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TECHNICAL NOTE

445

A Bibliography on Methods

For the Measurement of

inhomogeneities in Semiconductors

(1953-1967)

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U.S. DEPARTMENT OF COMMERCE

National Bureau of Standards

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THE NATIONAL BUREAU OF STANDARDS

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UNITED STATES DEPARTMENT OF COMMERCE

C. R. Smith, Secretary

NATIONAL BUREAU OF STANDARDS • A. V. Astin, Director

NBS TECHNICAL NOTE 445

ISSUED MAY 1968

A Bibliography on Methods

for the Measurement of

Inhomogeneities in Semiconductors

(1953-1967)

Harry A. Schafft

and Susan Gayle Needham

Electronic Instrumentation Division

Institute for Applied Technology

National Bureau of Standards

Washington, D.C. 20234

NBS Technical Notes are designed to supplement the Bureau's regular publications program. They provide a means for making available scientific data that are of transient or limited interest. Technical Notes may be

listed or referred to in the open literature.

For sale by the Superintendent of Documents, Government Printing Office

Washington, D.C, 20402 - Price 35 cents
TABLE OF CONTENTS

Page

1. INTRODUCTION --- 1

2. ORGANIZATION AND USE OF THE BIBLIOGRAPHY 3

3. INDEX ACCORDING TO KEY WORDS - ---- 6

4. INDEX TO AUTHORS - --- 11

5. INDEX ACCORDING TO METHODS OR EFFECTS USED TO DETECT

INHOMOGENE IT I ES - -- 15

6. BIBLIOGRAPHY -- --- 20

II
A BIBLIOGRAPHY ON METHODS FOR THE MEASUREMENT

OF INHOMOGENEITIES IN SEMICONDUCTORS (1953-1967)

Harry A. Schafft

Susan Gayle Needham

About 130 papers which deal with the measurement

techniques useful in detecting the type and location

of various inhomogeneities, primarily in germanium

and silicon, are listed with key words. The types

of inhomogeneities considered are those in impurity

concentration, resistivity, mobility, diffusion

length, lifetime, surface conditions, crystal perfection, and p-n junctions. Some of the twenty-two

effects or methods used to detect these inhomogeneities

are: photovoltaic, electron-voltaic, photoconductivity,

one-, two- and four-point probe, spreading resistance,

and voltage breakdown. There are three indexes: a reference tabulation according to key words, a refer- ence tabulation according to methods or effects used

to detect an inhomogeneity , and an author index.

Key Words: bibliography; semiconductor material

inhomogeneities; measurement methods:

photovoltaic, electron voltaic, photoconductivity, point potential probe,

spreading resistance, voltage breakdown.

1. INTRODUCTION

Inhomogeneities in semiconductors cause many diverse problems

in the measurement of transport properties and in the fabrication,

operation, and reliability of semiconductor devices. Troublesome inhomogeneities include variations in the distribution of

impurities; clusters of impurities, voids, second phase precipitates, and clusters of crystal defects such as dislocations,

lineage, or strain fields.

Among the transport properties affected are the resistivity,

lifetime, and mobility. These appear to be most affected by

nonuniform impurity distributions, including clusters. In

fabrication, both solid-state diffusion and alloying steps are affected by the presence of voids or clusters of crystal defects.

As a result, poor junction geometry and nonuniform current distributions frequently appear in devices fabricated from inhomogeneous

material. These faults often lead to such causes of failure as hot spots, thermal runaway, and second breakdown. Anomalous

diffusion of impurities along crystal defects may also occur

during operation of devices at high power. In addition, gross

variations in properties over a slice often causes wide variations in device characteristics and poor yields. This problem is particularly serious in large area power devices and

large scale integrated circuits.
One crucial aspect of the general problem of inhomogeneities

in semiconductors is the detection and location of these inhomogeneities. This is the subject of the bibliography, which is the

result of a literature survey of measurement techniques useful in

detecting the type and location of various inhomogeneities, primarily in germanium and silicon. The sources used in this survey

were: personal files, subject indexes of Science Abstracts

since 1960, literature citations in papers collected, and journal

issues not yet abstracted. To keep within the bounds of manageability without sacrificing utility, the size of the bibliography

was limited by applying three sets of boundary conditions. These

boundary conditions determined the kinds of inhomogeneities con- sidered, the kinds of measurement techniques described, and the

intent of the paper.

The following types of crystal inhomogeneities were selected

because of their relevance to the electrical properties of

semiconductor devices:

1. Resistivity

2. Impurity concentration

3. Diffusion length

4. Lifetime

5. Surface recombination velocity

6. Surface conditions (inversion layers, surface states, etc.)

7. Mobility

8. Crystal perfection

9. Junction conditions (doping profile, physical location or

extent)

.

The 22 techniques listed below are included in the bibliography.

The first 16 of these, which involve electrical and optical interactions, are emphasized. An effort was made to obtain complete

coverage of the literature dealing with these techniques. A

few representative papers describing the remaining techniques

are also included.

1. Photovoltaic

2. Surface photovoltage

3. Electron-voltaic

4. Photoconductivity

5. Two- and one-point probe

6. Four-point probe

7. Spreading resistance

8. Voltage breakdown

9. Internal injection-extraction
10. Capacitance vs voltage

11. Impedance

12. Reflectivity (plasma edge)

13. Absorption

14. Refractive index

15. Birefringence

16. Microwave diode

17. Neutron activation

18. Radioactive tracer

19. Electron microprobe analysis

20. Light microprobe analysis

21. X-ray topography

22. Electrochemical analysis (etching and electroplating).

With regard to the intent of the paper, only those papers

were included which dealt directly with one of the listed

measurement techniques even though the use of the technique

may not have been the major subject of the paper. Those papers

which describe results of measurements that can be affected

by inhomogeneities were usually excluded.

2. ORGANIZATION AND USE OF THE BIBLIOGRAPHY

Each paper has been given an identification code which consists

of a sequence of two digits, a letter, and another digit. The

first two digits indicate the year of publication and the letter

is the initial of the first author's surname. The last digit is

used to distinguish those papers which would otherwise have the same code. No rule was used in the assignment of the last digit.

Five major topic headings, each divided into sub-topics and

assigned key words, are used to indicate the contents and the

approach of each paper. The major topic headings are: (1) the

type of inhomogeneity considered, (2) the material examined, (3)

the method used or effect measured to detect the inhomogeneity,

(4) the special techniques used, and (5) the type of paper. These

topics and key words (in capital letters) are listed in the

Index According to Key Words. Also included is a tabulation of

codes by the appropriate key words

.

The papers in the bibliography are arranged according to their

codes. The codes are grouped first by year, then in alphabetical

order by letter, and then in numerical order by the last digit.

Appropriate key words of each topic are arranged in a column

just below each reference in order of their listing in the first

index.
Of the papers which deal with a given measurement technique

to detect a particular type of inhomogeneity , there are some which are sufficiently important that they should be given

special attention. The key word for the measurement technique

in each of these papers has been bracketed in the bibliography.

The codes for these papers have also been underlined in the

Index According to Methods or Effects Used to Detect Inhomogeneities

.

Each reference citation in the bibliography is followed by

an abstract identification code, in parenthesis, if one was available. The code begins with either PA, EA, or CA to indicate that the abstract may be found in Series A, Physics , of

Science Abstracts , Series B , Electrical and Electronics (formerly

Electrical Engineering ) of Science Abstracts , or Chemical Abstracts , respectively. Following these letters are two digits which indicate the year the paper was abstracted if it appears in Science

Abstracts or the volume in which the abstract may be found in

Chemical Abstracts . The remaining code is the one assigned by

the abstracting journal

.

If the reference citation is followed by a number preceded

by the letters AD then the paper may be obtained from the

Clearinghouse for Federal Scientific and Technical Information,

Department of Commerce, Sills Building, 5285 Port Royal Road,

Springfield, Virginia 22151, by using the AD number.

Journal abbreviations follow those of Science Abstracts . One

exception was made in the case of publications of the Institute

of Electrical and Electronics Engineers, which is abbreviated

IEEE. For those publications which are not listed no abbreviations

were made where confusion might arise.
ACKNOWLEDGMENT

The authors wish to thank Dr. W. Murray Bullis

for his generous encouragement and valuable guidance

throughout the preparation of the bibliography and for

the use of his extensive personal files of papers. The

personal files of papers on X-ray topography techniques

and on electron microprobe analysis techniques which

Dr. Richard Deslattes and Dr. Kurt Heinrich, respectively, made available were very useful. The secre- tarial assistance of Miss Juanita Seal was of con- siderable help in the final stages of the preparation

of the bibliography. The final draft was expeditiously

typed by Mrs. Gail Crum.

This work was supported by the Rome Air Development Center, U. S. Air Force, under contract F30602-67-C-0105

.
3. INDEX ACCORDING TO KEY WORDS

I . Type of Inhomogeneity

1. RESISTIVITY

55T1, 56F1, 56H1, 56T1, 57T1, 58B1, 58R1, 58S1, 59D1, 5901

59Z1, 60B1, 60B2, 60C1, 60H3, 60L1, 60O1, 60S1, 61B2, 61K1

61S1, 61T1, 61V1, 62B1, 62K1, 63C1, 63G1, 63H1, 63K2, 63L2

63P1, 63S2, 63T1, 64A1, 64B1, 64B2, 64D1, 6411, 64L2, 64S1

64S2, 65B1, 65G2, 6511, 65M1, 65M2, 65M3, 6 5M4, 65M5, 65P1

65S2, 65W2, 65W3, 66A2, 66B1, 66G1, 66M1, 66M2, 66M3, 66M4

66S1, 66Z2, 67A3, 67D1, 67H1, 67L1, 67M1

2. IMPURITY CONCENTRATION

53B1, 60H1, 61A1, 61B1

,

63K1, 64K1, 65A1, 65G3,

67C2, 67D3, 67F1

61T1, 62E1, 62H1, 6211, 62P1 , 62T1,

65Z1, 66A2, 66D1, 66L1, 66N1 , 66W1

,

3. DIFFUSION LENGTH

61G1, 63S1, 64M4, 66C2

4. LIFETIME

54A1, 56H1, 60S1, 61R1, 62T2, 63W1, 64B1, 66B1, 67E1

5. SURFACE RECOMBINATION VELOCITY

60S1

6. SURFACE (inversion layers, surface states, etc.)

63L1, 65H1, 65W1, 66E1 , 66N1, 66Z1 , 67H2, 67P1, 67T1, 67T2

7. MOBILITY

54A1

62P1, 62W1, 63L1, 64B2, 64F1,

66C1, 66C2, 6601, 66H1, 66J1,

67B1, 67C1, 67D2, 67J1

8. CRYSTAL PERFECTION

53B1, 59L1, 59L2, 62H1

,

6211,

64L1, 64M1, 65C1, 65G3, 65S1,

66L1, 66L2, 66N1, 67A1, 67A2,

9. JUNCTION (doping profile, physical location or extent)

60H2, 61B1, 62H1, 6211, 62P1, 62S1, 63K2, 63M1, 65G1, 65G3,

66A1, 66E1, 66M4, 66N1

,

67D3, 67F1, 67L1
II. Material

1. Ge

53B1, 54A1, 55T1, 56F1, 56H1, 56T1, 57T1, 58B1 , 58R1, 59D1,

59L1, 5901, 60B1, 60C1, 60H1, 60H2, 6001, 60S1 , 61B2, 61R1,

61S1, 62B1, 62H1, 62K1, 62P1, 62S1, 62T2

,

63H1, 63L2, 63M1,

63S1, 63W1, 6411, 64L1, 65B1, 65G3, 6511, 65M1 , 65M2, 65M3,

65M4, 66A2, 66B1, 66C1

,

66M1, 66M2, 66M3, 67E1, 67H1

Si

54A1, 56H1, 58R1, 59L1, 59L2, 60L1, 61K1, 61S1

62P1, 62S1, 62T1, 63G1, 63G2

,

63K2, 63L1, 63M1

63T1, 63W1, 64B1, 64D1

,

64F1, 64K1, 64L1, 64M1

65B1, 65C1, 65G1, 65G2, 65H1, 6511, 65M5, 65S1

65W2, 66A1, 66A2, 66B1

,

66C1, 66C2, 66E1, 66G1

66L2, 66M4, 66N1, 66Z1, 67C1, 67D3, 67D2, 67E1

67M1, 67P1, 67T1, 67T2

61T1, 62H1,

63S1, 63S2,

64S1, 65A1,

65S2, 65W1,

66J1, 66L1,

67H2, 67J1,

3. GaAs

61G1, 62H1, 63K1, 65G3, 65Z1, 66D1, 66H1 , 66L2 , 66W1 , 67C2,

67D1, 67F1, 67L1

4. InSb

61A1, 62H1, 64B2, 65G3

5. InAs

62E1, 62H1

6. GaP

66C2, 66H1

7. GaAs-InAs, Ge-Si

66H1

III. Method or Effect Used

1. PHOTOVOLTAIC

55T1, 56F1, 56T1, 57T1, 5901, 59Z1, 60B5, 60C1 , 6001, 60S1,

61S1, 62K1, 63P1, 63S1, 64B2 , 65M4, 65P1 , 66B1, 66S1 , 67E1

2. SURFACE PHOTOVOLTAGE

61G1

3. ELECTRON-VOLTAIC

65M2, 65M3, 66M1 , 66M2
4. PHOTOCONDUCTIVITY

56H1, 60B2, 61R1, 62T2, 63S1, 63W1, 64B2, 65M1 , 66B1, 66G1

5. TWO-POINT (probe and one-point probe)

58B1, 58R1, 60L1, 61B2, 63L2, 6411, 6511, 67A3, 67D1, 67L1

t d \ ci

,

6. FOUR-POINT (probe)

58R1, 58S1, 59D1, 60B1 , 60H3, 60L1, 61K1, 61T1 , 61V1, 63C1,

63H1, 63S2, 63T1, 64A1, 64D1, 64S1 , 64S2, 65S2, 65W2 , 66Z2,

67A3

7. SPREADING RESISTANCE

62B1, 63G1, 63S2, 66M4, 67F1, 67M1

8. VOLTAGE BREAKDOWN

63G1, 63S2, 64B1, 64D1, 65G2 , 66A2

9. INTERNAL INJECT I ON -EXTRACT I ON

60H1

10. C VS V (capacitance vs voltage)

60H2, 61B1, 62T1, 63M1, 64K1, 65G1, 65W1, 66A1 , 66Z1, 67D3

11. IMPEDANCE

56H1, 59R1, 64L2, 65B1 , 67H1

12. REFLECTIVITY (plasma edge)

62E1, 63K1

13. ABSORPTION

60H1, 65M5, 65Z1

14. REFRACTIVE INDEX

66D1

15. BIREFRINGENCE

59L2
16. MICROWAVE DIODE

63K2

17. NEUTRON ACTIVATION

61T1, 65A1

18. RADIOACTIVE TRACER

53B1, 61A1

19. ELECTRON MICROPROBE (analysis)

62S1, 63L1, 65C1, 65W3, 66C1, 66C2, 66E1 , 66L1 , 66M3, 66N1,

66W1, 67C2, 67T1

20. LIGHT MICROPROBE (analysis)

54A1, 65H1, 67H2, 67P1, 67T2

21. X-RAY TOPOGRAPHY

59L1, 62W1, 64F1, 64L1, 64M1, 65S1, 66H1, 66J1 , 66L1 , 66L2,

67A1, 67A2, 67B1, 67C1, 67D2, 67J1

22. ELECTROCHEMICAL (etching, electroplating)

62H1, 6211, 62P1, 63L2, 65G3

IV. Techniques

1. SURFACE PREPARATION

60L1, 64M1, 65G3, 65W2 , 66L1

2. CONTACTS

64K1, 67F1

3. APPARATUS

54A1, 56F1, 56H1, 58R1, 59D1, 59L2, 60B1, 60C1, 6001, 61G1,

61S1, 62K1, 63M1, 63T2, 63W1, 64B2, 64D1, 64F1, 6411, 64K1,

64M1, 64S1, 65B1, 65G2, 65H1, 6511, 65M4, 65S1, 65S2

,

65W3,

66B1, 66D1, 66E1, 66L1, 66L2, 66M4, 66Z1, 66Z2, 67C1, 67C2,

67D1, 67H1, 67H2, 67L1, 67P1, 67T2

4. FABRICATION

62T1, 64K1
5. GENERAL PROCEDURES

61T1, 62H1, 67A2, 67A3

V. Type of Paper

1. THEORETICAL

55T1, 58S1, 59Z1, 60C1, 60H3, 60L1, 61B1, 61V1, 63C1, 63H1,

63P1, 64A1, 64L2, 64S2

,

66M2, 66S1

2. EXPERIMENTAL

53B1, 56H1, 56T1, 59D1, 59L2, 5901, 60B1, 6001, 61A1, 61G1,

62B1, 62K1, 62S1, 63K1, 63K2, 63L1, 63L2, 64B2, 64D1 , 64F1,

6411, 64K1, 64M1, 65A1, 65B1

,

65C1, 6511, 65M2, 65M3, 65M4,

65M5, 65Z1, 66C1, 66E1, 66H1, 66J1

,

66L1, 66L2, 66M1 , 66M4

,

66N1, 66Z1, 66Z2, 67C1, 67D1, 67D2, 67H1, 67H2, 67L1, 67M1,

67P1, 67T1, 67T2

3. EXPERIMENTAL ANALYSIS

54A1, 56F1, 58B1, 58R1, 59L1, 60B2, 60H1, 60H2, 60S1, 61B2,

61K1, 61R1, 61S1, 61T1, 62E1, 62T1, 62T2, 63G1, 63M1, 63S1,

63S2, 63T1, 63W1, 64B1

,

64S1

,

65G1, 65G2, 65H1, 65M1, 65P1

,

65S1, 65S2, 65W1, 65W2, 65W3, 66A1, 66A2 , 66B1, 66C2 , 66D1

,

66G1, 66M3, 66W1, 67A3, 67C2, 67D3, 67E1, 67F1, 67J1

4. REVIEW

57T1, 62H1, 6211, 62P1, 62W1, 64L1

,

65G3, 67A1, 67A2, 67B1

10
4. INDEX TO AUTHORS

Abe, T., 65A1

Adam, G. , 54A1

Adler, R. B., 65G1

Albert, M. P., 6eCl, 64A1

Allen, C. C, 66A2

Allred, W. P., 61A1

Antonov, A. S., 66A1

American Society for Testing

and Materials, 6 7A2

Austerman, S. B., 67A3

Authier, A. , 67A1

Azim, S. A., 67F1

B

Baev, I. A., 64B2, 66B1

Baranskii, P. I., 58B1,

60B2, 61B2

Bate, R. T., 61A1

Berglund, C. N., 66B2

Berkova, A. V. , 65M5

Biard, J. R., 62B1

Biet, J. P., 61B1

Bonse, U. K., 67B1

Brice, J. C, 60B1

Brock, G. E., 59D1

Brownson, J., 64B1

Bryant, C. A., 65B1

Buck, T. M., 63L1

Burton, J. A., 53B1

Bush, H. D., 66Z2

Carron, G. J., 6 7C1

Casey, H. C. Jr. , 67C2

Chernopisskii , V. U. , 6411

Clevenger, L. H., 66A2

Combs, J. F., 63C1, 64A1

Cox, C. D., 60C1

Czaja, W., 65C1, 66C1, 66C2

D

Decker, D. R. , 67D3

Deslattes, R. D., 66L2

Dew-Hughes, D. , 59D1

Dickey, D. H. , 66M4

Dilatush, E. , 67D1

Dionne, G., 6 7D2

Dobbs, P. J. H. , 64D1

Dobrott, R. D., 66H1

Drougard, M. E. , 66D1

EEdwards, D. F. , 62E1

Epstein, A. S. , 64K1

Esposito, R. M., 67E1

Everhart, T. E. , 66E1

FFassett, J. R. , 66Z2

Fiermans , L. , 64F1

Flicker, H., 67E1

Frank, H., 56F1, 67F1

11
Hughes, K. A., 67T1

Gallas, M., 66G1

Gardner, E. E., 63G1, 65G2,

65S2

Gatos, H. C, 65G3

Gergely, Gy., 62G1

Gold, R. D., 60H2

Goodman, A. M. , 61G1

Gray, P. E., 65G1

Grishina, S. P., 65M5

Guldbrandsen, T., 63M1

Gunn, J. B., 65B1

Gupta, D. C, 66A2

H

Haberer, J. R. , 67H2

Hagon, P. J., 66N1

Haisty, R. W. , 67H1

Hallenback, J. F. Jr., 63G1,

63S2

Hansen, E. B., 60H3

Hantay, 0., 62G1

Harrick, N. J., 60H1

Hart, M., 67B1

Henisch, H. K., 56H1

Henkel, H.-J., 65Z1

Hilibrand, J., 60H2

Holmes, P. J., 62H1

Hooper, W. W. , 65H1

Hora, H., 63H1

Hornung, H., 62T2

Howard, J. K., 66H1

Htin Kyaw, 67T1

Iglitsyn, M. I. , 6411, 6511

Irving, B. A., 6211

Ivanov, A. V., 6511

J

Jones, A. H., 59D1

Juleff, E. M. , 66J1, 67J1

KKahng, D. , 62T1

Kaiser, R. H. , 67C2

Karagioz, 0. V., 6511

Klein, M. A. , 63K2

Kokorev, D. T., 62K1

Kolb, E. D. , 53B1

Komukhaev, E. I., 58B1

Kopestansky, J., 66G1

Kovacs, F. S. , 64D1, 64K1

Kovtonyuk, N. F. , 62K1

Kressel, H., 63K2

Ksoll, G., 61K1

Kudman, I . , 63K1

Kyslik, V., 66G1

LLaakso, C. W. , 66N1

Lamorte, M. F. , 60L1

Lander, J. J. , 63L1

Lang, A. R. , 59L1, 64L1

Lapierre, III, A. G. , 66J1,

67J1

12
Lavine , M. C. , 65G3

Layer, H. P., 66L2

Lederhandler, S. R., 59L2

Lehner, H. H., 67L1

Levinson, D. I., 6411

Levinzon, D. I., 6511

Locherer, K.-H., 64L2

Loferski, J. J. , 67E1

Lorinczy, A. , 63L2

Lublin, P., 66L1

M

Ma, C. H., 64M1

Maker, P. D., 62E1

Makris, J. S., 64M1

Malyutenko, V. K., 65M1

Many, A., 5901, 6001

Manz, R. C, 62T1

Markowska, E., 65M4

Mathews, J. R. , 63L1

Mazur, R. G., 66M4, 67M1

Meier, A. A., 6511

Meyer, N. I., 63M1

Millward, C, 67T1

Mil'vidskii, M. G., 65M5

Munakata, C, 65M2, 65M3, 65W3,

66M1, 66M2, 66M3

N

Nealey, C. C, 66N1

Nemeth, T., 63L2

Newkirk, J. B., 67A3, 67B1

0i, N. , 65A1

Oroshnik, J., 5901, 6001

PPankove, J. I., 62P1

Pasztor, G., 67T2

Pataki, G., 63P1

Patel, J. R., 65C1

Pereverzev, N. A., 62S1

Piotrowski, K., 65P1

Potter, C. N. , 67P1

R

Rashba, E. I., 61R1

Romanov, V. A., 61R1

Romanov, V. 0., 65M1

Rudenberg, H. G. , 58R1

Runyan, W. R. , 65W2

S

Saparin, G. V., 62S1

Sato, K., 65A1

Sawyer, D. E., 67P1

Schreiber, H. Jr., 63L1

Schroen, W. , 65H1

Schumann, P. A. Jr., 63G1,

63S2, 64S1, 65G2, 65S2

Schwuttke, G. H., 65S1

Sheiner, L. S. , 64S1

Sikorski, S., 66S1

Slichter, W. P. , 53B1

Smits, F. M., 58S1

13
Spivak, G. V., 62S1

Stride, A. A., 60B1

Struthers, J. D., 53B1

Sulway, D. V., 6 7T1

Sutkowski, W. J., 66L1

Swart zendruber, L. J., 64S2

Swiderski, J., 60S1, 61S1,

63S1, 65M4, 65P1

Szebeni, P., 63L2

Zaininger, K. H. , 66Z1

Zerbst, M. , 59Z1

Ziegler, G., 65Z1

Zrudsky, D. R. , 66Z2

Zucker, J . , 56H1

Tannenbaum, E., 61T1

Tarui, Y., 63T1

Tauc, J., 55T1, 57T1

Thiessen, K., 62T2

Thomas, C. 0., 62T1

Thornton, P. R., 67T1

Tihanyi, J., 6 7T2

Trousil, Z., 56T1

V

Valyashko, E. G., 64B2, 66B1

Vaughan, D. E., 61V1

W

Wackwitz, R. C, 65W2

Wang Shou-wu, 63W1

Watanabe, H., 65W3, 66M3

Watelski, S. B., 62B1, 65W2

Webb, W. W. , 62W1

Whelan, M. V., 65W1

Winstel, "G. , 59Z1

Wittry, D. B., 66W1

Wolfson, R. G., 67J1

14
5. INDEX ACCORDING TO METHODS OR

EFFECTS USED TO DETECT INHOMOGENEITIES

1. RESISTIVITY

PHOTOVOLTAIC

55T1, 56F1, 56T1, 57T1 , 5901, 59Z1, 60B5 , 60C1, 6001 , 60S1, 61S1 , 62K1, 63P1, 64B2, 65M4, 65P1, 66B1 , 66S1

ELECTRON -VOLTAIC

65M2, 65M3, 66M1, 66M2

PHOTOCONDUCTIVITY

60B2, 65M1, 66G1

TWO -POINT PROBE

58B1, 59R1, 60L1, 61B2 , 62G1, 63L2, 6411, 6511, 67A1,

67D1, 67L1

FOUR-POINT PROBE

58S1, 59D1, 59R1, 60B1, 60H3, 60L1, 61K1 , 61T1, 61V1,

63C1, 63H1, 63S2, 63T1, 64A1 , 64D1 , 64S1, 64S2 , 65S2,

65W2, 66Z2, 67A1

SPREADING RESISTANCE

62B1, 63G1, 63S2, 65B2, 66M4 , 67M1

VOLTAGE BREAKDOWN

63G1, 63S2, 64B1, 64D1, 65G2 , 66A2

IMPEDANCE

56H1, 59R1, 64L2, 65B1 , 67H1

ABSORPTION

65M5

MICROWAVE DIODE

63K2

15
ELECTRON MICROPROBE

65W3, 66M3

2. IMPURITY CONCENTRATION

VOLTAGE BREAKDOWN

66A2, 67F1

INTERNAL INJECTION -EXTRACTION

60H1

C VS V

61B1, 62T1, 64K1, 67D3

REFLECTIVITY

62E1, 63K1

ABSORPTION

60H1

REFRACTIVE INDEX

66D1

NEUTRON ACTIVATION

53B1, 61T1, 65H1

RADIOACTIVE TRACER

61A1

ELECTRON MICROPROBE

66L1, 66N1, 66W1, 67C2

ELECTROCHEMICAL

62H1 , 6211, 62P1, 63L2, 65G3

3. DIFFUSION LENGTH

PHOTOVOLTAIC

63S1, 65M4

16
SURFACE PHOTOVOLTAGE

61G1

PHOTOCONDUCTIVITY

63S1

ELECTRON MICROPROBE

66C2

4. LIFETIME

PHOTOVOLTAIC

60S1, 63S1, 67E1

PHOTOCONDUCTIVITY

56H1, 61R1, 62T2, 63S1, 63W1, 64B1 , 66B1

ELECTRON MICROPROBE

66C2

LIGHT MICROPROBE

54A1

5. SURFACE RECOMBINATION VELOCITY

PHOTOVOLTAIC

60S1

6. SURFACE

C VS V

65W1, 66B2, 66Z1

ELECTRON MICROPROBE

63L1, 66E1, 66N1 , 67T1

LIGHT MICROPROBE

65H1, 67H2, 67P1, 67T2

17
7. MOBILITY

LIGHT MICROPROBE

54A1

8. CRYSTAL PERFECTION

PHOTOVOLTAIC

64B2

REFRACTIVE INDEX

66D1

BIREFRINGENCE

59L2

ELECTRON MICROPROBE

63L1, 65C1, 66C1, 66C2, 66N1

X-RAY TOPOGRAPHY

59L1, 62W1, 64F1, 64L1, 64M1, 65S1 , 66H1 , 66J1, 66L2,

67A1, 67A2, 67A3, 67B1, 67C1, 67D2, 67J1

ELECTROCHEMICAL

62H1, 6211, 62P1, 65G3

9. JUNCTION

TWO -POINT

67D1, 67L1

SPREADING RESISTANCE

66M4

C VS V

60H2, 61B1, 63M1, 65G1, 66A1, 67D3

MICROWAVE DIODE

63K2

18
ELECTRON MICROPROBE

62S1, 66E1, 66N1

ELECTROCHEMICAL

62H1, 6211, 62P1, 65G3

19
6. BIBLIOGRAPHY

1953 -- 1958

53B1 Burton, J. A., E. D. Kolb, W. P. Slichter, and J. D.

Struthers

DISTRIBUTION OF SOLUTE IN CRYSTALS FROM THE MELT. PART II EXPERIMENTAL

J. Chem. Phys., vol. 21, pp. 1991-1996, November 1953.

(CA:48-1762d)

IMPURITY CONCENTRATION, CRYSTAL PERFECTION

Ge

RADIOACTIVE TRACER

EXPERIMENTAL

54A1 Adam, G.

A FLYING LIGHT SPOT METHOD FOR SIMULTANEOUS DETERMINATION

OF LIFETIME AND MOBILITY OF INJECTED CURRENT CARRIERS

Physica, vol. 20, pp. 1037-1041, November 1954.

(PA:55-3733)

LIFETIME, MOBILITY

Ge, Si

LIGHT MICROPROBE

APPARATUS

EXPERIMENTAL ANALYSIS

55T1 Tauc, J.

THE THEORY OF A BULK PHOTO -VOLTAIC PHENOMENON IN

SEMICONDUCTORS

Czech. J. Phys., vol. 5, pp. 178-191, April 1955.

(PA:55-7970)

RESISTIVITY

Ge

PHOTOVOLTAIC

THEORETICAL

56F1 Frank, H.

PHOTOELECTRIC MEASUREMENT OF INTERNAL ELECTRIC FIELD IN

INHOMOGENEOUS SEMICONDUCTORS

Czech. J. Phys., vol. 6, pp. 433-442, October 1956 (in

German). (PA: 57-7904)

RESISTIVITY

Ge

PHOTOVOLTAIC

APPARATUS

EXPERIMENTAL ANALYSIS

56H1 Henisch, H. K., and J. Zucker

CONTACTLESS METHOD FOR THE ESTIMATION OF RESISTIVITY

AND LIFETIME OF SEMICONDUCTORS

Rev. Sci. Instrum., vol. 27, pp. 409-410, June 1956.

(CA:51-12639c)

RESISTIVITY, LIFETIME

Ge, Si

PHOTOCONDUCTIVITY, IMPEDANCE

APPARATUS

EXPERIMENTAL

20
56T1 Trousil, Z. BULK PHOTO-VOLTAIC PHENOMENON

Czech. J. Phys . , vol. 6, pp. 96-98, January 1956

(PA:57-396)

RESISTIVITY

Ge

PHOTOVOLTAIC

EXPERIMENTAL

57T1 Tauc, J.

GENERATION OF AN EMF IN SEMICONDUCTORS WITH NONEQUILIBRIUM

CURRENT CARRIER CONCENTRATIONS

Rev. Mod. Phys., vol. 29, pp. 308-324, July 1957.

(PA:58-3097)

RESISTIVITY

Ge

[PHOTOVOLTAIC]

REVIEW

58B1 Baranskii, P. I., and E. I. Komukhaev

BULK-GRADIENT EMF IN THE PRESENCE OF CURRENT IN GERMANIUM

Soviet Phys. Tech. Phys., vol. 3, pp. 1744-1751, September

1958. (PA:59-4588)

RESISTIVITY

Ge

TWO -POINT PROBE

EXPERIMENTAL ANALYSIS

58R1 Rudenberg, H. G.

RESISTIVITY MEASURING TECHNIQUES IN SEMICONDUCTORS

Proc. Nat. Electronics Conf . , vol. 14, pp. 585-597, 1958.

(EA: 59-4652) Also Semiconductor Products, vol. 2,

pp. 28-34, September 1959.

RESISTIVITY

Ge, Si

TWO-POINT, FOUR-POINT, IMPEDANCE

APPARATUS

EXPERIMENTAL ANALYSIS

58S1 Smits, F. M.

MEASUREMENT OF SHEET RESISTIVITIES WITH THE FOUR-POINT

PROBE

Bell Syst. Tech. J., vol. 37, pp. 711-718, May 1958.

(EA:58-4029)

RESISTIVITY

FOUR-POINT

THEORETICAL

21
- 1959 -

59D1 Dew-Hughes, D., A. H. Jones, and G. E. Brock

IMPROVED AUTOMATIC FOUR-POINT RESISTIVITY PROBE

Rev. Sci. Instrum., vol. 30, pp. 920-922, October 1959

(PA:60-2856)

RESISTIVITY

Ge

FOUR-POINT

APPARATUS

EXPERIMENTAL

59L1 Lang, A. R.

STUDIES OF INDIVIDUAL DISLOCATIONS IN CRYSTALS BY X-RAY

DIFFRACTION MICRORADIOGRAPHY

J. Appl. Phys., vol. 30, pp. 1748-1755, November 1959.

(PA:60-1587)

CRYSTAL PERFECTION

Ge, Si

X-RAY TOPOGRAPHY

EXPERIMENTAL ANALYSIS

59L2 Lederhandler, S.

INFRARED STUDIES

J. Appl . Phys .

(PA:60-1723)

CRYSTAL PERFECTION

C -i

R.

OF

vol

BIREFRINGENCE

30, pp. 1631-

IN SILICON

1638, November

ol

BIREFRINGENCE

APPARATUS

EXPERIMENTAL

5901 Oroshnik, J., an d A. Many

1959

EVALUATION OF THE HOMOGENEITY OF GERMANIUM SINGLE CRYSTALS

BY PHOTOVOLTAIC SCANNING

J. Electrochem. Soc . , vol. 106, pp. 360-362, April 1959.

(CA:53-10985d)

RESISTIVITY

Ge

PHOTOVOLTAIC

EXPERIMENTAL

59Z1 Zerbst, M. , and G. Winstel

DETERMINATION OF DOPING GRADIENTS FROM PHOTO-EMF AND

PHOTOCONDUCTIVITY IN SEMICONDUCTORS

Z. Naturforsch. , vol. 14a, pp. 754-755, August 1959 (in

German). (PA: 59-13285)

RESISTIVITY

PHOTOVOLTAIC

THEORETICAL

22
- 1960

60B1 Brice, J. C. , and A. A. Stride

A CONTINUOUS-READING FOUR-POINT RESISTIVITY PROBE

Solid-State Electronics, vol. 1, p. 245, July 1960.

(PA:62-11581)

RESISTIVITY

Ge

FOUR-POINT

APPARATUS

EXPERIMENTAL

60B2 Baranskii, P. I. THE VOLUME-GRADIENT EFFECTS IN SEMICONDUCTORS

Proceedings of the International Conference on Semiconductor Physics, Prague, 1960, Academic Press,

New York, 1961, pp. 815-817 (in Russian). (PA: 62-23262)

RESISTIVITY

PHOTOVOLTAIC

EXPERIMENTAL ANALYSIS

60C1 Cox, C. D.

BULK PHOTOEFFECTS IN INHOMOGENEOUS SEMICONDUCTORS

Canad. J. Phys . , vol. 38, pp. 1328-1342, October 1960.

(PA:60-18059)

RESISTIVITY

Ge

PHOTOVOLTAIC

APPARATUS

THEORETICAL

60H1 Harrick, N. J.

SEMICONDUCTOR TYPE AND LOCAL DOPING DETERMINED THROUGH

THE USE OF INFRARED RADIATION

Solid-State Electronics, vol. 1, pp. 234-244, July 1960

(PA:62-8312)

IMPURITY CONCENTRATION

Ge

ABSORPTION, INTERNAL INJECTION-EXTRACTION

EXPERIMENTAL ANALYSIS

60H2 Hilibrand, J., and R. D. Gold

DETERMINATION OF THE IMPURITY DISTRIBUTION IN JUNCTION

DIODES FROM CAPACITANCE - VOLTAGE MEASUREMENTS

R.C.A. Rev., vol. 21, pp. 245-252, June 1960.

(PA:60-15972)

JUNCTION

Ge

C VS V

EXPERIMENTAL ANALYSIS

23
60H3 Hansen, E. B.

ON THE INFLUENCE OF SHAPE AND VARIATIONS IN CONDUCTIVITY

OF THE SAMPLE ON FOUR- POINT MEASUREMENTS

Appl. Sci. Res. B, vol. 8, no. 2, pp. 93-104, 1960.

(PA:60-7045)

RESISTIVITY

FOUR-POINT

THEORETICAL

60L1 Lamorte, M. F. CALCULATION OF CONCENTRATION PROFILES AND SURFACE

CONCENTRATION FROM SHEET -CONDUCTANCE MEASUREMENTS OF

DIFFUSED LAYERS

Solid-State Electronics, vol. 1, pp. 164-171, July 1960

(PA:62-8279)

RESISTIVITY

Si

TWO-POINT, FOUR-POINT

SURFACE PREPARATION

THEORETICAL

6001 Oroshnik, J., and A. Many

QUANTITATIVE PHOTOVOLTAIC EVALUATION OF THE RESISTIVITY

HOMOGENEITY OF GERMANIUM SINGLE CRYSTALS

Solid-State Electronics, vol. 1, pp. 46-53, March 1960.

(PA:61-14514)

RESISTIVITY

Ge

[PHOTOVOLTAIC]

APPARATUS

EXPERIMENTAL

60S1 Swiderski, J.

NEW APPLICATIONS OF BULK PHOTOVOLTAIC EFFECT MEASUREMENTS

ON GERMANIUM

Proceedings of the International Conference on Semiconductor

Physics, Prague, 1960, Academic Press, New York, 1961,

pp. 479-482. (PA:62-23464)

RESISTIVITY, LIFETIME, SURFACE RECOMBINATION VELOCITY

Ge

PHOTOVOLTAIC

EXPERIMENTAL ANALYSIS

1961 -

61A1 Allred, W. P., and R. T. Bate

ANISOTROPIC SEGREGATION IN InSb

J. Electrochem Soc, vol. 108, pp. 258-261, March 1961

(CA:55-11100a)

IMPURITY CONCENTRATION

InSb

RADIOACTIVE TRACER

EXPERIMENTAL

24
61B1 Biet, J. P.

DETERMINATION OF DOPING PROFILE OF IMPURITIES OF A

TRANSISTOR FOR MEASUREMENT OF CERTAIN ELECTRICAL

CHARACTERISTICS

J. Phys. Radium, vol. 22, no. 2, pp. 59A-63A, February 1961

(in French). (PA: 61-17778)

IMPURITY CONCENTRATION, JUNCTION

C VS V

THEORETICAL

61B2 Baranskii, P. I. VOLUME -GRADIENT PHENOMENA AND LIMITS OF APPLICABILITY

OF THE POTENTIOMETRIC PROBE METHOD OF MEASURING THE ELECTRICAL

CONDUCTIVITY OF SEMICONDUCTORS

Soviet Phys. Solid State, vol. 3, pp. 643-646, September

1961. (PA:61-17644)

RESISTIVITY

Ge

[TWO-POINT]

EXPERIMENTAL ANALYSIS

61G1 Goodman, A. M.

A METHOD FOR THE MEASUREMENT OF SHORT MINORITY CARRIER

DIFFUSION LENGTHS IN SEMICONDUCTORS

J. Appl. Phys., vol. 32, pp. 2550-2552, December 1961.

(PA:62-2131)

DIFFUSION LENGTH

GaAs

SURFACE PHOTOVOLTAGE

APPARATUS

EXPERIMENTAL

61K1 Ksoll, G.

ON THE DETERMINATION OF THE CONCENTRATION PROFILE OF

DIFFUSION LAYERS IN SILICON FROM LAYER CONDUCTIVITY

MEASUREMENTS

Phys. Status Solidi, vol. 1, pp. 181-188, June 1961 (in

German). (PA:62-2155)

RESISTIVITY

Si

FOUR-POINT

EXPERIMENTAL ANALYSIS

61R1 Rashba, E. I., and V. A. Romanov

A PHOTOELECTRIC METHOD OF OBSERVING INHOMOGENEITY WITH

DEPTH IN SEMICONDUCTORS

Soviet Phys. Solid State, vol. 2, pp. 2393-2396, May 1961.

(PA:61-5014)

LIFETIME

Ge

PHOTOCONDUCTIVITY

EXPERIMENTAL ANALYSIS

25
61S1 Swiderski, J.

APPLICATION OF THE PHOTOVOLTAIC EFFECT IN THE STUDY OF

THE HOMOGENEITY OF GERMANIUM

Arch. Elektrotech. , vol. 10, pp. 441-467, 1961 (in Polish)

(PA:62-12510)

RESISTIVITY

Ge, Si

[PHOTOVOLTAIC]

APPARATUS

EXPERIMENTAL ANALYSIS

61T1 Tannenbaum, E.

DETAILED ANALYSIS OF THIN PHOSPHORUS -DIFFUSED LAYERS IN

P-TYPE SILICON

Solid-State Electronics, vol. 2, pp. 123-132, March 1961.

(EA:61-4004)

RESISTIVITY, IMPURITY CONCENTRATION

Si

FOUR-POINT, NEUTRON ACTIVATION

GENERAL PROCEDURES

EXPERIMENTAL ANALYSIS

61V1 Vaughan, D. E.

FOUR-POINT RESISTIVITY MEASUREMENTS ON SMALL CIRCULAR

SPECIMENS

Brit. J. Appl. Phys., vol. 12, pp. 414-416, August 1961

(PA:61-16203)

RESISTIVITY

FOUR-POINT

THERORETICAL

1962

62B1 Biard, J. R. , and S. B. Watelski

EVALUATION OF GERMANIUM EPITAXIAL FILMS

J. Electrochem. Soc, vol. 109, pp. 705-709, August 1962.

(PA:63-2889)

RESISTIVITY

Ge

SPREADING RESISTANCE

EXPERIMENTAL

62E1 Edwards, D. F., and P. D. Maker

QUANTITATIVE MEASUREMENT OF SEMICONDUCTOR HOMOGENEITY

FROM PLASMA EDGE

J. Appl. Phys., vol. 33, pp. 2466-2468, August 1962.

(PA:62-16686)

IMPURITY CONCENTRATION

InAs

REFLECTIVITY

EXPERIMENTAL ANALYSIS

26
62G1 Gergely, Gy. , and 0. Hantay

ON THE MEASUREMENT OF CROSS-SECTIONAL RESISTIVITY

VARIATION ON SEMICONDUCTOR CRYSTALS

Solid-State Electronics, vol. 5, pp. 416-417, November - December 1962. (PA: 63-17844)

RESISTIVITY

Ge, Si

TWO -POINT

EXPERIMENTAL

62H1 Holmes, P. J.

PRACTICAL APPLICATIONS OF CHEMICAL ETCHING

The Electrochemistry of Semiconductors, P. J. Holmes, Ed.,

Academic Press, New York, 1962, pp. 329-377. (CA:57-225c)

IMPURITY CONCENTRATION, CRYSTAL PERFECTION, JUNCTION

Ge, Si, GaAs, InSb, InAs

[ELECTROCHEMICAL]

GENERAL PROCEDURES

REVIEW

6211 Irving, B. A.

CHEMICAL ETCHING OF SEMICONDUCTORS

The Electrochemistry of Semiconductors, P. J. Holmes, Ed.,

Academic Press, New York, 1962, pp. 256-289. (CA:57-225d)

IMPURITY CONCENTRATION, CRYSTAL PERFECTION, JUNCTION

ELECTROCHEMICAL

REVIEW

62K1 Kokorev, D. T. , and N. F. Kovtonyuk

ANALYSIS OF THE HOMOGENEITY OF SEMICONDUCTOR MATERIALS BY

USING THE METHOD OF THE VOLUME PHOTO - EMF

Instrum. Exper. Tech., vol. 28, pp. 382-387, November 1962

(PA:63-15567)

RESISTIVITY

Ge

PHOTOVOLTAIC

APPARATUS

EXPERIMENTAL

62P1 Pankove, J. I. PRAqTICAL APPLICATIONS OF ELECTROLYTIC TREATMENTS TO

SEMICONDUCTORS

The Electrochemistry of Semiconductors, P. J. Holmes, Ed.,

Academic Press, New York, 1962, pp. 290-328. (CA:57-225d)

IMPURITY CONCENTRATION, CRYSTAL PERFECTION, JUNCTION

Ge, Si

ELECTROCHEMICAL

REVIEW

62S1 Spivak, G. V., G. V. Saparin, and N. A. Pereverzev

POTENTIAL DISTRIBUTION IN A P-N JUNCTION AS OBSERVED BY

ELECTRON-OPTICAL SCANNING

Bull. Acad. Sci. USSR, Phys. Ser. , vol. 26, pp. 1362-1365,

November 1962. (PA: 64-10074)

JUNCTION

Ge, Si

ELECTRON MICROPROBE

EXPERIMENTAL

27
62T1 Thomas, C. 0., D. Kahng, and R. C. Manz

IMPURITY DISTRIUBTION IN EPITAXIAL SILICON FILMS

J. Electrochem. Soc, vol. 109, pp. 1055-1061, November

1962. (PA:63-10650)

IMPURITY CONCENTRATION

Si

C VS V

FABRICATION

EXPERIMENTAL ANALYSIS

62T2 Thiessen, K., and H. Hornung

MEASUREMENT OF INHOMOGENEOUS DISTRIBUTION OF RECOMBINATION

CENTERS IN GERMANIUM BY MEANS OF PHOTOCONDUCTIVE AND

PHOTOMAGNETOELECTIC EFFECTS

Phys. Status Solidi, vol. 2 , pp . 1158-1164, September 1962

(in German). (PA: 62-23344)

LIFETIME

Ge

PHOTOCONDUCTIVITY

EXPERIMENTAL ANALYSIS

62W1 Webb, W. W.

X-RAY DIFFRACTION TOPOGRAPHY

Direct Observation of Imperfections in Crystals, J. B.

Newkirk and J. H. Wernick, Eds., Interscience Publishers,

New York, 1962, pp. 29-76. (CA: 58-7441h)

CRYSTAL PERFECTION

[X-RAY TOPOGRAPHY]

REVIEW

1963 -

63C1 Combs, J. F., and M. P. Albert

DIAMETER CORRECTION FACTORS FOR THE RESISTIVITY

MEASUREMENT OF SEMICONDUCTOR SLICES

Semiconductor Prod., vol. 6, pp. 26,27,43, February 1963.

(EA:63-9771)

RESISTIVITY

FOUR-POINT

THEORETICAL

63G1 Gardner, E. E., J. F. Hallenback, Jr., and P. A.

Schumann, Jr.

COMPARISON OF RESISTIVITY MEASUREMENT TECHNIQUES ON

EPITAXIAL SILICON

Solid-State Electronics, vol. 6, pp. 311-313, May - June

1963. (PA:64-6989)

RESISTIVITY

Si

SPREADING RESISTANCE, VOLTAGE BREAKDOWN

EXPERIMENTAL ANALYSIS

28
63H1 Hora, H.

ON THE MEASUREMENT OF SEMICONDUCTOR LAYERS ON DIFFERENT

CONDUCTIVITY SUBSTRATES WITH A FIVE-PROBE METHOD

Z. Angew. Phys., vol. 15, pp. 491-496, June 1963 (in

German). (PA: 63- 21674)

RESISTIVITY

Ge

FOUR-POINT

THEORETICAL

63K1 Kudman, I . A NONDESTRUCTIVE MEASUREMENT

HEAVILY DOPED SEMICONDUCTING

TO THIN SURFACE LAYERS

J. Appl. Phys., vol. 34, pp.

(PA:63-17878)

IMPURITY CONCENTRATION

GaAs

REFLECTIVITY

EXPERIMENTAL

OF CARRIER CONCENTRATION IN

MATERIALS AND ITS APPLICATION

1826-1827, June 1963.

63K2 Kressel, H., and M. A. Klein

DETERMINATION OF EPITAXIAL-LAYER IMPURITY

MEANS OF MICROWAVE - DIODE MEASUREMENTS

Solid-State Electronics, vol. 6, pp. 309-311

1963. (PA:63-25273)

RESISTIVITY, JUNCTION

Si

MICROWAVE DIODE

EXPERIMENTAL

PROFILES BY

May June

63L1 Lander, J. J., H. Schreiber, Jr., T. M. Buck, and J. R. Mathews

MICROSCOPY OF INTERNAL CRYSTAL IMPERFECTIONS IN Si P-N

JUNCTION DIODES BY USE OF ELECTRON BEAMS

Appl. Phys. Letters, vol. 3, pp. 206-207, December 1, 1963.

(PA:64-7657)

CRYSTAL PERFECTION, SURFACE

Si

ELECTRON MICROPROBE

EXPERIMENTAL

63L2 Lorinczy, A., T. Nemeth, and P. Szebeni

MICRO-INHOMOGENEITIES IN Ge SINGLE CRYSTALS

Acta Phys. Hungar. , vol. 16, no. 1, pp. 63-67, 1963.

(PA:63-22786)

RESISTIVITY

Ge

TWO-POINT, ELECTROCHEMICAL

EXPERIMENTAL

29
63M1 Meyer, N. I., and T. Guldbrandsen

METHOD FOR MEASURING IMPURITY DISTRIBUTIONS IN

SEMICONDUCTOR CRYSTALS

Proc. IEEE, vol. 51, pp. 1631-1637, November 1963.

(PA:64-15530)

JUNCTION

Ge, Si

C VS V

APPARATUS

EXPERIMENTAL ANALYSIS

63P1 Pataki, G.

REMARK ON THE THEORY OF THE BULK PHOTOEFFECT IN

INHOMOGENEOUS SEMICONDUCTORS

Acta Phys . Hungar. , vol. 15, no. 3, pp. 353-356, 1963.

(PA:63-2039S)

RESISTIVITY

PHOTOVOLTAIC

THEORETICAL

63S1 Swiderski, J.

MEASUREMENTS OF DIFFUSION LENGTH OF MINORITY CARRIERS IN

AN INHOMOGENEOUS SEMICONDUCTOR

Bull. Acad. Polon. Sci. Ser. Sci. Tech., vol. 11, no. 9,

pp. 63[487]-66[490] , 1963. (PA:64-9892)

DIFFUSION LENGTH

Ge, Si

PHOTOVOLTAIC, PHOTOCONDUCTIVITY

EXPERIMENTAL ANALYSIS

63S2 Schumann, P. A. Jr., and J. F. Hallenback, Jr.

A NOVEL FOUR- POINT PROBE FOR EPITAXIAL AND BULK

SEMICONDUCTOR RESISTIVITY MEASUREMENTS

J. Electrochem. Soc, vol. 110, pp. 538-542, June 1963.

(PA:63-25341)

RESISTIVITY

Si

FOUR-POINT, SPREADING RESISTANCE, VOLTAGE BREAKDOWN

EXPERIMENTAL ANALYSIS

63T1 Tarui, Y.

METHOD FOR MEASURING THE RESISTIVITY OF HIGH-PURITY SILICON

J. Inst. Elect. Commun . Engrs . Japan, vol. 46, pp. 46-54,

January 1963. (EA:64-285)

RESISTIVITY

Si

FOUR-POINT

APPARATUS

EXPERIMENTAL ANALYSIS

30
63W1 Wang Shou-wu

MEASUREMENT OF THE LIFETIME OF MINORITY CURRENT CARRIERS

IN SEMICONDUCTORS BY OBSERVING THE PHOTOCONDUCTIVE DECAY

OF THE SPREADING RESISTANCE UNDER A POINT CONTACT

Acta Phys. Sinica, vol. 19, pp. 176-190, March 1963 (in

Chinese). (PA:64-1582) Translation available in AD 631119.

LIFETIME

Ge, Si

PHOTOCONDUCTIVITY

APPARATUS

EXPERIMENTAL ANALYSIS

1964 -

64A1 Albert, M.

CORRECTION

EVALUATION

IEEE Trans

April 1964

RESISTIVITY

FOUR-POINT

THEORETICAL

P .

, and J . F . Comb s FACTORS FOR RADIAL RESISTIVITY

OF SEMICONDUCTOR SLICES

GRADIENT

Electron Devices, vol. ED-11, pp. 148-151

(PA:64-20350)

64B1 Brownson, J.

A THREE-POINT PROBE METHOD FOR ELECTRICAL CHARACTERIZATION

OF EPITAXIAL FILMS

J. Electrochem. Soc, vol. Ill, pp. 919-924, August 1964.

(PA:64-28569)

RESISTIVITY

Si

VOLTAGE BREAKDOWN

APPARATUS

EXPERIMENTAL ANALYSIS

64B2 Baev, I. A., and E. G. Valyashko

STUDY OF THE HOMOGENEITY OF SEMICONDUCTOR CRYSTALS WITH

THE USE OF A MOVING LIGHT PROBE

Soviet Phys. Solid State, vol. 6, pp. 1357-1361, December

1964. (PA:65-12706)

RESISTIVITY, CRYSTAL PERFECTION, LIFETIME

Ge, InSb

PHOTOVOLTAIC, PHOTOCONDUCTIVITY

APPARATUS

EXPERIMENTAL

64D1 Dobbs, P. J. H., and F. S. Kovacs

MEASUREMENT OF THE RESISTIVITY OF SILICON EPITAXIAL

WAFERS

Semiconductor Prod. Solid State Technol .

, vol. 7,

pp. 28-31, August 1964. (EA:65-249)

RESISTIVITY

Si

FOUR-POINT, VOLTAGE BREAKDOWN

APPARATUS

EXPERIMENTAL

31
64F1 Fiermans, L.

DIRECT OBSERVATION OF DISLOCATIONS IN SILICON SINGLE

CRYSTALS USING A WHITE X-RAY RADIATION TECHNIQUE

Phys. Status Solidi, vol. 6, no. 1, pp. 169-172, 1964.

(PA:64-25945)

CRYSTAL PERFECTION

Si

X-RAY TOPOGRAPHY

APPARATUS

EXPERIMENTAL

6411 Iglitsyn, M. I., D. I. Levinson, and V. U. Chernopisskii

CHECKING THE UNIFORMITY OF MONOCRYSTALLINE GERMANIUM BY

THE SINGLE PROBE METHOD

Industr. Lab., vol. 30, pp. 251-254, February 1964.

(CA:60-11471c)

RESISTIVITY

Ge

TWO -POINT

APPARATUS

EXPERIMENTAL

64K1 Kovacs, F. S., and A. S. Epstein

DETERMINATION OF IMPURITY DISTRIBUTION PROFILES IN

SILICON EPITAXIAL WAFERS

Semiconductor Prod. Solid State Technol . , vol. 7,

pp. 32-36, August 1964. (PA:65-1462)

IMPURITY CONCENTRATION

Si

C VS V

CONTACTS, APPARATUS, FABRICATION

EXPERIMENTAL

64L1 Lang, A. R.

CRYSTAL GROWTH AND CRYSTAL PERFECTION: X-RAY TOPOGRAPHIC

STUDIES

Disc. Faraday Soc. , no. 38, pp. 292-297, 1964.

(PA:66-1853)

CRYSTAL PERFECTION

Ge, Si

X-RAY TOPOGRAPHY

REVIEW

64L2 Locherer, K.-H.

THEORIES OF THE CAPACITIVE MEASUREMENT OF THE CONDUCTIVITY

OF SEMICONDUCTOR SPECIMENS

Z. Angew. Phys., vol. 17, no. 6, pp. 429-436, 1964 (in

German). (PA:65-9665)

RESISTIVITY

IMPEDANCE

THEORETICAL

32
64M1 Makris, J. S., and C. H. Ma

A MODIFIED X-RAY DIFFRACTION MICROSCOPE TECHNIQUE FOR

STUDY OF DISLOCATIONS IN CRYSTALS

Trans. Metall. Soc. AIME, vol. 230, pp. 1110-1112, August

1964. (PA:64-30568)

CRYSTAL PERFECTION

Si

X-RAY TOPOGRAPHY

APPARATUS, SURFACE PREPARATION

EXPERIMENTAL

64S1 Schumann, P. A. Jr., and L. S. Sheiner

PRECISION OVER-UNDER FOUR-POINT PROBE WITH A SMALL

PROBE SPACING

Rev. Sci. Instrum. , vol. 35, pp. 959-962, August 1964.

(PA:64-26025)

RESISTIVITY

Si

FOUR-POINT

APPARATUS

EXPERIMENTAL ANALYSIS

64S2 Swartzendruber, L. J.

FOUR-POINT PROBE MEASUREMENT OF NON-UNIFORMITIES IN

SEMICONDUCTOR SHEET RESISTIVITY

Solid-State Electronics, vol. 7, pp. 413-422, June 1964.

(PA:64-22697)

RESISTIVITY

[FOUR-POINT]

THEORETICAL

- 1965

65A1 Abe, T., K. Sato, and N. Oi

DETERMINATION OF EPITAXIAL-LAYER IMPURITY DISTRIBUTION

BY NEUTRON ACTIVATION METHOD

Japan J. Appl. Phys ., vol. 4, pp. 70-71, January 1965.

(PA:65-12365)

IMPURITY CONCENTRATION

Si

NEUTRON ACTIVATION

EXPERIMENTAL

65B1 Bryant, C. A., and J. B. Gunn

NONCONTACT TECHNIQUE FOR THE LOCAL MEASUREMENT OF

SEMICONDUCTOR RESISTIVITY

Rev. Sci. Instrum., vol. 36, pp. 1614-1617, November 1965.

(PA:66-2322)

RESISTIVITY

Ge, Si

IMPEDANCE

APPARATUS

EXPERIMENTAL

33
65C1 Czaja, W., and J. R. Patel

OBSERVATIONS OF INDIVIDUAL DISLOCATIONS AND OXYGEN

PRECIPITATES IN SILICON WITH A SCANNING ELECTRON BEAM

METHOD

J. Appl. Phys., vol. 36, pp. 1476-1482, April 1965.

(PA:65-17657)

CRYSTAL PERFECTION

Si

[ELECTRON MICROPROBE]

APPARATUS

EXPERIMENTAL

DISTRIBUTION

475-477,

65G1 Gray, P. E. , and R. B. Adler

A SIMPLE METHOD FOR DETERMINING THE IMP

NEAR A P-N JUNCTION

IEEE Trans. Electron DevicesvolED- 12, PP

August 1965. (PA: 66 -8559)

JUNCTION

Si

C VS V

APPARATUS

EXPERIMENTAL ANALYSIS

65G2 Gardner, E. E., and P. A. Schumann, Jr.

MEASUREMENT OF RESISTIVITY OF SILICON EPITAXIAL LAYERS BY

THE THREE -POINT PROBE TECHNIQUE

Solid-State Electronics, vol. 8, pp. 165-174, February

1965. (PA:65-12707)

RESISTIVITY

Si

[VOLTAGE BREAKDOWN]

APPARATUS

EXPERIMENTAL ANALYSIS

65G3 Gatos, H. C. , and M. C. Lavine

CHEMICAL BEHAVIOR OF SEMICONDUCTORS: ETCHING

CHARACTERISTICS

Progress in Semiconductors, vol. 9, Heywood Book, Temple

Press Books Ltd., London 1965, pp. 1-45.

IMPURITY CONCENTRATION, CRYSTAL PERFECTION, JUNCTION

Ge, Si, GaAs, InSb

ELECTROCHEMICAL

SURFACE PREPARATION

REVIEW

65H1 Hooper, W. W., and W. Schroen

INVESTIGATION OF SURFACE BREAKDOWN BY LIGHT SCANNING

Physics of Failure in Electronics, vol. 3, RADC Series

in Reliability, M. F. Goldberg and J. Vaccaro, Eds., 1965,

pp. 433-451. AD 617715

SURFACE

Si

LIGHT MICROPROBE

APPARATUS

EXPERIMENTAL ANALYSIS

34
6511 Iglitsyn, M. I., A. A. Meier, 0. V. Karagioz, D. I. Levinzon, and A. V. Ivanov

A SINGLE-PROBE METHOD OF MEASURING THE RESISTIVITY OF

SEMICONDUCTORS WITH ALTERNATING CURRENT

Industr. Lab., vol. 31, pp. 1355-1357, September 1965.

(CA:63-15694h)

RESISTIVITY

Ge, Si

TWO-POINT

APPARATUS

EXPERIMENTAL

65M1 Malyutenko, V. K., and V. 0. Romanov

SOME PECULIARITIES OF PHOTOCONDUCTIVITY KINETICS IN

NONHOMOGENEOUS SEMICONDUCTORS

Ukrayin. Fiz. Zh., vol. 10, pp. 459-461, April 1965 (in

Ukrainian). (PA:66-5507)

RESISTIVITY

Ge

PHOTOCONDUCTIVITY

EXPERIMENTAL ANALYSIS

65M2 Munakata, C.

BULK ELECTRON VOLTAIC EFFECT

Japan. J. Appl. Phys . , vol. 4, p. 697, September 1965.

(PA:66-5506)

RESISTIVITY

Ge

ELECTRON -VOLTAIC

EXPERIMENTAL

65M3 Munakata, C.

MEASUREMENT OF THE HOMOGENEITY OF A SEMICONDUCTOR WITH AN

ELECTRON BEAM

Japan. J. Appl. Phys., vol. 4, p. 815, October 1965.

(PA:66-5416)

RESISTIVITY

Ge

ELECTRON-VOLTAIC

EXPERIMENTAL

65M4 Markowska, E., and J. Swiderski

APPLICATION OF LASER TO MEASUREMENTS OF HOMOGENEITY AND

DIFFUSION LENGTH OF MINORITY CARRIERS IN SEMICONDUCTORS

Bull. Acad. Polon. Sci. Ser. Sci. Tech., vol 13, no. 3,

pp. 39[257]-42[260] , 1965. (PA: 66 - 12326)

RESISTIVITY, DIFFUSION LENGTH

Ge

PHOTOVOLTAIC

APPARATUS

EXPERIMENTAL

35
65M5 Mil'vidskii, M. G. , S. P. Grishina, and A. V. Berkova

DETECTING INHOMOGENEITIES IN SILICON SINGLE CRYSTALS

WITH INFRARED TRANSILLUMINATION

Industr. Lab., vol. 31, pp. 586-588, May 1965.

(CA:63-5030d)

RESISTIVITY

Si

ABSORPTION

EXPERIMENTAL

65P1 Piotrowski, K., and J. Swiderski

THE PHOTOVOLTAIC METHOD OF MEASURING THE SPECIFIC

RESISTANCE OF EPITAXIAL LAYERS

Przeglad Elektron. , no. 1, pp. 39-41, 1965 (in Polish)

(EA:65-12226) Translation available in AD 636678.

RESISTIVITY

PHOTOVOLTAIC EFFECT

EXPERIMENTAL ANALYSIS

65S1 Schwuttke, G. H.

NEW X-RAY DIFFRACTION MICROSCOPY TECHNIQUE FOR THE STUDY

OF IMPERFECTIONS IN SEMICONDUCTOR CRYSTALS

J. Appl. Phys., vol. 36, pp. 2712-2721, September 1965.

(PA:65-33064)

CRYSTAL PERFECTION

Si

[X-RAY TOPOGRAPHY]

APPARATUS

EXPERIMENTAL ANALYSIS

65S2 Schumann, P. A. Jr., and E. E. Gardner

FOUR-POINT PROBE EVALUATION OF SILICON N/N+ AND P/P+ STRUCTURES

Trans. Metall. Soc. AIME, vol. 233, pp. 602-608, March

1965. (PA:65-17922)

RESISTIVITY

Si

FOUR-POINT

APPARATUS

EXPERIMENTAL ANALYSIS

65W1 Whelan, M. V.

INFLUENCE OF CHARGE INTERACTIONS ON CAPACITANCE VERSUS

VOLTAGE CURVES IN MOS STRUCTURES

Philips Res. Rep., vol. 20, pp. 562-577, October 1965.

(PA:66-15679) Correction in vol. 21, p. 151, April 1966

SURFACE

Si

C VS V

EXPERIMENTAL ANALYSIS

36
65W2 Watelski, S. B., W. R. Runyan, and

A CONCENTRATION GRADIENT PROFILING

J. Electrochem. Soc, vol. 112, pp

1965. (CA:64-1458h)

RESISTIVITY

Si

FOUR-POINT

SURFACE PREPARATION

EXPERIMENTAL ANALYSIS

R. C. Wackwitz

METHOD

1051-1053, October

65W3 Watanabe, H.,

MEASUREMENT OF

Japan J. Appl

(PA:65-17819)

RESISTIVITY

ELECTRON MICROPROBE

APPARATUS

EXPERIMENTAL ANALYSIS

and C. Munakata

RESISTANCE BY MEANS OF ELECTRON BEAM - I Phys., vol. 4, pp. 250-258, April 1965.

65Z1 Ziegler, G. , H.-J. Henkel

INHOMOGENEOUS IMPURITY DISTRIBUTION IN

Z. Angew. Phys., vol. 19, pp. 401-404,

German). (PA:66-6507)

IMPURITY CONCENTRATION

GaAs

ABSORPTION

EXPERIMENTAL

GaAs SINGLE CRYSTALS

September 1965 (in

1966

66A1 Antonov, A. S.

DISTRIBUTION OF IMPURITIES AND THE VARIATION OF ELECTRIC

FIELD IN THE DRIFT REGION

Soviet Phys. Solid State,

1966. (PA:67-5026)

JUNCTION

Si

C VS V

EXPERIMENTAL ANALYSIS

OF SILICON

vol. 8, pp,

P-I-N DETECTORS

1061-1063, November

66A2 Allen, C. C. , L. H. Clevenger, and D. C. Gupta

A POINT CONTACT METHOD OF EVALUATING EPITAXIAL LAYER

RESISTIVITY

J. Electrochem.

(CA:65-127f)

RESISTIVITY, IMPURITY

Ge, Si

BREAKDOWN VOLTAGE

APPARATUS

EXPERIMENTAL ANALYSIS

Soc, vol. 113, pp. 508-510, May 1966

CONCENTRATION

37
66B1 Baev, I. A., and E. G. Valyashko

AN INVESTIGATION OF THE DISTRIBUTION OF INHOMOGENEOUS

REGIONS IN SEMICONDUCTORS

Soviet Phys. Solid State, vol. 7, pp. 2093-2099, March

1966. (PA:66-15602)

RESISTIVITY, LIFETIME

Ge, Si

[PHOTOVOLTAIC] , PHOTOCONDUCTIVITY

APPARATUS

EXPERIMENTAL ANALYSIS

66B2 Berglund, C. N.

SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE

INTERFACES

IEEE Trans. Electron Devices, vol. ED-13, pp. 701-705,

October 1966. (PA: 67-11404)

SURFACE

Si

C VS V

EXPERIMENTAL ANALYSIS

66C1 Czaja, W.

DETECTION OF PARTIAL DISLOCATIONS IN SILICON WITH THE

SCANNING ELECTRON BEAM TECHNIQUE

J. Appl. Phys., vol. 37, pp. 918-919, February 1966.

(PA:66-18315)

CRYSTAL PERFECTION

Si

ELECTRON MICROPROBE

EXPERIMENTAL

66C2 Czaja, W.

RESPONSE OF Si AND GaP P-N JUNCTIONS TO A 5- to 40-KeV

ELECTRON BEAM

J. Appl. Phys., vol. 37, pp. 4236-4248, October 1966.

(PA:67-1970)

DIFFUSION LENGTH, CRYSTAL PERFECTION

Si, GaP

ELECTRON MICROPROBE

EXPERIMENTAL ANALYSIS

66D1 Drougard, M. E.

OPTICAL INHOMOGENEITIES IN GALLIUM ARSENIDE

J. Appl. Phys., vol. 37, pp. 1858-1866, March 15, 1966

(PA:66-21721)

IMPURITY CONCENTRATION, CRYSTAL PERFECTION

GaAs

REFRACTIVE INDEX

APPARATUS

EXPERIMENTAL ANALYSIS

38
66E1 Everhart, T. E.

CERTAIN SEMICONDUCTOR APPLICATIONS OF THE SCANNING ELECTRON

MICROSCOPE

The Electron Microprobe, T. D. McKinley, K. F. J. Heinrich,

and D. B. Wittry, Eds., John Wiley $ Sons, New York, 1966,

pp. 665-676. (PA:67-24190)

JUNCTION, SURFACE

Si

ELECTRON MICROPROBE

APPARATUS

EXPERIMENTAL

66G1 Gallas, M. , J. Kopestansky, and V. Kyslik

THE INVESTIGATION OF INHOMOGENEITIES IN SILICON SINGLE

CRYSTALS BY THE METHOD OF PHOTOELECTRIC CONDUCTIVITY

Czech. vol. 16, pp. 583-589, July 1966.

(PA:67

RESISTIVITY

J. Phys. B,

-1949)

PHOTOCONDUCTIVITY

EXPERIMENTAL ANALYSIS

66H1 Howard, J. K., and R. D. Dobrott

COMPOSITIONAL X-RAY TOPOGRAPHY

J. Electrochem. Soc, yoI . 113, pp. 567-573, June 1966

(CA:65-141g)

CRYSTAL PERFECTION

GaAs, GaP, GaAs-InAs, Ge-Si

X-RAY TOPOGRAPHY

EXPERIMENTAL

66J1 Juleff, E. M., and A. G. Lafierre

PHOTOGRAPHIC EMULSION RELIEF TECHNIQUE FOR SMALL-AREA

INTENSITY COMPARISONS

J. Appl . Phys., vol. 37, pp. 3633-3634, August 1966.

(PA:67-1584)

CRYSTAL PERFECTION

Si

X-RAY TOPOGRAPHY

EXPERIMENTAL

66L1 Lublin, P., and W. J. Sutkowski

APPLICATION OF THE ELECTRON PROBE TO ELECTRONIC MATERIALS

The Electron Microprobe, T. D. McKinley, K. F. J. Heinrich,

and D. B. Wittry, Eds., John Wiley and Sons, New York, 1966,

pp. 677-690. (PA:67-24556)

IMPURITY CONCENTRATION

GaAs

ELECTRON MICROPROBE

SURFACE PREPARATION

EXPERIMENTAL

39
66L2 Layer, H. P., and R. D. Deslattes

A SIMPLE NONSCANNING CAMERA FOR X-RAY DIFFRACTION CONTRAST

TOPOGRAPHY

J. Appl. Phys., vol. 37, pp. 3631-3632, August 1966.

(PA:67-1535)

CRYSTAL PERFECTION

Si

X-RAY TOPOGRAPHY

APPARATUS

EXPERIMENTAL

66M1 Munakata, C.

DETECTION OF RESISTIVITY STRIATIONS IN A Ge CRYSTAL WITH

AN ELECTRON BEAM

Japan J. Appl. Phys., vol. 5, p. 336, April 1966.

(PA:66-21392)

RESISTIVITY

Ge

ELECTRON-VOLTAIC

EXPERIMENTAL

66M2 Munakata, C.

ON THE VOLTAGE INDUCED BY AN ELECTRON BEAM IN A BULK

SEMICONDUCTOR CRYSTAL

Japan J. Appl. Phys., vol. 5, pp. 756-763, September 1966.

(PA:67-7929)

RESISTIVITY

Ge

[ELECTRON-VOLTAIC]

THEORETICAL

66M3 Munakata, C. , and H. Watanabe

MEASUREMENT OF RESISTANCE BY MEANS OF ELECTRON BEAM - II Japan J. Appl. Phys., vol. 5, pp. 1157-1160, December 1966.

(PA:67-14943)

RESISTIVITY

Ge

ELECTRON MICROPROBE

EXPERIMENTAL ANALYSIS

66M4 Mazur, R. G., and D. H. Dickey

A SPREADING RESISTANCE TECHNIQUE FOR RESISTIVITY

MEASUREMENTS ON SILICON

J. Electrochem. Soc, vol. 113, pp. 255-259, March 1966.

(PA:66-18515)

RESISTIVITY, JUNCTION

Si

[SPREADING RESISTANCE]

APPARATUS

EXPERIMENTAL

40
66N1 Nealey, C. C, C. W. Laakso, and P. J. Hagon

PLANAR SILICON DEVICE ANALYSES WITH THE ELECTRON PROBE

MICROANALYZER

The Electron Microprobe, T. D. McKinley, K. F. J. Heinrich,

and D. B. Wittry, Eds., John Wiley and Sons, New York, 1966,

pp. 748-783. (PA:67-24191)

IMPURITY CONCENTRATION, CRYSTAL PERFECTION, SURFACE, JUNCTION

Si

[ELECTRON MICROPROBE]

EXPERIMENTAL

66S1 Sikorski, S.

DEMBER EFFECT IN AN INHOMOGENEOUS SEMICONDUCTOR AND BULK

PHOTOVOLTAIC EFFECT

Arch. Elektrotech. , vol. 15, pp. 703-723, 1966 (in Polish)

RESISTIVITY

PHOTOVOLTAIC

THEORETICAL

66W1 Wittry, D. B.

CATHODOLUMINESCENCE AND IMPURITY VARIATIONS IN Te-DOPED

GaAs

Appl. Phys. Letters, vol. 8, pp. 142-144, March 15, 1966

(PA:66-21789)

IMPURITY CONCENTRATION

GaAs

ELECTRON MICROPROBE

EXPERIMENTAL ANALYSIS

66Z1 Zaininger, K.. H.

AUTOMATIC DISPLAY OF MIS CAPACITANCE VERSUS BIAS

CHARACTERISTICS

RCA Rev,, vol. 27, pp. 341-359, September 1966.

(EA:67-2123)

SURFACE

Si

C VS V

APPARATUS

EXPERIMENTAL

66Z2 Zrudsky, D. R. , H. D. Bush, and J. R. Fassett

FOUR POINT SHEET RESISTIVITY TECHNIQUE

Rev. Sci. Instrum., vol. 37, pp. 885-890, July 1966

(PA:66-27672)

RESISTIVITY

FOUR-POINT

APPARATUS

EXPERIMENTAL

41
1967

"

67A1 Authier A.

CONTRAST OF DISLOCATION IMAGES IN X-RAY TRANSMISSION

TOPOGRAPHY

Advances in X-Ray Analysis, vol. 10, J. B. Newkirk and

G. R. Mallett, Eds., Plenum Press, New York, 1967,

pp. 9-31.

CRYSTAL PERFECTION

X-RAY TOPOGRAPHY

REVIEW

67A2 American Society for Testing and Materials

TENTATIVE METHODS OF TEST FOR BULK SEMICONDUCTOR RADIAL

RESISTIVITY VARIATION

1967 Book of Standards, Part 8. To be published by

American Soc. for Testing and Materials, Philadelphia.

RESISTIVITY

TWO -POINT, FOUR -POINT

GENERAL PROCEDURES

EXPERIMENTAL ANALYSIS

67A3 Austerman, S. B., and J. B. Newkirk

EXPERIMENTAL PROCEDURES IN X-RAY DIFFRACTION TOPOGRAPHY

Advances in X-Ray Analysis,

G. R. Mallett, Eds., Plenum

pp. 134-152.

CRYSTAL PERFECTION

X-RAY TOPOGRAPHY

GENERAL PROCEDURES

REVIEW

vol. 10, J. B. Newkirk and

Press, New York, 1967,

67B1 Bonse, U. K., M. Hart, and J. B. Newkirk

X-RAY DIFFRACTION TOPOGRAPHY

Advances in X-Ray Analysis, vol. 10, J. B. Newkirk and

G. R. Mallett, Eds., Plenum Press, New York, 1967, pp. 1 CRYSTAL PERFECTION

X-RAY TOPOGRAPHY

REVIEW

67C1 Carron, G. J.

X-RAY TOPOGRAPHIC CAMERA

Rev. Sci Instrum. , vol. 38

(PA:67-29341)

CRYSTAL PERFECTION

Si

X-RAY TOPOGRAPHY

APPARATUS

EXPERIMENTAL

pp. 628-631, May 1967.

42
67C2 Casey, H. C. Jr., and R. H. Kaiser

ANALYSIS OF N-TYPE GaAs WITH ELECTRON-BEAM-EXCITED

RADIATIVE RECOMBINATION

J. Electrochem. Soc, vol. 114, pp. 149-153, January

February 1967. (EA: 67-10423)

IMPURITY CONCENTRATION

GaAs

ELECTRON MICROPROBE

APPARATUS

EXPERIMENTAL ANALYSIS

67D1 Dilatush, E.

MICROPROBE PROMISES BETTER SEMICONDUCTOR DEVICES

Electrical Design News, vol. 12, pp. 56-58, September 6,

1967.

RESISTIVITY, PROFILE

GaAs

TWO -POINT

APPARATUS

EXPERIMENTAL

67D2 Dionne, G.

HIGH-RESOLUTION X-RAY - DIFFRACTION TOPOGRAPHY USING K.

RADIATION p J. Appl. Phys., vol. 38, pp. 4094-4096, September 1967.

CRYSTAL PERFECTION

Si

X-RAY TOPOGRAPHY

EXPERIMENTAL

67D3 Decker, D. R. <• MEASUREMENT OF EPITAXIAL DOPING DENSITY VERSUS DEPTH

J. of Electrochem. Soc, vol. 114, p. 63C, abstract no. 96,

March 1967.

IMPURITY CONCENTRATION, JUNCTION

Si

C VS V

EXPERIMENTAL ANALYSIS

67E1 Esposito, R. M. , J. J. Loferski, and H. Flicker

CONCERNING THE POSSIBILITY OF OBSERVING LIFETIME - GRADIENT AND DEMBER PHOTOVOLTAGES IN SEMICONDUCTORS

J. Appl. Phys., vol. 38, pp. 825-831, February 1967.

LIFETIME

Ge, Si

PHOTOVOLTAIC

EXPERIMENTAL ANALYSIS

67F1 Frank, H., and S. A. Azim

MEASUREMENT OF DIFFUSION PROFILE OF Zn IN N-TYPE GaAs BY A

SPREADING RESISTANCE TECHNIQUE

Solid-State Electronics, vol. 10, pp. 727-728, July 1967.

CARRIER CONCENTRATION, JUNCTION

GaAs

SPREADING RESISTANCE

CONTACTS

EXPERIMENTAL ANALYSIS

43
67H1 Haisty, R. W.

ELECTRODELESS MEASUREMENT OF RESISTIVITIES OVER A VERY

WIDE RANGE

Rev. Sci. Instrum., vol. 38, pp. 262-265, February 1967.

(EA:67-18679)

RESISTIVITY

Ge

IMPEDANCE

APPARATUS

EXPERIMENTAL

67H2 Haberer, J. R. PHOTORESPONSE MAPPING OF SEMICONDUCTORS

Physics of Failure in Electronics, vol. 5, RADC Series in

Reliability, T. S. Shilliday and J. Vaccaro, Ed., 1967,

pp. 51-82. AD 655 397

SURFACE

Si

LIGHT MICROPROBE

APPARATUS

EXPERIMENTAL

67J1 Juleff, E. M., A. G. Lapierre, III, and R. G. Wolfson

THE ANALYSIS OF BERG - BARRETT SKEW REFLECTIONS AND THEIR

APPLICATIONS IN THE OBSERVATION OF PROCESS- INDUCED

IMPERFECTIONS IN (111) SILICON WAFERS

Advances in X-Ray Analysis, vol. 10, J. B. Newkirk and

G. R. Mallett, Eds., Plenum Press, New York, 1967,

pp. 173-184.

CRYSTAL PERFECTION

Si

X-RAY TOPOGRAPHY

EXPERIMENTAL ANALYSIS

67L1 Lehner, H. H.

PROBING TECHNIQUE FOR MEASURING THE POTENTIAL DISTRIBUTION

IN SEMICONDUCTORS

Rev. Sci. Instrum., vol. 38, pp. 699-700, May 1967.

(PA:67-29786)

RESISTIVITY, JUNCTION

GaAs

TWO -POINT

APPARATUS

EXPERIMENTAL

67M1 Mazur, R. G.

RESISTIVITY INHOMOGENEITIES IN SILICON CRYSTALS

J. Electrochem. Soc, vol. 114, pp. 255-259, March 1967.

(EA:67-20978)

RESISTIVITY

Si

SPREADING RESISTANCE

EXPERIMENTAL

44
67P1 Potter, C. N., and D. E. Sawyer

OPTICAL SCANNING TECHNIQUES FOR SEMICONDUCTOR DEVICE

SCREENING AND IDENTIFICATION OF SURFACE AND JUNCTION

PHENOMENA

Physics of Failure in Electronics, vol. 5, RADC Series in

Reliability, T. S. Shilliday and J. Vaccaro, Eds., 1967,

pp. 37-50. AD 655 397

SURFACE

Si

LIGHT MICROPROBE

APPARATUS

EXPERIMENTAL

67T1 Thornton, P. R. , K. A. Hughes, Htin Kyaw, C. Millward,

and D. V. Sulway

FAILURE ANALYSIS OF MICROCIRCUITRY BY SCANNING ELECTRON

MICROSCOPY

Microelectronics and Reliability, vol. 6, pp. 9-16,

February 1967. (EA:67-9145)

SURFACE

Si

ELECTRON MICROPROBE

EXPERIMENTAL

67T2 Tihanyi, J., and G. Pasztor

OBSERVATION OF SURFACE PHENOMENA ON SEMICONDUCTOR DEVICES

BY A LIGHT SPOT SCANNING METHOD

Solid-State Electronics, vol. 10, pp. 235-239, March 1967.

(PA:67-17994)

SURFACE

Si

LIGHT MICROPROBE

APPARATUS

EXPERIMENTAL

45

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