growth for a short time.

Microscopic examination of cross sections of the copper deposits and x-ray

diffraction patterns indicate significant amounts of foreign material and misalignment.

We have also noted features of the mode of growth which might be explained by the

presence of impurities that are absorbed on the copper surfaces.

The current work is directed at eliminating the organic impurities in our copper

solutions and working out techniques for testing the purity of our solutions. This

will permit comparison of copper crystals grown from ordinary and purified solutions.

39
The work with lead dendrites reported in Technical Notes 236 and 251 was reported

to the Electrochemical Society in October and has "been written up for publication

(Ogburn, Bechtoldt, Morris and de Koranyi I965).

3.16 Application of the Kossel Technique to Cubic Materials

H, Yakowitz

D. L. Vieth

Lattice Defects and Microstructures Section

The geometrical factors governing the reduction of a Kossel X-ray raicrodiffraction

pattern to lattice spacing values have been considered in detail. In particular, the

proper pattern geometry and orientation yielding the maximum precision and closest

approach to accuracy in cubic materials was investigated. The results indicate that

conic interactions yielding lens shaped figures on the pattern (Fig, 15) should be

used to reduce lattice spacings.

It is found that such "lenses" could be expressed in terms of the wavelength used

to excite the pattern, the indices of the conies responsible for the lens shaped

figure, the unknown lattice spacing and the angular length of the lens, as

(Gielen et al I965) [ a = f sec Y where:

a is the lattice parameter

f is a constant depending on the wavelength and indices

Y is the half-angle of the lens

The reduction of a measured length on the flat film to a true angular dimension

has been deduced. It is found that three special cases of lens orientation can be

rigorously solved for this gnoraonic projection distortion and tliat obtaining these

cases is not is not difficult (Yakowitz 19^5) . A ratio of lens lengths, R = l-i/lz* is

used to reduce the measurements to the final lattice spacing. Using one wavelength,

the resultant equations are:

= K^]*

u, V, and w are numerical constants depending only upon the indices of the conies

forming the lines.

From this, one obtains the sensitivity as:

Aa RaR (w - v) a (r2-1)(vR2 _ w)!

40
Figure 15. Transmission Kossel pattern of Fe-3-w/o Si taken using Fe-K radiation.

Sample oriented [llO] : [001]. The source was an electron probe microanalyzer

beam, ten micron diameter operating at 30 klV.

41
For LiF, the measured value of the lattice parameter is a = 4.02668A ± 0.000035A,

a precision of better than 7 PPM»

In Fe-Si alloys, the [llO] : [0011 orientation is "being studied with a view

toward correlating magnetic domain structures with local strains as deduced hy the

Kossel method. Figure W is a transmission pattern of Fe-3^Si showing lenses capa^ble

of use for lattice parameter measurement. The value measured for the unstrained

alloy is a = 2.86268 A ± 0.00003 A, a precision of 10 PPM.

3.17 Study of Crystal Defects

D. J. Barber and N. J. Tighe

Physical Properties Section

and

E. N. Farahaugh

Crystal Chemistry Section

Difficulty in specimen preparation has hitherto prevented the direct study of

structural defects in hulk crystals of rutile by electron microscopy. In earlier

work, Ashbee, Smallman and Williamson TProc. Roy. Soc. A, 276 , 5^2 (1964)] and

van Landuyt, Gevers and Amelinckx fPhys. Stat. Solidi £_, 307 (1964)1 have used TiOg

samples produced by the oxidation of TiC or Ti metal. A method reported previously

in NBS Technical Note 236 has now been used to prepare samples from bulk crystal, and

these were examined directly &l high temperatures. The results, which include the

discovery of a previously unknown slip system <100> {001} , have been submitted for

publication (Barber and Farabaugh I965). Three slip systems are now known for TiOg.

Optical and etching studies on magnesium fluoride, associated with electron

microscope investigations reported in MS Technical llote 236, have revealed that

the slip behavior of MgFg closely parallels that of TiOg. Selective etching of

dislocations emerging on {lOO} and {llO} surfaces is produced in hot concentrated

sulfuric acid. Etch pits on matched {llO} cleavage faces are shown in Figure l6a

while Figure 16b shows the distribution of glide dislocations around a 10 gm hardness

indentation. It is now known that MgFo has the following glide elements: {llO} <001>,

{001} <10Cc> and [OlT) <011>.

Some earlier work on sapphire crystals (Barber, I964) has now been published.

3. 18 High Voltage Laue X-Ray Photography

B. Paretzkin and H. S. Reiser

Crystal Chemistry Section

A more complete paper on our high-voltage x-ray photography technique (see NBS

Technical Notes 174, Section 5.I3, I97, Section 3.14, 236, Section 3. 16) has now been

published (Paretzkin and Reiser, I964).

The advantage of using fine-focus x-ray tubes has now been demonstrated, but so far such x-ray tubes are not readily available for voltages above I50 kV. For crystals

with a thickness-density product in excess of lOg cm~2 voltages above I50 kV are

required.

42
Figure l6a.

Fi^gure . l'6b

.

Figure 16. a). Matching [llO] cleavage faces after etching for 12 seconds in

sulfuric acid at 200°C.

b). Etch pits at the sites of glide dislocations produced by a 10 gm

hardness indentation on a [lOO] surface.

43
3.19 Diffraction Topography

R. D. Deslattes and B. Paretzkin

Crystal Chemistry Section

Our work on the diffraction topographic characterization of ammonium dihydrogen

phospliate (see IJBS Technical Notes 236, Section 3.1^, ITBS Technical Kote 251, Section

3.13) has reached a more or less satisfactory completion (see Section 2.13 of this

report). The topographic features tentatively ascrihed in previous reports to dislocations have heen shown to he in approximate one to one correspondence with etch

pits. The latter have heen shown to occur at sites of emergent line defects which

have in turn heen shovm to "be mohile alo^g preferred directions under stress at

elevated temperatures. The association of defect images with edge dislocation is thus

possible. When, however, an attempt is made to calculate the shape of the diffraction

contours according to the schematic theory of Bonse fZ. Physik 153 1 278 (1959)]» the

results strongly disagree with observations. While the significance of dynamical

effects has heen noted fU. Bonse, Z. Physic 177 « 385, 5^3 (1964)] this seems to he

a situation in which they must be assumed to be dominant. It is hoped to make some initial attempts during the next report period at a formulation of the dynamical theory

applicable to defect-occasioned diffraction contrast.

3.20 Effect of Point Defects on the Dynamic

Properties of Crystals

J. B. Wachtman, Jr., S. Spinner, S. Marzullo, R. W. Dickson

Physical Properties Section

and ^

A. D. Franlclin

Institute for Materials Research

Mechanical and electrical properties are being studied as a function of

temperature and frequency and the results interpreted in terms of chemical impurities

and related point defects.

Measurements at frequencies near 2k Hz of internal friction in rutile doped with

.1/0 Ni showed a peak at 40"C with tensile stress along flOOl or [110] and a peak at

180°C which occurred with stress along [100] but not with stress along TllO]. As

mentioned in the last report, these two peaks can be attributed to single interstitial

ions and pairs of interstitials respectively. The symmetry arguments supporting this

conclusion have been given (Wachtman and Doyle, I964). This conclusion was supported

by the observation that the peak for pairs is still present after^vacuum reduction but

that the other peal^ was not. Recent observations show that upon'reoxidization in

stages the pealc for isolated interstitials reappears and grows at the expense of the

peak for pairs. It is thus reasonable to assume that Ni is predominantly in interstitial sites and forms pairs with interstitial titanium ions when these are introduced by vacuum reduction.

Recent measurements on TiOg doped with ,05% Cr show very similar behavior. Two

peaks are again seen in lightly reduced specimens; the peak for isolated interstitials

grows with reoxidi/.ation and the peak for pairs can be made unobservably small by

heating in one atmosphere Og at 8OOOC. In Ni doped rutile the same heat treatment

does not completely remove the pealc for pairs; this result suggests a tighter binding

for Ki-Ti pairs than for Cr-Ti pairs. ,, i
This simple model of interstitial ions in rutile agrees with spin resonance

evidence for Ni and Ti "but is in conflict with the claim that Cr ions do not go into

interstitial sites hut substitute for Ti ions in normal structural sites. It may he

that some defect model associated with substitutional Cr could give the observed

orientation dependence of the internal friction hut none has yet been devised. The

close parallel with the behavior of Ni doped rutile supports the idea of interstitial

Cr and suggests that the spin resonance evidence should be reexamined.

Work on the dielectric relaxation associated with small amounts of CaO in solid

solution in Th02 was continued. Analysis of the dispersion of e' and e" due to the

point defect associated with Ca (presumably a dipole consisting of substitutional Ca

paired with an oxygen vacancy) is complicated by the fact that the background contribution of these quantities does not have the simple frequency dependence associated

with finite direct current conductivity. It was suspected that this effect might be

associated with grain boundaries (single crystals of Th02 doped with CaO are not

available). Measurements on undoped polycrystalline Th02 support this belief; a very

broad dispersion was found which did not occur in undoped single crystals. This broad

dispersion is itself superimposed upon a low frequency dispersion in e' which is also

seen in undoped single crystals and which may be a surface layer effect. The effect

of specimen thickness and dc bias is being investigated.

These background effects are interesting in themselves, but better quantitative

description is also desirable to permit improved analysis of the dipole relaxation

effect. The latter is well described by a Debye function at 2^0°C but preliminary

analysis based on fitting a Fuoss-Kirkwood function indicates a broadening of the

relaxation as the temperature is increased to 309°C. This effect is surprising but

might result from additional modes associated with second nearest and more distant

sites as discussed for the rock salt structure (Franklin, Shorb, and Wachtman, 1964).

The relaxation mode analysis mentioned above has been applied to the calculation

of correlation coefficients for diffusion of impurity ions by a point-defect mechanism

in crystals. Tracer diffusion can be handled readily and neatly with results in

precise agreement with those obtained earlier by Compaan and Haven [Trans. Faraday Soc.

52 , 786 (1956)]. For impurity diffusion, the formalism is the same, but the computer

problem is more difficult. Work on solving this problem is proceeding in collaboration

with R. C. F. McLatchie, at Harwell.

The intensity of the relaxation associated with coupled point defects is usually

treated by simple Debye theory, with no internal field effects. However, recent

experimental results ascribed to vacancy pairs in KCl by Sastry and Scrinivasan [Phys.

Rev. 1^2, 24^5 {1963)1 and Economou [Phys. Rev. l^l, A1020 (196^^)1 have cast doubt upon

this treatment. It has been shown (Boswarva and Franklin, I965) that indeed internal

field effects should be included. For impurity-vacancy pairs they may not be significant, but for vacancy pairs they can introduce a factor of 2 or 3 in the intensity.

3.21 Formation Energies of Point Defects in CaFp

A. D. Franklin

Institute for Materials Research

The Born model of the ionic solid is being used to calculate the formation

energies of various point defects in CaFg.

Repulsive parameters were chosen that successfully reproduced the interatomic

spacing, elastic constants, and static dielectric constant of CaFg. Using these

constants, preliminary calculations were made of the energy of insertion of an F~ ion

45
from infinity into an interstitial site, and the energy of removal of an f~ ion from

a lattice site to infinity, leaving an F" vacancy. The resulting numbers (Franklin,

1965) are

Interstitial Energy -1.6 ev

Vacancy Energy ^.3 ev

2.7 ev

The sum is satisfactorily close to the experimental value of 2.8 ev of Ure TJ. Chem.

Phys. 26, 1363 (1957)].

In this preliminary calculation, the relaxation of only the ions immediately

adjacent to the defect was considered explicitly, that of the second shell "being

handled by an approximation. Work has proceeded on writing expressions for the energy

including explicit relaxation of two shells of neighbors, and incorporating other

refinements. A computer program to find the minimum energy will be written, and used

to find the energy of insertion of F", Na , and Ca2+ interstitials, Na'*" and Y3+

substitutionals, and creation of F" and Ca2+ vacancies.

3.22 Laser Probe for Micro-analysis

B. F. Scribner

M. Margoshes

and

S. D. Rasberry

Spectrochemical Analysis Section

A description of a laser probe for analysis of small samples was given in NBS

Technical Note 197, Section 3»10; and a discussion of single-spike output operation

of the laser was presented in KBS Technical Note 251, Section 3*9. In the past six

months the factors which govern the precision of quantitative chemical analysis with

the laser probe have been under investigation.

The reproducibility of the peak power output of the laser in single spike

operation was investigated. A coefficient of variation of 9% was observed, on the

basis of two groups of observations, each containing 12 successive laser bursts.

Single-spike operation is obtained only with a sacrifice in total energy output,

consequently a smaller amount of material is vaporized than if aultiple-spike operation were employed. Single-spike operation produces spectra having lower intensity;

however, due to the consistency in output the spectra are aore reproducible. The

reproducibilities of intensity ratios of spectral line pairs were measured. Lines

having well matched excitation potentials gave ratios with coefficients of variation

as low as ^ to 6% in one set of 14 measurements and four sets of 11 measurenients.

Currently, improvements are being made in the recording and photometry of the laser

probe spectra in order to improve the precision of the overall method. The precision

and accuracy of analysis for a variety of matrices are currently being examined using

the laser probe in multiple-spike as well as single-spike operation.

46

(

I

I
In addition to studies of the aspects of quantitative analysis with the laser

prolDe and application of it to several qualitative analysis prohlems, the laser prohe

has "been used to melt small regions on a single-crystal silicon wafer in a controlled

manner. This work was undertaken at the request of H, A. Schafft and N. Winogradoff,

of the Electron Devices Section in an effort to simulate the strains produced in singlecrystal semiconductors during second breakdown. (See MS Technical Note 251,

Section 3»10)» A- melt zone of 5ii diameter was achieved on a single-crystal silicon

wafer hy attenuation of the single-spike laser "beam with a Schott BG-3 filter, which

transmits 10-3 of incident 6943A li^t, coupled with a 50%T: filter. These filters

reduced the peak power incident at the wafer from 3 x 10l3 watts/cm2 to 15 x id?

watts/cm2, and the effect on the wafer was to reduce the affected zone, nominally a

crater ^O^i diameter hy 20|j deep, to a melt zone 5!-i in diameter.

3.23 Diffusion in Solids

J. R. Manning

Metal Physics Section

When diffusion occurs hy a vacancy mechanism, the individual atoms do not follow

a random walk. As a result, a "correlation factor" must be introduced into the

diffusion equations. In recent work under this project, the correlation factors for

dilute impurities in body-centered cubic, face-centered cubic and diamond structures

were calculated in terms of the vacancy jump frequencies near an impurity. Jump

frequencies for both association and dissociation of bound vacancy-impurity complexes

were explicitly included. It v;as found that the re-association jumps considerably

affect the expressions for the correlation factor.

Because of correlation effects, accurate kinetic equations for diffusion in a driving force have been difficult to obtain. This difficulty was overcome by considering planar diffusion along particular crystallographic directions and using the idea

of effective jump frequencies. With this approach, accurate kinetic equations having

the same form as those for a one-dimensional random walk were obtained. These

equations can easily be modified to treat diffusion in a driving force. Final results,

including effects from a driving force, are accurate to first order in small

quantities. (Manning, 19^4).

3.2^ Evidence for Inclusion of Perfluoromethyl Groups

In the Lattice of Copolymers of Tetrafluoroethylene

and Hexafluoropropylene

R. K. Eby

Polymer Physics Section

L. H. Bolz

Physical Properties Section

Earlier measurements of the lattice parameters of tetrafluoroethylene-hexafluoropropylene copolymers (Eby and Bolz, Technical lote 236, Section 5«13) have been

extended. Results obtained at room temperature with samples of very nearly the same lamella thickness but different concentrations of perfluoromethyl groups show a

47
significant increase of lattice size with increasing concentration of perfluoromethyl

groups. On the other hand, results for samples with the same concentration of

perfluoromethyl groups "but different lamella thicknesses show no significant variation

of lattice with thickness (i.e., the variation is zero within our experimental limits).

These results indicate that the larger lattice in the copolymers is not an artifact

associated with lamella thickness hut is the consequence of inclusion of perfluoromethyl

group in the lattice. Such a conclusion is supported by the diffuseness of (h 1) and

(0 1) reflections in the copolymer. These reflections, which are relatively sharp

for polytetrafluoroethylene helow 3OOOK, remain much more diffuse for the copolymer

even at 78OK. This result is consistent with the presence of small rotational and

longitudinal disordering of the molecules in the copolymer TE. S. Clark and L. T. I-hius, Z. f. Kristallographie 117 . 213, 109 (1962)1. This effect would he expected from

inclusion of perfluoromethyl groups in the lattice.

3.25 Magnetic Resonance Studies

T. Chang, R. A. Forman, and R. C. Frisch

Solid State Physics Section

The work of the group can he divided into two major categories, electron paramagnetic resonance and nuclear magnetic resonance.

(a) Electron Paramagnetic Resonance

The work on the EPR spectrum of Mo^"*" in rutile was concluded. An article ahout

this was published (T. Chang, 1964). The study of line shape and the measurement of

relaxation time 8,re in progress.

The EPR spectrum of W^^ in rutile has been observed. The characteristic

appearance of the W5'" spectrum is analogous to that of the Mo5'" spectrum. This

indicates that the electronic configuration (5d') and the crystalline environment are similar (c.f. NBS Technical Note No. 251, p. 38). The crystal had been carefully

oxidized and was used as its own cavity. Because of the high dielectric constant and

the high resistivity, the cavity has a very high Q (~ 200,000 at 200K). Much finer

details were observed. The spectrum shows resonance lines due to the interaction of

the electron v;ave function not only with nuclear spin of I = 0, I = ±1/2, and with

neighboring Ti nuclei, but also with some unidentified centers. So a number of weak

lines cannot be explained. Forbidden transitions, or clusters of 'j5'- ions, or modulation interference were suspected, but no conclusion could be drawn.

(b) Nuclear Resonance

Measurements have been made on the N^^ Nl^Dl in NaNOo at room temperature.

Preliminary results yield a quadrupole coupling' constant of ^'^'^ kHz. A study of the

temperature dependence of the quadrupole coupling constant in this material as a 1 function of temperature is in preparation. The purpose is to study the X-transition at J 275°C

.

As the quadrupole interactions of titanium are presently unknown, a large number

of titanium samples are being investigated. To date we have been unal^le to observe

the titanium NMR in Ti (metal), TiO, TigO^, TiN. The Knight-shifted titanium :i:-S has

been observed in TiHg and a study of it is currently in progress. In addition, the

Knight-shifted n1^ resonance in TiN has been observed and is being studied.

48
3.26 Magnetic Resonance Studies

L. M. Matarrese, J. S. Wells,

R. L. Peterson, and A. R. Cook

Radio and Microwave Materials Section

The zero-field splittings of the ^35/2 level of ferric ion in quartz have been

measured directly, in order to check the values derived from the spin Ilarailtonian

(which was deduced from high-field measurements). The measured values are 7II3 and

8812 Ifflz and the theoretical values are 711? and 876^!^ MHz, respectively. This is

very good agreement and confirms our analysis of the spectrum.

The technique used v/as very simple. A regular X-band spectrometer with tunable

cavity and klystron was used, but the field was swept through zero. The frequency of

the cavity was adjusted until the two resonances occurring at -Hres and +Hpgg came together at the center of the trace, and this frequency was recorded as the zero-field resonance frequency, i.e., the zero-field splitting in frequency units.

In the course of these measurements, two interesting effects were discovered.

The intensity of the zero-field resonance, particular the one at 8812 MHz, depended

strongly on the direction of the rf field (maintained perpendicular to the sweeping

field) relative to the crystal. A theoretical analysis of the transition probabilities

shows that such behavior is indeed expected, and that the direction of the crystal

field axes can be unequivocally determined from such an experiment. The second effect was the absence of certain of the AM = c low-field transitions. A tentative explanation for this depends on the lower level involved in the transition lying very close

in energy to the other level of the same Kramers doublet, from which a transition to

the upper level is strictly forbidden. Spin-phonon interaction may cause relaxation

into this latter level, from which transitions can no longer be excited, thus causing

disappearance of the line. There is such. a closely spaced pair of levels in the

energy level diagram for ferric ion in quartz, and the requirement that it lie lowest

forces the conclusion that the sign of D is positive. If the theory is correct, this

appears to be a method of determining the sign of D without going to very low

temperatures.

Low temperature and ElIDOR experiments are still being planned on iron-doped quartz.

We have also begun experiments on cobalt-doped quartz.

The KFM experiments on CuSO^ and KiBrp are being delayed by the necessity of

constructing a cryogenic system that will precisely maintain sample temperatures in

the range 4 to 60OK.

Measurements of spin-lattice relaxation times of dilute potassium ferricyanide,

K3[(Co,re)CNg], are in progress in order to check the effect of finite lattice heat

capacity.

49
I

3.27 Use of Single Crystals of Disodium Pentacyanonitrosoferrate Dihydrate

(Sodium Nitroprusside) as a Standard Reference Material for

Mossltauer Spectroscopy

J, J. Spijkerman, T, C. Rue^ and J. R. DeVoe

Radiochemical Analysis Section

The recent advances in the application of the Mbsshauer Effect in analytical and

structural chemistry, as well as in solid state physics necessitates standardization to provide a uniform "basis for comparison of data from various laboratories and to provide

reference tables of Mbss3)auer Spectra.

Since the energy state of an atomic nucleus is altered by its chemical or crystal

environment, and since these energy changes (chemical shifts) can only be compared,

rather than measured absolutely, NBS will provide single crystals of nitroprusside for

standardization of the differential chemical shift.

The sodium nitroprusside crystallizes [P. W. Cooke, Nature 157. 518 (19^6)] in

the bipyramidal class D2h, or mmm of the orthorhombic system. The forms exhibited are

the [110] primary rhombic prism, the [010] brachydomal prism. The crystals are

needles along the C-axis, with a =11. 8A, b = 15.52A, c = 6.22A. There are two n glides of components (a/2)+(b/2)+(c/2). The space group is D^^ or Pnmn, with 4

molecules per unit cell

Due to molecular assymmetry, the ^^dssbaue^ Effect shows quadrupole splitting.

The center of the doublet (shown in Fig. 17) is defined as the zero differential

chemical shift for Fe57.

4. PHYSICAL PROPERTIES OF CRYSTALLniE MATERIAL

This chapter is concerned with the physical

properties of crystalline material where crystal

perfection is not a primary consideration.

4.1 Crystal Orientation Methods*

E. N. Farabaugh and P. R. Miller

Crystal Chemistry Section

Modifications of the standard Laue back-reflection technique and the psuedoKossel method are being studied to determine which of these diffraction techniques is

most suitable for quick and precise orientation of large single crystals.

A pseudo-Kossel line back-reflection pattern of Ti02 is shown in Figure IS. The

Ti02 specimen was orientated with (100) planes parallel to the film.

In this laboratory the development of competence in the pseudo-Kossel technique

has the attraction arising from the applicability of this technique to measurement

of:-(l) lattice parameters in large crystals to high accuracy, (2) elastic or plastic

strain within small subgrain, (3) the range of misorientations within a crystal.

* This work is partially supported by the Atomic Energy Commission.

50
Figure 17. Mossbauer Effect Spectrum of Disodium Pentacyanonitrosoferrate Dihydrate.

The number of 14-4 Kev photons vs. the energy difference (4-25 x 10~^ eV/division)

,

with zero at the center of the doublet.

51
Figure 18. Back-reflection pseudo-Kossel line pattern from Ti02.

52
^.2 Crystal Synmetry and Crystal Properties

J. B. Wachtman, Jr.

Physical Properties Section

and

H, S. Peiser

Crystal Chemistry Section

The application of homogeneous stress to a crystal causes a lowering of symmetry

in general with the result that atoms which originally had the same energy levels may

"become non-equivalent and have different energy levels. Every such transformation

from an initial group to a final group can he expressed as a succession of minimum

steps each of which leads to a group which is a suhgroup of the initial group, a

super-group of the final group and is distinct from hoth the initial and final groups.

There are 12 such minimum steps for centro^ymmetric point groups and 25 for noncentrosymmetric point groups. The results for loss of equivalence of sites in space groups

can thus "be collected into 37 tahles according to the point group associated with

each of the space groins. These tahles can he simplified hy listing only the behavior

of the general position (see MS Technical Note 251, Section 4.2). The resulting

tables for all centrosymmetric space groups have been given (Wachtman and Peiser, I965)

together with a discussion of the method of using these results to determine the

behavior of special positions. Results have also been derived for all the noncentrosymmetric space groups and are being compiled for publication. A set of stereograms

which are useful in visualizing the results for general positions and in carrying out

the process of specialization has been prepared.

4.3 Studies in Solid-State Theory

A. H. Kahn

Solid State Physics Section

The investigation of the electronic energy-bands of cuprous oxide by the tight

binding approximation is in progress.

4.4 Seebeck Effect and Thermal Conductivity of Semiconductors*

¥. R. Thurber and A. J. H. I-lante'

Solid State Physics Section

The thermal conductivity K and the thermoelectric power Q of single crystal

samples of rutile (Ti02) were measured from 2 to 300°K. Pure, niobium-doped, vacuumreduced, and hydrogen-reduced specimens were investigated. The thermal conductivity

of the pure crystals is similar to that usually found for insulators with a maximum at

about 15°K. Boundary scattering determines K below the maximum and in the range 25 to

100°K the conductivity varies exponentially with temperature which is characteristic

of Umldapp scattering. The Callaway expression for K was used to fit the data over

the entire temperature range. From measurements in both the £ and an a direction, it was found that the anisotropy ratio K^Aa = 1.5 * -l above 250K. The ratio decreases

•"' This work was supported in part by the U, S. Office of Naval Research.

+ HATO Fellow, 1964; (present address: Department of Physics, University of Utrecht,

I'letherlands). 53
"below 250K to a limiting value of I.05 ± .1. A sample doped with 0.lf:> ITb has thermal

conductivity quite similar to the pure TiOg. The K of the reduced samples is stronglydepressed at low temperatures and not well understood at present. On oxidation of a reduced sample it was discovered that the thermal conductivity did not recover

completely to the original values measured on the same specimen "before reduction. For

one crystal a comparison of K in the reduced and reoxidized states yields values for

the extra thermal resistance which are compatible with the numher of point defects

introduced "by the reduction. The thermoelectric power of the semiconducting samples

(Nh doped and reduced) increases rapidly "below lOQOK indicating a large phonon drag

contri"bution.

4.5 Photoconductivity of Semiconductors^^

L. II. Gra"bner

Solid State Physics Section

The investigation of the quenching of photoconductivity in CdS near the "band-edge

is completed and has been written up for publication. (Grabner, 19^5). Photoemission

and photoconductivity studies as a function of temperature showed that the quenching

sets in at approximately 700K. This coupled with coincidence of an emission line with

the quenching band has led to the following interpretation: irradiation with "quenching"

radiation at the energy of a bound exciton leads to the creation of an exciton complex,

at sufficiently high temperatures the hole of the exciton complex thermally ionizes

into the valence band. The free hole then recombines with a trapped electron. The

emptied trap is then able to capture a free electron leading to a decrease of photocurrent. The exciton complex responsible has not been reported previously. It has a binding energy of 0.0^0 eV.

* This work v;as supported in part by the U. S. Office of llaval Research.

4.6 Research on Superconducting Semi-conductors

J, P. Schooley and E. Ambler

Cryogenic Physics Section

and

W. R. Hosier and H. P. R. Prederikse

Solid State Physics Section

The work discussed in Article 4.21 of Technical Ilote 251 was continued. The

dependence of transition temperature on charge carrier concentration, nc, has been

examined over the range of n^ = lO-'-^ cm-3 to 1021 cm-3 and for temperatures as low as 0.05°K. A strong maximum occurs at nc ~ 10^0 and 1^ ~ O.^^K. In other experiments,

the dependence of transition temperature on uniaxial pressures up to 200 atm. "las been briefly examined. Shifts in T^, of approximately -O.lTc have been observed for

specimens in which uniaxial stress was applied along the 100 or the 110 crystallographic directions, whereas no shift v/as observed in specimens stressed in the 111

direction. Interpretation of these results is in progress, and it follows the

theoretical treatments of A. H. Kahn and A. J, Leyendecker (Phys. Rev. 135 . AI32I (19o4)

54
and M. L. Cohen (Phys. Rev. 134, A511 (19^^). Another experiment, in which the

resistive transition was ohserved in magnetic fields up to 3 koe, indicates a gradual

return of normal specimen resistivity over a substantial region of magnetic field.

This effect will he investigated further in the coming year.

Finally, preliminary measurements have "been made of the magnetic field dependence

of the magnetic moment. The specimen examined was found to have a first critical

field of about 1 oersted and a second critical field in excess of 100 oersted at

T ~ 0.3Tc» and magnetic hysteresis was shown to he present. A sensitive magnetometer

is under construction so that precise data of this type can he obtained.

4.7 Resistivity and Hall Effect of Semiconductors

H. P. R. Frederikse

W. R. Hosier

J. H. Becker

R. C, Keezer

R. A. Forman

Solid State Physics Section

During this period a considerable effort was spent on the reconstruction and

modification of an apparatus for measuring the piezoresistance of SrTiOo. The

original equipment had been designed for experiments on InSb using small stresses

(10' dynes/cm^); the present investigation requires stresses about 20 to 40 times

larger.

In order to check the pressure exerted on the specimens, a number of commercial

strain gauges (including some designed for very low temperatures) were tested. It

appeared that these gauges did not measure up to expectations. Recent experiments

indicate that Sb-doped germanium (concentration of impurities ~10^° - lO^'/cc) will

be very useful as a stress indicator in the liquid helium range of temperatures

[Fritzsche, H., Phys. Rev. 12^ 1552 (I962)].

A large number of SrTiOo, BaTiO^ and M0O3 samples (both bulk and powder) with

different electron concentrations were prepared to be tested for superconductivity

below 1°K (see Section 4.6).

Electrical characteristics of bulk samples of these materials were measured between

1 and 300°K. In spite of concentrated efforts no Hall effect has been measured on MoOo or BaTiOo samples (except for one reading on the latter substance, which indicates an electron mobility of 0.1 cm^/volt-sec at room temperature.).

SrTiO^ samples were prepared with donor concentrations between 10^"^ and lO^Vcc;

this wide range appeared to be essential for the study of the superconducting transition

temperature as a function of carrier concentration.

The analysis of conductivity and Hall effect data obtained from measurements on semiconducting TiOg (rutile) has been completed and the existence of multiple

conduction bands has been proven. This work has been accepted for publication,

(Becker and Hosier I965).

55
4.8 Optical Constants of Iron Single Crystal Surfaces in the VisiHe Region

H. T. Yolken

J. Kruger

Corrosion Section

The optical constants of clean iron single crystal surfaces raa-intained in an ultra-high vacuujB were determined. An ellipsometric technique was used to determine

values of the optical constants as a function of wavelength in the region of 36OO A

to 7000 A.

In rig. a and h, in tne real part of the dielectric constant n^d -k^). -i*

and the imaginary part 2n2^, eg, from both our data and from that of previous workers

are plotted on a logarithmic scale as a function of wavelength. In Figure 19 where

ei is plotted it can he clearly seen that the iron surface prepared ty ultra-high

vacuum techniques shows the most marked minimum. A maximum at 4900 A in the conductivity versus wavelength (Fig. 20) curve indicates the presence of an interhand

transmtion.

A paper describing this work has been prepared (Yolken and Kruger, 1965)*

4.9 Enthalpy Measurements to 2800OK

E. D. Uest

S. Ishihara

Heat Measurements Section

A new apparatus is now in operation for enthalpy measurements on condensed phases

in the temperature range 1200-2800°K. Measurements have been completed on a very pure

graphite, (Grade CCH). Measurements are planned on pure specimens of Mo, W, MgO, ThO,

A^203» ^^^ B. The work on the enthalpy of graphite has been published (West and

Ishlnara, 19^5)

4.10 Soft X-Ray Spectroscopy

R. D. Deslattes

Crystal Chemistry Section

Owing to the continued lack of good crystals of potassium acid phthalate either

from outside sources or from in-house activities (cf. Section 2.I3 of this report) we

have again had to postpone any attack on the main present objectives of this program.

These objectives are to (btain precise measurements of the profiles of the absorption

spectra and valence emission bands of metallic sodium, gaseous and solid neon, and of

sodium and fluorine in llaF.

In the meanwhile the high (though s^ort-lived) resolving power of ammonium

dihydrogen phosphate crystals out to 10 A has been exploited in a careful restudy of

the L absorption fine structure of krypton and in preliminary reexamination of the K

absorption spectra of aluminum and alumina. The latter seems particularly interesting,

since in anodically prepared specimens the fine-structure amplitude is rather less than

that of aluminum metal. This is in sharp contrast to the usual situation. Our

hypothesis is that this anomaly is due to the "amorphous" character of anodically

56
20 -

1 1 1 1 1 1 I 1 1 1 1 1

D

Io

10 _ o _

- «^ o

-

~ 5

- — %*.. ...01 o THIS WORK

-

c

~ * '^f

• WINTERBOTTOM

1 3

- D INGERSOLL MINOR

- TOOL

2

' " A MENZEL AND GEBHART "] a

(a)

1 .i

1 1 1 1 1 1 1 1 1 1 1 1 I50

1 1 1 1 1 1 1 1 1 1 1 1a iO

20 c

- / • .A.""

o

O

-

CJ ^

10 — —

7

- a (b)

: b

.^ _ ^ 1

1 1 1 1

i 1 1 1 1 1

I 2000 4000 6000 8000 10000 12000 14000 WAVELENGTH ,

&

Figure 19. a. The real part of the dielectric constant, n2(l -k^) on a logarithmic scale versus wavelength for iron.

b. The imaginary part of the dielectric constant, 2n2K on a logarithmic scale versus vravelength for iron.

10^x2.60

2.40-

2.20

2.00

1.80

"1

I I I r 1 I r

CD o

I I I I I I

\ I \ \ L 3600 4400 5200 6000 WAVELENGTH ,

&

o o o

O

J \ L 6800

Figure 20. The frequency dependent conductivity, n^k/x, versus wavelength for iron.

57

L
prepared films. Accordingly, the spectra effects of recrystallization of prolonged

exposure to elevated temperatures will "be studied during the next report period.

In addition, it is planned to devote some time to investigation of the revelance

of short-range order theories of the long range fine structure in absorption spectra.

To this end careful measurements of the K ahsorption fine structure of sulphur in SFg

are planned (cf. Section ^.11 of this report). These will offer a much more definitive comparison with the theory of Hartree, Kronig and Petersen [D. R. Hartree,

R. De L. Kronig and H. Petersen, Physica I, 895 (193^)] than has "been previously

possible.

4.11 Optical Constants of Ifeterials from 1 to 1000 Rydhergs

R. E. LaVilla and R. D. Deslattes

Crystal Chemistry Section

The ohjectives of this new project have heen set forth in the previous report

(see NBS Technical Note 251, Section 4.5). Various designs for different components

of the single-crystal vacuum spectrometer for ahsorption measurements in the 20-200 A

range on ultra-pure materials have "been developed and assessed.

A further investigation of errors in the analysis of available optical data up to ahout 3 Rydhergs has "been conducted for germanium, silicon, and "beryllium.

4.12 Silicon Density and the Scale of X-Ray Wavelengths

Horace A. Bowman

Mass and Volume Section

Richard D. Deslattes and Boris Paretzkin

Crystal Chemistry Section

We have undertaken to repeat independently the recent work of Renins and Bearden

[Phys. Rev. 135t A890 (I964)] in v/hich the x-ray wavelength scale was successfully

related to the density of silicon and thus established with a prohahle error of 5 PP^i* Our motivations are: (1) an experiment of such fundamental importance is well served

"by an independent repetition, (2) silicon of higher perfection than that used in the

ahove experiment has "become availa"ble, (3) a density comparator of considera"bly

increased precision has "been made operative [H, A. Bowman, to "be pu"blished], (4) it

has "become possi"ble to eliminate the uncertainties associated with assigning a density

to water and to relate the density of silicon directly to that of N.P.L. mercury,

which v;as determined "by volumetry and weiring [A. H. Cook and II. W. B. Stone, Phil.

Trans. Roy. See, London, 250A, 279 (1957)].

In anticipation of this work, and for su"bsequently planned investigation of

a"bsolute lattice parameters and x-ray wavelengths, the double crystal diffraction

apparatus (see Section 4.10 of this report) has "been equipped with an a"bsolute angle

generator of high accuracy. This generator as received from its manufacturer (and

unmounted) had a claimed accuracy of ± 1/4 arc second. It has "been cali"brated in its

required mounting many times over the past six months "by the IIBS Metrology Division*.

* We are extremely grateful to D. B. Spangen"berg for this very special cali"bration.

58
An error curve has iDeen otitained such that any point on the angle generator can he

corrected to a true angular reading within 0,3 arc second (3 a limit).

Two principal prohlems hare heen encoiintered toward the end of the report period,

one or "both of whichape likely to persist as dominant concern over the next period.

The first and most fundamental is: With what precision can this material which we

call silicon he assigned a density? The prohlems here are manifold: isotopic ahundance,

chemical purity, perfection, wetting hy the comparator water, and so forth. Not the

least of these is the recent discovery of a strong diffraction contrast image in a topograph of a "dislocation-free!' specimen.

The second question is one of alignment of the douhle crystal diffraction

apparatus with a precision which will not degrade the precision required of the angular

measurements. Bearden, J. A., et al, [Phys. Rev. 135 » A89O (I964)] have descrihed a procedure which depends on two things (a 1 second tilting level and an instrument whose

axis can he made parallel to local gravity with the same precision) which are not

readily availahle to us. We are therefore trying to formulate an alignment procedure

of comparahle precision which can he entirely carried out with the existing instrument

and without involving the direction of local gravity. One such procedure has heen

devised and its evaluation will he reported on in future KBS Technical Notes.

4.13. Hall-Effect Measurements*

S. Ruhin

Engineering Electronics Section

The ohjective of this project, as indicated in NBS Technical Note 251j Section

4.6, is the estahlishment of standardized terminology and measuring methods for

galvanomagnetic (Hall effect and magnetoresistive) devices.

The first international standard on Hall effect device terminology was issued in

the form of a Secretariat document hy TC 4? of the International Electrotechnical

Commission in Septemher of I964. S. Ruhin represented the United States on the

special task group which drew up the document and which is continuing work in ratings,

characteristics, and measuring methods. The proposed military standard on Hall effect

devices (originally Hall generators) was revised to conform with the TC 4? document.

A transistorized magnetic flux density meter using electron spin resonance was

huilt, hut its operation was marginal. An improved version, modified to allow

determination of the effect of sample orientation on meter reading, is in the process

of construction. The unit is designed for tunahle operation, using plug-in heads, in

the range from 1 to 25 millitesla (10 to 250 gauss). Initial operation was in the

17 to 20 millitesla range.

This work was supported hy the Bureau of Naval Weapons.

59
4.1^^ Reference Data on Single-Crystal Elastic Constants

J. B. lachtman, Jr., S. Spinner, and R. W, Dickson

Physical Properties Section

Elastic constants of inorganic single crystals are "being determined as a "basic

physical property when suita"ble single crystals "become arailahle. Fotit elastic

compliances of rutile have heen measured from room temperature to 1000^0 (Spinner and

WaGhtman, 1964) to augment the complete set of sir compliances previously determined

at room temperature [J. B. Wachtman, Jr., ¥. E. Tefft, and D. G. Lam, Jr., J. Research

KBS 66a, !i6S (1962)]. Rutile has point group Vnmmi and so helongs to the higher

symmetry diTlsion of the tetragonal crystal system. The complete set of six compliances

for several other crystals of this division have heen determined hy other workers, "but the complete set of seven elastic compliances for a crystal of the lover symmetry

division apparently has never heen determined. The existence of a nonvanishing sj^

complicates the measurements and analysis for this case. The equations for a thin-rod

resonance technique have heen worked out; this method offers an advantage over the

ultrasonic method in that all equations are linear and no sign amhigaities arise. A

set of specimens of CaMoO^j, (point group Vm, lower symmetry tetragonal) has heen

ohtained from ¥. S. Brower, of the Crystal Chemistry Section, and measurements are underway.

4.15 Deformation and Fracture of Ionic Crystals

S. M. Wiederhorn and R, L. Moses

Physical Properties Section

The fracture surface energy of soda-lime glass is heing studied as a preliminary

step to making such measurements on non-cleavahle ionic crystals. The douhle-cantileva*

cleavage technique, first developed hy Gilman [J. Appl. Phys.,

^

2208 (I96O)] and hy

Westwood and Hitch [J, Appl. Phys., J4, 3O85 (1963)]» was modified and used to measure

the fracture surface energy of soda-lime glass at temperatures of 77°K, 195°K and

300OK in various media. Values ohtained for the fracture surface energy were 3»20

joules/meter^ in ^2.^Jl) , 3. 10 joules/meter^ in toluene (-^)-C02(s) and 2.83 joules/meter2

in dry W2(g). Although these values are reasonahle, they are greater than theoretical]^

predicted. The difference may he due to irreversi"ble effects at the crack tip during : fracture. A theoretical estimate of the strength of glass, 5»^ x 10° psi, was ohtained'

hy suhstituting the measured value of the fracture surface energy into the Griffith

equation ["Theory of Rupture," Proc. First Intern. Cong. Appl. Mechanics, Delft.,

PP 55-^3 (1924)]. This value is high and may mark an upper limit for the strength of

glass.

Fracture was ohserved to occur in two stages, an initial stage during which

velocities were less than 10"^ meters/sec and a catastrophic stage during which the

velocity increased very rapidly. The initial stage of fracture was attri"buted to

stress corrosion or statistical fluctuations at the crack tip, depending on the

environment. The catastrophic stage was helieved to he dynamically controlled. The

douhle-cantilever cleavage technique was found to he an excellent method for studying - stress-corrosion in soda-lime glass and it is felt that the technique could he applied

to study stress-corrosion in other materials. A complete description of the ahove

work is to he puhlished, (Wiederhorn, I964).

60
j Further experiments are planned on glass. We are presently measuring the

activation energy for crack motion in soda-lime glass in an aqueous enTironment

.

Preliminary measurements yield a value for the activation energy of approximately

' 20 kcal/mole. This value is close to the activation energy for Ua"^ diffusion in soda-

[ lime glass, 18.7 kcal [J. R. Johnson, R. H. Bristow and H. H. Blau, J. M. Ceram. Soc.

i 34, 165 (1951) ]> and suggests the diffusion of Na"*" as the limiting rate process for

the fracture of glass, proposed hy Charles [Prog, in Ceram, Sci,, _!, edt. J. E. Burke,

Pergamon Press, New York (196I)]. ¥e also plan to measure the fracture surface energy

of several different types of glasses to determine the effect of composition and elastic

I modulus on the fracture surface energy of glass.

j 4.16 Velocity of Sound in Ice Single Crystals*

j T, M. Proctor

I Sound Section

I

I

i Since the last report the first ice data have heen olDtained. The longitudinal

I velocity of sound V3 in an ice single crystal has "been measured from -30 to -2W°C.

iVo is the velocity associated with propagation along the Z axis of the hexagonal ice

I structure and is related to the elastic constant Cqo as follows:

2

where p is the density.

Figure 21 shows the values of C«o versus temperature and is compared to recently

pu'blished data hy A. Zaremhovitch and-^A. Kahane, C. R. Acad. Sci. Paris t.258

(2 Mar. 1965) Group 6, p. 2529, and Y. Y. Bogorodskii, Soviet Phys. Acoustic, Yol. 10

(2), Oct. -Dec. 1964, p. 124; F. Jona and P. Scherrer, Helv. Phys. Acta, 2^ 35 (1951);

R. Bass, D. Ross Berg and G. Ziegler, Z. Phys., 149, 199 (1957); R» E. Green and

L. Machinnon, J. Acoust. Soc. Amer., 28, 6, I63I (I956). Discrepancies among the data

are presently unexplained. However, it appears that the data reported here agree with

Zaremhovitch and Kahane "better than the various "near QOC" measurements do.

Two prohlems with this experiment at low temperatures are presently "being studied.

First there exists a prohlem of thermometry in the region of 400K and "below. Due to the complexity of the velocity measurement it is advantageous to o'btain a fast readout

thermometer of fairly good accuracy. Investigation of car"bon resistance controlled RC

oscillators is underway. There is a related pro"blem which concerns temperature

cali"bration of such a device. A sinple cali'bration standard is needed which will work

j in a small evacuated space. The helium vapor pressure method cannot "be used "because

I the helium region is isolated from the sample container.

The second pro"blem has to do with low temperature (less than 40°K) acoustic

coupling. The large expansion coefficient of ice makes "bonding of transducers a

pro"blem. Presently isopentane is "being studied as an acoustical "bonding material.

* This work is partially supported "by the Office of Naval Research.

61
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62
4.17 Accurate Measurement of the Fundamental Electrical Properties

of Semiconductor Crystals

J, C. Trench, L. J. Swartzendruher, G. G. Harman, H. A, Schafft

H. Winogradoff and J. A. Coleman

Electron Devices Section

As indicated in IBS Technical lote 25I5 Section 3»10> the variation in

resistivity throughout a single crystal of silicon appears to he one of the limiting

factors in the estahlishment of standard samples for hulk resistivity or in the

correlation of measurements of this property among various lahoratories. A cooperative

program heing carried out with industry with the aim of producing more uniform material

for this purpose has resulted in a substantial increase in radial uniformity, hut so

far at the cost of an increased longitudinal gradient. Samples with radial variations

of less than ± \% over a diameter of 2.5 cm and a longitudinal gradient of 12^ per cm

have heen measured. These results may he compared with values of ahout ± 2>% and 2^,

respectively, ohserved in the hest commercial sample previously received for evaluation,

iThe nominal values of resistivity in these cases were 0.2 ohm cm and 14 Ohm cm, 'respectively. Despite the higher longitudinal gradient, the characteristics of the new

I material are considerahly more suitahle for the purposes of this work and its homogeneity is helieved to he reproducihle while that of the single commercial sample was

largely fortuitous.

Measurements are underway on the temperature coefficient of resistivity of silicon,

at temperatures near room temperature and as a function of impurity concentration and

conductivity type. Because of its magnitude (roughly 0.2 to 0.3% per degree Celsius),

it is necessary to know this coefficient accurately in order to evaluate measurement

errors and to compare resistivity measurements made at slightly different temperatures

to the accuracy desirahle in this work.

A hihliography on the measurement of hulk resistivity of semiconductor materials

for electron devices has heen puhlished (French, I964) , and the last of the current

series of papers concerned with electrical potential prohlems and correction factors

having application to resistivity measurements has also heen puhlished (Reher, I964).

Studie# mentioned in HBS Technical Note 251, Section 3. 10 showed that the effect

of crystal defects revealed hy x-ray diffraction microscopy on the susceptihility of

transistors to the development of second hreakdownwas either not significant or overshadowed \)^ surface related effects that appeared to have heen present. As part of an

effort to evaluate a theory [A. C. English, Solid State Electronics 6_, 5II (I963)] of

the second hreakdown mechanism, it was determined that the extent of strain fields

ahout microscopic melts in silicon was negligihle as ohserved using x-ray diffraction

apparatus. A ruhy laser was used to produce melts as small as 2»5 ijm on the surface

of a defect-free silicon crystal. The melts were made with the aid and equipment of the

Spectrochemical Analysis Section (See Section 3»22).

With respect to the program in which the recomhination properties of hot carriers

in silicon crystals are to he measured, some further refinements in measurement

equipment have heen made. However, hecause of delays in ohtaining good samples for

recomhination studies, emphasis has heen temporarily shifted to studies of optical

ahsorption.

63
The extent of the effort devoted to silicon single crystal nuclear particle

detectors has "been considerahly increased with the start, during this period, of the

estahlishment of facilities necessary to (a) measure the physical properties of the

crystalline material (such as resistivity, minority carrier lifetimes, aid motilities ),**•

(h) evaluate and improve the fabrication procedures for lithium-drifted detectors with

the aim of producing reliahle devices with extended shelf and operating lifetimes,**

(c) assist in device measurements standardization,** and (d) in cooperation with the

National lahoratories, measure the properties of these and other solid state nuclear

particle detectors and correlate anomalies in operating characteristics with defects

in crystal structure or fahrication procedures.***

Successful epitaxial gallium-arsenide injection lasers have "been produced in

selected material. Initial failures to achieve lasing were traced, "by a comhination

of electrical optical measurements and of metallurgical and electron prohe data

supplied through the Analysis and Purification Section, in inadequate doping of the

tellurium doped epitaxial layer in the wafers supplied. This defect may "be characteristic of the gaseous deposition utilized, suggesting the need for depositbn from a melt to achieve n-type doping in excess of 1 x 10l9 cm-3,

* The work was supported in part "by the Rome Air Development Center.

^Ht This work was supported in part "by the National Aeronautics and Space Administration.

jH-f* This work was supported in part "by the Atomic Energy Commission.

^•18 Dielectric and Mechanical Properties of Crystals*

J. H. Wasilik

Solid State Physics Section

I. Simple Lattice Dynamics of Zinc Blende Structures

In our previous report (iffiS Technical Note 251, page ^2), in applying the Nath,

Born-Smith, de Launay theory for the elastic constants of diamond lattices to zinc

"blende structures, we assumed a Born-Mayer interaction "between the ions. Using this

interatomic potential, we showed that the next-nearest-neigh"bor central-force-type

force constant, de Launay 's ccg = the nearest-neigh"bor central-force force constant,

de Launay's cti, x (the nearest-neigh"bor distance/next-nearest-neigh"bor distance)2.

This resulted in a relationship among the elastic constants which fitted reasona"bly

well to the experimental values. Further investigation using a Lennard-Jones type

interaction V = -A/r. .n, gave cig/a^ = (nn distance/nnn distance)3. The ensuing

relationship among the elastic constants was also in good agreement with the experimental results. The next step is to express cc2 = 8 ol^, and solve for e using the

relations given hy de Launay (NBS Technical Note 251, page 42) "between cc]_, cxg, a and

the elastic constants. The result is a quadratic equation in 6, aS^ + "bp + c = 0,

wher a, "b, and c are functions of the elastic constants. When a and "b are evaluated,

they are found to "be quite small compared to their positive or negative components af,

a-., "bf, "b_, i.e.: a = af - a_, a « a^. or a_, and "b « "h^. or "b.. This situation makes

it impossi"ble to calculate 3 in view of inaccuracies of the elastic constants, ~ .^.

However, we seem to have found an empirical relationship among the elastic constants.

a = 24 Gil Ci2 + 20 C3_^ 0,^i^ - (11 C;^!^ + ^ C^^g^ + 40 C-^^ ^i^'^ = °

which in most instances is o"beyed to within the accuracies of the experimental data.

64
Ifop example, a/a^ < 4 x 10~3 for IiiS"b, GaSl), GaA.s, AISTd, InA^, Ge and diamond. For

ICdTe a/at,. = 3»^ x 10-2, and for Si a/a+ = 7.6 x 10-3. Possible theoretical foundations

for this relationship are "being investigated. A report (Wasilik and Wheat, I965) has

"been written.

[The h = relation fits to ~ k% for the zinc "blende structures, "but only to --20/^ for

Si and diamond; for Ge, Vbf = 7^.]

II. Exciton Contrihution to the Dielectric Constant

A search for an exciton contrihution to the low frequency dielectric constant has

tieen performed. The Stark splitting of exciton levels in CugO^ reported "by Gross

indicates TDOlarizahilities per exciton ~ 10-18 cm3, ~ lo5 times the electronic polariza"bilities of ions in common lattices. Using a Qrspoiled ruhy laser to populate the

exciton levels in CdSe, we searched for an exciton contrihution to the dielectric

constant. The results to date are negative, possiMy due to the masking effects of

photoconductive and photovoltaic currents*

* This work was supported hy the Atomic Energy Commission.

^.19 Metal-Oxide Melting Point Standards

S. J. Schneider and C. L. McDaniel

Crystallography Section

The investigation of phase relations "between container materials and metal oxides

in varous environments (EBS Technical Note 251, Section 4.14) has "been continued. Work

has "been completed on the reactions that occur in air "between Ir and a num"ber of the

sesquioxides (Schneider, Waring and Tressler, I965). These data show that Ir is

suita"ble as a container even though it oxidizes to Ir02 and usually forms "binary

compounds liPith the admixture oxide. Significantly, Ir02 (and Ir) did not react even partially with In203, ScgO^, and Al20^ in the solid state. Similar studies utilizing

an environment of inert gas or vacuum have "been initiated on systems involving AI2O3

and either Ir or W, Preliminary information indicates that no significant reaction

(compound or solid solution formation) occur in the solid state. However, the

presence of Ir causes an apparent lowering of the melting point of AlpOo. In addition,

research is also "being conducted on the polymorphism and sta"bility of Rh203 in air.

4.20 Experimental Determination of Atomic Scattering Factors

G. Burley

Crystallography Section

A redetermination with improved equipment of the experimental atomic scattering

factors for magnesium oxide reported earlier (EBS Technical Note 251, Section 4.17)

gave su'bstantially the same results. The revised values are ta"bulated "below

65
sin 9A Mg^^ 0"^

.20 8.45 5»90

.25 7.80 4.84

.30 7.W 4.01

.35 6.60 3.36

.40 6.04 2.8?

.45 5*^1 2.48

.50 4.99 2.26

J'!)^ 4.88 2.08

.60 4.04 1.95

Preliminary measurements on the atomic scattering factor for copper metal are now in progress. This material has "been tentatively chosen as an interlahoratory

comparison, tnit results to date indicate that reproducible accuracy of the order of one percent may he difficult to attain with it.

A study of the relation of the effect of ultraviolet radiation with the x-ray

characteristic temperature in the alkali halides has heen hegon. Powder diffraction

data for sodium chloride indicate hoth an increase in structural disorder and an

apparent increase in the characteristic temp eratiire. Both effects decrease after

cessation of iri^diation.

4.21 Yisco-Elastic Properties

P. B. Macedo and W, Capps

Glass Section

The elastic constants of thorium dioxide, Th02, at 25°C were detennined in

collahoration with J. B. Wachtman, Jr. of the Physical Properties Section (Macedo,

Capps, and Wachtman, 1964). The constants in units of lO^^n/m^ (10^^ dynes/cm2) were found to he: en = 3.67 ± .04, c^g = 1«06 ± .02, and c^^ - 0.797 ^ .008. The

ahoYe measurements were made as part of the calihration of the high tempesture ultrasonic interferometer now heing huilt. This apparatus will make ultrasonic measurements

up to 17000c under neutral or reducing atmospheres, and will he used initially to studj

viscous relaxation in molten glasses. The interferometer will he an improved and more

flexihle version of that reported (Macedo and Litovitz, 19^5) in that higher temperatures, a greater accuracy and a wider frequency range will he ohtained.

4.22 Electron Spin Resonance of Transition Metal Complexes

H. C. Allen, Jr., and G. F. Kokoszka

Inorganic Materials Division

E. P. R. and optical studies have heen completed on copper-doped his 8-hydroxyquinolate zinc (II). The magnetic parameters were ohtained from polycrystalline

samples at hoth X-hand and K-hand. The magnetic parameters at liquid nitrogen

temperature are g = 2.287 ± 0.004, gj.= 2.066 ± O.O66, An = O.OI7I ± O.OOO5 cm-1,

Ai = 0.003 ± .001,, cm-1, and k^ = .0090 ± 0.0001 cm-1. In the spectral range from

10,000 cm-1 to 30,000 cm-1 three optical transitions were ohserved, one at 15,400 cr"l, one at 23,000 cm-1, and one at 28,500 cm-1. Bonding parameters were calculted frothese data. The in-plane sigma and pi honding parameters were found to he ci2 = .86

and 32 _ .84, which indicates relatively strong in-plane honding, while the out-ofplane honding was found to he relatively weak, 6=1. These results are quite

66
different from the results obtained "by aersmann and Swallen for "bis 8-hydroxyquinqlate

copper (II) in a frozen solution of 60^ chloroform and Wfo toluene. fJ. Chem. Phys'.

36, 322 (1962)]. A paper reporting our data and discussing the implications of the

differences found for the two cases has "been suMitted for puhlication.

An interpre1;ation of the electron spin resonance results on zinc-doped copper

acetate monohydrate suggested the existence of an additional optical transition in

copper acetate monohydrate. This has heen ohserred as a shoulder on a previously

reported "band and its -[polarization properties have heen determined. A consistent

e3cplanation for the magnetic and optical properties of copper acetate monohydrate and

the magnetic properties of zinc-doped copper acetate monohydrate has heen proposed

and submitted for pulDlication.

Single crystals of the tris coordination compound of Zn"^^ ^^^h 1-10 phenanthroline

containing a small amount of the corresponding cohaltous compound are presently "being

investigated. Preliminary results indicate that the ligand field has rhomhic symmetry

and the orlDital reduction factor is estimated to he .84. The results of this study

will he compared with the results obtained in the cupric complex in the same host

lattice. The latter complex showed a pseudo-Jahn-Teller effect. These studies

should he completed early in 1965»

Magnetic studies are also underway on a recently-synthesized tetrahedral complex

of T*"^. Preliminary results indicate that the g values are quite similar to those

found in various ¥0+^' complexes hut that the A values are somewhat smaller.

4»23 M*dsshauer Line Broadening in Sn02

Due to Twinning Effects

R. H. Herher (Rutgers University) and J.J. Spijkerman

Radiochemical Analysis Section

Stannic oxide (cassiterite, SnOp) crystallizes in the tetragonal system, class

Vm 2/m 2/m. The space group is P42/miim, with two SnOg molecules per unit cell. The

most detailed investigation of the structure of a single crystal Sn02 [J. A. Marley

and T. C. MacAvoy, "Investigation of the Mechanism of Single Crystal Growth in High

Temperature Systems", J. Appl. Phys. J^, 2504 (19^1)1 showed a single Sn-0 "bond

distance of 2.055A, with six oxygen atoms occupying the corners of an octahedron.

This should lead to a vanishing field gradient tensor at the tin atom lattice point,

and zero quadrupole splitting, if all of the 0-Sn-O hond angles are either rT_ or tt/2 . Mosshauer spectra of Sn02 with Mg2 Snll9m source (23.8 KeY, 3/2 "" 1/2 transition")

Showed definite, though not completely resolved, quadrupole splitting. This

splitting is attrihuted to twinning, which was ohserved even in the hest single

crystals grown hy the vapor transport method. This twinning occurs primarily In the

(031) plane, so that the oxygen octahedron around the tin atom in the twin plane is

slightly deformed with a resulting non-vanishing electric field gradient tensor.

67
5. CHEMICAL PROPERTIES OF CRYSTALLINE MATERIAL

This chapter is concerned with studies of crystal

structure, phase relations, and other chemical

properties not sensitive .to crystal perfection.

5.1 Automation of Single-Crystal X-ray Diffraction

Intensity Measurements

F. A. Mauer

Crystallography Section

Modification of an existing single crystal diffractometer "by the addition of

programming and positioning modules has "been completed. The three shafts required to orient the crystal and position the counter are controlled from a console. Shaft

settings and scaler counts are recorded on a printer and on punched paper tape.

Provisions have heen made for adding a tape reader and circuit modules at a later time

to permit the system to follow a complete program punched on a control tape.

Measurements are now heing made on a crystal of Na20*4B203 and a computer program

to edit and process the output tape is heing written.

5.2 Radial Distrihution Studies of Glasses

G. J. Piermarini, A. Hyman, and S. Block

Crystallography Section

Radial distrihution studies on vitreous and polycrystalline "barium and strontium

"borates [BaO'2B203, SrO'^B203, SrO*1.5 B2O3] have "been completed (Block and Piermarini,:

1964). The conclusion drawn from these studies is that the heavy cations in the

vitreous systems occupy characteristic positions in the overall glass structure whidi are governed to a certain extent hy crystal chemical restraints. This is danonstrated

hy a correlation hetween distri'bution curves o"btained from "both the glass and

corresponding polycrystalline material, and is further supported hy an analysis of

these distri'bution curves "based on the random packing of hard spheres.

An investigation of the general nature of x-ray scattering techniques, as applied

to studies of vitreous matter, is heing undertaken. The purpose is twofold:

1) To minimize the errors inherent in present procedures.

2) To determine just how sensitive the intensity distri"bution in reciprocal

space is to the electron distrihution in real space, and thus to setup

criteria for how far one may extend the interpretation of x-ray data

ohtained from non-crystalline matter.

68
S.3 Infrared Studies of Inorganic Materials

C. E. Weir

Crystallography Section

With completion of studies of infrared spectra of anhydrous inorganic iDorates

S Technical Note 251, Section 5*9) » work has "been initiated on a similar study of

'the hydrated "borates. The hydrated "borates studied are naturally occurring minerals

["because of the difficulties inyolved in synthesizing and identifying the hydrated

icompounds. Therefore, it is not possi'ble to utilize isotope su"bstitution to assist

|in interpreting the spectra and there is a possi'bility that impurities may influence

Ithe data obtained. Interpretations will necssarily "be "based on the previous data on

jthe anhydrous "borates and known structure types of the hydrates. Most of the spectra

ihave "been obtained "but the analysis is not complete. Preliminary results show that

hydrates with similar cat ionic structure give spectra which are quite analogous.

jBecause of the complexity of the cations and the corresponding spectra, it seems

jthat conclusions concerning coordination of "boron and cation structure must "be made

jWith considerably more restraint than in the case of the anhydrous materials.

5.4 X-Ray Diffraction Studies at High Pressures

C. Weir, S. Block, and G. Piermarini

Crystallography Section

X-ray diffraction data are "being o"btained for ice TI and ice YII "by means of

powder and single crystal techniques. An existing high pressure powder diffraction

camera has "been modified to permit examination of materials of low scattering power

such as ice, and at the same time to permit o"bserTation of lines at higher scattering

angles. A new single crystal high pressure cell has "been designed, constructed, and

tested. This instrument uses a diamond high pressure cell mounted on a modified

precession camera. Both the powder and single crystal devices are undergoing further

modifications.

I By using metal gaskets "both single and polycrystalline specimens of ices YI and VH

have "been o"btained. The hkO, hkl, c-cone-axis and other single crystal precession

photographs show that ice ¥1 has an orthorhom"bic unit cell (a = 8.38 A, "b = 6. 17 A,

and c = 8.75 A), which is consistent with pu"blished powder diffraction data. The

systematic a"bsences indicate a space group P*^a and from the known density of ice YI

it is calculated that z = 20. Insufficient data have "been o"btained on ice YII to

permit reaching any conclusions.

S.5 Phase Equili"bria Determination with the Aid

of Crystal Structure Analysis

R. S. Roth and J. L. Waring

Crystallography Section

The phase equili"briuiii relations in the system Fb20^-W0o have "been carefully

studied. The thermal sta"bility of tlie four compounds whose compositions have "been

fully su"bstantiated "by crystal structure analyses (0-50 mol percent WO3) has "been

found to "be dependent on the size of the ""building-"block" which is the "basis of the

structure of each phase. The compound containing the smallest "building "block (highest

in FbgO^ content) melts congruently whereas the other three melt incongruently at

69
decreasing temperatures with increasing WOs content and size of the Milding "block.

The last two phases also have minimum staMlity temperatures increasing with increasing,

WOg content, and size of "block.

The compositions of the phases containing more than 50 mol percent WOg have "been

reduced from experimental phase equili"bria data, "based on hypotheses as to the crystal

structures inTolred. Unfortunately, single crystal structure analyses is not yet

aTailahle to confirm these compositions.

The phase equili"brium relations in the AI3O3-WO3 system hare also "been examined.

At least one new compound (and possi"bly several structurally related phases) has "been found. Its x-ray diffraction powder pattern is apparently unrelated to any known

phase. No single crystals are yet aTaila"ble for determining the unit cell dimensions

of the phase or phases. The compositions cannot even "be approximated without such dat%i as the powder patterns over a rather wide range of compositions show no recogniza"ble

systematic change and no evidence of free AlgOg or WO3

.

Some experiments have "been "begun to determine the type of phases which are formed

in the TlOg-TasOg and TagOs-WOg systems. It is expected that phases structurally

related to the two polymorphs of Ta^Og will "be formed in this system and that these will

"be different from the compounds structurally related to FbgOg which are formed in the

corresponding nio"bate systems.

Various aspects of these studies have "been reported, (Roth and Vadsley, 19^5)

»

(Roth, Wadsley and Anderson, 19^5); (Waring and Roth, 19^5) ; and (Waring and Schneider,'

1965).

5.6 Standard X-ray Diffraction Powder Patterns

H, E. Swanson

Crystallography Section

Diffraction patterns are produced for the Powder Data File, a reference

compilation used in lahoratories throughout the world for identification of crystalline

materials. The patterns have "been pu"blished in ten volumes of EBS Circular 539 and

in three sections of IBS Monograph 25. The fourth section is "being prepared for

release in I965 and will "be the first to include powder patterns calculated from ; single crystal data. Fifty calculated patterns are included. I-hich of the "best I pu"blished crystallographic data is for single crystals and the technique of calculating?

powder patterns from this data provides an economical means of extending the coverage

of the Powder Data Pile, particularly in the case of materials that are difficult to

o"btain or to handle.

'^.^ Crystal Chemistry of Silver Iodide*

"

G. Burley

Crystallography Section

A discussion of the role of strain in the hexagonal to low-cu"bic phase transformation of silver iodide (Burley, 1964a) and the analysis of the ice nucleation "by

photolyzed silver iodide (Burley, 1964"b) have "been pu"blished.

* This work was supported hy the National Science Foundation, Atmospheric Sciences

Program.

70
A radial dlstri"bution study of the powder diffraction data from different samples

of the high-cuhic structure, derived from the low-cuhic and hexagonal phases,

respectively and taken just ahOTe the transition temperature of 1^7°C indicates that

there is a difference in the average silver-iodine distance of ahout 0.04 A, suggesting

a non-random distribution of silver atoms over all available sites at this temperature.

An occupation site analysis using the available intensity data is now in progress.

5.8 Crystal Structure Analysis

S. Block, H. M. Ondik, A. Perloff , L. H. Hall, and A. D. Mighell

Crystallography Section

The crystal structure of his-dodecacarhorane, B20C4H23, has heen determined hy

the relatively new symholic addition technique for direct phase determination. The

molecule consists of two slightly distorted icosahedra joined "by a c-c "bond across a center of symmetry. In each icosahedron, a second carhon atom and four "boron atoms

are distributed over the five sites adjacent to the linking carhon.

In a second investigation, the crystal structure of the low temperature form of

Li3P04 was shown to "be related to that of the high temperature form, "but with a disordering of phosphate tetrahedra.

Work in progress includes determination of the structures of TBOg , BaBgO^,

NagBg Oj 3 , and BeGe4 Og .

fork reported earlier (BBS Technical Note 251, Section 5.4) and since published

or accepted for puhlication includes descriptions of the structure of sodium

tetrametaphosphate (Ondik, I964), and the structures of NaaPgOg and NagPaOg'HgO

(Ondik, 1965).

'^»3 Phase Equilibria

E. M. Levin and R. S. Roth

Crystallography Section

A revised edition of "Phase Diagrams for Ceramists" has "been puhlished (Levin,

RohMns, and McMurdie, I964) . It contains phase diagrams from the literature for

1002 oxide systems, 912 salt systems and comhinations, and 142 water-containing

systems. Many of these systems have potential applications in crystal growing

prohlems.

Work on the heat of transition and heat of fusion of BigOa (KBS Technical Note

251, Section 5.6) has "been completed and the results have "been accepted for publication (Levin and McDaniel, 19^5)

Phase equilihria in rare earth oxide-horic oxide systems are heing investigated

as part of a long range study of immiscihility in "borate systems. Partial phase

diagrams "between B3O3 and the 1:1 compounds were esta"blished for the following oxides:

KdgOg, SiifeOa, EUgOs, Gd^Oa , DygOg , YgOg, andHOgOg.

71
5.10 SulDliquidus Phase Separation in Inorganic Oxides 1

¥» Haller ;

Glass Section J Melts of certain inorganic oxide systems which solidify without apparent I crystallization, have the tendency to segregate into two immisciTDle glasses upon

cooling. This segregation occurs at such low temperatures, that the involved phase is

too rigid to flow and coalesce in the way low viscosity liquids do. The result is a solid composed of two continuous microdisperse networks.

Prohahility calculations were performed, which showed that the continuous nature

of the two networks may he due to the high degree of intersection within a population

of spheres, grown from randomly placed nuclei. A theory was proposed wherehy the thermal

rearrangements within such microheterogeneous systems is caused hy a diffusive transport, facilitated hy interface curvatures of opposite signs. Equations for a numher

of transport models were derived. To prove this theory, phases separation in ' NagO-BsOg-SiOg melts was initiated "by cooling. The resulting glasses received

different heat treatment schedules and the degree of microdispersity was measured hy

Ng adsorption on one of the isolated phases.

The experimentally determined law follows the theoretically derived equation for an interface-controlled "bulk diffusion process. The process was found to he

arrhenian with an apparent activation energy of i\0 kcal/mole.

Some aspects of this work have heen accepted for puhlication (Haller, 19^5)

•

5.11 Ultrasonic Measurements at Pressure-Induced Polymorphic

Phase Changes

P. Heydemann

Pressure Measurements Section ^

The aim of this work is to estahlish transition pressures of various crystalline

materials for use as fixed points on the pressure scale. To achieve this, a study

will be made of the elastic constants and internal friction at ultrasonic frequencies, - comhined with various electrical and PVT-measurements.

The ultrasonic apparatus has now "been assemhled and velocity measurements with

polycrystalline and single crystal hismuth have heen made at atmospheric pressure.

Measurements under pressure will he undertaken shortly, using a rotating-piston gage

which has heen assemhled and checked up to 18 kilohars, using the polymorphic phase

transition of AgNOg . This range will he extended to 25 kilohars using the transition

pressures of KBr and Bi I-II.

72 \
5.12 Heats of Formation of Refractory Crystalline

Substances from the Elements

G. T. Armstrong, K. L. Churney, E. S. Domalski, and R. C. King

Heat Measurements Section

As this is the first report of the work of this group, we toiefly review recent

tasks finished prior to the current period, as Well as current activity.

In a study of the heats of formation of fluorine compounds hy fluorine homh

calorimetry, a study has heen completed of the heat of formation of AiFgCc) and

currently under way and neaxly completed is a study of glassy BeF^ which will ultimately

"be related to the crystal phase. The technique consists of mixing the powdered metal

with an easily comhustihle material, in these experiments Teflon, and turning the

pelleted mixture in an atmosphere of pressurized fluorine. The Teflon sustains and

moderates the comhustion, assures a high degree of completeness of reaction, and thus

simplifies the prohlem of determining how much reaction occurs. The reactions are carried out in an advanced version of the Dickinson calorimeter, with which a measurement of the heat evolved is made with an accuracy approaching 0.01^. The overall

uncertainty of the heat of reaction is much greater, however, "because the amount of

reaction cannot "be determined so exactly, and liecause the comTmstions are not

reproducilDle with this precision.

In a series of experiments employing the same general techniques, the heats of

formation of hJL\ and a-AiBig have also heen determined and measurements of the heat

of formation of B^C are under way. In these cases, calculation of the heat of

formation of the crystalline sut)Stance depends upon knowledge of the heats of formation

of the products of comhustion, AXFsCc), BFstg) and CF4(g). The samples for these

studies were prepared "by the Carhorundum Company in a special task under which they

developed techniques and prepared very high quality samples.

The heat of formation of AJC4C3 was determined hy a somewhat different technique,

in which the carlDide was hurned in atmosphere of oxygen. Calculation of the heat of

formation of the carhide in this case requires knowledge of the heats of formation of

the comhustion products AXg 03(c) and CO3 (g) . The samples used in the comhustion

measurements were from the same material used hy Furukawa and Saha for heat capacity

measurements at low temperatures and hy Douglas and Victor for enthalpy measurements

at high temperatures. The comhustion in the calorimetric "bomh led to the little known

phase, b-H^Os, in amounts of -4-0-75^ of the total product. The remainder of the

product was a-AigOa. In order to interpret the heat measurements in terms of the

heats of formation of the starting material and products, a separate determination was needed of the difference in heats of formation of a-AigOg and S-A^gOg. This difference was determined for us hy Kleppa and Yokohawa to iDe 2.7 =^ 0.4 kcal mole"-'-.

73
5.13 Microcomposition and Structtire Characterization "by Electronpro"be Methods

H. Yakovitz and D. L. Yieth

Lattice Defects and Microstructiires Section

and

J. R. Cuthill

Alloy Physics Section

The analytical capabilities of the KBS electron prohe microanalyzer were

improTed hy the addition of a new light optical system and a new magnetic ohjective

lens. The new lens permits an X-ray emergence angle of 51° • A new fully-focussing

spectrometer was designed and "built. Provisions for light element analysis are also

"being made. A Kossel camera was "built and is "being used to prepare patterns in the

study of cu"bic materials "by the Kossel method (See Section 3»l6)*

In colla"boration with the electron pro"be microanalysis group under Dr. Heinrich

in Division 310j investigation and characterization of standards for use in quantitative electron pro"be studies has continued. In particular MS low alloy steel

standard 463 has "been characterized analytically.

5.14 Crystal Structure of Phases in Fb-Sn System

C. J. Bechtoldt

Lattice Defects and Microstructures Section

Studies were made on single crystals of FbSng grown and extracted from dilute

solutions of nio"bium in tin. They are orthorhom"bic, crystallizing in the space group,

Pddd, and structure of the CuM^ prototype. Using the setting as shown, in the

literaturg for the prototype the parameters are a = 9 •853 A, "b = 19-07 A, and

c = 5.64 A. Measurements were made on the intensities of reflections of the type OkO

and 0k2 up to k = 52 and on the type hOO and h02 up to h = 24. In addition to the

a"bsences fixed "by the space group and that of the special* positions, accidental

a"bsences occurred in such a sequence which fixed the position of Sn in 16(f) at

y = 0.4125 and Fb in l6(f) at y = 0.1250. Pinal determination of the Sn atoms at

16(e) have not "been made "but appear to "be close to x = O.I6I.

5.15 Low-Temperature Calorimetry of Crystalline Su"bstances

G. T. Furukawa, M. L. Reilly, and W. G. Sa"ba

Heat Measurements Section

The heat capacity of a variety of su"bstances is investigated in the range 10 to

400°K "by means of adia"batic calorimetry. The construction of a calorimeter for

extending the measurements down to 20K is in progress.

Measurements on KBI^ revealed a X-type solid-phase transition at 77.16 ± 0.02°K

with an entropy change of 2.92 J/deg-mole plus a "broad transition extending from a"bout

200 to 450OK (Furukawa, Reilly, and Piccirelli, I964) . A similar \-type transition

74
fotmd in ^siB\ with an entropy change of 5»10 J/deg-mole, which is close to the

theoretical value of IlCn2, has "been interpreted as an order-disorder transition

involving two possible orientations of the BH^- tetrahedrons similar to the ¥E^~

tetrahedrons in ammonium halides [W. H. Stockmayer and C. C. Stephenson, J. Chem.

Phys. 21, 1311 (1953) ]• The entropy change of the X-type transition observed in

KBH4 is approximately one-half of MnZ. The "broad transition at the higher

temperatures is interpreted as a continuation of the order-disorder transition still

incomplete at 77»l6°K,

An examination of the "additivity" of the heat capacity of mixed metal oxides

showed that the additivity is followed within a few percent around room temperature,

Tmt below ahout 200°K the compound deviates positively, increasingly with decrease

in temperature (FurukaWa and Saha, 19^5) • The correlation of additivity with

structure is in progress.

5.16 Apparatus for High-Temperature Preparation

of Pure Crystalline Polymorphs

A. R. Glasgow, Jr.

Analysis and Purification Section

A cross-sectional drawing of the special cell (discussed in Section 5»2,

IBS Technical Note 251) for use to 1000°C in phase purifications and thermal analysis

for the preparation of pure polymorphic forms of BeFg is shown in figure 22. The

numlDers in the figure refer to the disassemhly parts, the lower case letters to welds,

and the capital letters to details of other parts; these are described in the legend

to the figure. Photographs of the assembled and disassembled cell are shown in

figures 23 and 24. Figure 22 also shows two heat-exchange probes that are used for

removal of heat at re-entrant coolant well, B, and at protrusion, M, of cell for

crystal nueleation. Figure 24 shows the tool for removing vessel 6 by locking into

grooves, J.

Provisions for placing this cell into operation were completed and have entailed

the following: mounting in three-zone furnace; design and fabrication of two heatexchange probes; installation in hood of coolant lines to probes and of a system for

evacuation and pressure-control of nickel-Inconel spaces of body (F in figure) and

well (C in figure); easily removable thermocouples; and placement of a well in a dry

box to house the closed cell in a vertical position during disassembly for filling

and product removal.

Anhydrous conditions have been achieved in the dry box and work is in progress

using these developed facilities to start processing 50-gram amounts of BeFg by the

different phase-purification processes (Thermal decomposition of (1114)2 BeF*

,

crystallization, distillation, and sublimation). The process that yields a pure

polymorph will be continued until sufficient material is obtained for EBS needs before

attempts will be made to prepare a different polymorph.

75
legend

Phase Purification and Thermal Analysis Cell

1-7; Disassembly parts:

1 - Unit containing Tapor condenser for liquid reflux or solid deposit.

2 - RemoTalDle nickel support for Dew^ir.

3

- Nickel Dewar

4 - Soft nickel gasket

5 - Nickel tuhe with tapered Monel Flange at top,

6 - RemoTa"ble nickel vessel

7 - Inconel-nickel shell welded to Monel high-Tacuum coupling and cavity portion

for vessel 6.

a - h; Welds: a, e - Monel to Inconel; f , g - Nickel to nickel

"b, c, d - Monel to nickel; h - Inconel to Inconel

A - Monel, "Cajon gland", ultra-high vacuum coupling for attachment to manifold

through high-temperature valve.

B - Re-entrant cooling well

C, F - Monel, "Cajon "body", ultra high-vacuum coupling for pressure control of

space iDetween nickel-Inconel walls.

D - Monel, "Caj on-type gland", ultra-high vacuum coupling for cell.

E - Monel, "Cajon-type "body", ultra-high vacuum coupling for cell.

G - Nickel "baffles

H, K, L - Thermocouple port

I - Knol) used as lock-device for part 2.

J - Grooves for cell-insertion or removal tool for vessel 6.

M - Protrusion for crystal nucleation in vessel 6.

N - Small portion of contents of vessel 6 supercooled for crystal nucleation.

76
Figure 22. mase Purification and Theraial Analysis Cell.

77
Figure 23. Assembled cell for use at 1000°C in phase purification.

78
Figure 24. Disassembled cell for use at 1000°C for phase purification

79
6. PARTIAL LIST OF PAHTICIPMTS

There follows a partial list of scientists engaged in activities descrilDed in

this note, with indications of their research fields and organizational location within

the National Bureau of Standards. The latter may "be helpful in making contact with

individuals for the purpose of ohtaining reprints or further technical information.

Participants at the Washington I.a"boratories

Ahramowitz, Stanley: Ph.D. Polytechnic Inst, of Brookly, 19^3; infra-red molecular

spectra; Heat Division

Allen, Harry C, Jr. ; Ph.D. University of Washington 1951; electron-spin-resonance

studies; Chief, Inorganic Materials Division

Author: 4.22 ^

Amhler, Ernest ; Ph.D. Oxford University, 1953; nuclear reactions, low-temperature

magnetism; Chief, Cryogenic Physics Section, Heat Division

Author: 4.6

Armstrong, G. T. : Ph.D. John Hopkins University, 1948; thermochemistry of inorganic

materials; Heat Division Author: 5*12

Barher, David J. : Ph.D. Univ. of Bristol, England, 1959; growth perfection of crystals;^

Physical Properties Section, Inorganic Materials Division

Author: 3. 17

Barnes, J. D. : Optical and electron microscopy of polymers; Polymer Physics Section,

Polymer Division Author: 2.19

Bass, Arnold M. : Ph.D. Duke University, 19^9; molecular spectroscopy; Heat Division

Bechtoldt, C. J. ; X-ray studies; Lattice Defect and Microstructures Section Metallurgy ' Division Author: 3.9, 5.1^

Becker, J. H. ; Ph.D. Cornell University, 1957; optical and transport properties of

semiconductors; now at Xerox Corporation, Rochester, New York

Author: 4.7

Bennett, Lawrence H. ; Ph.D. Rutgers University, 1958; nuclear resonance studies; Chief

Alloy Physics Section, Metallurgy Division Author: 3*12

Block, Stanley ; Ph.D. Johns Hopkins University, 1955; x-ray crystallography;

Crystallography Section, Inorganic Materials Division Author; 5*2, 5«^> 5»8

Blunt, Rohert F. ; Ph.D. Rice University, 1949; optical properties of solids; Solid j State Physics Section, Inorganic Materials Division Author; 3*1

Bolz, Leonard H. : Crystal perfection "by electron microscopy; Physical Properties

Section, Inorganic Materials Division Author: 3»24

Bowman, Horace A. : Cartesian diver; Mass and "Volume Section, Metrology Division. i Author: 4.12 *

Breen, David E. ; Inter- and intra molecular properties of organic molecules, crystals,

and rigid glasses; Physical Chemistry Division

Brower, William S. : Crystal growth "by Verneuil process and floating-zone technique;

Crystal Chemistry Section, Inorganic Materials Division

Author: 2.13

Brown, Walter E. : Ph.D. Harvard University, 1949; soluhility and crystallography of

calcium phosphate; Dental Research Section, Polymers Division

Burley, Gordon : Ph.D. Georgetown University, 19^2; crystallography;

Crystallography Section, Inorganic Materials Division Author: 4.20, ^,7

Burnett, H. C ; Physical metallurgist, mechanical properties, etc.; Metallurgy

Division Author; 3.I3

Calvert, Joan P. : Growth of oxide films; Corrosion Section, Metallurgy Division

Author: 2.8

Capps, Wehster: Physics and chemistry of glass; Glass Section, Inorganic Materials

Division Author: 4.21

80
ICataland, George : Low-temperature thermometry; Cryogenic Physics Section, Heat

Division

Chang Te-Tse: Ph.D. Univ. of Colorado, 1962; magnetic resonance; Solid State Physics

1 c«^ Section, Inorganic Materials Division Author: 3.25

iChrist, B. W. i Ph.D. Cornell Univ., 1965> radiation effects in metals. Engineering

Metallurgy Section, Metallurgy Division Author: 3. 14

IChurney, K. L. ; Ph.D. Mass. Inst, of Technology, I96I; heats of formation hy homh

calorimetry; Heat Division Author: 5»12

Cohen, Martin L. ; X-ray diffraction studies of crystals grown at high temperatures;

Solid State Physics Section, Inorganic Materials Division

Author: 3,2

Coleman, J. H. : Ph.D. Univ. of Washington, 19^2; nuclear physics, semiconductors.

nuclear radiation detector and radiation damage; Electron Device Section, Instrumentation Division Author: 4.17

Colson, J» P. : Polymer morphology; Polymer Physics Section, Polymer Division

Author: 2.18

Comeford, J. J. : Molecular spectroscopy; Molecular Spectroscopy Section, Physical

Chemistry Division

Cook, Richard K. : Ph.D. Univ. of Illinois, 1935? acoustics and solid state physics;

Chief, Sound Section, Mechanics Division

Cooter, Irvin L.: Nuclear magnetic resonance in garnets; Chief, Magnetic Measurements

Section, Electricity Division

Coriell, Sam. R. : Ph.D. Ohio State Univ., I96I; mathematical physics; Crystallization

of Metals Section, Metallurgy Division Author: 2.3

Crissman, J. M. : Ph.D. Pennsylvanis State Univ., 19^3; polymer mechanical properties.

Polymer Physics Section, Polymer Division Author: 2.21

Cuthill, J. R. ; Ph.D. Purdue Univ., 1952; soft x-ray spectroscopy, electro-prohe

electron analysis; Alloy Physics Section, Metallurgy Division

Author: 5.I3

0-6 Koranyi, Alexandra : Crystal growth hy electrodeposition; Electrolysis and Metal

Deposition Section, Metallurgy Division Author: 3»15

Deslattes, Richard D. : Ph.D. Johns Hopkins Univ., 1959; x-ray spectroscopy;

Crystal Chemistry Section, Inor^nic Materials Division Author: 3»19j 4.10, 4.11,

4.12

ae¥it, Roland: Ph.D. Univ. of Illinois, 1959; dislocation theory; Lattice Defects and

Microstructures Section, Metallurgy Division Author: 3»6

Diamond, J. J. : Vaporization of refractories; High Temperature Chemistry Section,

Inorganic Materials Division Author: 2.15

Dickson, Rohert W. : Homogeneous stress on oxide structures; dislocation studies "by

x-ray methods; Physical Properties Section, Inorganic Materials Division

Author: 3.20, 4.14

jjMarzio, E. A. : Statistical mechanics; Polymer Physics Section, Polymer Division

Author: 2.22

j Dragoo, A. L. : Vaporization of refractories; High Temperature Chemistry Section,

Inorganic Materials Division Author: 2.15

Domalski, E. S. : Ph.D. Univ. of Buffalo, 1959; heats of formation of homh calorimetry;

Heat Division Author: 5. 12

Dove, Rohert B. : Nuclear magnetism; Cryogenic Physics Section, Heat Division

Duecker, H. C : Ph.D. Univ. of Maryland, 1964; physical effects of pressure;

Pressure Group, Inorganic Materials Division

Early, James G. : Ph.D. Rennsalaer Polytechnic Inst., I963; kinetics of crystallization;

Crystallization of metals section, Metallurgy Division Author: 2.2

I E"by, Ronald K. : Ph.D. Brown Univ., 1958; acoustics, polymer physics; Polymer Physics

' Section, Polymers Division Author: 2.18, 3.24

Edlow, Martin E. : Low-temperature thermometry; Cryogenic Physics Section, Heat

I Division

I 81
Eiseiistein« Julian C> : Ph.D. Harvard Univ., 19^8; low-temperature magnetism;

Cryogenic Physics Section, Heat DiTision

Escalante, Edward: Field emission; Corrosion, Metallurgy Division

Evans, Eloise H. i Physical chemistry, x-ray diffraction; Crystallography Section,

Inorganic Materials Division, A.S.T.M. Fellowship supported.

FaralTaugh, Edward M. : Etch-pits crystal orientation; Crystal Chemistry Section,

Inorganic Materials Division ' Author: 2.11, 3»17» ^-l

Frisch, R. C; Structure of materials and the imperfection of solids; Solid State

Physics Section, Inorganic Materials Division Author: 3.25

Foley, Carol L. : Growth of oxide films; Corrosion Section, Metallurgy Division

Author: 3 '8

Forman, Richard A. : Nuclear and quadrupole resonance; Solid State Physics Section,

Inorganic Materials Division. Author: 3*25, 4.7

Frajiklln, Alan D. : Ph.D. Princeton Univ., 19^9; properties of point defects in crystal:

Institute of Material Research Author: 3.20, 3*21

Frederickse, Hans P. R. : Ph.D. Leiden University, 1950; semiconductors at low

temperatures; Chief, Solid State Physics Section, Inorganic Materials Division

Author: 4.6, 4.7

French, Judson C: Solid state devices and materials; Electron Devices Section,

Instrumentation Division Author: 4.17

Frolen, Lois J.: Ph.D. Pennsylvania State Univ., 19^3; spectroscopy, crystallography,

microscopy; Polymers Division Author: 2.23

Furakawa, G.: Ph.D. Univ. of Wisconsin; low temperature calorimetry; Heat Division

Author: 5 •15

Glasgow, Augustus R.: D.Sc, Univ. of Bmssels, 1957; preparation and purification of

polymeric forms, phase equilibria, purity determinations at high pressures;

Analytical and Purification Section, Analytical Chemistry Division

Author: 2.16, 2.25, 5.I6

Gornick, Fred: Ph.D. Univ. of Pennsylvania, 1959; physical chemistry of high polymers;

Polymers Division Author: 2.23

Grahner, Ludwig H. : Ph.D. Columhia Univ. 1950; semiconductors, photoconductivity;

Solid State Physics Section, Inorganic Materials Division

Author: 4.5

Greenspan, Martin: Ultrasonics, mechanics; Sound Section, Mechanics Division

Hall, L. H. : Ph.D. Johns Hopkins Univ., 19^3; crystal structure; now at Florida

Atlantic University Author: 5»8

Haller, Wolfgang K. : Ph.D. Univ. of Vienna, 1950; physical chemistry of glasses;

Glass Section, Inorganic Materials Division Author: 5«10

Hardy, Stephen C : Vapor growth of metal crystals; Crystallization of Metals Section,

Metallurgy Division Author: 2.4

Harmon, George G. ; Solid state physics, surface phenomena and electroluminescence;

Electron Devices Section, Instrumentation Division Author: 4.17

Heydemann, Peter : Ph.D. Univ. of Gottingen, 1958; Physical acoustics; mechanical and

electrical properties of polymers; Pressure Measurements Section, Mechanics

Division Author: 5»11

Hoffman, John P. : Ph.D. Princeton Univ., 1949; dielectrics, nucleation rate of polymer

crystals; Chief, Polymers Division Author: 2.20

Holly, Sylvanus : Crystal growth; Crystal Chemistry Section, Inorganic Material

Division

Horton, Avery T. : Crystal growth, impurity retention; Crystal Chemistry Section,

Inorganic Materials Division Author: 2.14, 2.16

Horton, W. S. : Ph.D. Ohio State University, 1945; chemical kinetics and thermodynamics;

High Temperature Chemistry Section, Inorganic Materials Division

82
IHosier, William R» ; Electronic transport phenomena; Solid State Physics Section,

r Atomic Physics Division Author: 4.6, 4.7

JHoward, Robert E. : Ph.D. Orford UniT., 1959; theoretical physics; Metal Physics

I Section, Metallurgy Division Author: 2,7, 3.6, 3. 11

[Hudson, Ralph P. : Ph.D. Oxford Univ., 1949; low-temperature magnetism. Chief, Heat

I Division

JHyman, A. : Ph.D. Rutgers, 1964; physical chemistry; Crystallography Section, Inorganic

i Materials Division Author: 5»2

'ishihara, S. : Calorimetry, high temperature heat measurements; Heat Measurement Section

; Heat Division Author: 4.9

lives, Lewis K. : Electron microscopy; Lattice Defects and Microstructures Section,

I Metallurgy Division

' Author: 3.3, 3,5

[ Jackson, Ronald ¥. : Ph.D. Univ. of Bristol, 1950; thermodynamics of sucrose solutions,

kinetics of growth of sucrose crystals; Crystal Chemistry Section, Inorganic

Materials Division Author: 2.10

Kaeser, Rohert S.i Low temperature magnetism, cryogenics; Cryogenic Physics Section,

I Heat Division

I Kahn, Arnold H. : Ph.D. University of California, 1955; electronic energy levels of

' solids; Solid State Physics Section, Inorganic Materials Division

I Author: 4.3

Keezer, Richard C: Optical properties and physical chemistry of semiconductors; now

at Xerox Corporation, Rochester, New York Author: 4.7

Keller, Richard A. : Ph.D. Univ. of California, I96I; inter- and intramolecular

properties of organic molecules, crystals, and rigid glasses; Physical Chemistry

Division

Khoury, Pred: Ph.D. Leeds Univ., 1956; morphology and crystallization of polymers;

Polymer Physics Section, Polymers Division Author: 2.19

Jenkins, ¥. D. ; High temperature mechanical properties of metals; creep, tensile and

stress-rupture; Engineering Metallurgy Section, Metrology Division

Author: 3.I3

King, R. C: Ph.D. Univ. of Chicago, 1962; fluorine flame calorimetry; Heat Division

Author: 5.12

Klein, Ralph: Ph.D. Univ. of Pittsburgh, 1950; field-emission and low-temperature

chemistry; Chief, Surface Chemistry Section, Physical Chemistry Division

Kokoszka, Gerald P. : Electron-spin resonance studies; Inorganic Materials Division

Author: 4.22

Kruger, Jerome : Ph.D. Univ. of Virginia, 1953; corrosion reactions at metal surfaces;

Corrosion Section, Metalurgy Division Author: 2.8, 3.7, 3.8, 4.8

Lauritzen, J. I., Jr., : Ph.D. California Inst, of Techn., 1955; theoretical physics;

Polymer Division Author: 2.22 • LaYilla, Robert E. : Ph.D. Cornell University, I96O; study of transient phenomena by

diffraction techniques; Crystal Chemistry Section, Inorganic Materials Division

! Author: 4.11

I Levin, Ernest M.: Phase equilibria of oxide systems; Crystallography Section, Inorganic

[ Materials Division Author: 5.9

Lippincott, Ellis R. : Ph.D. Johns Hopkins University, 1947; infrared spectroscopy;

Pressure Group, Inorganic Materials Division

Macedo, P. B. : Ph.D. Catholic University, I963; viscoelastic properties; Glass Section,

Inorganic Materials Division Author: 4.21

Mangum, Billy ¥. ; Ph.D. University of Chicago, I96I; low-temperature magnetism;

Cryogenic Physics Section, Heat Division

Mann, David E. : Ph.D. University of Chicago, 1948; spectroscopy; Chief, Molecular

Spectroscopy Section, Physical Chemistry Division

83
f

MannlnSi J» R» : Ph.D. UniTersity of Illinois, 1958; diffusion in solids; Chief, Metal

Physics Section, Metallurgy Division Author: 3,23

Mante, Alexander J. H. t NATO Fellow (1963-54); thermoelectricity. Solid State Physics - Section, Inorganic Materials Division Author: 4.4

Margoshes, Marvin; Ph.D. Iowa State University, 1953; spectrographic analysis; -ii Spectrochemical Analysis Section, Analytical Chemistry Division ^

Author: 3.22

Marshak, Harvey: Ph.D. Duke University, 1955; nuclear reactions, cryogenics;

Cryogenic Physics Section, Heat Division

Martin, G-. M. : Poljrmer Physics; Polymer Physics Section, Polymer Division

Marvin, Rohert S. : Ph.D. University of Wisconsin, 1949; rheology and polymer physics;

Chief, Rheology Section, Mechanics Division

Marzullo, Sam: Dielectric properties; Physical Properties Section, Inorganic Materials

Division Author: 3.20

Mauer, Floyd A. : Instrumentation for Crystallography; Crystallography Section, Inorganic

Materials Division Author: 5*1

McDaniel, C. L. : Phase equilihria of oxide systems; Crystallographic Section, Inorganic

Materials Division Author: 4.19

McMurdie, Howard P.: Crystallography and chemical phase studies; Chief, Crystallography = Section, Inorganic Materials Division

McIIlsh, Alvin C: Precise density determinations for solid materials; Chief, Metrology • Division

Mehs, Russell ¥. : Ph.D. Ohio State Univ., 1940; nuclear acoustic resonance; Alloy

Physics Section, Metallurgy Division Author: 3. 12

Melmed, Allen J. : Ph.D. Univ. of Pennsylvania, 1958; surface studies hy field emission;

Corrosion Section, Metallurgy Division Author: 2.5, 3*10

Mighell, Alan D. ; Ph.D. Princeton Univ., 19^3; crystal structure; Crystallography

Section, Inorganic Materials Division Author: 5»8

Miller, Paul R. : High-temperature crystal growth, crystal orientation; Crystal

Chemistry Section, Inorganic Materials Division Author: 4.1

Milligan, Dolphus E. : Ph.D. Univ. of California, 1958; molecular spectroscopy;

Molecular Spectroscopy Section, Physical Chemistry Division

Moreno, E. C : Ph.D. Univ. of California, 1957; physical chemistry of calcium phosphates

Dental Research Section, Polymer Division

Morris, Marlene C : Physical chemistry, x-ray diffraction; Crystallography Section,

Inorganic Materials Division; A.S.T.M. Fellowship supported.

Moses, R. L.: Optical properties of high pressure, fracture of solids; Physical

Properties Section, Inorganic Materials Division Author: 4.15

lifewton, Clarence J. : Ph.D. Univ. of Texas, 1952; x-ray crystallography of metals;

Lattice Defects and Micros true ture Section, Metallurgy Division

Author: 3.4

Ophurn, Fielding: Electrochemistry, electrodeposition; Electrolysis and Metal

Deposition Section, Metallurgy Division Author: 2.6, 3. 15

Ondik, Helen M. : Ph.D. Johns Hopkins Univ., 1957; Crystallography, inorganic chemistry;

Crystallography Section, Inorganic Ifeterials Division Author: 5*8

Orem» Theodore H. ; X-ray studies of crystal perfection; Corrosion Section, Metallurgy

Division Author: 2,1

Oser, Hans J. : Ph.D. Univ. of Freihurg, 1957; "boundary value proMems; Applied

Mathematics Division Author: 2.7

Paretzkin, Boris : Study of perfection of single crystals "by x-ray diffraction; Crystal

Chemistry Section, Inorganic Materials Division Author: 3-18, 3.19, 4.12

Parker, Harry S. ; Ceramic engineering; Crystal Chemistry Section, Inorganic Materials

Division Author: 2.9

84
Parker, Robert L. : Ph.D. Univ. of Maryland, I96O; growth of crystals; Chief,

Crystallization of Metals Section, Metalliirgy Division Author: 2.1, 2.2, 2.3,

2.^, 2.7

Passaglia, Elio : Ph.D. UniT. of Pennsylvania, 1955; mechanical relaxation processes

in polymers; Polymer Physics Section, Polymer Division Author: 2.21, 2.22

Payne, Richard E. : Huclear resonance; Solid State Physics Section; Inorganic Materials

Division

Peiser, H. Steffen: Crystallography and crystal chemistry; Chief, Crystal Chemistry

Section, Inorganic Materials Division Author: 3.18, '4-.

2

Perloff, Alvin: Structure analysis; Crystallography Section, Inorganic Materials

Division Author: 5.8

Pfeiffer, Earl R. ; Crystal growth from solution; Cryogenic Physics Section, Heat

Division

Piermarini, Gasper J. ; Radial-distrihution studies, high-pressure x-ray diffraction

studies; Crystallography Section, Inorganic Materials Division

Author: 5.2, ^.k

Plumh, Harmon H. : Ph.D. Northwestern University, 195^; low-temperature thermometry;

Cryogenic Physics Section, Heat Division

Poland, Duncan E. : Ph.D. University of Wisconsin, I963; physical chemistry and transport properties of solids; Solid State Section, Inorganic Materials Division

Pollack, Gerald L. ; Ph.D. California Institute of Technology, 19^2; low-temperature

physics; Crystal Chemistry Section, Inorganic Materials Division

Author: 2.11

Pontius, Paul E.: Accurate measurements of mass volume and density; Chief, Mass and

Volume Section, Metrology Division

Proctor, Thomas M.: Solid state physics; Sound Section, Mechanics Division

Author: 4.16

Rasherry, Stanley D. : Spectrographic analysis; Spectrochemical Analysis Section,

Analytical Chemistry Division Author: 3.22

Read, Susan P. J. : Ph.D. Oxford Univ., 19^3* solid state physics; Temperature Physics

Section, Heat Division

Reilly, M. L.: Low-temperature calorimetry. Heat Division Author: 5*15

Rohhins, Carl R.: Phase-rule equilihria of inorganic systems; Crystallography Section,

Inorganic Materials Division

Roherts, D. Ellis : Crystal growth; Solid State Physics Section, Inorganic Materials

Division Author: 2.17

Rohinson, Henry E. ; Thermal conductivity, measurements on solids at high and low

temperatures; Chief, Heat Transfer Section, Building Research Division

Ross, Caylon S. : lucleation, crystal growth; Polymers Division

Author: 2.23

Roth, Rohert S. : Ph.D. Univ. of Illinois, 1951; x-ray diffraction studies, phase

equilibria; Crystallography Section, Inorganic Materials Division

Author: 5,5, S.9

Ruhin, Rohert J. : Ph.D. Cornell Univ., 1951; theoretical chemical physics; Heat

Division

Ruhin, Sherwin: Electronic engineering; Eningeering Electronics Section, Instrumentation Division Author: 4.13

Reugg, E. C; Mosshauer Spectroscopy; Radiochemical Analysis Section, Analytical

Chemisfct^ Division Author: 3.27

Ruff, Arthur ¥., Jr. : Ph.D. University of Maryland, 19^3; dislocations and etch pits;

Chief, Lattice Defects and Micro structures Section, Metallurgy Division

Author: 3.3, 3*'^, 3*5

Saha, ¥. C : Ph.D. University of Pittsburgh, I96I; low temperature calorimetry; Heat

Division Author: 5 '15

85
S^ylor. Charles P» : Ph.D. Cornell University, 1928; precise characteristics of

compounds, accurate microscopic measurements of optical properties; Analytical

Chemistry Division

Schafft, Harry A. : Semiconductor devices and "breakdown phenomena; Electron Devices

Section, Instrumentation Division Author: 4.17

Schneider, Samuel J. : Phase equilibria of oxide systems and melting-point standards;

Crystallography Section, Inorganic Materials Division Author: 4.19

Schooley, James P.: Ph.D. University of California, 19^1; super-conductivity, low

temperature electrical and magnetic measurements; Cryogenic Physics Section, Heat

Division Author: 4.6

Schoonover, Irl C ; Ph.D. Princeton University, 1933? research administration; N.B.S.

Deputy Director

Schoonover, R. M. : Density determination; Mass and Yolume Section, Metrology Division

Schrihner, Bourdon P. : Analytical applications of optical and z-ray spectroscopy;

Chief, Spectrochemical Analysis Section, Analytical Chemistry Division

Author: 3,22

Simmons, John A. : Ph.D. University of California, 19^1; mathematical physics; Metal

Physics Section, Metallurgy Division Author: 2,7, 3-13

Snodgrass, R. J. : Ph.D. University of Maryland, 19^3; nuclear magnetic resonance in

alloys, electron structure of alloys; Alloy Physics Section, Metallurgy Division

Author: 3.12

Spi.jkerman, J. J. : Ph.D. Johns Hopkins University, 19^2; Mosshauer spectroscopy;

Radiochemical Analysis Section, Analytical Chemistry Division

Author: 3.27, 4.23

Spinner, Sam; Elastic properties of inorganic solids; Physical Properties Section,

Inorganic Materials Division Author: 3.20, 4.14

Soher, A. J. ; Inorganic chemistry; Crystal Chemistry Section, Inorganic l-laterials

Division Author: 2.12

Streever, Ralph L. : Ph.D. Rutgers University, I96O; nuclear magnetic resonance; Magnetic Measurements Section, Electricity Division

Swans on, Howard E. : Physical chemistry, x-ray diffraction; Crystallography Section,

Inorganic Materials Division Author: 5»6

Swart zendruher, Lydon J. : Solid state physics; Electron Devices Section, Instrumentation Division Author: 4.17

Termini, Dominic J» : Nucleation and crystal growth; Analytical Chemistry Division

Thurher, Willis R.: Thermoelectricity; Solid State Physics Section, Inorganic MaterisiL

Division Author: 4.4

Tighe, Nancy J. : Defect studies "by electron microscopy of non-metallic crystals;

Physical Properties Section, Inorganic Materials Division.Author: 3. 17

Torgensen, John L. : Ph.D. Columhia University, 1942; crystal growth from solutions,

impurity retentions, crystal properties; Crystal Chemistry Section, Inorganic

Materials Division Author: 2.10, 2.12, 2.14

Yieth, D. : Electronprohe microanalysis; Lattice Defects and Microstructures Section,

Metallurgy Division Author: 3.I6, 5.I3

Wachtman, John B., Jr. : Ph.D. University of Maryland, I96I; mechanical properties of , crystals; Chirf, Physical Properties Section, Inorganic Materials Division

Author: 3.20, 4.2, 4.14

Wagman, Donald D. : Thermochemistry and chemical thermodynamics; Chief, Thermochemistry.

Section, Physical Chemistry Division

Waring, J. L. : Phase equilibria studies; Crystallography Section, Inorganic Materials

Division Author: 5.5

Wasilik, John H. ; Ph.D. Catholic University, 1956; dielectric constajit and losses,

ultrasonics; Solid State Physics Section, Inorganic Materials Division

Author: 4.18

86
I Weeks, James J» ; Measurements of dielectric properties of polymers, crystallization

; and melting of polymers; Dielectric Section, Electricity Division

i Author: 2,20

j Weir, Charles E> i Infrared spectroscopy and high-pressure physics; Pressure Group,

Inorganic Materials Division Author: 5.3, 5.4

I West. E. P. : Calorimetry, high temperature heat measurements; Heat Measurements

Section, Heat Division Author: 4,9

! Wiederhorn, Sheldon M, ; Ph,D» University of Illinois, I96O; optical properties of

I high pressure, fracture of solids; Physical Properties Section, Inorganic Materials

I Division Author: 4.15

Will, Richard S»: Electron-field emission; Electron Physics Section, Atomic Physics

[ Division

Williams, Rohert S»t Solid state; Crystal Chemistry Section, Inorganic Materials

Division

Willard, ¥. A,: High temperature mechanical properties of metals; creep, teasile and

stress-rupture; Engineering Metallurgy Section, Metallurgy Division

Author: 3,13

Winogradoff, I. : Ph^D. University of Edinlmrgh, 19^5; interaction of radiation with

matter; Electron Devices Section, Instrumentation Division

Author: 4.1?

Yakowitz, H> ; X-ray microdiffraction, electronprohe microanalysis; Lattice Defects

and Microstructures Section, Metallurgy Division Author: 3.16, 5*13

Yolken, Howard T. : Growth of oxide films; Corrosion Section, Metallurgy Division

Author: 3,7, 4.8

Young, J> P. : Electro crystallization, growing single crystals "by electrodeposition;

Electrolysis and Metal Deposition Section, Metallurgy Division

Author: 2.6

Participants at the Boulder Lahoratories

Arp, Tincent D.t Ph.D. University of California, 1959; super-conductivity; Cryogenic

Properties of Solids Section, Cryogenic Engineering Lah oratories

Bam"berger, Edwin C: Dielectric measurements; Radio and Microwave Materials Section,

Radio Standards Physics Division

Bussey, Howard E. ; Ph.D. Univ. of Colorado, I964; magnetism and ferrites; Radio and

Microwave Materials Section, Radio Standards Physics Division

Cook, Alan R. : Physical instrumentation; Radio and Microwave Materials Section,

Radio Standards Physics Division Author: 3»26

Dalke, John L. : Characterization of materials at radio frequencies; Chief, Radio

and Microwave Materials Section, Radio Standards Physics Division

Gruzensky, Paul M. : Ph.D. Oregon State University, I96O; ultra pure materials and

crystal growth; Radio and Microwave Materials Section, Radio Standards Physics

Division Author: 2.24

Guntner, Charles S.: Imperfections, flow and fracture, phase transformations;

Properties of Materials Section, Cryogenic Engineering Laboratories

Jefferson, Clinton E. : Ph.D. University of Michigan, 1959; solid solution for

ferrimagnetic characteristics; Radio and Microwave Materials Section, Radio

Standards Physics Division

Mahler. Rohert J.; Ph.D. Univ. of Colorado, I963; solid state physics relating to MR

and phonon interactions; Radio and Microwave Materials Section, Radio Standards

Physics Division

Matarrese. Lawrence M. : Ph.D. University of Chicago, 195^; solid state physics, EPR

resonance spectroscopy related to solid state mechanisms; Radio and Microwave

Materials Section, Radio Standards Physics Division Author: 3.26

87
I

Peterson, Ro"bert L. ; Ph.D. Lehigh UniTersity, 1959; theoretical physics; Ea4.io and

Microwave Materials Section, Radio Standards Physics Division

Author: 3.26

Powellt Rohert L.: Thermal and electrical conduction of metals at low temperatures;

Properties of Materials Section, Cryogenic Engineering Lahoratory.

Reed, Richard P.; Imperfections, flow and fracture, phase transformations; Properties

of Materials Section, Cryogenic Engineering Lahoratory

Risley, Allan S.; Magnetism and ferrites; Radio and Microwave Materials Section,

Radio Standard Physics Division

Wells, Joseph S. ; Ph.D. Univ. of Colorado, 196^; microwave physics, solid state physics

relating to EPR and APMR, Radio and Microwave Materials Section, Radio Standards

Physics Division Author: 3.26

Winder, Dale, R.: Ph.D. Case Institute of Technology, 1957; solid state physics;

Radio and Microwave Materials Section, Radio Standards Physics Division

88
7. LITERATURE REFHIMCES

Barl)er, D. J., (1964); Electron Microscopy and Diffraction of AlimimM Oxide Whiskers;

Phil. Mag. 10, 15'

Barher, D. J. and Earahau^, E. N.« (19^5); Dislocation and Stacking Faults in Rutile

Crystals Grovm "by Flame-Fusion Method; J. Appl. Phy., (accepted).

Barher, D. J. and Tighe, N. J., (19^5); Electron Microscopy and DiffracUon of Corundum

\ Crystals Grown hy the Terneuil Process. I. Pure Aluminum Oxide; Phil. Mag., March.

Becker, J. H. and Hosier, W. R. , (19^5); Multiple-Band Conduction in n-Type Rutile

(TiO?); Phys. Rev., 137, A18?2.

Block, S. and Piermarini, C. J. , (1964); Alkaline-earth Cation Distrilmtions in Vitreous

Borates; Physics and Chemistry of Glasses, ^ I38.

Blunt, R. F. and Cohen, M. I., (1964a); Irradiation Induced Color Centers in Magnesium

Fluoride; Bull. Am. Phys. Soc. % 643.

Blunt, R. F. and Cohen, M. I. , (196413); Irradiation Induced Color Centers in Magnesium

Fluoride; KBS Report 8614.

Boswarva, M. and Franklin, A. P. , (I965); Orientation Polarization of Defect Pairs in

Crystals; Phil. Mag., 11, 335.

Brover, W. S. and Farahaugh, E. K., (I965); Etch Pits in Chromic Oxide; J. Appl. Phys.,

April.

Burley, G., (1964a); X-ray Investigation of Strain in Cold-Worked Silver Iodide; J. Res.

EBS 68A, 4 355-8.

Burley, G., (l964l3); Ice Nucleation hy Photolyzed Silver Iodide; Phil. Mag. 10, 527-534.

Chang, T., (1964); Electron Spin Resonsance of Mo+5 in Rutile; Phys. Rev. 1^6, 1413.

Coriell, S. R. and Parker, R. L. , (1965); Stability of the Shape of a Solid Cylinder

Growing in a Diffusion Field; J. Appl. Phys.

^

2 632-37.

Deslattes, R. P., Torgesen, J. L., Partezkin, B., and Horton, A. T., (I964);

Preliminary Studies on the Characterization of Solution-Grown ADP Crystals; presented

at the 13th Annual Conf . on Applications of X-Ray Analysis; Penver, Colorado, August,

1964; in press in Advances in X-Ray Analysis, Vol. 9, Plenium Press, New York.

deWit, R. and Howard, H. E. , (I965); Relation of the Stacking Fault Energy to

Segregation at Stacking Faults and to the Occurrence of Phase Boundaries in FCC

Binary Alloys; Acta Met., (accepted).

Eljy, R. K.. (1964); An Example of a Lamellar Copolymer; J. Res. Nat. Bur. Stds. 68A. , (3)

Eljy, R. K.. (1963); First Order Transition Temperatures in Crystalline Polymers; J. Appl. Phys. -^ 2hWl,

Franklin, A. P.. (I965); Energy of Formation of the Anion Frenkel Pair in Calcium

Fluoride; J. Phys, Chem. Solids, (accepted).

. 89
Franklin, A. D., Shor"b, A.« and Wachtman, J. B., Jr., (1964); Relaxation Modes of

Trapped Crystal Point Defects: the Three-Eei^'bor Shells Model in NaCl; J. Res. NBS

68A, 425. )

French, J. C , (1964); Bihliography on the Measurement of Bulk ResistiTity of Semiconductor Materials for Electron Devices; Natl. Bur. Std. Technical Note 232. J

Furukawa, G. T. and Saha, W. G., (I965); Heat Capacity and Thermodynamic Properties

of Beryllium Aluminate (Chrysoheryl) , BeO'A^pOQ, from I6 to 38OOK; J. Res. HBS 69k.

(1), 13-18.

Furukawa, C. T., Reilly, M. L., and Piccirelli, J. H., (1964); Heat Capacity of

Potassium Borohydride (KBH/j.) from 15 to 375"K. Thermodynamic Properties from to 700°K; J. Res. KBS 68A, (6) 65I-649.

Grahner, L. H. , (1965); Optical Quenching of Photoconductivity near the Band Edge in

CdS; Phys. Res. Ltr., ( submitted).

Haller, ¥., (1965); Rearrangement Kinetics of the Liquid/Liquid Immiscihle Microphases

in Alkalitorosilicate Melts;' J. Chem. Phys. _^, 2 686-93.

Howard, R. E., (196^); Random Walk Calculations of Diffusion Coefficients; Proc. Fifth

International Symposium on the Reactivity of Solids, Munich, (in press).

Howard, R. E. and Lidiard, A. B., (I965); Thermal Diffusion of Substitutional Impurities i in Metals; Acta Met., (in press).

Howard, R. E. and Lidiard, A. B. , (19^4); Reports on Progress in Physics, 22., I6I.

Kruger, Jerome and Calvert, Joan P., (19^4); The Oxide Films Formed on Copper Single

Crystal Surfaces in Water. III. Effect of Light; J. Electrochem. Soc. Ill , IO38.

Kruger, Jerome and Yolken, H. T., (19^4); Room Temperature Oxidation of Iron at Low

Pressures; Corrosion 20, 29t.

Levin, E. M. and McDani e l, C. L., (19^5); Heats of Transformation in Bismuth Oxide hy

Differential Thermal Analysis; J. Res. NBS 69A , (accepted).

Levin, E. M., Rohhins, C. R., and Mcl-hirdie, H. F. . (I964); Phase Diagrams for Ceramists;

The Amer. Ceram. Soc, Columhus, Ohio.

Macedo, P. B., Capps, W., and Wachtman, J. B., Jr.. (I964); Elastic Constants of Single

Crystal Th02 at 25OC; J. Am. Ceram. Soc, 42_, 65I.

Macedo, P. B . and Litowitz, T. A. , (1965); Ultrasonic Relaxation in Molten Boron

Trioxide; Physics and Chemistry of Glasses, Vol. 6_, (accepted).

Manning, J. R. , (I964); Correlation Factors for Impurity Diffusion, hoc. Diamond, and

fee Structures; Phys. Rev., I36 , A1758.

Dghurn, F., Bechtoldt , C, Morris, J. B.. and deKoranyi, A. , (I965); Structure of

Electrodeposited Lead Dendrites; J. Electrochem. Soc, (accepted).

90
bndlk, H. M. , (I965); The Structures of Anhydrous Sodium Trimetaphosphate, 'SajP^O^f and

the Monohydrate, Na3P309'H20; Acta Cryst. 18, 226.

lOndik, H. M., (1964); The Structure of the Triclinic Form of Sodium Tetrametaphosphate

Tetrahydrate; Acta Cryst. l^j 1139.

aretzkln, B. and Pelser, H. Steffen, (19^); High-Toltage Laue X-ray Photography of

Large Single Crystals; Science 146, 26O-261.

Pollack, G. L. and Parahaugh, E. N.

,

(I965); Crystal Growth and Thermal Etching of Argon;

J. Appl. Phys., ^513.

Reher, J. M., (1964); Potential Distrihution in a' Rectangular Semiconductor Bar for use with Pour-Point Prohe Measurments; Solid-State Electron. 2.* 525* (See also

Erratum, Solid-State Electron. 2j 945.).

Eoth, R. S. and Wadsley, A. D. (1965); Mixed Oxides of Titanium and Niohium; The

Crystal Structure of T!iWhzk'^6z (Ti02'12Kh205); Acta Cryst., (accepted).

Both, R. S » « Wadsley« A. P., and Anderson, S . (I965); The Crystal Structure of

Pffb9025(P205* 911)205); Acta Cryst., (accepted)

.

Schneider, S. J., Waring, J. L., and Tressler, R. E., (I965); Phase Relations hetween

Iridium and the Sesquioxides in Air; J. Res. KBS 69A, (accepted).

Spinner, S. and ¥achtman. J. B., Jr., (1964); Some Elastic Compliances of Single Crystal

Rutile from 25° to 1000^0; J. Res. BBS 68A, 669.

Torgesen. J. L. and Strasshurger, J., (1964); Growth of Oxalic Acid Single Crystals from

Solution; Solvent Effects on Crystal Hahit; Science 146, 53-55.

Wachtman, J. B., Jr., and Doyle, L. R., (I964); Internal Priction in Rutile Containing

Point Defects, Phys. Rev. 135, A276.

Wachtman. J. B., Jr. and Peiser, H. S., (I965); Splitting of a Set of Equivalent Sites

in Centrosymmetric Space Groups into Suhsets under Homogeneous Stress; J. Res. lilBS 69A.

Waring. J. L. and Roth, R. S., (1965); Phase Equilihria in the System Yanadium OxideMohi-um Oxide; J. Res« IBS 69A, 2, March-April.

Waring, J. L. and Schneider, S. J., (I965); Phase Enuilihrixim Relationships in the

System Gd203 - Ti02; J. Res. KBS 69A, (accepted).

Wasilik. J. H. and Wheat. M. L. . (I965); Elastic Constants of Lead Fluoride at Room

Temperature; J. Appl. Phys., March

.

Weeks, J. J. and Hoffman, J. D. , (I965); X-Ray Study of Isothermal Thickening of

B^ellae in Bulk Polyethylene of the Crystallization Temperature; J. Chem. Phys.,

(accepted).

91
Wiederhorn, S. M., (1964); Fracture Surface Energy of Soda-Lime Glass; to "be pulilished

in Proc. of the Conf . on Role of Grain Boundaries and Surfaces in Ceramics, held at

North Carolina State of the Univ. of North Carolina, Raleigh , Not. 16-I8.

West. E. D. and Ishihara, S. , (I965); A Calorimetric Determination of the Enthalpy of

Graphite from 1200 to 26OOOK, Third Symposium on Thermdphysical Properties; Am. Soc.

Mech. Engrs.

Yakowitz, H., (I965); Precision of Cuhic Lattice Parameter Measxirements "by the Kossel

Technique; Proc. Symposium Electron Prohe Microanal., Wash., D. C, J. Wiley and Sons,

Puhlishers (In press).

Yakowitz, G. P., Ganow« H., Oglivie, R. E. , (19^5) : Evaluation of Kossel Microdiffractioi|

Procedures: The Cuhic Case; J. Appl. Phys. _2i> (3)» (in press).

Yolken, H. T. and Kniger, J. . (19^5); Optical Constants of Iron in the Yisitle Region;

J. of Opt. Soc. of Amer., (accepted).

92

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