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Technical Prdcress Bulletin

U S. DEPARTMENT OF COMMERCE

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

Gaithersburg, Maryland 20899

Covering Center Programs, July - September 1983

April 1984

Issued June 1984

J.S. DEPARTMENT OF COMMERCE

iijJ NATIONAL BUREAU OF STANDARDS

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INTRODUCTION TO APRIL 1984 (2) ISSUE OF THE CEEE TECHNICAL PROGRESS BULLETIN

This is the fourth issue of a quarterly abstract journal covering the work of the

National Bureau of Standards Center for Electronics and Electrical Engineering. This

issue of the CEEE Technical Progress Bulletin covers the third quarter of calendar

year 1983.

ORGANIZATION : Abstracts and citations are arranged by technical topic as identified

in the table of contents and alphabetically by first author under each subheading

within each topic. Each abstract ends with a telephone number of the individual to

contact for more information on the topic; unless otherwise noted, this individual is

the first author. Each citation ends with identification of the issue of the

Technical Progress Bulletin in which the associated abstract appeared. This issue

also includes a calendar of Center conferences and workshops for the remainder of

calendar year 1984, an announcement of newly released standard reference materials,

and a list of sponsors of the work. SPECIAL NOTE: Because the four issues covering

calendar year 1983 are later than intended, the contents of these issues will differ

from the original plan of providing abstracts for all papers approved by NBS in a quarter as follows: Each issue will contain (1) abstracts of papers approved for

publication by NBS for the appropriate quarter and not subsequently published until

calendar year 1984, (2) abstracts of papers approved and published during the

quarter, and (3) citations for papers published during the quarter, but for which

abstracts have appeared in an earlier issue of the Technical Progress Bulletin . Items in category (1) appear under the subheading "Approved for Publication"; items

in categories (2) and (3) appear under the subheading "Recently Published."

Center for Electronics and Electrical Engineering : Center programs provide national

ref erence standards , measurement methods , supporting theory and data, and

traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U. S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor

Technology Program, carried out by the Semiconductor Materials and Processes and

Semiconductor Devices and Circuits Divisions in Gaithersburg, MD, and the Signals and

Systems Metrology Program, carried out by the Electrosystems Division in Gaithersburg

and the Electromagnetic Fields and Electromagnetic Technology Divisions in Boulder,

CO. Key contacts in the Center are given on the back cover; readers are encouraged

to contact any of these individuals for further information.

Previous special issues : Two special issues of the Technical Progress Bulletin have

been published with abstracts for the Signals and Systems Program only, NBSIR 83 - 2719-1, covering October 1981 through March 1982 and NBSIR 83- 2719- 2 , covering April

1982 through September 1982 . NBSIR 82- 2636 , a special issue of the Semiconductor

Technology Program Progress Briefs published in January 1983 , listed abstracts of

publications from that Program for Federal fiscal year 1982 (October 1981 through

September 1982, fifty-third through fifty-seventh quarters of the Program). The new CEEE Technical Progress Bulletin replaces the Progress Briefs series [single copies

of 82-2636 are available from the Center, see back cover for address!.

Center sponsors : The Center Programs are sponsored by the National Bureau of

Standards and a number of other organizations, in both the Federal and private

sectors; these are identified on page 11.
national bureau

OF STANDARDS

LISRARY

CEEE Technical Progress Bulletin - April 84 (2) Page 1

TABLE OF CONTENTS

INTRODUCTION inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM

Silicon Materials 2 Analysis Techniques . 2

Integrated Circuit Test Structures

Process & Device Modeling 3

Other Semiconductor Metrology 4

SIGNALS AND SYSTEMS METROLOGY PROGRAM

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION 4

Waveform Metrology 4

Microwave & Millimeter-Wave Metrology 5 Optical Fiber Metrology 5 Other Fast Signal Topics 6

ELECTRICAL SYSTEMS 6

Power Systems Metrology 6

Pulse Power Metrology 7 Superconductors 7 ELECTROMAGNETIC INTERFERENCE 7

CEEE CALENDAR 9

NEW STANDARD REFERENCE MATERIALS 10

SPONSOR LIST 11

KEY CONTACTS IN CENTER, CENTER ORGANIZATION back cover
Page 2 CEEE Technical Progress Bulletin - April 84 (2)

SEMICONDUCTOR TECHNOLOGY PROGRAM

Silicon Materials

Released for Publication

Baghdadi, A., Discussion on "Precise

Evaluation of Oxygen Measurements on Cz-SIllcon Wafers," submitted to J.

Electrochemical Society.

This is a discussion of a paper by

Graff, entitled "Precise Evaluation of

Oxygen Measurements on Cz-Silicon

Wafers," which was published in the

Journal of the Electrochemical Society,

Vol . 130, No. 6, p. 1378. The

equations used by Graff in his paper do

not adequately represent the physical

situation. This discussion points out

the inconsistencies in Graff's approach

to the problem.

[(301) 921-3625]

Analysis Techniques

Released for Publication

Chang, T-T., The Calibration Methods

and the Reference Materials In ESR

Spectroscopy, submitted to Magnetic

Resonance Review.

This paper reviews the calibration methods and reference materials that have

been recommended or have been in use in

ESR [electron spin resonance] spectroscopy. Methods for the measurement of

microwave frequencies and magnetic

fields are briefly mentioned. Methods

to measure the Q-f actor of a microwave

cavity are described. The calculation

and measurement of the microwave magnetic field in an ESR resonance cavity

are described in detail. Methods for

the determination of the concentration

of the paramagnetic centers in a sample

are described after a discussion of the

theoretical background. Precautions and

factors that affect the accuracy of this

determination are discussed. Reference

materials, in 16 groups, are listed.

Recipes for preparation of some of these

standard samples are also given.

[Contact: Larrabee, (301) 9°l-3786]

Recently Published

Carver, G.P., Influence of ShortChannel Effects on Dopant Profiles

Obtained from the dc MOSFET Profile

Method, IEEE Trans, on Electron

Devices, ED-30, pp. 948-954 (August

1983).

Distortions in the dopant density profile obtained from dc MOSFET measure- ments due to short-channel effects are

not properly predicted by present twodimensional charge sharing, or charge

conservation, models. The comparison of

dopant profile data with predictions

based on charge conservation models is a powerful technique for evaluating the

accuracy of these models.

[(301) 921-3786]

Integrated Circuit Test Structures

Recently Published

Mattis, R.L., Semiconductor Measurement Technology: A FORTRAN Program for

Analysis of Data from Microelectronic

Test Structures, NBS Special Publication 400-75 (July 1983).

A computer program, STAT2, is described

which performs the following functions:

reads data as a two-dimensional array;

calculates mean, sample standard deviation, and median; identifies outliers;

calculates replacement values for outliers; makes gray-tone, numerical and

contour data maps on a line printer;

makes a numerical map on the user's

terminal; makes a histogram on a line

printer; constructs a data base for

examining correlations among various

data sets; and searches the data base

for correlations using several selective

keys. The emphasis is on program usage,

and detailed descriptions of the

commands are given. Data input

requirements are addressed. Guidance

regarding several types of program

modifications is provided.

[(301) 921-3621]
CEEE Technical Progress Bulletin - April 84 (2) Page 3

Process & Device Modeling

Released for Publication

Rennett, H.S., Dependence of Minority

Carrier Lifetime on Doping Density In

Heavily Doped Silicon, submitted to

Solid-State Electronics.

The minority carriers determine the

essential electrical characteristics of

bipolar devices and bipolar-like parasitic paths in field effect devices.

The electrical behavior of such devices

is frequently described by detailed

device models. Among the several input

parameters for detailed device models,

the dependences of the minority carrier

lifetimes as functions of doping density

have great uncertainty. Recent results

from scattering theory for bandgap nar- rowing and Fermi energy as functions of

doping density are included in the

Shockl ey-Read-Hal 1 expressions for the

minority carrier lifetimes. The predicted lifetimes are concave from above

with increasing doping for those processing conditions under which the

doping and defect densities are not

correlated strongly, whereas empirical

expressions for the Shockl ey-Read-Hal

1

lifetimes are convex with increasing

doping density. Quantitative comparisons between theory and experiment are

not possible because measurements of

lifetime versus doping density have

uncertainties associated with the separation of the Shockl ey-Read-Hall and

Auger recombination mechanisms. A major

finding of this research is that improved measurements are needed for

minority carrier lifetime in heavily

doped silicon as a function of doping

density.

[(301) 921-35411

Roitman, P. , Albers, J., and Myers,

D.R., An Investigation of the TwoDimensional Shape of Ion-Implanted

Regions, submitted to J. Applied

Physics

.

The two-dimensional shape of arsenic

ion-implanted regions in single-crystal

silicon was investigated both experimentally and theoretically. Experimentally, two techniques were shown to have

the necessary submicron resolution: a junction etch process and an SEM-induced

current collection method. A comparison

of junction depths determined by the

etch technique and the EBIC techniques

with the depths calculated using several

amorphous target codes was made. For

the case of low temperature (600°C)

anneals, the etch technique agrees very

well with the junction depths predicted

by the amorphous target code due to

Winterbon. The lateral junction locations obtained from the etch technique

are in good agreement with the predictions of a two-dimensional Monte Carlo

code (TRIM) which indicates that the

arsenic does not show any significant

lateral scattering under mask edges.

For the high temperature (1000°C) an- neals, the etch and EBIC techniques

agree with each other. Comparison with

arsenic-diffusion models shows that

concentration-dependent effects are

important.

[(301) 921-3621]

Recently Published

Bennett, H.S., Improved Concepts for

Predicting the Electrical Behavior of

Bipolar Structures in Silicon, IEEE

Trans. Electron Devices, ED-30,

pp. 920-927 (August 1983).

Most bipolar device models, based upon

doping profiles and upon numerical solutions to coupled, nonlinear equations

for semiconductor devices, contain em- pirical methods for computing the effective intrinsic carrier concentration,

n-j e , mobility, and lifetime. These

methods usually are based upon electrical measurements, assume that the majority hole (electron) mobility equals the

minority hole (electron) mobility at

high doping densities, use Boltzmann

statistics, and assume that the carrier

lifetime is much greater than the car- rier transit time. More physically

correct concepts are reported in this

paper and are applied to bipolar
Page 4 CEEE Technical Progress Bulletin - April 84 (2)

Process ft Device Modeling , cont'd.

transistors in silicon. These concepts

use the perturbed densities of states

and nonparabolic bands which arise from

a quantum mechanical description of

bandgap narrowing to compute separately

n-j e and the carrier mobility, use

minority carrier lifetimes which agree

much better with measured lifetimes in

processed silicon, and use Fermi-Dirac

statistics. When these concepts are incorporated into a device analysis code

such as SEDAN and then used to compute

the dc common-emitter gain of two npn

transistors, the predicted gains agree

very well with the measured gains. In addition, these concepts offer potential

improvements in predicting the temperature dependence of the gain.

[(301) 921-3541]

Other Semiconductor Metrology

Released for Publication

Kowalski, P., Lankford, W.F., and

Schafft, H.A., Nondestructive Measurement of Solar Cell Sheet Resistance

Using a Laser Scanner, submitted to

IEEE Trans. Electron Devices.

Experimental data have shown that a laser scanner can be used as a probe to

make nondestructive measurements of

solar cell sheet resistance with an accuracy of several percent. The photovoltaic response from cells with con- trolled sheet resistance was measured

using the scanner and compared with the

theoretical predictions made by other

workers. Several limitations in this

technique are identified and a measurement methodology is suggested.

[Contact: Schafft, (301) 921-3621]

FAST SIGNAL ACQUISITION, PROCESSING,

AND TRANSMISSION

Waveform Metrology

Released for Publication

Nahman, N.S., Status and Future

Directions of Picosecond Domain

Waveform Standard, to be published as Chapter 2 in book. Time Domain

Measurements in Electromagnetics.

This is Chapter 2 of the book "Time

Domain Measurements in Electromagnetics", E.K. Miller, Editor, to be

published in 1984. A review of the

state-of-the-art of picosecond time

domain waveform measurements is

presented which includes measurements in

both the electrical and optical regions

of the electromagnetic spectrum. This

review is the latest edition of a series

of reviews on high speed pulse

measurements compiled by the author

since 1967 [1-3]. 130 references, 11

figures, and 4 tables.

[(303) 497-5167]

Stenbakken, G.N., A Wideband Sampling

Wattmeter, submitted to IEEE Trans.

Power Apparatus & Systems.

The design and operation of a wideband

sampling wattmeter capable of measuring

distorted power signals with fundamental

frequencies from 1 Hz to 10 kHz and

harmonics up to 100 kHz is described.

The microprocessor controlled wattmeter

uses asynchronous sampling of the voltage and current signals. The errors associated with this type of operation

are described as are various methods of

correcting some of these errors. The

wattmeter uses both a hardware multiplier-accumulator and a direct-memoryaccess unit to capture the data. Programmable time delay circuits are used

to compensate for differential time

delays between the input channels.

Performance checks show that measurement

uncertainties of less than ±0.1 percent

of full-scale range are obtainable.

[(301) 921-2727]

Recently Published

Bell, B.A. and Perrey, A.G., Peak

Conductance Measurements of GaAs

Switching Devices, Proc. SP IE - The

International Society for Optical
CEEE Technical Progress Bulletin - April 84 (2)

Waveform Metrology, cont 'if." ' 6

r

' 6(l 2 —b$B f voiq <02 10 TS ± oJ b9 drmrr 9d yam Jr

Engineering, 439, pp. 128-|39,~ SPIE, . P.O. Box 20, Bellingham, WA 98227

(1983) [conference San Diego, CA,

August 24-26, 1983]. * duode sb990X9

. Jrmr

r

This paper describes the test apparatus

and circuitry used to make measurements

of pulsed light conductance on samples

of high resistivity (1

0

7 JAjaWftlv

arsenide switching devices, having nominal 25-um and 700-ym gap spacings.

Differences in conductance are observed

on variously grown samples. Maximum

peak light conductance obfafnfed was -2

millisiemens for an effective irradiated

optical power on the (25-ym) gap ; of

approximately 130 milliwatts (X 4?

850 nm). Comparisons are made between

the observed pulse measurements and the

pulse waveforms generated by computer

simulation using a model based on a theoretical analysis of the relationships between photoconductance and

irradiated optical power. 9d* >td b9rmoT

[(9®H) U69i u8 ranorJaH 9dJ

moni borneq 9dJ znevoo b9dno29b >how

Scboenwetter,n9 te&5P A6 Voltage Call^

brat Ions for the 0.1 Hz to 10 Hz Frequency Range, NBS Tech. Note 1182

(September 1983)2.6m bnB onSos\e sH 03

9rl j t 29rJrr'ro6T 9Tuaoqx9 raorporord

The development of voltmeters to meet

the need for rms voltage measurements in

the infrasonic frequency range is

discussed as well as the need to trace

these measurements to the U.S. legal

unit of voltage. A new method for J supporting voltage measurements in the

0.1 Hz range was described in a 1979

paper and is discussed further. The

principles of the method are embodied in

detailed procedures given for

calibrating sine-wave voltage standards

and rms voltmeters over the frequency

range 0.1 to 10 Hz, using the NBS AC

Voltmeter/Cal ibrator. The sine-wave c calibrator of this instrument, used for

these calibrations, has an accuracy of

0.020 percent over the 0.5-mV to 7-V

raWjk!u269M nol pnf-Jeurev3 ioT 9pT6r10

[(301) 921-2727]

t S0I-2A9 t 2m9J2y2 A zuJanaqqA

Page 5

Microwave and Millimeter-Wave Metrology

To 9mo2 -Recently Published

29pe Jnavbaz rb Dne 29 paJn 6 vba

Kamper, R.A. and Hoer, C.A., Millimeter Nave Standards at the National

Bureau of Standards (NBS), Proc. SPIE

- The International Society for Optical

Engineering, 423, pp. 144-146, SPIE,

P.O. Box 20, Bellingham, WA 98227

(1983) [conference San Diego, CA,

August? 22-24, 1983].

t .0.0 * n 9 s n 6 n 3 bn6 f .W.f

This paper describes briefly the standards and measurement systems that are maintained at NBS to provide calibration

service in the ranges 26 to 40 GHz, 55

to 65 GHz, and at 95 GHz. The measurement systems range in degree of automation from manually tuned reflectometer

and attenuation measurement systems to

automated single and dual six-ports.

Plans to complete the coverage of the

range from 26 GHz to 75 GHz and to

extend the range beyond 100 GHz are discussed.

[(303) 497-3535]

dJrw b 9 J 69 no 9 T 9 w 2pnro6q2 JosJn(

Optical Fiber ~ Metrology

" 1 Recently Published

9*19W ZfiJbrW 9200q29'i 92 luqml

Day, G.W., Birefringence Measurements

In Single Mode Optical Fiber, Proc.

SPIE - The International Society for

Optical Engineering, 425, pp. 72-79,

SPIE, P.O. Box 20, Bellingham, WA

98227 (1983) [conference San Diego, CA,

August 22-24, 1983].

Because their cores are not perfectly

circular or because of stress, Inherent

to the structure or externally applied,

practical single-mode fibers are birefringent. These sources of birefringence are reviewed briefly. A simple

model for the fiber consists of a combination of one linearly birefringent

element and one circularly birefringent

element. Depending on the magnitude of

the birefringence, different techniques

of evaluating the parameters of the

model may be suitable. Several methods

appropriate for fibers of low and high
Page 6 CEEE Technical Progress Bulletin - April 84 (2)

Optical Fiber Metrology , cont'd.

birefringence are described and some of

their advantages and disadvantages

outl ined.

r ( 303) 497-52041

Other Fast Signal Topics

Recently Published

Phelan, R.J., Larson, D. , Frederick,

N.W., and Franzen, D . G . , Submicrometer Interdigital Silicon

Detectors for the Measurement of

Picosecond Optical Pulses, Proc.

SPIE - The International Society for

Optical Engineering, 425 (Single Mode

Optical Fibers), pp. 207-211, SPIE,

P.0. Box 20, Bellingham, WA 98227(1983)

[conference August 22-24, 1983]

.

Interdigital silicon Schottky barrier

diodes have been evaluated for

picosecond pulse measurements.

Structures with clearly defined

receiving apertures and submicrometer

contact spacings were created with

electron beam lithography. The

detectors exhibit saturation currents

corresponding to the absorbed optical

power. Impulse response widths were

less than 50 ps, and response maps

yielded uniform patterns. A peak

quantum efficiency of over 30 percent

was obtained, and the usable spectral

responsivity extends beyond 2 m. [(303) 497-3696]

Young, M., Llnewldth Measurement by

High-Pass Filtering—A New Look, Applied Optics, 22, No. 13, pp. 2022-

2025 (1 July 1983).

Earlier workers have noticed that highpass filtering produces a sharp dark

line in precisely the location of the

geometrical image of an edge. They

proposed using this fact as an aid in

measuring linewidth in microscopy but

found that the other edge of the line

caused significant error. In this

paper, I examine that error as a function of normalized linewidth and normalized spatial -filter width and find that

it may be limited to ±5% or so, provided

that the spatial filter subtends between

0.25 and 0.3X the numerical aperture of

the objective and that the linewidth

exceeds about twice the resolution

1 imit.

[(303) 497-3223]

ELECTRICAL SYSTEMS

Power Systems Metrology

Recently Published

Hebner, R.E., Development of Power

System Measurements — Quarterly Report

October 1, 1982 to December 31, 1982,

NBSIR 83-2755 (September 1983).

This report documents the progress on five technical investigations sponsored

by the Department of Energy and performed by the Electrosystems Division,

the National Bureau of Standards. The

work described covers the period from

October 1, 1982 to December 31, 1982.

The report emphasizes the calibration of

instruments designed to measure the

60 Hz electric and magnetic fields in

biological exposure facilities, the

measurement of the rate of decomposition

of SFg in positive dc-corona

discharges, and in the measurement of

space charge in transformer oil between

100°C and 150°C.

[(301) 921-3121]

Kelley, E.F. and Hebner, R.E.,

Electro-Optic Measurement of the

Electric Field Distribution In

Transformer Oil, IEEE Trans. Power

Apparatus & Systems, PAS-102, No. 7,

pp. 2092-2097 (July 1983) [abstract

appeared on page 7 of May 1983 TPB

(NBSIR 83-2719-1].

McKnight, R.H. and Kotter, F.R., A

Facility to Produce Uniform Space

Charge for Evaluating Ion Measuring

Instruments, IEEE Trans. Power

Apparatus A Systems, PAS-102,
CEEE Technical Progress Bulletin - April 84 (2) Page 7

Power Systems Metrology , cont'd.

pp. 2349-2357 (July 1983) [abstract

appeared on page 16 of July 1983 TPB

( NRSIR 83-2719-3)].

Ramboz, J.D. and McAuliff, R.C., A

Calibration Service for Wattmeters and

Watthour Meters, NBS Technical Note

1179 (July 1983).

An NBS calibration service for wattmeters and watthour meters is described.

The service offers measurements of percentage registration for watthour meters

and percentage correction for wattmeters

over a range of voltages and currents at

a frequency of 60 Hz. Measurements are limited to power factors of 1.0 and 0.5,

leading and lagging. The Measurement

Assurance Program (MAP) for electric

energy is discussed. National standards

for electric energy, NBS services,

special equipment and instruments, and

measurement methods and procedures are described as are error estimates and

quality control. A representative

Report of Calibration is included.

[ ( 301) 921-3121]

Pulse Power Metrology

Recently Published

McKnight, R.H. and Schoenwetter, H.K.,

Evaluation of Transient Measurement

Methods in Gas-Insulated Transmission

Lines, NBSIR 83-2753, (August 1983).

Capacitive sensors suitable for mea- suring transients in gas-insulated

transmission lines have been studied in

the laboratory. Measurements of the

step response of three different sensors were made with a test line using both

low voltage (200 V) and high voltage

(10 kV) signals. Sensor designs were

based on those used in pulse power mea- surements. The use of active

electronics at the sensor output in the

form of fast buffer amplifiers or commercial FET input probes was

investigated as a means of extending low

frequency cutoff. Lumped parameter

models were used to provide theoretical

analysis of experimental results.

[(301) 921-3121]

Superconductors

Recently Published

Fickett, F.R., Conductors for Advanced

Energy Systems Annual Report 1982,

INCRA Research Report, Paper No. 321A,

pp. 1-97, International Copper Research

Association, 708 3rd Ave., New York, NY

10017 (August 1983).

The coppers that are almost always

chosen for stabilizing superconductors

are the oxygen-free grades, usually CDA

102 in the U.S. Since the copper

undergoes considerable deformation and

thermal treatment in the production of

the conductor, it is essential that

information be available that will allow

the magnet designers to determine the

amount of copper required for optimum

protection and maximum current density.

It is this problem that is addressed in

the experimental program reported here.

Data are presented on the resistance and

magneto-resistance at 4 K of various

coppers and how these parameters are affected by temper, anneal, and strains

induced by several methods.

[(303) 497-3785]

ELECTROMAGNETIC INTERFERENCE

Recently Published

Bensema, W.D., Handbook for Broadband

Isotropic Antenna System Volume 1 -- Operations Manual, NBSIR 83-1693

(July 1983).

This manual described the equipment,

operation, and maintenance procedures to

support the broadband isotropic antenna

system developed by the National Bureau

of Standards for making EMI measurements

in the frequency range from 10 kHz to

18 GHz. [The term "isotropic" as uspd

in this handbook refers to the ability

of the system to synthesize an isotropic
Page 8 CEEE Technical Progress Bulletin - April 84 (2)

Electromagnetic Interference , cont'd.

response from several measurements,

rather than to the pattern of a single

antenna structure.]

The system uses isotropic broadband

antennas, a low power microcomputer,

antenna switching units, commercially

available receivers, and associated

cabling. The system automatically

switches antenna elements, computes the

total scalar sum of the existing field

strength, and automatically logs time,

frequency, signal strength, and system

configuration. The system reduces the

number of personnel required to make

searches for EMI, and includes a mode

for unmanned monitoring.

[(303) 497-3465]

Crawford, M.L., Comparison of OpenField, Anechoic Chamber and TEM Cell

Facilities/Techniques for Performing

Electromagnetic Radiated Emissions

Measurements, Record, IEEE 1983

International Symposium on Electromagnetic Compatibility, pp. 413-418

(1983) [conference Arlington, VA,

August 23-25].

This paper compares the results of mea- surements performed at discrete frequencies between 30 MHz to 300 MHz using a spherical dipole reference standard

radiator to evaluate: 1) a (6.0 x 9.0)-m ground screen open-field

site, 2) a (3.0 x 4.88 x 6.1)-m

anechoically quieted shielded enclosure,

and 3) a (2.8 x 2.8 x 5.6)-m

anechoically quieted TEM cell for use in

measuring radiated rf emissions from

electronic equipment. The paper briefly

describes each facility, the test

techniques, and the test configuration

used. The results given provide a comparison of the radiated measurement

uncertainty anticipated from a point source radiator for each facility, when

all known correction factors (assuming

far-field conditions) are applied.

[(303) 497-5497]

FitzGerrell, R.G., E-Fields Over

Ground, Record, IEEE 1983 Tntornat ional Symposium on JtL.l \j .

. ^

i iti c i c Compat i bi 1 i ty , pp. 6-9 (1983)

[conference Arlington, VA,

August 23-25],

Equations from a classic paper by

K.A. Norton are used to generate plots

of electric field strengths versus distance, at fixed heights above ground,

from horizontal and vertical dipole

antennas. These data are used to estimate the strength and pattern of electric fields over plane perfect and

imperfect ground test sites. A preliminary measurement effort, designed with

the aid of these calculated data, indicates that the half-wave dipole antenna

factor is essentially independent of

distance from short, horizontal dipole.

E-field sources over a plane metal

ground screen at separation distances of

1 to 10 m over the frequency range 30 to

1000 MHz. Measured data also show the

influence of the transmission line on the vertically polarized dipole antenna

factor and source antenna E-field

combined (combined because measurements

cannot separate transmission line

effects on dipole input impedance and

antenna pattern)

.

[(303) 497-3737]

Liu, B-H., Chang, O.C., and Ma, M.T.,

Design Consideration of Reverberating

Chambers for Electromagnetic Interfer- ence Measurements, Record, IEEE 1983

International Symposium on Electromagnetic Compatibility, pp. 508-512 (1983)

[conference Arlington, VA,

August 23-25].

Two aspects pertaining to the design of

rectangular, mode-stirred or mode-tuned

reverberating chambers are considered in

this paper, namely the spectral distribution of resonant modes and the composite quality factor of the chamber.

After obtaining the total number of

eigenmodes with eigenfrequencies less

than or equal to any given value and an exact expression for the mode density,

the solution of the total number of

modes is seen to consist of smooth and
CEEE Technical Progress Bulletin - April 84 (2) Page 9

Electromagnetic Interference , cont'd.

fluctuating parts. Then simple criteria

are identified for designing this shape

of the chamber. To take into account

the conductor loss of the walls, a simple, closed-form composite quality

factor is also proposed. These results

are useful as design guidelines of

reverberati ng chambers.

[(303) 497-38001

Liu, 8-H., Chang, D.C., and Ma, M.T.,

Eigenmodes and the Composite Quality

Factor of a Reverberating Chamber,

NBS Technical Note 1066 (August 1983).

The total number N of electromagnetic

eigenmodes, with eigenfrequencies not

greater than some given value, which can exist inside a rectangular mode-stirred

or mode-tuned reverberating chamber is

important in that it reveals how many

modes can be available at an operating

frequency for the "stirring" or tuning

purpose. This is calculated analytically via a lattice-point counting technique in the k-space (k = wave number),

leading to an exact expression for N,

which can be split into a smooth component and a fluctuating part. The former

contains, in addition to Weyl's volume

term, an edge term as a second-order

correction. The latter is sensitive to

the dimensions of the chamber. Simple

design criteria are then derived in view

of the number of available modes and the

uniformity of their distribution. To

take into account the ohmic loss in

metal walls of the chamber, a composite

Q-factor is also proposed for design

purposes. This is achieved by taking a suitable average of 1/Q-values of all

possible modes within a small frequency

interval. Comparison with numerical Qvalues for individual modes shows that

the composite Q can be used as a practical design parameter.

[Contact: Ma, (303) 497-3800]

Wilson, P.F., Chang, D.C., Ma, M.T.,

and Crawford, M.L., Theoretical and

Experimental Analysis of Coupling Characteristics of Dual TEM Cells,

Record, IEEE 1983 International

Symposium on Electromagnetic Compatibility, pp. 513-517 (1983) [conference

Arlington, VA, August 23-25],

A standardized method for quantitatively

evaluating a test material's shielding

effectiveness is a topic of widespread

interest to the electromagnetic interference community. Field penetration

through materials may significantly

affect the designed performance of devices contained inside the material. To

take advantage of the known properties

of a TEM cell, a shielding effectiveness

measurement procedure based on coupling

power between a pair of TEM cells via a material-laden aperture is being proposed in industry. No theoretical

basis, however, has been formulated to

provide guidelines for properly designing such a dual TEM cell structure and

for interpreting the measured results.

The theoretical analysis of, and

experimental results for, an unloaded

aperture case (i.e., with no material

present) are presented to provide a better understanding of the structure's

basic properties.

[(303) 497-3842].

CEEE CALENDAR

1984

April 30 - May 4 (Boulder, CO)

NBS Noise Measurement Seminar. The

course is intended for practicing noise

metrologists and technical managers

responsible for systems for which

accurate noise measurements are

important. The seminar introduces and

describes reference noise sources, noise

measuring systems, and the problems of

characterizing and measuring noise in

passive components, amplifiers, and

satellite earth terminals. Class

examples will specifically address the

measurement of noise power; amplifier

noise; and antenna system noise,

including measures such as noise

equivalent flux, the ratio of system
Page 10 CEEE Technical Progress Bulletin - April 84 (2)

CEEE CALENDAR, cont'd.

gain to system noise temperature G/T,

and the ratio of carrier power to noise

density C/kT.

The course will cover both theory and

practice of precision noise measurements; the practical lectures are

designed to stand alone and to be

understood by those having minimal

mathematical background.

[Contact: Sunchana Perera (303)

497-3546]

June 18-21 (Gaithersburg, MD)

Power Electronics Specialists

Conference. Co-sponsored by the

Power Electronics Council of the

Institute of Electrical and Electronics

Engineers and the National Bureau of

Standards, the Conference is intended to

provide a. venue where specialists in

circuits, systems, electron devices,

magnetics, control theory, instrumentation, and power engineering may

discuss new ideas, research,

development, applications, and the

latest advances in power electronics.

The Conference will incorporate six

technical sessions (on converter

circuits, converter systems, converter

control, motor drives, power components,

and modeling and analysis techniques),

a one-day tutorial on Electromagnetic

Compatibility in Power Systems, and

three special "rap sessions" (EMI, RFI,

and Noise: Fact or Fiction; Emerging

Power Semiconductors: Positive and

Negative Attributes; and Future Trends

in Aircraft Power Electronics and

Electrical Actuators).

[Contact: Sandra B. Kelley (301)

921-3541]

August 28-30 (Vail, CO)

Short Course on Optical Fiber

Measurements. This course is

addressed to scientists and engineers

who are involved in fiber

characterization. The course will

emphasize concepts, techniques, and

apparatus used in measuring the

engineering parameters of

telecommunication-grade fibers. A

degree in electrical engineering or physics is assumed. The course will

last three days with 18 hours of class

time.

[Contact: Robert L. Gallawa (303)

497-3761]

October 15-17 (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers. The Symposium is the

principal forum for the exchange of

information on the physics and

technology of materials for high-power

lasers. Topics to be discussed include

new materials, bulk damage phenomena,

surface and thin film damage, design

considerations for high-power systems,

and fundamental mechanisms of laserinduced damage. The series of

conference proceedings resulting from

these annual symposia has collectively

become the principal repository of

information on optics for all aspects of

high-power/high-energy lasers,

including, in addition to the subjects

given above, environmental degradation,

durability, fabrication, material growth

and deposition processes, and testing.

[Contact: Aaron A. Sanders (303)

497-5341]

NEW STANDARD REFERENCE MATERIALS

Two new Standard Reference Materials

(SRMs) for calibrating equipment used to

make spreading resistance measurements

have been released by the Semiconductor

Materials and Processes Division to the

NBS Office of Standard Reference

Materials for sale to the public. SRM

2526 applies to (lll)-oriented p-type

silicon surfaces and SRM 2527 to jlll)-

oriented n-type silicon surfaces. Each

SRM consTsts of a set of about 15
CEEE Technical Progress Bulletin - April 84 (2) Page 11

STANDARD REFERENCE MATERIALS, cont'd.

specimens (number of specimens varies

depending on availability of material of

appropriate resistivities) of silicon,

6 x 12 mm in area and mounted on beveled

metal blocks for convenient use in

calibrating commercial spreading

resistance equipment. These silicon

chips have resistivities ranging from

about 0.001 to 200 fl«cm. Slices are measured before dicing; only slices

having uniformity of resistivity within

predetermined bounds are selected. The

uncertai nti es in resistivity range

typically from 2 to 5 percent for £-type

specimens and from 4 to 10 percent for

£-type. Two companion SRMs for (110)

silicon surfaces are about to be

released (2528, p-type and 2529, _n- type)

.

Note on Publication Lists ; Guides to

earlier as well as recent work are the

publication lists covering the work of

each division. These lists are revised

and reissued on an approximately annual

basis and are available from the

originating division [publications from

the Semiconductor Technology Program are covered in a single list, available from

either Semiconductor Division].

SPONSORS OF WORK REPORTED IN THIS ISSUE

National Bureau of Standards

Department of Defense

Defense Advanced Research Project

Agency; Calibration Coordination

Group; Defense Nuclear Agency

U.S. Air Force

Bolling Air Force Base; Kirtland

AFB; Newark Air Force Station; Space

Division; Wright-Patterson AFB

U.S. Army

Aviation Research & Development

Command; Fort Huachuca; Fort Monmouth; Materials & Mechanics

Research Center; Redstone Arsenal

U.S. Navy

Aviation Logistics Center (Patuxent

River); Medical Research & Development Command; Metrology Engineering

Center (Seal Beach); Naval Air Systems Command; Naval Ship Research & Development Center; Naval Sea Systems Command; Naval Surface Weapons

Center; Naval Weapons Support Center

(Crane); Office of Naval Research

Department of Energy

Bonneville Power Administration;

Energy Systems Research; Fusion

Energy

Department of Justice

Law Enforcement Assistance

Administration

Department of Transportation

National Highway Traffic Safety

Admi ni strati on Charles Stark Draper Laboratory

Environmental Protection Agency

International Copper Research

Association

Sandia Laboratories

NBS-1 )4A (rev. 2 -ec) U.s. DEPT. OF COMM.

BIBLIOGRAPHIC DATA

SHEET (See instructions)

1. PUBLICATION OR

REPORT NO.

NBSIR 84-2857-3

2. Performing Organ. Report No. 3. Publication Date

June 1984

4. TITLE AND SUBTITLE

Center for Electronics and Electrical Engineering Technical Progress Bulletin,

Covering Center Programs July - September 1983 and Guggewte 1984 O'EEE Oalcwdag

5. AUTHOR(S)

Compiler: J. Franklin Mayo-Wells

6. PERFORMING ORGANIZATION (If joint or other than NBS. see instructions)

NATIONAL bureau of standards

DEPARTMENT OF COMMERCE

WASHINGTON, D.C. 20234

7. Contract/Grant No.

8. Type of Report & Period Covered

July - September 1983

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City. State. ZIP)

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

10. SUPPLEMENTARY NOTES

All technical information included in this document has been approved for

publication previously.

[~ j Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11. ABSTRACT (A 200-word or less factual summary of most significant information. If document includes a significant

bibliography or literature survey, mention it here)

This is the fourth issue of a quarterly abstract journal covering the work of the

National Bureau of Standards Center for Electronics and Electrical Engineering.

This issue of the CEEE Technical Progress Bulletin covers the third quarter of

calendar year 1983. Abstracts are provided by technical area for both published

papers and papers approved by NBS for publication.

12. KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolon s) antennas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers;

semiconductors; superconductors.

13. AVAILABILITY

Unl imited

| | For Official Distribution. Do Not Release to NTIS

r I Order From Superintendent of Documents, U.S. Government Printing Office, Washington, D.C.

20402.

[x] Order From National Technical Information Service (NTIS), Springfield, VA. 22161

14. NO. OF

PRINTED PAGES

15

15. Price

$7 .00

U>COmm-OC IO41.VI0
CENTER FOR

ELECTRONICS AND ELECTRICAL ENGINEERING

ELECTROSYSTEMS

DIVISION

I Applied Electrical MMeasurements

Electronic HInstrumentation and Metrology

Center (720)

ELECTROMAGNETIC

FIELDS

DIVISION

_| Fields

Antenna Systems

Metrology

Characterization H

Interference

Characterization

ELECTROMAGNETIC TECHNOLOGY

DIVISION

1 Microwave Metrology

JOptical Electronic

I Metrology

JCryoelectronics

I Metrology

Superconductors

and Magnetic

Materials

SEMICONDUCTOR

MATERIALS AND

PROCESSES

DIVISION H

Silicon Characterization H

Process Control Measurements

I Micrometrology

H

Compound

!Semiconductor HProcessing Facility

SEMICONDUCTOR DEVICESAND

ORCUITS

DIVISION

Integrated -H Circuit Test

Structures

Device end Process

Modeling

H

Device

Metrology

NBS/CEEE/FEB 84

KEY CONTACTS

Mr. Judson C. French (301) 921-3357

Dr. Alvin H. Sher (301) 921-3357

Ms. Carol P. Mullis (301) 921-3357

Director

Deputy Director

Administrative Officer

Electrosystems Division (722)

Chief

Electromagnetic Fields Division (723)

Chief

Electromagnetic Technology Division (724)

Chief Dr. Robert A. Kamper (303) 497-3535

Semiconductor Materials and Processes Division (725)

Chief Mr. Robert I. Scace (301) 921-3786

Semiconductor Devices and Circuits Division (726)

Chief Dr. Kenneth F. Galloway (301) 921-3541

Dr. Oskars Petersons (301) 921-2328

Mr. Charles K.S. Miller (303) 497-3131

INFORMATION:

For additional information on the Center for Electronics and Electrical

Engineering, write to or call:

Center for Electronics and Electrical Engineering

National Bureau of Standards

Metrology Building, Room B-358

Gaithersburg, Maryland 20899 Telephone (301) 921-3357

USCOMM-NBS-DC