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5

NBSIR 88-3748

MBS

PUBLICATIONS

Center for Electronics and , Electrical Engineering §

Technical

Publication

Announcements

Covering Center Programs,

July to September 1987, .. 14

with 1988 CEEE Events Calendar

April 1988

LJ.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Gaithersburg, Maryland 20899

-QC——

100 i

• U56 i

#88-3748

'

1988

c.2
INTRODUCTION TO THE CEEE TECHNICAL PUBLICATION ANNOUNCEMENTS

l

This is the fourteenth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and Electrical Engineering. This issue of the CEEE Technical Publication Announcements

covers the third quarter of calendar year 1987.

Organization of Bulletin : This issue contains citations and abstracts for Center

papers published in the quarter. Entries are arranged by technical topic as identified in the table of contents and alphabetically by first author within each topic.

Following each abstract is the name and telephone number of the individual to contact

for more information on the topic (usually the first author). This issue also includes a calendar of Center conferences and workshops planned for calendar year 1987, some preliminary events for 1988, and a list of sponsors of the work.

Center for Electronics and Electrical Engineering : Center programs provide national

reference standards, measurement methods, supporting theory and data, and traceability to national standards.

The metrological products of these programs aid economic growth by promoting equity

and efficiency in the marketplace, by removing metrological barriers to improved

productivity and innovation, by increasing U.S. competitiveness in international

markets through facilitation of compliance with international agreements, and by

providing technical bases for the development of voluntary standards for domestic and

international trade. These metrological products also aid in the development of

rational regulatory policy and promote efficient functioning of technical programs of

the Government.

The work of the Center is divided into two major programs: the Semiconductor Technology Program, carried out by the Semiconductor Electronics Division in Gaithersburg, MD, and the Signals and Systems Metrology Program, carried out by the Electrosystems Division in Gaithersburg and the Electromagnetic Fields and Electromagnetic

Technology Divisions in Boulder, CO. See the table of contents on the opposite page

for identification of the topics covered by each program, as represented in this

issue. Key contacts in the Center are given on the back cover; readers are encouraged to contact any of these individuals for further information.

Center sponsors : The Center Programs are sponsored by the National Bureau of Standards and a number of other organizations, in both the Federal and private sectors;

these are identified on page 22.

Note on Publication Lists : Guides to earlier as well as recent work are the publication lists covering the work of each division. These lists are revised and reissued

on an approximately annual basis and are available from the originating division.

The current set is identified in the Additional Information section, page 20.
Research Information Center

National Bureau of Standards

Gaithersburg, Maryland 20899

CEEE Technical Publication Announcements - April 1988

TABLE OF CONTENTS

INTRODUCTION .

tic too Page 1

i liC^

YD, $$-57

min -i L- Is

» « « inside front cover

SEMICONDUCTOR TECHNOLOGY PROGRAM

Dimensional Metrology ........

Packaging . Integrated Circuit Test Structures .......

Device Physics and Modeling .........

Insulators and Interfaces ..........

Other Semiconductor Metrology Topics ...

FAST SIGNAL ACQUISITION, PROCESSING, & TRANSMISSION

Waveform Metrology

Cryoelectronic Metrology . Antenna Metrology

Microwave and Mil lime ter- Wave Metrology .....

Optical Fiber Metrology

Electro-Optic Metrology .......

Complex Testing

Other Fast Signal Topics

ELECTRICAL SYSTEMS ..........

Power Systems Metrology

Superconductors ......

Magnetic Materials and Measurements .......

ELECTROMAGNETIC INTERFERENCE

Radiated Electromagnetic Interference ...

Conducted Electromagnetic Interference ...

2

3

3

4

6

7

7

7

9

1 1

1 1

1 1

1 2

1 3

1 4

1 4

1 4

1 6

1 8

1 9

1 9

20

ADDITIONAL INFORMATION

1988 CEEE CALENDAR ........

SPONSOR LIST ..........

KEY CONTACTS IN CENTER, CENTER ORGANIZATION

. . . 20

• « . 2 1

. . c 22

. back cover
Page 2 CEEE Technical Publication Announcements - April 88

SEMICONDUCTOR TECHNOLOGY

Dimensional Metrology

Larrabee, R.D., Submi crometer Optical

Linewidth Metrology, Proceedings of

the SP IE (The International Society for

Optical Engineering, P.0. Box 20,

Bellingham, WA 98227) , Vol. 775, Integrated Circuit Metrology, Inspection,

and Process Control, pp. 46-50 (1987).

[Conference, Santa Clara, California,

March 1-6, 1 987 ]

.

The National Bureau of Standards ( NBS

)

has had a continuing program to develop

optical linewidth standards for the

integrated circuit industry for over 10

years. The past work has concentrated

on the development and the certification

of photomask linewidth and pitch standards. The recent work is directed at

extending the feature sizes on these

standards to cover the range from 0.5 to

30 ym, and at doubling the certification

accuracy to 0.025 pm. Features with

heights larger than approximately 1/4

the wavelength of the illuminating light

cannot be modeled as zero-thickness

layers as is done for photomasks. The

development of models to handle this

thick-layer case and to develop practical edge-detection criteria are currently under way at NBS. However, at the

present time, it is generally not possible to interpret the image profiles of

thick features and thereby measure an accurate linewidth. The basic obstacles

that must be overcome to achieve accu- rate submicron feature size measurements

for these features are reviewed, and the

prospects for future NBS optical standards for features such as photoresist

lines on silicon wafers are assessed.

Some suggestions about what to do until

these standards become available are given.

[Contact: Robert D. Larrabee, (301)

975-2298]

Nyyssonen, D. , Metrology in Microlithography, in VLSI Electronics Microstructure Science, Microlithography for

VLSI, N. G. Einspruch, ed. , Chapter 7,

Vol. 16, pp. 265-317 (Academic Press,

1 987) .

The advent of very-large-scale and veryhigh-speed integrated-circuit technologies has had enormous impact on the

requirements for accuracy and precision

of dimensional metrology. Accurate and

precise measurements are needed to improve yield, to ensure that lithographic

and critical dimension measurement systems meet specifications, to establish

control of fabrication processes, and to

relate measurements to theory or to serve as input data to modelinq or simulation programs. The push to micrometer

and submicrometer feature sizes on larger and larger wafers requires dimensional measurement systems with

precision and accuracy which can take up

only a small fraction of the error budget of 10% or less allowed in process

control. By the gauqe maker' s rule, the

measurement system tolerance must be

three to ten times less than the toler- ance on the part being manufactured.

This book chapter discusses some of the

unique requirements which metrology

places on optical and scanninq electron

microscope measurement systems and provides a framework for realistically

evaluating the capabilities of a given

dimensional-measuring system in the

context of the purpose for which the

measurement system is to be used.

[Contact: Robert D. Larrabee, (301)

975-2298]

Nyyssonen, D., and Larrabee, R.D.,

Submicrometer Linewidth Metrology in

the Optical Microscope, NBS Journal

of Research, Vol. 92, No. 3, pp. 187-

204 (May-June 1987).

The recent impetus of the semiconductor

industry toward submicron feature sizes

on integrated circuits has generated an immediate need for measurement tools and

standards suitable for these features.

Optical techniques have the advantages

of being nondestructive and of having

high throughput, but the disadvantage of

using wavelengths comparable to feature

size, which results in complex scattered
CEEE Technical Publication Announcements - April 88 Page 3

Dimensional Metrology (cont'd.)

fields and image structures that are difficult to interpret* Although submicron optical linewidth measurement is

possible for 0.3-ym feature sizes, cur- rent instrumentation and linewidth standards, particularly for wafers, will

have to improve radically in accuracy, as well as in precision, to meet the

anticipated needs of the IC industry for

submicron dimensional metrology. This

paper discusses the effects of inadequate precision and accuracy on process

control in IC fabrication and suggests

some ways of circumventing these limitations until better instrumentation and

standards become available.

[Contact: Robert D. Larrabee, (301)

975-2298]

Postek, M.T. , Submicrometer Dimensional Metrology in the Scanning Electron

Microscope, Proceedings of the SPIE

(The International Society for Optical

Engineering, P.0. Box 20, Bellingham,

WA 98227), Vol. 775, Integrated Circuit Metrology, Inspection, and Process

Control, pp. 166-1 71 (1987). [Conference, Santa Clara, California, March

1 -6, 1987].

The National Bureau of Standards has

initiated a program to develop scanning

electron microscope linewidth measure- ment standards for the integratedcircuit community. This program involves the development of: a scanning

electron microscope-based linewidth

measurement and standard reference material certification instrument, the

necessary electron beam/sample interaction modeling, and the appropriate

micrometer and submicrometer artifacts.

The basic problems that must be overcome

to achieve accurate submicrometer feature size measurements in the scanning

electron microscope for these artifacts

are reviewed and some suggestions are given of what can be done to "bridgethe-gap" until such standards become

available.

[Contact: Michael T. Postek, (301)

975-2299]

Packaging

Kane, D. , Moore, B.A., and Walters,

E.J. , RADC/NBS International Workshop

on Moisture Measurement and Control for

Microelectronics (IV), NBSIR 87-3588

(June 1987).

This fourth Workshop on Moisture Measurement and Control for Microelectronics served as a forum on moisture and/or

materials reliabilitv problems and on ways to control them or measure their

extent. Twenty-two presentations are included which contain detailed information on hermeticity measurement and

definition; development of standard

packages for mass spectrome trie calibrations; moisture interaction with various

materials; and techniques that can be

used to measure moisture in microelectronic packages. It was clear from

several presentations in this workshop

that a very systematic approach is

needed when organic materials are

involved; all the variables must be

identified and studied one at a time.

This is the key to lot-to-lot reproducibility, materials selection, and control; hence a better reliability at the

design phase will decrease the need for

testinq, hence the cost, thus resulting

in a greater satisfaction to the customer.

[Contact: E. Jane Walters, (301)

975-2050]

Integrated Circuit Test Structures

Cresswell, M.W., Pessell, N . , Betsch,

R.J., Linholm, L.W., and Radack, D.J. , Sub-Micron Lithography Characterization

Using an Expert System, Proceedings

of the SPIE (The International Society

for Optical Engineering, P.O. Box 20,

Bellingham, WA 98227), Vol. 775, Integrated Circuit Metrology, Inspection,

and Process Control, pp. 304-311

(1 987). [Conference, Santa Clara,

California, March 1-6, 1987].

This paper describes a test chip, test

results, rule-generation techniques, and

an expert system for characterizing the
Page 4 CEEE Technical Publication Announcements - April 88

IC Test Structures (cont'd.)

performance of a sub-micron lithography

process* Examples of test results, data

reduction techniques, and expert system

output are given* The objective of this

work is to develop a system for automatic process diagnosis.

[Contact: Loren W. Linholm, (301)

975-2052]

Radack, D.J. , and Linholm, L.W., OnChip Propagation Delay Measurement,

Proceedings of the IEEE 1987 Custom

Integrated Circuits Conference, Portland, Oregon, May 4-7, 1987, pp. 579-

581 .

The accurate measurement of gate propagation delay is needed for increasing

the accuracy of simulators and for com- paring device designs and evaluating

fabrication technologies. A digital

circuit is presented which can be used

to determine propagation delay of any

unclocked circuit element. The circuit

contains on-chip logic which allows

propagation delay measurement using a low-frequency parametric test system.

[Contact: Loren W. Linholm, (301)

975-2052]

Radack, D.J., Swartz, T.C., Linholm,

L.W., and Cresswell, M.W., A Comprehensive Test Chip for the Characterization of Multi-Level Interconnect Processes, Proceedings of the 1987 IEEE

VLSI Multilevel Interconnect Conference, Santa Clara, California, June

1 4-1 7, 1987, pp. 238-244 (1 987).

A test chip for the evaluation and characterization of multi-level interconnect

processes has been developed. The test

chip contains test structures which

allow a process engineer to make com- parative, quantitative measurements for

evaluating the performance of selected

processes and equipment. This paper

describes the design and testing of

selected test structures and presents

initial test results.

[Contact: Loren W. Linholm, (301)

975-2052]

Schafft, H. A., Thermal Analysis of

Electromigration Test Structures,

IEEE Transactions on Electron Devices,

Vol. ED-34, No. 3, pp. 664-672 (March

1 987) *

A thermal analysis of a straight-line

resistor test structure is used to show

how test structure desiqn and test con- ditions can affect the accuracy of electromigration characterizations of metallizations. Recommendations for the

design and use of electromiaration test

structures are given.

[Contact: Harry A. Schafft, (301)

975-2234]

Schafft, H.A., Staton, T. , Mandel, J.

,

and Shott, J. , Reproducibility of

Electromigration Measurements, IEEE

Transactions on Electron Devices, Vol.

ED-34, Mo. 3, pp. 673-681 (March

1987) .

The reproducibility of median-t ime-tofailure (t^g) measurements was determined in an interlaboratorv experiment

in which 1 1 laboratories and a reference

laboratory took part. Each laboratory

used a method of its choosinq to test

equivalent samples under the same conditions of current density and oven temperature. The between-labo ratory reproducibility of tg

g measurements normalized to one metallization temperature was dependent on current-density stress:

at 1.0 MA/cm 2 it was within 15%, while

at 2.5 MA/cm 2 it was generally within

50%. The primary source for variability

is in estimating the temperature rise of

the test metallization due to joule

heating. Recommendations are given for

the design and test of electromigration

test structures to improve the reproducibility of t

5

Q

measurements.

[Contact: Harry A. Schafft, (301)

975-2234]

Device Physics and Modeling

Albers, J. , Semiconductor Measurement

Technology: Results of the Monte Carlo

Calculation of One- and Two-Dimensional

Distributions of Particles and Damage:
CEEE Technical Publication Announcements - April 88 Page 5

Device Physics and Modeling (cont'd.)

Ion Implanted Dopants in Silicon, NBS

Special Publication 400-79 (September

1 987) .

The TRansport of Ions in Matter (TRIM)

Monte Carlo code was used to calculate

the two-dimensional distributions of

particles, primary damage, and electronic and nuclear energy loss for implantation of a line beam source into silicon

targets. Approximate two-dimensional

distributions of the Frenkel pairs

(vacancy-interstitial) created by the

primary displacement damage of the target atoms were calculated by means of

the Kinchin-Pease equation. These particle, damage, and energy loss distributions allowed for the calculation of the

one-dimensional distributions of these

quantities for implantation into un- masked targets. A superposition technique was used to construct the twodimensional particle and approximate

Frenkel pairs distributions for implantation past a mask edge. The energetic

ions used in the calculations were in

two groups: those used as intentional

dopants in silicon device fabrication

and those which either limited lifetime

or acted as gettering sites. The particle distributions were parameterized by

means of standard polynomial fitting

techniques.

[Contact: John Albers, (301) 975-2075]

Bennett, H.S., Fundamental Principles

for Gallium Arsenide Devices, Proceedings of the International Symposium

on Circuits and Systems, Philadelphia,

Pennsylvania, May 4-7, 1987, pp. 12-14

(1 987) .

Recent advances in physics for submicrometer silicon devices suggest lessons or principles that are valid when numerically simulating the behavior of GaAs - devices. These lessons from physics for

silicon devices are summarized and their

implications for GaAs devices are

given.

[Contact: Herbert S. Bennett, (301)

975-2079]

Bennett, H.S . , Subiicron Device

Physics for Numerical Simulations,

Proceedings of the SPIE (International

Society of Optical Engineering, P.O.

Box 10, Bellingham, WA 98227-0010),

Vol. 763, Physics of Amorphous Semiconductor Devices, pp. 134-140 (1 987).

[Conference, Los Angeles, California,

January 1 5-1 7, 1 987]

Recent advances in physics for submicron, bipolar-crystalline devices suggest principles that are valid when

modeling bipolar devices with noncrystalline regions such as those with polysilicon, polycrvstalline silicon, and

hydrogenated amorphous silicon emitters.

These principles from crystalline device

physics are summarized, and their implications for the noncrystalline regions

of bipolar devices are given.

[Contact: Herbert S. Bennett, (301)

975-2079]

Bennett, H.S., and Lowney, J.R., Models for Heavy Doping Effects in Gallium

Arsenide, Journal of Applied Physics,

Vol. 62, No. 2, pp. 521-527 (Julv 15,

1987) .

Knowledge of the parameters that

describe how the band edges, densities

of states, and the effective intrinsic

carrier concentrations vary with dopant

and carrier densities are essential for

reliable predictions from numerical

simulations of GaAs/AlGaAs devices and

for interpreting optical measurements.

Klauder* s self -energy method, which is

self-consistent, is used to calculate

the effects due to the interactions

between carriers and dopant ions in GaAs

at 300 K. The many-body effects due to

the interactions among the carriers

themselves, exchange, and correlation

are estimated by evaluating expressions

similar to those of Abram et al. at 300

K. When densities exceed about 5 x 10^

cm~ ^ in n-type GaAs and 10*8 cm~ 8 i n p-type GaAs, carrier-dopant ion interactions and carrier-carrier interactions

become significant and should be included in calculations of band structure

changes and of properties which depend
Page 6 CEEE Technical Publication Announcements - April 88

Device Physics and Modeling (cont1 d.)

changes and of properties which depend

on the density of states such as carrier

transport,, effective intrinsic carrier

concentrations, and coefficients for

optical absorption.

[Contact: Herbert S. Bennett, (301)

975-2079]

Gaitan, M., and Mayergoyz, I.D., Time

Perturbation Analysis for the MOS System, in Fundamental Research on the

Numerical Modelling of Semiconductor

Devices and Processes, J.J.H. Miller,

Ed., pp. 77-83 (Boole, Ireland, 1987)

[Proceedings of the First International

Workshop on the Numerical Modelling of

Semiconductors, Los Angeles, California, December 1 1-1 2, 1986], [Paper

also appeared in COMPEL, Vol. 6, No.

22, pp. 77-83 ( 1 987) .]

The development of a numerical implementation of the small-signal response of

MOS (metal oxide-semiconductor) capacitors, using time perturbation analysis

is discussed. The effects of noncon- stant doping profiles and interface and

bulk traps are included. The model uses Fermi-Dirac statistics to describe the

occupancy of the interface and bulk

traps. The oxide region is considered

to have no mobile carriers, and any

fixed oxide charge distribution is

modeled as a charge sheet at the Si-SiO ? interface. This technique can be used

to find the small signal response of a device from the static solution.

[Contact: Michael Gaitan, (301)

975-2070]

Hefner, A.R., and Blackburn, D.L. , A

Performance Trade-Off for the Insulated

Gate Bipolar Transistors Buffer Layer

Versus Base Lifetime Reduction, IEEE

Transactions on Power Electronics, Vol.

PE-2, No. 3, 194-207 (1 987). [Identical paper appeared in PESC '86, Proceedings of the 17th Annual IEEE Power

Electronics Specialists Conference, pp.

27-38 ( 1 986) .]

A one-dimensional analytic model for the

insulated gate bipolar transistor

(IGBT), which includes a high-doped

buffer layer in the low-doped bipolar

transistor base, is developed. The

model is used to perform a theoretical

trade-off study between IGBTs with and

without the buffer layer. The study is

performed for devices of equal breakdown

voltages, and the critical parameters

chosen to "trade-off" are turn-off

switching energy loss (related to turnoff time) and on-state voltage, both at

a given current. In this model, as in

reality, the two critical parameters are varied by 1) adjusting the doping con- centration and thickness of a buffer

layer included as part of the bipolar

transistor base, 2) adjusting the lifetime in the lowly doped bipolar transistor base with no buffer layer included, or by 3) a combination of 1 ) and 2) . The results of the model predict that

for equal breakdown voltages an optimized device with a buffer layer has

less switching energy loss for a given

on-state voltage than an optimized

device with no buffer layer.

[Contact: Allen R. Hefner, (301)

975-2071]

Lowney, J.R., and Bennett, H.S., Limitations of Isotropic Theory of Band-Gap

Narrowing in Si and GaAs Devices,

Proceedings of the 1987 IEEE Bipolar

Circuits and Technology Meeting, Minneapolis, Minnesota, September 21-22,

1987, pp. 1 57-1 59 ( 1 987)

.

The theory of band-gap narrowing based

on uniform material is shown to be invalid for devices with very large dopinq

gradients. Calculations also show that

enhanced narrowing results from the

built-in field.

[Contact: Jeremiah R. Lowney, (301)

975-2048]

Insulators and Interfaces

Carver, G.P., Novotnv, D.B., and Kopanski, J.J., An Innovative Measurement

of Specific Contact Resistivity Confirms Lower Aluminum-Silicon Contact

Resistance, Proceedings of the 1987
CEEE Technical Publication Announcements - April 88 Page 7

Insulators and Interfaces (cont'd.

)

IEEE VLSI Multilevel Interconnect Conference, Santa Clara, California, June

1 4-1 7, 1 987, pp. 337-343 (1 987).

New accurate data prove that the value

of the aluminum-silicon specific contact

resistivity is much smaller than the

value determined previously by two-level

planar contact resistor structures. The new data were obtained using an innovative method based upon small, geometrically well-defined contacts, for which

the silicon spreading resistance can be

calculated self -consistently . In this

method, the total series resistance is

measured at a contact window in an oxide

layer to a silicon wafer. Unlike twolevel planar structures, lateral and

vertical current crowding effects in the

metal layer are measured separately and

are not involved directly in modeling

the contact resistance. Using this new

method, values of the specific contact

resistivity between an aluminum alloy

containing 1 .5% silicon and silicon

wafers were measured for p-type silicon

resistivities in the range from 0.006 to

25 ohm-cm and for n-type silicon resistivities in the range from 0.0014 to

0.0026 ohm-cm. The specific contact

resistivity values we obtained are about

five times smaller than values reported

from two-level planar structures, suggesting that aluminum may be useful for

contact dimensions as small as 0.5 ym on

a side. With the new results, multilevel conductor systems can be designed

for optimal performance.

[Contact: Gary P. Carver, (301)

975-2091

]

Other Semiconductor Metrology Topics

Bouldin, C.E., Forman, R.A., Bell, M.I.,

Donovan, E.P., and Hubler, G.K.,

EXAFS Measurements of Ion and Implanted

Amorphous Surface Layers, Proceedings

of the SPIE (International Society of

Optical Engineering, P.0. Box 10,

Bellingham, WA 98227-0010), Vol. 690,

Optoelectronic Applied Sciences and

Engineering, pp. 45-51 (1 986). [Conference, San Diego, California, August

1 7, 1986]

EXAFS measurements of ion-damaged amor- phous Ge (a-Ge) show that low-temperature annealing causes a structural

relaxation in the as-implanted a-Ge. It

is found that there is a sharpening of

the first shell in the radial distribution but no change occurs in the firstshell distance or coordination number.

No higher shells in the radial distribution are observed either before or after

annealing, indicating that these shells

remain highly disordered. The observed

structural relaxation is an amorphousamorphous transition; no nucleation of

microcrystals takes place. FXAFS mea- surements are made using conversion

electron detection (CEEXAFS) , which is

essentially total electron yield detection in ambient conditions, allowing the

EXAFS measurements to be near-surface

sensitive with a sampling depth of 600

to 800 A.

[Contact: Charles E. Bouldin, (301)

975-2946]

Zaghloul, M.E., An Overview of Testability Measures in the Design of Digital Integrated Circuits, Semicustom

Design Guide, pp. 98-108 (1987).

This paper is an overview of testabilitv

measures in the design of digital integrated circuits. Commercial testability

algorithms are described and compared.

Recent developments on testability mea- sures which enhance the role of testability are discussed.

[Contact: Loren W. Linholm, (301) 975-

2052]

FAST SIGNAL ACQUISITION, PROCESSING,

AND TRANSMISSION

Waveform Metrology

Bell, B.A., A Report on the NBS/CEEE

Survey of Electronic Measurement Needs

Below 10 MHz, Proceedings of the

National Conference of Standards Laboratories, 1987 Workshop and Symposium,

Denver, Colorado, July 1 2-1 6, 1987, pp.
Page 8 CEEE Technical Publication Announcements - April 88

Waveform Metrology (cont'd.)

75-1 - 75-14.

This paper describes the results of a recent survey conducted by the Electrosystems Division of the Center for Electronics and Electrical Engineering

(CEEE) at the National Bureau of Standards (NBS ) . A summary analysis is

provided of the data obtained on questions concerning (1) critical electrical

quantities and associated instrumentation and devices, (2) automatic test

equipment ( ATE) /complex measurement

systems, and (3) conducted electromagnetic interference.

[Contact: Barry A. Bell, (301)

975-2402]

Lawton, R.A., and Meyer, K. , Waveform

Standards for Electrooptics: A Pulse

Duration Comparison, IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-35, No. 4, pp. 450-453

( April 1 987) . A transfer standard has been developed

for use in comparing the measurement

capability of the Automatic Pulse Measurement System (APMS) at the National

Bureau of Standards to that of recently

developed electrooptic samplers. This

transfer standard is a comb generator

driven by a 90-MHz sine wave. Using

this standard, measurements were made of

the pulse waveform of a comb generator

output with both the APMS and an electro-optic sampler. A comparison was then made of the pulse duration (full

width at half maximum) obtained in the

two waveform measurements. The result was a duration of 1 02 ps as measured by

the APMS and 112 ps as measured by the

electro-optic sampler. The signal-tonoise ratio at the comb generator input was improved over that of previous measurements, and a correction for pulse

broadening was made to achieve this

result. The pulse broadening was caused

by the impedance mismatch between the

sampler and the transmission system (50

SI) . [Contact: Robert A. Lawton, (303)

497-3339]

Oldham, N.M., AC Voltage and Current

Measurements, MAPAN, Journal of

Metrology Society of India, Vol. 1 , No.

3, pp. 1 7-18 (1 986) . Definitions and various measurement

techniques for the measurement of ac voltaqe and current are given.

[Contact: N. Michael Oldham, (301)

975-2408]

Oldham, N.M., Lauq, O.R., and Waltrip,

B.C., Digitally-Synthesized Power

Calibration Source, IEEE Transactions

on Instrumentation and Measurement,

Vol. IM-36, No. 2, pp. 341-346 (June

1987) [ CP EM 86 Proceedings issue].

A digitally synthesized source of "phantom" power for calibrating electrical

power and energy meters is described.

Independent sources of voltage, current,

and phase angle are programmable between

0 and 240 V, 0 and 5 A, and 0 and 360

deg, respectively. The accuracy of the

active and reactive power is estimated

to be within ±100 ppm of the full scale

apparent power (volt-amperes).

[Contact: N. Michael Oldham, (301)

975-2408]

Oldham, N.M., and Parker, M.E., NBS

Calibration System for AC Voltage,

Proceedings of the 1987 National Conference of Standards Laboratories, 1987

Workshop and Symposium, Denver, Colorado, July 1 2-16, 1987, pp. 47-1

47-6.

An automatic system for calibrating high

accuracy ac voltmeters and calibrators

is described. The system relies on measurements using coaxial thermal voltage converters to achieve ac-voltage

uncertainties of 5 to 1 50 ppm from 0.01-

600 volts over the frequency range of 10

Hz to 1 MHz . Specialized hardware and

measurement techniques make it possible

to achieve these uncertainties in test

periods of approximately one minute.

Random errors introduced by the system

are typically less than 2 ppm (one standard deviation) . [Contact: N. Michael Oldham, (301)

975-2408]
CEEE Technical Publication Announcements - April 88 Page 9

Waveform Metrology (cont1 d.)

Oldham, N.M., Parker, M.E., Young, A.,

and Smith, A.G., A High Accuracy, 10

Hz - 1 MHz Automatic AC Voltage Calibration System, Proceedings of the

IEEE Instrumentation and Measurement

Technology Conference, Boston, Massachusetts, April 27-29, 1987, pp. 279-

281 (April 1987) .

An automatic system for calibrating

high-accuracy ac voltmeters and calibrators is described. The system is based

on traditional coaxial thermal voltage

converters to provide measurement uncer- tainties of 5 to 20 ppm in the audio

frequency range and 5 to 150 ppn over

the full range from 1 0 Hz to 1 MHz.

Specialized hardware and measurement

techniques make it possible to achieve

these uncertainties in test periods of

approximately one minute. Random errors

introduced by the system are typically

less than 2 ppm (one standard deviation) . [Contact: N. Michael Oldham, (301)

975-2408]

Schoenwetter, H.K., Design and Characterization of a Programmable Step Generator with Very Fast Settling Performance, IEEE Transactions on Instrumentation and Measurement, Vol. IM-36,

No. 2, pp. 428-432 (June 1987) [CPEM 86

Proceedings issue]

.

A pulse generator for testing the step

response of waveform recorders is described. The initial and final levels

of voltage steps are each programmable

within the range of ±1 V for a 50-ft

termination. voltage steps within this

range settle to within ±0.2 and ±0.1

percent of full-scale range in approximately 4 and 6 ns, respectively. The

1 0-90 percent transition duration is

approximately 1.7 ns. [Contact: Howard K. Schoenwetter, (301)

975-2414]

Souders, T.M., and Flach, D.R., Accurate Frequency Response Determinations

from Discrete Step-Response Data,

IEEE Transactions on Instrumentation

and Measurement, Vol. IM-36, Mo. 2, pp.

433-439 (June 1987) [CPEM 86 Proceedings issue] .

An approach is presented for Quickly

obtaining the complex frequency response

of a system from sampled step-response

data. Digital signal processing techniques are used extensively. An analysis of errors resulting from sampling,

quantization, first differencing, and

record length is included.

[Contact: T. Michael Souders, (301)

975-2406]

Cryoelectronic Metrology

Hamilton, C.A., Kautz, R.L., Lloyd,

F.L., Steiner, R.L., and Field, R.F.,

The NBS Josephson Array Voltage Standard, IEEE Transactions on Instrumentation and Measurement, Vol. IM-36, Mo.

2, pp. 258-261 (June 1987).

A Josephson voltage standard based on a series array of 2076 junctions is described. When irradiated with a 1 5-mW

signal at a frequency of 96 GHz, the

array produces 15,000 quantized levels

between -1.5 and 1.5 V. Initial results

on high-precision comparisons with a Zener reference standard are given.

[Contact: Clark A. Hamilton, (303)

497-3740 or -3988]

Kautz, R.L., Global Stability of Phase

Lock Near Chaotic Crisis in the RFBiased Josephson Junction, Journal of

Applied Physics, Vol. 62, Mo. 1, pp.

198-21 1 (July 1 ,

1 987)

.

The global stability of phase lock in

the radi of requency-b iased Josephson

junction is studied through digital

simulations. Global stability is determined by calculating the lifetime of the

phase-locked state in the presence of

thermal noise. This lifetime, the mean

time required for thermal noise to induce a 2 7T phase slip, increases exponentially with inverse temperature in the

limit of low temperatures, and the lowtemperature asymptote can be parameter-
Page 1

0

CEEE Technical Publication Announcements - April 88

Cryoelectronic Metrology (cont'd.)

ized in terms of an activation energy e and an attempt time x 0 . The activation energy is a useful measure of

global stability for both periodic and

chaotic phase-locked states. The

behavior of e and x Q is studied over a range of critical current densities

which take the system from a region of

harmonic motion through a period-doubling cascade and into a region of phaselocked chaotic behavior which is ended

by a chaotic crisis. At the crisis

point, the activation energy goes to

zero and the attempt time goes to infinity. The results are used to determine

the optimum critical current density for

series-array voltage standards.

[Contact: Richard L. Kautz, (303)

497-3391 or -3988]

Kautz, R.L., Hamilton, C.A., and Lloyd,

F .L . , Series-Array Josephson Voltage

Standards, IEEE Transactions on Magnetics, Vol. MAG-23, No. 2, pp. 883-890

( March 1 987) .

Series arrays typically including 1500

Josephson junctions driven at 90 GHz

have been used to generate quantized

reference voltages in excess of 1 V.

Such standards simplify the procedure

and reduce the measurement uncertainties

in the calibration of electrochemical

cells

.

[Contact: Richard L. Kautz, (303)

497-3391 or -3988]

Ono, R.H., Cromar, M.W., Kautz, R.L.,

Soulen, R.J., Colwell, J.H., and Fogle,

W.E., Current-Voltage Characteristics

of Nanoampere Josephson Junctions,

IEEE Transactions on Magnetics, Vol.

MAG-23, No. 2, pp. 1670-1673 (March

1987) [Proceedings of the 1986 Applied

Superconductivity Conference, Baltimore, Maryland, Sept. 28-Oct. 3, 1986].

We have studied the current-voltage

( I—V ) characteristics of small-area

tunnel junctions at temperatures below

1 K. The junctions were made in an edge

geometry with an Nb base electrode and

had areas less than 0.05 pm 2 and critical currents in the nanoampere ranqe.

Although the measured 1-v characteristics resemble those of ordinary hysteretic jxmctions, the supposed zero-voltaqe

portion of the curve proved to have a finite slope and to deviate from zero

voltage. For these junctions, it is

apparently possible for occasional 2g

phase slips to occur without switching

to the usual voltage state. This behavior can be explained either by macro- scopic quantum tunneling or by a model

in which the effective shunt conductance

of the junction is f reguency-d ependent.

[Contact: Michael W. Cromar, (303) 497-

5375]

Peterson, R.L., Sinusoidal Response of

dc SQUIDs for rf Power Measurements,

NBS Journal of Research, Vol. 92, No.

4, pp. 253-259 (July-August 1987).

Current, power, and attenuation measure- ments with radiof reguency Superconducting Quantum Interface Devices (SQlJIDs) are based on the fact that the voltage

from the microwave readout circuit can be made a nearly sinusoidal function of

the magnetic flux threading the SQUID.

We point out here that an asymmetric dc

SQUID with sufficiently low inductance

can achieve a very sinusoidal output

voltage with good modulation depth. The

spectral purity of the sinusoid can be

substantially better than that obtained

with rf SQUID systems. The purity

improves with increasing asymmetry of

the junction critical currents, and

decreasing values of the LIC product,

where L is the SQUID inductance and I c is the smaller of the critical currents.

Results of several calculations are presented. Substantial improvement in

SQUID methods of rf current, power, or attenuation measurement may thus be

possible with use of such dc SQUIDS.

[Contact: Robert L. Peterson, (303)

497-3750 or -3227]

Zimmerman, J.E., Beall, J.A., Cromar,

M.W., and Ono, R.H., Operation of a Y-Ba-Cu-0 rf-SQUID at 81 K, Applied

Physics Letters, Vol. 51, No. 8, pp.
CEEE Technical Publication Announcements - April 88 Page 1

1

Cryoelectronic Metrology (cont'd.)

617-618 (August 24, 1987).

An rf superconducting quantum interference device (SQUID) has been made from

bulk Y-Ba-Cu-O. The device displays

quantum interference effects and operates with useful signal levels up to 81

K. The SQUID is formed from a ring of

Y-Ba-Cu-0 which is broken in the cryogenic environment and then recontacted.

Estimates of the SQUID noise performance

are given.

[Contact: James A. Beall, (303)

497-5989]

Antenna Metrology

Newell, A.C., The Effect of Random

Errors in Planar Near-Field Measurements, Proceedings of the 1986 IEEE

Antenna and Propagation Society Symposium, Philadelphia, Pennsylvania, June

8-1 3, 1 986, pp. 196-198 (1 987).

Equations have previously been derived

to predict the effect of systematic

errors in planar near-field measurements. Similar expressions for random

errors have not been generally available, although computer simulation has

been used to study some specific cases.

In this report, simple general expressions are derived to predict the effect

of random errors that require only minimal information about the antenna and

the error distributions.

[Contact: Allen C. Newell, (303)

497-3743]

Microwave & Millimeter-Wave Metrology

Daywitt, W.C., Complex Admittance of a Lossy Coaxial Open Circuit with a Hollow Center Conductor, Metrologia,

Vol. 24, pp. 1 3-22 (1987).

The reflection coefficient and complex

discontinuity admittance of a coaxial

open circuit with a hollow center con- ductor are derived from fields correct

to first order in the skin depth. Results show an admittance terminating the

line at the plane of the discontinuity

and consisting of a resistance in parallel with a capacitive reactance. The

first-order fields are also used to

derive equations for the characteristic

admittance, series impedanc and shunt

admittance of the line. These equations

include terms neglected in the wellknown expressions used to calculate the

line parameters, enabling error limits

to be assigned to the latter.

[Contact: William C. Daywitt, (303)

497-3720]

Larsen, N.T., Microwave Power Standards. Proceedings of the National

Conference of Standards Laboratories,

1987 Workshop and Symposium, Denver,

Colorado, July 12-16, 1987, pp. 34-1 - 34-7.

A general review of the history and

present status of the microwave power

standards in use at the National Bureau

of Standards (NBS) is presented. The

standards are calorimeters, and the

quantity measured is "effective

efficiency." The calibration services

are based on these standards. The

design and evaluation of these standards

are discussed.

[Contact: Neil T. Larsen, (303)

497-371 1

]

Optical Fiber Metrology

Danielson, B.L., and Whittenberg, C.D.,

Guided-Wave Reflectometry with Micrometer Resolution [Original title: A New Method for High Resolution Reflectometry] , Applied Optics, Vol. 26, No.

14, pp. 2836-2842 (July 15, 1987).

We describe a new type of optical

reflectome try which is useful in testing

single-mode lightguide systems. This

technique uses a scanning Michelson

interferometer in conjunction with a broadband illuminating source and cross- correlation detection. Hiqh resolution

is achieved through the limited coher- ence of the backscattered radiation.

With this approach it is possible to

distinguish scattering centers separated
Page 1

2

CEEE Technical Publication Announcements - April 88

Optical Fiber Metrology (cont'd,

)

by only a few micrometers. In some cases loss may be estimated for components in the transmission path of a test

lightguide. The basic principles of

this diagnostic technique, along with

some performance characteristics, are illustrated for an all-fiber reflectometer. We also discuss several laboratory

applications which serve to demonstrate

the resolution capabilities of this

measurement concept.

[Contact: Bruce L. Danielson, (303)

497-5620]

Electro-Optic Metrology

Day, G.W., Hale, P.D. , Deeter, M., Milner, T.E., Conrad, Do, and Etzel, S.M.,

Limits to the Precision of ElectroOptic and Magneto-Optic Sensors,

Optical Power Line Voltage and Current

Measurement Systems, Electric Power

Research Institute Report EPRI EL-5431,

Volo 1 (September 1987). [Also appeared with the same title, introduction, and short abstract as NBS Technical Note 1 307 (March 1987).]

This study began with a central question, "What precision can be achieved

with an electro-optic voltage sensor or

a magneto-optic current sensor?" The

answer has been pursued in numerous

ways, through an investigation of the

basic properties of materials and components, both as reported in the literature and new data generated in our laboratory; through attempts to demonstrate

the feasibility of overcoming certain

limitations in the properties of components; through analysis of some fundamental limitations, through the proposal

of new or refined designs, and through

discussions with numerous other investigators.

It was concluded that ease of obtaining

high precision (in a power systems context) is not included among the advantages of using optical sensors for mea- surement of electromagnetic quantities.

The principal difficulty was that sensors have to maintain their calibration

over broad temperature ranges (at least

100°C) without the possibility of temperature stabilization. Specifically,

using relatively standard approaches and an appropriate definition of precision,

a precision not better than about ±1 percent can be expected. Achieving that

level will require wise choices of materials, components, and desiqn, and num- erous suggestions are offered.

Judgments about the commercial viability

of such devices are left to those more expert in that subject. However, worstcase situations are encountered infrequently, and therefore represent pessimistic assessments of performance in

real applications. Also, the other

advantages of optical sensors may in some applications be dominant considerations. Safety is one example.

Using passive temperature compensation

technigues may improve the precision of

optical sensors bv a desired order of

magnitude. Several have been examined

analytically, and the authors suggest

that they be investigated further.

Other approaches, including temperature

compensation by measurement and adjustment, could be considered, but are not

discussed here. The development of

all-fiber or nearly all-fiber sensors could provide very simple, low-cost

measurements, even if the highest precision is not achieved, and further work

in this area is suggested.

[Contact: Gordon W. Day, (303)

497-5204]

Geist, J. , Photodiode Quantum Efficiency and Spectral Responsivity SelfCalibration, Proceedings of the IEEE

Instrumentation and Measurement Technology Conference, Boston, Massachusetts, April 27-29, 1987, pp. 75-79.

High-quality silicon photodiodes can be

used as primary radiometric standards in

the visible portion of the radiometric

spectrum. The physical basis for their use as standards, and their performance

in areas pertinent to their use as stan-
CEEE Technical Publication Announcements - April 88 Page 1

3

Electro-Optic Metrology (cont'd.

)

dards, is reviewed.

[Contact: Jon Geist, (301) 975-2066]

Geist, J. , Recent. Improvements in

Radiometric Accuracy Based on New Detector Technology, Remote Sensing of

Environment, Vol. 22, pp. 127-129

(1 987) .

Until recently, the best accuracy

achievable in the measurement of radiometric properties was limited by the

accuracy of the ultimate radiometric

standard to which the measurement could

be traced. Since about 1980, however,

there have been such dramatic improvements in the accuracy of detector-based

standards that this is no longer the case. These new radiometric standards

are briefly reviewed in this paper, with

emphasis on the intercomparisons that

demonstrate their accuracy.

(Contact: Jon Geist, (301) 975-2066]

Korde, R., and Geist, J. , Stable, High

Quantum Efficiency, UV-Enhanced Silicon

Photodiodes by Arsenic Diffusion,

Solid-State Electronics, Vol. 30, No.

1 , pp. 89-92 (1987) .

Very high quantum efficiency, UV-enhanced silicon photodiodes have been

developed by arsenic diffusion into

p-type silicon as an alternative to the

inversion layer photodiodes commonly

used in precise radiometric and spectroscopic measurements. The fabricated

diodes had an unbiased internal quantum

efficiency that was 100% from 350 to 550

nm, and that exceeded 100% at shorter

wavelengths. A typical responsivity at

2 00 nm was 0.1 A/W . No degradation in

responsivity was detected anywhere in

the 200- to 1 1 00-nm range when these

devices were exposed to 20 mW/cm^ of

254-nm radiation for 60 days. Thus the'

theoretical maximum value of internal

quantum efficiency for a diffused photodiode appears to have been achieved in

the UV and short wavelength visible,

without compromising the diode's longterm stability. This is marked contrast

to older types of diffused photodiodes,

exhibited a spectral response vs. flux

characteristic that changed considerablv

with UV exposure.

[Contact: Jon Geist, (301) 975-2066]

Peterson, R.L., Numerical Study of

Currents and Fields in a Photoconductive Detector [previously titled

"Numerical Study of Currents and Fields

in a Semiconducting Optical Detector"]

,

IEEE Journal of Ouantum Electronics,

Vol. QE- 23, No. 7, pp. 1185-1192 (July

1987) .

A numerical study of the current, field,

and carrier density distributions within

a photoconductive detector is presented.

The photodetector, an interdigi tated

Schottky barrier diode, is made with

metallic fingers of alternating voltage

bias on a thin semiconductor layer grown

on a transparent dielectric substrate.

The Poisson and continuity equations for

electrons and holes are treated in two

dimensions. A modified successive line

overrelaxation method, faster than the

capacitance matrix method, is developed

as the Poisson solver. A simple alternative to the Scharfetter-Gumme 1 treatment of current density is also introduced. We investigated steady-state

cases with and without optical illumination, and transient responses to picosecond optical pulses. The steady-state

current shows near saturation with

increasing voltage, as observed experimentally. The calculated typical

response of the silicon detector to a picosecond optical pulse is a current

pulse lasting on the order of 10 ps.

[Contact: Robert L. Peterson, (303)

497-3750 or -3227]

Complex Testing

Stenbakken, G.N., and Souders, T.M.,

Test Point Selection and Testability

Measures via QR Factorization of Linear

Models, IEEE Transactions on Instrumentation and Measurement, Vol. IM-36,

No. 2, pp. 406-410 (June 1987). [Paper
Page 1

4

CEEE Technical Publication Announcements - April 88

Complex Testing (cont'd.)

given at the 29th Midwest Symposium on Circuits and Systems, Lincoln, Nebraska, August 10-12, 1986]o

An efficient algorithm is presented for

selecting test points for use in applications such as calibration and fault

diagnosis of electronic networks. The

algorithm, based on QR factorization of

the circuit sensitivity matrix, minimizes the prediction or estimation er- rors which result from random measure- ment error. A definition of testability

based on the concept of minimum estimation error is also introduced. Practical examples are given.

[Contact: Gerard N. Stenbakken, (301)

975-2440]

Other Fast Signal Topics

Oates, C.W., and Young, M., Microscope

Objectives, Cover Slips, and Spherical

Aberration, Applied Optics, Vol. 26,

No. 11, p. 2043 (June 1, 1987).

Microscope objectives with powers of 20X

and higher will display significant

spherical aberration when used to

examine an optical fiber without a cover

s lip.

[Contact: Matt Young, (303) 497-3223 or

-5342]

ELECTRICAL SYSTEMS

Power Systems Metrology

Aschwanden, T., Van Brunt, R.J., and

Bieber, M.E., Analysis of Dielectric

Strength Data for Binary Electronegative Gas Mixtures, Proceedings of the

XVIII International Conference on Phenomena in Ionized Gases, University of

Wales, Swansea, United Kingdom, July

1 2-16, 1987, pp. 1 02-103.

The consistency among dielectric

strength, electron swarm, and collision

cross-section data for ionization,

attachment, and momentum transfer have

been determined for the binary gas mixtures SF 6 /He , SF g/Ne , SF

6 /Ar, -and

SFg/C02 using a theoretical approach

recently developed by Van Brunt. Dielectric strength data for SF^/Ar and

SFg/CC^ measured by Aschwanden can be

accurately described by the model calculation and exhibit a high degree of

consistency with swarm and cross-section

data. The model also appears to suc- cessfully describe preliminary electrical breakdown data for SF fi /Ne mixtures.

The theoretical model fails for SF

&/He

because it does not allow for the important effect of Penning ionization which

is possible in this case.

[Contact: Richard J. Van Brunt, (301)

975-2425]

Fitzpatrick, G.J., Forster, E.O. , Hebner, Jr., R.E., and Kelley, F.F.,

Prebreakdown Cathode Processes in

Liquid Hydrocarbons, IEEE Transactions on Electrical Insulation, Vol.

EI-22, No. 4, pp. 453-458 (August

1987) .

Measurements are presented of the initiation of prebreakdown streamers at a point cathode in liquid hydrocarbons.

Using a computer implementation of the

method of images, the electric field is

computed for selected geometries to

confirm that the field strengths in the

vicinity of these streamers are probably

high enough so that electron multiplication processes can occur. High-magnification photographs of streamer initiation show that the initial streamer

velocity is (2.8 ± 0.4) x 1 0

4 cm/s in

toluene.

[Contact: Robert E. Hebner, Jr., (301)

975-2403]

Hebner, Jr., R.E., Research for Electric Energy Systems - An Annual Report, NBSIR 87-3643 (September

1987) .

This report documents the technical

progress in the five investigations

which make up the project "Support of

Research Projects for Electrical Energy

Systems," funded by the U.S. Department

of Energy. To support the measurement
CEEE Technical Publication Announcements - April 88 Page 1

5

Power Systems Metrology (cont'd.)

of ions in the dc transmission line

environment, techniques to measure ion

mobility were evaluated. In addition,

techniques were developed to determine

the sensitivity of an AM radio to detect

partial discharges in a biological expo- sure facility. Within the project to

develop measurement techniques and obtain basic data for gaseous dielectrics,

a theoretical method was developed to

evaluate the consistency among electron

collision, transport, and dielectric

strength data for binary gas mixtures;

the gas phase hydrolysis rates for SOF

2 and SOF

4 were measured; the corona discharge oxidation mechanisms were identified and the role of negative ions on

the SOF^ yield was determined. Progress

in interfacial measurements included the

optical measurement of the electric

field distribution as a streamer initiates. Progress in developing measure- ments for nanosecond dielectrics was in

the characterization of the errors in

the measurement of voltage pulses using

E-dot probes and the identification of

the reducation of breakdown voltage in

oil for faster pulses.

[Contact: Ronald H. McKnight, (301)

975-2403]

Hebner, Jr., R.E., Kelley, E.F., Fitzpatrick, G.J., and Forster, E.O., Hie

Effect of Pressure on Streamer Inception and Propagation in Liquid Hydrocarbons, Proceedings of the Ninth

International Conference on Conduction

and Breakdown in Dielectric Liquids,

Salford, United Kingdom, July 27-31,

1987, unpaged (July 1987).

This paper shows that for pressures

between 0.1 and 5.0 MPa, the structure

of a streamer originating from a cathode

is significantly modified while that

initiating from an anode is relatively

unchanged, in toluene and hexane. For

cathode streamers, the inception voltage

increased from 40 ± 6 kv at 0.1 MPa to

99 ± 22 kv at 5.0 MPa. For anode

streamers, the inception voltage

increased from 53 ± 6 kv at 0.1 MPa to

1 23 ± 55 kv at 5.0 MPa.

[Contact: Edward F. Kelley, (301)

975-2424]

Hillhouse, D.L., Assessment of Future

Optical Measurements of Voltage and

Current in Electric Power Systems

,

Optical Power Line Voltacre and Current

Measurement Systems; Electric Power

Research Institute Report EPRI EL-5431 , Vol. 2 (September 1 987).

This report summarizes the results of an investigation into the technical and

economic justifications for improving

power system voltage and current mea- surements, with special emphasis on the

prospects for doing this using optical

technology. The investigation consisted

of gathering, analyzing, and summarizing

information obtained specialists in over

a dozen representative major utilities,

and from nearly twenty equipment manu- facturers. From this and other information, an assessment of measurement needs

and of the availability of the requisite

technology was developed.

The report concludes that although the

technical and economic arguments either

for or against optical technology for

power system measurements are inconclusive, there is a widespread consensus

that optical technology will become

incorporated into the power qrid. The

consensus is based on such factors as the“need fdr more accurate metering and

the increasing automation of the power

grid.

[Contact: Ronald H. McKnight, (301)

975-2403]

Oldham, N.M., Laug, O.B., and Waltrip,

B.C., Digitally-Synthesized Power

Calibration Source, IEEE Transactions

on Instrumentation and Measurement,

Vol. IM-36, No. 2, pp. 341-346 (June

1987) [ CP EM 86 Proceedings issue]

.

A digitally synthesized source of "phantom" power for calibrating electrical

power and energy meters is described.

Independent sources of voltage, current,

and phase angle are programmable between
Page 1 CEEE Technical Publication Announcements - April 88

6

Power Systems Metrology (cont'd.)

0 and 240 V, 0 and 5 A, and 0 and 360

deg, respectively. The accuracy of the

active and reactive power is estimated

to be within ±100 ppm of the full scale

apparent power (volt-amperes).

[Contact: N. Michael Oldham, (301)

975-2408]

Petersons, 0., and Mehta, S.P., An

Active High Voltage Divider and Phase

Shifter, IEEE Transactions on

Instrumentation and Measurement, Vol.

IM-36, No. 2, pp. 362-368 (June 1987)

[CP EM 86 Proceedings issue]

.

An instrument combining the functions

of an active high voltage divider and a phase shifter designed to yield small

phase-angle uncertainties within 20

yrad is described. It is based on a circuit employing a feedback amplifier

and a controlled source. The presence

of the controlled source greatly reduces

the potential of dynamic instabilities

of the feedback loop and effectively

eliminates the errors ’ associated with

the finite gain of the amplifier.

Design and construction details and the

results of the accuracy evaluation are presented.

[Contact: Oskars Petersons, (301)

975-2400]

Sieck, L.W., and Van Brunt, R.J.,

Transfer of F~ in Collisions of SF

&~ with Fluorinated Gases and SO at

Thermal Energies, Proceedings or the

Fifteenth International Conference on the Physics of Electronic and Atomic

Collisions, Brighton, United Kingdom,

July 22-28, 1987, p. 710.

Superconductors

Goldfarb, R.B., Clark, A.F., Braqinski,

A.I., and Panson, A.J. , Evidence for

Two Superconducting Components in Oxygen-Annealed Single-Phase Y-Ba-Cu-0,

Cryogenics, Vol. 27, pp. 475-480 (September 1 987) .

The complex susceptibility of a sintered

Y-Ba-Cu-0 superconductor is stronqly

dependent on ac field amplitude, H.

Very small values of H must be used

for the real part of susceptibility, y',

to reach a value corresponding to bulk

diamagnetism just below the critical

temperature, Tc . The imaginary part,

y", represents hysteresis loss in the

sample. Thus, y" versus temperature

becomes positive when H exceeds the

lower critical field, Hc i, of the

superconductor.

Annealing the material in oxvgen gives

rise to two distinct components, a relatively high-Tc

i hiqh-H c i superconductor (denoted as ' G' or 'good' ) and

a relatively low-T c

i , low-H c ]_ superconductor (denoted as 'B' or

'bad' )

.

Curves of susceptibili tv versus increasing temperature reflect the dual

nature of the annealed sample: y' has

an inflection at the Tc of the B com- ponent and approaches zero at the Tc of the G component, while y" has a peak

at each Tc . Both critical temperatures decrease linearly with increasing

H, thouqh at very different rates.

2. of the G component is considerably greater than of the B com- ponent. The lower critical fields are linearly decreasing functions of temperature.

Measured

transfer

with SOF,

temperature dependences of F“

rates for collisions of SF

SiF are reporte

S0

?F^,

6

^ , SO^f SF^, and

The results are used

SOF,

to interpret the complex anionic chemistry that occurs during electrical discharges in SF .

[ Contact:

975-2425]

Richard J. Van Brunt, (301)

Two models might explain the susceptibility data. In the grain model, the G

component consists of superconducting

grains, and the B component is either

intergranular material, unfavourablv

orientated anisotropic grains, or oxygen-depleted grain boundaries. In the

surface model, the G component is in the

interior of the sample, and the R com-
CEEE Technical Publication Announcements - April 88 Page 1

7

Superconductors (cont! d.)

ponent is at the sample' s surface. This

condition could arise if there was oxygen depletion at the surface subseguent

to total enrichment during annealing.

[Contact: Ronald B. Goldfarb, (303)

497-3650]

Goldfarb, R.B., Clark, A.F., Panson,

A.J., and Braginski, A.I., AC Susceptibility Measurements Near the Critical

Temperature of a Y-Ba-Cu-0 Superconductor, Proceedings of Symposium S, 1987

Materials Research Society Meeting,

Anaheim, California, April 23-24,

1987, pp. 261-263.

The loss component of complex susceptibility of a Y-Ba-Cu-0 superconductor

near its critical temperature is strongly dependent on ac field amplitude but

virtually independent of freguency.

This implies that magnetic hysteresis is

the major loss mechanism in these materials. The temperature at which the

loss first becomes positive upon warming

corresponds to an equivalence between

the amplitude of the ac field and the

lower critical field of the superconductor.

[Contact: Ronald B. Goldfarb, (303)

497-3650]

Moreland, J.M., Squeezable Junctions

for Electron Tunneling and Surface

Electric Field Experiment, The Physics Teacher, pp. 405-411 (October

1 986) .

Mechanically adjusted junctions can be

used for electron tunneling or surface

electric field measurements. This article conceptualized their application to

semiconductors, superconductors, and

surface physics of conducting materials.

[Contact: John M. Moreland, (303)

497-3641]

Moreland, J.M., Clark, A.F., Ku , H.C.,

and Shelton, R.N., Electron Tunneling

Measurement of the Energy Gap in a La-Sr-Cu-0 Superconductor, Cryogenics, Vol. 27, pp. 227-228 (May 1987).

We have used the break-junction technique to determine the energy gap of

lanthanum-strontium-copper-oxide, one of

the new high-critical-temperature superconductors. The current-voltage characteristics demonstrated a variety of

tunneling behaviours. The best characteristic indicating quasiparticle tunneling between superconducting electrodes implied an energy gap of 7.0 ± 0.1 mev. Derivatives of other characteristics showed weak structure indicating possible energy gaps up to 9 mev. [Contact: John M. Moreland, (303)

497-3641]

Moreland, J.M., Fkin, J.W., Goodrich,

L.F., Capobianco, T.E., Clark, A.F.,

Kwo, J. , Hong, M., and Liou, S.H.,

Break-Junction Tunneling Measurements

of the High-Tc Superconductor

Y

1 Ba2Cu3 0g _5, Physical Review B,

Vol. 35, No. 16, pp. 8856-8857 (June 1,

1987) .

Current-voltage tunneling characteristics in a high-critical- temperature

superconducting material containing

predominately Y , Ba „Cu ^0 g have been

measured using the break-junction technique. Sharp gap structure was

observed, with the largest superconductive energy gap measured to be A = 19.5

± 1 meV, assuming a superconductorinsulator-superconductor junction. This

energy gap corresponds to 2A/kgTc

= 4.8 at T = 4 K, for a critical temperature of 93 K (midpoint of the resistive

transition) . [Contact: John M. Moreland, (303)

497-3641]

Moreland, J.M., Clark, A.F., Goodrich,

L.F., Ku , H.C., and Shelton, R.N.,

Tunneling Spectroscopy of a La-Sr-Cu-0

Break Junction: Evidence for StrongCoupling Superconductivity, Physical

Review B, Vol. 35, No. 16, pp. 8711 — 871 3 (June 1 ,

1 987) .

Detailed structure in the guasiparticle

tunneling has been observed in

La-Sr-Cu-0 superconductive tunneling

junctions using the break-junction tech-
Page 1

8

CEEE Technical Publication Announcements - April 88

Superconductors (cont'd.

)

nique. Variability in the energy gap

and associated structure in the currentvoltage curves are observed indicating

significant inhomogeneity in the superconducting properties. Large energy

gaps (7.0 meV) and deep structure in the

conductance derivative are evidence for

a s trong- coupling mechanism.

[Contact: John M. Moreland, (303)

497-3641]

Moreland, J.M., Goodrich, L.F., Ekin,

J.W., Capobianco, T.E., and Clark,

A . F . , Electron Tunneling Measurements

of High Tc Compounds Using Break

Junctions, Japanese Journal of Applied Physics, Vol. 26, Supplement, No.

26-3, pp. 999-1000 (August 1987).

[Proceedings of the 18th International

Conference on Low Temperature Physics,

Kyoto, Japan, August 10-16, 1987.]

We report on the break junction technique and its application to the high

Tc superconductors LaSrCuO and YBaCuO.

In this technique, bulk samples are fractured and the freshly fractured

surfaces adjusted to form a tunneling

junction with vacuum or liquid helium as the insulating barrier. Precise mechanical adjustment permits the study of

electron tunneling phenomena between

pieces of a bulk superconductor. The

current-voltage characteristics of these

break junctions are variable, indicating

sample inhomogeneity. However, some junction settings result in the more familiar quasi-particle signatures in

the current-voltage characteristics.

Low-leakage junctions indicate the

presence of a sharp superconductive

energy gap as well as large variations

in junction conductance above the gap

edge in both materials.

[Contact: John M. Moreland, (303)

497-3641]

Moreland, J.M., Goodrich, L.F., Ekin,

J.W. , Capobianco, T.E., Clark, A.F.,

Braginski, A. I., and Panson, A.J. , Josephson Effect Above 77 K in a YBaCuO

Break Junction, Applied Physics Letters, Vol. 51, No. 7, pp. 540=541

(August 17, 1 987) .

We have observed the Josephson effect in

a YBaCuO break junction. Critical cur- rents as high as 10mA were measured at

4 K for break junctions with a point

contact within the fracture of a sample.

The junction was susceptible to microwave radiation showing Shapiro steps

with the ratio of V/f of 2.04 ± 0.0 5 pV/GHz compared to the pair tunnelino

value of h/2e = 2.068 yV/GHz. These

steps were clearly visible in the

current-voltage characteristics at

temperatures up to 85 K.

[Contact: John M. Moreland, (303)

497-3641]

Magnetic Materials & Measurements

Capobianco, T.E. , A Review of Eddy

Current Research at the National Bureau

of Standards in Boulder, Colorado,

Proceedings of the DoD Conference on Nondestructive Evaluation, Charleston,

South Carolina, October 29-31 , 1985,

pp. 164-173 (August 1987).

On-going research in eddy current nondestructive evaluation at the National

Bureau of Standards in Boulder, Colorado, is reviewed. The most recent

results and publications of experimental

and theoretical studies are presented.

This includes the areas of eddy current

coil characteriza tion and field mappincr,

experimental verification of eddy

current-fatigue crack interaction, uniform field probe calibration, artifact

standards, fatigue crack growth monitoring, and differential eddy current probe

studies.

[Contact: Thomas E. Capobianco, (303)

497-3141]

Capobianco, T.E. , and Fickett, F,R», A

Proposed Military Standard for Commercial Eddy Current Probes Based on Performance Characterization, Proceedings of the 35th Defense Conference on Nondestructive Testing, Fill Air Force

Base, Utah, October 28-30, 1986, pp.

135-141 (October 1986).
CEEE Technical Publication Announcements - April 88 Page 1

9

Magnetic Materials, etc, (cont'd.)

The latest results of the work being

done on a draft military standard for

characterizing commercial eddy current

probes are reported. We discuss mea- surement techniques that have been evaluated for suitability as a characterization test method, such as field mapping

and various electrical parameter mea- surements, and the reasons for selecting

the method which has been incorporated

in the present draft. Our conclusion is

that the measurement of impedance change

of a probe over a range of frequencies

on two metals of different conductivities offers the best indicator of eddy

current probe sensitivity and proper

operating range.

[Contact: Thomas E. Capobianco, (303)

497-3141]

ELECTROMAGNETIC INTERFERENCE

Radiated Electromagnetic Interference

Camell, D.G. , Larson, E.B., and Cruz,

J . E . , NBS Calibration Procedures for

Horizontal Dipole Antennas (25 to 1000

MHz), NBS Technical Note 1 309 (April

1 987) .

This publication describes the theoretical basis and test procedures for horizontally polarized dipole calibrations

at the National Bureau of Standards.

Two 'different techniques and two

different test sites are used. The

standard antenna method uses the

calculation of a field strength level,

from the response of a simple half-wave

dipole, to calibrate an antenna. This

method is used at an open field site in

the frequency range of 200 MHz to 1000

MHz. Procedures for both techniques are explained and measurement setups are illustrated. Measurement uncertainties

are discussed. Sample reports are included for both methods.

[Contact: Dennis G. Camell, (303)

497-3214]

FitzGerrell, R.G., Standard Linear

Antennas, 30 MHz to 1000 MHz, IEEE

Transactions on Antennas and Propagation, Vol. AP- 34, No. 12, pp. 1 425-1 429

(December 1986). [Proceedings of the

Conference on Electromagnetic Compatibility, University of York, United

Kingdom, September 28-October 2, 1986,

pp. 1 47-1 53] .

It is demonstrated that the insertion

loss between pairs of thin, linear

antennas may be calculated using fairly

simple eguations that are Generally

considered to be oood engineering

approximations. Although the insertion

loss calculation does not involve antenna gain directly (some measurements are actually made in the near-field where

gain is not defined) , the result is

precisely the guantity obtained usincr

the antenna gains in Friis's transmission formula, assuming the mismatch

loses are zero. Therefore, the antenna

gain product is implicit in the more general insertion loss eguations. The

particular measurement of insertion loss

used here yields a guantity called site

attenuation by electromacrne tic compatibility engineers. A close aoreement

between measured and calculated data

provides confidence in the site attenuation calculations when the site is

essentially perfect, and provides con- fidence in the gain product of the

antenna pair calculated using basicallv

the same equations as those used for

insertion loss. It is assumed that

one-half of the mean value of the difference between the calculated and mea- sured data is a good estimate of individual antenna performance. For the

antennas described here, this measure of

performance is typically <0.05 dB and on

the outside, <0.42 dB

.

[Contact: Richard G. FitzGerrell, (303)

497-3737]

Hill, D.A., Effect of a Thin Conducting Sheet on the Fields of a Buried

Magnetic Dipole, Electromagnetics,

Volume 7, pp. 71-79 (1987).

The effect of a thin conducting sheet on the fields of a subsurface vertical

magnetic dipole has been analyzed. The
Page 20

Radiated EMI (cont1 d.)

CEEE Technical Publication Announcements - April 88

integral representation of the fields

has been evaluated numerically, and

numerical results for the vertical magnetic field above the source at the

surface are presented in parametric

form e It is found that the predicted

fields give better agreement with previous transmission measurements than do

the fields of a homogeneous half-space

model.

[Contact: David A. Hill, (303)

497-3472]

Conducted Electromagnetic Interference

Bell, B.A., A Report on the NBS/CEEE

Survey of Electronic Measurement Needs

Below 10 MHz, Proceedings of the

National Conference of Standards Laboratories, 1987 Workshop and Symposium,

Denver, Colorado, July 1 2-16, 1987, pp.

75-1 - 75-14.

This paper describes the results of a recent survey conducted by the Electrosystems Division of the Center for Electronics and Electrical Engineering

(CEEE) at the National Bureau of Standards (NBS ) . A summary analysis is

provided of the data obtained on questions concerning (1) critical electrical

quantities and associated instrumentation and devices, (2) automatic test

equipment (ATE) /complex measurement

systems, and (3) conducted electromagnetic interference.

[Contact: Barry A. Bell, (301)

975-2402]

Martzloff, F.D., and Wilson, P.F.,

Fast Transient Tests - Trivial or Terminal Pursuit?, Proceedings of the

Electromagnetic Compatibility 1987,

Zurich, Switzerland, March 3-5, 1987,

pp. 283-288 (March 1987).

Measurements, augmented by theoretical

simulation techniques, have been performed to determine the attenuation of

fast transients propagating in typical

indoor (conduit-enclosed) power lines.

The rise time of the applied pulses

ranges from 0.7 to 50 ns, including the

International Electrotechnical Commission ( I EC ) 5/50 ns pulse recently recom- mended for fast transient tests. Theory and measurements confirm that pulse

amplitude attenuation increases significantly for shorter pulses. For comparison and validation of the theoretical

model, the IEC pulse was also applied to

a conventional coaxial cable.

[Contact: Francois D. Martzloff, (301)

975-2409]

ADDITIONAL INFORMATION

Lists of Publications

Gibson, K.A., Page, J.M., and Miller,

C .K . S . , A Bibliography of the NBS

Electromagnetic Fields Division Publications, NBS IR 85-3040 (February

1986) .

This bibliography lists publications of

the National Bureau of Standards' Fleetromagnetic Fields Division for the

period from January 1984 throuoh September 1985, with selected earlier publications from the Division's predecessor

organizations.

[Contact: Kathryn A. Gibson, (303)

497-31 32]

Kline, K.E., and DeWeese, M.E., Metrology for Electromagnetic Technology:

A Bibliography of NBS Publications,

NBSIR 87-3074 (June 1987).

This biblioaraphy lists the publications

of the personnel of the Electromagnetic

Technology Division of NBS in the period

from January 1970 through December 1986.

A few earlier references that are directly related to the present work of

the Division are included.

[Contact: Kathryn E. Kline, (303)

497-3678]

Palla, J.C., and Meiselman, B., Electrical and Electronic Metrology: A

Bibliography of NBS Electrosystems

Division Publications, NBS List of

Publications 94 (January 1988).
CEEE Technical Publication Announcements - April 88 Page 21

List of Publications (cont'd.)

This bibliography covers publications of

the Electrosystems Division, Center for

Electronics and Electrical Engineering,

NBS, and of its predecessor sections for

the period January 1963 to January 1988.

A brief description of the Division's

technical program is given in the introduction.

[Contact: Jenny C. Palla, (301)

975-2220]

Walters, E.J. , Semiconductor Measurement Technology, NBS List of Publications 72, [a bibliography of NBS

publications for the years 1962-1987]

( March 1 988) .

This bibliography contains reports of

work performed at the National Bureau of

Standards in the field of Semiconductor

Measurement Technology in the period

from 1962 through December 1987. An

index by topic area and a list of

authors are provided.

[Contact: E. Jane Walters, (301)

975-2050]

1988 CEEE Calendar

May 11-13 (Los Angeles, CA)

Intersociety Conference on Thermal

Phenomena in Fabrication and Operation

of Electronic Components. This Conference is sponsored by the Components,

Hybrids, and Manufacturing Technology

Society of the IEEE, in cooperation with

ASME Committee K-16 on Heat Transfer and

NBS. It is intended to provide an interdisciplinary forum for exploring

the progress made in understanding,

analyzing, and modeling thermal transport processes and thermally induced

failures in the fabrication, assembly,

and use of logic, memory, and datastorage systems. Major topic areas covered are 1) processing and fabrication, including state-of-the-a rt semiconductor crystal growing techniques;

thermal stress in wafers, chips, substrates, PC boards, and joints; and

encapsulant behavior with respect to

solidification, outgassing, mechanical

properties, and water vapor diffusion

and absorption; 2) packaaing technology,

including means for cooling components

from cryogenic to high temperatures and

reliability as affected by failure

mechanisms such as dopant migration and

intermetallic growth; and 3) peripheral

equipment, including data storage in

both magnetic and optical media and

thermal issues in dot-matrix and thermal

printer heads. The conference is being

held in conjunction with the Electronics

Components Conference (May 9-11) at the

same site. [Contact: Frank F. Oettinger, (301) 975-2054]

September 12-14 (San Jose, CA)

VLSI and GaAs Chip Packaging Workshop.

This Workshop is co-sponsored by the

Components, Hybrids, and Manufacturing

Technology .Society of IFFF and NBS;

attendees are expected to be knowledgeable in the field and to participate in

discussions. Topic areas include: VLSI

and wafer-scale package design (characterization and implementation, cost and

performance-driven solutions); package

thermal design (characteristics, re- sults, and issues) ; package interconnection options (wire bonding, TAP, flip

chip, or optical) ; GaAs IC packaging

(high-speed packaging considerations);

package electrical issues (reduction of

parasitics, improvements in electrical

performance, reduction in line resistance) ; integrating package design (from

die to system, including assembly and

test issues); VLSI package materials

advancements; die-attach solutions for

large chips; and new failure mechanisms

in VLSI packaging. [Contact: George G.

Harman, (301) 975-2097]

Planned

Early summer (Vail, CO)

Combined Short Course on Optical Fiber

and Laser Measurements. [Contact:

Aaron A. Sanders, (303) 497-5341]
Page 22

1988 CEEE Calendar (cont'd.)

CEEE Technical Publication Announcements - April 88

Early fall (Boulder, CO)

Fiber Optics Symposium. [Contact:

Aaron A. Sanders, (303) 497-5341]

Late fall (Boulder, CO)

Symposium on Optical Materials for High

Power Lasers (20th Boulder Damage

Symposium). [Contact: Aaron A.

Sanders, (303) 497-5341]

CEEE SPONSORS

National Bureau of Standards

Department of Defense

Defense Nuclear Agency; Defense

Advanced Research Projects

Agency; National Security

Agency; Combined Army/Na vy/Air

Force Calibration Coordination

Group

U.S. Air Force

Newark Air Force Station; Rome

Air Development; Space & Missile

Organization; Hanscom Air Force

Base; U.S. Air Force

Headquarters; Wright-Pa tterson

Air Force Base

U.S. Army

Aviation System Command; Fort

Belvoir; Fort Monmouth; Harry

Diamond Laboratory; Materials & Mechanics Research Center;

Redstone Arsenal; Strategic

Defense Command; AVRADCOM

i (Aviation)

U.S. Navy

Naval Surface Weapons Center;

Naval Ocean Systems Center; Naval

Ordnance Systems Command; Naval

Air Test Center; Ordnance

Disposal Technology Center;

Weapons Support Center/Crane;

Office of Naval Research; Naval

Air Engineerincr Center; Naval Sea

Systems Command; Naval Weapons

Station; Naval Postaraduate School;

Naval Metrology Fngineerino Center

Department of Enercry

Energy Systems Research; Fusion

Energy; High Energy & Nuclear

Physics; Bonneville Power

Administration

Department of Justice

Law Enforcement Assistance

Administration

Nuclear Regulatory Agency

Department of Treasury

Bureau of Fngraving and Printing

Department of Transportation

National Highway Traffic safety

Administration

Health and Human Services

Food and Drug Administration

The Charles Stark Draper Laboratory

International Copper Research

Association

Massachusetts Institute of Technology

Sandia National Laboratories

University of California

Los Alamos Scientific Laboratory

University of Wyoming

Building Industry Consulting Services
U.S. DEPT. OP COMM, I„ PUBLICATION OR 2. Performing Organ. Report No. 1. Publication Date BIBLIOGRAPHIC DATA

REPORT NO.

April 1988 SHEET (See instruet/ofis) NBSXR 88-3748

4. TITLE AND SUBTITLE

Center for Electronics and Electrical Engineering Technical Publication Announcements

Covering Center Programs, July to September 1987, with 1988 CEEE Events Calendar

5. AUTHOR(S)

E. Jane Walters, compiler

6. PERFORMING ORGANIZATION (If joint or other than N BS. see instructions)

NATIONAL BUREAU OF STANDARDS

U.S. DEPARTMENT OF COMMERCE

GAITHERSBURG, MD 20899

7. Contract/Grant No.

8. Type of Report & Period Covered

9. SPONSORING ORGANIZATION NAME AND COMPLETE ADDRESS (Street. City. State , ZIP)

U.S. Department of Commerce

National Bureau of Standards

National Engineering Laboratory

Center for Electronics and Electrical Engineering

10.

SUPPLEMENTARY NOTES

All technical information included in this document has been previously approved for

publication.

| | Document describes a computer program; SF-185, FIPS Software Summary, is attached.

11.

ABSTRACT (A 200-word or less factual summary of most significant in formation. If document includes a si gn i fi cant

bibliography or literature survey, mention it here) This is the fourteenth issue of a quarterly publication providing information on the

technical work of the National Bureau of Standards Center for Electronics and

Electrical Engineering. This issue of the Center for Electronics and Electrical

Engineering Technical Publication Announcements covers the third quarter of

calendar year 1987. Abstracts are provided by technical area for papers published

this quarter.

12.

KEY WORDS (Six to twelve entries; alphabetical order; capitalize only proper names; and separate key words by semicolon s) antennas; electrical engineering; electrical power; electromagnetic interference;

electronics; instrumentation; laser; magnetics; microwave; optical fibers; semiconductors; superconductors

13. availability

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KEY CO NTACTS:

Center Headquarters (720) Director, Mr. Judton C. French (301) 975-2220

Deputy Director, Mr. Robert I. Scace (301) 975-2220

Electrosystems Division (722) Chief, Dr. Oekare Petersons (301) 975-2400

Electromagnetic Fields Division (723) Chief* Dr. Ramon C. Baird (303) 497-3131

Electromagnetic Technology Division (724) Chief, Dr Robert A. Kemper (303) 497-3535

Semiconductor Electronics Division (727) Chief, Mr. Frank F. Oettlnger (301) 975-2054

INFORMATION:

For additional Information on the Center for Electronlce and Electrical Engineering, write or call:

Center for Electronics and Electrical Engineering

National Bureau of Standarde

Metrology Building, Room B-358

Gaithersburg, MD 20899

Telephone (301) 975-2220